Sample records for substoichiometry
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Lin, Yen-Chen; Naveen, Vankadari; Molecular Cell Biology, Taiwan International Graduate Program, Institute of Molecular Biology, Academia Sinica, and Graduate Institute of Life Sciences, National Defense Medical Center, Taipei, Taiwan
During DNA replication, bacterial helicase is recruited as a complex in association with loader proteins to unwind the parental duplex. Previous structural studies have reported saturated 6:6 helicase-loader complexes with different conformations. However, structural information on the sub-stoichiometric conformations of these previously-documented helicase-loader complexes remains elusive. Here, with the aid of single particle electron-microscopy (EM) image reconstruction, we present the Geobacillus kaustophilus HTA426 helicase-loader (DnaC-DnaI) complex with a 6:2 binding stoichiometry in the presence of ATPγS. In the 19 Å resolution EM map, the undistorted and unopened helicase ring holds a robust loader density above the C-terminal RecA-like domain. Meanwhile, themore » path of the central DNA binding channel appears to be obstructed by the reconstructed loader density, implying its potential role as a checkpoint conformation to prevent the loading of immature complex onto DNA. Our data also reveals that the bound nucleotides and the consequently induced conformational changes in the helicase hexamer are essential for active association with loader proteins. These observations provide fundamental insights into the formation of the helicase-loader complex in bacteria that regulates the DNA replication process. - Highlights: • Helicase-loader complex structure with 6:2 sub-stoichiometry is resolved by EM. • Helicase hexamer in 6:2 sub-stoichiometry is constricted and un-opened. • 6:2 binding ratio of helicase-loader complex could act as a DNA loading checkpoint. • Nucleotides stabilize helicase-loader complex at low protein concentrations.« less
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Effect of composition and strain on the electrical properties of LaNiO3 thin films
NASA Astrophysics Data System (ADS)
Zhu, Mingwei; Komissinskiy, Philipp; Radetinac, Aldin; Vafaee, Mehran; Wang, Zhanjie; Alff, Lambert
2013-09-01
The Ni content of LaNi1-xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.
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NASA Astrophysics Data System (ADS)
Lou, J.; Ye, B. J.; Weng, H. M.; Du, H. J.; Wang, Z. B.; Wang, X. P.
2008-08-01
Tungsten oxide (WOx) nanostructures were prepared by a hot filament chemical vapour deposition system and the temperature of the hot tungsten filaments was changed by steps of degrees. The morphology and average growth rate were indicated by scanning electron microscopy which showed that the morphology was highly related to the filament temperature (Tf) and the distance between the filaments and the polished Si (1 0 0) substrates (df). The influence of Tf on the crystalline nature was studied by x-ray diffraction and Raman spectroscopy. The evolution of stoichiometry and types of defects was indicated by x-ray photoelectron spectroscopy and slow positron implantation spectroscopy. When Tf was up to 1750 °C, tungsten oxide nanostructure was synthesized. A turning point of Tf was found at which the nature of crystallinity and of stoichiometry was the best. As Tf increased to 2100 °C or df decreased, the film crystallinity decreased; correspondingly, the component ratio of stoichiometry WO3 decreased and lots of vacancy agglomerates were present. In order to develop the chemical phase from substoichiometry to stoichiometry, the oxygen gas concentration in the mixture gas during deposition should be raised to an appropriate level.
