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Sample records for stacked metallic layers

  1. Complex and noncentrosymmetric stacking of layered metal dichalcogenide materials created by screw dislocations

    DOE PAGES

    Shearer, Melinda J.; Samad, Leith; Zhang, Yi; ...

    2017-02-08

    The interesting and tunable properties of layered metal dichalcogenides heavily depend on their phase and layer stacking. Here, we show and explain how the layer stacking and physical properties of WSe2 are influenced by screw dislocations. A one-to-one correlation of atomic force microscopy and high- and low-frequency Raman spectroscopy of many dislocated WSe2 nanoplates reveals variations in the number and shapes of dislocation spirals and different layer stackings that are determined by the number, rotation, and location of the dislocations. Plates with triangular dislocation spirals form noncentrosymmetric stacking that gives rise to strong second-harmonic generation and enhanced photoluminescence, plates withmore » hexagonal dislocation spirals form the bulk 2H layer stacking commonly observed, and plates containing mixed dislocation shapes have intermediate noncentrosymmetric stackings with mixed properties. Multiple dislocation cores and other complexities can lead to more complex stackings and properties. Finally, these previously unobserved properties and layer stackings in WSe2 will be interesting for spintronics and valleytronics.« less

  2. Complex and Noncentrosymmetric Stacking of Layered Metal Dichalcogenide Materials Created by Screw Dislocations.

    PubMed

    Shearer, Melinda J; Samad, Leith; Zhang, Yi; Zhao, Yuzhou; Puretzky, Alexander; Eliceiri, Kevin W; Wright, John C; Hamers, Robert J; Jin, Song

    2017-03-08

    The interesting and tunable properties of layered metal dichalcogenides heavily depend on their phase and layer stacking. Here, we show and explain how the layer stacking and physical properties of WSe2 are influenced by screw dislocations. A one-to-one correlation of atomic force microscopy and high- and low-frequency Raman spectroscopy of many dislocated WSe2 nanoplates reveals variations in the number and shapes of dislocation spirals and different layer stackings that are determined by the number, rotation, and location of the dislocations. Plates with triangular dislocation spirals form noncentrosymmetric stacking that gives rise to strong second-harmonic generation and enhanced photoluminescence, plates with hexagonal dislocation spirals form the bulk 2H layer stacking commonly observed, and plates containing mixed dislocation shapes have intermediate noncentrosymmetric stackings with mixed properties. Multiple dislocation cores and other complexities can lead to more complex stackings and properties. These previously unobserved properties and layer stackings in WSe2 will be interesting for spintronics and valleytronics.

  3. Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks

    SciTech Connect

    Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G.

    2007-03-15

    The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

  4. White light emission from GaN stack layers doped by different rare-earth metals

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Liu, Chang

    2015-02-01

    Experimental progress of electroluminescence devices (ELDs) employing GaN doped with rare-earth metals had been significantly made targeting RGB displays. However, reports on the theoretical models to design the devices and the applications were limited. Our previous paper proposed a device model using the quantum collision theory and Judd-Ofelt approximation to design the ELDs for white light illumination. In the present study, the model is modified by considering the light extraction efficiency and optical loss during propagating in the films. To improve the luminous efficiency, an ELD with three stack layers of GaN:Tm/GaN:Er/GaN:Eu is proposed and designed. The model predicts that the color of the integrated light can be controlled by applied voltage, thickness of each doping layer and doping concentrations of the rare earth metals. The luminous efficacy of white light emission at a bias of -100 V is calculated to be 274 lm/W, which is much higher than that of fluorescent lumps. The proposed ELD will open a door to efficient solid-state lighting.

  5. Low-frequency Raman modes as fingerprints of layer stacking configurations of transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Liang, Liangbo; Puretzky, Alexander; Sumpter, Bobby; Meunier, Vincent; Geohegan, David; David B. Geohegan Team; Vincent Meunier Team

    The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) can be used to determine the exact atomic registration between different layers in few-layer 2D stacks; however, fast and relatively inexpensive optical characterization techniques are essential for rapid development of the field. Using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low-frequency (LF) Raman modes (<50 cm-1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations [Puretzky and Liang et al, ACS Nano 2015, 9, 6333]. First-principles Raman calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries. Our combined experimental/theoretical work demonstrates the LF Raman modes potentially more effective than HF Raman modes to probe the layer stacking and interlayer interaction for 2D materials. The authors acknowledge support from Eugene P. Wigner Fellowship at the Oak Ridge National Laboratory and the Center for Nanophase Materials Sciences, a DOE Office of Science User Facility.

  6. Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations.

    PubMed

    Puretzky, Alexander A; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G; Meunier, Vincent; Geohegan, David B

    2015-06-23

    The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (<50 cm(-1)) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.

  7. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations

    SciTech Connect

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; Xiao, Kai; Wang, Kai; Mahjouri-Samani, Masoud; Basile, Leonardo; Idrobo, Juan Carlos; Sumpter, Bobby G.; Meunier, Vincent; Geohegan, David B.

    2015-05-12

    In this study, stacked monolayers of two-dimensional (2D) materials present a new class of hybrid materials with tunable optoelectronic properties determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks, however fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition we show that the generally unexplored low frequency (LF) Raman modes (< 50 cm-1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.

  8. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations

    DOE PAGES

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; ...

    2015-05-12

    In this study, stacked monolayers of two-dimensional (2D) materials present a new class of hybrid materials with tunable optoelectronic properties determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks, however fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition we show that the generally unexplored low frequency (LF) Raman modes (< 50 cm-1) thatmore » originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.« less

  9. Preparation of Cu2ZnSnSe4 thin films by selenization of stacked metallic layers

    NASA Astrophysics Data System (ADS)

    Huang, Hou-Ying; Liu, Shang-En

    2013-12-01

    A Cu2ZnSnSe4 (CZTSe) thin film fabricated by selenization of stacked pure metal precursors through e-beam evaporation on Mo-coated soda lime glass substrates worked as thin film solar cell absorber. The selenization was carried out under element Se vapor circumstance at 570 °C for 20 min. The absorber went through chemical bath CdS deposition, sputtered ZnO, ITO and Al electrodes to become a solar cell. Unlike previous works, only simple three-layer metal precursors without any compound were used as evaporation sources. The synthesized CZTSe absorber layer phase was identified by X-ray diffraction. The solar cells were measured by AAA class solar simulator. The absorber layer thickness was measured by scanning electron microscope (SEM). Energy dispersive spectrometer (EDS) was also used for checking metal ratios in the absorber layer. The best efficiency was 4.2%. In this work, we found that there were voids in absorber film bottom. The Cu-top precursors will lead to larger grains, flatter surfaces and larger voids than Sn-top precursors. The Cu-top precursor may also contribute to better selenization which may help prevent Zn loss but cause Sn loss. Finally, this work also showed Cu-poor and Zn-rich will improve conversion efficiency.

  10. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    NASA Astrophysics Data System (ADS)

    Khalil, M. I.; Atici, O.; Lucotti, A.; Binetti, S.; Le Donne, A.; Magagnin, L.

    2016-08-01

    In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures.

  11. Arrays of stacked metal coordination compounds

    DOEpatents

    Bulkowski, J.E.

    1986-10-21

    A process is disclosed for preparing novel arrays of metal coordination compounds characterized by arrangement of the metal ions, separated by a linking agent, in stacked order one above the other. The process permits great flexibility in the design of the array. For example, layers of different composition can be added to the array at will. 3 figs.

  12. Arrays of stacked metal coordination compounds

    DOEpatents

    Bulkowski, John E.

    1986-01-01

    A process is disclosed for preparing novel arrays of metal coordination compounds characterized by arrangement of the metal ions, separated by a linking agent, in stacked order one above the other. The process permits great flexibility in the design of the array. For example, layers of different composition can be added to the array at will.

  13. Effect of metal layer stacking order on the growth of Cu2ZnSnS4thin films

    NASA Astrophysics Data System (ADS)

    Thota, Narayana; Gurubhaskar, M.; Sunil, M. Anantha; Prathap, P.; Subbaiah, Y. P. Venkata; Tiwari, Ashutosh

    2017-02-01

    In this paper we have presented an in-depth study of effect of metallic precursor stacking order on the growth of the Cu2ZnSnS4 (CZTS) thin films. The CZTS films were prepared by employing a two-step process comprising of sequential sputtering of the metal precursors followed by sulfurization. An optimized stacking sequence as well as growth mechanism for obtaining the single phase CZTS has been proposed based on the results of XRD, Raman, XPS, UV-Vis and electrical studies. A combination of Raman analysis and XPS has been carried out to confirm the CZTS phase formation and to detect any minor phases, if present. The occurrence of Raman modes at around 286 and 336 cm-1 for the Zn/Cu/Sn/Cu stack sulfurized at 500 °C indicated the existence of prominent Kesterite CZTS phase. The perfect homogeneous mixing of sequential precursors together with the elemental sulfur was observed in the case of sulfurized stack order of Zn/Cu/Sn/Cu, which yielded single phase CZTS films, and further confirmed by high resolution core level XPS measurements. Stack dependent micro structural features and elemental analysis were also carried out using FESEM attached to EDS. The p-type charge carriers as detected using hot-probe measurement technique and the band-gap energy of ∼1.52 eV as estimated from the absorbance spectrum, suggested that the Zn/Cu/Sn/Cu stack order is most appropriate for realizing single phase CZTS growth using two step method.

  14. 23. Brick coke quencher, brick stack, metal stack to right, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. Brick coke quencher, brick stack, metal stack to right, coke gas pipe to left; in background, BOF building, limestone piles, Levy's Slag Dump. Looking north/northwest - Rouge Steel Company, 3001 Miller Road, Dearborn, MI

  15. UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

    2016-08-01

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent

  16. UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M.

    2016-08-28

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

  17. Six-band terahertz metamaterial absorber based on the combination of multiple-order responses of metallic patches in a dual-layer stacked resonance structure

    NASA Astrophysics Data System (ADS)

    Wang, Ben-Xin; Wang, Gui-Zhen; Sang, Tian; Wang, Ling-Ling

    2017-01-01

    This paper reports on a numerical study of the six-band metamaterial absorber composed of two alternating stack of metallic-dielectric layers on top of a continuous metallic plane. Six obvious resonance peaks with high absorption performance (average larger than 99.37%) are realized. The first, third, fifth, and the second, fourth, sixth resonance absorption bands are attributed to the multiple-order responses (i.e., the 1-, 3- and 5-order responses) of the bottom- and top-layer of the structure, respectively, and thus the absorption mechanism of six-band absorber is due to the combination of two sets of the multiple-order resonances of these two layers. Besides, the size changes of the metallic layers have the ability to tune the frequencies of the six-band absorber. Employing the results, we also present a six-band polarization tunable absorber through varying the sizes of the structure in two orthogonal polarization directions. Moreover, nine-band terahertz absorber can be achieved by using a three-layer stacked structure. Simulation results indicate that the absorber possesses nine distinct resonance bands, and average absorptivities of them are larger than 94.03%. The six-band or nine-band absorbers obtained here have potential applications in many optoelectronic and engineering technology areas.

  18. Six-band terahertz metamaterial absorber based on the combination of multiple-order responses of metallic patches in a dual-layer stacked resonance structure

    PubMed Central

    Wang, Ben-Xin; Wang, Gui-Zhen; Sang, Tian; Wang, Ling-Ling

    2017-01-01

    This paper reports on a numerical study of the six-band metamaterial absorber composed of two alternating stack of metallic-dielectric layers on top of a continuous metallic plane. Six obvious resonance peaks with high absorption performance (average larger than 99.37%) are realized. The first, third, fifth, and the second, fourth, sixth resonance absorption bands are attributed to the multiple-order responses (i.e., the 1-, 3- and 5-order responses) of the bottom- and top-layer of the structure, respectively, and thus the absorption mechanism of six-band absorber is due to the combination of two sets of the multiple-order resonances of these two layers. Besides, the size changes of the metallic layers have the ability to tune the frequencies of the six-band absorber. Employing the results, we also present a six-band polarization tunable absorber through varying the sizes of the structure in two orthogonal polarization directions. Moreover, nine-band terahertz absorber can be achieved by using a three-layer stacked structure. Simulation results indicate that the absorber possesses nine distinct resonance bands, and average absorptivities of them are larger than 94.03%. The six-band or nine-band absorbers obtained here have potential applications in many optoelectronic and engineering technology areas. PMID:28120897

  19. Thermal Exfoliation of Layered Metal-Organic Frameworks into Ultrahydrophilic Graphene Stacks and Their Applications in Li-S Batteries.

    PubMed

    Hao, Guang-Ping; Tang, Cheng; Zhang, En; Zhai, Peiyan; Yin, Jun; Zhu, Wancheng; Zhang, Qiang; Kaskel, Stefan

    2017-08-07

    2D nanocarbon-based materials with controllable pore structures and hydrophilic surface show great potential in electrochemical energy storage systems including lithium sulfur (Li-S) batteries. This paper reports a thermal exfoliation of metal-organic framework crystals with intrinsic 2D structure into multilayer graphene stacks. This family of nanocarbon stacks is composed of well-preserved 2D sheets with highly accessible interlayer macropores, narrowly distributed 7 Å micropores, and ever most polar pore walls. The surface polarity is quantified both by its ultrahigh water vapor uptake of 14.3 mmol g(-1) at low relative pressure of P/P 0 = 0.4 and ultrafast water wetting capability in less than 10.0 s. Based on the structural merits, this series hydrophilic multilayer graphene stack is showcased as suitable model cathode host for unveiling the challenging surface chemistry issue in Li-S batteries. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Wall energy and wall thickness of exchange-coupled rare-earth transition-metal triple layer stacks

    SciTech Connect

    Raasch, D.; Mathieu, C.

    1997-08-01

    The room-temperature wall energy {sigma}{sub w}=4.0{times}10{sup {minus}3}J/m{sup 2} of an exchange-coupled Tb{sub 19.6}Fe{sub 74.7}Co{sub 5.7}/Dy{sub 28.5}Fe{sub 43.2}Co{sub 28.3} double layer stack can be reduced by introducing a soft magnetic intermediate layer in between both layers exhibiting a significantly smaller anisotropy compared to Tb{endash}FeCo and Dy{endash}FeCo. {sigma}{sub w} will decrease linearly with increasing intermediate layer thickness, d{sub IL}, until the wall is completely located within the intermediate layer for d{sub IL}{ge}d{sub w}, where d{sub w} denotes the wall thickness. Thus, d{sub w} can be obtained from the plot {sigma}{sub w} versus d{sub IL}. We determined {sigma}{sub w} and d{sub w} on Gd{endash}FeCo intermediate layers with different anisotropy behavior (perpendicular and in-plane easy axis) and compared the results with data obtained from Brillouin light-scattering measurements, where exchange stiffness, A, and uniaxial anisotropy, K{sub u}, could be determined. With the knowledge of A and K{sub u}, wall energy and thickness were calculated and showed an excellent agreement with the magnetic measurements. A ten times smaller perpendicular anisotropy of Gd{sub 28.1}Fe{sub 71.9} in comparison to Tb{endash}FeCo and Dy{endash}FeCo resulted in a much smaller {sigma}{sub w}=1.1{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=24nm at 300 K. A Gd{sub 34.1}Fe{sub 61.4}Co{sub 4.5} with in-plane anisotropy at room temperature showed a further reduced {sigma}{sub w}=0.3{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=17nm. The smaller wall energy was a result of a different wall structure compared to perpendicular layers. {copyright} {ital 1997 American Institute of Physics.}

  1. Designer Infrared Filters using Stacked Metal Lattices

    NASA Technical Reports Server (NTRS)

    Smith, Howard A.; Rebbert, M.; Sternberg, O.

    2003-01-01

    We have designed and fabricated infrared filters for use at wavelengths greater than or equal to 15 microns. Unlike conventional dielectric filters used at the short wavelengths, ours are made from stacked metal grids, spaced at a very small fraction of the performance wavelengths. The individual lattice layers are gold, the spacers are polyimide, and they are assembled using integrated circuit processing techniques; they resemble some metallic photonic band-gap structures. We simulate the filter performance accurately, including the coupling of the propagating, near-field electromagnetic modes, using computer aided design codes. We find no anomalous absorption. The geometrical parameters of the grids are easily altered in practice, allowing for the production of tuned filters with predictable useful transmission characteristics. Although developed for astronomical instrumentation, the filters arc broadly applicable in systems across infrared and terahertz bands.

  2. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

    PubMed

    Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2016-02-23

    We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.

  3. Properties of Ag layered in Te/Cd stack prepared by stacked elemental layer method

    NASA Astrophysics Data System (ADS)

    Subramani, Shanmugan; Devarajan, Mutharasu; Ibrahim, Kamarulazizi

    2012-06-01

    Ag layered Te/Cd stack thin films (<1 µm thick) were prepared by the Stacked Elemental Layer (SEL) method. The XRD results revealed that the synthesized films had a polycrystalline nature. The synthesized films were preferentially oriented with (111) directions with a cubic phase. Structural studies were evidenced the formation of Ag related alloys at high annealing temperatures as a result of thermal diffusion in elemental stack. Optical and photo-resistivity studies revealed the influence of Ag on the CdTe lattice at high annealing temperatures. Surface morphology and the influence of Ag atoms on surface roughness are also presented.

  4. Quasi-dielectric characteristics of stacked metallic metamaterials

    NASA Astrophysics Data System (ADS)

    Tokuda, Yasunori; Takano, Keisuke; Yamaguchi, Yuki; Sakaguchi, Koichiro; Nakajima, Makoto

    2017-03-01

    We investigated the optical transmission properties of quasi-dielectric metamaterials composed of a stack of metallic sub-wavelength slit-array slabs. First, we used simulations to predict the transmission properties, and showed that these characteristics are basically equivalent to those of triple-layered dielectrics below the diffraction-limit frequency. Next, for the experimental demonstrations, we fabricated the metallic slit arrays, and then measured the transmission spectra. By comparison of the theoretical and experimental results, we demonstrated that each slit array acts as an individual quasi-dielectric in the stacked system. Using these metamaterials, a variety of transmission characteristics can be obtained in the terahertz region.

  5. Designer Infrared Filters Using Stacked Metal Lattices

    NASA Astrophysics Data System (ADS)

    Smith, Howard A.; Sternberg, Oren; Stewart, Ken; Fischer, Jackie; Rebbert, Milt; Henry, Ross; Moller, Dieter

    We have designed and fabricated infrared filters for use at wavelengths from about 15 microns and longward. Unlike conventional quarter-wave dielectric filters used at the short wavelength end of this range ours are made from stacked metal grids which are spaced at a very small fraction of a wavelength apart. The individual lattice layers are made of gold the spacers are polyimide and they are assembled using integrated circuit processing techniques. We are able to model the filter performance accurately including the coupling of the propagating near-field electromagnetic modes using computer aided design codes which we have adapted for this purpose. We find no anomalous absorptions in the final product. The geometrical parameters of the grids are easily altered in practice allowing for the production of tuned filters with predictable useful transmission characteristics. The final result is a filter with precise predictable transmission characteristics as well as excellent cryogenic and handling properties. These infrared filters are analogous to submillimeter and millimeter wave filters that use metallic grids of much larger dimensions.

  6. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    SciTech Connect

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  7. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    SciTech Connect

    Guo, Yuzheng; Robertson, John

    2016-06-06

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  8. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  9. Stacking-dependent transport properties in few-layers graphene

    NASA Astrophysics Data System (ADS)

    Lima, Matheus Paes; Padilha, José Eduardo; Pontes, Renato Borges; Fazzio, Adalberto; Silva, Antônio José Roque da

    2017-01-01

    By performing ab initio electronic structure and transport calculations, we investigated the effects of the stacking order (Bernal (AB) and rhombohedral (ABC)) as well as the number of layers, in the electronic structure and charge transport of few-layers graphene (FLG). We observed that for the ABC stack the transport properties are derived from surface states close to the Fermi level connected to dispersive states with an exponential penetration towards the inner layers, whereas for the AB stacking the transport is distributed over all layers. We present a simple model for the resistances as a function of the number of layers which contemplates the different contribution of the surface and inner layers for the transport. However, even if the stackings AB and ABC present completely different electronic and transport properties, both present the same cohesive energies, showing the absence of a thermodynamical preference for a given kind of stacking.

  10. Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

    DOE PAGES

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  11. Imaging Stacking Order in Few-Layer Graphene

    SciTech Connect

    C Lui; Z Li; Z Chen; P Klimov; L Brus; T Heinz

    2011-12-31

    Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the material's electronic properties. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene. We find that 15% of exfoliated graphene tri- and tetralayers is composed of micrometer-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding 800 C.

  12. Laser micromachining as a metallization tool for microfluidic polymer stacks

    NASA Astrophysics Data System (ADS)

    Brettschneider, T.; Dorrer, C.; Czurratis, D.; Zengerle, R.; Daub, M.

    2013-03-01

    A novel assembly approach for the integration of metal structures into polymeric microfluidic systems is described. The presented production process is completely based on a single solid-state laser source, which is used to incorporate metal foils into a polymeric multi-layer stack by laser bonding and ablation processes. Chemical reagents or glues are not required. The polymer stack contains a flexible membrane which can be used for realizing microfluidic valves and pumps. The metal-to-polymer bond was investigated for different metal foils and plasma treatments, yielding a maximum peel strength of Rps = 1.33 N mm-1. A minimum structure size of 10 µm was determined by 3D microscopy of the laser cut line. As an example application, two different metal foils were used in combination to micromachine a standardized type-T thermocouple on a polymer substrate. An additional laser process was developed which allows metal-to-metal welding in close vicinity to the polymer substrate. With this process step, the reliability of the electrical contact could be increased to survive at least 400 PCR temperature cycles at very low contact resistances.

  13. Enhanced intervalley scattering in artificially stacked double-layer graphene

    NASA Astrophysics Data System (ADS)

    Iqbal, M. Z.; Kelekçi, Özgür; Iqbal, M. W.; Jin, Xiaozhan; Hwang, Chanyong; Eom, Jonghwa

    2014-08-01

    We fabricated artificially stacked double-layer graphene by sequentially transferring graphene grown by chemical vapor deposition. The double-layer graphene was characterized by Raman spectroscopy and transport measurements. A weak localization effect was observed for different charge carrier densities and temperatures. The obtained intervalley scattering rate was unusually high compared to normal Bernal-stacked bilayer or single-layer graphene. The sharp point defects, local deformation, or bending of graphene plane required for intervalley scattering from one Dirac cone to another seemed to be enhanced by the artificially stacked graphene layers.

  14. Layer-stacking effect on electronic structures of bilayer arsenene

    NASA Astrophysics Data System (ADS)

    Mi, Kui; Xie, Jiafeng; Si, M. S.; Gao, C. X.

    2017-01-01

    A monolayer of orthorhombic arsenic (arsenene) is a promising candidate for nano-electronic devices due to the uniquely electronic properties. To further extend its practical applications, an additional layer is introduced to tune the electronic structures. Four layer-stacking manners, namely AA-, AB-, AB‧-, and AC-stacking, are constructed and studied through using first-principles calculations. Compared with monolayer, an indirect-direct gap transition is realized in AB-stacking. More importantly, a semimetal feature appears in the AC- and AB‧-stacked bilayers, leaving the electronic structure of AA-stacking trivial. In addition, the energy dispersion around Γ is largely tuned from the layer-stacking effect. To understand the underlying physics, the \\textbf{k}\\cdot\\textbf{p} approximation is taken to address this issue. Our results show that the level repulsion from the additional layer domaintes the anisotropy of energy dispersion around Γ. The works like ours would shed new light on the tunability of the electronic structure in layered arsenene.

  15. Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone-Water-Last Treatment

    NASA Astrophysics Data System (ADS)

    Oshiyama, Itaru; Tai, Kaori; Hirano, Tomoyuki; Yamaguchi, Shinpei; Tanaka, Kazuaki; Hagimoto, Yoshiya; Uemura, Takayuki; Ando, Takashi; Watanabe, Koji; Yamamoto, Ryo; Kanda, Saori; Wang, Junli; Tateshita, Yasushi; Wakabayashi, Hitoshi; Tagawa, Yukio; Tsukamoto, Masanori; Iwamoto, Hayato; Saito, Masaki; Oshima, Masaharu; Toyoda, Satoshi; Nagashima, Naoki; Kadomura, Shingo

    2008-04-01

    In this paper, we demonstrate a wet treatment for the HfSix/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

  16. Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers

    NASA Astrophysics Data System (ADS)

    Hutzler, A.; Matthus, C. D.; Rommel, M.; Frey, L.

    2017-01-01

    The optical detectability of ultrathin conductive films (down to one atomic layer) can be enhanced by choosing distinct layer-stacks. A simple analytical approach using the transfer matrix method is applied for calculating the reflectance of arbitrary multi-layer stack systems with and without the ultrathin layer of interest on top in a wide wavelength range, including both the visible spectrum and the ultraviolet spectrum. Then, the detectability defined by the Michelson contrast was calculated. Performing these calculations for thickness variations of the individual layers in the stack allows determining optimum layer thicknesses, e.g., maximum overall contrast or maximum contrast for a given wavelength. To demonstrate the validity of the methodology, two thin film stacks were investigated, which use p-type silicon as a substrate material and partially covered by a single-layer graphene as a top layer. For each stack, two samples with different layer thicknesses were fabricated and their experimentally determined reflectance was compared to the calculated values. The first system consists of a single SiO2 layer with a thickness of 147 nm and 304 nm, respectively, and the second is a double layer stack consisting of a Si3N4 layer with a thickness of 54 nm and 195 nm, respectively, on top of an 11 nm SiO2 film. The Michelson contrast of single-layer graphene flakes on the latter layer stacks becomes very high (absolute value of more than 0.3) in the visible wavelength range. Additionally, in the UV-B range a large difference in the reflection of selected SiO2 layer thicknesses on silicon substrates with and without single-layer graphene on top is found with a decrease in the measured reflectance of up to 33%. The measured and calculated values showed a high conformity suggesting this approach usable for the calculation of reflectance and transmittance properties of arbitrary layer stack systems including thin conductive layers.

  17. Calculated stacking-fault energies of elemental metals

    NASA Astrophysics Data System (ADS)

    Rosengaard, N. M.; Skriver, H. L.

    1993-05-01

    We have performed ab initio calculations of twin, intrinsic, and extrinsic face-centered-cubic stacking faults for all the 3d, 4d, and 5d transition metals by means of a Green's-function technique, based on the linear-muffin-tin-orbitals method within the tight-binding and atomic-sphere approximations. The results are in excellent agreement with recent layer Korringa-Kohn-Rostoker Green's-function calculations where stacking-fault energies for Ni, Cu, Rh, Pd, Ag, Ir, and Au were found by means of the so-called force theorem. We find that the self-consistent fault energies for all the metals in the three transition series vary with atomic number essentially as the calculated structural energy differences between the face-centered-cubic and the hexagonal-close-packed phases. In addition we find that the simple relations between the different types of fault energies predicted by models based on the local atomic coordination are obeyed to a high degree of accuracy.

  18. Tests on Double Layer Metalization

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1983-01-01

    28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.

  19. Silicene beyond mono-layers--different stacking configurations and their properties.

    PubMed

    Kamal, C; Chakrabarti, Aparna; Banerjee, Arup; Deb, S K

    2013-02-27

    We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using state-of-the-art ab initio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Although a mono-layer of silicene possesses properties similar to those of graphene, our results show that the geometric and electronic properties of multi-layers of silicene are strikingly different from those of multi-layers of graphene. We observe that strong inter-layer covalent bonding exists between the layers in multi-layers of silicene as opposed to weak van der Waals bonding which exists between the graphene layers. The inter-layer bonding strongly influences the geometric and electronic structures of these multi-layers. Like bi-layers of graphene, silicene with two different stacking configurations AA and AB exhibits linear and parabolic dispersions around the Fermi level, respectively. However, unlike graphene, for bi-layers of silicene, these dispersion curves are shifted in the band diagram; this is due to the strong inter-layer bonding present in the latter. For n > 3, we study the geometric and electronic properties of multi-layers with four different stacking configurations, namely AAAA, AABB, ABAB and ABC. Our results on cohesive energy show that all the multi-layers considered are energetically stable. Furthermore, we find that the three stacking configurations (AAAA, AABB and ABC) containing tetrahedral coordination have much higher cohesive energy than the Bernal (ABAB) stacking configuration. This is in contrast to the case of multi-layers of graphene, where ABAB is reported to be the lowest energy configuration. We also observe that bands near the Fermi level in lower energy stacking configurations AAAA, AABB and ABC correspond to the surface atoms and these surface states are responsible for the semi-metallic

  20. Stacking dependent electronic structures of transition metal dichalcogenides heterobilayer

    NASA Astrophysics Data System (ADS)

    Lee, Yea-Lee; Park, Cheol-Hwan; Ihm, Jisoon

    The systematic study of the electronic structures and optical properties of the transition metal dichalcogenides (TMD) heterobilayers can significantly improve the designing of new electronic and optoelectronic devices. Here, we theoretically study the electronic structures and optical properties of TMD heterobilayers using the first-principles methods. The band structures of TMD heterobilayer are shown to be determined by the band alignments of the each layer, the weak interlayer interactions, and angle dependent stacking patterns. The photoluminescence spectra are investigated using the calculated band structures, and the optical absorption spectra are examined by the GW approximations including the electron-hole interaction through the solution of the Bethe-Salpeter equation. It is expected that the weak interlayer interaction gives rise to the substantial interlayer optical transition which will be corresponding to the interlayer exciton.

  1. Multiple layer identification label using stacked identification symbols

    NASA Technical Reports Server (NTRS)

    Schramm, Harry F. (Inventor)

    2005-01-01

    An automatic identification system and method are provided which employ a machine readable multiple layer label. The label has a plurality of machine readable marking layers stacked one upon another. Each of the marking layers encodes an identification symbol detectable using one or more sensing technologies. The various marking layers may comprise the same marking material or each marking layer may comprise a different medium having characteristics detectable by a different sensing technology. These sensing technologies include x-ray, radar, capacitance, thermal, magnetic and ultrasonic. A complete symbol may be encoded within each marking layer or a symbol may be segmented into fragments which are then divided within a single marking layer or encoded across multiple marking layers.

  2. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Saha, D.; Misra, P.; Bhartiya, S.; Gupta, M.; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    We report on the dimensional crossover of electron weak localization in ZnO/TiOx stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiOx on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ˜6-65 nm by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R⊙) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R⊙(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R⊙ and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiOx stacked layers which have potential applications in the field of transparent oxide electronics.

  3. Lattice-layer entanglement in Bernal-stacked bilayer graphene

    NASA Astrophysics Data System (ADS)

    Bittencourt, Victor A. S. V.; Bernardini, Alex E.

    2017-05-01

    The complete lattice-layer entanglement structure of Bernal-stacked bilayer graphene is obtained for the quantum system described by a tight-binding Hamiltonian which includes mass and bias voltage terms. Through a suitable correspondence with the parity-spin S U (2 )⊗S U (2 ) structure of a Dirac Hamiltonian, when it brings up tensor and pseudovector external field interactions, the lattice-layer degrees of freedom can be mapped into such a parity-spin two-qubit basis which supports the interpretation of the bilayer graphene eigenstates as entangled ones in a lattice-layer basis. The Dirac Hamiltonian mapping structure simply provides the tools for the manipulation of the corresponding eigenstates and eigenenergies of the Bernal-stacked graphene quantum system. The quantum correlational content is then quantified by means of quantum concurrence, in order to have the influence of mass and bias voltage terms quantified, and in order to identify the role of the trigonal warping of energy in the intrinsic entanglement. Our results show that while the mass term actively suppresses the intrinsic quantum entanglement of bilayer eigenstates, the bias voltage term spreads the entanglement in the Brillouin zone around the Dirac points. In addition, the interlayer coupling modifies the symmetry of the lattice-layer quantum concurrence around a given Dirac point. It produces some distortion on the quantum entanglement profile which follows the same pattern of the isoenergy line distortion in the Bernal-stacked bilayer graphene.

  4. Stacking faults in a layered cobalt tellurium phosphate oxochloride

    NASA Astrophysics Data System (ADS)

    Zimmermann, Iwan; Johnsson, Mats

    2015-02-01

    The new compound Co2Te3(PO4)O6Cl was synthesized by chemical reactions in a sealed and evacuated silica tube. The crystal structure was solved from single crystal diffraction data and is made up by charge neutral layers. Within the layers two types of chains are made up by edge sharing [CoO6] and [CoO5Cl] polyhedra respectively. The chains are separated by tellurium oxide and phosphate building blocks. There are only weak Van der Waals interactions in between the layers and severe diffuse scattering is observed due to faulted stacking of the layers. Structure solutions in a P-1 triclinic cell and a larger monoclinic cell in P21/c are discussed and compared to a computer generated model. The reasons for the stacking faults may be due to that there are two positions available for each layer that results in similar connectivity to the next layer in addition to the relatively wide channels in between the layers that reduce the Van der Waals interactions in between them.

  5. Novel fuel cell stack with coupled metal hydride containers

    NASA Astrophysics Data System (ADS)

    Liu, Zhixiang; Li, Yan; Bu, Qingyuan; Guzy, Christopher J.; Li, Qi; Chen, Weirong; Wang, Cheng

    2016-10-01

    Air-cooled, self-humidifying hydrogen fuel cells are often used for backup and portable power sources, with a metal hydride used as the hydrogen storage material. To provide a stable hydrogen flow to the fuel cell stack, heat must be provided to the metal hydride. Conventionally, the heat released from the exothermic reaction of hydrogen and oxygen in the fuel cell stack to the exhaust air is used to heat a separate metal hydride container. In this case, the heat is only partially used instead of being more closely coupled because of the heat transfer resistances in the system. To achieve better heat integration, a novel scheme is proposed whereby hydrogen storage and single fuel cells are more closely coupled. Based on this idea, metal hydride containers in the form of cooling plates were assembled between each pair of cells in the stack so that the heat could be directly transferred to a metal hydride container of much larger surface-to-volume ratio than conventional separate containers. A heat coupled fuel cell portable power source with 10 cells and 11 metal hydride containers was constructed and the experimental results show that this scheme is beneficial for the heat management of fuel cell stack.

  6. Stacked Ge nanocrystals with ultrathin SiO₂ separation layers.

    PubMed

    Zschintzsch, Manuel; von Borany, Johannes; Jeutter, Nicole M; Mücklich, Arndt

    2011-11-18

    The aim of this work is the tailored growth of Ge nanocrystals (NCs) in (GeO(x)/SiO(2)) multilayers (ML) for photovoltaic applications. For this purpose the fabrication of regularly stacked Ge NCs separated by ultrathin SiO(2) layers is essential to enable charge carrier transport by direct tunnelling. In this paper we report on the fabrication of (GeO(x)/SiO(2))(50) multilayer stacks via reactive dc magnetron sputtering and Ge NCs formation after subsequent annealing. It is shown that magnetron sputtering allows us to deposit very regular ML stacks with a total thickness of about 300 nm, characterized by ultrathin (down to 1 nm) and very smooth (roughness ∼ 0.6 nm) SiO(2) separation layers. A main challenge is to keep these properties for a thermal budget necessary to form Ge NCs. For this reason, the temperature dependence of phase separation. Ge crystallization and ML morphology was investigated by Rutherford backscattering, x-ray scattering, Raman spectroscopy and electron microscopy. The formation of size confined Ge NCs of about 5 nm after annealing of only 550 °C is confirmed. This low thermal budget ensures the suppression of GeO emanation and multilayer stability. Spectroscopic ellipsometry was applied to determine the optical Ge NC bandgap to (1.65 ± 0.5) eV.

  7. Enforced Layer-by-Layer Stacking of Energetic Salts towards High-Performance Insensitive Energetic Materials.

    PubMed

    Zhang, Jiaheng; Mitchell, Lauren A; Parrish, Damon A; Shreeve, Jean'ne M

    2015-08-26

    Development of modern high-performance insensitive energetic materials is significant because of the increasing demands for both military and civilian applications. Here we propose a rapid and facile strategy called the "layer hydrogen bonding pairing approach" to organize energetic molecules via layer-by-layer stacking, which grants access to tunable energetic materials with targeted properties. Using this strategy, an unusual energetic salt, hydroxylammonium 4-amino-furazan-3-yl-tetrazol-1-olate, with good detonation performances and excellent sensitivities, was designed, synthesized, and fully characterized. In addition, the expected unique layer-by-layer structure with a high crystal packing coefficient was confirmed by single-crystal X-ray crystallography. Calculations indicate that the layer-stacking structure of this material can absorb the mechanical stimuli-induced kinetic energy by converting it to layer sliding, which results in low sensitivity.

  8. Interference of the Bloch phase in layered materials with stacking shifts

    NASA Astrophysics Data System (ADS)

    Akashi, Ryosuke; Iida, Yo; Yamamoto, Kohei; Yoshizawa, Kanako

    2017-06-01

    In periodic systems, electronic wave functions of the eigenstates exhibit the periodically modulated Bloch phases and are characterized by their wave numbers k . We theoretically address the effects of the Bloch phase in general layered materials with a stacking shift. When the interlayer shift and the Bloch wave vector k satisfy certain conditions, interlayer transitions of electrons are prohibited by the interference of the Bloch phase. We specify the manifolds in the k space where the hybridization of the Bloch states between the layers is suppressed in accord with the stacking shift. These manifolds, named stacking-adapted interference manifolds (SAIM), are obviously applicable to general layered materials regardless of a detailed atomic configuration within the unit cell. We demonstrate the robustness and usefulness of the SAIM with first-principles calculations for layered boron nitride, transition-metal dichalcogenide, graphite, and black phosphorus. We also apply the SAIM to general three-dimensional crystals to derive special k-point paths for the respective Bravais lattices, along which the Bloch-phase interference strongly suppresses the band dispersion. Our theory provides a general view on the anisotropic electronic motion intrinsic to the periodic-lattice structure.

  9. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    PubMed Central

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  10. Spectrally tunable linear polarization rotation using stacked metallic metamaterials

    NASA Astrophysics Data System (ADS)

    Romain, Xavier; Baida, Fadi I.; Boyer, Philippe

    2017-08-01

    We make a theoretical study of the transmission properties of a stack of metallic metamaterials and show that is able to achieve a perfect transmission selectively exhibiting broadband (Q < 10) or extremely narrowband (Q > {10}5) polarization rotation. We especially highlight how the arrangement of the stacked structure, as well as the metamaterial unit cell geometry, has a large influence on transmission in the spectral domain. For this purpose, we use an extended analytical Jones formalism that allows us to obtain a rigorous and analytical expression of the transmission. Such versatile structures could find potential applications in polarimetry or in the control of light polarization for THz waves.

  11. Metal stack optimization for low-power and high-density for N7-N5

    NASA Astrophysics Data System (ADS)

    Raghavan, P.; Firouzi, F.; Matti, L.; Debacker, P.; Baert, R.; Sherazi, S. M. Y.; Trivkovic, D.; Gerousis, V.; Dusa, M.; Ryckaert, J.; Tokei, Z.; Verkest, D.; McIntyre, G.; Ronse, K.

    2016-03-01

    One of the key challenges while scaling logic down to N7 and N5 is the requirement of self-aligned multiple patterning for the metal stack. This comes with a large cost of the backend cost and therefore a careful stack optimization is required. Various layers in the stack have different purposes and therefore their choice of pitch and number of layers is critical. Furthermore, when in ultra scaled dimensions of N7 or N5, the number of patterning options are also much larger ranging from multiple LE, EUV to SADP/SAQP. The right choice of these are also needed patterning techniques that use a full grating of wires like SADP/SAQP techniques introduce high level of metal dummies into the design. This implies a large capacitance penalty to the design therefore having large performance and power penalties. This is often mitigated with extra masking strategies. This paper discusses a holistic view of metal stack optimization from standard cell level all the way to routing and the corresponding trade-off that exist for this space.

  12. Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

    PubMed

    Pang, Chin-Sheng; Hwu, Jenn-Gwo

    2014-01-01

    Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.

  13. Metal deposition using seed layers

    DOEpatents

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  14. Tunable Hydrophilic or Amphiphilic Coatings: A "Reactive Layer Stack" Approach.

    PubMed

    Frenzel, Ralf; Höhne, Susanne; Hanzelmann, Christian; Schmidt, Thomas; Winkler, René; Drechsler, Astrid; Bittrich, Eva; Eichhorn, Klaus-Jochen; Uhlmann, Petra

    2015-06-17

    Thin films with tunable properties are very interesting for potential applications as functional coatings with, for example, anti-icing or improved easy-to-clean properties. A novel "reactive layer stack" approach was developed to create covalently grafted mono- and multilayers of poly(glycidyl methacrylate)/poly(tert-butyl acrylate) diblock copolymers. Because these copolymers contain poly(glycidyl methacrylate) blocks they behave as self-cross-linking materials after creation of acrylic acid functionalities by splitting off the tert-butyl units. The ellipsometrically determined coating thickness of the resulting hydrophilic multilayers depended linearly on the number of applied layers. Amphiphilic films with tunable wettability were prepared using triblock terpolymers with an additional poly(methyl methacrylate) block. The mechanism of the formation of the (multi)layers was investigated in detail by studying the acidolysis of the surface-linked tert-butyl acrylate blocks by infrared reflection absorbance spectroscopy, accompanied by surface analysis using atomic force microscopy and contact angle measurements. In the case of the amphiphilic and switchable terpolymer layers this reaction was very sensitive to the used acidic reagent.

  15. Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

    NASA Technical Reports Server (NTRS)

    Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

    2009-01-01

    A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.

  16. Exchange coupling and switching fields of RE—TM double and triple layer stacks for direct overwrite

    NASA Astrophysics Data System (ADS)

    Raasch, D.; Wierenga, H.

    1997-04-01

    The recording properties of common single layer magneto-optical (MO) disks can be improved by introducing exchange coupled rare-earth (RE) transition-metal (TM) films, both from the point of view of capacity and data transfer rate. Direct overwrite (DOW) is a method to double the data transfer rate during writing, because the write process of new bits and the erase process of old bits is performed simultaneously. MO multilayer stacks must exhibit exchange coupling in order to be suitable for DOW. The switching fields of each layer depend on coercive energy, magnetic field energy and the energy of the interface wall between coupled layers. In this paper we discuss the dependence of switching fields on layer thickness and wall energy σw for several double and triple layer stacks. The memory and reference layers are TbFeCo and DyFeCo, respectively. Triple layer stacks have an intermediate layer (GdFe and GdFeCo) to adjust the wall energy. DOW presupposes a weak coupling at 300 K and a strong coupling at higher temperatures. This requires a very thick reference layer in double layer stacks, causing excessive heat capacities. However, for triple layers the DOW demands are met in much thinner stacks as the wall energy is adjusted through the intermediate layer. The wall energy of the intermediate layer is determined by its anisotropy. We studied the anisotropy of evaporated GdFe, GdCo and GdFeCo films as a function of composition. GdCo showed only in-plane anisotropy, while GdFe was perpendicularly magnetized for Fe contents up to 87 at%. Adding Co to GdFe leads to a layer with a temperature dependent easy axis. The carrier-to-noise ratio (CNR) of a series of magneto-optical disks, both double and triple layer stacks, was determined. The maximum CNR of 51.4 dB is comparable to results on a single layer disk with the same memory layer. On triple layer stacks a CNR > 45 dB could be written at a laser power below 9 mW.

  17. Effect of vacancy defects on generalized stacking fault energy of fcc metals.

    PubMed

    Asadi, Ebrahim; Zaeem, Mohsen Asle; Moitra, Amitava; Tschopp, Mark A

    2014-03-19

    Molecular dynamics (MD) and density functional theory (DFT) studies were performed to investigate the influence of vacancy defects on generalized stacking fault (GSF) energy of fcc metals. MEAM and EAM potentials were used for MD simulations, and DFT calculations were performed to test the accuracy of different common parameter sets for MEAM and EAM potentials in predicting GSF with different fractions of vacancy defects. Vacancy defects were placed at the stacking fault plane or at nearby atomic layers. The effect of vacancy defects at the stacking fault plane and the plane directly underneath of it was dominant compared to the effect of vacancies at other adjacent planes. The effects of vacancy fraction, the distance between vacancies, and lateral relaxation of atoms on the GSF curves with vacancy defects were investigated. A very similar variation of normalized SFEs with respect to vacancy fractions were observed for Ni and Cu. MEAM potentials qualitatively captured the effect of vacancies on GSF.

  18. Stacking faults and superstructures in a layered brownmillerite

    PubMed Central

    Krüger, H.; Stöber, S.; Welberry, T. R.; Withers, R. L.; Fitz Gerald, J. D.

    2011-01-01

    Single crystals of Ca4Fe2Mn0.5Ti0.5O9 have been synthesized using a flux method. The structural characterization using single-crystal X-ray diffraction revealed the space group Amma and unit-cell dimensions of a = 5.3510 (6), b = 26.669 (3), c = 5.4914 (6) Å. The structure is isotypic with Sr3NdFe3O9 [Barrier et al. (2005 ▸). Chem. Mater. 17, 6619–6623] and exhibits separated brownmillerite-type layers. One-dimensional diffuse scattering shows that the unit cell is doubled along c by alternating the intra-layer order of tetrahedral chains, causing stacking faults along the b direction. A computer simulation was performed, proving that the observed intensity variations along the diffuse scattering rods originates from two different local structures depending on the configuration of the tetrahedral chains. Selected-area electron diffraction experiments exhibit well ordered regions characterized by satellite reflections corresponding to two different superstructures. Both superstructures can be described using the superspace group A21/m(0βγ)0s, with γ = 0.5 and β ≃ 0.27 or β = 0. PMID:22101537

  19. A metallic interconnect for a solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    England, Diane Mildred

    A solid oxide fuel cell (SOFC) electrochemically converts the chemical energy of reaction into electrical energy. The commercial success of planar, SOFC stack technology has a number of challenges, one of which is the interconnect that electrically and physically connects the cathode of one cell to the anode of an adjacent cell in the SOFC stack and in addition, separates the anodic and cathodic gases. An SOFC stack operating at intermediate temperatures, between 600°C and 800°C, can utilize a metallic alloy as an interconnect material. Since the interconnect of an SOFC stack must operate in both air and fuel environments, the oxidation kinetics, adherence and electronic resistance of the oxide scales formed on commercial alloys were investigated in air and wet hydrogen under thermal cycling conditions to 800°C. The alloy, Haynes 230, exhibited the slowest oxidation kinetics and the lowest area-specific resistance as a function of oxidation time of all the alloys in air at 800°C. However, the area-specific resistance of the oxide scale formed on Haynes 230 in wet hydrogen was unacceptably high after only 500 hours of oxidation, which was attributed to the high resistivity of Cr2O3 in a reducing atmosphere. A study of the electrical conductivity of the minor phase manganese chromite, MnXCr3-XO4, in the oxide scale of Haynes 230, revealed that a composition closer to Mn2CrO4 had significantly higher electrical conductivity than that closer to MnCr 2O4. Haynes 230 was coated with Mn to form a phase closer to the Mn2CrO4 composition for application on the fuel side of the interconnect. U.S. Patent No. 6,054,231 is pending. Although coating a metallic alloy is inexpensive, the stringent economic requirements of SOFC stack technology required an alloy without coating for production applications. As no commercially available alloy, among the 41 alloys investigated, performed to the specifications required, a new alloy was created and designated DME-A2. The oxide scale

  20. Cathodoluminescence Study of the Properties of Stacking Faults in 4H-SiC Homoepitaxial Layers

    DTIC Science & Technology

    2009-01-01

    Cathodoluminescence study of the properties of stacking faults in 4H- SiC homoepitaxial layers Serguei I. Maximenko,1,a Jaime A. Freitas, Jr.,1 Paul...2009 In-grown stacking faults in n-type 4H- SiC epitaxial layers have been investigated by real-color cathodoluminescence imaging and spectroscopy...carried out at room and liquid helium temperatures. Stacking faults with 8H stacking order were observed, as well as double layer and multilayer 3C- SiC

  1. Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

    SciTech Connect

    Chang, C.-Y. Takenaka, M.; Takagi, S.; Ichikawa, O.; Osada, T.; Hata, M.; Yamada, H.

    2015-08-28

    We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

  2. Nonlocal effect on optic spectrum of a periodic dielectric-metal stack.

    PubMed

    Paredes-Juárez, Alejandro; Iakushev, Denis A; Flores-Desirena, Benito; Makarov, Nykolay M; Pérez-Rodríguez, Felipe

    2014-04-07

    On the basis of the formalism of the Boltzmann kinetic equation for the distribution function of the conduction electrons, the photonic band structure of binary dielectric-metal superlattice is theoretically studied. Using the constitutive nonlocal relation between the electrical current density and the electric field inside the metallic layer, the dispersion equation for photonic eigenmodes in the periodic stack is analytically expressed in terms of the surface impedances at the interfaces of the metal and dielectric layers. In the case of very thin metallic layers, the optic spectrum for the superlattice exhibits narrow pass bands as a result of the strong contrast between the impedances of the dielectric and the metal. The narrow pass bands are attributed to Fabry-Perot resonances in the relatively-thick dielectric layer. The metal nonlocality is well pronounced in the infrared and, therefore, the nonlocal effect upon the photonic band structure of the superlattice can be strong when the Fabry-Perot resonance bands are in that frequency range. Our results for the photonic spectrum have been compared with those obtained within the local Drude-Lorentz model. Noticeably differences not only in the the magnitude, but also in the sign of the real part of the Bloch wave number in the Fabry-Perot resonance bands, have been found.

  3. Fabrication and applications of multi-layer graphene stack on transparent polymer

    NASA Astrophysics Data System (ADS)

    Krajewska, Aleksandra; Pasternak, Iwona; Sobon, Grzegorz; Sotor, Jaroslaw; Przewloka, Aleksandra; Ciuk, Tymoteusz; Sobieski, Jan; Grzonka, Justyna; Abramski, Krzysztof M.; Strupinski, Wlodek

    2017-01-01

    In this report, we demonstrate the preparation method of a multi-layer stack with a pre-defined number of graphene layers, which was obtained using chemical vapor deposition graphene deposited on a copper substrate and subsequently transferred onto a poly(methyl methacrylate) (PMMA) substrate. The prepared multi-layer stack can also be transferred onto an arbitrary substrate and in the end, the polymer can be removed, which in consequence significantly increases the range of possible graphene applications. The multi-layer character was confirmed by optical transmittance measurements and Raman spectroscopy, whereas the microstructure of the multi-layer graphene stack was investigated using Scanning Electron Microscopy. The electrical properties in the function of the number of graphene layers were assessed with standard Hall Effect measurements. Finally, we showed the practical application of the multi-layer graphene stack as a saturable absorber of a mode-locked Er-doped fiber laser.

  4. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M.; Bhartiya, S.; Gupta, M.

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  5. Phase Modulator with Terahertz Optical Bandwidth Formed by Multi-Layered Dielectric Stack

    NASA Technical Reports Server (NTRS)

    Keys, Andrew S. (Inventor); Fork, Richard L. (Inventor)

    2005-01-01

    An optical phase modulator includes a bandpass multilayer stack, formed by a plurality of dielectric layers, preferably of GaAs and AlAs, and having a transmission function related to the refractive index of the layers of the stack, for receiving an optical input signal to be phase modulated. A phase modulator device produces a nonmechanical change in the refractive index of each layer of the stack by, e.g., the injection of free carrier, to provide shifting of the transmission function so as to produce phase modulation of the optical input signal and to thereby produce a phase modulated output signal.

  6. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain

    SciTech Connect

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L.; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-06-13

    Two-dimensional (2D) nanostructures emerge as one of leading topics in fundamental materials science and could enable next generation nanoelectronic devices. Beyond graphene and molybdenum disulphide, layered complex oxides are another large group of promising 2D candidates because of their strong interplay of intrinsic charge, spin, orbital and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials exhibiting new phenomena beyond their conventional form. Here we report the strain-driven self-assembly of Bismuth-based supercells (SC) with a 2D layered structure, and elucidate the fundamental growth mechanism with combined experimental tools and first-principles calculations. The study revealed that the new layered structures were formed by the strain-enabled self-assembled atomic layer stacking, i.e., alternative growth of Bi2O2 layer and [Fe0.5Mn0.5]O6 layer. The strain-driven approach is further demonstrated in other SC candidate systems with promising room-temperature multiferroic properties. This well-integrated theoretical and experimental study inspired by the Materials Genome Initiatives opens up a new avenue in searching and designing novel 2D layered complex oxides with enormous promises.

