Achieving the physical limits of the bounded-storage model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandayam, Prabha; Wehner, Stephanie; Centre for Quantum Technologies, National University of Singapore, 2 Science Drive 3, 117543 Singapore

2011-02-15

Secure two-party cryptography is possible if the adversary's quantum storage device suffers imperfections. For example, security can be achieved if the adversary can store strictly less then half of the qubits transmitted during the protocol. This special case is known as the bounded-storage model, and it has long been an open question whether security can still be achieved if the adversary's storage were any larger. Here, we answer this question positively and demonstrate a two-party protocol which is secure as long as the adversary cannot store even a small fraction of the transmitted pulses. We also show that security canmore » be extended to a larger class of noisy quantum memories.« less

David Adler Lectureship Award in the Field of Materials Physics: Racetrack Memory - a high-performance, storage class memory using magnetic domain-walls manipulated by current

NASA Astrophysics Data System (ADS)

Parkin, Stuart

2012-02-01

Racetrack Memory is a novel high-performance, non-volatile storage-class memory in which magnetic domains are used to store information in a ``magnetic racetrack'' [1]. The magnetic racetrack promises a solid state memory with storage capacities and cost rivaling that of magnetic disk drives but with much improved performance and reliability: a ``hard disk on a chip''. The magnetic racetrack is comprised of a magnetic nanowire in which a series of magnetic domain walls are shifted to and fro along the wire using nanosecond-long pulses of spin polarized current [2]. We have demonstrated the underlying physics that makes Racetrack Memory possible [3,4] and all the basic functions - creation, and manipulation of a train of domain walls and their detection. The physics underlying the current induced dynamics of domain walls will also be discussed. In particular, we show that the domain walls respond as if they have mass, leading to significant inertial driven motion of the domain walls over long times after the current pulses are switched off [3]. We also demonstrate that in perpendicularly magnetized nanowires there are two independent current driving mechanisms: one derived from bulk spin-dependent scattering that drives the domain walls in the direction of electron flow, and a second interfacial mechanism that can drive the domain walls either along or against the electron flow, depending on subtle changes in the nanowire structure. Finally, we demonstrate thermally induced spin currents are large enough that they can be used to manipulate domain walls. [4pt] [1] S.S.P. Parkin, US Patent 6,834,005 (2004); S.S.P. Parkin et al., Science 320, 190 (2008); S.S.P. Parkin, Scientific American (June 2009). [0pt] [2] M. Hayashi, L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 320, 209 (2008). [0pt] [3] L. Thomas, R. Moriya, C. Rettner and S.S.P. Parkin, Science 330, 1810 (2010). [0pt] [4] X. Jiang et al. Nat. Comm. 1:25 (2010) and Nano Lett. 11, 96 (2011).

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

NASA Technical Reports Server (NTRS)

Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Recall of patterns using binary and gray-scale autoassociative morphological memories

NASA Astrophysics Data System (ADS)

Sussner, Peter

2005-08-01

Morphological associative memories (MAM's) belong to a class of artificial neural networks that perform the operations erosion or dilation of mathematical morphology at each node. Therefore we speak of morphological neural networks. Alternatively, the total input effect on a morphological neuron can be expressed in terms of lattice induced matrix operations in the mathematical theory of minimax algebra. Neural models of associative memories are usually concerned with the storage and the retrieval of binary or bipolar patterns. Thus far, the emphasis in research on morphological associative memory systems has been on binary models, although a number of notable features of autoassociative morphological memories (AMM's) such as optimal absolute storage capacity and one-step convergence have been shown to hold in the general, gray-scale setting. In previous papers, we gained valuable insight into the storage and recall phases of AMM's by analyzing their fixed points and basins of attraction. We have shown in particular that the fixed points of binary AMM's correspond to the lattice polynomials in the original patterns. This paper extends these results in the following ways. In the first place, we provide an exact characterization of the fixed points of gray-scale AMM's in terms of combinations of the original patterns. Secondly, we present an exact expression for the fixed point attractor that represents the output of either a binary or a gray-scale AMM upon presentation of a certain input. The results of this paper are confirmed in several experiments using binary patterns and gray-scale images.

Stability and Hopf bifurcation in a simplified BAM neural network with two time delays.

PubMed

Cao, Jinde; Xiao, Min

2007-03-01

Various local periodic solutions may represent different classes of storage patterns or memory patterns, and arise from the different equilibrium points of neural networks (NNs) by applying Hopf bifurcation technique. In this paper, a bidirectional associative memory NN with four neurons and multiple delays is considered. By applying the normal form theory and the center manifold theorem, analysis of its linear stability and Hopf bifurcation is performed. An algorithm is worked out for determining the direction and stability of the bifurcated periodic solutions. Numerical simulation results supporting the theoretical analysis are also given.

System and method for programmable bank selection for banked memory subsystems

DOEpatents

Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Hoenicke, Dirk; Ohmacht, Martin; Salapura, Valentina; Sugavanam, Krishnan

2010-09-07

A programmable memory system and method for enabling one or more processor devices access to shared memory in a computing environment, the shared memory including one or more memory storage structures having addressable locations for storing data. The system comprises: one or more first logic devices associated with a respective one or more processor devices, each first logic device for receiving physical memory address signals and programmable for generating a respective memory storage structure select signal upon receipt of pre-determined address bit values at selected physical memory address bit locations; and, a second logic device responsive to each of the respective select signal for generating an address signal used for selecting a memory storage structure for processor access. The system thus enables each processor device of a computing environment memory storage access distributed across the one or more memory storage structures.

Flash drive memory apparatus and method

NASA Technical Reports Server (NTRS)

Hinchey, Michael G. (Inventor)

2010-01-01

A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass storage controller, and at least one other interface for a memory device, other than a USB interface, the at least one other interface being connected to the USB mass storage controller.

Nonmuscle myosin IIB as a therapeutic target for the prevention of relapse to methamphetamine use

PubMed Central

Young, Erica J.; Blouin, Ashley M.; Briggs, Sherri B.; Sillivan, Stephanie E.; Lin, Li; Cameron, Michael D.; Rumbaugh, Gavin; Miller, Courtney A.

2015-01-01

Memories associated with drug use increase vulnerability to relapse in substance use disorder (SUD) and there are no pharmacotherapies for the prevention of relapse. Previously, we reported a promising finding that storage of memories associated with methamphetamine (METH), but not memories for fear or food reward, is vulnerable to disruption by actin depolymerization in the basolateral amygdala complex (BLC). However, actin is not a viable therapeutic target because of its numerous functions throughout the body. Here we report the discovery of a viable therapeutic target, nonmuscle myosin II (NMIIB), a molecular motor that supports memory by directly driving synaptic actin polymerization. A single intra-BLC treatment with Blebbistatin, a small molecule inhibitor of class II myosin isoforms, including NMIIB, produced a long-lasting disruption of context-induced drug seeking (at least 30 days). Further, post-consolidation genetic knockdown of Myh10, the heavy chain of the most highly expressed NMII in the BLC, was sufficient to produce METH-associated memory loss. Blebbistatin was found to be highly brain penetrant. A single systemic injection of the compound selectively disrupted the storage of METH-associated memory and reversed the accompanying increase in BLC spine density. This effect was specific to METH-associated memory, as it had no effect on an auditory fear memory. The effect was also independent of retrieval, as METH-associated memory was disrupted twenty-four hours after a single systemic injection of Blebbistatin delivered in the home cage. Together, these results argue for the further development of small molecule inhibitors of nonmuscle myosin II as potential therapeutics for the prevention of SUD relapse triggered by drug associations. PMID:26239291

Impact of Recent Hardware and Software Trends on High Performance Transaction Processing and Analytics

NASA Astrophysics Data System (ADS)

Mohan, C.

In this paper, I survey briefly some of the recent and emerging trends in hardware and software features which impact high performance transaction processing and data analytics applications. These features include multicore processor chips, ultra large main memories, flash storage, storage class memories, database appliances, field programmable gate arrays, transactional memory, key-value stores, and cloud computing. While some applications, e.g., Web 2.0 ones, were initially built without traditional transaction processing functionality in mind, slowly system architects and designers are beginning to address such previously ignored issues. The availability, analytics and response time requirements of these applications were initially given more importance than ACID transaction semantics and resource consumption characteristics. A project at IBM Almaden is studying the implications of phase change memory on transaction processing, in the context of a key-value store. Bitemporal data management has also become an important requirement, especially for financial applications. Power consumption and heat dissipation properties are also major considerations in the emergence of modern software and hardware architectural features. Considerations relating to ease of configuration, installation, maintenance and monitoring, and improvement of total cost of ownership have resulted in database appliances becoming very popular. The MapReduce paradigm is now quite popular for large scale data analysis, in spite of the major inefficiencies associated with it.

Mass storage technology in networks

NASA Astrophysics Data System (ADS)

Ishii, Katsunori; Takeda, Toru; Itao, Kiyoshi; Kaneko, Reizo

1990-08-01

Trends and features of mass storage subsystems in network are surveyed and their key technologies spotlighted. Storage subsystems are becoming increasingly important in new network systems in which communications and data processing are systematically combined. These systems require a new class of high-performance mass-information storage in order to effectively utilize their processing power. The requirements of high transfer rates, high transactional rates and large storage capacities, coupled with high functionality, fault tolerance and flexibility in configuration, are major challenges in storage subsystems. Recent progress in optical disk technology has resulted in improved performance of on-line external memories to optical disk drives, which are competing with mid-range magnetic disks. Optical disks are more effective than magnetic disks in using low-traffic random-access file storing multimedia data that requires large capacity, such as in archive use and in information distribution use by ROM disks. Finally, it demonstrates image coded document file servers for local area network use that employ 130mm rewritable magneto-optical disk subsystems.

Physical principles and current status of emerging non-volatile solid state memories

NASA Astrophysics Data System (ADS)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance. [Figure not available: see fulltext.

Memory engram storage and retrieval.

PubMed

Tonegawa, Susumu; Pignatelli, Michele; Roy, Dheeraj S; Ryan, Tomás J

2015-12-01

A great deal of experimental investment is directed towards questions regarding the mechanisms of memory storage. Such studies have traditionally been restricted to investigation of the anatomical structures, physiological processes, and molecular pathways necessary for the capacity of memory storage, and have avoided the question of how individual memories are stored in the brain. Memory engram technology allows the labeling and subsequent manipulation of components of specific memory engrams in particular brain regions, and it has been established that cell ensembles labeled by this method are both sufficient and necessary for memory recall. Recent research has employed this technology to probe fundamental questions of memory consolidation, differentiating between mechanisms of memory retrieval from the true neurobiology of memory storage. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Sptrace

NASA Technical Reports Server (NTRS)

Burleigh, Scott C.

2011-01-01

Sptrace is a general-purpose space utilization tracing system that is conceptually similar to the commercial Purify product used to detect leaks and other memory usage errors. It is designed to monitor space utilization in any sort of heap, i.e., a region of data storage on some device (nominally memory; possibly shared and possibly persistent) with a flat address space. This software can trace usage of shared and/or non-volatile storage in addition to private RAM (random access memory). Sptrace is implemented as a set of C function calls that are invoked from within the software that is being examined. The function calls fall into two broad classes: (1) functions that are embedded within the heap management software [e.g., JPL's SDR (Simple Data Recorder) and PSM (Personal Space Management) systems] to enable heap usage analysis by populating a virtual time-sequenced log of usage activity, and (2) reporting functions that are embedded within the application program whose behavior is suspect. For ease of use, these functions may be wrapped privately inside public functions offered by the heap management software. Sptrace can be used for VxWorks or RTEMS realtime systems as easily as for Linux or OS/X systems.

Overview of Probe-based Storage Technologies

NASA Astrophysics Data System (ADS)

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-07-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Overview of Probe-based Storage Technologies.

PubMed

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-12-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Data storage technology comparisons

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1990-01-01

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Paging memory from random access memory to backing storage in a parallel computer

DOEpatents

Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

2013-05-21

Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

The Relationship between Processing and Storage in Working Memory Span: Not Two Sides of the Same Coin

ERIC Educational Resources Information Center

Maehara, Yukio; Saito, Satoru

2007-01-01

In working memory (WM) span tests, participants maintain memory items while performing processing tasks. In this study, we examined the impact of task processing requirements on memory-storage activities, looking at the stimulus order effect and the impact of storage requirements on processing activities, testing the processing time effect in WM…

Holographic storage of biphoton entanglement.

PubMed

Dai, Han-Ning; Zhang, Han; Yang, Sheng-Jun; Zhao, Tian-Ming; Rui, Jun; Deng, You-Jin; Li, Li; Liu, Nai-Le; Chen, Shuai; Bao, Xiao-Hui; Jin, Xian-Min; Zhao, Bo; Pan, Jian-Wei

2012-05-25

Coherent and reversible storage of multiphoton entanglement with a multimode quantum memory is essential for scalable all-optical quantum information processing. Although a single photon has been successfully stored in different quantum systems, storage of multiphoton entanglement remains challenging because of the critical requirement for coherent control of the photonic entanglement source, multimode quantum memory, and quantum interface between them. Here we demonstrate a coherent and reversible storage of biphoton Bell-type entanglement with a holographic multimode atomic-ensemble-based quantum memory. The retrieved biphoton entanglement violates the Bell inequality for 1 μs storage time and a memory-process fidelity of 98% is demonstrated by quantum state tomography.

Organization and Memory in Adulthood.

ERIC Educational Resources Information Center

Hultsch, David F.

This paper discusses organizational processes and memory in general and organizational processes and adult age differences in memory in particular. The simplest analysis of memory is to divide the process into two parts: storage and retrieval. Studies show that the limitation of memory lies primarily in retrieval rather than storage. Organization…

Performance analysis of three-dimensional-triple-level cell and two-dimensional-multi-level cell NAND flash hybrid solid-state drives

NASA Astrophysics Data System (ADS)

Sakaki, Yukiya; Yamada, Tomoaki; Matsui, Chihiro; Yamaga, Yusuke; Takeuchi, Ken

2018-04-01

In order to improve performance of solid-state drives (SSDs), hybrid SSDs have been proposed. Hybrid SSDs consist of more than two types of NAND flash memories or NAND flash memories and storage-class memories (SCMs). However, the cost of hybrid SSDs adopting SCMs is more expensive than that of NAND flash only SSDs because of the high bit cost of SCMs. This paper proposes unique hybrid SSDs with two-dimensional (2D) horizontal multi-level cell (MLC)/three-dimensional (3D) vertical triple-level cell (TLC) NAND flash memories to achieve higher cost-performance. The 2D-MLC/3D-TLC hybrid SSD achieves up to 31% higher performance than the conventional 2D-MLC/2D-TLC hybrid SSD. The factors of different performance between the proposed hybrid SSD and the conventional hybrid SSD are analyzed by changing its block size, read/write/erase latencies, and write unit of 3D-TLC NAND flash memory, by means of a transaction-level modeling simulator.

A role for neuronal piRNAs in the epigenetic control of memory-related synaptic plasticity.

PubMed

Rajasethupathy, Priyamvada; Antonov, Igor; Sheridan, Robert; Frey, Sebastian; Sander, Chris; Tuschl, Thomas; Kandel, Eric R

2012-04-27

Small RNA-mediated gene regulation during development causes long-lasting changes in cellular phenotypes. To determine whether small RNAs of the adult brain can regulate memory storage, a process that requires stable and long-lasting changes in the functional state of neurons, we generated small RNA libraries from the Aplysia CNS. In these libraries, we discovered an unexpectedly abundant expression of a 28 nucleotide sized class of piRNAs in brain, which had been thought to be germline specific. These piRNAs have unique biogenesis patterns, predominant nuclear localization, and robust sensitivity to serotonin, a modulatory transmitter that is important for memory. We find that the Piwi/piRNA complex facilitates serotonin-dependent methylation of a conserved CpG island in the promoter of CREB2, the major inhibitory constraint of memory in Aplysia, leading to enhanced long-term synaptic facilitation. These findings provide a small RNA-mediated gene regulatory mechanism for establishing stable long-term changes in neurons for the persistence of memory. Copyright © 2012 Elsevier Inc. All rights reserved.

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice

NASA Astrophysics Data System (ADS)

Shirakawa, Hiroki; Araidai, Masaaki; Shiraishi, Kenji

2018-04-01

The interfacial phase change memory (iPCM) based on a GeTe/Sb2Te3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.

Coherent storage of temporally multimode light using a spin-wave atomic frequency comb memory

NASA Astrophysics Data System (ADS)

Gündoǧan, M.; Mazzera, M.; Ledingham, P. M.; Cristiani, M.; de Riedmatten, H.

2013-04-01

We report on the coherent and multi-temporal mode storage of light using the full atomic frequency comb memory scheme. The scheme involves the transfer of optical atomic excitations in Pr3+:Y2SiO5 to spin waves in hyperfine levels using strong single-frequency transfer pulses. Using this scheme, a total of five temporal modes are stored and recalled on-demand from the memory. The coherence of the storage and retrieval is characterized using a time-bin interference measurement resulting in visibilities higher than 80%, independent of the storage time. This coherent and multimode spin-wave memory is promising as a quantum memory for light.

A Fault-Tolerant Radiation-Robust Mass Storage Concept for Highly Scaled Flash Memory

NASA Astrophysics Data System (ADS)

Fuchs, Cristian M.; Trinitis, Carsten; Appel, Nicolas; Langer, Martin

2015-09-01

Future spacemissions will require vast amounts of data to be stored and processed aboard spacecraft. While satisfying operational mission requirements, storage systems must guarantee data integrity and recover damaged data throughout the mission. NAND-flash memories have become popular for space-borne high performance mass memory scenarios, though future storage concepts will rely upon highly scaled flash or other memory technologies. With modern flash memory, single bit erasure coding and RAID based concepts are insufficient. Thus, a fully run-time configurable, high performance, dependable storage concept, requiring a minimal set of logic or software. The solution is based on composite erasure coding and can be adjusted for altered mission duration or changing environmental conditions.

TMS-induced neural noise in sensory cortex interferes with short-term memory storage in prefrontal cortex.

PubMed

Bancroft, Tyler D; Hogeveen, Jeremy; Hockley, William E; Servos, Philip

2014-01-01

In a previous study, Harris et al. (2002) found disruption of vibrotactile short-term memory after applying single-pulse transcranial magnetic stimulation (TMS) to primary somatosensory cortex (SI) early in the maintenance period, and suggested that this demonstrated a role for SI in vibrotactile memory storage. While such a role is compatible with recent suggestions that sensory cortex is the storage substrate for working memory, it stands in contrast to a relatively large body of evidence from human EEG and single-cell recording in primates that instead points to prefrontal cortex as the storage substrate for vibrotactile memory. In the present study, we use computational methods to demonstrate how Harris et al.'s results can be reproduced by TMS-induced activity in sensory cortex and subsequent feedforward interference with memory traces stored in prefrontal cortex, thereby reconciling discordant findings in the tactile memory literature.

Brain Region-Specific Activity Patterns after Recent or Remote Memory Retrieval of Auditory Conditioned Fear

ERIC Educational Resources Information Center

Kwon, Jeong-Tae; Jhang, Jinho; Kim, Hyung-Su; Lee, Sujin; Han, Jin-Hee

2012-01-01

Memory is thought to be sparsely encoded throughout multiple brain regions forming unique memory trace. Although evidence has established that the amygdala is a key brain site for memory storage and retrieval of auditory conditioned fear memory, it remains elusive whether the auditory brain regions may be involved in fear memory storage or…

Strain Engineering to Modify the Electrochemistry of Energy Storage Electrodes

PubMed Central

Muralidharan, Nitin; Carter, Rachel; Oakes, Landon; Cohn, Adam P.; Pint, Cary L.

2016-01-01

Strain engineering has been a critical aspect of device design in semiconductor manufacturing for the past decade, but remains relatively unexplored for other applications, such as energy storage. Using mechanical strain as an input parameter to modulate electrochemical potentials of metal oxides opens new opportunities intersecting fields of electrochemistry and mechanics. Here we demonstrate that less than 0.1% strain on a Ni-Ti-O based metal-oxide formed on superelastic shape memory NiTi alloys leads to anodic and cathodic peak potential shifts by up to ~30 mV in an electrochemical cell. Moreover, using the superelastic properties of NiTi to enable strain recovery also recovers the electrochemical potential of the metal oxide, providing mechanistic evidence of strain-modified electrochemistry. These results indicate that mechanical energy can be coupled with electrochemical systems to efficiently design and optimize a new class of strain-modulated energy storage materials. PMID:27283872

Effect of Graphene Addition on Shape Memory Behavior of Epoxy Resins

NASA Technical Reports Server (NTRS)

Williams, Tiffany; Meador, Michael; Miller, Sandi; Scheiman, Daniel

2011-01-01

Shape memory polymers (SMPs) and composites are a special class of smart materials known for their ability to change size and shape upon exposure to an external stimulus (e.g. light, heat, pH, or magnetic field). These materials are commonly used for biomedical applications; however, recent attempts have been made towards developing SMPs and composites for use in aircraft and space applications. Implementing SMPs and composites to create a shape change effect in some aircraft structures could potentially reduce drag, decrease fuel consumption, and improve engine performance. This paper discusses the development of suitable materials to use in morphing aircraft structures. Thermally responsive epoxy SMPs and nanocomposites were developed and the shape memory behavior and thermo-mechanical properties were studied. Overall, preliminary results from dynamic mechanical analysis (DMA) showed that thermally actuated shape memory epoxies and nanocomposites possessed Tgs near approximately 168 C. When graphene nanofiller was added, the storage modulus and crosslinking density decreased. On the other hand, the addition of graphene enhanced the recovery behavior of the shape memory nanocomposites. It was assumed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the nanocomposites.

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

PubMed

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

The past, the future and the biology of memory storage.

PubMed Central

Kandel, E R; Pittenger, C

1999-01-01

We here briefly review a century of accomplishments in studying memory storage and delineate the two major questions that have dominated thinking in this area: the systems question of memory, which concerns where in the brain storage occurs; and the molecular question of memory, which concerns the mechanisms whereby memories are stored and maintained. We go on to consider the themes that memory research may be able to address in the 21st century. Finally, we reflect on the clinical and societal import of our increasing understanding of the mechanisms of memory, discussing possible therapeutic approaches to diseases that manifest with disruptions of learning and possible ethical implication of the ability, which is on the horizon, to ameliorate or even enhance human memory. PMID:10670023

Device and methods for writing and erasing analog information in small memory units via voltage pulses

DOEpatents

El Gabaly Marquez, Farid; Talin, Albert Alec

2018-04-17

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Associative Memory Synthesis, Performance, Storage Capacity And Updating: New Heteroassociative Memory Results

NASA Astrophysics Data System (ADS)

Casasent, David; Telfer, Brian

1988-02-01

The storage capacity, noise performance, and synthesis of associative memories for image analysis are considered. Associative memory synthesis is shown to be very similar to that of linear discriminant functions used in pattern recognition. These lead to new associative memories and new associative memory synthesis and recollection vector encodings. Heteroassociative memories are emphasized in this paper, rather than autoassociative memories, since heteroassociative memories provide scene analysis decisions, rather than merely enhanced output images. The analysis of heteroassociative memories has been given little attention. Heteroassociative memory performance and storage capacity are shown to be quite different from those of autoassociative memories, with much more dependence on the recollection vectors used and less dependence on M/N. This allows several different and preferable synthesis techniques to be considered for associative memories. These new associative memory synthesis techniques and new techniques to update associative memories are included. We also introduce a new SNR performance measure that is preferable to conventional noise standard deviation ratios.

Distinct neuronal interactions in anterior inferotemporal areas of macaque monkeys during retrieval of object association memory.

PubMed

Hirabayashi, Toshiyuki; Tamura, Keita; Takeuchi, Daigo; Takeda, Masaki; Koyano, Kenji W; Miyashita, Yasushi

2014-07-09

In macaque monkeys, the anterior inferotemporal cortex, a region crucial for object memory processing, is composed of two adjacent, hierarchically distinct areas, TE and 36, for which different functional roles and neuronal responses in object memory tasks have been characterized. However, it remains unknown how the neuronal interactions differ between these areas during memory retrieval. Here, we conducted simultaneous recordings from multiple single-units in each of these areas while monkeys performed an object association memory task and examined the inter-area differences in neuronal interactions during the delay period. Although memory neurons showing sustained activity for the presented cue stimulus, cue-holding (CH) neurons, interacted with each other in both areas, only those neurons in area 36 interacted with another type of memory neurons coding for the to-be-recalled paired associate (pair-recall neurons) during memory retrieval. Furthermore, pairs of CH neurons in area TE showed functional coupling in response to each individual object during memory retention, whereas the same class of neuron pairs in area 36 exhibited a comparable strength of coupling in response to both associated objects. These results suggest predominant neuronal interactions in area 36 during the mnemonic processing, which may underlie the pivotal role of this brain area in both storage and retrieval of object association memory. Copyright © 2014 the authors 0270-6474/14/349377-12$15.00/0.

Iconic Memories Die a Sudden Death.

PubMed

Pratte, Michael S

2018-06-01

Iconic memory is characterized by its large storage capacity and brief storage duration, whereas visual working memory is characterized by its small storage capacity. The limited information stored in working memory is often modeled as an all-or-none process in which studied information is either successfully stored or lost completely. This view raises a simple question: If almost all viewed information is stored in iconic memory, yet one second later most of it is completely absent from working memory, what happened to it? Here, I characterized how the precision and capacity of iconic memory changed over time and observed a clear dissociation: Iconic memory suffered from a complete loss of visual items, while the precision of items retained in memory was only marginally affected by the passage of time. These results provide new evidence for the discrete-capacity view of working memory and a new characterization of iconic memory decay.

Memory Is Not Only about Storage.

ERIC Educational Resources Information Center

Huber, Kay L.

1993-01-01

The Atkinson-Shiffrin model of memory has three components: sensory, short term, and long term. Each memory process (such as encoding, storage, and retrieval) can be linked to specific teaching and learning strategies. (SK)

Statistical Description of Associative Memory

NASA Astrophysics Data System (ADS)

Samengo, Inés

2003-03-01

The storage of memories, in the brain, induces some kind of modification in the structural and functional properties of a neural network. Here, a few neuropsychological and neurophysiological experiments are reviewed, suggesting that the plastic changes taking place during memory storage are governed, among other things, by the correlations in the activity of a set of neurons. The Hopfield model is briefly described, showing the way the methods of statistical physics can be useful to describe the storage and retrieval of memories.

Artificial cognitive memory—changing from density driven to functionality driven

NASA Astrophysics Data System (ADS)

Shi, L. P.; Yi, K. J.; Ramanathan, K.; Zhao, R.; Ning, N.; Ding, D.; Chong, T. C.

2011-03-01

Increasing density based on bit size reduction is currently a main driving force for the development of data storage technologies. However, it is expected that all of the current available storage technologies might approach their physical limits in around 15 to 20 years due to miniaturization. To further advance the storage technologies, it is required to explore a new development trend that is different from density driven. One possible direction is to derive insights from biological counterparts. Unlike physical memories that have a single function of data storage, human memory is versatile. It contributes to functions of data storage, information processing, and most importantly, cognitive functions such as adaptation, learning, perception, knowledge generation, etc. In this paper, a brief review of current data storage technologies are presented, followed by discussions of future storage technology development trend. We expect that the driving force will evolve from density to functionality, and new memory modules associated with additional functions other than only data storage will appear. As an initial step toward building a future generation memory technology, we propose Artificial Cognitive Memory (ACM), a memory based intelligent system. We also present the characteristics of ACM, new technologies that can be used to develop ACM components such as bioinspired element cells (silicon, memristor, phase change, etc.), and possible methodologies to construct a biologically inspired hierarchical system.

Rethinking the connection between working memory and language impairment.

PubMed

Archibald, Lisa M D; Harder Griebeling, Katherine

2016-05-01

Working memory deficits have been found for children with specific language impairment (SLI) on tasks imposing increasing short-term memory load with or without additional, consistent (and simple) processing load. To examine the processing function of working memory in children with low language (LL) by employing tasks imposing increasing processing loads with constant storage demands individually adjusted based on each participant's short-term memory capacity. School-age groups with LL (n = 17) and typical language with either average (n = 28) or above-average nonverbal intelligence (n = 15) completed complex working memory-span tasks varying processing load while keeping storage demands constant, varying storage demands while keeping processing load constant, simple storage-span tasks, and measures of language and nonverbal intelligence. Teachers completed questionnaires about cognition and learning. Significantly lower scores were found for the LL than either matched group on storage-based tasks, but no group differences were found on the tasks varying processing load. Teachers' ratings of oral expression and mathematics abilities discriminated those who did or did not complete the most challenging cognitive tasks. The results implicate a deficit in the phonological storage but not in the central executive component of working memory for children with LL. Teacher ratings may reveal personality traits related to perseverance of effort in cognitive research. © 2015 Royal College of Speech and Language Therapists.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

PIMS: Memristor-Based Processing-in-Memory-and-Storage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cook, Jeanine

Continued progress in computing has augmented the quest for higher performance with a new quest for higher energy efficiency. This has led to the re-emergence of Processing-In-Memory (PIM) ar- chitectures that offer higher density and performance with some boost in energy efficiency. Past PIM work either integrated a standard CPU with a conventional DRAM to improve the CPU- memory link, or used a bit-level processor with Single Instruction Multiple Data (SIMD) control, but neither matched the energy consumption of the memory to the computation. We originally proposed to develop a new architecture derived from PIM that more effectively addressed energymore » efficiency for high performance scientific, data analytics, and neuromorphic applications. We also originally planned to implement a von Neumann architecture with arithmetic/logic units (ALUs) that matched the power consumption of an advanced storage array to maximize energy efficiency. Implementing this architecture in storage was our original idea, since by augmenting storage (in- stead of memory), the system could address both in-memory computation and applications that accessed larger data sets directly from storage, hence Processing-in-Memory-and-Storage (PIMS). However, as our research matured, we discovered several things that changed our original direc- tion, the most important being that a PIM that implements a standard von Neumann-type archi- tecture results in significant energy efficiency improvement, but only about a O(10) performance improvement. In addition to this, the emergence of new memory technologies moved us to propos- ing a non-von Neumann architecture, called Superstrider, implemented not in storage, but in a new DRAM technology called High Bandwidth Memory (HBM). HBM is a stacked DRAM tech- nology that includes a logic layer where an architecture such as Superstrider could potentially be implemented.« less

Hardware support for collecting performance counters directly to memory

DOEpatents

Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

2012-09-25

Hardware support for collecting performance counters directly to memory, in one aspect, may include a plurality of performance counters operable to collect one or more counts of one or more selected activities. A first storage element may be operable to store an address of a memory location. A second storage element may be operable to store a value indicating whether the hardware should begin copying. A state machine may be operable to detect the value in the second storage element and trigger hardware copying of data in selected one or more of the plurality of performance counters to the memory location whose address is stored in the first storage element.

Memory-assisted quantum key distribution resilient against multiple-excitation effects

NASA Astrophysics Data System (ADS)

Lo Piparo, Nicolò; Sinclair, Neil; Razavi, Mohsen

2018-01-01

Memory-assisted measurement-device-independent quantum key distribution (MA-MDI-QKD) has recently been proposed as a technique to improve the rate-versus-distance behavior of QKD systems by using existing, or nearly-achievable, quantum technologies. The promise is that MA-MDI-QKD would require less demanding quantum memories than the ones needed for probabilistic quantum repeaters. Nevertheless, early investigations suggest that, in order to beat the conventional memory-less QKD schemes, the quantum memories used in the MA-MDI-QKD protocols must have high bandwidth-storage products and short interaction times. Among different types of quantum memories, ensemble-based memories offer some of the required specifications, but they typically suffer from multiple excitation effects. To avoid the latter issue, in this paper, we propose two new variants of MA-MDI-QKD both relying on single-photon sources for entangling purposes. One is based on known techniques for entanglement distribution in quantum repeaters. This scheme turns out to offer no advantage even if one uses ideal single-photon sources. By finding the root cause of the problem, we then propose another setup, which can outperform single memory-less setups even if we allow for some imperfections in our single-photon sources. For such a scheme, we compare the key rate for different types of ensemble-based memories and show that certain classes of atomic ensembles can improve the rate-versus-distance behavior.

HTMT-class Latency Tolerant Parallel Architecture for Petaflops Scale Computation

NASA Technical Reports Server (NTRS)

Sterling, Thomas; Bergman, Larry

2000-01-01

Computational Aero Sciences and other numeric intensive computation disciplines demand computing throughputs substantially greater than the Teraflops scale systems only now becoming available. The related fields of fluids, structures, thermal, combustion, and dynamic controls are among the interdisciplinary areas that in combination with sufficient resolution and advanced adaptive techniques may force performance requirements towards Petaflops. This will be especially true for compute intensive models such as Navier-Stokes are or when such system models are only part of a larger design optimization computation involving many design points. Yet recent experience with conventional MPP configurations comprising commodity processing and memory components has shown that larger scale frequently results in higher programming difficulty and lower system efficiency. While important advances in system software and algorithms techniques have had some impact on efficiency and programmability for certain classes of problems, in general it is unlikely that software alone will resolve the challenges to higher scalability. As in the past, future generations of high-end computers may require a combination of hardware architecture and system software advances to enable efficient operation at a Petaflops level. The NASA led HTMT project has engaged the talents of a broad interdisciplinary team to develop a new strategy in high-end system architecture to deliver petaflops scale computing in the 2004/5 timeframe. The Hybrid-Technology, MultiThreaded parallel computer architecture incorporates several advanced technologies in combination with an innovative dynamic adaptive scheduling mechanism to provide unprecedented performance and efficiency within practical constraints of cost, complexity, and power consumption. The emerging superconductor Rapid Single Flux Quantum electronics can operate at 100 GHz (the record is 770 GHz) and one percent of the power required by convention semiconductor logic. Wave Division Multiplexing optical communications can approach a peak per fiber bandwidth of 1 Tbps and the new Data Vortex network topology employing this technology can connect tens of thousands of ports providing a bi-section bandwidth on the order of a Petabyte per second with latencies well below 100 nanoseconds, even under heavy loads. Processor-in-Memory (PIM) technology combines logic and memory on the same chip exposing the internal bandwidth of the memory row buffers at low latency. And holographic storage photorefractive storage technologies provide high-density memory with access a thousand times faster than conventional disk technologies. Together these technologies enable a new class of shared memory system architecture with a peak performance in the range of a Petaflops but size and power requirements comparable to today's largest Teraflops scale systems. To achieve high-sustained performance, HTMT combines an advanced multithreading processor architecture with a memory-driven coarse-grained latency management strategy called "percolation", yielding high efficiency while reducing the much of the parallel programming burden. This paper will present the basic system architecture characteristics made possible through this series of advanced technologies and then give a detailed description of the new percolation approach to runtime latency management.

Distributed trace using central performance counter memory

DOEpatents

Satterfield, David L; Sexton, James C

2013-10-22

A plurality of processing cores, are central storage unit having at least memory connected in a daisy chain manner, forming a daisy chain ring layout on an integrated chip. At least one of the plurality of processing cores places trace data on the daisy chain connection for transmitting the trace data to the central storage unit, and the central storage unit detects the trace data and stores the trace data in the memory co-located in with the central storage unit.

Distributed trace using central performance counter memory

DOEpatents

Satterfield, David L.; Sexton, James C.

2013-01-22

A plurality of processing cores, are central storage unit having at least memory connected in a daisy chain manner, forming a daisy chain ring layout on an integrated chip. At least one of the plurality of processing cores places trace data on the daisy chain connection for transmitting the trace data to the central storage unit, and the central storage unit detects the trace data and stores the trace data in the memory co-located in with the central storage unit.

Requirement of the Combination of Mushroom Body ? Lobe and a/ß Lobes for the Retrieval of Both Aversive and Appetitive Early Memories in "Drosophila"

ERIC Educational Resources Information Center

Xie, Zhiyong; Huang, Cheng; Ci, Bo; Lianzhang, Wang; Zhong, Yi

2013-01-01

Extensive studies of "Drosophila" mushroom body in formation and retrieval of olfactory memories allow us to delineate the functional logic for memory storage and retrieval. Currently, there is a questionable disassociation of circuits for memory storage and retrieval during "Drosophila" olfactory memory processing. Formation…

Hold-up power supply for flash memory

NASA Technical Reports Server (NTRS)

Ott, William E. (Inventor)

2004-01-01

A hold-up power supply for flash memory systems is provided. The hold-up power supply provides the flash memory with the power needed to temporarily operate when a power loss exists. This allows the flash memory system to complete any erasures and writes, and thus allows it to shut down gracefully. The hold-up power supply detects when a power loss on a power supply bus is occurring and supplies the power needed for the flash memory system to temporally operate. The hold-up power supply stores power in at least one capacitor. During normal operation, power from a high voltage supply bus is used to charge the storage capacitors. When a power supply loss is detected, the power supply bus is disconnected from the flash memory system. A hold-up controller controls the power flow from the storage capacitors to the flash memory system. The hold-up controller uses feedback to assure that the proper voltage is provided from the storage capacitors to the flash memory system. This power supplied by the storage capacitors allows the flash memory system to complete any erasures and writes, and thus allows the flash memory system to shut down gracefully.

Verbal Inflectional Morphology in L1 and L2 Spanish: A Frequency Effects Study Examining Storage versus Composition

PubMed Central

Bowden, Harriet Wood; Gelfand, Matthew P.; Sanz, Cristina; Ullman, Michael T.

2009-01-01

This study examines the storage vs. composition of Spanish inflected verbal forms in L1 and L2 speakers of Spanish. L2 participants were selected to have mid-to-advanced proficiency, high classroom experience, and low immersion experience, typical of medium-to-advanced foreign language learners. Participants were shown the infinitival forms of verbs from either Class I (the default class, which takes new verbs) or Classes II and III (non-default classes), and were asked to produce either first-person singular present-tense or imperfect forms, in separate tasks. In the present tense, the L1 speakers showed inflected-form frequency effects (i.e., higher frequency forms were produced faster, which is taken as a reflection of storage) for stem-changing (irregular) verb-forms from both Class I (e.g., pensar-pienso) and Classes II and III (e.g., perder-pierdo), as well as for non-stem-changing (regular) forms in Classes II/III (e.g., vender-vendo), in which the regular transformation does not appear to constitute a default. In contrast, Class I regulars (e.g., pescar-pesco), whose non-stem-changing transformation constitutes a default (e.g., it is applied to new verbs), showed no frequency effects. L2 speakers showed frequency effects for all four conditions (Classes I and II/III, regulars and irregulars). In the imperfect tense, the L1 speakers showed frequency effects for Class II/III (-ía-suffixed) but not Class I (-aba-suffixed) forms, even though both involve non-stem-change (regular) default transformations. The L2 speakers showed frequency effects for both types of forms. The pattern of results was not explained by a wide range of potentially confounding experimental and statistical factors, and does not appear to be compatible with single-mechanism models, which argue that all linguistic forms are learned and processed in associative memory. The findings are consistent with a dual-system view in which both verb class and regularity influence the storage vs. composition of inflected forms. Specifically, the data suggest that in L1, inflected verbal forms are stored (as evidenced by frequency effects) unless they are both from Class I and undergo non-stem-changing default transformations. In contrast the findings suggest that at least these L2 participants may store all inflected verb-forms. Taken together, the results support dual-system models of L1 and L2 processing in which, at least at mid-to-advanced L2 proficiency and lower levels of immersion experience, the processing of rule-governed forms may depend not on L1 combinatorial processes, but instead on memorized representations. PMID:20419083

Synaptic Scaling Enables Dynamically Distinct Short- and Long-Term Memory Formation

PubMed Central

Tetzlaff, Christian; Kolodziejski, Christoph; Timme, Marc; Tsodyks, Misha; Wörgötter, Florentin

2013-01-01

Memory storage in the brain relies on mechanisms acting on time scales from minutes, for long-term synaptic potentiation, to days, for memory consolidation. During such processes, neural circuits distinguish synapses relevant for forming a long-term storage, which are consolidated, from synapses of short-term storage, which fade. How time scale integration and synaptic differentiation is simultaneously achieved remains unclear. Here we show that synaptic scaling – a slow process usually associated with the maintenance of activity homeostasis – combined with synaptic plasticity may simultaneously achieve both, thereby providing a natural separation of short- from long-term storage. The interaction between plasticity and scaling provides also an explanation for an established paradox where memory consolidation critically depends on the exact order of learning and recall. These results indicate that scaling may be fundamental for stabilizing memories, providing a dynamic link between early and late memory formation processes. PMID:24204240

Synaptic scaling enables dynamically distinct short- and long-term memory formation.

PubMed

Tetzlaff, Christian; Kolodziejski, Christoph; Timme, Marc; Tsodyks, Misha; Wörgötter, Florentin

2013-10-01

Memory storage in the brain relies on mechanisms acting on time scales from minutes, for long-term synaptic potentiation, to days, for memory consolidation. During such processes, neural circuits distinguish synapses relevant for forming a long-term storage, which are consolidated, from synapses of short-term storage, which fade. How time scale integration and synaptic differentiation is simultaneously achieved remains unclear. Here we show that synaptic scaling - a slow process usually associated with the maintenance of activity homeostasis - combined with synaptic plasticity may simultaneously achieve both, thereby providing a natural separation of short- from long-term storage. The interaction between plasticity and scaling provides also an explanation for an established paradox where memory consolidation critically depends on the exact order of learning and recall. These results indicate that scaling may be fundamental for stabilizing memories, providing a dynamic link between early and late memory formation processes.

A Comprehensive Study on Energy Efficiency and Performance of Flash-based SSD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Seon-Yeon; Kim, Youngjae; Urgaonkar, Bhuvan

2011-01-01

Use of flash memory as a storage medium is becoming popular in diverse computing environments. However, because of differences in interface, flash memory requires a hard-disk-emulation layer, called FTL (flash translation layer). Although the FTL enables flash memory storages to replace conventional hard disks, it induces significant computational and space overhead. Despite the low power consumption of flash memory, this overhead leads to significant power consumption in an overall storage system. In this paper, we analyze the characteristics of flash-based storage devices from the viewpoint of power consumption and energy efficiency by using various methodologies. First, we utilize simulation tomore » investigate the interior operation of flash-based storage of flash-based storages. Subsequently, we measure the performance and energy efficiency of commodity flash-based SSDs by using microbenchmarks to identify the block-device level characteristics and macrobenchmarks to reveal their filesystem level characteristics.« less

Effects of Anxiety on Memory Storage and Updating in Young Children

ERIC Educational Resources Information Center

Visu-Petra, Laura; Cheie, Lavinia; Benga, Oana; Alloway, Tracy Packiam

2011-01-01

The relationship between trait anxiety and memory functioning in young children was investigated. Two studies were conducted, using tasks tapping verbal and visual-spatial short-term memory (Study 1) and working memory (Study 2) in preschoolers. On the verbal storage tasks, there was a detrimental effect of anxiety on processing efficiency…

Memory Erasure Experiments Indicate a Critical Role of CaMKII in Memory Storage.

PubMed

Rossetti, Tom; Banerjee, Somdeb; Kim, Chris; Leubner, Megan; Lamar, Casey; Gupta, Pooja; Lee, Bomsol; Neve, Rachael; Lisman, John

2017-09-27

The abundant synaptic protein CaMKII is necessary for long-term potentiation (LTP) and memory. However, whether CaMKII is required only during initial processes or whether it also mediates memory storage remains unclear. The most direct test of a storage role is the erasure test. In this test, a putative memory molecule is inhibited after learning. The key prediction is that this should produce persistent memory erasure even after the inhibitory agent is removed. We conducted this test using transient viral (HSV) expression of dominant-negative CaMKII-alpha (K42M) in the hippocampus. This produced persistent erasure of conditioned place avoidance. As an additional test, we found that expression of activated CaMKII (T286D/T305A/T306A) impaired place avoidance, a result not expected if a process other than CaMKII stores memory. Our behavioral results, taken together with prior experiments on LTP, strongly support a critical role of CaMKII in LTP maintenance and memory storage. Copyright © 2017 Elsevier Inc. All rights reserved.

Computers, the Human Mind, and My In-Laws' House.

ERIC Educational Resources Information Center

Esque, Timm J.