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Iyer, Abishek K.; Yin, Wenlong; Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900
The quaternary Ga-containing chalcogenides La{sub 3}Ag{sub 0.6}GaS{sub 7}, La{sub 3}Ag{sub 0.6}GaSe{sub 7}, La{sub 3}ZnGaSe{sub 7}, and La{sub 3}CdGaSe{sub 7}, as well as the related ternary chalcogenide La{sub 3}Ga{sub 1.67}S{sub 7}, were prepared by reactions of the elements at 950 °C. They adopt noncentrosymmetric hexagonal structures (space group P6{sub 3}, Z=2) with cell parameters (a=10.2 Å, c=6.1 Å for the sulfides; a=10.6 Å, c=6.4 Å for the selenides) that are largely controlled by the geometrical requirements of one-dimensional stacks of Ga-centered tetrahedra separated by the La atoms. Among these compounds, which share the common formulation La{sub 3}M{sub 1–x}GaCh{sub 7} (M=Ga, Ag,more » Zn, Cd; Ch=S, Se), the M atoms occupy sites within a stacking of trigonal antiprisms formed by Ch atoms. The location of the M site varies between extremes with trigonal antiprismatic (CN6) and trigonal planar (CN3) geometry. Partial occupation of these sites and intermediate ones accounts for the considerable versatility of these structures and the occurrence of large metal displacement parameters. The site occupations can be understood in a simple way as being driven by the need to satisfy appropriate bond valence sums for both the M and Ch atoms. Band structure calculations rationalize the substoichiometry observed in the Ag-containing compounds (La{sub 3}Ag{sub 0.6}GaS{sub 7}, La{sub 3}Ag{sub 0.6}GaSe{sub 7}) as a response to overbonding. X-ray photoelectron spectroscopy supports the presence of monovalent Ag atoms in these compounds, which are not charge-balanced. - Graphical abstract: Partial occupation of metal atoms in multiple sites accounts for versatility in Ga-containing chalcogenides La{sub 3}M{sub 1–x}GaCh{sub 7} with noncentrosymmetric hexagonal structures. - Highlights: • La{sub 3}M{sub 1–x}GaCh{sub 7} (M =Ga, Ag, Zn, Cd; Ch =S, Se) adopt related hexagonal structures. • Large displacements of M atoms originate from partial occupation of multiple sites. • Bond valence sum arguments give a simple explanation for site preference. • XPS studies confirm presence of monovalent Ag in La{sub 3}Ag{sub 0.6}GaCh{sub 7}. • Substoichiometry in La{sub 3}Ag{sub 0.6}GaCh{sub 7} avoids occupation of Ag–Ch antibonding levels.« less
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Raman spectroscopy analysis of air grown oxide scale developed on pure zirconium substrate
NASA Astrophysics Data System (ADS)
Kurpaska, L.; Favergeon, J.; Lahoche, L.; El-Marssi, M.; Grosseau Poussard, J.-L.; Moulin, G.; Roelandt, J.-M.
2015-11-01
Using Raman spectroscopy technique, external and internal parts of zirconia oxide films developed at 500 °C and 600 °C on pure zirconium substrate under air at normal atmospheric pressure have been examined. Comparison of Raman peak positions of tetragonal and monoclinic zirconia phases, recorded during the oxide growth at elevated temperature, and after cooling at room temperature have been presented. Subsequently, Raman peak positions (or shifts) were interpreted in relation with the stress evolution in the growing zirconia scale, especially closed to the metal/oxide interface, where the influence of compressive stress in the oxide is the biggest. Reported results, for the first time show the presence of a continuous layer of tetragonal zirconia phase developed in the proximity of pure zirconium substrate. Based on the Raman peak positions we prove that this tetragonal layer is stabilized by the high compressive stress and sub-stoichiometry level. Presence of the tetragonal phase located in the outer part of the scale have been confirmed, yet its Raman characteristics suggest a stress-free tetragonal phase, therefore different type of stabilization mechanism. Presented study suggest that its stabilization could be related to the lattice defects introduced by highstoichiometry of zirconia or presence of heterovalent cations.
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Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO 2-x
Lee, Hwasoo; Han, Su Jung; Seshadri, Ramachandran Chidambaram; ...
2016-11-04
The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultantmore » deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1, relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. Lastly, the results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.« less
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Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO 2-x
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Hwasoo; Han, Su Jung; Seshadri, Ramachandran Chidambaram
The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultantmore » deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1, relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. Lastly, the results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.« less
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Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO2-x.
Lee, Hwasoo; Han, Su Jung; Chidambaram Seshadri, Ramachandran; Sampath, Sanjay
2016-11-04
The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultant deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1 , relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2 . The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. The results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.
