Temperature, inocula and substrate: Contrasting electroactive consortia, diversity and performance in microbial fuel cells.

PubMed

Heidrich, E S; Dolfing, J; Wade, M J; Sloan, W T; Quince, C; Curtis, T P

2018-02-01

The factors that affect microbial community assembly and its effects on the performance of bioelectrochemical systems are poorly understood. Sixteen microbial fuel cell (MFC) reactors were set up to test the importance of inoculum, temperature and substrate: Arctic soil versus wastewater as inoculum; warm (26.5°C) versus cold (7.5°C) temperature; and acetate versus wastewater as substrate. Substrate was the dominant factor in determining performance and diversity: unexpectedly the simple electrogenic substrate delivered a higher diversity than a complex wastewater. Furthermore, in acetate fed reactors, diversity did not correlate with performance, yet in wastewater fed ones it did, with greater diversity sustaining higher power densities and coulombic efficiencies. Temperature had only a minor effect on power density, (Q 10 : 2 and 1.2 for acetate and wastewater respectively): this is surprising given the well-known temperature sensitivity of anaerobic bioreactors. Reactors were able to operate at low temperature with real wastewater without the need for specialised inocula; it is speculated that MFC biofilms may have a self-heating effect. Importantly, the warm acetate fed reactors in this study did not act as direct model for cold wastewater fed systems. Application of this technology will encompass use of real wastewater at ambient temperatures. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

NASA Technical Reports Server (NTRS)

Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

1992-01-01

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Hydrogen isotope fractionation during lipid biosynthesis by Haloarcula marismortui

NASA Astrophysics Data System (ADS)

Dirghangi, Sitindra S.; Pagani, Mark

2013-10-01

We studied the controls on the fractionation of hydrogen isotopes during lipid biosynthesis by Haloarcula marismortui, a halophilic archaea, in pure culture experiments by varying organic substrate, the hydrogen isotope composition (D/H) of water, temperature, and salinity. Cultures were grown on three substrates: succinate, pyruvate and glycerol with known hydrogen isotope compositions, and in water with different hydrogen isotopic compositions. All culture series grown on a particular substrate show strong correlations between δDarchaeol and δDwater. However, correlations are distinctly different for cultures grown on different substrates. Our results indicate that the metabolic pathway of substrate exerts a fundamental influence on the δD value of lipids, likely by influencing the D/H composition of NADPH (nicotinamide adenine dinucleotide phosphate), the reducing agent that contributes hydrogen to carbon atoms during lipid biosynthesis. Temperature and salinity have smaller, but similar effects on δDlipid, primarily due to the way temperature and salinity influence growth rate, as well as temperature effects on the activity of enzymes.

Wettability of eutectic NaLiCO3 salt on magnesium oxide substrates at 778 K

NASA Astrophysics Data System (ADS)

Li, Chuan; Li, Qi; Cao, Hui; Leng, Guanghui; Li, Yongliang; Wang, Li; Zheng, Lifang; Ding, Yulong

2018-06-01

We investigated the wetting behavior of a eutectic carbonate salt of NaLiCO3 on MgO substrates at an elevated temperature of 778 K by measuring contact angle with a sessile drop method. Both sintered and non-sintered MgO were prepared and used as the substrates. The sintered substrates were obtained by sintering compacted MgO powders at 500-1300 °C. For comparison purposes, a single crystal MgO substrate was also used in the work. The different sintering temperatures provided MgO substrates with different structures, allowing their effects on salt penetration and hence wettability and surface energy to be investigated. A scanning electron microscope equipped with energy dispersive spectrometry and an atomic force microscope were used to observe the morphology and structures of the MgO substrates as well as the salt penetration. The results showed a good wettability of the carbonate salt on both the sintered and non-sintered MgO substrates and the wettability depended strongly on the structure of the substrates. The non-sintered MgO substrate has a loose surface particle packing with large pores and crevices, leading to significant salt infiltration, and the corresponding contact angle was measured to be ∼25°. The contact angle of the salt on the sintered MgO substrates increased with an increase in the sintering temperature of the MgO substrate, and the contact angle of the salt on the single crystal substrate was the highest at ∼40°. The effect of the sintering temperature for making the MgO substrate could be linked to the surface energy, and the linkage is validated by the AFM measurements of the adhesion forces of the MgO substrates.

Fiber Bragg grating cryogenic temperature sensors

NASA Astrophysics Data System (ADS)

Gupta, Sanjay; Mizunami, Toru; Yamao, Takashi; Shimomura, Teruo

1996-09-01

Temperature sensing to as low as 80 K was demonstrated with 1.55- mu m fiber Bragg gratings. The gratings were bonded on substrates to increase sensitivity, and a shift of the reflection wavelength was measured. The temperature sensitivity was 0.02 nm/K at 100 K when an aluminum substrate was used and 0.04 nm/K at 100 K when a poly(methyl methacrylate) substrate was used. These values are smaller than those at room temperature because of the nonlinearity of both the thermal expansion and the thermo-optic effect. Extension to the liquid helium temperature is also discussed.

The Influence of Pre-Heated Treatment to Improve Adhesion Bond Coating Strength of Fly Ash Based Geopolymer Ceramic

NASA Astrophysics Data System (ADS)

Jamaludin, L.; Abdullah, M. M. A. B.; Hussin, K.; Kadir, A. Abdul

2018-06-01

The study focus on effect of pre-heated ceramic surface on the adhesion bond strength between geopolymer coating coating and ceramic substrates. Ceramic substrates was pre-heated at different temperature (400 °C, 600 °C, 800 °C and 1000 °C). Fly ash geopolymer coating material potential used to protect surface used in exposure conditions after sintering at high temperature. Fly ash and alkali activator (Al2O3/Na2SiO3) were mixed with 2.0 solids-to-liquid ratios to prepare geopolymer coating material at constant NaOH concentration of 12M. Adhesion test was conducted to determine the adhesion bond between ceramic substrates and fly ash coating material. The results showed the pre-heated ceramic substrates effect the adhesion bond of coating compared with untreated substrates with increasing of strength up to 20 % for temperature 600 °C.

Substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chung, Seungjun; Lee, Jae-Hyun; Jeong, Jaewook; Kim, Jang-Joo; Hong, Yongtaek

2009-06-01

We report substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes (OLEDs). Heat dissipation behavior of top-emission OLEDs fabricated on silicon, glass, and planarized stainless steel substrates was measured by using an infrared camera. Peak temperature measured from the backside of each substrate was saturated to be 21.4, 64.5, and 40.5 °C, 180 s after the OLED was operated at luminance of 10 000 cd/m2 and 80% luminance lifetime was about 198, 31, and 96 h, respectively. Efficient heat dissipation through the highly thermally conductive substrates reduced temperature increase, resulting in much improved OLED lifetime.

Influence of solidification on the impact of supercooled water drops onto cold surfaces

NASA Astrophysics Data System (ADS)

Li, Hai; Roisman, Ilia V.; Tropea, Cameron

2015-06-01

This study presents an experimental investigation of the impact of a supercooled drop onto hydrophilic and superhydrophobic substrates. The aim is to better understand the process of airframe icing caused by supercooled large droplets, which has been recently identified as a severe hazard in aviation. The Weber number and Reynolds number of the impinging drop ranged from 200 to 300 and from 2600 to 5800, respectively. Drop impact, spreading, and rebound were observed using a high-speed video system. The maximum spreading diameter of an impacting drop on hydrophilic surfaces was measured. The temperature effect on this parameter was only minor for a wide range of the drop and substrate temperatures. However, ice/water mixtures emerged when both the drop and substrate temperatures were below 0 °C. Similarly, drop rebound on superhydrophobic substrates was significantly hindered by solidification when supercooled drop impacted onto substrates below the freezing point. The minimum receding diameter and the speed of ice accretion on the substrate were measured for various wall temperatures. Both parameters increased almost linearly with decreasing wall temperature, but eventually leveled off beyond a certain substrate temperature. The rate of ice formation on the substrate was significantly higher than the growth rate of free ice dendrites, implying that multiple nucleation sites were present.

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo

2013-12-02

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore » of 609 cm{sup 2} V{sup −1} s{sup −1}.« less

Influence of temperature on the hydrolysis, acidogenesis and methanogenesis in mesophilic anaerobic digestion: parameter identification and modeling application.

PubMed

Donoso-Bravo, A; Retamal, C; Carballa, M; Ruiz-Filippi, G; Chamy, R

2009-01-01

The effect of temperature on the kinetic parameters involved in the main reactions of the anaerobic digestion process was studied. Batch tests with starch, glucose and acetic acid as substrates for hydrolysis, acidogenesis and methanogenesis, respectively, were performed in a temperature range between 15 and 45 degrees C. First order kinetics was assumed to determine the hydrolysis rate constant, while Monod and Haldane kinetics were considered for acidogenesis and methanogenesis, respectively. The results obtained showed that the anaerobic process is strongly influenced by temperature, with acidogenesis exerting the highest effect. The Cardinal Temperature Model 1 with an inflection point (CTM1) fitted properly the experimental data in the whole temperature range, except for the maximum degradation rate of acidogenesis. A simple case-study assessing the effect of temperature on an anaerobic CSTR performance indicated that with relatively simple substrates, like starch, the limiting reaction would change depending on temperature. However, when more complex substrates are used (e.g. sewage sludge), the hydrolysis might become more quickly into the limiting step.

Full-field measurement of surface topographies and thin film stresses at elevated temperatures by digital gradient sensing method.

PubMed

Zhang, Changxing; Qu, Zhe; Fang, Xufei; Feng, Xue; Hwang, Keh-Chih

2015-02-01

Thin film stresses in thin film/substrate systems at elevated temperatures affect the reliability and safety of such structures in microelectronic devices. The stresses result from the thermal mismatch strain between the film and substrate. The reflection mode digital gradient sensing (DGS) method, a real-time, full-field optical technique, measures deformations of reflective surface topographies. In this paper, we developed this method to measure topographies and thin film stresses of thin film/substrate systems at elevated temperatures. We calibrated and compensated for the air convection at elevated temperatures, which is a serious problem for optical techniques. We covered the principles for surface topography measurements by the reflection mode DGS method at elevated temperatures and the governing equations to remove the air convection effects. The proposed method is applied to successfully measure the full-field topography and deformation of a NiTi thin film on a silicon substrate at elevated temperatures. The evolution of thin film stresses obtained by extending Stoney's formula implies the "nonuniform" effect the experimental results have shown.

Effect of substrate preheating treatment on the microstructure and ultrasonic cavitation erosion behavior of plasma-sprayed YSZ coatings.

PubMed

Deng, Wen; An, Yulong; Hou, Guoliang; Li, Shuangjian; Zhou, Huidi; Chen, Jianmin

2018-09-01

Inconel 718 was used as the substrate and preheated at different temperatures to deposit yttrium stabilized zirconia (denoted as YSZ) coatings by atmospheric plasma spraying. The microstructure of the as-deposited YSZ coatings and those after cavitation-erosion tests were characterized by field emission scanning electron microscopy, Raman spectroscopy, and their hardness and toughness as well as cavitation-erosion resistance were evaluated in relation to the effect of substrate preheating temperature. Results indicate that the as-deposited YSZ coatings exhibit typical layered structure and consist of columnar crystals. With the increase of the substrate preheating temperature, the compactness and cohesion strength of coatings are obviously enhanced, which result in the increases in the hardness, elastic modulus and toughness as well as cavitation-erosion resistance of the ceramic coatings therewith. Particularly, the YSZ coating deposited at a substrate preheating temperature of 800 °C exhibits the highest hardness and toughness as well as the strongest lamellar interfacial bonding and cavitation-erosion resistance (its cavitation-erosion life is as much as 8 times than that of deposited at room temperature). Copyright © 2018 Elsevier B.V. All rights reserved.

Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

2015-09-01

The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

Low Friction Droplet Transportation on a Substrate with a Selective Leidenfrost Effect.

PubMed

Dodd, Linzi E; Wood, David; Geraldi, Nicasio R; Wells, Gary G; McHale, Glen; Xu, Ben B; Stuart-Cole, Simone; Martin, James; Newton, Michael I

2016-08-31

An energy saving Leidenfrost levitation method is introduced to transport microdroplets with virtually frictionless contact between the liquid and solid substrate. Through microengineering of the heating units, selective areas of the whole substrate can be electrothermally activated. A droplet can be levitated as a result of the Leidenfrost effect and further transported when the substrate is tilted slightly. Selective electroheating produces a uniform temperature distribution on the heating units within 1 s in response to a triggering voltage. Alongside these experimental observations, finite element simulations were conducted to understand the role of substrate thermal conductivity on the temperature profile of the selectively heated substrate. We also generated phase diagrams to verify the Leidenfrost regime for different substrate materials. Finally, we demonstrated the possibility of controlling low friction high speed droplet transportation (∼65 mm/s) when the substrate is tilted (∼7°) by structurally designing the substrate. This work establishes the basis for an entirely new approach to droplet microfluidics.

Effect of substrate preheating temperature and coating thickness on residual stress in plasma sprayed hydroxyapatite coating

NASA Astrophysics Data System (ADS)

Tang, Dapei

2015-07-01

A thermal-mechanical coupling model was developed based on thermal-elastic- plastic theory according the special process of plasma spraying Hydroxyapatite (HA) coating upon Ti-6Al-4V substrate. On the one hand, the classical Fourier transient heat conduction equation was modified by introducing the effect item of deformation on temperature, on the other hand, the Johnson-Cook model, suitable for high temperature and high strain rate conditions, was used as constitutive equation after considering temperature softening effect, strain hardening effect and strain rate reinforcement effect. Based on the above coupling model, the residual stress field within the HA coating was simulated by using finite element method (FEM). Meanwhile, the substrate preheating temperature and coating thickness on the influence of residual stress components were calculated, respectively. The failure modes of coating were also preliminary analyzed. In addition, in order to verify the reliability of calculation, the material removal measurement technique was applied to determine the residual stress of HA coating near the interface. Some important conclusions are obtained.

The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)0.85(TiO2)0.15 films

NASA Astrophysics Data System (ADS)

Sekhar, M. Chandra; Uthanna, S.; Martins, R.; Jagadeesh Chandra, S. V.; Elangovan, E.

2012-04-01

Thin films of (Ta2O5)0.85(TiO2)0.15 were deposited on quartz and p-Si substrates by DC reactive magnetron sputtering at different substrate temperatures (Ts) in the range 303 - 873 K. The films deposited at 303 0K were in the amorphous and it transformed to crystalline at substrate temperatures >= 573 0K. The crystallite size was increased from 50 nm to 72 nm with the increase of substrate temperature. The surface morphology was significantly influenced with the substrate temperature. After deposition of the (Ta2O5)0.85(TiO2)0.15 films on Si, aluminium (Al) electrode was deposited to fabricate metal/oxide/semiconductor (MOS) capacitors with a configuration of Al/(Ta2O5)0.85(TiO2)0.15/Si. A low leakage current of 7.7 × 10-5 A/cm2 was obtained from the films deposited at 303 K. The leakage current was decreased to 9.3 × 10-8 A/cm2 with the increase of substrate temperature owing to structural changes. The conduction mechanism of the Al/(Ta2O5)0.85(TiO2)0.15/Si capacitors was analyzed and compared with mechanisms of Poole-Frenkel and Schottky emissions. The optical band gap (Eg) was decreased from 4.45 eV to 4.38 eV with the increase in substrate temperature.

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

NASA Astrophysics Data System (ADS)

Linh, Dang Khanh; Khanh, Nguyen Quoc

2018-03-01

We calculate the zero-temperature conductivity of bilayer graphene (BLG) impacted by Coulomb impurity scattering using four different screening models: unscreened, Thomas-Fermi (TF), overscreened and random phase approximation (RPA). We also calculate the conductivity and thermal conductance of BLG using TF, zero- and finite-temperature RPA screening functions. We find large differences between the results of the models and show that TF and finite-temperature RPA give similar results for diffusion thermopower Sd. Using the finite-temperature RPA, we calculate temperature and density dependence of Sd in BLG on SiO2, HfO2 substrates and suspended BLG for different values of interlayer distance c and distance between the first layer and the substrate d.

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

NASA Astrophysics Data System (ADS)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

Motor-substrate interactions in mycoplasma motility explains non-Arrhenius temperature dependence.

PubMed

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-12-02

Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by approximately 400 "leg" proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10-40 degrees C. This corresponds to an Arrhenius factor that decreases from approximately 45 k(B)T at 10 degrees C to approximately 10 k(B)T at 40 degrees C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction.

Motor-Substrate Interactions in Mycoplasma Motility Explains Non-Arrhenius Temperature Dependence

PubMed Central

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-01-01

Abstract Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by ∼400 “leg” proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10–40°C. This corresponds to an Arrhenius factor that decreases from ∼45 kBT at 10°C to ∼10 kBT at 40°C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction. PMID:19948122

The Effect of Molybdenum Substrate Oxidation on Molybdenum Splat Formation

NASA Astrophysics Data System (ADS)

Wang, Jun; Li, Chang-Jiu

2018-01-01

Disk splats are usually observed when the deposition temperature exceeds the transition temperature, whereas thick oxide layer will reduce the adhesion resulting from high deposition temperature. In present study, single molybdenum splats were deposited onto polished molybdenum substrates with different preheating processes to clarify the effect of surface oxidation on the splat formation. Three substrate samples experienced three different preheating processes in an argon atmosphere. Two samples were preheated to 350 and 550 °C, and another sample was cooled to 350 °C after it was preheated to 550 °C. The chemistry and compositions of substrate surface were examined by XPS. The cross sections of splats were prepared by focus ion beam (FIB) and then characterized by SEM. Nearly disk-shaped splat with small fingers in the periphery was observed on the sample preheated to 350 °C. A perfect disk-shape splat was deposited at 550 °C. With the sample on the substrate preheated to 350 °C (cooling down from 550 °C), flower-shaped splat exhibited a central core and discrete periphery detached by some voids. The results of peeling off splats by carbon tape and the morphology of FIB sampled cross sections indicated that no effective bonding formed at the splat-substrate interface for the substrate ever heated to 550 °C, due to the increasing content of MoO3 on the preheated molybdenum surface.

Athermalization of resonant optical devices via thermo-mechanical feedback

DOEpatents

Rakich, Peter; Nielson, Gregory N.; Lentine, Anthony L.

2016-01-19

A passively athermal photonic system including a photonic circuit having a substrate and an optical cavity defined on the substrate, and passive temperature-responsive provisions for inducing strain in the optical cavity of the photonic circuit to compensate for a thermo-optic effect resulting from a temperature change in the optical cavity of the photonic circuit. Also disclosed is a method of passively compensating for a temperature dependent thermo-optic effect resulting on an optical cavity of a photonic circuit including the step of passively inducing strain in the optical cavity as a function of a temperature change of the optical cavity thereby producing an elasto-optic effect in the optical cavity to compensate for the thermo-optic effect resulting on an optical cavity due to the temperature change.

The Catalytic Function of Enzymes.

ERIC Educational Resources Information Center

Splittgerber, Allan G.

1985-01-01

Discusses: structure of the enzyme molecule; active site; reaction mechanism; transition state; factors affecting enzyme reaction rates, concentration of enzyme; concentration of substrate; product concentration; temperature effects and pH effects; factors causing a lowering of activation energy; proximity and orientation effects; substrate strain…

Thermal-structural modeling of polymer Bragg grating waveguides illuminated by a light emitting diode.

PubMed

Joon Kim, Kyoung; Bar-Cohen, Avram; Han, Bongtae

2012-02-20

This study reports both analytical and numerical thermal-structural models of polymer Bragg grating (PBG) waveguides illuminated by a light emitting diode (LED). A polymethyl methacrylate (PMMA) Bragg grating (BG) waveguide is chosen as an analysis vehicle to explore parametric effects of incident optical powers and substrate materials on the thermal-structural behavior of the BG. Analytical models are verified by comparing analytically predicted average excess temperatures, and thermally induced axial strains and stresses with numerical predictions. A parametric study demonstrates that the PMMA substrate induces more adverse effects, such as higher excess temperatures, complex axial temperature profiles, and greater and more complicated thermally induced strains in the BG compared with the Si substrate. © 2012 Optical Society of America

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Effects of tip-substrate gap, deposition temperature, holding time, and pull-off velocity on dip-pen lithography investigated using molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Wu, Cheng-Da; Fang, Te-Hua; Lin, Jen-Fin

2012-05-01

The process parameters in the dip-pen nanolithography process, including tip-substrate gap, deposition temperature, holding time, and pull-off velocity are evaluated in terms of the mechanism of molecular transference, alkanethiol meniscus characteristic, surface adsorbed energy, and pattern formation using molecular dynamics simulations. The simulation results clearly show that the optimum deposition occurs at a smaller tip-substrate gap, a slower pull-off velocity, a higher temperature, and a longer holding time. The pattern area increases with decreasing tip-substrate gap and increasing deposition temperature and holding time. With an increase in deposition temperature, the molecular transfer ability significantly increases. Pattern height is a function of meniscus length. When the pull-off velocity is decreased, the pattern height increases. The height of the neck in meniscus decreases and the neck width increases with holding time. Meniscus size increases with increasing deposition temperature and holding time.

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

DTIC Science & Technology

2011-04-30

IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

PubMed

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Effect of tacticity on the structure and glass transition temperature of polystyrene adsorbed onto solid surfaces

NASA Astrophysics Data System (ADS)

Negash, Solomon; Tatek, Yergou B.; Tsige, Mesfin

2018-04-01

We have carried out atomistic (all-atom) molecular dynamics simulations to investigate the effect of tacticity on the structure and glass transition temperature (Tg) of polystyrene (PS) thin films adsorbed on two distinct types of solid substrates. The systems consist of thin films made of atactic, isotactic, and syndiotactic PS chains supported by graphite or hydroxylated α-quartz substrates, which are known to be atomically flat but chemically and structurally different. We have observed a marked dependence of the film structure on substrate type as well as on tacticity. For instance, rings' orientation near substrate surfaces depends on substrate type for atactic PS and isotactic PS films, while no such dependence is observed for syndiotactic PS films whose interfacial structure seems to result from their propensity to adopt the trans conformation rather than their specific interaction with the substrates. Moreover, our results indicate that glass transition temperatures of substrate supported polystyrene films are higher compared to those of the corresponding free-standing films. More specifically, PS films on graphite exhibit larger Tg values than those on α-quartz, and we have noticed that syndiotactic PS has the largest Tg irrespective of the substrate type. Furthermore, the local Tg in the region of the film in contact with the substrates shows a strong tacticity and substrate dependence, whereas no dependencies were found for the local Tg in the middle of the film. Substrate-film interaction energy and chains' dynamics near substrate-film interfaces were subsequently investigated in order to substantiate the obtained Tgs, and it was found that films with higher Tgs are strongly adsorbed on the substrates and/or exhibit smaller interfacial chains' dynamics essentially due to steric hindrance.

Effects of substrate temperatures and deposition rates on properties of aluminum fluoride thin films in deep-ultraviolet region.

PubMed

Sun, Jian; Li, Xu; Zhang, Weili; Yi, Kui; Shao, Jianda

2012-12-10

Aluminum fluoride (AlF(3)) is a low-refractive-index material widely used in coatings for deep-ultraviolet (DUV) optical systems, especially 193 nm laser systems. Low optical loss and stability are essential for film application. In this study, AlF(3)> thin films were prepared by thermal evaporation with a resistive heating boat. The effects of substrate temperatures and deposition rates on the optical properties in vacuum and in air, composition, and microstructures were discussed respectively. In vacuum the deposition parameters directly influenced the microstructures that determined the refractive index. When the films were exposed to air, aluminum oxide (Al(2)O(3)) formed in the films with water adsorption. Thus the refractive index increased and a nonmonotonic changing trend of the refractive index with substrate temperature was observed. The Al(2)O(3) was also found to be conductive to reducing absorption loss. AlF(3) films prepared at a high substrate temperature and deposition rate could yield stable structures with large optical loss.

Spatial environmental heterogeneity affects plant growth and thermal performance on a green roof.

PubMed

Buckland-Nicks, Michael; Heim, Amy; Lundholm, Jeremy

2016-05-15

Green roofs provide ecosystem services, including stormwater retention and reductions in heat transfer through the roof. Microclimates, as well as designed features of green roofs, such as substrate and vegetation, affect the magnitude of these services. Many green roofs are partially shaded by surrounding buildings, but the effects of this within-roof spatial environmental heterogeneity on thermal performance and other ecosystem services have not been examined. We quantified the effects of spatial heterogeneity in solar radiation, substrate depth and other variables affected by these drivers on vegetation and ecosystem services in an extensive green roof. Spatial heterogeneity in substrate depth and insolation were correlated with differential growth, survival and flowering in two focal plant species. These effects were likely driven by the resulting spatial heterogeneity in substrate temperature and moisture content. Thermal performance (indicated by heat flux and substrate temperature) was influenced by spatial heterogeneity in vegetation cover and substrate depth. Areas with less insolation were cooler in summer and had greater substrate moisture, leading to more favorable conditions for plant growth and survival. Spatial variation in substrate moisture (7%-26% volumetric moisture content) and temperature (21°C-36°C) during hot sunny conditions in summer could cause large differences in stormwater retention and heat flux within a single green roof. Shaded areas promote smaller heat fluxes through the roof, leading to energy savings, but lower evapotranspiration in these areas should reduce stormwater retention capacity. Spatial heterogeneity can thus result in trade-offs between different ecosystem services. The effects of these spatial heterogeneities are likely widespread in green roofs. Structures that provide shelter from sun and wind may be productively utilized to design higher functioning green roofs and increase biodiversity by providing habitat heterogeneity. Copyright © 2016 Elsevier B.V. All rights reserved.

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

PubMed

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

NASA Astrophysics Data System (ADS)

García, S.; Íñiguez-de-la-Torre, I.; Mateos, J.; González, T.; Pérez, S.

2016-06-01

In this paper, we present results from the simulations of a submicrometer AlGaN/GaN high-electron-mobility transistor (HEMT) by using an in-house electro-thermal Monte Carlo simulator. We study the temperature distribution and the influence of heating on the transfer characteristics and the transconductance when the device is grown on different substrates (sapphire, silicon, silicon carbide and diamond). The effect of the inclusion of a thermal boundary resistance (TBR) is also investigated. It is found that, as expected, HEMTs fabricated on substrates with high thermal conductivities (diamond) exhibit lower temperatures, but the difference between hot-spot and average temperatures is higher. In addition, devices fabricated on substrates with higher thermal conductivities are more sensitive to the value of the TBR because the temperature discontinuity is greater in the TBR layer.

Temperature Dependent Performance of Coplanar Waveguide (CPW) on Substrates of Various Materials

NASA Technical Reports Server (NTRS)

Taub, Susan R.; Young, Paul

1994-01-01

The attenuation (a) and effective dielectric constant (E(sub eff)) of Coplanar Waveguide (CPW) transmission lines on high-resistivity silicon and diamond substrates as a function of both temperature and frequency are presented. The technique used to obtain the values for a and E(sub eff) involves the use of a unique cryogenic probe station designed and built by NASA. Attenuation of gold CPW lines on diamond substrates is compared with that of superconducting CPW lines.

The effects of substrate supply on the temperature sensitivity of soil carbon decomposition

Treesearch

Cinzia Fissore; Christian P. Giardina; Randall K. Kolka

2013-01-01

Controls on the decomposition rate of soil organic carbon (SOC), especially the more stable fraction of SOC, remain poorly understood, with implications for confidence in efforts to model terrestrial C balance under future climate. We investigated the role of substrate supply in the temperature sensitivity of SOC decomposition in laboratory incubations of coarse-...

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination

DOEpatents

Sopori, Bhushan L.

1993-01-01

Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

Self-Sorting of Bidispersed Colloidal Particles Near Contact Line of an Evaporating Sessile Droplet.

PubMed

Patil, Nagesh D; Bhardwaj, Rajneesh; Sharma, Atul

2018-06-13

Here, we investigate deposit patterns and associated morphology formed after the evaporation of an aqueous droplet containing mono- and bidispersed colloidal particles. In particular, the combined effect of substrate heating and particle diameter is investigated. We employ high-speed visualization, optical microscopy, and scanning electron microscopy to characterize the evaporating droplets, particle motion, and deposit morphology, respectively. In the context of monodispersed colloidal particles, an inner deposit and a typical ring form for smaller and larger particles, respectively, on a nonheated surface. The formation of the inner deposit is attributed to early depinning of the contact line, explained by a mechanistic model based on the balance of several forces acting on a particle near the contact line. At larger substrate temperature, a thin ring with inner deposit forms, explained by the self-pinning of the contact line and advection of the particles from the contact line to the center of the droplet due to the Marangoni flow. In the context of bidispersed colloidal particles, self-sorting of the colloidal particles within the ring occurs at larger substrate temperature. The smaller particles deposit at the outermost edge compared to the larger particles, and this preferential deposition in a stagnation region near the contact line is due to the spatially varying height of the liquid-gas interface above the substrate. The sorting occurs at a smaller ratio of the diameters of the smaller and larger particles. At larger substrate temperature and larger ratio, the particles do not get sorted and mix into each other. Our measurements show that there exists a critical substrate temperature as well as a diameter ratio to achieve the sorting. We propose regime maps on substrate temperature-particle diameter and substrate temperature-diameter ratio plane for mono- and bidispersed solutions, respectively.

Using copper substrate to enhance the thermal conductivity of top-emission organic light-emitting diodes for improving the luminance efficiency and lifetime

NASA Astrophysics Data System (ADS)

Tsai, Yu-Sheng; Wang, Shun-Hsi; Chen, Chuan-Hung; Cheng, Chien-Lung; Liao, Teh-Chao

2009-12-01

The influence of heat dissipation on the performances of organic light-emitting diode (OLED) is investigated by measuring junction temperature and by calculating the rate of heat flow. The calculated rate of heat flow reveals that the key factors include the thermal conductivity, the substrate thickness, and the UV glue. Moreover, the use of copper substrate can effectively dissipate the joule heat, which then reduces the temperature gradient. Finally, it is shown that the use of a high thermal conductivity thinner substrate can enhance the thermal conductivity of OLED and the luminance efficiency as well.

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

PubMed Central

Memarian, Nafiseh; Rozati, Seyeed Mohammad; Concina, Isabella

2017-01-01

Nanocrystalline CdS thin films were grown on glass substrates by a thermal evaporation method in a vacuum of about 2 × 10−5 Torr at substrate temperatures ranging between 25 °C and 250 °C. The physical properties of the layers were analyzed by transmittance spectra, XRD, SEM, and four-point probe measurements, and exhibited strong dependence on substrate temperature. The XRD patterns of the films indicated the presence of single-phase hexagonal CdS with (002) orientation. The structural parameters of CdS thin films (namely crystallite size, number of grains per unit area, dislocation density and the strain of the deposited films) were also calculated. The resistivity of the as-deposited films were found to vary in the range 3.11–2.2 × 104 Ω·cm, depending on the substrate temperature. The low resistivity with reasonable transmittance suggest that this is a reliable way to fine-tune the functional properties of CdS films according to the specific application. PMID:28773133

Structural and magnetic properties of Ni nanofilms on Ge(001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bocirnea, Amelia Elena; Costescu, Ruxandra Maria; Pasuk, Iuliana; Lungu, George Adrian; Teodorescu, Cristian Mihail

2017-12-01

Ni films of 20 nm nominal thickness were grown on Ge(001) substrates by molecular beam epitaxy at several different temperatures from room temperature up to 400 °C. X-ray diffraction and X-ray photoelectron spectroscopy reveal the nucleation of Ni-Ge compounds (NiGe, Ni2Ge, Ni5Ge2) as well as a departure from the fcc Ni structure exhibited by the films at and beyond a temperature of 100 °C. The binding energy of the Ni 2p peak increases from the RT value (852.7 eV) by 0.5-1.1 eV for the Ni/Ge(001) samples, while the Ge 2p binding energy changes by 0.6-0.7 eV after Ni growth compared to a clean Ge(001) substrate (there is only a ±0.15 eV shift among the samples grown on substrates at higher temperatures). By increasing substrate temperature, we obtained higher intermixing of Ni and Ge, but rather than both Ni and Ge interdiffusing, we find that Ni diffuses further into the germanium with higher substrate temperature, forming increasingly Ni-rich Ni-Ge compounds diluted into the Ge matrix. Based on Magneto-optic Kerr Effect measurements, Ni/Ge(001) grown on substrates at 100 and 200 °C does not exhibit a hysteresis loop, while the samples on 300 and 400 °C substrates show magnetic behavior, which we attribute to the magnetic character of hexagonal Ni5Ge2 (which is determined here for the first time to be a ferromagnetic phase).

Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, W. F.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research; Liu, Z. G.

2013-03-18

Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated withmore » conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.« less

Deposition of Electrically Conductive Coatings on Castable Polyurethane Elastomers by the Flame Spraying Process

NASA Astrophysics Data System (ADS)

Ashrafizadeh, H.; McDonald, A.; Mertiny, P.

2016-02-01

Deposition of metallic coatings on elastomeric polymers is a challenging task due to the heat sensitivity and soft nature of these materials and the high temperatures in thermal spraying processes. In this study, a flame spraying process was employed to deposit conductive coatings of aluminum-12silicon on polyurethane elastomers. The effect of process parameters, i.e., stand-off distance and air added to the flame spray torch, on temperature distribution and corresponding effects on coating characteristics, including electrical resistivity, were investigated. An analytical model based on a Green's function approach was employed to determine the temperature distribution within the substrate. It was found that the coating porosity and electrical resistance decreased by increasing the pressure of the air injected into the flame spray torch during deposition. The latter also allowed for a reduction of the stand-off distance of the flame spray torch. Dynamic mechanical analysis was performed to investigate the effect of the increase in temperature within the substrate on its dynamic mechanical properties. It was found that the spraying process did not significantly change the storage modulus of the polyurethane substrate material.

Design of a cylindrical LED substrate without radiator

NASA Astrophysics Data System (ADS)

Tang, Fan; Guo, Zhenning

2017-12-01

To reduce the weight and production costs of light-emitting diode (LED) lamps, we applied the principle of the chimney effect to design a cylindrical LED substrate without a radiator. We built a 3D model by using Solidworks software and applied the flow simulation plug-in to conduct model simulation, thereby optimizing the heat source distribution and substrate thickness. The results indicate that the design achieved optimal cooling with a substrate with an upper extension length of 35 mm, a lower extension length of 8 mm, and a thickness of 1 mm. For a substrate of those dimensions, the highest LED chip temperature was 64.78 °C, the weight of the substrate was 35.09 g, and R jb = 7.00 K/W. If the substrate is powered at 8, 10, and 12 W, its temperature meets LED safety requirements. In physical tests, the highest temperature for a physical 8 W cylindrical LED substrate was 66 °C, which differed by only 1.22 °C from the simulation results, verifying the validity of the simulation. The designed cylindrical LED substrate can be used in high-power LED lamps that do not require radiators. This design is not only excellent for heat dissipation, but also for its low weight, low cost, and simplicity of manufacture.

Warming accelerates decomposition of decades-old carbon in forest soils.

PubMed

Hopkins, Francesca M; Torn, Margaret S; Trumbore, Susan E

2012-06-26

Global climate carbon-cycle models predict acceleration of soil organic carbon losses to the atmosphere with warming, but the size of this feedback is poorly known. The temperature sensitivity of soil carbon decomposition is commonly determined by measuring changes in the rate of carbon dioxide (CO(2)) production under controlled laboratory conditions. We added measurements of carbon isotopes in respired CO(2) to constrain the age of carbon substrates contributing to the temperature response of decomposition for surface soils from two temperate forest sites with very different overall rates of carbon cycling. Roughly one-third of the carbon respired at any temperature was fixed from the atmosphere more than 10 y ago, and the mean age of respired carbon reflected a mixture of substrates of varying ages. Consistent with global ecosystem model predictions, the temperature sensitivity of the carbon fixed more than a decade ago was the same as the temperature sensitivity for carbon fixed less than 10 y ago. However, we also observed an overall increase in the mean age of carbon respired at higher temperatures, even correcting for potential substrate limitation effects. The combination of several age constraints from carbon isotopes showed that warming had a similar effect on respiration of decades-old and younger (<10 y) carbon but a greater effect on decomposition of substrates of intermediate (between 7 and 13 y) age. Our results highlight the vulnerability of soil carbon to warming that is years-to-decades old, which makes up a large fraction of total soil carbon in forest soils globally.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Photoactive lead oxide thin films by spray pyrolysis

NASA Astrophysics Data System (ADS)

Bhagat, Dharini; Waldiya, Manmohansingh; Mukhopadhyay, Indrajit

2018-05-01

We report the synthesis of photoactive lead monoxide thin films on fluorine doped tin oxide substrate by cost effective spray pyrolysis technique using aqueous solution of lead acetate trihydrate. Influence of substrate temperature on the structural and optical properties of thin films was studied. Polymorph of lead monoxide, litharge (α-PbO), was obtained when the substrate temperature was kept constant at 360 °C. XRD analysis revealed that the deposits were tetragonal structured with preferred orientation along 002 plane. Band gap value was found to be 1.93ev from diffuse reflectance spectra.

On the transmission of terahertz radiation through silicon-based structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Persano, Anna, E-mail: anna.persano@le.imm.cnr.it; Francioso, Luca; Cola, Adriano

2014-07-28

We report on the transmission of a terahertz (THz) radiation through prototype structures based on a p-type silicon substrate. In particular, the bare substrate and progressively more complicated multilayer structures were investigated, allowing to address the effect on the transmission of different factors, such as the orientation of interdigitated contacts with respect to the polarized beam, the temperature, and the current flowing through a conductive SnO{sub 2} nanorods layer. A suitable experimental set-up was developed for the direct spectral measurement of transmission in the range of 0.75–1.1 THz at room and low temperatures. A simple Drude-Lorentz model was formulated, findingmore » a quantitative agreement with the experimental transmission spectrum of the bare substrate at room temperature. For the multilayer structures, the spectra variations observed with temperature are well accounted by the corresponding change of the mobility of holes in the silicon p-type substrate. The influence of the contact orientation is consistent with that of a polarizing metallic grating. Finally, Joule heating effects are observed in the spectra performed as a function of the current flowing through the SnO{sub 2} nanorods layer. The experimental results shown here, together with their theoretical interpretation, provide insights for the development of devices fabricated on conductive substrates aimed to absorb/modulate radiation in the THz range.« less

Effects of fasting on maximum thermogenesis in temperature-acclimated rats

NASA Astrophysics Data System (ADS)

Wang, L. C. H.

1981-09-01

To further investigate the limiting effect of substrates on maximum thermogenesis in acute cold exposure, the present study examined the prevalence of this effect at different thermogenic capabilities consequent to cold- or warm-acclimation. Male Sprague-Dawley rats (n=11) were acclimated to 6, 16 and 26‡C, in succession, their thermogenic capabilities after each acclimation temperature were measured under helium-oxygen (21% oxygen, balance helium) at -10‡C after overnight fasting or feeding. Regardless of feeding conditions, both maximum and total heat production were significantly greater in 6>16>26‡C-acclimated conditions. In the fed state, the total heat production was significantly greater than that in the fasted state at all acclimating temperatures but the maximum thermogenesis was significant greater only in the 6 and 16‡C-acclimated states. The results indicate that the limiting effect of substrates on maximum and total thermogenesis is independent of the magnitude of thermogenic capability, suggesting a substrate-dependent component in restricting the effective expression of existing aerobic metabolic capability even under severe stress.

Effects of Soil Temperature and Moisture on Soil Respiration on the Tibetan Plateau

PubMed Central

Chang, Xiaofeng; Wang, Shiping; Xu, Burenbayin; Luo, Caiyun; Zhang, Zhenhua; Wang, Qi; Rui, Yichao; Cui, Xiaoying

2016-01-01

Understanding of effects of soil temperature and soil moisture on soil respiration (Rs) under future warming is critical to reduce uncertainty in predictions of feedbacks to atmospheric CO2 concentrations from grassland soil carbon. Intact cores with roots taken from a full factorial, 5-year alpine meadow warming and grazing experiment in the field were incubated at three different temperatures (i.e. 5, 15 and 25°C) with two soil moistures (i.e. 30 and 60% water holding capacity (WHC)) in our study. Another experiment of glucose-induced respiration (GIR) with 4 h of incubation was conducted to determine substrate limitation. Our results showed that high temperature increased Rs and low soil moisture limited the response of Rs to temperature only at high incubation temperature (i.e. 25°C). Temperature sensitivity (Q10) did not significantly decrease over the incubation period, suggesting that substrate depletion did not limit Rs. Meanwhile, the carbon availability index (CAI) was higher at 5°C compared with 15 and 25°C incubation, but GIR increased with increasing temperature. Therefore, our findings suggest that warming-induced decrease in Rs in the field over time may result from a decrease in soil moisture rather than from soil substrate depletion, because warming increased root biomass in the alpine meadow. PMID:27798671

Epitaxial gallium arsenide wafers

NASA Technical Reports Server (NTRS)

Black, J. F.; Robinson, L. B.

1971-01-01

The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.

Research Area 4: Electronics: A Special Event at the International Conference on Molecular Beam Epitaxy

DTIC Science & Technology

2015-09-30

cell temperature is shown in Fig. 4. Here we begin with the premise when both In and Ga are incident on the wafer, the Sb consumption rate should be a...monitor the Sb consumption rate while slowly raising the cell temperature . It is evident from the data that the correct rate of total Sb consumption ...rise the substrate temperature during DE phase of DETA technique owing to the heat reflectance effect , while the power supplied to a substrate heater

Practical ultrasonic transducers for high-temperature applications using bismuth titanate and Ceramabind 830

NASA Astrophysics Data System (ADS)

Xu, Janet L.; Batista, Caio F. G.; Tittmann, Bernhard R.

2018-04-01

Structural health monitoring of large valve bodies in high-temperature environments such as power plants faces several limitations: commercial transducers are not rated for such high temperatures, gel couplants will evaporate, and measurements cannot be made in-situ. To solve this, we have furthered the work of Ledford in applying a practical transducer in liquid form which hardens and air dries directly onto the substrate. The transducer material is a piezoceramic film composed of bismuth titanate and a high-temperature binding agent, Ceramabind 830. The effects of several fabrication conditions were studied to optimize transducer performance and ensure repeatability. These fabrication conditions include humidity, binder ratio, water ratio, substrate roughness, and film thickness. The final product is stable for both reactive and non-reactive substrates, has a quick fabrication time, and has an operating temperature up to the Curie temperature of BIT, 650°C, well beyond the safe operating temperature of PZT (150°C).

Method of forming fluorine-bearing diamond layer on substrates, including tool substrates

DOEpatents

Chang, R. P. H.; Grannen, Kevin J.

2002-01-01

A method of forming a fluorine-bearing diamond layer on non-diamond substrates, especially on tool substrates comprising a metal matrix and hard particles, such as tungsten carbide particles, in the metal matrix. The substrate and a fluorine-bearing plasma or other gas are then contacted under temperature and pressure conditions effective to nucleate fluorine-bearing diamond on the substrate. A tool insert substrate is treated prior to the diamond nucleation and growth operation by etching both the metal matrix and the hard particles using suitable etchants.

[Preparation and Performance of Ultrafast γ-CuI Scintillation Conversion Screen].

PubMed

Xia, Ming; Gu, Mu; Liu, Xiao-lin; Liu, Bo; Huang, Shi-ming; Ni, Chen

2015-04-01

Micro-columnar structured γ-CuI scintillation conversion screen with columnar diameter in the micrometer and thickness about 17 µm were prepared by thermal evaporation method on quartz substrates with different temperatures. X-ray excited luminescence spectra of the screens show two peaks located at 430 nm and near 700 nm, which correspond to the fast and slow emission components, respectively. The fast one dominated. The intensity of 430 nm peak decreased as the substrate temperature rose from 170 °C to 210 °C. At the same time the intensity of 700 nm band increased. The changes may be attributed to the iodine loss from screen caused by the substrate temperature. The phenomenon of iodine loss was observed by the Rutherford backscattering experiment. The crystal structure of the screens presents (111) preferred orientation, which is independent of the substrate temperature. As the temperature rose to 210 °C, two weak additional peaks of (220) and (420) γ-CuI crystal planes in X-ray diffraction patterns appeared due to the increase in kinetic energy of CuI molecules. The scanning electron microscopy images of the screens showed that the columnar structure was improved when the substrate temperature increased from 170 °C to 190 °C, but it would be degenerated when the temperature continued to rise to 210 °C because of the surface and bulk diffusion effects of the depositing molecules. Finally, the spatial resolution of the γ-CuI scintillation screens was measured by knife-edge method, and they are 4.5, 7.2 and 5.6lp · mm(-1) for the screens prepared at the substrates temperatures of 170, 190 and 210 °C, respectively. The result shows that micro-column structure could improve the spatial resolution of γ-CuI scintillation screen.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

PubMed

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Substrate Temperature effect on the transition characteristics of Vanadium (IV) oxide

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Wei, Wei; Jin, Chunming; Narayan, Jay

2008-10-01

One of the semiconductor to metal transition material (SMT) is Vanadium Oxide (VO2) which has a very sharp transition temperature close to 340 K as the crystal structure changes from monoclinic phase (semiconductor) into tetragonal phase (metal phase). We have grown high-quality epitaxial vanadium oxide (VO2) films on sapphire (0001) substrates by pulsed laser deposition for oxygen pressure 10-2torr and obtained interesting results without further annealing treatments. The epitaxial growth via domain matching epitaxy, where integral multiples of planes matched across the film-substrate interface. We were able to control the transition characteristics such as the sharpness (T), amplitude (A) of SMT transition and the width of thermal hysteresis (H) by altering the substrate temperature from 300 ^oC, 400 ^oC, 500 ^oC, and 600 ^oC. We use the XRD to identify the microstructure of film and measure the optical properties of film. Finally the transition characteristics is observed by the resistance with the increase of temperature by Van Der Pauw method from 25 to 100 ^oC to measure the electrical resistivity hystersis loop during the transition temperature.

