Controls on Weathering of Pyrrhotite in a Low-Sulfide, Granitic Mine-Waste Rock in the Canadian Arctic

NASA Astrophysics Data System (ADS)

Langman, J. B.; Holland, S.; Sinclair, S.; Blowes, D.

2013-12-01

Increased environmental risk is incurred with expansion of mineral extraction in the Arctic. A greater understanding of geochemical processes associated with hard-rock mining in this cold climate is needed to evaluate and mitigate these risks. A laboratory and in-situ experiment was conducted to examine mineral weathering and the generation of acid rock drainage in a low-sulfide, run-of-mine waste rock in an Arctic climate. Rock with different concentrations of sulfides (primarily pyrrhotite [Fe7S8] containing small amounts of Co and Ni) and carbonates were weathered in the laboratory and in-situ, large-scale test piles to examine leachate composition and mineral weathering. The relatively larger sulfide-containing rock produced sufficient acid to overcome carbonate buffering and produced a declining pH environment with concomitant release of SO4, Fe, Co, and Ni. Following carbonate consumption, aluminosilicate buffering stabilized the pH above 4 until a reduction in acid generation. Results from the laboratory experiment assisted in determining that after consumption of 1.6 percent of the total sulfide, the larger sulfide-concentration test pile likely is at an internal steady-state or maximal weathering rate after seven years of precipitation input and weathering that is controlled by an annual freeze-thaw cycle. Further weathering of the test pile should be driven by external factors of temperature and precipitation in this Arctic, semi-arid region instead of internal factors of wetting and non-equilibrium buffering. It is predicted that maximal weathering will continue until at least 20 percent of the total sulfide is consumed. Using the identified evolution of sulfide consumption in this Arctic climate, a variable rate factor can now be assessed for the possible early evolution and maximal weathering of larger scale waste-rock piles and seasonal differences because of changes in the volume of a waste-rock pile undergoing active weathering due to the freeze-thaw cycle. Such rate factors are necessary to predict acid rock drainage and implement best management practices to minimize environmental impacts. To better understand the early geochemical evolution of the waste rock, sulfide minerals from different periods in the experiments were analyzed for discrete mineral characteristics indicative of a weathered state. Element transfer from the mineral to aqueous phase is transport limited because of the formation of Fe-(oxy)hydroxide weathered rims that can be an inhibitor of dissolution. Application of various x-ray spectroscopy techniques indicated that pyrrhotite transforms to marcasite [FeS2] prior to formation of Fe(II)-(oxy)hydroxides and further to Fe(III)-hydroxide/oxides. Iron appears to migrate through the weathered rims leaving the S-rich layer behind, and oxygen likely is retarded from migrating inward with formation of Fe(III) species. As these Fe-mineral transformations occur, they influence the retention of the secondary metals such as Co and Ni that preferentially remain in the +2 oxidation state and may leave the system as hydroxides, oxides, and sulfates. Understanding mineral evolution in this climate assists in adjusting appropriate rate factors for temporal changes in element release from the weathering of the pyrrhotite.

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

NASA Astrophysics Data System (ADS)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Kinetics of Indigenous Nitrate Reducing Sulfide Oxidizing Activity in Microaerophilic Wastewater Biofilms

PubMed Central

Villahermosa, Desirée; Corzo, Alfonso; Garcia-Robledo, Emilio; González, Juan M.; Papaspyrou, Sokratis

2016-01-01

Nitrate decreases sulfide release in wastewater treatment plants (WWTP), but little is known on how it affects the microzonation and kinetics of related microbial processes within the biofilm. The effect of nitrate addition on these properties for sulfate reduction, sulfide oxidation, and oxygen respiration were studied with the use of microelectrodes in microaerophilic wastewater biofilms. Mass balance calaculations and community composition analysis were also performed. At basal WWTP conditions, the biofilm presented a double-layer system. The upper microaerophilic layer (~300 μm) showed low sulfide production (0.31 μmol cm-3 h-1) and oxygen consumption rates (0.01 μmol cm-3 h-1). The anoxic lower layer showed high sulfide production (2.7 μmol cm-3 h-1). Nitrate addition decreased net sulfide production rates, caused by an increase in sulfide oxidation rates (SOR) in the upper layer, rather than an inhibition of sulfate reducing bacteria (SRB). This suggests that the indigenous nitrate reducing-sulfide oxidizing bacteria (NR-SOB) were immediately activated by nitrate. The functional vertical structure of the biofilm changed to a triple-layer system, where the previously upper sulfide-producing layer in the absence of nitrate split into two new layers: 1) an upper sulfide-consuming layer, whose thickness is probably determined by the nitrate penetration depth within the biofilm, and 2) a middle layer producing sulfide at an even higher rate than in the absence of nitrate in some cases. Below these layers, the lower net sulfide-producing layer remained unaffected. Net SOR varied from 0.05 to 0.72 μmol cm-3 h-1 depending on nitrate and sulfate availability. Addition of low nitrate concentrations likely increased sulfate availability within the biofilm and resulted in an increase of both net sulfate reduction and net sulfide oxidation by overcoming sulfate diffusional limitation from the water phase and the strong coupling between SRB and NR-SOB syntrophic relationship. PMID:26872267

An assessment of silver copper sulfides for photovoltaic applications: theoretical and experimental insights.

PubMed

Savory, Christopher N; Ganose, Alex M; Travis, Will; Atri, Ria S; Palgrave, Robert G; Scanlon, David O

2016-08-28

As the worldwide demand for energy increases, low-cost solar cells are being looked to as a solution for the future. To attain this, non-toxic earth-abundant materials are crucial, however cell efficiencies for current materials are limited in many cases. In this article, we examine the two silver copper sulfides AgCuS and Ag 3 CuS 2 as possible solar absorbers using hybrid density functional theory, diffuse reflectance spectroscopy, XPS and Hall effect measurements. We show that both compounds demonstrate promising electronic structures and band gaps for high theoretical efficiency solar cells, based on Shockley-Queisser limits. Detailed analysis of their optical properties, however, indicates that only AgCuS should be of interest for PV applications, with a high theoretical efficiency. From this, we also calculate the band alignment of AgCuS against various buffer layers to aid in future device construction.

Membrane for hydrogen recovery from streams containing hydrogen sulfide

DOEpatents

Agarwal, Pradeep K.

2007-01-16

A membrane for hydrogen recovery from streams containing hydrogen sulfide is provided. The membrane comprises a substrate, a hydrogen permeable first membrane layer deposited on the substrate, and a second membrane layer deposited on the first layer. The second layer contains sulfides of transition metals and positioned on the on a feed side of the hydrogen sulfide stream. The present invention also includes a method for the direct decomposition of hydrogen sulfide to hydrogen and sulfur.

Rhenium and osmium isotopes in black shales and Ni-Mo-PGE-rich sulfide layers, Yukon Territory, Canada, and Hunan and Guizhou provinces, China

USGS Publications Warehouse

Horan, M.F.; Morgan, J.W.; Grauch, R.I.; Coveney, R.M.; Murowchick, J.B.; Hulbert, L.J.

1994-01-01

Rhenium and osmium abundances and osmium isotopic compositions were determined by negative thermal ionization mass spectrometry for samples of Devonian black shale and an associated Ni-enriched sulfide layer from the Yukon Territory, Canada. The same composition information was also obtained for samples of early Cambrian Ni-Mo-rich sulfide layers hosted in black shale in Guizhou and Hunan provinces, China. This study was undertaken to constrain the origin of the PGE enrichment in the sulfide layers. Samples of the Ni sulfide layer from the Yukon Territory are highly enriched in Re, Os, and other PGE, with distinctly higher Re/192Os but similar Pt/Re, compared to the black shale host. Re-Os isotopic data of the black shale and the sulfide layer are approximately isochronous, and the data plot close to reference isochrons which bracket the depositional age of the enclosing shales. Samples of the Chinese sulfide layers are also highly enriched in Re, Os, and the other PGE. Re/192Os are lower than in the Yukon sulfide layer. Re-Os isotopic data for the sulfide layers lie near a reference isochron with an age of 560 Ma, similar to the depositional age of the black shale host. The osmium isotopic data suggest that Re and PGE enrichment of the brecciated sulfide layers in both the Yukon Territory and in southern China may have occurred near the time of sediment deposition or during early diagenesis, during the middle to late Devonian and early Cambrian, respectively. ?? 1994.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides.

PubMed

Jood, Priyanka; Ohta, Michihiro

2015-03-16

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS₂-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS₂ sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

PubMed Central

Jood, Priyanka; Ohta, Michihiro

2015-01-01

Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor. PMID:28787992

Repulsive Interaction of Sulfide Layers on Compressor Impeller Blades Remanufactured Through Plasma Spray Welding

NASA Astrophysics Data System (ADS)

Chang, Y.; Zhou, D.; Wang, Y. L.; Huang, H. H.

2016-12-01

This study investigated the repulsive interaction of sulfide layers on compressor impeller blades remanufactured through plasma spray welding (PSW). Sulfide layers on the blades made of FV(520)B steel were prepared through multifarious corrosion experiments, and PSW was utilized to remanufacture blade specimens. The specimens were evaluated through optical microscopy, scanning electron microscopy, energy-dispersive spectroscopy, 3D surface topography, x-ray diffraction, ImageJ software analysis, Vicker's micro-hardness test and tensile tests. Results showed a large number of sulfide inclusions in the fusion zone generated by sulfide layers embodied into the molten pool during PSW. These sulfide inclusions seriously degraded the mechanical performance of the blades remanufactured through PSW.

Chemically Deposited Thin-Film Solar Cell Materials

NASA Technical Reports Server (NTRS)

Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

2005-01-01

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

1996-01-01

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

1996-07-30

A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

Production and Preservation of Sulfide Layering in Mercury's Magma Ocean

NASA Astrophysics Data System (ADS)

Boukare, C.-E.; Parman, S. W.; Parmentier, E. M.; Anzures, B. A.

2018-05-01

Mercury's magma ocean (MMO) would have been sulfur-rich. At some point during MMO solidification, it likely became sulfide saturated. Here we present physiochemical models exploring sulfide layer formation and stability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Biao; Zhou, Keqing; Jiang, Saihua

Highlights: • Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method. • We prepare PMMA/LZnS nanocomposites by in situ bulk polymerization of MMA. • PMMA/LZnS nanocomposites were investigated by TGA, DSC, MCC, UV–vis and PL test. • The thermal stability, flame retardant and optical properties of PMMA are improved. - Abstract: Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method and poly(methyl methacrylate) (PMMA)/layered zinc sulfide nanocomposites were obtained by in situ bulk polymerization of methyl methacrylate (MMA). X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the as-synthesized layered zinc sulfide and PMMA/layered zincmore » sulfide nanocomposites. Microscale combustion calorimeter (MCC), differential scanning calorimeter (DSC) and thermogravimetric analysis (TGA) were used to test the thermal properties of the composites. Ultraviolet visible (UV–vis) transmittance spectra and photoluminence (PL) spectra were obtained to investigate the optical properties of the composites. From the results, the thermal degradation temperature is increased by 20–50 °C, the peak of heat release rate (pHRR) and total heat release (THR) are both decreased by above 30%, and the photoluminence intensity is enhanced with the increasing loading of layered zinc sulfide.« less

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2005-10-18

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2003-09-09

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Process for thin film deposition of cadmium sulfide

DOEpatents

Muruska, H. Paul; Sansregret, Joseph L.; Young, Archie R.

1982-01-01

The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

Desulfurization apparatus and method

DOEpatents

Rong, Charles; Jiang, Rongzhong; Chu, Deryn

2013-06-18

A method and system for desulfurization comprising first and second metal oxides; a walled enclosure having an inlet and an exhaust for the passage of gas to be treated; the first and second metal oxide being combinable with hydrogen sulfide to produce a reaction comprising a sulfide and water; the first metal oxide forming a first layer and the second metal oxide forming a second layer within the walled surroundings; the first and second layers being positioned so the first layer removes the bulk amount of the hydrogen sulfide from the treated gas prior to passage through the second layer, and the second layer removes substantially all of the remaining hydrogen sulfide from the treated gas; the first metal oxide producing a stoichiometrical capacity in excess of 500 mg sulfur/gram; the second metal oxide reacts with the hydrogen sulfide more favorably but has a stoichometrical capacity which is less than the first reactant; whereby the optimal amount by weight of the first and second metal oxides is achieved by utilizing two to three units by weight of the first metal oxide for every unit of the second metal oxide.

An assessment of silver copper sulfides for photovoltaic applications: theoretical and experimental insights† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6ta03376h Click here for additional data file. Click here for additional data file.

PubMed Central

Savory, Christopher N.; Ganose, Alex M.; Travis, Will; Atri, Ria S.; Palgrave, Robert G.

2016-01-01

As the worldwide demand for energy increases, low-cost solar cells are being looked to as a solution for the future. To attain this, non-toxic earth-abundant materials are crucial, however cell efficiencies for current materials are limited in many cases. In this article, we examine the two silver copper sulfides AgCuS and Ag3CuS2 as possible solar absorbers using hybrid density functional theory, diffuse reflectance spectroscopy, XPS and Hall effect measurements. We show that both compounds demonstrate promising electronic structures and band gaps for high theoretical efficiency solar cells, based on Shockley–Queisser limits. Detailed analysis of their optical properties, however, indicates that only AgCuS should be of interest for PV applications, with a high theoretical efficiency. From this, we also calculate the band alignment of AgCuS against various buffer layers to aid in future device construction. PMID:27774149

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

Films of cadmium sulfide and cadmium telluride have been produced by screen printing and sintering. Cadmium sulfide films ten microns thick had a resistivity in the 10 ohm-cm range. A technique was developed for forming a cadmium telluride layer on top of a cadmium sulfide layer. Process control and device preparation are areas requiring further study.

Reduction and conversion of 2,4,6-trinitrotoluene (TNT) by sulfide under simulated anaerobic conditions.

PubMed

Qiao, Hua; Wang, He-ling; Feng, Hua-jun; Yao, Jun; Shen, Dong-sheng; Tang, Zhi-jian

2010-07-15

To account for the fast disappearance of TNT in anaerobic fermentative liquid, we investigated TNT (TNT(0)=50 mg/L) reduction by Na(2)S at 30+/-1 degrees C in two types of buffer systems, a phosphate buffer (PB, system A) and a CH(3)COOH-NaHCO(3) buffer (system B). The effects of pH, sulfide concentration and buffer system on the conversion and reaction rate of TNT were investigated. The effect of different variables on the conversion of TNT decreased in the following order: Na(2)S concentration>pH>buffer system. A kinetics study showed that TNT reduction by Na(2)S occurred in two stages separated by a change point. The observed rate constants of the first stage K(obs-1) were 1 order of magnitude lower than those of the second stage. The TNT conversion rate increased and the time to reach the change point became shorter with increasing Na(2)S concentration and pH. A 5-fold increase in Na(2)S concentration above the theoretical stoichiometric concentration was optimum. Observed rate constants of the first stage K(obs-1) were proportional to the hydrosulfide ion concentration and the conversion rate of TNT was greater and faster in buffer system B than in system A. 2010 Elsevier B.V. All rights reserved.

As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

USGS Publications Warehouse

Zientek, M.L.; Fries, T.L.; Vian, R.W.

1990-01-01

The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The sulfide minerals that form the reef may represent a cumulus sulfide phase that formed as the result of a magma-mixing event, achieved its high PGE contents at that time, and accumulated to form a layer. The rocks outside the reef may contain a large proportion of postcumulus sulfide minerals that formed as the last dregs of intercumulus liquids trapped in the interstitial spaces between the cumulus grains reached sulfur saturation and exsolved a sulfide liquid or precipitated a sulfide mineral. The PGE contents of these sulfides would be expected to be less than the cumulus sulfides that form the reef since they would have equilibrated with a much smaller volume of silicate liquid. Another explanation is that some of the sulfide droplets that formed as a result of the mixing event were trapped as inclusions in silicate minerals soon after they formed. This would reduce the amount of magma these sulfide droplets could equilibrate with and effectively reduce their PGE tenor. ?? 1990.

Reduced interface recombination in Cu{sub 2}ZnSnS{sub 4} solar cells with atomic layer deposition Zn{sub 1−x}Sn{sub x}O{sub y} buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Platzer-Björkman, C.; Frisk, C.; Larsen, J. K.

2015-12-14

Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells typically include a CdS buffer layer in between the CZTS and ZnO front contact. For sulfide CZTS, with a bandgap around 1.5 eV, the band alignment between CZTS and CdS is not ideal (“cliff-like”), which enhances interface recombination. In this work, we show how a Zn{sub 1−x}Sn{sub x}O{sub y} (ZTO) buffer layer can replace CdS, resulting in improved open circuit voltages (V{sub oc}) for CZTS devices. The ZTO is deposited by atomic layer deposition (ALD), with a process previously developed for Cu(In,Ga)Se{sub 2} solar cells. By varying the ALD process temperature, the position of themore » conduction band minimum of the ZTO is varied in relation to that of CZTS. A ZTO process at 95 °C is found to give higher V{sub oc} and efficiency as compared with the CdS reference devices. For a ZTO process at 120 °C, where the conduction band alignment is expected to be the same as for CdS, the V{sub oc} and efficiency is similar to the CdS reference. Further increase in conduction band minimum by lowering the deposition temperature to 80 °C shows blocking of forward current and reduced fill factor, consistent with barrier formation at the junction. Temperature-dependent current voltage analysis gives an activation energy for recombination of 1.36 eV for the best ZTO device compared with 0.98 eV for CdS. We argue that the V{sub oc} of the best ZTO devices is limited by bulk recombination, in agreement with a room temperature photoluminescence peak at around 1.3 eV for both devices, while the CdS device is limited by interface recombination.« less

ROBUST: The ROle of BUffering capacities in STabilising coastal lagoon ecosystems

NASA Astrophysics Data System (ADS)

de Wit, Rutger; Stal, Lucas J.; Lomstein, Bente Aa.; Herbert, Rodney A.; van Gemerden, Hans; Viaroli, Pierluigi; Cecherelli, Victor-Ugo; Rodríguez-Valera, Francisco; Bartoli, Marco; Giordani, Gianmarco; Azzoni, Roberta; Schaub, Bart; Welsh, David T.; Donnelly, Andrew; Cifuentes, Ana; Antón, Josefa; Finster, Kai; Nielsen, Lise B.; Pedersen, Anne-Grethe Underlien; Neubauer, Anne Turi; Colangelo, Marina A.; Heijs, Sander K.

2001-12-01

"Buffer capacities" has been defined in ecology as a holistic concept (e.g., Integration of Ecosystem Theories: A Pattern, second ed. Kluwer, Dordrecht, 1997, 388pp), but we show that it can also be worked out in mechanistic studies. Our mechanistic approach highlights that "buffering capacities" can be depleted progressively, and, therefore, we make a distinction between current and potential "buffering capacities". We have applied this concept to understand the limited "local stability" in seagrass ecosystems and their vulnerability towards structural changes into macro-algal dominated communities. We explored the following processes and studied how they confer buffering capacities to the seagrass ecosystem: (i) net autotrophy is persistent in Zostera noltii meadows where plant assimilation acts as a sink for nutrients, this contrasted with the Ulva system that shifted back and forth between net autotrophy and net heterotrophy; (ii) the Z. noltii ecosystem possesses a certain albeit rather limited capacity to modify the balance between nitrogen fixation and denitrification, i.e., it was found that in situ nitrogen fixation always exceeded denitrification; (iii) the nitrogen demand of organoheterotrophic bacteria in the sediment results in nitrogen retention of N in the sediment and hence a buffer against release of nitrogen compounds from sediments, (iv) habitat diversification in seagrass meadows provides shelter for meiofauna and hence buffering against adverse conditions, (v) sedimentary iron provides a buffer against noxious sulfide (note: bacterial sulfide production is enhanced in anoxic sediment niches by increased organic matter loading). On the other hand, in the coastal system we studied, sedimentary iron appears less important as a redox-coupled buffer system against phosphate loading. This is because most inorganic phosphate is bound to calcium rather than to iron. In addition, our studies have highlighted the importance of plant-microbe interactions in the seagrass meadows.

Thin film photovoltaic cells having increased durability and operating life and method for making same

DOEpatents

Barnett, Allen M.; Masi, James V.; Hall, Robert B.

1980-12-16

A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.

2015-07-20

Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystallinemore » II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II-VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Multi-dimensional modeling of atmospheric copper-sulfidation corrosion on non-planar substrates.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Ken Shuang

2004-11-01

This report documents the author's efforts in the deterministic modeling of copper-sulfidation corrosion on non-planar substrates such as diodes and electrical connectors. A new framework based on Goma was developed for multi-dimensional modeling of atmospheric copper-sulfidation corrosion on non-planar substrates. In this framework, the moving sulfidation front is explicitly tracked by treating the finite-element mesh as a pseudo solid with an arbitrary Lagrangian-Eulerian formulation and repeatedly performing re-meshing using CUBIT and re-mapping using MAPVAR. Three one-dimensional studies were performed for verifying the framework in asymptotic regimes. Limited model validation was also carried out by comparing computed copper-sulfide thickness with experimentalmore » data. The framework was first demonstrated in modeling one-dimensional copper sulfidation with charge separation. It was found that both the thickness of the space-charge layers and the electrical potential at the sulfidation surface decrease rapidly as the Cu{sub 2}S layer thickens initially but eventually reach equilibrium values as Cu{sub 2}S layer becomes sufficiently thick; it was also found that electroneutrality is a reasonable approximation and that the electro-migration flux may be estimated by using the equilibrium potential difference between the sulfidation and annihilation surfaces when the Cu{sub 2}S layer is sufficiently thick. The framework was then employed to model copper sulfidation in the solid-state-diffusion controlled regime (i.e. stage II sulfidation) on a prototypical diode until a continuous Cu{sub 2}S film was formed on the diode surface. The framework was also applied to model copper sulfidation on an intermittent electrical contact between a gold-plated copper pin and gold-plated copper pad; the presence of Cu{sub 2}S was found to raise the effective electrical resistance drastically. Lastly, future research needs in modeling atmospheric copper sulfidation are discussed.« less

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

NASA Technical Reports Server (NTRS)

Wang, Y. C.; Bahrami, M.

1983-01-01

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Methods for improved growth of group III nitride buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphologymore » of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).« less

Doped LZO buffer layers for laminated conductors

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

2010-03-23

A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

Alternative waste residue materials for passive in situ prevention of sulfide-mine tailings oxidation: a field evaluation.

PubMed

Nason, Peter; Johnson, Raymond H; Neuschütz, Clara; Alakangas, Lena; Öhlander, Björn

2014-02-28

Novel solutions for sulfide-mine tailings remediation were evaluated in field-scale experiments on a former tailings repository in northern Sweden. Uncovered sulfide-tailings were compared to sewage-sludge biosolid amended tailings over 2 years. An application of a 0.2m single-layer sewage-sludge amendment was unsuccessful at preventing oxygen ingress to underlying tailings. It merely slowed the sulfide-oxidation rate by 20%. In addition, sludge-derived metals (Cu, Ni, Fe, and Zn) migrated and precipitated at the tailings-to-sludge interface. By using an additional 0.6m thick fly-ash sealing layer underlying the sewage sludge layer, a solution to mitigate oxygen transport to the underlying tailings and minimize sulfide-oxidation was found. The fly-ash acted as a hardened physical barrier that prevented oxygen diffusion and provided a trap for sludge-borne metals. Nevertheless, the biosolid application hampered the application, despite the advances in the effectiveness of the fly-ash layer, as sludge-borne nitrate leached through the cover system into the underlying tailings, oxidizing pyrite. This created a 0.3m deep oxidized zone in 6-years. This study highlights that using sewage sludge in unconventional cover systems is not always a practical solution for the remediation of sulfide-bearing mine tailings to mitigate against sulfide weathering and acid rock drainage formation. Copyright © 2014 Elsevier B.V. All rights reserved.

Alternative waste residue materials for passive in situ prevention of sulfide-mine tailings oxidation: A field evaluation

USGS Publications Warehouse

Nason, Peter; Johnson, Raymond H.; Neuschutz, Clara; Alakangas, Lena; Ohlander, Bjorn

2014-01-01

Novel solutions for sulfide-mine tailings remediation were evaluated in field-scale experiments on a former tailings repository in northern Sweden. Uncovered sulfide-tailings were compared to sewage-sludge biosolid amended tailings over 2 years. An application of a 0.2 m single-layer sewage-sludge amendment was unsuccessful at preventing oxygen ingress to underlying tailings. It merely slowed the sulfide-oxidation rate by 20%. In addition, sludge-derived metals (Cu, Ni, Fe, and Zn) migrated and precipitated at the tailings-to-sludge interface. By using an additional 0.6 m thick fly-ash sealing layer underlying the sewage sludge layer, a solution to mitigate oxygen transport to the underlying tailings and minimize sulfide-oxidation was found. The fly-ash acted as a hardened physical barrier that prevented oxygen diffusion and provided a trap for sludge-borne metals. Nevertheless, the biosolid application hampered the application, despite the advances in the effectiveness of the fly-ash layer, as sludge-borne nitrate leached through the cover system into the underlying tailings, oxidizing pyrite. This created a 0.3 m deep oxidized zone in 6-years. This study highlights that using sewage sludge in unconventional cover systems is not always a practical solution for the remediation of sulfide-bearing mine tailings to mitigate against sulfide weathering and acid rock drainage formation.

Selenium speciation in Lower Cambrian Se-enriched strata in South China and its geological implications

NASA Astrophysics Data System (ADS)

Fan, Haifeng; Wen, Hanjie; Hu, Ruizhong; Zhao, Hui

2011-12-01

To understand the impact of Selenium (Se) into the biogeochemical cycle and implications for palaeo-redox environment, a sequential extraction method was utilized for samples including black shales, cherts, a Ni-Mo-Se sulfide layer, K-bentonite and phosphorite from Lower Cambrian Se-enriched strata in southern China. Seven species (water-soluble, phosphate exchangeable, base-soluble, acetic acid-soluble, sulfide/selenide associated, residual Se) and different oxidation states (selenate Se(VI), selenite Se(IV), organic Se, Se (0) and mineral Se(-II)) were determinated in this study. We found that the Ni-Mo-Se sulfide layer contained a significantly greater amount of Se(-II) associated with sulfides/selenides than those in host black shales and cherts. Furthermore, a positive correlation between the degree of sulfidation of iron (DOS) and the percentage of the sulfide/selenide-associated Se(-II) was observed for samples, which suggests the proportion of sulfide/selenide-associated Se(-II) could serve as a proxy for palaeo-redox conditions. In addition, the higher percentage of Se(IV) in K-bentonite and phosphorite was found and possibly attributed to the adsorption of Se by clay minerals, iron hydroxide surfaces and organic particles. Based on the negative correlations between the percentage of Se(IV) and that of Se(-II) in samples, we propose that the K-bentonite has been altered under the acid oxic conditions, and the most of black shale (and cherts) and the Ni-Mo-Se sulfide layer formed under the anoxic and euxinic environments, respectively. Concerning Se accumulation in the Ni-Mo-Se sulfide layer, the major mechanism can be described by (1) biotic and abiotic adsorption and further dissimilatory reduction from oxidized Se(VI) and Se(IV) to Se(-II), through elemental Se, (2) contribution of hydrothermal fluid with mineral Se(-II).

Influence of temperature and the role of chromium on the kinetics of sulfidation of 310 stainless steel

NASA Technical Reports Server (NTRS)

Rao, D. B.; Nelson, H. G.

1977-01-01

The sulfidation of 310 stainless steel was studied over the temperature range from 910 K to 1285 K. By adjusting the ratio of hydrogen sulfide, variations in sulfur potential were obtained. The effect of temperature on sulfidation was determined at three different sulfur potentials: 39/sqNm, 0.014/sqNm, and 0.00015/sqNm. All sulfide scales contained one or two surface layers in addition to a subscale. The second outer layer (OL-II), furthest from the alloy, contained primarily Fe-Ni-S. The first outer layer (OL-I), nearest the subscale, contained FE-Cr-S. The subscale consisted of sulfide inclusions in the metal matrix. At a given temperature and sulfur potential, the weight gain data obeyed the parabolic rate law after an initial transient period. The parabolic rate constants obtained at the sulfur potential of 39/sqNm did not show a break when the logarithm of the rate constant was plotted as a function of the inverse of absolute temperature. Sulfidation carried out at sulfur potentials below 0.02/sqNm, however, did show a break at 1145 K, which is termed as the transition temperature. This break was found to be associated with the changes which had occurred in the Fe:Cr ratio of OL-I. Below the transition temperature the activation energy was found to be approximately 125 kj/mole. Above the transition temperature the rate of sulfidation decreased with temperature but dependent on the Fe:Cr ratio in the iron-chromium-sulfide layers of the OL-I. A reaction mechanism consistent with the experimental results has been proposed.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

NASA Astrophysics Data System (ADS)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul H.

2016-08-31

As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing 'false-negative' results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400 degrees C) to stimulate grain growth, followed by a much thinner, low-temperature (200 degrees C) absorber deposition. At a lowermore » process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5x superior shunt resistance Rsh with smaller standard error ..sigma..Rsh. Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.« less

Photo-induced wettability of TiO{sub 2} film with Au buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam

2014-04-24

The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Yu, Zhi-nong; Zhao, Jian-jian; Xia, Fan; Lin, Ze-jiang; Zhang, Dong-pu; Leng, Jian; Xue, Wei

2011-03-01

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

NASA Astrophysics Data System (ADS)

Mughal, Maqsood Ali

Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath composition, current density, deposition time and temperature, stir rate, and electrode potential. These parameters individually and collectively exhibited significant correlation with the properties of the films. Digital imaging analysis (using fracture and buckling analysis software) of scanning electron microscope (SEM) images helped to quantify the cracks and study the defects in films. In addition, the effects of different annealing treatments (200 oC, 300 oC, and 400 oC in air) and coated-glass substrates (Mo, ITO, FTO) upon the properties of the In2S3 films were analyzed.

Geochemical modeling of arsenic sulfide oxidation kinetics in a mining environment

NASA Astrophysics Data System (ADS)

Lengke, Maggy F.; Tempel, Regina N.