  7. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain

    SciTech Connect

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L.; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-06-13

    Two-dimensional (2D) nanostructures emerge as one of leading topics in fundamental materials science and could enable next generation nanoelectronic devices. Beyond graphene and molybdenum disulphide, layered complex oxides are another large group of promising 2D candidates because of their strong interplay of intrinsic charge, spin, orbital and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials exhibiting new phenomena beyond their conventional form. Here we report the strain-driven self-assembly of Bismuth-based supercells (SC) with a 2D layered structure, and elucidate the fundamental growth mechanism with combined experimental tools and first-principles calculations. The study revealed that the new layered structures were formed by the strain-enabled self-assembled atomic layer stacking, i.e., alternative growth of Bi2O2 layer and [Fe0.5Mn0.5]O6 layer. The strain-driven approach is further demonstrated in other SC candidate systems with promising room-temperature multiferroic properties. This well-integrated theoretical and experimental study inspired by the Materials Genome Initiatives opens up a new avenue in searching and designing novel 2D layered complex oxides with enormous promises.

  8. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain

    DOE PAGES

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; ...

    2016-06-13

    Two-dimensional (2D) nanostructures emerge as one of leading topics in fundamental materials science and could enable next generation nanoelectronic devices. Beyond graphene and molybdenum disulphide, layered complex oxides are another large group of promising 2D candidates because of their strong interplay of intrinsic charge, spin, orbital and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials exhibiting new phenomena beyond their conventional form. Here we report the strain-driven self-assembly of Bismuth-based supercells (SC) with a 2D layered structure, and elucidate the fundamental growth mechanism with combined experimental tools and first-principles calculations.more » The study revealed that the new layered structures were formed by the strain-enabled self-assembled atomic layer stacking, i.e., alternative growth of Bi2O2 layer and [Fe0.5Mn0.5]O6 layer. The strain-driven approach is further demonstrated in other SC candidate systems with promising room-temperature multiferroic properties. This well-integrated theoretical and experimental study inspired by the Materials Genome Initiatives opens up a new avenue in searching and designing novel 2D layered complex oxides with enormous promises.« less

  9. Control of layer stacking in CVD graphene under quasi-static condition.

    PubMed

    Subhedar, Kiran M; Sharma, Indu; Dhakate, Sanjay R

    2015-09-14

    The type of layer stacking in bilayer graphene has a significant influence on its electronic properties because of the contrast nature of layer coupling. Herein, different geometries of the reaction site for the growth of bilayer graphene by the chemical vapor deposition (CVD) technique and their effects on the nature of layer stacking are investigated. Micro-Raman mapping and curve fitting analysis confirmed the type of layer stacking for the CVD grown bilayer graphene. The samples grown with sandwiched structure such as quartz/Cu foil/quartz along with a spacer, between the two quartz plates to create a sealed space, resulted in Bernal or AB stacked bilayer graphene while the sample sandwiched without a spacer produced the twisted bilayer graphene. The contrast difference in the layer stacking is a consequence of the difference in the growth mechanism associated with different geometries of the reaction site. The diffusion dominated process under quasi-static control is responsible for the growth of twisted bilayer graphene in sandwiched geometry while surface controlled growth with ample and continual supply of carbon in sandwiched geometry along with a spacer, leads to AB stacked bilayer graphene. Through this new approach, an efficient technique is presented to control the nature of layer stacking.

  10. Four-Dimensional Lung Treatment Planning in Layer-Stacking Carbon Ion Beam Treatment: Comparison of Layer-Stacking and Conventional Ungated/Gated Irradiation

    SciTech Connect

    Mori, Shinichiro; Kanematsu, Nobuyuki; Asakura, Hiroshi; Sharp, Gregory C.; Kumagai, Motoki; Dobashi, Suguru; Nakajima, Mio; Yamamoto, Naoyoshi; Kandatsu, Susumu; Baba, Masayuki

    2011-06-01

    Purpose: We compared four-dimensional (4D) layer-stacking and conventional carbon ion beam distribution in the treatment of lung cancer between ungated and gated respiratory strategies using 4DCT data sets. Methods and Materials: Twenty lung patients underwent 4DCT imaging under free-breathing conditions. Using planning target volumes (PTVs) at respective respiratory phases, two types of compensating bolus were designed, a full single respiratory cycle for the ungated strategy and an approximately 30% duty cycle for the exhalation-gated strategy. Beams were delivered to the PTVs for the ungated and gated strategies, PTV(ungated) and PTV(gated), respectively, which were calculated by combining the respective PTV(Tn)s by layer-stacking and conventional irradiation. Carbon ion beam dose distribution was calculated as a function of respiratory phase by applying a compensating bolus to 4DCT. Accumulated dose distributions were calculated by applying deformable registration. Results: With the ungated strategy, accumulated dose distributions were satisfactorily provided to the PTV, with D95 values for layer-stacking and conventional irradiation of 94.0% and 96.2%, respectively. V20 for the lung and Dmax for the spinal cord were lower with layer-stacking than with conventional irradiation, whereas Dmax for the skin (14.1 GyE) was significantly lower (21.9 GyE). In addition, dose conformation to the GTV/PTV with layer-stacking irradiation was better with the gated than with the ungated strategy. Conclusions: Gated layer-stacking irradiation allows the delivery of a carbon ion beam to a moving target without significant degradation of dose conformity or the development of hot spots.

  11. About zone structure of a stack of a cholesteric liquid crystal and isotropic medium layers

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.; Matinyan, G. K.; Harutyunyan, M. Z.; Harutyunyan, E. M.

    2014-05-01

    The optical properties of a stack of metamaterial-based cholesteric liquid crystal (CLC) layers and isotropic medium layers are investigated. CLCs with two types of chiral nihility are defined. The peculiarities of the reflection spectra of this system are investigated and it is shown that the reflection spectra of the stacks of CLC layers of these two types differ from each other. The influence of: the CLC sublayer thicknesses; incidence angle; local dielectric (magnetic) anisotropy of the CLC layers; refraction indices and thicknesses of the isotropic media layers on the reflection spectra and other optical characteristics of the system is investigated.

  12. Inter-layered clay stacks in Jurassic shales

    NASA Technical Reports Server (NTRS)

    Pye, K.; Krinsley, D. H.

    1983-01-01

    Scanning electron microscopy in the backscattered electron mode is used together with energy-dispersive X-ray microanalysis to show that Lower Jurassic shales from the North Sea Basin contain large numbers of clay mineral stacks up to 150 microns in size. Polished shale sections are examined to determine the size, shape orientation, textural relationships, and internal compositional variations of the clays. Preliminary evidence that the clay stacks are authigenic, and may have formed at shallow burial depths during early diagenesis, is presented.

  13. Layer-by-layer graphene/TCNQ stacked films as conducting anodes for organic solar cells.

    PubMed

    Hsu, Chang-Lung; Lin, Cheng-Te; Huang, Jen-Hsien; Chu, Chih-Wei; Wei, Kung-Hwa; Li, Lain-Jong

    2012-06-26

    Large-area graphene grown by chemical vapor deposition (CVD) is a promising candidate for transparent conducting electrode applications in flexible optoelectronic devices such as light-emitting diodes or organic solar cells. However, the power conversion efficiency (PCE) of the polymer photovoltaic devices using a pristine CVD graphene anode is still not appealing due to its much lower conductivity than that of conventional indium tin oxide. We report a layer-by-layer molecular doping process on graphene for forming sandwiched graphene/tetracyanoquinodimethane (TCNQ)/graphene stacked films for polymer solar cell anodes, where the TCNQ molecules (as p-dopants) were securely embedded between two graphene layers. Poly(3-hexylthiophene)/phenyl-C61-butyric acid methyl ester (P3HT/PCBM) bulk heterojunction polymer solar cells based on these multilayered graphene/TCNQ anodes are fabricated and characterized. The P3HT/PCBM device with an anode structure composed of two TCNQ layers sandwiched by three CVD graphene layers shows optimum PCE (∼2.58%), which makes the proposed anode film quite attractive for next-generation flexible devices demanding high conductivity and transparency.

  14. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    PubMed

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-06

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

  15. Influence of stacking fault energy on friction of nanotwinned metals

    NASA Astrophysics Data System (ADS)

    Zhang, J. J.; Wang, Z. F.; Sun, T.; Yan, Y. D.

    2016-12-01

    The unique dislocation-twin boundary (TB) interactions that govern the extraordinary mechanical properties of nanotwinned (NT) metals have the strong intrinsic effect of material energy and the extrinsic effect of feature size. In this work, we perform molecular dynamics (MD) simulations to elucidate fundamental deformation mechanisms of two NT face-centered cubic (FCC) metals (Cu and Pd) under probe-based friction, with an emphasis on evaluating the influence of both material’s intrinsic energy barrier and extrinsic grain size on the microscopic deformation behavior and correlated macroscopic frictional results of the materials. Simulation results reveal that individual deformation modes of dislocation mechanisms, dislocation-TB interactions, TB-associated mechanisms, deformation twinning and grain boundary (GB) accommodation work in parallel in the plastic deformation of the materials, and their competition is strongly influenced by both the intrinsic energy barriers for the nucleation of stacking faults and twin faults, and the extrinsic grain size. Consequently, both the frictional response and worn surface morphology present strong anisotropic characteristics. It is also found that the deformation behavior of NT Pd under a localized multi-axis stress state is significantly different from that which occurs under a uniaxial stress state. These findings will advance the rational design and synthesis of nanostructured materials with advanced frictional properties.

  16. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, Chol K.; Lesuer, Donald R.

    1995-01-01

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step.

  17. Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and making same

    DOEpatents

    Syn, C.K.; Lesuer, D.R.

    1995-07-04

    A laminated metal composite of low flow stress layers and high flow stress layers is described which is formed using flow constraining elements, preferably in the shape of rings, individually placed around each of the low flow stress layers while pressure is applied to the stack to bond the layers of the composite together, to thereby restrain the flow of the low flow stress layers from the stack during the bonding. The laminated metal composite of the invention is made by the steps of forming a stack of alternate layers of low flow stress layers and high flow stress layers with each layer of low flow stress material surrounded by an individual flow constraining element, such as a ring, and then applying pressure to the top and bottom surfaces of the resulting stack to bond the dissimilar layers together, for example, by compression rolling the stack. In a preferred embodiment, the individual flow constraining elements surrounding the layers of low flow stress material are formed of a material which may either be the same material as the material comprising the high flow stress layers, or have similar flow stress characteristics to the material comprising the high flow stress layers. Additional sacrificial layers may be added to the top and bottom of the stack to avoid damage to the stack during the bonding step; and these additional layers may then be removed after the bonding step. 5 figs.

  18. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    NASA Astrophysics Data System (ADS)

    Cho, Ikjun; Kim, Beom Joon; Ryu, Sook Won; Cho, Jeong Ho; Cho, Jinhan

    2014-12-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-AuNPs) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-AuNP)n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i.e. PAD/TOA-AuNP)1) with a number density of 1.82 × 1012 cm-2, the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four AuNP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔVth) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 106) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.

  19. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array.

    PubMed

    Cho, Ikjun; Kim, Beom Joon; Ryu, Sook Won; Cho, Jeong Ho; Cho, Jinhan

    2014-12-19

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au(NPs)) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au(NP))(n) films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i.e. PAD/TOA-Au(NP))1) with a number density of 1.82 × 10(12) cm(-2), the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au(NP) layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV(th)) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10(6)) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.

  20. Stacking of lamellae in Mg/Al hydrotalcites: Effect of metal ion concentrations on morphology

    SciTech Connect

    Panda, H.S.; Srivastava, R.; Bahadur, D.

    2008-06-03

    A hybrid nanocomposite based on the intercalation of carbonate anion has been synthesized through co-precipitation technique. Powder X-ray diffraction patterns (PXRD) showed pure layered double hydroxide (LDH) phases having crystallite size around 20 and 13 nm in 'a' and 'c' crystallographic directions, respectively. Fourier transform infrared and Raman spectroscopy measurements exhibit shifting of bands with increase of divalent metal ion concentration and it further suggests the presence of carbonate anions. Differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA) exhibit the three stages of thermal degradation, which is characteristic behaviour of layered double hydroxide. CHN and energy dispersive X-ray analysis support the PXRD and spectroscopy results. The nature of charge observed through Zeta potential analyzer is positive. Transmission electron microscope (TEM) exhibits the characteristic LDH platelet morphology with the platelets stacked one above the other.

  1. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J. L.; Cristiano, F.

    2016-12-01

    The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the nature of these layers. In this paper we specifically investigated the boron out-diffusion from a silicon junction into the silicon oxide in presence of a silicon oxide/silicon nitride capping bi-layer similar to the stacks used to form sidewall spacers. After 120 s anneal we observed with secondary ion mass spectrometry (SIMS) substantial boron dose loss in silicon and segregation at the silicon oxide interface related to oxide and nitride material properties, in particular to the hydrogen concentration. We then modeled the boron profiles in both silicon and oxide as a function of the hydrogen static and dynamic in the materials. The exponential-like boron diffusion profiles observed in oxide are reproduced by introducing a long hop mechanism mediated with hydrogen-related defects (HRDs).

  2. Creating CZTS thin films via stacked metallic CVD and sulfurization

    NASA Astrophysics Data System (ADS)

    Bielecki, Anthony

    Cu2ZnSnS4 (CZTS) thin-film photovoltaics is an increasingly important area of research for solar energy due to the high abundance and low toxicity of the elements used. A series of chemical vapor depositions (CVDs) with copper, tin, and zinc precursors were carried out to create layered thin films on quartz substrates. The viability of creating CZTS using these precursors was examined. As far as the author is aware, no work has yet been published on creating CZTS using the particular tin precursor that was used here, Dibutyltin Diacetate. Four different precursor stacking sequences were examined. Depositions were characterized using atomic force microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction, and four-point resistivity measurements. It was found that the ordering of precursors has a significant effect on the properties of the resulting thin films. The band gap energies were found to range from 1.08 eV to 2.02 eV.

  3. Ternary metal-rich sulfide with a layered structure

    DOEpatents

    Franzen, Hugo F.; Yao, Xiaoqiang

    1993-08-17

    A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

  4. Synthesis of aluminium indium nitride (AlInN) thin films by stacked elemental layers method

    NASA Astrophysics Data System (ADS)

    Afzal, Naveed; Devarajan, Mutharasu; Ibrahim, Kamarulazizi

    2014-07-01

    AlInN thin films were synthesized on Si substrates by using stacked elemental layers (SEL) technique. Three stacking sequence Al/InN, Al/InN/Al/InN and Al/InN/Al/InN/Al/InN were prepared on Si (1 0 0) substrates by reactive RF sputtering of In target in Ar-N2 and DC sputtering of Al target in Ar atmosphere at room temperature. Annealing of the deposited stacks was carried out at 400 °C for 6 h in a three zone tube furnace. Structural properties of the annealed films were investigated using X-ray diffraction (XRD) whereas the surface analysis of the films was carried out using field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). XRD results show the formation of wurtzite AlInN thin films which become more obvious with increasing the stacked layers. FESEM analysis reveals drops-like polycrystalline films structure with randomly oriented grains whereas the AFM results show a decrease in the surface roughness with increasing stacking sequence. The formation of more prominent AlInN films with increase of stacking layers is attributed to a uniform interaction among the top and bottom Al and InN multilayers as a result of the annealing.

  5. Reversible loss of Bernal stacking during the deformation of few-layer graphene in nanocomposites.

    PubMed

    Gong, Lei; Young, Robert J; Kinloch, Ian A; Haigh, Sarah J; Warner, Jamie H; Hinks, Jonathan A; Xu, Ziwei; Li, Li; Ding, Feng; Riaz, Ibtsam; Jalil, Rashid; Novoselov, Kostya S

    2013-08-27

    The deformation of nanocomposites containing graphene flakes with different numbers of layers has been investigated with the use of Raman spectroscopy. It has been found that there is a shift of the 2D band to lower wavenumber and that the rate of band shift per unit strain tends to decrease as the number of graphene layers increases. It has been demonstrated that band broadening takes place during tensile deformation for mono- and bilayer graphene but that band narrowing occurs when the number of graphene layers is more than two. It is also found that the characteristic asymmetric shape of the 2D Raman band for the graphene with three or more layers changes to a symmetrical shape above about 0.4% strain and that it reverts to an asymmetric shape on unloading. This change in Raman band shape and width has been interpreted as being due to a reversible loss of Bernal stacking in the few-layer graphene during deformation. It has been shown that the elastic strain energy released from the unloading of the inner graphene layers in the few-layer material (~0.2 meV/atom) is similar to the accepted value of the stacking fault energies of graphite and few layer graphene. It is further shown that this loss of Bernal stacking can be accommodated by the formation of arrays of partial dislocations and stacking faults on the basal plane. The effect of the reversible loss of Bernal stacking upon the electronic structure of few-layer graphene and the possibility of using it to modify the electronic structure of few-layer graphene are discussed.

  6. Reversible Loss of Bernal Stacking during the Deformation of Few-Layer Graphene in Nanocomposites

    PubMed Central

    2013-01-01

    The deformation of nanocomposites containing graphene flakes with different numbers of layers has been investigated with the use of Raman spectroscopy. It has been found that there is a shift of the 2D band to lower wavenumber and that the rate of band shift per unit strain tends to decrease as the number of graphene layers increases. It has been demonstrated that band broadening takes place during tensile deformation for mono- and bilayer graphene but that band narrowing occurs when the number of graphene layers is more than two. It is also found that the characteristic asymmetric shape of the 2D Raman band for the graphene with three or more layers changes to a symmetrical shape above about 0.4% strain and that it reverts to an asymmetric shape on unloading. This change in Raman band shape and width has been interpreted as being due to a reversible loss of Bernal stacking in the few-layer graphene during deformation. It has been shown that the elastic strain energy released from the unloading of the inner graphene layers in the few-layer material (∼0.2 meV/atom) is similar to the accepted value of the stacking fault energies of graphite and few layer graphene. It is further shown that this loss of Bernal stacking can be accommodated by the formation of arrays of partial dislocations and stacking faults on the basal plane. The effect of the reversible loss of Bernal stacking upon the electronic structure of few-layer graphene and the possibility of using it to modify the electronic structure of few-layer graphene are discussed. PMID:23899378

  7. Spin and valley resolved Landau level crossing in tri-layer ABA stacked graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Gupta, Vishakha; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Deshmukh, Mandar

    We present quantum Hall measurements on a high quality encapsulated tri-layer graphene device. Low temperature field effect mobility of this device is around 500,000 cm2/Vs and we see SdH oscillations at a magnetic field as low as 0.3 T. Quantum Hall measurements confirm that the chosen tri layer graphene is Bernal (ABA) stacked. Due to the presence of both mass-less monolayer like Dirac fermions and massive bi-layer like Dirac fermions in Bernal stacked tri-layer graphene, there are Landau level crossings between monolayer and bi-layer bands in quantum Hall regime. Although most of the Landau Level crossings are predominantly present on the electron sides, we also observe signatures of the crossings on the hole side. This behaviour is consistent with the asymmetry of electron and hole in ABA tri-layer graphene. We observe a series of crossings of the spin and valley resolved Landau Levels.

  8. Carrier scattering in high-κ/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Zeng, Zaiping; Triozon, François; Niquet, Yann-Michel

    2017-03-01

    A significant degradation of the mobility has been repeatedly observed at low inversion density in high-κ/metal gate metal-oxide-semiconductor field-effect transistors. However, the scattering mechanisms responsible for this degradation are still debated. It is often assumed that the mobility is limited by remote charges (RCS) at the interface between SiO2 and HfO2. However, the amount of charges needed to reproduce the experimental mobilities is usually very high (a few 1013 cm-2), and does not seem to be consistent with the measured threshold voltages. Scattering by localized dipoles hardly solves these discrepancies. Here, we investigate the contribution from three alternative mechanisms in a non-equilibrium Green's functions framework: (i) scattering by band offset fluctuations at the SiO2/HfO2 interface, (ii) scattering by dielectric constant fluctuations in SiO2 and HfO2, and (iii) scattering by workfunction fluctuations in a granular metal gate. None of these mechanisms significantly shifts the threshold voltage. We show that mechanisms (i) and (iii) efficiently scatter the carriers at low inversion densities. This reduces the amount of RCS charges needed to reproduce the experimental data. RCS and these mechanisms show different dependences on the thickness of the HfO2 layer, which might help to identify the dominant contributions.

  9. Photonic density of states of a stack of cholesteric liquid crystals and isotropic medium layers

    NASA Astrophysics Data System (ADS)

    Oganesyan, K. B.; Gevorgyan, A. H.; Kocharian, A. N.; Vardanyan, G. A.; Chilingaryan, Yu. S.; Santrosyan, E. A.; Rostovtsev, Y. V.

    2014-10-01

    We investigated the zone structure peculiarities and the photonic density of states (PDS) of the eigen polarizations (EPs) in the system composed of a stack of layers of a cholesteric liquid crystal (CLC) and an isotropic medium. The problem was solved by Ambartsumian's layer addition modified method. The influence of the CLC sublayer thicknesses and the thicknesses of the isotropic media layers on the reflection an PDS spectra of the system is investigated.

  10. Ultra-broadband, wide angle absorber utilizing metal insulator multilayers stack with a multi-thickness metal surface texture.

    PubMed

    Ghobadi, Amir; Dereshgi, Sina Abedini; Hajian, Hodjat; Bozok, Berkay; Butun, Bayram; Ozbay, Ekmel

    2017-07-06

    In this paper, we propose a facile route to fabricate a metal insulator multilayer stack to obtain ultra-broadband, wide angle behavior from the structure. The absorber, which covers near infrared (NIR) and visible (Vis) ranges, consists of a metal-insulator-metal-insulator (MIMI) multilayer where the middle metal layer has a variant thickness. It is found that this non-uniform thickness of the metal provides us with an absorption that is much broader compared to planar architecture. In the non-uniform case, each thickness is responsible for a specific wavelength range where the overall absorption is the superposition of these resonant responses and consequently a broad, perfect light absorption is attained. We first numerically examine the impact of different geometries on the overall light absorption property of the multilayer design. Afterward, we fabricate the designs and characterize them to experimentally verify our numerical findings. Characterizations show a good agreement with numerical results where the optimum absorption bandwidth for planar design is found to be 620 nm (380 nm-1000 nm) and it is significantly boosted to an amount of 1060 nm (350 nm-1410 nm) for multi-thickness case.

  11. Dynamic Recrystallization of Low Stacking Fault Energy Metals

    DTIC Science & Technology

    2007-11-02

    dynamic recovery" occurs by progressive (slow) transformation of subgrain boundaries (LAGB) into grain boundaries (HAGB) - dynamic recovery is weak ...homogeneous ( weak ∆ρ) - the rate of grain boundary migration is high - the rate of grain boundary migration is low low stacking fault energy materials...Cu, γ-iron and austenitic steels, Ni-base superalloys, ... high stacking fault energy materials: Al, α-iron and ferritic steels, β- titanium

  12. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    NASA Astrophysics Data System (ADS)

    Costa, Sara D.; Weis, Johan Ek; Frank, Otakar; Fridrichová, Michaela; Kalbac, Martin

    2016-06-01

    In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D‧) are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D‧ Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.

  13. Interplay between intrinsic and stacking-fault magnetic domains in bi-layered manganites

    SciTech Connect

    Hossain, M.A; Burkhardt, Mark H.; Sarkar, S.; Ohldag, H.; Chuang, Y.-D.; Scholl, A.; Young, A.T.; Doran, A.; Dessau, D.S.; Zheng, H.; Mitchell, J.F.; Durr, H.A.; Stohr, J.

    2012-09-11

    We present a low temperature X-ray photoemission electron microscopy study of the bi-layered manganite compound La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} (BL-LSMO) to investigate the influence of stacking faults, which are structurally and magnetically different from the bi-layered host. In BL-LSMO small magnetic moment persists to T* = 300K, well above the Curie temperature of 120K (T{sub C}). Our magnetic images show that 3D stacking faults are responsible for the T* transition. Furthermore, close to the T{sub C}, stacking faults are well coupled to the bi-layered host with latter magnetic domains controlling the spin direction of the stacking faults. Contrary to recent reports, we find that stacking faults do not seed magnetic domains in the host via an exchange spring mechanism and the intrinsic T{sub C} of the BL-LSMO is not lower than 120K.

  14. Microfabrication of stacks of acoustic matching layers for 15 MHz ultrasonic transducers.

    PubMed

    Manh, Tung; Nguyen, Anh-Tuan Thai; Johansen, Tonni F; Hoff, Lars

    2014-02-01

    This paper presents a novel method used to manufacture stacks of multiple matching layers for 15 MHz piezoelectric ultrasonic transducers, using fabrication technology derived from the MEMS industry. The acoustic matching layers were made on a silicon wafer substrate using micromachining techniques, i.e., lithography and etch, to design silicon and polymer layers with the desired acoustic properties. Two matching layer configurations were tested: a double layer structure consisting of a silicon-polymer composite and polymer and a triple layer structure consisting of silicon, composite, and polymer. The composite is a biphase material of silicon and polymer in 2-2 connectivity. The matching layers were manufactured by anisotropic wet etch of a (110)-oriented Silicon-on-Insulator wafer. The wafer was etched by KOH 40 wt%, to form 83 μm deep and 4.5mm long trenches that were subsequently filled with Spurr's epoxy, which has acoustic impedance 2.4 MRayl. This resulted in a stack of three layers: The silicon substrate, a silicon-polymer composite intermediate layer, and a polymer layer on the top. The stacks were bonded to PZT disks to form acoustic transducers and the acoustic performance of the fabricated transducers was tested in a pulse-echo setup, where center frequency, -6 dB relative bandwidth and insertion loss were measured. The transducer with two matching layers was measured to have a relative bandwidth of 70%, two-way insertion loss 18.4 dB and pulse length 196 ns. The transducers with three matching layers had fractional bandwidths from 90% to 93%, two-way insertion loss ranging from 18.3 to 25.4 dB, and pulse lengths 326 and 446 ns. The long pulse lengths of the transducers with three matching layers were attributed to ripple in the passband. Copyright © 2013 Elsevier B.V. All rights reserved.

  15. Microchannel neural interface manufacture by stacking silicone and metal foil laminae

    NASA Astrophysics Data System (ADS)

    Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

    2016-06-01

    Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

  16. Large changes of graphene conductance as a function of lattice orientation between stacked layers

    NASA Astrophysics Data System (ADS)

    Lee, Hyunsoo; Qi, Yabing; Kwon, Sangku; Salmeron, Miquel; Park, Jeong Young

    2015-01-01

    Using the conductive tip of an atomic force microscope as an electrode, we found that the electrical conductance of graphite terraces separated by steps can vary by large factors of up to 100, depending on the relative lattice orientation of the surface and subsurface layers. This effect can be attributed to interlayer interactions that, when stacked commensurately in a Bernal sequence (ABAB…), cause the band gap to open. Misaligned layers, on the other hand, behave like graphene. Angular misorientations of a few degrees were found to cause large increases in the conductance of the top layer, with the maximum occurring around 30°. These results suggest new applications for graphene multilayers by stacking layers at various angles to control the resistance of the connected graphene ribbons in devices.

  17. A novel method of fabricating laminated silicone stack actuators with pre-strained dielectric layers

    NASA Astrophysics Data System (ADS)

    Hinitt, Andrew D.; Conn, Andrew T.

    2014-03-01

    In recent studies, stack based Dielectric Elastomer Actuators (DEAs) have been successfully used in haptic feedback and sensing applications. However, limitations in the fabrication method, and materials used to con- struct stack actuators constrain their force and displacement output per unit volume. This paper focuses on a fabrication process enabling a stacked elastomer actuator to withstand the high tensile forces needed for high power applications, such as mimetics for mammalian muscle contraction (i.e prostheses), whilst requiring low voltage for thickness-mode contractile actuation. Spun elastomer layers are bonded together in a pre-strained state using a conductive adhesive filler, forming a Laminated Inter-Penetrating Network (L-IPN) with repeatable and uniform electrode thickness. The resulting structure utilises the stored strain energy of the dielectric elas- tomer to compress the cured electrode composite material. The method is used to fabricate an L-IPN example, which demonstrated that the bonded L-IPN has high tensile strength normal to the lamination. Additionally, the uniformity and retained dielectric layer pre-strain of the L-IPN are confirmed. The described method is envisaged to be used in a semi-automated assembly of large-scale multi-layer stacks of pre-strained dielectric layers possessing a tensile strength in the range generated by mammalian muscle.

  18. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

    NASA Astrophysics Data System (ADS)

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C. S. Suchand; Feng, Yuan Ping; Nijhuis, Christian A.; Loh, Kian Ping

    2014-11-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films.

  19. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers.

    PubMed

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C S Suchand; Feng, Yuan Ping; Nijhuis, Christian A; Loh, Kian Ping

    2014-11-20

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films.

  20. Stacking Structures of Few-Layer Graphene Revealed by Phase-Sensitive Infrared Nanoscopy.

    PubMed

    Kim, Deok-Soo; Kwon, Hyuksang; Nikitin, Alexey Yu; Ahn, Seongjin; Martín-Moreno, Luis; García-Vidal, Francisco J; Ryu, Sunmin; Min, Hongki; Kim, Zee Hwan

    2015-07-28

    The stacking orders in few-layer graphene (FLG) strongly influences the electronic properties of the material. To explore the stacking-specific properties of FLG in detail, one needs powerful microscopy techniques that visualize stacking domains with sufficient spatial resolution. We demonstrate that infrared (IR) scattering scanning near-field optical microscopy (sSNOM) directly maps out the stacking domains of FLG with a nanometric resolution, based on the stacking-specific IR conductivities of FLG. The intensity and phase contrasts of sSNOM are compared with the sSNOM contrast model, which is based on the dipolar tip-sample coupling and the theoretical conductivity spectra of FLG, allowing a clear assignment of each FLG domain as Bernal, rhombohedral, or intermediate stacks for tri-, tetra-, and pentalayer graphene. The method offers 10-100 times better spatial resolution than the far-field Raman and infrared spectroscopic methods, yet it allows far more experimental flexibility than the scanning tunneling microscopy and electron microscopy.

  1. Coloration of the Chilean Bellflower, Nolana paradoxa, interpreted with a scattering and absorbing layer stack model.

    PubMed

    Stavenga, Doekele G; van der Kooi, Casper J

    2016-01-01

    An absorbing-layer-stack model allows quantitative analysis of the light flux in flowers and the resulting reflectance spectra. It provides insight in how plants can optimize their flower coloration for attracting pollinators. The coloration of flowers is due to the combined effect of pigments and light-scattering structures. To interpret flower coloration, we applied an optical model that considers a flower as a stack of layers, where each layer can be treated with the Kubelka-Munk theory for diffusely scattering and absorbing media. We applied our model to the flowers of the Chilean Bellflower, Nolana paradoxa, which have distinctly different-colored adaxial and abaxial sides. We found that the flowers have a pigmented, strongly scattering upper layer, in combination with an unpigmented, moderately reflecting lower layer. The model allowed quantitative interpretation of the reflectance and transmittance spectra measured with an integrating sphere. The absorbance spectrum of the pigment measured with a microspectrophotometer confirmed the spectrum derived by modeling. We discuss how different pigment localizations yield different reflectance spectra. The absorbing layer stack model aids in understanding the various constraints and options for plants to tune their coloration.

  2. Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy

    DOE PAGES

    Lu, Xin; Utama, M. Iqbal Bakti; Lin, Junhao; ...

    2015-07-02

    Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.

  3. Layer-by-layer paper-stacking nanofibrous membranes to deliver adipose-derived stem cells for bone regeneration.

    PubMed

    Wan, Wenbing; Zhang, Shiwen; Ge, Liangpeng; Li, Qingtao; Fang, Xingxing; Yuan, Quan; Zhong, Wen; Ouyang, Jun; Xing, Malcolm

    2015-01-01

    Bone tissue engineering through seeding of stem cells in three-dimensional scaffolds has greatly improved bone regeneration technology, which historically has been a constant challenge. In this study, we researched the use of adipose-derived stem cell (ADSC)-laden layer-by-layer paper-stacking polycaprolactone/gelatin electrospinning nanofibrous membranes for bone regeneration. Using this novel paper-stacking method makes oxygen distribution, nutrition, and waste transportation work more efficiently. ADSCs can also secrete multiple growth factors required for osteogenesis. After the characterization of ADSC surface markers CD29, CD90, and CD49d using flow cytometry, we seeded ADSCs on the membranes and found cells differentiated, with significant expression of the osteogenic-related proteins osteopontin, osteocalcin, and osteoprotegerin. During 4 weeks in vitro, the ADSCs cultured on the paper-stacking membranes in the osteogenic medium exhibited the highest osteogenic-related gene expressions. In vivo, the paper-stacking scaffolds were implanted into the rat calvarial defects (5 mm diameter, one defect per parietal bone) for 12 weeks. Investigating with microcomputer tomography, the ADSC-laden paper-stacking membranes showed the most significant bone reconstruction, and from a morphological perspective, this group occupied 90% of the surface area of the defect, produced the highest bone regeneration volume, and showed the highest bone mineral density of 823.06 mg/cm(3). From hematoxylin and eosin and Masson staining, the new bone tissue was most evident in the ADSC-laden scaffold group. Using quantitative polymerase chain reaction analysis from collected tissues, we found that the ADSC-laden paper-stacking membrane group presented the highest osteogenic-related gene expressions of osteocalcin, osteopontin, osteoprotegerin, bone sialoprotein, runt-related transcription factor 2, and osterix (two to three times higher than the control group, and 1.5 times higher

  4. Biaxially textured metal substrate with palladium layer

    DOEpatents

    Robbins, William B [Maplewood, MN

    2002-12-31

    Described is an article comprising a biaxially textured metal substrate and a layer of palladium deposited on at least one major surface of the metal substrate; wherein the palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations.

  5. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  6. Impact of the Stack Order in Cu-Zn-Sn Metal Precursors on the Properties of Cu2ZnSnS4 Thin Films

    SciTech Connect

    Abusnina, Mohamed; Matin, Mohammad; Moutinho, Helio; Al-Jassim, Mowafak

    2015-06-14

    Cu2ZnSnS4 (CZTS) thin films were grown by the annealing of metallic precursors with different stack orders in sulfur atmosphere. The sequential deposition of the metal layers from single Cu, Zn, and Sn targets on Mo-coated soda-lime glass substrates was carried out using radio-frequency magnetron sputtering. In this work, we investigated the effect of the sequence of metal layers on the chemical, structural, and morphological properties of the final CZTS films using X-ray fluorescence (XRF), X-ray diffraction (XRD), Raman scattering spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy. The realized stack sequences were Mo/Sn/Zn/Cu, Mo/Sn/Cu/Zn, Mo/Cu/Zn/Sn, Mo/Cu/Sn/Zn, and Mo/Zn/Cu/Sn. XRF measurements revealed notable impact of the metal layers' stacking order in the precursor on the chemical composition. It also showed Sn loss and high Zn concentration in all sulfurized films; however, having Cu on the Sn or Zn/Sn layer showed some minimization of the Sn loss. XRD showed CZTS films with good crystallinity and no evidence of the presence of secondary phases. Changing the precursor stack order did not show any influence on the films' crystallinity or texture. Raman spectroscopy, in contrast, indicated the presence of ZnS phase beside the main CZTS phase. The morphology study showed significant effect on the structure of the final CZTS films depending on the used stack order. Generally, the films that originated from precursors having a Zn layer deposited directly on Mo or as the second layer exhibited better adhesion to the Mo layer and showed fewer or even no voids compared to the other films.

  7. Ceramic TBS/porous metal compliant layer

    NASA Technical Reports Server (NTRS)

    Tolokan, Robert P.; Jarrabet, G. P.

    1992-01-01

    Technetics Corporation manufactures metal fiber materials and components used in aerospace applications. Our technology base is fiber metal porous sheet material made from sinter bonded metal fibers. Fiber metals have percent densities (metal content by volume) from 10 to 65 percent. Various topics are covered and include the following: fiber metal materials, compliant layer thermal bayer coatings (TBC's), pad properties, ceramic/pad TBC design, thermal shock rig, fabrication, and applications.

  8. Oxidation behavior of metallic interconnect in solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    Li, Jun; Zhang, Wenying; Yang, Jiajun; Yan, Dong; Pu, Jian; Chi, Bo; Jian, Li

    2017-06-01

    Oxidation behavior of integrated interconnect with bipolar plate and corrugated sheet made by ferrite steel SUS430 is investigated and compared in simulated environment and in a realistic stack. Electrical current is found to have a direction-related impact on the thickness of the Cr2O3/MnCr2O4 composite oxide scale. Oxide scale of the interconnect aged in the stack exhibits a dual-layered structure of a complex Mn-Cr oxide layer covered by iron oxide. The oxidation rates vary greatly depending on its local environment, with different thermal, electrical density, as well as gas composition conditions. By analyzing the thickness distribution of oxide scale and comparing them with the simulated test result, the oxidation behavior of interconnect in stack is described in high definition. ASR distribution is also conducted by calculation, which could help further understanding the behavior of stack degradation.

  9. Method for disclosing invisible physical properties in metal-ferroelectric-insulator-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Sakai, Shigeki; Zhang, Wei; Takahashi, Mitsue

    2017-04-01

    In metal-ferroelectric-insulator-semiconductor gate stacks of ferroelectric-gate field effect transistors (FeFETs), it is impossible to directly obtain curves of polarization versus electric field (P f-E f) in the ferroelectric layer. The P f-E f behavior is not simple, i.e. the P f-E f curves are hysteretic and nonlinear, and the hysteresis curve width depends on the electric field scan amplitude. Unless the P f-E f relation is known, the field E f strength cannot be solved when the voltage is applied between the gate meal and the semiconductor substrate, and thus P f-E f cannot be obtained after all. In this paper, the method for disclosing the relationships among the polarization peak-to-peak amplitude (2P mm_av), the electric field peak-to-peak amplitude (2E mm_av), and the memory window (E w) in units of the electric field is presented. To get P mm_av versus E mm_av, FeFETs with different ferroelectric-layer thicknesses should be prepared. Knowing such essential physical parameters is helpful and in many cases enough to quantitatively understand the behavior of FeFETs. The method is applied to three groups. The first one consists of SrBi2Ta2O9-based FeFETs. The second and third ones consist of Ca x Sr1-x Bi2Ta2O9-based FeFETs made by two kinds of annealing. The method can clearly differentiate the characters of the three groups. By applying the method, ferroelectric relationships among P mm_av, E mm_av, and E w are well classified in the three groups according to the difference of the material kinds and the annealing conditions. The method also evaluates equivalent oxide thickness (EOT) of a dual layer of a deposited high-k insulator and a thermally-grown SiO2-like interfacial layer (IL). The IL thickness calculated by the method is consistent with cross-sectional image of the FeFETs observed by a transmission electron microscope. The method successfully discloses individual characteristics of the ferroelectric and the insulator layers hidden in the gate stack

  10. Direct Free Carrier Photogeneration in Single Layer and Stacked Organic Photovoltaic Devices.

    PubMed

    Chandran, Hrisheekesh Thachoth; Ng, Tsz-Wai; Foo, Yishu; Li, Ho-Wa; Qing, Jian; Liu, Xiao-Ke; Chan, Chiu-Yee; Wong, Fu-Lung; Zapien, Juan Antonio; Tsang, Sai-Wing; Lo, Ming-Fai; Lee, Chun-Sing

    2017-04-03

    High performance organic photovoltaic devices typically rely on type-II P/N junctions for assisting exciton dissociation. Heremans and co-workers recently reported a high efficiency device with a third organic layer which is spatially separated from the active P/N junction; but still contributes to the carrier generation by passing its energy to the P/N junction via a long-range exciton energy transfer mechanism. In this study the authors show that there is an additional mechanism contributing to the high efficiency. Some bipolar materials (e.g., subnaphthalocyanine chloride (SubNc) and subphthalocyanine chloride (SubPc)) are observed to generate free carriers much more effectively than typical organic semiconductors upon photoexcitation. Single-layer devices with SubNc or SubPc sandwiched between two electrodes can give power conversion efficiencies 30 times higher than those of reported single-layer devices. In addition, internal quantum efficiencies (IQEs) of bilayer devices with opposite stacking sequences (i.e., SubNc/SubPc vs SubPc/SubNc) are found to be the sum of IQEs of single layer devices. These results confirm that SubNc and SubPc can directly generate free carriers upon photoexcitation without assistance from a P/N junction. These allow them to be stacked onto each other with reversible sequence or simply stacking onto another P/N junction and contribute to the photocarrier generation.

  11. Amorphous Si waveguides with high-quality stacked gratings for multi-layer Si optical circuits

    NASA Astrophysics Data System (ADS)

    Tokushige, H.; Endo, T.; Saiki, K.; Hiidome, K.; Kitamura, S.; Katsuyama, T.; Tokuda, M.; Takagi, H.; Morita, M.; Ito, Y.; Tsutsui, K.; Wada, Y.; Ikeda, N.; Sugimoto, Y.

    2014-11-01

    To realize a stacked multi-layer silicon-based photonic device, a waveguide with a stacked grating was fabricated by using amorphous Si (a-Si) material, which is suitable for constructing layered structures. The fabrication method was based on forming a flat a-Si layer on a non-flat structure by using only spin-on-glass (SOG) coating technique. The a-Si grating was precisely constructed on the a-Si waveguide with gold alignment marks for electron beam lithography. Transmitted and reflected light power dependence on the grating period, wavelength, and polarization was systematically measured and compared with the designed dependence. As a result, the reflected light power exhibited a characteristic peak structure at a particular wavelength. Remarkable transverse electric/transverse magnetic (TE/TM) mode dependence was also observed. Furthermore, the measured and the designed properties were in excellent agreement with each other. Consequently, the designed structure was well reproduced in the actual stacked structure based on the a-Si material. These results pave the way for novel a-Si based integrated photonic devices such as polarization selectors and wavelength filters, indicating that a-Si is an excellent material for implementing Si-based multi-layer optical circuits.

  12. Removal of stacking-fault tetrahedra by twin boundaries in nanotwinned metals.

    PubMed

    Yu, K Y; Bufford, D; Sun, C; Liu, Y; Wang, H; Kirk, M A; Li, M; Zhang, X

    2013-01-01

    Stacking-fault tetrahedra are detrimental defects in neutron- or proton-irradiated structural metals with face-centered cubic structures. Their removal is very challenging and typically requires annealing at very high temperatures, incorporation of interstitials or interaction with mobile dislocations. Here we present an alternative solution to remove stacking-fault tetrahedra discovered during room temperature, in situ Kr ion irradiation of epitaxial nanotwinned Ag with an average twin spacing of ~8 nm. A large number of stacking-fault tetrahedra were removed during their interactions with abundant coherent twin boundaries. Consequently the density of stacking-fault tetrahedra in irradiated nanotwinned Ag was much lower than that in its bulk counterpart. Two fundamental interaction mechanisms were identified, and compared with predictions by molecular dynamics simulations. In situ studies also revealed a new phenomenon: radiation-induced frequent migration of coherent and incoherent twin boundaries. Potential migration mechanisms are discussed.

  13. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    PubMed Central

    Al-Amri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%. PMID:27339612

  14. Kondo screening and spin excitation in few-layer CoPc molecular assembly stacking on Pb(111) surface: A DFT+HEOM study

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Zheng, Xiao; Yang, Jinlong

    2016-10-01

    Transition metal phthalocyanine molecules adsorbed on a metal substrate exhibit rich spin-related phenomena such as magnetic anisotropy, spin excitation, and Kondo effect. In this work, we investigate theoretically few-layer cobalt phthalocyanine (CoPc) molecular assembly stacking on Pb(111) surface with the use of a combined density functional theory (DFT) and hierarchical equations of motion (HEOM) approach. Calculation results indicate that the local spin properties of CoPc/Pb(111) composites depend critically on the number of adsorption layers. The first layer of CoPc on the Pb(111) surface serves as a spin-insulating buffer, while the CoPc molecules in the second layer exhibit spin-1/2 Kondo effect with a Kondo temperature of about 22 K. In a triple-layer CoPc assembly stacking on Pb(111), the antiferromagnetic coupling between the second and third layers leads to local spin-flip excitations under finite bias voltages, which gives rise to characteristic signatures in the differential conductance spectra. The DFT+HEOM approach thus provides a practical means for investigating the local electronic and spin properties of two-dimensional molecular assemblies adsorbed on the metal surface. The insights obtained from the first-principles based simulations could be useful for experimental manipulation or design of magnetic composite systems.

  15. A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Ritter, Dan; Eizenberg, Moshe

    2016-02-01

    Thermal activated atomic layer deposited (t) (ALD) and plasma enhanced (p) ALD (PEALD) AlN films were investigated for gate applications of InGaAs based metal-insulator-semiconductor devices and compared to the well-known Al2O3 based system. The roles of post-metallization annealing (PMA) and the pre-deposition treatment (PDT) by either trimethylaluminium (TMA) or NH3 were studied. In contrast to the case of Al2O3, in the case of AlN, the annealing temperature reduced interface states density. In addition, improvement of the AlN film stoichiometry and a related border traps density reduction were observed following PMA. The lowest interface states density (among the investigated gate stacks) was found for PEALD AlN/InGaAs stacks after TMA PDT. At the same time, higher values of the dispersion in accumulation were observed for AlN/InGaAs gate stacks compared to those with Al2O3 dielectric. No indium out-diffusion and the related leakage current degradation due to annealing were observed at the AlN/InGaAs stack. In light of these findings, we conclude that AlN is a promising material for InGaAs based gate stack applications.

  16. Study of stacked-emitter layer for high efficiency amorphous/crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Youngseok; Kim, Heewon; Iftiquar, S. M.; Kim, Sunbo; Kim, Sangho; Ahn, Shihyun; Lee, Youn-Jung; Dao, Vinh Ai; Yi, Junsin

    2014-12-01

    A modified emitter, of stacked two layer structure, was investigated for high-efficiency amorphous/crystalline silicon heterojunction (HJ) solar cells. Surface area of the cells was 181.5 cm2. The emitter was designed to achieve a high open circuit voltage (Voc) and fill factor (FF). When doping of the emitter layer was increased, it was observed that the silicon dihydride related structural defects within the films increased, and the Voc of the HJ cell decreased. On the other hand, while the doping concentration of the emitter was reduced the FF of the cell reduced. Therefore, a combination of a high conductivity and low defects of a single emitter layer appears difficult to obtain, yet becomes necessary to improve the cell performance. So, we investigated a stacked-emitter with low-doped/high-doped double layer structure. A low-doped emitter with reduced defect density was deposited over the intrinsic hydrogenated amorphous silicon passivation layer, while the high-doped emitter with high conductivity was deposited over the low-doped emitter. The effects of doping and defect density of the emitter, on the device performance, were elucidated by using computer simulation and an optimized device structure was formulated. The simulation was performed with the help of Automat for the Simulation of Heterostructures simulation software. Finally, based on the simulation results, amorphous/crystalline heterojunction silicon solar cells were optimized by reducing density of defect states in the stacked-emitter structure and we obtained 725 mV, 77.41%, and 19.0% as the open-circuit voltage, fill factor, and photo-voltaic conversion efficiency of the device, respectively.

  17. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

    SciTech Connect

    Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; Eres, Gyula; Timpe, Olaf; Fu, Qiang; Ding, Feng; Willinger, Marc-Georg; Schloegl, R.

    2016-10-19

    In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

  18. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    PubMed

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  19. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

    NASA Astrophysics Data System (ADS)

    Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; Eres, Gyula; Timpe, Olaf; Fu, Qiang; Ding, Feng; Schloegl, R.; Willinger, Marc-Georg

    2016-10-01

    In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

  20. <110> symmetric tilt grain-boundary structures in fcc metals with low stacking-fault energies

    NASA Astrophysics Data System (ADS)

    Rittner, J. D.; Seidman, D. N.

    1996-09-01

    Twenty-one <110> symmetric tilt grain boundaries (GB's) are investigated with atomistic simulations, using an embedded-atom method (EAM) potential for a low stacking-fault energy fcc metal. Lattice statics simulations with a large number of initial configurations are used to identify both the equilibrium and metastable structures at 0 K. The level of difficulty in finding the equilibrium structures is quantitatively assessed. The stability of the structures at an elevated temperature is investigated by Monte Carlo annealing. A form of GB dissociation is identified in a number of the boundaries. These structures are used to develop a dislocation model of GB dissociation by stacking-fault emission. Also, an attempt is made to apply the structural unit model (SUM) to the simulated boundaries and problems that are encountered for GB structures in low stacking-fault energy metals are enumerated and discussed.

  1. Visual offline sample stacking via moving neutralization boundary electrophoresis for analysis of heavy metal ion.

    PubMed

    Fan, Yinping; Li, Shan; Fan, Liuyin; Cao, Chengxi

    2012-06-15

    In this paper, a moving neutralization boundary (MNB) electrophoresis is developed as a novel model of visual offline sample stacking for the trace analysis of heavy metal ions (HMIs). In the stacking system, the cathodic-direction motion MNB is designed with 1.95-2.8mM HCl+98 mM KCl in phase alfa and 4.0mM NaOH+96 mM KCl in phase beta. If a little of HMI is present in phase alfa, the metal ion electrically migrates towards the MNB and react with hydroxyl ion, producing precipitation and moving precipitation boundary (MPB). The alkaline precipitation is neutralized by hydrogen ion, leading to a moving eluting boundary (MEB), release of HMI from its precipitation, circle of HMI from the MEB to the MPB, and highly efficient visual stacking. As a proof of concept, a set of metal ions (Cu(II), Co(II), Mn(II), Pb(II) and Cr(III)) were chosen as the model HMIs and capillary electrophoresis (CE) was selected as an analytical tool for the experiments demonstrating the feasibility of MNB-based stacking. As shown in this paper, (i) the visual stacking model was manifested by the experiments; (ii) there was a controllable stacking of HMI in the MNB system; (iii) the offline stacking could achieve higher than 123 fold preconcentration; and (iv) the five HMIs were simultaneously stacked via the developed stacking technique for the trace analyses with the limits of detection (LOD): 3.67×10(-3) (Cu(II)), 1.67×10(-3) (Co(II), 4.17×10(-3) (Mn(II)), 4.6×10(-4) (Pb(II)) and 8.40×10(-4)mM (Cr(III)). Even the off-line stacking was demonstrated for the use of CE-based HMI analysis, it has potential applications in atomic absorption spectroscopy (AAS), inductively coupled plasma-mass spectrometry (ICP-MS) and ion chromatography (IC) etc. Copyright © 2012 Elsevier B.V. All rights reserved.

  2. CHARACTERIZATION OF POLED SINGLE-LAYER PZT FOR PIEZO STACK IN FUEL INJECTION SYSTEM

    SciTech Connect

    Wang, Hong; Matsunaga, Tadashi; Lin, Hua-Tay

    2010-01-01

    Poled single-layer PZT has been characterized in as-extracted and as-received states. PZT plate specimens in the former were extracted from a stack. Flexure strength of PZT was evaluated by using ball-on-ring and 4-point bend tests. Fractography showed that intergranular fractures dominated the fracture surface and that volume pores were the primary strength-limiting flaws. The electric field effect was investigated by testing the PZT in open circuit and coercive field levels. An asymmetrical response on the biaxial flexure strength with respect to the electric field direction was observed. These experimental results will assist reliability design of the piezo stack that is being considered in fuel injection system.

  3. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

    NASA Astrophysics Data System (ADS)

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H.; Khondaker, Saiful I.; Choi, Wonbong; Jung, Yeonwoong

    2016-05-01

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  4. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    PubMed

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-05-05

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  5. Optical properties of a stack of cholesteric liquid crystal and isotropic medium layers

    SciTech Connect

    Gevorgyan, A. H.

    2015-12-15

    Some new optical properties of a stack consisting of cholesteric liquid crystal (CLC) and isotropic medium layers are studied. The problem is solved by the modified Ambartsumyan method for the summation of layers. Bragg conditions for the photonic band gaps of the proposed system are presented. It is shown that the choice of proper sublayer parameters can be used to control the band structure of the system. In the general case, the effect of full suppression of absorption, which is observed in a finite homogeneous CLC layer, is not detected in the presence of anisotropic absorption in CLC sublayers. It is shown that this effect can be generated in the system under study if certain conditions are imposed on the isotropic sublayer thickness. Under these conditions, the maximum photonic density of states (PDS) increases significantly at the boundaries of the corresponding band. The influence of a change in the CLC sublayer thickness and the system thickness on PDS is investigated.

  6. Optical properties of a stack of cholesteric liquid crystal and isotropic medium layers

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.

    2015-12-01

    Some new optical properties of a stack consisting of cholesteric liquid crystal (CLC) and isotropic medium layers are studied. The problem is solved by the modified Ambartsumyan method for the summation of layers. Bragg conditions for the photonic band gaps of the proposed system are presented. It is shown that the choice of proper sublayer parameters can be used to control the band structure of the system. In the general case, the effect of full suppression of absorption, which is observed in a finite homogeneous CLC layer, is not detected in the presence of anisotropic absorption in CLC sublayers. It is shown that this effect can be generated in the system under study if certain conditions are imposed on the isotropic sublayer thickness. Under these conditions, the maximum photonic density of states (PDS) increases significantly at the boundaries of the corresponding band. The influence of a change in the CLC sublayer thickness and the system thickness on PDS is investigated.