Process for depositing hard coating in a nozzle orifice

DOEpatents

Flynn, P.L.; Giammarise, A.W.

1991-10-29

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figures.

Apparatus for depositing hard coating in a nozzle orifice

DOEpatents

Flynn, P.L.; Giammarise, A.W.

1995-02-21

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice`s interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figs.

Apparatus for depositing hard coating in a nozzle orifice

DOEpatents

Flynn, Paul L.; Giammarise, Anthony W.

1995-01-01

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

Apparatus and process for depositing hard coating in a nozzle orifice

DOEpatents

Flynn, Paul L.; Giammarise, Anthony W.

1994-01-01

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

Process for depositing hard coating in a nozzle orifice

DOEpatents

Flynn, Paul L.; Giammarise, Anthony W.

1991-01-01

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance toerosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

NASA Astrophysics Data System (ADS)

Schleicher, B.; Niemann, R.; Diestel, A.; Hühne, R.; Schultz, L.; Fähler, S.

2015-08-01

Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

DOEpatents

Wood, Richard F.; Young, Rosa T.

1984-01-01

The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

The hydrolysis and biogas production of complex cellulosic substrates using three anaerobic biomass sources.

PubMed

Keating, C; Cysneiros, D; Mahony, T; O'Flaherty, V

2013-01-01

In this study, the ability of various sludges to digest a diverse range of cellulose and cellulose-derived substrates was assessed at different temperatures to elucidate the factors affecting hydrolysis. For this purpose, the biogas production was monitored and the specific biogas activity (SBA) of the sludges was employed to compare the performance of three anaerobic sludges on the degradation of a variety of complex cellulose sources, across a range of temperatures. The sludge with the highest performance on complex substrates was derived from a full-scale bioreactor treating sewage at 37 °C. Hydrolysis was the rate-limiting step during the degradation of complex substrates. No activity was recorded for the synthetic cellulose compound carboxymethylcellulose (CMC) using any of the sludges tested. Increased temperature led to an increase in hydrolysis rates and thus SBA values. The non-granular nature of the mesophilic sludge played a positive role in the hydrolysis of solid substrates, while the granular sludges proved more effective on the degradation of soluble compounds.

Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

PubMed

Chen, Tao-Hsing; Chen, Ting-You

2015-11-03

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

Effects of experimental conditions on the morphologies, structures and growth modes of pulsed laser-deposited CdS nanoneedles

PubMed Central

2014-01-01

CdS nanoneedles with different morphologies, structures, and growth modes have been grown on Ni-coated Si(100) surface under different experimental conditions by pulsed laser deposition method. The effects of catalyst layer, substrate temperature, and laser pulse energy on the growth of the CdS nanoneedles were studied in detail. It was confirmed that the formation of the molten catalyst spheres is the key to the nucleation of the CdS nanoneedles by observing the morphologies of the Ni catalyst thin films annealed at different substrate temperatures. Both the substrate temperature and laser pulse energy strongly affected the growth modes of the CdS nanoneedles. The secondary growth of the smaller nanoneedles on the top of the main nanoneedles was found at appropriate conditions. A group of more completed pictures of the growth modes of the CdS nanoneedles were presented. PMID:24559455

Wire-Arc-Sprayed Aluminum Protects Steel Against Corrosion

NASA Technical Reports Server (NTRS)

Zimmerman, Frank R.; Poorman, Richard; Sanders, Heather L.; Mckechnie, Timothy N.; Bonds, James W., Jr.; Daniel, Ronald L., Jr.

1995-01-01

Aluminum coatings wire-arc sprayed onto steel substrates found effective in protecting substrates against corrosion. Coatings also satisfy stringent requirements for adhesion and flexibility, both at room temperature and at temperatures as low as liquid hydrogen. Developed as alternatives to corrosion-inhibiting primers and paints required by law to be phased out because they contain and emit such toxic substances as chromium and volatile organic compounds.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S _o for the thin films were determined and presented in this work.

Expanding Upon the MEMS Framework: How Temperature Impacts Organo-Mineral Interactions

NASA Astrophysics Data System (ADS)

Smith, K.; Waring, B. G.

2017-12-01

Microbial substrate use efficiency (SUE; the fraction of substrate carbon (C) incorporated into biomass vs. respired) affects the development of soil organic matter (SOM). An emerging theoretical model (the Microbial Efficiency-Matrix Stabilization (MEMS) framework) posits that microbial SUE acts as a filter for plant litter inputs, whereby a larger proportion of microbial products are synthesized from labile (and not recalcitrant) plant substrates. Thus, SOM stability depends on both the efficiency of microbial anabolism as well as the degree to which microbial products stabilize within the mineral soil matrix. In this study, we performed a laboratory microcosm experiment using diverse soils collected in Utah to test how substrate complexity, soil mineralogy, and temperature interact to control SOM formation. Prior to microcosm setup, we first removed organic C from our field soils by washing with concentrated hypochlorite solution. Microcosms were then assembled by mixing C-free soil with one of three substrates (glucose, cellulose, and lignin), and placed in incubators set to different temperatures (18°, 28°, and 38°C). Respiration rates were then estimated by periodically sampling headspace CO2 concentrations in each microcosm. Prior to C removal, we found that field soils exhibited distinct properties ranging from clay-rich vertisols (55:27:18, sand:silt:clay; 1.1% C), to loamy-sand entisols (85:11:4; 0.3% C), and organic-rich mollisols (79:17:4; 1.7% C). In the incubation experiment, consistent with enzyme kinetics theory, respiration rates increased as a function of incubation temperature (p < 0.0001), and that the temperature response of respiration was dependent on substrate (p < 0.0001), with the lignin treatment exhibiting the greatest temperature sensitivity. While respiration was significantly lower in the mollisol treatment (p < 0.0001), other soil effects (including interactions with temperature and substrate) were less clear. Together these results build upon the MEMS framework by highlighting the importance of organo-mineral interactions and temperature as controls on soil C cycling.

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, D. H.; Das Arulsamy, A.; Rider, A. E.

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si{sup 3+} and Si{sup 1+} ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nmmore » size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si{sup 1+} ions in a low substrate temperature range (227-327 deg. C). As low substrate temperatures ({<=}500 deg. C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.« less

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

NASA Astrophysics Data System (ADS)

Seo, D. H.; Rider, A. E.; Das Arulsamy, A.; Levchenko, I.; Ostrikov, K.

2010-01-01

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si3+ and Si1+ ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nm size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si1+ ions in a low substrate temperature range (227-327 °C). As low substrate temperatures (≤500 °C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.

Substrate-dependent temperature sensitivity of soil organic matter decomposition

NASA Astrophysics Data System (ADS)

Myachina, Olga; Blagodatskaya, Evgenia

2015-04-01

Activity of extracellular enzymes responsible for decomposition of organics is substrate dependent. Quantity of the substrate is the main limiting factor for enzymatic or microbial heterotrophic activity in soils. Different mechanisms of enzymes response to temperature suggested for low and high substrate availability were never proved for real soil conditions. We compared the temperature responses of enzymes-catalyzed reactions in soils. Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation.

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

NASA Technical Reports Server (NTRS)

Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

2005-01-01

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

Field-temperature phase diagrams of freestanding and substrate-constrained epitaxial Ni-Mn-Ga-Co films for magnetocaloric applications

NASA Astrophysics Data System (ADS)

Diestel, A.; Niemann, R.; Schleicher, B.; Schwabe, S.; Schultz, L.; Fähler, S.

2015-07-01

Ferroic cooling processes that rely on field-induced first-order transformations of solid materials are a promising step towards a more energy-efficient refrigeration technology. In particular, thin films are discussed for their fast heat transfer and possible applications in microsystems. Substrate-constrained films are not useful since their substrates act as a heat sink. In this article, we examine a substrate-constrained and a freestanding epitaxial film of magnetocaloric Ni-Mn-Ga-Co. We compare phase diagrams and entropy changes obtained by magnetic field and temperature scans, which differ. We observe an asymmetry of the hysteresis between heating and cooling branch, which vanishes at high magnetic fields. These effects are discussed with respect to the vector character of a magnetic field, which acts differently on the nucleation and growth processes compared to the scalar character of the temperature.

Defect studies of thin ZnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Vlček, M.; Čížek, J.; Procházka, I.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Mosnier, J.-P.

2014-04-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Amine oxidase from lentil seedlings: energetic domains and effect of temperature on activity.

PubMed

Moosavi-Nejad, S Z; Rezaei-Tavirani, M; Padiglia, A; Floris, G; Moosavi-Movahedi, A A

2001-07-01

Copper/TPQ amine oxidases from mammalian and plant sources have shown many differences in substrate specificity and molecular properties. In this work the activity of lentil seedling amine oxidase was followed at various temperatures in 100 mM potassium phosphate buffer, pH 7, using benzylamine as substrate. The discontinuous Arrhenius plot of lentil amine oxidase showed two distinct phases with a jump between them. Thermal denaturation of the enzyme, using differential scanning calorimetry under the same experimental conditions, showed a transition at the same temperature ranges in the absence of substrate, indicating the occurrence of conformational changes, with an enthalpy change of about 175.9 kJ/mole. The temperature-induced changes of the activity of lentil amine oxidase are compared with those of bovine serum amine oxidase (taken from the literature).

Effect of growth parameters on crystallinity and properties of ZnO films grown by plasma assisted MOCVD

NASA Astrophysics Data System (ADS)

Losurdo, M.; Giangregorio, M. M.; Sacchetti, A.; Capezzuto, P.; Bruno, G.; Malandrino, G.; Fragalà, I. L.

2007-07-01

Thin films of ZnO have been grown by plasma assisted metal-organic chemical vapour deposition (PA-MOCVD) using a 13.56 MHz O 2 plasma and the Zn(TTA)•tmed (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,N',N'-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20 W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Warming accelerates decomposition of decades-old carbon in forest soils

DOE PAGES

Hopkins, F. M.; Torn, M. S.; Trumbore, S. E.

2012-06-11

Global climate carbon-cycle models predict acceleration of soil organic carbon losses to the atmosphere with warming, but the size of this feedback is poorly known. The temperature sensitivity of soil carbon decomposition is commonly determined by measuring changes in the rate of carbon dioxide (CO 2) production under controlled laboratory conditions. We added measurements of carbon isotopes in respired CO 2 to constrain the age of carbon substrates contributing to the temperature response of decomposition for surface soils from two temperate forest sites with very different overall rates of carbon cycling. Roughly one-third of the carbon respired at any temperaturemore » was fixed from the atmosphere more than 10 y ago, and the mean age of respired carbon reflected a mixture of substrates of varying ages. Consistent with global ecosystem model predictions, the temperature sensitivity of the carbon fixed more than a decade ago was the same as the temperature sensitivity for carbon fixed less than 10 y ago. However, we also observed an overall increase in the mean age of carbon respired at higher temperatures, even correcting for potential substrate limitation effects. The combination of several age constraints from carbon isotopes showed that warming had a similar effect on respiration of decades-old and younger (<10 y) carbon but a greater effect on decomposition of substrates of intermediate (between 7 and 13 y) age. Our results highlight the vulnerability of soil carbon to warming that is years-to-decades old, which makes up a large fraction of total soil carbon in forest soils globally.« less

Adhesion of in situ precipitated calcium carbonate in the presence and absence of magnetic field in quiescent conditions on different solid surfaces.

PubMed

Chibowski, Emil; Hołysz, Lucyna; Szcześ, Aleksandra

2003-11-01

Deposition of in situ precipitated calcium carbonate from Na(2)CO(3) and CaCl2 solutions on different substrates, i.e. stainless steel, copper, aluminium, and glass, was investigated at different temperatures, 20 degrees C, 40 degrees C, 60 degrees C and 80 degrees C, both in the absence and presence of S-S 0.1T magnetic field (MF). It was found that in quiescent conditions during 2h the amounts deposited firmly on the surfaces decreased with increasing temperature. If MF was present the deposition was reduced at all temperatures, and depended on the nature of the substrate. The largest MF effect was found on glass at 60 degrees C, which amounted 50% reduction of the deposit. However, at 80 degrees C no deposition was found in the presence of MF on aluminium surface. At this temperature the reproducibility of the experiments was poor, and an additional effect due to the metal surface corrosion (especially that of aluminium and copper) may be thought in alkaline environment of the experiments (pH ca. 10). Based on optical microscope photographs, it was concluded that the amounts of crystallographic forms of CaCO3 depended on the nature of substrate on which the precipitation and then the adhesion took place. To some extent the ratios of CaCO3 forms precipitated were different in the bulk phase than on the substrate surfaces at the same temperature, and this conclusion was based on the X-ray diffractograms. Some possible mechanisms causing MF effects are discussed.

Effects of high-energy proton irradiation on the superconducting properties of Fe(Se,Te) thin films

NASA Astrophysics Data System (ADS)

Sylva, G.; Bellingeri, E.; Ferdeghini, C.; Martinelli, A.; Pallecchi, I.; Pellegrino, L.; Putti, M.; Ghigo, G.; Gozzelino, L.; Torsello, D.; Grimaldi, G.; Leo, A.; Nigro, A.; Braccini, V.

2018-05-01

In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out an experimental investigation with different irradiation fluences up to 7.30 · 1016 cm‑2 and different proton implantation depths, in order to clarify whether and to what extent the critical current is enhanced or suppressed, what are the effects of irradiation on the critical temperature, resistivity, and critical magnetic fields, and finally what is the role played by the substrate in this context. We find that the effect of irradiation on superconducting properties is generally small compared to the case of other iron-based superconductors. The irradiation effect is more evident on the critical current density Jc, while it is minor on the transition temperature Tc, normal state resistivity ρ, and on the upper critical field Hc2 up to the highest fluences explored in this work. In more detail, our analysis shows that when protons implant in the substrate far from the superconducting film, the critical current can be enhanced up to 50% of the pristine value at 7 T and 12 K; meanwhile, there is no appreciable effect on critical temperature and critical fields together with a slight decrease in resistivity. On the contrary, when the implantation layer is closer to the film–substrate interface, both critical current and temperature show a decrease accompanied by an enhancement of the resistivity and lattice strain. This result evidences that possible modifications induced by irradiation in the substrate may affect the superconducting properties of the film via lattice strain. The robustness of the Fe(Se,Te) system to irradiation-induced damage makes it a promising compound for the fabrication of magnets in high-energy accelerators.

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

NASA Astrophysics Data System (ADS)

Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

2018-05-01

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Oveshnikov, L. N.; Lunin, R. A.

The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect aremore » studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.« less

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1- x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-06-01

In a temperature range of 9-200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1-xTe (x = 0.22-0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

Apparatus and process for depositing hard coating in a nozzle orifice

DOEpatents

Flynn, P.L.; Giammarise, A.W.

1994-12-20

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figures.

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Effect of Temperature on Nucleation of Nanocrystalline Indium Tin Oxide Synthesized by Electron-Beam Evaporation

NASA Astrophysics Data System (ADS)

Shen, Yan; Zhao, Yujun; Shen, Jianxing; Xu, Xiangang

2017-07-01

Indium tin oxide (ITO) has been widely applied as a transparent conductive layer and optical window in light-emitting diodes, solar cells, and touch screens. In this paper, crystalline nano-sized ITO dendrites are obtained using an electron-beam evaporation technique. The surface morphology of the obtained ITO was studied for substrate temperatures of 25°C, 130°C, 180°C, and 300°C. Nano-sized crystalline dendrites were synthesized only at a substrate temperature of 300°C. The dendrites had a cubic structure, confirmed by the results of x-ray diffraction and transmission electron microscopy. The growth mechanism of the nano-crystalline dendrites could be explained by a vapor-liquid-solid (VLS) growth model. The catalysts of the VLS process were indium and tin droplets, confirmed by varying the substrate temperature, which further influenced the nucleation of the ITO dendrites.

Growth of tungsten oxide nanostructures by chemical solution deposition

NASA Astrophysics Data System (ADS)

Jin, L. H.; Bai, Y.; Li, C. S.; Wang, Y.; Feng, J. Q.; Lei, L.; Zhao, G. Y.; Zhang, P. X.

2018-05-01

Tungsten oxide nanostructures were fabricated on LaAlO3 (00l) substrates by a simple chemical solution deposition. The decomposition behavior and phase formation of ammonium tungstate precursor were characterized by thermal analysis and X-ray diffraction. Moreover, the morphology and chemical state of nanostructures were analyzed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectra. The effects of crystallization temperature on the formation of nanodots and nanowires were investigated. The results indicated that the change of nanostructures had close relationship with the crystallization temperature during the chemical solution deposition process. Under higher crystallization temperature, the square-like dots transformed into the dome-like nanodots and nanowires. Moreover high density well-ordered nanodots could be obtained on the substrate with the further increase of crystallization temperature. It also suggested that this simple chemical solution process could be used to adjust the nanostructures of tungsten oxide compounds on substrate.

Transparent and conducting ZnO films grown by spray pyrolysis

NASA Astrophysics Data System (ADS)

Hadjeris, Lazhar; Herissi, Labidi; Badreddine Assouar, M.; Easwarakhanthan, Thomas; Bougdira, Jamal; Attaf, Nadhir; Salah Aida, M.

2009-03-01

ZnO films were prepared using the simple, flexible and cost-effective spray pyrolysis technique at different substrate temperatures and precursor molarity values. The films' structural, optical and electrical properties were investigated by x-ray diffraction, UV-VIS transmittance spectroscopy, profilometry and voltage-current-temperature (VIT) measurements. The films prepared at substrate temperatures above 400 °C appear better crystallized with (0 0 2) preferred orientation and exhibit higher visible transmittance (65-80%), higher electrical n-type semiconductor conductivity (10-50 (Ω cm)-1), lower activation energy (<0.35 eV) and smaller Urbach energy (80 meV). These results indicate that such sprayed ZnO films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition of the precursor droplets. ZnO films having desired optical and electrical properties for cheaper large-area solar cells may thus be tailored through the substrate temperature and the precursor molarity.

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Marangoni Flow Induced Evaporation Enhancement on Binary Sessile Drops.

PubMed

Chen, Pin; Harmand, Souad; Ouenzerfi, Safouene; Schiffler, Jesse

2017-06-15

The evaporation processes of pure water, pure 1-butanol, and 5% 1-butanol aqueous solution drops on heated hydrophobic substrates are investigated to determine the effect of temperature on the drop evaporation behavior. The evolution of the parameters (contact angle, diameter, and volume) during evaporation measured using a drop shape analyzer and the infrared thermal mapping of the drop surface recorded by an infrared camera were used in investigating the evaporation process. The pure 1-butanol drop does not show any thermal instability at different substrate temperatures, while the convection cells created by the thermal Marangoni effect appear on the surface of the pure water drop from 50 °C. Because 1-butanol and water have different surface tensions, the infrared video of the 5% 1-butanol aqueous solution drop shows that the convection cells are generated by the solutal Marangoni effect at any substrate temperature. Furthermore, when the substrate temperature exceeds 50 °C, coexistence of the thermal and solutal Marangoni flows is observed. By analyzing the relation between the ratio of the evaporation rate of pure water and 1-butanol aqueous solution drops and the Marangoni number, a series of empirical equations for predicting the evaporation rates of pure water and 1-butanol aqueous solution drops at the initial time as well as the equations for the evaporation rate of 1-butanol aqueous solution drop before the depletion of alcohol are derived. The results of these equations correspond fairly well to the experimental data.

Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schleicher, B., E-mail: b.schleicher@ifw-dresden.de; Niemann, R.; Schultz, L.

2015-08-07

Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth andmore » martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.« less

Temperature and substrate chemistry as major drivers of interregional variability of leaf microbial decomposition and cellulolytic activity in headwater streams.

PubMed

Fenoy, Encarnación; Casas, J Jesús; Díaz-López, Manuel; Rubio, Juan; Guil-Guerrero, J Luís; Moyano-López, Francisco J

2016-11-01

Abiotic factors, substrate chemistry and decomposers community composition are primary drivers of leaf litter decomposition. In soil, much of the variation in litter decomposition is explained by climate and substrate chemistry, but with a significant contribution of the specialisation of decomposer communities to degrade specific substrates (home-field advantage, HFA). In streams, however, HFA effects on litter decomposition have not been explicitly tested. We evaluated responses of microbial decomposition and β-glucosidase activity to abiotic factors, substrate and decomposer assemblages, using a reciprocal litter transplant experiment: 'ecosystem type' (mountain vs lowland streams) × 'litter chemistry' (alder vs reed). Temperature, pH and ionic concentration were higher in lowland streams. Decomposition for both species was faster in lowland streams. Decomposition of reed was more accelerated in lowland compared with mountain streams than that of alder, suggesting higher temperature sensitivity of decomposition in reed. Q10 (5°C-15°C) values of β-glucosidase activity were over 2. The alkaline pH and high ionic concentration of lowland streams depleted enzyme activity. We found similar relationships of decomposition or enzyme activity with abiotic factors for both species, suggesting limited support to the HFA hypothesis. Overall, our results suggest a prime role of temperature interacting with substrate chemistry on litter decomposition. © FEMS 2016. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

NASA Astrophysics Data System (ADS)

Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

2016-09-01

Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

Effect of Bed Temperature on the Laser Energy Required to Sinter Copper Nanoparticles

NASA Astrophysics Data System (ADS)

Roy, N. K.; Dibua, O. G.; Cullinan, M. A.

2018-03-01

Copper nanoparticles (NPs), due to their high electrical conductivity, low cost, and easy availability, provide an excellent alternative to other metal NPs such as gold, silver, and aluminum in applications ranging from direct printing of conductive patterns on metal and flexible substrates for printed electronics applications to making three-dimensional freeform structures for interconnect fabrication for chip-packaging applications. Lack of research on identification of optimum sintering parameters such as fluence/irradiance requirements for sintering of Cu NPs serves as the primary motivation for this study. This article focuses on the identification of a good sintering irradiance window for Cu NPs on an aluminum substrate using a continuous wave (CW) laser. The study also includes the comparison of CW laser sintering irradiance windows obtained with substrates at different initial temperatures. The irradiance requirements for sintering of Cu NPs with the substrate at 150-200°C were found to be 5-17 times smaller than the irradiance requirements for sintering with the substrate at room temperature. These findings were also compared against the results obtained with a nanosecond (ns) laser and a femtosecond (fs) laser.

The effect of heat treatment on superhydrophilicity of TiO2 nano thin films

NASA Astrophysics Data System (ADS)

Ashkarran, A. A.; Mohammadizadeh, M. R.

2007-11-01

TiO2 thin films were synthesized by the sol-gel method and spin coating process. The calcination temperature was changed from 100 to 550°C. XRD patterns show increasing the content of polycrystalline anatase phase with increasing the calcination temperature. The AFM results indicate granular morphology of the films, which particle size changes from 22 to 166nm by increasing the calcination temperature. The RBS, EDX and Raman spectroscopy of the films show the ratio of Ti:O ~0.5, and diffusion of sodium ions from substrate into the layer, by increasing the calcination temperature. The UV-vis spectroscopy of the films indicates a red shift by increasing the calcination temperature. The contact angle meter experiment shows that superhydrophilicity of the films depends on the formation of anatase crystal structure and diffused sodium content from substrate to the layer. The best hydrophilicity property was observed at 450°C calcination temperature, where the film is converted to a superhydrophilic surface after 10min under 2mW/cm2 UV irradiation. Water droplet on TiO2 thin film on Si(111), Si(100), and quartz substrates is spread to smaller angles rather than glass and polycrystalline Si substrates under UV irradiation.

Alkylamine capped metal nanoparticle "inks" for printable SERS substrates, electronics and broadband photodetectors.

PubMed

Polavarapu, Lakshminarayana; Manga, Kiran Kumar; Yu, Kuai; Ang, Priscilla Kailian; Cao, Hanh Duyen; Balapanuru, Janardhan; Loh, Kian Ping; Xu, Qing-Hua

2011-05-01

We report a facile and general method for the preparation of alkylamine capped metal (Au and Ag) nanoparticle "ink" with high solubility. Using these metal nanoparticle "inks", we have demonstrated their applications for large scale fabrication of highly efficient surface enhanced Raman scattering (SERS) substrates by a facile solution processing method. These SERS substrates can detect analytes down to a few nM. The flexible plastic SERS substrates have also been demonstrated. The annealing temperature dependent conductivity of the nanoparticle films indicated a transition temperature above which high conductivity was achieved. The transition temperature could be tailored to the plastic compatible temperatures by using proper alkylamine as the capping agent. The ultrafast electron relaxation studies of the nanoparticle films demonstrated that faster electron relaxation was observed at higher annealing temperatures due to stronger electronic coupling between the nanoparticles. The applications of these highly concentrated alkylamine capped metal nanoparticle inks for the printable electronics were demonstrated by printing the oleylamine capped gold nanoparticles ink as source and drain for the graphene field effect transistor. Furthermore, the broadband photoresponse properties of the Au and Ag nanoparticle films have been demonstrated by using visible and near-infrared lasers. These investigations demonstrate that these nanoparticle "inks" are promising for applications in printable SERS substrates, electronics, and broadband photoresponse devices. © The Royal Society of Chemistry 2011

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

NASA Astrophysics Data System (ADS)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-02-01

Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

Glancing angle deposition of sculptured thin metal films at room temperature

NASA Astrophysics Data System (ADS)

Liedtke, S.; Grüner, Ch; Lotnyk, A.; Rauschenbach, B.

2017-09-01

Metallic thin films consisting of separated nanostructures are fabricated by evaporative glancing angle deposition at room temperature. The columnar microstructure of the Ti and Cr columns is investigated by high resolution transmission electron microscopy and selective area electron diffraction. The morphology of the sculptured metallic films is studied by scanning electron microscopy. It is found that tilted Ti and Cr columns grow with a single crystalline morphology, while upright Cr columns are polycrystalline. Further, the influence of continuous substrate rotation on the shaping of Al, Ti, Cr and Mo nanostructures is studied with view to surface diffusion and the shadowing effect. It is observed that sculptured metallic thin films deposited without substrate rotation grow faster compared to those grown with continuous substrate rotation. A theoretical model is provided to describe this effect.

Hetero-Orientation Epitaxial Growth of TiO2 Splats on Polycrystalline TiO2 Substrate

NASA Astrophysics Data System (ADS)

Chen, Lin; Yang, Guan-Jun

2018-05-01

In the present study, the effect of titania (TiO2) substrate grain size and orientation on the epitaxial growth of TiO2 splat was investigated. Interestingly, the splat presented comparable grain size with that of substrate, indicating the hereditary feature of grain size. In addition, hetero- and homo-orientation epitaxial growth was observed at deposition temperatures below 400 °C and above 500 °C, respectively. The preferential growth of high-energy (001) face was also observed at low deposition temperatures (≤ 400 °C), which was found to result from dynamic nonequilibrium effect during the thermal spray deposition. Moreover, thermal spray deposition paves the way for a new approach to prepare high-energy (001) facets of TiO2 crystals.

Low Temperature Metal Coating Method Final Report CRADA No. TSB-1155-95

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Sang-Wook; Gabel, Howard

A new metal coating method, cidled KEM (kinetic energy metal.lization), demonstrated in the laboratory by lnovati, utilized fast-moving solid particIes entrained in a gas that are caused to fiow through a nozzIe to effect particle deposition on metal surfaces at room temperature conditions. This method (US Patent 5,795,626) was an attractive and viabIe alternative to the currentIy available high-temperature coating methods avaiIabIe. Since it differs significantly from existing metal coating technologies, a brief description of the method is incIuded here. The proposed method, KEM, achieves cohesive and adhesive metallurgical bonding through the high-speed coUision of powder with a substrate andmore » the subsequent discharge of electrical charge at the substrate. Such coating is effected by entraining metal powder in a gas and accelerating this mixture through a supersonic nozzle. The gas/powder is directed towards the substrate to be coated. Collisions occur, initiaIly between the powder and the substrate, and, as the first Iayer of the coating forms, between the powder and the coating. During these collisions the powder is rapidly deformed, causing the exposure of fresh (oxide free) active metal surface. When these’active surfaces contact one another, they agglomerate and form true metaIIurgicaI bonds. The resultant coating has Iow porosity and high adhesive and cohesive strength. The formation of metaIIurgicaI bonds is potentiated by the discharge of electrical energy. This electrical energy is the result of triboeIectric charging of the particIes during acceleration and transit to the nozzIe. An advantage of the method is that it does not raise the temperature of the powder being appLiedor that of the substrate. Consequently, materials sensitive to high temperature may be applied without changing Me properties of the materkd or substrate.« less

Flexible thin-film transistors on plastic substrate at room temperature.

PubMed

Han, Dedong; Wang, Wei; Cai, Jian; Wang, Liangliang; Ren, Yicheng; Wang, Yi; Zhang, Shengdong

2013-07-01

We have fabricated flexible thin-film transistors (TFTs) on plastic substrates using Aluminum-doped ZnO (AZO) as an active channel layer at room temperature. The AZO-TFTs showed n-channel device characteristics and operated in enhancement mode. The device shows a threshold voltage of 1.3 V, an on/off ratio of 2.7 x 10(7), a field effect mobility of 21.3 cm2/V x s, a subthreshold swing of 0.23 V/decade, and the off current of less than 10(-12) A at room temperature. Recently, the flexible displays have become a very hot topic. Flexible thin film transistors are key devices for realizing flexible displays. We have investigated AZO-TFT on flexible plastic substrate, and high performance flexible TFTs have been obtained.

Analytical investigations on the thermal properties of microscale inorganic light-emitting diodes on an orthotropic substrate

NASA Astrophysics Data System (ADS)

Li, Y.; Chen, J.; Xing, Y.; Song, J.

2017-03-01

The microscale inorganic light-emitting diodes (μ-ILEDs) create novel opportunities in biointegrated applications such as wound healing acceleration and optogenetics. Analytical expressions, validated by finite element analysis, are obtained for the temperature increase of a rectangular μ-ILED device on an orthotropic substrate, which could offer an appealing advantage in controlling the heat flow direction to achieve the goal in thermal management. The influences of various parameters (e.g., thermal conductivities of orthotropic substrate, loading parameters) on the temperature increase of the μ-ILED are investigated based on the obtained closed-form solutions. These results provide a novel route to control the temperature distribution in the μ-ILED system and provide easily interpretable guidelines to minimize the adverse thermal effects.

Effect of heat treatment on phase composition and crystal structure of thin WSi2 films on silicon substrates

NASA Astrophysics Data System (ADS)

Biryukov, Y. P.; Dostanko, A. P.; Maltsev, A. A.; Shakhlevich, G. M.

1984-10-01

An experimental study of WSi2 films on silicon substrates with either 111 or 100 orientation was made, for the purpose of determining the effect of annealing by heat treatment on their phase composition and crystal structure. Films of 0.2 micron thickness were deposited at a rate of 0.5 nm/s on a silicon surface which was predecontaminated of SiO2 layers and adsorbate atoms by ion sputtering in one vacuum cycle. Deposition was by condensation, with the substrate held at various temperatures from 390 to 500 C, and then annealed in an argon atmosphere at various temperatures from 700 to 1000 C for 30 min. Subsequent phase analysis at room temperature was performed with a DRON-2 X-ray diffractometer, using a CuK (sub alpha)-radiation source and covering the 20 = 10 to 130 deg range of angles by the Debye-Sherer method, while the surface morphology was examined under an electron microscope.

Microfluid oscillator based on thermocapillarity

NASA Astrophysics Data System (ADS)

Huang, Teng-chao; Shen, Yi-bing; Liu, Xu; Bai, Jian; Hou, Xiyun; Ye, Hui; Lou, Di

2004-12-01

A novel micro fluid oscillator with a boron diffused resistor is proposed in this paper. The actuation principle is based on the combination of Marangoni effect. The contemporary microfabrication technique enables us to fabricate microheater tiny enough to control temperature so quickly and precisely in micro length scale. The devices exhibiting the Marangoni effect in square channels were designed and fabricated from one silicon substrate and two quartz substrates. And the three substrates were aligned, bonded and packaged for testing. In this actuator there is a pair of micro-heaters to produce a thermal gradient along the slit. The driving wattage is about 0.1W and the resistors can make a temperature difference about 100 degrees during 0.1s with a pulsewidth of 20us for 0.1A current pulses. Then the movement is driven towards the lower temperature direction by the interfacial tension of the air-liquid interface. This micro fluid actuator can play important role in many liquid micro-systems such as in micromotor and micro valve.

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

NASA Technical Reports Server (NTRS)

Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

1989-01-01

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Development and Comparison of the Substrate Scope of Pd-Catalysts for the Aerobic Oxidation of Alcohols

PubMed Central

Schultz, Mitchell J.; Hamilton, Steven S.; Jensen, David R.; Sigman, Matthew S.

2009-01-01

Three catalysts for aerobic oxidation of alcohols are discussed and the effectiveness of each is evaluated for allylic, benzylic, aliphatic, and functionalized alcohols. Additionally, chiral nonracemic substrates as well as chemoselective and diastereoselective oxidations are investigated. In this study, the most convenient system for the Pd-catalyzed aerobic oxidation of alcohols is Pd(OAc)2 in combination with triethylamine. This system functions effectively for the majority of alcohols tested and uses mild conditions (3 to 5 mol % of catalyst, room temperature). Pd(IiPr)(OAc)2(H2O) (1) also successfully oxidizes the majority of alcohols evaluated. This system has the advantage of significantly lowering catalyst loadings but requires higher temperatures (0.1 to 1 mol % of catalyst, 60 °C). A new catalyst is also disclosed, Pd(IiPr)(OPiv)2 (2). This catalyst operates under very mild conditions (1 mol %, room temperature, and air as the O2 source) but with a more limited substrate scope. PMID:15844968

Statistical optimization of recycled-paper enzymatic hydrolysis for simultaneous saccharification and fermentation via central composite design.

PubMed

Liu, Qing; Cheng, Ke-ke; Zhang, Jian-an; Li, Jin-ping; Wang, Ge-hua

2010-01-01

A central composite design of the response surface methodology (RSM) was employed to study the effects of temperature, enzyme concentration, and stirring rate on recycled-paper enzymatic hydrolysis. Among the three variables, temperature and enzyme concentration significantly affected the conversion efficiency of substrate, whereas stirring rate was not effective. A quadratic polynomial equation was obtained for enzymatic hydrolysis by multiple regression analysis using RSM. The results of validation experiments were coincident with the predicted model. The optimum conditions for enzymatic hydrolysis were temperature, enzyme concentration, and stirring rate of 43.1 degrees C, 20 FPU g(-1) substrate, and 145 rpm, respectively. In the subsequent simultaneous saccharification and fermentation (SSF) experiment under the optimum conditions, the highest 28.7 g ethanol l(-1) was reached in the fed-batch SSF when 5% (w/v) substrate concentration was used initially, and another 5% added after 12 h fermentation. This ethanol output corresponded to 77.7% of the theoretical yield based on the glucose content in the raw material.

Insights on the High-Temperature Operational Limits of ZrO2-Y2O3 TBCs Manufactured via Air Plasma Spray

NASA Astrophysics Data System (ADS)

Lima, Rogerio S.; Marple, Basil R.

2017-03-01

The effective high-temperature operation limit of a ZrO2-7-8 wt.%Y2O3 (YSZ) thermal barrier coating (TBC) manufactured via air plasma spray (APS) is considered to be 1300 °C. This is related to the metastable tetragonal t'-phase formed during the rapid quenching of the YSZ particles during spraying. The t'-phase transforms into the equilibrium tetragonal and cubic phases at temperatures ≥ 1300 °C, which can lead to the formation of the monoclinic phase of YSZ upon cooling to room temperature. This formation of the monoclinic phase is accompanied by a volume expansion that leads to TBC failure due to extensive micro-cracking. To further investigate this limitation, an APS YSZ TBC was sprayed on a CMSX-4 substrate. By using a thermal (laser) gradient cyclic testing, a temperature gradient was generated across the TBC/substrate system. The YSZ T- front and substrate backside T- back temperature levels were 1500 and 1000 °C, respectively. In cycle conditions (5-min or 1-h hot and 2-min cool), no TBC failure has been observed. This behavior was partially attributed to the unexpected absence of the monoclinic phase of the YSZ in the cycled coatings. Although preliminary, these results are promising regarding increasing the effective high-temperature operational limits of APS YSZ TBCs.

Impact of structure and morphology of nanostructured ceria coating on AISI 304 oxidation kinetics

NASA Astrophysics Data System (ADS)

Aadhavan, R.; Suresh Babu, K.

2017-07-01

Nanostructured ceria-based coatings are shown to be protective against high-temperature oxidation of AISI 304 due to the dynamics of oxidation state and associated defects. However, the processing parameters of deposition have a strong influence in determining the structural and morphological aspects of ceria. The present work focuses on the effect of variation in substrate temperature (50-300 °C) and deposition rate (0.1-50 Å/s) of ceria in electron beam physical vapour evaporation method and correlates the changes in structure and morphology to high-temperature oxidation protection. Unlike deposition rate, substrate temperature exhibited a profound influence on crystallite size (7-18 nm) and oxygen vacancy concentration. Upon isothermal oxidation at 1243 K for 24 h, bare AISI 304 exhibited a linear mass gain with a rate constant of 3.0 ± 0.03 × 10-3 kg2 m-4 s-1 while ceria coating lowered the kinetics by 3-4 orders. Though the thickness of the coating was kept constant at 2 μm, higher deposition rate offered one order lower protection due to the porous nature of the coating. Variation in the substrate temperature modulated the porosity as well as oxygen vacancy concentration and displayed the best protection for coatings deposited at moderate substrate temperature. The present work demonstrates the significance of selecting appropriate processing parameters to obtain the required morphology for efficient high-temperature oxidation protection.

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahul, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Vishwakarma, S. R., E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Verma, Aneet Kumar, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com

2011-10-20

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2

Adaption of a microwave plasma source for low temperature diamond deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulczynski, M.; Reinhard, D.K.; Asmussen, J.

1996-12-31

This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substratemore » heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar K., E-mail: rkrksharma6@gmail.com; Reddy, G. B., E-mail: rkrksharma6@gmail.com

In this report, we synthesize vertically aligned molybdenum trioxide (α−MoO{sub 3}) nanoflakes (NFs) with high aspect ratio (height/thickness >15) on the cobalt coated glass substrates by the plasma assisted sublimation process, employing Mo metal strip as a sublimation source. The effect of substrate temperature, nature of substrate as well as the geometry of the sublimation source (Mo-strip) have been investigated on the morphological, structural and optical properties of the grown NFs, keeping plasma parameters as fixed. The surface morphology, crystalline structure and optical properties of MoO{sub 3} NFs have been studied systematically by using scanning electron microscope (SEM), transmission electronmore » microscope (TEM) with selected area electron diffraction (SAED), X-ray diffractometer, and IR- spectroscopy. The experimental observations endorse that the characteristics of MoO{sub 3} NFs are strongly depend on substrate temperature, substrate nature as well as geometry of Mo-strip. All the observed results are well in consonance with each other.« less

Numerical simulations of sessile droplet evaporating on heated substrate

NASA Astrophysics Data System (ADS)

Chen, Xue; Chen, Paul G.; Ouazzani, Jalil; Liu, Qiusheng

2017-04-01

Motivated by the space project EFILE, a 2D axisymmetric numerical model in the framework of ALE method is developed to investigate the coupled physical mechanism during the evaporation of a pinned drop that partially wets on a heated substrate. The model accounts for mass transport in surrounding air, Marangoni convection inside the drop and heat conduction in the substrate as well as moving interface. Numerical results predict simple scaling laws for the evaporation rate which scales linearly with drop radius but follows a power-law with substrate temperature. It is highlighted that thermal effect of the substrate has a great impact on the temperature profile at the drop surface, which leads to a multicellular thermocapillary flow pattern. In particular, the structure of the multicellular flow behavior induced within a heated drop is mainly controlled by a geometric parameter (aspect ratio). A relationship between the number of thermal cells and the aspect ratio is proposed.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

PLD growth of CoPd thin films and characterization of their magnetic properties by magneto optical Kerr effect

NASA Astrophysics Data System (ADS)

Sedrpooshan, Mehran; Ahmadvand, Hossein; Ranjbar, Mehdi; Salamati, Hadi

2018-06-01

CoPd alloy thin films with different thicknesses and Co/Pd ratios have been deposited on Si (100) substrate by pulsed laser deposition (PLD). The magnetic properties were investigated by using the magneto-optical Kerr effect (MOKE) in both longitudinal and polar geometries. The results show that the films with thickness in the range of 6-24 nm, deposited at a low substrate temperature of 200 °C, are mostly magnetized in the plane of film. Higher deposition temperature forces the magnetic easy axis to orient in the perpendicular direction of the films.

Decreasing the Effective Thermal Conductivity in Glass Supported Thermoelectric Layers.

PubMed

Bethke, Kevin; Andrei, Virgil; Rademann, Klaus

2016-01-01

As thermoelectric devices begin to make their way into commercial applications, the emphasis is put on decreasing the thermal conductivity. In this purely theoretical study, finite element analysis is used to determine the effect of a supporting material on the thermal conductivity of a thermoelectric module. The simulations illustrate the heat transfer along a sample, consisting from Cu, Cu2O and PbTe thermoelectric layers on a 1 mm thick Pyrex glass substrate. The influence of two different types of heating, at a constant temperature and at a constant heat flux, is also investigated. It is revealed that the presence of a supporting material plays an important role on lowering the effective thermal conductivity of the layer-substrate ensemble. By using thinner thermoelectric layers the effective thermal conductivity is further reduced, almost down to the value of the glass substrate. As a result, the temperature gradient becomes steeper for a fixed heating temperature, which allows the production of devices with improved performance under certain conditions. Based on the simulation results, we also propose a model for a robust thin film thermoelectric device. With this suggestion, we invite the thermoelectric community to prove the applicability of the presented concept for practical purposes.

Decreasing the Effective Thermal Conductivity in Glass Supported Thermoelectric Layers

PubMed Central

Bethke, Kevin; Andrei, Virgil; Rademann, Klaus

2016-01-01

As thermoelectric devices begin to make their way into commercial applications, the emphasis is put on decreasing the thermal conductivity. In this purely theoretical study, finite element analysis is used to determine the effect of a supporting material on the thermal conductivity of a thermoelectric module. The simulations illustrate the heat transfer along a sample, consisting from Cu, Cu2O and PbTe thermoelectric layers on a 1 mm thick Pyrex glass substrate. The influence of two different types of heating, at a constant temperature and at a constant heat flux, is also investigated. It is revealed that the presence of a supporting material plays an important role on lowering the effective thermal conductivity of the layer-substrate ensemble. By using thinner thermoelectric layers the effective thermal conductivity is further reduced, almost down to the value of the glass substrate. As a result, the temperature gradient becomes steeper for a fixed heating temperature, which allows the production of devices with improved performance under certain conditions. Based on the simulation results, we also propose a model for a robust thin film thermoelectric device. With this suggestion, we invite the thermoelectric community to prove the applicability of the presented concept for practical purposes. PMID:26982458

Molecular aspect ratio and anchoring strength effects in a confined Gay-Berne liquid crystal

NASA Astrophysics Data System (ADS)

Cañeda-Guzmán, E.; Moreno-Razo, J. A.; Díaz-Herrera, E.; Sambriski, E. J.

2014-04-01

Phase diagrams for Gay-Berne (GB) fluids were obtained from molecular dynamics simulations for GB(2, 5, 1, 2) (i.e. short mesogens) and GB(3, 5, 1, 2) (i.e. long mesogens), which yield isotropic, nematic, and smectic-B phases. The long-mesogen fluid also yields the smectic-A phase. Ordered phases of the long-mesogen fluid form at higher temperatures and lower densities when compared to those of the short-mesogen fluid. The effect of confinement under weak and strong substrate couplings in slab geometry was investigated. Compared to the bulk, the isotropic-nematic transition does not shift in temprature significantly for the weakly coupled substrate in either mesogen fluid. However, the strongly coupled substrate shifts the transition to lower temperature. Confinement induces marked stratification in the short-mesogen fluid. This effect diminishes with distance from the substrate, yielding bulk-like behaviour in the slab central region. Fluid stratification is very weak for the long-mesogen fluid, but the strongly coupled substrate induces 'smectisation', an ordering effect that decays with distance. Orientation of the fluid on the substrate depends on the mesogen. There is no preferred orientation in a plane parallel to the substrate for the weakly coupled case. In the strongly coupled case, the mesogen orientation mimics that of adjacent fluid layers. Planar anchoring is observed with a broad distribution of orientations in the weakly coupled case. In the strongly coupled case, the distribution leans toward planar orientations for the short-mesogen fluid, while a marginal preference for tilting persists in the long-mesogen fluid.