2005-01-01

Arsenic sulfide (AsS (am), As 2S 3 (am), orpiment, and realgar) oxidation rates increase with increasing pH values. The rates of arsenic sulfide oxidation at higher pH values relative to those at pH˜2 are in the range of 26-4478, 3-17, 8-182, and 4-10 times for As 2S 3 (am), orpiment, AsS (am), and realgar, respectively. Numerical simulations of orpiment and realgar oxidation kinetics were conducted using the geochemical reaction path code EQ3/6 to evaluate the effects of variable DO concentrations and mineral reactivity factors on water chemistry evolution during orpiment and realgar oxidation. The results show that total As concentrations increase by ˜1.14 to 13 times and that pH values decrease by ˜0.6 to 4.2 U over a range of mineral reactivity factors from 1% to 50% after 2000 days (5.5 yr). The As release from orpiment and realgar oxidation exceeds the current U.S. National Drinking Water Standard (0.05 ppm) approximately in 200-300 days at the lowest initial dissolved oxygen concentration (3 ppm) and a reactivity factor of 1%. The results of simulations of orpiment oxidation in the presence of albite and calcite show that calcite can act as an effective buffer to the acid water produced from orpiment oxidation within relatively short periods (days/months), but the release of As continues to increase. Pyrite oxidation rates are faster than orpiment and realgar from pH 2.3 to 8; however, pyrite oxidation rates are slower than As 2S 3 (am) and AsS (am) at pH 8. The activation energies of arsenic sulfide oxidation range from 16 to 124 kJ/mol at pH˜8 and temperature 25 to 40°C, and pyrite activation energies are ˜52 to 88 kJ/mol, depending on pH and temperature range. The magnitude of activation energies for both pyrite and arsenic sulfide solids indicates that the oxidation of these minerals is dominated by surface reactions, except for As 2S 3 (am). Low activation energies of As 2S 3 (am) indicate that diffusion may be rate controlling. Limestone is commonly mixed with sulfide minerals in a mining environment to prevent acid water formation. However, the oxidation rates of arsenic sulfides increase as solution pH rises and result in a greater release of As. Furthermore, the lifetimes of carbonate minerals (i.e., calcite, aragonite, and dolomite) are much shorter than those of arsenic sulfide and silicate minerals. Thus, within a geologic frame time, carbonate minerals may not be present to act as a pH buffer for acid mine waters. Additionally, the presence of silicate minerals such as pyroxenes (wollastonite, jadeite, and spodumene) and Ca-feldspars (labradorite, anorthite, and nepheline) may not be important for buffering acid solutions because these minerals dissolve faster than and have shorter lifetimes than sulfide minerals. However, other silicate minerals such as Na and K-feldspars (albite, sanidine, and microcline), quartz, pyroxenes (augite, enstatite, diopsite, and MnSiO 3) that have much longer lifetimes than arsenic sulfide minerals may be present in a system. The results of our modeling of arsenic sulfide mineral oxidation show that these minerals potentially can release significant concentrations of dissolved As to natural waters, and the factors and mechanisms involved in arsenic sulfide oxidation warrant further study.

Buffer architecture for biaxially textured structures and method of fabricating same

DOEpatents

Norton, David P.; Park, Chan; Goyal, Amit

2004-04-06

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Thin film photovoltaic devices with a minimally conductive buffer layer

DOEpatents

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakashima, Kiichi; Sugiura, Hideo

1997-08-01

The relaxation process in InAsP/InGaAsP strained-layer superlattices (SLSs) with interfacial misfit dislocations has been investigated systematically by transmission electron microscopy (TEM) and x-ray analyses. The TEM analysis reveals that dislocations locate a little inside the buffer layer near the interface between the buffer and first well layer in the SLS. The x-ray analysis of (400) azimuthal angle dependence indicates the buffer layer has a large macroscopic tilt. Using a curve fitting analysis of various (hkl) x-ray profiles and reciprocal lattice mapping measurements, residual strain was determined quantitatively, i.e., Δa∥ and Δa⊥, in the SLS and buffer layer. These results reveal that the dislocations mainly cause lattice distortion of the buffer layer rather than relaxation of the SLS layer. The most remarkable result is that the change of a∥ is not equal to that of a⊥ in the buffer layer. This phenomenon strongly suggests that microplastic domains are generated in the buffer layer.

Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

2007-08-21

A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

DOEpatents

Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

PubMed

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Gushchina, E. V.; Konenkova, E. V.; L'vova, T. V.; Panteleev, V. N.; Shcheglov, M. P.

2018-01-01

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.

Mitigation of substrate defects in reticles using multilayer buffer layers

DOEpatents

Mirkarimi, Paul B.; Bajt, Sasa; Stearns, Daniel G.

2001-01-01

A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and by the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.

Selective Sulfidation of Lead Smelter Slag with Sulfur

NASA Astrophysics Data System (ADS)

Han, Junwei; Liu, Wei; Wang, Dawei; Jiao, Fen; Qin, Wenqing

2016-02-01

The selective sulfidation of lead smelter slag with sulfur was studied. The effects of temperature, sulfur dosage, carbon, and Na salts additions were investigated based on thermodynamic calculation. The results indicated that more than 96 pct of zinc in the slag could be converted into sulfides. Increasing temperature, sulfur dosage, or Na salts dosage was conducive to the sulfidation of the zinc oxides in the slag. High temperature and excess Na salts would result in the more consumption of carbon and sulfur. Carbon addition not only promoted the selective sulfidation but reduced the sulfur dosage and eliminated the generation of SO2. Iron oxides had a buffering role on the sulfur efficient utilization. The transformation of sphalerite to wurtzite was feasible under reducing condition at high temperature, especially above 1273 K (1000 °C). The growth of ZnS particles largely depended upon the roasting temperature. They were significantly increased when the temperature was above 1273 K (1000 °C), which was attributed to the formation of a liquid phase.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Measurement of plasma hydrogen sulfide in vivo and in vitro

PubMed Central

Shen, Xinggui; Pattillo, Christopher B.; Pardue, Sibile; Bir, Shyamal C.; Wang, Rui; Kevil, Christopher G.

2015-01-01

The gasotransmitter hydrogen sulfide is known to regulate multiple cellular functions during normal and pathophysiological states. However, a paucity of concise information exists regarding quantitative amounts of hydrogen sulfide involved in physiological and pathological responses. This is primarily due to disagreement among various methods employed to measure free hydrogen sulfide. In this article, we describe a very sensitive method of measuring the presence of H2S in plasma down to nanomolar levels, using monobromobimane (MBB). The current standard assay using methylene blue provides erroneous results that do not actually measure H2S. The method presented herein involves derivatization of sulfide with excess MBB in 100 mM Tris–HCl buffer (pH 9.5, 0.1 mM DTPA) for 30 min in 1% oxygen at room temperature. The fluorescent product sulfide-dibimane (SDB) is analyzed by RP-HPLC using an eclipse XDB-C18 (4.6×250 mm) column with gradient elution by 0.1% (v/v) trifluoroacetic acid in acetonitrile. The limit of detection for sulfide-dibimane is 2 nM and the SDB product is very stable over time, allowing batch storage and analysis. In summary, our MBB method is suitable for sensitive quantitative measurement of free hydrogen sulfide in multiple biological samples such as plasma, tissue and cell culture lysates, or media. PMID:21276849

Buffer layers for REBCO films for use in superconducting devices

DOEpatents

Goyal, Amit; Wee, Sung-Hun

2014-06-10

A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

NASA Technical Reports Server (NTRS)

Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

2016-01-01

CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

NASA Technical Reports Server (NTRS)

Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

2016-01-01

CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approx.576-867 C. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Metallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120deg triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3+, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE PAGES

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.; ...

2018-02-02

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Structure of Li5AlS4 and comparison with other lithium-containing metal sulfides

NASA Astrophysics Data System (ADS)

Lim, Hanjin; Kim, Sung-Chul; Kim, Jaegyeom; Kim, Young-Il; Kim, Seung-Joo

2018-01-01

Lithium aluminum sulfide (Li5AlS4) was synthesized by solid state reaction, and its crystal structure was characterized by ab initio structure determination on the basis of powder neutron diffraction (ND) data. Li5AlS4 was found to have monoclinic unit cell (space group, P21/m) with the lattice parameters: a = 6.8583(4) Å, b = 7.8369(4) Å, c = 6.2488(4) Å, and β = 90.333(4)°. This structure is built from a hexagonal close-packed (hcp) arrangement of sulfur atoms with a stacking sequence of …ABAB…. The hcp sulfide lattice consists of two different double-sulfide layers alternately stacked along the c-axis. Between the first pair of sulfur layers all the tetrahedral interstices (T+ and T- sites) are filled with lithium and aluminum atoms. All octahedral interstices between the second pair of sulfur layers are occupied by the remaining lithium atoms. The structure of Li5AlS4 is compared with those of various lithium-containing metal sulfides like Li2FeS2, NaLiMS2 (M = Zn, Cd), Li4GeS4, LiM‧S2 (M‧ = Al, Ga, In) and γ-Li3PS4. Each sulfide represents a specific distribution of lithium atoms in the lattice depending on how the octahedral and tetrahedral interstitial sites are filled. The low ionic conductivity of Li5AlS4 (9.7 × 10-9 S cm-1 at 323 K) relative to other sulfides may be due to the highly-ordered distribution of the lithium atoms in the layered structure and the lack of adjacent void spaces that can be used for lithium ion hopping.

Buffer layer for thin film structures

DOEpatents

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2006-10-31

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Buffer layer for thin film structures

DOEpatents

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2010-06-15

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

On buffer layers as non-reflecting computational boundaries

NASA Technical Reports Server (NTRS)

Hayder, M. Ehtesham; Turkel, Eli L.

1996-01-01

We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate.

PubMed

Zhang, Min; Guo, Zuoxing; Zhao, Liang; Yang, Shen; Zhao, Lei

2018-06-08

In 0.82 Ga 0.18 As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In 0.82 Ga 0.18 As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In 0.82 Ga 0.18 As buffer layer. By introducing the graded In x Ga 1−x As buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In 0.82 Ga 0.18 As/In 0.82 Al 0.18 As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

NASA Technical Reports Server (NTRS)

1988-01-01

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Mitigation of substrate defects in reflective reticles using sequential coating and annealing

DOEpatents

Mirkanimi, Paul B.

2002-01-01

A buffer-layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The buffer-layer is formed by either a multilayer deposited on the substrate or by a plurality of sequentially deposited and annealed coatings deposited on the substrate. The plurality of sequentially deposited and annealed coating may comprise multilayer and single layer coatings. The multilayer deposited and annealed buffer layer coatings may be of the same or different material than the reflecting coating thereafter deposited on the buffer-layer.

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

DOEpatents

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

Chemical solution deposition method of fabricating highly aligned MgO templates

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Sathyamurthy, Srivatsan [Knoxville, TN; Aytug, Tolga [Knoxville, TN; Arendt, Paul N [Los Alamos, NM; Stan, Liliana [Los Alamos, NM; Foltyn, Stephen R [Los Alamos, NM

2012-01-03

A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La.sub.2Zr.sub.2O.sub.7 or Gd.sub.2Zr.sub.2O.sub.7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

NASA Astrophysics Data System (ADS)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

Threading Dislocations in InGaAs/GaAs (001) Buffer Layers for Metamorphic High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Song, Yifei; Kujofsa, Tedi; Ayers, John E.

2018-07-01

In order to evaluate various buffer layers for metamorphic devices, threading dislocation densities have been calculated for uniform composition In x Ga1- x As device layers deposited on GaAs (001) substrates with an intermediate graded buffer layer using the L MD model, where L MD is the average length of misfit dislocations. On this basis, we compare the relative effectiveness of buffer layers with linear, exponential, and S-graded compositional profiles. In the case of a 2 μm thick buffer layer linear grading results in higher threading dislocation densities in the device layer compared to either exponential or S-grading. When exponential grading is used, lower threading dislocation densities are obtained with a smaller length constant. In the S-graded case, lower threading dislocation densities result when a smaller standard deviation parameter is used. As the buffer layer thickness is decreased from 2 μm to 0.1 μm all of the above effects are diminished, and the absolute threading dislocation densities increase.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers

NASA Astrophysics Data System (ADS)

Mensur Alkoy, Ebru; Uchiyama, Kiyoshi; Shiosaki, Tadashi; Alkoy, Sedat

2006-05-01

Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38-53 μC/cm2,2Ec=136-170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.

Rare earth zirconium oxide buffer layers on metal substrates

DOEpatents

Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

2001-01-01

A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Layered metal sulfides: Exceptionally selective agents for radioactive strontium removal

PubMed Central

Manos, Manolis J.; Ding, Nan; Kanatzidis, Mercouri G.

2008-01-01

In this article, we report the family of robust layered sulfides K2xMnxSn3-xS6 (x = 0.5–0.95) (KMS-1). These materials feature hexagonal [MnxSn3-xS6]2x− slabs of the CdI2 type and contain highly mobile K+ ions in their interlayer space that are easily exchangeable with other cations and particularly strontium. KMS-1 display outstanding preference for strontium ions in highly alkaline solutions containing extremely large excess of sodium cations as well as in acidic environment where most alternative adsorbents with oxygen ligands are nearly inactive. The implication of these results is that simple layered sulfides should be considered for the efficient remediation of certain nuclear wastes. PMID:18316731

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

DOE PAGES

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; ...

2015-04-21

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10 9 and 5 × 10 8 cm ₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, theremore » was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

Structural effects of naphthalimide-based fluorescent sensor for hydrogen sulfide and imaging in live zebrafish

NASA Astrophysics Data System (ADS)

Choi, Seon-Ae; Park, Chul Soon; Kwon, Oh Seok; Giong, Hoi-Khoanh; Lee, Jeong-Soo; Ha, Tai Hwan; Lee, Chang-Soo

2016-05-01

Hydrogen sulfide (H2S) is an important biological messenger, but few biologically-compatible methods are available for its detection in aqueous solution. Herein, we report a highly water-soluble naphthalimide-based fluorescent probe (L1), which is a highly versatile building unit that absorbs and emits at long wavelengths and is selective for hydrogen sulfide over cysteine, glutathione, and other reactive sulfur, nitrogen, and oxygen species in aqueous solution. We describe turn-on fluorescent probes based on azide group reduction on the fluorogenic ‘naphthalene’ moiety to fluorescent amines and intracellular hydrogen sulfide detection without the use of an organic solvent. L1 and L2 were synthetically modified to functional groups with comparable solubility on the N-imide site, showing a marked change in turn-on fluorescent intensity in response to hydrogen sulfide in both PBS buffer and living cells. The probes were readily employed to assess intracellular hydrogen sulfide level changes by imaging endogenous hydrogen sulfide signal in RAW264.7 cells incubated with L1 and L2. Expanding the use of L1 to complex and heterogeneous biological settings, we successfully visualized hydrogen sulfide detection in the yolk, brain and spinal cord of living zebrafish embryos, thereby providing a powerful approach for live imaging for investigating chemical signaling in complex multicellular systems.

Sulfidation of 310 stainless steel at sulfur potentials encountered in coal conversion systems

NASA Technical Reports Server (NTRS)

Rao, D. B.; Nelson, H. G.

1976-01-01

The sulfidation of SAE 310 stainless steel was carried out in gas mixtures of hydrogen and hydrogen sulfide over a range of sulfur potentials anticipated in advanced coal gasification processes. The kinetics, composition, and morphology of sulfide scale formation were studied at a fixed temperature of 1,065 K over a range of sulfur potentials from .00015 Nm to the -2nd power to 900 Nm to the -2nd power. At all sulfur potentials investigated, the sulfide scales were found to be multilayered. The relative thickness of the individual layers as well as the composition was found to depend on the sulfur potential. The reaction was found to obey the parabolic rate law after an initial transient period. Considerably longer transient periods were found to be due to unsteady state conditions resulting from compositional variations in the spinel layer. The sulfur pressure dependence on the parabolic rate constant was found to best fit the equation K sub p equals const. (P sub S2) to the 1/nth power, where n equals 3.7. The growth of the outer layers was found to be primarily due to the diffusion of metal ions, iron being the predominant species. The inner layer growth was due to the dissociation of the primary product at the alloy scale interface and depended on the activity of chromium.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-10-05

An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

Platinum-group mineralization at the margin of the Skaergaard intrusion, East Greenland

NASA Astrophysics Data System (ADS)

Andersen, Jens C. Ø.; Rollinson, Gavyn K.; McDonald, Iain; Tegner, Christian; Lesher, Charles E.

2017-08-01

Two occurrences of platinum-group elements (PGEs) along the northern margin of the Skaergaard intrusion include a sulfide-bearing gabbro with slightly less than 1 ppm PGE + Au and a clinopyroxene-actinolite-plagioclase-biotite-ilmenite schist with 16 vol% sulfide and 1.8 ppm PGE + Au. Both have assemblages of pyrrhotite, pentlandite, and chalcopyrite typical for orthomagmatic sulfides. Matching platinum-group mineral assemblages with sperrylite (PtAs2), kotulskite (Pd(Bi,Te)1-2), froodite (PdBi2), michenerite (PdBiTe), and electrum (Au,Ag) suggest a common origin. Petrological and geochemical similarities suggest that the occurrences are related to the Skaergaard intrusion. The Marginal Border Series locally displays Ni depletion consistent with sulfide fractionation, and the PGE fractionation trends of the occurrences are systematically enriched by 10-50 times over the chilled margin. The PGE can be explained by sulfide-silicate immiscibility in the Skaergaard magma with R factors of 110-220. Nickel depletion in olivine suggests that the process occurred within the host cumulate, and the low R factors require little sulfide mobility. The sulfide assemblages are different to the chalcopyrite-bornite-digenite assemblage found in the Skaergaard Layered Series and Platinova Reef. These differences can be explained by the early formation of sulfide melt, while magmatic differentiation or sulfur loss caused the unusual sulfide assemblage within the Layered Series. The PGEs indicate that the sulfides formed from the Skaergaard magma. The sulfides and PGEs could not have formed from the nearby Watkins Fjord wehrlite intrusion, which is nearly barren in sulfide. We suggest that silicate-sulfide immiscibility led to PGE concentration where the Skaergaard magma became contaminated with material from the Archean basement.

Lightweight, durable lead-acid batteries

DOEpatents

Lara-Curzio, Edgar [Lenoir City, TN; An, Ke [Knoxville, TX; Kiggans, Jr., James O.; Dudney, Nancy J [Knoxville, TN; Contescu, Cristian I [Knoxville, TN; Baker, Frederick S [Oak Ridge, TN; Armstrong, Beth L [Clinton, TN

2011-09-13

A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

Lightweight, durable lead-acid batteries

DOEpatents

Lara-Curzio, Edgar; An, Ke; Kiggans, Jr., James O; Dudney, Nancy J; Contescu, Cristian I; Baker, Frederick S; Armstrong, Beth L

2013-05-21

A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

Method of depositing buffer layers on biaxially textured metal substrates

DOEpatents

Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

2002-08-27

A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0

Tunneling Injection and Exciton Diffusion of White Organic Light-Emitting Diodes with Composed Buffer Layers

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Wu, Jian-Ping; Huang, Tao-Liang; Chung, Bin-Fong

2018-02-01

Four configurations of buffer layers were inserted into the structure of a white organic light emitting diode, and their impacts on the hole tunneling-injection and exciton diffusion processes were investigated. The insertion of a single buffer layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) resulted in a balanced carrier concentration and excellent color stability with insignificant chromaticity coordinate variations of Δ x < 0.023 and Δ y < 0.023. A device with a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) buffer layer was beneficial for hole tunneling to the emission layer, resulting in a 1.45-fold increase in current density. The tunneling of holes and the diffusion of excitons were confirmed by the preparation of a dual buffer layer of CBP:tris-(phenylpyridine)-iridine (Ir(ppy)3)/BCP. A maximum current efficiency of 12.61 cd/A with a luminance of 13,850 cd/m2 was obtained at 8 V when a device with a dual-buffer layer of CBP:6 wt.% Ir(ppy)3/BCP was prepared.

Measurement of H2S in Crude Oil and Crude Oil Headspace Using Multidimensional Gas Chromatography, Deans Switching and Sulfur-selective Detection

PubMed Central

Heshka, Nicole E.; Hager, Darcy B.

2015-01-01

A method for the analysis of dissolved hydrogen sulfide in crude oil samples is demonstrated using gas chromatography. In order to effectively eliminate interferences, a two dimensional column configuration is used, with a Deans switch employed to transfer hydrogen sulfide from the first to the second column (heart-cutting). Liquid crude samples are first separated on a dimethylpolysiloxane column, and light gases are heart-cut and further separated on a bonded porous layer open tubular (PLOT) column that is able to separate hydrogen sulfide from other light sulfur species. Hydrogen sulfide is then detected with a sulfur chemiluminescence detector, adding an additional layer of selectivity. Following separation and detection of hydrogen sulfide, the system is backflushed to remove the high-boiling hydrocarbons present in the crude samples and to preserve chromatographic integrity. Dissolved hydrogen sulfide has been quantified in liquid samples from 1.1 to 500 ppm, demonstrating wide applicability to a range of samples. The method has also been successfully applied for the analysis of gas samples from crude oil headspace and process gas bags, with measurement from 0.7 to 9,700 ppm hydrogen sulfide. PMID:26709594

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paranthaman, Mariappan Parans

We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCOmore » wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.« less

GaAs buffer layer technique for vertical nanowire growth on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaoqing, E-mail: steelxu@stanford.edu; Parizi, Kokab B.; Huo, Yijie

2014-02-24

Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surfacemore » leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.« less

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

PubMed

Song, Jie; Han, Jung

2017-03-02

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer.

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

DOEpatents

Chen, Wen S.; Stewart, John M.

1992-01-07

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Critical CuI buffer layer surface density for organic molecular crystal orientation change

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol, E-mail: drlee@ssu.ac.kr

We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low thatmore » a large proportion of the substrate surface is bare.« less

Nitrosopersulfide (SSNO(-)) accounts for sustained NO bioactivity of S-nitrosothiols following reaction with sulfide.

PubMed

Cortese-Krott, Miriam M; Fernandez, Bernadette O; Santos, José L T; Mergia, Evanthia; Grman, Marian; Nagy, Péter; Kelm, Malte; Butler, Anthony; Feelisch, Martin

2014-01-01

Sulfide salts are known to promote the release of nitric oxide (NO) from S-nitrosothiols and potentiate their vasorelaxant activity, but much of the cross-talk between hydrogen sulfide and NO is believed to occur via functional interactions of cell regulatory elements such as phosphodiesterases. Using RFL-6 cells as an NO reporter system we sought to investigate whether sulfide can also modulate nitrosothiol-mediated soluble guanylyl cyclase (sGC) activation following direct chemical interaction. We find a U-shaped dose response relationship where low sulfide concentrations attenuate sGC stimulation by S-nitrosopenicillamine (SNAP) and cyclic GMP levels are restored at equimolar ratios. Similar results are observed when intracellular sulfide levels are raised by pre-incubation with the sulfide donor, GYY4137. The outcome of direct sulfide/nitrosothiol interactions also critically depends on molar reactant ratios and is accompanied by oxygen consumption. With sulfide in excess, a 'yellow compound' accumulates that is indistinguishable from the product of solid-phase transnitrosation of either hydrosulfide or hydrodisulfide and assigned to be nitrosopersulfide (perthionitrite, SSNO(-); λ max 412 nm in aqueous buffers, pH 7.4; 448 nm in DMF). Time-resolved chemiluminescence and UV-visible spectroscopy analyses suggest that its generation is preceded by formation of the short-lived NO-donor, thionitrite (SNO(-)). In contrast to the latter, SSNO(-) is rather stable at physiological pH and generates both NO and polysulfides on decomposition, resulting in sustained potentiation of SNAP-induced sGC stimulation. Thus, sulfide reacts with nitrosothiols to form multiple bioactive products; SSNO(-) rather than SNO(-) may account for some of the longer-lived effects of nitrosothiols and contribute to sulfide and NO signaling.

Contribution of ion beam analysis methods to the development of second generation high temperature superconducting wires

NASA Astrophysics Data System (ADS)

Usov, I. O.; Arendt, P. N.; Foltyn, S. R.; Stan, L.; DePaula, R. F.; Holesinger, T. G.

2010-06-01

One of the crucial steps in the second generation high temperature superconducting wire program was development of the buffer-layer architecture. The architecture designed at the Superconductivity Technology Center at Los Alamos National Laboratory consists of several oxide layers wherein each layer plays a specific role, namely: nucleation layer, diffusion barrier, biaxially textured template, and intermediate layer providing a suitable lattice match to the superconducting Y 1Ba 2Cu 3O 7 (YBCO) compound. This report demonstrates how a wide range of ion beam analysis techniques (SIMS, RBS, channeling, PIXE, PIGE, NRA and ERD) was employed for analysis of each buffer layer and the YBCO film. These results assisted in understanding of a variety of physical processes occurring during the buffer layer fabrication and helped to optimize the buffer-layer architecture as a whole.

Modified band alignment effect in ZnO/Cu2O heterojunction solar cells via Cs2O buffer insertion

NASA Astrophysics Data System (ADS)

Eom, Kiryung; Lee, Dongyoon; Kim, Seunghwan; Seo, Hyungtak

2018-02-01

The effects of a complex buffer layer of cesium oxide (Cs2O) on the photocurrent response in oxide heterojunction solar cells (HSCs) were investigated. A p-n junction oxide HSC was fabricated using p-type copper (I) oxide (Cu2O) and n-type zinc oxide (ZnO); the buffer layer was inserted between the Cu2O and fluorine-doped tin oxide (FTO). Ultraviolet-visible (UV-vis) and x-ray and ultraviolet photoelectron spectroscopy analyses were performed to characterize the electronic band structures of cells, both with and without this buffer layer. In conjunction with the measured band electronic structures, the significantly improved visible-range photocurrent spectra of the buffer-inserted HSC were analyzed in-depth. As a result, the 1 sun power conversion efficiency was increased by about three times by the insertion of buffer layer. The physicochemical origin of the photocurrent enhancement was mainly ascribed to the increased photocarrier density in the buffer layer and modified valence band offset to promote the effective hole transfer at the interface to FTO on the band-alignment model.

In Situ Determination of Sulfide Turnover Rates in a Meromictic Alpine Lake

PubMed Central

Lüthy, Lucas; Fritz, Markus; Bachofen, Reinhard

2000-01-01

A push-pull method, previously used in groundwater analyses, was successfully adapted for measuring sulfide turnover rates in situ at different depths in the meromictic Lake Cadagno. In the layer of phototrophic bacteria at about 12 m in depth net sulfide consumption was observed during the day, indicating active bacterial photosynthesis. During the night the sulfide turnover rates were positive, indicating a net sulfide production from the reduction of more-oxidized sulfur compounds. Because of lack of light, no photosynthesis takes place in the monimolimnion; thus, only sulfide formation is observed both during the day and the night. Sulfide turnover rates in the oxic mixolimnion were always positive as sulfide is spontaneously oxidized by oxygen and as the rates of sulfide oxidation depend on the oxygen concentrations present. Sulfide oxidation by chemolithotrophic bacteria may occur at the oxicline, but this cannot be distinguished from spontaneous chemical oxidation. PMID:10653740

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Semiconductor films on flexible iridium substrates

DOEpatents

Goyal, Amit

2005-03-29

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2017-09-26

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer andmore » the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10 8 cm -2 range.« less

Long life hydrocarbon conversion catalyst and method of making

DOEpatents

Tonkovich, Anna Lee Y [Pasco, WA; Wang, Yong [Richland, WA; Gao, Yufei [Kennewick, WA

2002-11-12

The present invention includes a catalyst that has at least four layers, (1) porous support, (2) buffer layer, (3) interfacial layer, and optionally (4) catalyst layer. The buffer layer provides a transition of thermal expansion coefficient from the porous support to the interfacial layer thereby reducing thermal expansion stress as the catalyst is heated to high operating temperatures. The method of the present invention for making the at least three layer catalyst has the steps of (1) selecting a porous support, (2) solution depositing an interfacial layer thereon, and optionally (3) depositing a catalyst material onto the interfacial layer; wherein the improvement comprises (4) depositing a buffer layer between the porous support and the interfacial layer.

Sulfide minerals as new Sm-Nd geochronometers for ore genesis dating of mafic-ultramafic layered intrusions

NASA Astrophysics Data System (ADS)

Serov, Pavel; Ekimova, Nadezhda; Bayanova, Tamara

2014-05-01

The main method of dating the ore process was the Re-Os method of sulfides (Luck, Allegre, 1983; Walker et. al., 1991). However, studies of Re-Os systematics of sulfide minerals do not always give the correct ages and showing the disturbances of the Re-Os systematics. At the same time, Sm-Nd age of sulfides in good agreement with the U-Pb dating on zircon and baddeleyite and suggests that the Sm-Nd system of sulfides is more resistant to secondary alteration processes. Our studies have shown that along with rock-forming, ore minerals (sulfides) can be used to determine the ore genesis time of industrially important geological sites, since exactly with the sulfides the industry Pt-Pd mineralization is closely connected. The Sm-Nd investigations steadily employ new minerals-geochronometers. Of these, sulfides of PGE-bearing layered intrusions are quite important in terms of dating the process of ore origin. Studying the REE distribution in the sulfides of MOR hydrothermal sources has shown possible REE presence in the sulfide lattice (Rimskaya-Korsakova et. al., 2003). These are difficult to carry out because the concentrations of Sm and Nd isotopes in sulfides are much lower than chondrites (Rimskaya-Korsakova et. al., 2003). For the first time in Russia with sulfide and rock-forming minerals and WR in Sm-Nd method have been dated impregnated and brecciform ores of the following objects: Pilguyarvi Cu-Ni deposits, Pechenga (1965±87 Ma); impregnated (2433±83 Ma) and redeposited (1903±24 Ma) ores of Ahmavaara intrusion (Finland); ore gabbronorites of Penikat PGE-bearing layered intrusion (2426±38 Ma (Ekimova et.al., 2011); Pt-Pd gabbro-pegmatite ores (2476± 41 Ma, which agrees with the U-Pb zircon age - 2470±9 Ma (Bayanova, 2004) and gabbronorites (2483±86 Ma) of PGE Kievei deposit and Fedorova Tundra metagabbroids (2494±54 Ma); Monchetundra gabbronorites - 2489±49 Ma. In (Kong et. al., 2000) sulfides from two metamorphosed chondrites studied by instrumental neutron activation analysis (INAA) and ion probe. As shown, the level of REE in the sulfide phase determined by the ion probe is quite similar to that obtained by INAA. Although the concentrations of REE in the enstatite and the Fe, Si, Cr-rich inclusions are comparable to those in sulfide, estimates based on mass balance calculations show that the silicate inclusions would not noticeably contribute to the REE budget in sulfides (Kong et. al., 2000). These studies were supported by the RFBR 13-05-00493, OFI-M 13-05-12055, State Earth Division Program #4 and IGCP-599.

Enhanced adhesion for LIGA microfabrication by using a buffer layer

DOEpatents

Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

2004-01-27

The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

Enhanced adhesion for LIGA microfabrication by using a buffer layer

DOEpatents

Bajikar, Sateesh S.; De Carlo, Francesco; Song, Joshua J.

2001-01-01

The present invention is an improvement on the LIGA microfabrication process wherein a buffer layer is applied to the upper or working surface of a substrate prior to the placement of a resist onto the surface of the substrate. The buffer layer is made from an inert low-Z material (low atomic weight), a material that absorbs secondary X-rays emissions from the substrate that are generated from the substrate upon exposure to a primary X-rays source. Suitable materials for the buffer layer include polyamides and polyimide. The preferred polyimide is synthesized form pyromellitic anhydride and oxydianiline (PMDA-ODA).

Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers

NASA Astrophysics Data System (ADS)

Tu, Ru-Chin; Su, Yan-Kuin; Huang, Ying-Sheng; Chen, Giin-Sang; Chou, Shu-Tsun

1998-09-01

Detailed structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinementheterostructures (SCH) grown on ZnSe, ZnSe/ZnSSe strained-layer superlattices (SLS),and GaAs buffer layers at the II VI/GaAs interface have been carried out by employingtransmission electron microscopy, variable temperature photoluminescence (PL), andcontactless electroreflectance (CER) measurements. A significant improvement onthe defect reduction and the optical quality has been observed by using either theZnSe/ZnSSe SLS or GaAs as the buffer layers when compared to that of the sample usingonly ZnSe as the buffer layer. However, the sample grown with the SLS buffer layersreveals a room temperature PL intensity higher than that of the sample grown witha GaAs buffer layer, which may still suffer from the great ionic differences betweenthe II V and III V atoms. Using 15 K CER spectra, we have also studied variousexcitonic transitions originating from strained Zn0.80Cd0.20Se/ZnSe single quantumwell in SCH with different buffer layers. An analysis of the CER spectra has ledto the identification of various excitonic transitions, mnH (L), between the mthconduction band state and the nth heavy (light)-hole band state. An excellentagreement between experiments and theoretical calculations based on the envelopefunction approximation model has been achieved.

Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, S.; Ma, B.; Narayanan, M.

2012-01-01

Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 xmore » 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.« less

Quantitative determination of polysulfide in albumins, plasma proteins and biological fluid samples using a novel combined assays approach.

PubMed

Ikeda, Mayumi; Ishima, Yu; Shibata, Akitomo; Chuang, Victor T G; Sawa, Tomohiro; Ihara, Hideshi; Watanabe, Hiroshi; Xian, Ming; Ouchi, Yuya; Shimizu, Taro; Ando, Hidenori; Ukawa, Masami; Ishida, Tatsuhiro; Akaike, Takaaki; Otagiri, Masaki; Maruyama, Toru

2017-05-29

Hydrogen sulfide (H 2 S) signaling involves polysulfide (RSS n SR') formation on various proteins. However, the current lack of sensitive polysulfide detection assays poses methodological challenges for understanding sulfane sulfur homeostasis and signaling. We developed a novel combined assay by modifying Sulfide Antioxidant Buffer (SAOB) to produce an "Elimination Method of Sulfide from Polysulfide" (EMSP) treatment solution that liberates sulfide, followed with methylene blue (MB) sulfide detection assay. The combined EMSP-MB sulfide detection assay performed on low molecular weight sulfur species showed that sulfide was produced from trisulfide compounds such as glutathione trisulfide and diallyl trisulfide, but not from the thiol compounds such as cysteine, cystine and glutathione. In the case of plasma proteins, this novel combined detection assay revealed that approximately 14.7, 1.7, 3.9, 3.7 sulfide mol/mol released from human serum albumin, α 1 -anti-trypsin, α 1 -acid glycoprotein and ovalbumin, respectively, suggesting that serum albumin is a major pool of polysulfide in human blood circulation. Taken together with the results of albumins of different species, the liberated sulfide has a good correlation with cysteine instead of methionine, indicating the site of incorporation of polysulfide is cysteine. With this novel sulfide detention assay, approximately 8,000, 120 and 1100 μM of polysulfide concentrations was quantitated in human healthy plasma, saliva and tear, respectively. Our promising polysulfide specific detection assay can be a very important tool because quantitative determination of polysulfide sheds light on the functional consequence of protein-bound cysteine polysulfide and expands the research area of reactive oxygen to reactive polysulfide species. Copyright © 2017 Elsevier B.V. All rights reserved.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Low-Cd CIGS solar cells made with a hybrid CdS/Zn(O,S) buffer layer

DOE PAGES

Garris, Rebekah L.; Mansfield, Lorelle M.; Egaas, Brian; ...

2016-10-27

In Cu(In,Ga)Se2 (CIGS) solar cells, CdS and Zn(O,S) buffer layers were compared with a hybrid buffer layer consisting of thin CdS followed Zn(O,S). We explore the physics of this hybrid layer that combines the standard (Cd) approach with the alternative (Zn) approach in the pursuit to unlock further potential for CIGS technology. CdS buffer development has shown optimal interface properties, whereas Zn(O,S) buffer development has shown increased photocurrent. Although a totally Cd-free solar module is more marketable, the retention of a small amount of Cd can be beneficial to achieve optimum junction properties. As long as the amount of Cdmore » is reduced to less than 0.01% by weight, the presence of Cd does not violate the hazardous substance restrictions of the European Union (EU). We estimate the amount of Cd allowed in the EU for CIGS on both glass and stainless steel substrates, and we show that reducing Cd becomes increasingly important as substrate weights decrease. As a result, this hybrid buffer layer had reduced Cd content and a wider space charge region, while achieving equal or better solar cell performance than buffer layers of either CdS or Zn(O,S) alone.« less

40 CFR Appendix A to Part 425 - Potassium Ferricyanide Titration Method

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 30 2014-07-01 2014-07-01 false Potassium Ferricyanide Titration..., App. A Appendix A to Part 425—Potassium Ferricyanide Titration Method Source The potassium... buffered sulfide solution is titrated with standard potassium ferricyanide solution in the presence of a...

40 CFR Appendix A to Part 425 - Potassium Ferricyanide Titration Method

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 31 2013-07-01 2013-07-01 false Potassium Ferricyanide Titration..., App. A Appendix A to Part 425—Potassium Ferricyanide Titration Method Source The potassium... buffered sulfide solution is titrated with standard potassium ferricyanide solution in the presence of a...

The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

NASA Astrophysics Data System (ADS)

Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

2016-05-01

Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00465b

High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

NASA Astrophysics Data System (ADS)

Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

2018-05-01

To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

Oxidative Remobilization of Technetium Sequestered by Sulfide-Transformed Nano Zerovalent Iron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Dimin; Anitori, Roberto; Tebo, Bradley M.

2014-06-02

The dissolution of Tc(IV) sulfide and concurrent transformation of sulfidated ZVI during 2 oxidation were examined. Kinetic data obtained with 10 mL batch reactors showed that Tc(VII) 3 reduced by sulfidated nZVI has significantly slower reoxidation rates than Tc(VII) reduced by 4 nZVI only. In a 50 mL batch reactor, initial inhibition of Tc(IV) dissolution was apparent and 5 lasted until 120 hours at S/Fe = 0.112, presumably due to the redox buffer capacity of FeS. This 6 is evidenced by the parallel trends in oxidation-reduction potentials (ORP) and Tc dissolution 7 kinetics. Mӧssbauer spectra and micro X-ray diffraction ofmore » S/Fe = 0.112 suggested the 8 persistence of FeS after 24-h oxidation although X-ray photoelectron spectroscopy indicated 9 substantial surface oxidation. After 120-h oxidation, all characterizations showed complete 10 oxidation of FeS, which further indicates that FeS inhibits Tc oxidation. X-ray absorption 11 spectroscopy for S/Fe = 0.011 showed significantly increasing percentage of TcS2 in the solid 12 phase after 24-h oxidation, indicating TcS2 is more resistant to oxidation than TcO2. At S/Fe = 13 0.112, the XAS results revealed significant transformation of Tc speciation from TcS2 to TcO2 14 after 120-h oxidation at S/Fe = 0.112. Given that no apparent Tc dissolution occurred during this 15 period, the speciation transformation might play a secondary role in hindering Tc oxidation, 16 especially as redox buffer capacity approached depletion.« less

Passivation Of High-Temperature Superconductors

NASA Technical Reports Server (NTRS)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

Antisite occupation induced single anionic redox chemistry and structural stabilization of layered sodium chromium sulfide

DOE PAGES

Shadike, Zulipiya; Zhou, Yong -Ning; Chen, Lan -Li; ...

2017-08-30

The intercalation compounds with various electrochemically active or inactive elements in the layered structure have been the subject of increasing interest due to their high capacities, good reversibility, simple structures and ease of synthesis. However, their reversible intercalation/deintercalation redox chemistries in all previous compounds involve a single cationic redox reaction or a cumulative cationic and anionic redox reaction. Here we report an anionic redox only chemistry and structural stabilization of layered sodium chromium sulfide. It is discovered that sulfur in sodium chromium sulfide is electrochemical active undergoing oxidation/reduction of sulfur rather than chromium. Significantly, sodium ions can successfully move outmore » and into without changing its lattice parameter c, which is explained in terms of the occurrence of chromium/sodium vacancy antisite during desodiation and sodiation processes. Here, our present work not only enriches the electrochemistry of layered intercalation compounds, but also extends the scope of investigation on high-capacity electrodes.« less

Antisite occupation induced single anionic redox chemistry and structural stabilization of layered sodium chromium sulfide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shadike, Zulipiya; Zhou, Yong -Ning; Chen, Lan -Li

The intercalation compounds with various electrochemically active or inactive elements in the layered structure have been the subject of increasing interest due to their high capacities, good reversibility, simple structures and ease of synthesis. However, their reversible intercalation/deintercalation redox chemistries in all previous compounds involve a single cationic redox reaction or a cumulative cationic and anionic redox reaction. Here we report an anionic redox only chemistry and structural stabilization of layered sodium chromium sulfide. It is discovered that sulfur in sodium chromium sulfide is electrochemical active undergoing oxidation/reduction of sulfur rather than chromium. Significantly, sodium ions can successfully move outmore » and into without changing its lattice parameter c, which is explained in terms of the occurrence of chromium/sodium vacancy antisite during desodiation and sodiation processes. Here, our present work not only enriches the electrochemistry of layered intercalation compounds, but also extends the scope of investigation on high-capacity electrodes.« less

Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber

PubMed Central

2014-01-01

Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte. PMID:25411566

Cooptimization of Adhesion and Power Conversion Efficiency of Organic Solar Cells by Controlling Surface Energy of Buffer Layers.

PubMed

Lee, Inhwa; Noh, Jonghyeon; Lee, Jung-Yong; Kim, Taek-Soo

2017-10-25

Here, we demonstrate the cooptimization of the interfacial fracture energy and power conversion efficiency (PCE) of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT)-based organic solar cells (OSCs) by surface treatments of the buffer layer. The investigated surface treatments of the buffer layer simultaneously changed the crack path and interfacial fracture energy of OSCs under mechanical stress and the work function of the buffer layer. To investigate the effects of surface treatments, the work of adhesion values were calculated and matched with the experimental results based on the Owens-Wendt model. Subsequently, we fabricated OSCs on surface-treated buffer layers. In particular, ZnO layers treated with poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) simultaneously satisfied the high mechanical reliability and PCE of OSCs by achieving high work of adhesion and optimized work function.

Laminate article

DOEpatents

Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

2002-01-01

A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0

The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

NASA Astrophysics Data System (ADS)

Shubina, K. Yu; Pirogov, E. V.; Mizerov, A. M.; Nikitina, E. V.; Bouravleuv, A. D.

2018-03-01

The effects of GaN nanocolumn arrays and a thin SixNy layer, used as buffer layers, on the morphology of GaN epitaxial layers are investigated. Two types of samples with different buffer layers were synthesized by PA-MBE. The morphology of the samples was characterized by SEM. The crystalline quality of the samples was assessed by XRD. The possibility of synthesis of continuous crystalline GaN layers on Si(111) substrates without the addition of other materials such as aluminum nitride was demonstrated.

Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

DOEpatents

Hankins, Matthew G [Albuquerque, NM

2009-10-06

Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

Method for producing chemical energy

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2004-09-21

Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Energetic powder

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2003-12-23

Fluoroalkylsilane-coated metal particles. The particles have a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer. The particles may be prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Cuprous selenide and sulfide form improved photovoltaic barriers

NASA Technical Reports Server (NTRS)

1966-01-01

Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable. The stability of these barrier materials is significantly greater than that of cuprous iodide.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp; AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków; Nozaki, Takayuki

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes inmore » the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.« less

Redox processes as revealed by voltammetry in the surface sediments of the Gotland Basin, Baltic Sea

NASA Astrophysics Data System (ADS)

Yücel, Mustafa; Dale, Andy; Sommer, Stefan; Pfannkuche, Olaf

2014-05-01

Sulfur cycling in marine sediments undergoes dramatic changes with changing redox conditions of the overlying waters. The upper sediments of the anoxic Gotland Basin, central Baltic Sea represent a dynamic redox environment with extensive mats of sulfide oxidizing bacteria covering the seafloor beneath the chemocline. In order to investigate sulfur redox cycling at the sediment-water interface, sediment cores were sampled over a transect covering 65 - 174 m water depth in August-September 2013. High resolution (0.25 mm minimum) vertical microprofiles of electroactive redox species including dissolved sulfide and iron were obtained with solid state Au-Hg voltammetric microelectrodes. This approach enabled a fine-scale comparison of porewater profiles across the basin. The steepest sulfide gradients (i.e. the highest sulfide consumption) occurred within the upper 10 mm in sediments covered by surficial mats (2.10 to 3.08 mmol m-2 day-1). In sediments under permanently anoxic waters (>140m), voltammetric signals for Fe(II) and aqueous FeS were detected below a subsurface maximum in dissolved sulfide, indicating a Fe flux originating from older, deeper sedimentary layers. Our results point to a unique sulfur cycling in the Gotland basin seafloor where sulfide accumulation is moderated by sulfide oxidation at the sediment surface and by FeS precipitation in deeper sediment layers. These processes may play an important role in minimizing benthic sulfide fluxes to bottom waters around the major basins of the Baltic Sea.

Laminate articles on biaxially textured metal substrates

DOEpatents

Beach, David B.; Morrell, Jonathan S.; Paranthaman, Mariappan; Chirayil, Thomas; Specht, Eliot D.; Goyal, Amit

2003-12-16

A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0

The Anarraaq Zn-Pb-Ag and barite deposit, northern Alaska: Evidence for replacement of carbonate by barite and sulfides

USGS Publications Warehouse

Kelley, K.D.; Dumoulin, Julie A.; Jennings, S.

2004-01-01

The Anarraaq deposit in northern Alaska consists of a barite body, estimated to be as much as 1 billion metric tons, and a Zn-Pb-Ag massive sulfide zone with an estimated resource of about 18 Mt at 18 percent Zn, 5.4 percent Pb, and 85 g/t Ag. The barite and sulfide minerals are hosted by the uppermost part of the Mississippian Kuna Formation (Ikalukrok unit) that consists of carbonaceous and siliceous mudstone or shale interbedded with carbonate. The amount of interbedded carbonate in the Anarraaq deposit is atypical of the district as a whole, comprising as much as one third of the section. The total thickness of the Ikalukrok unit is considerably greater in the area of the deposit (210 to almost 350 m) than to the north and south (maximum of 164 m). The mineralized zone at Anarraaq is lens shaped and has a relatively flat top and a convex base. It also ranges greatly in thickness, from a few meters to more than 100 m. Textures of some of the carbonate layers are distinctive, consisting of nodules within siliceous mudstone or layers interbedded with shale. Many of the layers contain calcitized sponge spicules or radiolarians in a carbonate matrix. Textures of barite and sulfide minerals mimic those of carbonate and provide unequivocal evidence that replacement of precursor carbonate was an important process. Barite and sulfide textures include either nodular, bladed grains of various sizes that resemble spicules (observed only with iron sulfides) or well-rounded forms that are replaced radiolarians. Mineralization at Anarraaq probably occurred in a fault-bounded Carboniferous basin during early diagenesis in the shallow subsurface. The shape and size of the mineralized body suggest that barite and sulfides replaced calcareous mass flow deposits in a submarine channel. The distribution of biogenic and/or early diagenetic silica may have served as impermeable barriers to the fluids, thereby focusing and controlling fluid flow through unreplaced carbonate layers. ?? 2004 by Economic Geology.

Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Seokki; Choi, Moonseok; Kim, Dohyung

2015-01-12

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

40 CFR Appendix B to Part 425 - Modified Monier-Williams Method

Code of Federal Regulations, 2014 CFR

2014-07-01

... is removed by scrubbing the nitrogen gas stream in a pH 7 buffer solution. The sulfide gas is collected by passage through an alkaline hydrogen peroxide scrubbing solution in which it is oxidized to sulfate. Sulfate concentration in the scrubbing solution is determined by either EPA gravimetric test...

40 CFR Appendix B to Part 425 - Modified Monier-Williams Method

Code of Federal Regulations, 2013 CFR

2013-07-01

... is removed by scrubbing the nitrogen gas stream in a pH 7 buffer solution. The sulfide gas is collected by passage through an alkaline hydrogen peroxide scrubbing solution in which it is oxidized to sulfate. Sulfate concentration in the scrubbing solution is determined by either EPA gravimetric test...

The reactions of cobalt, iron and nickel in SO2 atmospheres Similarities and differences

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Worrell, W. L.

1985-01-01

The reactions of cobalt, iron and nickel in SO2 atmospheres are reviewed and compared. A mixed oxide-sulfide product layer is observed in all cases. Cobalt and nickel exhibit similar behavior. The observed rates are near the sulfidation rates, and the reaction rate is strongly influenced by the outward diffusion of metal through an interconnected sulfide network. A continuous interconnected sulfide is not observed in the oxide-sulfide scales formed on iron, and the reaction rates are more difficult to summarize. The differences and similarities among the three metals are explained in terms of the absence of scale-gas equilibrium and the ratio of the metal diffusivity in the corresponding oxide and sulfide.

The reactions of cobalt, iron and nickel in SO-2 atmospheres: Similarities and differences

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Worrell, W. L.

1984-01-01

The reactions of cobalt, iron and nickel in SO2 atmospheres are reviewed and compared. A mixed oxide-sulfide product layer is observed in all cases. Cobalt and nickel exhibits similar behavior. The observed rates are near the sulfidation rates, and the reaction rate is strongly influenced by the outward diffusion of metal through an interconnected sulfide network. A continuous interconnected sulfide is not observed in the oxide-sulfide scales formed on iron, and the reaction rates are more difficult to summarize. The differences and similarities among the three metals are explained in terms of the absence of scale-gas equilibrium and the ratio of the metal diffusivity in the corresponding oxide and sulfide.

Changes in iron, sulfur, and arsenic speciation associated with bacterial sulfate reduction in ferrihydrite-rich systems.

PubMed

Saalfield, Samantha L; Bostick, Benjamin C

2009-12-01

Biologically mediated redox processes have been shown to affect the mobility of iron oxide-bound arsenic in reducing aquifers. This work investigates how dissimilatory sulfate reduction and secondary iron reduction affect sulfur, iron, and arsenic speciation. Incubation experiments were conducted with As(III/V)-bearing ferrihydrite in carbonate-buffered artificial groundwater enriched with lactate (10 mM) and sulfate (0.08-10 mM) and inoculated with Desulfovibrio vulgaris (ATCC 7757, formerly D. desulfuricans), which reduces sulfate but not iron or arsenic. Sulfidization of ferrihydrite led to formation of magnetite, elemental sulfur, and trace iron sulfides. Observed reaction rates imply that the majority of sulfide is recycled to sulfate, promoting microbial sulfate reduction in low-sulfate systems. Despite dramatic changes in Fe and S speciation, and minimal formation of Fe or As sulfides, most As remained in the solid phase. Arsenic was not solubilized in As(V)-loaded incubations, which experienced slow As reduction by sulfide, whereas As(III)-loaded incubations showed limited and transient As release associated with iron remineralization. This suggests that As(III) production is critical to As release under reducing conditions, with sulfate reduction alone unlikely to release As. These data also suggest that bacterial reduction of As(V) is necessary for As sequestration in sulfides, even where sulfate reduction is active.

Method of depositing epitaxial layers on a substrate

DOEpatents

Goyal, Amit

2003-12-30

An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

NASA Astrophysics Data System (ADS)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

The effect of the carbon nanotube buffer layer on the performance of a Li metal battery.

PubMed

Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

2016-06-07

Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.

Ore genesis dating: implication of Sm-Nd method using sulfide minerals for mafic-ultramafic layered intrusions of Fennoscandian Shield

NASA Astrophysics Data System (ADS)

Serov, Pavel; Bayanova, Tamara; Steshenko, Ekaterina; Ekimova, Nadezhda

2015-04-01

The main method of dating the ore process was the Re-Os method of sulfides (Luck, Allegre, 1983; Walker et. al., 1991). However, studies of Re-Os systematics of sulfide minerals do not always give the correct ages and showing the disturbances of the Re-Os systematics. At the same time, Sm-Nd age of sulfides in good agreement with the U-Pb dating on zircon and baddeleyite and suggests that the Sm-Nd system of sulfides is more resistant to secondary alteration processes. Our studies have shown that along with rock-forming, ore minerals (sulfides) can be used to determine the ore genesis time of industrially important geological sites, since exactly with the sulfides the industry Pt-Pd mineralization is closely connected. In to Sm-Nd measurements steadily introduce new minerals-geochronometers (i.e. titanite, burbancite, eudialite etc.). Of these, sulfides of PGE-bearing layered intrusions are quite important in terms of dating the process of ore origin. Studying the REE distribution in the sulfides of MOR hydrothermal sources has shown possible REE presence in the sulfide lattice (Rimskaya-Korsakova et. al., 2003). These are difficult to carry out because the concentrations of Sm and Nd isotopes in sulfides are much lower than those in chondrites (Rimskaya-Korsakova et. al., 2003). In (Kong et. al., 2000) sulfides from two metamorphosed chondrites were studied by instrumental neutron activation analysis (INAA) and ion probe. As shown, the level of REE in the sulfide phase determined by the ion probe is quite similar to that obtained by INAA. Although the concentrations of REE in the enstatite and the Fe, Si, Cr-rich inclusions are comparable to those in sulfide, estimates based on mass balance calculations show that the silicate inclusions would not noticeably contribute to the REE budget in sulfides (Kong et. al., 2000). For the first time in Russian geochemistry laboratories using sulfide and rock-forming minerals and WR in Sm-Nd method have been dated impregnated and brecciform ores of the following objects - Pilguyarvi Cu-Ni deposits, Pechenga (1965±87 Ma); impregnated (2433±83 Ma) and redeposited (1903±24 Ma) ores of Ahmavaara intrusion (Finland); Kolvitsa massif metagabbro (1990±92 Ma, which reflect the age of Sm-Nd system closure in sulfide minerals); olivine orthopyroxenites of Sopcha 'Ore bed' (2442±59 Ma); ore gabbronorites of Penikat PGE-bearing layered intrusion (2426±38 Ma (Ekimova et.al., 2011); Pt-Pd gabbro-pegmatite ores (2476± 41 Ma, which agrees well with the U-Pb zircon age - 2470±9 Ma (Bayanova, 2004) and gabbronorites (2483±86 Ma) of PGE Kievey deposit and Fedorova Tundra metagabbroids (2494±54 Ma); Monchetundra gabbronorites - 2489±49 Ma. All investigations are devoted to memory of academician RAS, professor F. Mitrofanov (Russia), he was a leader of scientific school for geology, geochemistry and metallogenesis of ore deposits. The studies were supported by the RFBR 13-05-00493, OFI-M 13-05-12055, Department of Earth Sciences RAS (programs 2 and 4), IGCP-599.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

DOEpatents

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

The Effects of Redox Reactions on Sulfur Isotopes in Sulfide Melts at 1200 °C: Implications for 34S Enrichment in Magmas

NASA Astrophysics Data System (ADS)

Sanderson, A. M.; Frank, M. R.; Dodd, J. P.; Walker, J. A.

2017-12-01

δ34S values of mantle derived melts in subduction zones can differ from mantle values. This is often attributed to assimilation of country rock or interaction with another S-bearing reservoir. We hypothesized that variations in oxygen fugacity, f(O2), and in sulfur's valence state, may impact a change in the measured δ34S value of sulfide melts. Two synthetic sulfide melts (SM5 & SM7) with a composition of the mono-sulfide solution (MSS; Fe51S37Ni5Cu7) were homogenized for 30, 60 and 90 minutes at an oxygen fugacity between the quartz-fayalite-magnetite (QFM) and iron-wüstite (IW) buffers. Samples were separated into aliquots and subjected to varying fO2 (atmospheric O2, nickel-nickel oxide (NNO), QFM, and IW) at 1200 °C. Equilibrium was established through reversals and as a function of time. The δ34S value of the starting material was measured to be +7.3 to 7.9 ‰ (VCDT). δ34S values from experiments are displayed here relative to the starting material used for that experiment (δ34Ssample - δ34Sstarting). Experiments conducted at log f(O2) of -11.74 (IW), -10.02, -8.3 (QFM), and -7.6 (NNO) were found to be +0.1, +0.6, +1.7, and +1.8 ‰, respectively. The measured average δ34S values were found to vary directly with the imposed oxygen fugacity. The enrichment in 34S relative to 32S is most likely related to changes in the sulfur redox state (from S2-) or sulfur volatilization. Our results suggest that volatilization or variations in a magma's oxidation state can produce measurable changes in δ34S and that those changes must be considered when using δ34S to evaluate possible external sulfur contributions. These results will likely inform discussions on the source of metals and sulfur in layered mafic intrusions (e.g. Bushveld Complex).

In situ Fe-sulfide coating for arsenic removal under reducing conditions

NASA Astrophysics Data System (ADS)

Xie, Xianjun; Liu, Yaqing; Pi, Kunfu; Liu, Chongxuan; Li, Junxia; Duan, Mengyu; Wang, Yanxin

2016-03-01

An in situ Fe-sulfide coating approach has been developed for As-contaminated groundwater remediation. Alternate injection of Fe(II), O2-free water and S2- can realize Fe-sulfide coating onto quartz sands with minor changes in porosity. As(III) uptake experiment indicated that the retardation factor for As(III) was 37 and dynamic retention capacity was 44.94 mg As(III)/g Fe, which was much higher than the maximum adsorption capacity for As(III) by FeS and FeS2. This result indicated that adsorption cannot be the only mechanism for As(III) uptake by Fe-sulfide coating layer. The SEM image and FTIR spectra results suggested that interaction between As(III) and Fe-sulfides and formation of As-sulfide precipitates could significantly contribute to As(III) uptake by Fe-sulfide coating layer. Alternate injection of Fe(II) + As(III) and S2- was conducted to simulate in situ As immobilization from real groundwater. The SEM image showed that the quartz sands were mainly covered by crystalline framboidal pyrite after such amendment. The breakthrough of As(III) was not observed during this experiment and the removal capacity for As(III) was 109.7 mg As/g Fe. The As(III) immobilization mechanism during alternate injection of Fe(II) + As(III) and S2- was significantly different from that of As(III) uptake by Fe-sulfide coating. The direct interaction between As(III) and S2- produced As-sulfides contributed to the high As(III) removal capacity during alternate injection of Fe(II) + As(III) and S2-. This result indicated that alternate injection of Fe(II) and S2- approach has an attractive application for As-contaminated groundwater remediation under strongly reducing environment.

In situ Fe-sulfide coating for arsenic removal under reducing conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Xianjun; Liu, Yaqing; Pi, Kunfu

2016-03-01

An in situ Fe-sulfide coating approach has been developed for As-contaminated groundwater remediation. Alternate injection of Fe(II), O 2-free water and S 2$-$ can realize Fe-sulfide coating onto quartz sands with minor changes in porosity. As(III) uptake experiment indicated that the retardation factor for As(III) was 37 and dynamic retention capacity was 44.94 mg As(III)/g Fe, which was much higher than the maximum adsorption capacity for As(III) by FeS and FeS 2. This result indicated that adsorption cannot be the only mechanism for As(III) uptake by Fe-sulfide coating layer. The SEM image and FTIR spectra results suggested that interaction betweenmore » As(III) and Fe-sulfides and formation of As-sulfide precipitates could significantly contribute to As(III) uptake by Fe-sulfide coating layer. Alternate injection of Fe(II) + As(III) and S 2$-$ was conducted to simulate in situ As immobilization from real groundwater. The SEM image showed that the quartz sands were mainly covered by crystalline framboidal pyrite after such amendment. The breakthrough of As(III) was not observed during this experiment and the removal capacity for As(III) was 109.7 mg As/g Fe. The As(III) immobilization mechanism during alternate injection of Fe(II) + As(III) and S 2$-$ was significantly different from that of As(III) uptake by Fe-sulfide coating. The direct interaction between As(III) and S 2$-$ produced As-sulfides contributed to the high As(III) removal capacity during alternate injection of Fe(II) + As(III) and S 2$-$. This result indicated that alternate injection of Fe(II) and S 2$-$ approach has an attractive application for As-contaminated groundwater remediation under strongly reducing environment.« less

Comparative analysis of strain fields in layers of step-graded metamorphic buffers of various designs

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ruban, O. A.; Tabachkova, N. Yu.; Shchetinin, I. V.

2017-10-01

Spatial distribution of residual elastic strain in the layers of two step-graded metamophic buffers of various designs, grown by molecular beam epitaxy from ternary InxAl1-xAs solutions on GaAs(001) substrates, is obtained using reciprocal space mapping by three-axis X-ray diffractometry and the linear theory of elasticity. The difference in the design of the buffers enabled the formation of a dislocation-free layer with different thickness in each of the heterostructures, which was the main basis of this study. It is shown that, in spite of the different design of graded metamorphic buffers, the nature of strain fields in them is the same, and the residual elastic strains in the final elements of both buffers adjusted for the effect of work hardening subject to the same phenomenological law, which describes the strain relief process in single-layer heterostructures.

Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

PubMed

Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

2012-07-01

In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

NASA Astrophysics Data System (ADS)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.

2009-08-15

In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

Tetradymite layer assisted heteroepitaxial growth and applications

DOEpatents

Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

2017-08-01

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

DOEpatents

Wu, Xuanzhi; Sheldon, Peter

2000-01-01

A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

DOEpatents

Martinson, Alex B. F.; Elam, Jeffrey W.; Pellin, Michael J.

2015-05-26

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.

Evaluation of corrosion products formed by sulfidation as inhibitors of the naphthenic corrosion of AISI-316 steel

NASA Astrophysics Data System (ADS)

Sanabria-Cala, J. A.; Montañez, N. D.; Laverde Cataño, D.; Y Peña Ballesteros, D.; Mejía, C. A.

2017-12-01

Naphthenic acids present in oil from most regions worldwide currently stand as the main responsible for the naphthenic corrosion problems, affecting the oil-refining industry. The phenomenon of sulfidation, accompanying corrosion processes brought about by naphthenic acids in high-temperature refining plant applications, takes place when the combination of sulfidic acid (H2S) with Fe forms layers of iron sulphide (FeS) on the material surface, layers with the potential to protect the material from attack by other corrosive species like naphthenic acids. This work assessed corrosion products formed by sulfidation as inhibitors of naphthenic corrosion rate in AISI-316 steel exposed to processing conditions of simulated crude oil in a dynamic autoclave. Calculation of the sulfidation and naphthenic corrosion rates were determined by gravimetry. The surfaces of the AISI-316 gravimetric coupons exposed to acid systems; were characterized morphologically by X-Ray Diffraction (XRD) and X-ray Fluorescence by Energy Dispersive Spectroscopy (EDS) combined with Scanning Electron Microscopy (SEM). One of the results obtained was the determination of an inhibiting effect of corrosion products at 250 and 300°C, where lower corrosion rate levels were detected. For the temperature of 350°C, naphthenic corrosion rates increased due to deposition of naphthenic acids on the areas where corrosion products formed by sulfidation have lower homogeneity and stability on the surface, thus accelerating the destruction of AISI-316 steel. The above provides an initial contribution to oil industry in search of new alternatives to corrosion control by the attack of naphthenic acids, from the formation of FeS layers on exposed materials in the processing of heavy crude oils with high sulphur content.

