Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Low-Temperature Growth of Amorphous Silicon Films and Direct Fabrication of Solar Cells on Flexible Polyimide and Photo-Paper Substrates

NASA Astrophysics Data System (ADS)

Madaka, Ramakrishna; Kanneboina, Venkanna; Agarwal, Pratima

2018-05-01

Direct deposition of hydrogenated amorphous silicon (a-Si:H) thin films and fabrication of solar cells on polyimide (PI) and photo-paper (PP) substrates using a rf-plasma-enhanced chemical vapor deposition technique is reported. Intrinsic amorphous silicon films were deposited on PI and PP substrates by varying the substrate temperature (T s) over 70-150°C to optimize the deposition parameters for best quality films. The films deposited on both PI and PP substrates at a temperature as low as 70°C showed a photosensitivity (σ ph/σ d) of nearly 4 orders of magnitude which increased to 5-6 orders of magnitude when the substrate temperature was increased to 130-150°C. The increase in σ ph/σ d is due to the presence of a few nanometer-sized crystallites embedded in the film. Solar cells (n-i-p) were fabricated directly on PI, PP and Corning 1737 glass (Corning) at 150°C for different thicknesses of an intrinsic amorphous silicon layer (i-layer). With the increase in i-layer thickness from 330 nm to 700 nm, the solar cell efficiency was found to increase from 3.81% to 5.02% on the Corning substrate whereas on the flexible PI substrate an increase from 3.38% to 4.38% was observed. On the other hand, in the case of cells on PP, the i-layer thickness was varied from 200 nm to 700 nm and the best cell efficiency 1.54% was obtained for the 200-nm-thick i-layer. The fabrication of a-Si (n-i-p) solar cells on photo-paper is presented for the first time.

Electrical properties of multilayer (DLC-TiC) films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Alawajji, Raad A.; Kannarpady, Ganesh K.; Nima, Zeid A.; Kelly, Nigel; Watanabe, Fumiya; Biris, Alexandru S.

2018-04-01

In this work, pulsed laser deposition was used to produce a multilayer diamond like carbon (ML (DLC-TiC)) thin film. The ML (DLC-TiC) films were deposited on Si (100) and glass substrates at various substrate temperatures in the range of 20-450 °C. Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy were utilized to characterize the prepared films. Raman analysis revealed that as the substrate temperature increased, the G-peak position shifted to a higher raman shift and the full width at half maximum of the G and D bands decreased. XPS analysis indicated a decrease in sp3/sp2 ratio and an increase in Ti-C bond intensity when the substrate temperature was increased. Additionally, the surface roughness of ML (DLC-TiC) filmswas affected by the type and temperature of the substrate. The electrical measurement results indicated that the electrical resistivity of the ML (DLC-TiC) film deposited on Si and glass substrates showed the same behavior-the resistivity decreased when substrate temperature increased. Furthermore, the ML (DLC-TiC) films deposited on silicon showed lower electrical resistivity, dropping from 8.39E-4 Ω-cm to 5.00E-4 Ω-cm, and, similarly, the films on the glass substrate displayed a drop in electrical resistivity from 1.8E-2 Ω-cm to 1.2E-3 Ω-cm. These enhanced electrical properties indicate that the ML (DLC-TiC) films have widespread potential as transducers for biosensors in biological research; electrochemical electrodes, because these films can be chemically modified; biocompatible coatings for medicals tools; and more.

Adaption of a microwave plasma source for low temperature diamond deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulczynski, M.; Reinhard, D.K.; Asmussen, J.

1996-12-31

This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substratemore » heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.« less

The effect of heat treatment on superhydrophilicity of TiO2 nano thin films

NASA Astrophysics Data System (ADS)

Ashkarran, A. A.; Mohammadizadeh, M. R.

2007-11-01

TiO2 thin films were synthesized by the sol-gel method and spin coating process. The calcination temperature was changed from 100 to 550°C. XRD patterns show increasing the content of polycrystalline anatase phase with increasing the calcination temperature. The AFM results indicate granular morphology of the films, which particle size changes from 22 to 166nm by increasing the calcination temperature. The RBS, EDX and Raman spectroscopy of the films show the ratio of Ti:O ~0.5, and diffusion of sodium ions from substrate into the layer, by increasing the calcination temperature. The UV-vis spectroscopy of the films indicates a red shift by increasing the calcination temperature. The contact angle meter experiment shows that superhydrophilicity of the films depends on the formation of anatase crystal structure and diffused sodium content from substrate to the layer. The best hydrophilicity property was observed at 450°C calcination temperature, where the film is converted to a superhydrophilic surface after 10min under 2mW/cm2 UV irradiation. Water droplet on TiO2 thin film on Si(111), Si(100), and quartz substrates is spread to smaller angles rather than glass and polycrystalline Si substrates under UV irradiation.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

2015-09-01

The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

Structural and magnetic properties of Ni nanofilms on Ge(001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bocirnea, Amelia Elena; Costescu, Ruxandra Maria; Pasuk, Iuliana; Lungu, George Adrian; Teodorescu, Cristian Mihail

2017-12-01

Ni films of 20 nm nominal thickness were grown on Ge(001) substrates by molecular beam epitaxy at several different temperatures from room temperature up to 400 °C. X-ray diffraction and X-ray photoelectron spectroscopy reveal the nucleation of Ni-Ge compounds (NiGe, Ni2Ge, Ni5Ge2) as well as a departure from the fcc Ni structure exhibited by the films at and beyond a temperature of 100 °C. The binding energy of the Ni 2p peak increases from the RT value (852.7 eV) by 0.5-1.1 eV for the Ni/Ge(001) samples, while the Ge 2p binding energy changes by 0.6-0.7 eV after Ni growth compared to a clean Ge(001) substrate (there is only a ±0.15 eV shift among the samples grown on substrates at higher temperatures). By increasing substrate temperature, we obtained higher intermixing of Ni and Ge, but rather than both Ni and Ge interdiffusing, we find that Ni diffuses further into the germanium with higher substrate temperature, forming increasingly Ni-rich Ni-Ge compounds diluted into the Ge matrix. Based on Magneto-optic Kerr Effect measurements, Ni/Ge(001) grown on substrates at 100 and 200 °C does not exhibit a hysteresis loop, while the samples on 300 and 400 °C substrates show magnetic behavior, which we attribute to the magnetic character of hexagonal Ni5Ge2 (which is determined here for the first time to be a ferromagnetic phase).

Temperature-dependent optical constants of highly transparent solids determined by the combined double optical pathlength transmission-ellipsometry method.

PubMed

Li, X C; Wang, C C; Zhao, J M; Liu, L H

2018-02-10

The optical constants of five highly transparent substrates (polycrystalline BaF 2 , CaF 2 , MgF 2 , ZnSe, and ZnS) were experimentally determined based on a combined technique using both the double optical pathlength transmission method and the ellipsometry method within temperature range 20°C-350°C in the ultraviolet-infrared region (0.2-20 μm). The results show that the refractive index spectra of polycrystalline BaF 2 , CaF 2 , and MgF 2 are similar, but differ from that of polycrystalline ZnSe and ZnS. The thermo-optic coefficient of these highly transparent substrates increases with increasing temperature. The absorption indices show a significant temperature-dependent behavior, which increases with increasing temperature from 20°C to 350°C over the transparent region. For the sake of application, the fitted formulas of the refractive index of the five highly transparent substrates as a function of wavelength and temperature are presented.

Study of vanadium doped ZnO films prepared by dc reactive magnetron sputtering at different substrate temperatures.

PubMed

Meng, Lijian; Teixeira, Vasco; Dos Santos, M P

2013-02-01

ZnO films doped with vanadium (ZnO:V) have been prepared by dc reactive magnetron sputtering technique at different substrate temperatures (RT-500 degrees C). The effects of the substrate temperature on ZnO:V films properties have been studied. XRD measurements show that only ZnO polycrystalline structure has been obtained, no V2O5 or VO2 crystal phase can be observed. It has been found that the film prepared at low substrate temperature has a preferred orientation along the (002) direction. As the substrate temperature is increased, the (002) peak intensity decreases. When the substrate temperature reaches the 500 degrees C, the film shows a random orientation. SEM measurements show a clear formation of the nano-grains in the sample surface when the substrate temperature is higher than 400 degrees C. The optical properties of the films have been studied by measuring the specular transmittance. The refractive index has been calculated by fitting the transmittance spectra using OJL model combined with harmonic oscillator.

Colorless polyimide/organoclay nanocomposite substrates for flexible organic light-emitting devices.

PubMed

Kim, Jin-Hoe; Choi, Myeon-Chon; Kim, Hwajeong; Kim, Youngkyoo; Chang, Jin-Hae; Han, Mijeong; Kim, Il; Ha, Chang-Sik

2010-01-01

We report the preparation and application of indium tin oxide (ITO) coated fluorine-containing polyimide/organoclay nanocomposite substrate. Fluorine-containing polyimide/organoclay nanocomposite films were prepared through thermal imidization of poly(amic acid)/organoclay mixture films, whilst on which ITO thin films were coated on the films using a radio-frequency planar magnetron sputtering by varying the substrate temperature and the ITO thickness. Finally the ITO coated fluorine-containing polyimide/organoclay nanocomposite substrate was employed to make flexible organic light-emitting devices (OLED). Results showed that the lower sheet resistance was achieved when the substrate temperature was high and the ITO film was thick even though the optical transmittance was slightly lowered as the thickness increased. approximately 10 nm width ITO nanorods were found for all samples but the size of clusters with the nanorods was generally increased with the substrate temperature and the thickness. The flexible OLED made using the present substrate was quite stable even when the device was extremely bended.

Texture related unusual phenomena in electrodeposition and vapor deposition

NASA Astrophysics Data System (ADS)

Lee, D. N.; Han, H. N.

2015-04-01

The tensile strength of electrodeposits generally decreases with increasing bath temperature because the grain size increases and the dislocation density decreases with increasing bath temperature. Therefore, discontinuities observed in the tensile strength vs. bath temperature curves in electrodeposition of copper are unusual. The tensile strength of electrodeposits generally increases with increasing cathode current density because the rate of nucleation in electrodeposits increases with increasing current density, which in turn gives rise to a decrease in the grain size and in turn an increase in the strength. Therefore, a decrease in the tensile strength of copper electrodeposits at a high current density is unusual. The grain size of vapor deposits is expected to decrease with decreasing substrate temperature. However, rf sputtered Co-Cr deposits showed that deposits formed on water-cooled polyimide substrates had a larger grain size than deposits formed on polyimide substrates at 200 °C. These unusual phenomena can be explained by the preferred growth model for deposition texture evolution.

Biochar increases plant growth and alters microbial communities via regulating the moisture and temperature of green roof substrates.

PubMed

Chen, Haoming; Ma, Jinyi; Wei, Jiaxing; Gong, Xin; Yu, Xichen; Guo, Hui; Zhao, Yanwen

2018-09-01

Green roofs have increasingly been designed and applied to relieve environmental problems, such as water loss, air pollution as well as heat island effect. Substrate and vegetation are important components of green roofs providing ecosystem services and benefiting the urban development. Biochar made from sewage sludge could be potentially used as the substrate amendment for green roofs, however, the effects of biochar on substrate quality and plant performance in green roofs are still unclear. We evaluated the effects of adding sludge biochar (0, 5, 10, 15 and 20%, v/v) to natural soil planted with three types of plant species (ryegrass, Sedum lineare and cucumber) on soil properties, plant growth and microbial communities in both green roof and ground ecosystems. Our results showed that sludge biochar addition significantly increased substrate moisture, adjusted substrate temperature, altered microbial community structure and increased plant growth. The application rate of 10-15% sludge biochar on the green roof exerted the most significant effects on both microbial and plant biomass by 63.9-89.6% and 54.0-54.2% respectively. Path analysis showed that biochar addition had a strong effect on microbial biomass via changing the soil air-filled porosity, soil moisture and temperature, and promoted plant growth through the positive effects on microbial biomass. These results suggest that the applications of biochar at an appropriate rate can significantly alter plant growth and microbial community structure, and increase the ecological benefits of green roofs via exerting effects on the moisture, temperature and nutrients of roof substrates. Copyright © 2018 Elsevier B.V. All rights reserved.

[Preparation and Performance of Ultrafast γ-CuI Scintillation Conversion Screen].

PubMed

Xia, Ming; Gu, Mu; Liu, Xiao-lin; Liu, Bo; Huang, Shi-ming; Ni, Chen

2015-04-01

Micro-columnar structured γ-CuI scintillation conversion screen with columnar diameter in the micrometer and thickness about 17 µm were prepared by thermal evaporation method on quartz substrates with different temperatures. X-ray excited luminescence spectra of the screens show two peaks located at 430 nm and near 700 nm, which correspond to the fast and slow emission components, respectively. The fast one dominated. The intensity of 430 nm peak decreased as the substrate temperature rose from 170 °C to 210 °C. At the same time the intensity of 700 nm band increased. The changes may be attributed to the iodine loss from screen caused by the substrate temperature. The phenomenon of iodine loss was observed by the Rutherford backscattering experiment. The crystal structure of the screens presents (111) preferred orientation, which is independent of the substrate temperature. As the temperature rose to 210 °C, two weak additional peaks of (220) and (420) γ-CuI crystal planes in X-ray diffraction patterns appeared due to the increase in kinetic energy of CuI molecules. The scanning electron microscopy images of the screens showed that the columnar structure was improved when the substrate temperature increased from 170 °C to 190 °C, but it would be degenerated when the temperature continued to rise to 210 °C because of the surface and bulk diffusion effects of the depositing molecules. Finally, the spatial resolution of the γ-CuI scintillation screens was measured by knife-edge method, and they are 4.5, 7.2 and 5.6lp · mm(-1) for the screens prepared at the substrates temperatures of 170, 190 and 210 °C, respectively. The result shows that micro-column structure could improve the spatial resolution of γ-CuI scintillation screen.

Fe-Al alloy single-crystal thin film preparation for basic magnetic measurements

NASA Astrophysics Data System (ADS)

Abe, Tatsuya; Kawai, Tetsuroh; Futamoto, Masaaki; Ohtake, Mitsuru; Inaba, Nobuyuki

2018-04-01

Fe100-xAlx (x = 0, 4, 10, 20, 30 at. %) alloy films of 40 nm thickness are prepared on MgO(001) single-crystal substrates by varying substrate temperature from room temperature to 600 °C. Single-crystal films of (001) orientation with bcc-based disordered A2 structure are obtained for the Al content range of x = 0 - 20 at. %. An ordered phase of DO3 structure is observed in Fe70Al30 films prepared at temperatures higher than 200 °C, whereas (001) oriented single-crystal films of A2 structure are obtained when prepared at room temperature. The film surface profile does not depend much on the film composition, while the surface roughness increases with increasing substrate temperature. Island-like crystals are observed for films prepared at 600°C for all compositions. Difference in lattice spacing measured parallel and perpendicular to the substrate is noted for the single-crystal thin films and it increases with increasing Al content. The lattice strain in single-crystal film is caused possibly to accommodate the lattice mismatch with the MgO substrate. The (001)-oriented single-crystal films with A2 structure show four-fold symmetries in in-plane magnetic anisotropy with the easy magnetization axis A2[100] and the hard magnetization axis A2[110], whereas the films with DO3 ordered structure show almost isotropic magnetic properties.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, F.; Hoard, R.W.

1994-05-10

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, Fred; Hoard, Ronald W.

1994-01-01

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO{sub 2} Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kana, J. B. Kana; Department of physics, University of Yaounde I, P.O. Box 812 Yaounde; Ndjaka, J. M.

2008-09-23

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO{sub 2}) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 deg. C to 600 deg. C. The X-ray diffraction results demonstrated that the Au and VO{sub 2} weremore » well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 deg. C to 100 deg. C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at {approx}57 nm for substrate temperature higher than 500 deg. C.« less

Wettability of eutectic NaLiCO3 salt on magnesium oxide substrates at 778 K

NASA Astrophysics Data System (ADS)

Li, Chuan; Li, Qi; Cao, Hui; Leng, Guanghui; Li, Yongliang; Wang, Li; Zheng, Lifang; Ding, Yulong

2018-06-01

We investigated the wetting behavior of a eutectic carbonate salt of NaLiCO3 on MgO substrates at an elevated temperature of 778 K by measuring contact angle with a sessile drop method. Both sintered and non-sintered MgO were prepared and used as the substrates. The sintered substrates were obtained by sintering compacted MgO powders at 500-1300 °C. For comparison purposes, a single crystal MgO substrate was also used in the work. The different sintering temperatures provided MgO substrates with different structures, allowing their effects on salt penetration and hence wettability and surface energy to be investigated. A scanning electron microscope equipped with energy dispersive spectrometry and an atomic force microscope were used to observe the morphology and structures of the MgO substrates as well as the salt penetration. The results showed a good wettability of the carbonate salt on both the sintered and non-sintered MgO substrates and the wettability depended strongly on the structure of the substrates. The non-sintered MgO substrate has a loose surface particle packing with large pores and crevices, leading to significant salt infiltration, and the corresponding contact angle was measured to be ∼25°. The contact angle of the salt on the sintered MgO substrates increased with an increase in the sintering temperature of the MgO substrate, and the contact angle of the salt on the single crystal substrate was the highest at ∼40°. The effect of the sintering temperature for making the MgO substrate could be linked to the surface energy, and the linkage is validated by the AFM measurements of the adhesion forces of the MgO substrates.

Thermal process induced change of conductivity in As-doped ZnO

NASA Astrophysics Data System (ADS)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

Fiber Bragg grating cryogenic temperature sensors

NASA Astrophysics Data System (ADS)

Gupta, Sanjay; Mizunami, Toru; Yamao, Takashi; Shimomura, Teruo

1996-09-01

Temperature sensing to as low as 80 K was demonstrated with 1.55- mu m fiber Bragg gratings. The gratings were bonded on substrates to increase sensitivity, and a shift of the reflection wavelength was measured. The temperature sensitivity was 0.02 nm/K at 100 K when an aluminum substrate was used and 0.04 nm/K at 100 K when a poly(methyl methacrylate) substrate was used. These values are smaller than those at room temperature because of the nonlinearity of both the thermal expansion and the thermo-optic effect. Extension to the liquid helium temperature is also discussed.

Zinc coated sheet steel for press hardening

NASA Astrophysics Data System (ADS)

Ghanbari, Zahra N.

Galvanized steels are of interest to enhance corrosion resistance of press-hardened steels, but concerns related to liquid metal embrittlement have been raised. The objective of this study was to assess the soak time and temperature conditions relevant to the hot-stamping process during which Zn penetration did or did not occur in galvanized 22MnB5 press-hardening steel. A GleebleRTM 3500 was used to heat treat samples using hold times and temperatures similar to those used in industrial hot-stamping. Deformation at both elevated temperature and room temperature were conducted to assess the coating and substrate behavior related to forming (at high temperature) and service (at room temperature). The extent of alloying between the coating and substrate was assessed on undeformed samples heat treated under similar conditions to the deformed samples. The coating transitioned from an α + Gamma1 composition to an α (bcc Fe-Zn) phase with increased soak time. This transition likely corresponded to a decrease in availability of Zn-rich liquid in the coating during elevated temperature deformation. Penetration of Zn into the substrate sheet in the undeformed condition was not observed for any of the processing conditions examined. The number and depth of cracks in the coating and substrate steel was also measured in the hot-ductility samples. The number of cracks appeared to increase, while the depth of cracks appeared to decrease, with increasing soak time and increasing soak temperature. The crack depth appeared to be minimized in the sample soaked at the highest soak temperature (900 °C) for intermediate and extended soak times (300 s or 600 s). Zn penetration into the substrate steel was observed in the hot-ductility samples soaked at each hold temperature for the shortest soak time (10 s) before being deformed at elevated temperature. Reduction of area and elongation measurements showed that the coated sample soaked at the highest temperature and longest soak time maintained the highest ductility when compared to the uncoated sample processed under the sample conditions. Fractography of the hot-ductility samples showed features associated with increased ductility with increased soak time for all soak temperatures. Heat treatments (without elevated temperature deformation) and subsequent room temperature deformation were conducted to investigate the "in-service" behavior of 22MnB5. The uncoated and coated specimens deformed at room temperature showed similar ultimate tensile strength and ductility values. The only notable differences in the room temperature mechanical behavior of uncoated and coated samples processed under the same conditions were a result of differences in the substrate microstructure. All samples appeared to have ductile fracture features; features characteristic of liquid metal embrittlement were not observed.

Structural and optical properties of electron beam evaporated yttria stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kirubaharan, A. Kamalan; Kuppusami, P.; Singh, Akash; Dharini, T.; Ramachandran, D.; Mohandas, E.

2015-06-01

Yttria stabilized zirconia (10 mole % Y2O3) thin films were deposited on quartz substrates using electron beam physical vapor deposition at the substrate temperatures in the range 300 - 973 K. XRD analysis showed cubic crystalline phase of YSZ films with preferred orientation along (111). The surface roughness was found to increase with the increase of deposition temperatures. The optical band gap of ˜5.7 eV was calculated from transmittance curves. The variation in the optical properties is correlated with the changes in the microstructural features of the films prepared as a function of substrate temperature.

Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Hassayoun, Latifa Slimen; Maaref, Hassen; Panczer, Gerard; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle

2017-12-01

Composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. Ge grown at 400 °C on PSi buffer produces a planar Ge film with high crystalline quality compared to Ge grown on bulk Si. This result is attributed to the compliant nature of PSi. Increasing growth temperature >600 °C, changes the PSi morphology, increase the Ge/Si intermixing in the pores during Ge growth and lead to obtain a composite SiGe/Si substrate. Ge content in the composite SiGe substrate can controlled via growth temperature. These substrates serve as low cost virtual substrate for high efficiency III-V/Si solar cells.

Effect of substrate preheating treatment on the microstructure and ultrasonic cavitation erosion behavior of plasma-sprayed YSZ coatings.

PubMed

Deng, Wen; An, Yulong; Hou, Guoliang; Li, Shuangjian; Zhou, Huidi; Chen, Jianmin

2018-09-01

Inconel 718 was used as the substrate and preheated at different temperatures to deposit yttrium stabilized zirconia (denoted as YSZ) coatings by atmospheric plasma spraying. The microstructure of the as-deposited YSZ coatings and those after cavitation-erosion tests were characterized by field emission scanning electron microscopy, Raman spectroscopy, and their hardness and toughness as well as cavitation-erosion resistance were evaluated in relation to the effect of substrate preheating temperature. Results indicate that the as-deposited YSZ coatings exhibit typical layered structure and consist of columnar crystals. With the increase of the substrate preheating temperature, the compactness and cohesion strength of coatings are obviously enhanced, which result in the increases in the hardness, elastic modulus and toughness as well as cavitation-erosion resistance of the ceramic coatings therewith. Particularly, the YSZ coating deposited at a substrate preheating temperature of 800 °C exhibits the highest hardness and toughness as well as the strongest lamellar interfacial bonding and cavitation-erosion resistance (its cavitation-erosion life is as much as 8 times than that of deposited at room temperature). Copyright © 2018 Elsevier B.V. All rights reserved.

Surface roughness analysis of SiO2 for PECVD, PVD and IBD on different substrates

NASA Astrophysics Data System (ADS)

Amirzada, Muhammad Rizwan; Tatzel, Andreas; Viereck, Volker; Hillmer, Hartmut

2016-02-01

This study compares surface roughness of SiO2 thin layers which are deposited by three different processes (plasma-enhanced chemical vapor deposition, physical vapor deposition and ion beam deposition) on three different substrates (glass, Si and polyethylene naphthalate). Plasma-enhanced chemical vapor deposition (PECVD) processes using a wide range of deposition temperatures from 80 to 300 °C have been applied and compared. It was observed that the nature of the substrate does not influence the surface roughness of the grown layers very much. It is also perceived that the value of the surface roughness keeps on increasing as the deposition temperature of the PECVD process increases. This is due to the increase in the surface diffusion length with the rise in substrate temperature. The layers which have been deposited on Si wafer by ion beam deposition (IBD) process are found to be smoother as compared to the other two techniques. The layers which have been deposited on the glass substrates using PECVD reveal the highest surface roughness values in comparison with the other substrate materials and techniques. Different existing models describing the dynamics of clusters on surfaces are compared and discussed.

Effect of the deposition temperature on corrosion resistance and biocompatibility of the hydroxyapatite coatings

NASA Astrophysics Data System (ADS)

Vladescu, A.; Braic, M.; Azem, F. Ak; Titorencu, I.; Braic, V.; Pruna, V.; Kiss, A.; Parau, A. C.; Birlik, I.

2015-11-01

Hydroxyapatite (HAP) ceramics belong to a class of calcium phosphate-based materials, which have been widely used as coatings on titanium medical implants in order to improve bone fixation and thus to increase the lifetime of the implant. In this study, HAP coatings were deposited from pure HAP targets on Ti6Al4V substrates using the radio-frequency magnetron sputtering technique at substrate temperatures ranging from 400 to 800 °C. The surface morphology and the crystallographic structure of the films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The corrosion resistance of the coatings in saliva solution at 37 °C was evaluated by potentiodynamic polarization. Additionally, the human osteosarcoma cell line (MG-63) was used to test the biocompatibility of the coatings. The results showed that all of the coatings grown uniformly and that the increasing substrate temperature induced an increase in their crystallinity. Corrosion performance of the coatings was improved with the increase of the substrate temperature from 400 °C to 800 °C. Furthermore, all the coatings support the attachment and growth of the osteosarcoma cells with regard to the in vitro test findings.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

2010-04-01

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Influence of solidification on the impact of supercooled water drops onto cold surfaces

NASA Astrophysics Data System (ADS)

Li, Hai; Roisman, Ilia V.; Tropea, Cameron

2015-06-01

This study presents an experimental investigation of the impact of a supercooled drop onto hydrophilic and superhydrophobic substrates. The aim is to better understand the process of airframe icing caused by supercooled large droplets, which has been recently identified as a severe hazard in aviation. The Weber number and Reynolds number of the impinging drop ranged from 200 to 300 and from 2600 to 5800, respectively. Drop impact, spreading, and rebound were observed using a high-speed video system. The maximum spreading diameter of an impacting drop on hydrophilic surfaces was measured. The temperature effect on this parameter was only minor for a wide range of the drop and substrate temperatures. However, ice/water mixtures emerged when both the drop and substrate temperatures were below 0 °C. Similarly, drop rebound on superhydrophobic substrates was significantly hindered by solidification when supercooled drop impacted onto substrates below the freezing point. The minimum receding diameter and the speed of ice accretion on the substrate were measured for various wall temperatures. Both parameters increased almost linearly with decreasing wall temperature, but eventually leveled off beyond a certain substrate temperature. The rate of ice formation on the substrate was significantly higher than the growth rate of free ice dendrites, implying that multiple nucleation sites were present.

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Influence of substrate temperature on properties of MgF 2 coatings

NASA Astrophysics Data System (ADS)

Yu, Hua; Qi, Hongji; Cui, Yun; Shen, Yanming; Shao, JianDa; Fan, ZhengXiu

2007-05-01

Thermal boat evaporation was employed to prepare MgF 2 single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 °C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 °C that the refractive index was higher than those deposited at 244 and 277 °C. The tensile residual stresses were exhibited in all MgF 2 films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 °C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail.

Effects of Soil Temperature and Moisture on Soil Respiration on the Tibetan Plateau

PubMed Central

Chang, Xiaofeng; Wang, Shiping; Xu, Burenbayin; Luo, Caiyun; Zhang, Zhenhua; Wang, Qi; Rui, Yichao; Cui, Xiaoying

2016-01-01

Understanding of effects of soil temperature and soil moisture on soil respiration (Rs) under future warming is critical to reduce uncertainty in predictions of feedbacks to atmospheric CO2 concentrations from grassland soil carbon. Intact cores with roots taken from a full factorial, 5-year alpine meadow warming and grazing experiment in the field were incubated at three different temperatures (i.e. 5, 15 and 25°C) with two soil moistures (i.e. 30 and 60% water holding capacity (WHC)) in our study. Another experiment of glucose-induced respiration (GIR) with 4 h of incubation was conducted to determine substrate limitation. Our results showed that high temperature increased Rs and low soil moisture limited the response of Rs to temperature only at high incubation temperature (i.e. 25°C). Temperature sensitivity (Q10) did not significantly decrease over the incubation period, suggesting that substrate depletion did not limit Rs. Meanwhile, the carbon availability index (CAI) was higher at 5°C compared with 15 and 25°C incubation, but GIR increased with increasing temperature. Therefore, our findings suggest that warming-induced decrease in Rs in the field over time may result from a decrease in soil moisture rather than from soil substrate depletion, because warming increased root biomass in the alpine meadow. PMID:27798671

The hydrolysis and biogas production of complex cellulosic substrates using three anaerobic biomass sources.

PubMed

Keating, C; Cysneiros, D; Mahony, T; O'Flaherty, V

2013-01-01

In this study, the ability of various sludges to digest a diverse range of cellulose and cellulose-derived substrates was assessed at different temperatures to elucidate the factors affecting hydrolysis. For this purpose, the biogas production was monitored and the specific biogas activity (SBA) of the sludges was employed to compare the performance of three anaerobic sludges on the degradation of a variety of complex cellulose sources, across a range of temperatures. The sludge with the highest performance on complex substrates was derived from a full-scale bioreactor treating sewage at 37 °C. Hydrolysis was the rate-limiting step during the degradation of complex substrates. No activity was recorded for the synthetic cellulose compound carboxymethylcellulose (CMC) using any of the sludges tested. Increased temperature led to an increase in hydrolysis rates and thus SBA values. The non-granular nature of the mesophilic sludge played a positive role in the hydrolysis of solid substrates, while the granular sludges proved more effective on the degradation of soluble compounds.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

NASA Astrophysics Data System (ADS)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

2007-06-01

The surface properties of a plastic substrate were changed by a novel surface treatment called atomic hydrogen annealing (AHA). In this method, a plastic substrate was exposed to atomic hydrogen generated by cracking hydrogen molecules on heated tungsten wire. For the substrate, surface roughness was increased and halogen elements (F and Cl) were selectively etched by AHA. AHA was useful for pretreatment before film deposition on a plastic substrate because the changes in surface state relate to adhesion improvement. It is concluded that this method is a promising technique for preparing high-performance plastic substrates at low temperatures.

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

NASA Astrophysics Data System (ADS)

Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

2018-05-01

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

Cold Gas-Sprayed Deposition of Metallic Coatings onto Ceramic Substrates Using Laser Surface Texturing Pre-treatment

NASA Astrophysics Data System (ADS)

Kromer, R.; Danlos, Y.; Costil, S.

2018-04-01

Cold spraying enables a variety of metals dense coatings onto metal surfaces. Supersonic gas jet accelerates particles which undergo with the substrate plastic deformation. Different bonding mechanisms can be created depending on the materials. The particle-substrate contact time, contact temperature and contact area upon impact are the parameters influencing physicochemical and mechanical bonds. The resultant bonding arose from plastic deformation of the particle and substrate and temperature increasing at the interface. The objective was to create specific topography to enable metallic particle adhesion onto ceramic substrates. Ceramic did not demonstrate deformation during the impact which minimized the intimate bonds. Laser surface texturing was hence used as prior surface treatment to create specific topography and to enable mechanical anchoring. Particle compressive states were necessary to build up coating. The coating deposition efficiency and adhesion strength were evaluated. Textured surface is required to obtain strong adhesion of metallic coatings onto ceramic substrates. Consequently, cold spray coating parameters depend on the target material and a methodology was established with particle parameters (diameters, velocities, temperatures) and particle/substrate properties to adapt the surface topography. Laser surface texturing is a promising tool to increase the cold spraying applications.

Molecular dynamics study of the growth of a metal nanoparticle array by solid dewetting

NASA Astrophysics Data System (ADS)

Luan, Yanhua; Li, Yanru; Nie, Tiaoping; Yu, Jun; Meng, Lijun

2018-03-01

We investigated the effect of the substrate and the ambient temperature on the growth of a metal nanoparticle array (nanoarray) on a solid-patterned substrate by dewetting a Au liquid film using an atomic simulation technique. The patterned substrate was constructed by introducing different interaction potentials for two atom groups ( C 1 and C 2) in the graphene-like substrate. The C 1 group had a stronger interaction between the Au film and the substrate and was composed of regularly distributed circular disks with radius R and distance D between the centers of neighboring disks. Our simulation results demonstrate that R and D have a strikingly different influence on the growth of the nanoparticle arrays. The degree of order of the nanoarray increases first before it reaches a peak and then decreases for increasing R at fixed D. However, the degree of order increases monotonously when D is increased and reaches a saturated value beyond a critical value of D for a fixed R. Interestingly, a labyrinth-like structure appeared during the dewetting process of the metal film. The simulation results also indicated that the temperature was an important factor in controlling the properties of the nanoarray. An appropriate temperature leads to an optimized nanoarray with a uniform grain size and well-ordered particle distribution. These results are important for understanding the dewetting behaviors of metal films on solid substrates and understanding the growth of highly ordered metal nanoarrays using a solid-patterned substrate method.

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

2004-12-01

Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

Defect studies of thin ZnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Vlček, M.; Čížek, J.; Procházka, I.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Mosnier, J.-P.

2014-04-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

NASA Technical Reports Server (NTRS)

Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

1992-01-01

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Cluster adsorption on amorphous and crystalline surfaces - A molecular dynamics study of model Pt on Cu and model Pd on Pt

NASA Technical Reports Server (NTRS)

Garofalini, S. H.; Halicioglu, T.; Pound, G. M.

1981-01-01

Molecular dynamics was used to study the structure, dispersion and short-time behavior of ten-atom clusters adsorbed onto amorphous and crystalline substrates, in which the cluster atoms differed from the substrate atoms. Two adatom-substrate model systems were chosen; one, in which the interaction energy between adatom pairs was greater than that between substrate pairs, and the other, in which the reverse was true. At relatively low temperature ranges, increased dispersion of cluster atoms occurred: (a) on the amorphous substrate as compared to the FCC(100) surface, (b) with increasing reduced temperature, and (c) with adatom-substrate interaction energy stronger than adatom-adatom interaction. Two-dimensional clusters (rafts) on the FCC(100) surface displayed migration of edge atoms only, indicating a mechanism for the cluster rotation and shape changes found in experimental studies.

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Growth and characterization of V2O5 nanorods deposited by spray pyrolysis at low temperatures

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai.; Mohammad, Sabah M.; Bououdina, M.

2016-07-01

Vanadium pentoxide (V2O5) nanorods were deposited by spray pyrolysis on preheated glass substrates at low temperatures. The influence of substrate temperature on the crystallization of V2O5 has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at Tsub = 300°C were orthorhombic structures with preferential along (001) direction. Formation of nanorods from substrate surface which led to the formation of films with small-sized and rod-shaped nanostructure is observed by field scanning electron microscopy. Optical transmittance in the visible range increases to reach a maximum value of about 80% for a substrate temperature of 350°C. PL spectra reveal one main broad peak centered around 540 nm with high intensity.

Complex coupled metabolic and prokaryotic community responses to increasing temperatures in anaerobic marine sediments: critical temperatures and substrate changes

PubMed Central

Roussel, Erwan G.; Cragg, Barry A.; Webster, Gordon; Sass, Henrik; Tang, Xiaohong; Williams, Angharad S.; Gorra, Roberta; Weightman, Andrew J.; Parkes, R. John

2015-01-01

The impact of temperature (0–80°C) on anaerobic biogeochemical processes and prokaryotic communities in marine sediments (tidal flat) was investigated in slurries for up to 100 days. Temperature had a non-linear effect on biogeochemistry and prokaryotes with rapid changes over small temperature intervals. Some activities (e.g. methanogenesis) had multiple ‘windows’ within a large temperature range (∼10 to 80°C). Others, including acetate oxidation, had maximum activities within a temperature zone, which varied with electron acceptor [metal oxide (up to ∼34°C) and sulphate (up to ∼50°C)]. Substrates for sulphate reduction changed from predominantly acetate below, and H2 above, a 43°C critical temperature, along with changes in activation energies and types of sulphate-reducing Bacteria. Above ∼43°C, methylamine metabolism ceased with changes in methanogen types and increased acetate concentrations (>1 mM). Abundances of uncultured Archaea, characteristic of deep marine sediments (e.g. MBGD Euryarchaeota, ‘Bathyarchaeota’) changed, indicating their possible metabolic activity and temperature range. Bacterial cell numbers were consistently higher than archaeal cells and both decreased above ∼15°C. Substrate addition stimulated activities, widened some activity temperature ranges (methanogenesis) and increased bacterial (×10) more than archaeal cell numbers. Hence, additional organic matter input from climate-related eutrophication may amplify the impact of temperature increases on sedimentary biogeochemistry. PMID:26207045

Enzymatic mechanisms of soil-carbon response to temperature on Mt. Kilimanjaro

NASA Astrophysics Data System (ADS)

Blagodatskaya, Evgenia; Blagodatskiy, Sergey; Kuzyakov, Yakov

2016-04-01

Short-term acceleration of soil organic matter (SOM) decomposition by increasing temperature contradicts the acclimation observed in long-term studies. We used the unique altitudinal gradient (from colline tropical zone to subalpine zone) on Mt. Kilimanjaro to demonstrate the mechanisms of short- and long-term acclimation of extra- and intracellular enzymes that decompose polymers (cellulose, chitin, phytate) and oxidize monomers (14C-glucose). Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation

Synthesis, characterization and ellipsometric study of ultrasonically sprayed Co3O4 films

NASA Astrophysics Data System (ADS)

Gençyılmaz, O.; Taşköprü, T.; Atay, F.; Akyüz, İ.

2015-10-01

In the present study, cobalt oxide (Co3O4) films were produced using ultrasonic spray pyrolysis technique onto the glass substrate at different temperatures (200-250-300-350 °C). The effect of substrate temperature on the structural, optical, surface and electrical properties of Co3O4 films was reported. Thickness, refractive index and extinction coefficient of the films were determined by spectroscopic ellipsometry, and X-ray diffraction analyses revealed that Co3O4 films were polycrystalline fcc structure and the substrate temperature significantly improved the crystal structure of Co3O4 films. The films deposited at 350 °C substrate temperature showed the best structural quality. Transmittance, absorbance and reflectance spectra were taken by means of UV-Vis spectrophotometer, and optical band gap values were calculated using optical method. Surface images and roughness values of the films were taken by atomic force microscopy to see the effect of deposition temperature on surface properties. The resistivity of the films slightly decreases with increase in the substrate temperature from 1.08 × 104 to 1.46 × 102 Ω cm. Finally, ultrasonic spray pyrolysis technique allowed production of Co3O4 films, which are alternative metal oxide film for technological applications, at low substrate temperature.

Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates

NASA Astrophysics Data System (ADS)

Galiev, G. B.; Klimova, E. A.; Pushkarev, S. S.; Klochkov, A. N.; Trunkin, I. N.; Vasiliev, A. L.; Maltsev, P. P.

2017-07-01

The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411) A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411) A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411) A substrates into polycrystalline ones.

Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

NASA Astrophysics Data System (ADS)

Jones, Andrew Marquis

The advantages of optical communication through silica fiber have made long-distance electrical communication through copper wire obsolete. The two windows of operation for long-haul optical communication are centered around the wavelengths of 1.3 mum and 1.55 mum, which have minimal amounts of signal attenuation and dispersion. Benefits of optical communications within these windows include low system costs, high bandwidth, and high system reliability which have encouraged the development of emitters and receivers at these relatively long wavelengths. Long-wavelength semiconductor lasers are typically fabricated on InP substrates, but their performance suffers greatly with increases in operating temperature. Laser diodes on GaAs substrates are not as sensitive to operating temperature due to quantum-well active regions with relative deep potential barriers, but critical thickness limits the wavelength ceiling to 1.1 mum. Strain-relief technologies are currently being investigated to enable long-wavelength lasers with deeper potential wells leading to a corresponding increase in characteristic temperatures. Having a larger lattice constant than GaAs enables ternary InGaAs substrates to increase the 1.1-mum wavelength ceiling. Extending this ceiling to one of the optical communication windows could enable high-characteristic-temperature, long-wavelength lasers. Broad-area and buried-heterostructure lasers have demonstrated the potential of ternary substrates to increase characteristic temperatures and emission wavelengths. Wavelengths as long as 1.15 mum and characteristic temperatures as high as 145 K have been achieved. Reduced-area metalorganic chemical vapor deposition involves the deposition of strained materials on isolated islands. Due to the discontinuous nature of reduced-area epitaxy, strained materials are allowed to expand near the mesa edges, decreasing the overall strain in the structure. Laser diodes using this technology have been successfully fabricated, and evidence for partial relief of strain energy has been obtained. Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Motor-substrate interactions in mycoplasma motility explains non-Arrhenius temperature dependence.

PubMed

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-12-02

Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by approximately 400 "leg" proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10-40 degrees C. This corresponds to an Arrhenius factor that decreases from approximately 45 k(B)T at 10 degrees C to approximately 10 k(B)T at 40 degrees C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction.

Motor-Substrate Interactions in Mycoplasma Motility Explains Non-Arrhenius Temperature Dependence

PubMed Central

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-01-01

Abstract Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by ∼400 “leg” proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10–40°C. This corresponds to an Arrhenius factor that decreases from ∼45 kBT at 10°C to ∼10 kBT at 40°C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction. PMID:19948122

Jet Fuel Thermal Stability Investigations Using Ellipsometry

NASA Technical Reports Server (NTRS)

Nash, Leigh; Vasu, Subith S.; Klettlinger, Jennifer Lindsey

2017-01-01

Jet fuels are typically used for endothermic cooling in practical engines where their thermal stability is very important. In this work the thermal stability of Sasol IPK (a synthetic jet fuel) with varying levels of naphthalene has been studied on stainless steel substrates using spectroscopic ellipsometry in the temperature range 385-400 K. Ellipsometry is an optical technique that measures the changes in a light beam’s polarization and intensity after it reflects off of a thin film to determine the film’s thickness and optical properties. All of the tubes used were rated as thermally unstable by the color standard portion of the Jet Fuel Thermal Oxidation Test, and this was confirmed by the deposit thicknesses observed using ellipsometry. A new amorphous model on a stainless steel substrate was used to model the data and obtain the results. It was observed that, as would be expected, increasing the temperature of the tube increased the overall deposit amount for a constant concentration of naphthalene. The repeatability of these measurements was assessed using multiple trials of the same fuel at 385 K. Lastly, the effect of increasing the naphthalene concentration in the fuel at a constant temperature was found to increase the deposit thickness.In conclusion, ellipsometry was used to investigate the thermal stability of jet fuels on stainless steel substrate. The effects of increasing temperature and addition of naphthalene on stainless steel tubes with Sasol IPK fuel were investigated. It was found, as expected, that increasing temperature lead to an increase in deposit thickness. It wasAmerican Institute of Aeronautics and Astronautics6also found that increasing amounts of naphthalene increased the maximum deposit thickness. The repeatability of these measurements was investigated using multiple tests at the same conditions. The present work provides as a better quantitative tool compared to the widely used JFTOT technique. Future work will expand on the fuel types, temperature, and substrate materials.

Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

NASA Astrophysics Data System (ADS)

Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

2016-09-01

Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

Analytical investigations on the thermal properties of microscale inorganic light-emitting diodes on an orthotropic substrate

NASA Astrophysics Data System (ADS)

Li, Y.; Chen, J.; Xing, Y.; Song, J.

2017-03-01

The microscale inorganic light-emitting diodes (μ-ILEDs) create novel opportunities in biointegrated applications such as wound healing acceleration and optogenetics. Analytical expressions, validated by finite element analysis, are obtained for the temperature increase of a rectangular μ-ILED device on an orthotropic substrate, which could offer an appealing advantage in controlling the heat flow direction to achieve the goal in thermal management. The influences of various parameters (e.g., thermal conductivities of orthotropic substrate, loading parameters) on the temperature increase of the μ-ILED are investigated based on the obtained closed-form solutions. These results provide a novel route to control the temperature distribution in the μ-ILED system and provide easily interpretable guidelines to minimize the adverse thermal effects.

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

NASA Astrophysics Data System (ADS)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

NASA Astrophysics Data System (ADS)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Substrate Integrated Waveguide (SIW)-Based Wireless Temperature Sensor for Harsh Environments.

PubMed

Tan, Qiulin; Guo, Yanjie; Zhang, Lei; Lu, Fei; Dong, Helei; Xiong, Jijun

2018-05-03

This paper presents a new wireless sensor structure based on a substrate integrated circular waveguide (SICW) for the temperature test in harsh environments. The sensor substrate material is 99% alumina ceramic, and the SICW structure is composed of upper and lower metal plates and a series of metal cylindrical sidewall vias. A rectangular aperture antenna integrated on the surface of the SICW resonator is used for electromagnetic wave transmission between the sensor and the external antenna. The resonant frequency of the temperature sensor decreases when the temperature increases, because the relative permittivity of the alumina ceramic increases with temperature. The temperature sensor presented in this paper was tested four times at a range of 30⁻1200 °C, and a broad band coplanar waveguide (CPW)-fed antenna was used as an interrogation antenna during the test process. The resonant frequency changed from 2.371 to 2.141 GHz as the temperature varied from 30 to 1200 °C, leading to a sensitivity of 0.197 MHz/°C. The quality factor of the sensor changed from 3444.6 to 35.028 when the temperature varied from 30 to 1000 °C.

Substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chung, Seungjun; Lee, Jae-Hyun; Jeong, Jaewook; Kim, Jang-Joo; Hong, Yongtaek

2009-06-01

We report substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes (OLEDs). Heat dissipation behavior of top-emission OLEDs fabricated on silicon, glass, and planarized stainless steel substrates was measured by using an infrared camera. Peak temperature measured from the backside of each substrate was saturated to be 21.4, 64.5, and 40.5 °C, 180 s after the OLED was operated at luminance of 10 000 cd/m2 and 80% luminance lifetime was about 198, 31, and 96 h, respectively. Efficient heat dissipation through the highly thermally conductive substrates reduced temperature increase, resulting in much improved OLED lifetime.

Testing the effects of temperature and humidity on printed passive UHF RFID tags on paper substrate

NASA Astrophysics Data System (ADS)

Linnea Merilampi, Sari; Virkki, Johanna; Ukkonen, Leena; Sydänheimo, Lauri

2014-05-01

This article is an interesting substrate material for environmental-friendly printable electronics. In this study, screen-printed RFID tags on paper substrate are examined. Their reliability was tested with low temperature, high temperature, slow temperature cycling, high temperature and high humidity and water dipping test. Environmental stresses affect the tag antenna impedance, losses and radiation characteristics due to their impact on the ink film and paper substrate. Low temperature, temperature cycling and high humidity did not have a radical effect on the measured parameters: threshold power, backscattered signal power or read range of the tags. However, the frequency response and the losses of the tags were slightly affected. Exposure to high temperature was found to even improve the tag performance due to the positive effect of high temperature on the ink film. The combined high humidity and high temperature had the most severe effect on the tag performance. The threshold power increased, backscattered power decreased and the read range was shortened. On the whole, the results showed that field use of these tags in high, low and changing temperature conditions and high humidity conditions is possible. Use of these tags in combined high-humidity and high-temperature conditions should be carefully considered.

The Influence of Pre-Heated Treatment to Improve Adhesion Bond Coating Strength of Fly Ash Based Geopolymer Ceramic

NASA Astrophysics Data System (ADS)

Jamaludin, L.; Abdullah, M. M. A. B.; Hussin, K.; Kadir, A. Abdul

2018-06-01

The study focus on effect of pre-heated ceramic surface on the adhesion bond strength between geopolymer coating coating and ceramic substrates. Ceramic substrates was pre-heated at different temperature (400 °C, 600 °C, 800 °C and 1000 °C). Fly ash geopolymer coating material potential used to protect surface used in exposure conditions after sintering at high temperature. Fly ash and alkali activator (Al2O3/Na2SiO3) were mixed with 2.0 solids-to-liquid ratios to prepare geopolymer coating material at constant NaOH concentration of 12M. Adhesion test was conducted to determine the adhesion bond between ceramic substrates and fly ash coating material. The results showed the pre-heated ceramic substrates effect the adhesion bond of coating compared with untreated substrates with increasing of strength up to 20 % for temperature 600 °C.

Influence of substrate temperature on structural, morphological, optical and electrical properties of Bi-doped MnInS4 thin films prepared by nebuliser spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Kennedy, A.; Senthil Kumar, V.; Pradeev Raj, K.

2017-11-01

Bismuth (Bi)-doped manganese indium sulphide (MnInS4) thin films were deposited on heated glass substrates using an aqueous solution of MnCl2, InCl3, (NH2)2CS and BiCl3 by the common nebuliser spray pyrolysis technique. The thin films were grown at various substrate temperatures ranging from 250 to 400 °C with a constant spray time (5 min). The present work aims to study the effect of substrate temperature on the structural, optical, photoluminescence and electrical properties of the grown thin films using various techniques like X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS), UV-Vis absorption spectroscopy, photoluminescence spectra (PL) and four probe methods. The XRD pattern reveals that the Bi-doped MnInS4 thin films were polycrystalline in nature with a cubic spinel structure whose particle size varies between 8.2 and 23.5 nm. From the FE-SEM micrographs, due to the change in the substrate temperature, shapes such as spherical, needle-shaped and T-shaped grains were observed throughout the surface of the films. The energy dispersive analysis spectrum (EDS) shows the presence of Mn, In, S and Bi in the film grown at 250 °C. It is interesting to note that the structural homogeneity and crystallinity of the film is improved due to the decrease in the absorption coefficient (α) and extinction coefficient (K) with an increase in substrate temperature. Also, with an increase in the substrate temperature, the calculated band gap energy was found to decrease from 1.87 to 1.59 eV. From the PL spectra, several intense peaks corresponding to blue, green, yellow, orange and red band emissions were observed in the wavelength region of 350-650 nm. Moreover as the intensity of the peak increases with increase in the substrate temperature, the crystallinity of the material of the film greatly improves concomitant with minimum strain and defect states. From the electrical studies, the electrical conductivity increases with increase in substrate temperature and a maximum electrical conductivity of 3.73 × 10-3 Ω-1m-1 were obtained for the film prepared at 400 °C. The thickness of the films was also measured and the values ranged between 743 nm (250 °C) to 629 nm (400 °C). The high absorption coefficient (1.85 × 104 cm-1) and high transmittance of the films make them an efficient window layer for solar cell applications. Incorporation of Bismuth (Bi) into MnInS4 matrix leads to improve the optical transmittance (85%) and electrical conductivity (3.11 × 10-3 Ω-1 m-1) of the film grown at 400 °C. Other important parameters like dislocation density (δ), strain (ε), the number of crystallites per unit area (N) and lattice distortion (LD), which are commonly used to describe the structural analysis were also presented. Bi-doped MnInS4 thin films were grown by a variety of deposition methods. Among them, spray pyrolysis is an eco-friendly method because of its low cost, mass production capacity, large area coatings and minimum wastage of the source materials.

Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

NASA Astrophysics Data System (ADS)

Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

2004-03-01

(Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Surface diffusion of Si, Ge and C adatoms on Si (001) substrate studied by the molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Chen, Zhi-Hui; Yu, Zhong-Yuan; Lu, Peng-Fei; Liu, Yu-Min

2009-10-01

Depositions of Si, Ge and C atoms onto a preliminary Si (001) substrate at different temperatures are investigated by using the molecular dynamics method. The mechanism of atomic self-assembling occurring locally on the flat terraces between steps is suggested. Diffusion and arrangement patterns of adatoms at different temperatures are observed. At 900 K, the deposited atoms are more likely to form dimers in the perpendicular [110] direction due to the more favourable movement along the perpendicular [110] direction. C adatoms are more likely to break or reconstruct the dimers on the substrate surface and have larger diffusion distances than Ge and Si adatoms. Exchange between C adatoms and substrate atoms are obvious and the epitaxial thickness is small. Total potential energies of adatoms and substrate atoms involved in the simulation cell are computed. When a newly arrived adatom reaches the stable position, the potential energy of the system will decrease and the curves turns into a ladder-like shape. It is found that C adatoms can lead to more reduction of the system energy and the potential energy of the system will increase as temperature increases.

Relation between the conditions of preparation and the polarization characteristics of spongy Raney nickel electrodes used as anodes for fuel cells

NASA Astrophysics Data System (ADS)

Tomida, Tahei; Okamura, Kazuhiro; Ashida, Toshifumi; Nakabayashi, Ichiro

1992-04-01

Spongy Raney nickel electrodes were prepared from substrates of spongy nickel plate coated with aluminum. Influences of the temperature for alloying and the weight ratio of aluminum to nickel (Al/Ni) in the substrate on polarization characteristics were studied in connection with the alloy compositions formed, and the surface microstructure of the catalysts. For this, the ratio Al/Ni in the substrate was varied ranging from 0.1 to 2.5. Electrode performance was improved, with increases in both the temperature for alloying and the Al/Ni ratio of the substrates. However, the higher the temperature used for alloying, the lower were the effects of the Al/Ni ratio. The activated Raney nickel was prepared from an alloy whose components were NiAl3 and/or Ni2Al3. It was also shown that a good polarization performance resulted from the increase in activated nickel grains, which were observed by scanning electron microscopy, and an increase in the Brunauer, Emmett, and Teller (BET) surface area of the electrode-catalyst. The broad peaks observed in X-ray diffraction of Raney nickel catalysts implied crystal distortions, which should be closely related to an increase in the BET surface area.

