Bypass diode for a solar cell

DOEpatents

Rim, Seung Bum [Palo Alto, CA; Kim, Taeseok [San Jose, CA; Smith, David D [Campbell, CA; Cousins, Peter J [Menlo Park, CA

2012-03-13

Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

1982-01-01

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

NASA Astrophysics Data System (ADS)

Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

2015-05-01

We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

Heterostructure solar cells

NASA Technical Reports Server (NTRS)

Chang, K. I.; Yeh, Y. C. M.; Iles, P. A.; Morris, R. K.

1987-01-01

The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases the substrate was thinned to reduce overall cell weight with good ruggedness. The conversion efficiency of 2 by 2 cm cells under AMO reached 17.1 percent with a cell thickness of 6 mils. The work described forms the basis for future cascade cell structures, where similar interconnecting problems between the top cell and the bottom cell must be solved. Applications of the GaAs/Ge solar cell in space and the expected payoffs are discussed.

Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

PubMed Central

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed. PMID:24459433

Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

PubMed

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

Method of manufacturing a hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2017-02-07

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey

The high cost of wafers suitable for epitaxial deposition of III-V solar cells has been a primary barrier to widespread use of these cells in low-concentration and one-sun terrestrial solar applications. A possible solution is to reuse the substrate many times, thus spreading its cost across many cells. We performed a bottom-up techno-economic analysis of three different strategies for substrate reuse in high-volume manufacturing: epitaxial lift-off, spalling, and the use of a porous germanium release layer. The analysis shows that the potential cost reduction resulting from substrate reuse is limited in all three strategies--not by the number of reuse cyclesmore » achievable, but by the costs that are incurred in each cycle to prepare the substrate for another epitaxial deposition. The dominant substrate-preparation cost component is different for each of the three strategies, and the cost-ranking of these strategies is subject to change if future developments substantially reduce the cost of epitaxial deposition.« less

Solar cell with silicon oxynitride dielectric layer

DOEpatents

Shepherd, Michael; Smith, David D

2015-04-28

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Better Back Contacts for Solar Cells on Flexible Substrates

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Ribelin, Rosine M.

2006-01-01

Improved low-resistance, semitransparent back contacts, and a method of fabricating them, have been developed for solar photovoltaic cells that are made from thin films of I-III-VI2 semiconductor materials on flexible, high-temperatureresistant polyimide substrates or superstrates. The innovative aspect of the present development lies in the extension, to polyimide substrates or superstrates, of a similar prior development of improved low-resistance, semitransparent back contacts for I-III-VI2 solar cells on glass substrates or superstrates. A cell incorporating this innovation can be used either as a stand-alone photovoltaic device or as part of a monolithic stack containing another photovoltaic device that utilizes light of longer wavelengths.

Front contact solar cell with formed electrically conducting layers on the front side and backside

DOEpatents

Cousins, Peter John

2012-06-26

A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

NASA Astrophysics Data System (ADS)

Dahal, Lila Raj

Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with 256 cells followed by ex-situ mapping SE on each cell to achieve better statistics for solar cell optimization by correlating local structural parameters with solar cell parameters. Solar cells of similar structure were also fabricated on flexible polymer substrates in the roll-to-roll configuration. In this configuration as well, RTSE was demonstrated as an effective process monitoring and control tool for thin film photovoltaics.

Data on the detail information of influence of substrate temperature on the film morphology and photovoltaic performance of non-fullerene organic solar cells.

PubMed

Zhang, Jicheng; Xie, SuFei; Lu, Zhen; Wu, Yang; Xiao, Hongmei; Zhang, Xuejuan; Li, Guangwu; Li, Cuihong; Chen, Xuebo; Ma, Wei; Bo, Zhishan

2017-10-01

This data contains additional data related to the article "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" (Jicheng Zhang et al., In press) [1]. Data include measurement and characterization instruments and condition, detail condition to fabricate norfullerene solar cell devices, hole-only and electron-only devices. Detail condition about how to control the film morphology of devices via tuning the temperature of substrates was also displayed. More information and more convincing data about the change of film morphology for active layers fabricated from different temperature, which is attached to the research article of "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" was given.

Studies of silicon p-n junction solar cells. [open circuit photovoltage

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1976-01-01

Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

Highly flexible InSnO electrodes on thin colourless polyimide substrate for high-performance flexible CH3NH3PbI3 perovskite solar cells

NASA Astrophysics Data System (ADS)

Park, Jeong-Il; Heo, Jin Hyuck; Park, Sung-Hyun; Hong, Ki Il; Jeong, Hak Gee; Im, Sang Hyuk; Kim, Han-Ki

2017-02-01

We fabricated high-performance flexible CH3NH3PbI3 (MAPbI3) perovskite solar cells with a power conversion efficiency of 15.5% on roll-to-roll sputtered ITO films on 60 μm-thick colourless polyimide (CPI) substrate. Due to the thermal stability of the CPI substrate, an ITO/CPI sample subjected to rapid thermal annealing at 300 °C showed a low sheet resistance of 57.8 Ω/square and high transmittance of 83.6%, which are better values than those of an ITO/PET sample. Outer and inner bending tests demonstrated that the mechanical flexibility of the ITO/CPI was superior to that of the conventional ITO/PET sample owing to the thinness of the CPI substrate. In addition, due to its good mechanical flexibility, the ITO/CPI showed no change in resistance after 10,000 cycle outer and inner dynamic fatigue tests. Flexible perovskite solar cells with the structure of Au/PTAA/MAPbI3/ZnO/ITO/CPI showed a high power conversion efficiency of 15.5%. The successful operation of these flexible perovskite solar cells on ITO/CPI substrate indicated that the ITO film on thermally stable CPI substrate is a promising of flexible substrate for high-temperature processing, a finding likely to advance the commercialization of cost-efficient flexible perovskite solar cells.

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

NASA Astrophysics Data System (ADS)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of InP/Si substrates for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate cost since the current prices for commercial InP substrates are much higher than those for Si substrates by two orders of magnitude. Direct heteroepitaxial growth of InP thin films on Si substrates has not produced the low dislocation-density high quality layers required for active InGaAs/InP in optoelectronic devices due to the ˜8% lattice mismatch between InP and Si. We successfully fabricated InP/Si substrates by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. The thickness of the exfoliated InP films was only 900 nm, which means hundreds of the InP/Si substrates could be prepared from a single InP wafer in principle. The photovoltaic current-voltage characteristics of the In0.53Ga0.47As cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ˜20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. We have observed photocurrent enhancements up to 260% at 900 nm for a GaAs cell with a dense array of Ag nanoparticles with 150 nm diameter and 20 nm height deposited through porous alumina membranes by thermal evaporation on top of the cell, relative to reference GaAs cells with no metal nanoparticle array. This dramatic photocurrent enhancement is attributed to the effect of metal nanoparticles to scatter the incident light into photovoltaic layers with a wide range of angles to increase the optical path length in the absorber layer. GaAs solar cells with metallic structures at the bottom of the photovoltaic active layers, not only at the top, using semiconductor-metal direct bonding have been fabricated. These metallic back structures could incouple the incident light into surface plasmon mode propagating at the semiconductor/metal interface to increase the optical path, as well as simply act as back reflector, and we have observed significantly increased short-circuit current relative to reference cells without these metal components. (Abstract shortened by UMI.)

Development of Thin Solar Cells for Space Applications at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Dickman, John E.; Hepp, Aloysius; Banger, Kulbinder K.; Harris, Jerry D.; Jin, Michael H.

2003-01-01

NASA GRC Thin Film Solar Cell program is developing solar cell technologies for space applications which address two critical metrics: higher specific power (power per unit mass) and lower launch stowed volume. To be considered for space applications, an array using thin film solar cells must offer significantly higher specific power while reducing stowed volume compared to the present technologies being flown on space missions, namely crystalline solar cells. The NASA GRC program is developing single-source precursors and the requisite deposition hardware to grow high-efficiency, thin-film solar cells on polymer substrates at low deposition temperatures. Using low deposition temperatures enables the thin film solar cells to be grown on a variety of polymer substrates, many of which would not survive the high temperature processing currently used to fabricate thin film solar cells. The talk will present the latest results of this research program.

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1978-01-01

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Workshop on Heteroepitaxial InP Solar Cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Walters, R. W.

1993-01-01

In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

High-efficiency robust perovskite solar cells on ultrathin flexible substrates

PubMed Central

Li, Yaowen; Meng, Lei; Yang, Yang (Michael); Xu, Guiying; Hong, Ziruo; Chen, Qi; You, Jingbi; Li, Gang; Yang, Yang; Li, Yongfang

2016-01-01

Wide applications of personal consumer electronics have triggered tremendous need for portable power sources featuring light-weight and mechanical flexibility. Perovskite solar cells offer a compelling combination of low-cost and high device performance. Here we demonstrate high-performance planar heterojunction perovskite solar cells constructed on highly flexible and ultrathin silver-mesh/conducting polymer substrates. The device performance is comparable to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion efficiency of 14.0%, while the specific power (the ratio of power to device weight) reaches 1.96 kW kg−1, given the fact that the device is constructed on a 57-μm-thick polyethylene terephthalate based substrate. The flexible device also demonstrates excellent robustness against mechanical deformation, retaining >95% of its original efficiency after 5,000 times fully bending. Our results confirmed that perovskite thin films are fully compatible with our flexible substrates, and are thus promising for future applications in flexible and bendable solar cells. PMID:26750664

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cavalli, Alessandro; Johnston, Steven; Sulas, Dana

Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for epitaxial liftoff, which would help reduce costs, but chemo- mechanical polishing after liftoff tends to limit the potential cost savings. Growth on an unpolished spalled surface would be an additional step toward lower costs, but it is crucial to show high efficiency solar cell devices on these unprocessed substrates. In this study, we spalled 2-inch Ge wafers using a Ni stressor layer, and then grew GaAs solar cells by HVPE on themore » spalled Ge surface without any other surface treatment. We show a 12.8% efficient single-junction device, without anti-reflection coating, with quantum efficiency very close to identical devices grown by HVPE on non-spalled GaAs substrates. Demonstrating a high carrier collection on unpolished spalled wafers is a step toward reducing substrate-related liftoff and reuse costs.« less

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

Dip-Coating Fabrication of Solar Cells

NASA Technical Reports Server (NTRS)

Koepke, B.; Suave, D.

1982-01-01

Inexpensive silicon solar cells made by simple dip technique. Cooling shoes direct flow of helium on graphite-coated ceramic substrate to solidify film of liquid silicon on graphite surface as substrate is withdrawn from molten silicon. After heaters control cooling of film and substrate to prevent cracking. Gas jets exit at points about 10 mm from substrate surfaces and 6 to 10 mm above melt surface.

Low-Temperature Growth of Amorphous Silicon Films and Direct Fabrication of Solar Cells on Flexible Polyimide and Photo-Paper Substrates

NASA Astrophysics Data System (ADS)

Madaka, Ramakrishna; Kanneboina, Venkanna; Agarwal, Pratima

2018-05-01

Direct deposition of hydrogenated amorphous silicon (a-Si:H) thin films and fabrication of solar cells on polyimide (PI) and photo-paper (PP) substrates using a rf-plasma-enhanced chemical vapor deposition technique is reported. Intrinsic amorphous silicon films were deposited on PI and PP substrates by varying the substrate temperature (T s) over 70-150°C to optimize the deposition parameters for best quality films. The films deposited on both PI and PP substrates at a temperature as low as 70°C showed a photosensitivity (σ ph/σ d) of nearly 4 orders of magnitude which increased to 5-6 orders of magnitude when the substrate temperature was increased to 130-150°C. The increase in σ ph/σ d is due to the presence of a few nanometer-sized crystallites embedded in the film. Solar cells (n-i-p) were fabricated directly on PI, PP and Corning 1737 glass (Corning) at 150°C for different thicknesses of an intrinsic amorphous silicon layer (i-layer). With the increase in i-layer thickness from 330 nm to 700 nm, the solar cell efficiency was found to increase from 3.81% to 5.02% on the Corning substrate whereas on the flexible PI substrate an increase from 3.38% to 4.38% was observed. On the other hand, in the case of cells on PP, the i-layer thickness was varied from 200 nm to 700 nm and the best cell efficiency 1.54% was obtained for the 200-nm-thick i-layer. The fabrication of a-Si (n-i-p) solar cells on photo-paper is presented for the first time.

Investigations on effect of laser-induced self-assembled patterning on optical properties of flexible polyimide substrates for solar cell applications

NASA Astrophysics Data System (ADS)

Shukla, Ashish K.; Yadav, Vinayak M.; Kumar, Akash; Palani, I. A.; Manivannan, Anbarasu

2018-01-01

Polyimide (PI) offers promising features such as high strength and excellent thermal stability for flexible solar panels. The flexible solar cell demands maximum absorption of solar insolation through stacked layers to enhance its performance. However, the fluorescence emission (FE) in inactive polyimide substrate hinders the absorption of irradiated solar energy. In this research work, an attempt has been made to generate rippled morphology on PI substrate using laser processing that enhances the absorption and moderates the FE. These changes are confirmed by calculating the Urbach energy (Eu) of the rippled structure, which is found to be 2.5 times that of the pristine substrate. Furthermore, to reduce the FE, tungsten (W) was coated on the rippled structure of the laser-processed PI, and a significant reduction of 70% FE is achieved compared to the FE of unprocessed PI. These enhanced characteristics of PI obtained by laser processing will be highly helpful for improving the overall performance of flexible solar cells.

Entirely screen printed CdS/CdTe solar cell

NASA Astrophysics Data System (ADS)

Ikegami, S.; Matsumoto, H.; Uda, H.; Komatsu, Y.; Nakano, A.; Kuribayashi, K.

An entirely screen printed CdS/CdTe solar cell has been manufactured on a borosilicate glass substrate by successively repeating screen printing and heating in a belt furnace of each paste of CdS, Cd+Te, C, Ag+In and Ag. In a small cell with 0.78 sq cm area, the intrinsic conversion efficiency of 12.8 percent has been obtained; this value is the highest in the thin film type solar cells. On a large glass substrate of 30 x 30 sq cm, 28 unit solar cells connected in series have been constructed by this printing technique, their intrinsic efficiency being 8.5 percent. Under the roof top condition, no change in output power is observed in the present solar cells encapsulated over 206 days. Thus, the entirely screen printed CdS/CdTe solar cells can be expected as low cost, highly efficient, and stable solar cells.

A lightweight solar array study

NASA Technical Reports Server (NTRS)

Josephs, R. H.

1977-01-01

A sample module was assembled to model a portion of a flexible extendable solar array, a type that promises to become the next generation of solar array design. The resulting study of this module is intended to provide technical support to the array designer for lightweight component selection, specifications, and tests. Selected from available lightweight components were 127-micron-thick wrap-around contacted solar cells, 34- micron-thick sputtered glass covers, and as a substrate a 13-micron-thick polyimide film clad with a copper printed circuit. Each component displayed weaknesses. The thin solar cells had excessive breakage losses. Sputtered glass cover adhesion was poor, and the covered cell was weaker than the cell uncovered. Thermal stresses caused some cell delamination from the model solar array substrate.

Integrated Antenna/Solar Array Cell (IA/SAC) System for Flexible Access Communications

NASA Technical Reports Server (NTRS)

Lee, Ricard Q.; Clark, Eric B.; Pal, Anna Maria T.; Wilt, David M.; Mueller, Carl H.

2004-01-01

Present satellite communications systems normally use separate solar cells and antennas. Since solar cells generally account for the largest surface area of the spacecraft, co-locating the antenna and solar cells on the same substrate opens the possibility for a number of data-rate-enhancing communications link architecture that would have minimal impact on spacecraft weight and size. The idea of integrating printed planar antenna and solar array cells on the same surface has been reported in the literature. The early work merely attempted to demonstrate the feasibility by placing commercial solar cells besides a patch antenna. Recently, Integrating multiple antenna elements and solar cell arrays on the same surface was reported for both space and terrestrial applications. The application of photovoltaic solar cell in a planar antenna structure where the radiating patch antenna is replaced by a Si solar cell has been demonstrated in wireless communication systems (C. Bendel, J. Kirchhof and N. Henze, 3rd Would Photovotaic Congress, Osaka, Japan, May 2003). Based on a hybrid approach, a 6x1 slot array with circularly polarized crossdipole elements co-located on the same surface of the solar cells array has been demonstrated (S. Vaccaro, J. R. Mosig and P. de Maagt, IEEE Trans. Ant. and Propag., Vol. 5 1, No. 8, Aug. 2003). Amorphous silicon solar cells with about 5-10% efficiency were used in these demonstrations. This paper describes recent effort to integrate advanced solar cells with printed planar antennas. Compared to prior art, the proposed WSAC concept is unique in the following ways: 1) Active antenna element will be used to achieve dynamic beam steering; 2) High efficiency (30%) GaAs multi-junction solar cells will be used instead of Si, which has an efficiency of about 15%; 3) Antenna and solar cells are integrated on a common GaAs substrate; and 4) Higher data rate capability. The IA/SAC is designed to operate at X-band (8-12 GH) and higher frequencies Higher operating frequencies enable greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of GaAs solar cell MIMs (Monolithically Integrated Module) with a single patch antenna on the opposite side of the substrate. Subsequent work will involve the integration of MIMs and antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Method for producing textured substrates for thin-film photovoltaic cells

DOEpatents

Lauf, R.J.

1996-04-02

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Method for producing textured substrates for thin-film photovoltaic cells

DOEpatents

Lauf, R.J.

1994-04-26

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Method for producing textured substrates for thin-film photovoltaic cells

DOEpatents

Lauf, Robert J.

1994-01-01

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Method for producing textured substrates for thin-film photovoltaic cells

DOEpatents

Lauf, Robert J.

1996-01-01

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Hydrogenated amorphous silicon solar cells fabricated at low substrate temperature 110°C on flexible PET substrate

NASA Astrophysics Data System (ADS)

Ramakrishna, M.; Kumari, Juhi; Venkanna, K.; Agarwal, Pratima

2018-05-01

In this paper, we report a-Si:H solar cells fabricated on flexible Polyethylene terephthalate (PET) and corning glass. The a-Si:H thin films were prepared at low substrate temperature (110oC) on corning 1737 glass with different rf powers. The influence of rf power on structural and optoelectronic properties of i-a-Si:H were studied. The films deposited at rf power 50W show less broadening of <ɛ2> peak. This indicates these films are more ordered. With this optimized parameter for i-layer, solar cells fabricated on flexible PET substrate show best efficiency of 3.3% whereas on corning glass 3.82%.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

NASA Astrophysics Data System (ADS)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

Choice of Substrate Material for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2015-06-14

Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

Solar cell shingle

NASA Technical Reports Server (NTRS)

Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G. (Inventor)

1977-01-01

A solar cell shingle was made of an array of solar cells on a lower portion of a substantially rectangular shingle substrate made of fiberglass cloth or the like. The solar cells may be encapsulated in flourinated ethylene propylene or some other weatherproof translucent or transparent encapsulant to form a combined electrical module and a roof shingle. The interconnected solar cells were connected to connectors at the edge of the substrate through a connection to a common electrical bus or busses. An overlap area was arranged to receive the overlap of a cooperating similar shingle so that the cell portion of the cooperating shingle may overlie the overlap area of the roof shingle. Accordingly, the same shingle serves the double function of an ordinary roof shingle which may be applied in the usual way and an array of cooperating solar cells from which electrical energy may be collected.

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

NASA Technical Reports Server (NTRS)

Pryor, R. A.

1980-01-01

Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

NASA Astrophysics Data System (ADS)

de Jong, M. M.

2013-01-01

In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the nanocrystalline silicon (nc-Si) regime. In the nc-Si regime, the crystalline fraction can be further controlled by changing the power input into the plasma. With these layers, a-Si thin film solar cells were fabricated, on glass and PC substrates. The adverse effect of the low temperature growth on the photoactive material is further mitigated by using thinner silicon layers, which can deliver a good current only with an adequate light trapping technique. We have simulated and experimentally tested three light trapping techniques, using embossed structures in PC substrates and random structures on glass: regular pyramid structures larger than the wavelength of light (micropyramids), regular pyramid structures comparable to the wavelength of light (nanopyramids) and random nano-textures (Asahi U-type). The use of nanostructured polycarbonate substrates results in initial conversion efficiencies of 7.4%, compared to 7.6% for cells deposited under identical conditions on Asahi U-type glass. The potential of manufacturing thin film solar cells at processing temperatures lower than 130oC is further illustrated by obtained results on texture-etched aluminium doped zinc-oxide (ZnO:Al) on glass: we achieved 6.9% for nc-Si cells using a very thin absorber layer of only 750 nm, and by combining a-Si and nc-Si cells in tandem solar cells we reached an initial conversion efficiency of 9.5%.

Application of semiconductor diffusants to solar cells by screen printing

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Brandhorst, H. W., Jr.; Mazaris, G. A.; Scudder, L. R. (Inventor)

1978-01-01

Diffusants were applied onto semiconductor solar cell substrates, using screen printing techniques. The method was applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.

Assembling solar-cell arrays

NASA Technical Reports Server (NTRS)

Bloch, J. T.; Hanger, R. T.; Nichols, F. W.

1979-01-01

Modified 70 mm movie film editor automatically attaches solar cells to flexible film substrate. Machine can rapidly and inexpensively assemble cells for solar panels at rate of 250 cells per minute. Further development is expected to boost production rate to 1000 cells per minute.

Summary of Workshop on InP: Status and Prospects

NASA Technical Reports Server (NTRS)

Walters, R. J.; Weinberg, I.

1994-01-01

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

High-Performance Flexible Perovskite Solar Cells by Using a Combination of Ultrasonic Spray-Coating and Low Thermal Budget Photonic Curing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanjib, Das; Yang, Bin; Gu, Gong

Realizing the commercialization of high-performance and robust perovskite solar cells urgently requires the development of economically scalable processing techniques. Here we report a high-throughput ultrasonic spray-coating (USC) process capable of fabricating perovskite film-based solar cells on glass substrates with power conversion efficiency (PCE) as high as 13.04%. Perovskite films with high uniformity, crystallinity, and surface coverage are obtained in a single step. Moreover, we report USC processing on TiOx/ITO-coated polyethylene terephthalate (PET) substrates to realize flexible perovskite solar cells with PCE as high as 8.02% that are robust under mechanical stress. In this case, an optical curing technique was usedmore » to achieve a highly-conductive TiOx layer on flexible PET substrates for the first time. The high device performance and reliability obtained by this combination of USC processing with optical curing appears very promising for roll-to-roll manufacturing of high-efficiency, flexible perovskite solar cells.« less

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology

NASA Astrophysics Data System (ADS)

Colin, Clément; Jaouad, Abdelatif; Darnon, Maxime; De Lafontaine, Mathieu; Volatier, Maïté; Boucherif, Abderraouf; Arès, Richard; Fafard, Simon; Aimez, Vincent

2017-09-01

In this paper, we investigate the development of a robust handling process for thin (<50 µm) substrates in the framework of the monolithic multi-junction solar cell (MJSC) technology. The process, designed for its versatility, is based on a temporary front side bonding of the cell with a polymeric adhesive and then a permanent back side soldering, allowing classical cell micro-fabrication steps on both sides of the wafer. We have demonstrated that the process does not degrade the performances of monolithic MJSC with Ge substrates thickness reduced from 170 µm to 25 µm. Then, we investigate a perspective unlocked with this work: the study of 3D-interconnect architecture for multi-junction solar cells.

Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

PubMed

Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

2011-09-18

Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

Back reflectors based on buried Al{sub 2}O{sub 3} for enhancement of photon recycling in monolithic, on-substrate III-V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

García, I.; Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda Complutense s/n, 28040 Madrid; Kearns-McCoy, C. F.

Photon management has been shown to be a fruitful way to boost the open circuit voltage and efficiency of high quality solar cells. Metal or low-index dielectric-based back reflectors can be used to confine the reemitted photons and enhance photon recycling. Gaining access to the back of the solar cell for placing these reflectors implies having to remove the substrate, with the associated added complexity to the solar cell manufacturing. In this work, we analyze the effectiveness of a single-layer reflector placed at the back of on-substrate solar cells, and assess the photon recycling improvement as a function of themore » refractive index of this layer. Al{sub 2}O{sub 3}-based reflectors, created by lateral oxidation of an AlAs layer, are identified as a feasible choice for on-substrate solar cells, which can produce a V{sub oc} increase of around 65% of the maximum increase attainable with an ideal reflector. The experimental results obtained using prototype GaAs cell structures show a greater than two-fold increase in the external radiative efficiency and a V{sub oc} increase of ∼2% (∼18 mV), consistent with theoretical calculations. For GaAs cells with higher internal luminescence, this V{sub oc} boost is calculated to be up to 4% relative (36 mV), which directly translates into at least 4% higher relative efficiency.« less

Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD

NASA Astrophysics Data System (ADS)

Li, Hongbo

2007-09-01

With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic systems, can play a major role in the urgently needed energy transition in electricity production. Solar cells based on thin film silicon and its alloys are a promising candidate that is capable of fulfilling the fast increasing demand of a reliable solar cell supply. The conventional method to deposit silicon thin films is based on plasma enhanced chemical vapour deposition (PECVD) techniques, which have the disadvantage of increasing film inhomogeneity at a high deposition rate when scaling up for the industrial production. In this thesis, we study the possibility of making high efficiency single and multijunction thin film silicon solar cells with the so-called hot-wire CVD technique, in which no strong electromagnetic field is involved in the deposition. Therefore, the up-scaling for industrial production is straightforward. We report and discuss our findings on the correlation of substrate surface rms roughness and the main output parameter of a solar cell, the open circuit voltage Voc of c-Si:H n i p cells. By considering all the possible reasons that could influence the Voc of such cells, we conclude that the near linear correlation of Voc and substrate surface rms roughness is the result the two most probable reasons: the unintentional doping through the cracks originated near the valleys of the substrate surface due to the in-diffusion of impurities, and the high density electrical defects formed by the collision of columnar silicon structures. Both of them relate to the morphology of substrate surface. Therefore, to have the best cell performance on a rough substrate surface, a good control on the substrate surface morphology is necessary. Another issue influencing the performance of c-Si:H solar cells is the change in layer crystallinity during the growth of the c-Si:H i-layer. For PECVD deposited cells, it is often found that the layer crystallinity is enhanced with increasing film thickness. We found for Hot-wire deposited cells, however, the opposite development in material structure: the material becomes amorphous near the end of the deposition. This results in a deterioration of cell performance. We therefore introduce a so-called H2 reverse profiling technique, in which H2 is increased during the c-Si:H i-layer deposition. With this technique, a cell with an efficiency of 8.5% has been reached, which is in line with the best reported PECVD cells deposited on the same type of substrate. In the literature, carrier transport in c-Si:H cells has been a topic for debate. In this thesis, we present our finding of photogating effect on the spectral response of c-Si:H solar cells. When measured under coloured bias light, the apparent quantum efficiency value of a c-Si:H cell can be largely enhanced. This phenomenon is a typical result of trapping induced field modification in the bulk of a drift type solar cell. The discovery of this phenomenon has experimentally proved that field-driven transport to a large extend exist in a c-Si:H solar cell.

Method of fabricating bifacial tandem solar cells

DOEpatents

Wojtczuk, Steven J; Chiu, Philip T; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

2014-10-07

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Bifacial tandem solar cells

DOEpatents

Wojtczuk, Steven J.; Chiu, Philip T.; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

2016-06-14

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Influence of design variables on radiation hardness of silicon MINP solar cells

NASA Technical Reports Server (NTRS)

Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

1985-01-01

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

Bypass diode for a solar cell

DOEpatents

Rim, Seung Bum; Kim, Taeseok; Smith, David D; Cousins, Peter J

2013-11-12

Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

Selective dissolution of halide perovskites as a step towards recycling solar cells

NASA Astrophysics Data System (ADS)

Kim, Byeong Jo; Kim, Dong Hoe; Kwon, Seung Lee; Park, So Yeon; Li, Zhen; Zhu, Kai; Jung, Hyun Suk

2016-05-01

Most research on perovskite solar cells has focused on improving power-conversion efficiency and stability. However, if one could refurbish perovskite solar cells, their stability might not be a critical issue. From the perspective of cost effectiveness, if failed, perovskite solar cells could be collected and recycled; reuse of their gold electrodes and transparent conducting glasses could reduce the price per watt of perovskite photovoltaic modules. Herein, we present a simple and effective method for removing the perovskite layer and reusing the mesoporous TiO2-coated transparent conducting glass substrate via selective dissolution. We find that the perovskite layer can be easily decomposed in polar aprotic solvents because of the reaction between polar aprotic solvents and Pb2+ cations. After 10 cycles of recycling, a mesoporous TiO2-coated transparent conducting glass substrate-based perovskite solar cell still shows a constant power-conversion efficiency, thereby demonstrating the possibility of recycling perovskite solar cells.

Selective dissolution of halide perovskites as a step towards recycling solar cells.

PubMed

Kim, Byeong Jo; Kim, Dong Hoe; Kwon, Seung Lee; Park, So Yeon; Li, Zhen; Zhu, Kai; Jung, Hyun Suk

2016-05-23

Most research on perovskite solar cells has focused on improving power-conversion efficiency and stability. However, if one could refurbish perovskite solar cells, their stability might not be a critical issue. From the perspective of cost effectiveness, if failed, perovskite solar cells could be collected and recycled; reuse of their gold electrodes and transparent conducting glasses could reduce the price per watt of perovskite photovoltaic modules. Herein, we present a simple and effective method for removing the perovskite layer and reusing the mesoporous TiO2-coated transparent conducting glass substrate via selective dissolution. We find that the perovskite layer can be easily decomposed in polar aprotic solvents because of the reaction between polar aprotic solvents and Pb(2+) cations. After 10 cycles of recycling, a mesoporous TiO2-coated transparent conducting glass substrate-based perovskite solar cell still shows a constant power-conversion efficiency, thereby demonstrating the possibility of recycling perovskite solar cells.

Solar power roof shingle

NASA Technical Reports Server (NTRS)

Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G.

1975-01-01

Silicon solar cell module provides both all-weather protection and electrical power. Module consists of array of circular silicon solar cells bonded to fiberglass substrate roof shingle with fluorinated ethylene propylene encapsulant.

Feasibility study of a 110 watt per kilogram lightweight solar array system

NASA Technical Reports Server (NTRS)

Shepard, N. F.; Stahle, C. V.; Hanson, K. L.; Schneider, A.; Blomstrom, L. E.; Hansen, W. T.; Kirpich, A.

1973-01-01

The feasibility of a 10,000 watt solar array panel which has a minimum power-to-mass ratio of 110 watt/kg is discussed. The application of this ultralightweight solar array to three possible missions was investigated. With the interplanetary mission as a baseline, the constraining requirements for a geosynchronous mission and for a manned space station mission are presented. A review of existing lightweight solar array system concepts revealed that changes in the system approach are necessary to achieve the specified 110 watt/kg goal. A comprehensive review of existing component technology is presented in the areas of thin solar cells, solar cell covers, welded interconnectors, substrates and deployable booms. Advances in the state-of-the-art of solar cell and deployable boom technology were investigated. System level trade studies required to select the optimum boom bending stiffness, system aspect ratio, bus voltage level, and solar cell circuit arrangement are reported. Design analysis tasks included the thermal analysis of the solar cell blanket, thermal stress analysis of the solar cell interconnectors/substrate, and the thermostructural loading of the deployed boom.

Monolithic tandem solar cell

DOEpatents

Wanlass, Mark W.

1991-01-01

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Chemical Fabrication Used to Produce Thin-Film Materials for High Power-to- Weight-Ratio Space Photovoltaic Arrays

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Rybicki, George C.; Raffaelle, Ryne P.; Harris, Jerry D.; Hehemann, David G.; Junek, William; Gorse, Joseph; Thompson, Tracy L.; Hollingsworth, Jennifer A.; Buhro, William E.

2000-01-01

The key to achieving high specific power (watts per kilogram) space solar arrays is the development of a high-efficiency, thin-film solar cell that can be fabricated directly on a flexible, lightweight, space-qualified durable substrate such as Kapton (DuPont) or other polyimide or suitable polymer film. Cell efficiencies approaching 20 percent at AM0 (air mass zero) are required. Current thin-film cell fabrication approaches are limited by either (1) the ultimate efficiency that can be achieved with the device material and structure or (2) the requirement for high-temperature deposition processes that are incompatible with all presently known flexible polyimide or other polymer substrate materials. Cell fabrication processes must be developed that will produce high-efficiency cells at temperatures below 400 degrees Celsius, and preferably below 300 degress Celsius to minimize the problems associated with the difference between the coefficients of thermal expansion of the substrate and thin-film solar cell and/or the decomposition of the substrate.

Manufacture of Solar Cells on the Moon

NASA Technical Reports Server (NTRS)

Freundich, Alex; Ignatiev, Alex; Horton, Charles; Duke, Mike; Curren, Peter; Sibille, Laurent

2005-01-01

In support of the space exploration initiative a new architecture for the production of solar cells on the lunar surface is devised. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin film (antireflect coatings and insulators), and preliminary attempts in the fabrication of thin film (silicon/II-VI) photovoltaic materials on lunar regolith substrates. A conceptual design for a solar powered robotic rover capable of fabricating solar cells directly on the lunar surface is provided. Technical challenges in the development of such a facility and strategies to alleviate perceived difficulties are discussed. Finally, preliminary cost benefit ratio analysis for different in situ solar cell production scenarios (using exclusively in-situ planetary resources or hybrid) are discussed.

Fabrication of polycrystalline solar cells on low-cost substrates

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1976-01-01

A new method of producing p-n junction semiconductors for solar cells was described; the principal objective of this investigation is to reduce production costs significantly by depositing polycrystalline silicon on a relatively cheap substrate such as metallurgical-grade silicon, graphite, or steel. The silicon layer contains appropriate dopants, and the substrates are coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures of these compounds.

Fabrication of contacts for silicon solar cells including printing burn through layers

DOEpatents

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

1978-01-01

The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

Recyclable organic solar cells on substrates comprising cellulose nanocrystals (CNC)

DOEpatents

Kippelen, Bernard; Fuentes-Hernandez, Canek; Zhou, Yinhua; Moon, Robert; Youngblood, Jeffrey P

2015-12-01

Recyclable organic solar cells are disclosed herein. Systems and methods are further disclosed for producing, improving performance, and for recycling the solar cells. In certain example embodiments, the recyclable organic solar cells disclosed herein include: a first electrode; a second electrode; a photoactive layer disposed between the first electrode and the second electrode; an interlayer comprising a Lewis basic oligomer or polymer disposed between the photoactive layer and at least a portion of the first electrode or the second electrode; and a substrate disposed adjacent to the first electrode or the second electrode. The interlayer reduces the work function associated with the first or second electrode. In certain example embodiments, the substrate comprises cellulose nanocrystals that can be recycled. In certain example embodiments, one or more of the first electrode, the photoactive layer, and the second electrode may be applied by a film transfer lamination method.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

The 200 watts/kilogram solar array conceptual approach study. Phase 2: Assessment report for proof-of-concept experiments and Halley's comet concentrator array

NASA Technical Reports Server (NTRS)

1977-01-01

The activities associated with the fabrication, handling, and testing of 2-mil solar cell modules on a flexible substrate are demonstrated. It is shown that 2-mil solar cells can be reliably handled, welded, and bonded to a Kapton substrate. Flexible Invar interconnects can be used to interconnect individual cells to form modules. These solar cell modules can be temperature cycled, wrapped around a 10-inch diameter drum, and vibrated to the shuttle environment with no significant damage. A bonding technique was developed to physically join adjacent modules that is stronger than the Kapton, itself. Ultraviolet radiation tests were performed on RTV - silicone as a cell cover material - with very encouraging results.

