Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

NASA Technical Reports Server (NTRS)

Radhakrishnan, G.; Mccullough, O.; Cser, J.; Katz, J.

1988-01-01

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Structural and electrical characteristics of CoGe(2) alloy films deposited heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, Kevin Edward

The partially ionized beam deposition system was utilized to deposit CoGesb2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. The CoGesb2 films were structurally characterized using conventional 2theta diffraction, reflection X-ray pole figure analysis, and alpha particle channeling techniques. Three distinct crystallographic relationships of the CoGesb2 films to the GaAs(100) substrates were observed, dependent upon the substrate temperature and Gesp+ ion energy used during deposition. The CoGesb2(001) (100)sp°GaAs(100) (001) orientation, which has the smallest lattice mismatch to GaAs(100), was found to occur for depositions performed at a substrate temperature during deposition near 280sp°C with approximately 1160 eV Gesp+ ions. Lowering the substrate temperature or reducing the Gesp+ ion energy results in CoGesb2(100) orientation domination with CoGe2(100) (010)sp°GaAs(100) (001) and CoGesb2(100) (001)sp°GaAs(100) (001). Substrate temperature alone was seen to produce only the CoGesb2(100) orientation. For CoGesb2(001) films, additional energy was required from Gesp+ ions in the evaporant stream. Angular yield profiles for axial Hesp{++} ion channeling yielded values for the minimum yield, Ysb{min}, of 25% for the CoGesb2(001) orientation and 34% for the CoGesb2(100) orientation. The critical angle for channeling, Psisb{c}, was measured to be 1.0sp° for both orientations. Channeling theory was used to predict the minimum yield and critical angle for each orientation. The theoretical values agreed qualitatively with the experimentally measured values, and the theory correctly predicted the lower minimum yield for the CoGesb2(001) orientation. Annealing the films to allow for epitaxial grain growth resulted in orientation selection of CoGesb2(001) at the expense of CoGesb2(100), exposing CoGesb2(100) as a metastable orientation. The CoGesb2(001) films were stable up to 500sp°C, 30 minute anneals, showing no orientation changes and enhanced thermal stability over the CoGesb2(100) films. Current-voltage measurements of CoGesb2 contacts deposited on n-type GaAs(100) were used to determine the electrical nature of the different CoGesb2 orientations. The CoGesb2 (001) (100)sp°GaAs (100) (001) heterostructure deposited at a substrate temperature of 280sp°C with 1160 eV Gesp+ ions was found to exhibit Ohmic behavior, while contacts deposited at lower or higher substrate temperatures displayed non-Ohmic behavior.

High-fluence ion implantation in silicon carbide for fabrication of a compliant substrate

NASA Astrophysics Data System (ADS)

Lioubtchenko, Mikhail

GaN and related nitrides are promising materials for applications as UV/blue light emitters and in high-power, high-temperature electonic devices. Unfortunately, the vast potential of these materials cannot be realized effectively due to a large density of threading dislocations, arising from large lattice mismatch between GaN and utilized substrates. Therefore, a new approach to the heteroepitaxial growth is desirable, and a compliant substrate might help to remedy the situation. A modified model for the compliant substrate consisting of the compliant membrane glued to a thick handling substrate by a soft layer was proposed. We have chosen 6H-SiC as a starting substrate and ion implantation as a means of creating a buried layer. High fluence ion implantation of different species in 6H-SiC was performed at elevated temperatures and damage removal/accumulation was studied. It was found that temperatures around 1600°C are necessary to successfully recrystallize the radiation damage for Ti, Ga, Si and C implantations, but no damage removal was monitored for In implantation. In order to minimize the damage produced during ion implantation, it was decided to employ a multistep process in which each implantation step was followed by annealing. This approach was realized for 125 keV Ti++ and 300 keV Ga+ implantations up to a total dose of 1.8 x 1017 cm--2. Ti-implanted substrates were shown to retain good quality in the top layer, whereas Ga implantation preserves the quality of the near-surface region only at lower doses. The implanted species concentration was monitored after each step using Rutherford Backscattering (RBS). GaN films were grown on the prepared substrates and a control SiC sample by MOCVD. TEM and photoluminescence measurements have demonstrated that the quality of GaN films improves upon growth on compliant substrates.

Screen-Cage Ion Plating Of Silver On Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

1995-01-01

Screen-cage ion plating (SCIP) cost-effective technique offering high throwing power for deposition of adherent metal films on ceramic substrates. Applies silver films to complexly shaped substrates of polycrystalline alumina. Silver adheres tenaciously and reduces friction. SCIP holds promise for applying lubricating soft metallic films to high-temperature ceramic components of advanced combustion engines. Other potential uses include coating substrates with metal for protection against corrosion, depositing electrical conductors on dielectric substrates, making optically reflective or electrically or thermally conductive surface layers, and applying decorative metal coats to ceramic trophies or sculptures.

Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

NASA Astrophysics Data System (ADS)

Wong, Justin Wai-Chow

1987-09-01

Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

Ion beam microtexturing of surfaces

NASA Technical Reports Server (NTRS)

Robinson, R. S.

1981-01-01

Some recent work in surface microtecturing by ion beam sputtering is described. The texturing is accomplished by deposition of an impurity onto a substrate while simultaneously bombarding it with an ion beam. A summary of the theory regarding surface diffusion of impurities and the initiation of cone formation is provided. A detailed experimental study of the time-development of individual sputter cones is described. A quasi-liquid coating was observed that apparently reduces the sputter rate of the body of a cone compared to the bulk material. Experimental measurements of surface diffusion activation energies are presented for a variety of substrate-seed combinations and range from about 0.3 eV to 1.2 eV. Observations of apparent crystal structure in sputter cones are discussed. Measurements of the critical temperature for cone formation are also given along with a correlation of critical temperature with substrate sputter rate.

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

NASA Astrophysics Data System (ADS)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Profijt, H. B.; Sanden, M. C. M. van de; Kessels, W. M. M.

2013-01-15

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al{sub 2}O{sub 3}, Co{sub 3}O{sub 4}, and TiO{sub 2}more » thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al{sub 2}O{sub 3} films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.« less

Surface roughness analysis of SiO2 for PECVD, PVD and IBD on different substrates

NASA Astrophysics Data System (ADS)

Amirzada, Muhammad Rizwan; Tatzel, Andreas; Viereck, Volker; Hillmer, Hartmut

2016-02-01

This study compares surface roughness of SiO2 thin layers which are deposited by three different processes (plasma-enhanced chemical vapor deposition, physical vapor deposition and ion beam deposition) on three different substrates (glass, Si and polyethylene naphthalate). Plasma-enhanced chemical vapor deposition (PECVD) processes using a wide range of deposition temperatures from 80 to 300 °C have been applied and compared. It was observed that the nature of the substrate does not influence the surface roughness of the grown layers very much. It is also perceived that the value of the surface roughness keeps on increasing as the deposition temperature of the PECVD process increases. This is due to the increase in the surface diffusion length with the rise in substrate temperature. The layers which have been deposited on Si wafer by ion beam deposition (IBD) process are found to be smoother as compared to the other two techniques. The layers which have been deposited on the glass substrates using PECVD reveal the highest surface roughness values in comparison with the other substrate materials and techniques. Different existing models describing the dynamics of clusters on surfaces are compared and discussed.

Aligned crystalline semiconducting film on a glass substrate and method of making

DOEpatents

Findikoglu, Alp T.

2010-08-24

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

A low-temperature electrolyte for lithium and lithium-ion batteries

NASA Astrophysics Data System (ADS)

Plichta, E. J.; Behl, W. K.

An electrolyte consisting of 1 M solution of lithium hexafluorophosphate in 1:1:1 ethylene carbonate(EC)-dimethyl carbonate(DMC)-ethyl methyl carbonate(EMC) is proposed for low temperature applications of lithium and lithium-ion cells. The new electrolyte has good conductivity and electrochemical stability. Lithium and lithium-ion cells using the new electrolyte were found to be operable at temperatures down to -40°C. The paper also reports on the electrochemical stability of aluminum metal, which is used as a substrate for the positive electrodes in lithium-ion cells, in the new electrolyte.

Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Šiljegović, M.; Bibić, N.

2012-05-01

This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 keV Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (1 0 0) substrates. The TiN films were deposited at the substrate temperature of 150 °C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 × 1015 and 2 × 1016 ions/cm2. The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 × 1016 ions/cm2. It is also observed that the mean crystallite size decreases with the increasing ion fluence.

Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Meyer, M. L.; Ling, J. S.

1977-01-01

An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

Evaluation of copper ion of antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori and optical, mechanical properties

NASA Astrophysics Data System (ADS)

Kim, Young-Hwan; Choi, Yu-ri; Kim, Kwang-Mahn; Choi, Se-Young

2012-02-01

Antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori of copper ion was researched. Also, additional effects of copper ion coating on optical and mechanical properties were researched as well. Copper ion was coated on glass substrate as a thin film to prevent bacteria from growing. Cupric nitrate was used as precursors for copper ion. The copper ion contained sol was deposited by spin coating process on glass substrate. Then, the deposited substrates were heat treated at the temperature range between 200 °C and 250 °C. The thickness of deposited copper layer on the surface was 63 nm. The antibacterial effect of copper ion coated glass on P. aeruginosa, S. typhimurium and H. pylori demonstrated excellent effect compared with parent glass. Copper ion contained layer on glass showed a similar value of transmittance compared with value of parent glass. The 3-point bending strength and Vickers hardness were 209.2 MPa, 540.9 kg/mm2 which were about 1.5% and 1.3% higher than the value of parent glass. From these findings, it is clear that copper ion coating on glass substrate showed outstanding effect not only in antibacterial activity but also in optical and mechanical properties as well.

Coated substrates and process

DOEpatents

Chu, Wei-kan; Childs, Charles B.

1991-01-01

Disclosed herein is a coated substrate and a process for forming films on substrates and for providing a particularly smooth film on a substrate. The method of this invention involves subjecting a surface of a substrate to contact with a stream of ions of an inert gas having sufficient force and energy to substantially change the surface characteristics of said substrate, and then exposing a film-forming material to a stream of ions of an inert gas having sufficient energy to vaporize the atoms of said film-forming material and to transmit the vaporized atoms to the substrate surface with sufficient force to form a film bonded to the substrate. This process is particularly useful commercially because it forms strong bonds at room temperature. This invention is particularly useful for adhering a gold film to diamond and forming ohmic electrodes on diamond, but also can be used to bond other films to substrates.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedmann, T.A.; Tallant, D.R.; Barbour, J.C.

Carbon Nitride (CN{sub x}) films have been grown by ion-assisted pulsed-laser deposition (IAPLD). Graphite targets were laser ablated while bombarding the substrate with ions from a broad-beam Kaufman-type ion source. Ion voltage, current density, substrate temperature, and feed gas composition (N{sub 2} in Ar) were varied. Resultant films were characterized by Raman. Fourier transform infrared (FTIR), and Rutherford back scattering (RBS) spectroscopy. Samples with {approximately} 30% N/C ratio have been fabricated. The corresponding Raman and FTIR spectra indicate that nitrogen is incorporated into the samples by insertion into sp{sup 2}-bonded structures. A low level of C{identical_to}N triple bonds is alsomore » found. As the ion current and voltage are increased with a pure Ar ion beam, Raman peaks associated with nanocrystalline graphite appear in the spectra. Adding low levels of nitrogen to the ion beam first reduces the Raman intensity in the vicinity of the graphite disorder peak without adding detectable amounts of nitrogen to the films (as measured by RBS). At higher nitrogen levels in the ion beam, significant amounts of nitrogen are incorporated into the samples, and the magnitude of the ``disorder`` peak increases. By increasing the temperature of the substrate during deposition, the broad peak due mainly to sp{sup 2}-bonded C-N in the FTIR spectra is shifted to lower wavenumber. This could be interpreted as evidence of single-bonded C-N; however, it is more likely that the character of the sp{sup 2} bonding is changing.« less

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions

NASA Astrophysics Data System (ADS)

Bischoff, L.; Böttger, R.; Heinig, K.-H.; Facsko, S.; Pilz, W.

2014-08-01

Self-organization of surface patterns on GaAs under irradiation with heavy polyatomic Au ions has been observed. The patterns depend on the ion mass, and the substrate temperature as well as the incidence angle of the ions. At room temperature, under normal incidence the surface remains flat, whereas above 200 °C nanodroplets of Ga appear after irradiation with monatomic, biatomic as well as triatomic Au ions of kinetic energies in the range of 10-30 keV per atom. In the intermediate temperature range of 100-200 °C meander- and dot-like patterns form, which are not related to Ga excess. Under oblique ion incidence up to 45° from the surface normal, at room temperature the surface remains flat for mon- and polyatomic Au ions. For bi- and triatomic ions in the range of 60° ≤ α ≤ 70° ripple patterns have been found, which become shingle-like for α ≥ 80°, whereas the surface remains flat for monatomic ions.

Method for wetting a boron alloy to graphite

DOEpatents

Storms, E.K.

1987-08-21

A method is provided for wetting a graphite substrate and spreading a a boron alloy over the substrate. The wetted substrate may be in the form of a needle for an effective ion emission source. The method may also be used to wet a graphite substrate for subsequent joining with another graphite substrate or other metal, or to form a protective coating over a graphite substrate. A noneutectic alloy of boron is formed with a metal selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) with excess boron, i.e., and atomic percentage of boron effective to precipitate boron at a wetting temperature of less than the liquid-phase boundary temperature of the alloy. The alloy is applied to the substrate and the graphite substrate is then heated to the wetting temperature and maintained at the wetting temperature for a time effective for the alloy to wet and spread over the substrate. The excess boron is evenly dispersed in the alloy and is readily available to promote the wetting and spreading action of the alloy. 1 fig.

Ion plating studies for high temperature applications

NASA Technical Reports Server (NTRS)

Davis, J. H.

1980-01-01

An experimental project was undertaken to ion plate, by electron beam evaporation, Al films onto 4340 steel substrates using (and at the time troubleshooting) the custom built V.T.A. 7375 electron beam ion plating system. A careful recent literature and commercial vendor survey indicates possible means of improving the trouble plagued V.T.A. system.

Deposition of diamond-like films by ECR microwave plasma

NASA Technical Reports Server (NTRS)

Shing, Yuh-Han (Inventor); Pool, Frederick S. (Inventor)

1995-01-01

Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

Stresses and Temperature Stability of Dense Wavelength Division Multiplexing Filters Prepared by Reactive Ion-Assisted E-Gun Evaporation

NASA Astrophysics Data System (ADS)

Wei, Chao-Tsang; Shieh, Han-Ping D.

2005-10-01

In this paper, we report the in situ measurement of the temperature stability of narrow-band-pass filters on different types of substrate, for dense wavelength division multiplexing (DWDM) filters in optical-fiber transmission systems. The DWDM filters were designed as all-dielectric Fabry-Perot filters and fabricated by reactive ion-assisted deposition. Ta2O5 and SiO2 were used as high- and low-refractive-index layers, respectively, for constructing the DWDM filters. The accuracy and stability of the coating process were evaluated for fabricating the DWDM filters for the temperature stability of the center wavelength. The center wavelength shift was determined to be greatly dependent on the coefficient of thermal expansion of the substrate on which the filter is deposited.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.

2003-01-01

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Effect of Ti Substrate Ion Implantation on the Physical Properties of Anodic TiO2 Nanotubes

NASA Astrophysics Data System (ADS)

Jedi-Soltanabadi, Zahra; Ghoranneviss, Mahmood; Ghorannevis, Zohreh; Akbari, Hossein

2018-03-01

The influence of nitrogen-ion implantation on the titanium (Ti) surface is studied. The nontreated Ti and the Ti treated with ion implantation were anodized in an ethylene-glycol-based electrolyte solution containing 0.3 wt% ammonium fluoride (NH4F) and 3 vol% deionized (DI) water at a potential of 60 V for 1 h at room temperature. The current density during the growth of the TiO2 nanotubes was monitored in-situ. The surface roughnesses of the Ti substrates before and after the ion implantation were investigated with atomic force microscopy (AFM). The surface roughness was lower for the treated Ti substrate. The morphology of the anodic TiO2 nanotubes was studied by using field-emission scanning electron microscopy (FESEM). Clearly, the titanium nanotubes grown on the treated substrate were longer. In addition, some ribs were observed on their walls. The optical band gap of the anodic TiO2 nanotubes was characterized by using a diffuse reflection spectral (DRS) analysis. The anodic TiO2 nanotubes grown on the treated Ti substrate revealed a band gap energy of approximately 3.02 eV.

Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

PubMed

Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

2011-05-01

The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

PubMed Central

2018-01-01

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiOx and HfOx and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiNx and HfNx films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiOx were slightly improved whereas those of SiNx were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for topographically selective deposition on 3D substrates, are discussed. PMID:29554799

Step edge sputtering yield at grazing incidence ion bombardment.

PubMed

Hansen, Henri; Polop, Celia; Michely, Thomas; Friedrich, Andreas; Urbassek, Herbert M

2004-06-18

The surface morphology of Pt(111) was investigated by scanning tunneling microscopy after 5 keV Ar+ ion bombardment at grazing incidence in dependence of the ion fluence and in the temperature range between 625 and 720 K. The average erosion rate was found to be strongly dependent on the ion fluence and the substrate temperature during bombardment. This dependence is traced back to the variation of step concentration with temperature and fluence. We develop a simple model allowing us to determine separately the constant sputtering yields for terraces and for impact area stripes in front of ascending steps. The experimentally determined yield of these stripes--the step-edge sputtering yield--is in excellent agreement with our molecular dynamics simulations performed for the experimental situation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie; Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17; Gahan, David, E-mail: david.gahan@impedans.com

A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this researchmore » work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.« less

Selective Separation of Metal Ions via Monolayer Nanoporous Graphene with Carboxyl Groups.

PubMed

Li, Zhan; Liu, Yanqi; Zhao, Yang; Zhang, Xin; Qian, Lijuan; Tian, Longlong; Bai, Jing; Qi, Wei; Yao, Huijun; Gao, Bin; Liu, Jie; Wu, Wangsuo; Qiu, Hongdeng

2016-10-18

Graphene-coated plastic substrates, such as polyethylene terephthalate (PET), are regularly used in flexible electronic devices. Here we demonstrate a new application of the graphene-coated nanoporous PET membrane for the selective separation of metal ions in an ion exchange manner. Irradiation with swift heavy ions is used to perforate graphene and PET substrate. This process could create graphene nanopores with carboxyl groups, thus forming conical holes in the PET after chemical etching to support graphene nanopores. Therefore, a monolayer nanoporous graphene membrane with a PET substrate is constructed successfully to investigate its ionic selective separation. We find that the permeation ratio of ions strongly depends on the temperature and H + concentration in the driving solution. An electric field can increase the permeation ratio of ions through the graphene nanopores, but it inhibits the ion selective separation. Moreover, the structure of the graphene nanopore with carboxyl groups is resolved at the density functional theory level. The results show the asymmetric structure of the nanopore with carboxyl groups, and the analysis indicates that the ionic permeation can be attributed to the ion exchange between metal ions and protons on the two sides of graphene nanopores. These results would be beneficial to the design of membrane separation materials made from graphene with efficient online and offline bulk separation.

Cu ion ink for a flexible substrate and highly conductive patterning by intensive pulsed light sintering.

PubMed

Wang, Byung-Yong; Yoo, Tae-Hee; Song, Yong-Won; Lim, Dae-Soon; Oh, Young-Jei

2013-05-22

Direct printing techniques that utilize nanoparticles to mitigate environmental pollution and reduce the processing time of the routing and formation of electrodes have received much attention lately. In particular, copper (Cu) nanoink using Cu nanoparticles offers high conductivity and can be prepared at low cost. However, it is difficult to produce homogeneous nanoparticles and ensure good dispersion within the ink. Moreover, Cu particles require a sintering process over an extended time at a high temperature due to high melting temperature of Cu. During this process, the nanoparticles oxidize quickly in air. To address these problems, the authors developed a Cu ion ink that is free of Cu particles or any other impurities. It consequently does not require separate dispersion stability. In addition, the developed ink is environmentally friendly and can be sintered even at low temperatures. The Cu ion ink was sintered on a flexible substrate using intense pulsed light (IPL), which facilitates large-area, high-speed calcination at room temperature and at atmospheric pressures. As the applied light energy increases, the Cu2O phase diminishes, leaving only the Cu phase. This is attributed to the influence of formic acid (HCOOH) on the Cu ion ink. Only the Cu phase was observed above 40 J cm(-2). The Cu-patterned film after sintering showed outstanding electrical resistivity in a range of 3.21-5.27 μΩ·cm at an IPL energy of 40-60 J cm(-2). A spiral-type micropattern with a line width of 160 μm on a PI substrate was formed without line bulges or coffee ring effects. The electrical resistivity was 5.27 μΩ·cm at an energy level of 40.6 J cm(-2).

Amorphous diamond films

DOEpatents

Falabella, S.

1998-06-09

Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

NASA Astrophysics Data System (ADS)

Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

1992-03-01

A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

Thermal process induced change of conductivity in As-doped ZnO

NASA Astrophysics Data System (ADS)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

NASA Astrophysics Data System (ADS)

Liang, J. H.; Wang, S. C.

2007-08-01

The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 × 1014 cm-2 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 °C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT specimen while just the opposite is true in the as-implanted RT one. The as-annealed results illustrated that the extension of the boron depth profile into the bulk via transient-enhanced diffusion (TED) in the LT specimen is less than it is in the RT one. Only residual defects are visible in the LT specimen while two clear bands of dislocation loops appear in the RT one.

Plasma-Based Surface Modification and Corrosion in High Temperature Environments

DTIC Science & Technology

2009-02-05

supercritical water, molten salts, supercritical carbon dioxide (KAPL), and helium have been designed and built Room temperature corrosion tests for...coatings such as diamond-like carbon (DLC) and Si-DLC, performed at < 5kV) 4 Energetic ion mixing of thin nano-multilayers Enhancing coating-substrate...Nitrogen ion implantation of 17-7PH stainless steel (with Alison Gas Turbines ) Also a 11% decrease in erosion rate for the N+ implanted sample

Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

NASA Astrophysics Data System (ADS)

Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

2015-12-01

P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

Ion beam deposition of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-01-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria-stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 80.5 K without post-deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c dimensions and low Tc's. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.

High-mobility low-temperature ZnO transistors with low-voltage operation

NASA Astrophysics Data System (ADS)

Bong, Hyojin; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Beom Joon; Cho, Jeong Ho; Cho, Kilwon

2010-05-01

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm2/V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Fabrication of amorphous diamond films

DOEpatents

Falabella, S.

1995-12-12

Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

Anode for a secondary, high-temperature electrochemical cell

DOEpatents

Vissers, Donald R.; Tani, Benjamin S.

1976-01-01

A high-temperature, secondary electrochemical cell includes an anode containing lithium, an electrolyte containing lithium ions and a cathode containing a chalcogen material such as sulfur or a metallic sulfide. The anode includes a porous substrate formed of, for instance, a compacted mass of entangled metallic fibers providing interstitial crevices for receiving molten lithium metal. The surfaces of the interstitial crevices are provided with a coating of cobalt metal to enhance the retention of the molten lithium metal within the substrate.

High speed, mask-less, laser controlled deposition of microscale tungsten tracks using 405 nm wavelength diode laser

NASA Astrophysics Data System (ADS)

Ten, Jyi Sheuan; Sparkes, Martin; O'Neill, William

2017-02-01

A rapid, mask-less deposition technique for the deposition of conductive tracks to nano- and micro-devices has been developed. The process uses a 405 nm wavelength laser diode for the direct deposition of tungsten tracks on silicon substrates via laser assisted chemical vapour deposition. Unlike lithographic processes this technique is single step and does not require chemical masks that may contaminate the substrate. To demonstrate the process, tungsten was deposited from tungsten hexacarbonyl precursors to produce conductive tracks with widths of 1.7-28 μm and heights of 0.05-35 μm at laser scan speeds up to 40 μm/s. The highest volumetric deposition rate achieved is 1×104 μm3/s, three orders of magnitude higher than that of focused ion beam deposition and on par with a 515 nm wavelength argon ion laser previously reported as the laser source. The microstructure and elemental composition of the deposits are comparable to that of largearea chemical vapour deposition methods using the same chemical precursor. The contact resistance and track resistance of the deposits has been measured using the transfer length method to be 205 μΩ cm. The deposition temperature has been estimated at 334 °C from a laser heat transfer model accounting for temperature dependent optical and physical properties of the substrate. The peak temperatures achieved on silicon and other substrates are higher than the thermal dissociation temperature of numerous precursors, indicating that this technique can also be used to deposit other materials such as gold and platinum on various substrates.

Transfer printing of thermoreversible ion gels for flexible electronics.

PubMed

Lee, Keun Hyung; Zhang, Sipei; Gu, Yuanyan; Lodge, Timothy P; Frisbie, C Daniel

2013-10-09

Thermally assisted transfer printing was employed to pattern thin films of high capacitance ion gels on polyimide, poly(ethylene terephthalate), and SiO2 substrates. The ion gels consisted of 20 wt % block copolymer poly(styrene-b-ethylene oxide-b-styrene and 80 wt % ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl)amide. Patterning resolution was on the order of 10 μm. Importantly, ion gels containing the block polymer with short PS end blocks (3.4 kg/mol) could be transfer-printed because of thermoreversible gelation that enabled intimate gel-substrate contact at 100 °C, while gels with long PS blocks (11 kg/mol) were not printable at the same temperature due to poor wetting contact between the gel and substrates. By using printed ion gels as high-capacitance gate insulators, electrolyte-gated thin-film transistors were fabricated that operated at low voltages (<1 V) with high on/off current ratios (∼10(5)). Statistical analysis of carrier mobility, turn-on voltage, and on/off ratio for an array of printed transistors demonstrated the excellent reproducibility of the printing technique. The results show that transfer printing is an attractive route to pattern high-capacitance ion gels for flexible thin-film devices.

Influence of the metal ion on the enzyme activity and kinetics of PepA from Lactobacillus delbrueckii.

PubMed

Ewert, Jacob; Glück, Claudia; Strasdeit, Henry; Fischer, Lutz; Stressler, Timo

2018-03-01

The aminopeptidase A (PepA; EC 3.4.11.7) belongs to the group of metallopeptidases with two bound metal ions per subunit (M1M2(PepA)) and is specific for the cleavage of N-terminal glutamic (Glu) and aspartic acid (Asp) and, in low amounts, serine (Ser) residues. Our group recently characterized the first PepA from a Lactobacillus strain. However, the characterization was performed using synthetic para-nitroaniline substrates and not original peptide substrates, as was done in the current study. Prior to the characterization using original peptide substrates, the PepA purified was converted to its inactive apo-form and eight different metal ions were tested to restore its activity. It was found that five of the metal ions were able to reactivate apo-PepA: Co 2+ , Cu 2+ , Mn 2+ , Ni 2+ and Zn 2+ . Interestingly, depending on the metal ion used for reactivation, the activity and the pH and temperature profile differed. Exemplarily, MnMn(PepA), NiNi(PepA) and ZnZn(PepA) had an activity optimum using MES buffer (50mM, pH 6.0) and 60°C, whereas the activity optimum changed to Na/K-phosphate-buffer (50mM, pH 7.0) and 55°C for CuCu(PepA). However, more important than the changes in optimum pH and temperature, the kinetic properties of PepA were affected by the metal ion used. While all PepA variants could release N-terminal Glu or Asp, only CoCo(PepA), NiNi(PepA) and CuCu(PepA) could release Ser from the particular peptide substrate. In addition, it was found that the enzyme efficiency (V max /K M ) and catalytic mechanism (positive cooperative binding (Hill coefficent; n), substrate inhibition (K IS )) were influenced by the metal ion. Exemplarily, a high cooperativity (n>2),K IS value >20mM and preference for N-terminal Glu were detected for CuCu(PepA). In summary, the results suggested that an exchange of the metal ion can be used for tailoring the properties of PepA for specific hydrolysis requirements. Copyright © 2017 Elsevier Inc. All rights reserved.

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

NASA Astrophysics Data System (ADS)

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

2018-04-01

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

PubMed

Faraz, Tahsin; Knoops, Harm C M; Verheijen, Marcel A; van Helvoirt, Cristian A A; Karwal, Saurabh; Sharma, Akhil; Beladiya, Vivek; Szeghalmi, Adriana; Hausmann, Dennis M; Henri, Jon; Creatore, Mariadriana; Kessels, Wilhelmus M M

2018-04-18

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiO x and HfO x and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiN x and HfN x films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiO x were slightly improved whereas those of SiN x were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for topographically selective deposition on 3D substrates, are discussed.

Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrasonis, G.; Gago, R.; Jimenez, I.

2005-10-01

Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas.more » The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.« less

Radiation Damage Formation And Annealing In Mg-Implanted GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whelan, Sean; Kelly, Michael J.; Yan, John

2005-06-30

We have implanted GaN with Mg ions over an energy range of 200keV to 1MeV at substrate temperatures of -150 (cold) and +300 deg. C (hot). The radiation damage formation in GaN was increased for cold implants when compared to samples implanted at elevated temperatures. The increase in damage formation is due to a reduction in the dynamic defect annealing during ion irradiation. The dopant stopping in the solid also depends upon the implant temperature. For a fixed implant energy and dose, Mg ions have a shorter range in GaN for cold implants when compared to hot implants which ismore » caused by the increase in scattering centres (disorder)« less

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

High Temperature Solar Reflector, Its Preparation and Use

NASA Technical Reports Server (NTRS)

Jaworske, Donald A. (Inventor)

1999-01-01

A coating-substrate combination having high specular reflectivity at high temperatures reaching 8000 C in a vacuum is described. The substrate comprises pure nickel metal or a nickel-containing metal alloy such as stainless steel having a highly polished reflective surface. The coating is a layer of silver deposited on the substrate to a thickness of 300 A to 3000 A. A 300 A to 5000 A protective coating of silica, alumina or magnesium fluoride is used to cover the silver and to protect it from oxidation. The combination is useful as a parabolic shaped secondary concentrator for collecting solar radiation for generating power or thermal energy for satellite uses. The reflective layer and protective coating preferably are applied to the reflective surface of the substrate by electron beam evaporation or by ion sputtering.

Temperature sensor based on a polymer diffraction grating with silver nanoparticles

NASA Astrophysics Data System (ADS)

Nuzhdin, V. I.; Valeev, V. F.; Galyautdinov, M. F.; Osin, Yu. N.; Stepanov, A. L.

2018-01-01

The method is suggested for producing an optical temperature noncontact sensor on a polymer polymethylmethacrylate (PMMA) substrate with a diffraction optical element formed by implanting low-energy high-dose silver ions through a surface mask. Ion implantation is performed at an energy of 30 keV, a radiation dose of 5.0 × 1016 ion cm-2 and an ion beam current density of 2 μA cm-2 through a surface metal mask having the form of grid with square periodical holes (cells) of size 25 μm. In the course of implantation, silver nanoparticles are produced in periodical unmasked domains of irradiated PMMA. Operation of the temperature sensor on diffraction microstructures made of polymer with silver nanoparticles is demonstrated in the range from 20 °C to 95 °C by testing it with a probe radiation of a He - Ne laser.

Surface 3D nanostructuring by tightly focused laser pulse: simulations by Lagrangian code and molecular dynamics

NASA Astrophysics Data System (ADS)

Inogamov, Nail A.; Zhakhovsky, Vasily V.

2016-02-01

There are many important applications in which the ultrashort diffraction-limited and therefore tightly focused laser pulses irradiates metal films mounted on dielectric substrate. Here we present the detailed picture of laser peeling and 3D structure formation of the thin (relative to a depth of a heat affected zone in the bulk targets) gold films on glass substrate. The underlying physics of such diffraction-limited laser peeling was not well understood previously. Our approach is based on a physical model which takes into consideration the new calculations of the two-temperature (2T) equation of state (2T EoS) and the two-temperature transport coefficients together with the coupling parameter between electron and ion subsystems. The usage of the 2T EoS and the kinetic coefficients is required because absorption of an ultrashort pulse with duration of 10-1000 fs excites electron subsystem of metal and transfers substance into the 2T state with hot electrons (typical electron temperatures 1-3 eV) and much colder ions. It is shown that formation of submicrometer-sized 3D structures is a result of the electron-ion energy transfer, melting, and delamination of film from substrate under combined action of electron and ion pressures, capillary deceleration of the delaminated liquid metal or semiconductor, and ultrafast freezing of molten material. We found that the freezing is going in non-equilibrium regime with strongly overcooled liquid phase. In this case the Stefan approximation is non-applicable because the solidification front speed is limited by the diffusion rate of atoms in the molten material. To solve the problem we have developed the 2T Lagrangian code including all this reach physics in. We also used the high-performance combined Monte- Carlo and molecular dynamics code for simulation of surface 3D nanostructuring at later times after completion of electron-ion relaxation.

Changes in size of nano phase iron inclusions with temperature: Experimental simulation of space weathering effects at high temperature

NASA Astrophysics Data System (ADS)

Rout, S. S.; Moroz, L. V.; Stockhoff, T.; Baither, D.; Bischoff, A.; Hiesinger, H.

2011-10-01

The mean size of nano phase iron inclusions (npFe0), produced during the space weathering of iron-rich regolith of airless solar system bodies, significantly affects visible and near-infrared (VNIR) spectra. To experimentally simulate the change in the size of npFe0 inclusions with increasing temperature, we produced sputter film deposits on a silicon dioxide substrate by sputtering a pressed pellet prepared from fine olivine powder using 600V Ar+ ions. This silicon dioxide substrate covered with the deposit was later heated to 450°C for 24 hours in an oven under argon atmosphere. Initial TEM analysis of the unheated silicon dioxide substrate showed the presence of a ~ 50 nm-thick layer of an amorphous deposit with nano clusters that has not yet been identified.

Scaling effects in sodium zirconium silicate phosphate (Na 1+ xZr 2Si xP 3- xO 12) ion-conducting thin films

DOE PAGES

Ihlefeld, Jon F.; Gurniak, Emily; Jones, Brad H.; ...

2016-05-04

Preparation of sodium zirconium silicate phosphate (NaSICon), Na 1+xZr 2Si xP 3–xO 12 (0.25 ≤ x ≤ 1.0), thin films has been investigated via a chemical solution approach on platinized silicon substrates. Increasing the silicon content resulted in a reduction in the crystallite size and a reduction in the measured ionic conductivity. Processing temperature was also found to affect microstructure and ionic conductivity with higher processing temperatures resulting in larger crystallite sizes and higher ionic conductivities. The highest room temperature sodium ion conductivity was measured for an x = 0.25 composition at 2.3 × 10 –5 S/cm. In conclusion, themore » decreasing ionic conductivity trends with increasing silicon content and decreasing processing temperature are consistent with grain boundary and defect scattering of conducting ions.« less

Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

NASA Astrophysics Data System (ADS)

Abbate, C.; Busatto, G.; Cova, P.; Delmonte, N.; Giuliani, F.; Iannuzzo, F.; Sanseverino, A.; Velardi, F.

2015-02-01

A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

NASA Astrophysics Data System (ADS)

Peng, Cheng-Jien

The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could significantly improve the time -dependent dielectric breakdown (TDDB) behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping.

Nickel silicide formation in silicon implanted nickel

NASA Astrophysics Data System (ADS)

Rao, Z.; Williams, J. S.; Pogany, A. P.; Sood, D. K.; Collins, G. A.

1995-04-01

Nickel silicide formation during the annealing of very high dose (≥4.5×1017 ions/cm2) Si implanted Ni has been investigated, using ion beam analytical techniques, electron microscopy, and x-ray diffraction analysis. An initial amorphous Si-Ni alloy, formed as a result of high dose ion implantation, first crystallized to Ni2Si upon annealing in the temperature region of 200-300 °C. This was followed by the formation of Ni5Si2 in the temperature region of 300-400 °C and then by Ni3Si at 400-600 °C. The Ni3Si layer was found to have an epitaxial relationship with the substrate Ni, which was determined as Ni3Si<100>∥Ni<100> and Ni3Si<110>∥Ni<110> for Ni(100) samples. The minimum channeling yield in the 2 MeV He Rutherford backscattering and channeling spectra of this epitaxial layer improved with higher annealing temperatures up to 600 °C, and reached a best value measured at about 8%. However, the epitaxial Ni3Si dissolved after long time annealing at 600 °C or annealing at higher temperatures to liberate soluble Si into the Ni substrate. The epitaxy is attributed to the excellent lattice match between the Ni3Si and the Ni. The annealing behavior follows the predictions of the Ni-Si phase diagram for this nickel-rich binary system.

Origin of MeV ion irradiation-induced stress changes in SiO2

NASA Astrophysics Data System (ADS)

Brongersma, M. L.; Snoeks, E.; van Dillen, T.; Polman, A.

2000-07-01

The 4 MeV Xe ion irradiation of a thin thermally grown SiO2 film on a Si substrate leads to four different effects in which each manifests itself by a characteristic change in the mechanical stress state of the film: densification, ascribed to a beam-induced structural change in the silica network; stress relaxation by radiation-enhanced plastic flow; anisotropic expansion and stress generation; and transient stress relaxation ascribed to the annealing of point defects. Using sensitive wafer-curvature measurements, in situ measurements of the in-plane mechanical stress were made during and after ion irradiation at various temperatures in the range from 95 to 575 K, in order to study the magnitude of these effects, the mechanism behind them, as well as their interplay. It is found that the structural transformation leads to a state with an equilibrium density that is 1.7%-3.2% higher than the initial state, depending on the irradiation temperature. Due to the constraint imposed by the substrate, this transformation causes a tensile in-plane stress in the oxide film. This stress is relaxed by plastic flow, leading to densification of the film. The anisotropic strain-generation rate decreases linearly with temperature from (2.5±0.4)×10-17cm2/ion at 95 K to (-0.9±0.7)×10-17 cm2/ion at 575 K. The spectrum of irradiation-induced point defects, measured from the stress change after the ion beam was switched off, peaks below 0.23 eV and extends up to 0.80 eV. All four irradiation-induced effects can be described using a thermal spike model.

Silver-gold alloy nanoparticles as tunable substrates for systematic control of ion-desorption efficiency and heat transfer in surface-assisted laser desorption/ionization.

PubMed

Lai, Samuel Kin-Man; Cheng, Yu-Hong; Tang, Ho-Wai; Ng, Kwan-Ming

2017-08-09

Systematically controlling heat transfer in the surface-assisted laser desorption/ionization (SALDI) process and thus enhancing the analytical performance of SALDI-MS remains a challenging task. In the current study, by tuning the metal contents of Ag-Au alloy nanoparticle substrates (AgNPs, Ag55Au45NPs, Ag15Au85NPs and AuNPs, ∅: ∼2.0 nm), it was found that both SALDI ion-desorption efficiency and heat transfer can be controlled in a wide range of laser fluence (21.3 mJ cm -2 to 125.9 mJ cm -2 ). It was discovered that ion detection sensitivity can be enhanced at any laser fluence by tuning up the Ag content of the alloy nanoparticle, whereas the extent of ion fragmentation can be reduced by tuning up the Au content. The enhancement effect of Ag content on ion desorption was found to be attributable to the increase in laser absorption efficiency (at 355 nm) with Ag content. Tuning the laser absorption efficiency by changing the metal composition was also effective in controlling the heat transfer from the NPs to the analytes. The laser-induced heating of Ag-rich alloy NPs could be balanced or even overridden by increasing the Au content of NPs, resulting in the reduction of the fragmentation of analytes. In the correlation of experimental measurement with molecular dynamics simulation, the effect of metal composition on the dynamics of the ion desorption process was also elucidated. Upon increasing the Ag content, it was also found that phase transition temperatures, such as melting, vaporization and phase explosion temperature, of NPs could be reduced. This further enhanced the desorption of analyte ions via phase-transition-driven desorption processes. The significant cooling effect on the analyte ions observed at high laser fluence was also determined to be originated from the phase explosion of the NPs. This study revealed that the development of alloy nanoparticles as SALDI substrates can constitute an effective means for the systematic control of ion-desorption efficiency and the extent of heat transfer, which could potentially enhance the analytical performance of SALDI-MS.

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

NASA Astrophysics Data System (ADS)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

NASA Astrophysics Data System (ADS)

Panda, B.; Dhar, A.; Nigam, G. D.; Bhattacharya, D.; Ray, S. K.

1998-01-01

Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance-voltage, conductance-voltage, and current density-electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The <100> texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10-6 A/cm2 at 100 kV/cm) compared to that on silicon.

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

NASA Technical Reports Server (NTRS)

Kaul, Anupama; Kleinsasser, Alan; Bumble, Bruce; LeDuc, Henry; Lee, Karen

2005-01-01

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Catalytic thermal barrier coatings

DOEpatents

Kulkarni, Anand A.; Campbell, Christian X.; Subramanian, Ramesh

2009-06-02

A catalyst element (30) for high temperature applications such as a gas turbine engine. The catalyst element includes a metal substrate such as a tube (32) having a layer of ceramic thermal barrier coating material (34) disposed on the substrate for thermally insulating the metal substrate from a high temperature fuel/air mixture. The ceramic thermal barrier coating material is formed of a crystal structure populated with base elements but with selected sites of the crystal structure being populated by substitute ions selected to allow the ceramic thermal barrier coating material to catalytically react the fuel-air mixture at a higher rate than would the base compound without the ionic substitutions. Precious metal crystallites may be disposed within the crystal structure to allow the ceramic thermal barrier coating material to catalytically react the fuel-air mixture at a lower light-off temperature than would the ceramic thermal barrier coating material without the precious metal crystallites.

Influence of surface melting effects and availability of reagent ions on LDI-MS efficiency after UV laser irradiation of Pd nanostructures.

PubMed

Silina, Yuliya E; Koch, Marcus; Volmer, Dietrich A

2015-03-01

In this study, the influence of surface morphology, reagent ions and surface restructuring effects on atmospheric pressure laser desorption/ionization (LDI) for small molecules after laser irradiation of palladium self-assembled nanoparticular (Pd-NP) structures has been systematically studied. The dominant role of surface morphology during the LDI process, which was previously shown for silicon-based substrates, has not been investigated for metal-based substrates before. In our experiments, we demonstrated that both the presence of reagent ions and surface reorganization effects--in particular, melting--during laser irradiation was required for LDI activity of the substrate. The synthesized Pd nanostructures with diameters ranging from 60 to 180 nm started to melt at similar temperatures, viz. 890-898 K. These materials exhibited different LDI efficiencies, however, with Pd-NP materials being the most effective surface in our experiments. Pd nanostructures of diameters >400-800 nm started to melt at higher temperatures, >1000 K, making such targets more resistant to laser irradiation, with subsequent loss of LDI activity. Our data demonstrated that both melting of the surface structures and the presence of reagent ions were essential for efficient LDI of the investigated low molecular weight compounds. This dependence of LDI on melting points was exploited further to improve the performance of Pd-NP-based sampling targets. For example, adding sodium hypophosphite as reducing agent to Pd electrolyte solutions during synthesis lowered the melting points of the Pd-NP materials and subsequently gave reduced laser fluence requirements for LDI. Copyright © 2015 John Wiley & Sons, Ltd.

Molecular dynamics simulation of Coulomb explosion, melting and shock wave creation in silicon after an ionization pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Zhongyu; Shao, Lin, E-mail: lshao@tamu.edu; Chen, Di

Strong electronic stopping power of swift ions in a semiconducting or insulating substrate can lead to localized electron stripping. The subsequent repulsive interactions among charged target atoms can cause Coulomb explosion. Using molecular dynamics simulation, we simulate Coulomb explosion in silicon by introducing an ionization pulse lasting for different periods, and at different substrate temperatures. We find that the longer the pulse period, the larger the melting radius. The observation can be explained by a critical energy density model assuming that melting required thermal energy density is a constant value and the total thermal energy gained from Coulomb explosion ismore » linearly proportional to the ionization period. Our studies also show that melting radius is larger at higher substrate temperatures. The temperature effect is explained due to a longer structural relaxation above the melting temperature at original ionization boundary due to lower heat dissipation rates. Furthermore, simulations show the formation of shock waves, created due to the compression from the melting core.« less

The effect of heat treatment on superhydrophilicity of TiO2 nano thin films

NASA Astrophysics Data System (ADS)

Ashkarran, A. A.; Mohammadizadeh, M. R.

2007-11-01

TiO2 thin films were synthesized by the sol-gel method and spin coating process. The calcination temperature was changed from 100 to 550°C. XRD patterns show increasing the content of polycrystalline anatase phase with increasing the calcination temperature. The AFM results indicate granular morphology of the films, which particle size changes from 22 to 166nm by increasing the calcination temperature. The RBS, EDX and Raman spectroscopy of the films show the ratio of Ti:O ~0.5, and diffusion of sodium ions from substrate into the layer, by increasing the calcination temperature. The UV-vis spectroscopy of the films indicates a red shift by increasing the calcination temperature. The contact angle meter experiment shows that superhydrophilicity of the films depends on the formation of anatase crystal structure and diffused sodium content from substrate to the layer. The best hydrophilicity property was observed at 450°C calcination temperature, where the film is converted to a superhydrophilic surface after 10min under 2mW/cm2 UV irradiation. Water droplet on TiO2 thin film on Si(111), Si(100), and quartz substrates is spread to smaller angles rather than glass and polycrystalline Si substrates under UV irradiation.

Dynamic hyperfiltration membranes for high-temperature spacecraft wash water recycle

NASA Technical Reports Server (NTRS)

Gaddis, J. L.; Brandon, C. A.

1978-01-01

The effect of operating parameters on the performance of the hyperfiltration membrane when operating on washwater was examined. The parameters were pressure, temperature, velocity, and concentration. Data taken included rejections of organic materials, ammonia, urea, and an assortment of ions. The membrane used was a dual layer, polyacrylic acid over zirconium oxide, deposited in situ on a porcelain ceramic substrate.

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

DOE PAGES

Cramer, Corson; Farnell, Casey; Farnell, Cody; ...

2018-03-19

Multilayers (MLs) of 31 bi-layers and a 10-nm layer thickness each of Si/SiC were deposited on silicon, quartz and mullite substrates using a high-speed, ion-beam sputter deposition process. The samples deposited on the silicon substrates were used for imaging purposes and structural verification as they did not allow for accurate electrical measurement of the material. The Seebeck coefficient and the electrical resistivity on the mullite and the quartz substrates were reported as a function of temperature and used to compare the film performance. The thermal conductivity measurement was performed for ML samples grown on Si, and an average value ofmore » the thermal conductivity was used to find the figure of merit, zT, for all samples tested. X-ray diffraction (XRD) spectra showed an amorphous nature of the thin films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to study the film morphology and verify the nature of the crystallinity. The mobility of the multilayer films was measured to be only 0.039 to 1.0 cm 2/Vs at room temperature. The samples were tested three times in the temperature range of 300 K to 900 K to document the changes in the films with temperature cycling. The highest Seebeck coefficient is measured for a Si/SiC multilayer system on quartz and mullite substrates and were observed at 870 K to be roughly -2600 μV/K due to a strain-induced redistribution of the states’ effect. The highest figure of merit, zT, calculated for the multilayers in this study was 0.08 at 870 K.« less

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cramer, Corson; Farnell, Casey; Farnell, Cody

Multilayers (MLs) of 31 bi-layers and a 10-nm layer thickness each of Si/SiC were deposited on silicon, quartz and mullite substrates using a high-speed, ion-beam sputter deposition process. The samples deposited on the silicon substrates were used for imaging purposes and structural verification as they did not allow for accurate electrical measurement of the material. The Seebeck coefficient and the electrical resistivity on the mullite and the quartz substrates were reported as a function of temperature and used to compare the film performance. The thermal conductivity measurement was performed for ML samples grown on Si, and an average value ofmore » the thermal conductivity was used to find the figure of merit, zT, for all samples tested. X-ray diffraction (XRD) spectra showed an amorphous nature of the thin films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to study the film morphology and verify the nature of the crystallinity. The mobility of the multilayer films was measured to be only 0.039 to 1.0 cm 2/Vs at room temperature. The samples were tested three times in the temperature range of 300 K to 900 K to document the changes in the films with temperature cycling. The highest Seebeck coefficient is measured for a Si/SiC multilayer system on quartz and mullite substrates and were observed at 870 K to be roughly -2600 μV/K due to a strain-induced redistribution of the states’ effect. The highest figure of merit, zT, calculated for the multilayers in this study was 0.08 at 870 K.« less

Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

NASA Astrophysics Data System (ADS)

Mändl, S.; Rauschenbach, B.

2003-08-01

Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 °C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry).

Investigation of Room temperature Ferromagnetism in Mn doped Ge

NASA Astrophysics Data System (ADS)

Colakerol Arslan, Leyla; Toydemir, Burcu; Onel, Aykut Can; Ertas, Merve; Doganay, Hatice; Gebze Inst of Tech Collaboration; Research Center Julich Collaboration

2014-03-01

We present a systematic investigation of structural, magnetic and electronic properties of MnxGe1 -x single crystals. MnxGe1-x films were grown by sequential deposition of Ge and Mn by molecular-beam epitaxy at low substrate temperatures in order to avoid precipitation of ferromagnetic Ge-Mn intermetallic compounds. Reflected high energy electron diffraction and x-ray diffraction observations revealed that films are epitaxially grown on Si (001) substrates from the initial stage without any other phase formation. Magnetic measurements carried out using a physical property measurement system showed that all samples exhibited ferromagnetism at room temperature. Electron spin resonance indicates the presence of magnetically ordered localized spins of divalent Mn ions. X-ray absorption measurements at the Mn L-edge confirm significant substitutional doping of Mn into Ge-sites. The ferromagnetism was mainly induced by Mn substitution for Ge site, and indirect exchange interaction of these magnetic ions with the intrinsic charge carriers is the origin of ferromagnetism. The magnetic interactions were better understood by codoping with nonmagnetic impurities. This work was supported by Marie-Curie Reintegration Grant (PIRG08-GA-2010-276973).

The temperature and ion energy dependence of deuterium retention in lithium films

NASA Astrophysics Data System (ADS)

Buzi, Luxherta; Koel, Bruce E.; Skinner, Charles H.

2016-10-01

Lithium conditioning of plasma facing components in magnetic fusion devices has improved plasma performance and lowered hydrogen recycling. For applications of lithium in future high heat flux and long pulse duration machines it is important to understand and parameterize deuterium retention in lithium. This work presents surface science studies of deuterium retention in lithium films as a function of surface temperature, incident deuterium ion energy and flux. Initial experiments are performed on thin (3-30 ML) lithium films deposited on a single crystal molybdenum substrate to avoid effects due to grain boundaries, intrinsic defects and impurities. A monoenergetic and mass-filtered deuterium ion beam was generated in a differentially pumped Colutron ion gun. Auger electron spectroscopy and X-ray photoelectron spectroscopy were used to identify the elemental composition and temperature programmed desorption was used to measure the deuterium retention under the different conditions. Support was provided through DOE Contract Number DE-AC02-09CH11466.

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

NASA Astrophysics Data System (ADS)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-02-01

Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

Ion scattering and electron spectroscopy of the chemical species at a HF-prepared Si(211) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaime-Vasquez, M.; Martinka, M.; Groenert, M.

2006-01-16

The species and the nature of their chemical bonds at the surface of a hydrogen-terminated Si(211) wafer were characterized using temperature desorption spectroscopy, ion scattering spectroscopy, and electron spectroscopy. The surface region is dominated by monohydride species with dihydrides present in small amounts. Fluorine is distributed across the top layer as largely a physisorbed species to the Si substrate. Low-energy {sup 3}He{sup +} ions remove the H and F species with only minimal damage to the underlying region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alkhaldi, H. S.; Department of Physics in Jubail Education college, Dammam University, Dammam 1982; Kremer, F.

The development of porosity in single-crystal germanium and silicon-germanium alloys (c-Si{sub 1−x} Ge{sub x}) of (100) orientation was studied under bombardment with 140 keV Ge{sup −} ions over a wide range of temperatures (−180 to 400 °C) and ion fluences up to 1 × 10{sup 18} ions/cm{sup 2}. The surface swelling and morphology were investigated using multi-characterization techniques including optical profilometry, transmission electron microscopy, and scanning electron microscopy. The initiation of porosity and the evolution of the near-surface microstructure strongly depend on the ion fluence, the irradiation temperature, and the stoichiometry of the substrate. Significant results and new findings include: (i) the fact that,more » over the entire temperature and stoichiometry range, porosity is only developed once the substrate is rendered amorphous; (ii) with increasing Si content in the alloy, the onset of porosity is pushed to higher fluences; (iii) porosity is observed for Si contents in the alloy up to 23% but not higher under the irradiation conditions used; and (iv) in all cases the initiation of porosity was observed to occur at the surface of the amorphous alloy above a threshold fluence. This last result strongly suggests that the mechanism for initiation of porosity is via preferential vacancy segregation and clustering at the surface of the amorphous alloy. Particularly at elevated temperatures, preferential sputtering of the Si-Ge atomic species in the alloy also plays an important role in developing the surface topography and porosity in alloys. Such effects are discussed along with the implications of our results for mechanisms of porosity in Ge and its alloys.« less

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface,more » high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

McNally, J.J.