1996-01-01

Discussion of human memory, computer memory, and the storage of information focuses on a metaphor that can account for memory without storage and can set the stage for systemic research around a more comprehensive, understandable theory. (Author/LRW)

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier.

PubMed

Ahn, Chiyui; Fong, Scott W; Kim, Yongsung; Lee, Seunghyun; Sood, Aditya; Neumann, Christopher M; Asheghi, Mehdi; Goodson, Kenneth E; Pop, Eric; Wong, H-S Philip

2015-10-14

Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 10(5) cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

Short- and long-term memory contributions to immediate serial recognition: evidence from serial position effects.

PubMed

Purser, Harry; Jarrold, Christopher

2010-04-01

A long-standing body of research supports the existence of separable short- and long-term memory systems, relying on phonological and semantic codes, respectively. The aim of the current study was to measure the contribution of long-term knowledge to short-term memory performance by looking for evidence of phonologically and semantically coded storage within a short-term recognition task, among developmental samples. Each experimental trial presented 4-item lists. In Experiment 1 typically developing children aged 5 to 6 years old showed evidence of phonologically coded storage across all 4 serial positions, but evidence of semantically coded storage at Serial Positions 1 and 2. In a further experiment, a group of individuals with Down syndrome was investigated as a test case that might be expected to use semantic coding to support short-term storage, but these participants showed no evidence of semantically coded storage and evidenced phonologically coded storage only at Serial Position 4, suggesting that individuals with Down syndrome have a verbal short-term memory capacity of 1 item. Our results suggest that previous evidence of semantic effects on "short-term memory performance" does not reflect semantic coding in short-term memory itself, and provide an experimental method for researchers wishing to take a relatively pure measure of verbal short-term memory capacity, in cases where rehearsal is unlikely.

Evolution of costly explicit memory and cumulative culture.

PubMed

Nakamaru, Mayuko

2016-06-21

Humans can acquire new information and modify it (cumulative culture) based on their learning and memory abilities, especially explicit memory, through the processes of encoding, consolidation, storage, and retrieval. Explicit memory is categorized into semantic and episodic memories. Animals have semantic memory, while episodic memory is unique to humans and essential for innovation and the evolution of culture. As both episodic and semantic memory are needed for innovation, the evolution of explicit memory influences the evolution of culture. However, previous theoretical studies have shown that environmental fluctuations influence the evolution of imitation (social learning) and innovation (individual learning) and assume that memory is not an evolutionary trait. If individuals can store and retrieve acquired information properly, they can modify it and innovate new information. Therefore, being able to store and retrieve information is essential from the perspective of cultural evolution. However, if both storage and retrieval were too costly, forgetting and relearning would have an advantage over storing and retrieving acquired information. In this study, using mathematical analysis and individual-based simulations, we investigate whether cumulative culture can promote the coevolution of costly memory and social and individual learning, assuming that cumulative culture improves the fitness of each individual. The conclusions are: (1) without cumulative culture, a social learning cost is essential for the evolution of storage-retrieval. Costly storage-retrieval can evolve with individual learning but costly social learning does not evolve. When low-cost social learning evolves, the repetition of forgetting and learning is favored more than the evolution of costly storage-retrieval, even though a cultural trait improves the fitness. (2) When cumulative culture exists and improves fitness, storage-retrieval can evolve with social and/or individual learning, which is not influenced by the degree of the social learning cost. Whether individuals socially learn a low level of culture from observing a high or the low level of culture influences the evolution of memory and learning, especially individual learning. Copyright © 2016 Elsevier Ltd. All rights reserved.

Criteria for identifying the molecular basis of the engram (CaMKII, PKMzeta).

PubMed

Lisman, John

2017-11-29

The engram refers to the molecular changes by which a memory is stored in the brain. Substantial evidence suggests that memory involves learning-dependent changes at synapses, a process termed long-term potentiation (LTP). Thus, understanding the storages process that underlies LTP may provide insight into how the engram is stored. LTP involves induction, maintenance (storage), and expression sub-processes; special tests are required to specifically reveal properties of the storage process. The strongest of these is the Erasure test in which a transiently applied agent that attacks a putative storage molecule may lead to persistent erasure of previously induced LTP/memory. Two major hypotheses have been proposed for LTP/memory storage: the CaMKII and PKM-zeta hypotheses. After discussing the tests that can be used to identify the engram (Necessity test, Saturation/Occlusion test, Erasure test), the status of these hypotheses is evaluated, based on the literature on LTP and memory-guided behavior. Review of the literature indicates that all three tests noted above support the CaMKII hypothesis when done at both the LTP level and at the behavioral level. Taken together, the results strongly suggest that the engram is stored by an LTP process in which CaMKII is a critical memory storage molecule.

Which Working Memory Functions Predict Intelligence?

ERIC Educational Resources Information Center

Oberauer, Klaus; Sub, Heinz-Martin; Wilhelm, Oliver; Wittmann, Werner W.

2008-01-01

Investigates the relationship between three factors of working memory (storage and processing, relational integration, and supervision) and four factors of intelligence (reasoning, speed, memory, and creativity) using structural equation models. Relational integration predicted reasoning ability at least as well as the storage-and-processing…

Short-Term Memory: The "Storage" Component of Human Brain Responses Predicts Recall.

ERIC Educational Resources Information Center

Chapman, Robert M.; And Others

1978-01-01

Presents electrophysiological and behavioral evidence for a neural process related to storage in short-term memory. Predicting recall performance on the basis of the storage component of brain responses is presented. A list of references is also included. (HM)

A connectome of a learning and memory center in the adult Drosophila brain

PubMed Central

Takemura, Shin-ya; Aso, Yoshinori; Hige, Toshihide; Wong, Allan; Lu, Zhiyuan; Xu, C Shan; Rivlin, Patricia K; Hess, Harald; Zhao, Ting; Parag, Toufiq; Berg, Stuart; Huang, Gary; Katz, William; Olbris, Donald J; Plaza, Stephen; Umayam, Lowell; Aniceto, Roxanne; Chang, Lei-Ann; Lauchie, Shirley; Ogundeyi, Omotara; Ordish, Christopher; Shinomiya, Aya; Sigmund, Christopher; Takemura, Satoko; Tran, Julie; Turner, Glenn C; Rubin, Gerald M; Scheffer, Louis K

2017-01-01

Understanding memory formation, storage and retrieval requires knowledge of the underlying neuronal circuits. In Drosophila, the mushroom body (MB) is the major site of associative learning. We reconstructed the morphologies and synaptic connections of all 983 neurons within the three functional units, or compartments, that compose the adult MB’s α lobe, using a dataset of isotropic 8 nm voxels collected by focused ion-beam milling scanning electron microscopy. We found that Kenyon cells (KCs), whose sparse activity encodes sensory information, each make multiple en passant synapses to MB output neurons (MBONs) in each compartment. Some MBONs have inputs from all KCs, while others differentially sample sensory modalities. Only 6% of KC>MBON synapses receive a direct synapse from a dopaminergic neuron (DAN). We identified two unanticipated classes of synapses, KC>DAN and DAN>MBON. DAN activation produces a slow depolarization of the MBON in these DAN>MBON synapses and can weaken memory recall. DOI: http://dx.doi.org/10.7554/eLife.26975.001 PMID:28718765

A Layered Solution for Supercomputing Storage

ScienceCinema

Grider, Gary

2018-06-13

To solve the supercomputing challenge of memory keeping up with processing speed, a team at Los Alamos National Laboratory developed two innovative memory management and storage technologies. Burst buffers peel off data onto flash memory to support the checkpoint/restart paradigm of large simulations. MarFS adds a thin software layer enabling a new tier for campaign storage—based on inexpensive, failure-prone disk drives—between disk drives and tape archives.

Alcohol and Memory: Storage and State Dependency

ERIC Educational Resources Information Center

Parker, Elizabeth S.; And Others

1976-01-01

Effects of acute alcohol intoxication on the storage phase of memory were evaluated with two tasks that minimized response retrieval: unpaced paired-associate learning with highly available responses and forced-choice picture recognition. It was concluded that storage processes are sensitive to disruption by alcohol. (CHK)

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

NASA Astrophysics Data System (ADS)

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

2018-05-01

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency.

PubMed

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A; Chen, Ying-Cheng

2018-05-04

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Faithful Solid State Optical Memory with Dynamically Decoupled Spin Wave Storage

NASA Astrophysics Data System (ADS)

Lovrić, Marko; Suter, Dieter; Ferrier, Alban; Goldner, Philippe

2013-07-01

We report a high fidelity optical memory in which dynamical decoupling is used to extend the storage time. This is demonstrated in a rare-earth doped crystal in which optical coherences were transferred to nuclear spin coherences and then protected against environmental noise by dynamical decoupling, leading to storage times of up to 4.2 ms. An interference experiment shows that relative phases of input pulses are preserved through the whole storage and retrieval process with a visibility ≈1, demonstrating the usefulness of dynamical decoupling for extending the storage time of quantum memories. We also show that dynamical decoupling sequences insensitive to initial spin coherence increase retrieval efficiency.

Faithful solid state optical memory with dynamically decoupled spin wave storage.

PubMed

Lovrić, Marko; Suter, Dieter; Ferrier, Alban; Goldner, Philippe

2013-07-12

We report a high fidelity optical memory in which dynamical decoupling is used to extend the storage time. This is demonstrated in a rare-earth doped crystal in which optical coherences were transferred to nuclear spin coherences and then protected against environmental noise by dynamical decoupling, leading to storage times of up to 4.2 ms. An interference experiment shows that relative phases of input pulses are preserved through the whole storage and retrieval process with a visibility ≈1, demonstrating the usefulness of dynamical decoupling for extending the storage time of quantum memories. We also show that dynamical decoupling sequences insensitive to initial spin coherence increase retrieval efficiency.

Space Radiation Effects in Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Johnston, A. H.

2001-01-01

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

Quantum memory with optically trapped atoms.

PubMed

Chuu, Chih-Sung; Strassel, Thorsten; Zhao, Bo; Koch, Markus; Chen, Yu-Ao; Chen, Shuai; Yuan, Zhen-Sheng; Schmiedmayer, Jörg; Pan, Jian-Wei

2008-09-19

We report the experimental demonstration of quantum memory for collective atomic states in a far-detuned optical dipole trap. Generation of the collective atomic state is heralded by the detection of a Raman scattered photon and accompanied by storage in the ensemble of atoms. The optical dipole trap provides confinement for the atoms during the quantum storage while retaining the atomic coherence. We probe the quantum storage by cross correlation of the photon pair arising from the Raman scattering and the retrieval of the atomic state stored in the memory. Nonclassical correlations are observed for storage times up to 60 mus.

Up-to-date state of storage techniques used for large numerical data files

NASA Technical Reports Server (NTRS)

Chlouba, V.

1975-01-01

Methods for data storage and output in data banks and memory files are discussed along with a survey of equipment available for this. Topics discussed include magnetic tapes, magnetic disks, Terabit magnetic tape memory, Unicon 690 laser memory, IBM 1360 photostore, microfilm recording equipment, holographic recording, film readers, optical character readers, digital data storage techniques, and photographic recording. The individual types of equipment are summarized in tables giving the basic technical parameters.

Improved memory word line configuration allows high storage density

NASA Technical Reports Server (NTRS)

1966-01-01

Plated wire memory word drive line allows high storage density, good plated wire transmission and a simplified memory plane configuration. A half-turn word drive line with a magnetic keeper is used. The ground plane provides the return path for both the word current and the plated wire transmission line.

Training of Attentional Filtering, but Not of Memory Storage, Enhances Working Memory Efficiency by Strengthening the Neuronal Gatekeeper Network.

PubMed

Schmicker, Marlen; Schwefel, Melanie; Vellage, Anne-Katrin; Müller, Notger G

2016-04-01

Memory training (MT) in older adults with memory deficits often leads to frustration and, therefore, is usually not recommended. Here, we pursued an alternative approach and looked for transfer effects of 1-week attentional filter training (FT) on working memory performance and its neuronal correlates in young healthy humans. The FT effects were compared with pure MT, which lacked the necessity to filter out irrelevant information. Before and after training, all participants performed an fMRI experiment that included a combined task in which stimuli had to be both filtered based on color and stored in memory. We found that training induced processing changes by biasing either filtering or storage. FT induced larger transfer effects on the untrained cognitive function than MT. FT increased neuronal activity in frontal parts of the neuronal gatekeeper network, which is proposed to hinder irrelevant information from being unnecessarily stored in memory. MT decreased neuronal activity in the BG part of the gatekeeper network but enhanced activity in the parietal storage node. We take these findings as evidence that FT renders working memory more efficient by strengthening the BG-prefrontal gatekeeper network. MT, on the other hand, simply stimulates storage of any kind of information. These findings illustrate a tight connection between working memory and attention, and they may open up new avenues for ameliorating memory deficits in patients with cognitive impairments.

Storage or Retrieval Deficit: The Yin and Yang of Amnesia

ERIC Educational Resources Information Center

Hardt, Oliver; Wang, Szu-Han; Nader, Karim

2009-01-01

To this day, it remains unresolved whether experimental amnesia reflects failed memory storage or the inability to retrieve otherwise intact memory. Methodological as well as conceptual reasons prevented deciding between these two alternatives: The absence of recovery from amnesia is typically taken as supporting storage impairment…

Data systems and computer science space data systems: Onboard memory and storage

NASA Technical Reports Server (NTRS)

Shull, Tom

1991-01-01

The topics are presented in viewgraph form and include the following: technical objectives; technology challenges; state-of-the-art assessment; mass storage comparison; SODR drive and system concepts; program description; vertical Bloch line (VBL) device concept; relationship to external programs; and backup charts for memory and storage.

Structural Components of Synaptic Plasticity and Memory Consolidation

PubMed Central

Bailey, Craig H.; Kandel, Eric R.; Harris, Kristen M.

2015-01-01

Consolidation of implicit memory in the invertebrate Aplysia and explicit memory in the mammalian hippocampus are associated with remodeling and growth of preexisting synapses and the formation of new synapses. Here, we compare and contrast structural components of the synaptic plasticity that underlies these two distinct forms of memory. In both cases, the structural changes involve time-dependent processes. Thus, some modifications are transient and may contribute to early formative stages of long-term memory, whereas others are more stable, longer lasting, and likely to confer persistence to memory storage. In addition, we explore the possibility that trans-synaptic signaling mechanisms governing de novo synapse formation during development can be reused in the adult for the purposes of structural synaptic plasticity and memory storage. Finally, we discuss how these mechanisms set in motion structural rearrangements that prepare a synapse to strengthen the same memory and, perhaps, to allow it to take part in other memories as a basis for understanding how their anatomical representation results in the enhanced expression and storage of memories in the brain. PMID:26134321

Adult age differences in the storage of information in working memory.

PubMed

Foos, P W; Wright, L

1992-01-01

The performance of 97 young and 91 old persons were compared to determine if a deficiency in working memory resources for processing, storage, or allocation could be detected. Persons simultaneously performed a storage and one of two processing tasks while instructed to allocate resources to processing, storage, or both tasks. The storage task involved remembering the names of one, three, or five persons. Processing tasks involved solving addition problems presented on flashcards or answering common knowledge questions. Results showed increased age differences on the storage task as demands for resources increased but no differences on processing tasks. Individuals seemed unable to allocate resources as instructed. A comparison of young-old and old-old groups showed the same results as those obtained comparing young and old groups and support the hypothesis of a deficiency of storage, but not processing, resources in working memory for old, especially old-old, adults.

Using electrophysiology to demonstrate that cuing affects long-term memory storage over the short term

PubMed Central

Maxcey, Ashleigh M.; Fukuda, Keisuke; Song, Won S.; Woodman, Geoffrey F.

2015-01-01

As researchers who study working memory, we often assume that participants keep a representation of an object in working memory when we present a cue that indicates that object will be tested in a couple of seconds. This intuitively accounts for how well people can remember a cued object relative to their memory for that same object presented without a cue. However, it is possible that this superior memory does not purely reflect storage of the cued object in working memory. We tested the hypothesis that cued presented during a stream of objects, followed by a short retention interval and immediate memory test, change how information is handled by long-term memory. We tested this hypothesis using a family of frontal event-related potentials (ERPs) believed to reflect long-term memory storage. We found that these frontal indices of long-term memory were sensitive to the task relevance of objects signaled by auditory cues, even when objects repeat frequently such that proactive interference was high. Our findings indicate the problematic nature of assuming process purity in the study of working memory, and demonstrate how frequent stimulus repetitions fail to isolate the role of working memory mechanisms. PMID:25604772

Emerging memories

NASA Astrophysics Data System (ADS)

Baldi, Livio; Bez, Roberto; Sandhu, Gurtej

2014-12-01

Memory is a key component of any data processing system. Following the classical Turing machine approach, memories hold both the data to be processed and the rules for processing them. In the history of microelectronics, the distinction has been rather between working memory, which is exemplified by DRAM, and storage memory, exemplified by NAND. These two types of memory devices now represent 90% of all memory market and 25% of the total semiconductor market, and have been the technology drivers in the last decades. Even if radically different in characteristics, they are however based on the same storage mechanism: charge storage, and this mechanism seems to be near to reaching its physical limits. The search for new alternative memory approaches, based on more scalable mechanisms, has therefore gained new momentum. The status of incumbent memory technologies and their scaling limitations will be discussed. Emerging memory technologies will be analyzed, starting from the ones that are already present for niche applications, and which are getting new attention, thanks to recent technology breakthroughs. Maturity level, physical limitations and potential for scaling will be compared to existing memories. At the end the possible future composition of memory systems will be discussed.

Using electrophysiology to demonstrate that cueing affects long-term memory storage over the short term.

PubMed

Maxcey, Ashleigh M; Fukuda, Keisuke; Song, Won S; Woodman, Geoffrey F

2015-10-01

As researchers who study working memory, we often assume that participants keep a representation of an object in working memory when we present a cue that indicates that the object will be tested in a couple of seconds. This intuitively accounts for how well people can remember a cued object, relative to their memory for that same object presented without a cue. However, it is possible that this superior memory does not purely reflect storage of the cued object in working memory. We tested the hypothesis that cues presented during a stream of objects, followed by a short retention interval and immediate memory test, can change how information is handled by long-term memory. We tested this hypothesis by using a family of frontal event-related potentials believed to reflect long-term memory storage. We found that these frontal indices of long-term memory were sensitive to the task relevance of objects signaled by auditory cues, even when the objects repeated frequently, such that proactive interference was high. Our findings indicate the problematic nature of assuming process purity in the study of working memory, and demonstrate that frequent stimulus repetitions fail to isolate the role of working memory mechanisms.

Efficient packing of patterns in sparse distributed memory by selective weighting of input bits

NASA Technical Reports Server (NTRS)

Kanerva, Pentti

1991-01-01

When a set of patterns is stored in a distributed memory, any given storage location participates in the storage of many patterns. From the perspective of any one stored pattern, the other patterns act as noise, and such noise limits the memory's storage capacity. The more similar the retrieval cues for two patterns are, the more the patterns interfere with each other in memory, and the harder it is to separate them on retrieval. A method is described of weighting the retrieval cues to reduce such interference and thus to improve the separability of patterns that have similar cues.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

NASA Astrophysics Data System (ADS)

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-01

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

PubMed

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-23

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

A Comprehensive Investigation of Memory Impairment in Attention Deficit Hyperactivity Disorder and Oppositional Defiant Disorder

ERIC Educational Resources Information Center

Rhodes, Sinead M.; Park, Joanne; Seth, Sarah; Coghill, David R.

2012-01-01

Background: We conducted a comprehensive and systematic assessment of memory functioning in drug-naive boys with attention deficit hyperactivity disorder (ADHD) and oppositional defiant disorder (ODD). Methods: Boys performed verbal and spatial working memory (WM) component (storage and central executive) and verbal and spatial storage load tasks,…

On the Law Relating Processing to Storage in Working Memory

ERIC Educational Resources Information Center

Barrouillet, Pierre; Portrat, Sophie; Camos, Valerie

2011-01-01

"Working memory" is usually defined in cognitive psychology as a system devoted to the simultaneous processing and maintenance of information. However, although many models of working memory have been put forward during the last decades, they often leave underspecified the dynamic interplay between processing and storage. Moreover, the account of…

Coherence time of over a second in a telecom-compatible quantum memory storage material

NASA Astrophysics Data System (ADS)

Rančić, Miloš; Hedges, Morgan P.; Ahlefeldt, Rose L.; Sellars, Matthew J.

2018-01-01

Quantum memories for light will be essential elements in future long-range quantum communication networks. These memories operate by reversibly mapping the quantum state of light onto the quantum transitions of a material system. For networks, the quantum coherence times of these transitions must be long compared to the network transmission times, approximately 100 ms for a global communication network. Due to a lack of a suitable storage material, a quantum memory that operates in the 1,550 nm optical fibre communication band with a storage time greater than 1 μs has not been demonstrated. Here we describe the spin dynamics of 167Er3+: Y2SiO5 in a high magnetic field and demonstrate that this material has the characteristics for a practical quantum memory in the 1,550 nm communication band. We observe a hyperfine coherence time of 1.3 s. We also demonstrate efficient spin pumping of the entire ensemble into a single hyperfine state, a requirement for broadband spin-wave storage. With an absorption of 70 dB cm-1 at 1,538 nm and Λ transitions enabling spin-wave storage, this material is the first candidate identified for an efficient, broadband quantum memory at telecommunication wavelengths.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.

PubMed

Zhou, Li; Mao, Jingyu; Ren, Yi; Han, Su-Ting; Roy, Vellaisamy A L; Zhou, Ye

2018-03-01

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Contribution of underlying processes to improved visuospatial working memory associated with physical activity.

PubMed

Ji, Qingchun; Wang, Yingying; Guo, Wei; Zhou, Chenglin

2017-01-01

Working memory is critical for various cognitive processes and can be separated into two stages: short-term memory storage and manipulation processing. Although previous studies have demonstrated that increased physical activity (PA) improves working memory and that males outperform females on visuospatial working memory tasks, few studies have determined the contribution of the two underlying stages to the visuospatial working memory improvement associated with PA. Thus, the aims of the present study were to verify the relationship between physical activity and visuospatial working memory, determine whether one or both stages were affected by PA, and investigate any sex differences. A total of 56 undergraduate students were recruited for this study. Their scores on the International Physical Activity Questionnaire (IPAQ) were used to separate them into either a lower PA ( n  = 26; IPAQ score ≤3,000 metabolic equivalent [MET]-min/week) or higher PA ( n  = 30; IPAQ score >3,000 MET-min/week) group. Participants were required to complete three tasks: a visuospatial working memory task, a task that examines the short-term memory storage stage, and a mental rotation task that examines the active manipulation stage. Participants in the higher PA group maintained similar accuracy but displayed significantly faster reaction times (RT) than those in the lower PA group on the visuospatial working memory and manipulation tasks. By contrast, no difference was observed between groups on the short-term memory storage task. In addition, no effects of sex were detected. Our results confirm that PA was positively to visuospatial working memory and that this positive relationship was associated with more rapid cognitive processing during the manipulation stage, with little or no relationship between PA and the memory storage stage of visuospatial working memory.

Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

NASA Astrophysics Data System (ADS)

She, Xiao-Jian; Liu, Jie; Zhang, Jing-Yu; Gao, Xu; Wang, Sui-Dong

2013-09-01

Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

NASA Astrophysics Data System (ADS)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

PubMed

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

2017-08-11

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

Levels of processing and language modality specificity in working memory.

PubMed

Rudner, Mary; Karlsson, Thomas; Gunnarsson, Johan; Rönnberg, Jerker

2013-03-01

Neural networks underpinning working memory demonstrate sign language specific components possibly related to differences in temporary storage mechanisms. A processing approach to memory systems suggests that the organisation of memory storage is related to type of memory processing as well. In the present study, we investigated for the first time semantic, phonological and orthographic processing in working memory for sign- and speech-based language. During fMRI we administered a picture-based 2-back working memory task with Semantic, Phonological, Orthographic and Baseline conditions to 11 deaf signers and 20 hearing non-signers. Behavioural data showed poorer and slower performance for both groups in Phonological and Orthographic conditions than in the Semantic condition, in line with depth-of-processing theory. An exclusive masking procedure revealed distinct sign-specific neural networks supporting working memory components at all three levels of processing. The overall pattern of sign-specific activations may reflect a relative intermodality difference in the relationship between phonology and semantics influencing working memory storage and processing. Copyright © 2012 Elsevier Ltd. All rights reserved.

The contribution of temporary storage and executive processes to category learning.

PubMed

Wang, Tengfei; Ren, Xuezhu; Schweizer, Karl

2015-09-01

Three distinctly different working memory processes, temporary storage, mental shifting and inhibition, were proposed to account for individual differences in category learning. A sample of 213 participants completed a classic category learning task and two working memory tasks that were experimentally manipulated for tapping specific working memory processes. Fixed-links models were used to decompose data of the category learning task into two independent components representing basic performance and improvement in performance in category learning. Processes of working memory were also represented by fixed-links models. In a next step the three working memory processes were linked to components of category learning. Results from modeling analyses indicated that temporary storage had a significant effect on basic performance and shifting had a moderate effect on improvement in performance. In contrast, inhibition showed no effect on any component of the category learning task. These results suggest that temporary storage and the shifting process play different roles in the course of acquiring new categories. Copyright © 2015 Elsevier B.V. All rights reserved.

Highly-efficient quantum memory for polarization qubits in a spatially-multiplexed cold atomic ensemble.

PubMed

Vernaz-Gris, Pierre; Huang, Kun; Cao, Mingtao; Sheremet, Alexandra S; Laurat, Julien

2018-01-25

Quantum memory for flying optical qubits is a key enabler for a wide range of applications in quantum information. A critical figure of merit is the overall storage and retrieval efficiency. So far, despite the recent achievements of efficient memories for light pulses, the storage of qubits has suffered from limited efficiency. Here we report on a quantum memory for polarization qubits that combines an average conditional fidelity above 99% and efficiency around 68%, thereby demonstrating a reversible qubit mapping where more information is retrieved than lost. The qubits are encoded with weak coherent states at the single-photon level and the memory is based on electromagnetically-induced transparency in an elongated laser-cooled ensemble of cesium atoms, spatially multiplexed for dual-rail storage. This implementation preserves high optical depth on both rails, without compromise between multiplexing and storage efficiency. Our work provides an efficient node for future tests of quantum network functionalities and advanced photonic circuits.

Contralateral Delay Activity Tracks Fluctuations in Working Memory Performance.

PubMed

Adam, Kirsten C S; Robison, Matthew K; Vogel, Edward K

2018-01-08

Neural measures of working memory storage, such as the contralateral delay activity (CDA), are powerful tools in working memory research. CDA amplitude is sensitive to working memory load, reaches an asymptote at known behavioral limits, and predicts individual differences in capacity. An open question, however, is whether neural measures of load also track trial-by-trial fluctuations in performance. Here, we used a whole-report working memory task to test the relationship between CDA amplitude and working memory performance. If working memory failures are due to decision-based errors and retrieval failures, CDA amplitude would not differentiate good and poor performance trials when load is held constant. If failures arise during storage, then CDA amplitude should track both working memory load and trial-by-trial performance. As expected, CDA amplitude tracked load (Experiment 1), reaching an asymptote at three items. In Experiment 2, we tracked fluctuations in trial-by-trial performance. CDA amplitude was larger (more negative) for high-performance trials compared with low-performance trials, suggesting that fluctuations in performance were related to the successful storage of items. During working memory failures, participants oriented their attention to the correct side of the screen (lateralized P1) and maintained covert attention to the correct side during the delay period (lateralized alpha power suppression). Despite the preservation of attentional orienting, we found impairments consistent with an executive attention theory of individual differences in working memory capacity; fluctuations in executive control (indexed by pretrial frontal theta power) may be to blame for storage failures.

Holographic memory for high-density data storage and high-speed pattern recognition

NASA Astrophysics Data System (ADS)

Gu, Claire

2002-09-01

As computers and the internet become faster and faster, more and more information is transmitted, received, and stored everyday. The demand for high density and fast access time data storage is pushing scientists and engineers to explore all possible approaches including magnetic, mechanical, optical, etc. Optical data storage has already demonstrated its potential in the competition against other storage technologies. CD and DVD are showing their advantages in the computer and entertainment market. What motivated the use of optical waves to store and access information is the same as the motivation for optical communication. Light or an optical wave has an enormous capacity (or bandwidth) to carry information because of its short wavelength and parallel nature. In optical storage, there are two types of mechanism, namely localized and holographic memories. What gives the holographic data storage an advantage over localized bit storage is the natural ability to read the stored information in parallel, therefore, meeting the demand for fast access. Another unique feature that makes the holographic data storage attractive is that it is capable of performing associative recall at an incomparable speed. Therefore, volume holographic memory is particularly suitable for high-density data storage and high-speed pattern recognition. In this paper, we review previous works on volume holographic memories and discuss the challenges for this technology to become a reality.

Performance analysis and comparison of a minimum interconnections direct storage model with traditional neural bidirectional memories.

PubMed

Bhatti, A Aziz

2009-12-01

This study proposes an efficient and improved model of a direct storage bidirectional memory, improved bidirectional associative memory (IBAM), and emphasises the use of nanotechnology for efficient implementation of such large-scale neural network structures at a considerable lower cost reduced complexity, and less area required for implementation. This memory model directly stores the X and Y associated sets of M bipolar binary vectors in the form of (MxN(x)) and (MxN(y)) memory matrices, requires O(N) or about 30% of interconnections with weight strength ranging between +/-1, and is computationally very efficient as compared to sequential, intraconnected and other bidirectional associative memory (BAM) models of outer-product type that require O(N(2)) complex interconnections with weight strength ranging between +/-M. It is shown that it is functionally equivalent to and possesses all attributes of a BAM of outer-product type, and yet it is simple and robust in structure, very large scale integration (VLSI), optical and nanotechnology realisable, modular and expandable neural network bidirectional associative memory model in which the addition or deletion of a pair of vectors does not require changes in the strength of interconnections of the entire memory matrix. The analysis of retrieval process, signal-to-noise ratio, storage capacity and stability of the proposed model as well as of the traditional BAM has been carried out. Constraints on and characteristics of unipolar and bipolar binaries for improved storage and retrieval are discussed. The simulation results show that it has log(e) N times higher storage capacity, superior performance, faster convergence and retrieval time, when compared to traditional sequential and intraconnected bidirectional memories.

Brain region-specific activity patterns after recent or remote memory retrieval of auditory conditioned fear.

PubMed

Kwon, Jeong-Tae; Jhang, Jinho; Kim, Hyung-Su; Lee, Sujin; Han, Jin-Hee

2012-09-19

Memory is thought to be sparsely encoded throughout multiple brain regions forming unique memory trace. Although evidence has established that the amygdala is a key brain site for memory storage and retrieval of auditory conditioned fear memory, it remains elusive whether the auditory brain regions may be involved in fear memory storage or retrieval. To investigate this possibility, we systematically imaged the brain activity patterns in the lateral amygdala, MGm/PIN, and AuV/TeA using activity-dependent induction of immediate early gene zif268 after recent and remote memory retrieval of auditory conditioned fear. Consistent with the critical role of the amygdala in fear memory, the zif268 activity in the lateral amygdala was significantly increased after both recent and remote memory retrieval. Interesting, however, the density of zif268 (+) neurons in both MGm/PIN and AuV/TeA, particularly in layers IV and VI, was increased only after remote but not recent fear memory retrieval compared to control groups. Further analysis of zif268 signals in AuV/TeA revealed that conditioned tone induced stronger zif268 induction compared to familiar tone in each individual zif268 (+) neuron after recent memory retrieval. Taken together, our results support that the lateral amygdala is a key brain site for permanent fear memory storage and suggest that MGm/PIN and AuV/TeA might play a role for remote memory storage or retrieval of auditory conditioned fear, or, alternatively, that these auditory brain regions might have a different way of processing for familiar or conditioned tone information at recent and remote time phases.

Analog Nonvolatile Computer Memory Circuits

NASA Technical Reports Server (NTRS)

MacLeod, Todd

2007-01-01

In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value, between the positive and negative FFET saturation values. This signal value would represent a numerical value of interest corresponding to multiple bits: for example, if the memory circuit were designed to distinguish among 16 different analog values, then each cell could store 4 bits. Simultaneously with writing the signal value in the storage FFET, a negative saturation signal value would be stored in the control FFET. The decay of this control-FFET signal from the saturation value would serve as a model of the decay, for use in regenerating the numerical value of interest from its decaying analog signal value. The memory circuit would include addressing, reading, and writing circuitry that would have features in common with the corresponding parts of other memory circuits, but would also have several distinctive features. The writing circuitry would include a digital-to-analog converter (DAC); the reading circuitry would include an analog-to-digital converter (ADC). For writing a numerical value of interest in a given cell, that cell would be addressed, the saturation value would be written in the control FFET in that cell, and the non-saturation analog value representing the numerical value of interest would be generated by use of the DAC and stored in the storage FFET in that cell. For reading the numerical value of interest stored in a given cell, the cell would be addressed, the ADC would convert the decaying control and storage analog signal values to digital values, and an associated fast digital processing circuit would regenerate the numerical value from digital values.

The storage and recall of auditory memory.

PubMed

Nebenzahl, I; Albeck, Y

1990-01-01

The architecture of the auditory memory is investigated. The auditory information is assumed to be represented by f-t patterns. With the help of a psycho-physical experiment it is demonstrated that the storage of these patterns is highly folded in the sense that a long signal is broken into many short stretches before being stored in the memory. Recognition takes place by correlating newly heard input in the short term memory to information previously stored in the long term memory. We show that this correlation is performed after the input is accumulated and held statically in the short term memory.

An upconverted photonic nonvolatile memory.

PubMed

Zhou, Ye; Han, Su-Ting; Chen, Xian; Wang, Feng; Tang, Yong-Bing; Roy, V A L

2014-08-21

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

A Probabilistic Palimpsest Model of Visual Short-term Memory

PubMed Central

Matthey, Loic; Bays, Paul M.; Dayan, Peter

2015-01-01

Working memory plays a key role in cognition, and yet its mechanisms remain much debated. Human performance on memory tasks is severely limited; however, the two major classes of theory explaining the limits leave open questions about key issues such as how multiple simultaneously-represented items can be distinguished. We propose a palimpsest model, with the occurrent activity of a single population of neurons coding for several multi-featured items. Using a probabilistic approach to storage and recall, we show how this model can account for many qualitative aspects of existing experimental data. In our account, the underlying nature of a memory item depends entirely on the characteristics of the population representation, and we provide analytical and numerical insights into critical issues such as multiplicity and binding. We consider representations in which information about individual feature values is partially separate from the information about binding that creates single items out of multiple features. An appropriate balance between these two types of information is required to capture fully the different types of error seen in human experimental data. Our model provides the first principled account of misbinding errors. We also suggest a specific set of stimuli designed to elucidate the representations that subjects actually employ. PMID:25611204

A probabilistic palimpsest model of visual short-term memory.

PubMed

Matthey, Loic; Bays, Paul M; Dayan, Peter

2015-01-01

Working memory plays a key role in cognition, and yet its mechanisms remain much debated. Human performance on memory tasks is severely limited; however, the two major classes of theory explaining the limits leave open questions about key issues such as how multiple simultaneously-represented items can be distinguished. We propose a palimpsest model, with the occurrent activity of a single population of neurons coding for several multi-featured items. Using a probabilistic approach to storage and recall, we show how this model can account for many qualitative aspects of existing experimental data. In our account, the underlying nature of a memory item depends entirely on the characteristics of the population representation, and we provide analytical and numerical insights into critical issues such as multiplicity and binding. We consider representations in which information about individual feature values is partially separate from the information about binding that creates single items out of multiple features. An appropriate balance between these two types of information is required to capture fully the different types of error seen in human experimental data. Our model provides the first principled account of misbinding errors. We also suggest a specific set of stimuli designed to elucidate the representations that subjects actually employ.

How Working Memory Relates to Children's Reading Comprehension: The Importance of Domain-Specificity in Storage and Processing

ERIC Educational Resources Information Center

Nouwens, Suzan; Groen, Margriet A.; Verhoeven, Ludo

2017-01-01

Working memory is considered a well-established predictor of individual variation in reading comprehension in children and adults. However, how storage and processing capacities of working memory in both the phonological and semantic domain relate to reading comprehension is still unclear. In the current study, we investigated the contribution of…

Down Syndrome and Short-Term Memory Impairment: A Storage or Retrieval Deficit?

ERIC Educational Resources Information Center

Adler, Sol; McDade, Hiram L.

1980-01-01

Three groups of eight Ss (Down's syndrome, CA control, and MA control) received a battery of tests to assess recall and recognition memory using either auditory or visual input with verbal and nonverbal responses. Results indicated that the Down's syndrome group possessed deficits in both storage and retrieval abilities, with storage of visually…

Influence of Synaptic Depression on Memory Storage Capacity

NASA Astrophysics Data System (ADS)

Otsubo, Yosuke; Nagata, Kenji; Oizumi, Masafumi; Okada, Masato

2011-08-01

Synaptic efficacy between neurons is known to change within a short time scale dynamically. Neurophysiological experiments show that high-frequency presynaptic inputs decrease synaptic efficacy between neurons. This phenomenon is called synaptic depression, a short term synaptic plasticity. Many researchers have investigated how the synaptic depression affects the memory storage capacity. However, the noise has not been taken into consideration in their analysis. By introducing ``temperature'', which controls the level of the noise, into an update rule of neurons, we investigate the effects of synaptic depression on the memory storage capacity in the presence of the noise. We analytically compute the storage capacity by using a statistical mechanics technique called Self Consistent Signal to Noise Analysis (SCSNA). We find that the synaptic depression decreases the storage capacity in the case of finite temperature in contrast to the case of the low temperature limit, where the storage capacity does not change.

Storage and retrieval of THz-bandwidth single photons using a room-temperature diamond quantum memory.

PubMed

England, Duncan G; Fisher, Kent A G; MacLean, Jean-Philippe W; Bustard, Philip J; Lausten, Rune; Resch, Kevin J; Sussman, Benjamin J

2015-02-06

We report the storage and retrieval of single photons, via a quantum memory, in the optical phonons of a room-temperature bulk diamond. The THz-bandwidth heralded photons are generated by spontaneous parametric down-conversion and mapped to phonons via a Raman transition, stored for a variable delay, and released on demand. The second-order correlation of the memory output is g((2))(0)=0.65±0.07, demonstrating a preservation of nonclassical photon statistics throughout storage and retrieval. The memory is low noise, high speed and broadly tunable; it therefore promises to be a versatile light-matter interface for local quantum processing applications.

Estimates of Storage Capacity of Multilayer Perceptron with Threshold Logic Hidden Units.

PubMed

Kowalczyk, Adam

1997-11-01

We estimate the storage capacity of multilayer perceptron with n inputs, h(1) threshold logic units in the first hidden layer and 1 output. We show that if the network can memorize 50% of all dichotomies of a randomly selected N-tuple of points of R(n) with probability 1, then N

Quantum storage of entangled telecom-wavelength photons in an erbium-doped optical fibre

NASA Astrophysics Data System (ADS)

Saglamyurek, Erhan; Jin, Jeongwan; Verma, Varun B.; Shaw, Matthew D.; Marsili, Francesco; Nam, Sae Woo; Oblak, Daniel; Tittel, Wolfgang

2015-02-01

The realization of a future quantum Internet requires the processing and storage of quantum information at local nodes and interconnecting distant nodes using free-space and fibre-optic links. Quantum memories for light are key elements of such quantum networks. However, to date, neither an atomic quantum memory for non-classical states of light operating at a wavelength compatible with standard telecom fibre infrastructure, nor a fibre-based implementation of a quantum memory, has been reported. Here, we demonstrate the storage and faithful recall of the state of a 1,532 nm wavelength photon entangled with a 795 nm photon, in an ensemble of cryogenically cooled erbium ions doped into a 20-m-long silica fibre, using a photon-echo quantum memory protocol. Despite its currently limited efficiency and storage time, our broadband light-matter interface brings fibre-based quantum networks one step closer to reality.

An elementary quantum network using robust nuclear spin qubits in diamond

NASA Astrophysics Data System (ADS)

Kalb, Norbert; Reiserer, Andreas; Humphreys, Peter; Blok, Machiel; van Bemmelen, Koen; Twitchen, Daniel; Markham, Matthew; Taminiau, Tim; Hanson, Ronald

Quantum registers containing multiple robust qubits can form the nodes of future quantum networks for computation and communication. Information storage within such nodes must be resilient to any type of local operation. Here we demonstrate multiple robust memories by employing five nuclear spins adjacent to a nitrogen-vacancy defect centre in diamond. We characterize the storage of quantum superpositions and their resilience to entangling attempts with the electron spin of the defect centre. The storage fidelity is found to be limited by the probabilistic electron spin reset after failed entangling attempts. Control over multiple memories is then utilized to encode states in decoherence protected subspaces with increased robustness. Furthermore we demonstrate memory control in two optically linked network nodes and characterize the storage capabilities of both memories in terms of the process fidelity with the identity. These results pave the way towards multi-qubit quantum algorithms in a remote network setting.

Coherent Spin Control at the Quantum Level in an Ensemble-Based Optical Memory.

PubMed

Jobez, Pierre; Laplane, Cyril; Timoney, Nuala; Gisin, Nicolas; Ferrier, Alban; Goldner, Philippe; Afzelius, Mikael

2015-06-12

Long-lived quantum memories are essential components of a long-standing goal of remote distribution of entanglement in quantum networks. These can be realized by storing the quantum states of light as single-spin excitations in atomic ensembles. However, spin states are often subjected to different dephasing processes that limit the storage time, which in principle could be overcome using spin-echo techniques. Theoretical studies suggest this to be challenging due to unavoidable spontaneous emission noise in ensemble-based quantum memories. Here, we demonstrate spin-echo manipulation of a mean spin excitation of 1 in a large solid-state ensemble, generated through storage of a weak optical pulse. After a storage time of about 1 ms we optically read-out the spin excitation with a high signal-to-noise ratio. Our results pave the way for long-duration optical quantum storage using spin-echo techniques for any ensemble-based memory.

Microscopic origin of resistance drift in the amorphous state of the phase-change compound GeTe

NASA Astrophysics Data System (ADS)

Gabardi, S.; Caravati, S.; Sosso, G. C.; Behler, J.; Bernasconi, M.

2015-08-01

Aging is a common feature of the glassy state. In the case of phase-change chalcogenide alloys the aging of the amorphous state is responsible for an increase of the electrical resistance with time. This phenomenon called drift is detrimental in the application of these materials in phase-change nonvolatile memories, which are emerging as promising candidates for storage class memories. By means of combined molecular dynamics and electronic structure calculations based on density functional theory, we have unraveled the atomistic origin of the resistance drift in the prototypical phase-change compound GeTe. The drift results from a widening of the band gap and a reduction of Urbach tails due to structural relaxations leading to the removal of chains of Ge-Ge homopolar bonds. The same structural features are actually responsible for the high mobility above the glass transition which boosts the crystallization speed exploited in the device.

Immunological memory is associative

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, D.J.; Forrest, S.; Perelson, A.S.

1996-12-31

The purpose of this paper is to show that immunological memory is an associative and robust memory that belongs to the class of sparse distributed memories. This class of memories derives its associative and robust nature by sparsely sampling the input space and distributing the data among many independent agents. Other members of this class include a model of the cerebellar cortex and Sparse Distributed Memory (SDM). First we present a simplified account of the immune response and immunological memory. Next we present SDM, and then we show the correlations between immunological memory and SDM. Finally, we show how associativemore » recall in the immune response can be both beneficial and detrimental to the fitness of an individual.« less

An Array Processing Theory of Memory, Thought, and Behavior Patterning: A Radically Reconstructive View.

ERIC Educational Resources Information Center

Allison, Dennis J.

A theory of memory is introduced, which seeks to respond to the shortcomings of existing theories based on metaphors. Memory is presented as a mechanism, a comparison process in which information held in some form of immediate storage (whether based on perception or previous cognition or both) is compared to previously stored long-term storage.…

Neural Plasticity and Memory: Is Memory Encoded in Hydrogen Bonding Patterns?