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Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO2−x
Lee, Hwasoo; Han, Su Jung; Chidambaram Seshadri, Ramachandran; Sampath, Sanjay
2016-01-01
The thermoelectric properties of sub-stoichiometric TiO2−x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO2−x deposits are formed through in-situ reaction of the TiO1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO2−x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultant deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of −230 μV K−1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 103 S m−1, relatively low thermal conductivity in the range of 1.5 to 2 W m−1 K−1 resulting in power factor of 2.9 μW cm−1 K−2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. The results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures. PMID:27811954
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DOE Office of Scientific and Technical Information (OSTI.GOV)
Estes, Shanna L.; Antonio, Mark R.; Soderholm, L.
2016-03-17
We describe the synthesis and characterization of three glycine-stabilized hexanuclear Cely cluster compounds, each containing the [Ce-6(mu(3)-O)(4)(mu(3)-OH)(4)](12+) core structure. Crystallized from aqueous nitrate solutions with pH < 0, the core cluster structures exhibit variable decoration by nitrate, glycine, and water ligands depending on solution conditions, where increased nitrate and glycine decoration of the cluster core was observed for crystals synthesized at high Ce and nitrate concentrations. No other crystalline products were observed using this synthetic route. In addition to confirming the tetravalent oxidation state of cerium in one of the reported clusters, cyclic voltammetry also indicates that Ce-IV is reducedmore » at similar to+0.60 V vs Ag/AgCl (3 M NaCl), which is significantly less than the standard electrode potential. This large decrease in the Ce-IV/Ce-III reduction potential suggests that Ce-IV is significantly stabilized relative to Ce-III within the examined cluster. These compounds are discussed in terms of their importance as small, end member, ceric oxide nanoparticles. Single-crystal structural solutions, together with voltammetry and electrolysis data, permit the decoupling of Ce-III defects and substoichiometry. In addition, Ce-Ce distances can be used to determine an "effective" CeO2-x lattice constant, providing a simple method for comparing literature descriptions. The results are discussed in terms of their potential implications for the mechanisms by which nanoparticle ceria serve as catalysts and oxygen-storage materials.« less
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NASA Astrophysics Data System (ADS)
Iyer, Abishek K.; Yin, Wenlong; Rudyk, Brent W.; Lin, Xinsong; Nilges, Tom; Mar, Arthur
2016-11-01
The quaternary Ga-containing chalcogenides La3Ag0.6GaS7, La3Ag0.6GaSe7, La3ZnGaSe7, and La3CdGaSe7, as well as the related ternary chalcogenide La3Ga1.67S7, were prepared by reactions of the elements at 950 °C. They adopt noncentrosymmetric hexagonal structures (space group P63, Z=2) with cell parameters (a=10.2 Å, c=6.1 Å for the sulfides; a=10.6 Å, c=6.4 Å for the selenides) that are largely controlled by the geometrical requirements of one-dimensional stacks of Ga-centered tetrahedra separated by the La atoms. Among these compounds, which share the common formulation La3M1-xGaCh7 (M=Ga, Ag, Zn, Cd; Ch=S, Se), the M atoms occupy sites within a stacking of trigonal antiprisms formed by Ch atoms. The location of the M site varies between extremes with trigonal antiprismatic (CN6) and trigonal planar (CN3) geometry. Partial occupation of these sites and intermediate ones accounts for the considerable versatility of these structures and the occurrence of large metal displacement parameters. The site occupations can be understood in a simple way as being driven by the need to satisfy appropriate bond valence sums for both the M and Ch atoms. Band structure calculations rationalize the substoichiometry observed in the Ag-containing compounds (La3Ag0.6GaS7, La3Ag0.6GaSe7) as a response to overbonding. X-ray photoelectron spectroscopy supports the presence of monovalent Ag atoms in these compounds, which are not charge-balanced.
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New Experimental Results on the Interaction of Molten Corium with Reactor Vessel Steel
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bechta, S.V.; Khabensky, V.B.; Granovsky, V.S.