Platinum mineralization in the Kapalagulu Intrusion, western Tanzania

NASA Astrophysics Data System (ADS)

Wilhelmij, Harry R.; Cabri, Louis J.

2016-03-01

Low-grade copper and nickel mineralization was found near the eastern shore of Lake Tanganyika at Kungwe Bay in the early part of the twentieth century. The mineralization occurs in harzburgite at the base of a layered gabbro complex known as the Kapalagulu Intrusion, emplaced between the Paleoproterozoic Ubendian basement and overlying Neoproterozoic Itiaso Group metasediments. Several mining and exploration companies continued the geophysical and drilling exploration for base metals throughout the last century culminating in the discovery of high-grade platinum-group element (PGE) mineralization associated with chromitite and sulfide-bearing harzburgite within the southeastern extension of the Kapalagulu Intrusion (known as the Lubalisi Zone) that is covered by a layer of nickel-rich laterite regolith. The poorly layered southeastern harzburgite forms part of the >1500 m-thick Lower Ultramafic Sequence and resembles a dike-like body that flares upwards into a succession of well-layered gabbroic rocks of the Upper Mafic Sequence. No PGE mineralization has been found in the layered gabbro; all the mineralization is associated with the chromite- and sulfide-rich harzburgite of the Lower Ultramafic Sequence and the laterite regolith overlying the mineralized harzburgite. The Lubalisi Zone harzburgite is underlain by basal dunite and overlain by an interval of layered harzburgite and troctolite and this ultramafic sequence is folded into a syncline that plunges towards the northwest that has been modified by major dolerite-filled faults orientated subparallel to the fold axial surface. Extensive deep drilling in the Lubalisi Zone of the Kapalagulu Intrusion shows that the folded harzburgite can be subdivided into a lower feldspathic harzburgite, a harzburgite containing chromitite seams and intervals of sulfide and chromite mineralization known as the Main Chromite Sulfide Succession (MCSS), an overlying sulfide-rich harzburgite, and an upper feldspathic harzburgite. Impersistent, stratiform PGE mineralized horizons occur within the MCSS harzburgite from which drill core samples were taken for platinum-group mineral (PGM) characterization from two drill holes. Where the PGE reefs reach the surface there is residual PGE mineralization within the laterite regolith from which drill core samples were taken from various laterite lithological units for PGM characterization. As the harzburgite PGE reefs contain significant concentrations of both sulfide and chromite (including chromitite seams) they resemble the PGE-rich chromitite seams of the Bushveld Complex rather than the PGE-bearing Main Sulfide Zone of the Great Dyke and Main Sulfide Layer of the Munni Munni Complex. The dominant Pd PGM in three PGE reef samples varies, ranging ( n = 164, relative wt%) from bismuthides (63 %), bismuthtellurides (19 %), and tellurides (6 %), to tellurides (39 %), bismuthtellurides (24 %), stannides (14 %), and alloys (13 %), and to antimon-arsenides (33 %), stannides (21 %), bismuthides (17 %), tellurides (13 %), and alloys (10 %). From 13.5 % to 21.0 % of the total Pd occurs as a solid solution in pentlandite. The three samples have similar Pt PGM modal distributions ( n = 172, relative wt%); the dominant Pt mineral is sperrylite (79, 58, and 47 %) followed by tellurides (15, 17, 21 %), alloys (2, 1, 1 %), and sulfides (2, 1, 0 %). Comparison of Pd/Pt ratios from assays to those calculated from minerals show that the data for the Pt and Pd PGM are very robust, confirming the concentration methodology and characterization. Study of samples from a shallow drill hole penetrating the laterite regolith shows that the primary Pd mineralization has not survived oxidation, is mainly dispersed, but some was reconstituted to form secondary minerals: cabriite, unnamed tellurides, a selenide, a Pd-Te-Hg mineral, alloys and Pd-bearing secondary sulfides (millerite and heazlewoodite). The primary Pt minerals are more resistant to oxidation and dissolution, especially sperrylite and isoferroplatinum, but it is likely that other Pt alloys (tetraferroplatinum and tulameenite) are of secondary origin after dissolution of Pt tellurides.

Layered Compounds and Intercalation Chemistry: An Example of Chemistry and Diffusion in Solids.

ERIC Educational Resources Information Center

Whittingham, M. Stanley; Chianelli, Russell R.

1980-01-01

Considers a few areas of oxide/sulfide and intercalation-type chemistry. Discusses synthesis of the disulfides of the metals of group IVB, VB, and VIB; the intercalation reaction between lithium and titanium disulfide; other intercalates; and sulfide catalysts. (CS)

Efficiency enhancement of polymer solar cells by applying poly(vinylpyrrolidone) as a cathode buffer layer via spin coating or self-assembly.

PubMed

Wang, Haitao; Zhang, Wenfeng; Xu, Chenhui; Bi, Xianghong; Chen, Boxue; Yang, Shangfeng

2013-01-01

A non-conjugated polymer poly(vinylpyrrolidone) (PVP) was applied as a new cathode buffer layer in P3HT:PCBM bulk heterojunction polymer solar cells (BHJ-PSCs), by means of either spin coating or self-assembly, resulting in significant efficiency enhancement. For the case of incorporation of PVP by spin coating, power conversion efficiency (PCE) of the ITO/PEDOT:PSS/P3HT:PCBM/PVP/Al BHJ-PSC device (3.90%) is enhanced by 29% under the optimum PVP spin-coating speed of 3000 rpm, which leads to the optimum thickness of PVP layer of ~3 nm. Such an efficiency enhancement is found to be primarily due to the increase of the short-circuit current (J(sc)) (31% enhancement), suggesting that the charge collection increases upon the incorporation of a PVP cathode buffer layer, which originates from the conjunct effects of the formation of a dipole layer between P3HT:PCBM active layer and Al electrodes, the chemical reactions of PVP molecules with Al atoms, and the increase of the roughness of the top Al film. Incorporation of PVP layer by doping PVP directly into the P3HT:PCBM active layer leads to an enhancement of PCE by 13% under the optimum PVP doping ratio of 3%, and this is interpreted by the migration of PVP molecules to the surface of the active layer via self-assembly, resulting in the formation of the PVP cathode buffer layer. While the formation of the PVP cathode buffer layer is fulfilled by both fabrication methods (spin coating and self-assembly), the dependence of the enhancement of the device performance on the thickness of the PVP cathode buffer layer formed by self-assembly or spin coating is different, because of the different aggregation microstructures of the PVP interlayer.

Lithology and paleontology of the reflective layer horizon a.

PubMed

Saito, T; Burckle, L H; Ewing, M

1966-12-02

Cores recovered from horizon A are Late Cretaceous (Maestrichtian) in age and consist o alternating layers of calcareous turbidites and "red clay." The presence of red clay suggests that the water depth in this area during Cretaceous time was at least as great as at present-more than 5100 meters. A middle Cretaceous (Cenomanian) core consisting of interbedded sand and gravel and light-to-dark-gray lutite was taken in the same area from a layer stratigraphically below the horizon; the presence of hydrogen sulfide and iron sulfide may indicate anaerobic conditions that may be attributable to local ponding of sediment in Cenomanian time.

Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fangliang; Li, Guoqiang, E-mail: msgli@scut.edu.cn

2014-01-27

Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{submore » 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.« less

Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer

NASA Astrophysics Data System (ADS)

Luo, W. B.; Zhu, J.; Li, Y. R.; Wang, X. P.; Zhang, Y.

2009-05-01

Hf-doped Bi4Ti3O12 (BTH) ferroelectric films with excellent electrical properties were epitaxially integrated with GaN semiconductor using (111) SrTiO3 (STO)/rutile (200) TiO2 as buffer layer. The STO/TiO2 buffer layer was deposited by laser molecular beam epitaxy. The structural characteristics of the buffer layer were in situ and ex situ characterized by reflective high energy electron diffraction, x-ray diffraction (XRD), and high resolution transmission microscopy. The overlaying SrRuO3 (SRO) and BTH films were then deposited by pulsed laser deposition. XRD spectra, including θ-2θ and Φ scans, show that the (208) BTH films were epitaxially grown on GaN, and the BTH films inherit the in-plane twin-domain of STO buffer layer. Electrical measurements demonstrate that the non-c axis BTH films possess a large remnant polarization (2Pr=45 μC/cm2), excellent fatigue endurance (10.2% degradation after 1.1×1010 switching cycles), and a low leakage current density (1.94×10-7 A/cm2 at an electric field of 200 kV/cm). These results reveal that the (208) BTH films with favorable electrical performance could be epitaxially grown on GaN template using STO/TiO2 buffer layer.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Improvement of transmission properties of visible pilot beam for polymer-coated silver hollow fibers with acrylic silicone resin as buffer layer for sturdy structure

NASA Astrophysics Data System (ADS)

Iwai, Katsumasa; Takaku, Hiroyuki; Miyagi, Mitsunobu; Shi, Yi-Wei; Zhu, Xiao-Song; Matsuura, Yuji

2017-02-01

Flexible hollow fibers with 530-μm-bore size were developed for infrared laser delivery. Sturdy hollow fibers were fabricated by liquid-phase coating techniques. A silica glass capillary is used as the substrate. Acrylic silicone resin is used as a buffer layer and the buffer layer is firstly coated on the inner surface of the capillary to protect the glass tube from chemical damages due to the following silver plating process. A silver layer was inner-plated by using the conventional silver mirror-plating technique. To improve adhesion of catalyst to the buffer layer, a surface conditioner has been introduced in the method of silver mirror-plating technique. We discuss improvement of transmission properties of sturdy polymer-coated silver hollow fibers for the Er:YAG laser and red pilot beam delivery.

Atomically Precise Growth of Catalytically Active Cobalt Sulfide on Flat Surfaces and within a Metal–Organic Framework via Atomic Layer Deposition

DOE PAGES

Peters, Aaron W.; Li, Zhanyong; Farha, Omar K.; ...

2015-08-04

Atomic layer deposition (ALD) has been employed as a new synthetic route to thin films of cobalt sulfide on silicon and fluorine-doped tin oxide platforms. The self-limiting nature of the stepwise synthesis is established through growth rate studies at different pulse times and temperatures. Additionally, characterization of the materials by X-ray diffraction and X-ray photoelectron spectroscopy indicates that the crystalline phase of these films has the composition Co 9S 8. The nodes of the metal–organic framework (MOF) NU-1000 were then selectively functionalized with cobalt sulfide via ALD in MOFs (AIM). Spectroscopic techniques confirm uniform deposition of cobalt sulfide throughout themore » crystallites, with no loss in crystallinity or porosity. The resulting material, CoS-AIM, is catalytically active for selective hydrogenation of m-nitrophenol to m-aminophenol, and outperforms the analogous oxide AIM material (CoO-AIM) as well as an amorphous CoS x reference material. Here, these results reveal AIM to be an effective method of incorporating high surface area and catalytically active cobalt sulfide in metal–organic frameworks.« less

Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

PubMed

Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

2014-06-25

Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2016-09-21

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Effect of Homo-buffer Layers on the Properties of Sputtering Deposited Ga2O3 Films

NASA Astrophysics Data System (ADS)

Huang, Jian; Li, Bing; Ma, Yuncheng; Tang, Ke; Huang, Haofei; Hu, Yan; Zou, Tianyu; Wang, Linjun

2018-05-01

β- Ga2O3 films were grown by radio-frequency magnetron sputtering method. The influence of Ga2O3 buffer layers and annealing treatment on the structural, optical, morphological and electrical properties of Ga2O3 films was studied. The results revealed an improvement of crystalline quality and transmittance of annealed β- Ga2O3 films prepared with homo-buffer layers. Ga2O3 film UV photodetectors were fabricated with a new B and Ga co-doped ZnO films (BGZO)/Au interdigitated electrode. A good ohmic contact was formed between the film and the electrode. For the detector based on Ga2O3 films with buffer layers, a higher value of photo response and faster response times was obtained.

Optimization of the Energy Level Alignment between the Photoactive Layer and the Cathode Contact Utilizing Solution-Processed Hafnium Acetylacetonate as Buffer Layer for Efficient Polymer Solar Cells.

PubMed

Yu, Lu; Li, Qiuxiang; Shi, Zhenzhen; Liu, Hao; Wang, Yaping; Wang, Fuzhi; Zhang, Bing; Dai, Songyuan; Lin, Jun; Tan, Zhan'ao

2016-01-13

The insertion of an appropriate interfacial buffer layer between the photoactive layer and the contact electrodes makes a great impact on the performance of polymer solar cells (PSCs). Ideal interfacial buffer layers could minimize the interfacial traps and the interfacial barriers caused by the incompatibility between the photoactive layer and the electrodes. In this work, we utilized solution-processed hafnium(IV) acetylacetonate (Hf(acac)4) as an effective cathode buffer layer (CBL) in PSCs to optimize the energy level alignment between the photoactive layer and the cathode contact, with the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) all simultaneously improved with Hf(acac)4 CBL, leading to enhanced power conversion efficiencies (PCEs). Ultraviolet photoemission spectroscopy (UPS) and scanning Kelvin probe microscopy (SKPM) were performed to confirm that the interfacial dipoles were formed with the same orientation direction as the built-in potential between the photoactive layer and Hf(acac)4 CBL, benefiting the exciton separation and electron transport/extraction. In addition, the optical characteristics and surface morphology of the Hf(acac)4 CBL were also investigated.

Photovoltaic devices comprising zinc stannate buffer layer and method for making

DOEpatents

Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

2001-01-01

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya. R. N.

2008-01-01

CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

Cadmium zinc sulfide by solution growth

DOEpatents

Chen, Wen S.

1992-05-12

A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

Electron-Selective TiO 2 Contact for Cu(In,Ga)Se 2 Solar Cells

DOE PAGES

Hsu, Weitse; Sutter-Fella, Carolin M.; Hettick, Mark; ...

2015-11-03

The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UVmore » part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO 2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO 2 on an active cell area of 10.5 mm2. In conclusion, optimized TiO 2/CIGS solar cells show excellent long-term stability. The results imply that TiO 2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.« less

Effect of annealing on magnetoresistance and microstructure of multilayered CoFe/Cu systems with different buffer layer

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Krinitsina, T. P.; Chernyshova, T. A.; Ustinov, V. V.

2015-02-01

The effects of annealing on the structure, magnetic hysteresis, and magnetoresistance of [Co90Fe10(15 Å)/Cu(23 Å)] n superlattices with Cr and Co90Fe10 buffer layers of different thicknesses have been studied. The optimum temperature and time of annealing that increase the magnetoresistance were shown to depend on the buffer layer thickness. The coefficients of effective interlayer diffusion due to the annealing have been determined.

Structural and luminescent Properties of Bulk InAsSb

DTIC Science & Technology

2011-12-21

have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1-x alloys and GaSb and InSb substrates in...wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1x alloys...long wave IR range. We used compositionally graded GaInSb, AlGaInSb, and InAsxSb1x metamorphic buffer layers to accommodate the misfit strain between

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

NASA Astrophysics Data System (ADS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-12-01

In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

Partitioning of palladium, iridium, platinum, and gold between sulfide liquid and basalt melt at 1,200 degree C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stone, W.E.; Crocket, J.H.; Fleet, M.E.

1990-08-01

Iron-nickel monosulfide and basalt glass containing trace amounts of PGE equilibrated at 1,200{degree}C, and f{sub o{sub 2}} = 10{sup {minus}9.2} (close to the wustite-magnetite buffer) and f{sub s{sub 2}} = 10{sup {minus}0.9}, have been analyzed for noble metals by radiochemical and instrumental neutron activation analysis. The average contents of PGE in coexisting Fe-Ni sulfide and basalt glass, respectively, are Pd, 50 ppm and 0.5 ppb; Ir, 50 ppm and 0.5 ppb; Pt, 100 ppm and 10 ppb; and Au, 0.7 ppm and 0.8 ppb. The sulfide liquid-silicate melt partition coefficients (D values) for the noble metals are (9 {plus minus}more » 7) {times} 10{sup 4} for Pd, (1 {plus minus} 0.7) {times} 10{sup 5} for Ir, (9 {plus minus} 6) {times} 10{sup 3} Pt, and (1 {plus minus} 0.9) {times} 10{sup 3} for Au. The noble metals are strongly partitioned into sulfide liquid, but the affinity of Pd and Ir for sulfide liquid is about 50 times greater than that of Pt and about 500 times greater than that of Au. The D values indicate that equilibrium partitioning between immiscible sulfide liquid and basalt magma would result in fractionation of the noble metals, which differs significantly from that generally observed in nature.« less

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

PubMed

Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

2015-08-01

Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

An over 18%-efficiency completely buffer-free Cu(In,Ga)Se2 solar cell

NASA Astrophysics Data System (ADS)

Ishizuka, Shogo; Nishinaga, Jiro; Koida, Takashi; Shibata, Hajime

2018-07-01

In this letter, an independently certified photovoltaic efficiency of 18.4% demonstrated from a completely buffer-layer-free Cu(In,Ga)Se2 (CIGS) solar cell is reported. A Si-doped CIGS thin film was used as the photoabsorber layer and a conductive B-doped ZnO (BZO) front electrode layer was directly deposited on the CIGS layer. Metastable acceptor activation by heat-light soaking treatment was performed to maximize the efficiency. The results presented here are expected to serve as a benchmark for simplified-structure CIGS devices as well as a reference for discussions on the role of buffer layers used in conventional CIGS solar cells.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

PubMed

Courtright, Brett A E; Jenekhe, Samson A

2015-12-02

We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui

2018-06-01

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

Properties of unrelaxed InAs{sub 1-X}Sb{sub X} alloys grown on compositionally graded buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belenky, G.; Donetsky, D.; Kipshidze, G.

Unrelaxed InAs{sub 1-x}Sb{sub x} layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs{sub 1-x}Sb{sub x} with given X. The InAs{sub 0.56}Sb{sub 0.44} layers demonstrate photoluminescence peak at 9.4 {mu}m at 150 K. The minority carrier lifetime measured at 77 K for InAs{sub 0.8}Sb{sub 0.2} was {tau} = 250 ns.

A novel enzymatic method for determination of homocysteine using electrochemical hydrogen sulfide sensor.

PubMed

Zhao, Dong; Liu, Tsan-Zon; Chan, Err-Cheng; Fein, Harry; Zhang, Xueji

2007-05-01

Homocysteine is a sulfur-containing compound produced during metabolism process of methionine. Its uptake in human plasma is believed to be the cause of cardiovascular diseases and many other diseases. An electrochemical method was proposed for selective and quantitative measurement of homocysteine by employing hydrogen sulfide sensor coupled with methionine a, g-lyase. The principle of this method is to measure the evolved hydrogen sulfide from the enzymatic reaction between homocysteine and methionine a, g-lyase. The sensitivities of the measurements at different pH values of the tris buffer solutions and at room temperature peaked to 275 pA/mM at pH 6.5 with detection limit of 150 nM (based on 3 s cutoff). The linearity measurements at pH 6.5 were performed for the homocysteine concentrations range from 0.5 to 200 mM, which is wider than the human blood plasma total homocysteine level of 5 to 100 mM, and the regressive analysis of the experiments gave R2=0.9987. The enzyme also showed the fastest response to homocysteine in the tris buffer solution of pH 7.5 with the current approaching its maximum at 134 seconds. The interference tests against several common agents were carried out, and found that cysteine and methionine were the major two species to introduce measurement problem. The solution to this interference problem was explored and discussed thoroughly based on the preliminary tests. The sensitivities of the experiments against several enzyme concentrations were also performed.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

NASA Astrophysics Data System (ADS)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

Cathode buffer composed of fullerene-ethylenediamine adduct for an organic solar cell

NASA Astrophysics Data System (ADS)

Kimoto, Yoshinori; Akiyama, Tsuyoshi; Fujita, Katsuhiko

2017-02-01

We developed a fullerene-ethylenediamine adduct (C60P-DC) for a cathode buffer material in organic bulk heterojunction solar cells, which enhance the open-circuit voltage (V oc). The evaporative spray deposition using ultra dilute solution (ESDUS) technique was employed to deposit the buffer layer onto the organic active layer to avoid damage during the deposition. By the insertion of a C60P-DC buffer layer, V oc and power conversion efficiency (PCE) were increased from 0.41 to 0.57 V and from 1.65 to 2.10%, respectively. The electron-only device with the C60P-DC buffer showed a much lower current level than that without the buffer, indicating that the V oc increase is caused not by vacuum level shift but by hole blocking. The curve fitting of current density-voltage (J-V) characteristics to the equivalent circuit with a single diode indicated that the decrease in reversed saturation current by hole blocking increased caused the V oc.

Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2015-08-15

The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for themore » (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.« less

Oxygen-free atomic layer deposition of indium sulfide

DOEpatents

Martinson, Alex B.; Hock, Adam S.; McCarthy, Robert; Weimer, Matthew S.

2016-07-05

A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less

Different distribution of in-situ thin carbon layer in hollow cobalt sulfide nanocages and their application for supercapacitors

NASA Astrophysics Data System (ADS)

Jin, Meng; Lu, Shi-Yu; Ma, Li; Gan, Meng-Yu; Lei, Yao; Zhang, Xiu-Ling; Fu, Gang; Yang, Pei-Shu; Yan, Mao-Fa

2017-02-01

Recently, cobalt sulfides emerge as a candidate for energy reserve and conversation. However, the problem of poor stability and low rate capability for cobalt sulfides restrict its practical application. Thin carbon layer (TCL) coated has been regarded as a promising constructing strategy for high performance supercapacitors, because TCL can promote the tremendous properties of bare materials. In this literature, we report a very interesting phenomenon that different distribution of in-situ carbon coated hollow CoS2 nanocages (external and both external and interior) can be synthesized only by adjusting sulfuration time, followed by calcination. Moreover, it is clearly observed that CoS2-C@TCL exhibits significant improvement for specific capacitance and good stability (better than CoS2@TCL and CoS2). These results compel us to design a series of experiments to figure out the reason and the more detailed mechanism is discussed in paper. More importantly, it will provide a new strategy for synthesis of special structure with in-situ carbon coated sulfide for energy conversion.

Layered hydrothermal barite-sulfide mound field, East Diamante Caldera, Mariana volcanic arc

USGS Publications Warehouse

Hein, James R.; de Ronde, Cornel E. J.; Koski, Randolph A.; Ditchburn, Robert G.; Mizell, Kira; Tamura, Yoshihiko; Stern, Robert J.; Conrad, Tracey; Ishizuka, Osamu; Leybourne, Matthew I.

2014-01-01

East Diamante is a submarine volcano in the southern Mariana arc that is host to a complex caldera ~5 × 10 km (elongated ENE-WSW) that is breached along its northern and southwestern sectors. A large field of barite-sulfide mounds was discovered in June 2009 and revisited in July 2010 with the R/V Natsushima, using the ROV Hyper-Dolphin. The mound field occurs on the northeast flank of a cluster of resurgent dacite domes in the central caldera, near an active black smoker vent field. A 40Ar/39Ar age of 20,000 ± 4000 years was obtained from a dacite sample. The mound field is aligned along a series of fractures and extends for more than 180 m east-west and >120 m north-south. Individual mounds are typically 1 to 3 m tall and 0.5 to 2 m wide, with lengths from about 3 to 8 m. The mounds are dominated by barite + sphalerite layers with the margins of each layer composed of barite with disseminated sulfides. Rare, inactive spires and chimneys sit atop some mounds and also occur as clusters away from the mounds. Iron and Mn oxides are currently forming small (<1-m diam, ~0.5-m tall) knolls on the top surface of some of the barite-sulfide mounds and may also drape their flanks. Both diffusely and focused fluids emanate from the small oxide knolls. Radiometric ages of the layered barite-sulfide mounds and chimneys vary from ~3,920 to 3,350 years. One layer, from an outcrop of 10- to 100-cm-thick Cu-rich layers, is notably younger with an age of 2,180 years. The Fe-Mn oxides were <5 years old at the time of collection in 2009.Most mound, chimney, and layered outcrop samples are dominated by barite, silica, and sphalerite; other sulfides, in decreasing order of abundance, are galena, chalcopyrite, and rare pyrite. Anglesite, cerussite, and unidentified Pb oxychloride and Pb phosphate minerals occur as late-stage interstitial phases. The samples contain high Zn (up to 23 wt %), Pb (to 16 wt %), Ag (to 487 ppm), and Au (to 19 ppm) contents. Some layered outcrop samples are dominated by chalcopyrite resulting in ≤4.78 wt % Cu in a bulk sample (28 wt % for a single lens), with a mean of 0.28 wt % for other samples. Other significant metal enrichments are Sb (to 1,320 ppm), Cd (to 1,150 ppm), and Hg (to 55 ppm).The East Diamante mound field has a unique set of characteristics compared to other hydrothermal sites in the Mariana arc and elsewhere. The geochemical differences may predominantly reflect the distribution of fractures and faults and consequently the rock/water ratio, temperature of the fluid in the upper parts of the circulation system, and extensive and prolonged mixing with seawater. The location of mineralization is controlled by fractures. Following resurgent doming within the caldera, mineralization resulted from focused flow along small segments of linear fractures rather than from a point source, typical of hydrothermal chimney fields. Based on the mineral assemblage, the maximum fluid temperatures were ~260°C, near the boiling point for the water depths of the mound field (367–406 m). Lateral fluid flow within the mounds precipitated interstitial sphalerite, silica, and Pb minerals within a network of barite with disseminated sulfides; silica was the final phase to precipitate. The current low-temperature precipitation of Fe and Mn oxides and silica may represent rejuvenation of the system.

Immiscibility of Fluid Phases at Magmatic-hydrothermal Transition: Formation of Various PGE-sulfide Mineralization for Layered Basic Intrusions

NASA Astrophysics Data System (ADS)

Zhitova, L.; Borisenko, A.; Morgunov, K.; Zhukova, I.

2007-12-01

Fluid inclusions in quartz of the Merensky Reef (Bushveld Complex, South Africa) and the Chineisky Pluton (Transbaikal Region, Russia) were studied using cryometry, microthermometry, Raman-spectroscopy, LA ICP- MS, scanning electronic microscopy, gas-chromatography and isotopic methods. This allowed us to document some examples of fluid phase separation resulting in formation of different types of PGE-sulfide mineralization for layered basic intrusions. The results obtained show at least three generations of fluid separated from boiling residual alumosilicate intercumulus liquid of the Merensky Reef. The earliest fluid phase composed of homogenous high-dense methane and nitrogen gas mixture was identified in primary gas and co-existing anomalous fluid inclusions from symplectitic quartz. The next generation, heterophase fluid, composed of brines containing a free low-dense (mostly of carbon dioxide) gas phase, was observed in primary multiphase and coexisting gas-rich inclusions of miarolitic quartz crystals. The latest generation was also a heterophase fluid (low salinity water-salt solution and free low-dense methane gas phase) found in primary water-salt and syngenetic gas inclusions from peripheral zones of miarolitic quartz crystals. For the Chineisky Pluton reduced endocontact magmatogene fluids changed to oxidized low salinity hydrothermal fluids in exocontact zone. This resulted in formation of sulfide-PGE enrichment marginal zones of intrusion. The results obtained give us a possibility to suggest that: 1) Fluid phase separation is a typical feature of magmatogene fluids for layered basic intrusions. 2) Reduced fluids can extract and transport substantial PGE and sulfide concentrations. 3) Oxidation of reduced fluids is one of the most important geochemical barriers causing abundant PGE minerals and sulfides precipitation. This in turn results in both formation of PGE reefs or enriched contact zones of layered basic intrusions. This work was supported by the Ministry for Russian Science and Education, Grant DSP.2.1.1.702, by RFBR Grants ## 07-05-00685, 07-05-00803, Grant VMTK-2007 IGM SB RAS.

Simple O2 plasma-processed V2O5 as an anode buffer layer for high-performance polymer solar cells.

PubMed

Bao, Xichang; Zhu, Qianqian; Wang, Ting; Guo, Jing; Yang, Chunpeng; Yu, Donghong; Wang, Ning; Chen, Weichao; Yang, Renqiang

2015-04-15

A simple O2 plasma processing method for preparation of a vanadium oxide (V2O5) anode buffer layer on indium tin oxide (ITO)-coated glass for polymer solar cells (PSCs) is reported. The V2O5 layer with high transmittance and good electrical and interfacial properties was prepared by spin coating a vanadium(V) triisopropoxide oxide alcohol solution on ITO and then O2 plasma treatment for 10 min [V2O5 (O2 plasma)]. PSCs based on P3HT:PC61BM and PBDTTT-C:PC71BM using V2O5 (O2 plasma) as an anode buffer layer show high power conversion efficiencies (PCEs) of 4.47 and 7.54%, respectively, under the illumination of AM 1.5G (100 mW/cm(2)). Compared to that of the control device with PBDTTT-C:PC71BM as the active layer and PSS (PCE of 6.52%) and thermally annealed V2O5 (PCE of 6.27%) as the anode buffer layer, the PCE was improved by 15.6 and 20.2%, respectively, after the introduction of a V2O5 (O2 plasma) anode buffer layer. The improved PCE is ascribed to the greatly improved fill factor and enhanced short-circuit current density of the devices, which benefited from the change in the work function of V2O5, a surface with many dangling bonds for better interfacial contact, and the excellent charge transport property of the V2O5 (O2 plasma) layer. The results indicate that an O2 plasma-processed V2O5 film is an efficient and economical anode buffer layer for high-performance PSCs. It also provides an attractive choice for low-cost fabrication of organic electronics.

Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

NASA Astrophysics Data System (ADS)

Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

2016-04-01

Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films

NASA Astrophysics Data System (ADS)

Sasaki, Daisuke; Anh, Le Duc; Nam Hai, Pham; Tanaka, Masaaki

2014-04-01

We systematically investigated the influence of strain on the electronic structure and ferromagnetism of (In,Fe)As thin films. It is found that while the shift of the critical point energies of compressive-strained (In,Fe)As layers grown on (In1-y,Gay)As (y = 0.05, 0.1) buffer layers can be explained by the hydrostatic deformation effect (HDE) alone, those of tensile-strained (In,Fe)As layers grown on (Ga1-z,Alz)Sb (z = 0, 0.5, 1) buffer layers can be explained by the combination of HDE and the quantum confinement effect (QCE). The Curie temperature TC of the (In,Fe)As layers strongly depends on the strain, and shows a maximum for the (In,Fe)As layer grown on a GaSb buffer layer. The strain dependence of TC can be explained by the s-d exchange mechanism taking into account HDE and QCE.

Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashistha, Indu B., E-mail: indu-139@yahoo.com; Sharma, S. K.; Sharma, Mahesh C.

2015-08-28

In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5more » eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.« less

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

NASA Technical Reports Server (NTRS)

Srinivas, S.; Pinto, R.; Pai, S. P.; Dsousa, D. P.; Apte, P. R.; Kumar, D.; Purandare, S. C.; Bhatnagar, A. K.

1995-01-01

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si (100), Sapphire and LaAlO3 (100) substrates. The effect of substrate temperatures up to 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa2Cu3O7-x (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

Buffer layer between a planar optical concentrator and a solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solano, Manuel E.; Barber, Greg D.; Department of Chemistry, Pennsylvania State University, University Park, PA 16802

2015-09-15

The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structuremore » increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.« less

Tuning the Two-Dimensional Electron Liquid at Oxide Interfaces by Buffer-Layer-Engineered Redox Reactions.

PubMed

Chen, Yunzhong; Green, Robert J; Sutarto, Ronny; He, Feizhou; Linderoth, Søren; Sawatzky, George A; Pryds, Nini

2017-11-08

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO 3 (STO) achieved using polar La 7/8 Sr 1/8 MnO 3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant X-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces.

La0.7Sr0.3MnO3: A single, conductive-oxide buffer layer for the development of YBa2Cu3O7-δ coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Kang, B. W.; Sathyamurthy, S.; Goyal, A.; Christen, D. K.

2001-10-01

Coated conductor applications in power technologies require stabilization of the high-temperature superconducting (HTS) layers against thermal runaway. Conductive La0.7Sr0.3MnO3 (LSMO) has been epitaxially grown on biaxially textured Ni substrates as a single buffer layer. The subsequent epitaxial growth of YBa2Cu3O7-δ (YBCO) coatings by pulsed laser deposition yielded self-field critical current densities (Jc) of 0.5×106A/cm2 at 77 K, and provided good electrical connectivity over the entire structure (HTS+conductive-buffer+metal substrate). Property characterizations of YBCO/LSMO/Ni architecture revealed excellent crystallographic and morphological properties. These results have demonstrated that LSMO, used as a single, conductive buffer layer, may offer potential for use in fully stabilized YBCO coated conductors.

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

NASA Astrophysics Data System (ADS)

Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

2018-05-01

In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

Improved fill factor in inverted planar perovskite solar cells with zirconium acetate as the hole-and-ion-blocking layer.

PubMed

Zhang, Xuewen; Liang, Chunjun; Sun, Mengjie; Zhang, Huimin; Ji, Chao; Guo, Zebang; Xu, Yajun; Sun, Fulin; Song, Qi; He, Zhiqun

2018-03-14

Planar perovskite solar cells (PSCs) have gained great interest due to their low-temperature solution preparation and simple process. In inverted planar PSCs, an additional buffer layer is usually needed on the top of the PCBM electron-transport layer (ETL) to enhance the device performance. In this work, we used a new buffer layer, zirconium acetate (Zr(Ac) 4 ). The inclusion of the Zr(Ac) 4 buffer layer leads to the increase of FF from ∼68% to ∼79% and PCE from ∼14% to ∼17% in the planar PSCs. The UPS measurement indicates that the Zr(Ac) 4 layer has a low HOMO level of -8.2 eV, indicating that the buffer layer can act as a hole-blocking layer. Surface morphology and surface chemistry investigations reveal that the elements I, MA and Pb can diffuse across the PCBM ETL, damaging the device performance. The covering Zr(Ac) 4 molecules fill in the pinholes of the PCBM layer and effectively block the ions/molecules of the perovskite from diffusion across the ETL. The resulting more robust PCBM/Zr(Ac) 4 ETL leads to weaker ionic charge accumulation and lower diode leakage current. The double role of hole-and-ion blocking of the Zr(Ac) 4 layer explains the improved FF and PCE in the PSCs.

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

NASA Astrophysics Data System (ADS)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

FIBER AND INTEGRATED OPTICS: Investigation of a fiber-optic polarizer with a metal film and a dielectric buffer layer

NASA Astrophysics Data System (ADS)

Gelikonov, V. M.; Gusovskiĭ, D. D.; Konoplev, Yu N.; Leonov, V. I.; Mamaev, Yu A.; Turkin, A. A.

1990-01-01

A model of a plane-layer waveguide is used in a theoretical analysis of the attenuation coefficients of the TM0 and TE0 waves in a fiber-optic polarizer with a metal film and two dielectric buffer layers, one of which is the residual part of the fiber cladding. A report is given of the construction and experimental investigation of polarizers with a buffer layer of magnesium fluoride and an aluminum film operating at wavelengths of 0.63 and 0.81 μm and characterized by extinction coefficients of at least 53 and 46 dB, respectively, and by losses not exceeding 0.5 dB.

Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haight, Richard A.; Hannon, James B.; Oida, Satoshi

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

PubMed Central

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C

2012-01-01

Summary Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased. PMID:22497001

Junction formation of Cu(3)BiS(3) investigated by Kelvin probe force microscopy and surface photovoltage measurements.

PubMed

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C; Sadewasser, Sascha

2012-01-01

Recently, the compound semiconductor Cu(3)BiS(3) has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu(3)BiS(3) absorber layer and the junction formation with CdS, ZnS and In(2)S(3) buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20-100 nm, and a considerably smaller work-function distribution for In(2)S(3) compared to that of CdS and ZnS. For In(2)S(3) and CdS buffer layers the KPFM experiments indicate negatively charged Cu(3)BiS(3) grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In(2)S(3) buffer layer. Our findings indicate that Cu(3)BiS(3) may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Recurrence of Seagrass Mortality in Florida Bay: The Role of Climate Change and Implications for Carbon Sequestration

NASA Astrophysics Data System (ADS)

Yarbro, L.; Carlson, P. R., Jr.

2016-02-01

Catastrophic mortality of seagrass in Florida Bay (USA) from 1987 to 1991 resulted in the complete loss of thousands of hectares of dense Thalassia testudinum beds. At that time, acutely toxic levels of dissolved sulfide in sediments were determined to be the proximal cause of seagrass mortality, but the mechanisms responsible for sulfide accumulation in sediments were not demonstrated. With the recurrence of seagrass mortality in Florida Bay in summer 2015, we show that several processes create the conditions that lead to sulfide toxicity and catastrophic mortality of Thalassia. Regional drought and elevated water temperature lead to hypersalinity, particularly in the northern Bay. In addition, evaporation of seawater on mudbanks and microtidal flow patterns create stratified brine layers in basins adjacent to mudbanks. Because of very high seagrass shoot densities and limited tidal exchange, brine layers limit oxygen diffusion and prevent oxidation of sulfide in sediments and bottom water, exposing roots, rhizomes and lateral meristems of Thalassia to acutely toxic levels of sulfide, causing extensive mortality. Dead belowground tissues provide labile carbon sources to sulfate-reducing bacteria enhancing sulfide production and creating a positive feedback loop of increasing sulfide toxicity leading to further seagrass death. The carbon sequestration capacity of these dense seagrass communities is diminished three ways: 1) export of dead seagrass shoots and leaves as floating wrack, 2) in situ decomposition of roots, rhizomes, and some leaf material, and 3) reduced areal productivity of surviving seagrasses. Climate analyses show that, in the short term ( 50 years), higher water temperatures and evaporation rates might result in recurring seagrass mortality events. However, in the long term, sea level rise will increase tidal exchange and flushing in Florida Bay reducing the likelihood of seagrass mortality.

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Däubler, J., E-mail: juergen.daeubler@iaf.fraunhofer.de; Passow, T.; Aidam, R.

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown onmore » metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.« less

Manufacturing demonstration of microbially mediated zinc sulfide nanoparticles in pilot-plant scale reactors

DOE PAGES

Moon, Ji-Won; Phelps, Tommy J.; Fitzgerald Jr, Curtis L.; ...

2016-04-27

The thermophilic anaerobic metal-reducing bacterium Thermoanaerobacter sp. X513 efficiently produces zinc sulfide (ZnS) nanoparticles (NPs) in laboratory-scale ( ≤24-L) reactors. To determine whether this process can be up-scaled and adapted for pilot-plant production while maintaining NP yield and quality, a series of meso-scale experiments were performed using 100-l and 900-l reactors. Pasteurization and N 2-sparging replaced autoclaving and boiling for deoxygenating media in the transition from small-scale to pilot-plant reactors. Consecutive 100-L batches using new or recycled media produced ZnS NPs with highly reproducible ~2 nm average crystallite size (ACS) and yields of ~0.5g L -1, similar to small-scale batches.more » The 900-L pilot plant reactor produced ~ 320 g ZnS without process optimization or replacement of used medium; this quantity would be sufficient to form a ZnS thin film with ~120 nm thickness over 0.5 m width 13 km length. At all scales, the bacteria produced significant amounts of acetic, lactic and formic acids, which could be neutralized by the controlled addition of sodium hydroxide without the use of an organic pH buffer, eliminating 98% of the buffer chemical costs. In conclusion, the final NP products were characterized using XRD, ICP-OES, FTIR, DLS, and C/N analyses, which confirmed the growth medium without organic buffer enhanced the ZnS NP properties by reducing carbon and nitrogen surface coatings and supporting better dispersivity with similar ACS.« less

Manufacturing demonstration of microbially mediated zinc sulfide nanoparticles in pilot-plant scale reactors.

PubMed

Moon, Ji-Won; Phelps, Tommy J; Fitzgerald, Curtis L; Lind, Randall F; Elkins, James G; Jang, Gyoung Gug; Joshi, Pooran C; Kidder, Michelle; Armstrong, Beth L; Watkins, Thomas R; Ivanov, Ilia N; Graham, David E

2016-09-01

The thermophilic anaerobic metal-reducing bacterium Thermoanaerobacter sp. X513 efficiently produces zinc sulfide (ZnS) nanoparticles (NPs) in laboratory-scale (≤ 24-L) reactors. To determine whether this process can be up-scaled and adapted for pilot-plant production while maintaining NP yield and quality, a series of pilot-plant scale experiments were performed using 100-L and 900-L reactors. Pasteurization and N2-sparging replaced autoclaving and boiling for deoxygenating media in the transition from small-scale to pilot plant reactors. Consecutive 100-L batches using new or recycled media produced ZnS NPs with highly reproducible ~2-nm average crystallite size (ACS) and yields of ~0.5 g L(-1), similar to the small-scale batches. The 900-L pilot plant reactor produced ~320 g ZnS without process optimization or replacement of used medium; this quantity would be sufficient to form a ZnS thin film with ~120 nm thickness over 0.5 m width × 13 km length. At all scales, the bacteria produced significant amounts of acetic, lactic, and formic acids, which could be neutralized by the controlled addition of sodium hydroxide without the use of an organic pH buffer, eliminating 98 % of the buffer chemical costs. The final NP products were characterized using XRD, ICP-OES, TEM, FTIR, PL, DLS, HPLC, and C/N analyses, which confirmed that the growth medium without organic buffer enhanced the ZnS NP properties by reducing carbon and nitrogen surface coatings and supporting better dispersivity with similar ACS.

Diurnal shifts in co-distributions of sulfide and iron(II) and profiles of phosphate and ammonium in the rhizosphere of Zostera capricorni

NASA Astrophysics Data System (ADS)

Pagès, Anaïs; Welsh, David T.; Robertson, David; Panther, Jared G.; Schäfer, Jörg; Tomlinson, Rodger B.; Teasdale, Peter R.

2012-12-01

High resolution, two dimensional distributions of porewater iron(II) and sulfide were measured, using colourimetric DET (diffusive equilibration in a thin film) and DGT (diffusive gradients in a thin film) techniques, respectively, in Zostera capricorni colonised sediments under both light and dark conditions. Low resolution depth profiles of ammonium and phosphate were measured using conventional DET and DGT methods, respectively. Porewater iron(II) and sulfide distributions showed a high degree of spatial heterogeneity under both light and dark conditions, and distributions were characterised by a complex mosaic of sediment zones dominated by either iron(II) or sulfide. However, there was a clear shift in overall redox conditions between light and dark conditions. During light deployments, iron(II) and sulfide concentrations were generally low throughout the rhizosphere, apart from a few distinct "hotspots" of high concentration. Whereas during dark deployments, high concentrations of iron(II) were sometimes measured in the near surface sediments and sulfide depth distributions migrated towards the sediment surface. Profiles of porewater ammonium and phosphate demonstrated an increase in ammonium concentrations under dark compared to light conditions. Surprisingly, despite the large changes in iron(II) distributions between light and dark conditions, phosphate profiles remained similar, indicating that adsorption/release of phosphate by iron(III) hydr(oxide) mineral formation and reduction was not a major factor regulating porewater phosphate concentrations in these sediments or that phosphate uptake by the seagrass roots persisted during the dark period. Overall, the results demonstrate that the photosynthetic activity of the seagrass played a significant role in regulating sulfide, iron(II) and ammonium concentrations in the rhizosphere, due to rates of radial oxygen loss and ammonium uptake by the roots and rhizomes being lower under dark compared to light conditions. This cyclic production and reduction of iron(III) hydr(oxides) in the rhizosphere may act as a buffering system preventing sulfide accumulation.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

NiFeCo/Cu superlattices with high magnetoresistive sensitivity and weak hysteresis

NASA Astrophysics Data System (ADS)

Bannikova, N. S.; Milyaev, M. A.; Naumova, L. I.; Krinitsina, T. P.; Patrakov, E. I.; Proglyado, V. V.; Chernyshova, T. A.; Ustinov, V. V.

2016-10-01

The microstructure and the magetoresistive characteristics of [NiFeCo/Cu]8 superlattices prepared by magnetron sputtering with various thickness of the buffer NiFeCr layer and exhibiting a giant magnetoresistive effect have been studied. It has been found that these nanostructures are formed with a strong or weak hysteresis depending on the structure (bcc or fcc) formed in the NiFeCr buffer layer. The method of the substantial decrease in the hysteresis loop width of the magnetoresistance by using the composite Ta/NiFeCr buffer layer has been suggested.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

NASA Astrophysics Data System (ADS)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

NASA Astrophysics Data System (ADS)

Hu, Bo; He, Wei; Ye, Jun; Tang, Jin; Syed Sheraz, Ahmad; Zhang, Xiang-Qun; Cheng, Zhao-Hua

2015-01-01

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, and 11274033), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005).

Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saravanan, K., E-mail: saravanan@igcar.gov.in; Jayalakshmi, G.; Krishnan, R.

We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influencemore » of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.« less

Design of optimal buffer layers for CuInGaSe2 thin-film solar cells(Conference Presentation)

NASA Astrophysics Data System (ADS)

Lordi, Vincenzo; Varley, Joel B.; He, Xiaoqing; Rockett, Angus A.; Bailey, Jeff; Zapalac, Geordie H.; Mackie, Neil; Poplavskyy, Dmitry; Bayman, Atiye

2016-09-01

Optimizing the buffer layer in manufactured thin-film PV is essential to maximize device efficiency. Here, we describe a combined synthesis, characterization, and theory effort to design optimal buffers based on the (Cd,Zn)(O,S) alloy system for CIGS devices. Optimization of buffer composition and absorber/buffer interface properties in light of several competing requirements for maximum device efficiency were performed, along with process variations to control the film and interface quality. The most relevant buffer properties controlling performance include band gap, conduction band offset with absorber, dopability, interface quality, and film crystallinity. Control of an all-PVD deposition process enabled variation of buffer composition, crystallinity, doping, and quality of the absorber/buffer interface. Analytical electron microscopy was used to characterize the film composition and morphology, while hybrid density functional theory was used to predict optimal compositions and growth parameters based on computed material properties. Process variations were developed to produce layers with controlled crystallinity, varying from amorphous to fully epitaxial, depending primarily on oxygen content. Elemental intermixing between buffer and absorber, particularly involving Cd and Cu, also is controlled and significantly affects device performance. Secondary phase formation at the interface is observed for some conditions and may be detrimental depending on the morphology. Theoretical calculations suggest optimal composition ranges for the buffer based on a suite of computed properties and drive process optimizations connected with observed film properties. Prepared by LLNL under Contract DE-AC52-07NA27344.

Mechanistic study of the rubber-brass adhesion interphase

NASA Astrophysics Data System (ADS)

Ashirgade, Akshay

Brass-plated steel tire cords form an essential strengthening component of a radial automobile tire. Adhesion between rubber compound and brass-plated steel tire cord is crucial in governing the overall performance of tires. The rubber-brass interfacial adhesion is influenced by the chemical composition and thickness of the interfacial layer. It has been shown that the interfacial layer consists mainly of sulfides and oxides of copper and zinc. This thesis discusses the effect of changes in the chemical composition and the structure of the interfacial layers due to addition of adhesion promoter resins. Grazing incidence X-Ray Diffraction (GIXRD) experiments were run on sulfidized polished brass coupons previously bonded to six experimental rubber compounds. It was confirmed that heat and humidity conditions lead to physical and chemical changes of the rubber-steel tire cord interfacial layer, closely related to the degree of rubber-brass adhesion. Morphological transformation of the interfacial layer led to loss of adhesion after aging. The adhesion promoter resins inhibit unfavorable morphological changes in the interfacial layer thus stabilizing it during aging and prolonging failure. Tire cord adhesion tests illustrated that the one-component resins improved adhesion after aging using a rubber compound with lower cobalt loading. Based on the acquired diffraction profiles, these resins were also found to impede crystallization of the sulfide layer after aging leading to improved adhesion. Secondary Ion Mass Spectrometry (SIMS) depth profiles, SEM micrographs and AFM images strongly corroborated the findings from GIXRD. FTIR was utilized in a novel way to understand the degradation mechanism due to aging. A model for rubber and interfacial layer degradation is proposed to illustrate the effect of aging and the one-component resins. This interfacial analysis adds valuable new information to our understanding of the complex nature of the rubber-brass bonding mechanism.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Aligned crystalline semiconducting film on a glass substrate and method of making

DOEpatents

Findikoglu, Alp T.

2010-08-24

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goyal, Amit; Shin, Junsoo

A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

PubMed

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

NASA Astrophysics Data System (ADS)

Xin, Peipei

Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction interface still limited the device performance. Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options - CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

Raman study of supported molybdenum disulfide single layers

NASA Astrophysics Data System (ADS)

Durrer, William; Manciu, Felicia; Afanasiev, Pavel; Berhault, Gilles; Chianelli, Russell

2008-10-01

Owing to the increasing demand for clean transportation fuels, highly dispersed single layer transition metal sulfides such as MoS2-based catalysts play an important role in catalytic processes for upgrading and removing sulfur from heavy petroleum feed. In its crystalline bulk form, MoS2 is chemically rather inactive due to a strong tendency to form highly stacked layers, but, when dispersed as single-layer nanoclusters on a support, the MoS2 becomes catalytically active in the hydrogenolysis of sulphur and nitrogen from organic compounds (hydrotreating catalysis). In the present studies alumina-supported MoS2 samples were analyzed by confocal Raman spectroscopy. Evidence of peaks at 152 cm-1, 234 cm-1, and 336 cm-1, normally not seen in the Raman spectrum of the standard bulk crystal, confirms the formation of single layers of MoS2. Furthermore, the presence of the 383 cm-1 Raman line suggests the trigonal prismatic coordination of the formed MoS2 single layers. Depending on the sample preparation method, a restacking of MoS2 layers is also observed, mainly for ex-thiomolybdate samples sulfided at 550 C.

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

PubMed

Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

2016-02-10

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Oxygenic and anoxygenic photosynthesis in a microbial mat from an anoxic and sulfidic spring.

PubMed

de Beer, Dirk; Weber, Miriam; Chennu, Arjun; Hamilton, Trinity; Lott, Christian; Macalady, Jennifer; M Klatt, Judith

2017-03-01

Oxygenic and anoxygenic photosynthesis were studied with microsensors in microbial mats found at 9-10 m depth in anoxic and sulfidic water in Little Salt Spring (Florida, USA). The lake sediments were covered with a 1-2 mm thick red mat dominated by filamentous Cyanobacteria, below which Green Sulfur Bacteria (GSB, Chlorobiaceae) were highly abundant. Within 4 mm inside the mats, the incident radiation was attenuated to undetectable levels. In situ microsensor data showed both oxygenic photosynthesis in the red surface layer and light-induced sulfide dynamics up to 1 cm depth. Anoxygenic photosynthesis occurred during all daylight hours, with complete sulfide depletion around midday. Oxygenic photosynthesis was limited to 4 h per day, due to sulfide inhibition in the early morning and late afternoon. Laboratory measurements on retrieved samples showed that oxygenic photosynthesis was fully but reversibly inhibited by sulfide. In patches Fe(III) alleviated the inhibition of oxygenic photosynthesis by sulfide. GSB were resistant to oxygen and showed a low affinity to sulfide. Their light response showed saturation at very low intensities. © 2016 The Authors. Environmental Microbiology published by Society for Applied Microbiology and John Wiley & Sons Ltd.

Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Putri, W. B. K.; Tran, D. H.; Kang, B., E-mail: bwkang@chungbuk.ac.kr

2014-03-07

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} droppingmore » went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.« less

Mineralogical and geochemical characterization of supergene Cu-Pb-Zn-V ores in the Oriental High Atlas, Morocco

NASA Astrophysics Data System (ADS)

Verhaert, Michèle; Bernard, Alain; Dekoninck, Augustin; Lafforgue, Ludovic; Saddiqi, Omar; Yans, Johan

2017-10-01

In the Moroccan High Atlas, two sulfide deposits hosted by Jurassic dolostones underwent significant weathering. In the Cu deposit of Jbel Klakh, several stages of supergene mineralization are distinguished: (1) the replacement of hypogene sulfides in the protolith (chalcopyrite) by secondary sulfides in the cementation zone (bornite, digenite, chalcocite, covellite), (2) the formation of oxidized minerals in the saprolite (malachite, azurite, brochantite) where the environment becomes more oxidizing and neutral, and (3) the precipitation of late carbonates (calcite) and iron (hydr-)oxides in the laterite. The precipitation of carbonates is related to the dissolution of dolomitic host rocks, which buffers the fluid acidity due to the oxidation of sulfides. In the Jbel Haouanit Pb-Zn deposit, the mineral assemblage is dominated by typical calamine minerals, Cu minerals (chalcocite, covellite, malachite), and a Cu-Pb-Zn vanadate (mottramite). Galena is successively weathered in anglesite and cerussite. Sphalerite is weathered in smithsonite, which is rapidly replaced by hydrozincite. Late iron (hydr-)oxides are mainly found at the top of both deposits (laterite). Both deposits are thus characterized by specific mineral zoning, from laterite to protolith, related to variations in the mineralogy and ore grades and probably caused by varying Eh-pH conditions.

Revegetation of Acid Rock Drainage (ARD) Producing Slope Surface Using Phosphate Microencapsulation and Artificial Soil

NASA Astrophysics Data System (ADS)

Kim, Jae Gon

2017-04-01

Oxidation of sulfides produces acid rock drainage (ARD) upon their exposure to oxidation environment by construction and mining activities. The ARD causes the acidification and metal contamination of soil, surface water and groundwater, the damage of plant, the deterioration of landscape and the reduction of slope stability. The revegetation of slope surface is one of commonly adopted strategies to reduce erosion and to increase slope stability. However, the revegetation of the ARD producing slope surface is frequently failed due to its high acidity and toxic metal content. We developed a revegetation method consisting of microencapsualtion and artificial soil in the laboratory. The revegetation method was applied on the ARD producing slope on which the revegetation using soil coverage and seeding was failed and monitored the plant growth for one year. The phosphate solution was applied on sulfide containing rock to form stable Fe-phosphate mineral on the surface of sulfide, which worked as a physical barrier to prevent contacting oxidants such as oxygen and Fe3+ ion to the sulfide surface. After the microencapsulation, two artificial soil layers were constructed. The first layer containing organic matter, dolomite powder and soil was constructed at 2 cm thickness to neutralize the rising acidic capillary water from the subsurface and to remove the dissolved oxygen from the percolating rain water. Finally, the second layer containing seeds, organic matter, nutrients and soil was constructed at 3 cm thickness on the top. After application of the method, the pH of the soil below the artificial soil layer increased and the ARD production from the rock fragments reduced. The plant growth showed an ordinary state while the plant died two month after germination for the previous revegetation trial. No soil erosion occurred from the slope during the one year field test.

Deposition of zinc sulfide thin films by chemical bath process

NASA Astrophysics Data System (ADS)

Oladeji, Isaiah O.; Chow, Lee

1996-11-01

Deposition of high quality zinc sulfide (ZnS) thin film over a large area is required if it is to be effectively used in electroluminescent devices, solar cells, and other optoelectronic devices. Of all deposition techniques, chemical bath deposition (CBD) is the least costly technique that meets the above requirements. Recently it is found that the growth of ZnS film, of thickness less than 100 nm in a single dip, by CBD is facilitated by the use of ammonia and hydrazine as complexing agents. Here we report that the thickness of the deposited ZnS film can be increased if ammonium salt is used as a buffer. We also present an analytical study to explain our results and to further understand the ZnS growth process in CBD.

An experimental study of Fe-Ni exchange between sulfide melt and olivine at upper mantle conditions: implications for mantle sulfide compositions and phase equilibria

NASA Astrophysics Data System (ADS)

Zhang, Zhou; von der Handt, Anette; Hirschmann, Marc M.

2018-03-01

The behavior of nickel in the Earth's mantle is controlled by sulfide melt-olivine reaction. Prior to this study, experiments were carried out at low pressures with narrow range of Ni/Fe in sulfide melt. As the mantle becomes more reduced with depth, experiments at comparable conditions provide an assessment of the effect of pressure at low-oxygen fugacity conditions. In this study, we constrain the Fe-Ni composition of molten sulfide in the Earth's upper mantle via sulfide melt-olivine reaction experiments at 2 GPa, 1200 and 1400 °C, with sulfide melt X_{{{Ni}}}^{{{Sulfide}}}={{Ni}}/{{Ni+{Fe}}} (atomic ratio) ranging from 0 to 0.94. To verify the approach to equilibrium and to explore the effect of {f_{{{O}2}}} on Fe-Ni exchange between phases, four different suites of experiments were conducted, varying in their experimental geometry and initial composition. Effects of Ni secondary fluorescence on olivine analyses were corrected using the PENELOPE algorithm (Baró et al., Nucl Instrum Methods Phys Res B 100:31-46, 1995), "zero time" experiments, and measurements before and after dissolution of surrounding sulfides. Oxygen fugacities in the experiments, estimated from the measured O contents of sulfide melts and from the compositions of coexisting olivines, were 3.0 ± 1.0 log units more reduced than the fayalite-magnetite-quartz (FMQ) buffer (suite 1, 2 and 3), and FMQ - 1 or more oxidized (suite 4). For the reduced (suites 1-3) experiments, Fe-Ni distribution coefficients K_{{D}}{}={(X_{{{Ni}}}^{{{sulfide}}}/X_{{{Fe}}}^{{{sulfide}}})}/{(X_{{{Ni}}^{{{olivine}}}/X_{{{Fe}}}^{{{olivine}}})}} are small, averaging 10.0 ± 5.7, with little variation as a function of total Ni content. More oxidized experiments (suite 4) give larger values of K D (21.1-25.2). Compared to previous determinations at 100 kPa, values of K D from this study are chiefly lower, in large part owing to the more reduced conditions of the experiments. The observed difference does not seem attributable to differences in temperature and pressure between experimental studies. It may be related in part to the effects of metal/sulfur ratio in sulfide melt. Application of these results to the composition of molten sulfide in peridotite indicates that compositions are intermediate in composition (X_{{{Ni}}}^{{{sulfide}}} 0.4-0.6) in the shallow mantle at 50 km, becomes more Ni rich with depth as the O content of the melt diminishes, reaching a maximum (0.6-0.7) at depths near 80-120 km, and then becomes more Fe rich in the deeper mantle where conditions are more reduced, approaching (X_{{{Ni}}}^{{{sulfide}}} 0.28) > 140 km depth. Because Ni-rich sulfide in the shallow upper mantle melts at lower temperature than more Fe-rich compositions, mantle sulfide is likely molten in much of the deep continental lithosphere, including regions of diamond formation.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Strained layer Fabry-Perot device

DOEpatents

Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

1994-01-01

An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

Influence of iron sulfides on abiotic oxidation of UO2 by nitrite and dissolved oxygen in natural sediments.

PubMed

Carpenter, Julian; Bi, Yuqiang; Hayes, Kim F

2015-01-20

Iron sulfide precipitates formed under sulfate reducing conditions may buffer U(IV) insoluble solid phases from reoxidation after oxidants re-enter the reducing zone. In this study, sediment column experiments were performed to quantify the effect of biogenic mackinawite on U(IV) stability in the presence of nitrite or dissolved oxygen (DO). Two columns, packed with sediment from an abandoned U contaminated mill tailings site near Rifle, CO, were biostimulated for 62 days with an electron donor (3 mM acetate) in the presence (BRS+) and absence (BRS−) of 7 mM sulfate. The bioreduced sediment was supplemented with synthetic uraninite (UO2(s)), sterilized by gamma-irradiation, and then subjected to a sequential oxidation by nitrite and DO. Biogenic iron sulfides produced in the BRS+ column, mostly as mackinawite, inhibited U(IV) reoxidation and mobilization by both nitrite and oxygen. Most of the influent nitrite (0.53 mM) exited the columns without oxidizing UO2, while a small amount of nitrite was consumed by iron sulfides precipitates. An additional 10-day supply of 0.25 mM DO influent resulted in the release of about 10% and 49% of total U in BRS+ and BRS– columns, respectively. Influent DO was effectively consumed by biogenic iron sulfides in the BRS+ column, while DO and a large U spike were detected after only a brief period in the effluent in the BRS– column.

Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.

PubMed

Park, Seoung-Hwan; Mishra, Dhaneshwar; Eugene Pak, Y; Kang, K; Park, Chang Yong; Yoo, Seung-Hyun; Cho, Yong-Hee; Shim, Mun-Bo; Kim, Sungjin

2014-06-16

Partial strain relaxation effects on polarization ratio of semipolar (112̄2) InxGa1−xN/GaN quantum well (QW) structures grown on relaxed InGaN buffers were investigated using the multiband effective-mass theory. The absolute value of the polarization ratio gradually decreases with increasing In composition in InGaN buffer layer when the strain relaxation ratio (ε0y′y′−εy′y′)/ε0y′y′ along y′-axis is assumed to be linearly proportional to the difference of lattice constants between the well and the buffer layer. Also, it changes its sign for the QW structure grown on InGaN buffer layer with a relatively larger In composition (x > 0.07). These results are in good agreement with the experiment. This can be explained by the fact that, with increasing In composition in the InGaN subsrate, the spontaneous emission rate for the y′-polarization gradually increases while that for x′-polarization decreases due to the decrease in a matrix element at the band-edge (k‖ = 0).