PubMed

Amtul, Zareen; Rahman, Atta-Ur

2016-02-01

Current models of memory storage recognize posttranslational modification vital for short-term and mRNA translation for long-lasting information storage. However, at the molecular level things are quite vague. A comprehensive review of the molecular basis of short and long-lasting synaptic plasticity literature leads us to propose that the hydrogen bonding pattern at the molecular level may be a permissive, vital step of memory storage. Therefore, we propose that the pattern of hydrogen bonding network of biomolecules (glycoproteins and/or DNA template, for instance) at the synapse is the critical edifying mechanism essential for short- and long-term memories. A novel aspect of this model is that nonrandom impulsive (or unplanned) synaptic activity functions as a synchronized positive-feedback rehearsal mechanism by revising the configurations of the hydrogen bonding network by tweaking the earlier tailored hydrogen bonds. This process may also maintain the elasticity of the related synapses involved in memory storage, a characteristic needed for such networks to alter intricacy and revise endlessly. The primary purpose of this review is to stimulate the efforts to elaborate the mechanism of neuronal connectivity both at molecular and chemical levels. © The Author(s) 2014.

The role of reduced working memory storage and processing resources in the associative memory deficit of older adults: simulation studies with younger adults.

PubMed

Hara, Yoko; Naveh-Benjamin, Moshe

2015-01-01

Previous research indicates that relative to younger adults, older adults show a larger decline in long-term memory (LTM) for associations than for the components that make up these associations. The purpose of the present study was to investigate whether we can impair associative memory performance in young adults by reducing their working memory (WM) resources, hence providing potential clues regarding the underlying causes of the associative memory deficit in older adults. With two experiments, we investigated whether we can reduce younger adults' long-term associative memory using secondary tasks in which either storage or processing WM loads were manipulated, while participants learned name-face pairs and then remembered the names, the faces, and the name-face associations. Results show that reducing either the storage or the processing resources of WM produced performance patterns of an associative long-term memory deficit in young adults. Furthermore, younger adults' associative memory deficit was a function of their performance on a working memory span task. These results indicate that one potential reason older adults have an associative deficit is a reduction in their WM resources but further research is needed to assess the mechanisms involved in age-related associative memory deficits.

Neural network based feed-forward high density associative memory

NASA Technical Reports Server (NTRS)

Daud, T.; Moopenn, A.; Lamb, J. L.; Ramesham, R.; Thakoor, A. P.

1987-01-01

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Upgrading the sleeping brain with targeted memory reactivation.

PubMed

Oudiette, Delphine; Paller, Ken A

2013-03-01

A fundamental feature of human memory is the propensity for beneficial changes in information storage after initial encoding. Recent research findings favor the possibility that memory consolidation during sleep is instrumental for actively maintaining the storehouse of memories that individuals carry through their lives. The information that ultimately remains available for retrieval may tend to be that which is reactivated during sleep. A novel source of support for this idea comes from demonstrations that neurocognitive processing during sleep can benefit memory storage when memories are covertly cued via auditory or olfactory stimulation. Investigations of these subtle manipulations of memory processing during sleep can help elucidate the mechanisms of memory preservation in the human brain. Copyright © 2013 Elsevier Ltd. All rights reserved.

40 CFR 144.22 - Existing Class II enhanced recovery and hydrocarbon storage wells.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells. 144.22 Section 144.22 Protection of Environment ENVIRONMENTAL... of Underground Injection by Rule § 144.22 Existing Class II enhanced recovery and hydrocarbon storage wells. (a) An existing Class II enhanced recovery or hydrocarbon storage injection well is authorized by...

40 CFR 144.22 - Existing Class II enhanced recovery and hydrocarbon storage wells.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells. 144.22 Section 144.22 Protection of Environment ENVIRONMENTAL... of Underground Injection by Rule § 144.22 Existing Class II enhanced recovery and hydrocarbon storage wells. (a) An existing Class II enhanced recovery or hydrocarbon storage injection well is authorized by...

Working Memory in Children with Cochlear Implants: Problems are in Storage, not Processing

PubMed Central

Nittrouer, Susan; Caldwell-Tarr, Amanda; Lowenstein, Joanna H

2013-01-01

Background There is growing consensus that hearing loss and consequent amplification likely interact with cognitive systems. A phenomenon often examined in regards to these potential interactions is working memory, modeled as consisting of one component responsible for storage of information and another component responsible for processing of that information. Signal degradation associated with cochlear implants should selectively inhibit storage without affecting processing. This study examined two hypotheses: (1) A single task can be used to measure storage and processing in working memory, with recall accuracy indexing storage and rate of recall indexing processing; (2) Storage is negatively impacted for children with CIs, but not processing. Method Two experiments were conducted. Experiment 1 included adults and children, 8 and 6 years of age, with NH. Procedures tested the prediction that accuracy of recall could index storage and rate of recall could index processing. Both measures were obtained during a serial-recall task using word lists designed to manipulate storage and processing demands independently: non-rhyming nouns were the standard condition; rhyming nouns were predicted to diminish storage capacity; and non-rhyming adjectives were predicted to increase processing load. Experiment 2 included 98 8-year-olds, 48 with NH and 50 with CIs, in the same serial-recall task using the non-rhyming and rhyming nouns. Results Experiment 1 showed that recall accuracy was poorest for the rhyming nouns and rate of recall was slowest for the non-rhyming adjectives, demonstrating that storage and processing can be indexed separately within a single task. In Experiment 2, children with CIs showed less accurate recall of serial order than children with NH, but rate of recall did not differ. Recall accuracy and rate of recall were not correlated in either experiment, reflecting independence of these mechanisms. Conclusions It is possible to measure the operations of storage and processing mechanisms in working memory in a single task, and only storage is impaired for children with CIs. These findings suggest that research and clinical efforts should focus on enhancing the saliency of representation for children with CIs. Direct instruction of syntax and semantics could facilitate storage in real-world working memory tasks. PMID:24090697

Working memory in children with cochlear implants: problems are in storage, not processing.

PubMed

Nittrouer, Susan; Caldwell-Tarr, Amanda; Lowenstein, Joanna H

2013-11-01

There is growing consensus that hearing loss and consequent amplification likely interact with cognitive systems. A phenomenon often examined in regards to these potential interactions is working memory, modeled as consisting of one component responsible for storage of information and another component responsible for processing of that information. Signal degradation associated with cochlear implants should selectively inhibit storage without affecting processing. This study examined two hypotheses: (1) A single task can be used to measure storage and processing in working memory, with recall accuracy indexing storage and rate of recall indexing processing; (2) Storage is negatively impacted for children with CIs, but not processing. Two experiments were conducted. Experiment 1 included adults and children, 8 and 6 years of age, with NH. Procedures tested the prediction that accuracy of recall could index storage and rate of recall could index processing. Both measures were obtained during a serial-recall task using word lists designed to manipulate storage and processing demands independently: non-rhyming nouns were the standard condition; rhyming nouns were predicted to diminish storage capacity; and non-rhyming adjectives were predicted to increase processing load. Experiment 2 included 98 8-year-olds, 48 with NH and 50 with CIs, in the same serial-recall task using the non-rhyming and rhyming nouns. Experiment 1 showed that recall accuracy was poorest for the rhyming nouns and rate of recall was slowest for the non-rhyming adjectives, demonstrating that storage and processing can be indexed separately within a single task. In Experiment 2, children with CIs showed less accurate recall of serial order than children with NH, but rate of recall did not differ. Recall accuracy and rate of recall were not correlated in either experiment, reflecting independence of these mechanisms. It is possible to measure the operations of storage and processing mechanisms in working memory in a single task, and only storage is impaired for children with CIs. These findings suggest that research and clinical efforts should focus on enhancing the saliency of representation for children with CIs. Direct instruction of syntax and semantics could facilitate storage in real-world working memory tasks. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Tracking the fear engram: the lateral amygdala is an essential locus of fear memory storage.

PubMed

Schafe, Glenn E; Doyère, Valérie; LeDoux, Joseph E

2005-10-26

Although it is believed that different types of memories are localized in discreet regions of the brain, concrete experimental evidence of the existence of such engrams is often elusive. Despite being one of the best characterized memory systems of the brain, the question of where fear memories are localized in the brain remains a hotly debated issue. Here, we combine site-specific behavioral pharmacology with multisite electrophysiological recording techniques to show that the lateral nucleus of the amygdala, long thought to be critical for the acquisition of fear memories, is also an essential locus of fear memory storage.

The epigenetic basis of memory formation and storage.

PubMed

Jarome, Timothy J; Thomas, Jasmyne S; Lubin, Farah D

2014-01-01

The formation of long-term memory requires a series of cellular and molecular changes that involve transcriptional regulation of gene expression. While these changes in gene transcription were initially thought to be largely regulated by the activation of transcription factors by intracellular signaling molecules, epigenetic mechanisms have emerged as an important regulator of transcriptional processes across multiple brain regions to form a memory circuit for a learned event or experience. Due to their self-perpetuating nature and ability to bidirectionally control gene expression, these epigenetic mechanisms have the potential to not only regulate initial memory formation but also modify and update memory over time. This chapter focuses on the established, but poorly understood, role for epigenetic mechanisms such as posttranslational modifications of histone proteins and DNA methylation at the different stages of memory storage. Additionally, this chapter emphasizes how these mechanisms interact to control the ideal epigenetic environment for memory formation and modification in neurons. The reader will gain insights into the limitations in our current understanding of epigenetic regulation of memory storage, especially in terms of their cell-type specificity and the lack of understanding in the interactions of various epigenetic modifiers to one another to impact gene expression changes during memory formation.

High-performance Raman memory with spatio-temporal reversal

NASA Astrophysics Data System (ADS)

Vernaz-Gris, Pierre; Tranter, Aaron D.; Everett, Jesse L.; Leung, Anthony C.; Paul, Karun V.; Campbell, Geoff T.; Lam, Ping Koy; Buchler, Ben C.

2018-05-01

A number of techniques exist to use an ensemble of atoms as a quantum memory for light. Many of these propose to use backward retrieval as a way to improve the storage and recall efficiency. We report on a demonstration of an off-resonant Raman memory that uses backward retrieval to achieve an efficiency of $65\\pm6\\%$ at a storage time of one pulse duration. The memory has a characteristic decay time of 60 $\\mu$s, corresponding to a delay-bandwidth product of $160$.

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd E

2014-02-18

Persistent data storage is provided by a method that includes receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

Working memory and flexibility in awareness and attention.

PubMed

Bunting, Michael F; Cowan, Nelson

2005-06-01

We argue that attention and awareness form the basis of one type of working-memory storage. In contrast to models of working memory in which storage and retrieval occur effortlessly, we document that an attention-demanding goal conflict within a retrieval cue impairs recall from working memory. In a conceptual span task, semantic and color-name cues prompted recall of four consecutive words from a twelve-word list. The first-four, middle-four, and final-four words belonged to different semantic categories (e.g., body parts, animals, and tools) and were shown in different colors (e.g., red, blue, and green). In Experiment 1, the color of the cue matched that of cued items 75% of the time, and the rare mismatch impaired recall. In Experiment 2, though, the color of the cue matched that of the cued items only 25% of the time, and the now-more-frequent mismatches no longer mattered. These results are difficult to explain with passive storage alone and indicate that a processing difficulty impedes recall from working memory, presumably by distracting attention away from its storage function.

Visual working memory buffers information retrieved from visual long-term memory.

PubMed

Fukuda, Keisuke; Woodman, Geoffrey F

2017-05-16

Human memory is thought to consist of long-term storage and short-term storage mechanisms, the latter known as working memory. Although it has long been assumed that information retrieved from long-term memory is represented in working memory, we lack neural evidence for this and need neural measures that allow us to watch this retrieval into working memory unfold with high temporal resolution. Here, we show that human electrophysiology can be used to track information as it is brought back into working memory during retrieval from long-term memory. Specifically, we found that the retrieval of information from long-term memory was limited to just a few simple objects' worth of information at once, and elicited a pattern of neurophysiological activity similar to that observed when people encode new information into working memory. Our findings suggest that working memory is where information is buffered when being retrieved from long-term memory and reconcile current theories of memory retrieval with classic notions about the memory mechanisms involved.

Visual working memory buffers information retrieved from visual long-term memory

PubMed Central

Fukuda, Keisuke; Woodman, Geoffrey F.

2017-01-01

Human memory is thought to consist of long-term storage and short-term storage mechanisms, the latter known as working memory. Although it has long been assumed that information retrieved from long-term memory is represented in working memory, we lack neural evidence for this and need neural measures that allow us to watch this retrieval into working memory unfold with high temporal resolution. Here, we show that human electrophysiology can be used to track information as it is brought back into working memory during retrieval from long-term memory. Specifically, we found that the retrieval of information from long-term memory was limited to just a few simple objects’ worth of information at once, and elicited a pattern of neurophysiological activity similar to that observed when people encode new information into working memory. Our findings suggest that working memory is where information is buffered when being retrieved from long-term memory and reconcile current theories of memory retrieval with classic notions about the memory mechanisms involved. PMID:28461479

Nonvolatile semiconductor memory having three dimension charge confinement

DOEpatents

Dawson, L. Ralph; Osbourn, Gordon C.; Peercy, Paul S.; Weaver, Harry T.; Zipperian, Thomas E.

1991-01-01

A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

Self-consistent signal-to-noise analysis of the statistical behavior of analog neural networks and enhancement of the storage capacity

NASA Astrophysics Data System (ADS)

Shiino, Masatoshi; Fukai, Tomoki

1993-08-01

Based on the self-consistent signal-to-noise analysis (SCSNA) capable of dealing with analog neural networks with a wide class of transfer functions, enhancement of the storage capacity of associative memory and the related statistical properties of neural networks are studied for random memory patterns. Two types of transfer functions with the threshold parameter θ are considered, which are derived from the sigmoidal one to represent the output of three-state neurons. Neural networks having a monotonically increasing transfer function FM, FM(u)=sgnu (||u||>θ), FM(u)=0 (||u||<=θ), are shown to make it impossible for the spin-glass state to coexist with retrieval states in a certain parameter region of θ and α (loading rate of memory patterns), implying the reduction of the number of spurious states. The behavior of the storage capacity with changing θ is qualitatively the same as that of the Ising spin neural networks with varying temperature. On the other hand, the nonmonotonic transfer function FNM, FNM(u)=sgnu (||u||<θ), FNM(u)=0 (||u||>=θ) gives rise to remarkable features in several respects. First, it yields a large enhancement of the storage capacity compared with the Amit-Gutfreund-Sompolinsky (AGS) value: with decreasing θ from θ=∞, the storage capacity αc of such a network is increased from the AGS value (~=0.14) to attain its maximum value of ~=0.42 at θ~=0.7 and afterwards is decreased to vanish at θ=0. Whereas for θ>~1 the storage capacity αc coincides with the value αc~ determined by the SCSNA as the upper bound of α ensuring the existence of retrieval solutions, for θ<~1 the αc is shown to differ from the αc~ with the result that the retrieval solutions claimed by the SCSNA are unstable for αc<α<αc~. Second, in the case of θ<1 the network can exhibit a new type of phase which appears as a result of a phase transition with respect to the non-Gaussian distribution of the local fields of neurons: the standard type of retrieval state with r≠0 (i.e., finite width of the local field distribution), which is implied by the order-parameter equations of the SCSNA, disappears at a certain critical loading rate α0, and for α<=α0 a qualitatively different type of retrieval state comes into existence in which the width of the local field distribution vanishes (i.e., r=0+). As a consequence, memory retrieval without errors becomes possible even in the saturation limit α≠0. Results of the computer simulations on the statistical properties of the novel phase with α<=α0 are shown to be in satisfactory agreement with the theoretical results. The effect of introducing self-couplings on the storage capacity is also analyzed for the two types of networks. It is conspicuous for the networks with FNM, where the self-couplings increase the stability of the retrieval solutions of the SCSNA with small values of θ, leading to a remarkable enhancement of the storage capacity.

Multibit data storage states formed in plasma-treated MoS₂ transistors.

PubMed

Chen, Mikai; Nam, Hongsuk; Wi, Sungjin; Priessnitz, Greg; Gunawan, Ivan Manuel; Liang, Xiaogan

2014-04-22

New multibit memory devices are desirable for improving data storage density and computing speed. Here, we report that multilayer MoS2 transistors, when treated with plasmas, can dramatically serve as low-cost, nonvolatile, highly durable memories with binary and multibit data storage capability. We have demonstrated binary and 2-bit/transistor (or 4-level) data states suitable for year-scale data storage applications as well as 3-bit/transistor (or 8-level) data states for day-scale data storage. This multibit memory capability is hypothesized to be attributed to plasma-induced doping and ripple of the top MoS2 layers in a transistor, which could form an ambipolar charge-trapping layer interfacing the underlying MoS2 channel. This structure could enable the nonvolatile retention of charged carriers as well as the reversible modulation of polarity and amount of the trapped charge, ultimately resulting in multilevel data states in memory transistors. Our Kelvin force microscopy results strongly support this hypothesis. In addition, our research suggests that the programming speed of such memories can be improved by using nanoscale-area plasma treatment. We anticipate that this work would provide important scientific insights for leveraging the unique structural property of atomically layered two-dimensional materials in nanoelectronic applications.

Multi-port, optically addressed RAM

NASA Technical Reports Server (NTRS)

Johnston, Alan R. (Inventor); Nixon, Robert H. (Inventor); Bergman, Larry A. (Inventor); Esener, Sadik (Inventor)

1989-01-01

A random access memory addressing system utilizing optical links between memory and the read/write logic circuits comprises addressing circuits including a plurality of light signal sources, a plurality of optical gates including optical detectors associated with the memory cells, and a holographic optical element adapted to reflect and direct the light signals to the desired memory cell locations. More particularly, it is a multi-port, binary computer memory for interfacing with a plurality of computers. There are a plurality of storage cells for containing bits of binary information, the storage cells being disposed at the intersections of a plurality of row conductors and a plurality of column conductors. There is interfacing logic for receiving information from the computers directing access to ones of the storage cells. There are first light sources associated with the interfacing logic for transmitting a first light beam with the access information modulated thereon. First light detectors are associated with the storage cells for receiving the first light beam, for generating an electrical signal containing the access information, and for conducting the electrical signal to the one of the storage cells to which it is directed. There are holographic optical elements for reflecting the first light beam from the first light sources to the first light detectors.

Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric

NASA Astrophysics Data System (ADS)

Chen, Ying-Chih; Su, Yan-Kuin; Yu, Hsin-Chieh; Huang, Chun-Yuan; Huang, Tsung-Syun

2011-10-01

A wide hysteresis width characteristic (memory window) was observed in the organic thin film transistors (OTFTs) using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer multilayers. In this study, a strong memory effect was also found in the pentacene-based OTFTs and the electric characteristics were improved by introducing PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA trilayer to replace the conventional PHEMA monolayer or PMMA/PHEMA and PHEMA/PMMA bilayer as the dielectric layers of OTFTs. The memory effect was originated from the electron trapping and slow polarization of the dielectrics. The hydroxyl (-OH) groups inside the polymer dielectric were the main charge storage sites of the electrons. This charge-storage phenomenon could lead to a wide flat-band voltage shift (memory window, △VFB = 22 V) which is essential for the OTFTs' memory-related applications. Moreover, the fabricated transistors also exhibited significant switchable channel current due to the charge-storage and slow charge relaxation.

Feasibility study of molecular memory device based on DNA using methylation to store information

NASA Astrophysics Data System (ADS)

Jiang, Liming; Qiu, Wanzhi; Al-Dirini, Feras; Hossain, Faruque M.; Evans, Robin; Skafidas, Efstratios

2016-07-01

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

Clinical correlates of working memory deficits in youth with and without ADHD: A controlled study.

PubMed

Fried, Ronna; Chan, James; Feinberg, Leah; Pope, Amanda; Woodworth, K Yvonne; Faraone, Stephen V; Biederman, Joseph

2016-01-01

Both working memory (WM; a brain system that provides temporary storage and manipulation of the information) and attention-deficit/hyperactivity disorder (ADHD) have been associated with educational deficits. Since WM deficits are prevalent in children with ADHD, the main aim of the present study was to examine whether educational deficits are driven by working memory deficits or driven by the effect of ADHD itself. Participants were referred youth with (N = 276) and without (N = 241) ADHD ascertained from pediatric and psychiatric sources. Assessment included measures of psychiatric, psychosocial, educational, and cognitive functioning. Education deficits were defined as grade retention or placement in special classes and were assessed using interviews and written rating scales. Working memory was assessed using the Wechsler Intelligence Scale for Children-Revised (WISC-R) Freedom from Distractibility (FFD) factor based on Digit Span, Arithmetic, and Coding. Significantly more youth with ADHD had WM deficits than controls (31.9% vs. 13.7%, p < .05). In ADHD children, WM deficits were significantly (p < .01) associated with an increased risk for grade retention and placement in special classes as well as lower scores on reading and math achievement tests than for ADHD children without WM deficits. In contrast, no other differences were noted in other areas of functioning. Although WM deficits also had some adverse impact on educational and cognitive correlates in non-ADHD controls, these differences failed to attain statistical significance. WM deficits significantly and selectively increase the risk for academic deficits and cognitive dysfunction in children with ADHD beyond those conferred by ADHD. Screening for WM deficits may help identify children with ADHD at high risk for academic and cognitive dysfunction.

Clinical Correlates of Working Memory Deficits in Youth With and Without ADHD: A Controlled Study

PubMed Central

Fried, Ronna; Chan, James; Feinberg, Leah; Pope, Amanda; Woodworth, K. Yvonne; Faraone, Stephen V.; Biederman, Joseph

2016-01-01

Objective Both working memory (WM) (a brain system that provides temporary storage and manipulation of the information) and attention-deficit/hyperactivity disorder (ADHD) have been associated with educational deficits. Since WM deficits are prevalent in children with ADHD, the main aim of the present study was to examine whether educational deficits are driven by working memory deficits or driven by the effect of ADHD itself. Method Participants were referred youth with (N=276) and without (N=241) ADHD ascertained from pediatric and psychiatric sources. Assessment included measures of psychiatric, psychosocial, educational, and cognitive functioning. Education deficits were defined as grade retention or placement in special classes, and were assessed using interviews and written rating scales. Working memory was assessed using the WISC-R Freedom from Distractibility (FFD) factor based on digit span, arithmetic and coding. Results Significantly more youth with ADHD had WM deficits than controls (31.9% vs. 13.7%, p< 0.05). In ADHD children, WM deficits were significantly (p<0.01) associated with an increased risk for grade retention and placement in special classes as well as lower scores on reading and math achievement tests, relative to ADHD children without WM deficits. In contrast, no other differences were noted in other areas of functioning. Although WM deficits also had some adverse impact on educational and cognitive correlates in non ADHD controls, these differences failed to attain statistical significance. Conclusion WM deficits significantly and selectively increase the risk for academic deficits and cognitive dysfunction in children with ADHD beyond those conferred by ADHD. Screening for WM deficits may help identify children with ADHD at high risk for academic and cognitive dysfunction. PMID:26902180

Active holographic interconnects for interfacing volume storage

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Schwartz, Jay R.; Nelson, Arthur R.; Levin, Philip S.

1992-04-01

In order to achieve the promise of terabit/cm3 data storage capacity for volume holographic optical memory, two technological challenges must be met. Satisfactory storage materials must be developed and the input/output architectures able to match their capacity with corresponding data access rates must also be designed. To date the materials problem has received more attention than devices and architectures for access and addressing. Two philosophies of parallel data access to 3-D storage have been discussed. The bit-oriented approach, represented by recent work on two-photon memories, attempts to store bits at local sites within a volume without affecting neighboring bits. High speed acousto-optic or electro- optic scanners together with dynamically focused lenses not presently available would be required. The second philosophy is that volume optical storage is essentially holographic in nature, and that each data write or read is to be distributed throughout the material volume on the basis of angle multiplexing or other schemes consistent with the principles of holography. The requirements for free space optical interconnects for digital computers and fiber optic network switching interfaces are also closely related to this class of devices. Interconnects, beamlet generators, angle multiplexers, scanners, fiber optic switches, and dynamic lenses are all devices which may be implemented by holographic or microdiffractive devices of various kinds, which we shall refer to collectively as holographic interconnect devices. At present, holographic interconnect devices are either fixed holograms or spatial light modulators. Optically or computer generated holograms (submicron resolution, 2-D or 3-D, encoding 1013 bits, nearly 100 diffraction efficiency) can implement sophisticated mathematical design principles, but of course once fabricated they cannot be changed. Spatial light modulators offer high speed programmability but have limited resolution (512 X 512 pixels, encoding about 106 bits of data) and limited diffraction efficiency. For any application, one must choose between high diffractive performance and programmability.

Working memory and fluid intelligence: capacity, attention control, and secondary memory retrieval.

PubMed

Unsworth, Nash; Fukuda, Keisuke; Awh, Edward; Vogel, Edward K

2014-06-01

Several theories have been put forth to explain the relation between working memory (WM) and gF. Unfortunately, no single factor has been shown to fully account for the relation between these two important constructs. In the current study we tested whether multiple factors (capacity, attention control, and secondary memory) would collectively account for the relation. A large number of participants performed multiple measures of each construct and latent variable analyses were used to examine the data. The results demonstrated that capacity, attention control, and secondary memory were uniquely related to WM storage, WM processing, and gF. Importantly, the three factors completely accounted for the relation between WM (both processing and storage) and gF. Thus, although storage and processing make independent contributions to gF, both of these contributions are accounted for by variation in capacity, attention control and secondary memory. These results are consistent with the multifaceted view of WM, suggesting that individual differences in capacity, attention control, and secondary memory jointly account for individual differences in WM and its relation with gF. Copyright © 2014 Elsevier Inc. All rights reserved.

Working Memory and Fluid Intelligence: Capacity, Attention Control, and Secondary Memory Retrieval

PubMed Central

Unsworth, Nash; Fukuda, Keisuke; Awh, Edward; Vogel, Edward K.

2015-01-01

Several theories have been put forth to explain the relation between working memory (WM) and gF. Unfortunately, no single factor has been shown to fully account for the relation between these two important constructs. In the current study we tested whether multiple factors (capacity, attention control, and secondary memory) would collectively account for the relation. A large number of participants performed multiple measures of each construct and latent variable analyses were used to examine the data. The results demonstrated that capacity, attention control, and secondary memory were uniquely related to WM storage, WM processing, and gF. Importantly, the three factors completely accounted for the relation between WM (both processing and storage) and gF. Thus, although storage and processing make independent contributions to gF, both of these contributions are accounted for by variation in capacity, attention control and secondary memory. These results are consistent with the multifaceted view of WM, suggesting that individual differences in capacity, attention control, and secondary memory jointly account for individual differences in WM and its relation with gF. PMID:24531497

Pseudo-orthogonalization of memory patterns for associative memory.

PubMed

Oku, Makito; Makino, Takaki; Aihara, Kazuyuki

2013-11-01

A new method for improving the storage capacity of associative memory models on a neural network is proposed. The storage capacity of the network increases in proportion to the network size in the case of random patterns, but, in general, the capacity suffers from correlation among memory patterns. Numerous solutions to this problem have been proposed so far, but their high computational cost limits their scalability. In this paper, we propose a novel and simple solution that is locally computable without any iteration. Our method involves XNOR masking of the original memory patterns with random patterns, and the masked patterns and masks are concatenated. The resulting decorrelated patterns allow higher storage capacity at the cost of the pattern length. Furthermore, the increase in the pattern length can be reduced through blockwise masking, which results in a small amount of capacity loss. Movie replay and image recognition are presented as examples to demonstrate the scalability of the proposed method.

Method and device for maximizing memory system bandwidth by accessing data in a dynamically determined order

NASA Technical Reports Server (NTRS)

Schwab, Andrew J. (Inventor); Aylor, James (Inventor); Hitchcock, Charles Young (Inventor); Wulf, William A. (Inventor); McKee, Sally A. (Inventor); Moyer, Stephen A. (Inventor); Klenke, Robert (Inventor)

2000-01-01

A data processing system is disclosed which comprises a data processor and memory control device for controlling the access of information from the memory. The memory control device includes temporary storage and decision ability for determining what order to execute the memory accesses. The compiler detects the requirements of the data processor and selects the data to stream to the memory control device which determines a memory access order. The order in which to access said information is selected based on the location of information stored in the memory. The information is repeatedly accessed from memory and stored in the temporary storage until all streamed information is accessed. The information is stored until required by the data processor. The selection of the order in which to access information maximizes bandwidth and decreases the retrieval time.

Proactive Interference Does Not Meaningfully Distort Visual Working Memory Capacity Estimates in the Canonical Change Detection Task

PubMed Central

Lin, Po-Han; Luck, Steven J.

2012-01-01

The change detection task has become a standard method for estimating the storage capacity of visual working memory. Most researchers assume that this task isolates the properties of an active short-term storage system that can be dissociated from long-term memory systems. However, long-term memory storage may influence performance on this task. In particular, memory traces from previous trials may create proactive interference that sometimes leads to errors, thereby reducing estimated capacity. Consequently, the capacity of visual working memory may be higher than is usually thought, and correlations between capacity and other measures of cognition may reflect individual differences in proactive interference rather than individual differences in the capacity of the short-term storage system. Indeed, previous research has shown that change detection performance can be influenced by proactive interference under some conditions. The purpose of the present study was to determine whether the canonical version of the change detection task – in which the to-be-remembered information consists of simple, briefly presented features – is influenced by proactive interference. Two experiments were conducted using methods that ordinarily produce substantial evidence of proactive interference, but no proactive interference was observed. Thus, the canonical version of the change detection task can be used to assess visual working memory capacity with no meaningful influence of proactive interference. PMID:22403556

Proactive interference does not meaningfully distort visual working memory capacity estimates in the canonical change detection task.

PubMed

Lin, Po-Han; Luck, Steven J

2012-01-01

The change detection task has become a standard method for estimating the storage capacity of visual working memory. Most researchers assume that this task isolates the properties of an active short-term storage system that can be dissociated from long-term memory systems. However, long-term memory storage may influence performance on this task. In particular, memory traces from previous trials may create proactive interference that sometimes leads to errors, thereby reducing estimated capacity. Consequently, the capacity of visual working memory may be higher than is usually thought, and correlations between capacity and other measures of cognition may reflect individual differences in proactive interference rather than individual differences in the capacity of the short-term storage system. Indeed, previous research has shown that change detection performance can be influenced by proactive interference under some conditions. The purpose of the present study was to determine whether the canonical version of the change detection task - in which the to-be-remembered information consists of simple, briefly presented features - is influenced by proactive interference. Two experiments were conducted using methods that ordinarily produce substantial evidence of proactive interference, but no proactive interference was observed. Thus, the canonical version of the change detection task can be used to assess visual working memory capacity with no meaningful influence of proactive interference.

Optical storage with electromagnetically induced transparency in cold atoms at a high optical depth

NASA Astrophysics Data System (ADS)

Zhang, Shanchao; Zhou, Shuyu; Liu, Chang; Chen, J. F.; Wen, Jianming; Loy, M. M. T.; Wong, G. K. L.; Du, Shengwang

2012-06-01

We report experimental demonstration of efficient optical storage with electromagnetically induced transparency (EIT) in a dense cold ^85Rb atomic ensemble trapped in a two-dimensional magneto-optical trap. By varying the optical depth (OD) from 0 to 140, we observe that the optimal storage efficiency for coherent optical pulses has a saturation value of 50% as OD > 50. Our result is consistent with that obtained from hot vapor cell experiments which suggest that a four-wave mixing nonlinear process degrades the EIT storage coherence and efficiency. We apply this EIT quantum memory for narrow-band single photons with controllable waveforms, and obtain an optimal storage efficiency of 49±3% for single-photon wave packets. This is the highest single-photon storage efficiency reported up to today and brings the EIT atomic quantum memory close to practical application because an efficiency of above 50% is necessary to operate the memory within non-cloning regime and beat the classical limit.

40 CFR 144.21 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells.

Code of Federal Regulations, 2011 CFR

2011-07-01

... recovery and hydrocarbon storage) and III wells. 144.21 Section 144.21 Protection of Environment... hydrocarbon storage) and III wells. (a) An existing Class I, II (except enhanced recovery and hydrocarbon... decision; or (9) For Class II wells (except enhanced recovery and hydrocarbon storage), five years after...

40 CFR 144.21 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells.

Code of Federal Regulations, 2010 CFR

2010-07-01

... recovery and hydrocarbon storage) and III wells. 144.21 Section 144.21 Protection of Environment... hydrocarbon storage) and III wells. (a) An existing Class I, II (except enhanced recovery and hydrocarbon... decision; or (9) For Class II wells (except enhanced recovery and hydrocarbon storage), five years after...

Coherent Optical Memory with High Storage Efficiency and Large Fractional Delay

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A.

2013-02-01

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Coherent optical memory with high storage efficiency and large fractional delay.

PubMed

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A

2013-02-22

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd

2014-11-04

Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

Non-volatile main memory management methods based on a file system.

PubMed

Oikawa, Shuichi

2014-01-01

There are upcoming non-volatile (NV) memory technologies that provide byte addressability and high performance. PCM, MRAM, and STT-RAM are such examples. Such NV memory can be used as storage because of its data persistency without power supply while it can be used as main memory because of its high performance that matches up with DRAM. There are a number of researches that investigated its uses for main memory and storage. They were, however, conducted independently. This paper presents the methods that enables the integration of the main memory and file system management for NV memory. Such integration makes NV memory simultaneously utilized as both main memory and storage. The presented methods use a file system as their basis for the NV memory management. We implemented the proposed methods in the Linux kernel, and performed the evaluation on the QEMU system emulator. The evaluation results show that 1) the proposed methods can perform comparably to the existing DRAM memory allocator and significantly better than the page swapping, 2) their performance is affected by the internal data structures of a file system, and 3) the data structures appropriate for traditional hard disk drives do not always work effectively for byte addressable NV memory. We also performed the evaluation of the effects caused by the longer access latency of NV memory by cycle-accurate full-system simulation. The results show that the effect on page allocation cost is limited if the increase of latency is moderate.

Multilevel resistive information storage and retrieval

DOEpatents

Lohn, Andrew; Mickel, Patrick R.

2016-08-09

The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.

A Layered Solution for Supercomputing Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grider, Gary

To solve the supercomputing challenge of memory keeping up with processing speed, a team at Los Alamos National Laboratory developed two innovative memory management and storage technologies. Burst buffers peel off data onto flash memory to support the checkpoint/restart paradigm of large simulations. MarFS adds a thin software layer enabling a new tier for campaign storage—based on inexpensive, failure-prone disk drives—between disk drives and tape archives.

MHC class I immune proteins are critical for hippocampus-dependent memory and gate NMDAR-dependent hippocampal long-term depression

PubMed Central

Nelson, P. Austin; Sage, Jennifer R.; Wood, Suzanne C.; Davenport, Christopher M.; Anagnostaras, Stephan G.; Boulanger, Lisa M.

2013-01-01

Memory impairment is a common feature of conditions that involve changes in inflammatory signaling in the brain, including traumatic brain injury, infection, neurodegenerative disorders, and normal aging. However, the causal importance of inflammatory mediators in cognitive impairments in these conditions remains unclear. Here we show that specific immune proteins, members of the major histocompatibility complex class I (MHC class I), are essential for normal hippocampus-dependent memory, and are specifically required for NMDAR-dependent forms of long-term depression (LTD) in the healthy adult hippocampus. In β2m−/−TAP−/−mice, which lack stable cell-surface expression of most MHC class I proteins, NMDAR-dependent LTD in area CA1 of adult hippocampus is abolished, while NMDAR-independent forms of potentiation, facilitation, and depression are unaffected. Altered NMDAR-dependent synaptic plasticity in the hippocampus of β2m−/−TAP−/−mice is accompanied by pervasive deficits in hippocampus-dependent memory, including contextual fear memory, object recognition memory, and social recognition memory. Thus normal MHC class I expression is essential for NMDAR-dependent hippocampal synaptic depression and hippocampus-dependent memory. These results suggest that changes in MHC class I expression could be an unexpected cause of disrupted synaptic plasticity and cognitive deficits in the aging, damaged, and diseased brain. PMID:23959708

The synaptic plasticity and memory hypothesis: encoding, storage and persistence

PubMed Central

Takeuchi, Tomonori; Duszkiewicz, Adrian J.; Morris, Richard G. M.

2014-01-01

The synaptic plasticity and memory hypothesis asserts that activity-dependent synaptic plasticity is induced at appropriate synapses during memory formation and is both necessary and sufficient for the encoding and trace storage of the type of memory mediated by the brain area in which it is observed. Criteria for establishing the necessity and sufficiency of such plasticity in mediating trace storage have been identified and are here reviewed in relation to new work using some of the diverse techniques of contemporary neuroscience. Evidence derived using optical imaging, molecular-genetic and optogenetic techniques in conjunction with appropriate behavioural analyses continues to offer support for the idea that changing the strength of connections between neurons is one of the major mechanisms by which engrams are stored in the brain. PMID:24298167

Feasibility study of current pulse induced 2-bit/4-state multilevel programming in phase-change memory

NASA Astrophysics Data System (ADS)

Liu, Yan; Fan, Xi; Chen, Houpeng; Wang, Yueqing; Liu, Bo; Song, Zhitang; Feng, Songlin

2017-08-01

In this brief, multilevel data storage for phase-change memory (PCM) has attracted more attention in the memory market to implement high capacity memory system and reduce cost-per-bit. In this work, we present a universal programing method of SET stair-case current pulse in PCM cells, which can exploit the optimum programing scheme to achieve 2-bit/ 4state resistance-level with equal logarithm interval. SET stair-case waveform can be optimized by TCAD real time simulation to realize multilevel data storage efficiently in an arbitrary phase change material. Experimental results from 1 k-bit PCM test-chip have validated the proposed multilevel programing scheme. This multilevel programming scheme has improved the information storage density, robustness of resistance-level, energy efficient and avoiding process complexity.

The storage system of PCM based on random access file system

NASA Astrophysics Data System (ADS)

Han, Wenbing; Chen, Xiaogang; Zhou, Mi; Li, Shunfen; Li, Gezi; Song, Zhitang

2016-10-01

Emerging memory technologies such as Phase change memory (PCM) tend to offer fast, random access to persistent storage with better scalability. It's a hot topic of academic and industrial research to establish PCM in storage hierarchy to narrow the performance gap. However, the existing file systems do not perform well with the emerging PCM storage, which access storage medium via a slow, block-based interface. In this paper, we propose a novel file system, RAFS, to bring about good performance of PCM, which is built in the embedded platform. We attach PCM chips to the memory bus and build RAFS on the physical address space. In the proposed file system, we simplify traditional system architecture to eliminate block-related operations and layers. Furthermore, we adopt memory mapping and bypassed page cache to reduce copy overhead between the process address space and storage device. XIP mechanisms are also supported in RAFS. To the best of our knowledge, we are among the first to implement file system on real PCM chips. We have analyzed and evaluated its performance with IOZONE benchmark tools. Our experimental results show that the RAFS on PCM outperforms Ext4fs on SDRAM with small record lengths. Based on DRAM, RAFS is significantly faster than Ext4fs by 18% to 250%.

Nanomaterials for Electronics and Optoelectronics

NASA Technical Reports Server (NTRS)

Koehne, Jessica E.; Meyyappan, M.

2011-01-01

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Memory for light as a quantum process.

PubMed

Lobino, M; Kupchak, C; Figueroa, E; Lvovsky, A I

2009-05-22

We report complete characterization of an optical memory based on electromagnetically induced transparency. We recover the superoperator associated with the memory, under two different working conditions, by means of a quantum process tomography technique that involves storage of coherent states and their characterization upon retrieval. In this way, we can predict the quantum state retrieved from the memory for any input, for example, the squeezed vacuum or the Fock state. We employ the acquired superoperator to verify the nonclassicality benchmark for the storage of a Gaussian distributed set of coherent states.

Research on Multi - Person Parallel Modeling Method Based on Integrated Model Persistent Storage

NASA Astrophysics Data System (ADS)

Qu, MingCheng; Wu, XiangHu; Tao, YongChao; Liu, Ying

2018-03-01

This paper mainly studies the multi-person parallel modeling method based on the integrated model persistence storage. The integrated model refers to a set of MDDT modeling graphics system, which can carry out multi-angle, multi-level and multi-stage description of aerospace general embedded software. Persistent storage refers to converting the data model in memory into a storage model and converting the storage model into a data model in memory, where the data model refers to the object model and the storage model is a binary stream. And multi-person parallel modeling refers to the need for multi-person collaboration, the role of separation, and even real-time remote synchronization modeling.

Light storage in a cold atomic ensemble with a high optical depth

NASA Astrophysics Data System (ADS)

Park, Kwang-Kyoon; Chough, Young-Tak; Kim, Yoon-Ho

2017-06-01

A quantum memory with a high storage efficiency and a long coherence time is an essential element in quantum information applications. Here, we report our recent development of an optical quantum memory with a rubidium-87 cold atom ensemble. By increasing the optical depth of the medium, we have achieved a storage efficiency of 65% and a coherence time of 51 μs for a weak laser pulse. The result of a numerical analysis based on the Maxwell-Bloch equations agrees well with the experimental results. Our result paves the way toward an efficient optical quantum memory and may find applications in photonic quantum information processing.

Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories.

PubMed

Chen, Xiaoli; Zhou, Ye; Roy, Vellaisamy A L; Han, Su-Ting

2018-01-01

Because of current fabrication limitations, miniaturizing nonvolatile memory devices for managing the explosive increase in big data is challenging. Molecular memories constitute a promising candidate for next-generation memories because their properties can be readily modulated through chemical synthesis. Moreover, these memories can be fabricated through mild solution processing, which can be easily scaled up. Among the various materials, polyoxometalate (POM) molecules have attracted considerable attention for use as novel data-storage nodes for nonvolatile memories. Here, an overview of recent advances in the development of POMs for nonvolatile memories is presented. The general background knowledge of the structure and property diversity of POMs is also summarized. Finally, the challenges and perspectives in the application of POMs in memories are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Application of phase-change materials in memory taxonomy.

PubMed

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories

NASA Astrophysics Data System (ADS)

Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.

2015-10-01

Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. Electronic supplementary information (ESI) available: Energy-dispersive X-ray spectroscopy (EDS) spectra of the metal NPs, SEM image of MoS2 on Au NPs, erasing operations of the metal NPs-MoS2 memory device, transfer characteristics of the standard FET devices and Ag NP devices under programming operation, tapping-mode AFM height image of the fabricated MoS2 film for pristine MoS2 flash memory, gate signals used for programming the Au NPs-MoS2 and Pt NPs-MoS2 flash memories, and data levels recorded for 100 sequential cycles. See DOI: 10.1039/c5nr05054e

Retrieval and Sleep Both Counteract the Forgetting of Spatial Information

ERIC Educational Resources Information Center

Antony, James W.; Paller, Ken A.

2018-01-01

Repeatedly studying information is a good way to strengthen memory storage. Nevertheless, testing recall often produces superior long-term retention. Demonstrations of this testing effect, typically with verbal stimuli, have shown that repeated retrieval through testing reduces forgetting. Sleep also benefits memory storage, perhaps through…

The role of inhibition for working memory processes: ERP evidence from a short-term storage task.

PubMed

Getzmann, Stephan; Wascher, Edmund; Schneider, Daniel

2018-05-01

Human working memory is the central unit for short-term storage of information. In addition to the selection and adequate storage of relevant information, the suppression of irrelevant stimuli from the environment seems to be of importance for working memory processes. To learn more about the interplay of information uptake and inhibition of irrelevant information, the present study used ERP measures and a short-term storage and retrieval task, in which pairs of either numbers or letters had to be compared. Random sequences of four stimuli (two numbers and two letters) were presented, with either the numbers or the letters being relevant for comparison. The analysis of ERPs to each of the four stimuli indicated more pronounced P2 and P3b amplitudes for relevant than irrelevant stimuli. In contrast, the N2 (reflecting inhibitory control) was only elicited by irrelevant stimuli. Moreover, the N2 amplitude of the second irrelevant stimulus was associated with behavioral performance, indicating the importance of inhibition of task-irrelevant stimuli for working memory processes. In sum, the findings demonstrate the role of cognitive control mechanisms for protecting relevant contents in working memory against irrelevant information. © 2017 Society for Psychophysiological Research.