Effect of substrate preheating on the photovoltaic performance of ZnO nanorod-based perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Wei-Shuo; Lin, Tsyr-Rou; Yang, Hsiu-Ting; Li, Yu-Ren; Chuang, Kai-Chi; Li, Yi-Shao; Luo, Jun-Dao; Hus, Chain-Shu; Cheng, Huang-Chung

2018-06-01

In this study, zinc oxide nanorods (ZnO-NRs) grown via a low-temperature hydrothermal growth process are used as the electron transport layer (ETL) owing to their low temperature process and three-dimensional structure, which increases the surface area and thereby improves photovoltaic performance. To further improve the performance of solar cells, substrate preheating before spin-coating PbI2 and perovskite films was conducted. With the increase in preheating temperature, the grain size, surface uniformity, and crystallinity of perovskite increased. Consequently, the photovoltaic performances of the devices with 150-nm-long ZnO-NRs and substrate preheating at 150 °C showed an optimum open-circuit voltage (V oc) of 0.84 V, a short-circuit current (J sc) of 21.43 mA/cm2, a fill factor (FF) of 57.42%, and a power conversion efficiency (PCE) of 10.34% owing to the superior quality of the perovskite films having smooth surfaces with fewer pinholes.

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

Inorganic-polymer-derived dielectric films

DOEpatents

Brinker, C.J.; Keefer, K.D.; Lenahan, P.M.

1985-02-25

A method is disclosed for coating a substrate with a thin film of a predetermined porosity. The method comprises: depositing the thin film on the substrate from a non-gelled solution comprising at least one metal alkoxide of a polymeric network forming cation, water, an alcohol compatible with the hydrolysis and the polymerization of the metal alkoxide, and an acid or a base; prior to said depositing step, controlling the porosity and structure of said coating for a given composition of said solution exclusive of the acid or base component and the water component, by adjusting each of the water content, the pH, the temperature and the time of standing of said solution, increasing/descreasing the water content or the pH to increase/decrease the pore size of said coating, and increasing/decreasing the temperature or time of standing of said solution to increase/decrease the pore size of said coating; and curing said deposited film at a temperature effective for curing whereby there is obtained a thin film coating of a predetermined porosity on the substrate.

Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

NASA Astrophysics Data System (ADS)

Trinh, Cham Thi; Nakagawa, Yoshihiko; Hara, Kosuke O.; Kurokawa, Yasuyoshi; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

2017-05-01

We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 µs was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells.

Hot Films on Ceramic Substrates for Measuring Skin Friction

NASA Technical Reports Server (NTRS)

Noffz, Greg; Leiser, Daniel; Bartlett, Jim; Lavine, Adrienne

2003-01-01

Hot-film sensors, consisting of a metallic film on an electrically nonconductive substrate, have been used to measure skin friction as far back as 1931. A hot film is maintained at an elevated temperature relative to the local flow by passing an electrical current through it. The power required to maintain the specified temperature depends on the rate at which heat is transferred to the flow. The heat transfer rate correlates to the velocity gradient at the surface, and hence, with skin friction. The hot-film skin friction measurement method is most thoroughly developed for steady-state conditions, but additional issues arise under transient conditions. Fabricating hot-film substrates using low-thermal-conductivity ceramics can offer advantages over traditional quartz or polyester-film substrates. First, a low conductivity substrate increases the fraction of heat convected away by the fluid, thus increasing sensitivity to changes in flow conditions. Furthermore, the two-part, composite nature of the substrate allows the installation of thermocouple junctions just below the hot film, which can provide an estimate of the conduction heat loss.

DC-pulse atmospheric-pressure plasma jet and dielectric barrier discharge surface treatments on fluorine-doped tin oxide for perovskite solar cell application

NASA Astrophysics Data System (ADS)

Tsai, Jui-Hsuan; Cheng, I.-Chun; Hsu, Cheng-Che; Chen, Jian-Zhang

2018-01-01

Nitrogen DC-pulse atmospheric-pressure plasma jet (APPJ) and nitrogen dielectric barrier discharge (DBD) were applied to pre-treat fluorine-doped tin oxide (FTO) glass substrates for perovskite solar cells (PSCs). Nitrogen DC-pulse APPJ treatment (substrate temperature: ~400 °C) for 10 s can effectively increase the wettability, whereas nitrogen DBD treatment (maximum substrate temperature: ~140 °C) achieved limited improvement in wettability even with increased treatment time of 60 s. XPS results indicate that 10 s APPJ, 60 s DBD, and 15 min UV-ozone treatment of FTO glass substrates can decontaminate the surface. A PSC fabricated on APPJ-treated FTO showed the highest power conversion efficiency (PCE) of 14.90%; by contrast, a PSC with nitrogen DBD-treated FTO shows slightly lower PCE of 12.57% which was comparable to that of a PSC on FTO treated by a 15 min UV-ozone process. Both nitrogen DC-pulse APPJ and nitrogen DBD can decontaminate FTO substrates and can be applied for the substrate cleaning step of PSC.

Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation

NASA Astrophysics Data System (ADS)

Mayangsari, Tirta R.; Yusup, Luchana L.; Park, Jae-Min; Blanquet, Elisabeth; Pons, Michel; Jung, Jongwan; Lee, Won-Jun

2017-06-01

We modeled and simulated the surface reaction of silicon precursor on different surfaces by thermodynamic analysis and density functional theory calculation. We considered SiH2Cl2 and argon as the silicon precursor and the carrier gas without etchant gas. First, the equilibrium composition of both gaseous and solid species was analyzed as a function of process temperature. SiCl4 is the dominant gaseous species at below 750 °C, and SiCl2 and HCl are dominant at higher temperatures, and the yield of silicon decreases with increasing temperature over 700 °C due to the etching of silicon by HCl. The yield of silicon for SiO2 substrate is lower than that for silicon substrate, especially at 1000 °C or higher. Zero deposition yield and the etching of SiO2 substrate at higher temperatures leads to selective growth on silicon substrate. Next, the adsorption and the reaction of silicon precursor was simulated on H-terminated silicon (100) substrate and on OH-terminated β-cristobalite substrate. The adsorption and reaction of a SiH2Cl2 molecule are spontaneous for both Si and SiO2 substrates. However, the energy barrier for reaction is very small (6×10-4 eV) for Si substrate, whereas the energy barrier is high (0.33 eV) for SiO2 substrate. This makes the differences in growth rate, which also supports the experimental results in literature.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Collar temperature sensor data reveal long-term patterns in southern Beaufort Sea polar bear den distribution on pack ice and land

USGS Publications Warehouse

Olson, Jay W; Rode, Karyn D.; Eggett, Dennis L.; Smith, T.S.; Wilson, R. R.; Durner, George M.; Fischbach, Anthony S.; Atwood, Todd C.; Douglas, David C.

2017-01-01

In response to a changing climate, many species alter habitat use. Polar bears Ursus maritimus in the southern Beaufort Sea have increasingly used land for maternal denning. To aid in detecting denning behavior, we developed an objective method to identify polar bear denning events using temperature sensor data collected by satellite-linked transmitters deployed on adult females between 1985 and 2013. We then applied this method to determine whether southern Beaufort Sea polar bears have continued to increase land denning with recent sea-ice loss and examined whether sea-ice conditions affect the distribution of dens between pack-ice and coastal substrates. Because land use in summer and autumn has also increased, we examined potential associations between summering substrate and denning substrate. Statistical process control methods applied to temperature-sensor data identified denning events with 94.5% accuracy in comparison to direct observations (n = 73) and 95.7% accuracy relative to subjective classifications based on temperature, location, and activity sensor data (n = 116). We found an increase in land-based denning during the study period. The frequency of land denning was directly related to the distance that sea ice retreated from the coast. Among females that denned, all 14 that summered on land subsequently denned there, whereas 29% of the 69 bears summering on ice denned on land. These results suggest that denning on land may continue to increase with further loss of sea ice. While the effects that den substrate have on nutrition, energetics, and reproduction are unclear, more polar bears denning onshore will likely increase human-bear interactions.

Substrate Temperature effect on the transition characteristics of Vanadium (IV) oxide

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Wei, Wei; Jin, Chunming; Narayan, Jay

2008-10-01

One of the semiconductor to metal transition material (SMT) is Vanadium Oxide (VO2) which has a very sharp transition temperature close to 340 K as the crystal structure changes from monoclinic phase (semiconductor) into tetragonal phase (metal phase). We have grown high-quality epitaxial vanadium oxide (VO2) films on sapphire (0001) substrates by pulsed laser deposition for oxygen pressure 10-2torr and obtained interesting results without further annealing treatments. The epitaxial growth via domain matching epitaxy, where integral multiples of planes matched across the film-substrate interface. We were able to control the transition characteristics such as the sharpness (T), amplitude (A) of SMT transition and the width of thermal hysteresis (H) by altering the substrate temperature from 300 ^oC, 400 ^oC, 500 ^oC, and 600 ^oC. We use the XRD to identify the microstructure of film and measure the optical properties of film. Finally the transition characteristics is observed by the resistance with the increase of temperature by Van Der Pauw method from 25 to 100 ^oC to measure the electrical resistivity hystersis loop during the transition temperature.

Growth of Graphene by Catalytic Dissociation of Ethylene on CuNi(111)

NASA Astrophysics Data System (ADS)

Tyagi, Parul; Mowll, Tyler; Robinson, Zachary; Ventrice, Carl

2013-03-01

Copper foil is one of the most common substrates for growing large area graphene films. The main reason for this is that Cu has a very low carbon solubility, which results in the self-termination of a single layer of graphene when grown using hydrocarbon precursors at low pressure. Our previous results on Cu(111) substrates has found that temperatures of at least 900 °C are needed to form single domain epitaxial films. By using a CuNi alloy, the catalytic activity of the substrate is expected to increase, which will allow the catalytic decomposition of the hydrocarbon precursor at lower temperatures. In this study, the growth of graphene by the catalytic decomposition of ethylene on a 90:10 CuNi(111) substrate was attempted. The growths were done in an ultra-high vacuum system by either heating the substrate to the growth temperature followed by introducing the ethylene precursor or by introducing the ethylene precursor and subsequently heating it to the growth temperature. The growth using the former method results in a two-domain epitaxial graphene overlayer. However, introducing the ethylene before heating the substrate resulted in considerable rotational disorder within the graphene film. This has been attributed to the deposition of carbon atoms on the surface at temperatures too low for the carbon to crystallize into graphene. This research was supported by the NSF (DMR-1006411).

Building Integrated Photovoltaic Module-Based on Aluminum Substrate With Forced Water Cooling.

PubMed

Pang, Wei; Zhang, Yongzhe; Cui, Yanan; Yu, Hongwen; Liu, Yu; Yan, Hui

2018-04-01

The increase of operating temperature on a photovoltaic (PV) cell degrades its electrical efficiency. This paper is organized to describe our latest design of an aluminum substrate-based photovoltaic/thermal (PV/T) system. The electrical efficiency of the proposed PV/T can be increased by ∼ 20% in comparison with a conventional glass substrate-based PV. The work will benefit hybrid utilization of solar energy in development of building integrated photovoltaic systems.

MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates

NASA Astrophysics Data System (ADS)

Ludewig, P.; Reinhard, S.; Jandieri, K.; Wegele, T.; Beyer, A.; Tapfer, L.; Volz, K.; Stolz, W.

2016-03-01

High-quality, pseudomorphically strained Ga(NAsP)/(BGa)(AsP)-multiple quantum well heterostructures (MQWH) have been deposited on exactly oriented (001) Si-substrate by metal organic vapour phase epitaxy (MOVPE) in a wide temperature range between 525 °C and 700 °C. The individual atomic incorporation efficiencies, growth rates as well as nanoscale material properties have been clarified by applying detailed high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL) spectroscopy and high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) studies. An almost constant N-incorporation efficiency is obtained for a wide growth temperature range from 550 °C up to 650 °C. The P-incorporation is steadily increasing with increasing growth temperature reaching values at high temperatures in excess of the applied gas phase ratio. While the lower interface from the binary GaP- to the quaternary Ga(NAsP)-material system is very sharp, the upper interface is significantly rougher with a roughness scale of ±0.43 nm in quantum well thickness variation at a growth temperature of 525 °C. This roughness scale increases steadily with increasing growth temperature. No indication of any phase separation effects is detected in the Ga(NAsP)-material system even at the highest growth temperature of 700 °C. The obtained experimental results are briefly discussed with respect to the anticipated metastable character of the novel dilute-nitride Ga(NAsP)-material system grown lattice-matched to (001) Si-substrate.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films

NASA Astrophysics Data System (ADS)

Zhang, Fabi; Li, Haiou; Cui, Yi-Tao; Li, Guo-Ling; Guo, Qixin

2018-04-01

The optical properties and band structure evolution from amorphous to crystalline Ga2O3 films was investigated in this work. Amorphous and crystalline Ga2O3 films were obtained by changing the growth substrate temperatures of pulsed laser deposition and the crystallinity increase with the rising of substrate temperature. The bandgap value and ultraviolet emission intensity of the films increase with the rising of crystallinity as observed by means of spectrophotometer and cathodoluminescence spectroscopy. Abrupt bandgap value and CL emission variations were observed when amorphous to crystalline transition took place. X-ray photoelectron spectroscopy core level spectra reveal that more oxygen vacancies and disorders exist in amorphous Ga2O3 film grown at lower substrate temperature. The valence band spectra of hard X-ray photoelectron spectroscopy present the main contribution from Ga 4sp for crystalline film deposited at substrate temperature of 500 oC, while extra subgap states has been observed in amorphous film deposited at 300 oC. The oxygen vacancy and the extra subgap density of states are suggested to be the parts of origin of bandgap and CL spectra variations. The experimental data above yields a realistic picture of optical properties and band structure variation for the amorphous to crystalline transition of Ga2O3 films.

Emissions of biogenic volatile organic compounds from litter are coupled with changes in the microbial community composition

NASA Astrophysics Data System (ADS)

Hagel Svendsen, Sarah; Schostag, Morten; Voriskova, Jana; Kramshøj, Magnus; Priemé, Anders; Suhr Jacobsen, Carsten; Rinnan, Riikka

2017-04-01

Emissions of biogenic volatile organic compounds (BVOCs) from natural ecosystems have significant impact on atmospheric chemistry and belowground chemical processes. Most attention has been given to emissions from plants. However, several studies have found that soil, and especially the decomposing leaf and needle litter, emits substantial amounts of BVOCs. The contribution of litter to ecosystem BVOC emissions may be increasingly significant in the Arctic, where the living plant biomass is low, and the amount of litter increasing due to the expansion of deciduous vegetation in response to climate change. It is known that the types and amounts of BVOCs emitted from the soil are highly dependent on the microbial community composition and the type of substrate. In this study we measured emissions of BVOCs from the leaf litter of common arctic plant species at different temperatures. The BVOC measurements were coupled with an analysis of the relative abundance of dominating bacterial species (determined as operational taxonomic units, OTUs). Leaf litter from evergreen Cassiope tetragona and two species of deciduous Salix were collected from two arctic locations; one in the High Arctic and one in the Low Arctic. The litter was incubated in dark at 5 ?C. Over an eight week period the temperature was increased 7 ?C every two weeks, giving temperature incubations at 5 ?C, 12 ?C, 19 ?C and 26 ?C. Emissions of BVOCs from the litter were sampled in adsorbent cartridges weekly and analyzed using gas chromatography-mass spectrometry. The relative abundance of bacteria was determined at the end of the incubation at each temperature using DNA sequencing. Results showed that emissions of BVOCs belonging to different chemical functional groups responded differently to increasing temperatures and were highly dependent on the type of substrate. For instance, terpenoid emissions from the Cassiope litter increased with increasing temperature, whereas the emissions from the Salix litter decreased. Likewise, the relative abundance of bacteria depended on temperature and the type of substrate. Especially the actinobacteria showed strong increasing trends with increasing temperature in the Salix litter. Acidobacteria had much higher relative abundance in the Cassiope litter than in the Salix litter. Multivariate analyses were used to assess potential links between the BVOC and bacterial abundance datasets. Similar patterns in the BVOC emissions and bacterial community composition at different temperatures and for different substrates suggest that the differences in BVOC emissions, at least to some extent, are driven by changes in the microbial community composition.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F.

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitivemore » substrates.« less

Reflectance of evaporated rhenium and tungsten films in the vacuum ultraviolet from 300 to 2000 A.

NASA Technical Reports Server (NTRS)

Cox, J. T.; Hass, G.; Ramsey, J. B.; Hunter, W. R.

1972-01-01

Discussion of the dependence of the reflectance of Re and W on the substrate temperature during deposition, film thickness, and aging during exposure to air. Re and W of 99.99% purity were evaporated with a 6-kW fine-focused electron gun and deposited on glass and fused quartz plates of various temperatures ranging from 40 to 500 C. With Re, films of highest reflectance were obtained by evaporation onto unheated substrates, whereas with W, heating of the substrate greatly increased the reflectance of the deposited films. For both metals, the reflectance losses during extended exposure to air remained rather small, indicating that the oxide films formed on both film materials at room temperature were very thin.

CTAB assisted growth and characterization of nanocrystalline CuO films by ultrasonic spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Singh, Iqbal; Kaur, Gursharan; Bedi, R. K.

2011-09-01

An aqueous solution of cupric nitrate trihydrate (Cu(NO 3) 2·3H 2O) modified with cetyltrimetylammonium bromide (CTAB) is used to deposit CuO films on glass substrate by chemical spray pyrolysis technique. The thermal analysis shows that the dried CTAB doped precursor decomposes by an exothermic reaction and suggests that minimum substrate temperature for film deposition should be greater than 270 °C. X-ray diffraction (XRD) studies indicate the formation of monoclinic CuO with preferential orientation along (0 0 2) plane for all film samples. The CTAB used as cationic surfactant in precursor results in the suppression of grain growth in films along the (1 1 0), (0 2 0) and (2 2 0) crystal planes of CuO. Surfactant modified films showed an increase in crystallite size of 14 nm at substrate temperature of 300 °C. The scanning electron micrographs (FESEM) confirm the uniform distribution of facets like grains on the entire area of substrate. CTAB modified films show a significant reduction in the particle agglomeration. Electrical studies of the CuO films deposited at substrate temperature of 300 °C with and without surfactant reveal that the CTAB doping increase the activation energy of conduction by 0.217 eV and room temperature response to ammonia by 9%. The kinetics of the ammonia gas adsorption on the film surface follows the Elovich and Diffusion models.

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, D. H.; Das Arulsamy, A.; Rider, A. E.

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si{sup 3+} and Si{sup 1+} ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nmmore » size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si{sup 1+} ions in a low substrate temperature range (227-327 deg. C). As low substrate temperatures ({<=}500 deg. C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.« less

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

NASA Astrophysics Data System (ADS)

Seo, D. H.; Rider, A. E.; Das Arulsamy, A.; Levchenko, I.; Ostrikov, K.

2010-01-01

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si3+ and Si1+ ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nm size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si1+ ions in a low substrate temperature range (227-327 °C). As low substrate temperatures (≤500 °C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.

Deposition of Electrically Conductive Coatings on Castable Polyurethane Elastomers by the Flame Spraying Process

NASA Astrophysics Data System (ADS)

Ashrafizadeh, H.; McDonald, A.; Mertiny, P.

2016-02-01

Deposition of metallic coatings on elastomeric polymers is a challenging task due to the heat sensitivity and soft nature of these materials and the high temperatures in thermal spraying processes. In this study, a flame spraying process was employed to deposit conductive coatings of aluminum-12silicon on polyurethane elastomers. The effect of process parameters, i.e., stand-off distance and air added to the flame spray torch, on temperature distribution and corresponding effects on coating characteristics, including electrical resistivity, were investigated. An analytical model based on a Green's function approach was employed to determine the temperature distribution within the substrate. It was found that the coating porosity and electrical resistance decreased by increasing the pressure of the air injected into the flame spray torch during deposition. The latter also allowed for a reduction of the stand-off distance of the flame spray torch. Dynamic mechanical analysis was performed to investigate the effect of the increase in temperature within the substrate on its dynamic mechanical properties. It was found that the spraying process did not significantly change the storage modulus of the polyurethane substrate material.

Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

NASA Astrophysics Data System (ADS)

Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

2009-02-01

The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

Effect of film thickness on soft magnetic behavior of Fe2CoSi Heusler alloy for spin transfer torque device applications

NASA Astrophysics Data System (ADS)

Asvini, V.; Saravanan, G.; Kalaiezhily, R. K.; Raja, M. Manivel; Ravichandran, K.

2018-04-01

Fe2CoSi based Heusler alloy thin films were deposited on Si (111) wafer (substrate) of varying thickness using ultra high vacuum DC magnetron sputtering. The structural behavior was observed and found to be hold the L21 structure. The deposited thin films were characterized magnetic properties using vibrating sample magnetometer; the result shows a very high saturated magnetization (Ms), lowest coercivity (Hc), high curie transition temperature (Tc) and low hysteresis loss. Thin film thickness of 75 nm Fe2CoSi sample maintained at substrate temperature 450°C shows the lowest coercivity (Hc=7 Oe). In general, Fe2CoSi Heusler alloys curie transition temperature is very high, due to strong exchange interaction between the Fe and Co atoms. The substrate temperature was kept constant at 450°C for varying thickness (e.g. 5, 20, 50, 75 and 100 nm) of thin film sample. The 75 nm thickness thin film sample shows well crystallanity and good magnetic properties, further squareness ratio in B-H loop increases with the increase in film thickness.

Boiling regimes of impacting drops on a heated substrate under reduced pressure

NASA Astrophysics Data System (ADS)

van Limbeek, Michiel A. J.; Hoefnagels, Paul B. J.; Shirota, Minori; Sun, Chao; Lohse, Detlef

2018-05-01

We experimentally investigate the boiling behavior of impacting ethanol drops on a heated smooth sapphire substrate at pressures ranging from P =0.13 bar to atmospheric pressure. We employ frustrated total internal reflection imaging to study the wetting dynamics of the contact between the drop and the substrate. The spreading drop can be in full contact (contact boiling), it can partially touch (transition boiling), or the drop can be fully levitated (Leidenfrost boiling). We show that the temperature of the boundary between contact and transition boiling shows at most a weak dependence on the impact velocity, but a significant decrease with decreasing ambient gas pressure. A striking correspondence is found between the temperature of this boundary and the static Leidenfrost temperature for all pressures. We therefore conclude that both phenomena share the same mechanism and are dominated by the dynamics taking place at the contact line. On the other hand, the boundary between transition boiling and Leidenfrost boiling, i.e., the dynamic Leidenfrost temperature, increases for increasing impact velocity for all ambient gas pressures. Moreover, the dynamic Leidenfrost temperature coincides for pressures between P =0.13 and 0.54 bar, whereas for atmospheric pressure the dynamic Leidenfrost temperature is slightly elevated. This indicates that the dynamic Leidenfrost temperature is at most weakly dependent on the enhanced evaporation by the lower saturation temperature of the liquid.

Expanding Upon the MEMS Framework: How Temperature Impacts Organo-Mineral Interactions

NASA Astrophysics Data System (ADS)

Smith, K.; Waring, B. G.

2017-12-01

Microbial substrate use efficiency (SUE; the fraction of substrate carbon (C) incorporated into biomass vs. respired) affects the development of soil organic matter (SOM). An emerging theoretical model (the Microbial Efficiency-Matrix Stabilization (MEMS) framework) posits that microbial SUE acts as a filter for plant litter inputs, whereby a larger proportion of microbial products are synthesized from labile (and not recalcitrant) plant substrates. Thus, SOM stability depends on both the efficiency of microbial anabolism as well as the degree to which microbial products stabilize within the mineral soil matrix. In this study, we performed a laboratory microcosm experiment using diverse soils collected in Utah to test how substrate complexity, soil mineralogy, and temperature interact to control SOM formation. Prior to microcosm setup, we first removed organic C from our field soils by washing with concentrated hypochlorite solution. Microcosms were then assembled by mixing C-free soil with one of three substrates (glucose, cellulose, and lignin), and placed in incubators set to different temperatures (18°, 28°, and 38°C). Respiration rates were then estimated by periodically sampling headspace CO2 concentrations in each microcosm. Prior to C removal, we found that field soils exhibited distinct properties ranging from clay-rich vertisols (55:27:18, sand:silt:clay; 1.1% C), to loamy-sand entisols (85:11:4; 0.3% C), and organic-rich mollisols (79:17:4; 1.7% C). In the incubation experiment, consistent with enzyme kinetics theory, respiration rates increased as a function of incubation temperature (p < 0.0001), and that the temperature response of respiration was dependent on substrate (p < 0.0001), with the lignin treatment exhibiting the greatest temperature sensitivity. While respiration was significantly lower in the mollisol treatment (p < 0.0001), other soil effects (including interactions with temperature and substrate) were less clear. Together these results build upon the MEMS framework by highlighting the importance of organo-mineral interactions and temperature as controls on soil C cycling.

Catalytic properties of thermophilic lactate dehydrogenase and halophilic malate dehydrogenase at high temperature and low water activity.

PubMed

Hecht, K; Wrba, A; Jaenicke, R

1989-07-15

Thermophilic lactate dehydrogenases from Thermotoga maritima and Bacillus stearothermophilus are stable up to temperature limits close to the optimum growth temperature of their parent organisms. Their catalytic properties are anomalous in that Km shows a drastic increase with increasing temperature. At low temperatures, the effect levels off. Extreme halophilic malate dehydrogenase from Halobacterium marismortui exhibits a similar anomaly. Increasing salt concentration (NaCl) leads to an optimum curve for Km, oxaloacctate while Km, NADH remains constant. Previous claims that the activity of halophilic malate dehydrogenase shows a maximum at 1.25 M NaCl are caused by limiting substrate concentration; at substrate saturation, specific activity of halophilic malate dehydrogenase reaches a constant value at ionic strengths I greater than or equal to 1 M. Non-halophilic (mitochondrial) malate dehydrogenase shows Km characteristics similar to those observed for the halophilic enzyme. The drastic decrease in specific activity of the mitochondrial enzyme at elevated salt concentrations is caused by the salt-induced increase in rigidity of the enzyme, rather than gross structural changes.

Light-Weight Low-Loss Dielectric Polymer Composites Containing Carbon Nanostructure

DTIC Science & Technology

2014-10-17

increases in temperature. Subsequent thermal breakdown and carbonization of the polyurethane coating and polyimide substrate significantly reduced the RF...measurements through HD-GNR films. For the highly uniform films produced in separate experiments on a glass substrate with sufficient thermal conductivity ...further carbonized the polyurethane- coated polyimide substrate. This was attributed to the electromagnetic and the resulting thermal energy

Soil warming increases metabolic quotients of soil microorganisms without changes in temperature sensitivity of soil respiration

NASA Astrophysics Data System (ADS)

Marañón-Jiménez, Sara; Soong, Jenniffer L.; Leblans, Niki I. W.; Sigurdsson, Bjarni D.; Dauwe, Steven; Fransen, Erik; Janssens, Ivan A.

2017-04-01

Increasing temperatures can accelerate soil organic matter (SOM) decomposition and release large amounts of CO2 to the atmosphere, potentially inducing climate change feedbacks. Alterations to the temperature sensitivity and metabolic pathways of soil microorganisms in response to soil warming can play a key role in these soil carbon (C) losses. Here, we present results of an incubation experiment using soils from a geothermal gradient in Iceland that have been subjected to different intensities of soil warming (+0, +1, +3, +5, +10 and +20 °C above ambient) over seven years. We hypothesized that 7 years of soil warming would led to a depletion of labile organic substrates, with a subsequent decrease of the "apparent" temperature sensitivity of soil respiration. Associated to this C limitation and more sub-optimal conditions for microbial growth, we also hypothesized increased microbial metabolic quotients (soil respiration per unit of microbial biomass), which is associated with increases in the relative amount of C invested into catabolic pathways along the warming gradient. Soil respiration and basal respiration rates decreased with soil warming intensity, in parallel with a decline in soil C availability. Contrasting to our first hypothesis, we did not detect changes in the temperature sensitivity of soil respiration with soil warming or on the availability of nutrients and of labile C substrates at the time of incubation. However, in agreement to our second hypothesis, microbial metabolic quotients (soil respiration per unit of microbial biomass) increased at warmer temperatures, while the C retained in biomass decreased as substrate became limiting. Long-term (7 years) temperature increases thus triggered a change in the metabolic functioning of the soil microbial communities towards increasing energy costs for maintenance or resource acquisition, thereby lowering the capacity of C retention and stabilization of warmed soils. These results highlight the need to incorporate the potential changes in microbial physiological functioning into models, in order to accurately predict future changes in soil C stocks in response to global warming.

Simulation of thermal stress in Er2O3 and Al2O3 tritium penetration barriers by finite-element analysis

NASA Astrophysics Data System (ADS)

Ze, LIU; Guogang, YU; Anping, HE; Ling, WANG

2017-09-01

The physical vapor deposition method is an effective way to deposit Al2O3 and Er2O3 on 316L stainless steel substrates acting as tritium permeation barriers in a fusion reactor. The distribution of residual thermal stress is calculated both in Al2O3 and Er2O3 coating systems with planar and rough substrates using finite element analysis. The parameters influencing the thermal stress in the sputter process are analyzed, such as coating and substrate properties, temperature and Young’s modulus. This work shows that the thermal stress in Al2O3 and Er2O3 coating systems exhibit a linear relationship with substrate thickness, temperature and Young’s modulus. However, this relationship is inversed with coating thickness. In addition, the rough substrate surface can increase the thermal stress in the process of coating deposition. The adhesive strength between the coating and the substrate is evaluated by the shear stress. Due to the higher compressive shear stress, the Al2O3 coating has a better adhesive strength with a 316L stainless steel substrate than the Er2O3 coating. Furthermore, the analysis shows that it is a useful way to improve adhesive strength with increasing interface roughness.

Yield and cold storage of Trichoderma conidia is influenced by substrate pH and storage temperature.

PubMed

Steyaert, Johanna M; Chomic, Anastasia; Nieto-Jacobo, Maria; Mendoza-Mendoza, Artemio; Hay, Amanda J; Braithwaite, Mark; Stewart, Alison

2017-05-01

In this study we examined the influence of the ambient pH during morphogenesis on conidial yield of Trichoderma sp. "atroviride B" LU132 and T. hamatum LU593 and storage at low temperatures. The ambient pH of the growth media had a dramatic influence on the level of Trichoderma conidiation and this was dependent on the strain and growth media. On malt-extract agar, LU593 yield decreased with increasing pH (3-6), whereas yield increased with increasing pH for LU132. During solid substrate production the reverse was true for LU132 whereby yield decreased with increasing pH. The germination potential of the conidia decreased significantly over time in cold storage and the rate of decline was a factor of the strain, pH during morphogenesis, growth media, and storage temperature. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Modification of Surface Density of a Porous Medium

NASA Technical Reports Server (NTRS)

Stackpoole, Margaret M. (Inventor); Espinoza, Christian (Inventor)

2016-01-01

A method for increasing density of a region of a porous, phenolic bonded ("PPB") body adjacent to a selected surface to increase failure tensile strength of the adjacent region and/or to decrease surface recession at elevated temperatures. When the surface-densified PPB body is brought together with a substrate, having a higher failure tensile strength, to form a composite body with a PPB body/substrate interface, the location of tensile failure is moved to a location spaced apart from the interface, the failure tensile strength of the PPB body is increased, and surface recession of the material at elevated temperature is reduced. The method deposits and allows diffusion of a phenolic substance on the selected surface. The PPB body and the substrate may be heated and brought together to form the composite body. The phenolic substance is allowed to diffuse into the PPB body, to volatilize and to cure, to provide a processed body with an increased surface density.

Growth of tungsten oxide nanostructures by chemical solution deposition

NASA Astrophysics Data System (ADS)

Jin, L. H.; Bai, Y.; Li, C. S.; Wang, Y.; Feng, J. Q.; Lei, L.; Zhao, G. Y.; Zhang, P. X.

2018-05-01

Tungsten oxide nanostructures were fabricated on LaAlO3 (00l) substrates by a simple chemical solution deposition. The decomposition behavior and phase formation of ammonium tungstate precursor were characterized by thermal analysis and X-ray diffraction. Moreover, the morphology and chemical state of nanostructures were analyzed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectra. The effects of crystallization temperature on the formation of nanodots and nanowires were investigated. The results indicated that the change of nanostructures had close relationship with the crystallization temperature during the chemical solution deposition process. Under higher crystallization temperature, the square-like dots transformed into the dome-like nanodots and nanowires. Moreover high density well-ordered nanodots could be obtained on the substrate with the further increase of crystallization temperature. It also suggested that this simple chemical solution process could be used to adjust the nanostructures of tungsten oxide compounds on substrate.

Lower-Conductivity Ceramic Materials for Thermal-Barrier Coatings

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Zhu, Dongming

2006-01-01

Doped pyrochlore oxides of a type described below are under consideration as alternative materials for high-temperature thermal-barrier coatings (TBCs). In comparison with partially-yttria-stabilized zirconia (YSZ), which is the state-of-the-art TBC material now in commercial use, these doped pyrochlore oxides exhibit lower thermal conductivities, which could be exploited to obtain the following advantages: For a given difference in temperature between an outer coating surface and the coating/substrate interface, the coating could be thinner. Reductions in coating thicknesses could translate to reductions in weight of hot-section components of turbine engines (e.g., combustor liners, blades, and vanes) to which TBCs are typically applied. For a given coating thickness, the difference in temperature between the outer coating surface and the coating/substrate interface could be greater. For turbine engines, this could translate to higher operating temperatures, with consequent increases in efficiency and reductions in polluting emissions. TBCs are needed because the temperatures in some turbine-engine hot sections exceed the maximum temperatures that the substrate materials (superalloys, Si-based ceramics, and others) can withstand. YSZ TBCs are applied to engine components as thin layers by plasma spraying or electron-beam physical vapor deposition. During operation at higher temperatures, YSZ layers undergo sintering, which increases their thermal conductivities and thereby renders them less effective as TBCs. Moreover, the sintered YSZ TBCs are less tolerant of stress and strain and, hence, are less durable.

Thick, low-stress films, and coated substrates formed therefrom

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1991-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon

NASA Astrophysics Data System (ADS)

Ayouchi, R.; Martin, F.; Leinen, D.; Ramos-Barrado, J. R.

2003-01-01

Structural, morphological, optical and electrical properties of ZnO thin films prepared by chemical spray pyrolysis from zinc acetate (Zn(CH 3COO) 2 2H 2O) aqueous solutions, on polished Si(1 0 0), and fused silica substrates for optical characterization, have been studied in terms of deposition time and substrate temperature. The growth of the films present three regimes depending on the substrate temperature, with increasing, constant and decreasing growth rates at lower, middle, and higher-temperature ranges, respectively. Growth rate higher than 15 nm min -1 can be achieved at Ts=543 K. ZnO film morphological and electrical properties have been related to these growth regimes. The films have been characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.

Effects of substrate temperatures and deposition rates on properties of aluminum fluoride thin films in deep-ultraviolet region.

PubMed

Sun, Jian; Li, Xu; Zhang, Weili; Yi, Kui; Shao, Jianda

2012-12-10

Aluminum fluoride (AlF(3)) is a low-refractive-index material widely used in coatings for deep-ultraviolet (DUV) optical systems, especially 193 nm laser systems. Low optical loss and stability are essential for film application. In this study, AlF(3)> thin films were prepared by thermal evaporation with a resistive heating boat. The effects of substrate temperatures and deposition rates on the optical properties in vacuum and in air, composition, and microstructures were discussed respectively. In vacuum the deposition parameters directly influenced the microstructures that determined the refractive index. When the films were exposed to air, aluminum oxide (Al(2)O(3)) formed in the films with water adsorption. Thus the refractive index increased and a nonmonotonic changing trend of the refractive index with substrate temperature was observed. The Al(2)O(3) was also found to be conductive to reducing absorption loss. AlF(3) films prepared at a high substrate temperature and deposition rate could yield stable structures with large optical loss.

On sub-T(g) dewetting of nanoconfined liquids and autophobic dewetting of crystallites.

PubMed

Souda, Ryutaro

2012-03-28

The glass transition temperature (T(g)) of thin films is reduced by nanoconfinement, but it is also influenced by the free surface and substrate interface. To gain more insights into their contributions, dewetting behaviors of n-pentane, 3-methylpentane, and toluene films are investigated on various substrates as functions of temperature and film thickness. It is found that monolayers of these molecules exhibit sub-T(g) dewetting on a perfluoro-alkyl modified Ni substrate, which is attributable to the evolution of a 2D liquid. The onset temperature of dewetting increases with film thickness because fluidity evolves via cooperative motion of many molecules; sub-T(g) dewetting is observed for films thinner than 5 monolayers. In contrast, monolayers wet substrates of graphite, silicon, and amorphous solid water until crystallization occurs. The crystallites exhibit autophobic dewetting on the substrate covered with a wetting monolayer. The presence of premelting layers is inferred from the fact that n-pentane crystallites disappear on amorphous solid water via intermixing. Thus, the properties of quasiliquid formed on the crystallite surface differ significantly from those of the 2D liquid formed before crystallization.

Organic photochemical storage of solar energy. Progress report, February 1, 1979-January 31, 1980

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, G. II

1980-02-01

Study of valence isomerization of organic compounds has focused on two mechanisms of photosensitization involving either electron donor-acceptor interaction or energy transfer. The quenching of fluorescent sensitizers by isomerizable substrates results in the formation of excited complexes. These sensitizer-substrate pairs are highly polarized, leading to changes in bond order for the substrates. For several substrates such as quadricyclene, hexamethyldewarbenzene, and a nonbornadiene derivative, this perturbation results in efficient valence isomerization. Isomerization observed on irradiation of charge transfer complexes of isomerizable substrates is consistent with a similar exciplex - template mechanism. The energy transfer mechanism of photosensitization has been studied bymore » measuring the temperature dependence of quantum yield for isomerization of dimethyl norbornadiene-2,3-dicarboxylate sensitized by benzanthrone. From temperature and quencher concentration profiles quenching constants have been obtained which are consistent with an endoergic triplet energy transfer mechanism. The thermal upconversion of the low energy triplet of benzanthrone results in a threefold increase in isomerization quantum yield over a 90/sup 0/ temperature range.« less

Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

2016-11-01

For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

Numerical and Experimental Approaches Toward Understanding Lava Flow Heat Transfer

NASA Astrophysics Data System (ADS)

Rumpf, M.; Fagents, S. A.; Hamilton, C.; Crawford, I. A.

2013-12-01

We have performed numerical modeling and experimental studies to quantify the heat transfer from a lava flow into an underlying particulate substrate. This project was initially motivated by a desire to understand the transfer of heat from a lava flow into the lunar regolith. Ancient regolith deposits that have been protected by a lava flow may contain ancient solar wind, solar flare, and galactic cosmic ray products that can give insight into the history of our solar system, provided the records were not heated and destroyed by the overlying lava flow. In addition, lava-substrate interaction is an important aspect of lava fluid dynamics that requires consideration in lava emplacement models Our numerical model determines the depth to which the heat pulse will penetrate beneath a lava flow into the underlying substrate. Rigorous treatment of the temperature dependence of lava and substrate thermal conductivity and specific heat capacity, density, and latent heat release are imperative to an accurate model. Experiments were conducted to verify the numerical model. Experimental containers with interior dimensions of 20 x 20 x 25 cm were constructed from 1 inch thick calcium silicate sheeting. For initial experiments, boxes were packed with lunar regolith simulant (GSC-1) to a depth of 15 cm with thermocouples embedded at regular intervals. Basalt collected at Kilauea Volcano, HI, was melted in a gas forge and poured directly onto the simulant. Initial lava temperatures ranged from ~1200 to 1300 °C. The system was allowed to cool while internal temperatures were monitored by a thermocouple array and external temperatures were monitored by a Forward Looking Infrared (FLIR) video camera. Numerical simulations of the experiments elucidate the details of lava latent heat release and constrain the temperature-dependence of the thermal conductivity of the particulate substrate. The temperature-dependence of thermal conductivity of particulate material is not well known, especially at high temperatures. It is important to have this property well constrained as substrate thermal conductivity is the greatest influence on the rate of lava-substrate heat transfer. At Kilauea and Mauna Loa Volcanoes, Hawaii, and other volcanoes that threaten communities, lava may erupt over a variety of substrate materials including cool lava flows, volcanic tephra, soils, sand, and concrete. The composition, moisture, organic content, porosity, and grain size of the substrate dictate the thermophysical properties, thus affecting the transfer of heat from the lava flow into the substrate and flow mobility. Particulate substrate materials act as insulators, subduing the rate of heat transfer from the flow core. Therefore, lava that flows over a particulate substrate will maintain higher core temperatures over a longer period, enhancing flow mobility and increasing the duration and aerial coverage of the resulting flow. Lava flow prediction models should include substrate specification with temperature dependent material property definitions for an accurate understanding of flow hazards.

Improved FCG-1 cell technology

NASA Astrophysics Data System (ADS)

Breault, R. D.; Congdon, J. V.; Coykendall, R. D.; Luoma, W. L.

1980-10-01

Fuel cell performance in the ribbed substrate cell configuration consistent with that projected for a commercial power plant is demonstrated. Tests were conducted on subscale cells and on two 20 cell stacks of 4.8 MW demonstrator size cell components. These tests evaluated cell stack materials, processes, components, and assembly configurations. The first task was to conduct a component development effort to introduce improvements in 3.7 square foot, ribbed substrate acid cell repeating parts which represented advances in performance, function, life, and lower cost for application in higher pressure and temperature power plants. Specific areas of change were the electrode substrate, catalyst, matrix, seals, separator plates, and coolers. Full sized ribbed substrate stack components incorporating more stable materials were evaluated at increased pressure (93 psia) and temperature (405 F) conditions. Two 20 cell stacks with a 3.7 square feet, ribbed substrate cell configuration were tested.

Changes in the temperature sensitivity of SOM decomposition with grassland succession: implications for soil C sequestration.

PubMed

Nianpeng, He; Ruomeng, Wang; Yang, Gao; Jingzhong, Dai; Xuefa, Wen; Guirui, Yu

2013-12-01

Understanding the temperature sensitivity (Q 10) of soil organic matter (SOM) decomposition is important for predicting soil carbon (C) sequestration in terrestrial ecosystems under warming scenarios. Whether Q 10 varies predictably with ecosystem succession and the ways in which the stoichiometry of input SOM influences Q 10 remain largely unknown. We investigate these issues using a grassland succession series from free-grazing to 31-year grazing-exclusion grasslands in Inner Mongolia, and an incubation experiment performed at six temperatures (0, 5, 10, 15, 20, and 25°C) and with four substrates: control (CK), glucose (GLU), mixed grass leaf (GRA), and Medicago falcata leaf (MED). The results showed that basal soil respiration (20°C) and microbial biomass C (MBC) logarithmically decreased with grassland succession. Q 10 decreased logarithmically from 1.43 in free-grazing grasslands to 1.22 in 31-year grazing-exclusion grasslands. Q 10 increased significantly with the addition of substrates, and the Q 10 levels increased with increase in N:C ratios of substrate. Moreover, accumulated C mineralization was controlled by the N:C ratio of newly input SOM and by incubation temperature. Changes in Q 10 with grassland ecosystem succession are controlled by the stoichiometry of newly input SOM, MBC, and SOM quality, and the combined effects of which could partially explain the mechanisms underlying soil C sequestration in the long-term grazing-exclusion grasslands in Inner Mongolia, China. The findings highlight the effect of substrate stoichiometry on Q 10 which requires further study.

Temperature Dependence of Attenuation of Coplanar Waveguide on 4H High Resistivity SIC Through 540C

NASA Technical Reports Server (NTRS)

Ponchak, G. E.; Schwartz, Z.; Alterovitz, S. A.; Downey, A. N.; Freeman, J. C.

2003-01-01

For the first time, the temperature and frequency dependence of the attenuation of a Coplanar Waveguide (CPW) on 4H, High Resistivity Sic substrate is reported. The low frequency attenuation increases by 2 dB/cm at 500 C and the high frequency attenuation increases by 3.3 dB/cm at 500 C compared to room temperature.

Substrate-dependent temperature sensitivity of soil organic matter decomposition

NASA Astrophysics Data System (ADS)

Myachina, Olga; Blagodatskaya, Evgenia

2015-04-01

Activity of extracellular enzymes responsible for decomposition of organics is substrate dependent. Quantity of the substrate is the main limiting factor for enzymatic or microbial heterotrophic activity in soils. Different mechanisms of enzymes response to temperature suggested for low and high substrate availability were never proved for real soil conditions. We compared the temperature responses of enzymes-catalyzed reactions in soils. Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation.

SOFI/Substrate integrity testing for cryogenic propellant tanks at extreme thermal gradient conditions

NASA Astrophysics Data System (ADS)

Haynes, M.; Fabian, P.

2015-12-01

Liquid propellant tank insulation for space flight requires low weight as well as high insulation factors. Use of Spray-On Foam Insulation (SOFI) is an accepted, cost effective technique for insulating a single wall cryogenic propellant tank and has been used extensively throughout the aerospace industry. Determining the bond integrity of the SOFI to the metallic substrate as well as its ability to withstand the in-service strains, both mechanical and thermal, is critical to the longevity of the insulation. This determination has previously been performed using highly volatile, explosive cryogens, which increases the test costs enormously, as well as greatly increasing the risk to both equipment and personnel. CTD has developed a new test system, based on a previous NASA test that simulates the mechanical and thermal strains associated with filling a large fuel tank with a cryogen. The test enables a relatively small SOFI/substrate sample to be monitored for any deformations, delaminations, or disjunctures during the cooling and mechanical straining process of the substrate, and enables the concurrent application of thermal and physical strains to two specimens at the same time. The thermal strains are applied by cooling the substrate to the desired cryogen temperature (from 4 K to 250 K) while maintaining the outside surface of the SOFI foam at ambient conditions. Multiple temperature monitoring points are exercised to ensure even cooling across the substrate, while at the same time, surface temperatures of the SOFI can be monitored to determine the heat flow. The system also allows for direct measurement of the strains in the substrate during the test. The test system as well as test data from testing at 20 K, for liquid Hydrogen simulation, will be discussed.

Oxygen plasma ashing effects on aluminum and titanium space protective coatings

NASA Technical Reports Server (NTRS)

Synowicki, R.; Kubik, R. D.; Hale, J. S.; Peterkin, Jane; Nafis, S.; Woollam, John A.; Zaat, S.

1991-01-01

Using variable angle spectroscopic ellipsometry and atomic force microscopy (AFM), the surface roughness and oxidation of aluminum and titanium thin films have been studied as a function of substrate deposition temperature and oxygen plasma exposure. Increasing substrate deposition temperatures affect film microstructure by greatly increasing grain size. Short exposures to an oxygen plasma environment produce sharp spikes rising rapidly above the surface as seen by AFM. Ellipsometric measurements were made over a wide range of plasma exposure times, and results at longer exposure times suggest that the surface is greater than 30% void. This is qualitatively verified by the AFM images.

Low temperature growth of ZnO nanorods array via solution-immersion on TiO2 seed layer

NASA Astrophysics Data System (ADS)

Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

2018-05-01

In this work, TiO2:ZNR thin films were successfully fabricated on glass substrates at low temperatures of 75 to 90°C. The substrates were coated with titanium dioxide (TiO2) using sol-gel spin coating, which act as seed layer to grow zinc oxide nanorods (ZNR) by solution-immersion method. At 90 and 95° C, ZNR with hexagonal tip are well dispersed without any aggregation and exhibit more uniform nanorods array as observed using FESEM. The diffraction peak intensity of the (0 0 2)-plane increased as the temperature increased, indicating improved orientation in the c-axis direction of the ZNR as detected in XRD patterns. From UV-Vis absorbance spectra, it was found that the samples has higher absorption properties at middle range of immersion temperatures; 80, 85 and 90°C.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

The effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

NASA Astrophysics Data System (ADS)

Wang, Cai-Feng; Li, Qing-Shan; Hu, Bo; Li, Wei-Bing

2009-06-01

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I-V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

Cryo-scatter measurements of beryllium

NASA Astrophysics Data System (ADS)

Lippey, Barret; Krone-Schmidt, Wilfried

1991-12-01

Bi-directional Reflection Distribution Function measurements were performed as a function of cryogenic temperature for various substrates. Substrates investigated include HIPed and sputtered beryllium produced from different powders and by various manufacturing and polishing processes. In some samples investigated, the BRDF at 10.6 microns increased by a factor of 2 to 5 during cooling from 300 to 30 Kelvin. On repeated temperature cycling the change in BRDF appeared to be totally elastic. The cryo-scatter effect does not occur for all types of beryllium.

Direct-writing of copper-based micropatterns on polymer substrates using femtosecond laser reduction of copper (II) oxide nanoparticles

NASA Astrophysics Data System (ADS)

Mizoshiri, Mizue; Ito, Yasuaki; Sakurai, Junpei; Hata, Seiichi

2017-04-01

Copper (Cu)-based micropatterns were fabricated on polymer substrates using femtosecond laser reduction of copper (II) oxide (CuO) nanoparticles. CuO nanoparticle solution, which consisted of CuO nanoparticles, ethylene glycol as a reductant agent, and polyvinylpyrrolidone as a dispersant, was spin-coated on poly(dimethylsiloxane) (PDMS) substrates and was irradiated by focused femtosecond laser pulses to fabricate Cu-based micropatterns. When the laser pulses were raster-scanned onto the solution, CuO nanoparticles were reduced and sintered. Cu-rich and copper (I)-oxide (Cu2O)-rich micropatterns were formed at laser scanning speeds of 15 mm/s and 0.5 mm/s, respectively, and at a pulse energy of 0.54 nJ. Cu-rich electrically conductive micropatterns were obtained without significant damages on the substrates. On the other hand, Cu2O-rich micropatterns exhibited no electrical conductivity, indicating that microcracks were generated on the micropatterns by thermal expansion and shrinking of the substrates. We demonstrated a direct-writing of Cu-rich micro-temperature sensors on PDMS substrates using the foregoing laser irradiation condition. The resistance of the fabricated sensors increased with increasing temperature, which is consistent with that of Cu. This direct-writing technique is useful for fabricating Cu-polymer composite microstructures.

Temperature dependent dielectric behavior of sol-gel grown Y0.95Ca0.05MnO3/Si junction

NASA Astrophysics Data System (ADS)

Dhruv, Davit; Joshi, Zalak; Solanki, Sapana; Sagapariya, Khushal; Makwana, Pratima; Kansara, S. B.; Joshi, A. D.; Pandya, D. D.; Solanki, P. S.; Shah, N. A.

2017-05-01

We have successfully fabricated divalent doped Y0.95Ca0.05MnO3 film on (100) single crystalline n-type Si substrate by spin coating assisted chemical solution deposition technique. The X-ray diffraction (XRD) pattern of thin film depicts that the film has (h00) directional growth on substrate. Thin film possesses -1.4% compressive strain at the interface level and thin film thickness is found to be ˜ 78nm. Dielectric property of film has been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at temperatures 150 to 300K. Real dielectric permittivity decreases and imaginary dielectric permittivity increases with increasing applied frequency. Furthermore, at low temperatures, higher dielectric is observed in all the frequency range studied and it decreases with increasing temperature due to thermal excitation induced increased charge carrier movements across the film lattice. The relaxation mechanism of Y0.95Ca0.05MnO3 film has been understood through cole-cole plots.

Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1992-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

Changes in size of nano phase iron inclusions with temperature: Experimental simulation of space weathering effects at high temperature

NASA Astrophysics Data System (ADS)

Rout, S. S.; Moroz, L. V.; Stockhoff, T.; Baither, D.; Bischoff, A.; Hiesinger, H.

2011-10-01

The mean size of nano phase iron inclusions (npFe0), produced during the space weathering of iron-rich regolith of airless solar system bodies, significantly affects visible and near-infrared (VNIR) spectra. To experimentally simulate the change in the size of npFe0 inclusions with increasing temperature, we produced sputter film deposits on a silicon dioxide substrate by sputtering a pressed pellet prepared from fine olivine powder using 600V Ar+ ions. This silicon dioxide substrate covered with the deposit was later heated to 450°C for 24 hours in an oven under argon atmosphere. Initial TEM analysis of the unheated silicon dioxide substrate showed the presence of a ~ 50 nm-thick layer of an amorphous deposit with nano clusters that has not yet been identified.

Rubber friction: role of the flash temperature

NASA Astrophysics Data System (ADS)

Persson, B. N. J.

2006-08-01

When a rubber block is sliding on a hard rough substrate, the substrate asperities will exert time-dependent deformations of the rubber surface resulting in viscoelastic energy dissipation in the rubber, which gives a contribution to the sliding friction. Most surfaces of solids have roughness on many different length scales, and when calculating the friction force it is necessary to include the viscoelastic deformations on all length scales. The energy dissipation will result in local heating of the rubber. Since the viscoelastic properties of rubber-like materials are extremely strongly temperature dependent, it is necessary to include the local temperature increase in the analysis. At very low sliding velocity the temperature increase is negligible because of heat diffusion, but already for velocities of order 10-2 m s-1 the local heating may be very important. Here I study the influence of the local heating on the rubber friction, and I show that in a typical case the temperature increase results in a decrease in rubber friction with increasing sliding velocity for v>0.01 m s-1. This may result in stick-slip instabilities, and is of crucial importance in many practical applications, e.g. for tyre-road friction and in particular for ABS braking systems.