Buffer layers on biaxially textured metal substrates

DOEpatents

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2001-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Method to adjust multilayer film stress induced deformation of optics

DOEpatents

Mirkarimi, Paul B.; Montcalm, Claude

2000-01-01

A buffer-layer located between a substrate and a multilayer for counteracting stress in the multilayer. Depositing a buffer-layer having a stress of sufficient magnitude and opposite in sign reduces or cancels out deformation in the substrate due to the stress in the multilayer. By providing a buffer-layer between the substrate and the multilayer, a tunable, near-zero net stress results, and hence results in little or no deformation of the substrate, such as an optic for an extreme ultraviolet (EUV) lithography tool. Buffer-layers have been deposited, for example, between Mo/Si and Mo/Be multilayer films and their associated substrate reducing significantly the stress, wherein the magnitude of the stress is less than 100 MPa and respectively near-normal incidence (5.degree.) reflectance of over 60% is obtained at 13.4 nm and 11.4 nm. The present invention is applicable to crystalline and non-crystalline materials, and can be used at ambient temperatures.

Reductive reactivity of iron(III) oxides in the east china sea sediments: characterization by selective extraction and kinetic dissolution.

PubMed

Chen, Liang-Jin; Zhu, Mao-Xu; Yang, Gui-Peng; Huang, Xiang-Li

2013-01-01

Reactive Fe(III) oxides in gravity-core sediments collected from the East China Sea inner shelf were quantified by using three selective extractions (acidic hydroxylamine, acidic oxalate, bicarbonate-citrate buffered sodium dithionite). Also the reactivity of Fe(III) oxides in the sediments was characterized by kinetic dissolution using ascorbic acid as reductant at pH 3.0 and 7.5 in combination with the reactive continuum model. Three parameters derived from the kinetic method: m 0 (theoretical initial amount of ascorbate-reducible Fe(III) oxides), k' (rate constant) and γ (heterogeneity of reactivity), enable a quantitative characterization of Fe(III) oxide reactivity in a standardized way. Amorphous Fe(III) oxides quantified by acidic hydroxylamine extraction were quickly consumed in the uppermost layer during early diagenesis but were not depleted over the upper 100 cm depth. The total amounts of amorphous and poorly crystalline Fe(III) oxides are highly available for efficient buffering of dissolved sulfide. As indicated by the m 0, k' and γ, the surface sediments always have the maximum content, reactivity and heterogeneity of reactive Fe(III) oxides, while the three parameters simultaneously downcore decrease, much more quickly in the upper layer than at depth. Albeit being within a small range (within one order of magnitude) of the initial rates among sediments at different depths, incongruent dissolution could result in huge discrepancies of the later dissolution rates due to differentiating heterogeneity, which cannot be revealed by selective extraction. A strong linear correlation of the m 0 at pH 3.0 with the dithionite-extractable Fe(III) suggests that the m 0 may represent Fe(III) oxide assemblages spanning amorphous and crystalline Fe(III) oxides. Maximum microbially available Fe(III) predicted by the m 0 at pH 7.5 may include both amorphous and a fraction of other less reactive Fe(III) phases.

Reductive Reactivity of Iron(III) Oxides in the East China Sea Sediments: Characterization by Selective Extraction and Kinetic Dissolution

PubMed Central

Chen, Liang-Jin; Zhu, Mao-Xu; Yang, Gui-Peng; Huang, Xiang-Li

2013-01-01

Reactive Fe(III) oxides in gravity-core sediments collected from the East China Sea inner shelf were quantified by using three selective extractions (acidic hydroxylamine, acidic oxalate, bicarbonate-citrate buffered sodium dithionite). Also the reactivity of Fe(III) oxides in the sediments was characterized by kinetic dissolution using ascorbic acid as reductant at pH 3.0 and 7.5 in combination with the reactive continuum model. Three parameters derived from the kinetic method: m 0 (theoretical initial amount of ascorbate-reducible Fe(III) oxides), k′ (rate constant) and γ (heterogeneity of reactivity), enable a quantitative characterization of Fe(III) oxide reactivity in a standardized way. Amorphous Fe(III) oxides quantified by acidic hydroxylamine extraction were quickly consumed in the uppermost layer during early diagenesis but were not depleted over the upper 100 cm depth. The total amounts of amorphous and poorly crystalline Fe(III) oxides are highly available for efficient buffering of dissolved sulfide. As indicated by the m 0, k′ and γ, the surface sediments always have the maximum content, reactivity and heterogeneity of reactive Fe(III) oxides, while the three parameters simultaneously downcore decrease, much more quickly in the upper layer than at depth. Albeit being within a small range (within one order of magnitude) of the initial rates among sediments at different depths, incongruent dissolution could result in huge discrepancies of the later dissolution rates due to differentiating heterogeneity, which cannot be revealed by selective extraction. A strong linear correlation of the m 0 at pH 3.0 with the dithionite-extractable Fe(III) suggests that the m 0 may represent Fe(III) oxide assemblages spanning amorphous and crystalline Fe(III) oxides. Maximum microbially available Fe(III) predicted by the m 0 at pH 7.5 may include both amorphous and a fraction of other less reactive Fe(III) phases. PMID:24260377

Co-settling of Chromite and Sulfide Melt Droplets and Trace Element Partitioning between Sulfide and Silicate Melts

NASA Astrophysics Data System (ADS)

Manoochehri, S.; Schmidt, M. W.; Guenther, D.

2013-12-01

Gravitational settling of immiscible, dense sulfide melt droplets together with other cumulate phases such as chromite, combined with downward percolation of these droplets through a cumulate pile, is thought to be one of the possible processes leading to the formation of PGE rich sulfide deposits in layered mafic intrusions. Furthermore some chromitite seams in the Merensky Reef (Bushveld Complex) are considered to be acting as a filter or barrier for further downward percolation of sulfide melts into footwall layers. To investigate the feasibility of such mechanical processes and to study the partitioning behavior of 50 elements including transition metals and REEs (but not PGEs) between a silicate and a sulfide melt, two separate series of high temperature (1250-1380 °C) centrifuge-assisted experiments at 1000 g, 0.4-0.6 GPa were conducted. A synthetic silicate glass with a composition representative of the parental magma of the Bushveld Complex (~ 55 wt% SiO2) was mixed with pure FeS powder. For the first series of experiments, 15 or 25 wt% natural chromite with average grain sizes of ~ 5 or 31 μm were added to a mixture of silicate glass and FeS (10 wt%) adding 1 wt% water. For the second series, a mixture of the same glass and FeS was doped with 50 trace elements. These mixtures were first statically equilibrated and then centrifuged. In the first experimental series, sulfide melt droplets settled together with, but did not segregate from chromite grains even after centrifugation at 1000 g for 12 hours. A change in initial chromite grain size and proportions didn't have any effect on segregation. Without chromite, the starting mixture resulted in the formation of large sulfide melt pools together with finer droplets still disseminated through the silicate glass and both at the bottom of the capsule. The incomplete segregation of sulfide melt is interpreted as being due to high interfacial energies between sulfide and silicate melts/crystals which hinder both, the nucleation of newly formed sulfide droplets and the interconnectivity of separate droplets. The interfacial energies between sulfide melt and silicate or oxide crystals is even higher than for silicate melt, consequently in experiments with chromite, sulfide segregation is even more hindered. Partition coefficients of 50 elements between a sulfide and a silicate melt are determined as a function of differing temperature between 1250 - 1380 °C. As a proxy to investigate the bond strength of network modifier cations, the relation between the partition coefficients and ionic potentials of different groups of elements has been determined.

Redox reactions and weak buffering capacity lead to acidification in the Chesapeake Bay.

PubMed

Cai, Wei-Jun; Huang, Wei-Jen; Luther, George W; Pierrot, Denis; Li, Ming; Testa, Jeremy; Xue, Ming; Joesoef, Andrew; Mann, Roger; Brodeur, Jean; Xu, Yuan-Yuan; Chen, Baoshan; Hussain, Najid; Waldbusser, George G; Cornwell, Jeffrey; Kemp, W Michael

2017-08-28

The combined effects of anthropogenic and biological CO 2 inputs may lead to more rapid acidification in coastal waters compared to the open ocean. It is less clear, however, how redox reactions would contribute to acidification. Here we report estuarine acidification dynamics based on oxygen, hydrogen sulfide (H 2 S), pH, dissolved inorganic carbon and total alkalinity data from the Chesapeake Bay, where anthropogenic nutrient inputs have led to eutrophication, hypoxia and anoxia, and low pH. We show that a pH minimum occurs in mid-depths where acids are generated as a result of H 2 S oxidation in waters mixed upward from the anoxic depths. Our analyses also suggest a large synergistic effect from river-ocean mixing, global and local atmospheric CO 2 uptake, and CO 2 and acid production from respiration and other redox reactions. Together they lead to a poor acid buffering capacity, severe acidification and increased carbonate mineral dissolution in the USA's largest estuary.The potential contribution of redox reactions to acidification in coastal waters is unclear. Here, using measurements from the Chesapeake Bay, the authors show that pH minimum occurs at mid-depths where acids are produced via hydrogen sulfide oxidation in waters mixed upward from anoxic depths.

Polarization induced doped transistor

DOEpatents

Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

2016-06-07

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Layer-based buffer aware rate adaptation design for SHVC video streaming

NASA Astrophysics Data System (ADS)

Gudumasu, Srinivas; Hamza, Ahmed; Asbun, Eduardo; He, Yong; Ye, Yan

2016-09-01

This paper proposes a layer based buffer aware rate adaptation design which is able to avoid abrupt video quality fluctuation, reduce re-buffering latency and improve bandwidth utilization when compared to a conventional simulcast based adaptive streaming system. The proposed adaptation design schedules DASH segment requests based on the estimated bandwidth, dependencies among video layers and layer buffer fullness. Scalable HEVC video coding is the latest state-of-art video coding technique that can alleviate various issues caused by simulcast based adaptive video streaming. With scalable coded video streams, the video is encoded once into a number of layers representing different qualities and/or resolutions: a base layer (BL) and one or more enhancement layers (EL), each incrementally enhancing the quality of the lower layers. Such layer based coding structure allows fine granularity rate adaptation for the video streaming applications. Two video streaming use cases are presented in this paper. The first use case is to stream HD SHVC video over a wireless network where available bandwidth varies, and the performance comparison between proposed layer-based streaming approach and conventional simulcast streaming approach is provided. The second use case is to stream 4K/UHD SHVC video over a hybrid access network that consists of a 5G millimeter wave high-speed wireless link and a conventional wired or WiFi network. The simulation results verify that the proposed layer based rate adaptation approach is able to utilize the bandwidth more efficiently. As a result, a more consistent viewing experience with higher quality video content and minimal video quality fluctuations can be presented to the user.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

Petrogenesis of the Pd-rich intrusion at Salt Chuck, Prince of Wales island: an early Paleozoic Alaskan-type ultramafic body

USGS Publications Warehouse

Loney, R.A.; Himmelberg, G.R.

1992-01-01

The early Paleozoic Salt Chuck intrusion has petrographic and chemical characteristics that are similar to those of Cretaceous Alaskan-type ultramafic-mafic bodies. The intrusion is markedly discordant to the structure of the early Paleozoic Descon Formation, in which it has produced a rather indistinct contact aureole a few meters wide. Mineral assemblages, sequence of crystallization, and mineral chemistry suggest that the intrusion crystallized under low pressures (~2 kbar) with oxidation conditions near those of the NNO buffer, from a hydrous, silica-saturated, orthopyroxene-normative parental magma. The Salt Chuck deposit was probably formed by a two-stage process: 1) a stage of magmatic crystallization in which the sulfides and PGE accumulated in a disseminated manner in cumulus deposits, possibly largely in the gabbro, and 2) a later magmatic-hydrothermal stage during which the sulfides and PGE were remobilized and concentrated in veins and fracture-fillings. In this model, the source of the sulfides and PGE was the magma that produced the Salt Chuck intrusion. -from Authors

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

NASA Astrophysics Data System (ADS)

Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

2012-10-01

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Experimental observation of motion of edge dislocations in Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolkhovityanov, Yu. B., E-mail: bolkhov@isp.nsc.ru; Gutakovskii, A. K.; Deryabin, A. S.

2016-11-15

The Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge{sub x}Si{sub 1–x} buffer layer is 7–35 nm. It is shown that such heterostructures relax in two stages: an ordered network of edge dislocations is formed during their growth (500°C) at the Ge/GeSi interface and then, contrary to the generally accepted opinion concerning their immobility, some of the edge dislocations move through the buffer GeSi layer to the GeSi/Si(001) interface during annealing at higher temperatures and x > 0.3. It is found thatmore » plastic relaxation of the GeSi buffer layer occurs due to motion of dislocation complexes of the edge type, consisting of a pair of complementary 60° dislocations with the ends of (111) extra planes located approximately at a distance from 2 to 12 interplanar spacings. It is shown that the penetration of dislocation complexes into the GeSi buffer layer and further to the GeSi/Si interface is intensified with increasing annealing temperature (600–800°C) and the fraction of Ge in the buffer layer.« less

Catalytic hydrotreating process

DOEpatents

Karr, Jr., Clarence; McCaskill, Kenneth B.

1978-01-01

Carbonaceous liquids boiling above about 300.degree. C such as tars, petroleum residuals, shale oils and coal-derived liquids are catalytically hydrotreated by introducing the carbonaceous liquid into a reaction zone at a temperature in the range of 300.degree. to 450.degree. C and a pressure in the range of 300 to 4000 psig for effecting contact between the carbonaceous liquid and a catalytic transition metal sulfide in the reaction zone as a layer on a hydrogen permeable transition metal substrate and then introducing hydrogen into the reaction zone by diffusing the hydrogen through the substrate to effect the hydrogenation of the carbonaceous liquid in the presence of the catalytic sulfide layer.

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Sol-gel deposition of buffer layers on biaxially textured metal substances

DOEpatents

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1-xAs buffers

NASA Astrophysics Data System (ADS)

Chen, X. Y.; Gu, Y.; Zhang, Y. G.; Ma, Y. J.; Du, B.; Zhang, J.; Ji, W. Y.; Shi, Y. H.; Zhu, Y.

2018-04-01

Improved quality of gas source molecular beam epitaxy grown In0.83Ga0.17As layer on GaAs substrate was achieved by adopting a two-step InxAl1-xAs metamorphic buffer at different temperatures. With a high-temperature In0.83Al0.17As template following a low-temperature composition continuously graded InxAl1-xAs (x = 0.05-0.86) buffer, better structural, optical and electrical properties of succeeding In0.83Ga0.17As were confirmed by atomic force microscopy, photoluminescence and Hall-effect measurements. Cross-sectional transmission electron microscopy revealed significant effect of the two-step temperature grown InAlAs buffer layers on the inhibition of threading dislocations due to the deposition of high density nuclei on GaAs substrate at the low growth temperature. The limited reduction for the dark current of GaAs-based In0.83Ga0.17As photodetectors on the two-step temperature grown InxAl1-xAs buffer layers was ascribed to the contribution of impurities caused by the low growth temperature of InAlAs buffers.

Model for threading dislocations in metamorphic tandem solar cells on GaAs (001) substrates

NASA Astrophysics Data System (ADS)

Song, Yifei; Kujofsa, Tedi; Ayers, John E.

2018-02-01

We present an approximate model for the threading dislocations in III-V heterostructures and have applied this model to study the defect behavior in metamorphic triple-junction solar cells. This model represents a new approach in which the coefficient for second-order threading dislocation annihilation and coalescence reactions is considered to be determined by the length of misfit dislocations, LMD, in the structure, and we therefore refer to it as the LMD model. On the basis of this model we have compared the average threading dislocation densities in the active layers of triple junction solar cells using linearly-graded buffers of varying thicknesses as well as S-graded (complementary error function) buffers with varying thicknesses and standard deviation parameters. We have shown that the threading dislocation densities in the active regions of metamorphic tandem solar cells depend not only on the thicknesses of the buffer layers but on their compositional grading profiles. The use of S-graded buffer layers instead of linear buffers resulted in lower threading dislocation densities. Moreover, the threading dislocation densities depended strongly on the standard deviation parameters used in the S-graded buffers, with smaller values providing lower threading dislocation densities.

Chromatographic separation of the platinum-group elements, gold, base metals and sulfur during degassing of a compacting and solidifying igneous crystal pile

NASA Astrophysics Data System (ADS)

Boudreau, A. E.; Meurer, W. P.

The major platinum-group elements (PGE) concentrations in layered intrusions are typically associated with zones in which the sulfide abundance begins to increase. In a number of layered intrusions, there is also a distinct stratigraphic separation in the peak concentrations of the PGE from those of the base metals, gold and sulfur through these zones. These stratigraphic ``offsets'' are characterized by a lower, typically S-poor, Pt- and Pd-enriched zone overlain by a zone enriched in the base metals, S and Au. The separations amount to a few decimeters to several tens of meters. In some instances, the high Pt and Pd concentrations are associated with trivial amounts of sulfide. Theoretical considerations suggest that these offsets can be modeled as chromatographic peaks that develop during an infiltration/reaction process. Using Pd as a typical PGE and Cu as a typical base metal, a numeric model is developed that illustrates how metal separations can develop in a vapor-refining zone as fluid evolved during solidification of a cumulus pile leaches sulfide and redeposits it higher in the crystal pile. The solidification/degassing ore-element transport is coupled with a compaction model for the crystal pile. Solidification resulting from conductive cooling through the base of the compacting column leads to an increasing volatile concentration in the intercumulus liquid until it reaches fluid saturation. Separation and upward migration of this fluid lead to an upward-migrating zone of increasingly higher bulk water contents as water degassed from underlying cumulates enriches overlying, fluid-undersaturated interstitial liquids. Sulfide is resorbed from the degassing regions and is reprecipitated in these vapor-undersaturated interstitial liquids, producing a zone of relatively high modal sulfide that also migrates upward with time. Owing to its strong preference for sulfide, Pd is not significantly mobile until all sulfide is resorbed. The result is a zone of increasing PGE enrichment that follows the sulfide resorption front as solidification/degassing continues. In detail, the highest Pd concentrations occur stratigraphically below the peak in S and base metals. The high Pd/S ratio mimics values conventionally interpreted as the result of high (silicate liquid)/(sulfide liquid) mass ratios (``R'' values). However, in this case, the high Pd/S ratio is the result of a chromatographic/reaction front enrichment and not a magmatic sulfide-saturation event.

Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

2016-03-01

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun

2015-10-05

We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness,more » which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.« less

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

PubMed Central

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-01-01

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

Propagation of misfit dislocations from buffer/Si interface into Si

DOEpatents

Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

2011-08-30

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

PubMed Central

Jaramillo, Rafael; Steinmann, Vera; Yang, Chuanxi; Hartman, Katy; Chakraborty, Rupak; Poindexter, Jeremy R.; Castillo, Mariela Lizet; Gordon, Roy; Buonassisi, Tonio

2015-01-01

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices. PMID:26067454

Soil contamination with emissions of non-ferrous metallurgical plants

NASA Astrophysics Data System (ADS)

Vodyanitskii, Yu. N.; Plekhanova, I. O.; Prokopovich, E. V.; Savichev, A. T.

2011-02-01

The upper soil horizons are strongly contaminated in the area influenced by the Mid-Urals copper smelter. In the technogenic desert and impact zones, the contents of a number of elements (Cu, Zn, As, Pb, P, and S) by many times exceed their clarke values and the maximum permissible concentrations (or provisional permissible concentrations). The degree of technogeneity (Tg) for these elements is very high in these zones. In the far buffer zone, Tg is about zero for many elements and increases up to Tg = 27-42% for four heavy elements (Cu, Zn, Pb, and As) and up to 81-98% for P and S. The buffer capacity of the humus horizon depends on the soil's location within the technogeochemical anomaly and also on the particular pollutant. In the impact zone, it is equal to 70-77% for lead and arsenic, although other technogenic elements (Zn, Cr, S, and P) are poorly retained and readily migrate into the deeper horizons (the buffer capacity is equal to 14-25%). Nearly all the heavy metals enter the soil in the form of sulfides. The soils in the area affected by the Noril'sk mining and smelting metallurgical enterprise are subdivided into two groups according to the degree of their contamination, i.e., the soils within Noril'sk proper and the soils in its suburbs to a distance of 4-15 km. The strongest soil contamination is recorded in the city: the clarke values are exceeded by 287, 78, 16, 4.1, and 3.5 times for Cu, Ni, Cr, Fe, and S, respectively. The major pollutants enter the soil from the ferruginous slag. The soil's contamination degree is lower in the suburbs, where heavy metal sulfides reach the soils with the aerial emission from the enterprise.

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

Online oxygen control for sulfide oxidation in anaerobic treatment of high-sulfate wastewater.

PubMed

Khanal, Samir Kumar; Huang, Ju-Chang

2006-04-01

A new technique for sulfide control was investigated in an upflow-anaerobic filter (UAF) treating high-strength, sulfate-rich wastewater. The technique used periodic oxygen injection using oxidation-reduction potential (ORP) as a controlling parameter to regulate oxygen injection. The UAF was operated at a constant influent total-organic carbon of 6740 mg/L but with different influent sulfates of 1000, 3000, and 6000 mg/L. At 1000 and 3000 mg/L influent sulfates, the produced sulfide did not impose any inhibition to methane-producing bacteria (MPB). However, at 6000 mg/L influent sulfate, the produced dissolved sulfide of 804 mg S/L (free sulfide = 280 mg S/L) severely inhibited the methanogenesis, but not the sulfidogenesis. Upon oxygen injection at elevated ORP of -265 mV, sulfides were almost completely eliminated with a concomitant improvement in methane yield by 46%. If oxygenation was excessive because of an oversetting of ORP, the excess oxygen could be used rapidly by facultative heterotrophs, thereby protecting the MPB from oxygen stress. Regarding online sulfide oxidation, it was found that the biogas and injected oxygen needed to pass through an aqueous layer containing trace metals, which were found to have a significant catalytic effect on abiotic sulfide oxidation.

SnS2 films deposited from molecular ink as Cd-free alternative buffer layer for solar cells

NASA Astrophysics Data System (ADS)

Jariwala, Akshay; Chaudhuri, Tapas K.; Toshniwal, Aditi; Patel, Sanjay; Kheraj, Vipul; Ray, Abhijit

2018-05-01

This work investigates the potential of SnS2 as a Cd-free alternative buffer layer for CIGS solar cells. The suitability of SnS2 film as a buffer layer has been evaluated by numerical analysis using SCAPS software. A new simple method for preparation of SnS2 films by dip-coating from molecular ink is reported. The formation of SnS2 is confirmed by Raman spectroscopy. The films are smooth and shiny with roughness of 2-3 nm. The films are n-type with band gap of 2.6 eV and electrical conductivity of 10-3 S/cm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ok, Kyung-Chul; Park, Jin-Seong, E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr; Ko Park, Sang-Hee

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and themore » devices remained normally functional.« less

Effect of buffer layer on photoresponse of MoS2 phototransistor

NASA Astrophysics Data System (ADS)

Miyamoto, Yuga; Yoshikawa, Daiki; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji

2018-06-01

An atomically thin MoS2 field-effect transistor (FET) is expected as an ultrathin photosensor with high sensitivity. However, a persistent photoconductivity phenomenon prevents high-speed photoresponse. Here, we investigate the photoresponse of a MoS2 FET with a thin Al2O3 buffer layer on a SiO2 gate insulator. The application of a 2-nm-thick Al2O3 buffer layer greatly improves not only the steady state properties but also the response speed from 1700 to 0.2 s. These experimental results are well explained by the random localized potential fluctuation model combined with the model based on the recombination of the bounded electrons around the trapped hole.

A Low Impact Delivery System for In Situ Treatment of Sediments Contaminated with Methyl Mercury and other Hydrophobic Chemicals

DTIC Science & Technology

2016-02-01

extrapolation to the field. Effects of treatment on native biota were judged to be negligible. This remedial option falls within a range of costs for...other remedial alternatives. 15. SUBJECT TERMS In-situ remediation , activated carbon, PCB, mercury, treatment, ecological effects 16. SECURITY... Remedial Project Manager SAOB sulfide anti-oxidant buffer SAV submerged aquatic vegetation SBIR Small Business Innovative Research SERC

Alternative for Perchlorates in Incendiary and Pyrotechnic Formulations for Projectiles

DTIC Science & Technology

2009-08-01

although other copper salts including chloride, acetate, sulfate and carbonate are highly bioavailable in animal nutrition. The toxicity of a single oral...6 hours to 820 mg m-3 after 2 hr. In experimental animals, single inhalation exposures to hydrogen sulfide result in death and respiratory...is in general regulated by the equilibria between CO2, HCO3 - and CO3 2-. The buffer capacity depends on the concentration of these substances

Buffer-regulated biocorrosion of pure magnesium.

PubMed

Kirkland, Nicholas T; Waterman, Jay; Birbilis, Nick; Dias, George; Woodfield, Tim B F; Hartshorn, Richard M; Staiger, Mark P

2012-02-01

Magnesium (Mg) alloys are being actively investigated as potential load-bearing orthopaedic implant materials due to their biodegradability in vivo. With Mg biomaterials at an early stage in their development, the screening of alloy compositions for their biodegradation rate, and hence biocompatibility, is reliant on cost-effective in vitro methods. The use of a buffer to control pH during in vitro biodegradation is recognised as critically important as this seeks to mimic pH control as it occurs naturally in vivo. The two different types of in vitro buffer system available are based on either (i) zwitterionic organic compounds or (ii) carbonate buffers within a partial-CO(2) atmosphere. This study investigated the influence of the buffering system itself on the in vitro corrosion of Mg. It was found that the less realistic zwitterion-based buffer did not form the same corrosion layers as the carbonate buffer, and was potentially affecting the behaviour of the hydrated oxide layer that forms on Mg in all aqueous environments. Consequently it was recommended that Mg in vitro experiments use the more biorealistic carbonate buffering system when possible.

Method for improving performance of high temperature superconductors within a magnetic field

DOEpatents

Wang, Haiyan; Foltyn, Stephen R.; Maiorov, Boris A.; Civale, Leonardo

2010-01-05

The present invention provides articles including a base substrate including a layer of an oriented cubic oxide material having a rock-salt-like structure layer thereon; and, a buffer layer upon the oriented cubic oxide material having a rock-salt-like structure layer, the buffer layer having an outwardly facing surface with a surface morphology including particulate outgrowths of from 10 nm to 500 run in size at the surface, such particulate outgrowths serving as flux pinning centers whereby the article maintains higher performance within magnetic fields than similar articles without the necessary density of such outgrowths.

Solid-Solution Sulfides Derived from Tunable Layered Double Hydroxide Precursors/Graphene Aerogel for Pseudocapacitors and Sodium-Ion Batteries.

PubMed

Song, Yajie; Li, Hui; Yang, Lan; Bai, Daxun; Zhang, Fazhi; Xu, Sailong

2017-12-13

Transition-metal sulfides (TMSs) are suggested as promising electrode materials for electrochemical pseudocapacitors and lithium- and sodium-ion batteries; however, they typically involve mixed composites or conventionally stoichiometric TMSs (such as NiCo 2 S 4 and Ni 2 CoS 4 ). Herein we demonstrate a preparation of solid-solution sulfide (Ni 0.7 Co 0.3 )S 2 supported on three-dimensional graphene aerogel (3DGA) via a sulfuration of NiCo-layered double hydroxide (NiCo-LDH) precursor/3DGA. The electrochemical tests show that the (Ni 0.7 Co 0.3 )S 2 /3DGA electrode exhibits a capacitance of 2165 F g -1 at 1 A g -1 , 2055 F g -1 at 2 A g -1 , and 1478 F g -1 at 10 A g -1 ; preserves 78.5% capacitance retention upon 1000 cycles for pseudocapacitors; and in particular, possesses a relatively high charge capacity of 388.7 mA h g -1 after 50 cycles at 100 mA g -1 as anode nanomaterials for sodium-ion batteries. Furthermore, the electrochemical performances are readily tuned by varying the cationic type of the tunable LDH precursors to prepare different solid-solution sulfides, such as (Ni 0.7 Fe 0.3 )S 2 /3DGA and (Co 0.7 Fe 0.3 )S 2 /3DGA. Our results show that engineering LDH precursors can offer an alternative for preparing diverse transition-metal sulfides for energy storage.

Portable heatable container

NASA Technical Reports Server (NTRS)

Yang, L. C. (Inventor)

1980-01-01

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

Portable heatable container

NASA Astrophysics Data System (ADS)

Yang, L. C.

1980-03-01

A container is provided which can be designed to heat its outer surface to sterilize it, or to heat its inner surface and any contents therewithin. In a container that self sterilizes its outer surface, the container includes a combustible layer of thermite-type pyrotechnic material which can be ignited to generate considerable heat, and a thin casing around the combustible layer which is of highly thermally conductive materials such as aluminum which can be heated to a high temperature by the ignited combustible layer. A buffer layer which may be of metal, lies within the combustible layer, and a layer of insulation such as Teflon lies within the buffer layer to insulate the contents of the container from the heat.

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

NASA Astrophysics Data System (ADS)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, A.J.; Fritz, I.J.; Drummond, T.J.

1993-11-01

Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMSmore » roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.« less

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Na, Rb and Cs partitioning between metal, silicate and sulfide: Implications for volatile depletion in terrestrial planets

NASA Astrophysics Data System (ADS)

Boujibar, A.; Fei, Y.; Du, Z.; Righter, K.; Bullock, E. S.

2017-12-01

Inner Solar System materials are known for their depletion in volatile elements, including the moderately volatile alkalis: Na, K, Rb, and Cs. The origin of this depletion is still uncertain, as several processes could have been involved, during the nebular condensation or planetary accretion. Volatile depletion is commonly estimated through comparison of alkali concentrations relatively to those of chondrites, assuming they remain in planetary mantles during core segregation. However, experimental studies show that substantial K can partition into metals that are enriched in sulfur and oxygen. Several models have also suggested that sulfides may have played an important role during episodes of sulfide segregation from a crystallizing magma ocean (sulfide matte) or accretion of S-rich planetary embryos. For Mercury, a sulfide layer could be present between core and mantle, due to immiscibility between Si-rich and S-rich metals. Therefore, here we investigate whether alkali elements (Na, Cs and Rb) could be partly sequestered in planetary cores during their differentiation. We conducted experiments at high pressure and temperature (1 to 5 GPa and up to 1900 °C) to determine partition coefficients of Na, Rb and Cs between metal and silicate. Our results show that pressure, temperature, sulfur and oxygen in metals enhance the partitioning of Na, Rb and Cs into metals, as previously found for K. For all three investigated alkalis (Na, Rb and Cs), we found a maximum partition coefficient of 1 between sulfides containing 13 wt% O and silicate melt. Therefore, S-rich cores or sulfide layers formed due to immiscibility in Fe-S-O systems could have acted as important geochemical reservoirs for alkali elements. Using our experimental data and different assumptions on initial bulk abundances, we evaluate volatile depletion in terrestrial planets, by comparing resulting mantle alkali concentrations after core segregation, with actual concentrations in the Earth's mantle.