Cognitive control components and speech symptoms in people with schizophrenia.

PubMed

Becker, Theresa M; Cicero, David C; Cowan, Nelson; Kerns, John G

2012-03-30

Previous schizophrenia research suggests poor cognitive control is associated with schizophrenia speech symptoms. However, cognitive control is a broad construct. Two important cognitive control components are poor goal maintenance and poor verbal working memory storage. In the current research, people with schizophrenia (n=45) performed three cognitive tasks that varied in their goal maintenance and verbal working memory storage demands. Speech symptoms were assessed using clinical rating scales, ratings of disorganized speech from typed transcripts, and self-reported disorganization. Overall, alogia was associated with both goal maintenance and verbal working memory tasks. Objectively rated disorganized speech was associated with poor goal maintenance and with a task that included both goal maintenance and verbal working memory storage demands. In contrast, self-reported disorganization was unrelated to either amount of objectively rated disorganized speech or to cognitive control task performance, instead being associated with negative mood symptoms. Overall, our results suggest that alogia is associated with both poor goal maintenance and poor verbal working memory storage and that disorganized speech is associated with poor goal maintenance. In addition, patients' own assessment of their disorganization is related to negative mood, but perhaps not to objective disorganized speech or to cognitive control task performance. Published by Elsevier Ireland Ltd.

Iconic Memory and Reading Performance in Nine-Year-Old Children

ERIC Educational Resources Information Center

Riding, R. J.; Pugh, J. C.

1977-01-01

The reading process incorporates three factors: images registered in visual sensory memory, semantic analysis in short-term memory, and long-term memory storage. The focus here is on the contribution of sensory memory to reading performance. (Author/RK)

Nicotine Modulates the Long-Lasting Storage of Fear Memory

ERIC Educational Resources Information Center

Lima, Ramon H.; Radiske, Andressa; Kohler, Cristiano A.; Gonzalez, Maria Carolina; Bevilaqua, Lia R.; Rossato, Janine I.; Medina, Jorge H.; Cammarota, Martin

2013-01-01

Late post-training activation of the ventral tegmental area (VTA)-hippocampus dopaminergic loop controls the entry of information into long-term memory (LTM). Nicotinic acetylcholine receptors (nAChR) modulate VTA function, but their involvement in LTM storage is unknown. Using pharmacological and behavioral tools, we found that…

Computer memory: the LLL experience. [Octopus computer network

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fletcher, J.G.

1976-02-01

Those aspects of Octopus computer network design are reviewed that relate to memory and storage. Emphasis is placed on the difficulties and problems that arise because of the limitations of present storage devices, and indications are made of the directions in which technological advance could be of most value. (auth)

Phonological Storage and Executive Function Deficits in Children with Mathematics Difficulties

ERIC Educational Resources Information Center

Peng, Peng; Congying, Sun; Beilei, Li; Sha, Tao

2012-01-01

Children with mathematics difficulties suffer from working memory deficits. This study investigated the deficit profile of phonological storage and executive functions in working memory among children with mathematics difficulties. Based on multiple instruments and two assessment points, 68 children were screened out of 805 fifth graders. Of these…

The Structure of Visuospatial Memory in Adulthood

ERIC Educational Resources Information Center

Mammarella, Irene C.; Borella, Erika; Pastore, Massimiliano; Pazzaglia, Francesca

2013-01-01

The present study aimed to investigate the structure of visuospatial memory in adulthood. Adults 40-89 years of age (n = 160) performed simple storage and complex visuospatial span tasks. Simple storage tasks were distinguished into three presentation formats: (i) visual, which involved maintaining shapes and textures; (ii) spatial-sequential,…

Feasibility study of molecular memory device based on DNA using methylation to store information

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Liming; Al-Dirini, Feras; Center for Neural Engineering

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibriummore » Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.« less

Place Cells, Grid Cells, and Memory

PubMed Central

Moser, May-Britt; Rowland, David C.; Moser, Edvard I.

2015-01-01

The hippocampal system is critical for storage and retrieval of declarative memories, including memories for locations and events that take place at those locations. Spatial memories place high demands on capacity. Memories must be distinct to be recalled without interference and encoding must be fast. Recent studies have indicated that hippocampal networks allow for fast storage of large quantities of uncorrelated spatial information. The aim of the this article is to review and discuss some of this work, taking as a starting point the discovery of multiple functionally specialized cell types of the hippocampal–entorhinal circuit, such as place, grid, and border cells. We will show that grid cells provide the hippocampus with a metric, as well as a putative mechanism for decorrelation of representations, that the formation of environment-specific place maps depends on mechanisms for long-term plasticity in the hippocampus, and that long-term spatiotemporal memory storage may depend on offline consolidation processes related to sharp-wave ripple activity in the hippocampus. The multitude of representations generated through interactions between a variety of functionally specialized cell types in the entorhinal–hippocampal circuit may be at the heart of the mechanism for declarative memory formation. PMID:25646382

Storage and executive processes in the frontal lobes.

PubMed

Smith, E E; Jonides, J

1999-03-12

The human frontal cortex helps mediate working memory, a system that is used for temporary storage and manipulation of information and that is involved in many higher cognitive functions. Working memory includes two components: short-term storage (on the order of seconds) and executive processes that operate on the contents of storage. Recently, these two components have been investigated in functional neuroimaging studies. Studies of storage indicate that different frontal regions are activated for different kinds of information: storage for verbal materials activates Broca's area and left-hemisphere supplementary and premotor areas; storage of spatial information activates the right-hemisphere premotor cortex; and storage of object information activates other areas of the prefrontal cortex. Two of the fundamental executive processes are selective attention and task management. Both processes activate the anterior cingulate and dorsolateral prefrontal cortex.

19 CFR 19.31 - Bulk wheat of different classes and grades not to be commingled in storage.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 19 Customs Duties 1 2010-04-01 2010-04-01 false Bulk wheat of different classes and grades not to... CONTROL OF MERCHANDISE THEREIN Space Bonded for the Storage of Wheat § 19.31 Bulk wheat of different classes and grades not to be commingled in storage. All wheat shall be stored by class and grade according...

Emotionally enhanced memory for negatively arousing words: storage or retrieval advantage?

PubMed

Nadarevic, Lena

2017-12-01

People typically remember emotionally negative words better than neutral words. Two experiments are reported that investigate whether emotionally enhanced memory (EEM) for negatively arousing words is based on a storage or retrieval advantage. Participants studied non-word-word pairs that either involved negatively arousing or neutral target words. Memory for these target words was tested by means of a recognition test and a cued-recall test. Data were analysed with a multinomial model that allows the disentanglement of storage and retrieval processes in the present recognition-then-cued-recall paradigm. In both experiments the multinomial analyses revealed no storage differences between negatively arousing and neutral words but a clear retrieval advantage for negatively arousing words in the cued-recall test. These findings suggest that EEM for negatively arousing words is driven by associative processes.

A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.

PubMed

Hwang, Bohee; Lee, Jang-Sik

2017-08-01

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH 3 NH 3 PbI 3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 5 s. Moreover, the use of sequential vapor deposition is extended to deposit CH 3 NH 3 PbI 3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Protecting solid-state spins from a strongly coupled environment

NASA Astrophysics Data System (ADS)

Chen, Mo; Calvin Sun, Won Kyu; Saha, Kasturi; Jaskula, Jean-Christophe; Cappellaro, Paola

2018-06-01

Quantum memories are critical for solid-state quantum computing devices and a good quantum memory requires both long storage time and fast read/write operations. A promising system is the nitrogen-vacancy (NV) center in diamond, where the NV electronic spin serves as the computing qubit and a nearby nuclear spin as the memory qubit. Previous works used remote, weakly coupled 13C nuclear spins, trading read/write speed for long storage time. Here we focus instead on the intrinsic strongly coupled 14N nuclear spin. We first quantitatively understand its decoherence mechanism, identifying as its source the electronic spin that acts as a quantum fluctuator. We then propose a scheme to protect the quantum memory from the fluctuating noise by applying dynamical decoupling on the environment itself. We demonstrate a factor of 3 enhancement of the storage time in a proof-of-principle experiment, showing the potential for a quantum memory that combines fast operation with long coherence time.

Progress towards broadband Raman quantum memory in Bose-Einstein condensates

NASA Astrophysics Data System (ADS)

Saglamyurek, Erhan; Hrushevskyi, Taras; Smith, Benjamin; Leblanc, Lindsay

2017-04-01

Optical quantum memories are building blocks for quantum information technologies. Efficient and long-lived storage in combination with high-speed (broadband) operation are key features required for practical applications. While the realization has been a great challenge, Raman memory in Bose-Einstein condensates (BECs) is a promising approach, due to negligible decoherence from diffusion and collisions that leads to seconds-scale memory times, high efficiency due to large atomic density, the possibility for atom-chip integration with micro photonics, and the suitability of the far off-resonant Raman approach with storage of broadband photons (over GHz) [5]. Here we report our progress towards Raman memory in a BEC. We describe our apparatus recently built for producing BEC with 87Rb atoms, and present the observation of nearly pure BEC with 5x105 atoms at 40 nK. After showing our initial characterizations, we discuss the suitability of our system for Raman-based light storage in our BEC.

Neural Anatomy of Primary Visual Cortex Limits Visual Working Memory.

PubMed

Bergmann, Johanna; Genç, Erhan; Kohler, Axel; Singer, Wolf; Pearson, Joel

2016-01-01

Despite the immense processing power of the human brain, working memory storage is severely limited, and the neuroanatomical basis of these limitations has remained elusive. Here, we show that the stable storage limits of visual working memory for over 9 s are bound by the precise gray matter volume of primary visual cortex (V1), defined by fMRI retinotopic mapping. Individuals with a bigger V1 tended to have greater visual working memory storage. This relationship was present independently for both surface size and thickness of V1 but absent in V2, V3 and for non-visual working memory measures. Additional whole-brain analyses confirmed the specificity of the relationship to V1. Our findings indicate that the size of primary visual cortex plays a critical role in limiting what we can hold in mind, acting like a gatekeeper in constraining the richness of working mental function. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

Holographic memories with encryption-selectable function

NASA Astrophysics Data System (ADS)

Su, Wei-Chia; Lee, Xuan-Hao

2006-03-01

Volume holographic storage has received increasing attention owing to its potential high storage capacity and access rate. In the meanwhile, encrypted holographic memory using random phase encoding technique is attractive for an optical community due to growing demand for protection of information. In this paper, encryption-selectable holographic storage algorithms in LiNbO 3 using angular multiplexing are proposed and demonstrated. Encryption-selectable holographic memory is an advance concept of security storage for content protection. It offers more flexibility to encrypt the data or not optionally during the recording processes. In our system design, the function of encryption and non-encryption storage is switched by a random phase pattern and a uniform phase pattern. Based on a 90-degree geometry, the input patterns including the encryption and non-encryption storage are stored via angular multiplexing with reference plane waves at different incident angles. Image is encrypted optionally by sliding the ground glass into one of the recording waves or removing it away in each exposure. The ground glass is a key for encryption. Besides, it is also an important key available for authorized user to decrypt the encrypted information.

Multi-Level Bitmap Indexes for Flash Memory Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kesheng; Madduri, Kamesh; Canon, Shane

2010-07-23

Due to their low access latency, high read speed, and power-efficient operation, flash memory storage devices are rapidly emerging as an attractive alternative to traditional magnetic storage devices. However, tests show that the most efficient indexing methods are not able to take advantage of the flash memory storage devices. In this paper, we present a set of multi-level bitmap indexes that can effectively take advantage of flash storage devices. These indexing methods use coarsely binned indexes to answer queries approximately, and then use finely binned indexes to refine the answers. Our new methods read significantly lower volumes of data atmore » the expense of an increased disk access count, thus taking full advantage of the improved read speed and low access latency of flash devices. To demonstrate the advantage of these new indexes, we measure their performance on a number of storage systems using a standard data warehousing benchmark called the Set Query Benchmark. We observe that multi-level strategies on flash drives are up to 3 times faster than traditional indexing strategies on magnetic disk drives.« less

Asymmetric programming: a highly reliable metadata allocation strategy for MLC NAND flash memory-based sensor systems.

PubMed

Huang, Min; Liu, Zhaoqing; Qiao, Liyan

2014-10-10

While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash memory. In particular, it's critical to enhance metadata reliability, which occupies only a small portion of the storage space, but maintains the critical information of the file system and the address translations of the storage system. Metadata damage will cause the system to crash or a large amount of data to be lost. This paper presents Asymmetric Programming, a highly reliable metadata allocation strategy for MLC NAND flash memory storage systems. Our technique exploits for the first time the property of the multi-page architecture of MLC NAND flash memory to improve the reliability of metadata. The basic idea is to keep metadata in most significant bit (MSB) pages which are more reliable than least significant bit (LSB) pages. Thus, we can achieve relatively low bit error rates for metadata. Based on this idea, we propose two strategies to optimize address mapping and garbage collection. We have implemented Asymmetric Programming on a real hardware platform. The experimental results show that Asymmetric Programming can achieve a reduction in the number of page errors of up to 99.05% with the baseline error correction scheme.

Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems

PubMed Central

Huang, Min; Liu, Zhaoqing; Qiao, Liyan

2014-01-01

While the NAND flash memory is widely used as the storage medium in modern sensor systems, the aggressive shrinking of process geometry and an increase in the number of bits stored in each memory cell will inevitably degrade the reliability of NAND flash memory. In particular, it's critical to enhance metadata reliability, which occupies only a small portion of the storage space, but maintains the critical information of the file system and the address translations of the storage system. Metadata damage will cause the system to crash or a large amount of data to be lost. This paper presents Asymmetric Programming, a highly reliable metadata allocation strategy for MLC NAND flash memory storage systems. Our technique exploits for the first time the property of the multi-page architecture of MLC NAND flash memory to improve the reliability of metadata. The basic idea is to keep metadata in most significant bit (MSB) pages which are more reliable than least significant bit (LSB) pages. Thus, we can achieve relatively low bit error rates for metadata. Based on this idea, we propose two strategies to optimize address mapping and garbage collection. We have implemented Asymmetric Programming on a real hardware platform. The experimental results show that Asymmetric Programming can achieve a reduction in the number of page errors of up to 99.05% with the baseline error correction scheme. PMID:25310473

Memory timeline: Brain ERP C250 (not P300) is an early biomarker of short-term storage.

PubMed

Chapman, Robert M; Gardner, Margaret N; Mapstone, Mark; Dupree, Haley M; Antonsdottir, Inga M

2015-04-16

Brain event-related potentials (ERPs) offer a quantitative link between neurophysiological activity and cognitive performance. ERPs were measured while young adults performed a task that required storing a relevant stimulus in short-term memory. Using principal components analysis, ERP component C250 (maximum at 250 ms post-stimulus) was extracted from a set of ERPs that were separately averaged for various task conditions, including stimulus relevancy and stimulus sequence within a trial. C250 was more positive in response to task-specific stimuli that were successfully stored in short-term memory. This relationship between C250 and short-term memory storage of a stimulus was confirmed by a memory probe recall test where the behavioral recall of a stimulus was highly correlated with its C250 amplitude. ERP component P300 (and its subcomponents of P3a and P3b, which are commonly thought to represent memory operations) did not show a pattern of activation reflective of storing task-relevant stimuli. C250 precedes the P300, indicating that initial short-term memory storage may occur earlier than previously believed. Additionally, because C250 is so strongly predictive of a stimulus being stored in short-term memory, C250 may provide a strong index of early memory operations. Copyright © 2015 Elsevier B.V. All rights reserved.

Development of a Handbook for Educators: Addressing Working Memory Capacity in Elementary Students

ERIC Educational Resources Information Center

Fernandez, Julie Marie

2013-01-01

Working Memory (WM) refers to a brain system that provides temporary storage and manipulation of the information necessary for complex cognitive tasks such as language comprehension, learning, and reasoning. WM also requires the simultaneous storage and processing of information. WM is directly related to academic performance in the classroom.…

Kagan Structures, Processing, and Excellence in College Teaching

ERIC Educational Resources Information Center

Kagan, Spencer

2014-01-01

Frequent student processing of lecture content (1) clears working memory, (2) increases long-term memory storage, (3) produces retrograde memory enhancement, (4) creates episodic memories, (5) increases alertness, and (6) activates many brain structures. These outcomes increase comprehension of and memory for content. Many professors now…

Synaptic clustering within dendrites: an emerging theory of memory formation

PubMed Central

Kastellakis, George; Cai, Denise J.; Mednick, Sara C.; Silva, Alcino J.; Poirazi, Panayiota

2015-01-01

It is generally accepted that complex memories are stored in distributed representations throughout the brain, however the mechanisms underlying these representations are not understood. Here, we review recent findings regarding the subcellular mechanisms implicated in memory formation, which provide evidence for a dendrite-centered theory of memory. Plasticity-related phenomena which affect synaptic properties, such as synaptic tagging and capture, synaptic clustering, branch strength potentiation and spinogenesis provide the foundation for a model of memory storage that relies heavily on processes operating at the dendrite level. The emerging picture suggests that clusters of functionally related synapses may serve as key computational and memory storage units in the brain. We discuss both experimental evidence and theoretical models that support this hypothesis and explore its advantages for neuronal function. PMID:25576663

Fragile visual short-term memory is an object-based and location-specific store.

PubMed

Pinto, Yaïr; Sligte, Ilja G; Shapiro, Kimron L; Lamme, Victor A F

2013-08-01

Fragile visual short-term memory (FM) is a recently discovered form of visual short-term memory. Evidence suggests that it provides rich and high-capacity storage, like iconic memory, yet it exists, without interference, almost as long as visual working memory. In the present study, we sought to unveil the functional underpinnings of this memory storage. We found that FM is only completely erased when the new visual scene appears at the same location and consists of the same objects as the to-be-recalled information. This result has two important implications: First, it shows that FM is an object- and location-specific store, and second, it suggests that FM might be used in everyday life when the presentation of visual information is appropriately designed.

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-07-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.

Nonvolatile memory with Co-SiO2 core-shell nanocrystals as charge storage nodes in floating gate

NASA Astrophysics Data System (ADS)

Liu, Hai; Ferrer, Domingo A.; Ferdousi, Fahmida; Banerjee, Sanjay K.

2009-11-01

In this letter, we reported nanocrystal floating gate memory with Co-SiO2 core-shell nanocrystal charge storage nodes. By using a water-in-oil microemulsion scheme, Co-SiO2 core-shell nanocrystals were synthesized and closely packed to achieve high density matrix in the floating gate without aggregation. The insulator shell also can help to increase the thermal stability of the nanocrystal metal core during the fabrication process to improve memory performance.

High Storage Efficiency and Large Fractional Delay of EIT-Based Memory

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite

2013-05-01

In long-distance quantum communication and optical quantum computation, an efficient and long-lived quantum memory is an important component. We first experimentally demonstrated that a time-space-reversing method plus the optimum pulse shape can improve the storage efficiency (SE) of light pulses to 78% in cold media based on the effect of electromagnetically induced transparency (EIT). We obtain a large fractional delay of 74 at 50% SE, which is the best record so far. The measured classical fidelity of the recalled pulse is higher than 90% and nearly independent of the storage time, implying that the optical memory maintains excellent phase coherence. Our results suggest the current result may be readily applied to single-photon quantum states due to quantum nature of the EIT light-matter inference. This study advances the EIT-based quantum memory in practical quantum information applications.

Nonlinear machine learning and design of reconfigurable digital colloids.

PubMed

Long, Andrew W; Phillips, Carolyn L; Jankowksi, Eric; Ferguson, Andrew L

2016-09-14

Digital colloids, a cluster of freely rotating "halo" particles tethered to the surface of a central particle, were recently proposed as ultra-high density memory elements for information storage. Rational design of these digital colloids for memory storage applications requires a quantitative understanding of the thermodynamic and kinetic stability of the configurational states within which information is stored. We apply nonlinear machine learning to Brownian dynamics simulations of these digital colloids to extract the low-dimensional intrinsic manifold governing digital colloid morphology, thermodynamics, and kinetics. By modulating the relative size ratio between halo particles and central particles, we investigate the size-dependent configurational stability and transition kinetics for the 2-state tetrahedral (N = 4) and 30-state octahedral (N = 6) digital colloids. We demonstrate the use of this framework to guide the rational design of a memory storage element to hold a block of text that trades off the competing design criteria of memory addressability and volatility.

At the intersection of attention and memory: the mechanistic role of the posterior parietal lobe in working memory

PubMed Central

Berryhill, Marian E.; Chein, Jason; Olson, Ingrid R.

2011-01-01

Portions of the posterior parietal cortex (PPC) play a role in working memory (WM) yet the precise mechanistic function of this region remains poorly understood. The pure storage hypothesis proposes that this region functions as a short-lived modality-specific memory store. Alternatively, the internal attention hypothesis proposes that the PPC functions as an attention-based storage and refreshing mechanism deployable as an alternative to material-specific rehearsal. These models were tested in patients with bilateral PPC lesions. Our findings discount the pure storage hypothesis because variables indexing storage capacity and longevity were not disproportionately affected by PPC damage. Instead, our data support the internal attention account by showing that (a) normal participants tend to use a rehearsal-based WM maintenance strategy for recall tasks but not for recognition tasks; (b) patients with PPC lesions performed normally on WM tasks that relied on material-specific rehearsal strategies but poorly on WM tasks that relied on attention-based maintenance strategies and patient strategy usage could be shifted by task or instructions; (c) patients’ memory deficits extended into the long-term domain. These findings suggest that the PPC maintains or shifts internal attention among the representations of items in WM. PMID:21345344

At the intersection of attention and memory: the mechanistic role of the posterior parietal lobe in working memory.

PubMed

Berryhill, Marian E; Chein, Jason; Olson, Ingrid R

2011-04-01

Portions of the posterior parietal cortex (PPC) play a role in working memory (WM) yet the precise mechanistic function of this region remains poorly understood. The pure storage hypothesis proposes that this region functions as a short-lived modality-specific memory store. Alternatively, the internal attention hypothesis proposes that the PPC functions as an attention-based storage and refreshing mechanism deployable as an alternative to material-specific rehearsal. These models were tested in patients with bilateral PPC lesions. Our findings discount the pure storage hypothesis because variables indexing storage capacity and longevity were not disproportionately affected by PPC damage. Instead, our data support the internal attention account by showing that (a) normal participants tend to use a rehearsal-based WM maintenance strategy for recall tasks but not for recognition tasks; (b) patients with PPC lesions performed normally on WM tasks that relied on material-specific rehearsal strategies but poorly on WM tasks that relied on attention-based maintenance strategies and patient strategy usage could be shifted by task or instructions; (c) patients' memory deficits extended into the long-term domain. These findings suggest that the PPC maintains or shifts internal attention among the representations of items in WM. Copyright © 2011 Elsevier Ltd. All rights reserved.

Two-stage optical recording: photoinduced birefringence and surface-mediated bits storage in bisazo-containing copolymers towards ultrahigh data memory.

PubMed

Hu, Yanlei; Wu, Dong; Li, Jiawen; Huang, Wenhao; Chu, Jiaru

2016-10-03

Ultrahigh density data storage is in high demand in the current age of big data and thus motivates many innovative storage technologies. Femtosecond laser induced multi-dimensional optical data storage is an appealing method to fulfill the demand of ultrahigh storage capacity. Here we report a femtosecond laser induced two-stage optical storage in bisazobenzene copolymer films by manipulating the recording energies. Different mechanisms can be selected for specified memory use: two-photon isomerization (TPI) and laser induced surface deformation. Giant birefringence can be generated by TPI and brings about high signal-to-noise ratio (>20 dB) multi-dimensional reversible storage. Polarization-dependent surface deformation arises when increasing the recording energy, which not only facilitates the multi-level storage by black bits (dots), but also enhances the bits' readout signal and storing stability. This facile bits recording method, which enables completely different recording mechanisms in an identical storage medium, paves the way for sustainable big data storage.

The Science of Computing: Virtual Memory

NASA Technical Reports Server (NTRS)

Denning, Peter J.

1986-01-01

In the March-April issue, I described how a computer's storage system is organized as a hierarchy consisting of cache, main memory, and secondary memory (e.g., disk). The cache and main memory form a subsystem that functions like main memory but attains speeds approaching cache. What happens if a program and its data are too large for the main memory? This is not a frivolous question. Every generation of computer users has been frustrated by insufficient memory. A new line of computers may have sufficient storage for the computations of its predecessor, but new programs will soon exhaust its capacity. In 1960, a longrange planning committee at MIT dared to dream of a computer with 1 million words of main memory. In 1985, the Cray-2 was delivered with 256 million words. Computational physicists dream of computers with 1 billion words. Computer architects have done an outstanding job of enlarging main memories yet they have never kept up with demand. Only the shortsighted believe they can.

Application of phase-change materials in memory taxonomy

PubMed Central

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects. PMID:28740557

Kanerva's sparse distributed memory with multiple hamming thresholds

NASA Technical Reports Server (NTRS)

Pohja, Seppo; Kaski, Kimmo

1992-01-01

If the stored input patterns of Kanerva's Sparse Distributed Memory (SDM) are highly correlated, utilization of the storage capacity is very low compared to the case of uniformly distributed random input patterns. We consider a variation of SDM that has a better storage capacity utilization for correlated input patterns. This approach uses a separate selection threshold for each physical storage address or hard location. The selection of the hard locations for reading or writing can be done in parallel of which SDM implementations can benefit.

A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

De, Arup

2014-01-01

Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interfacemore » (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.« less

Storage Media for Microcomputers.

ERIC Educational Resources Information Center

Trautman, Rodes

1983-01-01

Reviews computer storage devices designed to provide additional memory for microcomputers--chips, floppy disks, hard disks, optical disks--and describes how secondary storage is used (file transfer, formatting, ingredients of incompatibility); disk/controller/software triplet; magnetic tape backup; storage volatility; disk emulator; and…

Bubble memory module for spacecraft application

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Looney, K. T.; Nichols, C. D.

1985-01-01

Bubble domain technology offers an all-solid-state alternative for data storage in onboard data systems. A versatile modular bubble memory concept was developed. The key module is the bubble memory module which contains all of the storage devices and circuitry for accessing these devices. This report documents the bubble memory module design and preliminary hardware designs aimed at memory module functional demonstration with available commercial bubble devices. The system architecture provides simultaneous operation of bubble devices to attain high data rates. Banks of bubble devices are accessed by a given bubble controller to minimize controller parts. A power strobing technique is discussed which could minimize the average system power dissipation. A fast initialization method using EEPROM (electrically erasable, programmable read-only memory) devices promotes fast access. Noise and crosstalk problems and implementations to minimize these are discussed. Flight memory systems which incorporate the concepts and techniques of this work could now be developed for applications.

Storage of features, conjunctions and objects in visual working memory.

PubMed

Vogel, E K; Woodman, G F; Luck, S J

2001-02-01

Working memory can be divided into separate subsystems for verbal and visual information. Although the verbal system has been well characterized, the storage capacity of visual working memory has not yet been established for simple features or for conjunctions of features. The authors demonstrate that it is possible to retain information about only 3-4 colors or orientations in visual working memory at one time. Observers are also able to retain both the color and the orientation of 3-4 objects, indicating that visual working memory stores integrated objects rather than individual features. Indeed, objects defined by a conjunction of four features can be retained in working memory just as well as single-feature objects, allowing many individual features to be retained when distributed across a small number of objects. Thus, the capacity of visual working memory must be understood in terms of integrated objects rather than individual features.

A polymer/semiconductor write-once read-many-times memory

NASA Astrophysics Data System (ADS)

Möller, Sven; Perlov, Craig; Jackson, Warren; Taussig, Carl; Forrest, Stephen R.

2003-11-01

Organic devices promise to revolutionize the extent of, and access to, electronics by providing extremely inexpensive, lightweight and capable ubiquitous components that are printed onto plastic, glass or metal foils. One key component of an electronic circuit that has thus far received surprisingly little attention is an organic electronic memory. Here we report an architecture for a write-once read-many-times (WORM) memory, based on the hybrid integration of an electrochromic polymer with a thin-film silicon diode deposited onto a flexible metal foil substrate. WORM memories are desirable for ultralow-cost permanent storage of digital images, eliminating the need for slow, bulky and expensive mechanical drives used in conventional magnetic and optical memories. Our results indicate that the hybrid organic/inorganic memory device is a reliable means for achieving rapid, large-scale archival data storage. The WORM memory pixel exploits a mechanism of current-controlled, thermally activated un-doping of a two-component electrochromic conducting polymer.

A wide bandwidth CCD buffer memory system

NASA Technical Reports Server (NTRS)

Siemens, K.; Wallace, R. W.; Robinson, C. R.

1978-01-01

A prototype system was implemented to demonstrate that CCD's can be applied advantageously to the problem of low power digital storage and particularly to the problem of interfacing widely varying data rates. CCD shift register memories (8K bit) were used to construct a feasibility model 128 K-bit buffer memory system. Serial data that can have rates between 150 kHz and 4.0 MHz can be stored in 4K-bit, randomly-accessible memory blocks. Peak power dissipation during a data transfer is less than 7 W, while idle power is approximately 5.4 W. The system features automatic data input synchronization with the recirculating CCD memory block start address. System expansion to accommodate parallel inputs or a greater number of memory blocks can be performed in a modular fashion. Since the control logic does not increase proportionally to increase in memory capacity, the power requirements per bit of storage can be reduced significantly in a larger system.

Electronic device aspects of neural network memories

NASA Technical Reports Server (NTRS)

Lambe, J.; Moopenn, A.; Thakoor, A. P.

1985-01-01

The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

SODR Memory Control Buffer Control ASIC

NASA Technical Reports Server (NTRS)

Hodson, Robert F.

1994-01-01

The Spacecraft Optical Disk Recorder (SODR) is a state of the art mass storage system for future NASA missions requiring high transmission rates and a large capacity storage system. This report covers the design and development of an SODR memory buffer control applications specific integrated circuit (ASIC). The memory buffer control ASIC has two primary functions: (1) buffering data to prevent loss of data during disk access times, (2) converting data formats from a high performance parallel interface format to a small computer systems interface format. Ten 144 p in, 50 MHz CMOS ASIC's were designed, fabricated and tested to implement the memory buffer control function.

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Lamb, J. L.; Moopenn, A.; Khanna, S. K.

1987-01-01

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Virtual memory support for distributed computing environments using a shared data object model

NASA Astrophysics Data System (ADS)

Huang, F.; Bacon, J.; Mapp, G.

1995-12-01

Conventional storage management systems provide one interface for accessing memory segments and another for accessing secondary storage objects. This hinders application programming and affects overall system performance due to mandatory data copying and user/kernel boundary crossings, which in the microkernel case may involve context switches. Memory-mapping techniques may be used to provide programmers with a unified view of the storage system. This paper extends such techniques to support a shared data object model for distributed computing environments in which good support for coherence and synchronization is essential. The approach is based on a microkernel, typed memory objects, and integrated coherence control. A microkernel architecture is used to support multiple coherence protocols and the addition of new protocols. Memory objects are typed and applications can choose the most suitable protocols for different types of object to avoid protocol mismatch. Low-level coherence control is integrated with high-level concurrency control so that the number of messages required to maintain memory coherence is reduced and system-wide synchronization is realized without severely impacting the system performance. These features together contribute a novel approach to the support for flexible coherence under application control.

INVESTIGATION OF INORGANIC PHOTOTROPIC MATERIALS AS A BI-OPTIC ELEMENT APPLICABLE IN HIGH DENSITY STORAGE COMPUTER MEMORIES

DTIC Science & Technology

A general valuation of the various types of phototropic (i.e., reversible, light induced, color producing) phenomenon is given regarding the...application of phototropic material to bioptic high density storage media for compu er memories. The inorganic ’’F’’ center type phototropic systems were

Mapping the developmental constraints on working memory span performance.

PubMed

Bayliss, Donna M; Jarrold, Christopher; Baddeley, Alan D; Gunn, Deborah M; Leigh, Eleanor

2005-07-01

This study investigated the constraints underlying developmental improvements in complex working memory span performance among 120 children of between 6 and 10 years of age. Independent measures of processing efficiency, storage capacity, rehearsal speed, and basic speed of processing were assessed to determine their contribution to age-related variance in complex span. Results showed that developmental improvements in complex span were driven by 2 age-related but separable factors: 1 associated with general speed of processing and 1 associated with storage ability. In addition, there was an age-related contribution shared between working memory, processing speed, and storage ability that was important for higher level cognition. These results pose a challenge for models of complex span performance that emphasize the importance of processing speed alone.

New Trends of Digital Data Storage in DNA

PubMed Central

2016-01-01

With the exponential growth in the capacity of information generated and the emerging need for data to be stored for prolonged period of time, there emerges a need for a storage medium with high capacity, high storage density, and possibility to withstand extreme environmental conditions. DNA emerges as the prospective medium for data storage with its striking features. Diverse encoding models for reading and writing data onto DNA, codes for encrypting data which addresses issues of error generation, and approaches for developing codons and storage styles have been developed over the recent past. DNA has been identified as a potential medium for secret writing, which achieves the way towards DNA cryptography and stenography. DNA utilized as an organic memory device along with big data storage and analytics in DNA has paved the way towards DNA computing for solving computational problems. This paper critically analyzes the various methods used for encoding and encrypting data onto DNA while identifying the advantages and capability of every scheme to overcome the drawbacks identified priorly. Cryptography and stenography techniques have been analyzed in a critical approach while identifying the limitations of each method. This paper also identifies the advantages and limitations of DNA as a memory device and memory applications. PMID:27689089

New Trends of Digital Data Storage in DNA.

PubMed

De Silva, Pavani Yashodha; Ganegoda, Gamage Upeksha

With the exponential growth in the capacity of information generated and the emerging need for data to be stored for prolonged period of time, there emerges a need for a storage medium with high capacity, high storage density, and possibility to withstand extreme environmental conditions. DNA emerges as the prospective medium for data storage with its striking features. Diverse encoding models for reading and writing data onto DNA, codes for encrypting data which addresses issues of error generation, and approaches for developing codons and storage styles have been developed over the recent past. DNA has been identified as a potential medium for secret writing, which achieves the way towards DNA cryptography and stenography. DNA utilized as an organic memory device along with big data storage and analytics in DNA has paved the way towards DNA computing for solving computational problems. This paper critically analyzes the various methods used for encoding and encrypting data onto DNA while identifying the advantages and capability of every scheme to overcome the drawbacks identified priorly. Cryptography and stenography techniques have been analyzed in a critical approach while identifying the limitations of each method. This paper also identifies the advantages and limitations of DNA as a memory device and memory applications.

Dopaminergic neurons write and update memories with cell-type-specific rules

PubMed Central

Aso, Yoshinori; Rubin, Gerald M

2016-01-01

Associative learning is thought to involve parallel and distributed mechanisms of memory formation and storage. In Drosophila, the mushroom body (MB) is the major site of associative odor memory formation. Previously we described the anatomy of the adult MB and defined 20 types of dopaminergic neurons (DANs) that each innervate distinct MB compartments (Aso et al., 2014a, 2014b). Here we compare the properties of memories formed by optogenetic activation of individual DAN cell types. We found extensive differences in training requirements for memory formation, decay dynamics, storage capacity and flexibility to learn new associations. Even a single DAN cell type can either write or reduce an aversive memory, or write an appetitive memory, depending on when it is activated relative to odor delivery. Our results show that different learning rules are executed in seemingly parallel memory systems, providing multiple distinct circuit-based strategies to predict future events from past experiences. DOI: http://dx.doi.org/10.7554/eLife.16135.001 PMID:27441388

High-speed noise-free optical quantum memory

NASA Astrophysics Data System (ADS)

Kaczmarek, K. T.; Ledingham, P. M.; Brecht, B.; Thomas, S. E.; Thekkadath, G. S.; Lazo-Arjona, O.; Munns, J. H. D.; Poem, E.; Feizpour, A.; Saunders, D. J.; Nunn, J.; Walmsley, I. A.

2018-04-01

Optical quantum memories are devices that store and recall quantum light and are vital to the realization of future photonic quantum networks. To date, much effort has been put into improving storage times and efficiencies of such devices to enable long-distance communications. However, less attention has been devoted to building quantum memories which add zero noise to the output. Even small additional noise can render the memory classical by destroying the fragile quantum signatures of the stored light. Therefore, noise performance is a critical parameter for all quantum memories. Here we introduce an intrinsically noise-free quantum memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We demonstrate successful storage of GHz-bandwidth heralded single photons in a warm atomic vapor with no added noise, confirmed by the unaltered photon-number statistics upon recall. Our ORCA memory meets the stringent noise requirements for quantum memories while combining high-speed and room-temperature operation with technical simplicity, and therefore is immediately applicable to low-latency quantum networks.

Similarity as an organising principle in short-term memory.

PubMed

LeCompte, D C; Watkins, M J

1993-03-01

The role of stimulus similarity as an organising principle in short-term memory was explored in a series of seven experiments. Each experiment involved the presentation of a short sequence of items that were drawn from two distinct physical classes and arranged such that item class changed after every second item. Following presentation, one item was re-presented as a probe for the 'target' item that had directly followed it in the sequence. Memory for the sequence was considered organised by class if probability of recall was higher when the probe and target were from the same class than when they were from different classes. Such organisation was found when one class was auditory and the other was visual (spoken vs. written words, and sounds vs. pictures). It was also found when both classes were auditory (words spoken in a male voice vs. words spoken in a female voice) and when both classes were visual (digits shown in one location vs. digits shown in another). It is concluded that short-term memory can be organised on the basis of sensory modality and on the basis of certain features within both the auditory and visual modalities.

ADHD and working memory: the impact of central executive deficits and exceeding storage/rehearsal capacity on observed inattentive behavior.

PubMed

Kofler, Michael J; Rapport, Mark D; Bolden, Jennifer; Sarver, Dustin E; Raiker, Joseph S

2010-02-01

Inattentive behavior is considered a core and pervasive feature of ADHD; however, an alternative model challenges this premise and hypothesizes a functional relationship between working memory deficits and inattentive behavior. The current study investigated whether inattentive behavior in children with ADHD is functionally related to the domain-general central executive and/or subsidiary storage/rehearsal components of working memory. Objective observations of children's attentive behavior by independent observers were conducted while children with ADHD (n = 15) and typically developing children (n = 14) completed counterbalanced tasks that differentially manipulated central executive, phonological storage/rehearsal, and visuospatial storage/rehearsal demands. Results of latent variable and effect size confidence interval analyses revealed two conditions that completely accounted for the attentive behavior deficits in children with ADHD: (a) placing demands on central executive processing, the effect of which is evident under even low cognitive loads, and (b) exceeding storage/rehearsal capacity, which has similar effects on children with ADHD and typically developing children but occurs at lower cognitive loads for children with ADHD.

Massive Memory Revisited: Limitations on Storage Capacity for Object Details in Visual Long-Term Memory

ERIC Educational Resources Information Center

Cunningham, Corbin A.; Yassa, Michael A.; Egeth, Howard E.

2015-01-01

Previous work suggests that visual long-term memory (VLTM) is highly detailed and has a massive capacity. However, memory performance is subject to the effects of the type of testing procedure used. The current study examines detail memory performance by probing the same memories within the same subjects, but using divergent probing methods. The…

A Memory B Cell Crossmatch Assay for Quantification of Donor-Specific Memory B Cells in the Peripheral Blood of HLA-Immunized Individuals.

PubMed

Karahan, G E; de Vaal, Y J H; Krop, J; Wehmeier, C; Roelen, D L; Claas, F H J; Heidt, S

2017-10-01

Humoral responses against mismatched donor HLA are routinely measured as serum HLA antibodies, which are mainly produced by bone marrow-residing plasma cells. Individuals with a history of alloimmunization but lacking serum antibodies may harbor circulating dormant memory B cells, which may rapidly become plasma cells on antigen reencounter. Currently available methods to detect HLA-specific memory B cells are scarce and insufficient in quantifying the complete donor-specific memory B cell response due to their dependence on synthetic HLA molecules. We present a highly sensitive and specific tool for quantifying donor-specific memory B cells in peripheral blood of individuals using cell lysates covering the complete HLA class I and class II repertoire of an individual. Using this enzyme-linked immunospot (ELISpot) assay, we found a median frequency of 31 HLA class I and 89 HLA class II-specific memory B cells per million IgG-producing cells directed at paternal HLA in peripheral blood samples from women (n = 22) with a history of pregnancy, using cell lysates from spouses. The donor-specific memory B cell ELISpot can be used in HLA diagnostic laboratories as a cross-match assay to quantify donor-specific memory B cells in patients with a history of sensitizing events. © 2017 The American Society of Transplantation and the American Society of Transplant Surgeons.

How Does Processing Affect Storage in Working Memory Tasks? Evidence for Both Domain-General and Domain-Specific Effects

ERIC Educational Resources Information Center

Jarrold, Christopher; Tam, Helen; Baddeley, Alan D.; Harvey, Caroline E.

2011-01-01

Two studies that examine whether the forgetting caused by the processing demands of working memory tasks is domain-general or domain-specific are presented. In each, separate groups of adult participants were asked to carry out either verbal or nonverbal operations on exactly the same processing materials while maintaining verbal storage items.…

Disentangling the Relationship between Working Memory and Language: The Roles of Short-Term Storage and Cognitive Control

ERIC Educational Resources Information Center

Engel de Abreu, Pascale Marguerite Josiane; Gathercole, Susan Elizabeth; Martin, Romain

2011-01-01

This study investigates the relationship between working memory and language in young children growing up in a multilingual environment. The aim is to explore whether mechanisms of short-term storage and cognitive control hold similar relations to emerging language skills and to investigate if potential links are mediated by related cognitive…

Camera memory study for large space telescope. [charge coupled devices

NASA Technical Reports Server (NTRS)

Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

1975-01-01

Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

Medial prefrontal cortex dopamine controls the persistent storage of aversive memories

PubMed Central

Gonzalez, María C.; Kramar, Cecilia P.; Tomaiuolo, Micol; Katche, Cynthia; Weisstaub, Noelia; Cammarota, Martín; Medina, Jorge H.

2014-01-01

Medial prefrontal cortex (mPFC) is essential for initial memory processing and expression but its involvement in persistent memory storage has seldom been studied. Using the hippocampus dependent inhibitory avoidance learning task and the hippocampus-independent conditioned taste aversion paradigm together with specific dopamine receptor agonists and antagonists we found that persistence but not formation of long-term aversive memories requires dopamine D1/D5 receptors activation in mPFC immediately after training and, depending on the task, between 6 and 12 h later. Our results indicate that besides its well-known participation in retrieval and early consolidation, mPFC also modulates the endurance of long-lasting aversive memories regardless of whether formation of the aversive mnemonic trace requires the participation of the hippocampus. PMID:25506318

Electrically-controlled nonlinear switching and multi-level storage characteristics in WOx film-based memory cells

NASA Astrophysics Data System (ADS)

Duan, W. J.; Wang, J. B.; Zhong, X. L.

2018-05-01

Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in Pt/WOx/Pt cells are investigated. Both of the nonlinear switching and multi-level storage can be achieved by setting different compliance current in the same cell. The correlations among the current, time and temperature are analyzed by using contours and 3D surfaces. The switching mechanism is explained in terms of the formation and rupture of conductive filament which is related to oxygen vacancies. The experimental results show that the non-stoichiometric WOx film-based device offers a feasible way for the applications of oxide-based RRAMs.

Positive affect improves working memory: implications for controlled cognitive processing.

PubMed

Yang, Hwajin; Yang, Sujin; Isen, Alice M

2013-01-01

This study examined the effects of positive affect on working memory (WM) and short-term memory (STM). Given that WM involves both storage and controlled processing and that STM primarily involves storage processing, we hypothesised that if positive affect facilitates controlled processing, it should improve WM more than STM. The results demonstrated that positive affect, compared with neutral affect, significantly enhanced WM, as measured by the operation span task. The influence of positive affect on STM, however, was weaker. These results suggest that positive affect enhances WM, a task that involves controlled processing, not just storage processing. Additional analyses of recall and processing times and accuracy further suggest that improved WM under positive affect is not attributable to motivational differences, but results instead from improved controlled cognitive processing.