Structural and optical properties of tin disulphide thin films grown by flash evaporation

NASA Astrophysics Data System (ADS)

Banotra, Arun; Padha, Naresh

2018-04-01

Tin Disulphide thin films were deposited by Flash Evaporation method on corning Glass Substrate at different substrate temperatures. The deposited films were undertaken for Structural, Optical and compositional characterizations. Compositional analysis of the films exhibited decrease in the sulphur content enabling S/Sn ratio to vary from 2.05 to 1.32 with increasing substrate temperature. X-ray diffraction reveals amorphous nature of the as-deposited films with varying substrate temperatures. Optical measurements estimated from absorbance spectra suggest higher absorbance at λ≤500nm and higher transmission at λ≥500nm with bandgap changes from 2.45eV to 2.09eV. The 323K as-deposited films were undertaken for annealing which transforms the films into crystalline form corresponding to hexagonal SnS2 phase at 423K and above. However, the optical response for the annealed samples shows a higher transmission of 70% in the visible region which increases further in the Infrared region of the spectrum achieving maximum transmission upto 98%. This higher transmission in the Visible to Infrared region of the solar spectrum in amorphous as well as crystalline form makes the film suitable for their use as a window layer in the Solar Cell Design.

High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1992-05-01

High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

The Effect of Molybdenum Substrate Oxidation on Molybdenum Splat Formation

NASA Astrophysics Data System (ADS)

Wang, Jun; Li, Chang-Jiu

2018-01-01

Disk splats are usually observed when the deposition temperature exceeds the transition temperature, whereas thick oxide layer will reduce the adhesion resulting from high deposition temperature. In present study, single molybdenum splats were deposited onto polished molybdenum substrates with different preheating processes to clarify the effect of surface oxidation on the splat formation. Three substrate samples experienced three different preheating processes in an argon atmosphere. Two samples were preheated to 350 and 550 °C, and another sample was cooled to 350 °C after it was preheated to 550 °C. The chemistry and compositions of substrate surface were examined by XPS. The cross sections of splats were prepared by focus ion beam (FIB) and then characterized by SEM. Nearly disk-shaped splat with small fingers in the periphery was observed on the sample preheated to 350 °C. A perfect disk-shape splat was deposited at 550 °C. With the sample on the substrate preheated to 350 °C (cooling down from 550 °C), flower-shaped splat exhibited a central core and discrete periphery detached by some voids. The results of peeling off splats by carbon tape and the morphology of FIB sampled cross sections indicated that no effective bonding formed at the splat-substrate interface for the substrate ever heated to 550 °C, due to the increasing content of MoO3 on the preheated molybdenum surface.

Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, R. Subba; Sreedhar, A.; Uthanna, S., E-mail: uthanna@rediffmail.com

Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was inmore » the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.« less

Temperature response of denitrification and anaerobic ammonium oxidation rates and microbial community structure in Arctic fjord sediments.

PubMed

Canion, Andy; Overholt, Will A; Kostka, Joel E; Huettel, Markus; Lavik, Gaute; Kuypers, Marcel M M

2014-10-01

The temperature dependency of denitrification and anaerobic ammonium oxidation (anammox) rates from Arctic fjord sediments was investigated in a temperature gradient block incubator for temperatures ranging from -1 to 40°C. Community structure in intact sediments and slurry incubations was determined using Illumina SSU rRNA gene sequencing. The optimal temperature (Topt ) for denitrification was 25-27°C, whereas anammox rates were optimal at 12-17°C. Both denitrification and anammox exhibited temperature responses consistent with a psychrophilic community, but anammox bacteria may be more specialized for psychrophilic activity. Long-term (1-2 months) warming experiments indicated that temperature increases of 5-10°C above in situ had little effect on the microbial community structure or the temperature response of denitrification and anammox. Increases of 25°C shifted denitrification temperature responses to mesophilic with concurrent community shifts, and anammox activity was eliminated above 25°C. Additions of low molecular weight organic substrates (acetate and lactate) caused increases in denitrification rates, corroborating the hypothesis that the supply of organic substrates is a more dominant control of respiration rates than low temperature. These results suggest that climate-related changes in sinking particulate flux will likely alter rates of N removal more rapidly than warming. © 2014 Society for Applied Microbiology and John Wiley & Sons Ltd.

Out on a limb: Thermal microenvironments in the tropical forest canopy and their relevance to ants.

PubMed

Stark, Alyssa Y; Adams, Benjamin J; Fredley, Jennifer L; Yanoviak, Stephen P

2017-10-01

Small, cursorial ectotherms like ants often are immersed in the superheated air layers that develop millimeters above exposed, insolated surfaces (i.e., the thermal boundary layer). We quantified the thermal microenvironments around tree branches in the tropical rainforest canopy, and explored the effects of substrate color on the internal body temperature and species composition of arboreal ants. Branch temperatures during the day (09:00-16:00) were hottest (often > 50°C) and most variable on the upper surface, while the lowest and least variable temperatures occurred on the underside. Temperatures on black substrates declined with increasing distance above the surface in both the field and the laboratory. By contrast, a micro-scale temperature inversion occurred above white substrates. Wind events (ca. 2ms -1 ) eliminated these patterns. Internal temperatures of bodies of Cephalotes atratus workers experimentally heated in the laboratory were 6°C warmer on white vs. black substrates, and 6°C cooler than ambient in windy conditions. The composition of ant species foraging at baits differed between black-painted and unpainted tree branches, with a tendency for smaller ants to avoid the significantly hotter black surfaces. Collectively, these outcomes show that ants traversing canopy branches experience very heterogeneous thermal microenvironments that are partly influenced in predictable ways by branch surface coloration and breezy conditions. Copyright © 2017 Elsevier Ltd. All rights reserved.

Defect analysis of the LED structure deposited on the sapphire substrate

NASA Astrophysics Data System (ADS)

Nie, Qichu; Jiang, Zhimin; Gan, Zhiyin; Liu, Sheng; Yan, Han; Fang, Haisheng

2018-04-01

Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DCXRD) measurements have been performed to investigate dislocations of the whole structure of the LED layers deposited on both the conventional (unpatterned sapphire substrate, UPSS) and patterned sapphire substrates (PSS). TEM results show that there exists a dislocation-accumulated region near the substrate/GaN interface, where the dislocation density is much higher with the UPPS than that with the PSS. It indicates that the pattern on the substrate surface is able to block the formation and propagation of dislocations. Further analysis discloses that slope of the pattern is found to suppress the deposition of GaN, and thus to provide more spaces for the epitaxially lateral overgrowth (ELO) of high temperature GaN, which significantly reduces the number of the initial islands, and minimizes dislocation formation due to the island coalescence. V-defect incorporating the threading dislocation is detected in the InGaN/GaN multi-quantum wells (MQWs), and its propagation mechanism is determined as the decrease of the surface energy due to the incorporation of indium. In addition, temperature dependence of dislocation formation is further investigated. The results show that dislocation with the screw component decreases monotonously as temperature goes up. However, edge dislocation firstly drops, and then increases by temperature due to the enhanced thermal mismatch stress. It implies that an optimized range of the growth temperature can be obtained to improve quality of the LED layers.

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

NASA Technical Reports Server (NTRS)

Qui, Y.; Uhl, D.; Keo, S.

2003-01-01

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

An algorithm for temperature correcting substrate moisture measurements: aligning substrate moisture responses with environmental drivers in polytunnel-grown strawberry plants

NASA Astrophysics Data System (ADS)

Goodchild, Martin; Janes, Stuart; Jenkins, Malcolm; Nicholl, Chris; Kühn, Karl

2015-04-01

The aim of this work is to assess the use of temperature corrected substrate moisture data to improve the relationship between environmental drivers and the measurement of substrate moisture content in high porosity soil-free growing environments such as coir. Substrate moisture sensor data collected from strawberry plants grown in coir bags installed in a table-top system under a polytunnel illustrates the impact of temperature on capacitance-based moisture measurements. Substrate moisture measurements made in our coir arrangement possess the negative temperature coefficient of the permittivity of water where diurnal changes in moisture content oppose those of substrate temperature. The diurnal substrate temperature variation was seen to range from 7° C to 25° C resulting in a clearly observable temperature effect in substrate moisture content measurements during the 23 day test period. In the laboratory we measured the ML3 soil moisture sensor (ThetaProbe) response to temperature in Air, dry glass beads and water saturated glass beads and used a three-phase alpha (α) mixing model, also known as the Complex Refractive Index Model (CRIM), to derive the permittivity temperature coefficients for glass and water. We derived the α value and estimated the temperature coefficient for water - for sensors operating at 100MHz. Both results are good agreement with published data. By applying the CRIM equation with the temperature coefficients of glass and water the moisture temperature coefficient of saturated glass beads has been reduced by more than an order of magnitude to a moisture temperature coefficient of

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

NASA Astrophysics Data System (ADS)

Yoon, Kijeong; Song, Ohsung

2009-02-01

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Raship, N. A.; Sahdan, M. Z.; Adriyanto, F.; Nurfazliana, M. F.; Bakri, A. S.

2017-01-01

Copper oxide films were grown on silicon substrates by sol-gel dip coating method. In order to study the effects of annealing temperature on the properties of copper oxide films, the temperature was varied from 200 °C to 450 °C. In the process of dip coating, the substrate is withdrawn from the precursor solution with uniform velocity to obtain a uniform coating before undergoing an annealing process to make the copper oxide film polycrystalline. The physical properties of the copper oxide films were measured by an X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscopy (AFM) and a four point probe instrument. From the XRD results, we found that pure cuprite (Cu2O) phase can be obtained by annealing the films annealed at 200 °C. Films annealed at 300 °C had a combination phase which consists of tenorite (CuO) and cuprite (Cu2O) phase while pure tenorite (CuO) phase can be obtained at 450 °C annealing temperature. The surface microstructure showed that the grains size is increased whereas the surface roughness is increased and then decreases by increasing in annealing temperature. The films showed that the resistivity decreased with increasing annealing temperature. Consequently, it was observed that annealing temperature has strong effects on the structural, morphological and electrical properties of copper oxide films.

Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.

PubMed

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.

Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liangxin; Zhao, Jiangtao; Hong, Bin

2016-04-14

Vanadium dioxide (VO{sub 2}) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO{sub 3}) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal–insulator transition (MIT) behavior of the VO{sub 2} epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 10{sup 2} to 10{sup 4} with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thusmore » larger grain size in the (010)-VO{sub 2}/(111)-SrTiO{sub 3} epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO{sub 2} films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO{sub 2} epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO{sub 2} films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO{sub 2} can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.« less

Characterization of AlF3 thin films at 193 nm by thermal evaporation

NASA Astrophysics Data System (ADS)

Lee, Cheng-Chung; Liu, Ming-Chung; Kaneko, Masaaki; Nakahira, Kazuhide; Takano, Yuuichi

2005-12-01

Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF3 thin films have been studied. AlF3 thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 °C. The LIDT of the films prepared at a deposition rate of 2 Å/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress.

Characterization of AlF3 thin films at 193 nm by thermal evaporation.

PubMed

Lee, Cheng-Chung; Liu, Ming-Chung; Kaneko, Masaaki; Nakahira, Kazuhide; Takano, Yuuichi

2005-12-01

Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF3 thin films have been studied. AlF3 thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 degrees C. The LIDT of the films prepared at a deposition rate of 2 A/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress.

Tuning the properties of an MgO layer for spin-polarized electron transport

NASA Astrophysics Data System (ADS)

Zhao, Chong-Jun; Ding, Lei; Zhao, Zhi-Duo; Zhang, Peng; Cao, Xing-Zhong; Wang, Bao-Yi; Zhang, Jing-Yan; Yu, Guang-Hua

2014-08-01

The influence of substrate temperature and annealing on quality/microstructural evolution of MgO, as well as the resultant magnetoresistance (MR) ratio, has been investigated. It has been found that the crystallinity of MgO in the MgO/NiFe/MgO heterostructures gradually improves with increasing substrate temperature. This behavior facilitates the transport of spin-polarized electrons, resulting in a high MR value. After annealing, the formation of vacancy clusters in MgO layers observed through positron annihilation spectroscopy leads to an increase in MR at different levels because of the crystallinity improvement of MgO. However, these vacancy clusters as another important defect can limit further improvement in MR.

A multiphase mixture model for substrate concentration distribution characteristics and photo-hydrogen production performance of the entrapped-cell photobioreactor.

PubMed

Guo, Cheng-Long; Cao, Hong-Xia; Pei, Hong-Shan; Guo, Fei-Qiang; Liu, Da-Meng

2015-04-01

A multiphase mixture model was developed for revealing the interaction mechanism between biochemical reactions and transfer processes in the entrapped-cell photobioreactor packed with gel granules containing Rhodopseudomonas palustris CQK 01. The effects of difference operation parameters, including operation temperature, influent medium pH value and porosity of packed bed, on substrate concentration distribution characteristics and photo-hydrogen production performance were investigated. The results showed that the model predictions were in good agreement with the experimental data reported. Moreover, the operation temperature of 30 °C and the influent medium pH value of 7 were the most suitable conditions for photo-hydrogen production by biodegrading substrate. In addition, the lower porosity of packed bed was beneficial to enhance photo-hydrogen production performance owing to the improvement on the amount of substrate transferred into gel granules caused by the increased specific area for substrate transfer in the elemental volume. Copyright © 2015 Elsevier Ltd. All rights reserved.

Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

DOEpatents

Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

1995-07-25

A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

A thermophone on porous polymeric substrate

NASA Astrophysics Data System (ADS)

Chitnis, G.; Kim, A.; Song, S. H.; Jessop, A. M.; Bolton, J. S.; Ziaie, B.

2012-07-01

In this Letter, we present a simple, low-temperature method for fabricating a wide-band (>80 kHz) thermo-acoustic sound generator on a porous polymeric substrate. We were able to achieve up to 80 dB of sound pressure level with an input power of 0.511 W. No significant surface temperature increase was observed in the device even at an input power level of 2.5 W. Wide-band ultrasonic performance, simplicity of structure, and scalability of the fabrication process make this device suitable for many ranging and imaging applications.

Remodeling pathway control of mitochondrial respiratory capacity by temperature in mouse heart: electron flow through the Q-junction in permeabilized fibers.

PubMed

Lemieux, Hélène; Blier, Pierre U; Gnaiger, Erich

2017-06-06

Fuel substrate supply and oxidative phosphorylation are key determinants of muscle performance. Numerous studies of mammalian mitochondria are carried out (i) with substrate supply that limits electron flow, and (ii) far below physiological temperature. To analyze potentially implicated biases, we studied mitochondrial respiratory control in permeabilized mouse myocardial fibers using high-resolution respirometry. The capacity of oxidative phosphorylation at 37 °C was nearly two-fold higher when fueled by physiological substrate combinations reconstituting tricarboxylic acid cycle function, compared with electron flow measured separately through NADH to Complex I or succinate to Complex II. The relative contribution of the NADH pathway to physiological respiratory capacity increased with a decrease in temperature from 37 to 25 °C. The apparent excess capacity of cytochrome c oxidase above physiological pathway capacity increased sharply under hypothermia due to limitation by NADH-linked dehydrogenases. This mechanism of mitochondrial respiratory control in the hypothermic mammalian heart is comparable to the pattern in ectotherm species, pointing towards NADH-linked mt-matrix dehydrogenases and the phosphorylation system rather than electron transfer complexes as the primary drivers of thermal sensitivity at low temperature. Delineating the link between stress and remodeling of oxidative phosphorylation is important for understanding metabolic perturbations in disease evolution and cardiac protection.

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

2018-01-01

We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S _o for the thin films were determined and presented in this work.

Determination of Etch Rate Behavior of 4H-SiC Using Chlorine Trifluoride Gas

NASA Astrophysics Data System (ADS)

Miura, Yutaka; Habuka, Hitoshi; Katsumi, Yusuke; Oda, Satoko; Fukai, Yasushi; Fukae, Katsuya; Kato, Tomohisa; Okumura, Hajime; Arai, Kazuo

2007-12-01

The etch rate of single-crystalline 4H-SiC is studied using chlorine trifluoride gas at 673-973 K and atmospheric pressure in a cold wall horizontal reactor. The 4H-SiC etch rate can be higher than 10 μm/min at substrate temperatures higher than 723 K. The etch rate increases with the chlorine trifluoride gas flow rate. The etch rate is calculated by taking into account the transport phenomena in the reactor including the chemical reaction at the substrate surface. The flat etch rate at the higher substrate temperatures is caused mainly by the relationship between the transport rate and the surface chemical reaction rate of chlorine trifluoride gas.

Raman studied of undoped amorphous carbon thin film deposited by bias assisted-CVD

NASA Astrophysics Data System (ADS)

Ishak, A.; Fadzilah, A. N.; Dayana, K.; Saurdi, I.; Malek, M. F.; Nurbaya, Z.; Shafura, A. K.; Rusop, M.

2018-05-01

The undoped amorphous carbon thin film carbon was deposited at 200°C-350°C by bias assisted-CVD using palm oil as a precursor material. The effect of different substrate deposition temperatures on structural and electrical properties of undoped doped amorphous carbon film was discussed. The structural of undoped amorphous carbon films were correlated with Raman analysis through the evolution of D and G bands, Fourier spectra, and conductivity measurement. The spectral evolution observed showed the increase of upward shift of D and G peaks as substrate deposition temperatures increased. The spectral evolution observed at different substrate deposition temperatures show progressive formation of crystallites. It was predicted that small number of hydrogen is terminated with carbon at surface of thin film as shown by FTIR spectra since palm oil has high number of hydrogen (C67H127O8). These structural changes were further correlated with conductivity and the results obtained are discussed and compared. The conductivity is found in the range of 10-8 Scm-1. The increase of conductivity is correlated by the change of structural properties as correlated with characteristic parameters of Raman spectra including the position of G peak, full width at half maximum of G peak, and ID/IG and FTIR result.

Responses of caddisfly larvae (Brachycentrus spp. ) to temperature, food availability and current velocity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallepp, G.W.

1977-07-01

Larvae of the stream caddisflies, Brachycentrus americanus and Brachycentrus occidentalis, were studied in eight simulated stream channels to determine their behavioral responses to temperature, food availability (brine shrimp) and current velocity. For both species, filtering, withdrawn and case-building were the primary behavior patterns of larvae that had attached their cases to the substrate. Most larvae not attached to the substrate were crawling or holding. As temperatures increased above 8 C, B. occidentalis larvae filtered more frequantly; but above 20 C the percentage of larvae filtering steadily decreased and the percentage withdrawn increased dramatically with increasing temperature. Percentages of larvae case-buildingmore » and unattached generally decreased over the range of 4 to 27 C. Despite this decrease in case-building, B. occidentalis larvae generally grew faster as temperature increased from 4 to 16 C. Behavior of B. americanus as a function of temperature was similar to behavior of B. occidentalis. Both species responded to decreased ration by increasing the percentage of time filtering. Although many larvae were unattached and probably grazing in Lawrence Creek, few larvae were unattached in the laboratory, even at the lowest ration (1.2 percent of the body weight per day). Growth and case-building activity of B. americanus larvae were directly related to ration. Over the range of current velocities of 7 to 26 cm/sec, behavior of B. occidentalis changed little. At 5 cm/sec fewer larvae filtered and more were unattached; this suggested a threshold response to current velocity. Increasing temperatures from 10 to 20 C caused the percentage withdrawn at low velocities to increase; however, this trend was hardly noticeable at velocities above 10 cm/sec. In these tests, Brachycentrus were more responsive to temperature and food availability than to current velocity.« less

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Characterization of microbial community structure during continuous anaerobic digestion of straw and cow manure

PubMed Central

Sun, Li; Pope, Phillip B; Eijsink, Vincent G H; Schnürer, Anna

2015-01-01

Responses of bacterial and archaeal communities to the addition of straw during anaerobic digestion of manure at different temperatures (37°C, 44°C and 52°C) were investigated using five laboratory-scale semi-continuous stirred tank reactors. The results revealed that including straw as co-substrate decreased the species richness for bacteria, whereas increasing the operating temperature decreased the species richness for both archaea and bacteria, and also the evenness of the bacteria. Taxonomic classifications of the archaeal community showed that Methanobrevibacter dominated in the manure samples, while Methanosarcina dominated in all digesters regardless of substrate. Increase of the operating temperature to 52°C led to increased relative abundance of Methanoculleus and Methanobacterium. Among the bacteria, the phyla Firmicutes and Bacteroidetes dominated within all samples. Compared with manure itself, digestion of manure resulted in a higher abundance of an uncultured class WWE1 and lower abundance of Bacilli. Adding straw to the digesters increased the level of Bacteroidia, while increasing the operating temperature decreased the level of this class and instead increased the relative abundance of an uncultured genus affiliated to order MBA08 (Clostridia). A considerable fraction of bacterial sequences could not be allocated to genus level, indicating that novel phylotypes are resident in these communities. PMID:26152665

Rubber friction: role of the flash temperature.

PubMed

Persson, B N J

2006-08-16

When a rubber block is sliding on a hard rough substrate, the substrate asperities will exert time-dependent deformations of the rubber surface resulting in viscoelastic energy dissipation in the rubber, which gives a contribution to the sliding friction. Most surfaces of solids have roughness on many different length scales, and when calculating the friction force it is necessary to include the viscoelastic deformations on all length scales. The energy dissipation will result in local heating of the rubber. Since the viscoelastic properties of rubber-like materials are extremely strongly temperature dependent, it is necessary to include the local temperature increase in the analysis. At very low sliding velocity the temperature increase is negligible because of heat diffusion, but already for velocities of order 10(-2) m s(-1) the local heating may be very important. Here I study the influence of the local heating on the rubber friction, and I show that in a typical case the temperature increase results in a decrease in rubber friction with increasing sliding velocity for v>0.01 m s(-1). This may result in stick-slip instabilities, and is of crucial importance in many practical applications, e.g. for tyre-road friction and in particular for ABS braking systems.

Experimental and FDTD study of silicon surface morphology induced by femtosecond laser irradiation at a high substrate temperature.

PubMed

Deng, Guoliang; Feng, Guoying; Zhou, Shouhuan

2017-04-03

Substrate temperature is an important parameter for controlling the properties of femtosecond laser induced surface structures besides traditional ways. The morphology on silicon surface at different temperatures are studied experimentally. Compared to those formed at 300 K, smoother ripples, micro-grooves and nano/micro-holes are formed at 700 K. A two temperature model and FDTD method are used to discuss the temperature dependence of surface structures. The results show that the increased light absorption at elevated temperature leads to the reduction of surface roughness. The type-g feature in the FDTD-η map at 700 K, which corresponds to the energy deposition modulation parallel to the laser polarization with a periodicity bigger than the wavelength, is the origin of the formation of grooves. This work can benefit both surface structures based applications and the study of femtosecond laser-matter interactions.

Increasing Boiling Heat Transfer using Low Conductivity Materials

PubMed Central

Mahamudur Rahman, Md; Pollack, Jordan; McCarthy, Matthew

2015-01-01

We report the counterintuitive mechanism of increasing boiling heat transfer by incorporating low-conductivity materials at the interface between the surface and fluid. By embedding an array of non-conductive lines into a high-conductivity substrate, in-plane variations in the local surface temperature are created. During boiling the surface temperature varies spatially across the substrate, alternating between high and low values, and promotes the organization of distinct liquid and vapor flows. By systematically tuning the peak-to-peak wavelength of this spatial temperature variation, a resonance-like effect is seen at a value equal to the capillary length of the fluid. Replacing ~18% of the surface with a non-conductive epoxy results in a greater than 5x increase in heat transfer rate at a given superheat temperature. This drastic and counterintuitive increase is shown to be due to optimized bubble dynamics, where ordered pathways allow for efficient removal of vapor and the return of replenishing liquid. The use of engineered thermal gradients represents a potentially disruptive approach to create high-efficiency and high-heat-flux boiling surfaces which are naturally insensitive to fouling and degradation as compared to other approaches. PMID:26281890

Thermal and substrate color-induced melanization in laboratory reared red-eared sliders (Trachemys scripta elegans).

PubMed

Rowe, John W; Clark, David L; Mortensen, Rebecca A; Commissaris, Carolyn V; Wittle, Lawrence W; Tucker, John K

2016-10-01

Color and pigmentation patterns of the integument can facilitate crypsis, thermoregulation, and social signaling. According to the "thermal melanism hypothesis", cold environmental temperature should increase the quantity of melanin that is deposited in the integument thereby facilitating radiative warming. We studied the influences of water temperature (26°C or 31°C) and substrate color (black or white) on the degree of melanization in the red-eared slider, Trachemys scripta elegans, under laboratory conditions. Turtles reared on a black substrate, or in 26°C water, for 120 days were darker than those reared on a white substrate or in 31°C water. A potential tradeoff between the fitness benefits of crypsis and the benefits of radiative warming through melanism was detected because turtles reared in 26°C water and on a white substrate were darker than those reared on a white substrate and in 31°C water. Low temperatures limited metabolic processes because turtles reared in 26°C water grew more slowly than those reared in 31°C water. However, histological analyses revealed that melanization was a dynamic process in all treatments confirming that the degree of melanization in the cool water treatment was not influenced by the initial and relatively dark hatchling coloration in individuals that grew relatively slowly. Copyright © 2016 Elsevier Ltd. All rights reserved.

Uncertainties in the temperature sensitivity of decomposition in tropical and subtropical ecosystems: Implications for models

NASA Astrophysics Data System (ADS)

Holland, Elisabeth A.; Neff, Jason C.; Townsend, Alan R.; McKeown, Becky

2000-12-01

Tropical ecosystems play a central role in the global carbon cycle. Large changes in tropical temperature over geologic time and the significant responses of tropical ecosystems to shorter-term variations such as El Niño/La Niña argue for a robust understanding of the temperature sensitivity of tropical decomposition. To examine the responsiveness of heterotrophic respiration to temperature, we measured rates of heterotrophic respiration from a wide range of tropical soils in a series of laboratory incubations. Under conditions of optimal soil water and nonlimiting substrate availability, heterotrophic respiration rose exponentially with rising temperature. The meanQ10measured across all temperature ranges in these short-term incubations was 2.37, but there was significant variation inQ10s across sites. The source of this variation could not be explained by soil carbon or nitrogen content, soil texture, site climate, or lignin to nitrogen ratio. At the beginning of the incubation, heterotrophic respiration increased exponentially with temperature for all sites, despite the fact that the fluxes differed by an order of magnitude. When substrate availability became limiting later in the incubation, the temperature response changed, and heterotrophic response declined above 35°C. The documented changes in temperature sensitivity with substrate availability argue for using temperature relationships developed under optimal conditions of substrate availability for models which include temperature regulation of heterotrophic respiration. To evaluate the significance of this natural variation in temperature control over decomposition, we used the Century ecosystem model gridded for the areas between the tropics of Cancer and Capricorn. These simulations used the mean and upper and lower confidence limits of the normalized exponential temperature response of our experimental studies. We found that systems with the lowest temperature sensitivity accumulated a total of 70 Pg more carbon in soil organic carbon and respired 5.5 Pg yr-1 less carbon compared to the systems with the highest sensitivity.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

PubMed

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Heat-transfer dynamics during cryogen spray cooling of substrate at different initial temperatures.

PubMed

Jia, Wangcun; Aguilar, Guillermo; Wang, Guo-Xiang; Nelson, J Stuart

2004-12-07

Cryogen spray cooling (CSC) is used to minimize the risk of epidermal damage during laser dermatologic therapy. However, the dominant mechanisms of heat transfer during the transient cooling process are incompletely understood. The objective of this study is to elucidate the physics of CSC by measuring the effect of initial substrate temperature (T0) on cooling dynamics. Cryogen was delivered by a straight-tube nozzle onto a skin phantom. A fast-response thermocouple was used to record the phantom temperature changes before, during and after the cryogen spray. Surface heat fluxes (q") and heat-transfer coefficients (h) were computed using an inverse heat conduction algorithm. The maximum surface heat flux (q"max) was observed to increase with T0. The surface temperature corresponding to q"max also increased with T0 but the latter has no significant effect on h. It is concluded that heat transfer between the cryogen spray and skin phantom remains in the nucleate boiling region even if T0 is 80 degrees C.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Pulsed laser deposition of niobium nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu; Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606

2015-12-04

Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubicmore » δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.« less

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

NASA Technical Reports Server (NTRS)

Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

2005-01-01

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo.

PubMed

Heim, Amy; Lundholm, Jeremy

2013-01-01

Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm) exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

Effect of negative bias on TiAlSiN coating deposited on nitrided Zircaloy-4

NASA Astrophysics Data System (ADS)

Jun, Zhou; Zhendong, Feng; Xiangfang, Fan; Yanhong, Liu; Huanlin, Li

2018-01-01

TiAlSiN coatings were deposited on the nitrided Zircaloy-4 by multi-arc ion plating at -100 V, -200 V and -300 V. In this study, the high temperature oxidation behavior of coatings was tested by a box-type resistance furnace in air for 3 h at 800 °C; the macro-morphology of coatings was observed and analyzed by a zoom-stereo microscope; the micro-morphology of coatings was analyzed by a scanning electron microscopy (SEM), and the chemical elements of samples were analyzed by an energy dispersive spectroscopy(EDS); the adhesion strength of the coating to the substrate was measured by an automatic scratch tester; and the phases of coatings were analyzed by an X-ray diffractometer(XRD). Results show that the coating deposited at -100 V shows better high temperature oxidation resistance behavior, at the same time, Al elements contained in the coating is of the highest amount, meanwhile, the adhesion strength of the coating to the substrate is the highest, which is 33N. As the bias increases, high temperature oxidation resistance behavior of the coating weakens first and then increases, the amount of large particles on the surface of the coating increases first and then decreases whereas the density of the coating decreases first and then increases, and adhesion strength of the coating to the substrate increases first and then weakens. The coating's quality is relatively poor when the bias is -200 V.

Tuning the metal-insulator transition of VO2 by introducing W dopants via a combinatorial approach

NASA Astrophysics Data System (ADS)

Liang, Yangang; Lee, Seunghun; Zhang, Xiaohang; Takeuchi, Ichiro

We have systematically studied the structural phase transition and the electronic properties of composition spread V1-xWxO2 (0 <= x <= 0.037) thin films fabricated on silicon (001) and c-cut sapphire substrates through combinatorial pulsed laser deposition of a V2O5 target and a WO3 target. Our in-situ temperature-dependent x-ray diffraction measurements reveal a gradual change in the film structure from a monoclinic phase to a tetragonal phase via an intermediate mixture of the two as the concentration of tungsten increases from 0% to 3.7% at 300 K. At 358 K, the film is found to be in a tetragonal phase for the entire composition range we studied. The results also suggest that the volume of the unit cell increases as the concentration of tungsten increases. Electrical transport results further show that both the phase transition temperature and the width of the hysteresis loop decrease with the increasing of the concentration of tungsten. Especially, epitaxial V1-xWxO2 films fabricated on c-cut sapphire substrates show narrower hysteresis loop compared to textured V1-xWxO2 films fabricated on Si (100) substrates. In addition, the Hall effect measurements on the epitaxial V1-xWxO2 thin films at various temperature points provide important information for the change in the electronic structure upon increasing the concentration of tungsten. This work was supported by CNAM.

ARPES Studies on the substrate effect on monolayer FeSe

NASA Astrophysics Data System (ADS)

Rebec, Slavko; Jia, Tao; Lee, James; Li, Wei; Zhang, Chaofan; Moore, Robert; Shen, Z. X.

For 2D films, interface interactions can play a critical role in determining the prevailing physics of the system. In the case of FeSe on SrTiO3, reducing the FeSe thickness to 1 monolayer (ML) from bulk leads to a significantly increased superconducting transition temperature (Tc). To fully utilize and maximize this approach to increasing Tc in FeSe and potentially apply it to other superconducting materials, the role which the substrate plays in this system must be understood. Here we present recent in-situ angle-resolved photo emission studies of the substrate effect on MBE grown 1 ML FeSe films.

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

PubMed Central

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow. PMID:24369453

Effect of substrate temperature on magnetic properties of MnFe2O4 thin films

NASA Astrophysics Data System (ADS)

Rajagiri, Prabhu; Sahu, B. N.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

2018-05-01

MnFe2O4 thin films were pulsed laser deposited on to quartz substrate from room temperature (RT) to 650 °C in a pure argon environment. Temperature dependence of spontaneous magnetization (4πMS) was measured on these films from 10 K to 350 K using a vibrating sample magnetometer. Ferromagnetic resonance (FMR) study was also carried out at 300 K. The exchange stiffness constant (D) values were obtained by fitting the 4πMS data to the Bloch's equation. The D values of the films thus found decreases while the 4πMS value increases, though non-monotonically, with the increase in TS and tend to reach bulk values at TS = 650 °C. The variation in D and 4πMS values of the films are explained based on the degree of inversion and oxidation state of cations in thin films.

Deposition rate and substrate temperature effects on the structure and properties of bulk-sputtered OFHC Cu and Cu-0.15Zr. [Oxygen-Free High-Conductivity

NASA Technical Reports Server (NTRS)

Hecht, R. J.; Mullaly, J. R.

1975-01-01

Bulk-sputtered OFHC Cu and Cu-0.15 Zr used as inner walls of advanced regeneratively cooled thrust chambers are evaluated as to microstructure, surface topography, and fractography. It is found that under conditions of low substrate temperature, crystallite size and openness of the structure increase with increasing deposition rate for both materials. At elevated temperatures, an equiaxed ductile structure of OFHC Cu is produced only at low deposition rates; at higher deposition rate, open structures are observed with recrystallized equiaxed grains within large poorly bonded crystallites. The Cu-0.15 Zr alloy sputtered from the hollow cathode using a diode discharge shows open-type structures for all conditions evaluated. The use of a triode discharge in generating a dense non-voided structure of Cu-0.15 Zr is discussed.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

PubMed

Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

2012-07-11

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

Influence of Y doping concentration on the properties of nanostructured MxZn1-xO (M=Y) thin film deposited by nebulizer spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Mariappan, R.; Ponnuswamy, V.; Chandra Bose, A.; Suresh, R.; Ragavendar, M.

2014-09-01

Yttrium doped Zinc Oxide (YxZn1-xO) thin films deposited at a substrate temperature 400 °C. The effect of substrate temperature on the structural, surface morphology, compositional, optical and electrical properties of YxZn1-xO thin films was studied. X-ray diffraction studies show that all films are polycrystalline in nature with hexagonal crystal structure having highly textured (002) plane parallel to the surface of the substrate. The structural parameters, such as lattice constants (a and c), crystallite size (D), dislocation density (δ), microstrain (σ) and texture coefficient were calculated for different yttrium doping concentrations (x). High resolution scanning electron microscopy measurements reveal that the surface morphology of the films change from platelet like grains to hexagonal structure with grain size increase due to the yttrium doping. Energy dispersive spectroscopy confirms the presence of Y, Zn and O elements in the films prepared. Optical studies showed that all samples have a strong optical transmittance higher than 70% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the Y doping concentration increased. This result shows that the band gap is slightly decreased from 3.10 to 2.05 eV with increase of the yttrium doping concentrations (up to 7.5%) and then slightly increased. Room temperature PL measurements were done and the band-to-band emission energies of films were determined and reported. The complex impedance of the 10%Y doped ZnO film shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 70 to 175 °C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Shweta, E-mail: shwetaverma@rrcat.gov.in; Rao, B. T.; Detty, A. P.

We studied localized surface plasmon resonances (LSPR) at different compositions, substrate temperatures, and mass thicknesses of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition. The LSPRs were pronounced at all compositions of the films grown at high substrate temperature of about 300 °C as compared to those grown at room temperature. The alloy formation and composition of the films were determined using X-ray photoelectron and energy dispersive spectroscopy. Films' mass thickness and compositional uniformity along the thickness were determined using X-ray reflectometry and secondary ion mass spectroscopy. Atomic force microscopic analysis revealed the formation of densely packed nanoparticles ofmore » increasing size with the number of laser ablation pulses. The LSPR wavelength red shifted with increasing either Au percentage or film mass thickness and corresponding LSPR tuning was obtained in the range of 450 to 690 nm. The alloy dielectric functions obtained from three different models were compared and the optical responses of the nanoparticle films were calculated from modified Yamaguchi effective medium theory. The tuning of LSPR was found to be due to combined effect of change in intrinsic and extrinsic parameters mainly the composition, morphology, particle-particle, and particle-substrate interactions.« less

Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kalkan, N.

2016-10-01

Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

Influence of temperature on the CuIn1-xGaxSe2films deposited by picosecond laser ablation

NASA Astrophysics Data System (ADS)

Sima, Cornelia; Toma, Ovidiu

2017-12-01

The goal of this study is to investigate the influence of the deposition temperature on the CuIn1-xGaxSe2 (CIGS-copper indium gallium diselenide) film characteristics deposited by picosecond laser ablation method using a Nd:YVO4 laser (8 ps, 0.2 W, 50 kHz, 532 nm; 5.7 mJ/cm2; 36 × 107 pulses). The films were deposited starting from a CuIn0.7Ga0.3Se2 target, in vacuum at 3 × 10-5 Torr for 2 h, at room temperature (RT) and 100/200/300/400 °C substrate temperature; as substrate, optical glass was used. Structure, film morphology, composition and optical properties were investigated by X ray diffraction, scanning electron microscopy (energy dispersive X ray spectroscopy), spectroscopic ellipsometry and optical spectrophotometry. CIGS crystalline films have the dominant peak corresponding to (112) direction more pronounced starting with 200 °C deposition temperature. The thickness gradually decreased with temperature increasing, being 1.44 μm at RT and 0.72 μm at 400 °C; atomic composition in the case of In, Ga, Se increased after annealing, while in the case of Cu it decreased comparing with RT; refractive indices exhibited a short decreasing tendency by increasing the deposition temperature, while the optical band gap values for CuIn0.7Ga0.3Se2 laser ablated thin films increased.

Oxides for sustainable photovoltaics with earth-abundant materials

NASA Astrophysics Data System (ADS)

Wagner, Alexander; Stahl, Mathieu; Ehrhardt, Nikolai; Fahl, Andreas; Ledig, Johannes; Waag, Andreas; Bakin, Andrey

2014-03-01

Energy conversion technologies are aiming to extremely high power capacities per year. Nontoxicity and abundance of the materials are the key requirements to a sustainable photovoltaic technology. Oxides are among the key materials to reach these goals. We investigate the influence of thin buffer layers on the performance of an ZnO:Al/buffer/Cu2O solar cells. Introduction of a thin ZnO or Al2O3 buffer layer, grown by thermal ALD, between ZnO:Al and Cu2O resulted in 45% increase of the solar cell efficiency. VPE growth of Cu2O employing elemental copper and pure oxygen as precursor materials is presented. The growth is performed on MgO substrates with the (001) orientation. On- and off- oriented substrates have been employed and the growth results are compared. XRD investigations show the growth of the (110) oriented Cu2O for all temperatures, whereas at a high substrate temperature additional (001) Cu2O growth occurs. An increase of the oxygen partial pressure leads to a more pronounced 2D growth mode, whereby pores between the islands still remain. The implementation of off-axis substrates with 3.5° and 5° does not lead to an improvement of the layer quality. The (110) orientation remains predominant, the grain size decreases and the FWHM of the (220) peak increases. From the AFM images it is concluded, that the (110) surface grows with a tilt angle to the substrate surface.

High Corrosion Resistance Offered by Multi-Walled Carbon Nanotubes Directly Grown Over Mild Steel Substrate

NASA Astrophysics Data System (ADS)

Arora, Sweety; Rekha, M. Y.; Gupta, Abhay; Srivastava, Chandan

2018-02-01

The inert and hydrophobic nature of carbon nanotubes (CNTs) makes them a potential material for corrosion protection coatings. In this work, a uniform coating of multi-walled CNTs (MWCNTs) was formed over a mild steel substrate by direct decomposition of a ferrocene-benzene mixture over the substrate which was kept inside a chemical vapor deposition setup at a temperature of 800°C. The MWCNTs formed over the substrate were characterized using x-ray diffraction, Raman spectroscopy and transmission electron microscopy techniques. Corrosion behavior of the bare and MWCNT-coated mild steel substrate was examined through potentiodynamic polarization and electrochemical impedance spectroscopy methods. A significant improvement in the corrosion resistance in terms of the reduction in corrosion current and corrosion rate and increase in polarization resistance was noted in the case of the MWCNT-coated mild steel plate. Corrosion resistance increased due to MWCNT coating.

Improving the properties of zinc oxide thin-film surface acoustic wave device on glass substrate by introducing double alumina layers

NASA Astrophysics Data System (ADS)

Shih, Wen-Ching; Huang, Yi-Fan; Wu, Mu-Shiang

2017-10-01

ZnO films with c-axis (0002) orientation have been successfully grown by RF magnetron sputtering on Al2O3/glass substrates. The alumina films were firstly deposited on glass substrates, and then secondly deposited on interdigital transducer/ZnO film/alumina film/glass substrates by electron beam evaporation. The crystalline structure and surface roughness of the films were investigated by X-ray diffraction and atomic force microscopy, respectively. The phase velocity and coupling coefficient of the surface acoustic wave (SAW) device were both increased when we deposited the double alumina layers. On the other hand, the temperature coefficient of frequency becomes better if we increase the thickness of the lower alumina film. The experimental result is beneficial for improving the performance of the ZnO thin-film SAW devices on inexpensive glass substrates.

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

NASA Astrophysics Data System (ADS)

Rosli, Z. M.; Kwan, W. L.; Juoi, J. M.

2016-07-01

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (RN), and substrate temperature (TS). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % RN. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB2 phase within the coatings. The TS, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

Impact of temperature and substrate concentration on degradation rates of acetate, propionate and hydrogen and their links to microbial community structure.

PubMed

Zhao, Jing; Westerholm, Maria; Qiao, Wei; Yin, Dongmin; Bi, Shaojie; Jiang, Mengmeng; Dong, Renjie

2018-05-01

The present study investigates the conversion of acetate, propionate and hydrogen consumption linked to the microbial community structure and related to temperature and substrate concentration. Biogas reactors were continuously fed with coffee powder (20 g-COD/L) or acetate (20, 40, and 60 g-COD/L) and operated for 193 days at 37 °C or 55 °C conditions. Starting HRT was 23 days which was then reduced to 7 days. The kinetics of acetate and propionate degradation and hydrogen consumption rates were measured in batch assays. At HRT 7 days, the degradation rate of propionate was higher in thermophilic batches, while acetate degradation rate was higher at mesophilic conditions. The gaseous hydrogen consumption in acetate reactors increased proportionally with temperature and substrate concentration, while the dissolved hydrogen was not affected. The relative high abundance of hydrogentrophic methanogens indicated that the methanogenesis was directed towards the syntrophic acetate oxidation pathway at high acetate concentration and high temperature. Copyright © 2018 Elsevier Ltd. All rights reserved.

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Fedler, F.; Hauenstein, R. J.

1999-10-01

Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1-xN epitaxial materials. HRXRD results for InxGa1-xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x¯ upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x¯ with increasing growth temperature within the narrow range 590-670 °C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss.

Guiding Empirical and Theoretical Explorations of Organic Matter Decay By Synthesizing Temperature Responses of Enzyme Kinetics, Microbes, and Isotope Fluxes

NASA Astrophysics Data System (ADS)

Billings, S. A.; Ballantyne, F.; Lehmeier, C.; Min, K.

2014-12-01

Soil organic matter (SOM) transformation rates generally increase with temperature, but whether this is realized depends on soil-specific features. To develop predictive models applicable to all soils, we must understand two key, ubiquitous features of SOM transformation: the temperature sensitivity of myriad enzyme-substrate combinations and temperature responses of microbial physiology and metabolism, in isolation from soil-specific conditions. Predicting temperature responses of production of CO2 vs. biomass is also difficult due to soil-specific features: we cannot know the identity of active microbes nor the substrates they employ. We highlight how recent empirical advances describing SOM decay can help develop theoretical tools relevant across diverse spatial and temporal scales. At a molecular level, temperature effects on purified enzyme kinetics reveal distinct temperature sensitivities of decay of diverse SOM substrates. Such data help quantify the influence of microbial adaptations and edaphic conditions on decay, have permitted computation of the relative availability of carbon (C) and nitrogen (N) liberated upon decay, and can be used with recent theoretical advances to predict changes in mass specific respiration rates as microbes maintain biomass C:N with changing temperature. Enhancing system complexity, we can subject microbes to temperature changes while controlling growth rate and without altering substrate availability or identity of the active population, permitting calculation of variables typically inferred in soils: microbial C use efficiency (CUE) and isotopic discrimination during C transformations. Quantified declines in CUE with rising temperature are critical for constraining model CUE estimates, and known changes in δ13C of respired CO2 with temperature is useful for interpreting δ13C-CO2 at diverse scales. We suggest empirical studies important for advancing knowledge of how microbes respond to temperature, and ideas for theoretical work to enhance the relevance of such work to the world's soils.

Fuzzy logic control of rotating drum bioreactor for improved production of amylase and protease enzymes by Aspergillus oryzae in solid-state fermentation.

PubMed

Sukumprasertsri, Monton; Unrean, Pornkamol; Pimsamarn, Jindarat; Kitsubun, Panit; Tongta, Anan

2013-03-01

In this study, we compared the performance of two control systems, fuzzy logic control (FLC) and conventional control (CC). The control systems were applied for controlling temperature and substrate moisture content in a solidstate fermentation for the biosynthesis of amylase and protease enzymes by Aspergillus oryzae. The fermentation process was achieved in a 200 L rotating drum bioreactor. Three factors affecting temperature and moisture content in the solid-state fermentation were considered. They were inlet air velocity, speed of the rotating drum bioreactor, and spray water addition. The fuzzy logic control system was designed using four input variables: air velocity, substrate temperature, fermentation time, and rotation speed. The temperature was controlled by two variables, inlet air velocity and rotational speed of bioreactor, while the moisture content was controlled by spray water. Experimental results confirmed that the FLC system could effectively control the temperature and moisture content of substrate better than the CC system, resulting in an increased enzyme production by A. oryzae. Thus, the fuzzy logic control is a promising control system that can be applied for enhanced production of enzymes in solidstate fermentation.

Ten Ghz YBa2Cu3O(7-Delta) Superconducting Ring Resonators on NdGaO3 Substrates

NASA Technical Reports Server (NTRS)

To, H. Y.; Valco, G. J.; Bhasin, K. B.

1993-01-01

YBa2Cu3O(7-delta) thin films were formed on NdGaO3 substrates by laser ablation. Critical temperatures greater than 89 K and critical current densities exceeding 2 x 10(exp 8) Acm(sub -2) at 77 K were obtained. The microwave performance of films patterned into microstrip ring resonators with gold ground planes was measured. An unloaded quality factor six times larger than that of a gold resonator of identical geometry was achieved. The unloaded quality factor decreased below 70 K for both the superconducting and gold resonators due to increasing dielectric losses in the substrate. The temperature dependence of the loss tangent of NdGaO3 was extracted from the measurements.

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

NASA Astrophysics Data System (ADS)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-02-01

Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

The Influence of Process Equipment on the Properties of Suspension Plasma Sprayed Yttria-Stabilized Zirconia Coatings

NASA Astrophysics Data System (ADS)

Marr, Michael; Waldbillig, David; Kesler, Olivera

2013-03-01

Suspension plasma-sprayed YSZ coatings were deposited at lab-scale and production-type facilities to investigate the effect of process equipment on coating properties. The target application for these coatings is solid oxide fuel cell (SOFC) electrolytes; hence, dense microstructures with low permeability values were preferred. Both facilities had the same torch but different suspension feeding systems, torch robots, and substrate holders. The lab-scale facility had higher torch-substrate relative speeds compared with the production-type facility. On porous stainless steel substrates, permeabilities and microstructures were comparable for coatings from both facilities, and no segmentation cracks were observed. Coating permeability was further reduced by increasing substrate temperatures during deposition or reducing suspension feed rates. On SOFC cathode substrates, coatings made in the production-type facility had higher permeabilities and more segmentation cracks compared with coatings made in the lab-scale facility. Increased cracking in coatings from the production-type facility was likely caused mainly by its lower torch-substrate relative speed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert

Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

Effect of various factors on the activity of trehalase from the larvae of Sesamia inferens Walker (Insect).

PubMed

Agarwal, A K

1976-12-15

Trehalase from the salivary glands and the midgut of Sesamia inferens showed optimum activity at pH 5.8, and at temperatures of 50 and 60 degrees C respectively. The increase in the incubation period, enzyme concentration, and substrate concentration respectively increased the end-product, the hydrolysis, and the rate of hydrolysis of the substrate. Dialysis did not affect, tryptophan accelerated, and other amino acids and end-product inhibited the enzyme activity.

Temperature-dependent subunit exchange and chaperone-like activities of Hsp16.3, a small heat shock protein from Mycobacterium tuberculosis.

PubMed

Fu, Xinmiao; Chang, Zengyi

2004-04-02

Small heat shock proteins (sHsps) usually exist as oligomers that undergo dynamic oligomeric dissociation/re-association, with the dissociated oligomers as active forms to bind substrate proteins under heat shock conditions. In this study, however, we found that Hsp16.3, one sHsp from Mycobacterium tuberculosis, is able to sensitively modulate its chaperone-like activity in a range of physiological temperatures (from 25 to 37.5 degrees C) while its native oligomeric size is still maintained. Further analysis demonstrated that Hsp16.3 exposes higher hydrophobic surfaces upon temperatures increasing and that a large soluble complex between Hsp16.3 and substrate is formed only in the condition of heating temperature up to 35 and 37.5 degrees C. Structural analysis by fluorescence anisotropy showed that Hsp16.3 nonameric structure becomes more dynamic and variable at elevated temperatures. Moreover, subunit exchange between Hsp16.3 oligomers was found to occur faster upon temperatures increasing as revealed by fluorescence energy resonance transfer. These observations indicate that Hsp16.3 is able to modulate its chaperone activity by adjusting the dynamics of oligomeric dissociation/re-association process while maintaining its static oligomeric size unchangeable. A kinetic model is therefore proposed to explain the mechanism of sHsps-binding substrate proteins through oligomeric dissociation. The present study also implied that Hsp16.3 is at least capable of binding non-native proteins in vivo while expressing in the host organism that survives at 37 degrees C.

An in vivo Investigation into Temperature-Controlled Stratification of Sub-Seafloor Populations

NASA Astrophysics Data System (ADS)

McClelland, H. L. O.; Morono, Y.; Fike, D. A.; Bradley, A. S.

2017-12-01

The deep subsurface is characterized by a paucity of carbon substrates and biologically exploitable chemical potential energy. These metabolic challenges can be exacerbated by high temperatures, due to increased costs of cellular maintenance. Though sparse, microbial life persists in such environments, however, the degree to which temperature gradients result in the stratification extremophilic sub-seafloor populations is poorly understood. During Expedition 370, we established a matrix of incubation experiments with sediment samples taken from 8 depths corresponding to in situ temperatures of approximately 37, 50, 60, 70, 80, 90, 100 and 110°C, which were incubated in oxygen-free, acetate- and sulfate- supplemented, artificial seawater at temperatures of 37, 50, 60, 70 and 80°C. Substrates include large isotopic labels. Following separation from the sediment, cells were analyzed using SIMS, allowing estimates of biomass synthesis rates. We are interested in discussing potential future experiments and collaborations using this resource.

Formation mechanism and mechanics of dip-pen nanolithography using molecular dynamics.

PubMed

Wu, Cheng-Da; Fang, Te-Hua; Lin, Jen-Fin

2010-03-02

Molecular dynamics simulations are used to investigate the mechanisms of molecular transference, pattern formation, and mechanical behavior in the dip-pen nanolithography (DPN) process. The effects of deposition temperature were studied using molecular trajectories, the meniscus characteristic, surface absorbed energy, and pattern formation analysis. At the first transferred stage (at the initial indentation depth), the conformation of SAM molecules lies almost on the substrate surface. The molecules start to stand on the substrate due to the pull and drag forces at the second transferred stage (after the tip is pulled up). According to the absorbed energy behavior, the second transferred stage has larger transferred amounts and the transfer rate is strongly related to temperature. When molecules were deposited at low temperature (e.g., room temperature), the pattern shape was more highly concentrated. The pattern shape at high temperatures expanded and the area increased because of good molecular diffusion.

An optimality framework to predict decomposer carbon-use efficiency trends along stoichiometric gradients

NASA Astrophysics Data System (ADS)

Manzoni, S.; Capek, P.; Mooshammer, M.; Lindahl, B.; Richter, A.; Santruckova, H.