  7. Integration of Metallic Nanostructures in Fluidic Channels for Fluorescence and Raman Enhancement by Nanoimprint Lithography and Lift-off on Compositional Resist Stack

    PubMed Central

    Wang, Chao; Chou, Stephen Y.

    2012-01-01

    We present and demonstrate a novel fabrication method to integrate metallic nanostructures into fluidic systems, using nanoimprint lithography and lift-off on a compositional resist stack, which consists of multi-layers of SiO2 and polymer patterned from different fabrication steps. The lift-off of the stack allows the final nano-features precisely aligned in the proper locations inside fluidic channels. The method provides high-throughput low-cost patterning and compatibility with various fluidic channel designs, and will be useful for fluorescence and Raman scattering enhancement in nano-fluidic systems. PMID:23175593

  8. Simple solution route to uniform MoS{sub 2} particles with randomly stacked layers

    SciTech Connect

    Li Qing; Li Ming; Chen Zhiqian; Li Chunmei

    2004-06-08

    MoS{sub 2} particles of uniform size (ca. 70 nm) consisting of random and loosely stacked layers have been synthesized from hydrazine solution with (NH{sub 4}){sub 2}Mo{sub 3}S{sub 13} as the precursor at 180 deg. C for 16 h under hydrothermal conditions. The particles were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HREM). The influences of reaction conditions are discussed while a mechanism is proposed to explain the formation of this peculiar morphology.

  9. Limitations of H- κ stacking: ambiguous results caused by crustal layering

    NASA Astrophysics Data System (ADS)

    Wölbern, I.; Rümpker, G.

    2017-01-01

    Over the past decade, the H- κ stacking technique of Zhu and Kanamori (J Geophys Res 105:2969-2980, 2000) has become a standard tool to determine the crustal thickness H and the bulk crustal vP/vS ratio κ from teleseismic receiver functions. It is obvious that unfavorable noise conditions as well as a complex 3D velocity structure can severely hamper the interpretation of receiver-function data. However, we observe that ambiguities can even arise from a simple 1D layered velocity structure which raises a high potential for misinterpretations. To analyze the feasibility and basic limitations of the H- κ stacking method, we conduct a series of tests based on synthetic data. The impact of different given elementary parameters, related either to the velocity structure or to the data processing, is evaluated in a series of eight individual tests. We deliberately exclude complications such as 3D structural variations and/or noise to show that even a simple 1D velocity structure, involving, e.g., an additional inter-crustal discontinuity, can have significant consequences for the interpretation of the results. However, our modeling suggests that more complex crustal structures may lead to even less reliable results. Additionally, our tests illustrate that time shifts of the maxima in the H- κ domain due to the superposition and merging of individual phases can lead to significantly overestimated vP/vS ratios. In general, the depth to the Moho (or other discontinuities of interest) is less significantly affected. Our tests indicate the necessity to accurately check delay times derived from the maxima of the H- κ stacks against corresponding phases in the receiver functions. Repeating the stacking with varied weighting factors and filter ranges can help to reduce the ambiguities and to avoid possible misinterpretation.

  10. Long- and Short-Range Constraints for the Structure Determination of Layered Silicates with Stacking Disorder

    SciTech Connect

    Cadars, Sylvian; Allix, mathieu; Brouwer, Darren H.; Shayib, Ramzy; Suchomel, Matthew; Garaga, Mounesha N.; Rakhmatullin, Aydar; Burton, Allen W.; Zones, Stacy I.; Massiot, Dominique; Chmelka, Bradley F.

    2014-12-23

    Layered silicates have important applications as host materials, supports for catalysis, and zeolite precursors. However, their local structures are often challenging to establish due to disorder of the sheet assemblies. We present a new protocol that combines long- and short-range structural constraints from diffraction and solid-state NMR techniques, respectively, to determine the molecular structure of layered silicates in the presence of various extents of stacking disorder. Solid-state 29Si NMR data are largely insensitive to the incomplete extent of three-dimensional (3D) crystallinity that limits the interpretation of diffraction data alone to the identification of possible unit cells and space groups. State-of-the-art NMR crystallography techniques consequently provide a simplified view of materials from which candidate framework structures can be built and evaluated based on local structural constraints, including interatomic distances, Si site numbers and multiplicities, and Si–O–Si connectivities, and refined using density functional theory. This protocol was applied to a new layered silicate material named CLS-1, of composition [Si5O11H][C9N2H15]·1.9(H2O), synthesized by using a fluoride-based protocol and cationic alkylaminopyridinium as a structure-directing agent (SDA). Despite the intrinsic complexity and partial ordering of the intersheet arrangements and organic–inorganic interactions, this led to the identification of a single space group that is compatible with both NMR and diffraction data, from which the silicate framework structure could be established,. The remarkable similarities between the layered framework structures of CLS-1, HUS-2 (Tsunoji et al. J. Mater. Chem.2012, 22, 13682), and another layered silicate material with a radically different morphology and extent of stacking order and interlayer dynamics, established by using a similar approach (Brouwer et al. J. Am. Chem. Soc.2013, 135, 5641), point to the remarkable

  11. Supramolecular self-assembly of graphene oxide and metal nanoparticles into stacked multilayers by means of a multitasking protein ring

    NASA Astrophysics Data System (ADS)

    Ardini, Matteo; Golia, Giordana; Passaretti, Paolo; Cimini, Annamaria; Pitari, Giuseppina; Giansanti, Francesco; Leandro, Luana Di; Ottaviano, Luca; Perrozzi, Francesco; Santucci, Sandro; Morandi, Vittorio; Ortolani, Luca; Christian, Meganne; Treossi, Emanuele; Palermo, Vincenzo; Angelucci, Francesco; Ippoliti, Rodolfo

    2016-03-01

    Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the ``double-faced'' Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml-1. Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its lumen. This feature is exploited to both capture presynthesized gold nanoparticles and grow in situ palladium nanoparticles paving the way to straightforward and ``green'' routes to 3D reduced GO-metal composite materials.Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the ``double-faced'' Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml-1. Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its

  12. Microscopic theoretical model study of band gap opening in AA-stacked bi-layer graphene

    SciTech Connect

    Sahu, Sivabrata Parashar, S. K. S.; Rout, G. C.

    2016-05-06

    We address here a tight-binding theoretical model calculation for AA-stacked bi-layer graphene taking into account of a biased potential between two layers to study the density of states and the band dispersion within the total Brillouin zone. We have calculated the electronic Green’s function for electron operator corresponding to A and B sub lattices by Zubarev’s Green’s function technique from which the electronic density of states and the electron band energy dispersion are calculated. The numerically computed density of states and band energy dispersions are investigated by tuning the biased potential to exhibit the band gap by varying the different physical parameters.

  13. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

    NASA Astrophysics Data System (ADS)

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Ying Quek, Su

    2015-10-01

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.

  14. Multifrequency parallelized near-field optical imaging with anistropic metal-dielectric stacks

    SciTech Connect

    Elsayad, K.; Heinze, K. G.

    2010-05-15

    Metal-dielectric stacks can be designed to support resonant transmission modes for certain evanescent field components of an incident electromagnetic field. Here we show that when combined with an appropriate subwavelength pitch grating the amplified Fourier components coincide with different diffraction orders at different frequencies. It thereby becomes possible to collect a wide range of evanescent Fourier components by performing measurements at different optical frequencies. For a typical anisotropic metal-dielectric stack, we find that for a source emitting at wavelengths 400-500 nm, imaging with a resolution of {approx_equal}20 nm becomes possible. Although the reconstructed image contains ringing effects due to gaps in the measured Fourier spectrum, the final resolution achievable is a significant improvement over other fast near-field imaging techniques. The presented technique may find applications in fast super-resolution surface imaging of objects that emit over a wider optical frequency range.

  15. Basic criteria for formation of growth twins in high stacking fault energy metals

    NASA Astrophysics Data System (ADS)

    Yu, K. Y.; Bufford, D.; Chen, Y.; Liu, Y.; Wang, H.; Zhang, X.

    2013-10-01

    Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, {111} textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system.

  16. Basic criteria for formation of growth twins in high stacking fault energy metals

    SciTech Connect

    Yu, K. Y.; Zhang, X.; Bufford, D.; Chen, Y.; Liu, Y.; Wang, H.

    2013-10-28

    Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, (111) textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system.

  17. Shear deformation, ideal strength, and stacking fault formation of fcc metals: A density-functional study of Al and Cu

    NASA Astrophysics Data System (ADS)

    Jahnátek, Michal; Hafner, Jürgen; Krajčí, Marián

    2009-06-01

    Ab initio density-functional calculations have been used to study the response of two face-centered-cubic metals (Al and Cu) to shearing parallel to the close-packed (111) planes along two different directions, [112¯] and [1¯10] . Two different types of deformations—affine and alias—have been investigated. Under an affine shear deformation, all atoms are shifted parallel to the shearing direction by a distance proportional to their distance from the fixed basal plane. In the alias regime, only the top layer is displaced in the shearing direction. In both regimes, calculations have been performed with (pure shear) and without (simple shear) relaxation. For a pure alias shear, due to the interaction between the atoms, the displacement propagates through the sample; this is certainly the most realistic description of the shearing processes. In the pure alias regime, shear deformation, theoretical shear strength, and stacking fault formations may be described on a common footing. For small strains (in the elastic region), affine and alias shears lead to very similar results. Beyond the elastic limit, relaxation has a strong influence of the response on an applied shear strain. The elastic shear moduli are significantly larger for Cu than for Al, but a much higher shear strength is calculated for Al, although the shear strength is limited by the occurrence of a stacking fault instability before the stress maximum is reached. Under ⟨1¯10⟩ {111} shear the analysis of the atomistic deformation mechanism shows that in this case the formation of a stacking fault leads to a splitting of the (1)/(2)[1¯10] dislocation into two partial Shockley dislocations. Due to the repulsive interaction between the atoms in adjacent close-packed planes, the atoms in the top A layer move along (1)/(6)[2¯11] to a position directly above the B layer such that the stable intrinsic stacking fault configuration is the same for both slip systems. The analysis of the variation in the

  18. High performance nickel-metal hydride battery in bipolar stack design

    NASA Astrophysics Data System (ADS)

    Ohms, D.; Kohlhase, M.; Benczúr-Ürmössy, G.; Wiesener, K.; Harmel, J.

    The consumption of fuel in cars can be reduced by using hybrid concepts. Even for fuel cell vehicles, a high power battery may cut costs and allow the recovery of energy during retarding. Alkaline batteries, such as nickel-metal hydride batteries, have displayed long cycle life combined with high power ability. In order to improve the power/energy ratio of Ni/MH to even higher values, the cells may be arranged in a bipolar stack design.

  19. Molecular dynamics simulations on deformation and fracture of bi-layer graphene with different stacking pattern under tension

    NASA Astrophysics Data System (ADS)

    Jiao, M. D.; Wang, L.; Wang, C. Y.; Zhang, Q.; Ye, S. Y.; Wang, F. Y.

    2016-02-01

    Based on AIREBO (Adaptive Intermolecular Reactive Empirical Bond Order) potential, molecular dynamics simulations (MDs) are performed to study the mechanical behavior of AB- and AA-stacked bi-layer graphene films (BGFs) under tension. Stress-strain relationship is established and deformation mechanism is investigated via morphology analysis. It is found that AA-stacked BGFs show wavy folds, i.e. the structural instability, and the local structure of AB-stacked BGFs transforms into AA-stacked ones during free relaxation. The values of the Young's modulus obtained for AA-stacked zigzag and armchair BGFs are 797.2 GPa and 727.4 GPa, and those of their AB-stacked counterparts are 646.7 GPa and 603.5 GPa, respectively. In comparison with single-layer graphene, low anisotropy is observed for BGFs, especially AB-stacked ones. During the tensile deformation, hexagonal cells at the edge of BGFs are found to transform into pentagonal rings and the number of such defects increases with the rise of tensile strain.

  20. Controlled assembly of layer-by-layer stacking continuous graphene oxide films and their application for actively modulated field electron emission cathodes.

    PubMed

    Huang, Yuan; She, Juncong; Yang, Wenjie; Deng, Shaozhi; Xu, Ningsheng

    2014-04-21

    A featured "vapor transportation" assembly technique was developed to attain layer-by-layer stacking continuous graphene oxide (GO) films on both flat and concavo-concave surfaces. Few-layer (layer number < 10) GO sheets were "evaporated" (carried by water vapor) from the water-dispersed GO suspension and smoothly/uniformly tiled on the substrate surface. We have found evidence of the influence of the deposition time and substrate-liquid separation on the film thickness. A model was proposed for interpreting the assembly process. It was found that a current conditioning would induce a reduction of the GO surface and form an Ohmic contact between the GO-metal interfaces. Accordingly, an actively modulated GO cold cathode was fabricated by locally depositing continuous GO sheets on the drain electrode of a metal-oxide-semiconductor field effect transistor (MOSFET). The field emission current of the GO cathode can be precisely controlled by the MOSFET gate voltage (VGS). A current modulation range from 1 × 10(-10) A to 6.9 × 10(-6) A (4 orders of magnitude) was achieved by tuning the VGS from 0.812 V to 1.728 V. Due to the self-acting positive feedback of the MOSFET, the emission current fluctuation was dramatically reduced from 57.4% (non-control) to 3.4% (controlled). Furthermore, the integrated GO cathode was employed for a lab-prototype display pixel application demonstrating the active modulation of the phosphor luminance, i.e. from 0.01 cd m(-2) to 34.18 cd m(-2).

  1. Controlled assembly of layer-by-layer stacking continuous graphene oxide films and their application for actively modulated field electron emission cathodes

    NASA Astrophysics Data System (ADS)

    Huang, Yuan; She, Juncong; Yang, Wenjie; Deng, Shaozhi; Xu, Ningsheng

    2014-03-01

    A featured ``vapor transportation'' assembly technique was developed to attain layer-by-layer stacking continuous graphene oxide (GO) films on both flat and concavo-concave surfaces. Few-layer (layer number < 10) GO sheets were ``evaporated'' (carried by water vapor) from the water-dispersed GO suspension and smoothly/uniformly tiled on the substrate surface. We have found evidence of the influence of the deposition time and substrate-liquid separation on the film thickness. A model was proposed for interpreting the assembly process. It was found that a current conditioning would induce a reduction of the GO surface and form an Ohmic contact between the GO-metal interfaces. Accordingly, an actively modulated GO cold cathode was fabricated by locally depositing continuous GO sheets on the drain electrode of a metal-oxide-semiconductor field effect transistor (MOSFET). The field emission current of the GO cathode can be precisely controlled by the MOSFET gate voltage (VGS). A current modulation range from 1 × 10-10 A to 6.9 × 10-6 A (4 orders of magnitude) was achieved by tuning the VGS from 0.812 V to 1.728 V. Due to the self-acting positive feedback of the MOSFET, the emission current fluctuation was dramatically reduced from 57.4% (non-control) to 3.4% (controlled). Furthermore, the integrated GO cathode was employed for a lab-prototype display pixel application demonstrating the active modulation of the phosphor luminance, i.e. from 0.01 cd m-2 to 34.18 cd m-2.

  2. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

    PubMed Central

    Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; Eres, Gyula; Timpe, Olaf; Fu, Qiang; Ding, Feng; Schloegl, R.; Willinger, Marc-Georg

    2016-01-01

    In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene–graphene and graphene–substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite. PMID:27759024

  3. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

    DOE PAGES

    Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; ...

    2016-10-19

    In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy andmore » density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.« less

  4. Double-trap model for hysteretic current-voltage characteristics of a polystyrene/ZnO nanorods stacked layer

    NASA Astrophysics Data System (ADS)

    Wu, You-Lin; Lin, Jing-Jenn; Lin, Shih-Hung; Sung, Yi-Hsing

    2017-11-01

    Hysteretic current-voltage (I-V) characteristics are quite common in metal-insulator-metal (MIM) devices used for resistive switching random access memory (RRAM). Two types of hysteretic I-V curves are usually observed, figure eight and counter figure eight (counter-clockwise and clockwise in the positive voltage sweep direction, respectively). In this work, a clockwise hysteretic I-V curve was found for an MIM device with polystyrene (PS)/ZnO nanorods stack as an insulator layer. Three distinct regions I ∼ V, I ∼ V2, and I ∼ V0.6 are observed in the double logarithmic plot of the I-V curves, which cannot be explained completely with the conventional trap-controlled space-charge-limited-current (SCLC) model. A model based on the energy band with two separate traps plus local energy variation and trap-controlled SCLC has been developed, which can successfully describe the behavior of the clockwise hysteretic I-V characteristics obtained in this work.

  5. Controlling Optical Properties of Electrodes With Stacked Metallic Thin Films for Polymeric Light-Emitting Diodes and Displays

    NASA Astrophysics Data System (ADS)

    Wu, Elbert Hsing-En; Li, Sheng-Han; Chen, Chieh-Wei; Li, Gang; Xu, Zheng; Yang, Yang

    2005-09-01

    A semi-transparent metallic film and a high optical absorbing film were constructed with stacking metallic films. Both films were used as cathodes for polymeric light-emitting diodes (PLEDs). The semi-transparent film was made of gold/aluminum/gold thin multilayers with its optical transparency of the device reaches as high as ~70% in the visible region without capping layer, and the electrical sheet resistance reduces below 10 Omega/square. During illumination of the PLED, there was approximately 47% of light emitting from the top of the cathode surface, and 53% of light from the ITO side. The high optical absorbing film, also refer to as the black cathode, was constructed with four alternating layers of aluminum-silver, each aluminum or silver layer is 4 nm thick. The PLED with this black cathode demonstrated 126% enhancement of contrast under 1000 lx ambient illumination. The physical properties of these two cathodes were characterized by current-voltage measurement and atomic force microscopy. Ultraviolet-visible transmission spectroscopy and X-ray photoemission spectroscopy were also used to characterize the semi-transparent cathode and the black cathode respectively. For polymer light-emitting device,it is believed that morphology modification at each interface of the cathode plays a crucial role in determining the optical properties and conductivity of the over cathode.

  6. Supramolecular self-assembly of graphene oxide and metal nanoparticles into stacked multilayers by means of a multitasking protein ring.

    PubMed

    Ardini, Matteo; Golia, Giordana; Passaretti, Paolo; Cimini, Annamaria; Pitari, Giuseppina; Giansanti, Francesco; Di Leandro, Luana; Ottaviano, Luca; Perrozzi, Francesco; Santucci, Sandro; Morandi, Vittorio; Ortolani, Luca; Christian, Meganne; Treossi, Emanuele; Palermo, Vincenzo; Angelucci, Francesco; Ippoliti, Rodolfo

    2016-03-28

    Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the "double-faced" Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml(-1). Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its lumen. This feature is exploited to both capture presynthesized gold nanoparticles and grow in situ palladium nanoparticles paving the way to straightforward and "green" routes to 3D reduced GO-metal composite materials.

  7. Paleointensity determination of welded tuffs extruded with tephra layers: A new approach to calibration of relative paleointensity stacks

    NASA Astrophysics Data System (ADS)

    Mochizuki, N.; Fujii, S.; Hasegawa, T.; Yamamoto, Y.; Hatakeyama, T.; Okada, M.; Shibuya, H.

    2015-12-01

    For a reliable calibration of a relative paleointensity stack, we proposed a new method for direct comparison of absolute paleointensities (APIs) with relative paleointensities (RPIs) (Mochizuki et al., under review). In the analysis, APIs are directly compared with the RPIs of a RPI stack at six stratigraphic levels: three levels are based on tephrostratigraphic correlations between welded tuffs and corresponding tephra layers in the oxygen isotope stratigraphy, and the other three levels are based on paleomagnetic correlations between RPI minima and transitional geomagnetic fields. In the present study, to increase API data with tephrostratigraphic correlation, we applied the LTD-DHT Shaw paleointensity method (Tsunakawa-Shaw method) to 21 welded tuffs in Japan extruded with widespread tephra layers. We obtained mean paleointensities for 16 of the 21 welded tuffs. Since nine of the 16 welded tuffs were correlated with the tephras recognized in the oxygen isotope stratigraphy, they can be added to the API data used in the direct comparison method. Combining these API data with the reported data, we compared API data with RPIs from the PISO-1500 stack and SINT-800 stack at the 14 stratigraphic levels: eleven levels are based on tephrostratigraphic correlation and the other three levels are based on paleomagnetic correlation. RPIs of the PISO-1500 stack showed a linear relationship with the virtual axial dipole moments (VADMs) calculated from the APIs, indicating that the PISO-1500 stack has a linear relation to the axial dipole moment. PRIs from the SINT-800 stack also have a linear-like trend with the VADMs. This direct comparison method can clarify the relationship between APIs and RPIs of a RPI stack, and thus provide a reliable calibration of the RPI stack to absolute values.

  8. Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET

    NASA Astrophysics Data System (ADS)

    Gupta, Neha; Chaujar, Rishu

    2016-09-01

    This work optimizes the gate engineering scheme (both gate stack and gate metal workfunction engineering) of Stacked Gate (SG) Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire MOSFET at 300 K for improved analog and intermodulation performance. This has been done by evaluating and analyzing the metrics such as Switching Ratio, Subthreshold Swing (SS), Device Efficiency, channel and output resistance, VIP3, IIP3, 1-dB Compression Point, IMD3, HD2 and HD3. Simulation results exhibit that HfO2 as a gate stack exhibit high linearity at a comparatively low gate bias of 0.56 V with higher IIP3 (6.21 dBm) and low IMD3 (9.6 dBm). Further, the characteristics/performance is modulated by adjusting the workfunction difference of metal gate. This study demonstrates that SiNW MOSFET modeled with HfO2 as a gate stack over SiO2 interfacial layer, and gate metal workfunction difference (ΔW) of 4.4 eV can be considered as a promising potential for low power switching component in ICs and Linear RF amplifiers.

  9. Quantum theory for the nanoscale propagation of light through stacked thin film layers

    NASA Astrophysics Data System (ADS)

    Forbes, Kayn A.; Williams, Mathew D.; Andrews, David L.

    2016-04-01

    Stacked multi-layer films have a range of well-known applications as optical elements. The various types of theory commonly used to describe optical propagation through such structures rarely take account of the quantum nature of light, though phenomena such as Anderson localization can be proven to occur under suitable conditions. In recent and ongoing work based on quantum electrodynamics, it has been shown possible to rigorously reformulate, in photonic terms, the fundamental mechanisms that are involved in reflection and optical transmission through stacked nanolayers. Accounting for sum-over-pathway features in the quantum mechanical description, this theory treats the sequential interactions of photons with material boundaries in terms of individual scattering events. The study entertains an arbitrary number of reflections in systems comprising two or three internally reflective surfaces. Analytical results are secured, without recourse to FTDT (finite-difference time-domain) software or any other finite-element approximations. Quantum interference effects can be readily identified. The new results, which cast the optical characteristics of such structures in terms of simple, constituent-determined properties, are illustrated by model calculations.

  10. Effects of stable and unstable stacking fault energy on dislocation nucleation in nano-crystalline metals

    NASA Astrophysics Data System (ADS)

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.

    2016-12-01

    Dislocation nucleation from grain boundaries (GB) can control plastic deformation in nano-crystalline metals under certain conditions, but little is known about what controls dislocation nucleation, because when data from different materials are compared, the variations of many interacting properties tend to obscure the effects of any single property. In this study, we seek clarification by applying a unique capability of semi-empirical potentials in molecular dynamics simulations: the potentials can be modified such that all significant material properties but one, are kept constant. Using a set of potentials developed to isolate the effects of stacking fault energy, we show that for a given grain boundary, loading orientation and strain rate, the yield stress depends linearly on both the stable and unstable stacking fault energies. The coefficients of proportionality depend on the GB structure and the value of the yield stress is related to the density of the E structural units in the GB. While the impact of the stable stacking fault energy is easy to understand, the unstable stacking fault energy requires more elucidation and we provide a framework for understanding how it affects the nucleation and propagation process.

  11. Antireflective Coatings: Conventional Stacking Layers and Ultrathin Plasmonic Metasurfaces, A Mini-Review

    PubMed Central

    Keshavarz Hedayati, Mehdi; Elbahri, Mady

    2016-01-01

    Reduction of unwanted light reflection from a surface of a substance is very essential for improvement of the performance of optical and photonic devices. Antireflective coatings (ARCs) made of single or stacking layers of dielectrics, nano/microstructures or a mixture of both are the conventional design geometry for suppression of reflection. Recent progress in theoretical nanophotonics and nanofabrication has enabled more flexibility in design and fabrication of miniaturized coatings which has in turn advanced the field of ARCs considerably. In particular, the emergence of plasmonic and metasurfaces allows for the realization of broadband and angular-insensitive ARC coatings at an order of magnitude thinner than the operational wavelengths. In this review, a short overview of the development of ARCs, with particular attention paid to the state-of-the-art plasmonic- and metasurface-based antireflective surfaces, is presented. PMID:28773620

  12. Blocking force of a piezoelectric stack actuator made of single crystal layers (PMN-29PT)

    NASA Astrophysics Data System (ADS)

    Tran, K. S.; Phan, H. V.; Lee, H. Y.; Kim, Yongdae; Park, H. C.

    2016-09-01

    In this study, we fabricated and characterized a stack actuator made of forty layers of 1 mm thick PMN-29PT with a cross-sectional area of 10 × 10 mm2. From the measurement of actuation displacement, we confirmed that the piezoelectric strain constant in the direction of thickness of the material is 2000 pm V-1, as suggested by the manufacturer. The blocking forces of the actuator are measured to be 230 N, 369 N, and 478 N for 100 V, 200 V, and 300 V, respectively. The measured blocking forces showed large discrepancies from the estimated blocking forces calculated using linear models, especially for a high voltage application. An empirical equation acquired by fitting the measured blocking forces indicates that the blocking force has a nonlinear relationship with the applied voltage. The measured hysteresis showed a slight nonlinear voltage-stroke relationship and small energy loss.

  13. Clinical characterization of a proton beam continuous uniform scanning system with dose layer stacking

    SciTech Connect

    Farr, J. B.; Mascia, A. E.; Hsi, W.-C.; Allgower, C. E.; Jesseph, F.; Schreuder, A. N.; Wolanski, M.; Nichiporov, D. F.; Anferov, V.

    2008-11-15

    A proton beam delivery system on a gantry with continuous uniform scanning and dose layer stacking at the Midwest Proton Radiotherapy Institute has been commissioned and accepted for clinical use. This paper was motivated by a lack of guidance on the testing and characterization for clinical uniform scanning systems. As such, it describes how these tasks were performed with a uniform scanning beam delivery system. This paper reports the methods used and important dosimetric characteristics of radiation fields produced by the system. The commissioning data include the transverse and longitudinal dose distributions, penumbra, and absolute dose values. Using a 208 MeV cyclotron's proton beam, the system provides field sizes up to 20 and 30 cm in diameter for proton ranges in water up to 27 and 20 cm, respectively. The dose layer stacking method allows for the flexible construction of spread-out Bragg peaks with uniform modulation of up to 15 cm in water, at typical dose rates of 1-3 Gy/min. For measuring relative dose distributions, multielement ion chamber arrays, small-volume ion chambers, and radiographic films were employed. Measurements during the clinical commissioning of the system have shown that the lateral and longitudinal dose uniformity of 2.5% or better can be achieved for all clinically important field sizes and ranges. The measured transverse penumbra widths offer a slight improvement in comparison to those achieved with a double scattering beam spreading technique at the facility. Absolute dose measurements were done using calibrated ion chambers, thermoluminescent and alanine detectors. Dose intercomparisons conducted using various types of detectors traceable to a national standards laboratory indicate that the measured dosimetry data agree with each other within 5%.

  14. Sliding behavior of oil droplets on nanosphere stacking layers with different surface textures

    NASA Astrophysics Data System (ADS)

    Hsieh, Chien-Te; Wu, Fang-Lin; Chen, Wei-Yu

    2010-09-01

    Two facile coating techniques, gravitational sediment and spin coating, were applied for the creation of silica sphere stacking layers with different textures onto glass substrates that display various sliding abilities toward liquid drops with different surface tensions, ranged from 25.6 to 72.3 mN/m. The resulting silica surface exhibits oil repellency, long-period durability > 30 days, and oil sliding capability. The two-tier texture offers a better roll-off ability toward liquid drops with a wide range of γL, ranged from 30.2 to 72.3 mN/m, i.e., when the sliding angle (SA) < 15°, the oil droplet start to roll off the surface. This improvement of sliding ability can be ascribed to the fact that the two-tier texture allows for air pockets (i.e., referred to as the Cassie state), thus favoring the self-cleaning ability. Taking Young-Duprè equation into account, a linearity relationship between sine SA and work of adhesion ( Wad) appears to describe the sliding behavior within the Wad region: 2.20-3.03 mN/m. The smaller Wad, the easier drop sliding (i.e., the smaller SA value) takes place on the surfaces. The Wad value ˜3.03 mN/m shows a critical kinetic barrier for drop sliding on the silica surfaces from stationary to movement states. This work proposes a mathematical model to simulate the sliding behavior of oil drops on a nanosphere stacking layer, confirming the anti-oil contamination capability.

  15. Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack

    NASA Astrophysics Data System (ADS)

    Zheng, X. H.; Huang, A. P.; Xiao, Z. S.; Wang, M.; Liu, X. Y.; Wu, Z. W.; Chu, Paul K.

    2011-09-01

    The diffusion behavior and interlayer interactions in the LaN/AlN dual capping layers of TiN/LaN/AlN/HfSiOx/Si stacks are investigated. Depth profiling and chemical state analysis performed after partial removal of the TiN gate indicate that Al-O replaces Al-N forming an Al-O dipole layer between the TiN and high-k layer after annealing. Meanwhile, La diffuses into HfSiOx and the La-based dipole is controlled by suppression of O diffusion to the bottom layer. Our results reveal that the properties of the TiN/LaN/AlN/HfSiOx/Si stack can be improved significantly by the dual capping layers.

  16. Operation of Thin-Film Electrolyte Metal-Supported Solid Oxide Fuel Cells in Lightweight and Stationary Stacks: Material and Microstructural Aspects

    PubMed Central

    Roehrens, Daniel; Packbier, Ute; Fang, Qingping; Blum, Ludger; Sebold, Doris; Bram, Martin; Menzler, Norbert

    2016-01-01

    In this study we report on the development and operational data of a metal-supported solid oxide fuel cell with a thin film electrolyte under varying conditions. The metal-ceramic structure was developed for a mobile auxiliary power unit and offers power densities of 1 W/cm2 at 800 °C, as well as robustness under mechanical, thermal and chemical stresses. A dense and thin yttria-doped zirconia layer was applied to a nanoporous nickel/zirconia anode using a scalable adapted gas-flow sputter process, which allowed the homogeneous coating of areas up to 100 cm2. The cell performance is presented for single cells and for stack operation, both in lightweight and stationary stack designs. The results from short-term operation indicate that this cell technology may be a very suitable alternative for mobile applications. PMID:28773883

  17. Operation of Thin-Film Electrolyte Metal-Supported Solid Oxide Fuel Cells in Lightweight and Stationary Stacks: Material and Microstructural Aspects.

    PubMed

    Roehrens, Daniel; Packbier, Ute; Fang, Qingping; Blum, Ludger; Sebold, Doris; Bram, Martin; Menzler, Norbert

    2016-09-08

    In this study we report on the development and operational data of a metal-supported solid oxide fuel cell with a thin film electrolyte under varying conditions. The metal-ceramic structure was developed for a mobile auxiliary power unit and offers power densities of 1 W/cm² at 800 °C, as well as robustness under mechanical, thermal and chemical stresses. A dense and thin yttria-doped zirconia layer was applied to a nanoporous nickel/zirconia anode using a scalable adapted gas-flow sputter process, which allowed the homogeneous coating of areas up to 100 cm². The cell performance is presented for single cells and for stack operation, both in lightweight and stationary stack designs. The results from short-term operation indicate that this cell technology may be a very suitable alternative for mobile applications.

  18. Buffer layers on biaxially textured metal substrates

    DOEpatents

    Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

    2001-01-01

    A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

  19. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    PubMed

    Khan, Z N; Ahmed, S; Ali, M

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  20. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

    PubMed Central

    Khan, Z. N.; Ahmed, S.; Ali, M.

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

  1. Interaction of metal layers with polycrystalline Si

    NASA Technical Reports Server (NTRS)

    Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

    1976-01-01

    Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

  2. GO-induced assembly of gelatin toward stacked layer-like porous carbon for advanced supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaomeng; Jiao, Yanqing; Sun, Li; Wang, Lei; Wu, Aiping; Yan, Haijing; Meng, Meichen; Tian, Chungui; Jiang, Baojiang; Fu, Honggang

    2016-01-01

    Layer-like nanocarbons with high surface area and good conductivity are promising materials for supercapacitors due to their good ability for effective charge-transfer and mass-transfer. In this paper, stacked layer-like porous carbon containing RGO (reduced graphene oxides) (LPCG) was constructed via the GO-induced assembly of gelatin followed by carbonization and activation processes. Under suitable conditions, LPCG-based materials with a thickness of about 100 nm and a high specific surface area (up to 1476 m2 g-1) could be obtained. In the materials, the closed combination of RGO and porous carbon can be observed, which is favourable for the development of the synergistic effects of both components. The presence of GO can not only enhance the conductivity of LPCG-based materials, but also is essential for the formation of a thin carbon sheet with a stacked structure. Otherwise, the plate-like, non-stacked carbon with a thickness of about 500 nm could be formed in the absence of RGO. The porous structure along with the presence of RGO allows rapid charge-transfer and easy access and diffusion of electrolyte ions. As a result, the materials exhibited a high discharge specific capacitance (455 F g-1 at 0.5 A g-1, 366 F g-1 at 1 A g-1), good rate capability (221 F g-1 at density 30 A g-1) and good cycling stability. In aqueous electrolytes, the energy density could be up to 9.32 W h kg-1 at a relatively low power density of 500 W kg-1 with a good cycling stability (>96% over 5000 cycles). It was found that (1) the rational combination of RGO and porous carbon is essential for enhancing the capacitance performance and improving the cycling stability and (2) the high conductivity is favorable for improving the rate performance of the materials. The LPCG-based materials have extensive potential for practical applications in energy storage and conversion devices.Layer-like nanocarbons with high surface area and good conductivity are promising materials for

  3. Photoluminescence quenching and charge transfer in artificial heterostacks of monolayer transition metal dichalcogenides and few-layer black phosphorus.

    PubMed

    Yuan, Jiangtan; Najmaei, Sina; Zhang, Zhuhua; Zhang, Jing; Lei, Sidong; M Ajayan, Pulickel; Yakobson, Boris I; Lou, Jun

    2015-01-27

    Transition metal dichalcogenides monolayers and black phosphorus thin crystals are emerging two-dimensional materials that demonstrated extraordinary optoelectronic properties. Exotic properties and physics may arise when atomic layers of different materials are stacked together to form van der Waals solids. Understanding the important interlayer couplings in such heterostructures could provide avenues for control and creation of characteristics in these artificial stacks. Here we systematically investigate the optical and optoelectronic properties of artificial stacks of molybdenum disulfide, tungsten disulfide, and black phosphorus atomic layers. An anomalous photoluminescence quenching was observed in tungsten disulfide-molybdenum disulfide stacks. This was attributed to a direct to indirect band gap transition of tungsten disulfide in such stacks while molybdenum disulfide maintains its monolayer properties by first-principles calculations. On the other hand, due to the strong build-in electric fields in tungsten disulfide-black phosphorus or molybdenum disulfide-black phosphorus stacks, the excitons can be efficiently splitted despite both the component layers having a direct band gap in these stacks. We further examine optoelectronic properties of tungsten disulfide-molybdenum disulfide artificial stacks and demonstrate their great potentials in future optoelectronic applications.

  4. Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers

    NASA Astrophysics Data System (ADS)

    Bogdanov, Nikolay A.; Katukuri, Vamshi M.; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu

    2015-06-01

    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g||-factors less than 2 for positive tetragonal distortions as present in Sr2IrO4, the experiment indicates g|| is greater than 2. This implies that the iridium d levels are inverted with respect to their normal ordering. State-of-the-art electronic-structure calculations confirm the level switching in Sr2IrO4, whereas we find them in Ba2IrO4 to be instead normally ordered. Given the nonpolar character of the metal-oxygen layers, our findings highlight the tetravalent transition-metal 214 oxides as ideal platforms to explore d-orbital reconstruction in the context of oxide electronics.

  5. Molecular dynamics simulation on generalized stacking fault energies of FCC metals under preloading stress

    NASA Astrophysics Data System (ADS)

    Zhang, Liang; Cheng, Lü; Kiet, Tieu; Zhao, Xing; Pei, Lin-Qing; Guillaume, Michal

    2015-08-01

    Molecular dynamics (MD) simulations are performed to investigate the effects of stress on generalized stacking fault (GSF) energy of three fcc metals (Cu, Al, and Ni). The simulation model is deformed by uniaxial tension or compression in each of [111], [11-2], and [1-10] directions, respectively, before shifting the lattice to calculate the GSF curve. Simulation results show that the values of unstable stacking fault energy (γusf), stable stacking fault energy (γsf), and unstable twin fault energy (γutf) of the three elements can change with the preloaded tensile or compressive stress in different directions. The ratio of γsf/γusf, which is related to the energy barrier for full dislocation nucleation, and the ratio of γutf/γusf, which is related to the energy barrier for twinning formation are plotted each as a function of the preloading stress. The results of this study reveal that the stress state can change the energy barrier of defect nucleation in the crystal lattice, and thereby can play an important role in the deformation mechanism of nanocrystalline material. Project supported by Australia Research Council Discovery Projects (Grant No. DP130103973). L. Zhang, X. Zhao and L. Q. Pei were financially supported by the China Scholarship Council (CSC).

  6. Structure change, layer sliding, and metallization in high-pressure MoS2

    NASA Astrophysics Data System (ADS)

    Tosatti, Erio; Hromadova, Liliana; Martonak, Roman

    2013-03-01

    Based on ab initio calculations and metadynamics simulations, we predict that 2H-MoS2, a layered insulator, will metallize under pressures in excess of 20-30 GPa. In the same pressure range, simulations and enthalpy optimization predict a structural transition. Reminiscent of this material's frictional properties, free mutual sliding of layers takes place at this transition, where the original 2Hc stacking changes to a 2Ha stacking typical of 2H-NbSe2, a transformation which explains for the first time previously mysterious X-ray diffraction data. Phonon and electron phonon calculations suggest that metallic pristine MoS2 will require ultrahigh pressures in order to develop superconductivity. Supported by EU-Japan Project LEMSUPER, by a SNF Sinergia Project, and by the Slovak Research and Development Agency

  7. Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-11-07

    A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scaling to 0.5 nm is also demonstrated based on these understandings.

  8. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M.; Das, Gangadhar

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  9. Design of wide-angle solar-selective absorbers using aperiodic metal-dielectric stacks.

    PubMed

    Sergeant, Nicholas P; Pincon, Olivier; Agrawal, Mukul; Peumans, Peter

    2009-12-07

    Spectral control of the emissivity of surfaces is essential in applications such as solar thermal and thermophotovoltaic energy conversion in order to achieve the highest conversion efficiencies possible. We investigated the spectral performance of planar aperiodic metal-dielectric multilayer coatings for these applications. The response of the coatings was optimized for a target operational temperature using needle-optimization based on a transfer matrix approach. Excellent spectral selectivity was achieved over a wide angular range. These aperiodic metal-dielectric stacks have the potential to significantly increase the efficiency of thermophotovoltaic and solar thermal conversion systems. Optimal coatings for concentrated solar thermal conversion were modeled to have a thermal emissivity <7% at 720K while absorbing >94% of the incident light. In addition, optimized coatings for solar thermophotovoltaic applications were modeled to have thermal emissivity <16% at 1750K while absorbing >85% of the concentrated solar radiation.

  10. Effects of stacking fault energy on defect formation process in face-centered cubic metals

    NASA Astrophysics Data System (ADS)

    Okita, Taira; Yang, Yingjuan; Hirabayashi, Junichi; Itakura, Mitsuhiro; Suzuki, Katsuyuki

    2016-05-01

    To elucidate the effect of stacking fault energies (SFEs) on defect formation by the collision cascade process for face-centred cubic metals, we used six sets of interatomic potentials with different SFEs while keeping the other properties almost identical. Molecular dynamic simulations of the collision cascade were carried out using these potentials with primary knock-on atom energies (EPKA) of 10 and 20 keV at 100 K. Neither the number of residual defects nor the size distributions for both self-interstitial atom (SIA) type and vacancy type clusters were affected by the difference in the SFE. In the case of EPKA = 20 keV, the ratio of glissile SIA clusters increased as the SFE decreased, which was not expected by a prediction based on the classical dislocation theory. The trend did not change after annealing at 1100 K for 100 ps. For vacancy clusters, few stacking fault tetrahedrons (SFTs) formed before the annealing. However, lower SFEs tended to increase the SFT fraction after the annealing, where large vacancy clusters formed at considerable densities. The findings of this study can be used to characterise the defect formation process in low SFE metals such as austenitic stainless steels.

  11. Optical Tamm states above the bulk plasma frequency at a Bragg stack/metal interface

    NASA Astrophysics Data System (ADS)

    Brand, S.; Kaliteevski, M. A.; Abram, R. A.

    2009-02-01

    We demonstrate theoretically that surface-plasmon polaritons, a form of optical Tamm state, can occur at the interface between a metal and a Bragg reflector at frequencies above the bulk plasma frequency of the metal. The frequencies of the excitations are within the photonic band gap of the Bragg reflector which provides the required evanescent decay on that side of the interface. At finite in-plane wave vector, the low value of the permittivity of the metal above its plasma frequency can lead to an imaginary normal wave vector component in the metal, which provides the localization on the other side of the interface. It is proposed that the necessary conditions can be realized using a GaAs/AlAs Bragg stack coated with a suitable conducting metal oxide having a bulk plasma frequency of 1 eV, but the concept is valid for other systems given an appropriate plasma frequency and photonic band-gap structure. The dispersion relations of the plasmon polaritons in the structures considered are calculated for both possible polarizations, and it is shown how the excitations result in distinct features in the predicted reflectivity spectra.

  12. Advanced atom chips with two metal layers.

    SciTech Connect

    Stevens, James E.; Blain, Matthew Glenn; Benito, Francisco M.; Biedermann, Grant

    2010-12-01

    A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

  13. Resonant frequency and hysteresis of a stack actuator made of single crystal (PMN-29PT) layers

    NASA Astrophysics Data System (ADS)

    Tran, K. S.; Lee, H. Y.; Kim, Y.; Park, H. C.

    2016-12-01

    In this study, we have presented the dynamic behavior of a piezoelectric stack actuator made of forty layers of single-crystal (PMN-29PT) with an area of 10 × 10 mm2 and thickness of 1 mm. To conduct a dynamic test of the actuator, we built a test apparatus with dummy weights that was placed over the top of the actuator to measure the actuation displacement. The resonant frequencies of the actuator with and without the dummy weight were determined as the excitation frequencies where a significant increase in the actuation displacement could be observed. We also proposed an analytical multi-degree-of-freedom (MDOF) model of the actuator to analytically predict the resonant frequency. Finite element analyses were conducted to validate the analytically predicted and measured resonant frequencies. With no dummy weight, the resonant frequency of the actuator was measured at 730.00 Hz, which was 0.70% higher than the one calculated by the MDOF model and 0.10% smaller than that of the finite element model. With a dummy weight, the measured resonant frequency was lower than 730.00 Hz and close enough to those computed by the MDOF model and the finite element model. The hysteresis curves of the actuator at various frequencies indicated that the actuator might incur a small energy loss.

  14. Synthesis and characterization of petal type CZTS by stacked layer reactive sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Om Pal; Parmar, R.; Gour, K. S.; Dalai, M. K.; Tawale, Jai; Singh, S. P.; Singh, Vidya Nand

    2015-12-01

    Here we present a method to grow the petal type structure of CZTS thin film on soda lime glass substrate using the stacked layer reactive sputtering and post-depostion annealing in N2 atmosphere. Optical bandgap of the petal type structure of CZTS was determined using UV-VIS spectroscopy and the value was 1.5 eV. In XRD analysis, (112) plane having highest intensity and other supporting planes with low intensity peaks corresponding to (200), (220) and (312) revealed the presence of CZTS phase. It was further confirmed by the Raman analysis, where the Raman peaks at 288 cm-1, 335 cm-1 and 353 cm-1 revealed the presence of CZTS phase. Petal type growth was observed in the scanning electron microscopy analysis. Elemental analysis was done by the EDAX. In EDAX analysis, It is observed that sample was Sn rich which may be responsible for petal type growth. Petal type growth of CZTS may be helpful in increasing the performance of the CZTS based thin film solar cell by phenomena of light scattering and enhanced surface area.

  15. Stacking faults on (001) in transition-metal disilicides with the C11{sub b} structure

    SciTech Connect

    Ito, K.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

    1997-12-31

    Stacking faults on (001) in MoSi{sub 2} and WSi{sub 2} with the C11{sub b} structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi{sub 2} contains a high density of stacking faults, only several faults are observed in MoSi{sub 2}. For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R = 1/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 {+-} 0.10 and 3.34 {+-} 0.10 for MoSi{sub 2} and WSi{sub 2}, respectively.

  16. Water tank experiment of gas diffusion from a stack in stably and unstably stratified layers under calm conditions

    NASA Astrophysics Data System (ADS)

    Ohba, R.; Kakishima, S.; Ito, S.

    Water tank experiments were conducted to investigate plume rrise and diffusion of gases discharged from a stack under calm conditions with stable and unstable thermal stratifications. First, tracer liquid with fluorescent dye and salt was emitted from a model of a stack in a stably stratified layer and the behavior of a plume was recorded by video camera. Using these results. we obtained formulae for plume rise height, and horizontal and vertical width of a plume as a function of thedensimetric Froude number, stability ratio and time. After the completion of these experiments under stable conditions, an unstably stratified layer was developed from a ground surface by heating a floor and the resulting concentration distribution was measured with electric conductivity probes. Using these results, we analyzed the height of the convection layer and concentration distribution as a function of the overall Richardson number and time.

  17. [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

    NASA Astrophysics Data System (ADS)

    Liu, E.; Swerts, J.; Couet, S.; Mertens, S.; Tomczak, Y.; Lin, T.; Spampinato, V.; Franquet, A.; Van Elshocht, S.; Kar, G.; Furnemont, A.; De Boeck, J.

    2016-03-01

    Alternative free layer materials with high perpendicular anisotropy are researched to provide spin-transfer-torque magnetic random access memory stacks' sufficient thermal stability at critical dimensions of 20 nm and below. We demonstrate a high tunnel magetoresistance (TMR) MgO-based magnetic tunnel junction stack with a hybrid free layer design made of a [Co/Ni] multilayer and CoFeB. The seed material on which the [Co/Ni] multilayer is deposited determines its switching characteristics. When deposited on a Pt seed layer, soft magnetic switching behavior with high squareness is obtained. When deposited on a NiCr seed, the perpendicular anisotropy remains high, but the squareness is low and coercivity exceeds 1000 Oe. Interdiffusion of the seed material with the [Co/Ni] multilayers is found to be responsible for the different switching characteristics. In optimized stacks, a TMR of 165% and low resistance-area (RA) product of 7.0 Ω μm2 are attained for free layers with an effective perpendicular magnetic anisotropy energy of 1.25 erg/cm2, which suggests that the hybrid free layer materials may be a viable candidate for high density magnetic random access memory applications.

  18. Comparison of the Ti/TiN/AlCu/TiN stack with TiN/AlCu/Ti/TiN stack for application in ULSI metallization

    NASA Astrophysics Data System (ADS)

    Menon, Satish S.; Choudhury, Ratan K.

    1996-09-01

    The relative advantages and disadvantages of the two ULSI metallization stacks viz., Ti/TiN/AlCu/TiN and TiN/AlCu/Ti/TiN are described. The electromigration and thermal stability characteristics are compared using grain size of the Al metal, the XRD rocking curve peak and FWHM of the Al (111) orientation, SWEAT lifetime and electrical characteristics before and after thermal cycling of the test structures. In the literature, there exists work that report an improvement in the electromigration lifetime in the situation where Ti is in direct contact with Al due to the formation of TiAl3. The results for submicron dimensions presented in this paper clearly point to very important requirements for those results to hold and highlight the danger in assuming its validity for submicron lines. The W- plug via schemes resulting from use of both these metallization stacks will be compared from both the electrical and reliability standpoint. The conflict arising between the functionality and reliability of the vias with the reliability of the metallization lines is discussed.

  19. Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

    NASA Astrophysics Data System (ADS)

    Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

    2016-09-01

    Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

  20. Tailoring the magnetic anisotropy of CoFeB/MgO stacks onto W with a Ta buffer layer

    NASA Astrophysics Data System (ADS)

    Kaidatzis, Andreas; Bran, Cristina; Psycharis, Vasilios; Vázquez, Manuel; García-Martín, José Miguel; Niarchos, Dimitrios

    2015-06-01

    The emergence of perpendicular magnetic anisotropy (PMA) in CoFeB/MgO stacks deposited on W using a Ta buffer layer is studied as a function of Ta and CoFeB layer thickness and annealing temperature. It is shown that very thin Ta "dusting" layers (thickness between 0.3 and 1 nm) enhance PMA of CoFeB layers grown on top of W. We find that Ta thickness is a crucial factor affecting magnetic anisotropy and it needs to be scaled proportionally to CoFeB thickness for obtaining PMA. Stacks without Ta have in-plane anisotropy, verifying the "PMA-enhancing" role of Ta. The maximum effective PMA energy ( 3.6 ×106 erg/cm3) is obtained for a stack with 1.4 nm of CoFeB and 1 nm of Ta and after annealing at 350 °C . Besides, PMA can be obtained even at the as-deposited state for certain thicknesses. This W-based CoFeB/MgO system could enable the development of low power consumption, high density, and non-volatile magnetic memories.

  1. Zone structure and polarization properties of the stack of a metamaterial-based cholesteric liquid crystal and isotropic medium layers

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.; Matinyan, G. K.

    2014-05-01

    The optical properties of a stack of metamaterial-based cholesteric liquid crystal (CLC) layers and isotropic medium layers are investigated. The problem is solved by a modification of Ambartsumian's layer addition method. CLCs with two types of chiral nihility are defined. The peculiarities of the reflection spectra of this system are investigated and it is shown that the reflection spectra of the stacks of CLC layers of these two types differ from each other. Besides, in contrast to the single CLC layer case, these systems have multiple photonic band gaps. There are two types of such gaps: those selective with respect to polarization of the incident light and nonselective ones. It is shown that the system eigenpolarizations mainly coincide with the quasi-orthogonal, quasi-circular polarizations for normally incident light, except the regions of diffraction reflection selective with respect to the polarization of incident light. The influence of the CLC sublayer thick-nesses, the incidence angle, the local dielectric (magnetic) anisotropy of the CLC layers, and the refractive indices and thicknesses of the isotropic media layers on the reflection spectra and other optical characteristics of the system is investigated.

  2. Photovoltaic device having light transmitting electrically conductive stacked films

    DOEpatents

    Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

    1990-07-10

    A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

  3. Tight-binding study of stacking fault energies and the Rice criterion of ductility in the fcc metals

    NASA Astrophysics Data System (ADS)

    Mehl, Michael J.; Papaconstantopoulos, Dimitrios A.; Kioussis, Nicholas; Herbranson, M.

    2000-02-01

    We have used the Naval Research Laboratory (NRL) tight-binding (TB) method to calculate the generalized stacking fault energy and the Rice ductility criterion in the fcc metals Al, Cu, Rh, Pd, Ag, Ir, Pt, Au, and Pb. The method works well for all classes of metals, i.e., simple metals, noble metals, and transition metals. We compared our results with full potential linear-muffin-tin orbital and embedded atom method (EAM) calculations, as well as experiment, and found good agreement. This is impressive, since the NRL-TB approach only fits to first-principles full-potential linearized augmented plane-wave equations of state and band structures for cubic systems. Comparable accuracy with EAM potentials can be achieved only by fitting to the stacking fault energy.

  4. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

    PubMed Central

    2014-01-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

  5. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

    NASA Astrophysics Data System (ADS)

    Yao, Liyong; Ao, Jianping; Jeng, Ming-Jer; Bi, Jinlian; Gao, Shoushuai; He, Qing; Zhou, Zhiqiang; Sun, Guozhong; Sun, Yun; Chang, Liann-Be; Chen, Jian-Wun

    2014-12-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.

  6. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.

    PubMed

    Yao, Liyong; Ao, Jianping; Jeng, Ming-Jer; Bi, Jinlian; Gao, Shoushuai; He, Qing; Zhou, Zhiqiang; Sun, Guozhong; Sun, Yun; Chang, Liann-Be; Chen, Jian-Wun

    2014-01-01

    Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.