The effects on the properties of Ta/sub 2/O/sub 5/, Al/sub 2/O/sub 3/, SiO/sub 2/ and HfO/sub 2/ single- and multi-layer optical coatings deposited using ion-assisted deposition (IAD) were investigated. IAD is a novel deposition technique which utilizes a separate ion source to direct a beam of ions at the growing film. A Kaufman ion source was used to provide a monoenergetic, neutralized beam of oxygen ions independent of the material evaporation process. The optical and physical properties, as well as laser induced damage threshold (LIDT) values, were studied for coatings bombarded with 200, 300, 500 and 1000 eV oxygen ionsmore » at values of current density from 0 to 200 microAmp/sq cm. IAD was successfully applied to deposit coatings at low temperature on heavy metal fluoride (HMF) glass substrates. The coatings deposited using IAD were hard and dense. The IAD coatings improved the durability and abrasion resistance of the HMF glass substrates. The results of this investigation show that IAD can be used to improve the optical and physical properties of optical coatings.« less

The Formation, Transport Properties and Microstructure of 45 Degrees (001) Tilt Grain Boundaries in Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X) Thin Films

NASA Astrophysics Data System (ADS)

Vuchic, Boris Vukan

1995-01-01

Most high angle grain boundaries in high-T _{c} superconductors exhibit weak link behavior. The Josephson-like properties of these grain boundaries can be used for many device applications such as superconducting quantum interference devices (SQUIDs). The structure-property relationship of different types of 45 ^circ (001) YBa_2 Cu_3O_{7-x} thin film grain boundary junctions are examined to study their weak link nature. A technique, termed sputter-induced epitaxy, is developed to form 45^circ (001) tilt grain boundaries in YBa_2Cu _3O_{7-x} thin films on (100) MgO substrates. A low voltage ion bombardment pre-growth substrate treatment is used to modify the epitaxial orientation relationship between the thin film and the substrate in selected regions. By modifying the orientation of the thin film, grain boundary junctions can be placed in any configuration on the substrate. A variety of pre-growth sputtering conditions in conjunction with atomic force microscopy and Rutherford backscatter spectrometry are used to determine the role of the ions in modifying the substrate surface. Sputter-induced epitaxy is extended to a multilayer MgO/LaAlO_3 substrate, allowing integration of the sputter -induced epitaxy junctions into multilayer structures. The low temperature transport properties of the sputter-induced epitaxy junctions and a set of bi-epitaxial grain boundaries are studied. Individual grain boundaries are isolated and characterized for resistance vs. temperature, current vs. voltage as a function of temperature and magnetic field behavior. Resistive and superconducting grain boundaries are compared. Microstructural analysis is performed using scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy (HREM). Marked differences are observed in the microstructure of resistive and superconducting grain boundaries. HREM studies suggest the importance of the local atomic scale structure of the grain boundary in transport properties. A phenomenological grain boundary model is proposed to describe the structure -property relationship of the boundaries.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goto, Tetsuya; Matsuoka, Takaaki; Ohmi, Tadahiro

Novel magnetron-sputtering equipment, called rotation magnet sputtering (ROT-MS), was developed to overcome various disadvantages of current magnetron-sputtering equipment. Disadvantages include (1) very low target utilization of less than 20%, (2) difficulty in obtaining uniform deposition on the substrate, and (3) charge-up damages and ion-bombardment-induced damages resulting from very high electron temperature (>3 eV) and that the substrate is set at the plasma excitation region. In ROT-MS, a number of moving high-density plasma loops are excited on the target surface by rotating helical magnets, resulting in very high target utilization with uniform target erosion and uniform deposition on the substrate. Thismore » excellent performance can be principally maintained even if equipment size increases for very large-substrate deposition. Because strong horizontal magnetic fields (>0.05 T) are produced within a very limited region just at the target surface, very low electron-temperature plasmas (<2.5 eV for Ar plasma and <1 eV for direct-current-excited Xe plasma) are excited at the very limited region adjacent to the target surface with a combination of grounded plate closely mounted on the strong magnetic field region. Consequently, the authors can establish charge-up damage-free and ion-bombardment-induced damage-free processes. ROT-MS has been applied for thin-film formation of LaB{sub 6}, which is well known as a stable, low-work-function bulk-crystal material for electron emissions. The work function of the LaB{sub 6} film decreased to 2.8 eV due to enhanced (100)-orientation crystallinity and reduced resistivity realized by adjusting the flux of low-energy bombarding ions impinging on the depositing surface, which work very efficiently, improving the performance of the electron emission devices.« less

Method for producing a tube

DOEpatents

Peterson, Kenneth A [Albuquerque, NM; Rohde, Steven B [Corrales, NM; Pfeifer, Kent B [Los Lunas, NM; Turner, Timothy S [Rio Rancho, NM

2007-01-02

A method is described for producing tubular substrates having parallel spaced concentric rings of electrical conductors that can be used as the drift tube of an Ion Mobility Spectrometer (IMS). The invention comprises providing electrodes on the inside of a tube that are electrically connected to the outside of the tube through conductors that extend between adjacent plies of substrate that are combined to form the tube. Tubular substrates are formed from flexible polymeric printed wiring board materials, ceramic materials and material compositions of glass and ceramic, commonly known as Low Temperature Co-Fired Ceramic (LTCC). The adjacent plies are sealed together around the electrode.

Synchronized metal-ion irradiation as a way to control growth of transition-metal nitride alloy films during hybrid HIPIMS/DCMS co-sputtering

NASA Astrophysics Data System (ADS)

Greczynski, Grzegorz

2016-09-01

High-power pulsed magnetron sputtering (HIPIMS) is particularly attractive for growth of transition metal (TM) nitride alloys for two reasons: (i) the high ionization degree of the sputtered metal flux, and (ii) the time separation of metal- and gas-ion fluxes incident at the substrate. The former implies that ion fluxes originating from elemental targets operated in HIPIMS are distinctly different from those that are obtained during dc magnetron sputtering (DCMS), which helps to separate the effects of HIPIMS and DCMS metal-ion fluxes on film properties. The latter feature allows one to minimize compressive stress due to gas-ion irradiation, by synchronizing the pulsed substrate bias with the metal-rich-plasma portion of the HIPIMS pulse. Here, we use pseudobinary TM nitride model systems TiAlN, TiSiN, TiTaN, and TiAlTaN to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS mode. This allows us to probe the roles of intense and metal-ion fluxes (n = 1 , 2) from HIPIMS-powered targets on film growth kinetics, microstructure, and physical properties over a wide range of M1M2N alloy compositions. TiAlN and TiSiN mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom. Irradiation with lighter metal-ions (M1 =Al+ or Si+ during M1-HIPIMS/Ti-DCMS) yields fully-dense single-phase cubic Ti1-x (M1)x N films. In contrast, with higher-mass film constituent ions such as Ti+, easily exceeds the threshold for precipitation of second phase w-AlN or Si3N4. Based on the above results, a new PVD approach is proposed which relies on the hybrid concept to grow dense, hard, and stress-free thin films with no external heating. The primary targets, Ti and/or Al, operate in DCMS mode providing a continuous flux of sputter-ejected metal atoms to sustain a high deposition rate, while a high-mass target metal, Ta, is driven by HIPIMS to serve as a pulsed source of energetic heavy-metal ions to densify the dilute TiTaN and/or TiAlTaN alloys. No external heating is used and the substrate temperature does not exceed 120 °C. This development allows for widening the application range of hard TM nitride coatings to new classes of technologically-relevant temperature-sensitive substrates, such as components made by plastics, glasses, aluminum alloys, and tempered steels. Author wants to acknowledge the financial support from VINN Excellence Center Functional Nanoscale Materials (FunMat) Grant 2005 02666.

Damage induced in garnets by heavy ion irradiations: a study by optical spectroscopies

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Lelong, Gérald; Guillaumet, Maxime; Toulemonde, Marcel

2018-02-01

The damage induced by heavy-ion irradiation has been studied in yttrium iron garnet (Y3Fe5O12 or YIG) films, doped with Ca, Tb and Tm, grown by liquid-phase epitaxy on gadolinium gallium garnet (Gd3Ga5O12 or GGG) substrates. Irradiations of doped-YIG epitaxial films and GGG substrates with 36-MeV 183W and 12-MeV 197Au ions were applied for fluences between 1 × 1013 and 3 × 1015 cm-2 near room temperature. The radiation damage was monitored by micro-Raman spectroscopy and UV-visible optical absorption spectroscopy. Raman spectra revealed that amorphisation was achieved in YIG for both ions, whereas a high lattice disorder was induced in GGG without reaching amorphisation for the Au ion irradiation. Raman spectra also showed that a major damage of the tetrahedral sites was induced in GGG, as previously found for YIG. It is concluded that with such ions reaching the stopping power threshold of track formation in YIG and GGG the observed rate of amorphisation may result from a combination of electronic and nuclear energy losses as calculated using the unified thermal spike model.

Ultrahigh-current-density metal-ion implantation and diamondlike-hydrocarbon films for tribological applications

NASA Astrophysics Data System (ADS)

Wilbur, P. J.

1993-09-01

The metal-ion-implantation system used to implant metals into substrates are described. The metal vapor required for operation is supplied by drawing sufficient electron current from the plasma discharge to an anode-potential crucible so a solid, pure metal placed in the crucible will be heated to the point of vaporization. The ion-producing, plasma discharge is initiated within a graphite-ion-source body, which operates at high temperature, by using an argon flow that is turned off once the metal vapor is present. Extraction of ion beams several cm in diameter at current densities ranging to several hundred micro-A/sq cm on a target 50 cm downstream of the ion source were demonstrated using Mg, Ag, Cr, Cu, Si, Ti, V, B, and Zr. These metals were implanted into over 100 substrates (discs, pins, flats, wires). A model describing thermal stresses induced in materials (e.g. ceramic plates) during high-current-density implantation is presented. Tribological and microstructural characteristics of iron and 304-stainless-steel samples implanted with Ti or B are examined. Diamondlike-hydrocarbon coatings were applied to steel surfaces and found to exhibit good tribological performance.

Room temperature chemical bath deposition of cadmium selenide, cadmium sulfide and cadmium sulfoselenide thin films with novel nanostructures

NASA Astrophysics Data System (ADS)

VanderHyde, Cephas A.; Sartale, S. D.; Patil, Jayant M.; Ghoderao, Karuna P.; Sawant, Jitendra P.; Kale, Rohidas B.

2015-10-01

A simple, convenient and low cost chemical synthesis route has been used to deposit nanostructured cadmium sulfide, selenide and sulfoselenide thin films at room temperature. The films were deposited on glass substrates, using cadmium acetate as cadmium ion and sodium selenosulfate/thiourea as a selenium/sulfur ion sources. Aqueous ammonia was used as a complex reagent and also to adjust the pH of the final solution. The as-deposited films were uniform, well adherent to the glass substrate, specularly reflective and red/yellow in color depending on selenium and sulfur composition. The X-ray diffraction pattern of deposited cadmium selenide thin film revealed the nanocrystalline nature with cubic phase; cadmium sulfide revealed mixture of cubic along with hexagonal phase and cadmium sulfoselenide thin film were grown with purely hexagonal phase. The morphological observations revealed the growth and formation of interesting one, two and three-dimensional nanostructures. The band gap of thin films was calculated and the results are reported.

Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

NASA Astrophysics Data System (ADS)

Tucker, Mark D.; Czigány, Zsolt; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna

2014-04-01

Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A "fullerene-like" (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

A novel serine protease from strawberry (Fragaria ananassa): Purification and biochemical characterization.

PubMed

Alici, Esma Hande; Arabaci, Gulnur

2018-03-27

In this study, a protease enzyme was purified from strawberry by using Sepharose-4B-l-tyrosine-p-amino benzoic acid affinity chromatography. The molecular weight of pure protease was determined 65.8 kDa by SDS-PAGE. The single band observed on the gel showed that the enzyme had a single polypeptide chain and was successfully purified. Purification of the protease by the chromatographic method resulted in a 395.6-fold increase in specific activity (3600 U/mg). Optimum pH and temperature for the enzyme were 6 and 40 °C, respectively. The protease was stable at a wide temperature range of 40 to 70 °C and a pH range of 3.0 to 9.0. Co 2+ ions stimulated protease activity very strongly. Cu 2+ , Hg 2+ , Cd 2+ and Mn 2+ ions significantly inhibited protease activity. While 2-propanol completely inhibited the enzyme, the enzyme maintained its activity better in the presence of ethanol and methanol. The strawberry protease showed the highest specificity towards hemoglobin among all the natural substrates tested. The specificity of the enzyme towards synthetic substrates was also investigated and it was concluded that it has broad substrate specificity. The obtained results indicated that this purified protease was highly-likely a serine protease and its activity was significantly affected by the presence of metal ions. Copyright © 2018. Published by Elsevier B.V.

The Effect of Molybdenum Substrate Oxidation on Molybdenum Splat Formation

NASA Astrophysics Data System (ADS)

Wang, Jun; Li, Chang-Jiu

2018-01-01

Disk splats are usually observed when the deposition temperature exceeds the transition temperature, whereas thick oxide layer will reduce the adhesion resulting from high deposition temperature. In present study, single molybdenum splats were deposited onto polished molybdenum substrates with different preheating processes to clarify the effect of surface oxidation on the splat formation. Three substrate samples experienced three different preheating processes in an argon atmosphere. Two samples were preheated to 350 and 550 °C, and another sample was cooled to 350 °C after it was preheated to 550 °C. The chemistry and compositions of substrate surface were examined by XPS. The cross sections of splats were prepared by focus ion beam (FIB) and then characterized by SEM. Nearly disk-shaped splat with small fingers in the periphery was observed on the sample preheated to 350 °C. A perfect disk-shape splat was deposited at 550 °C. With the sample on the substrate preheated to 350 °C (cooling down from 550 °C), flower-shaped splat exhibited a central core and discrete periphery detached by some voids. The results of peeling off splats by carbon tape and the morphology of FIB sampled cross sections indicated that no effective bonding formed at the splat-substrate interface for the substrate ever heated to 550 °C, due to the increasing content of MoO3 on the preheated molybdenum surface.

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-05-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films.

PubMed

Chandramohan, S; Kanjilal, A; Sarangi, S N; Majumder, S; Sathyamoorthy, R; Hong, C-H; Som, T

2010-07-01

We demonstrate doping of nanocrystalline CdS thin films with Co ions by ion implantation at an elevated temperature of 573 K. The modifications caused in structural and optical properties of these films are investigated. Co-doping does not lead to amorphization or formation of any secondary phase precipitate for dopant concentrations in the range of 0.34-10.8 at.% used in the present study. However, we observe a systematic reduction in the d-spacing with increasing cobalt concentration. Optical band gap of CdS does not show any obvious change upon Co-doping. In addition, implantation gives rise to grain growth and increase in the surface roughness. The results are discussed in the light of ion-matter interaction in the keV regime.

Comparison of secondary ion intensity enhancement from polymers on silicon and silver substrates by using Au-TOF-SIMS

NASA Astrophysics Data System (ADS)

Kudo, M.; Aimoto, K.; Sunagawa, Y.; Kato, N.; Aoyagi, S.; Iida, S.; Sanada, N.

2008-12-01

The usefulness of the usage of cluster primary ion source together with an Ag substrate and detection of Ag cationized molecular ions was studied from the standpoint to realize high sensitivity TOF-SIMS analysis of organic materials. Although secondary ions from polymer thin films on a Si substrate can be detected in a higher sensitivity with Au 3+ cluster primary ion compared with Ga + ion bombardment, it was clearly observed that the secondary ion intensities from samples on an Ag substrate showed quite a different tendency from that on Si. When monoatomic primary ions, e.g., Au + and Ga +, were used for the measurement of the sample on an Ag substrate, [M+Ag] + ions (M corresponds to polyethylene glycol molecule) were detected in a high sensitivity. On the contrary, when Au 3+ was used, no intensity enhancement of [M+Ag] + ions was observed. The acceleration energy dependence of the detected secondary ions implies the different ionization mechanisms on the different substrates.

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, P. L.; Smagina, J. V.; Vlasov, D. Yu.

2011-12-23

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barriermore » 0.9 eV was obtained.« less

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Effect of divalent ions on the optical emission behavior of protein thin films

NASA Astrophysics Data System (ADS)

Bhowal, Ashim Chandra; Kundu, Sarathi

2016-05-01

Photoluminescence behaviors of proteinthin film, bovine serum albumin (BSA) have been studied in the presence of three divalent ions (Mg2+, Ca2+ and Ba2+) at different temperatures using fluorescence spectroscopy. Film thickness and morphology have been studied using atomic force microscopy. Variation of different physicochemical parameters like temperature, solvent polarity, pH, ionic strength, substrate binding etc. can make conformational changes in the protein structure and hence influences the emission behavior.In thin film conformation of BSA, dynamic quenching behavior has beenidentified in the presence of all the three divalent ions at pH≈ 5.5. Depending upon the charge density of the divalent ions interaction with protein molecules modifies and as a result quenching efficiency varies. Also after heat treatment, conformation of the protein molecules changes and as a result the quenching efficiency enhances than that of the unheated films. Studies on such protein-ion interactions and conformational variation may explore various functions of protein when it will adsorb on soft surfaces like membranes, vesicles, etc.

Ion-/proton-conducting apparatus and method

DOEpatents

Yates, Matthew [Penfield, NY; Liu, Dongxia [Rochester, NY

2011-05-17

A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600.degree. C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors.

Solid-state lithium battery

DOEpatents

Ihlefeld, Jon; Clem, Paul G; Edney, Cynthia; Ingersoll, David; Nagasubramanian, Ganesan; Fenton, Kyle Ross

2014-11-04

The present invention is directed to a higher power, thin film lithium-ion electrolyte on a metallic substrate, enabling mass-produced solid-state lithium batteries. High-temperature thermodynamic equilibrium processing enables co-firing of oxides and base metals, providing a means to integrate the crystalline, lithium-stable, fast lithium-ion conductor lanthanum lithium tantalate (La.sub.1/3-xLi.sub.3xTaO.sub.3) directly with a thin metal foil current collector appropriate for a lithium-free solid-state battery.

Superconducting properties of ion-implanted gold-silicon thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.

The superconducting properties of thin Au{sub x}Si{sub 1{minus}x}, films prepared by ion beam implantation and ion beam mixing are studied. The films are prepared by evaporation of single Au layers on Si substrates and mixing them with Si, Ar, or Xe, or by Xe beam mixing of alternate multilayers of Au and Si sputtered on Al{sub 2}O{sub 3} substrates. The superconducting transition temperature and upper critical fields are determined by measuring the temperature and magnetic field dependence of resistivity. Temperatures as low as 20mK and magnetic fields as high as 8 T were used. Superconductivity in these films is discussedmore » in connection with metastable metallic phases that are reportedly produced in the Au-Si system by high quenching rate preparation techniques like quenching from the vapor or the melt or ion implantation. Preliminary structural studies provide evidence for the existence of these phases and near-edge X-ray absorption and X-ray photoelectron spectroscopy measurements indicate a metallic type of bonding from which compound formation is inferred. The quality of the films is strongly dependent on the conditions of implantation. The maximum superconducting transition temperature attained is about 1.2 K. The upper critical fields have a maximum of 6T. An unusual double transition in the field dependence of resistivity is observed at low temperatures. The effect is very pronounced at compositions near x = 0.5 where the maximum {Tc} occurs. A model is presented to explain this result which invokes the properties of the metastable metallic phases and assumes the formation of more than two such phases in the same sample as the implantation dose increases. The Si-Au interface plays an important role in understanding the model and in interpreting the results of this thesis in general.« less

Effect of heat treatment on phase composition and crystal structure of thin WSi2 films on silicon substrates

NASA Astrophysics Data System (ADS)

Biryukov, Y. P.; Dostanko, A. P.; Maltsev, A. A.; Shakhlevich, G. M.

1984-10-01

An experimental study of WSi2 films on silicon substrates with either 111 or 100 orientation was made, for the purpose of determining the effect of annealing by heat treatment on their phase composition and crystal structure. Films of 0.2 micron thickness were deposited at a rate of 0.5 nm/s on a silicon surface which was predecontaminated of SiO2 layers and adsorbate atoms by ion sputtering in one vacuum cycle. Deposition was by condensation, with the substrate held at various temperatures from 390 to 500 C, and then annealed in an argon atmosphere at various temperatures from 700 to 1000 C for 30 min. Subsequent phase analysis at room temperature was performed with a DRON-2 X-ray diffractometer, using a CuK (sub alpha)-radiation source and covering the 20 = 10 to 130 deg range of angles by the Debye-Sherer method, while the surface morphology was examined under an electron microscope.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

PubMed

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

NASA Astrophysics Data System (ADS)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Effect of annealing high-dose heavy-ion irradiated high-temperature superconductor wires

NASA Astrophysics Data System (ADS)

Strickland, N. M.; Wimbush, S. C.; Kluth, P.; Mota-Santiago, P.; Ridgway, M. C.; Kennedy, J. V.; Long, N. J.

2017-10-01

Heavy-ion irradiation of high-temperature superconducting thin films has long been known to generate damage tracks of amorphized material that are of close-to-ideal dimension to effectively contribute to pinning of magnetic flux lines and thereby enhance the in-field critical current. At the same time, though, the presence of these tracks reduces the superconducting volume fraction available to transport current while the irradiation process itself generates oxygen depletion and disorder in the remaining superconducting material. We have irradiated commercially available superconducting coated conductors consisting of a thick film of (Y,Dy)Ba2Cu3O7 deposited on a buffered metal tape substrate in a continuous reel-to-reel process. Irradiation was by 185 MeV 197Au ions. A high fluence of 3 × 1011 ions/cm2 was chosen to emphasize the detrimental effects. The critical current was reduced following this irradiation, but annealing at relatively low temperatures of 200 °C and 400 °C substantially restore the critical current of the irradiated material. At high fields and high temperatures there is a net benefit of critical current compared to the untreated material.

Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

NASA Astrophysics Data System (ADS)

Scarel, G.; Ferrari, S.; Spiga, S.; Wiemer, C.; Tallarida, G.; Fanciulli, M.

2003-07-01

Zirconium dioxide films are grown in 200 atomic layer deposition cycles. Zirconium tetrachloride (ZrCl4) and water (H2O) are used as precursors. A relatively high dielectric constant (κ=22), wide band gap, and conduction band offset (5.8 and 1.4 eV, respectively) indicate that zirconium dioxide is a most promising substitute for silicon dioxide as a dielectric gate in complementary metal-oxide-semiconductor devices. However, crystallization and chlorine ions in the films might affect their electrical properties. These ions are produced during atomic layer deposition in which the ZrCl4 precursor reacts with the growth surface. It is desirable to tune the composition, morphology, and structural properties in order to improve their benefit on the electrical ones. To address this issue it is necessary to properly choose the growth parameters. This work focuses on the effects of the growth temperature Tg. ZrO2 films are grown at different substrate temperatures: 160, 200, 250, and 350 °C. Relevant modification of the film structure with a change in substrate temperature during growth is expected because the density of reactive sites [mainly Si+1-(OH)-1 bonds] decreases with an increase in temperature [Y. B. Kim et al., Electrochem. Solid-State Lett. 3, 346 (2000)]. The amorphous film component, for example, that develops at Si+1-(OH)-1 sites on the starting growth surface, is expected to decrease with an increase in growth temperature. The size and consequences of film property modifications with the growth temperature are investigated in this work using x-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry is used to study contaminant species in the films. From capacitance-voltage (CV) and current-voltage (IV) measurements, respectively, the dielectric constant κZrO2 and the leakage current are studied as a function of the film growth temperature.

Antiphase boundaries on low-energy-ion bombarded Ge(001)

NASA Astrophysics Data System (ADS)

Zandvliet, H. J. W.; de Groot, E.

1997-01-01

Surface vacancy and adatom clusters have been created on Ge(001) by bombarding the surface with 800 eV argon ions at various substrate temperatures ranging from room temperature to 600 K. The vacancies preferentially annihilate at the ends rather than at the sides of the dimer rows, resulting in monolayer deep vacancy islands which are elongated in a direction of the dimer rows of the upper terrace. As vacancy islands nucleate and expand, the dimer rows in neighbouring vacancy islands need not, in general, align with each other. An antiphase boundary will develop if two growing vacancy islands meet, but their internal dimer rows are not in the same registry. In contrast to Si(001), where only one type of antiphase boundary is found, we have found three different types of antiphase boundaries on Ge(001). Higher dose (> several monolayers) room temperature ion bombardment followed by annealing at temperatures in the range 400-500 K results in a surface which contains a high density of valleys. In addition to the preference for the annihilation of dimer vacancies at descending versus ascending steps we also suggest that the development of antiphase boundaries drives the roughening of this surface. Finally, several atomic rearrangement events, which might be induced by the tunneling process, are observed after low-dose ion bombardment at room temperature.

Aqueous solution epitaxy of CdS layers on CuInSe 2

NASA Astrophysics Data System (ADS)

Furlong, M. J.; Froment, M.; Bernard, M. C.; Cortès, R.; Tiwari, A. N.; Krejci, M.; Zogg, H.; Lincot, D.

1998-09-01

Epitaxial CdS thin films have been deposited from an aqueous ammonia solution containing cadmium ions and thiourea as precursors on single crystalline CuInSe 2 films prepared by MBE on Si(1 1 1) and GaAs(1 0 0) substrates. The structure and quality of the films were investigated by RHEED, glancing angle XRD and HRTEM in cross-section. The films are cubic on (1 0 0) substrates, and mixed cubic and hexagonal on (1 1 1) substrates due to the presence of stacking faults parallel to the substrate. The growth is under surface kinetic control with an activation energy of 85 kJ mol -1. Epitaxy improves with increasing temperature and an epitaxial transition temperature at approx. 60°C is demonstrated in the selected experimental conditions. The epitaxy is very sensitive to the preparation of the surface. Beneficial effects of in situ or ex situ chemical etching are found. Similarities between aqueous solution and vapor-phase chemical depositions are pointed out.

Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics.

PubMed

Imaoka, Takane; Okada, Takeru; Samukawa, Seiji; Yamamoto, Kimihisa

2017-12-06

The nitridation reaction is significantly important to utilize the unique properties of nitrides and nitrogen-doped materials. However, nitridation generally requires a high temperature or highly reactive reagents (often explosive) because the energies of N-N bond cleavage and nitrogen anion formation (N 3- ) are very high. We demonstrate the first room-temperature synthesis of GaN directly from GaCl 3 by nanoscale atom exchange reaction. Nonequilibrium nitrogen molecules with very high translational energy were used as a chemically stable and safe nitrogen source. The irradiation of molecular nitrogen to the desired reaction area successfully provided a gallium nitride (GaN) nanosheet that exhibited a typical photoluminescence spectrum. Because this process retains the target substrate room temperature and does not involve any photon nor charged ion, it allows damage-less synthesis of the semiconducting metal nitrides, even directly on plastic substrates such as polyethylene terephthalate (PET).

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

Buried superconducting layers comprised of magnesium diboride nanocrystals formed by ion implantation

NASA Astrophysics Data System (ADS)

Zhai, H. Y.; Christen, H. M.; White, C. W.; Budai, J. D.; Lowndes, D. H.; Meldrum, A.

2002-06-01

Superconducting layers of MgB2 were formed on Si substrates using techniques that are widely used and accepted in the semiconductor industry. Mg ions were implanted into boron films deposited on Si or Al2O3 substrates. After a thermal processing step, buried superconducting layers comprised of MgB2 nanocrystals were obtained which exhibit the highest Tc reported so far for MgB2 on silicon (Tconsetapproximately33.6 K, DeltaTc=0.5 K, as measured by current transport). These results show that our approach is clearly applicable to the fabrication of superconducting devices that can be operated at much higher temperatures (approximately20 K) than the current Nb technology (approximately6 K) while their integration with silicon structures remains straight-forward.

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films.

PubMed

Kerrigan, Marissa M; Klesko, Joseph P; Blakeney, Kyle J; Winter, Charles H

2018-04-25

We report the growth of nickel metal films by atomic layer deposition (ALD) employing bis(1,4-di- tert-butyl-1,3-diazadienyl)nickel and tert-butylamine as the precursors. A range of metal and insulating substrates were explored. An initial deposition study was carried out on platinum substrates. Deposition temperatures ranged from 160 to 220 °C. Saturation plots demonstrated self-limited growth for both precursors, with a growth rate of 0.60 Å/cycle. A plot of growth rate versus substrate temperature showed an ALD window from 180 to 195 °C. Crystalline nickel metal was observed by X-ray diffraction for a 60 nm thick film deposited at 180 °C. Films with thicknesses of 18 and 60 nm grown at 180 °C showed low root mean square roughnesses (<2.5% of thicknesses) by atomic force microscopy. X-ray photoelectron spectroscopies of 18 and 60 nm thick films deposited on platinum at 180 °C revealed ionizations consistent with nickel metal after sputtering with argon ions. The nickel content in the films was >97%, with low levels of carbon, nitrogen, and oxygen. Films deposited on ruthenium substrates displayed lower growth rates than those observed on platinum substrates. On copper substrates, discontinuous island growth was observed at ≤1000 cycles. Film growth was not observed on insulating substrates under any conditions. The new nickel metal ALD procedure gives inherently selective deposition on ruthenium and platinum from 160 to 220 °C.

Surface and grain boundary interdiffusion in nanometer-scale LSMO/BFO bilayer

NASA Astrophysics Data System (ADS)

Kumar, Virendra; Gaur, Anurag; Choudhary, R. J.; Gupta, Mukul

2016-05-01

Epitaxial 150 nm thick LSMO/BFO bilayer is deposited on STO (100) substrate by pulsed laser deposition, to study magnetoelectric effect. Unexpected low value of room temperature magnetization in bilayer indicates towards the possibility of interdiffusion. Further, sharp fall in the value of TC (53 K) also added our anxiety towards possible interdiffusion in BFO/LSMO system. Low-angle x-ray diffraction technique is used to investigate interdiffusion phenomena, and the temperature-dependent interdiffusivity is obtained by accurately monitoring the decay of the first-order modulation peak as a function of annealing time. It has been found that the diffusivity at different temperatures follows Arrhenius-type behavior. X-ray reflection (XRR) pattern obtained for the bilayer could not be fitted in the Parratt's formalism, which confirms the interdiffusion in it. Depth profiles of 209Bi, 56Fe ions measured by secondary ion mass spectroscope (SIMS) further substantiate the diffusion of these ions from upper BFO layer into lower LSMO layer.

Ion-conducting ceramic apparatus, method, fabrication, and applications

DOEpatents

Yates, Matthew [Penfield, NY; Liu, Dongxia [Rochester, NY

2012-03-06

A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600.degree. C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors.

Electrospun Nanofiber-Coated Membrane Separators for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Lee, Hun

Lithium-ion batteries are widely used as a power source for portable electronic devices and hybrid electric vehicles due to their excellent energy and power densities, long cycle life, and enhanced safety. A separator is considered to be the critical component in lithium-ion rechargeable batteries. The separator is placed between the positive and negative electrodes in order to prevent the physical contact of electrodes while allowing the transportation of ions. In most commercial lithium-ion batteries, polyolefin microporous membranes are commonly used as the separator due to their good chemical stability and high mechanical strength. However, some of their intrinsic natures, such as low electrolyte uptake, poor adhesion property to the electrodes, and low ionic conductivity, can still be improved to achieve higher performance of lithium-ion batteries. In order to improve these intrinsic properties, polyolefin microporous membranes can be coated with nanofibers by using electrospinning technique. Electrospinning is a simple and efficient method to prepare nanofibers which can absorb a significant amount of liquid electrolyte to achieve low internal resistance and battery performance. This research presents the preparation and investigation of composite membrane separators prepared by coating nanofibers onto polyolefin microporous membranes via electrospinning technique. Polyvinylidene fluoride polymers and copolymers were used for the preparation of electrospun nanofiber coatings because they have excellent electrochemical stability, good adhesion property, and high temperature resistance. The nanofiber coatings prepared by electrospinning form an interconnected and randomly orientated structure on the surface of the polyolefin microporous membranes. The size of the nanofibers is on a scale that does not interfere with the micropores in the membrane substrates. The resultant nanofiber-coated membranes have the potential to combine advantages of both the polyolefin separator membranes and the nanoscale fibrous polymer coatings. The polyolefin microporous membranes serve as the supporting substrate which provides the required mechanical strength for the assembling process of lithium-ion batteries. The electrospun nanofiber coatings improve the wettability of the composite membrane separators to the liquid electrolyte, which is desirable for the lithium-ion batteries with high kinetics and good cycling performance. The results show that the nanofiber-coated membranes have enhanced adhesion properties to the battery electrode which can help prevent the formation of undesirable gaps between the separators and electrodes during prolonged charge-discharge cycles, especially in large-format batteries. The improvement on adhesive properties of nanofiber-coated membranes was evaluated by peel test. Nanofiber coatings applied to polyolefin membrane substrates improve the adhesion of separator membranes to battery electrodes. Electrolyte uptakes, ionic conductivities and interfacial resistances of the nanofiber-coated membrane separators were studied by soaking the membrane separators with a liquid electrolyte solution of 1 M lithium hexafluorophosphate dissolved in ethylene carbonate/dimethylcarbonate/ethylmethyl carbonate (1:1:1 vol). The nanofiber coatings on the surface of the membrane substrates increase the electrolyte uptake capacity due to the high surface area and capillary effect of nanofibers. The nanofiber-coated membranes soaked in the liquid electrolyte solution exhibit high ionic conductivities and low interfacial resistances to the lithium electrode. The cells containing LiFePO 4 cathode and the nanofiber-coated membranes as the separator show high discharge specific capacities and good cycling stability at room temperature. The nanofiber coatings on the membrane substrates contribute to high ionic conductivity and good electrochemical performance in lithium-ion batteries. Therefore, these nanofiber-coated composite membranes can be directly used as novel battery separators for high performance of lithium-ion batteries. Coating polyolefin microporous membranes with electrospun nanofibers is a promising approach to obtain highperformance separators for advanced lithium-ion batteries.

Copper-doped waveguides in glass substrates

NASA Astrophysics Data System (ADS)

Spirkova-Hradilova, Jarmila; Tresnakova-Nebolova, Pavlina; Jirka, Ivan; Mach, Karel; Perina, Vratislav; Mackova, Anna; Kuncova, Gabriela

2001-05-01

We have studied fabrication and properties of copper ion- exchanged waveguides fabricated in various types of special soda-lime silicate glass as well as commercial optical glass substrates. The ion exchange was performed in melts containing either CuI or CuII at temperatures from 350 degrees C to 500 degrees C for times ranging from 5 minutes to 21 hrs. Optical properties of the fabricated waveguides were studied using mode spectroscopy and photoluminescence spectroscopy and composition of the waveguides was determined by SEM, RBS, EPR and ESCA. After the ion exchange the refractive index increased, according to fabrication conditions, up to (Delta) n equals +0.0693 and the guides supported up to 16 TE and TM modes. The CuI $ARLR CuII redox reaction during the fabrication depended strongly on the composition as well as the temperature of the reaction melts. In the Cu2Cl2ZnCl2 melts the oxidation of CuI to CuII was strongly hampered, so that CuI prevailed in the waveguiding region. These samples exhibited the most intensive blue-green luminescence, in spite of those fabricated using the CuII-based reaction melts, where practically no blue-green luminescence was observed. ESCA measurement revealed an easy charge transfer between the both oxidation states of copper in the very surface regions of the samples.

Influence of Nb doping on the phase transition properties of VO2 thin films prepared by ion beam co-sputtering deposition

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Pengfei; Zhao, Lite; Liu, Jiahuan

2016-03-01

The Nb-doped VO2 thin films were successfully prepared on the glass substrates by ion beam co-sputtering at room temperature and post annealing under the air condition. The effects of the preparation processing and Nb doping on the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by resistancetemperature measurement. The results show that Nb doping significantly changes the surface morphologies of VO2 thin films, and Nb-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with pure VO2, the phase transition temperature of Nb-doped VO2 thin films drops to 40 ºC, and the width of thermal hysteresis loop narrows to 8 ºC. It is demonstrated that Nb-doped VO2 thin films prepared by ion beam co-sputtered at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition.

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Dopant profile modeling by rare event enhanced domain-following molecular dynamics

DOEpatents

Beardmore, Keith M.; Jensen, Niels G.

2002-01-01

A computer-implemented molecular dynamics-based process simulates a distribution of ions implanted in a semiconductor substrate. The properties of the semiconductor substrate and ion dose to be simulated are first initialized, including an initial set of splitting depths that contain an equal number of virtual ions implanted in each substrate volume determined by the splitting depths. A first ion with selected velocity is input onto an impact position of the substrate that defines a first domain for the first ion during a first timestep, where the first domain includes only those atoms of the substrate that exert a force on the ion. A first position and velocity of the first ion is determined after the first timestep and a second domain of the first ion is formed at the first position. The first ion is split into first and second virtual ions if the first ion has passed through a splitting interval. The process then follows each virtual ion until all of the virtual ions have come to rest. A new ion is input to the surface and the process repeats until all of the ion dose has been input. The resulting ion rest positions form the simulated implant distribution.

Thin sol-gel-derived silica coatings on dental pure titanium casting.

PubMed

Yoshida, K; Kamada, K; Sato, K; Hatada, R; Baba, K; Atsuta, M

1999-01-01

The sol-gel dipping process, in which liquid silicon alkoxide is transformed into a solid silicon-oxygen network, can produce a thin film coating of silica (SiO(2)). The features of this method are high homogeneity and purity of the thin SiO(2) film and a low sinter temperature, which are important in the preparation of coating films that can protect metallic ion release from the metal substrate and prevent attachment of dental plaque. We evaluated the surface properties of dental pure titanium casting coated with a thin SiO(2) or SiO(2)/F-hybrid film by the sol-gel dipping process. The metal specimens were pretreated by dipping in isopropylalcohol solution containing 10 wt% 3-aminopropyl trimethoxysilane and treated by dipping in the silica precursor solution for 5 min, withdrawal at a speed of 2 mm/min, air-drying for 20 min at room temperature, heating at 120 degrees C for 20 min, and then storing at room temperature. Both SiO(2) and SiO(2)/F films bonded strongly (above 55 MPa) to pure titanium substrate by a tensile test. SiO(2(-)) and SiO(2)/F-coated specimens immersed in 1 wt% of lactic acid solution for two weeks showed significantly less release of titanium ions (30. 5 ppb/cm(2) and 9.5 ppb/cm(2), respectively) from the substrate than noncoated specimens (235.2 ppb/cm(2)). Hydrophobilization of SiO(2(-)) and SiO(2)/F-coated surfaces resulted in significant increases of contact angle of water (81.6 degrees and 105.7 degrees, respectively) compared with noncoated metal specimens (62.1 degrees ). The formation of both thin SiO(2) and SiO(2)/F-hybrid films by the sol-gel dipping process on the surface of dental pure titanium casting may be useful clinically in enhancing the bond strength of dental resin cements to titanium, preventing titanium ions release from the substrate, and reducing the accumulation of dental plaque attaching to intraoral dental restorations. Copyright 1999 John Wiley & Sons, Inc.

Growth of rutile TiO2 nanorods in Ti and Cu ion sequentially implanted SiO2 and the involved mechanisms

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Liu, Xiaoyu; Wang, Xiaohu; Dai, Haitao; Liu, Changlong

2018-01-01

TiO2 in nanoscale exhibits unique physicochemical and optoelectronic properties and has attracted much more interest of the researchers. In this work, TiO2 nanostructures are synthesized in amorphous SiO2 slices by implanting Ti ions, or sequentially implanting Ti and Cu ions combined with annealing at high temperature. The morphology, structure, spatial distribution and optical properties of the formed nanostructures have been investigated in detail. Our results clearly show that the thermal growth of TiO2 nanostructures in SiO2 substrate is significantly enhanced by presence of post Cu ion implantation, which depends strongly on the applied Cu ion fluence, as well as the annealing atmosphere. Due to the formation of Cu2O in the substrate, rutile TiO2 nanorods of large size have been well fabricated in the Ti and Cu sequentially implanted SiO2 after annealing in N2 atmosphere, in which Cu2O plays a role as a catalyst. Moreover, the sample with well-fabricated TiO2 nanorods exhibits a narrowed band gap, an enhanced optical absorption in visible region, and catalase-/peroxidase-like catalytic characteristics. Our findings provide an effective route to fabricate functional TiO2 nanorods in SiO2 via ion implantation.

Electrodeposition of titania and barium titanate thin films for high dielectric applications

NASA Astrophysics Data System (ADS)

Roy, Biplab Kumar

In order to address the requirement of a low-temperature low-cost cost processing for depositing high dielectric constant ceramic films for applications in embedded capacitor and flexible electronics technology, two different chemical bath processes, namely, thermohydrolytic deposition (TD) and cathodic electrodeposition (ED) have been exploited to generate titania thin films. In thermohydrolytic deposition technique, titania films were generated from acidic aqueous solution of titanium chloride on F: SnO2 coated glass and Si substrates by temperature assisted hydrolysis mechanism. On the other hand, in cathodic electrodeposition, in-situ electro-generation of hydroxyl ions triggered a fast deposition of titania on conductive substrates such as copper and F: SnO2 coated glass from peroxotitanium solution at low temperatures (˜0°C). In both techniques, solution compositions affected the morphology and crystallinity of the films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques have been employed to perform such characterization. As both processes utilized water as solvent, the as-deposited films contained hydroxyl ligand or physically adsorbed water molecules in the titania layer. Besides that, electrodeposited films contained peroxotitanium bonds which were characterized by FTIR studies. Although as-electrodeposited titania films were X-ray amorphous, considerable crystallinity could be generated by heat treatment. The films obtained from both the processes showed v moderately high dielectric constant (ranging from 9-30 at 100 kHz) and high breakdown voltage (0.09-0.15 MV/cm) in electrical measurements. To further improve the dielectric constant, electrodeposited titania films were converted to barium titanate films in high pH barium ion containing solution at 80-90°C. The resultant film contained cubic crystalline barium titanate verified by XRD analysis. Simple low-temperature hydrothermal technique of conversion worked perfect for F:SnO2 coated glass substrates, but in this process, high pH precursor caused corrosion in copper substrates and deposition of copper oxide in the final films. To overcome this, an innovative technique, which incorporates an electrochemical protection of substrates by application of cathodic potential in addition to common hydrothermal conversion, has been adopted. Films generated by common hydrothermal technique on F:SnO 2/glass substrates and via electrochemical-hydrothermal technique on Cu substrates showed promising dielectric behavior. Apart from the experimental studies, this report also includes various thermodynamic studies related to hydrolysis and precipitation of titanium ion, protection of copper during titania deposition and barium titanate conversion. Gibbs free energy based model and speciation studies were used to understand supersaturation which is a controlling factor in thermohydrolytic deposition. Similar approaches were utilized to understand the possibilities of barium titanate formation at different Ba2+ concentrations with different pH conditions. Possibilities of atmospheric carbon dioxide incorporation to generate barium carbonate instead of barium titanate formation were also determined by mathematical calculations. Whenever relevant, results of such theoretical analysis were utilized to design the experiment or to explain the experimental observations.

The cataphoretic emitter effect exhibited in high intensity discharge lamp electrodes

NASA Astrophysics Data System (ADS)

Mentel, Juergen

2018-01-01

A mono-layer of atoms, electropositive with respect to the substrate atoms, forms a dipole layer, reducing its work function. Such a layer is generated by diffusion of emitter material from the interior of the substrate, by vapour deposition or by deposition of emitter material onto arc electrodes by cataphoresis. This cataphoretic emitter effect is investigated within metal halide lamps with transparent YAG ceramic burners, and within model lamps. Within the YAG lamps, arcs are operated with switched-dc current between rod shaped tungsten electrodes in high pressure Hg vapour seeded with metal iodides. Within the model lamps, dc arcs are operated between rod-shaped tungsten electrodes—one doped—in atmospheric pressure Ar. Electrode temperatures are determined by 1λ -pyrometry, combined with simulation of the electrode heat balance. Plasma temperatures, atom and ion densities of emitter material are determined by emission and absorption spectroscopy. Phase resolved measurements in YAG lamps seeded with CeI3, CsI, DyI3, TmI3 and LaI3 show, within the cathodic half period, a reduction of the electrode temperature and an enhanced metal ion density in front of the electrode, and an opposite behavior after phase reversal. With increasing operating frequency, the state of the cathode overlaps onto the anodic phase—except for Cs, being low in adsorption energy. Generally, the phase averaged electrode tip temperature is reduced by seeding a lamp with emitter material; its height depends on admixtures. Measurements at tungsten electrodes doped with ThO2, La2O3 and Ce2O3 within the model lamp show that evaporated emitter material is redeposited by an emitter ion current onto the electrode surface. It reduces the work function of tungsten cathodes above the evaporation temperature of the emitter material, too; and also of cold anodes, indicating a field reversal in front of them. The formation of an emitter spot at low cathode temperature and high emitter material density is traced back to a locally reduced work function generated by a locally enhanced emitter ion current density.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Development of nano-fabrication technique utilizing self-organizational behavior of point defects induced by ion irradiation

NASA Astrophysics Data System (ADS)

Nitta, Noriko; Taniwaki, Masafumi

2006-04-01

The present authors proposed a novel nano-fabrication technique that is able to arrange the fine cells orderly, based on their finding in GaSb implanted at a low temperature. In this article, first the experimental results that anomalous cellular structure was formed in GaSb by ion implantation is introduced and the self-organizational formation mechanism of the structure is described. Next a nano-fabrication technique that utilizes focused ion beam is described. This technique consists of two procedures, i.e. the formation process of the voids array and the development of the initial array to ordered cellular structure. Finally, the nano-fabrication is actually performed by this technique and their results are reported. Fabrication succeeded in structures where the dot (cell) interval was 100 nm or larger. The minimum ion dose for initial voids which develops to the ordered cellular structure is evaluated. It is also shown that the substrate temperature during implantation is an essential parameter for this technique.

Tribological properties of ceramic-(Ti3Al-Nb) sliding couples for use as candidate seal materials to 700 C

NASA Technical Reports Server (NTRS)

Dellacorte, Christhopher; Steinetz, Bruce M.; Brindley, Pamela K.

1990-01-01

Tribological properties of Ti3Al-Nb intermetallic disks sliding against alumina-boria-silicate fabric were ascertained in air at temperatures from 25 to 700 C. These materials are candidates for sliding seal applications for the National AeroSpace Plane. The tests were done using a pin on disk tribometer. Sliding was unidirectional at 0.27 m/sec under a nominal contact stress of 340 kPa. Gold sputter or ion plating deposited films were used to reduce friction and wear. Rhodium and palladium films were used beneath the gold lubricating films to prevent diffusion of the substrate into the gold at high temperature. The friction and wear of the unlubricated specimens was unacceptable. Friction coefficients were generally greater than 1.0. The ion plated gold films, when used with a rhodium diffusion barrier reduced friction by almost a factor of 2. Wear was also substantially reduced. The sputter deposited films were not adherent unless the substrate was sputter cleaned immediately prior to film deposition. Palladium did not function as a diffusion barrier.

Tribological properties of ceramic/Ti3Al-Nb sliding couples for use as candidate seal materials to 700 deg C

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher; Steinetz, Bruce M.; Brindley, Pamela K.

1989-01-01

Tribological properties of Ti3Al-Nb intermetallic disks sliding against alumina-boria-silicate fabric were ascertained in air at temperatures from 25 to 700 C. These materials are candidates for sliding seal applications for the National AeroSpace Plane. The tests were done using a pin on disk tribometer. Sliding was unidirectional at 0.27 m/sec under a nominal contact stress of 340 kPa. Gold sputter or ion plating deposited films were used to reduce friction and wear. Rhodium and palladium films were used beneath the gold lubricating films to prevent diffusion of the substrate into the gold at high temperature. The friction and wear of the unlubricated specimens was unacceptable. Friction coefficients were generally greater than 1.0. The ion plated gold films, when used with a rhodium diffusion barrier reduced friction by almost a factor of 2. Wear was also substantially reduced. The sputter deposited films were not adherent unless the substrate was sputter cleaned immediately prior to film deposition. Palladium did not function as a diffusion barrier.

Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tucker, Mark D., E-mail: martu@ifm.liu.se; Broitman, Esteban; Näslund, Lars-Åke

Carbon and carbon nitride films (CN{sub x}, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CN{sub x} films, was observed in films deposited at 175 °C and above, with N{sub 2} pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradualmore » transition from majority sp{sup 3}-hybridized films to sp{sup 2} films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CN{sub x} films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.« less

Thin Film Deposition Using Energetic Ions

PubMed Central

Manova, Darina; Gerlach, Jürgen W.; Mändl, Stephan

2010-01-01

One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes. PMID:28883323

Passivated contact formation using ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Stradins, Pauls; Nemeth, William

2018-05-29

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

p-type zinc-blende GaN on GaAs substrates

NASA Astrophysics Data System (ADS)

Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoç, H.

1993-08-01

We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.

Investigation of the silicon ion density during molecular beam epitaxy growth

NASA Astrophysics Data System (ADS)

Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

2002-05-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

Role of Disproportionation in the Dissolution of Mn from Lithium Manganate Spinel

DOE PAGES

Benedek, Roy

2017-09-18

Dissolution of Mn from lithium-manganese spinel has hindered its commercialization as a cathode material in Li-ion batteries. Disproportionation of near-surface Mn(III), in the presence of acid, has been widely thought to result in dissolved divalent Mn. To what extent stray acidic water in the cell (as opposed to the organic electrolyte) acts as the solvent for Mn ions has not been established. Simulations by Leung show that a small displacement of trivalent Mn from its equilibrium site at an LiMn 2O 4 (001)/ ethylene carbonate interface leads to its reduction to Mn(II). In the present work, Thermodynamic Integration is performed,more » based on first-principles molecular dynamics simulations within the Blue-Moon ensemble, for the detachment of Mn(III) ions at the LiMn 2O 4 (001)/water interface. The results show that reduction of Mn(III) to Mn(II) occurs also in the case of an aqueous interface. The simulations were performed for both neutral and acidic water (in the presence of HF), with the coordination number of the dissolving Mn ion with substrate oxygen ions taken as the reaction coordinate. The simulations indicate that an F - ion strongly binds to a surface Mn(III) ion, and weakens its adhesion to the substrate. Owing to this weakening, a surface Mn-F complex traverses regions of phase space at room temperature where disproportionation becomes energetically favorable. Although this disproportionation occurs close to the substrate, where the Mn coordination number is only slightly lowered from its equilibrium value, we argue that the likelihood of reattachment after disproportionation is small (Leung arrived at a similar interpretation in the case of the LiMn 2O 4 (001)/ EC interface). We suggest that the critical role of F - in promoting dissolution is to weaken the Mn binding to the substrate so as to enable disproportionation. The partially detached MnF complex may then undergo additional interaction with the solvent to form, e.g., MnF 2, which would enable transport away from the substrate. In conclusion, the EPR measurements by Shilina et al. which appear to show Mn(III) as the predominant solvated species are discussed.« less

Cryogenic measurements of mechanical loss of high-reflectivity coating and estimation of thermal noise.

PubMed

Granata, Massimo; Craig, Kieran; Cagnoli, Gianpietro; Carcy, Cécile; Cunningham, William; Degallaix, Jérôme; Flaminio, Raffaele; Forest, Danièle; Hart, Martin; Hennig, Jan-Simon; Hough, James; MacLaren, Ian; Martin, Iain William; Michel, Christophe; Morgado, Nazario; Otmani, Salim; Pinard, Laurent; Rowan, Sheila

2013-12-15

We report on low-frequency measurements of the mechanical loss of a high-quality (transmissivity T<5 ppm at λ(0)=1064 nm, absorption loss <0.5 ppm) multilayer dielectric coating of ion-beam-sputtered fused silica and titanium-doped tantala in the 10-300 K temperature range. A useful parameter for the computation of coating thermal noise on different substrates is derived as a function of temperature and frequency.

Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

NASA Astrophysics Data System (ADS)

Lehnert, Jan; Spemann, Daniel; Hamza Hatahet, M.; Mändl, Stephan; Mensing, Michael; Finzel, Annemarie; Varga, Aron; Rauschenbach, Bernd

2017-06-01

In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ˜900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

1987-03-24

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

Growth of oxide exchange bias layers

DOEpatents

Chaiken, Alison; Michel, Richard P.