Solar cells with low cost substrates and process of making same

DOEpatents

Mitchell, Kim W.

1984-01-01

A solar cell having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron.sup.2. The intermediate recrystallized film has a grain size in the range of from about 10 microns.sup.2 to about 10,000 microns.sup.2 and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns.sup.2. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Solar cells with low cost substrates, process of making same and article of manufacture

DOEpatents

Mitchell, K.W.

A solar cell is disclosed having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron/sup 2/. The intermediate recrystallized film has a grain size in the range of from about 10 microns/sup 2/ to about 10,000 microns/sup 2/ and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns/sup 2/. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

2015-04-24

One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as anmore » absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.« less

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Thomas, Ralph D.; Brinker, David J.; Fatemi, Navid S.; Honecy, Frank S.

1991-01-01

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Single Source Precursors for Thin Film Solar Cells

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

2002-01-01

The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

Selective dissolution of halide perovskites as a step towards recycling solar cells

PubMed Central

Kim, Byeong Jo; Kim, Dong Hoe; Kwon, Seung Lee; Park, So Yeon; Li, Zhen; Zhu, Kai; Jung, Hyun Suk

2016-01-01

Most research on perovskite solar cells has focused on improving power-conversion efficiency and stability. However, if one could refurbish perovskite solar cells, their stability might not be a critical issue. From the perspective of cost effectiveness, if failed, perovskite solar cells could be collected and recycled; reuse of their gold electrodes and transparent conducting glasses could reduce the price per watt of perovskite photovoltaic modules. Herein, we present a simple and effective method for removing the perovskite layer and reusing the mesoporous TiO2-coated transparent conducting glass substrate via selective dissolution. We find that the perovskite layer can be easily decomposed in polar aprotic solvents because of the reaction between polar aprotic solvents and Pb2+ cations. After 10 cycles of recycling, a mesoporous TiO2-coated transparent conducting glass substrate-based perovskite solar cell still shows a constant power-conversion efficiency, thereby demonstrating the possibility of recycling perovskite solar cells. PMID:27211006

Antifouling property of highly oleophobic substrates for solar cell surfaces

NASA Astrophysics Data System (ADS)

Fukada, Kenta; Nishizawa, Shingo; Shiratori, Seimei

2014-03-01

Reduction of solar cell conversion efficiency by bird spoor or oil smoke is a common issue. Maintaining the surface of solar cells clean to retain the incident light is of utmost importance. In this respect, there has been growing interest in the area of superhydrophobicity for developing water repelling and self-cleaning surfaces. This effect is inspired by lotus leaves that have micro papillae covered with hydrophobic wax nanostructures. Superhydrophobic surfaces on transparent substrates have been developed for removing contaminants from solar cell surfaces. However, oil cannot be removed by superhydrophobic effect. In contrast, to prevent bird spoor, a highly oleophobic surface is required. In a previous study, we reported transparent-type fabrics comprising nanoparticles with a nano/micro hierarchical structure that ensured both oleophobicity and transparency. In the current study, we developed new highly oleophobic stripes that were constructed into semi-transparent oleophobic surfaces for solar cells. Solar cell performance was successfully maintained; the total transmittance was a key factor for determining conversion efficiency.

Recent Progress Towards Space Applications Of Thin Film Solar Cells- The German Joint Project 'Flexible CIGSE Thin Film Solar Cells For Space Flight' And OOV

NASA Astrophysics Data System (ADS)

Brunner, Sebastian; Zajac, Kai; Nadler, Michael; Seifart, Klaus; Kaufmann, Christian A.; Caballero, Raquel; Schock, Hans-Werner; Hartmann, Lars; Otte, Karten; Rahm, Andreas; Scheit, Christian; Zachmann, Hendrick; Kessler, Friedrich; Wurz, Roland; Schulke, Peter

2011-10-01

A group of partners from an academic and industrial background are developing a flexible Cu(In,Ga)Se2 (CIGSe) thin film solar cell technology on a polyimide substrate that aims to be a future alternative to current rigid solar cell technologies for space applications. In particular on missions with high radiation volumes, the superior tolerance of chalcopyrite based thin film solar cell (TFSC) technologies with respect to electron and proton radiation, when compared to the established Si- or III-V based technologies, can be advantageous. Of all thin film technologies, those based on CIGSe have the highest potential to reach attractive photovoltaic conversion efficiencies and combine these with low weight in order to realize high power densities on solar cell and generator level. The use of a flexible substrate ensures a high packing density. A working demonstrator is scheduled for flight this year.

Selective dissolution of halide perovskites as a step towards recycling solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Byeong Jo; Kim, Dong Hoe; Kwon, Seung Lee

Most research on perovskite solar cells has focused on improving power-conversion efficiency and stability. However, if one could refurbish perovskite solar cells, their stability might not be a critical issue. From the perspective of cost effectiveness, if failed, perovskite solar cells could be collected and recycled; reuse of their gold electrodes and transparent conducting glasses could reduce the price per watt of perovskite photovoltaic modules. Here, we present a simple and effective method for removing the perovskite layer and reusing the mesoporous TiO 2-coated transparent conducting glass substrate via selective dissolution. We find that the perovskite layer can be easilymore » decomposed in polar aprotic solvents because of the reaction between polar aprotic solvents and Pb 2+ cations. After 10 cycles of recycling, a mesoporous TiO 2-coated transparent conducting glass substrate-based perovskite solar cell still shows a constant power-conversion efficiency, thereby demonstrating the possibility of recycling perovskite solar cells.« less

Selective dissolution of halide perovskites as a step towards recycling solar cells

DOE PAGES

Kim, Byeong Jo; Kim, Dong Hoe; Kwon, Seung Lee; ...

2016-05-23

Most research on perovskite solar cells has focused on improving power-conversion efficiency and stability. However, if one could refurbish perovskite solar cells, their stability might not be a critical issue. From the perspective of cost effectiveness, if failed, perovskite solar cells could be collected and recycled; reuse of their gold electrodes and transparent conducting glasses could reduce the price per watt of perovskite photovoltaic modules. Here, we present a simple and effective method for removing the perovskite layer and reusing the mesoporous TiO 2-coated transparent conducting glass substrate via selective dissolution. We find that the perovskite layer can be easilymore » decomposed in polar aprotic solvents because of the reaction between polar aprotic solvents and Pb 2+ cations. After 10 cycles of recycling, a mesoporous TiO 2-coated transparent conducting glass substrate-based perovskite solar cell still shows a constant power-conversion efficiency, thereby demonstrating the possibility of recycling perovskite solar cells.« less

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Method of forming emitters for a back-contact solar cell

DOEpatents

Li, Bo; Cousins, Peter J.; Smith, David D.

2015-09-29

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Method of forming emitters for a back-contact solar cell

DOEpatents

Li, Bo; Cousins, Peter J; Smith, David D

2014-12-16

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Method or forming emitters for a back-contact solar cell

DOEpatents

Li, Bo; Cousins, Peter J.; Smith, David D.

2014-08-12

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Method of fabricating a solar cell

DOEpatents

Pass, Thomas; Rogers, Robert

2016-02-16

Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

Method of fabricating a solar cell

DOEpatents

Pass, Thomas; Rogers, Robert

2014-02-25

Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

High volume method of making low-cost, lightweight solar materials

DOEpatents

Blue, Craig A.; Clemens, Art; Duty, Chad E.; Harper, David C.; Ott, Ronald D.; Rivard, John D.; Murray, Christopher S.; Murray, Susan L.; Klein, Andre R.

2014-07-15

A thin film solar cell and a method fabricating thin film solar cells on flexible substrates. The method includes including providing a flexible polymeric substrate, depositing a photovoltaic precursor on a surface of the substrate, such as CdTe, ZrTe, CdZnTe, CdSe or Cu(In,Ga)Se.sub.2, and exposing the photovoltaic precursor to at least one 0.5 microsecond to 10 second pulse of predominately infrared light emitted from a light source having a power output of about 20,000 W/cm.sup.2 or less to thermally convert the precursor into a crystalline photovoltaic material having a photovoltaic efficiency of greater than one percent, the conversion being carried out without substantial damage to the substrate.

Chemical Vapor Deposition for Ultra-lightweight Thin-film Solar Arrays for Space

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Jin, Michael H.; Lau, Janice E.; Harris, Jerry D.; Cowen, Jonathan E.; Duraj, Stan A.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. A key technical issues outlined in the 2001 U.S. Photovoltaic Roadmap, is the need to develop low cost, high throughput manufacturing for high-efficiency thin film solar cells. At NASA GRC we have focused on the development of new single-source-precursors (SSPs) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV devices.

The next generation CdTe technology- Substrate foil based solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferekides, Chris

The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal ofmore » this project) a roll-to-toll high throughput technology could be developed.« less

Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah S.; Bailey, Sheila G.; Dickman, John E.; Raffaelle, Ryne P.; Landi, Brian J.; Anctil, Annick; DiLeo, Roberta; Jin, Michael H.-C.; Lee, Chung-Young;

Development of Low Cost, High Energy-Per-Unit-Area Solar Cell Modules

NASA Technical Reports Server (NTRS)

Jones, G. T.; Chitre, S.

1977-01-01

Work on the development of low cost, high energy per unit area solar cell modules was conducted. Hexagonal solar cell and module efficiencies, module packing ratio, and solar cell design calculations were made. The cell grid structure and interconnection pattern was designed and the module substrates were fabricated for the three modules to be used. It was demonstrated that surface macrostructures significantly improve cell power output and photovoltaic energy conversion efficiency.

Heterojunction solar cell

DOEpatents

Olson, Jerry M.

1994-01-01

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

Glass diffusion source for constraining BSF region of a solar cell

DOEpatents

Lesk, I.A.; Pryor, R.A.; Coleman, M.G.

1982-08-27

The present invention is directed to a method of fabricating a solar cell comprising simultaneous diffusion of the p and n dopant materials into the solar cell substrate. The simultaneous diffusion process is preceded by deposition of a capping layer impervious to doping by thermal diffusion processes.

Efficient recyclable organic solar cells on cellulose nanocrystal substrates with a conducting polymer top electrode deposited by film-transfer lamination

Treesearch

Yinhua Zhou; Talha M. Khan; Jen-Chieh Liu; Canek Fuentes-Hernandez; Jae Won Shim; Ehsan Najafabadi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2014-01-01

We report on efficient solar cells on recyclable cellulose nanocrystal (CNC) substrates with a new device structure wherein polyethylenimine-modified Ag is used as the bottom electron-collecting electrode and high-conductivity poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS, PH1000) is used as the semitransparent top holecollecting electrode. The...

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

DOEpatents

Weber, Michael F.

1991-10-08

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

NASA Astrophysics Data System (ADS)

Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

2015-09-01

In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The properties of the solar cells on anodized aluminum substrates were analyzed by using a solar simulator.

Dye-sensitized solar cells using laser processing techniques

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Pique, Alberto; Kushto, Gary P.; Auyeung, Raymond C. Y.; Lee, S. H.; Arnold, Craig B.; Kafafi, Zakia H.

2004-07-01

Laser processing techniques, such as laser direct-write (LDW) and laser sintering, have been used to deposit mesoporous nanocrystalline TiO2 (nc-TiO2) films for use in dye-sensitized solar cells. LDW enables the fabrication of conformal structures containing metals, ceramics, polymers and composites on rigid and flexible substrates without the use of masks or additional patterning techniques. The transferred material maintains a porous, high surface area structure that is ideally suited for dye-sensitized solar cells. In this experiment, a pulsed UV laser (355nm) is used to forward transfer a paste of commercial TiO2 nanopowder (P25) onto transparent conducting electrodes on flexible polyethyleneterephthalate (PET) and rigid glass substrates. For the cells based on flexible PET substrates, the transferred TiO2 layers were sintered using an in-situ laser to improve electron paths without damaging PET substrates. In this paper, we demonstrate the use of laser processing techniques to produce nc-TiO2 films (~10 μm thickness) on glass for use in dye-sensitized solar cells (Voc = 690 mV, Jsc = 8.7 mA/cm2, ff = 0.67, η = 4.0 % at 100 mW/cm2). This work was supported by the Office of Naval Research.

Heterojunction solar cell

DOEpatents

Olson, J.M.

1994-08-30

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Silicon on Ceramic Process: Silicon Sheet Growth and Device Development for the Large-area Silicon Sheet and Cell Development Tasks of the Low-cost Solar Array Project

NASA Technical Reports Server (NTRS)

Chapman, P. W.; Zook, J. D.; Heaps, J. D.; Pickering, C.; Grung, B. L.; Koepke, B.; Schuldt, S. B.

1979-01-01

The technical and economic feasibility of producing solar cell quality sheet silicon was investigated. It was hoped this could be done by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Work was directed towards the solution of unique cell processing/design problems encountered with the silicon-ceramic (SOC) material due to its intimate contact with the ceramic substrate. Significant progress was demonstrated in the following areas; (1) the continuous coater succeeded in producing small-area coatings exhibiting unidirectional solidification and substatial grain size; (2) dip coater succeeded in producing thick (more than 500 micron) dendritic layers at coating speeds of 0.2-0.3 cm/sec; and (3) a standard for producing total area SOC solar cells using slotted ceramic substrates was developed.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

NASA Astrophysics Data System (ADS)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Examination of the sintering process-dependent properties of TiO2 on glass and textile substrates

NASA Astrophysics Data System (ADS)

Junger, Irén Juhász; Homburg, Sarah Vanessa; Grethe, Thomas; Herrmann, Andreas; Fiedler, Johannes; Schwarz-Pfeiffer, Anne; Blachowicz, Tomasz; Ehrmann, Andrea

2017-01-01

In recent years, the development of smart textiles has attracted great attention. Such textiles can contain small electrical devices, which need a power supply. Dye-sensitized solar cells, which can be produced from nontoxic, cheap, low-purity materials, could fill this purpose. However, to reach reasonable cell properties, sintering the TiO2 layer on the substrate is necessary. Unfortunately, only a few textile materials can withstand a sintering process at high temperatures. Therefore, it is important to find an optimal temperature leading to a reasonable improvement of the cell characteristics without damaging the textile substrate. The influence of the sintering temperature on different properties is investigated. For this, the surface properties of the TiO2 coating, such as adhesion to the substrate, dye adsorption characteristic, and film stability, are investigated on different substrates, i.e., a glass plate, a stainless steel nonwoven fabric, and a carbon woven fabric. Two commercially available TiO2 sources are used: a TiO2 dispersion obtained from Man Solar and a water-based solution of TiO2 particles purchased from Kronos. The influence of the sintering temperature on short-circuit current and open-circuit voltage of solar cells on the aforementioned substrates is also examined.

Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

NASA Technical Reports Server (NTRS)

Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

2005-01-01

The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

2018-05-01

High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

Substrate for thin silicon solar cells

DOEpatents

Ciszek, Theodore F.

1995-01-01

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Carbon Nanotube Patterning on a Metal Substrate

NASA Technical Reports Server (NTRS)

Nguyen, Cattien V. (Inventor)

2016-01-01

A CNT electron source, a method of manufacturing a CNT electron source, and a solar cell utilizing a CNT patterned sculptured substrate are disclosed. Embodiments utilize a metal substrate which enables CNTs to be grown directly from the substrate. An inhibitor may be applied to the metal substrate to inhibit growth of CNTs from the metal substrate. The inhibitor may be precisely applied to the metal substrate in any pattern, thereby enabling the positioning of the CNT groupings to be more precisely controlled. The surface roughness of the metal substrate may be varied to control the density of the CNTs within each CNT grouping. Further, an absorber layer and an acceptor layer may be applied to the CNT electron source to form a solar cell, where a voltage potential may be generated between the acceptor layer and the metal substrate in response to sunlight exposure.

Integrated Phase Array Antenna/Solar Cell System for Flexible Access Communication (IA/SAC)

NASA Technical Reports Server (NTRS)

Clark, E. B.; Lee, R. Q.; Pal, A. T.; Wilt, D. M.; McElroy, B. D.; Mueller, C. H.

2005-01-01

This paper describes recent efforts to integrate advanced solar cells with printed planar antennas. Several previous attempts have been reported in the literature, but this effort is unique in several ways. It uses Gallium Arsenide (GaAs) multi-junction solar cell technology. The solar cells and antennas will be integrated onto a common GaAs substrate. When fully implemented, IA/SAC will be capable of dynamic beam steering. In addition, this program targets the X-band (8 - 12 GHz) and higher frequencies, as compared to the 2.2 - 2.9 GHz arrays targeted by other organizations. These higher operating frequencies enable a greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of 2 x 2 cm GaAs Monolithically Integrated Modules (MIM) with integrated patch antennas on the opposite side of the substrate. Subsequent work will involve the design and development of devices having the GaAs MIMs and the antennas on the same side of the substrate. Results from the phase one efforts will be presented.

High-Performance Ultrathin Organic-Inorganic Hybrid Silicon Solar Cells via Solution-Processed Interface Modification.

PubMed

Zhang, Jie; Zhang, Yinan; Song, Tao; Shen, Xinlei; Yu, Xuegong; Lee, Shuit-Tong; Sun, Baoquan; Jia, Baohua

2017-07-05

Organic-inorganic hybrid solar cells based on n-type crystalline silicon and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) exhibited promising efficiency along with a low-cost fabrication process. In this work, ultrathin flexible silicon substrates, with a thickness as low as tens of micrometers, were employed to fabricate hybrid solar cells to reduce the use of silicon materials. To improve the light-trapping ability, nanostructures were built on the thin silicon substrates by a metal-assisted chemical etching method (MACE). However, nanostructured silicon resulted in a large amount of surface-defect states, causing detrimental charge recombination. Here, the surface was smoothed by solution-processed chemical treatment to reduce the surface/volume ratio of nanostructured silicon. Surface-charge recombination was dramatically suppressed after surface modification with a chemical, associated with improved minority charge-carrier lifetime. As a result, a power conversion efficiency of 9.1% was achieved in the flexible hybrid silicon solar cells, with a substrate thickness as low as ∼14 μm, indicating that interface engineering was essential to improve the hybrid junction quality and photovoltaic characteristics of the hybrid devices.

Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

PubMed

Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

2014-05-05

The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices.

PubMed

Eslamian, Morteza; Zabihi, Fatemeh

2015-12-01

A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic "substrate vibration-assisted drop casting" (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few similar reports by others, confirm that imposing ultrasonic vibration on the substrate can simply convert the uncontrollable drop casting method into a controllable coating technique. Therefore, the SVADC may be used to fabricate an array of emerging thin-film solar cells, such as polymer, perovskite, and quantum-dot solar cells, as well as other small thin-film devices, in a roll-to-roll and automated fabrication process. The preliminary results demonstrate a ten-fold increase in electrical conductivity of PSS made by SVADC compared with the film made by conventional drop casting. Also, simple planar perovskite solar cells made here using SVADC show promising performance with an efficiency of over 3 % for a simple structure without performing process optimization or using expensive materials and treatments.

Edge coating apparatus with movable roller applicator for solar cell substrates

DOEpatents

Pavani, Luca; Abas, Emmanuel

2012-12-04

A non-contact edge coating apparatus includes an applicator for applying a coating material on an edge of a solar cell substrate and a control system configured to drive the applicator. The control system may drive the applicator along an axis to maintain a distance with an edge of the substrate as the substrate is rotated to have the edge coated with a coating material. The applicator may include a recessed portion into which the edge of the substrate is received for edge coating. For example, the applicator may be a roller with a groove. Coating material may be introduced into the groove for application onto the edge of the substrate. A variety of coating materials may be employed with the apparatus including hot melt ink and UV curable plating resist.

Advanced Solar Panel Designs

NASA Technical Reports Server (NTRS)

Ralph, E. L.; Linder, E. B.

1995-01-01

Solar panel designs that utilize new high-efficiency solar cells and lightweight rigid panel technologies are described. The resulting designs increase the specific power (W/kg) achievable in the near-term and are well suited to meet the demands of higher performance small satellites (smallsats). Advanced solar panel designs have been developed and demonstrated on two NASA SBIR contracts at Applied Solar. The first used 19% efficient, large area (5.5 cm x 6.5 cm) GaAs/Ge solar cells with a lightweight rigid graphite epoxy isogrid substrate configuration. A 1,445 sq cm coupon was fabricated and tested to demonstrate 60 W/kg with a high potential of achieving 80 W/kg. The second panel design used new 22% efficiency, dual-junction GaInP2/GaAs/Ge solar cells combined with a lightweight aluminum core/graphite fiber mesh facesheet substrate. A 1,445 sq cm coupon was fabricated and tested to demonstrate 105 W/kg with the potential of achieving 115 W/kg.

Toward a III-V Multijunction Space Cell Technology on Si

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

2007-01-01

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells

NASA Astrophysics Data System (ADS)

Hossain, Jaker; Ohki, Tatsuya; Ichikawa, Koki; Fujiyama, Kazuhiko; Ueno, Keiji; Fujii, Yasuhiko; Hanajiri, Tatsuro; Shirai, Hajime

2016-03-01

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated in terms of cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature Ts, and substrate dc bias Vs as variables for efficient PEDOT:PSS/crystalline silicon (c-Si) heterojunction solar cells. The high-speed-camera and differential mobility analysis characterizations revealed that the average size and flux of PEDOT:PSS mist depend on f, type of solvent, and Vs. Film deposition occurred when positive Vs was applied to the c-Si substrate at Ts of 30-40 °C, whereas no deposition of films occurred with negative Vs, implying that the film is deposited mainly from negatively charged mist. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrates by adjusting Ts and Vs. The adhesion of CMD PEDOT:PSS film to c-Si was greatly enhanced by applying substrate dc bias Vs compared with that of spin-coated film. The CMD PEDOT:PSS/c-Si heterojunction solar cell devices on textured c-Si(100) in 2 × 2 cm2 exhibited a power conversion efficiency η of 11.0% with better uniformity of the solar cell parameters. Furthermore, η was increased to 12.5% by adding an AR coating layer of molybdenum oxide MoOx formed by CMD. These findings suggest that CMD with negatively charged mist has great potential for the uniform deposition of organic and inorganic materials on textured c-Si substrates by suitably adjusting Ts and Vs.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates.

PubMed

Imajo, T; Toko, K; Takabe, R; Saitoh, N; Yoshizawa, N; Suemasu, T

2018-01-16

Semiconductor strontium digermanide (SrGe 2 ) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe 2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe 2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe 2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe 2 to high-efficiency thin-film solar cells.

Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

NASA Astrophysics Data System (ADS)

Wang, Shu-Yi

To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance absorption at the emission peak of the dye. A factorial increase in the output power density of coupled PV as compared to PV exposed directly to solar spectrum is observed for high light concentration on the edge. These initial results motivated a more in-depth study of coupled LSC-PV system, which took into account the radiative transport inside the realistic LSC. These investigations were carried out on LSCs using Lumogen Red305 and Rhodamine 6G dyes coupled to pristine and plasmonic ultra-thin film silicon solar cells. Prediction based on detailed balance shows that the coupled LSC-plasmonic solar cell can generate 63.7 mW/cm2 with a photocurrent density of 71.3 mA/cm2 which is higher than that of cSi solar cells available on current market. The second part of the thesis focuses on PV absorption enhancement techniques. First, the effect of vertical positioning of plasmonic nanostructures on absorption enhancement was theoretically investigated to understand which one of the three mechanisms usually responsible for the enhancement (forward scattering, diffraction and localized surface plamson) plays the dominant role. Simulation results suggested that the maximum enhancement occurred when placing the nanostructures in the rear side of the cell because of longer path length due to scattering. The experimental effort then switched focus on substrate patterning, which is a less expensive alternative to plasmonic absorption enhancement. Specifically, a nanostructured substrate was prepared by a simple electrochemical process based on two-step aluminum anodization technique. The absorption of thin film silicon deposited on these substrates showed a broadband enhancement. The overall photocurrent density was up to 40% higher than that of films deposited on flat substrates. In conclusion, the studies carried out in this thesis indicate that spectral coupling of LSCs to thin film solar cells could lead to significant improvements in PV output power density. Moreover, while the absorption of thin film solar cells can be enhanced by plasmonic nanostructures, it is shown that alternative methods, such as direct deposition of the films on inexpensively nanostructured substrates could also be employed to obtain significant enhancements. Combining these strategies may lead to inexpensive solar power harvesting systems with significant economic benefits. These strategies are not material-specific but applicable to a wide range of thin film solar cells.

Substrate for thin silicon solar cells

DOEpatents

Ciszek, T.F.

1995-03-28

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Turning the Moon into a Solar Photovoltaic Paradise

NASA Technical Reports Server (NTRS)

Freundlich, Alex; Alemu, Andenet; Williams, Lawrence; Nakamura, Takashi; Sibille, Laurent; Curren, Peter

2006-01-01

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and insulators), and preliminary attempts in the fabrication of thin film (silicon/II-VI) photovoltaic materials on lunar regolith glass substrates. A conceptual design for a solar powered robotic rover capable of fabricating solar cells directly on the lunar surface is provided. Technical challenges in the development of such a facility and strategies to alleviate perceived difficulties are discussed.

Improvement of organic solar cells by flexible substrate and ITO surface treatments

NASA Astrophysics Data System (ADS)

Cheng, Yuang-Tung; Ho, Jyh-Jier; Wang, Chien-Kun; Lee, William; Lu, Chih-Chiang; Yau, Bao-Shun; Nain, Jhen-Liang; Chang, Shun-Hsyung; Chang, Chiu-Cheng; Wang, Kang L.

2010-10-01

In this paper, surface treatments on polyethylene terephthalate with polymeric hard coating (PET-HC) substrates are described. The effect of the contact angle on the treatment is first investigated. It has been observed that detergent is quite effective in removing organic contamination on the flexible PET-HC substrates. Next, using a DC-reactive magnetron sputter, indium tin oxide (ITO) thin films of 90 nm are grown on a substrate treated by detergent. Then, various ITO surface treatments are made for improving the performance of the finally developed organic solar cells with structure Al/P3HT:PCBM/PEDOT:PSS/ITO/PET. It is found that the parameters of the ITO including resistivity, carrier concentration, transmittance, surface morphology, and work function depended on the surface treatments and significantly influence the solar cell performance. With the optimal conditions for detergent treatment on flexible PET substrates, the ITO film with a resistivity of 5.6 × 10 -4 Ω cm and average optical transmittance of 84.1% in the visible region are obtained. The optimal ITO surface treated by detergent for 5 min and then by UV ozone for 20 min exhibits the best WF value of 5.22 eV. This improves about 8.30% in the WF compared with that of the untreated ITO film. In the case of optimal treatment with the organic photovoltaic device, meanwhile, 36.6% enhancement in short circuit current density ( Jsc) and 92.7% enhancement in conversion efficiency ( η) over the untreated solar cell are obtained.

Increased efficiency with surface texturing in ITO/InP solar cells

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Landis, Geoffrey A.; Fatemi, Navid; Li, Xiaonan; Scheiman, David; Bailey, Sheila

1992-01-01

Optimization of an InP solar cell with a V-grooved surface is discussed. Total internal reflection in the coverglass reduces surface reflection and can recover light reflected from the front metallization. Results from the first ITO/InP solar cells on low-angle V-grooved substrates are presented, showing a 5.8 percent increase in current.

Dye-sensitized solar cells with vertically aligned TiO2 nanowire arrays grown on carbon fibers.

PubMed

Cai, Xin; Wu, Hongwei; Hou, Shaocong; Peng, Ming; Yu, Xiao; Zou, Dechun

2014-02-01

One-dimensional semiconductor TiO2 nanowires (TNWs) have received widespread attention from solar cell and related optoelectronics scientists. The controllable synthesis of ordered TNW arrays on arbitrary substrates would benefit both fundamental research and practical applications. Herein, vertically aligned TNW arrays in situ grown on carbon fiber (CF) substrates through a facile, controllable, and seed-assisted thermal process is presented. Also, hierarchical TiO2 -nanoparticle/TNW arrays were prepared that favor both the dye loading and depressed charge recombination of the CF/TNW photoanode. An impressive conversion efficiency of 2.48 % (under air mass 1.5 global illumination) and an apparent efficiency of 4.18 % (with a diffuse board) due to the 3D light harvesting of the wire solar cell were achieved. Moreover, efficient and inexpensive wire solar cells made from all-CF electrodes and completely flexible CF-based wire solar cells were demonstrated, taking into account actual application requirements. This work may provide an intriguing avenue for the pursuit of lightweight, cost-effective, and high-performance flexible/wearable solar cells. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Vernon, S. M.

1982-01-01

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.

Solution-Processed Small-Molecule Bulk Heterojunctions: Leakage Currents and the Dewetting Issue for Inverted Solar Cells.

PubMed

Destouesse, Elodie; Chambon, Sylvain; Courtel, Stéphanie; Hirsch, Lionel; Wantz, Guillaume

2015-11-11

In organic photovoltaic (PV) devices based on solution-processed small molecules, we report here that the physicochemical properties of the substrate are critical for achieving high-performances organic solar cells. Three different substrates were tested: ITO coated with PSS, ZnO sol-gel, and ZnO nanoparticles. PV performances are found to be low when the ZnO nanoparticles layer is used. This performance loss is attributed to the formation of many dewetting points in the active layer, because of a relatively high roughness of the ZnO nanoparticles layer, compared to the other layers. We successfully circumvented this phenomenon by adding a small quantity of polystyrene (PS) in the active layer. The introduction of PS improves the quality of film forming and reduces the dark currents of solar cells. Using this method, high-efficiency devices were achieved, even in the case of substrates with higher roughness.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1994-01-01

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, J.M.; Kurtz, S.R.

1994-05-31

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

All-inorganic large-area low-cost and durable flexible perovskite solar cells using copper foil as a substrate.

PubMed

Abdollahi Nejand, B; Nazari, P; Gharibzadeh, S; Ahmadi, V; Moshaii, A

2017-01-05

Here, a low-cost perovskite solar cell using CuI and ZnO as the respective inorganic hole and electron transport layers is introduced. Copper foil is chosen as a cheap and low-weight conductive substrate which has a similar work function to ITO. Besides, copper foil is an interesting copper atom source for the growth of the upper cuprous iodide layer on copper foil. A spray coating of a transparent silver nanowire electrode is used as a top contact. The prepared device shows a maximum power conversion efficiency of 12.80% and long-term durability providing an environmentally and market friendly perovskite solar cell.

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

DOEpatents

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

DOEpatents

Kaschmitter, James L.; Sigmon, Thomas W.

1995-01-01

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Newer approach of using alternatives to (Indium doped) metal electrodes, dyes and electrolytes in dye sensitized solar cell

NASA Astrophysics Data System (ADS)

Patni, Neha; Sharma, Pranjal; Pillai, Shibu G.

2018-04-01

This work demonstrates the PV study of dye sensitised solar cells by fabricating the (PV) cell using the ITO, FTO and AZO glass substrate. Dyes used for the fabrication were extracted from beetroot and spinach and a cocktail dye by mixing both of the dyes was also prepared. Similarly the three dufferent electrolytes used were iodide-triiodide couple, polyaniline and mixture of polyaniline and iodide couple. Mixed dye and mixed electrolyte has emerged as the highest efficient cell. The electrical characterisation shows that the highest power conversion efficiency of 1.86% was achieved by FTO substrate, followed by efficiency of 1.83% by AZO substrate and efficiency of 1.63% with ITO substrate using mixed dye and mixed electrolyte approach. This justifies that FTO and AZO shows better efficiency and hence proposed to be used as an alternative to indium free system.

Self-organized broadband light trapping in thin film amorphous silicon solar cells.

PubMed

Martella, C; Chiappe, D; Delli Veneri, P; Mercaldo, L V; Usatii, I; Buatier de Mongeot, F

2013-06-07

Nanostructured glass substrates endowed with high aspect ratio one-dimensional corrugations are prepared by defocused ion beam erosion through a self-organized gold (Au) stencil mask. The shielding action of the stencil mask is amplified by co-deposition of gold atoms during ion bombardment. The resulting glass nanostructures enable broadband anti-reflection functionality and at the same time ensure a high efficiency for diffuse light scattering (Haze). It is demonstrated that the patterned glass substrates exhibit a better photon harvesting than the flat glass substrate in p-i-n type thin film a-Si:H solar cells.

Progress in developing ultrathin solar cell blanket technology

NASA Technical Reports Server (NTRS)

Patterson, R. E.; Mesch, H. G.; Scott-Monck, J.

1984-01-01

A program was conducted to develop technologies for welding interconnects to three types of 50-micron-thick, 2 by 2-cm solar cells. Parallel-gap resistance welding was used for interconnect attachment. Weld schedules were independently developed for each of the three cell types and were coincidentally identical. Six 48-cell modules were assembled with 50-micron (nominal) thick cells, frosted fused-silica covers, silver-plated Invar interconnectors, and four different substrate designs. Three modules (one for each cell type) have single-layer Kapton (50-micron-thick) substrates. The other three modules each have a different substrate (Kapton-Kevlar-Kapton, Kapton-graphite-Kapton, and Kapton-graphite-aluminum honeycomb-graphite). All six modules were subjected to 4112 thermal cycles from -175 to 65 C (corresponding to over 40 years of simulated geosynchronous orbit thermal cycling) and experienced only negligible electrical degradation (1.1 percent average of six 48-cell modules).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaoyu; Graduate University of Chinese Academy of Sciences, Beijing 100049; He, Junhui, E-mail: jhhe@mail.ipc.ac.cn

Graphical abstract: High performance broadband antireflective and water-repellent coatings were fabricated on glass substrates, which can improve the short-circuit current of solar cells as much as 6.6% in comparison with glass substrates without the coatings. - Highlights: • Broadband anti-reflective and water-repellent coatings were fabricated. • Transmittance increased to 99.0%, significantly higher than that of commercial solar glasses. • The performance of standard solar cells with the AR coating was enhanced as much as 6.6%. - Abstract: High performance broadband antireflective (AR) and water-repellent coatings were fabricated on glass substrates by assembly of silica nanoparticles and polyelectrolytes via the layer-by-layermore » (LbL) assembly technique, followed by calcination and hydrophobic modification. A porous poly(diallyladimethylammonium chloride) (PDDA)/20 nm SiO{sub 2} nanoparticles (S-20) multilayer coating with AR property was prepared first. The maximum transmittance is as high as 99.0%, while that of the glass substrate is only 91.3%. After calcination and hydrophobic modification, the coating became water-repellent while maintaining the good AR property. Such water-repellent AR coatings can improve the short-circuit current of solar cells as much as 6.6% in comparison with glass substrates without the coatings. Scanning electron microscopy (SEM) was used to observe the morphology and thickness of coatings. Transmission spectra and reflection spectra were characterized by UV–vis spectrophotometer. The surface wettability was studied by a contact angle/interface system.« less

Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

DTIC Science & Technology

2012-08-01

substrate cells. 3   GaAs CIGS CdTe α-SI Organic Trip. jun. Metam. C-Si Trip. Jun. Ge sub InP Power/Weight  Tradeoff...40   -  AR  coa<ng  ( ZnS /MgF2)150nm...AR  coa<ng  ( ZnS /MgF2)150nm                                      $5   -  HF

Fabrication & characterization of thin film Perovskite solar cells under ambient conditions

NASA Astrophysics Data System (ADS)

Shah, Vivek T.