The Effect of Substrate Microstructure on the Heat-Affected Zone Size in Sn-Zn Alloys Due to Adjoining Ni-Al Reactive Multilayer Foil Reaction

DOE PAGES

Hooper, R. J.; Adams, D. P.; Hirschfeld, D.; ...

2015-08-05

The rapid release of energy from reactive multilayer foils can create extreme local temperature gradients near substrate materials. To fully exploit the potential of these materials, a better understanding of the interaction between the substrate or filler material and the foil is needed. In particular, this work investigates how variations in local properties within the substrate (i.e. differences between properties in constituent phases) can affect heat transport into the substrate. Furthermore, this can affect the microstructural evolution observed within the substrate, which may affect the final joint properties. The effect of the initial substrate microstructure on microstructural evolution within themore » heat-affected zone is evaluated experimentally in two Sn-Zn alloys and numerical techniques are utilized to inform the analysis.« less

Scanning electron microscopy of the surfaces of ion implanted SiC

NASA Astrophysics Data System (ADS)

Malherbe, Johan B.; van der Berg, N. G.; Kuhudzai, R. J.; Hlatshwayo, T. T.; Thabethe, T. T.; Odutemowo, O. S.; Theron, C. C.; Friedland, E.; Botha, A. J.; Wendler, E.

2015-07-01

This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.

Laser welding of pre-functionalized glass substrates: a fabrication and chemical stability study

NASA Astrophysics Data System (ADS)

Carvalho, R. R.; Reuvekamp, S.; Zuilhof, H.; Blom, M. T.; Vrouwe, E. X.

2018-01-01

Low-temperature bonding of glass substrates is of great interest in the field of microfluidic-based biosensing, and we study how laser welding could be used for this. This technology allows for the modification of glass channels with temperature-sensitive materials prior to bonding. We study the effects of the welding process by investigation of the thermal degradation of a biotin monolayer and whether it retains the ability to conjugate with fluorescently-labelled streptavidin.

Effect of substrate and post-deposition annealing on nanostructure and optical properties of CdTe thin films

NASA Astrophysics Data System (ADS)

Hasani, Ebrahim; Raoufi, Davood

2018-04-01

Thermal evaporation is one of the promising methods for depositing CdTe thin films, which can obtain the thin films with the small thickness. In this work, CdTe nanoparticles have deposited on SiO2 substrates such as quartz (crystal) and glass (amorphous) at a temperature (Ts) of 150 °C under a vacuum pressure of 2 × 10‑5 mbar. The thickness of CdTe thin films prepared under vacuum pressure is 100 nm. X-ray diffraction analysis (XRD) results showed the formation of CdTe cubic phase with a strong preferential orientation of (111) crystalline plane on both substrates. The grain size (D) in this orientation obtained about 7.41 and 5.48 nm for quartz and glass respectively. Ultraviolet-visible spectroscopy (UV–vis) measurements indicated the optical band gap about 1.5 and 1.52 eV for CdTe thin films deposited on quartz and glass respectively. Furthermore, to show the effect of annealing temperature on structure and optical properties of CdTe thin films on quartz and glass substrates, the thin films have been annealed at temperatures 50 and 70 °C for one hour. The results of this work indicate that the structure’s parameters and optical properties of CdTe thin films change due to increase in annealing temperature.

Effects of substrate heating and vacuum annealing on optical and electrical properties of alumina-doped ZnO films deposited by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Tang, Chien-Jen; Wang, Chun-Yuan; Jaing, Cheng-Chung

2011-10-01

Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al2O3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 °C and 250 °C. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 °C and 450 °C in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10-3 Ω-cm, 6.38 cm2/Vs, 5.08×1020 #/cm3, and 31.48 nm respectively, in vacuum annealing of 450 °C. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10-4 Ω-cm, 6.32 cm2/Vs, 1.13×1021 #/cm3, and 31.56 nm, respectively, when substrate temperature was at 250 °C. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.

Correlation of compressive stress with spalling of plasma sprayed ceramic materials

NASA Technical Reports Server (NTRS)

Mullen, R. L.; Mcdonald, G.; Hendricks, R. C.; Hofle, M. M.

1983-01-01

Ceramics on metal substrates for potential use as high temperature seals or other applications are exposed to forces originating from differences in thermal expansion between the ceramic and the metal substrate. This report develops a relationship between the difference in expansion of the ceramic and the substrate, defines conditions under which shear between the ceramic and the substrate occurs, and those under which bending forces are produced in the ceramic. The off-axis effect of compression forces resulting from high temperature plastic flow of the ceramic producing buckling of the ceramic is developed. Shear is associated with the edge or boundary stresses on the component while bending is associated with the distortion of an interior region. Both modes are significant in predicting life of the ceramic.

Promising Hard Carbon Coatings on Cu Substrates: Corrosion and Tribological Performance with Theoretical Aspect

NASA Astrophysics Data System (ADS)

Kumar, A. Madhan; Babu, R. Suresh; Obot, I. B.; Adesina, Akeem Yusuf; Ibrahim, Ahmed; de Barros, A. L. F.

2018-05-01

Protecting the surface of metals and alloys against corrosion and wear is of abundant importance owing to their widespread applications. In the present work, we report the improved anticorrosion and tribo-mechanical performance of copper (Cu) by a hard carbon (HC) coating synthesized in different pyrolysis temperature. Structural and surface characterization with roughness measurements was systematically investigated using various techniques. Effect of pyrolysis temperature on the corrosion behavior of coated Cu substrates in 0.6 M NaCl solution was evaluated via electrochemical impedance spectroscopy, potentiodynamic polarization. Pin-on-disk wear test of coated Cu substrate showed the influence of the pyrolysis temperature on the wear resistance performance of the HC coatings. According to the obtained results, it could be concluded that the HC coatings synthesized at 1100 °C revealed an enhanced comprehensive performance, revealing their possible utilization as a protective coating for Cu substrates in chloride environment. Monte Carlo simulations have been utilized to elucidate the interaction between the Cu surface and HC coatings.

Promising Hard Carbon Coatings on Cu Substrates: Corrosion and Tribological Performance with Theoretical Aspect

NASA Astrophysics Data System (ADS)

Kumar, A. Madhan; Babu, R. Suresh; Obot, I. B.; Adesina, Akeem Yusuf; Ibrahim, Ahmed; de Barros, A. L. F.

2018-01-01

Protecting the surface of metals and alloys against corrosion and wear is of abundant importance owing to their widespread applications. In the present work, we report the improved anticorrosion and tribo-mechanical performance of copper (Cu) by a hard carbon (HC) coating synthesized in different pyrolysis temperature. Structural and surface characterization with roughness measurements was systematically investigated using various techniques. Effect of pyrolysis temperature on the corrosion behavior of coated Cu substrates in 0.6 M NaCl solution was evaluated via electrochemical impedance spectroscopy, potentiodynamic polarization. Pin-on-disk wear test of coated Cu substrate showed the influence of the pyrolysis temperature on the wear resistance performance of the HC coatings. According to the obtained results, it could be concluded that the HC coatings synthesized at 1100 °C revealed an enhanced comprehensive performance, revealing their possible utilization as a protective coating for Cu substrates in chloride environment. Monte Carlo simulations have been utilized to elucidate the interaction between the Cu surface and HC coatings.

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doganov, Rostislav A.; Özyilmaz, Barbaros; Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explainmore » the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.« less

Chemical sintering of direct-written silver nanowire flexible electrodes under room temperature.

PubMed

Hui, Zhuang; Liu, Yangai; Guo, Wei; Li, Lihang; Mu, Nan; Jin, Chao; Zhu, Ying; Peng, Peng

2017-07-14

Transparent and flexible electrodes on cost effective plastic substrates for wearable electronics have attract great attention recently. Due to the conductivity and flexibility in network form, metal nanowire is regarded as one of the most promising candidates for flexible electrode fabrication. Prior to application, low temperature joining of nanowire processes are required to reduce the resistance of electrodes and simultaneously maintain the dimensionality and uniformity of those nanowires. In the present work, we presented an innovative, robust and cost effective method to minimize the heat effect to plastic substrate and silver nanowires which allows silver nanowire electrodes been directly written on polycarbonate substrate and sintered by different electrolyte solutions at room temperature or near. It has been rigorously demonstrated that the resistance of silver nanowire electrodes has been reduced by 90% after chemical sintering at room temperature due to the joining of silver nanowires at junction areas. After ∼1000 bending cycles, the measured resistance of silver nanowire electrode was stable during both up-bending and down-bending states. The changes of silver nanowires after sintering were characterized using x-ray photoelectron spectroscopy and transmission electron microscopy and a sintering mechanism was proposed and validated. This direct-written silver nanowire electrode with good performance has broad applications in flexible electronics fabrication and packaging.

SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Diffusive charge transport in graphene

NASA Astrophysics Data System (ADS)

Chen, Jianhao

The physical mechanisms limiting the mobility of graphene on SiO 2 are studied and printed graphene devices on a flexible substrate are realized. Intentional addition of charged scattering impurities is used to study the effects of charged impurities. Atomic-scale defects are created by noble-gas ions irradiation to study the effect of unitary scatterers. The results show that charged impurities and atomic-scale defects both lead to conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates. While charged impurities cause intravalley scattering and induce a small change in the minimum conductivity, defects in graphene scatter electrons between the valleys and suppress the minimum conductivity below the metallic limit. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a small resistivity which is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity. Graphene is also made into high mobility transparent and flexible field effect device via the transfer-printing method. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime, and show the promise of graphene as a novel electronic material that have potential applications not only on conventional inorganic substrates, but also on flexible substrates.

Changes in size of nano phase iron inclusions with temperature: Experimental simulation of space weathering effects at high temperature

NASA Astrophysics Data System (ADS)

Rout, S. S.; Moroz, L. V.; Stockhoff, T.; Baither, D.; Bischoff, A.; Hiesinger, H.

2011-10-01

The mean size of nano phase iron inclusions (npFe0), produced during the space weathering of iron-rich regolith of airless solar system bodies, significantly affects visible and near-infrared (VNIR) spectra. To experimentally simulate the change in the size of npFe0 inclusions with increasing temperature, we produced sputter film deposits on a silicon dioxide substrate by sputtering a pressed pellet prepared from fine olivine powder using 600V Ar+ ions. This silicon dioxide substrate covered with the deposit was later heated to 450°C for 24 hours in an oven under argon atmosphere. Initial TEM analysis of the unheated silicon dioxide substrate showed the presence of a ~ 50 nm-thick layer of an amorphous deposit with nano clusters that has not yet been identified.

Cube-textured nickel substrates for high-temperature superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Specht, E.D.; Goyal, A.; Lee, D.F.

1998-02-01

The biaxial textures created in metals by rolling and annealing make them useful substrates for the growth of long lengths of biaxially textured material. The growth of overlayers such as high-temperature superconductors (HTS) require flat substrates with a single, sharp texture. A sharp cube texture is produced in high-purity Ni by rolling and annealing. The authors report the effect of rolling reduction and annealing conditions on the sharpness of the cube texture, the incidence of other orientations, the grain size, and the surface topography. A combination of high reduction, and high temperature annealing in a reducing atmosphere leads to >more » 99% cube texture, with mosaic of 9.0{degree} about the rolling direction (RD), 6.5{degree} about the transverse direction (TD), and 5.0{degree} about the normal direction (ND).« less

Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

PubMed

Zhao, Yuxi; Song, Jeong-Gyu; Ryu, Gyeong Hee; Ko, Kyung Yong; Woo, Whang Je; Kim, Youngjun; Kim, Donghyun; Lim, Jun Hyung; Lee, Sunhee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

2018-05-08

The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

Cryo-scatter measurements of beryllium

NASA Astrophysics Data System (ADS)

Lippey, Barret; Krone-Schmidt, Wilfried

1991-12-01

Bi-directional Reflection Distribution Function measurements were performed as a function of cryogenic temperature for various substrates. Substrates investigated include HIPed and sputtered beryllium produced from different powders and by various manufacturing and polishing processes. In some samples investigated, the BRDF at 10.6 microns increased by a factor of 2 to 5 during cooling from 300 to 30 Kelvin. On repeated temperature cycling the change in BRDF appeared to be totally elastic. The cryo-scatter effect does not occur for all types of beryllium.

Crystalline silicon growth in nickel/a-silicon bilayer

NASA Astrophysics Data System (ADS)

Mohiddon, Md Ahamad; Naidu, K. Lakshun; Dalba, G.; Rocca, F.; Krishna, M. Ghanashyam

2013-02-01

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 °C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Out on a limb: Thermal microenvironments in the tropical forest canopy and their relevance to ants.

PubMed

Stark, Alyssa Y; Adams, Benjamin J; Fredley, Jennifer L; Yanoviak, Stephen P

2017-10-01

Small, cursorial ectotherms like ants often are immersed in the superheated air layers that develop millimeters above exposed, insolated surfaces (i.e., the thermal boundary layer). We quantified the thermal microenvironments around tree branches in the tropical rainforest canopy, and explored the effects of substrate color on the internal body temperature and species composition of arboreal ants. Branch temperatures during the day (09:00-16:00) were hottest (often > 50°C) and most variable on the upper surface, while the lowest and least variable temperatures occurred on the underside. Temperatures on black substrates declined with increasing distance above the surface in both the field and the laboratory. By contrast, a micro-scale temperature inversion occurred above white substrates. Wind events (ca. 2ms -1 ) eliminated these patterns. Internal temperatures of bodies of Cephalotes atratus workers experimentally heated in the laboratory were 6°C warmer on white vs. black substrates, and 6°C cooler than ambient in windy conditions. The composition of ant species foraging at baits differed between black-painted and unpainted tree branches, with a tendency for smaller ants to avoid the significantly hotter black surfaces. Collectively, these outcomes show that ants traversing canopy branches experience very heterogeneous thermal microenvironments that are partly influenced in predictable ways by branch surface coloration and breezy conditions. Copyright © 2017 Elsevier Ltd. All rights reserved.

A continuous flow microfluidic calorimeter: 3-D numerical modeling with aqueous reactants.

PubMed

Sen, Mehmet A; Kowalski, Gregory J; Fiering, Jason; Larson, Dale

2015-03-10

A computational analysis of the reacting flow field, species diffusion and heat transfer processes with thermal boundary layer effects in a microchannel reactor with a coflow configuration was performed. Two parallel adjacent streams of aqueous reactants flow along a wide, shallow, enclosed channel in contact with a substrate, which is affixed to a temperature controlled plate. The Fluent computational fluid dynamics package solved the Navier-Stokes, mass transport and energy equations. The energy model, including the enthalpy of reaction as a nonuniform heat source, was validated by calculating the energy balance at several control volumes in the microchannel. Analysis reveals that the temperature is nearly uniform across the channel thickness, in the direction normal to the substrate surface; hence, measurements made by sensors at or near the surface are representative of the average temperature. Additionally, modeling the channel with a glass substrate and a silicone cover shows that heat transfer is predominantly due to the glass substrate. Finally, using the numerical results, we suggest that a microcalorimeter could be based on this configuration, and that temperature sensors such as optical nanohole array sensors could have sufficient spatial resolution to determine enthalpy of reaction.

A continuous flow microfluidic calorimeter: 3-D numerical modeling with aqueous reactants

PubMed Central

Sen, Mehmet A.; Kowalski, Gregory J.; Fiering, Jason; Larson, Dale

2015-01-01

A computational analysis of the reacting flow field, species diffusion and heat transfer processes with thermal boundary layer effects in a microchannel reactor with a coflow configuration was performed. Two parallel adjacent streams of aqueous reactants flow along a wide, shallow, enclosed channel in contact with a substrate, which is affixed to a temperature controlled plate. The Fluent computational fluid dynamics package solved the Navier–Stokes, mass transport and energy equations. The energy model, including the enthalpy of reaction as a nonuniform heat source, was validated by calculating the energy balance at several control volumes in the microchannel. Analysis reveals that the temperature is nearly uniform across the channel thickness, in the direction normal to the substrate surface; hence, measurements made by sensors at or near the surface are representative of the average temperature. Additionally, modeling the channel with a glass substrate and a silicone cover shows that heat transfer is predominantly due to the glass substrate. Finally, using the numerical results, we suggest that a microcalorimeter could be based on this configuration, and that temperature sensors such as optical nanohole array sensors could have sufficient spatial resolution to determine enthalpy of reaction. PMID:25937678

Effect of the deposition temperature on corrosion resistance and biocompatibility of the hydroxyapatite coatings

NASA Astrophysics Data System (ADS)

Vladescu, A.; Braic, M.; Azem, F. Ak; Titorencu, I.; Braic, V.; Pruna, V.; Kiss, A.; Parau, A. C.; Birlik, I.

2015-11-01

Hydroxyapatite (HAP) ceramics belong to a class of calcium phosphate-based materials, which have been widely used as coatings on titanium medical implants in order to improve bone fixation and thus to increase the lifetime of the implant. In this study, HAP coatings were deposited from pure HAP targets on Ti6Al4V substrates using the radio-frequency magnetron sputtering technique at substrate temperatures ranging from 400 to 800 °C. The surface morphology and the crystallographic structure of the films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The corrosion resistance of the coatings in saliva solution at 37 °C was evaluated by potentiodynamic polarization. Additionally, the human osteosarcoma cell line (MG-63) was used to test the biocompatibility of the coatings. The results showed that all of the coatings grown uniformly and that the increasing substrate temperature induced an increase in their crystallinity. Corrosion performance of the coatings was improved with the increase of the substrate temperature from 400 °C to 800 °C. Furthermore, all the coatings support the attachment and growth of the osteosarcoma cells with regard to the in vitro test findings.

Effect of deposition rate on melting point of copper film catalyst substrate at atomic scale

NASA Astrophysics Data System (ADS)

Marimpul, Rinaldo; Syuhada, Ibnu; Rosikhin, Ahmad; Winata, Toto

2018-03-01

Annealing process of copper film catalyst substrate was studied by molcular dynamics simulation. This copper film catalyst substrate was produced using thermal evaporation method. The annealing process was limited in nanosecond order to observe the mechanism at atomic scale. We found that deposition rate parameter affected the melting point of catalyst substrate. The change of crystalline structure of copper atoms was observed before it had been already at melting point. The optimum annealing temperature was obtained to get the highest percentage of fcc structure on copper film catalyst substrate.

Correlation of compressive and shear stress with spalling of plasma-sprayed ceramic materials

NASA Technical Reports Server (NTRS)

Mullen, R. L.; Mcdonald, G.; Hendricks, R. C.; Hofle, M. M.

1983-01-01

Ceramics on metal substrates for potential use as high temperature seals or other applications are exposed to forces originating from differences in thermal expansion between the ceramic and the metal substrate. This report develops a relationship between the difference in expansion of the ceramic and the substrate, defines conditions under which shear between the ceramic and the substrate occurs, and those under which bending forces are produced in the ceramic. The off-axis effect of compression forces resulting from high temperature plastic flow of the ceramic producing buckling of the ceramic is developed. Shear is associated with the edge or boundary stresses on the component while bending is associated with the distortion of an interior region. Both modes are significant in predicting life of the ceramic. Previously announced in STAR as N83-27016

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Thermistor bolometer radiometer signal contamination due to parasitic heat diffusion

NASA Astrophysics Data System (ADS)

Priestley, Kory J.; Mahan, J. R.; Haeffelin, Martial P.; Savransky, Maxim; Nguyen, Tai K.

1995-12-01

Current efforts are directed at creating a high-level end-to-end numerical model of scanning thermistor bolometer radiometers of the type used in the Earth Radiation Budget Experiment (ERBE) and planned for the clouds and the earth's radiative energy system (CERES) platforms. The first-principle model accurately represents the physical processes relating the electrical signal output to the radiative flux incident to the instrument aperture as well as to the instrument thermal environment. Such models are useful for the optimal design of calibration procedures, data reduction strategies, and the instruments themselves. The modeled thermistor bolometer detectors are approximately 40 micrometers thick and consist of an absorber layer, the thermistor layer, and a thermal impedance layer bonded to a thick aluminum substrate which acts as a heat sink. Thermal and electrical diffusion in the thermistor bolometer detectors is represented by a several-hundred-node- finite-difference formulation, and the temperature field within the aluminum substrate is computed using the finite-element method. The detectors are electrically connected in adjacent arms of a two-active-arm bridge circuit so that the effects of common mode thermal noise are minimized. However, because of a combination of thermistor self heating, loading of the bridge by the bridge amplifier, and the nonlinear thermistor resistance-temperature relationship, bridge deflections can still be provoked by substrate temperature changes, even when the change is uniform across the substrate. Of course, transient temperature gradients which may occur in the substrate between the two detectors will be falsely interpreted as a radiation input. The paper represents the results of an investigation to define the degree of vulnerability of thermistor bolometer radiometers to false signals provoked by uncontrolled temperature fluctuations in the substrate.

Molecular dynamics simulation of Coulomb explosion, melting and shock wave creation in silicon after an ionization pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Zhongyu; Shao, Lin, E-mail: lshao@tamu.edu; Chen, Di

Strong electronic stopping power of swift ions in a semiconducting or insulating substrate can lead to localized electron stripping. The subsequent repulsive interactions among charged target atoms can cause Coulomb explosion. Using molecular dynamics simulation, we simulate Coulomb explosion in silicon by introducing an ionization pulse lasting for different periods, and at different substrate temperatures. We find that the longer the pulse period, the larger the melting radius. The observation can be explained by a critical energy density model assuming that melting required thermal energy density is a constant value and the total thermal energy gained from Coulomb explosion ismore » linearly proportional to the ionization period. Our studies also show that melting radius is larger at higher substrate temperatures. The temperature effect is explained due to a longer structural relaxation above the melting temperature at original ionization boundary due to lower heat dissipation rates. Furthermore, simulations show the formation of shock waves, created due to the compression from the melting core.« less

Flexible thermochromic window based on hybridized VO2/graphene.

PubMed

Kim, Hyeongkeun; Kim, Yena; Kim, Keun Soo; Jeong, Hu Young; Jang, A-Rang; Han, Seung Ho; Yoon, Dae Ho; Suh, Kwang S; Shin, Hyeon Suk; Kim, TaeYoung; Yang, Woo Seok

2013-07-23

Large-scale integration of vanadium dioxide (VO2) on mechanically flexible substrates is critical to the realization of flexible smart window films that can respond to environmental temperatures to modulate light transmittance. Until now, the formation of highly crystalline and stoichiometric VO2 on flexible substrate has not been demonstrated due to the high-temperature condition for VO2 growth. Here, we demonstrate a VO2-based thermochromic film with unprecedented mechanical flexibility by employing graphene as a versatile platform for VO2. The graphene effectively functions as an atomically thin, flexible, yet robust support which enables the formation of stoichiometric VO2 crystals with temperature-driven phase transition characteristics. The graphene-supported VO2 was capable of being transferred to a plastic substrate, forming a new type of flexible thermochromic film. The flexible VO2 films were then integrated into the mock-up house, exhibiting its efficient operation to reduce the in-house temperature under infrared irradiation. These results provide important progress for the fabrication of flexible thermochromic films for energy-saving windows.

Thermal Modelling of Various Thermal Barrier Coatings in a High Flux Rocket Engine

NASA Technical Reports Server (NTRS)

Nesbitt, James A.

1998-01-01

A thermal model was developed to predict the thermal response of coated and uncoated tubes tested in a H2/O2 rocket engine. Temperatures were predicted for traditional APS ZrO2-Y2O3 thermal barrier coatings, as well as APS and LPPS ZrO2-Y2O3/NiCrAlY cermet coatings. Good agreement was observed between predicted and measured metal temperatures at locations near the tube surface or at the inner tube wall. The thermal model was also used to quantitatively examine the effect of various coating system parameters on the temperatures in the substrate and coating. Accordingly, the effect of the presence a metallic bond coat and the effect of radiation from the surface of the ceramic layer were examined. In addition, the effect of a variation in the values of the thermal conductivity of the ceramic layer was also investigated. It was shown that a variation in the thermal conductivity of the ceramic layer, on the order of that reported in the literature for plasma sprayed ZrO2-Y2O3 coatings, can result in temperature differences in the substrate greater than 100 C, a much greater effect than that due to the presence of a bond coat or radiation from the ceramic layer. The thermal model was also used to predict the thermal response of a coated rod in order to quantify the difference in the metal temperatures between the two substrate geometries in order to explain the previously-observed increased life of coatings on rods over that on tubes. It was shown that for the short duration testing in the rocket engine, the temperature in a tube could exceed that in a rod by more than 100 C. Lastly, a two-dimensional model was developed to evaluate the effect of tangential heat transfer around the tube and its impact on reducing the stagnation point temperature. It was also shown that tangential heat transfer does not significantly reduce the stagnation point temperature, thus allowing application of a simpler, one-dimensional model for comparing measured and predicted stagnation point temperatures.

Comparison Actin- and Glass-Supported Phospholipid Bilayer Diffusion Coefficients

PubMed Central

Sterling, Sarah M.; Dawes, Ryan; Allgeyer, Edward S.; Ashworth, Sharon L.; Neivandt, David J.

2015-01-01

The formation of biomimetic lipid membranes has the potential to provide insights into cellular lipid membrane dynamics. The construction of such membranes necessitates not only the utilization of appropriate lipids, but also physiologically relevant substrate/support materials. The substrate materials employed have been shown to have demonstrable effects on the behavior of the overlying lipid membrane, and thus must be studied before use as a model cushion support. To our knowledge, we report the formation and investigation of a novel actin protein-supported lipid membrane. Specifically, inner leaflet lateral mobility of globular actin-supported DMPC (1,2-dimyristoyl-sn-glycero-3-phosphocholine) bilayers, deposited via the Langmuir-Blodgett/Langmuir Schaefer methodology, was investigated by z-scan fluorescence correlation spectroscopy across a temperature range of 20–44°C. The actin substrate was found to decrease the diffusion coefficient when compared to an identical membrane supported on glass. The depression of the diffusion coefficient occurred across all measured temperatures. These results indicated that the actin substrate exerted a direct effect on the fluidity of the lipid membrane and highlighted the fact that the choice of substrate/support is critical in studies of model lipid membranes. PMID:25902434

Effect of storage conditions on the weight and appearance of dried blood spot samples on various cellulose-based substrates.

PubMed

Denniff, Philip; Spooner, Neil

2010-11-01

Before shipping and storage, dried blood spot (DBS) samples must be dried in order to protect the integrity of the spots. In this article, we examine the time required to dry blood spot samples and the effects of different environmental conditions on their integrity. Under ambient laboratory conditions, DBS samples on Whatman 903(®), FTA(®) and FTA(®) Elute substrates are dry within 90 min of spotting. An additional 5% of moisture is lost during subsequent storage with desiccant. When exposed to elevated conditions of temperature and relative humidity, the DBS samples absorb moisture. DBS samples on FTA lose this moisture on being returned to ambient conditions. DBS samples on 903 show no visible signs of deterioration when stored at elevated conditions. However, these conditions cause the DBS to diffuse through the FTA Elute substrate. Blood spots are dry within 90 min of spotting. However, the substrates examined behave differently when exposed to conditions of high relative humidity and temperature, in some cases resulting in the integrity of the substrate and DBS sample being compromised. It is recommended that these factors be investigated as part of method development and validation.

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.

PubMed

Muhammed, Mufasila M; Alwadai, Norah; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S

2017-10-04

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga 2 O 3 ) substrate, obtained using a straightforward growth process that does not require a high-cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multiquantum well (MQW) grown on the masked β-Ga 2 O 3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ∼86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert

Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

The thickness effect of pre-deposited catalyst film on carbon nanotube growth by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Lowndes, Douglas H.

2001-03-01

Chemical vapor deposition (CVD) of multi wall carbon nanotubes (MWCNTs) was realized on a substrate with a layer of iron film used as a catalyst. The catalyst film was pre-deposited in an electron-gun evaporator equipped with a movable shutter which partially blocks the beam during the evaporation process to produce a catalyst film with a continuously changing thickness from 0 to 60 nm. This technique creates a growth environment in which the film thickness is the only variable and eliminates sample-to-sample variations, enabling a systematic study of the thickness effect of the catalyst film on CNT growth. After the deposition of the catalyst film, the sample was immediately transferred into a CVD chamber where CNT growth was performed. Using Acetylene (C_2H_2) as a carbon-source gas, at the substrate temperature of around 700^oC, MWCNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature from 640^oC to 800^oC. There appears to be no strong correlation between the film thickness and the diameter of the tubes. At the substrate temperature of over 900^oC, the deposited carbon formed graphite sheets surrounding the catalyst particles and no CNTs were observed. A plot of the critical thickness of the catalyst film where CNTs start to grow as a function of the substrate temperature has obtained, which can be served as a reference for selecting the growth parameter in MWCNT growth. The significance of these experimental trends is discussed within the framework of the diffusion model for MWCNT growth.

Growth kinetics of indium metal atoms on Si(1 1 2) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raj, Vidur; Chauhan, Amit Kumar Singh; Gupta, Govind, E-mail: govind@nplindia.org

Graphical abstract: Controlled growth of indium atoms on Si(1 1 2) surface has been carried out systematically and the influence of substrate temperature on the kinetics is analysed under various growth conditions. Temperature induced anomalous layer-to-clusters transformation during thermal desorption has also been reported. - Highlights: • Controlled growth of indium atoms on Si(1 1 2) surface & their thermal stability. • Influence of substrate temperature on the kinetics under various growth conditions. • Temperature induced layer-to-clusters transformation during thermal desorption. - Abstract: The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(1 1 2)more » surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) ∼250 °C follows Frank–van der Merve growth mode whereas at temperatures ≥450 °C, In growth evolves through Volmer–Weber growth mode. Thermal desorption studies of RT and 250 °C grown In/Si(1 1 2) systems show temperature induced rearrangement of In atoms over Si(1 1 2) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(1 1 2) system are calculated to be 2.5 eV and 1.52 eV, while for HT-250 °C the values are found to be 1.6 eV and 1.3 eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(1 1 2) surface.« less

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

NASA Astrophysics Data System (ADS)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Optimization of CMCase production from sorghum straw by Aspergillus terreus SUK-1 under solid substrate fermentation using response surface methodology

NASA Astrophysics Data System (ADS)

Tibin, El Mubarak Musa; Al-Shorgani, Najeeb Kaid Naseer; Abuelhassan, Nawal Noureldaim; Hamid, Aidil Abdul; Kalil, Mohd Sahaid; Yusoff, Wan Mohtar Wan

2013-11-01

The cellulase production using sorghum straw as substrate by fungal culture of Aspergillus terreus SUK-1 was investigated in solid substrate fermentation (SSF). The optimum CMCase was achieved by testing most effective fermentation parameters which were: incubation temperature, pH and moisture content using Response Surface Methodology (RSM) based on Central Composite Design (CCD). The carboxymethyl cellulase activity (CMCase) was measured as the defining factor. The results were analysed by analysis of variance (ANOVA) and the regression quadratic model was obtained. The model was found to be significant (p<0.05) and the effect of temperature (25-40°C) and pH (4-7) was found to be not significant on CMCase activity whereas the moisture content was significant in the SSF conditions employed. The high yield of predicted CMCase activity (0.2 U/ml) was obtained under the optimized conditions (temperature 40 □C, pH 5.4 and moisture content of 80%). The model was validated by applying the optimized conditions and it was found that the model was valid.

Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Shinichi; Yamada, Tomoaki; Takahashi, Kenji

2009-03-15

(Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} (BST) films were deposited on (111)Pt/TiO{sub 2}/SiO{sub 2}/Al{sub 2}O{sub 3} substrates by rf sputtering. By inserting a thin layer of SrRuO{sub 3} in between BST film and (111)Pt electrode, the BST films grew fully (111)-oriented without any other orientations. In addition, it enables us to reduce the growth temperature of BST films while keeping the dielectric constant and tunability as high as those of BST films directly deposited on Pt at higher temperatures. The dielectric loss of the films on SrRuO{sub 3}-top substrates was comparable to that on Pt-top substrates for the same level of dielectricmore » constant. The results suggest that the SrRuO{sub 3} thin layer on (111)Pt electrode is an effective approach to growing highly crystalline BST films with (111) orientation at lower deposition temperatures.« less

Influence of Substrate Temperature on the Transformation Front Velocities That Determine Thermal Stability of Vapor-Deposited Glasses

DOE PAGES

Dalal, Shakeel S.; Ediger, M. D.

2015-02-09

Stable organic glasses prepared by physical vapor deposition transform into the supercooled liquid via propagating fronts of molecular mobility, a mechanism different from that exhibited by glasses prepared by cooling the liquid. In this paper, we show that spectroscopic ellipsometry can directly observe this front-based mechanism in real time and explore how the velocity of the front depends upon the substrate temperature during deposition. For the model glass former indomethacin, we detect surface-initiated mobility fronts in glasses formed at substrate temperatures between 0.68T g and 0.94T g. At each of two annealing temperatures, the substrate temperature during deposition can changemore » the transformation front velocity by a factor of 6, and these changes are imperfectly correlated with the density of the glass. We also observe substrate-initiated fronts at some substrate temperatures. By connecting with theoretical work, we are able to infer the relative mobilities of stable glasses prepared at different substrate temperatures. Finally, an understanding of the transformation behavior of vapor-deposited glasses may be relevant for extending the lifetime of organic semiconducting devices.« less

Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

NASA Astrophysics Data System (ADS)

Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

2018-05-01

Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

Effect of substrate temperature in the synthesis of BN nanostructures

NASA Astrophysics Data System (ADS)

Sajjad, M.; Zhang, H. X.; Peng, X. Y.; Feng, P. X.

2011-06-01

Boron nitride (BN) nanostructures were grown on molybdenum discs at different substrate temperatures using the short-pulse laser plasma deposition technique. Large numbers of randomly oriented nanorods of fiber-like structures were obtained. The variation in the length and diameter of the nanorods as a function of the substrate temperature was systematically studied. The surface morphologies of the samples were studied using scanning electron microscopy. Energy dispersive x-ray spectroscopy confirmed that both the elements boron and nitrogen are dominant in the nanostructure. The x-ray diffraction (XRD) technique was used to analyse BN phases. The XRD peak that appeared at 26° showed the presence of hexagonal BN phase, whereas the peak at 44° was related to cubic BN content in the samples. Raman spectroscopic analysis showed vibrational modes of sp2- and sp3-type bonding in the sample. The Raman spectra agreed well with XRD results.

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

2014-12-01

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

A facile and cost-effective TEM grid approach to design gold nano-structured substrates for high throughput plasmonic sensitive detection of biomolecules.

PubMed

Jia, Kun; Bijeon, Jean Louis; Adam, Pierre Michel; Ionescu, Rodica Elena

2013-02-21

A commercial TEM grid was used as a mask for the creation of extremely well-organized gold micro-/nano-structures on a glass substrate via a high temperature annealing process at 500 °C. The structured substrate was (bio)functionalized and used for the high throughput LSPR immunosensing of different concentrations of a model protein named bovine serum albumin.

Fabrication of a superhydrophobic coating with high adhesive effect to substrates and tunable wettability

NASA Astrophysics Data System (ADS)

Li, Yuan; Zhang, Zhaozhu; Zhu, Xiaotao; Men, Xuehu; Ge, Bo; Zhou, Xiaoyan

2015-02-01

In this paper, a new superhydrophobic coating was successfully prefabricated by a facile sol-gel process which was made up of first the surface chemical reaction of (3-Glycidyloxypropyl) trimethoxysilane (A-187) and SiO2 particles and subsequent spray-coating onto the substrate. Further hardening treatment and surface fluorination allowed the SiO2 coating with the optimum mass ratio of 2.0:1 to exhibit nice superhydrophobic property and high adhesive effect to substrates. Our researches indicated that the mass ratio of A-187 and SiO2 particles could significantly control the surface morphology (or the wettability) and affect adhesion force of the superhydrophobic coating to substrates. In the process, hardening temperature was quite important for rapid evaporation of the solvent and then fast hardening of the coating despite the absence of the similar effect to the mass ratio of A-187 and SiO2 particles on the superhydrophobic coating, and moreover, a higher hardening temperature could also highly improve transparency of the superhydrophobic coating. These findings suggest that the superhydrophobic coating should have promising commercial applications as a self-cleaning product.

Screen-Cage Ion Plating Of Silver On Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

1995-01-01

Screen-cage ion plating (SCIP) cost-effective technique offering high throwing power for deposition of adherent metal films on ceramic substrates. Applies silver films to complexly shaped substrates of polycrystalline alumina. Silver adheres tenaciously and reduces friction. SCIP holds promise for applying lubricating soft metallic films to high-temperature ceramic components of advanced combustion engines. Other potential uses include coating substrates with metal for protection against corrosion, depositing electrical conductors on dielectric substrates, making optically reflective or electrically or thermally conductive surface layers, and applying decorative metal coats to ceramic trophies or sculptures.

DC-pulse atmospheric-pressure plasma jet and dielectric barrier discharge surface treatments on fluorine-doped tin oxide for perovskite solar cell application

NASA Astrophysics Data System (ADS)

Tsai, Jui-Hsuan; Cheng, I.-Chun; Hsu, Cheng-Che; Chen, Jian-Zhang

2018-01-01

Nitrogen DC-pulse atmospheric-pressure plasma jet (APPJ) and nitrogen dielectric barrier discharge (DBD) were applied to pre-treat fluorine-doped tin oxide (FTO) glass substrates for perovskite solar cells (PSCs). Nitrogen DC-pulse APPJ treatment (substrate temperature: ~400 °C) for 10 s can effectively increase the wettability, whereas nitrogen DBD treatment (maximum substrate temperature: ~140 °C) achieved limited improvement in wettability even with increased treatment time of 60 s. XPS results indicate that 10 s APPJ, 60 s DBD, and 15 min UV-ozone treatment of FTO glass substrates can decontaminate the surface. A PSC fabricated on APPJ-treated FTO showed the highest power conversion efficiency (PCE) of 14.90%; by contrast, a PSC with nitrogen DBD-treated FTO shows slightly lower PCE of 12.57% which was comparable to that of a PSC on FTO treated by a 15 min UV-ozone process. Both nitrogen DC-pulse APPJ and nitrogen DBD can decontaminate FTO substrates and can be applied for the substrate cleaning step of PSC.

Protein dynamics promote hydride tunnelling in substrate oxidation by aryl-alcohol oxidase.

PubMed

Carro, Juan; Martínez-Júlvez, Marta; Medina, Milagros; Martínez, Angel T; Ferreira, Patricia

2017-11-01

The temperature dependence of hydride transfer from the substrate to the N5 of the FAD cofactor during the reductive half-reaction of Pleurotus eryngii aryl-alcohol oxidase (AAO) is assessed here. Kinetic isotope effects on both the pre-steady state reduction of the enzyme and its steady-state kinetics, with differently deuterated substrates, suggest an environmentally-coupled quantum-mechanical tunnelling process. Moreover, those kinetic data, along with the crystallographic structure of the enzyme in complex with a substrate analogue, indicate that AAO shows a pre-organized active site that would only require the approaching of the hydride donor and acceptor for the tunnelled transfer to take place. Modification of the enzyme's active-site architecture by replacement of Tyr92, a residue establishing hydrophobic interactions with the substrate analogue in the crystal structure, in the Y92F, Y92L and Y92W variants resulted in different temperature dependence patterns that indicated a role of this residue in modulating the transfer reaction.

A multiphase mixture model for substrate concentration distribution characteristics and photo-hydrogen production performance of the entrapped-cell photobioreactor.

PubMed

Guo, Cheng-Long; Cao, Hong-Xia; Pei, Hong-Shan; Guo, Fei-Qiang; Liu, Da-Meng

2015-04-01

A multiphase mixture model was developed for revealing the interaction mechanism between biochemical reactions and transfer processes in the entrapped-cell photobioreactor packed with gel granules containing Rhodopseudomonas palustris CQK 01. The effects of difference operation parameters, including operation temperature, influent medium pH value and porosity of packed bed, on substrate concentration distribution characteristics and photo-hydrogen production performance were investigated. The results showed that the model predictions were in good agreement with the experimental data reported. Moreover, the operation temperature of 30 °C and the influent medium pH value of 7 were the most suitable conditions for photo-hydrogen production by biodegrading substrate. In addition, the lower porosity of packed bed was beneficial to enhance photo-hydrogen production performance owing to the improvement on the amount of substrate transferred into gel granules caused by the increased specific area for substrate transfer in the elemental volume. Copyright © 2015 Elsevier Ltd. All rights reserved.

Molecular dynamics study of the growth of a metal nanoparticle array by solid dewetting

NASA Astrophysics Data System (ADS)

Luan, Yanhua; Li, Yanru; Nie, Tiaoping; Yu, Jun; Meng, Lijun

2018-03-01

We investigated the effect of the substrate and the ambient temperature on the growth of a metal nanoparticle array (nanoarray) on a solid-patterned substrate by dewetting a Au liquid film using an atomic simulation technique. The patterned substrate was constructed by introducing different interaction potentials for two atom groups ( C 1 and C 2) in the graphene-like substrate. The C 1 group had a stronger interaction between the Au film and the substrate and was composed of regularly distributed circular disks with radius R and distance D between the centers of neighboring disks. Our simulation results demonstrate that R and D have a strikingly different influence on the growth of the nanoparticle arrays. The degree of order of the nanoarray increases first before it reaches a peak and then decreases for increasing R at fixed D. However, the degree of order increases monotonously when D is increased and reaches a saturated value beyond a critical value of D for a fixed R. Interestingly, a labyrinth-like structure appeared during the dewetting process of the metal film. The simulation results also indicated that the temperature was an important factor in controlling the properties of the nanoarray. An appropriate temperature leads to an optimized nanoarray with a uniform grain size and well-ordered particle distribution. These results are important for understanding the dewetting behaviors of metal films on solid substrates and understanding the growth of highly ordered metal nanoarrays using a solid-patterned substrate method.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hooper, R. J.; Adams, D. P.; Hirschfeld, D.

The rapid release of energy from reactive multilayer foils can create extreme local temperature gradients near substrate materials. To fully exploit the potential of these materials, a better understanding of the interaction between the substrate or filler material and the foil is needed. In particular, this work investigates how variations in local properties within the substrate (i.e. differences between properties in constituent phases) can affect heat transport into the substrate. Furthermore, this can affect the microstructural evolution observed within the substrate, which may affect the final joint properties. The effect of the initial substrate microstructure on microstructural evolution within themore » heat-affected zone is evaluated experimentally in two Sn-Zn alloys and numerical techniques are utilized to inform the analysis.« less

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Immobilization of Iron Nanoparticles on Multi Substrates and Its Reduction Removal of Chromium (VI) from Waste Streams

EPA Science Inventory

This article describes the in-situ synthesis and immobilization of iron nanoparticles on several substrates at room temperature using NaBH4 as a reducing agent and ascorbic acid as capping agent. The method is very effective in protecting iron nanoparticles from air oxidation for...

Pectinase production by Aspergillus niger using banana (Musa balbisiana) peel as substrate and its effect on clarification of banana juice.

PubMed

Barman, Sumi; Sit, Nandan; Badwaik, Laxmikant S; Deka, Sankar C

2015-06-01

Optimization of substrate concentration, time of incubation and temperature for crude pectinase production from A. niger was carried out using Bhimkol banana (Musa balbisiana) peel as substrate. The crude pectinase produced was partially purified using ethanol and effectiveness of crude and partially purified pectinase was studied for banana juice clarification. The optimum substrate concentration, incubation time and temperature of incubation were 8.07 %, 65.82 h and 32.37 °C respectively, and the polygalacturonase (PG) activity achieved was 6.6 U/ml for crude pectinase. The partially purified enzyme showed more than 3 times of polygalacturonase activity as compared to the crude enzyme. The SDS-PAGE profile showed that the molecular weight of proteins present in the different pectinases varied from 34 to 42 kDa. The study further revealed that highest clarification was achieved when raw banana juice was incubated for 60 min with 2 % concentration of partially purified pectinase and the absorbance obtained was 0.10.

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition

NASA Astrophysics Data System (ADS)

Khare, C.; Gerlach, J. W.; Höche, T.; Fuhrmann, B.; Leipner, H. S.; Rauschenbach, B.

2012-10-01

Post-deposition thermal annealing of glancing angle deposited Ge nanocolumn arrays was carried out in a continuous Ar-flow at temperatures ranging from TA = 300 to 800 °C for different annealing durations. Morphological alterations and the recrystallization process induced by the thermal annealing treatment were investigated for the Ge nanocolumns deposited on planar and pre-patterned Si substrates. From X-ray diffraction (XRD) measurements, the films annealed at TA ≥ 500 °C were found to be polycrystalline. On planar Si substrates, at TA = 600 °C nanocolumns exhibited strong coarsening and merging, while a complete disintegration of the nanocolumns was detected at TA = 700 °C. The morphology of nanostructures deposited on pre-patterned substrates differs substantially, where the merging or column-disintegration effect was absent at elevated annealing temperatures. The two-arm-chevron nanostructures grown on pre-patterned substrates retained their complex shape and morphology, after extended annealing intervals. Investigations by transmission electron microscopy revealed nanocrystalline domains of the order of 5-30 nm (in diameter) present within the chevron structures after the annealing treatment.