1998-01-01

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

Growth of oxide exchange bias layers

DOEpatents

Chaiken, A.; Michel, R.P.

1998-07-21

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

Salt-Driven Deposition of Thermoresponsive Polymer-Coated Metal Nanoparticles on Solid Substrates.

PubMed

Zhang, Zhiyue; Maji, Samarendra; da Fonseca Antunes, André B; De Rycke, Riet; Hoogenboom, Richard; De Geest, Bruno G

2016-06-13

Here we report on a simple, generally applicable method for depositing metal nanoparticles on a wide variety of solid surfaces under all aqueous conditions. Noble-metal nanoparticles obtained by citrate reduction followed by coating with thermoresponsive polymers spontaneously form a monolayer-like structure on a wide variety of substrates in presence of sodium chloride whereas this phenomenon does not occur in salt-free medium. Interestingly, this phenomenon occurs below the cloud point temperature of the polymers and we hypothesize that salt ion-induced screening of electrostatic charges on the nanoparticle surface entropically favors hydrophobic association between the polymer-coated nanoparticles and a hydrophobic substrate. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

NASA Astrophysics Data System (ADS)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-02-01

Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

Method for forming metallic silicide films on silicon substrates by ion beam deposition

DOEpatents

Zuhr, Raymond A.; Holland, Orin W.

1990-01-01

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

The Ion-Assisted Deposition of Optical Thin Films

DTIC Science & Technology

1988-01-01

nitrogen ions (Martin et al. 1984b). The substrates were maintained at room temperature or at 300 °C. Films were deposited of the characteristic gold color...band matches that reported by Hass et al. (1959) for CeF3 films, with aborption bands at 210 nm, 220 nm, 235 nm, and 250 nm 03 corresponding to...onset of aborption than LaF 3 . This could be due to the relatively short-wavelength absorption edge of La20 3 (300 nm) in comparison to NdF3 (400 nm

Microstructured Electrolyte Membranes to Improve Fuel Cell Performance

NASA Astrophysics Data System (ADS)

Wei, Xue

Fuel cells, with the advantages of high efficiency, low greenhouse gas emission, and long lifetime are a promising technology for both portable power and stationary power sources. The development of efficient electrolyte membranes with high ionic conductivity, good mechanical durability and dense structure at low cost remains a challenge to the commercialization of fuel cells. This thesis focuses on exploring novel composite polymer membranes and ceramic electrolytes with the microstructure engineered to improve performance in direct methanol fuel cells (DMFCs) and solid oxide fuel cells (SOFCs), respectively. Polymer/particle composite membranes hold promise to meet the demands of DMFCs at lower cost. The structure of composite membranes was controlled by aligning proton conducting particles across the membrane thickness under an applied electric field. The field-induced structural changes caused the membranes to display an enhanced water uptake, proton conductivity, and methanol permeability in comparison to membranes prepared without an applied field. Although both methanol permeability and proton conductivity are enhanced by the applied field, the permeability increase is relatively lower than the proton conductivity improvement, which results in enhanced proton/methanol selectivity and improved DMFC performance. Apatite ceramics are a new class of fast ion conductors being studied as alternative SOFC electrolytes in the intermediate temperature range. An electrochemical/hydrothermal deposition method was developed to grow fully dense apatite membranes containing well-developed crystals with c-axis alignment to promote ion conductivity. Hydroxyapatite seed crystals were first deposited onto a metal substrate electrochemically. Subsequent ion substitution during the hydrothermal growth process promoted the formation of dense, fully crystalline films with microstructure optimal for ion transport. The deposition parameters were systematically investigated, such as reactant type, reagent concentration, solution pH, and reaction time. Dense apatite films were formed on palladium substrates that can serve as intermediate temperature fuel cell anodes. The novel apatite membrane structure is promising for fuel cell applications, as well as in improving the biocompatibility of orthopedic implants when coated on stainless steel or titanium substrates.

Heating power at the substrate, electron temperature, and electron density in 2.45 GHz low-pressure microwave plasma

NASA Astrophysics Data System (ADS)

Kais, A.; Lo, J.; Thérèse, L.; Guillot, Ph.

2018-01-01

To control the temperature during a plasma treatment, an understanding of the link between the plasma parameters and the fundamental process responsible for the heating is required. In this work, the power supplied by the plasma onto the surface of a glass substrate is measured using the calorimetric method. It has been shown that the powers deposited by ions and electrons, and their recombination at the surface are the main contributions to the heating power. Each contribution is estimated according to the theory commonly used in the literature. Using the corona balance, the Modified Boltzmann Plot (MBP) is employed to determine the electron temperature. A correlation between the power deposited by the plasma and the results of the MBP has been established. This correlation has been used to estimate the electron number density independent of the Langmuir probe in considered conditions.

Advanced fabrication of single-crystalline silver nanopillar on SiO{sub 2} substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Tomohiro, E-mail: tomohiro-mori@wakayama-kg.jp, E-mail: kenzo@eng.kagawa-u.ac.jp; Industrial Technology Center of Wakayama Prefecture, Ogura 60, Wakayama 649-6261; Tanaka, Yasuhiro

2016-01-25

Nanoscale crystallographic textures have received very little attention in research on surface plasmons using metallic nanostructures. A single-crystalline metallic nanostructure with a controlled crystallographic texture is expected to reduce optical losses. We elucidated the grain growth mechanism in silver thin films deposited on a highly transparent SiO{sub 2} substrate by electron backscatter diffraction methods with nanoscale resolution. At higher substrate temperatures, the grain growth was facilitated but the preferred orientation was not achieved. Moreover, we fabricated a single-crystalline silver nanopillar in a (111)-oriented large growing grain, which was controlled by varying the substrate temperature during film deposition by focused ion-beammore » milling. Furthermore, the light intensity of the scattering spectrum was measured for a single-crystalline silver nanopillar (undersurface diameter: 200 nm) for which surface plasmon resonance was observed. The single-crystalline silver nanopillar exhibits a stronger and sharper spectrum than the polycrystalline silver nanopillar. These results can be applied to the direct fabrication of a single-crystalline silver nanopillar using only physical processing.« less

Strain Evolution of Annealed Hydrogen-Implanted (0001) Sapphire

NASA Astrophysics Data System (ADS)

Wong, Christine Megan

Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that involves the annealing of hydrogen ion-implanted materials in order to initiate defect nucleation and growth leading to guided crack propagation. This study presents an investigation into the annealing process required to initiate blistering (an essential precursor to exfoliation) in (0001) sapphire implanted at room temperature with hydrogen ions. Triple axis x-ray diffraction was used to characterize the evolution of the implanted layer for single crystal (0001) sapphire substrates implanted at room temperature at 360 keV with either a 5x1016 cm -2 or 8x1016 cm-2 dose of hydrogen ions. A simulation of the ion distribution in TRIM estimated that the projected range and thickness of the implanted layer for both doses was approximately 2.2 mum. Following implantation, the implanted sapphire was annealed using a two-step annealing procedure. The first step was performed at a lower temperature, ideally to nucleate and coarsen defects. Temperatures investigated ranged from 550 - 650 °C. The second step was performed at a higher temperature (800 °C) to induce further defect coarsening and surface blistering. After all annealing steps, triple axis o/2theta and o scans were taken to observe any changes in the diffraction profile - namely, any reduction in the amplitude and shift in the location of the fringes associated with strain in the crystal - which would correlate with defect growth and nucleation. It was found that significant strain fringe reduction first occurred after annealing at 650 °C for 8 hours for both doses; however, it was not clear whether or not this strain reduction was due primarily to hydrogen diffusion or to recovery of other defects induced during the ion implantation. The o/2theta curves were then fit using Bede RADS in order to quantify the strain within the crystal and confirm the reduction of the strained layer within the crystal. Finally, Nomarski optical images of the sample surfaces were taken after each step to observe any visual changes or blistering that might have occurred. These optical images showed that the strain reduction observed using XRD did not correlate to blistering, as no blisters were observed in any of the optical images. Experimental results showed that at temperatures below 650 °C, no significant strain reduction occurs in hydrogen ion implanted (0001) sapphire. It has also been determined that for (0001) sapphire implanted at room temperature, it was not possible to produce surface blistering after a two-step annealing process at 650 °C and 800 °C, although significant strain reduction did occur, and ? scans showed peak broadening with subsequent annealing, indicating increasing mosaicity and potential defect nucleation. This was in contrast to previous findings that asserted that for sapphire annealed at 650 °C, surface blistering was observable. As previous findings were based on sapphire implanted at elevated temperatures, this may imply that the sapphire substrate reaches a higher temperature than expected during such implantation processes, which may account for the capability for surface blistering at a lower temperature. Conversely, for room temperature ion implantation, temperatures greater than 800 °C may be necessary to first nucleate hydrogen platelet defects and then produce surface blistering.

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean

Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

Reactive ion etched substrates and methods of making and using

DOEpatents

Rucker, Victor C [San Francisco, CA; Shediac, Rene [Oakland, CA; Simmons, Blake A [San Francisco, CA; Havenstrite, Karen L [New York, NY

2007-08-07

Disclosed herein are substrates comprising reactive ion etched surfaces and specific binding agents immobilized thereon. The substrates may be used in methods and devices for assaying or isolating analytes in a sample. Also disclosed are methods of making the reactive ion etched surfaces.

Modification of crystal anisotropy and enhancement of magnetic moment of Co-doped SnO2 thin films annealed under magnetic field

PubMed Central

2014-01-01

Co-doped SnO2 thin films were grown by sputtering technique on SiO2/Si(001) substrates at room temperature, and then, thermal treatments with and without an applied magnetic field (HTT) were performed in vacuum at 600°C for 20 min. HTT was applied parallel and perpendicular to the substrate surface. Magnetic M(H) measurements reveal the coexistence of a strong antiferromagnetic (AFM) signal and a ferromagnetic (FM) component. The AFM component has a Néel temperature higher than room temperature, the spin axis lies parallel to the substrate surface, and the highest magnetic moment m =7 μB/Co at. is obtained when HTT is applied parallel to the substrate surface. Our results show an enhancement of FM moment per Co+2 from 0.06 to 0.42 μB/Co at. for the sample on which HTT was applied perpendicular to the surface. The FM order is attributed to the coupling of Co+2 ions through electrons trapped at the site of oxygen vacancies, as described by the bound magnetic polaron model. Our results suggest that FM order is aligned along [101] direction of Co-doped SnO2 nanocrystals, which is proposed to be the easy magnetization axis. PMID:25489286

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02786a

Strong Eu2+ light emission in Eu silicate through Eu3+ reduction in Eu2O3/Si multilayer deposited on Si substrates

PubMed Central

2013-01-01

Eu2O3/Si multilayer nanostructured films are deposited on Si substrates by magnetron sputtering. Transmission electron microscopy and X-ray diffraction measurements demonstrate that multicrystalline Eu silicate is homogeneously distributed in the film after high-temperature treatment in N2. The Eu2+ silicate is formed by the reaction of Eu2O3 and Si layers, showing an intense and broad room-temperature photoluminescence peak centered at 610 nm. It is found that the Si layer thickness in nanostructures has great influence on Eu ion optical behavior by forming different Eu silicate crystalline phases. These findings open a promising way to prepare efficient Eu2+ materials for photonic application. PMID:23618344

Magnetic imaging of cyanide-bridged co-ordination nanoparticles grafted on FIB-patterned Si substrates.

PubMed

Ghirri, Alberto; Candini, Andrea; Evangelisti, Marco; Gazzadi, Gian Carlo; Volatron, Florence; Fleury, Benoit; Catala, Laure; David, Christophe; Mallah, Talal; Affronte, Marco

2008-12-01

Prussian blue CsNiCr nanoparticles are used to decorate selected portions of a Si substrate. For successful grafting to take place, the Si surface needs first to be chemically functionalized. Low-dose focused ion beam patterning on uniformly functionalized surfaces selects those portions that will not participate in the grafting process. Step-by-step control is assured by atomic force and high-resolution scanning electron microscopy, revealing a submonolayer distribution of the grafted nanoparticles. By novel scanning Hall-probe microscopy, an in-depth investigation of the magnetic response of the nanoparticles to varying temperature and applied magnetic field is provided. The magnetic images acquired suggest that low-temperature canted ferromagnetism is found in the grafted nanoparticles, similar to what is observed in the equivalent bulk material.

High temperature coefficient of resistance achieved by ion beam assisted sputtering with no heat treatment in V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vardi, Naor; Sharoni, Amos, E-mail: amos.sharoni@biu.ac.il

2015-11-15

Thermal imaging based on room temperature bolometer sensors is a growing market, constantly searching for improved sensitivity. One important factor is the temperature coefficient of resistance (TCR), i.e., the sensitivity of the active material. Herein, the authors report the improved TCR properties attainable by the “ion beam assisted deposition” method for room temperature deposition. V{sub y}M{sub 1−y}O{sub x} (M = Nb, Hf) thin-film alloys were fabricated on 1 μm thermal SiO{sub 2} atop Si (100) substrates by reactive magnetron cosputtering at room temperature using a low energy ion source, aimed at the film, to insert dissociated oxygen species and increase film density. Themore » authors studied the influence of deposition parameters such as oxygen partial pressure, V to M ratio, and power of the plasma source, on resistance and TCR. The authors show high TCR (up to −3.7% K{sup −1}) at 300 K, and excellent uniformity, but also an increase in resistance. The authors emphasize that samples were prepared at room temperature with no heat treatment, much simpler than common processes that require annealing at high temperatures. So, this is a promising fabrication route for uncooled microbolometers.« less

Coatings for wear and lubrication

NASA Technical Reports Server (NTRS)

Spalvins, T.

1978-01-01

Recent advances in the tribological uses of rf-sputtered and ion plated films of solid film lubricants (laminar solids, soft metals, organic polymers) and wear resistant refractory compounds (carbides, nitrides, silicides) are reviewed. The sputtering and ion plating potentials and the corresponding coatings formed were evaluated relative to the friction coefficient, wear endurance life and mechanical properties. The tribological and mechanical properties for each kind of film are discussed in terms of film adherence, coherence, density, grain size, morphology, internal stresses, thickness, and substrate conditions such as temperature, topography, chemistry and dc-biasing. The ion plated metallic films in addition to improved tribological properties also have better mechanical properties such as tensile strength and fatigue life.

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

1989-01-01

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

Lattice structure and magnetization of LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Rata, A. D.; Herklotz, A.; Schultz, L.; Dörr, K.

2010-07-01

We investigate the structure and magnetic properties of thin films of the LaCoO3 compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase (001) oriented LaCoO3 layers were grown on all substrates despite large misfits. The tetragonal distortion of the films covers a wide range from -2% to 2.8%. Our LaCoO3 films are ferromagnetic with Curie temperature around 85 K, contrary to the bulk. The total magnetic moment is below 1 μ B /Co3+, a value relatively small for an exited spin-state of the Co3+ ions, but comparable to values reported in literature. A correlation of strain states and magnetic moment of Co3+ ions in LaCoO3 thin films is observed.

Rectification of Ion Current in Nanopipettes by External Substrates

PubMed Central

Shi, Wenqing; Baker, Lane A.

2014-01-01

We describe ion distribution and the current-voltage (i-V) response of nanopipettes at different probe-to-substrate distances (Dps) as simulated by finite-element methods. Results suggest electrostatic interactions between a charged substrate and the nanopipette dominate electrophoretic ion transport through the nanopipette when Dps is within one order of magnitude of the Debye length (~10 nm for a 1 mM solution as employed in the simulation). Ion current rectification (ICR) and permselectivity associated with a neutral or charged nanopipette can be reversibly enhanced or reduced dependent on Dps, charge polarity and charge density (σ) of the substrate. Regulation of nanopipette current is a consequence of the enrichment or depletion of ions within the nanopipette interior which influences conductivity of the nanopipette. When the external substrate is less negatively charged than the nanopipette, the substrate first reduces, and then enhances the ICR as Dps decreases. Surprisingly, both experimental and simulated data show that a neutral substrate was also able to reduce and reverse the ICR of a slightly negatively charged nanopipette. Simulated results ascribe such effects to the elimination of ion depletion within the nanopipette at positive potentials. PMID:24200344

Rectification of ion current in nanopipettes by external substrates.

PubMed

Sa, Niya; Lan, Wen-Jie; Shi, Wenqing; Baker, Lane A

2013-12-23

We describe ion distribution and the current-voltage (i-V) response of nanopipettes at different probe-to-substrate distances (Dps) as simulated by finite-element methods. Results suggest electrostatic interactions between a charged substrate and the nanopipette dominate electrophoretic ion transport through the nanopipette when Dps is within 1 order of magnitude of the Debye length (∼10 nm for a 1 mM solution as employed in the simulation). Ion current rectification (ICR) and permselectivity associated with a neutral or charged nanopipette can be reversibly enhanced or reduced dependent on Dps, charge polarity, and charge density (σ) of the substrate. Regulation of nanopipette current is a consequence of the enrichment or depletion of ions within the nanopipette interior, which influences conductivity of the nanopipette. When the external substrate is less negatively charged than the nanopipette, the substrate first reduces, and then enhances the ICR as Dps decreases. Surprisingly, both experimental and simulated data show that a neutral substrate was also able to reduce and reverse the ICR of a slightly negatively charged nanopipette. Simulated results ascribe such effects to the elimination of ion depletion within the nanopipette at positive potentials.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

The Effect of Ion Energy and Substrate Temperature on Deuterium Trapping in Tungsten

NASA Astrophysics Data System (ADS)

Roszell, John Patrick Town

Tungsten is a candidate plasma facing material for next generation magnetic fusion devices such as ITER and there are major operational and safety issues associated with hydrogen (tritium) retention in plasma facing components. An ion gun was used to simulate plasma-material interactions under various conditions in order to study hydrogen retention characteristics of tungsten thus enabling better predictions of hydrogen retention in ITER. Thermal Desorption Spectroscopy (TDS) was used to measure deuterium retention from ion irradiation while modelling of TDS spectra with the Tritium Migration Analysis Program (TMAP) was used to provide information about the trapping mechanisms involved in deuterium retention in tungsten. X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) were used to determine the depth resolved composition of specimens used for irradiation experiments. Carbon and oxygen atoms will be among the most common contaminants within ITER. C and O contamination in polycrystalline tungsten (PCW) specimens even at low levels (˜0.1%) was shown to reduce deuterium retention by preventing diffusion of deuterium into the bulk of the specimen. This diffusion barrier was also responsible for the inhibition of blister formation during irradiations at 500 K. These observations may provide possible mitigation techniques for problems associated with tritium retention and mechanical damage to plasma facing components caused by hydrogen implantation. Deuterium trapping in PCW and single crystal tungsten (SCW) was studied as a function of ion energy and substrate temperature. Deuterium retention was shown to decrease with decreasing ion energy below 100 eV/D+. Irradiation of tungsten specimens with 10 eV/D+ ions was shown to retain up to an order of magnitude less deuterium than irradiation with 500 eV/D+ ions. Furthermore, the retention mechanism for deuterium was shown to be consistent across the entire energy range studied (10-500 eV) with the shallow penetration depth of low energy ions being the major factor in the reduction in retention. A change in retention mechanism was observed as tungsten temperature during irradiation was increased from 300 to 500 K. Modelling of deuterium retention in 300 and 500 K SCW specimens revealed that two traps, 1.0 and 1.3 eV, are involved in retention for irradiations performed at 300K while a single 2.1 eV trap is present for 500 K irradiations. Experiments suggest that the 2.1 eV trap is created during irradiation of tungsten at 500 K and this process also involves the annihilation of the 1.3 and 1.0 eV traps.

The parameter influence of ion irradiation on the distribution profile of the defect in silicon films

NASA Astrophysics Data System (ADS)

Shemukhin, A. A.; Balaskshin, Yu. V.; Evseev, A. P.; Chernysh, V. S.

2017-09-01

As silicon is an important element in semiconductor devices, the process of defect formation under ion irradiation in it is studied well enough. Modern electronic components are made on silicon lattices (films) that are 100-300 nm thick (Chernysh et al., 1980; Shemukhin et al., 2012; Ieshkin et al., 2015). However, there are still features to be observed in the process of defect formation in silicon. In our work we investigate the effect of fluence and target temperature on the defect formation in films and bulk silicon samples. To investigate defect formation in the silicon films and bulk silicon samples we present experimental data on Si+ implantation with an energy of 200 keV, fluences range from 5 * 1014 to 5 * 1015 ion/cm2 for a fixed flux 1 μA/cm2 and the substrate temperatures from 150 to 350 K The sample crystallinity was investigated by using the Rutherford backscattering technique (RBS) in channeling and random modes. It is shown that in contrast to bulk silicon for which amorphization is observed at 5 × 1016 ion/cm2, the silicon films on sapphire amorphize at lower critical fluences (1015 ion/cm2). So the amorphization critical fluences depend on the target temperature. In addition it is shown that under similar implantation parameters, the disordering of silicon films under the action of the ion beam is stronger than the bulk silicon.

Conversion of fullerenes to diamond

DOEpatents

Gruen, Dieter M.

1993-01-01

A method of forming synthetic diamond on a substrate is disclosed. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond thickness on the substrate.

Conversion of fullerenes to diamond

DOEpatents

Gruen, Dieter M.

1994-01-01

A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.

Free Energy Simulations of Ligand Binding to the Aspartate Transporter GltPh

PubMed Central

Heinzelmann, Germano; Baştuğ, Turgut; Kuyucak, Serdar

2011-01-01

Glutamate/Aspartate transporters cotransport three Na+ and one H+ ions with the substrate and countertransport one K+ ion. The binding sites for the substrate and two Na+ ions have been observed in the crystal structure of the archeal homolog GltPh, while the binding site for the third Na+ ion has been proposed from computational studies and confirmed by experiments. Here we perform detailed free energy simulations of GltPh, giving a comprehensive characterization of the substrate and ion binding sites, and calculating their binding free energies in various configurations. Our results show unequivocally that the substrate binds after the binding of two Na+ ions. They also shed light into Asp/Glu selectivity of GltPh, which is not observed in eukaryotic glutamate transporters. PMID:22098736

Calcium-ion transport by intact Ehrlich ascites-tumour cells. Role of respiratory substrates, Pi and temperature.

PubMed

Charlton, R R; Wenner, C E

1978-03-15

1. The interaction of intact Ehrlich ascites-tumour cells with Ca2+ at 37 degrees C consists of Ca2+ uptake followed by efflux from the cells. Under optimum conditions, two or three cycles of uptake and efflux are observed in the first 15 min after Ca2+ addition. 2. The respiratory substrates malate, succinate and ascorbate plus p-phenylenediamine support Ca2+ uptake. Ca2+ uptake at 37 degrees C is sensitive to the respiratory inhibitors rotenone and antimycin A when appropriate substrates are present. Ca2+ uptake and retention are inhibited by the uncoupler S-13. 3. Increasing extracellular Pi (12 to 30 mM) stimulates uncoupler-sensitive Ca2+ uptake, which reaches a maximum extent of 15 nmol/mg of protein when supported by succinate respiration. Ca2+ efflux is partially inhibited at 30 mM-Pi. 4. Optimum Ca2+ uptake occurs in the presence of succinate and Pi, suggesting that availability of substrate and Pi are rate-limiting. K. Ca2+ uptake occurs at 4 degrees C and is sensitive to uncouplers and oligomycin. Ca2+ efflux at this temperature is minimal. These data are consistent with a model in which passive diffusion of Ca2+ through the plasma membrane is followed by active uptake by the mitochondria. Ca2+ uptake is supported by substrates entering respiration at all three energy-coupling sites. Ca2+ efflux appears to be an active process with a high temperature coefficient.

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Stabilization of the Thermal Decomposition of Poly(Propylene Carbonate) Through Copper Ion Incorporation and Use in Self-Patterning

NASA Astrophysics Data System (ADS)

Spencer, Todd J.; Chen, Yu-Chun; Saha, Rajarshi; Kohl, Paul A.

2011-06-01

Incorporation of copper ions into poly(propylene carbonate) (PPC) films cast from γ-butyrolactone (GBL), trichloroethylene (TCE) or methylene chloride (MeCl) solutions containing a photo-acid generator is shown to stabilize the PPC from thermal decomposition. Copper ions were introduced into the PPC mixtures by bringing the polymer mixture into contact with copper metal. The metal was oxidized and dissolved into the PPC mixture. The dissolved copper interferes with the decomposition mechanism of PPC, raising its decomposition temperature. Thermogravimetric analysis shows that copper ions make PPC more stable by up to 50°C. Spectroscopic analysis indicates that copper ions may stabilize terminal carboxylic acid groups, inhibiting PPC decomposition. The change in thermal stability based on PPC exposure to patterned copper substrates was used to provide a self-aligned patterning method for PPC on copper traces without the need for an additional photopatterning registration step. Thermal decomposition of PPC is then used to create air isolation regions around the copper traces. The spatial resolution of the self-patterning PPC process is limited by the lateral diffusion of the copper ions within the PPC. The concentration profiles of copper within the PPC, patterning resolution, and temperature effects on the PPC decomposition have been studied.

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

NASA Astrophysics Data System (ADS)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-05-01

The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows <110> preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a <111> preferred orientation on a <001>-oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

The Effects of Temperature and Oxidation on Deuterium Retention in Solid and Liquid Lithium Films on Molybdenum Plasma-Facing Components

NASA Astrophysics Data System (ADS)

Capece, Angela

2014-10-01

Liquid metal plasma-facing components (PFCs) enable in-situ renewal of the surface, thereby offering a solution to neutron damage, erosion, and thermal fatigue experienced by solid PFCs. Lithium in particular has a high chemical affinity for hydrogen, which has resulted in reduced recycling and enhanced plasma performance on many fusion devices including TFTR, T11-M, FTU, CDX-U, LTX, TJ-II, and NSTX. A key component to the improvement in plasma performance is deuterium retention in Li; however, this process is not well understood in the complex tokamak environment. Recent surface science experiments conducted at the Princeton Plasma Physics Laboratory have used electron spectroscopy and temperature programmed desorption to understand the mechanisms for D retention in Li coatings on Mo substrates. The experiments were designed to give monolayer-control of Li films and were conducted in ultrahigh vacuum under controlled environments. An electron cyclotron resonance plasma source was used to deliver a beam of deuterium ions to the surface over a range of ion energies. Our work shows that D is retained as LiD in metallic Li films. However, when oxygen is present in the film, either by diffusion from the subsurface at high temperature or as a contaminant during the deposition process, Li oxides are formed that retain D as LiOD. Experiments indicate that LiD is more thermally stable than LiOD, which decomposes to liberate D2 gas and D2O at temperatures 100 K lower than the LiD decomposition temperature. Other experiments show how D retention varies with substrate temperature to provide insight into the differences between solid and liquid lithium films. This work was supported by DOE Contract No. DE AC02-09CH11466.

A differential scanning calorimetric study of the effects of metal ions, substrate/product, substrate analogues and chaotropic anions on the thermal denaturation of yeast enolase 1.

PubMed

Brewer, J M; Wampler, J E

2001-03-14

The thermal denaturation of yeast enolase 1 was studied by differential scanning calorimetry (DSC) under conditions of subunit association/dissociation, enzymatic activity or substrate binding without turnover and substrate analogue binding. Subunit association stabilizes the enzyme, that is, the enzyme dissociates before denaturing. The conformational change produced by conformational metal ion binding increases thermal stability by reducing subunit dissociation. 'Substrate' or analogue binding additionally stabilizes the enzyme, irrespective of whether turnover is occurring, perhaps in part by the same mechanism. More strongly bound metal ions also stabilize the enzyme more, which we interpret as consistent with metal ion loss before denaturation, though possibly the denaturation pathway is different in the absence of metal ion. We suggest that some of the stabilization by 'substrate' and analogue binding is owing to the closure of moveable polypeptide loops about the active site, producing a more 'closed' and hence thermostable conformation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Shweta, E-mail: shwetaverma@rrcat.gov.in; Rao, B. T.; Detty, A. P.

We studied localized surface plasmon resonances (LSPR) at different compositions, substrate temperatures, and mass thicknesses of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition. The LSPRs were pronounced at all compositions of the films grown at high substrate temperature of about 300 °C as compared to those grown at room temperature. The alloy formation and composition of the films were determined using X-ray photoelectron and energy dispersive spectroscopy. Films' mass thickness and compositional uniformity along the thickness were determined using X-ray reflectometry and secondary ion mass spectroscopy. Atomic force microscopic analysis revealed the formation of densely packed nanoparticles ofmore » increasing size with the number of laser ablation pulses. The LSPR wavelength red shifted with increasing either Au percentage or film mass thickness and corresponding LSPR tuning was obtained in the range of 450 to 690 nm. The alloy dielectric functions obtained from three different models were compared and the optical responses of the nanoparticle films were calculated from modified Yamaguchi effective medium theory. The tuning of LSPR was found to be due to combined effect of change in intrinsic and extrinsic parameters mainly the composition, morphology, particle-particle, and particle-substrate interactions.« less

Tet(L) and Tet(K) Tetracycline-Divalent Metal/H+ Antiporters: Characterization of Multiple Catalytic Modes and a Mutagenesis Approach to Differences in Their Efflux Substrate and Coupling Ion Preferences

PubMed Central

Jin, Jie; Guffanti, Arthur A.; Bechhofer, David H.; Krulwich, Terry A.

2002-01-01

The Tet(L) protein encoded in the Bacillus subtilis chromosome and the closely related Tet(K) protein from Staphylococcus aureus plasmids are multifunctional antiporters that have three cytoplasmic efflux substrates: a tetracycline-divalent metal (TC-Me2+) complex that bears a net single positive charge, Na+, and K+. Tet(L) and Tet(K) had been shown to couple efflux of each of these substrates to influx of H+ as the coupling ion. In this study, competitive cross-inhibition between K+ and other cytoplasmic efflux substrates was demonstrated. Tet(L) and Tet(K) had also been shown to use K+ as an alternate coupling ion in support of Na+ or K+ efflux. Here they were shown to couple TC-Me2+ efflux to K+ uptake as well, exhibiting greater use of K+ as a coupling ion as the external pH increased. The substrate and coupling ion preferences of the two Tet proteins differed, especially in the higher preference of Tet(K) than Tet(L) for K+, both as a cytoplasmic efflux substrate and as an external coupling ion. Site-directed mutagenesis was employed to test the hypothesis that some feature of the putative “antiporter motif,” motif C, of Tet proteins would be involved in these characteristic preferences. Mutation of the A157 in Tet(L) to a hydroxyamino acid resulted in a more Tet(K)-like K+ preference both as coupling ion and efflux substrate. A reciprocal S157A mutant of Tet(K) exhibited reduced K+ preference. Competitive inhibition among substrates and the parallel effects of the single mutation upon K+ preference, as both an efflux substrate and coupling ion, are compatible with a model in which a single translocation pathway through the Tet(L) and Tet(K) transporters is used both for the cytoplasmic efflux substrates and for the coupling ions, in an alternating fashion. However, the effects of the A157 and other mutations of Tet(L) indicate that even if there are a shared binding site and translocation pathway, some elements of that pathway are used by all substrates and others are important only for particular substrates. PMID:12169596

Low temperature perovskite crystallization of highly tunable dielectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thick films deposited by ion beam sputtering on platinized silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, X. H.; Defaye, E.; Aied, M.

2009-02-15

Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thick films with thickness up to 1 {mu}m were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 {mu}m thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively largermore » tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 {mu}m thick film; besides, strong defect-related inhomogeneous strains ({approx}0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.« less

Control of spectral transmission enhancement properties of random anti-reflecting surface structures fabricated using gold masking

NASA Astrophysics Data System (ADS)

Peltier, Abigail; Sapkota, Gopal; Potter, Matthew; Busse, Lynda E.; Frantz, Jesse A.; Shaw, L. Brandon; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.; Poutous, Menelaos K.

2017-02-01

Random anti-reflecting subwavelength surface structures (rARSS) have been shown to suppress Fresnel reflection and scatter from optical surfaces. The structures effectively function as a gradient-refractive-index at the substrate boundary, and the spectral transmission properties of the boundary have been shown to depend on the structure's statistical properties (diameter, height, and density.) We fabricated rARSS on fused silica substrates using gold masking. A thin layer of gold was deposited on the surface of the substrate and then subjected to a rapid thermal annealing (RTA) process at various temperatures. This RTA process resulted in the formation of gold "islands" on the surface of the substrate, which then acted as a mask while the substrate was dry etched in a reactive ion etching (RIE) process. The plasma etch yielded a fused silica surface covered with randomly arranged "rods" that act as the anti-reflective layer. We present data relating the physical characteristics of the gold "island" statistical populations, and the resulting rARSS "rod" population, as well as, optical scattering losses and spectral transmission properties of the final surfaces. We focus on comparing results between samples processed at different RTA temperatures, as well as samples fabricated without undergoing RTA, to relate fabrication process statistics to transmission enhancement values.

Transparent anodic TiO2 nanotube arrays on plastic substrates for disposable biosensors and flexible electronics.

PubMed

Farsinezhad, Samira; Mohammadpour, Arash; Dalrymple, Ashley N; Geisinger, Jared; Kar, Piyush; Brett, Michael J; Shankar, Karthik

2013-04-01

Exploitation of anodically formed self-organized TiO2 nanotube arrays in mass-manufactured, disposable biosensors, rollable electrochromic displays and flexible large-area solar cells would greatly benefit from integration with transparent and flexible polymeric substrates. Such integration requires the vacuum deposition of a thin film of titanium on the desired substrate, which is then anodized in suitable media to generate TiO2 nanotube arrays. However the challenges associated with control of Ti film morphology, nanotube array synthesis conditions, and film adhesion and transparency, have necessitated the use of substrate heating during deposition to temperatures of at least 300 degrees C and as high as 500 degrees C to generate highly ordered open-pore nanotube arrays, thus preventing the use of polymeric substrates. We report on a film growth technique that exploits atomic peening to achieve high quality transparent TiO2 nanotube arrays with lengths up to 5.1 microm at room temperature on polyimide substrates without the need for substrate heating or substrate biasing or a Kauffman ion source. The superior optical quality and uniformity of the nanotube arrays was evidenced by the high specular reflectivity and the smooth pattern of periodic interferometric fringes in the transmission spectra of the nanotube arrays, from which the wavelength-dependent effective refractive index was extracted for the air-TiO2 composite medium. A fluorescent immunoassay biosensor constructed using 5.1 microm-long transparent titania nanotube arrays (TTNAs) grown on Kapton substrates detected human cardiac troponin I at a concentration of 0.1 microg ml(-1).

Tuning phase transition temperature of VO2 thin films by annealing atmosphere

NASA Astrophysics Data System (ADS)

Liu, Xingxing; Wang, Shao-Wei; Chen, Feiliang; Yu, Liming; Chen, Xiaoshuang

2015-07-01

A simple new way to tune the optical phase transition temperature of VO2 films was proposed by only controlling the pressure of oxygen during the annealing process. Vanadium films were deposited on glass by a large-scale magnetron sputtering coating system and then annealed in appropriate oxygen atmosphere to form the VO2 films. The infrared transmission change (at 2400 nm) is as high as 58% for the VO2 thin film on the glass substrate, which is very good for tuning infrared radiation and energy saving as smart windows. The phase transition temperature of the films can be easily tuned from an intrinsic temperature to 44.7 °C and 40.2 °C on glass and sapphire by annealing oxygen pressure, respectively. The mechanism is: V3+ ions form in the film when under anaerobic conditions, which can interrupt the V4+ chain and reduce the phase transition temperature. The existence of V3+ ions has been observed by x-ray photoelectron spectroscopy (XPS) experiments as proof.

Secondary ion emission from arachidic acid LB-layers under Ar +, Xe +, Ga + and SF 5+ primary ion bombardment

NASA Astrophysics Data System (ADS)

Stapel, D.; Brox, O.; Benninghoven, A.

1999-02-01

The influence of primary ion energy, mass and composition on sputtering and secondary ion emission of arachidic acid Langmuir-Blodgett mono- and multilayers, deposited on gold substrates, has been investigated. Ga +, Ar +, 129Xe+ and SF 5+ in the energy range 5-25 keV were used as primary ions. Yields Y, damage cross-sections σ, and ion formation efficiencies E have been determined for selected secondary ions, characterizing the molecular overlayer, the overlayer substrate interface and the substrate. We found a strong influence of layer thickness and of primary ion energy, mass and composition on Y, σ and E. Information depth increases with increasing ion energy and decreasing mass of primary ions, being higher for SF 5+ than for Xe +. Y, σ and E increase with increasing primary ion mass. They are considerably higher for a molecular (SF 5+) than for atomic ions of comparable mass ( 129Xe+). The experimental results supply information on the extension of impact cascades, generated in different substrate materials by different primary ion species and different energies. They demonstrate that in analytical SIMS application information depths can be minimized and yields and ion formation efficiencies can be maximized by the use of molecular primary ions.

Radiolysis of astrophysical ice analogs by energetic ions: the effect of projectile mass and ice temperature.

PubMed

Pilling, Sergio; Duarte, Eduardo Seperuelo; Domaracka, Alicja; Rothard, Hermann; Boduch, Philippe; da Silveira, Enio F

2011-09-21

An experimental study of the interaction of highly charged, energetic ions (52 MeV (58)Ni(13+) and 15.7 MeV (16)O(5+)) with mixed H(2)O : C(18)O(2) astrophysical ice analogs at two different temperatures is presented. This analysis aims to simulate the chemical and the physicochemical interactions induced by cosmic rays inside dense, cold astrophysical environments, such as molecular clouds or protostellar clouds as well at the surface of outer solar system bodies. The measurements were performed at the heavy ion accelerator GANIL (Grand Accelerateur National d'Ions Lourds) in Caen, France. The gas samples were deposited onto a CsI substrate at 13 K and 80 K. In situ analysis was performed by a Fourier transform infrared (FTIR) spectrometer at different fluences. Radiolysis yields of the produced species were quantified. The dissociation cross section at 13 K of both H(2)O and CO(2) is about 3-4 times smaller when O ions are employed. The ice temperature seems to affect differently each species when the same projectile was employed. The formation cross section at 13 K of molecules such as C(18)O, CO (with oxygen from water), and H(2)O(2) increases when Ni ions are employed. The formation of organic compounds seems to be enhanced by the oxygen projectiles and at lower temperatures. In addition, because the organic production at 13 K is at least 4 times higher than the value at 80 K, we also expect that interstellar ices are more organic-rich than the surfaces of outer solar system bodies.

Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2 chemistry

NASA Astrophysics Data System (ADS)

Wang, Junkang; Bulkin, Pavel; Florea, Ileana; Maurice, Jean-Luc; Johnson, Erik

2016-07-01

For the growth of hydrogenated microcrystalline silicon (μc-Si:H) thin films by low temperature plasma-enhanced chemical vapor deposition (PECVD), silicon tetrafluoride (SiF4) has recently attracted interest as a precursor due to the resilient optoelectronic performance of the resulting material and devices. In this work, μc-Si:H films are deposited at high rates (7 Å s-1) from a SiF4 and hydrogen (H2) gas mixture by matrix-distributed electron cyclotron resonance PECVD (MDECR-PECVD). Increased substrate temperature and moderate ion bombardment energy (IBE) are demonstrated to be of vital importance to achieve high quality μc-Si:H films under such low process pressure and high plasma density conditions, presumably due to thermally-induced and ion-induced enhancement of surface species migration. Two well-defined IBE thresholds at 12 eV and 43 eV, corresponding respectively to SiF+ ion-induced surface and bulk atomic displacement, are found to be determinant to the final film properties, namely the surface roughness, feature size and crystalline content. Moreover, a study of the growth dynamics shows that the primary challenge to producing highly crystallized μc-Si:H films by MDECR-PECVD appears to be the nucleation step. By employing a two-step method to first prepare a highly crystallized seed layer, μc-Si:H films lacking any amorphous incubation layer have been obtained. A crystalline volume fraction of 68% is achieved with a substrate temperature as low as 120 °C, which is of great interest to broaden the process window for solar cell applications.

Continuum simulations of acetylcholine consumption by acetylcholinesterase: a Poisson-Nernst-Planck approach.

PubMed

Zhou, Y C; Lu, Benzhuo; Huber, Gary A; Holst, Michael J; McCammon, J Andrew

2008-01-17

The Poisson-Nernst-Planck (PNP) equation provides a continuum description of electrostatic-driven diffusion and is used here to model the diffusion and reaction of acetylcholine (ACh) with acetylcholinesterase (AChE) enzymes. This study focuses on the effects of ion and substrate concentrations on the reaction rate and rate coefficient. To this end, the PNP equations are numerically solved with a hybrid finite element and boundary element method at a wide range of ion and substrate concentrations, and the results are compared with the partially coupled Smoluchowski-Poisson-Boltzmann model. The reaction rate is found to depend strongly on the concentrations of both the substrate and ions; this is explained by the competition between the intersubstrate repulsion and the ionic screening effects. The reaction rate coefficient is independent of the substrate concentration only at very high ion concentrations, whereas at low ion concentrations the behavior of the rate depends strongly on the substrate concentration. Moreover, at physiological ion concentrations, variations in substrate concentration significantly affect the transient behavior of the reaction. Our results offer a reliable estimate of reaction rates at various conditions and imply that the concentrations of charged substrates must be coupled with the electrostatic computation to provide a more realistic description of neurotransmission and other electrodiffusion and reaction processes.

Ion plating technique improves thin film deposition

NASA Technical Reports Server (NTRS)

Mattox, D. M.

1968-01-01

Ion plating technique keeps the substrate surface clean until the film is deposited, allows extensive diffusion and chemical reaction, and joins insoluble or incompatible materials. The technique involves the deposition of ions on the substrate surface while it is being bombarded with inert gas ions.

Formation of CuAlO2 Film by Ultrasonic Spray Pyrolysis

NASA Astrophysics Data System (ADS)

Iping, S.; Lockman, Zainovia; Hutagalung, S. D.; Kamsul, A.; Matsuda, Atsunori

2011-10-01

Smooth, crack free and homogenous CuAlO2 film was produced by chemical solution deposition process via spray pyrolysis technique on a cleaned Si substrate. The precursor solution used was comprised of a mixture of 45.87 mmol Cu(NO3)2.3H2O and 90 mmol Al(NO3)3.9H2O at ratio of Cu:Al = 1.2:1. The precursor solution was placed in a mist chamber and was atomized by a nebulizer to produce precursor mist. The precursor mist was then carried out by Ar gas and was sprayed onto a heated Si. Two main parameters were studied: the distance between the nozzle of the precursor mist chamber and the Si and the temperature of the Si substrate. It appears that from the XRD data, CuAlO2 can be detected for samples prepared by spraying the precursor mist at temperature of > 550 °C with distance between the nozzle and the substrate of 3cm. Reaction of the Cu and Al ions in the mist near the substrate may have promoted the crystallisation of CuAlO2.

Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Provo, James L., E-mail: jlprovo@verizon.net

2016-07-15

Aluminum has desirable characteristics of good thermal properties, good electrical characteristics, good optical properties, and the characteristic of being nonmagnetic and having a low atomic weight (26.98 g atoms), but because of its low melting point (660 °C) and ability as a reactive metal to alloy with most common metals in use, it has been ignored as a substrate material for use in processing thin films. The author developed a simple solution to this problem, by putting a permeation barrier of alumina (Al{sub 2}O{sub 3}) onto the surface of pure Al substrates by using a standard chemical oxidation process of the surfacemore » (i.e., anodization), before additional film deposition of reactive metals at temperatures up to 500 °C for 1-h, without the formation of alloys or intermetallic compounds to affect the good properties of Al substrates. The chromic acid anodization process used (MIL-A-8625) produced a film barrier of ∼(500–1000) nm of alumina. The fact that refractory Al{sub 2}O{sub 3} can inhibit the reaction of metals with Al at temperatures below 500 °C suggests that Al is a satisfactory substrate if properly oxidized prior to film deposition. To prove this concept, thin film samples of Cr, Mo, Er, Sc, Ti, and Zr were prepared on anodized Al substrates and studied by x-ray diffraction, Rutherford ion back scattering, and Auger/argon sputter surface profile analysis to determine any film substrate interactions. In addition, a major purpose of our study was to determine if ErD{sub 2} thin films could be produced on Al substrates with fully hydrided Er films. Thus, a thin film of ErD{sub 2} on an anodized Al substrate was prepared and studied, with and without the alumina permeation barrier. Films for study were prepared on 1.27 cm diameter Al substrates with ∼500 nm of the metals studied after anodization. Substrates were weighed, cleaned, and vacuum fired at 500 °C prior to use. The Al substrates were deposited using standard electron beam cold crucible evaporation techniques, and after deposition the Er film was hydrided with D{sub 2} gas using a standard nonair exposure hydriding technique. All processing was conducted in an all metal ion pumped ultrahigh vacuum system. Results showed that e-beam deposition of films studied onto Al substrates could be successfully performed, if a permeation barrier of Al{sub 2}O{sub 3} from 500 to 1000 nm was made prior to thin film deposition up to temperatures of 500 °C for 1-h. Hydrides also, could be produced with full gas/metal atomic ratios of ∼2.0 as evidenced by the ErD{sub 2} films produced. Thus, the use of a simple permeation barrier of Al{sub 2}O{sub 3} on Al substrates prior to additional metal film deposition was proven to be a successful method of producing both thin metal films and hydride films of various types for many applications.« less

Ultra-fast vapour-liquid-solid synthesis of Si nanowires using ion-beam implanted gallium as catalyst.

PubMed

Hetzel, Martin; Lugstein, Alois; Zeiner, Clemens; Wójcik, Tomasz; Pongratz, Peter; Bertagnolli, Emmerich

2011-09-30

The feasibility of gallium as a catalyst for vapour-liquid-solid (VLS) nanowire (NW) growth deriving from an implantation process in silicon by a focused ion beam (FIB) is investigated. Si(100) substrates are subjected to FIB implantation of gallium ions with various ion fluence rates. NW growth is performed in a hot wall chemical vapour deposition (CVD) reactor at temperatures between 400 and 500 °C with 2% SiH(4)/He as precursor gas. This process results in ultra-fast growth of (112)- and (110)-oriented Si-NWs with a length of several tens of micrometres. Further investigation by transmission electron microscopy indicates the presence of a NW core-shell structure: while the NW core yields crystalline structuring, the shell consists entirely of amorphous material.

Diffusive charge transport in graphene

NASA Astrophysics Data System (ADS)

Chen, Jianhao

The physical mechanisms limiting the mobility of graphene on SiO 2 are studied and printed graphene devices on a flexible substrate are realized. Intentional addition of charged scattering impurities is used to study the effects of charged impurities. Atomic-scale defects are created by noble-gas ions irradiation to study the effect of unitary scatterers. The results show that charged impurities and atomic-scale defects both lead to conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates. While charged impurities cause intravalley scattering and induce a small change in the minimum conductivity, defects in graphene scatter electrons between the valleys and suppress the minimum conductivity below the metallic limit. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a small resistivity which is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity. Graphene is also made into high mobility transparent and flexible field effect device via the transfer-printing method. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime, and show the promise of graphene as a novel electronic material that have potential applications not only on conventional inorganic substrates, but also on flexible substrates.

Engineering the Activity and Lifetime of Heterogeneous Catalysts for Carbon Nanotube Growth via Substrate Ion Beam Bombardment (Postprint)

DTIC Science & Technology

2014-07-31

growth. Annealing of the catalyst film in an H2 ambient induces dewetting and leads to the formation of iron nanoparticles on top of the engineered...flow) at 585 °C for 10 min to dewet the catalyst layer into discrete nanoparticles. The samples were then rapidly cooled down to room temperature in a

Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

2000-01-01

Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Matrix effects on secondary ion emission from a room-temperature ionic liquid, 1-ethyl-3-methylimidazolium bis[trifluoromethanesulfonyl]imide

NASA Astrophysics Data System (ADS)

Souda, Ryutaro

2009-06-01

The ionization mechanism of room-temperature ionic liquids has been investigated using time-of-flight secondary ion mass spectrometry in the temperature range of 15-300 K. Analyses of 1-ethyl-3-methylimidazolium bis[trifluoromethanesulfonyl]imide ([emim][Tf2N]) deposited on a Ni(111) substrate revealed that the [emim]+ and [Tf2N]- yields increase together with the Ni+ yield at monolayer coverage; no such increase was observed for the films deposited on a D2O spacer layer. Results indicated that the [emim][Tf2N] molecule is not perfectly ionized; the Ni(111) surface accepts (for [emim]+) or donates (for [Tf2N]-) an electron with higher efficiency than the counterion because of the metal band effect. This phenomenon might be induced by electrostatic interactions between the separated cation and anion during sputtering. It is also suggested that the sputtered Ni atom can be ionized nonadiabatically by the formation of a quasimolecule with adspecies. The multilayer of [emim][Tf2N] deposited at 15 K has a porous structure, resembling that of polar molecules, because of nonionic intermolecular interactions. The phase transition is identifiable, together with the morphological change in the crystalline film, from temperature evolutions of the secondary ion yields.

Magnetic properties of chemical remanent magnetization in synthetic and natural goethite - Prospects for a natural remanent magnetization/thermoremanent magnetization ratio paleomagnetic stability test?

NASA Astrophysics Data System (ADS)

Dekkers, Mark J.; Rochette, Pierre

1992-11-01

Results are presented of measurements of chemical remanent magnetization properties in natural goethite and in goethite samples synthesized under controlled field conditions (horizontally directed field of 0.30 mT) at 30 C and 55 C, with and without the presence of microfiber glass filters. Results indicate that both the temperature and the presence of a substrate (microfiber glass filters) affect the goethite aging process and the magnetic properties of the resulting goethite. The goethite aging from ferrihydrite was much faster at 55 C than at 30 C, likely because of increased ion diffusion velocity in solution. Results of goethite aging in the presence of other mineral substrate (gibbsite) indicate that the type of mineral substrate is important.

Fabrication and electrical properties of low temperature-processed thin-film-transistors with chemical-bath deposited ZnO layer.

PubMed

Ahn, Joo-Seob; Kwon, Ji-Hye; Yang, Heesun

2013-06-01

ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of approimately 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiN(x)/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm2/V x s.

Na+ Interactions with the Neutral Amino Acid Transporter ASCT1*

PubMed Central

Scopelliti, Amanda J.; Heinzelmann, Germano; Kuyucak, Serdar; Ryan, Renae M.; Vandenberg, Robert J.

2014-01-01

The alanine, serine, cysteine transporters (ASCTs) belong to the solute carrier family 1A (SLC1A), which also includes the excitatory amino acid transporters (EAATs) and the prokaryotic aspartate transporter GltPh. Acidic amino acid transport by the EAATs is coupled to the co-transport of three Na+ ions and one proton, and the counter-transport of one K+ ion. In contrast, neutral amino acid exchange by the ASCTs does not require protons or the counter-transport of K+ ions and the number of Na+ ions required is not well established. One property common to SLC1A family members is a substrate-activated anion conductance. We have investigated the number and location of Na+ ions required by ASCT1 by mutating residues in ASCT1 that correspond to residues in the EAATs and GltPh that are involved in Na+ binding. Mutations to all three proposed Na+ sites influence the binding of substrate and/or Na+, or the rate of substrate exchange. A G422S mutation near the Na2 site reduced Na+ affinity, without affecting the rate of exchange. D467T and D467A mutations in the Na1 site reduce Na+ and substrate affinity and also the rate of substrate exchange. T124A and D380A mutations in the Na3 site selectively reduce the affinity for Na+ and the rate of substrate exchange without affecting substrate affinity. In many of the mutants that reduce the rate of substrate transport the amplitudes of the substrate-activated anion conductances are not substantially affected indicating altered ion dependence for channel activation compared with substrate exchange. PMID:24808181

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

PubMed

Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

2015-03-13

The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

Ion exchange substrates for plant cultivation in extraterrestrial stations and space crafts

NASA Astrophysics Data System (ADS)

Soldatov, Vladimir

2012-07-01

Ion exchange substrates Biona were specially designed at the Belarus Academy of Sciences for plants cultivation in spacecrafts and extraterrestrial stations. The first versions of such substrates have been successfully used in several space experiments and in a long-term experiment in which three soviet test-spacemen spent a full year in hermetic cabin imitating a lunar station cabin (1067-1968). In this experiment the life support system included a section with about one ton of the ion exchange substrate, which was used to grow ten vegetations of different green cultures used in the food of the test persons. Due to failure of a number of Soviet space experiments, decay of the Soviet Union and the following economic crisis the research in this field carried out in Belarus were re-directed to the needs of usual agriculture, such as adaptation of cell cultures, growing seedlings, rootage of cuttings etc. At present ion exchange substrate Biona are produced in limited amounts at the experimental production plant of the Institute of Physical Organic Chemistry and used in a number of agricultural enterprises. New advanced substrates and technologies for their production have been developed during that time. In the presentation scientific principles of preparation and functioning of ion exchange substrates as well as results of their application for cultivation different plants are described. The ion exchange substrate is a mixture of cation and anion exchangers saturated in a certain proportions with all ions of macro and micro elements. These chemically bound ions are not released to water and become available for plants in exchange to their root metabolites. The substrates contain about 5% mass of nutrient elements far exceeding any other nutrient media for plants. They allow generating 3-5 kg of green biomass per kilogram of substrate without adding any fertilizers; they are sterile by the way of production and can be sterilized by usual methods; allow regeneration after exhausting. They can serve without additional fertilizers for several years. Their service in the course of exploitation includes only watering. By appearance granular Biona substrate are solid particles with size 0.5-2 mm. Special varieties of Biona substrates, designed for the spacecrafts to withstand zero-gravity conditions, have been made in form of continuous textile materials

Radiation Stability of Triple Coatings Based on Transition-Metal Nitrides Under Irradiation By Alpha Particles and Argon Ions

NASA Astrophysics Data System (ADS)

Potekaev, A. I.; Kislitsyn, S. B.; Uglov, V. V.; Klopotov, A. A.; Gorlachev, I. D.; Klopotov, V. D.; Grinkevich, L. S.