High efficiency solar cells based on inorganic materials such as silicon have been commercialized and used to harness energy from the sun and convert it into electrical energy. However, they are energy-intensive and rigid. Thin film solar cells based on inorganic-organic hybrid lead halide perovskite compounds have the potential to be a disruptive technology in the field of renewable energy sector of the economy. Perovskite solar cell (PSC) technology is a viable candidate for low-cost large scale production as it is solution processable at low temperature on a flexible substrate. However, for commercialization, PSCs need to compete with the cost and efficiency of crystalline silicon solar cells. High efficiency PSCs have been fabricated under highly controlled conditions in what is known as a glove-box, which adds to the cost of fabrication of PSCs. This additional cost can be significantly reduced by eliminating the use of glove-box for fabrication. Therefore, in this work, thin film PSCs were fabricated at ambient conditions on glass substrates. A power conversion efficiency of 5.6% was achieved with optimum fabrication control and minimal exposure to moisture.

Monolithic tandem solar cell

DOEpatents

Wanlass, M.W.

1994-06-21

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

Monolithic tandem solar cell

DOEpatents

Wanlass, Mark W.

1994-01-01

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1

NASA Technical Reports Server (NTRS)

Hovel, H. J.; Woodall, J. M.

1976-01-01

The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn doped pGaAs region, and a Zn doped Ga(1-x)Al(x)As layer, (2) one consisting of an nGaAs substrate, a Ge doped pGaAs region, and a pGa(1-x)Al(x)As upper layer, and (3) one consisting of an n+GaAs substrate, an nGa(1-x)Al(X)As region, a pGa(1-x)Bl(X) As region, and a pGa(1-y)Al(y)As upper layer. In all three cases, the upper alloy layer is thin and of high Al composition in order to obtain high spectral response over the widest possible range of photon energies. Spectral response, capacitance-voltage, current-voltage, diffusion length, sunlight (or the equivalent)-efficiency, and efficiency-temperature measurements were made as a function of device parameters in order to analyze and optimize the solar cell behavior.

High efficient perovskite solar cell material CH3NH3PbI3: Synthesis of films and their characterization

NASA Astrophysics Data System (ADS)

Bera, Amrita Mandal; Wargulski, Dan Ralf; Unold, Thomas

2018-04-01

Hybrid organometal perovskites have been emerged as promising solar cell material and have exhibited solar cell efficiency more than 20%. Thin films of Methylammonium lead iodide CH3NH3PbI3 perovskite materials have been synthesized by two different (one step and two steps) methods and their morphological properties have been studied by scanning electron microscopy and optical microscope imaging. The morphology of the perovskite layer is one of the most important parameters which affect solar cell efficiency. The morphology of the films revealed that two steps method provides better surface coverage than the one step method. However, the grain sizes were smaller in case of two steps method. The films prepared by two steps methods on different substrates revealed that the grain size also depend on the substrate where an increase of the grain size was found from glass substrate to FTO with TiO2 blocking layer to FTO without any change in the surface coverage area. Present study reveals that an improved quality of films can be obtained by two steps method by an optimization of synthesis processes.

Comparative study on deposition of fluorine-doped tin dioxide thin films by conventional and ultrasonic spray pyrolysis methods for dye-sensitized solar modules

NASA Astrophysics Data System (ADS)

Icli, Kerem Cagatay; Kocaoglu, Bahadir Can; Ozenbas, Macit

2018-01-01

Fluorine-doped tin dioxide (FTO) thin films were produced via conventional spray pyrolysis and ultrasonic spray pyrolysis (USP) methods using alcohol-based solutions. The prepared films were compared in terms of crystal structure, morphology, surface roughness, visible light transmittance, and electronic properties. Upon investigation of the grain structures and morphologies, the films prepared using ultrasonic spray method provided relatively larger grains and due to this condition, carrier mobilities of these films exhibited slightly higher values. Dye-sensitized solar cells and 10×10 cm modules were prepared using commercially available and USP-deposited FTO/glass substrates, and solar performances were compared. It is observed that there exists no remarkable efficiency difference for both cells and modules, where module efficiency of the USP-deposited FTO glass substrates is 3.06% compared to commercial substrate giving 2.85% under identical conditions. We demonstrated that USP deposition is a low cost and versatile method of depositing commercial quality FTO thin films on large substrates employed in large area dye-sensitized solar modules or other thin film technologies.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

Review on Metallic and Plastic Flexible Dye Sensitized Solar Cell

NASA Astrophysics Data System (ADS)

Yugis, A. R.; Mansa, R. F.; Sipaut, C. S.

2015-04-01

Dye sensitized solar cells (DSSCs) are a promising alternative for the development of a new generation of photovoltaic devices. DSSCs have promoted intense research due to their low cost and eco-friendly advantage over conventional silicon-based crystalline solar cells. In recent years, lightweight flexible types of DSSCs have attracted much intention because of drastic reduction in production cost and more extensive application. The substrate that used as electrode of the DSSCs has a dominant impact on the methods and materials that can be applied to the cell and consequently on the resulting performance of DSSCs. Furthermore, the substrates influence significantly the stability of the device. Although the power conversion efficiency still low compared to traditional glass based DSSCs, flexible DSSCs still have potential to be the most efficient and easily implemented technology.

Novel Passivating/Antireflective Coatings for Space Solar Cells

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Bailey, S. G.; Flood, D. J.; Faur, H. M.; Mateescu, C. G.; Alterovitz, S. A.; Scheiman, D.; Jenkins, P. P.; Brinker, D. J.

2005-01-01

We are developing a novel process to grow passivating/antireflective (AR) coatings for terrestrial and space solar cells. Our approach involves a Room Temperature Wet Chemical Growth (RTWCG) process, which was pioneered, and is under development at SPECMAT, Inc., under a Reimbursable Space Act Agreement with NASA Glenn Research Center. The RTWCG passivating/AR coatings with graded index of refraction are applied in one easy step on finished (bare) cells. The RTWCG coatings grown on planar, textured and porous Si, as well as on poly-Si, CuInSe2, and III-V substrates, show excellent uniformity irrespective of surface topography, crystal orientation, size and shape. In this paper we present some preliminary results of the RTWCG coatings on Si and III-V substrates that show very good potential for use as a passivation/AR coating for space solar cell applications. Compared to coatings grown using conventional techniques, the RTWCG coatings have the potential to reduce reflection losses and improve current collection near the illuminated surface of space solar cells, while reducing the fabrication costs.

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Solar cell with doped groove regions separated by ridges

DOEpatents

Molesa, Steven Edward; Pass, Thomas; Kraft, Steve

2017-01-31

Solar cells with doped groove regions separated by ridges and methods of fabricating solar cells are described. In an example, a solar cell includes a substrate having a surface with a plurality of grooves and ridges. A first doped region of a first conductivity type is disposed in a first of the grooves. A second doped region of a second conductivity type, opposite the first conductivity type, is disposed in a second of the grooves. The first and second grooves are separated by one of the ridges.

Analysis of space environment damage to solar cell assemblies from LDEF experiment A0171-GSFC test plate

NASA Technical Reports Server (NTRS)

Hill, David C.; Rose, M. Frank

1994-01-01

The results of the postflight analysis of the solar cell assemblies from the LDEF (Long Duration Exposure facility) experiment A0171 is provided in this NASA sponsored research project. The following data on this research are provided as follows: (1) solar cell description, including, substrate composition and thickness, crystal orientation, anti-reflective coating composition and thickness; (2) preflight characteristics of the solar cell assemblies with respect to current and voltage; and (3) post-flight characteristics of the solar cell assemblies with respect to voltage and current. These solar cell assemblies are part of the Goddard Space Flight Center test plate which was designed to test the space environment effects (radiation, atomic oxygen, thermal cycling, meteoroid and debris) on conductively coated solar cell coversheets, various electrical bond materials, solar cell performance, and other material properties where feasible.

Deposition of InP on Si Substrates for Monolithic Integration of Advanced Electronics

DTIC Science & Technology

1988-05-01

radiation resistance of InP has been demonstrated (in terms of solar cell experiments) to be quite superior to that of either GaAs or Si.( 1 , 2) In fact... photovoltaic p/n junction devices irradiated by I MeV electrons have been shown to almost totallv recover their electrical performance by annealing at...in the literature.(l5 2 2) The NTT group has succeeded in growing InP films directly on Si substrates and in fabricating solar cells (approximately 3

Group I-III-VI.sub.2 semiconductor films for solar cell application

DOEpatents

Basol, Bulent M.; Kapur, Vijay K.

1991-01-01

This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

DOEpatents

Yang, Liyou; Chen, Liangfan

1998-03-24

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Flexible Dye-Sensitized Solar Cell Based on Vertical ZnO Nanowire Arrays

PubMed Central

2011-01-01

Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices. PMID:27502660

Solar Cell Fabrication Studies Pertinent to Developing Countries.

NASA Astrophysics Data System (ADS)

Prah, Joseph Henry

That there is a need in the world today, and in the Third World in particular, for developing renewable energy sources is a proposition without question. Toward that end, the harnessing of solar energy has attracted much attention recently. In this thesis, we have addressed the question of Photovoltaics among the many approaches to the problem as being of poignant relevance in the Third World. Based on our studies, which involved the physics of solar cells, various solar cell configurations, the materials for their fabrication and their fabrication sequences, we arrived at the conclusion that silicon homojunction solar cells are best suited to the present needs and environment of, and suitable for development in the Third World, though Cadmium Sulphide-Cuprous Sulphide solar cell could be considered as a viable future candidate. Attendant with the adoption of photovoltaics as electric energy supply, is the problem of technology transfer and development. Towards that goal, we carried out in the laboratory, the fabrication of solar cells using very simple fabrication sequences and materials to demonstrate that tolerable efficiencies are achievable by their use. The view is also presented that for a thriving and viable solar cell industry in the Third World, the sine qua non is an integrated national policies involving all facets of solar cell manufacture and application, namely, material processing and fabrication, basic research, and development and socio -economic acceptance of solar cell appliances. To demonstrate how basic research could benefit solar cell fabrication, we undertook a number of experiments, such as varying our fabrication sequences and materials, finding their radiation tolerance, and carrying out Deep Level Transient Spectroscopy (DLTS) studies, in an attempt to understand some of the fabrication and environmental factors which limit solar cell performance. We thus found that subjecting wafers to preheat treatments does not improve solar cell performance, but rather reduces solar cell radiation tolerance. Also P-type substrate solar cells were found to be more radiation resistant than N-type substrate solar cells. The Deep Level Transient Spectroscopy results showed that carbon and oxygen, as one would expect, are chief contaminants of the silicon wafers that we used in the fabrication of our solar cells. . . . (Author's abstract exceeds stipulated maximum length. Discontinued here with permission of author.) UMI.

Increased voltage photovoltaic cell

NASA Technical Reports Server (NTRS)

Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

1985-01-01

A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications.

PubMed

Tsai, Chin-Yi; Lai, Jyong-Di; Feng, Shih-Wei; Huang, Chien-Jung; Chen, Chien-Hsun; Yang, Fann-Wei; Wang, Hsiang-Chen; Tu, Li-Wei

2017-01-01

In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10-50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

Some practical considerations for economical back contact formation on high efficiency solar cells

NASA Technical Reports Server (NTRS)

Lesk, I. A.

1985-01-01

The back contact can detract from solar cell performance in a number of ways: high recombination, barrier, photovoltaic, minority carrier collection, resistance. These effects may act in a nonuniform fashion over the cell area, and complicate the analysis of photovoltaic performance aimed at a better understanding of the effects of device geometry and material and/or processing parameters. The back contact is tested by reproducing it on both sides of a substrate. The objective is to find a back contact which performs well as a back contact, can be applied cheaply to large area solar cells, fits well into a practical process sequence, does not introduce structural damage or undesirable impurities into the silicon substrate, is compatible with an effective front contact technology, permits low temperature solder contacting, adheres well to silicon, and is reliable.

Enhancement of photocurrent in epitaxial lift-off thin-film GaInNAsSb solar cells due to light-confinement structure

NASA Astrophysics Data System (ADS)

Miyashita, Naoya; Behaghel, Benoît; Guillemoles, Jean-François; Okada, Yoshitaka

2018-07-01

This work focuses on the characterization of GaInNAsSb solar cells whose substrates are removed via the epitaxial lift-off (ELO) technique. As a result of the substrate removal, increases in the photocurrent and the interference feature were clearly observed. This is clear evidence of the light-confinement effect, whereby some of the unabsorbed photons at the rear metal contact were reflected back towards the front side of the ELO thin-film cell. We successfully demonstrated that the ELO technique can be applied for the GaInNAsSb cell, and the light management should add flexibility in designing the cell structures.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

NASA Astrophysics Data System (ADS)

Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

2005-07-01

Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

NASA Technical Reports Server (NTRS)

Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

1994-01-01

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Analytical determination of critical crack size in solar cells

NASA Technical Reports Server (NTRS)

Chen, C. P.

1988-01-01

Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film on a Ge substrate, using appropriate input data.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Improved High-Energy Response of AlGaAs/GaAs Solar Cells Using a Low-Cost Technology

NASA Astrophysics Data System (ADS)

Noorzad, Camron D.; Zhao, Xin; Harotoonian, Vache; Woodall, Jerry M.

2016-12-01

We report on an AlGaAs/GaAs solar cell with a significantly increased high-energy response that was produced via a modified liquid phase epitaxy (LPE) technique. This technique uses a one-step process in which the solid-liquid equilibrium Al-Ga-As:Zn melt in contact with an n-type vendor GaAs substrate simultaneously getters impurities in the substrate that shorten minority carrier lifetimes, diffuses Zn into the substrate to create a p- n junction, and forms a thin p-AlGaAs window layer that enables more high-energy light to be efficiently absorbed. Unlike conventional LPE, this process is performed isothermally. In our "double Al" method, the ratio of Al in the melt ("Al melt ratio") that was used in our process was two times more than what was previously reported in the record 1977 International Business Machines (IBM) solar cell. Photoluminescence (PL) results showed our double Al sample yielded a response to 405 nm light ("blue light"), which was more than twice as intense as the response from our replicated IBM cell. The original 1977 cell had a low-intensity spectral response to photon wavelengths under 443 nm (Woodall and Hovel in Sol Energy Mater Sol Cells 29:176, 1990). Secondary ion mass spectrometry results confirmed the increased blue light response was due to a large reduction in AlGaAs window layer thickness. These results proved increasing the Al melt ratio broadens the spectrum of light that can be transmitted through the window layer into the active GaAs region for absorption, increasing the overall solar cell efficiency. Our enhanced double Al method can pave the way for large-scale manufacturing of low-cost, high-efficiency solar cells.

Low cost silicon-on-ceramic photovoltaic solar cells

NASA Technical Reports Server (NTRS)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Light scattering properties of self-organized nanostructured substrates for thin-film solar cells.

PubMed

Mennucci, C; Del Sorbo, S; Pirotta, S; Galli, M; Andreani, L C; Martella, C; Giordano, M C; Buatier de Mongeot, F

2018-06-01

We investigate the scattering properties of novel kinds of nano-textured substrates, fabricated in a self-organized fashion by defocused ion beam sputtering. These substrates provide strong and broadband scattering of light and can be useful for applications in thin-film solar cells. In particular, we characterize the transmitted light in terms of haze and angle-resolved scattering, and we compare our results with those obtained for the commonly employed Asahi-U texture. The results indicate that the novel substrate has better scattering properties compared to reference Asahi-U substrates. We observe super-Lambertian light scattering behavior in selected spectral and angular regions due to the peculiar morphology of the nano-textured interface, which combines high aspect ratio pseudo random structures with a one-dimensional periodic pattern. The enhancement of light absorption observed in a prototype thin film semiconductor absorber grown on nano-textured glass with respect to an Asahi-U substrate further confirms the superior light trapping properties of the novel substrate.

Solar cell array design handbook, volume 1

NASA Technical Reports Server (NTRS)

Rauschenbach, H. S.

1976-01-01

Twelve chapters discuss the following: historical developments, the environment and its effects, solar cells, solar cell filters and covers, solar cell and other electrical interconnections, blocking and shunt diodes, substrates and deployment mechanisms, material properties, design synthesis and optimization, design analysis, procurement, production and cost aspects, evaluation and test, orbital performance, and illustrative design examples. A comprehensive index permits rapid locating of desired topics. The handbook consists of two volumes: Volume 1 is of an expository nature while Volume 2 contains detailed design data in an appendix-like fashion. Volume 2 includes solar cell performance data, applicable unit conversion factors and physical constants, and mechanical, electrical, thermal optical, magnetic, and outgassing material properties. Extensive references are provided.

Method to protect charge recombination in the back-contact dye-sensitized solar cell.

PubMed

Yoo, Beomjin; Kim, Kang-Jin; Lee, Doh-Kwon; Kim, Kyungkon; Ko, Min Jae; Kim, Yong Hyun; Kim, Won Mok; Park, Nam-Gyu

2010-09-13

We prepared a back-contact dye-sensitized solar cell and investigated effect of the sputter deposited thin TiO₂ film on the back-contact ITO electrode on photovoltaic property. The nanocrystalline TiO₂ layer with thickness of about 11 μm formed on a plain glass substrate in the back-contact structure showed higher optical transmittance than that formed on an ITO-coated glass substrate, which led to an improved photocurrent density by about 6.3%. However, photovoltage was found to decrease from 817 mV to 773 mV. The photovoltage recovered after deposition of a 35 nm-thick thin TiO₂ film on the surface of the back-contact ITO electrode. Little difference in time constant for electron transport was found for the back-contact ITO electrodes with and without the sputter deposited thin TiO₂ film. Whereas, time constant for charge recombination increased after introduction of the thin TiO₂ film, indicating that such a thin TiO₂ film protected back electron transfer, associated with the recovery of photovoltage. As the result of the improved photocurrent density without deterioration of photovoltage, the back-contact dye-sensitized solar cell exhibited 13.6% higher efficiency than the ITO-coated glass substrate-based dye-sensitized solar cell.

Novel materials for high-efficiency solar cells

NASA Astrophysics Data System (ADS)

Kojima, Nobuaki; Natori, Masato; Suzuki, Hidetoshi; Inagaki, Makoto; Ohshita, Yoshio; Yamaguchi, Masafumi

2009-08-01

Our Toyota Technological Institute group has investigated various novel materials for solar cells from organic to III-V compound materials. In this paper, we report our recent results in conductivity control of C60 thin films by metal-doping for organic solar cells, and mobility improvement of (In)GaAsN compounds for III-V tandem solar cells. The epitaxial growth of Mg-doped C60 films was attempted. It was found that the epitaxial growth of Mg-doped C60 film was enabled by using mica (001) substrate in the low Mg concentration region (Mg/C60 molar ratio < 1). The crystal quality of the epitaxial Mg-doped C60 film was improved drastically in compared with micro-crystalline film on glass substrate. Such drastic improvement of crystal quality in the epitaxial films resulted significant increase in conductivity. This result may indicate the significant increase of carrier mobility. Crystal quality improvement of CBE-grown GaAsN materials was investigated. We achieved the reduction of residual impurity concentration by chemical reaction control on the growing surface by modifying flow sequence of precursors and by increasing step density on the surface by using a vicinal GaAs substrate. Furthermore, the improvement in carrier mobility was observed, and it was suggested that the reduction of both residual impurities and N-related defects leads this improvement.

Efficient, flexible and mechanically robust perovskite solar cells on inverted nanocone plastic substrates.

PubMed

Tavakoli, Mohammad Mahdi; Lin, Qingfeng; Leung, Siu-Fung; Lui, Ga Ching; Lu, Hao; Li, Liang; Xiang, Bin; Fan, Zhiyong

2016-02-21

Utilization of nanostructures on photovoltaic devices can significantly improve the device energy conversion efficiency by enhancing the device light harvesting capability as well as carrier collection efficiency. However, improvements in device mechanical robustness and reliability, particularly for flexible devices, have rarely been reported with in-depth understanding. In this work, we fabricated efficient, flexible and mechanically robust organometallic perovskite solar cells on plastic substrates with inverted nanocone (i-cone) structures. Compared with the reference cell that was fabricated on a flat substrate, it was shown that the device power conversion efficiency could be improved by 37%, and reached up to 11.29% on i-cone substrates. More interestingly, it was discovered that the performance of an i-cone device remained more than 90% of the initial value even after 200 mechanical bending cycles, which is remarkably better than for the flat reference device, which degraded down to only 60% in the same test. Our experiments, coupled with mechanical simulation, demonstrated that a nanostructured template can greatly help in relaxing stress and strain upon device bending, which suppresses crack nucleation in different layers of a perovskite solar cell. This essentially leads to much improved device reliability and robustness and will have significant impact on practical applications.

Dopant ink composition and method of fabricating a solar cell there from

DOEpatents

Loscutoff, Paul; Wu, Kahn; Molesa, Steven Edward

2017-10-25

Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

Dopant ink composition and method of fabricating a solar cell there from

DOEpatents

Loscutoff, Paul; Wu, Kahn; Molesa, Steven Edward

2015-03-31

Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

Method for processing silicon solar cells

DOEpatents

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Method for processing silicon solar cells

DOEpatents

Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

1997-01-01

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Stability of perovskite solar cells on flexible substrates

NASA Astrophysics Data System (ADS)

Tam, Ho Won; Chen, Wei; Liu, Fangzhou; He, Yanling; Leung, Tik Lun; Wang, Yushu; Wong, Man Kwong; Djurišić, Aleksandra B.; Ng, Alan Man Ching; He, Zhubing; Chan, Wai Kin; Tang, Jinyao

2018-02-01

Perovskite solar cells are emerging photovoltaic technology with potential for low cost, high efficiency devices. Currently, flexible devices efficiencies over 15% have been achieved. Flexible devices are of significant interest for achieving very low production cost via roll-to-roll processing. However, the stability of perovskite devices remains a significant challenge. Unlike glass substrate which has negligible water vapor transmission rate (WVTR), polymeric flexible film substrates suffer from high moisture permeability. As PET and PEN flexible substrates exhibit higher water permeability then glass, transparent flexible backside encapsulation should be used to maximize light harvesting in perovskite layer while WVTR should be low enough. Wide band gap materials are transparent in the visible spectral range low temperature processable and can be a moisture barrier. For flexible substrates, approaches like atomic layer deposition (ALD) and low temperature solution processing could be used for metal oxide deposition. In this work, ALD SnO2, TiO2, Al2O3 and solution processed spin-on-glass was used as the barrier layer on the polymeric side of indium tin oxide (ITO) coated PEN substrates. The UV-Vis transmission spectra of the prepared substrates were investigated. Perovskite solar cells will be fabricated and stability of the devices were encapsulated with copolymer films on the top side and tested under standard ISOS-L-1 protocol and then compared to the commercial unmodified ITO/PET or ITO/PEN substrates. In addition, devices with copolymer films laminated on both sides successfully surviving more than 300 hours upon continuous AM1.5G illumination were demonstrated.

Heteroepitaxial Cu 2O thin film solar cell on metallic substrates

DOE PAGES

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; ...

2015-11-06

Heteroepitaxial, single-crystal-like Cu 2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu 2O films on low cost, flexible, textured metallic substrates. Cu 2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu 2O phase without any trace of CuO phase is only formed in a limited deposition window of P(Omore » 2) - temperature. The (00l) single-oriented, highly textured, Cu 2O films deposited under optimum P(O 2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm 2 V -1 s -1 and carrier concentration over 10 16 cm -3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu 2O solar cell based on epitaxial Cu 2O film prepared on the textured metal substrate.« less

Heteroepitaxial Cu2O thin film solar cell on metallic substrates

PubMed Central

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

2015-01-01

Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40–60 cm2 V−1 s−1 and carrier concentration over 1016 cm−3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate. PMID:26541499

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Status of flexible CIS research at ISET

NASA Technical Reports Server (NTRS)

Basol, B. M.; Kapur, V. K.; Minnick, A.; Halani, A.; Leidholm, C. R.

1994-01-01

Polycrystalline thin film solar cells fabricated on light-weight, flexible substrates are very attractive for space applications. In this work CulnSe2 (CIS) based thin film devices were processed on metallic foil substrates using the selenization technique. CIS deposition method involved reaction of electron-bean evaporated Cu-In precursor layers with a selenizing atmosphere at around 400 C. Several metallic foils such as Mo, Ti, Al, Ni, and Cu were evaluated as possible substrates for these devices. Solar cells with AM1.5 efficiencies of 9.0-9.34 percent and good mechanical integrity were demonstrated on Mo and Ti foils. Monolithic integration of these devices was also demonstrated up to 4 in x 4 in size.

Thin film solar cell configuration and fabrication method

DOEpatents

Menezes, Shalini

2009-07-14

A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

IMM Solar Cell Shows Its Versatility - Continuum Magazine | NREL

Science.gov Websites

. Inventing a new type of solar cell is one thing. Setting efficiency records with it and winning major awards add to the achievement. But when one of the world's leading manufacturers of compound semiconductor thin metal foil, and the substrate that the cell was grown on is removed. One advantage of this

Optimization studies of bio-hydrogen production in a coupled microbial electrolysis-dye sensitized solar cell system.

PubMed

Ajayi, Folusho Francis; Kim, Kyoung-Yeol; Chae, Kyu-Jung; Choi, Mi-Jin; Chang, In Seop; Kim, In S

2010-03-01

Bio-hydrogen production in light-assisted microbial electrolysis cell (MEC) with a dye sensitized solar cell (DSSC) was optimized by connecting multiple MECs to a single dye (N719) sensitized solar cell (V(OC) approx. 0.7 V). Hydrogen production occurred simultaneously in all the connected MECs when the solar cell was irradiated with light. The amount of hydrogen produced in each MEC depends on the activity of the microbial catalyst on their anode. Substrate (acetate) to hydrogen conversion efficiencies ranging from 42% to 65% were obtained from the reactors during the experiment. A moderate light intensity of 430 W m(-2) was sufficient for hydrogen production in the coupled MEC-DSSC. A higher light intensity of 915 W m(-2), as well as an increase in substrate concentration, did not show any improvement in the current density due to limitation caused by the rate of microbial oxidation on the anode. A significant reduction in the surface area of the connected DSSC only showed a slight effect on current density in the coupled MEC-DSSC system when irradiated with light.

Single crystal and polycrystalline GaAs solar cells using AMOS technology

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M.

1976-01-01

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

Substrate for thin silicon solar cells

DOEpatents

Ciszek, Theodore F.

1998-01-01

A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

DOEpatents

Albin, David S.; Noufi, Rommel

2015-06-09

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2015-10-20

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2014-07-15

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Epitaxial solar cells fabrication

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1975-01-01

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

PubMed Central

Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

2014-01-01

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

Simulation optimizing of n-type HIT solar cells with AFORS-HET

NASA Astrophysics Data System (ADS)

Yao, Yao; Xiao, Shaoqing; Zhang, Xiumei; Gu, Xiaofeng

2017-07-01

This paper presents a study of heterojunction with intrinsic thin layer (HIT) solar cells based on n-type silicon substrates by a simulation software AFORS-HET. We have studied the influence of thickness, band gap of intrinsic layer and defect densities of every interface. Details in mechanisms are elaborated as well. The results show that the optimized efficiency reaches more than 23% which may give proper suggestions to practical preparation for HIT solar cells industry.

Advanced Archival Memory

DTIC Science & Technology

1977-07-01

layer as thin as possible. The dead layer phenomena has been observed by other researchers working in the area of solar cells and nuclear particle...solution for the planar diode substrate. Solar cell researchers have had some success in producing -40- •^,.^,„>.^,u.^ ....... .• .„..^....L...A^.^.^:.*.,». ’ ’ "•"’•’•" i.i»miii«i • i immmßm^m i P-PJP adequately thin dead layers for solar cell applications by

Laser-assisted solar cell metallization processing

NASA Technical Reports Server (NTRS)

Dutta, S.

1984-01-01

Laser assisted processing techniques utilized to produce the fine line, thin metal grid structures that are required to fabricate high efficiency solar cells are investigated. The tasks comprising these investigations are summarized. Metal deposition experiments are carried out utilizing laser assisted pyrolysis of a variety of metal bearing polymer films and metalloorganic inks spun onto silicon substrates. Laser decomposition of spun on silver neodecanoate ink yields very promising results. Solar cell comb metallization patterns are written using this technique.

Novel Solvent-free Perovskite Deposition in Fabrication of Normal and Inverted Architectures of Perovskite Solar Cells

PubMed Central

Nejand, Bahram Abdollahi; Gharibzadeh, Saba; Ahmadi, Vahid; Shahverdi, H. Reza

2016-01-01

We introduced a new approach to deposit perovskite layer with no need for dissolving perovskite precursors. Deposition of Solution-free perovskite (SFP) layer is a key method for deposition of perovskite layer on the hole or electron transport layers that are strongly sensitive to perovskite precursors. Using deposition of SFP layer in the perovskite solar cells would extend possibility of using many electron and hole transport materials in both normal and invert architectures of perovskite solar cells. In the present work, we synthesized crystalline perovskite powder followed by successful deposition on TiO2 and cuprous iodide as the non-sensitve and sensitive charge transport layers to PbI2 and CH3NH3I solution in DMF. The post compressing step enhanced the efficiency of the devices by increasing the interface area between perovskite and charge transport layers. The 9.07% and 7.71% cell efficiencies of the device prepared by SFP layer was achieved in respective normal (using TiO2 as a deposition substrate) and inverted structure (using CuI as deposition substrate) of perovskite solar cell. This method can be efficient in large-scale and low cost fabrication of new generation perovskite solar cells. PMID:27640991

Evaluation of glass resin coatings for solar cell applications

NASA Technical Reports Server (NTRS)

Field, M. B.

1978-01-01

Using a variety of non-vacuum deposition techniques coatings were implemented on silicon solar cells and arrays of cells interconnected on Kapton substrates. The coatings provide both antireflection optical matching and environmental protection. Reflectance minima near 2% was achieved at a single wavelength in the visible. Reflectance averaging below 5% across the useful collection range was demonstrated. The coatings and methods of deposition were: (1) Ta2O5 spun, dipped or sprayed; (2) Ta2O5.SiO2 spun, dipped or sprayed; (3) GR908 (SiO2) spun, dipped, or sprayed. Total coating thickness were in the range of 18 microns to 25 microns. The coatings and processes are compatible with single cells or cells mounted on Kapton substrates.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

NASA Astrophysics Data System (ADS)

Franken, R. H.-J.

2006-09-01

With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes at this surface. Additionally, we show that we can control the lateral feature sizes and obtain an optimized roughness for light scattering. With this new knowledge we were able to indicate the influence of the surface plasmon absorption of the textured Ag layers on the current enhancement and recognize this effect as one of the limiting factors to the current increase in thin film solar cells. Finally we present the dark and light current voltage (J-V) parameters of muc-Si:H solar cells as a function of the rms roughness of the substrate. We show that increased roughness can result in an increased defect density of the absorbing silicon layer (i layer), which limits the current collection in the solar cell. The presented research gives better understanding of the effect of TCOs and textured interfaces on light trapping and current enhancement in thin film silicon solar cells. The thesis explains some fundamental insights in light scattering and reveals some material and morphology features that are dominantly limiting the current generation in muc-Si:H solar cells deposited on light scattering back reflectors. Furthermore, it presents a method to obtain optimized back scattering contacts at deposition temperatures below 300 oC, which opens the possibility for the use of heat resistant plastic substrates. We improved the muc-Si:H solar cell efficiency with flat back reflectors from 4.5 % and 14.6 mA/cm2 to 8.5 % and 23.4 mA/cm2 with the use of optimized back reflectors.

Superstrate sub-cell voltage-matched multijunction solar cells

DOEpatents

Mascarenhas, Angelo; Alberi, Kirstin

2016-03-15

Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Prediction Of Critical Crack Sizes In Solar Cells

NASA Technical Reports Server (NTRS)

Chen, Chern P.

1989-01-01

Report presents theoretical analysis of cracking in Si and GaAs solar photovoltaic cells subjected to bending or twisting. Analysis also extended to predict critical sizes for cracks in Ge substrate coated with thin film of GaAs. Analysis leads to general conclusions. Approach and results of study useful in development of guidelines for acceptance or rejection of slightly flawed cells during manufacture.

Development of high-performance GaInAsP solar cells for tandem solar cell applications

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ward, J. S.; Gessert, T. A.; Emery, K. A.; Horner, G. S.

1990-01-01

Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.

Robust and Recyclable Substrate Template with an Ultrathin Nanoporous Counter Electrode for Organic-Hole-Conductor-Free Monolithic Perovskite Solar Cells.

PubMed

Li, Ming-Hsien; Yang, Yu-Syuan; Wang, Kuo-Chin; Chiang, Yu-Hsien; Shen, Po-Shen; Lai, Wei-Chih; Guo, Tzung-Fang; Chen, Peter

2017-12-06

A robust and recyclable monolithic substrate applying all-inorganic metal-oxide selective contact with a nanoporous (np) Au:NiO x counter electrode is successfully demonstrated for efficient perovskite solar cells, of which the perovskite active layer is deposited in the final step for device fabrication. Through annealing of the Ni/Au bilayer, the nanoporous NiO/Au electrode is formed in virtue of interconnected Au network embedded in oxidized Ni. By optimizing the annealing parameters and tuning the mesoscopic layer thickness (mp-TiO 2 and mp-Al 2 O 3 ), a decent power conversion efficiency (PCE) of 10.25% is delivered. With mp-TiO 2 /mp-Al 2 O 3 /np-Au:NiO x as a template, the original perovskite solar cell with 8.52% PCE can be rejuvenated by rinsing off the perovskite material with dimethylformamide and refilling with newly deposited perovskite. A renewed device using the recycled substrate once and twice, respectively, achieved a PCE of 8.17 and 7.72% that are comparable to original performance. This demonstrates that the novel device architecture is possible to recycle the expensive transparent conducting glass substrates together with all the electrode constituents. Deposition of stable multicomponent perovskite materials in the template also achieves an efficiency of 8.54%, which shows its versatility for various perovskite materials. The application of such a novel NiO/Au nanoporous electrode has promising potential for commercializing cost-effective, large scale, and robust perovskite solar cells.