In-situ TEM investigations of graphic-epitaxy and small particles

NASA Technical Reports Server (NTRS)

Heinemann, K.

1983-01-01

Palladium was deposited inside a controlled-vacuum specimen chamber of a transmission electron microscope (TEM) onto MgO and alpha-alumina substrate surfaces. Annealing and various effects of gas exposure of the particulate Pd deposits were studied in-situ by high resolution TEM and electron diffraction. Whereas substrate temperatures of 500 C or annealing of room temperature (RT) deposits to 500 C were needed to obtain epitaxy on sapphire, RT deposits on MgO were perfectly epitaxial. For Pd/MgO a lattice expansion of 2 to 4% was noted; the highest values of expansion were found for the smallest particles. The lattice expansion of small Pd particles on alumina substrates was less than 1%. Long-time RT exposure of Pd/MgO in a vacuum yielded some moblity and coalescence events, but notably fewer than for Pd on sapphire. Exposure to air or oxygen greatly enhanced the particle mobility and coalescence and also resulted in the flattening of Pd particles on MgO substrates. Electron-beam irradiation further enhanced this effect. Exposure to air for several tens of hours of Pd/MgO led to strong coalescence.

Methane production and consumption in grassland and boreal ecosystems

NASA Technical Reports Server (NTRS)

Schimel, David S.; Burke, Ingrid C.; Johnston, Carol; Pastor, John

1994-01-01

The objectives of the this project were to develop a mechanistic understanding of methane production and oxidation suitable for incorporation into spatially explicit models for spatial extrapolation. Field studies were undertaken in Minnesota, Canada, and Colorado to explore the process controls over the two microbial mediated methane transformations in a range of environments. Field measurements were done in conjunction with ongoing studies in Canada (the Canadian Northern Wetlands Projects: NOWES) and in Colorado (The Shortgrass Steppe Long Term Ecological Research Project: LTER). One of the central hypotheses of the proposal was that methane production should be substrate limited, as well as being controlled by physical variables influencing microbial activity (temperature, oxidation status, and pH). Laboratory studies of peats from Canada and Minnesota (Northern and Southern Boreal) were conducted with amendments of a methanogenic substrate at multiple temperatures and at multiple pHs (the latter by titrating samples). The studies showed control by substrate, pH, and temperature in order in anaerobic samples. Field and laboratory manipulations of natural plant litter, rather than an acetogenic substrate, showed similarly large effects. The studies concluded that substrate is an important control over methanogenesis, that substrate availability in the field is closely coupled to the chemistry of the dominant vegetation influencing its decomposition rate, that most methane is produced from recent plant litter, and that landscape changes in pH are an important control, highly correlated with vegetation.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

NASA Astrophysics Data System (ADS)

Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul

2018-07-01

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.

Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1-xAs buffers

NASA Astrophysics Data System (ADS)

Chen, X. Y.; Gu, Y.; Zhang, Y. G.; Ma, Y. J.; Du, B.; Zhang, J.; Ji, W. Y.; Shi, Y. H.; Zhu, Y.

2018-04-01

Improved quality of gas source molecular beam epitaxy grown In0.83Ga0.17As layer on GaAs substrate was achieved by adopting a two-step InxAl1-xAs metamorphic buffer at different temperatures. With a high-temperature In0.83Al0.17As template following a low-temperature composition continuously graded InxAl1-xAs (x = 0.05-0.86) buffer, better structural, optical and electrical properties of succeeding In0.83Ga0.17As were confirmed by atomic force microscopy, photoluminescence and Hall-effect measurements. Cross-sectional transmission electron microscopy revealed significant effect of the two-step temperature grown InAlAs buffer layers on the inhibition of threading dislocations due to the deposition of high density nuclei on GaAs substrate at the low growth temperature. The limited reduction for the dark current of GaAs-based In0.83Ga0.17As photodetectors on the two-step temperature grown InxAl1-xAs buffer layers was ascribed to the contribution of impurities caused by the low growth temperature of InAlAs buffers.

Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, R. Rakesh, E-mail: rakesh.rajaboina@gmail.com; Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066; Rao, K. Narasimha

2014-04-01

Highlights: • ITO nanowires were grown by e-beam evaporation method. • ITO nanowires growth done at low substrate temperature of 350 °C. • Nanowires growth was carried out without use of catalyst and reactive oxygen gas. • Nanowires growth proceeds via self catalytic VLS growth. • Grown nanowires have diameter 10–20 nm and length 1–4 μm long. • ITO nanowire films have shown good antireflection property. - Abstract: We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250–400more » °C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (∼10–15 nm) and micron long ITO NWs growth was observed in a temperature window of 300–400 °C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300–400 °C have shown ∼2–6% reflection and ∼70–85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices.« less

Drug transport by reconstituted P-glycoprotein in proteoliposomes. Effect of substrates and modulators, and dependence on bilayer phase state.

PubMed

Lu, P; Liu, R; Sharom, F J

2001-03-01

The P-glycoprotein multidrug transporter (Pgp) is an active efflux pump for chemotherapeutic drugs, natural products and hydrophobic peptides. Pgp is envisaged as a 'hydrophobic vacuum cleaner', and drugs are believed to gain access to the substrate binding sites from within the membrane, rather than from the aqueous phase. The intimate association of both Pgp and its substrates with the membrane suggests that its function may be regulated by the biophysical properties of the lipid bilayer. Using the high affinity fluorescent substrate tetramethylrosamine (TMR), we have monitored, in real time, transport in proteoliposomes containing reconstituted Pgp. The TMR concentration gradient generated by Pgp was collapsed by the addition of either the ATPase inhibitor, vanadate, or Pgp modulators. TMR transport by Pgp obeyed Michaelis--Menten kinetics with respect to both of its substrates. The Km for ATP was 0.48 mM, close to the K(m) for ATP hydrolysis, and the K(m) for TMR was 0.3 microM. TMR transport was inhibited in a concentration-dependent fashion by verapamil and cyclosporin A, and activated (probably by a positive allosteric effect) by the transport substrate colchicine. TMR transport by Pgp reconstituted into proteoliposomes composed of two synthetic phosphatidylcholines showed a highly unusual biphasic temperature dependence. The rate of TMR transport was relatively high in the rigid gel phase, reached a maximum at the melting temperature of the bilayer, and then decreased in the fluid liquid crystalline phase. This pattern of temperature dependence suggests that the rate of drug transport by Pgp may be dominated by partitioning of drug into the bilayer.

Wetting Transition of Nonpolar Neutral Molecule System on a Neutral and Atomic Length Scale Roughness Substrate

NASA Astrophysics Data System (ADS)

Zhou, Shiqi

2018-03-01

One recently proposed new method for accurately determining wetting temperature is applied to the wetting transition occurring in a single component nonpolar neutral molecule system near a neutral planar substrate with roughness produced by cosinusoidal modulation(s). New observations are summarized into five points: (i) for a planar substrate superimposed with one cosinusoidal modulation, with increasing of the periodicity length or the surface attraction force field, or decreasing of the amplitude, wetting temperature T_W drops accordingly and the three parameters show multiplication effect; moreover, both the periodicity length and amplitude effect curves display pole phenomena and saturation phenomena, and the T_W saturation occurs at small (for case of large amplitude) or large (for case of small amplitude) periodicity length side, respectively. (ii) In the case of the planar substrate superimposed with two cosinusoidal modulations with equal periodicity length, the initial phase difference is critical issue that influences the T_W, which decreases with the initial phase difference. (iii) In the case of the planar substrate superimposed with two cosinusoidal modulations with zero phase difference, change of the T_W with one periodicity length under the condition of another periodicity length unchanged is non-monotonous. (iv) When the parameters are chosen such that the T_W draws ever closer to the bulk critical temperature, wetting transition on the roughness substrate eventually does not occur. (v) The present microscopic calculation challenges traditional macroscopic theory by confirming that the atomic length scale roughness always renders the surface less hydrophilic and whereas the mesoscopical roughness renders the surface more hydrophilic. All of these observations summarized can be reasonably explained by the relative strength of the attraction actually enjoyed by the surface gas molecules to the attraction the gas molecules can get when in bulk.

Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

2018-06-01

The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fcc structure in the deposited Cu thin films was 〈1 1 1〉 oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the film-substrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

NASA Astrophysics Data System (ADS)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Influence of substrate temperature on properties of MgF 2 coatings

NASA Astrophysics Data System (ADS)

Yu, Hua; Qi, Hongji; Cui, Yun; Shen, Yanming; Shao, JianDa; Fan, ZhengXiu

2007-05-01

Thermal boat evaporation was employed to prepare MgF 2 single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 °C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 °C that the refractive index was higher than those deposited at 244 and 277 °C. The tensile residual stresses were exhibited in all MgF 2 films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 °C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail.

Effects of temperature and cadmium exposure on the mitochondria of oysters (Crassostrea virginica) exposed to hypoxia and subsequent reoxygenation.

PubMed

Ivanina, Anna V; Kurochkin, Ilya O; Leamy, Larry; Sokolova, Inna M

2012-09-15

Intertidal bivalves are commonly exposed to multiple stressors including periodic hypoxia, temperature fluctuations and pollution, which can strongly affect energy metabolism. We used top-down control and elasticity analyses to determine the interactive effects of intermittent hypoxia, cadmium (Cd) exposure and acute temperature stress on mitochondria of the eastern oyster Crassostrea virginica. Oysters were acclimated at 20°C for 30 days in the absence or presence of 50 μg l(-1) Cd and then subjected to a long-term hypoxia (6 days at <0.5% O(2) in seawater) followed by normoxic recovery. Mitochondrial function was assessed at the acclimation temperature (20°C), or at elevated temperature (30°C) mimicking acute temperature stress in the intertidal zone. In the absence of Cd or temperature stress, mitochondria of oysters showed high resilience to transient hypoxia. In control oysters at 20°C, hypoxia/reoxygenation induced elevated flux capacity of all three studied mitochondrial subsystems (substrate oxidation, phosphorylation and proton leak) and resulted in a mild depolarization of resting mitochondria. Elevated proton conductance and enhanced capacity of phosphorylation and substrate oxidation subsystems may confer resistance to hypoxia/reoxygenation stress in oyster mitochondria by alleviating production of reactive oxygen species and maintaining high aerobic capacity and ATP synthesis rates during recovery. Exposure to environmental stressors such as Cd and elevated temperatures abolished the putative adaptive responses of the substrate oxidation and phosphorylation subsystems, and strongly enhanced proton leak in mitochondria of oysters subjected to hypoxia/reoxygenation stress. Our findings suggest that Cd exposure and acute temperature stress may lead to the loss of mitochondrial resistance to hypoxia and reoxygenation and thus potentially affect the ability of oysters to survive periodic oxygen deprivation in coastal and estuarine habitats.

Lovastatin Production by Aspergillus terreus Using Agro-Biomass as Substrate in Solid State Fermentation

PubMed Central

Faseleh Jahromi, Mohammad; Liang, Juan Boo; Ho, Yin Wan; Mohamad, Rosfarizan; Goh, Yong Meng; Shokryazdan, Parisa

2012-01-01

Ability of two strains of Aspergillus terreus (ATCC 74135 and ATCC 20542) for production of lovastatin in solid state fermentation (SSF) using rice straw (RS) and oil palm frond (OPF) was investigated. Results showed that RS is a better substrate for production of lovastatin in SSF. Maximum production of lovastatin has been obtained using A. terreus ATCC 74135 and RS as substrate without additional nitrogen source (157.07 mg/kg dry matter (DM)). Although additional nitrogen source has no benefit effect on enhancing the lovastatin production using RS substrate, it improved the lovastatin production using OPF with maximum production of 70.17 and 63.76 mg/kg DM for A. terreus ATCC 20542 and A. terreus ATCC 74135, respectively (soybean meal as nitrogen source). Incubation temperature, moisture content, and particle size had shown significant effect on lovastatin production (P < 0.01) and inoculums size and pH had no significant effect on lovastatin production (P > 0.05). Results also have shown that pH 6, 25°C incubation temperature, 1.4 to 2 mm particle size, 50% initial moisture content, and 8 days fermentation time are the best conditions for lovastatin production in SSF. Maximum production of lovastatin using optimized condition was 175.85 and 260.85 mg/kg DM for A. terreus ATCC 20542 and ATCC 74135, respectively, using RS as substrate. PMID:23118499

Pressure-Sensitive Paint: Effect of Substrate

PubMed Central

Quinn, Mark Kenneth; Yang, Leichao; Kontis, Konstantinos

2011-01-01

There are numerous ways in which pressure-sensitive paint can be applied to a surface. The choice of substrate and application method can greatly affect the results obtained. The current study examines the different methods of applying pressure-sensitive paint to a surface. One polymer-based and two porous substrates (anodized aluminum and thin-layer chromatography plates) are investigated and compared for luminescent output, pressure sensitivity, temperature sensitivity and photodegradation. Two luminophores [tris-Bathophenanthroline Ruthenium(II) Perchlorate and Platinum-tetrakis (pentafluorophenyl) Porphyrin] will also be compared in all three of the substrates. The results show the applicability of the different substrates and luminophores to different testing environments. PMID:22247685

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Preparation of rutile TiO(2) coating by thermal chemical vapor deposition for anticoking applications.

PubMed

Tang, Shiyun; Wang, Jianli; Zhu, Quan; Chen, Yaoqiang; Li, Xiangyuan

2014-10-08

To inhibit the metal catalytic coking and improve the oxidation resistance of TiN coating, rutile TiO2 coating has been directly designed as an efficient anticoking coating for n-hexane pyrolysis. TiO2 coatings were prepared on the inner surface of SS304 tubes by a thermal CVD method under varied temperatures from 650 to 900 °C. The rutile TiO2 coating was obtained by annealing the as-deposited TiO2 coating, which is an alternative route for the deposition of rutile TiO2 coating. The morphology, elemental and phase composition of TiO2 coatings were characterized by SEM, EDX and XRD, respectively. The results show that deposition temperature of TiO2 coatings has a strong effect on the morphology and thickness of as-deposited TiO2 coatings. Fe, Cr and Ni at.% of the substrate gradually changes to 0 when the temperature is increased to 800 °C. The thickness of TiO2 coating is more than 6 μm and uniform by metalloscopy, and the films have a nonstoichiometric composition of Ti3O8 when the deposition temperature is above 800 °C. The anticoking tests show that the TiO2 coating at a deposition temperature of 800 °C is sufficiently thick to cover the cracks and gaps on the surface of blank substrate and cut off the catalytic coke growth effect of the metal substrate. The anticoking ratio of TiO2 coating corresponding to each 5 cm segments is above 65% and the average anticoking ratio of TiO2 coating is up to 76%. Thus, the TiO2 coating can provide a very good protective layer to prevent the substrate from severe coking efficiently.

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

NASA Astrophysics Data System (ADS)

Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, R. J.

2000-09-01

This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ˜200 °C. The C 49-C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

PubMed

Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature

PubMed Central

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications. PMID:25520589

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate withoutmore » treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.« less

Method for single crystal growth of photovoltaic perovskite material and devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jinsong; Dong, Qingfeng

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Structure and magnetic properties of Co2FeSi film deposited on Si/SiO2 substrate with Cr buffer layer

NASA Astrophysics Data System (ADS)

Chatterjee, Payel; Basumatary, Himalay; Raja, M. Manivel

2018-05-01

Co2FeSi thin films of 25 nm thickness with 50 nm thick Cr buffer layer was deposited on thermally oxidized Si substrates. Structural and magnetic properties of the films were studied as a function of annealing temperature and substrate temperatures. While the coercivity increases with increase in annealing temperature, it is found to decrease with increase in substrate temperature. A minimum coercivity of 18 Oe has been obtained for the film deposited at 550°C substrate temperature. This was attributed to the formation of L12 phase as observed from the GIXRD studies. The films with a good combination of soft magnetic properties and L21 crystal structure are suitable for spintronic applications.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Characteristics of Coplanar Waveguide on Sapphire for High Temperature Applications (25 to 400 degrees C)

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian; Stalker, Amy R.

2007-01-01

This paper presents the characteristics of coplanar waveguide transmission lines fabricated on R-plane sapphire substrates as a function of temperature across the temperature range of 25 to 400 C. Effective permittivity and attenuation are measured on a high temperature probe station. Two techniques are used to obtain the transmission line characteristics, a Thru-Reflect-Line calibration technique that yields the propagation coefficient and resonant stubs. To a first order fit of the data, the effective permittivity and the attenuation increase linearly with temperature.

Photoreflectance from GaAs and GaAs/GaAs interfaces

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Wilson, Jerome J.; Mitchel, W. C.; Yen, M. Y.

1989-10-01

Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K. At intermediate temperatures the band-edge signal from thin GaAs epilayers contains a contribution from the epilayer-substrate interface. The interface effect depends on the epilayer's thickness, doping, and carrier mobility. The effect broadens the band-edge photoreflectance by 5-10 meV, and artifically lowers the estimates for the critical-point energy, ECP, obtained through the customary third-derivative functional fit to the data.

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

NASA Technical Reports Server (NTRS)

Nahra, J. J.; Bhasin, K. B.; Toncich, S. S.; Subramanyam, G.; Kapoor, V. J.

1992-01-01

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Nanoparticle Selective Laser Processing for a Flexible Display Fabrication

NASA Astrophysics Data System (ADS)

Seung Hwan Ko,; Heng Pan,; Daeho Lee,; Costas P. Grigoropoulos,; Hee K. Park,

2010-05-01

To demonstrate a first step for a novel fabrication method of a flexible display, nanomaterial based laser processing schemes to demonstrate organic light emitting diode (OLED) pixel transfer and organic field effect transistor (OFET) fabrication on a polymer substrate without using any conventional vacuum or photolithography processes were developed. The unique properties of nanomaterials allow laser induced forward transfer of organic light emitting material at low laser energy while maintaining good fluorescence and also allow high resolution transistor electrode patterning at plastic compatible low temperature. These novel processes enable an environmentally friendly and cost effective process as well as a low temperature manufacturing sequence to realize inexpensive, large area, flexible electronics on polymer substrates.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

On the use of copper-based substrates for YBCO coated conductors

NASA Astrophysics Data System (ADS)

Vannozzi, A.; Fabbri, F.; Augieri, A.; Angrisani Armenio, A.; Galluzzi, V.; Mancini, A.; Rizzo, F.; Rufoloni, A.; Padilla, J. A.; Xuriguera, E.; De Felicis, D.; Bemporad, E.; Celentano, G.

2014-05-01

It is well known that the recrystallization texture of heavily cold-rolled pure copper is almost completely cubic. However, one of the main drawbacks concerning the use of pure copper cube-textured substrates for YBCO coated conductor is the reduced secondary recrystallization temperature. The onset of secondary recrystallization (i.e., the occurrence of abnormal grains with unpredictable orientation) in pure copper substrate was observed within the typical temperature range required for buffer layer and YBCO processing (600-850 °C). To avoid the formation of abnormal grains the effect of both grain size adjustment (GSA) and recrystallization annealing was analyzed. The combined use of a small initial grain size and a recrystallization two-step annealing (TSA) drastically reduced the presence of abnormal grains in pure copper tapes. Another way to overcome the limitation imposed by the formation of abnormal grains is to deposit a buffer layer at temperatures where secondary recrystallization does not occur. For example, La2Zr2O7 (LZO) film with a high degree of epitaxy was grown by metal-organic decomposition (MOD) at 1000 °C on pure copper substrate. In several samples the substrate underwent secondary recrystallization. Our experiments indicate that the motion of grain boundaries occurring during secondary recrystallization process does not affect the quality of LZO film.

Complex coupled metabolic and prokaryotic community responses to increasing temperatures in anaerobic marine sediments: critical temperatures and substrate changes

PubMed Central

Roussel, Erwan G.; Cragg, Barry A.; Webster, Gordon; Sass, Henrik; Tang, Xiaohong; Williams, Angharad S.; Gorra, Roberta; Weightman, Andrew J.; Parkes, R. John

2015-01-01

The impact of temperature (0–80°C) on anaerobic biogeochemical processes and prokaryotic communities in marine sediments (tidal flat) was investigated in slurries for up to 100 days. Temperature had a non-linear effect on biogeochemistry and prokaryotes with rapid changes over small temperature intervals. Some activities (e.g. methanogenesis) had multiple ‘windows’ within a large temperature range (∼10 to 80°C). Others, including acetate oxidation, had maximum activities within a temperature zone, which varied with electron acceptor [metal oxide (up to ∼34°C) and sulphate (up to ∼50°C)]. Substrates for sulphate reduction changed from predominantly acetate below, and H2 above, a 43°C critical temperature, along with changes in activation energies and types of sulphate-reducing Bacteria. Above ∼43°C, methylamine metabolism ceased with changes in methanogen types and increased acetate concentrations (>1 mM). Abundances of uncultured Archaea, characteristic of deep marine sediments (e.g. MBGD Euryarchaeota, ‘Bathyarchaeota’) changed, indicating their possible metabolic activity and temperature range. Bacterial cell numbers were consistently higher than archaeal cells and both decreased above ∼15°C. Substrate addition stimulated activities, widened some activity temperature ranges (methanogenesis) and increased bacterial (×10) more than archaeal cell numbers. Hence, additional organic matter input from climate-related eutrophication may amplify the impact of temperature increases on sedimentary biogeochemistry. PMID:26207045

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

1998-02-03

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Guiding Empirical and Theoretical Explorations of Organic Matter Decay By Synthesizing Temperature Responses of Enzyme Kinetics, Microbes, and Isotope Fluxes

NASA Astrophysics Data System (ADS)

Billings, S. A.; Ballantyne, F.; Lehmeier, C.; Min, K.

2014-12-01

Soil organic matter (SOM) transformation rates generally increase with temperature, but whether this is realized depends on soil-specific features. To develop predictive models applicable to all soils, we must understand two key, ubiquitous features of SOM transformation: the temperature sensitivity of myriad enzyme-substrate combinations and temperature responses of microbial physiology and metabolism, in isolation from soil-specific conditions. Predicting temperature responses of production of CO2 vs. biomass is also difficult due to soil-specific features: we cannot know the identity of active microbes nor the substrates they employ. We highlight how recent empirical advances describing SOM decay can help develop theoretical tools relevant across diverse spatial and temporal scales. At a molecular level, temperature effects on purified enzyme kinetics reveal distinct temperature sensitivities of decay of diverse SOM substrates. Such data help quantify the influence of microbial adaptations and edaphic conditions on decay, have permitted computation of the relative availability of carbon (C) and nitrogen (N) liberated upon decay, and can be used with recent theoretical advances to predict changes in mass specific respiration rates as microbes maintain biomass C:N with changing temperature. Enhancing system complexity, we can subject microbes to temperature changes while controlling growth rate and without altering substrate availability or identity of the active population, permitting calculation of variables typically inferred in soils: microbial C use efficiency (CUE) and isotopic discrimination during C transformations. Quantified declines in CUE with rising temperature are critical for constraining model CUE estimates, and known changes in δ13C of respired CO2 with temperature is useful for interpreting δ13C-CO2 at diverse scales. We suggest empirical studies important for advancing knowledge of how microbes respond to temperature, and ideas for theoretical work to enhance the relevance of such work to the world's soils.

XPS study of graphene oxide reduction induced by (100) and (111)-oriented Si substrates

NASA Astrophysics Data System (ADS)

Priante, F.; Salim, M.; Ottaviano, L.; Perrozzi, F.

2018-02-01

The reduction of graphene oxide (GO) has been extensively studied in literature in order to let GO partially recover the properties of graphene. Most of the techniques proposed to reduce GO are based on high temperature annealing or chemical reduction. A new procedure, based on the direct reduction of GO by etched Si substrate, was recently proposed in literature. In the present work, we accurately investigated the Si-GO interaction with x-ray photoelectron spectroscopy. In order to avoid external substrate oxidation factors we used EtOH as the GO solvent instead of water, and thermal annealing was carried out in UHV. We investigated the effect of Si(100), Si(111) and Au substrates on GO, to probe the role played by both the substrate composition and substrate orientation during the reduction process. A similar degree of GO reduction was observed for all samples but only after thermal annealing, ruling out the direct reduction effect of the substrate.

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

NASA Astrophysics Data System (ADS)

Pezzoli, Fabio; Giorgioni, Anna; Gallacher, Kevin; Isa, Fabio; Biagioni, Paolo; Millar, Ross W.; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Isella, Giovanni; Paul, Douglas J.; Miglio, Leo

2016-06-01

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

2011-09-01

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Harnessing Thermoresponsive Aptamers and Gels To Trap and Release Nanoparticles

NASA Astrophysics Data System (ADS)

Liu, Ya; Kuksenok, Olga; He, Ximin; Aizenberg, Michael; Aizenberg, Joanna; Balazs, Anna

We use computational modeling to design a device that can controllably trap and release particles in solution in response to variations in temperature. The system exploits the thermoresponsive properties of end-grafted fibers and the underlying gel substrate. The fibers mimic the temperature-dependent behavior of biological aptamers, which form a hairpin structure at low temperatures (T) and unfold at higher T, consequently losing their binding affinity. The gel substrate exhibits a lower critical solution temperature and thus, expands at low tempertures and contracts at higher T. By developing a new dissipative particle dynamics simulation, we examine the behavior of this hybrid system in a flowing fluid that contains buoyant nanoparticles. Our findings provide guidelines for creating fluidic devices that are effective at purifying contaminated solutions or trapping cells for biological assays.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

PubMed

Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

2012-07-11

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

The effect of substrate, ADP and uncoupler on the respiration of tomato pollen during incubation in vitro at moderately high temperature.

PubMed

Karapanos, I C; Akoumianakis, K A; Olympios, C M; Passam, H C

2009-09-01

Pollen of tomato cv. Supermarmande was collected from greenhouse-grown plants at various intervals throughout the year and arbitrarily classified as of high, medium or low respiratory activity on the basis of CO(2) production during 8 h incubation in vitro at 30 degrees C, a temperature that is considered to be moderately high for tomato fruit set. After an initial burst of respiration during the first stage of hydration at 30 degrees C (>1 h), the respiration rate of pollen of all three categories declined, the decrease being greater in the lots with a low or medium respiratory activity than in the high category. During hydration (10 min after the start of incubation), the addition of succinate or reduced beta-nicotinamide adenine dinucleotide (NADH) to the substrate increased the respiratory rate of slowly-respiring pollen more than that of fast-respiring pollen, but carbonyl cyanide 3-chlorophenylhydrazone (CCCP) and adenosine 5'-diphosphate (ADP) had less effect. After 1-4 h incubation, the respiration rate of the slow- or medium-respiring pollen lots had decreased, but was stimulated by succinate or NADH, and to a lesser degree by ADP. By 7 h, the respiration rate of all pollen lots had declined and was stimulated less by substrate, ADP or CCCP. The oxidation of NADH by tomato pollen contrasts with the failure of other pollen species to utilize this substrate; moreover, a synergistic effect of NADH and succinate was consistently observed. We conclude that the decline in respiration during incubation for up to 4 h at 30 degrees C may reflect a lack of respiratory substrate. After 7 h, however, the decreased response to substrate indicates a loss of mitochondrial integrity or an accumulation of metabolic inhibitors. It is concluded that at 30 degrees C (a moderately high temperature for tomato pollen), the initially high rate of respiration leads to exhaustion of the endogenous respiratory substrates (particularly in pollen with low to medium respiratory activity), but subsequently to ageing and a loss of mitochondrial activity.

Clamping effect on the piezoelectric responses of screen-printed low temperature PZT/Polymer films on flexible substrates

NASA Astrophysics Data System (ADS)

Almusallam, A.; Yang, K.; Zhu, D.; Torah, R. N.; Komolafe, A.; Tudor, J.; Beeby, S. P.

2015-11-01

This paper introduces a new flexible lead zirconate titanate (PZT)/polymer composite material that can be screen-printed onto fabrics and flexible substrates, and investigates the clamping effect of these substrates on the characterization of the piezoelectric material. Experimental results showed that the optimum blend of PZT/polymer binder with a weight ratio of 12:1 provides a dielectric constant of 146. The measured value of the piezoelectric coefficient d33 was found to depend on the substrate used. Measured d33clp values of 70, 40, 36 pC N-1 were obtained from the optimum formulation printed on Polyester-cotton with an interface layer, Kapton and alumina substrates, respectively. The variation in the measured d33clp values occurs because of the effect of the mechanical boundary conditions of the substrate. The piezoelectric film is mechanically bonded to the surface of the substrate and this constrains the film in the plane of the substrate (the 1-direction). This constraint means that the perpendicular forces (applied in the 3-direction) used to measure d33 introduce a strain in the 1-direction that produces a charge of the opposite polarity to that induced by the d33 effect. This is due to the negative sign of the d31 coefficient and has the effect of reducing the measured d33 value. Theoretical and experimental investigations confirm a reduction of 13%, 50% and 55% in the estimated freestanding d33fs values (80 pC N-1) on Polyester-cotton, Kapton and alumina substrates, respectively. These results demonstrate the effect of the boundary conditions of the substrate/PZT interface on the piezoelectric response of the PZT/polymer film and in particular the reduced effect of fabric substrates due to their lowered stiffness.

Comparison of [corrected] actin- and glass-supported phospholipid bilayer diffusion coefficients.

PubMed

Sterling, Sarah M; Dawes, Ryan; Allgeyer, Edward S; Ashworth, Sharon L; Neivandt, David J

2015-04-21

The formation of biomimetic lipid membranes has the potential to provide insights into cellular lipid membrane dynamics. The construction of such membranes necessitates not only the utilization of appropriate lipids, but also physiologically relevant substrate/support materials. The substrate materials employed have been shown to have demonstrable effects on the behavior of the overlying lipid membrane, and thus must be studied before use as a model cushion support. To our knowledge, we report the formation and investigation of a novel actin protein-supported lipid membrane. Specifically, inner leaflet lateral mobility of globular actin-supported DMPC (1,2-dimyristoyl-sn-glycero-3-phosphocholine) bilayers, deposited via the Langmuir-Blodgett/Langmuir Schaefer methodology, was investigated by z-scan fluorescence correlation spectroscopy across a temperature range of 20-44°C. The actin substrate was found to decrease the diffusion coefficient when compared to an identical membrane supported on glass. The depression of the diffusion coefficient occurred across all measured temperatures. These results indicated that the actin substrate exerted a direct effect on the fluidity of the lipid membrane and highlighted the fact that the choice of substrate/support is critical in studies of model lipid membranes. Copyright © 2015 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Changes in the temperature sensitivity of SOM decomposition with grassland succession: implications for soil C sequestration.

PubMed

Nianpeng, He; Ruomeng, Wang; Yang, Gao; Jingzhong, Dai; Xuefa, Wen; Guirui, Yu

2013-12-01

Understanding the temperature sensitivity (Q 10) of soil organic matter (SOM) decomposition is important for predicting soil carbon (C) sequestration in terrestrial ecosystems under warming scenarios. Whether Q 10 varies predictably with ecosystem succession and the ways in which the stoichiometry of input SOM influences Q 10 remain largely unknown. We investigate these issues using a grassland succession series from free-grazing to 31-year grazing-exclusion grasslands in Inner Mongolia, and an incubation experiment performed at six temperatures (0, 5, 10, 15, 20, and 25°C) and with four substrates: control (CK), glucose (GLU), mixed grass leaf (GRA), and Medicago falcata leaf (MED). The results showed that basal soil respiration (20°C) and microbial biomass C (MBC) logarithmically decreased with grassland succession. Q 10 decreased logarithmically from 1.43 in free-grazing grasslands to 1.22 in 31-year grazing-exclusion grasslands. Q 10 increased significantly with the addition of substrates, and the Q 10 levels increased with increase in N:C ratios of substrate. Moreover, accumulated C mineralization was controlled by the N:C ratio of newly input SOM and by incubation temperature. Changes in Q 10 with grassland ecosystem succession are controlled by the stoichiometry of newly input SOM, MBC, and SOM quality, and the combined effects of which could partially explain the mechanisms underlying soil C sequestration in the long-term grazing-exclusion grasslands in Inner Mongolia, China. The findings highlight the effect of substrate stoichiometry on Q 10 which requires further study.

Fuzzy logic control of rotating drum bioreactor for improved production of amylase and protease enzymes by Aspergillus oryzae in solid-state fermentation.

PubMed

Sukumprasertsri, Monton; Unrean, Pornkamol; Pimsamarn, Jindarat; Kitsubun, Panit; Tongta, Anan

2013-03-01

In this study, we compared the performance of two control systems, fuzzy logic control (FLC) and conventional control (CC). The control systems were applied for controlling temperature and substrate moisture content in a solidstate fermentation for the biosynthesis of amylase and protease enzymes by Aspergillus oryzae. The fermentation process was achieved in a 200 L rotating drum bioreactor. Three factors affecting temperature and moisture content in the solid-state fermentation were considered. They were inlet air velocity, speed of the rotating drum bioreactor, and spray water addition. The fuzzy logic control system was designed using four input variables: air velocity, substrate temperature, fermentation time, and rotation speed. The temperature was controlled by two variables, inlet air velocity and rotational speed of bioreactor, while the moisture content was controlled by spray water. Experimental results confirmed that the FLC system could effectively control the temperature and moisture content of substrate better than the CC system, resulting in an increased enzyme production by A. oryzae. Thus, the fuzzy logic control is a promising control system that can be applied for enhanced production of enzymes in solidstate fermentation.

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobanov, D. N., E-mail: dima@ipmras.ru; Novikov, A. V.; Yunin, P. A.

2016-11-15

In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La{sub 3}Ga{sub 5}SiO{sub 14} (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the initial stage of deposition on the crystal quality and morphology of the obtained GaN layer is performed. It is demonstrated that the optimal temperature for deposition of the initial GaN layer onto the langasite substrate is about ~520°C. A decrease in the growth temperature to this value allows the suppression of oxygen diffusion frommore » langasite into the growing layer and a decrease in the dislocation density in the main GaN layer upon its subsequent high-temperature deposition (~700°C). Further lowering of the growth temperature of the nucleation layer leads to sharp degradation of the GaN/LGS layer crystal quality. As a result of the performed research, an epitaxial GaN/LGS layer with a dislocation density of ~10{sup 11} cm{sup –2} and low surface roughness (<2 nm) is obtained.« less

Effect of film thickness on soft magnetic behavior of Fe2CoSi Heusler alloy for spin transfer torque device applications

NASA Astrophysics Data System (ADS)

Asvini, V.; Saravanan, G.; Kalaiezhily, R. K.; Raja, M. Manivel; Ravichandran, K.

2018-04-01

Fe2CoSi based Heusler alloy thin films were deposited on Si (111) wafer (substrate) of varying thickness using ultra high vacuum DC magnetron sputtering. The structural behavior was observed and found to be hold the L21 structure. The deposited thin films were characterized magnetic properties using vibrating sample magnetometer; the result shows a very high saturated magnetization (Ms), lowest coercivity (Hc), high curie transition temperature (Tc) and low hysteresis loss. Thin film thickness of 75 nm Fe2CoSi sample maintained at substrate temperature 450°C shows the lowest coercivity (Hc=7 Oe). In general, Fe2CoSi Heusler alloys curie transition temperature is very high, due to strong exchange interaction between the Fe and Co atoms. The substrate temperature was kept constant at 450°C for varying thickness (e.g. 5, 20, 50, 75 and 100 nm) of thin film sample. The 75 nm thickness thin film sample shows well crystallanity and good magnetic properties, further squareness ratio in B-H loop increases with the increase in film thickness.

Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Fedler, F.; Hauenstein, R. J.

1999-10-01

Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1-xN epitaxial materials. HRXRD results for InxGa1-xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x¯ upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x¯ with increasing growth temperature within the narrow range 590-670 °C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss.

Interfacial kinetics in nanosized Au/Ge films: An in situ TEM study

NASA Astrophysics Data System (ADS)

Kryshtal, Aleksandr P.; Minenkov, Alexey A.; Ferreira, Paulo J.

2017-07-01

We investigate the morphology and crystalline structure of Au/Ge films in a wide range of temperatures by in situ TEM heating. Au/Ge films with Au mass thickness of 0.2-0.3 nm and Ge thickness of 5 nm were produced in vacuum by the sequential deposition of components on a carbon substrate at room temperature. It has been shown that particles with an average size of 4 nm, formed by Au film de-wetting, melt on the germanium substrate at temperatures 110-160 °C, which are below the eutectic temperature for the bulk. The effect of crystallization-induced capillary motion of liquid eutectic particles over Ge surface has been found in this work. Formation of metastable fcc phase of Ge has been observed at the liquid-germanium interface and behind the moving particle. Formation of a liquid phase with its subsequent crystallization at the metal-semiconductor interface seems to play a key role in the metal-induced crystallization effect.

Effect of Sequence Blockiness on the Morphologies of Surface-grafted Elastin-like Polypeptides

NASA Astrophysics Data System (ADS)

Albert, Julie; Sintavanon, Kornkanok; Mays, Robin; MacEwan, Sarah; Chilkoti, Ashutosh; Genzer, Jan

2014-03-01

The inter- and intra- molecular interactions among monomeric units of copolymers and polypeptides depend strongly on monomer sequence distribution and dictate the phase behavior of these species both in solution and on surfaces. To study the relationship between sequence and phase behavior, we have designed a series of elastin-like polypeptides (ELPs) with controlled monomer sequences that mimic copolymers with various co-monomer sequence distributions and attached them covalently to silicon substrates from buffer solutions at temperatures below and above the bulk ELPs' lower critical solution temperatures (LCSTs). The dependence of ELP grafting density on solution temperature was examined by ellipsometry and the resultant surface morphologies were examined in air and under water with atomic force microscopy. Depositions performed above the LCST resulted in higher grafting densities and greater surface roughness of ELPs relative to depositions carried out below the LCST. In addition, we are using gradient substrates to examine the effect of ELP grafting density on temperature responsiveness.

Heat-transfer dynamics during cryogen spray cooling of substrate at different initial temperatures.

PubMed

Jia, Wangcun; Aguilar, Guillermo; Wang, Guo-Xiang; Nelson, J Stuart

2004-12-07

Cryogen spray cooling (CSC) is used to minimize the risk of epidermal damage during laser dermatologic therapy. However, the dominant mechanisms of heat transfer during the transient cooling process are incompletely understood. The objective of this study is to elucidate the physics of CSC by measuring the effect of initial substrate temperature (T0) on cooling dynamics. Cryogen was delivered by a straight-tube nozzle onto a skin phantom. A fast-response thermocouple was used to record the phantom temperature changes before, during and after the cryogen spray. Surface heat fluxes (q") and heat-transfer coefficients (h) were computed using an inverse heat conduction algorithm. The maximum surface heat flux (q"max) was observed to increase with T0. The surface temperature corresponding to q"max also increased with T0 but the latter has no significant effect on h. It is concluded that heat transfer between the cryogen spray and skin phantom remains in the nucleate boiling region even if T0 is 80 degrees C.

Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

NASA Astrophysics Data System (ADS)

Ruffino, F.; Torrisi, V.

2017-11-01

Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1985-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1984-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Jet Fuel Thermal Stability Investigations Using Ellipsometry

NASA Technical Reports Server (NTRS)

Nash, Leigh; Vasu, Subith S.; Klettlinger, Jennifer Lindsey

2017-01-01

Jet fuels are typically used for endothermic cooling in practical engines where their thermal stability is very important. In this work the thermal stability of Sasol IPK (a synthetic jet fuel) with varying levels of naphthalene has been studied on stainless steel substrates using spectroscopic ellipsometry in the temperature range 385-400 K. Ellipsometry is an optical technique that measures the changes in a light beam’s polarization and intensity after it reflects off of a thin film to determine the film’s thickness and optical properties. All of the tubes used were rated as thermally unstable by the color standard portion of the Jet Fuel Thermal Oxidation Test, and this was confirmed by the deposit thicknesses observed using ellipsometry. A new amorphous model on a stainless steel substrate was used to model the data and obtain the results. It was observed that, as would be expected, increasing the temperature of the tube increased the overall deposit amount for a constant concentration of naphthalene. The repeatability of these measurements was assessed using multiple trials of the same fuel at 385 K. Lastly, the effect of increasing the naphthalene concentration in the fuel at a constant temperature was found to increase the deposit thickness.In conclusion, ellipsometry was used to investigate the thermal stability of jet fuels on stainless steel substrate. The effects of increasing temperature and addition of naphthalene on stainless steel tubes with Sasol IPK fuel were investigated. It was found, as expected, that increasing temperature lead to an increase in deposit thickness. It wasAmerican Institute of Aeronautics and Astronautics6also found that increasing amounts of naphthalene increased the maximum deposit thickness. The repeatability of these measurements was investigated using multiple tests at the same conditions. The present work provides as a better quantitative tool compared to the widely used JFTOT technique. Future work will expand on the fuel types, temperature, and substrate materials.

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

NASA Astrophysics Data System (ADS)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Mo, Z. K.; Yang, W. J.; Weng, Y.; Fu, Y. C.; He, H.; Shen, X. M.

2017-12-01

Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.

Conditions for extreme sensitivity of protein diffusion in membranes to cell environments

PubMed Central

Tserkovnyak, Yaroslav; Nelson, David R.

2006-01-01

We study protein diffusion in multicomponent lipid membranes close to a rigid substrate separated by a layer of viscous fluid. The large-distance, long-time asymptotics for Brownian motion are calculated by using a nonlinear stochastic Navier–Stokes equation including the effect of friction with the substrate. The advective nonlinearity, neglected in previous treatments, gives only a small correction to the renormalized viscosity and diffusion coefficient at room temperature. We find, however, that in realistic multicomponent lipid mixtures, close to a critical point for phase separation, protein diffusion acquires a strong power-law dependence on temperature and the distance to the substrate H, making it much more sensitive to cell environment, unlike the logarithmic dependence on H and very small thermal correction away from the critical point. PMID:17008402

Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Colniţă, Alia; Marconi, Daniel; Brătfălean, Radu Tiberiu; Turcu, Ioan

2018-04-01

The purpose of this work was to optimize a single-step fabrication process of silicon (Si) cones-like nanostructures on Si(111) reconstructed substrates. The substrate temperature is the most important parameter in the Si/Si growth, due to its high influence over the surface nanostructuring and the occurrence of well defined nanocones. We investigate the effect of different substrate temperatures on the density and size distributions of Si nanocones formed during the molecular beam epitaxy (MBE) deposition of Si/Si(111) 7 × 7 reconstructed surfaces. The nanocones were characterized using scanning tunnelling microscopy (STM) and the height and the bottom area distributions of the Si nanocones were assessed. It was found that the obtained distributions are interrelated suggesting the self-similarity of the nanostructures grown during the deposition protocol.

Investigation of the strain-sensitive superconducting transition of BaFe1.8Co0.2As2 thin films utilizing piezoelectric substrates

NASA Astrophysics Data System (ADS)

Trommler, S.; Hänisch, J.; Iida, K.; Kurth, F.; Schultz, L.; Holzapfel, B.; Hühne, R.

2014-05-01

The preparation of biaxially textured BaFe1.8Co0.2As2 thin films has been optimized on MgO single crystals and transfered to piezoelectric (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. By utilizing the inverse piezoelectric effect the lattice parameter of these substrates can be controlled applying an electric field, leading to a induction of biaxial strain into the superconducting layer. High electric fields were used to achieve a total strain of up to 0.05% at low temperatures. A sharpening of the resistive transition and a shift of about 0.6 K to higher temperatures was found at a compressive strain of 0.035%.

Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez, H.M.; Torres, J., E-mail: njtorress@unal.edu.co; Lopez Carreno, L.D.

2013-01-15

Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO{sub 3} (H{sub 2}O){sub 2} was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into {alpha}-MoO{sub 3}. The optical gap diminishes as the substrate temperaturemore » rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO{sub 3} films' sensitivity was analyzed for CO and H{sub 2}O in the temperature range 160 to 360 K; the results indicate that CO and H{sub 2}O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H{sub 2}O. - Highlights: Black-Right-Pointing-Pointer A low cost technique is used which produces good material. Black-Right-Pointing-Pointer Thin films are prepared using ammonium molybdate tetra hydrated. Black-Right-Pointing-Pointer The control of the physical properties of the samples could be done. Black-Right-Pointing-Pointer A calculation method is proposed to determine the material optical properties. Black-Right-Pointing-Pointer The MoO{sub 3} thin films prepared by spray pyrolysis could be used as gas sensor.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Shweta, E-mail: shwetaverma@rrcat.gov.in; Rao, B. T.; Detty, A. P.

We studied localized surface plasmon resonances (LSPR) at different compositions, substrate temperatures, and mass thicknesses of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition. The LSPRs were pronounced at all compositions of the films grown at high substrate temperature of about 300 °C as compared to those grown at room temperature. The alloy formation and composition of the films were determined using X-ray photoelectron and energy dispersive spectroscopy. Films' mass thickness and compositional uniformity along the thickness were determined using X-ray reflectometry and secondary ion mass spectroscopy. Atomic force microscopic analysis revealed the formation of densely packed nanoparticles ofmore » increasing size with the number of laser ablation pulses. The LSPR wavelength red shifted with increasing either Au percentage or film mass thickness and corresponding LSPR tuning was obtained in the range of 450 to 690 nm. The alloy dielectric functions obtained from three different models were compared and the optical responses of the nanoparticle films were calculated from modified Yamaguchi effective medium theory. The tuning of LSPR was found to be due to combined effect of change in intrinsic and extrinsic parameters mainly the composition, morphology, particle-particle, and particle-substrate interactions.« less

Optimized synthesis of lipase-catalyzed hexyl acetate in n-hexane by response surface methodology.