2016-12-01

Litter and soil organic matter decomposers feed on substrates with much wider C:N and C:P ratios then their own cellular composition, raising the question as to how they can adapt their metabolism to such a chronic stoichiometric imbalance. Here we propose an optimality framework to address this question, based on the hypothesis that carbon-use efficiency (CUE) can be optimally adjusted to maximize the decomposer growth rate. When nutrients are abundant, increasing CUE improves decomposer growth rate, at the expense of higher nutrient demand. However, when nutrients are scarce, increased nutrient demand driven by high CUE can trigger nutrient limitation and inhibit growth. An intermediate, `optimal' CUE ensures balanced growth at the verge of nutrient limitation. We derive a simple analytical equation that links this optimal CUE to organic substrate and decomposer biomass C:N and C:P ratios, and to the rate of inorganic nutrient supply (e.g., fertilization). This equation allows formulating two specific hypotheses: i) decomposer CUE should increase with widening organic substrate C:N and C:P ratios with a scaling exponent between 0 (with abundant inorganic nutrients) and -1 (scarce inorganic nutrients), and ii) CUE should increase with increasing inorganic nutrient supply, for a given organic substrate stoichiometry. These hypotheses are tested using a new database encompassing nearly 2000 estimates of CUE from about 160 studies, spanning aquatic and terrestrial decomposers of litter and more stabilized organic matter. The theoretical predictions are largely confirmed by our data analysis, except for the lack of fertilization effects on terrestrial decomposer CUE. While stoichiometric drivers constrain the general trends in CUE, the relatively large variability in CUE estimates suggests that other factors could be at play as well. For example, temperature is often cited as a potential driver of CUE, but we only found limited evidence of temperature effects, although in some subsets of data, temperature and substrate stoichiometry appeared to interact. Based on our results, the optimality principle can provide a solid (but still incomplete) framework to develop CUE models for large-scale applications.

Natural printed silk substrate circuit fabricated via surface modification using one step thermal transfer and reduction graphene oxide

NASA Astrophysics Data System (ADS)

Cao, Jiliang; Huang, Zhan; Wang, Chaoxia

2018-05-01

Graphene conductive silk substrate is a preferred material because of its biocompatibility, flexibility and comfort. A flexible natural printed silk substrate circuit was fabricated by one step transfer of graphene oxide (GO) paste from transfer paper to the surface of silk fabric and reduction of the GO to reduced graphene oxide (RGO) using a simple hot press treatment. The GO paste was obtained through ultrasonic stirring exfoliation under low temperature, and presented excellent printing rheological properties at high concentration. The silk fabric was obtained a surface electric resistance as low as 12.15 KΩ cm-1, in the concentration of GO 50 g L-1 and hot press at 220 °C for 120 s. Though the whiteness and strength decreased with the increasing of hot press temperature and time slowly, the electric conductivity of RGO surface modification silk substrate improved obviously. The surface electric resistance of RGO/silk fabrics increased from 12.15 KΩ cm-1 to 18.05 KΩ cm-1, 28.54 KΩ cm-1 and 32.53 KΩ cm-1 after 10, 20 and 30 washing cycles, respectively. The results showed that the printed silk substrate circuit has excellent washability. This process requires no chemical reductant, and the reduction efficiency and reduction degree of GO is high. This time-effective and environmentally-friendly one step thermal transfer and reduction graphene oxide onto natural silk substrate method can be easily used to production of reduced graphene oxide (RGO) based flexible printed circuit.

Spatial environmental heterogeneity affects plant growth and thermal performance on a green roof.

PubMed

Buckland-Nicks, Michael; Heim, Amy; Lundholm, Jeremy

2016-05-15

Green roofs provide ecosystem services, including stormwater retention and reductions in heat transfer through the roof. Microclimates, as well as designed features of green roofs, such as substrate and vegetation, affect the magnitude of these services. Many green roofs are partially shaded by surrounding buildings, but the effects of this within-roof spatial environmental heterogeneity on thermal performance and other ecosystem services have not been examined. We quantified the effects of spatial heterogeneity in solar radiation, substrate depth and other variables affected by these drivers on vegetation and ecosystem services in an extensive green roof. Spatial heterogeneity in substrate depth and insolation were correlated with differential growth, survival and flowering in two focal plant species. These effects were likely driven by the resulting spatial heterogeneity in substrate temperature and moisture content. Thermal performance (indicated by heat flux and substrate temperature) was influenced by spatial heterogeneity in vegetation cover and substrate depth. Areas with less insolation were cooler in summer and had greater substrate moisture, leading to more favorable conditions for plant growth and survival. Spatial variation in substrate moisture (7%-26% volumetric moisture content) and temperature (21°C-36°C) during hot sunny conditions in summer could cause large differences in stormwater retention and heat flux within a single green roof. Shaded areas promote smaller heat fluxes through the roof, leading to energy savings, but lower evapotranspiration in these areas should reduce stormwater retention capacity. Spatial heterogeneity can thus result in trade-offs between different ecosystem services. The effects of these spatial heterogeneities are likely widespread in green roofs. Structures that provide shelter from sun and wind may be productively utilized to design higher functioning green roofs and increase biodiversity by providing habitat heterogeneity. Copyright © 2016 Elsevier B.V. All rights reserved.

High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

NASA Astrophysics Data System (ADS)

Asl, Hassan Zare; Rozati, Seyed Mohammad

2018-03-01

In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

Pulsed laser induced heat transfer from a phthalocyanine-based thin film to a Bi, Al-substituted DyIG substrate: photothermal demagnetization observed by magnetic circular dichroism and numerical analysis.

PubMed

Karasawa, Masanobu; Ishii, Kazuyuki

2018-05-03

We have investigated the demagnetization of a ferrimagnetic substrate, Bi, Al-substituted dysprosium iron garnet (Bi0.8Dy2.2Fe4.3Al0.7O12), based on selective pulsed laser irradiation of a molecular thin film consisting of μ-oxo-bis[hydroxyl{2,9(or 10),16(or 17),23(or 24)-tetra-tert-butylphthalocyanato}silicon] ((SiPc)2) and poly(vinylidene fluoride), and succeeded in reproducing photothermal energy transfer from a molecular thin film to an inorganic magnetic substrate in a submicrometer-order and a submicrosecond time scale using numerical analysis. After the instant temperature rise due to nanosecond pulsed laser irradiation of the (SiPc)2-based film, followed by heat transfer from the film to the neighboring magnetic substrate, demagnetization of the magnetic substrate was spectroscopically monitored by the decrease in its magnetic circular dichroism (MCD) intensity. The MCD intensity decreased with increasing pulsed laser energy, which reflects the fact that the submicrometer-order region of the substrate was demagnetized as a result of temperature rise reaching high Curie temperature. This heat transfer phenomenon resulting in the demagnetization of the magnetic substrate was numerically analyzed in a submicrometer-order and a submicrosecond time scale using the finite difference method: the demagnetized regions were calculated to be the same order of magnitude as those experimentally evaluated. These results would provide a more detailed understanding of photothermal energy transfer in organic-inorganic hybrid materials, which would be useful for developing photofunctional materials.

Influence of Substrate Temperature on the Transformation Front Velocities That Determine Thermal Stability of Vapor-Deposited Glasses

DOE PAGES

Dalal, Shakeel S.; Ediger, M. D.

2015-02-09

Stable organic glasses prepared by physical vapor deposition transform into the supercooled liquid via propagating fronts of molecular mobility, a mechanism different from that exhibited by glasses prepared by cooling the liquid. In this paper, we show that spectroscopic ellipsometry can directly observe this front-based mechanism in real time and explore how the velocity of the front depends upon the substrate temperature during deposition. For the model glass former indomethacin, we detect surface-initiated mobility fronts in glasses formed at substrate temperatures between 0.68T g and 0.94T g. At each of two annealing temperatures, the substrate temperature during deposition can changemore » the transformation front velocity by a factor of 6, and these changes are imperfectly correlated with the density of the glass. We also observe substrate-initiated fronts at some substrate temperatures. By connecting with theoretical work, we are able to infer the relative mobilities of stable glasses prepared at different substrate temperatures. Finally, an understanding of the transformation behavior of vapor-deposited glasses may be relevant for extending the lifetime of organic semiconducting devices.« less

Cold adaptation and replicable microbial community development during long-term low-temperature anaerobic digestion treatment of synthetic sewage

PubMed Central

Hughes, D; Mahony, T; Cysneiros, D; Ijaz, U Z; Smith, C J; O'Flaherty, V

2018-01-01

ABSTRACT The development and activity of a cold-adapting microbial community was monitored during low-temperature anaerobic digestion (LtAD) treatment of wastewater. Two replicate hybrid anaerobic sludge bed-fixed-film reactors treated a synthetic sewage wastewater at 12°C, at organic loading rates of 0.25–1.0 kg chemical oxygen demand (COD) m−3 d−1, over 889 days. The inoculum was obtained from a full-scale anaerobic digestion reactor, which was operated at 37°C. Both LtAD reactors readily degraded the influent with COD removal efficiencies regularly exceeding 78% for both the total and soluble COD fractions. The biomass from both reactors was sampled temporally and tested for activity against hydrolytic and methanogenic substrates at 12°C and 37°C. Data indicated that significantly enhanced low-temperature hydrolytic and methanogenic activity developed in both systems. For example, the hydrolysis rate constant (k) at 12°C had increased 20–30-fold by comparison to the inoculum by day 500. Substrate affinity also increased for hydrolytic substrates at low temperature. Next generation sequencing demonstrated that a shift in a community structure occurred over the trial, involving a 1-log-fold change in 25 SEQS (OTU-free approach) from the inoculum. Microbial community structure changes and process performance were replicable in the LtAD reactors. PMID:29846574

Cold adaptation and replicable microbial community development during long-term low-temperature anaerobic digestion treatment of synthetic sewage.

PubMed

Keating, C; Hughes, D; Mahony, T; Cysneiros, D; Ijaz, U Z; Smith, C J; O'Flaherty, V

2018-07-01

The development and activity of a cold-adapting microbial community was monitored during low-temperature anaerobic digestion (LtAD) treatment of wastewater. Two replicate hybrid anaerobic sludge bed-fixed-film reactors treated a synthetic sewage wastewater at 12°C, at organic loading rates of 0.25-1.0 kg chemical oxygen demand (COD) m-3 d-1, over 889 days. The inoculum was obtained from a full-scale anaerobic digestion reactor, which was operated at 37°C. Both LtAD reactors readily degraded the influent with COD removal efficiencies regularly exceeding 78% for both the total and soluble COD fractions. The biomass from both reactors was sampled temporally and tested for activity against hydrolytic and methanogenic substrates at 12°C and 37°C. Data indicated that significantly enhanced low-temperature hydrolytic and methanogenic activity developed in both systems. For example, the hydrolysis rate constant (k) at 12°C had increased 20-30-fold by comparison to the inoculum by day 500. Substrate affinity also increased for hydrolytic substrates at low temperature. Next generation sequencing demonstrated that a shift in a community structure occurred over the trial, involving a 1-log-fold change in 25 SEQS (OTU-free approach) from the inoculum. Microbial community structure changes and process performance were replicable in the LtAD reactors.

The Effect of Temperature and Hydrogen Limited Growth on the Fractionation of Sulfur Isotopes by Thermodesulfatator indicus, a Deep-sea Hydrothermal Vent Sulfate-Reducing Bacterium

NASA Astrophysics Data System (ADS)

Hoek, J.; Reysenbach, A.; Habicht, K.; Canfield, D. E.

2004-12-01

Sulfate-reducing bacteria fractionate sulfur isotopes during dissimilatory sulfate reduction, producing sulfide depleted in 34S. Although isotope fractionation during sulfate reduction of pure cultures has been extensively studied, most of the research to date has focused on mesophilic sulfate reducers, particularly for the species Desulfovibrio desulfuricans. Results from these studies show that: 1) fractionations range from 3-46‰ with an average around 18‰ , 2) when organic electron donors are utilized, the extent of fractionation is dependent on the rate of sulfate reduction, with decreasing fractionations observed with higher specific rates, 3) fractionations are suppressed with low sulfate concentrations, and when hydrogen is used as the electron donor. High specific sulfate-reduction rates are encountered when sulfate-reducing bacteria metabolize at their optimal temperature and under non-limiting substrate conditions. Changes in both temperature and substrate availability could shift fractionations from those expressed under optimal growth conditions. Sulfate reducers may frequently experience substrate limitation and sub-optimal growth temperatures in the environment. Therefore it is important to understand how sulfate-reducing bacteria fractionate sulfur isotopes under conditions that more closely resemble the restrictions imposed by the environment. In this study the fractionation of sulfur isotopes by Thermodesulfatator indicus was explored during sulfate reduction under a wide range of temperatures and with both hydrogen-saturating and hydrogen-limited conditions. T. indicus is a thermophilic (temperature optimum = 70° C) chemolithotrophic sulfate-reducing bacterium, which was recently isolated from a deep-sea hydrothermal vent on the Central Indian Ridge. This bacterium represents the type species of a new genus and to date is the most deeply branching sulfate-reducing bacterium known. T. indicus was grown in carbonate-buffered salt-water medium with H2 as the sole electron donor, and CO2 as primary carbon source. The fractionation of sulfur isotopes was measured in batch cultures and in a thermal gradient block over the full temperature range of growth (40-80° C). For experiments in the gradient block, cell-specific rates of sulfate reduction increased with increasing temperatures to 70° C after which sulfate-reduction rates rapidly decreased. The range of fractionations (1.5-10‰ ) was typical for growth with hydrogen as the electron donor. Fractionations decreased with increasing temperature from 40--60° C, and increased with increasing temperatures from 60-80° C. Growth under H2-limited conditions in a fed-batch culture revealed high fractionations of 24-37‰ . This is the first report of sulfur isotope fractionation under H2 limited growth and indicates that large fractionations are produced when H2 is supplied as a limiting substrate. Our results suggest that fractionation is controlled by the competition of forward and reverse enzymatic reaction rates during sulfate reduction and by sulfate transport into the cell.

Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

DOEpatents

Wood, Richard F.; Young, Rosa T.

1984-01-01

The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

2G HTS wires made on 30 μm thick Hastelloy substrate

NASA Astrophysics Data System (ADS)

Sundaram, A.; Zhang, Y.; Knoll, A. R.; Abraimov, D.; Brownsey, P.; Kasahara, M.; Carota, G. M.; Nakasaki, R.; Cameron, J. B.; Schwab, G.; Hope, L. V.; Schmidt, R. M.; Kuraseko, H.; Fukushima, T.; Hazelton, D. W.

2016-10-01

REBCO (RE = rare earth) based high temperature superconducting (HTS) wires are now being utilized for the development of electric and electromagnetic devices for various industrial, scientific and medical applications. In the last several years, the increasing efforts in using the so-called second generation (2G) HTS wires for some of the applications require a further increase in their engineering current density (J e). The applications are those typically related to high magnetic fields where the higher J e of a REBCO wire, in addition to its higher irreversibility fields and higher mechanical strength, is already a major advantage over other superconducting wires. An effective way to increase the J e is to decrease the total thickness of a wire, for which using a thinner substrate becomes an obvious and attractive approach. By using our IBAD-MOCVD (ion beam assisted deposition-metal organic chemical vapor deposition) technology we have successfully made 2G HTS wires using a Hastelloy® C276 substrate that is only 30 μm in thickness. By using this thinner substrate instead of the typical 50 μm thick substrate and with a same critical current (I c), the J e of a wire can be increased by 30% to 45% depending on the copper stabilizer thickness. In this paper, we report the fabrication and characterization of the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate. It was shown that with the optimization in the processing protocol, the surface of the thinner Hastelloy® C276 substrate can be readily electropolished to the quality needed for the deposition of the buffer stack. Same in the architecture as that on the standard 50 μm thick substrate, the buffer stack made on the 30 μm thick substrate showed an in-plane texture with a Δϕ of around 6.7° in the LaMnO3 cap layer. Low-temperature in-field transport measurement results suggest that the wires on the thinner substrate had achieved equivalent superconducting performance, most importantly the I c, as those on the 50 μm thick substrate. It is expected the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate, the thinnest and with the highest J e to date, will greatly benefit such applications as high field magnets and high current cables.

Nanowire surface fastener fabrication on flexible substrate.

PubMed

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-27

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm -2 ) and low contact resistivity (2.2 × 10 -4 Ω cm 2 ).

Microcontact printing for patterning carbon nanotube/polymer composite films with electrical conductivity.

PubMed

Ogihara, Hitoshi; Kibayashi, Hiro; Saji, Tetsuo

2012-09-26

Patterned carbon nanotube (CNT)/acrylic resin composite films were prepared using microcontact printing (μCP). To prepare ink for μCP, CNTs were dispersed into propylene glycol monomethyl ether acetate (PGMEA) solution in which acrylic resin and a commercially available dispersant (Disperbyk-2001) dissolved. The resulting ink were spin-coated onto poly(dimethylsiloxane) (PDMS) stamps. By drying solvent components from the ink, CNT/polymer composite films were prepared over PDMS stamps. Contact between the stamps and glass substrates provided CNT/polymer composite patternings on the substrates. The transfer behavior of the CNT/polymer composite films depended on the thermal-treatment temperature during μCP; thermal treatment at temperatures near the glass-transition temperature (T(g)) of the acrylic resin was effective to form uniform patternings on substrates. Moreover, contact area between polymer and substrates also affect the transfer behavior. The CNT/polymer composite films showed high electrical conductivity, despite the nonconductivity of polymer components, because CNTs in the films were interconnected. The electrical conductivity of the composite films increased as CNT content in the film became higher; as a result, the composite patternings showed almost as high electrical conductivity as previously reported CNT/polymer bulk composites.

Nanowire surface fastener fabrication on flexible substrate

NASA Astrophysics Data System (ADS)

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-01

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm‑2) and low contact resistivity (2.2 × 10‑4 Ω cm2).

Molecular Dynamics Simulation of Hydrogen Trapping on Sigma 5 Tungsten Grain Boundaries

NASA Astrophysics Data System (ADS)

Al-Shalash, Aws Mohammed Taha

Tungsten as a plasma facing material is the predominant contender for future Tokamak reactor environments. The interaction between the plasma particles and tungsten is crucial to be studied for successful usage and design of tungsten in the plasma facing components ensuring the reliability and longevity of the fusion reactors. The bombardment of the sigma 5 polycrystalline tungsten was modeled using the molecular dynamics simulation through the large-scale atomic/molecular massively parallel simulator (LAMMPS) code and Tersoff type interatomic potential. By simulating the operational conditions of the Tokamak reactors, the hydrogen trapping rate, implantation distribution, and bubble formation was investigated at various temperatures (300-1200 K) and various hydrogen incident energy (20-100 eV). The substrate's temperature increases the deflected H atoms, and increases the penetration depth for the ones that go through. As well, the lower temperature tungsten substrates retain more H atoms. Increasing the bombarded hydrogen's energy increases the trapping and retention rate and the depth of penetration. Another experiments were conducted to determine whether the Sigma5 grain boundary's (GB) location affects the trapping profiles in H. The findings are ranges from small effect on deflection rates at low H energies to no effect at high H energies. However, there is a considerable effect on shifting the trapping depth profile upward toward the surface when raising the GB closer to the surface. Hydrogen atoms are highly mobile on tungsten substrate, yet no bubble formation was witnessed.

Lactate Dehydrogenase Undergoes a Substantial Structural Change to Bind its Substrate

PubMed Central

Qiu, Linlin; Gulotta, Miriam; Callender, Robert

2007-01-01

Employing temperature-jump relaxation spectroscopy, we investigate the kinetics and thermodynamics of the formation of a very early ternary binding intermediate formed when lactate dehydrogenase (LDH) binds a substrate mimic on its way to forming the productive LDH/NADH·substrate Michaelis complex. Temperature-jump scans show two distinct submillisecond processes are involved in the formation of this ternary binding intermediate, called the encounter complex here. The on-rate of the formation of the encounter complex from LDH/NADH with oxamate (a substrate mimic) is determined as a function of temperature and in the presence of small concentrations of a protein destabilizer (urea) and protein stabilizer (TMAO). It shows a strong temperature dependence with inverse Arrhenius behavior and a temperature-dependent enthalpy (heat capacity of 610 ± 84 cal/Mol K), is slowed in the presence of TMAO and speeded up in the presence of urea. These results suggest that LDH/NADH occupies a range of conformations, some competent to bind substrate (open structure; a minority population) and others noncompetent (closed), in fast equilibrium with each other in accord with a select fit model of binding. From the thermodynamic results, the two species differ in the rearrangement of low energy hydrogen bonds as would arise from changes in internal hydrogen bonding and/or increases in the solvation of the protein structure. The binding-competent species can bind ligand at or very near diffusion-limited speeds, suggesting that the binding pocket is substantially exposed to solvent in these species. This would be in contrast to the putative closed structure where the binding pocket resides deep within the protein interior. PMID:17483169

Microstructure and dielectric properties of pyrochlore Bi2Ti2O7 thin films

NASA Astrophysics Data System (ADS)

Cagnon, Joël; Boesch, Damien S.; Finstrom, Nicholas H.; Nergiz, Saide Z.; Keane, Sean P.; Stemmer, Susanne

2007-08-01

Bi2Ti2O7 thin films were grown by radio-frequency magnetron sputtering on bare and Pt-coated sapphire substrates at low substrate temperatures (˜200 °C). Postdeposition anneals were carried out at different temperatures to crystallize the films. Nearly phase-pure Bi2Ti2O7 thin films with the cubic pyrochlore structure were obtained at annealing temperatures up to 800 °C. Impurity phases, in particular Bi4Ti3O12, formed at higher temperatures. At 1 MHz, the dielectric constants were about 140-150 with a very small tunability and the dielectric loss was about 4×10-3. The dielectric loss increased with frequency. The dielectric properties of Bi2Ti2O7 films are compared to those of pyrochlore bismuth zinc niobate films.

Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, W. F.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research; Liu, Z. G.

2013-03-18

Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated withmore » conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.« less

Candida rugosa lipase LIP1-catalyzed transesterification to produce human milk fat substitute.

PubMed

Srivastava, Anita; Akoh, Casimir C; Chang, Shu-Wei; Lee, Guan-Chiun; Shaw, Jei-Fu

2006-07-12

Structured lipids (SLs) containing palmitic and oleic acids were synthesized by transesterification of tripalmitin with either oleic acid or methyl oleate as acyl donor. This SL with palmitic acid at the sn-2 position and oleic acid at sn-1,3 positions is similar in structure to human milk fat triacylglycerol. LIP1, an isoform of Candida rugosa lipase (CRL), was used as biocatalyst. The effects of reaction temperature, substrate molar ratio, and time on incorporation of oleic acid were investigated. Reaction time and temperature were set at 6, 12, and 24 h, and 35, 45, and 55 degrees C, respectively. Substrate molar ratio was varied from 1:1 to 1:4. The highest incorporation of oleic acid (37.7%) was at 45 degrees C with methyl oleate as acyl donor. Oleic acid resulted in slightly lesser (26.3%) incorporation. Generally, higher percentage incorporation of oleic acid was observed with methyl oleate (transesterification) than with oleic acid (acidolysis). In both cases percentage incorporation increased with reaction time. Incorporation decreased with increase in temperature above 45 degrees C. Initially, oleic acid incorporation increased with increase in substrate molar ratio up to 1:3. LIP1 was also compared with Lipozyme RM IM as biocatalysts. The tested reaction parameters were selected on the basis of maximum incorporation of C18:1 obtained during optimization of LIP1 reaction conditions. Reaction temperature was maintained at 45, 55, and 65 degrees C. Lipozyme RM IM gave highest oleic acid incorporation (49.4%) at 65 degrees C with methyl oleate as acyl donor. Statistically significant (P < 0.05) differences were observed for both enzymes. SL prepared using Lipozyme RM IM may be more suitable for possible use in human milk fat substitutes.

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

NASA Astrophysics Data System (ADS)

O'Brien, April; Villegas, Brendon; Gu, J. Y.

2009-01-01

Magnesium diboride (MgB 2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB 2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature ( Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate ( Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB 2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB 2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB 2 heterostructures using rather simple physical vapor deposition method such as sputtering.

Warming accelerates decomposition of decades-old carbon in forest soils.

PubMed

Hopkins, Francesca M; Torn, Margaret S; Trumbore, Susan E

2012-06-26

Global climate carbon-cycle models predict acceleration of soil organic carbon losses to the atmosphere with warming, but the size of this feedback is poorly known. The temperature sensitivity of soil carbon decomposition is commonly determined by measuring changes in the rate of carbon dioxide (CO(2)) production under controlled laboratory conditions. We added measurements of carbon isotopes in respired CO(2) to constrain the age of carbon substrates contributing to the temperature response of decomposition for surface soils from two temperate forest sites with very different overall rates of carbon cycling. Roughly one-third of the carbon respired at any temperature was fixed from the atmosphere more than 10 y ago, and the mean age of respired carbon reflected a mixture of substrates of varying ages. Consistent with global ecosystem model predictions, the temperature sensitivity of the carbon fixed more than a decade ago was the same as the temperature sensitivity for carbon fixed less than 10 y ago. However, we also observed an overall increase in the mean age of carbon respired at higher temperatures, even correcting for potential substrate limitation effects. The combination of several age constraints from carbon isotopes showed that warming had a similar effect on respiration of decades-old and younger (<10 y) carbon but a greater effect on decomposition of substrates of intermediate (between 7 and 13 y) age. Our results highlight the vulnerability of soil carbon to warming that is years-to-decades old, which makes up a large fraction of total soil carbon in forest soils globally.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Formation of SIMOX-SOI structure by high-temperature oxygen implantation

NASA Astrophysics Data System (ADS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-12-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 1017-1018 ions/cm2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

Surface Modification of Plastic Substrates Using Atomic Hydrogen

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

The surface properties of a plastic substrate were changed by a novel surface treatment called atomic hydrogen annealing (AHA). In this method, a plastic substrate was exposed to atomic hydrogen generated by cracking of hydrogen molecules on heated tungsten wire. Surface roughness was increased and halogen elements (F and Cl) were selectively etched by AHA. In addition, plastic surface was reduced by AHA. The surface can be modified by the recombination reaction of atomic hydrogen, the reduction reaction and selective etching of halogen atom. It is concluded that this method is a promising technique for improvement of adhesion between inorganic films and plastic substrates at low temperatures.

Effect of Pd Surface Roughness on the Bonding Process and High Temperature Reliability of Au Ball Bonds

NASA Astrophysics Data System (ADS)

Huang, Y.; Kim, H. J.; McCracken, M.; Viswanathan, G.; Pon, F.; Mayer, M.; Zhou, Y. N.

2011-06-01

A 0.3- μm-thick electrolytic Pd layer was plated on 1 μm of electroless Ni on 1 mm-thick polished and roughened Cu substrates with roughness values ( R a) of 0.08 μm and 0.5 μm, respectively. The rough substrates were produced with sand-blasting. Au wire bonding on the Ni/Pd surface was optimized, and the electrical reliability was investigated under a high temperature storage test (HTST) during 800 h at 250°C by measuring the ball bond contact resistance, R c. The average value of R c of optimized ball bonds on the rough substrate was 1.96 mΩ which was about 40.0% higher than that on the smooth substrate. The initial bondability increased for the rougher surface, so that only half of the original ultrasonic level was required, but the reliability was not affected by surface roughness. For both substrate types, HTST caused bond healing, reducing the average R c by about 21% and 27%, respectively. Au diffusion into the Pd layer was observed in scanning transmission electron microscopy/ energy dispersive spectroscopy (STEM-EDS) line-scan analysis after HTST. It is considered that diffusion of Au or interdiffusion between Au and Pd can provide chemically strong bonding during HTST. This is supported by the R c decrease measured as the aging time increased. Cu migration was indicated in the STEM-EDS analysis, but its effect on reliability can be ignored. Au and Pd tend to form a complete solid solution at the interface and can provide reliable interconnection for high temperature (250°C) applications.

Insights on the High-Temperature Operational Limits of ZrO2-Y2O3 TBCs Manufactured via Air Plasma Spray

NASA Astrophysics Data System (ADS)

Lima, Rogerio S.; Marple, Basil R.

2017-03-01

The effective high-temperature operation limit of a ZrO2-7-8 wt.%Y2O3 (YSZ) thermal barrier coating (TBC) manufactured via air plasma spray (APS) is considered to be 1300 °C. This is related to the metastable tetragonal t'-phase formed during the rapid quenching of the YSZ particles during spraying. The t'-phase transforms into the equilibrium tetragonal and cubic phases at temperatures ≥ 1300 °C, which can lead to the formation of the monoclinic phase of YSZ upon cooling to room temperature. This formation of the monoclinic phase is accompanied by a volume expansion that leads to TBC failure due to extensive micro-cracking. To further investigate this limitation, an APS YSZ TBC was sprayed on a CMSX-4 substrate. By using a thermal (laser) gradient cyclic testing, a temperature gradient was generated across the TBC/substrate system. The YSZ T- front and substrate backside T- back temperature levels were 1500 and 1000 °C, respectively. In cycle conditions (5-min or 1-h hot and 2-min cool), no TBC failure has been observed. This behavior was partially attributed to the unexpected absence of the monoclinic phase of the YSZ in the cycled coatings. Although preliminary, these results are promising regarding increasing the effective high-temperature operational limits of APS YSZ TBCs.

Substrate temperature effect on structural and optical properties of Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Jariwala, B. S.; Shah, D. V.; Kheraj, Vipul

2012-06-01

Structural and optical properties of Bi2Te3 thin films, thermally evaporated on well-cleaned glass substrates at different substrate temperatures, are reported here. X-ray diffraction was carried out for the structural characterization. XRD patterns of the films exhibit preferential orientation along the [0 1 5] direction for the films deposited at all the substrate temperatures together with other supported planes [2 0 5] & [1 1 0]. All other deposition conditions like thickness, deposition rate and pressure were maintained same throughout the experiment. X-ray diffraction lines confirm that the grown films are polycrystalline in nature with hexagonal crystal structure. The effect of substrate temperature on lattice constants, grain size, micro strain, number of crystallites and dislocation density have been investigated and reported in this paper. Also the substrate temperature effect on the optical property has been also investigated using the FTIR spectroscopy.

Investigation of the local structure variance of water molecules in laser-induced thermal desorption process

NASA Astrophysics Data System (ADS)

Ju, Shin-Pon; Weng, Cheng-I.

2004-05-01

This paper presents the use of molecular dynamics simulation in the study of laser-induced thermal desorption (LITD) of water molecules adjacent to a laser-heated Au substrate. The local structure of the water molecules is investigated by considering the densities of the oxygen and hydrogen atoms, the average number of neighbors, nNN, and the average number of H-bonds, nHB. At an equilibrium temperature of 300 K, the simulation results show that three adsorption water layers are formed in the immediate vicinity of the Au surface, and that each four-fold hollow site on the uppermost Au(0 0 1) surface is occupied by a single water molecule. Following laser-induced heating of the Au substrate with a sub-picosecond laser pulse of 350 fs, the substrate temperature increases to 1000 K. This causes a gradual heating of the adjacent water film, which is accompanied by a decrease in the values of nNN and nHB. Hence, it can be concluded that an increase in the water film temperature destroys the hydrogen-bonding network throughout the water film. Although the maximum local temperature of the water film occurs in the region immediately adjacent to the Au substrate, it is determined that the attractive energy between the Au atoms and the water molecules in this region causes the water molecules to aggregate together to form three-dimensional water clusters. Furthermore, this energy prevents the hydrogen bonds in this region from breaking apart as violently as those within the phase explosion region. Finally, it is observed that the phase explosion phenomenon occurs in the region of the water film where the values of nNN and nHB are at a minimum.

Enzymatic production of infant milk fat analogs containing palmitic acid: optimization of reactions by response surface methodology.

PubMed

Maduko, C O; Akoh, C C; Park, Y W

2007-05-01

Infant milk fat analogs resembling human milk fat were synthesized by an enzymatic interesterification between tripalmitin, coconut oil, safflower oil, and soybean oil in hexane. A commercially immobilized 1,3-specific lipase, Lipozyme RM IM, obtained from Rhizomucor miehei was used as a biocatalyst. The effects of substrate molar ratio, reaction time, and incubation temperature on the incorporation of palmitic acid at the sn-2 position of the triacylglycerols were investigated. A central composite design with 5 levels and 3 factors consisting of substrate ratio, reaction temperature, and incubation time was used to model and optimize the reaction conditions using response surface methodology. A quadratic model using multiple regressions was then obtained for the incorporation of palmitic acid at the sn-2 positions of glycerols as the response. The coefficient of determination (R2) value for the model was 0.845. The incorporation of palmitic acid appeared to increase with the decrease in substrate molar ratio and increase in reaction temperature, and optimum incubation time occurred at 18 h. The optimal conditions generated from the model for the targeted 40% palmitic acid incorporation at the sn-2 position were 3 mol/mol, 14.4 h, and 55 degrees C; and 2.8 mol/mol, 19.6 h, and 55 degrees C for substrate ratio (moles of total fatty acid/moles of tripalmitin), time, and temperature, respectively. Infant milk fat containing fatty acid composition and sn-2 fatty acid profile similar to human milk fat was successfully produced. The fat analogs produced under optimal conditions had total and sn-2 positional palmitic acid levels comparable to that of human milk fat.

Controls of Methane Dynamics and Emissions in an Arctic Warming Experiment

NASA Astrophysics Data System (ADS)

Nielsen, C. S.; Elberling, B.; Michelsen, A.; Strobel, B. W.; Wulff, K.; Banyasz, I.

2015-12-01

Climatic changes have resulted in increasing air temperatures across the Arctic. This may increase anaerobic decomposition of soil organic matter to methane (CH4) in wetlands and increase plant growth and thereby production of substrate. Little is known about how seasonal variations in dissolved CH4 in soil water, substrate availability, and the effect of warming affect arctic wetland dynamics of CH4 production and emission. In 2013 we established two experiments in a fen at Disko Island, W Greenland; one with year round warming by open-top chambers and removal of shrubs, and one with removal of the aerenchymatous sedge Carex aquatilis ssp. stans. Throughout the growing season 2014 we measured how the treatments affected CH4 emissions, dissolved CH4 in the soil water, and substrate availability. Ecosystem CH4 emissions peaked at August 5th 2014 (7.5 μmol m-2 h-1) without coinciding with time of highest concentrations of dissolved CH4 or acetate indicating a decoupling between production and emission of CH4. The peak in dissolved CH4 concentration, at ten cm depth (1368 ppm, September 18th 2014), followed the peak in concentration of acetate in the same depth (0.30 ppm, August 30th 2014) highlighting the importance of this substance as a substrate for methanogenesis. C. aquatilis ssp. stans accounted for 60% and 77% of the ecosystem CH4 emissions in areas of the fen with water table above and below soil surface showing the importance of the presence of this species to serve as a pipe for CH4 emission which is bypassing the upper soil zone and potential methane oxidation. Throughout the season, warming increased the air temperature at soil surface by on average 0.89°C and occasionally warming and shrub removal increased soil temperature in 2 and 5 cm depth, but there was no effect of the treatments on the CH4 emissions indicating that this wetland is quite resilient towards future climate change.

Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates

NASA Astrophysics Data System (ADS)

Padavala, Balabalaji

The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, AlN/sapphire proved to be the best choice for BP epitaxy, even though it did not eliminate rotational twinning in BP. The substrates investigated in this work were found to be viable for BP epitaxy and show promising potential for further enhancement of BP properties.

Aqueous solution epitaxy of CdS layers on CuInSe 2

NASA Astrophysics Data System (ADS)

Furlong, M. J.; Froment, M.; Bernard, M. C.; Cortès, R.; Tiwari, A. N.; Krejci, M.; Zogg, H.; Lincot, D.

1998-09-01

Epitaxial CdS thin films have been deposited from an aqueous ammonia solution containing cadmium ions and thiourea as precursors on single crystalline CuInSe 2 films prepared by MBE on Si(1 1 1) and GaAs(1 0 0) substrates. The structure and quality of the films were investigated by RHEED, glancing angle XRD and HRTEM in cross-section. The films are cubic on (1 0 0) substrates, and mixed cubic and hexagonal on (1 1 1) substrates due to the presence of stacking faults parallel to the substrate. The growth is under surface kinetic control with an activation energy of 85 kJ mol -1. Epitaxy improves with increasing temperature and an epitaxial transition temperature at approx. 60°C is demonstrated in the selected experimental conditions. The epitaxy is very sensitive to the preparation of the surface. Beneficial effects of in situ or ex situ chemical etching are found. Similarities between aqueous solution and vapor-phase chemical depositions are pointed out.

Laser-induced crystallization of calcium phosphate coatings on polyethylene (PE).

PubMed

Feddes, Bastiaan; Vredenberg, Arjen M; Wehner, Martin; Wolke, Joop C G; Jansen, John A

2005-05-01

Calcium phosphate (CaP) coatings are used for obtaining a desired biological response. Usually, CaP coatings on metallic substrates are crystallized by annealing at temperatures of at least 400-600 degrees C. For polymeric substrates, this annealing is not possible due to the low melting temperatures. In this work, we present a more suitable method for obtaining crystalline coatings on polymeric substrates, namely laser crystallization. We were successful in obtaining hydroxyapatite coatings on polyethylene. Because of the UV transmission characteristics of the CaP coatings, the use of a low wavelength (157 nm) F(2) laser was necessary for this. As a result of the laser treatment, the CaP coating broke up into islands. The cracks between the islands became larger and the surface became porous with increasing laser energy. The mechanism behind the formation of this morphology did not become clear. However, the fact that crystalline CaP coatings can be obtained on polymeric substrates in an easy way, possibly allows for the development of new products.

Multiple indices of soil nitrogen status and temperature regulate microbial C allocation to CO2, substrate choices, and contributions to SOM

NASA Astrophysics Data System (ADS)

Billings, S. A.; Ziegler, S. E.

2012-12-01

The response of microbial resource demand to many environmental variables, including temperature and natural organic and inorganic N variability, remains poorly understood. Furthermore, we do not understand how these variables can influence CO2 release vs. C retention in cell walls, which as microbial necromass can generate long-lived soil organic matter (SOM). We explore microbial resource demand and C retention vs. release in one temperate forest and two boreal forests along a climate gradient. We characterized SOM C:N and inorganic N, extracellular enzyme activity (E), and phospholipid fatty acid (PLFA) concentration and δ13C. Experimental warming permitted us to assess how interactions between soil N status and warming influence resource demand and C flows through microbes in the two boreal soils. For all soils, we used δ13C of respired CO2 and δ13CPLFA to generate indices of C allocation to biomass vs. to respiratory costs (Δ), useful for cross-site comparisons. Decreasing values of Δ indicate a greater proportion of 13C-enriched C allocated to respiration relative to PLFA-C; changes in Δ with warming or N status thus imply that these variables can influence the physiological mechanisms determining the fate of microbial C after it is imported into the cell. We thus were able to assess the influence of soil N status and warming on substrate decay via E, the fate of microbial C from diverse substrates via Δ, and one index of microbial composition relevant to SOM formation [PLFA]. In all soils, E often varied with N status in ways predicted by stoichiometric theory. For example, the ratio of exo-enzymes associated with labile C decay to those linked to organic N decay (EC:N) increased with inorganic N, and EC:N declined as substrate C:N increased. In contrast to measures of decay, all soils exhibited distinct responses of microbial composition and C allocation to N status and warming. In the temperate forest soils, Gram+ bacteria responded positively to organic N availability and Gram- bacteria to inorganic N, while fungi responded positively to declines in both measures of soil N status. In the more northern boreal soils, actinomycete [PLFA] increased with inorganic N, while that of more southern boreal soils increased with substrate C:N; in both boreal soils, Gram+ bacteria increased with temperature. Given that cell walls of these microbes exhibit distinct propensities for forming long-lived SOM, our work illustrates how similar variation in N status and temperature can drive divergent patterns of biomass relevant to SOM formation. Sensitivity of patterns of C allocation to these variables also contrasted between these soils. In the temperate soils, Δ did not vary with soil N status nor with E, implying that microbes' C allocation patterns were not driven N status or by the C's organic precursor. In both boreal soils, Δ declined with warming, and as EC or EC:N increased. Though N status of the boreal soils drove resource demand similarly as in the temperate forest, the fate of boreal microbial C varied with N status and temperature. Because microbial C substrate use varied with warming in the boreal soils, Δ highlights how the fate of microbial C may vary with the identity of its organic precursor, which in turn is influenced by environmental conditions like temperature and soil N status.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2 at Various Substrate Temperatures

NASA Astrophysics Data System (ADS)

Tabata, Akimori; Komura, Yusuke; Hoshide, Yoshiki; Narita, Tomoki; Kondo, Akihiro

2008-01-01

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H2 gases, and the influence of substrate temperature, Ts (104 < Ts < 434 °C), on the properties of the SiC thin films was investigated. X-ray diffraction patterns and Raman scattering spectra revealed that nanocrystalline cubic SiC (nc-3C-SiC) films grew at Ts above 187 °C, while completely amorphous films grew at Ts = 104 °C. Fourier transform infrared absorption spectra revealed that the crystallinity of the nc-3C-SiC was improved with increasing Ts up to 282 °C and remained almost unchanged with a further increase in Ts from 282 to 434 °C. The spin density was reduced monotonically with increasing Ts.

Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

NASA Astrophysics Data System (ADS)

Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

2018-02-01

The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

Effect of substrate and post-deposition annealing on nanostructure and optical properties of CdTe thin films

NASA Astrophysics Data System (ADS)

Hasani, Ebrahim; Raoufi, Davood

2018-04-01

Thermal evaporation is one of the promising methods for depositing CdTe thin films, which can obtain the thin films with the small thickness. In this work, CdTe nanoparticles have deposited on SiO2 substrates such as quartz (crystal) and glass (amorphous) at a temperature (Ts) of 150 °C under a vacuum pressure of 2 × 10‑5 mbar. The thickness of CdTe thin films prepared under vacuum pressure is 100 nm. X-ray diffraction analysis (XRD) results showed the formation of CdTe cubic phase with a strong preferential orientation of (111) crystalline plane on both substrates. The grain size (D) in this orientation obtained about 7.41 and 5.48 nm for quartz and glass respectively. Ultraviolet-visible spectroscopy (UV–vis) measurements indicated the optical band gap about 1.5 and 1.52 eV for CdTe thin films deposited on quartz and glass respectively. Furthermore, to show the effect of annealing temperature on structure and optical properties of CdTe thin films on quartz and glass substrates, the thin films have been annealed at temperatures 50 and 70 °C for one hour. The results of this work indicate that the structure’s parameters and optical properties of CdTe thin films change due to increase in annealing temperature.

Influence of Impact Conditions on Feedstock Deposition Behavior of Cold-Sprayed Fe-Based Metallic Glass

NASA Astrophysics Data System (ADS)

Ziemian, Constance W.; Wright, Wendelin J.; Cipoletti, David E.

2018-05-01

Cold spray is a promising method by which to deposit dense Fe-based metallic glass coatings on conventional metal substrates. Relatively low process temperatures offer the potential to prevent the crystallization of amorphous feedstock powders while still providing adequate particle softening for bonding and coating formation. In this study, Fe48Mo14Cr15Y2C15B6 powder was sprayed onto a mild steel substrate, using a variety of process conditions, to investigate the feasibility of forming well-bonded amorphous Fe-based coatings. Particle splat adhesion was examined relative to impact conditions, and the limiting values of temperature and velocity associated with successful softening and adhesion were empirically established. Variability of particle sizes, impact temperatures, and impact velocities resulted in splat morphologies ranging from well-adhered deformed particles to substrate craters formed by rebounded particles and a variety of particle/substrate interface conditions. Transmission electron microscopy studies revealed the presence of a thin oxide layer between well-adhered particles and the substrate, suggesting that bonding is feasible even with an increased oxygen content at the interface. Results indicate that the proper optimization of cold spray process parameters supports the formation of Fe-based metallic glass coatings that successfully retain their amorphous structure, as well as the superior corrosion and wear-resistant properties of the feedstock powder.

78 FR 59555 - Endangered and Threatened Wildlife and Plants; Designation of Critical Habitat for the Fluted...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-26

... physical and chemical water quality parameters (such as temperature, dissolved oxygen, pH, and conductivity... unknown. High temperatures can reduce dissolved oxygen concentrations in the water, which slows growth... encystment, increase oxygen consumption, reduce the speed in which they orient themselves in the substrate...

Evidence for proton tunneling and a transient covalent flavin-substrate adduct in choline oxidase S101A.

PubMed

Uluisik, Rizvan; Romero, Elvira; Gadda, Giovanni

2017-11-01

The effect of temperature on the reaction of alcohol oxidation catalyzed by choline oxidase was investigated with the S101A variant of choline oxidase. Anaerobic enzyme reduction in a stopped-flow spectrophotometer was biphasic using either choline or 1,2-[ 2 H 4 ]-choline as a substrate. The limiting rate constants k lim1 and k lim2 at saturating substrate were well separated (k lim1 /k lim2 >9), and were >15-fold slower than for wild-type choline oxidase. Solvent deuterium kinetic isotope effects (KIEs) ~4 established that k lim1 probes the proton transfer from the substrate hydroxyl to a catalytic base. Primary substrate deuterium KIEs ≥7 demonstrated that k lim2 reports on hydride transfer from the choline alkoxide to the flavin. Between 15°C and 39°C the k lim1 and k lim2 values increased with increasing temperature, allowing for the analyses of H + and H - transfers using Eyring and Arrhenius formalisms. Temperature-independent KIE on the k lim1 value ( H2O k lim1 / D2O k lim1 ) suggests that proton transfer occurs within a highly reorganized tunneling-ready-state with a narrow distribution of donor-acceptor distances. Eyring analysis of the k lim2 value gave lines with the slope (choline) >slope (D-choline) , suggesting kinetic complexity. Spectral evidence for the transient occurrence of a covalent flavin-substrate adduct during the first phase of the anaerobic reaction of S101A CHO with choline is presented, supporting the notion that an important role of amino acid residues in the active site of flavin-dependent enzymes is to eliminate alternative reactions of the versatile enzyme-bound flavin for the reaction that needs to be catalyzed. Copyright © 2017 Elsevier B.V. All rights reserved.

Parallel-line number dependence of magneto-impedance effect in multilayer permalloy [Ni80Fe20/Cu]N films

NASA Astrophysics Data System (ADS)

Yohanasari, R. H.; Utari; Purnama, B.

2017-11-01

In this paper, we studied the magneto-impedance effect in multilayered [Ni80Fe20/Cu]N with variation in the number of parallel-line on Cu PCB substrate. The method used in this research is the electrodeposition at a room temperature with Pt as an electrode. The results show that the magneto-impedance ratio increases with the increase in the number of parallel-line on Cu PCB. The maximum magneto-impedance ratio obtained in Cu PCB substrate which four parallel lines were 4.5%. Likewise, frequency variation, the magneto-impedance ratio increases with increasing frequency.

Method for single crystal growth of photovoltaic perovskite material and devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jinsong; Dong, Qingfeng

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Mechanically Robust, Stretchable Solar Absorbers with Submicron-Thick Multilayer Sheets for Wearable and Energy Applications.

PubMed

Lee, Hye Jin; Jung, Dae-Han; Kil, Tae-Hyeon; Kim, Sang Hyeon; Lee, Ki-Suk; Baek, Seung-Hyub; Choi, Won Jun; Baik, Jeong Min

2017-05-31

A facile method to fabricate a mechanically robust, stretchable solar absorber for stretchable heat generation and an enhanced thermoelectric generator (TEG) is demonstrated. This strategy is very simple: it uses a multilayer film made of titanium and magnesium fluoride optimized by a two-dimensional finite element frequency-domain simulation, followed by the application of mechanical stresses such as bending and stretching to the film. This process produces many microsized sheets with submicron thickness (∼500 nm), showing great adhesion to any substrates such as fabrics and polydimethylsiloxane. It exhibits a quite high light absorption of approximately 85% over a wavelength range of 0.2-4.0 μm. Under 1 sun illumination, the solar absorber on various stretchable substrates increased the substrate temperature to approximately 60 °C, irrespective of various mechanical stresses such as bending, stretching, rubbing, and even washing. The TEG with the absorber on the top surface also showed an enhanced output power of 60%, compared with that without the absorber. With an incident solar radiation flux of 38.3 kW/m 2 , the output power significantly increased to 24 mW/cm 2 because of the increase in the surface temperature to 141 °C.

Thermally enhanced in situ bioremediation of groundwater contaminated with chlorinated solvents - A field test.

PubMed

Němeček, Jan; Steinová, Jana; Špánek, Roman; Pluhař, Tomáš; Pokorný, Petr; Najmanová, Petra; Knytl, Vladislav; Černík, Miroslav

2018-05-01

In situ bioremediation (ISB) using reductive dechlorination is a widely accepted but relatively slow approach compared to other technologies for the treatment of groundwater contaminated by chlorinated ethenes (CVOCs). Due to the known positive kinetic effect on microbial metabolism, thermal enhancement may be a viable means of accelerating ISB. We tested thermally enhanced ISB in aquifers situated in sandy saprolite and underlying fractured granite. The system comprised pumping, heating and subsequent injection of contaminated groundwater aiming at an aquifer temperature of 20-30°C. A fermentable substrate (whey) was injected in separate batches. The test was monitored using hydrochemical and molecular tools (qPCR and NGS). The addition of the substrate and increase in temperature resulted in a rapid increase in the abundance of reductive dechlorinators (e.g., Dehalococcoides mccartyi, Dehalobacter sp. and functional genes vcrA and bvcA) and a strong increase in CVOC degradation. On day 34, the CVOC concentrations decreased by 87% to 96% in groundwater from the wells most affected by the heating and substrate. On day 103, the CVOC concentrations were below the LOQ resulting in degradation half-lives of 5 to 6days. Neither an increase in biomarkers nor a distinct decrease in the CVOC concentrations was observed in a deep well affected by the heating but not by the substrate. NGS analysis detected Chloroflexi dechlorinating genera (Dehalogenimonas and GIF9 and MSBL5 clades) and other genera capable of anaerobic metabolic degradation of CVOCs. Of these, bacteria of the genera Acetobacterium, Desulfomonile, Geobacter, Sulfurospirillum, Methanosarcina and Methanobacterium were stimulated by the substrate and heating. In contrast, groundwater from the deep well (affected by heating only) hosted representatives of aerobic metabolic and aerobic cometabolic CVOC degraders. The test results document that heating of the treated aquifer significantly accelerated the treatment process but only in the case of an abundant substrate. Copyright © 2017. Published by Elsevier B.V.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

1998-02-03

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

High-temperature wear and oxidation behaviors of TiNi/Ti2Ni matrix composite coatings with TaC addition prepared on Ti6Al4V by laser cladding

NASA Astrophysics Data System (ADS)

Lv, Y. H.; Li, J.; Tao, Y. F.; Hu, L. F.

2017-04-01

TiNi/Ti2Ni matrix composite coatings were produced on Ti6Al4V surfaces by laser cladding the mixed powders of Ni-based alloy and different contents of TaC (0, 5, 10, 15, 20, 30 and 40 wt.%). Microstructures of the coatings were investigated. High-temperature wear tests of the substrate and the coatings were carried out at 600 °C in air for 30 min. High-temperature oxidation tests of the substrate and the coatings were performed at 1000 °C in air for 50 h. Wear and oxidation mechanisms were revealed in detail. The results showed that TiNi/Ti2Ni as the matrix and TiC/TiB2/TiB as the reinforcements are the main phases of the coatings. The friction coefficients of the substrate and the coatings with different contents of TaC were 0.431 (the substrate), 0.554 (0 wt.%), 0.486 (5 wt.%), 0.457 (10 wt.%), 0.458 (15 wt.%), 0.507 (20 wt.%), 0.462 (30 wt.%) and 0.488 (40 wt.%). The wear rates of the coatings were decreased by almost 83%-98% than that of the substrate and presented a decreasing tendency with increasing TaC content. The wear mechanism of the substrate was a combination of serious oxidation, micro-cutting and brittle debonding. For the coatings, oxidation and slight scratching were predominant during wear, accompanied by slight brittle debonding in partial zones. With the increase in content of TaC, the oxidation film better shielded the coatings from destruction due to the effective friction-reducing role of Ta2O5. The oxidation rates of the substrate and the coatings with different contents of TaC at 1000 °C were 12.170 (the substrate), 5.886 (0 wt.%), 4.937 (5 wt.%), 4.517 (10 wt.%), 4.394 (15 wt.%), 3.951 (20 wt.%), 4.239 (30 wt.%) and 3.530 (40 wt.%) mg2 cm-4 h-1, respectively. The oxidation film formed outside the coating without adding TaC was composed of TiO2, NiO, Cr2O3, Al2O3 and SiO2. When TaC was added, Ta2O5 and TaC were also detected, which effectively improved the oxidation resistance of the coatings. The addition of TaC contributed to the improvement in high-temperature wear and oxidation resistance.

Method for wetting a boron alloy to graphite

DOEpatents

Storms, E.K.

1987-08-21

A method is provided for wetting a graphite substrate and spreading a a boron alloy over the substrate. The wetted substrate may be in the form of a needle for an effective ion emission source. The method may also be used to wet a graphite substrate for subsequent joining with another graphite substrate or other metal, or to form a protective coating over a graphite substrate. A noneutectic alloy of boron is formed with a metal selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) with excess boron, i.e., and atomic percentage of boron effective to precipitate boron at a wetting temperature of less than the liquid-phase boundary temperature of the alloy. The alloy is applied to the substrate and the graphite substrate is then heated to the wetting temperature and maintained at the wetting temperature for a time effective for the alloy to wet and spread over the substrate. The excess boron is evenly dispersed in the alloy and is readily available to promote the wetting and spreading action of the alloy. 1 fig.