2016-05-01

The data on the influence of irradiation of (Ti, Cr)N1-x coatings by helium and argon ions on their surface structure are presented. The (Ti, Cr)N1-x coatings 50-300 nm in thickness were formed on carbon steel substrates by vacuum-arc deposition. Irradiation of the coated specimens was performed in a DC-60 heavy-ion accelerator by low-energy 4He+1, 4He+2 and 40Ar5+ ions and high-energy 40Ar5+ ions up to the fluence 1.0·1017 ion/cm2 at the irradiation temperature not higher than 150°C. It is shown that irradiation of the (Ti, Cr)N1-x coating surface by 4He+1, 4He+2 and 40Ar5+ ions with the energy 20 keV/charge does not give rise to any noticeable structural changes nor any surface blistering, while its irradiation by 40Ar5+ ions with the energy 1.50 MeV/amu causes blistering.

Plasma sprayed hydroxyapatite coatings on titanium substrates. Part 1: Mechanical properties and residual stress levels.

PubMed

Tsui, Y C; Doyle, C; Clyne, T W

1998-11-01

Hydroxyapatite (HA) coatings have been sprayed on to substrates of Ti-6Al-4V, using a range of input power levels and plasma gas mixtures. Coatings have also been produced on substrates of mild steel and tungsten, in order to explore certain aspects of the mechanical behaviour of HA without the complication of yielding or creep in the substrate. Studies have been made of the phase constitution, porosity, degree of crystallinity, OH ion content, microstructure and surface roughness of the HA coatings. The Young's moduli in tension and in compression were evaluated by the cantilever beam bend test using a tungsten/HA composite beam. The flexural Young's modulus was determined using a free-standing deposit under the same test. Adhesion was characterised using the single-edge notch-bend test; this is considered superior to the tensile bond strength test in common use. Measured interfacial fracture energies were of the order 1-10 J m(-2). Stress levels were investigated using specimen curvature measurements in conjunction with a numerical process model. The quenching stress for HA was measured to be about 10-25 MPa and the residual stress level in HA coatings at room temperature are predicted to lie in the approximate range of 20-40 MPa (tensile). These residual stresses could be reduced in magnitude by maintaining the substrate at a low temperature (possibly below room temperature) during spraying and it may be worthwhile to explore this. Ideally, the HA coating should have low porosity, high cohesive strength, good adhesion to the substrate, a high degree of crystallinity and high chemical purity and phase stability. In practice, such combinations are rather difficult to achieve by just varying the spraying parameters.

FTIR study of silicon carbide amorphization by heavy ion irradiations

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

2017-03-01

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basu, T.; Kumar, M.; Som, T., E-mail: tsom@iopb.res.in

2015-09-14

Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film.more » Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.« less

A Fungal α-Galactosidase from Tricholoma matsutake with Broad Substrate Specificity and Good Hydrolytic Activity on Raffinose Family Oligosaccharides.

PubMed

Geng, Xueran; Tian, Guoting; Zhao, Yongchang; Zhao, Liyan; Wang, Hexiang; Ng, Tzi Bun

2015-07-24

An acidic α-galactosidase designated as TMG was purified from the fruiting bodies The purification protocol entailed ion exchange chromatography on Q-Sepharose and of Tricholoma matsutake with 136-fold purification and a specific activity of 909 units/mg. Mono-Q and fast protein liquid chromatography on Superdex 75. TMG is a monomeric protein exhibiting a molecular mass of 47 kDa in SDS-PAGE and gel filtration. The purified enzyme was identified by LC-MS/MS and three inner amino acid sequences were obtained. The optimum pH and temperature for TMG with pNPGal as substrate were pH 4.5 and 55 °C, respectively. The α-galactosidase activity was strongly inhibited by K+, Ca2+, Cd2+, Hg2+, Ag+ and Zn2+ ions. The enzyme activity was inhibited by the chemical modification agent N-bromosuccinimide (NBS), indicating the importance of tryptophan residue(s) at or near the active site. Besides hydrolyzing pNPGal, TMG also efficaciously catalyzed the degradation of natural substrates such as stachyose, raffinose, and melibiose. Thus TMG can be exploited commercially for improving the nutritional value of soy milk by degradation of indigestible oligosaccharides.

Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32-1.0) single crystals

DOE PAGES

Zhang, Limin; Jiang, Weilin; Dissanayake, Amila C.; ...

2016-06-27

Lattice disorder and compositional changes in InxGa1-xN (x=0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3E13 cm-2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x=0.32 and 0.47),more » significant volume swelling of up to ~25% accompanied with oxidation in In-rich InxGa1-xN (x=0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

Yeast enolase: mechanism of activation by metal ions.

PubMed

Brewer, J M

1981-01-01

Yeast enolase as prepared by current procedures is inherently chemically homogeneous, though deamidation and partial denaturation can produce electrophoretically distinct forms. A true isozyme of the enzyme exists but does not survive the purification procedure. The chemical sequence for both has been established. The enzyme behaves in solution like a compact, nearly spherical molecule of moderate hydration. Strong intramolecular forces maintain the structure of the individual subunits. The enzyme as isolated is dimeric. If dissociated in the presence of magnesium ions and substrate, then the subunits are active, but if the dissociation occurs in the absence of metal ions, they are inactive until they have reassociated and undergone a first order "annealing" process. Magnesium (II) enhances association. The interaction between the subunits is hydrophobic in character. The enzyme can bind up to 2 mol of most metal ions in "conformational" sites which then allows up to 2 mol of substrate or some substrate analogue to bind. This is not sufficient for catalysis, but conformational metal ions do more than just allow substrate binding. A change in the environment of the metal ions occurs on substrate or substrate analogue binding. There is an absolute correlation between the occurrence of a structural change undergone by the 3-amino analogue of phosphoenolpyruvate and whether the metal ions produce any level of enzymatic activity. For catalysis, two more moles of metal ions, called "catalytic", must bind. There is evidence that the enzymatic reaction involves a carbanion mechanism. It is likely that two more moles of metal ion can bind which inhibit the reaction. The requirement for 2 mol of metal ion per subunit which contribute in different ways to catalysis is exhibited by a number of other enzymes.

An unconventional origin of metal-ion rescue and inhibition in the Tetrahymena group I ribozyme reaction.

PubMed Central

Shan, S O; Herschlag, D

2000-01-01

The presence of catalytic metal ions in RNA active sites has often been inferred from metal-ion rescue of modified substrates and sometimes from inhibitory effects of alternative metal ions. Herein we report that, in the Tetrahymena group I ribozyme reaction, the deleterious effect of a thio substitution at the pro-Sp position of the reactive phosphoryl group is rescued by Mn2+. However, analysis of the reaction of this thio substrate and of substrates with other modifications strongly suggest that this rescue does not stem from a direct Mn2+ interaction with the Sp sulfur. Instead, the apparent rescue arises from a Mn2+ ion interacting with the residue immediately 3' of the cleavage site, A(+1), that stabilizes the tertiary interactions between the oligonucleotide substrate (S) and the active site. This metal site is referred to as site D herein. We also present evidence that a previously observed Ca2+ ion that inhibits the chemical step binds to metal site D. These and other observations suggest that, whereas the interactions of Mn2+ at site D are favorable for the chemical reaction, the Ca2+ at site D exerts its inhibitory effect by disrupting the alignment of the substrates within the active site. These results emphasize the vigilance necessary in the design and interpretation of metal-ion rescue and inhibition experiments. Conversely, in-depth mechanistic analysis of the effects of site-specific substrate modifications can allow the effects of specific metal ion-RNA interactions to be revealed and the properties of individual metal-ion sites to be probed, even within the sea of metal ions bound to RNA. PMID:10864040

Effects of surface chemistry and microstructure of electrolyte on oxygen reduction kinetics of solid oxide fuel cells

DOE PAGES

Park, Joong Sun; An, Jihwan; Lee, Min Hwan; ...

2015-11-01

In this study, we report systematic investigation of the surface properties of yttria-stabilized zirconia (YSZ) electrolytes with the control of the grain boundary (GB) density at the surface, and its effects on electrochemical activities. The GB density of thin surface layers deposited on single crystal YSZ substrates is controlled by changing the annealing temperature (750-1450 °C). Higher oxygen reduction reactions (ORR) kinetics is observed in samples annealed at lower temperatures. The higher ORR activity is ascribed to the higher GB density at the YSZ surface where 'mobile' oxide ion vacancies are more populated. Meanwhile, oxide ion vacancies concurrently created withmore » yttrium segregation at the surface at the higher annealing temperature are considered inactive to oxygen incorporation reactions. Our results provide additional insight into the interplay between the surface chemistry, microstructures, and electrochemical activity. They potentially provide important guidelines for engineering the electrolyte electrode interfaces of solid oxide fuel cells for higher electrochemical performance.« less

Formation of conductive polymers using nitrosyl ion as an oxidizing agent

DOEpatents

Choi, Kyoung-Shin; Jung, Yongju; Singh, Nikhilendra

2016-06-07

A method of forming a conductive polymer deposit on a substrate is disclosed. The method may include the steps of preparing a composition comprising monomers of the conductive polymer and a nitrosyl precursor, contacting the substrate with the composition so as to allow formation of nitrosyl ion on the exterior surface of the substrate, and allowing the monomer to polymerize into the conductive polymer, wherein the polymerization is initiated by the nitrosyl ion and the conductive polymer is deposited on the exterior surface of the substrate. The conductive polymer may be polypyrrole.

Rational composition control of mixed-lanthanide metal-organic frameworks by an interfacial reaction with metal ion-doped polymer substrates

NASA Astrophysics Data System (ADS)

Tsuruoka, Takaaki; Miyanaga, Ayumi; Ohhashi, Takashi; Hata, Manami; Takashima, Yohei; Akamatsu, Kensuke

2017-09-01

A simple composition control route to mixed-lanthanide metal-organic frameworks (MOFs) was developed based on an interfacial reaction with mixed-lanthanide metal ion-doped polymer substrates. By controlling the composition of lanthanide ion (Eu3+ and Tb3+) dopants in polymer substrates to be used as metal ion precursors and scaffolding for the formation of MOFs, [EuxTb2-x(bdc)3(H2O)4]n crystals with a tunable metal composition could be routinely prepared on polymer substrates. Inductively coupled plasma (ICP) measurements revealed that the composition of the obtained frameworks was almost the same as that of the initial polymer substrates. In addition, the resulting [EuxTb2-x(bdc)3(H2O)4]n crystals showed strong phosphorescence because of Eu3+ transitions, indicating that the energy transfer from Tb3+ to Eu3+ ions in the frameworks could be achieved with high efficiency.

Magnetic properties of Fe implanted SrTiO{sub 3} perovskite crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Şale, A.G.; Kazan, S.; Gatiiatova, Ju.I.

2013-08-01

Graphical abstract: - Highlights: • The results of investigations of magnetic properties of Fe implanted SrTiO{sub 3} are presented. • The measurements of the temperature dependence of the magnetization were performed. • Ferromagnetic hysteresis loops in Fe implanted SrTiO{sub 3} were observed at low temperatures. • Superparamagnetic behavior of the samples at high temperatures was revealed. • It was shown that the magnetization of the samples depends on the fluency of implantation. - Abstract: The results of investigations of magnetic properties of SrTiO{sub 3} perovskite crystal implanted with 40 keV Fe ions at the fluencies between 0.5 × 10{sup 17}more » and 1.5 × 10{sup 17} ion/cm{sup 2} are presented. It has been revealed that high-fluency implantation with Fe ions results in the formation of a granular metal particulate composite in the irradiated near-surface layer of SrTiO{sub 3} substrate, which exhibits remarkable ferromagnetic behavior. The measurements of the temperature dependence of the magnetic moment showed that the samples exhibit blocking temperature at about 350 K, above which a superparamagnetic behavior has been observed. Ferromagnetic ordering and magnetic hysteresis loops were observed in Fe implanted SrTiO{sub 3} at the temperatures lower than 350 K. It has been shown that the magnetization of the ferromagnetic state depends on the fluency of implantation.« less

Effect of high energy ions on the electrical and morphological properties of Poly(3-Hexylthiophene) (P3HT) thin film

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, R.; Vishnoi, R.; Sharma, G. D.; Biswas, S. K.

2018-05-01

The spin-coated thin films of Poly(3-Hexylthiophene) (P3HT) on the glass and Si (double side polished) substrates have been irradiated with 55 MeV Si+4 swift heavy ions (SHI) at fluences in the range from 1 × 1010 to 1 × 1012 ions/cm2. Structural modifications produced by energetic ions are observed by characterization of pristine and irradiated P3HT thin films. Different techniques like high-resolution X-ray diffraction (HR-XRD), micro-Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR) were used to analyze the structural changes in the material. A significant increase in crystallinity and room temperature electrical conductivity of P3HT film has been detected on exposure to the heavy ions. The observed increase in the electrical conductivity with increased fluences is explained in the light of improved ordering of polymer chains after irradiation. Mott's variable range hopping model has been used to explain the conduction mechanism in the material in the temperature range of 230-350 K. The modification in surface properties also observed using AFM analysis and contact angle measurement. It is observed that nature of the P3HT thin films remains hydrophobic after irradiation.

Enhanced secondary ion emission with a bismuth cluster ion source

NASA Astrophysics Data System (ADS)

Nagy, G.; Walker, A. V.

2007-04-01

We have investigated the mechanism of secondary ion yield enhancement using Bin+ (n = 1-6) primary ions and three different samples - dl-phenylalanine, Irganox 1010 and polystyrene - adsorbed on Al, Si and Ag substrates. The largest changes in secondary ion yields are observed for Bi2+ and Bi3+ primary ions. Smaller increases in secondary ion yield are found using Bi4+, Bi5+ and Bi6+ projectiles. The secondary ion yield enhancements are generally larger on Si than on Al. Using Bin+ structures obtained from density functional theory (DFT) calculations we demonstrate that the yield enhancements cannot be explained by an increase in the deposited energy density (energy per area) into the substrate. These data show that the mechanism of Bin+ sputtering is very similar to that for Aun+ primary ion beams. When a polyatomic primary ion strikes the substrate, its constituent atoms are likely to remain near to each other, and so a substrate atom can be struck simultaneously by multiple atoms. The action of these multiple concerted impacts leads to efficient energy transfer in the near surface region and an increase in the number of secondary ions ejected from the surface. Such concerted impacts involve one, two or three projectile atoms, which explains well the nonlinear yield enhancements observed going from Bi+ to Bi2+ to Bi3+.

Method of producing catalytic material for fabricating nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seals, Roland D.; Menchhofer, Paul A.; Howe, Jane Y.

Methods of fabricating nano-catalysts are described. In some embodiments the nano-catalyst is formed from a powder-based substrate material and is some embodiments the nano-catalyst is formed from a solid-based substrate material. In some embodiments the substrate material may include metal, ceramic, or silicon or another metalloid. The nano-catalysts typically have metal nanoparticles disposed adjacent the surface of the substrate material. The methods typically include functionalizing the surface of the substrate material with a chelating agent, such as a chemical having dissociated carboxyl functional groups (--COO), that provides an enhanced affinity for metal ions. The functionalized substrate surface may then bemore » exposed to a chemical solution that contains metal ions. The metal ions are then bound to the substrate material and may then be reduced, such as by a stream of gas that includes hydrogen, to form metal nanoparticles adjacent the surface of the substrate.« less

Method of producing catalytic materials for fabricating nanostructures

DOEpatents

Seals, Roland D; Menchhofer, Paul A; Howe, Jane Y; Wang, Wei

2013-02-19

Methods of fabricating nano-catalysts are described. In some embodiments the nano-catalyst is formed from a powder-based substrate material and is some embodiments the nano-catalyst is formed from a solid-based substrate material. In some embodiments the substrate material may include metal, ceramic, or silicon or another metalloid. The nano-catalysts typically have metal nanoparticles disposed adjacent the surface of the substrate material. The methods typically include functionalizing the surface of the substrate material with a chelating agent, such as a chemical having dissociated carboxyl functional groups (--COO), that provides an enhanced affinity for metal ions. The functionalized substrate surface may then be exposed to a chemical solution that contains metal ions. The metal ions are then bound to the substrate material and may then be reduced, such as by a stream of gas that includes hydrogen, to form metal nanoparticles adjacent the surface of the substrate.

Reversible strain effect on the magnetization of LaCoO3 films

NASA Astrophysics Data System (ADS)

Herklotz, A.; Rata, A. D.; Schultz, L.; Dörr, K.

2009-03-01

The magnetization (M) of a LaCoO3 film grown epitaxially on a piezoelectric substrate has been investigated in dependence on the biaxial in-plane strain. M decreases with the reversible release of tensile strain, with a maximum change of at least 6% per 0.1% of biaxial strain near the Curie temperature (TC) . The biaxial strain response of TC is estimated to be below 5 K/% in the tensile strain state. This is in agreement with results from statically strained films on various substrates. As possible origins of the strain-induced magnetization are considered (i) the strain-dependent Curie temperature, (ii) a strain-dependent magnetically inhomogeneous (phase-separated) state, and (iii) a strain-dependent magnetic moment (spin state) of Co ions. The TC shift is found insufficient to explain the measured strain-induced magnetization change but contributions from mechanism (ii) or (iii) must be involved.

Ion processing element with composite media

DOEpatents

Mann, Nick R.; Tranter, Troy J.; Todd, Terry A.; Sebesta, Ferdinand

2003-02-04

An ion processing element employing composite media disposed in a porous substrate, for facilitating removal of selected chemical species from a fluid stream. The ion processing element includes a porous fibrous glass substrate impregnated by composite media having one or more active components supported by a matrix material of polyacrylonitrile. The active components are effective in removing, by various mechanisms, one or more constituents from a fluid stream passing through the ion processing element. Due to the porosity and large surface area of both the composite medium and the substrate in which it is disposed, a high degree of contact is achieved between the active component and the fluid stream being processed. Further, the porosity of the matrix material and the substrate facilitates use of the ion processing element in high volume applications where it is desired to effectively process a high volume flows.

Ion processing element with composite media

DOEpatents

Mann, Nick R [Blackfoot, ID; Tranter, Troy J [Idaho Falls, ID; Todd, Terry A [Aberdeen, ID; Sebesta, Ferdinand [Prague, CZ

2009-03-24

An ion processing element employing composite media disposed in a porous substrate, for facilitating removal of selected chemical species from a fluid stream. The ion processing element includes a porous fibrous glass substrate impregnated by composite media having one or more active components supported by a matrix material of polyacrylonitrile. The active components are effective in removing, by various mechanisms, one or more constituents from a fluid stream passing through the ion processing element. Due to the porosity and large surface area of both the composite medium and the substrate in which it is disposed, a high degree of contact is achieved between the active component and the fluid stream being processed. Further, the porosity of the matrix material and the substrate facilitates use of the ion processing element in high volume applications where it is desired to effectively process a high volume flows.

Observations of Ag diffusion in ion implanted SiC

DOE PAGES

Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

2015-03-17

The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

Preparation of 'near' homogeneous samples for the analysis of matrix-assisted laser desorption/ionisation processes

NASA Astrophysics Data System (ADS)

Allwood, D. A.; Perera, I. K.; Perkins, J.; Dyer, P. E.; Oldershaw, G. A.

1996-11-01

Highly uniform thin films of samples for matrix-assisted laser desorption/ionisation (MALDI) have been fabricated by depositing a saturated solution of ferulic acid onto a soda lime glass disc and crushing with polished aluminium, the films covering large areas of the substrate and having a thickness between 45-60 μm. The effects that different substrates and crushing materials as well as sample concentration and sample recrystallisation have on these films has been examined by scanning electron microscopy. Such films have been shown to have a lower threshold fluence for matrix ion detection than standard dried-droplet samples, the reduction being approximately 15% for three of the five matrices analysed. An explanation for this is proposed in terms of crushed samples possessing a greater average energy per unit volume coupled to them by the laser due to their improved surface uniformity. Furthermore, samples that are dried at refrigerated temperatures (˜ 2.25°C) are shown to have a much improved macroscopic uniformity over samples dried at room temperature. Refrigerated and crushed MALDI samples yield analyte ions with good spot-to-spot and pulse-to-pulse reproducibility and both preparation steps appear to improve the resolution of spectra obtained with a time-of-flight mass spectrometer.

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Fabrication of free-standing aligned multiwalled carbon nanotube array for Li-ion batteries

NASA Astrophysics Data System (ADS)

Bulusheva, L. G.; Arkhipov, V. E.; Fedorovskaya, E. O.; Zhang, Su; Kurenya, A. G.; Kanygin, M. A.; Asanov, I. P.; Tsygankova, A. R.; Chen, Xiaohong; Song, Huaihe; Okotrub, A. V.

2016-04-01

We show that a high-temperature CCl4 vapor treatment of vertically aligned multiwalled carbon nanotubes (VA-MWCNTs) grown on silicon substrate allows carefully detach the array from the substrate. Moreover, this procedure partially purifies the VA-MWCNTs from the residual iron catalyst. To improve electrical connectivity of free-standing VA-MWCNTs in an electrochemical cell, the array was placed between the layers of Ni foam. Such assembly demonstrated the better performance in Li-battery as compared to the disordered MWCNTs. After 50 cycles, the specific capacity of VA-MWCNT array synthesized from 0.5 wt% ferrocene solution in toluene was 350 mAh g-1 at a current density of 0.1 A g-1, while the battery with the disordered MWCNTs achieved 197 mAh g-1 only. By the results of electrochemical impedance spectroscopy, the higher capacity of VA-MWCNTs was attributed to larger surface area available for electrolyte and Li ions due to the absence of binder coating.

Ion-assisted coating for large-scale Bimorph deformable mirror

NASA Astrophysics Data System (ADS)

Mikami, Takuya; Okamoto, Takayuki; Yoshida, Kunio; Jitsuno, Takahisa; Motokoshi, Shinji; Samarkin, Vadim V.; Kudryashov, Alexis V.; Kawanaka, Junji; Miyanaga, Noriaki

2016-07-01

We have fabricated a 410 x 468 mm size deformable mirror with 100 Bimorph piezoceramic actuators for the LFEX laser system at Osaka University. In the case of Bimorph-type deformable mirrors, the mirror surface had to be polished and coated after bonding the piezoceramic actuators to the rear side of the thin mirror substrate. This provides a good surface figure, but the coating temperature for the high-reflection mirror was strictly limited because of the thermal fragility of piezoceramic actuators. The mirror substrate with the actuators was polished, and an ion-assisted multilayer dielectric coating was produced at 60 degrees Celsius with our 80-inch coating chamber. The flatness of the mirror just after coating was 7 μm, and reduced by aging to 3.2 μm when the mirror was assembled. The surface figure of the assembled mirror with 20 piezostack bonded actuators is demonstrated and a laser-induced damage threshold tested with a witness sample is also reported.

The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

NASA Astrophysics Data System (ADS)

Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

2014-03-01

Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

Nanocrystalline SnO2 formation using energetic ion beam.

PubMed

Mohanty, T; Batra, Y; Tripathi, A; Kanjilal, D

2007-06-01

Nanocrystalline tin oxide (SnO2) thin films grown by RF magnetron sputtering technique were characterized by UV-Visible absorption spectroscopy and Photoluminescence spectroscopy. From atomic force microscopic (AFM) and Glancing angle X-ray diffraction (GAXRD) measurements, the radius of grains was found to be approximately 6+/-2 nm. The thin films were bombarded with 250 keV Xe2+ ion beam to observe the stability of nanophases against radiation. For ion bombarded films, optical absorption band edge is shifted towards red region. Atomic force microscopy studies show that the radius of the grains was increased to approximately 8 +/- 1 nm and the grains were nearly uniform in size. The size of the grains has been reduced after ion bombardment in the case of films grown on Si. During this process, defects such as vacancies, voids were generated in the films as well as in the substrates. Ion bombardment induces local temperature increase of thin films causing melting of films. Ion beam induced defects enhances the diffusion of atoms leading to uniformity in size of grains. The role of matrix on ion beam induced grain growth is discussed.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Articles including thin film monolayers and multilayers

DOEpatents

Li, DeQuan; Swanson, Basil I.

1995-01-01

Articles of manufacture including: (a) a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, (b) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, and a metal species attached to the multidentate ligand, (c) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, and a multifunctional organic ligand attached to the metal species, and (d) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, a multifunctional organic ligand attached to the metal species, and a second metal species attached to the multifunctional organic ligand, are provided, such articles useful in detecting the presence of a selected target species, as nonliear optical materials, or as scavengers for selected target species.

Tantalum-based thin film coatings for wear resistant arthroprostheses.

PubMed

Balagna, C; Faga, M G; Spriano, S

2011-10-01

Cobalt-chromium-molybdenum alloys with high carbon content (HC-CoCrMo) are widely used as materials for arthroprosthesis, in particular in metal-on-metal (MoM) hip joints. In spite of their good wear and corrosion resistance, production of metallic wear particles and metal ion release will occur on a large time-scale. An enhancement of the metal ion level in the patient's blood and urine is often reported in clinical data. Hypersensitivity, inflammatory response and cell necrosis can occur as consequence. So implants on young patients and women on childbearing age are not so widespread. The aim of this research is the realization of a thin film coating in order to improve the biocompatibility of Co-based alloys and to reduce debris production, ion release and citotoxicity. The innovative process consists of a thermal treatment in molten salts, in order to obtain a tantalum enriched thin film coating. Tantalum is chosen because it is considered a biocompatible metal with high corrosion resistance and low ion release. Three HC-CoCrMo alloys, produced by different manufacturing processes, are tested as substrates. The coating is a thin film of TaC or it can be composed by a multilayer of two tantalum carbides and metallic tantalum, depending on the temperature of the treatment and on the carbon content of the substrate. The thin films as well the substrates are characterized from the structural, chemical and morphological point of view. Moreover mechanical behaviour of treated and untreated materials is analyzed by means of nanohardness, scratch and ball-on-disc wear tests. The coating increases the mechanical and tribological properties of HC-CoCrMo.

Ultrashort pulsed laser ablation for decollation of solid state lithium-ion batteries

NASA Astrophysics Data System (ADS)

Hördemann, C.; Anand, H.; Gillner, A.

2017-08-01

Rechargeable lithium-ion batteries with liquid electrolytes are the main energy source for many electronic devices that we use in our everyday lives. However, one of the main drawbacks of this energy storage technology is the use of liquid electrolyte, which can be hazardous to the user as well as the environment. Moreover, lithium-ion batteries are limited in voltage, energy density and operating temperature range. One of the most novel and promising battery technologies available to overcome the above-mentioned drawbacks is the Solid-State Lithium-Ion Battery (SSLB). This battery type can be produced without limitations to the geometry and is also bendable, which is not possible with conventional batteries1 . Additionally, SSLBs are characterized by high volumetric and gravimetric energy density and are intrinsically safe since no liquid electrolyte is used2-4. Nevertheless, the manufacturing costs of these batteries are still high. The existing production-technologies are comparable to the processes used in the semiconductor industry and single cells are produced in batches with masked-deposition at low deposition rates. In order to decrease manufacturing costs and to move towards continuous production, Roll2Roll production methods are being proposed5, 6. These methods offer the possibility of producing large quantities of substrates with deposited SSLB-layers. From this coated substrate, single cells can be cut out. For the flexible decollation of SSLB-cells from the substrate, new manufacturing technologies have to be developed since blade-cutting, punching or conventional laser-cutting processes lead to short circuiting between the layers. Here, ultra-short pulsed laser ablation and cutting allows the flexible decollation of SSLBs. Through selective ablation of individual layers, an area for the cutting kerf is prepared to ensure a shortcut-free decollation.

Initial Plasma Testing of the Ion Proportional Surface Emission Cathode

DTIC Science & Technology

2008-07-15

REPRINT 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Initial Plasma Testing of the Ion Proportional Surface Emission Cathode 5a. CONTRACT NUMBER...substrate and an adjacent metal cathode element. The substrate potential is held positive of the cathode with gate elements. In plasma , the gate is...eliminated due to ambient ion flux which maintains the substrate potential near plasma ground. Prototype devices have been tested using a laboratory plasma

Stochastic steps in secondary active sugar transport

PubMed Central

Adelman, Joshua L.; Ghezzi, Chiara; Bisignano, Paola; Loo, Donald D. F.; Choe, Seungho; Abramson, Jeff; Rosenberg, John M.; Wright, Ernest M.; Grabe, Michael

2016-01-01

Secondary active transporters, such as those that adopt the leucine-transporter fold, are found in all domains of life, and they have the unique capability of harnessing the energy stored in ion gradients to accumulate small molecules essential for life as well as expel toxic and harmful compounds. How these proteins couple ion binding and transport to the concomitant flow of substrates is a fundamental structural and biophysical question that is beginning to be answered at the atomistic level with the advent of high-resolution structures of transporters in different structural states. Nonetheless, the dynamic character of the transporters, such as ion/substrate binding order and how binding triggers conformational change, is not revealed from static structures, yet it is critical to understanding their function. Here, we report a series of molecular simulations carried out on the sugar transporter vSGLT that lend insight into how substrate and ions are released from the inward-facing state of the transporter. Our simulations reveal that the order of release is stochastic. Functional experiments were designed to test this prediction on the human homolog, hSGLT1, and we also found that cytoplasmic release is not ordered, but we confirmed that substrate and ion binding from the extracellular space is ordered. Our findings unify conflicting published results concerning cytoplasmic release of ions and substrate and hint at the possibility that other transporters in the superfamily may lack coordination between ions and substrate in the inward-facing state. PMID:27325773

Stochastic steps in secondary active sugar transport.

PubMed

Adelman, Joshua L; Ghezzi, Chiara; Bisignano, Paola; Loo, Donald D F; Choe, Seungho; Abramson, Jeff; Rosenberg, John M; Wright, Ernest M; Grabe, Michael

2016-07-05

Secondary active transporters, such as those that adopt the leucine-transporter fold, are found in all domains of life, and they have the unique capability of harnessing the energy stored in ion gradients to accumulate small molecules essential for life as well as expel toxic and harmful compounds. How these proteins couple ion binding and transport to the concomitant flow of substrates is a fundamental structural and biophysical question that is beginning to be answered at the atomistic level with the advent of high-resolution structures of transporters in different structural states. Nonetheless, the dynamic character of the transporters, such as ion/substrate binding order and how binding triggers conformational change, is not revealed from static structures, yet it is critical to understanding their function. Here, we report a series of molecular simulations carried out on the sugar transporter vSGLT that lend insight into how substrate and ions are released from the inward-facing state of the transporter. Our simulations reveal that the order of release is stochastic. Functional experiments were designed to test this prediction on the human homolog, hSGLT1, and we also found that cytoplasmic release is not ordered, but we confirmed that substrate and ion binding from the extracellular space is ordered. Our findings unify conflicting published results concerning cytoplasmic release of ions and substrate and hint at the possibility that other transporters in the superfamily may lack coordination between ions and substrate in the inward-facing state.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slabodchikov, Vladimir A., E-mail: dipis1991@mail.ru; Borisov, Dmitry P., E-mail: borengin@mail.ru; Kuznetsov, Vladimir M., E-mail: kuznetsov@rec.tsu.ru

The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate.more » The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.« less

Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

NASA Astrophysics Data System (ADS)

Choudhary, Ritika; Chauhan, Rishi Pal

2017-07-01

The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

Probing nanoscale ion dynamics in ultrathin films of polymerized ionic liquids by broadband dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Sangoro, Joshua; Heres, Maximilian; Cosby, Tyler

Continuous progress in energy storage and conversion technologies necessitates novel experimental approaches that can provide fundamental insights regarding the impact of reduced dimensions on the functional properties of materials. In this talk, a nondestructive experimental approach to probe nanoscale ion dynamics in ultrathin films of polymerized ionic liquids over a broad frequency range spanning over six orders of magnitude by broadband dielectric spectroscopy will be presented. The approach involves using an electrode configuration with lithographically patterned silica nanostructures, which allow for an air gap between the confined ion conductor and one of the electrodes. It is observed that the characteristic ion dynamics rates significantly slow down with decreasing film thicknesses above the calorimetric glass transition of the bulk polymer. However, the mean rates remain bulk-like at lower temperatures. These results highlight the increasing influence of the polymer/substrate interactions with decreasing film thickness on ion dynamics. The authors gratefully acknowledge the National Science Foundation for financial support through the Polymers Program award DMR-1508394.

Industrial ion source technology

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.

1978-01-01

An analytical model was developed to describe the development of a coned surface texture with ion bombardment and simultaneous deposition of an impurity. A mathematical model of sputter deposition rate from a beveled target was developed in conjuction with the texturing models to provide an important input to that model. The establishment of a general procedure that will allow the treatment of manay different sputtering configurations is outlined. Calculation of cross sections for energetic binary collisions was extened to Ar, Kr.. and Xe with total cross sections for viscosity and diffusion calculated for the interaction energy range from leV to 1000eV. Physical sputtering and reactive ion etching experiments provided experimental data on the operating limits of a broad beam ion source using CF4 as a working gas to produce reactive species in a sputtering beam. Magnetic clustering effects are observed when Al is seeded with Fe and sputtered with Ar(?) ions. Silicon was textured at a micron scale by using a substrate temperature of 600 C.

Resolution of the carbon contamination problem in ion irradiation experiments

NASA Astrophysics Data System (ADS)

Was, G. S.; Taller, S.; Jiao, Z.; Monterrosa, A. M.; Woodley, D.; Jennings, D.; Kubley, T.; Naab, F.; Toader, O.; Uberseder, E.

2017-12-01

The widely experienced problem of carbon uptake in samples during ion irradiation was systematically investigated to identify the source of carbon and to develop mitigation techniques. Possible sources of carbon included carbon ions or neutrals incorporated into the ion beam, hydrocarbons in the vacuum system, and carbon species on the sample and fixture surfaces. Secondary ion mass spectrometry, atom probe tomography, elastic backscattering spectrometry, and principally, nuclear reaction analysis, were used to profile carbon in a variety of substrates prior to and following irradiation with Fe2+ ions at high temperature. Ion irradiation of high purity Si and Ni, and also of alloy 800H coated with a thin film of alumina eliminated the ion beam as the source of carbon. Hydrocarbons in the vacuum and/or on the sample and fixtures was the source of the carbon that became incorporated into the samples during irradiation. Plasma cleaning of the sample and sample stage, and incorporation of a liquid nitrogen cold trap both individually and especially in combination, completely eliminated the uptake of carbon during heavy ion irradiation. While less convenient, coating the sample with a thin film of alumina was also effective in eliminating carbon incorporation.

Fabrication of superconducting nanowires from ultrathin MgB2 films via focused ion beam milling

NASA Astrophysics Data System (ADS)

Zhang, Chen; Wang, Da; Liu, Zheng-Hao; Zhang, Yan; Ma, Ping; Feng, Qing-Rong; Wang, Yue; Gan, Zi-Zhao

2015-02-01

High quality superconducting nanowires were fabricated from ultrathin MgB2 films by a focused ion beam milling technique. The precursor MgB2 films in 10 nm thick were grown on MgO substrates by using a hybrid physical-chemical vapor deposition method. The nanowires, in widths of about 300-600 nm and lengths of 1 or 10 μm, showed high superconducting critical temperatures (Tc's) above 34 K and narrow superconducting transition widths (ΔTc's) of 1-3 K. The superconducting critical current density Jc of the nanowires was above 5 × 107 A/cm2 at 20 K. The high Tc, narrow ΔTc, and high Jc of the nanowires offered the possibility of making MgB2-based nano-devices such as hot-electron bolometers and superconducting nanowire single-photon detectors with high operating temperatures at 15-20 K.

Magnetic phase composition of strontium titanate implanted with iron ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dulov, E.N., E-mail: evgeny.dulov@ksu.ru; Ivoilov, N.G.; Strebkov, O.A.

2011-12-15

Highlights: Black-Right-Pointing-Pointer The origin of RT-ferromagnetism in iron implanted strontium titanate. Black-Right-Pointing-Pointer Metallic iron nanoclusters form during implantation and define magnetic behaviour. Black-Right-Pointing-Pointer Paramagnetic at room temperature iron-substituted strontium titanate identified. -- Abstract: Thin magnetic films were synthesized by means of implantation of iron ions into single-crystalline (1 0 0) substrates of strontium titanate. Depth-selective conversion electron Moessbauer spectroscopy (DCEMS) indicates that origin of the samples magnetism is {alpha}-Fe nanoparticles. Iron-substituted strontium titanate was also identified but with paramagnetic behaviour at room temperature. Surface magneto-optical Kerr effect (SMOKE) confirms that the films reveal superparamagnetism (the low-fluence sample) or ferromagnetism (themore » high-fluence sample), and demonstrate absence of magnetic in-plane anisotropy. These findings highlight iron implanted strontium titanate as a promising candidate for composite multiferroic material and also for gas sensing applications.« less

Polypeptide Translocation Through the Mitochondrial TOM Channel: Temperature-Dependent Rates at the Single-Molecule Level.

PubMed

Mahendran, Kozhinjampara R; Lamichhane, Usha; Romero-Ruiz, Mercedes; Nussberger, Stephan; Winterhalter, Mathias

2013-01-03

The TOM protein complex facilitates the transfer of nearly all mitochondrial preproteins across outer mitochondrial membranes. Here we characterized the effect of temperature on facilitated translocation of a mitochondrial presequence peptide pF1β. Ion current fluctuations analysis through single TOM channels revealed thermodynamic and kinetic parameters of substrate binding and allowed determining the energy profile of peptide translocation. The activation energy for the on-rate and off-rate of the presequence peptide into the TOM complex was symmetric with respect to the electric field and estimated to be about 15 and 22 kT per peptide. These values are above that expected for free diffusion of ions in water (6 kT) and reflect the stronger interaction in the channel. Both values are in the range for typical enzyme kinetics and suggest one process without involving large conformational changes within the channel protein.

Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating.

PubMed

Zhang, Haoran; Zhang, Yaqian; Zhang, Yanhui; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Deng, Rongxuan; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

2016-08-24

Oxygen can passivate Cu surface active sites when graphene nucleates. Thus, the nucleation density is decreased. The CuO/Cu substrate was chosen for graphene domain synthesis in our study. The results indicate that the CuO/Cu substrate is beneficial for large-scale, single-crystal graphene domain synthesis. Graphene grown on the CuO/Cu substrate exhibits fewer nucleation sites than on Cu foils, suggesting that graphene follows an oxygen-dominating growth. Hydrogen treatment via a heating process could weaken the surface oxygen's role in limiting graphene nucleation under the competition of hydrogen and oxygen and could transfer the synthesis of graphene into a hydrogen-dominating growth. However, the competition only exists during the chemical vapor deposition heating process. For non-hydrogen heated samples, oxygen-dominating growth is experienced even though the samples are annealed in hydrogen for a long time after the heating process. With the temperature increases, the role of hydrogen gradually decreases. The balance of hydrogen and oxygen is adjusted by introducing hydrogen gas at a different heating temperatures. The oxygen concentration on the substrate surface is believed to determine the reactions mechanisms based on the secondary ion mass spectrometry test results. This study provides a new method for the controllable synthesis of graphene nucleation during a heating process.

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

PubMed

Faraz, Tahsin; van Drunen, Maarten; Knoops, Harm C M; Mallikarjunan, Anupama; Buchanan, Iain; Hausmann, Dennis M; Henri, Jon; Kessels, Wilhelmus M M

2017-01-18

The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiN x ) films used for a variety of applications in device manufacturing. In many cases, a low temperature (<400 °C) deposition process is desired that yields high quality SiN x films that are etch resistant and also conformal when grown on 3D substrate topographies. In this work, we developed a novel plasma-enhanced atomic layer deposition (PEALD) process for SiN x using a mono-aminosilane precursor, di(sec-butylamino)silane (DSBAS, SiH 3 N( s Bu) 2 ), and N 2 plasma. Material properties have been analyzed over a wide stage temperature range (100-500 °C) and compared with those obtained in our previous work for SiN x deposited using a bis-aminosilane precursor, bis(tert-butylamino)silane (BTBAS, SiH 2 (NH t Bu) 2 ), and N 2 plasma. Dense films (∼3.1 g/cm 3 ) with low C, O, and H contents at low substrate temperatures (<400 °C) were obtained on planar substrates for this process when compared to other processes reported in the literature. The developed process was also used for depositing SiN x films on high aspect ratio (4.5:1) 3D trench nanostructures to investigate film conformality and wet-etch resistance (in dilute hydrofluoric acid, HF/H 2 O = 1:100) relevant for state-of-the-art device architectures. Film conformality was below the desired levels of >95% and attributed to the combined role played by nitrogen plasma soft saturation, radical species recombination, and ion directionality during SiN x deposition on 3D substrates. Yet, very low wet-etch rates (WER ≤ 2 nm/min) were observed at the top, sidewall, and bottom trench regions of the most conformal film deposited at low substrate temperature (<400 °C), which confirmed that the process is applicable for depositing high quality SiN x films on both planar and 3D substrate topographies.

Radiation-induced deposition of transparent conductive tin oxide coatings

NASA Astrophysics Data System (ADS)

Umnov, S.; Asainov, O.; Temenkov, V.

2016-04-01

The study of tin oxide films is stimulated by the search for an alternative replacement of indium-tin oxide (ITO) films used as transparent conductors, oxidation catalysts, material gas sensors, etc. This work was aimed at studying the influence of argon ions irradiation on optical and electrical characteristics of tin oxide films. Thin films of tin oxide (without dopants) were deposited on glass substrates at room temperature using reactive magnetron sputtering. After deposition, the films were irradiated with an argon ion beam. The current density of the beam was (were) 2.5 mA/cm2, and the particles energy was 300-400 eV. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties were investigated by photometry in the range of 300-1100 nm. Films structural properties were studied using X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It has been found that the transmission increases proportionally with the irradiation time, however the sheet resistance increases disproportionally. Tin oxide films (thickness ~30 nm) with ~100% transmittance and sheet resistance of ~100 kOhm/sq. were obtained. The study has proved to be prospective in the use of ion beams to improve the properties of transparent conducting oxides.

Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi2S3 thin films prepared by solution growth technique at room temperature

NASA Astrophysics Data System (ADS)

Shaikh, Shaheed U.; Siddiqui, Farha Y.; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, Pawan K.; Sharma, Ramphal

2015-01-01

CdS-Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au9+ ions with the energy of 120 MeV at fluence 5×1012 ions/cm2 using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and I-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi2S3 bi-layer thin films are presented.

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

NASA Astrophysics Data System (ADS)

Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei

2018-02-01

We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5×1011 cm-2, which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance-voltage (C-V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C-V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800oC, the density of the deep-level defects was reduced and the carrier concentration partially recovered.

Low Temperature Vacuum Synthesis of Triangular CoO Nanocrystal/Graphene Nanosheets Composites with Enhanced Lithium Storage Capacity

PubMed Central

Guan, Qun; Cheng, Jianli; Li, Xiaodong; Wang, Bin; Huang, Ling; Nie, Fude; Ni, Wei

2015-01-01

CoO nanocrystal/graphene nanosheets (GNS) composites, consisting of a triangular CoO nanocrystal of 2~20 nm on the surface of GNS, are synthesized by a mild synthetic method. First, cobalt acetate tetrahydrate is recrystallized in the alcohol solution at a low temperature. Then, graphene oxide mixed with cobalt-precursor followed by high vacuum annealing to form the CoO nanocrystal/GNS composites. The CoO nanocrystal/GNS composites exhibit a high reversible capacity of 1481.9 m Ah g−1 after 30 cycles with a high Coulombic efficiency of over 96% when used as anode materials for lithium ion battery. The excellent electrochemical performances may be attributed to the special structure of the composites. The well-dispersed triangular CoO nanocrystal on the substrate of conductive graphene can not only have a shorter diffusion length for lithium ions, better stress accommodation capability during the charge-discharge processes and more accessible active sites for lithium-ion storage and electrolyte wetting, but also possess a good conductive network, which can significantly improve the whole electrochemical performance. PMID:25961670

Magnetic properties of epitaxial hexagonal HoFeO3 thin films

NASA Astrophysics Data System (ADS)

Wang, Xiao; Xiao, Zhuyun; Xu, Xiaoshan; Wang, Wenbin; Keavney, David; Liu, Yaohua; Cheng, X. M.

2014-03-01

Multiferroic materials exhibit multiple ferroic orders simultaneously and thus have great potential applications in information technology, sensing and actuation. Epitaxial hexagonal HoFeO3 (h-HFO) films are very promising candidates as multiferroic materials with room temperature ferromagnetism, because magnetic Ho3+ ions are expected to have stronger exchange interactions with Fe3+ ions than the well-studied h-LuFeO3 films. We report study of magnetic properties of epitaxial h-HFO thin films deposited using laser molecular beam epitaxy on Yttria-stabilized zirconia (YSZ) substrates. X-ray diffraction measurements confirmed the epitaxial registry and six-fold symmetry of the film. Temperature dependence of magnetization of the film measured by a Quantum Design SQUID magnetometer shows dominating paramagnetic characteristic. Element specific x-ray magnetic circular dichroism measurements performed at beamline 4-ID-C of the Advanced Photon Source show a ferromagnetic ordering of Fe and an exchange coupling between Ho3+ and Fe3+ ions. Work at BMC is supported by NSF Career award (DMR 1053854). Work at ANL is supported by US-DOE, Office of Science, BES (No. DE-AC02-06CH11357).

Development of Magnesium and Siloxane-Containing Vaterite and Its Composite Materials for Bone Regeneration

PubMed Central

Yamada, Shinya; Obata, Akiko; Maeda, Hirotaka; Ota, Yoshio; Kasuga, Toshihiro

2015-01-01

Development of novel biomaterials with Mg2+, Ca2+, and silicate ions releasability for bone regeneration is now in progress. Several inorganic ions have been reported to stimulate bone-forming cells. We featured Ca2+, silicate, and especially, Mg2+ ions as growth factors for osteoblasts. Various biomaterials, such as ceramic powders and organic–inorganic composites, that release the ions, have been developed and investigated for their cytocompatibilities in our previous work. Through the investigation, providing the three ions was found to be effective to activate osteogenic cells. Magnesium and siloxane-­containing vaterite was prepared by a carbonation process as an inorganic particle that can has the ability to simultaneously release Ca2+, silicate, and Mg2+ ions to biodegradable polymers. Poly (l-lactic acid) (PLLA)- and bioactive PLLA-based composites containing vaterite coatings were discussed regarding their degradability and cytocompatibility using a metallic Mg substrate as Mg2+ ion source. PLLA/SiV composite film, which has a releasability of silicate ions besides Ca2+ ion, was coated on a pure Mg substrate to be compared with the PLLA/V coating. The degradability and releasability of inorganic ions were morphologically and quantitatively monitored in a cell culture medium. The bonding strength between the coatings and Mg substrates was one of the key factors to control Mg2+ ion release from the substrates. The cell culture tests were conducted using mouse osteoblast-like cells (MC3T3-E1 cells); cellular morphology, proliferation, and differentiation on the materials were evaluated. The PLLA/V and PLLA/SiV coatings on Mg substrates were found to enhance the proliferation, especially the PLLA/SiV coating possessed a higher ability to induce the osteogenic differentiation of the cells. PMID:26697421

Compact ion accelerator source

DOEpatents

Schenkel, Thomas; Persaud, Arun; Kapadia, Rehan; Javey, Ali

2014-04-29

An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn; Peng, Jinxin; Ai, Wensi

2016-06-28

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrastmore » to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane

NASA Astrophysics Data System (ADS)

Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

2018-04-01

We mass-selected SiC3H9+ ions from various fragments produced through the decomposition of hexamethyldisilane, and finally produced low-energy SiC3H9+ ion beams. The ion beams were injected into Si(1 0 0) substrates and the dependence of deposited films on injected ion energy was then investigated. Injected ion energies were 20, 100, or 200 eV. Films obtained were investigated with X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. X-ray diffraction and X-ray photoelectron spectroscopy of the substrates obtained following the injection of 20 eV ions demonstrated the occurrence of silicon carbide film (3C-SiC) deposition. On the other hand, Raman spectroscopy showed that the films deposited by the injection of 100 or 200 eV ions included 3C-SiC plus diamond-like carbon. Ion beam deposition using hexamethyldisilane-derived 20 eV SiC3H9+ ions is an efficient technique for 3C-SiC film formation on Si substrates.

A selective iodide ion sensor electrode based on functionalized ZnO nanotubes.

PubMed

Ibupoto, Zafar Hussain; Khun, Kimleang; Willander, Magnus

2013-02-04

In this research work, ZnO nanotubes were fabricated on a gold coated glass substrate through chemical etching by the aqueous chemical growth method. For the first time a nanostructure-based iodide ion selective electrode was developed. The ZnO nanotubes were functionalized with miconazole ion exchanger and the electromotive force (EMF) was measured by the potentiometric method. The iodide ion sensor exhibited a linear response over a wide range of concentrations (1 × 10-6 to 1 × 10-1 M) and excellent sensitivity of -62 ± 1 mV/decade. The detection limit of the proposed sensor was found to be 5 × 10-7 M. The effects of pH, temperature, additive, plasticizer and stabilizer on the potential response of iodide ion selective electrode were also studied. The proposed iodide ion sensor demonstrated a fast response time of less than 5 s and high selectivity against common organic and the inorganic anions. All the obtained results revealed that the iodide ion sensor based on functionalized ZnO nanotubes may be used for the detection of iodide ion in environmental water samples, pharmaceutical products and other real samples.

A Selective Iodide Ion Sensor Electrode Based on Functionalized ZnO Nanotubes

PubMed Central

Ibupoto, Zafar Hussain; Khun, Kimleang; Willander, Magnus

2013-01-01

In this research work, ZnO nanotubes were fabricated on a gold coated glass substrate through chemical etching by the aqueous chemical growth method. For the first time a nanostructure-based iodide ion selective electrode was developed. The ZnO nanotubes were functionalized with miconazole ion exchanger and the electromotive force (EMF) was measured by the potentiometric method. The iodide ion sensor exhibited a linear response over a wide range of concentrations (1 × 10−6 to 1 × 10−1 M) and excellent sensitivity of −62 ± 1 mV/decade. The detection limit of the proposed sensor was found to be 5 × 10−7 M. The effects of pH, temperature, additive, plasticizer and stabilizer on the potential response of iodide ion selective electrode were also studied. The proposed iodide ion sensor demonstrated a fast response time of less than 5 s and high selectivity against common organic and the inorganic anions. All the obtained results revealed that the iodide ion sensor based on functionalized ZnO nanotubes may be used for the detection of iodide ion in environmental water samples, pharmaceutical products and other real samples. PMID:23385412

TiO2 films photocatalytic activity improvements by swift heavy ions irradiation

NASA Astrophysics Data System (ADS)

Rafik, Hazem; Mahmoud, Izerrouken; Mohamed, Trari; Abdenacer, Benyagoub

2014-08-01

TiO2 thin films synthesized by sol-gel on glass substrates are irradiated by 90 MeV Xe ions at various fluences and room temperature under normal incidence. The structural, electrical, optical and surface topography properties before and after Xe ions irradiation are investigated. X-ray diffraction (XRD) reveals that the crystallinity is gradually destroyed, and the films become amorphous above 5×1012 ions/cm2. The band gap is not affected by Xe ions irradiation as evidenced from the optical measurements. By contrast, the conductivity increases with raising Xe fluence. The energy band diagram established from the electrochemical characterization shows the feasibility of TiO2 films for the photo-electrochemical chromate reduction. Xe ion irradiation results in enhanced photocatalytic activity in aquatic medium, evaluated by the reduction of Cr(VI) into trivalent state. TiO2 films irradiated at 1013 Xe/cm2 exhibit the highest photoactivity; 69% of chromate (10 ppm) is reduced at pH 3 after 4 h of exposure to sunlight (1120 mW cm-2) with a quantum yield of 0.06%.

Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

PubMed

Mach, Jindřich; Šamořil, Tomáš; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš

2014-08-01

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

An investigation of enhanced secondary ion emission under Au(n)+ (n = 1-7) bombardment.

PubMed

Nagy, G; Gelb, L D; Walker, A V

2005-05-01

We investigate the mechanism of the nonlinear secondary ion yield enhancement using Au(n)+ (n = 1, 2, 3, 5, 7) primary ions bombarding thin films of Irganox 1010, DL-phenylalanine and polystyrene on Si, Al, and Ag substrates. The largest differences in secondary ion yields are found using Au+, Au2+, and Au3+ primary ion beams. A smaller increase in secondary ion yield is observed using Au5+ and Au7+ primary ions. The yield enhancement is found to be larger on Si than on Al, while the ion yield is smaller using an Au+ beam on Si than on Al. Using Au(n)+ ion structures obtained from Density Functional Theory, we demonstrate that the secondary yield enhancement is not simply due to an increase in energy per area deposited into the surface (energy deposition density). Instead, based on simple mechanical arguments and molecular dynamics results from Medvedeva et al, we suggest a mechanism for nonlinear secondary ion yield enhancement wherein the action of multiple concerted Au impacts leads to efficient energy transfer to substrate atoms in the near surface region and an increase in the number of secondary ions ejected from the surface. Such concerted impacts involve one, two, or three Au atoms, which explains well the large nonlinear yield enhancements observed going from Au+ to Au2+ to Au3+ primary ions. This model is also able to explain the observed substrate effect. For an Au+ ion passing through the more open Si surface, it contacts fewer substrate atoms than in the more dense Al surface. Less energy is deposited in the Si surface region by the Au+ primary ion and the secondary ion yield will be lower for adsorbates on Si than on Al. In the case of Au(n)+ the greater density of Al leads to earlier break-up of the primary ion and a consequent reduction in energy transfer to the near-surface region when compared with Si. This results in higher secondary ion yields and yield enhancements on silicon than aluminum substrates.

Explanation by the double-metal-ion mechanism of catalysis for the differential metal ion effects on the cleavage rates of 5′-oxy and 5′-thio substrates by a hammerhead ribozyme

PubMed Central

Zhou, De-Min; Zhang, Li-He; Taira, Kazunari

1997-01-01

In a previous examination using natural all-RNA substrates that contained either a 5′-oxy or 5′-thio leaving group at the cleavage site, we demonstrated that (i) the attack by the 2′-oxygen at C17 on the phosphorus atom is the rate-limiting step only for the substrate that contains a 5′-thio group (R11S) and (ii) the departure of the 5′ leaving group is the rate-limiting step for the natural all-RNA substrate (R11O) in both nonenzymatic and hammerhead ribozyme-catalyzed reactions; the energy diagrams for these reactions were provided in our previous publication. In this report we found that the rate of cleavage of R11O by a hammerhead ribozyme was enhanced 14-fold when Mg2+ ions were replaced by Mn2+ ions, whereas the rate of cleavage of R11S was enhanced only 2.2-fold when Mg2+ ions were replaced by Mn2+ ions. This result appears to be exactly the opposite of that predicted from the direct coordination of the metal ion with the leaving 5′-oxygen, because a switch in metal ion specificity was not observed with the 5′-thio substrate. However, our quantitative analyses based on the previously provided energy diagram indicate that this result is in accord with the double-metal-ion mechanism of catalysis. PMID:9405614

Porous aluminum room temperature anodizing process in a fluorinated-oxalic acid solution

NASA Astrophysics Data System (ADS)

Dhahri, S.; Fazio, E.; Barreca, F.; Neri, F.; Ezzaouia, H.

2016-08-01

Anodizing of aluminum is used for producing porous insulating films suitable for different applications in electronics and microelectronics. Porous-type aluminum films are most simply realized by galvanostatic anodizing in aqueous acidic solutions. The improvement in application of anodizing technique is associated with a substantial reduction of the anodizing voltage at appropriate current densities as well as to the possibility to carry out the synthesis process at room temperature in order to obtain a self-planarizing dielectric material incorporated in array of super-narrow metal lines. In this work, the anodizing of aluminum to obtain porous oxide was carried out, at room temperature, on three different substrates (glass, stainless steel and aluminum), using an oxalic acid-based electrolyte with the addition of a relatively low amount of 0.4 % of HF. Different surface morphologies, from nearly spherical to larger porous nanostructures with smooth edges, were observed by means of scanning electron microscopy. These evidences are explained by considering the formation, transport and adsorption of the fluorine species which react with the Al3+ ions. The behavior is also influenced by the nature of the original substrate.

Synthesis and transport characterization of electrochemically deposited CdTe nanowires

NASA Astrophysics Data System (ADS)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

2018-04-01

This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

Polycrystalline silicon ion sensitive field effect transistors

NASA Astrophysics Data System (ADS)

Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

2005-01-01

We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

Low methane flux from a constructed boreal wetland

NASA Astrophysics Data System (ADS)

Clark, M. G.; Humphreys, E.; Carey, S. K.

2016-12-01

The Sandhill Fen Watershed project in northern Alberta, Canada, is a pilot study in reconstructing a mixed upland and lowland boreal plain ecosystem. The physical construction of the 50 ha area was completed in 2012 and revegetation programs, through planting and seeding, began that same year and continued into 2013. Since then, the vegetation has developed a substantial cover over the reclaimed soil and peat substrates used to cap the engineered topography constructed from mine tailings. To monitor the dynamics of carbon cycling processes in this novel ecosystem, near weekly gas chamber measurements of methane fluxes were carried out over 3 growing seasons. Soil moisture, temperature and ion flux measurements, using Plant Root Simulator probes, were also collected alongside the gas flux plots. In the 3rd season, a transect was established in the lowlands along a moisture gradient to collect continuous reduction-oxidation potential measurements along with these other variables. Overall, methane effluxes remained low relative to what is expected for rewetted organic substrates. However, there is a trend over time towards increasing methane gas emissions that coincides with increasing fluxes of reduced metal ions and decreasing fluxes of sulphate in the fully saturated substrates. The suppressed levels of methane fluxes are possibly due to naturally occurring high levels of sulphate in the donor materials used to cap the ecosystem construction.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

NASA Astrophysics Data System (ADS)

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W.; Lippert, Thomas; Traversa, Enrico; Kilner, John A.

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Preparation and characterisation of carbon-free Cu(111) films on sapphire for graphene synthesis

NASA Astrophysics Data System (ADS)

Lehnert, J.; Spemann, D.; Surjuse, S.; Mensing, M.; Grüner, C.; With, P.; Schumacher, P.; Finzel, A.; Hirsch, D.; Rauschenbach, B.

2018-03-01

This work presents an investigation of carbon formed on polycrystalline Cu(111) thin films prepared by ion beam sputtering at room temperature on c-plane Al2O3 after thermal treatment in a temperature range between 300 and 1020°C. The crystallinity of the Cu films was studied by XRD and RBS/channeling and the surface was characterised by Raman spectroscopy, XPS and AFM for each annealing temperature. RBS measurements revealed the diffusion of the Cu into the Al2O3 substrate at high temperatures of > 700°C. Furthermore, a cleaning procedure using UV ozone treatment is presented to remove the carbon from the surface which yields essentially carbon-free Cu films that open the possibility to synthesize graphene of well-controlled thickness (layer number).

Hydrogenated amorphous carbon films on steel balls and Si substrates: Nanostructural evolutions and their trigging tribological behaviors

NASA Astrophysics Data System (ADS)

Wang, Yongfu; Wang, Yan; Zhang, Xingkai; Shi, Jing; Gao, Kaixiong; Zhang, Bin; Zhang, Junyan

2017-10-01

In this study, we prepared hydrogenated amorphous carbon films on steel balls and Si substrates (steel ball- and Si substrate-films) with different deposition time, and discussed their carbon nanostructural evolutions and tribological behaviors. The steel ball-film structure started to be graphite-like structure and then gradually transformed into fullerene-like (FL) structure. The Si substrate-film structure began in FL structure and kept it through the thickness. The difference may be result from the competition between high starting substrate temperature after additional nitriding applied on the steel balls (its supply power is higher than that in the film deposition), and relaxation of compressive stress from energized ion bombardment in film deposition process. The FL structural film friction couples could achieve ultra-low friction in open air. In particular, the Si substrate-film with 3 h, against the steel ball-film with 2 h and 3 h, exhibited super-low friction (∼0.009) and superlong wear life (∼5.5 × 105 cycles). Our result could widen the superlubricity scope from previously high load and velocity, to middle load and velocity.

Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

DOE PAGES

Tzeng, Yan-Kai; Zhang, Jingyuan Linda; Lu, Haiyu; ...

2017-02-09

Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. Finally, this variation allowedmore » rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.« less

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suski, T.; Litwin-Staszewska, E.; Piotrzkowski, R.

We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentionalmore » donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.« less

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Back-side readout semiconductor photomultiplier

DOEpatents

Choong, Woon-Seng; Holland, Stephen E

2014-05-20

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

Process for ion-assisted laser deposition of biaxially textured layer on substrate

DOEpatents

Russo, R.E.; Reade, R.P.; Garrison, S.M.; Berdahl, P.

1995-07-11

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film. 8 figs.

Process for ion-assisted laser deposition of biaxially textured layer on substrate

DOEpatents

Russo, Richard E.; Reade, Ronald P.; Garrison, Stephen M.; Berdahl, Paul

1995-01-01

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

Copper cladding on polymer surfaces by ionization-assisted deposition

NASA Astrophysics Data System (ADS)

Kohno, Tomoki; Tanaka, Kuniaki; Usui, Hiroaki

2018-03-01

Copper thin films were prepared on poly(ethylene terephthalate) (PET) and polyimide (PI) substrates by an ionization-assisted vapor deposition method. The films had a polycrystalline structure, and their crystallite size decreased with increasing ion acceleration voltage V a. Ion acceleration was effective in reducing the surface roughness of the films. Cross-sectional transmission electron microscopy revealed that the copper/polymer interface showed increased corrugation with increasing V a. The increase in V a also induced the chemical modification of polymer chains of the PET substrate, but the PI substrate underwent smaller modification after ion bombardment. Most importantly, the adhesion strength between the copper film and the PET substrate increased with increasing V a. It was concluded that ionization-assisted deposition is a promising technique for preparing metal clad layers on flexible polymer substrates.

Purification and characterization of peroxidase from cauliflower (Brassica oleracea L. var. botrytis) buds.

PubMed

Köksal, Ekrem; Gülçin, Ilhami

2008-01-01

Peroxidases (EC 1.11.1.7; donor: hydrogen peroxide oxidoreductase) are part of a large group of enzymes. In this study, peroxidase, a primer antioxidant enzyme, was purified with 19.3 fold and 0.2% efficiency from cauliflower (Brassica oleracea L.) by ammonium sulphate precipitation, dialysis, CM-Sephadex ion-exchange chromatography and Sephadex G-25 purification steps. The substrate specificity of peroxidase was investigated using 2,2'-azino-bis(3-ethylbenz-thiazoline-6-sulphonic acid) (ABTS), 2-methoxyphenol (guaiacol), 1,2-dihydroxybenzene (catechol), 1,2,3-trihyidroxybenzene (pyrogallol) and 4-methylcatechol. Also, optimum pH, optimum temperature, optimum ionic strength, stable pH, stable temperature, thermal inactivation conditions were determined for guaiacol/H(2)O(2), pyrogallol/H(2)O(2), ABTS/H(2)O(2), catechol/H(2)O(2) and 4-methyl catechol/H(2)O(2) substrate patterns. The molecular weight (M(w)) of this enzyme was found to be 44 kDa by gel filtration chromatography method. Native polyacrylamide gel electrophoresis (PAGE) was performed for isoenzyme determination and a single band was observed. K(m) and V(max) values were calculated from Lineweaver-Burk graph for each substrate patterns.

Saccharification of sunflower stalks using lignocellulases from a fungal consortium comprising Pholiota adiposa and Armillaria gemina.

PubMed

Ramachandran, Priyadharshini; Kim, Tae-Su; Dhiman, Saurabh Sudha; Li, Jinglin; Park, Ji-Hyun; Choi, Joon-Ho; Kim, Jae Young; Kim, Dongwook; Lee, Jung-Kul

2015-09-01

Lignocellulases from Armillaria gemina and Pholiota adiposa are efficient in hydrolyzing aspen and poplar biomass, respectively. In the present study, lignocellulosic enzymes obtained from a fungal consortium comprising P. adiposa and A. gemina were used for the saccharification of sunflower stalks. Sunflower stalks were thermochemically pretreated using 2 % NaOH at 50 °C for 24 h. The saccharification process parameters including substrate concentration, enzyme loading, pH, and temperature were optimized using response surface methodology to improve the saccharification yield. The highest enzymatic hydrolysis (84.3 %) was obtained using the following conditions: enzyme loading 10 FPU/g-substrate, substrate 5.5 %, temperature 50 °C, and pH 4.5. The hydrolysis yield obtained using the enzymes from the fungal consortium was equivalent to that obtained using a mixture of commercial enzymes Celluclast and Novozyme β-glucosidase. Addition of up to 500 ppm of heavy metal ions (As, Cu, Fe, Mn, Ni, Pb, and Zn) during saccharification did not significantly affect the saccharification yield. Thus, the biomass grown for phytoremediation of heavy metals can be used for the production of reducing sugars followed by ethanol fermentation.

Structure of the thermophilic l-Arabinose isomerase from Geobacillus kaustophilus reveals metal-mediated intersubunit interactions for activity and thermostability.

PubMed

Choi, Jin Myung; Lee, Yong-Jik; Cao, Thinh-Phat; Shin, Sun-Mi; Park, Min-Kyu; Lee, Han-Seung; di Luccio, Eric; Kim, Seong-Bo; Lee, Sang-Jae; Lee, Sang Jun; Lee, Sung Haeng; Lee, Dong-Woo

2016-04-15

Thermophilic l-arabinose isomerase (AI), which catalyzes the interconversion of l-arabinose and l-ribulose, can be used to produce d-tagatose, a sugar substitute, from d-galactose. Unlike mesophilic AIs, thermophilic AIs are highly dependent on divalent metal ions for their catalytic activity and thermostability at elevated temperatures. However, the molecular basis underlying the substrate preferences and metal requirements of multimeric AIs remains unclear. Here we report the first crystal structure of the apo and holo forms of thermophilic Geobacillus kaustophilus AI (GKAI) in hexamer form. The structures, including those of GKAI in complex with l-arabitol, and biochemical analyses revealed not only how the substrate-binding site of GKAI is formed through displacement of residues at the intersubunit interface when it is bound to Mn(2+), but also revealed the water-mediated H-bonding networks that contribute to the structural integrity of GKAI during catalysis. These observations suggest metal-mediated isomerization reactions brought about by intersubunit interactions at elevated temperatures are responsible for the distinct active site features that promote the substrate specificity and thermostability of thermophilic AIs. Copyright © 2016 Elsevier Inc. All rights reserved.

Plasma monitoring of the RLVIP-process with a Langmuir probe

NASA Astrophysics Data System (ADS)

Huber, D.; Hallbauer, A.; Pulker, H. K.

2005-09-01

The aim of this investigation was to study the characteristics of a reactive-low-voltage-high-current-ion-plating plasma and to correlate the observed plasma data with the properties of films deposited under such conditions. A Langmuir probe system (Smart Probe - Scientific Systems) was inserted into a Balzers BAP 800 ion plating plant above the e-gun evaporation source close to the insulated substrate holder. In this position during RLVIP deposition, plasma potential, floating potential, self-bias voltage, electron temperature, ion current density, and particle number density were measured and calculated, respectively. All measurements were performed in dependence of arc current (20-80A) and oxygen partial pressure (1 - 36 x 10-4mbar). With rising arc current the number of charged particles, the self-bias voltage between plasma and substrates as well as the energy of the condensing and bombarding species were increased. These data explain the increase of density, refractive index and mechanical stress of RLVIP-metal-oxide-layers, like Ta2O5 and Nb2O5, deposited with higher arc currents. An increase of gas pressure decreased the energy of the particles and therefore reduced slightly film density and refractive index. However, it improved chemistry and eliminated unwanted residual optical absorption and also decreased compressive mechanical film stress.

Growth and Characterization of Sn Doped β-Ga2O3 Thin Films and Enhanced Performance in a Solar-Blind Photodetector

NASA Astrophysics Data System (ADS)

Zhao, Xiaolong; Cui, Wei; Wu, Zhenping; Guo, Daoyou; Li, Peigang; An, Yuehua; Li, Linghong; Tang, Weihua

2017-04-01

Ga2- x Sn x O3 thin films were deposited on c-plane Al2O3 (0001) substrates with different Sn content by laser molecular beam epitaxy technology (L-MBE). The Sn content x was varied from 0 to 1.0. (bar{2}01) oriented β-phase Ga2- x Sn x O3 thin films were obtained at the substrate temperature of 850°C in the vacuum pressure of 5 × 10-5 Pa. The crystal lattice expanded and the energy band-gap decreased with the increase of Sn content for Sn4+ ions incorporated into the Ga site. The n-type conductivity was generated effectively through doping Sn4+ ions in the Ga2O3 lattice in the oxygen-poor conditions. The solar-blind (SB) photodetectors (PDs) based on Ga2- x Sn x O3 ( x = 0, 0.2) thin films were fabricated. The current intensity and responsivity almost increased by one order of magnitude and the relaxation time constants became shorter for x = 0.2. Our work suggests that the performance of PD can be improved by doping Sn4+ ions in Ga2O3 thin films.

Organic solar cells using a ZnO/Cu/ZnO anode deposited by ion beam sputtering at room temperature for flexible devices.

PubMed

El Hajj, Ahmad; Lucas, Bruno; Barbot, Anthony; Antony, Rémi; Ratier, Bernard; Aldissi, Matt

2013-07-01

The development of indium-free transparent conductive oxides (TCOs) on polymer substrates for flexible devices requires deposition at low temperatures and a limited thermal treatment. In this paper, we investigated the optical and electrical properties of ZnO/Cu/ZnO multi-layer electrodes obtained by ion beam sputtering at room temperature for flexible optoelectronic devices. This multilayer structure has the advantage of adjusting the layer thickness to favor antireflection and surface plasmon resonance of the metallic layer. We found that the optimal electrode is made up of a 10 nm-thick Cu layer between two 40 nm-thick ZnO layers, which results in a sheet resistance of 12 omega/(see symbol), a high transmittance of 85% in the visible range, and the highest figure of merit of 5.4 x 10(-3) (see symbol)/omega. A P3HT:PCBM-based solar cell showed a power conversion efficiency (PCE) of 2.26% using the optimized ZnO (40 nm)/Cu (10 nm)/ZnO (40 nm) anode.

Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Paul, T.; Ghosh, A.

2017-04-01

We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

NASA Astrophysics Data System (ADS)

Voronov, D. L.; Gawlitza, P.; Cambie, R.; Dhuey, S.; Gullikson, E. M.; Warwick, T.; Braun, S.; Yashchuk, V. V.; Padmore, H. A.

2012-05-01

Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr+ ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voronov, D. L.; Cambie, R.; Dhuey, S.

2012-05-01

Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimizemore » degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr{sup +} ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.« less

Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voronov, D. L.; Gawlitza, Peter; Cambie, Rossana

2012-05-07

Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. In this study, to minimize the shadowing effects, we used an ion-beamsputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in ordermore » to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr + ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Lastly, details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.« less

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

NASA Astrophysics Data System (ADS)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-03-01

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Nanocrystalline SiC film thermistors for cryogenic applications

NASA Astrophysics Data System (ADS)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Chemistry of the metal-polymer interfacial region.

PubMed

Leidheiser, H; Deck, P D

1988-09-02

In many polymer-metal systems, chemical bonds are formed that involve metal-oxygen-carbon complexes. Infrared and Mössbauer spectroscopic studies indicate that carboxylate groups play an important role in some systems. The oxygen sources may be the polymer, the oxygen present in the oxide on the metal surface, or atmospheric oxygen. Diffusion of metal ions from the substrate into the polymer interphase may occur in some systems that are cured at elevated temperatures. It is unclear whether a similar, less extensive diffusion occurs over long time periods in systems maintained at room temperature. The interfacial region is dynamic, and chemical changes occur with aging at room temperature. Positron annihilation spectroscopy may have application to characterizing the voids at the metal-polymer interface.

Investigation to develop a method to apply diffusion barrier to high strength fibers

NASA Technical Reports Server (NTRS)

Veltri, R. D.; Paradis, R. D.; Douglas, F. C.

1975-01-01

A radio frequency powered ion plating process was used to apply the diffusion barriers of aluminum oxide, yttrium oxide, hafnium oxide and titanium carbide to a substrate tungsten fiber. Each of the coatings was examined as to its effect on both room temperature strength and tensile strength of the base tungsten fiber. The coated fibers were then overcoated with a nickel alloy to become single cell diffusion couples. These diffusion couples were exposed to 1093 C for 24 hours, cycled between room temperature and 1093 C, and given a thermal anneal for 100 hours at 1200 C. Tensile testing and metallographic examinations determined that the hafnium oxide coating produced the best high temperature diffusion barrier for tungsten of the four coatings.

Depth Profiles of Mg, Si, and Zn Implants in GaN by Trace Element Accelerator Mass Spectrometry

NASA Astrophysics Data System (ADS)

Ravi Prasad, G. V.; Pelicon, P.; Mitchell, L. J.; McDaniel, F. D.

2003-08-01

GaN is one of the most promising electronic materials for applications requiring high-power, high frequencies, or high-temperatures as well as opto-electronics in the blue to ultraviolet spectral region. We have recently measured depth profiles of Mg, Si, and Zn implants in GaN substrates by the TEAMS particle counting method for both matrix and trace elements, using a gas ionization chamber. Trace Element Accelerator Mass Spectrometry (TEAMS) is a combination of Secondary Ion Mass Spectrometry (SIMS) and Accelerator Mass Spectrometry (AMS) to measure trace elements at ppb levels. Negative ions from a SIMS like source are injected into a tandem accelerator. Molecular interferences inherent with the SIMS method are eliminated in the TEAMS method. Negative ion currents are extremely low with GaN as neither gallium nor nitrogen readily forms negative ions making the depth profile measurements more difficult. The energies of the measured ions are in the range of 4-8 MeV. A careful selection of mass/charge ratios of the detected ions combined with energy-loss behavior of the ions in the ionization chamber eliminated molecular interferences.

Electrical transport properties of epitaxial titanium nitride nanowire

NASA Astrophysics Data System (ADS)

Makise, K.; Shinozaki, B.

2018-03-01

We have measured the transport properties of epitaxial titanium nitride (TiN) nanowires. Epitaxial TiN layer, deposited by dc magnetron sputtering on MgO(100) substrates at growth temperature T = 1073 K. Samples of nanowire were fabricated by e-beam lithography and reactive ion etching. Although TiN films with 100 nm-thickness have superconducting transition temperature T C ∼ 5 K, nanowires does not appear resistive transition until 0.15 K. The magnetoresistance (MR) are always negative. Furthermore for MR experimental results, we attempt to fit the data using one-dimensional weak localization theory. In addition we observed oscillations of magnetoresistance below 5 K.

Foundations of low-temperature plasma enhanced materials synthesis and etching

NASA Astrophysics Data System (ADS)

Oehrlein, Gottlieb S.; Hamaguchi, Satoshi

2018-02-01

Low temperature plasma (LTP)-based synthesis of advanced materials has played a transformational role in multiple industries, including the semiconductor industry, liquid crystal displays, coatings and renewable energy. Similarly, the plasma-based transfer of lithographically defined resist patterns into other materials, e.g. silicon, SiO2, Si3N4 and other electronic materials, has led to the production of nanometer scale devices that are the basis of the information technology, microsystems, and many other technologies based on patterned films or substrates. In this article we review the scientific foundations of both LTP-based materials synthesis at low substrate temperature and LTP-based isotropic and directional etching used to transfer lithographically produced resist patterns into underlying materials. We cover the fundamental principles that are the basis of successful application of the LTP techniques to technological uses and provide an understanding of technological factors that may control or limit material synthesis or surface processing with the use of LTP. We precede these sections with a general discussion of plasma surface interactions, the LTP-generated particle fluxes including electrons, ions, radicals, excited neutrals and photons that simultaneously contact and modify surfaces. The surfaces can be in the line of sight of the discharge or hidden from direct interaction for structured substrates. All parts of the article are extensively referenced, which is intended to help the reader study the topics discussed here in more detail.

Cow dung: a potential biomass substrate for the production of detergent-stable dehairing protease by alkaliphilic Bacillus subtilis strain VV.

PubMed

Vijayaraghavan, Ponnuswamy; Vijayan, Aija; Arun, Arumugaperumal; Jenisha, John Kennady; Vincent, Samuel Gnana Prakash

2012-01-01

Cow dung, a cheap and easily available source of energy, was used as the substrate for the production of alkaline protease by solid-state fermentation using the Bacillus subtilis strain VV. In order to achieve the maximum yield of this enzyme, the following optimum process parameters are needed: fermentation period (72 h), pH (10.0), moisture content (140%), inoculum (25%), temperature (30-40°C), carbon source (2% (w/w) maltose) and nitrogen source (1% (w/w) urea). The protease was stable over a broad temperature range (30-50°C) and pH (8.0-10.0), with maximum activity at 50°C and pH 10.0. Among the divalent ions tested, Ca(2+) (0.01 M) increased enzyme activity. The purified protease, after being subjected to sodium dodecyl sulphate-polyacrylamide gel electrophoresis, was found to have a molecular mass of 38.5 kDa. The enzyme was solvent-and surfactant-stable and showed activity even after 24 h incubation along with various commercially available detergents. This enzyme possessed dehairing properties for animal hide after 16 h of incubation at room temperature. From these results it is evident that cow dung is a potential substrate for the production of a detergent-stable, dehairing protease by B. subtilis. This enzyme has a lot of potential applications in the detergent and leather-processing industries.

High-speed thin-film transistors on single-crystalline, unstrained- and strained-silicon-based nanomembranes

NASA Astrophysics Data System (ADS)

Yuan, Hao-Chih

This research focuses on developing high-performance single-crystal Si-based nanomembranes and high-frequency thin-film transistors (TFTs) using these nanomembranes on flexible plastic substrates. Unstrained Si or SiGe nanomembranes with thickness of several tens to a couple of hundred nanometers are derived from silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) and are subsequently transferred and integrated with flexible plastic host substrates via a one-step dry printing technique. Biaxial tensile-strained Si membranes that utilize elastic strain-sharing between Si and additionally grown SiGe thin films are also successfully integrated with plastic host substrates and exhibit predicted strain status and negligible density of dislocations. Biaxial tensile strain enhances electron mobility and lowers Schottky contact resistance. As a result, flexible TFTs built on the strained Si-membranes demonstrate much higher electron effective mobility and higher drive current than the unstrained counterpart. The dependence of drive current and transconductance on uniaxial tensile strain introducing by mechanical bending is also discussed. A novel combined "hot-and-cold" TFT fabrication process is developed specifically for realizing a wide spectrum of micro-electronics that can exhibit RF performance and can be integrated on low-temperature plastic substrate. The "hot" process that consists of ion implant and high-temperature annealing for desired doping type, profile, and concentration is realized on the bulk SOI/SGOI substrates followed by the "cold" process that includes room-temperature silicon-monoxide (SiO) deposition as gate dielectric layer to ensure the process compatibility with low-temperature, low-cost plastics. With these developments flexible Si-membrane n-type RF TFTs for analog applications and complementary TFTs for digital applications are demonstrated for the first time. RF TFTs with 1.5-mum channel length have demonstrated record-high f T and fmax values of 2.04 and 7.8 GHz, respectively. A small-signal equivalent circuit model study on the RF TFTs reveals the physics of how device layout affects fT and f max, which paves the way for further performance optimization and realization of integrated circuit on flexible substrate in the future.

Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam

NASA Astrophysics Data System (ADS)

Wei, Long; Tabuki, Yasushi; Tanigawa, Shoichiro

1993-01-01

Defects in reactive ion-etched Si have been investigated by means of a slow positron beam. A thin carbon-containing film (<30 Å) was formed on the Si surface after reactive ion etching (RIE). Vacancy-type defects, which were estimated to distribute over 1200 Å in depth by numerical fitting using the positron trapping model, were observed in the damaged subsurface region of Si. Aside from ion bombardment, ultraviolet radiation is also presumed to affect the formation of vacancies, interstitials in oxide and the formation of vacancies in Si substrate. The ionization-enhanced diffusion (IED) mechanism is expected to promote the diffusion of vacancies and interstitials into Si substrate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, D.J.; Warner, J.A.; LeBarron, N.

Processes that use energetic ions for large substrates require that the time-averaged erosion effects from the ion flux be uniform across the surface. A numerical model has been developed to determine this flux and its effects on surface etching of a silica/photoresist combination. The geometry of the source and substrate is very similar to a typical deposition geometry with single or planetary substrate rotation. The model was used to tune an inert ion-etching process that used single or multiple Kaufman sources to less than 3% uniformity over a 30-cm aperture after etching 8 {micro}m of material. The same model canmore » be used to predict uniformity for ion-assisted deposition (IAD).« less

High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Ponchak, George E.; Mueller, Carl H.; Croke, Edward T.

2004-01-01

SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.

Comparison of Three Plasma Sources for Ambient Desorption/Ionization Mass Spectrometry

NASA Astrophysics Data System (ADS)

McKay, Kirsty; Salter, Tara L.; Bowfield, Andrew; Walsh, James L.; Gilmore, Ian S.; Bradley, James W.

2014-09-01

Plasma-based desorption/ionization sources are an important ionization technique for ambient surface analysis mass spectrometry. In this paper, we compare and contrast three competing plasma based desorption/ionization sources: a radio-frequency (rf) plasma needle, a dielectric barrier plasma jet, and a low-temperature plasma probe. The ambient composition of the three sources and their effectiveness at analyzing a range of pharmaceuticals and polymers were assessed. Results show that the background mass spectrum of each source was dominated by air species, with the rf needle producing a richer ion spectrum consisting mainly of ionized water clusters. It was also seen that each source produced different ion fragments of the analytes under investigation: this is thought to be due to different substrate heating, different ion transport mechanisms, and different electric field orientations. The rf needle was found to fragment the analytes least and as a result it was able to detect larger polymer ions than the other sources.

Comparison of three plasma sources for ambient desorption/ionization mass spectrometry.

PubMed

McKay, Kirsty; Salter, Tara L; Bowfield, Andrew; Walsh, James L; Gilmore, Ian S; Bradley, James W

2014-09-01

Plasma-based desorption/ionization sources are an important ionization technique for ambient surface analysis mass spectrometry. In this paper, we compare and contrast three competing plasma based desorption/ionization sources: a radio-frequency (rf) plasma needle, a dielectric barrier plasma jet, and a low-temperature plasma probe. The ambient composition of the three sources and their effectiveness at analyzing a range of pharmaceuticals and polymers were assessed. Results show that the background mass spectrum of each source was dominated by air species, with the rf needle producing a richer ion spectrum consisting mainly of ionized water clusters. It was also seen that each source produced different ion fragments of the analytes under investigation: this is thought to be due to different substrate heating, different ion transport mechanisms, and different electric field orientations. The rf needle was found to fragment the analytes least and as a result it was able to detect larger polymer ions than the other sources.

Evolution of temperature and chemical parameters during composting of the pig slurry solid fraction amended with natural zeolite.

PubMed

Venglovsky, J; Sasakova, N; Vargova, M; Pacajova, Z; Placha, I; Petrovsky, M; Harichova, D

2005-01-01

A 3-month experiment was conducted at a 300 kg scale to observe decomposition processes in pig slurry solids amended with two different doses of natural Slovak zeolite-clinoptilolite (substrates S1 and S2, 1% and 2% of zeolite by weight, respectively) in comparison with the control (unamended solids). The experimental and control substrates were stored outdoors in sheltered static piles at ambient temperatures ranging from 8.0 to 34.7 degrees C. The solid fraction (SF) of pig slurry was obtained by separation on vibration sieves prior to slurry treatment with activated sludge. The initial water content of the SF was 77.1% and no water was added to the piles during the storage. The temperature in the core of the piles was recorded throughout the experiment. By day 3 and 5 of storage (1% and 2% zeolite, resp.), the temperature in the substrates S1 and S2 exceeded 55 degrees C and remained above this level for 15 days while the highest temperature recorded in the control during the experiment was 29.8 degrees C. Samples from the core of the piles were taken periodically to determine pH, dry matter at 105 degrees C (DM), ash (550 degrees C/4 h), ammonia nitrogen (N-NH(4)(+)), nitrate nitrogen (N-NO(3)(-)), total nitrogen (N(t)), total phosphorus (P(t)); total organic carbon (TOC) was computed. The results showed that pH levels in S1 and S2 remained below that in the control for most of the thermophilic stage. This may be related to water-soluble ammonia and the affinity of zeolites to ammonium ions. A significant decrease in the level of ammonia nitrogen in water extracts from S1 and S2 was observed between days 5 and 35 in comparison with the control. The values of ash also differed and corresponded to the intensity of the decomposition processes in the respective substrates.

AFM characterization of model nuclear fuel oxide multilayer structures modified by heavy ion beam irradiation

NASA Astrophysics Data System (ADS)

Hawley, M. E.; Devlin, D. J.; Reichhardt, C. J.; Sickafus, K. E.; Usov, I. O.; Valdez, J. A.; Wang, Y. Q.

2010-10-01

This work explored a potential new model dispersion fuel form consisting of an actinide material embedded in a radiation tolerant matrix that captures fission products (FPs) and is easily separated chemically as waste from the fuel material. To understand the stability of this proposed dispersion fuel form design, an idealized model system composed of a multilayer film was studied. This system consisted of a tri-layer structure of an MgO layer sandwiched between two HfO 2 layers. HfO 2 served as a surrogate fissile material for UO 2 while MgO represented a stable, fissile product (FP) getter that is easily separated from the fissile material. This type of multilayer film structure allowed us to control the size of and spacing between each layer. The films were grown at room temperature by e-beam deposition on a Si(1 1 1) substrate and post-annealed annealing at a range of temperatures to crystallize the HfO 2 layers. The 550 °C annealed sample was subsequently irradiated with 10 MeV Au 3+ ions at a range of fluences from 5 × 10 13 to 3.74 × 10 16 ions/cm 2. Separate single layer constituent films and the substrate were also irradiated at 5 × 10 15 and 8 × 10 14 and 2 × 10 16, respectively. After annealing and irradiation, the samples were characterized using atomic force imaging techniques to determine local changes in microstructure and mechanical properties. All samples annealed above 550 °C cracked. From the AFM results we observed both crack healing and significant modification of the surface at higher fluences.

Synthesis of transparent BaTiO3 nanoparticle/polymer composite film using DC field

NASA Astrophysics Data System (ADS)

Kondo, Yusuke; Okumura, Yasuko; Oi, Chifumi; Sakamoto, Wataru; Yogo, Toshinobu

2008-10-01

Transparent BaTiO3 nanoparticle/polymer composite films were synthesized from titanium-organic film and barium ion in aqueous solution under direct current (DC) field. Titanium-organic precursor was synthesized from titanium isopropoxide, acetylacetone and methacrylate derivative. The UV treatment was effective to increase the anti-solubility of the titanium-organic film during DC processing. BaTiO3 nanoparticles were crystallized in the precursor films on stainless substrates without high temperature process, as low as 40°C. The crystallite size of BaTiO3 increased with increasing reaction temperature from 40 to 50 °C at 3.0 V/cm. BaTiO3 nanoparticles also grew in size with increasing reaction time from 15 min to 45 min at 3.0 V/cm and 50 °C. Transparent BaTiO3 nanoparticle/polymer films were synthesized on stainless substrates at 3.0 V/cm and 50°C for 45 min.

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2004-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Influence of Yttrium Ion-Implantation on the Growth Kinetics and Micro-Structure of NiO Oxide Film

NASA Astrophysics Data System (ADS)

Jin, Huiming; Adriana, Felix; Majorri, Aroyave

2008-02-01

Isothermal and cyclic oxidation behaviours of pure and yttrium-implanted nickel were studied at 1000°C in air. Scanning electronic microscopy (SEM) and transmission electronic microscopy (TEM) were used to examine the micro-morphology and structure of oxide scales formed on the nickel substrate. It was found that Y-implantation significantly improved the anti-oxidation ability of nickel in both isothermal and cyclic oxidizing experiments. Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium. The main reason for the improvement in anti-oxidation of nickel was that Y-implantation greatly reduced the growing speed and grain size of NiO. This fine-grained NiO oxide film might have better high temperature plasticity and could relieve parts of compressive stress by means of creeping, and maintained a ridge character and a relatively low internal stress level. Hence yttrium ion-implantation remarkably enhanced the adhesion of protective NiO oxide scale formed on the nickel substrate.

Optical Properties of Ar Ions Irradiated Nanocrystalline ZrC and ZrN Thin Films

NASA Technical Reports Server (NTRS)

Martin, C.; Miller, K. H.; Makino, H.; Craciun, D.; Simeone, D.; Craciun, V.

2017-01-01

Thin nanocrystalline ZrC and ZrN films (less than 400 nanometers), grown on (100) Si substrates at a substrate temperature of 500 degrees Centigrade by the pulsed laser deposition (PLD) technique, were irradiated by 800 kiloelectronvolts Ar ion irradiation with fluences from 1 times 10(sup 14) atoms per square centimeter up to 2 times 10(sup 15) atoms per square centimeter. Optical reflectance data, acquired from as-deposited and irradiated films, in the range of 500-50000 per centimeter (0.06–6 electronvolts), was used to assess the effect of irradiation on the optical and electronic properties. Both in ZrC and ZrN films we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate, i.e. possible increase in mobility, at higher irradiation flux. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major structural changes.

Human Salivary Aldehyde Dehydrogenase: Purification, Kinetic Characterization and Effect of Ethanol, Hydrogen Peroxide and Sodium Dodecyl Sulfate on the Activity of the Enzyme.

PubMed

Alam, Md Fazle; Laskar, Amaj Ahmed; Choudhary, Hadi Hasan; Younus, Hina

2016-09-01

Human salivary aldehyde dehydrogenase (hsALDH) enzyme appears to be the first line of defense in the body against exogenous toxic aldehydes. However till date much work has not been done on this important member of the ALDH family. In this study, we have purified hsALDH to homogeneity by diethylaminoethyl-cellulose (DEAE-cellulose) ion-exchange chromatography in a single step. The molecular mass of the homodimeric enzyme was determined to be approximately 108 kDa. Four aromatic substrates; benzaldehyde, cinnamaldehyde, 2-naphthaldehyde and 6-methoxy-2-naphthaldehyde were used for determining the activity of pure hsALDH. K m values for these substrates were calculated to be 147.7, 5.31, 0.71 and 3.31 μM, respectively. The best substrates were found to be cinnamaldehyde and 2-naphthaldehyde since they exhibited high V max /K m values. 6-methoxy-2-naphthaldehyde substrate was used for further kinetic characterization of pure hsALDH. The pH and temperature optima of hsALDH were measured to be pH 8 and 45 °C, respectively. The pure enzyme is highly unstable at high temperatures. Ethanol, hydrogen peroxide and SDS activate hsALDH, therefore it is safe and beneficial to include them in mouthwashes and toothpastes in low concentrations.

Phosphates (V) recovery from phosphorus mineral fertilizers industry wastewater by continuous struvite reaction crystallization process.

PubMed

Hutnik, Nina; Kozik, Anna; Mazienczuk, Agata; Piotrowski, Krzysztof; Wierzbowska, Boguslawa; Matynia, Andrzej

2013-07-01

Continuous DT MSMPR (Draft Tube Mixed Suspension Mixed Product Removal) crystallizer was provided with typical wastewater from phosphorus mineral fertilizers industry (pH < 4, 0.445 mass % of PO4(3-), inorganic impurities presence), dissolved substrates (magnesium and ammonium chlorides) and solution alkalising the environment of struvite MgNH4PO4·6H2O reaction crystallization process. Research ran in constant temperature 298 K assuming stoichiometric proportions of substrates or 20% excess of magnesium ions. Influence of pH (8.5-10) and mean residence time (900-3600 s) on product size distribution, its chemical composition, crystals shape, size-homogeneity and process kinetics was identified. Crystals of mean size ca. 25-37 μm and homogeneity CV 70-83% were produced. The largest crystals, of acceptable homogeneity, were produced using 20% excess of magnesium ions, pH 9 and mean residence time 3600 s. Under these conditions nucleation rate did not exceed 9 × 10(7) 1/(s m(3)) according to SIG (Size Independent Growth) MSMPR kinetic model. Linear crystal growth rate was 4.27 × 10(-9) m/s. Excess of magnesium ions influenced struvite reaction crystallization process yield advantageously. Concentration of phosphate(V) ions decreased from 0.445 to 9.2 × 10(-4) mass %. This can be regarded as a very good process result. In product crystals, besides main component - struvite, all impurities from wastewater were detected analytically. Copyright © 2013 Elsevier Ltd. All rights reserved.

Influences of metal ions crosslinked alginate based coatings on thermal stability and fire resistance of cotton fabrics.

PubMed

Pan, Ying; Wang, Wei; Liu, Longxiang; Ge, Hua; Song, Lei; Hu, Yuan

2017-08-15

Bio-based and phosphorus-free coating was fabricated by layer-by-layer assembly method to obtain the flame retardant cotton fabric. For the first time, the modified cotton fabrics were prepared by utilizing positively charged polyethylenimine and negatively charged alginate together with subsequent crosslinking of barium, nickel and cobalt ions. Scanning electron microscopy and energy-dispersive X-ray demonstrated that the metal ions crosslinked coating was successfully constructed on the substrate. The thermal stability and flame retardancy were investigated by thermogravimetric analysis (TGA) and horizontal flame tests. TGA results showed that the degradation of the coated cotton fabrics were retarded at high temperature and the char residue of the cotton fabrics were improved after covered with the barium, nickel and cobalt ions crosslinked coatings. Furthermore, the fire resistance of cotton-Ba sample was enhanced significantly compared with the untreated sample, as evidenced by the obvious reduction (28%) of flame spread rate and complete char residue. Finally, the washing durability of coating on the fabric was enhanced after metal ions crosslinked with alginate based coating. Copyright © 2017. Published by Elsevier Ltd.

Effects of ion and nanosecond-pulsed laser co-irradiation on the surface nanostructure of Au thin films on SiO{sub 2} glass substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Ruixuan; Meng, Xuan; Takayanagi, Shinya

2014-04-14

Ion irradiation and short-pulsed laser irradiation can be used to form nanostructures on the surfaces of substrates. This work investigates the synergistic effects of ion and nanosecond-pulsed laser co-irradiation on surface nanostructuring of Au thin films deposited under vacuum on SiO{sub 2} glass substrates. Gold nanoparticles are randomly formed on the surface of the substrate after nanosecond-pulsed laser irradiation under vacuum at a wavelength of 532 nm with a repetition rate of 10 Hz and laser energy density of 0.124 kJ/m{sup 2}. Gold nanoparticles are also randomly formed on the substrate after 100-keV Ar{sup +} ion irradiation at doses of upmore » to 3.8 × 10{sup 15} ions/cm{sup 2}, and nearly all of these nanoparticles are fully embedded in the substrate. With increasing ion irradiation dose (number of incident laser pulses), the mean diameter of the Au nanoparticles decreases (increases). However, Au nanoparticles are only formed in a periodic surface arrangement after co-irradiation with 6000 laser pulses and 3.8 × 10{sup 15} ions/cm{sup 2}. The periodic distance is ∼540 nm, which is close to the wavelength of the nanosecond-pulsed laser, and the mean diameter of the Au nanoparticles remains at ∼20 nm with a relatively narrow distribution. The photoabsorption peaks of the ion- or nanosecond-pulsed laser-irradiated samples clearly correspond to the mean diameter of Au nanoparticles. Conversely, the photoabsorption peaks for the co-irradiated samples do not depend on the mean nanoparticle diameter. This lack of dependence is likely caused by the periodic nanostructure formed on the surface by the synergistic effects of co-irradiation.« less

The Selective Epitaxy of Silicon at Low Temperatures.

NASA Astrophysics Data System (ADS)

Lou, Jen-Chung

1991-01-01

This dissertation has developed a process for the selective epitaxial growth (SEG) of silicon at low temperatures using a dichlorosilane-hydrogen mixture in a hot-wall low pressure chemical vapor deposition (LPCVD) reactor. Some basic issues concerning the quality of epilayers --substrate preparation, ex-situ and in-situ cleaning, and deposition cycle, have been studied. We find it necessary to use a plasma etch to open epitaxial windows for the SEG of Si. A cycled plasma etch, a thin sacrificial oxide growth, and an oxide etching step can completely remove plasma-etch-induced surface damage and contaminants, which result in high quality epilayers. A practical wafer cleaning step is developed for low temperature Si epitaxial growth. An ex-situ HF vapor treatment can completely remove chemical oxide from the silicon surface and retard the reoxidation of the silicon surface. An in-situ low-concentration DCS cycle can aid in decomposition of surface oxide during a 900 ^circC H_2 prebake step. An HF vapor treatment combined with a low-concentration of DCS cycle consistently achieves defect-free epilayers at 850^circC and lower temperatures. We also show that a BF_sp{2}{+ } or F^+ ion implantation is a potential ex-situ wafer cleaning process for SEG of Si at low temperatures. The mechanism for the formation of surface features on Si epilayers is also discussed. Based on O ^+ ion implantation, we showed that the oxygen incorporation in silicon epilayers suppresses the Si growth rate. Therefore, we attribute the formation of surface features to the local reduction of the Si growth rate due to the dissolution of oxide islands at the epi/substrate interface. Finally, with this developed process for the SEG of silicon, defect-free overgrown epilayers are also obtained. This achievement demonstrates the feasibility for the future silicon-on-oxide (SOI) manufacturing technology.

Optimization of L(+)-Lactic Acid Fermentation Without Neutralisation of Rhizopus Oryzae Mutant RK02 by Low-Energy Ion Implantation

NASA Astrophysics Data System (ADS)

Li, Wen; Wang, Tao; Yang, Yingge; Liu, Dan; Fan, Yonghong; Wang, Dongmei; Yang, Qian; Yao, Jianming; Zheng, Zhiming; Yu, Zengliang

2008-04-01

In order to get an industrial strain which can yield a high concentration of lactic acid for ISPR (in situ product removal), the original strain Rhizopus oryzae RE3303 was mutated by low-energy ion beam implantation. A mutant RK02 was screened, and the factors such as the substrate concentration, nitrogen source concentration, inoculum size, seed age, aeration and temperature that affect the production of lactic acid were studied in detail. Under optimal conditions, the maximum concentration of L(+)-lactic acid reached 34.85 g/L after 30 h shake-flask cultivation without adding any neutralisation (5% Glucose added), which was a 146% increase in lactic acid production after ion implantation compared with the original strain. It was also shown that RK02 can be used in ISPR to reduce the number of times of separation.

Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

NASA Astrophysics Data System (ADS)

Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

1981-02-01

An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

A Recovery Process of Active Cathode Paste from Spent Li-Ion Batteries

NASA Astrophysics Data System (ADS)

Toma, C. M.; Ghica, G. V.; Buzatu, M.; Petrescu, M. I.; Vasile, E.; Iacob, G.

2017-06-01

In this work, the depleted active paste from spent lithium-ion batteries was separated from cathode by means of ultrasonic vibration. First the unit cells were discharged in brine at room temperature, for safety reasons. Then anode, separator, electrolyte and cathode were separated. Spent Li-Ion batteries were introduced into a washing container to separate electrode materials from their support substrate: active paste (lithium cobalt oxide - LiCoO2) from cathode (Al foil) and graphite from anode (Cu foil). The Al foil and Cu foil were also recovered. A cleaning efficiency of 91% was achieved using a solution of 1.5 M acetic acid after a 6 minute time of exposure into an ultrasonic washing container with a frequency and electric power of 50 kHz and 50 W, respectively. The XRD patterns and the morphology of LiCoO2 powder were presented.

Modeling of life limiting phenomena in the discharge chamber of an electron bombardment ion thruster

NASA Technical Reports Server (NTRS)

Handoo, Arvind K.; Ray, Pradosh K.

1991-01-01

An experimental facility to study the low energy sputtering of metal surfaces with ions produced by an ion gun is described. The energy of the ions ranged from 10 to 500 eV. Cesium ions with energies from 100 to 500 eV were used initially to characterize the operation of the ion gun. Next, argon and xenon ions were used to measure the sputtering yields of cobalt (Co), Cadmium (Cd), and Chromium (Cr) at an operating temperature of 2x10(exp -5) Torr. The ion current ranged from 0.0135 micro-A at 500 eV. The targets were electroplated on a copper substrate. The surface density of the electroplated material was approx. 50 micro-g/sq cm. The sputtered atoms were collected on an aluminum foil surrounding the target. Radioactive tracers were used to measure the sputtering yields. The sputtering yields of Cr were found to be much higher than those of Co and Cd. The yields of Co and Cd were comparable, with Co providing the higher yields. Co and Cd targets were observed to sputter at energies as low as 10 eV for both argon and xenon ions. The Cr yields could not be measured below 20 eV for argon ions and 15 eV for xenon ions. On a linear scale the yield energy curves near the threshold energies exhibit a concave nature.

Phosphorus-doped glass proton exchange membranes for low temperature direct methanol fuel cells

NASA Astrophysics Data System (ADS)

Prakash, Shruti; Mustain, William E.; Park, SeongHo; Kohl, Paul A.

Phosphorus-doped silicon dioxide thin films were used as ion exchange membranes in low temperature proton exchange membrane fuel cells. Phosphorus-doped silicon dioxide glass (PSG) was deposited via plasma-enhanced chemical vapor deposition (PECVD). The plasma deposition of PSG films allows for low temperature fabrication that is compatible with current microelectronic industrial processing. SiH 4, PH 3 and N 2O were used as the reactant gases. The effect of plasma deposition parameters, substrate temperature, RF power, and chamber pressure, on the ionic conductivity of the PSG films is elucidated. PSG conductivities as high as 2.54 × 10 -4 S cm -1 were realized, which is 250 times higher than the conductivity of pure SiO 2 films (1 × 10 -6 S cm -1) under identical deposition conditions. The higher conductivity films were deposited at low temperature, moderate pressure, limited reactant gas flow rate, and high RF power.

A Facile Method to In-Situ Synthesize Porous Ni₂GeO₄ Nano-Sheets on Nickel Foam as Advanced Anode Electrodes for Li-Ion Batteries.

PubMed

Ma, Delong; Shi, Xiaomin; Hu, Anming

2016-11-19

A strategy for growth of porous Ni₂GeO₄ nanosheets on conductive nickel (Ni) foam with robust adhesion as a high-performance electrode for Li-ion batteries is proposed and realized, through a facile two-step method. It involves the low temperature hydro-thermal synthesis of bimetallic (Ni, Ge) hydroxide nanosheets precursor on Ni foam substrates and subsequent thermal transformation to porous Ni₂GeO₄ nanosheets. The as-prepared Ni₂GeO₄ nanosheets possess many interparticle mesopores with a size range from 5 to 15 nm. The hierarchical structure of porous Ni₂GeO₄ nanosheets supported by Ni foam promises fast electron and ion transport, large electroactive surface area, and excellent structural stability. The efficacy of the specially designed structure is demonstrated by the superior electrochemical performance of the generated Ni₂GeO₄ nanosheets including a high capacity of 1.8 mA·h·cm -2 at a current density of 50 μA·cm -2 , good cycle stability, and high power capability at room temperature. Because of simple conditions, this fabrication strategy may be easily extended to other mixed metal oxides (M x GeO y ).

Graphene Transistor fabricated by Helium Ion Milling

NASA Astrophysics Data System (ADS)

Zhang, Kaiwen; Zhao, Xiangming; Xu, Xiangfan; Vignesh, Viswanathan; Li, Baowen; Pickard, Daniel; Özyilmaz, Barbaros; Department of Physics, National University of Singapore Team; Department of Electrical; Computer Engineering, National University of Singapore Team; eNanoCore, National University of Singapore Team

2011-03-01

We report the direct patterning of graphene for various nano-device applications. The Helium Ion Microscope (HIM), able to resolve nano-scale features on solid samples with an edge resolution of a mere 0.25 nm, has a number of attributes which make it attractive for the imaging of graphene structures. Even more compelling is the ability to directly modify graphene, through surface sputtering, enabling direct pattern transfer for the fabrication of graphene devices. The integration of the HIM with a vector pattern generator (Nano Pattern Generation System, NPGS), provides the capability to directly pattern graphene into nano-ribbons. We have successfully fabricated sub-100nm graphene nano-ribbon devices on Si/SiO2 substrate. Resistance measurement has been made as a function of temperature.