PubMed

Shieh, C J; Chang, S W

2001-03-01

Hexyl acetate, a short-chain ester with fruity odor, is a significant green note flavor compound and widely used in the food industry. The ability for immobilized lipase from Mucor miehei (Lipozyme IM-77) to catalyze the transesterification of hexanol with triacetin was investigated in this study. Response surface methodology and five-level-five-factor central composite rotatable design were adopted to evaluate the effects of synthesis variables, such as reaction time (2-10 h), temperature (25-65 degrees C), enzyme amount (10-50%; 0.024-0.118 BAUN), substrate molar ratio of triacetin to hexanol (1:1 to 3:1), and added water content (0-20%) on percentage molar conversion of hexyl acetate. The results showed that reaction temperature and substrate molar ratio were the most important parameters and that added water content had less of an effect on percent molar conversion. On the basis of canonical analysis, optimum synthesis conditions were as follows: reaction time, 7.7 h; temperature, 52.6 degrees C; enzyme amount, 37.1% (0.089 BAUN); substrate molar ratio, 2.7:1; and added water, 12.5%. The predicted value was 88.9% molar conversion, and the actual experimental value was 86.6% molar conversion.

Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

NASA Astrophysics Data System (ADS)

Jeong, Jin-A.; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

2010-11-01

We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/squ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

NASA Astrophysics Data System (ADS)

Cecchi, S.; Gatti, E.; Chrastina, D.; Frigerio, J.; Müller Gubler, E.; Paul, D. J.; Guzzi, M.; Isella, G.

2014-03-01

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si1-xGex buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si1-xGex layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

Formation mechanism and mechanics of dip-pen nanolithography using molecular dynamics.

PubMed

Wu, Cheng-Da; Fang, Te-Hua; Lin, Jen-Fin

2010-03-02

Molecular dynamics simulations are used to investigate the mechanisms of molecular transference, pattern formation, and mechanical behavior in the dip-pen nanolithography (DPN) process. The effects of deposition temperature were studied using molecular trajectories, the meniscus characteristic, surface absorbed energy, and pattern formation analysis. At the first transferred stage (at the initial indentation depth), the conformation of SAM molecules lies almost on the substrate surface. The molecules start to stand on the substrate due to the pull and drag forces at the second transferred stage (after the tip is pulled up). According to the absorbed energy behavior, the second transferred stage has larger transferred amounts and the transfer rate is strongly related to temperature. When molecules were deposited at low temperature (e.g., room temperature), the pattern shape was more highly concentrated. The pattern shape at high temperatures expanded and the area increased because of good molecular diffusion.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

NASA Astrophysics Data System (ADS)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Initial substrate moisture content and storage temperature affects chemical properties of bagged substrates containing controlled release fertilizer at two different temperatures

USDA-ARS?s Scientific Manuscript database

Bagged potting mixes can be stored for weeks or months before being used by consumers. Some bagged potting mixes are amended with controlled release fertilizers (CRF). The objective of this research was to observe how initial substrate moisture content and storage temperature affect the chemical p...

Simulation of thermal stress in Er2O3 and Al2O3 tritium penetration barriers by finite-element analysis

NASA Astrophysics Data System (ADS)

Ze, LIU; Guogang, YU; Anping, HE; Ling, WANG

2017-09-01

The physical vapor deposition method is an effective way to deposit Al2O3 and Er2O3 on 316L stainless steel substrates acting as tritium permeation barriers in a fusion reactor. The distribution of residual thermal stress is calculated both in Al2O3 and Er2O3 coating systems with planar and rough substrates using finite element analysis. The parameters influencing the thermal stress in the sputter process are analyzed, such as coating and substrate properties, temperature and Young’s modulus. This work shows that the thermal stress in Al2O3 and Er2O3 coating systems exhibit a linear relationship with substrate thickness, temperature and Young’s modulus. However, this relationship is inversed with coating thickness. In addition, the rough substrate surface can increase the thermal stress in the process of coating deposition. The adhesive strength between the coating and the substrate is evaluated by the shear stress. Due to the higher compressive shear stress, the Al2O3 coating has a better adhesive strength with a 316L stainless steel substrate than the Er2O3 coating. Furthermore, the analysis shows that it is a useful way to improve adhesive strength with increasing interface roughness.

Effect of the glass transition temperature on alpha-amylase activity in a starch matrix.

PubMed

Chaudhary, Vinita; Panyoyai, Naksit; Small, Darryl M; Shanks, Robert A; Kasapis, Stefan

2017-02-10

This study optimises a protocol for the estimation of α-amylase activity in a condensed starch matrix in the vicinity of the glass transition region. Enzymatic activity on the vitrified starch system was compared with that of a reference substrate, maltodextrin. The activity was assayed as the rate of release of reducing sugar using a dinitrosalicylic acid procedure. The condensed carbohydrate matrices served the dual purpose of acting as a substrate as well as producing a pronounced effect on the ability to enzymatic hydrolysis. Activation energies were estimated throughout the glass transition region of condensed carbohydrate preparations based on the concept of the spectroscopic shift factor. Results were used to demonstrate a considerable moderation by the mechanical glass transition temperature, beyond the expected linear effect of the temperature dependence, on the reaction rate of starch hydrolysis by α-amylase in comparison with the low-molecular weight chain of maltodextrin. Copyright © 2016. Published by Elsevier Ltd.

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

NASA Astrophysics Data System (ADS)

O'Brien, April; Villegas, Brendon; Gu, J. Y.

2009-01-01

Magnesium diboride (MgB 2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB 2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature ( Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate ( Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB 2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB 2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB 2 heterostructures using rather simple physical vapor deposition method such as sputtering.

Structural adhesives for missile external protection material

NASA Astrophysics Data System (ADS)

Banta, F. L.; Garzolini, J. A.

1981-07-01

Two basic rubber materials are examined as possible external substrate protection materials (EPM) for missiles. The analysis provided a data base for selection of the optimum adhesives which are compatible with the substrate, loads applied and predicted bondline temperatures. Under the test conditions, EA934/NA was found to be the optimum adhesive to bond VAMAC 2273 and/or NBR/EPDM 9969A to aluminum substrate. The optimum adhesive for composite structures was EA956. Both of these adhesives are two-part epoxy systems with a pot life of approximately two hours. Further research is suggested on field repair criteria, nuclear hardness and survivability effects on bondline, and ageing effects.

ARPES Studies on the substrate effect on monolayer FeSe

NASA Astrophysics Data System (ADS)

Rebec, Slavko; Jia, Tao; Lee, James; Li, Wei; Zhang, Chaofan; Moore, Robert; Shen, Z. X.

For 2D films, interface interactions can play a critical role in determining the prevailing physics of the system. In the case of FeSe on SrTiO3, reducing the FeSe thickness to 1 monolayer (ML) from bulk leads to a significantly increased superconducting transition temperature (Tc). To fully utilize and maximize this approach to increasing Tc in FeSe and potentially apply it to other superconducting materials, the role which the substrate plays in this system must be understood. Here we present recent in-situ angle-resolved photo emission studies of the substrate effect on MBE grown 1 ML FeSe films.

A Statistical Approach for Optimization of Simultaneous Production of β-Glucosidase and Endoglucanase by Rhizopus oryzae from Solid-State Fermentation of Water Hyacinth Using Central Composite Design

PubMed Central

Karmakar, Moumita; Ray, Rina Rani

2011-01-01

The production cost of β-glucosidase and endoglucanase could be reduced by using water hyacinth, an aquatic weed, as the sole carbon source and using cost-efficient fermentation strategies like solid-state fermentation (SSF). In the present study, the effect of different production conditions on the yield of β-glucosidase and endoglucanase by Rhizopus oryzae MTCC 9642 from water hyacinth was investigated systematically using response surface methodology. A Central composite experimental design was applied to optimize the impact of three variables, namely, substrate concentration, pH, and temperature, on enzyme production. The optimal level of each parameter for maximum enzyme production by the fungus was determined. Highest activity of endoglucanase of 495 U/mL was achieved at a substrate concentration of 1.23%, pH 7.29, and temperature 29.93°C whereas maximum β-glucosidase activity of 137.32 U/ml was achieved at a substrate concentration of 1.25%, pH 6.66, and temperature 32.09°C. There was a direct correlation between the levels of enzymatic activities and the substrate concentration of water hyacinth as carbon source. PMID:21687577

Microcontact printing for patterning carbon nanotube/polymer composite films with electrical conductivity.

PubMed

Ogihara, Hitoshi; Kibayashi, Hiro; Saji, Tetsuo

2012-09-26

Patterned carbon nanotube (CNT)/acrylic resin composite films were prepared using microcontact printing (μCP). To prepare ink for μCP, CNTs were dispersed into propylene glycol monomethyl ether acetate (PGMEA) solution in which acrylic resin and a commercially available dispersant (Disperbyk-2001) dissolved. The resulting ink were spin-coated onto poly(dimethylsiloxane) (PDMS) stamps. By drying solvent components from the ink, CNT/polymer composite films were prepared over PDMS stamps. Contact between the stamps and glass substrates provided CNT/polymer composite patternings on the substrates. The transfer behavior of the CNT/polymer composite films depended on the thermal-treatment temperature during μCP; thermal treatment at temperatures near the glass-transition temperature (T(g)) of the acrylic resin was effective to form uniform patternings on substrates. Moreover, contact area between polymer and substrates also affect the transfer behavior. The CNT/polymer composite films showed high electrical conductivity, despite the nonconductivity of polymer components, because CNTs in the films were interconnected. The electrical conductivity of the composite films increased as CNT content in the film became higher; as a result, the composite patternings showed almost as high electrical conductivity as previously reported CNT/polymer bulk composites.

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

2013-06-01

By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

Antibacterial characteristics of thermal plasma spray system.

PubMed

Goudarzi, M; Saviz, Sh; Ghoranneviss, M; Salar Elahi, A

2018-03-15

The objective of this study is to investigate antibacterial characteristics of a thermal plasma spray system. For this purpose, copper powder was coated on a handmade atmospheric plasma spraying system made by the stainless steel 316 substrate, which is preheated at different temperatures before spraying. A number of deposition characteristics such as antibacterial characteristics, adhesion strength and hardness of coating, was investigated. All of the spray parameters are fixed except the substrate temperature. The chemical composition was analyzed by X-ray diffraction (XRD). A scanning electron microscopy (SEM) and back scattering electron microscopy (BSE) were used to show the coating microstructure, its thickness and also the powder micrograph. The energy dispersive X-ray spectroscopy (EDX) was used to analyze the coating particles. Hardness of the deposition was examined by Vickers tester (HV0.1). Its adhesion strength was declared by cross cut tester (TQC). In addition, the percentage of bactericidal coating was evidenced with Staphylococcus aurous and Escherichia coli bacteria. Study results show that as the substrates temperature increases, the number of splats in the shape of pancake increases, the greatness and percentage of the deposition porosity both decrease. The increment of the substrate temperature leads to more oxidation and makes thicker dendrites on the splat. The enhancement of the substrate temperature also enlarges thickness and efficiency of coating. The interesting results are that antibacterial properties of coatings against the Escherichia coli are more than Staphylococcus aurous bacteria. However the bactericidal percentage of the coatings against Staphylococcus aurous and Escherichia coli bacteria roughly does not change with increasing the substrate temperature. Furthermore, by increment of the substrate temperature, coatings with both high adhesion and hardness are obtained. Accordingly, the temperature of substrate can be an important parameter for progressing mechanical properties of the antiseptic deposition.

Deposition of tantalum carbide coatings on graphite by laser interactions

NASA Technical Reports Server (NTRS)

Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

1994-01-01

Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

A comparative study of glycerol and sorbitol as co-substrates in methanol-induced cultures of Pichia pastoris: temperature effect and scale-up simulation.

PubMed

Berrios, Julio; Flores, María-Olga; Díaz-Barrera, Alvaro; Altamirano, Claudia; Martínez, Irene; Cabrera, Zaida

2017-03-01

The production of recombinant proteins by Pichia pastoris under AOX1 promoter is usually performed using methanol together with either glycerol or sorbitol as co-substrate. Although both co-substrates have been widely used, comparative studies are scarce. In addition, these comparisons have been performed at different specific growth rate (µ) that it is well known that has an important effect on productivity. Thus, the effect of using these co-substrates on the production of Rhyzopus oryzae lipase (ROL) by P. pastoris was compared in continuous cultures growing at the same µ at either 22 or 30 °C. Results show that using glycerol as co-substrate led to higher volumetric productivities, and lower specific and volumetric methanol consumption rates. Scale-up simulation with 10-10,000 L bioreactor sizes indicated that glycerol produced the highest volumetric productivity of ROL with lower aeration requirements. Therefore, glycerol rises as a better option than sorbitol in ROL production.

SEMICONDUCTOR MATERIALS: White light photoluminescence from ZnS films on porous Si substrates

NASA Astrophysics Data System (ADS)

Caifeng, Wang; Qingshan, Li; Bo, Hu; Weibing, Li

2010-03-01

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.

Formation of SIMOX-SOI structure by high-temperature oxygen implantation

NASA Astrophysics Data System (ADS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-12-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 1017-1018 ions/cm2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

Competitive photocyclization/rearrangement of 4-aryl-1,1-dicyanobutenes controlled by intramolecular charge-transfer interaction. Effect of medium polarity, temperature, pressure, excitation wavelength, and confinement.

PubMed

Ito, Tadashi; Nishiuchi, Emi; Fukuhara, Gaku; Inoue, Yoshihisa; Mori, Tadashi

2011-09-01

A series of 4-aryl-1,1-dicyanobutenes (1a-1f) with different substituents were synthesized to control the intramolecular donor-acceptor or charge-transfer (C-T) interactions in the ground state. Photoexcitation of these C-T substrates led to competitive cyclization and rearrangement, the ratio being critically controlled by various environmental factors, such as solvent polarity, temperature and static pressure, and also by excitation wavelength and supramolecular confinement (polyethylene voids). In non-polar solvents, the rearrangement was dominant (>10 : 1) for all examined substrates, while the cyclization was favoured in polar solvents, in particular at low temperatures. Selective excitation at the C-T band further enhanced the cyclization up to >50 : 1 ratios. More importantly, the cyclization/rearrangement ratio was revealed to be a linear function of the C-T transition energy. However, the substrates with a sterically demanding or highly electron-donating substituent failed to give the cyclization product.

Effect of substrate preheating on the photovoltaic performance of ZnO nanorod-based perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Wei-Shuo; Lin, Tsyr-Rou; Yang, Hsiu-Ting; Li, Yu-Ren; Chuang, Kai-Chi; Li, Yi-Shao; Luo, Jun-Dao; Hus, Chain-Shu; Cheng, Huang-Chung

2018-06-01

In this study, zinc oxide nanorods (ZnO-NRs) grown via a low-temperature hydrothermal growth process are used as the electron transport layer (ETL) owing to their low temperature process and three-dimensional structure, which increases the surface area and thereby improves photovoltaic performance. To further improve the performance of solar cells, substrate preheating before spin-coating PbI2 and perovskite films was conducted. With the increase in preheating temperature, the grain size, surface uniformity, and crystallinity of perovskite increased. Consequently, the photovoltaic performances of the devices with 150-nm-long ZnO-NRs and substrate preheating at 150 °C showed an optimum open-circuit voltage (V oc) of 0.84 V, a short-circuit current (J sc) of 21.43 mA/cm2, a fill factor (FF) of 57.42%, and a power conversion efficiency (PCE) of 10.34% owing to the superior quality of the perovskite films having smooth surfaces with fewer pinholes.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Effects of thermal inhomogeneity on 4m class mirror substrates

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Kunisch, Clemens; Westerhoff, Thomas

2016-07-01

The new ground based telescope generation is moving to a next stage of performance and resolution. Mirror substrate material properties tolerance and homogeneity are getting into focus. The coefficient of thermal expansion (CTE) homogeneity is even more important than the absolute CTE. The error in shape of a mirror, even one of ZERODUR, is affected by changes in temperature, and by gradients in temperature. Front to back gradients will change the radius of curvature R that in turn will change the focus. Some systems rely on passive athermalization and do not have means to focus. Similarly changes in soak temperature will result in surface changes to the extent there is a non-zero coefficient of thermal expansion. When there are in-homogeneities in CTE, the mirror will react accordingly. Results of numerical experiments are presented discussing the impact of CTE in-homogeneities on the optical performance of 4 m class mirror substrates. Latest improvements in 4 m class ZERODUR CTE homogeneity and the thermal expansion metrology are presented as well.

Microstructural studies by TEM of diamond films grown by combustion flame

NASA Astrophysics Data System (ADS)

Ma, G.-H. M.; Hirose, Y.; Amanuma, S.; McClure, M.; Prater, J. T.; Glass, J. T.

Microstructures of diamond films grown in an oxygen-acetylene combustion flame were studied by TEM. The O2/C2H2 gas ratio was fixed and the substrate materials and temperature were varied. High quality diamond films were grown by this method at high growth rates of about 30 micron/hr. A rough surface and high density of secondary nucleation sites and microtwins were observed in the diamond grains grown on molybdenum (Mo) at a substrate temperature of 500 C. When the substrate temperature wass raised to between 500 and 870 C, the defect density was greatly reduced, revealing a low density of stacking faults and dislocations. Diamond films grown on Si substrates did not show the same substrate temperature dependence on defect density, at least not over the same temperature range. However, the same correlation between defect density, secondary nucleation, and surface morphology was observed.

Temperature limits trail following behaviour through pheromone decay in ants

NASA Astrophysics Data System (ADS)

van Oudenhove, Louise; Billoir, Elise; Boulay, Raphaël; Bernstein, Carlos; Cerdá, Xim

2011-12-01

In Mediterranean habitats, temperature affects both ant foraging behaviour and community structure. Many studies have shown that dominant species often forage at lower temperature than subordinates. Yet, the factors that constrain dominant species foraging activity in hot environments are still elusive. We used the dominant ant Tapinoma nigerrimum as a model species to test the hypothesis that high temperatures hinder trail following behaviour by accelerating pheromone degradation. First, field observations showed that high temperatures (> 30°C) reduce the foraging activity of T. nigerrimum independently of the daily and seasonal rhythms of this species. Second, we isolated the effect of high temperatures on pheromone trail efficacy from its effect on worker physiology. A marked substrate was heated during 10 min (five temperature treatments from 25°C to 60°C), cooled down to 25°C, and offered in a test choice to workers. At hot temperature treatments (>40°C), workers did not discriminate the previously marked substrate. High temperatures appeared therefore to accelerate pheromone degradation. Third, we assessed the pheromone decay dynamics by a mechanistic model fitted with Bayesian inference. The model predicted ant choice through the evolution of pheromone concentration on trails as a function of both temperature and time since pheromone deposition. Overall, our results highlighted that the effect of high temperatures on recruitment intensity was partly due to pheromone evaporation. In the Mediterranean ant communities, this might affect dominant species relying on chemical recruitment, more than subordinate ant species, less dependent on chemical communication and less sensitive to high temperatures.

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

NASA Astrophysics Data System (ADS)

Rosli, Z. M.; Kwan, W. L.; Juoi, J. M.

2016-07-01

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (RN), and substrate temperature (TS). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % RN. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB2 phase within the coatings. The TS, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

Lower-Conductivity Ceramic Materials for Thermal-Barrier Coatings

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Zhu, Dongming

2006-01-01

Doped pyrochlore oxides of a type described below are under consideration as alternative materials for high-temperature thermal-barrier coatings (TBCs). In comparison with partially-yttria-stabilized zirconia (YSZ), which is the state-of-the-art TBC material now in commercial use, these doped pyrochlore oxides exhibit lower thermal conductivities, which could be exploited to obtain the following advantages: For a given difference in temperature between an outer coating surface and the coating/substrate interface, the coating could be thinner. Reductions in coating thicknesses could translate to reductions in weight of hot-section components of turbine engines (e.g., combustor liners, blades, and vanes) to which TBCs are typically applied. For a given coating thickness, the difference in temperature between the outer coating surface and the coating/substrate interface could be greater. For turbine engines, this could translate to higher operating temperatures, with consequent increases in efficiency and reductions in polluting emissions. TBCs are needed because the temperatures in some turbine-engine hot sections exceed the maximum temperatures that the substrate materials (superalloys, Si-based ceramics, and others) can withstand. YSZ TBCs are applied to engine components as thin layers by plasma spraying or electron-beam physical vapor deposition. During operation at higher temperatures, YSZ layers undergo sintering, which increases their thermal conductivities and thereby renders them less effective as TBCs. Moreover, the sintered YSZ TBCs are less tolerant of stress and strain and, hence, are less durable.

Development and Evaluation of High Temperature Gaskets for Hypersonic and Reentry Applications

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay; Shpargel, Tarah

2007-01-01

A wide variety of flexible gasket compositions were developed and tested at high temperatures. The gasket material system has high temperature capability. GRABER sealants were very effective in sealing machined ACC-4 composite surfaces. The gasket composition do not bond strongly with the ACC-4 substrate materials. The density of gasket materials can be tailored to show appropriate compressibility.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

NASA Astrophysics Data System (ADS)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Raship, N. A.; Sahdan, M. Z.; Adriyanto, F.; Nurfazliana, M. F.; Bakri, A. S.

2017-01-01

Copper oxide films were grown on silicon substrates by sol-gel dip coating method. In order to study the effects of annealing temperature on the properties of copper oxide films, the temperature was varied from 200 °C to 450 °C. In the process of dip coating, the substrate is withdrawn from the precursor solution with uniform velocity to obtain a uniform coating before undergoing an annealing process to make the copper oxide film polycrystalline. The physical properties of the copper oxide films were measured by an X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscopy (AFM) and a four point probe instrument. From the XRD results, we found that pure cuprite (Cu2O) phase can be obtained by annealing the films annealed at 200 °C. Films annealed at 300 °C had a combination phase which consists of tenorite (CuO) and cuprite (Cu2O) phase while pure tenorite (CuO) phase can be obtained at 450 °C annealing temperature. The surface microstructure showed that the grains size is increased whereas the surface roughness is increased and then decreases by increasing in annealing temperature. The films showed that the resistivity decreased with increasing annealing temperature. Consequently, it was observed that annealing temperature has strong effects on the structural, morphological and electrical properties of copper oxide films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aadila, A., E-mail: aadilaazizali@gmail.com; Afaah, A. N.; Asib, N. A. M.

Poly(methyl methacrylate) (PMMA) films were deposited on glass substrate by sol-gel spin-coating method. The films were annealed for 10 minutes in furnace at different annealing temperature of room temperature, 50, 100, 150 and 200 °C. The effect of annealing temperatures to the surface and optical properties of PMMA films spin-coated on the substrate were investigated by Atomic Force Microscope (AFM) and Ultraviolet-Visible (UV-Vis) Spectroscopy. It was observed in AFM analysis all the annealed films show excellent smooth surface with zero roughness. All the samples demonstrate a high transmittance of 80% in UV region as shown in UV-Vis measurement. Highly transparentmore » films indicate the films are good optical properties and could be applied in various optical applications and also in non-linear optics.« less

Plates for vacuum thermal fusion

DOEpatents

Davidson, James C.; Balch, Joseph W.

2002-01-01

A process for effectively bonding arbitrary size or shape substrates. The process incorporates vacuum pull down techniques to ensure uniform surface contact during the bonding process. The essence of the process for bonding substrates, such as glass, plastic, or alloys, etc., which have a moderate melting point with a gradual softening point curve, involves the application of an active vacuum source to evacuate interstices between the substrates while at the same time providing a positive force to hold the parts to be bonded in contact. This enables increasing the temperature of the bonding process to ensure that the softening point has been reached and small void areas are filled and come in contact with the opposing substrate. The process is most effective where at least one of the two plates or substrates contain channels or grooves that can be used to apply vacuum between the plates or substrates during the thermal bonding cycle. Also, it is beneficial to provide a vacuum groove or channel near the perimeter of the plates or substrates to ensure bonding of the perimeter of the plates or substrates and reduce the unbonded regions inside the interior region of the plates or substrates.

Vacuum pull down method for an enhanced bonding process

DOEpatents

Davidson, James C.; Balch, Joseph W.

1999-01-01

A process for effectively bonding arbitrary size or shape substrates. The process incorporates vacuum pull down techniques to ensure uniform surface contact during the bonding process. The essence of the process for bonding substrates, such as glass, plastic, or alloys, etc., which have a moderate melting point with a gradual softening point curve, involves the application of an active vacuum source to evacuate interstices between the substrates while at the same time providing a positive force to hold the parts to be bonded in contact. This enables increasing the temperature of the bonding process to ensure that the softening point has been reached and small void areas are filled and come in contact with the opposing substrate. The process is most effective where at least one of the two plates or substrates contain channels or grooves that can be used to apply vacuum between the plates or substrates during the thermal bonding cycle. Also, it is beneficial to provide a vacuum groove or channel near the perimeter of the plates or substrates to ensure bonding of the perimeter of the plates or substrates and reduce the unbonded regions inside the interior region of the plates or substrates.

Enzymatic mechanisms of soil-carbon response to temperature on Mt. Kilimanjaro

NASA Astrophysics Data System (ADS)

Blagodatskaya, Evgenia; Blagodatskiy, Sergey; Kuzyakov, Yakov

2016-04-01

Short-term acceleration of soil organic matter (SOM) decomposition by increasing temperature contradicts the acclimation observed in long-term studies. We used the unique altitudinal gradient (from colline tropical zone to subalpine zone) on Mt. Kilimanjaro to demonstrate the mechanisms of short- and long-term acclimation of extra- and intracellular enzymes that decompose polymers (cellulose, chitin, phytate) and oxidize monomers (14C-glucose). Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation

Next Generation Non-Vacuum, Maskless, Low Temperature Nanoparticle Ink Laser Digital Direct Metal Patterning for a Large Area Flexible Electronics

PubMed Central

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P.; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition– and photolithography-based conventional metal patterning processes. The “digital” nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays. PMID:22900011

Next generation non-vacuum, maskless, low temperature nanoparticle ink laser digital direct metal patterning for a large area flexible electronics.

PubMed

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition- and photolithography-based conventional metal patterning processes. The "digital" nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays.

PHYSIOLOGICAL STUDIES ON 'CANCER IRRORATUS' LARVAE. II. EFFECTS OF TEMPERATURE AND SALINITY ON PHYSIOLOGICAL PERFORMANCE

EPA Science Inventory

Larvae of the rock crab Cancer irroratus were cultured under specific environmental regimes to examine the influence of temperature and salinity on respiration and excretion rates during development. In addition, the type of biochemical substrate used for energy production was de...

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

1994-01-01

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

1994-09-13

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

Aqueous solution epitaxy of CdS layers on CuInSe 2

NASA Astrophysics Data System (ADS)

Furlong, M. J.; Froment, M.; Bernard, M. C.; Cortès, R.; Tiwari, A. N.; Krejci, M.; Zogg, H.; Lincot, D.

1998-09-01

Epitaxial CdS thin films have been deposited from an aqueous ammonia solution containing cadmium ions and thiourea as precursors on single crystalline CuInSe 2 films prepared by MBE on Si(1 1 1) and GaAs(1 0 0) substrates. The structure and quality of the films were investigated by RHEED, glancing angle XRD and HRTEM in cross-section. The films are cubic on (1 0 0) substrates, and mixed cubic and hexagonal on (1 1 1) substrates due to the presence of stacking faults parallel to the substrate. The growth is under surface kinetic control with an activation energy of 85 kJ mol -1. Epitaxy improves with increasing temperature and an epitaxial transition temperature at approx. 60°C is demonstrated in the selected experimental conditions. The epitaxy is very sensitive to the preparation of the surface. Beneficial effects of in situ or ex situ chemical etching are found. Similarities between aqueous solution and vapor-phase chemical depositions are pointed out.

Method and apparatus for forming high-critical-temperature superconducting layers on flat and/or elongated substrates

DOEpatents

Ciszek, Theodore F.

1994-01-01

An elongated, flexible superconductive wire or strip is fabricated by pulling it through and out of a melt of metal oxide material at a rate conducive to forming a crystalline coating of superconductive metal oxide material on an elongated, flexible substrate wire or strip. A coating of crystalline superconductive material, such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, is annealed to effect conductive contact between adjacent crystalline structures in the coating material, which is then cooled to room temperature. The container for the melt can accommodate continuous passage of the substrate through the melt. Also, a second pass-through container can be used to simultaneously anneal and overcoat the superconductive coating with a hot metallic material, such as silver or silver alloy. A hollow, elongated tube casting method of forming an elongated, flexible superconductive wire includes drawing the melt by differential pressure into a heated tubular substrate.

Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

NASA Astrophysics Data System (ADS)

Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

2018-04-01

Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

Method and apparatus for forming high-critical-temperature superconducting layers on flat and/or elongated substrates

DOEpatents

Ciszek, T.F.

1994-04-19

An elongated, flexible superconductive wire or strip is fabricated by pulling it through and out of a melt of metal oxide material at a rate conducive to forming a crystalline coating of superconductive metal oxide material on an elongated, flexible substrate wire or strip. A coating of crystalline superconductive material, such as Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8], is annealed to effect conductive contact between adjacent crystalline structures in the coating material, which is then cooled to room temperature. The container for the melt can accommodate continuous passage of the substrate through the melt. Also, a second pass-through container can be used to simultaneously anneal and overcoat the superconductive coating with a hot metallic material, such as silver or silver alloy. A hollow, elongated tube casting method of forming an elongated, flexible superconductive wire includes drawing the melt by differential pressure into a heated tubular substrate. 8 figures.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.

2014-05-19

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combinationmore » of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.« less

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Effects of Temperature and Humidity on the Characterization of C-4 Explosive Threats

NASA Astrophysics Data System (ADS)

Miller, C. J.; Yoder, T. S.

2012-06-01

Both the quantity and the amount of time that an explosive is present on the surface of a material is dependent upon the amount of explosive originally deposited on the surface, the adhesive forces, temperature and humidity, as well as other environmental factors. This laboratory study focused on evaluating RDX crystal morphology changes resulting from variations in temperature and humidity conditions of the sample. The temperature and humidity conditions were controlled using a Tenney THRJ environmental chamber and a Tenney T11RC-1.5 environmental chamber. These chambers allow the temperature and humidity to be held within ±3 °C and ±5 % RH. The temperature and humidity conditions used for this test series were: 4 °C/40 %RH, 21 °C/20 %RH (samples left on benchtop), 21 °C/70 %RH, 21 °C/95 %RH, 35 °C/40 %RH, 35 °C/70 %RH, and 35 °C/95 %RH. These temperature and humidity set points were chosen to represent a wide range of conditions that may be found in real world scenarios. C-4 (RDX crystals and binder material) was deposited on the surface of one of six substrates by placing a fingerprint from the explosive block onto the matrix surface. The substrates were chosen to provide a range of items that are commonly used. Six substrate types were used during these tests: 50 % cotton/50 % polyester as found in T-shirts, 100 % cotton with a smooth surface such as that found in a cotton dress shirt, 100 % cotton on a rough surface such as that found on canvas or denim, suede leather such as might be found on jackets, purses, or shoes, painted metal obtained from a car hood, and a computer diskette. The samples were not pre-cleaned prior to testing and contained sizing agents, and in the case of the metal: oil, dirt, scratches, and rust spots. The substrates were photographed at various stages of testing, using a Zeiss Discover V12 stereoscope with Axiocam ICc1 3 megapixel digital camera, to determine any changes in the crystalline morphology. Some of the samples were examined using scanning electron microscopy and atomic force microscopy in an attempt to determine how the explosive was bound to the substrate. This is the second article in a series on the effects of temperature and relative humidity on trace explosive threats.

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Comparison between Conduction and Convection Effects on Self-Heating in Doped Microcantilevers

PubMed Central

Ansari, Mohd Zahid; Cho, Chongdu

2012-01-01

The present study investigates the effects of thermal conduction and convection on self-heating temperatures and bimetallic deflections produced in doped microcantilever sensors. These cantilevers are commonly used as sensors and actuators in microsystems. The cantilever is a monolith, multi-layer structure with a thin U-shaped element inside. The cantilever substrate is made of silicon and silicon dioxide, respectively, and the element is p-doped silicon. A numerical analysis package (ANSYS) is used to study the effect of cantilever substrate material, element width, applied voltage and the operating environments on cantilever characteristics. The numerical results for temperature are compared against their analytical models. Results indicate the numerical results are accurate within 6% of analytical, and Si/Si cantilevers are more suitable for biosensors and AFM, whereas, Si/SiO2 are for hotplates and actuators applications. PMID:22438736

Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

NASA Astrophysics Data System (ADS)

de Jong, M. M.

2013-01-01

In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the nanocrystalline silicon (nc-Si) regime. In the nc-Si regime, the crystalline fraction can be further controlled by changing the power input into the plasma. With these layers, a-Si thin film solar cells were fabricated, on glass and PC substrates. The adverse effect of the low temperature growth on the photoactive material is further mitigated by using thinner silicon layers, which can deliver a good current only with an adequate light trapping technique. We have simulated and experimentally tested three light trapping techniques, using embossed structures in PC substrates and random structures on glass: regular pyramid structures larger than the wavelength of light (micropyramids), regular pyramid structures comparable to the wavelength of light (nanopyramids) and random nano-textures (Asahi U-type). The use of nanostructured polycarbonate substrates results in initial conversion efficiencies of 7.4%, compared to 7.6% for cells deposited under identical conditions on Asahi U-type glass. The potential of manufacturing thin film solar cells at processing temperatures lower than 130oC is further illustrated by obtained results on texture-etched aluminium doped zinc-oxide (ZnO:Al) on glass: we achieved 6.9% for nc-Si cells using a very thin absorber layer of only 750 nm, and by combining a-Si and nc-Si cells in tandem solar cells we reached an initial conversion efficiency of 9.5%.

Decoupling interface effect on the phase stability of CdS thin films by van der Waals heteroepitaxy

NASA Astrophysics Data System (ADS)

Sun, Xin; Wang, Yiping; Seewald, Lucas J.; Chen, Zhizhong; Shi, Jian; Washington, Morris A.; Lu, Toh-Ming

2017-01-01

Wurtzite (W) and zinc-blende (ZB) polytypism has long been observed in epitaxial CdS thin films. The present work, based on van der Waals epitaxial CdS thin films, is an attempt to explain which crystal modification, W or ZB, is favored under different growth conditions. In this van der Waals epitaxy system where the substrate influence is considered weak, it is found that the substrate temperature plays a crucial role in determining the crystal modification of CdS, that is, W and ZB CdS are more stable at low and high ends of substrate temperature, respectively. We attribute this temperature effect to the entropy difference (SW < SZB), a conclusion well supported by the thermodynamic hard sphere model formulation of the entropy difference between hexagonal close-packed and face-centered cubic structures. By summarizing other works, we find that the entropy difference model can also be applied to large mismatched (≳3%) CdS-substrate chemical epitaxy systems but not for small mismatched (≲3%) ones. In the latter case, the energy benefit in terms of high density of bonding contributed by the substrate-film interface is believed to be too overwhelming for the intrinsic entropy difference to overcome. Furthermore, the deposition rate is found to affect the crystalline quality and strain level in CdS films but not the crystal modification of the CdS films. Last, Raman and photoluminescence spectroscopies reveal the strain behaviors in the films. The phase change from W to ZB CdS is well-correlated with the observed peak shifts in Raman and photoluminescence spectroscopies.

Effect of Pd Surface Roughness on the Bonding Process and High Temperature Reliability of Au Ball Bonds

NASA Astrophysics Data System (ADS)

Huang, Y.; Kim, H. J.; McCracken, M.; Viswanathan, G.; Pon, F.; Mayer, M.; Zhou, Y. N.

2011-06-01

A 0.3- μm-thick electrolytic Pd layer was plated on 1 μm of electroless Ni on 1 mm-thick polished and roughened Cu substrates with roughness values ( R a) of 0.08 μm and 0.5 μm, respectively. The rough substrates were produced with sand-blasting. Au wire bonding on the Ni/Pd surface was optimized, and the electrical reliability was investigated under a high temperature storage test (HTST) during 800 h at 250°C by measuring the ball bond contact resistance, R c. The average value of R c of optimized ball bonds on the rough substrate was 1.96 mΩ which was about 40.0% higher than that on the smooth substrate. The initial bondability increased for the rougher surface, so that only half of the original ultrasonic level was required, but the reliability was not affected by surface roughness. For both substrate types, HTST caused bond healing, reducing the average R c by about 21% and 27%, respectively. Au diffusion into the Pd layer was observed in scanning transmission electron microscopy/ energy dispersive spectroscopy (STEM-EDS) line-scan analysis after HTST. It is considered that diffusion of Au or interdiffusion between Au and Pd can provide chemically strong bonding during HTST. This is supported by the R c decrease measured as the aging time increased. Cu migration was indicated in the STEM-EDS analysis, but its effect on reliability can be ignored. Au and Pd tend to form a complete solid solution at the interface and can provide reliable interconnection for high temperature (250°C) applications.

Nano- and microcrystalline diamond deposition on pretreated WC-Co substrates: structural properties and adhesion

NASA Astrophysics Data System (ADS)

Fraga, M. A.; Contin, A.; Rodríguez, L. A. A.; Vieira, J.; Campos, R. A.; Corat, E. J.; Trava Airoldi, V. J.

2016-02-01

Many developments have been made to improve the quality and adherence of CVD diamond films onto WC-Co hard metal tools by the removing the cobalt from the substrate surface through substrate pretreatments. Here we compare the efficiency of three chemical pretreatments of WC-Co substrates for this purpose. First, the work was focused on a detailed study of the composition and structure of as-polished and pretreated substrate surfaces to characterize the effects of the substrate preparation. Considering this objective, a set of WC-9% Co substrates, before and after pretreatment, was analyzed by FEG-SEM, EDS and x-ray diffraction (XRD). The second stage of the work was devoted to the evaluation of the influence of seeding process, using 4 nm diamond nanoparticles, on the morphology and roughness of the pretreated substrates. The last and most important stage was to deposit diamond coatings with different crystallite sizes (nano and micro) by hot-filament CVD to understand fully the mechanism of growth and adhesion of CVD diamond films on pretreated WC-Co substrates. The transition from nano to microcrystalline diamond was achieved by controlling the CH4/H2 gas ratio. The nano and microcrystalline samples were grown under same time at different substrate temperatures 600 °C and 800 °C, respectively. The different substrate temperatures allowed the analysis of the cobalt diffusion from the bulk to the substrate surface during CVD film growth. Furthermore, it was possible to evaluate how the coating adhesion is affected by the diffusion. The diamond coatings were characterized by Raman spectroscopy, XRD, EDS, FEG-SEM, atomic force microscope and 1500 N Rockwell indentation to evaluate the adhesion.

High-fluence ion implantation in silicon carbide for fabrication of a compliant substrate

NASA Astrophysics Data System (ADS)

Lioubtchenko, Mikhail

GaN and related nitrides are promising materials for applications as UV/blue light emitters and in high-power, high-temperature electonic devices. Unfortunately, the vast potential of these materials cannot be realized effectively due to a large density of threading dislocations, arising from large lattice mismatch between GaN and utilized substrates. Therefore, a new approach to the heteroepitaxial growth is desirable, and a compliant substrate might help to remedy the situation. A modified model for the compliant substrate consisting of the compliant membrane glued to a thick handling substrate by a soft layer was proposed. We have chosen 6H-SiC as a starting substrate and ion implantation as a means of creating a buried layer. High fluence ion implantation of different species in 6H-SiC was performed at elevated temperatures and damage removal/accumulation was studied. It was found that temperatures around 1600°C are necessary to successfully recrystallize the radiation damage for Ti, Ga, Si and C implantations, but no damage removal was monitored for In implantation. In order to minimize the damage produced during ion implantation, it was decided to employ a multistep process in which each implantation step was followed by annealing. This approach was realized for 125 keV Ti++ and 300 keV Ga+ implantations up to a total dose of 1.8 x 1017 cm--2. Ti-implanted substrates were shown to retain good quality in the top layer, whereas Ga implantation preserves the quality of the near-surface region only at lower doses. The implanted species concentration was monitored after each step using Rutherford Backscattering (RBS). GaN films were grown on the prepared substrates and a control SiC sample by MOCVD. TEM and photoluminescence measurements have demonstrated that the quality of GaN films improves upon growth on compliant substrates.

Size effects and electron microscopy of thin metal films. M.S. Thesis

NASA Technical Reports Server (NTRS)

Hernandez, J. D.

1978-01-01

All films were deposited by resistive heated evaporation in an oil diffusion pumped vacuum system (ultimate approx. equal to 0.0000001 torr). The growth from nuclei to a continuous film is highly dependent on the deposition parameters, evaporation rate as well as substrate material and substrate temperature. The growth stages of a film and the dependence of grain size on various deposition and annealing parameters are shown. Resistivity measurements were taken on thin films to observe size effects.

Assessment of water droplet evaporation mechanisms on hydrophobic and superhydrophobic substrates.

PubMed

Pan, Zhenhai; Dash, Susmita; Weibel, Justin A; Garimella, Suresh V

2013-12-23

Evaporation rates are predicted and important transport mechanisms identified for evaporation of water droplets on hydrophobic (contact angle ~110°) and superhydrophobic (contact angle ~160°) substrates. Analytical models for droplet evaporation in the literature are usually simplified to include only vapor diffusion in the gas domain, and the system is assumed to be isothermal. In the comprehensive model developed in this study, evaporative cooling of the interface is accounted for, and vapor concentration is coupled to local temperature at the interface. Conjugate heat and mass transfer are solved in the solid substrate, liquid droplet, and surrounding gas. Buoyancy-driven convective flows in the droplet and vapor domains are also simulated. The influences of evaporative cooling and convection on the evaporation characteristics are determined quantitatively. The liquid-vapor interface temperature drop induced by evaporative cooling suppresses evaporation, while gas-phase natural convection acts to enhance evaporation. While the effects of these competing transport mechanisms are observed to counterbalance for evaporation on a hydrophobic surface, the stronger influence of evaporative cooling on a superhydrophobic surface accounts for an overprediction of experimental evaporation rates by ~20% with vapor diffusion-based models. The local evaporation fluxes along the liquid-vapor interface for both hydrophobic and superhydrophobic substrates are investigated. The highest local evaporation flux occurs at the three-phase contact line region due to proximity to the higher temperature substrate, rather than at the relatively colder droplet top; vapor diffusion-based models predict the opposite. The numerically calculated evaporation rates agree with experimental results to within 2% for superhydrophobic substrates and 3% for hydrophobic substrates. The large deviations between past analytical models and the experimental data are therefore reconciled with the comprehensive model developed here.

SOFI/Substrate integrity testing for cryogenic propellant tanks at extreme thermal gradient conditions

NASA Astrophysics Data System (ADS)

Haynes, M.; Fabian, P.

2015-12-01

Liquid propellant tank insulation for space flight requires low weight as well as high insulation factors. Use of Spray-On Foam Insulation (SOFI) is an accepted, cost effective technique for insulating a single wall cryogenic propellant tank and has been used extensively throughout the aerospace industry. Determining the bond integrity of the SOFI to the metallic substrate as well as its ability to withstand the in-service strains, both mechanical and thermal, is critical to the longevity of the insulation. This determination has previously been performed using highly volatile, explosive cryogens, which increases the test costs enormously, as well as greatly increasing the risk to both equipment and personnel. CTD has developed a new test system, based on a previous NASA test that simulates the mechanical and thermal strains associated with filling a large fuel tank with a cryogen. The test enables a relatively small SOFI/substrate sample to be monitored for any deformations, delaminations, or disjunctures during the cooling and mechanical straining process of the substrate, and enables the concurrent application of thermal and physical strains to two specimens at the same time. The thermal strains are applied by cooling the substrate to the desired cryogen temperature (from 4 K to 250 K) while maintaining the outside surface of the SOFI foam at ambient conditions. Multiple temperature monitoring points are exercised to ensure even cooling across the substrate, while at the same time, surface temperatures of the SOFI can be monitored to determine the heat flow. The system also allows for direct measurement of the strains in the substrate during the test. The test system as well as test data from testing at 20 K, for liquid Hydrogen simulation, will be discussed.

Developing upconversion nanoparticle-based smart substrates for remote temperature sensing

NASA Astrophysics Data System (ADS)

Coker, Zachary; Marble, Kassie; Alkahtani, Masfer; Hemmer, Philip; Yakovlev, Vladislav V.