New constraints on the origin of the Skaergaard intrusion Cu-Pd-Au mineralization: Insights from high-resolution X-ray computed tomography

NASA Astrophysics Data System (ADS)

Godel, Bélinda; Rudashevsky, Nikolay S.; Nielsen, Troels F. D.; Barnes, Stephen J.; Rudashevsky, Vladimir N.

2014-03-01

This contribution presents the first detailed three-dimensional (3D) in situ analysis of samples from the Platinova Reef using high-resolution X-ray computed tomography (HRXCT) and 3D image processing and quantification coupled with microscopic and mineralogical investigations. Our HRXCT analyses reveal the complex textural relationships between Cu-rich sulfides (bulk composition close to bornite), skaergaardite (PdCu), Au-rich phases, silicates and Fe-Ti oxides and provide unequivocal textural evidences, not observed previously. The association in 3D between Cu-rich sulfide globules, PdCu alloy and ilmenite is inconsistent with a hydrothermal origin of the Cu-Pd mineralization. In contrast, our results combined with phase diagrams strongly support a primary magmatic origin for the Cu-Pd mineralization where Cu and Pd-rich, Fe-poor sulfide liquid represents a cumulus phase that forms by in-situ nucleation. These sulfide droplets and attached skaergaardite grains were trapped during the formation and crystallization of the Fe-Ti oxides. Subsequent, post-cumulus processes led to the partial to total dissolution of the sulfide not entirely enclosed by the Fe-Ti oxides (i.e., not protected from reaction) leading to the observed variability in Cu and Pd composition at the aggregate (sulfide + PdCu) scale and to the occurrence of free PdCu alloys. In contrast to the PdCu alloy, gold-bearing minerals are never observed entirely enclosed within the Fe-Ti oxide. Two hypotheses can be envisaged for the formation of the gold enriched layer in the upper part of the section. Gold may have either precipitated from high-temperature late magmatic Cl-rich fluids. Alternatively, gold may have been enriched during fractional crystallization after sulfide had been suppressed from the liquidus after the Pd layer crystallized and then deposited along redox barriers.

Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

NASA Astrophysics Data System (ADS)

Blinova, Yu. V.; Snigirev, O. V.; Porokhov, N. V.; Evlashin, S. A.

2017-10-01

Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Great enhancement of pyroelectric properties for Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} films on Pt-Si substrates by inserting a self-buffered layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, C. G.; Li, Y. R.; Zhu, J.

2009-02-15

(100)-Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} (BST) films were deposited on Pt/Ti/SiO{sub 2}/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16x10{sup 4} {mu}C m{sup -2} K{sup -1} and 2.18x10{sup -4} Pa{sup -1/2}, respectively. The detectivity of 9.4x10{sup 7}more » cm Hz{sup 1/2} W{sup -1} was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO{sub 2} films.« less

Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

2012-03-01

This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V-1 S-1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement.

High performance polymer solar cells with as-prepared zirconium acetylacetonate film as cathode buffer layer

PubMed Central

Tan, Zhan'ao; Li, Shusheng; Wang, Fuzhi; Qian, Deping; Lin, Jun; Hou, Jianhui; Li, Yongfang

2014-01-01

Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode buffer layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acetylacetonate (a-ZrAcac) film spin-cast from its ethanol solution as cathode buffer layer. The PSCs based on a low bandgap polymer PBDTBDD as donor and PC60BM as acceptor with a-ZrAcac/Al cathode demonstrated an average power conversion efficiency (PCE) of 8.75% which is significantly improved than that of the devices with traditional Ca/Al cathode. The improved photovoltaic performance is benefitted from the decreased series resistance and enhanced light harvest of the PSCs with the a-ZrAcac/Al cathode. The results indicate that a-ZrAcac is a promising high performance cathode buffer layer for fabricating large area flexible PSCs. PMID:24732976

Annealing induced structural changes in amorphous Co{sub 23}Fe{sub 60}B{sub 17} film on Mo buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, Jagrati, E-mail: jdwivedi.phy@gmail.com; Mishra, Ashutosh; Gupta, Ranjeeta

2016-05-23

Structural changes occurring in a thin amorphous Co{sub 23}Fe{sub 60}B{sub 17} film sandwiched between two Mo layers, as a function of thermal annealing has been studied. Thermal stability of the Co{sub 23}Fe{sub 60}B{sub 17} film is found to be significantly lower than the bulk ribbons. SIMS measurements show that during crystallization, boron which is expelled out of the crystallites, has a tendency to move towards the surface. No significant diffusion of boron in Mo buffer layer is observed. This result is in contrast with some earlier studies where it was proposed that the role of buffer layer of refractory metalmore » is to absorb boron which is expelled out of the bcc FeCo phase during crystallization.« less

High bandgap III-V alloys for high efficiency optoelectronics

DOEpatents

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Atomic layer deposition of metal sulfide materials

DOE PAGES

Dasgupta, Neil P.; Meng, Xiangbo; Elam, Jeffrey W.; ...

2015-01-12

The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivatingmore » interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H 2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application space, the benefits and challenges of novel ALD processes are emphasized and common trends are summarized. We conclude with a perspective on potential future directions for metal chalcogenide ALD as well as untapped opportunities. As a result, we consider challenges that must be addressed prior to implementing ALD metal sulfides into future device architectures.« less

Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.

PubMed

Shen, Guozhen; Chen, Di; Chen, Po-Chiang; Zhou, Chongwu

2009-05-26

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga(2)O(3) heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

An interpretation of carbon and sulfur relationships in Black Sea sediments as indicators of environments of deposition

USGS Publications Warehouse

Leventhal, J.S.

1983-01-01

Syngenetic iron sulfides in sediments are formed from dissolved sulfide resulting from sulfate reduction and catabolism of organic matter by anaerobic bacteria. It has been shown that in recent marine sediments deposited below oxygenated waters there is a constant relationship between reduced sulfur and organic carbon which is generally independent of the environment of deposition. Reexamination of data from recent sediments from euxinic marine environments (e.g., the Black Sea) also shows a linear relationship between carbon and sulfur, but the slope is variable and the line intercepts the S axis at a value between 1 and 2 percent S. It is proposed that the positive S intercept is due to watercolumn microbial reduction of sulfate using metabolizable small organic molecules and the sulfide formed is precipitated and accumulates at the sediment-water interface. The variation in slope and intercept of the C to S plots for several cores and for different stratigraphic zones for the Black Sea can be interpreted in relation to thickness of the aqueous sulfide layer or thinness of the oxygen containing layer and to deposition rate, but also may be influenced by availability of iron, and perhaps the type of organic matter (Leventhal, 1979). ?? 1983.

Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Chadel, Asma; Moustafa Bouzaki, Mohammed; Aillerie, Michel; Benyoucef, Boumediene; Charles, Jean-Pierre

2017-11-01

Performances of ZnO/ZnS/CZTSSe polycrystalline thin film solar cells (Copper Zinc Tin Sulphur Selenium-solar cell) were simulated for different thicknesses of the absorber and ZnS buffer layers. Simulations were performed with SCAPS (Solar Cell Capacitance Simulator) software, starting with actual parameters available from industrial data for commercial cells processing. The influences of the thickness of the various layers in the structure of the solar cell and the gap profile of the CZTSSe absorber layer on the performance of the solar cell were studied in detail. Through considerations of recent works, we discuss possible routes to enhance the performance of CZTSSe solar cells towards a higher efficiency level. Thus, we found that for one specific thickness of the absorber layer, the efficiency of the CZTSSe solar cell can be increased when a ZnS layer replaces the usual CdS buffer layer. On the other hand, the efficiency of the solar cell can be also improved when the absorber layer presents a grad-gap. In this case, the maximum efficiency for the CZTSSe cell was found equal to 13.73%.

Classification of polytype structures of zinc sulfide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laptev, V.I.

1994-12-31

It is suggested that the existing classification of polytype structures of zinc sulfide be supplemented with an additional criterion: the characteristic of regular point systems (Wyckoff positions) including their type, number, and multiplicity. The consideration of the Wyckoff positions allowed the establishment of construction principles of known polytype series of different symmetries and the systematization (for the first time) of the polytypes with the same number of differently packed layers. the classification suggested for polytype structures of zinc sulfide is compact and provides a basis for creating search systems. The classification table obtained can also be used for numerous siliconmore » carbide polytypes. 8 refs., 4 tabs.« less

Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination

NASA Astrophysics Data System (ADS)

Guo, Zhenzhen; Ming, Xin; Wang, Gang; Hou, Baofei; Liu, Xinghang; Mei, Tao; Li, Jinhua; Wang, Jianying; Wang, Xianbao

2018-02-01

Solar steam technology is one of the simplest, most direct and effective ways to harness solar energy through water evaporation. Here, we report the development using super-hydrophilic copper sulfide (CuS) films with double-layer structures as light absorbers for solar steam generation. In the double-layer structure system, a porous mixed cellulose ester (MCE) membrane is used as a supporting layer, which enables water to get into the CuS light absorbers through a capillary action to provide continuous water during solar steam generation. The super-hydrophilic property of the double-layer system (CuS/MCE) leads to a thinner water film close to the air-water interface where the surface temperature is sufficiently high, leading to more efficient evaporation (˜80 ± 2.5%) under one sun illumination. Furthermore, the evaporation efficiencies still keep a steady value after 15 cycles of testing. The super-hydrophilic CuS film is promising for practical application in water purification and evaporation as a light absorption material.

In situ-synthesized cadmium sulfide nanowire photosensor with a parylene passivation layer for chemiluminescent immunoassays.

PubMed

Im, Ju-Hee; Kim, Hong-Rae; An, Byoung-Gi; Chang, Young Wook; Kang, Min-Jung; Lee, Tae-Geol; Son, Jin Gyeng; Park, Jae-Gwan; Pyun, Jae-Chul

2017-06-15

The direct in situ synthesis of cadmium sulfide (CdS) nanowires (NWs) was presented by direct synthesis of CdS NWs on the gold surface of an interdigitated electrode (IDE). In this work, we investigated the effect of a strong oxidant on the surfaces of the CdS NWs using X-ray photoelectron spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry. We also fabricated a parylene-C film as a surface passivation layer for in situ-synthesized CdS NW photosensors and investigated the influence of the parylene-C passivation layer on the photoresponse during the coating of parylene-C under vacuum using a quartz crystal microbalance and a photoanalyzer. Finally, we used the in situ-synthesized CdS NW photosensor with the parylene-C passivation layer to detect the chemiluminescence of horseradish peroxidase and luminol and applied it to medical detection of carcinoembryonic antigen. Copyright © 2017 Elsevier B.V. All rights reserved.

Series interconnected photovoltaic cells and method for making same

DOEpatents

Albright, S.P.; Chamberlin, R.R.; Thompson, R.A.

1995-01-31

A novel photovoltaic module and method for constructing the same are disclosed. The module includes a plurality of photovoltaic cells formed on a substrate and laterally separated by interconnection regions. Each cell includes a bottom electrode, a photoactive layer and a top electrode layer. Adjacent cells are connected in electrical series by way of a conductive-buffer line. The buffer line is also useful in protecting the bottom electrode against severing during downstream layer cutting processes. 11 figs.

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Structure characterization of MHEMT heterostructure elements with In{sub 0.4}Ga{sub 0.6}As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2016-03-15

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In{sub 0.4}Ga{sub 0.6}As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for themore » 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In{sub x}Ga{sub 1–x}As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.« less

Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

PubMed

Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

2016-07-20

We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Sulfide stress corrosion study of a super martensitic stainless steel in H2S sour environments: Metallic sulfides formation and hydrogen embrittlement

NASA Astrophysics Data System (ADS)

Monnot, Martin; Nogueira, Ricardo P.; Roche, Virginie; Berthomé, Grégory; Chauveau, Eric; Estevez, Rafael; Mantel, Marc

2017-02-01

Thanks to their high corrosion resistance, super martensitic stainless steels are commonly used in the oil and gas industry, particularly in sour environments. Some grades are however susceptible to undergo hydrogen and mechanically-assisted corrosion processes in the presence of H2S, depending on the pH. The martensitic stainless steel EN 1.4418 grade exhibits a clear protective passive behavior with no sulfide stress corrosion cracking when exposed to sour environments of pH ≥ 4, but undergoes a steep decrease in its corrosion resistance at lower pH conditions. The present paper investigated this abrupt loss of corrosion resistance with electrochemical measurements as well as different physicochemical characterization techniques. Results indicated that below pH 4.0 the metal surface is covered by a thick (ca 40 μm) porous and defect-full sulfide-rich corrosion products layer shown to be straightforwardly related to the onset of hydrogen and sulfide mechanically-assisted corrosion phenomena.

Intercalation of gaseous thiols and sulfides into Ag+ ion-exchanged aluminum dihydrogen triphosphate.

PubMed

Hayashi, Aki; Saimen, Hiroki; Watanabe, Nobuaki; Kimura, Hitomi; Kobayashi, Ayumi; Nakayama, Hirokazu; Tsuhako, Mitsutomo

2005-08-02

Ag(+) ion-exchanged layered aluminum dihydrogen triphosphate (AlP) with the interlayer distance of 0.85 nm was synthesized by the ion-exchange of proton in triphosphate with Ag(+) ion. The amount of exchanged Ag(+) ion depended on the concentration of AgNO(3) aqueous solution. Ag(+) ion-exchanged AlP adsorbed gaseous thiols and sulfides into the interlayer region. The adsorption amounts of thiols were more than those of sulfides, thiols with one mercapto group > thiol with two mercapto groups > sulfides, and depended on the amount of exchanged Ag(+) ion in the interlayer region. The thiols with one mercapto group were intercalated to expand the interlayer distance of Ag(+) ion-exchanged AlP, whereas there was no expansion in the adsorption of sulfide. In the case of thiol with two mercapto groups, there was observed contraction of the interlayer distance through the bridging with Ag(+) ions of the upper and lower sides of the interlayer region.

Extreme enrichment of Se, Te, PGE and Au in Cu sulfide microdroplets: evidence from LA-ICP-MS analysis of sulfides in the Skaergaard Intrusion, east Greenland

NASA Astrophysics Data System (ADS)

Holwell, David A.; Keays, Reid R.; McDonald, Iain; Williams, Megan R.

2015-12-01

The Platinova Reef, in the Skaergaard Intrusion, east Greenland, is an example of a magmatic Cu-PGE-Au sulfide deposit formed in the latter stages of magmatic differentiation. As is characteristic with such deposits, it contains a low volume of sulfide, displays peak metal offsets and is Cu rich but Ni poor. However, even for such deposits, the Platinova Reef contains extremely low volumes of sulfide and the highest Pd and Au tenor sulfides of any magmatic ore deposit. Here, we present the first LA-ICP-MS analyses of sulfide microdroplets from the Platinova Reef, which show that they have the highest Se concentrations (up to 1200 ppm) and lowest S/Se ratios (190-700) of any known magmatic sulfide deposit and have significant Te enrichment. In addition, where sulfide volume increases, there is a change from high Pd-tenor microdroplets trapped in situ to larger, low tenor sulfides. The transition between these two sulfide regimes is marked by sharp peaks in Au, and then Te concentration, followed by a wider peak in Se, which gradually decreases with height. Mineralogical evidence implies that there is no significant post-magmatic hydrothermal S loss and that the metal profiles are essentially a function of magmatic processes. We propose that to generate these extreme precious and semimetal contents, the sulfides must have formed from an anomalously metal-rich package of magma, possibly formed via the dissolution of a previously PGE-enriched sulfide. Other processes such as kinetic diffusion may have also occurred alongside this to produce the ultra-high tenors. The characteristic metal offset pattern observed is largely controlled by partitioning effects, producing offset peaks in the order Pt+Pd>Au>Te>Se>Cu that are entirely consistent with published D values. This study confirms that extreme enrichment in sulfide droplets can occur in closed-system layered intrusions in situ, but this will characteristically form ore deposits that are so low in sulfide that they do not conform to conventional deposit models for Cu-Ni-PGE sulfides which require very high R factors, and settling of sulfide liquids.

Experimental Investigation on the Topotaxy of Sulfide and Silicate Melts in Peridotite: Implications for the Origin of PGE-depleted Cu-Ni Sulfide Deposit

NASA Astrophysics Data System (ADS)

Wang, Z.; Zhang, J.; Jin, Z.

2016-12-01

Cu-Ni sulfide deposit is generally considered partial melt originated from the mantle which is usually PGE-enriched. However, the largest Cu-Ni sulfide deposits of China (the Jinchuan Cu-Ni deposit) is PGE-depleted. Comparing to silicate melt, the nature and topotaxy of sulfide melt have remained poorly understood. Here we report experimental investigation on the topotaxy of sulfide and silicate melts in peridotite using a piston-cylinder press and a 5GPa Griggs-type deformation apparatus. The starting material consists of polycrystalline olivine or pyrolite and 1 wt% Fe-Ni-Cu sulfide. Hydrostatic and deformation experiments were conducted at a pressure of 1.5 GPa and a temperature of 1250°. Under hydrostatic conditions, our results reveal that the apparent dihedral angle of sulfide melt in an olivine matrix( 96°) is much larger than that of silicate + sulfide melt in pyrolite(<60°) under hydrostatic conditions. The sulfide melt pockets appear mostly as blobs in triple junctions with an immiscible Ni-poor center surrounded by a Ni-rich layer. Under deformation conditions, olivine develops pronounced fabrics with the pole of the (010) forming high concentrations approximately normal to the foliation plane and the [100] axes forming a girdle in the foliation plane. EBSD phase mapping analyses reveal strong shape preferred orientations (SPO) of sulfide +silicate melt in the 45, 90, 135 degree directions for deformation experiments indicating complete wetting of grain boundaries and forming a favorable source for ore deposits. Deformation also causes mixing of the Ni-rich and the Ni-poor sulfide melts. As the platinum-group elements(PGE) prefer to concentrate in the Ni-rich sulfide melt at high temperatures, our results suggest that the metallogenetic source of the PGE-depleted Cu-Ni deposits may have formed under relatively intense deformation and low temperatures with a small fraction of mixed sulfide and silicate melts.

Modified secondary lithium metal batteries with the polyaniline-carbon nanotube composite buffer layer.

PubMed

Zhang, Ding; Yin, Yanli; Liu, Changhong; Fan, Shoushan

2015-01-07

A modified secondary lithium metal battery inserted with a polyaniline-carbon nanotube nanoporous composite buffer layer was fabricated. This unique and simple design of battery has the great potential to decrease the safety risk of the secondary Li metal battery in cycles of recharging processes and improve its cycle life in the future.

FIBER AND INTEGRATED OPTICS: Emission properties of graded-index corrugated waveguides with a metal or semiconductor coating

NASA Astrophysics Data System (ADS)

Ataya, B. A.; Osovitskiĭ, A. N.

1992-02-01

A numerical method was used to investigate the emission of TE-polarized light from a graded-index corrugated waveguide coated with a metal or semiconductor and either with or without a buffer layer. The main emission characteristics of these systems were analyzed. In the case of metallized dielectric structures an optimal corrugation depth was established for which the emitted power is a maximum. It was found that when the parameters of a structure with a buffer layer were correctly chosen and a highly reflective metal coating was used, practically all the power in the waveguide wave could be emitted along a specified direction. A structure with a buffer layer and an aluminum coating was investigated experimentally.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

PubMed

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

PubMed Central

Lee, H.-P.; Perozek, J.; Rosario, L. D.; Bayram, C.

2016-01-01

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates. PMID:27869222

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Arc-related porphyry molybdenum deposit model: Chapter D in Mineral deposit models for resource assessment

USGS Publications Warehouse

Taylor, Ryan D.; Hammarstrom, Jane M.; Piatak, Nadine M.; Seal, Robert R.

2012-01-01

Geoenvironmental concerns are generally low because of low volumes of sulfide minerals. Most deposits are marginally acid-generating to non-acid-generating with drainage waters being near-neutral pH because of the acid generating potential of pyrite being partially buffered by late-stage calcite-bearing veins. The low ore content results in a waste:ore ratio of nearly 1:1 and large tailings piles from the open-pit method of mining.

Reduction of shunt current in buffer-free IrMn based spin-valve structures

NASA Astrophysics Data System (ADS)

Kocaman, B.; Akdoğan, N.

2018-06-01

The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

Development of Selective Colorimetric Probes for Hydrogen Sulfide Based on Nucleophilic Aromatic Substitution

PubMed Central

Montoya, Leticia A.; Pearce, Taylor F.; Hansen, Ryan J.; Zakharov, Lev N.; Pluth, Michael D.

2013-01-01

Hydrogen sulfide is an important biological signalling molecule and an important environmental target for detection. A major challenge in developing H2S detection methods is separating the often similar reactivity of thiols and other nucleophiles from H2S. To address this need, the nucleophilic aromatic substitution (SNAr) reaction of H2S with electron-poor aromatic electrophiles was developed as a strategy to separate H2S and thiol reactivity. Treatment of aqueous solutions of nitrobenzofurazan (7-nitro-1,2,3-benzoxadiazole, NBD) thioethers with H2S resulted in thiol extrusion and formation of nitrobenzofurazan thiol (λmax = 534 nm). This reactivity allows for unwanted thioether products to be converted to the desired nitrobenzofurazan thiol upon reaction with H2S. The scope of the reaction was investigated using a Hammett linear free energy relationship study, and the determined ρ = +0.34 is consistent with the proposed SN2Ar reaction mechanism. The efficacy of the developed probes was demonstrated in buffer and in serum with associated sub-micromolar detection limits as low as 190 nM (buffer) and 380 nM (serum). Furthermore, the sigmoidal response of nitrobenzofurazan electrophiles with H2S can be fit to accurately quantify H2S. The developed detection strategy offers a manifold for H2S detection that we foresee being applied in various future applications. PMID:23735055

Development of selective colorimetric probes for hydrogen sulfide based on nucleophilic aromatic substitution.

PubMed

Montoya, Leticia A; Pearce, Taylor F; Hansen, Ryan J; Zakharov, Lev N; Pluth, Michael D

2013-07-05

Hydrogen sulfide is an important biological signaling molecule and an important environmental target for detection. A major challenge in developing H2S detection methods is separating the often similar reactivity of thiols and other nucleophiles from H2S. To address this need, the nucleophilic aromatic substitution (SNAr) reaction of H2S with electron-poor aromatic electrophiles was developed as a strategy to separate H2S and thiol reactivity. Treatment of aqueous solutions of nitrobenzofurazan (7-nitro-1,2,3-benzoxadiazole, NBD) thioethers with H2S resulted in thiol extrusion and formation of nitrobenzofurazan thiol (λmax = 534 nm). This reactivity allows for unwanted thioether products to be converted to the desired nitrobenzofurazan thiol upon reaction with H2S. The scope of the reaction was investigated using a Hammett linear free energy relationship study, and the determined ρ = +0.34 is consistent with the proposed SN2Ar reaction mechanism. The efficacy of the developed probes was demonstrated in buffer and in serum with associated submicromolar detection limits as low as 190 nM (buffer) and 380 nM (serum). Furthermore, the sigmoidal response of nitrobenzofurazan electrophiles with H2S can be fit to accurately quantify H2S. The developed detection strategy offers a manifold for H2S detection that we foresee being applied in various future applications.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

NASA Astrophysics Data System (ADS)

Jang, Il-Yong; John, Arun; Goodwin, Frank; Lee, Su-Young; Kim, Byung-Gook; Kim, Seong-Sue; Jeon, Chan-Uk; Kim, Jae Hyung; Jang, Yong Hoon

2014-07-01

Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

Magmatic ore deposits in layered intrusions - Descriptive model for reef-type PGE and contact-type Cu-Ni-PGE deposits

USGS Publications Warehouse

Zientek, Michael L.

2012-01-01

Layered, ultramafic to mafic intrusions are uncommon in the geologic record, but host magmatic ore deposits containing most of the world's economic concentrations of platinum-group elements (PGE) (figs. 1 and 2). These deposits are mined primarily for their platinum, palladium, and rhodium contents (table 1). Magmatic ore deposits are derived from accumulations of crystals of metallic oxides, or immiscible sulfide, or oxide liquids that formed during the cooling and crystallization of magma, typically with mafic to ultramafic compositions. "PGE reefs" are stratabound PGE-enriched lode mineralization in mafic to ultramafic layered intrusions. The term "reef" is derived from Australian and South African literature for this style of mineralization and used to refer to (1) the rock layer that is mineralized and has distinctive texture or mineralogy (Naldrett, 2004), or (2) the PGE-enriched sulfide mineralization that occurs within the rock layer. For example, Viljoen (1999) broadly defined the Merensky Reef as "a mineralized zone within or closely associated with an unconformity surface in the ultramafic cumulate at the base of the Merensky Cyclic Unit." In this report, we will use the term PGE reef to refer to the PGE-enriched mineralization, not the host rock layer. Within a layered igneous intrusion, reef-type mineralization is laterally persistent along strike, extending for the length of the intrusion, typically tens to hundreds of kilometers. However, the mineralized interval is thin, generally centimeters to meters thick, relative to the stratigraphic thickness of layers in an intrusion that vary from hundreds to thousands of meters. PGE-enriched sulfide mineralization is also found near the contacts or margins of layered mafic to ultramafic intrusions (Iljina and Lee, 2005). This contact-type mineralization consists of disseminated to massive concentrations of iron-copper-nickel-PGE-enriched sulfide mineral concentrations in zones that can be tens to hundreds of meters thick. The modes and textures of the igneous rocks hosting the mineralization vary irregularly on the scale of centimeters to meters; autoliths and xenoliths are common. Mineralization occurs in the igneous intrusion and in the surrounding country rocks. Mineralization can be preferentially localized along contact with country rocks that are enriched in sulfur-, iron-, or CO2-bearing lithologies. Reef-type and contact-type deposits, in particular those in the Bushveld Complex, South Africa, are the world's primary source of platinum and rhodium (tables 2 and 3; fig. 2). Reef-type PGE deposits are mined only in the Bushveld Complex (Merensky Reef and UG2), the Stillwater Complex (J-M Reef), and the Great Dyke (Main Sulphide Layer). PGE-enriched contact-type deposits are only mined in the Bushveld Complex. The other deposits in tables 2 and 3 are undeveloped; some are still under exploration.

Hydrogen sulfide production and volatilization in a polymictic eutrophic saline lake, Salton Sea, California.

PubMed

Reese, Brandi Kiel; Anderson, Michael A; Amrhein, Christopher

2008-11-15

The Salton Sea is a large shallow saline lake located in southern California that is noted for high sulfate concentrations, substantial algal productivity, and very warm water column temperatures. These conditions are well-suited for sulfide production, and sulfide has been implicated in summer fish kills, although no studies have been conducted to specifically understand hydrogen sulfide production and volatilization there. Despite polymictic mixing patterns and relatively short accumulation periods, the amount of sulfide produced is comparable to meromictic lakes. Sulfide levels in the Salton Sea reached concentrations of 1.2 mmol L(-1) of total free sulfide in the hypolimnion and 5.6 mmol L(-1) in the sediment pore water. Strong winds in late July mixed H2S into the surface water, where it depleted the entire water column of dissolved oxygen and reached a concentration of 0.1 mmol L(-1). Sulfide concentrations exceeded the toxicity threshold of tilapia (Oreochromis mossambicus) and combined with strong anoxia throughout the water column, resulted in a massive fish kill. The mixing of sulfide into the surface waters also increased atmospheric H2S concentrations, reaching 1.0 micromol m(-3). The flux of sulfide from the sediment into the water column was estimated to range from 2-3 mmol m(-2) day(-1) during the winter and up to 8 mmol m(-2) day(-1) during the summer. Application of the two-layer model for volatilization indicates that up to 19 mmol m(-2) day(-1) volatilized from the surface during the mixing event. We estimate that as much as 3400 Mg year(-1) or approximately 26% of sulfide that diffused into the water column from the deepest sediments may have been volatilized to the atmosphere.

Magmatic structure and geochemistry of the Luanga Mafic-Ultramafic Complex: Further constraints for the PGE-mineralized magmatism in Carajás, Brazil

NASA Astrophysics Data System (ADS)

Mansur, Eduardo Teixeira; Ferreira Filho, Cesar Fonseca

2016-12-01

The Luanga Complex is part of the Serra Leste Magmatic Suite, a cluster of PGE-mineralized mafic-ultramafic intrusions located in the northeastern portion of the Carajás Mineral Province. The Luanga Complex is a medium-sized layered intrusion consisting of three main zones: i. the lower Ultramafic Zone comprising ultramafic adcumulates (peridotite), ii. the Transition Zone comprising interlayered ultramafic and mafic cumulates (harzburgite, orthopyroxenite and norite) and iii. the upper Mafic Zone comprising a monotonous sequence of mafic cumulates (norite) with minor orthopyroxenite layers. Several PGE-mineralized zones occur in the Transition Zone but the bulk of the PGE resources are hosted within a 10-50 meter thick interval of disseminated sulfides at the contact of the Ultramafic and Transition Zones. The compositional range of cumulus olivine (Fo78.9-86.4) is comparable to those reported for layered intrusions originated from moderate primitive parental magmas. Mantle normalized alteration-resistant trace element patterns of noritic rocks are fractionated, as indicated by relative enrichment in LREE and Th, with negative Nb and Ta anomalies, suggesting assimilation of older continental crust. Ni contents in olivine in the Luanga Complex (up to 7500 ppm) stand among the highest values reported in layered intrusions globally. The highest Ni contents in olivine in the Luanga Complex occur in distinctively PGE enriched (Pt + Pd > 1 ppm) intervals of the Transition Zone, in both sulfide-poor and sulfide bearing (1-3 vol.%) rocks. The origin of the PGE- and Ni-rich parental magma of the Luanga Complex is discussed considering the upgrading of magmas through dissolution of previously formed Ni-rich sulfide melts. Our results suggest that high Ni contents in olivine and/or orthopyroxene provide an additional exploration tool for Ni-PGE deposits, particularly useful for target selection in large magmatic provinces.

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

NASA Astrophysics Data System (ADS)

Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

2018-04-01

InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Method to prevent/mitigate steam explosions in casting pits

DOEpatents

Taleyarkhan, Rusi P.

1996-01-01

Steam explosions can be prevented or mitigated during a metal casting process by the placement of a perforated flooring system in the casting pit. An upward flow of compressed gas through this perforated flooring system is introduced during the casting process to produce a buffer layer between any spilled molten metal and the cooling water in the reservoir. This buffer layer provides a hydrodynamic layer which acts to prevent or mitigate steam explosions resulting from hot, molten metal being spilled into or onto the cooling water.