Photovoltaic cell with nano-patterned substrate

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2016-10-18

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Method of construction of a multi-cell solar array

NASA Technical Reports Server (NTRS)

Routh, D. E.; Hollis, B. R., Jr.; Feltner, W. R. (Inventor)

1979-01-01

The method of constructing a high voltage, low power, multicell solar array is described. A solar cell base region is formed in a substrate such as but not limited to silicon or sapphire. A protective coating is applied on the base and a patterned etching of the coating and base forms discrete base regions. A semiconductive junction and upper active region are formed in each base region, and defined by photolithography. Thus, discrete cells which are interconnected by metallic electrodes are formed.

Development of a shingle-type solar cell module

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.; Sanchez, L. E.

1978-01-01

The development of a solar cell module, which is suitable for use in place of shingles on the sloping roofs of residental or commercial buildings, is reported. The design consists of nineteen series-connected 53 mm diameter solar cells arranged in a closely packed hexagon configuration. The shingle solar cell module consists of two basic functional parts: an exposed rigid portion which contains the solar cell assembly, and a semi-flexible portion which is overlapped by the higher courses of the roof installation. Consideration is given to the semi-flexible substrate configuration and solar cell and module-to-module interconnectors. The results of an electrical performance analysis are given and it is noted that high specific power output can be attributed to the efficient packing of the circular cells within the hexagon shape. The shingle should function for at least 15 years, with a specific power output of 98 W/sq w.

Integrated thin film cadmium sulfide solar cell module

NASA Technical Reports Server (NTRS)

Mickelsen, R. A.; Abbott, D. D.

1971-01-01

The design, development, fabrication and tests of flexible integrated thin-film cadmium sulfide solar cells and modules are discussed. The development of low cost and high production rate methods for interconnecting cells into large solar arrays is described. Chromium thin films were applied extensively in the deposited cell structures as a means to: (1) achieve high adherence between the cadmium sulfide films and the vacuum-metallized copper substrates, (2) obtain an ohmic contact to the cadmium sulfide films, and (3) improve the adherence of gold films as grids or contact areas.

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, D. H.; Das Arulsamy, A.; Rider, A. E.

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si{sup 3+} and Si{sup 1+} ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nmmore » size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si{sup 1+} ions in a low substrate temperature range (227-327 deg. C). As low substrate temperatures ({<=}500 deg. C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.« less

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

NASA Astrophysics Data System (ADS)

Seo, D. H.; Rider, A. E.; Das Arulsamy, A.; Levchenko, I.; Ostrikov, K.

2010-01-01

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si3+ and Si1+ ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nm size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si1+ ions in a low substrate temperature range (227-327 °C). As low substrate temperatures (≤500 °C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.

Thin Film Photovoltaic Cells on Flexible Substrates Integrated with Energy Storage

DTIC Science & Technology

2012-07-01

selected mass-altered planes is varied, we have constructed a simple one-dimensional lattice that approximates the solids simulated previously with...to Sn atoms added to a silicon lattice). Development of Solid State Supercapacitors Integrated with Solar cells for Solar Electricity Storage This... supercapacitor for solar electricity storage. These areas and the major tasks therein are: (i) Supercapacitor Electrodes: We have investigated an approach to

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Heaps, J. D.; Maciolek, R. B.; Zook, J. D.; Harrison, W. B.; Scott, M. W.; Hendrickson, G.; Wolner, H. A.; Nelson, L. D.; Schuller, T. L.; Peterson, A. A.

1976-01-01

The technical and economic feasibility of producing solar cell quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large grain polycrystalline silicon was investigated. The dip-coating methods studied were directed toward a minimum cost process with the ultimate objective of producing solar cells with a conversion efficiency of 10% or greater. The technique shows excellent promise for low cost, labor-saving, scale-up potentialities and would provide an end product of sheet silicon with a rigid and strong supportive backing. An experimental dip-coating facility was designed and constructed, several substrates were successfully dip-coated with areas as large as 25 sq cm and thicknesses of 12 micron to 250 micron. There appears to be no serious limitation on the area of a substrate that could be coated. Of the various substrate materials dip-coated, mullite appears to best satisfy the requirement of the program. An inexpensive process was developed for producing mullite in the desired geometry.

Method of making photovoltaic cell

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2017-06-20

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Light management in perovskite solar cells and organic LEDs with microlens arrays

DOE PAGES

Peer, Akshit; Biswas, Rana; Park, Joong -Mok; ...

2017-04-28

Here, we demonstrate enhanced absorption in solar cells and enhanced light emission in OLEDs by light interaction with a periodically structured microlens array. We simulate n-i-p perovskite solar cells with a microlens at the air-glass interface, with rigorous scattering matrix simulations. The microlens focuses light in nanoscale regions within the absorber layer enhancing the solar cell. Optimal period of ~700 nm and microlens height of ~800-1000 nm, provides absorption (photocurrent) enhancement of 6% (6.3%). An external polymer microlens array on the air-glass side of the OLED generates experimental and theoretical enhancements >100%, by outcoupling trapped modes in the glass substrate.

Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates

PubMed Central

Lee, Chi Hwan; Kim, Dong Rip; Cho, In Sun; William, Nemeth; Wang, Qi; Zheng, Xiaolin

2012-01-01

Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peeling off the fully fabricated TFSCs from the original Si wafer and attaching TFSCs to virtually any substrates regardless of materials, flatness and rigidness. With the peel-and-stick process, we integrated hydrogenated amorphous silicon (a-Si:H) TFSCs on paper, plastics, cell phone and building windows while maintaining the original 7.5% efficiency. The new peel-and-stick process enables further reduction of the cost and weight for TFSCs and endows TFSCs with flexibility and attachability for broader application areas. We believe that the peel-and-stick process can be applied to thin film electronics as well. PMID:23277871

Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Dong Rip; Cho, In Sun; William, Nemeth; Wang, Qi; Zheng, Xiaolin

2012-12-01

Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peeling off the fully fabricated TFSCs from the original Si wafer and attaching TFSCs to virtually any substrates regardless of materials, flatness and rigidness. With the peel-and-stick process, we integrated hydrogenated amorphous silicon (a-Si:H) TFSCs on paper, plastics, cell phone and building windows while maintaining the original 7.5% efficiency. The new peel-and-stick process enables further reduction of the cost and weight for TFSCs and endows TFSCs with flexibility and attachability for broader application areas. We believe that the peel-and-stick process can be applied to thin film electronics as well.

Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Ziyun, E-mail: z.lin@unsw.edu.au; Wu, Lingfeng; Jia, Xuguang

2015-07-28

Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred comparedmore » to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.« less

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; ...

2015-10-12

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher thanmore » other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.« less

Investigation of test methods, material properties, and processes for solar cell encapsulants

NASA Technical Reports Server (NTRS)

Willis, P. B.

1981-01-01

Encapsulant materials and processes for the production of cost-effective, long-life solar cell modules were investigated. The following areas were explored: (1) soil resistant surface treatment; (2) corrosion protecting coatings from mild steel substrates; (3) primers for bonding module interfaces; and (4) RS/4 accelerated aging of candidate encapsulation compounds

Design of epitaxial CdTe solar cells on InSb substrates

DOE PAGES

Song, Tao; Kanevce, Ana; Sites, James R.

2015-11-01

Epitaxial CdTe has been shown by others to have a radiative recombination rate approaching unity, high carrier concentration, and low defect density. It has, therefore, become an attractive candidate for high-efficiency solar cells, perhaps becoming competitive with GaAs. The choice of substrate is a key design feature for epitaxial CdTe solar cells, and several possibilities (CdTe, Si, GaAs, and InSb) have been investigated by others. All have challenges, and these have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a closemore » lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. Three strategies to address the band-offset problem are investigated by numerical simulation: heavy doping of the back part of the CdTe layer, incorporation of an intermediate CdMgTe or CdZnTe layer, and the formation of an InSb tunnel junction. Lastly, wach of these strategies is predicted to be helpful for higher cell performance, but a combination of the first two should be most effective.« less

Bonding machine for forming a solar array strip

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Downing, R. G.; Middleton, O.; Mueller, R. L.; Yasui, R. K.; Cairo, F. J.; Person, J. K. (Inventor)

1979-01-01

A machine is described for attaching solar cells to a flexable substrate on which printed circuitry has been deposited. The strip is fed through: (1) a station in which solar cells are elevated into engagement with solder pads for the printed circuitry and thereafter heated by an infrared lamp; (2) a station at which flux and solder residue is removed; (3) a station at which electrical performance of the soldered cells is determined; (4) a station at which an encapsulating resin is deposited on the cells; (5) a station at which the encapsulated solar cells are examined for electrical performance; and (6) a final station at which the resulting array is wound on a takeup drum.

Highly Efficient Flexible Perovskite Solar Cells with Antireflection and Self-Cleaning Nanostructures.

PubMed

Tavakoli, Mohammad Mahdi; Tsui, Kwong-Hoi; Zhang, Qianpeng; He, Jin; Yao, Yan; Li, Dongdong; Fan, Zhiyong

2015-10-27

Flexible thin film solar cells have attracted a great deal of attention as mobile power sources and key components for building-integrated photovoltaics, due to their light weight and flexible features in addition to compatibility with low-cost roll-to-roll fabrication processes. Among many thin film materials, organometallic perovskite materials are emerging as highly promising candidates for high efficiency thin film photovoltaics; however, the performance, scalability, and reliability of the flexible perovskite solar cells still have large room to improve. Herein, we report highly efficient, flexible perovskite solar cells fabricated on ultrathin flexible glasses. In such a device structure, the flexible glass substrate is highly transparent and robust, with low thermal expansion coefficient, and perovskite thin film was deposited with a thermal evaporation method that showed large-scale uniformity. In addition, a nanocone array antireflection film was attached to the front side of the glass substrate in order to improve the optical transmittance and to achieve a water-repelling effect at the same time. It was found that the fabricated solar cells have reasonable bendability, with 96% of the initial value remaining after 200 bending cycles, and the power conversion efficiency was improved from 12.06 to 13.14% by using the antireflection film, which also demonstrated excellent superhydrophobicity.

Solar array strip and a method for forming the same

NASA Technical Reports Server (NTRS)

Mueller, R. L.; Yasui, R. K. (Inventor)

1979-01-01

A flexible solar array strip is formed by providing printed circuitry between flexible layers of a nonconductive material, depositing solder pads on the printed circuitry, and storing the resulting substrate on a drum from which it is then withdrawn and advanced along a linear path. Solderless solar cells are serially transported into engagement with the pads and are infrared radiation to melt the solder and attach the cells to the circuitry. Excess flux is cleaned from the solar cells which are then encapsulated in a protective coating. The resulting array is then wound on a drum.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

PubMed

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

Spectrally-engineered solar thermal photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lenert, Andrej; Bierman, David; Chan, Walker

A solar thermal photovoltaic device, and method of forming same, includes a solar absorber and a spectrally selective emitter formed on either side of a thermally conductive substrate. The solar absorber is configured to absorb incident solar radiation. The solar absorber and the spectrally selective emitter are configured with an optimized emitter-to-absorber area ratio. The solar thermal photovoltaic device also includes a photovoltaic cell in thermal communication with the spectrally selective emitter. The spectrally selective emitter is configured to permit high emittance for energies above a bandgap of the photovoltaic cell and configured to permit low emittance for energies belowmore » the bandgap.« less

High Radiation Resistance IMM Solar Cell

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Flexible, FEP-Teflon covered solar cell module development

NASA Technical Reports Server (NTRS)

Rauschenbach, H. S.; Cannady, M. D.

1976-01-01

Techniques and equipment were developed for the large scale, low-cost fabrication of lightweight, roll-up and fold-up, FEP-Teflon encapsulated solar cell modules. Modules were fabricated by interconnecting solderless single-crystal silicon solar cells and heat laminating them at approximately 300 C between layers of optically clear FEP and to a loadbearing Kapton substrate sheet. Modules were fabricated from both conventional and wraparound contact solar cells. A heat seal technique was developed for mechanically interconnecting modules into an array. The electrical interconnections for both roll-up and fold-up arrays were also developed. The use of parallel-gap resistance welding, ultrasonic bonding, and thermocompression bonding processes for attaching interconnects to solar cells were investigated. Parallel-gap welding was found to be best suited for interconnecting the solderless solar cells into modules. Details of the fabrication equipment, fabrication processes, module and interconnect designs, environmental test equipment, and test results are presented.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2013-07-23

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

NASA Technical Reports Server (NTRS)

Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

2005-01-01

Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

Electrospinning Nanofiber Based Organic Solar Cell

NASA Astrophysics Data System (ADS)

Yang, Zhenhua; Liu, Ying; Moffa, Maria; Nam, Chang-Yong; Pisignano, Dario; Rafailovich, Miriam

Bulk heterojunction (BHJ) polymer solar cells are an area of intense interest due to their potential to result in printable, inexpensive solar cells which can be processed onto flexible substrates. The active layer is typically spin coated from the solution of polythiophene derivatives (donor) and fullerenes (acceptor) and interconnected domains are formed because of phase separation. However, the power conversion efficiency (PCE) of BHJ solar cell is restricted by the presence of unfavorable morphological features, including dead ends or isolated domains. Here we MEH-PPV:PVP:PCBM electrospun nanofiber into BHJ solar cell for the active layer morphology optimization. Larger interfacial area between donor and acceptor is abtained with electrospinning method and the high aspect ratio of the MEH-PPV:PVP:PCBM nanofibers allow them to easily form a continuous pathway. The surface morphology is investigated with atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrospun nanofibers are discussed as a favorable structure for application in bulk-heterojunction organic solar cells. Electrospinning Nanofiber Based Bulk Heterojunction Organic Solar Cell.

Flexible hybrid energy cell for simultaneously harvesting thermal, mechanical, and solar energies.

PubMed

Yang, Ya; Zhang, Hulin; Zhu, Guang; Lee, Sangmin; Lin, Zong-Hong; Wang, Zhong Lin

2013-01-22

We report the first flexible hybrid energy cell that is capable of simultaneously or individually harvesting thermal, mechanical, and solar energies to power some electronic devices. For having both the pyroelectric and piezoelectric properties, a polarized poly(vinylidene fluoride) (PVDF) film-based nanogenerator (NG) was used to harvest thermal and mechanical energies. Using aligned ZnO nanowire arrays grown on the flexible polyester (PET) substrate, a ZnO-poly(3-hexylthiophene) (P3HT) heterojunction solar cell was designed for harvesting solar energy. By integrating the NGs and the solar cells, a hybrid energy cell was fabricated to simultaneously harvest three different types of energies. With the use of a Li-ion battery as the energy storage, the harvested energy can drive four red light-emitting diodes (LEDs).

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

PubMed

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Porous silicon-copper phthalocyanine heterostructure based photoelectrochemical cell

NASA Astrophysics Data System (ADS)

A. Betty, C.; N, Padma; Arora, Shalav; Survaiya, Parth; Bhattacharya, Debarati; Choudhury, Sipra; Roy, Mainak

2018-01-01

A hybrid solar cell consisting of nanostructured p-type porous silicon (PS) deposited with visible light absorbing dye, Copper Phthalocyanine (CuPc) has been prepared in the photoelectrochemical cell configuration. P-type PS with (100) and (111) orientations which have different porous structures were used for studying the effects of the substrate morphology on the cell efficiency. Heterostructures were prepared by depositing three different thicknesses of CuPc for optimizing the cell efficiency. Structural and surface characterizations were studied using XRD, Raman, SEM and AFM on the PS-CuPc heterostructure. XRD spectrum on both plane silicon and porous silicon indicates the π-π stacking of CuPc with increased disorder for CuPc film on porous silicon. Electrochemical characterizations under sun light type radiation have been carried out to evaluate the photosensitivity of the heterostructure. Between the two different substrates, (100) PS gives better photocurrent, possibly due to the higher surface area and lower series resistance of the structure. Among the (100) PS substrates, (100) PS with 15 nm CuPc film gives Voc more than 1 V resulting in higher efficiency for the cell. The study suggests the scope for optimization of solar cell efficiency using various combinations of the substrate structure and thickness of the sensitizing layer.

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, Benjia; Miller, Elisa M.; Christians, Jeffrey A.

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. Here, we highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. And while tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devicesmore » underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.« less

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO

DOE PAGES

Dou, Benjia; Miller, Elisa M.; Christians, Jeffrey A.; ...

2017-09-27

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. Here, we highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. And while tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devicesmore » underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.« less

Direct Low-Temperature Growth of Single-Crystalline Anatase TiO2 Nanorod Arrays on Transparent Conducting Oxide Substrates for Use in PbS Quantum-Dot Solar Cells.

PubMed

Chung, Hyun Suk; Han, Gill Sang; Park, So Yeon; Shin, Hee-Won; Ahn, Tae Kyu; Jeong, Sohee; Cho, In Sun; Jung, Hyun Suk

2015-05-20

We report on the direct growth of anatase TiO2 nanorod arrays (A-NRs) on transparent conducting oxide (TCO) substrates that can be directly applied to various photovoltaic devices via a seed layer mediated epitaxial growth using a facile low-temperature hydrothermal method. We found that the crystallinity of the seed layer and the addition of an amine functional group play crucial roles in the A-NR growth process. The A-NRs exhibit a pure anatase phase with a high crystallinity and preferred growth orientation in the [001] direction. Importantly, for depleted heterojunction solar cells (TiO2/PbS), the A-NRs improve both electron transport and injection properties, thereby largely increasing the short-circuit current density and doubling their efficiency compared to TiO2 nanoparticle-based solar cells.

Atmospheric-Pressure-Spray, Chemical- Vapor-Deposited Thin-Film Materials Being Developed for High Power-to- Weight-Ratio Space Photovoltaic Applications

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Harris, Jerry D.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Smith, Mark A.; Cowen, Jonathan E.

2001-01-01

The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

Highly Efficient Flexible Quantum Dot Solar Cells with Improved Electron Extraction Using MgZnO Nanocrystals.

PubMed

Zhang, Xiaoliang; Santra, Pralay Kanti; Tian, Lei; Johansson, Malin B; Rensmo, Håkan; Johansson, Erik M J

2017-08-22

Colloidal quantum dot (CQD) solar cells have high potential for realizing an efficient and lightweight energy supply for flexible or wearable electronic devices. To achieve highly efficient and flexible CQD solar cells, the electron transport layer (ETL), extracting electrons from the CQD solid layer, needs to be processed at a low-temperature and should also suppress interfacial recombination. Herein, a highly stable MgZnO nanocrystal (MZO-NC) layer is reported for efficient flexible PbS CQD solar cells. Solar cells fabricated with MZO-NC ETL give a high power conversion efficiency (PCE) of 10.4% and 9.4%, on glass and flexible plastic substrates, respectively. The reported flexible CQD solar cell has the record efficiency to date of flexible CQD solar cells. Detailed theoretical simulations and extensive characterizations reveal that the MZO-NCs significantly enhance charge extraction from CQD solids and diminish the charge accumulation at the ETL/CQD interface, suppressing charge interfacial recombination. These important results suggest that the low-temperature processed MZO-NCs are very promising for use in efficient flexible solar cells or other flexible optoelectronic devices.

Multi-100 kW: Planar low cost solar array development

NASA Technical Reports Server (NTRS)

1982-01-01

The applicability of selected low cost options to solar array blanket design was studied by fabricating representative modules and submitting them to thermal cycle environment. Large area (5.9 x 5.9 cm) solar cells of 3 varieties were purchased: (1) Standard wraparound, (2) Copper contacts substituted for the conventional Titanium-Palladium-Silver, and (3) Standard wraparound except with gridded back contact instead of continuous metallization. The baseline cell was purchased to compare fabrication cost and to serve as a control cell during test evaluation of the other two cells. All cells were assembled into either substrate modules where the cell is individually filtered and welded to an integrated Kapton-copper circuit or into a superstrate configuration with 4 cells jointly adhered to a single sheet of microsheet and then welded to the integrated Kapton-copper circuit. Cell quality, particularly in the metallization of contacts, was less than desired. Problems were encountered with copper metallization in laying down a barrier metal which would ohmically bond to the silicon. The cells received were shunted (sintered) or with low contact pull strength (non-sintered), thus leading to the decision to solder rather than weld the copper cells to the Kapton substrate.

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

PubMed Central

Jaramillo, Rafael; Steinmann, Vera; Yang, Chuanxi; Hartman, Katy; Chakraborty, Rupak; Poindexter, Jeremy R.; Castillo, Mariela Lizet; Gordon, Roy; Buonassisi, Tonio

2015-01-01

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices. PMID:26067454

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Method of making a back contacted solar cell

DOEpatents

Gee, James M.

1995-01-01

A back-contacted solar cell having laser-drilled vias connecting the front-surface carrier-collector junction to an electrode grid on the back surface. The structure may also include a rear surface carrier-collector junction connected to the same grid. The substrate is connected to a second grid which is interdigitated with the first. Both grids are configured for easy series connection with neighboring cells. Several processes are disclosed to produce the cell.

Highly effective carbon sphere counter electrodes based on different substrates for dye-sensitized solar cell.

PubMed

Han, Qianji; Wang, Hongrui; Liu, Yali; Yan, Yajing; Wu, Mingxing

2017-11-15

A monodisperse carbon sphere with high uniformity, high catalytic activity and conductivity are successfully synthesized. Versatile counter electrodes using this carbon sphere catalyst on different substrates of fluorine-doped tin oxide (FTO) glass, indium-doped tin oxide polyethylenena phthalate (ITO-PEN), and Ti foil are fabricated for dye-sensitized solar cell (DSC). The impacts of substrates on the catalytic activities of the carbon sphere counter electrodes have been also evaluated by electrochemical analysis technologies, such as cyclic voltammetry, electrochemical impedance spectroscopy and Tafel polarization curves. With cobalt electrolyte, the DSC using carbon sphere counter electrodes based on FTO glass, ITO-PEN, and Ti substrates yield high power conversion efficiency values of 8.57%, 6.66%, and 9.10%, respectively. The catalytic activities of the prepared carbon sphere counter electrodes on different substrates are determined by the apparent activation energy for the cobalt redox couple regeneration on these electrodes. Copyright © 2017 Elsevier Inc. All rights reserved.

Fabrication of non-hexagonal close packed colloidal array on a substrate by transfer

NASA Astrophysics Data System (ADS)

Banik, Meneka; Mukherjee, Rabibrata

Self-organized colloidal arrays find application in fabrication of solar cells with advanced light management strategies. We report a simple spincoating based approach for fabricating two dimensional colloidal crystals with hexagonal and non-hexagonal close packed assembly on flat and nanopatterned substrates. The non-HCP arrays were fabricated by spin coating the particles onto soft lithographically fabricated substrates. The substrate patterns impose directionality to the particles by confining them within the grooves. We have developed a technique by which the HCP and non-HCP arrays can be transferred to any surface. For this purpose the colloidal arrays were fabricated on a UV degradable PMMA layer, resulting in transfer of the particles on UV exposure. This allows the colloidal structures to be transported across substrates irrespective of their surface energy, wettability or morphology. Since the particles are transferred without exposing it to any kind of chemical or thermal environment, it can be utilized for placing particles on top of thin film solar cells for improving their absorption efficiency.

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

2004-01-01

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Once the technology has gained spaceflight certification it should find rapid acceptance in specific satellite markets.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Use of Glass Reinforced Concrete (GRC) as a substrate for photovoltaic modules

NASA Technical Reports Server (NTRS)

Eirls, J. L.

1980-01-01

A substrate for flat plate photovoltaic solar panel arrays using a glass fiber reinforced concrete (GRC) material was developed. The installed cost of this GRC panel is 30% less than the cost goal of the Near Term Low-Cost Flat Plate Photovoltaic Solar Array Program. The 4 ft by 8 ft panel is fabricated from readily available inexpensive materials, weighs a nominal 190 lbs., has exceptionally good strength and durability properties (rigid and resists weathering), is amenable to mass production and is easily installed on simple mountings. Solar cells are encapsulated in ethylene/vinyl acetate with Tedlar backing and Korad cover film. The laminates are attached to the GRC substrate with acrylic transfer tape and edge sealed with silicone RTV adhesive.

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

PubMed

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

Single crystalline CH 3NH 3PbI 3 self-grown on FTO/TiO 2 substrate for high efficiency perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Jinjin; Kong, Guoli; Chen, Shulin

In this work, we developed an innovative approach to self-grow single crystalline CH 3NH 3PbI 3 directly on polycrystalline FTO/TiO 2 substrate, with which n-i-p type of perovskite solar cells were fabricated. The single crystalline nature of CH 3NH 3PbI 3 has been confirmed by X-ray diffraction and high resolution transmission electron microscopy, and it is observed that they possess smaller optic band gap and longer carrier life time. Highly efficient charge extractions occur at the interface between electron collecting TiO 2 and photo-harvesting CH 3NH 3PbI 3, resulting in a maximum short-circuit current density of 24.40 mA/cm 2. Themore » champion cell possesses a photovoltaic conversion efficiency of 8.78%, and there are still substantial room for further improvement, making it promising for the perovskite solar cell applications.« less

Single crystalline CH 3NH 3PbI 3 self-grown on FTO/TiO 2 substrate for high efficiency perovskite solar cells

DOE PAGES

Zhao, Jinjin; Kong, Guoli; Chen, Shulin; ...

2017-08-21

In this work, we developed an innovative approach to self-grow single crystalline CH 3NH 3PbI 3 directly on polycrystalline FTO/TiO 2 substrate, with which n-i-p type of perovskite solar cells were fabricated. The single crystalline nature of CH 3NH 3PbI 3 has been confirmed by X-ray diffraction and high resolution transmission electron microscopy, and it is observed that they possess smaller optic band gap and longer carrier life time. Highly efficient charge extractions occur at the interface between electron collecting TiO 2 and photo-harvesting CH 3NH 3PbI 3, resulting in a maximum short-circuit current density of 24.40 mA/cm 2. Themore » champion cell possesses a photovoltaic conversion efficiency of 8.78%, and there are still substantial room for further improvement, making it promising for the perovskite solar cell applications.« less

Technology requirements for GaAs photovoltaic arrays

NASA Technical Reports Server (NTRS)

Scott-Monck, J.; Rockey, D.

1981-01-01

An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

Controlling Morphological Parameters of Anodized Titania Nanotubes for Optimized Solar Energy Applications

PubMed Central

Haring, Andrew; Morris, Amanda; Hu, Michael

2012-01-01

Anodized TiO2 nanotubes have received much attention for their use in solar energy applications including water oxidation cells and hybrid solar cells [dye-sensitized solar cells (DSSCs) and bulk heterojuntion solar cells (BHJs)]. High surface area allows for increased dye-adsorption and photon absorption. Titania nanotubes grown by anodization of titanium in fluoride-containing electrolytes are aligned perpendicular to the substrate surface, reducing the electron diffusion path to the external circuit in solar cells. The nanotube morphology can be optimized for the various applications by adjusting the anodization parameters but the optimum crystallinity of the nanotube arrays remains to be realized. In addition to morphology and crystallinity, the method of device fabrication significantly affects photon and electron dynamics and its energy conversion efficiency. This paper provides the state-of-the-art knowledge to achieve experimental tailoring of morphological parameters including nanotube diameter, length, wall thickness, array surface smoothness, and annealing of nanotube arrays.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2015-07-21

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David; Cousins, Peter

2012-12-04

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2014-07-22

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline materiat layer; and forming conductive contacts in the plurality of contact holes.

Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

NASA Technical Reports Server (NTRS)

Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

GaAs shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Fan, J. C. C.

1981-01-01

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

Method for producing solar energy panels by automation

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A solar cell panel was fabricated by photoetching a pattern of collector grid systems with appropriate interconnections and bus bar tabs into a glass or plastic sheet. These regions were then filled with a first, thin conductive metal film followed by a layer of a mixed metal oxide, such as InAsO or InSnO. The multiplicity of solar cells were bonded between the protective sheet at the sites of the collector grid systems and a back electrode substrate by conductive metal filled epoxy to complete the fabrication of an integrated solar panel.

Silicon Nanowire/Polymer Hybrid Solar Cell-Supercapacitor: A Self-Charging Power Unit with a Total Efficiency of 10.5.

PubMed

Liu, Ruiyuan; Wang, Jie; Sun, Teng; Wang, Mingjun; Wu, Changsheng; Zou, Haiyang; Song, Tao; Zhang, Xiaohong; Lee, Shuit-Tong; Wang, Zhong Lin; Sun, Baoquan

2017-07-12

An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the integrated system is able to yield a total photoelectric conversion to storage efficiency of 10.5%, which is the record value in all the integrated solar energy conversion and storage system. This system may not only serve as a buffer that diminishes the solar power fluctuations from light intensity, but also pave its way toward cost-effective high efficiency self-charging power unit. Finally, an integrated device based on ultrathin Si substrate is demonstrated to expand its feasibility and potential application in flexible energy conversion and storage devices.

DC-pulse atmospheric-pressure plasma jet and dielectric barrier discharge surface treatments on fluorine-doped tin oxide for perovskite solar cell application

NASA Astrophysics Data System (ADS)

Tsai, Jui-Hsuan; Cheng, I.-Chun; Hsu, Cheng-Che; Chen, Jian-Zhang

2018-01-01

Nitrogen DC-pulse atmospheric-pressure plasma jet (APPJ) and nitrogen dielectric barrier discharge (DBD) were applied to pre-treat fluorine-doped tin oxide (FTO) glass substrates for perovskite solar cells (PSCs). Nitrogen DC-pulse APPJ treatment (substrate temperature: ~400 °C) for 10 s can effectively increase the wettability, whereas nitrogen DBD treatment (maximum substrate temperature: ~140 °C) achieved limited improvement in wettability even with increased treatment time of 60 s. XPS results indicate that 10 s APPJ, 60 s DBD, and 15 min UV-ozone treatment of FTO glass substrates can decontaminate the surface. A PSC fabricated on APPJ-treated FTO showed the highest power conversion efficiency (PCE) of 14.90%; by contrast, a PSC with nitrogen DBD-treated FTO shows slightly lower PCE of 12.57% which was comparable to that of a PSC on FTO treated by a 15 min UV-ozone process. Both nitrogen DC-pulse APPJ and nitrogen DBD can decontaminate FTO substrates and can be applied for the substrate cleaning step of PSC.

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

NASA Technical Reports Server (NTRS)

Coutts, T. J.

1987-01-01

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Homojunction GaAs solar cells grown by close space vapor transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.

2014-06-08

We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping,more » and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.« less

Development of a Thin Film Solar Cell Interconnect for the Powersphere Concept

NASA Technical Reports Server (NTRS)

Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen

2003-01-01

Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the Powersphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference.

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

PubMed

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)

NASA Astrophysics Data System (ADS)

Deng, Tianguo; Sato, Takuma; Xu, Zhihao; Takabe, Ryota; Yachi, Suguru; Yamashita, Yudai; Toko, Kaoru; Suemasu, Takashi

2018-06-01

B-doped p-BaSi2 epitaxial layers with a hole concentration of 1.1 × 1018 cm‑3 were grown on n-Si(001) using molecular beam epitaxy to fabricate p-BaSi2/n-Si solar cells. The thickness (d) of the p-BaSi2 layer was varied from 20 to 60 nm to investigate its effect on the solar cell performance. The conversion efficiency under an AM1.5 illumination increased with d reaching a maximum of 9.8% at d = 40 nm, which is nearly equal to the highest efficiency (9.9%) for p-BaSi2/n-Si solar cells on Si(111). This study indicated that Si(001) substrates are promising for use in BaSi2 solar cells.

Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

PubMed

Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

2016-05-01

HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

Method of making a back contacted solar cell

DOEpatents

Gee, J.M.

1995-11-21

A back-contacted solar cell is described having laser-drilled vias connecting the front-surface carrier-collector junction to an electrode grid on the back surface. The structure may also include a rear surface carrier-collector junction connected to the same grid. The substrate is connected to a second grid which is interdigitated with the first. Both grids are configured for easy series connection with neighboring cells. Several processes are disclosed to produce the cell. 2 figs.

InGaAs/InP solar cells for space application

NASA Technical Reports Server (NTRS)

Karlina, L. B.; Kazantsev, A. B.; Kozlovskii, V. V.; Mokina, I. A.; Shvarts, M. Z.

1995-01-01

The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.

Method and tool to reverse the charges in anti-reflection films used for solar cell applications

DOEpatents

Sharma, Vivek; Tracy, Clarence

2017-01-31

A method is provided for making a solar cell. The method includes providing a stack including a substrate, a barrier layer disposed on the substrate, and an anti-reflective layer disposed on the barrier layer, where the anti-reflective layer has charge centers. The method also includes generating a corona with a charging tool and contacting the anti-reflective layer with the corona thereby injecting charge into at least some of the charge centers in the anti-reflective layer. Ultra-violet illumination and temperature-based annealing may be used to modify the charge of the anti-reflective layer.

Deposition of InP-ON-Si Substrates for Monolithic Integration of Advanced Electronics

DTIC Science & Technology

1991-04-19

efficiency, 3 low-cost solar cells , optoelectronic IC’s and GaAs IC’s on large-area Si substrates. Although much work has been done, the performance of the...1. Mesa Diode Fabrication A small piece was cut from the edge of the InP/InP solar cell ---;fr .12-1) I back contact was protected by photoresist. On...1~~~~ A,,).’,**** LLS - .* .’ ~*Ii* En - in - C *- -**0:; iU.)~ ILI Y a.E - CU CU tnJn ~c~C"+ m 00 -~4 CD J - -4i - - Ln cI- C2- El4 wi -r Lf

Structural investigation of MF, RF and DC sputtered Mo thin films for backside photovoltaic electrode

NASA Astrophysics Data System (ADS)

Małek, Anna K.; Marszałek, Konstanty W.; Rydosz, Artur M.

2016-12-01

Recently photovoltaics attracts much attention of research and industry. The multidirectional studies are carried out in order to improve solar cells performance, the innovative materials are still searched and existing materials and technology are optimized. In the multilayer structure of CIGS solar cells molybdenum (Mo) layer is used as a back contact. Mo layers meet all requirements for back side electrode: low resistivity, good adhesion to the substrate, high optical reflection in the visible range, columnar structure for Na ions diffusion, formation of an ohmic contact with the ptype CIGS absorber layer, and high stability during the corrosive selenization process. The high adhesion to the substrate and low resistivity in single Mo layer is difficult to be achieved because both properties depend on the deposition parameters, particularly on working gas pressure. Therefore Mo bilayers are applied as a back contact for CIGS solar cells. In this work the Mo layers were deposited by medium frequency sputtering at different process parameters. The effect of substrate temperature within the range of 50°C-200°C and working gas pressure from 0.7 mTorr to 7 mTorr on crystalline structure of Mo layers was studied.

Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications

NASA Astrophysics Data System (ADS)

Hara, Kosuke O.; Nakagawa, Yoshihiko; Suemasu, Takashi; Usami, Noritaka

2015-07-01

We have realized BaSi2 films by a simple vacuum evaporation technique for solar cell applications. X-ray diffraction analysis shows that single-phase BaSi2 films are formed on alkali-free glass substrates at 500 and 600 °C while impurity phases coexist on quartz or soda-lime glass substrates or at a substrate temperature of 400 °C. The mechanism of film growth is discussed by analyzing the residue on the evaporation boat. An issue on the fabricated films is cracking due to thermal mismatch, as observed by secondary electron microscopy. Optical characterizations by transmittance and reflectance spectroscopy show that the evaporated films have high absorption coefficients, reaching 2 × 104 cm-1 for a photon energy of 1.5 eV, and have indirect absorption edges of 1.14-1.21 eV, which are suitable for solar cells. The microwave-detected photoconductivity decay measurement reveals that the carrier lifetime is approximately 0.027 µs, corresponding to the diffusion length of 0.84 µm, which suggests the potential effective usage of photoexcited carriers.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Development of Titanium-Sputtered Anodized Aluminum Substrates for Dye-Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Côté, Marie-Pier; Parsi Benehkohal, Nima; Alpay, Neslihan; Demopoulos, George P.; Brochu, Mathieu

2014-12-01

In this study, anodized aluminum coupons are sputtered with titanium and successfully demonstrated as dye-sensitized solar cell (DSC) electrode substrates in both anode [back-illumination (BI)] and cathode [front-illumination (FI)] configurations. The FI DSCs were found to be significantly more efficient than the BI devices registering an average efficiency of 5.7 vs 2.6 pct. By comparison, the efficiency of benchmark cells built with fluorine-tin oxide-glass was 6.7 and 4.6 pct, respectively. The thickness of the titanium-sputtered film was varied from 0.85 to 1.1 μm with the latter providing a better average efficiency when used as a counter electrode. According to preliminary stability testing, the Ti-sputtered anodized aluminum-based DSC devices exhibited a significant reduction of their efficiency over a period of 10 days that was partly attributed to triiodide redox electrolyte reaction with the aluminum substrate. This points to the need for optimization of the sputtered-titanium coating microstructure in order to completely isolate the aluminum substrate from the liquid electrolyte.

Low thermal budget, photonic-cured compact TiO 2 layers for high-efficiency perovskite solar cells

DOE PAGES

Das, Sanjib; Gu, Gong; Joshi, Pooran C.; ...

2016-05-25

Rapid advances in organometallic trihalide perovskite solar cells (PSCs) have positioned them to be one of the leading next generation photovoltaic technologies. However, most of the high-performance PSCs, particularly those using compact TiO 2 as an electron transport layer, require a high-temperature sintering step, which is not compatible with flexible polymer-based substrates. Considering the materials of interest for PSCs and corresponding device configurations, it is technologically imperative to fabricate high-efficiency cells at low thermal budget so that they can be realized on low-temperature plastic substrates. In this paper, we report on a new photonic curing technique that produces crystalline anatase-phasemore » TiO 2 films on indium tin oxide-coated glass and flexible polyethylene terephthalate (PET) substrates. Finally, the planar PSCs, using photonic-cured TiO 2 films, exhibit PCEs as high as 15.0% and 11.2% on glass and flexible PET substrates, respectively, comparable to the device performance of PSCs incorporating furnace annealed TiO 2 films.« less

Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

NASA Astrophysics Data System (ADS)

Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

2017-05-01

This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

Investigation of Low Cost Substrate Approaches for III-V Solar Cells

NASA Astrophysics Data System (ADS)

Lichty, Marlene Lydia

With the need for cleaner energy sources, which can displace fossil fuel, the solar cell industry is of particular interest due to the abundancy of the Sun. Silicon currently dominates terrestrial applications, but efficiency improvements have saturated. III-V based solar cells have reported the highest efficiencies, however, high costs due to substrates and fabrication processes have limited these devices to specialty applications, such as space. In order to reduce the cost associated with fabricating III-V semiconductor substrate material, two different approaches were taken in this work with a particular focus on making III-Vs more applicable outside of specialty applications, including InP, InAsnd Ge. Typical material characterization techniques were used to analyze the samples and processes studied in this thesis. The first process examined was the direct epitaxial growth of III-V materials by MOCVD on cheaper substrates. More specifically, the direct growth of InP and InAs on metal foils. A growth time study and surface coverage analysis was performed for the growth of InP. A characterization study was then conducted on the second process, the aluminum- induced crystallization of germanium to determine the effects this process had on the surface. Crystalline InP, InAs and Ge were successfully characterized in this work, and show promise for use in cheaper III-V alternatives to terrestrial energy solutions.

A micro-sized bio-solar cell for self-sustaining power generation.

PubMed

Lee, Hankeun; Choi, Seokheun

2015-01-21

Self-sustainable energy sources are essential for a wide array of wireless applications deployed in remote field locations. Due to their self-assembling and self-repairing properties, "biological solar (bio-solar) cells" are recently gaining attention for those applications. The bio-solar cell can continuously generate electricity from microbial photosynthetic and respiratory activities under day-night cycles. Despite the vast potential and promise of bio-solar cells, they, however, have not yet successfully been translated into commercial applications, as they possess persistent performance limitations and scale-up bottlenecks. Here, we report an entirely self-sustainable and scalable microliter-sized bio-solar cell with significant power enhancement by maximizing solar energy capture, bacterial attachment, and air bubble volume in well-controlled microchambers. The bio-solar cell has a ~300 μL single chamber defined by laser-machined poly(methyl methacrylate) (PMMA) substrates and it uses an air cathode to allow freely available oxygen to act as an electron acceptor. We generated a maximum power density of 0.9 mW m(-2) through photosynthetic reactions of cyanobacteria, Synechocystis sp. PCC 6803, which is the highest power density among all micro-sized bio-solar cells.

Advanced solar panel designs

NASA Technical Reports Server (NTRS)

Ralph, E. L.; Linder, E. B.

1996-01-01

Solar panel designs that utilize new high-efficiency solar cells and lightweight rigid panel technologies are described. The resulting designs increase the specific power (W/kg) achievable in the near-term and are well suited to meet the demands of higher performance small satellites (smallsats). Advanced solar panel designs have been developed and demonstrated on two NASA SBIR contracts at Applied Solar. The first used 19% efficient, large area (5.5 cm x 6.5 cm) GaAs/Ge solar cells with a lightweight rigid graphite epoxy isogrid substrate configuration. A 1,445 cm(exp 2) coupon was fabricated and tested to demonstrate 60 W/kg with a high potential of achieving 80 W/kg. The second panel design used new 22% efficiency, dual junction GaInP2/GaAs/Ge solar cells combined with a lightweight aluminum core/graphite fiber mesh facesheet substrate. A 1,445 cm(exp 2) coupon was fabricated and tested to demonstrate 105 W/kg with the potential of achieving 115 W/kg. This paper will address the construction details for the GaAs/isogrid and dual-junction GaAs/carbon mesh panel configurations. These are ultimately sized to provide 75 Watts and 119 Watts respectively for smallsats or may be used as modular building blocks for larger systems. GaAs/isogrid and dual-junction GaAs/carbon mesh coupons have been fabricated and tested to successfully demonstrate critical performance parameters and results are also provided here.

Improved performance of flexible amorphous silicon solar cells with silver nanowires

NASA Astrophysics Data System (ADS)

Chen, Y. R.; Li, Z. Q.; Chen, X. H.; Liu, C.; Ye, X. J.; Wang, Z. B.; Sun, Z.; Huang, S. M.

2012-12-01

A novel hybrid electrode structure using Ag nanowires (NWs) to create surface plasmons to enhance light trapping is designed and applied on the front surface of hydrogenated amorphous silicon (a-Si:H) solar cells on steel substrates, targeting broad-band absorption enhancements. Ag NWs were synthesized using a soft and self-seeding process. The produced Ag NWs were deposited on indium tin oxide (ITO) glass substrates or the ITO layers of the as-prepared flexible a-Si:H solar cells to form Ag NW-ITO hybrid electrodes. The Ag NW-ITO hybrid electrodes were optimized to achieve maximum optical enhancement using surface plasmons and obtain good electrical contacts in cells. Finite-element electromagnetic simulations confirmed that the presence of the Ag NWs resulted in increased electromagnetic fields within the a-Si:H layer. Compared to the cell with conventional ITO electrode, the measured quantum efficiency of the best performing a-Si:H cell shows an obvious enhancement in the wavelength range from 330 nm to 600 nm. The cell based on the optimized Ag NW-ITO demonstrates an increase about 4% in short-circuit current density and over 6% in power conversion efficiency under AM 1.5 illumination.

Corrosion resistant solar mirror

DOEpatents

Medwick, Paul A.; Abbott, Edward E.

2016-07-19

A reflective article includes a transparent substrate having a first major surface and a second major surface. A base coat is formed over at least a portion of the second major surface. A primary reflective coating having at least one metallic layer is formed over at least a portion of the base coat. A protective coating is formed over at least a portion of the primary reflective coating. The article further includes a solar cell and an anode, with the solar cell connected to the metallic layer and the anode.

Multichannel Spectroscopic Ellipsometry for CdTe Photovoltaics: from Materials and Interfaces to Solar Cells

NASA Astrophysics Data System (ADS)

Koirala, Prakash

Spectroscopic ellipsometry (SE) in the mid-infrared to ultraviolet range has been implemented in order to develop and evaluate optimization procedures for CdTe solar cells at the different stages of fabrication. In this dissertation research, real time SE (RT-SE) has been applied during the fabrication of the as-deposited CdS/CdTe solar cell. Two areas of background research were addressed before undertaking the challenging RT-SE analysis procedures. First, optical functions were parameterized versus temperature for the glass substrate and its overlayers, including three different SnO2 layers. This database has applications not only for RT-SE analysis but also for on-line monitoring of the coated glass itself at elevated temperature. Second, post-deposition modifications of substrate have been studied by infrared spectroscopic ellipsometry (IR-SE) prior to the RT-SE analysis in order to evaluate the need for such modification in the analysis. With support from these background studies, RT-SE has been implemented in analyses of the evolution of the thin film structural properties during sputter deposition of polycrystalline CdS/CdTe solar cells on the transparent conducting oxide (TCO) coated glass substrates. The real time optical spectra collected during CdS/CdTe deposition were analyzed using the optical property database for all substrate components as a function of measurement temperature. RT-SE enables characterization of the filling process of the surface roughness modulations on the top-most SnO2 substrate layer, commonly referred to as the high resistivity transparent (HRT) layer. In this filling process, the optical properties of this surface layer are modified in accordance with an effective medium theory. In addition to providing information on interface formation to the substrate during film growth, RT-SE also provides information on the bulk layer CdS growth, its surface roughness evolution, as well as overlying CdTe interface formation and bulk layer growth. Information from RT-SE at a single point during solar cell stack deposition assists in the development of a model that has been used for mapping the properties of the completed cell stack, which can then be correlated with device performance. Independent non-uniformities in the layers over the full area of the cell stack enable optimization of cell performance combinatorially. The polycrystalline CdS/CdTe thin-film solar cell in the superstrate configuration has been studied by SE using glass side illumination whereby the single reflection from the glass/film-stack interface is collected whereas that from the ambient/glass interface and those from multiple glass/film-stack reflections are rejected. The SE data analysis applies an optical model consisting of a multilayer stack with bulk and interface layers. The dielectric functions epsilonfor the solar cell component materials were obtained by variable-angle and in-situ SE. Variability in the properties of the materials are introduced through free parameters in analytical expressions for the dielectric functions. In the SE analysis of the complete cell, a step-wise procedure ranks all free parameters of the model, including thicknesses and those defining the spectra in epsilon, according to their ability to reduce the root-mean-square deviation between simulated and measured SE spectra. The results for the best fit thicknesses compare well with electron microscopy. From the optical model, including all best-fit parameters, the solar cell quantum efficiency (QE) can be simulated without free parameters, and comparisons with QE measurements have enabled the identification of losses. The capabilities have wide applications in off-line photovoltaic module mapping and in-line monitoring of coated glass at intermediate stages of production. Mapping spectroscopic ellipsometry (M-SE) has been applied in this dissertation research as an optimization procedure for polycrystalline CdS/CdTe solar cell fabrication on TCO coated glass superstrates. During fabrication of these solar cells, the structure undergoes key processing steps after the sputter-deposition of the CdS/CdTe. These steps include CdCl2 treatment of the CdTe layer and subsequent deposition of ultrathin Cu. Additional steps involve final metal back contact layer deposition and an anneal for Cu diffusion that completes the device. In this study, we have fabricated cells with variable absorber thicknesses, ranging from 0.5 to 2.5 mum, and variable CdCl2 treatment times, ranging from 5 to 30 min. Because both CdS window and Cu back contact layers are critical for determining device performance, the ability to characterize their deposition processes and determine the resulting process-property-performance relationships is important for device optimization. We have applied M-SE to map the effective thickness (volume/area) of the CdS and Cu films over 15 cm x 15 cm substrates prior to the fabrication of 16 x 16 arrays of dot cells. We report correlations of cell performance parameters with the CdCl2 treatment time and with the effective thicknesses from M-SE analysis. We demonstrate that correlations between optical/structural parameters extracted from M-SE analysis and device performance parameters facilitate process optimization. (Abstract shortened by ProQuest.).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Growth of KOH etched AZO nanorods and investigation of its back scattering effect in thin film a-Si solar cell

NASA Astrophysics Data System (ADS)

Sharma, Jayasree Roy; Mitra, Suchismita; Ghosh, Hemanta; Das, Gourab; Bose, Sukanta; Mandal, Sourav; Mukhopadhyay, Sumita; Saha, Hiranmay; Barua, A. K.

2018-02-01

In order to increase the stabilized efficiencies of thin film silicon (TFS) solar cells it is necessary to use better light management techniques. Texturization by etching of sputtered aluminum doped zinc oxide (Al:ZnO or AZO) films has opened up a variety of promises to optimize light trapping schemes. RF sputtered AZO film has been etched by potassium hydroxide (KOH). A systematic study of etching conditions such as etchant concentration, etching time, temperature management etc. have been performed in search of improved electrical and optical performances of the films. The change in etching conditions has exhibited a noticeable effect on the structure of AZO films for which the light trapping effect differs. After optimizing the etching conditions, nanorods have been found on the substrate. Hence, nanorods have been developed only by chemical etching, rather than the conventional development method (hydrothermal method, sol-gel method, electrolysis method etc.). The optimized etched substrate has 82% transmittance, moderate haze in the visible range and sheet resistance ∼13 (Ω/□). The developed nanorods (optimized etched substrate) provide better light trapping within the cell as the optical path length has been increased by using the nanorods. This provides an effect on carrier collection as well as the efficiency in a-Si solar cells. Finite difference time domain (FDTD) simulations have been performed to observe the light trapping by AZO nanorods formed on sputtered AZO films. For a p-i-n solar cell developed on AZO nanorods coated with sputtered AZO films, it has been found through simulations that, the incident light is back scattered into the absorbing layer, leading to an increase in photogenerated current and hence higher efficiency. It has been found that, the light that passes through the nanorods is not getting absorbed and maximum amount of light is back scattered towards the solar cell.

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Development of New Front Side Metallization Method of Aluminum Electroplating for Silicon Solar Cell

NASA Astrophysics Data System (ADS)

Willis, Megan D.

In this thesis, the methods of aluminum electroplating in an ionic liquid for silicon solar cell front side metallization were studied. It focused on replacing the current silver screen printing with an alternative metallization technology using a low-cost Earth-abundant metal for mass production, due to the high cost and limited availability of silver. A conventional aluminum electroplating method was employed for silicon solar cells fabrication on both p-type and n-type substrates. The highest efficiency of 17.9% was achieved in the n-type solar cell with a rear junction, which is comparable to that of the same structure cell with screen printed silver electrodes from industrial production lines. It also showed better spiking resistant performance than the common structure p-type solar cell. Further efforts were put on the development of a novel light-induced plating of aluminum technique. The aluminum was deposited directly on a silicon substrate without the assistance of a conductive seed layer, thus simplified and reduced the process cost. The plated aluminum has good adhesion to the silicon surface with the resistivity as low as 4x10-6 Ω-cm. A new demo tool was designed and set up for the light-induced plating experiment, aiming to utilize this technique in large-size solar cells fabrication and mass production. Besides the metallization methods, a comprehensive sensitivity analysis for the efficiency dispersion in the production of crystalline-Si solar cells was presented based on numerical simulations. Temperature variation in the diffusion furnace was the most significant cause of the efficiency dispersion. It was concluded that a narrow efficiency range of +/-0.5% absolute is achievable if the emitter diffusion temperature is confined to a 13°C window, while other cell parameters vary within their normal windows. Possible methods to minimize temperature variation in emitter diffusion were proposed.

Space Station Freedom solar array design development

NASA Technical Reports Server (NTRS)

Winslow, Cindy; Bilger, Kevin; Baraona, Cosmo

1989-01-01

The Space Station Freedom solar array program is required to provide a 75-kW power module that uses eight solar array (SA) wings over a four-year period in low earth orbit (LEO). Each wing will be capable of providing 23.4 kW at the 4-yr design point. The design of flexible-substrate SAs that must survive exposure to the space environment, including atomic oxygen, for an operating life of fifteen years is discussed. The tradeoff study and development areas being investigated include solar cell module size, solar cell weld pads, panel stiffener frames, materials inherently resistant to atomic oxygen, and weight reduction design alternatives.

Glass fiber reinforced concrete for terrestrial photovoltaic arrays

NASA Technical Reports Server (NTRS)

Maxwell, H.

1979-01-01

The use of glass-fiber-reinforced concrete (GRC) as a low-cost structural substrate for terrestrial solar cell arrays is discussed. The properties and fabrication of glass-reinforced concrete structures are considered, and a preliminary design for a laminated solar cell assembly built on a GRC substrate is presented. A total cost for such a photovoltaic module, composed of a Korad acrylic plastic film front cover, an aluminum foil back cover, an ethylene/vinyl acetate pottant/adhesive and a cotton fabric electrical isolator in addition to the GRC substrate, of $9.42/sq m is projected, which is less than the $11.00/sq m cost goal set by the Department of Energy. Preliminary evaluations are concluded to have shown the design capabilities and cost effectiveness of GRC; however, its potential for automated mass production has yet to be evaluated.

Perovskite solar cells in N-I-P structure with four slot-die-coated layers

PubMed Central

Burkitt, Daniel; Searle, Justin

2018-01-01

The fabrication of perovskite solar cells in an N-I-P structure with compact titanium dioxide blocking, mesoporous titanium dioxide scaffold, single-step perovskite and hole-transport layers deposited using the slot-die coating technique is reported. Devices on fluorine-doped tin oxide-coated glass substrates with evaporated gold top contacts and four slot-die-coated layers are demonstrated, and best cells reach stabilized power conversion efficiencies of 7%. This work demonstrates the suitability of slot-die coating for the production of layers within this perovskite solar cell stack and the potential to transfer to large area and roll-to-roll manufacturing processes. PMID:29892402

Bulk heterojunction perovskite solar cells based on room temperature deposited hole-blocking layer: Suppressed hysteresis and flexible photovoltaic application

NASA Astrophysics Data System (ADS)

Chen, Zhiliang; Yang, Guang; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Ma, Junjie; Wang, Hao; Fang, Guojia

2017-05-01

Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C61-butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates, respectively.

Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

PubMed Central

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Park, Won-Kyu; Lee, Jaejin

2017-01-01

Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-type Ge emitter layer which is epitaxially grown by MOCVD using isobutylgermane. In situ epitaxial surface passivation is employed using an InGaP layer to avoid high surface recombination rates and Fermi level pinning. High quality n-ohmic contact is realized by protecting the top contact area during the nanopillar patterning. The short circuit current density and the power conversion efficiency of the Ge nanopillar solar cell are demonstrated to be improved up to 18 and 30%, respectively, compared to those of the Ge solar cell with a planar surface. PMID:28209964

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peer, Akshit; Biswas, Rana; Park, Joong -Mok

Here, we demonstrate enhanced absorption in solar cells and enhanced light emission in OLEDs by light interaction with a periodically structured microlens array. We simulate n-i-p perovskite solar cells with a microlens at the air-glass interface, with rigorous scattering matrix simulations. The microlens focuses light in nanoscale regions within the absorber layer enhancing the solar cell. Optimal period of ~700 nm and microlens height of ~800-1000 nm, provides absorption (photocurrent) enhancement of 6% (6.3%). An external polymer microlens array on the air-glass side of the OLED generates experimental and theoretical enhancements >100%, by outcoupling trapped modes in the glass substrate.

Trench process and structure for backside contact solar cells with polysilicon doped regions

DOEpatents

De Ceuster, Denis; Cousins, Peter John; Smith, David D

2014-03-18

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Trench process and structure for backside contact solar cells with polysilicon doped regions

DOEpatents

De Ceuster, Denis; Cousins, Peter John; Smith, David D

2013-05-28

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Trench process and structure for backside contact solar cells with polysilicon doped regions

DOEpatents

De Ceuster, Denis; Cousins, Peter John; Smith, David D.

2010-12-14

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Method for forming a solar array strip

NASA Technical Reports Server (NTRS)

Mueller, R. I.; Yasui, R. K. (Inventor)

1979-01-01

A flexible solar array strip is formed by a method which lends itself to automatic production techniques. Solder pads are deposited on printed circuitry deposited on a flexible structure. The resultant substrate is stored on a drum from which it is withdrawn and incrementally advanced along a linear path. Solderless solar cells are serially transported into engagement with the pads which are then heated in order to attach the cells to the circuitry. Excess flux is cleaned from the cells which are encapsulated in a protective coating. The resultant array is then spirally wound on a drum.

Method of fabricating a back-contact solar cell and device thereof

DOEpatents

Li, Bo; Smith, David; Cousins, Peter

2014-07-29

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Method of fabricating a back-contact solar cell and device thereof

DOEpatents

Li, Bo; Smith, David; Cousins, Peter

2016-08-02

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Studies of silicon PN junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1975-01-01

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhaoying; Zheng, Xiantong; Li, Zhilong

2016-08-08

We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.

Recent advances in the ITO/InP solar cell

NASA Technical Reports Server (NTRS)

Gessert, T. A.; Li, X.; Wanlass, M. W.; Coutts, T. J.

1991-01-01

It was demonstrated that Indium Tin Oxide (ITO)/InP solar cells can now be made on as-received p(-) bulk substrates which are of nearly equal quality to those which could previously only be made on epitaxially grown p(-) InP base layers. Although this advancement is due in part to both increases in substrate quality and a better understanding of back contact formation, it appears that the passivation/compensation effects resulting from having H2 in the sputtering gas tends to reduce significantly the performance differences previously observed between these two substrates. It is shown that since high efficiency ITO/InP cells can be made from as-received substrates, and since the type conversion process is not highly spatially dependent, large area ITO/InP cells (4 sq cm) with efficiencies approaching 17 percent (Global) can be made. Furthermore, the measured open circuit voltages (V sub OC) and quantum efficiencies (QEs) from these large cells suggest that, when they are processed using optimum grid designs, the efficiencies will be nearly equal to that of the smaller cells thus far produced. It has been shown, through comparative experiments involving ITO/InP and IO/InP cells, that Sn may not be the major cause of type conversion of the InP surface and thus further implies that the ITO may not be an essential element in this type of device. Specifically, very efficient photovoltaic solar cells were made by sputtering (Sn free) In2O3 showing that type conversion and subsequent junction formation will occur even in the absence of the sputtered SN species. The result suggests that sputter damage may indeed be the important mechanism(s) of type conversion. Finally, an initial study of the stability of the ITO/InP cell done over the course of about one year has indicated that the J(sub SC) (short circuit current) and the fill factor (FF) are measurably stable within experimental certainty.

Future mission opportunities and requirements for advanced space photovoltaic energy conversion technology

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1990-01-01

The variety of potential future missions under consideration by NASA will impose a broad range of requirements on space solar arrays, and mandates the development of new solar cells which can offer a wide range of capabilities to mission planners. Major advances in performance have recently been achieved at several laboratories in a variety of solar cell types. Many of those recent advances are reviewed, the areas are examined where possible improvements are yet to be made, and the requirements are discussed that must be met by advanced solar cell if they are to be used in space. The solar cells of interest include single and multiple junction cells which are fabricated from single crystal, polycrystalline and amorphous materials. Single crystal cells on foreign substrates, thin film single crystal cells on superstrates, and multiple junction cells which are either mechanically stacked, monolithically grown, or hybrid structures incorporating both techniques are discussed. Advanced concentrator array technology for space applications is described, and the status of thin film, flexible solar array blanket technology is reported.

Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

PubMed

Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

2017-11-01

Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Profilometry of thin films on rough substrates by Raman spectroscopy

PubMed Central

Ledinský, Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbühler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf , Stefaan; Ballif , Christophe; Fejfar, Antonín

2016-01-01

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2. PMID:27922033

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, Ajeet; Chen, Zhizhang; Doshi, Parag

1996-01-01

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Analysis of epitaxial drift field N on P silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.; Brandhorst, H. W., Jr.

1976-01-01

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Low-temperature fabrication of dye-sensitized solar cells by transfer of composite porous layers

NASA Astrophysics Data System (ADS)

Dürr, Michael; Schmid, Andreas; Obermaier, Markus; Rosselli, Silvia; Yasuda, Akio; Nelles, Gabriele

2005-08-01

Dye-sensitized solar cells have established themselves as a potential low-cost alternative to conventional solar cells owing to their remarkably high power-conversion efficiency combined with `low-tech' fabrication processes. As a further advantage, the active layers consisting of nanoporous TiO2 are only some tens of micrometres thick and are therefore in principle suited for flexible applications. However, typical flexible plastic substrates cannot withstand the process temperatures of up to 500 ∘C commonly used for sintering the TiO2 nanoparticles together. Even though some promising routes for low-temperature sintering have been proposed, those layers cannot compete as regards electrical properties with layers obtained with the standard high-temperature process. Here we show that by a lift-off technique, presintered porous layers can be transferred to an arbitrary second substrate, and the original electrical properties of the transferred porous layers are maintained. The transfer process is greatly assisted by the application of composite layers comprising nanoparticles and nanorods.

Heuristic method of fabricating counter electrodes in dye-sensitized solar cells based on a PEDOT:PSS layer as a catalytic material

NASA Astrophysics Data System (ADS)

Edalati, Sh; Houshangi far, A.; Torabi, N.; Baneshi, Z.; Behjat, A.

2017-02-01

Poly(3,4-ethylendioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a fluoride-doped tin oxide glass substrate using a heuristic method to fabricate platinum-free counter electrodes for dye-sensitized solar cells (DSSCs). In this heuristic method a thin layer of PEDOT:PPS is obtained by spin coating the PEDOT:PSS on a Cu substrate and then removing the substrate with FeCl3. The characteristics of the deposited PEDOT:PSS were studied by energy dispersive x-ray analysis and scanning electron microscopy, which revealed the micro-electronic specifications of the cathode. The aforementioned DSSCs exhibited a solar conversion efficiency of 3.90%, which is far higher than that of DSSCs with pure PEDOT:PSS (1.89%). This enhancement is attributed not only to the micro-electronic specifications but also to the HNO3 treatment through our heuristic method. The results of cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and Tafel polarization plots show the modified cathode has a dual function, including excellent conductivity and electrocatalytic activity for iodine reduction.

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.

2016-11-21

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

Optimization of imprintable nanostructured a-Si solar cells: FDTD study.

PubMed

Fisker, Christian; Pedersen, Thomas Garm

2013-03-11

We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

Thin-Film Solar Array Earth Orbit Mission Applicability Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Raffaelle, Ryne P.

2002-01-01

This is a preliminary assessment of the applicability and spacecraft-level impact of using very lightweight thin-film solar arrays with relatively large deployed areas for representative Earth orbiting missions. The most and least attractive features of thin-film solar arrays are briefly discussed. A simple calculation is then presented illustrating that from a solar array alone mass perspective, larger arrays with less efficient but lighter thin-film solar cells can weigh less than smaller arrays with more efficient but heavier crystalline cells. However, a proper spacecraft-level systems assessment must take into account the additional mass associated with solar array deployed area: the propellant needed to desaturate the momentum accumulated from area-related disturbance torques and to perform aerodynamic drag makeup reboost. The results for such an assessment are presented for a representative low Earth orbit (LEO) mission, as a function of altitude and mission life, and a geostationary Earth orbit (GEO) mission. Discussion of the results includes a list of specific mission types most likely to benefit from using thin-film arrays. NASA Glenn's low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is also briefly discussed to provide a perspective on one approach to achieving this enabling technology. The paper concludes with a list of issues to be addressed prior to use of thin-film solar arrays in space and the observation that with their unique characteristics, very lightweight arrays using efficient, thin-film cells on flexible substrates may become the best array option for a subset of Earth orbiting missions.

The effect of Be and Cr electrode deposition rate on the performance of MIS solar cells

NASA Astrophysics Data System (ADS)

Moharram, A. H.; Panayotatos, P.; Yeh, J. L.; Lalevic, B.

1985-07-01

An experimental study has been performed on MIS solar cells with Be, Cr and layered Cr-Be electrodes on single crystal Si, Wacker and Monsanto poly-Si substrates. Electrical characterization in the dark and under illumination was correlated to X-ray and Auger spectroscopy results. It was found that the electrode deposition rate directly affects the oxygen content of the electrodes for all metal-substrate configurations. This oxygen is believed to originate from the deposition ambient as well as from the SiO2 layer. In the case of cells with Cr and layered Cr-Be electrodes oxygen acts to reduce the electrode work function (thus increasing the open-circuit voltage) in direct proportion to the relative content of oxygen to chromium.

The silicon on dust substrate path to make solar cells directly from a gaseous feedstock

NASA Astrophysics Data System (ADS)

Serra, J M; Pinto, C R; Silva, J A; Brito, M C; Maia Alves, J; Vallêra, A M

2009-04-01

In this paper, we present a silicon on dust substrate (SDS) process, a new method for the growth of silicon ribbons. As a demonstration of the concept, we also present results on solar cells made of these new silicon ribbons. SDS ribbons were obtained directly from a gaseous feedstock by a fast CVD step using silane. The resulting self-supported intrinsic ribbons were microcrystalline and porous. To make these ribbon films suitable for photovoltaic applications, a novel recrystallization with an in situ doping step was developed. To this purpose, the ribbons were sprayed with boric acid and then recrystallized by float zone melting. Simple solar cells were prepared by employing: aluminium back contacts, Ti/Pd/Ag front grid contacts, with no anti-reflective coating, doping optimization, passivation or gettering. The 1-sun I-V characteristics of the cells were: Voc ~ 530 mV and Jsc ~ 24 mA cm-2. The minority carrier diffusion length obtained from a spectral response at long wavelengths gave values of Ln ~ 70 µm.

Degradation of small-molecule organic solar cells

NASA Astrophysics Data System (ADS)

Song, Q. L.; Wang, M. L.; Obbard, E. G.; Sun, X. Y.; Ding, X. M.; Hou, X. Y.; Li, C. M.

2006-12-01

Small-molecule organic solar cells with a structure of indium tin oxide (ITO)tris-8-hydroxy-quinolinato aluminum (Alq3) (2nm)fullerene (C60) (40nm)\\copper phthalocyanine (CuPc) (32nm)Au (40nm) were fabricated. The shelf lifetime of unencapsulated devices was over 1500h, and the power conversion efficiency reached 0.76% under AM1.5G (air mass 1.5 global) 75mW/cm2. The long lifetime was attributed to the inverted structure compared to the conventional ITO CuPcC60bufferAl structure since the former could effectively protect C60 from the diffusion of oxygen and modify interfacial electrical properties. The introduction of a 2nm Alq3 layer into the cells enhanced the power conversion efficiency by more than 20 times. The presence of the thin Alq3 film on the ITO substrate lowered the substrate work function and hence increased the electric field in the organic layers, which was beneficial to the collection of free carriers. The reasons for the degradation of such kind of organic solar cells are analyzed in detail.

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

NASA Technical Reports Server (NTRS)

Negley, Gerald H.; Rhoads, Sandra L.; Terranova, Nancy E.; Mcneely, James B.; Barnett, Allen M.

1989-01-01

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Advances in all-sputtered CdTe solar cells on flexible substrates

NASA Astrophysics Data System (ADS)

Wieland, Kristopher; Mahabaduge, Hasitha; Vasko, Anthony; Compaan, Alvin

2010-03-01

The University of Toledo II-VI semiconductor group has developed magnetron sputtering (MS) for the deposition of thin films of CdS, CdTe, and related materials for photovoltaic applications. On glass superstrates, we have reached air mass 1.5 efficiencies of 14%.[1] Recently we have studied the use of MS for the fabrication of thin-film CdS/CdTe cells on flexible polyimide superstrates. This takes advantage of the high film quality that can be achieved at substrate temperatures below 300 C when RF MS is used. Our recent CdS/CdTe solar cells have reached 10.5% on flexible polyimide substrates. [2] This all-sputtered cell (except for back contact) has a structure of polyimide/ZnO:Al/ZnO/CdS/CdTe/Cu/Au. The physics of this device will be discussed through the use of spectral quantum efficiency and current-voltage measurements as a function of CdTe layer thickness. Pathways toward further increases in device efficiencies will also be discussed. [1] Appl. Phys. Lett. 85, 684 (2004) [2] Phys. Stat. Sol. (B) 241, No. 3, 779--782 (2004)

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, P.; Sengupta, D.; CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effectmore » of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.« less

Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

NASA Astrophysics Data System (ADS)

Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

2017-12-01

Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

One-Dimensional Fast Transient Simulator for Modeling Cadmium Sulfide/Cadmium Telluride Solar Cells

NASA Astrophysics Data System (ADS)

Guo, Da

Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary alternative energy sources to fossil fuel. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement. Simulation of various structures and materials of solar cells provides a deeper understanding of device operation and ways to improve their efficiency. Over the last two decades, polycrystalline thin-film Cadmium-Sulfide and Cadmium-Telluride (CdS/CdTe) solar cells fabricated on glass substrates have been considered as one of the most promising candidate in the photovoltaic technologies, for their similar efficiency and low costs when compared to traditional silicon-based solar cells. In this work a fast one dimensional time-dependent/steady-state drift-diffusion simulator, accelerated by adaptive non-uniform mesh and automatic time-step control, for modeling solar cells has been developed and has been used to simulate a CdS/CdTe solar cell. These models are used to reproduce transients of carrier transport in response to step-function signals of different bias and varied light intensity. The time-step control models are also used to help convergence in steady-state simulations where constrained material constants, such as carrier lifetimes in the order of nanosecond and carrier mobility in the order of 100 cm2/Vs, must be applied.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Effect of TiO{sub 2} thickness on nanocomposited aligned ZnO nanorod/TiO{sub 2} for dye-sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saurdi, I., E-mail: saurdy788@gmail.com; Ishak, A.; UiTM Sarawak Kampus Kota Samarahan Jalan Meranek, Sarawak

2016-07-06

The TiO{sub 2} films were deposited on glass substrate at different thicknesses with different deposition frequencies (1, 2, 3 and 4 times) using spin coating technique and their structural properties were investigated. Subsequently, the nanocomposited aligned ZnO nanorods and TiO{sub 2} were formed by deposited the TiO{sub 2} on top of aligned ZnO Nanorod on ITO-coated glass at different thicknesses using the same method of TiO{sub 2} deposited on glass substrate. The nanocomposited aligned ZnO nanorod/TiO{sub 2} were coated with different thicknesses of 900µm, 1815µm, 2710µm, 3620µm and ZnO without TiO{sub 2}. The dye-sensitized solar cells were fabricated from themore » nanocomposited aligned ZnO nanorod/TiO{sub 2} with thickness of 900µm, 1815µm, 2710µm and 3620µm and ZnO without TiO{sub 2} and their photovoltaic properties of the DSSCs were investigated. From the solar simulator measurement the solar energy conversion efficiency (η) of 2.543% under AM 1.5 was obtained for the ZnO nanorod/TiO{sub 2} photoanode-2710µm Dye-Sensitized solar cell.« less

Fabricating solar cells with silicon nanoparticles

DOEpatents

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Interconnnect and bonding technologies for large flexible solar arrays

NASA Technical Reports Server (NTRS)

1976-01-01

Thermocompression bonding and conductive adhesive bonding are developed and evaluated as alternate methods of joining solar cells to their interconnect assemblies. Bonding materials and process controls applicable to fabrication of large, flexible substrate solar cell arrays are studied. The primary potential use of the techniques developed is on the solar array developed by NASA/MSFC and LMSC for solar electric propulsion (SEP) and shuttle payload applications. This array is made up of flexible panels approximately 0.7 by 3.4 meters. It is required to operate in space between 0.3 and 6 AU for 5 years with limited degradation. Materials selected must be capable of enduring this space environment, including outgassing and radiation.