2018-02-01

Recent developments in understanding of nanomaterial behaviors and synthesis have led to their application across a wide range of commercial and scientific applications. Recent investigations span from applications in nanomedicine and the development of novel drug delivery systems to nanoelectronics and biosensors. In this study, we propose the application of a newly engineered temperature sensitive water-based bio-compatible core/shell up-conversion nanoparticle (UCNP) in the development of a smart substrate for remote temperature sensing. We developed this smart substrate by dispersing functionalized nanoparticles into a polymer solution and then spin-coating the solution onto one side of a microscope slide to form a thin film substrate layer of evenly dispersed nanoparticles. By using spin-coating to deposit the particle solution we both create a uniform surface for the substrate while simultaneously avoid undesired particle agglomeration. Through this investigation, we have determined the sensitivity and capabilities of this smart substrate and conclude that further development can lead to a greater range of applications for this type smart substrate and use in remote temperature sensing in conjunction with other microscopy and spectroscopy investigations.

High-temperature wear and oxidation behaviors of TiNi/Ti2Ni matrix composite coatings with TaC addition prepared on Ti6Al4V by laser cladding

NASA Astrophysics Data System (ADS)

Lv, Y. H.; Li, J.; Tao, Y. F.; Hu, L. F.

2017-04-01

TiNi/Ti2Ni matrix composite coatings were produced on Ti6Al4V surfaces by laser cladding the mixed powders of Ni-based alloy and different contents of TaC (0, 5, 10, 15, 20, 30 and 40 wt.%). Microstructures of the coatings were investigated. High-temperature wear tests of the substrate and the coatings were carried out at 600 °C in air for 30 min. High-temperature oxidation tests of the substrate and the coatings were performed at 1000 °C in air for 50 h. Wear and oxidation mechanisms were revealed in detail. The results showed that TiNi/Ti2Ni as the matrix and TiC/TiB2/TiB as the reinforcements are the main phases of the coatings. The friction coefficients of the substrate and the coatings with different contents of TaC were 0.431 (the substrate), 0.554 (0 wt.%), 0.486 (5 wt.%), 0.457 (10 wt.%), 0.458 (15 wt.%), 0.507 (20 wt.%), 0.462 (30 wt.%) and 0.488 (40 wt.%). The wear rates of the coatings were decreased by almost 83%-98% than that of the substrate and presented a decreasing tendency with increasing TaC content. The wear mechanism of the substrate was a combination of serious oxidation, micro-cutting and brittle debonding. For the coatings, oxidation and slight scratching were predominant during wear, accompanied by slight brittle debonding in partial zones. With the increase in content of TaC, the oxidation film better shielded the coatings from destruction due to the effective friction-reducing role of Ta2O5. The oxidation rates of the substrate and the coatings with different contents of TaC at 1000 °C were 12.170 (the substrate), 5.886 (0 wt.%), 4.937 (5 wt.%), 4.517 (10 wt.%), 4.394 (15 wt.%), 3.951 (20 wt.%), 4.239 (30 wt.%) and 3.530 (40 wt.%) mg2 cm-4 h-1, respectively. The oxidation film formed outside the coating without adding TaC was composed of TiO2, NiO, Cr2O3, Al2O3 and SiO2. When TaC was added, Ta2O5 and TaC were also detected, which effectively improved the oxidation resistance of the coatings. The addition of TaC contributed to the improvement in high-temperature wear and oxidation resistance.

Novel nanostructured oxygen sensor

NASA Astrophysics Data System (ADS)

Boardman, Alan James

New government regulations and industry requirements for medical oxygen sensors require the development of alternate materials and process optimization of primary sensor components. Current oxygen sensors are not compliant with the Restriction of Hazardous Substances (RoHS) Directive. This work focused on two areas. First, was finding suitable readily available materials for the sensor anodes. Second was optimizing the processing of the sensor cathode membrane for reduced delamination. Oxygen sensors were made using tin (Sn) and bismuth (Bi) electrodes, potassium hydroxide (KOH) and acetic acid (CH3COOH) electrolytes with platinum (Pt) and gold (Au) reference electrodes. Bi electrodes were fabricated by casting and pressing processes. Electrochemical characterization of the Sn and Bi electrodes was performed by Cyclic Voltammetry (CV), Electrochemical Impedance Spectroscopy (EIS) and sensing characterization per BSEN ISO 21647:2009 at various oxygen percentages, 0%, 20.9% and 100% oxygen levels with an automated test apparatus. The Sn anode with both electrolyte solutions showed good oxygen sensing properties and performance in a sensor. This system shows promise for replacement of Pb electrodes as required by the RoHS Directive. The Bi anode with Au cathode in both KOH and CH3COOH electrolytes showed acceptable performance and oxygen sensing properties. The Bi anodes fabricated by separate manufacturing methods demonstrated effectiveness for use in medical oxygen sensors. Gold thin films were prepared by magnetron sputtering on Flouroethylene Polymer (FEP) films. The FEP substrate temperature ranged from -77°C to 50°C. X-Ray Diffraction (XRD) and 4-point resistivity characterized the effects of substrate temperature to Au thin film particle size. XRD peak broadening and resistivity measurements showed a strong correlation of particle size to FEP substrate temperature. Particle size at 50°C was 594A and the -77°C particle size was 2.4 x 103A. Substrate temperature exhibited a strong correlation to adhesion of the Au thin film to the FEP. Adhesion of the Au thin film with a FEP temperature of 50°C was rated a 3B per the ASTM D3359-02 peel test standard. At FEP substrate temperature of -77°C it was rated at 1B. The morphology of the deposited Au thin films was observed using optical microscopy and Scanning Electron Microscopy (SEM).

Evidence for proton tunneling and a transient covalent flavin-substrate adduct in choline oxidase S101A.

PubMed

Uluisik, Rizvan; Romero, Elvira; Gadda, Giovanni

2017-11-01

The effect of temperature on the reaction of alcohol oxidation catalyzed by choline oxidase was investigated with the S101A variant of choline oxidase. Anaerobic enzyme reduction in a stopped-flow spectrophotometer was biphasic using either choline or 1,2-[ 2 H 4 ]-choline as a substrate. The limiting rate constants k lim1 and k lim2 at saturating substrate were well separated (k lim1 /k lim2 >9), and were >15-fold slower than for wild-type choline oxidase. Solvent deuterium kinetic isotope effects (KIEs) ~4 established that k lim1 probes the proton transfer from the substrate hydroxyl to a catalytic base. Primary substrate deuterium KIEs ≥7 demonstrated that k lim2 reports on hydride transfer from the choline alkoxide to the flavin. Between 15°C and 39°C the k lim1 and k lim2 values increased with increasing temperature, allowing for the analyses of H + and H - transfers using Eyring and Arrhenius formalisms. Temperature-independent KIE on the k lim1 value ( H2O k lim1 / D2O k lim1 ) suggests that proton transfer occurs within a highly reorganized tunneling-ready-state with a narrow distribution of donor-acceptor distances. Eyring analysis of the k lim2 value gave lines with the slope (choline) >slope (D-choline) , suggesting kinetic complexity. Spectral evidence for the transient occurrence of a covalent flavin-substrate adduct during the first phase of the anaerobic reaction of S101A CHO with choline is presented, supporting the notion that an important role of amino acid residues in the active site of flavin-dependent enzymes is to eliminate alternative reactions of the versatile enzyme-bound flavin for the reaction that needs to be catalyzed. Copyright © 2017 Elsevier B.V. All rights reserved.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, F.; Hoard, R.W.

1994-05-10

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, Fred; Hoard, Ronald W.

1994-01-01

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Seasonal patterns of body temperature and microhabitat selection in a lacertid lizard

NASA Astrophysics Data System (ADS)

Ortega, Zaida; Pérez-Mellado, Valentín

2016-11-01

In temperate areas, seasonal changes entail a source of environmental variation potentially important for organisms. Temperate ectotherms may be adapted to the seasonal fluctuations in environmental traits. For lizards, behavioural adaptations regarding microhabitat selection could arise to improve thermoregulation during the different seasons. However, little is still known about which traits influence microhabitat selection of lizards and their adaptation to seasonality. Here we used Podarcis guadarramae to study the role of potential intrinsic (body size, sex, age) and environmental traits (air and substrate temperatures, wind speed, and sunlight) in the seasonal changes of body temperatures and microhabitat selection of lizards. We measured body temperatures of lizards in the same habitat during the four seasons and compared the climatic variables of the microhabitats selected by lizards with the mean climatic conditions available in their habitat. Body temperatures were similar for adult males, adult females, and juveniles within each season, being significantly higher in summer than in the other seasons, and in spring than in winter. The same pattern was found regarding substrate and air temperatures of the selected microhabitats. Wind speed and air temperature did not affect body temperatures, while body length was marginally significant and substrate temperatures and season did affect the body temperatures of lizards. Our results during the whole year support the idea that the seasonality could be the most important factor affecting body temperatures of these temperate species. Regarding microhabitat selection, environmental constraints, as environmental temperatures and wind speed, affected the seasonal changes on behavioural thermoregulation of lizards. This effect was similar between sexes and age classes, and was independent of body size. In addition, importance of sunlight exposure of the selected microhabitats (full sun, filtered sun, or shade) also changed between seasons. Hence, environmental constraints were the main forces driving seasonal changes in microhabitat selection.

HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

NASA Astrophysics Data System (ADS)

Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

2014-03-01

In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

Plasticized Polymer Interlayer for Low-Temperature Fabrication of a High-Quality Silver Nanowire-Based Flexible Transparent and Conductive Film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Wonhee; Kang, Hong Suk; Choi, Jaeho

Silver nanowires (AgNWs) are one of the most promising materials to replace commercially available indium tin oxide in flexible transparent conductive films (TCFs); however, there are still numerous problems originating from poor AgNW junction formation and improper AgNW embedment into transparent substrates. To mitigate these problems, high-temperature processes have been adopted; however, unwanted substrate deformation prevents the use of these processes for the formation of flexible TCFs. In this work, we present a novel poly(methyl methacrylate) interlayer plasticized by dibutyl phthalate for low-temperature fabrication of AgNW-based TCFs, which does not cause any substrate deformation. By exploiting the viscoelastic properties ofmore » the plasticized interlayer near the lowered glass-transition temperature, a monolithic junction of AgNWs on the interlayer and embedment of the interconnected AgNWs into the interlayer are achieved in a single-step pressing. The resulting AgNW-TCFs are highly transparent (~92% at a wavelength of 550 nm), highly conductive (<90 Ω/sq), and environmentally and mechanically robust. Therefore, the plasticized interlayer provides a simple and effective route to fabricate high-quality AgNW-based TCFs.« less

Inorganic-polymer-derived dielectric films

DOEpatents

Brinker, C. Jeffrey; Keefer, Keith D.; Lenahan, Patrick M.

1987-01-01

A method of coating a substrate with a thin film of a polymer of predetermined porosity comprises depositing the thin film on the substrate from a non-gelled solution comprising at least one hydrolyzable metal alkoxide of a polymeric network forming cation, water, an alcohol compatible with the hydrolysis and the polymerization of the metal alkoxide, and an acid or a base, prior to depositing the film, controlling the structure of the polymer for a given composition of the solution exclusive of the acid or base component and the water component, (a) by adjusting each of the water content, the pH, and the temperature to obtain the desired concentration of alkoxide, and then adjusting the time of standing of the solution prior to lowering the temperature of the solution, and (b) lowering the temperature of the solution after the time of standing to about 15 degrees C. or lower to trap the solution in a state in which, after the depositing step, a coating of the desired porosity will be obtained, and curing the deposited film at a temperature effective for curing whereby there is obtained a thin film of a polymer of a predetermined porosity and corresponding pore size on the substrate.

High temperature electronic gain device

DOEpatents

McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

1979-01-01

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

Thin transparent conducting films of cadmium stannate

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.

2001-01-01

A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

Solid state dewetting of thin plasmonic films under focused cw-laser irradiation

DOE PAGES

Abbott, William M.; Corbett, Simon; Cunningham, Graeme; ...

2017-12-21

Elevated temperatures and large thermal gradients are a significant source of component failure in microelectronics, and is the limiting factor in heat-assisted magnetic recording (HAMR). Here, we have investigated the effect of solid-state dewetting in Au thin films, as a function of local temperature, film thickness, and substrate adhesion. In this work, a localised temperature rise is induced in thin (≤ 50 nm) polycrystalline Au films on SiO 2 substrates via focused continuous-wave laser irradiation at 488 nm. The magnitude and distribution of the total temperature rise is measured using CCD-based thermoreflectance. This also allows a sensitive measurement of themore » temperature at which dewetting occurs, showing that for thin (≤ 50 nm) Au films without adhesion layers, rapid dewetting can occur at temperatures as low as 50° C. The time decay of the reflected light from the illuminating laser is used to monitor locally the dynamics of solid state dewetting. TEM diffraction analysis shows significant changes in the microstructure and crystallographic texture of the films as far as 10 µm away from the illuminated area. The use of a thin metallic adhesion layer (such as Ti or Cr) is shown to significantly improve the adhesion of the Au to the substrate and reduce the tendency towards dewetting, but does not entirely protect it from changes to the crystallographic texture.« less

Solid state dewetting of thin plasmonic films under focused cw-laser irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbott, William M.; Corbett, Simon; Cunningham, Graeme

Elevated temperatures and large thermal gradients are a significant source of component failure in microelectronics, and is the limiting factor in heat-assisted magnetic recording (HAMR). Here, we have investigated the effect of solid-state dewetting in Au thin films, as a function of local temperature, film thickness, and substrate adhesion. In this work, a localised temperature rise is induced in thin (≤ 50 nm) polycrystalline Au films on SiO 2 substrates via focused continuous-wave laser irradiation at 488 nm. The magnitude and distribution of the total temperature rise is measured using CCD-based thermoreflectance. This also allows a sensitive measurement of themore » temperature at which dewetting occurs, showing that for thin (≤ 50 nm) Au films without adhesion layers, rapid dewetting can occur at temperatures as low as 50° C. The time decay of the reflected light from the illuminating laser is used to monitor locally the dynamics of solid state dewetting. TEM diffraction analysis shows significant changes in the microstructure and crystallographic texture of the films as far as 10 µm away from the illuminated area. The use of a thin metallic adhesion layer (such as Ti or Cr) is shown to significantly improve the adhesion of the Au to the substrate and reduce the tendency towards dewetting, but does not entirely protect it from changes to the crystallographic texture.« less

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Preparation and Characterization of RF Sputtered BARIUM(2) SILICON(2) Titanium OXYGEN(8) Thin Films

NASA Astrophysics Data System (ADS)

Li, Yi.

Thin films of barium titanium silicate ( Ba_2Si_2TiO_8) are grown on crystalline (100) Si at substrate temperatures raging from 750 to 955^circC by the radio-frequency triode sputtering technique. The chemical composition, microstructure, physical properties, and growth conditions of the deposited films are investigated by dc and high-frequency dielectric measurements, wavelength dispersive and energy dispersive x-ray spectrometries, x-ray diffraction spectrometry, and optical and scanning electron microscopies. The results of the x-ray diffraction analysis show that the Ba_2Si_2TiO _8 films deposited at the optimum condition of substrate temperature of 845^circ C, 4 cm source-substance distance, 50 W rf power, and 1.2 times 10^ {-3} torr pressure of Ar, are highly c -axis oriented. The as-deposited films are smooth, glossy, polycrystalline films, exhibiting a bulk resistivity range of 10^6 Omegacdotcm, and an isotropic surface resistivity of 1.5 times 10^3 Omegacdot cm. The relative dielectric constant is 0.05, and the dielectric loss is lower than 1.0, in the frequency band 9 ~ 1000 MHz. The high-frequency impedance of BST films, which is typical for piezoelectric materials, gives a minimum impedance frequency of 9.0 MHz and a series resonant frequency of 9.5 MHz. Optical and SEM observations show that the film texture is dependent on the substrate conditions. The non-liquid-like grain coalescence of the Ba_2Si_2TiO _8 grains is characteristic of a strong film -substrate interaction. The grain growth kinetics obtained from "short-time" sputtering gives an initial lateral grain growth rate of 770 nm/min at 845^circ C, which decreases with the grain size. The initial film growth rate in the direction of thickness, measured from SEM micrographs, is 1.95 nm/min, and decreases with sputtering time. The activation free energy for grain growth is 359 +/- 30 KJ/mol for the initial stage, decreasing to 148 +/- 20 KJ/mol for the final stage. The variation of the grain growth rate and the activation energy with grain size is the result of a combined nucleation and growth mechanism in the initial stage of the film growth, and a coalescence -dominated growth mechanism at longer sputtering time and at higher temperature. Film orientation is sensitive to the supersaturation adjacent to the film surface, which depends on the source-substrate distance and substrate temperature. The effect of the substrate temperature on the orientation of the film is investigated over a wide temperature range using (100) and (111) Si substrates. Several orientations for the BST films, including an amorphous state, are obtained with increasing substrate temperature. This is discussed in relation to the atomic plane density and the energetics for the deposition process.

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

NASA Astrophysics Data System (ADS)

Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

2000-11-01

Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, Falah S.; Nelson, Art J.

1996-01-01

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

Deposition method for producing silicon carbide high-temperature semiconductors

DOEpatents

Hsu, George C.; Rohatgi, Naresh K.

1987-01-01

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuda, Yukio; Otani, Yohei; Okamoto, Hiroshi

2011-09-26

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surfacemore » can move from the valence band edge to the conduction band edge.« less

Oxygen plasma ashing effects on aluminum and titanium space protective coatings

NASA Technical Reports Server (NTRS)

Synowicki, R.; Kubik, R. D.; Hale, J. S.; Peterkin, Jane; Nafis, S.; Woollam, John A.; Zaat, S.

1991-01-01

Using variable angle spectroscopic ellipsometry and atomic force microscopy (AFM), the surface roughness and oxidation of aluminum and titanium thin films have been studied as a function of substrate deposition temperature and oxygen plasma exposure. Increasing substrate deposition temperatures affect film microstructure by greatly increasing grain size. Short exposures to an oxygen plasma environment produce sharp spikes rising rapidly above the surface as seen by AFM. Ellipsometric measurements were made over a wide range of plasma exposure times, and results at longer exposure times suggest that the surface is greater than 30% void. This is qualitatively verified by the AFM images.

Fabrication and electrical properties of low temperature-processed thin-film-transistors with chemical-bath deposited ZnO layer.

PubMed

Ahn, Joo-Seob; Kwon, Ji-Hye; Yang, Heesun

2013-06-01

ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of approimately 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiN(x)/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm2/V x s.

Heat and Mass Transfer Measurements for Tray-Fermented Fungal Products

NASA Astrophysics Data System (ADS)

Jou, R.-Y.; Lo, C.-T.

2011-01-01

In this study, heat and mass transfer in static tray fermentation, which is widely used in solid-state fermentation (SSF) to produce fungal products, such as enzymes or koji, is investigated. Specifically, kinetic models of transport phenomena in the whole-tray chamber are emphasized. The effects of temperature, moisture, and humidity on microbial growth in large-scale static tray fermentation are essential to scale-up SSF and achieve uniform fermentation. In addition, heat and mass transfer of static tray fermentation of Trichoderma fungi with two tray setups—traditional linen coverings and stacks in a temperature-humidity chamber is examined. In both these setups, the following factors of fermentation were measured: air velocity, air temperature, illumination, pH, carbon dioxide (CO2) concentration, and substrate temperature, and the effects of bed height, moisture of substrate, and relative humidity of air are studied. A thin (1 cm) bed at 28 °C and 95 % relative humidity is found to be optimum. Furthermore, mixing was essential for achieving uniform fermentation of Trichoderma fungi. This study has important applications in large-scale static tray fermentation of fungi.

Effect of Substrate Roughness on Adhesion and Structural Properties of Ti-Ni Shape Memory Alloy Thin Film.

PubMed

Kim, Donghwan; Lee, Hyunsuk; Bae, Joohyeon; Jeong, Hyomin; Choi, Byeongkeun; Nam, Taehyun; Noh, Jungpil

2018-09-01

Ti-Ni shape memory alloy (SMA) thin films are very attractive material for industrial and medical applications such as micro-actuator, micro-sensors, and stents for blood vessels. An important property besides shape memory effect in the application of SMA thin films is the adhesion between the film and the substrate. When using thin films as micro-actuators or micro-sensors in MEMS, the film must be strongly adhered to the substrate. On the other hand, when using SMA thin films in medical devices such as stents, the deposited alloy thin film must be easily separable from the substrate for efficient processing. In this study, we investigated the effect of substrate roughness on the adhesion of Ti-Ni SMA thin films, as well as the structural properties and phase-transformation behavior of the fabricated films. Ti-Ni SMA thin films were deposited onto etched glass substrates with magnetron sputtering. Radio frequency plasma was used for etching the substrate. The adhesion properties were investigated through progressive scratch test. Structural properties of the films were determined via Feld emission scanning electron microscopy, X-ray diffraction measurements (XRD) and Energy-dispersive X-ray spectroscopy analysis. Phase transformation behaviors were observed with differential scanning calorimetry and low temperature-XRD. Ti-Ni SMA thin film deposited onto rough substrate provides higher adhesive strength than smooth substrate. However the roughness of the substrate has no influence on the growth and crystallization of the Ti-Ni SMA thin films.

Role of low O 2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

NASA Astrophysics Data System (ADS)

Pandis, Ch.; Brilis, N.; Tsamakis, D.; Ali, H. A.; Krishnamoorthy, S.; Iliadis, A. A.

2006-06-01

Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O 2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O 2 partial pressure is reduced from 10 -4 to 10 -7 Torr at growth temperatures lower than 400 °C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O 2 pressures.

Development of sputtering process to deposit stoichiometric zirconia coatings for the inside wall of regeneratively cooled rocket thrust chambers

NASA Technical Reports Server (NTRS)

Busch, R.

1978-01-01

Thermal barrier coatings of yttria stabilized zirconia and zirconia-ceria mixtures were deposited by RF reactive sputtering. Coatings were 1-2 mils thick, and were deposited on copper cylinders intended to simulate the inner wall of a regeneratively cooled thrust chamber. Coating stoichiometry and adherence were investigated as functions of deposition parameters. Modest deposition rates (approximately 0.15 mil/hr) and subambient sustrate temperatures (-80 C) resulted in nearly stoichiometric coatings which remained adherent through thermal cycles between -196 and 400 C. Coatings deposited at higher rates or substrates temperatures exhibited greater oxygen deficiences, while coatings deposited at lower temperatures were not adherent. Substrate bias resulted in structural changes in the coating and high krypton contents; no clear effect on stoichiometry was observed.

Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO{sub 3}(110)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Guanyu; Zhang, Ding; Liu, Chong

2016-05-16

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on SrTiO{sub 3} (STO)(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling microscopy measurement, we observe a superconducting gap as large as 17 meV on the 1-UC FeSe films. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset transition temperature (T{sub C}) of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that T{sub C} can be further increased by external electric field although the effect is weaker than that on STO(001) substrate.

Annealing temperature dependence of magnetoimpedance effect in electrodeposited [Ni80fe20/Cu]3 multilayers

NASA Astrophysics Data System (ADS)

Maulana, Frendi; Eko Prastyo, W.; Nuryani; Purnama, B.

2017-11-01

We have conducted an experiment of magnetoimpedance with a variation of annealing temperature of [Ni80Fe20/Cu)]3 multilayers. The multilayer is electrodeposited on Cu-PCB substrate. Magnetoimpedance effect is impedance measure on account of external magnetic field. The found MI (magnetoimpedance) ratio is 7,63 % (without annealing) and 4,75 % (using annealing) of 100 ºC. We find that MI ratio depends on to annealing temperature and current frequence. MI ratio decreases due to rising temperature and identified increase due to the frequency. The highest MI ratio is on a sample without annealing temperature and measurement at 100 kHz frequence.

Structural properties of zirconia - in-situ high temperature XRD characterization

NASA Astrophysics Data System (ADS)

Kurpaska, Lukasz

2018-07-01

In this work, the effect of high temperature on structural properties of pure zirconium have been investigated. In-situ X-ray diffraction analysis of the oxide layer formed at temperature window 25-600 °C on pure zirconium were performed. Conducted experiment aimed at investigation of the zirconia phases developed on surface of the metallic substrate. Based on the conducted studies, possible stress state (during heating, continuous oxidation and cooling), cell parameters and HWHM factor were analyzed. A tetragonal and monoclinic phases peak shifts and intensities change were observed, suggesting that different phases react in different way upon temperature effect.

Simulation study of temperature-dependent diffusion behaviors of Ag/Ag(001) at low substrate temperature

NASA Astrophysics Data System (ADS)

Cai, Danyun; Mo, Yunjie; Feng, Xiaofang; He, Yingyou; Jiang, Shaoji

2017-06-01

In this study, a model based on the First Principles calculations and Kinetic Monte Carlo simulation were established to study the growth characteristic of Ag thin film at low substrate temperature. On the basis of the interaction between the adatom and nearest-neighbor atoms, some simplifications and assumptions were made to categorize the diffusion behaviors of Ag adatoms on Ag(001). Then the barriers of all possible diffusion behaviors were calculated using the Climbing Image Nudged Elastic Band method (CI-NEB). Based on the Arrhenius formula, the morphology variation, which is attributed to the surface diffusion behaviors during the growth, was simulated with a temperature-dependent KMC model. With this model, a non-monotonic relation between the surface roughness and the substrate temperature (decreasing from 300 K to 100 K) were discovered. The analysis of the temperature dependence on diffusion behaviors presents a theoretical explanation of diffusion mechanism for the non-monotonic variation of roughness at low substrate temperature.

Temperature controlled properties of sub-micron thin SnS films

NASA Astrophysics Data System (ADS)

Nwankwo, Stephen N.; Campbell, Stephen; Reddy, Ramakrishna K. T.; Beattie, Neil S.; Barrioz, Vincent; Zoppi, Guillaume

2018-06-01

Tin sulphide (SnS) thin films deposited by thermal evaporation on glass substrates are studied for different substrate temperatures. The increase in substrate temperature results in the increase of the crystallite size and change in orientation of the films. The crystal structure of the films is that of SnS only and for temperatures ≤300 °C the films are of random orientation, whereas for higher temperatures the films become (040) oriented. The variation of Sn/S composition was accompanied by a reduction in optical energy bandgap from 1.47 to 1.31 eV as the substrate temperature increases. The Urbach energy was found stable at 0.169 ± 0.002 eV for temperature up to 350 °C. Photoluminescence emission was observed only for films exhibiting stoichiometric properties and shows that a precise control of the film composition is critical to fabricate devices while an increase in grain size will be essential to achieve high efficiency.

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

DOE PAGES

Dalal, Shakeel S.; Walters, Diane M.; Lyubimov, Ivan; ...

2015-03-23

Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. In this paper, we apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (T substrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by T substrate/T g, where T g is themore » glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. Finally, by showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics.« less

Relation between the conditions of preparation and the polarization characteristics of spongy Raney nickel electrodes used as anodes for fuel cells

NASA Astrophysics Data System (ADS)

Tomida, Tahei; Okamura, Kazuhiro; Ashida, Toshifumi; Nakabayashi, Ichiro

1992-04-01

Spongy Raney nickel electrodes were prepared from substrates of spongy nickel plate coated with aluminum. Influences of the temperature for alloying and the weight ratio of aluminum to nickel (Al/Ni) in the substrate on polarization characteristics were studied in connection with the alloy compositions formed, and the surface microstructure of the catalysts. For this, the ratio Al/Ni in the substrate was varied ranging from 0.1 to 2.5. Electrode performance was improved, with increases in both the temperature for alloying and the Al/Ni ratio of the substrates. However, the higher the temperature used for alloying, the lower were the effects of the Al/Ni ratio. The activated Raney nickel was prepared from an alloy whose components were NiAl3 and/or Ni2Al3. It was also shown that a good polarization performance resulted from the increase in activated nickel grains, which were observed by scanning electron microscopy, and an increase in the Brunauer, Emmett, and Teller (BET) surface area of the electrode-catalyst. The broad peaks observed in X-ray diffraction of Raney nickel catalysts implied crystal distortions, which should be closely related to an increase in the BET surface area.

Preparation and characterization of TiO2 and Si-doped octacalcium phosphate composite coatings on zirconia ceramics (Y-TZP) for dental implant applications

NASA Astrophysics Data System (ADS)

Bao, Lei; Liu, Jingxiao; Shi, Fei; Jiang, Yanyan; Liu, Guishan

2014-01-01

In order to prevent the low temperature degradation and improve the bioactivity of zirconia ceramic implants, TiO2 and Si-doped octacalcium phosphate composite coating was prepared on zirconia substrate. The preventive effect on low temperature degradation and surface morphology of the TiO2 layer were studied. Meanwhile, the structure and property changes of the bioactive coating after doping Si were discussed. The results indicate that the dense TiO2 layer, in spite of some microcracks, inhibited the direct contact of the water vapor with the sample's surface and thus prevented the low temperature degradation of zirconia substrates. The acceleration aging test shows that the ratio of the monoclinic phase transition decreased from 10% for the original zirconia substrate to 4% for the TiO2-coated substrate. As to the Si-doped octacalcium phosphate coating prepared by biomimetic method, the main phase composition of the coating was octacalcium phosphate. The morphology of the coating was lamellar-like, and the surface was uniform and continuous with no cracks being observed. It is suggested that Si was added into the coating both through substituting for PO43- and doping as NaSiO3.

Articles for high temperature service and methods for their manufacture

DOEpatents

Sarrafi-Nour, Reza; Meschter, Peter Joel; Johnson, Curtis Alan; Luthra, Krishan Lal; Rosenzweig, Larry Steven

2016-06-14

An article for use in aggressive environments is presented. In one embodiment, the article comprises a substrate and a self-sealing and substantially hermetic sealing layer comprising an alkaline-earth aluminosilicate disposed over the bondcoat. The substrate may be any high-temperature material, including, for instance, silicon-bearing ceramics and ceramic matrix composites. A method for making such articles is also presented. The method comprises providing a substrate; disposing a self-sealing alkaline-earth aluminosilicate layer over the substrate; and heating the sealing layer to a sealing temperature at which at least a portion of the sealing layer will flow.

Synthesis of DHA/EPA-rich phosphatidylcholine by immobilized phospholipase A1: effect of water addition and vacuum condition.

PubMed

Li, Daoming; Qin, Xiaoli; Wang, Weifei; Li, Zhigang; Yang, Bo; Wang, Yonghua

2016-08-01

DHA/EPA-rich phosphatidylcholine (PC) was successfully synthesized by immobilized phospholipase A1 (PLA1)-catalyzed transesterification of PC and DHA/EPA-rich ethyl esters in a solvent-free system. Effects of reaction temperature, water addition and substrate mass ratio on the incorporation of DHA/EPA were evaluated using response surface methods (RSM). Water addition had most significant effect on the incorporation. Reaction temperature and substrate mass ratio, however, had no significant effect on the incorporation. The maximal incorporation was 19.09 % (24 h) under the following conditions: temperature 55.7 °C, water addition 1.1 wt % and substrate mass ratio (ethyl esters/PC) 6.8:1. Furthermore, effects of water addition (from 0 to 1.25 wt %) on DHA/EPA incorporation and the composition of products were further investigated. The immobilized PLA1 was more active when water addition was above 0.5 wt %. By monitoring the reaction processes with different water addition, a possible reaction scheme was proposed for transesterification of PC with DHA/EPA-rich ethyl esters. In summary, PC and sn2-lysophosphatidylocholine (LPC) were predominant in the mixtures at early stages of reaction, whereas sn1-LPC and glycerophosphocholine (GPC) predominant at later stages. The vacuum employed after 24 h significantly increased the incorporation of DHA/EPA and the composition of PC, and the highest incorporation (30.31 %) of DHA/EPA was obtained at 72 h and the yield of PC was 47.2 %.

Data on the detail information of influence of substrate temperature on the film morphology and photovoltaic performance of non-fullerene organic solar cells.

PubMed

Zhang, Jicheng; Xie, SuFei; Lu, Zhen; Wu, Yang; Xiao, Hongmei; Zhang, Xuejuan; Li, Guangwu; Li, Cuihong; Chen, Xuebo; Ma, Wei; Bo, Zhishan

2017-10-01

This data contains additional data related to the article "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" (Jicheng Zhang et al., In press) [1]. Data include measurement and characterization instruments and condition, detail condition to fabricate norfullerene solar cell devices, hole-only and electron-only devices. Detail condition about how to control the film morphology of devices via tuning the temperature of substrates was also displayed. More information and more convincing data about the change of film morphology for active layers fabricated from different temperature, which is attached to the research article of "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" was given.

The effect of temperature, matrix alloying and substrate coatings on wettability and shear strength of Al/Al2O3 couples

NASA Astrophysics Data System (ADS)

Sobczak, N.; Ksiazek, M.; Radziwill, W.; Asthana, R.; Mikulowski, B.

2004-03-01

A fresh approach has been advanced to examine in the Al/Al2O3 system the effects of temperature, alloying of Al with Ti or Sn, and Ti and Sn coatings on the substrate, on contact angles measured using a sessile-drop test, and on interface strength measured using a modified push-off test that allows shearing of solidified droplets with less than 90 deg contact angle. In the modified test, the solidified sessile-drop samples are bisected perpendicular to the drop/Al2O3 interface at the midplane of the contact circle to obtain samples that permit bond strength measurement by stress application to the flat surface of the bisected couple. The test results show that interface strength is strongly influenced by the wetting properties; low contact angles correspond to high interface strength, which also exhibits a strong temperature dependence. An increase in the wettability test temperature led to an increase in the interface strength in the low-temperature range where contact angles were large and wettability was poor. The room-temperature shear tests conducted on thermally cycled sessile-drop test specimens revealed the effect of chemically formed interfacial oxides; a weakening of the thermally cycled Al/Al2O3 interface was caused under the following conditions: (1) slow contact heating and short contact times in the wettability test, and (2) fast contact heating and longer contact times. The addition of 6 wt pct Ti or 7 wt pct Sn to Al only marginally influenced the contact angle and interfacial shear strength. However, Al2O3 substrates having thin (<1 µm) Ti coatings yielded relatively low contact angles and high bond strength, which appears to be related to the dissolution of the coating in Al and formation of a favorable interface structure.

Method and apparatus for forming conformal SiN.sub.x films

DOEpatents

Wang, Qi

2007-11-27

A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.

Transparent anodic TiO2 nanotube arrays on plastic substrates for disposable biosensors and flexible electronics.

PubMed

Farsinezhad, Samira; Mohammadpour, Arash; Dalrymple, Ashley N; Geisinger, Jared; Kar, Piyush; Brett, Michael J; Shankar, Karthik

2013-04-01

Exploitation of anodically formed self-organized TiO2 nanotube arrays in mass-manufactured, disposable biosensors, rollable electrochromic displays and flexible large-area solar cells would greatly benefit from integration with transparent and flexible polymeric substrates. Such integration requires the vacuum deposition of a thin film of titanium on the desired substrate, which is then anodized in suitable media to generate TiO2 nanotube arrays. However the challenges associated with control of Ti film morphology, nanotube array synthesis conditions, and film adhesion and transparency, have necessitated the use of substrate heating during deposition to temperatures of at least 300 degrees C and as high as 500 degrees C to generate highly ordered open-pore nanotube arrays, thus preventing the use of polymeric substrates. We report on a film growth technique that exploits atomic peening to achieve high quality transparent TiO2 nanotube arrays with lengths up to 5.1 microm at room temperature on polyimide substrates without the need for substrate heating or substrate biasing or a Kauffman ion source. The superior optical quality and uniformity of the nanotube arrays was evidenced by the high specular reflectivity and the smooth pattern of periodic interferometric fringes in the transmission spectra of the nanotube arrays, from which the wavelength-dependent effective refractive index was extracted for the air-TiO2 composite medium. A fluorescent immunoassay biosensor constructed using 5.1 microm-long transparent titania nanotube arrays (TTNAs) grown on Kapton substrates detected human cardiac troponin I at a concentration of 0.1 microg ml(-1).

Origin of thickness dependence of structural phase transition temperatures in BiFeO 3 thin films

DOE PAGES

Yang, Yongsoo; Beekman, Christianne; Siemons, Wolter; ...

2016-03-28

In this study, two structural phase transitions are investigated in highly strained BiFeO 3 thin films grown on LaAlO 3 substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects inmore » ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).« less

Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Tao, Hong; Ma, Zhibin; Yang, Guang; Wang, Haoning; Long, Hao; Zhao, Hongyang; Qin, Pingli; Fang, Guojia

2018-03-01

Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.

High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1992-05-01

High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, P. L.; Smagina, J. V.; Vlasov, D. Yu.

2011-12-23

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barriermore » 0.9 eV was obtained.« less

Sapphire substrate-induced effects in VO2 thin films grown by oxygen plasma-assisted pulsed laser deposition

NASA Astrophysics Data System (ADS)

Skuza, J. R.; Scott, D. W.; Pradhan, A. K.

2015-11-01

We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications.

Automated microbial metabolism laboratory. [design of advanced labeled release experiment based on single addition of soil and multiple sequential additions of media into test chambers

NASA Technical Reports Server (NTRS)

1974-01-01

The design and rationale of an advanced labeled release experiment based on single addition of soil and multiple sequential additions of media into each of four test chambers are outlined. The feasibility for multiple addition tests was established and various details of the methodology were studied. The four chamber battery of tests include: (1) determination of the effect of various atmospheric gases and selection of that gas which produces an optimum response; (2) determination of the effect of incubation temperature and selection of the optimum temperature for performing Martian biochemical tests; (3) sterile soil is dosed with a battery of C-14 labeled substrates and subjected to experimental temperature range; and (4) determination of the possible inhibitory effects of water on Martian organisms is performed initially by dosing with 0.01 ml and 0.5 ml of medium, respectively. A series of specifically labeled substrates are then added to obtain patterns in metabolic 14CO2 (C-14)O2 evolution.

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Frequency and Temperature Dependence of Fabrication Parameters in Polymer Dispersed Liquid Crystal Devices.

PubMed

Torres, Juan C; Vergaz, Ricardo; Barrios, David; Sánchez-Pena, José Manuel; Viñuales, Ana; Grande, Hans Jürgen; Cabañero, Germán

2014-05-02

A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed.

High-temperature crystallized thin-film PZT on thin polyimide substrates

NASA Astrophysics Data System (ADS)

Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.

2017-10-01

Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.

An Introduction to Atomic Layer Deposition with Thermal Applications

NASA Technical Reports Server (NTRS)

Dwivedi, Vivek H.

2015-01-01

Atomic Layer Deposition (ALD) is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, and metals to high aspect ratio geometries. This talk will focus on the utilization of ALD for engineering applications.

Enzymatic Hydrolysis of Cellulosic Materials to Fermentable Sugars for the Production of Ethanol

DTIC Science & Technology

1980-10-12

Pretreatment . • . . • . . . . . • . . . 19 5. Enzyme Production (Prepilot Scale) • . • ·. • • . . . . . • • • • 29 6. Saccharification (Prepilot...hour hydrolysis of 15% substrate. TASK II 1. Poplar shavings were compression mill pretreated most effectively at an initial moisture content of 12...concentration, pretreatment of.cellulose substrates, glucose syrup concentration, temperature, acidity, residence time, recovery of enzymes, fungi, glucose

Optimization of lipase-catalyzed enantioselective production of 1-phenyl 1-propanol using response surface methodology.

PubMed

Soyer, Asli; Bayraktar, Emine; Mehmetoglu, Ulku

2010-01-01

Optically active 1-phenyl 1-propanol is used as a chiral building block and synthetic intermediate in the pharmaceutical industries. In this study, the enantioselective production of 1-phenyl 1-propanol was investigated systematically using response surface methodology (RSM). Before RSM was applied, the effects of the enzyme source, the type of acyl donor, and the type of solvent on the kinetic resolution of 1-phenyl 1-propanol were studied. The best results were obtained with Candida antartica lipase (commercially available as Novozym 435), vinyl laurate as the acyl donor, and isooctane as the solvent. In the RSM, substrate concentration, molar ratio of acyl donor to the substrate, amount of enzyme, temperature, and stirring rate were chosen as independent variables. The predicted optimum conditions for a higher enantiomeric excess (ee) were as follows: substrate concentration, 233 mM; molar ratio of acyl donor to substrate, 1.5; enzyme amount, 116 mg; temperature, 47 °C; and stirring rate, 161 rpm. A verification experiment conducted at these optimized conditions for maximum ee yielded 91% for 3 hr, which is higher than the predicted value of 83%. The effect of microwave on the ee was also investigated and ee reached 87% at only 5 min.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Mobility-dependent low-frequency noise in graphene field-effect transistors.

PubMed

Zhang, Yan; Mendez, Emilio E; Du, Xu

2011-10-25

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300 and 30 K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge's relation in which the Hooge parameter α(H) is not constant but decreases monotonically with the device's mobility, with a universal dependence that is sample and temperature independent. The value of α(H) is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.

Continuous production of lipase-catalyzed biodiesel in a packed-bed reactor: optimization and enzyme reuse study.

PubMed

Chen, Hsiao-Ching; Ju, Hen-Yi; Wu, Tsung-Ta; Liu, Yung-Chuan; Lee, Chih-Chen; Chang, Cheng; Chung, Yi-Lin; Shieh, Chwen-Jen

2011-01-01

An optimal continuous production of biodiesel by methanolysis of soybean oil in a packed-bed reactor was developed using immobilized lipase (Novozym 435) as a catalyst in a tert-butanol solvent system. Response surface methodology (RSM) and Box-Behnken design were employed to evaluate the effects of reaction temperature, flow rate, and substrate molar ratio on the molar conversion of biodiesel. The results showed that flow rate and temperature have significant effects on the percentage of molar conversion. On the basis of ridge max analysis, the optimum conditions were as follows: flow rate 0.1 mL/min, temperature 52.1°C, and substrate molar ratio 1 : 4. The predicted and experimental values of molar conversion were 83.31 ± 2.07% and 82.81 ± .98%, respectively. Furthermore, the continuous process over 30 days showed no appreciable decrease in the molar conversion. The paper demonstrates the applicability of using immobilized lipase and a packed-bed reactor for continuous biodiesel synthesis.

Inorganic-polymer-derived dielectric films

DOEpatents

Brinker, C.J.; Keefer, K.D.; Lenahan, P.M.

1985-02-25

A method is disclosed for coating a substrate with a thin film of a predetermined porosity. The method comprises: depositing the thin film on the substrate from a non-gelled solution comprising at least one metal alkoxide of a polymeric network forming cation, water, an alcohol compatible with the hydrolysis and the polymerization of the metal alkoxide, and an acid or a base; prior to said depositing step, controlling the porosity and structure of said coating for a given composition of said solution exclusive of the acid or base component and the water component, by adjusting each of the water content, the pH, the temperature and the time of standing of said solution, increasing/descreasing the water content or the pH to increase/decrease the pore size of said coating, and increasing/decreasing the temperature or time of standing of said solution to increase/decrease the pore size of said coating; and curing said deposited film at a temperature effective for curing whereby there is obtained a thin film coating of a predetermined porosity on the substrate.

Apparent-contact-angle model at partial wetting and evaporation: impact of surface forces.

PubMed

Janeček, V; Nikolayev, V S

2013-01-01

This theoretical and numerical study deals with evaporation of a fluid wedge in contact with its pure vapor. The model describes a regime where the continuous wetting film is absent and the actual line of the triple gas-liquid-solid contact appears. A constant temperature higher than the saturation temperature is imposed at the solid substrate. The fluid flow is solved in the lubrication approximation. The introduction of the surface forces in the case of the partial wetting is discussed. The apparent contact angle (the gas-liquid interface slope far from the contact line) is studied numerically as a function of the substrate superheating, contact line velocity, and parameters related to the solid-fluid interaction (Young and microscopic contact angles, Hamaker constant, etc.). The dependence of the apparent contact angle on the substrate temperature is in agreement with existing approaches. For water, the apparent contact angle may be 20° larger than the Young contact angle for 1 K superheating. The effect of the surface forces on the apparent contact angle is found to be weak.

Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

NASA Astrophysics Data System (ADS)

Vajente, G.; Birney, R.; Ananyeva, A.; Angelova, S.; Asselin, R.; Baloukas, B.; Bassiri, R.; Billingsley, G.; Fejer, M. M.; Gibson, D.; Godbout, L. J.; Gustafson, E.; Heptonstall, A.; Hough, J.; MacFoy, S.; Markosyan, A.; Martin, I. W.; Martinu, L.; Murray, P. G.; Penn, S.; Roorda, S.; Rowan, S.; Schiettekatte, F.; Shink, R.; Torrie, C.; Vine, D.; Reid, S.; Adhikari, R. X.

2018-04-01

Brownian thermal noise in dielectric multilayer coatings limits the sensitivity of current and future interferometric gravitational wave detectors. In this work we explore the possibility of improving the mechanical losses of tantala, often used as the high refractive index material, by depositing it on a substrate held at elevated temperature. Promising results have been previously obtained with this technique when applied to amorphous silicon. We show that depositing tantala on a hot substrate reduced the mechanical losses of the as-deposited coating, but subsequent thermal treatments had a larger impact, as they reduced the losses to levels previously reported in the literature. We also show that the reduction in mechanical loss correlates with increased medium range order in the atomic structure of the coatings using x-ray diffraction and Raman spectroscopy. Finally, a discussion is included on our results, which shows that the elevated temperature deposition of pure tantala coatings does not appear to reduce mechanical loss in a similar way to that reported in the literature for amorphous silicon; and we suggest possible future research directions.