Spectral multiplexing for scalable quantum photonics using an atomic frequency comb quantum memory and feed-forward control.

PubMed

Sinclair, Neil; Saglamyurek, Erhan; Mallahzadeh, Hassan; Slater, Joshua A; George, Mathew; Ricken, Raimund; Hedges, Morgan P; Oblak, Daniel; Simon, Christoph; Sohler, Wolfgang; Tittel, Wolfgang

2014-08-01

Future multiphoton applications of quantum optics and quantum information science require quantum memories that simultaneously store many photon states, each encoded into a different optical mode, and enable one to select the mapping between any input and a specific retrieved mode during storage. Here we show, with the example of a quantum repeater, how to employ spectrally multiplexed states and memories with fixed storage times that allow such mapping between spectral modes. Furthermore, using a Ti:Tm:LiNbO_{3} waveguide cooled to 3 K, a phase modulator, and a spectral filter, we demonstrate storage followed by the required feed-forward-controlled frequency manipulation with time-bin qubits encoded into up to 26 multiplexed spectral modes and 97% fidelity.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

PubMed

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-11-22

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

PubMed Central

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-01-01

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

Photoelectrochemical information storage using an azobenzene derivative

NASA Astrophysics Data System (ADS)

Liu, Z. F.; Hashimoto, K.; Fujishima, A.

1990-10-01

HIGH-DENSITY information storage is becoming an increasingly important technological objective. The 'heat-mode' storage techniques (in which only the thermal energy of laser light is used in the recording process and hence information usually stored as a physical change of the storage media) that are used in current optical memories are limited by the diffraction properties of light1, and the alternative 'photon-mode' (in which information is stored as a photon-induced chemical change of the storage media) has attracted attention recently for high-density storage. The most promising candidates for realizing this mode seem to be photochro-ism and photochemical hole burning; but these have some intrinsic drawbacks1,2. Here we present a novel 'photon-mode' technique that uses the photoelectrochemical properties of a Langmuir-Blodgett film of an azobenzene derivative. The system can be interconverted photochemically or electrochemically between three chemical states, and this three-state system is shown to provide a potential storage process that allows for ultra-high storage density, multi-function memory and non-destructive information readout.

Two-dimensional signal processing using a morphological filter for holographic memory

NASA Astrophysics Data System (ADS)

Kondo, Yo; Shigaki, Yusuke; Yamamoto, Manabu

2012-03-01

Today, along with the wider use of high-speed information networks and multimedia, it is increasingly necessary to have higher-density and higher-transfer-rate storage devices. Therefore, research and development into holographic memories with three-dimensional storage areas is being carried out to realize next-generation large-capacity memories. However, in holographic memories, interference between bits, which affect the detection characteristics, occurs as a result of aberrations such as the deviation of a wavefront in an optical system. In this study, we pay particular attention to the nonlinear factors that cause bit errors, where filters with a Volterra equalizer and the morphologies are investigated as a means of signal processing.

BDNF is essential to promote persistence of long-term memory storage

PubMed Central

Bekinschtein, Pedro; Cammarota, Martín; Katche, Cynthia; Slipczuk, Leandro; Rossato, Janine I.; Goldin, Andrea; Izquierdo, Ivan; Medina, Jorge H.

2008-01-01

Persistence is a characteristic attribute of long-term memories (LTMs). However, little is known about the molecular mechanisms that mediate this process. We recently showed that persistence of LTM requires a late protein synthesis- and BDNF-dependent phase in the hippocampus. Here, we show that intrahippocampal delivery of BDNF reverses the deficit in memory persistence caused by inhibition of hippocampal protein synthesis. Importantly, we demonstrate that BDNF induces memory persistence by itself, transforming a nonlasting LTM trace into a persistent one in an ERK-dependent manner. Thus, BDNF is not only necessary, but sufficient to induce a late postacquisition phase in the hippocampus essential for persistence of LTM storage. PMID:18263738

C-MOS array design techniques: SUMC multiprocessor system study

NASA Technical Reports Server (NTRS)

Clapp, W. A.; Helbig, W. A.; Merriam, A. S.

1972-01-01

The current capabilities of LSI techniques for speed and reliability, plus the possibilities of assembling large configurations of LSI logic and storage elements, have demanded the study of multiprocessors and multiprocessing techniques, problems, and potentialities. Evaluated are three previous systems studies for a space ultrareliable modular computer multiprocessing system, and a new multiprocessing system is proposed that is flexibly configured with up to four central processors, four 1/0 processors, and 16 main memory units, plus auxiliary memory and peripheral devices. This multiprocessor system features a multilevel interrupt, qualified S/360 compatibility for ground-based generation of programs, virtual memory management of a storage hierarchy through 1/0 processors, and multiport access to multiple and shared memory units.

Non-volatile memory for checkpoint storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumrich, Matthias A.; Chen, Dong; Cipolla, Thomas M.

A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, themore » non-volatile memory is a pluggable flash memory card.« less

High speed, very large (8 megabyte) first in/first out buffer memory (FIFO)

DOEpatents

Baumbaugh, Alan E.; Knickerbocker, Kelly L.

1989-01-01

A fast FIFO (First In First Out) memory buffer capable of storing data at rates of 100 megabytes per second. The invention includes a data packer which concatenates small bit data words into large bit data words, a memory array having individual data storage addresses adapted to store the large bit data words, a data unpacker into which large bit data words from the array can be read and reconstructed into small bit data words, and a controller to control and keep track of the individual data storage addresses in the memory array into which data from the packer is being written and data to the unpacker is being read.

The Longevity of Hippocampus-Dependent Memory Is Orchestrated by the Locus Coeruleus-Noradrenergic System

PubMed Central

2017-01-01

The locus coeruleus is connected to the dorsal hippocampus via strong fiber projections. It becomes activated after arousal and novelty, whereupon noradrenaline is released in the hippocampus. Noradrenaline from the locus coeruleus is involved in modulating the encoding, consolidation, retrieval, and reversal of hippocampus-based memory. Memory storage can be modified by the activation of the locus coeruleus and subsequent facilitation of hippocampal long-term plasticity in the forms of long-term depression and long-term potentiation. Recent evidence indicates that noradrenaline and dopamine are coreleased in the hippocampus from locus coeruleus terminals, thus fostering neuromodulation of long-term synaptic plasticity and memory. Noradrenaline is an inductor of epigenetic modifications regulating transcriptional control of synaptic long-term plasticity to gate the endurance of memory storage. In conclusion, locus coeruleus activation primes the persistence of hippocampus-based long-term memory. PMID:28695015

The Role and Mechanisms of Action of Glucocorticoid Involvement in Memory Storage

PubMed Central

Sandi, Carmen

1998-01-01

Adrenal steroid hormones modulate learning and memory processes by interacting with specific glucocorticoid receptors at different brain areas. In this article, certain components of the physiological response to stress elicited by learning situations are proposed to form an integral aspect of the neurobiological mechanism underlying memory formation. By reviewing the work carried out in different learning models in chicks (passive avoidance learning) and rats (spatial orientation in the Morris water maze and contextual fear conditioning), a role for brain corticosterone action through the glucocorticoid receptor type on the mechanisms of memory consolidation is hypothesized. Evidence is also presented to relate post-training corticosterone levels to the strength of memory storage. Finally, the possible molecular mechanisms that might mediate the influences of glucocorticoids in synaptic plasticity subserving long-term memory formation are considered, mainly by focusing on studies implicating a steroid action through (i) glutamatergic transmission and (ii) cell adhesion molecules. PMID:9920681

Functional Integrity of the Retrosplenial Cortex Is Essential for Rapid Consolidation and Recall of Fear Memory

ERIC Educational Resources Information Center

Katche, Cynthia; Dorman, Guido; Slipczuk, Leandro; Cammarota, Martin; Medina, Jorge H.

2013-01-01

Memory storage is a temporally graded process involving different phases and different structures in the mammalian brain. Cortical plasticity is essential to store stable memories, but little is known regarding its involvement in memory processing. Here we show that fear memory consolidation requires early post-training macromolecular synthesis in…

Associative memory cells and their working principle in the brain

PubMed Central

Wang, Jin-Hui; Cui, Shan

2018-01-01

The acquisition, integration and storage of exogenous associated signals are termed as associative learning and memory. The consequences and processes of associative thinking and logical reasoning based on these stored exogenous signals can be memorized as endogenous signals, which are essential for decision making, intention, and planning. Associative memory cells recruited in these primary and secondary associative memories are presumably the foundation for the brain to fulfill cognition events and emotional reactions in life, though the plasticity of synaptic connectivity and neuronal activity has been believed to be involved in learning and memory. Current reports indicate that associative memory cells are recruited by their mutual synapse innervations among co-activated brain regions to fulfill the integration, storage and retrieval of associated signals. The activation of these associative memory cells initiates information recall in the mind, and the successful activation of their downstream neurons endorses memory presentations through behaviors and emotion reactions. In this review, we aim to draw a comprehensive diagram for associative memory cells, working principle and modulation, as well as propose their roles in cognition, emotion and behaviors. PMID:29487741

Working memory is not fixed-capacity: More active storage capacity for real-world objects than for simple stimuli

PubMed Central

Brady, Timothy F.; Störmer, Viola S.; Alvarez, George A.

2016-01-01

Visual working memory is the cognitive system that holds visual information active to make it resistant to interference from new perceptual input. Information about simple stimuli—colors and orientations—is encoded into working memory rapidly: In under 100 ms, working memory ‟fills up,” revealing a stark capacity limit. However, for real-world objects, the same behavioral limits do not hold: With increasing encoding time, people store more real-world objects and do so with more detail. This boost in performance for real-world objects is generally assumed to reflect the use of a separate episodic long-term memory system, rather than working memory. Here we show that this behavioral increase in capacity with real-world objects is not solely due to the use of separate episodic long-term memory systems. In particular, we show that this increase is a result of active storage in working memory, as shown by directly measuring neural activity during the delay period of a working memory task using EEG. These data challenge fixed-capacity working memory models and demonstrate that working memory and its capacity limitations are dependent upon our existing knowledge. PMID:27325767

Working memory is not fixed-capacity: More active storage capacity for real-world objects than for simple stimuli.

PubMed

Brady, Timothy F; Störmer, Viola S; Alvarez, George A

2016-07-05

Visual working memory is the cognitive system that holds visual information active to make it resistant to interference from new perceptual input. Information about simple stimuli-colors and orientations-is encoded into working memory rapidly: In under 100 ms, working memory ‟fills up," revealing a stark capacity limit. However, for real-world objects, the same behavioral limits do not hold: With increasing encoding time, people store more real-world objects and do so with more detail. This boost in performance for real-world objects is generally assumed to reflect the use of a separate episodic long-term memory system, rather than working memory. Here we show that this behavioral increase in capacity with real-world objects is not solely due to the use of separate episodic long-term memory systems. In particular, we show that this increase is a result of active storage in working memory, as shown by directly measuring neural activity during the delay period of a working memory task using EEG. These data challenge fixed-capacity working memory models and demonstrate that working memory and its capacity limitations are dependent upon our existing knowledge.

Memory Span and General Intelligence: A Latent-Variable Approach

ERIC Educational Resources Information Center

Colom, Roberto; Abad, Francisco J.; Rebollo, Irene; Chun Shih, Pei

2005-01-01

There are several studies showing that working memory and intelligence are strongly related. However, working memory tasks require simultaneous processing and storage, so the causes of their relationship with intelligence are currently a matter of discussion. The present study examined the simultaneous relationships among short-term memory (STM),…

Fading In

ERIC Educational Resources Information Center

Nader, Karim; Wang, Szu-Han

2006-01-01

Patient H.M. can form new memories and maintain them for a few seconds before they fade away. From a neurobiological perspective, this amnesia is usually attributed to the absence of memory consolidation, that is, memory storage. An alternative view holds that this impairment reflects that the memory is present but cannot be retrieved. This debate…

Co-design of application software and NAND flash memory in solid-state drive for relational database storage system

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Sun, Chao; Soga, Ayumi; Takeuchi, Ken

2014-01-01

A relational database management system (RDBMS) is designed based on NAND flash solid-state drive (SSD) for storage. By vertically integrating the storage engine (SE) and the flash translation layer (FTL), system performance is maximized and the internal SSD overhead is minimized. The proposed RDBMS SE utilizes physical information about the NAND flash memory which is supplied from the FTL. The query operation is also optimized for SSD. By these treatments, page-copy-less garbage collection is achieved and data fragmentation in the NAND flash memory is suppressed. As a result, RDBMS performance increases by 3.8 times, power consumption of SSD decreases by 46% and SSD life time is increased by 61%. The effectiveness of the proposed scheme increases with larger erase block sizes, which matches the future scaling trend of three-dimensional (3D-) NAND flash memories. The preferable row data size of the proposed scheme is below 500 byte for 16 kbyte page size.

Working memory deficits in adults with attention-deficit/hyperactivity disorder (ADHD): an examination of central executive and storage/rehearsal processes.

PubMed

Alderson, R Matt; Hudec, Kristen L; Patros, Connor H G; Kasper, Lisa J

2013-05-01

The current study was the first to use a regression approach to examine the unique contributions of central executive (CE) and storage/rehearsal processes to working memory (WM) deficits in adults with ADHD. Thirty-seven adults (ADHD = 21, HC = 16) completed phonological (PH) and visuospatial (VS) working memory tasks. While both groups performed significantly better during the PH task relative to the VS task, adults with ADHD exhibited significant deficits across both working memory modalities. Further, the ADHD group recalled disproportionately fewer PH and VS stimuli as set-size demands increased. Overall, the CE and PH storage/rehearsal processes of adults with ADHD were both significantly impaired relative to those of the healthy control adults; however, the magnitude of the CE effect size was much smaller compared to previous studies of children with the disorder. Collectively, results provide support for a lifelong trajectory of WM deficits in ADHD. © 2013 American Psychological Association

Setting a disordered password on a photonic memory

NASA Astrophysics Data System (ADS)

Su, Shih-Wei; Gou, Shih-Chuan; Chew, Lock Yue; Chang, Yu-Yen; Yu, Ite A.; Kalachev, Alexey; Liao, Wen-Te

2017-06-01

An all-optical method of setting a disordered password on different schemes of photonic memory is theoretically studied. While photons are regarded as ideal information carriers, it is imperative to implement such data protection on all-optical storage. However, we wish to address the intrinsic risk of data breaches in existing schemes of photonic memory. We theoretically demonstrate a protocol using spatially disordered laser fields to encrypt data stored on an optical memory, namely, encrypted photonic memory. To address the broadband storage, we also investigate a scheme of disordered echo memory with a high fidelity approaching unity. The proposed method increases the difficulty for the eavesdropper to retrieve the stored photon without the preset password even when the randomized and stored photon state is nearly perfectly cloned. Our results pave ways to significantly reduce the exposure of memories, required for long-distance communication, to eavesdropping and therefore restrict the optimal attack on communication protocols. The present scheme also increases the sensitivity of detecting any eavesdropper and so raises the security level of photonic information technology.

Selection and Storage of Perceptual Groups Is Constrained by a Discrete Resource in Working Memory

ERIC Educational Resources Information Center

Anderson, David E.; Vogel, Edward K.; Awh, Edward

2013-01-01

Perceptual grouping can lead observers to perceive a multielement scene as a smaller number of hierarchical units. Past work has shown that grouping enables more elements to be stored in visual working memory (WM). Although this may appear to contradict so-called discrete resource models that argue for fixed item limits in WM storage, it is also…

Robust holographic storage system design.

PubMed

Watanabe, Takahiro; Watanabe, Minoru

2011-11-21

Demand is increasing daily for large data storage systems that are useful for applications in spacecraft, space satellites, and space robots, which are all exposed to radiation-rich space environment. As candidates for use in space embedded systems, holographic storage systems are promising because they can easily provided the demanded large-storage capability. Particularly, holographic storage systems, which have no rotation mechanism, are demanded because they are virtually maintenance-free. Although a holographic memory itself is an extremely robust device even in a space radiation environment, its associated lasers and drive circuit devices are vulnerable. Such vulnerabilities sometimes engendered severe problems that prevent reading of all contents of the holographic memory, which is a turn-off failure mode of a laser array. This paper therefore presents a proposal for a recovery method for the turn-off failure mode of a laser array on a holographic storage system, and describes results of an experimental demonstration. © 2011 Optical Society of America

Implications of the Declarative/Procedural Model for Improving Second Language Learning: The Role of Memory Enhancement Techniques

ERIC Educational Resources Information Center

Ullman, Michael T.; Lovelett, Jarrett T.

2018-01-01

The declarative/procedural (DP) model posits that the learning, storage, and use of language critically depend on two learning and memory systems in the brain: declarative memory and procedural memory. Thus, on the basis of independent research on the memory systems, the model can generate specific and often novel predictions for language. Till…

Episodic Memory Impairments in Primary Brain Tumor Patients.

PubMed

Durand, Thomas; Berzero, Giulia; Bompaire, Flavie; Hoffmann, Sabine; Léger, Isabelle; Jego, Virginie; Baruteau, Marie; Delgadillo, Daniel; Taillia, Hervé; Psimaras, Dimitri; Ricard, Damien

2018-01-04

Cognitive investigations in brain tumor patients have mostly explored episodic memory without differentiating between encoding, storage, and retrieval deficits. The aim of this study is to offer insight into the memory sub-processes affected in primary brain tumor patients and propose an appropriate assessment method. We retrospectively reviewed the clinical and memory assessments of 158 patients with primary brain tumors who had presented to our departments with cognitive complaints and were investigated using the Free and Cued Selective Reminding Test. Retrieval was the process of episodic memory most frequently affected, with deficits in this domain detected in 92% of patients with episodic memory impairments. Storage and encoding deficits were less prevalent, with impairments, respectively, detected in 41% and 23% of memory-impaired patients. The pattern of episodic memory impairment was similar across different tumor histologies and treatment modalities. Although all processes of episodic memory were found to be impaired, retrieval was by far the most widely affected function. A thorough assessment of all three components of episodic memory should be part of the regular neuropsychological evaluation in patients with primary brain tumors. © The Author(s) 2018. Published by Oxford University Press. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Compact Holographic Data Storage

NASA Technical Reports Server (NTRS)

Chao, T. H.; Reyes, G. F.; Zhou, H.

2001-01-01

NASA's future missions would require massive high-speed onboard data storage capability to Space Science missions. For Space Science, such as the Europa Lander mission, the onboard data storage requirements would be focused on maximizing the spacecraft's ability to survive fault conditions (i.e., no loss in stored science data when spacecraft enters the 'safe mode') and autonomously recover from them during NASA's long-life and deep space missions. This would require the development of non-volatile memory. In order to survive in the stringent environment during space exploration missions, onboard memory requirements would also include: (1) survive a high radiation environment (1 Mrad), (2) operate effectively and efficiently for a very long time (10 years), and (3) sustain at least a billion write cycles. Therefore, memory technologies requirements of NASA's Earth Science and Space Science missions are large capacity, non-volatility, high-transfer rate, high radiation resistance, high storage density, and high power efficiency. JPL, under current sponsorship from NASA Space Science and Earth Science Programs, is developing a high-density, nonvolatile and rad-hard Compact Holographic Data Storage (CHDS) system to enable large-capacity, high-speed, low power consumption, and read/write of data in a space environment. The entire read/write operation will be controlled with electrooptic mechanism without any moving parts. This CHDS will consist of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high-speed. The nonvolatile, rad-hard characteristics of the holographic memory will provide a revolutionary memory technology meeting the high radiation challenge facing the Europa Lander mission. Additional information is contained in the original extended abstract.

Projected phase-change memory devices.

PubMed

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Min Kim, Sung; Lee, Youngmin; Seo, David H.; Seo, Sunae; Wang, Kang L.

2012-12-01

A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential drop in the control oxide Al2O3 and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.

Integrated Vertical Bloch Line (VBL) memory

NASA Technical Reports Server (NTRS)

Katti, R. R.; Wu, J. C.; Stadler, H. L.

1991-01-01

Vertical Bloch Line (VBL) Memory is a recently conceived, integrated, solid state, block access, VLSI memory which offers the potential of 1 Gbit/sq cm areal storage density, data rates of hundreds of megabits/sec, and submillisecond average access time simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBLs are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of BVL pairs are used to store binary information. At present, efforts are being directed at developing a single chip memory using 25 Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. The current design architecture, functional elements, and supercomputer simulation results are described which are used to assist the design process.

Origami-based tunable truss structures for non-volatile mechanical memory operation.

PubMed

Yasuda, Hiromi; Tachi, Tomohiro; Lee, Mia; Yang, Jinkyu

2017-10-17

Origami has recently received significant interest from the scientific community as a method for designing building blocks to construct metamaterials. However, the primary focus has been placed on their kinematic applications by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells-specifically triangulated cylindrical origami (TCO)-with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical memory storage devices. We show that a pair of TCO cells can develop a double-well potential to store bit information. What makes this origami-based approach more appealing is the realization of two-bit mechanical memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. By assembling TCO-based truss structures, we experimentally verify the tunable nature of the TCO units and demonstrate the operation of purely mechanical one- and two-bit memory storage prototypes.Origami is a popular method to design building blocks for mechanical metamaterials. Here, the authors assemble a volumetric origami-based structure, predict its axial and rotational movements during folding, and demonstrate the operation of mechanical one- and two-bit memory storage.

Central and Peripheral Components of Working Memory Storage

PubMed Central

Cowan, Nelson; Saults, J. Scott; Blume, Christopher L.

2014-01-01

This study re-examines the issue of how much of working memory storage is central, or shared across sensory modalities and verbal and nonverbal codes, and how much is peripheral, or specific to a modality or code. In addition to the exploration of many parameters in 9 new dual-task experiments and re-analysis of some prior evidence, the innovations of the present work compared to previous studies of memory for two stimulus sets include (1) use of a principled set of formulas to estimate the number of items in working memory, and (2) a model to dissociate central components, which are allocated to very different stimulus sets depending on the instructions, from peripheral components, which are used for only one kind of material. We consistently find that the central contribution is smaller than was suggested by Saults and Cowan (2007), and that the peripheral contribution is often much larger when the task does not require the binding of features within an object. Previous capacity estimates are consistent with the sum of central plus peripheral components observed here. We consider the implications of the data as constraints on theories of working memory storage and maintenance. PMID:24867488

Distinct Transfer Effects of Training Different Facets of Working Memory Capacity

ERIC Educational Resources Information Center

von Bastian, Claudia C.; Oberauer, Klaus

2013-01-01

The impact of working memory training on a broad set of transfer tasks was examined. Each of three groups of participants trained one specific functional category of working memory capacity: storage and processing, relational integration, and supervision. A battery comprising tests to measure working memory, task shifting, inhibition, and…

Evidence for Two Attentional Components in Visual Working Memory

ERIC Educational Resources Information Center

Allen, Richard J.; Baddeley, Alan D.; Hitch, Graham J.

2014-01-01

How does executive attentional control contribute to memory for sequences of visual objects, and what does this reveal about storage and processing in working memory? Three experiments examined the impact of a concurrent executive load (backward counting) on memory for sequences of individually presented visual objects. Experiments 1 and 2 found…

Metal-organic molecular device for non-volatile memory storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radha, B., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organicmore » complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.« less

Evidence for an Evolutionarily Conserved Memory Coding Scheme in the Mammalian Hippocampus

PubMed Central

Thome, Alexander; Lisanby, Sarah H.; McNaughton, Bruce L.

2017-01-01

Decades of research identify the hippocampal formation as central to memory storage and recall. Events are stored via distributed population codes, the parameters of which (e.g., sparsity and overlap) determine both storage capacity and fidelity. However, it remains unclear whether the parameters governing information storage are similar between species. Because episodic memories are rooted in the space in which they are experienced, the hippocampal response to navigation is often used as a proxy to study memory. Critically, recent studies in rodents that mimic the conditions typical of navigation studies in humans and nonhuman primates (i.e., virtual reality) show that reduced sensory input alters hippocampal representations of space. The goal of this study was to quantify this effect and determine whether there are commonalities in information storage across species. Using functional molecular imaging, we observe that navigation in virtual environments elicits activity in fewer CA1 neurons relative to real-world conditions. Conversely, comparable neuronal activity is observed in hippocampus region CA3 and the dentate gyrus under both conditions. Surprisingly, we also find evidence that the absolute number of neurons used to represent an experience is relatively stable between nonhuman primates and rodents. We propose that this convergence reflects an optimal ensemble size for episodic memories. SIGNIFICANCE STATEMENT One primary factor constraining memory capacity is the sparsity of the engram, the proportion of neurons that encode a single experience. Investigating sparsity in humans is hampered by the lack of single-cell resolution and differences in behavioral protocols. Sparsity can be quantified in freely moving rodents, but extrapolating these data to humans assumes that information storage is comparable across species and is robust to restraint-induced reduction in sensory input. Here, we test these assumptions and show that species differences in brain size build memory capacity without altering the structure of the data being stored. Furthermore, sparsity in most of the hippocampus is resilient to reduced sensory information. This information is vital to integrating animal data with human imaging navigation studies. PMID:28174334

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng

While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Furthermore, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfO x memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information,more » we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.« less

Three-dimensional magnetic bubble memory system

NASA Technical Reports Server (NTRS)

Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor)

1994-01-01

A compact memory uses magnetic bubble technology for providing data storage. A three-dimensional arrangement, in the form of stacks of magnetic bubble layers, is used to achieve high volumetric storage density. Output tracks are used within each layer to allow data to be accessed uniquely and unambiguously. Storage can be achieved using either current access or field access magnetic bubble technology. Optical sensing via the Faraday effect is used to detect data. Optical sensing facilitates the accessing of data from within the three-dimensional package and lends itself to parallel operation for supporting high data rates and vector and parallel processing.

Persistent Memory in Single Node Delay-Coupled Reservoir Computing.

PubMed

Kovac, André David; Koall, Maximilian; Pipa, Gordon; Toutounji, Hazem

2016-01-01

Delays are ubiquitous in biological systems, ranging from genetic regulatory networks and synaptic conductances, to predator/pray population interactions. The evidence is mounting, not only to the presence of delays as physical constraints in signal propagation speed, but also to their functional role in providing dynamical diversity to the systems that comprise them. The latter observation in biological systems inspired the recent development of a computational architecture that harnesses this dynamical diversity, by delay-coupling a single nonlinear element to itself. This architecture is a particular realization of Reservoir Computing, where stimuli are injected into the system in time rather than in space as is the case with classical recurrent neural network realizations. This architecture also exhibits an internal memory which fades in time, an important prerequisite to the functioning of any reservoir computing device. However, fading memory is also a limitation to any computation that requires persistent storage. In order to overcome this limitation, the current work introduces an extended version to the single node Delay-Coupled Reservoir, that is based on trained linear feedback. We show by numerical simulations that adding task-specific linear feedback to the single node Delay-Coupled Reservoir extends the class of solvable tasks to those that require nonfading memory. We demonstrate, through several case studies, the ability of the extended system to carry out complex nonlinear computations that depend on past information, whereas the computational power of the system with fading memory alone quickly deteriorates. Our findings provide the theoretical basis for future physical realizations of a biologically-inspired ultrafast computing device with extended functionality.

Persistent Memory in Single Node Delay-Coupled Reservoir Computing

PubMed Central

Pipa, Gordon; Toutounji, Hazem

2016-01-01

Delays are ubiquitous in biological systems, ranging from genetic regulatory networks and synaptic conductances, to predator/pray population interactions. The evidence is mounting, not only to the presence of delays as physical constraints in signal propagation speed, but also to their functional role in providing dynamical diversity to the systems that comprise them. The latter observation in biological systems inspired the recent development of a computational architecture that harnesses this dynamical diversity, by delay-coupling a single nonlinear element to itself. This architecture is a particular realization of Reservoir Computing, where stimuli are injected into the system in time rather than in space as is the case with classical recurrent neural network realizations. This architecture also exhibits an internal memory which fades in time, an important prerequisite to the functioning of any reservoir computing device. However, fading memory is also a limitation to any computation that requires persistent storage. In order to overcome this limitation, the current work introduces an extended version to the single node Delay-Coupled Reservoir, that is based on trained linear feedback. We show by numerical simulations that adding task-specific linear feedback to the single node Delay-Coupled Reservoir extends the class of solvable tasks to those that require nonfading memory. We demonstrate, through several case studies, the ability of the extended system to carry out complex nonlinear computations that depend on past information, whereas the computational power of the system with fading memory alone quickly deteriorates. Our findings provide the theoretical basis for future physical realizations of a biologically-inspired ultrafast computing device with extended functionality. PMID:27783690

An efficient parallel algorithm: Poststack and prestack Kirchhoff 3D depth migration using flexi-depth iterations

NASA Astrophysics Data System (ADS)

Rastogi, Richa; Srivastava, Abhishek; Khonde, Kiran; Sirasala, Kirannmayi M.; Londhe, Ashutosh; Chavhan, Hitesh

2015-07-01

This paper presents an efficient parallel 3D Kirchhoff depth migration algorithm suitable for current class of multicore architecture. The fundamental Kirchhoff depth migration algorithm exhibits inherent parallelism however, when it comes to 3D data migration, as the data size increases the resource requirement of the algorithm also increases. This challenges its practical implementation even on current generation high performance computing systems. Therefore a smart parallelization approach is essential to handle 3D data for migration. The most compute intensive part of Kirchhoff depth migration algorithm is the calculation of traveltime tables due to its resource requirements such as memory/storage and I/O. In the current research work, we target this area and develop a competent parallel algorithm for post and prestack 3D Kirchhoff depth migration, using hybrid MPI+OpenMP programming techniques. We introduce a concept of flexi-depth iterations while depth migrating data in parallel imaging space, using optimized traveltime table computations. This concept provides flexibility to the algorithm by migrating data in a number of depth iterations, which depends upon the available node memory and the size of data to be migrated during runtime. Furthermore, it minimizes the requirements of storage, I/O and inter-node communication, thus making it advantageous over the conventional parallelization approaches. The developed parallel algorithm is demonstrated and analysed on Yuva II, a PARAM series of supercomputers. Optimization, performance and scalability experiment results along with the migration outcome show the effectiveness of the parallel algorithm.

Reevaluating the Sensory Account of Visual Working Memory Storage.

PubMed

Xu, Yaoda

2017-10-01

Recent human fMRI pattern-decoding studies have highlighted the involvement of sensory areas in visual working memory (VWM) tasks and argue for a sensory account of VWM storage. In this review, evidence is examined from human behavior, fMRI decoding, and transcranial magnetic stimulation (TMS) studies, as well as from monkey neurophysiology studies. Contrary to the prevalent view, the available evidence provides little support for the sensory account of VWM storage. Instead, when the ability to resist distraction and the existence of top-down feedback are taken into account, VWM-related activities in sensory areas seem to reflect feedback signals indicative of VWM storage elsewhere in the brain. Collectively, the evidence shows that prefrontal and parietal regions, rather than sensory areas, play more significant roles in VWM storage. Copyright © 2017 Elsevier Ltd. All rights reserved.

An ASIC memory buffer controller for a high speed disk system

NASA Technical Reports Server (NTRS)

Hodson, Robert F.; Campbell, Steve

1993-01-01

The need for large capacity, high speed mass memory storage devices has become increasingly evident at NASA during the past decade. High performance mass storage systems are crucial to present and future NASA systems. Spaceborne data storage system requirements have grown in response to the increasing amounts of data generated and processed by orbiting scientific experiments. Predictions indicate increases in the volume of data by orders of magnitude during the next decade. Current predictions are for storage capacities on the order of terabits (Tb), with data rates exceeding one gigabit per second (Gbps). As part of the design effort for a state of the art mass storage system, NASA Langley has designed a 144 CMOS ASIC to support high speed data transfers. This paper discusses the system architecture, ASIC design and some of the lessons learned in the development process.

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

NASA Astrophysics Data System (ADS)

Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

2013-11-01

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

Left TPJ activity in verbal working memory: implications for storage- and sensory-specific models of short term memory.

PubMed

Ravizza, Susan M; Hazeltine, Eliot; Ruiz, Sandra; Zhu, David C

2011-04-15

Patients with damage to the left temporoparietal junction (TPJ) have a low verbal span without concomitant deficits in speech perception. This pattern of cognitive impairment is taken as evidence for a dedicated phonological buffer that plays little role in perception (storage-specific account). In contrast, other research suggests that items are maintained and perceived in the same regions (sensory-specific account). In an fMRI study, we demonstrate that the left TPJ does not respond in a way predicted of a phonological buffer; that is, activity in this region is not sustained during encoding or maintenance. Instead, a region in the superior temporal gyrus that has been associated with both speech perception and production demonstrated the expected profile of a store: it was more active in the verbal condition than the object condition and was active during both encoding and maintenance. These results support the sensory-specific account of short term memory rather than the storage-specific account. Based on the pattern of activity in the left TPJ, we suggest that the impairment of verbal working memory observed in patients with TPJ damage may be due to diminished attentional processes rather than reduced storage capacity. Copyright © 2010 Elsevier Inc. All rights reserved.

Storage of RF photons in minimal conditions

NASA Astrophysics Data System (ADS)

Cromières, J.-P.; Chanelière, T.

2018-02-01

We investigate the minimal conditions to store coherently a RF pulse in a material medium. We choose a commercial quartz as a memory support because it is a widely available component with a high Q-factor. Pulse storage is obtained by varying dynamically the light-matter coupling with an analog switch. This parametric driving of the quartz dynamics can be alternatively interpreted as a stopped-light experiment. We obtain an efficiency of 26%, a storage time of 209 μs and a time-to-bandwidth product of 98 by optimizing the pulse temporal shape. The coherent character of the storage is demonstrated. Our goal is to connect different types of memories in the RF and optical domain for quantum information processing. Our motivation is essentially fundamental.

Analysis of memory use for improved design and compile-time allocation of local memory

NASA Technical Reports Server (NTRS)

Mcniven, Geoffrey D.; Davidson, Edward S.

1986-01-01

Trace analysis techniques are used to study memory referencing behavior for the purpose of designing local memories and determining how to allocate them for data and instructions. In an attempt to assess the inherent behavior of the source code, the trace analysis system described here reduced the effects of the compiler and host architecture on the trace by using a technical called flattening. The variables in the trace, their associated single-assignment values, and references are histogrammed on the basis of various parameters describing memory referencing behavior. Bounds are developed specifying the amount of memory space required to store all live values in a particular histogram class. The reduction achieved in main memory traffic by allocating local memory is specified for each class.

Optimal Recall from Bounded Metaplastic Synapses: Predicting Functional Adaptations in Hippocampal Area CA3

PubMed Central

Savin, Cristina; Dayan, Peter; Lengyel, Máté

2014-01-01

A venerable history of classical work on autoassociative memory has significantly shaped our understanding of several features of the hippocampus, and most prominently of its CA3 area, in relation to memory storage and retrieval. However, existing theories of hippocampal memory processing ignore a key biological constraint affecting memory storage in neural circuits: the bounded dynamical range of synapses. Recent treatments based on the notion of metaplasticity provide a powerful model for individual bounded synapses; however, their implications for the ability of the hippocampus to retrieve memories well and the dynamics of neurons associated with that retrieval are both unknown. Here, we develop a theoretical framework for memory storage and recall with bounded synapses. We formulate the recall of a previously stored pattern from a noisy recall cue and limited-capacity (and therefore lossy) synapses as a probabilistic inference problem, and derive neural dynamics that implement approximate inference algorithms to solve this problem efficiently. In particular, for binary synapses with metaplastic states, we demonstrate for the first time that memories can be efficiently read out with biologically plausible network dynamics that are completely constrained by the synaptic plasticity rule, and the statistics of the stored patterns and of the recall cue. Our theory organises into a coherent framework a wide range of existing data about the regulation of excitability, feedback inhibition, and network oscillations in area CA3, and makes novel and directly testable predictions that can guide future experiments. PMID:24586137

Amygdala's involvement in facilitating associative learning-induced plasticity: a promiscuous role for the amygdala in memory acquisition

PubMed Central

Chau, Lily S.; Galvez, Roberto

2012-01-01

It is widely accepted that the amygdala plays a critical role in acquisition and consolidation of fear-related memories. Some of the more widely employed behavioral paradigms that have assisted in solidifying the amygdala's role in fear-related memories are associative learning paradigms. With most associative learning tasks, a neutral conditioned stimulus (CS) is paired with a salient unconditioned stimulus (US) that elicits an unconditioned response (UR). After multiple CS-US pairings, the subject learns that the CS predicts the onset or delivery of the US, and thus elicits a learned conditioned response (CR). Most fear-related associative paradigms have suggested that an aspect of the fear association is stored in the amygdala; however, some fear-motivated associative paradigms suggest that the amygdala is not a site of storage, but rather facilitates consolidation in other brain regions. Based upon various learning theories, one of the most likely sites for storage of long-term memories is the neocortex. In support of these theories, findings from our laboratory, and others, have demonstrated that trace-conditioning, an associative paradigm where there is a separation in time between the CS and US, induces learning-specific neocortical plasticity. The following review will discuss the amygdala's involvement, either as a site of storage or facilitating storage in other brain regions such as the neocortex, in fear- and non-fear-motivated associative paradigms. In this review, we will discuss recent findings suggesting a broader role for the amygdala in increasing the saliency of behaviorally relevant information, thus facilitating acquisition for all forms of memory, both fear- and non-fear-related. This proposed promiscuous role of the amygdala in facilitating acquisition for all memories further suggests a potential role of the amygdala in general learning disabilities. PMID:23087626

Amygdala's involvement in facilitating associative learning-induced plasticity: a promiscuous role for the amygdala in memory acquisition.

PubMed

Chau, Lily S; Galvez, Roberto

2012-01-01

It is widely accepted that the amygdala plays a critical role in acquisition and consolidation of fear-related memories. Some of the more widely employed behavioral paradigms that have assisted in solidifying the amygdala's role in fear-related memories are associative learning paradigms. With most associative learning tasks, a neutral conditioned stimulus (CS) is paired with a salient unconditioned stimulus (US) that elicits an unconditioned response (UR). After multiple CS-US pairings, the subject learns that the CS predicts the onset or delivery of the US, and thus elicits a learned conditioned response (CR). Most fear-related associative paradigms have suggested that an aspect of the fear association is stored in the amygdala; however, some fear-motivated associative paradigms suggest that the amygdala is not a site of storage, but rather facilitates consolidation in other brain regions. Based upon various learning theories, one of the most likely sites for storage of long-term memories is the neocortex. In support of these theories, findings from our laboratory, and others, have demonstrated that trace-conditioning, an associative paradigm where there is a separation in time between the CS and US, induces learning-specific neocortical plasticity. The following review will discuss the amygdala's involvement, either as a site of storage or facilitating storage in other brain regions such as the neocortex, in fear- and non-fear-motivated associative paradigms. In this review, we will discuss recent findings suggesting a broader role for the amygdala in increasing the saliency of behaviorally relevant information, thus facilitating acquisition for all forms of memory, both fear- and non-fear-related. This proposed promiscuous role of the amygdala in facilitating acquisition for all memories further suggests a potential role of the amygdala in general learning disabilities.

Sleeping in a Brave New World: Opportunities for Improving Learning and Clinical Outcomes through Targeted Memory Reactivation.

PubMed

Paller, Ken A

2017-12-01

Neuroscientific insights into learning and memory have mostly concerned input and output, but intervening processing during the time between acquisition and retrieval is also critical. Indeed, intervening memory reactivation may regulate memory longevity, and a growing body of evidence implicates sleep in changing memory storage. For example, subtle auditory stimulation can be used experimentally to selectively encourage memory reactivation during sleep, which thereby improves learning. Much remains to be elucidated about how learning depends on sleep. Nevertheless, this methodology for modifying memory storage during sleep offers new opportunities for reinforcing learning to enhance clinical outcomes in conjunction with therapies engaged during waking. A variety of such possibilities must now be carefully investigated. Likewise, brain rhythms can be entrained to enhance sleep functions, facilitating further progress in understanding the neurophysiological basis of memory processing during sleep. Ultimately, empirical evidence may reveal the extent to which the way we behave when awake is a function of what our brains do when we are asleep. Through such research efforts, an advanced understanding of memory and sleep may allow us to both make better use of our time asleep and take steps toward better health.

Re-evaluating the relationships among filtering activity, unnecessary storage, and visual working memory capacity.

PubMed

Emrich, Stephen M; Busseri, Michael A

2015-09-01

The amount of task-irrelevant information encoded in visual working memory (VWM), referred to as unnecessary storage, has been proposed as a potential mechanism underlying individual differences in VWM capacity. In addition, a number of studies have provided evidence for additional activity that initiates the filtering process originating in the frontal cortex and basal ganglia, and is therefore a crucial step in the link between unnecessary storage and VWM capacity. Here, we re-examine data from two prominent studies that identified unnecessary storage activity as a predictor of VWM capacity by directly testing the implied path model linking filtering-related activity, unnecessary storage, and VWM capacity. Across both studies, we found that unnecessary storage was not a significant predictor of individual differences in VWM capacity once activity associated with filtering was accounted for; instead, activity associated with filtering better explained variation in VWM capacity. These findings suggest that unnecessary storage is not a limiting factor in VWM performance, whereas neural activity associated with filtering may play a more central role in determining VWM performance that goes beyond preventing unnecessary storage.

Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng

Due to the favorable operating power, endurance, speed, and density., transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physiocochemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron X-ray spectromicroscopy to study in situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resettingmore » the cells toward their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.« less

Inefficient Executive Cognitive Control in Schizophrenia Is Preceded by Altered Functional Activation during Information Encoding: An fMRI Study

ERIC Educational Resources Information Center

Schlosser, Ralf G. M.; Koch, Kathrin; Wagner, Gerd; Nenadic, Igor; Roebel, Martin; Schachtzabel, Claudia; Axer, Martina; Schultz, Christoph; Reichenbach, Jurgen R.; Sauer, Heinrich

2008-01-01

Working memory deficits are a core feature of schizophrenia. Previous working memory studies suggest a load dependent storage deficit. However, explicit studies of higher executive working memory processes are limited. Moreover, few studies have examined whether subcomponents of working memory such as encoding and maintenance of information are…

Protein Synthesis Underlies Post-Retrieval Memory Consolidation to a Restricted Degree Only when Updated Information Is Obtained

ERIC Educational Resources Information Center

Rodriguez-Ortiz, Carlos J.; De la Cruz, Vanesa; Gutierrez, Ranier; Bermudez-Rattoni, Federico

2005-01-01

Consolidation theory proposes that through the synthesis of new proteins recently acquired memories are strengthened over time into a stable long-term memory trace. However, evidence has accumulated suggesting that retrieved memory is susceptible to disruption, seeming to consolidate again (reconsolidate) to be retained in long-term storage. Here…

Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

PubMed

Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

2012-03-01

The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

ERP C250 Shows the Elderly (Cognitively Normal, Alzheimer’s Disease) Store More Stimuli in Short-Term Memory than Young Adults Do

PubMed Central

Chapman, Robert M.; Gardner, Margaret N.; Mapstone, Mark; Klorman, Rafael; Porsteinsson, Anton P.; Dupree, Haley M.; Antonsdottir, Inga M.; Kamalyan, Lily

2016-01-01

Objective To determine how aging and dementia affect the brain’s initial storing of task-relevant and irrelevant information in short-term memory. Methods We used brain Event-Related Potentials (ERPs) to measure short-term memory storage (ERP component C250) in 36 Young Adults, 36 Normal Elderly, and 36 early-stage AD subjects. Participants performed the Number-Letter task, a cognitive paradigm requiring memory storage of a first relevant stimulus to compare it with a second stimulus. Results In Young Adults, C250 was more positive for the first task-relevant stimulus compared to all other stimuli. C250 in Normal Elderly and AD subjects was roughly the same to relevant and irrelevant stimuli in intratrial parts 1–3 but not 4. The AD group had lower C250 to relevant stimuli in part 1. Conclusions Both normal aging and dementia cause less differentiation of relevant from irrelevant information in initial storage. There was a large aging effect involving differences in the pattern of C250 responses of the Young Adult versus the Normal Elderly/AD groups. Also, a potential dementia effect was obtained. Significance C250 is a candidate tool for measuring short-term memory performance on a biological level, as well as a potential marker for memory changes due to normal aging and dementia. PMID:27178862

Effect with high density nano dot type storage layer structure on 20 nm planar NAND flash memory characteristics

NASA Astrophysics Data System (ADS)

Sasaki, Takeshi; Muraguchi, Masakazu; Seo, Moon-Sik; Park, Sung-kye; Endoh, Tetsuo

2014-01-01

The merits, concerns and design principle for the future nano dot (ND) type NAND flash memory cell are clarified, by considering the effect of storage layer structure on NAND flash memory characteristics. The characteristics of the ND cell for a NAND flash memory in comparison with the floating gate type (FG) is comprehensively studied through the read, erase, program operation, and the cell to cell interference with device simulation. Although the degradation of the read throughput (0.7% reduction of the cell current) and slower program time (26% smaller programmed threshold voltage shift) with high density (10 × 1012 cm-2) ND NAND are still concerned, the suppress of the cell to cell interference with high density (10 × 1012 cm-2) plays the most important part for scaling and multi-level cell (MLC) operation in comparison with the FG NAND. From these results, the design knowledge is shown to require the control of the number of nano dots rather than the higher nano dot density, from the viewpoint of increasing its memory capacity by MLC operation and suppressing threshold voltage variability caused by the number of dots in the storage layer. Moreover, in order to increase its memory capacity, it is shown the tunnel oxide thickness with ND should be designed thicker (>3 nm) than conventional designed ND cell for programming/erasing with direct tunneling mechanism.