Printable CIGS thin film solar cells

NASA Astrophysics Data System (ADS)

Fan, Xiaojuan

2014-03-01

Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

PubMed

Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

2015-09-02

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

Design guideline for Si/organic hybrid solar cell with interdigitated back contact structure

NASA Astrophysics Data System (ADS)

Bimo Prakoso, Ari; Rusli; Li, Zeyu; Lu, Chenjin; Jiang, Changyun

2018-03-01

We study the design of Si/organic hybrid (SOH) solar cells with interdigitated back contact (IBC) structure. SOH solar cells formed between n-Si and poly(3,4-ethylenedioxythiophene): polystyrenesulphonate (PEDOT:PSS) is a promising concept that combines the excellent electronic properties of Si with the solution-based processing advantage of an organic polymer. The IBC cell structure is employed to minimize parasitic absorption losses in the organic polymer, eliminate grid shadowing losses, and allow excellent passivation of the front Si surface in one step over a large area. The influence of Si thickness, doping concentration and contact geometry are simulated in this study to optimize the performance of the SOH-IBC solar cell. We found that a high power conversion efficiency of >20% can be achieved for optimized SOH-IBC cell based on a thin c-Si substrate of 40 μm thickness.

Investigation of test methods, material properties, and processes for solar cell encapsulants

NASA Technical Reports Server (NTRS)

Willis, P. B.

1983-01-01

A study of potentially useful low cost encapsulation materials for the Flat-Plate Solar Array project is discussed. The goal is to identify, evaluate, test and recommend encapsulant materials and processes for the production of cost-effective, long life solar cell modules. Technical investigations included studies of aging and degradation of candidate encapsulation materials, continued identification of primers for durable bonding of module interfaces, continued evaluation of soil resistant treatments for the sunlit surface of the module and testing of corrosion protective coatings for use low cost mild steel substrates.

InN: A material with photovoltaic promise and challenges

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Burnham, Shawn; Doolittle, W. Alan; Cheung, Maurice; Cartwright, Alexander

2006-03-01

The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics albeit in an inherently lattice mismatched material system. For this reason, the characteristics of InN grown on (1 1 1)-oriented germanium and (0 0 0 1)-plane sapphire substrates via molecular beam epitaxy for the application of InN solar cells is described. To provide an efficient sub-cell interconnect for tandem solar cells, epitaxial Al was deposited on a germanium substrate with InN grown on this epitaxial aluminum layer. Consistent with previous results, the electrical characteristics of n-InN/p-Ge, n-InN/n-Ge, and n-InN/Al/Ge were measured and showed no rectifying behavior. As evidenced by X-ray diffraction, minute amounts of unintentional oxygen incorporation during InN growth forms a secondary phase, tentatively assigned to an indium oxynitride, InON x, phase. Photoluminescence measurements of the InN/InON x show spectral peaks at ˜0.7 and ˜3.8 eV consistent with the bulk excitonic bandgap of the two materials. Photoluminescence was also found at ˜1.7 eV and shown to be related to emission from the sapphire substrates.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Method and making group IIB metal - telluride films and solar cells

DOEpatents

Basol, Bulent M.; Kapur, Vijay K.

1990-08-21

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

High Aspect Ratio Semiconductor Heterojunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Redwing, Joan; Mallouk, Tom; Mayer, Theresa

2013-05-17

The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematicmore » and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.« less

Recyclable organic solar cells on cellulose nanocrystal substrates

Treesearch

Yinhua Zhou; Canek Fuentes-Hernandez; Talha M. Khan; Jen-Chieh Liu; James Hsu; Jae Won Shim; Amir Dindar; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2013-01-01

Solar energy is potentially the largest source of renewable energy at our disposal, but significant advances are required to make photovoltaic technologies economically viable and, from a life-cycle perspective, environmentally friendly, and consequently scalable. Cellulose nanomaterials are emerging high-value nanoparticles extracted from plants that are abundant,...

Reversible structural transformation and enhanced performance of PEDOT:PSS-based hybrid solar cells driven by light intensity.

PubMed

Thomas, Joseph Palathinkal; Srivastava, Saurabh; Zhao, Liyan; Abd-Ellah, Marwa; McGillivray, Donald; Kang, Jung Soo; Rahman, Md Anisur; Moghimi, Nafiseh; Heinig, Nina F; Leung, Kam Tong

2015-04-15

Hybrid solar cells made of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) and appropriate amounts of a cosolvent and a fluorosurfactant on planar n-type silicon substrates showed a photoconversion efficiency (PCE) of above 13%. These cells also exhibited stable, reproducible, and high external quantum efficiency (EQE) that was not sensitive to light-bias intensity (LBI). In contrast, solar cells made of pristine PSS showed low PCE and high EQE only under certain measurement conditions. The EQE was found to degrade with increasing LBI. Here we report that the LBI-sensitive variation of EQE of the low-PCE cells is related to a reversible structural transformation from a quinoid to a benzoid structure of PEDOT.

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

DOE PAGES

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; ...

2015-11-09

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less

Thermally evaporated Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, K.; Gunawan, O.; Todorov, T.; Shin, B.; Chey, S. J.; Bojarczuk, N. A.; Mitzi, D.; Guha, S.

2010-10-01

High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in the minutes. Detailed electrical analysis of the devices indicate that the performance of the devices is limited by high series resistance, a "double diode" behavior of the current voltage characteristics, and an open circuit voltage that is limited by a carrier recombination process with an activation energy below the band gap of the material.

Preparation of ZnS microdisks using chemical bath deposition and ZnS/p-Si heterojunction solar cells

NASA Astrophysics Data System (ADS)

Hsiao, Y. J.; Meen, T. H.; Ji, L. W.; Tsai, J. K.; Wu, Y. S.; Huang, C. J.

2013-10-01

The synthesis and heterojunction solar cell properties of ZnS microdisks prepared by the chemical bath deposition method were investigated. The ZnS deposited on the p-Si blanket substrate exhibits good coverage. The lower reflectance spectra were found as the thickness of the ZnS film increased. The optical absorption spectra of the 80 °C ZnS microdisk exhibited a band-gap energy of 3.4 eV and the power conversion efficiency (PCE) of the AZO/ZnS/p-Si heterojunction solar cell with a 300 nm thick ZnS film was η=2.72%.

Tetradymite layer assisted heteroepitaxial growth and applications

DOEpatents

Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

2017-08-01

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

Solar Cell Polymer Based Active Ingredients PPV and PCBM

NASA Astrophysics Data System (ADS)

Hardeli, H.; Sanjaya, H.; Resikarnila, R.; Nitami H, R.

2018-04-01

A polymer solar cell is a solar cell based on a polymer bulk heterojunction structure using the method of thin film, which can convert solar energy into electrical energy. Absorption of light is carried by active material layer PPV: PCBM. This study aims to make solar cells tandem and know the value of converting solar energy into electrical energy and increase the value of efficiency generated through morphological control, ie annealing temperature and the ratio of active layer mixture. The active layer is positioned above the PEDOT:PSS layer on ITO glass substrate. The characterization results show the surface morphology of the PPV:PCBM active layer is quite evenly at annealing temperature of 165 ° C. The result of conversion of electrical energy with a UV light source in annealing samples with temperature 165 ° C is 0.03 mA and voltage of 4.085 V with an efficiency of 2.61% and mixed ratio variation was obtained in comparison of P3HT: PCBM is 1: 3

An introduction to the Astro Edge solar array

NASA Technical Reports Server (NTRS)

Spence, B. R.; Marks, G. W.

1994-01-01

The Astro Edge solar array is a new and innovative low concentrator power generating system which has been developed for applications requiring high specific power, high stiffness, low risk, light modular construction which utilizes conventional materials and technology, and standard photovoltaic solar cells and laydown processes. Mechanisms, restraint/release devices, wiring harnesses, substrates, and support structures are designed to be simple, functional, lightweight, and modular. A brief overview of the Astro Edge solar array is discussed.

Thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.

1994-09-01

This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

Effects of proton irradiation on the performance of InP/GaAs solar cells

NASA Technical Reports Server (NTRS)

Weinberg, Irving; Swartz, C. K.; Brinker, David J.; Wilt, D. M.

1991-01-01

InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.

Electrostatically clean solar array

NASA Technical Reports Server (NTRS)

Stern, Theodore Garry (Inventor); Krumweide, Duane Eric (Inventor)

2004-01-01

Provided are methods of manufacturing an electrostatically clean solar array panel and the products resulting from the practice of these methods. The preferred method uses an array of solar cells, each with a coverglass where the method includes machining apertures into a flat, electrically conductive sheet so that each aperture is aligned with and undersized with respect to its matched coverglass sheet and thereby fashion a front side shield with apertures (FSA). The undersized portion about each aperture of the bottom side of the FSA shield is bonded to the topside portions nearest the edges of each aperture's matched coverglass. Edge clips are attached to the front side aperture shield edges with the edge clips electrically and mechanically connecting the tops of the coverglasses to the solar panel substrate. The FSA shield, edge clips and substrate edges are bonded so as to produce a conductively grounded electrostatically clean solar array panel.

NASA welding assessment program

NASA Technical Reports Server (NTRS)

Patterson, R. E.

1985-01-01

A program was conducted to demonstrate the cycle life capability of welded solar cell modules relative to a soldered solar cell module in a simulated low earth orbit thermal environment. A total of five 18-cell welded (parallel gap resistance welding) modules, three 18-cell soldered modules, and eighteen single cell samples were fabricated using 2 x 4 cm silicon solar cells from ASEC, fused silica cover glass from OCLI, silver plated Invar interconnectors, DC 93-500 adhesive, and Kapton-Kevlar-Kapton flexible substrate material. Zero degree pull strength ranged from 2.4 to 5.7 lbs for front welded contacts (40 samples), and 3.5 to 6.2 lbs for back welded contacts (40 samples). Solar cell cross sections show solid state welding on both front and rear contacts. The 18-cell welded modules have a specific power of 124 W/kg and an area power density of 142 W/sq m (both at 28 C). Three welded and one soldered module were thermal cycle tested in a thermal vacuum chamber simulating a low earth orbit thermal environment.

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Wang, W. L.; Loo, R. Y.; Rahilly, W. P.

1982-01-01

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Enhancing the Efficiency of Bulk Heterojunction Solar Cells via Templated Self Assembly

NASA Astrophysics Data System (ADS)

Pan, Cheng; Li, Hongfei; Akgun, Bulent; Satijia, Sushil; Gersappe, Dilip; Zhu, Yimei; Rafailovich, Miriam

2013-03-01

Bulk Heterojunction (BHJ) polymer solar cells are an area of intense interest due to their flexibility and relatively low cost. The mixture of polythiophene derivatives (donor) and fullerenes (acceptor) is spin coated on substrate as the active layer, and are phase-separated into interconnected domains. However, due to the disordered inner structures in the active layer, donor or acceptor domains isolated from electrodes and long path conduction, the power conversion efficiency (PCE) of BHJ solar cell is low. Therefore, morphology control in bulk heterojunction (BHJ) solar cell is considered to be critical for the power conversion efficiency (PCE). Here, we present a novel approach that introduces non-photoactive polymer that organizes the poly(3-hexylthiophene) (P3HT) into columnar phases decorated by [6,6]-phenyl C61-butyric acid methyl ester (PCBM) at the interface. This structure represents a realization of an idealized morphology of an organic solar cell, in which, both exiciton dissociation and the carrier transport are optimized leading to increased power conversion efficiency.

Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

NASA Astrophysics Data System (ADS)

Zhang, Lei; Niu, Pingjuan; Li, Yuqiang; Song, Minghui; Zhang, Jianxin; Ning, Pingfan; Chen, Peizhuan

2017-12-01

Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm2 area under the AM0 spectrum at 25 °C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%.

Strained hybrid perovskite thin films and their impact on the intrinsic stability of perovskite solar cells

PubMed Central

Zhao, Jingjing; Deng, Yehao; Wei, Haotong; Zheng, Xiaopeng; Yu, Zhenhua; Shao, Yuchuan; Shield, Jeffrey E.; Huang, Jinsong

2017-01-01

Organic-inorganic hybrid perovskite (OIHP) solar cells have achieved comparable efficiencies to those of commercial solar cells, although their instability hinders their commercialization. Although encapsulation techniques have been developed to protect OIHP solar cells from external stimuli such as moisture, oxygen, and ultraviolet light, understanding of the origin of the intrinsic instability of perovskite films is needed to improve their stability. We show that the OIHP films fabricated by existing methods are strained and that strain is caused by mismatched thermal expansion of perovskite films and substrates during the thermal annealing process. The polycrystalline films have compressive strain in the out-of-plane direction and in-plane tensile strain. The strain accelerates degradation of perovskite films under illumination, which can be explained by increased ion migration in strained OIHP films. This study points out an avenue to enhance the intrinsic stability of perovskite films and solar cells by reducing residual strain in perovskite films. PMID:29159287

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

Sol-gel derived antireflective structures for applications in silicon solar cells

NASA Astrophysics Data System (ADS)

Karasiński, Paweł; Skolik, Marcin

2016-12-01

This work presents theoretical and experimental results of antireflective coatings (ARCs) obtained for applications in silicon solar cells. ARCs were derived from sol-gel process and dip-coated using silica (SiO2) and titania (TiO2). Theoretical results were obtained using 2×2 transfer matrix calculation method. Technological process of SiO2 and TiO2 thin film fabrication as well as measurement techniques are described in this paper. Strong correlation between theoretical and experimental data is demonstrated. It is shown, that weighted average reflection from a substrate can be reduced ten times with the use of SiO2/TiO2/Si double layer ARCs, when compared to a bare silica substrate.

Ultrathin and lightweight organic solar cells with high flexibility

PubMed Central

Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

2012-01-01

Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Gallium Arsenide solar cell radiation damage experiment

NASA Technical Reports Server (NTRS)

Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

1991-01-01

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

New Thin-Film Solar Cells Compared to Normal Solar Cells

NASA Image and Video Library

1966-06-21

Adolph Spakowski, head of the Photovoltaic Fundamentals Section at the National Aeronautics and Space Administration (NASA) Lewis Research Center, illustrated the difference between conventional silicon solar cells (rear panel) and the new thin-film cells. The larger, flexible thin-film cells in the foreground were evaluated by Lewis energy conversion specialists for possible future space use. The conventional solar cells used on most spacecraft at the time were both delicate and heavy. For example, the Mariner IV spacecraft required 28,000 these solar cells for its flyby of Mars in 1964. NASA Lewis began investigating cadmium sulfide thin-film solar cells in 1961. The thin-film cells were made by heating semiconductor material until it evaporated. The vapor was then condensed onto an electricity-producing film only one-thousandth of an inch thick. The physical flexibility of the new thin-film cells allowed them to be furled, or rolled up, during launch. Spakowski led an 18-month test program at Lewis to investigate the application of cadmium sulfide semiconductors on a light metallized substrate. The new thin-film solar cells were tested in a space simulation chamber at a simulated altitude of 200 miles. Sunlight was recreated by a 5000-watt xenon light. Two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit.

Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Zhang, Chaomin

It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation during GaP epitaxial growth on Si by MBE were proposed. To achieve high performance of GaP/Si solar cells, different GaP/Si structures were designed, fabricated and compared, including GaP as a hetero-emitter, GaP as a heterojunction on the rear side, inserting passivation membrane layers at the GaP/Si interface, and GaP/wet-oxide functioning as a passivation contact. A designed of a-Si free carrier-selective contact MoOx/Si/GaP solar cells demonstrated 14.1% power conversion efficiency.

Advanced solar panel designs

NASA Technical Reports Server (NTRS)

Ralph, E. L.; Linder, E.

1995-01-01

This paper describes solar cell panel designs that utilize new hgih efficiency solar cells along with lightweight rigid panel technology. The resulting designs push the W/kg and W/sq m parameters to new high levels. These new designs are well suited to meet the demand for higher performance small satellites. This paper reports on progress made on two SBIR Phase 1 contracts. One panel design involved the use of large area (5.5 cm x 6.5 cm) GaAs/Ge solar cells of 19% efficiency combined with a lightweight rigid graphite fiber epoxy isogrid substrate configuration. A coupon (38 cm x 38 cm) was fabricated and tested which demonstrated an array specific power level of 60 W/kg with a potential of reaching 80 W/kg. The second panel design involved the use of newly developed high efficiency (22%) dual junction GaInP2/GaAs/Ge solar cells combined with an advanced lightweight rigid substrate using aluminum honeycomb core with high strength graphite fiber mesh facesheets. A coupon (38 cm x 38 cm) was fabricated and tested which demonstrated an array specific power of 105 W/kg and 230 W/sq m. This paper will address the construction details of the panels and an a analysis of the component weights. A strawman array design suitable for a typical small-sat mission is described for each of the two panel design technologies being studied. Benefits in respect to weight reduction, area reduction, and system cost reduction are analyzed and compared to conventional arrays.

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longermore » lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.« less

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

NASA Astrophysics Data System (ADS)

Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

2014-08-01

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hameed A. Naseem, Husam H. Abu-Safe

2007-02-09

The purpose of this project was to investigate metal-induced crystallization of amorphous silicon at low temperatures using excitation sources such as laser and rapid thermal annealing, as well as, electric field. Deposition of high quality crystalline silicon at low temperatures allows the use of low cost soda-lime glass and polymeric films for economically viable photovoltaic solar cells and low cost large area flat panel displays. In light of current and expected demands on Si supply due to expanding use of consumer electronic products throughout the world and the incessant demand for electric power the need for developing high grade Simore » thin films on low cost substrate becomes even more important. We used hydrogenated and un-hydrogenated amorphous silicon deposited by plasma enhanced chemical vapor deposition and sputtering techniques (both of which are extensively used in electronic and solar cell industries) to fabricate nano-crystalline, poly-crystalline (small as well as large grain), and single-crystalline (epitaxial) films at low temperatures. We demonstrated Si nanowires on flat surfaces that can be used for fabricating nanometer scale transistors. We also demonstrated lateral crystallization using Al with and without an applied electric field. These results are critical for high mobility thin film transistors (TFT) for large area display applications. Large grain silicon (~30-50 µm grain size for < 0.5 µm thick films) was demonstrated on glass substrates at low temperatures. We also demonstrated epitaxial growth of silicon on (100) Si substrates at temperatures as low as 450°C. Thin film Si solar cells are being projected as the material of choice for low cost high efficiency solar cells when properly coupled with excellent light-trapping schemes. Ar ion laser (CW) was shown to produce dendritic nanowire structures at low power whereas at higher powers yielded continuous polycrystalline films. The power density required for films in contact with Al was demonstrated to be at least two orders of magnitude lower that that reported in the literature before. Polysilicon was successfully achieved on polyimide (Kapton©) films. Thin film Si solar cells on lightweight stoable polymer offer great advantage for terrestrial and space power applications. In summary we have demonstrated through this research the viability of producing low cost nano-, poly-, and epitaxial Si material on substrates of choice for applications in economically viable environmentally friendly sustainable solar power systems. This truly enabling technology has widespread applications in multibillion dollar electronic industry and consumer products.« less

Space Station Freedom Solar Array design development

NASA Technical Reports Server (NTRS)

Winslow, Cindy; Bilger, Kevin; Baraona, Cosmo R.

1989-01-01

The Space Station Freedom Solar Array Program is required to provide a 75 kW power module that uses eight solar array (SA) wings over a four-year period in low Earth orbit (LEO). Each wing will be capable of providing 23.4 kW at the 4-year design point. Lockheed Missles and Space Company, Inc. (LMSC) is providing the flexible substrate SAs that must survive exposure to the space environment, including atomic oxygen, for an operating life of fifteen years. Trade studies and development testing, important for evolving any design to maturity, are presently underway at LMSC on the flexible solar array. The trade study and development areas being investigated include solar cell module size, solar cell weld pads, panel stiffener frames, materials inherently resistant to atomic oxygen, and weight reduction design alternatives.

Preliminary Measurements of Thin Film Solar Cells

NASA Image and Video Library

1967-06-21

George Mazaris, works with an assistant to obtain the preliminary measurements of cadmium sulfide thin-film solar cells being tested in the Space Environmental Chamber at the National Aeronautics and Space Administration (NASA) Lewis Research Center. Lewis’ Photovoltaic Fundamentals Section was investigating thin-film alternatives to the standard rigid and fragile solar cells. The cadmium sulfide semiconductors were placed in a light, metallized substrate that could be rolled or furled during launch. The main advantage of the thin-film solar cells was their reduced weight. Lewis researchers, however, were still working on improving the performance of the semiconductor. The new thin-film solar cells were tested in a space simulation chamber in the CW-6 test cell in the Engine Research Building. The chamber created a simulated altitude of 200 miles. Sunlight was simulated by a 5000-watt xenon light. Some two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit. This photograph was taken for use in a NASA recruiting publication.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

Development of technologies for welding interconnects to fifty-micron thick silicon solar cells

NASA Technical Reports Server (NTRS)

Patterson, R. E.

1982-01-01

A program was conducted to develop technologies for welding interconnects to 50 microns thick, 2 by 2 cm solar cells. The cells were characterized with respect to electrical performance, cell thickness, silver contact thickness, contact waviness, bowing, and fracture strength. Weld schedules were independently developed for each of the three cell types and were coincidentally identical. Thermal shock tests (100 cycles from 100 C to -180 C) were performed on 16 cell coupons for each cell type without any weld joint failures or electrical degradation. Three 48 cell modules (one for each cell type) were assembled with 50 microns thick cells, frosted fused silica covers, silver clad Invar interconnectors, and Kapton substrates.

Welding interconnects to 50-micron silicon solar cells

NASA Technical Reports Server (NTRS)

Patterson, R. E.; Mesch, H. G.

1983-01-01

A program was conducted to develop technologies for welding interconnects to 50-micron thick, 2 by 2 cm solar cells obtained from three suppliers. The cells were characterized with respect to electrical performance, cell thickness, silver contact thickness, contact waviness, bowing, and fracture strength. Weld schedules were independently developed for each of the three cell types and were coincidentally identical. Thermal shock tests (100 cycles from 100 deg to -180 deg C) were performed on 16-cell coupons for each cell type without any weld joint failures or electrical degradation. Three 48-cell modules (one for each cell type) were assembled with 50-micron thick cells, frosted fused silica covers, silver clad Invar interconnectors, and Kapton substrates.

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Space Station Freedom Solar Array tension mechanism development

NASA Technical Reports Server (NTRS)

Allmon, Curtis; Haugen, Bert

1994-01-01

A tension mechanism is used to apply a tension force to the Space Station Freedom Solar Array Blanket. This tension is necessary to meet the deployed frequency requirement of the array as well as maintain the flatness of the flexible substrate solar cell blanket. The mechanism underwent a series of design iterations before arriving at the final design. This paper discusses the design and testing of the mechanism.

Low temperature junction growth using hot-wire chemical vapor deposition

DOEpatents

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Coatings Would Protect Polymers Against Atomic Oxygen

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Rutledge, Sharon K.

1995-01-01

Proposed interposition of layers of silver oxide tens to hundreds of angstroms thick between polymeric substrates and overlying films helps protect substrates against chemical attack by monatomic oxygen. In original application, polymer substrate would be, sheet of polyimide supporting array of solar photovoltaic cells on spacecraft in low orbit around Earth. Concept also applicable to protection of equipment in terrestrial laboratory and industrial vacuum and plasma chambers in which monatomic oxygen present.

Compositionally Graded Absorber for Efficient and Stable Near‐Infrared‐Transparent Perovskite Solar Cells

PubMed Central

Pisoni, Stefano; Weiss, Thomas P.; Feurer, Thomas; Wäckerlin, Aneliia; Fuchs, Peter; Nishiwaki, Shiro; Zortea, Lukas; Tiwari, Ayodhya N.

2018-01-01

Abstract Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se2, CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long‐term heat/light soaking has not been demonstrated. In this study, a facile partial ion‐exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near‐infrared‐transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se2 bottom cell. Non‐encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion‐exchange to design graded perovskite solar cells with improved efficiency and stability. PMID:29593970

Compositionally Graded Absorber for Efficient and Stable Near-Infrared-Transparent Perovskite Solar Cells.

PubMed

Fu, Fan; Pisoni, Stefano; Weiss, Thomas P; Feurer, Thomas; Wäckerlin, Aneliia; Fuchs, Peter; Nishiwaki, Shiro; Zortea, Lukas; Tiwari, Ayodhya N; Buecheler, Stephan

2018-03-01

Compositional grading has been widely exploited in highly efficient Cu(In,Ga)Se 2 , CdTe, GaAs, quantum dot solar cells, and this strategy has the potential to improve the performance of emerging perovskite solar cells. However, realizing and maintaining compositionally graded perovskite absorber from solution processing is challenging. Moreover, the operational stability of graded perovskite solar cells under long-term heat/light soaking has not been demonstrated. In this study, a facile partial ion-exchange approach is reported to achieve compositionally graded perovskite absorber layers. Incorporating compositional grading improves charge collection and suppresses interface recombination, enabling to fabricate near-infrared-transparent perovskite solar cells with power conversion efficiency of 16.8% in substrate configuration, and demonstrate 22.7% tandem efficiency with 3.3% absolute gain when mechanically stacked on a Cu(In,Ga)Se 2 bottom cell. Non-encapsulated graded perovskite device retains over 93% of its initial efficiency after 1000 h operation at maximum power point at 60 °C under equivalent 1 sun illumination. The results open an avenue in exploring partial ion-exchange to design graded perovskite solar cells with improved efficiency and stability.

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

PubMed

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Development of Silver-Free Silicon Photovoltaic Solar Cells with All-Aluminum Electrodes

NASA Astrophysics Data System (ADS)

Sun, Wen-Cheng

To date, the most popular and dominant material for commercial solar cells is crystalline silicon (or wafer-Si). It has the highest cell efficiency and cell lifetime out of all commercial solar cells. Although the potential of crystalline-Si solar cells in supplying energy demands is enormous, their future growth will likely be constrained by two major bottlenecks. The first is the high electricity input to produce crystalline-Si solar cells and modules, and the second is the limited supply of silver (Ag) reserves. These bottlenecks prevent crystalline-Si solar cells from reaching terawatt-scale deployment, which means the electricity produced by crystalline-Si solar cells would never fulfill a noticeable portion of our energy demands in the future. In order to solve the issue of Ag limitation for the front metal grid, aluminum (Al) electroplating has been developed as an alternative metallization technique in the fabrication of crystalline-Si solar cells. The plating is carried out in a near-room-temperature ionic liquid by means of galvanostatic electrolysis. It has been found that dense, adherent Al deposits with resistivity in the high 10--6 Ω-cm range can be reproducibly obtained directly on Si substrates and nickel seed layers. An all-Al Si solar cell, with an electroplated Al front electrode and a screen-printed Al back electrode, has been successfully demonstrated based on commercial p-type monocrystalline-Si solar cells, and its efficiency is approaching 15%. Further optimization of the cell fabrication process, in particular a suitable patterning technique for the front silicon nitride layer, is expected to increase the efficiency of the cell to ~18%. This shows the potential of Al electroplating in cell metallization is promising and replacing Ag with Al as the front finger electrode is feasible.

Synthesis of active absorber layer by dip-coating method for perovskite solar cell

NASA Astrophysics Data System (ADS)

Singh, Rahul; Noor, I. M.; Singh, Pramod K.; Bhattacharya, B.; Arof, A. K.

2018-04-01

In this paper, we develop the hybrid perovskite-based n-i-p solar cell using a simple, fast and low-cost dip-coating method. Hot solution and the pre-annealed substrate are used for coating the perovskite thin film by this method this is further used for studying its structural and electrical properties. UV-vis spectroscopy is carried out for calculating the band gap of the hybrid perovskite layer which is ∼1.6 eV. X-ray spectroscopy confirms that the formation of hybrid perovskite layer. The profilometer is used to study the surface roughness and also for measuring the thickness of the perovskite layer with varying substrate temperature. The optimized sample was further used for cross-sectional SEM image to verify the thickness measured from the profiler. The electrical parameter of JV characteristic with varying temperature is tabulated in the table. Whereas, the perovskite sensitized solar cell exhibits highest short circuit current density, Jsc of 11 mA cm-2, open circuit voltage, Voc of 0.87 V, fill factor of 0.55 and efficiency, η of >5%.

Material growth and characterization directed toward improving III-V heterojunction solar cells

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Alexander, W. E.; Collis, W.; Abul-Fadl, A.

1979-01-01

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

Nano-cones for broadband light coupling to high index substrates

NASA Astrophysics Data System (ADS)

Buencuerpo, J.; Torné, L.; Álvaro, R.; Llorens, J. M.; Dotor, M. L.; Ripalda, J. M.

2016-12-01

The moth-eye structure has been proposed several times as an antireflective coating to replace the standard optical thin films. Here, we experimentally demonstrate the feasibility of a dielectric moth-eye structure as an antireflective coating for high-index substrates, like GaAs. The fabricated photonic crystal has Si3N4 cones in a square lattice, sitting on top of a TiO2 index matching layer. This structure attains 1.4% of reflectance power losses in the operation spectral range of GaAs solar cells (440-870 nm), a 12.5% relative reduction of reflection power losses in comparison with a standard bilayer. The work presented here considers a fabrication process based on laser interference lithography and dry etching, which are compatible with solar cell devices. The experimental results are consistent with scattering matrix simulations of the fabricated structures. In a broader spectral range (400-1800 nm), the simulation estimates that the nanostructure also significantly outperforms the standard bilayer coating (3.1% vs. 4.5% reflection losses), a result of interest for multijunction tandem solar cells.

High-efficiency indium tin oxide/indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-01-01

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

A transparent, solvent-free laminated top electrode for perovskite solar cells.

PubMed

Makha, Mohammed; Fernandes, Silvia Letícia; Jenatsch, Sandra; Offermans, Ton; Schleuniger, Jürg; Tisserant, Jean-Nicolas; Véron, Anna C; Hany, Roland

2016-01-01

A simple lamination process of the top electrode for perovskite solar cells is demonstrated. The laminate electrode consists of a transparent and conductive plastic/metal mesh substrate, coated with an adhesive mixture of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS, and sorbitol. The laminate electrode showed a high degree of transparency of 85%. Best cell performance was achieved for laminate electrodes prepared with a sorbitol concentration of ~30 wt% per milliliter PEDOT:PSS dispersion, and using a pre-annealing temperature of 120°C for 10 min before lamination. Thereby, perovskite solar cells with stabilized power conversion efficiencies of (7.6 ± 1.0)% were obtained which corresponds to 80% of the reference devices with reflective opaque gold electrodes.

A transparent, solvent-free laminated top electrode for perovskite solar cells

NASA Astrophysics Data System (ADS)

Makha, Mohammed; Fernandes, Silvia Letícia; Jenatsch, Sandra; Offermans, Ton; Schleuniger, Jürg; Tisserant, Jean-Nicolas; Véron, Anna C.; Hany, Roland

2016-01-01

A simple lamination process of the top electrode for perovskite solar cells is demonstrated. The laminate electrode consists of a transparent and conductive plastic/metal mesh substrate, coated with an adhesive mixture of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS, and sorbitol. The laminate electrode showed a high degree of transparency of 85%. Best cell performance was achieved for laminate electrodes prepared with a sorbitol concentration of 30 wt% per milliliter PEDOT:PSS dispersion, and using a pre-annealing temperature of 120°C for 10 min before lamination. Thereby, perovskite solar cells with stabilized power conversion efficiencies of (7.6 ± 1.0)% were obtained which corresponds to 80% of the reference devices with reflective opaque gold electrodes.

High efficiency thin-film multiple-gap photovoltaic device

DOEpatents

Dalal, Vikram L.

1983-01-01

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

NASA Technical Reports Server (NTRS)

Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig; Lin, John K.; Scarborough, Stephen E.

2005-01-01

Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics.

PubMed

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W; Ryu, Koungmin; Thompson, Mark E; Zhou, Chongwu

2010-05-25

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness ( approximately 0.9 nm) and offered sheet resistance down to 230 Omega/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (eta) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138 degrees , whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60 degrees . Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications.

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.

2005-01-01

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

Metamorphic III–V Solar Cells: Recent Progress and Potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Ivan; France, Ryan M.; Geisz, John F.