Diffusion-controlled growth of molecular heterostructures: fabrication of two-, one-, and zero-dimensional C(60) nanostructures on pentacene substrates.

PubMed

Breuer, Tobias; Witte, Gregor

2013-10-09

A variety of low dimensional C60 structures has been grown on supporting pentacene multilayers. By choice of substrate temperature during growth the effective diffusion length of evaporated fullerenes and their nucleation at terraces or step edges can be precisely controlled. AFM and SEM measurements show that this enables the fabrication of either 2D adlayers or solely 1D chains decorating substrate steps, while at elevated growth temperature continuous wetting of step edges is prohibited and instead the formation of separated C60 clusters pinned at the pentacene step edges occurs. Remarkably, all structures remain thermally stable at room temperature once they are formed. In addition the various fullerene structures have been overgrown by an additional pentacene capping layer. Utilizing the different probe depth of XRD and NEXAFS, we found that no contiguous pentacene film is formed on the 2D C60 structure, whereas an encapsulation of the 1D and 0D structures with uniformly upright oriented pentacene is achieved, hence allowing the fabrication of low dimensional buried organic heterostructures.

Reversible tuning of magnetocaloric Ni-Mn-Ga-Co films on ferroelectric PMN-PT substrates.

PubMed

Schleicher, Benjamin; Niemann, Robert; Schwabe, Stefan; Hühne, Ruben; Schultz, Ludwig; Nielsch, Kornelius; Fähler, Sebastian

2017-10-31

Tuning functional properties of thin caloric films by mechanical stress is currently of high interest. In particular, a controllable magnetisation or transition temperature is desired for improved usability in magnetocaloric devices. Here, we present results of epitaxial magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg 1/3 Nb 2/3 ) 0.72 Ti 0.28 O 3 (PMN-PT) substrates. Utilizing X-ray diffraction measurements, we demonstrate that the strain induced in the substrate by application of an electric field can be transferred to the thin film, resulting in a change of the lattice parameters. We examined the consequences of this strain on the magnetic properties of the thin film by temperature- and electric field-dependent measurements. We did not observe a change of martensitic transformation temperature but a reversible change of magnetisation within the austenitic state, which we attribute to the intrinsic magnetic instability of this metamagnetic Heusler alloy. We demonstrate an electric field-controlled entropy change of about 31 % of the magnetocaloric effect - without any hysteresis.

Apparent-contact-angle model at partial wetting and evaporation: Impact of surface forces

NASA Astrophysics Data System (ADS)

Janeček, V.; Nikolayev, V. S.

2013-01-01

This theoretical and numerical study deals with evaporation of a fluid wedge in contact with its pure vapor. The model describes a regime where the continuous wetting film is absent and the actual line of the triple gas-liquid-solid contact appears. A constant temperature higher than the saturation temperature is imposed at the solid substrate. The fluid flow is solved in the lubrication approximation. The introduction of the surface forces in the case of the partial wetting is discussed. The apparent contact angle (the gas-liquid interface slope far from the contact line) is studied numerically as a function of the substrate superheating, contact line velocity, and parameters related to the solid-fluid interaction (Young and microscopic contact angles, Hamaker constant, etc.). The dependence of the apparent contact angle on the substrate temperature is in agreement with existing approaches. For water, the apparent contact angle may be 20∘ larger than the Young contact angle for 1 K superheating. The effect of the surface forces on the apparent contact angle is found to be weak.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Island

NASA Technical Reports Server (NTRS)

Okamoto, Rowland H.; Chen, D.; Yamada, T.

2002-01-01

Pb islands grown on a silicon substrate transform at room temperature from the initially flattop facet geometry into an unusual ring, shape with a volume-preserving mass transport process catalysed by the tip electrical field of a scanning tunnelling microscope. The formation of such ring shape morphology results from the competing classical and quantum effects in the shape relaxation. The latter also leads to a sequential regrowth on alternating, strips of the same facet defined by the underlying substrate steps, showing for the first time the dynamical impact of the quantum size effect on the stability of a nanostructure.

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

NASA Technical Reports Server (NTRS)

Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

1995-01-01

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

Influence of graphene coating on the adsorption and tribology of Xe on Au(1 1 1) substrate.

PubMed

Zhang, Y N; Bortolani, V; Mistura, G

2014-11-05

The adsorption and tribological properties of graphene have received increasing attention for the further development of graphene-based coatings in applications. In this work, we performed first principles calculations with the inclusion of the nonlocal van der Waals correction to study the effect of graphene coating on the adsorption geometries, sliding frictions and electronic properties of Xe monolayer on the Au(1 1 1) substrate. The calculated activation energies indicate that Xe becomes movable on pure Au(1 1 1) surface at a temperature of around 30 K, whereas its motion can be activated only at a high temperature of ~50 K on graphene and on graphene-coated Au(1 1 1) substrates, in good agreement with recent experimental measurements by quartz crystal microbalance technique.

Growth and structure of Bi 0.5(Na 0.7K 0.2Li 0.1) 0.5TiO 3 thin films prepared by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Lu, Lei; Xiao, Dingquan; Lin, Dunmin; Zhang, Yongbin; Zhu, Jianguo

2009-02-01

Bi 0.5(Na 0.7K 0.2Li 0.1) 0.5TiO 3 (BNKLT) thin films were prepared on Pt/Ti/SiO 2/Si substrates by pulsed laser deposition (PLD) technique. The films prepared were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of the processing parameters, such as oxygen pressure, substrate temperature and laser power, on the crystal structure, surface morphology, roughness and deposition rates of the thin films were investigated. It was found that the substrate temperature of 600 °C and oxygen pressure of 30 Pa are the optimized technical parameters for the growth of textured film, and all the thin films prepared have granular structure, homogeneous grain size and smooth surfaces.

Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

2007-01-01

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

[Study on preparation of sagittatoside B with epimedin B converted from cellulase].

PubMed

Xu, Feng-Juan; Sun, E; Zhang, Zhen-Hai; Cui, Li; Jia, Xiao-Bin

2014-01-01

To prepare sagittatoside B with epimedin B Hydrolyzed from cellulase. With the conversion ratio as the index, the effects of pH value, temperature, reaction time, dosage of enzyme and concentration of substrates on the conversion ratio were detected. L9 (3(4)) orthogonal design was adopted to optimize the preparation process. Hydrolyzed products were identified by MS, 1H-NMR, and 13C-NMR. The results showed that the optimum reaction conditions for the enzymatic hydrolysis were that the temperature was 50 degrees C, the reaction medium was pH 5.6 acetic acid-sodium acetate buffer solution, the concentration of substrates was 20 g x L(-1), the mass ratio between enzyme and substrate was 3: 5, and the relative molecular mass of the reaction product was 646.23. NMR data proved that the product was sagittatoside B. The process is simple and reliable under mild reaction conditions, thus suitable for industrial production.

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

DOEpatents

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces

DOEpatents

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2015-07-07

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Numerical and Experimental Approaches Toward Understanding Lava Flow Heat Transfer

NASA Astrophysics Data System (ADS)

Rumpf, M.; Fagents, S. A.; Hamilton, C.; Crawford, I. A.

2013-12-01

We have performed numerical modeling and experimental studies to quantify the heat transfer from a lava flow into an underlying particulate substrate. This project was initially motivated by a desire to understand the transfer of heat from a lava flow into the lunar regolith. Ancient regolith deposits that have been protected by a lava flow may contain ancient solar wind, solar flare, and galactic cosmic ray products that can give insight into the history of our solar system, provided the records were not heated and destroyed by the overlying lava flow. In addition, lava-substrate interaction is an important aspect of lava fluid dynamics that requires consideration in lava emplacement models Our numerical model determines the depth to which the heat pulse will penetrate beneath a lava flow into the underlying substrate. Rigorous treatment of the temperature dependence of lava and substrate thermal conductivity and specific heat capacity, density, and latent heat release are imperative to an accurate model. Experiments were conducted to verify the numerical model. Experimental containers with interior dimensions of 20 x 20 x 25 cm were constructed from 1 inch thick calcium silicate sheeting. For initial experiments, boxes were packed with lunar regolith simulant (GSC-1) to a depth of 15 cm with thermocouples embedded at regular intervals. Basalt collected at Kilauea Volcano, HI, was melted in a gas forge and poured directly onto the simulant. Initial lava temperatures ranged from ~1200 to 1300 °C. The system was allowed to cool while internal temperatures were monitored by a thermocouple array and external temperatures were monitored by a Forward Looking Infrared (FLIR) video camera. Numerical simulations of the experiments elucidate the details of lava latent heat release and constrain the temperature-dependence of the thermal conductivity of the particulate substrate. The temperature-dependence of thermal conductivity of particulate material is not well known, especially at high temperatures. It is important to have this property well constrained as substrate thermal conductivity is the greatest influence on the rate of lava-substrate heat transfer. At Kilauea and Mauna Loa Volcanoes, Hawaii, and other volcanoes that threaten communities, lava may erupt over a variety of substrate materials including cool lava flows, volcanic tephra, soils, sand, and concrete. The composition, moisture, organic content, porosity, and grain size of the substrate dictate the thermophysical properties, thus affecting the transfer of heat from the lava flow into the substrate and flow mobility. Particulate substrate materials act as insulators, subduing the rate of heat transfer from the flow core. Therefore, lava that flows over a particulate substrate will maintain higher core temperatures over a longer period, enhancing flow mobility and increasing the duration and aerial coverage of the resulting flow. Lava flow prediction models should include substrate specification with temperature dependent material property definitions for an accurate understanding of flow hazards.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

Effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser-deposited La0.67Ca0.33MnOδ films

NASA Astrophysics Data System (ADS)

Horwitz, James S.; Dorsey, Paul C.; Koon, N. C.; Rubinstein, M.; Byers, J. M.; Gillespie, D. J.; Osofsky, Michael S.; Harris, V. G.; Grabowski, K. S.; Knies, D. L.; Donovan, Edward P.; Treece, Randolph E.; Chrisey, Douglas B.

1996-04-01

The effect of substrate temperature and oxygen deposition pressure on the structure and properties of thin films of LaxCa1-xMnO(delta ) has been investigated. Thin films (approximately 1000 angstroms) of La0.67Ca0.33MnO(delta ) were deposited onto LaAlO3 (100) substrates by pulsed laser deposition at a substrate temperature of 600 and 700 degree(s)C. A series of films were grown on different oxygen pressures, between 15 and 400 mTorr, which systematically changed the oxygen concentrations in the films. As-deposited films exhibited an oriented orthorhombic structure. At low oxygen deposition pressures films were preferentially (202) oriented. At high pressures deposited films had a (040) preferred orientation. A 900 degree(s)C anneal in flowing oxygen of a film deposited at low oxygen pressure resulted in a decrease in the a lattice parameter and a change in the preferred orientation from (202) to (040). Vacuum annealing at 550 degree(s)C resulted in an increase in the a lattice parameter. The resistivity as a function of temperature showed a significant variation as a function of growth conditions. The peak in the resistivity curve (Tm) varied between 73 and 150 K depending upon the growth conditions. The activation energy associated with the semiconducting phase was approximately the same for all films (approximately 100 meV).

Effect of sol temperature on structural, morphological and magnetic properties of PZT thin films on alumina substrate

NASA Astrophysics Data System (ADS)

Sreelalitha, K.; Thyagarajan, K.

2016-01-01

In the present study, we investigate the structural, morphological and magnetic properties of sol-gel spin-coated PZT thin films on alumina substrate. The morphotropic phase boundary (MPB) of PZT [Pb (Zr1-xTix)03] between the tetragonal and rhombohedral phases occurs at the Zr/Ti ratio of 52/48. At the MPB the physical properties of PZT are of far-reaching importance due to their possible crystalline phases. In this study Pb(Zr0.52Ti0.48)03 sols are prepared at room temperature and at 125 °C. The gels are coated onto alumina substrate using a spin-coating unit as two and three layers. The structural studies using XRD confirm the perovskite phase formation at an annealing temperature of 660 °C for both films. The structural parameter grain size, dislocation density, lattice parameters and strain were dependent on the sol temperature. The SEM morphology of the samples represents well-developed dense grain structure and thickness in micrometer ranges. The VSM analysis shows diamagnetic and ferromagnetic hysteresis loop. The ferromagnetism at low fields in PZT films is confirmed by studying the magnetic properties of powder made of the same gel. The effect of heat treatment on the gel preparation is observed on structural, morphological and magnetic properties of PZT thin films. The ferromagnetism in PZT can be attributed to oxygen vacancies. The squareness ratio of the films shows the application of the films as a high-density recording medium.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Formation of graphene on BN substrate by vapor deposition method and size effects on its structure

NASA Astrophysics Data System (ADS)

Giang, Nguyen Hoang; Hanh, Tran Thi Thu; Ngoc, Le Nhu; Nga, Nguyen To; Van Hoang, Vo

2018-04-01

We report MD simulation of the growth of graphene by the vapor deposition on a two-dimensional hBN substrate. The systems (containing carbon vapor and hBN substrate) are relaxed at high temperature (1500 K), and then it is cooled down to room one (300 K). Carbon atoms interact with the substrate via the Lennard-Jones potential while the interaction between carbon atoms is computed via the Tersoff potential. Depending on the size of the model, different crystalline honeycomb structures have been found. Structural properties of the graphene obtained at 300 K are studied by analyzing radial distribution functions (RDFs), coordination numbers, ring statistics, interatomic distances, bond-angle distributions and 2D visualization of atomic configurations. We find that the models containing various numbers of atoms have a honeycomb structure. Besides, differences in structural properties of graphene formed by the vapor deposition on the substrate and free standing one are found. Moreover, the size effect on the structure is significant.

Strong metal support interaction of Pt on TiO2 grown by atomic layer deposition and physical vapor deposition for fuel cell applications

NASA Astrophysics Data System (ADS)

Hansen, Robin Paul

Several roadblocks prevent the large-scale commercialization of hydrogen fuel cells, including the stability of the Pt catalysts and their substrates, as well as the high cost of Pt. This is particularly true for the cathode, which requires a higher Pt loading because of the slow kinetics of the oxygen reduction reaction (ORR). The problem with the stability of the substrate can be solved by replacing the traditional carbon support with a conductive metal oxide such as reduced TiO2, which will not easily corrode and should result in longer lasting fuel cells. In this study, Pt was deposited either by atomic layer deposition (ALD) or physical vapor deposition (PVD). The typical size of the Pt islands that were grown using these deposition techniques was 3-8 nm. One factor that can inhibit the catalytic activity of a metal catalyst on a metal oxide is the strong metal support interaction (SMSI). This is where a metal on a reducible metal oxide can be encapsulated by a layer of the metal oxide support material at elevated temperatures. The processing of materials through atomic layer deposition can exceed this temperature. The TiO2 substrates used in this study were either grown by ALD, which results in a polycrystalline anatase film, or were single-crystal rutile TiO2(110) samples prepared in ultra-high vacuum (UHV). The Pt/TiO2 samples were tested electrochemically using cyclic voltammetry (CV) to determine the level of catalytic activity. To determine the effect of the SMSI interaction on the catalytic activity of the PVD grown samples, CV was performed on samples that were annealed in high vacuum after Pt deposition. Additional characterization was performed with scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), and four point probe analysis. Platinum that was deposited by PVD was used as a standard since it is not affected by the SMSI at the low temperature of the substrate during deposition. These samples were analyzed after deposition and then annealed to higher temperatures to induce the SMSI effect. The AR-XPS results for the single crystal TiO2 substrate show that there is an increase in the Ti emission at glancing exit angle after an anneal at 150 °C, which indicates the onset of the SMSI. For the ALD TiO2 substrate, the onset of SMSI was at 380 °C. This work is believed to be the first time in which the SMSI was observed in this fashion. The CV data for the samples with PVD Pt the single crystal TiO2 substrate showed a large reduction of the hydrogen adsortion at 380 °C. For the ORR, there was a reduction in the ORR signal at 380 °C. By 750 °C, the ORR was almost completely suppressed. For the PVD Pt grown on the ALD TiO2 substrates, there was a large increase in the resistivity of the samples after exposure to the acidic electrolyte used during the CV measurements. This resulted in no CV signal for those samples. Another aspect that was significantly different for the two different substrates was the Pt growth morphology. Both the AR-XPS and SEM measurements indicate that the Pt on the single crystal TiO2 substrates grows as distinct islands. For the ALD TiO2 substrates, the Pt islands had a lower profile than the islands grown on the single crystal substrates. This morphology difference is believed to be due to the large defect density of the ALD generated TiO2 or possibly from the different chemical properties of the anatase surface. These results indicate that the ALD generated substrates are more resistant to the effects of the SMSI, but that the ALD substrates are more sensitive to surface contamination.

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-05-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Chitooligomers preparation by chitosanase produced under solid state fermentation using shrimp by-products as substrate.

PubMed

Nidheesh, T; Pal, Gaurav Kumar; Suresh, P V

2015-05-05

Solid state fermentation (SSF) conditions were statistically optimized for the production of chitosanase by Purpureocillium lilacinum CFRNT12 using shrimp by-products as substrate. Central composite design and response surface methodology were applied to evaluate the effect of variables and their optimization. Incubation temperature, incubation time, concentration of inoculum and yeast extract were found to influence the chitosanase production significantly. The R(2) value of 0.94 indicates the aptness of the model. The level of variables for optimal production of chitosanase was 32 ± 1°C temperature, 96 h incubation, 10.5% (w/v) inoculum, 1.05% (w/w) yeast extract and 65% (w/w) moisture content. The chitosanase production was found to increase from 2.34 ± 0.07 to 41.78 ± 0.73 units/g initial dry substrate after optimization. The crude chitosanase produced 4.43 mM of chitooligomers as exclusive end product from colloidal chitosan hydrolysis. These results indicate the potential of P. lilacinum CFRNT12 for the chitosanase production employing cost effective SSF using shrimp by-products. Copyright © 2014 Elsevier Ltd. All rights reserved.

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-07-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

NASA Astrophysics Data System (ADS)

Grimberg, I.; Weiss, B. Z.

1995-04-01

The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

Temperature dependence of O2 consumption; opposite effects of leptin and etomoxir on respiratory quotient in mice.

PubMed

Högberg, Helena; Engblom, Lars; Ekdahl, Asa; Lidell, Veronica; Walum, Erik; Alberts, Peteris

2006-04-01

The aims were to compare the temperature dependence of the metabolic rate in young ob/ob mice with that in mature ob/ob and db/db mice and to examine the effect on the metabolic substrate preference of leptin and etomoxir in ob/ob, C57BL/6J (wild-type), and db/db mice. In vivo oxygen consumption and carbon dioxide production were continuously measured by indirect calorimetry, and body temperature and total locomotor activity were measured by an implanted transponder. Leptin, etomoxir, or vehicle was administered intraperitoneally. The temperature dependence of the metabolic rate of mature ob/ob and db/db mice were similar to that in wild-type mice. In young 6-week-old ob/ob mice, the metabolic rate was almost doubled at 15 degrees C. Leptin (2 x 3 mg/kg) decreased the respiratory quotient (RQ) and carbon dioxide production but did not alter oxygen consumption, body temperature, or locomotor activity in ob/ob and C57BL/6J mice and had no effect in the db/db mice. Etomoxir (2 x 30 mg/kg) enhanced RQ and decreased oxygen consumption, carbon dioxide production, and body temperature in ob/ob, C57BL/6J, and db/db mice. Total locomotor activity was reduced in ob/ob and C57BL/6J mice. In young ob/ob mice, the temperature sensitivity was enhanced compared with mature mice. Leptin and etomoxir had opposite effects on metabolic substrate preference. Leptin and lowered environmental temperature increased the relative fat oxidation as indicated by decreased RQ, possibly through activation of the sympathetic nervous system.

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

NASA Astrophysics Data System (ADS)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer

NASA Astrophysics Data System (ADS)

Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

2018-04-01

Techniques of handling thin and fragile substrates in a high-temperature process are highly required for the fabrication of semiconductor devices including thin film transistors (TFTs). In our previous study, we proposed applying the surface activated bonding (SAB) method using Si intermediate layers to the bonding and debonding of glass substrates. The SAB method has successfully bonded glass substrates at room temperature, and the substrates have been debonded after heating at 450 °C, in which TFTs are fabricated on thin glass substrates for LC display devices. In this study, we conducted the bonding and debonding of Si and glass in order to understand the mechanism in the proposed process. Si substrates are also successfully bonded to glass substrates at room temperature and debonded after heating at 450 °C using the proposed bonding process. By the composition analysis of bonding interfaces, it is clarified that the absorbed water on the glass forms interfacial voids and cause the decrease in bond strength.

Colorless polyimide/organoclay nanocomposite substrates for flexible organic light-emitting devices.

PubMed

Kim, Jin-Hoe; Choi, Myeon-Chon; Kim, Hwajeong; Kim, Youngkyoo; Chang, Jin-Hae; Han, Mijeong; Kim, Il; Ha, Chang-Sik

2010-01-01

We report the preparation and application of indium tin oxide (ITO) coated fluorine-containing polyimide/organoclay nanocomposite substrate. Fluorine-containing polyimide/organoclay nanocomposite films were prepared through thermal imidization of poly(amic acid)/organoclay mixture films, whilst on which ITO thin films were coated on the films using a radio-frequency planar magnetron sputtering by varying the substrate temperature and the ITO thickness. Finally the ITO coated fluorine-containing polyimide/organoclay nanocomposite substrate was employed to make flexible organic light-emitting devices (OLED). Results showed that the lower sheet resistance was achieved when the substrate temperature was high and the ITO film was thick even though the optical transmittance was slightly lowered as the thickness increased. approximately 10 nm width ITO nanorods were found for all samples but the size of clusters with the nanorods was generally increased with the substrate temperature and the thickness. The flexible OLED made using the present substrate was quite stable even when the device was extremely bended.

Species Profiles. Life Histories and Environmental Requirements of Coastal Fishes and Invertebrates (Mid-Atlantic). Blue Crab

DTIC Science & Technology

1989-03-01

size only by Music 1979). molting (Hay 1905). Zoeal development depends on salinity and temperature, Growth and maturation proceed but development time...substrates. the effects depends on the toxicant, concentration, time exposed, salinity , tidal cycle, age and molt phase of Other Environmental Factors...Temperature .......................................................... 11 Salinity ............................................................. I11

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

NASA Technical Reports Server (NTRS)

Warner, Joseph D.; Bhasin, Kul B.; Miranda, Felix A.

1991-01-01

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Preparation of CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Yukio; Yamaguchi, Toshiyuki; Suzuki, Masayoshi

For fabricating efficient tandem solar cells, CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films have been prepared on Si(100), Si(110) and Si(111) substrates in the temperature range (R.T.{approximately}400 C) by rf sputtering. From EPMA analysis, these sputtered thin films are found to be nearly stoichiometric over the whole substrate temperature range, irrespective of the azimuth plane of the Si substrate. XPS studies showed that the compositional depth profile in these thin films is uniform. X-ray diffraction analysis indicated that all the thin films had a chalcopyrite structure. CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films were strongly oriented along the (112) plane with increasingmore » the substrate temperature, independent of the azimuth plane of the Si substrate, suggesting the larger grain growth.« less

Study of the photovoltaic effect in thin film barium titanate

NASA Technical Reports Server (NTRS)

Grannemann, W. W.; Dharmadhikari, V. S.

1982-01-01

Ferroelectric films of barium titanate were synthesized on silicon and quartz substrates, and the photoelectric effect in the structure consisting of metal deposited ferroelectric barium titanate film silicon was studied. A photovoltage with polarity that depends on the direction of the remanent polarization was observed. The deposition of BaTiO3 on silicon and fused quartz substrates was accomplished by an rf sputtering technique. A series of experiments to study the growth of ferroelectric BaTiO3 films on single crystal silicon and fused quartz substrates were conducted. The ferroelectric character in these films was found on the basis of evidence from the polarization electric field hysteresis loops, capacitance voltage and capacitance temperature techniques and from X-ray diffraction studies.

Prenucleation Induced by Crystalline Substrates

NASA Astrophysics Data System (ADS)

Men, H.; Fan, Z.

2018-04-01

Prenucleation refers to the phenomenon of atomic ordering in the liquid adjacent to the substrate/liquid interface at temperatures above the liquidus. In this paper, we have systematically investigated and holistically quantified the prenucleation phenomenon as a function of temperature and the lattice misfit between the substrate and the solid, using molecular dynamics (MD) simulations. Our results have confirmed that at temperatures above the liquidus, the atoms in the liquid at the interface may exhibit pronounced atomic ordering, manifested by atomic layering normal to the interface, in-plane atomic ordering parallel to the interface, and the formation of a 2-dimensional (2D) ordered structure (a few atomic layers in thickness) on the substrate surface. Holistic quantification of such atomic ordering at the interface has revealed that the atomic layering is independent of lattice misfit and is only slightly enhanced by reducing temperature while both in-plane atomic ordering and the formation of the 2D ordered structure are significantly enhanced by reducing the lattice misfit and/or temperature. This substrate-induced atomic ordering in the liquid may have a significant influence on the subsequent heterogeneous nucleation process.

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

Tungsten and iridium multilayered structure by DGP as ablation-resistance coatings for graphite

NASA Astrophysics Data System (ADS)

Wu, Wangping; Chen, Zhaofeng; Cheng, Han; Wang, Liangbing; Zhang, Ying

2011-06-01

Oxidation protection of carbon material under ultra-high temperature is a serious problem. In this paper, a newly designed multilayer coating of W/Ir was produced onto the graphite substrate by double glow plasma. As comparison, the Ir single-layer coating on the graphite was also prepared. The ablation property and thermal stability of the coatings were studied at 2000 °C in an oxyacetylene torch flame. Ablation tests showed that the coated graphite substrates were protected more effectively by W/Ir multilayer coating than Ir single-layer coating. Ir single-layer coating after ablation kept the integrality, although there was a poor adhesion of the Ir coating to the graphite substrate because of the thermal expansion mismatch and the non-wetting of the carbon by Ir coating. The mass loss rate of the W/Ir-coated specimen after ablation was about 1.62%. The interface of W/Ir multilayer coating and the graphite substrate exhibited good adherence no evidence of delamination after ablation. W/Ir multilayer coating could be useful for protecting graphite in high-temperature application for a short time.

Studies on modification of ZnO sol-gel spin coated on flexible substrate at low temperature: Effect of time exposure

NASA Astrophysics Data System (ADS)

Kamardin, Ili Liyana Khairunnisa; Ainuddin, Ainun Rahmahwati

2017-04-01

Transparent Conducting Oxide (TCO) Film has been chosen as flexible substrate recently in the application of a device. One of the TCO mostly used is ITO/PET substrates. Through this communication, the effect of time exposure of ZnO thin film by modified sol-gel deposited on flexible substrates was investigated. 0.75 M of NaOH and C6H8O7 were dropped directly into precursor solution right before aging process in order to modified precursor solution environment condition. x-ray diffraction pattern recorded plane (100) and (101) as preferential growth orientation. The (101) plane was selected to calculate the average crystallite. The atomic force microscopy indicated RMS value for NaOH samples increased with time exposure. Meanwhile, for C6H8O7 samples decreased with hot water treatment time exposure.

Effects of substrate-induced-strain on the electrical properties and laser induced voltages of tilted La0.67Ca0.33MnO3 thin films

NASA Astrophysics Data System (ADS)

Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang

2013-07-01

La0.67Ca0.33MnO3 thin films have been prepared on vicinal cut LaAlO3, (LaAlO3)0.3-(SrAlTaO6)0.7, and SrTiO3 (001) substrates by pulsed laser deposition. The influence of the substrate on the electrical transport properties and laser induced voltage (LIV) effect of the films was investigated. The high insulator to metal transition temperature Tp (263.6 K) and large peak voltage of LIV signal (2.328 V) were observed in the film grown on LaAlO3 substrate. The compressive strain and large Seebeck coefficient anisotropy ΔS (3.62 μV/K) induced by LaAlO3 are thought to be responsible for this result.

Colloidal chitin stained with Remazol Brilliant Blue R, a useful substrate to select chitinolytic microorganisms and to evaluate chitinases.

PubMed

Gómez Ramírez, M; Rojas Avelizapa, L I; Rojas Avelizapa, N G; Cruz Camarillo, R

2004-02-01

A simple and sensitive method based on the use of colloidal chitin stained with Remazol Brilliant Blue R (RBB) is proposed to evaluate chitinase activity. If this colloidal-stained substrate is included as a carbon source in a liquid medium, this technique allows the selection or the comparison of chitinolytic microorganisms. The colloidal substrate is proportionally solubilized and the dye released is spectrophotometrically quantified at 595 nm. The procedures used for the staining and fixing of RBB in the colloidal chitin, and a comparison with the commercial substrate chitin-azure, are presented. The influence of several physicochemical and enzymatic parameters on the release of dyes is also shown. Both stained substrates were used for studying the effect of pH, substrate concentration, temperature and time on the chitinase reaction of Bacillus thuringiensis Bt-107.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, F.S.; Nelson, A.J.

1996-01-16

A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, Kurt H.

1996-01-01

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

NASA Astrophysics Data System (ADS)

Peng, Cheng-Jien

The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could significantly improve the time -dependent dielectric breakdown (TDDB) behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping.

Methods for determining enzymatic activity comprising heating and agitation of closed volumes

DOEpatents

Thompson, David Neil; Henriksen, Emily DeCrescenzo; Reed, David William; Jensen, Jill Renee

2016-03-15

Methods for determining thermophilic enzymatic activity include heating a substrate solution in a plurality of closed volumes to a predetermined reaction temperature. Without opening the closed volumes, at least one enzyme is added, substantially simultaneously, to the closed volumes. At the predetermined reaction temperature, the closed volumes are agitated and then the activity of the at least one enzyme is determined. The methods are conducive for characterizing enzymes of high-temperature reactions, with insoluble substrates, with substrates and enzymes that do not readily intermix, and with low volumes of substrate and enzyme. Systems for characterizing the enzymes are also disclosed.

Modeling the Spray Forming of H13 Steel Tooling

NASA Astrophysics Data System (ADS)

Lin, Yaojun; McHugh, Kevin M.; Zhou, Yizhang; Lavernia, Enrique J.

2007-07-01

On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposition occurs, the substrate preheat temperature has a negligible influence on the cooling rate of the spray-formed material. On the basis of the calculated results, it is possible to generate sufficient liquid fraction during spray forming by using a high growth rate of the deposit without preheating the substrate, and the growth rate of the deposit has almost no influence on the cooling rate in the temperature region of austenite decomposition.

Growth and characterization of V2O5 nanorods deposited by spray pyrolysis at low temperatures

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai.; Mohammad, Sabah M.; Bououdina, M.

2016-07-01

Vanadium pentoxide (V2O5) nanorods were deposited by spray pyrolysis on preheated glass substrates at low temperatures. The influence of substrate temperature on the crystallization of V2O5 has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at Tsub = 300°C were orthorhombic structures with preferential along (001) direction. Formation of nanorods from substrate surface which led to the formation of films with small-sized and rod-shaped nanostructure is observed by field scanning electron microscopy. Optical transmittance in the visible range increases to reach a maximum value of about 80% for a substrate temperature of 350°C. PL spectra reveal one main broad peak centered around 540 nm with high intensity.

An Analytical Model of Joule Heating in Piezoresistive Microcantilevers

PubMed Central

Ansari, Mohd Zahid; Cho, Chongdu

2010-01-01

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever. PMID:22163433

An analytical model of joule heating in piezoresistive microcantilevers.

PubMed

Ansari, Mohd Zahid; Cho, Chongdu

2010-01-01

The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors. This work uses analytical and numerical techniques to characterise the Joule heating in 4-layer piezoresistive microcantilevers made of silicon and silicon dioxide substrates but with the same U-shaped silicon piezoresistor. A theoretical model for predicting the temperature generated due to Joule heating is developed. The commercial finite element software ANSYS Multiphysics was used to study the effect of electrical potential on temperature and deflection produced in the cantilevers. The effect of piezoresistor width on Joule heating is also studied. Results show that Joule heating strongly depends on the applied potential and width of piezoresistor and that a silicon substrate cantilever has better thermal characteristics than a silicon dioxide cantilever.

Activation energy for diamond growth from the carbon-hydrogen gas system at low substrate temperatures

NASA Astrophysics Data System (ADS)

Stiegler, J.; Lang, T.; von Kaenel, Y.; Michler, J.; Blank, E.

1997-01-01

The growth kinetics of diamond films deposited at low substrate temperatures (600-400 °C) from the carbon-hydrogen gas system have been studied. When the substrate temperature alone was varied, independently of all other process parameters in the microwave plasma reactor, an activation energy in the order of 7 kcal/mol was observed. This value did not change with different carbon concentrations in hydrogen. It is supposed that growth kinetics in this temperature range are controlled by a single chemical reaction, probably the abstraction of surface bonded hydrogen by gas phase atomic hydrogen.

The Effect of Carrier Properties on the Ballistic Processing of Sn-0.7 Cu Thick Films

NASA Astrophysics Data System (ADS)

Hille, David M.

The need for metallic films has increased since the creation of electronic components. The continued miniaturization of systems and components has led to a greater demand for both thick and thin films, especially in the technology field. Computers, hand held devices, and solar cells are a few of the multitudes of uses for these films. This thesis investigates a novel additive manufacturing process known as Ballistic Manufacturing (BM), invented at the Advanced Materials Processing Lab (AMPL) at San Diego State University. Lead free solder (Tin (Sn)-0.7%Copper (Cu)) was chosen as the testing material due to its low melting temperature. The effects of varying thermal conductivity via the change in carrier material type, the effect of raising substrate temperature, and surface finish differences were investigated. An increase in thermal conductivity resulted in an increase in film thickness and decrease in cell size. As substrate temperature was raised, film thickness decreased, while cell size decreased. Surface finish provided a proof of concept to the transfer of substrate features to the resultant film surface. Evaluation of dendritic microstructures led to relative cooling rates reflective of changes in parameters. The mechanical behavior was also investigated using tensile tests to determine stress-stain relationships and measure elastic modulus. With the current work of this thesis, and previous work by Cavero and Stewart, Ballistic Manufacturing is proven to be an alternative method in the production of metallic films.

Molecular Dynamics Simulation of Hydrogen Trapping on Sigma 5 Tungsten Grain Boundaries

NASA Astrophysics Data System (ADS)

Al-Shalash, Aws Mohammed Taha

Tungsten as a plasma facing material is the predominant contender for future Tokamak reactor environments. The interaction between the plasma particles and tungsten is crucial to be studied for successful usage and design of tungsten in the plasma facing components ensuring the reliability and longevity of the fusion reactors. The bombardment of the sigma 5 polycrystalline tungsten was modeled using the molecular dynamics simulation through the large-scale atomic/molecular massively parallel simulator (LAMMPS) code and Tersoff type interatomic potential. By simulating the operational conditions of the Tokamak reactors, the hydrogen trapping rate, implantation distribution, and bubble formation was investigated at various temperatures (300-1200 K) and various hydrogen incident energy (20-100 eV). The substrate's temperature increases the deflected H atoms, and increases the penetration depth for the ones that go through. As well, the lower temperature tungsten substrates retain more H atoms. Increasing the bombarded hydrogen's energy increases the trapping and retention rate and the depth of penetration. Another experiments were conducted to determine whether the Sigma5 grain boundary's (GB) location affects the trapping profiles in H. The findings are ranges from small effect on deflection rates at low H energies to no effect at high H energies. However, there is a considerable effect on shifting the trapping depth profile upward toward the surface when raising the GB closer to the surface. Hydrogen atoms are highly mobile on tungsten substrate, yet no bubble formation was witnessed.

Substrate temperature constrains recruitment and trail following behavior in ants.

PubMed

van Oudenhove, Louise; Boulay, Raphaël; Lenoir, Alain; Bernstein, Carlos; Cerda, Xim

2012-06-01

In many ant species, foragers use pheromones to communicate the location of resources to nestmates. Mass-recruiting species deposit long-lasting anonymous chemical trails, while group-recruiting species use temporary chemical trails. We studied how high temperature influenced the foraging behavior of a mass-recruiting species (Tapinoma nigerrimum) and a group-recruiting species (Aphaenogaster senilis) through pheromone decay. First, under controlled laboratory conditions, we examined the effect of temperature on the trail pheromone of both species. A substrate, simulating soil, marked with gaster extract was heated for 10 min. at 25°, 35°, 45°, or 55 °C and offered to workers in a choice test. Heating gaster extract reduced the trail following behavior of the mass-recruiters significantly more than that of the group-recruiters. Second, analyses of the chemicals present on the substrate indicated that most T. nigerrimum gaster secretions vanished at 25 °C, and only iridodials persisted up to 55 °C. By contrast, A. senilis secretions were less volatile and resisted better to elevated temperatures to some extent. However, at 55 °C, the only chemicals that persisted were nonadecene and nonadecane. Overall, our results suggest that the foraging behavior of the group-recruiting species A. senilis is less affected by pheromone evaporation than that of the mass-recruiting species T. nigerrimum. This group-recruiting species might, thus, be particularly adapted to environments with fluctuating temperatures.

Reconfigurable water-substrate based antennas with temperature control

NASA Astrophysics Data System (ADS)

Mobashsher, Ahmed Toaha; Abbosh, Amin

2017-06-01

We report an unexplored reconfigurable antenna development technique utilizing the concept of temperature variable electromagnetic properties of water. By applying this physical phenomena, we present highly efficient water-substrate based antennas whose operating frequencies can be continuously tuned. While taking the advantage of cost-effectiveness of liquid water, this dynamic tuning technique also alleviates the roadblocks to widespread use of reconfigurable liquid-based antennas for VHF and UHF bands. The dynamic reconfigurability is controlled merely via external thermal stimulus and does not require any physical change of the resonating structure. We demonstrate dynamic control of omnidirectional and directional antennas covering more than 14 and 12% fractional bandwidths accordingly, with more than 85% radiation efficiency. Our temperature control approach paves the intriguing way of exploring dynamic reconfigurability of water-based compact electromagnetic devices for non-static, in-motion and low-cost real-world applications.

Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.

PubMed

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

2007-06-01

The surface properties of a plastic substrate were changed by a novel surface treatment called atomic hydrogen annealing (AHA). In this method, a plastic substrate was exposed to atomic hydrogen generated by cracking hydrogen molecules on heated tungsten wire. For the substrate, surface roughness was increased and halogen elements (F and Cl) were selectively etched by AHA. AHA was useful for pretreatment before film deposition on a plastic substrate because the changes in surface state relate to adhesion improvement. It is concluded that this method is a promising technique for preparing high-performance plastic substrates at low temperatures.

Textured substrate tape and devices thereof

DOEpatents

Goyal, Amit

2006-08-08

A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

Thermophilic anaerobic digestion in compact systems: investigations by modern microbiological techniques and mathematical simulation.

PubMed

Lübken, M; Wichern, M; Letsiou, I; Kehl, O; Bischof, F; Horn, H

2007-01-01

Thermophilic anaerobic digestion in compact systems can be an economical and ecological reasonable decentralised process technique, especially for rural areas. Thermophilic process conditions are important for a sufficient removal of pathogens. The high energy demand, however, can make such systems unfavourable in terms of energy costs. This is the case when low concentrated wastewater is treated or the system is operated at low ambient temperatures. In this paper we present experimental results of a compact thermophilic anaerobic system obtained with fluorescent in situ hybridisation (FISH) analysis and mathematical simulation. The system was operated with faecal sludge for a period of 135 days and with a model substrate consisting of forage and cellulose for a period of 60 days. The change in the microbial community due to the two different substrates treated could be well observed by the FISH analysis. The Anaerobic Digestion Model no. 1 (ADM1) was used to evaluate system performance at different temperature conditions. The model was extended to contribute to decreased methanogenic activity at lower temperatures and was used to calculate energy production. A model was developed to calculate the major parts of energy consumed by the digester itself at different temperature conditions. It was demonstrated by the simulation study that a reduction of the process temperature can lead to higher net energy yield. The simulation study additionally showed that the effect of temperature on the energy yield is higher when a substrate is treated with high protein content.

Chemistry and long-term decomposition of roots of Douglas-fir grown under elevated atmospheric carbon dioxide and warming conditions.

PubMed

Chen, H; Rygiewicz, P T; Johnson, M G; Harmon, M E; Tian, H; Tang, J W

2008-01-01

Elevated atmospheric CO(2) concentrations and warming may affect the quality of litters of forest plants and their subsequent decomposition in ecosystems, thereby potentially affecting the global carbon cycle. However, few data on root tissues are available to test this feedback to the atmosphere. In this study, we used fine (diameter < or = 2 mm) and small (2-10 mm) roots of Douglas-fir (Pseudotsuga menziesii (Mirb.) Franco) seedlings that were grown for 4 yr in a 2 x 2 factorial experiment: ambient or elevated (+ 180 ppm) atmospheric CO(2) concentrations, and ambient or elevated (+3.8 degrees C) atmospheric temperature. Exposure to elevated CO(2) significantly increased water-soluble extractives concentration (%WSE), but had little effect on the concentration of N, cellulose, and lignin of roots. Elevated temperature had no effect on substrate quality except for increasing %WSE and decreasing the %lignin content of fine roots. No significant interaction was found between CO(2) and temperature treatments on substrate quality, except for %WSE of the fine roots. Short-term (< or = 9 mo) root decomposition in the field indicated that the roots from the ambient CO(2) and ambient temperature treatment had the slowest rate. However, over a longer period of incubation (9-36 mo) the influence of initial substrate quality on root decomposition diminished. Instead, the location of the field incubation sites exhibited significant control on decomposition. Roots at the warmer, low elevation site decomposed significantly faster than the ones at the cooler, high elevation site. This study indicates that short-term decomposition and long-term responses are not similar. It also suggests that increasing atmospheric CO(2) had little effect on the carbon storage of Douglas-fir old-growth forests of the Pacific Northwest.

Multivariate regulation of soil CO2 and N2 O pulse emissions from agricultural soils.

PubMed

Liang, Liyin L; Grantz, David A; Jenerette, G Darrel

2016-03-01

Climate and land-use models project increasing occurrence of high temperature and water deficit in both agricultural production systems and terrestrial ecosystems. Episodic soil wetting and subsequent drying may increase the occurrence and magnitude of pulsed biogeochemical activity, affecting carbon (C) and nitrogen (N) cycles and influencing greenhouse gas (GHG) emissions. In this study, we provide the first data to explore the responses of carbon dioxide (CO2 ) and nitrous oxide (N2 O) fluxes to (i) temperature, (ii) soil water content as percent water holding capacity (%WHC), (iii) substrate availability throughout, and (iv) multiple soil drying and rewetting (DW) events. Each of these factors and their interactions exerted effects on GHG emissions over a range of four (CO2 ) and six (N2 O) orders of magnitude. Maximal CO2 and N2 O fluxes were observed in environments combining intermediate %WHC, elevated temperature, and sufficient substrate availability. Amendments of C and N and their interactions significantly affected CO2 and N2 O fluxes and altered their temperature sensitivities (Q10 ) over successive DW cycles. C amendments significantly enhanced CO2 flux, reduced N2 O flux, and decreased the Q10 of both. N amendments had no effect on CO2 flux and increased N2 O flux, while significantly depressing the Q10 for CO2 , and having no effect on the Q10 for N2 O. The dynamics across DW cycles could be attributed to changes in soil microbial communities as the different responses to wetting events in specific group of microorganisms, to the altered substrate availabilities, or to both. The complex interactions among parameters influencing trace gas fluxes should be incorporated into next generation earth system models to improve estimation of GHG emissions. © 2015 John Wiley & Sons Ltd.

Frequency and Temperature Dependence of Fabrication Parameters in Polymer Dispersed Liquid Crystal Devices

PubMed Central

Torres, Juan C.; Vergaz, Ricardo; Barrios, David; Sánchez-Pena, José Manuel; Viñuales, Ana; Grande, Hans Jürgen; Cabañero, Germán

2014-01-01

A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed. PMID:28788632

The Effects of ph on Structural and Optical Characterization of Iron Oxide Thin Films

NASA Astrophysics Data System (ADS)

Tezel, Fatma Meydaneri; Özdemir, Osman; Kariper, I. Afşin

In this study, the iron oxide thin films have been produced by chemical bath deposition (CBD) method as a function of pH onto amorphous glass substrates. The surface images of the films were investigated with scanning electron microscope (SEM). The crystal structures, orientation of crystallization, crystallite sizes, and dislocation density i.e. structural properties of the thin films were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T%), reflectivity (R%), absorption coefficient (α), refraction index (n), extinction coefficient (k) and dielectric constant (ɛ) of the thin films were investigated depending on pH, deposition time, solution temperature, substrate temperature, thickness of the films by UV-VIS spectrometer.