Magnetoresistivity of thin YBa2Cu3O7-δ films on sapphire substrate

NASA Astrophysics Data System (ADS)

Probst, Petra; Il'in, Konstantin; Engel, Andreas; Semenov, Alexei; Hübers, Heinz-Wilhelm; Hänisch, Jens; Holzapfel, Bernhardt; Siegel, Michael

2012-09-01

Magnetoresistivity of YBa2Cu3O7-δ films with thicknesses between 7 and 100 nm deposited on CeO2 and PrBa2Cu3O7-δ buffer layers on sapphire substrate has been measured to analyze the temperature dependence of the second critical magnetic field Bc2. To define Bc2, the mean-field transition temperature Tc was evaluated by fitting the resistive transition in zero magnetic field with the fluctuation conductivity theory of Aslamazov and Larkin. At T → Tc the Bc2(T) dependence shows a crossover from downturn to upturn curvature with the increase in film thickness.

Influence of deposition substrate temperature on the morphology and molecular orientation of chloroaluminum phthalocyanine films as well the performance of organic photovoltaic cells.

PubMed

Zheng, Yan-Qiong; Zhang, Jing; Yang, Fang; Komino, Takeshi; Wei, Bin; Zhang, Jianhua; Wang, Zixing; Pu, Wenhong; Yang, Changzhu; Adachi, Chihaya

2015-10-09

The dependence of the morphology of neat chloroaluminum phthalocyanine (ClAlPc) films on substrate temperature (Tsub) during deposition is investigated by variable angle spectroscopic ellipsometry (VASE), x-ray diffraction (XRD), and atomic force microscopy (AFM) to obtain detailed information about the molecular orientation, phase separation, and crystallinity. AFM images indicate that both grain size and root mean square (RMS) roughness noticeably increase with Tsub both in neat and blend films. Increasing Tsub from room temperature to 420 K increases the horizontal orientation of the ClAlPc molecules with an increase of the mean molecular tilt angle from 60.13° (300 K) to 65.86° (420 K). The UV-vis absorption band of the corresponding films increases and the peak wavelength slightly red shifts with the Tsub increase. XRD patterns show a clear diffraction peak at Tsub over 390 K, implying the π-stacking of interconnected ClAlPc molecules at high Tsub. Planar and bulk heterojunction (BHJ) photovoltaic cells containing pristine ClAlPc films and ClAlPc:C60 blend films fabricated at Tsub of 390 K show increases in the power conversion efficiency (ηPCE) of 28% (ηPCE = 3.12%) and 36% (ηPCE = 3.58%), respectively, relative to devices as-deposited at room temperature. The maximum short circuit current in BHJs is obtained at 390 K in the Tsub range from 300 K to 450 K.

ELLIPSOMETRIC MEASUREMENTS OF THE THERMAL STABILITY OF ALTERNATIVE FUELS

PubMed Central

Nash, Leigh; Klettlinger, Jennifer; Vasu, Subith

2017-01-01

Thermal stability is an important characteristic of alternative fuels that must be evaluated before they can be used in aviation engines. Thermal stability refers to the degree to which a fuel breaks down when it is heated prior to combustion. This characteristic is of great importance to the effectiveness of the fuel as a coolant and to the engine’s combustion performance. The thermal stability of Sasol IPK, a synthetic alternative to Jet-A, with varying levels of naphthalene has been studied on aluminum and stainless steel substrates at 300 to 400 °C. This was conducted using a spectroscopic ellipsometer to measure the thickness of deposits left on the heated substrates. Ellipsometry is an optical technique that measures the changes in a light beam’s polarization and intensity after it reflects from a thin film to determine the film’s physical and optical properties. It was observed that, as would be expected, increasing the temperature minimally increased the deposit thickness for a constant concentration of naphthalene on both substrates. The repeatability of these measurements was verified using multiple trials at identical test conditions. Lastly, the effect of increasing the naphthalene concentration at a constant temperature was found to also minimally increase the deposit thickness. PMID:28966427

Electrical transport properties of small diameter single-walled carbon nanotubes aligned on ST-cut quartz substrates

PubMed Central

2014-01-01

A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the measured SWNTs are accurately defined from Raman spectroscopy and atomic force microscopy (AFM). A significant up-shift in the G-band of the resonance Raman spectra of the SWNTs is observed, which increases with increasing SWNTs diameter, and indicates a strong interaction with the quartz substrate. A semiconducting SWNT, with diameter 0.84 nm, shows Tomonaga-Luttinger liquid and Coulomb blockade behaviors at low temperatures. Another semiconducting SWNT, with a thinner diameter of 0.68 nm, exhibits a transition from the semiconducting state to an insulating state at low temperatures. These results elucidate some of the electrical properties of SWNTs in this unique configuration and help pave the way towards prospective device applications. PMID:25170326

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Anisotropic pyrochemical microetching of poly(tetrafluoroethylene) initiated by synchrotron radiation-induced scission of molecule bonds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamaguchi, Akinobu, E-mail: yamaguti@lasti.u-hyogo.ac.jp, E-mail: utsumi@lasti.u-hyogo.ac.jp; Kido, Hideki; Utsumi, Yuichi, E-mail: yamaguti@lasti.u-hyogo.ac.jp, E-mail: utsumi@lasti.u-hyogo.ac.jp

2016-02-01

We developed a process for micromachining polytetrafluoroethylene (PTFE): anisotropic pyrochemical microetching induced by synchrotron X-ray irradiation. X-ray irradiation was performed at room temperature. Upon heating, the irradiated PTFE substrates exhibited high-precision features. Both the X-ray diffraction peak and Raman signal from the irradiated areas of the substrate decreased with increasing irradiation dose. The etching mechanism is speculated as follows: X-ray irradiation caused chain scission, which decreased the number-average degree of polymerization. The melting temperature of irradiated PTFE decreased as the polymer chain length decreased, enabling the treated regions to melt at a lower temperature. The anisotropic pyrochemical etching process enabledmore » the fabrication of PTFE microstructures with higher precision than simultaneously heating and irradiating the sample.« less

Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO{sub 3}(110)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Guanyu; Zhang, Ding; Liu, Chong

2016-05-16

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on SrTiO{sub 3} (STO)(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling microscopy measurement, we observe a superconducting gap as large as 17 meV on the 1-UC FeSe films. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset transition temperature (T{sub C}) of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that T{sub C} can be further increased by external electric field although the effect is weaker than that on STO(001) substrate.

Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth

NASA Astrophysics Data System (ADS)

Kolíbal, Miroslav; Pejchal, Tomáš; Musálek, Tomáš; Šikola, Tomáš

2018-05-01

Understanding of the initial stage of nanowire growth on a bulk substrate is crucial for the rational design of nanowire building blocks in future electronic and optoelectronic devices. Here, we provide in situ scanning electron microscopy and Auger microscopy analysis of the initial stage of Au-catalyzed Ge nanowire growth on different substrates. Real-time microscopy imaging and elementally resolved spectroscopy clearly show that the catalyst dissolves the underlying substrate if held above a certain temperature. If the substrate dissolution is blocked (or in the case of heteroepitaxy) the catalyst needs to be filled with nanowire material from the external supply, which significantly increases the initial growth delay. The experiments presented here reveal the important role of the substrate in metal-catalyzed nanowire growth and pave the way for different growth delay mitigation strategies.

Catalyst-substrate interaction and growth delay in vapor-liquid-solid nanowire growth.

PubMed

Kolíbal, Miroslav; Pejchal, Tomáš; Musálek, Tomáš; Šikola, Tomáš

2018-05-18

Understanding of the initial stage of nanowire growth on a bulk substrate is crucial for the rational design of nanowire building blocks in future electronic and optoelectronic devices. Here, we provide in situ scanning electron microscopy and Auger microscopy analysis of the initial stage of Au-catalyzed Ge nanowire growth on different substrates. Real-time microscopy imaging and elementally resolved spectroscopy clearly show that the catalyst dissolves the underlying substrate if held above a certain temperature. If the substrate dissolution is blocked (or in the case of heteroepitaxy) the catalyst needs to be filled with nanowire material from the external supply, which significantly increases the initial growth delay. The experiments presented here reveal the important role of the substrate in metal-catalyzed nanowire growth and pave the way for different growth delay mitigation strategies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crabtree, D.J.

Three types of boron/epoxy prepreg tape were prestressed to fracture weak sites along the fiber by winding over 0.3- to 0.6-inch diameter rollers prior to lamination. The prestressed prepreg was then laminated, and design allowable testing was conducted to determine if mechanical strength properties are increased and data scatter is reduced by prestressing. The types of prepreg studied were standard 'Rigidite' 5505/4 prepreg, carbon substrate boron fiber prepreg, and a prepreg made from 'defect' tungsten substrate boron that was manufactured in a high-speed, low-cost, production process. The strength of angleply composites of both 'Rigidite' 5505/4 and carbon substrate boron compositesmore » were unaffected by prestressing. A study was made to determine if prepreg costs could be reduced by manufacturing low-cost 'defect' boron fiber and prestressing it to improve its properties. The results of this study were inconclusive. The test results show prestressing marginally improved some composite properties while others were reduced. On 'Rigidite' 5505/4 unidirectional composites, fatigue strength was significantly improved by prestressing, while longitudinal tensile strength was reduced at room temperature and 350 F. On unidirectional carbon substrate boron composites, the longitudinal tensile strength at room temperature and 350F was increased with attendant variability, while fatigue strength at high stress levels was reduced but not affected at low stress levels.« less

Synthesis of transparent BaTiO3 nanoparticle/polymer composite film using DC field

NASA Astrophysics Data System (ADS)

Kondo, Yusuke; Okumura, Yasuko; Oi, Chifumi; Sakamoto, Wataru; Yogo, Toshinobu

2008-10-01

Transparent BaTiO3 nanoparticle/polymer composite films were synthesized from titanium-organic film and barium ion in aqueous solution under direct current (DC) field. Titanium-organic precursor was synthesized from titanium isopropoxide, acetylacetone and methacrylate derivative. The UV treatment was effective to increase the anti-solubility of the titanium-organic film during DC processing. BaTiO3 nanoparticles were crystallized in the precursor films on stainless substrates without high temperature process, as low as 40°C. The crystallite size of BaTiO3 increased with increasing reaction temperature from 40 to 50 °C at 3.0 V/cm. BaTiO3 nanoparticles also grew in size with increasing reaction time from 15 min to 45 min at 3.0 V/cm and 50 °C. Transparent BaTiO3 nanoparticle/polymer films were synthesized on stainless substrates at 3.0 V/cm and 50°C for 45 min.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1985-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1984-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique

DOEpatents

Molenbroek, Edith C.; Mahan, Archie Harvin; Gallagher, Alan C.

2000-09-26

A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.; and flowing silicohydride gas into the deposition chamber with said heated filament, decomposing said silicohydride gas into silicon and hydrogen atomic species and allowing products of gas reactions between said atomic species and the silicohydride gas to migrate to and deposit on said substrate while adjusting and maintaining said pressure times substrate-filament spacing in said deposition chamber at a value in said 10 to 100 millitorr range to produce statistically about 3 to 50 atomic collisions between the silicon and hydrogen atomic species migrating to said substrate and undecomposed molecules of the silane or other silicohydride gas in the deposition chamber.

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

NASA Astrophysics Data System (ADS)

Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

2000-11-01

Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadoh, Taizoh, E-mail: sadoh@ed.kyushu-u.ac.jp; Chikita, Hironori; Miyao, Masanobu

2015-09-07

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%–26%) and annealing conditions (300–1000 °C, 1 s–48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealingmore » (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.« less

Warming accelerates decomposition of decades-old carbon in forest soils

DOE PAGES

Hopkins, F. M.; Torn, M. S.; Trumbore, S. E.

2012-06-11

Global climate carbon-cycle models predict acceleration of soil organic carbon losses to the atmosphere with warming, but the size of this feedback is poorly known. The temperature sensitivity of soil carbon decomposition is commonly determined by measuring changes in the rate of carbon dioxide (CO 2) production under controlled laboratory conditions. We added measurements of carbon isotopes in respired CO 2 to constrain the age of carbon substrates contributing to the temperature response of decomposition for surface soils from two temperate forest sites with very different overall rates of carbon cycling. Roughly one-third of the carbon respired at any temperaturemore » was fixed from the atmosphere more than 10 y ago, and the mean age of respired carbon reflected a mixture of substrates of varying ages. Consistent with global ecosystem model predictions, the temperature sensitivity of the carbon fixed more than a decade ago was the same as the temperature sensitivity for carbon fixed less than 10 y ago. However, we also observed an overall increase in the mean age of carbon respired at higher temperatures, even correcting for potential substrate limitation effects. The combination of several age constraints from carbon isotopes showed that warming had a similar effect on respiration of decades-old and younger (<10 y) carbon but a greater effect on decomposition of substrates of intermediate (between 7 and 13 y) age. Our results highlight the vulnerability of soil carbon to warming that is years-to-decades old, which makes up a large fraction of total soil carbon in forest soils globally.« less

Adhesion of in situ precipitated calcium carbonate in the presence and absence of magnetic field in quiescent conditions on different solid surfaces.

PubMed

Chibowski, Emil; Hołysz, Lucyna; Szcześ, Aleksandra

2003-11-01

Deposition of in situ precipitated calcium carbonate from Na(2)CO(3) and CaCl2 solutions on different substrates, i.e. stainless steel, copper, aluminium, and glass, was investigated at different temperatures, 20 degrees C, 40 degrees C, 60 degrees C and 80 degrees C, both in the absence and presence of S-S 0.1T magnetic field (MF). It was found that in quiescent conditions during 2h the amounts deposited firmly on the surfaces decreased with increasing temperature. If MF was present the deposition was reduced at all temperatures, and depended on the nature of the substrate. The largest MF effect was found on glass at 60 degrees C, which amounted 50% reduction of the deposit. However, at 80 degrees C no deposition was found in the presence of MF on aluminium surface. At this temperature the reproducibility of the experiments was poor, and an additional effect due to the metal surface corrosion (especially that of aluminium and copper) may be thought in alkaline environment of the experiments (pH ca. 10). Based on optical microscope photographs, it was concluded that the amounts of crystallographic forms of CaCO3 depended on the nature of substrate on which the precipitation and then the adhesion took place. To some extent the ratios of CaCO3 forms precipitated were different in the bulk phase than on the substrate surfaces at the same temperature, and this conclusion was based on the X-ray diffractograms. Some possible mechanisms causing MF effects are discussed.

Species Profiles. Life Histories and Environmental Requirements of Coastal Fishes and Invertebrates (Pacific Northwest). Dungeness Crab.

DTIC Science & Technology

1986-08-01

variety of factors crab eggs has been linked to increased including depth, latitude, tempera- egg mortality because of mechanical ture, salinity and...time. crabs seem less dependent on epibenthic cover and can be found over more exposed substrates. Most crabs Temperature- Salinity Interactions remain...13 Salinity . .. ....... ........................................ 14 Temperature- Salinity Interactions. .. .... ....... ....... 14

Ferromagnetic order in epitaxially strained LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Fuchs, D.; Pinta, C.; Schwarz, T.; Schweiss, P.; Nagel, P.; Schuppler, S.; Schneider, R.; Merz, M.; Roth, G.; v. Löhneysen, H.

2007-04-01

LaCoO3 films grown epitaxially on ⟨001⟩ oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates by pulsed laser deposition exhibit ferromagnetic ordering below a critical temperature, Tc , of 85K . Polycrystalline films of LaCoO3 prepared in the same way did not show ferromagnetic order down to T≈5K , and their temperature dependent susceptibility was identical to that of bulk LaCoO3 . The ferromagnetism in epitaxial films is not simply a property of the surface region, rather it extends over the complete film thickness, as shown by the linear increase of the saturated magnetic moment with increasing film thickness. We discuss this surprising result in terms of epitaxial tensile strain via the properly chosen substrate inducing ferromagnetic order.

The Effect of Carrier Properties on the Ballistic Processing of Sn-0.7 Cu Thick Films

NASA Astrophysics Data System (ADS)

Hille, David M.

The need for metallic films has increased since the creation of electronic components. The continued miniaturization of systems and components has led to a greater demand for both thick and thin films, especially in the technology field. Computers, hand held devices, and solar cells are a few of the multitudes of uses for these films. This thesis investigates a novel additive manufacturing process known as Ballistic Manufacturing (BM), invented at the Advanced Materials Processing Lab (AMPL) at San Diego State University. Lead free solder (Tin (Sn)-0.7%Copper (Cu)) was chosen as the testing material due to its low melting temperature. The effects of varying thermal conductivity via the change in carrier material type, the effect of raising substrate temperature, and surface finish differences were investigated. An increase in thermal conductivity resulted in an increase in film thickness and decrease in cell size. As substrate temperature was raised, film thickness decreased, while cell size decreased. Surface finish provided a proof of concept to the transfer of substrate features to the resultant film surface. Evaluation of dendritic microstructures led to relative cooling rates reflective of changes in parameters. The mechanical behavior was also investigated using tensile tests to determine stress-stain relationships and measure elastic modulus. With the current work of this thesis, and previous work by Cavero and Stewart, Ballistic Manufacturing is proven to be an alternative method in the production of metallic films.

Effect of annealing on Curie temperature and phase transition in La{sub 0.55}Sr{sub 0.08}Mn{sub 0.37}O{sub 3} epitaxial films grown on SrTiO{sub 3} (100) substrates by reactive radio frequency magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ichinose, T.

2016-08-15

Mn-poor LaSrMnO{sub 3} (LSMO) epitaxial films were grown on SrTiO{sub 3} (100) substrates by radio frequency magnetron sputtering in an argon and oxygen gas mix, and then the samples were annealed in air at various temperatures (T{sub a}). 2 theta-chi X-ray diffraction mapping, nano-beam diffraction analysis through transmission electron microscopy, and electron back scatter diffraction through scanning electron microscopy revealed that the crystal symmetry of the LSMO films changed from monoclinic/orthorhombic to rhombohedral on annealing in air. Curie temperature (T{sub C}) of the LSMO films was found to increase with increasing T{sub a}, and become higher than the room temperaturemore » at T{sub a} ≥ 861 °C, indicating that the cause of these changes was the filling of oxygen and the transition of the crystal symmetry into rhombohedral. - Highlights: •Mn-poor LSMO changed from monoclinic/orthorhombic to rhombohedral by oxygen supply. •Mn-poor LSMO was increased T{sub C} by changed crystal symmetry, and it showed T{sub C} above RT. •Annealed in air effectively supplied O{sub 2} more than O{sub 2} gas during sputtering •EBSD is useful to evaluate crystal symmetry of complex oxide film from the substrate.« less

The Effects of Substrate Material and Thermal Processing Atmosphere on the Strength of PS304: A High Temperature Solid Lubricant Coating

NASA Technical Reports Server (NTRS)

DellaCorte, Christopher

2002-01-01

PS304, a plasma spray deposited solid lubricant coating developed for high temperature sliding contacts was deposited on nine different substrate metals, heat treated at 650C in either air or argon and subsequently tested for strength using a commercially available pull-off adhesion test. Some samples were examined metallographically to help elucidate and explain the results. As deposited coatings exhibit pull-off strengths typically between 16 and 20 MPa with failure occuring (cohesively) within the coating. Heat treatment in argon at 650 C results in a slight increase in coating (cohesive) strength of about 30 percent to 21 to 27 MPa. Heat treatment in air at 650 C results in a dramatic increase in strength to over 30 MPa, exceeding the strength of the epoxy used in the pull test. Cross section metallographic analyses show that no microstructural coating changes occur following the argon heat treatments, however, exposure to air at 650C gives rise to the formation of a second chromium-rich phase precipitate within the PS304 NiCr constituent which provides a strengthening effect and a slight (approximately 5 percent) coating thickness increase. Subsequent heat treatments do not result in any further coating changes. Based upon these studies, PS304 is a suitable coating for use on a wide variety of high temperature substrates and must be heat treated following deposition to enhance strength and ensure dimensional stability.

Acidolysis and glyceride synthesis reactions using fatty acids with two Pseudomonas lipases having different substrate specificities.

PubMed

Kojima, Yuzo; Sakuradani, Eiji; Shimizu, Sakayu

2006-09-01

Enzymatic acidolysis and glyceride synthesis using polyunsaturated fatty acids (PUFAs) with lipases from Pseudomonas fluorescens HU380 (HU-lipase), P. fluorescens AK102 (AK-lipase), and Candida rugosa (CR-lipase) were studied. The acidolysis of triolein with eicosapentaenoic acid (EPA) or docosahexaenoic acid (DHA) in n-hexane was evaluated with lipases immobilized on Celite 545. HU-lipase showed the highest incorporation rate at a low temperature (10 degrees C) with either EPA or DHA as the acyl donor, and the rate decreased with increasing reaction temperature. At 45 degrees C, the rates for EPA and DHA were 7.1 and 0.5 relative to those at 10 degrees C, respectively. The EPA incorporation rate was even higher at a low temperature (10 degrees C), and the DHA incorporation rate increased with decreasing temperature. Although AK-lipase showed the reverse tendency for incorporation rate, the DHA incorporation rate increased with increasing reaction temperature with both PUFAs. HU-lipase reacted well with PUFAs such as DHA, EPA, arachidonic acid (AA), mead acid (MA), and dihomo-gamma-linolenic acid (DGLA) on acidolysis and glyceride synthesis. The reactivities of AK-lipase toward these PUFAs except for DGLA, i.e., MA, AA, EPA, and DHA, were low for both reactions. The unique substrate specificities of the lipases from the Pseudomonas strains will enable us to use these lipases for the modification of fats and oils containing PUFAs such as fish oil.

Initial substrate moisture content and storage temperature affects chemical properties of bagged substrates containing controlled release fertilizer at two different temperatures

USDA-ARS?s Scientific Manuscript database

Bagged potting mixes can be stored for weeks or months before being used by consumers. Some bagged potting mixes are amended with controlled release fertilizers (CRF). The objective of this research was to observe how initial substrate moisture content and storage temperature affect the chemical p...

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, M., E-mail: mohammad.haidar@Physics.gu.se; Ranjbar, M.; Balinsky, M.

The magnetodynamical properties of nanometer-thick yttrium iron garnet films are studied using ferromagnetic resonance as a function of temperature. The films were grown on gadolinium gallium garnet substrates by pulsed laser deposition. First, we found that the damping coefficient increases as the temperature increases for different film thicknesses. Second, we found two different dependencies of the damping on film thickness: at room temperature, the damping coefficient increases as the film thickness decreases, while at T = 8 K, we find the damping to depend only weakly on the thickness. We attribute this behavior to an enhancement of the relaxation of the magnetization bymore » impurities or defects at the surfaces.« less

Morphology of supercooled droplets freezing on solid surfaces

NASA Astrophysics Data System (ADS)

La, Shiren; Huang, Zhiting; Liu, Cong; Zhang, Xingyi

2018-05-01

Supercooled droplets freezing on solid surfaces are ubiquitous in nature. This letter investigates the influences of droplet viscosity on freezing velocity and frosting formation. Several experiments were conducted for three kinds of sessile droplets (water, silicone oil and oil) on two types of substrates (copper and iron) with different surface roughness at various temperatures. The results show that the water droplets exhibit obvious phase transition lines and their freezing speeds increase when the temperature of substrates decreases. It is found that the freezing speed is independent of the thermal conductivities of the substrates. Notably, the water droplets develop prominent bulges after freezing and subsequently nucleate to frost. In contrast, the high viscosity oil and silicone oil do not manifest an obvious phase transition line. Besides, no bulges are observed in these two kinds of droplets, suggesting that these frosting forms are of different mechanisms compared with water droplets.

Influence of graphene coating on the adsorption and tribology of Xe on Au(1 1 1) substrate.

PubMed

Zhang, Y N; Bortolani, V; Mistura, G

2014-11-05

The adsorption and tribological properties of graphene have received increasing attention for the further development of graphene-based coatings in applications. In this work, we performed first principles calculations with the inclusion of the nonlocal van der Waals correction to study the effect of graphene coating on the adsorption geometries, sliding frictions and electronic properties of Xe monolayer on the Au(1 1 1) substrate. The calculated activation energies indicate that Xe becomes movable on pure Au(1 1 1) surface at a temperature of around 30 K, whereas its motion can be activated only at a high temperature of ~50 K on graphene and on graphene-coated Au(1 1 1) substrates, in good agreement with recent experimental measurements by quartz crystal microbalance technique.

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

Rapid thermal process by RF heating of nano-graphene layer/silicon substrate structure: Heat explosion theory approach

NASA Astrophysics Data System (ADS)

Sinder, M.; Pelleg, J.; Meerovich, V.; Sokolovsky, V.

2018-03-01

RF heating kinetics of a nano-graphene layer/silicon substrate structure is analyzed theoretically as a function of the thickness and sheet resistance of the graphene layer, the dimensions and thermal parameters of the structure, as well as of cooling conditions and of the amplitude and frequency of the applied RF magnetic field. It is shown that two regimes of the heating can be realized. The first one is characterized by heating of the structure up to a finite temperature determined by equilibrium between the dissipated loss power caused by induced eddy-currents and the heat transfer to environment. The second regime corresponds to a fast unlimited temperature increase (heat explosion). The criterions of realization of these regimes are presented in the analytical form. Using the criterions and literature data, it is shown the possibility of the heat explosion regime for a graphene layer/silicon substrate structure at RF heating.

Finding pathways to prepare Fe4N thin films at low substrate temperature

NASA Astrophysics Data System (ADS)

Seema, Gupta, Nitiand Mukul

2018-04-01

In Fe-N phase diagram the formation of Fe4N thin films occur in a very narrow region, specially below 573 K. Above this, the range of homogeneity for formation of Fe4N start to increase yielding more favorable conditions for formation of single phase Fe4N. However, when deposited at high substrate temperature (Ts) typically above 650 K, nitrogen (N) tends to diffuse out of the system yielding a N deficient phase. In this work, we attempt to find pathways to deposit Fe4N thin films at low Ts and successfully prepared single phase Fe4N thin films at Ts as low as 423 K. This was achieved by utilizing an underlayer of CrN. We find that such underlayer not only has close lattice matching with Fe4N, it also acts as a diffusion barrier for the film-substrate interface.

The effect of different temperature profiles upon the length and crystallinity of vertically-aligned multi-walled carbon nanotubes.

PubMed

Yun, Jongju; Lee, Cheesung; Zheng, Qing; Baik, Seunghyun

2012-08-01

We synthesized vertically-aligned multi-walled carbon nanotubes with an inner diameter of 1.6-7.5 nm and stack height of 80-28600 microm by chemical vapor deposition. The effects of synthesis conditions such as substrate position in the tube furnace, maximum temperature, temperature increasing rate and synthesis duration on the structure of nanotubes were investigated. It was found that slightly faster temperature increase rate resulted in significantly longer length, larger diameter and more defects of nanotubes. Structural parameters such as inner, outer diameters, wall thickness and defects were investigated using transmission electron microscopy and Raman spectroscopy.

Understanding of the development of in-plane residual stress in sol-gel-derived metal oxide thin films

NASA Astrophysics Data System (ADS)

Ohno, Kentaro; Uchiyama, Hiroaki; Kozuka, Hiromitsu

2012-01-01

The in-plane residual stress in thin films greatly affects their properties and functionality as well as the substrate bending, and hence is an important factor to be controlled. In order to obtain general knowledge on the development of residual stress in sol-gel-derived oxide thin films, the in-plane residual stress was measured for yttria stabilized zirconia gel films on Si(100) wafers as a function of firing temperature by measuring the substrate curvature. The films showed a rather complex variation in residual stress, and the mechanism of the residual stress evolution was discussed, referencing the intrinsic stress and the x-ray diffraction data. At low annealing temperatures of 100-200 °C, the residual tensile stress decreased and became compressive partially due to the structural relaxation occurring during cooling. When the firing temperature was increased over 200 °C, the residual stress turned tensile, and increased with increasing annealing temperature, which was attributed to the increase in intrinsic stress due to film densification as well as to the reduced structural relaxation due to the progress of densification. The residual tensile stress slightly decreased at firing temperatures of 500-600 °C, which was attributed to the reduction in intrinsic stress due to thermally activated atomic diffusion as well as to emergence of thermal stress. At firing temperature over 600 °C, the residual tensile stress increased again, which was attributed to the increase in thermal stress generated during cooling due to the increased Young's modulus of the film. Although appearing to be complicated, the whole variation of residual stress with firing temperature could be understood in terms of film densification, structural relaxation, atomic diffusion, progress of crystallization and thermal strain. The illustration presented in the work may provide a clear insight on how the residual stress could be developed in a variety of functional sol-gel-derived, crystalline oxide thin films.

Equilibrium, chemical kinetic, and transport limitations to diamond growth

NASA Astrophysics Data System (ADS)

Evans, Edward Anthony

Because of their extreme properties, diamond films have found some industrial applications, i.e., heat sinks and tool coatings. However, to increase their economic attractiveness, the growth rate must be increased, the deposition temperature must be lowered, and single crystal films must be achieved. We have studied two types of chemical vapor deposition systems, hot-filament and microwave assisted, in order to understand the factors limiting diamond growth rate. From simultaneous microbalance growth rate measurements and mass spectrometer measurements, changes in growth rate are correlated with changes in gas phase composition. Measured reaction orders support the proposal that diamond growth occurs through a single-carbon-atom species, e.g., CHsb3. When a two-carbon atom source gas is used, it is likely that the dissociation to two, single-carbon atom species occurs on the substrate surface (dissociative adsorption). Furthermore, a shift to zero-order suggests that the diamond growth is a surface-site limited process at higher hydrocarbon concentrations. The diamond growth rate maximum with pressure is explained by transport limitations of species within the reaction zone. The reported diamond growth rates in the hot-filament reactor are several times higher than those reported by other research groups. These higher growth rates result from surrounding the substrate with the filament. We have used the measured growth rates, filament temperatures, and thermocouple measurements to calculate activation energies for diamond growth. When the filament temperature is used for the calculation, an activation energy of 73 kcal per mole is obtained; however, based on estimated substrate temperatures, an activation energy of 18 kcal per mole is determined. A dimensional analysis approach was developed to select the most important gas phase reactions occurring during diamond CVD. Steady-state analysis of these reactions and the application of mass transport equations lead to the conclusion that diamond growth, in current hot-filament and microwave assisted CVD processes, is occurring in a partial equilibrium environment in which diffusion of atomic hydrogen controls the overall diamond growth rate. The initial stages of diamond growth on non-diamond substrates correspond to carburization, nucleation and growth. When polycrystalline or single crystal diamond is used as a substrate, the carburization and nucleation stages are not observed and growth begins immediately. The nucleation rate depends sensitively on the radiative heat transfer to the substrate. Adding ozone to the hot-filament CVD charge increases the production of carbon monoxide and carbon dioxide; this increase is observed with or without the filament being activated. A consistent effect on the diamond growth rate was not observed when ozone was added to the hot-filament reactor.

Variation in respiratory substrates of co-occurring tree species with different geographical range limits

NASA Astrophysics Data System (ADS)

Angelica, P. E.; Griffin, K. L.

2016-12-01

The Hudson Valley Region of New York State, USA is known for a convergence of tree species within the eastern deciduous forest that are near the margin of their geographical range limits. This convergence of primarily southern ranged species with primarily northern ranged species provides the back drop to our study of respiratory activity of 16 forest tree species - 10 broadleaf and 6 coniferous. We found that broadleaved species at the southern edge of their range have significantly higher rates of respiration than trees that are in the center or northern edge of their range, which is contrasting to the lower respiration rates found in northern ranged conifers when compared to their central ranged counterparts . Using a simple closed system to estimate the Respiratory Quotient (RQ - CO2 uptake vs. O2 released) for 10 broadleaved species, we found that northern broadleaved species were more likely to be incorporating some proteins and/or fats as respiratory substrates (RQ<1), compared to central or southern species (RQ 1). All 16 species had similar temperature response of respiration, regardless of the species range or growth type (broadleaved vs. coniferous). In addition, broadleaved species showed an increasing RQ with increasing leaf temperature (from <1 at 15 °C to >1 at 35 °C) indicating the temperature dependence of respiratory substrates that transitions from proteins and fats to carbohydrates and eventually some organic acids as temperatures increase. Overall, this work suggests the fate of fixed carbon in an eastern deciduous forest is controlled by a variety of factors including genetic and environmental variables. As a result, the impact of climate change is likely to change the composition and biogeochemistry of this widespread forest biome.

Chemistry and long-term decomposition of roots of Douglas-fir grown under elevated atmospheric carbon dioxide and warming conditions.

PubMed

Chen, H; Rygiewicz, P T; Johnson, M G; Harmon, M E; Tian, H; Tang, J W

2008-01-01

Elevated atmospheric CO(2) concentrations and warming may affect the quality of litters of forest plants and their subsequent decomposition in ecosystems, thereby potentially affecting the global carbon cycle. However, few data on root tissues are available to test this feedback to the atmosphere. In this study, we used fine (diameter < or = 2 mm) and small (2-10 mm) roots of Douglas-fir (Pseudotsuga menziesii (Mirb.) Franco) seedlings that were grown for 4 yr in a 2 x 2 factorial experiment: ambient or elevated (+ 180 ppm) atmospheric CO(2) concentrations, and ambient or elevated (+3.8 degrees C) atmospheric temperature. Exposure to elevated CO(2) significantly increased water-soluble extractives concentration (%WSE), but had little effect on the concentration of N, cellulose, and lignin of roots. Elevated temperature had no effect on substrate quality except for increasing %WSE and decreasing the %lignin content of fine roots. No significant interaction was found between CO(2) and temperature treatments on substrate quality, except for %WSE of the fine roots. Short-term (< or = 9 mo) root decomposition in the field indicated that the roots from the ambient CO(2) and ambient temperature treatment had the slowest rate. However, over a longer period of incubation (9-36 mo) the influence of initial substrate quality on root decomposition diminished. Instead, the location of the field incubation sites exhibited significant control on decomposition. Roots at the warmer, low elevation site decomposed significantly faster than the ones at the cooler, high elevation site. This study indicates that short-term decomposition and long-term responses are not similar. It also suggests that increasing atmospheric CO(2) had little effect on the carbon storage of Douglas-fir old-growth forests of the Pacific Northwest.

Multivariate regulation of soil CO2 and N2 O pulse emissions from agricultural soils.

PubMed

Liang, Liyin L; Grantz, David A; Jenerette, G Darrel

2016-03-01

Climate and land-use models project increasing occurrence of high temperature and water deficit in both agricultural production systems and terrestrial ecosystems. Episodic soil wetting and subsequent drying may increase the occurrence and magnitude of pulsed biogeochemical activity, affecting carbon (C) and nitrogen (N) cycles and influencing greenhouse gas (GHG) emissions. In this study, we provide the first data to explore the responses of carbon dioxide (CO2 ) and nitrous oxide (N2 O) fluxes to (i) temperature, (ii) soil water content as percent water holding capacity (%WHC), (iii) substrate availability throughout, and (iv) multiple soil drying and rewetting (DW) events. Each of these factors and their interactions exerted effects on GHG emissions over a range of four (CO2 ) and six (N2 O) orders of magnitude. Maximal CO2 and N2 O fluxes were observed in environments combining intermediate %WHC, elevated temperature, and sufficient substrate availability. Amendments of C and N and their interactions significantly affected CO2 and N2 O fluxes and altered their temperature sensitivities (Q10 ) over successive DW cycles. C amendments significantly enhanced CO2 flux, reduced N2 O flux, and decreased the Q10 of both. N amendments had no effect on CO2 flux and increased N2 O flux, while significantly depressing the Q10 for CO2 , and having no effect on the Q10 for N2 O. The dynamics across DW cycles could be attributed to changes in soil microbial communities as the different responses to wetting events in specific group of microorganisms, to the altered substrate availabilities, or to both. The complex interactions among parameters influencing trace gas fluxes should be incorporated into next generation earth system models to improve estimation of GHG emissions. © 2015 John Wiley & Sons Ltd.

Deposition of tantalum carbide coatings on graphite by laser interactions

NASA Technical Reports Server (NTRS)

Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

1994-01-01

Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

Controllable synthesis and optical properties of novel ZnO cone arrays via vapor transport at low temperature.

PubMed

Han, Xinhai; Wang, Guanzhong; Jie, Jiansheng; Choy, Wallace C H; Luo, Yi; Yuk, T I; Hou, J G

2005-02-24

Novel ZnO cone arrays with controllable morphologies have been synthesized on silicon (100) substrates by thermal evaporation of metal Zn powder at a low temperature of 570 degrees C without a metal catalyst. Clear structure evolutions were observed using scanning electron microscopy: well-aligned ZnO nanocones, double-cones with growing head cones attached by stem cones, and cones with straight hexagonal pillar were obtained as the distance between the source and the substrates was increased. X-ray diffraction shows that all cone arrays grow along the c-axis. Raman and photoluminescence spectra reveal that the optical properties of the buffer layer between the ZnO cone arrays and the silicon substrates are better than those of the ZnO cone arrays due to high concentration of Zn in the heads of the ZnO cone arrays and higher growth temperature of the buffer layer. The growth of ZnO arrays reveals that the cone arrays are synthesized through a self-catalyzed vapor-liquid-solid (VLS) process.

Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

NASA Astrophysics Data System (ADS)

Vajente, G.; Birney, R.; Ananyeva, A.; Angelova, S.; Asselin, R.; Baloukas, B.; Bassiri, R.; Billingsley, G.; Fejer, M. M.; Gibson, D.; Godbout, L. J.; Gustafson, E.; Heptonstall, A.; Hough, J.; MacFoy, S.; Markosyan, A.; Martin, I. W.; Martinu, L.; Murray, P. G.; Penn, S.; Roorda, S.; Rowan, S.; Schiettekatte, F.; Shink, R.; Torrie, C.; Vine, D.; Reid, S.; Adhikari, R. X.

2018-04-01

Brownian thermal noise in dielectric multilayer coatings limits the sensitivity of current and future interferometric gravitational wave detectors. In this work we explore the possibility of improving the mechanical losses of tantala, often used as the high refractive index material, by depositing it on a substrate held at elevated temperature. Promising results have been previously obtained with this technique when applied to amorphous silicon. We show that depositing tantala on a hot substrate reduced the mechanical losses of the as-deposited coating, but subsequent thermal treatments had a larger impact, as they reduced the losses to levels previously reported in the literature. We also show that the reduction in mechanical loss correlates with increased medium range order in the atomic structure of the coatings using x-ray diffraction and Raman spectroscopy. Finally, a discussion is included on our results, which shows that the elevated temperature deposition of pure tantala coatings does not appear to reduce mechanical loss in a similar way to that reported in the literature for amorphous silicon; and we suggest possible future research directions.

Room temperature deposition of sputtered TiN films for superconducting coplanar waveguide resonators

NASA Astrophysics Data System (ADS)

Ohya, S.; Chiaro, B.; Megrant, A.; Neill, C.; Barends, R.; Chen, Y.; Kelly, J.; Low, D.; Mutus, J.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T. C.; Yin, Y.; Schultz, B. D.; Palmstrøm, C. J.; Mazin, B. A.; Cleland, A. N.; Martinis, John M.

2014-01-01

We present a systematic study of the properties of room temperature deposited TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the deposition pressure from 2 to 9 mTorr while keeping a nearly stoichiometric composition of Ti1-xNx (x = 0.5) without substrate heating, the film resistivity increases, the dominant crystal orientation changes from (100) to (111), grain boundaries become clearer, and the strong compressive in-plane strain changes to weak tensile in-plane strain. The TiN films absorb a high concentration of contaminants including hydrogen, carbon, and oxygen when they are exposed to air after deposition. With the target-substrate distance set to 88 mm the contaminant levels increase from ˜0.1% to ˜10% as the pressure is increased from 2 to 9 mTorr. The contaminant concentrations also correlate with in-plane distance from the center of the substrate and increase by roughly two orders of magnitude as the target-substrate distance is increased from 88 to 266 mm. These contaminants are found to strongly influence the properties of TiN thin films. For instance, the resistivity of stoichiometric films increases by around a factor of 5 as the oxygen content increases from 0.1% to 11%. These results strongly suggest that the energy of the sputtered TiN particles plays a crucial role in determining the TiN film properties, and that it is important to precisely control the energy of these particles to obtain high-quality TiN films. Superconducting coplanar waveguide resonators made from a series of nearly stoichiometric films grown at pressures from 2 to 7 mTorr show a substantial increase in intrinsic quality factor from ˜104 to ˜106 as the magnitude of the compressive strain decreases from nearly 3800 MPa to approximately 150 MPa and the oxygen content increases from 0.1% to 8%. Surprisingly, the films with a higher oxygen content exhibit lower loss, but care must be taken when depositing at room temperature to avoid nonuniform oxygen incorporation, which presents as a radially dependent resistivity and becomes a radially dependent surface inductance in the superconductor.

Microstructural studies by TEM of diamond films grown by combustion flame

NASA Astrophysics Data System (ADS)

Ma, G.-H. M.; Hirose, Y.; Amanuma, S.; McClure, M.; Prater, J. T.; Glass, J. T.

Microstructures of diamond films grown in an oxygen-acetylene combustion flame were studied by TEM. The O2/C2H2 gas ratio was fixed and the substrate materials and temperature were varied. High quality diamond films were grown by this method at high growth rates of about 30 micron/hr. A rough surface and high density of secondary nucleation sites and microtwins were observed in the diamond grains grown on molybdenum (Mo) at a substrate temperature of 500 C. When the substrate temperature wass raised to between 500 and 870 C, the defect density was greatly reduced, revealing a low density of stacking faults and dislocations. Diamond films grown on Si substrates did not show the same substrate temperature dependence on defect density, at least not over the same temperature range. However, the same correlation between defect density, secondary nucleation, and surface morphology was observed.

Preparation and Characterization of RF Sputtered BARIUM(2) SILICON(2) Titanium OXYGEN(8) Thin Films

NASA Astrophysics Data System (ADS)

Li, Yi.

Thin films of barium titanium silicate ( Ba_2Si_2TiO_8) are grown on crystalline (100) Si at substrate temperatures raging from 750 to 955^circC by the radio-frequency triode sputtering technique. The chemical composition, microstructure, physical properties, and growth conditions of the deposited films are investigated by dc and high-frequency dielectric measurements, wavelength dispersive and energy dispersive x-ray spectrometries, x-ray diffraction spectrometry, and optical and scanning electron microscopies. The results of the x-ray diffraction analysis show that the Ba_2Si_2TiO _8 films deposited at the optimum condition of substrate temperature of 845^circ C, 4 cm source-substance distance, 50 W rf power, and 1.2 times 10^ {-3} torr pressure of Ar, are highly c -axis oriented. The as-deposited films are smooth, glossy, polycrystalline films, exhibiting a bulk resistivity range of 10^6 Omegacdotcm, and an isotropic surface resistivity of 1.5 times 10^3 Omegacdot cm. The relative dielectric constant is 0.05, and the dielectric loss is lower than 1.0, in the frequency band 9 ~ 1000 MHz. The high-frequency impedance of BST films, which is typical for piezoelectric materials, gives a minimum impedance frequency of 9.0 MHz and a series resonant frequency of 9.5 MHz. Optical and SEM observations show that the film texture is dependent on the substrate conditions. The non-liquid-like grain coalescence of the Ba_2Si_2TiO _8 grains is characteristic of a strong film -substrate interaction. The grain growth kinetics obtained from "short-time" sputtering gives an initial lateral grain growth rate of 770 nm/min at 845^circ C, which decreases with the grain size. The initial film growth rate in the direction of thickness, measured from SEM micrographs, is 1.95 nm/min, and decreases with sputtering time. The activation free energy for grain growth is 359 +/- 30 KJ/mol for the initial stage, decreasing to 148 +/- 20 KJ/mol for the final stage. The variation of the grain growth rate and the activation energy with grain size is the result of a combined nucleation and growth mechanism in the initial stage of the film growth, and a coalescence -dominated growth mechanism at longer sputtering time and at higher temperature. Film orientation is sensitive to the supersaturation adjacent to the film surface, which depends on the source-substrate distance and substrate temperature. The effect of the substrate temperature on the orientation of the film is investigated over a wide temperature range using (100) and (111) Si substrates. Several orientations for the BST films, including an amorphous state, are obtained with increasing substrate temperature. This is discussed in relation to the atomic plane density and the energetics for the deposition process.

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

PubMed Central

Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng

2016-01-01

Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L) and injection current density (J) with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures. PMID:28773923

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate.

PubMed

Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng

2016-09-27

Direct band electroluminescence (EL) from tensile-strained Si 0.13 Ge 0.87 /Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300-1400 nm and 1600-1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL ( L ) and injection current density ( J ) with L ~ J m shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures.

Nutrient conservation during spent mushroom compost application using spent mushroom substrate derived biochar.

PubMed

Lou, Zimo; Sun, Yue; Bian, Shuping; Ali Baig, Shams; Hu, Baolan; Xu, Xinhua

2017-02-01

Spent mushroom compost (SMC), a spent mushroom substrate (SMS) derived compost, is always applied to agriculture land to enhance soil organic matter and nutrient contents. However, nitrogen, phosphate and organic matter contained in SMC can leach out and contaminate ground water during its application. In this study, biochars prepared under different pyrolytic temperatures (550 °C, 650 °C or 750 °C) from SMS were applied to soil as a nutrient conservation strategy. The resultant biochars were characterized for physical and mineralogical properties. Surface area and pore volume of biochars increased as temperature increased, while pore size decreased with increasing temperature. Calcite and quartz were evidenced by X-ray diffraction analysis in all biochars produced. Results of column leaching test suggested that mixed treatment of SMC and SMS-750-800 (prepared with the temperature for pyrolysis and activation was chosen as 750 °C and 800 °C, respectively) could reduce 43% of TN and 66% of COD Cr in leachate as compared to chemical fertilizers and SMC, respectively. Furthermore, increasing dosage of SMS-750-800 from 1% to 5% would lead to 54% COD Cr reduction in leachate, which confirmed its nutrient retention capability. Findings from this study suggested that combined application of SMC and SMS-based biochar was an applicable strategy for reducing TN and COD Cr leaching. Copyright © 2016 Elsevier Ltd. All rights reserved.

Thermal Processing Effects on the Adhesive Strength of PS304 High Temperature Solid Lubricant Coatings

NASA Technical Reports Server (NTRS)

DellaCorte, Christopher; Edmonds, Brian J.; Benoy, Patricia A.

2001-01-01

In this paper the effects of post deposition heat treatments on the cohesive and adhesive strength properties of PS304, a plasma sprayed nickel-chrome based, high temperature solid lubricant coating deposited on stainless steel, are studied. Plasma spray deposited coating samples were exposed in air at temperatures from 432 to 650 C for up to 500 hr to promote residual stress relief, enhance particle to particle bonding and increase coating to substrate bond strength. Coating pull-off strength was measured using a commercial adhesion tester that utilizes 13 mm diameter aluminum pull studs attached to the coating surface with epoxy. Pull off force was automatically recorded and converted to coating pull off strength. As deposited coating samples were also tested as a baseline. The as-deposited (untreated) samples either delaminated at the coating-substrate interface or failed internally (cohesive failure) at about 17 MPa. Samples heat treated at temperatures above 540 C for 100 hr or at 600 C or above for more than 24 hr exhibited strengths above 31 MPa, nearly a two fold increase. Coating failure occurred inside the body of the coating (cohesive failure) for nearly all of the heat-treated samples and only occasionally at the coating substrate interface (adhesive failure). Metallographic analyses of heat-treated coatings indicate that the Nickel-Chromium binder in the PS304 appears to have segregated into two phases, a high nickel matrix phase and a high chromium precipitated phase. Analysis of the precipitates indicates the presence of silicon, a constituent of a flow enhancing additive in the commercial NiCr powder. The exact nature and structure of the precipitate phase is not known. This microstructural change is believed to be partially responsible for the coating strength increase. Diffusion bonding between particles may also be playing a role. Increasing the heat treatment temperature, exposure time or both accelerate the heat treatment process. Preliminary measurements indicate that the heat treatment also results in a one time, permanent coating thickness increase of about 3%. Based upon these results, the incorporation of a heat treatment prior to final finishing has been incorporated in the application process of this coating technology.

Characteristics of Coplanar Waveguide on Sapphire for High Temperature Applications (25 to 400 degrees C)

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian; Stalker, Amy R.

2007-01-01

This paper presents the characteristics of coplanar waveguide transmission lines fabricated on R-plane sapphire substrates as a function of temperature across the temperature range of 25 to 400 C. Effective permittivity and attenuation are measured on a high temperature probe station. Two techniques are used to obtain the transmission line characteristics, a Thru-Reflect-Line calibration technique that yields the propagation coefficient and resonant stubs. To a first order fit of the data, the effective permittivity and the attenuation increase linearly with temperature.

The thickness effect of pre-deposited catalyst film on carbon nanotube growth by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Lowndes, Douglas H.

2001-03-01

Chemical vapor deposition (CVD) of multi wall carbon nanotubes (MWCNTs) was realized on a substrate with a layer of iron film used as a catalyst. The catalyst film was pre-deposited in an electron-gun evaporator equipped with a movable shutter which partially blocks the beam during the evaporation process to produce a catalyst film with a continuously changing thickness from 0 to 60 nm. This technique creates a growth environment in which the film thickness is the only variable and eliminates sample-to-sample variations, enabling a systematic study of the thickness effect of the catalyst film on CNT growth. After the deposition of the catalyst film, the sample was immediately transferred into a CVD chamber where CNT growth was performed. Using Acetylene (C_2H_2) as a carbon-source gas, at the substrate temperature of around 700^oC, MWCNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature from 640^oC to 800^oC. There appears to be no strong correlation between the film thickness and the diameter of the tubes. At the substrate temperature of over 900^oC, the deposited carbon formed graphite sheets surrounding the catalyst particles and no CNTs were observed. A plot of the critical thickness of the catalyst film where CNTs start to grow as a function of the substrate temperature has obtained, which can be served as a reference for selecting the growth parameter in MWCNT growth. The significance of these experimental trends is discussed within the framework of the diffusion model for MWCNT growth.

Calcium-ion transport by intact Ehrlich ascites-tumour cells. Role of respiratory substrates, Pi and temperature.

PubMed

Charlton, R R; Wenner, C E

1978-03-15

1. The interaction of intact Ehrlich ascites-tumour cells with Ca2+ at 37 degrees C consists of Ca2+ uptake followed by efflux from the cells. Under optimum conditions, two or three cycles of uptake and efflux are observed in the first 15 min after Ca2+ addition. 2. The respiratory substrates malate, succinate and ascorbate plus p-phenylenediamine support Ca2+ uptake. Ca2+ uptake at 37 degrees C is sensitive to the respiratory inhibitors rotenone and antimycin A when appropriate substrates are present. Ca2+ uptake and retention are inhibited by the uncoupler S-13. 3. Increasing extracellular Pi (12 to 30 mM) stimulates uncoupler-sensitive Ca2+ uptake, which reaches a maximum extent of 15 nmol/mg of protein when supported by succinate respiration. Ca2+ efflux is partially inhibited at 30 mM-Pi. 4. Optimum Ca2+ uptake occurs in the presence of succinate and Pi, suggesting that availability of substrate and Pi are rate-limiting. K. Ca2+ uptake occurs at 4 degrees C and is sensitive to uncouplers and oligomycin. Ca2+ efflux at this temperature is minimal. These data are consistent with a model in which passive diffusion of Ca2+ through the plasma membrane is followed by active uptake by the mitochondria. Ca2+ uptake is supported by substrates entering respiration at all three energy-coupling sites. Ca2+ efflux appears to be an active process with a high temperature coefficient.

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

NASA Astrophysics Data System (ADS)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-05-01

Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

As-Deposited (La1-xSrx)(Ga1-y-zMgyCoz)O3-(x+y+z)/2 Crystallized Thin Films Prepared by Pulsed Laser Deposition for Application to Solid Oxide Fuel Cell Electrolyte

NASA Astrophysics Data System (ADS)

Mitsugi, Fumiaki; Kanazawa, Seiji; Ohkubo, Toshikazu; Nomoto, Yukiharu; Ishihara, Tatsumi; Takita, Yusaku

2004-01-01

Doped lanthanum gallate (La1-xSrx)(Ga1-y-zMgyCoz)O3-(x+y+z)/2 (LSGMCO) perovskite oxide films were deposited on a quartz glass, LaAlO3 single-crystal substrate and porous anode electrode of a solid oxide fuel cell (SOFC) by pulsed laser deposition. It was necessary to increase the substrate temperature up to 800°C for a crystallization of the LSGMCO films. The film deposited on the LaAlO3 single-crystal substrate grew along the c-axis. The as-deposited LSGMCO thick film fabricated on the porous substrate at 800°C and at an oxygen pressure of 20Pa was formed from polycrystal columns and showed a high conductivity of 0.7S/cm at a measurement temperature of 800°C. The activation energies were 0.72 eV at 600-800°C and 1.05 eV at 400-600°C.

Fabrication and deformation behaviour of multilayer Al2O3/Ti/TiO2 nanotube arrays.

PubMed

Baradaran, S; Basirun, W J; Zalnezhad, E; Hamdi, M; Sarhan, Ahmed A D; Alias, Y

2013-04-01

In this study, titanium thin films were deposited on alumina substrates by radio frequency (RF) magnetron sputtering. The mechanical properties of the Ti coatings were evaluated in terms of adhesion strength at various RF powers, temperatures, and substrate bias voltages. The coating conditions of 400W of RF power, 250°C, and a 75V substrate bias voltage produced the strongest coating adhesion, as obtained by the Taguchi optimisation method. TiO2 nanotube arrays were grown as a second layer on the Ti substrates using electrochemical anodisation at a constant potential of 20V and anodisation times of 15min, 45min, and 75min in a NH4F electrolyte solution (75 ethylene glycol: 25 water). The anodised titanium was annealed at 450°C and 650°C in a N2 gas furnace to obtain different phases of titania, anatase and rutile, respectively. The mechanical properties of the anodised layer were investigated by nanoindentation. The results indicate that Young's modulus and hardness increased with annealing temperature to 650°C. Copyright © 2013 Elsevier Ltd. All rights reserved.