Garnet Random-Access Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.

Persistent neural activity in auditory cortex is related to auditory working memory in humans and nonhuman primates

PubMed Central

Huang, Ying; Matysiak, Artur; Heil, Peter; König, Reinhard; Brosch, Michael

2016-01-01

Working memory is the cognitive capacity of short-term storage of information for goal-directed behaviors. Where and how this capacity is implemented in the brain are unresolved questions. We show that auditory cortex stores information by persistent changes of neural activity. We separated activity related to working memory from activity related to other mental processes by having humans and monkeys perform different tasks with varying working memory demands on the same sound sequences. Working memory was reflected in the spiking activity of individual neurons in auditory cortex and in the activity of neuronal populations, that is, in local field potentials and magnetic fields. Our results provide direct support for the idea that temporary storage of information recruits the same brain areas that also process the information. Because similar activity was observed in the two species, the cellular bases of some auditory working memory processes in humans can be studied in monkeys. DOI: http://dx.doi.org/10.7554/eLife.15441.001 PMID:27438411

Configurable memory system and method for providing atomic counting operations in a memory device

DOEpatents

Bellofatto, Ralph E.; Gara, Alan G.; Giampapa, Mark E.; Ohmacht, Martin

2010-09-14

A memory system and method for providing atomic memory-based counter operations to operating systems and applications that make most efficient use of counter-backing memory and virtual and physical address space, while simplifying operating system memory management, and enabling the counter-backing memory to be used for purposes other than counter-backing storage when desired. The encoding and address decoding enabled by the invention provides all this functionality through a combination of software and hardware.

National assessment of geologic carbon dioxide storage resources: results

USGS Publications Warehouse

,

2013-01-01

In 2012, the U.S. Geological Survey (USGS) completed an assessment of the technically accessible storage resources (TASR) for carbon dioxide (CO2) in geologic formations underlying the onshore and State waters area of the United States. The formations assessed are at least 3,000 feet (914 meters) below the ground surface. The TASR is an estimate of the CO2 storage resource that may be available for CO2 injection and storage that is based on present-day geologic and hydrologic knowledge of the subsurface and current engineering practices. Individual storage assessment units (SAUs) for 36 basins were defined on the basis of geologic and hydrologic characteristics outlined in the assessment methodology of Brennan and others (2010, USGS Open-File Report 2010–1127) and the subsequent methodology modification and implementation documentation of Blondes, Brennan, and others (2013, USGS Open-File Report 2013–1055). The mean national TASR is approximately 3,000 metric gigatons (Gt). The estimate of the TASR includes buoyant trapping storage resources (BSR), where CO2 can be trapped in structural or stratigraphic closures, and residual trapping storage resources, where CO2 can be held in place by capillary pore pressures in areas outside of buoyant traps. The mean total national BSR is 44 Gt. The residual storage resource consists of three injectivity classes based on reservoir permeability: residual trapping class 1 storage resource (R1SR) represents storage in rocks with permeability greater than 1 darcy (D); residual trapping class 2 storage resource (R2SR) represents storage in rocks with moderate permeability, defined as permeability between 1 millidarcy (mD) and 1 D; and residual trapping class 3 storage resource (R3SR) represents storage in rocks with low permeability, defined as permeability less than 1 mD. The mean national storage resources for rocks in residual trapping classes 1, 2, and 3 are 140 Gt, 2,700 Gt, and 130 Gt, respectively. The known recovery replacement storage resource (KRRSR) is a conservative estimate that represents only the amount of CO2 at subsurface conditions that could replace the volume of known hydrocarbon production. The mean national KRRSR, determined from production volumes rather than the geologic model of buoyant and residual traps that make up TASR, is 13 Gt. The estimated storage resources are dominated by residual trapping class 2, which accounts for 89 percent of the total resources. The Coastal Plains Region of the United States contains the largest storage resource of any region. Within the Coastal Plains Region, the resources from the U.S. Gulf Coast area represent 59 percent of the national CO2 storage capacity.

40 CFR 147.304 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.304 Section 147.304 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Colorado § 147.304 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.904 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.904 Section 147.904 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Kentucky § 147.904 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.104 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.104 Section 147.104 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Alaska § 147.104 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.904 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.904 Section 147.904 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Kentucky § 147.904 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.1354 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.1354 Section 147.1354 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Montana § 147.1354 Existing Class II enhanced recovery and hydrocarbon... existing enhanced recovery or hydrocarbon storage well may not be in compliance with the requirements of...

40 CFR 147.1354 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.1354 Section 147.1354 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Montana § 147.1354 Existing Class II enhanced recovery and hydrocarbon... existing enhanced recovery or hydrocarbon storage well may not be in compliance with the requirements of...

40 CFR 147.104 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.104 Section 147.104 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Alaska § 147.104 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.304 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.304 Section 147.304 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Colorado § 147.304 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.503 - Existing Class II (except enhanced recovery and hydrocarbon storage) wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class II (except enhanced recovery and hydrocarbon storage) wells authorized by rule. 147.503 Section 147.503 Protection of... recovery and hydrocarbon storage) wells authorized by rule. Maximum injection pressure. To meet the...

40 CFR 147.503 - Existing Class II (except enhanced recovery and hydrocarbon storage) wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class II (except enhanced recovery and hydrocarbon storage) wells authorized by rule. 147.503 Section 147.503 Protection of... recovery and hydrocarbon storage) wells authorized by rule. Maximum injection pressure. To meet the...

A Cache Design to Exploit Structural Locality

DTIC Science & Technology

1991-12-01

memory and secondary storage. Main memory was used to store the instructions and data of an executing pro- gram, while secondary storage held programs ...efficiency of the CPU and faster turnaround of executing programs . In addition to the well known spatial and temporal aspects of locality, Hobart has...identified a third aspect, which he has called structural locality (9). This type of locality is defined as the tendency of an executing program to

Digitally programmable signal generator and method

DOEpatents

Priatko, G.J.; Kaskey, J.A.

1989-11-14

Disclosed is a digitally programmable waveform generator for generating completely arbitrary digital or analog waveforms from very low frequencies to frequencies in the gigasample per second range. A memory array with multiple parallel outputs is addressed; then the parallel output data is latched into buffer storage from which it is serially multiplexed out at a data rate many times faster than the access time of the memory array itself. While data is being multiplexed out serially, the memory array is accessed with the next required address and presents its data to the buffer storage before the serial multiplexing of the last group of data is completed, allowing this new data to then be latched into the buffer storage for smooth continuous serial data output. In a preferred implementation, a plurality of these serial data outputs are paralleled to form the input to a digital to analog converter, providing a programmable analog output. 6 figs.

Digitally programmable signal generator and method

DOEpatents

Priatko, Gordon J.; Kaskey, Jeffrey A.

1989-01-01

A digitally programmable waveform generator for generating completely arbitrary digital or analog waveforms from very low frequencies to frequencies in the gigasample per second range. A memory array with multiple parallel outputs is addressed; then the parallel output data is latched into buffer storage from which it is serially multiplexed out at a data rate many times faster than the access time of the memory array itself. While data is being multiplexed out serially, the memory array is accessed with the next required address and presents its data to the buffer storage before the serial multiplexing of the last group of data is completed, allowing this new data to then be latched into the buffer storage for smooth continuous serial data output. In a preferred implementation, a plurality of these serial data outputs are paralleled to form the input to a digital to analog converter, providing a programmable analog output.

Room Temperature Memory for Few Photon Polarization Qubits

NASA Astrophysics Data System (ADS)

Kupchak, Connor; Mittiga, Thomas; Jordan, Bertus; Nazami, Mehdi; Nolleke, Christian; Figueroa, Eden

2014-05-01

We have developed a room temperature quantum memory device based on Electromagnetically Induced Transparency capable of reliably storing and retrieving polarization qubits on the few photon level. Our system is realized in a vapor of 87Rb atoms utilizing a Λ-type energy level scheme. We create a dual-rail storage scheme mediated by an intense control field to allow storage and retrieval of any arbitrary polarization state. Upon retrieval, we employ a filtering system to sufficiently remove the strong pump field, and subject retrieved light states to polarization tomography. To date, our system has produced signal-to-noise ratios near unity with a memory fidelity of >80 % using coherent state qubits containing four photons on average. Our results thus demonstrate the feasibility of room temperature systems for the storage of single-photon-level photonic qubits. Such room temperature systems will be attractive for future long distance quantum communication schemes.

[Change in short-term memory in pupils of 5-7th classes in the process of class work].

PubMed

Rybakov, V P; Orlova, N I

2014-01-01

The subject of this study was the investigation of the short-term memory (STM) of visual (SVM) and auditory (SAM) modality in boys and girls of the middle school age, as in the daytime, and during the course of the school week. The obtained data show that in pupils from the 5th to the 7th class SVM and SAM playback volume in children of both genders is significantly increased, while SVM productivity in boys from 6 - 7th classes is higher than in girls of the same age. The amplitude of day changes in SVM and SAM was found to decrease significantly with the age. In all age groups the range of daily fluctuations in short-term memory of both modalities in boys appears to be higher than in girls. In all age groups a significant part of schoolchildren was revealed to possess optimal forms of temporal organization of short-term memory: morning, day and morning-day types, in that while during the school week in pupils of 5th to 7th classes of both genders the number of optimal waveforms of curves of daily dynamics of short-term memory increases, which contributes to the optimization of their mental performance.

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

NASA Astrophysics Data System (ADS)

Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

2018-02-01

Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

Low-Storage, Explicit Runge-Kutta Schemes for the Compressible Navier-Stokes Equations

NASA Technical Reports Server (NTRS)

Kennedy, Chistopher A.; Carpenter, Mark H.; Lewis, R. Michael

1999-01-01

The derivation of storage explicit Runge-Kutta (ERK) schemes has been performed in the context of integrating the compressible Navier-Stokes equations via direct numerical simulation. Optimization of ERK methods is done across the broad range of properties, such as stability and accuracy efficiency, linear and nonlinear stability, error control reliability, step change stability, and dissipation/dispersion accuracy, subject to varying degrees of memory economization. Following van der Houwen and Wray, 16 ERK pairs are presented using from two to five registers of memory per equation, per grid point and having accuracies from third- to fifth-order. Methods have been assessed using the differential equation testing code DETEST, and with the 1D wave equation. Two of the methods have been applied to the DNS of a compressible jet as well as methane-air and hydrogen-air flames. Derived 3(2) and 4(3) pairs are competitive with existing full-storage methods. Although a substantial efficiency penalty accompanies use of two- and three-register, fifth-order methods, the best contemporary full-storage methods can be pearl), matched while still saving two to three registers of memory.

Two Equals One: Two Human Actions During Social Interaction Are Grouped as One Unit in Working Memory.

PubMed

Ding, Xiaowei; Gao, Zaifeng; Shen, Mowei

2017-09-01

Every day, people perceive other people performing interactive actions. Retaining these actions of human agents in working memory (WM) plays a pivotal role in a normal social life. However, whether the semantic knowledge embedded in the interactive actions has a pervasive impact on the storage of the actions in WM remains unknown. In the current study, we investigated two opposing hypotheses: (a) that WM stores the interactions individually (the individual-storage hypothesis) and (b) that WM stores the interactions as chunks (the chunk-storage hypothesis). We required participants to memorize a set of individual actions while ignoring the underlying social interactions. We found that although the social-interaction aspect was task irrelevant, the interactive actions were stored in WM as chunks that were not affected by memory load (Experiments 1 and 2); however, inverting the human actions vertically abolished this chunking effect (Experiment 3). These results suggest that WM automatically and efficiently used semantic knowledge about interactive actions to store them and support the chunk-storage hypothesis.

Strategic trade-offs between quality and quantity in working memory

PubMed Central

Fougnie, Daryl; Cormiea, Sarah M.; Kanabar, Anish; Alvarez, George A.

2016-01-01

Is working memory capacity determined by an immutable limit—e.g. four memory storage slots? The fact that performance is typically unaffected by task instructions has been taken as support for such structural models of memory. Here, we modified a standard working memory task to incentivize participants to remember more items. Participants were asked to remember a set of colors over a short retention interval. In one condition, participants reported a random item’s color using a color wheel. In the modified task, participants responded to all items and their response was only considered correct if all responses were on the correct half of the color wheel. We looked for a trade-off between quantity and quality—participants storing more items, but less precisely, when required to report them all. This trade-off was observed when tasks were blocked, when task-type was cued after encoding, but not when task-type was cued during the response, suggesting that task differences changed how items were actively encoded and maintained. This strategic control over the contents of working memory challenges models that assume inflexible limits on memory storage. PMID:26950383

A neural measure of precision in visual working memory.

PubMed

Ester, Edward F; Anderson, David E; Serences, John T; Awh, Edward

2013-05-01

Recent studies suggest that the temporary storage of visual detail in working memory is mediated by sensory recruitment or sustained patterns of stimulus-specific activation within feature-selective regions of visual cortex. According to a strong version of this hypothesis, the relative "quality" of these patterns should determine the clarity of an individual's memory. Here, we provide a direct test of this claim. We used fMRI and a forward encoding model to characterize population-level orientation-selective responses in visual cortex while human participants held an oriented grating in memory. This analysis, which enables a precise quantitative description of multivoxel, population-level activity measured during working memory storage, revealed graded response profiles whose amplitudes were greatest for the remembered orientation and fell monotonically as the angular distance from this orientation increased. Moreover, interparticipant differences in the dispersion-but not the amplitude-of these response profiles were strongly correlated with performance on a concurrent memory recall task. These findings provide important new evidence linking the precision of sustained population-level responses in visual cortex and memory acuity.

Visual and spatial working memory are not that dissociated after all: a time-based resource-sharing account.

PubMed

Vergauwe, Evie; Barrouillet, Pierre; Camos, Valérie

2009-07-01

Examinations of interference between visual and spatial materials in working memory have suggested domain- and process-based fractionations of visuo-spatial working memory. The present study examined the role of central time-based resource sharing in visuo-spatial working memory and assessed its role in obtained interference patterns. Visual and spatial storage were combined with both visual and spatial on-line processing components in computer-paced working memory span tasks (Experiment 1) and in a selective interference paradigm (Experiment 2). The cognitive load of the processing components was manipulated to investigate its impact on concurrent maintenance for both within-domain and between-domain combinations of processing and storage components. In contrast to both domain- and process-based fractionations of visuo-spatial working memory, the results revealed that recall performance was determined by the cognitive load induced by the processing of items, rather than by the domain to which those items pertained. These findings are interpreted as evidence for a time-based resource-sharing mechanism in visuo-spatial working memory.

Sequence memory based on coherent spin-interaction neural networks.

PubMed

Xia, Min; Wong, W K; Wang, Zhijie

2014-12-01

Sequence information processing, for instance, the sequence memory, plays an important role on many functions of brain. In the workings of the human brain, the steady-state period is alterable. However, in the existing sequence memory models using heteroassociations, the steady-state period cannot be changed in the sequence recall. In this work, a novel neural network model for sequence memory with controllable steady-state period based on coherent spininteraction is proposed. In the proposed model, neurons fire collectively in a phase-coherent manner, which lets a neuron group respond differently to different patterns and also lets different neuron groups respond differently to one pattern. The simulation results demonstrating the performance of the sequence memory are presented. By introducing a new coherent spin-interaction sequence memory model, the steady-state period can be controlled by dimension parameters and the overlap between the input pattern and the stored patterns. The sequence storage capacity is enlarged by coherent spin interaction compared with the existing sequence memory models. Furthermore, the sequence storage capacity has an exponential relationship to the dimension of the neural network.

A Synaptic Basis for Memory Storage in the Cerebral Cortex

NASA Astrophysics Data System (ADS)

Bear, Mark F.

1996-11-01

A cardinal feature of neurons in the cerebral cortex is stimulus selectivity, and experience-dependent shifts in selectivity are a common correlate of memory formation. We have used a theoretical ``learning rule,'' devised to account for experience-dependent shifts in neuronal selectivity, to guide experiments on the elementary mechanisms of synaptic plasticity in hippocampus and neocortex. These experiments reveal that many synapses in hippocampus and neocortex are bidirectionally modifiable, that the modifications persist long enough to contribute to long-term memory storage, and that key variables governing the sign of synaptic plasticity are the amount of NMDA receptor activation and the recent history of cortical activity.

Precision spectral manipulation of optical pulses using a coherent photon echo memory.

PubMed

Buchler, B C; Hosseini, M; Hétet, G; Sparkes, B M; Lam, P K

2010-04-01

Photon echo schemes are excellent candidates for high efficiency coherent optical memory. They are capable of high-bandwidth multipulse storage, pulse resequencing and have been shown theoretically to be compatible with quantum information applications. One particular photon echo scheme is the gradient echo memory (GEM). In this system, an atomic frequency gradient is induced in the direction of light propagation leading to a Fourier decomposition of the optical spectrum along the length of the storage medium. This Fourier encoding allows precision spectral manipulation of the stored light. In this Letter, we show frequency shifting, spectral compression, spectral splitting, and fine dispersion control of optical pulses using GEM.

Optical memory development. Volume 2: Gain-assisted holographic storage media

NASA Technical Reports Server (NTRS)

Gange, R. A.; Mezrich, R. S.

1972-01-01

Thin deformable films were investigated for use as the storage medium in a holographic optical memory. The research was directed toward solving the problems of material fatigue, selective heat addressing, electrical charging of the film surface and charge patterning by light. A number of solutions to these problems were found but the main conclusion to be drawn from the work is that deformable media which employ heat in the recording process are not satisfactory for use in a high-speed random-access read/write holographic memory. They are, however, a viable approach in applications where either high speed or random-access is not required.

Scalable quantum memory in the ultrastrong coupling regime.

PubMed

Kyaw, T H; Felicetti, S; Romero, G; Solano, E; Kwek, L-C

2015-03-02

Circuit quantum electrodynamics, consisting of superconducting artificial atoms coupled to on-chip resonators, represents a prime candidate to implement the scalable quantum computing architecture because of the presence of good tunability and controllability. Furthermore, recent advances have pushed the technology towards the ultrastrong coupling regime of light-matter interaction, where the qubit-resonator coupling strength reaches a considerable fraction of the resonator frequency. Here, we propose a qubit-resonator system operating in that regime, as a quantum memory device and study the storage and retrieval of quantum information in and from the Z2 parity-protected quantum memory, within experimentally feasible schemes. We are also convinced that our proposal might pave a way to realize a scalable quantum random-access memory due to its fast storage and readout performances.

Scalable quantum memory in the ultrastrong coupling regime

PubMed Central

Kyaw, T. H.; Felicetti, S.; Romero, G.; Solano, E.; Kwek, L.-C.

2015-01-01

Circuit quantum electrodynamics, consisting of superconducting artificial atoms coupled to on-chip resonators, represents a prime candidate to implement the scalable quantum computing architecture because of the presence of good tunability and controllability. Furthermore, recent advances have pushed the technology towards the ultrastrong coupling regime of light-matter interaction, where the qubit-resonator coupling strength reaches a considerable fraction of the resonator frequency. Here, we propose a qubit-resonator system operating in that regime, as a quantum memory device and study the storage and retrieval of quantum information in and from the Z2 parity-protected quantum memory, within experimentally feasible schemes. We are also convinced that our proposal might pave a way to realize a scalable quantum random-access memory due to its fast storage and readout performances. PMID:25727251

Cyclic Nucleotide-Gated Channels, Calmodulin, Adenylyl Cyclase, and Calcium/Calmodulin-Dependent Protein Kinase II Are Required for Late, but Not Early, Long-Term Memory Formation in the Honeybee

ERIC Educational Resources Information Center

Matsumoto, Yukihisa; Sandoz, Jean-Christophe; Devaud, Jean-Marc; Lormant, Flore; Mizunami, Makoto; Giurfa, Martin

2014-01-01

Memory is a dynamic process that allows encoding, storage, and retrieval of information acquired through individual experience. In the honeybee "Apis mellifera," olfactory conditioning of the proboscis extension response (PER) has shown that besides short-term memory (STM) and mid-term memory (MTM), two phases of long-term memory (LTM)…

Factorization in large-scale many-body calculations

DOE PAGES

Johnson, Calvin W.; Ormand, W. Erich; Krastev, Plamen G.

2013-08-07

One approach for solving interacting many-fermion systems is the configuration-interaction method, also sometimes called the interacting shell model, where one finds eigenvalues of the Hamiltonian in a many-body basis of Slater determinants (antisymmetrized products of single-particle wavefunctions). The resulting Hamiltonian matrix is typically very sparse, but for large systems the nonzero matrix elements can nonetheless require terabytes or more of storage. An alternate algorithm, applicable to a broad class of systems with symmetry, in our case rotational invariance, is to exactly factorize both the basis and the interaction using additive/multiplicative quantum numbers; such an algorithm recreates the many-body matrix elementsmore » on the fly and can reduce the storage requirements by an order of magnitude or more. Here, we discuss factorization in general and introduce a novel, generalized factorization method, essentially a ‘double-factorization’ which speeds up basis generation and set-up of required arrays. Although we emphasize techniques, we also place factorization in the context of a specific (unpublished) configuration-interaction code, BIGSTICK, which runs both on serial and parallel machines, and discuss the savings in memory due to factorization.« less

Allograft dendritic cell p40 homodimers activate donor-reactive memory CD8+ T cells

PubMed Central

Tsuda, Hidetoshi; Su, Charles A.; Tanaka, Toshiaki; Ayasoufi, Katayoun; Min, Booki; Valujskikh, Anna; Fairchild, Robert L.

2018-01-01

Recipient endogenous memory T cells with donor reactivity pose an important barrier to successful transplantation and costimulatory blockade–induced graft tolerance. Longer ischemic storage times prior to organ transplantation increase early posttransplant inflammation and negatively impact early graft function and long-term graft outcome. Little is known about the mechanisms enhancing endogenous memory T cell activation to mediate tissue injury within the increased inflammatory environment of allografts subjected to prolonged cold ischemic storage (CIS). Endogenous memory CD4+ and CD8+ T cell activation is markedly increased within complete MHC-mismatched cardiac allografts subjected to prolonged versus minimal CIS, and the memory CD8+ T cells directly mediate CTLA-4Ig–resistant allograft rejection. Memory CD8+ T cell activation within allografts subjected to prolonged CIS requires memory CD4+ T cell stimulation of graft DCs to produce p40 homodimers, but not IL-12 p40/p35 heterodimers. Targeting p40 abrogates memory CD8+ T cell proliferation within the allografts and their ability to mediate CTLA-4Ig–resistant allograft rejection. These findings indicate a critical role for memory CD4+ T cell–graft DC interactions to increase the intensity of endogenous memory CD8+ T cell activation needed to mediate rejection of higher-risk allografts subjected to increased CIS. PMID:29467328

Real-time associative memory with photorefractive crystal KNSBN and liquid-crystal optical switches

NASA Astrophysics Data System (ADS)

Xu, Haiying; Yuan, Yang Y.; Yu, Youlong; Xu, Kebin; Xu, Yuhuan; Zhu, De-Rui

1990-05-01

We present a real-time holographic associative memory implemented with photorefractive KNSBN : Co crystal as memory element and liquid crystal electrooptical switches as reflective thresholding device. The experimental results show that the system has real-time multiple-image storage and recall function.

Infants Hierarchically Organize Memory Representations

ERIC Educational Resources Information Center

Rosenberg, Rebecca D.; Feigenson, Lisa

2013-01-01

Throughout development, working memory is subject to capacity limits that severely constrain short-term storage. However, adults can massively expand the total amount of remembered information by grouping items into "chunks". Although infants also have been shown to chunk objects in memory, little is known regarding the limits of this…

Time, Language, and Autobiographical Memory

ERIC Educational Resources Information Center

Burt, Christopher D. B.

2008-01-01

Life themes, general events, and event-specific episodes, together with autobiographical knowledge, form autobiographical memory. Each of these memory structures is described, and research that has investigated the storage and retrieval of temporal information for life events, such as place in time, duration, and order, is examined. The general…

An energy efficient and high speed architecture for convolution computing based on binary resistive random access memory

NASA Astrophysics Data System (ADS)

Liu, Chen; Han, Runze; Zhou, Zheng; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

2018-04-01

In this work we present a novel convolution computing architecture based on metal oxide resistive random access memory (RRAM) to process the image data stored in the RRAM arrays. The proposed image storage architecture shows performances of better speed-device consumption efficiency compared with the previous kernel storage architecture. Further we improve the architecture for a high accuracy and low power computing by utilizing the binary storage and the series resistor. For a 28 × 28 image and 10 kernels with a size of 3 × 3, compared with the previous kernel storage approach, the newly proposed architecture shows excellent performances including: 1) almost 100% accuracy within 20% LRS variation and 90% HRS variation; 2) more than 67 times speed boost; 3) 71.4% energy saving.

At the Intersection of Attention and Memory: The Mechanistic Role of the Posterior Parietal Lobe in Working Memory

ERIC Educational Resources Information Center

Berryhill, Marian E.; Chein, Jason; Olson, Ingrid R.

2011-01-01

Portions of the posterior parietal cortex (PPC) play a role in working memory (WM) yet the precise mechanistic function of this region remains poorly understood. The "pure storage" hypothesis proposes that this region functions as a short-lived modality-specific memory store. Alternatively, the "internal attention" hypothesis proposes that the PPC…

Decoding complex flow-field patterns in visual working memory.

PubMed

Christophel, Thomas B; Haynes, John-Dylan

2014-05-01

There has been a long history of research on visual working memory. Whereas early studies have focused on the role of lateral prefrontal cortex in the storage of sensory information, this has been challenged by research in humans that has directly assessed the encoding of perceptual contents, pointing towards a role of visual and parietal regions during storage. In a previous study we used pattern classification to investigate the storage of complex visual color patterns across delay periods. This revealed coding of such contents in early visual and parietal brain regions. Here we aim to investigate whether the involvement of visual and parietal cortex is also observable for other types of complex, visuo-spatial pattern stimuli. Specifically, we used a combination of fMRI and multivariate classification to investigate the retention of complex flow-field stimuli defined by the spatial patterning of motion trajectories of random dots. Subjects were trained to memorize the precise spatial layout of these stimuli and to retain this information during an extended delay. We used a multivariate decoding approach to identify brain regions where spatial patterns of activity encoded the memorized stimuli. Content-specific memory signals were observable in motion sensitive visual area MT+ and in posterior parietal cortex that might encode spatial information in a modality independent manner. Interestingly, we also found information about the memorized visual stimulus in somatosensory cortex, suggesting a potential crossmodal contribution to memory. Our findings thus indicate that working memory storage of visual percepts might be distributed across unimodal, multimodal and even crossmodal brain regions. Copyright © 2014 Elsevier Inc. All rights reserved.

40 CFR 147.1154 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.1154 Section 147.1154 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Michigan § 147.1154 Existing Class II enhanced recovery and hydrocarbon... determines that the owner or operator of an existing enhanced recovery or hydrocarbon storage will may not be...

40 CFR 147.1454 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.1454 Section 147.1454 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Nevada § 147.1454 Existing Class II enhanced recovery and hydrocarbon... determines that the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be...

40 CFR 147.1454 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.1454 Section 147.1454 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Nevada § 147.1454 Existing Class II enhanced recovery and hydrocarbon... determines that the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be...

40 CFR 147.1654 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and hydrocarbon storage wells authorized by rule. 147.1654 Section 147.1654 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS New York § 147.1654 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.1953 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1953 Section 147.1953 Protection of... enhanced recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure...

40 CFR 147.1154 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.1154 Section 147.1154 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS Michigan § 147.1154 Existing Class II enhanced recovery and hydrocarbon... determines that the owner or operator of an existing enhanced recovery or hydrocarbon storage will may not be...

40 CFR 147.1654 - Existing Class II enhanced recovery and hydrocarbon storage wells authorized by rule.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and hydrocarbon storage wells authorized by rule. 147.1654 Section 147.1654 Protection of Environment... UNDERGROUND INJECTION CONTROL PROGRAMS New York § 147.1654 Existing Class II enhanced recovery and hydrocarbon... the owner or operator of an existing enhanced recovery or hydrocarbon storage well may not be in...

40 CFR 147.1953 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1953 Section 147.1953 Protection of... enhanced recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure...

Some Considerations Necessary for a Viable Theory of Human Memory.

ERIC Educational Resources Information Center

Sietsema, Douglas J.

Empirical research is reviewed in the area of cognitive psychology pertaining to models of human memory. Research evidence and theoretical considerations are combined to develop guidelines for future theory development related to the human memory. The following theoretical constructs and variables are discussed: (1) storage versus process…

The Cognitive and Neural Correlates of Tactile Memory

ERIC Educational Resources Information Center

Gallace, Alberto; Spence, Charles

2009-01-01

Tactile memory systems are involved in the storage and retrieval of information about stimuli that impinge on the body surface and objects that people explore haptically. Here, the authors review the behavioral, neuropsychological, neurophysiological, and neuroimaging research on tactile memory. This body of research reveals that tactile memory…

Visuospatial Immediate Memory in Specific Language Impairment

ERIC Educational Resources Information Center

Archibald, Lisa M. D.; Gathercole, Susan E.

2006-01-01

Purpose: Investigations of the cognitive processes underlying specific language impairment (SLI) have implicated deficits in verbal short-term and working memory and in particular the storage and processing of phonological information. This study investigated short-term and working memory for visuospatial material for a group of children with SLI,…

Effects of Serial Rehearsal Training on Memory Search

ERIC Educational Resources Information Center

McCauley, Charley; And Others

1976-01-01

Half the subjects were trained to use a serial rehearsal strategy during target set storage and half were given no strategy training. The results indicate that the rate of memory search is IQ-related, and that serial rehearsal training facilitates memory search when rehearsal is covert. (Author/BW)

Reexamining the Relationship between Working Memory and Comprehension: The Role of Available Long-Term Memory

ERIC Educational Resources Information Center

Was, Christopher A.; Woltz, Dan J.

2007-01-01

Two individual differences studies tested relationships between listening comprehension and two conceptualizations of working memory (WM) capacity. Recently, some theorists have stressed that the empirically indicated limits of rehearsal-based WM storage components are inconsistent with the amounts of information needed to accomplish complex…

Experimental Optoelectronic Associative Memory

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

1992-01-01

Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

An Approach toward the Development of a Functional Encoding Model of Short Term Memory during Reading.

ERIC Educational Resources Information Center

Herndon, Mary Anne

1978-01-01

In a model of the functioning of short term memory, the encoding of information for subsequent storage in long term memory is simulated. In the encoding process, semantically equivalent paragraphs are detected for recombination into a macro information unit. (HOD)

Fabrication and characterization of shape memory polymers at small-scales

NASA Astrophysics Data System (ADS)

Wornyo, Edem

The objective of this research is to thoroughly investigate the shape memory effect in polymers, characterize, and optimize these polymers for applications in information storage systems. Previous research effort in this field concentrated on shape memory metals for biomedical applications such as stents. Minimal work has been done on shape memory polymers; and the available work on shape memory polymers has not characterized the behaviors of this category of polymers fully. Copolymer shape memory materials based on diethylene glycol dimethacrylate (DEGDMA) crosslinker, and tert butyl acrylate (tBA) monomer are designed. The design encompasses a careful control of the backbone chemistry of the materials. Characterization methods such as dynamic mechanical analysis (DMA), differential scanning calorimetry (DSC); and novel nanoscale techniques such as atomic force microscopy (AFM), and nanoindentation are applied to this system of materials. Designed experiments are conducted on the materials to optimize spin coating conditions for thin films. Furthermore, the recovery, a key for the use of these polymeric materials for information storage, is examined in detail with respect to temperature. In sum, the overarching objectives of the proposed research are to: (i) Design shape memory polymers based on polyethylene glycol dimethacrylate (PEGDMA) and diethylene glycol dimethacrylate (DEGDMA) crosslinkers, 2-hydroxyethyl methacrylate (HEMA) and tert-butyl acrylate monomer (tBA). (ii) Utilize dynamic mechanical analysis (DMA) to comprehend the thermomechanical properties of shape memory polymers based on DEGDMA and tBA. (iii) Utilize nanoindentation and atomic force microscopy (AFM) to understand the nanoscale behavior of these SMPs, and explore the strain storage and recovery of the polymers from a deformed state. (iv) Study spin coating conditions on thin film quality with designed experiments. (iv) Apply neural networks and genetic algorithms to optimize these systems.

Cortical rewiring and information storage

NASA Astrophysics Data System (ADS)

Chklovskii, D. B.; Mel, B. W.; Svoboda, K.

2004-10-01

Current thinking about long-term memory in the cortex is focused on changes in the strengths of connections between neurons. But ongoing structural plasticity in the adult brain, including synapse formation/elimination and remodelling of axons and dendrites, suggests that memory could also depend on learning-induced changes in the cortical `wiring diagram'. Given that the cortex is sparsely connected, wiring plasticity could provide a substantial boost in storage capacity, although at a cost of more elaborate biological machinery and slower learning.

Radiation Effects on Advanced Flash Memories

NASA Technical Reports Server (NTRS)

Nguyen, D. N.; Guertin, S.; Swift, G. M.; Johnston, A. H.

1998-01-01

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

Optical memory system technology. Citations from the International Aerospace Abstracts data base

NASA Technical Reports Server (NTRS)

Zollars, G. F.

1980-01-01

Approximately 213 citations from the international literature which concern the development of the optical data storage system technology are presented. Topics covered include holographic computer storage devices, crystal, magneto, and electro-optics, imaging techniques, in addition to optical data processing and storage.

The contribution of acetylcholine and dopamine to subprocesses of visual working memory--what patients with amnestic mild cognitive impairment and Parkinson׳s disease can tell us.

PubMed

Blatt, Joana; Vellage, Anne; Baier, Bernhard; Müller, Notger G

2014-08-01

Attentional selection, i.e. filtering out of irrelevant sensory input and information storage are two crucial components of working memory (WM). It has been proposed that the two processes are mediated by different neurotransmitters, namely acetylcholine for attentional selection and dopamine for memory storage. However, this hypothesis has been challenged by others, who for example linked a lack in dopamine levels in the brain to filtering deficits. Here we tested the above mentioned hypothesis in two patient cohorts which either served as a proxy for a cholinergic or a dopaminergic deficit. The first group comprised 18 patients with amnestic mild cognitive impairment (aMCI), the second 22 patients with Parkinson׳s disease (PD). The two groups did not differ regarding their overall cognitive abilities. Both patient groups as well as a control group without neurological deficits (n=25) performed a visuo-spatial working memory task in which both the necessity to filter out irrelevant information and memory load, i.e. the number of items to be held in memory, were manipulated. In accordance with the primary hypothesis, aMCI patients displayed problems with filtering, i.e., were especially impaired when the task required ignoring distracting stimuli. PD patients on the other hand showed difficulties when memory load was increased suggesting that they mainly suffered from a storage deficit. In sum, this study underlines how the investigation of neurologic patients with a presumed neurotransmitter deficit can aid to clarify these neurotransmitters׳ contribution to specific cognitive functions. Copyright © 2014 Elsevier Ltd. All rights reserved.

Contributions of volumetrics of the hippocampus and thalamus to verbal memory in temporal lobe epilepsy patients.

PubMed

Stewart, Christopher C; Griffith, H Randall; Okonkwo, Ozioma C; Martin, Roy C; Knowlton, Robert K; Richardson, Elizabeth J; Hermann, Bruce P; Seidenberg, Michael

2009-02-01

Recent theories have posited that the hippocampus and thalamus serve distinct, yet related, roles in episodic memory. Whereas the hippocampus has been implicated in long-term memory encoding and storage, the thalamus, as a whole, has been implicated in the selection of items for subsequent encoding and the use of retrieval strategies. However, dissociating the memory impairment that occurs following thalamic injury as distinguished from that following hippocampal injury has proven difficult. This study examined relationships between MRI volumetric measures of the hippocampus and thalamus and their contributions to prose and rote verbal memory functioning in 18 patients with intractable temporal lobe epilepsy (TLE). Results revealed that bilateral hippocampal and thalamic volume independently predicted delayed prose verbal memory functioning. However, bilateral hippocampal, but not thalamic, volume predicted delayed rote verbal memory functioning. Follow-up analyses indicated that bilateral thalamic volume independently predicted immediate prose, but not immediate rote, verbal recall, whereas bilateral hippocampal volume was not associated with any of these immediate memory measures. These findings underscore the cognitive significance of thalamic atrophy in chronic TLE, demonstrating that hippocampal and thalamic volume make quantitatively, and perhaps qualitatively, distinct contributions to episodic memory functioning in TLE patients. They are also consistent with theories proposing that the hippocampus supports long-term memory encoding and storage, whereas the thalamus is implicated in the executive aspects of episodic memory.

CLOCS (Computer with Low Context-Switching Time) Architecture Reference Documents

DTIC Science & Technology

1988-05-06

Peculiarities The only state inside the central processing unit(CPU) is a program status word. All data operations are memory to memory. One result of this... to the challenge "if I whore to design RISC, this is how I would do it." The architecture was designed by Mark Davis and Bill Gallmeister. 1.2...are memory to memory. Any special devices added should be memory mapped. The program counter is even memory mapped. 1.3.1 Working storage There is no

Storing and managing information artifacts collected by information analysts using a computing device

DOEpatents

Pike, William A; Riensche, Roderick M; Best, Daniel M; Roberts, Ian E; Whyatt, Marie V; Hart, Michelle L; Carr, Norman J; Thomas, James J

2012-09-18

Systems and computer-implemented processes for storage and management of information artifacts collected by information analysts using a computing device. The processes and systems can capture a sequence of interactive operation elements that are performed by the information analyst, who is collecting an information artifact from at least one of the plurality of software applications. The information artifact can then be stored together with the interactive operation elements as a snippet on a memory device, which is operably connected to the processor. The snippet comprises a view from an analysis application, data contained in the view, and the sequence of interactive operation elements stored as a provenance representation comprising operation element class, timestamp, and data object attributes for each interactive operation element in the sequence.

10 CFR 72.128 - Criteria for spent fuel, high-level radioactive waste, reactor-related greater than Class C waste...

Code of Federal Regulations, 2010 CFR

2010-01-01

..., reactor-related greater than Class C waste, and other radioactive waste storage and handling. 72.128... STORAGE OF SPENT NUCLEAR FUEL, HIGH-LEVEL RADIOACTIVE WASTE, AND REACTOR-RELATED GREATER THAN CLASS C WASTE General Design Criteria § 72.128 Criteria for spent fuel, high-level radioactive waste, reactor...

10 CFR 72.128 - Criteria for spent fuel, high-level radioactive waste, reactor-related greater than Class C waste...

Code of Federal Regulations, 2011 CFR

2011-01-01

..., reactor-related greater than Class C waste, and other radioactive waste storage and handling. 72.128... STORAGE OF SPENT NUCLEAR FUEL, HIGH-LEVEL RADIOACTIVE WASTE, AND REACTOR-RELATED GREATER THAN CLASS C WASTE General Design Criteria § 72.128 Criteria for spent fuel, high-level radioactive waste, reactor...

A new pattern associative memory model for image recognition based on Hebb rules and dot product

NASA Astrophysics Data System (ADS)

Gao, Mingyue; Deng, Limiao; Wang, Yanjiang

2018-04-01

A great number of associative memory models have been proposed to realize information storage and retrieval inspired by human brain in the last few years. However, there is still much room for improvement for those models. In this paper, we extend a binary pattern associative memory model to accomplish real-world image recognition. The learning process is based on the fundamental Hebb rules and the retrieval is implemented by a normalized dot product operation. Our proposed model can not only fulfill rapid memory storage and retrieval for visual information but also have the ability on incremental learning without destroying the previous learned information. Experimental results demonstrate that our model outperforms the existing Self-Organizing Incremental Neural Network (SOINN) and Back Propagation Neuron Network (BPNN) on recognition accuracy and time efficiency.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

NASA Astrophysics Data System (ADS)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Single-photon-level quantum image memory based on cold atomic ensembles

PubMed Central

Ding, Dong-Sheng; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2013-01-01

A quantum memory is a key component for quantum networks, which will enable the distribution of quantum information. Its successful development requires storage of single-photon light. Encoding photons with spatial shape through higher-dimensional states significantly increases their information-carrying capability and network capacity. However, constructing such quantum memories is challenging. Here we report the first experimental realization of a true single-photon-carrying orbital angular momentum stored via electromagnetically induced transparency in a cold atomic ensemble. Our experiments show that the non-classical pair correlation between trigger photon and retrieved photon is retained, and the spatial structure of input and retrieved photons exhibits strong similarity. More importantly, we demonstrate that single-photon coherence is preserved during storage. The ability to store spatial structure at the single-photon level opens the possibility for high-dimensional quantum memories. PMID:24084711

ERP C250 shows the elderly (cognitively normal, Alzheimer's disease) store more stimuli in short-term memory than Young Adults do.

PubMed

Chapman, Robert M; Gardner, Margaret N; Mapstone, Mark; Klorman, Rafael; Porsteinsson, Anton P; Dupree, Haley M; Antonsdottir, Inga M; Kamalyan, Lily

2016-06-01

To determine how aging and dementia affect the brain's initial storing of task-relevant and irrelevant information in short-term memory. We used brain Event-Related Potentials (ERPs) to measure short-term memory storage (ERP component C250) in 36 Young Adults, 36 Normal Elderly, and 36 early-stage AD subjects. Participants performed the Number-Letter task, a cognitive paradigm requiring memory storage of a first relevant stimulus to compare it with a second stimulus. In Young Adults, C250 was more positive for the first task-relevant stimulus compared to all other stimuli. C250 in Normal Elderly and AD subjects was roughly the same to relevant and irrelevant stimuli in Intratrial Parts 1-3 but not 4. The AD group had lower C250 to relevant stimuli in part 1. Both normal aging and dementia cause less differentiation of relevant from irrelevant information in initial storage. There was a large aging effect involving differences in the pattern of C250 responses of the Young Adult versus the Normal Elderly/AD groups. Also, a potential dementia effect was obtained. C250 is a candidate tool for measuring short-term memory performance on a biological level, as well as a potential marker for memory changes due to normal aging and dementia. Copyright © 2016 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

If It Is Stored in My Memory I Will Surely Retrieve It: Anatomy of a Metacognitive Belief

ERIC Educational Resources Information Center

Kornell, Nate

2015-01-01

Retrieval failures--moments when a memory will not come to mind--are a universal human experience. Yet many laypeople believe human memory is a reliable storage system in which a stored memory should be accessible. I predicted that people would see retrieval failures as aberrations and predict that fewer retrieval failures would happen in the…

Modelling the effects of Prairie wetlands on streamflow

NASA Astrophysics Data System (ADS)

Shook, K.; Pomeroy, J. W.