Fabrication of Material and Devices for Very High Density Information Storage.

DTIC Science & Technology

1986-11-24

IKawanishi, "Miagnetic anid opticeal propert I e of Co. I It substituted garnet films p~rep~ared by the lPE niethod and its ipplication to hlermtmt"Ile( i...medium. Highly Bi-substituted garnet films on glass and G( substrates were successfully RF sputtered and characterized by the group of M. Goni.1 The filns...writing due to the temperature dependence of the coercive force 11. Preparation of bismuth iron garnet films by ion bean sputtering onto GGG

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Jones (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Microwave plasma CVD of NANO structured tin/carbon composites

DOEpatents

Marcinek, Marek [Warszawa, PL; Kostecki, Robert [Lafayette, CA

2012-07-17

A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

Synthesis of One-Dimensional and Hyperbranched Nanomaterials for Lithium-Ion Battery Solid Electrolytes

NASA Astrophysics Data System (ADS)

Yang, Ting

Lithium-ion batteries can fail and catch fire when overcharged, exposed to high temperatures or short-circuited due to the highly flammable organic liquid used in the electrolyte. Using inorganic solid electrolyte materials can potentially improve the safety factor. Additionally, nanostructured electrolyte materials may further enhanced performance by taking advantage of their large aspect ratio. In this work, the synthesis of two promising nanostructured solid electrolyte materials was explored. Amorphous lithium niobate nanowires were synthesized through the decomposition of a niobium-containing complex in a structure-directing solvent using a reflux method. Lithium lanthanum titanate was obtained via solid state reaction with titanium oxide nanowires as the titanium precursor, but the nanowire morphology could not be preserved due to high temperature sintering. Hyperbranched potassium lanthanum titanate was synthesized through hydrothermal route. This was the first time that hyperbranched nanowires with perovskite structure were made without any catalyst or substrate. This result has the potential to be applied to other perovskite materials.

A fibrinolytic, alkaline and thermostable metalloprotease from the newly isolated Serratia sp RSPB11.

PubMed

Lakshmi Bhargavi, P; Prakasham, R S

2013-10-01

This study shows the purification and characterization of metalloprotease (serralysin) with fibrin and fibrinogenolytic property, from the newly isolated Serratia marcescens RSPB11. This protein macro molecule was more stable over a wide range of pH (6-10) and the temperatures up to 60 °C. It showed optimum enzyme activity at pH 9.0 and at a temperature of 37 °C. Inhibitory analysis revealed that this enzyme is metalloprotease and its enzyme activity could be regained by the addition of Co(2+), Cu(2+), Fe(2+), Mg(2+)and Zn(2+) ions after chelation of ions with EDTA. This enzyme showed the Michaelis-Menten's constant Km (1.261 mg/ml) for its substrate, casein and the observed maximum attainable velocity was Vmax (24,842 U/min). The purified enzyme showed an apparent molecular mass of approximately 50 kDa in SDS-PAGE. The results also suggested that this serralysin is having potential application thrombolytic therapy. Copyright © 2013 Elsevier B.V. All rights reserved.

Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian

2016-08-09

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantationmore » process.« less

Microstructural response of InGaN to swift heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ~275 nm in thickness grown on a GaN/Al 2O 3 substrate was irradiated with 290 MeV 238U 32+ ions to a fluence of 1.2 x 12 cm -2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18Ga 0.82N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18Ga 0.82N is ~9 nm, as determined by HIM examination. Combinationmore » of the HIM and RBS/C data suggests that the material in the track is likely to be highly disordered or fully amorphized, in contrast to a crystalline structure within the ion track in GaN. Lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed after irradiation.« less

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

NASA Astrophysics Data System (ADS)

Nassisi, Vincenzo; Delle Side, Domenico; Turco, Vito; Martina, Luigi

2018-01-01

In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS) coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Ion Diffusion-Directed Assembly Approach to Ultrafast Coating of Graphene Oxide Thick Multilayers.

PubMed

Zhao, Xiaoli; Gao, Weiwei; Yao, Weiquan; Jiang, Yanqiu; Xu, Zhen; Gao, Chao

2017-10-24

The layer-by-layer (LbL) assembly approach has been widely used to fabricate multilayer coatings on substrates with multiple cycles, whereas it is hard to access thick films efficiently. Here, we developed an ion diffusion-directed assembly (IDDA) strategy to rapidly make multilayer thick coatings in one step on arbitrary substrates. To achieve multifunctional coatings, graphene oxide (GO) and metallic ions were selected as the typical building blocks and diffusion director in IDDA, respectively. With diffusion of metallic ions from substrate to negatively charged GO dispersion spontaneously (i.e., from high-concentration region to low-concentration region), GO was assembled onto the substrate sheet-by-sheet via sol-gel transformation. Because metallic ions with size of subnanometers can diffuse directionally and freely in the aqueous dispersion, GO was coated on the substrate efficiently, giving rise to films with desired thickness up to 10 μm per cycle. The IDDA approach shows three main merits: (1) high efficiency with a μm-scale coating rate; (2) controllability over thickness and evenness; and (3) generality for substrates of plastics, metals and ceramics with any shapes and morphologies. With these merits, IDDA strategy was utilized in the efficient fabrication of functional graphene coatings that exhibit outstanding performance as supercapacitors, electromagnetic interference shielding textiles, and anticorrosion coatings. This IDDA approach can be extended to other building blocks including polymers and colloidal nanoparticles, promising for the scalable production and application of multifunctional coatings.

Molecular mobility, morphology, and ion conduction in ionomers for electroactive devices

NASA Astrophysics Data System (ADS)

Tudryn, Gregory J.

A sequential study of ion-containing polymers capable of ion solvation with varied ion content, dielectric constant, and counterions is presented in this dissertation in order to compare ion transport properties in ionomers with various ionic interactions. Structure-property relationships in these ion containing polymers are defined using x-ray scattering, rheology and dielectric spectroscopy, enabling the quantification of ion transport dynamics. Poly(ethylene oxide), (PEO) based ionomers are investigated in order to probe the relation between ion conduction and segmental relaxation, and copolymers of PEO and Poly(tetramethylene oxide), (PTMO) further develop an understanding of the trade-off between ion solvation and segmental dynamics. Ionomers with ionic liquid counterions probe diffuse charge interactions and steric effects on ion transport, and incorporation of ionic liquids into ionomer membranes such as Nafion provides desirable thermal and ion conducting properties which extend the use of such membranes for electroactive devices. PEO ionomers exhibit a strong relation between ionic conductivity and segmental dynamics, providing insight that the glass transition temperature, Tg, dominates the ion conduction mechanism. Increasing temperature induces aggregation of ionic groups as evidenced by the static dielectric constant and X-ray scattering as a function of temperature, revealing the contribution of ionic dipoles in the measured dielectric constant. The trade-off between ion solvation and fast polymer segmental dynamics are quantified in copolymer ionomers of PEO and lower Tg PTMO. While conducting ion content remains nearly unchanged, conductivity is lowered upon incorporation of PTMO, because the vast majority of the PTMO microphase separates from the PEO-rich microdomain that remains continuous and contributes most of the ion conduction. Dielectric constants and X-ray scattering show consistent changes with temperature that suggest a cascading aggregation process in Na ionomers as ionic dipoles thermally randomize and lower the measured dielectric constant of the medium, leading to further aggregation. We observe amplified microphase-separation through ionic groups preferentially solvated by PEO chains, as seen in block copolymers with added salt. Even at 25%PEO / 75%PTMO the ionomers have VFT temperature dependence of conducting ion mobility, meaning that the 25% PEO/ion microphase is still continuous A model is developed to describe the frequency dependent storage and loss modulus and the delay in Rouse motion due to ion association lifetime, as functions of ion content and molecular weight for our low molecular weight ionomers. The ion rearrangement relaxation in dielectric spectroscopy is clearly the ion association lifetime that controls terminal dynamics in linear viscoelasticity, allowing a simple sticky Rouse model, using the most-probable distribution based on NMR Mn, to fully describe master curves of the frequency dependent storage and loss modulus. Using insight from ionic interaction strength, ionic liquids are used as counterions, effectively plasticizing the ionomers without added solvent. Ionic interactions were weakened with increasing counterion size, and with modification of cations using ether-oxygen, promoting self-solvation, which increases conducting ion density by an order of magnitude. Room temperature ionic liquids were subsequently used in combination with NafionRTM membranes as electroactive substrates to correlate ion transport to morphology as a function of volume fraction of ionic liquid. This study illuminated the critical volume uptake of ionic liquid in Nafion, identifying percolation of ionic pathways and a significant increase in dielectric constant at low frequencies, indicating an increase in the number density of ions capable of polarizing at the electrode surface. Consequently, the fundamental information obtained about the structure-property relations of ionomers can be used to predict and design advanced ion-containing polymers to be used in battery membranes and a variety of electroactive devices, including actuators and electromechanical sensors.

Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

NASA Astrophysics Data System (ADS)

Shi, Hualiang

Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma generator from ICP to RIE, increasing hard mask thickness, replacing O2 by CO2 plasma, increasing CO addition in CO/O 2 plasma, and increasing N2 addition in CO2/N 2 plasma. By combining analytical techniques with the Kramers-Kronig dispersion relation and quantum chemistry calculation, the origin of dielectric loss was ascribed to the physisorbed water molecules. Post-ash CH4 plasma treatment, vapor silylation process, and UV radiation were developed to repair plasma damage.

Solid-substrate bioprocessing of cow dung for the production of carboxymethyl cellulase by Bacillus halodurans IND18.

PubMed

Vijayaraghavan, P; Prakash Vincent, S G; Dhillon, G S

2016-02-01

The production of carboxymethyl cellulase (CMCase) by Bacillus halodurans IND18 under solid substrate fermentation (SSF) using cow dung was optimized through two level full factorial design and second order response surface methodology (RSM). The central composite design (CCD) was employed to optimize the vital fermentation parameters, such as pH of the substrate, concentration of nitrogen source (peptone) and ion (sodium dihydrogen phosphate) sources in medium for achieving higher enzyme production. The optimum medium composition was found to be 1.46% (w/w) peptone, 0.095% (w/w) sodium dihydrogen phosphate and pH 8.0. The model prediction of 4210IU/g enzyme activity at optimum conditions was verified experimentally as 4140IU/g. The enzyme was active over a broad temperature range (40-60±1°C) and pH (7.0-9.0) with maximal activity at 60±1°C and pH 8.0. This study demonstrated the potential of cow dung as novel substrate for CMCase production. Copyright © 2015 Elsevier Ltd. All rights reserved.

A highly sensitive solid substrate room temperature phosphorimetry for carbaryl detection based on its activating effect on NaIO4 oxidizing fluorescein.

PubMed

Liu, Jiaming; Huang, Qitong; Liu, Zhen-bo; Lin, Xiaofeng; Zhang, Li-Hong; Lin, Chang-Qing; Zheng, Zhi-Yong

2014-11-01

Fluorescein (HFin) could emit strong and stable room temperature phosphorescence (RTP) signal on polyamide membrane (PAM) using Pb(2+) as the ion perturber. Carbaryl could activate effect on NaIO4 oxidating HFin, which caused the RTP signal of the system to quench sharply. The phosphorescence intensity (ΔI p) of activating system higher 3.3 times (119.4/36.0) than that of non-activating system, and is directly proportional to the content of carbaryl. Thus, an activating solid substrate room temperature phosphorimetry (SSRTP) for carbaryl detection has been established. This sensitive (the limit of quantification (LOQ) was 2.0 × 10(-13) g mL(-1)), selective, simple and rapid method has been applied to determine trace carbaryl in water samples with the results consisting with those obtained by fluorimetry, showing its high accuracy. The apparent activation energy (E) and rate constant (k) of this activating reaction were 20.77 kJ mol(-1) and 1.85 × 10(-4) s(-1), respectively. Meanwhile, the mechanism of activating SSRTP for carbaryl detection was also discussed using infrared spectra (IR).

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2003-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Effects of temperature and surface contamination on D retention in ultrathin Li films on TZM

DOE PAGES

Capece, A. M.; Roszell, J. P.; Skinner, C. H.; ...

2014-10-29

Here in this work, we investigate deuterium retention at the Mo-Li interface by studying thin Li films three monolayers thick on a TZM Mo alloy. Li films at temperatures between 315 and 460 K were exposed to a deuterium ion beam and D retention was measured using temperature programmed desorption. In the absence of oxygen, D is retained as LiD, and the relative amount of retained D decreases with increasing substrate temperature. In three-monolayer thick lithium oxide films, the amount of D retained was 2.5 times higher than the amount retained as LiD in the metallic Li film. However, oxygenmore » reduces the thermal stability of D in the film, causing D 2O and D 2 to be released from the surface at temperatures 150-200 K below the LiD decomposition temperature. These results highlight the importance of maintaining a metallic Li layer for high D retention in Li films on TZM at elevated temperatures.« less

Effects of temperature and surface contamination on D retention in ultrathin Li films on TZM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capece, A. M.; Roszell, J. P.; Skinner, C. H.

Here in this work, we investigate deuterium retention at the Mo-Li interface by studying thin Li films three monolayers thick on a TZM Mo alloy. Li films at temperatures between 315 and 460 K were exposed to a deuterium ion beam and D retention was measured using temperature programmed desorption. In the absence of oxygen, D is retained as LiD, and the relative amount of retained D decreases with increasing substrate temperature. In three-monolayer thick lithium oxide films, the amount of D retained was 2.5 times higher than the amount retained as LiD in the metallic Li film. However, oxygenmore » reduces the thermal stability of D in the film, causing D 2O and D 2 to be released from the surface at temperatures 150-200 K below the LiD decomposition temperature. These results highlight the importance of maintaining a metallic Li layer for high D retention in Li films on TZM at elevated temperatures.« less

Effects of Substrate Surface Topology on NiFe/Cu/Co Spin Valve Characteristics

NASA Astrophysics Data System (ADS)

Kim, Hyeong-Jun; Jeong, Won-Cheol; Cho, Kwon-Ku; Kim, Young-Keun; Joo, Seung-Ki

2000-08-01

In order to control the crystallinity of sputter-deposited NiFe/Cu/Co spin valve thin films, surface topology of 4°tilt-cut Si(111) substrates was modified in various ways prior to formation of the spin valves. In case of the mirror polished substrate, NiFe and Co showed fcc (110) preferred orientation with in-plane uniaxial magnetic anisotropy. The easy axes of these magnetic layers were aligned in 90° to each other and giant magnetoresistance (GMR) was measured to be 4.5% at room temperature. The spin valves formed on the amorphized substrate by Ar ion mass doping, however, did not show magnetic anisotropy due to the loss of crystallinity and no appreciable GMR could be observed. The spin valves deposited on the unpolished substrate, of which the average surface roughness was measured to be a few microns, turned out to show a sound multilayeredness as well as crystallinity, but GMR was reduced to 3.5%. Tailing in the magnetoresistance (R-H) curve occurred in the spin valves formed on the unpolished substrate, and it was thought to be attributed to the shape anisotropy related to the interface roughness of the films. Detailed discussion on the relationship between GMR and crystallinity of the magnetic layers has been made with the results of simple simulation.

Magnetic studies of Co2+, Ni2+, and Zn2+-modified DNA double-crossover lattices

NASA Astrophysics Data System (ADS)

Dugasani, Sreekantha Reddy; Oh, Young Hoon; Gnapareddy, Bramaramba; Park, Tuson; Kang, Won Nam; Park, Sung Ha

2018-01-01

We fabricated divalent-metal-ion-modified DNA double-crossover (DX) lattices on a glass substrate and studied their magnetic characteristics as a function of ion concentrations [Co2+], [Ni2+] and [Zn2+]. Up to certain critical concentrations, the DNA DX lattices with ions revealed discrete S-shaped hysteresis, i.e. characteristics of strong ferromagnetism, with significant changes in the coercive field, remanent magnetization, and susceptibility. Induced magnetic dipoles formed by metal ions in DNA duplex in the presence of a magnetic field imparted ferromagnetic behaviour. By considering hysteresis and the magnitude of magnetization in a magnetization-magnetic field curve, Co2+-modified DNA DX lattices showed a relatively strong ferromagnetic nature with an increasing (decreasing) trend of coercive field and remanent magnetization when [Co2+] ≤ 1 mM ([Co2+] > 1 mM). In contrast, Ni2+ and Zn2+-modified DNA DX lattices exhibited strong and weak ferromagnetic behaviours at lower (≤1 mM for Ni2+ and ≤0.5 mM for Zn2+) and higher (>1 mM for Ni2+ and >0.5 mM for Zn2+) concentrations of ions, respectively. About 1 mM of [Co2+], [Ni2+] and [Zn2+] in DNA DX lattices was of special interest with regard to physical characteristics and was identified to be an optimum concentration of each ion. Finally, we measured the temperature-dependent magnetic characteristics of the metal-ion-modified DNA DX lattices. Nonzero magnetization and inverse susceptibility with almost constant values were observed between 25 and 300 K, with no indication of a magnetic transition. This indicated that the magnetic Curie temperatures of Co2+, Ni2+ and Zn2+-modified DNA DX lattices were above 300 K.

Atomic precision etch using a low-electron temperature plasma

NASA Astrophysics Data System (ADS)

Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

2016-03-01

Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

NASA Astrophysics Data System (ADS)

Onaka-Masada, Ayumi; Nakai, Toshiro; Okuyama, Ryosuke; Okuda, Hidehiko; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari; Sueoka, Koji

2018-02-01

The effect of oxygen (O) concentration on the Fe gettering capability in a carbon-cluster (C3H5) ion-implanted region was investigated by comparing a Czochralski (CZ)-grown silicon substrate and an epitaxial growth layer. A high Fe gettering efficiency in a carbon-cluster ion-implanted epitaxial growth layer, which has a low oxygen region, was observed by deep-level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). It was demonstrated that the amount of gettered Fe in the epitaxial growth layer is approximately two times higher than that in the CZ-grown silicon substrate. Furthermore, by measuring the cathodeluminescence, the number of intrinsic point defects induced by carbon-cluster ion implantation was found to differ between the CZ-grown silicon substrate and the epitaxial growth layer. It is suggested that Fe gettering by carbon-cluster ion implantation comes through point defect clusters, and that O in the carbon-cluster ion-implanted region affects the formation of gettering sinks for Fe.

Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge

PubMed Central

Scopece, Daniele; Döbeli, Max; Passerone, Daniele; Maeder, Xavier; Neels, Antonia; Widrig, Beno; Dommann, Alex; Müller, Ulrich; Ramm, Jürgen

2016-01-01

Abstract The pre-treatment of substrate surfaces prior to deposition is important for the adhesion of physical vapour deposition coatings. This work investigates Si surfaces after the bombardment by energetic Cr ions which are created in cathodic arc discharges. The effect of the pre-treatment is analysed by X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and in-depth X-ray photoemission spectroscopy and compared for Cr vapour produced from a filtered and non-filtered cathodic arc discharge. Cr coverage as a function of ion energy was also predicted by TRIDYN Monte Carlo calculations. Discrepancies between measured and simulated values in the transition regime between layer growth and surface removal can be explained by the chemical reactions between Cr ions and the Si substrate or between the substrate surface and the residual gases. Simulations help to find optimum and more stable parameters for specific film and substrate combinations faster than trial-and-error procedure. PMID:27877854

Substrate Profile and Metal-ion Selectivity of Human Divalent Metal-ion Transporter-1*

PubMed Central

Illing, Anthony C.; Shawki, Ali; Cunningham, Christopher L.; Mackenzie, Bryan

2012-01-01

Divalent metal-ion transporter-1 (DMT1) is a H+-coupled metal-ion transporter that plays essential roles in iron homeostasis. DMT1 exhibits reactivity (based on evoked currents) with a broad range of metal ions; however, direct measurement of transport is lacking for many of its potential substrates. We performed a comprehensive substrate-profile analysis for human DMT1 expressed in RNA-injected Xenopus oocytes by using radiotracer assays and the continuous measurement of transport by fluorescence with the metal-sensitive PhenGreen SK fluorophore. We provide validation for the use of PhenGreen SK fluorescence quenching as a reporter of cellular metal-ion uptake. We determined metal-ion selectivity under fixed conditions using the voltage clamp. Radiotracer and continuous measurement of transport by fluorescence assays revealed that DMT1 mediates the transport of several metal ions that were ranked in selectivity by using the ratio Imax/K0.5 (determined from evoked currents at −70 mV): Cd2+ > Fe2+ > Co2+, Mn2+ ≫ Zn2+, Ni2+, VO2+. DMT1 expression did not stimulate the transport of Cr2+, Cr3+, Cu+, Cu2+, Fe3+, Ga3+, Hg2+, or VO+. 55Fe2+ transport was competitively inhibited by Co2+ and Mn2+. Zn2+ only weakly inhibited 55Fe2+ transport. Our data reveal that DMT1 selects Fe2+ over its other physiological substrates and provides a basis for predicting the contribution of DMT1 to intestinal, nasal, and pulmonary absorption of metal ions and their cellular uptake in other tissues. Whereas DMT1 is a likely route of entry for the toxic heavy metal cadmium, and may serve the metabolism of cobalt, manganese, and vanadium, we predict that DMT1 should contribute little if at all to the absorption or uptake of zinc. The conclusion in previous reports that copper is a substrate of DMT1 is not supported. PMID:22736759

Parametric evaluation of a dual-layer dynamic hyperfiltration membrane for recovery of spacecraft wash water at elevated temperature

NASA Technical Reports Server (NTRS)

Brandon, C. A.; Gaddis, J. L.

1975-01-01

Performance data consisting of solute rejections and product flux have been measured, as dependent on the operational parameters. These parameters were pressure, 5,000,000 N/sq m (750 psia) to 7,000,000 N/sq m (1040 psia); temperature, 347 K (165 F) to 368 K (200 F); velocity, 1.6 m/s to 10 m/s; and concentration (up to 14x). Tests were carried out on analog wash water. Data taken include rejections of organic materials (TOC), ammonia, urea, and an assortment of ions. The membrane used was a dual-layer, polyacrylic acid over zirconium oxide, deposited in situ on a porcelain ceramic substrate.

Interplay of point defects, biaxial strain, and thermal conductivity in homoepitaxial SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Wiedigen, S.; Kramer, T.; Feuchter, M.; Knorr, I.; Nee, N.; Hoffmann, J.; Kamlah, M.; Volkert, C. A.; Jooss, Ch.

2012-02-01

Separating out effects of point defects and lattice strain on thermal conductivity is essential for improvement of thermoelectric properties of SrTiO3. We study relations between defects generated during deposition, induced lattice strain, and their impact on thermal conductivity κ in homoepitaxial SrTiO3 films prepared by ion-beam sputtering. Lowering the deposition temperature gives rise to lattice expansion by enhancement of point defect density which increases the hardness of the films. Due to a fully coherent substrate-film interface, the lattice misfit induces a large biaxial strain. However, we can show that the temperature dependence of κ is mainly sensitive on the defect concentration.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

NASA Astrophysics Data System (ADS)

Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

2018-02-01

The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

NASA Astrophysics Data System (ADS)

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I.-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

2017-10-01

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of Ti O2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in V O2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

DOE PAGES

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; ...

2017-10-23

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. Here in this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO 2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO 2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system aremore » directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.« less

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se 2 solar cells on glass substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo

The precise control of alkali-metal concentrations in Cu(In,Ga)Se 2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance frommore » the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.« less

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se 2 solar cells on glass substrate

DOE PAGES

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; ...

2018-03-07

The precise control of alkali-metal concentrations in Cu(In,Ga)Se 2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance frommore » the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.« less

Synthesis and characterizations of nanoscale single crystal GaN grown by ion assisted gas source MBE

NASA Astrophysics Data System (ADS)

Cui, Bentao; Cohen, P. I.

2004-03-01

Nanoscale patterns could be induced by ion bombardment [1, 2]. In this study, an in-situ real time light scattering technique, combined with Reflection High Energy Electron Diffraction (RHEED), were used to study the surface morphology evolution during the ion beam assisted growth of GaN in a gas source MBE system. Ga was provided by a thermal effusion cell. Ammonia was used as the nitrogen source. A hot-filament Kaufman ion source was used to supply sub-KeV ion beams. Sapphire and MOCVD GaN templates were used as the substrates. A custom-designed Desorption Mass Spectrometer (DMS) was used to calibrate the growth temperature and determine the growth rate. Before growing GaN, the sapphire substrates were pretreated in an ion flux and then annealed for cleaning. The sapphire surface was then nitrided in ammonia at 1100K for about 10 min. After nitridation, a thin GaN buffer layer was prepared by a sequence of adsorption and annealing steps. During the growth, the short-range surface morphology and film quality were monitored in situ by RHEED. In a real-time way, the long-range surface morphology was monitored in-situ by light scattering technique. Photodiode array detector and CCD camera were used to record the reflected light scattering intensity and spectra profile respectively. Periodical patterns, such as ripple, have been observed during ion bombardment on GaN with or without growth. A linear theory (from Bradley and Harper 1988 [3]) has been modified to explain the dependence of ripple wavelength on ion species and ion energy. Partially supported by the National Science Foundation and the Air Force Office of Scientific Research. [1]. J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 82, 2330 (1998); J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 84, 5800 (2000). [2]. S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt et al.. Science 285, 1551 (1999). [3]. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988).

Processing of hydroxylapatite coatings on titanium alloy bone prostheses

DOEpatents

Nastasi, M.A.; Levine, T.E.; Mayer, J.W.; Pizziconi, V.B.

1998-10-06

Processing of hydroxylapatite sol-gel films on titanium alloy bone prostheses. A method utilizing non-line-of-sight ion beam implantation and/or rapid thermal processing to provide improved bonding of layers of hydroxylapatite to titanium alloy substrates while encouraging bone ingrowth into the hydroxylapatite layers located away from the substrate, is described for the fabrication of prostheses. The first layer of hydroxylapatite is mixed into the substrate by the ions or rapidly thermally annealed, while subsequent layers are heat treated or densified using ion implantation to form layers of decreasing density and larger crystallization, with the outermost layers being suitable for bone ingrowth.

Processing of hydroxylapatite coatings on titanium alloy bone prostheses

DOEpatents

Nastasi, Michael A.; Levine, Timothy E.; Mayer, James W.; Pizziconi, Vincent B.

1998-01-01

Processing of hydroxylapatite sol-gel films on titanium alloy bone prostheses. A method utilizing non-line-of-sight ion beam implantation and/or rapid thermal processing to provide improved bonding of layers of hydroxylapatite to titanium alloy substrates while encouraging bone ingrowth into the hydroxylapatite layers located away from the substrate, is described for the fabrication of prostheses. The first layer of hydroxylapatite is mixed into the substrate by the ions or rapidly thermally annealed, while subsequent layers are heat treated or densified using ion implantation to form layers of decreasing density and larger crystallization, with the outermost layers being suitable for bone ingrowth.

Mechanical behaviour of metallic thin films on polymeric substrates and the effect of ion beam assistance on crack propagation

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, M.; Coupeau, C.; Colin, J.

2005-01-10

The mechanisms of crack propagation in metallic films on polymeric substrates have been studied through in situ atomic force microscopy observations of thin films under tensile stresses and finite element stress calculations. Two series of films - ones deposited with ion beam assistance, the others without - have been investigated. The observations and stress calculations show that ion beam assistance can change drastically the propagation of cracks in coated materials: by improving the adhesion film/substrate, it slows down the delamination process, but in the same time enhances the cracks growth in the thickness of the material.

Control of Ion Selectivity in LeuT: Two Na+ Binding Sites with two different mechanisms

PubMed Central

Noskov, Sergei Y.; Roux, Benoît

2016-01-01

The x-ray structure of LeuT, a bacterial homologue of Na+/Cl−-dependent neurotransmitter transporter, provides a great opportunity to better understand the molecular basis of monovalent cation selectivity in ion-coupled transporters. LeuT possesses two ion-binding sites, NA1 and NA2, which are highly selective for Na+. Extensive all-atom free energy molecular dynamics simulations of LeuT embedded in an explicit membrane are performed at different temperatures and various occupancy states of the binding sites to dissect the molecular mechanism of ion selectivity. The results show that the two binding sites display robust selectivity for Na+ over K+ or Li+, the competing ions of most similar radii. Of particular interest, the mechanism primarily responsible for selectivity for each of the two binding sites appears to be different. In site NA1, selectivity for Na+ over K+ arises predominantly from the strong electrostatic field arising from the negatively charged carboxylate group of the leucine substrate coordinating the ion directly. In site NA2, which comprises only neutral ligands, selectivity for Na+ is enforced by the local structural restraints arising from the hydrogen-bonding network and the covalent connectivity of the poly-peptide chain surrounding the ion according to a snug-fit mechanism. PMID:18280500

Effect of negative bias on TiAlSiN coating deposited on nitrided Zircaloy-4

NASA Astrophysics Data System (ADS)

Jun, Zhou; Zhendong, Feng; Xiangfang, Fan; Yanhong, Liu; Huanlin, Li

2018-01-01

TiAlSiN coatings were deposited on the nitrided Zircaloy-4 by multi-arc ion plating at -100 V, -200 V and -300 V. In this study, the high temperature oxidation behavior of coatings was tested by a box-type resistance furnace in air for 3 h at 800 °C; the macro-morphology of coatings was observed and analyzed by a zoom-stereo microscope; the micro-morphology of coatings was analyzed by a scanning electron microscopy (SEM), and the chemical elements of samples were analyzed by an energy dispersive spectroscopy(EDS); the adhesion strength of the coating to the substrate was measured by an automatic scratch tester; and the phases of coatings were analyzed by an X-ray diffractometer(XRD). Results show that the coating deposited at -100 V shows better high temperature oxidation resistance behavior, at the same time, Al elements contained in the coating is of the highest amount, meanwhile, the adhesion strength of the coating to the substrate is the highest, which is 33N. As the bias increases, high temperature oxidation resistance behavior of the coating weakens first and then increases, the amount of large particles on the surface of the coating increases first and then decreases whereas the density of the coating decreases first and then increases, and adhesion strength of the coating to the substrate increases first and then weakens. The coating's quality is relatively poor when the bias is -200 V.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Sintering temperature effect of divalent europium ion doped tetra-calcium phosphate phosphors for latent fingerprint detection

NASA Astrophysics Data System (ADS)

Hong, Woo Tae; Park, Jin Young; Je, Jae-Yong; Yang, Hyun Kyoung

2018-07-01

Ca4(PO4)2O:Eu2+ (CPO:Eu2+) phosphors were successfully synthesized by high-energy ball milling. In order to study the effect of sintering temperature, the phosphors were synthesized at various sintering temperatures. The crystal structure of CPO:Eu2+ was determined to be monoclinic P21. Owing to the f-d transitions of the Eu2+ ions in the CPO:Eu2+ phosphors, the PL spectra of the phosphors showed an intense red emission centered at 635 nm with 418 nm excitation. Using high-energy ball milling, a more intense emission (compared to that reported from other research) can be visually observed with human eyes in the form of orange-red light, which is helpful in latent fingerprint detection. In addition, high-temperature sintering results in an increase of the PL intensity owing to the larger particle size and lower levels of impurities in the CPO:Eu2+ phosphors. The latent fingerprint image obtained by using CPO:Eu2+ phosphors reveals a high contrast for various substrate materials, because the phosphors exhibit strong red emission and adhere to the residue of the fingerprint after flowing. On the basis of these results, red-emitting CPO:Eu2+ phosphors can be used for the detection of latent fingerprints in solving criminal cases.

[Effect of sodium and calcium ions on glutamate and glutamine oxidation by rat brain synaptosomes].

PubMed

Nilova, N S

1978-08-01

5 mM oxidative substrates and 0.15 mM Ca(2+) being used, different effects of Ca(2+) on the oxidation are possible, such as an additional inhibition of glutamine oxidation and an additional activation of glutamate oxidation. A decreased Na+-ion concentration in the medium inhibited synaptosomal respiration with glutamate as a substrate. With glutamine as a substrate oxygen consumption does not change.

Development of textured magnesium oxide templates and bicrystals using ion beam assisted deposition

NASA Astrophysics Data System (ADS)

Vallejo, Ronald N.

Recently, there has been an increased research effort in the deposition of near-single-crystal thin films on substrates that do not provide a template for epitaxial crystalline film growth. Ion beam assisted deposition (IBAD) has been demonstrated as one of the most promising methods to artificially control the texture in thin films. Biaxially textured MgO templates of 10 nm thickness were successfully fabricated on glass and silicon substrates without any buffer layers using IBAD. This work has shed insights on several issues. First, surface morphology ˜ 1 nm or better is only a necessary condition for textured IBAD-MgO, but not a sufficient condition. Additional surface preparation must be provided for nucleation and subsequent formation of the textured IBAD-MgO templates. Second, the role of buffer layer on IBAD-MgO texturing. It was found that the ion beam pre-exposure of the substrates prior to IBAD processing provided a sufficient condition for the nucleation and subsequent texture formation of the IBAD grown films. The ion pre-exposure replaced the need for buffer layers in silicon and glass substrates. Finally, by pre-exposing the substrates to Ar + ions, it was found that the ion beam modified the surface and improved the surface roughness of the glass substrates. Textured MgO epi templates were demonstrated for the first time on polymer based substrates (polyimide). This is a crucial step in the realization of epitaxial suspended devices. To achieve an epitaxial film on a sacrificial layer, an epitaxial template film must first be grown prior to subsequent film growth. The role of ion pre-exposure and buffer layer on texture formation was investigated in this part of the work. This thesis also presents groundbreaking results on the fabrication of bicrystal MgO films and bicrystal networks using ion beam assisted deposition. Highly oriented bicrystals, with a common (100) out-of-plane orientation and (110) in-plane orientations having a tilt angle of 45° and 20° have been successfully fabricated. This method has also been used to fabricate two dimensional bicrystal MgO networks in the micrometer scale. The same strategy can be applied to generate nanometer scale bicrystal networks of desired patterns.

Method of forming thermally stable high-resistivity regions in n-type indium phosphide by oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thompson, P.E.; Dietrich, H.B.

1985-12-12

Objects of this invention are: to form high-temperature stable isolation regions in InP; to provide InP wafers that allow greater flexibility in the design and fabrication of discrete devices; to provide new and improved InP semiconductor devices in n-type InP; to provide high-resisitivity isolation regions in InP; to extend the usefulness of damage-induced isolation in n-type InP by making possible processes in which the isolation implantation precedes the alloying of ohmic contacts; and to provide n-type InP substrates without unwanted conductive layers. The above and other object are realized by an InP wafer comprising a S.I. InP substrate; a n-typemore » InP active layer disposed on the substrate; and oxygen ion implanted isolation regions disposed in the active layer. The S.I. InP dopant may comprise either Fe or Cr.« less

Enzymatic dehalogenation of pentachlorophenol by extracts from Arthrobacter sp. strain ATCC 33790.

PubMed Central

Schenk, T; Müller, R; Mörsberger, F; Otto, M K; Lingens, F

1989-01-01

Arthrobacter sp. strain ATCC 33790 was grown with pentachlorophenol (PCP) as the sole source of carbon and energy. Crude extracts, which were prepared by disruption of the bacteria with a French pressure cell, showed no dehalogenating activity with PCP as the substrate. After sucrose density ultracentrifugation of the crude extract at 145,000 x g, various layers were found in the gradient. One yellow layer showed enzymatic conversion of PCP. One chloride ion was released per molecule of PCP. The product of the enzymatic conversion was tetrachlorohydroquinone. NADPH and oxygen were essential for this reaction. EDTA stimulated the enzymatic activity by 67%. The optimum pH for the enzyme activity was 7.5, and the temperature optimum was 25 degrees C. Enzymatic activity was also detected with 2,4,5-trichlorophenol, 2,3,4-trichlorophenol, 2,4,6-trichlorophenol, and 2,3,4,5-tetrachlorophenol as substrates, whereas 3,4,5-trichlorophenol, 2,4-dichlorophenol, 3,4-dichlorophenol, and 4-chlorophenol did not serve as substrates. PMID:2793827

Low- and room-temperature X-ray structures of protein kinase A ternary complexes shed new light on its activity.

PubMed

Kovalevsky, Andrey Y; Johnson, Hanna; Hanson, B Leif; Waltman, Mary Jo; Fisher, S Zoe; Taylor, Susan; Langan, Paul

2012-07-01

Post-translational protein phosphorylation by protein kinase A (PKA) is a ubiquitous signalling mechanism which regulates many cellular processes. A low-temperature X-ray structure of the ternary complex of the PKA catalytic subunit (PKAc) with ATP and a 20-residue peptidic inhibitor (IP20) at the physiological Mg(2+) concentration of ∼0.5 mM (LT PKA-MgATP-IP20) revealed a single metal ion in the active site. The lack of a second metal in LT PKA-MgATP-IP20 renders the β- and γ-phosphoryl groups of ATP very flexible, with high thermal B factors. Thus, the second metal is crucial for tight positioning of the terminal phosphoryl group for transfer to a substrate, as demonstrated by comparison of the former structure with that of the LT PKA-Mg(2)ATP-IP20 complex obtained at high Mg(2+) concentration. In addition to its kinase activity, PKAc is also able to slowly catalyze the hydrolysis of ATP using a water molecule as a substrate. It was found that ATP can be readily and completely hydrolyzed to ADP and a free phosphate ion in the crystals of the ternary complex PKA-Mg(2)ATP-IP20 by X-ray irradiation at room temperature. The cleavage of ATP may be aided by X-ray-generated free hydroxyl radicals, a very reactive chemical species, which move rapidly through the crystal at room temperature. The phosphate anion is clearly visible in the electron-density maps; it remains in the active site but slides about 2 Å from its position in ATP towards Ala21 of IP20, which mimics the phosphorylation site. The phosphate thus pushes the peptidic inhibitor away from the product ADP, while resulting in dramatic conformational changes of the terminal residues 24 and 25 of IP20. X-ray structures of PKAc in complex with the nonhydrolysable ATP analogue AMP-PNP at both room and low temperature demonstrated no temperature effects on the conformation and position of IP20.

Gas flow rate dependence of the discharge characteristics of a helium atmospheric pressure plasma jet interacting with a substrate

NASA Astrophysics Data System (ADS)

Yan, Wen; Economou, Demetre J.

2017-10-01

A 2D (axisymmetric) computational study of the discharge characteristics of an atmospheric pressure plasma jet as a function of gas flow rate was performed. The helium jet emerged from a dielectric tube, with an average gas flow velocity in the range 2.5-20 m s-1 (1 atm, 300 K) in a nitrogen ambient, and impinged on a substrate a short distance dowstream. The effect of the substrate conductivity (conductror versus insulator) was also studied. Whenever possible, simulation predictions were compared with published experimental observations. Discharge ignition and propagation in the dielectric tube were hardly affected by the He gas flow velocity. Most properties of the plasma jet, however, depended sensitively on the He gas flow velocity, which determined the concentration distributions of helium and nitrogen in the mixing layer forming in the gap between the tube exit and the substrate. At low gas flow velocity, the plasma jet evolved from a hollow (donut-shaped) feature to one where the maximum of electron density was on axis. When the gas flow velocity was high, the plasma jet maintained its hollow structure until it struck the substrate. For a conductive substrate, the radial ion fluxes to the surface were relatively uniform over a radius of ~0.4-0.8 mm, and the dominant ion flux was that of He+. For a dielectric substrate, the radial ion fluxes to the surface peaked on the symmetry axis at low He gas flow velocity, but a hollow ion flux distribution was observed at high gas flow velocity. At the same time, the main ion flux switched from N2+ to He2+ as the He gas flow velocity increased from a low to a high value. The diameter of the plasma ‘footprint’ on the substrate first increased with increasing He gas flow velocity, and eventually saturated with further increases in velocity.

Tunneling spectra and superconducting gaps observed by scanning tunneling microscopy near the grain boundaries of FeSe0.3Te0.7 films

NASA Astrophysics Data System (ADS)

Lin, K. C.; Li, Y. S.; Shen, Y. T.; Wu, M. K.; Chi, C. C.

2013-12-01

We used scanning tunneling microscopy (STM) to study the tunneling spectra of FeSe0.3Te0.7 films with two orientations of the ab-planes and a connection ramp between them. We discovered that by pulsed laser deposition (PLD) method, the a- and b-axis of the FeSe0.3Te0.7 film deposited on an Ar-ion-milled magnesium oxide (MgO) substrate were rotated 45° with respect to those of MgO, whereas the a- and b-axis of the film grown on a pristine MgO substrate were parallel to those of MgO. With photolithography and this technique, we can prepare FeSe0.3Te0.7 films with two orientations on the same MgO substrate so that the connection between them forms a ramp at an angle of about 25° to the substrate plane. In the planar region, for either the 0° or 45° orientation, we observed tunneling spectra with a superconducting gap of about 5 meV and 1.78 meV, respectively. However, a much larger gap at about 18 meV was observed in the ramp region. Furthermore, we observed a small zero-bias conductance peak (ZBCP) inside the large gap at T = 4.3 K. The ZBCP becomes smaller with increasing temperature and disappeared at temperature above 7 K.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

NASA Astrophysics Data System (ADS)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.

Formation of nucleoside 5'-polyphosphates from nucleotides and trimetaphosphate

NASA Technical Reports Server (NTRS)

Lohrmann, R.

1975-01-01

Nucleoside 5'-polyphosphates (N5PP) formed when solutions of nucleoside 5'-phosphates (N5P) and trimetaphosphate (TMP) are dessicated at room temperature are studied by paper chromatography, electrophoresis, and metal catalytic reactions. Divalent Mg ion exhibited superior catalytic function to other divalent metal ions in the reaction. Major reaction products are indicated. The importance of the N5PP series, TMP, and N5-triphosphate as substrates of RNA and DNA synthesis, and under postulated prebiotic conditions likely to obtain during prebiological ages of the earth, is emphasized and discussed. Alternate drying and wetting, evaporation from a prebiotic puddle, concentration of solubles in the remaining liquid phase, metal catalysis, and the role of these substances in the formation of amino acids and long-chain polyphosphates are considered.

In vitro activity of minimised hammerhead ribozymes.

PubMed Central

Hendry, P; McCall, M J; Santiago, F S; Jennings, P A

1995-01-01

A number of minimised hammerhead ribozymes (minizymes) which lack stem II have been kinetically characterised. These minizymes display optimal cleavage activity at temperatures around 37 degrees C. The cleavage reactions of the minizymes are first order in hydroxide ion concentration up to around pH 9.3 above which the cleavage rate constants decline rapidly. The reactions show a biphasic dependence on magnesium-ion concentration; one of the interactions has an apparent dissociation constant of around 20 mM while the other appears to be very weak, showing no sign of saturation at 200 mM MgCl2. The minizymes are significantly less active than comparable, full-size ribozymes when cleaving short substrates. However, at a particular site in a transcribed TAT gene from HIV-1, minizymes are more effective than ribozymes. PMID:7479037

Growth of WSi2 in phosphorous-implanted W/«Si» couples

NASA Astrophysics Data System (ADS)

Ma, E.; Lim, B. S.; Nicolet, M.-A.; Alvi, N. S.; Hamdi, A. H.

1988-05-01

The thermal reaction of rf-sputter-deposited tungsten films with a (100) silicon substrate is investigated by vacuum furnace annealing and rapid thermal annealing. An irradiation of the W/Si interface by a phosphorous ion beam at room temperature prior to annealing promotes a uniform interfacial growth of WSi2. The growth of WSi2 follows diffusion-controlled kinetics during both furnace annealing and rapid thermal processing. A growth law of x2 = kt is obtained for furnace annealing between 690 and 740° C, where x is the thickness of the compound, t is the annealing duration after an initial incubation period and k = 62 (cm2/s) exp (--3.0 eV/kT). The surface smoothness of the suicide films improves with increasing ion dose.

Precise impurity analysis of Cu films by GDMS: relation between negative substrate bias voltage and impurity ionization potentials

NASA Astrophysics Data System (ADS)

Lim, J. W.; Mimura, K.; Isshiki, M.

2005-02-01

Cu films were deposited on Si(100) substrates by applying a negative substrate bias voltage using the non-mass-separated ion beam deposition method. Glow-discharge mass spectrometry was used to determine the impurity concentrations of the deposited Cu films and the 6N Cu target. It was found that the Cu film deposited at the substrate bias voltage of -50 V showed lower impurity contents than the Cu film deposited without the substrate bias voltage, although both the Cu films were contaminated during the deposition. The purification effect might result from the following reasons: (i) the Penning ionization and an ionization mechanism proposed in the present study, (ii) a difference in the kinetic energy of accelerated Cu+ ions toward the substrate with/without the negative substrate bias voltage.

Modeling secondary electron emission from nanostructured materials in helium ion microscope

NASA Astrophysics Data System (ADS)

Ohya, K.; Yamanaka, T.

2013-11-01

Charging of a SiO2 layer on a Si substrate during helium (He) beam irradiation is investigated at an energy range relevant to a He ion microscope (HIM). A self-consistent calculation is performed to model the transport of the ions and secondary electrons (SEs), the charge accumulation in the layer, and the electric field below and above the surface. The calculated results are compared with those for gallium (Ga) ions at the same energy and 1 keV electrons corresponding to a low-voltage scanning electron microscope (SEM). The charging of thin layers (<250 nm) is strongly suppressed due to wide depth and lateral distributions of the He ions in the layer, the voltage of which is much lower than that for the Ga ions and the electrons, where the distributions are much more localized. When the irradiation approaches the edge of a 100-nm-high SiO2 step formed on a Si substrate, a sharp increase in the number of SEs is observed, irrespective of whether a material is charged or not. When the He ions are incident on the bottom of the step, the re-entrance of SEs emitted from the substrate into the sidewall is clearly observed, but it causes the sidewall to be charged negatively. At the positions on the SiO2 layer away from the step edge, the charging voltage becomes positive with increasing number of Ga ions and electrons. However, He ions do not induce such a voltage due to strong relaxation of positive and negative charges in the Si substrate and their recombination in the SiO2 layer.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

NASA Astrophysics Data System (ADS)

Chopade, S. S.; Barve, S. A.; Thulasi Raman, K. H.; Chand, N.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Lodha, G. S.; Rao, G. M.; Patil, D. S.

2013-11-01

Yttrium oxide (Y2O3) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 °C. The films have been deposited under influence of varying RF self-bias (-50 V to -175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2O3 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y2O3. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y2O3 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y2O3 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness.

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

NASA Astrophysics Data System (ADS)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

Microstructural response of InGaN to swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.; Ai, W. S.; Peng, J. X.; Wang, T. S.; Zhang, C. H.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ∼275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV 238U32+ ions to a fluence of 1.2 × 1012 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

Ion-specific effects under confinement: the role of interfacial water.

PubMed

Argyris, Dimitrios; Cole, David R; Striolo, Alberto

2010-04-27

All-atom molecular dynamics simulations were employed for the study of the structure and dynamics of aqueous electrolyte solutions within slit-shaped silica nanopores with a width of 10.67 A at ambient temperature. All simulations were conducted for 250 ns to capture the dynamics of ion adsorption and to obtain the equilibrium distribution of multiple ionic species (Na+, Cs+, and Cl(-)) within the pores. The results clearly support the existence of ion-specific effects under confinement, which can be explained by the properties of interfacial water. Cl(-) strongly adsorbs onto the silica surface. Although neither Na+ nor Cs+ is in contact with the solid surface, they show ion-specific behavior. The differences between the density distributions of cations within the pore are primarily due to size effects through their interaction with confined water molecules. The majority of Na+ ions appear within one water layer in close proximity to the silica surface, whereas Cs+ is excluded from well-defined water layers. As a consequence of this preferential distribution, we observe enhanced in-plane mobility for Cs+ ions, found near the center of the pore, compared to that for Na+ ions, closer to the solid substrate. These observations illustrate the key role of interfacial water in determining ion-specific effects under confinement and have practical importance in several fields, from geology to biology.

Purification and characterization of chymotrypsin from viscera of vermiculated sailfin catfish, Pterygoplichthys disjunctivus, Weber, 1991.

PubMed

Villalba-Villalba, Ana Gloria; Ramírez-Suárez, Juan Carlos; Pacheco-Aguilar, Ramón; Valenzuela-Soto, Elisa Miriam; Lugo-Sánchez, María Elena; Figueroa-Soto, Ciria Guadalupe

2013-04-01

Pterygoplichthys disjunctivus viscera chymotrypsin was purified by fractionation with ammonium sulfate (30-70 % saturation), gel filtration, affinity, and ion exchange chromatography. Chymotrypsin molecular weight was approximately 29 kDa according to sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE), shown a single band in zymogram. Electrofocusing study suggested being an anionic enzyme (pI ≈ 3.9), exhibiting maximal activity at pH 9 and 50 °C, using Suc-Ala-Ala-Pro-Phe-p-nitroanilide (SAAPNA) as substrate. Enzyme was effectively inhibited by phenyl methyl sulfonyl fluoride (PMSF) (99 %), and N-tosyl-L-phenylalanine chloromethyl ketone (TPCK) (94 %). Enzyme activity was affected by the following ions in decreasing order: Hg(2+), Fe(2+), Cu(2+), Li(1+), Mg(2+), K(1+), Mn(2+), while Ca(2+) had no effect. Chymotrypsin activity decreased continuously as NaCl concentration increased (from 0 to 30 %). K m and V max values were 0.72 ± 1.4 mM and 1.15 ± 0.06 μmol/min/mg of protein, respectively (SAAPNA as substrate). Results suggest the enzyme has a potential application where low processing temperatures are needed, such as in fish sauce production.

Synthesis and characterization of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} thin film grown on LaAlO{sub 3} substrate by pulsed laser deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Irshad, E-mail: bhat.amu85@gmail.com; Husain, Shahid; Patil, S. I.

2015-06-24

We report the structural, morphological and magneto-transport properties of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} (LTMO) thin film grown on (001) LaAlO{sub 3} single crystal substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) results confirm that the film has good crystalline quality, single phase, and c-axis orientation. The atomic force microscopy (AFM) results have revealed that the film consists of grains with the average size in a range of 20–30 nm and root-mean square (rms) roughness of 0.27nm. The resistivity versus temperature measurement exhibits an insulator to metal transition (MIT). We have noticed a huge value of magnetoresistance (∼93%)more » close to MIT in presence of 8T field. X-ray photoemission spectroscopy confirms the electron doping and suggests that Te ions could be in the Te{sup 4+} state, while the Mn ions stay in the Mn{sup 2+} and Mn{sup 3+} valence state.« less

Growth of SiO 2 on InP substrate by liquid phase deposition

NASA Astrophysics Data System (ADS)

Lei, Po Hsun; Yang, Chyi Da

2010-04-01

We have grown silicon dioxide (SiO 2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO 2 saturated hydrofluorosilicic acid (H 2SiF 6), 0.1 M boric acid (H 3BO 3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO 2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO 2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H 2O 2) that can regulate the concentration of OH - ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO 2 saturated H 2SiF 6 in treatment solution.

Purification and Characterization of a Cyclomaltodextrin Glucanotransferase From Paenibacillus campinasensis Strain H69-3

NASA Astrophysics Data System (ADS)

Alves-Prado, Heloiza Ferreira; Gomes, Eleni; da Silva, Roberto

A cyclomaltodextrin glucanotransferase (E.C. 2.4.1.19) from a newly isolated alkalophilic and moderately thermophilic Paenibacillus campinasensis strain H69-3 was purified as a homogeneous protein from culture supernatant. Cyclomaltodextrin glucanotransferase was produced during submerged fermentation at 45°C and purified by gel filtration on Sephadex G50 ion exchange using a Q-Sepharose column and ion exchange using a Mono-Q column. The molecular weight of the purified enzyme was 70 kDa by sodium dodecyl sulfate-polyacrylamide gel electrophoresis and the pI was 5.3. The optimum pH for enzyme activity was 6.5, and it was stable in the pH range 6.0-11.5. The optimum temperature was 65°C at pH 6.5, and it was thermally stable up to 60°C without substrate during 1 h in the presence of 10 mM CaCl2 The enzyme activity increased in the presence of Co2+, Ba2+, and Mn2+. Using maltodextrin as substrate, the K m and K cat were 1.65 mg/mL and 347.9 μmol/mg-min, respectively.

Interactions of chlorphenesin and divalent metal ions with phosphodiesterase.

PubMed

Edelson, J; McMullen, J P

1976-09-01

Chlorphenesin inhibition of the hydrolysis of cyclic AMP by guinea-pig lung phosphodiesterase was reversed by the addition of exogenous magnesium ions. Chlorphenesin and theophylline inhibition of this enzyme was shown to be noncompetitive when the substrate concentration was low. Kinetic studies of the inhibition of beef heart phosphodiesterase by chlorphenesin and theophylline indicated that the substrate concentration was a factor in determining whether inhibition was competitive or noncompetitive. Calcium, cobalt and copper ions were inhibitory to guinea-pig lung phosphodiesterase. The inhibition due to chlorphenesin was partially reversed by low (40 mM or less) concentrations of barium ions; high concentrations of barium ions, or manganese ions, were inhibitory. The concentration of the divalent cation did not affect the type of inhibition that was observed.