  7. Design of non-polarizing cut-off filters based on dielectric-metal-dielectric stacks.

    PubMed

    Cai, Qing-Yuan; Luo, Hai-Han; Zheng, Yu-Xiang; Liu, Ding-Quan

    2013-08-12

    Cut-off filters are usually operating at oblique incidence and exhibit polarization dependence properties. We propose a simple approach to design cut-off filters with low linear polarization sensitivity (LPS) based on dielectric-metal-dielectric (DMD) stacks. The designing method is derived from the theory of optical film characteristic matrix. The admittance loci of the film are adjusted to achieve similar spectral properties of s- and p-polarized light at oblique incidence. Different film structures are designed non-polarizing at different angles of incidence with the method. The results show that the designing method is efficient for designing non-polarizing cut-off filters, which are widely used in non-polarizing optical system.

  8. Molecular recognition by multiple metal coordination inside wavy-stacked macrocycles.

    PubMed

    Nakamura, Takashi; Kaneko, Yuya; Nishibori, Eiji; Nabeshima, Tatsuya

    2017-07-25

    Most biological and synthetic receptors for small organic molecules employ a combination of relatively weak intermolecular interactions such as hydrogen bonds. A host compound that utilizes stronger yet reversible bonding in a synergistic manner could realize precise recognition, but the regulation and spatial arrangement of such reactive interaction moieties have been a challenge. Here, we show a multinuclear zinc complex synthesized from a macrocyclic ligand hexapap, which inwardly arranges labile metal coordination sites for external molecules. The metallomacrocycle forms a unique wavy-stacked structure upon binding a suitable length of dicarboxylic acids via multipoint coordination bonding. The saddle-shaped deformation and dimerization realize the differentiation of the interaction moieties, and change of guest-binding modes at specific metal coordination sites among the many present have been achieved utilizing acid/base as external stimuli.Synergistic use of coordination bonds that are strong and reversible realizes unique molecular recognition in artificial systems. Here, the authors show that a zinc-based metallomacrocyle can bind dicarboxylic acids of suitable length at specific metal sites by shape deformation and dimerization.

  9. Ab initio calculations of generalized-stacking-fault energy surfaces and surface energies for FCC metals

    NASA Astrophysics Data System (ADS)

    Wu, Xiao-Zhi; Wang, Rui; Wang, Shao-Feng; Wei, Qun-Yi

    2010-08-01

    The ab initio calculations have been used to study the generalized-stacking-fault energy (GSFE) surfaces and surface energies for the closed-packed (1 1 1) plane in FCC metals Cu, Ag, Au, Ni, Al, Rh, Ir, Pd, Pt, and Pb. The GSFE curves along <112> (1 1 1) direction and <110> (1 1 1) direction, and surface energies have been calculated from first principles. Based on the translational symmetry of the GSFE surfaces, the fitted expressions have been obtained from the Fourier series. Our results of the GSFEs and surface energies agree better with experimental results. The metals Al, Pd, and Pt have low γ/γI value, so full dislocation will be observed easily; while Cu, Ag, Au, and Ni have large γ/γI value, so it is preferred to create partial dislocation. From the calculations of surface energies, it is confirmed that the VIII column elements Ni, Rh, Ir, Pd, and Pt have higher surface energies than other metals.

  10. Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack.

    PubMed

    Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Seung-Hwan; Park, June; Seo, Yujin; Cho, Byung Jin; Shin, Changhwan; Shim, Joon Hyung; Yu, Hyun-Yong

    2016-12-28

    A perfect ohmic contact formation technique for low-resistance source/drain (S/D) contact of germanium (Ge) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. A metal-interlayer-semiconductor (M-I-S) structure with an ultrathin TiO2/GeO2 interlayer stack is introduced into the contact scheme to alleviate Fermi-level pinning (FLP), and reduce the electron Schottky barrier height (SBH). The TiO2 interlayer can alleviate FLP by preventing formation of metal-induced gap states (MIGS) with its very low tunneling resistance and series resistance and can provide very small electron energy barrier at the metal/TiO2 interface. The GeO2 layer can induce further alleviation of FLP by reducing interface state density (Dit) on Ge which is one of main causes of FLP. Moreover, the proposed TiO2/GeO2 stack can minimize interface dipole formation which induces the SBH increase. The M-I-S structure incorporating the TiO2/GeO2 interlayer stack achieves a perfect ohmic characteristic, which has proved unattainable with a single interlayer. FLP can be perfectly alleviated, and the SBH of the metal/n-Ge can be tremendously reduced. The proposed structure (Ti/TiO2/GeO2/n-Ge) exhibits 0.193 eV of effective electron SBH which achieves 0.36 eV of SBH reduction from that of the Ti/n-Ge structure. The proposed M-I-S structure can be suggested as a promising S/D contact technique for nanoscale Ge n-channel transistors to overcome the large electron SBH problem caused by severe FLP.

  11. Estimation of static corrections to improve the stacking of Ps reflection data from weathered layer converted phases

    NASA Astrophysics Data System (ADS)

    Ainiwaer, A.; Gurrola, H.; Kelvin, R.; Vail, P.; Rogers, K. D.

    2015-12-01

    In typical reflection processing, PdP phases (P wave reflected from a depth d) for several shot- receiver pairs, with the same midpoint, are stacked after applying moveout corrections (adjustments that move the PdP phases to the correctzero offset delay time). Moveout corrections are dependent on the average velocity to the given depth. The correct average velocity is considered that which produces largest stacked amplitude for the given phase. For three component reflection data, reflected P-to-S converted (PdS) phases are also stacked. Stacking the PdS phases requires estimates of the Vp/Vs ratio to a given depth; again by determining the value that results in the largest stacked amplitude. This method finds the average velocities over a large areas but fails to model small near surface velocity anomalies. These variations in velocity are replaced with shot and receiver static corrections, which are time delays at the shot and receiver to correct for slow velocities in a variable "weathered layer".Methods to estimate the static corrections due to topography and for P-phases are well developed, but methods to compute static corrections for PdS phases can be problematic. We have adapted the receiver function (RF) method typically used to estimate Vp/Vs ratio and depth to the Moho from Moho Pds phases. As with RFs, we are using deconvolution of the radial component of the reflected seismogram by the vertical component seismogram (that contains mostly PdP phases) to isolate weathered layer converted phases and reverberations (PdPwS, PdPSwS, and PdPPwS phases, where w is the depth of the weathered layer). Similarly, we deconvolve the vertical component seismograms by the radial to isolate weathered layer phases from the PdS phase ending in P (PdSwP, PdSSwP and PdSPwP). These phases are weak in individual seismograms, but we can stack all the RFs computed for a common receiver gather (data from all shots recorded at one receiver) to enhance these phases.

  12. Birnessite-Type MnO 2 Nanosheets with Layered Structures Under High Pressure: Elimination of Crystalline Stacking Faults and Oriented Laminar Assembly

    SciTech Connect

    Sun, Yugang; Wang, Lin; Liu, Yuzi; Ren, Yang

    2014-09-01

    Squeezing out crystalline stacking faults: Birnessite-type δ-phase MnO2 microflowers containing interconnected ultrathin nanosheets are synthesized through a microwave-assisted hydrothermal process and exhibit a layered crystalline structure with significant stacking faults. Compressing these MnO2 nanosheets in a diamond anvil cell with high pressure up to tens of GPa effectively eliminates the crystalline stacking faults.

  13. Effect of π-π+ stacking on the layering of ionic liquids confined to an amorphous carbon surface.

    PubMed

    Gong, Xiao; Kozbial, Andrew; Rose, Franck; Li, Lei

    2015-04-08

    In the current paper, AFM studies were conducted on nanometer-thick ionic liquids (ILs) confined to an amorphous carbon (AC) surface, which is critical to the design of the next-generation media lubricant for hard disk drives (HDDs). The results indicated that the existence of the delocalized ring in the cation is critical to layering of ILs. Extended layering was observed only when there is imidazolium ring in the cation. When the imidazolium ring is replaced by an aliphatic moiety, "drop-on-layer" (dewetting) structure was observed. On the basis of the experimental results, we proposed that π-π+ stacking between sp(2) carbon in the AC and the imidazolium cation in the ILs is the key to the extended layering of ILs at the ILs/AC interface.

  14. Polysulfide intercalated layered double hydroxides for metal capture applications

    DOEpatents

    Kanatzidis, Mercouri G.; Ma, Shulan

    2017-04-04

    Polysulfide intercalated layered double hydroxides and methods for their use in vapor and liquid-phase metal capture applications are provided. The layered double hydroxides comprise a plurality of positively charged host layers of mixed metal hydroxides separated by interlayer spaces. Polysulfide anions are intercalated in the interlayer spaces.

  15. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    NASA Astrophysics Data System (ADS)

    Zhou, Y. M.; He, M. Z.; Xie, Z.

    2014-10-01

    Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10-3 Pa. Ti/TaN double layers were formed on SiO2/Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO2/Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO2/Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu-Si compounds like Cu3Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO2/Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu3Si.

  16. Stacking fault energy of face-centered cubic metals: thermodynamic and ab initio approaches

    NASA Astrophysics Data System (ADS)

    Li, Ruihuan; Lu, Song; Kim, Dongyoo; Schönecker, Stephan; Zhao, Jijun; Kwon, Se Kyun; Vitos, Levente

    2016-10-01

    The formation energy of the interface between face-centered cubic (fcc) and hexagonal close packed (hcp) structures is a key parameter in determining the stacking fault energy (SFE) of fcc metals and alloys using thermodynamic calculations. It is often assumed that the contribution of the planar fault energy to the SFE has the same order of magnitude as the bulk part, and thus the lack of precise information about it can become the limiting factor in thermodynamic predictions. Here, we differentiate between the interfacial energy for the coherent fcc(1 1 1)/hcp(0 0 0 1) interface and the ‘pseudo-interfacial energy’ that enters the thermodynamic expression for the SFE. Using first-principles calculations, we determine the coherent and pseudo-interfacial energies for six elemental metals (Al, Ni, Cu, Ag, Pt, and Au) and three paramagnetic Fe-Cr-Ni alloys. Our results show that the two interfacial energies significantly differ from each other. We observe a strong chemistry dependence for both interfacial energies. The calculated pseudo-interfacial energies for the Fe-Cr-Ni steels agree well with the available literature data. We discuss the effects of strain on the description of planar faults via thermodynamic and ab initio approaches.

  17. Aerosol-Jet-Printing silicone layers and electrodes for stacked dielectric elastomer actuators in one processing device

    NASA Astrophysics Data System (ADS)

    Reitelshöfer, Sebastian; Göttler, Michael; Schmidt, Philip; Treffer, Philipp; Landgraf, Maximilian; Franke, Jörg

    2016-04-01

    In this contribution we present recent findings of our efforts to qualify the so called Aerosol-Jet-Printing process as an additive manufacturing approach for stacked dielectric elastomer actuators (DEA). With the presented system we are able to print the two essential structural elements dielectric layer and electrode in one machine. The system is capable of generating RTV-2 silicone layers made of Wacker Elastosil P 7670. Therefore, two aerosol streams of both precursor components A and B are generated in parallel and mixed in one printing nozzle that is attached to a 4-axis kinematic. At maximum speed the printing of one circular Elastosil layer with a calculated thickness of 10 μm and a diameter of 1 cm takes 12 seconds while the process keeps stable for 4.5 hours allowing a quite high overall material output and the generation of numerous silicone layers. By adding a second printing nozzle and the infrastructure to generate a third aerosol, the system is also capable of printing inks with conductive particles in parallel to the silicone. We have printed a reduced graphene oxide (rGO) ink prepared in our lab to generate electrodes on VHB 4905, Elastosil foils and finally on Aerosol-Jet-Printed Elastosil layers. With rGO ink printed on Elastosil foil, layers with a 4-point measured sheet resistance as low as 4 kΩ can be realized leaving room for improving the electrode printing time, which at the moment is not as good as the quite good time-frame for printing the silicone layers. Up to now we have used the system to print a fully functional two-layer stacked DEA to demonstrate the principle of continuously 3D printing actuators.

  18. Compositional modulated atomic layer stacking and uniaxial magnetocrystalline anisotropy of CoPt alloy sputtered films with close-packed plane orientation

    NASA Astrophysics Data System (ADS)

    Saito, Shin; Nozawa, Naoki; Hinata, Shintaro; Takahashi, Migaku; Shibuya, Kazunari; Hoshino, Kazuya; Awaya, Satoru

    2015-05-01

    An atomic layer stacking structure in hexagonal close packed (hcp) Co100-xPtx alloy films with c-plane sheet texture was directly observed by a high-angle annular dark-field imaging scanning transmission electron microscopy. The analysis of sequential and/or compositional atomic layer stacking structure and uniaxial magnetocrystalline anisotropy (Ku = Ku1 + Ku2) revealed that (1) integrated intensity of the superlattice diffraction takes the maximum at x = 20 at. % and shows broadening feature against x for the film fabricated under the substrate temperature (Tsub) of 400 °C. (2) Compositional separation structure in atomic layers is formed for the films fabricated under Tsub = 400 °C. A sequential alternative stacking of atomic layers with different compositions is hardly formed in the film with x = 50 at. %, whereas easily formed in the film with x = 20 at. %. This peculiar atomic layer stacking structure consists of in-plane-disordered Pt-rich and Pt-poor layers, which is completely different from the so-called atomic site ordered structure. (3) A face centered cubic atomic layer stacking as faults appeared in the host hcp atomic layer stacking exists in accompanies with irregularities for the periodicity of the compositional modulation atomic layers. (4) Ku1 takes the maximum of 1.4 × 107 erg/cm3 at around x = 20 at. %, whereas Ku2 takes the maximum of 0.7 × 107 erg/cm3 at around x = 40 at. %, which results in the maximum of 1.8 × 107 erg/cm3 of Ku at x = 30 at. % and a shoulder in compositional dependence of Ku in the range of x = 30-60 at. %. Not only compositional separation of atomic layers but also sequential alternative stacking of different compositional layers is quite important to improve essential uniaxial magnetocrystalline anisotropy.

  19. Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

    NASA Astrophysics Data System (ADS)

    Sahoo, S. K.; Misra, D.

    2012-06-01

    The temperature and field dependent leakage current in HfO2/SiO2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (ϕt) and activation energy (Ea) increase for chemically grown IL devices. The trap level energy, (ϕt) ˜ 0.2 eV, indicates that doubly charged oxygen vacancies (V2-) are the active electron traps which contribute to the leakage current in these gate stacks.

  20. Anisotropy of Earth's D'' layer and stacking faults in the MgSiO3 post-perovskite phase.

    PubMed

    Oganov, Artem R; Martonák, Roman; Laio, Alessandro; Raiteri, Paolo; Parrinello, Michele

    2005-12-22

    The post-perovskite phase of (Mg,Fe)SiO3 is believed to be the main mineral phase of the Earth's lowermost mantle (the D'' layer). Its properties explain numerous geophysical observations associated with this layer-for example, the D'' discontinuity, its topography and seismic anisotropy within the layer. Here we use a novel simulation technique, first-principles metadynamics, to identify a family of low-energy polytypic stacking-fault structures intermediate between the perovskite and post-perovskite phases. Metadynamics trajectories identify plane sliding involving the formation of stacking faults as the most favourable pathway for the phase transition, and as a likely mechanism for plastic deformation of perovskite and post-perovskite. In particular, the predicted slip planes are {010} for perovskite (consistent with experiment) and {110} for post-perovskite (in contrast to the previously expected {010} slip planes). Dominant slip planes define the lattice preferred orientation and elastic anisotropy of the texture. The {110} slip planes in post-perovskite require a much smaller degree of lattice preferred orientation to explain geophysical observations of shear-wave anisotropy in the D'' layer.

  1. Atomic Layer Deposition of Metal Sulfide Materials

    SciTech Connect

    Dasgupta, Neil P.; Meng, Xiangbo; Elam, Jeffrey W.; Martinson, Alex B. F.

    2015-02-17

    The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry.

  2. Electron Scattering at Surfaces of Epitaxial Metal Layers

    NASA Astrophysics Data System (ADS)

    Chawla, Jasmeet Singh

    and without thin epitaxial TiN(001) wetting layers and are studied for structure, crystalline quality, surface morphology, density and composition by a combination of x-ray diffraction theta-2theta scans, o-rocking curves, pole figures, reciprocal space mapping, Rutherford backscattering, x-ray reflectometry and transmission electron microscopy. The TiN(001) surface suppresses Cu and Ag dewetting, yielding lower defect density, no twinning, and smaller surface roughness than if grown on MgO(001). Textured polycrystalline Cu(111) layers 25-50-nm-thick are deposited on a stack of 7.5-nm-Ta on SiO2/Si(001), and subsequent in situ annealing at 350°C followed by sputter etching in Ar plasma yields Cu layers with independently variable thickness and grain size. Cu nanowires, 75 to 350 nm wide, are fabricated from Cu layers with different average grain size using a subtractive patterning process. In situ electron transport measurements at room temperature in vacuum and at 77 K in liquid nitrogen for single-crystal Cu and Ag layers is consistent with the Fuchs-Sondheimer (FS) model and indicates specular scattering at the metal-vacuum boundary with an average specularity parameter p = 0.8 and 0.6, respectively. In contrast, layers measured ex situ show diffuse surface scattering due to sub-monolayer oxidation. Also, addition of Ta atoms on Cu(001) surface perturbs the smooth interface potential and results in completely diffuse scattering at the Cu-Ta interface, and in turn, a higher resistivity of single-crystal Cu layers. In situ exposure of Cu(001) layers to O2 between 10 -3 and 105 Pa-s results in a sequential increase, decrease and increase of the electrical resistance which is attributed to specular surface scattering for clean Cu(001) and for surfaces with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. Electron transport measurements for polycrystalline Cu layers and wires show a 10-15% and 7-9% decrease in

  3. Silver doped metal layers for medical applications

    NASA Astrophysics Data System (ADS)

    Kocourek, T.; Jelínek, M.; Mikšovský, J.; Jurek, K.; Weiserová, M.

    2014-04-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  4. Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

    SciTech Connect

    Fadida, S. Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Kymissis, I.

    2014-10-28

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  5. Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

    SciTech Connect

    Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali; Murugavel, R.; Rao, C.N.R.

    2015-04-15

    Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a few layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.

  6. Bighorn Arch Seismic Experiment (BASE) crustal thickness: results from two layer teleseismic receiver function H-K stacking

    NASA Astrophysics Data System (ADS)

    Yeck, W. L.; Sheehan, A. F.; Schulte-Pelkum, V.; Yang, Z.; Anderson, M. L.; Erslev, E.; BASE Seismic Group

    2011-12-01

    We present high-density crustal thickness measurements of the Bighorn Mountains of north-central Wyoming using teleseismic P-S wave receiver functions as part of the Bighorn Arch Seismic Experiment (BASE). The goal of the BASE project is to better understand how basement-involved foreland arches form, how they are connected to plate tectonics, and what they reveal about rheology of the continental lithosphere. The Bighorn arch is considered an archetype of basement-involved foreland arches and therefore acts as an excellent setting for the investigation of these structures. Four main formation models have been proposed for the Bighorns, each with unique crustal structures. Through a complete structural analysis of the range, relying heavily on both active and passive seismic subsurface imaging, it will be possible to determine which of these models best fit the observations. We present crustal thickness measured directly using a novel two-layer, layer thickness-Vp/Vs grid search (H-K stacking, (Zhu and Kanamori, 2000)) as a means of accounting for the large effects of arch-bounding sedimentary basins. The BASE data set includes over 210 (38 broadband + 172 short period) three-component Flexible Array (FA) seismic stations folded into the concurrent Transportable Array (TA) network. Our FA broadband stations were configured to densify the TA grid from 70 km spacing to 35 km spacing. BASE's short-period seismometers were placed along 5 linear transects with station spacing between 5-11 km. The presence of large, thick sedimentary basins surrounding the mountains creates difficulty when interpreting teleseismic receiver functions due to reverberations in the sedimentary rock as well as a signal delay due to the slow basin. In order to overcome this, a two layer H-K stacking algorithm was used in order to first constrain basin properties and then use these constraints when H-K stacking for the Moho. Small Gaussian pulse widths (a = 5) were used when stacking for

  7. Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

    NASA Astrophysics Data System (ADS)

    Swaminathan, Shankar; Sun, Yun; Pianetta, Piero; McIntyre, Paul C.

    2011-11-01

    Correlations among physical and electrical properties of atomic layer deposited (ALD)-Al2O3 on H2O-prepulsed Ge(100) have been investigated to evaluate Al2O3 as an ultrathin interface passivation layer for higher-k/Al2O3/Ge gate stacks. In situ XPS in the ALD environment provides insights into the local composition evolution during the initial stages of ALD, evidencing (a) an incubation regime that may limit the minimum achievable capacitance equivalent thickness (CET) of these gate stacks, and (b) residual hydroxyl incorporation in the film consistent with the observed dielectric constant ˜7.2. Thickness scaling of the CET is consistent with a nearly abrupt interface as measured by synchrotron radiation photoemission spectroscopy (SRPES). SRPES studies also reveal that forming gas anneal provides passivation through monolayer-level formation of stoichiometric GeO2, suggesting a complex chemical interaction involving residual -OH groups in the as-grown ALD-Al2O3. Valence and conduction band offsets of prepulsed ALD-Al2O3 with respect to Ge are calculated to be 3.3 ± 0.1 and 2.6 ± 0.3 eV, indicating that these layers offer an effective barrier to hole and electron injection.

  8. Atomic layer deposition of metal sulfide materials.

    PubMed

    Dasgupta, Neil P; Meng, Xiangbo; Elam, Jeffrey W; Martinson, Alex B F

    2015-02-17

    CONSPECTUS: The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application

  9. Atomic layer deposition of metal sulfide materials

    DOE PAGES

    Dasgupta, Neil P.; Meng, Xiangbo; Elam, Jeffrey W.; ...

    2015-01-12

    The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivatingmore » interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application space

  10. Synthesis of Stacked-Cup Carbon Nanotubes in a Metal Free Low Temperature System

    NASA Technical Reports Server (NTRS)

    Kimura, Yuki; Nuth, Joseph A.; Johnson, Natasha M.; Farmer, Kevin D.; Roberts, Kenneth P.; Hussaini, Syed R.

    2011-01-01

    Stacked-cup carbon nanotubes were formed by either Fischer-Tropsch type or Haber Bosch type reactions in a metal free system. Graphite particles were used as the catalyst. The samples were heated at 600 C in a gas mixture of CO 75 Torr, N2 75 Torr and H2 550 Torr for three days. Trans mission electron microscope analysis of the catalyst surface at the completion of the experiment recognized the growth of nanotubes. They were 10-50 nm in diameter and approximately 1 micrometer in length. They had a hollow channel of 5-20 nm in the center. The nanotubes may have grown on graphite surfaces by the CO disproportionation reaction and the surface tension of the carbon nucleus may have determined the diameter. Although, generally, the diameter of a carbon nanotube depends on the size of the cataly1ic particles, the diameter of the nanotubes on graphite particles was independent of the particle size and significantly confined within a narrow range compared with that produced using catalytic amorphous iron-silicate nanoparticles. Therefore, they must have an unknown formation process that is different than the generally accepted mechanism.

  11. A study on stack configuration of continuous electrodeionization for removal of heavy metal ions from the primary coolant of a nuclear power plant.

    PubMed

    Yeon, Kyeong-Ho; Song, Jung-Hoon; Moon, Seung-Hyeon

    2004-04-01

    This study investigated the production of high-purity water in the primary coolant of a nuclear power plant via the continuous electrodeionization (CEDI) process, using ion exchange resins as ion-conducting media between ion exchange membranes. The effectiveness of this method was examined with respect to the removal of heavy metals. The study was carried out on a laboratory scale with an effective area of 20 cm(2). The CEDI system was operated with a layered bed of cation exchange resins, anion exchange resins, and mixed-bed ion exchange resins. The stack configuration was designed to prevent a reaction between metal ions and hydroxide ions. The CEDI operation with the layered bed removed more than 99% of the ions at 30% of the current efficiency. The results showed that, with an inlet conductivity of 40 microScm(-1), a linear velocity of 4.17 cms(-1), and an applied current density of 17 mAcm(-2), the CEDI process yielded an outlet conductivity of 0.5 microScm(-1), thereby preventing the precipitation of metal ions. This study therefore successfully demonstrated the feasibility of the CEDI operation for the removal of heavy metals at a very low concentration.

  12. Photoinduced switching to metallic states in the two-dimensional organic Mott insulator dimethylphenazine-tetrafluorotetracyanoquinodimethane with anisotropic molecular stacks

    NASA Astrophysics Data System (ADS)

    Matsuzaki, Hiroyuki; Ohkura, Masa-aki; Ishige, Yu; Nogami, Yoshio; Okamoto, Hiroshi

    2015-06-01

    A photoinduced phase transition was investigated in an organic charge-transfer (CT) complex M2P -TCNQ F4 , [M2P : 5,10-dihydro-5,10-dimethylphenazine, donor (D) molecule; TCNQ F4 : 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, acceptor (A) molecule] by means of femtosecond pump-probe reflection spectroscopy. This is an ionic compound and has a peculiar two-dimensional (2D) molecular arrangement; the same A (or D) molecules arrange along the [100] direction, and A and D molecules alternately arrange along the [111] direction. It results in a strongly anisotropic two-dimensional electronic structure. This compound shows a structural and magnetic phase transition at 122 K below which the two neighboring molecules are dimerized along both the [100] and [111] directions. We demonstrate that two kinds of photoinduced phase transitions occur by irradiation of a femtosecond laser pulse; in the high-temperature lattice-uniform phase, a quasi-one-dimensional (1D) metallic state along the AA(DD) stack is generated, and in the low-temperature lattice-dimerized phase, a quasi-2D metallic state is initially produced and molecular dimerizations are subsequently released. Mixed-stack CT compounds consisting of DA stacks are generally insulators or semiconductors in the ground state. Here, such a dynamical metallization in the DA stack is demonstrated. The release of the dimerizations drives several kinds of coherent oscillations which play an important role in the stabilization of the lattice-dimerized phase. The mechanisms of those photoinduced phase transitions are discussed in terms of the magnitudes of the anisotropic bandwidths and molecular dimerizations along two different directions of the molecular stacks.

  13. Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

    SciTech Connect

    Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

    2016-07-14

    An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al{sub 2}O{sub 3} layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

  14. Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

    NASA Astrophysics Data System (ADS)

    Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

    2016-07-01

    An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

  15. Selective realignment of the exchange biased magnetization direction in spintronic layer stacks using continuous and pulsed laser radiation

    NASA Astrophysics Data System (ADS)

    Berthold, I.; Müller, M.; Ebert, R.; Schille, J.; Löschner, U.; Exner, H.; Matthes, P.; Albrecht, M.

    2014-03-01

    We report on selective realignment of the magnetization direction of the exchange biased ferromagnetic layer in two different spintronic layer stacks using laser radiation. The exchange bias effect occurs in an antiferromagnetic/ferromagnetic bilayer system when cooled in an external magnetic field below the Néel temperature and results in a shift of the ferromagnetic hysteresis loop with increased coercivity. The effect is utilized to pin the magnetization direction of the reference ferromagnetic layer in spin valve systems. We investigated the realignment of the pinned magnetization direction in a spin valve system with in plane exchange bias and in a Co/Pt multilayer with perpendicular exchange bias. The layer stacks were heated above the Néel temperature in a defined lateral area by using rapidly deflected laser radiation. Two different laser assisted annealing techniques were investigated applying either continuous or pulsed laser radiation. During laser annealing, the sample was subjected to an external magnetic field in order to selectively realign the magnetization direction of the pinned ferromagnetic layer. Magnetic structuring was performed by heating narrow single tracks as well as irradiating single pulses. By using a magneto optical sensor in combination with a polarization microscope, the magnetic structures have been visualized. After laser annealing of larger-scaled areas, the exchange bias field strength and the coercive field strength were analyzed using a magneto optical Kerr effect set up (MOKE). The impact of the processing parameters laser peak intensity, laser pulse duration, scan speed (continuous wave) and magnetic field strength on the resulting reversed exchange bias field was evaluated.

  16. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

    PubMed

    Tang, Kechao; Meng, Andrew C; Droopad, Ravi; McIntyre, Paul C

    2016-11-09

    Intentional oxidation of an As2-decapped (100) In0.57Ga0.43As substrate by additional H2O dosing during initial Al2O3 gate dielectric atomic layer deposition (ALD) increases the interface trap density (Dit), lowers the band edge photoluminescence (PL) intensity, and generates Ga-oxide detected by X-ray photoelectron spectroscopy (XPS). Aberration-corrected high resolution transmission electron microscopy (TEM) reveals formation of an amorphous interfacial layer which is distinct from the Al2O3 dielectric and which is not present without the additional H2O dosing. Observation of a temperature dependent border trap response, associated with the frequency dispersion of the accumulation capacitance and conductance of metal-oxide-semiconductor (MOS) structures, is found to be correlated with the presence of this defective interfacial layer. MOS capacitors prepared with additional H2O dosing show a notable decrease (∼20%) of accumulation dispersion over 5 kHz to 500 kHz when the measurement temperature decreases from room temperature to 77 K, while capacitors prepared with an abrupt Al2O3/InGaAs interface display little change (<2%) with temperature. Similar temperature-dependent border trap response is also observed when the (100) InGaAs surface is treated with a previously reported HCl(aq) wet cleaning procedure prior to Al2O3 ALD. These results point out the sensitivity of the temperature dependence of the border trap response in metal oxide/III-V MOS gate stacks to the presence of processing-induced interface oxide layers, which alter the dynamics of carrier trapping at defects that are not located at the semiconductor interface.

  17. Ultraviolet laser damage and optical properties of high-refractive-index single layers, multiple layers, and high/low index multilayer stacks

    NASA Astrophysics Data System (ADS)

    McInnes, Hazel A.; Andrew, James E.; Bazin, Nicholas J.; Morris, A. J.; Porter, K. J.

    1998-04-01

    Laser induced damage thresholds, measured using N-on-1 and R-on-1 testing, of single layer high index zirconia and hafnia coatings, derived from nitric or acetic acid stabilized sol-gel processing, are reported. Single layer acetic acid, nitric acid and base catalyzed silica sol-gel coatings have also been tested. The sol-gels were dip coated onto fused silica substrates at a rate of 3mm/s. The refractive index of the materials were measured using transmission spectra of multiple pairs of high and low refractive index materials. Absorption in the UV region was similarly measured with multiple layers of the same material and fitting to a Beer's law behavior. The high index materials used were zirconia or hafnia, the low index material was silica. The compatibility of the various combinations of high and low index materials for physical stacking without cracking, achieving high reflectivity and high damage thresholds are discussed and compared.

  18. New layered metal oxides as positive electrode materials for room-temperature sodium-ion batteries

    NASA Astrophysics Data System (ADS)

    Mu, Lin-Qin; Hu, Yong-Sheng; Chen, Li-Quan

    2015-03-01

    In order to achieve better Na storage performance, most layered oxide positive electrode materials contain toxic and expensive transition metals Ni and/or Co, which are also widely used for lithium-ion batteries. Here we report a new quaternary layered oxide consisting of Cu, Fe, Mn, and Ti transition metals with O3-type oxygen stacking as a positive electrode for room-temperature sodium-ion batteries. The material can be simply prepared by a high-temperature solid-state reaction route and delivers a reversible capacity of 94 mAh/g with an average storage voltage of 3.2 V. This paves the way for cheaper and non-toxic batteries with high Na storage performance. Project supported by the National Natural Science Foundation of China (Grant Nos. 51222210 and 11234013) and the One Hundred Talent Project of the Chinese Academy of Sciences.

  19. Impact Electrochemistry of Layered Transition Metal Dichalcogenides.

    PubMed

    Lim, Chee Shan; Tan, Shu Min; Sofer, Zdeněk; Pumera, Martin

    2015-08-25

    Layered transition metal dichalcogenides (TMDs) exhibit paramount importance in the electrocatalysis of the hydrogen evolution reaction. It is crucial to determine the size of the electrocatalytic particles as well as to establish their electrocatalytic activity, which occurs at the edges of these particles. Here, we show that individual TMD (MoS2, MoSe2, WS2, or WSe2; in general MX2) nanoparticles impacting an electrode surface provide well-defined current "spikes" in both the cathodic and anodic regions. These spikes originate from direct oxidation of the nanoparticles (from M(4+) to M(6+)) at the anodic region and from the electrocatalytic currents generated upon hydrogen evolution in the cathodic region. The positive correlation between the frequency of the impacts and the concentration of TMD nanoparticles is also demonstrated here, enabling determination of the concentration of TMD nanoparticles in colloidal form. In addition, the size of individual TMD nanoparticles can be evaluated using the charge passed during every spike. The capability of detecting both the "indirect" catalytic effect of an impacting TMD nanoparticle as well as "direct" oxidation indicates that the frequency of impacts in both the "indirect" and "direct" scenarios are comparable. This suggests that all TMD nanoparticles, which are electrochemically oxidizable (thus capable of donating electrons to electrodes), are also capable of catalyzing the hydrogen reduction reaction.

  20. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  1. Solder for oxide layer-building metals and alloys

    DOEpatents

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  2. Shear, Bulk, and Young's Moduli of Clay/Polymer Nanocomposites Containing the Stacks of Intercalated Layers as Pseudoparticles

    NASA Astrophysics Data System (ADS)

    Zare, Yasser

    2016-10-01

    The pseudoparticles include the stacks of intercalated layers in the case of incomplete clay exfoliation in clay/polymer nanocomposites. In this article, the effects of pseudoparticle properties on the shear, bulk, and Young's moduli of nanocomposites are studied using the Norris model. The properties of pseudoparticles are determined in some samples by the experimental data of Young's modulus and the roles of pseudoparticles in the shear, bulk, and Young's moduli of nanocomposites are discussed. The calculations show a good agreement with the experimental data when the pseudoparticles are taken into account in the samples. A low number of clay layers in the pseudoparticles present high moduli in nanocomposites. Moreover, the Poisson ratio and Young's modulus of polymer matrix play different roles in the shear, bulk, and Young's moduli of nanocomposites.

  3. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  4. Commissioning of a conformal irradiation system for heavy-ion radiotherapy using a layer-stacking method

    SciTech Connect

    Kanai, Tatsuaki; Kanematsu, Nobuyuki; Minohara, Shinichi; Komori, Masataka; Torikoshi, Masami; Asakura, Hiroshi; Ikeda, Noritoshi; Uno, Takayuki; Takei, Yuka

    2006-08-15

    The commissioning of conformal radiotherapy system using heavy-ion beams at the Heavy Ion Medical Accelerator in Chiba (HIMAC) is described in detail. The system at HIMAC was upgraded for a clinical trial using a new technique: large spot uniform scanning with conformal layer stacking. The system was developed to localize the irradiation dose to the target volume more effectively than with the old system. With the present passive irradiation method using a ridge filter, a scatterer, a pair of wobbler magnets, and a multileaf collimator, the width of the spread-out Bragg peak (SOBP) in the radiation field could not be changed. With dynamic control of the beam-modifying devices during irradiation, a more conformal radiotherapy could be achieved. In order to safely perform treatments with this conformal therapy, the moving devices should be watched during irradiation and the synchronousness among the devices should be verified. This system, which has to be safe for patient irradiations, was constructed and tested for safety and for the quality of the dose localization realized. Through these commissioning tests, we were successfully able to prepare the conformal technique using layer stacking for patients. Subsequent to commissioning the technique has been applied to patients in clinical trials.

  5. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  6. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials--A general bond polarizability model.

    PubMed

    Luo, Xin; Lu, Xin; Cong, Chunxiao; Yu, Ting; Xiong, Qihua; Quek, Su Ying

    2015-10-15

    2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences, leading to different physical properties. Here, we show that regardless of the space group of the 2D materials, the Raman frequencies of the interlayer shear modes observed under the typical z(xx)z configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.

  7. Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

    NASA Astrophysics Data System (ADS)

    Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

    2017-08-01

    In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

  8. Auger electron spectroscopy of contrast-forming layers on metals

    NASA Technical Reports Server (NTRS)

    Hoffmann, Siegfried; Exner, Hans Eckart

    1988-01-01

    As shown by Auger electron spectroscopy, the layers formed during contrasting metallographic polished Cu and Ni with an apparatus using intense electron bombardment consist of metal sputtered from the Au, Fe, or Pb cathode. This layer takes up oxygen from the residual atmosphere. The mechanism of contrast enhancement is the same as that of vapor-deposited interference layers.

  9. Effect of stacking fault energy on mechanism of plastic deformation in nanotwinned FCC metals

    SciTech Connect

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.; LeSar, Richard

    2015-05-15

    Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. In addition, these potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (FCC) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into two distinct regimes corresponding to 'low' and 'high' stacking fault energies.

  10. Effect of stacking fault energy on mechanism of plastic deformation in nanotwinned FCC metals

    DOE PAGES

    Borovikov, Valery; Mendelev, Mikhail I.; King, Alexander H.; ...

    2015-05-15

    Starting from a semi-empirical potential designed for Cu, we have developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. In addition, these potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (FCC) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into twomore » distinct regimes corresponding to 'low' and 'high' stacking fault energies.« less

  11. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

    NASA Astrophysics Data System (ADS)

    Kiumarsi, Hamid; Mizuochi, Yutaka; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A three-stage inverter-based stacked power amplifier (PA) in complementary metal oxide semiconductor (CMOS) process is proposed to overcome low breakdown voltage problem of scaled CMOS technologies. Unlike previous reported stacked PAs which radio frequency choke (RFC) was inevitable, we proposed stacked nMOS and pMOS transistors which effectively eliminates use of RFC. By properly setting self-biased circuits' and transistors' parameters, output impedance could reach up to 50 Ω which together with not employing the RFC makes this topology very appealing for the scalable PA realization. As a proof of concept, a three-stage PA using 65 nm CMOS technology is implemented. With a 6 V power supply for the third stage, the fabricated PA shows a small-signal gain of 36 dB, a saturated output power of 16 dBm and a maximum power added efficiency of 10% at 1 GHz. Using a 7.5 V of power supply, saturated output power reaches 18 dBm. To the best of our knowledge, this is the first reported inverter-based stacked PA.

  12. Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers

    NASA Astrophysics Data System (ADS)

    Watanabe, Kyota; Fukami, Shunsuke; Sato, Hideo; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo

    2017-08-01

    We investigate the annealing temperature dependence of the magnetic properties of CoFeB/MgO stacks with different buffer materials (Mo, Ta, and W). For Mo and W, bcc-crystalline and amorphous-like films are prepared by changing the deposition conditions. A relatively small saturation magnetization is maintained after annealing up to 400 °C for the samples with bcc-W, bcc-Mo, and amorphous-like Mo buffers. A small variation in magnetic dead layer thickness with annealing is observed for the samples with bcc-crystalline buffer layers. The interfacial anisotropy is found to mainly depend on the element of the buffer layer used regardless of its crystalline structure, and is larger for the samples with W and Mo buffers than those with Ta buffer. The sample with bcc-Mo buffer shows the highest robustness against annealing among the studied systems. We give a systematic picture based on the thermochemistry that can reasonably explain the observed buffer layer dependence of the variations in magnetic properties with annealing.

  13. Molecular Interdiffusion between Stacked Layers by Solution and Thermal Annealing Processes in Organic Light Emitting Devices.

    PubMed

    Ohisa, Satoru; Pu, Yong-Jin; Yamada, Norifumi L; Matsuba, Go; Kido, Junji

    2015-09-23

    In organic light emitting devices (OLEDs), interfacial structures between multilayers have large impacts on the characteristics of OLEDs. Herein, we succeeded in revealing the interdiffusion in solution processed and thermal annealed OLEDs by neutron reflectometry. We investigated interfaces between a polymer under layer and small molecules upper layer. The small molecules diffused into the swollen polymer layer during the interfacial formation by the solution process, but the polymer did not diffuse into the small molecules layer. At temperatures close to the glass transition temperatures of the materials, asymmetric molecular diffusion was observed. We elucidated the effects of the interdiffusion on the characteristics of OLEDs. Partially mixing the interface improved the current efficiencies due to suppressed triplet-polaron quenching at the interface. Controlling and understanding the interfacial structures of the miultilayers will be more important to improve the OLED characteristics.

  14. Formation and Characterization of Stacked Nanoscale Layers of Polymers and Silanes on Silicon Surfaces

    NASA Astrophysics Data System (ADS)

    Ochoa, Rosie; Davis, Brian; Conley, Hiram; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

    2008-10-01

    Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Complete and consistent formation of nanoscale layers of silanes and polymers is a necessary first step for chemical patterning. We explored methods of silanizing silicon substrates for the purpose of functionalizing the surfaces. The chemical functionalization, stability, flatness, and repeatability of the process was characterized by use of ellipsometry, water contact angle, and Atomic Force Microscopy (AFM). We found that forming the highest quality functionalized surfaces was accomplished through use of chemical vapor deposition (CVD). Specifically, surfaces were plasma cleaned and hydrolyzed before the silane was applied. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer. The chemical functionalization, stability, flatness, and repeatability of the process was also characterized for the polymer layer using ellipsometry, water contact angle, and AFM.

  15. Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Yoshida, S.; Lin, D.; Vais, A.; Alian, A.; Franco, J.; El Kazzi, S.; Mols, Y.; Miyanami, Y.; Nakazawa, M.; Collaert, N.; Watanabe, H.; Thean, A.

    2016-10-01

    We systematically studied the effects of metal electrodes on high-k/InGaAs gate stacks and observed that the remote reactions—both oxidation and reduction—at the interface between the high-k dielectrics and InGaAs were thermodynamically initiated by the metal electrodes. Metal electrodes with negative Gibbs free energies (e.g., Pd) resulted in the oxidation of the InGaAs surface during the forming-gas annealing. In contrast, with TiN electrodes, which have a positive Gibbs free energy, the native III-V oxides underwent the reduction between the high-k dielectrics and InGaAs. We demonstrated that the reduction of native III-V oxides by metal electrodes improved the interface quality of the high-k/InGaAs gate stacks and produced an interface trap density (Dit) at the mid-gap with a value as low as 5.2 × 1011 cm-2 eV-1 with a scaled capacitance-equivalent thickness.

  16. Piezo-stack vortex generators for boundary layer control of a delta wing micro-aerial vehicle

    NASA Astrophysics Data System (ADS)

    Mystkowski, Arkadiusz

    2013-11-01

    This paper presents an idea for the control of flow separation over solid surfaces by piezo-stack vortex generators. The vortex generators are small vibrating plates attached to the delta wing surface. A model of the micro-aerial vehicle (MAV) controlled by vortex piezo-generators is presented. The vortex generators are applied to produce the appropriate aerodynamical forces and moments controlling the flight of the aircraft. The efficiency of the vortex generators is proved by the wind tunnel test results. The oscillatory added lift and drag coefficients versus angle of attack are presented. The optimal vortex generator amplitude and frequency are investigated. Boundary layer control (BLC) for delta wing micro-aircraft increases the manoeuvrability and performance of the MAV.

  17. Compositional modulated atomic layer stacking and uniaxial magnetocrystalline anisotropy of CoPt alloy sputtered films with close-packed plane orientation

    SciTech Connect

    Saito, Shin Nozawa, Naoki; Hinata, Shintaro; Takahashi, Migaku; Shibuya, Kazunari; Hoshino, Kazuya; Awaya, Satoru

    2015-05-07

    An atomic layer stacking structure in hexagonal close packed (hcp) Co{sub 100−x}Pt{sub x} alloy films with c-plane sheet texture was directly observed by a high-angle annular dark-field imaging scanning transmission electron microscopy. The analysis of sequential and/or compositional atomic layer stacking structure and uniaxial magnetocrystalline anisotropy (K{sub u} = K{sub u1} + K{sub u2}) revealed that (1) integrated intensity of the superlattice diffraction takes the maximum at x = 20 at. % and shows broadening feature against x for the film fabricated under the substrate temperature (T{sub sub}) of 400 °C. (2) Compositional separation structure in atomic layers is formed for the films fabricated under T{sub sub} = 400 °C. A sequential alternative stacking of atomic layers with different compositions is hardly formed in the film with x = 50 at. %, whereas easily formed in the film with x = 20 at. %. This peculiar atomic layer stacking structure consists of in-plane-disordered Pt-rich and Pt-poor layers, which is completely different from the so-called atomic site ordered structure. (3) A face centered cubic atomic layer stacking as faults appeared in the host hcp atomic layer stacking exists in accompanies with irregularities for the periodicity of the compositional modulation atomic layers. (4) K{sub u1} takes the maximum of 1.4 × 10{sup 7 }erg/cm{sup 3} at around x = 20 at. %, whereas K{sub u2} takes the maximum of 0.7 × 10{sup 7 }erg/cm{sup 3} at around x = 40 at. %, which results in the maximum of 1.8 × 10{sup 7 }erg/cm{sup 3} of K{sub u} at x = 30 at. % and a shoulder in compositional dependence of K{sub u} in the range of x = 30–60 at. %. Not only compositional separation of atomic layers but also sequential alternative stacking of different compositional layers is quite important to improve essential uniaxial magnetocrystalline anisotropy.

  18. White-light emitting thin film electroluminescent devices with stacked SrS:Ce/CaS:Eu active layers

    NASA Astrophysics Data System (ADS)

    Ono, Yoshimasa A.; Fuyama, Moriaki; Onisawa, Ken-ichi; Tamura, Katsumi; Ando, Masahiko

    1989-12-01

    By stacking blue-green emitting SrS:Ce and red-emitting CaS:Eu active layers, white-light emitting electroluminescent (EL) devices were fabricated. Luminance improvement and EL characteristics of SrS:Ce and CaS:Eu EL devices were discussed. The electrooptical characteristics of white-light emitting EL devices with stacked SrS:Ce/CaS:Eu active layers were presented. Color changed from blue-green to white by changing the voltage or frequency. Finally, feasibility of multicolor EL devices by using the fabricated white-light emitting EL devices with color filters were discussed. UFpg5523,5527 UFid992922JAP UFttIn situ ac magnetic susceptibility of gadolinium thin films UFauF. H. SalasSUPa),b) and M. Mirabal-GarciaaSUPc) UFloInstitut fuur Atom- und Festkourperphysik, Freie Universitaut Berlin, D-1000 Berlin 33, ufquadFederal Republic of Germany UFsd(Received 27 April 1989; accepted for publication 3 August 1989) UFabWe report measurements of the ac magnetic susceptibility on Gd(0001)/W(110) thin films grown in ultrahigh vacuum. The measurements were made by using a pickup coil, in which the geometry and the number of turns were optimized. We applied an alternating magnetic field of about 2 Grms at frequencies of 180 and 340 Hz. The growth mode and the deposition rate of the Gd films were determined by performing conventional Auger electron spectroscopy during film growth. In films with thickness larger than 10 nm our technique is sensitive up to 1016 atoms/Grms , which allowed us to study the critical behavior of the magnetic susceptibility as the Curie temperature is approached from above, TT+C . A sharp maximum, which may be related to the Hopkinson effect, is observed at a temperature TH 289 K.

  19. On the nature of the stacking interaction between two graphene layers

    NASA Astrophysics Data System (ADS)

    Wang, Weizhou; Zhang, Yu; Sun, Tao; Wang, Yi-Bo

    2015-01-01

    The interlayer interaction energy and its components of the bilayer graphene were obtained by extrapolation of the interlayer interaction energies and their components of the dimers formed by graphene with benzene, naphthalene, anthracene, phenanthrene, pyrene, tetracene, perylene, pentacene and hexacene. The resulting interaction energy of the bilayer graphene is -1.82 kcal/mol (or -79 meV) per carbon atom. The dispersion energy represents 70% of the total attractive energy between two graphene layers. In contrast, the electrostatic component is responsible for 25% of the total attractive interaction and the induction term contributes 5% to the stability of two graphene layers.

  20. Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology

    NASA Astrophysics Data System (ADS)

    Leitsmann, Roman; Lazarevic, Florian; Drescher, Maximilian; Erben, Elke

    2017-06-01

    We have carried out a combined experimental and theoretical study on the influence of lanthanum, nitrogen, and fluorine treatments on the electric properties of high-k metal gate (HKMG) devices. In particular, we have developed a theoretical gate stack model which is able to predict qualitatively and quantitatively the influence of nitrogen, fluorine, and lanthanum treatments on the characteristic electric properties of Si-SiON-HfO2 gate stacks. The combination of this theoretical model with experimental investigations of several differently treated HKMG devices allows the estimation of the amount of incorporated impurity atoms in different material layers. Furthermore, we propose an atomistic mechanism for the incorporation of lanthanum and fluorine impurity atoms and we can explain the results of recent leakage current measurements by a passivation of oxygen vacancies within the HfO2 layer.

  1. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    NASA Astrophysics Data System (ADS)

    Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

    2016-04-01

    Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  2. The energy components of stacked chromatin layers explain the morphology, dimensions and mechanical properties of metaphase chromosomes

    PubMed Central

    Daban, Joan-Ramon

    2014-01-01

    The measurement of the dimensions of metaphase chromosomes in different animal and plant karyotypes prepared in different laboratories indicates that chromatids have a great variety of sizes which are dependent on the amount of DNA that they contain. However, all chromatids are elongated cylinders that have relatively similar shape proportions (length to diameter ratio approx. 13). To explain this geometry, it is considered that chromosomes are self-organizing structures formed by stacked layers of planar chromatin and that the energy of nucleosome–nucleosome interactions between chromatin layers inside the chromatid is approximately 3.6 × 10−20 J per nucleosome, which is the value reported by other authors for internucleosome interactions in chromatin fibres. Nucleosomes in the periphery of the chromatid are in contact with the medium; they cannot fully interact with bulk chromatin within layers and this generates a surface potential that destabilizes the structure. Chromatids are smooth cylinders because this morphology has a lower surface energy than structures having irregular surfaces. The elongated shape of chromatids can be explained if the destabilizing surface potential is higher in the telomeres (approx. 0.16 mJ m−2) than in the lateral surface (approx. 0.012 mJ m−2). The results obtained by other authors in experimental studies of chromosome mechanics have been used to test the proposed supramolecular structure. It is demonstrated quantitatively that internucleosome interactions between chromatin layers can justify the work required for elastic chromosome stretching (approx. 0.1 pJ for large chromosomes). The high amount of work (up to approx. 10 pJ) required for large chromosome extensions is probably absorbed by chromatin layers through a mechanism involving nucleosome unwrapping. PMID:24402918

  3. Band structure engineered layered metals for low-loss plasmonics

    PubMed Central

    Gjerding, Morten N.; Pandey, Mohnish; Thygesen, Kristian S.

    2017-01-01

    Plasmonics currently faces the problem of seemingly inevitable optical losses occurring in the metallic components that challenges the implementation of essentially any application. In this work, we show that Ohmic losses are reduced in certain layered metals, such as the transition metal dichalcogenide TaS2, due to an extraordinarily small density of states for scattering in the near-IR originating from their special electronic band structure. On the basis of this observation, we propose a new class of band structure engineered van der Waals layered metals composed of hexagonal transition metal chalcogenide-halide layers with greatly suppressed intrinsic losses. Using first-principles calculations, we show that the suppression of optical losses lead to improved performance for thin-film waveguiding and transformation optics. PMID:28436432

  4. Band structure engineered layered metals for low-loss plasmonics.

    PubMed

    Gjerding, Morten N; Pandey, Mohnish; Thygesen, Kristian S

    2017-04-24

    Plasmonics currently faces the problem of seemingly inevitable optical losses occurring in the metallic components that challenges the implementation of essentially any application. In this work, we show that Ohmic losses are reduced in certain layered metals, such as the transition metal dichalcogenide TaS2, due to an extraordinarily small density of states for scattering in the near-IR originating from their special electronic band structure. On the basis of this observation, we propose a new class of band structure engineered van der Waals layered metals composed of hexagonal transition metal chalcogenide-halide layers with greatly suppressed intrinsic losses. Using first-principles calculations, we show that the suppression of optical losses lead to improved performance for thin-film waveguiding and transformation optics.

  5. hcp metal nanoclusters with hexagonal A-A bilayer stacking stabilized by enhanced covalent bonding

    SciTech Connect

    Li, Shunfang; Li, Haisheng; Xue, Xinlian; Jia, Yu; Guo, Zheng Xiao; Zhang, Zhenyu; Gong, Xingao

    2010-01-01

    First-principles total energy calculations within density functional theory have been performed to study the geometric and electronic structures of Ru{sub n} nanoclusters of varying size n (14{<=}n{<=}42). Strikingly, for the size range of n=14 to 38, the clusters always prefer a hexagonal bilayer structure with A-A stacking, rather than some of the more closely packed forms, or bilayer with A-B stacking. Such an intriguing 'molecular double-wheel' form is stabilized by substantially enhanced interlayer covalent bonding associated with strong s-d hybridization. Similar A-A stacking is also observed in the ground states or low-lying isomers of the clusters composed of other hcp elements, such as Os, Tc, Re, and Co. Note that these 'molecular double-wheels' show enhanced chemical activity toward H{sub 2}O splitting relative to their bulk counterpart, implying its potential applications as nanocatalysts.