Optical Characterization of Lead Monoxide Films Grown by Laser-Assisted Deposition

NASA Astrophysics Data System (ADS)

Baleva, M.; Tuncheva, V.

1994-05-01

The Raman spectra of PbO films, grown by laser-assisted deposition (LAD) at different substrate temperatures are investigated. The spectra of the films, deposited on amorphous, single crystal quartz and polycrystal PbTe substrates, are compared with the Raman spectra of tetragonal and orthorhombic powder samples. The phonon frequencies determined in our experiment with powder samples coincide fairly well with those obtained by Adams and Stevens, J. Chem. Soc., Dalton Trans., 1096 (1977). Thus the Raman spectra of the powder samples presented in this paper can be considered as unambiguous characteristics of the two different PbO crystal phases. It was concluded that the Raman scattering may serve as a tool for identification of PbO films and their crystal modifications. On the basis of this investigation it was concluded that the film structure changes from orthorhombic to tetragonal with increased substrate temperature, and that the nature of the substrate influences the crystal structure of the films. On the basis of the Raman spectra of the β-PbO films with prevailing (001) orientation of crystallization, an assignment of the modes is proposed.

Silicanizing Process On Mild Steel Substrate by Using Tronoh Silica Sand: Microstructure, composition and coating growth

NASA Astrophysics Data System (ADS)

Y, Yusnenti F. M.; M, Othman; Mustapha, Mazli; I, MohdYusri

2016-02-01

A new Silicanizing process on formation of coating on mild steel using Tronoh Silica Sand (TSS) is presented. The process was performed in the temperature range 1000- 1100°C and with varying deposition time of 1-4 hours. Influence of the layer and the substrate constituents on the coating compatibility of the whole silicanized layer is described in detail. Morphology and structure of the silicanized layer were investigated by XRF, XRD and SEM. It is observed that diffusion coatings containing high concentrations of silica which profile distribution of SiO2 in the silicanized layer was encountered and the depth from the surface to the substrate was taken as the layer thickness. The results also depicted that a longer deposition time have tendency to produce a looser and larger grain a hence rougher layer. The silicanized layer composed of FeSi and Fe2SiO4 phases with preferred orientation within the experimental range. It is also found that longer deposition time and higher temperature resulted in an increase in SiO2 concentration on the substrate (mild steel).

Evolution of organic matter during composting of different organic wastes assessed by CPMAS {sup 13}C NMR spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caricasole, P.; Provenzano, M.R., E-mail: Provenza@agr.uniba.it; Hatcher, P.G.

2011-03-15

In this paper, the evolution of organic matter (OM) during composting of different mixtures of various organic wastes was assessed by means of chemical analyses and CPMAS {sup 13}C NMR spectroscopy measured during composting. The trends of temperatures and C/N ratios supported the correct evolution of the processes. The CPMAS {sup 13}C NMR spectra of all composting substrates indicated a reduction in carbohydrates and an increase in aromatic, phenolic, carboxylic and carbonylic C which suggested a preference by microorganisms for easily degradable C molecules. The presence of hardly degradable pine needles in one of the substrates accounted for the lowestmore » increase in alkyl C and the lowest reduction in carbohydrates and carboxyl C as opposite to another substrate characterized by the presence of a highly degradable material such as spent yeast from beer production, which showed the highest increase of the alkyl C/O-alkyl C ratio. The highest increase of COOH deriving by the oxidative degradation of cellulose was shown by a substrate composed by about 50% of plant residues. The smallest increases in alkyl C/O-alkyl C ratio and in polysaccharides were associated to the degradation of proteins and lipids which are major components of sewage sludge. Results obtained were related to the different composition of fresh organic substrates and provided evidence of different OM evolution patterns as a function of the initial substrate composition.« less

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

1994-01-01

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

1994-09-13

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

Preliminary investigation of single chamber single electrode microbial fuel cell using sewage sludge as a substrate

NASA Astrophysics Data System (ADS)

Sai Chaithanya, M.; Thakur, Somil; Sonu, Kumar; Das, Bhaskar

2017-11-01

A microbial fuel cell (MFC) consists of a cathode and anode; micro-organisms transfer electrons acquired from the degradation of organic matter in the substrate to anode; and thereby to cathode; by using an external circuit to generate electricity. In the present study, a single chamber single electrode microbial fuel cell has been fabricated to generate electricity from the sludge of the sewage treatment plant at two different ambient temperature range of 25 ± 4°C and 32 ± 4°C under aerobic condition. No work has been done yet by using the single electrode in any MFC system; it is hypothesized that single electrode submerged partially in substrate and rest to atmosphere can function as both cathode and anode. The maximum voltage obtained was about 2890 mV after 80 (hrs) at temperature range of 25 ± 4°C, with surface power density of 1108.29 mW/m2. When the ambient temperature was 32 ± 4°C, maximum voltage obtained was 1652 mV after 40 (hrs.) surface power density reduced to 865.57 mW/m2. When amount of substrate was decreased for certain area of electrode at 25 ± 4°C range, electricity generation decreased and it also shortened the time to reach peak voltage. On the other hand, when the ambient temperature was increased to 32 ± 4°C, the maximum potential energy generated was less than that of previous experiment at 25 ± 4°C for the same substrate Also the time to reach peak voltage decreased to 40 hrs. When comparing with other single chamber single electrode MFC, the present model is generating more electricity that any MFC using sewage sludge as substrate except platinum electrode, which is much costlier that electrode used in the present study.

Variation of optical properties of gel-derived VO2 thin films with temperature

NASA Astrophysics Data System (ADS)

Hou, Lisong; Lu, Song W.; Gan, Fuxi

1991-11-01

VO2 thin films are prepared on three kinds of substrates by the sol-gel dip-coating method followed by heat treatment under vacuum conditions. The IR and UV-visible spectra of the films are studied during heating and cooling between room temperature and 100 degree(s)C. The experimental results show that the films exhibit thermally-induced reversible phase transition and, as a result, the maximum changes in transmittance and reflectivity are 58% and 25%, respectively, in the case of vacuum heat treatment at 400 degree(s)C and silica glass substrates. The refractive index n decreases and the extinction coefficient k increases when heating these films from room temperature to 100 degree(s)C, and vice versa. The reasons why the optical constants and IR absorption spectra change so remarkably are discussed.

Crystalline ha coating on peek via chemical deposition

NASA Astrophysics Data System (ADS)

Almasi, D.; Izman, S.; Assadian, M.; Ghanbari, M.; Abdul Kadir, M. R.

2014-09-01

Polyether ether ketone (PEEK) has a similar elastic modulus to bone and can be a suitable alternative to metallic implants. However, PEEK is bioinert and does not integrate well with the surrounding tissues. The current commercial method for solving this problem is by coating PEEK substrates with calcium phosphates via plasma spraying. However, this method produces a low bonding strength between the substrate and the coating layer, as well as non-uniform density of the coating. In this study, chemical deposition was used to deposit HA crystalline particles on PEEK substrate without any subsequent crystallisation process therefore producing crystalline treated layer. EDX results confirmed the deposition of HA, and the XRD results confirmed that the treated layer was crystalline HA. FT-IR analysis confirmed the chemical bonding between HA and the substrate. Surface roughness increased from 24.27 nm to 34.08 nm for 3 min immersion time. The water contact angle showed an increase in wettability of the treated sample from 71.6 to 36.4 degrees, which in turn increased its bioactivity. The proposed method is a suitable alternative to other conventional methods as high temperature was not involved in the process which could damage the surface of the substrate.

Laser ablation of sub-10 nm silver nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinovev, Alexander; Moore, Jerome F.; Baryshev, Sergey V.

Laser ablation of silver nanoparticles (NPs) was studied with laser post-ionization (LPI) time-of-flight mass spectrometry (TOF MS). Silver NPs containing ~15 000 Ag atoms (4 nm radius) were deposited by soft landing (energy 3 eV/atom) onto indium tin oxide (ITO)/glass substrates. Laser ablation was performed using frequency-doubled Ti:sapphire nanosecond pulsed laser irradiation at three different wavelengths (371, 401, and 421 nm), whereas for post-ionization, pulses from an F 2 laser were used. Laser fluences and time delay dependencies of Ag and In signals were obtained. Using these data, the temperature of the desorption source as well as its time durationmore » were calculated. It was found that the peak temperature of NPs was above their melting point and they cooled down slowly, with temperature decay time of several hundreds of nanoseconds. This anomalous behavior was explained based on a model where the semiconducting ITO substrate is initially transparent to the desorption laser radiation but starts to adsorb it due to the temperature increase arising from heat exchange with NPs. Poor heat conduction in the ITO film creates conditions for long-lived hot spots on the surface and initiates further optical damage of the substrate. No difference in the ablation process due to plasmon resonance was detected, likely due to thermal expansion and melting of NPs during laser irradiation, which then broadens the plasmon absorption band enough to cover all wavelengths used. Here, these results clearly demonstrate that the process of NP interaction with laser radiation is governed not only by initial optical and thermophysical parameters of NPs and the surrounding media, but also by their alteration due to temperature increases during the irradiation process.« less

Laser ablation of sub-10 nm silver nanoparticles

DOE PAGES

Zinovev, Alexander; Moore, Jerome F.; Baryshev, Sergey V.; ...

2017-04-13

Laser ablation of silver nanoparticles (NPs) was studied with laser post-ionization (LPI) time-of-flight mass spectrometry (TOF MS). Silver NPs containing ~15 000 Ag atoms (4 nm radius) were deposited by soft landing (energy 3 eV/atom) onto indium tin oxide (ITO)/glass substrates. Laser ablation was performed using frequency-doubled Ti:sapphire nanosecond pulsed laser irradiation at three different wavelengths (371, 401, and 421 nm), whereas for post-ionization, pulses from an F 2 laser were used. Laser fluences and time delay dependencies of Ag and In signals were obtained. Using these data, the temperature of the desorption source as well as its time durationmore » were calculated. It was found that the peak temperature of NPs was above their melting point and they cooled down slowly, with temperature decay time of several hundreds of nanoseconds. This anomalous behavior was explained based on a model where the semiconducting ITO substrate is initially transparent to the desorption laser radiation but starts to adsorb it due to the temperature increase arising from heat exchange with NPs. Poor heat conduction in the ITO film creates conditions for long-lived hot spots on the surface and initiates further optical damage of the substrate. No difference in the ablation process due to plasmon resonance was detected, likely due to thermal expansion and melting of NPs during laser irradiation, which then broadens the plasmon absorption band enough to cover all wavelengths used. Here, these results clearly demonstrate that the process of NP interaction with laser radiation is governed not only by initial optical and thermophysical parameters of NPs and the surrounding media, but also by their alteration due to temperature increases during the irradiation process.« less

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

PubMed

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process.

PubMed

Vishwas, M; Narasimha Rao, K; Arjuna Gowda, K V; Chakradhar, R P S

2010-09-15

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. Copyright 2010 Elsevier B.V. All rights reserved.

Mechanical Properties of Stable Glasses Using Nanoindentation

NASA Astrophysics Data System (ADS)

Wolf, Sarah; Liu, Tianyi; Jiang, Yijie; Ablajan, Keyume; Zhang, Yue; Walsh, Patrick; Turner, Kevin; Fakhraai, Zahra

Glasses with enhanced stability over ordinary, liquid quenched glasses have been formed via the process of Physical Vapor Deposition (PVD) by using a sufficiently slow deposition rate and a substrate temperature slightly below the glass transition temperature. These stable glasses have been shown to exhibit higher density, lower enthalpy, and better kinetic stability over ordinary glass, and are typically optically birefringent, due to packing and orientational anisotropy. Given these exceptional properties, it is of interest to further investigate how the properties of stable glasses compare to those of ordinary glass. In particular, the mechanical properties of stable glasses remain relatively under-investigated. While the speed of sound and elastic moduli have been shown to increase with increased stability, little is known about their hardness and fracture toughness compared to ordinary glasses. In this study, glasses of 9-(3,5-di(naphthalen-1-yl)phenyl)anthracene were deposited at varying temperatures relative to their glass transition temperature, and their mechanical properties measured by nanoindentation. Hardness and elastic modulus of the glasses were compared across substrate temperatures. After indentation, the topography of these films were studied using Atomic Force Microscopy (AFM) in order to further compare the relationship between thermodynamic and kinetic stability and mechanical failure. Z.F. and P.W. acknowledge funding from NSF(DMREF-1628407).

Structural, morphological and optical properties of LiCo0.5Ni0.45Ag0.05O2 thin films

NASA Astrophysics Data System (ADS)

Haider, Adawiya J.; AL-Rsool, Rusul Abed; AL-Tabbakh, Ahmed A.; Al-Gebori, Abdul Nasser M.; Mohamed, Aliaa

2018-05-01

Pulsed Laser Deposition (PLD) method has been successfully used for the synthesized of nano-crystalline cathode m aterial LiCo0.5Ni0.45Ag0.05O2 (LCNAO) thin film. LCNAO Ferromagnetic using pulsed Nd-YAG laser with wavelength (λ = 532 nm) and duration (10 ns) and energy fluence (1.4 J/cm2) with different substrate temperature (100, 200, 300) ˚C and O2 pressure at 10 mbar. The structural, morphological and optical properties of the films were determined by X-ray Diffraction (XRD), Scan Electron Microscopy (SEM), Atomic Force microscope (AFM) and UV-VIS spectroscopy respectively. It is observed that partial layer to spinel transformation takes place during post annealing and the average particle size of the LiCo0.5Ni0.45Ag0.05O2 is found to be (1-12) nm from SEM measurement. Finally the optical properties of the thin films have been studied at different Substrate temperature. It found the energy gap decreases from 4.2 to 3.8 eV when the substrate's temperature increasing from 100° C into 300 °C of the LCNAO films. These mean that the optical quality of LCNAO films is improved due to the increase in crystalline size and reduction of defect sites.

Influence of the chemical potential on the Casimir-Polder interaction between an atom and gapped graphene or a graphene-coated substrate

NASA Astrophysics Data System (ADS)

Henkel, C.; Klimchitskaya, G. L.; Mostepanenko, V. M.

2018-03-01

We present a formalism based on first principles of quantum electrodynamics at nonzero temperature which permits us to calculate the Casimir-Polder interaction between an atom and a graphene sheet with arbitrary mass gap and chemical potential, including graphene-coated substrates. The free energy and force of the Casimir-Polder interaction are expressed via the polarization tensor of graphene in (2 +1 ) -dimensional space-time in the framework of the Dirac model. The obtained expressions are used to investigate the influence of the chemical potential of graphene on the Casimir-Polder interaction. Computations are performed for an atom of metastable helium interacting with either a freestanding graphene sheet or a graphene-coated substrate made of amorphous silica. It is shown that the impacts of the nonzero chemical potential and the mass gap on the Casimir-Polder interaction are in opposite directions, by increasing and decreasing the magnitudes of the free energy and force, respectively. It turns out, however, that the temperature-dependent part of the Casimir-Polder interaction is decreased by a nonzero chemical potential, whereas the mass gap increases it compared to the case of undoped, gapless graphene. The physical explanation for these effects is provided. Numerical computations of the Casimir-Polder interaction are performed at various temperatures and atom-graphene separations.

Superconducting thin films of Bi-Sr-Ca-Cu-O by laser ablation

NASA Astrophysics Data System (ADS)

Bedekar, M. M.; Safari, A.; Wilber, W.

1992-11-01

Superconducting thin films of Bi-Sr-Ca-Cu-O have been deposited by KrF excimer laser ablation. The best in situ films showed a Tc onset of 110 K and a Tc(0) of 76 K. A study of the laser plume revealed the presence of two distinct regimes. The forward directed component increased with fluence and the film composition was stoichiometric in this region. This is in agreement with the results on the 123 system by Venkatesan et al. [1]. The film properties were found to be critically dependent on the substrate temperature and temperatures close to melting gave rise to 2212 and 2223 phases. At lower temperatures, 2201 and amorphous phases were obtained. The film morphology and superconducting properties were a function of the target to substrate distance and the oxygen pressure during deposition and cooling. An increase in the target to substrate distance led to a deterioration of the properties due to the energy consideration for the formation of 2212 and 2223 phases. The best films were obtained using cooling pressures of 700 Torr. The microwave surface resistance of the films measured at 35 GHz dropped below that of copper at 30 K. Film growth was studied using X-ray diffraction and STM/AFM. This work is a discussion of the role of the different variables on the film properties.

Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

NASA Astrophysics Data System (ADS)

Wong, Justin Wai-Chow

1987-09-01

Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-05-01

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopymore » with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-01-01

Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopymore » mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Tellurium nano-structure based NO gas sensor.

PubMed

Kumar, Vivek; Sen, Shashwati; Sharma, M; Muthe, K P; Jagannath; Gaur, N K; Gupta, S K

2009-09-01

Tellurium nanotubes were grown on bare and silver/gold nanoparticle (nucleation centers) deposited silicon substrates by vacuum deposition technique at a substrate temperature of 100 degrees C under high vacuum conditions. Silver and gold nanoparticles prepared on (111) oriented silicon substrates were found to act as nucleation centers for growth of Tellurium nanostructures. Density of nanotubes was found to increase while their diameter reduced when grown using metallic nanoparticle template. These Te nanostructures were investigated for their gas sensitivity. Tellurium nanotubes on Ag templates showed better response to NO in comparison to H2S and NH3 gases. Selectivity in response to NO was improved in comparison to Te thin film sensors reported earlier. The gas sensing mechanism was investigated using Raman and X-ray photoelectron spectroscopy techniques. The interaction of NO is seen to yield increased adsorption of oxygen that in turn increases hole density and conductivity in the material.

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suski, T.; Litwin-Staszewska, E.; Piotrzkowski, R.

We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentionalmore » donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.« less

High performance ZnO:Al films deposited on PET substrates using facing target sputtering

NASA Astrophysics Data System (ADS)

Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

2013-10-01

ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

Bimorph material/structure designs for high sensitivity flexible surface acoustic wave temperature sensors.

PubMed

Tao, R; Hasan, S A; Wang, H Z; Zhou, J; Luo, J T; McHale, G; Gibson, D; Canyelles-Pericas, P; Cooke, M D; Wood, D; Liu, Y; Wu, Q; Ng, W P; Franke, T; Fu, Y Q

2018-06-13

A fundamental challenge for surface acoustic wave (SAW) temperature sensors is the detection of small temperature changes on non-planar, often curved, surfaces. In this work, we present a new design methodology for SAW devices based on flexible substrate and bimorph material/structures, which can maximize the temperature coefficient of frequency (TCF). We performed finite element analysis simulations and obtained theoretical TCF values for SAW sensors made of ZnO thin films (~5 μm thick) coated aluminum (Al) foil and Al plate substrates with thicknesses varied from 1 to 1600 μm. Based on the simulation results, SAW devices with selected Al foil or plate thicknesses were fabricated. The experimentally measured TCF values were in excellent agreements with the simulation results. A normalized wavelength parameter (e.g., the ratio between wavelength and sample thickness, λ/h) was applied to successfully describe changes in the TCF values, and the TCF readings of the ZnO/Al SAW devices showed dramatic increases when the normalized wavelength λ/h was larger than 1. Using this design approach, we obtained the highest reported TCF value of -760 ppm/K for a SAW device made of ZnO thin film coated on Al foils (50 μm thick), thereby enabling low cost temperature sensor applications to be realized on flexible substrates.

Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

2018-06-01

The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fcc structure in the deposited Cu thin films was 〈1 1 1〉 oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the film-substrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition.

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate withoutmore » treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.« less

Formation of Indium-Doped Zinc Oxide Thin Films Using Ultrasonic Spray Pyrolysis: The Importance of the Water Content in the Aerosol Solution and the Substrate Temperature for Enhancing Electrical Transport.

PubMed

Biswal, Rajesh; Castañeda, Luis; Moctezuma, Rosario; Vega-Pérez, Jaime; Olvera, María De La Luz; Maldonado, Arturo

2012-03-12

Indium doped zinc oxide [ZnO:In] thin films have been deposited at 430°C on soda-lime glass substrates by the chemical spray technique, starting from zinc acetate and indium acetate. Pulverization of the solution was done by ultrasonic excitation. The variations in the electrical, structural, optical, and morphological characteristics of ZnO:In thin films, as a function of both the water content in the starting solution and the substrate temperature, were studied. The electrical resistivity of ZnO:In thin films is not significantly affected with the increase in the water content, up to 200 mL/L; further increase in water content causes an increase in the resistivity of the films. All films show a polycrystalline character, fitting well with the hexagonal ZnO wurtzite-type structure. No preferential growth in samples deposited with the lowest water content was observed, whereas an increase in water content gave rise to a (002) growth. The surface morphology of the films shows a consistency with structure results, as non-geometrical shaped round grains were observed in the case of films deposited with the lowest water content, whereas hexagonal slices, with a wide size distribution were observed in the other cases. In addition, films deposited with the highest water content show a narrow size distribution.

Wetting Transition of Nonpolar Neutral Molecule System on a Neutral and Atomic Length Scale Roughness Substrate

NASA Astrophysics Data System (ADS)

Zhou, Shiqi

2018-03-01

One recently proposed new method for accurately determining wetting temperature is applied to the wetting transition occurring in a single component nonpolar neutral molecule system near a neutral planar substrate with roughness produced by cosinusoidal modulation(s). New observations are summarized into five points: (i) for a planar substrate superimposed with one cosinusoidal modulation, with increasing of the periodicity length or the surface attraction force field, or decreasing of the amplitude, wetting temperature T_W drops accordingly and the three parameters show multiplication effect; moreover, both the periodicity length and amplitude effect curves display pole phenomena and saturation phenomena, and the T_W saturation occurs at small (for case of large amplitude) or large (for case of small amplitude) periodicity length side, respectively. (ii) In the case of the planar substrate superimposed with two cosinusoidal modulations with equal periodicity length, the initial phase difference is critical issue that influences the T_W, which decreases with the initial phase difference. (iii) In the case of the planar substrate superimposed with two cosinusoidal modulations with zero phase difference, change of the T_W with one periodicity length under the condition of another periodicity length unchanged is non-monotonous. (iv) When the parameters are chosen such that the T_W draws ever closer to the bulk critical temperature, wetting transition on the roughness substrate eventually does not occur. (v) The present microscopic calculation challenges traditional macroscopic theory by confirming that the atomic length scale roughness always renders the surface less hydrophilic and whereas the mesoscopical roughness renders the surface more hydrophilic. All of these observations summarized can be reasonably explained by the relative strength of the attraction actually enjoyed by the surface gas molecules to the attraction the gas molecules can get when in bulk.

Developing upconversion nanoparticle-based smart substrates for remote temperature sensing

NASA Astrophysics Data System (ADS)

Coker, Zachary; Marble, Kassie; Alkahtani, Masfer; Hemmer, Philip; Yakovlev, Vladislav V.

2018-02-01

Recent developments in understanding of nanomaterial behaviors and synthesis have led to their application across a wide range of commercial and scientific applications. Recent investigations span from applications in nanomedicine and the development of novel drug delivery systems to nanoelectronics and biosensors. In this study, we propose the application of a newly engineered temperature sensitive water-based bio-compatible core/shell up-conversion nanoparticle (UCNP) in the development of a smart substrate for remote temperature sensing. We developed this smart substrate by dispersing functionalized nanoparticles into a polymer solution and then spin-coating the solution onto one side of a microscope slide to form a thin film substrate layer of evenly dispersed nanoparticles. By using spin-coating to deposit the particle solution we both create a uniform surface for the substrate while simultaneously avoid undesired particle agglomeration. Through this investigation, we have determined the sensitivity and capabilities of this smart substrate and conclude that further development can lead to a greater range of applications for this type smart substrate and use in remote temperature sensing in conjunction with other microscopy and spectroscopy investigations.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

PubMed

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation

NASA Astrophysics Data System (ADS)

Ikarashi, Nobuyuki; Masuzaki, Koji

2011-03-01

Transmission electron microscopy (TEM) and ab initio calculations revealed that the Ni-Si reaction around 300 °C is significantly changed by adding Pt to Ni. TEM analysis clarified that NiSi2 was formed in a reaction between Ni thin film (˜1 nm) and Si substrate, while NiSi was formed when Pt was added to the Ni film. We also found that the Ni-adamantane structure, which acts as a precursor for NiSi2 formation around the reaction temperature, was formed in the former reaction but was significantly suppressed in the latter reaction. Theoretical calculations indicated that Pt addition increased stress at the Ni-adamantane structure/Si-substrate interface. The increase in interface stress caused by Pt addition should raise the interface energy to suppress the Ni-adamantane structure formation, leading to NiSi2 formation being suppressed.

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

NASA Astrophysics Data System (ADS)

Troughton, J. G.; Downs, P.; Price, R.; Atkinson, D.

2017-01-01

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

Analytical thermal resistance model for high power double-clad fiber on rectangular plate with convective cooling at upper and lower surfaces

NASA Astrophysics Data System (ADS)

Lv, Yi; Zheng, Huai; Liu, Sheng

2018-07-01

Whether convective heat transfer on the upper surface of the substrate is used or not, the thermal resistance network models of optical fiber embedded in the substrate are established in this research. These models are applied to calculate the heat dissipation in a high power ytterbium doped double-clad fiber (YDCF) power amplifier. Firstly, the temperature values of two points on the fiber are tested when there is no convective heat transfer on the upper surface. Then, the numerical simulation is used to verify the temperature change of the fiber with the effective convective heat transfer coefficient of the lower surface heff increasing when the upper surface is subjected to three loading conditions with hu as 1, 5 and 15 W/(m2 K), respectively. The axial temperature distribution of the optical fiber is also presented at four different values for hu when heff is 30 W/(m2 K). Absolute values of the relative errors are less than 7.08%. The results show that the analytical models can accurately calculate the temperature distribution of the optical fiber when the fiber is encapsulated into the substrate. The corresponding relationship is helpful to further optimize packaging design of the fiber cooling system.

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

The effects of environmental factors on daytime sandeel distribution and abundance on the Dogger Bank

NASA Astrophysics Data System (ADS)

van der Kooij, Jeroen; Scott, Beth E.; Mackinson, Steven

2008-10-01

Spring distribution and abundance of lesser sandeels during the day were linked to zooplankton densities, seabed substrate and various hydrographic factors using small scale empirical data collected in two areas on the Dogger Bank in 2004, 2005 and 2006. The results of a two-step generalized additive model (GAM) suggested that suitable seabed substrate and temperature best explain sandeel distribution (presence/absence) and that sandeel abundance (given presence) was best described by a model that included bottom temperature, difference between surface and bottom temperature and surface salinity. The current study suggests that suitable seabed substrate explains sandeel distribution in the water column. Bottom temperature and surface salinity also played an important role in explaining distribution and abundance, and we speculate that sandeels favour hydrographically dynamic areas. Contrary to our hypothesis sandeels were not strongly associated with areas of high zooplankton density. We speculate that in early spring on the western Dogger Bank plankton is still patchily distributed and that sandeels only emerge from the seabed when feeding conditions near their night-time burrowing habitat are optimal. The results also suggested that when abundance is over a threshold level, the number of sandeel schools increased rather than the schools becoming bigger. This relationship between patchiness and abundance has implications for mortality rates and hence fisheries management.

Rapidly curable electrically conductive clear coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowman, Mark P.; Anderson, Lawrence G.; Post, Gordon L.

2018-01-16

Rapidly curable electrically conductive clear coatings are applied to substrates. The electrically conductive clear coating includes to clear layer having a resinous binder with ultrafine non-stoichiometric tungsten oxide particles dispersed therein. The clear coating may be rapidly cured by subjecting the coating to infrared radiation that heats the tungsten oxide particles and surrounding resinous binder. Localized heating increases the temperature of the coating to thereby thermally cure the coating, while avoiding unwanted heating of the underlying substrate.

Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

PubMed

Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

2011-05-01

The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

The Effect of Deposition Conditions on Adhesion Strength of Ti and Ti6Al4V Cold Spray Splats

NASA Astrophysics Data System (ADS)

Goldbaum, Dina; Shockley, J. Michael; Chromik, Richard R.; Rezaeian, Ahmad; Yue, Stephen; Legoux, Jean-Gabriel; Irissou, Eric

2012-03-01

Cold spray is a complex process where many parameters have to be considered in order to achieve optimized material deposition and properties. In the cold spray process, deposition velocity influences the degree of material deformation and material adhesion. While most materials can be easily deposited at relatively low deposition velocity (<700 m/s), this is not the case for high yield strength materials like Ti and its alloys. In the present study, we evaluate the effects of deposition velocity, powder size, particle position in the gas jet, gas temperature, and substrate temperature on the adhesion strength of cold spayed Ti and Ti6Al4V splats. A micromechanical test technique was used to shear individual splats of Ti or Ti6Al4V and measure their adhesion strength. The splats were deposited onto Ti or Ti6Al4V substrates over a range of deposition conditions with either nitrogen or helium as the propelling gas. The splat adhesion testing coupled with microstructural characterization was used to define the strength, the type and the continuity of the bonded interface between splat and substrate material. The results demonstrated that optimization of spray conditions makes it possible to obtain splats with continuous bonding along the splat/substrate interface and measured adhesion strengths approaching the shear strength of bulk material. The parameters shown to improve the splat adhesion included the increase of the splat deposition velocity well above the critical deposition velocity of the tested material, increase in the temperature of both powder and the substrate material, decrease in the powder size, and optimization of the flow dynamics for the cold spray gun nozzle. Through comparisons to the literature, the adhesion strength of Ti splats measured with the splat adhesion technique correlated well with the cohesion strength of Ti coatings deposited under similar conditions and measured with tubular coating tensile (TCT) test.

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity.

PubMed

Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun

2018-02-01

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe 2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec -1 at room temperature based on bilayer n-MoS 2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS 2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS 2 /GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diffusion Barriers to Increase the Oxidative Life of Overlay Coatings

NASA Technical Reports Server (NTRS)

Nesbitt, James A.; Lei, Jih-Fen

1999-01-01

Currently, most blades and vanes in the hottest section of aero gas turbine engines require some type of coating for oxidation protection. Newly developed single crystal superalloys have the mechanical potential to operate at increasingly higher component temperatures. However, at these elevated temperatures, coating/substrate interdiffusion can shorten the protective life of the coating. Diffusion barriers between overlay coatings and substrates are being examined to extend the protective life of the coating. A previously- developed finite-difference diffusion model has been modified to predict the oxidative life enhancement due to use of a diffusion barrier. The original diffusion model, designated COSIM, simulates Al diffusion in the coating to the growing oxide scale as well as Al diffusion into the substrate. The COSIM model incorporates an oxide growth and spalling model to provide the rate of Al consumption during cyclic oxidation. Coating failure is predicted when the Al concentration at the coating surface drops to a defined critical level. The modified COSIM model predicts the oxidative life of an overlay coating when a diffusion barrier is present eliminating diffusion of Al from the coating into the substrate. Both the original and the modified diffusion models have been used to predict the effectiveness of a diffusion barrier in extending the protective life of a NiCrAl overlay coating undergoing cyclic oxidation at 1100 C.

Preparation of rutile TiO(2) coating by thermal chemical vapor deposition for anticoking applications.

PubMed

Tang, Shiyun; Wang, Jianli; Zhu, Quan; Chen, Yaoqiang; Li, Xiangyuan

2014-10-08

To inhibit the metal catalytic coking and improve the oxidation resistance of TiN coating, rutile TiO2 coating has been directly designed as an efficient anticoking coating for n-hexane pyrolysis. TiO2 coatings were prepared on the inner surface of SS304 tubes by a thermal CVD method under varied temperatures from 650 to 900 °C. The rutile TiO2 coating was obtained by annealing the as-deposited TiO2 coating, which is an alternative route for the deposition of rutile TiO2 coating. The morphology, elemental and phase composition of TiO2 coatings were characterized by SEM, EDX and XRD, respectively. The results show that deposition temperature of TiO2 coatings has a strong effect on the morphology and thickness of as-deposited TiO2 coatings. Fe, Cr and Ni at.% of the substrate gradually changes to 0 when the temperature is increased to 800 °C. The thickness of TiO2 coating is more than 6 μm and uniform by metalloscopy, and the films have a nonstoichiometric composition of Ti3O8 when the deposition temperature is above 800 °C. The anticoking tests show that the TiO2 coating at a deposition temperature of 800 °C is sufficiently thick to cover the cracks and gaps on the surface of blank substrate and cut off the catalytic coke growth effect of the metal substrate. The anticoking ratio of TiO2 coating corresponding to each 5 cm segments is above 65% and the average anticoking ratio of TiO2 coating is up to 76%. Thus, the TiO2 coating can provide a very good protective layer to prevent the substrate from severe coking efficiently.

Growth parameter dependent structural and optical properties of ZnO nanostructures on Si substrate by a two-zone thermal CVD.

PubMed

Lee, Hee Kwan; Yu, Jae Su

2012-04-01

We investigated the effect of growth parameters on the structural and optical properties of the ZnO nanostructures (NSs) grown on Au-coated Si substrate by a two-zone thermal chemical vapor deposition. The morphologies of ZnO NSs were controlled by various growth parameters, such as growth temperature, O2 flow rate, and working pressure, for different thicknesses of Au layer. The nanorod-like ZnO NSs were formed at 915 degrees C and the growth of two-dimensional structures, i.e., nanosheets, was enhanced with the increase of growth temperature up to 965 degrees C. It was found that the low working pressure contributed to improvement in vertical alignment and uniformity of ZnO NSs. The Zn/O atomic % ratio, which plays a key role in the growth mechanism of ZnO NSs, was changed by the growth parameters. The Zn/O atomic % ratio was increased with increasing the growth temperature, while it was decreased with increasing the working pressure. Under proper O2 flow rate, the ZnO nanorods with good crystallinity were fabricated with a Zn/O atomic % ratio of -0.9. For various growth parameters, the photoluminescence emission was slightly shifted with the ultraviolet emission related to the near band edge transition.

High temperature electronic gain device

DOEpatents

McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

1979-01-01

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

Thin transparent conducting films of cadmium stannate

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.

2001-01-01

A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

Electron drift velocity and mobility in graphene

NASA Astrophysics Data System (ADS)

Dong, Hai-Ming; Duan, Yi-Feng; Huang, Fei; Liu, Jin-Long

2018-04-01

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are sensitive to the electron density. These findings could be employed for the application of graphene for high-field nano-electronic devices.

Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

NASA Astrophysics Data System (ADS)

Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

2017-07-01

We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, Falah S.; Nelson, Art J.

1996-01-01

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

Deposition method for producing silicon carbide high-temperature semiconductors

DOEpatents

Hsu, George C.; Rohatgi, Naresh K.

1987-01-01

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Cation non-stoichiometry in pulsed laser deposited Sr{sub 2+y}Fe{sub 1+x}Mo{sub 1-x}O₆ epitaxial films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, T. L.; Woodward, P. M., E-mail: woodward.55@osu.edu; Dixit, M.

2014-07-07

Sr₂FeMoO₆ (SFMO) films were grown on SrTiO₃ (100)- and (111)-oriented substrates via pulsed laser deposition (PLD). In order to study the fundamental characteristics of deposition, films were grown in two different PLD chambers. In chamber I, the best films were grown with a relatively long substrate-to-target distance (89 mm), high substrate temperature (850 °C), and low pressure (50 mTorr) in a 95% Ar/5% H₂ atmosphere. Although X-ray diffraction (XRD) measurements indicate these films are single phase, Rutherford Backscattering (RBS) measurements reveal considerable non-stoichiometry, corresponding to a Sr₂Fe{sub 1–x}Mo{sub 1+x}O₆ composition with x≅0.2–0.3. This level of non-stoichiometry results in inferior magneticmore » properties. In chamber II, the best films were grown with a much shorter substrate-to-target distance (38 mm), lower temperature (680 °C), and higher pressure (225 mTorr). XRD measurements show that the films are single phase, and RBS measurements indicate that they are nearly stoichiometric. The degree of ordering between Fe and Mo was dependent on both the temperature and pressure used during deposition, reaching a maximum order parameter of 85%. The saturation magnetization increases as the Fe/Mo ordering increases, reaching a maximum of 2.4 μ B/f.u. Based on prior studies of bulk samples, one would expect a higher saturation magnetization for this degree of Fe/Mo order. The presence of extra strontium oxide layers in the form of Ruddlesden-Popper intergrowths appears to be responsible for the lower than expected saturation magnetization of these films.« less

Influence of Substrate Heating and Nitrogen Flow on the Composition, Morphological and Mechanical Properties of SiNx Coatings Aimed for Joint Replacements

PubMed Central

Skjöldebrand, Charlotte; Schmidt, Susann; Vuong, Vicky; Pettersson, Maria; Grandfield, Kathryn; Högberg, Hans; Engqvist, Håkan; Persson, Cecilia

2017-01-01

Silicon nitride (SiNx) coatings are promising for joint replacement applications due to their high wear resistance and biocompatibility. For such coatings, a higher nitrogen content, obtained through an increased nitrogen gas supply, has been found to be beneficial in terms of a decreased dissolution rate of the coatings. The substrate temperature has also been found to affect the composition as well as the microstructure of similar coatings. The aim of this study was to investigate the effect of the substrate temperature and nitrogen flow on the coating composition, microstructure and mechanical properties. SiNx coatings were deposited onto CoCrMo discs using reactive high power impulse magnetron sputtering. During deposition, the substrate temperatures were set to 200 °C, 350 °C or 430 °C, with nitrogen-to-argon flow ratios of 0.06, 0.17 or 0.30. Scanning and transmission electron spectroscopy revealed that the coatings were homogenous and amorphous. The coatings displayed a nitrogen content of 23–48 at.% (X-ray photoelectron spectroscopy). The surface roughness was similar to uncoated CoCrMo (p = 0.25) (vertical scanning interferometry). The hardness and Young’s modulus, as determined from nanoindentation, scaled with the nitrogen content of the coatings, with the hardness ranging from 12 ± 1 GPa to 26 ± 2 GPa and the Young’s moduli ranging from 173 ± 8 GPa to 293 ± 18 GPa, when the nitrogen content increased from 23% to 48%. The low surface roughness and high nano-hardness are promising for applications exposed to wear, such as joint implants. PMID:28772532

Substrate- and interface-mediated photocrystallization in a-Se films and multi-layers

NASA Astrophysics Data System (ADS)

Lindberg, G. P.; Tallman, R. E.; Weinstein, B. A.; Abbaszadeh, S.; Karim, K. S.; Reznik, A.

2012-02-01

Photocrystallization in a-Se films and layered a-Se structures is studied by Raman scattering as a function of temperature for photon energies near or slightly below the band gap. The samples are ˜16.5 μm thick films of a-Se grown i) directly on glass, ii) on indium tin oxide (ITO) coated glass, iii) on glass that is spin coated with 800nm polymide, and iv) on a Capton sheet. A low As-concentration (< 0.2 %) is present in several of the a-Se films. We compare the results on these samples to prior findings on a-Se HARP targets, and on a polymer-encapsulated a-Se film [1]. We observe strong evidence that the interface between the a-Se film and the underlying substrate and/or multi-layers plays an important role in the onset time and growth rate of photocrystallized Se domains. In some samples a discontinuous increase in the onset time with increasing temperature occurs near the glass transition (˜310K), and there is a surprising ``dead zone'' of no crystallization in this region. Other samples merely show a minimum in the onset time at similar temperatures, but no discontinuity and no region where crystallization is absent. Soft intermediate layers appear to increase stability against crystallization in an overlying a-Se film. The competing effects of substrate shear strain and thermal driving forces on the photocrystallization process are considered to account for these findings. [4pt] [1] R.E. Tallman et. al. J. Non-crystalline Sols. 354, 4577-81 (2008)

Temperature dependent surface and spectral modifications of nano V2O5 films

NASA Astrophysics Data System (ADS)

Manthrammel, M. Aslam; Fatehmulla, A.; Al-Dhafiri, A. M.; Alshammari, A. S.; Khan, Aslam

2017-03-01

Nanocrystalline V2O5 films have been deposited on glass substrates at 300°C substrate temperature using thermal evaporation technique and were subjected to thermal annealing at different temperatures 350, 400, and 550°C. X-ray diffraction (XRD) spectra exhibit sharper and broader characteristic peaks respectively indicating the rearrangement of nanocrystallite phases with annealing temperatures. Other phases of vanadium oxides started emerging with the rise in annealing temperature and the sample converted completely to VO2 (B) phase at 550°C annealing. FESEM images showed an increase in crystallite size with 350 and 400°C annealing temperatures followed by a decrease in crystallite size for the sample annealed at 550°C. Transmission spectra showed an initial redshift of the fundamental band edge with 350 and 400°C while a blue shift for the sample annealed at 550°C, which was in agreement with XRD and SEM results. The films exhibited smart window properties as well as nanorod growth at specific annealing temperatures. Apart from showing the PL and defect related peaks, PL studies also supported the observations made in the transmission spectra.

The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Gu, Chengyan; Sui, Zhanpeng; Li, Yuxiong; Chu, Haoyu; Ding, Sunan; Zhao, Yanfei; Jiang, Chunping

2018-03-01

Although metal nitride thin films have attractive prospects in plasmonic applications due to its stable properties in harsh environments containing high temperatures, shock, and contaminants, the effect of deposition parameters on the properties of the metallic ZrN grown on III-N semiconductors by pulse laser deposition still lacks of detailed exploration. Here we have successfully prepared metallic ZrNx films on p-GaN substrate by pulsed laser deposition in N2 ambient of various pressures at a fixed substrate temperature (475 °C). It is found that the films exhibit quite smooth surfaces and (111) preferred orientation. The X-ray photoelectron spectroscopy measurements indicate that carbon contamination can be completely removed and oxygen contamination is significantly reduced on the film surfaces after cleaning using Ar+ sputtering. The N/Zr ratio increases from 0.64 to 0.75 when the N2 pressure increases from 0.5 Pa to 3 Pa. The optical reflectivity spectra measured by the UV-vis-NIR spectrophotometer show that the ZrNx is a typical and good metallic-like material and its metallic properties can be tuned with changing the film compositions.

Compressive Properties of Open-Cell Al Hybrid Foams at Different Temperatures

PubMed Central

Liu, Jiaan; Si, Fujian; Zhu, Xianyong; Liu, Yaohui; Zhang, Jiawei; Liu, Yan; Zhang, Chengchun

2017-01-01

Hybrid Ni/Al foams were fabricated by depositing electroless Ni–P (EN) coatings on open-cell Al foam substrate to obtain enhanced mechanical properties. The microstructure, chemical components and phases of the hybrid foams were observed and analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. The mechanical properties of the foams were studied by compressive tests at different temperatures. The experiment results show that the coating is mainly composed of Ni and P elements. There was neither defect at the interface nor crack in the coatings, indicating that the EN coatings had fine adhesion to the Al substrate. The compressive strengths and energy absorption capacities of the as-received foam and hybrid foams decrease with the increasing testing temperatures, but the hybrid foams exhibit a lower decrement rate than the as-received foam. This might be attributed to the different failure mechanisms at different testing temperatures, which is conformed by fractography observation. PMID:28772456

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Water Drop Evaporation on Mushroom-like Superhydrophobic Surfaces: Temperature Effects.

PubMed

do Nascimento, Rodney Marcelo; Cottin-Bizonne, Cécile; Pirat, Christophe; Ramos, Stella M M

2016-03-01

We report on experiments of drop evaporation on heated superhydrophobic surfaces decorated with micrometer-sized mushroom-like pillars. We analyze the influence of two parameters on the evaporation dynamics: the solid-liquid fraction and the substrate temperature, ranging between 30 and 80 °C. In the different configurations investigated, the drop evaporation appears to be controlled by the contact line dynamics (pinned or moving). The experimental results show that (i) in the pinned regime, the depinning angles increase with decreasing contact fraction and the substrate heating promotes the contact line depinning and (ii) in the moving regime, the droplet motion is described by periodic stick-slip events and contact-angle oscillations. These features are highly smoothed at the highest temperatures, with two possible mechanisms suggested to explain such a behavior, a reduction in the elasticity of the triple line and a decrease in the depinning energy barriers. For all surfaces, the observed remarkable stability of the "fakir" state to the temperature is attributed to the re-entrant micropillar curvature that prevents surface imbibition.

Theoretical investigation about secondary deposition of thin-film formation by molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Chen, Huawei; Hagiwara, Ichiro; Kiet Tieu, A.; Kishimoto, Kikuo; Liu, Qiang

2007-05-01

The thin-film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin-film in short time as gas fluids through surface of substrate. Such growth mechanism has been mainly investigated on the basis of experiment. Due to immense cost of the experimental equipment and low level of current measurement technology, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin-film. In this simulation, three different cluster sizes of 203, 653, and 1563 atoms with different velocities (0, 10, 100, 1000, and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. To increase initial velocity not only enhanced the speed of epitaxial growth, adhesion between clusters and substrate, but also increased the degree of epitaxy for primary deposition and secondary deposition. Exfoliation pattern of thin-film was profoundly dependent on initial velocity through comparison between adhesion of primary and secondary deposition. Moreover, the epitaxial growth became well as the temperature of substrate was raised, and the degree of epitaxy of small cluster was larger than that of larger cluster, no matter of primary and secondary deposition.

Development and Characterization of a Hybrid Atmospheric Pressure Plasma Electrospinning System for Nanofiber Enhancement

NASA Astrophysics Data System (ADS)

Nowak, Joshua Michael

A hybrid atmospheric pressure-electrospinning plasma system was developed to be used for the production of nanofibers and enhance their performance for various applications. Electrospun nanofibers are excellent candidates for protective clothing in the field of chemical and biological warfare defense; however, nanofibers are structurally weak and easily abrade and tear. They can be strengthened through the support of a substrate fabric, but they do not adhere well to substrates. Through the use of the developed hybrid system with either pure He or He/O2 (99/1) feed gas, adherence to the substrate along with abrasion and flex resistance were improved. The plasma source was diagnosed electrically, thermally, and optically. An equivalent circuit model was developed for non-thermal, highly collisional plasmas that can solve for average electron temperature and electron number density. The obtained temperatures (~ 3eV) correlate very well with the results of a neutral Bremsstrahlung continuum matching technique that was also employed. Using the temperatures and number densities obtained from the circuit model and the optical spectroscopy, a global chemical kinetics code was written in order to solve for radical and ion concentrations. This code shows that there are significant concentrations of oxygen radicals present. The XPS analysis confirmed that there was an increase of surface oxygen from 11.1% up to 16.6% for the He/O2 plasma and that the C-O bonding, which was not present in the control samples, has increased to 45.4%. The adhesive strength to the substrate has a significant increase of 81% for helium plasma and 144% for He/O2 plasma; however, these values remain below the desired values for protective clothing applications. The hybrid system displayed the ability to oxygenate nanofibers as they are being electrospun and shows the feasibility of making other surface modifications. The developed circuit model and chemical kinetics code both show promise as tools for deterministic atmospheric pressure plasma research in the field of surface modifications.

Correlation of Critical Temperatures and Electrical Properties in Titanium Films

NASA Astrophysics Data System (ADS)

Gandini, C.; Lacquaniti, V.; Monticone, E.; Portesi, C.; Rajteri, M.; Rastello, M. L.; Pasca, E.; Ventura, G.

Recently transition-edge sensors (TES) have obtained an increasing interest as light detectors due to their high energy resolution and broadband response. Titanium (Ti), with transition temperature up to 0.5 K, is among the suitable materials for TES application. In this work we investigate Ti films obtained from two materials of different purity deposited by e-gun on silicon nitride. Films with different thickness and deposition substrate temperature have been measured. Critical temperatures, electrical resistivities and structural properties obtained from x-ray are related to each other.

Morphology and electronic transport of polycrystalline pentacene thin-film transistors

NASA Astrophysics Data System (ADS)

Knipp, D.; Street, R. A.; Völkel, A. R.

2003-06-01

Temperature-dependent measurements of thin-film transistors were performed to gain insight in the electronic transport of polycrystalline pentacene. Devices were fabricated with plasma-enhanced chemical vapor deposited silicon nitride gate dielectrics. The influence of the dielectric roughness and the deposition temperature of the thermally evaporated pentacene films were studied. Although films on rougher gate dielectrics and films prepared at low deposition temperatures exhibit similar grain size, the electronic properties are different. Increasing the dielectric roughness reduces the free carrier mobility, while low substrate temperature leads to more and deeper hole traps.

Surface segregation on Fe3%Si0.04%VC(100) single crystal surfaces

NASA Astrophysics Data System (ADS)

Uebing, C.; Viefhaus, H.

1990-10-01

Surface segregation phenomena on (100) oriented single crystal surfaces of the ferritic Fe-3%Si-0.04%V-C alloy were investigated by AES and LEED. At temperatures below 635 °C vanadium and carbon cosegregation is observed after prolonged heating. At thermodynamic equilibrium the substrate surface is saturated with the binary surface compound VC. The two-dimensional VC is epitaxially arranged on the substrate surface as indicated by LEED investigations. Its structure corresponds to the (100) plane of the three-dimensional VC with rocksalt structure. Sharp above 635 °C the surface compound VC is dissolved into the bulk. At higher temperatures the substrate surface is covered with segregated silicon forming a c(2 × 2) structure. This surface phase transition is reversible. Because of the low concentration and slow diffusion of vanadium, non-equilibrium surface states are formed as intermediates upon segregation of silicon and carbon. Below 500 °C a disordered graphite layer with a characteristical asymmetrical C Auger peak is observed on the substrate surface. Above 500 °C carbon segregation leads to the formation of an ordered c(2 × 2) structure with a symmetrical C Auger peak being characteristic for carbidic or atomically adsorbed species. At increasing temperatures silicon segregation takes place leading to a c(2 × 2) structure. Between silicon and carbon site competition is effective.

The influence of external factors on the corrosion resistance of high temperature superconductor thin films against moisture

NASA Astrophysics Data System (ADS)

Murugesan, M.; Obara, H.; Yamasaki, H.; Kosaka, S.

2006-12-01

High temperature superconductor (HTS) thin films have been systematically investigated for their corrosion resistance against moisture by studying the role of external factors such as temperature (T), relative humidity (RH), and the type of substrates in the corrosion. In general, (i) the corrosion is progressed monotonously with increasing T as well as RH, (ii) a threshold level of water vapor is needed to cause degradation, and (iii) between T and RH, the influence of T is more dominant. HTS films on SrTiO3 and CeO2 buffered sapphire (cbs) substrates showed better corrosion stability and a low rate of degradation in the critical current density as compared to that of the film grown on MgO substrate. Between DyBa2Cu3Oz (DBCO) and YBa2Cu3Oz, the former is reproducibly found to have many fold higher corrosion resistance against moisture. This observed enhancement in the corrosion resistance in DBCO could be explained by the improved microstructure in the films and the better lattice matching with the substrate. Thus, the dual advantage of DBCO/cbs films, i.e., the enhanced corrosion stability of DBCO and the appropriate dielectric properties of sapphire, can be readily exploited for the use of DBCO/cbs films in the microwave and power devices.

Effects of sol-gel processing parameters on the phases and microstructures of HA films.

PubMed

Wang, Diangang; Chen, Chuanzhong; Liu, Xiuna; Lei, Tingquan

2007-06-15

Bioactive hydroxyapatite (HA) films were fabricated by a sol-gel method and triethylphosphate and calcium nitrate were used as the phosphorus and calcium precursors, respectively. The effects of the heat treatment temperature, pH level and substrate materials on the phases and microstructures of HA films were studied by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and electronic probe microanalysis (EPMA) and so on. The results show that all the sol-gel films are composed of the phases of HA, CaO, TiO(2) and CaTiO(3). With increasing the calcining temperature, the crystallinity of the films increases, the structure becomes more compact and changes from granular and lamellar to cellular structure, and the Ca/P ratio increases slightly because of the loss of P in the films. The addition of ammonia (adjusting the pH level to be about 7.5) can increase the HA content in the films, and the difference of substrate materials only has a little influence on the microstructure of the sol-gel films.

Simulation study of temperature-dependent diffusion behaviors of Ag/Ag(001) at low substrate temperature

NASA Astrophysics Data System (ADS)

Cai, Danyun; Mo, Yunjie; Feng, Xiaofang; He, Yingyou; Jiang, Shaoji

2017-06-01

In this study, a model based on the First Principles calculations and Kinetic Monte Carlo simulation were established to study the growth characteristic of Ag thin film at low substrate temperature. On the basis of the interaction between the adatom and nearest-neighbor atoms, some simplifications and assumptions were made to categorize the diffusion behaviors of Ag adatoms on Ag(001). Then the barriers of all possible diffusion behaviors were calculated using the Climbing Image Nudged Elastic Band method (CI-NEB). Based on the Arrhenius formula, the morphology variation, which is attributed to the surface diffusion behaviors during the growth, was simulated with a temperature-dependent KMC model. With this model, a non-monotonic relation between the surface roughness and the substrate temperature (decreasing from 300 K to 100 K) were discovered. The analysis of the temperature dependence on diffusion behaviors presents a theoretical explanation of diffusion mechanism for the non-monotonic variation of roughness at low substrate temperature.