In order to justify the concept of in-vessel core melt retention, it is necessary to understand the thermal and physico-chemical phenomena. Especially the interaction of the molten pool with the reactor vessel during outside cooling needs to be understood. These phenomena are very complex, in particular, where interactions with the oxidic melt are concerned. In the early stages of the retention process, the oxidic corium and the vessel steel interact under the conditions of low oxygen potential in the melt. These conditions can be simulated by a molten corium having the composition UO{sub 2}/ZrO{sub 2}/Zr, where the degree of Zr-oxidationmore » is in the range between 30 % (C-30) and 100 % (C-100). Corresponding experiments with prototypic melts at low oxygen potentials are being performed in the ISTC METCOR project 2. phase. These are: - MC 5 of corium composition 71w%UO{sub 2}-29w%ZrO{sub 2} (C-100) in neutral atmosphere (argon), - MC 6 of corium composition 76w%UO{sub 2}-9w%ZrO{sub 2}-15w%Zr (C{approx}30), also in argon. In test MC 5, the interaction of molten C-100 corium with a water-cooled steel specimen was studied for the following maximum temperatures at the specimen surface: 1075 deg. C, 1180 deg. C, 1315 deg. C and 1435 deg. C. The total duration of the experiment was {approx} 36 hours. The MC 5 test serves as a reference test for determining the characteristics of the interaction between oxidic melt and steel specimen under the conditions of minimum chemical interaction potential. To investigate the effect of substoichiometry, test No 6 was then performed with sub-oxidized molten corium C{approx}30. The maximum surface temperature of the cooled steel specimen was held at {approx} 1400 deg. C. The test duration was {approx} 10 hours. The ablation phenomena were found to differ significantly from those observed both in the reference test, as well as in former tests with oxidized melts, as they involved the formation of a low-melting metallic phase at the interface which contains iron, zirconium and uranium. The paper summarizes the results of the experiments and of the performed posttest analysis for tests MC 5 and MC 6. (authors)« less
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Kinetic and microstructural study of titanium nitride deposited by laser chemical vapor deposition
NASA Astrophysics Data System (ADS)
Egland, Keith Maynard
Titanium nitride (TiN) films were deposited onto Ti-6Al-4V substrates by laser chemical vapor deposition using a cw COsb2 laser and TiClsb4,\\ Nsb2, and Hsb2 reactant gases. In-situ laser induced fluorescence (LIF) and multi-wavelength pyrometry determined relative titanium gas phase atomic number density and deposition temperature, respectively. Deposited films were yellow to gold in color. Transmission electron microscopy on one sample revealed a face-centered cubic structure with a lattice parameter (0.4237 nm) expected for TiN. Auger electron spectroscopy found substoichiometric compositions with a N/Ti ratio between 0.7 and 0.9. Variables decreasing grain size (lower temperature, higher TiClsb4 input) decreased the N/Ti ratio. Higher Nsb2 input increased stoichiometry, while larger Hsb2 input decreased stoichiometry. The deposit substoichiometry is believed to be caused by diffusion of nitrogen through TiN grain boundaries to the titanium alloy substrate. The morphology starts as a dense polycrystalline structure evolving into a columnar structure having facets or nodules at the surface with crystallite sizes ranging from 10-1000 nm. TiClsb4 input had a inverse correlation with crystallite size, while Nsb2:Hsb2 ratio had minimal effect; the crystallite size (G) varied exponentially with temperature (T) for a given irradiation time, i.e., G = C exp (-28000/T), with constant C reflecting substrate roughness and gas composition. Microhardness tests revealed substrate contributions; nevertheless, films appeared to have a minimum hardness of 2000 Hsbv. The deposition apparent activation energy was calculated as 122 ± 9 kJ/mole using growth rates measured by film height and 117 ± 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above Nsb2 and Hsb2 levels of 1.25% and below TiClsb4 input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$r = {{kPsb{TiClsb4}Psb{Hsb2}Psbsp{Nsb2}{1/2}exp≤ft({{-}Esb{a}/ {RT}right)}/{1 + Psb{Ar}}}}.Since nitrogen positively affects growth rate (when added to a TiClsb4+Hsb2 mixture), stepwise reduction of TiClsb4 to Ti by hydrogen does not occur. NHsb{x} complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiClsb4$ by hydrogen.