Inverted metamorphic multijunction solar cells have been demonstrated to be a pathway to achieve the highest photovoltaic (PV) conversion efficiencies. Attaining high-quality lattice-mismatched (metamorphic) semiconductor devices is challenging. However, recent improvements to compositionally graded buffer epitaxy and junction structures have led to the achievement of high-quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. For this high material quality, photon recycling is significant, and therefore, the optical environment of the solar cell becomes important. In this paper, we first present recent progress and performance results for 1- and 0.7-eV GaInAs solar cells grown on GaAs substrates. Then, an electroopticalmore » model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that the quality of 1-eV subcells is such that further improving its electronic quality does not produce significant Voc increases in the four-junction inverted metamorphic subcells, unless a back reflector is used to enhance photon recycling, which would significantly complicate the structure. Conversely, improving the electronic quality of the 0.7-eV subcell would lead to significant Voc boosts, driving the progress of four-junction inverted metamorphic solar cells.« less

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Dye-sensitized solar cells fabricated with black raspberry, black carrot and rosella juice

NASA Astrophysics Data System (ADS)

Tekerek, S.; Kudret, A.; Alver, Ü.

2011-10-01

In this work, dye sensitized solar cells (DSSC's) were constructed from black raspberry ( Rubus Ideaus), black carrot ( Daucuscarota L.) and rosella juice ( Hibiscus Sabdariffa L.). In order to fabricate a DSSC the fluorine-doped tin (IV) oxide (FTO) thin films obtained by using spray pyrolysis technique were used as a substrate. TiO2 films on FTO layers were prepared by doctor-blading technique. Platinum-coated counter electrode and liquid Iodide/Iodine electrolyte solution were used to fabricate DSSC's. The efficiencies of solar cells produced with black carrot, rosella and black raspberry juice were calculated as 0.25%, 0.16% and 0.16% respectively, under a sunny day in Kahramanmaraş-Turkey.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

This paper discusses both state-of-the-art and advanced development cell and array technology. Present technology includes rigid, roll-out, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is discussed based on both DOD efforts and NASA work. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency thin radiation resistant cells is examined. This includes gallium arsenide/germanium, indium phosphide, and thin film devices such as copper indium disclenide.

Tunable TiO2 Nanotube Arrays for Flexible Bio-Sensitized Solar Cells

DTIC Science & Technology

2012-08-01

microid extender followed by a colloidal silica /wetted imperial cloth. The foil was then cut into 1- × 2-cm samples. Then, the substrates were...17. Lei, B.; Liao, J.; Wang, R. J.; Su, C.; Kuang, D. Ordered Crystalline Ti02 Nanotube Arrays on Transparent FTO Glass for Efficient Dye...combined with a transparent , Indium Tin Dioxide coated PET film are attractive candidates for efficient, flexible DSSC’s. Flexible solar cells offer

Solar energy conversion in a photoelectrochemical biofuel cell.

PubMed

Hambourger, Michael; Kodis, Gerdenis; Vaughn, Michael D; Moore, Gary F; Gust, Devens; Moore, Ana L; Moore, Thomas A

2009-12-07

A photoelectrochemical biofuel cell has been developed which incorporates aspects of both an enzymatic biofuel cell and a dye-sensitized solar cell. Photon absorption at a porphyrin-sensitized n-type semiconductor electrode gives rise to a charge-separated state. Electrons and holes are shuttled to appropriate cathodic and anodic catalysts, respectively, allowing the production of electricity, or a reduced fuel, via the photochemical oxidation of a biomass-derived substrate. The operation of this device is reviewed. The use of alternate anodic redox mediators provides insight regarding loss mechanisms in the device. Design strategies for enhanced performance are discussed.

Full coverage of perovskite layer onto ZnO nanorods via a modified sequential two-step deposition method for efficiency enhancement in perovskite solar cells

NASA Astrophysics Data System (ADS)

Ruankham, Pipat; Wongratanaphisan, Duangmanee; Gardchareon, Atcharawon; Phadungdhitidhada, Surachet; Choopun, Supab; Sagawa, Takashi

2017-07-01

Full coverage of perovskite layer onto ZnO nanorod substrates with less pinholes is crucial for achieving high-efficiency perovskite solar cells. In this work, a two-step sequential deposition method is modified to achieve an appropriate property of perovskite (MAPbI3) film. Surface treatment of perovskite layer and its precursor have been systematically performed and their morphologies have been investigated. By pre-wetting of lead iodide (PbI2) and letting it dry before reacting with methylammonium iodide (MAI) provide better coverage of perovskite film onto ZnO nanorod substrate than one without any treatment. An additional MAI deposition followed with toluene drop-casting technique on the perovskite film is also found to increase the coverage and enhance the transformation of PbI2 to MAPbI3. These lead to longer charge carrier lifetime, resulting in an enhanced power conversion efficiency (PCE) from 1.21% to 3.05%. The modified method could been applied to a complex ZnO nanorods/TiO2 nanoparticles substrate. The enhancement in PCE to 3.41% is observed. These imply that our introduced method provides a simple way to obtain the full coverage and better transformation to MAPbI3 phase for enhancement in performances of perovskite solar cells.

Dynamic kirigami structures for integrated solar tracking.

PubMed

Lamoureux, Aaron; Lee, Kyusang; Shlian, Matthew; Forrest, Stephen R; Shtein, Max

2015-09-08

Optical tracking is often combined with conventional flat panel solar cells to maximize electrical power generation over the course of a day. However, conventional trackers are complex and often require costly and cumbersome structural components to support system weight. Here we use kirigami (the art of paper cutting) to realize novel solar cells where tracking is integral to the structure at the substrate level. Specifically, an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched to produce an array of tilted surface elements which can be controlled to within ±1°. We analyze the combined optical and mechanical properties of the tracking system, and demonstrate a mechanically robust system with optical tracking efficiencies matching conventional trackers. This design suggests a pathway towards enabling new applications for solar tracking, as well as inspiring a broader range of optoelectronic and mechanical devices.

Dynamic kirigami structures for integrated solar tracking

PubMed Central

Lamoureux, Aaron; Lee, Kyusang; Shlian, Matthew; Forrest, Stephen R.; Shtein, Max

2015-01-01

Optical tracking is often combined with conventional flat panel solar cells to maximize electrical power generation over the course of a day. However, conventional trackers are complex and often require costly and cumbersome structural components to support system weight. Here we use kirigami (the art of paper cutting) to realize novel solar cells where tracking is integral to the structure at the substrate level. Specifically, an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched to produce an array of tilted surface elements which can be controlled to within ±1°. We analyze the combined optical and mechanical properties of the tracking system, and demonstrate a mechanically robust system with optical tracking efficiencies matching conventional trackers. This design suggests a pathway towards enabling new applications for solar tracking, as well as inspiring a broader range of optoelectronic and mechanical devices. PMID:26348820

Modeling of organic solar cell using response surface methodology

NASA Astrophysics Data System (ADS)

Suliman, Rajab; Mitul, Abu Farzan; Mohammad, Lal; Djira, Gemechis; Pan, Yunpeng; Qiao, Qiquan

Polymer solar cells have drawn much attention during the past few decades due to their low manufacturing cost and incompatibility for flexible substrates. In solution-processed organic solar cells, the optimal thickness, annealing temperature, and morphology are key components to achieving high efficiency. In this work, response surface methodology (RSM) is used to find optimal fabrication conditions for polymer solar cells. In order to optimize cell efficiency, the central composite design (CCD) with three independent variables polymer concentration, polymer-fullerene ratio, and active layer spinning speed was used. Optimal device performance was achieved using 10.25 mg/ml polymer concentration, 0.42 polymer-fullerene ratio, and 1624 rpm of active layer spinning speed. The predicted response (the efficiency) at the optimum stationary point was found to be 5.23% for the Poly(diketopyrrolopyrrole-terthiophene) (PDPP3T)/PC60BM solar cells. Moreover, 97% of the variation in the device performance was explained by the best model. Finally, the experimental results are consistent with the CCD prediction, which proves that this is a promising and appropriate model for optimum device performance and fabrication conditions.

The impact of solar cell technology on planar solar array performance

NASA Technical Reports Server (NTRS)

Mills, Michael W.; Kurland, Richard M.

1989-01-01

The results of a study into the potential impact of advanced solar cell technologies on the characteristics (weight, cost, area) of typical planar solar arrays designed for low, medium and geosynchronous altitude earth orbits are discussed. The study considered planar solar array substrate designs of lightweight, rigid-panel graphite epoxy and ultra-lightweight Kapton. The study proposed to answer the following questions: Do improved cell characteristics translate into array-level weight, size and cost improvements; What is the relative importance of cell efficiency, weight and cost with respect to array-level performance; How does mission orbital environment affect array-level performance. Comparisons were made at the array level including all mechanisms, hinges, booms, and harnesses. Array designs were sized to provide 5kW of array power (not spacecraft bus power, which is system dependent but can be scaled from given values). The study used important grass roots issues such as use of the GaAs radiation damage coefficients as determined by Anspaugh. Detailed costing was prepared, including cell and cover costs, and manufacturing attrition rates for the various cell types.

All-Nonvacuum-Processed CIGS Solar Cells Using Scalable Ag NWs/AZO-Based Transparent Electrodes.

PubMed

Wang, Mingqing; Choy, Kwang-Leong

2016-07-06

With record cell efficiency of 21.7%, CIGS solar cells have demonstrated to be a very promising photovoltaic (PV) technology. However, their market penetration has been limited due to the inherent high cost of the cells. In this work, to lower the cost of CIGS solar cells, all nonvacuum-processed CIGS solar cells were designed and developed. CIGS absorber was prepared by the annealing of electrodeposited metallic layers in a chalcogen atmosphere. Nonvacuum-deposited Ag nanowires (NWs)/AZO transparent electrodes (TEs) with good transmittance (92.0% at 550 nm) and high conductivity (sheet resistance of 20 Ω/□) were used to replace the vacuum-sputtered window layer. Additional thermal treatment after device preparation was conducted at 220 °C for a few of minutes to improve both the value and the uniformity of the efficiency of CIGS pixel cell on 5 × 5 cm substrate. The best performance of the all-nonvacuum-fabricated CIGS solar cells showed an efficiency of 14.05% with Jsc of 34.82 mA/cm(2), Voc of 0.58 V, and FF of 69.60%, respectively, which is comparable with the efficiency of 14.45% of a reference cell using a sputtered window layer.

Large-area SnO{sub 2}: F thin films by offline APCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yan; Wu, Yucheng, E-mail: ycwu@hfut.edu.cn; Qin, Yongqiang

2011-08-15

Highlights: {yields} Large-area (1245 mm x 635 mm) FTO thin films were successfully deposited by offline APCVD process. {yields} The as-prepared FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83% exhibited better than that of the online ones. {yields} The maximum quantum efficiency of the solar cells based on offline FTO substrate was 0.750 at wavelength 540 nm. {yields} The power of the solar modules using the offline FTO as glass substrates was 51.639 W, higher than that of the modules based on the online ones. -- Abstract: In this paper, we reported the successfulmore » preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245 mm x 635 mm x 3 mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200-300 nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage and short circuit current for a-Si:H solar modules.« less

Low-Cd CIGS solar cells made with a hybrid CdS/Zn(O,S) buffer layer

DOE PAGES

Garris, Rebekah L.; Mansfield, Lorelle M.; Egaas, Brian; ...

2016-10-27

In Cu(In,Ga)Se2 (CIGS) solar cells, CdS and Zn(O,S) buffer layers were compared with a hybrid buffer layer consisting of thin CdS followed Zn(O,S). We explore the physics of this hybrid layer that combines the standard (Cd) approach with the alternative (Zn) approach in the pursuit to unlock further potential for CIGS technology. CdS buffer development has shown optimal interface properties, whereas Zn(O,S) buffer development has shown increased photocurrent. Although a totally Cd-free solar module is more marketable, the retention of a small amount of Cd can be beneficial to achieve optimum junction properties. As long as the amount of Cdmore » is reduced to less than 0.01% by weight, the presence of Cd does not violate the hazardous substance restrictions of the European Union (EU). We estimate the amount of Cd allowed in the EU for CIGS on both glass and stainless steel substrates, and we show that reducing Cd becomes increasingly important as substrate weights decrease. As a result, this hybrid buffer layer had reduced Cd content and a wider space charge region, while achieving equal or better solar cell performance than buffer layers of either CdS or Zn(O,S) alone.« less

Self-assembly of microscopic chiplets at a liquid–liquid–solid interface forming a flexible segmented monocrystalline solar cell

PubMed Central

Knuesel, Robert J.; Jacobs, Heiko O.

2010-01-01

This paper introduces a method for self-assembling and electrically connecting small (20–60 micrometer) semiconductor chiplets at predetermined locations on flexible substrates with high speed (62500 chips/45 s), accuracy (0.9 micrometer, 0.14°), and yield (> 98%). The process takes place at the triple interface between silicone oil, water, and a penetrating solder-patterned substrate. The assembly is driven by a stepwise reduction of interfacial free energy where chips are first collected and preoriented at an oil-water interface before they assemble on a solder-patterned substrate that is pulled through the interface. Patterned transfer occurs in a progressing linear front as the liquid layers recede. The process eliminates the dependency on gravity and sedimentation of prior methods, thereby extending the minimal chip size to the sub-100 micrometer scale. It provides a new route for the field of printable electronics to enable the integration of microscopic high performance inorganic semiconductors on foreign substrates with the freedom to choose target location, pitch, and integration density. As an example we demonstrate a fault-tolerant segmented flexible monocrystalline silicon solar cell, reducing the amount of Si that is used when compared to conventional rigid cells. PMID:20080682

Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

NASA Astrophysics Data System (ADS)

Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

2013-01-01

P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

Influence of Growth Temperature on the Characteristics of Single-Junction p–i–n InGaP Solar Cells.

PubMed

Jung, Sang Hyun; Kim, Youngjo; Kim, Chang Zoo; Jun, Dong-Hwan; Kim, Kangho; Shin, Hyun-Beom; Choi, JeHyuk; Park, Won-Kyu; Lee, Jaejin; Kang, Ho Kwan

2017-04-01

Single-junction p–i–n InGaP solar cells are grown at various temperatures from 620 to 700 °C by low pressure metalorganic chemical vapor deposition on GaAs (001) substrates. The short circuit current density of the p–i–n InGaP solar cells increases by up to 38.8% when the growth temperature is reduced from 700 to 620 °C, while the open circuit voltage and fill factor show relatively small changes. The external quantum efficiency, especially, in the wavelength regime below 500 nm, is improved for the p–i–n InGaP solar cells grown at lower temperatures. The improvement might be attributed to the reduced absorption loss of the photons in the n-InGaP emitter region. The highest conversion efficiency of 11.01% is attributed from the p–i–n InGaP solar cell grown at 640 °C. Electron mobility and concentration of undoped InGaP layers are investigated as a function of the growth temperature and correlated with the p–i–n InGaP solar cell performance.

Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells

PubMed Central

2014-01-01

Molybdenum disulfide (MoS2)/cadmium sulfide (CdS) heterojunction solar cells were successfully synthesized via chemical bath deposition (CBD) and chemical vapor deposition (CVD). The as-grown CdS film on a fluorine tin oxide (FTO) substrate deposited by CBD is continuous and compact. The MoS2 film deposited by CVD is homogeneous and continuous, with a uniform color and a thickness of approximately 10 nm. The optical absorption range of the MoS2/CdS heterojunction covers the visible and near-infrared spectral regions of 350 to 800 nm, which is beneficial for the improvement of solar cell efficiency. Moreover, the MoS2/CdS solar cell exhibits good current-voltage (I-V) characteristics and pronounced photovoltaic behavior, with an open-circuit voltage of 0.66 V and a short-circuit current density of 0.227 × 10-6 A/cm2, comparable to the results obtained from other MoS2-based solar cells. This research is critical to investigate more efficient and stable solar cells based on graphene-like materials in the future. PMID:25593552

Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

PubMed

Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

2016-07-20

With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

NASA Astrophysics Data System (ADS)

García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Unassisted photoelectrochemical water splitting exceeding 7% solar-to-hydrogen conversion efficiency using photon recycling

PubMed Central

Shi, Xinjian; Jeong, Hokyeong; Oh, Seung Jae; Ma, Ming; Zhang, Kan; Kwon, Jeong; Choi, In Taek; Choi, Il Yong; Kim, Hwan Kyu; Kim, Jong Kyu; Park, Jong Hyeok

2016-01-01

Various tandem cell configurations have been reported for highly efficient and spontaneous hydrogen production from photoelectrochemical solar water splitting. However, there is a contradiction between two main requirements of a front photoelectrode in a tandem cell configuration, namely, high transparency and high photocurrent density. Here we demonstrate a simple yet highly effective method to overcome this contradiction by incorporating a hybrid conductive distributed Bragg reflector on the back side of the transparent conducting substrate for the front photoelectrochemical electrode, which functions as both an optical filter and a conductive counter-electrode of the rear dye-sensitized solar cell. The hybrid conductive distributed Bragg reflectors were designed to be transparent to the long-wavelength part of the incident solar spectrum (λ>500 nm) for the rear solar cell, while reflecting the short-wavelength photons (λ<500 nm) which can then be absorbed by the front photoelectrochemical electrode for enhanced photocurrent generation. PMID:27324578

Prospects of e-beam evaporated molybdenum oxide as a hole transport layer for perovskite solar cells

NASA Astrophysics Data System (ADS)

Ali, F.; Khoshsirat, N.; Duffin, J. L.; Wang, H.; Ostrikov, K.; Bell, J. M.; Tesfamichael, T.

2017-09-01

Perovskite solar cells have emerged as one of the most efficient and low cost technologies for delivering of solar electricity due to their exceptional optical and electrical properties. Commercialization of the perovskite solar cells is, however, limited because of the higher cost and environmentally sensitive organic hole transport materials such as spiro-OMETAD and PEDOT:PSS. In this study, an empirical simulation was performed using the Solar Cell Capacitance Simulator software to explore the MoOx thin film as an alternative hole transport material for perovskite solar cells. In the simulation, properties of MoOx thin films deposited by the electron beam evaporation technique from high purity (99.99%) MoO3 pellets at different substrate temperatures (room temperature, 100 °C and 200 °C) were used as input parameters. The films were highly transparent (>80%) and have low surface roughness (≤2 nm) with bandgap energy ranging between 3.75 eV and 3.45 eV. Device simulation has shown that the MoOx deposited at room temperature can work in both the regular and inverted structures of the perovskite solar cell with a promising efficiency of 18.25%. Manufacturing of the full device is planned in order to utilize the MoOx as an alternative hole transport material for improved performance, good stability, and low cost of the perovskite solar cell.

PEP solar array definition study

NASA Technical Reports Server (NTRS)

1979-01-01

The conceptual design of a large, flexible, lightweight solar array is presented focusing on a solar array overview assessment, solar array blanket definition, structural-mechanical systems definition, and launch/reentry blanket protection features. The overview assessment includes a requirements and constraints review, the thermal environment assessment on the design selection, an evaluation of blanket integration sequence, a conceptual blanket/harness design, and a hot spot analysis considering the effects of shadowing and cell failures on overall array reliability. The solar array blanket definition includes the substrate design, hinge designs and blanket/harness flexibility assessment. The structural/mechanical systems definition includes an overall loads and deflection assessment, a frequency analysis of the deployed assembly, a components weights estimate, design of the blanket housing and tensioning mechanism. The launch/reentry blanket protection task includes assessment of solar cell/cover glass cushioning concepts during ascent and reentry flight condition.

Effect of substrate preheating on the photovoltaic performance of ZnO nanorod-based perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Wei-Shuo; Lin, Tsyr-Rou; Yang, Hsiu-Ting; Li, Yu-Ren; Chuang, Kai-Chi; Li, Yi-Shao; Luo, Jun-Dao; Hus, Chain-Shu; Cheng, Huang-Chung

2018-06-01

In this study, zinc oxide nanorods (ZnO-NRs) grown via a low-temperature hydrothermal growth process are used as the electron transport layer (ETL) owing to their low temperature process and three-dimensional structure, which increases the surface area and thereby improves photovoltaic performance. To further improve the performance of solar cells, substrate preheating before spin-coating PbI2 and perovskite films was conducted. With the increase in preheating temperature, the grain size, surface uniformity, and crystallinity of perovskite increased. Consequently, the photovoltaic performances of the devices with 150-nm-long ZnO-NRs and substrate preheating at 150 °C showed an optimum open-circuit voltage (V oc) of 0.84 V, a short-circuit current (J sc) of 21.43 mA/cm2, a fill factor (FF) of 57.42%, and a power conversion efficiency (PCE) of 10.34% owing to the superior quality of the perovskite films having smooth surfaces with fewer pinholes.

Substrate-induced interfacial plasmonics for photovoltaic conversion

PubMed Central

Li, Xinxi; Jia, Chuancheng; Ma, Bangjun; Wang, Wei; Fang, Zheyu; Zhang, Guoqing; Guo, Xuefeng

2015-01-01

Surface plasmon resonance (SPR) is widely used as light trapping schemes in solar cells, because it can concentrate light fields surrounding metal nanostructures and realize light management at the nanoscale. SPR in photovoltaics generally occurs at the metal/dielectric interfaces. A well-defined interface is therefore required to elucidate interfacial SPR processes. Here, we designed a photovoltaic device (PVD) with an atomically flat TiO2 dielectric/dye/graphene/metal nanoparticle (NP) interface for quantitatively studying the SPR enhancement of the photovoltaic conversion. Theoretical and experimental results indicated that the graphene monolayer was transparent to the electromagnetic field. This transparency led to significant substrate-induced plasmonic hybridization at the heterostructure interface. Combined with interparticle plasmonic coupling, the substrate-induced plasmonics concentrated light at the interface and enhanced the photo-excitation of dyes, thus improving the photoelectric conversion. Such a mechanistic understanding of interfacial plasmonic enhancement will further promote the development of efficient plasmon-enhanced solar cells and composite photocatalysts. PMID:26412576

Crystal defects in solar cells produced by the method of thermomigration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lozovskii, V. N.; Lomov, A. A.; Lunin, L. S.

2017-03-15

The results of studying the crystal structure of regions in silicon, recrystallized during the course of thermomigration of the liquid Si–Al zone in the volume of the silicon substrate, are reported (similar regions doped with an acceptor impurity are used to obtain high-voltage solar cells). X-ray methods (including measurements of both diffraction-reflection curves and topograms) and also high-resolution electron microscopy indicate that single-crystal regions in the form of a series of thin strips or rectangular grids are formed as a result of the thermomigration of liquid zones. Dislocation half-loops are detected in the surface layers of the front and backmore » surfaces of the substrate. (311)-type defects are observed in the recrystallized regions.« less

ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

DOEpatents

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

Silicon Schottky photovoltaic diodes for solar energy conversion

NASA Technical Reports Server (NTRS)

Anderson, W. A.

1975-01-01

Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

Fundamental Study on the Fabrication of Inverted Planar Perovskite Solar Cells Using Two-Step Sequential Substrate Vibration-Assisted Spray Coating (2S-SVASC).

PubMed

Zabihi, Fatemeh; Ahmadian-Yazdi, Mohammad-Reza; Eslamian, Morteza

2016-12-01

In this paper, a scalable and fast process is developed and employed for the fabrication of the perovskite light harvesting layer in inverted planar heterojunction solar cell (FTO/PEDOT:PSS/CH3NH3PbI3-x Cl x /PCBM/Al). Perovskite precursor solutions are sprayed onto an ultrasonically vibrating substrate in two sequential steps via a process herein termed as the two-step sequential substrate vibration-assisted spray coating (2S-SVASC). The gentle imposed ultrasonic vibration on the substrate promotes droplet spreading and coalescence, surface wetting, evaporation, mixing of reagents, and uniform growth of perovskite nanocrystals. The role of the substrate temperature, substrate vibration intensity, and the time interval between the two sequential sprays are studied on the roughness, coverage, and crystalline structure of perovskite thin films. We demonstrate that a combination of a long time interval between spraying of precursor solutions (15 min), a high substrate temperature (120 °C), and a mild substrate vibration power (5 W) results in a favorable morphology and surface quality. The characteristics and performance of prepared perovskite thin films made via the 2S-SVASC technique are compared with those of the co-sprayed perovskite thin films. The maximum power conversion efficiency of 5.08 % on a 0.3-cm(2) active area is obtained for the device made via the scalable 2S-SVASC technique.

P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

NASA Astrophysics Data System (ADS)

Man, Hamdi

Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of these novel solar cells.

Characterization of β-FeSi II films as a novel solar cell semiconductor

NASA Astrophysics Data System (ADS)

Fukuzawa, Yasuhiro; Ootsuka, Teruhisa; Otogawa, Naotaka; Abe, Hironori; Nakayama, Yasuhiko; Makita, Yunosuke

2006-04-01

β-FeSi II is an attractive semiconductor owing to its extremely high optical absorption coefficient (α>10 5 cm -1), and is expected to be an ideal semiconductor as a thin film solar cell. For solar cell use, to prepare high quality β-FeSi II films holding a desired Fe/Si ratio, we chose two methods; one is a molecular beam epitaxy (MBE) method in which Fe and Si were evaporated by using normal Knudsen cells, and occasionally by e-gun for Si. Another one is the facing-target sputtering (FTS) method in which deposition of β-FeSi II films is made on Si substrate that is placed out of gas plasma cloud. In both methods to obtain β-FeSi II films with a tuned Fe/Si ratio, Fe/Si super lattice was fabricated by varying Fe and Si deposition thickness. Results showed significant in- and out-diffusion of host Fe and Si atoms at the interface of Si substrates into β-FeSi II layers. It was experimentally demonstrated that this diffusion can be suppressed by the formation of template layer between the epitaxial β-FeSi II layer and the substrate. The template layer was prepared by reactive deposition epitaxy (RDE) method. By fixing the Fe/Si ratio as precisely as possible at 1/2, systematic doping experiments of acceptor (Ga and B) and donor (As) impurities into β-FeSi II were carried out. Systematical changes of electron and hole carrier concentration in these samples along variation of incorporated impurities were observed through Hall effect measurements. Residual carrier concentrations can be ascribed to not only the remaining undesired impurities contained in source materials but also to a variety of point defects mainly produced by the uncontrolled stoichiometry. A preliminary structure of n-β-FeSi II/p-Si used as a solar cell indicated a conversion efficiency of 3.7%.

The electrodeposition of multilayers on a polymeric substrate in flexible organic photovoltaic solar cells

NASA Astrophysics Data System (ADS)

Guedes, Andre F. S.; Guedes, Vilmar P.; Souza, Monica L.; Tartari, Simone; Cunha, Idaulo J.

2015-09-01

Flexible organic photovoltaic solar cells have drawn intense attention due to their advantages over competing solar cell technologies. The method utilized to deposit as well as to integrate solutions and processed materials, manufacturing organic solar cells by the Electrodeposition System, has been presented in this research. In addition, we have demonstrated a successful integration of a process for manufacturing the flexible organic solar cell prototype and we have discussed on the factors that make this process possible. The maximum process temperature was 120°C, which corresponds to the baking of the active polymeric layer. Moreover, the new process of the Electrodeposition of complementary active layer is based on the application of voltage versus time in order to obtain a homogeneous layer with thin film. This thin film was not only obtained by the electrodeposition of PANI-X1 on P3HT/PCBM Blend, but also prepared in perchloric acid solution. Furthermore, these flexible organic photovoltaic solar cells presented power conversion efficiency of 12% and the inclusion of the PANI-X1 layer reduced the effects of degradation on these organic photovoltaic panels induced by solar irradiation. Thus, in the Scanning Electron Microscopy (SEM), these studies have revealed that the surface of PANI-X1 layers is strongly conditioned by the dielectric surface morphology.

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression.

PubMed

He, Jian; Gao, Pingqi; Liao, Mingdun; Yang, Xi; Ying, Zhiqin; Zhou, Suqiong; Ye, Jichun; Cui, Yi

2015-06-23

Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.

Leading Modes of the 3pi0 production in proton-proton collisions at incident proton momentum 3.35GeV/c

NASA Astrophysics Data System (ADS)

Jampana, Balakrishnam R.

The III-nitride semiconductor material system, which consists of InN, GaN, AlN and their alloys, offers a substantial potential in developing ultra-high efficiency photovoltaics mainly due to its wide range of direct-bandgap (0.7 eV -- 3.4 eV), and other electronic, optical and mechanical properties. However, this novel InGaN material system poses technological challenges which extended into the performance of InGaN devices. The development of wide-band gap p--n InGaN homojunction solar cells with bandgap < 2.4 eV is investigated in the present work. The growth, fabrication and characterization of a 2.7 eV bandgap InGaN solar cell with a 1.73 eV open-circuit voltage is demonstrated. Limited solar cell performance, in terms of short-circuit current and efficiency, is observed. The poor performance of the InGaN solar cell is related to the formation of extended crystalline defects in InGaN epilayers of the solar cell structure. To investigate the influence of extended crystalline defects on InGaN epilayer properties, a few In0.12Ga0.88N epilayers with different thicknesses are grown and characterized for structural properties using high-resolution X-ray diffraction. The structural parameters, modeled as mosaic blocks, indicate deterioration in InGaN crystal quality when the film thickness exceeds a critical layer thickness. An associated increase in density of threading dislocations with deteriorated InGaN crystal quality is observed. The critical layer thickness is determined for a few InGaN compositions in the range of 6 -- 21 % In, and it decreases with increasing InGaN composition. Surface roughening and formation of V-defects are observed on InGaN surface beyond the critical layer thickness. An Urbach tail in optical absorption of InGaN epilayer is observed and it is related to the formation of V-defects. The direct consequence of light absorption via V-defects is a decrease in photoluminescence peak intensity with increasing InGaN epilayer thickness beyond critical layer thickness. Two p-i-n InGaN solar cell structures were designed, with InGaN epilayer thickness in one solar cell greater than the critical layer thickness and the other with a lower thickness, to investigate the influence of V-defects on performance of the solar cells. The photoresponse of the p-i-n InGaN solar cell with thicker InGaN epilayer is poor, while the other solar cell had good photoresponse and external quantum efficiency. Extending this investigation to a p-n InGaN solar cell, a solar cell with total InGaN epilayer less than the critical layer thickness is grown. The photoresponse and external quantum efficiency of the present solar cell is superior compared to the initially designed p-n InGaN homojunction solar cells. Solar cell characteristics without p-GaN capping layer in the above p-n InGaN solar cell are also investigated. Good open-circuit voltage is observed, but the short-circuit current and efficiency are limited by the formation of extended crystalline defects, as observed with other initial solar cell designs. A processing sequence is developed to coat III-nitride sidewalls, created during fabrication to form electrical contacts, with SiO2 to maximize the active device area and minimize accidental damage of solar cell during fabrication. Additionally, deposition of current spreading layers on p-type III-nitride epilayer to reduce the series resistance is evaluated. The III-nitrides are primarily grown on sapphire substrate and in a continued effort they are realized later on silicon substrate. InGaN solar cell structures were grown simultaneously on GaN/sapphire and GaN/silicon templates and their photoresponse is compared.

Controlled Spalling in (100)-Oriented Germanium by Electroplating

NASA Astrophysics Data System (ADS)

Crouse, Dustin Ray

This work investigates controlled spalling as a method to exfoliate thin films of various thickness from rigid, crystalline germanium (Ge) substrates and to enable substrate reuse for III-V single junction photovoltaic devices. Technological limitations impeding wide-spread adoption of flexible electronics and high-material-cost photovoltaic devices have motivated significant interest in a method to remove devices from their substrates. DC magnetron sputtering has been previously utilized to remove semiconductor devices of various thicknesses from Ge substrates, but this method is expensive and time-consuming. Controlled spalling via high-speed electrodeposition is a fast, inexpensive exfoliation method that utilizes a tensile-stressed metal layer deposited on a (100)-oriented Ge substrate and an external force to mechanically propagate a crack parallel to the surface at a desired depth in the substrate material. Suo and Hutchinson's quantitative models describe critical combinations of film thickness and strain mismatch between a film and substrate at which a stressed bilayer system spontaneously spalls; however, fine control over a wide steady-state spall depth range has been limited by the ability to experimentally tailor strain mismatch caused by residual stress within deposited stressor layers. This work investigates the effect of tuning electroplating current density and electrolyte chemistry on the residual stress in a nickel stressor film and their impact on the achievable spall depth range. Steady-state spall depth is found to increase with increasing stressor layer thickness and decrease with increasing residual stress. By tailoring residual stress through adjusting plating conditions and the electrolyte's phosphorous concentration, wide control over spall depth within Ge substrates from sub-micron to 76microm-thicknesses were achieved. To assess the viability of utilizing controlled spalling for substrate reuse, this dissertation demonstrates the first III-V solar cells (GaInAsP, Eg 1.7 eV) grown directly on a spalled-Ge substrate without any additional surface preparation. Widespread adoption of high-efficiency III-V solar cells has been limited by expensive deposition processes and high material cost of substrates. Substrate reuse offers a promising route towards enabling III-V devices to become cost-competitive for one-sun terrestrial applications. In this study, the quality of spalled Ge surfaces is characterized to assess lattice matching capability between the device layer materials and the substrate. GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were single-crystal in nature. III-V solar cells grown on spalled and pristine Ge substrates show nearly equivalent efficiency of 8%, despite the roughness of the spalled-Ge substrate. Principles of fractography were used to deduce that surface roughness originated from non-uniform crack propagation and mixed-mode loading during the spalling process.

High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

PubMed

Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

2015-11-01

High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrafast Fabrication of Flexible Dye-Sensitized Solar Cells by Ultrasonic Spray-Coating Technology

PubMed Central

Han, Hyun-Gyu; Weerasinghe, Hashitha C.; Min Kim, Kwang; Soo Kim, Jeong; Cheng, Yi-Bing; Jones, David J.; Holmes, Andrew B.; Kwon, Tae-Hyuk

2015-01-01

This study investigates novel deposition techniques for the preparation of TiO2 electrodes for use in flexible dye-sensitized solar cells. These proposed new methods, namely pre-dye-coating and codeposition ultrasonic spraying, eliminate the conventional need for time-consuming processes such as dye soaking and high-temperature sintering. Power conversion efficiencies of over 4.0% were achieved with electrodes prepared on flexible polymer substrates using this new deposition technology and N719 dye as a sensitizer. PMID:26420466

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2015-01-01

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micros to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, K. H.; Schneider, T. A.; Vaughn, J. A.; Hoang, B.; Wong, F.

2014-01-01

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 µs to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2014-01-01

Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems/Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four array currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission.

Solar Cells for Lunar Application

NASA Technical Reports Server (NTRS)

Freundlich, Alex; Ignatiev, Alex

1997-01-01

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

PubMed

Deng, Zhuo; Ning, Jiqiang; Su, Zhicheng; Xu, Shijie; Xing, Zheng; Wang, Rongxin; Lu, Shulong; Dong, Jianrong; Zhang, Baoshun; Yang, Hui

2015-01-14

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

Further study of inversion layer MIS solar cells

NASA Technical Reports Server (NTRS)

Ho, Fat Duen

1992-01-01

Many inversion layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. As of today, the best cell fabricated by us has a 9.138 percent AMO efficiency, with FF = 0.641, V(sub OC) = 0.557 V, and I(sub SC) = 26.9 micro A. Efforts made for fabricating an IL/MOS solar cell with reasonable efficiencies are reported. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved by using two different process methods. Comparison of these two different thin oxide processings is reported. The effects of annealing time of the sample are discussed. The range of the resistivity of the substrates used in the IL cell fabrication is experimentally estimated. Theoretical study of the MIS contacts under dark conditions is addressed.

Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

DOE PAGES

Dang, Hongmei; Singh, Vijay P.

2015-10-06

Using a 10 nm thick molybdenum oxide (MoO 3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO 3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm 2 to 7.69 Ω/cm 2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO 3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm 2 and efficiency of 8.67%. Our results demonstrate use of a thin layermore » transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.« less

Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil.

PubMed

Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R; Buecheler, Stephan; Tiwari, Ayodhya N

2013-01-01

Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Overview and Highlights of WOLEDs and Organic Solar Cells: From Research to Applications

NASA Astrophysics Data System (ADS)

Chan, Maggie Mei-Yee; Tao, Chi-Hang; Yam, Vivian Wing-Wah

Solid-state organic devices are at the vanguard of new generation of electronic components owing to their promise to be easily manufactured onto flexible substrates that potentially reduce the mass production cost for large modules. With the great efforts on improving the power efficiency that meets the realistic requirements for commercial applications, white organic light-emitting devices (WOLEDs) and organic solar cells have attracted much attention over the past two decades and are targeted as the effective ways for reducing the energy consumption and developing renewable energy in the world. Because of their great potentials to generate tremendous savings in both cost and energy usage, WOLEDs are considered as new generations of solid-state lighting sources to replace the incandescent bulbs, while organic solar cells are the most promising candidates to complement the inorganic silicon solar cells for electricity generation. Here, we will provide a survey on the recent developments of WOLEDs and organic solar cells and their current status in these fields. Resistances and hampers to the widespread acceptances of these two areas of developments are also discussed.

Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

NASA Astrophysics Data System (ADS)

Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M.; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R.; Buecheler, Stephan; Tiwari, Ayodhya N.

2013-08-01

Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Improved conversion efficiency in dye-sensitized solar cells based on electrospun Al-doped ZnO nanofiber electrodes prepared by seed layer treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun Sining, E-mail: alexsyun1974@yahoo.com.c; Lim, Sangwoo

2011-02-15

The application of electrospun nanofibers in electronic devices is limited due to their poor adhesion to conductive substrates. To improve this, a seed layer (SD) is introduced on the FTO substrate before the deposition of the electrospun composite nanofibers. This facilitates the release of interfacial tensile stress during calcination and enhances the interfacial adhesion of the AZO nanofiber films with the FTO substrate. Dye-sensitized solar cells (DSSC) based on these AZO nanofiber photoelectrodes have been fabricated and investigated. An energy conversion efficiency ({eta}) of 0.54-0.55% has been obtained under irradiation of AM 1.5 simulated sunlight (100 mW/cm{sup 2}), indicating amore » massive improvement of {eta} in the AZO nanofiber film DSSCs after SD-treatment of the FTO substrate as compared to those with no treatment. The SD-treatment has been demonstrated to be a simple and facile method to solve the problem of poor adhesion between electrospun nanofibers and the conductive substrate. -- Graphical abstract: The poor adhesion between electrospun nanofibers and substrate is improved by a simple and facile seed layer (SD) treatment. The energy conversion efficiency of AZO nanofiber-based DSSCs has been greatly increased by SD-treatment of the FTO substrate. Display Omitted Research highlights: {yields} A simple and facile method (SD-treatment) has been demonstrated. {yields} The poor adhesion between electrospun nanofibers and substrate is improved by the SD-treatment. {yields} The {eta} of AZO nanofiber-based DSSCs has been greatly improved by SD-treatment of the FTO substrate.« less

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

PubMed Central

Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

2015-01-01

Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability. PMID:27877804

Stability issues pertaining large area perovskite and dye-sensitized solar cells and modules

NASA Astrophysics Data System (ADS)

Castro-Hermosa, S.; Yadav, S. K.; Vesce, L.; Guidobaldi, A.; Reale, A.; Di Carlo, A.; Brown, T. M.

2017-01-01

Perovskite and dye-sensitized solar cells are PV technologies which hold promise for PV application. Arguably, the biggest issue facing these technologies is stability. The vast majority of studies have been limited to small area laboratory cells. Moisture, oxygen, UV light, thermal and electrical stresses are leading the degradation causes. There remains a shortage of stability investigations on large area devices, in particular modules. At the module level there exist particular challenges which can be different from those at the small cell level such as encapsulation (not only of the unit cells but of interconnections and contacts), non-uniformity of the layer stacks and unit cells, reverse bias stresses, which are important to investigate for technologies that aim for industrial acceptance. Herein we present a review of stability investigations published in the literature pertaining large area perovskite and dye-sensitized solar devices fabricated both on rigid (glass) and flexible substrates.

Modeling of thin, back-wall silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.

1979-01-01

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

Light-induced V{sub oc} increase and decrease in high-efficiency amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuckelberger, M., E-mail: michael.stuckelberger@epfl.ch; Riesen, Y.; Despeisse, M.

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (V{sub oc}) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the V{sub oc} increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclude varying the effective p-layer thickness as the cause of the substrate roughness dependence. Instead, we explain the observations by an increase of the dangling-bond density in both themore » p-layer—causing a V{sub oc} increase—and in the intrinsic absorber layer, causing a V{sub oc} decrease. We present a mechanism for the light-induced increase and decrease, justified by the investigation of light-induced changes of the p-layer and supported by Advanced Semiconductor Analysis simulation. We conclude that a shift of the electron quasi-Fermi level towards the conduction band is the reason for the observed V{sub oc} enhancements, and poor amorphous silicon quality on rough substrates enhances this effect.« less

Semitransparent organic solar cells with hybrid monolayer graphene/metal grid as top electrodes

NASA Astrophysics Data System (ADS)

Lin, Peng; Choy, Wallace C. H.; Zhang, Di; Xie, Fengxian; Xin, Jianzhuo; Leung, C. W.

2013-03-01

Hybrid transparent monolayer graphene/metal grid is proposed as top electrode of semitransparent organic solar cells. The hybrid electrode using gold grid on flexible polyethylene terephthalate substrate shows very low sheet resistance of 22 ± 3 Ω/□ and high optical transmittance of 81.4%, which is comparable to conventional indium tin oxide/glass electrode. Using lamination process, the layer of poly(3,4-ethylenedioythiophene):poly(styrenesulfonate) doped with D-sorbitol plays an important role in the electrical performance of the laminated devices. In addition, the devices show best power convention efficiency of 3.1% and fill factor of 55.0%, which are much better than those of similar graphene-based semitransparent organic solar cells.

Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

PubMed

Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

2018-05-01

The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

Building Integrated Photovoltaic Module-Based on Aluminum Substrate With Forced Water Cooling.

PubMed

Pang, Wei; Zhang, Yongzhe; Cui, Yanan; Yu, Hongwen; Liu, Yu; Yan, Hui

2018-04-01

The increase of operating temperature on a photovoltaic (PV) cell degrades its electrical efficiency. This paper is organized to describe our latest design of an aluminum substrate-based photovoltaic/thermal (PV/T) system. The electrical efficiency of the proposed PV/T can be increased by ∼ 20% in comparison with a conventional glass substrate-based PV. The work will benefit hybrid utilization of solar energy in development of building integrated photovoltaic systems.

Two-dimensional photonic crystal arrays for polymer:fullerene solar cells.

PubMed

Nam, Sungho; Han, Jiyoung; Do, Young Rag; Kim, Hwajeong; Yim, Sanggyu; Kim, Youngkyoo

2011-11-18

We report the application of two-dimensional (2D) photonic crystal (PC) array substrates for polymer:fullerene solar cells of which the active layer is made with blended films of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The 2D PC array substrates were fabricated by employing a nanosphere lithography technique. Two different hole depths (200 and 300 nm) were introduced for the 2D PC arrays to examine the hole depth effect on the light harvesting (trapping). The optical effect by the 2D PC arrays was investigated by the measurement of optical transmittance either in the direction normal to the substrate (direct transmittance) or in all directions (integrated transmittance). The results showed that the integrated transmittance was higher for the 2D PC array substrates than the conventional planar substrate at the wavelengths of ca. 400 nm, even though the direct transmittance of 2D PC array substrates was much lower over the entire visible light range. The short circuit current density (J(SC)) was higher for the device with the 2D PC array (200 nm hole depth) than the reference device. However, the device with the 2D PC array (300 nm hole depth) showed a slightly lower J(SC) value at a high light intensity in spite of its light harvesting effect proven at a lower light intensity.

Lightening Soldiers' Loads by Lifting PV Cells onto Flexible Surfaces |

Science.gov Websites

efficiency of cells grown on thick-glass substrates. Reese's challenge has been to combine the best of both CdTe solar cells on flexible glass. "When you grow a CdTe cell, you need to grow it for highest glass, which can withstand high temperatures, was promising, this approach had a drawback. Even flexible

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

2016-11-11

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

A continuous silicon-coating facility

NASA Technical Reports Server (NTRS)

Butter, C.; Heaps, J. D.

1979-01-01

Automatic continuous silicon-coating facility is used to process 100 by 10 cm graphite-coated ceramic substrates for silicon solar cells. Process reduces contamination associated with conventional dip-coating processes, improving material service life.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

NASA Astrophysics Data System (ADS)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

Optimized organic photovoltaics with surface plasmons

NASA Astrophysics Data System (ADS)

Omrane, B.; Landrock, C.; Aristizabal, J.; Patel, J. N.; Chuo, Y.; Kaminska, B.

2010-06-01

In this work, a new approach for optimizing organic photovoltaics using nanostructure arrays exhibiting surface plasmons is presented. Periodic nanohole arrays were fabricated on gold- and silver-coated flexible substrates, and were thereafter used as light transmitting anodes for solar cells. Transmission measurements on the plasmonic thin film made of gold and silver revealed enhanced transmission at specific wavelengths matching those of the photoactive polymer layer. Compared to the indium tin oxide-based photovoltaic cells, the plasmonic solar cells showed overall improvements in efficiency up to 4.8-fold for gold and 5.1-fold for the silver, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Simon, John; Schulte, Kevin L.

Hydride vapor phase epitaxy (HVPE) has recently reemerged as a low-cost, high-throughput alternative to metalorganic chemical vapor deposition (MOCVD) for the growth of high-efficiency III-V solar cells. Quaternary InGaAsP solar cells in the bandgap range of ~1.7-1.8 eV are promising top-cell candidates for integration in Ill-V/Si tandem cells with projected one-sun efficiencies exceeding 30%. In this work, we report on the development of lattice-matched InGaAsP solar cells grown on GaAs substrates via HVPE at very high growth rates of ~0.7 um/min. We demonstrate prototype 1.7 eV InGaAsP solar cells with an open-circuit voltage of 1.11 V. The short-circuit current ismore » limited by the lack of a window layer in these early stage devices. The photo response of 1.7 InGaAsP solar cell with ~1.1 um thick base layer is found to be nearly insensitive to variation in p-type base doping concentration in the range from Na - 4x1016 to - 1x1017 cm-3, indicating an effective carrier collection length on the order of - 1.1 um or higher in our devices. These initial InGaAsP cell results are encouraging and highlight the viability of HVPE to produce mixed arsenide-phosphide solar cells grown lattice-matched on GaAs.« less

Sb2S3 grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

PubMed Central

Katerski, Atanas; Oja Acik, Ilona; Mere, Arvo; Mikli, Valdek; Krunks, Malle

2016-01-01

Chemical spray pyrolysis (CSP) is a fast wet-chemical deposition method in which an aerosol is guided by carrier gas onto a hot substrate where the decomposition of the precursor chemicals occurs. The aerosol is produced using an ultrasonic oscillator in a bath of precursor solution and guided by compressed air. The use of the ultrasonic CSP resulted in the growth of homogeneous and well-adhered layers that consist of submicron crystals of single-phase Sb2S3 with a bandgap of 1.6 eV if an abundance of sulfur source is present in the precursor solution (SbCl3/SC(NH2)2 = 1:6) sprayed onto the substrate at 250 °C in air. Solar cells with glass-ITO-TiO2-Sb2S3-P3HT-Au structure and an active area of 1 cm2 had an open circuit voltage of 630 mV, short circuit current density of 5 mA/cm2, a fill factor of 42% and a conversion efficiency of 1.3%. Conversion efficiencies up to 1.9% were obtained from solar cells with smaller areas. PMID:28144515

New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer.

PubMed

Klinkert, T; Theys, B; Patriarche, G; Jubault, M; Donsanti, F; Guillemoles, J-F; Lincot, D

2016-10-21

Being at the origin of an ohmic contact, the MoSe 2 interfacial layer at the Mo/Cu(In,Ga)Se 2 interface in CIGS (Cu(In,Ga)Se 2 and related compounds) based solar cells has allowed for very high light-to-electricity conversion efficiencies up to 22.3%. This article gives new insights into the formation and the structural properties of this interfacial layer. Different selenization-steps of a Mo covered glass substrate prior to the CIGS deposition by co-evaporation led to MoSe 2 interfacial layers with varying thickness and orientation, as observed by x-ray diffraction and atomic resolution transmission electron microscopy. A novel model based on the anisotropy of the Se diffusion coefficient in MoSe 2 is proposed to explain the results. While the series resistance of finished CIGS solar cells is found to correlate with the MoSe 2 orientation, the adhesion forces between the CIGS absorber layer and the Mo substrate stay constant. Their counter-intuitive non-correlation with the configuration of the MoSe 2 interfacial layer is discussed and related to work from the literature.

Electrophoretic deposited TiO 2 pigment-based back reflectors for thin film solar cells

DOE PAGES

Bills, Braden; Morris, Nathan; Dubey, Mukul; ...

2015-01-16

Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO 2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectricmore » breakdown approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.« less

New infrared detectors and solar cells

NASA Technical Reports Server (NTRS)

Sher, A.

1979-01-01

The inventions and published papers related to the project are listed. The research with thin films of LaF3 deposited on GaAs substrates is reported along with improvements in photocapacitative MIS infrared detectors.

Application of solution-processed V2O5 in inverted polymer solar cells based on fluorine-doped tin oxide substrate.

PubMed

Wu, Jian; Zhang, Yupeng; He, Yeyuan; Liu, Chunyu; Guolt, Wenbin; Ruan, Shengping

2014-06-01

We used a hydrothermal method to synthesis the solution-processed V2O5 as anode buffer layer, which applied on inverted polymer solar cells based on FTO substrate. The structure of the device is glass/FTO/TiO2/P3HT:PCBM/V2O5/Ag. We discussed the dependence of device performance on the concentrations of V2O5 solution. It is found that when the concentration of V2O5 is 300 microg/ml, the power conversion efficiency (PCE of 2.38%) is the highest, which is much higher than that of the device without anode buffer layer (PCE of only 0.87%). Moreover, it can significantly reduce the energy consumption and make it more cost-effective.

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Ellis, R. J.

1978-01-01

A new calculation of the effects of thermal stresses during growth on silicon ribbon quality is reported. Thermal stress distributions are computed for ribbon growth under a variety of temperature profiles. A growth rate of 55 cu cm/min with a single ribbon was achieved. The growth of RTR ribbon with a fairly uniform parallel dendritic structure was demonstrated. Results with two approaches were obtained for reducing the Mo impurity level in polycrystalline feedstock. Coating the Mo substrate with Si3N4 does not effect thermal shear separation of the polyribbon; this process shows promise of improving cell efficiency and also increasing the useful life of the molybdenum substrate. A number of solar cells were fabricated on RTR silicon grown from CVD feedstock.

Metal catalyst technique for texturing silicon solar cells

DOEpatents

Ruby, Douglas S.; Zaidi, Saleem H.

2001-01-01

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

Structures with three dimensional nanofences comprising single crystal segments

DOEpatents

Goyal, Amit; Wee, Sung-Hun

2013-08-27

An article includes a substrate having a surface and a nanofence supported by the surface. The nanofence includes a multiplicity of primary nanorods and branch nanorods, each of the primary nanorods being attached to said substrate, and each of the branch nanorods being attached to a primary nanorods and/or another branch nanorod. The primary and branch nanorods are arranged in a three-dimensional, interconnected, interpenetrating, grid-like network defining interstices within the nanofence. The article further includes an enveloping layer supported by the nanofence, disposed in the interstices, and forming a coating on the primary and branch nanorods. The enveloping layer has a different composition from that of the nanofence and includes a radial p-n single junction solar cell photovoltaic material and/or a radial p-n multiple junction solar cell photovoltaic material.

Multilayer solar cell waveguide structures containing metamaterials

NASA Astrophysics Data System (ADS)

Hamouche, Houria.; Shabat, Mohammed. M.; Schaadt, Daniel M.

2017-01-01

Multilayer antireflection coating structures made from silicon and metamaterials are designed and investigated using the Transfer Matrix Method (TMM). The Transfer Matrix Method is a very useful algorithm for the analysis of periodic structures. We investigate in this paper two anti-reflection coating structures for silicon solar cells with a metamaterial film layer. In the first structure, the metamaterial film layer is sandwiched between a semi-infinite glass cover layer and a semi-infinite silicon substrate layer. The second structure consists of a four layers, a pair of metamaterial-dielectric layer with opposite real part of refractive indices, is placed between the two semi-infinite cover and substrate. We have simulated the absorptivity property of the structures for adjustable thicknesses by using MAPLE software. The absorptivity of the structures achieves greater than 80% for incident electromagnetic wave of transverse magnetic (TM) polarization.

Tuning the colors of c-Si solar cells by exploiting plasmonic effects

NASA Astrophysics Data System (ADS)

Peharz, G.; Grosschädl, B.; Prietl, C.; Waldhauser, W.; Wenzl, F. P.

2016-09-01

The color of a crystalline silicon (c-Si) solar cell is mainly determined by its anti-reflective coating. This is a lambda/4 coating made from a transparent dielectric material. The thickness of the anti-reflective coating is optimized for maximal photocurrent generation, resulting in the typical blue or black colors of c-Si solar cells. However, for building-integrated photovoltaic (BiPV) applications the color of the solar cells is demanded to be tunable - ideally by a cheap and flexible coating process on standard (low cost) c-Si solar cells. Such a coating can be realized by applying plasmonic coloring which is a rapidly growing technology for high-quality color filtering and rendering for different fields of application (displays, imaging,…). In this contribution, we present results of an approach for tuning the color of standard industrial c-Si solar cells that is based on coating them with metallic nano-particles. In particular, thin films (< 20 nm) of a metal (e.g., silver) were sputtered onto c-Si solar cells and thermally annealed subsequently. The sizes and the shapes of the nano-particles (characterized by SEM) were found to depend on the thickness of the deposited films and the surface roughness of the substrates/solar cells. With such an approach it is possible to tune the color of the standard c-Si cells from blue to green and brownish/red. The position of the resonance peak in the reflection spectrum was found to be almost independent from the angle of incidence. This low angular sensitivity is a clear advantage compared to alternative color tuning methods, for which additional dielectric thin films are deposited on c-Si solar cells.

Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

2017-10-01

In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator.

PubMed

Akama, Toshiki; Okita, Wakana; Nagai, Reito; Li, Chao; Kaneko, Toshiro; Kato, Toshiaki

2017-09-20

Few-layered transition metal dichalcogenides (TMDs) are known as true two-dimensional materials, with excellent semiconducting properties and strong light-matter interaction. Thus, TMDs are attractive materials for semitransparent and flexible solar cells for use in various applications. Hoewver, despite the recent progress, the development of a scalable method to fabricate semitransparent and flexible solar cells with mono- or few-layered TMDs remains a crucial challenge. Here, we show easy and scalable fabrication of a few-layered TMD solar cell using a Schottky-type configuration to obtain a power conversion efficiency (PCE) of approximately 0.7%, which is the highest value reported with few-layered TMDs. Clear power generation was also observed for a device fabricated on a large SiO 2 and flexible substrate, demonstrating that our method has high potential for scalable production. In addition, systematic investigation revealed that the PCE and external quantum efficiency (EQE) strongly depended on the type of photogenerated excitons (A, B, and C) because of different carrier dynamics. Because high solar cell performance along with excellent scalability can be achieved through the proposed process, our fabrication method will contribute to accelerating the industrial use of TMDs as semitransparent and flexible solar cells.

Preparation and characterization of ZnS thin films by the chemical bath deposition method (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ando, Shizutoshi; Iwashita, Taisuke

2017-06-01

Nowadays, the conversion efficiency of Cu(In･Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD. In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films. The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80° for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80° for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

Polymer substrates for flexible photovoltaic cells application in personal electronic system

NASA Astrophysics Data System (ADS)

Znajdek, K.; Sibiński, M.; Strąkowska, A.; Lisik, Z.

2016-01-01

The article presents an overview of polymeric materials for flexible substrates in photovoltaic (PV) structures that could be used as power supply in the personal electronic systems. Four types of polymers have been elected for testing. The first two are the most specialized and heat resistant polyimide films. The third material is transparent polyethylene terephthalate film from the group of polyesters which was proposed as a cheap and commercially available substrate for the technology of photovoltaic cells in a superstrate configuration. The last selected polymeric material is a polysiloxane, which meets the criteria of high elasticity, is temperature resistant and it is also characterized by relatively high transparency in the visible light range. For the most promising of these materials additional studies were performed in order to select those of them which represent the best optical, mechanical and temperature parameters according to their usage for flexible substrates in solar cells.

GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

NASA Technical Reports Server (NTRS)

Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

1984-01-01

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

DOE PAGES

Simon, John; Schulte, Kevin L.; Jain, Nikhil; ...

2016-10-19

Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of III-V solar cells. In this work, we show continued improvement of the performance of HVPE-grown single-junction GaAs solar cells. We show over an order of magnitude improvement in the interface recombination velocity between GaAs and GaInP layers through the elimination of growth interrupts, leading to increased short-circuit current density and open-circuit voltage compared with cells with interrupts. One-sun conversion efficiencies as high as 20.6% were achieved with this improved growth process. Solar cells grown in an inverted configuration that were removed frommore » the substrate showed nearly identical performance to on-wafer cells, demonstrating the viability of HVPE to be used together with conventional wafer reuse techniques for further cost reduction. As a result, these devices utilized multiple heterointerfaces, showing the potential of HVPE for the growth of complex and high-quality III-V devices.« less

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells.

PubMed

Cherrington, Ruth; Wood, Benjamin Michael; Salaoru, Iulia; Goodship, Vannessa

2016-05-04

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 µm thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm(2) and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 °C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 ˚C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

PubMed Central

Cherrington, Ruth; Wood, Benjamin Michael; Salaoru, Iulia; Goodship, Vannessa

2016-01-01

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 µm thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 °C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 ˚C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells. PMID:27166761

Hybrid Energy Cell with Hierarchical Nano/Micro-Architectured Polymer Film to Harvest Mechanical, Solar, and Wind Energies Individually/Simultaneously.

PubMed

Dudem, Bhaskar; Ko, Yeong Hwan; Leem, Jung Woo; Lim, Joo Ho; Yu, Jae Su

2016-11-09

We report the creation of hybrid energy cells based on hierarchical nano/micro-architectured polydimethylsiloxane (HNMA-PDMS) films with multifunctionality to simultaneously harvest mechanical, solar, and wind energies. These films consist of nano/micro dual-scale architectures (i.e., nanonipples on inverted micropyramidal arrays) on the PDMS surface. The HNMA-PDMS is replicable by facile and cost-effective soft imprint lithography using a nanoporous anodic alumina oxide film formed on the micropyramidal-structured silicon substrate. The HNMA-PDMS film plays multifunctional roles as a triboelectric layer in nanogenerators and an antireflection layer for dye-sensitized solar cells (DSSCs), as well as a self-cleaning surface. This film is employed in triboelectric nanogenerator (TENG) devices, fabricated by laminating it on indium-tin oxide-coated polyethylene terephthalate (ITO/PET) as a bottom electrode. The large effective contact area that emerged from the densely packed hierarchical nano/micro-architectures of the PDMS film leads to the enhancement of TENG device performance. Moreover, the HNMA-PDMS/ITO/PET, with a high transmittance of >90%, also results in highly transparent TENG devices. By placing the HNMA-PDMS/ITO/PET, where the ITO/PET is coated with zinc oxide nanowires, as the top glass substrate of DSSCs, the device is able to add the functionality of TENG devices, thus creating a hybrid energy cell. The hybrid energy cell can successfully convert mechanical, solar, and wind energies into electricity, simultaneously or independently. To specify the device performance, the effects of external pushing frequency and load resistance on the output of TENG devices are also analyzed, including the photovoltaic performance of the hybrid energy cells.

Development of advanced silicon solar cells for Space Station Freedom

NASA Technical Reports Server (NTRS)

Lillington, David R.

1990-01-01

This report describes the development of large area high efficiency wrapthrough solar cells for Space Station Freedom. The goal of this contract was the development and fabrication of 8 x 8 cm coplanar back contact solar cells with a minimum output of 1.039 watts/cell. The first task in this program was a modeling study to determine the optimum configuration of the cell and to study the effects of surface passivation, substrate resistivity, and back surface field on the BOL and EOL performance. In addition, the optical stack, including the cell cover, AR coatings, and Kapton blanket, was modeled to optimize 'on orbit' operation. The second phase was a manufacturing development phase to develop high volume manufacturing processes for the reliable production of low recombination velocity boron back surface fields, techniques to produce smooth, low leakage wrapthrough holes, passivation, photoresist application methods, and metallization schemes. The final portion of this program was a pilot production phase. Seven hundred solar cells were delivered in this phase. At the end of the program, cells with average efficiencies over 13 percent were being produced with power output in excess of 1.139 watts/cell, thus substantially exceeding the program goal.

Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

PubMed

Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

2016-07-29

Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

Electrical transport characterization of PEDOT:PSS/n-Si Schottky diodes and their applications in solar cells.

PubMed

Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon

2014-06-01

We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I(sc)), open circuit voltage (V(oc)), and conversion efficiency (eta) were - 19.7 mA/cm2, - 578.5 mV, and - 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT:PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

On the thermoelastic analysis of solar cell arrays and related material properties

NASA Technical Reports Server (NTRS)

Salama, M. A.; Bouquet, F. L.

1976-01-01

Accurate prediction of failure of solar cell arrays requires accuracy in the computation of thermally induced stresses. This was accomplished by using the finite element technique. Improved procedures for stress calculation were introduced together with failure criteria capable of describing a wide range of ductile and brittle material behavior. The stress distribution and associated failure mechanisms in the N-interconnect junction of two solar cell designs were then studied. In such stress and failure analysis, it is essential to know the thermomechanical properties of the materials involved. Measurements were made of properties of materials suitable for the design of lightweight arrays: microsheet-0211 glass material for the solar cell filter, and Kapton-H, Kapton F, Teflon, Tedlar, and Mica Ply PG-402 for lightweight substrates. The temperature-dependence of the thermal coefficient of expansion for these materials was determined together with other properties such as the elastic moduli, Poisson's ratio, and the stress-strain behavior up to failure.

A simple structure of Cu2ZnSnS4/CdS solar cells prepared by sputtering

NASA Astrophysics Data System (ADS)

Li, Zhishan; Wang, Shurong; Ma, Xun; Yang, Min; Jiang, Zhi; Liu, Tao; Lu, Yilei; Liu, Sijia

2017-12-01

In this work, Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by annealing of sputtered ZnS/Sn/CuS precursors at 580 ℃ for 15 min. As a try, the CZTS solar cells were fabricated using simple structure of Mo-coated SLG/CZTS/CdS/Al and traditional structure of Mo-coated SLG/CZTS/CdS/i-ZnO/In2O3:SnO2 (ITO)/Al, respectively. The results show that the CZTS device with simple structure can achieve same level of the open circuit voltage (Voc) compared with that of traditional structure. In addition, the power conversion efficiency of 2.95% and 3.59% were obtained with simple structure and traditional structure, respectively. The CZTS solar cell with simple structure provides a promising way and an easy process to prepare high-performance CZTS thin film solar cells which is available to large-scale industrial production in the future.

Interfacial micropore defect formation in PEDOT:PSS-Si hybrid solar cells probed by TOF-SIMS 3D chemical imaging.

PubMed

Thomas, Joseph P; Zhao, Liyan; Abd-Ellah, Marwa; Heinig, Nina F; Leung, K T

2013-07-16

Conducting p-type polymer layers on n-type Si have been widely studied for the fabrication of cost-effective hybrid solar cells. In this work, time-of-flight secondary ion mass spectrometry (TOF-SIMS) is used to provide three-dimensional chemical imaging of the interface between poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) and SiOx/Si in a hybrid solar cell. To minimize structural damage to the polymer layer, an Ar cluster sputtering source is used for depth profiling. The present result shows the formation of micropore defects in the interface region of the PEDOT:PSS layer on the SiOx/Si substrate. This interfacial micropore defect formation becomes more prominent with increasing thickness of the native oxide layer, which is a key device parameter that greatly affects the hybrid solar cell performance. Three-dimensional chemical imaging coupled with Ar cluster ion sputtering has therefore been demonstrated as an emerging technique for probing the interface of this and other polymer-inorganic systems.

Direct X-ray detection with hybrid solar cells based on organolead halide perovskites

NASA Astrophysics Data System (ADS)

Gill, Hardeep Singh; Elshahat, Bassem; Sajo, Erno; Kumar, Jayant; Kokil, Akshay; Zygmanski, Piotr; Li, Lian; Mosurkal, Ravi

2014-03-01

Organolead halide perovskite materials are attracting considerable interest due to their exceptional opto-electronic properties, such as, high charge carrier mobilities, high exciton diffusion length, high extinction coefficients and broad-band absorption. These interesting properties have enabled their application in high performance hybrid photovoltaic devices. The high Z value of their constituents also makes these materials efficient for absorbing X-rays. Here we will present on the efficient use of hybrid solar cells based on organolead perovskite materials as X-ray detectors. Hybrid solar cells based on CH3NH3PbI3 were fabricated using facile processing techniques on patterned indium tin oxide coated glass substrates. The solar cells typically had a planar configuration of ITO/CH3NH3PbI3/P3HT/Ag. High sensitivity for X-rays due to high Z value, larger carrier mobility and better charge collection was observed. Detecting X-rays with energies relevant to medical oncology applications opens up the potential for diagnostic imaging applications.

Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

NASA Astrophysics Data System (ADS)

Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

2018-04-01

A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

The electrical conductivity and energy band gap of ‘bunga belimbing buluh’/tio2 nanocrystals as hybrid solar cell

NASA Astrophysics Data System (ADS)

Kamarulzaman, N. H.; Salleh, H.; Ghazali, M. S. M.; Ghazali, S. M.; Ahmad, Z.

2018-05-01

This research intends to explore the effect of thickness of inorganic titania nanocrystals (TiO2 NCs) materials and Averrhoe bilimbi’s flower towards the electrical conductivity. Averrhoe bilimbi’s flower or also known as ‘bunga belimbing buluh’ was used for the first time as a natural dye in hybrid solar cells. The performance of electrical conductivity can be improved in bilayer heterojunction hybrid solar cell (HCS). The TiO2 NCs was deposited on the ITO substrate using Electrochemistry method at room temperature. The dye extracted from Averrhoe bilimbi’s flower was deposited on the top of TiO2 NCs layered using the same method. The electrical conductivity can be recorded using Four Point Probe (FPP) under dark and light radiation (range of 0 Wm-2 to 200Wm-2). From the results, electrical conductivity was increased by the increment light intensity and suitable for further solar cell fabrications.

Wrinkled substrate and Indium Tin Oxide-free transparent electrode making organic solar cells thinner in active layer

NASA Astrophysics Data System (ADS)

Liu, Kong; Lu, Shudi; Yue, Shizhong; Ren, Kuankuan; Azam, Muhammad; Tan, Furui; Wang, Zhijie; Qu, Shengchun; Wang, Zhanguo

2016-11-01

To enable organic solar cells with a competent charge transport efficiency, reducing the thickness of active layer without sacrificing light absorption efficiency turns out to be of high feasibility. Herein, organic solar cells on wrinkled metal surface are designed. The purposely wrinkled Al/Au film with a smooth surface provides a unique scaffold for constructing thin organic photovoltaic devices by avoiding pinholes and defects around sharp edges in conventional nanostructures. The corresponding surface light trapping effect enables the thin active layer (PTB7-Th:PC71BM) with a high absorption efficiency. With the innovative MoO3/Ag/ZnS film as the top transparent electrode, the resulting Indium Tin Oxide-free wrinkled devices show a power conversion efficiency as 7.57% (50 nm active layer), higher than the planner counterparts. Thus, this paper provides a new methodology to improve the performance of organic solar cells by balancing the mutual restraint factors to a high level.

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

NASA Astrophysics Data System (ADS)

Angermann, H.; Rappich, J.; Korte, L.; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, J.; Hauschild, J.

2008-04-01

Special sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of differently oriented silicon to prepare very smooth silicon interfaces with excellent electronic properties on mono- and poly-crystalline substrates. Surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations were utilised to develop wet-chemical smoothing procedures for atomically flat and structured surfaces, respectively. Hydrogen-termination as well as passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological processing. Compared to conventional pre-treatments, significantly lower micro-roughness and densities of surface states were achieved on mono-crystalline Si(100), on evenly distributed atomic steps, such as on vicinal Si(111), on silicon wafers with randomly distributed upside pyramids, and on poly-crystalline EFG ( Edge-defined Film-fed- Growth) silicon substrates. The recombination loss at a-Si:H/c-Si interfaces prepared on c-Si substrates with randomly distributed upside pyramids was markedly reduced by an optimised wet-chemical smoothing procedure, as determined by PL measurements. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with textured c-Si substrates the smoothening procedure results in a significant increase of short circuit current Isc, fill factor and efficiency η. The scatter in the cell parameters for measurements on different cells is much narrower, as compared to conventional pre-treatments, indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition and/or a higher stability of the c-Si surface against variations in the a-Si:H deposition conditions.

Space Station Freedom solar array containment box mechanisms

NASA Technical Reports Server (NTRS)

Johnson, Mark E.; Haugen, Bert; Anderson, Grant

1994-01-01

Space Station Freedom will feature six large solar arrays, called solar array wings, built by Lockheed Missiles & Space Company under contract to Rockwell International, Rocketdyne Division. Solar cells are mounted on flexible substrate panels which are hinged together to form a 'blanket.' Each wing is comprised of two blankets supported by a central mast, producing approximately 32 kW of power at beginning-of-life. During launch, the blankets are fan-folded and compressed to 1.5 percent of their deployed length into containment boxes. This paper describes the main containment box mechanisms designed to protect, deploy, and retract the solar array blankets: the latch, blanket restraint, tension, and guidewire mechanisms.

A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

NASA Technical Reports Server (NTRS)

Faur, M.; Faur, M.; Flood, D. J.; Weinberg, I.; Brinker, D. J.; Goradia, C.; Fatemi, N.; Goradia, M.; Thesling, W.

1991-01-01

The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.