An improved electrical and thermal model of a microbolometer for electronic circuit simulation

NASA Astrophysics Data System (ADS)

Würfel, D.; Vogt, H.

2012-09-01

The need for uncooled infrared focal plane arrays (IRFPA) for imaging systems has increased since the beginning of the nineties. Examples for the application of IRFPAs are thermography, pedestrian detection for automotives, fire fighting, and infrared spectroscopy. It is very important to have a correct electro-optical model for the simulation of the microbolometer during the development of the readout integrated circuit (ROIC) used for IRFPAs. The microbolometer as the sensing element absorbs infrared radiation which leads to a change of its temperature due to a very good thermal insulation. In conjunction with a high temperature coefficient of resistance (TCR) of the sensing material (typical vanadium oxide or amorphous silicon) this temperature change results in a change of the electrical resistance. During readout, electrical power is dissipated in the microbolometer, which increases the temperature continuously. The standard model for the electro-optical simulation of a microbolometer includes the radiation emitted by an observed blackbody, radiation emitted by the substrate, radiation emitted by the microbolometer itself to the surrounding, a heat loss through the legs which connect the microbolometer electrically and mechanically to the substrate, and the electrical power dissipation during readout of the microbolometer (Wood, 1997). The improved model presented in this paper takes a closer look on additional radiation effects in a real IR camera system, for example the radiation emitted by the casing and the lens. The proposed model will consider that some parts of the radiation that is reflected from the casing and the substrate is also absorbed by the microbolometer. Finally, the proposed model will include that some fraction of the radiation is transmitted through the microbolometer at first and then absorbed after the reflection at the surface of the substrate. Compared to the standard model temperature and resistance of the microbolometer can be modelled more realistically when these higher order effects are taken into account. A Verilog-A model for electronic circuit simulations is developed based on the improved thermal model of the microbolometer. Finally, a simulation result of a simple circuit is presented.

The microbial temperature sensitivity to warming is controlled by thermal adaptation and is independent of C-quality across a pan-continental survey

NASA Astrophysics Data System (ADS)

Berglund, Eva; Rousk, Johannes

2017-04-01

Climate models predict that warming will result in an increased loss of soil organic matter (SOM). However, field experiments suggest that although warming results in an immediate increase in SOM turnover, the effect diminishes over time. Although the use and subsequent turnover of SOM is dominated by the soil microbial community, the underlying physiology underpinning warming responses are not considered in current climate models. It has been suggested that a reduction in the perceived quality of SOM to the microbial community, and changes in the microbial thermal adaptation, could be important feed-backs to soil warming. Thus, studies distinguishing between temperature relationships and how substrate quality influences microbial decomposition are a priority. We examined microbial communities and temperature sensitivities along a natural climate gradient including 56 independent samples from across Europe. The gradient included mean annual temperatures (MAT) from ca -4 to 18 ˚ C, along with wide spans of environmental factors known to influence microbial communities, such as pH (4.0 to 8.8), nutrients (C/N from 7 to 50), SOM (from 4 to 94%), and plant communities, etc. The extensive ranges of environmental conditions resulted in wide ranges of substrate quality, indexed as microbial respiration per unit SOM, from 5-150 μg CO2g-1 SOM g-1 h-1. We hypothesised microbial communities to (1) be adapted to the temperature of their climate, leading to warm adapted bacterial communities that were more temperature sensitive (higher Q10s) at higher MAT; (2) have temperature sensitivities affected by the quality of SOM, with higher Q10s for lower quality SOM. To determine the microbial use of SOM and its dependence on temperature, we characterized microbial temperature dependences of bacterial growth (leu inc), fungal growth (ac-in-erg) and soil respiration in all 56 sites. Temperature dependences were determined using brief (ca. 1-2 h at 25˚ C) laboratory incubation experiments including temperatures from 0 to 35˚ C. Temperature relationships were modelled using the Ratkowsky model, and cardinal points including minimum temperature (Tmin) for growth and respiration along with temperature sensitivity (Q10) values were used as indices to compare sites. Microbial communities were cold-adapted in cold sites and warm-adapted in warm sites, as shown by Tmin values ranging from ca. -20 ˚ C to 0 ˚ C. For every 1˚ C rise in MAT, Tmin increased by 0.22˚ C and 0.28˚ C for bacteria and fungi, respectively. Soil respiration was less dependent on MAT, increasing 0.16 ˚ C per 1˚ C. Temperature dependence analyses grew stronger when regressed against summer temperatures, and weaker when regressed against winter temperatures. Hence, microbial communities adjusted their temperature dependence for growth more than for respiration, and higher temperatures had more impact than low temperatures did. The correlation between Tmin and MAT resulted in Q10s increasing with MAT, showing that microorganisms from cold regions were less temperature sensitive than those from warmer regions. For every 1˚ C increase in MAT, Q10 increased with 0.04 and 0.03 units for bacterial and fungal growth respectively, and 0.08 units for soil respiration. In contrast to previous studies, we found no relationship between temperature sensitivity and substrate quality. We demonstrate that the strongest driver of variation in microbial temperatures sensitivities (Q10s) is the microbial adaptation to its thermal environment. Surprisingly, the quality of SOM had no influence on the temperature sensitivity. This calls for a revision of the understanding for how microbial decomposers feed-back to climate warming. Specifically, the thermal adaptation of microbial communities need to be incorporated into climate models to capture responses to warming, while the quality of SOM can be ignored.

Articles for high temperature service and methods for their manufacture

DOEpatents

Sarrafi-Nour, Reza; Meschter, Peter Joel; Johnson, Curtis Alan; Luthra, Krishan Lal; Rosenzweig, Larry Steven

2016-06-14

An article for use in aggressive environments is presented. In one embodiment, the article comprises a substrate and a self-sealing and substantially hermetic sealing layer comprising an alkaline-earth aluminosilicate disposed over the bondcoat. The substrate may be any high-temperature material, including, for instance, silicon-bearing ceramics and ceramic matrix composites. A method for making such articles is also presented. The method comprises providing a substrate; disposing a self-sealing alkaline-earth aluminosilicate layer over the substrate; and heating the sealing layer to a sealing temperature at which at least a portion of the sealing layer will flow.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

NASA Astrophysics Data System (ADS)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Verwey transition in a magnetite ultrathin film by resonant x-ray scattering

NASA Astrophysics Data System (ADS)

Grenier, S.; Bailly, A.; Ramos, A. Y.; De Santis, M.; Joly, Y.; Lorenzo, J. E.; Garaudée, S.; Frericks, M.; Arnaud, S.; Blanc, N.; Boudet, N.

2018-03-01

We report a detailed study of the Verwey transition in a magnetite ultrathin film (UTF) grown on Ag(001) using resonant x-ray scattering (RXS). RXS was measured at the Fe K-edge on the crystal truncation rod of the substrate, increasing the sensitivity to the film thanks to the cross-interference, thereby obtaining an x-ray phase-shift reference and a polarization analyzer. The spectra were interpreted with ad hoc calculations based on density functional theory within a surface-scattering formalism. We observed that the UTF has a relatively sharp transition temperature TV=120 K and is remarkably close to the bulk temperature for such thickness. We determined the specific Fe stacking at the interface with the substrate below TV, and detected a spectroscopic signal evolving with temperature from TV up to at least TV+80 K, hinting that the RT crystallographic structure does not set at TV in the UTF.

Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions

NASA Astrophysics Data System (ADS)

Ling, Bo; Zhao, Jun Liang; Sun, Xiao Wei; Tan, Swee Tiam; Kyaw, Aung Ko Ko; Divayana, Yoga; Dong, Zhi Li

2010-07-01

Wide-range color tuning from red to blue was achieved in phosphor-free p+-Si/p-CuAlO2/n-ZnO nanorod light-emitting diodes at room temperature. CuAlO2 films were deposited on p+-Si substrates by sputtering followed by annealing. ZnO nanorods were further grown on the annealed p+-Si/p-CuAlO2 substrates by vapor phase transport. The color of the p-CuAlO2/n-ZnO nanorod array heterojunction electroluminescence depended on the annealing temperature of the CuAlO2 film. With the increase of the annealing temperature from 900 to 1050 °C, the emission showed a blueshift under the same forward bias. The origin of the blueshift is related to the amount of Cu concentration diffused into ZnO.

Data on the detail information of influence of substrate temperature on the film morphology and photovoltaic performance of non-fullerene organic solar cells.

PubMed

Zhang, Jicheng; Xie, SuFei; Lu, Zhen; Wu, Yang; Xiao, Hongmei; Zhang, Xuejuan; Li, Guangwu; Li, Cuihong; Chen, Xuebo; Ma, Wei; Bo, Zhishan

2017-10-01

This data contains additional data related to the article "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" (Jicheng Zhang et al., In press) [1]. Data include measurement and characterization instruments and condition, detail condition to fabricate norfullerene solar cell devices, hole-only and electron-only devices. Detail condition about how to control the film morphology of devices via tuning the temperature of substrates was also displayed. More information and more convincing data about the change of film morphology for active layers fabricated from different temperature, which is attached to the research article of "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" was given.

Method and apparatus for forming conformal SiN.sub.x films

DOEpatents

Wang, Qi

2007-11-27

A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.

Distributed Capacitive Sensor for Sample Mass Measurement

NASA Technical Reports Server (NTRS)

Toda, Risaku; McKinney, Colin; Jackson, Shannon P.; Mojarradi, Mohammad; Manohara, Harish; Trebi-Ollennu, Ashitey

2011-01-01

Previous robotic sample return missions lacked in situ sample verification/ quantity measurement instruments. Therefore, the outcome of the mission remained unclear until spacecraft return. In situ sample verification systems such as this Distributed Capacitive (DisC) sensor would enable an unmanned spacecraft system to re-attempt the sample acquisition procedures until the capture of desired sample quantity is positively confirmed, thereby maximizing the prospect for scientific reward. The DisC device contains a 10-cm-diameter pressure-sensitive elastic membrane placed at the bottom of a sample canister. The membrane deforms under the weight of accumulating planetary sample. The membrane is positioned in close proximity to an opposing rigid substrate with a narrow gap. The deformation of the membrane makes the gap narrower, resulting in increased capacitance between the two parallel plates (elastic membrane and rigid substrate). C-V conversion circuits on a nearby PCB (printed circuit board) provide capacitance readout via LVDS (low-voltage differential signaling) interface. The capacitance method was chosen over other potential approaches such as the piezoelectric method because of its inherent temperature stability advantage. A reference capacitor and temperature sensor are embedded in the system to compensate for temperature effects. The pressure-sensitive membranes are aluminum 6061, stainless steel (SUS) 403, and metal-coated polyimide plates. The thicknesses of these membranes range from 250 to 500 m. The rigid substrate is made with a 1- to 2-mm-thick wafer of one of the following materials depending on the application requirements glass, silicon, polyimide, PCB substrate. The glass substrate is fabricated by a microelectromechanical systems (MEMS) fabrication approach. Several concentric electrode patterns are printed on the substrate. The initial gap between the two plates, 100 m, is defined by a silicon spacer ring that is anodically bonded to the glass substrate. The fabricated proof-of-concept devices have successfully demonstrated tens to hundreds of picofarads of capacitance change when a simulated sample (100 g to 500 g) is placed on the membrane.

Growth of ultra-thin TiO 2 films by spray pyrolysis on different substrates

NASA Astrophysics Data System (ADS)

Oja Acik, I.; Junolainen, A.; Mikli, V.; Danilson, M.; Krunks, M.

2009-12-01

In the present study TiO 2 films were deposited by spray pyrolysis method onto ITO covered glass and Si (1 0 0) substrates. The spray solution containing titanium(IV) isopropoxide, acetylacetone and ethanol was sprayed at a substrate temperature of 450 °C employing 1-125 spray pulses (1 s spray and 30 s pause). According to AFM, continuous coverage of ITO and Si substrates with TiO 2 layer is formed by 5-10 and below 5 spray pulses, respectively. XPS studies revealed that TiO 2 film growth on Si substrate using up to 4 spray pulses follows 2D or layer-by-layer-growth. Above 4 spray pulses, 3D or island growth becomes dominant irrespective of the substrate. Only 50 spray pulses result in TiO 2 layer with the thickness more than XPS measurement escape depth as any signal from the substrate could not be detected. TiO 2 grain size remains 30 nm on ITO and increases from 10-20 nm to 50-100 nm on Si substrate with the number of spray pulses from 1 to 125.

Characterization and purification of polyphenol oxidase from artichoke (Cynara scolymus L.).

PubMed

Dogan, Serap; Turan, Yusuf; Ertürk, Hatibe; Arslan, Oktay

2005-02-09

In this study, the polyphenol oxidase (PPO) of artichoke (Cynara scolymus L.) was first purified by a combination of (NH(4))(2)SO(4) precipitation, dialysis, and a Sepharose 4B-L-tyrosine-p-aminobenzoic acid affinity column. At the end of purification, 43-fold purification was achieved. The purified enzyme migrated as a single band on sodium dodecyl sulfate-polyacrylamide gel electrophoresis. Polyacrylamide gel electrophoresis indicated that PPO had a 57 kDa molecular mass. Second, the contents of total phenolic and protein of artichoke head extracts were determined. The total phenolic content of artichoke head was determined spectrophotometrically according to the Folin-Ciocalteu procedure and was found to be 425 mg 100 g(-1) on a fresh weight basis. Protein content was determined according to Bradford method. Third, the effects of substrate specificity, pH, temperature, and heat inactivation were investigated on the activity of PPO purified from artichoke. The enzyme showed activity to 4-methylcatechol, pyrogallol, catechol, and L-dopa. No activity was detected toward L-tyrosine, resorsinol, and p-cresol. According to V(max)/K(m) values, 4-methylcatechol (1393 EU min(-1) mM(-1)) was the best substrate, followed by pyrogallol (1220 EU min(-1) mM(-1)), catechol (697 EU min(-1) mM(-1)), and L-dopa (102 EU min(-1) mM(-1)). The optimum pH values for PPO were 5.0, 8.0, and 7.0 using 4-methylcatechol, pyrogallol, and catechol as substrate, respectively. It was found that optimum temperatures were dependent on the substrates studied. The enzyme activity decreased due to heat denaturation of the enzyme with increasing temperature and inactivation time for 4-methylcatechol and pyrogallol substrates. However, all inactivation experiments for catechol showed that the activity of artichoke PPO increased with mild heating, reached a maximum, and then decreased with time. Finally, inhibition of artichoke PPO was investigated with inhibitors such as L-cysteine, EDTA, ascorbic acid, gallic acid, d,L-dithiothreitol, tropolone, glutathione, sodium azide, benzoic acid, salicylic acid, and 4-aminobenzoic acid using 4-methylcatechol, pyrogallol, and catechol as substrate. The presence of EDTA, 4-aminobenzoic acid, salicylic acid, gallic acid, and benzoic acid did not cause the inhibition of artichoke PPO. A competitive-type inhibition was obtained with sodium azide, L-cysteine, and d,L-dithiothreitol inhibitors using 4-methylcatechol as substrate; with L-cysteine, tropolone, d,L-dithiothreitol, ascorbic acid, and sodium azide inhibitors using pyrogallol as substrate; and with L-cysteine, tropolone, d,L-dithiotreitol, and ascorbic acid inhibitors using catechol as a substrate. A mixed-type inhibition was obtained with glutathione inhibitor using 4-methylcatechol as a substrate. A noncompetitive inhibition was obtained with tropolone and ascorbic acid inhibitors using 4-methylcatechol as substrate, with glutathione inhibitor using pyrogallol as substrate, and with glutathione and sodium azide inhibitors using catechol as substrate. From these results, it can be said that the most effective inhibitor for artichoke PPO is tropolone. Furthermore, it was found that the type of inhibition depended on the origin of the PPO studied and also on the substrate used.

Surface electronic states of low-temperature H-plasma-exposed Ge(100)

NASA Astrophysics Data System (ADS)

Cho, Jaewon; Nemanich, R. J.

1992-11-01

The surface of low-temperature H-plasma-cleaned Ge(100) was studied by angle-resolved UV-photoemission spectroscopy and low-energy electron diffraction (LEED). The surface was prepared by an ex situ preclean followed by an in situ H-plasma exposure at a substrate temperature of 150-300 °C. Auger-electron spectroscopy indicated that the in situ H-plasma clean removed the surface contaminants (carbon and oxygen) from the Ge(100) surface. The LEED pattern varied from a 1×1 to a sharp 2×1, as the substrate temperature was increased. The H-induced surface state was identified at ~5.6 eV below EF, which was believed to be mainly due to the ordered or disordered monohydride phases. The annealing dependence of the spectra showed that the hydride started to dissociate at a temperature of 190 °C, and the dangling-bond surface state was identified. A spectral shift upon annealing indicated that the H-terminated surfaces were unpinned. After the H-plasma clean at 300 °C the dangling-bond surface state was also observed directly with no evidence of H-induced states.

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

NASA Astrophysics Data System (ADS)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

Modelling toehold-mediated RNA strand displacement.

PubMed

Šulc, Petr; Ouldridge, Thomas E; Romano, Flavio; Doye, Jonathan P K; Louis, Ard A

2015-03-10

We study the thermodynamics and kinetics of an RNA toehold-mediated strand displacement reaction with a recently developed coarse-grained model of RNA. Strand displacement, during which a single strand displaces a different strand previously bound to a complementary substrate strand, is an essential mechanism in active nucleic acid nanotechnology and has also been hypothesized to occur in vivo. We study the rate of displacement reactions as a function of the length of the toehold and temperature and make two experimentally testable predictions: that the displacement is faster if the toehold is placed at the 5' end of the substrate; and that the displacement slows down with increasing temperature for longer toeholds. Copyright © 2015 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

NASA Astrophysics Data System (ADS)

Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

2008-03-01

We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

The effect of temperature, matrix alloying and substrate coatings on wettability and shear strength of Al/Al2O3 couples

NASA Astrophysics Data System (ADS)

Sobczak, N.; Ksiazek, M.; Radziwill, W.; Asthana, R.; Mikulowski, B.

2004-03-01

A fresh approach has been advanced to examine in the Al/Al2O3 system the effects of temperature, alloying of Al with Ti or Sn, and Ti and Sn coatings on the substrate, on contact angles measured using a sessile-drop test, and on interface strength measured using a modified push-off test that allows shearing of solidified droplets with less than 90 deg contact angle. In the modified test, the solidified sessile-drop samples are bisected perpendicular to the drop/Al2O3 interface at the midplane of the contact circle to obtain samples that permit bond strength measurement by stress application to the flat surface of the bisected couple. The test results show that interface strength is strongly influenced by the wetting properties; low contact angles correspond to high interface strength, which also exhibits a strong temperature dependence. An increase in the wettability test temperature led to an increase in the interface strength in the low-temperature range where contact angles were large and wettability was poor. The room-temperature shear tests conducted on thermally cycled sessile-drop test specimens revealed the effect of chemically formed interfacial oxides; a weakening of the thermally cycled Al/Al2O3 interface was caused under the following conditions: (1) slow contact heating and short contact times in the wettability test, and (2) fast contact heating and longer contact times. The addition of 6 wt pct Ti or 7 wt pct Sn to Al only marginally influenced the contact angle and interfacial shear strength. However, Al2O3 substrates having thin (<1 µm) Ti coatings yielded relatively low contact angles and high bond strength, which appears to be related to the dissolution of the coating in Al and formation of a favorable interface structure.

Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

NASA Astrophysics Data System (ADS)

Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

2018-04-01

The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Synthesis and Characterization of TiO2/SiO2 Thin Film via Sol-Gel Method

NASA Astrophysics Data System (ADS)

Halin, D. S. C.; Abdullah, M. M. A. B.; Mahmed, N.; Malek, S. N. A. Abdul; Vizureanu, P.; Azhari, A. W.

2017-06-01

TiO2/SiO2 thin films were prepared by sol-gel spin coating method. Structural, surface morphology and optical properties were investigated for different annealing temperatures at 300°C, 400°C and 500°C. X-ray diffraction pattern show that brookite TiO2 crystalline phase with SiO2 phase presence at 300°C. At higher temperatures of 400-500°C, the only phase presence was brookite. The surface morphology of film was characterized by scanning electron microscopy (SEM). The films annealed at 300°C shows an agglomeration of small flaky with crack free. When the temperature of annealing increase to 400-500°C, the films with large flaky and large cracks film were formed which was due to surface tension between the film and the air during the drying process. The UV-Vis spectroscopy shows that the film exhibits a low transmittance around 30% which was due to the substrate is inhomogeneously covered by the films. In order to improve the coverage of the film on the substrate, it has to repeatable the spin coating to ensure the substrate is fully covered by the films.

Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

NASA Technical Reports Server (NTRS)

Bharatan, Sudhakar; Iyer, Shanthi; Matney, Kevin; Collis, Ward J.; Nunna Kalyan; Li, Jia; Wu, Liangjin; McGuire, Kristopher; McNeil, Laurie E.

2006-01-01

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.

Method of making a light weight battery plaque

NASA Technical Reports Server (NTRS)

Reid, M. A.; Post, R. E.; Soltis, D. G. (Inventor)

1984-01-01

A nickel plaque which may be coated with a suitable metal or compound to make an electrode for a fuel cell or battery is fabricated by directing nickel sensitizer, catalyst and plating solutions through a porous plastic substrate in the order named and at prescribed temperatures and flow rates. A boride compound dissolved in the plating solution decreases the electrical resistance of the plaque. Certain substrates may require treatment in an alkali solution to dissolve filler materials thereby increasing porosity to a required 65%.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

Self-Heating Pasteurization of Substrates for Culinary-Medicinal Mushrooms Cultivation in Mexico.

PubMed

Morales, Viviana; Sánchez, Jose E

2017-01-01

The aim of this study was to evaluate a self-heating pasteurization technique in preparing substrates for mushroom production. Seven species were used: Agrocybe aegerita, Auricularia fuscosuccinea, Pleurotus djamor, P. eryngii, P. ostreatus, Lentinula edodes, and Ganoderma lucidum. They were cultivated on grass, corncob, wood shavings, and a mixture thereof. The self-heating technique allowed for pasteurization of 3 of the substrates (grass, corncob, and the mixture). The preheating chamber comprised a drawer placed under the pasteurization crate. With this chamber, it was possible to increase inlet air temperatures by 4--5°C. The evaluated mushroom species responded in different ways to the pasteurization process. P. ostreatus (control) and P. djamor produced basidiomes when cultivated in all pasteurization substrates. A. aegerita and P. eryngii fruited only on corncob and the mixture, whereas A. fuscosuccinea fruited only on the pasteurized corncob. G. lucidum and L. edodes did not fructify on the pasteurized substrates.

Origin of the mosaicity in graphene grown on Cu(111)

NASA Astrophysics Data System (ADS)

Nie, Shu; Wofford, Joseph M.; Bartelt, Norman C.; Dubon, Oscar D.; McCarty, Kevin F.

2011-10-01

We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally misaligned with the substrate, generating grain boundaries upon interisland impingement. New rotational boundaries are also generated as graphene grows across substrate step bunches. Thus, rougher substrates lead to higher degrees of mosaicity than do flatter substrates. Increasing the growth temperature improves crystallographic alignment. We demonstrate that graphene growth on Cu(111) is surface diffusion limited by comparing simulations of the time evolution of island shapes with experiments. Islands are dendritic with distinct lobes, but unlike the polycrystalline, four-lobed islands observed on (100)-textured Cu foils, each island can be a single crystal. Thus, epitaxial graphene on smooth, clean Cu(111) has fewer structural defects than it does on Cu(100).

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Self-Sorting of Bidispersed Colloidal Particles Near Contact Line of an Evaporating Sessile Droplet.

PubMed

Patil, Nagesh D; Bhardwaj, Rajneesh; Sharma, Atul

2018-06-13

Here, we investigate deposit patterns and associated morphology formed after the evaporation of an aqueous droplet containing mono- and bidispersed colloidal particles. In particular, the combined effect of substrate heating and particle diameter is investigated. We employ high-speed visualization, optical microscopy, and scanning electron microscopy to characterize the evaporating droplets, particle motion, and deposit morphology, respectively. In the context of monodispersed colloidal particles, an inner deposit and a typical ring form for smaller and larger particles, respectively, on a nonheated surface. The formation of the inner deposit is attributed to early depinning of the contact line, explained by a mechanistic model based on the balance of several forces acting on a particle near the contact line. At larger substrate temperature, a thin ring with inner deposit forms, explained by the self-pinning of the contact line and advection of the particles from the contact line to the center of the droplet due to the Marangoni flow. In the context of bidispersed colloidal particles, self-sorting of the colloidal particles within the ring occurs at larger substrate temperature. The smaller particles deposit at the outermost edge compared to the larger particles, and this preferential deposition in a stagnation region near the contact line is due to the spatially varying height of the liquid-gas interface above the substrate. The sorting occurs at a smaller ratio of the diameters of the smaller and larger particles. At larger substrate temperature and larger ratio, the particles do not get sorted and mix into each other. Our measurements show that there exists a critical substrate temperature as well as a diameter ratio to achieve the sorting. We propose regime maps on substrate temperature-particle diameter and substrate temperature-diameter ratio plane for mono- and bidispersed solutions, respectively.

Pulsed-Laser Crystallization of Ferroelectric/Piezoelectric Oxide Thin Films

NASA Astrophysics Data System (ADS)

Rajashekhar, Adarsh

Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400°C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550°C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates. In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures < 215°C were investigated. (111) Pt/Si substrates were utilized to understand the process window. Laser energy densities studied were in the range 35 - 85 mJ/cm2. The Pb content in the films was varied via the Ar gas pressure (in the range 5 mTorr - 9 mTorr) during sputtering of amorphous films. It was seen that a higher Pb content in the asdeposited films aided nucleation of the perovskite phase. Ozone-containing ambients (10% O3/90% O2) during the annealing promoted the formation of the metastable Pb-rich pyrochlore/fluorite phase, while annealing in pure oxygen produced the perovskite phase at relatively lower annealing laser energy densities. Heterogeneous nucleation from the substrate is favored on utilizing a layer-by-layer growth and crystallization process. Films were also grown on polymers using this method. Ferroelectric switching was demonstrated, but extensive process optimization would be needed to reduce leakage and porosity. Real time laser annealing during growth allows for scaling of the layer-by-layer growth process. A pulsed laser deposition system with in situ laser annealing was thus designed, built, and utilized to grow Pb(Zr 0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of 370°C. Polycrystalline 1.1 microm thick films exhibited columnar grains with small grain sizes ( 30 nm). The films showed well-saturated hysteresis loops (with a remanent polarization of 25 microC/cm2, and a coercive field of 50 kV/cm) and exhibited loss tangents <2.5% with a permittivity of 730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O3 sol-gel seed layers, while epitaxial {001} films were prepared on (100) SrTiO 3 single crystals. In order to study the microstructure evolution in these films, in situ pulsed-laser annealing was used to grow crystalline lead zirconate titanate (PbZr0.52Ti0.48O3) thin films at a substrate temperature of 370°C on PbZr0.30Ti 0.70O3-buffered platinized silicon substrates. Transmission electron microscopy (TEM) analysis indicated that the films were well crystallized into columnar grains, but with pores segregated at the grain boundaries. Lateral densification of the grain columns was significantly improved by reducing the partial pressure of oxygen from 120 mTorr to 50 mTorr, presumably due to enhanced adatom mobility at the surface accompanying increased bombardment. It was found that varying the fractional annealing duration with respect to the deposition duration produced little effect on lateral grain growth. However, increasing the fractional annealing duration led to shift of 111 PZT X-ray diffraction peaks to higher 2theta values, suggesting residual in-plane tensile stresses in the films. Thermal simulations were used to understand the annealing process. Evolution of the film microstructure is described in terms of transient heating from the pulsed laser determining the nucleation events, while the energy of the arriving species dictates grain growth/coarsening.

Determination of trace tin by solid substrate-room temperature phosphorimetry using sodium dodecyl sulfate as sensitizer

NASA Astrophysics Data System (ADS)

Jiaming, Liu; Guohui, Zhu; Tianlong, Yang; Aihong, Wu; Yan, Fu; Longdi, Li

2003-07-01

The effects of different surfactants on solid substrate-room temperature phosphorescence (SS-RTP) properties of Sn4+-morin systems were investigated. It was found that the SS-RTP intensity of luminescence system was increased greatly in presence of sodium dodecyl sulfate (SDS). A new highly sensitive method for the determination of trace tin has been proposed based on sensitization of SDS on SS-RTP intensity of morin-tin system on the filter paper substrate. The linear dynamic range of this method is 8.0-112 ag per spot (with the volume of 0.4 μl per spot) with a detection limit of 4.0 ag per spot, and the regression equation is ΔIp=199.7+3.456mSn(IV) (ag per spot), with the correlation coefficient r=0.9998 (n=7). This simple, rapid and reproducible method has been applied to determine the amount of tin in real samples with satisfactory results.

High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

NASA Astrophysics Data System (ADS)

Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

2018-05-01

This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

Biogas production from wheat straw and manure--impact of pretreatment and process operating parameters.

PubMed

Risberg, Kajsa; Sun, Li; Levén, Lotta; Horn, Svein Jarle; Schnürer, Anna

2013-12-01

Non-treated or steam-exploded straw in co-digestion with cattle manure was evaluated as a substrate for biogas production compared with manure as the sole substrate. All digestions were performed in laboratory-scale CSTR reactors (5L) operating with an organic loading late of approximately 2.8 g VS/L/day, independent of substrate mixture. The hydraulic retention was 25 days and an operating temperature of 37, 44 or 52°C. The co-digestion with steam exploded straw and manure was evaluated with two different mixtures, with different proportion. The results showed stable performance but low methane yields (0.13-0.21 N L CH4/kg VS) for both manure alone and in co-digestion with the straw. Straw appeared to give similar yield as manure and steam-explosion treatment of the straw did not increase gas yields. Furthermore, there were only slight differences at the different operating temperatures. Copyright © 2013 Elsevier Ltd. All rights reserved.

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

2014-06-01

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

Tuning the magnetic properties of LaCoO3 thin films by epitaxial strain

NASA Astrophysics Data System (ADS)

Fuchs, D.; Arac, E.; Pinta, C.; Schuppler, S.; Schneider, R.; v. Löhneysen, H.

2008-01-01

Ferromagnetic order can be induced in LaCoO3 (LCO) thin films by epitaxial strain. Here, we show that the magnetic properties can be “tuned” by epitaxial strain imposed on LCO thin films by the epitaxial growth on various substrate materials, i.e., (001) oriented SrLaAlO4 , LaAlO3 , SrLaGaO4 , (LaAlO3)0.3(Sr2AlTaO6)0.7 , and SrTiO3 . The lattice mismatch at room temperature of the in-plane lattice parameters between the substrate, as , and bulk LCO, ab , ranges from -1.31% to +2.63% . Single-phase, ⟨001⟩ oriented LCO thin films were grown by pulsed laser deposition on all these substrates. Due to the difference of the thermal-expansion coefficients between LCO and the substrates, the films experience an additional tensile strain of about +0.3% during the cooling process after the deposition at Ts=650°C . The film lattice parameters display an elastic behavior, i.e., an increase of the in-plane film lattice parameter with increasing as . From the ratio between the out-of-plane and in-plane strain, we obtain a Poisson ratio of ν≈1/3 . All films show a ferromagnetic transition as determined from magnetization measurements. The magnetization increases strongly with increasing tensile strain, whereas the transition temperature TC after a rapid initial rise appears to saturate at TC≈85K above a=3.86Å . The effective magnetic moment μeff in the paramagnetic state increases almost linearly as a function of the mean lattice parameter ⟨a⟩ , indicating an enhanced population of higher spin states, i.e., intermediate- or high-spin states. The experimental results are discussed in terms of a decrease of the octahedral-site rotation with increasing tensile strain.

Rapid Annealing Of Amorphous Hydrogenated Carbon

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1989-01-01

Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

2016-08-01

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

Thickness-dependent multiferroic behavior of BiFe0.75Cr0.25O3 films over Pt(111)/Ti/SiO2/Si substrate

NASA Astrophysics Data System (ADS)

William, R. V.; Sivaprakash, P.; Marikani, A.; Reddy, V. Raghavendra; Arumugam, S.

2018-02-01

We present here the experimental results of BiFe0.75Cr0.25O3 (BFCO) thin film deposited by sol-gel spin coating technique directly on Pt(111)/Ti/SiO2/Si substrate at different thicknesses. The crystal structure of BFCO has been investigated using X-ray diffraction which acts as a double perovskite structure with high crystallinity obtained at 400 °C. Further microscopic studies such as scanning electron microscope (SEM) with EDAX, transmission electron microscope (TEM) were also used in identifying the grain size and particle distribution over Pt (111) substrate. Atomic force microscopy (AFM) on the films at a different thickness (- 80 to - 250 nm) reveals that the surface roughness and other amplitude parameters increases with the increase in thickness signifying an increase of grain size with thickness. Increase in grain size and substrate clamping effect between the BFCO film and the substrate induces change in ferroelectric polarization and dielectric properties in relation to thickness effect. Similarly, decrease in magnetization from 9.241 emu/cm3 (- 80 nm) to 5.7791 emu/cm3 (- 250 nm) is attributed to the formation of anti-sites and anti-phase boundaries in the films. In addition, temperature dependence of magnetization reveals ferromagnetic super-exchange interaction of BFCO which is unlike the spin structure of antiferromagnetic BiFeO3.

Heat flux microsensor measurements and calibrations

NASA Technical Reports Server (NTRS)

Terrell, James P.; Hager, Jon M.; Onishi, Shinzo; Diller, Thomas E.

1992-01-01

A new thin-film heat flux gage has been fabricated specifically for severe high temperature operation using platinum and platinum-10 percent rhodium for the thermocouple elements. Radiation calibrations of this gage were performed at the AEDC facility over the available heat flux range (approx. 1.0 - 1,000 W/cu cm). The gage output was linear with heat flux with a slight increase in sensitivity with increasing surface temperature. Survivability of gages was demonstrated in quench tests from 500 C into liquid nitrogen. Successful operation of gages to surface temperatures of 750 C has been achieved. No additional cooling of the gages is required because the gages are always at the same temperature as the substrate material. A video of oxyacetylene flame tests with real-time heat flux and temperature output is available.

Threefold growth efficiency improvement of silica nanosprings by using silica nanosprings as a substrate

NASA Astrophysics Data System (ADS)

Corti, Giancarlo; Brown, Justin; Rajabi, Negar; McIlroy, D. N.

2018-03-01

The growth efficiency of one-dimension (1D) nanostructures via the vapor-liquid-solid process is commonly attributed to parameters such as precursor vapor pressure, substrate temperature, and the choice of the catalyst. The work presented herein is an investigation of the use of silica nanosprings (SNs) as a 3D substrate for improving the growth efficiency of SN themselves. SNs are a 1D nanomaterial that form a nonwoven structure with optimal geometric characteristics and surface properties that mitigate collisions between growing nanosprings and ripening of the gold catalyst, which should improve SN yield. Nanospring growth, for an eight hour period, on an SN coated surface relative to an equivalent flat substrate increased from ≈25 mgh-1 to ≈80 mgh-1, respectively. All things being equal, by splitting the typical amount of catalyst, in this case gold, between the first and second growth, the double growth procedure produced more than three times more nanosprings than the equivalent single growth of a SN. In addition, using an SN as a substrate increased the sustained growth condition from four to eight hours, and thus increased by a factor of ten the gravimetric yield of SNs relative to the mass of gold used.

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

NASA Astrophysics Data System (ADS)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer

NASA Astrophysics Data System (ADS)

Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

2018-04-01

Techniques of handling thin and fragile substrates in a high-temperature process are highly required for the fabrication of semiconductor devices including thin film transistors (TFTs). In our previous study, we proposed applying the surface activated bonding (SAB) method using Si intermediate layers to the bonding and debonding of glass substrates. The SAB method has successfully bonded glass substrates at room temperature, and the substrates have been debonded after heating at 450 °C, in which TFTs are fabricated on thin glass substrates for LC display devices. In this study, we conducted the bonding and debonding of Si and glass in order to understand the mechanism in the proposed process. Si substrates are also successfully bonded to glass substrates at room temperature and debonded after heating at 450 °C using the proposed bonding process. By the composition analysis of bonding interfaces, it is clarified that the absorbed water on the glass forms interfacial voids and cause the decrease in bond strength.

Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.

Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching withmore » temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.« less

Epitaxial growth and chemical vapor transport of ZnTe by closed-tube method

NASA Astrophysics Data System (ADS)

Ogawa, H.; Nishio, M.; Arizumi, T.

1981-04-01

The epitaxial growth of ZnTe in a ZnTe- I2 system by a closed tube method is investigated by varying the charged iodine concentration ( MI2) or the temperature difference ( ΔT) between the high and low temperature zones. The transport rate is a function of MI2 and ΔT and has a minimum value increasing monotonically at higher and lower iodine concentration, and it increases with increasing ΔT. This experimental result can be explained well by thermodynamical calculations. The growth rate of ZnTe has the same tendency as the transport rate. The surface morphology of epitaxial layer on (110)ZnTe is not sinificantly affected by MI2 but becomes smoother with increasing temperature. The surface morphology and the growth rate of ZnTe layers also depend upon the orientation of substrate. The epitaxial layer can be obtained at temperature as low as 623°C.

The DIRT on Q10: In situ depletion of labile-inputs does not increase temperature sensitivity in a laboratory incubation (Invited)

NASA Astrophysics Data System (ADS)

Reynolds, L. L.; Lajtha, K.; Bowden, R.; Johnson, B. R.; Bridgham, S. D.

2013-12-01

The decomposition of soil organic matter is expected to increase with global warming and has been commonly described by kinetic models with at least two pools with differing turnover times. Pools characterized by rapid turnover are thought to consist of labile substrates. Meanwhile, slower turnover is attributed, in part, to greater chemical complexity and a necessarily higher activation energy which should in turn lead to a higher sensitivity (Q10) to temperature and a proportionally larger response to warming. Experimental tests of the relative Q10 of these pools have been inconclusive and contradictory in part due the fact that all pools are decomposing simultaneously and soils kept under differing conditions over long periods of time diverge in more than the Q10 response making them less comparable over time. We present here a test of the temperature response on soils from a 20 yr litter manipulation experiment incubated under an experimental regime that minimizes divergence among the soils. We hypothesize that 1) if exclusion of inputs has depleted labile substrates and 2) the remaining carbon is more chemically complex, then the input exclusion treatments should show a higher Q10 compared to the ambient or increased input treatments. The soils are taken from the Detritus Input and Removal Treatment (DIRT) plots in the Bousson Forest, Pennsylvania, US. The DIRT treatments consist of litter and root exclusion (no inputs = NI), no roots (NR), no litter (NL), double litter (DL), and ambient conditions (C). Soils were incubated at 25oC for 525 days. Periodically, replicate sets were rotated into 15oC, 35oC or remained at 25oC for 24 hr. The headspace CO2 concentration was measured before and after the 24 hr temperature treatments, and then all replicate sets were returned to 25oC. Twenty years of input exclusion decreased respiration rate, with NI < NR = NL < C = DL, and total carbon content, and thus, we conclude, labile substrates. The respiration rate at 25oC was the same for all replicate sets throughout, indicating no divergence due to the temperature rotations. Contrary to our hypothesis, our data indicates that Q10 was similar among the DIRT treatments, despite the clear differences in their carbon pools. Similar studies have examined the temperature response due to depletion labile substrate through laboratory incubation, rather beginning with presumably very different initial labile pools. Our results would suggest that soils with differing soil carbon content and presumably differing carbon quality have the same relative temperature responses. Recent studies have questioned the putative importance of chemical recalcitrance in soils, which would explain our results relative to the predictions of enzymatic kinetic theory.

Selection of the best chemical pretreatment for lignocellulosic substrate Prosopis juliflora.

PubMed

Naseeruddin, Shaik; Srilekha Yadav, K; Sateesh, L; Manikyam, Ananth; Desai, Suseelendra; Venkateswar Rao, L

2013-05-01

Pretreatment is a pre-requisite step in bioethanol production from lignocellulosic biomass required to remove lignin and increase the porosity of the substrate for saccharification. In the present study, chemical pretreatment of Prosopis juliflora was performed using alkali (NaOH, KOH, and NH3), reducing agents (Na2S2O4, Na2SO3) and NaClO2 in different concentration ranges at room temperature (30±2 °C) to remove maximum lignin with minimum sugar loss. Further, biphasic acid hydrolysis of the various pretreated substrates was performed at mild temperatures. Considering the amount of holocellulose hydrolyzed and inhibitors released during hydrolysis, best chemical pretreatment was selected. Among all the chemicals investigated, pretreatment with sodium dithionite at concentration of 2% (w/v) removed maximum lignin (80.46±1.35%) with a minimum sugar loss (2.56±0.021%). Subsequent biphasic acid hydrolysis of the sodium dithionite pretreated substrate hydrolyzed 40.09±1.22% of holocellulose and released minimum amount of phenolics (1.04±0.022 g/L) and furans (0.41±0.012 g/L) in the hydrolysate. Copyright © 2013 Elsevier Ltd. All rights reserved.

Electrospark doping of steel with tungsten

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru; Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensionalmore » approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.« less

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

NASA Technical Reports Server (NTRS)

Warner, Joseph D.; Bhasin, Kul B.; Miranda, Felix A.

1991-01-01

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Preparation of CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Yukio; Yamaguchi, Toshiyuki; Suzuki, Masayoshi

For fabricating efficient tandem solar cells, CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films have been prepared on Si(100), Si(110) and Si(111) substrates in the temperature range (R.T.{approximately}400 C) by rf sputtering. From EPMA analysis, these sputtered thin films are found to be nearly stoichiometric over the whole substrate temperature range, irrespective of the azimuth plane of the Si substrate. XPS studies showed that the compositional depth profile in these thin films is uniform. X-ray diffraction analysis indicated that all the thin films had a chalcopyrite structure. CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films were strongly oriented along the (112) plane with increasingmore » the substrate temperature, independent of the azimuth plane of the Si substrate, suggesting the larger grain growth.« less

Low Temperature Activation of Supported Metathesis Catalysts by Organosilicon Reducing Agents

PubMed Central

2016-01-01

Alkene metathesis is a widely and increasingly used reaction in academia and industry because of its efficiency in terms of atom economy and its wide applicability. This reaction is notably responsible for the production of several million tons of propene annually. Such industrial processes rely on inexpensive silica-supported tungsten oxide catalysts, which operate at high temperatures (>350 °C), in contrast with the mild room temperature reaction conditions typically used with the corresponding molecular alkene metathesis homogeneous catalysts. This large difference in the temperature requirements is generally thought to arise from the difficulty in generating active sites (carbenes or metallacyclobutanes) in the classical metal oxide catalysts and prevents broader applicability, notably with functionalized substrates. We report here a low temperature activation process of well-defined metal oxo surface species using organosilicon reductants, which generate a large amount of active species at only 70 °C (0.6 active sites/W). This high activity at low temperature broadens the scope of these catalysts to functionalized substrates. This activation process can also be applied to classical industrial catalysts. We provide evidence for the formation of a metallacyclopentane intermediate and propose how the active species are formed. PMID:27610418

Residual efficacy of methoprene for control of Tribolium castaneum (Coleoptera: Tenebrionidae) larvae at different temperatures on varnished wood, concrete, and wheat.

PubMed

Wijayaratne, L K Wolly; Fields, Paul G; Arthur, Frank H

2012-04-01

The residual efficacy of the juvenile hormone analog methoprene (Diacon II) was evaluated in bioassays using larvae of Tribolium castaneum (Herbst) (Coleoptera: Tenebrionidae) exposed on unsealed concrete or varnished wood treated with a liquid formulation and held at different temperatures. When these two types of surfaces were stored at 20, 30 or 35 degrees C for 0-24 wk, the percentage of adult emergence on concrete increased with time. In contrast, there was no adult emergence from larvae exposed to varnished wood at 24 wk after treatment at any of these temperatures. The presence of flour reduced residual efficacy of methoprene on concrete, but not on varnished wood, with no differences between cleaning frequencies. Methoprene was also stable for 48 h on concrete held at 65 degrees C and wheat, Triticum aestivum L., held at 46 degrees C. Results show that methoprene is stable at a range of temperatures commonly encountered in indoor food storage facilities and at high temperatures attained during insecticidal heat treatments of structures. The residual persistence of methoprene applied to different surface substrates may be affected more by the substrate than by temperature.

Piezoelectric substrate effect on electron-acoustic phonon scattering in bilayer graphene

NASA Astrophysics Data System (ADS)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We have studied the effect of piezoelectric scattering as a function of electron temperature and distance between the sample and the substrate on electron-acoustic phonon scattering rate in Bilayer Graphene sitting on a piezoelectric substrate. We obtain approximate analytical result by neglecting the chiral nature of carriers and then proceed to obtain unapproximated numerical results for the scattering rate incorporating chirality of charge carriers. We find that on the incorporation of full numerical computation the magnitude as well as the power exponent both is affected with the power exponent changed from T3 to T3.31 in the low temperature range and to T6.98 dependence in the temperature range (>5K). We also find that the distance between the sample and substrate begins to strongly affect the scattering rate at temperatures above 10K. These calculation not only suggest the influencing effect of piezoelectric substrate on the transport properties of Dirac Fermions at very low temperatures but also open a channel to study low dimension structures by probing piezoelectric acoustical phonons.

Prenucleation Induced by Crystalline Substrates

NASA Astrophysics Data System (ADS)

Men, H.; Fan, Z.

2018-04-01

Prenucleation refers to the phenomenon of atomic ordering in the liquid adjacent to the substrate/liquid interface at temperatures above the liquidus. In this paper, we have systematically investigated and holistically quantified the prenucleation phenomenon as a function of temperature and the lattice misfit between the substrate and the solid, using molecular dynamics (MD) simulations. Our results have confirmed that at temperatures above the liquidus, the atoms in the liquid at the interface may exhibit pronounced atomic ordering, manifested by atomic layering normal to the interface, in-plane atomic ordering parallel to the interface, and the formation of a 2-dimensional (2D) ordered structure (a few atomic layers in thickness) on the substrate surface. Holistic quantification of such atomic ordering at the interface has revealed that the atomic layering is independent of lattice misfit and is only slightly enhanced by reducing temperature while both in-plane atomic ordering and the formation of the 2D ordered structure are significantly enhanced by reducing the lattice misfit and/or temperature. This substrate-induced atomic ordering in the liquid may have a significant influence on the subsequent heterogeneous nucleation process.

Carbon nanotubes on a substrate

DOEpatents

Gao, Yufei [Kennewick, WA; Liu, Jun [West Richland, WA

2002-03-26

The present invention includes carbon nanotubes whose hollow cores are 100% filled with conductive filler. The carbon nanotubes are in uniform arrays on a conductive substrate and are well-aligned and can be densely packed. The uniformity of the carbon nanotube arrays is indicated by the uniform length and diameter of the carbon nanotubes, both which vary from nanotube to nanotube on a given array by no more than about 5%. The alignment of the carbon nanotubes is indicated by the perpendicular growth of the nanotubes from the substrates which is achieved in part by the simultaneous growth of the conductive filler within the hollow core of the nanotube and the densely packed growth of the nanotubes. The present invention provides a densely packed carbon nanotube growth where each nanotube is in contact with at least one nearest-neighbor nanotube. The substrate is a conductive substrate coated with a growth catalyst, and the conductive filler can be single crystals of carbide formed by a solid state reaction between the substrate material and the growth catalyst. The present invention further provides a method for making the filled carbon nanotubes on the conductive substrates. The method includes the steps of depositing a growth catalyst onto the conductive substrate as a prepared substrate, creating a vacuum within a vessel which contains the prepared substrate, flowing H2/inert (e.g. Ar) gas within the vessel to increase and maintain the pressure within the vessel, increasing the temperature of the prepared substrate, and changing the H2/Ar gas to ethylene gas such that the ethylene gas flows within the vessel. Additionally, varying the density and separation of the catalyst particles on the conductive substrate can be used to control the diameter of the nanotubes.

Method of making carbon nanotubes on a substrate

DOEpatents

Gao, Yufei; Liu, Jun

2006-03-14

The present invention includes carbon nanotubes whose hollow cores are 100% filled with conductive filler. The carbon nanotubes are in uniform arrays on a conductive substrate and are well-aligned and can be densely packed. The uniformity of the carbon nanotube arrays is indicated by the uniform length and diameter of the carbon nanotubes, both which vary from nanotube to nanotube on a given array by no more than about 5%. The alignment of the carbon nanotubes is indicated by the perpendicular growth of the nanotubes from the substrates which is achieved in part by the simultaneous growth of the conductive filler within the hollow core of the nanotube and the densely packed growth of the nanotubes. The present invention provides a densely packed carbon nanotube growth where each nanotube is in contact with at least one nearest-neighbor nanotube. The substrate is a conductive substrate coated with a growth catalyst, and the conductive filler can be single crystals of carbide formed by a solid state reaction between the substrate material and the growth catalyst. The present invention further provides a method for making the filled carbon nanotubes on the conductive substrates. The method includes the steps of depositing a growth catalyst onto the conductive substrate as a prepared substrate, creating a vacuum within a vessel which contains the prepared substrate, flowing H2/inert (e.g. Ar) gas within the vessel to increase and maintain the pressure within the vessel, increasing the temperature of the prepared substrate, and changing the H2/Ar gas to ethylene gas such that the ethylene gas flows within the vessel. Additionally, varying the density and separation of the catalyst particles on the conductive substrate can be used to control the diameter of the nanotubes.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, F.S.; Nelson, A.J.

1996-01-16

A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, Kurt H.

1996-01-01

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

Methods for determining enzymatic activity comprising heating and agitation of closed volumes

DOEpatents

Thompson, David Neil; Henriksen, Emily DeCrescenzo; Reed, David William; Jensen, Jill Renee

2016-03-15

Methods for determining thermophilic enzymatic activity include heating a substrate solution in a plurality of closed volumes to a predetermined reaction temperature. Without opening the closed volumes, at least one enzyme is added, substantially simultaneously, to the closed volumes. At the predetermined reaction temperature, the closed volumes are agitated and then the activity of the at least one enzyme is determined. The methods are conducive for characterizing enzymes of high-temperature reactions, with insoluble substrates, with substrates and enzymes that do not readily intermix, and with low volumes of substrate and enzyme. Systems for characterizing the enzymes are also disclosed.

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

PubMed

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

Radiation Damage Formation And Annealing In Mg-Implanted GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whelan, Sean; Kelly, Michael J.; Yan, John

2005-06-30

We have implanted GaN with Mg ions over an energy range of 200keV to 1MeV at substrate temperatures of -150 (cold) and +300 deg. C (hot). The radiation damage formation in GaN was increased for cold implants when compared to samples implanted at elevated temperatures. The increase in damage formation is due to a reduction in the dynamic defect annealing during ion irradiation. The dopant stopping in the solid also depends upon the implant temperature. For a fixed implant energy and dose, Mg ions have a shorter range in GaN for cold implants when compared to hot implants which ismore » caused by the increase in scattering centres (disorder)« less

Plates for vacuum thermal fusion

DOEpatents

Davidson, James C.; Balch, Joseph W.

2002-01-01

A process for effectively bonding arbitrary size or shape substrates. The process incorporates vacuum pull down techniques to ensure uniform surface contact during the bonding process. The essence of the process for bonding substrates, such as glass, plastic, or alloys, etc., which have a moderate melting point with a gradual softening point curve, involves the application of an active vacuum source to evacuate interstices between the substrates while at the same time providing a positive force to hold the parts to be bonded in contact. This enables increasing the temperature of the bonding process to ensure that the softening point has been reached and small void areas are filled and come in contact with the opposing substrate. The process is most effective where at least one of the two plates or substrates contain channels or grooves that can be used to apply vacuum between the plates or substrates during the thermal bonding cycle. Also, it is beneficial to provide a vacuum groove or channel near the perimeter of the plates or substrates to ensure bonding of the perimeter of the plates or substrates and reduce the unbonded regions inside the interior region of the plates or substrates.

Vacuum pull down method for an enhanced bonding process

DOEpatents

Davidson, James C.; Balch, Joseph W.

1999-01-01

A process for effectively bonding arbitrary size or shape substrates. The process incorporates vacuum pull down techniques to ensure uniform surface contact during the bonding process. The essence of the process for bonding substrates, such as glass, plastic, or alloys, etc., which have a moderate melting point with a gradual softening point curve, involves the application of an active vacuum source to evacuate interstices between the substrates while at the same time providing a positive force to hold the parts to be bonded in contact. This enables increasing the temperature of the bonding process to ensure that the softening point has been reached and small void areas are filled and come in contact with the opposing substrate. The process is most effective where at least one of the two plates or substrates contain channels or grooves that can be used to apply vacuum between the plates or substrates during the thermal bonding cycle. Also, it is beneficial to provide a vacuum groove or channel near the perimeter of the plates or substrates to ensure bonding of the perimeter of the plates or substrates and reduce the unbonded regions inside the interior region of the plates or substrates.

Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

NASA Astrophysics Data System (ADS)

Linh, Dang Khanh; Khanh, Nguyen Quoc

2018-03-01

We calculate the zero-temperature conductivity of bilayer graphene (BLG) impacted by Coulomb impurity scattering using four different screening models: unscreened, Thomas-Fermi (TF), overscreened and random phase approximation (RPA). We also calculate the conductivity and thermal conductance of BLG using TF, zero- and finite-temperature RPA screening functions. We find large differences between the results of the models and show that TF and finite-temperature RPA give similar results for diffusion thermopower Sd. Using the finite-temperature RPA, we calculate temperature and density dependence of Sd in BLG on SiO2, HfO2 substrates and suspended BLG for different values of interlayer distance c and distance between the first layer and the substrate d.