Glasses and Liquids Low on the Energy Landscape Prepared by Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Dalal, Shakeel; Fakhraai, Zahra; Ediger, Mark

2014-03-01

The lower portions of the potential energy landscape for glass-forming materials such as polymers and small molecules were historically inaccessible by experiments. Physical vapor deposition is uniquely able to prepare materials in this portion of the energy landscape, with the properties of the deposited material primarily modulated by the substrate temperature. Here we report on high-throughput experiments which utilize a temperature gradient stage to enable rapid screening of vapor-deposited organic glasses. Using ellipsometry, we characterize a 100 K range of substrate temperatures in a single experiment, allowing us to rapidly determine the density, kinetic stability, fictive temperature and molecular orientation of these glasses. Their properties fall into three temperature regimes. At substrate temperatures as low as 0.97Tg, we prepare materials which are equivalent to the supercooled liquid produced by cooling the melt. Below 0.9Tg (1.16TK) the properties of materials are kinetically controlled and highly tunable. At intermediate substrate temperatures we are able to produce materials whose bulk properties match those expected for the equilibrium supercooled liquid, down to 1.16TK, but are structurally anisotropic.

Titanium disilicide formation by sputtering of titanium on heated silicon substrate

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.

1984-09-01

We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integrated

Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation

NASA Astrophysics Data System (ADS)

Mayangsari, Tirta R.; Yusup, Luchana L.; Park, Jae-Min; Blanquet, Elisabeth; Pons, Michel; Jung, Jongwan; Lee, Won-Jun

2017-06-01

We modeled and simulated the surface reaction of silicon precursor on different surfaces by thermodynamic analysis and density functional theory calculation. We considered SiH2Cl2 and argon as the silicon precursor and the carrier gas without etchant gas. First, the equilibrium composition of both gaseous and solid species was analyzed as a function of process temperature. SiCl4 is the dominant gaseous species at below 750 °C, and SiCl2 and HCl are dominant at higher temperatures, and the yield of silicon decreases with increasing temperature over 700 °C due to the etching of silicon by HCl. The yield of silicon for SiO2 substrate is lower than that for silicon substrate, especially at 1000 °C or higher. Zero deposition yield and the etching of SiO2 substrate at higher temperatures leads to selective growth on silicon substrate. Next, the adsorption and the reaction of silicon precursor was simulated on H-terminated silicon (100) substrate and on OH-terminated β-cristobalite substrate. The adsorption and reaction of a SiH2Cl2 molecule are spontaneous for both Si and SiO2 substrates. However, the energy barrier for reaction is very small (6×10-4 eV) for Si substrate, whereas the energy barrier is high (0.33 eV) for SiO2 substrate. This makes the differences in growth rate, which also supports the experimental results in literature.

Temperature distribution around thin electroconductive layers created on composite textile substrates

NASA Astrophysics Data System (ADS)

Korzeniewska, Ewa; Szczesny, Artur; Krawczyk, Andrzej; Murawski, Piotr; Mróz, Józef; Seme, Sebastian

2018-03-01

In this paper, the authors describe the distribution of temperatures around electroconductive pathways created by a physical vacuum deposition process on flexible textile substrates used in elastic electronics and textronics. Cordura material was chosen as the substrate. Silver with 99.99% purity was used as the deposited metal. This research was based on thermographic photographs of the produced samples. Analysis of the temperature field around the electroconductive layer was carried out using Image ThermaBase EU software. The analysis of the temperature distribution highlights the software's usefulness in determining the homogeneity of the created metal layer. Higher local temperatures and non-uniform distributions at the same time can negatively influence the work of the textronic system.

The effect of different temperature profiles upon the length and crystallinity of vertically-aligned multi-walled carbon nanotubes.

PubMed

Yun, Jongju; Lee, Cheesung; Zheng, Qing; Baik, Seunghyun

2012-08-01

We synthesized vertically-aligned multi-walled carbon nanotubes with an inner diameter of 1.6-7.5 nm and stack height of 80-28600 microm by chemical vapor deposition. The effects of synthesis conditions such as substrate position in the tube furnace, maximum temperature, temperature increasing rate and synthesis duration on the structure of nanotubes were investigated. It was found that slightly faster temperature increase rate resulted in significantly longer length, larger diameter and more defects of nanotubes. Structural parameters such as inner, outer diameters, wall thickness and defects were investigated using transmission electron microscopy and Raman spectroscopy.

Effects of microbial loading and sporulation temperature on atmospheric plasma inactivation of Bacillus subtilis spores

NASA Astrophysics Data System (ADS)

Deng, X. T.; Shi, J. J.; Shama, G.; Kong, M. G.

2005-10-01

Current inactivation studies of Bacillus subtilis spores using atmospheric-pressure glow discharges (APGD) do not consider two important factors, namely microbial loading at the surface of a substrate and sporulation temperature. Yet these are known to affect significantly microbial resistance to heat and hydrogen peroxide. This letter investigates effects of microbial loading and sporulation temperature on spore resistance to APGD. It is shown that microbial loading can lead to a stacking structure as a protective shield against APGD treatment and that high sporulation temperature increases spore resistance by altering core water content and cross-linked muramic acid content of B. subtilis spores.

Nanostructured Coatings with Self-Healing and Temperature Homogenization Functions for High Temperature Sliding Interfaces

DTIC Science & Technology

2010-10-01

showing the stainless steel chamber (A), the rotatable substrate holder (B), the plasma burning between substrate holder and magnetrons (C) and three...Final Report University of Leoben, Austria 3 The sputtering system consists of a cylindrical stainless steel chamber (Ø 380 x 235mm) (A) which...are used. All coatings were deposited on three different substrates: AlSI M2 high speed steel , Si (100) wafers, and Fe foil. M2 substrates which

Analytical thermal resistance model for high power double-clad fiber on rectangular plate with convective cooling at upper and lower surfaces

NASA Astrophysics Data System (ADS)

Lv, Yi; Zheng, Huai; Liu, Sheng

2018-07-01

Whether convective heat transfer on the upper surface of the substrate is used or not, the thermal resistance network models of optical fiber embedded in the substrate are established in this research. These models are applied to calculate the heat dissipation in a high power ytterbium doped double-clad fiber (YDCF) power amplifier. Firstly, the temperature values of two points on the fiber are tested when there is no convective heat transfer on the upper surface. Then, the numerical simulation is used to verify the temperature change of the fiber with the effective convective heat transfer coefficient of the lower surface heff increasing when the upper surface is subjected to three loading conditions with hu as 1, 5 and 15 W/(m2 K), respectively. The axial temperature distribution of the optical fiber is also presented at four different values for hu when heff is 30 W/(m2 K). Absolute values of the relative errors are less than 7.08%. The results show that the analytical models can accurately calculate the temperature distribution of the optical fiber when the fiber is encapsulated into the substrate. The corresponding relationship is helpful to further optimize packaging design of the fiber cooling system.

Room Temperature Ion-Beam-Induced Recrystallization and Large Scale Nanopatterning.

PubMed

Satpati, Biswarup; Ghosh, Tanmay

2015-02-01

We have studied ion-induced effects in the near-surface region of two eutectic systems. Gold and Silver nanodots on Silicon (100) substrate were prepared by thermal evaporation under high vacuum condition at room temperature (RT) and irradiated with 1.5 MeV Au2+ ions at flux ~1.25 x 10(11) ions cm-2 s-1 also at RT. These samples were characterized using cross-sectional transmission electron microscopy (XTEM) and associated techniques. We have observed that gold act as catalysis in the recrystallization process of ion-beam-induced amorphous Si at room temperature and also large mass transport up to a distance of about 60 nm into the substrate. Mass transport is much beyond the size (~ 6-20 nm) of these Au nanodots. Ag nanoparticles with diameter 15-45 nm are half-way embedded into the Si substrate and does not stimulate in recrystallization. In case of Au nanoparticles upon ion irradiation, mixed phase formed only when the local composition and transient temperature during irradiation is sufficient to cause mixing in accordance with the Au-Si stable phase diagram. Spectroscopic imaging in the scanning TEM using spatially resolved electron energy loss spectroscopy provides one of the few ways to measure the real-space nanoscale mixing.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

PubMed

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

The effects of environmental factors on daytime sandeel distribution and abundance on the Dogger Bank

NASA Astrophysics Data System (ADS)

van der Kooij, Jeroen; Scott, Beth E.; Mackinson, Steven

2008-10-01

Spring distribution and abundance of lesser sandeels during the day were linked to zooplankton densities, seabed substrate and various hydrographic factors using small scale empirical data collected in two areas on the Dogger Bank in 2004, 2005 and 2006. The results of a two-step generalized additive model (GAM) suggested that suitable seabed substrate and temperature best explain sandeel distribution (presence/absence) and that sandeel abundance (given presence) was best described by a model that included bottom temperature, difference between surface and bottom temperature and surface salinity. The current study suggests that suitable seabed substrate explains sandeel distribution in the water column. Bottom temperature and surface salinity also played an important role in explaining distribution and abundance, and we speculate that sandeels favour hydrographically dynamic areas. Contrary to our hypothesis sandeels were not strongly associated with areas of high zooplankton density. We speculate that in early spring on the western Dogger Bank plankton is still patchily distributed and that sandeels only emerge from the seabed when feeding conditions near their night-time burrowing habitat are optimal. The results also suggested that when abundance is over a threshold level, the number of sandeel schools increased rather than the schools becoming bigger. This relationship between patchiness and abundance has implications for mortality rates and hence fisheries management.

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity.

PubMed

Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun

2018-02-01

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe 2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec -1 at room temperature based on bilayer n-MoS 2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS 2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS 2 /GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, K.C.; Kodas, T.T.

1994-01-11

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Fabrication of needle-like ZnO nanorods arrays by a low-temperature seed-layer growth approach in solution

NASA Astrophysics Data System (ADS)

Zhang, Haimin; Quan, Xie; Chen, Shuo; Zhao, Huimin

2007-11-01

Uniform, large-scale, and well-aligned needle-like ZnO nanorods with good photoluminescence and photocatalysis properties on Zn substrates, have been successfully fabricated using a simple low-temperature seed-layer growth approach in solution (50 °C). The formation of ZnO seed-layer by the anodic oxidation technique (AOT) plays an important role in the subsequent growth of highly oriented ZnO nanorods arrays. Temperature also proved to be a significant factor in the growth of ZnO nanorods and had a great effect on their optical properties. X-ray diffraction (XRD) analysis, selected-area electron diffraction (SAED) pattern and high-resolution TEM (HRTEM) indicated that the needle-like ZnO nanorods were single crystal in nature and that they had grown up preferentially along the [0001] direction. The well-aligned ZnO nanorods arrays on Zn substrates exhibited strong UV emission at around 380 nm at room temperature. To investigate their potential as photocatalysts, degradation of pentachlorophenol (PCP) in aqueous solution was carried out using photocatalytic processes, with comparison to direct photolysis. After 1 h, the degradation efficiencies of PCP by direct photolysis and photocatalytic processes achieved 57% and 76% under given experimental conditions, respectively. This improved degradation efficiency of PCP illustrates that ZnO nanorods arrays on Zn substrates have good photocatalytic activity. This simple low-temperature seed-layer growth approach in solution resulted in the development of an effective and low-cost fabrication process for high-quality ZnO nanorods arrays with good optical and photocatalytic properties that can be applicable in many fields such as photocatalysis, photovoltaic cells, luminescent sensors, and photoconductive sensors.

Influence of substrate temperature on structural, morphological, optical and electrical properties of Bi-doped MnInS4 thin films prepared by nebuliser spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Kennedy, A.; Senthil Kumar, V.; Pradeev Raj, K.

2017-11-01

Bismuth (Bi)-doped manganese indium sulphide (MnInS4) thin films were deposited on heated glass substrates using an aqueous solution of MnCl2, InCl3, (NH2)2CS and BiCl3 by the common nebuliser spray pyrolysis technique. The thin films were grown at various substrate temperatures ranging from 250 to 400 °C with a constant spray time (5 min). The present work aims to study the effect of substrate temperature on the structural, optical, photoluminescence and electrical properties of the grown thin films using various techniques like X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS), UV-Vis absorption spectroscopy, photoluminescence spectra (PL) and four probe methods. The XRD pattern reveals that the Bi-doped MnInS4 thin films were polycrystalline in nature with a cubic spinel structure whose particle size varies between 8.2 and 23.5 nm. From the FE-SEM micrographs, due to the change in the substrate temperature, shapes such as spherical, needle-shaped and T-shaped grains were observed throughout the surface of the films. The energy dispersive analysis spectrum (EDS) shows the presence of Mn, In, S and Bi in the film grown at 250 °C. It is interesting to note that the structural homogeneity and crystallinity of the film is improved due to the decrease in the absorption coefficient (α) and extinction coefficient (K) with an increase in substrate temperature. Also, with an increase in the substrate temperature, the calculated band gap energy was found to decrease from 1.87 to 1.59 eV. From the PL spectra, several intense peaks corresponding to blue, green, yellow, orange and red band emissions were observed in the wavelength region of 350-650 nm. Moreover as the intensity of the peak increases with increase in the substrate temperature, the crystallinity of the material of the film greatly improves concomitant with minimum strain and defect states. From the electrical studies, the electrical conductivity increases with increase in substrate temperature and a maximum electrical conductivity of 3.73 × 10-3 Ω-1m-1 were obtained for the film prepared at 400 °C. The thickness of the films was also measured and the values ranged between 743 nm (250 °C) to 629 nm (400 °C). The high absorption coefficient (1.85 × 104 cm-1) and high transmittance of the films make them an efficient window layer for solar cell applications. Incorporation of Bismuth (Bi) into MnInS4 matrix leads to improve the optical transmittance (85%) and electrical conductivity (3.11 × 10-3 Ω-1 m-1) of the film grown at 400 °C. Other important parameters like dislocation density (δ), strain (ε), the number of crystallites per unit area (N) and lattice distortion (LD), which are commonly used to describe the structural analysis were also presented. Bi-doped MnInS4 thin films were grown by a variety of deposition methods. Among them, spray pyrolysis is an eco-friendly method because of its low cost, mass production capacity, large area coatings and minimum wastage of the source materials.

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates

NASA Astrophysics Data System (ADS)

Ludewig, P.; Reinhard, S.; Jandieri, K.; Wegele, T.; Beyer, A.; Tapfer, L.; Volz, K.; Stolz, W.

2016-03-01

High-quality, pseudomorphically strained Ga(NAsP)/(BGa)(AsP)-multiple quantum well heterostructures (MQWH) have been deposited on exactly oriented (001) Si-substrate by metal organic vapour phase epitaxy (MOVPE) in a wide temperature range between 525 °C and 700 °C. The individual atomic incorporation efficiencies, growth rates as well as nanoscale material properties have been clarified by applying detailed high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL) spectroscopy and high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) studies. An almost constant N-incorporation efficiency is obtained for a wide growth temperature range from 550 °C up to 650 °C. The P-incorporation is steadily increasing with increasing growth temperature reaching values at high temperatures in excess of the applied gas phase ratio. While the lower interface from the binary GaP- to the quaternary Ga(NAsP)-material system is very sharp, the upper interface is significantly rougher with a roughness scale of ±0.43 nm in quantum well thickness variation at a growth temperature of 525 °C. This roughness scale increases steadily with increasing growth temperature. No indication of any phase separation effects is detected in the Ga(NAsP)-material system even at the highest growth temperature of 700 °C. The obtained experimental results are briefly discussed with respect to the anticipated metastable character of the novel dilute-nitride Ga(NAsP)-material system grown lattice-matched to (001) Si-substrate.

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

PubMed

Lee, Jae-Kyu; Choi, Duck-Kyun

2012-07-01

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

NASA Astrophysics Data System (ADS)

Zhu, Q. X.; Wang, W.; Zhao, X. Q.; Li, X. M.; Wang, Y.; Luo, H. S.; Chan, H. L. W.; Zheng, R. K.

2012-05-01

Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

Process for applying a superconductive powder to a wide variety of substrates

NASA Astrophysics Data System (ADS)

Hooker, Matthew W.; Wise, Stephanie A.; Tran, Sang Q.

1992-12-01

A fine superconducting powder such as YBa2Cu3O(7-x), wherein x is less than one, is blended into a liquid mixture comprising an epoxy resin and a thinner. This liquid mixture with the blended superconducting powder is coated onto a substrate. Next, the thinner is evaporated and the remaining coating cured, resulting in a coating of cured epoxy resin having superconducting powder suspended therein. This coating exhibits the Meissner effect, i.e., it expels a magnetic flux which protects the substrate from external magnetic interference. Since the coated substrate need only be heated for evaporation and curing at relatively low temperatures compared to firing, the superconducting coating can be applied to a wide variety of different materials.

Detection of volatile organic compounds by surface enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Chang, Allan S. P.; Maiti, Amitesh; Ileri, Nazar; Bora, Mihail; Larson, Cindy C.; Britten, Jerald A.; Bond, Tiziana C.

2012-06-01

We present the detection of volatile organic compounds directly in their vapor phase by surface-enhanced Raman scattering (SERS) substrates based on lithographically-defined two-dimensional rectangular array of nanopillars. The type of nanopillars is known as the tapered pillars. For the tapered pillars, SERS enhancement arises from the nanofocusing effect due to the sharp tip on top. SERS experiments were carried out on these substrates using various concentrations of toluene vapor. The results show that SERS signal from a toluene vapor is strongly influenced by the substrate temperature, and the toluene vapor can be detected within minutes of exposing the SERS substrate to the vapor. A simple adsorption model is developed which gives results matching the experimental data. The results also show promising potential for the use of these substrates in environmental monitoring of gases and vapors.

Flow effects in a vertical CVD reactor

NASA Technical Reports Server (NTRS)

Young, G. W.; Hariharan, S. I.; Carnahan, R.

1992-01-01

A model is presented to simulate the non-Boussinesq flow in a vertical, two-dimensional, chemical vapor deposition reactor under atmospheric pressure. Temperature-dependent conductivity, mass diffusivity, viscosity models, and reactive species mass transfer to the substrate are incorporated. In the limits of small Mach number and small aspect ratio, asymptotic expressions for the flow, temperature, and species fields are developed. Soret diffusion effects are also investigated. Analytical solutions predict an inverse relationship between temperature field and concentration field due to Soret effects. This finding is consistent with numerical simulations, assisting in the understanding of the complex interactions amongst the flow, thermal, and species fields in a chemically reacting system.

Mathematical modeling of the ethanol fermentation of cashew apple juice by a flocculent yeast: the effect of initial substrate concentration and temperature.

PubMed

Pinheiro, Álvaro Daniel Teles; da Silva Pereira, Andréa; Barros, Emanuel Meneses; Antonini, Sandra Regina Ceccato; Cartaxo, Samuel Jorge Marques; Rocha, Maria Valderez Ponte; Gonçalves, Luciana Rocha B

2017-08-01

In this work, the effect of initial sugar concentration and temperature on the production of ethanol by Saccharomyces cerevisiae CCA008, a flocculent yeast, using cashew apple juice in a 1L-bioreactor was studied. The experimental results were used to develop a kinetic model relating biomass, ethanol production and total reducing sugar consumption. Monod, Andrews, Levenspiel and Ghose and Tyagi models were investigated to represent the specific growth rate without inhibition, with inhibition by substrate and with inhibition by product, respectively. Model validation was performed using a new set of experimental data obtained at 34 °C and using 100 g L -1 of initial substrate concentration. The model proposed by Ghose and Tyagi was able to accurately describe the dynamics of ethanol production by S. cerevisiae CCA008 growing on cashew apple juice, containing an initial reducing sugar concentration ranging from 70 to 170 g L -1 and temperature, from 26 to 42 °C. The model optimization was also accomplished based on the following parameters: percentage volume of ethanol per volume of solution (%V ethanol /V solution ), efficiency and reaction productivity. The optimal operational conditions were determined using response surface graphs constructed with simulated data, reaching an efficiency and a productivity of 93.5% and 5.45 g L -1  h -1 , respectively.

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Surface segregation on Fe3%Si0.04%VC(100) single crystal surfaces

NASA Astrophysics Data System (ADS)

Uebing, C.; Viefhaus, H.

1990-10-01

Surface segregation phenomena on (100) oriented single crystal surfaces of the ferritic Fe-3%Si-0.04%V-C alloy were investigated by AES and LEED. At temperatures below 635 °C vanadium and carbon cosegregation is observed after prolonged heating. At thermodynamic equilibrium the substrate surface is saturated with the binary surface compound VC. The two-dimensional VC is epitaxially arranged on the substrate surface as indicated by LEED investigations. Its structure corresponds to the (100) plane of the three-dimensional VC with rocksalt structure. Sharp above 635 °C the surface compound VC is dissolved into the bulk. At higher temperatures the substrate surface is covered with segregated silicon forming a c(2 × 2) structure. This surface phase transition is reversible. Because of the low concentration and slow diffusion of vanadium, non-equilibrium surface states are formed as intermediates upon segregation of silicon and carbon. Below 500 °C a disordered graphite layer with a characteristical asymmetrical C Auger peak is observed on the substrate surface. Above 500 °C carbon segregation leads to the formation of an ordered c(2 × 2) structure with a symmetrical C Auger peak being characteristic for carbidic or atomically adsorbed species. At increasing temperatures silicon segregation takes place leading to a c(2 × 2) structure. Between silicon and carbon site competition is effective.

Low temperature platinum atomic layer deposition on nylon-6 for highly conductive and catalytic fiber mats

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mundy, J. Zachary; Shafiefarhood, Arya; Li, Fanxing

2016-01-15

Low temperature platinum atomic layer deposition (Pt-ALD) via (methylcyclopentadienyl)trimethyl platinum and ozone (O{sub 3}) is used to produce highly conductive nonwoven nylon-6 (polyamide-6, PA-6) fiber mats, having effective conductivities as high as ∼5500–6000 S/cm with only a 6% fractional increase in mass. The authors show that an alumina ALD nucleation layer deposited at high temperature is required to promote Pt film nucleation and growth on the polymeric substrate. Fractional mass gain scales linearly with Pt-ALD cycle number while effective conductivity exhibits a nonlinear trend with cycle number, corresponding to film coalescence. Field-emission scanning electron microscopy reveals island growth mode ofmore » the Pt film at low cycle number with a coalesced film observed after 200 cycles. The metallic coating also exhibits exceptional resistance to mechanical flexing, maintaining up to 93% of unstressed conductivity after bending around cylinders with radii as small as 0.3 cm. Catalytic activity of the as-deposited Pt film is demonstrated via carbon monoxide oxidation to carbon dioxide. This novel low temperature processing allows for the inclusion of highly conductive catalytic material on a number of temperature-sensitive substrates with minimal mass gain for use in such areas as smart textiles and flexible electronics.« less

Effects of High-Temperature Treatment on the Reaction Between Sn-3%Ag-0.5%Cu Solder and Sputtered Ni-V Film on Ferrite Substrate

NASA Astrophysics Data System (ADS)

Shen, Xiaohu; Jin, Hao; Dong, Shurong; Wong, Hei; Zhou, Jian; Guo, Zhaodi; Wang, Demiao

2012-11-01

We have demonstrated a novel sputtering method for lead-free thin metal films on ferrite substrates for surface-mount inductor applications. In a surface-mounting process, the cladding of enameled wire needs to be burnt off at high temperature, which requires the devices to withstand a high-temperature reliability test at 420°C for 10 s. There are no reports that a sputtered film of thickness less than 6 μm can withstand this test. In this work, we used Ag/Ni-7 wt.%V double metal layers for the metallization. The dissolution of Ni-7 wt.%V in Sn-3%Ag-0.5%Cu lead-free solder at various temperatures was studied in detail. Scanning electron microscopy with energy-dispersive x-ray spectroscopy was used to investigate the interfacial reaction between the sputtered films and the solder. The intermetallic compounds are mainly (Cu,Ni)6Sn5 at 250°C; however, (Ni,Cu)3Sn4 becomes the predominant composition at 420°C. In addition, although outdiffusion of V atoms from the Ni-V layer was observed, its effect on the intermetallic compound (IMC) was insignificant. We further confirmed that the proposed metallization is able to pass the aforementioned high-temperature reliability test.

The effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

NASA Astrophysics Data System (ADS)

Wang, Cai-Feng; Li, Qing-Shan; Hu, Bo; Li, Wei-Bing

2009-06-01

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I-V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

Lava-substrate heat transfer: Laboratory experiments and thermodynamic modeling

NASA Astrophysics Data System (ADS)

Rumpf, M.; Fagents, S. A.; Hamilton, C. W.; Wright, R.; Crawford, I.

2012-12-01

We have performed laboratory experiments and numerical modeling to investigate the heat transfer from a lava flow into various substrate materials, focusing on the effects of the differing thermophysical properties of substrate materials. Initial motivation for this project developed from the desire to understand the loss of solar wind volatiles embedded in lunar regolith deposits that were subsequently covered by a lava flow. The Moon lacks a significant atmosphere and magnetosphere, leaving the surface regolith exposed to bombardment by solar flare and solar wind particles, and by the cosmogenic products of galactic cosmic rays. Preservation of particle-rich regolith deposits may have occurred by the emplacement of an active lava flow on top of the regolith layer, provided the embedded particles survive heating by the lava. During future expeditions to the lunar surface, ancient regolith deposits could be sampled through surface drilling to extract the extra-lunar particles, revealing a history of the solar activity and galactic events not available on the Earth. This project also has important implications for terrestrial lava flows, particularly in the prediction of lava flow hazards. Lava erupted on Earth may be emplaced on various substrates, including solid lava rock, volcanic tephra, sands, soils, etc. The composition, grain size, consolidation, moisture content, etc. of these materials will vary greatly and have different effects on the cooling of the flow. Accounting for specific properties of the substrate could be an important improvement in lava flow models We have performed laboratory experiments in collaboration with the Department of Art and Art History at the University of Hawaii at Manoa in which ~5-6 kg of basalt, collected at Kilauea Volcano, Hawaii, is melted to ~1200 °C. The lava is poured into a device constructed of calcium silicate sheeting that has been filled with a solid or particulate substrate material and embedded with thermocouples. Internal temperatures are monitored by the thermocouple array, while external temperatures are monitored by a Forward Looking Infrared Radiometer (FLIR) video camera. The experimental data thus describe the cooling rates of the system, and reveal the release of latent heat of crystallization within the cooling lava. These experiments have been conducted in conjunction with numerical simulations of the heat transfer from a lava flow into various substrates, to quantify the depth reached by the heat pulse as it penetrates the substrate. Models include material-specific, temperature-dependent thermophysical properties, including thermal conductivity, specific heat capacity, and latent heat of crystallization. We find that particulate materials, such as lunar regolith, sand, and soils will be heated to depths shallower than solid materials. In addition, the particulate materials will act as insulators, shielding the lava flow from basal cooling and maintaining high temperatures in the flow core. These results suggest that lava flows emplaced on a dry particulate terrain will remain above solidus for a longer duration, allowing the lava to flow further than when emplaced on a solid substrate.

Distributed Capacitive Sensor for Sample Mass Measurement

NASA Technical Reports Server (NTRS)

Toda, Risaku; McKinney, Colin; Jackson, Shannon P.; Mojarradi, Mohammad; Manohara, Harish; Trebi-Ollennu, Ashitey

2011-01-01

Previous robotic sample return missions lacked in situ sample verification/ quantity measurement instruments. Therefore, the outcome of the mission remained unclear until spacecraft return. In situ sample verification systems such as this Distributed Capacitive (DisC) sensor would enable an unmanned spacecraft system to re-attempt the sample acquisition procedures until the capture of desired sample quantity is positively confirmed, thereby maximizing the prospect for scientific reward. The DisC device contains a 10-cm-diameter pressure-sensitive elastic membrane placed at the bottom of a sample canister. The membrane deforms under the weight of accumulating planetary sample. The membrane is positioned in close proximity to an opposing rigid substrate with a narrow gap. The deformation of the membrane makes the gap narrower, resulting in increased capacitance between the two parallel plates (elastic membrane and rigid substrate). C-V conversion circuits on a nearby PCB (printed circuit board) provide capacitance readout via LVDS (low-voltage differential signaling) interface. The capacitance method was chosen over other potential approaches such as the piezoelectric method because of its inherent temperature stability advantage. A reference capacitor and temperature sensor are embedded in the system to compensate for temperature effects. The pressure-sensitive membranes are aluminum 6061, stainless steel (SUS) 403, and metal-coated polyimide plates. The thicknesses of these membranes range from 250 to 500 m. The rigid substrate is made with a 1- to 2-mm-thick wafer of one of the following materials depending on the application requirements glass, silicon, polyimide, PCB substrate. The glass substrate is fabricated by a microelectromechanical systems (MEMS) fabrication approach. Several concentric electrode patterns are printed on the substrate. The initial gap between the two plates, 100 m, is defined by a silicon spacer ring that is anodically bonded to the glass substrate. The fabricated proof-of-concept devices have successfully demonstrated tens to hundreds of picofarads of capacitance change when a simulated sample (100 g to 500 g) is placed on the membrane.

PVD coating for optical applications on temperature-resistant thermoplastics

NASA Astrophysics Data System (ADS)

Munzert, Peter; Schulz, Ulrike; Kaiser, Norbert

2004-02-01

The performance of the high temperature resistant polymers Pleximid, APEC and Ultrason as substrate materials in plasma-assisted physical vapor deposition processes was studied and compared with well-known thermoplastics for optical applications. Different effects of UV irradiation and plasma exposure on the polymers' optical features, surface energy and adhesion properties for oxide layers, typically used for interference multilayer coatings, are shown.

Capacity of a nickel hydrogen boilerplate cell as a function of temperature

NASA Technical Reports Server (NTRS)

Rodgers, H. H.; Dalton, P. J.; Tinker, L. A.

1981-01-01

An evaluation of the components was conducted with special emphasis on positive electrodes. Electrochemically impregnated positive electrodes were used which were made on a slurry plaque by using a perforated steel substrate. The capacity of the test cell was consistent with the loading level used and the effect of temperature on capacity seems to depend on the cobalt level.

Dynamic hyperfiltration membranes for high-temperature spacecraft wash water recycle

NASA Technical Reports Server (NTRS)

Gaddis, J. L.; Brandon, C. A.

1978-01-01

The effect of operating parameters on the performance of the hyperfiltration membrane when operating on washwater was examined. The parameters were pressure, temperature, velocity, and concentration. Data taken included rejections of organic materials, ammonia, urea, and an assortment of ions. The membrane used was a dual layer, polyacrylic acid over zirconium oxide, deposited in situ on a porcelain ceramic substrate.

Control of spectral transmission enhancement properties of random anti-reflecting surface structures fabricated using gold masking

NASA Astrophysics Data System (ADS)

Peltier, Abigail; Sapkota, Gopal; Potter, Matthew; Busse, Lynda E.; Frantz, Jesse A.; Shaw, L. Brandon; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.; Poutous, Menelaos K.

2017-02-01

Random anti-reflecting subwavelength surface structures (rARSS) have been shown to suppress Fresnel reflection and scatter from optical surfaces. The structures effectively function as a gradient-refractive-index at the substrate boundary, and the spectral transmission properties of the boundary have been shown to depend on the structure's statistical properties (diameter, height, and density.) We fabricated rARSS on fused silica substrates using gold masking. A thin layer of gold was deposited on the surface of the substrate and then subjected to a rapid thermal annealing (RTA) process at various temperatures. This RTA process resulted in the formation of gold "islands" on the surface of the substrate, which then acted as a mask while the substrate was dry etched in a reactive ion etching (RIE) process. The plasma etch yielded a fused silica surface covered with randomly arranged "rods" that act as the anti-reflective layer. We present data relating the physical characteristics of the gold "island" statistical populations, and the resulting rARSS "rod" population, as well as, optical scattering losses and spectral transmission properties of the final surfaces. We focus on comparing results between samples processed at different RTA temperatures, as well as samples fabricated without undergoing RTA, to relate fabrication process statistics to transmission enhancement values.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Optimization of physicochemical characteristics of a lithium anode interface for high-efficiency cycling: an effect of electrolyte temperature

NASA Astrophysics Data System (ADS)

Ishikawa, Masashi; Tasaka, Yuko; Yoshimoto, Nobuko; Morita, Masayuki

Precycling of lithium (Li) metal on a nickel substrate at a low-temperature (-20°C) in propylene carbonate (PC) mixed with dimethyl carbonate (DMC) and Li hexafluorophosphate (LiPF 6) (LiPF 6-PC/DMC) enhanced Li cycleability in the subsequent cycles at a room temperature (25°C). In LiPF 6-PC/DMC, not only the low-temperature precycling in the initial 10 cycles was effective in the improvement of Li cycle life but also the first low-temperature Li deposition followed by room temperature cycling enhanced the Li cycle life. Such a precycling effect was observed with various current densities at the initial Li deposition and the subsequent cycling. When the current density of the cycling was high, improved cycling efficiency was observed and the efficiency of the Li electrode undergoing the precycling was close to that at a constant temperature of -20°C.

Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

PubMed

Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

2011-05-01

The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

Palm-based medium-and-long-chain triacylglycerol (P-MLCT): production via enzymatic interesterification and optimization using response surface methodology (RSM).

PubMed

Lee, Yee-Ying; Tang, Teck-Kim; Phuah, Eng-Tong; Karim, Nur Azwani Ab; Alwi, Siti Maslina Mohd; Lai, Oi-Ming

2015-02-01

Structured lipid such as medium-and long-chain triacylglycerol (MLCT) is claimed to be able to suppress body fat accumulation and be used to manage obesity. Response surface methodology (RSM) with four factors and three levels (+1,0,-1) faced centered composite design (FCCD) was employed for optimization of the enzymatic interesterification conditions of palm-based MLCT (P-MLCT) production. The effect of the four variables namely: substrate ratio palm kernel oil: palm oil, PKO:PO (40:60-100:0 w/w), temperature (50-70 °C), reaction time (0.5-7.5 h) and enzyme load (5-15 % w/w) on the P-MLCT yield (%) and by products (%) produced were investigated. The responses were determined via acylglycerol composition obtained from high performance liquid chromatography. Well-fitted models were successfully established for both responses: P-MLCT yield (R (2) = 0.9979) and by-products (R (2) = 0.9892). The P-MLCT yield was significantly (P < 0.05) affected by substrate ratio, reaction time and reaction temperature but not enzyme load (P > 0.05). Substrate ratio PKO: PO (100:0 w/w) gave the highest yield of P-MLCT (61 %). Nonetheless, substrate ratio of PKO: PO (90:10w/w) was chosen to improve the fatty acid composition of the P-MLCT. The optimized conditions for substrate ratio PKO: PO (90:10 w/w) was 7.26 h, 50 °C and 5 % (w/w) Lipozyme TLIM lipase, which managed to give 60 % yields of P-MLCT. Up scaled results in stirred tank batch reactor gave similar yields as lab scale. A 20 % increase in P-MLCT yield was obtained via RSM. The effect of enzymatic interesterification on the physicochemical properties of PKO:PO (90:10 w/w) were also studied. Thermoprofile showed that the P-MLCT oil melted below body temperature of 37 °C.

The Effect of Deposition Conditions on Adhesion Strength of Ti and Ti6Al4V Cold Spray Splats

NASA Astrophysics Data System (ADS)

Goldbaum, Dina; Shockley, J. Michael; Chromik, Richard R.; Rezaeian, Ahmad; Yue, Stephen; Legoux, Jean-Gabriel; Irissou, Eric

2012-03-01

Cold spray is a complex process where many parameters have to be considered in order to achieve optimized material deposition and properties. In the cold spray process, deposition velocity influences the degree of material deformation and material adhesion. While most materials can be easily deposited at relatively low deposition velocity (<700 m/s), this is not the case for high yield strength materials like Ti and its alloys. In the present study, we evaluate the effects of deposition velocity, powder size, particle position in the gas jet, gas temperature, and substrate temperature on the adhesion strength of cold spayed Ti and Ti6Al4V splats. A micromechanical test technique was used to shear individual splats of Ti or Ti6Al4V and measure their adhesion strength. The splats were deposited onto Ti or Ti6Al4V substrates over a range of deposition conditions with either nitrogen or helium as the propelling gas. The splat adhesion testing coupled with microstructural characterization was used to define the strength, the type and the continuity of the bonded interface between splat and substrate material. The results demonstrated that optimization of spray conditions makes it possible to obtain splats with continuous bonding along the splat/substrate interface and measured adhesion strengths approaching the shear strength of bulk material. The parameters shown to improve the splat adhesion included the increase of the splat deposition velocity well above the critical deposition velocity of the tested material, increase in the temperature of both powder and the substrate material, decrease in the powder size, and optimization of the flow dynamics for the cold spray gun nozzle. Through comparisons to the literature, the adhesion strength of Ti splats measured with the splat adhesion technique correlated well with the cohesion strength of Ti coatings deposited under similar conditions and measured with tubular coating tensile (TCT) test.

Studies on Various Functional Properties of Titania Thin Film Developed on Glazed Ceramic Wall Tiles

NASA Astrophysics Data System (ADS)

Anil, Asha; Darshana R, Bangoria; Misra, S. N.

A sol-gel based TiO2 thin film was applied on glazed wall tiles for studying its various functional properties. Thin film was deposited by spin coating on the substrate and subjected to curing at different temperatures such as 600°C, 650, 700°C, 750°C and 800°C with 10 minutes soaking. The gel powder was characterized by FTIR, DTA/TG and XRD. Microstructure of thin film was analyzed by FESEM and EDX. Surface properties of the coatings such as gloss, colour difference, stain resistance, mineral hardness and wettability were extensively studied. The antibacterial activity of the surface of coated substrate against E. coli was also examined. The durability of the coated substrate in comparison to the uncoated was tested against alkali in accordance with ISO: 10545 (Part 13):1995 standard. FESEM images showed that thin films are dense and homogeneous. Coated substrates after firing results in lustre with high gloss, which increased from 330 to 420 GU as the curing temperature increases compared to that of uncoated one (72 GU). Coated substrate cured at 800°C shows higher mineral hardness (5 Mohs’) compared to uncoated one (4 Mohs’) and films cured at all temperatures showed stain resistance. The experimental results showed that the resistance towards alkali attack increase with increase in curing temperature and alkali resistance of sample cured at 800 °C was found to be superior compared to uncoated substrate. Contact angle of water on coated surface of substrates decreased with increase in temperature. Bacterial reduction percentages of the coated surface was 97% for sample cured at 700°C and it decreased from 97% to 87% as the curing temperature increased to 800 °C when treated with E. coli bacteria.

Structural Studies of the Initial Stages of Fluoride Epitaxy on Silicon and GERMANIUM(111)

NASA Astrophysics Data System (ADS)

Denlinger, Jonathan David

The epitaxial growth of ionic insulators on semiconductor substrates is of interest due to fundamental issues of interface bonding and structure as well as to potential technological applications. The initial stages of Group IIa fluoride insulator growth on (111) Si and Ge substrates by molecular beam epitaxy are studied with the in situ combination of X-ray Photoelectron Spectroscopy (XPS) and Diffraction (XPD). While XPS probes the electronic structure, XPD reveals atomic structure. In addition, low energy electron diffraction (LEED) is used to probe surface order and a separate study using X-ray standing wave (XSW) fluorescence reveals interface cation bonding sites. Following the formation of a chemically-reacted interface layer in CaF_2 epitaxy on Si(111), the morphology of the subsequent bulk layers is found to be dependent on substrate temperature and incident flux rate. At temperatures >=600 ^circC a transition from three -dimensional island formation at low flux to laminar growth at higher flux is observed with bulk- and interface-resolved XPD. At lower substrate temperatures, laminar growth is observed at all fluxes, but with different bulk nucleation behavior due to changes in the stoichiometry of the interface layer. This new observation of kinetic effects on the initial nucleation in CaF_2 epitaxy has important ramifications for the formation of thicker heterostructures for scientific or device applications. XPS and XPD are also used to identify for the first time, surface core-level species of Ca and F, and a secondary interface-shifted F Auger component arising from a second-layer site directly above interface-layer Ca atoms. The effects of lattice mismatch (from -3% to 8%) are investigated with various growths of Ca_{rm x}Sr _{rm 1-x}F_2 on Si and Ge (111) substrates. Triangulation of (111) and (220) XSW indicates a predominance of 3-fold hollow Sr bonding sites coexisting with 4-fold top sites for monolayers of SrF_2 on Si. XSW and LEED reveal a lateral discommensuration of the overlayer for lattice mismatches of >5% relative to the substrate. XPD also reveals a transition from single - to mixed-domains of overlayer crystallographic orientation for mismatches >=3.5%.

Superconducting articles of manufacture and method of producing same

DOEpatents

Newkirk, Lawrence R.; Valencia, Flavio A.

1980-01-01

Bulk coatings of Nb.sub.3 Ge with high superconducting transition temperatures bonded to metallic substrates and a chemical vapor deposition method for producing such coatings on metallic substrates are disclosed. In accordance with the method, a Nb.sub.3 Ge coating having a transition temperature in excess of 21.5 K may be tightly bonded to a copper substrate.

Low-cost and low maintenance preservation of Agaricus brasiliensis cultures.

PubMed

Maia, Scheila C; Toledo, Rômulo C C; Almeida, Ana Paula M M; da Silva, Romildo; Rinker, Danny Lee; Dias, Eustáquio S

2012-06-01

Agaricus brasiliensis cultures quickly lose viability when stored at cool temperatures, even for a short period of time. We evaluated several low-cost preservation methods using varied substrates, preservation solutions, and storage temperatures. Agaricus brasiliensis was intolerant to freezing temperatures, making liquid nitrogen use and deep-freezing methods impossible for its preservation. The best preservation conditions for the A. brasiliensis CS1 strain tested in this study were obtained by using rice as substrate and water as preservation solution, with storage at room temperature or when using soil, mushroom cultivation compost, or rice and stored at 10 °C without preservation solution. Those cultures that were reactivated showed the same productivity attributes as the control. In addition, no effect on productivity or biological efficiency was observed through successive subculturing of the strain (CS1). Parboiled rice was successfully used for other A. brasiliensis strains (CS2, CS5, CS7, CS9, and CS10), and also for Pleurotus ostreatus, P. sajor-caju, and Lentinula edodes.

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Nisha, E-mail: prakasnisha@gmail.com; Barvat, Arun; Anand, Kritika

2016-05-23

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaNmore » films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.« less

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Water Drop Evaporation on Mushroom-like Superhydrophobic Surfaces: Temperature Effects.

PubMed

do Nascimento, Rodney Marcelo; Cottin-Bizonne, Cécile; Pirat, Christophe; Ramos, Stella M M

2016-03-01

We report on experiments of drop evaporation on heated superhydrophobic surfaces decorated with micrometer-sized mushroom-like pillars. We analyze the influence of two parameters on the evaporation dynamics: the solid-liquid fraction and the substrate temperature, ranging between 30 and 80 °C. In the different configurations investigated, the drop evaporation appears to be controlled by the contact line dynamics (pinned or moving). The experimental results show that (i) in the pinned regime, the depinning angles increase with decreasing contact fraction and the substrate heating promotes the contact line depinning and (ii) in the moving regime, the droplet motion is described by periodic stick-slip events and contact-angle oscillations. These features are highly smoothed at the highest temperatures, with two possible mechanisms suggested to explain such a behavior, a reduction in the elasticity of the triple line and a decrease in the depinning energy barriers. For all surfaces, the observed remarkable stability of the "fakir" state to the temperature is attributed to the re-entrant micropillar curvature that prevents surface imbibition.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

NASA Astrophysics Data System (ADS)

Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

2004-03-01

(Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

DOEpatents

Carlisle, John A [Plainfield, IL; Gruen, Dieter M [Downers Grove, IL; Auciello, Orlando [Bolingbrook, IL; Xiao, Xingcheng [Woodridge, IL

2009-07-07

A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films.

PubMed

Mihailescu, Cristian N; Symeou, Elli; Svoukis, Efthymios; Negrea, Raluca F; Ghica, Corneliu; Teodorescu, Valentin; Tanase, Liviu C; Negrila, Catalin; Giapintzakis, John

2018-04-25

Controlling the semiconductor-to-metal transition temperature in epitaxial VO 2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO 2 epitaxial thin films grown on TiO 2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V 4+ -V 4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO 2 /TiO 2 multilayer structures.

Optimal Substrate Preheating Model for Thermal Spray Deposition of Thermosets onto Polymer Matrix Composites

NASA Technical Reports Server (NTRS)

Ivosevic, M.; Knight, R.; Kalidindi, S. R.; Palmese, G. R.; Tsurikov, A.; Sutter, J. K.

2003-01-01

High velocity oxy-fuel (HVOF) sprayed, functionally graded polyimide/WC-Co composite coatings on polymer matrix composites (PMC's) are being investigated for applications in turbine engine technologies. This requires that the polyimide, used as the matrix material, be fully crosslinked during deposition in order to maximize its engineering properties. The rapid heating and cooling nature of the HVOF spray process and the high heat flux through the coating into the substrate typically do not allow sufficient time at temperature for curing of the thermoset. It was hypothesized that external substrate preheating might enhance the deposition behavior and curing reaction during the thermal spraying of polyimide thermosets. A simple analytical process model for the deposition of thermosetting polyimide onto polymer matrix composites by HVOF thermal spray technology has been developed. The model incorporates various heat transfer mechanisms and enables surface temperature profiles of the coating to be simulated, primarily as a function of substrate preheating temperature. Four cases were modeled: (i) no substrate preheating; (ii) substrates electrically preheated from the rear; (iii) substrates preheated by hot air from the front face; and (iv) substrates electrically preheated from the rear and by hot air from the front.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, K.H.

1996-04-16

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs. 1 fig.