  6. Structure and stacking-fault energy in metals Al, Pd, Pt, Ir, and Rh

    NASA Astrophysics Data System (ADS)

    Cai, J.; Wang, F.; Lu, C.; Wang, Y. Y.

    2004-06-01

    The generalized stacking faults of Al, Pd, Pt, Ir, and Rh are investigated by a parametrized tight-binding potential. The stacking-fault energies (SFEs) are calculated to be in good agreement with experimental data, except for Al. More important, it is found that the SFE of Pt may be reduced by 14% by atom relaxation while the effect of atom relaxation on the SFEs of Al, Pd, Ir, and Rh are small. Thus, it is concluded that the effect of atom relaxation on SFE should be important, especially for an alloy system where radii difference between two constituting elements is large.

  7. Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes.

    PubMed

    Soni, Rohit; Meuffels, Paul; Petraru, Adrian; Hansen, Mirko; Ziegler, Martin; Vavra, Ondrej; Kohlstedt, Hermann; Jeong, Doo Seok

    2013-12-21

    Bipolar switching behaviours of electrochemical metallization (ECM) cells with dual-layer solid electrolytes (SiOx-Ge0.3Se0.7) were analyzed. Type 1 ECM cell, Pt (bottom electrode)/SiOx/Ge0.3Se0.7/Cu (top electrode), exhibited typical eightwise current-voltage (I-V) hysteresis of ECM cells whereas Type 2 ECM cell, Pt (bottom electrode)/Ge0.3Se0.7/SiOx/Cu(top electrode), showed counter-eightwise hysteresis. In addition, absolute off-switching voltage in Type 2 cell is lower than that in Type 1 cell while on-switching voltage in both cells is almost the same. An attempt to understand this electrolyte-stack-sequence-depending switching polarity reversal was made in terms of the ECM cell potential change upon the electrolyte stack sequence and the consequent change in Cu filament growth direction. Relevant experimental evidence for the hypothesis was obtained regarding the switching behaviours. Furthermore, given the switching polarity reversal, feasibility of serial complementary resistive switches was also demonstrated.

  8. Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

    NASA Astrophysics Data System (ADS)

    Semmelroth, K.; Berwian, P.; Schröter, C.; Leibiger, G.; Schönleber, M.; Friedrich, J.

    2015-10-01

    For improved real-time process control we integrated a novel optical in-situ monitoring system in a vertical reactor for hydride vapor phase epitaxy (HVPE) growth of gallium nitride (GaN) bulk crystals. The in-situ monitoring system consists of a fiber-optical interferometric sensor in combination with an optimized differential measuring head. The system only needs one small optical path perpendicular to the center of the layer stack typically consisting of sapphire as substrate and GaN. It can handle sample distances up to 1 m without difficulty. The in-situ monitoring system is simultaneously measuring the optical layer thicknesses of the GaN/sapphire layer stack and the absolute change of the distance between the measuring head and the backside of the layer stack. From this data it is possible to calculate the thickness of the growing GaN up to a thickness of about 1000 μm and the absolute change in curvature of the layer stack. The performance of the in-situ monitoring system is shown and discussed based on the measured interference signals recorded during a short-time and a long-time HVPE growth run.

  9. Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi2Se3 and MoS2 atomic layers

    PubMed Central

    Vargas, Anthony; Liu, Fangze; Lane, Christopher; Rubin, Daniel; Bilgin, Ismail; Hennighausen, Zachariah; DeCapua, Matthew; Bansil, Arun; Kar, Swastik

    2017-01-01

    Vertical stacking is widely viewed as a promising approach for designing advanced functionalities using two-dimensional (2D) materials. Combining crystallographically commensurate materials in these 2D stacks has been shown to result in rich new electronic structure, magnetotransport, and optical properties. In this context, vertical stacks of crystallographically incommensurate 2D materials with well-defined crystallographic order are a counterintuitive concept and, hence, fundamentally intriguing. We show that crystallographically dissimilar and incommensurate atomically thin MoS2 and Bi2Se3 layers can form rotationally aligned stacks with long-range crystallographic order. Our first-principles theoretical modeling predicts heterocrystal electronic band structures, which are quite distinct from those of the parent crystals, characterized with an indirect bandgap. Experiments reveal striking optical changes when Bi2Se3 is stacked layer by layer on monolayer MoS2, including 100% photoluminescence (PL) suppression, tunable transmittance edge (1.1→0.75 eV), suppressed Raman, and wide-band evolution of spectral transmittance. Disrupting the interface using a focused laser results in a marked the reversal of PL, Raman, and transmittance, demonstrating for the first time that in situ manipulation of interfaces can enable “reconfigurable” 2D materials. We demonstrate submicrometer resolution, “laser-drawing” and “bit-writing,” and novel laser-induced broadband light emission in these heterocrystal sheets. PMID:28740860

  10. Energy dissipation in intercalated carbon nanotube forests with metal layers

    USDA-ARS?s Scientific Manuscript database

    Vertically aligned carbon nanotube (CNT) forests were synthesized to study their quasi-static mechanical properties in a layered configuration with metallization. The top and bottom surfaces of CNT forests were metalized with Ag, Fe, and In using paste, sputtering, and thermal evaporation, respectiv...

  11. Real-time analysis of metals in stack gas using argon/air inductively coupled plasma with optical emission spectrometry

    NASA Astrophysics Data System (ADS)

    Meyer, Gerhard; Seltzer, Michael D.

    1999-02-01

    The design and operation of an instrument capable of continuous, real-time detection of hazardous air pollutant metals in the effluent of boilers, incinerators, and furnaces is reported. A commercially available inductively coupled argon plasma spectrometer, modified for introduction of sample air, provides sensitivity for several metals comparable to that of EPA-approved manual methods, with an analysis result reported every 1 to 2 minutes. Achievable detection limits for the present list of hazardous air pollutant metals range from 0.1 to 20 (mu) g/dry standard cubic meter. Air is isokinetically extracted from a stack or duct and introduced into the argon plasma through an innovative sample transport interface. Data is reported after every measurement cycle and immediately archived to a control computer, where the information is available to a local area network. The entire instrument is automated, and is enclosed in a shelter that can be placed as near as possible to the stack. The measurement of sample losses in the transport line is also discussed.

  12. Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

    NASA Astrophysics Data System (ADS)

    Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

    2014-01-01

    The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

  13. Charge Modeling for Metal Layer on Insulating Substrate

    NASA Astrophysics Data System (ADS)

    Okai, Nobuhiro; Yano, Tasuku; Sohda, Yasunari

    2011-06-01

    A charging model for magnification variation in the observation of a metal pattern on an insulating substrate using a scanning electron microscope is proposed. To calculate the time evolution of charging, we replace electron trajectory with current. Negative charging of the metal layer is observed and is caused by the current from the anode, which is set above the sample, to the metal layer. The origin of the current is tertiary electrons produced by backscattered electrons colliding with the anode. By controlling tertiary-electron trajectories through the application of bias voltage to the anode, the magnification variation can be reduced to almost zero.

  14. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    SciTech Connect

    Rout, G. C. E-mail: skp@iopb.res.in; Panda, S. K.

    2016-04-13

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  15. Two-dimensionally stacked heterometallic layers hosting a discrete chair dodecameric ring of water clusters: synthesis and structural study.

    PubMed

    Kenfack Tsobnang, Patrice; Wenger, Emmanuel; Biache, Coralie; Lambi Ngolui, John; Ponou, Siméon; Dahaoui, Slimane; Lecomte, Claude

    2014-10-01

    The stacked two-dimensional supramolecular compound catena-{Co(amp)3Cr(ox)3·6H2O} (amp = 2-picolylamine, ox = oxalate) has been synthesized from the bimolecular approach using hydrogen bonds. It is built from layers in which both Co(amp)(3+) (D) and Cr(ox)(3-) (A) ions are bonded in a repeating DADADA… pattern along the a and c axes by multiple hydrogen bonds. These layers host a well resolved R12 dodecameric discrete ring of water clusters built by six independent molecules located around the 2c centrosymmetric Wyckoff positions of the P21/n space group in which the compound crystallizes. These clusters are ranged along the [001] direction, occupy 733.5 Å(3) (22.0%) of the unit cell and have a chair conformation via 12 hydrogen bonds. The water molecules of the cluster are linked with stronger hydrogen bonds than those between the cluster and its host, which explains the single continuous step of the dehydration process of the compound.

  16. A further comparison of graphene and thin metal layers for plasmonics.

    PubMed

    He, Xiaoyong; Gao, Pingqi; Shi, Wangzhou

    2016-05-21

    Which one is much more suitable for plasmonic materials, graphene or metal? To address this problem well, the plasmonic properties of thin metal sheets at different thicknesses have been investigated and compared with a graphene layer. As demonstration examples, the propagation properties of insulator-metal-insulator and metamaterials (MMs) structures are also shown. The results manifest that the plasmonic properties of the graphene layer are comparable to that of thin metal sheets with the thickness of tens of nanometers. For the graphene MMs structure, by using the periodic stack structure in the active region, the resonant transmission strength significantly improves. At the optimum period number, 3-5 periods of graphene/SiO2, the graphene MMs structure manifests good frequency and amplitude tunable properties simultaneously, and the resonant strength is also strong with large values of the Q-factor. Therefore, graphene is a good tunable plasmonic material. The results are very helpful to develop novel graphene plasmonic devices, such as modulators, antenna and filters.

  17. A further comparison of graphene and thin metal layers for plasmonics

    NASA Astrophysics Data System (ADS)

    He, Xiaoyong; Gao, Pingqi; Shi, Wangzhou

    2016-05-01

    Which one is much more suitable for plasmonic materials, graphene or metal? To address this problem well, the plasmonic properties of thin metal sheets at different thicknesses have been investigated and compared with a graphene layer. As demonstration examples, the propagation properties of insulator-metal-insulator and metamaterials (MMs) structures are also shown. The results manifest that the plasmonic properties of the graphene layer are comparable to that of thin metal sheets with the thickness of tens of nanometers. For the graphene MMs structure, by using the periodic stack structure in the active region, the resonant transmission strength significantly improves. At the optimum period number, 3-5 periods of graphene/SiO2, the graphene MMs structure manifests good frequency and amplitude tunable properties simultaneously, and the resonant strength is also strong with large values of the Q-factor. Therefore, graphene is a good tunable plasmonic material. The results are very helpful to develop novel graphene plasmonic devices, such as modulators, antenna and filters.

  18. Method of adhesion between an oxide layer and a metal layer

    DOEpatents

    Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

    2004-09-14

    A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

  19. Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs.

    PubMed

    Takahashi, N; Watanabe, K; Taniguchi, T; Nagashio, K

    2015-05-01

    The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y(2)O(3) on h-BN using atomic layer deposition. The deposition of Y(2)O(3) on h-BN was confirmed without any buffer layer. An increase in the deposition temperature reduced the surface coverage. The deposition mechanism could be explained by the competition between the desorption and adsorption of the Y precursor on h-BN due to the polarization. Although a full surface coverage was difficult to achieve, the use of an oxidized metal seeding layer on h-BN resulted in a full surface coverage.

  20. Preparation of novel layer-stack hexagonal CdO micro-rods by a pre-oxidation and subsequent evaporation process

    SciTech Connect

    Peng, Kun; Jiang, Pan; Zhu, Jiajun; Zhou, Lingping; Li, Deyi

    2014-12-15

    Graphical abstract: Layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared. - Highlights: • Novel hexagonal layer-stack structure CdO micro-rods were synthesized by a thermal evaporation method. • The pre-oxidation, vapor pressure and substrate nature play a key role on the formation of CdO rods. • The formation mechanism of CdO micro-rods was explained. - Abstract: Novel layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared by pre-oxidizing Cd granules and subsequent thermal oxidation under normal atmospheric pressure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were performed to characterize the phase structure and microstructure. The pre-oxidation process, vapor pressure and substrate nature were the key factors for the formation of CdO micro-rods. The diameter of micro-rod and surface rough increased with increasing of thermal evaporation temperature, the length of micro-rod increased with the increasing of evaporation time. The formation of hexagonal layer-stack structure was explained by a vapor–solid mechanism.

  1. Chemistry of layered d-metal pnictide oxides and their potential as candidates for new superconductors

    PubMed Central

    Ozawa, Tadashi C; Kauzlarich, Susan M

    2008-01-01

    Layered d-metal pnictide oxides are a unique class of compounds which consist of characteristic d-metal pnictide layers and metal oxide layers. More than 100 of these layered compounds, including the recently discovered Fe-based superconducting pnictide oxides, can be classified into nine structure types. These structure types and the chemical and physical properties of the characteristic d-metal pnictide layers and metal oxide layers of the layered d-metal pnictide oxides are reviewed and discussed. Furthermore, possible approaches to design new superconductors based on these layered d-metal pnictide oxides are proposed. PMID:27877997

  2. Rare earth zirconium oxide buffer layers on metal substrates

    DOEpatents

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  3. Oxygen vacancy defect engineering using atomic layer deposited HfAlO{sub x} in multi-layered gate stack

    SciTech Connect

    Bhuyian, M. N. Misra, D.; Sengupta, R.; Vurikiti, P.

    2016-05-02

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlO{sub x} with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V{sup +}/V{sup 2+}, are the primary source of defects in these dielectrics. When Al is added in HfO{sub 2}, the V{sup +} type defects with a defect activation energy of E{sub a} ∼ 0.2 eV modify to V{sup 2+} type to E{sub a} ∼ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V{sup +} type defects are generated and E{sub a} reverts back to ∼0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO{sub 2} contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  4. Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors

    NASA Astrophysics Data System (ADS)

    Kamata, Hironobu; Kita, Koji

    2017-03-01

    We studied the dipole induced flatband voltage (VFB) shifts of Si MOS capacitors with Al2O3/SiO2/Al2O3/SiO2/Si laminated stacks ((Al2O3/SiO2)n/Si, n = 2) designed for a large positive shift of VFB. The VFB shift caused by each dipole layer was determined from capacitance-voltage characteristics by excluding the effect of fixed charges. Due to the additivity of multiple dipole layers in the laminated stack, a large VFB shift (>1 V) was observed. In our experimental condition, the dipole layers at Al2O3-on-SiO2 interfaces were selectively formed, while those at SiO2-on-Al2O3 interfaces were effectively suppressed. The validity of such additivity of VFB shifts induced by selectively formed dipole layers was also experimentally demonstrated for n ≥ 3 laminated stacks. An introduction of multiple dipole layers is applicable for a threshold voltage tuning in a wider range than the tuning with a single dipole layer.

  5. Single-layer transition metal sulfide catalysts

    DOEpatents

    Thoma, Steven G.

    2011-05-31

    Transition Metal Sulfides (TMS), such as molybdenum disulfide (MoS.sub.2), are the petroleum industry's "workhorse" catalysts for upgrading heavy petroleum feedstocks and removing sulfur, nitrogen and other pollutants from fuels. We have developed an improved synthesis technique to produce SLTMS catalysts, such as molybdenum disulfide, with potentially greater activity and specificity than those currently available. Applications for this technology include heavy feed upgrading, in-situ catalysis, bio-fuel conversion and coal liquefaction.

  6. Layered chiral metallic meta-materials

    NASA Astrophysics Data System (ADS)

    Zheludev, Nikolay I.; Papakostas, Aris; Potts, Adrian W.; Coles, Harry J.; Bagnall, Darren M.

    2002-06-01

    Using electron beam lithographic techniques we have manufactured left and right-handed forms of an artificial medium consisting of high densities of microscopic planar chiral metallic objects distributed regularly in a plane. In this artificial medium we have for the first time observed optical manifestations of planar chirality in the form of handedness-sensitive rotation of the polarization state and elliptization of visible light diffracted from the structure. Applications of such media in functional materials are discussed.

  7. Novel Stack Structure of Magnetic Tunnel Junction with MgO Tunnel Barrier Prepared by Oxidation Methods: Preferred Grain Growth Promotion Seed Layers and Bi-layered Pinned Layer

    NASA Astrophysics Data System (ADS)

    Choi, Young-suk; Tsunematsu, Hiroshi; Yamagata, Shinji; Okuyama, Hiroki; Nagamine, Yoshinori; Tsunekawa, Koji

    2009-12-01

    Despite superior compatibility to mass-production, magnetic tunnel junction (MTJ) with MgO barrier prepared by oxidation process (MgOx) has shown unacceptable magnetotransport properties for proper operation of spintronics devices because poor crystalline MgOx cannot properly provide a template for crystallization of amorphous CoFeB layers, thus lack of pseudo-epitaxy in overall. We report novel stack structure for MgOx-based MTJ to assure acceptable magnetotransport properties: insertion of preferred-grain-growth-promotion (PGGP) seed layer and bi-layered ferromagnetic pinned layer (bi-PL) to induce preferred grain growth in MgOx and crystallization of CoFeB layers at higher temperature annealing. Microstructure analysis confirms highly crystalline MgOx in pseudo-epitaxy with fully crystallized CoFeB via PGGP by high temperature annealing, attributed to enhanced thermal stability of bi-PL. Tunneling magnetoresistance (TMR) 132.6% at resistance-area product (RA) 1.2 Ω µm2 and 253% at 5.9 Ω µm2 from novel MTJ stack successfully satisfy specifications for spintronics devices.

  8. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  9. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    NASA Astrophysics Data System (ADS)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  10. Method of depositing buffer layers on biaxially textured metal substrates

    DOEpatents

    Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  11. Effect of layered manufacturing techniques, alloy powders, and layer thickness on metal-ceramic bond strength.

    PubMed

    Ekren, Orhun; Ozkomur, Ahmet; Ucar, Yurdanur

    2017-07-06

    Direct metal laser sintering (DMLS) and direct metal laser melting (DMLM) have become popular for fabricating the metal frameworks of metal-ceramic restorations. How the type of layered manufacturing device, layer thickness, and alloy powder may affect the bond strength of ceramic to metal substructure is unclear. The purpose of this in vitro study was to evaluate the bond strength of dental porcelain to metal frameworks fabricated using different layered manufacturing techniques (DMLS and DMLM), Co-Cr alloy powders, and layer thicknesses and to evaluate whether a correlation exists between the bond strength and the number of ceramic remnants on the metal surface. A total of 75 bar-shaped metal specimens (n=15) were fabricated using either DMLS or DMLM. The powder alloys used were Keramit NP-S and EOS-Cobalt-Chrome SP-2 with layer thicknesses of 20 μm and 30 μm. After ceramic application, the metal-ceramic bond strength was evaluated with a 3-point-bend test. Three-way ANOVA followed by the Tukey honest significance difference test were used for statistical analysis (α=.05). De-bonding surface microstructure was observed with scanning electron microscopy. Energy dispersive spectroscopy analysis was conducted to evaluate the correlation between ceramic remnants on the metal surface and bond strength values. The mean bond strength value of DMLS was significantly higher than that of DMLM. While no statistically significant difference was found between layer thicknesses, alloy powders closely affected bond strength. Statistical comparisons revealed that the highest bond strength could be achieved with DMLS-Cobalt-Chrome SP2-20μm, and the lowest bond strength was observed in DMLS-Keramit NP-S-20μm (P≤.05). No correlation was found between porcelain remnants on the metal surface and bond strength values. The layered manufacturing device and the alloy powders evaluated in the current study closely affected the bond strength of dental porcelain to a metal framework

  12. Thermodynamics of elastic strength of the metal surface layer

    NASA Astrophysics Data System (ADS)

    Andreev, Yu. Ya.; Kiselev, D. A.

    2013-07-01

    This paper presents a physicochemical model that establishes a connection between the elastic strength of the surface layer (SL) of metal and its surface Gibbs energy. The elastic limit of SL along the low-index face of the metal single crystal under stress during the transition from elastic to plastic deformation was calculated. Calculation shows that the elastic limit of metal SL with fcc and bcc structures is approximately three orders of magnitude higher than the yield strength of these metals in bulk and close to nanohardness of the metals, in particular; for Cu(111) и Al(111), it is 5.3 and 2.8 GPa, respectively. In the light of the proposed model, the effect of lowering the elastic strength of metal SL due to adsorption of surfactant is formulated.

  13. Methods of Fabricating a Layer of Metallic Glass-Based Material Using Immersion and Pouring Techniques

    NASA Technical Reports Server (NTRS)

    Hofmann, Douglas (Inventor)

    2015-01-01

    Systems and methods in accordance with embodiments of the invention implement layers of metallic glass-based materials. In one embodiment, a method of fabricating a layer of metallic glass includes: applying a coating layer of liquid phase metallic glass to an object, the coating layer being applied in a sufficient quantity such that the surface tension of the liquid phase metallic glass causes the coating layer to have a smooth surface; where the metallic glass has a critical cooling rate less than 1000 K/s; and cooling the coating layer of liquid phase metallic glass to form a layer of solid phase metallic glass.

  14. Indium gallium zinc oxide layer used to decrease optical reflection loss at intermediate adhesive region for fabricating mechanical stacked multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Sameshima, Toshiyuki; Nimura, Takeshi; Sugawara, Takashi; Ogawa, Yoshihiro; Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko

    2017-01-01

    Reduction of optical reflection loss is discussed in three mechanical stacked samples: top crystalline silicon and bottom crystalline germanium substrates, top crystalline GaAs and bottom crystalline silicon substrates, and top crystalline GaP and bottom crystalline silicon substrates using an epoxy-type adhesive with a reflective index of 1.47. Transparent conductive Indium gallium zinc oxide (IGZO) layers with a refractive index of 1.85 were used as antireflection layers. IGZO layers were formed on the bottom surface of the top substrate and the top surface of the bottom substrate of the three stacked samples with thicknesses of 188, 130, and 102 nm. The insertion of IGZO layers decreased the optical reflectivity of the stacked samples. The IGZO layers provided high effective optical absorbency of bottom substrates of 0.925, 0.943, and 0.931, respectively, for light wavelength regions for light in which the top substrates were transparent and the bottom substrates were opaque.

  15. The Thermomagnetic Instability in Superconducting Films with Adjacent Metal Layer

    NASA Astrophysics Data System (ADS)

    Vestgården, J. I.; Galperin, Y. M.; Johansen, T. H.

    2013-12-01

    Dendritic flux avalanches is a frequently encountered consequence of the thermomagnetic instability in type-II superconducting films. The avalanches, which are potentially harmful for superconductor-based devices, can be suppressed by an adjacent normal metal layer, even when the two layers are not in thermal contact. The suppression of the avalanches in this case is due to so-called magnetic braking, caused by eddy currents generated in the metal layer by propagating magnetic flux. We develop a theory of magnetic braking by analyzing coupled electrodynamics and heat flow in a superconductor-normal metal bilayer. The equations are solved by linearization and by numerical simulation of the avalanche dynamics. We find that in an uncoated superconductor, even a uniform thermomagnetic instability can develop into a dendritic flux avalanche. The mechanism is that a small non-uniformity caused by the electromagnetic non-locality induces a flux-flow hot spot at a random position. The hot spot quickly develops into a finger, which at high speeds penetrates into the superconductor, forming a branching structure. Magnetic braking slows the avalanches, and if the normal metal conductivity is sufficiently high, it can suppress the formation of the dendritic structure. During avalanches, the braking by the normal metal layer prevents the temperature from exceeding the transition temperature of the superconductor. Analytical criteria for the instability threshold are developed using the linear stability analysis. The criteria are found to match quantitatively the instability onsets obtained in simulations.

  16. Contacts and transport characteristics of few-layer transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Wang, Junjie; Li, Jing; Shevrin, Jacob; Nguyen, An; Mallouk, Tom; Zhu, J.; Rhodes, Daniel; Balicas, Luis; Watanabe, K.; Taniguchi, T.

    2014-03-01

    Two-dimensional layered transition metal dichalcogenides (TMDs) are potentially useful for electronic and optoelectronic applications. However, the lack of reliable methods to make ohmic contacts has been a major challenge. This work addresses two aspects of this challenge, i.e. interface cleanness and conductivity of the material in the contact area. Using gentle Ar ion milling immediately before the deposition of metal electrodes, we can completely remove polymer residue from prior lithography without significantly damaging the few-layer TMD sheet. Gate stacks made of Au and HfO2 films can inject carriers up to 3 ×1013 cm-2. We make van der Pauw devices of few-layer (< 5 L) TMD (MoS2, WS2, WSe2) sheets using Ti/Au contacts with area < 2 (um)2 and observe contact resistance less than 10 k Ω at high carrier densities, where the sheet conductance is well above 2e2/h. We eliminate hysteresis in the transfer curve of TMD devices by pulsing the gate voltage. Ambipolar conduction is observed in WSe2 devices, with an on/off ratio exceeding 106 for both electrons and holes. WSe2 devices supported on h-BN show field-effect (hole) mobility > 100 cm2/(Vs) at 300K. We discuss the effects of the various approaches taken above.

  17. Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

    NASA Astrophysics Data System (ADS)

    Island, Joshua O.; Molina-Mendoza, Aday J.; Barawi, Mariam; Biele, Robert; Flores, Eduardo; Clamagirand, José M.; Ares, José R.; Sánchez, Carlos; van der Zant, Herre S. J.; D'Agosta, Roberto; Ferrer, Isabel J.; Castellanos-Gomez, Andres

    2017-06-01

    The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-1D transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-1D properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

  18. Divergent layer topologies in divalent metal aliphatic dicarboxylate coordination polymers containing 3-pyridylmethylnicotinamide

    NASA Astrophysics Data System (ADS)

    White, Charmaine L.; Torres Salgado, Maria D.; Mizzi, Jessica E.; LaDuca, Robert L.

    2015-12-01

    Hydrothermal reaction of the requisite metal salt, an aliphatic dicarboxylic acid, and the hydrogen-bonding capable dipyridylamide ligand 3-pyridylmethylnicotinamide (3-pmna) resulted in four coordination polymers whose connectedness and layer topology depend on the metal coordination environment and dicarboxylate binding mode. These new crystalline phases were characterized by single crystal X-ray diffraction. [Cu(ox)(3-pmna)]n (1, ox = oxalate) manifests stacked 3-connected (6,3) herringbone layer motifs. {[Cd(mal)(3-pmna)(H2O)]·3H2O}n (2, mal = malonate) shows a 4-connected (4,4) grid topology with entrained water molecule trimeric chains in the interlamellar regions. {[Cd2(suc)2(3-pmna)(H2O)2]·3H2O}n (3, suc = succinate) possesses {Cd2O2} dimer-based [Cd(suc)]n layers pillared by 3-pmna ligands into a 5-connected sandwich motif with 4862 topology. {[Cd(glu)(3-pmna)(H2O)]·3H2O}n (4, glu = glutarate) manifests a rippled (4,4) grid topology. Luminescent behavior in the cadmium complexes is ascribed to intra-ligand molecular orbital transitions. Thermal decomposition behavior is also discussed herein.

  19. Asymmetric Flexible Supercapacitor Stack

    NASA Astrophysics Data System (ADS)

    Leela Mohana Reddy, A.; Estaline Amitha, F.; Jafri, Imran; Ramaprabhu, S.

    2008-04-01

    Electrical double layer supercapacitor is very significant in the field of electrical energy storage which can be the solution for the current revolution in the electronic devices like mobile phones, camera flashes which needs flexible and miniaturized energy storage device with all non-aqueous components. The multiwalled carbon nanotubes (MWNTs) have been synthesized by catalytic chemical vapor deposition technique over hydrogen decrepitated Mischmetal (Mm) based AB3 alloy hydride. The polymer dispersed MWNTs have been obtained by insitu polymerization and the metal oxide/MWNTs were synthesized by sol-gel method. Morphological characterizations of polymer dispersed MWNTs have been carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM and HRTEM). An assymetric double supercapacitor stack has been fabricated using polymer/MWNTs and metal oxide/MWNTs coated over flexible carbon fabric as electrodes and nafion® membrane as a solid electrolyte. Electrochemical performance of the supercapacitor stack has been investigated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.

  20. Gaussian beam incident on the one-dimensional diffraction gratings with the high-K metal gate stack structures.

    PubMed

    Kuo, Hung-Fei; Frederick

    2014-04-01

    Optical scatterometry has attracted extensive interest in extracting the geometric shape information of nanolithography patterns because of the trend of shrinking device size and complicated stack structure. RCWA is the numerical algorithm implemented in the current scatterometry tool to calculate the diffraction efficiency. However, the known weakness for the RCWA method is the analysis of metallic gratings illuminated by the TM wave. This research applies the FDTD method using the Gaussian beam excitation source to analyze the diffraction efficiency of HKMG gratings for the use in the optical scatterometry and verifies the numerical diffraction efficiency discrepancy between the Gaussian beam and plane wave excitation methods. The numerical study is carried out with the line/space nanolithography patterns on the HKMG process stacks at 45 nm node technology. The nanolithography patterns are modeled as 1-D surface relief gratings. The 0th order diffraction efficiency is analyzed as a function of CDs, SWAs, incident angles and pitches of the gratings. The study presents the impact of the polarizations of the incident waves on the diffraction efficiency. In addition, this research investigates the phase of the 0th diffraction order as a function of the SWAs and illustrates the corresponding SWA parameter effect on the phase distribution. This research suggests the minimum beam radius to converge the numerical diffraction efficiency using Gaussian beam excitation to it using the plan wave.

  1. Monolayer and/or few-layer graphene on metal or metal-coated substrates

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2015-04-14

    Disclosed is monolayer and/or few-layer graphene on metal or metal-coated substrates. Embodiments include graphene mirrors. In an example, a mirror includes a substrate that has a surface exhibiting a curvature operable to focus an incident beam onto a focal plane. A graphene layer conformally adheres to the substrate, and is operable to protect the substrate surface from degradation due to the incident beam and an ambient environment.

  2. PASSIVATION LAYER STABILITY OF A METALLIC ALLOY WASTE FORM

    SciTech Connect

    Williamson, M.; Mickalonis, J.; Fisher, D.; Sindelar, R.

    2010-08-16

    Alloy waste form development under the Waste Forms Campaign of the DOE-NE Fuel Cycle Research & Development program includes the process development and characterization of an alloy system to incorporate metal species from the waste streams generated during nuclear fuel recycling. This report describes the tests and results from the FY10 activities to further investigate an Fe-based waste form that uses 300-series stainless steel as the base alloy in an induction furnace melt process to incorporate the waste species from a closed nuclear fuel recycle separations scheme. This report is focused on the initial activities to investigate the formation of oxyhydroxide layer(s) that would be expected to develop on the Fe-based waste form as it corrodes under aqueous repository conditions. Corrosion tests were used to evaluate the stability of the layer(s) that can act as a passivation layer against further corrosion and would affect waste form durability in a disposal environment.

  3. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-09

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.

  4. Advanced optical interference filters based on metal and dielectric layers.

    PubMed

    Begou, Thomas; Lemarchand, Fabien; Lumeau, Julien

    2016-09-05

    In this paper, we investigate the design and the fabrication of an advanced optical interference filter based on metal and dielectric layers. This filter respects the specifications of the 2016 OIC manufacturing problem contest. We study and present all the challenges and solutions that allowed achieving a low deviation between the fabricated prototype and the target.

  5. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  6. Trap-limited photovoltage in ultrathin metal oxide layers

    NASA Astrophysics Data System (ADS)

    Dittrich, Th.; Duzhko, V.; Koch, F.; Kytin, V.; Rappich, J.

    2002-04-01

    Photovoltage signals were observed at ultrathin metal oxide (TiO2,Cu2O, ZnO)/ metal structures by transient and spectral photovoltage (PV) techniques. The sign, the spectral behavior and the time-dependent relaxation of the PV are determined by the nature of the traps in the metal oxide layers. At lower temperatures, the relaxation of the PV signal in TiO2 layers is controlled by recombination due to the overlap of the wave functions of the spatially separated electrons and holes. At higher temperatures, thermal emission accelerates the recombination process. The Bohr radius of trapped holes, the tail of the exponential approximation of electronic states distribution above the valence band, the density of states at the valence band edge were obtained for TiO2 layers by using the proposed model of trap limited PV. The concept of trap limited PV gives a general tool for the investigation of excess carrier separation in ultrathin metal oxide or semiconductor layers with trap states.

  7. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  8. Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

    NASA Astrophysics Data System (ADS)

    Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

    2017-06-01

    The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

  9. {l_angle}110{r_angle} symmetric tilt grain-boundary structures in fcc metals with low stacking-fault energies

    SciTech Connect

    Rittner, J.D.; Seidman, D.N.

    1996-09-01

    Twenty-one {l_angle}110{r_angle} symmetric tilt grain boundaries (GB{close_quote}s) are investigated with atomistic simulations, using an embedded-atom method (EAM) potential for a low stacking-fault energy fcc metal. Lattice statics simulations with a large number of initial configurations are used to identify both the equilibrium and metastable structures at 0 K. The level of difficulty in finding the equilibrium structures is quantitatively assessed. The stability of the structures at an elevated temperature is investigated by Monte Carlo annealing. A form of GB dissociation is identified in a number of the boundaries. These structures are used to develop a dislocation model of GB dissociation by stacking-fault emission. Also, an attempt is made to apply the structural unit model (SUM) to the simulated boundaries and problems that are encountered for GB structures in low stacking-fault energy metals are enumerated and discussed. {copyright} {ital 1996 The American Physical Society.}

  10. Perfect polar stacking of parallel beloamphiphile layers. Synthesis, structure and solid-state optical properties of the unsymmetrical acetophenone azine DCA.

    PubMed

    Glaser, Rainer; Knotts, Nathan; Yu, Ping; Li, Linghui; Chandrasekhar, Meera; Martin, Christopher; Barnes, Charles L

    2006-06-21

    Extraordinary high degrees of polar order can be achieved by a rational design that involves the polar stacking of parallel beloamphiphile monolayers (PBAM). This strategy is exemplified by the acetophenone azines MCA (4-methoxy-4'-chloroacetophenone azine) and DCA (4-decoxy-4'-chloroacetophenone azine). The beloamphiphile design aims to achieve strong lateral interactions by way of arene-arene, azine-azine, arene-azine and halogen-bonding interactions. Dipole-induced interactions and halogen bonding dominate interlayer interactions and halogen bonding is shown to effect the layer stacking. Crystals of DCA contain PBAMs with perfect polar order and perfect polar layer stacking, while crystals of MCA features perfect polar order only in one of two layers and layer stacking is polar but not entirely perfect. We report the synthesis of the beloamphiphile DCA, its crystal structure, and we present a comparative discussion of the structures and intermolecular interactions of MCA and DCA. Absorbance and photoluminescence measurements have been carried out for solutions of DCA and for DCA crystals. DCA exhibits a broad emission centered at 2.5 eV when excited with UV radiation. The nonlinear optical response was studied by measuring second harmonic generation (SHG). Strong SHG signals have been observed due to the polar alignment and the DCA crystal's NLO response is 34 times larger than that of urea. Optimization of the beloamphiphile and systematic SAR studies of the polar organic crystals, which are now possible for the very first time, will further improve the performance of this new class of functional organic materials. The materials are organic semiconductors and show promise as blue emitters, as nonlinear optical materials and as OLED materials.

  11. Meteoric metal layers in the atmosphere of Mars

    NASA Astrophysics Data System (ADS)

    Plane, John; Whalley, Charlotte

    Radio occultation measurements from several spacecraft (e.g., Mars Express, Mars Global Sur-veyor) have revealed the presence of a "third" ion layer in the Martian atmosphere, which occurs sporadically around 90 km. Because this is the aerobraking region of the atmosphere, and the layers resemble sporadic E layers observed in the terrestrial atmosphere, it has been proposed that these layers consist of metallic ions (principally Fe+ and Mg+ ). A major problem with this hypothesis is that we have shown recently that metallic ions re-combine rapidly in a CO2 -rich atmosphere, both because of the efficiency of CO2 as the "third body" and because of the very low temperatures (about 140 K). In fact, both Fe+ and Mg+ form CO2 cluster ions about 200 times faster than current Mars models predict. These cluster ions should rapidly be destroyed by dissociative recombination with electrons, so that sporadic layers containing metallic ions would have lifetimes of only minutes. We will present a new laboratory study of all the reactions that appear to be required to solve this problem. Most importantly, we will show that the reactions of molecular magnesium ions (Mg+ .CO2 , MgO2 + and MgO+ ) with atomic O are about 20 times faster than expected. The laboratory will then be used to construct a new model of the Martian upper atmosphere, which demonstrates that the sporadic third layers must largely be composed of Mg+ and not Fe+ . These layers should then have lifetimes of more than 10 hours, in accord with observations from Mars Express made on successive orbits.

  12. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  13. Optimisation on the two-layer stack gamma detectors of CsI(Tl) coupled with a pin photodiode for non-destructive testing.

    PubMed

    Bai, Jin Hyoung; Whang, Joo Ho

    2011-07-01

    This paper proposed the two-layer stack scintillator-coupled photodiode detector to improve the measurement accuracy of the gamma-ray scanning. Both MCNPX and DETECT97 code were used to design the detector. The two manufactured two-layer stack gamma detectors were used to measure the density profile of the distillation column of the radiographic non-intrusive process diagnostic area. To compare the measurement accuracy of the density profile through the non-destructive transmission test, the relative error of the four fluids used for the process diagnostics was analysed. To summarise the measurement results with regard to the relative error of the NaI(Tl) detector and the manufactured detector by material as well as the total relative error, the total relative error of the NaI(Tl) detector was about 15.7 %, whereas that of the two-layer stack CsI(Tl) with photodiode detectors were about 5 %. This paper confirmed that the measurement accuracy of the detector proposed was improved by about three times as compared with the NaI(Tl) detector mostly used for non-destructive testing.

  14. In situ photocurrent spectra measurements during growth of three-dye-stacked structures by the liquid-phase molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Yoshimura, Tetsuzo; Bai, Shi; Tateno, Hiroyuki; Yoshino, Chie

    2017-07-01

    Three-dye-stacked structures were grown on ZnO surfaces by the liquid-phase molecular layer deposition (LP-MLD) using electron-accepting p-type dyes of rose bengal (RB) and eosine (EO), and an electron-donating n-type dye of crystal violet (CV) as source molecules. It was found that the dye adsorption strength is strong for combinations of p-n, and weak for combinations of p-p and n-n, which satisfies requirements for the source molecules in LP-MLD when dyes are provided with a sequence of p-n-p-n- on n-type ZnO. Surface potential and photoluminescence measurements revealed that monomolecular-step growth is achieved in LP-MLD for growth of the three-dye-stacked structure of [ZnO/RB/CV/EO]. To evaluate the sensitization effects of multi-dye-stacked structures, photocurrent spectra induced in the dye-sensitized ZnO layers were measured in situ in each growth step of the dye molecule adsorption. In step 1, p-type RB was adsorbed onto an n-type ZnO surface to induce a photocurrent spectrum in a range of 400-580 nm. In step 2, n-type CV was provided to connect it to p-type RB. Then, photocurrents attributed to CV were superposed to the photocurrent spectrum attributed to RB, raising photocurrents in the longer wavelength region. In step 3, p-type EO was provided to grow the three-dye-stacked structure of [ZnO/RB/CV/EO]. This structure enhanced the photocurrents and, at the same time, widened the photocurrent spectrum extending from 390 nm to 610 nm, which is regarded as a superposition of RB, CV, and EO spectra, suggesting that the multi-dye-stacked structure acts as a light-harvesting antenna to enhance the sensitization effect on ZnO.

  15. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    DOEpatents

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  16. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    SciTech Connect

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  17. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Atiya, G.; Cohen-Hyams, Z.; Weindling, S.; Ankonina, G.; Salzman, J.; Kaplan, W. D.; Eisenstein, G.

    2015-10-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  18. Photoluminescence emission from Alq3 organic layer in metal-Alq3-metal plasmonic structure

    NASA Astrophysics Data System (ADS)

    Huang, Bohr-Ran; Liao, Chung-Chi; Fan, Wan-Ting; Wu, Jin-Han; Chen, Cheng-Chang; Lin, Yi-Ping; Li, Jung-Yu; Chen, Shih-Pu; Ke, Wen-Cheng; Chen, Nai-Chuan

    2014-06-01

    The emission properties of an organic layer embedded in a metal-organic-metal (MOM) structure were investigated. A partially radiative odd-SPW as well as a non-radiative even-SPW modes are supported by hybridization of the SPW modes on the opposite organic/metal interface in the structure. Because of the competition by this radiative SPW, the population of excitons that recombine to form non-radiative SPW should be reduced. This may account for why the photoluminescence intensity of the MOM sample is higher than that of an organic-metal sample even though the MOM sample has an additional metal layer that should intuitively act as a filter.

  19. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2015-04-28

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  20. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2013-10-22

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  1. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2014-09-16

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  2. Highly Conductive Transparent and Flexible Electrodes Including Double-Stacked Thin Metal Films for Transparent Flexible Electronics.

    PubMed

    Han, Jun Hee; Kim, Do-Hong; Jeong, Eun Gyo; Lee, Tae-Woo; Lee, Myung Keun; Park, Jeong Woo; Lee, Hoseung; Choi, Kyung Cheol

    2017-05-17

    To keep pace with the era of transparent and deformable electronics, electrode functions should be improved. In this paper, an innovative structure is suggested to overcome the trade-off between optical and electrical properties that commonly arises with transparent electrodes. The structure of double-stacked metal films showed high conductivity (<3 Ω/sq) and high transparency (∼90%) simultaneously. A proper space between two metal films led to high transmittance by an optical phenomenon. The principle of parallel connection allowed the electrode to have high conductivity. In situ fabrication was possible because the only materials composing the electrode were silver and WO3, which can be deposited by thermal evaporation. The electrode was flexible enough to withstand 10 000 bending cycles with a 1 mm bending radius. Furthermore, a few μm scale patterning of the electrode was easily implemented by using photolithography, which is widely employed industrially for patterning. Flexible organic light-emitting diodes and a transparent flexible thin-film transistor were successfully fabricated with the proposed electrode. Various practical applications of this electrode to new transparent flexible electronics are expected.

  3. Effect of metallation, substituents and inter/intra-molecular polarization on electronic couplings for hole transport in stacked porphyrin dyads.

    PubMed

    Hernández-Fernández, F; Pavanello, M; Visscher, L

    2016-08-03

    We carried out a systematic study of the hole transport properties for a series of symmetrically stacked porphyrin dimers. In the first part of this study, we evaluated the sensitivity of electronic couplings to orbital relaxation due to molecular ionization and intermolecular interactions for a series of halogenated porphyrins. The effect of polarization was estimated by comparing electronic couplings from fragment orbital density functional theory (FODFT) and frozen density embedding electron transfer (FDE-CT). For the dimers considered, the effect of polarization was estimated to be less than 20%, in line with previous studies on different molecular dimers. Thus, we decided to employ a computationally cheaper FODFT method to continue our study of the effect of metals and substituents on the electronic couplings for hole transfer. We find that, compared to the non-metallated porphyrins, Ni, Fe and Pt significantly reduce the coupling, while Zn, Ti, Cd and Pd increase it. The effect of substituents was studied on a series of meso-substituted porphyrins (meso-tetrapyridineporphyrin, meso-tetraphenylporphyrin and derivatives) for which we could relate a reduction of the coupling to steric effects that reduce the overlap between the frontier orbitals of the monomers.

  4. Anisotropy in layered half-metallic Heusler alloy superlattices

    NASA Astrophysics Data System (ADS)

    Azadani, Javad G.; Munira, Kamaram; Romero, Jonathon; Ma, Jianhua; Sivakumar, Chockalingam; Ghosh, Avik W.; Butler, William H.

    2016-01-01

    We show that when two Heusler alloys are layered in the [001], [110], or [111] directions for various thicknesses to form a superlattice, the Slater-Pauling rule may still be satisfied and the resulting superlattice is often half-metallic with gaps comparable to or larger than those of its constituents. In addition, uniaxial magnetocrystalline anisotropy is induced because of the differences in the electronic structure of the two Heuslers in the superlattice. Various full-full, full-half, and half-half Heusler superlattices are studied, and potential half-metallic superlattices with perpendicular magnetocrystalline anisotropy are identified.

  5. Anisotropy in layered half-metallic Heusler alloy superlattices

    SciTech Connect

    Azadani, Javad G.; Munira, Kamaram; Sivakumar, Chockalingam; Butler, William H.; Romero, Jonathon; Ma, Jianhua; Ghosh, Avik W.

    2016-01-28

    We show that when two Heusler alloys are layered in the [001], [110], or [111] directions for various thicknesses to form a superlattice, the Slater-Pauling rule may still be satisfied and the resulting superlattice is often half-metallic with gaps comparable to or larger than those of its constituents. In addition, uniaxial magnetocrystalline anisotropy is induced because of the differences in the electronic structure of the two Heuslers in the superlattice. Various full-full, full-half, and half-half Heusler superlattices are studied, and potential half-metallic superlattices with perpendicular magnetocrystalline anisotropy are identified.

  6. Thickness and conductivity of metallic layers from eddy current measurements

    NASA Astrophysics Data System (ADS)

    Moulder, John C.; Uzal, Erol; Rose, James H.

    1992-06-01

    A robust method that uses eddy current measurements to determine the conductivity and thickness of uniform conductive layers is described. The method was tested by estimating the conductivity and thickness of aluminum and copper layers on various substrate metals, and the thickness and conductivity of free-standing foils of aluminum. The electrical impedance was measured for air-core and ferrite-core coils in the presence and absence of the layer for frequencies ranging from 1 kHz to 1 MHz. The thickness and conductivity of the metal layers were inferred by comparing the data taken with air-core coils to the exact theoretical solution of Dodd and Deeds [J. Appl. Phys. 39, 2829 (1968)] using a least-squares norm. The inferences were absolute in the sense that no calibration was used. We report experimental tests for eight different thicknesses of aluminum (20-500 μm) in free space and on four different substrates: Ti-6Al-4V, 304 stainless steel, copper, and 7075 aluminum, and for five different thicknesses of copper (100-500 μm) on 304 stainless steel. Both the thickness and conductivity could be determined accurately (typically within 10%) and simultaneously if the ratio of the layer thickness to the coil radius was between 0.20 and 0.50. For thinner samples either the thickness could be found if the conductivity were known, or vice versa.

  7. Hydrogen permeation resistant layers for liquid metal reactors

    SciTech Connect

    McGuire, J.C.

    1980-03-01

    Reviewing the literature in the tritium diffusion field one can readily see a wide divergence in results for both the response of permeation rate to pressure, and the effect of oxide layers on total permeation rates. The basic mechanism of protective oxide layers is discussed. Two coatings which are less hydrogen permeable than the best naturally occurring oxide are described. The work described is part of an HEDL-ANL cooperative research program on Tritium Permeation in Liquid Metal Cooled Reactors. This includes permeation work on hydrogen, deuterium, and tritium with the hydrogen-deuterium research leading to the developments presented.

  8. Layered Post-Transition-Metal Dichalcogenides (X-M-M-X) and Their Properties.

    PubMed

    Luxa, Jan; Wang, Yong; Sofer, Zdenek; Pumera, Martin

    2016-12-23

    A(III) B(VI) chalcogenides are an interesting group of layered semiconductors with several attractive properties, such as tunable band gaps and the formation of solid solutions. Unlike the typically sandwiched structure of transition-metal dichalcogenides, A(III) B(VI) layered chalcogenides with hexagonal symmetry are stacked through the X-M-M-X motif, in which M is gallium and indium, and X is sulfur, selenium, and tellurium. In view of the inadequate study of the electrochemical properties and great interest in layered materials towards energy-related research, herein the inherent electrochemistry of GaS, GaSe, GaTe, and InSe has been studied, as well as the exploration of their potential as hydrogen evolution reaction (HER) electrocatalysts. All four materials show redox peaks during cyclic voltammetry measurements. Furthermore, insights into catalysis of the HER are provided; these indicate the conductivity and number of active sites of the materials. All of these findings have important implications on their possible applications.

  9. Sloshing instability and electrolyte layer rupture in liquid metal batteries

    NASA Astrophysics Data System (ADS)

    Weber, Norbert; Beckstein, Pascal; Herreman, Wietze; Horstmann, Gerrit Maik; Nore, Caroline; Stefani, Frank; Weier, Tom

    2017-05-01

    Liquid metal batteries (LMBs) are discussed today as a cheap grid scale energy storage, as required for the deployment of fluctuating renewable energies. Built as stable density stratification of two liquid metals separated by a thin molten salt layer, LMBs are susceptible to short-circuit by fluid flows. Using direct numerical simulation, we study a sloshing long wave interface instability in cylindrical cells, which is already known from aluminium reduction cells. After characterising the instability mechanism, we investigate the influence of cell current, layer thickness, density, viscosity, conductivity and magnetic background field. Finally we study the shape of the interface and give a dimensionless parameter for the onset of sloshing as well as for the short-circuit.

  10. Lipid Layer-based Corrosion Monitoring on Metal Substrates

    DTIC Science & Technology

    2013-04-01

    phospholipid bilayer works with protein complexes to regulate material transport, as well as to send and receive information between cells. While...disrupting the bilayer (9). If metal oxides are capable of disrupting and causing degradation of a phospholipid layer, it may be possible to...Strittmatter, P. Formation and Properties of 1000-Å-Diameter, Singel- Bilayer Phospholipid Vesicles. Proc. Natl. Acad. Sci. USA 1979, 76, 145–149. 6

  11. Metal-Organic Frameworks for Thin-Layer Chromatographic Applications.

    PubMed

    Schenk, Claudia; Kutzscher, Christel; Drache, Franziska; Helten, Stella; Senkovska, Irena; Kaskel, Stefan

    2017-01-25

    Preparation of thin-layer chromatographic (TLC) plates based on metal-organic frameworks (MOFs) as porous stationary phases is described. DUT-67 (DUT = Dresden University of Technology), a zirconium based MOF, was used in combination with a fluorescent indicator as stationary phase for analyzing a small selection of a wide spectrum of relevant analytes. The successful separation of benzaldehyde from trans-cinnamaldehyde and 4-aminophenol from 2-aminotoluene is reported as a model system using optimized eluent mixtures containing acetic acid.

  12. Eight combinatorial stacks of three layers of carbon black/PVA-carbon black/EVA composite as a vapor detector array.

    PubMed

    Setasuwon, Paisan; Menbangpung, Laongdao; Sahasithiwat, Somboon

    2008-01-01

    Eight specimens of combinatorial stacking of 3 layers of carbon black/PVA-carbon black/EVA composite were prepared on substrate with interdigitated electrode. They were subjected to 15 solvent vapors with dielectric constants from 2-80,and their responses were processed for calculation of resolution factor (RF). If the detector responses are assumed to have a normal distribution, RF values of 1.0, 2.0, and 3.0 indicate the 76, 92, and 98% confidence, respectively, of correctly identifying one analyte from the other of a specific pair. Of the possible 105 pairs, 99 pairs have RF values of more than 3, 5 pairs have RF values of more than 1, and only one pair has an RF value of less than 1. The resolution factor was affected by both the dielectric constant and boiling point of tested solvents. Employing Fisher linear discrimination improves all RF values greater than 3, making confidence in resolving the pair reach almost 100%. Contributions from each combination were studied, and it was shown that diversity by combinatorial stacking is essential to the improvement of RF value. All of these capabilities are derived from combinatorial stacking of 3 layers of just two simple carbon black/polymer composites.

  13. Tailoring capping layers to reduce stress gradients in copper metallization

    NASA Astrophysics Data System (ADS)

    Murray, Conal E.; Priyadarshini, Deepika; Nguyen, Son; Ryan, E. Todd

    2016-12-01

    Capping layers for back-end-of-line metallization, which primarily serve as diffusion barriers to prevent contamination, also play a role in mitigating electromigration in the underlying conductive material. Stress gradients can be generated in copper metallization due to the conditions associated with the capping process. To study the effects of deposition and subsequent annealing on the mechanical response of copper films with various capping schemes, we employed a combination of conventional and glancing incidence X-ray diffraction techniques to quantify the stress gradient maxima. The Cu films with dielectric caps, such as silicon nitride, can exhibit large gradients that decrease slightly with thermal cycling. However, Co and TaN-based metallic capping layers create significantly lower stress gradient maxima in copper features both before and after annealing. The different evolution of stress gradients in Cu films with dielectric and metallic caps due to thermal cycling reveals the interaction of dislocation-mediated, plastic deformation with the cap/Cu interface.