2015-12-01

Recent research has demonstrated that the contributing areas of Prairie streams dominated by depressional (wetland) storage demonstrate hysteresis with respect to catchment water storage. As such contributing fractions can vary over time from a very small percentage of catchment area to the entire catchment during floods. However, catchments display complex memories of past storage states and their contributing fractions cannot be modelled accurately by any single-valued function. The Cold Regions Hydrological Modelling platform, CRHM, which is capable of modelling all of the hydrological processes of cold regions using a hydrological response unit discretization of the catchment, was used to further investigate dynamical contributing area response to hydrological processes. Contributing fraction in CRHM is also controlled by the episodic nature of runoff generation in this cold, sub-humid environment where runoff is dominated by snowmelt over frozen soils, snowdrifts define the contributing fraction in late spring, unfrozen soils have high water holding capacity and baseflow from sub-surface flow does not exist. CRHM was improved by adding a conceptual model of individual Prairie depression fill and spill runoff generation that displays hysteresis in the storage - contributing fraction relationship and memory of storage state. The contributing area estimated by CRHM shows strong sensitivity to hydrological inputs, storage and the threshold runoff rate chosen. The response of the contributing area to inputs from various runoff generating processes from snowmelt to rain-on-snow to rainfall with differing degrees of spatial variation was investigated as was the importance of the memory of storage states on streamflow generation. The importance of selecting hydrologically and ecologically meaningful runoff thresholds in estimating contributing area is emphasized.

40 CFR 147.903 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.903 Section 147.903 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1653 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1653 Section 147.1653 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.303 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.303 Section 147.303 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.2153 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.2153 Section 147.2153 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.103 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.103 Section 147.103 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.903 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.903 Section 147.903 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.303 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.303 Section 147.303 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.253 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.253 Section 147.253 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1353 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1353 Section 147.1353 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1453 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1453 Section 147.1453 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1153 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1153 Section 147.1153 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1353 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1353 Section 147.1353 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.253 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.253 Section 147.253 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.103 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.103 Section 147.103 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1653 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1653 Section 147.1653 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1153 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1153 Section 147.1153 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.1453 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 22 2010-07-01 2010-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.1453 Section 147.1453 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

40 CFR 147.2153 - Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 23 2011-07-01 2011-07-01 false Existing Class I, II (except enhanced recovery and hydrocarbon storage) and III wells authorized by rule. 147.2153 Section 147.2153 Protection of... recovery and hydrocarbon storage) and III wells authorized by rule. Maximum injection pressure. The owner...

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

NASA Astrophysics Data System (ADS)

Sleiman, A.; Rosamond, M. C.; Alba Martin, M.; Ayesh, A.; Al Ghaferi, A.; Gallant, A. J.; Mabrook, M. F.; Zeze, D. A.

2012-01-01

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (˜9.15 × 1011 cm-2) and demonstrated 94% charge retention due to the superior encapsulation.

Ferroelectric symmetry-protected multibit memory cell

NASA Astrophysics Data System (ADS)

Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

2017-02-01

The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Lingda; Hayes, Ari; Song, Shuaiwen

Modern GPUs employ cache to improve memory system efficiency. However, large amount of cache space is underutilized due to irregular memory accesses and poor spatial locality which exhibited commonly in GPU applications. Our experiments show that using smaller cache lines could improve cache space utilization, but it also frequently suffers from significant performance loss by introducing large amount of extra cache requests. In this work, we propose a novel cache design named tag-split cache (TSC) that enables fine-grained cache storage to address the problem of cache space underutilization while keeping memory request number unchanged. TSC divides tag into two partsmore » to reduce storage overhead, and it supports multiple cache line replacement in one cycle.« less

Software Engineering Principles 3-14 August 1981,

DTIC Science & Technology

1981-08-01

small disk used (but rot that of the extended mass storage or large disk option); it is very fast (about 1/5 the speed of the primary memory, where the...extended mass storage or large disk option); it is very fast (about 1/5 the speed of the primary memory, where the disk was 1/10000 for access); and...programed and tested - must be correct and fast D. Choice of right synchronization operations: Design problem 1. Several mentioned in literature 9-22

High storage capacity in the Hopfield model with auto-interactions—stability analysis

NASA Astrophysics Data System (ADS)

Rocchi, Jacopo; Saad, David; Tantari, Daniele

2017-11-01

Recent studies point to the potential storage of a large number of patterns in the celebrated Hopfield associative memory model, well beyond the limits obtained previously. We investigate the properties of new fixed points to discover that they exhibit instabilities for small perturbations and are therefore of limited value as associative memories. Moreover, a large deviations approach also shows that errors introduced to the original patterns induce additional errors and increased corruption with respect to the stored patterns.

Twisting Tongues and Memories: Explorations of the Relationship between Language Production and Verbal Working Memory

ERIC Educational Resources Information Center

Acheson, Daniel J.; MacDonald, Maryellen C.

2009-01-01

Many accounts of working memory posit specialized storage mechanisms for the maintenance of serial order. We explore an alternative, that maintenance is achieved through temporary activation in the language production architecture. Four experiments examined the extent to which the phonological similarity effect can be explained as a sublexical…

The Roles of Working Memory and Cognitive Load in Geoscience Learning

ERIC Educational Resources Information Center

Jaeger, Allison J.; Shipley, Thomas F.; Reynolds, Stephen J.

2017-01-01

Working memory is a cognitive system that allows for the simultaneous storage and processing of active information. While working memory has been implicated as an important element for success in many science, technology, engineering, and mathematics (STEM) fields, its specific role in geoscience learning is not fully understood. The major goal of…

Working Memory and Fluid Intelligence in Young Children

ERIC Educational Resources Information Center

Engel de Abreu, Pascale M. J.; Conway, Andrew R. A.; Gathercole, Susan E.

2010-01-01

The present study investigates how working memory and fluid intelligence are related in young children and how these links develop over time. The major aim is to determine which aspect of the working memory system--short-term storage or cognitive control--drives the relationship with fluid intelligence. A sample of 119 children was followed from…

An outline for the analysis of dementia. The memory disorder of Huntingtons disease.

PubMed

Caine, E D; Ebert, M H; Weingartner, H

1977-11-01

Methods have been developed for assessing the cognitive parameters contributing to a memory disorder. Our findings suggest that individuals with Huntington disease have impairments in the encoding of new information and the consistent retrieval from storage of learned material. Their difficulties lie particularly in the realm of episodic memory.

Verbal Working Memory Performance Correlates with Regional White Matter Structures in the Frontoparietal Regions

ERIC Educational Resources Information Center

Takeuchi, Hikaru; Taki, Yasuyuki; Sassa, Yuko; Hashizume, Hiroshi; Sekiguchi, Atsushi; Fukushima, Ai; Kawashima, Ryuta

2011-01-01

Working memory is the limited capacity storage system involved in the maintenance and manipulation of information over short periods of time. Previous imaging studies have suggested that the frontoparietal regions are activated during working memory tasks; a putative association between the structure of the frontoparietal regions and working…

The Co-Evolution of Knowledge and Event Memory

ERIC Educational Resources Information Center

Nelson, Angela B.; Shiffrin, Richard M.

2013-01-01

We present a theoretical framework and a simplified simulation model for the co-evolution of knowledge and event memory, both termed SARKAE (Storing and Retrieving Knowledge and Events). Knowledge is formed through the accrual of individual events, a process that operates in tandem with the storage of individual event memories. In 2 studies, new…

CLAss-Specific Subspace Kernel Representations and Adaptive Margin Slack Minimization for Large Scale Classification.

PubMed

Yu, Yinan; Diamantaras, Konstantinos I; McKelvey, Tomas; Kung, Sun-Yuan

2018-02-01

In kernel-based classification models, given limited computational power and storage capacity, operations over the full kernel matrix becomes prohibitive. In this paper, we propose a new supervised learning framework using kernel models for sequential data processing. The framework is based on two components that both aim at enhancing the classification capability with a subset selection scheme. The first part is a subspace projection technique in the reproducing kernel Hilbert space using a CLAss-specific Subspace Kernel representation for kernel approximation. In the second part, we propose a novel structural risk minimization algorithm called the adaptive margin slack minimization to iteratively improve the classification accuracy by an adaptive data selection. We motivate each part separately, and then integrate them into learning frameworks for large scale data. We propose two such frameworks: the memory efficient sequential processing for sequential data processing and the parallelized sequential processing for distributed computing with sequential data acquisition. We test our methods on several benchmark data sets and compared with the state-of-the-art techniques to verify the validity of the proposed techniques.

Sentinel 2 MMFU: The first European Mass Memory System Based on NAND-Flash Storage Technology

NASA Astrophysics Data System (ADS)

Staehle, M.; Cassel, M.; Lonsdorfer, U.; Gliem, F.; Walter, D.; Fichna, T.

2011-08-01

Sentinel-2 is the multispectral optical mission of the EU-ESA GMES (Global Monitoring for Environment and Security) program, currently under development by Astrium-GmbH in Friedrichshafen (Germany) for a launch in 2013. The mission features a 490 Mbit/s optical sensor operating at high duty cycles, requiring in turn a large 2.4 Tbit on-board storage capacity.The required storage capacity motivated the selection of the NAND-Flash technology which was already secured by a lengthy period (2004-2009) of detailed testing, analysis and qualification by Astrium GmbH, IDA and ESTEC. The mass memory system is currently being realized by Astrium GmbH.

Systems and methods to control multiple peripherals with a single-peripheral application code

DOEpatents

Ransom, Ray M.

2013-06-11

Methods and apparatus are provided for enhancing the BIOS of a hardware peripheral device to manage multiple peripheral devices simultaneously without modifying the application software of the peripheral device. The apparatus comprises a logic control unit and a memory in communication with the logic control unit. The memory is partitioned into a plurality of ranges, each range comprising one or more blocks of memory, one range being associated with each instance of the peripheral application and one range being reserved for storage of a data pointer related to each peripheral application of the plurality. The logic control unit is configured to operate multiple instances of the control application by duplicating one instance of the peripheral application for each peripheral device of the plurality and partitioning a memory device into partitions comprising one or more blocks of memory, one partition being associated with each instance of the peripheral application. The method then reserves a range of memory addresses for storage of a data pointer related to each peripheral device of the plurality, and initializes each of the plurality of peripheral devices.

DNA methylation in memory formation: Emerging insights

PubMed Central

Heyward, Frankie D.; Sweatt, J. David

2016-01-01

The establishment of synaptic plasticity and long-term memory requires lasting cellular and molecular modifications that, as a whole, must endure despite the rapid turnover of their constituent parts. Such a molecular feat must be mediated by a stable, self-perpetuating, cellular information storage mechanism. DNA methylation, being the archetypal cellular information storage mechanism, has been heavily implicated as being necessary for stable activity-dependent transcriptional alterations within the central nervous system (CNS). This review details the foundational discoveries from both gene-targeted, as well as whole-genome sequencing, studies that have successfully brought DNA methylation to our attention as a chief regulator of activity- and experience-dependent transcriptional alterations within the CNS. We present a hypothetical framework with which the disparate experimental findings dealing with distinct manipulations of the DNA methylation, and their effect on memory, might be resolved while taking into account the unique impact activity-dependent alterations in DNA methylation potentially have on both memory promoting and memory-suppressing gene expression. And last, we discuss potential avenues for future inquiry into the role of DNA methylation during remote memory formation. PMID:25832671

Imaging standards for smart cards

NASA Astrophysics Data System (ADS)

Ellson, Richard N.; Ray, Lawrence A.

1996-02-01

"Smart cards" are plastic cards the size of credit cards which contain integrated circuits for the storage of digital information. The applications of these cards for image storage has been growing as card data capacities have moved from tens of bytes to thousands of bytes. This has prompted the recommendation of standards by the X3B10 committee of ANSI for inclusion in ISO standards for card image storage of a variety of image data types including digitized signatures and color portrait images. This paper will review imaging requirements of the smart card industry, challenges of image storage for small memory devices, card image communications, and the present status of standards. The paper will conclude with recommendations for the evolution of smart card image standards towards image formats customized to the image content and more optimized for smart card memory constraints.

Imaging standards for smart cards

NASA Astrophysics Data System (ADS)

Ellson, Richard N.; Ray, Lawrence A.

1996-01-01

'Smart cards' are plastic cards the size of credit cards which contain integrated circuits for the storage of digital information. The applications of these cards for image storage has been growing as card data capacities have moved from tens of bytes to thousands of bytes. This has prompted the recommendation of standards by the X3B10 committee of ANSI for inclusion in ISO standards for card image storage of a variety of image data types including digitized signatures and color portrait images. This paper reviews imaging requirements of the smart card industry, challenges of image storage for small memory devices, card image communications, and the present status of standards. The paper concludes with recommendations for the evolution of smart card image standards towards image formats customized to the image content and more optimized for smart card memory constraints.

Engineered materials for all-optical helicity-dependent magnetic switching

NASA Astrophysics Data System (ADS)

Fullerton, Eric

2014-03-01

The possibilities of manipulating magnetization without applied magnetic fields have attracted growing attention over the last fifteen years. The low-power manipulation of magnetization, preferably at ultra-short time scales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization of engineered materials and devices using 100 fs optical pulses. We demonstrate that all optical - helicity dependent switching (AO-HDS) can be observed not only in selected rare-earth transition-metal (RE-TM) alloy films but also in a much broader variety of materials, including alloys, multilayers, heterostructures and RE-free Co-Ir-based synthetic ferrimagnets. The discovery of AO-HDS in RE-free TM-based synthetic ferrimagnets can enable breakthroughs for numerous applications since it exploits materials that are currently used in magnetic data storage, memories and logic technologies. In addition, this materials study of AO-HDS offers valuable insight into the underlying mechanisms involved. Indeed the common denominator of the diverse structures showing AO-HDS in this study is that two ferromagnetic sub-lattices exhibit magnetization compensation (and therefore angular momentum compensation) at temperatures near or above room temperature. We are highlighting that compensation plays a major role and that this compensation can be established at the atomic level as in alloys but also over a larger nanometers scale as in the multilayers or in heterostructures. We will also discuss the potential to extend AO-HDS to new classes of magnetic materials. This work was done in collaboration with S. Mangin, M. Gottwald, C-H. Lambert, D. Steil, V. Uhlíř, L. Pang, M. Hehn, S. Alebrand, M. Cinchetti, G. Malinowski, Y. Fainman, and M. Aeschlimann. Supported by the ANR-10-BLANC-1005 ``Friends,'' a grant from the Advanced Storage Technology Consortium, Partner University Fund ``Novel Magnetic Materials for Spin Torque Physics'' as well as the European Project (OP2M FP7-IOF-2011-298060).

Growth in literacy, cognition, and working memory in English language learners.

PubMed

Lee Swanson, H; Orosco, Michael J; Lussier, Catherine M

2015-04-01

This cohort sequential study explored the components of working memory that underlie English reading and language acquisition in elementary school children whose first language is Spanish. To this end, children (N=410) in Grades 1, 2, and 3 at Wave 1 were administered a battery of cognitive (short-term memory [STM], working memory [WM], rapid naming, phonological processing, and random letter and number generation), vocabulary, and reading measures in both Spanish and English. These same measures were administered 1 and 2 years later. The results showed that (a) a three-factor structure (phonological STM, visual-spatial WM, and verbal WM) captured the data within both language systems, (b) growth in both the executive and STM storage components was uniquely related to growth in second language (L2) reading and language acquisition, and (c) the contribution of growth in the executive component of WM to growth in L2 processing was independent of growth in storage, phonological knowledge, inhibition, and rapid naming speed. The results suggested that growth in the phonological storage system does not supersede growth of the executive component of WM as a major contributor to growth in children's L2 reading and language. Copyright © 2015 Elsevier Inc. All rights reserved.

Nanoscale thermal cross-talk effect on phase-change probe memory.

PubMed

Wang, Lei; Wen, Jing; Xiong, Bangshu

2018-05-14

Phase-change probe memory is considered as one of the most promising means for next-generation mass storage devices. However, the achievable storage density of phase-change probe memory is drastically affected by the resulting thermal cross-talk effect while previously lacking of detailed study. Therefore, a three dimensional model that couples electrical, thermal, and phase-change processes of the Ge2Sb2Te5 media is developed, and subsequently deployed to assess the thermal cross-talk effect based on Si/TiN/ Ge2Sb2Te5/diamond-like carbon structure by appropriately tailoring the electro-thermal and geometrical properties of the storage media stack for a variety of external excitations. The modeling results show that the diamond-like carbon capping with a thin thickness, a high electrical conductivity, and a low thermal conductivity is desired to minimize the thermal cross-talk, while the TiN underlayer has a slight impact on the thermal cross-talk. Combining the modeling findings with the previous film deposition experience, an optimized phase-change probe memory architecture is presented, and its capability of providing ultra-high recording density simultaneously with a sufficiently low thermal cross-talk is demonstrated. . © 2018 IOP Publishing Ltd.

Enhanced storage capacity with errors in scale-free Hopfield neural networks: An analytical study.

PubMed

Kim, Do-Hyun; Park, Jinha; Kahng, Byungnam

2017-01-01

The Hopfield model is a pioneering neural network model with associative memory retrieval. The analytical solution of the model in mean field limit revealed that memories can be retrieved without any error up to a finite storage capacity of O(N), where N is the system size. Beyond the threshold, they are completely lost. Since the introduction of the Hopfield model, the theory of neural networks has been further developed toward realistic neural networks using analog neurons, spiking neurons, etc. Nevertheless, those advances are based on fully connected networks, which are inconsistent with recent experimental discovery that the number of connections of each neuron seems to be heterogeneous, following a heavy-tailed distribution. Motivated by this observation, we consider the Hopfield model on scale-free networks and obtain a different pattern of associative memory retrieval from that obtained on the fully connected network: the storage capacity becomes tremendously enhanced but with some error in the memory retrieval, which appears as the heterogeneity of the connections is increased. Moreover, the error rates are also obtained on several real neural networks and are indeed similar to that on scale-free model networks.

Gravin orchestrates PKA and β2-adrenergic receptor signaling critical for synaptic plasticity and memory

PubMed Central

Havekes, Robbert; Canton, David A.; Park, Alan J.; Huang, Ted; Nie, Ting; Day, Jonathan P.; Guercio, Leonardo A.; Grimes, Quinn; Luczak, Vincent; Gelman, Irwin H.; Baillie, George S.; Scott, John D.; Abel, Ted

2012-01-01

A kinase-anchoring proteins (AKAPs) organize compartmentalized pools of Protein Kinase A (PKA) to enable localized signaling events within neurons. However, it is unclear which of the many expressed AKAPs in neurons target PKA to signaling complexes important for long-lasting forms of synaptic plasticity and memory storage. In the forebrain, the anchoring protein gravin recruits a signaling complex containing PKA, PKC, calmodulin, and PDE4D to the β2-adrenergic receptor. Here, we show that mice lacking the α-isoform of gravin have deficits in PKA-dependent long-lasting forms of hippocampal synaptic plasticity including β2-adrenergic receptor-mediated plasticity, and selective impairments of long-term memory storage. Further, both hippocampal β2-adrenergic receptor phosphorylation by PKA, and learning-induced activation of ERK, are attenuated in the CA1 region of the hippocampus in mice lacking gravin-α. We conclude that gravin compartmentalizes a significant pool of PKA that regulates learning-induced β2-adrenergic receptor signaling and ERK activation in the hippocampus in vivo, organizing molecular interactions between glutamatergic and noradrenergic signaling pathways for long-lasting synaptic plasticity, and memory storage. PMID:23238728

Expanded interleaved solid-state memory for a wide bandwidth transient waveform recorder

NASA Technical Reports Server (NTRS)

Thomas, R. M., Jr.

1980-01-01

An interleaved, solid state expanded memory for a 100 MHz bandwidth waveform recorder is described. The memory development resulted in a significant increase in the storage capacity of a commercially available recorder. The motivation for the memory expansion of the waveform recorder, which is used to support in-flight measurement of the electromagnetic characteristics of lightning discharges, was the need for a significantly longer data window than that provided by the commercially available unit. The expanded recorder provides a data window that is 128 times longer than the commercial unit, while maintaining the same time resolution, by increasing the storage capacity from 1024 to 131 072 data samples. The expanded unit operates at sample periods as small as 10 ns. Sampling once every 10 ns, the commercial unit records for about 10 microseconds before the memory is filled, whereas, the expanded unit records for about 1300 microseconds. A photo of the expanded waveform recorder is shown.

Evidence for two attentional components in visual working memory.

PubMed

Allen, Richard J; Baddeley, Alan D; Hitch, Graham J

2014-11-01

How does executive attentional control contribute to memory for sequences of visual objects, and what does this reveal about storage and processing in working memory? Three experiments examined the impact of a concurrent executive load (backward counting) on memory for sequences of individually presented visual objects. Experiments 1 and 2 found disruptive concurrent load effects of equivalent magnitude on memory for shapes, colors, and colored shape conjunctions (as measured by single-probe recognition). These effects were present only for Items 1 and 2 in a 3-item sequence; the final item was always impervious to this disruption. This pattern of findings was precisely replicated in Experiment 3 when using a cued verbal recall measure of shape-color binding, with error analysis providing additional insights concerning attention-related loss of early-sequence items. These findings indicate an important role for executive processes in maintaining representations of earlier encountered stimuli in an active form alongside privileged storage of the most recent stimulus. PsycINFO Database Record (c) 2014 APA, all rights reserved.

Restoring primacy in amnesic free recall: evidence for the recency theory of primacy.

PubMed

Dewar, Michaela; Brown, Gordon D A; Della Sala, Sergio

2011-09-01

Primacy and recency effects at immediate recall are thought to reflect the independent functioning of a long-term memory store (primacy) and a short-term memory store (recency). Key evidence for this theory comes from amnesic patients who show severe long-term memory storage deficits, coupled with profoundly attenuated primacy. Here we challenge this dominant dual-store theory of immediate recall by demonstrating that attenuated primacy in amnesic patients can reflect abnormal working memory rehearsal processes. D.A., a patient with severe amnesia, presented with profoundly attenuated primacy when using her preferred atypical noncumulative rehearsal strategy. In contrast, despite her severe amnesia, she showed normal primacy when her rehearsal was matched with that of controls via an externalized cumulative rehearsal schedule. Our data are in keeping with the "recency theory of primacy" and suggest that primacy at immediate recall is dependent upon medial temporal lobe involvement in cumulative rehearsal rather than long-term memory storage.

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

NASA Astrophysics Data System (ADS)

Möller, Sven; Forrest, Stephen R.; Perlov, Craig; Jackson, Warren; Taussig, Carl

2003-12-01

We demonstrate a nonvolatile, write-once-read-many-times (WORM) memory device employing a hybrid organic/inorganic semiconductor architecture consisting of thin film p-i-n silicon diode on a stainless steel substrate integrated in series with a conductive polymer fuse. The nonlinearity of the silicon diodes enables a passive matrix memory architecture, while the conductive polyethylenedioxythiophene:polystyrene sulfonic acid polymer serves as a reliable switch with fuse-like behavior for data storage. The polymer can be switched at ˜2 μs, resulting in a permanent decrease of conductivity of the memory pixel by up to a factor of 103. The switching mechanism is primarily due to a current and thermally dependent redox reaction in the polymer, limited by the double injection of both holes and electrons. The switched device performance does not degrade after many thousand read cycles in ambient at room temperature. Our results suggest that low cost, organic/inorganic WORM memories are feasible for light weight, high density, robust, and fast archival storage applications.

Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

NASA Astrophysics Data System (ADS)

Shi, K. X.; Xu, H. Y.; Wang, Z. Q.; Zhao, X. N.; Liu, W. Z.; Ma, J. G.; Liu, Y. C.

2017-11-01

Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5-x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5-x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (<100 fJ/bit) memory devices.

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

NASA Astrophysics Data System (ADS)

Lee, Juwon; Pak, Sangyeon; Lee, Young-Woo; Cho, Yuljae; Hong, John; Giraud, Paul; Shin, Hyeon Suk; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seungnam; Kim, Jong Min

2017-03-01

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ~4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

Temporal dynamics of encoding, storage and reallocation of visual working memory

PubMed Central

Bays, Paul M; Gorgoraptis, Nikos; Wee, Natalie; Marshall, Louise; Husain, Masud

2012-01-01

The process of encoding a visual scene into working memory has previously been studied using binary measures of recall. Here we examine the temporal evolution of memory resolution, based on observers’ ability to reproduce the orientations of objects presented in brief, masked displays. Recall precision was accurately described by the interaction of two independent constraints: an encoding limit that determines the maximum rate at which information can be transferred into memory, and a separate storage limit that determines the maximum fidelity with which information can be maintained. Recall variability decreased incrementally with time, consistent with a parallel encoding process in which visual information from multiple objects accumulates simultaneously in working memory. No evidence was observed for a limit on the number of items stored. Cueing one display item with a brief flash led to rapid development of a recall advantage for that item. This advantage was short-lived if the cue was simply a salient visual event, but was maintained if it indicated an object of particular relevance to the task. These cueing effects were observed even for items that had already been encoded into memory, indicating that limited memory resources can be rapidly reallocated to prioritize salient or goal-relevant information. PMID:21911739

Verbal Working Memory in Children With Cochlear Implants

PubMed Central

Caldwell-Tarr, Amanda; Low, Keri E.; Lowenstein, Joanna H.

2017-01-01

Purpose Verbal working memory in children with cochlear implants and children with normal hearing was examined. Participants Ninety-three fourth graders (47 with normal hearing, 46 with cochlear implants) participated, all of whom were in a longitudinal study and had working memory assessed 2 years earlier. Method A dual-component model of working memory was adopted, and a serial recall task measured storage and processing. Potential predictor variables were phonological awareness, vocabulary knowledge, nonverbal IQ, and several treatment variables. Potential dependent functions were literacy, expressive language, and speech-in-noise recognition. Results Children with cochlear implants showed deficits in storage and processing, similar in size to those at second grade. Predictors of verbal working memory differed across groups: Phonological awareness explained the most variance in children with normal hearing; vocabulary explained the most variance in children with cochlear implants. Treatment variables explained little of the variance. Where potentially dependent functions were concerned, verbal working memory accounted for little variance once the variance explained by other predictors was removed. Conclusions The verbal working memory deficits of children with cochlear implants arise due to signal degradation, which limits their abilities to acquire phonological awareness. That hinders their abilities to store items using a phonological code. PMID:29075747

Temporal dynamics of encoding, storage, and reallocation of visual working memory.

PubMed

Bays, Paul M; Gorgoraptis, Nikos; Wee, Natalie; Marshall, Louise; Husain, Masud

2011-09-12

The process of encoding a visual scene into working memory has previously been studied using binary measures of recall. Here, we examine the temporal evolution of memory resolution, based on observers' ability to reproduce the orientations of objects presented in brief, masked displays. Recall precision was accurately described by the interaction of two independent constraints: an encoding limit that determines the maximum rate at which information can be transferred into memory and a separate storage limit that determines the maximum fidelity with which information can be maintained. Recall variability decreased incrementally with time, consistent with a parallel encoding process in which visual information from multiple objects accumulates simultaneously in working memory. No evidence was observed for a limit on the number of items stored. Cuing one display item with a brief flash led to rapid development of a recall advantage for that item. This advantage was short-lived if the cue was simply a salient visual event but was maintained if it indicated an object of particular relevance to the task. These cuing effects were observed even for items that had already been encoded into memory, indicating that limited memory resources can be rapidly reallocated to prioritize salient or goal-relevant information.

Strategic trade-offs between quantity and quality in working memory.

PubMed

Fougnie, Daryl; Cormiea, Sarah M; Kanabar, Anish; Alvarez, George A

2016-08-01

Is working memory capacity determined by an immutable limit-for example, 4 memory storage slots? The fact that performance is typically unaffected by task instructions has been taken as support for such structural models of memory. Here, we modified a standard working memory task to incentivize participants to remember more items. Participants were asked to remember a set of colors over a short retention interval. In 1 condition, participants reported a random item's color using a color wheel. In the modified task, participants responded to all items and their response was only considered correct if all responses were on the correct half of the color wheel. We looked for a trade-off between quantity and quality-participants storing more items, but less precisely, when required to report them all. This trade-off was observed when tasks were blocked and when task-type was cued after encoding, but not when task-type was cued during the response, suggesting that task differences changed how items were actively encoded and maintained. This strategic control over the contents of working memory challenges models that assume inflexible limits on memory storage. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

Testing episodic memory in animals: a new approach.

PubMed

Griffiths, D P; Clayton, N S

2001-08-01

Episodic memory involves the encoding and storage of memories concerned with unique personal experiences and their subsequent recall, and it has long been the subject of intensive investigation in humans. According to Tulving's classical definition, episodic memory "receives and stores information about temporally dated episodes or events and temporal-spatial relations among these events." Thus, episodic memory provides information about the 'what' and 'when' of events ('temporally dated experiences') and about 'where' they happened ('temporal-spatial relations'). The storage and subsequent recall of this episodic information was thought to be beyond the memory capabilities of nonhuman animals. Although there are many laboratory procedures for investigating memory for discrete past episodes, until recently there were no previous studies that fully satisfied the criteria of Tulving's definition: they can all be explained in much simpler terms than episodic memory. However, current studies of memory for cache sites in food-storing jays provide an ethologically valid model for testing episodic-like memory in animals, thereby bridging the gap between human and animal studies memory. There is now a pressing need to adapt these experimental tests of episodic memory for other animals. Given the potential power of transgenic and knock-out procedures for investigating the genetic and molecular bases of learning and memory in laboratory rodents, not to mention the wealth of knowledge about the neuroanatomy and neurophysiology of the rodent hippocampus (a brain area heavily implicated in episodic memory), an obvious next step is to develop a rodent model of episodic-like memory based on the food-storing bird paradigm. The development of a rodent model system could make an important contribution to our understanding of the neural, molecular, and behavioral mechanisms of mammalian episodic memory.

Multiplexed Holographic Data Storage in Bacteriorhodopsin

NASA Technical Reports Server (NTRS)

Mehrl, David J.; Krile, Thomas F.

1999-01-01

Biochrome photosensitive films in particular Bacteriorhodopsin exhibit features which make these materials an attractive recording medium for optical data storage and processing. Bacteriorhodopsin films find numerous applications in a wide range of optical data processing applications; however the short-term memory characteristics of BR limits their applications for holographic data storage. The life-time of the BR can be extended using cryogenic temperatures [1], although this method makes the system overly complicated and unstable. Longer life-times can be provided in one modification of BR - the "blue" membrane BR [2], however currently available films are characterized by both low diffraction efficiency and difficulties in providing photoreversible recording. In addition, as a dynamic recording material, the BR requires different wavelengths for recording and reconstructing of optical data in order to prevent the information erasure during its readout. This fact also put constraints on a BR-based Optical Memory, due to information loss in holographic memory systems employing the two-lambda technique for reading-writing thick multiplexed holograms.

Visual working memory capacity increases between ages 3 and 8 years, controlling for gains in attention, perception, and executive control.

PubMed

Pailian, Hrag; Libertus, Melissa E; Feigenson, Lisa; Halberda, Justin

2016-08-01

Research in adults has aimed to characterize constraints on the capacity of Visual Working Memory (VWM), in part because of the system's broader impacts throughout cognition. However, less is known about how VWM develops in childhood. Existing work has reached conflicting conclusions as to whether VWM storage capacity increases after infancy, and if so, when and by how much. One challenge is that previous studies did not control for developmental changes in attention and executive processing, which also may undergo improvement. We investigated the development of VWM storage capacity in children from 3 to 8 years of age, and in adults, while controlling for developmental change in exogenous and endogenous attention and executive control. Our results reveal that, when controlling for improvements in these abilities, VWM storage capacity increases across development and approaches adult-like levels between ages 6 and 8 years. More generally, this work highlights the value of estimating working memory, attention, perception, and decision-making components together.

The effects of aging on the working memory processes of multimodal information.

PubMed

Solesio-Jofre, Elena; López-Frutos, José María; Cashdollar, Nathan; Aurtenetxe, Sara; de Ramón, Ignacio; Maestú, Fernando

2017-05-01

Normal aging is associated with deficits in working memory processes. However, the majority of research has focused on storage or inhibitory processes using unimodal paradigms, without addressing their relationships using different sensory modalities. Hence, we pursued two objectives. First, was to examine the effects of aging on storage and inhibitory processes. Second, was to evaluate aging effects on multisensory integration of visual and auditory stimuli. To this end, young and older participants performed a multimodal task for visual and auditory pairs of stimuli with increasing memory load at encoding and interference during retention. Our results showed an age-related increased vulnerability to interrupting and distracting interference reflecting inhibitory deficits related to the off-line reactivation and on-line suppression of relevant and irrelevant information, respectively. Storage capacity was impaired with increasing task demands in both age groups. Additionally, older adults showed a deficit in multisensory integration, with poorer performance for new visual compared to new auditory information.

Addressable configurations of DNA nanostructures for rewritable memory

PubMed Central

Levchenko, Oksana; Patel, Dhruv S.; MacIsaac, Molly

2017-01-01

Abstract DNA serves as nature's information storage molecule, and has been the primary focus of engineered systems for biological computing and data storage. Here we combine recent efforts in DNA self-assembly and toehold-mediated strand displacement to develop a rewritable multi-bit DNA memory system. The system operates by encoding information in distinct and reversible conformations of a DNA nanoswitch and decoding by gel electrophoresis. We demonstrate a 5-bit system capable of writing, erasing, and rewriting binary representations of alphanumeric symbols, as well as compatibility with ‘OR’ and ‘AND’ logic operations. Our strategy is simple to implement, requiring only a single mixing step at room temperature for each operation and standard gel electrophoresis to read the data. We envision such systems could find use in covert product labeling and barcoding, as well as secure messaging and authentication when combined with previously developed encryption strategies. Ultimately, this type of memory has exciting potential in biomedical sciences as data storage can be coupled to sensing of biological molecules. PMID:28977499

A highly efficient silole-containing dithienylethene with excellent thermal stability and fatigue resistance: a promising candidate for optical memory storage materials.

PubMed

Chan, Jacky Chi-Hung; Lam, Wai Han; Yam, Vivian Wing-Wah

2014-12-10

Diarylethene compounds are potential candidates for applications in optical memory storage systems and photoswitchable molecular devices; however, they usually show low photocycloreversion quantum yields, which result in ineffective erasure processes. Here, we present the first highly efficient photochromic silole-containing dithienylethene with excellent thermal stability and fatigue resistance. The photochemical quantum yields for photocyclization and photocycloreversion of the compound are found to be high and comparable to each other; the latter of which is rarely found in diarylethene compounds. These would give rise to highly efficient photoswitchable material with effective writing and erasure processes. Incorporation of the silole moiety as a photochromic dithienylethene backbone also was demonstrated to enhance the thermal stability of the closed form, in which the thermal backward reaction to the open form was found to be negligible even at 100 °C, which leads to a promising candidate for use as photoswitchable materials and optical memory storage.

Decoding the content of visual short-term memory under distraction in occipital and parietal areas.

PubMed

Bettencourt, Katherine C; Xu, Yaoda

2016-01-01

Recent studies have provided conflicting accounts regarding where in the human brain visual short-term memory (VSTM) content is stored, with strong univariate fMRI responses being reported in superior intraparietal sulcus (IPS), but robust multivariate decoding being reported in occipital cortex. Given the continuous influx of information in everyday vision, VSTM storage under distraction is often required. We found that neither distractor presence nor predictability during the memory delay affected behavioral performance. Similarly, superior IPS exhibited consistent decoding of VSTM content across all distractor manipulations and had multivariate responses that closely tracked behavioral VSTM performance. However, occipital decoding of VSTM content was substantially modulated by distractor presence and predictability. Furthermore, we found no effect of target-distractor similarity on VSTM behavioral performance, further challenging the role of sensory regions in VSTM storage. Overall, consistent with previous univariate findings, our results indicate that superior IPS, but not occipital cortex, has a central role in VSTM storage.

Optically Addressable, Ferroelectric Memory With NDRO

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1994-01-01

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Can Imageability Help Us Draw the Line between Storage and Composition?

ERIC Educational Resources Information Center

Prado, Elizabeth L.; Ullman, Michael T.

2009-01-01

Language requires both storage and composition. However, exactly what is retrieved from memory and what is assembled remains controversial, especially for inflected words. Here, "imageability effects" is introduced as a new diagnostic of storage and a complement to frequency effects. In 2 studies of past-tense morphology, more reliable…

Storage Capacity Explains Fluid Intelligence but Executive Control Does Not

ERIC Educational Resources Information Center

Chuderski, Adam; Taraday, Maciej; Necka, Edward; Smolen, Tomasz

2012-01-01

We examined whether fluid intelligence (Gf) is better predicted by the storage capacity of active memory or by the effectiveness of executive control. In two psychometric studies, we measured storage capacity with three kinds of task which required the maintenance of a visual array, the monitoring of simple relations among perceptually available…

Filling the Memory Access Gap: A Case for On-Chip Magnetic Storage

DTIC Science & Technology

1999-11-01

PCs, PDAs, and video camcorders, MEMS-based storage also provides a more robust and lower power solution. Unlike rotating storage, which cannot...goldfish. Just chew and swallow. like a chick in a porno . eww, miracle whip. Now give me the Coke. I think of my happy place, eww, melted tongue

The application of a sparse, distributed memory to the detection, identification and manipulation of physical objects

NASA Technical Reports Server (NTRS)

Kanerva, P.

1986-01-01

To determine the relation of the sparse, distributed memory to other architectures, a broad review of the literature was made. The memory is called a pattern memory because they work with large patterns of features (high-dimensional vectors). A pattern is stored in a pattern memory by distributing it over a large number of storage elements and by superimposing it over other stored patterns. A pattern is retrieved by mathematical or statistical reconstruction from the distributed elements. Three pattern memories are discussed.

Investigation of fast initialization of spacecraft bubble memory systems

NASA Technical Reports Server (NTRS)

Looney, K. T.; Nichols, C. D.; Hayes, P. J.

1984-01-01

Bubble domain technology offers significant improvement in reliability and functionality for spacecraft onboard memory applications. In considering potential memory systems organizations, minimization of power in high capacity bubble memory systems necessitates the activation of only the desired portions of the memory. In power strobing arbitrary memory segments, a capability of fast turn on is required. Bubble device architectures, which provide redundant loop coding in the bubble devices, limit the initialization speed. Alternate initialization techniques are investigated to overcome this design limitation. An initialization technique using a small amount of external storage is demonstrated.

Remote direct memory access

DOEpatents

Archer, Charles J.; Blocksome, Michael A.

2012-12-11

Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

Does Contralateral Delay Activity Reflect Working Memory Storage or the Current Focus of Spatial Attention within Visual Working Memory?

PubMed

Berggren, Nick; Eimer, Martin

2016-12-01

During the retention of visual information in working memory, event-related brain potentials show a sustained negativity over posterior visual regions contralateral to the side where memorized stimuli were presented. This contralateral delay activity (CDA) is generally believed to be a neural marker of working memory storage. In two experiments, we contrasted this storage account of the CDA with the alternative hypothesis that the CDA reflects the current focus of spatial attention on a subset of memorized items set up during the most recent encoding episode. We employed a sequential loading procedure where participants memorized four task-relevant items that were presented in two successive memory displays (M1 and M2). In both experiments, CDA components were initially elicited contralateral to task-relevant items in M1. Critically, the CDA switched polarity when M2 displays appeared on the opposite side. In line with the attentional activation account, these reversed CDA components exclusively reflected the number of items that were encoded from M2 displays, irrespective of how many M1 items were already held in working memory. On trials where M1 and M2 displays were presented on the same side and on trials where M2 displays appeared nonlaterally, CDA components elicited in the interval after M2 remained sensitive to a residual trace of M1 items, indicating that some activation of previously stored items was maintained across encoding episodes. These results challenge the hypothesis that CDA amplitudes directly reflect the total number of stored objects and suggest that the CDA is primarily sensitive to the activation of a subset of working memory representations within the current focus of spatial attention.

Communication: Practical and rigorous reduction of the many-electron quantum mechanical Coulomb problem to O(N{sup 2/3}) storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pederson, Mark R., E-mail: mark.pederson@science.doe.gov

2015-04-14

It is tacitly accepted that, for practical basis sets consisting of N functions, solution of the two-electron Coulomb problem in quantum mechanics requires storage of O(N{sup 4}) integrals in the small N limit. For localized functions, in the large N limit, or for planewaves, due to closure, the storage can be reduced to O(N{sup 2}) integrals. Here, it is shown that the storage can be further reduced to O(N{sup 2/3}) for separable basis functions. A practical algorithm, that uses standard one-dimensional Gaussian-quadrature sums, is demonstrated. The resulting algorithm allows for the simultaneous storage, or fast reconstruction, of any two-electron Coulombmore » integral required for a many-electron calculation on processors with limited memory and disk space. For example, for calculations involving a basis of 9171 planewaves, the memory required to effectively store all Coulomb integrals decreases from 2.8 Gbytes to less than 2.4 Mbytes.« less

Communication: practical and rigorous reduction of the many-electron quantum mechanical Coulomb problem to O(N(2/3)) storage.

PubMed

Pederson, Mark R

2015-04-14

It is tacitly accepted that, for practical basis sets consisting of N functions, solution of the two-electron Coulomb problem in quantum mechanics requires storage of O(N(4)) integrals in the small N limit. For localized functions, in the large N limit, or for planewaves, due to closure, the storage can be reduced to O(N(2)) integrals. Here, it is shown that the storage can be further reduced to O(N(2/3)) for separable basis functions. A practical algorithm, that uses standard one-dimensional Gaussian-quadrature sums, is demonstrated. The resulting algorithm allows for the simultaneous storage, or fast reconstruction, of any two-electron Coulomb integral required for a many-electron calculation on processors with limited memory and disk space. For example, for calculations involving a basis of 9171 planewaves, the memory required to effectively store all Coulomb integrals decreases from 2.8 Gbytes to less than 2.4 Mbytes.

The Cognitive Neuroscience of Human Memory Since H.M

PubMed Central

Squire, Larry R.; Wixted, John T.

2011-01-01

Work with patient H.M., beginning in the 1950s, established key principles about the organization of memory that inspired decades of experimental work. Since H.M., the study of human memory and its disorders has continued to yield new insights and to improve understanding of the structure and organization of memory. Here we review this work with emphasis on the neuroanatomy of medial temporal lobe and diencephalic structures important for memory, multiple memory systems, visual perception, immediate memory, memory consolidation, the locus of long-term memory storage, the concepts of recollection and familiarity, and the question of how different medial temporal lobe structures may contribute differently to memory functions. PMID:21456960

Computer memory power control for the Galileo spacecraft

NASA Technical Reports Server (NTRS)

Detwiler, R. C.

1983-01-01

The developmental history, major design drives, and final topology of the computer memory power system on the Galileo spacecraft are described. A unique method of generating memory backup power directly from the fault current drawn during a spacecraft power overload or fault condition allows this system to provide continuous memory power. This concept provides a unique solution to the problem of volatile memory loss without the use of a battery of other large energy storage elements usually associated with uninterrupted power supply designs.

High performance shape memory polymer networks based on rigid nanoparticle cores

PubMed Central

Song, Jie

2010-01-01

Smart materials that can respond to external stimuli are of widespread interest in biomedical science. Thermal-responsive shape memory polymers, a class of intelligent materials that can be fixed at a temporary shape below their transition temperature (Ttrans) and thermally triggered to resume their original shapes on demand, hold great potential as minimally invasive self-fitting tissue scaffolds or implants. The intrinsic mechanism for shape memory behavior of polymers is the freezing and activation of the long-range motion of polymer chain segments below and above Ttrans, respectively. Both Ttrans and the extent of polymer chain participation in effective elastic deformation and recovery are determined by the network composition and structure, which are also defining factors for their mechanical properties, degradability, and bioactivities. Such complexity has made it extremely challenging to achieve the ideal combination of a Ttrans slightly above physiological temperature, rapid and complete recovery, and suitable mechanical and biological properties for clinical applications. Here we report a shape memory polymer network constructed from a polyhedral oligomeric silsesquioxane nanoparticle core functionalized with eight polyester arms. The cross-linked networks comprising this macromer possessed a gigapascal-storage modulus at body temperature and a Ttrans between 42 and 48 °C. The materials could stably hold their temporary shapes for > 1 year at room temperature and achieve full shape recovery ≤ 51 °C in a matter of seconds. Their versatile structures allowed for tunable biodegradability and biofunctionalizability. These materials have tremendous promise for tissue engineering applications. PMID:20375285

Understanding phonological memory deficits in boys with attention-deficit/hyperactivity disorder (ADHD): dissociation of short-term storage and articulatory rehearsal processes.