Dual ion beam assisted deposition of biaxially textured template layers

DOEpatents

Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

2005-05-31

The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

Cobalt Oxide Porous Nanofibers Directly Grown on Conductive Substrate as a Binder/Additive-Free Lithium-Ion Battery Anode with High Capacity.

PubMed

Liu, Hao; Zheng, Zheng; Chen, Bochao; Liao, Libing; Wang, Xina

2017-12-01

In order to reduce the amount of inactive materials, such as binders and carbon additives in battery electrode, porous cobalt monoxide nanofibers were directly grown on conductive substrate as a binder/additive-free lithium-ion battery anode. This electrode exhibited very high specific discharging/charging capacities at various rates and good cycling stability. It was promising as high capacity anode materials for lithium-ion battery.

Extracellular Alkaline Lipase from a Novel Fungus
Curvularia sp. DHE 5: Optimisation of Physicochemical Parameters, Partial Purification and Characterisation

PubMed Central

2017-01-01

Summary Thirty isolated fungal strains were screened for lipase production using Phenol Red plates, containing tributyrin as lipidic substrate, and a novel fungus identified genetically as Curvularia sp. DHE 5 was found as the most prominent strain. Various agro-industrial substrates were evaluated as inert supports for lipase production in solid-state fermentation. The highest yield of lipase ((83.4±2.2) U/g on dry mass basis) was reported with wheat bran medium after seven days of fermentation at pH=7.0, temperature of 30 °C, 70% moisture content, inoculum size of 1.27·107 spore/mL and 2% olive oil as an inducer. Supplementation of the medium with 0.05% KCl as an ion source further increased lipase production to (88.9±1.2) U/g on dry mass basis. The enzyme was partially purified through ammonium sulphate fractionation (40%) followed by dialysis, and its optimum pH and temperature were reported at 8.0 and 50 °C, respectively, with remarkable pH and thermal stability. PMID:28867950

Dynamics of tungsten hexacarbonyl, dicobalt octacarbonyl, and their fragments adsorbed on silica surfaces.

PubMed

Muthukumar, Kaliappan; Valentí, Roser; Jeschke, Harald O

2014-05-14

Tungsten and cobalt carbonyls adsorbed on a substrate are typical starting points for the electron beam induced deposition of tungsten or cobalt based metallic nanostructures. We employ first principles molecular dynamics simulations to investigate the dynamics and vibrational spectra of W(CO)6 and W(CO)5 as well as Co2(CO)8 and Co(CO)4 precursor molecules on fully and partially hydroxylated silica surfaces. Such surfaces resemble the initial conditions of electron beam induced growth processes. We find that both W(CO)6 and Co2(CO)8 are stable at room temperature and mobile on a silica surface saturated with hydroxyl groups (OH), moving up to half an Angström per picosecond. In contrast, chemisorbed W(CO)5 or Co(CO)4 ions at room temperature do not change their binding site. These results contribute to gaining fundamental insight into how the molecules behave in the simulated time window of 20 ps and our determined vibrational spectra of all species provide signatures for experimentally distinguishing the form in which precursors cover a substrate.

Effect of Growth Parameters on SnO2 Nanowires Growth by Electron Beam Evaporation Method

NASA Astrophysics Data System (ADS)

Rakesh Kumar, R.; Manjula, Y.; Narasimha Rao, K.

2018-02-01

Tin oxide (SnO2) nanowires were synthesized via catalyst assisted VLS growth mechanism by the electron beam evaporation method at a growth temperature of 450 °C. The effects of growth parameters such as evaporation rate of Tin, catalyst film thickness, and different types of substrates on the growth of SnO2 nanowires were studied. Nanowires (NWs) growth was completely seized at higher tin evaporation rates due to the inability of the catalyst particle to initiate the NWs growth. Nanowires diameters were able to tune with catalyst film thickness. Nanowires growth was completely absent at higher catalyst film thickness due to agglomeration of the catalyst film. Optimum growth parameters for SnO2 NWs were presented. Nanocomposites such as Zinc oxide - SnO2, Graphene oxide sheets- SnO2 and Graphene nanosheets-SnO2 were able to synthesize at a lower substrate temperature of 450 °C. These nanocompsoites will be useful in enhancing the capacity of Li-ion batteries, the gas sensing response and also useful in increasing the photo catalytic activity.

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

NASA Astrophysics Data System (ADS)

Son, Ji-Su; Hyeon Baik, Kwang; Gon Seo, Yong; Song, Hooyoung; Hoon Kim, Ji; Hwang, Sung-Min; Kim, Tae-Geun

2011-07-01

The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×10 19 cm -3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O 2) and nitrogen (N 2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.

Oligomerization of Negatively-Charged Amino Acids by Carbonyldiimidazole

NASA Technical Reports Server (NTRS)

Hill, Aubrey R., Jr.; Orgel, Leslie E.

1996-01-01

The carbonyldiimidazole-induced oligomerizations of aspartic acid, glutamic acid and 0-phospho-serine are amongst the most efficient reported syntheses of biopolymers in aqueous solution. The dependence of the yields of products on the concentrations of reagents, the temperature and the enantiomeric composition of the substrate amino acids are reported. Catalysis by metal ions, particularly by Mg(2+), is described. These reactions do not generate significant amounts of material in the size-range of several tens of residues that are thought to be needed for a polymer to function as a genetic material.

Selective formation of porous silicon

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Inhibition of ferric ion to oxalate oxidase shed light on the substrate binding site.

PubMed

Pang, Yu; Lan, Wanjun; Huang, Xuelei; Zuo, Guanke; Liu, Hui; Zhang, Jingyan

2015-10-01

Oxalate oxidase (OxOx), a well known enzyme catalyzes the cleavage of oxalate to carbon dioxide with reduction of dioxygen to hydrogen peroxide, however its catalytic process is not well understood. To define the substrate binding site, interaction of Fe(3+) ions with OxOx was systemically investigated using biochemical method, circular dichrosim spectroscopy, microscale thermophoresis, and computer modeling. We demonstrated that Fe(3+) is a non-competitive inhibitor with a milder binding affinity to OxOx, and the secondary structure of the OxOx was slightly altered upon its binding. On the basis of the structural properties of the OxOx and its interaction with Fe(3+) ions, two residue clusters of OxOx were assigned as potential Fe(3+) binding sites, the mechanism of the inhibition of Fe(3+) was delineated. Importantly, the residues that interact with Fe(3+) ions are involved in the substrate orienting based on computer docking. Consequently, the interaction of OxOx with Fe(3+) highlights insight into substrate binding site in OxOx.

Unbiased Simulations Reveal the Inward-Facing Conformation of the Human Serotonin Transporter and Na+ Ion Release

PubMed Central

Koldsø, Heidi; Noer, Pernille; Grouleff, Julie; Autzen, Henriette Elisabeth; Sinning, Steffen; Schiøtt, Birgit

2011-01-01

Monoamine transporters are responsible for termination of synaptic signaling and are involved in depression, control of appetite, and anxiety amongst other neurological processes. Despite extensive efforts, the structures of the monoamine transporters and the transport mechanism of ions and substrates are still largely unknown. Structural knowledge of the human serotonin transporter (hSERT) is much awaited for understanding the mechanistic details of substrate translocation and binding of antidepressants and drugs of abuse. The publication of the crystal structure of the homologous leucine transporter has resulted in homology models of the monoamine transporters. Here we present extended molecular dynamics simulations of an experimentally supported homology model of hSERT with and without the natural substrate yielding a total of more than 1.5 µs of simulation of the protein dimer. The simulations reveal a transition of hSERT from an outward-facing occluded conformation to an inward-facing conformation in a one-substrate-bound state. Simulations with a second substrate in the proposed symport effector site did not lead to conformational changes associated with translocation. The central substrate binding site becomes fully exposed to the cytoplasm leaving both the Na+-ion in the Na2-site and the substrate in direct contact with the cytoplasm through water interactions. The simulations reveal how sodium is released and show indications of early events of substrate transport. The notion that ion dissociation from the Na2-site drives translocation is supported by experimental studies of a Na2-site mutant. Transmembrane helices (TMs) 1 and 6 are identified as the helices involved in the largest movements during transport. PMID:22046120

Physical processes in directed ion beam sputtering. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Robinson, R. S.

1979-01-01

The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

Tunable transport property of oxygen ion in metal oxide thin film: Impact of electrolyte orientation on conductivity.

PubMed

Arunkumar, P; Ramaseshan, R; Dash, S; Babu, K Suresh

2017-06-14

Quest for efficient ion conducting electrolyte thin film operating at intermediate temperature (~600 °C) holds promise for the real-world utilization of solid oxide fuel cells. Here, we report the correlation between mixed as well as preferentially oriented samarium doped cerium oxide electrolyte films fabricated by varying the substrate temperatures (100, 300 and 500 °C) over anode/ quartz by electron beam physical vapor deposition. Pole figure analysis of films deposited at 300 °C demonstrated a preferential (111) orientation in out-off plane direction, while a mixed orientation was observed at 100 and 500 °C. As per extended structural zone model, the growth mechanism of film differs with surface mobility of adatom. Preferential orientation resulted in higher ionic conductivity than the films with mixed orientation, demonstrating the role of growth on electrochemical properties. The superior ionic conductivity upon preferential orientation arises from the effective reduction of anisotropic nature and grain boundary density in highly oriented thin films in out-of-plane direction, which facilitates the hopping of oxygen ion at a lower activation energy. This unique feature of growing an oriented electrolyte over the anode material opens a new approach to solving the grain boundary limitation and makes it as a promising solution for efficient power generation.

Low-energy ion irradiation in HiPIMS to enable anatase TiO2 selective growth

NASA Astrophysics Data System (ADS)

Cemin, Felipe; Tsukamoto, Makoto; Keraudy, Julien; Antunes, Vinícius Gabriel; Helmersson, Ulf; Alvarez, Fernando; Minea, Tiberiu; Lundin, Daniel

2018-06-01

High power impulse magnetron sputtering (HiPIMS) has already demonstrated great potential for synthesizing the high-energy crystalline phase of titanium dioxide (rutile TiO2) due to large quantities of highly energetic ions present in the discharge. In this work, it is shown that the metastable anatase phase can also be obtained by HiPIMS. The required deposition conditions have been identified by systematically studying the phase formation, microstructure and chemical composition as a function of mode of target operation as well as of substrate temperature, working pressure, and peak current density. It is found that films deposited in the metal and transition modes are predominantly amorphous and contain substoichiometric TiO x compounds, while in compound mode they are well-crystallized and present only O2‑ ions bound to Ti4+, i.e. pure TiO2. Anatase TiO2 films are obtained for working pressures between 1 and 2 Pa, a peak current density of ~1 A cm‑2 and deposition temperatures lower than 300 °C. Rutile is favored at lower pressures (<1 Pa) and higher peak current densities (>2 A cm‑2), while amorphous films are obtained at higher pressures (5 Pa). Microstructural characterization of selected films is also presented.

The analysis of ion-selective field-effect transistor operation in chemical sensors

NASA Astrophysics Data System (ADS)

Hotra, Zenon; Holyaka, Roman; Hladun, Michael; Humenuk, Iryna

2003-09-01

In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.

Influence of temperature, pH and metal ions on guaiacol oxidation of purified laccase from Leptographium qinlingensis.

PubMed

Hu, Xia; Wang, Chunyan; Wang, Le; Zhang, Ranran; Chen, Hui

2014-04-01

The bark beetle Dendroctonus armandi is able to kill living Pinus armandi and has caused serious damage to pine forest in Northern China. As the most important symbiotic fungus of D. armandi, Leptographium qinlingensis plays an important role in the invasion process of the bark beetle. The laccase secreted by it are involved in lignin degradation to provide utilizable nutrition for D. armandi, and catalyze some biochemical reactions, causing the damages of tree tissue. In present study, the extracellular laccase of L. qinlingensis was purified by using the ammonium sulfate precipitation and DEAE-cellulose (DE-52) column chromatography. Furthermore, the effects of temperature, pH value and metal ions on it were investigated and characterized. The purified enzyme exerted its optimal activity with guaiacol. The catalytic efficiencies K(m) and V(max) determined for substrate guaiacol were 15.4 μM and 372.9 IU mg⁻¹, respectively. The optimum pH and temperature for the purified enzyme was 4.4 and 45 °C, respectively, with the highest enzyme specific activity of 7,000 IU mg⁻¹. Moreover, the metal ions, Co²⁺, Mn²⁺, Ca²⁺, Mg²⁺, Fe²⁺ and Cd²⁺, especially Hg²⁺, showed significantly inhibition effects on its activity. To understand the characteristics of this laccase might provide an opportunity and theoretical basis to promote integrated pest management of D. armandi.

Epitaxial pentacene films grown on the surface of ion-beam-processed gate dielectric layer

NASA Astrophysics Data System (ADS)

Chou, W. Y.; Kuo, C. W.; Cheng, H. L.; Mai, Y. S.; Tang, F. C.; Lin, S. T.; Yeh, C. Y.; Horng, J. B.; Chia, C. T.; Liao, C. C.; Shu, D. Y.

2006-06-01

The following research describes the process of fabrication of pentacene films with submicron thickness, deposited by thermal evaporation in high vacuum. The films were fabricated with the aforementioned conditions and their characteristics were analyzed using x-ray diffraction, scanning electron microscopy, polarized Raman spectroscopy, and photoluminescence. Organic thin-film transistors (OTFTs) were fabricated on an indium tin oxide coated glass substrate, using an active layer of ordered pentacene molecules, which were grown at room temperature. Pentacene film was aligned using the ion-beam aligned method, which is typically employed to align liquid crystals. Electrical measurements taken on a thin-film transistor indicated an increase in the saturation current by a factor of 15. Pentacene-based OTFTs with argon ion-beam-processed gate dielectric layers of silicon dioxide, in which the direction of the ion beam was perpendicular to the current flow, exhibited a mobility that was up to an order of magnitude greater than that of the controlled device without ion-beam process; current on/off ratios of approximately 106 were obtained. Polarized Raman spectroscopy investigation indicated that the surface of the gate dielectric layer, treated with argon ion beam, enhanced the intermolecular coupling of pentacene molecules. The study also proposes the explanation for the mechanism of carrier transportation in pentacene films.

N +-implantation induced enhanced adhesion in WC1-x/Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Laidani, Nadhira; Dorigoni, Carla; Miotello, Antonio

1996-12-01

In this work, the potentiality of the N +-implantation to promote adhesion in WC1-x/Ti-6Al-4V bilayers has been investigated. The WC 1- x films were deposited by rf sputtering in Ar discharge. N +-implantations were performed at 160 keV with ion dose ranging from 5 × 10 15 to 2 × 10 17N +/cm 2. The implantations have been carried out at two sample temperatures: 363 K and 423 K. Adhesion strength was measured by means of the scratch test in conjunction with scanning electron microscopy and energy dispersive spectrometry (EDS). Auger electron spectroscopy (AES), Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) analyses were used to study the chemical, compositional and structural changes of the WC1-x/Ti-6Al-4V interface. As a general result, N +-implantation modifies the adhesion failure mechanism which from adhesive, before implantation, becomes cohesive. The implantation temperature had a strong effect on the critical loads Lc. N +-implantation at 423 K resulted in a slight increase of Lc, from 2N (unimplanted systems) to 5N for all ion doses. This weak improvement of the adhesion strength was associated with the particular interface processes which allowed C, but not W, mixing into the substrate. In this case, TiC bondings formed which contributed to the substrate embrittlement. When the implantations were carried out at 363 K, both C and W underwent mixing with Ti-6Al-4V: this favoured not only an interface composition grading but also a graded chemistry across the interface, with a strong increase of Lc for low ion dose ( Lc = 14N for 1 × 10 16 N +/cm 2). Implantation with higher doses (5 × 10 16N -/cm 2 and 2 × 10 17N +/cm 2) exhibited lower efficiency ( Lc = 7N for 2 × 10 17 N +/cm 2). This ion dose dependence of the adhesion strength was attributed to the formation of different phases across the interface, probably structurally incompatible.

Penetration of alkali atoms throughout a graphene membrane: theoretical modeling

NASA Astrophysics Data System (ADS)

Boukhvalov, D. W.; Virojanadara, C.

2012-02-01

Theoretical studies of penetration of various alkali atoms (Li, Na, Rb, Cs) throughout a graphene membrane grown on a silicon carbide substrate are reported and compared with recent experimental results. Results of first principles modeling demonstrate a rather low (about 0.8 eV) energy barrier for the formation of temporary defects in the carbon layer required for the penetration of Li at a high concentration of adatoms, a higher (about 2 eV) barrier for Na, and barriers above 4 eV for Rb and Cs. Experiments prove migration of lithium adatoms from the graphene surface to the buffer layer and SiC substrate at room temperature, sodium at 100 °C and impenetrability of the graphene membrane for Rb and Cs. Differences between epitaxial and free-standing graphene for the penetration of alkali ions are also discussed.

Penetration of alkali atoms throughout a graphene membrane: theoretical modeling.

PubMed

Boukhvalov, D W; Virojanadara, C

2012-03-07

Theoretical studies of penetration of various alkali atoms (Li, Na, Rb, Cs) throughout a graphene membrane grown on a silicon carbide substrate are reported and compared with recent experimental results. Results of first principles modeling demonstrate a rather low (about 0.8 eV) energy barrier for the formation of temporary defects in the carbon layer required for the penetration of Li at a high concentration of adatoms, a higher (about 2 eV) barrier for Na, and barriers above 4 eV for Rb and Cs. Experiments prove migration of lithium adatoms from the graphene surface to the buffer layer and SiC substrate at room temperature, sodium at 100 °C and impenetrability of the graphene membrane for Rb and Cs. Differences between epitaxial and free-standing graphene for the penetration of alkali ions are also discussed.

Biparametric potentiometric analytical microsystem for nitrate and potassium monitoring in water recycling processes for manned space missions.

PubMed

Calvo-López, Antonio; Arasa-Puig, Eva; Puyol, Mar; Casalta, Joan Manel; Alonso-Chamarro, Julián

2013-12-04

The construction and evaluation of a Low Temperature Co-fired Ceramics (LTCC)-based continuous flow potentiometric microanalyzer prototype to simultaneously monitor the presence of two ions (potassium and nitrate) in samples from the water recycling process for future manned space missions is presented. The microsystem integrates microfluidics and the detection system in a single substrate and it is smaller than a credit card. The detection system is based on two ion-selective electrodes (ISEs), which are built using all-solid state nitrate and potassium polymeric membranes, and a screen-printed Ag/AgCl reference electrode. The obtained analytical features after the optimization of the microfluidic design and hydrodynamics are a linear range from 10 to 1000 mg L(-1) and from 1.9 to 155 mg L(-1) and a detection limit of 9.56 mg L(-1) and 0.81 mg L(-1) for nitrate and potassium ions respectively. Copyright © 2013 Elsevier B.V. All rights reserved.

Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe+ ions

NASA Astrophysics Data System (ADS)

Vo, V. T.; Koon, K. L.; Hu, Z. R.; Dharmasiri, C. N.; Subramaniam, S. C.; Rezazadeh, A. A.

2004-04-01

Electrical isolation in multilayer GaAs planar doped barrier (PDB) diode structures produced by H+ and Fe+ ion implantation were investigated. For an H+ bombardment with a dose of 1×1015cm-2, a sheet resistivity as high as 3×108 Ω/sq and thermal stability up to 400 °C has been achieved. For samples bombarded by Fe+ ions, a similar high sheet resistivity has also been achieved although a longer annealing time (15 min) and a higher annealing temperature (550 °C) were needed. The rf dissipation losses of coplanar waveguide (CPW) "thru" lines fabricated on bombarded multilayer PDBD structure samples were also examined. The measured rf losses were 1.65 dB/cm at 10 GHz and 3 dB/cm at 40 GHz, similar to the values that a CPW line exhibits on a semi-isolating GaAs substrate.

Approaches in controllable generation of artificial pinning center in REBa2Cu3O y -coated conductor for high-flux pinning

NASA Astrophysics Data System (ADS)

Yoshida, Y.; Miura, S.; Tsuchiya, Y.; Ichino, Y.; Awaji, S.; Matsumoto, K.; Ichinose, A.

2017-10-01

This paper reviews the progress of studies to determine optimum shapes of the artificial pinning center (APC) of REBa2Cu3O y thin films and coated conductors towards superconducting magnets operating at temperatures of 77 K or less. Superconducting properties vary depending on the kind and quantity of BaMO3 materials. Therefore, we study changes in the shapes of nanorods that are due to the difference in the quality of additives and growth temperature. In addition, we aim to control the APC using an optimum shape that matches the operating temperature. In particular, we describe the shape control of nanorods in SmBCO thin films and coated conductors by employing lower temperature growth (LTG) technology using seed layers. From the cross-sectional transmission electron microscopy observations, we confirmed that using the LTG method, the BaHfO3 (BHO) nanorods, which were comparatively thin and short in length, formed a firework structure in the case of SmBCO films with coated conductors. The superconducting properties in the magnetic field of the SmBCO-coated conductor with the optimum amount of BHO showed that {F}{{p}}\\max = 1.6 TN m-3 on a single crystalline substrate and 1.5 TN m-3 on metallic substrate with a biaxially textured MgO layer fabricated by ion-beam assisted deposition method tape 4.2 K.

Malic enzyme: Tritium isotope effects with alternative dinucleotide substrates and divalent metal ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karsten, W.E.; Harris, B.G.; Cook, P.F.

1992-01-01

The NAD-malic enzyme from Ascaris suum catalyzes the divalent metal ion dependent oxidative decarboxylation of L-malate to yield pyruvate, carbon dioxide and NADH. Multiple isotope effect studies suggest a stepwise chemical mechanism with hydride transfer from L-malate to NAD occurring first to form oxalacetate, followed by decarboxylation. Utilizing L-malate-2-T, tritium V/K isotope effects have been determined for the hydride transfer step using a variety of alternative dinucleotide substrates and divalent metal ions. Combination of these data with deuterium isotope effects data and previously determined [sup 13]C isotope effects has allowed the calculation of intrinsic isotope effects for the malic enzymemore » catalyzed reaction. The identity of both the dinucleotide substrate and divalent metal ion has an effect of the size of the intrinsic isotope effect for hydride transfer.« less

Enhanced Light Extraction from OLEDs Fabricated on Patterned Plastic Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hippola, Chamika; Kaudal, Rajiv; Manna, Eeshita

A key scientific and technological challenge in organic light-emitting diodes (OLEDs) is enhancing the light outcoupling factor η out, which is typically <20%. This paper reports experimental and modeling results of a promising approach to strongly increase η out by fabricating OLEDs on novel flexible nanopatterned substrates that result in a >2× enhancement in green phosphorescent OLEDs (PhOLEDs) fabricated on corrugated polycarbonate (PC). The external quantum efficiency (EQE) reaches 50% (meaning ηout ≥50%); it increases 2.6x relative to a glass/ITO device and 2× relative to devices on glass/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) or flat PC/PEDOT:PSS. A significant enhancement is also observed formore » blue PhOLEDs with EQE 1.7× relative to flat PC. The corrugated PC substrates are fabricated efficiently and cost-effectively by direct room-temperature molding. These substrates successfully reduce photon losses due to trapping/waveguiding in the organic+anode layers and possibly substrate, and losses to plasmons at the metal cathode. Focused ion beam gauged the conformality of the OLEDs. Dome-shaped convex nanopatterns with height of ~280–400 nm and pitch ~750–800 nm were found to be optimal. Lastly, substrate design and layer thickness simulations, reported first for patterned devices, agree with the experimental results that present a promising method to mitigate photon loss paths in OLEDs.« less

Enhanced Light Extraction from OLEDs Fabricated on Patterned Plastic Substrates

DOE PAGES

Hippola, Chamika; Kaudal, Rajiv; Manna, Eeshita; ...

2018-02-19

A key scientific and technological challenge in organic light-emitting diodes (OLEDs) is enhancing the light outcoupling factor η out, which is typically <20%. This paper reports experimental and modeling results of a promising approach to strongly increase η out by fabricating OLEDs on novel flexible nanopatterned substrates that result in a >2× enhancement in green phosphorescent OLEDs (PhOLEDs) fabricated on corrugated polycarbonate (PC). The external quantum efficiency (EQE) reaches 50% (meaning ηout ≥50%); it increases 2.6x relative to a glass/ITO device and 2× relative to devices on glass/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) or flat PC/PEDOT:PSS. A significant enhancement is also observed formore » blue PhOLEDs with EQE 1.7× relative to flat PC. The corrugated PC substrates are fabricated efficiently and cost-effectively by direct room-temperature molding. These substrates successfully reduce photon losses due to trapping/waveguiding in the organic+anode layers and possibly substrate, and losses to plasmons at the metal cathode. Focused ion beam gauged the conformality of the OLEDs. Dome-shaped convex nanopatterns with height of ~280–400 nm and pitch ~750–800 nm were found to be optimal. Lastly, substrate design and layer thickness simulations, reported first for patterned devices, agree with the experimental results that present a promising method to mitigate photon loss paths in OLEDs.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ast, D.G.

Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The researchmore » program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.« less

Versatile, high-sensitivity faraday cup array for ion implanters

DOEpatents

Musket, Ronald G.; Patterson, Robert G.

2003-01-01

An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 10.sup.11 -10.sup.18 ions/cm.sup.2 to be extended to below 10.sup.6 ions/cm.sup.2. The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm.sup.2 and >750 cm.sup.2, and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.

Silica coatings formed on noble dental casting alloy by the sol-gel dipping process.

PubMed

Yoshida, K; Tanagawa, M; Kamada, K; Hatada, R; Baba, K; Inoi, T; Atsuta, M

1999-08-01

The sol-gel dipping process, in which liquid silicon alkoxide is transformed into the solid silicon-oxygen network, can produce a thin film coating of silica (SiO2). The features of this method are high homogeneity and purity of the thin SiO2 film and a low sinter temperature, which are important in preparation of coating films that can protect from metallic ion release from the metal substrate and prevent attachment of dental plaque. We evaluated the surface characteristics of the dental casting silver-palladium-copper-gold (Ag-Pd-Cu-Au) alloy coated with a thin SiO2 film by the sol-gel dipping process. The SiO2 film bonded strongly (over 40 MPa) to Ti-implanted Ag-Pd-Cu-Au alloy substrate as demonstrated by a pull test. Hydrophobilization of Ti-implanted/SiO2-coated surfaces resulted in a significant increase of the contact angle of water (80.5 degrees) compared with that of the noncoated alloy specimens (59.3 degrees). Ti-implanted/SiO2-coated specimens showed the release of many fewer metallic ions (192 ppb/cm2) from the substrate than did noncoated specimens (2,089 ppb/cm2). The formation of a thin SiO2 film by the sol-gel dipping process on the surface of Ti-implanted Ag-Pd-Cu-Au alloy after casting clinically may be useful for minimizing the possibilities of the accumulation of dental plaque and metal allergies caused by intraoral metal restorations.

Characterization of biotechnologically relevant extracellular lipase produced by Aspergillus terreus NCFT 4269.10

PubMed Central

Sethi, Bijay Kumar; Nanda, Prativa Kumari; Sahoo, Santilata

2016-01-01

Enzyme production by Aspergillus terreus NCFT 4269.10 was studied under liquid static surface and solid-state fermentation using mustard oil cake as a substrate. The maximum lipase biosynthesis was observed after incubation at 30 °C for 96 h. Among the domestic oils tested, the maximum lipase biosynthesis was achieved using palm oil. The crude lipase was purified 2.56-fold to electrophoretic homogeneity, with a yield of 8.44%, and the protein had a molecular weight of 46.3 kDa as determined by SDS-PAGE. Enzyme characterization confirmed that the purified lipase was most active at pH 6.0, temperature of 50 °C, and substrate concentration of 1.5%. The enzyme was thermostable at 60 °C for 1 h, and the optimum enzyme–substrate reaction time was 30 min. Sodium dodecyl sulfate and commercial detergents did not significantly affect lipase activity during 30-min incubation at 30 °C. Among the metal ions tested, the maximum lipase activity was attained in the presence of Zn2+, followed by Mg2+ and Fe2+. Lipase activity was not significantly affected in the presence of ethylenediaminetetraacetic acid, sodium lauryl sulfate and Triton X-100. Phenylmethylsulfonyl fluoride (1 mM) and the reducing, β-mercaptoethanol significantly inhibited lipase activity. The remarkable stability in the presence of detergents, additives, inhibitors and metal ions makes this lipase unique and a potential candidate for significant biotechnological exploitation. PMID:26887237

Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

PubMed Central

Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C.; Ma, Zhenqiang

2016-01-01

Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics. PMID:27795570

Caenorhabditis elegans PRMT-7 and PRMT-9 Are Evolutionarily Conserved Protein Arginine Methyltransferases with Distinct Substrate Specificities.

PubMed

Hadjikyriacou, Andrea; Clarke, Steven G

2017-05-23

Caenorhabditis elegans protein arginine methyltransferases PRMT-7 and PRMT-9 are two evolutionarily conserved enzymes, with distinct orthologs in plants, invertebrates, and vertebrates. Biochemical characterization of these two enzymes reveals that they share much in common with their mammalian orthologs. C. elegans PRMT-7 produces only monomethylarginine (MMA) and preferentially methylates R-X-R motifs in a broad collection of substrates, including human histone peptides and RG-rich peptides. In addition, the activity of the PRMT-7 enzyme is dependent on temperature, the presence of metal ions, and the reducing agent dithiothreitol. C. elegans PRMT-7 has a substrate specificity and a substrate preference different from those of mammalian PRMT7, and the available X-ray crystal structures of the PRMT7 orthologs show differences in active site architecture. C. elegans PRMT-9, on the other hand, produces symmetric dimethylarginine and MMA on SFTB-2, the conserved C. elegans ortholog of human RNA splicing factor SF3B2, indicating a possible role in the regulation of nematode splicing. In contrast to PRMT-7, C. elegans PRMT-9 appears to be biochemically indistinguishable from its human ortholog.

Substrate-dependent temperature sensitivity of soil organic matter decomposition

NASA Astrophysics Data System (ADS)

Myachina, Olga; Blagodatskaya, Evgenia

2015-04-01

Activity of extracellular enzymes responsible for decomposition of organics is substrate dependent. Quantity of the substrate is the main limiting factor for enzymatic or microbial heterotrophic activity in soils. Different mechanisms of enzymes response to temperature suggested for low and high substrate availability were never proved for real soil conditions. We compared the temperature responses of enzymes-catalyzed reactions in soils. Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation.

Enhanced Raman Scattering from InSb Nanodots; Temperature and Laser-Power Dependent Studies

NASA Astrophysics Data System (ADS)

Wada, Noboru; Takayama, Haruki; Morohashi, Satoshi

2010-03-01

InSb nanodots were uniquely fabricated by vapor-transport on a Si substrate which had previously been bombarded by FBI Ga ions. The InSb nanodots were then examined by spatially-resolved Raman scattering using an Ar-ion laser (λ= 514.5 and 488 nm with P=1˜15 mW) with an optical microscope and CCD detector. In addition to the TO and LO peaks of InSb observed at ˜180 and 191 cm-1 respectively, two peaks were observed at ˜110 and 150 cm-1. Those Raman peaks were tentatively attributed to the 2TA and TO-TA second-order Raman processes. Those two peak intensities appeared to grow at the expense of the TO and LO Raman peak intensities with increasing the sample temperature from 10 K to 450 K. Also, the two-phonon peak intensities increased non-linearly with the probing laser power used. Hot carriers and their interactions with phonons in the restricted regions will be discussed together with Raman scattering results obtained from single-crystal InSb.

Direct in Situ Conversion of Metals into Metal-Organic Frameworks: A Strategy for the Rapid Growth of MOF Films on Metal Substrates.

PubMed

Ji, Hoon; Hwang, Sunhyun; Kim, Keonmok; Kim, CheolGi; Jeong, Nak Cheon

2016-11-30

The fabrication of metal-organic framework (MOF) films on conducting substrates has demonstrated great potential in applications such as electronic conduction and sensing. For these applications, direct contact of the film to the conducting substrate without a self-assembled monolayer (SAM) is a desired step that must be achieved prior to the use of MOF films. In this report, we propose an in situ strategy for the rapid one-step conversion of Cu metal into HKUST-1 films on conducting Cu substrates. The Cu substrate acts both as a conducting substrate and a source of Cu 2+ ions during the synthesis of HKUST-1. This synthesis is possible because of the simultaneous reaction of an oxidizing agent and a deprotonating agent, in which the former agent dissolves the metal substrate to form Cu 2+ ions while the latter agent deprotonates the ligand. Using this strategy, the HKUST-1 film could not only be rapidly synthesized within 5 min but also be directly attached to the Cu substrate. Based on microscopic studies, we propose a plausible mechanism for the growth reaction. Furthermore, we show the versatility of this in situ conversion methodology, applying it to ZIF-8, which comprises Zn 2+ ions and imidazole-based ligands. Using an I 2 -filled HKUST-1 film, we further demonstrate that the direct contact of the MOF film to the conducting substrate makes the material more suitable for use as a sensor or electronic conductor.

Depth enhancement of ion sensitized data

DOEpatents

Lamartine, Bruce C.

2001-01-01

A process of fabricating a durable data storage medium is disclosed, the durable data storage medium capable of storing, digital or alphanumeric characters as well as graphical shapes or characters. Additionally, a durable data storage medium including a substrate having etched characters therein is disclosed, the substrate characterized as containing detectable residual amounts of ions used in the preparation process.

Electronic structure, optical and magnetic studies of PLD-grown (Mn, P)-doped ZnO nanocolumns at room temperature

NASA Astrophysics Data System (ADS)

Phan, The-Long; Ho, T. A.; Dang, N. T.; Nguyen, Manh Cuong; Dao, Van-Duong

2017-07-01

We prepared well-aligned Zn1-x Mn x O:yP nanocolumns (x  =  0-0.02, and y  =  0 and 1 mol%) on SiO2/Si(0 0 1) substrates by using pulsed laser deposition (PLD) and then investigated their electronic structure and optical and magnetic properties at room temperature. The analyses of x-ray photoelectron and x-ray absorption fine structure spectra revealed Mn2+ and/or P ions existing in nanocolumns, where Mn2+ ions are situated in the Zn2+ site of the ZnO-wurtzite structure. Although the incorporation of Mn2+ and/or P ions did not form secondary phases, as confirmed by x-ray and electron diffraction patterns, more lattice defects were created, and consequently changed the band-gap energy as well as the electron-phonon interactions in the nanocolumns. Magnetization versus magnetic-field measurements revealed that all the samples exhibited FM order. In particular, the (Mn, P) co-doping with x  =  0.02 and y  =  1 remarkably enhanced the magnetic moment up to 2.92 µ B/Mn. Based on the results obtained from analyzing the electronic structures, UV-Vis absorption and resonant Raman scattering spectra, and theoretical calculations, we believe that the enhancement of the FM order in (Mn, P)-doped ZnO nanocolumns is due to exchange interactions taking place between vacancy-mediated Mn2+ ions.

Purification an α-galactosidase from Coriolus versicolor with acid-resistant and good degradation ability on raffinose family oligosaccharides.

PubMed

Du, Fang; Liu, Qin; Wang, Hexiang; Ng, TziBin

2014-04-01

An acid-tolerant α-galactosidase (CVGI) was isolated from the fruiting bodies of Coriolus versicolor with a 229-fold of purification and a specific activity of 398.6 units mg⁻¹. It was purified to electrophoretic homogeneity by ion exchange chromatography and gel filtration chromatography. The purified enzyme gave a single band corresponding to a molecular mass of 40 kDa in SDS-PAGE and gel filtration. The α-galactosidase was identified by MALDI-TOF-MS and its inner peptides were sequenced by ESI-MS/MS. The optimum temperature and pH of the enzyme were determined as 60 °C and 3.0, respectively. The enzyme was very stable at a temperature range of 4-50 °C and at a pH range of 2-5. Among the metal ions tested, Cu²⁺, Cd²⁺ and Hg²⁺ ions have been shown to partially inhibit the activity of α-galactosidase, while the activity of CVGI was completely inactivated by Ag⁺ ions. N-bromosuccinamide inhibited enzyme activity by 100 %, indicating the importance of tryptophan residue(s) at or near the active site. CVGI had wide substrate specificity (p-nitrophenyl galactoside, melidiose, raffinose and stachyose). After treatment with CVGI, raffinose family oligosaccharide was hydrolyzed effectively to yield galactose and sucrose. The results showed that the general properties of the enzyme offer potential for use of this α-galactosidase in several production processes.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

NASA Astrophysics Data System (ADS)

Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

2016-06-01

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

PubMed

Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

2016-06-30

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Effect of Substrate and Process Parameters on the Gas-Substrate Convective Heat Transfer Coefficient During Cold Spraying

NASA Astrophysics Data System (ADS)

Mahdavi, Amirhossein; McDonald, André

2018-02-01

The final quality of cold-sprayed coatings can be significantly influenced by gas-substrate heat exchange, due to the dependence of the deposition efficiency of the particles on the substrate temperature distribution. In this study, the effect of the air temperature and pressure, as process parameters, and surface roughness and thickness, as substrate parameters, on the convective heat transfer coefficient of the impinging air jet was investigated. A low-pressure cold spraying unit was used to generate a compressed air jet that impinged on a flat substrate. A comprehensive mathematical model was developed and coupled with experimental data to estimate the heat transfer coefficient and the surface temperature of the substrate. The effect of the air total temperature and pressure on the heat transfer coefficient was studied. It was found that increasing the total pressure would increase the Nusselt number of the impinging air jet, while total temperature of the air jet had negligible effect on the Nusslet number. It was further found that increasing the roughness of the substrate enhanced the heat exchange between the impinging air jet and the substrate. As a result, higher surface temperatures on the rough substrate were measured. The study of the effect of the substrate thickness on the heat transfer coefficient showed that the Nusselt number that was predicted by the model was independent of the thickness of the substrate. The surface temperature profile, however, decreased in increasing radial distances from the stagnation point of the impinging jet as the thickness of the substrate increased. The results of the current study were aimed to inform on the influence and effect of substrate and process parameters on the gas-substrate heat exchange and the surface temperature of the substrate on the final quality of cold-sprayed coatings.

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

PubMed

Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

2015-08-14

Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Fundamental tribological properties of ion-beam-deposited boron nitride films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1989-01-01

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Fundamental tribological properties of ion-beam-deposited boron nitride films

NASA Technical Reports Server (NTRS)

Miyoshi, K.

1990-01-01

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

NASA Astrophysics Data System (ADS)

Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

2015-02-01

Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

Mechanisms of enhanced lithium intercalation into thin film V2O5 in ionic liquids investigated by X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

NASA Astrophysics Data System (ADS)

Santos, Luis; Światowska, Jolanta; Lair, Virginie; Zanna, Sandrine; Seyeux, Antoine; Melendez-Ceballos, Arturo; Tran-Van, Pierre; Cassir, Michel; Marcus, Philippe

2017-10-01

Room temperature ionic liquids (RTILs) attract much attention as a new type of environmentally benign electrolytes for Li-ion batteries due to their numerous interesting physicochemical properties. Here, in this paper, Li intercalation/deintercalation in presence of the N-butyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl) imide (PYR14TFSI) and N-methyl-N-propylpyrrolidinium bis(fluorosulfonyl)imide (PYR13FSI) containing 0.3 M LiTFSI, was evaluated in a thin 100 nm layer of V2O5 deposited on Al substrate by atomic layer deposition. Potentiodynamic tests performed in LiTFSI/Pyr14TFSI show a quasi-reversible Li intercalation during 10 cycles (between 2.4 and 5 V) with an average coulombic efficiency of 99%. The capacity, calculated from the 1st cycle, is found to be 182 mAh g-1, about 19% (±2%) higher than the theoretical capacity reported for V2O5 (147 mAh g-1). X-ray photoelectron spectroscopy analysis confirms that the intercalation of more than 1 mol of Li+ per V2O5 is achieved as also the possible presence of a solid permeable interface (SPI) layer on the V2O5 surface. Likewise, the Li+ in-depth distribution on the V2O5 layer after intercalation in RTILs measured by time-of-flight secondary ion mass spectrometry ion depth profiles, show small irreversible electrode modifications with the presence of lithium through the entire V2O5 layer with significant lithium trapping at the V2O5 layer/Al substrate interface.

Magnetization and anisotropy of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Eskandari, F.; Porter, S. B.; Venkatesan, M.; Kameli, P.; Rode, K.; Coey, J. M. D.

2017-12-01

The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kA m-1 , which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 μB that is associated with the octahedrally coordinated Co2+ ions. The orbital moment is responsible for the magnetostriction and magnetocrystalline anisotropy and its sensitivity to imposed strain. We have systematically investigated the structure and magnetism of films produced by pulsed-laser deposition on different substrates (Ti O2 , MgO, MgA l2O4 , SrTi O3 , LSAT, LaAl O3 ) and as a function of temperature (500 -700 °C) and oxygen pressure (10-4-10 Pa ) . Magnetization at room-temperature ranges from 60 to 440 kA m-1 , and uniaxial substrate-induced anisotropy ranges from +220 kJ m-3 for films on deposited on MgO (100) to -2100 kJ m-3 for films deposited on MgA l2O4 (100), where the room-temperature anisotropy field reaches 14 T. No rearrangement of high-spin Fe3+ and Co2+ cations on tetrahedral and octahedral sites can reduce the magnetization below the bulk value, but a switch from Fe3+ and Co2+ to Fe2+ and low-spin Co3+ on octahedral sites will reduce the low-temperature magnetization to 120 kA m-1 , and a consequent reduction of Curie temperature can bring the room-temperature value to near zero. Possible reasons for the appearance of low-spin cobalt in the thin films are discussed.

Ion/proton-conducting apparatus and method

DOEpatents

Yates, Matthew; Xue, Wei

2014-12-23

A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600.degree. C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors. Additional high-density and gas-tight HAP film compositions may be deposited using a two-step deposition method that includes an electrochemical deposition method followed by a hydrothermal deposition method. The two-step method uses a single hydrothermal deposition solution composition. The method may be used to deposit HAP films including but not limited to at least doped HAP films, and more particularly including carbonated HAP films. In addition, the high-density and gas-tight HAP films may be used in proton exchange membrane fuel cells.

Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

NASA Astrophysics Data System (ADS)

Zhu, Wencong

Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because of its shorter channel length and wider width, however, it also exhibit higher gate leakage current (>10-7 A) than side channel (<10-7 A) due to larger Ga ion implantation and diffusion region in SiO2 after annealing. Hysteresis window increase and positive VON shift were also observed due to the interface trap density increase and carrier density suppression both by Ga ions. Laser interference lithography was applied to define the IGZO active region, which gives more flexibility on TFT channel dimension and circuit modification. He-Cd laser with 325 nm wavelength was used to define 2D array of IGZO islands with period of 2.5 im. Logic gate array was designed and fabricated by combining this 2D array of IGZO islands and FIB direct channel milling. After annealing, device shows on-off feature, but high temperature (400 °C) release more free carrier and results in negative shift of VON. The row selection voltage was also introduced in the design of logic gate array to act as switch of input signals to each row separately. However, due to the long input signal sweeping time, the leakage current cannot be overlooked. The idea can be verified by AC or short pulse input signal.

Advances in low-defect multilayers for EUVL mask blanks

NASA Astrophysics Data System (ADS)

Folta, James A.; Davidson, J. Courtney; Larson, Cindy C.; Walton, Christopher C.; Kearney, Patrick A.

2002-07-01

Low-defect multilayer coatings are required to fabricate mask blanks for Extreme Ultraviolet Lithography (EUVL). The mask blanks consist of high reflectance EUV multilayers on low thermal expansion substrates. A defect density of 0.0025 printable defects/cm2 for both the mask substrate and the multilayer is required to provide a mask blank yield of 60 percent. Current low defect multilayer coating technology allows repeated coating-added defect levels of 0.05/cm2 for defects greater than 90 nm polystyrene latex sphere (PSL) equivalent size for lots of 20 substrates. Extended clean operation of the coating system at levels below 0.08/cm2 for 3 months of operation has also been achieved. Two substrates with zero added defects in the quality area have been fabricated, providing an existence proof that ultra low defect coatings are possible. Increasing the ion source-to-target distance from 410 to 560 mm to reduce undesired coating of the ion source caused the defect density to increase to 0.2/cm2. Deposition and etching diagnostic witness substrates and deposition pinhole cameras showed a much higher level of ion beam spillover (ions missing the sputter target) than expected. Future work will quantify beam spillover, and test designs to reduce spillover, if it is confirmed to be the cause of the increased defect level. The LDD system will also be upgraded to allow clean coating of standard format mask substrates. The upgrade will confirm that the low defect process developed on Si wafers is compatible with the standard mask format 152 mm square substrates, and will provide a clean supply of EUVL mask blanks needed to support development of EUVL mask patterning processes and clean mask handling technologies.

Hydrogen retention in Li and Li-C-O films

NASA Astrophysics Data System (ADS)

Buzi, Luxherta; Nelson, Andrew O.; Yang, Yuxin; Kaita, Robert; Koel, Bruce E.

2017-10-01

The efficiency of Li in binding H isotopes has led to reduced recycling in magnetic fusion devices and improved plasma performance. Since elemental Li surfaces are challenging to maintain in fusion devices due to the presence of impurities, parameterizing and understanding the mechanisms for H retention in various Li compounds (Li-C-O), in addition to pure Li, is crucial for Li plasma-facing material applications. To determine H retention in Li and Li-C-O films, measurements were done under ultrahigh vacuum conditions using temperature programmed desorption (TPD). Thin Li films (20 monolayers) were deposited on a nickel single crystal substrate and irradiated with 500 eV H2+ions at surface temperatures from 90K to 520K. Initial measurements on Li and Li-O films showed that the retention was comparable and dropped exponentially with surface temperature, from 95% at 90 K to 35% at 520 K. Auger electron spectroscopy and TPD showed that H was retained as lithium hydride (LiH) in pure Li and as lithium hydroxide (LiOH) in Li2O, which decomposed to H2O and Li2O at temperatures higher than 470K. H retention in Li-C and Li-C-O films will be determined over a similar temperature range, and the sputtering rate of these layers with H ions will also be reported. This material is based upon work supported by the U.S. Department of Energy, Office of Science/Fusion Energy Sciences under Award Number DE-SC0012890.

Detecting low levels of radionuclides in fluids

DOEpatents

Patch, Keith D.; Morgan, Dean T.

2000-01-01

An apparatus and method for detecting low levels of one or more radionuclides in a fluid sample uses a substrate that includes an ion exchange resin or other sorbent material to collect the radionuclides. A collecting apparatus includes a collecting chamber that exposes the substrate to a measured amount of the fluid sample such that radionuclides in the fluid sample are collected by the ion exchange resin. A drying apparatus, which can include a drying chamber, then dries the substrate. A measuring apparatus measures emissions from radionuclides collected on the substrate. The substrate is positioned in a measuring chamber proximate to a detector, which provides a signal in response to emissions from the radionuclides. Other analysis methods can be used to detect non-radioactive analytes, which can be collected with other types of sorbent materials.

Mitigation of substrate defects in reticles using multilayer buffer layers

DOEpatents

Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

2001-01-01

A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.

2016-12-15

The parameters of multilayer Cd{sub x}Hg{sub 1–x}Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p{sup +}–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10{sup 15} cm{sup –3}. The temperature dependences ofmore » the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n{sup +}–p-type diodes.« less

Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

NASA Astrophysics Data System (ADS)

Sengodan, R.; Shekar, B. Chandar; Sathish, S.

Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Self-assembly of silver nanoparticles as high active surface-enhanced Raman scattering substrate for rapid and trace analysis of uranyl(VI) ions

NASA Astrophysics Data System (ADS)

Wang, Shaofei; Jiang, Jiaolai; Wu, Haoxi; Jia, Jianping; Shao, Lang; Tang, Hao; Ren, Yiming; Chu, Mingfu; Wang, Xiaolin

2017-06-01

A facile surface-enhanced Raman scattering (SERS) substrate based on the self-assembly of silver nanoparticles on the modified silicon wafer was obtained, and for the first time, an advanced SERS analysis method basing on this as-prepared substrate was established for high sensitive and rapid detection of uranyl ions. Due to the weakened bond strength of Odbnd Udbnd O resulting from two kinds of adsorption of uranyl species (;strong; and ;weak; adsorption) on the substrate, the ν1 symmetric stretch vibration frequency of Odbnd Udbnd O shifted from 871 cm- 1 (normal Raman) to 720 cm- 1 and 826 cm- 1 (SERS) along with significant Raman enhancement. Effects of the hydrolysis of uranyl ions on SERS were also investigated, and the SERS band at 826 cm- 1 was first used to approximately define the constitution of uranyl species at trace quantity level. Besides, the SERS intensity was proportional to the variable concentrations of uranyl nitrate ranging from 10- 7 to 10- 3 mol L- 1 with an excellent linear relation (R2 = 0.998), and the detection limit was 10- 7 mol L- 1. Furthermore, the related SERS approach involves low-cost substrate fabrication, rapid and trace analysis simultaneously, and shows great potential applications for the field assays of uranyl ions in the nuclear fuel cycle and environmental monitoring.

Carbon-containing compounds on fusion-related surfaces: Thermal and ion-induced formation and erosion

NASA Astrophysics Data System (ADS)

Linsmeier, Christian

2004-12-01

The deposition of carbon on metals is the unavoidable consequence of the application of different wall materials in present and future fusion experiments like ITER. Presently used and prospected materials besides carbon (CFC materials in high heat load areas) are tungsten and beryllium. The simultaneous application of different materials leads to the formation of surface compounds due to the erosion, transport and re-deposition of material during plasma operations. The formation and erosion processes are governed by widely varying surface temperatures and kinetic energies as well as the spectrum of impinging particles from the plasma. The knowledge of the dependence on these parameters is crucial for the understanding and prediction of the compound formation on wall materials. The formation of surface layers is of great importance, since they not only determine erosion rates, but also influence the ability of the first wall for hydrogen isotope inventory accumulation and release. Surface compound formation, diffusion and erosion phenomena are studied under well-controlled ultra-high vacuum conditions using in-situ X-ray photoelectron spectroscopy (XPS) and ion beam analysis techniques available at a 3 MV tandem accelerator. XPS provides chemical information and allows distinguishing elemental and carbidic phases with high surface sensitivity. Accelerator-based spectroscopies provide quantitative compositional analysis and sensitivity for deuterium in the surface layers. Using these techniques, the formation of carbidic layers on metals is studied from room temperature up to 1700 K. The formation of an interfacial carbide of several monolayers thickness is not only observed for metals with exothermic carbide formation enthalpies, but also in the cases of Ni and Fe which form endothermic carbides. Additional carbon deposited at 300 K remains elemental. Depending on the substrate, carbon diffusion into the bulk starts at elevated temperatures together with additional carbide formation. Depending on the bond nature in the carbide (metallic in the transition metal carbides, ionic e.g. in Be2C), the surface carbide layer is dissolved upon further increased temperatures or remains stable. Carbide formation can also be initiated by ion bombardment, both of chemically inert noble gas ions or C+ or CO+ ions. In the latter case, a deposition-erosion equilibrium develops which leads to a ternary surface layer of constant thickness. A chemical erosion channel is also discussed for the enhanced erosion of thin carbon films on metals by deuterium ions.

Ion sensitivity of large-area epitaxial graphene film on SiC substrate

NASA Astrophysics Data System (ADS)

Mitsuno, Takanori; Taniguchi, Yoshiaki; Ohno, Yasuhide; Nagase, Masao

2017-11-01

We investigated the intrinsic ion sensitivity of graphene field-effect transistors (FETs) fabricated by a resist-free stencil mask lithography process from a large-scale graphene film epitaxially grown on a SiC substrate. A pH-adjusted phosphate-buffered solution was used for the measurement to eliminate the interference of other ions on the graphene FET's ion sensitivity. The charge neutrality point shifted negligibly with changing pH for the pH-adjusted phosphate-buffered solution, whereas for the mixed buffer solution, it shifted toward the negative gate voltage owing to the decrease in the concentration of phthalate ions. This phenomenon is contrary to that observed in previous reports. Overall, our results indicate that the graphene film is intrinsically insensitive to ions except for those with functional groups that interact with the graphene surface.

Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

NASA Astrophysics Data System (ADS)

Zhang, L.; Heinig, N. F.; Bazargan, S.; Abd-Ellah, M.; Moghimi, N.; Leung, K. T.