  14. Layer-selective half-metallicity in bilayer graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Jeon, Gi Wan; Lee, Kyu Won; Lee, Cheol Eui

    2015-05-01

    Half-metallicity recently predicted in the zigzag-edge graphene nanoribbons (ZGNRs) and the hydrogenated carbon nanotubes (CNTs) enables fully spin-polarized electric currents, providing a basis for carbon-based spintronics. In both carbon systems, the half-metallicity arises from the edge-localized electron states under an electric field, lowering the critical electric field Dc for the half-metallicity being an issue in recent works on ZGNRs. A properly chosen direction of the electric field alone has been predicted to significantly reduce Dc in the hydrogenated CNTs, which in this work turned out to be the case in narrow bilayer ZGNRs (biZGNRs). Here, our simple model based on the electrostatic potential difference between the edges predicts that for wide biZGNRs of width greater than ~2.0 nm (10 zigzag carbon chains), only one layer of the biZGNRs becomes half-metallic leaving the other layer insulating as confirmed by our density functional theory (DFT) calculations. The electric field-induced switching of the spin-polarized current path is believed to open a new route to graphene-based spintronics applications.

  15. Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

    NASA Astrophysics Data System (ADS)

    Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

    2017-02-01

    Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

  16. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

    PubMed Central

    Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju; Ryu, Gyeong Hee; Lee, Su Jeong; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Chang Wan; Woo, Whang Je; Choi, Taejin; Jung, Hanearl; Lee, Han-Bo-Ram; Myoung, Jae-Min; Im, Seongil; Lee, Zonghoon; Ahn, Jong-Hyun; Park, Jusang; Kim, Hyungjun

    2016-01-01

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 108. This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics. PMID:26725854

  17. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Kim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju; Ryu, Gyeong Hee; Lee, Su Jeong; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Chang Wan; Woo, Whang Je; Choi, Taejin; Jung, Hanearl; Lee, Han-Bo-Ram; Myoung, Jae-Min; Im, Seongil; Lee, Zonghoon; Ahn, Jong-Hyun; Park, Jusang; Kim, Hyungjun

    2016-01-01

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 108. This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics.

  18. Exceeding 4% external quantum efficiency in ultraviolet organic light-emitting diode using PEDOT:PSS/MoOx double-stacked hole injection layer

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaowen; You, Fengjiao; Liu, Shiqi; Mo, Bingjie; Zhang, Zheling; Xiong, Jian; Cai, Ping; Xue, Xiaogang; Zhang, Jian; Wei, Bin

    2017-01-01

    An effective and simple method has been explored to construct an efficient ultraviolet organic light-emitting diode (OLED) by incorporating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/MoOx double-stacked hole injection layer (HIL) and slightly retarding electron injection for achieving extremely balanced charge carriers. The device produces 4.6% external quantum efficiency with an attractive ultraviolet emission peak of 377 nm and full width at half maximum of 35 nm. Ultraviolet photoelectron spectroscopy and impedance spectroscopy analysis determine the substantially enhanced hole injection capacity of PEDOT:PSS/MoOx double-stacked HIL, which accordingly contributes to optimizing carrier balance. The results pave a way to advancing OLED in potential application towards short wavelength emission.

  19. Microstructure and Mechanical Properties of Nanostructured 1050/6061 Aluminum Alloy Fabricated by Four-Layer Stack Accumulative Roll-Bonding.

    PubMed

    Lee, Seong-Hee; Lee, Seong Ro

    2015-07-01

    An ultrafine grained AA1050/AA6061 Al alloy sheet was successfully fabricated by four-layer stack ARB process. The ARB of AA1050 and AA6061 alloy sheets was performed up to 3 cycles without a lubricant at ambient temperature. The sample fabricated by the ARB was a multi-layer aluminum alloy sheet in which AA1050 and AA6061 layers are alternately stacked. The layer thickness of the each alloy became thinner and elongated to the rolling direction with increasing the number of ARB cycles. The tensile strength increased with the ARB, it reached about 347 MPa which is almost 2.4 times that of the starting material. The grain size decreased with increasing of the number of ARB cycles, became about 190 nm in thickness after 3 cycles. The variation of mechanical properties with the ARB was similar to those of the other ARB processed materials. However, the texture development was different from those of the conventional ARB processed materials.

  20. Theoretical and Monte Carlo optimization of a stacked three-layer flat-panel x-ray imager for applications in multi-spectral medical imaging

    PubMed Central

    Maurino, Sebastian Lopez; Badano, Aldo; Cunningham, Ian A.; Karim, Karim S.

    2017-01-01

    We propose a new design of a stacked three-layer flat-panel x-ray detector for dual-energy (DE) imaging. Each layer consists of its own scintillator of individual thickness and an underlying thin-film-transistor-based flat-panel. Three images are obtained simultaneously in the detector during the same x-ray exposure, thereby eliminating any motion artifacts. The detector operation is two-fold: a conventional radiography image can be obtained by combining all three layers’ images, while a DE subtraction image can be obtained from the front and back layers’ images, where the middle layer acts as a mid-filter that helps achieve spectral separation. We proceed to optimize the detector parameters for two sample imaging tasks that could particularly benefit from this new detector by obtaining the best possible signal to noise ratio per root entrance exposure using well-established theoretical models adapted to fit our new design. These results are compared to a conventional DE temporal subtraction detector and a single-shot DE subtraction detector with a copper mid-filter, both of which underwent the same theoretical optimization. The findings are then validated using advanced Monte Carlo simulations for all optimized detector setups. Given the performance expected from initial results and the recent decrease in price for digital x-ray detectors, the simplicity of the three-layer stacked imager approach appears promising to usher in a new generation of multi-spectral digital x-ray diagnostics. PMID:28845080

  1. Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

    NASA Astrophysics Data System (ADS)

    Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

    2007-04-01

    The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

  2. Improved thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs

    SciTech Connect

    Cao, Yan-Qiang; Li, Xin; Zhu, Lin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-01-15

    The thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs were investigated. Compared to HfO{sub 2}/Al{sub 2}O{sub 3} gate dielectric, significant improvements in interfacial quality as well as electrical characteristics after postdeposition annealing are confirmed by constructing HfO{sub 2}/AlN dielectric stacks. The chemical states were carefully explored by the x-ray photoelectron spectroscopy, which indicates the AlN layers effectively prevent from the formation of defective native oxides at elevated temperatures. In addition, it is found that NH{sub 3} plasma during AlN plasma-enhanced atomic layer deposition also has the self-cleaning effect as Al(CH{sub 3}){sub 3} in removing native oxides. The passivating AlN layers suppress the formation of interfacial oxide and trap charge, leading to the decrease of capacitance equivalent thickness after annealing. Moreover, HfO{sub 2}/AlN/GaAs sample has a much lower leakage current density of 2.23 × 10{sup −4} A/cm{sup 2} than HfO{sub 2}/Al{sub 2}O{sub 3}/GaAs sample of 2.58 × 10{sup −2} A/cm{sup 2}. For the HfO{sub 2}/AlN/GaAs sample annealed at 500 °C, it has a lowest interface trap density value of 2.11 × 10{sup 11} eV{sup −1} cm{sup −2}. These results indicate that adopting HfO{sub 2}/AlN dielectric stacks may be a promising approach for the realization of high quality GaAs-based transistor devices.

  3. Enhancement of Thermal Conductance at Metal-Dielectric Interfaces Using Subnanometer Metal Adhesion Layers

    NASA Astrophysics Data System (ADS)

    Jeong, Minyoung; Freedman, Justin P.; Liang, Hongliang Joe; Chow, Cheng-Ming; Sokalski, Vincent M.; Bain, James A.; Malen, Jonathan A.

    2016-01-01

    We show that the use of subnanometer adhesion layers significantly enhances the thermal interface conductance at metal-dielectric interfaces. A metal-dielectric interface between Au and sapphire (Al2O3) is considered using Cu (low optical loss) and Cr (high optical loss) as adhesion layers. To enable high throughput measurements, each adhesion layer is deposited as a wedge such that a continuous range of thicknesses could be sampled. Our measurements of thermal interface conductance at the metal-Al2O3 interface made using frequency-domain thermoreflectance show that a 1-nm-thick adhesion layer of Cu or Cr is sufficient to enhance the thermal interface conductance by more than a factor of 2 or 4, respectively, relative to the pure Au/Al2O3 interface. The enhancement agrees with the diffuse-mismatch-model-based predictions of accumulated thermal conductance versus adhesion-layer thickness assuming that it contributes phonons with wavelengths less than its thickness, while those with longer wavelengths transmit directly from the Au.

  4. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    NASA Astrophysics Data System (ADS)

    ShuXiang, Zhang; Hong, Yang; Bo, Tang; Zhaoyun, Tang; Yefeng, Xu; Jing, Xu; Jiang, Yan

    2014-10-01

    ALD HfO2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D&A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D&A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme.

  5. Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

    SciTech Connect

    Akazawa, Housei Fukuda, Hiroshi

    2015-05-15

    We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on optical anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.

  6. Mesoporous layer-by-layer ordered nanohybrids of layered double hydroxide and layered metal oxide: highly active visible light photocatalysts with improved chemical stability.

    PubMed

    Gunjakar, Jayavant L; Kim, Tae Woo; Kim, Hyo Na; Kim, In Young; Hwang, Seong-Ju

    2011-09-28

    Mesoporous layer-by-layer ordered nanohybrids highly active for visible light-induced O(2) generation are synthesized by self-assembly between oppositely charged 2D nanosheets of Zn-Cr-layered double hydroxide (Zn-Cr-LDH) and layered titanium oxide. The layer-by-layer ordering of two kinds of 2D nanosheets is evidenced by powder X-ray diffraction and cross-sectional high resolution-transmission electron microscopy. Upon the interstratification process, the original in-plane atomic arrangements and electronic structures of the component nanosheets remain intact. The obtained heterolayered nanohybrids show a strong absorption of visible light and a remarkably depressed photoluminescence signal, indicating an effective electronic coupling between the two component nanosheets. The self-assembly between 2D inorganic nanosheets leads to the formation of highly porous stacking structure, whose porosity is controllable by changing the ratio of layered titanate/Zn-Cr-LDH. The resultant heterolayered nanohybrids are fairly active for visible light-induced O(2) generation with a rate of ∼1.18 mmol h(-1) g(-1), which is higher than the O(2) production rate (∼0.67 mmol h(-1) g(-1)) by the pristine Zn-Cr-LDH material, that is, one of the most effective visible light photocatalysts for O(2) production, under the same experimental condition. This result highlights an excellent functionality of the Zn-Cr-LDH-layered titanate nanohybrids as efficient visible light active photocatalysts. Of prime interest is that the chemical stability of the Zn-Cr-LDH is significantly improved upon the hybridization, a result of the protection of the LDH lattice by highly stable titanate layer. The present findings clearly demonstrate that the layer-by-layer-ordered assembly between inorganic 2D nanosheets is quite effective not only in improving the photocatalytic activity of the component semiconductors but also in synthesizing novel porous LDH-based hybrid materials with improved chemical

  7. Protein Induces Layer-by-Layer Exfoliation of Transition Metal Dichalcogenides.

    PubMed

    Guan, Guijian; Zhang, Shuangyuan; Liu, Shuhua; Cai, Yongqing; Low, Michelle; Teng, Choon Peng; Phang, In Yee; Cheng, Yuan; Duei, Koh Leng; Srinivasan, Bharathi Madurai; Zheng, Yuangang; Zhang, Yong-Wei; Han, Ming-Yong

    2015-05-20

    Here, we report a general and facile method for effective layer-by-layer exfoliation of transition metal dichalcogenides (TMDs) and graphite in water by using protein, bovine serum albumin (BSA) to produce single-layer nanosheets, which cannot be achieved using other commonly used bio- and synthetic polymers. Besides serving as an effective exfoliating agent, BSA can also function as a strong stabilizing agent against reaggregation of single-layer nanosheets for greatly improving their biocompatibility in biomedical applications. With significantly increased surface area, single-layer MoS2 nanosheets also exhibit a much higher binding capacity to pesticides and a much larger specific capacitance. The protein exfoliation process is carefully investigated with various control experiments and density functional theory simulations. It is interesting to find that the nonpolar groups of protein can firmly bind to TMD layers or graphene to expose polar groups in water, facilitating the effective exfoliation of single-layer nanosheets in aqueous solution. The present work will enable to optimize the fabrication of various 2D materials at high yield and large scale, and bring more opportunities to investigate the unique properties of 2D materials and exploit their novel applications.

  8. Iridium Interfacial Stack (IRIS)

    NASA Technical Reports Server (NTRS)

    Spry, David James (Inventor)

    2015-01-01

    An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

  9. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.

    PubMed

    Schulte-Braucks, C; von den Driesch, N; Glass, S; Tiedemann, A T; Breuer, U; Besmehn, A; Hartmann, J-M; Ikonic, Z; Zhao, Q T; Mantl, S; Buca, D

    2016-05-25

    (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.

  10. Double dipole RET investigation for 32 nm metal layers

    NASA Astrophysics Data System (ADS)

    Babcock, Carl; Zou, Yi; Dunn, Derren; Baum, Zachary; Zhao, Zengqin; Matthew, Itty; LaCour, Pat

    2008-10-01

    For 32 nm test chips, aggressive resolution enhancement technology (RET) was required for 1x metal layers to enable printing minimum pitches before availability of the final 32 nm exposure tool. Using a currently installed immersion scanner with 1.2 numerical aperture (NA) for early 32 nm test chips, one of the RET strategies capable of resolving the minimum pitch with acceptable process latitude was dipole illumination. To avoid restricting the use of minimum pitch to a single orientation, we developed a double-expose/single-develop process using horizontal and vertical dipole illumination. To enable this RET, we developed algorithms to decompose general layouts, including random logic, interconnect test patterns, and SRAM designs, into two mask layers: a first exposure (E1) of predominantly vertical features, to be patterned with horizontal dipole illumination; and, a second exposure (E2) of predominantly horizontal features, to be patterned with vertical dipole illumination. We wrote this algorithm into our OPC program, which then applies sub-resolution assist features (SRAFs) separately to the E1 and E2 masks, coordinating the two to avoid problems with overlapping exposures. This was followed by two-mask OPC, using E1 and E2 as mask layers and the original layout (single layer) as the target layer. In this paper, we describe some of the issues with decomposing layout by orientation, issues that arise in SRAF application and OPC, and some approaches we examined to address these issues.

  11. Selective and low temperature transition metal intercalation in layered tellurides

    PubMed Central

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  12. Selective and low temperature transition metal intercalation in layered tellurides

    NASA Astrophysics Data System (ADS)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-12-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid.

  13. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

    SciTech Connect

    Burke, Micheal Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J.

    2015-01-01

    The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

  14. Van Der Waals heterogeneous layer-layer carbon nanostructures involving π···H-C-C-H···π···H-C-C-H stacking based on graphene and graphane sheets.

    PubMed

    Yuan, Kun; Zhao, Rui-Sheng; Zheng, Jia-Jia; Zheng, Hong; Nagase, Shigeru; Zhao, Sheng-Dun; Liu, Yan-Zhi; Zhao, Xiang

    2017-04-15

    Noncovalent interactions involving aromatic rings, such as π···π stacking, CH···π are very essential for supramolecular carbon nanostructures. Graphite is a typical homogenous carbon matter based on π···π stacking of graphene sheets. Even in systems not involving aromatic groups, the stability of diamondoid dimer and layer-layer graphane dimer originates from C - H···H - C noncovalent interaction. In this article, the structures and properties of novel heterogeneous layer-layer carbon-nanostructures involving π···H-C-C-H···π···H-C-C-H stacking based on [n]-graphane and [n]-graphene and their derivatives are theoretically investigated for n = 16-54 using dispersion corrected density functional theory B3LYP-D3 method. Energy decomposition analysis shows that dispersion interaction is the most important for the stabilization of both double- and multi-layer-layer [n]-graphane@graphene. Binding energy between graphane and graphene sheets shows that there is a distinct additive nature of CH···π interaction. For comparison and simplicity, the concept of H-H bond energy equivalent number of carbon atoms (noted as NHEQ), is used to describe the strength of these noncovalent interactions. The NHEQ of the graphene dimers, graphane dimers, and double-layered graphane@graphene are 103, 143, and 110, indicating that the strength of C-H···π interaction is close to that of π···π and much stronger than that of C-H···H-C in large size systems. Additionally, frontier molecular orbital, electron density difference and visualized noncovalent interaction regions are discussed for deeply understanding the nature of the C-H···π stacking interaction in construction of heterogeneous layer-layer graphane@graphene structures. We hope that the present study would be helpful for creations of new functional supramolecular materials based on graphane and graphene carbon nano-structures. © 2017 Wiley Periodicals, Inc.

  15. Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

    NASA Astrophysics Data System (ADS)

    Zamani, Davoud

    ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources

  16. Towards a global model of the meteoric metal layers

    NASA Astrophysics Data System (ADS)

    Plane, John; Feng, Wuhu; Marsh, Daniel; Janches, Diego; Chipperfield, Martyn; Burrows, John P.; Sinnhuber, Miriam

    This paper will describe a major new initiative to develop a global model of the Na, Fe, Ca and Mg layers which are produced in the upper mesosphere and lower thermosphere by mete-oric ablation. The 4M (Multi-scale Modelling of Mesospheric Metals) project brings together three components: the injection of meteoric constituents into the atmosphere; the neutral and ion-molecule chemistries of these four metals; and a general circulation model of the whole atmosphere. The injection rates are calculated by combining the meteoric input function (MIF), an astro-nomical model which determines the meteoric size distribution and infall velocity distribution as a function of location and time, and a chemical ablation model (CABMOD), which calcu-lates the ablation rates of the different meteoric elements for a meteoroid of specified mass and velocity. The atmospheric chemistries of Na, Fe, Ca and Mg are now quite well understood: the kinetics of most of their important atmospheric reactions have been studied in the laboratory under appropriate conditions. This has enabled 1-dimensional models of these metallic layers to be produced, which compare satisfactorily with observations by ground-based lidar and space-borne spectrometers. The global model which has been chosen for the 4M project is the Whole Atmosphere Chemistry Climate Model (WACCM), developed at NCAR (Boulder). The model extends from 0 -140 km and includes a full treatment of neutral chemistry and lower E region ion chemistry. We will present the initial results on modelling the global Na and Fe layers.

  17. The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack

    SciTech Connect

    Winter, R.; Krylov, I.; Eizenberg, M.; Ahn, J.; McIntyre, P. C.

    2014-05-19

    The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al{sub 2}O{sub 3}/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

  18. Tunable magnetic resonance in double layered metallic structures.

    PubMed

    Zhou, L; Zhu, Y Y

    2011-12-01

    Double layered metallic gratings have been investigated both theoretically and experimentally. The authors have reported that tunable magnetic resonance (MR) can be achieved by modulating the vertical chirped width dh which could be controlled conveniently in the common electron and/or ion beam microfabrications. The linear relationship between MR wavelength and dh has been reported. By introducing the difference of electric and magnetic penetration depth, an analytic formula deduced from a modified LC model has shown good agreement with the simulation results, and an effective width for trapezoidal sandwiched microstructures has been presented. Our results may provide an alternative choice for tunable MR and broad bandwidth of magnetic metamaterials.

  19. Different forms of antiparallel stacking of hydrogen-bonded antidromic rings in the solid state: polymorphism with virtually the same unit cell and two-dimensional isostructurality with alternating layers.

    PubMed

    Kálmán, Alajos; Fábián, László; Argay, Gyula; Bernáth, Gábor; Gyarmati, Zsuzsanna Cs

    2004-12-01

    As a continuation of a systematic structural analysis of 2-hydroxycycloalkanecarboxylic acids and their carboxamide analogs, the effects of antidromic rings [Jeffrey & Saenger (1991). Hydrogen Bonding in Biological Structures. Berlin, Heidelberg: Springer Verlag] upon the layer stacking of cyclopentane and cycloheptane derivatives are compared. Determination of the structure of trans-2-hydroxycycloheptanecarboxylic acid (2) led to the discovery of two polymorphs with virtually the same unit cell [Kalman et al. (2003). J. Am. Chem. Soc. 125, 34-35]. (i) The layer stacking of the antidromic rings for the whole single crystal is antiparallel (2b). (ii) The antidromic rings and the 21 axis are parallel (2a), consequently the domains of the single crystal must be antiparallel. While their polymorphism is solvent-controlled, they illustrate a novel form of two-dimensional isostructurality. Antiparallel layer stacking is again demonstrated by trans-2-hydroxycycloheptanecarboxamide (3) (space group Pbca). It is built up from layers isostructural with those in the homologous trans-2-hydroxycyclopentanecarboxamide (4) [Kalman et al. (2001). Acta Cryst. B57, 539-550], but in this structure (space group Pca21) the layers are stacked in parallel mode. Similar to (2a) and (2b), the antiparallel layer stacking in (3) versus their parallel array in (4) illustrates the two-dimensional isostructurality with alternating layer orientations. Although (3) and (4) display isostructurality, they are not isomorphous.

  20. Layered Metal Thiophosphite Materials: Magnetic, Electrochemical, and Electronic Properties.

    PubMed

    Mayorga-Martinez, Carmen C; Sofer, Zdeněk; Sedmidubský, David; Huber, Štěpán; Eng, Alex Yong Sheng; Pumera, Martin

    2017-03-29

    Beyond graphene, transitional metal dichalcogenides, and black phosphorus, there are other layered materials called metal thiophosphites (MPSx), which are recently attracting the attention of scientists. Here we present the synthesis, structural and morphological characterization, magnetic properties, electrochemical performance, and the calculated density of states of different layered metal thiophosphite materials with a general formula MPSx, and as a result of varying the metal component, we obtain CrPS4, MnPS3, FePS3, CoPS3, NiPS3, ZnPS3, CdPS3, GaPS4, SnPS3, and BiPS4. SnPS3, ZnPS3, CdPS3, GaPS4, and BiPS4 exhibit only diamagnetic behavior due to core electrons. By contrast, trisulfides with M = Mn, Fe, Co, and Ni, as well as CrPS4, are paramagnetic at high temperatures and undergo a transition to antiferromagnetic state on cooling. Within the trisulfides series the Néel temperature characterizing the transition from paramagnetic to antiferromagnetic phase increases with the increasing atomic number and the orbital component enhancing the total effective magnetic moment. Interestingly, in terms of catalysis NiPS3, CoPS3, and BiPS4 show the highest efficiency for hydrogen evolution reaction (HER), while for the oxygen evolution reaction (OER) the highest performance is observed for CoPS3. Finally, MnPS3 presents the highest oxygen reduction reaction (ORR) activity compared to the other MPSx studied here. This great catalytic performance reported for these MPSx demonstrates their promising capabilities in energy applications.

  1. Analysis of Si-SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory

    NASA Astrophysics Data System (ADS)

    Kim, Nam-Kyeong; Kim, Se-Jun; Park, Kyoung-Hwan; Choi, Eun-Seok; Lee, Min-Kyu; Kim, Hyeon-Soo; Noh, Keum-Hwan; Om, Jae-Chul; Lee, Hee-Kee; Bae, Gi-Hyun

    2006-09-01

    We report the dependence of Si-SiO2 interface trap density after Fowler-Nordheim (F/N) stress on various capping materials between gate stacks and an inter layer dielectric (ILD) in a NAND Flash memory cell. The interface trap density was characterized by charge pumping method (CPM). When the capping layer is an oxide, the Nit after F/N stress is approximately 2× 1011 cm-2, which is about 50% smaller than that with a nitride layer. We found that the oxide layer causes compressive stress whereas the nitride layer causes a relatively high tensile stress in the underlying substrate by measuring the warp change of the substrate. To correlate the interface state density and data retention characteristics, we measured Vt shift after high-temperature baking. When an oxide capping layer is used, the retention characteristics of memory devices are greatly improved compared to the nitride capping case. These results show a good correlation between the interface characteristics and mechanical stress behaviors.

  2. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides.

    PubMed

    Terrones, Humberto; López-Urías, Florentino; Terrones, Mauricio

    2013-01-01

    Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS2, WS2, WSe2 and MoSe2 exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts, sensors and valleytronic components. Unfortunately, the direct band gap only occurs for mono-layered STMD. We have found, using first principles calculations, that by alternating individual layers of different STMD (MoS2, WS2, WSe2 and MoSe2) with particular stackings, it is possible to generate direct band gap bi-layers ranging from 0.79 eV to 1.157 eV. Interestingly, in this direct band gap, electrons and holes are physically separated and localized in different layers. We foresee that the alternation of different STMD would result in the fabrication of materials with unprecedented optical and physico-chemical properties that would need further experimental and theoretical investigations.

  3. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

    PubMed Central

    Terrones, Humberto; López-Urías, Florentino; Terrones, Mauricio

    2013-01-01

    Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS2, WS2, WSe2 and MoSe2 exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts, sensors and valleytronic components. Unfortunately, the direct band gap only occurs for mono-layered STMD. We have found, using first principles calculations, that by alternating individual layers of different STMD (MoS2, WS2, WSe2 and MoSe2) with particular stackings, it is possible to generate direct band gap bi-layers ranging from 0.79 eV to 1.157 eV. Interestingly, in this direct band gap, electrons and holes are physically separated and localized in different layers. We foresee that the alternation of different STMD would result in the fabrication of materials with unprecedented optical and physico-chemical properties that would need further experimental and theoretical investigations. PMID:23528957

  4. Effect of the deformation temperature on the structural refinement of BCC metals with a high stacking fault energy during high pressure torsion

    NASA Astrophysics Data System (ADS)

    Voronova, L. M.; Chashchukhina, T. I.; Gapontseva, T. M.; Krasnoperova, Yu. G.; Degtyarev, M. V.; Pilyugin, V. P.

    2016-10-01

    The structural evolution in bcc metals (molybdenum, niobium) with a high stacking fault energy (300 and 200 mJ/m-2, respectively) is studied during high pressure torsion in Bridgman anvils at temperatures of 290 and 80 K. It is established that cryogenic deformation of these metals does not result in twinning; however, banded structures are formed at the initial stage of deformation. Misoriented kink bands, which inhibit the formation of a homogeneous submicrocrystalline structure similarly to twins, form in molybdenum. The banded structures in niobium are characterized by low-angle misorientations; they do not suppress the formation of a submicrocrystalline structure and the refinement of microcrystallites to nanosizes.

  5. Unidirectional transmission in non-symmetric gratings containing metallic layers.

    PubMed

    Serebryannikov, A E; Ozbay, Ekmel

    2009-08-03

    The mechanism of achieving unidirectional transmission in the gratings, which only contain isotropic dielectric and metallic layers, is suggested and numerically validated. It is shown that significant transmission in one direction and nearly zero transmission in the opposite direction can be obtained in the same intrinsically isotropic gratings as those studied recently in A. E. Serebryannikov and E. Ozbay, Opt. Express 17, 278 (2009), but at a non-zero angle of incidence. The tilting, non-symmetric features of the grating and the presence of a metallic layer with a small positive real part of the index of refraction are the conditions that are necessary for obtaining the unidirectionality. Single- and multibeam operational regimes are demonstrated. The frequency and angle ranges of the unidirectional transmission can be estimated by using the conventional framework based on isofrequency dispersion contours and construction lines that properly take into account the periodic features of the interfaces, but should then be corrected because of the tunneling arising within the adjacent ranges. After proper optimization, this mechanism is expected to become an alternative to that based on the use of anisotropic materials.

  6. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

    SciTech Connect

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.; Boley, Allison; Smith, David J.

    2015-10-26

    The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressive strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.

  7. Preparation and characterization of the heterojunction of CuInSe2/CdS thin films prepared by stacked elemental layer technique

    NASA Astrophysics Data System (ADS)

    Sharma, Mahesh C.; Vashistha, Indu B.; Vijay, Y. K.

    2013-06-01

    In the present paper, we reported heterojunction of CuInSe2/CdS thin films prepared by stacking elemental layers (SEL) technique in a vacuum 2×10-5 Torr. The as-grown CuInSe2/CdS thin films have been annealed at 300 °C in air for heating time 1h for improving the interface and crystallinity of the heterojunction. As-grown and annealed heterojunction of CuInSe2/CdS thin films have been characterized for compositional, morphological and electrical properties by energy dispersive X-ray (EDAX) analysis, scanning electron microscopy (SEM) and I-V response respectively. The presence of observed and expected elements in the EDAX spectra confirms the elemental compositions in CuInSe2/CdS thin films. Surface morphology of as-grown stacked layers and annealed thin films have been confirmed by SEM images. The dark I-V characteristics show that a recombination mechanism controls the transport of charge carriers across the junction. On illumination, appreciable changes in the I-V characteristics and photovoltaic effects have been observed. The enhancement in solar energy conversion efficiency has been observed a value of about 0.68% after annealing.

  8. Cross-stacked carbon nanotube film as an additional built-in current collector and adsorption layer for high-performance lithium sulfur batteries

    NASA Astrophysics Data System (ADS)

    Sun, Li; Kong, Weibang; Li, Mengya; Wu, Hengcai; Jiang, Kaili; Li, Qunqing; Zhang, Yihe; Wang, Jiaping; Fan, Shoushan

    2016-02-01

    Cross-stacked carbon nanotube (CNT) film is proposed as an additional built-in current collector and adsorption layer in sulfur cathodes for advanced lithium sulfur (Li-S) batteries. On one hand, the CNT film with high conductivity, microstructural rough surface, high flexibility and mechanical durability retains stable and direct electronic contact with the sulfur cathode materials, therefore decreasing internal resistivity and suppressing polarization of the cathode. On the other hand, the highly porous structure and the high surface area of the CNT film provide abundant adsorption points to support and confine sulfur cathode materials, alleviate their aggregation and promote high sulfur utilization. Moreover, the lightweight and compact structure of the CNT film adds no extra weight or volume to the sulfur cathode, benefitting the improvement of energy densities. Based on these characteristics, the sulfur cathode with a 100-layer cross-stacked CNT film presents excellent rate performances with capacities of 986, 922 and 874 mAh g-1 at cycling rates of 0.2C, 0.5C and 1C for sulfur loading of 60 wt%, corresponding to an improvement of 52%, 109% and 146% compared to that without a CNT film. Promising cycling performances are also demonstrated, offering great potential for scaled-up production of sulfur cathodes for Li-S batteries.

  9. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

    NASA Astrophysics Data System (ADS)

    Tao, Gao; Ruimin, Xu; Kai, Zhang; Yuechan, Kong; Jianjun, Zhou; Cen, Kong; Xinxin, Yu; Xun, Dong; Tangsheng, Chen

    2016-06-01

    We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2O3/La x Al1-x O 3/Al2O3 stack (x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications. Project supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516).

  10. Theoretical Analysis of the Dynamic Properties of a 2-2 Cement-Based Piezoelectric Dual-Layer Stacked Sensor under Impact Load.

    PubMed

    Zhang, Taotao; Liao, Yangchao; Zhang, Keping; Chen, Jun

    2017-05-04

    Cement-based piezoelectric materials are widely used due to the fact that compared with common smart materials, they overcome the defects of structure-incompatibility and frequency inconsistency with a concrete structure. However, the present understanding of the mechanical behavior of cement-based piezoelectric smart materials under impact load is still limited. The dynamic characteristics under impact load are of importance, for example, for studying the anti-collision properties of engineering structures and aircraft takeoff-landing safety. Therefore, in this paper, an analytical model was proposed to investigate the dynamic properties of a 2-2 cement-based piezoelectric dual-layer stacked sensor under impact load based on the piezoelectric effect. Theoretical solutions are obtained by utilizing the variable separation and Duhamel integral method. To simulate the impact load and verify the theory, three types of loads, including atransient step load, isosceles triangle load and haversine wave load, are considered and the comparisons between the theoretical results, Li's results and numerical results are presented by using the control variate method and good agreement is found. Furthermore, the influences of several parameters were discussed and other conclusions about this sensor are also given. This should prove very helpful for the design and optimization of the 2-2 cement-based piezoelectric dual-layer stacked sensor in engineering.

  11. Theoretical Analysis of the Dynamic Properties of a 2-2 Cement-Based Piezoelectric Dual-Layer Stacked Sensor under Impact Load

    PubMed Central

    Zhang, Taotao; Liao, Yangchao; Zhang, Keping; Chen, Jun

    2017-01-01

    Cement-based piezoelectric materials are widely used due to the fact that compared with common smart materials, they overcome the defects of structure-incompatibility and frequency inconsistency with a concrete structure. However, the present understanding of the mechanical behavior of cement-based piezoelectric smart materials under impact load is still limited. The dynamic characteristics under impact load are of importance, for example, for studying the anti-collision properties of engineering structures and aircraft takeoff-landing safety. Therefore, in this paper, an analytical model was proposed to investigate the dynamic properties of a 2-2 cement-based piezoelectric dual-layer stacked sensor under impact load based on the piezoelectric effect. Theoretical solutions are obtained by utilizing the variable separation and Duhamel integral method. To simulate the impact load and verify the theory, three types of loads, including atransient step load, isosceles triangle load and haversine wave load, are considered and the comparisons between the theoretical results, Li’s results and numerical results are presented by using the control variate method and good agreement is found. Furthermore, the influences of several parameters were discussed and other conclusions about this sensor are also given. This should prove very helpful for the design and optimization of the 2-2 cement-based piezoelectric dual-layer stacked sensor in engineering. PMID:28471408

  12. Wear mechanisms in metal-on-metal bearings: the importance of tribochemical reaction layers.

    PubMed

    Wimmer, Markus A; Fischer, Alfons; Büscher, Robin; Pourzal, Robin; Sprecher, Christoph; Hauert, Roland; Jacobs, Joshua J

    2010-04-01

    Metal-on-metal (MoM) bearings are at the forefront in hip resurfacing arthroplasty. Because of their good wear characteristics and design flexibility, MoM bearings are gaining wider acceptance with market share reaching nearly 10% worldwide. However, concerns remain regarding potential detrimental effects of metal particulates and ion release. Growing evidence is emerging that the local cell response is related to the amount of debris generated by these bearing couples. Thus, an urgent clinical need exists to delineate the mechanisms of debris generation to further reduce wear and its adverse effects. In this study, we investigated the microstructural and chemical composition of the tribochemical reaction layers forming at the contacting surfaces of metallic bearings during sliding motion. Using X-ray photoelectron spectroscopy and transmission electron microscopy with coupled energy dispersive X-ray and electron energy loss spectroscopy, we found that the tribolayers are nanocrystalline in structure, and that they incorporate organic material stemming from the synovial fluid. This process, which has been termed "mechanical mixing," changes the bearing surface of the uppermost 50 to 200 nm from pure metallic to an organic composite material. It hinders direct metal contact (thus preventing adhesion) and limits wear. This novel finding of a mechanically mixed zone of nanocrystalline metal and organic constituents provides the basis for understanding particle release and may help in identifying new strategies to reduce MoM wear.

  13. Microstructures of YBa2Cu3Oy Layers Deposited on Conductive Layer-Buffered Metal Tapes

    NASA Astrophysics Data System (ADS)

    Ichinose, Ataru; Hashimoto, Masayuki; Horii, Shigeru; Doi, Toshiya

    REBa2Cu3Oy (REBCO; RE: rare-earth elements)-coated conductors (CCs) have high potential for use in superconducting devices. In particular, REBCO CCs are useful for superconducting devices working at relatively high temperatures near 77 K. The important issues in their applications are high performance, reliability and low cost. To date, sufficient performance for some applications has almost been achieved by considerable efforts. The establishment of the reliability of superconducting devices is under way at present. The issue of low cost must be resolved to realize the application of superconducting devices in the near future. Therefore, we have attempted several ways to reduce the cost of REBCO CCs. The coated conductors using a Nb-doped SrTiO3 buffer layer and Ni-plated Cu and stainless steel laminate metal tapes have recently been developed to eliminate the use of electric stabilization layers of Cu and Ag, which are expected to reduce the material cost. Good superconducting properties are obtained at 77 K. The critical current density (JC) at 77 K under a magnetic self-field is determined to be more than 2x106 A/cm2. The microstructures of the CCs are analyzed by transmission electron microscopy to obtain a much higher quality. By microscopic structure analysis, an overgrowth of the buffer layer is observed at a grain boundary of the metal substrate, which is one of the reasons for the high JC.

  14. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.

    PubMed

    Lv, Ruitao; Robinson, Joshua A; Schaak, Raymond E; Sun, Du; Sun, Yifan; Mallouk, Thomas E; Terrones, Mauricio

    2015-01-20

    CONSPECTUS: In the wake of the discovery of the remarkable electronic and physical properties of graphene, a vibrant research area on two-dimensional (2D) layered materials has emerged during the past decade. Transition metal dichalcogenides (TMDs) represent an alternative group of 2D layered materials that differ from the semimetallic character of graphene. They exhibit diverse properties that depend on their composition and can be semiconductors (e.g., MoS2, WS2), semimetals (e.g., WTe2, TiSe2), true metals (e.g., NbS2, VSe2), and superconductors (e.g., NbSe2, TaS2). The properties of TMDs can also be tailored according to the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. For example, 2H-MoS2 is semiconducting, whereas 1T-MoS2 is metallic. Bulk 2H-MoS2 possesses an indirect band gap, but when 2H-MoS2 is exfoliated into monolayers, it exhibits direct electronic and optical band gaps, which leads to enhanced photoluminescence. Therefore, it is important to learn to control the growth of 2D TMD structures in order to exploit their properties in energy conversion and storage, catalysis, sensing, memory devices, and other applications. In this Account, we first introduce the history and structural basics of TMDs. We then briefly introduce the Raman fingerprints of TMDs of different layer numbers. Then, we summarize our progress on the controlled synthesis of 2D layered materials using wet chemical approaches, chemical exfoliation, and chemical vapor deposition (CVD). It is now possible to control the number of layers when synthesizing these materials, and novel van der Waals heterostructures (e.g., MoS2/graphene, WSe2/graphene, hBN/graphene) have recently been successfully assembled. Finally, the unique optical, electrical, photovoltaic, and catalytic properties of few-layered TMDs are summarized and discussed. In particular, their enhanced photoluminescence (PL), photosensing, photovoltaic conversion, and

  15. Issues involved in the atomic layer deposition of metals

    NASA Astrophysics Data System (ADS)

    Grubbs, Robert Kimes

    Auger Electron Spectroscopy (AES) was used to study the nucleation and growth of tungsten on aluminum oxide surfaces. Tungsten metal was deposited using Atomic Layer Deposition (ALD) techniques. ALD uses sequential surface reactions to deposit material with atomic layer control. W ALD is performed using sequential exposures of WF6 and Si2H6. The step-wise nature of W ALD allows nucleation studies to be performed by analyzing the W surface concentration after each ALD reaction. Nucleation and growth regions can be identified by quantifying the AES signal intensities from both the W surface and the Al2O3 substrate. W nucleation occurred in 3 ALD reaction cycles. The AES results yielded a nucleation rate of 1.0 A/ALD cycle and a growth rate of ≈3 A/ALD cycle. AES studies also explored the nucleation and growth of Al2O3 on W. Al2O3 nucleated in 1 ALD cycle giving a nucleation rate of 3.5 A/ALD cycle and a subsequent growth rate of 1.0 A/ALD cycle. Mass spectrometry was then used to study the ALD reaction chemistry of tungsten deposition. Because of the step-wise nature of the W ALD chemistry, each W ALD reaction could be studied independently. The gaseous mass products were identified from both the WF6 and Si2H6 reactions. H2, HF and SiF4 mass products were observed for the WF6 reaction. The Si2H6 reaction displayed a room temperature reaction and a 200°C reaction. Products from the room temperature Si2H6 reaction were H2 and SiF3H. The reaction at 200°C yielded only H2 as a reaction product. H2 desorption from the surface contributes to the 200°C Si2H6 reaction. AES was used to confirm that the gas phase reaction products are correlated with a change in the surface species. Atomic hydrogen reduction of metal halides and oganometallic compounds provides another method for depositing metals with atomic layer control. The quantity of atomic hydrogen necessary to perform this chemistry is critical to the metal ALD process. A thermocouple probe was constructed to

  16. Characteristic Improvements of ZnO-Based Metal-Semiconductor-Metal Photodetector on Flexible Substrate with ZnO Cap Layer

    NASA Astrophysics Data System (ADS)

    Ji, Liang-Wen; Wu, Cheng-Zhi; Lin, Chih-Ming; Meen, Teen-Hang; Lam, Kin-Tak; Peng, Shi-Ming; Young, Sheng-Joue; Liu, Chien-Hung

    2010-05-01

    In this work, ZnO-based metal-semiconductor-metal photodetectors with and without a ZnO cap layer were fabricated on flexible substrates of poly(ethylene terephthalate) (PET) for comparative analysis. The ZnO films were prepared by a low-temperature sputtering process. The photodetector with a ZnO cap layer (stack structure: ZnO/Ag/ZnO/PET) shows a much higher UV-to-visible rejection ratio of 1.56 ×103 than that without. This can be attributed to the photocurrents that are not only significantly increased in the UV region but also slightly suppressed in the visible region for such a novel structure. With an incident wavelength of 370 nm and an applied bias of 3 V, the responsivities of both photodetectors with and without a ZnO cap layer are 3.80 ×10-2 and 2.36 ×10-3 A/W, which correspond to quantum efficiencies of 1.13 and 0.07%, respectively. The Schottky barrier height at the Ag/ZnO interface is also determined to be 0.782 eV.

  17. Characteristic Improvements of ZnO-Based Metal-Semiconductor-Metal Photodetector on Flexible Substrate with ZnO Cap Layer

    NASA Astrophysics Data System (ADS)

    Liang-Wen Ji,; Cheng-Zhi Wu,; Chih-Ming Lin,; Teen-Hang Meen,; Kin-Tak Lam,; Shi-Ming Peng,; Sheng-Joue Young,; Chien-Hung Liu,

    2010-05-01

    In this work, ZnO-based metal-semiconductor-metal photodetectors with and without a ZnO cap layer were fabricated on flexible substrates of poly(ethylene terephthalate) (PET) for comparative analysis. The ZnO films were prepared by a low-temperature sputtering process. The photodetector with a ZnO cap layer (stack structure: ZnO/Ag/ZnO/PET) shows a much higher UV-to-visible rejection ratio of 1.56 × 103 than that without. This can be attributed to the photocurrents that are not only significantly increased in the UV region but also slightly suppressed in the visible region for such a novel structure. With an incident wavelength of 370 nm and an applied bias of 3 V, the responsivities of both photodetectors with and without a ZnO cap layer are 3.80 × 10-2 and 2.36 × 10-3 A/W, which correspond to quantum efficiencies of 1.13 and 0.07%, respectively. The Schottky barrier height at the Ag/ZnO interface is also determined to be 0.782 eV.

  18. Ultraviolet photodetectors based on ZnO nanorods-seed layer effect and metal oxide modifying layer effect.

    PubMed

    Zhou, Hai; Fang, Guojia; Liu, Nishuang; Zhao, Xingzhong

    2011-02-15

    Pt/ZnO nanorod (NR) and Pt/modified ZnO NR Schottky barrier ultraviolet (UV) photodetectors (PDs) were prepared with different seed layers and metal oxide modifying layer materials. In this paper, we discussed the effect of metal oxide modifying layer on the performance of UV PDs pre- and post-deposition annealing at 300°C, respectively. For Schottky barrier UV PDs with different seed layers, the MgZnO seed layer-PDs without metal oxide coating showed bigger responsivity and larger detectivity (Dλ*) than those of PDs with ZnO seed layer, and the reason was illustrated through energy band theory and the electron transport mechanism. Also the ratio of D254* to D546* was calculated above 8 × 102 for all PDs, which demonstrated that our PDs showed high selectivity for detecting UV light with less influence of light with long wavelength.

  19. Electronic, Mechanical, and Dielectric Properties of Two-Dimensional Atomic Layers of Noble Metals

    NASA Astrophysics Data System (ADS)

    Kapoor, Pooja; Kumar, Jagdish; Kumar, Arun; Kumar, Ashok; Ahluwalia, P. K.

    2017-01-01

    We present density functional theory-based electronic, mechanical, and dielectric properties of monolayers and bilayers of noble metals (Au, Ag, Cu, and Pt) taken with graphene-like hexagonal structure. The Au, Ag, and Pt bilayers stabilize in AA-stacked configuration, while the Cu bilayer favors the AB stacking pattern. The quantum ballistic conductance of the noble-metal mono- and bilayers is remarkably increased compared with their bulk counterparts. Among the studied systems, the tensile strength is found to be highest for the Pt monolayer and bilayer. The noble metals in mono- and bilayer form show distinctly different electron energy loss spectra and reflectance spectra due to the quantum confinement effect on going from bulk to the monolayer limit. Such tunability of the electronic and dielectric properties of noble metals by reducing the degrees of freedom of electrons offers promise for their use in nanoelectronics and optoelectronics applications.

  20. Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Majety, S.; Li, J.; Cao, X. K.; Dahal, R.; Lin, J. Y.; Jiang, H. X.

    2012-10-01

    Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (10B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical vapor deposition (MOCVD). Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.0036 μm-1 and 277 μm, respectively. To partially address the key requirement of long carrier lifetime and diffusion length for a solid-state neutron detector, micro-strip metal-semiconductor-metal detectors were fabricated and tested. A good current response was generated in these detectors using continuous irradiation with a thermal neutron beam, corresponding to an effective conversion efficiency approaching ~80% for absorbed neutrons.

  1. Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

    NASA Astrophysics Data System (ADS)

    Xu, Miao; Zhu, Huilong; Zhang, Yanbo; Xu, Qiuxia; Zhang, Yongkui; Qin, Changliang; Zhang, Qingzhu; Yin, Huaxiang; Xu, Hao; Chen, Shuai; Luo, Jun; Li, Chunlong; Zhao, Chao; Ye, Tianchun

    2017-03-01

    In this work, we propose two threshold voltage (VTH) tuning methods for bulk FinFETs with replacement high-k metal gate. The first method is to perform a vertical implantation into fin structure after dummy gate removal, self-aligned forming halo & punch through stop pocket (halo & PTSP) doping profile. The second method is to execute P+/BF2+ ion implantations into the single common work function (WF) layer in N-/P-FinFETs, respectively. These two methods have been investigated by TCAD simulations and MOS-capacitor experiments respectively, and then integrated into FinFET fabrication successfully. Experimental results show that the halo & PTSP doping profile can reduce VTH roll off and total variation. With P+/BF2+ doped WF layer, the VTH-sat shift -0.43 V/+1.26 V for N-FinFETs and -0.75 V/+0.11 V for P-FinFETs, respectively, with gate length of 500 nm. The proposed two methods are simple and effective for FinFET VTH tuning, and have potential for future application of massive production.

  2. Crystal growth of Cu(In,Ga)Se2 film by RTP annealing of the stacked elemental layers formed by E-beam evaporation

    NASA Astrophysics Data System (ADS)

    Li, Zhao-Hui; Cho, Eou-Sik; Kwon, Sang Jik

    2014-02-01

    Cu(In,Ga)Se2 (CIGS) thin films were successfully prepared by the application of a rapid thermal process to the stacked elemental layers (SEL), which were deposited by electron-beam (E-beam) evaporation method in the sequence of Cu/In/Ga/…/Cu/In/Ga. For the crystal growth of the CIGS absorber layer, an Se layer was deposited on top of the SEL precursors, and RTP annealing was carried out by a 2-step process at 200 °C for 5 min and at 550 °C for 3 min. The stoichiometry of the CIGS film with Cu/(In+Ga) and Ga/(In+Ga) atomic ratios of 0.90 and 0.26, respectively, was obtained with the optimum thickness ratio of the Cu/In and Ga precursor layers. In grown CIGS film, the suppression of Se loss during the annealing is very important. A subsidiary quartz box was used for sustaining maintaining the Se vapors during the selenization process in order to prevent Se loss. The experimental results show that the method is effective for preventing Se loss without the use of toxic H2Se gas or any other Se sources. The obtained CIGS film was homogeneous, and the surface morphology was dense with quite a large grain size of about 2 μm.

  3. Method for producing functionally graded nanocrystalline layer on metal surface

    DOEpatents

    Ajayi, Oyelayo O.; Hershberger, Jeffrey G.

    2010-03-23

    An improved process for the creation or formation of nanocrystalline layers on substrates' surfaces is provided. The process involves "prescuffing" the surface of a substrate such as a metal by allowing friction to occur on the surface by a load-bearing entity making rubbing contact and moving along and on the substrate's surface. The "prescuffing" action is terminated when the coefficient of friction between the surface and the noise is rising significantly. Often, the significant rise in the coefficient of friction is signaled by a change in pitch of the scuffing action sound emanating from the buffeted surface. The "prescuffing" gives rise to a harder and smoother surface which withstands better any inadequate lubrication that may take place when the "prescuffed" surface is contacted by other surfaces.

  4. Vertical bipolar charge plasma transistor with buried metal layer.

    PubMed

    Nadda, Kanika; Kumar, M Jagadesh

    2015-01-19

    A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current gain but also exhibits high BVCEO · f(T) product making it highly suitable for mixed signal high speed circuits. The proposed device structure is also suitable for realizing doping-less bipolar charge plasma transistor using compound semiconductors such as GaAs, SiC with low thermal budgets. The device is also immune to non-ideal current crowding effects cropping up at high current densities.

  5. Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

    PubMed Central

    Nadda, Kanika; Kumar, M. Jagadesh

    2015-01-01

    A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current gain but also exhibits high BVCEO · fT product making it highly suitable for mixed signal high speed circuits. The proposed device structure is also suitable for realizing doping-less bipolar charge plasma transistor using compound semiconductors such as GaAs, SiC with low thermal budgets. The device is also immune to non-ideal current crowding effects cropping up at high current densities. PMID:25597295

  6. π(+)-π(+) stacking of imidazolium cations enhances molecular layering of room temperature ionic liquids at their interfaces.

    PubMed

    Tang, Fujie; Ohto, Tatsuhiko; Hasegawa, Taisuke; Bonn, Mischa; Nagata, Yuki

    2017-01-25

    The interfacial structure of room temperature ionic liquids (RTILs) controls many of the unique properties of RTILs, such as the high capacitance of RTILs and the efficiency of charge transport between RTILs and electrodes. RTILs have been experimentally shown to exhibit interfacial molecular layering structures over a 10 Å length scale. However, the driving force behind the formation of these layered structures has not been resolved. Here, we report ab initio molecular dynamics simulations of imidazolium RTIL/air and RTIL/graphene interfaces along with force field molecular dynamics simulations. We find that the π(+)-π(+) interaction of imidazolium cations enhances the layering structure of RTILs, despite the electrostatic repulsion. The length scales of the molecular layering at the RTIL/air and RTIL/graphene interfaces are very similar, manifesting the limited effect of the substrate on the interfacial organization of RTILs.

  7. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide.

    PubMed

    Sampson, Matthew D; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-04-05

    Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazing-incidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

  8. Silver-doped metal layers for medical applications

    NASA Astrophysics Data System (ADS)

    Kocourek, T.; Jelínek, M.; Mikšovský, J.; Jurek, K.; Weiserová, M.

    2014-08-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316 L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 to 4.32 at% for steel and from 3.04 to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficiency (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using a scratch test. The antibacterial efficiency changed with silver doping up to 99.9 %. Our investigation was focused on the minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  9. Low Threshold Voltage and High Mobility N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Using Hf-Si/HfO2 Gate Stack Fabricated by Gate-Last Process

    NASA Astrophysics Data System (ADS)

    Ando, Takashi; Hirano, Tomoyuki; Tai, Kaori; Yamaguchi, Shinpei; Yoshida, Shinichi; Iwamoto, Hayato; Kadomura, Shingo; Watanabe, Heiji

    2010-01-01

    Systematic characterization of Hf-Si/HfO2 gate stacks revealed two mobility degradation modes. One is carrier scattering by fixed charges and/or trapped charges induced by the crystallization in the thick HfO2 case (inversion oxide thickness, Tinv> 1.6 nm). The other is the Hf penetration into the interfacial layer with the Si substrate in the thin HfO2 case (Tinv< 1.6 nm) for the Hf-rich electrode. It was demonstrated that careful optimization of the HfO2 thickness and the Hf-Si composition can suppress both modes. As a result, a high electron mobility equivalent to that of n+polycrystalline silicon (poly-Si)/SiO2 (248 cm2 V-1 s-1 at Eeff=1 MV/cm) was obtained at Tinv of 1.47 nm. Moreover, the effective work function of the optimized Hf-Si/HfO2 gate stack is located within 50 mV from the Si band edge (Ec). An extremely high Ion of 1165 µA/µm (at Ioff = 81 nA/µm) at Vdd=1.0 V was demonstrated for a 45 nm gate n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) without strain enhanced technology.