TiC-Fe-Based Composite Coating Prepared by Self-Propagating High-Temperature Synthesis

NASA Astrophysics Data System (ADS)

He, Shen; Fan, Xi'an; Chang, Qingming; Xiao, Lixiang

2017-06-01

TiC-Fe-based composite coatings were prepared in situ by self-propagating high-temperature synthesis combined with vacuum expendable pattern casting process. The band-like TiC phase embedded in a continuous Fe binder. There were no obvious defects and impurities at the interface between coatings and matrices. Fe presented consecutively in the coating zones and substrate zones without interruption and the microhardness in the cross-sectional area of the coating-matrix reduces continuously from the coating to the matrix area, indicating a good metallurgical bonding between the coatings and matrices. The effect of casting temperature on the microstructure and hardness of TiC-Fe-based composite coating was investigated in detail. The TiC particles formed at low casting temperature were nearly spherical in shape, and the size of TiC particles increased with increasing casting temperature due to more agglomeration. The hardness of the coatings increased first and then decreased with increasing casting temperature, and reached the highest value of 68 HRC when the casting temperature was 1773 K (1500 °C), which was twice more than that of the matrix.

Activation energy for diamond growth from the carbon-hydrogen gas system at low substrate temperatures

NASA Astrophysics Data System (ADS)

Stiegler, J.; Lang, T.; von Kaenel, Y.; Michler, J.; Blank, E.

1997-01-01

The growth kinetics of diamond films deposited at low substrate temperatures (600-400 °C) from the carbon-hydrogen gas system have been studied. When the substrate temperature alone was varied, independently of all other process parameters in the microwave plasma reactor, an activation energy in the order of 7 kcal/mol was observed. This value did not change with different carbon concentrations in hydrogen. It is supposed that growth kinetics in this temperature range are controlled by a single chemical reaction, probably the abstraction of surface bonded hydrogen by gas phase atomic hydrogen.

Preparation of Platinum (Pt) Counter Electrode Coated by Electrochemical Technique at High Temperature for Dye-sensitized Solar Cell (DSSC) Application

NASA Astrophysics Data System (ADS)

Ponken, Tanachai; Tagsin, Kamonlapron; Suwannakhun, Chuleerat; Luecha, Jakkrit; Choawunklang, Wijit

2017-09-01

Pt counter electrode was coated by electrochemical method. Electrolyte solution was synthesized by platinum (IV) choloride (PtCl4) powder dissolved in hydrochloric acid solution. Pt films were deposited on the FTO substrate. Deposition time of 10, 30 and 60 minutes, the coating current of 5, 10, 15 and 20 mA and electrolyte solution temperatures for Pt layer synthesis of 25, 30 and 40°C were varied. Surface morphology and optical properties was analyzed by digital microscopic and UV-vis spectrophotometer. Pt films exhibit uniform surface area highly for all the conditions of coating current in the deposition time of 30 and 40 minutes at 40°C. Transmittance values of Pt films deposited on FTO substrate has approximately of 5 to 50 % show that occur high reflection corresponding to dye molecule absorption increases. DSSC device was fabricated from the TiO2 standard and immersed in dye N719 for 24 hours. Efficiency was measured by solar simulator. Efficiency value obtains as high as 5.91 % for the coating current, deposition time and solution temperature of 15 mA, 30 minutes and 40°C. Summary, influence of temperature effects efficiency increasing. Pt counter electrode can be prepared easily and the suitable usefully for DSSC.

Formation of Indium-Doped Zinc Oxide Thin Films Using Ultrasonic Spray Pyrolysis: The Importance of the Water Content in the Aerosol Solution and the Substrate Temperature for Enhancing Electrical Transport

PubMed Central

Biswal, Rajesh; Castañeda, Luis; Moctezuma, Rosario; Vega-Pérez, Jaime; De La Luz Olvera, María; Maldonado, Arturo

2012-01-01

Indium doped zinc oxide [ZnO:In] thin films have been deposited at 430°C on soda-lime glass substrates by the chemical spray technique, starting from zinc acetate and indium acetate. Pulverization of the solution was done by ultrasonic excitation. The variations in the electrical, structural, optical, and morphological characteristics of ZnO:In thin films, as a function of both the water content in the starting solution and the substrate temperature, were studied. The electrical resistivity of ZnO:In thin films is not significantly affected with the increase in the water content, up to 200 mL/L; further increase in water content causes an increase in the resistivity of the films. All films show a polycrystalline character, fitting well with the hexagonal ZnO wurtzite-type structure. No preferential growth in samples deposited with the lowest water content was observed, whereas an increase in water content gave rise to a (002) growth. The surface morphology of the films shows a consistency with structure results, as non-geometrical shaped round grains were observed in the case of films deposited with the lowest water content, whereas hexagonal slices, with a wide size distribution were observed in the other cases. In addition, films deposited with the highest water content show a narrow size distribution. PMID:28817056

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Textured substrate tape and devices thereof

DOEpatents

Goyal, Amit

2006-08-08

A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

The Effect of Palladium Additions on the Solidus/Liquidus Temperatures and Wetting Properties of Ag-CuO Based Air Brazes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darsell, Jens T.; Weil, K. Scott

2007-05-16

As a means of increasing the use temperature of ceramic-ceramic and ceramic-metal air brazes, palladium was investigated as possible ternary addition to the currently employed silver - copper oxide system. The silver component was directly substituted with palladium to form the following series of alloys: (100-y)[(100-z)Pd - (z)Ag] - (y)CuOx where y = 0 - 34 mol% CuOx, z = 50 - 100 mol% silver, and x = 0, 0.5, and 1, denoting copper metal, Cu2O, or CuO. From differential scanning calorimetry, it was determined that the addition of palladium causes an increase in the solidus and liquidus temperatures ofmore » the resulting Pd-Ag-CuO brazes. In general, the liquidus was found to increase by approximately 220°C for the (100-y)(25Pd - 75Ag) - (z)CuOx filler metal compositions relative to comparable Ag-CuOx alloys. Likewise, the solidus was found to increase for these alloys, respectively by 185°C and 60°C, respectively for CuOx contents of y = 0 - 1mol% and 4 - 10 mol%. For the (100-y)(50Pd - 50Ag) - (y)CuOx alloys, the solidus increased between 280 - 390°C over a copper oxide compositional range of x = 0 to 8 mol%. It was determined from sessile drop experiments conducted on alumina substrates that in all cases the palladium causes an increase in the wetting angle relative to the corresponding binary braze. Alloy compositions of (100-y)(25Pd - 75Ag) - (y)CuOx displayed increased wetting angles of 5-20° relative to comparable binary compositions. (100-y)(50Pd - 50Ag) - (y)CuOx alloys exhibited an increase in contact angle of 10-60° and compositions containing less than 10 mol% CuOx were not able to wet the substrate. Scanning electron microscopy indicated that the microstructure of the braze consists of discrete CuOx precipitates in an alloyed silver-palladium matrix. In both the binary and ternary filler metal formulations, a reaction layer consisting of CuAlO2 was observed along the interface with the alumina substrate. This reaction product appears to be beneficial in promoting wetting by the remaining braze filler metal. However the formation of this layer is hindered as the concentration of palladium in the filler metal is increased, which appears to be the primary cause of poor wettability in these compositions, as indicated by the substantial amount of porosity found along the braze/substrate interface.« less

Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Greene, Brian Joseph

Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525°C, and crystallized at temperatures near 570°C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5--2 mum) and/or heavy P doping (10 19--1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This dissertation discusses the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ≤ 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility are described.

Squid-based CW NMR system for measuring the magnetization of helium-3 films

NASA Astrophysics Data System (ADS)

White, Kevin Spencer

This thesis describes the design and construction of a SQUID-based CW NMR system together with its application in a study of the two dimensional magnetism of 3He. 3He provides an exemplary system for the study of two-dimensional magnetism. Two-dimensional 3He films of varying coverages may be formed by plating 3He on relatively uniform two-dimensional substrates, such as GTA Grafoil and ZYX graphite substrates. At coverages above approximately 20 atoms/nm. 2 on these substrates, the second layer of 3He exhibits a strong ferromagnetic ordering tendency. The ferromagnetic ordering presents as a rapid onset of measured magnetization that becomes independent of the applied magnetic field as film temperatures approach 1 mK. Very low applied magnetic fields are used to probe the ferromagnetic ordering in order to minimize masking of the measured magnetization and to stay within the available bandwidth of the SQUID. Commensurate with the ferromagnetic ordering, the NMR linewidth increases dramatically at these coverages and temperatures. An increasing linewidth equates to a short decay time with respect to pulsed NMR probing of the two-dimensional 3He magnetization. The decay times at these coverages and temperatures become so short that they fall below the minimum recovery time necessary for a SQUID-based pulsed NMR system to recover from the relatively large tipping pulse and acquire meaningful data. To address this problem, we have designed a SQUID-based CW NMR system to leverage as much of an already-existing pulsed NMR system as possible but allow accurate measurement of the rapid onset of ferromagnetic ordering of the 3He films below the approximate 1 mK temperature limit of the pulsed NMR system.

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

2015-03-01

We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.

Glasses and Liquids Low on the Energy Landscape Prepared by Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Dalal, Shakeel; Fakhraai, Zahra; Ediger, Mark

2014-03-01

The lower portions of the potential energy landscape for glass-forming materials such as polymers and small molecules were historically inaccessible by experiments. Physical vapor deposition is uniquely able to prepare materials in this portion of the energy landscape, with the properties of the deposited material primarily modulated by the substrate temperature. Here we report on high-throughput experiments which utilize a temperature gradient stage to enable rapid screening of vapor-deposited organic glasses. Using ellipsometry, we characterize a 100 K range of substrate temperatures in a single experiment, allowing us to rapidly determine the density, kinetic stability, fictive temperature and molecular orientation of these glasses. Their properties fall into three temperature regimes. At substrate temperatures as low as 0.97Tg, we prepare materials which are equivalent to the supercooled liquid produced by cooling the melt. Below 0.9Tg (1.16TK) the properties of materials are kinetically controlled and highly tunable. At intermediate substrate temperatures we are able to produce materials whose bulk properties match those expected for the equilibrium supercooled liquid, down to 1.16TK, but are structurally anisotropic.

Titanium disilicide formation by sputtering of titanium on heated silicon substrate

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.

1984-09-01

We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integrated

Strong metal support interaction of Pt on TiO2 grown by atomic layer deposition and physical vapor deposition for fuel cell applications

NASA Astrophysics Data System (ADS)

Hansen, Robin Paul

Several roadblocks prevent the large-scale commercialization of hydrogen fuel cells, including the stability of the Pt catalysts and their substrates, as well as the high cost of Pt. This is particularly true for the cathode, which requires a higher Pt loading because of the slow kinetics of the oxygen reduction reaction (ORR). The problem with the stability of the substrate can be solved by replacing the traditional carbon support with a conductive metal oxide such as reduced TiO2, which will not easily corrode and should result in longer lasting fuel cells. In this study, Pt was deposited either by atomic layer deposition (ALD) or physical vapor deposition (PVD). The typical size of the Pt islands that were grown using these deposition techniques was 3-8 nm. One factor that can inhibit the catalytic activity of a metal catalyst on a metal oxide is the strong metal support interaction (SMSI). This is where a metal on a reducible metal oxide can be encapsulated by a layer of the metal oxide support material at elevated temperatures. The processing of materials through atomic layer deposition can exceed this temperature. The TiO2 substrates used in this study were either grown by ALD, which results in a polycrystalline anatase film, or were single-crystal rutile TiO2(110) samples prepared in ultra-high vacuum (UHV). The Pt/TiO2 samples were tested electrochemically using cyclic voltammetry (CV) to determine the level of catalytic activity. To determine the effect of the SMSI interaction on the catalytic activity of the PVD grown samples, CV was performed on samples that were annealed in high vacuum after Pt deposition. Additional characterization was performed with scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), and four point probe analysis. Platinum that was deposited by PVD was used as a standard since it is not affected by the SMSI at the low temperature of the substrate during deposition. These samples were analyzed after deposition and then annealed to higher temperatures to induce the SMSI effect. The AR-XPS results for the single crystal TiO2 substrate show that there is an increase in the Ti emission at glancing exit angle after an anneal at 150 °C, which indicates the onset of the SMSI. For the ALD TiO2 substrate, the onset of SMSI was at 380 °C. This work is believed to be the first time in which the SMSI was observed in this fashion. The CV data for the samples with PVD Pt the single crystal TiO2 substrate showed a large reduction of the hydrogen adsortion at 380 °C. For the ORR, there was a reduction in the ORR signal at 380 °C. By 750 °C, the ORR was almost completely suppressed. For the PVD Pt grown on the ALD TiO2 substrates, there was a large increase in the resistivity of the samples after exposure to the acidic electrolyte used during the CV measurements. This resulted in no CV signal for those samples. Another aspect that was significantly different for the two different substrates was the Pt growth morphology. Both the AR-XPS and SEM measurements indicate that the Pt on the single crystal TiO2 substrates grows as distinct islands. For the ALD TiO2 substrates, the Pt islands had a lower profile than the islands grown on the single crystal substrates. This morphology difference is believed to be due to the large defect density of the ALD generated TiO2 or possibly from the different chemical properties of the anatase surface. These results indicate that the ALD generated substrates are more resistant to the effects of the SMSI, but that the ALD substrates are more sensitive to surface contamination.

Temperature distribution around thin electroconductive layers created on composite textile substrates

NASA Astrophysics Data System (ADS)

Korzeniewska, Ewa; Szczesny, Artur; Krawczyk, Andrzej; Murawski, Piotr; Mróz, Józef; Seme, Sebastian

2018-03-01

In this paper, the authors describe the distribution of temperatures around electroconductive pathways created by a physical vacuum deposition process on flexible textile substrates used in elastic electronics and textronics. Cordura material was chosen as the substrate. Silver with 99.99% purity was used as the deposited metal. This research was based on thermographic photographs of the produced samples. Analysis of the temperature field around the electroconductive layer was carried out using Image ThermaBase EU software. The analysis of the temperature distribution highlights the software's usefulness in determining the homogeneity of the created metal layer. Higher local temperatures and non-uniform distributions at the same time can negatively influence the work of the textronic system.

Nanostructured Coatings with Self-Healing and Temperature Homogenization Functions for High Temperature Sliding Interfaces

DTIC Science & Technology

2010-10-01

showing the stainless steel chamber (A), the rotatable substrate holder (B), the plasma burning between substrate holder and magnetrons (C) and three...Final Report University of Leoben, Austria 3 The sputtering system consists of a cylindrical stainless steel chamber (Ø 380 x 235mm) (A) which...are used. All coatings were deposited on three different substrates: AlSI M2 high speed steel , Si (100) wafers, and Fe foil. M2 substrates which

Active-site copper reduction promotes substrate binding of fungal lytic polysaccharide monooxygenase and reduces stability.

PubMed

Kracher, Daniel; Andlar, Martina; Furtmüller, Paul G; Ludwig, Roland

2018-02-02

Lytic polysaccharide monooxygenases (LPMOs) are a class of copper-containing enzymes that oxidatively degrade insoluble plant polysaccharides and soluble oligosaccharides. Upon reductive activation, they cleave the substrate and promote biomass degradation by hydrolytic enzymes. In this study, we employed LPMO9C from Neurospora crassa , which is active toward cellulose and soluble β-glucans, to study the enzyme-substrate interaction and thermal stability. Binding studies showed that the reduction of the mononuclear active-site copper by ascorbic acid increased the affinity and the maximum binding capacity of LPMO for cellulose. The reduced redox state of the active-site copper and not the subsequent formation of the activated oxygen species increased the affinity toward cellulose. The lower affinity of oxidized LPMO could support its desorption after catalysis and allow hydrolases to access the cleavage site. It also suggests that the copper reduction is not necessarily performed in the substrate-bound state of LPMO. Differential scanning fluorimetry showed a stabilizing effect of the substrates cellulose and xyloglucan on the apparent transition midpoint temperature of the reduced, catalytically active enzyme. Oxidative auto-inactivation and destabilization were observed in the absence of a suitable substrate. Our data reveal the determinants of LPMO stability under turnover and non-turnover conditions and indicate that the reduction of the active-site copper initiates substrate binding. © 2018 by The American Society for Biochemistry and Molecular Biology, Inc.

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, K.C.; Kodas, T.T.

1994-01-11

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Hydrogen isotope fractionation during lipid biosynthesis by Haloarcula marismortui

NASA Astrophysics Data System (ADS)

Dirghangi, Sitindra S.; Pagani, Mark

2013-10-01

We studied the controls on the fractionation of hydrogen isotopes during lipid biosynthesis by Haloarcula marismortui, a halophilic archaea, in pure culture experiments by varying organic substrate, the hydrogen isotope composition (D/H) of water, temperature, and salinity. Cultures were grown on three substrates: succinate, pyruvate and glycerol with known hydrogen isotope compositions, and in water with different hydrogen isotopic compositions. All culture series grown on a particular substrate show strong correlations between δDarchaeol and δDwater. However, correlations are distinctly different for cultures grown on different substrates. Our results indicate that the metabolic pathway of substrate exerts a fundamental influence on the δD value of lipids, likely by influencing the D/H composition of NADPH (nicotinamide adenine dinucleotide phosphate), the reducing agent that contributes hydrogen to carbon atoms during lipid biosynthesis. Temperature and salinity have smaller, but similar effects on δDlipid, primarily due to the way temperature and salinity influence growth rate, as well as temperature effects on the activity of enzymes.

Limited role for thermal erosion by turbulent lava in proximal Athabasca Valles, Mars

PubMed Central

Cataldo, Vincenzo; Williams, David A.; Dundas, Colin M.; Keszthelyi, Laszlo P.

2017-01-01

The Athabasca Valles flood lava is among the most recent (<50 Ma) and best preserved effusive lava flows on Mars and was probably emplaced turbulently. The Williams et al. [2005] model of thermal erosion by lava has been applied to what we term “proximal Athabasca,” the 75 km long upstream portion of Athabasca Valles. For emplacement volumes of 5000 and 7500 km3 and average flow thicknesses of 20 and 30 m, the duration of the eruption varies between ~11 and ~37 days. The erosion of the lava flow substrate is investigated for three eruption temperatures (1270°C, 1260°C, and 1250°C), and volatile contents equivalent to 0–65 vol% bubbles. The largest erosion depths of ~3.8–7.5 m are at the lava source, for 20 m thick and bubble-free flows that erupted at their liquidus temperature (1270°C). A substrate containing 25 vol% ice leads to maximum erosion. A lava temperature 20°C below liquidus reduces erosion depths by a factor of ~2.2. If flow viscosity increases with increasing bubble content in the lava, the presence of 30–50 vol % bubbles leads to erosion depths lower than those relative to bubble-free lava by a factor of ~2.4. The presence of 25 vol % ice in the substrate increases erosion depths by a factor of 1.3. Nevertheless, modeled erosion depths, consistent with the emplacement volume and flow duration constraints, are far less than the depth of the channel (~35–100 m). We conclude that thermal erosion does not appear to have had a major role in excavating Athabasca Valles. PMID:29082120

Limited role for thermal erosion by turbulent lava in proximal Athabasca Valles, Mars

USGS Publications Warehouse

Cataldo, Vincenzo; Williams, David A.; Dundas, Colin M.; Kestay, Laszlo P.

2015-01-01

The Athabasca Valles flood lava is among the most recent (<50 Ma) and best preserved effusive lava flows on Mars and was probably emplaced turbulently. The Williams et al. (2005) model of thermal erosion by lava has been applied to what we term “proximal Athabasca,” the 75 km long upstream portion of Athabasca Valles. For emplacement volumes of 5000 and 7500 km3and average flow thicknesses of 20 and 30 m, the duration of the eruption varies between ~11 and ~37 days. The erosion of the lava flow substrate is investigated for three eruption temperatures (1270°C, 1260°C, and 1250°C), and volatile contents equivalent to 0–65 vol % bubbles. The largest erosion depths of ~3.8–7.5 m are at the lava source, for 20 m thick and bubble-free flows that erupted at their liquidus temperature (1270°C). A substrate containing 25 vol % ice leads to maximum erosion. A lava temperature 20°C below liquidus reduces erosion depths by a factor of ~2.2. If flow viscosity increases with increasing bubble content in the lava, the presence of 30–50 vol % bubbles leads to erosion depths lower than those relative to bubble-free lava by a factor of ~2.4. The presence of 25 vol % ice in the substrate increases erosion depths by a factor of 1.3. Nevertheless, modeled erosion depths, consistent with the emplacement volume and flow duration constraints, are far less than the depth of the channel (~35–100 m). We conclude that thermal erosion does not appear to have had a major role in excavating Athabasca Valles.

Cyclic Thermal Stress-Induced Degradation of Cu Metallization on Si3N4 Substrate at -40°C to 300°C

NASA Astrophysics Data System (ADS)

Lang, Fengqun; Yamaguchi, Hiroshi; Nakagawa, Hiroshi; Sato, Hiroshi

2015-01-01

The high-temperature reliability of active metal brazed copper (AMC) on Si3N4 ceramic substrates used for fabricating SiC high-temperature power modules was investigated under harsh environments. The AMC substrate underwent isothermal storage at 300°C for up to 3000 h and a thermal cycling test at -40°C to 300°C for up to 3000 cycles. During isothermal storage at 300°C, the AMC substrate exhibited high reliability, characterized by very little deformation of the copper (Cu) layer, low crack growth, and low oxidation rate of the Cu layer. Under thermal cycling conditions at -40°C to 300°C, no detachment of the Cu layer was observed even after the maximum 3000 cycles of the experiment. However, serious deformation of the Cu layer occurred and progressed as the number of thermal cycles increased, thus significantly roughening the surface of the Cu metallized layer. The cyclic thermal stress led to a significant increase in the crack growth and oxidation of the Cu layer. The maximum depth of the copper oxides reached up to 5/6 of the Cu thickness. The deformation of the Cu layer was the main cause of the decrease of the bond strength under thermal cycling conditions. The shear strength of the SiC chips bonded on the AMC substrate with a Au-12 wt.%Ge solder decreased from the original 83 MPa to 14 MPa after 3000 cycles. Therefore, the cyclic thermal stress destroyed the Cu oxides and enhanced the oxidation of the Cu layer.

Annealing temperature dependence of magnetoimpedance effect in electrodeposited [Ni80fe20/Cu]3 multilayers

NASA Astrophysics Data System (ADS)

Maulana, Frendi; Eko Prastyo, W.; Nuryani; Purnama, B.

2017-11-01

We have conducted an experiment of magnetoimpedance with a variation of annealing temperature of [Ni80Fe20/Cu)]3 multilayers. The multilayer is electrodeposited on Cu-PCB substrate. Magnetoimpedance effect is impedance measure on account of external magnetic field. The found MI (magnetoimpedance) ratio is 7,63 % (without annealing) and 4,75 % (using annealing) of 100 ºC. We find that MI ratio depends on to annealing temperature and current frequence. MI ratio decreases due to rising temperature and identified increase due to the frequency. The highest MI ratio is on a sample without annealing temperature and measurement at 100 kHz frequence.

Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobanska, M., E-mail: sobanska@ifpan.edu.pl; Zytkiewicz, Z. R.; Klosek, K.

Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al{sub x}O{sub y} buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-Al{sub x}O{sub y} are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 °C, which allowed determination of nucleation energy of the NWs on a-Al{sub x}O{sub y} equal to 6 eV. Thismore » value is smaller than 10.2 eV we found under the same conditions on nitridized Si(111) substrates. Optical properties of GaN NWs on a-Al{sub x}O{sub y} are analyzed as a function of the growth temperature and compared with those on Si(111) substrates. A significant increase of photoluminescence intensity and much longer PL decay times, close to those on silicon substrates, are found for NWs grown at the highest temperature proving their high quality. The samples grown at high temperature have very narrow PL lines. This allowed observation that positions of donor-bound exciton PL line in the NWs grown on a-Al{sub x}O{sub y} are regularly lower than in samples grown directly on silicon suggesting that oxygen, instead of silicon, is the dominant donor. Moreover, PL spectra suggest that total concentration of donors in GaN NWs grown on a-Al{sub x}O{sub y} is lower than in those grown under similar conditions on bare Si. This shows that the a-Al{sub x}O{sub y} buffer efficiently acts as a barrier preventing uptake of silicon from the substrate to GaN.« less

Holocene Substrate Influences on Plant and Fire Response to Climate Change

NASA Astrophysics Data System (ADS)

Briles, C.; Whitlock, C. L.

2011-12-01

The role of substrates in facilitating plant responses to climate change in the past has received little attention. Ecological studies, documenting the relative role of fertile and infertile substrates in mediating the effects of climate change, lack the temporal information that paleoecological lake studies provide on how plants have responded under equal, larger and more rapid past climate events than today. In this paper, pollen and macroscopic charcoal preserved in the sediments of eight lakes surrounded by infertile ultramafic soils and more fertile soils in the Klamath Mountains of northern California were analyzed. Comparison of late-Quaternary paleoecological sites suggests that infertile and fertile substrates supported distinctly different plant communities. Trees and shrubs on infertile substrates were less responsive to climate change than those on fertile substrates, with the only major compositional change occurring at the glacial/interglacial transition (~11.5ka), when temperature rose 5oC. Trees and shrubs on fertile substrates were more responsive to climate changes, and tracked climate by moving along elevational gradients, including during more recent climate events such as the Little Ice Age and Medieval Climate Anomaly. Fire regimes were similar until 4ka on both substrate types. After 4ka, understory fuels on infertile substrates became sparse and fire activity decreased, while on fertile substrates forests became increasingly denser and fire activity increased. The complacency of plant communities on infertile sites to climate change contrasts with the individualistic and rapid adjustments of species on fertile sites. The findings differ from observations on shorter time scales that show the most change in herb cover and richness in the last 60 years on infertile substrates. Thus, the paleorecord provides unique long-term ecological data necessary to evaluate the response of plants to future climate change under different levels of soil fertility.

Regional variation in the temperature sensitivity of soil organic matter decomposition in China's forests and grasslands

NASA Astrophysics Data System (ADS)

Liu, Yuan; He, Nianpeng

2017-04-01

How to assess the temperature sensitivity (Q10) of soil organic matter (SOM) decomposition and its regional variation with high accuracy is one of the largest uncertainties in determining the intensity and direction of the global carbon (C) cycle in response to climate change. In this study, we collected a series of soils from 22 forest sites and 30 grassland sites across China to explore regional variation in Q10 and its underlying mechanisms. We conducted a novel incubation experiment with periodically changing temperature (5-30 °C), while continuously measuring soil microbial respiration rates. The results showed that Q10 varied significantly across different ecosystems, ranging from 1.16 to 3.19 (mean 1.63). Q10 was ordered as follows: alpine grasslands (2.01) > temperate grasslands (1.81) > tropical forests (1.59) > temperate forests (1.55) > subtropical forests (1.52). The Q10 of grasslands (1.90) was significantly higher than that of forests (1.54). Furthermore, Q10 significantly increased with increasing altitude and decreased with increasing longitude. Environmental variables and substrate properties together explained 52% of total variation in Q10 across all sites. Overall, pH and soil electrical conductivity primarily explained spatial variation in Q10. The general negative relationships between Q10 and substrate quality among all ecosystem types supported the C quality temperature (CQT) hypothesis at a large scale, which indicated that soils with low quality should have higher temperature sensitivity. Furthermore, alpine grasslands, which had the highest Q10, were predicted to be more sensitive to climate change under the scenario of global warming.

Regional Variation in the Temperature Sensitivity of Soil Organic Matter Decomposition in China's Forests and Grasslands

NASA Astrophysics Data System (ADS)

Liu, Y.; He, N.; Zhu, J.; Yu, G.; Xu, L.; Niu, S.; Sun, X.; Wen, X.

2017-12-01

How to assess the temperature sensitivity (Q10) of soil organic matter (SOM) decomposition and its regional variation with high accuracy is one of the largest uncertainties in determining the intensity and direction of the global carbon (C) cycle in response to climate change. In this study, we collected a series of soils from 22 forest sites and 30 grassland sites across China to explore regional variation in Q10 and its underlying mechanisms. We conducted a novel incubation experiment with periodically changing temperature (5-30 °C), while continuously measuring soil microbial respiration rates. The results showed that Q10 varied significantly across different ecosystems, ranging from 1.16 to 3.19 (mean 1.63). Q10 was ordered as follows: alpine grasslands (2.01) > temperate grasslands (1.81) > tropical forests (1.59) > temperate forests (1.55) > subtropical forests (1.52). The Q10 of grasslands (1.90) was significantly higher than that of forests (1.54). Furthermore, Q10 significantly increased with increasing altitude and decreased with increasing longitude. Environmental variables and substrate properties together explained 52% of total variation in Q10 across all sites. Overall, pH and soil electrical conductivity primarily explained spatial variation in Q10. The general negative relationships between Q10 and substrate quality among all ecosystem types supported the C quality temperature (CQT) hypothesis at a large scale, which indicated that soils with low quality should have higher temperature sensitivity. Furthermore, alpine grasslands, which had the highest Q10, were predicted to be more sensitive to climate change under the scenario of global warming.

Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

NASA Astrophysics Data System (ADS)

Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

2018-05-01

Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

Surface modification of several dental substrates by non-thermal, atmospheric plasma brush.

PubMed

Chen, Mingsheng; Zhang, Ying; Sky Driver, M; Caruso, Anthony N; Yu, Qingsong; Wang, Yong

2013-08-01

The purpose of this study was to reveal the effectiveness of non-thermal atmospheric plasma brush in surface wettability and modification of four dental substrates. Specimens of dental substrates including dentin, enamel, and two composites Filtek Z250, Filtek LS Silorane were prepared (∼2mm thick, ∼10mm diameter). The prepared surfaces were treated for 5-45s with a non-thermal atmospheric plasma brush working at temperatures from 36 to 38°C. The plasma-treatment effects on these surfaces were studied with contact-angle measurement, X-ray photoemission spectroscopy (XPS) and scanning electron microscopy (SEM). The non-thermal atmospheric argon plasma brush was very efficient in improving the surface hydrophilicity of four substrates studied. The results indicated that water contact angle values decreased considerably after only 5s plasma treatment of all these substrates. After 30s treatment, the values were further reduced to <5°, which was close to a value for super hydrophilic surfaces. XPS analysis indicated that the percent of elements associated with mineral in dentin/enamel or fillers in the composites increased. In addition, the percent of carbon (%C) decreased while %O increased for all four substrates. As a result, the O/C ratio increased dramatically, suggesting that new oxygen-containing polar moieties were formed on the surfaces after plasma treatment. SEM surface images indicated that no significant morphology change was induced on these dental substrates after exposure to plasmas. Without affecting the bulk properties, a super-hydrophilic surface could be easily achieved by the plasma brush treatment regardless of original hydrophilicity/hydrophobicity of dental substrates tested. Copyright © 2013 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Surface modification of several dental substrates by non-thermal, atmospheric plasma brush

PubMed Central

Chen, Mingsheng; Zhang, Ying; Driver, M. Sky; Caruso, Anthony N.; Yu, Qingsong; Wang, Yong

2013-01-01

Objective The purpose of this study was to reveal the effectiveness of non-thermal atmospheric plasma brush in surface wettability and modification of four dental substrates. Methods Specimens of dental substrates including dentin, enamel, and two composites Filtek Z250, Filtek LS Silorane were prepared (~2 mm thick, ~10 mm diameter). The prepared surfaces were treated for 5–45 s with a non-thermal atmospheric plasma brush working at temperatures from 36 to 38 °C. The plasma-treatment effects on these surfaces were studied with contact-angle measurement, X-ray photoemission spectroscopy (XPS) and scanning electron microscopy (SEM). Results The non-thermal atmospheric argon plasma brush was very efficient in improving the surface hydrophilicity of four substrates studied. The results indicated that water contact angle values decreased considerably after only 5 s plasma treatment of all these substrates. After 30 s treatment, the values were further reduced to <5°, which was close to a value for super hydrophilic surfaces. XPS analysis indicated that the percent of elements associated with mineral in dentin/enamel or fillers in the composites increased. In addition, the percent of carbon (%C) decreased while %O increased for all four substrates. As a result, the O/C ratio increased dramatically, suggesting that new oxygen-containing polar moieties were formed on the surfaces after plasma treatment. SEM surface images indicated that no significant morphology change was induced on these dental substrates after exposure to plasmas. Significance Without affecting the bulk properties, a super-hydrophilic surface could be easily achieved by the plasma brush treatment regardless of original hydrophilicity/hydrophobicity of dental substrates tested. PMID:23755823

Low-pressure large-area magnetron sputter deposition of YBa2Cu3O7-δ films for industrial applications

NASA Astrophysics Data System (ADS)

Wördenweber, Roger; Hollmann, Eugen; Poltiasev, Michael; Neumüller, Heinz-Werner

2003-05-01

This paper addresses the development of a technically relevant sputter-deposition process for YBa2Cu3O7-delta films. First, the simulation of the particle transport from target to substrate indicates that only at a reduced pressure of p approx 1-10 Pa can a sufficiently large deposition rate and homogeneous stoichiometric distribution of the particles during large-area deposition be expected. The results of the simulations are generally confirmed by deposition experiments on CeO2 buffered sapphire and LaAlO3 substrates using a magnetron sputtering system suitable for large-area deposition. However, it is shown that in addition to the effect of scattering during particle transport, the conditions at the substrate lead to a selective growth of Y-Ba-Cu-O phases that, among others, strongly affect the growth rate. For example, the growth rate is more than three times larger for optimized parameters compared to the same set of parameters but at 100 K lower substrate temperature. Stoichiometrical and structural perfect films can be grown at low pressure (p < 10 Pa). However, the superconducting transition temperature of these films is reduced. The Tc reduction seems to be correlated with the c-axis length of YBa2Cu3O7-delta. Two possible explanations for the increased c-axis length and the correlated reduced transition temperature are discussed, i.e. reduced oxygen content and strong cation site disorder due to the heavy particle bombardment.

Correlating thermoelectric properties with microstructure in Bi 0.8 Sb 0.2 thin films

DOE PAGES

Siegal, M. P.; Lima-Sharma, A. L.; Sharma, P. A.; ...

2017-04-03

The room temperature electronic transport properties of 100 nm-thick thermoelectric Bi 0.8Sb 0.2 films, sputter-deposited onto quartz substrates and post-annealed in an ex-situ furnace, systematically correlate with the overall microstructural quality, improving with increasing annealing temperature until close to the melting point for the alloy composition. Furthermore, the optimized films have high crystalline quality with ~99% of the grains oriented with the trigonal axis perpendicular to the substrate surface. Film resistivities and Seebeck coefficients are accurately measured by preventing deleterious surface oxide formation via a SiN capping layer and using Nd-doped Al for contacts. Our resulting values are similar tomore » single crystals and significantly better than previous reports from films and polycrystalline bulk alloys.« less

Dynamic Model for Life History of Scyphozoa

PubMed Central

Xie, Congbo; Fan, Meng; Wang, Xin; Chen, Ming

2015-01-01

A two-state life history model governed by ODEs is formulated to elucidate the population dynamics of jellyfish and to illuminate the triggering mechanism of its blooms. The polyp-medusa model admits trichotomous global dynamic scenarios: extinction, polyps survival only, and both survival. The population dynamics sensitively depend on several biotic and abiotic limiting factors such as substrate, temperature, and predation. The combination of temperature increase, substrate expansion, and predator diminishment acts synergistically to create a habitat that is more favorable for jellyfishes. Reducing artificial marine constructions, aiding predator populations, and directly controlling the jellyfish population would help to manage the jellyfish blooms. The theoretical analyses and numerical experiments yield several insights into the nature underlying the model and shed some new light on the general control strategy for jellyfish. PMID:26114642

Dynamic Model for Life History of Scyphozoa.

PubMed

Xie, Congbo; Fan, Meng; Wang, Xin; Chen, Ming

2015-01-01

A two-state life history model governed by ODEs is formulated to elucidate the population dynamics of jellyfish and to illuminate the triggering mechanism of its blooms. The polyp-medusa model admits trichotomous global dynamic scenarios: extinction, polyps survival only, and both survival. The population dynamics sensitively depend on several biotic and abiotic limiting factors such as substrate, temperature, and predation. The combination of temperature increase, substrate expansion, and predator diminishment acts synergistically to create a habitat that is more favorable for jellyfishes. Reducing artificial marine constructions, aiding predator populations, and directly controlling the jellyfish population would help to manage the jellyfish blooms. The theoretical analyses and numerical experiments yield several insights into the nature underlying the model and shed some new light on the general control strategy for jellyfish.

Elevation, Substrate, & Climate effects on Alpine & Sub-Alpine Plant Distribution in California & Nevada's High Mountains: Preliminary Data from the California and Nevada GLORIA Project

NASA Astrophysics Data System (ADS)

Barber, A.; Millar, C.

2014-12-01

Documenting plant response to global climate change in sensitive zones, such as the alpine, is a major goal for global change biology. Basic information on alpine plant distribution by elevation and substrate provides a basis for anticipating which species may decline in a warming climate. The Global Observation Research Initiative in Alpine Environments (GLORIA) is a worldwide effort to document vegetation changes over time in alpine settings using permanent multi-summit plots. The California/Nevada group currently monitors seven permanent GLORIA target regions, composed of 29 summits in alpine and subalpine zones. Summits range in elevations from 2918m to 4325m on substrates including dolomite, granite, quartzite, and volcanics. High-resolution plant occurrence and cover data from the upper 10 meters of each summit are presented. Plants from our target regions can be divided into three groups: summit specialists found only on the highest peaks, alpine species found predominantly within the alpine zone, and broadly distributed species found in the alpine zone and below. Rock substrate and microsite soil development have a strong influence on plant communities and species richness. We present the first set of five-year resurvey and temperature data from 18 summits. We have documented some annual variation in species presence/absence at almost all sites, but no dramatic changes in total diversity. Consistent with the expectation of rising global temperatures, our soil temperature loggers have documented temperature increases at most of our sites. These data are a baseline for assessing bioclimatic shifts and future plant composition in California and Nevada's alpine zone.

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Temperature, inocula and substrate: Contrasting electroactive consortia, diversity and performance in microbial fuel cells.

PubMed

Heidrich, E S; Dolfing, J; Wade, M J; Sloan, W T; Quince, C; Curtis, T P

2018-02-01

The factors that affect microbial community assembly and its effects on the performance of bioelectrochemical systems are poorly understood. Sixteen microbial fuel cell (MFC) reactors were set up to test the importance of inoculum, temperature and substrate: Arctic soil versus wastewater as inoculum; warm (26.5°C) versus cold (7.5°C) temperature; and acetate versus wastewater as substrate. Substrate was the dominant factor in determining performance and diversity: unexpectedly the simple electrogenic substrate delivered a higher diversity than a complex wastewater. Furthermore, in acetate fed reactors, diversity did not correlate with performance, yet in wastewater fed ones it did, with greater diversity sustaining higher power densities and coulombic efficiencies. Temperature had only a minor effect on power density, (Q 10 : 2 and 1.2 for acetate and wastewater respectively): this is surprising given the well-known temperature sensitivity of anaerobic bioreactors. Reactors were able to operate at low temperature with real wastewater without the need for specialised inocula; it is speculated that MFC biofilms may have a self-heating effect. Importantly, the warm acetate fed reactors in this study did not act as direct model for cold wastewater fed systems. Application of this technology will encompass use of real wastewater at ambient temperatures. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Temperature dependent droplet impact dynamics on flat and textured surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azar Alizadeh; Vaibhav Bahadur; Sheng Zhong

Droplet impact dynamics determines the performance of surfaces used in many applications such as anti-icing, condensation, boiling and heat transfer. We study impact dynamics of water droplets on surfaces with chemistry/texture ranging from hydrophilic to superhydrophobic and across a temperature range spanning below freezing to near boiling conditions. Droplet retraction shows very strong temperature dependence especially for hydrophilic surfaces; it is seen that lower substrate temperatures lead to lesser retraction. Physics-based analyses show that the increased viscosity associated with lower temperatures can explain the decreased retraction. The present findings serve to guide further studies of dynamic fluid-structure interaction at variousmore » temperatures.« less

Cellulase stability, adsorption/desorption profiles and recycling during successive cycles of hydrolysis and fermentation of wheat straw.

PubMed

Rodrigues, Ana Cristina; Felby, Claus; Gama, Miguel

2014-03-01

The potential of enzymes recycling after hydrolysis and fermentation of wheat straw under a variety of conditions was investigated, monitoring the activity of the enzymes in the solid and liquid fractions, using low molecular weight substrates. A significant amount of active enzymes could be recovered by recycling the liquid phase. In the early stage of the process, enzyme adsorb to the substrate, then gradually returning to the solution as the saccharification proceeds. At 50°C, normally regarded as an acceptable operational temperature for saccharification, the enzymes (Celluclast) significantly undergo thermal deactivation. The hydrolysis yield and enzyme recycling efficiency in consecutive recycling rounds can be increased by using high enzyme loadings and moderate temperatures. Indeed, the amount of enzymes in the liquid phase increased with its thermostability and hydrolytic efficiency. This study contributes towards developing effective enzymes recycling strategies and helping to reduce the enzyme costs on bioethanol production. Copyright © 2014 Elsevier Ltd. All rights reserved.

Effect of sputtering condition and heat treatment in Co/Cu/Co/FeMn spin valve

NASA Astrophysics Data System (ADS)

Kim, Hong Jin; Bae, Jun Soo; Lee, Taek Dong; Lee, Hyuck Mo

2002-03-01

The exchange field of Cu(50 Å)/FeMn(50 Å)/Co(50 Å) sputtered on Si substrate was studied in terms of surface roughness and phase formation of γ-FeMn under a variety of Ar pressures and powers in sputtering. It was found that the exchange field is stronger when the surface is smoother and the FeMn layer forms better. The exchange bias field increased by more than three times after heat treatment. The effect of heat treament on magnetoresistance (MR) and resistance of the top spin valve, substrate/Co(30 Å)/Cu(30 Å)/Co(30 Å)/FeMn(150 Å), was studied. It was observed that the MR started to increase with annealing temperature and the effect was significant at 150°C. The heat treatment led to the disappearance of the intermixed layer between Co and Cu, and the concentration profile of Cu became flat and smooth at this temperature.

Group III-nitride thin films grown using MBE and bismuth

DOEpatents

Kisielowski, Christian K.; Rubin, Michael

2002-01-01

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Group III-nitride thin films grown using MBE and bismuth

DOEpatents

Kisielowski, Christian K.; Rubin, Michael

2000-01-01

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Growth characteristics of (100)HgCdTe layers in low-temperature MOVPE with ditertiarybutyltelluride

NASA Astrophysics Data System (ADS)

Yasuda, K.; Hatano, H.; Ferid, T.; Minamide, M.; Maejima, T.; Kawamoto, K.

1996-09-01

Low-temperature growth of (100)HgCdTe (MCT) layers in MOVPE has been studied using ditertiarybutyltelluride (DtBTe), dimethylcadmium (DMCd), and elementary mercury as precursors. MCT layers were grown at 275°C on (100)GaAs substrates. Growths were carried out in a vertical growth cell which has a narrow spacing between the substrate and cell ceiling. Using the growth cell, the Cd-composition ( x) of MCT layers was controlled over a wide range from 0 to 0.98 by the DMCd flow. The growth rate of the MCT layers was constant at 5 μm h -1 for the increased DMCd flow. Preferential Cd-incorporation into MCT layers and an increase of the growth rate were observed in the presence of mercury vapor. The growth characteristics were considered to be due to the alkyl-exchange reaction between DMCd and mercury. The electrical properties and crystallinity of grown layers were also evaluated, which showed that layers with high quality can be grown at 275°C.

Field dependent surface resistance of niobium on copper cavities

NASA Astrophysics Data System (ADS)

Junginger, T.

2015-07-01

The surface resistance RS of superconducting cavities prepared by sputter coating a niobium film on a copper substrate increases significantly stronger with the applied rf field compared to cavities of bulk material. A possible cause is that the thermal boundary resistance between the copper substrate and the niobium film induces heating of the inner cavity wall, resulting in a higher RS. Introducing helium gas in the cavity, and measuring its pressure as a function of applied field allowed to conclude that the inner surface of the cavity is heated up by less than 120 mK when RS increases with Eacc by 100 n Ω . This is more than one order of magnitude less than what one would expect from global heating. Additionally, the effects of cooldown speed and low temperature baking have been investigated in the framework of these experiments. It is shown that for the current state of the art niobium on copper cavities there is only a detrimental effect of low temperature baking. A fast cooldown results in a lowered RS.

Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2015-08-15

The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for themore » (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.« less

Yeast hexokinase. A fluorescence temperature-jump study of the kinetics of the binding of glucose to the monomer forms of hexokinases P-I and P-II.

PubMed

Hoggett, J G; Kellett, G L

1976-09-15

The binding of glucose to the monomeric forms of hexokinases P-I and P-II in Tris and phosphate buffers at pH 8.0 in the presence of 1 mol l-1 KCl has been studied using the fluorescence temperature-jump technique. For both isozymes only one relaxation time was observed; values of tau-1 increased linearly with increasing concentration of free reacting partners. The apparent second-order rate constant for association was about 2 X 10(6) 1 mol-1 s-1 for both isozymes; the differences in the stabilities of the complexes with P-I and P-II are entirely attributable to the fact that glucose dissociates more slowly from its complex with P-I than P-II (approximately 300 s-1 and 1100 s-1 respectively). Although the kinetic data are compatible with a single-step mechanism for glucose binding the association rate constant was much lower than that expected for a diffusion-limited rate of encounter. Other mechanisms for describing an induced-fit are discussed. It is shown that the data are incompatible with a slow 'prior-isomerization' pathway of substrate binding, but are consistent with a 'substrate-guided' pathway involving isomerization of the enzyme-substrate complex.

Thermally assisted interlayer magnetic coupling through Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3} barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carreira, Santiago J.; Steren, Laura B.; Consejo Nacional de Investigaciones Científicas y Técnicas, Ciudad Autonoma de Buenos Aires C1425FQB

2016-08-08

We report on the interlayer exchange coupling across insulating barriers observed on Ni{sub 80}Fe{sub 20}/Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3}/La{sub 0.66}Sr{sub 0.33}MnO{sub 3} (Py/BST{sub 0.05}/LSMO) trilayers. The coupling mechanism has been analyzed in terms of the barrier thickness, samples' substrate, and temperature. We examined the effect of MgO (MGO) and SrTiO{sub 3} (STO) (001) single-crystalline substrates on the magnetic coupling and also on the magnetic anisotropies of the samples in order to get a deeper understanding of the magnetism of the structures. We measured a weak coupling mediated by spin-dependent tunneling phenomena whose sign and strength depend on barrier thickness and substrate.more » An antiferromagnetic (AF) exchange prevails for most of the samples and smoothly increases with the barrier thicknesses as a consequence of the screening effects of the BST{sub 0.05}. The coupling monotonically increases with temperature in all the samples and this behavior is attributed to thermally assisted mechanisms. The magnetic anisotropy of both magnetic components has a cubic symmetry that in the case of permalloy is added to a small uniaxial component.« less

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

PubMed

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700°C deposition temperature range

NASA Astrophysics Data System (ADS)

El Khakani, My A.; Gat, E.; Beaudoin, Yves; Chaker, Mohamed; Monteil, C.; Guay, Daniel; Letourneau, G.; Pepin, Henri

1995-04-01

Laser ablation deposition technique was used to deposit silicon carbide thin films on both Si(100) and quartz substrates. The deposition was accomplished by ablating SiC sintered ceramic targets, using a KrF (248 nm) excimer laser. At a laser intensity of about 1 X 109 W/cm2, substrate temperatures in the (25-700) degree(s)C range were investigated. When the deposition temperature is varied from 27 to 650 degree(s)C, (i) the density of a-SiC films increases from 2.6 to 3.0 g cm-3, while their mean roughness value (for a film thickness of about 1 micrometers ) slightly changes from 0.44 to 0.5 nm; (ii) the optical transmission of a-SiC films is significantly improved (the absorption coefficient at 632.8 nm wavelength was reduced by a factor of about 5); and (iii) their Si-C bond density, as determined by FTIR spectroscopy, increases from (13.1 +/- 1.3) to (23.4 +/- 2.4) 1022 bond cm-3. The increased number of Si-C bonds is correlated to the increase of the optical transmission. Over all the investigated deposition temperature range, the a-SiC films were found to be under high compressive stress around a mean value of about 1.26 GPa. The control of the stress of a-SiC films was achieved by means of post- thermal annealings and the annealed a-SiC films were successfully used to fabricate x-ray membranes.

The magnetic transition temperature tuned by strain in YMn0.9Ru0.1O3 thin films

NASA Astrophysics Data System (ADS)

Yang, L. P.; Zhang, A. M.; Wang, K.; Wu, X. S.; Zhai, Z. Y.

2018-05-01

Epitaxial orthorhombic YMn0.9Ru0.1O3 films with different thickness have been grown on (001)-SrTiO3 substrates by pulsed laser deposition (PLD). The crystal structure is well investigated by X-ray Diffraction. It is found that the out-of-plane parameter c slowly increases with decreasing thickness of samples because of the tensile strain between the films and substrates along c axis. The lengths of in-plane Mn-O bonds expand with the enhancement of strains, which is proved by Raman scatting. The magnetic measurements reveal that there exist two magnetic transition temperatures TN1 and TN2. The TN1 is close to that of orthorhombic YMnO3 bulk. With decreasing thickness of the films, TN1 keeps almost constant because of the small stain along c-axis. TN2, however, obviously increases from 117 K to 134 K, which could be related to the expansion of in-plane Mn-O bonds. Results show that the magnetic transition temperature of YMn0.9Ru0.1O3 films can be sensitively manipulated by the strain of the films.

Effect of growth temperature and precursor concentration on synthesis of CVD-graphene from camphor

NASA Astrophysics Data System (ADS)

Rajaram, Narasimman; Patel, Biren; Ray, Abhijit; Mukhopadhyay, Indrajit

2018-05-01

Here, we have synthesized CVD-graphene from camphor by using atmospheric pressure (AP)-CVD system on Cu foil. We have studied the effect of growth temperature and camphor concentration by using scanning electron microscopy (SEM) and Raman spectroscopy. The domain size of the graphene is increasing with an increase in the temperature and camphor quantity. The complete coverage of graphene on the Cu foil achieved at 1020 °C. Higher camphor quantity leads to growth of multilayer graphene. The graphene is transferred by PMMA-assisted method onto the glass substrate. The sheet resistance and transmittance of the graphene are 1.5 kohm/sq and 92.7%, respectively.

Effects of Warming on the Fate of Carbon Across a Hawaiian Soil Mineralogical Gradient

NASA Astrophysics Data System (ADS)

Neupane, A.

2016-12-01

Earth's surface temperature in tropical region have increased over the last century. However, relatively few studies have focused on the interacting effects of warming and soil mineralogy on the fate of carbon (C) in tropical soils. This research uses soils from three montane forest sites and two grasslands along soil age gradients on basaltic lava flows in Hawaii. The age gradient provides a range in soil mineralogies and binding site densities. We hypothesized that warming would promote microbial respiration and losses of added C more in younger soils with lower binding site density, whereas warming would have less of an impact on C losses in older soils with more reactive minerals. Soils were collected from 0-25 cm depths and incubated in the lab at 16 °C (ambient temperature), 21°C, and 26 °C. New C in the form of 13C-labeled glucose and glycine were added to replicate soils to track the fate of C with warming across sites (n = 3). Carbon dioxide (CO2) fluxes was measured every 15 to 30 days for 8 months to assess changes in heterotrophic respiration, and 13C uptake in microbial biomass was measured after 4 days and 8 months. Among the forest sites, the youngest soils (Thurston, 300 years old), had the overall lowest respiration, an intermediate aged soil (Laupahoehoe, 20,000 years old) had the highest respiration, and there was intermediate respiration from the oldest soil (Kohala, 150,000 yrs). Both the grassland sites had lower respiration compared to the forest. Soils from all sites showed increase in respiration rate at warmer temperature. Contrary to expectations, Kohala soil showed largest increase in respiration upon warming while Thurston showed the smallest increase for the forest sites. The C substrates altered respiration differently over time. Preliminary microbial 13C data show significant uptake and retention of added substrates in microbial biomass during the first 4 days of the incubation, with significantly greater retention of added substrate in microbial biomass at 16 °C versus 21 oC. These results show that warming not only increases heterotrophic respiration of C, but also decreases microbial retention of simple C substrates. These results, together with analyses across the soil mineralogical gradient, will improve our understanding of how warming may affect C storage across tropical sites.

Superconducting articles of manufacture and method of producing same

DOEpatents

Newkirk, Lawrence R.; Valencia, Flavio A.

1980-01-01

Bulk coatings of Nb.sub.3 Ge with high superconducting transition temperatures bonded to metallic substrates and a chemical vapor deposition method for producing such coatings on metallic substrates are disclosed. In accordance with the method, a Nb.sub.3 Ge coating having a transition temperature in excess of 21.5 K may be tightly bonded to a copper substrate.

Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination

DOEpatents

Sopori, Bhushan L.

1993-01-01

Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.