2015-06-01

The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion-Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation.

Effect of 50MeV Li{sup 3+} ion irradiation on structural, optical and electrical properties of amorphous Se{sub 95}Zn{sub 5} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Shabir, E-mail: shaphyjmi@gmail.com; Sethi, Riti; Nasir, Mohd

2015-08-28

Present work focuses on the effect of swift heavy ion (SHI) irradiation of 50MeV Li{sup 3+} ions by varying the fluencies in the range of 1×10{sup 12} to 5×10{sup 13} ions/cm{sup 2} on the morphological, structural, optical and electrical properties of amorphous Se{sub 95}Zn{sub 5} thin films. Thin films of ~250nm thickness were deposited on cleaned glass substrates by thermal evaporation technique. X-ray diffraction (XRD) analysis shows the pristine thin film of Se{sub 95}Zn{sub 5} growsin hexagonal phase structure. Also it was found that the small peak observed in XRD spectra vanishes after SHI irradiation indicates the defects of themore » material increases. The optical parameters: absorption coefficient (α), extinction coefficient (K), refractive index (n) optical band gap (E{sub g}) and Urbach’s energy (E{sub U}) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200-1000nm. It was found that the values of absorption coefficient, refractive index and extinction coefficient increases while the value optical band gap decreases with the increase of ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model. Electrical properties such as dc conductivity and temperature dependent photoconductivity of investigated thin films were carried out in the temperature range 309-370 K. Analysis of data shows activation energy of dark current is greater as compared to activation energy photocurrent. The value of activation energy decreases with the increase of ion fluence indicates that the defect density of states increases.Also it was found that the value of dc conductivity and photoconductivity increases with the increase of ion fluence.« less

Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

NASA Astrophysics Data System (ADS)

Grave, Daniel A.

Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while keeping a large adatom diffusion length on the film surface. Crystallographic texture evolution in the Gd2O3 films was investigated for different substrate types. At high rates, it was shown that films deposited on different substrates (quartz, silicon, sapphire, and GaN) all had similar theta-2theta diffraction patterns, suggesting that films grew similarly on different substrates due to the low adatom mobility. However, significant differences in texture were observed for films deposited at low rates (< 1 A/s) and high temperature (650°C) on different substrates. For evaluation of in-plane texture in the Gd2O 3 films, pole figure analysis was performed. Mixed phase films deposited at high rates and low temperature showed weak out-of-plane texture and random in-plane texture. Mixed phase films deposited at high temperatures possessed a fiber texture (strong out-of-plane texture), but lacked the necessary adatom mobility to develop in-plane texture. For single phase cubic films grown under low rates of deposition, out-of-plane texture was observed on quartz substrates. However, weak and strong in-plane textures were observed for sapphire and GaN substrates, respectively. The use of ion bombardment resulted in the formation of moderate biaxial texture for films grown on quartz. For films grown on sapphire, a very strong biaxial texture was achieved with ion bombardment which adds additional energy to the system. The effects of processing on the structure, composition, and interfacial chemistry of the Gd2O3 films were investigated. The results showed that films primarily adhered to the Structure-Zone models with a few exceptions. The deviation from the Structure-Zone model was explained by the combined effects of columnar growth, shadowing, and adatom mobility. At low deposition temperatures, decreasing oxygen flow resulted in increased film density due to higher adatom mobility. Films deposited at this temperature were characterized by small (10-15 nm) nanocrystalline grains with some porous disordered regions. The dielectric properties of Si(111)/Gd2O3/Ti/Au MOS capacitors were investigated. Moisture absorption in Gd2O 3 films was found to result in both increased dielectric loss (10x) and inflated dielectric constant values ( 40 %). Heat treatment of the films at 100 °C resulted in outgassing of moisture, reduction in dielectric constant, and excellent frequency dispersion of the dielectric constant over a range of 10 kHz-1 MHz. The effect of film processing on the dielectric constant was systematically investigated. Tuning of the dielectric constant from a value of 11 to a value of 24 was possible by manipulating the structure and crystallographic phase of the material via the processing conditions. Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of GaN/AlGaN/Gd2O3/Ti/Au MOS capacitors were investigated. The effects of processing on fixed oxide charge, trapped oxide charge, and density of interface states were evaluated. Single phase cubic films deposited at low rates with near heteroepitaxial growth were shown to have the lowest density of trapped charge. (Abstract shortened by ProQuest.).

An algorithm for temperature correcting substrate moisture measurements: aligning substrate moisture responses with environmental drivers in polytunnel-grown strawberry plants

NASA Astrophysics Data System (ADS)

Goodchild, Martin; Janes, Stuart; Jenkins, Malcolm; Nicholl, Chris; Kühn, Karl

2015-04-01

The aim of this work is to assess the use of temperature corrected substrate moisture data to improve the relationship between environmental drivers and the measurement of substrate moisture content in high porosity soil-free growing environments such as coir. Substrate moisture sensor data collected from strawberry plants grown in coir bags installed in a table-top system under a polytunnel illustrates the impact of temperature on capacitance-based moisture measurements. Substrate moisture measurements made in our coir arrangement possess the negative temperature coefficient of the permittivity of water where diurnal changes in moisture content oppose those of substrate temperature. The diurnal substrate temperature variation was seen to range from 7° C to 25° C resulting in a clearly observable temperature effect in substrate moisture content measurements during the 23 day test period. In the laboratory we measured the ML3 soil moisture sensor (ThetaProbe) response to temperature in Air, dry glass beads and water saturated glass beads and used a three-phase alpha (α) mixing model, also known as the Complex Refractive Index Model (CRIM), to derive the permittivity temperature coefficients for glass and water. We derived the α value and estimated the temperature coefficient for water - for sensors operating at 100MHz. Both results are good agreement with published data. By applying the CRIM equation with the temperature coefficients of glass and water the moisture temperature coefficient of saturated glass beads has been reduced by more than an order of magnitude to a moisture temperature coefficient of

Decomposition of multilayer benzene and n-hexane films on vanadium.

PubMed

Souda, Ryutaro

2015-09-21

Reactions of multilayer hydrocarbon films with a polycrystalline V substrate have been investigated using temperature-programmed desorption and time-of-flight secondary ion mass spectrometry. Most of the benzene molecules were dissociated on V, as evidenced by the strong depression in the thermal desorption yields of physisorbed species at 150 K. The reaction products dehydrogenated gradually after the multilayer film disappeared from the surface. Large amount of oxygen was needed to passivate the benzene decomposition on V. These behaviors indicate that the subsurface sites of V play a role in multilayer benzene decomposition. Decomposition of the n-hexane multilayer films is manifested by the desorption of methane at 105 K and gradual hydrogen desorption starting at this temperature, indicating that C-C bond scission precedes C-H bond cleavage. The n-hexane dissociation temperature is considerably lower than the thermal desorption temperature of the physisorbed species (140 K). The n-hexane multilayer morphology changes at the decomposition temperature, suggesting that a liquid-like phase formed after crystallization plays a role in the low-temperature decomposition of n-hexane.

Room temperature CO and H2 sensing with carbon nanoparticles.

PubMed

Kim, Daegyu; Pikhitsa, Peter V; Yang, Hongjoo; Choi, Mansoo

2011-12-02

We report on a shell-shaped carbon nanoparticle (SCNP)-based gas sensor that reversibly detects reducing gas molecules such as CO and H(2) at room temperature both in air and inert atmosphere. Crystalline SCNPs were synthesized by laser-assisted reactions in pure acetylene gas flow, chemically treated to obtain well-dispersed SCNPs and then patterned on a substrate by the ion-induced focusing method. Our chemically functionalized SCNP-based gas sensor works for low concentrations of CO and H(2) at room temperature even without Pd or Pt catalysts commonly used for splitting H(2) molecules into reactive H atoms, while metal oxide gas sensors and bare carbon-nanotube-based gas sensors for sensing CO and H(2) molecules can operate only at elevated temperatures. A pristine SCNP-based gas sensor was also examined to prove the role of functional groups formed on the surface of functionalized SCNPs. A pristine SCNP gas sensor showed no response to reducing gases at room temperature but a significant response at elevated temperature, indicating a different sensing mechanism from a chemically functionalized SCNP sensor.

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, Klaus J.

1993-01-01

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

Effect of chlorine in clay-mineral specimens prepared on silver metal-membrane mounts for X-ray powder diffraction analysis

USGS Publications Warehouse

Poppe, L.J.; Commeau, J.A.; Pense, G.M.

1989-01-01

Silver metal-membrane filters are commonly used as substrates in the preparation of oriented clay-mineral specimens for X-ray powder diffraction (XRD). They are relatively unaffected by organic solvent treatments and specimens can be prepared rapidly. The filter mounts are adaptable to automatic sample changers, have few discrete reflections at higher 20 angles, and, because of the high atomic number of silver, produce a relatively low overall background compared with other membrane filters, such as cellulose (Poppe and Hathaway, 1979). The silver metal-membrane filters, however, present some problems after heat treatment if either the filters or the samples contain significant amounts of chlorine. At elevated temperature, the chloride ions react with the silver substrate to form crystalline compounds. These compounds change the mass-absorption coefficient of the sample, reducing peak intensities and areas and, therefore, complicating the semiquantitative estimation of clay minerals. A simple procedure that eliminates most of the chloride from a sample and the silver metal-membrane substrate is presented here.

Purification and characterization of polyphenol oxidase from jackfruit ( Artocarpus heterophyllus ) bulbs.

PubMed

Tao, Yi-Ming; Yao, Le-Yi; Qin, Qiu-Yan; Shen, Wang

2013-12-26

Polyphenol oxidase (PPO) from jackfruit bulb was purified through acetone precipitation, ion-exchange column, and gel filtration column. PPO was a dimer with the molecular weight of 130 kDa determined by sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) and gel filtration. The Km was 8.3 and 18.2 mM using catechol and 4-methylcatechol as substrates, respectively. The optimum pH was 7.0 (catechol as the substrate) or 6.5 (4-methylcatechol as the substrate). The optimum temperature was 8 °C. The enzyme was stable below 40 °C. The activation energy (Ea) of heat inactivation was estimated to be 103.30 kJ/mol. The PPO activity was activated by Mn(2+), SDS, Tween-20, Triton X-100, citric acid, and malic acid but inhibited by K(+), Zn(2+), Mg(2+), Ca(2+), Ba(2+), cetyl trimethyl ammonium bromide (CTAB), kojic acid, tropolone, glutathione (GSH), cysteine (Cys), and ascorbic acid (AA). Cys and AA were effective to reduce browning of jackfruit bulbs during the storage at 8 °C for 15 days.

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Platinized tin oxide catalysts for CO2 lasers: Effects of pretreatment

NASA Technical Reports Server (NTRS)

Gardner, Steven D.; Hoflund, Gar B.; Schryer, David R.; Upchurch, Billy T.

1990-01-01

Platinized tin oxide surfaces used for low-temperature CO oxidation in CO2 lasers have been characterized before and after reduction in CO at 125 and 250 C using ion scattering spectroscopy (ISS) and X ray photoelectron spectroscopy (XPS). XPS indicates that the Pt is present initially as PtO2. Reduction at 125 C converts the PtO2 to Pt(OH)2 while reduction at 250 C converts the PtO2 to metallic Pt. ISS shows that the Pt in the outermost atomic layer of the catalyst is mostly covered by substrate species during the 250 C reduction. Both the ISS and XPS results are consistent with Pt/Sn alloy formation. The surface dehydration and migration of substrate species over surface Pt and Sn appear to explain why a CO pretreatment at 250 C produces inferior CO oxidation activities compared to a 125 C pretreatment.

Platinized tin oxide catalysts for CO2 lasers - Effects of pretreatment

NASA Technical Reports Server (NTRS)

Gardner, Steven D.; Hoflund, Gar B.; Schryer, David R.; Upchurch, Billy T.

1989-01-01

Platinized tin oxide surfaces used for low-temperature CO oxidation in CO2 lasers have been characterized before and after reduction in CO at 125 and 250 C using ion scattering spectroscopy (ISS) and X-ray photoelectron spectroscopy (XPS). XPS indicates that the Pt is present initially as Pto2. Reduction at 125 C converts the PtO2 to Pt(OH)2 while reduction at 250 C converts the PtO2 to metallic Pt. ISS shows that the Pt in the outermost atomic layer of the catalyst is mostly covered by substrate species during the 250 C reduction. Both the ISS and XPS results are consistent with Pt/Sn alloy formation. The surface dehydration and migration of substrate species over surface Pt and Sn appear to explain why a CO pretreatment at 250 C produces inferior CO oxidation activities compared to a 125 C pretreatment.

Synthesis of p-type ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Look, D. C.; Wrobel, J. M.; Jeong, H. M.; White, H. W.

2000-06-01

p-Type ZnO obtained by arsenic (As) doping is reported for the first time. Arsenic-doped ZnO (ZnO : As) films have been deposited on (0 0 1)-GaAs substrates by pulsed laser ablation. The process of synthesizing p-type ZnO : As films was performed in an ambient gas of ultra-pure (99.999%) oxygen. The ambient gas pressure was 35 mTorr with the substrate temperature in the range 300-450°C. ZnO films grown at 400°C and 450°C are p-type and As is a good acceptor. The acceptor peak is located at 3.32 eV and its binding energy is about 100 meV. Acceptor concentrations of As atoms in ZnO films were in the range from high 10 17 to high 10 21 atoms/cm 3 as determined by secondary ion mass spectroscopy (SIMS) and Hall effect measurements.

Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces

DTIC Science & Technology

2007-12-14

20.20 Ga (3d 5 2 ) in Ga2O3 21.00 Sb (4d 5 2 ) in GaSb 31.94 Sb (4d 5 2 ) 33.44 Sb (4d 5 2 ) in Sb2O3 34.50 Sb (4d 5 2 ) in Sb2O5 35.70 GaSb Sb2O3...growth. Once again, only Ga2O3 was observed at the interface. TXPS measurements revealed the presence of the F 1s peak up to substrate temperatures of...with a GaBr3 peak at 22.7 eV. Again, there is no published data for GaBr3 in this region but it is consistentGa2O3 Ga 3d GaSb Ga2O3 GaSb Ga 25 20 15 25

Bioactive and Porous Metal Coatings for Improved Tissue Regeneration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, A. A.

Our first objective was to develop the SIM process for the deposition of calcium phosphate films. This process is based on the observation that, in nature, living organisms use macromolecules to control the nucleation and growth of mineral phases. These macromolecules act as templates where various charged functional groups, contained within the molecule, can interact with the ions in the surrounding media, thus stimulating crystal nucleation and growth. Rather than using complex proteins or biopolymers, surface modification schemes were developed to place simple functional groups on the underlying substrate using self-assembling monolayers. Once the substrate was chemically modified, it wasmore » then placed into an aqueous solution containing soluble precursors of the desired mineral coating. Solution pH, ionic concentration and temperature is maintained in a regime where the solution is supersaturated with respect to the desired mineral phase, thereby creating the driving force for nucleation and growth.« less

Solid-state reaction of iron on β-SiC

NASA Astrophysics Data System (ADS)

Kaplan, R.; Klein, P. H.; Addamiano, A.

1985-07-01

The solid-state reaction between Fe and β-SiC has been studied using Auger-electron and electron-energy-loss spectroscopies and ion sputter profiling. Fe films from submonolayer coverage to 1000 Å thickness were grown in ultrahigh vacuum, and annealed at temperatures up to 550 °C. Auger line-shape changes occurred even for initial Fe coverage at 190 °C, indicating substantial bond alteration in the SiC substrate. A 1000-Å film was largely consumed by reaction with Si and C diffused from the substrate during a 500 °C anneal, and exhibited both Fe silicide and carbide throughout most of its original volume and free C present as graphite primarily at the surface. As an aid in identifying the reaction products studied in this work, Auger line shapes were first determined for the SiLVV peak in Fe silicide and for the CKLL transition in Fe carbide.

Highly textured oxypnictide superconducting thin films on metal substrates

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Kurth, Fritz; Chihara, Masashi; Sumiya, Naoki; Grinenko, Vadim; Ichinose, Ataru; Tsukada, Ichiro; Hänisch, Jens; Matias, Vladimir; Hatano, Takafumi; Holzapfel, Bernhard; Ikuta, Hiroshi

2014-10-01

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 × 10 4 A / cm 2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc.

Development of an optical thermal history coating sensor based on the oxidation of a divalent rare earth ion phosphor

NASA Astrophysics Data System (ADS)

Yáñez-González, Álvaro; Ruiz-Trejo, Enrique; van Wachem, Berend; Skinner, Stephen; Beyrau, Frank; Heyes, Andrew

2016-11-01

The measurement of temperatures in gas turbines, boilers, heat exchangers and other components exposed to hot gases is essential to design energy efficient systems and improve maintenance procedures. When on-line measurements, such as those performed with thermocouples and pyrometers, are not possible or inconvenient, the maximum temperatures of operation can be recorded and measured off-line after operation. Although thermal paints have been used for many years for this purpose, a novel technique based on irreversible changes in the optical properties of thermographic phosphors, can overcome some of the disadvantages of previous methods. In particular, oxidation of the divalent rare earth ion phosphor BaMgAl10O17:Eu (BAM:Eu) has shown great potential for temperature sensing between 700 °C and 1200 °C. The emission spectra of this phosphor change with temperature, which permits to define an intensity ratio between different lines in the spectra that can be used as a measurand of the temperature. In this paper, the study of the sensing capabilities of a sensor coating based on BAM:Eu phosphor material is addressed for the first time. The sensitivity of the intensity ratio is investigated in the temperature range from 800 °C to 1100 °C, and is proved to be affected by ionic diffusion of transition metals from the substrate. The use of an interlayer made of zirconia proves efficient in reducing ionic diffusion and coatings with this diffusion barrier present sensitivity comparable to that of the powder material.

Plasma-assisted physical vapor deposition surface treatments for tribological control

NASA Technical Reports Server (NTRS)

Spalvins, Talivaldis

1990-01-01

In any mechanical or engineering system where contacting surfaces are in relative motion, adhesion, wear, and friction affect reliability and performance. With the advancement of space age transportation systems, the tribological requirements have dramatically increased. This is due to the optimized design, precision tolerance requirements, and high reliability expected for solid lubricating films in order to withstand hostile operating conditions (vacuum, high-low temperatures, high loads, and space radiation). For these problem areas the ion-assisted deposition/modification processes (plasma-based and ion beam techniques) offer the greatest potential for the synthesis of thin films and the tailoring of adherence and chemical and structural properties for optimized tribological performance. The present practices and new approaches of applying soft solid lubricant and hard wear resistant films to engineering substrates are reviewed. The ion bombardment treatments have increased film adherence, lowered friction coefficients, and enhanced wear life of the solid lubricating films such as the dichalcogenides (MoS2) and the soft metals (Au, Ag, Pb). Currently, sputtering is the preferred method of applying MoS2 films; and ion plating, the soft metallic films. Ultralow friction coefficients (less than 0.01) were achieved with sputtered MoS2. Further, new diamond-like carbon and BN lubricating films are being developed by using the ion assisted deposition techniques.

Angiotensin-I converting enzyme (ACE): structure, biological roles, and molecular basis for chloride ion dependence.

PubMed

Masuyer, Geoffrey; Yates, Christopher J; Sturrock, Edward D; Acharya, K Ravi

2014-10-01

Somatic angiotensin-I converting enzyme (sACE) has an essential role in the regulation of blood pressure and electrolyte fluid homeostasis. It is a zinc protease that cleaves angiotensin-I (AngI), bradykinin, and a broad range of other signalling peptides. The enzyme activity is provided by two homologous domains (N- and C-), which display clear differences in substrate specificities and chloride activation. The presence of chloride ions in sACE and its unusual role in activity was identified early on in the characterisation of the enzyme. The molecular mechanisms of chloride activation have been investigated thoroughly through mutagenesis studies and shown to be substrate-dependent. Recent results from X-ray crystallography structural analysis have provided the basis for the intricate interactions between ACE, its substrate and chloride ions. Here we describe the role of chloride ions in human ACE and its physiological consequences. Insights into the chloride activation of the N- and C-domains could impact the design of improved domain-specific ACE inhibitors.

Parametric test of a zirconium (4) oxide-polyacrylic acid dual layer hyperfiltration membrane with spacecraft washwater

NASA Technical Reports Server (NTRS)

Brandon, C. A.; Gaddis, J. L.; El-Nashar, A. M.

1975-01-01

Performance data consisting of solute rejections and product flux were measured, as dependent on the operation parameters. These parameters and ranges were pressure (500,000 n/m2 to 700,000 n/m2), temperature (74 C to 95 C), velocity (1.6 M/sec to 10 M/sec), and concentration (up to 14x). Tests were carried out on analog washwater. Data presented include rejections of organic materials, ammonia, urea, and an assortment of ions. The membrane used was deposited in situ on a porcelain ceramic substrate.

Fabrication of amorphous silica nanowires via oxygen plasma treatment of polymers on silicon

NASA Astrophysics Data System (ADS)

Chen, Zhuojie; She, Didi; Chen, Qinghua; Li, Yanmei; Wu, Wengang

2018-02-01

We demonstrate a facile non-catalytic method of fabricating silica nanowires at room temperature. Different polymers including photoresists, parylene C and polystyrene are patterned into pedestals on the silicon substrates. The silica nanowires are obtained via the oxygen plasma treatment on those pedestals. Compared to traditional strategies of silica nanowire fabrication, this method is much simpler and low-cost. Through designing the proper initial patterns and plasma process parameters, the method can be used to fabricate various regiment nano-scale silica structure arrays in any laboratory with a regular oxygen-plasma-based cleaner or reactive-ion-etching equipment.

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glavin, Nicholas R., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil; School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; Muratore, Christopher

2015-04-28

Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identifymore » and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.« less

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

NASA Astrophysics Data System (ADS)

Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

1998-06-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

Cholesterol-Based Grafted Polymer Brushes as Alignment Coating with Temperature-Tuned Anchoring for Nematic Liquid Crystals.

PubMed

Stetsyshyn, Yurij; Raczkowska, Joanna; Budkowski, Andrzej; Awsiuk, Kamil; Kostruba, Andriy; Nastyshyn, Svyatoslav; Harhay, Khrystyna; Lychkovskyy, Edward; Ohar, Halyna; Nastishin, Yuriy

2016-10-11

Novel alignment coating with temperature-tuned anchoring for nematic liquid crystals (NLCs) was successfully fabricated in three step process, involving polymerization of poly(cholesteryl methacrylate) (PChMa) from oligoproxide grafted to the glass surface premodified with 3-aminopropyltriethoxysilane. Molecular composition, thickness, wettability of the PChMa coating and its alignment action for a NLC were examined with time of flight-secondary ion mass spectrometry, ellipsometry, contact angle measurements, polarization optical microscopy and commercially produced PolScope technique allowing for mapping of the optic axis and optical retardance within the microscope field view. We find that the PChMa coating provides a specific monotonous increase (decrease) in the tilt angle of the NLC director with respect to the substrates normal upon heating (cooling) referred to as anchoring tuning.

Factors influencing phase compositions and structure of plasma sprayed hydroxyapatite coatings during heat treatment

NASA Astrophysics Data System (ADS)

Lu, Yu-Peng; Song, Yi-Zhong; Zhu, Rui-Fu; Li, Mu-Sen; Lei, Ting-Quan

2003-02-01

Heat treatment was expected to enhance the long-term reliability of hydroxyapatite (HA) coatings on metal substrates. In this study, factors influencing phase compositions and structure of plasma sprayed hydroxyapatite coatings during heat treatment were carefully analyzed. The phases were characterized by using X-ray diffraction (XRD), the OH - ion contents were determined by Fourier transform infrared (FTIR) spectroscopy. Of the involved factors, heating temperature is of more importance. The appropriate heat treatments is (600- 700 ° C)×2 h for coatings made from fine particles (10-20 μm) and 600 ° C×2 h for coatings made from coarse particles (50-80 μm). The excessive high temperatures and long holding times were unfavorable for the structural integrity of HA.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Economou, Demetre J.

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods includemore » the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.« less

Ion plated gold films: Properties, tribological behavior and performance

NASA Technical Reports Server (NTRS)

Spalvins, Talivaldis

1987-01-01

The glow discharge energizing favorably modifies and controls the coating/substrate adherence and the nucleation and growth sequence of ion plated gold films. As a result the adherence, coherence, internal stresses, and morphology of the films are significantly improved. Gold ion plated films because of their graded coating/substrate interface and fine uniform densely packed microstructure not only improve the tribological properties but also induce a surface strengthening effect which improves the mechanical properties such as yield, tensile, and fatigue strength. Consequently significant improvements in the tribological performance of ion plated gold films as compared to vapor deposited gold films are shown in terms of decreased friction/wear and prolonged endurance life.

Development and Characterization of a Hybrid Atmospheric Pressure Plasma Electrospinning System for Nanofiber Enhancement

NASA Astrophysics Data System (ADS)

Nowak, Joshua Michael

A hybrid atmospheric pressure-electrospinning plasma system was developed to be used for the production of nanofibers and enhance their performance for various applications. Electrospun nanofibers are excellent candidates for protective clothing in the field of chemical and biological warfare defense; however, nanofibers are structurally weak and easily abrade and tear. They can be strengthened through the support of a substrate fabric, but they do not adhere well to substrates. Through the use of the developed hybrid system with either pure He or He/O2 (99/1) feed gas, adherence to the substrate along with abrasion and flex resistance were improved. The plasma source was diagnosed electrically, thermally, and optically. An equivalent circuit model was developed for non-thermal, highly collisional plasmas that can solve for average electron temperature and electron number density. The obtained temperatures (~ 3eV) correlate very well with the results of a neutral Bremsstrahlung continuum matching technique that was also employed. Using the temperatures and number densities obtained from the circuit model and the optical spectroscopy, a global chemical kinetics code was written in order to solve for radical and ion concentrations. This code shows that there are significant concentrations of oxygen radicals present. The XPS analysis confirmed that there was an increase of surface oxygen from 11.1% up to 16.6% for the He/O2 plasma and that the C-O bonding, which was not present in the control samples, has increased to 45.4%. The adhesive strength to the substrate has a significant increase of 81% for helium plasma and 144% for He/O2 plasma; however, these values remain below the desired values for protective clothing applications. The hybrid system displayed the ability to oxygenate nanofibers as they are being electrospun and shows the feasibility of making other surface modifications. The developed circuit model and chemical kinetics code both show promise as tools for deterministic atmospheric pressure plasma research in the field of surface modifications.

High definition surface micromachining of LiNbO 3 by ion implantation

NASA Astrophysics Data System (ADS)

Chiarini, M.; Bentini, G. G.; Bianconi, M.; De Nicola, P.

2010-10-01

High Energy Ion Implantation (HEII) of both medium and light mass ions has been successfully applied for the surface micromachining of single crystal LiNbO 3 (LN) substrates. It has been demonstrated that the ion implantation process generates high differential etch rates in the LN implanted areas, when suitable implantation parameters, such as ion species, fluence and energy, are chosen. In particular, when traditional LN etching solutions are applied to suitably ion implanted regions, etch rates values up to three orders of magnitude higher than the typical etching rates of the virgin material, are registered. Further, the enhancement in the etching rate has been observed on x, y and z-cut single crystalline material, and, due to the physical nature of the implantation process, it is expected that it can be equivalently applied also to substrates with different crystallographic orientations. This technique, associated with standard photolithographic technologies, allows to generate in a fast and accurate way very high aspect ratio relief micrometric structures on LN single crystal surface. In this work a description of the developed technology is reported together with some examples of produced micromachined structures: in particular very precisely defined self sustaining suspended structures, such as beams and membranes, generated on LN substrates, are presented. The developed technology opens the way to actual three dimensional micromachining of LN single crystals substrates and, due to the peculiar properties characterising this material, (pyroelectric, electro-optic, acousto-optic, etc.), it allows the design and the production of complex integrated elements, characterised by micrometric features and suitable for the generation of advanced Micro Electro Optical Systems (MEOS).

Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

PubMed Central

Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

2016-01-01

We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications. PMID:26785682

Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

NASA Astrophysics Data System (ADS)

Wei, Ye; Sang, Shengbo; Zhou, Bing; Deng, Xiao; Chai, Jing; Ji, Jianlong; Ge, Yang; Huo, Yuanliang; Zhang, Wendong

2017-09-01

Carbon cluster ion implantation is an important technique in fabricating functional devices at micro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting-edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behavior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency (IE) is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices’ properties. Project supported by the National Natural Science Foundation of China (Nos. 51622507, 61471255, 61474079, 61403273, 51502193, 51205273), the Natural Science Foundation of Shanxi (Nos. 201601D021057, 201603D421035), the Youth Foundation Project of Shanxi Province (Nos. 2015021097), the Doctoral Fund of MOE of China (No. 20131402110013), the National High Technology Research and Development Program of China (No. 2015AA042601), and the Specialized Project in Public Welfare from The Ministry of Water Resources of China (Nos. 1261530110110).

Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial.

PubMed

Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

2016-01-20

We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 10(6) and 3.72 × 10(6) respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

Freezing and melting of salt hydrates next to solid surfaces probed by infrared-visible sum frequency generation spectroscopy.

PubMed

Anim-Danso, Emmanuel; Zhang, Yu; Dhinojwala, Ali

2013-06-12

Understanding the freezing of salt solutions near solid surfaces is important in many scientific fields. Here we use sum frequency generation (SFG) spectroscopy to study the freezing of a NaCl solution next to a sapphire substrate. During cooling we observe two transitions. The first corresponds to segregation of concentrated brine next to the sapphire surface as we cool the system down to the region where ice and brine phases coexist. At this transition, the intensity of the ice-like peak decreases, suggesting the disruption of hydrogen-bonding by sodium ions. The second transition corresponds to the formation of NaCl hydrates with abrupt changes in both the SFG intensity and the sharpness of spectral peaks. The similarity in the position of the SFG peaks with those observed using IR and Raman spectroscopy indicates the formation of NaCl·2H2O crystals next to the sapphire substrate. The melting temperatures of the hydrates are very similar to those reported for bulk NaCl·2H2O. This study enhances our understanding of nucleation and freezing of salt solutions on solid surfaces and the effects of salt ions on the structure of interfacial ice.

Structural and tribological properties of CrTiAlN coatings on Mg alloy by closed-field unbalanced magnetron sputtering ion plating

NASA Astrophysics Data System (ADS)

Shi, Yongjing; Long, Siyuan; Yang, Shicai; Pan, Fusheng

2008-09-01

In this paper, a series of multi-layer hard coating system of CrTiAlN has been prepared by closed-field unbalanced magnetron sputtering ion plating (CFUBMSIP) technique in a gas mixture of Ar + N 2. The coatings were deposited onto AZ31 Mg alloy substrates. During deposition step, technological temperature and metallic atom concentration of coatings were controlled by adjusting the currents of different metal magnetron targets. The nitrogen level was varied by using the feedback control of plasma optical emission monitor (OEM). The structural, mechanical and tribological properties of coatings were characterized by means of X-ray photoelectron spectrometry, high-resolution transmission electron microscope, field emission scanning electron microscope (FESEM), micro-hardness tester, and scratch and ball-on-disc tester. The experimental results show that the N atomic concentration increases and the oxide on the top of coatings decreases; furthermore the modulation period and the friction coefficient decrease with the N 2 level increasing. The outstanding mechanical property can be acquired at medium N 2 level, and the CrTiAlN coatings on AZ31 Mg alloy substrates outperform the uncoated M42 high speed steel (HSS) and the uncoated 316 stainless steel (SS).

Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

NASA Astrophysics Data System (ADS)

Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

2016-01-01

We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

Fabrication of monolithic microfluidic channels in diamond with ion beam lithography

NASA Astrophysics Data System (ADS)

Picollo, F.; Battiato, A.; Boarino, L.; Ditalia Tchernij, S.; Enrico, E.; Forneris, J.; Gilardino, A.; Jakšić, M.; Sardi, F.; Skukan, N.; Tengattini, A.; Olivero, P.; Re, A.; Vittone, E.

2017-08-01

In the present work, we report on the monolithic fabrication by means of ion beam lithography of hollow micro-channels within a diamond substrate, to be employed for microfluidic applications. The fabrication strategy takes advantage of ion beam induced damage to convert diamond into graphite, which is characterized by a higher reactivity to oxidative etching with respect to the chemically inert pristine structure. This phase transition occurs in sub-superficial layers thanks to the peculiar damage profile of MeV ions, which mostly damage the target material at their end of range. The structures were obtained by irradiating commercial CVD diamond samples with a micrometric collimated C+ ion beam at three different energies (4 MeV, 3.5 MeV and 3 MeV) at a total fluence of 2 × 1016 cm-2. The chosen multiple-energy implantation strategy allows to obtain a thick box-like highly damaged region ranging from 1.6 μm to 2.1 μm below the sample surface. High-temperature annealing was performed to both promote the graphitization of the ion-induced amorphous layer and to recover the pristine crystalline structure in the cap layer. Finally, the graphite was removed by ozone etching, obtaining monolithic microfluidic structures. These prototypal microfluidic devices were tested injecting aqueous solutions and the evidence of the passage of fluids through the channels was confirmed by confocal fluorescent microscopy.

Dopant Selective Reactive Ion Etching of Silicon Carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert (Inventor)

2016-01-01

A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

Probing Atomic, Electronic, and Optical Structures of Nanoparticle Photocatalysts Using Fast Electrons

NASA Astrophysics Data System (ADS)

Liu, Qianlang

Graphene has attracted great interest in many fields due to its outstanding electronic and chemical properties. Among them, its surface inertness and high thermal stability makes graphene a promising candidate as a protective material for transition metal surfaces. Recent studies show, however, that small molecules, such as O2, CO and H2O, intercalate between a graphene film and a metal substrate at particular temperatures. The intercalation of O2 between graphene and Ru(0001) is studied with 3 keV helium ion scattering and low energy electron diffraction. It is shown that O2 intercalates between the graphene and the Ru(0001) substrate at a temperature of 650 K and does not adsorb onto the graphene surface. Nevertheless, the graphene layer efficiently avoids both intercalation and adsorption of oxygen at room temperature. It is also found that the intercalated oxygen thermally desorbs from the surface after it is heated to 800 K. Such a desorption is not, however, observed for oxygen dissociatively adsorbed on a bare Ru(0001) surface until 1200 K. It is thus inferred that the oxygen intercalated between graphene and Ru(0001) is in a molecular form. In addition, part of the graphene overlayer is etched by a chemical reaction during the thermal desorption of oxygen. The role of the defects on the graphene layer is also studied. Defects are introduced by 50 eV Ar+ sputtering, which creates single vacancies with a quick sputtering or larger open areas of substrate following a prolonged sputtering. It is found that oxygen molecularly adsorbs at single carbon vacancies even at room temperature, which does not occur on a complete graphene layer. Following post-annealing to 600 K, it is observed that such adsorbed oxygen diffuses to become intercalated between graphene and Ru(0001). Oxygen dissociatively adsorbs in the large open areas of exposed substrate by forming strong oxygen-metal bonds. It is also found that the presence of defects facilitates the intercalation of oxygen and improves the etching efficiency of the graphene during the desorption of oxygen.

Silvering substrates after CO2 snow cleaning

NASA Astrophysics Data System (ADS)

Zito, Richard R.

2005-09-01

There have been some questions in the astronomical community concerning the quality of silver coatings deposited on substrates that have been cleaned with carbon dioxide snow. These questions center around the possible existence of carbonate ions left behind on the substrate by CO2. Such carbonate ions could react with deposited silver to produce insoluble silver carbonate, thereby reducing film adhesion and reflectivity. Carbonate ions could be produced from CO2 via the following mechanism. First, during CO2 snow cleaning, a small amount of moisture can condense on a surface. This is especially true if the jet of CO2 is allowed to dwell on one spot. CO2 gas can dissolve in this moisture, producing carbonic acid, which can undergo two acid dissociations to form carbonate ions. In reality, it is highly unlikely that charged carbonate ions will remain stable on a substrate for very long. As condensed water evaporates, Le Chatelier's principle will shift the equilibrium of the chain of reactions that produced carbonate back to CO2 gas. Furthermore, the hydration of CO2 reaction of CO2 with H20) is an extremely slow process, and the total dehydrogenation of carbonic acid is not favored. Living tissues that must carry out the equilibration of carbonic acid and CO2 use the enzyme carbonic anhydrase to speed up the reaction by a factor of one million. But no such enzymatic action is present on a clean mirror substrate. In short, the worst case analysis presented below shows that the ratio of silver atoms to carbonate radicals must be at least 500 million to one. The results of chemical tests presented here support this view. Furthermore, film lift-off tests, also presented in this report, show that silver film adhesion to fused silica substrates is actually enhanced by CO2 snow cleaning.

Adaption of a microwave plasma source for low temperature diamond deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulczynski, M.; Reinhard, D.K.; Asmussen, J.

1996-12-31

This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substratemore » heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.« less

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

1984-01-01

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

2G HTS wires made on 30 μm thick Hastelloy substrate

NASA Astrophysics Data System (ADS)

Sundaram, A.; Zhang, Y.; Knoll, A. R.; Abraimov, D.; Brownsey, P.; Kasahara, M.; Carota, G. M.; Nakasaki, R.; Cameron, J. B.; Schwab, G.; Hope, L. V.; Schmidt, R. M.; Kuraseko, H.; Fukushima, T.; Hazelton, D. W.

2016-10-01

REBCO (RE = rare earth) based high temperature superconducting (HTS) wires are now being utilized for the development of electric and electromagnetic devices for various industrial, scientific and medical applications. In the last several years, the increasing efforts in using the so-called second generation (2G) HTS wires for some of the applications require a further increase in their engineering current density (J e). The applications are those typically related to high magnetic fields where the higher J e of a REBCO wire, in addition to its higher irreversibility fields and higher mechanical strength, is already a major advantage over other superconducting wires. An effective way to increase the J e is to decrease the total thickness of a wire, for which using a thinner substrate becomes an obvious and attractive approach. By using our IBAD-MOCVD (ion beam assisted deposition-metal organic chemical vapor deposition) technology we have successfully made 2G HTS wires using a Hastelloy® C276 substrate that is only 30 μm in thickness. By using this thinner substrate instead of the typical 50 μm thick substrate and with a same critical current (I c), the J e of a wire can be increased by 30% to 45% depending on the copper stabilizer thickness. In this paper, we report the fabrication and characterization of the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate. It was shown that with the optimization in the processing protocol, the surface of the thinner Hastelloy® C276 substrate can be readily electropolished to the quality needed for the deposition of the buffer stack. Same in the architecture as that on the standard 50 μm thick substrate, the buffer stack made on the 30 μm thick substrate showed an in-plane texture with a Δϕ of around 6.7° in the LaMnO3 cap layer. Low-temperature in-field transport measurement results suggest that the wires on the thinner substrate had achieved equivalent superconducting performance, most importantly the I c, as those on the 50 μm thick substrate. It is expected the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate, the thinnest and with the highest J e to date, will greatly benefit such applications as high field magnets and high current cables.

Transmembrane domain I contributes to the permeation pathway for serotonin and ions in the serotonin transporter.

PubMed

Barker, E L; Moore, K R; Rakhshan, F; Blakely, R D

1999-06-15

Mutation of a conserved Asp (D98) in the rat serotonin (5HT) transporter (rSERT) to Glu (D98E) led to decreased 5HT transport capacity, diminished coupling to extracellular Na+ and Cl-, and a selective loss of antagonist potencies (cocaine, imipramine, and citalopram but not paroxetine or mazindol) with no change in 5HT Km value. D98E, which extends the acidic side chain by one carbon, affected the rank-order potency of substrate analogs for inhibition of 5HT transport, selectively increasing the potency of two analogs with shorter alkylamine side chains, gramine, and dihydroxybenzylamine. D98E also increased the efficacy of gramine relative to 5HT for inducing substrate-activated currents in Xenopus laevis oocytes, but these currents were noticeably dependent on extracellular medium acidification. I-V profiles for substrate-independent and -dependent currents indicated that the mutation selectively impacts ion permeation coupled to 5HT occupancy. The ability of the D98E mutant to modulate selective aspects of substrate recognition, to perturb ion dependence as well as modify substrate-induced currents, suggests that transmembrane domain I plays a critical role in defining the permeation pathway of biogenic amine transporters.

Atom penetration from a thin film into the substrate during sputtering by polyenergetic Ar{sup +} ion beam with mean energy of 9.4 keV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalin, B.A.; Gladkov, V.P.; Volkov, N.V.

Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar{sup +} ion bombardment of samples having thermally evaporated films of 30--50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar{sup +} ions of 9.4 keV to dose D = 1 {times} 10{sup 16}--10{sup 19} ion/cm{sup 2}. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H{sup +} and He{sup +} ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases withmore » dose linearly. This depth is more than 3--20 times deeper than the projected range of bombarding ions and recoil atoms. This is a deep action effect. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r{sub i}/r{sub m} (r{sub i} -- radius of dopant, r{sub m} -- radius target of substrate) can play a principal determining role.« less

Monoatomic and cluster beam effect on ToF-SIMS spectra of self-assembled monolayers on gold

NASA Astrophysics Data System (ADS)

Tuccitto, N.; Torrisi, V.; Delfanti, I.; Licciardello, A.

2008-12-01

Self-assembled monolayers represent well-defined systems that is a good model surface to study the effect of primary ion beams used in secondary ion mass spectrometry. The effect of polyatomic primary beams on both aliphatic and aromatic self-assembled monolayers has been studied. In particular, we analysed the variation of the relative secondary ion yield of both substrate metal-cluster (Au n-) in comparison with the molecular ions (M -) and clusters (M xAu y-) by using Bi +, Bi 3+, Bi 5+ beams. Moreover, the differences in the secondary ion generation efficiency are discussed. The main effect of the cluster beams is related to an increased formation of low-mass fragments and to the enhancement of the substrate related gold-clusters. The results show that, at variance of many other cases, the static SIMS of self-assembled monolayers does not benefit of the use of polyatomic primary ions.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Self-organized broadband light trapping in thin film amorphous silicon solar cells.

PubMed

Martella, C; Chiappe, D; Delli Veneri, P; Mercaldo, L V; Usatii, I; Buatier de Mongeot, F

2013-06-07

Nanostructured glass substrates endowed with high aspect ratio one-dimensional corrugations are prepared by defocused ion beam erosion through a self-organized gold (Au) stencil mask. The shielding action of the stencil mask is amplified by co-deposition of gold atoms during ion bombardment. The resulting glass nanostructures enable broadband anti-reflection functionality and at the same time ensure a high efficiency for diffuse light scattering (Haze). It is demonstrated that the patterned glass substrates exhibit a better photon harvesting than the flat glass substrate in p-i-n type thin film a-Si:H solar cells.

Determination of trace selenium by solid substrate-room temperature phosphorescence enhancing method based on potassium chlorate oxidizing phenyl hydrazine-1,2-dihydroxynaphthalene-3,6-disulfonic acid system.

PubMed

Liu, Jia-Ming; Cui, Xiao-Jie; Li, Lai-Ming; Fu, Geng-Min; Lin, Shao-Xian; Yang, Min-Lan; Xu, Mei-Ying; Wu, Zhi-Qun

2007-04-01

A new method for the determination of trace selenium based on solid substrate-room temperature phosphorimetry (SS-RTP) has been established. This method was based on the fact that in HCl-KCl buffer solution, potassium chlorate could oxidize phenyl hydrazine to form chloridize diazo-ion after being heated at 100 degrees C for 20 min, and then the diazo-ion reacted with 1,2-dihydroxynaphthalene-3,6-disulfonic acid to form red azo-compound which could emit strong room temperature phosphorescence (RTP) signal on filter paper. Selenium could catalyze potassium chlorate oxidizing the reaction between phenyl hydrazine and 1,2-dihydroxynaphthalene-3,6-disulfonic acid, which caused the sharp enhancement of SS-RTP. Under the optimum condition, the relationship between the phosphorescence emission intensity (DeltaIp) and the content of selenium obeyed Beer's law when the concentration of selenium is within the range of 1.60-320 fg spot-1 (or 0.0040-0.80 ng ml-1 with a sample volume of 0.4 microl). The regression equation of working curve can be expressed as DeltaIp=13.12+0.4839CSe(IV) (fg spot-1) (n=6), with correlation coefficient r=0.9991 and a detection limit of 0.28 fg spot-1 (corresponding to a concentration range of 7.0x10(-13) g ml-1 Se(IV), n=11). After 11-fold measurement, R.S.D. were 2.8 and 3.5% for the samples containing 0.0040 and 0.80 ng ml-1 of Se(IV), respectively. This accurate and sensitive method with good repeatability has been successfully applied to the determination of trace selenium in Chinese wolfberry and egg yolk with satisfactory results. The mechanism of the enhancement of phosphorescence was also discussed.

Determination of trace selenium by solid substrate-room temperature phosphorescence enhancing method based on potassium chlorate oxidizing phenyl hydrazine-1,2-dihydroxynaphthalene-3,6-disulfonic acid system

NASA Astrophysics Data System (ADS)

Liu, Jia-Ming; Cui, Xiao-Jie; Li, Lai-Ming; Fu, Geng-Min; Lin, Shao-Xian; Yang, Min-Lan; Xu, Mei-Ying; Wu, Zhi-Qun

2007-04-01

A new method for the determination of trace selenium based on solid substrate-room temperature phosphorimetry (SS-RTP) has been established. This method was based on the fact that in HCl-KCl buffer solution, potassium chlorate could oxidize phenyl hydrazine to form chloridize diazo-ion after being heated at 100 °C for 20 min, and then the diazo-ion reacted with 1,2-dihydroxynaphthalene-3,6-disulfonic acid to form red azo-compound which could emit strong room temperature phosphorescence (RTP) signal on filter paper. Selenium could catalyze potassium chlorate oxidizing the reaction between phenyl hydrazine and 1,2-dihydroxynaphthalene-3,6-disulfonic acid, which caused the sharp enhancement of SS-RTP. Under the optimum condition, the relationship between the phosphorescence emission intensity (Δ Ip) and the content of selenium obeyed Beer's law when the concentration of selenium is within the range of 1.60-320 fg spot -1 (or 0.0040-0.80 ng ml -1 with a sample volume of 0.4 μl). The regression equation of working curve can be expressed as Δ Ip = 13.12 + 0.4839 CSe(IV) (fg spot -1) ( n = 6), with correlation coefficient r = 0.9991 and a detection limit of 0.28 fg spot -1 (corresponding to a concentration range of 7.0 × 10 -13 g ml -1 Se(IV), n = 11). After 11-fold measurement, R.S.D. were 2.8 and 3.5% for the samples containing 0.0040 and 0.80 ng ml -1 of Se(IV), respectively. This accurate and sensitive method with good repeatability has been successfully applied to the determination of trace selenium in Chinese wolfberry and egg yolk with satisfactory results. The mechanism of the enhancement of phosphorescence was also discussed.

Zinc-ion-dependent acid phosphatase exhibits magnesium-ion-dependent myo-inositol-1-phosphatase activity.

PubMed

Fujimoto, S; Okano, I; Tanaka, Y; Sumida, Y; Tsuda, J; Kawakami, N; Shimohama, S

1996-06-01

We have purified bovine brain Zn(2+)-dependent acid phosphatase (Zn(2+)-APase), which requires Zn2+ ions to hydrolyze the substrate p-nitrophenyl phosphate (pNPP) in an acidic environment. The substrate specificity and metal requirement of Zn(2+)-APase at a physiological pH was also studied. The enzyme exhibited hydrolytic activity on myo-inositol-1- and -2-monophosphates, 2'-adenosine monophosphate, 2'-guanosine monophosphate, and the alpha- and beta-glycerophosphates, glucose-1-phosphate, and fructose-6-phosphate in 50 mM Tris-HCl buffer (pH 7.4) in the presence of Mg2+ ions, but not on pNPP and phosphotyrosine. Zn2+, Mn2+ and Co2+ ions were less effective for activation. Among the above substrates, myo-inositol-1-phosphate was the most susceptible to hydrolysis by the enzyme in the presence of 3 mM Mg2+ ions. The enzyme exhibited an optimum pH at around 8 for myo-inositol-1-phosphate in the presence of 3 mM Mg2+ ions. The Mg(2+)-dependent myo-inositol-1-phosphatase activity of the enzyme was significantly inhibited by Li+ ions. The Zn(2+)-dependent p-nitrophenyl phosphatase activity and Mg(2+)-dependent myo-inositol-1-phosphatase activity of the purified enzyme fraction exhibited similar behavior on Sephadex G-100 and Mono Q colomns. These findings suggest that Zn(2+)-APase also exhibits Mg(2+)-dependent myo-inositol-1-phosphatase activity under physiological conditions.

Supramolecular control of transition metal complexes in water by a hydrophobic cavity: a bio-inspired strategy.

PubMed

Bistri, Olivia; Reinaud, Olivia

2015-03-14

Supramolecular chemistry in water is a very challenging research area. In biology, water is the universal solvent where transition metal ions play major roles in molecular recognition and catalysis. In enzymes, it participates in substrate binding and/or activation in the heart of a pocket defined by the folded protein. The association of a hydrophobic cavity with a transition metal ion is thus a very appealing strategy for controlling the metal ion properties in the very competitive water solvent. Various systems based on intrinsically water-soluble macrocyclic structures such as cyclodextrins, cucurbituryls, and metallo-cages have been reported. Others use calixarenes and resorcinarenes functionalized with hydrophilic substituents. One approach for connecting a metal complex to these cavities is to graft a ligand for metal ion binding at their edge. Early work with cyclodextrins has shown Michaelis-Menten like catalysis displaying enhanced kinetics and substrate-selectivity. Remarkable examples of regio- and stereo-selective transformation of substrates have been reported as well. Dynamic two-phase systems for transition metal catalysis have also been developed. They rely on either water-transfer of the metal complex through ligand embedment or synergistic coordination of a metal ion and substrate hosting. Another strategy consists in using metallo-cages, which provide a well-defined hydrophobic space, to stabilize metal complexes in water. When the cages can host simultaneously a substrate and a reactive metal complex, size- and regio-selective catalysis was obtained. Finally, construction of a polydentate coordination site closely interlocked with a calixarene or resorcinarene macrocycle has been shown to be a very fruitful strategy for obtaining metal complexes with remarkable hosting properties. For each of these systems, the synergism resulting from the biomimetic association of a hydrophobic cavity and a metal ion is discussed within the objective of developing new tools for either selective molecular recognition (with analytical perspectives) or performant catalysis, in water.

Reaction of propane with the ordered NiO/Rh(1 1 1) studied by XPS and LEISS

NASA Astrophysics Data System (ADS)

Zhang, Hong; Wang, Wenyi; Chen, Mingshu; Wan, Huilin

2018-05-01

Nickel oxide has been reported to be an efficient catalyst for oxidative dehydrogenation of propane (ODP) to propene at low temperature. In this paper, ultrathin NiO films with various thickness were prepared on a Rh(1 1 1) surface and characterized by X-ray photoemission spectroscopy (XPS) and Low-energy ion scattering spectroscopy (LEISS). Results show that NiO forms a two-dimensional (2D) network with a O-Ni-O structure at submonolayer coverages, and a bulk-like NiO at multilayer coverages. The submonolayer NiO films are less stable than the thick ones when annealed in ultra-high vacuum (UHV) due to the strong interaction with the Rh substrate. Propane was dosed onto the model surfaces at different temperatures to investigate the activation of propane and reactivity of NiO films with propane. The reactions of propane with the thin and thick NiO films are significantly different. Propane activates on the O defect sites for the thick NiO films, whereas activation occurs on the interface of nickel oxide and substrate for the thin films with a higher activity.

Ion-ion dynamic structure factor, acoustic modes, and equation of state of two-temperature warm dense aluminum

NASA Astrophysics Data System (ADS)

Harbour, L.; Förster, G. D.; Dharma-wardana, M. W. C.; Lewis, Laurent J.

2018-04-01

The ion-ion dynamical structure factor and the equation of state of warm dense aluminum in a two-temperature quasiequilibrium state, with the electron temperature higher than the ion temperature, are investigated using molecular-dynamics simulations based on ion-ion pair potentials constructed from a neutral pseudoatom model. Such pair potentials based on density functional theory are parameter-free and depend directly on the electron temperature and indirectly on the ion temperature, enabling efficient computation of two-temperature properties. Comparison with ab initio simulations and with other average-atom calculations for equilibrium aluminum shows good agreement, justifying a study of quasiequilibrium situations. Analyzing the van Hove function, we find that ion-ion correlations vanish in a time significantly smaller than the electron-ion relaxation time so that dynamical properties have a physical meaning for the quasiequilibrium state. A significant increase in the speed of sound is predicted from the modification of the dispersion relation of the ion acoustic mode as the electron temperature is increased. The two-temperature equation of state including the free energy, internal energy, and pressure is also presented.