  10. Electroabsorption modulators integrated with DFB lasers based on identical active double-stack MQW-layer structure with high-frequency performance

    NASA Astrophysics Data System (ADS)

    Stegmueller, Bernhard; Hanke, Christian

    2003-12-01

    Electro optic modulators are key components for fiber optic transmission at data rates exceeding 10Gbit/s. The monolithic integration of an electroabsorption (EA) modulator applying the quantum confined stark effect with a distributed feedback (DFB) laser diode was demonstrated using a novel approach based on a double-stack multiple quantum well (MQW) structure. This novel approach using an identical MQW layer structure for both devices, the DFB laser diode and the EA modulator, will be described and discussed. Recently, a maximum 3dB-cutoff frequency of 25 GHz was measured. Further experimental results obtained from devices operating at 1.3 μm and 1.55 μm, respectively, exhibit the potential of these devices for high-speed data rate transmission.

  11. Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

    PubMed Central

    2011-01-01

    Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers. PMID:21711697

  12. Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers.

    PubMed

    Frigeri, Cesare; Serényi, Miklós; Khánh, Nguyen Quoc; Csik, Attila; Riesz, Ferenc; Erdélyi, Zoltán; Nasi, Lucia; Beke, Dezső László; Boyen, Hans-Gerd

    2011-03-01

    Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.

  13. The stratum corneum comprises three layers with distinct metal-ion barrier properties

    PubMed Central

    Kubo, Akiharu; Ishizaki, Itsuko; Kubo, Akiko; Kawasaki, Hiroshi; Nagao, Keisuke; Ohashi, Yoshiharu; Amagai, Masayuki

    2013-01-01

    The stratum corneum (SC), the outermost barrier of mammalian bodies, consists of layers of cornified keratinocytes with intercellular spaces sealed with lipids. The insolubility of the SC has hampered in-depth analysis, and the SC has been considered a homogeneous barrier. Here, we applied time-of-flight secondary ion mass spectrometry to demonstrate that the SC consists of three layers with distinct properties. Arginine, a major component of filaggrin-derived natural moisturizing factors, was concentrated in the middle layer, suggesting that this layer functions in skin hydration. Topical application of metal ions revealed that the outer layer allowed their passive influx and efflux, while the middle and lower layers exhibited distinct barrier properties, depending on the metal tested. Notably, filaggrin deficiency abrogated the lower layer barrier, allowing specific metal ions to permeate viable layers. These findings elucidate the multi-layered barrier function of the SC and its defects in filaggrin-deficient atopic disease patients. PMID:23615774

  14. Avoiding chromium transport from stainless steel interconnects into contact layers and oxygen electrodes in intermediate temperature solid oxide electrolysis stacks

    NASA Astrophysics Data System (ADS)

    Schlupp, Meike V. F.; Kim, Ji Woo; Brevet, Aude; Rado, Cyril; Couturier, Karine; Vogt, Ulrich F.; Lefebvre-Joud, Florence; Züttel, Andreas

    2014-12-01

    We investigated the ability of (La0.8Sr0.2)(Mn0.5Co0.5)O3-δ (LSMC) and La(Ni0.6Fe0.4)O3-δ (LNF) contact coatings to avoid the transport of Cr from steel interconnects to solid oxide electrolysis electrodes, especially to the anode. The transport of chromium from commercial Crofer 22 APU (ThyssenKrupp) and K41X (AISI441, Aperam Isbergues) steels through LSMC and LNF contact coatings into adjacent (La0.8Sr0.2)MnO3-δ (LSM) oxygen electrodes was investigated in an oxygen atmosphere at 700 °C. Chromium concentrations of up to 4 atom% were detected in the contact coatings after thermal treatments for 3000 h, which also lead to the presence of chromium in adjacent LSM electrodes. Introduction of a dense (Co,Mn)3O4 coating between steel and contact coating was necessary to prevent the diffusion of chromium into contact coatings and electrodes and should lead to extended stack performance and lifetime.

  15. Annealing induced interfacial layers in niobium-clad stainless steel developed as a bipolar plate material for polymer electrolyte membrane fuel cell stacks

    SciTech Connect

    Hong, Sung Tae; Weil, K. Scott; Choi, Jung-Pyung; Bae, In-Tae; Pan, Jwo

    2010-05-01

    Niobium (Nb)-clad 304L stainless steel (SS) manufactured by cold rolling is currently under consideration for use as a bipolar plate material in polymer electrolyte membrane fuel cell (PEMFC) stacks. To make the fabrication of bipolar plates using the Nb-clad SS feasible, annealing may be necessary for the Nb-clad SS to reduce the springback induced by cold rolling. However, the annealing can develop an interfacial layer between the Nb cladding and the SS core and the interfacial layer plays a key role in the failure of the Nb-clad SS as reported earlier [JPS our work]. In this investigation, the Nb-clad SS specimens in as-rolled condition were annealed at different combinations of temperature and time. Based on the results of scanning electron microscope (SEM) analysis, an annealing process map for the Nb-clad SS was obtained. The results of SEM analysis and Transmission Electron Microscope (TEM) analysis also suggest that different interfacial layers occurred based on the given annealing conditions.

  16. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    NASA Astrophysics Data System (ADS)

    Herz, A.; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D.; Schaaf, P.

    2016-03-01

    Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO3) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  17. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    SciTech Connect

    Herz, A. E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D. E-mail: dong.wang@tu-ilmenau.de; Schaaf, P.

    2016-03-15

    Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  18. Control of the optical and crystalline properties of TiO{sub 2} in visible-light active TiO{sub 2}/TiN bi-layer thin-film stacks

    SciTech Connect

    Smith, Wilson; Fakhouri, Houssam; Pulpytel, Jerome; Arefi-Khonsari, Farzaneh

    2012-01-15

    Multi-layered thin films of TiO{sub 2} and TiN were created by rf reactive magnetron sputtering, and their crystalline, optical, and photoelectrochemical properties were measured. The overall composition of the films (TiO{sub 2}-to-TiN ratio) was kept constant with the height of each film. The number of layers and thickness of each layer was controlled to create bi-layer thin films that were composed of: 9 bi-layers, 18 bi-layers, 27 bi-layers, 36 bi-layers, and 45 bi-layers. XRD patterns were observed for each film after annealing to measure the grain size and composition of anatase and rutile as a function of temperature. It was found that the phase-transition temperature is able to be substantially controlled (between 550 deg. C and 850 deg. C) for the anatase to rutile transition by varying the number of layers/thickness of each layer. In addition, bi-layer stacking significantly affected the film's optical properties by lowering the bandgap into the visible-light region, and also showed up to three times the improvement in photoelectrochemical performance under uv and visible irradiation. Overall, bi-layer stacking of TiO{sub 2}/TiN films has shown a unique and highly desirable control over several important physical characteristics that can be beneficial for many applications, such as high-temperature sensors and optoelectronic devices.

  19. Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

    PubMed

    Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

    2017-09-13

    Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al2O3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.

  20. A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Na, Hyoungjun; Endoh, Tetsuo

    2012-02-01

    In this paper, a half select disturb free compact static random access memory (SRAM) cell with the stacked vertical metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed, and the impacts on its cell size, stability and speed performance are evaluated. The proposed SRAM cell has a small cell size, which is 67% of the conventional eight-transistor (8T) SRAM cell, because of its stacked vertical MOSFET structure. It realizes a half select disturb free SRAM operation; therefore, a larger static noise margin of 5.9 times is achieved in comparison with the conventional 8T SRAM cell. It suppresses the degradation of the write margin, thus its write margin is 84.2% of the conventional 8T SRAM cell. Furthermore, it suppresses the degradation of the write time by 39% (0.249 ns). The proposed compact SRAM cell with the stacked vertical MOSFET is a suitable SRAM cell with a small cell size, immunity to the half select disturb, wide write margin and fast write time.

  1. Imaging the Structure of Grains, Grain Boundaries, and Stacking Sequences in Single and Multi-Layer Graphene

    NASA Astrophysics Data System (ADS)

    Muller, David

    2012-02-01

    Graphene can be produced by chemical vapor deposition (CVD) on copper substrates on up to meter scales [1, 2], making their polycrystallinity [3,4] almost unavoidable. By combining aberration-corrected scanning transmission electron microscopy and dark-field transmission electron microscopy, we image graphene grains and grain boundaries across six orders of magnitude. Atomic-resolution images of graphene grain boundaries reveal that different grains can stitch together via pentagon-heptagon pairs. We use diffraction-filtered electron imaging to map the shape and orientation of several hundred grains and boundaries over fields of view of a hundred microns. Single, double and multilayer graphene can be differentiated, and the stacking sequence and relative abundance of sequences can be directly imaged. These images reveal an intricate patchwork of grains with structural details depending strongly on growth conditions. The imaging techniques enabled studies of the structure, properties, and control of graphene grains and grain boundaries [5]. [4pt] [1] X. Li et al., Science 324, 1312 (2009).[0pt] [2] S. Bae et al., Nature Nanotechnol. 5, 574 (2010).[0pt] [3] J. M. Wofford, et al., Nano Lett., (2010).[0pt] [4] P. Y. Huang, et al., Nature 469, 389--392 (2011); arXiv:1009.4714, (2010)[0pt] [5] In collaboration with Pinshane Y. Huang, C. S. Ruiz-Vargas, A. M. van der Zande, A. W. Tsen, L. Brown, R. Hovden, F. Ghahari, W. S. Whitney, M.P. Levendorf, J. W. Kevek, S. Garg, J. S. Alden, C. J. Hustedt, Y. Zhu, N. Petrone, J. Hone, J. Park, P. L. McEuen

  2. Stacked uppermost mantle layers within the Slave craton of NW Canada as defined by anisotropic seismic discontinuities

    NASA Astrophysics Data System (ADS)

    Snyder, D. B.

    2007-12-01

    A 20-station seismic array in NW Canada recorded 336 teleseismic events with distribution in back azimuth and epicentral distance sufficient to characterize uppermost mantle discontinuities between depths typical of the Mohorovicic and Lehman discontinuities. Following wave field decomposition, groups of seismograms were source-normalized through simultaneous deconvolution to estimate the near-receiver impulse response and thus detect major discontinuities beneath each seismic station. Stations within the Lac de Gras kimberlite field display an unusually strong negative impulse on the radial component within the NW quadrant and two moderate impulses on the transverse component. Forward modeling of these impulses suggests a mantle layer dipping at 22° to the southeast with a mildly anisotropic upper discontinuity at 120 to 135 km depth and another mildly anisotropic discontinuity at about 170 km depth. Superimposed on these layers is another, stronger anisotropic layer between 110 and 180 km depths that dips to the west. Stations outside of the Lac de Gras field, but within the southeastern Slave craton, display more numerous, but weaker impulses. The most prominent of these occurs at about 150 km depth on the transverse component and has opposite polarity to that observed further north. The prominent negative impulse on the radial component is interpreted to arise from structural- preferred orientation in the form of a stockwork of wehrlite dykes beneath the Lac de Gras field. Interpretation of the other layers in the context of known surface geology as well as xenolith petrology and garnet geochemistry of diamondiferous kimberlites favors previous suggestions that they represent 4000-2900 Ma depleted harzburgite and eclogite layers underthrust from the northwest at 2600 or 1880 Ma. The layer beneath the SE Slave has a similar, but distinct tectonic history of underthrusting associated with the 2635 to 2615 Ma Defeat Suite of plutonism. Taken together, these

  3. Stacked uppermost mantle layers within the Slave craton of NW Canada as defined by anisotropic seismic discontinuities

    NASA Astrophysics Data System (ADS)

    Snyder, David B.

    2008-08-01

    A 20-station seismic array in NW Canada recorded 336 teleseismic events with distribution in back azimuth and epicentral distance sufficient to characterize uppermost mantle discontinuities between depths typical of the Mohorovicic and Lehman discontinuities. Following wavefield decomposition, groups of seismograms were source-normalized through simultaneous deconvolution to estimate the near-receiver impulse response and thus detect major discontinuities beneath each seismic station. Stations within the Lac de Gras kimberlite field display an unusually strong negative impulse on the radial component within the NW quadrant and two moderate impulses on the transverse component. Forward modeling of these impulses suggests a mantle layer dipping at 22° to the southeast with a mildly anisotropic (2%) upper discontinuity at 120-135 km depth and another mildly anisotropic (2%) discontinuity at about 170 km depth. Superimposed on these layers is another, stronger anisotropic (4%) layer between 110 and 180 km depths that dips to the west. Stations outside of the Lac de Gras field, but within the southeastern Slave craton, display more numerous, but weaker, impulses. The most prominent of these occurs at about 150 km depth on the transverse component and has opposite polarity to that observed farther north. The prominent negative impulse observed on the radial component is interpreted to arise from structural-preferred orientation in the form of a stockwork of wehrlite dykes beneath the Lac de Gras field. Interpretation of the other layers in the context of known surface geology as well as xenolith petrology and garnet geochemistry of diamondiferous kimberlites favors previous suggestions that they represent 4000-2900 Ma depleted harzburgite and eclogite layers underthrust from the northwest at 2600 or 1880 Ma. The layer beneath the SE Slave craton has a similar, but distinct, tectonic history of NW-verging underthrusting associated with the 2635-2615 Ma Defeat Suite of

  4. Stacked insulator induction accelerator gaps

    SciTech Connect

    Houck, T.I.; Westenskow, G.A.; Kim, J.S.; Eylon, S.; Henestroza, E.; Yu, S.S.; Vanecek, D.

    1997-05-01

    Stacked insulators, with alternating layers of insulating material and conducting film, have been shown to support high surface electrical field stresses. We have investigated the application of the stacked insulator technology to the design of induction accelerator modules for the Relativistic-Klystron Two-Beam Accelerator program. The rf properties of the accelerating gaps using stacked insulators, particularly the impedance at frequencies above the beam pipe cutoff frequency, are investigated. Low impedance is critical for Relativistic-Klystron Two-Beam Accelerator applications where a high current, bunched beam is trsnsported through many accelerating gaps. An induction accelerator module designs using a stacked insulator is presented.

  5. Ordering and spin waves in NaNi O2 : A stacked quantum ferromagnet

    NASA Astrophysics Data System (ADS)

    Lewis, M. J.; Gaulin, B. D.; Filion, L.; Kallin, C.; Berlinsky, A. J.; Dabkowska, H. A.; Qiu, Y.; Copley, J. R. D.

    2005-07-01

    Neutron scattering measurements on powder NaNiO2 reveal magnetic Bragg peaks and spin waves characteristic of strongly correlated s=1/2 magnetic moments arranged in ferromagnetic layers which are stacked antiferromagnetically. This structure lends itself to stacking sequence frustration in the presence of mixing between nickel and alkali metal sites, possibly providing a natural explanation for the enigmatic spin glass state of the isostructural compound, LiNiO2 .

  6. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  7. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOEpatents

    Weihs, Timothy P.; Barbee, Jr., Troy W.

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  8. Hybrid functional studies of defects in layered transition metal oxides

    NASA Astrophysics Data System (ADS)

    Hoang, Khang; Johannes, Michelle

    2014-03-01

    Layered oxides LiMO2 (M is a transition metal) have been studied extensively for Li-ion battery cathodes. It is known that defects have strong impact on the electrochemical performance. A detailed understanding of native point defects in LiMO2 is however still lacking, thus hindering rational design of more complex materials for battery applications. In fact, first-principles defect calculations in LiMO2 are quite challenging because standard density functional theory (DFT) calculations using the generalized gradient approximation (GGA) of the exchange-correlation functional fail to reproduce the correct physics. The GGA+U extension can produce reasonable results, but the transferability of U across the compounds is limited. In this talk, we present our DFT studies of defects in LiMO2 (M=Co, Ni) using the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional. The dominant point defects will be identified and compared with experiment; and their impact on the structural stability and the charge (electronic and ionic) and mass transport will be addressed. We will also discuss possible shortcomings of the HSE functional in the study of these electron-correlated materials.

  9. Dislocated double-layer metal gratings: an efficient unidirectional coupler.

    PubMed

    Liu, Tianran; Shen, Yang; Shin, Wonseok; Zhu, Qiangzhong; Fan, Shanhui; Jin, Chongjun

    2014-07-09

    We propose theoretically and demonstrate experimentally a dislocated double-layer metal grating structure, which operates as a unidirectional coupler capable of launching surface plasmon polaritons in a desired direction under normal illumination. The structure consists of a slanted dielectric grating sandwiched between two gold gratings. The upper gold grating has a nonzero lateral relative displacement with respect to the lower one. Numerical simulations show that a grating structure with 7 periods can convert 49% of normally incident light into surface plasmons with a contrast ratio of 78 between the powers of the surface plasmons launched in two opposite directions. We explain the unidirectional coupling phenomenon by the dislocation-induced interference of the diffracted waves from the upper and lower gold gratings. Furthermore, we developed a simple and cost-effective technique to fabricate the structure via tilted two-beam interference lithography and subsequent shadow deposition of gold. The experimental results demonstrate a coupling efficiency of 36% and a contrast ratio of 43. The relatively simple periodic nature of our structure lends itself to large-scale low-cost fabrication and simple theoretical analysis. Also, unlike the previous unidirectional couplers based on aperiodic structures, the design parameters of our unidirectional coupler can be determined analytically. Therefore, this structure can be an important component for surface-plasmon-based nanophotonic circuits by providing an efficient interface between free-space and surface plasmon waves.

  10. Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

    NASA Astrophysics Data System (ADS)

    Lin, Chang-Yu; Ulaganathan, Rajesh Kumar; Sankar, Raman; Chou, Fang-Cheng

    2017-07-01

    Group IIIA-VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te) have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA-VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.

  11. Multi-scale analysis of the diffusion barrier layer of gadolinia-doped ceria in a solid oxide fuel cell operated in a stack for 3000 h

    NASA Astrophysics Data System (ADS)

    Morales, M.; Miguel-Pérez, V.; Tarancón, A.; Slodczyk, A.; Torrell, M.; Ballesteros, B.; Ouweltjes, J. P.; Bassat, J. M.; Montinaro, D.; Morata, A.

    2017-03-01

    The state-of-the-art materials for SOFCs are yttria-stabilized zirconia as electrolyte and lanthanum strontium cobalt ferrite as cathode. However, the formation of insulating phases between them requires the use of diffusion barriers, typically made of gadolinia doped ceria. The study of the stability of this layer during the fabrication and in operando is currently one of the major goals of the SOFC industry. In this work, the cation inter-diffusion at the cathode/barrier layer/electrolyte region is analysed for an anode-supported cell industrially fabricated by conventional techniques, assembled in a short-stack and tested under real operation conditions for 3000 h. A comprehensive study of this cell, and an equivalent non-operated one, is performed in order to understand the inter-diffusion mechanisms with possible effects on the final performance. The analyses evidence that the cation diffusion is occurring during the fabrication process. Despite the significant diffusion of Ce,Gd, Zr, Y and Sr cations, the formation of typically reported CGO-YSZ solid solution is not observed while the presence of isolated grains of SrZrO3 is proved. All in all, this study presents new insights into the stability of the typically employed diffusion barriers for solid oxide cells that will guide future strategies to improve their performance and durability.

  12. Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer

    NASA Astrophysics Data System (ADS)

    Dodd, Linzi E.; Shenton, Samantha A.; Gallant, Andrew J.; Wood, David

    2015-05-01

    Small area metal-oxide-metal (MOM) diodes are being investigated in many research groups for the detection of THz frequency radiation. In order to create a high-speed rectifying device, the central oxide layer of the MOM structure must be thin and have known physical characteristics. The thickness, structure and uniformity of the oxide can be controlled during the fabrication process. In the work presented here, the effects of both oxygen plasma concentration and annealing temperature during fabrication of MOM diodes have been explored. It has been found that, by reducing the oxygen gas concentration from previous work, the layer can be more repeatable and uniform. Furthermore, for an anneal temperature up to a threshold temperature in the to range, the performance of the diodes is excellent, with a value of zero-bias curvature coefficient (CCZB) that can be up to . For higher temperature treatments, the value of CCZB decreases to a maximum of . Similar trends in AC tests can be seen for voltage and current responsivity values.

  13. Silicon surface passivation by metal layers for low-temperature epitaxy

    NASA Astrophysics Data System (ADS)

    Kühnle, Jürgen; Bergmann, Ralf; Werner, Jürgen H.; Albrecht, Martin

    1996-06-01

    A novel surface passivation technique permits low-temperature homoepitaxy of Si above the stability limit (450°C) of a conventional hydrogen passivation. An evaporated metal film replaces the hydrogen passivation by a more stable metal layer and thus allows for epitaxial growth up to 570°C. Our passivation by a metal layer (PAMELA) technique is particularly suitable for liquid phase epitaxy.

  14. Metallic wave-impedance matching layers for broadband terahertz optical systems.

    PubMed

    Kröll, Josef; Darmo, Juraj; Unterrainer, Karl

    2007-05-28

    We examine the potential of ultra-thin metallic layers for broadband wave-impedance matching in the terahertz frequency range. The metallic layer is modeled using Fresnel formulae for stratified optical medium. Experimental data for chromium and indium-tin-oxide layers, measured using time-domain terahertz spectroscopy over the frequency range 0.4 - 4.5 THz, are compared with theoretical results.

  15. Influence of head size on the development of metallic wear and on the characteristics of carbon layers in metal-on-metal hip joints

    PubMed Central

    Sprecher, Christoph M; Wimmer, Markus A; Milz, Stefan; Taeger, Georg

    2009-01-01

    Background and purpose Particles originating from the articulating surfaces of hip endoprostheses often induce an inflammatory response, which can be related to implant failure. We therefore analyzed the metal content in capsular tissue from 44 McKee-Farrar metal-on-metal hip prostheses (with 3 different head sizes) and we also analyzed the morphological structure of layers located on articulating surfaces. Methods Atomic absorption spectrometry (AAS) was used to analyze the metal content in capsular tissue. Visually detectable carbon layers located on the articulating surfaces were evaluated using scanning electron microscopy (SEM), energy-dispersive Xray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). Results Metallic debris was detected in all capsular tissue samples but no statistically significant differences in metal content were found in relation to implant head size. The morphological characteristics of the different layer zones allowed an exact analysis of contact and non-contact areas. Furthermore, surface layers appear to have a protective function because they can prevent sharp-edged particles from damaging the prostheses surface. Interpretation The implant head size does not appear to influence the amount of metallic debris. The layers obviously act like a lubricating agent because the protection function does not occur in regions without layers where the metal surface often shows numerous scratches. As layers are not generated immediately after the implantation of hip prostheses, these findings may at least partially explain the high amount of wear early after implantation. PMID:19421914

  16. Subwavelength imaging at optical frequencies using a transmission device formed by a periodic layered metal-dielectric structure operating in the canalization regime

    NASA Astrophysics Data System (ADS)

    Belov, Pavel A.; Hao, Yang

    2006-03-01

    Imaging with subwavelength resolution using a periodic metal-dielectric layered structure is demonstrated. The structure operates in canalization regime as a transmission device and it does not involve negative refraction and amplification of evanescent modes. The thickness of the structure has to be an integer number of half-wavelengths and can be made as large as required for ceratin applications, in contrast to the solid metallic slabs operating with subwavelength resolution which have to be much thinner than the wavelength. Resolution of λ/20 at 600nm wavelength is confirmed by numerical simulation for a 300nm thick structure formed by a periodic stack of 10nm layers of glass with ɛ=2 and 5nm layers of metal-dielectric composite with ɛ=-1 . Resolution of λ/60 is predicted for a structure with same thickness, period and operating frequency, but formed by 7.76nm layers of silicon with ɛ=15 and 7.24nm layers of silver with ɛ=-14 .

  17. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

    PubMed

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-06-07

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.

  18. Linear increase of the modal gain in 1.3 µm InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers.

    PubMed

    Salhi, A; Rainò, G; Fortunato, L; Tasco, V; Martiradonna, L; Todaro, M T; De Giorgi, M; Cingolani, R; Passaseo, A; Luna, E; Trampert, A; De Vittorio, M

    2008-07-09

    The authors have recently demonstrated the enhancement of the quantum dot laser modal gain, linearly scaling with the number of stacked QD layers. These results allowed the achievement of multi-quantum dot (MQD) lasers, the zero-dimensional counterpart of MQW lasers, with a modal gain as high as 42 cm(-1), in a seven-layer structure. A detailed investigation of the structural and optical properties was performed on laser structures with three, five and seven QD layers. Such an investigation clearly shows that the high uniformity of QD layer features is responsible for the linear increase of the modal gain and its high value.

  19. Toward the self-assembly of metal-organic nanotubes using metal-metal and π-stacking interactions: bis(pyridylethynyl) silver(I) metallo-macrocycles and coordination polymers.

    PubMed

    Kilpin, Kelly J; Gower, Martin L; Telfer, Shane G; Jameson, Geoffrey B; Crowley, James D

    2011-02-07

    Shape-persistent macrocycles and planar organometallic complexes are beginning to show considerable promise as building blocks for the self-assembly of a variety of supramolecular materials including nanofibers, nanowires, and liquid crystals. Here we report the synthesis and characterization of a family of planar di- and tri-silver(I) containing metallo-macrocycles designed to self-assemble into novel metal-organic nanotubes through a combination of π-stacking and metal-metal interactions. The silver(I) complexes have been fully characterized by elemental analysis, high resolution electrospray ionization mass spectrometry (HR-ESI-MS), IR, (1)H and (13)C NMR spectroscopy, and the solution data are consistent with the formation of the metallo-macrocycles. Four of the complexes have been structurally characterized using X-ray crystallography. However, only the di-silver(I) complex formed with 1,3-bis(pyridin-3-ylethynyl)benzene is found to maintain its macrocyclic structure in the solid state. The di-silver(I) shape-persistent macrocycle assembles into a nanoporous chicken-wire like structure, and ClO(4)(-) anions and disordered H(2)O molecules fill the pores. The silver(I) complexes of 2,6-bis(pyridin-3-ylethynyl)pyridine and 1,4-di(3-pyridyl)buta-1,3-diyne ring-open and crystallize as non-porous coordination polymers.

  20. Structural color-tunable mesoporous bragg stack layers based on graft copolymer self-assembly for high-efficiency solid-state dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Chang Soo; Park, Jung Tae; Kim, Jong Hak

    2016-08-01

    We present a facile fabrication route for structural color-tunable mesoporous Bragg stack (BS) layers based on the self-assembly of a cost-effective graft copolymer. The mesoporous BS layers are prepared through the alternating deposition of organized mesoporous-TiO2 (OM-TiO2) and -SiO2 (OM-SiO2) films on the non-conducting side of the counter electrode in dye-sensitized solar cells (DSSCs). The OM layers with controlled porosity, pore size, and refractive index are templated with amphiphilic graft copolymers consisting of poly(vinyl chloride) backbones and poly(oxyethylene methacrylate) side chains, i.e., PVC-g-POEM. The morphology and properties of the structural color-tunable mesoporous BS-functionalized electrodes are characterized using energy filtered transmission electron microscopy (EF-TEM), field emission-scanning electron microscopy (FE-SEM), spectroscopic ellipsometry, and reflectance spectroscopy. The solid-state DSSCs (ssDSSCs) based on a structural color-tunable mesoporous BS counter electrode with a single-component solid electrolyte show an energy conversion efficiency (η) of 7.1%, which is much greater than that of conventional nanocrystalline TiO2-based cells and one of the highest values for N719 dye-based ssDSSCs. The enhancement of η is due to the enhancement of current density (Jsc), attributed to the improved light harvesting properties without considerable decrease in fill factor (FF) or open-circuit voltage (Voc), as confirmed by incident photon-to-electron conversion efficiency (IPCE) and electrochemical impedance spectroscopy (EIS).

  1. Experimental investigation on coupling flows between liquid and liquid metal layers

    NASA Astrophysics Data System (ADS)

    Yano, Kanako; Tasaka, Yuji; Murai, Yuichi; Takeda, Yasushi; Yanagisawa, Takatoshi

    2008-11-01

    This study aims to clarify coupling of flows between liquid metal and other usual liquids, e.g. water or oil, in fluid dynamical systems. In past studies for two-layer Rayleigh-Bénard system where the immiscible two liquids are layered, two types of coupling were observed; these are called as ``mechanical coupling'' and ``thermal coupling.'' As a typical character of low Pr fluid, large-scale structure in the liquid metal layer has oscillating motion. In this study we investigate ``thermal coupling'' especially how the oscillation of cells in the liquid metal layer propagates to the upper liquid layer and vice versa by changing a ratio of the height of the layers and viscosity of the upper layer fluid. Visualization of the liquid metal motion was conducted by means of ultrasonic velocity profiling, and then the oscillating motion is expressed on the space-time velocity map. PIV measurement of the upper, transparent fluid layer shows the modulation of the convective motion due to the oscillation in the liquid metal layer. Point-wise measurement of temperature at several positions in the fluid layer represents the modulation quantitatively.

  2. Stacking Up

    ERIC Educational Resources Information Center

    Naylor, Jim

    2005-01-01

    Chimneys and stacks appear to be strong and indestructible, but chimneys begin to deteriorate from the moment they are built. Early on, no signs are apparent; but deterioration accelerates in subsequent years, and major repairs are soon needed instead of minor maintenance. With proper attention, most structures can be repaired and continue to…

  3. Stacking Up

    ERIC Educational Resources Information Center

    Naylor, Jim

    2005-01-01

    Chimneys and stacks appear to be strong and indestructible, but chimneys begin to deteriorate from the moment they are built. Early on, no signs are apparent; but deterioration accelerates in subsequent years, and major repairs are soon needed instead of minor maintenance. With proper attention, most structures can be repaired and continue to…

  4. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  5. Masking ability of opaque thickness on layered metal-ceramic.

    PubMed

    Pieper, Cari M; Waldemarin, Renato Fa; Camacho, Guilherme B

    2016-09-01

    This study evaluated the masking ability of two opaques applied in different thicknesses. Eighty NiCr metal discs 16 mm in diameter and 1.0 mm thick were prepared. The disks were divided into 8 groups (n = 10). Ceramic opaque in paste (groups 1 to 4) or powder (groups 5 to 8) presentations were applied. They were machined with aluminum oxide burs to the following thicknesses: G1 and G5 = 0.10 mm; G2 and G6 = 0.15 mm; G3 and G7 = 0.20 mm and G4 and G8 = 0.30 mm. Dentin ceramic 0.7 mm thick was applied over these discs, sintered and glazed according manufacturer's instructions. Color was assessed with a Minolta CR10 spectrocolorimeter on the CIELab scale. Powder opaque had higher values on (L) and (ΔE) variables, and lower values on (a) and (b) variables compared to paste opaque. For opaque thickness, 0.10 mm had higher ΔE than all other thicknesses. L values were higher for 0.20 mm and 0.30 mm. Lowest and highest a* values were observed for 0.10 mm and 0.30 mm, respectively. No difference was observed for b* values. There were differences between paste and powder opaque types; 0.10 mm thickness behaves differently from the other thicknesses, with higher ΔE, while 0.15 mm does not differ statistically from thicker layers. Sociedad Argentina de Investigación Odontológica.

  6. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    NASA Astrophysics Data System (ADS)

    Kanematsu, Masayuki; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-08-01

    We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance-voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.

  7. New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts.

    PubMed

    Lee, Su Yeong; Yun, Won Seok; Lee, J D

    2017-03-01

    Schottky barrier height and carrier polarity are seminal concepts for a practical device application of the interface between semiconductor and metal electrode. Investigation of those concepts is usually made by a conventional method such as the Schottky-Mott rule, incorporating the metal work function and semiconductor electron affinity, or the Fermi level pinning effect, resulting from the metal-induced gap states. Both manners are, however, basically applied to the bulk semiconductor metal contacts. To explore few-layer black phosphorus metal contacts far from the realm of bulk, we propose a new method to determine the Schottky barrier by scrutinizing the layer-by-layer phosphorus electronic structure from the first-principles calculation combined with the state-of-the-art band unfolding technique. In this study, using the new method, we calculate the Schottky barrier height and determine the contact polarity of Ti, Sc, and Al metal contacts to few-layer (mono-, bi-, tri-, and quadlayer) black phosphorus. This gives a significant physical insight toward the utmost layer-by-layer manipulation of electronic properties of few-layer semiconductor metal contacts.

  8. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

    PubMed

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-18

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  9. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

    NASA Astrophysics Data System (ADS)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-01

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  10. Using optical diagnostics to determine the melt temperature field in layer-by-layer laser alloying of metal powder

    NASA Astrophysics Data System (ADS)

    Zavalov, Yu. N.; Dubrov, A. V.; Mirzade, F. Kh.; Dubrovin, N. G.; Makarova, E. S.; Dubrov, V. D.

    2017-07-01

    The results of application of optical diagnostics in the estimation of the temperature field at the melt surface in layer-by-layer laser alloying of metal powder are presented. It is demonstrated that surface concavity induced by the thermocapillary effect upon nonuniform heating may distort pyrometry data considerably. The use of external illumination provides an opportunity to determine the shape of the melt surface. The obtained minimum estimate of the temperature gradient in the metal region affected by laser radiation is 2.8 × 104 K/cm.

  11. Morphology controlled nanostructures self-assembled from phthalocyanine derivatives bearing alkylthio moieties: effect of sulfur-sulfur and metal-ligand coordination on intermolecular stacking.

    PubMed

    Hao, Zijuan; Wu, Xingcui; Sun, Ranran; Ma, Changqin; Zhang, Xiaomei

    2012-01-16

    To investigate the effect of sulfur-sulfur and metal-ligand coordination on the molecular structure and morphology of self-assembled nanostructures, metal-free 2,3,9,10,16,17,23,24-octakis(isopropylthio)phthalocyanine H(2)Pc(β-SC(3)H(7))(8) (1) and its copper and lead congeners CuPc(β-SC(3)H(7))(8) (2) and PbPc(β-SC(3)H(7))(8) (3) are synthesized and fabricated into organic nanostructures by a phase-transfer method. The self-assembly properties are investigated by electronic absorption and Fourier transform infrared (FTIR) spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). Experimental results reveal different molecular packing modes in these aggregates, which in turn result in self-assembled nanostructures with different morphologies ranging from nanobelts for 1 through nanoribbons for 2 to cluster nanoflowers for 3. Intermolecular π-π and sulfur-sulfur interactions between metal-free phthalocyanine 1 lead to the formation of nanobelts. The additional Cu-S coordination bond between the central copper ion of 2 and the sulfur atom of the adjacent molecule of 2 in cooperation with the intermolecular π-π stacking interaction increases the intermolecular interaction, and results in the formation of long nanoribbons for 2. In contrast to compounds 1 and 2, the special molecular structure of complex 3, together with the intermolecular π-π stacking interaction and additional Pb-S coordination bond, induces the formation of Pb-connected pseudo-double-deckers during the self-assembly process, which in turn further self-assemble into cluster nanoflowers. In addition, good semiconducting properties of the nanostructures fabricated from phthalocyanine derivatives 1-3 were also revealed by I-V measurements. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Polarization-dependent plasmonic coupling in dual-layer metallic structures at terahertz frequencies.

    PubMed

    Zhang, Zhong Xiang; Chan, Kam Tai

    2011-01-31

    Dual-layer metallic wire-hole structures were fabricated and their terahertz transmission properties were measured. They exhibit polarization-dependent transmittance with large extinction ratios. Simulation and experimental results on structures with different wire-to-hole orientations provide strong evidence that the resonance peaks are caused by plasmonic coupling between the two metallic layers. A simplified LC-circuit model is proposed to explain the coupling mechanism and to estimate the peak frequencies. Our results suggest that specific electromagnetic response can be achieved by appropriate design of the geometrical patterns on the two metallic layers and a suitable polarization of the incident wave.

  13. Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Gupta, Richa; Rajput, Renu; Prasher, Rakesh; Vaid, Rakesh

    2016-09-01

    We report the fabrication of an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL) for n-Si/ALD-HfO2 gate stack with reduced leakage current. The XRD, AFM, FTIR, FESEM and EDAX characterizations have been performed for structural and morphological studies. Electrical parameters such as dielectric constant (K), interface trap density (Dit), leakage current density (J), effective oxide charge (Qeff), barrier height (Φbo), ideality factor (ƞ), breakdown-voltage (Vbr) and series resistance (Rs) were extracted through C-V, G-V and I-V measurements. The determined values of K, Dit, J, Qeff, Φbo, ƞ, Vbr and Rs are 14.4, 0.5 × 10 11 eV-1 cm-2, 2.2 × 10-9 A/cm2, 0.3 × 1013 cm-2, 0.42, 2.1, -0.33 and 14.5 MΩ respectively. SiON growth prior to HfO2 deposition has curtailed the problem of high leakage current density and interfacial traps due to sufficient amount of N2 incorporated at the interface.

  14. Electronically decoupled stacking fault tetrahedra embedded in Au(111) films

    NASA Astrophysics Data System (ADS)

    Schouteden, Koen; Amin-Ahmadi, Behnam; Li, Zhe; Muzychenko, Dmitry; Schryvers, Dominique; Van Haesendonck, Chris

    2016-12-01

    Stacking faults are known as defective structures in crystalline materials that typically lower the structural quality of the material. Here, we show that a particular type of defect, that is, stacking fault tetrahedra (SFTs), exhibits pronounced quantized electronic behaviour, revealing a potential synthetic route to decoupled nanoparticles in metal films. We report on the electronic properties of SFTs that exist in Au(111) films, as evidenced by scanning tunnelling microscopy and confirmed by transmission electron microscopy. We find that the SFTs reveal a remarkable decoupling from their metal surroundings, leading to pronounced energy level quantization effects within the SFTs. The electronic behaviour of the SFTs can be described well by the particle-in-a-box model. Our findings demonstrate that controlled preparation of SFTs may offer an alternative way to achieve well-decoupled nanoparticles of high crystalline quality in metal thin films without the need of thin insulating layers.

  15. Electronically decoupled stacking fault tetrahedra embedded in Au(111) films

    PubMed Central

    Schouteden, Koen; Amin-Ahmadi, Behnam; Li, Zhe; Muzychenko, Dmitry; Schryvers, Dominique; Van Haesendonck, Chris

    2016-01-01

    Stacking faults are known as defective structures in crystalline materials that typically lower the structural quality of the material. Here, we show that a particular type of defect, that is, stacking fault tetrahedra (SFTs), exhibits pronounced quantized electronic behaviour, revealing a potential synthetic route to decoupled nanoparticles in metal films. We report on the electronic properties of SFTs that exist in Au(111) films, as evidenced by scanning tunnelling microscopy and confirmed by transmission electron microscopy. We find that the SFTs reveal a remarkable decoupling from their metal surroundings, leading to pronounced energy level quantization effects within the SFTs. The electronic behaviour of the SFTs can be described well by the particle-in-a-box model. Our findings demonstrate that controlled preparation of SFTs may offer an alternative way to achieve well-decoupled nanoparticles of high crystalline quality in metal thin films without the need of thin insulating layers. PMID:28008910

  16. Electronically decoupled stacking fault tetrahedra embedded in Au(111) films.

    PubMed

    Schouteden, Koen; Amin-Ahmadi, Behnam; Li, Zhe; Muzychenko, Dmitry; Schryvers, Dominique; Van Haesendonck, Chris

    2016-12-23

    Stacking faults are known as defective structures in crystalline materials that typically lower the structural quality of the material. Here, we show that a particular type of defect, that is, stacking fault tetrahedra (SFTs), exhibits pronounced quantized electronic behaviour, revealing a potential synthetic route to decoupled nanoparticles in metal films. We report on the electronic properties of SFTs that exist in Au(111) films, as evidenced by scanning tunnelling microscopy and confirmed by transmission electron microscopy. We find that the SFTs reveal a remarkable decoupling from their metal surroundings, leading to pronounced energy level quantization effects within the SFTs. The electronic behaviour of the SFTs can be described well by the particle-in-a-box model. Our findings demonstrate that controlled preparation of SFTs may offer an alternative way to achieve well-decoupled nanoparticles of high crystalline quality in metal thin films without the need of thin insulating layers.

  17. Combining field-amplified sample stacking with moving reaction boundary electrophoresis on a paper chip for the preconcentration and separation of metal ions.

    PubMed

    Ouyang, Liangfei; Liu, Qian; Liang, Heng

    2017-02-01

    A common drawback of paper-based separation devices is their poor detection limit. In this study, we combined field-amplified sample stacking with moving reaction boundary electrophoresis on a paper chip with six array channels for the parallel separation and concentration of multiple samples. With a new hyphenated technique, the brown I2 from the Fe(3+) /I(-) oxidation-reduction reaction emerged near the boundary between the dilute ethylene diamine tetraacetic acid and potassium iodide and highly concentrated KCl solutions. For the separation and concentration of three components, Cr(3+) , Cu(2+) , and Fe(3+) , the Fe(3+) detection limit was improved at least 266-fold by comparing the hyphenated technique with moving reaction boundary electrophoresis. The detection limit of Fe(3+) was found to be as low as 0.34 ng (20 μM) on the paper chip. We also demonstrated the analysis of a real sample of four metal ions, with detection limits as follows: 0.16 μg Cr(3+) , 1.5 μg Ni(2+) , 0.64 μg Cu(2+) , and 1.5 μg Co(2+) . The synergy of field-amplified sample stacking and moving reaction boundary electrophoresis in the micron paper-based array channels dramatically improved the detection limit and throughput of paper-based electrophoresis.

  18. The Deep2 Galaxy Redshift Survey: Mean Ages and Metallicities ofRed Field Galaxies at Z ~; 0.9 from Stacked Keck/Deimos Spectra

    SciTech Connect

    Schiavon, Ricardo P.; Faber, S.M.; Konidaris, Nicholas; Graves,Genevieve; Willmer, Christopher N.A.; Weiner, Benjamin J.; Coil, AlisonL.; Cooper, Michael C.; Davis, Marc; Harker, Justin; Koo, David C.; Newman, Jeffrey A.; Yan, Renbin

    2006-10-19

    As part of the DEEP2 galaxy redshift survey, we analyze absorption line strengths in stacked Keck/DEIMOS spectra of red field galaxies with weak to no emission lines, at redshifts 0.7 {approx}< z {approx}< 1. Comparison with models of stellar population synthesis shows that red galaxies at z {approx} 0:9 have mean luminosity-weighted ages of the order of only 1 Gyr and at least solar metallicities. These ages cannot be reconciled with a scenario where all stars evolved passively after forming at very high z. Rather, a significant fraction of stars can be no more than 1 Gyr old, which means that some star formation in the stacked populations continued to at least z {approx} 1:2. Furthermore, a comparison of these distant galaxies with a local SDSS sample, using stellar populations synthesis models, shows that the drop in the equivalent width of H{delta} from z {approx} 0:9 to 0.1 is less than predicted by passively evolving models. This admits of two interpretations: either each individual galaxy experiences continuing low-level star formation, or the red-sequence galaxy population from z {approx} 0:9 to 0.1 is continually being added to by new galaxies with younger stars.

  19. Embedding Metal in the Interface of a p-n Heterojunction with a Stack Design for Superior Z-Scheme Photocatalytic Hydrogen Evolution.

    PubMed

    Yin, Wenjie; Bai, Lijie; Zhu, Yuzhen; Zhong, Shuxian; Zhao, Leihong; Li, Zhengquan; Bai, Song

    2016-09-07

    The construction of a p-n heterojunction is an efficient strategy to resolve the limited light absorption and serious charge-carrier recombination in semiconductors and enhance the photocatalytic activity. However, the promotion effect is greatly limited by poor interfacial charge transfer efficiency as well as reduced redox ability of charge carriers. In this work, we demonstrate that the embedding of metal Pd into the interface between n-type C3N4 and p-type Cu2O can further enhance the interfacial charge transfer and increase the redox ability of charge carriers through the design of the C3N4-Pd-Cu2O stack nanostructure. The embedded Pd nanocubes in the stack structure not only trap the charge carriers from the semiconductors in promoting the electron-hole separation but also act as a Z-scheme "bridge" in keeping the strong reduction/oxidation ability of the electrons/holes for surface reactions. Furthermore, Pd nanocubes also increase the bonding strength between the two semiconductors. Enabled by this unique design, the hydrogen evolution achieved is dramatically higher than that of its counterpart C3N4-Cu2O structure without Pd embedding. The apparent quantum efficiency (AQE) is 0.9% at 420 nm for the designed C3N4-Pd-Cu2O. This work highlights the rational interfacial design of heterojunctions for enhanced photocatalytic performance.

  20. Superior Stable and Long Life Sodium Metal Anodes Achieved by Atomic Layer Deposition.

    PubMed

    Zhao, Yang; Goncharova, Lyudmila V; Lushington, Andrew; Sun, Qian; Yadegari, Hossein; Wang, Biqiong; Xiao, Wei; Li, Ruying; Sun, Xueliang

    2017-03-03

    Na-metal batteries are considered as the promising alternative candidate for Li-ion battery beneficial from the wide availability and low cost of sodium, high theoretical specific capacity, and high energy density based on the plating/stripping processes and lowest electrochemical potential. For Na-metal batteries, the crucial problem on metallic Na is one of the biggest challenges. Mossy or dendritic growth of Na occurs in the repetitive Na stripping/plating process with an unstable solid electrolyte interphase layer of nonuniform ionic flux, which can not only lead to the low Coulombic efficiency, but also can create short circuit risks, resulting in possible burning or explosion. In this communication, the atomic layer deposition of Al2 O3 coating is first demonstrated for the protection of metallic Na anode for Na-metal batteries. By protecting Na foil with ultrathin Al2 O3 layer, the dendrites and mossy Na formation have been effectively suppressed and lifetime has been significantly improved. Furthermore, the thickness of protective layer has been further optimized with 25 cycles of Al2 O3 layer presenting the best performance over 500 cycles. The novel design of atomic layer deposition protected metal Na anode may bring in new opportunities to the realization of the next-generation high energy-density Na metal batteries.

  1. Image stacking approach to increase sensitivity of fluorescence detection using a low cost complementary metal-oxide-semiconductor (CMOS) webcam

    PubMed Central

    Balsam, Joshua; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

    2013-01-01

    Optical technologies are important for biological analysis. Current biomedical optical analyses rely on high-cost, high-sensitivity optical detectors such as photomultipliers, avalanched photodiodes or cooled CCD cameras. In contrast, Webcams, mobile phones and other popular consumer electronics use lower-sensitivity, lower-cost optical components such as photodiodes or CMOS sensors. In order for consumer electronics devices, such as webcams, to be useful for biomedical analysis, they must have increased sensitivity. We combined two strategies to increase the sensitivity of CMOS-based fluorescence detector. We captured hundreds of low sensitivity images using a Webcam in video mode, instead of a single image typically used in cooled CCD devices.We then used a computational approach consisting of an image stacking algorithm to remove the noise by combining all of the images into a single image. While video mode is widely used for dynamic scene imaging (e.g. movies or time-lapse photography), it is not used to capture a single static image, which removes noise and increases sensitivity by more than thirty fold. The portable, battery-operated Webcam-based fluorometer system developed here consists of five modules: (1) a low cost CMOS Webcam to monitor light emission, (2) a plate to perform assays, (3) filters and multi-wavelength LED illuminator for fluorophore excitation, (4) a portable computer to acquire and analyze images, and (5) image stacking software for image enhancement. The samples consisted of various concentrations of fluorescein, ranging from 30 μM to 1000 μM, in a 36-well miniature plate. In the single frame mode, the fluorometer's limit-of-detection (LOD) for fluorescein is ∼1000 μM, which is relatively insensitive. However, when used in video mode combined with image stacking enhancement, the LOD is dramatically reduced to 30 μM, sensitivity which is similar to that of state-of-the-art ELISA plate photomultiplier-based readers. Numerous medical

  2. Characterization of metal oxide layers grown on CVD graphene

    SciTech Connect

    Matsubayashi, Akitomo; Abel, Joseph; Prasad Sinha, Dhiraj; Lee, Ji Ung; LaBella, Vincent P.

    2013-03-15

    Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

  3. Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes

    DOEpatents

    Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

    2014-04-01

    A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

  4. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  5. The Deformation of the Multi-Layered Panel of Sheet Metals Under Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Wook; Woo, Dong-Uk

    A Molten Carbonate Fuel Cell (MCFC) stack consists of several layered unit cells. In each unit cell, the stiff structure of the separator plate contains the softer components, such as electrodes. When surface pressure acts on the stack over an extended period of time at elevated temperatures, the stiffness of the separator plate tends to degrade. Moreover, the demands for large electrode area (to increase the electric capacity of a unit cell) and thinner separator plates (to reduce weight) complicate the design of a separator plate with high stiffness. To evaluate the stiffness of the separator plate at elevated temperatures, we design and test a tiny, multi-layered separator plate specimen using a three-point bending tool. To determine the optimal structure of the separator plate, we investigate three design factors: angle, pitch and height. We adopt the Taguchi method to evaluate the experiments, and use finite element analysis to examine the experimental results. Based on these results, pitch is the most effective of these factors. As the pitch narrows, the stiffness of the separator plate increases. Therefore, we propose the pitch factor as a design criterion for the separator plate of the MCFC stack.

  6. Modeling Metallic Ion Transport During the Lifetime of an Intermediate Layer

    NASA Astrophysics Data System (ADS)

    Bishop, R. L.; Earle, G. D.

    2001-05-01

    Intermediate layers are one of several phenomena that occur at midlatitudes in the nighttime E region. These ionization layers which typically form on the bottomside of the F region, are frequently observed by the Arecibo Incoherent Scatter Facility. Although their occurrence is relatively common, they exhibit diverse structure. Their altitude of formation, vertical thickness, and motion show significant nightly variations. Layer structure is influenced by a number of factors including composition, electric fields, and fluctuations in the neutral wind field. A numerical simulation has been employed to investigate the effects of composition on layer development. Specifically, the simulation, named LEAD (Layer Evolution And Dynamics), explores the transport of metallic ions during the formation and subsequent motion of a layer due to a time varying meridional wind field. We discuss the relative molecular/metallic ratio inside the layer during its evolution, the time scales for metallic ion dominance within the layer, and the motion of metallic ions in the adjacent altitude regions. We present animated results from LEAD which allow detailed inspection of ion composition variations throughout the process of layer evolution and descent.

  7. ZnO buffer layer for metal films on silicon substrates

    SciTech Connect

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  8. Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

    SciTech Connect

    Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

    2007-05-15

    An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water.

  9. Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology

    NASA Astrophysics Data System (ADS)

    Dentoni Litta, Eugenio; Hellström, Per-Erik; Henkel, Christoph; Östling, Mikael

    2014-08-01

    This work presents a characterization of the electrical properties of thulium silicate thin films, within the scope of a possible application as IL (interfacial layer) in scaled high-k/metal gate CMOS technology. Silicate formation is investigated over a wide temperature range (500-900 °C) through integration in MOS capacitor structures and analysis of the resulting electrical properties. The results are compared to those obtained from equivalent devices integrating lanthanum silicate interfacial layers. The thulium silicate IL is formed through a gate-last CMOS-compatible process flow, providing IL EOT of 0.1-0.3 nm at low formation temperature and interface state density at flatband condition below 2 × 1011 cm-2 eV-1. The effects of a possible integration in a gate-first process flow with a maximum thermal budget of 1000 °C are also evaluated, achieving an IL EOT of 0.2-0.5 nm, an interface state density at flatband condition ∼1 × 1011 cm-2 eV-1 and a reduction in gate leakage current density of one order of magnitude compared to the same stack without IL.

  10. Iridium Interfacial Stack - IrIS

    NASA Technical Reports Server (NTRS)

    Spry, David

    2012-01-01

    Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the Si

  11. PieceStack: Toward Better Understanding of Stacked Graphs.

    PubMed

    Wu, Tongshuang; Wu, Yingcai; Shi, Conglei; Qu, Huamin; Cui, Weiwei

    2016-02-24

    Stacked graphs have been widely adopted in various fields, because they are capable of hierarchically visualizing a set of temporal sequences as well as their aggregation. However, because of visual illusion issues, connections between overly-detailed individual layers and overly-generalized aggregation are intercepted. Consequently, information in this area has yet to be fully excavated. Thus, we present PieceStack in this paper, to reveal the relevance of stacked graphs in understanding intrinsic details of their displayed shapes. This new visual analytic design interprets the ways through which aggregations are generated with individual layers by interactively splitting and re-constructing the stacked graphs. A clustering algorithm is designed to partition stacked graphs into sub-aggregated pieces based on trend similarities of layers. We then visualize the pieces with augmented encoding to help analysts decompose and explore the graphs with respect to their interests. Case studies and a user study are conducted to demonstrate the usefulness of our technique in understanding the formation of stacked graphs.

  12. Emerging interface dipole versus screening effect in copolymer/metal nano-layered systems

    NASA Astrophysics Data System (ADS)

    Torrisi, V.; Ruffino, F.; Liscio, A.; Grimaldi, M. G.; Marletta, G.