PubMed

Bolden, Jennifer; Rapport, Mark D; Raiker, Joseph S; Sarver, Dustin E; Kofler, Michael J

2012-08-01

The current study dissociated and examined the two primary components of the phonological working memory subsystem--the short-term store and articulatory rehearsal mechanism--in boys with ADHD (n = 18) relative to typically developing boys (n = 15). Word lists of increasing length (2, 4, and 6 words per trial) were presented to and recalled by children following a brief (3 s) interval to assess their phonological short-term storage capacity. Children's ability to utilize the articulatory rehearsal mechanism to actively maintain information in the phonological short-term store was assessed using word lists at their established memory span but with extended rehearsal times (12 s and 21 s delays). Results indicate that both phonological shortterm storage capacity and articulatory rehearsal are impaired or underdeveloped to a significant extent in boys with ADHD relative to typically developing boys, even after controlling for age, SES, IQ, and reading speed. Larger magnitude deficits, however, were apparent in short-term storage capacity (ES = 1.15 to 1.98) relative to articulatory rehearsal (ES = 0.47 to 1.02). These findings are consistent with previous reports of deficient phonological short-term memory in boys with ADHD, and suggest that future attempts to develop remedial cognitive interventions for children with ADHD will need to include active components that require children to hold increasingly more information over longer time intervals.

Remembering Complex Objects in Visual Working Memory: Do Capacity Limits Restrict Objects or Features?

PubMed Central

Hardman, Kyle; Cowan, Nelson

2014-01-01

Visual working memory stores stimuli from our environment as representations that can be accessed by high-level control processes. This study addresses a longstanding debate in the literature about whether storage limits in visual working memory include a limit to the complexity of discrete items. We examined the issue with a number of change-detection experiments that used complex stimuli which possessed multiple features per stimulus item. We manipulated the number of relevant features of the stimulus objects in order to vary feature load. In all of our experiments, we found that increased feature load led to a reduction in change-detection accuracy. However, we found that feature load alone could not account for the results, but that a consideration of the number of relevant objects was also required. This study supports capacity limits for both feature and object storage in visual working memory. PMID:25089739

Superhydrophobic Surface With Shape Memory Micro/Nanostructure and Its Application in Rewritable Chip for Droplet Storage.

PubMed

Lv, Tong; Cheng, Zhongjun; Zhang, Dongjie; Zhang, Enshuang; Zhao, Qianlong; Liu, Yuyan; Jiang, Lei

2016-09-21

Recently, superhydrophobic surfaces with tunable wettability have aroused much attention. Noticeably, almost all present smart performances rely on the variation of surface chemistry on static micro/nanostructure, to obtain a surface with dynamically tunable micro/nanostructure, especially that can memorize and keep different micro/nanostructures and related wettabilities, is still a challenge. Herein, by creating micro/nanostructured arrays on shape memory polymer, a superhydrophobic surface that has shape memory ability in changing and recovering its hierarchical structures and related wettabilities was reported. Meanwhile, the surface was successfully used in the rewritable functional chip for droplet storage by designing microstructure-dependent patterns, which breaks through current research that structure patterns cannot be reprogrammed. This article advances a superhydrophobic surface with shape memory hierarchical structure and the application in rewritable functional chip, which could start some fresh ideas for the development of smart superhydrophobic surface.

Temporal Multimode Storage of Entangled Photon Pairs

NASA Astrophysics Data System (ADS)

Tiranov, Alexey; Strassmann, Peter C.; Lavoie, Jonathan; Brunner, Nicolas; Huber, Marcus; Verma, Varun B.; Nam, Sae Woo; Mirin, Richard P.; Lita, Adriana E.; Marsili, Francesco; Afzelius, Mikael; Bussières, Félix; Gisin, Nicolas

2016-12-01

Multiplexed quantum memories capable of storing and processing entangled photons are essential for the development of quantum networks. In this context, we demonstrate and certify the simultaneous storage and retrieval of two entangled photons inside a solid-state quantum memory and measure a temporal multimode capacity of ten modes. This is achieved by producing two polarization-entangled pairs from parametric down-conversion and mapping one photon of each pair onto a rare-earth-ion-doped (REID) crystal using the atomic frequency comb (AFC) protocol. We develop a concept of indirect entanglement witnesses, which can be used as Schmidt number witnesses, and we use it to experimentally certify the presence of more than one entangled pair retrieved from the quantum memory. Our work puts forward REID-AFC as a platform compatible with temporal multiplexing of several entangled photon pairs along with a new entanglement certification method, useful for the characterization of multiplexed quantum memories.

A single-atom quantum memory in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freer, Solomon; Simmons, Stephanie; Laucht, Arne

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28Si. The fidelity of the memory process ismore » characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.« less

Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

NASA Astrophysics Data System (ADS)

Riente, Fabrizio; Ziemys, Grazvydas; Mattersdorfer, Clemens; Boche, Silke; Turvani, Giovanna; Raberg, Wolfgang; Luber, Sebastian; Breitkreutz-v. Gamm, Stephan

2017-05-01

Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML) is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

A single-atom quantum memory in silicon

DOE PAGES

Freer, Solomon; Simmons, Stephanie; Laucht, Arne; ...

2017-03-20

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28Si. The fidelity of the memory process ismore » characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.« less

Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

NASA Astrophysics Data System (ADS)

Bhattacharjee, Snigdha; Sarkar, Pranab Kumar; Prajapat, Manoj; Roy, Asim

2017-07-01

Molybdenum disulfide (MoS2) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties of polymethylmethacrylate embedding MoS2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as the top electrode. Systematic evaluation of resistive switching parameters, on the basis of MoS2 content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance of 3  ×  103, 105 s and 105 cycles are respectively recorded in a device with 1 weight percent (wt%) of MoS2. The bending cyclic measurements confirm the flexibility of the memory devices with good electrical reliability as well as mechanical stability. In addition, multilevel storage has been demonstrated by controlling the current compliance and span of voltage sweeping in the memory device.

Tracing Donor-MHC Class II Reactive B cells in Mouse Cardiac Transplantation: Delayed CTLA4-Ig Treatment Prevents Memory Alloreactive B-Cell Generation.

PubMed

Yang, Jinghui; Chen, Jianjun; Young, James S; Wang, Qiang; Yin, Dengping; Sciammas, Roger; Chong, Anita S

2016-08-01

The dual role of B cells as drivers and suppressors of the immune responses have underscored the need to trace the fate of B cells recognizing donor major histocompatibility complex class I and class II after allograft transplantation. In this study, we used donor class II tetramers to trace the fate of I-E-specific B cells after immunization with BALB/c spleen cells or cardiac transplantation, in naive or sensitized C57BL/6 recipients. We combined this approach with genetic lineage tracing of memory B cells in activation-induced cytidine deaminase regulated Cre transgenic mice crossed to the ROSA26-enhanced yellow fluorescent protein reporter mice to track endogenous I-E-specific memory B cell generation. Immunization with BALB/c splenocytes or heart transplantation induced an expansion and differentiation of I-E-specific B cells into germinal center B cells, whereas BALB/c heart transplantation into sensitized recipients induced the preferential differentiation into antibody-secreting cells. A 10.8-fold increase in the frequency of I-E-specific memory B cells was observed by day 42 postimmunization. Treatment with CTLA4-Ig starting on day 0 or day 7 postimmunization abrogated I-E-specific memory B cell generation and sensitized humoral responses, but not if treatment commenced on day 14. The majority of donor-specific memory B cells are generated between days 7 and 14 postimmunization, thus revealing a flexible timeframe whereby delayed CTLA4-Ig administration can inhibit sensitization and the generation of memory graft-reactive B cells.

76 FR 43821 - Amendment of Class E Airspace; Ava, MO

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-22

.... Decommissioning of the Bilmart non-directional beacon (NDB) at Ava Bill Martin Memorial Airport, Ava, MO, has made... Register approves this incorporation by reference action under 1 CFR part 51, subject to the annual... to amend Class E airspace for Ava, MO, reconfiguring controlled airspace at Ava Bill Martin Memorial...

Individual differences in working memory and reasoning-remembering relationships in solving class-inclusion problems.

PubMed

Howe, M L; Rabinowitz, F M; Powell, T L

1998-09-01

In the present experiment, we evaluated the effects of individual differences in reading span and variation in memory demands on class-inclusion performance. One hundred twenty college students whose reading spans ranged from low to medium to high (as indexed by a computerized version of the Daneman and Carpenter [1980] reading-span task) solved 48 class-inclusion problems. Half of the subjects had the solution information available when the problems were presented; the other half performed a detection task between solution information and problem presentation. The results from both standard statistical analyses and from a mathematical model indicated that differences in reading span and memory load had predictable, similar effects. Specifically, the sophistication of reasoning strategies declined when memory demands increased or when reading spans decreased. Surprisingly, these effects were primarily additive. The results were interpreted in terms of global resource models and findings from the developmental literature.

Checkpoint-Restart in User Space

DOE Office of Scientific and Technical Information (OSTI.GOV)

CRUISE implements a user-space file system that stores data in main memory and transparently spills over to other storage, like local flash memory or the parallel file system, as needed. CRUISE also exposes file contents fo remote direct memory access, allowing external tools to copy files to the parallel file system in the background with reduced CPU interruption.

Deaf Children and Children with ADHD in the Inclusive Classroom: Working Memory Matters

ERIC Educational Resources Information Center

Cockcroft, Kate; Dhana-Dullabh, Hansini

2013-01-01

This study compared the working memory functioning of deaf children, children with ADHD and typically developing children. Working memory is involved in the storage and mental manipulation of information during classroom learning activities that are crucial for the acquisition of complex skills and knowledge. Thus, it is important to determine how…

Interaction between the Basolateral Amygdala and Dorsal Hippocampus Is Critical for Cocaine Memory Reconsolidation and Subsequent Drug Context-Induced Cocaine-Seeking Behaviorin Rats

ERIC Educational Resources Information Center

Wells, Audrey M.; Lasseter, Heather C.; Xie, Xiaohu; Cowhey, Kate E.; Reittinger, Andrew M.; Fuchs, Rita A.

2011-01-01

Contextual stimulus control over instrumental drug-seeking behavior relies on the reconsolidation of context-response-drug associative memories into long-term memory storage following retrieval-induced destabilization. According to previous studies, the basolateral amygdala (BLA) and dorsal hippocampus (DH) regulate cocaine-related memory…

Long-Term Memory Shapes the Primary Olfactory Center of an Insect Brain

ERIC Educational Resources Information Center

Hourcade, Benoit; Perisse, Emmanuel; Devaud, Jean-Marc; Sandoz, Jean-Christophe

2009-01-01

The storage of stable memories is generally considered to rely on changes in the functional properties and/or the synaptic connectivity of neural networks. However, these changes are not easily tractable given the complexity of the learning procedures and brain circuits studied. Such a search can be narrowed down by studying memories of specific…

How Quickly They Forget: The Relationship between Forgetting and Working Memory Performance

ERIC Educational Resources Information Center

Bayliss, Donna M.; Jarrold, Christopher

2015-01-01

This study examined the contribution of individual differences in rate of forgetting to variation in working memory performance in children. One hundred and twelve children (mean age 9 years 4 months) completed 2 tasks designed to measure forgetting, as well as measures of working memory, processing efficiency, and short-term storage ability.…

Two Waves of Transcription Are Required for Long-Term Memory in the Honeybee

ERIC Educational Resources Information Center

Lefer, Damien; Perisse, Emmanuel; Hourcade, Benoit; Sandoz, JeanChristophe; Devaud, Jean-Marc

2013-01-01

Storage of information into long-term memory (LTM) usually requires at least two waves of transcription in many species. However, there is no clear evidence of this phenomenon in insects, which are influential models for memory studies. We measured retention in honeybees after injecting a transcription inhibitor at different times before and after…

Relation of Three Mechanisms of Working Memory to Children's Complex Span Performance

ERIC Educational Resources Information Center

Magimairaj, Beula; Montgomery, James; Marinellie, Sally; McCarthy, John

2009-01-01

There is a paucity of research examining the relative contribution of the different mechanisms of working memory (short-term storage [STM], processing speed) to children's complex memory span. This study served to replicate and extend the few extant studies that have examined the issue. In this study, the relative contribution of three mechanisms…

Interaction of Inhibitory and Facilitatory Effects of Conditioning Trials on Long-Term Memory Formation

ERIC Educational Resources Information Center

Hosono, Shouhei; Matsumoto, Yukihisa; Mizunami, Makoto

2016-01-01

Animals learn through experience and consolidate the memories into long-time storage. Conditioning parameters to induce protein synthesis-dependent long-term memory (LTM) have been the subject of extensive studies in many animals. Here we found a case in which a conditioning trial inhibits or facilitates LTM formation depending on the intervals…

Endogenous BDNF Is Required for Long-Term Memory Formation in the Rat Parietal Cortex

ERIC Educational Resources Information Center

Alonso, Mariana; Bekinschtein, Pedro, Cammarota, Martin; Vianna, Monica R. M.; Izquierdo, Ivan; Medina, Jorge H.

2005-01-01

Information storage in the brain is a temporally graded process involving different memory phases as well as different structures in the mammalian brain. Cortical plasticity seems to be essential to store stable long-term memories, although little information is available at the moment regarding molecular and cellular events supporting memory…

Extreme Quantum Memory Advantage for Rare-Event Sampling

NASA Astrophysics Data System (ADS)

Aghamohammadi, Cina; Loomis, Samuel P.; Mahoney, John R.; Crutchfield, James P.

2018-02-01

We introduce a quantum algorithm for memory-efficient biased sampling of rare events generated by classical memoryful stochastic processes. Two efficiency metrics are used to compare quantum and classical resources for rare-event sampling. For a fixed stochastic process, the first is the classical-to-quantum ratio of required memory. We show for two example processes that there exists an infinite number of rare-event classes for which the memory ratio for sampling is larger than r , for any large real number r . Then, for a sequence of processes each labeled by an integer size N , we compare how the classical and quantum required memories scale with N . In this setting, since both memories can diverge as N →∞ , the efficiency metric tracks how fast they diverge. An extreme quantum memory advantage exists when the classical memory diverges in the limit N →∞ , but the quantum memory has a finite bound. We then show that finite-state Markov processes and spin chains exhibit memory advantage for sampling of almost all of their rare-event classes.

Cognitive Performance in Older Adults with Stable Heart Failure: Longitudinal Evidence for Stability and Improvement

PubMed Central

Alosco, Michael L.; Garcia, Sarah; Spitznagel, Mary Beth; van Dulmen, Manfred; Cohen, Ronald; Sweet, Lawrence H.; Josephson, Richard; Hughes, Joel; Rosneck, Jim; Gunstad, John

2013-01-01

Cognitive impairment is prevalent in heart failure (HF), though substantial variability in the pattern of cognitive impairment is found across studies. To clarify the nature of cognitive impairment in HF, we examined longitudinal trajectories across multiple domains of cognition in HF patients using latent growth class modeling. 115 HF patients completed a neuropsychological battery at baseline, 3-months and 12-months. Participants also completed the Beck Depression Inventory-II (BDI-II). Latent class growth analyses revealed a three-class model for attention/executive function, four-class model for memory, and a three-class model for language. The slope for attention/executive function and language remained stable, while improvements were noted in memory performance. Education and BDI-II significantly predicted the intercept for attention/executive function and language abilities. The BDI-II also predicted baseline memory. The current findings suggest that multiple performance-based classes of neuropsychological test performance exist within cognitive domains, though case-controlled prospective studies with extended follow-ups are needed to fully elucidate changes and predictors of cognitive function in HF. PMID:23906182

Effect of Alzheimer's disease risk and protective factors on cognitive trajectories in subjective memory complainers.

PubMed

Teipel, Stefan J; Cavedo, Enrica; Lista, Simone; Habert, Marie-Odile; Potier, Marie-Claude; Grothe, Michel J; Epelbaum, Stephane; Sambati, Luisa; Gagliardi, Geoffroy; Toschi, Nicola; Greicius, Michael; Dubois, Bruno; Hampel, Harald

2018-05-21

Cognitive change in people at risk of Alzheimer's disease (AD) such as subjective memory complainers is highly variable across individuals. We used latent class growth modeling to identify distinct classes of nonlinear trajectories of cognitive change over 2 years follow-up from 265 subjective memory complainers individuals (age 70 years and older) of the INSIGHT-preAD cohort. We determined the effect of cortical amyloid load, hippocampus and basal forebrain volumes, and education on the cognitive trajectory classes. Latent class growth modeling identified distinct nonlinear cognitive trajectories. Education was associated with higher performing trajectories, whereas global amyloid load and basal forebrain atrophy were associated with lower performing trajectories. Distinct classes of cognitive trajectories were associated with risk and protective factors of AD. These associations support the notion that the identified cognitive trajectories reflect different risk for AD that may be useful for selecting high-risk individuals for intervention trials. Copyright © 2018. Published by Elsevier Inc.

Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

NASA Astrophysics Data System (ADS)

McCamey, D. R.; Van Tol, J.; Morley, G. W.; Boehme, C.

2010-12-01

Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

Use of biphase-coded pulses for wideband data storage in time-domain optical memories.

PubMed

Shen, X A; Kachru, R

1993-06-10

We demonstrate that temporally long laser pulses with appropriate phase modulation can replace either temporally brief or frequency-chirped pulses in a time-domain optical memory to store and retrieve information. A 1.65-µs-long write pulse was biphase modulated according to the 13-bit Barker code for storing multiple bits of optical data into a Pr(3+):YAlO(3) crystal, and the stored information was later recalled faithfully by using a read pulse that was identical to the write pulse. Our results further show that the stored data cannot be retrieved faithfully if mismatched write and read pulses are used. This finding opens up the possibility of designing encrypted optical memories for secure data storage.

Ultra-High Density Holographic Memory Module with Solid-State Architecture

NASA Technical Reports Server (NTRS)

Markov, Vladimir B.

2000-01-01

NASA's terrestrial. space, and deep-space missions require technology that allows storing. retrieving, and processing a large volume of information. Holographic memory offers high-density data storage with parallel access and high throughput. Several methods exist for data multiplexing based on the fundamental principles of volume hologram selectivity. We recently demonstrated that a spatial (amplitude-phase) encoding of the reference wave (SERW) looks promising as a way to increase the storage density. The SERW hologram offers a method other than traditional methods of selectivity, such as spatial de-correlation between recorded and reconstruction fields, In this report we present the experimental results of the SERW-hologram memory module with solid-state architecture, which is of particular interest for space operations.

Multipulse addressing of a Raman quantum memory: configurable beam splitting and efficient readout.

PubMed

Reim, K F; Nunn, J; Jin, X-M; Michelberger, P S; Champion, T F M; England, D G; Lee, K C; Kolthammer, W S; Langford, N K; Walmsley, I A

2012-06-29

Quantum memories are vital to the scalability of photonic quantum information processing (PQIP), since the storage of photons enables repeat-until-success strategies. On the other hand, the key element of all PQIP architectures is the beam splitter, which allows us to coherently couple optical modes. Here, we show how to combine these crucial functionalities by addressing a Raman quantum memory with multiple control pulses. The result is a coherent optical storage device with an extremely large time bandwidth product, that functions as an array of dynamically configurable beam splitters, and that can be read out with arbitrarily high efficiency. Networks of such devices would allow fully scalable PQIP, with applications in quantum computation, long distance quantum communications and quantum metrology.

Ferroelectric symmetry-protected multibit memory cell

DOE PAGES

Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

2017-02-08

Here, the tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valuedmore » non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.« less

The performance of disk arrays in shared-memory database machines

NASA Technical Reports Server (NTRS)

Katz, Randy H.; Hong, Wei

1993-01-01

In this paper, we examine how disk arrays and shared memory multiprocessors lead to an effective method for constructing database machines for general-purpose complex query processing. We show that disk arrays can lead to cost-effective storage systems if they are configured from suitably small formfactor disk drives. We introduce the storage system metric data temperature as a way to evaluate how well a disk configuration can sustain its workload, and we show that disk arrays can sustain the same data temperature as a more expensive mirrored-disk configuration. We use the metric to evaluate the performance of disk arrays in XPRS, an operational shared-memory multiprocessor database system being developed at the University of California, Berkeley.

The impact of multiple memory formation on dendritic complexity in the hippocampus and anterior cingulate cortex assessed at recent and remote time points

PubMed Central

Wartman, Brianne C.; Holahan, Matthew R.

2014-01-01

Consolidation processes, involving synaptic and systems level changes, are suggested to stabilize memories once they are formed. At the synaptic level, dendritic structural changes are associated with long-term memory storage. At the systems level, memory storage dynamics between the hippocampus and anterior cingulate cortex (ACC) may be influenced by the number of sequentially encoded memories. The present experiment utilized Golgi-Cox staining and neuron reconstruction to examine recent and remote structural changes in the hippocampus and ACC following training on three different behavioral procedures. Rats were trained on one hippocampal-dependent task only (a water maze task), two hippocampal-dependent tasks (a water maze task followed by a radial arm maze task), or one hippocampal-dependent and one non-hippocampal-dependent task (a water maze task followed by an operant conditioning task). Rats were euthanized recently or remotely. Brains underwent Golgi-Cox processing and neurons were reconstructed using Neurolucida software (MicroBrightField, Williston, VT, USA). Rats trained on two hippocampal-dependent tasks displayed increased dendritic complexity compared to control rats, in neurons examined in both the ACC and hippocampus at recent and remote time points. Importantly, this behavioral group showed consistent, significant structural differences in the ACC compared to the control group at the recent time point. These findings suggest that taxing the demand placed upon the hippocampus, by training rats on two hippocampal-dependent tasks, engages synaptic and systems consolidation processes in the ACC at an accelerated rate for recent and remote storage of spatial memories. PMID:24795581

Quantum Storage of Three-Dimensional Orbital-Angular-Momentum Entanglement in a Crystal.

PubMed

Zhou, Zong-Quan; Hua, Yi-Lin; Liu, Xiao; Chen, Geng; Xu, Jin-Shi; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2015-08-14

Here we present the quantum storage of three-dimensional orbital-angular-momentum photonic entanglement in a rare-earth-ion-doped crystal. The properties of the entanglement and the storage process are confirmed by the violation of the Bell-type inequality generalized to three dimensions after storage (S=2.152±0.033). The fidelity of the memory process is 0.993±0.002, as determined through complete quantum process tomography in three dimensions. An assessment of the visibility of the stored weak coherent pulses in higher-dimensional spaces demonstrates that the memory is highly reliable for 51 spatial modes. These results pave the way towards the construction of high-dimensional and multiplexed quantum repeaters based on solid-state devices. The multimode capacity of rare-earth-based optical processors goes beyond the temporal and the spectral degree of freedom, which might provide a useful tool for photonic information processing.

Working memory for visual features and conjunctions in schizophrenia.

PubMed

Gold, James M; Wilk, Christopher M; McMahon, Robert P; Buchanan, Robert W; Luck, Steven J

2003-02-01

The visual working memory (WM) storage capacity of patients with schizophrenia was investigated using a change detection paradigm. Participants were presented with 2, 3, 4, or 6 colored bars with testing of both single feature (color, orientation) and feature conjunction conditions. Patients performed significantly worse than controls at all set sizes but demonstrated normal feature binding. Unlike controls, patient WM capacity declined at set size 6 relative to set size 4. Impairments with subcapacity arrays suggest a deficit in task set maintenance: Greater impairment for supercapacity set sizes suggests a deficit in the ability to selectively encode information for WM storage. Thus, the WM impairment in schizophrenia appears to be a consequence of attentional deficits rather than a reduction in storage capacity.

Method for refreshing a non-volatile memory

DOEpatents

Riekels, James E.; Schlesinger, Samuel

2008-11-04

A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

Robust image retrieval from noisy inputs using lattice associative memories

NASA Astrophysics Data System (ADS)

Urcid, Gonzalo; Nieves-V., José Angel; García-A., Anmi; Valdiviezo-N., Juan Carlos

2009-02-01

Lattice associative memories also known as morphological associative memories are fully connected feedforward neural networks with no hidden layers, whose computation at each node is carried out with lattice algebra operations. These networks are a relatively recent development in the field of associative memories that has proven to be an alternative way to work with sets of pattern pairs for which the storage and retrieval stages use minimax algebra. Different associative memory models have been proposed to cope with the problem of pattern recall under input degradations, such as occlusions or random noise, where input patterns can be composed of binary or real valued entries. In comparison to these and other artificial neural network memories, lattice algebra based memories display better performance for storage and recall capability; however, the computational techniques devised to achieve that purpose require additional processing or provide partial success when inputs are presented with undetermined noise levels. Robust retrieval capability of an associative memory model is usually expressed by a high percentage of perfect recalls from non-perfect input. The procedure described here uses noise masking defined by simple lattice operations together with appropriate metrics, such as the normalized mean squared error or signal to noise ratio, to boost the recall performance of either the min or max lattice auto-associative memories. Using a single lattice associative memory, illustrative examples are given that demonstrate the enhanced retrieval of correct gray-scale image associations from inputs corrupted with random noise.

Teuchos C++ memory management classes, idioms, and related topics, the complete reference : a comprehensive strategy for safe and efficient memory management in C++ for high performance computing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bartlett, Roscoe Ainsworth

2010-05-01

The ubiquitous use of raw pointers in higher-level code is the primary cause of all memory usage problems and memory leaks in C++ programs. This paper describes what might be considered a radical approach to the problem which is to encapsulate the use of all raw pointers and all raw calls to new and delete in higher-level C++ code. Instead, a set of cooperating template classes developed in the Trilinos package Teuchos are used to encapsulate every use of raw C++ pointers in every use case where it appears in high-level code. Included in the set of memory management classesmore » is the typical reference-counted smart pointer class similar to boost::shared ptr (and therefore C++0x std::shared ptr). However, what is missing in boost and the new standard library are non-reference counted classes for remaining use cases where raw C++ pointers would need to be used. These classes have a debug build mode where nearly all programmer errors are caught and gracefully reported at runtime. The default optimized build mode strips all runtime checks and allows the code to perform as efficiently as raw C++ pointers with reasonable usage. Also included is a novel approach for dealing with the circular references problem that imparts little extra overhead and is almost completely invisible to most of the code (unlike the boost and therefore C++0x approach). Rather than being a radical approach, encapsulating all raw C++ pointers is simply the logical progression of a trend in the C++ development and standards community that started with std::auto ptr and is continued (but not finished) with std::shared ptr in C++0x. Using the Teuchos reference-counted memory management classes allows one to remove unnecessary constraints in the use of objects by removing arbitrary lifetime ordering constraints which are a type of unnecessary coupling [23]. The code one writes with these classes will be more likely to be correct on first writing, will be less likely to contain silent (but deadly) memory usage errors, and will be much more robust to later refactoring and maintenance. The level of debug-mode runtime checking provided by the Teuchos memory management classes is stronger in many respects than what is provided by memory checking tools like Valgrind and Purify while being much less expensive. However, tools like Valgrind and Purify perform a number of types of checks (like usage of uninitialized memory) that makes these tools very valuable and therefore complement the Teuchos memory management debug-mode runtime checking. The Teuchos memory management classes and idioms largely address the technical issues in resolving the fragile built-in C++ memory management model (with the exception of circular references which has no easy solution but can be managed as discussed). All that remains is to teach these classes and idioms and expand their usage in C++ codes. The long-term viability of C++ as a usable and productive language depends on it. Otherwise, if C++ is no safer than C, then is the greater complexity of C++ worth what one gets as extra features? Given that C is smaller and easier to learn than C++ and since most programmers don't know object-orientation (or templates or X, Y, and Z features of C++) all that well anyway, then what really are most programmers getting extra out of C++ that would outweigh the extra complexity of C++ over C? C++ zealots will argue this point but the reality is that C++ popularity has peaked and is becoming less popular while the popularity of C has remained fairly stable over the last decade22. Idioms like are advocated in this paper can help to avert this trend but it will require wide community buy-in and a change in the way C++ is taught in order to have the greatest impact. To make these programs more secure, compiler vendors or static analysis tools (e.g. klocwork23) could implement a preprocessor-like language similar to OpenMP24 that would allow the programmer to declare (in comments) that certain blocks of code should be ''pointer-free'' or allow smaller blocks to be 'pointers allowed'. This would significantly improve the robustness of code that uses the memory management classes described here.« less

The Complexities of Complex Memory Span: Storage and Processing Deficits in Specific Language Impairment

ERIC Educational Resources Information Center

Archibald, Lisa M. D.; Gathercole, Susan E.

2007-01-01

This study investigated the verbal and visuospatial processing and storage skills of children with SLI and typically developing children. Fourteen school-age children with SLI, and two groups of typically developing children matched either for age or language abilities, completed measures of processing speed and storage capacity, and a set of…

How to Use Removable Mass Storage Memory Devices

ERIC Educational Resources Information Center

Branzburg, Jeffrey

2004-01-01

Mass storage refers to the variety of ways to keep large amounts of information that are used on a computer. Over the years, the removable storage devices have grown smaller, increased in capacity, and transferred the information to the computer faster. The 8" floppy disk of the 1960s stored 100 kilobytes, or about 60 typewritten, double-spaced…

Nonvolatile Analog Memory

NASA Technical Reports Server (NTRS)

MacLeod, Todd C. (Inventor)

2007-01-01

A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied thereto, and the second FFET has a storage voltage applied thereto that is indicative of the analog value. The saturation and storage voltages decay over time in accordance with a known decay function that is used to recover the original analog value when the pair of FFETs is read.

Creation of long-term coherent optical memory via controlled nonlinear interactions in Bose-Einstein condensates.

PubMed

Zhang, Rui; Garner, Sean R; Hau, Lene Vestergaard

2009-12-04

A Bose-Einstein condensate confined in an optical dipole trap is used to generate long-term coherent memory for light, and storage times of more than 1 s are observed. Phase coherence of the condensate as well as controlled manipulations of elastic and inelastic atomic scattering processes are utilized to increase the storage fidelity by several orders of magnitude over previous schemes. The results have important applications for creation of long-distance quantum networks and for generation of entangled states of light and matter.

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

NASA Astrophysics Data System (ADS)

Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

2014-11-01

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

Laser addressed holographic memory system

NASA Technical Reports Server (NTRS)

Gange, R. A.; Wagle, E. M.; Steinmetz, C. C.

1973-01-01

Holographic recall and storage system uses red-lipid microcrystalline wax as storage medium. When laser beam strikes wax, its energy heats point of incidence enough to pass wax through transition temperature. Holograph image can then be written or erased in softened wax.

Oxygen migration during resistance switching and failure of hafnium oxide memristors

DOE PAGES

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; ...

2017-03-06

While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Furthermore, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfO x memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information,more » we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.« less

CRAVE: a database, middleware and visualization system for phenotype ontologies.

PubMed

Gkoutos, Georgios V; Green, Eain C J; Greenaway, Simon; Blake, Andrew; Mallon, Ann-Marie; Hancock, John M

2005-04-01

A major challenge in modern biology is to link genome sequence information to organismal function. In many organisms this is being done by characterizing phenotypes resulting from mutations. Efficiently expressing phenotypic information requires combinatorial use of ontologies. However tools are not currently available to visualize combinations of ontologies. Here we describe CRAVE (Concept Relation Assay Value Explorer), a package allowing storage, active updating and visualization of multiple ontologies. CRAVE is a web-accessible JAVA application that accesses an underlying MySQL database of ontologies via a JAVA persistent middleware layer (Chameleon). This maps the database tables into discrete JAVA classes and creates memory resident, interlinked objects corresponding to the ontology data. These JAVA objects are accessed via calls through the middleware's application programming interface. CRAVE allows simultaneous display and linking of multiple ontologies and searching using Boolean and advanced searches.

Medical devices; hematology and pathology devices; classification of cord blood processing system and storage container. Final rule.

PubMed

2007-02-01

The Food and Drug Administration (FDA) is classifying a cord blood processing system and storage container into class II (special controls). The special control that will apply to this device is the guidance document entitled "Class II Special Controls Guidance Document: Cord Blood Processing System and Storage Container." FDA is classifying this device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of this device. Elsewhere in this issue of the Federal Register, FDA is announcing the availability of the guidance document that will serve as the special control for this device.

Unitary or Non-Unitary Nature of Working Memory? Evidence from Its Relation to General Fluid and Crystallized Intelligence

ERIC Educational Resources Information Center

Dang, Cai-Ping; Braeken, Johan; Ferrer, Emilio; Liu, Chang

2012-01-01

This study explored the controversy surrounding working memory: whether it is a unitary system providing general purpose resources or a more differentiated system with domain-specific sub-components. A total of 348 participants completed a set of 6 working memory tasks that systematically varied in storage target contents and type of information…

Contributions of Volumetrics of the Hippocampus and Thalamus to Verbal Memory in Temporal Lobe Epilepsy Patients

ERIC Educational Resources Information Center

Stewart, Christopher C.; Griffith, H. Randall; Okonkwo, Ozioma C.; Martin, Roy C.; Knowlton, Robert K.; Richardson, Elizabeth J.; Hermann, Bruce P.; Seidenberg, Michael

2009-01-01

Recent theories have posited that the hippocampus and thalamus serve distinct, yet related, roles in episodic memory. Whereas the hippocampus has been implicated in long-term memory encoding and storage, the thalamus, as a whole, has been implicated in the selection of items for subsequent encoding and the use of retrieval strategies. However,…

Frontal Neurons Modulate Memory Retrieval across Widely Varying Temporal Scales

ERIC Educational Resources Information Center

Zhang, Wen-Hua; Williams, Ziv M.

2015-01-01

Once a memory has formed, it is thought to undergo a gradual transition within the brain from short- to long-term storage. This putative process, however, also poses a unique problem to the memory system in that the same learned items must also be retrieved across broadly varying time scales. Here, we find that neurons in the ventrolateral…

Assessing the Relationship of Working Memory to L2 Reading: Does the Nature of Comprehension Process and Reading Span Task Make a Difference?

ERIC Educational Resources Information Center

Alptekin, Cem; Ercetin, Gulcan

2009-01-01

Although an important role has been ascribed to working-memory capacity in reading comprehension, little consensus exists on its conceptualization, operationalization, and measurement except for its recognition as a limited-capacity processing and storage system. One specific problem in the measurement of working memory comes from researchers' use…

Mental Schemas Hamper Memory Storage of Goal-Irrelevant Information

PubMed Central

Sweegers, C. C. G.; Coleman, G. A.; van Poppel, E. A. M.; Cox, R.; Talamini, L. M.

2015-01-01

Mental schemas exert top-down control on information processing, for instance by facilitating the storage of schema-related information. However, given capacity-limits and competition in neural network processing, schemas may additionally exert their effects by suppressing information with low momentary relevance. In particular, when existing schemas suffice to guide goal-directed behavior, this may actually reduce encoding of the redundant sensory input, in favor of gaining efficiency in task performance. The present experiment set out to test this schema-induced shallow encoding hypothesis. Our approach involved a memory task in which faces had to be coupled to homes. For half of the faces the responses could be guided by a pre-learned schema, for the other half of the faces such a schema was not available. Memory storage was compared between schema-congruent and schema-incongruent items. To characterize putative schema effects, memory was assessed both with regard to visual details and contextual aspects of each item. The depth of encoding was also assessed through an objective neural measure: the parietal old/new ERP effect. This ERP effect, observed between 500–800 ms post-stimulus onset, is thought to reflect the extent of recollection: the retrieval of a vivid memory, including various contextual details from the learning episode. We found that schema-congruency induced substantial impairments in item memory and even larger ones in context memory. Furthermore, the parietal old/new ERP effect indicated higher recollection for the schema-incongruent than the schema-congruent memories. The combined findings indicate that, when goals can be achieved using existing schemas, this can hinder the in-depth processing of novel input, impairing the formation of perceptually detailed and contextually rich memory traces. Taking into account both current and previous findings, we suggest that schemas can both positively and negatively bias the processing of sensory input. An important determinant in this matter is likely related to momentary goals, such that mental schemas facilitate memory processing of goal-relevant input, but suppress processing of goal-irrelevant information. Highlights – Schema-congruent information suffers from shallow encoding. – Schema congruency induces poor item and context memory. – The parietal old/new effect is less pronounced for schema-congruent items. – Schemas exert different influences on memory formation depending on current goals. PMID:26635582

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

PubMed

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

Disentangling the adult attention-deficit hyperactivity disorder endophenotype: parametric measurement of attention.

PubMed

Finke, Kathrin; Schwarzkopf, Wolfgang; Müller, Ulrich; Frodl, Thomas; Müller, Hermann J; Schneider, Werner X; Engel, Rolf R; Riedel, Michael; Möller, Hans-Jürgen; Hennig-Fast, Kristina

2011-11-01

Attention deficit hyperactivity disorder (ADHD) persists frequently into adulthood. The decomposition of endophenotypes by means of experimental neuro-cognitive assessment has the potential to improve diagnostic assessment, evaluation of treatment response, and disentanglement of genetic and environmental influences. We assessed four parameters of attentional capacity and selectivity derived from simple psychophysical tasks (verbal report of briefly presented letter displays) and based on a "theory of visual attention." These parameters are mathematically independent, quantitative measures, and previous studies have shown that they are highly sensitive for subtle attention deficits. Potential reductions of attentional capacity, that is, of perceptual processing speed and working memory storage capacity, were assessed with a whole report paradigm. Furthermore, possible pathologies of attentional selectivity, that is, selection of task-relevant information and bias in the spatial distribution of attention, were measured with a partial report paradigm. A group of 30 unmedicated adult ADHD patients and a group of 30 demographically matched healthy controls were tested. ADHD patients showed significant reductions of working memory storage capacity of a moderate to large effect size. Perceptual processing speed, task-based, and spatial selection were unaffected. The results imply a working memory deficit as an important source of behavioral impairments. The theory of visual attention parameter working memory storage capacity might constitute a quantifiable and testable endophenotype of ADHD.

Coherent optical pulse sequencer for quantum applications.

PubMed

Hosseini, Mahdi; Sparkes, Ben M; Hétet, Gabriel; Longdell, Jevon J; Lam, Ping Koy; Buchler, Ben C

2009-09-10

The bandwidth and versatility of optical devices have revolutionized information technology systems and communication networks. Precise and arbitrary control of an optical field that preserves optical coherence is an important requisite for many proposed photonic technologies. For quantum information applications, a device that allows storage and on-demand retrieval of arbitrary quantum states of light would form an ideal quantum optical memory. Recently, significant progress has been made in implementing atomic quantum memories using electromagnetically induced transparency, photon echo spectroscopy, off-resonance Raman spectroscopy and other atom-light interaction processes. Single-photon and bright-optical-field storage with quantum states have both been successfully demonstrated. Here we present a coherent optical memory based on photon echoes induced through controlled reversible inhomogeneous broadening. Our scheme allows storage of multiple pulses of light within a chosen frequency bandwidth, and stored pulses can be recalled in arbitrary order with any chosen delay between each recalled pulse. Furthermore, pulses can be time-compressed, time-stretched or split into multiple smaller pulses and recalled in several pieces at chosen times. Although our experimental results are so far limited to classical light pulses, our technique should enable the construction of an optical random-access memory for time-bin quantum information, and have potential applications in quantum information processing.

Electronic implementation of associative memory based on neural network models

NASA Technical Reports Server (NTRS)

Moopenn, A.; Lambe, John; Thakoor, A. P.

1987-01-01

An electronic embodiment of a neural network based associative memory in the form of a binary connection matrix is described. The nature of false memory errors, their effect on the information storage capacity of binary connection matrix memories, and a novel technique to eliminate such errors with the help of asymmetrical extra connections are discussed. The stability of the matrix memory system incorporating a unique local inhibition scheme is analyzed in terms of local minimization of an energy function. The memory's stability, dynamic behavior, and recall capability are investigated using a 32-'neuron' electronic neural network memory with a 1024-programmable binary connection matrix.

Noise reduction in optically controlled quantum memory

NASA Astrophysics Data System (ADS)

Ma, Lijun; Slattery, Oliver; Tang, Xiao

2018-05-01

Quantum memory is an essential tool for quantum communications systems and quantum computers. An important category of quantum memory, called optically controlled quantum memory, uses a strong classical beam to control the storage and re-emission of a single-photon signal through an atomic ensemble. In this type of memory, the residual light from the strong classical control beam can cause severe noise and degrade the system performance significantly. Efficiently suppressing this noise is a requirement for the successful implementation of optically controlled quantum memories. In this paper, we briefly introduce the latest and most common approaches to quantum memory and review the various noise-reduction techniques used in implementing them.

Functional integrity of the retrosplenial cortex is essential for rapid consolidation and recall of fear memory.

PubMed

Katche, Cynthia; Dorman, Guido; Slipczuk, Leandro; Cammarota, Martín; Medina, Jorge H

2013-03-15

Memory storage is a temporally graded process involving different phases and different structures in the mammalian brain. Cortical plasticity is essential to store stable memories, but little is known regarding its involvement in memory processing. Here we show that fear memory consolidation requires early post-training macromolecular synthesis in the anterior part of the retrosplenial cortex (aRSC), and that reversible pharmacological inactivation of this cortical region impairs recall of recent as well as of remote memories. These results challenge the generally accepted idea that neocortical areas are slow encoding systems that participate in the retrieval of remote memories only.

College students' memory for vocabulary in their majors: evidence for a nonlinear relation between knowledge and memory.

PubMed

DeMarie, Darlene; Aloise-Young, Patricia A; Prideaux, Cheri L; Muransky-Doran, Jean; Gerda, Julie Hart

2004-09-01

The effect of domain knowledge on students' memory for vocabulary terms was investigated. Participants were 142 college students (94 education majors and 48 business majors). The measure of domain knowledge was the number of courses completed in the major. Students recalled three different lists (control, education, and business) of 20 words. Knowledge effects were estimated controlling for academic aptitude, academic achievement, and general memory ability. Domain-specific knowledge consistently predicted recall, above and beyond the effect of these control variables. Moreover, nonlinear models better represented the relation between knowledge and memory, with very similar functions predicting recall in both knowledge domains. Specifically, early in the majors more classes corresponded with increased memory performance, but a plateau period, when more classes did not result in higher recall, was evident for both majors. Longitudinal research is needed to explore at what point in learning novices' performance begins to resemble experts' performance.

Natural Memory Beyond the Storage Model: Repression, Trauma, and the Construction of a Personal Past

PubMed Central

Axmacher, Nikolai; Do Lam, Anne T. A.; Kessler, Henrik; Fell, Juergen

2010-01-01

Naturally occurring memory processes show features which are difficult to investigate by conventional cognitive neuroscience paradigms. Distortions of memory for problematic contents are described both by psychoanalysis (internal conflicts) and research on post-traumatic stress disorder (PTSD; external traumata). Typically, declarative memory for these contents is impaired – possibly due to repression in the case of internal conflicts or due to dissociation in the case of external traumata – but they continue to exert an unconscious pathological influence: neurotic symptoms or psychosomatic disorders after repression or flashbacks and intrusions in PTSD after dissociation. Several experimental paradigms aim at investigating repression in healthy control subjects. We argue that these paradigms do not adequately operationalize the clinical process of repression, because they rely on an intentional inhibition of random stimuli (suppression). Furthermore, these paradigms ignore that memory distortions due to repression or dissociation are most accurately characterized by a lack of self-referential processing, resulting in an impaired integration of these contents into the self. This aspect of repression and dissociation cannot be captured by the concept of memory as a storage device which is usually employed in the cognitive neurosciences. It can only be assessed within the framework of a constructivist memory concept, according to which successful memory involves a reconstruction of experiences such that they fit into a representation of the self. We suggest several experimental paradigms that allow for the investigation of the neural correlates of repressed memories and trauma-induced memory distortions based on a constructivist memory concept. PMID:21151366