    2015-12-01

    Despite to the importance on the charge carrier injection and transport at organic/metal interface, there is yet an incomplete estimation of the various contribution to the overall dipole. This work shows how the mapping of the surface potential performed by Kelvin Probe Force Microscopy (KPFM) allows the direct observation of the interface dipole within an organic/metal multilayered structure. Moreover, we show how the sub-surface sensitivity of the KPFM depends on the thickness and surface coverage of the metallic layer. This paper proposes a way to control the surface potential of the exposed layer of an hybrid layered system by controlling the interface dipole at the organic/metal interface as a function of the nanometer scale thickness and the surface coverage of the metallic layer. We obtained a layered system constituted by repeated sequence of a copolymer film, poly(n-butylacrylate)-b-polyacrilic acid, and Au layer. We compared the results obtained by means of scanning probe microscopy technique with the results of the KPFM technique, that allows us to obtain high-contrast images of the underlying layer of copolymer behind a typical threshold, on the nanoscale, of the thickness of the metal layer. We considered the effect of the morphology of the gold layer on the covered area at different thicknesses by using the scanning electron microscopy technique. This finding represents a step forward towards the using of dynamic atomic force microscopy based characterization to explore the electrical properties of the sub-surface states of layered nanohybrid, that is a critical point for nanohybrid applications in sensors and energy storage devices.

  13. Double sporadic metal layers as observed by colocated Fe and Na lidars at Wuhan, China

    NASA Astrophysics Data System (ADS)

    Wang, Xiaodong; Yi, Fan; Huang, Kaiming

    2017-02-01

    In this paper, we report a set of double sporadic layer events observed by Fe and Na lidars over Wuhan, China. The two sporadic metal layers above normal layer were named as upper and middle sporadic metal layers, respectively. In these events, the upper, middle, and normal Fe layers presented altitude separately. There were nine double sporadic Fe events observed in 163 nights during 2010-2013. Eight of the nine events were observed in summer. The maximum ratios of peak density for upper and middle sporadic Fe layers to normal Fe layer were up to 375% and 225%, respectively. The peak altitudes of upper (middle) sporadic Fe layers were in the range of 102-107 km (95-98.5 km). The double sporadic Fe layers lasted more than 2 h. Interestingly, we found that density enhancement occurred simultaneously in upper, middle, and normal Fe layers on two events. On the nine Fe events, there existed five nights of colocated Na lidar observations. We found that double sporadic Na and Fe layers simultaneously appeared. They presented similar structures, altitudes, and temporal variations in all five compared events. A little different from Fe, the middle sporadic Na layer was not separated from Na main layer maybe for the wide altitude range of Na main layer. The ratios of upper (middle) sporadic Fe and Na peak values were in the range of 6.6-52 (0.57-6.58). While the exact formation mechanism responsible for double sporadic metal layers is still unclear, some possible explanations and corresponding observations are discussed.

  14. Spectral and total temperature-dependent emissivities of few-layer structures on a metallic substrate.

    PubMed

    Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe

    2016-01-25

    We investigate the thermal radiative emission of few-layer structures deposited on a metallic substrate and its dependence on temperature with the Fluctuational Electrodynamics approach. We highlight the impact of the variations of the optical properties of metallic layers on their temperature-dependent emissivity. Fabry-Pérot spectral selection involving at most two transparent layers and one thin reflective layer leads to well-defined peaks and to the amplification of the substrate emission. For a single Fabry-Pérot layer on a reflective substrate, an optimal thickness that maximizes the emissivity of the structure can be determined at each temperature. A thin lossy layer deposited on the previous structure can enhance interference phenomena, and the analysis of the participation of each layer to the emission shows that the thin layer is the main source of emission. Eventually, we investigate a system with two Fabry-Pérot layers and a metallic thin layer, and we show that an optimal architecture can be found. The total hemispherical emissivity can be increased by one order of magnitude compared to the substrate emissivity.

  15. Proliferation of the synovial lining cell layer in suggested metal hypersensitivity.

    PubMed

    Burkandt, Andreas; Katzer, Alexander; Thaler, Karlheinz; Von Baehr, Volker; Friedrich, Reinhard E; Rüther, Wolfgang; Amling, Michael; Zustin, Jozef

    2011-01-01

    Synovial tissues in joints with prostheses display characteristic morphological changes in cases with aseptic failure, particularly macrophage infiltration. Since proliferation of the synovial lining cell layer represents a feature characteristic of autoimmune joint diseases, the possibility of morphological changes of the synovial lining cell layer in periprosthetic tissues was investigated. Synovial biopsies from five groups of morphologically well-defined lesions (osteoarthritis, rheumatoid arthritis, aseptic loosened metal-on-polyethylene and metal-on-metal arthroplasty and suggested metal hypersensitivity) were compared using a conventional staining method and immunohistochemistry. The synovial lining cell layer was substantially enlarged in both rheumatoid arthritis and cases suggestive of metal hypersensitivity. Macrophage infiltrates were apparent in rheumatoid arthritis and all specimens from retrieved hip arthroplasties. Although both synovial and subsynovial macrophages were positive for CD163 (indicating synovial M2 macrophages), the remaining fibroblast-like synoviocytes and scattered stromal fibroblasts showed a positive reaction with the D2-40 antibody (indicating fibroblast-like synoviocytes). Furthermore, in contrast to CD163-positive macrophages, the enlarged D2-40-positive fibroblast-like synoviocytes displayed cytoplasmatic tubular projections. Proliferation of the periprosthetic synovial lining cell layer occurred in cases with unexplained groin pain following metal-on-metal hip resurfacing arthroplasty, suggestive of hypersensitivity. Despite some important study limitations, the present observation adds to the evidence that metal hypersensitivity shares characteristic morphological features with autoimmune diseases of the joints.

  16. Construction of layered structures on valve metal alloys by microplasma oxidation

    NASA Astrophysics Data System (ADS)

    Baranova, T. A.; Chubenko, A. K.; Mamaev, A. I.; Mamaeva, V. A.; Kovalskaya, Ya B.

    2016-11-01

    Process of layered structure materials creation based on aluminum alloys is presented. Microplasma texturing method, microplasma oxidation method and chemical metallization method were used to create these structures. Non-conductive nonmetallic inorganic coatings were produced by microplasma oxidation method. Obtained structures showed high durability under thermal stress loads due to substrate metal - non-conductive nonmetallic inorganic coating phase boundary texturing.

  17. Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

    NASA Astrophysics Data System (ADS)

    Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

    2017-06-01

    A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

  18. Surface and Interface Chemistry for Gate Stacks on Silicon

    NASA Astrophysics Data System (ADS)

    Frank, M. M.; Chabal, Y. J.

    This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

  19. Modeling and Simulation of Ballistic Penetration of Ceramic-Polymer-Metal Layered Systems

    DTIC Science & Technology

    2016-01-01

    foam 0.32 18 [18] Backing metal Aluminum 6061-T6 (Al) 2.70 23 [19] Projectile Tungsten Heavy Alloy (WHA) 17.71 157 [19] velocity gradient can be written...ARL-RP-0562 ● JAN 2016 US Army Research Laboratory Modeling and Simulation of Ballistic Penetration of Ceramic-Polymer- Metal ...Penetration of Ceramic-Polymer- Metal Layered Systems by JD Clayton Weapons and Materials Research Directorate, ARL Reprinted from

  20. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures

    PubMed Central

    Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

    2016-01-01

    The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A’B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA’, AB and AB’ stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. PMID:27528196

  1. Linearity optimization of atomic layer deposited ZrO{sub 2} metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers

    SciTech Connect

    Lutzer, B.; Simsek, S.; Zimmermann, C.; Bethge, O.; Bertagnolli, E.; Stoeger-Pollach, M.

    2016-03-28

    In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO{sub 2} insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An improvement of the α-voltage coefficient of capacitance as low as 567 ppm/V{sup 2} is achieved for a single layer of Cr while maintaining a high capacitance density of 10.7 fF/μm{sup 2} and a leakage current of less than 1.2 × 10{sup −8} A/cm{sup 2} at +1 V. The role of the interface is discussed by means of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy showing the formation of Zr stabilized chromia oxide phase with a dielectric constant of 16.

  2. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  3. Engineering discrete stacks of aromatic molecules.

    PubMed

    Klosterman, Jeremy K; Yamauchi, Yoshihiro; Fujita, Makoto

    2009-06-01

    Intrigued by transannular interactions occurring in stacked aromatic molecules, chemists have long endeavored to engineer discrete stacks of specific lengths and orientation. The maturation of self-assembly methodologies has shifted the focus away from utilizing covalent scaffolds to harnessing non-covalent interactions such as ionic interactions, hydrogen bonds, metal-ligand interactions, and aromatic interactions. Aromatic molecules often assemble into ill-defined, infinite aggregates and thus multiple self-assembly techniques must be combined to achieve the desired stack size and conformations. This critical review briefly highlights covalent scaffolds of stack aromatics before focusing on modern self-assembly based strategies for engineering discrete stacks of aromatic molecules (149 references).

  4. Chemical intercalation of zerovalent metals into 2D layered Bi2Se3 nanoribbons.

    PubMed

    Koski, Kristie J; Wessells, Colin D; Reed, Bryan W; Cha, Judy J; Kong, Desheng; Cui, Yi

    2012-08-22

    We have developed a chemical method to intercalate a variety of zerovalent metal atoms into two-dimensional (2D) layered Bi(2)Se(3) chalcogenide nanoribbons. We use a chemical reaction, such as a disproportionation redox reaction, to generate dilute zerovalent metal atoms in a refluxing solution, which intercalate into the layered Bi(2)Se(3) structure. The zerovalent nature of the intercalant allows superstoichiometric intercalation of metal atoms such as Ag, Au, Co, Cu, Fe, In, Ni, and Sn. We foresee the impact of this methodology in establishing novel fundamental physical behaviors and in possible energy applications.

  5. Stacked-and-drawn metamaterials with magnetic resonances in the terahertz range.

    PubMed

    Tuniz, Alessandro; Lwin, Richard; Argyros, Alexander; Fleming, Simon C; Pogson, Elise M; Constable, Evan; Lewis, Roger A; Kuhlmey, Boris T

    2011-08-15

    We present a novel method for producing drawn metamaterials containing slotted metallic cylinder resonators, possessing strong magnetic resonances in the terahertz range. The resulting structures are either spooled to produce a 2-dimensional metamaterial monolayer, or stacked to produce three-dimensional multi-layered metamaterials. We experimentally investigate the effects of the resonator size and number of metamaterial layers on transmittance, observing magnetic resonances between 0.1 and 0.4 THz, in good agreement with simulations. Such fibers promise future applications in mass-produced stacked or woven metamaterials. © 2011 Optical Society of America

  6. Photoresponse of double-stacked graphene to Infrared radiation.

    PubMed

    Gowda, Prarthana; Mohapatra, Dipti R; Misra, Abha

    2015-10-14

    We report the photoresponse of stacked graphene layers towards infrared radiation. Graphene is stacked in two configurations, namely, crossed and parallel layers. Raman analysis demonstrated a strong interaction among the stacked graphene layers. Graphene in the crossed configuration exhibited the presence of both negative and positive conductivities; however, other configurations of graphene exhibited positive conductivity only. The presence of negative photoconductivity is proposed to be due to oxygen or oxygen-related functional group absorbents that are trapped in between two monolayers of graphene and act as scattering centers for free carriers. An interesting trend is reported in differential conductivity when stacked layers are compared with multilayers and parallel-stacked graphene layers.

  7. Photoresponse of double-stacked graphene to Infrared radiation

    NASA Astrophysics Data System (ADS)

    Gowda, Prarthana; Mohapatra, Dipti R.; Misra, Abha

    2015-09-01

    We report the photoresponse of stacked graphene layers towards infrared radiation. Graphene is stacked in two configurations, namely, crossed and parallel layers. Raman analysis demonstrated a strong interaction among the stacked graphene layers. Graphene in the crossed configuration exhibited the presence of both negative and positive conductivities; however, other configurations of graphene exhibited positive conductivity only. The presence of negative photoconductivity is proposed to be due to oxygen or oxygen-related functional group absorbents that are trapped in between two monolayers of graphene and act as scattering centers for free carriers. An interesting trend is reported in differential conductivity when stacked layers are compared with multilayers and parallel-stacked graphene layers.

  8. LOW VELOCITY IMPACT RESPONSE OF A LAMINATED COMPOSITE TUBE WITH A METALLIC BUMPER LAYER

    SciTech Connect

    Ibekwe, S.I.; Li, G.; Pang, S.S.; and Smith, B. H.

    2006-07-01

    A thin metallic sheet was bonded to the outer surface of a laminated composite curved beam as a bumper layer. It was believed that a metallic bumper layer such as an aluminum thin sheet would be able to intercept any lateral impacting force and absorb impact energy through plastic deformation. Since aluminum is comparatively light weight, a thin sheet will not result in a significant increase in structural weight. Results showed that impact damage occurred primarily in the bumper layer, thereby resulting in a much higher residual bending strength compared to the control specimen.

  9. Atomic-Scale Tuning of Layered Binary Metal Oxides for High Temperature Moving Assemblies

    DTIC Science & Technology

    2015-06-01

    AFRL-OSR-VA-TR-2015-0166 Atomic -Scale Tuning of Layered Binary Metal OxideS ASHLIE MARTINI UNIVERSITY OF CALIFORNIA MERCED Final Report 06/01/2015...COVERED (From - To)      01-05-2012 to 30-04-2015 4.  TITLE AND SUBTITLE Atomic -Scale Tuning of Layered Binary Metal Oxides for High Temperature Moving...understand, at an atomic level, the material properties that influence the thermal, mechanical and tribological behavior of intrinsically layered binary

  10. Layer-by-Layer Deposition with Polymers Containing Nitrilotriacetate, A Convenient Route to Fabricate Metal- and Protein-Binding Films.

    PubMed

    Wijeratne, Salinda; Liu, Weijing; Dong, Jinlan; Ning, Wenjing; Ratnayake, Nishanka Dilini; Walker, Kevin D; Bruening, Merlin L

    2016-04-27

    This paper describes a convenient synthesis of nitrilotriacetate (NTA)-containing polymers and subsequent layer-by-layer adsorption of these polymers on flat surfaces and in membrane pores. The resulting films form NTA-metal-ion complexes and capture 2-3 mmol of metal ions per mL of film. Moreover, these coatings bind multilayers of polyhistidine-tagged proteins through association with NTA-metal-ion complexes. Inclusion of acrylic acid repeat units in NTA-containing copolymers promotes swelling to increase protein binding in films on Au-coated wafers. Adsorption of NTA-containing films in porous nylon membranes gives materials that capture ∼46 mg of His-tagged ubiquitin per mL. However, the binding capacity decreases with the protein molecular weight. Due to the high affinity of NTA for metal ions, the modified membranes show modest leaching of Ni(2+) in binding and rinsing buffers. Adsorption of NTA-containing polymers is a simple method to create metal- and protein-binding films and may, with future enhancement of stability, facilitate development of disposable membranes that rapidly purify tagged proteins.

  11. Immobilization of Metal Nanoparticles in Surface Layer of Silica Matrices

    NASA Astrophysics Data System (ADS)

    Katok, Kseniia; Tertykh, Valentin; Yanishpolskii, Victor

    Gold and silver nanoparticles were obtained by in situ reduction with silicon hydride groups grafted to the mesoporous MCM-41 silica surface. Nickel-, cobalt-, and iron-containing silicas were synthesized by chemisorption of appropriate metal acetylacetonates with following reduction in the acetylene atmosphere. Such metal-containing MCM-41 matrices have been applied for preparation of carbon nanostructures at pyrolytic decomposition of acetylene. From transmission electron microscopy (TEM) data a lot of carbon nanotubes were formed, namely tubes with external diameter of 10-35 nm for Ni-, 42-84 nm for Co-, and 14-24 nm for Fecontaining silicas. In the metal absence on the silica surface low yield of nanotubes (up to 2%) was detected.

  12. Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

    NASA Astrophysics Data System (ADS)

    Shoji, Yasushi; Narahara, Kohei; Tanaka, Hideharu; Kita, Takashi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-04-01

    We have investigated the properties of multi-stacked layers of self-organized In0.4Ga0.6As quantum dots (QDs) on GaAs (311)B grown by molecular beam epitaxy. We found that a high degree of in-plane ordering of QDs structure with a six-fold symmetry was maintained though the growth has been performed at a higher growth rate than the conventional conditions. The dependence of photoluminescence characteristics on spacer layer thickness showed an increasing degree of electronic coupling between the stacked QDs for thinner spacer layers. The external quantum efficiency for an InGaAs/GaAs quantum dot solar cell (QDSC) with a thin spacer layer thickness increased in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. Furthermore, a photocurrent production by 2-step photon absorption has been observed at room temperature for the InGaAs/GaAs QDSC with a spacer layer thickness of 15 nm.

  13. Electronic states of monatomic layers of alkali and rare earth metals adsorbed on graphene surfaces

    NASA Astrophysics Data System (ADS)

    Alisultanov, Z. Z.

    2013-02-01

    The electronic states of ordered layers of alkali and rare earth metals adsorbed on graphene surfaces are examined using an Anderson model. The behavior of the density of states of these systems is analyzed. The case of an adsorbed metallic nanolayer with a discrete energy spectrum is discussed. A system whose electronic states can be controlled by an applied electric field is proposed and is of great practical interest. The qualitative difference between the existing theoretical approach to this problem and the present paper is that the former uses a "single adatom" formalism that does not deal with the band structure of the metallic adlayer. A way of describing the electronic states of an adsorbed layer of Gd and other metallic layers which form a fractal structure on a graphene surface is also examined.

  14. Microstructure and composition of annealed Al/Ti-metallization layers.

    PubMed

    Hofmann, M; Gemming, T; Wetzig, K

    2004-06-01

    Al/Ti multilayers with columnar grains were deposited by electron-beam evaporation on piezoelectric LiNbO(3) substrates. After annealing in air and under vacuum conditions dissolution of the Ti interlayer was observed for all samples. The original Ti interlayer dissolved completely and globular Al(3)Ti grains were formed within an Al matrix. All samples had an oxidized adhesive Ti bottom layer and a 10 nm thin Al layer below this adhesive Ti bottom layer, which remains intact after the applied heat treatment. This resistance against dissolution by interdiffusion could be caused by the oxidation. These changes in the microstructure and in the chemical composition were investigated by conventional and analytical TEM.

  15. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N-H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  16. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

    PubMed Central

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F. L.; Chantrell, Roy W.; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  17. Noise and vibration level reduction by covering metal structures with layers of damping materials. [considering viscoelastic insulation layers

    NASA Technical Reports Server (NTRS)

    Rugina, I.; Paven, H. T. O.

    1974-01-01

    One of the most important methods of reducing the noise and vibration level is the damping of the secondary sources, such as metal plates, often used in vehicle structures, by means of covering materials with high internal viscosity. Damping layers are chosen at an optimum thickness corresponding to the frequency and temperature range in which a certain structure works. The structure's response corresponding to various real situations is analyzed by means of a measuring chain including electroacoustical or electromechanical transducers. The experimental results provide the dependence of the loss factor and damping transmission coefficient as a function of the damping layer thickness or of the frequency for various viscoelastic covering materials.

  18. Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

    NASA Astrophysics Data System (ADS)

    Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

    2012-06-01

    To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

  19. Spin tuning of electron-doped metal-phthalocyanine layers.

    PubMed

    Stepanow, Sebastian; Lodi Rizzini, Alberto; Krull, Cornelius; Kavich, Jerald; Cezar, Julio C; Yakhou-Harris, Flora; Sheverdyaeva, Polina M; Moras, Paolo; Carbone, Carlo; Ceballos, Gustavo; Mugarza, Aitor; Gambardella, Pietro

    2014-04-09

    The spin state of organic-based magnets at interfaces is to a great extent determined by the organic environment and the nature of the spin-carrying metal center, which is further subject to modifications by the adsorbate-substrate coupling. Direct chemical doping offers an additional route for tailoring the electronic and magnetic characteristics of molecular magnets. Here we present a systematic investigation of the effects of alkali metal doping on the charge state and crystal field of 3d metal ions in Cu, Ni, Fe, and Mn phthalocyanine (Pc) monolayers adsorbed on Ag. Combined X-ray absorption spectroscopy and ligand field multiplet calculations show that Cu(II), Ni(II), and Fe(II) ions reduce to Cu(I), Ni(I), and Fe(I) upon alkali metal adsorption, whereas Mn maintains its formal oxidation state. The strength of the crystal field at the Ni, Fe, and Mn sites is strongly reduced upon doping. The combined effect of these changes is that the magnetic moment of high- and low-spin ions such as Cu and Ni can be entirely turned off or on, respectively, whereas the magnetic configuration of MnPc can be changed from intermediate (3/2) to high (5/2) spin. In the case of FePc a 10-fold increase of the orbital magnetic moment accompanies charge transfer and a transition to a high-spin state.

  20. Current density and catalyst-coated membrane resistance distribution of hydro-formed metallic bipolar plate fuel cell short stack with 250 cm2 active area

    NASA Astrophysics Data System (ADS)

    Haase, S.; Moser, M.; Hirschfeld, J. A.; Jozwiak, K.

    2016-01-01

    An automotive fuel cell with an active area of 250 cm2 is investigated in a 4-cell short stack with a current and temperature distribution device next to the bipolar plate with 560 current and 140 temperature segments. The electrical conductivities of the bipolar plate and gas diffusion layer assembly are determined ex-situ with this current scan shunt module. The applied fuel cell consists of bipolar plates constructed of 75-μm-thick, welded stainless-steel foils and a graphitic coating. The electrical conductivities of the bipolar plate and gas diffusion layer assembly are determined ex-situ with this module with a 6% deviation in in-plane conductivity. The current density distribution is evaluated up to 2.4 A cm-2. The entire cell's investigated volumetric power density is 4.7 kW l-1, and its gravimetric power density is 4.3 kW kg-1 at an average cell voltage of 0.5 V. The current density distribution is determined without influencing the operating cell. In addition, the current density distribution in the catalyst-coated membrane and its effective resistivity distribution with a finite volume discretisation of Ohm's law are evaluated. The deviation between the current density distributions in the catalyst-coated membrane and the bipolar plate is determined.

  1. Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

    NASA Astrophysics Data System (ADS)

    Bilo, Fabjola; Borgese, Laura; Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina; Pazzaglia, Ugo; Depero, Laura E.

    2015-12-01

    We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co-Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO2. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO2 layer, the lower is the metal migration.

  2. Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

    DOEpatents

    Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

    2016-07-26

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.

  3. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    PubMed

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

  4. Multistep soft chemistry method for valence reduction in transition metal oxides with triangular (CdI2-type) layers.

    PubMed

    Blakely, Colin K; Bruno, Shaun R; Poltavets, Viktor V

    2014-03-14

    Transition metal (M) oxides with MO2 triangular layers demonstrate a variety of physical properties depending on the metal oxidation states. In the known compounds, metal oxidation states are limited to either 3+ or mixed-valent 3+/4+. A multistep soft chemistry synthetic route for novel phases with M(2+/3+)O2 triangular layers is reported.

  5. Metallic stereostructured layer: An approach for broadband polarization state manipulation

    SciTech Connect

    Xiong, Xiang; Hu, Yuan-Sheng; Jiang, Shang-Chi; Hu, Yu-Hui; Fan, Ren-Hao; Ma, Guo-Bin; Shu, Da-Jun; Peng, Ru-Wen; Wang, Mu

    2014-11-17

    In this letter, we report a full-metallic broadband wave plate assembled by standing metallic L-shaped stereostructures (LSSs). We show that with an array of LSSs, high polarization conversion ratio is achieved within a broad frequency band. Moreover, by rotating the orientation of the array of LSSs, the electric components of the reflection beam in two orthogonal directions and their phase difference can be independently tuned. In this way, all the polarization states on the Poincaré sphere can be realized. As examples, the functionalities of a quarter wave plate and a half wave plate are experimentally demonstrated with both reflection spectra and focal-plane-array imaging. Our designing provides a unique approach in realizing the broadband wave plate to manipulate the polarization state of light.

  6. Spin Transport in Single Layer Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Phillips, Michael; Aji, Vivek

    Inversion symmetry breaking and strong spin orbit coupling in two dimensional transition metal dichalcogenides leads to interesting new phenomena such as the valley hall and spin hall effects. The nontrivial Berry curvature of the bands yields transverse spin currents in applied field. In this talk we characterize the spin transport in hole-doped systems. Due to the large spin-splitting, time-reversal invariance, and the large separation of hole pockets in momentum space, spin flip scattering involves inter-valley processes with large momentum. As such, one expects large spin life times and a large spin hall angle. We analyze the robustness of the phenomena to various scattering processes and explore the viability of transition metal dichalcogenides for spintronic applications. We acknowledge the support of the NSF via Grant NSF DMR-1506707.

  7. Negative Linear Compressibility Due to Layer Sliding in a Layered Metal-Organic Framework.

    PubMed

    Zeng, Qingxin; Wang, Kai; Qiao, Yuancun; Li, Xiaodong; Zou, Bo

    2017-04-06

    Negative linear compressibility (NLC) is a rare and counterintuitive phenomenon because materials with this property would expand along one specific direction when uniformly compressed. NLC materials have a broad range of potential applications in designing pressure sensors, artificial muscles, and so on. Designing and searching for systems with NLC is desired and crucial for material and compression science. Herein, with the help of high-pressure X-ray diffraction measurements and density functional theory calculations, we find that the 2D layered Co(SCN)2(pyrazine)2 exhibits NLC with a new mechanism: layer sliding. When compressed, the ab planes slide along the a axis, leading to the decrease of lattice parameter β, which results in the NLC effect along principal axis X3 (≈ -0.84a - 0.55c). The layer sliding mechanism opens exciting opportunities for seeking, designing, and synthesizing new classes of materials with anomalous mechanical properties in monoclinic layered or other related systems.

  8. Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings

    NASA Astrophysics Data System (ADS)

    Tan, Qing-Hai; Zhang, Xin; Luo, Xiang-Dong; Zhang, Jun; Tan, Ping-Heng

    2017-03-01

    Two-dimensional transition metal dichalcogenides (TMDs) have attracted extensive attention due to their many novel properties. The atoms within each layer in two-dimensional TMDs are joined together by covalent bonds, while van der Waals interactions combine the layers together. This makes its lattice dynamics layer-number dependent. The evolutions of ultralow frequency (< 50 cm‑1) modes, such as shear and layer-breathing modes have been well-established. Here, we review the layer-number dependent high-frequency (> 50 cm‑1) vibration modes in few-layer TMDs and demonstrate how the interlayer coupling leads to the splitting of high-frequency vibration modes, known as Davydov splitting. Such Davydov splitting can be well described by a van der Waals model, which directly links the splitting with the interlayer coupling. Our review expands the understanding on the effect of interlayer coupling on the high-frequency vibration modes in TMDs and other two-dimensional materials. Project supported by the National Basic Research Program of China (No. 2016YFA0301200), the National Natural Science Foundation of China (Nos. 11225421, 11474277, 11434010, 61474067, 11604326, 11574305 and 51527901), and the National Young 1000 Talent Plan of China.

  9. The enhancement of neutral metal Na layer above thunderstorms

    NASA Astrophysics Data System (ADS)

    Yu, Bingkun; Xue, Xianghui; Lu, Gaopeng; Kuo, Chengling; Dou, Xiankang; Gao, Qi; Qie, Xiushu; Wu, Jianfei; Tang, Yihuan

    2017-04-01

    Na (sodium) exists as layers of atoms in the mesosphere/lower thermosphere (MLT) at altitudes between 80 and 105 km. It has lower ionization potential of 5.139 eV than atmospheric species, such as O2 (12.06 eV). Tropospheric thunderstorms affect the lower ionosphere and the ionospheric sporadic E (Es) at 100 km can also be influenced by lightning. The mechanism is expected to be associated with transient luminous events (TLE) as red sprites and gigantic jets at upper atmosphere. However, measurements of ionospheric electric fields of 20mV·m-1 above thunderstorms are less than estimated value (>48 0mV·m-1) to excite ionization in the lower ionosphere. We found an enhancement of Na layer above thunderstorms. The increase of Na density in the statistical result can be as much as 500 cm-3 and it will have an impact on ionospheric chemistry and modify the conductivity properties of the MLT region. The ionospheric observations made with two digisondes near the Na lidar, the thunderstorm model, ionosphere model, and Na chemistry model are all used to discuss the possible mechanisms responsible for the enhancement of Na layer after thunderstorms.

  10. Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

    NASA Astrophysics Data System (ADS)

    Sethi, P.; Krishnia, S.; Li, S. H.; Lew, W. S.

    2017-03-01

    We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

  11. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer.

    PubMed

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-04

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  12. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    PubMed Central

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-01-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM. PMID:28374805

  13. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    NASA Astrophysics Data System (ADS)

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  14. Layer-by-layer self-assembled conductor network composites in ionic polymer metal composite actuators with high strain response

    NASA Astrophysics Data System (ADS)

    Liu, Sheng; Montazami, Reza; Liu, Yang; Jain, Vaibhav; Lin, Minren; Heflin, James R.; Zhang, Q. M.

    2009-07-01

    We investigate the electromechanical response of conductor network composite (CNC) fabricated by the layer-by-layer (LbL) self-assembly method. The process makes it possible for CNCs to be fabricated at submicron thickness with high precision and quality. This CNCs exhibits high strain ˜6.8% under 4 V, whereas the RuO2/Nafion CNCs exhibit strain ˜3.3%. The high strain and submicron thickness of the LbL layers in an ionic polymer metal composite (IPMC) yield large and fast actuation. The response time of a 26 μm thick IPMC with 0.4 μm thick LbL CNCs to step voltage of 4 V is 0.18 s.

  15. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    SciTech Connect

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min E-mail: limin.liu@csrc.ac.cn; Lau, Woon-Ming; Peng, Ping E-mail: limin.liu@csrc.ac.cn

    2014-02-07

    The family of bulk metal phosphorus trichalcogenides (APX{sub 3}, A = M{sup II}, M{sub 0.5}{sup I}M{sub 0.5}{sup III}; X = S, Se; M{sup I}, M{sup II}, and M{sup III} represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX{sub 3} should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe{sub 3}, CdPSe{sub 3}, Ag{sub 0.5}Sc{sub 0.5}PSe{sub 3}, and Ag{sub 0.5}In{sub 0.5}PX{sub 3} (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag{sub 0.5}Sc{sub 0.5}PSe{sub 3} is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting.

  16. A Strategy to Create Spin-Split Metallic Bands on Silicon Using a Dense Alloy Layer

    PubMed Central

    Gruznev, Dimitry V.; Bondarenko, Leonid V.; Matetskiy, Andrey V.; Yakovlev, Alexey A.; Tupchaya, Alexandra Y.; Eremeev, Sergey V.; Chulkov, Evgeniy V.; Chou, Jyh-Pin; Wei, Ching-Ming; Lai, Ming-Yu; Wang, Yuh-Lin; Zotov, Andrey V.; Saranin, Alexander A.

    2014-01-01

    To exploit Rashba effect in a 2D electron gas on silicon surface for spin transport, it is necessary to have surface reconstruction with spin-split metallic surface-state bands. However, metals with strong spin-orbit coupling (e.g., Bi, Tl, Sb, Pt) induce reconstructions on silicon with almost exclusively spin-split insulating bands. We propose a strategy to create spin-split metallic bands using a dense 2D alloy layer containing a metal with strong spin-orbit coupling and another metal to modify the surface reconstruction. Here we report two examples, i.e., alloying reconstruction with Na and Tl/Si(111)1 × 1 reconstruction with Pb. The strategy provides a new paradigm for creating metallic surface state bands with various spin textures on silicon and therefore enhances the possibility to integrate fascinating and promising capabilities of spintronics with current semiconductor technology. PMID:24752038

  17. Broadband perfect absorber based on one ultrathin layer of refractory metal.

    PubMed

    Deng, Huixu; Li, Zhigang; Stan, Liliana; Rosenmann, Daniel; Czaplewski, David; Gao, Jie; Yang, Xiaodong

    2015-06-01

    Broadband perfect absorber based on one ultrathin layer of the refractory metal chromium without structure patterning is proposed and demonstrated. The ideal permittivity of the metal layer for achieving broadband perfect absorption is derived based on the impedance transformation method. Since the permittivity of the refractory metal chromium matches this ideal permittivity well in the visible and near-infrared range, a silica-chromium-silica three-layer absorber is fabricated to demonstrate the broadband perfect absorption. The experimental results under normal incidence show that the absorption is above 90% over the wavelength range of 0.4-1.4 μm, and the measurements under angled incidence within 400-800 nm prove that the absorber is angle-insensitive and polarization-independent.

  18. Electrical contact characteristics of mechanically mated Y Ba Cu O bulks with deposited metal layer

    NASA Astrophysics Data System (ADS)

    Imaizumi, with deposited metal layer T.; Sawa, K.; Tomita, M.; Murakami, M.; Sakai, N.; Hirabayashi, I.

    2005-10-01

    We have measured contact resistances between two bulk YBCO superconductor blocks with the application to a persistent current switch (PCS) in mind. In order to reduce a contact resistance, we deposited indium and silver on the sample surfaces. The resistance was reduced by increasing the thickness of the deposited metal layers, but it saturated when the thickness reached a certain level. The saturation thickness was much smaller in indium than silver. Such a difference is understandable by considering the hardness of these two metals. The resistance was also reduced by increasing the mechanical load. Overloading however caused the coupling of metal layers, resulting in the peeling off of the deposited layers when the switch was opened.

  19. Broadband perfect absorber based on one ultrathin layer of refractory metal

    SciTech Connect

    Deng, Huixu; Li, Zhigang; Stan, Liliana; Rosenmann, Daniel; Czaplewski, David; Gao, Jie; Yang, Xiaodong

    2015-06-01

    Broadband perfect absorber based on one ultrathin layer of the refractory metal chromium without structure pat- terning is proposed and demonstrated. The ideal permittivity of the metal layer for achieving broadband perfect absorption is derived based on the impedance transformation method. Since the permittivity of the refractory metal chromium matches this ideal permittivity well in the visible and near-infrared range, a silica-chromium-silica three-layer absorber is fabricated to demonstrate the broadband perfect absorption. The experimental results under normal incidence show that the absorption is above 90% over the wavelength range of 0.4–1.4 μm, and the measurements under angled incidence within 400–800 nm prove that the absorber is angle-insensitive and polarization- independent.

  20. Excitation transfer in stacked quantum dot chains

    NASA Astrophysics Data System (ADS)

    Kanjanachuchai, Songphol; Xu, Ming; Jaffré, Alexandre; Jittrong, Apichart; Chokamnuai, Thitipong; Panyakeow, Somsak; Boutchich, Mohamed

    2015-05-01

    Stacked InAs quantum dot chains (QDCs) on InGaAs/GaAs cross-hatch pattern (CHP) templates yield a rich emission spectrum with an unusual carrier transfer characteristic compared to conventional quantum dot (QD) stacks. The photoluminescent spectra of the controlled, single QDC layer comprise multiple peaks from the orthogonal QDCs, the free-standing QDs, the CHP, the wetting layers and the GaAs substrate. When the QDC layers are stacked, employing a 10 nm GaAs spacer between adjacent QDC layers, the PL spectra are dominated by the top-most stack, indicating that the QDC layers are nominally uncoupled. Under high excitation power densities when the high-energy peaks of the top stack are saturated, however, low-energy PL peaks from the bottom stacks emerge as a result of carrier transfers across the GaAs spacers. These unique PL signatures contrast with the state-filling effects in conventional, coupled QD stacks and serve as a means to quickly assess the presence of electronic coupling in stacks of dissimilar-sized nanostructures.

  1. Fresnel coefficients and Fabry-Perot formula for spatially dispersive metallic layers

    NASA Astrophysics Data System (ADS)

    Pitelet, Armel; Mallet, Émilien; Centeno, Emmanuel; Moreau, Antoine

    2017-07-01

    The repulsion between free electrons inside a metal makes its optical response spatially dispersive, so that it is not described by Drude's model but by a hydrodynamic model. We give here fully analytic results for a metallic slab in this framework, thanks to a two-mode cavity formalism leading to a Fabry-Perot formula, and show that a simplification can be made that preserves the accuracy of the results while allowing much simpler analytic expressions. For metallic layers thicker than 2.7 nm modified Fresnel coefficients can actually be used to accurately predict the response of any multilayer with spatially dispersive metals (for reflection, transmission, or the guided modes). Finally, this explains why adding a small dielectric layer [Y. Luo et al., Phys. Rev. Lett. 111, 093901 (2013), 10.1103/PhysRevLett.111.093901] allows one to reproduce the effects of nonlocality in many cases, and especially for multilayers.

  2. The enhancement of neutral metal Na layer above thunderstorms

    NASA Astrophysics Data System (ADS)

    Yu, B.; Xue, X.; Lu, G.; Dou, X.; Gao, Q.; Qie, X.; Wu, J.; Tang, Y.; Holzworth, R.

    2016-12-01

    Na (sodium) exists as layers of atoms in the mesosphere/lower thermosphere (MLT) at altitudes between 80 and 105 km. It has lower ionization potential of 5.139 eV than atmospheric species, such as O2 (12.06 eV). Tropospheric thunderstorms affect the lower ionosphere and the ionospheric sporadic E (Es) at 100 km can also be influenced by lightning. The mechanism is expected to be associated with transient luminous events (TLE) as red sprites and gigantic jets at upper atmosphere. However, measurements of ionospheric electric fields of 20mV·m-1 above thunderstorms are less than estimated value (>48 0mV·m-1) to excite ionization in the lower ionosphere. We found an enhancement of Na layer above thunderstorms. The increase of Na density in the statistical result can be as much as 500 cm-3 and it will have an impact on ionospheric chemistry and modify the conductivity properties of the MLT region.

  3. Exploiting Semiconductor to Metallic Phase Transformation in Layered Transition Metal Dichalcogenides for Ohmic contact Contacts

    NASA Astrophysics Data System (ADS)

    Kappera, Rajesh; Voiry, Damien; Jen, Wesley; Yalcin, Sibel Ebru; Gupta, Gautam; Mohite, Aditya; Chhowalla, Manish; Material Science department, Rutgers University, Piscataway, NJ, 08854, USA Team; CenterIntegrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, US Team

    2014-03-01

    Achieving ohmic contacts to transition metal dichalcogenides (MoS2, WS2, WSe2 and MoSe2) has been a challenge for researchers owing to the formation of a large Schottky barrier between metal and semiconductor. This results in low on-currents, mobilities and sub-threshold swings in the devices made with these materials. Here we report a universal strategy using chemical approach to reversibly transform the semiconducting phase (2H) to metallic phase (1T). Taking advantage of the metallic phase, we have fabricated hybrid transistors, which have 1T phase contacts and semiconducting 2H phase of the material as the channel. The metallic phase dramatically reduces the Schottky barrier between the metal and the semiconductor thereby mitigating the high contact resistance issues. This strategy should be applicable to several other applications such as catalysis, supercapacitors and batteries. Detailed synthesis, structural, electrical and optical characterization will be described.

  4. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells

    PubMed Central

    Trost, S.; Becker, T.; Zilberberg, K.; Behrendt, A.; Polywka, A.; Heiderhoff, R.; Görrn, P.; Riedl, T.

    2015-01-01

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1–20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated. PMID:25592174

  5. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

    PubMed

    Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

    2015-01-16

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

  6. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells

    NASA Astrophysics Data System (ADS)

    Trost, S.; Becker, T.; Zilberberg, K.; Behrendt, A.; Polywka, A.; Heiderhoff, R.; Görrn, P.; Riedl, T.

    2015-01-01

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

  7. Simple metal under tensile stress: layer-dependent herringbone reconstruction of thin potassium films on graphite

    PubMed Central

    Yin, Feng; Kulju, Sampo; Koskinen, Pekka; Akola, Jaakko; Palmer, Richard E.

    2015-01-01

    While understanding the properties of materials under stress is fundamentally important, designing experiments to probe the effects of large tensile stress is difficult. Here tensile stress is created in thin films of potassium (up to 4 atomic layers) by epitaxial growth on a rigid support, graphite. We find that this “simple” metal shows a long-range, periodic “herringbone” reconstruction, observed in 2- and 3- (but not 1- and 4-) layer films by low-temperature scanning tunneling microscopy (STM). Such a pattern has never been observed in a simple metal. Density functional theory (DFT)simulations indicate that the reconstruction consists of self-aligned stripes of enhanced atom density formed to relieve the tensile strain. At the same time marked layer-dependent charging effects lead to substantial variation in the apparent STM layer heights. PMID:25959681

  8. Stress Analysis of a Three-Layer Metal Composite System of Bearing Assemblies During Grinding

    NASA Astrophysics Data System (ADS)

    Pashnyov, V. A.; Pimenov, D. Yu.

    2015-03-01

    A mathematical model of the stress state of a three-layer metal composite system caused by cutting forces during grinding the working layer of the system is elaborated. The implementation of the model by using the finite-element method made it possible to assess the effect of structure of the system, the deformation properties of layer materials, and grinding conditions on the distribution and level of normal and tangential stresses in layers, which determine the load-carrying capacity of the system. The results of an analysis of stress fields can serve as a basis for determining the grinding conditions ensuring retention of the load-carrying capacity of the metal composite system.

  9. Melt layer behavior of metal targets irradiatead by powerful plasma streams

    NASA Astrophysics Data System (ADS)

    Bandura, A. N.; Byrka, O. V.; Chebotarev, V. V.; Garkusha, I. E.; Makhlaj, V. A.; Solyakov, D. G.; Tereshin, V. I.; Wuerz, H.

    2002-12-01

    In this paper melt layer erosion of metal targets under pulsed high-heat loads is studied. Experiments with steel, copper, aluminum and titanium samples were carried out in two plasma accelerator devices with different time durations of the heat load. The surfaces of the resolidified melt layers show a considerable roughness with microcraters and ridge like relief on the surface. For each material the mass loss was determined. Melt layer erosion by melt motion was clearly identified. However it is masked by boiling, bubble expansion and bubble collapse and by formation of a Kelvin-Helmholtz instability. The experimental results can be used for validation of numerical codes which model melt layer erosion of metallic armour materials in off-normal events, in tokamaks.

  10. Maximal light-energy transfer through a dielectric/metal-layered electrode on a photoactive device.

    PubMed

    Kim, Kyoung-Ho; Park, Q-Han

    2014-01-27

    We report the fabrication of an optimized low reflective dielectric/metal-layered electrode that provides significant electrical conductivity and light transparency in the near-infrared wavelength regime. By making the metal film thickness thick enough and choosing a proper dielectric layer with a certain thickness, we show that our suggested electrode significantly reduces the light reflection while preserving high electrical conductivity. We demonstrate our optimized electrodes present a highly conductive surface with a sheet resistance of 5.2 Ω/sq and a high light transmittance of near 85% in the near-infrared regime. We also apply our optimized electrode to thin-film organic photovoltaic devices and show the electrode helps in absorbing light energy inside an active layer. We believe that this simple but powerful layered electrode will pave the way for designing transparent electrodes on photoactive devices.

  11. Adhesion of oxide layer to metal-doped aluminum hydride surface: Density functional calculations

    NASA Astrophysics Data System (ADS)

    Takezawa, Tomoki; Itoi, Junichi; Kannan, Takashi

    2017-07-01

    The density functional theory (DFT) calculations were carried out to evaluate the adhesion energy of the oxide layer to the metal-doped surface of hydrogen storage material, aluminum hydride (alane, AlH3). The total energy calculations using slab model revealed that the surface doping of some metals to aluminum hydride weakens the adhesion strength of the oxide layer. The influence of titanium, iron, cobalt, and zirconium doping on adhesion strength were evaluated. Except for iron doping, the adhesion strength becomes weak by the doping.

  12. Co-based alloys design based on first-principles calculations: Influence of transition metal and rare-earth alloying element on stacking fault energy

    NASA Astrophysics Data System (ADS)

    Achmad, Tria Laksana; Fu, Wenxiang; Chen, Hao; Zhang, Chi; Yang, Zhi-Gang

    2017-01-01

    The main idea of alloy design is to reduce costs and time required by the traditional (trial and error) method, then finding a new way to develop the efficiency of the alloy design is necessary. In this study, we proposed a new approach to the design of Co-based alloys. It is based on the concept that lowering the ratio of stable and unstable stacking fault energy (SFE) could bring a significant increase in the tendency of partial dislocation accumulation and FCC to HCP phase transformation then enhance mechanical properties. Through the advance development of the computing techniques, first-principles density-functional-theory (DFT) calculations are capable of providing highly accurate structural modeling at the atomic scale without any experimental data. The first-principles calculated results show that the addition of some transition metal (Cr, Mo, W, Re, Os, Ir) and rare-earth (Sc, Y, La, Sm) alloying elements would decrease both stable and unstable SFE of pure Co. The dominant deformation mechanism of binary Co-4.5 at.% X (X = alloying element) is extended partial dislocation. Our study reveals Re, W, Mo and La as the most promising alloying additions for the Co-based alloys design with superior performances. Furthermore, the underlying mechanisms for the SFE reduction can be explained regarding the electronic structure.

  13. FTIR spectroscopy structural analysis of the interaction between Lactobacillus kefir S-layers and metal ions

    NASA Astrophysics Data System (ADS)

    Gerbino, E.; Mobili, P.; Tymczyszyn, E.; Fausto, R.; Gómez-Zavaglia, A.

    2011-02-01

    FTIR spectroscopy was used to structurally characterize the interaction of S-layer proteins extracted from two strains of Lactobacillus kefir (the aggregating CIDCA 8348 and the non-aggregating JCM 5818) with metal ions (Cd +2, Zn +2, Pb +2 and Ni +2). The infrared spectra indicate that the metal/protein interaction occurs mainly through the carboxylate groups of the side chains of Asp and Glut residues, with some contribution of the NH groups belonging to the peptide backbone. The frequency separation between the νCOO - anti-symmetric and symmetric stretching vibrations in the spectra of the S-layers in presence of the metal ions was found to be ca. 190 cm -1 for S-layer CIDCA 8348 and ca. 170 cm -1 for JCM 5818, denoting an unidentate coordination in both cases. Changes in the secondary structures of the S-layers induced by the interaction with the metal ions were also noticed: a general trend to increase the amount of β-sheet structures and to reduce the amount of α-helices was observed. These changes allow the proteins to adjust their structure to the presence of the metal ions at minimum energy expense, and accordingly, these adjustments were found to be more important for the bigger ions.

  14. Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

    PubMed

    Yan, Kai; Lee, Hyun-Wook; Gao, Teng; Zheng, Guangyuan; Yao, Hongbin; Wang, Haotian; Lu, Zhenda; Zhou, Yu; Liang, Zheng; Liu, Zhongfan; Chu, Steven; Cui, Yi

    2014-10-08

    Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions were able to penetrate through the point and line defects of the 2D layers during the electrochemical deposition, leading to sandwiched lithium metal between ultrathin 2D layers and Cu. The 2D layers afford an excellent interfacial protection of Li metal due to their remarkable chemical stability as well as mechanical strength and flexibility, resulting from the strong intralayer bonds and ultrathin thickness. Smooth Li metal deposition without dendritic and mossy Li formation was realized. We showed stable cycling over 50 cycles with Coulombic efficiency ∼97% in organic carbonate electrolyte with current density and areal capacity up to the practical value of 2.0 mA/cm(2)and 5.0 mAh/cm(2), respectively, which is a significant improvement over the unprotected electrodes in the same electrolyte.

  15. Process for preparation of a seed layer for selective metal deposition

    DOEpatents

    Bernhardt, Anthony F.

    1992-01-01

    Disclosed is a process for selective metal deposition comprising of the steps of: a. formation of an initial surface on a substrate, said initial surface being comprised of at least two layers of which the uppermost is inert, b. exposing the surface to a source of heat in pre-determined places wherein surface activation is desired, and c. deposition of metal on activated portions of said surface.

  16. Synthesis and stabilization of supported metal catalysts by atomic layer deposition.

    PubMed

    Lu, Junling; Elam, Jeffrey W; Stair, Peter C

    2013-08-20

    Supported metal nanoparticles are among the most important catalysts for many practical reactions, including petroleum refining, automobile exhaust treatment, and Fischer-Tropsch synthesis. The catalytic performance strongly depends on the size, composition, and structure of the metal nanoparticles, as well as the underlying support. Scientists have used conventional synthesis methods including impregnation, ion exchange, and deposition-precipitation to control and tune these factors, to establish structure-performance relationships, and to develop better catalysts. Meanwhile, chemists have improved the stability of metal nanoparticles against sintering by the application of protective layers, such as polymers and oxides that encapsulate the metal particle. This often leads to decreased catalytic activity due to a lack of precise control over the thickness of the protective layer. A promising method of catalyst synthesis is atomic layer deposition (ALD). ALD is a variation on chemical vapor deposition in which metals, oxides, and other materials are deposited on surfaces by a sequence of self-limiting reactions. The self-limiting character of these reactions makes it possible to achieve uniform deposits on high-surface-area porous solids. Therefore, design and synthesis of advanced catalysts on the nanoscale becomes possible through precise control over the structure and composition of the underlying support, the catalytic active sites, and the protective layer. In this Account, we describe our advances in the synthesis and stabilization of supported metal catalysts by ALD. After a short introduction to the technique of ALD, we show several strategies for metal catalyst synthesis by ALD that take advantage of its self-limiting feature. Monometallic and bimetallic catalysts with precise control over the metal particle size, composition, and structure were achieved by combining ALD sequences, surface treatments, and deposition temperature control. Next, we describe

  17. Theory of strain in single-layer transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Rostami, Habib; Roldán, Rafael; Cappelluti, Emmanuele; Asgari, Reza; Guinea, Francisco

    2015-11-01

    Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone (BZ). From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials.

  18. Transport Properties of the Layered Transition Metal Oxypnictide Sr2ScMPO3 with MP layers (M =Mn, Ni and Co0.5Fe0.5)

    NASA Astrophysics Data System (ADS)

    Okada, S.; Kamihara, Y.; Ohkubo, N.; Ban, S.; Matoba, M.

    2014-12-01

    Polycrystalline samples of novel oxypnictides, Sr2ScMPO3, with MP layer (M = Mn, Ni and Co0.5Fe0.5) were synthesized, and their resistivities and Seebeck coefficients were measured. Sr2ScMPO3 crystallizes in a stacked, layered structure comprised of a ThCr2Si2- type MP layer alternating with a K2NiF4-type Sr2ScO3 layer. Sr2ScMnPO3 is an insulator at room temperature. The resistivities (ρ) of Sr2ScNiPO3 and Sr2ScCo0.5Fe0.5PO3 decrease with decreasing temperature like a metal. The Seebeck coefficients (S) of these materials are negative at room temperature. For Sr2ScNiPO3, S initially decreases slightly with decreasing temperature, and increases with decreasing temperature below 50 K. However, for Sr2ScCo0.5Fe0.5PO3, S increases with decreasing temperature, and attains to a positive value below 270 K.

  19. Corrosion protected, multi-layer fuel cell interface

    DOEpatents

    Feigenbaum, Haim; Pudick, Sheldon; Wang, Chiu L.

    1986-01-01

    An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. The multi-layer configuration for the interface comprises a non-cupreous metal-coated metallic element to which is film-bonded a conductive layer by hot pressing a resin therebetween. The multi-layer arrangement provides bridging electrical contact.

  20. Lithium metal protected by atomic layer deposition metal oxide for high performance anodes

    DOE PAGES

    Chen, Lin; Connell, Justin G.; Nie, Anmin; ...

    2017-05-26

    We present that lithium metal is a highly desirable anode material for lithium batteries due to its extremely high theoretical capacity (3860 mA h g-1), low potential (-3.04 V versus standard hydrogen electrode), and low density (0.534 g cm-3). However, dendrite growth during cycling and low coulombic efficiency, resulting in safety hazards and fast battery fading, are huge barriers to commercialization. Herein, we used atomic layer deposition (ALD) to prepare conformal, ultrathin aluminum oxide coatings on lithium. We investigated the growth mechanism during Al2O3 ALD on lithium by in situ quartz crystal microbalance and found larger growth than expected duringmore » the initial cycles. We also discovered that the ALD Al2O3 enhances the wettability of the Li surface towards both carbonate and ether electrolytes, leading to uniform and dense SEI formation and reduced electrolyte consumption during battery operation. Scanning electron microscopy verified that the bare Li surfaces become rough and dendritic after electrochemical cycling, whereas the ALD Al2O3 coated Li surfaces remain smooth and uniform. Analysis of the Li surfaces after cycling using X-ray photoelectron spectroscopy and in situ transmission electron microscopy revealed that the ALD Al2O3 coating remains intact during electrochemical cycling, and that Li ions diffuse through the coating and deposit on the underlying Li. Coin cell testing demonstrated more than two times longer cycling life for the ALD Al2O3 protected Li, and a coulombic efficiency as high as ~98% at a practical current rate of 1 mA cm-2. More significantly, when the electrolyte volume was reduced from 20 to 5 μL, the stabilizing effect of the ALD coating became even more pronounced and the cycling life was around four times longer. Finally, these results indicate that ALD Al2O3 coatings are a promising strategy to stabilize Li anodes for high performance energy storage devices such as Li–S batteries.« less