Electric coupling between distant nitrate reduction and sulfide oxidation in marine sediment

PubMed Central

Marzocchi, Ugo; Trojan, Daniela; Larsen, Steffen; Louise Meyer, Rikke; Peter Revsbech, Niels; Schramm, Andreas; Peter Nielsen, Lars; Risgaard-Petersen, Nils

2014-01-01

Filamentous bacteria of the Desulfobulbaceae family can conduct electrons over centimeter-long distances thereby coupling oxygen reduction at the surface of marine sediment to sulfide oxidation in deeper anoxic layers. The ability of these cable bacteria to use alternative electron acceptors is currently unknown. Here we show that these organisms can use also nitrate or nitrite as an electron acceptor thereby coupling the reduction of nitrate to distant oxidation of sulfide. Sulfidic marine sediment was incubated with overlying nitrate-amended anoxic seawater. Within 2 months, electric coupling of spatially segregated nitrate reduction and sulfide oxidation was evident from: (1) the formation of a 4–6-mm-deep zone separating sulfide oxidation from the associated nitrate reduction, and (2) the presence of pH signatures consistent with proton consumption by cathodic nitrate reduction, and proton production by anodic sulfide oxidation. Filamentous Desulfobulbaceae with the longitudinal structures characteristic of cable bacteria were detected in anoxic, nitrate-amended incubations but not in anoxic, nitrate-free controls. Nitrate reduction by cable bacteria using long-distance electron transport to get privileged access to distant electron donors is a hitherto unknown mechanism in nitrogen and sulfur transformations, and the quantitative importance for elements cycling remains to be addressed. PMID:24577351

Single-layer transition metal sulfide catalysts

DOEpatents

Thoma, Steven G [Albuquerque, NM

2011-05-31

Transition Metal Sulfides (TMS), such as molybdenum disulfide (MoS.sub.2), are the petroleum industry's "workhorse" catalysts for upgrading heavy petroleum feedstocks and removing sulfur, nitrogen and other pollutants from fuels. We have developed an improved synthesis technique to produce SLTMS catalysts, such as molybdenum disulfide, with potentially greater activity and specificity than those currently available. Applications for this technology include heavy feed upgrading, in-situ catalysis, bio-fuel conversion and coal liquefaction.

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

DOEpatents

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu2O Complex Inverse Heterostructure with GaP Buffer for Solar Cell Applications

PubMed Central

Hsu, Chih-Hung; Chen, Lung-Chien; Lin, Yi-Feng

2013-01-01

This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu2O complex (COC) inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu) layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu2O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas. PMID:28788341

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70more » μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.« less

Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76-100% with their surface morphology and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasil'evskii, I. S., E-mail: ivasilevskii@mail.ru; Galiev, G. B.; Klimov, E. A.

The influence of the construction of a metamorphic buffer on the surface morphology and electrical properties of InAlAs/InGaAs/InAlAs nanoheterostructures with InAs content in the active layer from 76 to 100% with the use of the GaAs and InP substrates is studied. It is shown that such parameters as the electron mobility and the concentration, as well as the root-mean-square surface roughness, substantially depend on the construction of the metamorphic buffer. It is established experimentally that these parameters largely depend on the maximal local gradient of the lattice constant of the metamorphic buffer in the growth direction of the layers rathermore » than on its average value. It is shown that, with selection of the construction of the metamorphic buffer, it is possible to form nanostructured surfaces with a large-periodic profile.« less

Electrocatalytic cermet sensor

DOEpatents

Shoemaker, E.L.; Vogt, M.C.

1998-06-30

A sensor is described for O{sub 2} and CO{sub 2} gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer. 16 figs.

Electrocatalytic cermet sensor

DOEpatents

Shoemaker, Erika L.; Vogt, Michael C.

1998-01-01

A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

NASA Technical Reports Server (NTRS)

Croke, E. T.; Wang, K. L.; Heyd, A. R.; Alterovitz, S. A.; Lee, C. H.

1996-01-01

Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers

NASA Astrophysics Data System (ADS)

Nguyen, Duy-Cuong; Mikami, Yuki; Tsujimoto, Kazuki; Ryo, Toshihiro; Ito, Seigo

2012-10-01

Three-dimensional (3D) compound solar cells with the structure of have been fabricated by spray pyrolysis deposition of CuInS2 and chemical-bath deposition of Inx(OH)ySz for the light absorber and buffer layer, respectively. The effect of deposition and annealing conditions of Inx(OH)ySz on the photovoltaic properties of 3D CuInS2 solar cells was investigated. Inx(OH)ySz annealed in air ambient showed a better cell performance than those annealed in nitrogen ambient and without annealing. The improvement of the performance of cells with Inx(OH)ySz buffer layers annealed in air ambient is due to the increase in oxide concentration in the buffer layers [confirmed by X-ray photoelectron spectroscopy (XPS) measurement]. Among cells with Inx(OH)ySz buffer layers deposited for 1, 1.5, 1.75, and 2 h, that with Inx(OH)ySz deposited for 1.75 h showed the best cell performance. The best cell performance was observed for Inx(OH)ySz deposited for 1.75 h with annealing at 300 °C for 30 min in air ambient, and cell parameters were 22 mA cm-2 short-circuit photocurrent density, 0.41 V open-circuit voltage, 0.35 fill factor, and 3.2% conversion efficiency.

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uren, Michael J.; Cäsar, Markus; Kuball, Martin

2014-06-30

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band withmore » activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.« less

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1

2013-09-21

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSbmore » islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.« less

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

NASA Astrophysics Data System (ADS)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Selective growth of Pb islands on graphene/SiC buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, X. T.; Miao, Y. P.; Ma, D. Y.

2015-02-14

Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Sincemore » Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.« less

Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

PubMed Central

Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

2014-01-01

Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

PubMed Central

Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Fujii, Akihiko; Ozaki, Masanori

2010-01-01

Organic thin-film solar cells with a conducting polymer (CP)/fullerene (C60) interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of molybdenum trioxide (VI) (MoO3) and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers. PMID:28883360

On the crystallization of polymer composites with inorganic fullerene-like particles.

PubMed

Enyashin, Andrey N; Glazyrina, Polina Yu

2012-05-21

The effect of a sulfide fullerene-like particle embedded into a polymer has been studied by molecular dynamics simulations on the nanosecond time scale using a mesoscopic Van der Waals force field evaluated for the case of a spherical particle. Even in this approach, neglecting the atomistic features of the surface, the inorganic particle acts as a nucleation agent facilitating the crystallization of the polymeric sample. A consideration of the Van der Waals force field of multi-walled sulfide nanoparticles suggests that in the absence of chemical interactions the size of the nanoparticle is dominating for the adhesion strength, while the number of sulfide layers composing the cage does not play a role.

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Comparison of different photoresist buffer layers in SPR sensors based on D-shaped POF and gold film

NASA Astrophysics Data System (ADS)

Cennamo, Nunzio; Pesavento, Maria; De Maria, Letizia; Galatus, Ramona; Mattiello, Francesco; Zeni, Luigi

2017-04-01

A comparative analysis of two optical fiber sensing platforms is presented. The sensors are based on surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) with a photoresist buffer layer between the exposed POF core and the thin gold film. We show how the sensor's performances change when the photoresist layer changes. The photoresist layers proposed in this analysis are SU-8 3005 and S1813. The experimental results are congruent with the numerical studies and it is instrumental for chemical and bio-chemical applications. Usually, the photoresist layer is required in order to increase the performance of the SPR-POF sensor.

Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics.

PubMed

Eisenberg, Daniel A; Yu, Mengjing; Lam, Carl W; Ogunseitan, Oladele A; Schoenung, Julie M

2013-09-15

Copper-indium-gallium-selenium-sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS₂ p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane. Copyright © 2013 Elsevier B.V. All rights reserved.

Design of a hybrid As₂S₃-Ti:LiNbO₃ optical waveguide for phase-matched difference frequency generation at mid-infrared.

PubMed

Wang, Xin; Madsen, Christi K

2014-11-03

Based on arsenic tri-sulfide films on titanium-diffused lithium niobate, we designed a hybrid optical waveguide for efficient mid-infrared emission by phase-matched difference frequency generation (DFG). The hybrid waveguide structure possesses a low-index magnesium fluoride buffer layer sandwiched between two high-index As(2)S(3) slabs, so that pump and signal waves are tightly confined by titanium-diffused waveguide while the DFG output idler wave at mid-infrared is confined by the whole hybrid waveguide structure. On a 1 mm-long hybrid waveguide pumped at 50 mW powers, a normalized power conversion efficiency of 20.52%W(-1)cm(-2) was theoretically predicted, which is the highest record for mid-infrared DFG waveguides based on lithium niobate crystal, to the best of our knowledge. Using a tunable near-infrared pump laser at 1.38-1.47 µm or a tunable signal laser at 1.95-2.15 µm, a broad mid-infrared tuning range from 4.0 µm to 4.9 µm can be achieved. Such hybrid optical waveguides are feasible for mid-infrared emission with mW powers and sub-nanometer linewidths.

Synthesis and characterization of transition metal oxide/sulfide nanostructures for electrochemical applications

NASA Astrophysics Data System (ADS)

Yilmaz, Gamze

This thesis is essentially oriented to develop low-cost nanostructured transition metal (nickel and vanadium) oxides and sulfides with high energy density, power density and electrochemical stability via strategies of structural design, hybridization, functionalization and surface engineering. Metal oxide and metal oxide/sulfide hybrid nanostructures in several designs, including hierarchical porous nanostructures, hollow polyhedrons, nanocubes, nanoframes, octopod nanoframes, and nanocages, were synthesized to study the contribution of structural design, compositional engineering, functionalization and surface engineering to the electrochemical properties of the materials. Modulated compositional and structural features disclosed the opportunities of large accessible active sites, facile ion transport, robustness and enhanced electrical conductivity. The best electrochemical performance with merits of highest energy density (38.9 Wh kg-1), power density (7.4 kW kg-1) and electrochemical stability (90.9% after 10000 cycles) was obtained for nickel cobalt layered double hydroxide/cobalt sulfide (NiCo-LDH/Co9S8) hybrid hollow polyhedron structure.

Miocene and early Pliocene epithermal gold-silver deposits in the northern Great Basin, western United States: Characteristics, distribution, and relationship to Magmatism

USGS Publications Warehouse

John, D.A.

2001-01-01

Numerous important Miocene and early Pliocene epithermal Au-Ag deposits are present in the northern Great Basin. Most deposits are spatially and temporally related to two magmatic assemblages: bimodal basalt-rhyolite and western andesite. These magmatic assemblages are petrogenetic suites that reflect variations in tectonic environment of magma generation. The bimodal assemblage is a K-rich tholeiitic series formed during continental rifting. Rocks in the bimodal assemblage consist mostly of basalt to andesite and rhyolite compositions that generally contain anhydrous and reduced mineral assemblages (e.g., quartz + fayalite rhyolites). Eruptive forms include mafic lava flows, dikes, cinder and/or spatter cones, shield volcanoes, silicic flows, domes, and ash-flow calderas. Fe-Ti oxide barometry indicates oxygen fugacities between the magnetite-wustite and fayalite-magnetite-quartz oxygen buffers for this magmatic assemblage. The western andesite assemblage is a high K calc-alkaline series that formed a continental-margin are related to subduction of oceanic crust beneath the western coast of North America. In the northern Great Basin, most of the western andesite assemblage was erupted in the Walker Lane belt, a zone of transtension and strike-slip faulting. The western andesite assemblage consists of stratovolcanoes, dome fields, and subvolcanic plutons, mostly of andesite and dacite composition. Biotite and hornblende phenocrysts are abundant in these rocks. Oxygen fugacities of the western andesite assemblage magmas were between the nickel-nickel oxide and hematite-magnetite buffers, about two to four orders of magnitude greater than magmas of the bimodal assemblage. Numerous low-sulfidation Au-Ag deposits in the bimodal assemblage include deposits in the Midas (Ken Snyder), Sleeper, DeLamar, Mule Canyon, Buckhorn, National, Hog Ranch, Ivanhoe, and Jarbidge districts; high-sulfidation gold and porphyry copper-gold deposits are absent. Both high- and low-sulfidation gold-silver and porphyry copper-gold deposits are affiliated with the western andesite assemblage and include the Comstock Lode, Tonopah, Goldfield, Aurora, Bodie, Paradise Peak, and Rawhide deposits. Low-sulfidation Au-Ag deposits in the bimodal assemblage formed under relatively low oxygen and sulfur fugacities and have generally low total base metal (Cu + Pb + Zn) contents, low Ag/Au ratios, and notably high selenide mineral contents compared to temporally equivalent low-sulfidation deposits in the western andesite assemblage. Petrologic studies suggest that these differences may reflect variations in the magmatic-tectonic settings of the associated magmatic assemblages-deposits in the western andesite assemblage formed from oxidized, water-rich, subduction-related calc-alkaline magmas, whereas deposits in the bimodal assemblage were associated with reduced, water-poor tholeiitic magmas derived from the lithospheric mantle during continental extension. The contrasting types and characteristics of epithermal deposits and their affinities with associated igneous rocks suggest that a genetic relationship is present between these Au-Ag deposits and their temporally associated magmatism, although available data do not prove this relationship for most low-sulfidation deposits.

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Carpenter, M. S.; Melloch, Michael R.; Cooper, James A., Jr.

1991-01-01

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Textural, mineralogical and stable isotope studies of hydrothermal alteration in the main sulfide zone of the Great Dyke, Zimbabwe and the precious metals zone of the Sonju Lake Intrusion, Minnesota, USA

USGS Publications Warehouse

Li, C.; Ripley, E.M.; Oberthur, T.; Miller, J.D.; Joslin, G.D.

2008-01-01

Stratigraphic offsets in the peak concentrations of platinum-group elements (PGE) and base-metal sulfides in the main sulfide zone of the Great Dyke and the precious metals zone of the Sonju Lake Intrusion have, in part, been attributed to the interaction between magmatic PGE-bearing base-metal sulfide assemblages and hydrothermal fluids. In this paper, we provide mineralogical and textural evidence that indicates alteration of base-metal sulfides and mobilization of metals and S during hydrothermal alteration in both mineralized intrusions. Stable isotopic data suggest that the fluids involved in the alteration were of magmatic origin in the Great Dyke but that a meteoric water component was involved in the alteration of the Sonju Lake Intrusion. The strong spatial association of platinum-group minerals, principally Pt and Pd sulfides, arsenides, and tellurides, with base-metal sulfide assemblages in the main sulfide zone of the Great Dyke is consistent with residual enrichment of Pt and Pd during hydrothermal alteration. However, such an interpretation is more tenuous for the precious metals zone of the Sonju Lake Intrusion where important Pt and Pd arsenides and antimonides occur as inclusions within individual plagioclase crystals and within alteration assemblages that are free of base-metal sulfides. Our observations suggest that Pt and Pd tellurides, antimonides, and arsenides may form during both magmatic crystallization and subsolidus hydrothermal alteration. Experimental studies of magmatic crystallization and hydrothermal transport/deposition in systems involving arsenides, tellurides, antimonides, and base metal sulfides are needed to better understand the relative importance of magmatic and hydrothermal processes in controlling the distribution of PGE in mineralized layered intrusions of this type. ?? Springer-Verlag 2007.

Modelling and simulation of high-frequency (100 MHz) ultrasonic linear arrays based on single crystal LiNbO3.

PubMed

Zhang, J Y; Xu, W J; Carlier, J; Ji, X M; Nongaillard, B; Queste, S; Huang, Y P

2012-01-01

High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the fabrication of conventional backing-layer structure, which requires a pitch (distance between the centers of two adjacent elements) of half wavelength in medium, is really a great challenge. Here we present an alternative buffer-layer structure with a silicon lens for volumetric imaging. The requirement for the size of the pitch is less critical for this structure, making it possible to fabricate high-frequency (100MHz) ultrasonic linear array transducers. Using silicon substrate also makes it possible to integrate the arrays with IC (Integrated Circuit). To compare with the conventional backing-layer structure, a finite element tool, COMSOL, is employed to investigate the performances of acoustic beam focusing, the influence of pitch size for the buffer-layer configuration, and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. For a 100MHz 10-element array of buffer-layer structure, the ultrasound beam in azimuth plane in water could be electronically focused to obtain a spatial resolution (a half-amplitude width) of 86μm at the focal depth. When decreasing from half wavelength in silicon (42μm) to half wavelength in water (7.5μm), the pitch sizes weakly affect the focal resolution. The lateral spatial resolution is increased by 4.65% when the pitch size decreases from 42μm to 7.5μm. The crosstalk between adjacent elements at the central frequency is, respectively, -95dB, -39.4dB, and -60.5dB for the 10-element buffer, 49-element buffer and 49-element backing arrays. Additionally, the electrical impedance magnitudes for each structure are, respectively, 4kΩ, 26.4kΩ, and 24.2kΩ, which is consistent with calculation results using Krimholtz, Leedom, and Matthaei (KLM) model. These results show that the buffer-layer configuration is a promising alternative for the fabrication of high-frequency ultrasonic linear arrays dedicated to volumetric imaging. Copyright © 2011 Elsevier B.V. All rights reserved.

Analytical Measurement of Discrete Hydrogen Sulfide Pools in Biological Specimens

PubMed Central

Shen, Xinggui; Peter, Elvis A.; Bir, Shyamal; Wang, Rui; Kevil, Christopher G.

2015-01-01

Hydrogen sulfide (H2S) is a ubiquitous gaseous signaling molecule that plays a vital role in numerous cellular functions and has become the focus of many research endeavors including pharmaco-therapeutic manipulation. Amongst the challenges facing the field is the accurate measurement of biologically active H2S. We have recently reported that the typically used methylene blue method and its associated results are invalid and do not measure bonafide H2S. The complexity of analytical H2S measurement reflects the fact that hydrogen sulfide is a volatile gas and exists in the body in different forms, including a free form, an acid labile pool and as bound sulfane sulfur. Here we describe a new protocol to discretely measure specific H2S pools using the monobromobimane method coupled with RP-HPLC. This new protocol involves selective liberation, trapping and derivatization of H2S. Acid-labile H2S is released by incubating the sample in an acidic solution (pH 2.6) of 100 mM phosphate buffer with 0.1 mM DTPA, in an enclosed system to contain volatilized H2S. Volatilized H2S is then trapped in 100 mM Tris-HCl (pH 9.5, 0.1 mM DTPA) and then reacted with excess monobromobimane. In a separate aliquot, the contribution of bound sulfane sulfur pool was measured by incubating the sample with 1 mM TCEP (Tris(2-carboxyethyl)phosphine hydrochloride), a reducing agent to reduce disulfide bonds, in 100 mM phosphate buffer (pH 2.6, 0.1 mM DTPA), and H2S measurement performed in an analogous manner to the one described above. The acid labile pool was determined by subtracting the free hydrogen sulfide value from the value obtained by the acid liberation protocol. The bound sulfane sulfur pool was determined by subtracting the H2S measurement from the acid liberation protocol alone compared to that of TCEP plus acidic conditions. In summary, our new method protocol allows very sensitive and accurate measurement of the three primary biological pools of H2S including free, acid labile, and bound sulfane sulfur in various biological specimens. PMID:22561703

Chondrules and Opaque Phases in Unequilibrated R Chondrites: A Comprehensive Assessment of Their Formation

NASA Technical Reports Server (NTRS)

Miller, K. E.; Lauretta, D. S.; Connolly, H. C., Jr.; Berger, E. L.; Domanik, K.

2016-01-01

Equilibrated Rumuruti (R) chondrites record an oxygen fugacity between 0 and 3.5 log units below the fayalite-magnetite-quartz buffer, and a sulfur fugacity (fS2) 2 log units above the iron-troilite buffer. They are more than an order of magnitude more oxidized than the ordinary chondrites [1], and orders of magnitude more sulfidized than solar values. Although the R chondrites have the highest (delta)O-17 value of any meteorites, analyses of unequilibrated R chondrites indicate chondrule formation in an oxygen isotope reservoir similar to that of the ordinary chondrite chondrules. We present the relationship of the R chondrite parent body to pre-accretionary volatiles O and S based on our analyses of unequilibrated R chondrite material in two thin sections from the meteorite Mount Prestrud (PRE) 95404.

Implications of 3.2 Ga deep seawater from sulfur isotopic analysis of barite crystals in Pilbara, Western Australia.

NASA Astrophysics Data System (ADS)

Miki, T.; Kiyokawa, S.; Takahata, N.; Ishida, A.; Ito, T.; Ikehara, M.; Sano, Y.

2015-12-01

Sulfur isotopic (δ34S) analysis is used as one of the methods of Precambrian environmental reconstruction. It has been pointed out that δ34S fluctuations of sulfate and sulfide have close relationship with rise of oxygen level and increase in biological activity of sulfate reducing bacteria. For example, the difference of δ34S between sulfate and sulfide is small in Archean while it gets larger after evolution of oxygen level and biological activity (e.g. Canfield and Farquhar, 2009). 　However, evidence of δ34S difference between sulfate and sulfide in Archean is scarce. In this study, we focused on barite and pyrite occurred at the layer in the 3.2 Ga Dixon Island Formation in coastal Pilbara terrane, Western Australia. 　We found pyrites in from the bottom of the Black Chert Member to the Varicolored Chert Member of the Dixon Island Formation. Particularly, we can see pyrite layers of a few millimeters thick which make an alternate layers with black chert layers in the Varicolored Chert Member. The bulk δ34S values of these layers are -10.1~+26.8‰ (Sakamoto, 2010MS) and micro-meter scale heterogeneity of δ34S can be seen in minute spherical shell pyrite which was formed at early stage of diagenesis (Miki, 2015MS). 　On the other hand, barite layers are remained in the lower part of the Black Chert Member in the Dixon Island Formation. In these layers, columnar quartz crystals were representative which are considered to be a pseudomorph of barite. Such equigranular occurrences of barite are typical character in submarine hydrothermal system (Kiyokawa et al., 2006). There exist small crystals of barite (less than 200 um in diameter) which are expected to be remnants of original barite. We performed microscale sulfur isotope analyses using a NanoSIMS. 　As a preliminary result, we obtained δ34S value of +3.4~+9.1‰ (n=11). These values are similar to the reported values of barite which are considered to be a hydrothermal origin in 3.47 Ga North Pole, Pilbara (+3.2~+8.7‰, Shen et al. 2001). Our data reflects that of seawater at that time, and is lower than that of pyrite in the same place (Sakamoto, MS2010). This indicates that there was an event to make sulfide heavier than seawater sulfate.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

Superconducting structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2003-04-01

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Superconducting Structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2005-09-13

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Self-Functionalization Behind a Solution-Processed NiOx Film Used As Hole Transporting Layer for Efficient Perovskite Solar Cells.

PubMed

Ciro, John; Ramírez, Daniel; Mejía Escobar, Mario Alejandro; Montoya, Juan Felipe; Mesa, Santiago; Betancur, Rafael; Jaramillo, Franklin

2017-04-12

Fabrication of solution-processed perovskite solar cells (PSCs) requires the deposition of high quality films from precursor inks. Frequently, buffer layers of PSCs are formed from dispersions of metal oxide nanoparticles (NPs). Therefore, the development of trustable methods for the preparation of stable colloidal NPs dispersions is crucial. In this work, a novel approach to form very compact semiconducting buffer layers with suitable optoelectronic properties is presented through a self-functionalization process of the nanocrystalline particles by their own amorphous phase and without adding any other inorganic or organic functionalization component or surfactant. Such interconnecting amorphous phase composed by residual nitrate, hydroxide, and sodium ions, proved to be fundamental to reach stable colloidal dispersions and contribute to assemble the separate crystalline nickel oxide NPs in the final film, resulting in a very homogeneous and compact layer. A proposed mechanism behind the great stabilization of the nanoparticles is exposed. At the end, the self-functionalized nickel oxide layer exhibited high optoelectronic properties enabling perovskite p-i-n solar cells as efficient as 16.6% demonstrating the pertinence of the presented strategy to obtain high quality buffer layers processed in solution at room temperature.

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

Transparent TiO 2 nanotube array photoelectrodes prepared via two-step anodization

DOE PAGES

Kim, Jin Young; Zhu, Kai; Neale, Nathan R.; ...

2014-04-04

Two-step anodization of transparent TiO 2 nanotube arrays has been demonstrated with aid of a Nb-doped TiO 2 buffer layer deposited between the Ti layer and TCO substrate. Enhanced physical adhesion and electrochemical stability provided by the buffer layer has been found to be important for successful implementation of the two-step anodization process. As a result, with the proposed approach, the morphology and thickness of NT arrays could be controlled very precisely, which in turn, influenced their optical and photoelectrochemical properties.

Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region

DTIC Science & Technology

2013-08-02

The character of the I–V for structures with AlInSb layer grown undoped reflects the complex nature of the potential profile in the valence band ...Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1?xInxSb buffer layers and GaSb substrates by...ABSTRACT InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1?xInxSb buffer layers and GaSb

Series interconnected photovoltaic cells and method for making same

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes R.; Thompson, Roger A.

1995-01-01

A novel photovoltaic module (10) and method for constructing the same are disclosed. The module (10) includes a plurality of photovoltaic cells (12) formed on a substrate (14) and laterally separated by interconnection regions (15). Each cell (12) includes a bottom electrode (16), a photoactive layer (18) and a top electrode layer (20). Adjacent cells (12) are connected in electrical series by way of a conductive-buffer line (22). The buffer line (22) is also useful in protecting the bottom electrode (16) against severing during downstream layer cutting processes.

Method to prevent/mitigate steam explosions in casting pits

DOEpatents

Taleyarkhan, R.P.

1996-12-24

Steam explosions can be prevented or mitigated during a metal casting process by the placement of a perforated flooring system in the casting pit. An upward flow of compressed gas through this perforated flooring system is introduced during the casting process to produce a buffer layer between any spilled molten metal and the cooling water in the reservoir. This buffer layer provides a hydrodynamic layer which acts to prevent or mitigate steam explosions resulting from hot, molten metal being spilled into or onto the cooling water. 3 figs.

Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer

NASA Astrophysics Data System (ADS)

Wang, F.; Dong, B. J.; Zhang, Y. Q.; Liu, W.; Zhang, H. R.; Bai, Y.; Li, S. K.; Yang, T.; Sun, J. R.; Wang, Z. J.; Zhang, Z. D.

2017-09-01

The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33MnO3/CaMnO3 interface, which arises from a competition between the double-exchange ferromagnetic La0.67Ca0.33MnO3 and super-exchange antiferromagnetic CaMnO3 below the spin glass freezing temperature.

Data Elevator

DOE Office of Scientific and Technical Information (OSTI.GOV)

BYNA, SUNRENDRA; DONG, BIN; WU, KESHENG

Data Elevator: Efficient Asynchronous Data Movement in Hierarchical Storage Systems Multi-layer storage subsystems, including SSD-based burst buffers and disk-based parallel file systems (PFS), are becoming part of HPC systems. However, software for this storage hierarchy is still in its infancy. Applications may have to explicitly move data among the storage layers. We propose Data Elevator for transparently and efficiently moving data between a burst buffer and a PFS. Users specify the final destination for their data, typically on PFS, Data Elevator intercepts the I/O calls, stages data on burst buffer, and then asynchronously transfers the data to their final destinationmore » in the background. This system allows extensive optimizations, such as overlapping read and write operations, choosing I/O modes, and aligning buffer boundaries. In tests with large-scale scientific applications, Data Elevator is as much as 4.2X faster than Cray DataWarp, the start-of-art software for burst buffer, and 4X faster than directly writing to PFS. The Data Elevator library uses HDF5's Virtual Object Layer (VOL) for intercepting parallel I/O calls that write data to PFS. The intercepted calls are redirected to the Data Elevator, which provides a handle to write the file in a faster and intermediate burst buffer system. Once the application finishes writing the data to the burst buffer, the Data Elevator job uses HDF5 to move the data to final destination in an asynchronous manner. Hence, using the Data Elevator library is currently useful for applications that call HDF5 for writing data files. Also, the Data Elevator depends on the HDF5 VOL functionality.« less

Leaching of Zinc Sulfide by Thiobacillus ferrooxidans: Bacterial Oxidation of the Sulfur Product Layer Increases the Rate of Zinc Sulfide Dissolution at High Concentrations of Ferrous Ions

PubMed Central

Fowler, T. A.; Crundwell, F. K.

1999-01-01

This paper reports the results of leaching experiments conducted with and without Thiobacillus ferrooxidans at the same conditions in solution. The extent of leaching of ZnS with bacteria is significantly higher than that without bacteria at high concentrations of ferrous ions. A porous layer of elemental sulfur is present on the surfaces of the chemically leached particles, while no sulfur is present on the surfaces of the bacterially leached particles. The analysis of the data using the shrinking-core model shows that the chemical leaching of ZnS is limited by the diffusion of ferrous ions through the sulfur product layer at high concentrations of ferrous ions. The analysis of the data shows that diffusion through the product layer does not limit the rate of dissolution when bacteria are present. This suggests that the action of T. ferrooxidans in oxidizing the sulfur formed on the particle surface is to remove the barrier to diffusion by ferrous ions. PMID:10583978

Emission wavelength red-shift by using ;semi-bulk; InGaN buffer layer in InGaN/InGaN multiple-quantum-well

NASA Astrophysics Data System (ADS)

Alam, Saiful; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Elouneg-Jamroz, Miryam; Robin, Ivan Christophe; Patriarche, Gilles; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah

2017-12-01

We report an elongation of emission wavelength by inserting a ∼70 nm thick high quality semi-bulk (SB) InyGa1-yN buffer layer underneath the InxGa1-xN/InyGa1-yN (x > y) multi-quantum-well (MQW).While the MQW structure without the InGaN SB buffer is fully strained on the n-GaN template, the MQW structure with the buffer has ∼15% relaxation. This small relaxation along with slight compositional pulling induced well thickness increase of MQW is believed to be the reason for the red-shift of emission wavelength. In addition, the SB InGaN buffer acts as an electron reservoir and also helps to reduce the Quantum Confined Stark Effect (QCSE) and thus increase the emission intensity. In this way, by avoiding fully relaxed buffer induced material degradation, a longer emission wavelength can be achieved by just using InGaN SB buffer while keeping all other growth conditions the same as the reference structure. Thus, a reasonably thick fully strained or very little relaxed InGaN buffer, which is realized by ;semi-bulk; approach to maintain good InGaN material quality, can be beneficial for realizing LEDs, grown on top of this buffer, emitting in the blue to cyan to green regime without using excess indium (In).

Metal mobilization under alkaline conditions in ash-covered tailings.

PubMed

Lu, Jinmei; Alakangas, Lena; Wanhainen, Christina

2014-06-15

The aim of this study was to determine element mobilization and accumulation in mill tailings under alkaline conditions. The tailings were covered with 50 cm of fly ash, and above a sludge layer. The tailings were geochemically and mineralogically investigated. Sulfides, such as pyrrhotite, sphalerite and galena along with gangue minerals such as dolomite, calcite, micas, chlorite, epidote, Mn-pyroxene and rhodonite were identified in the unoxidized tailings. The dissolution of the fly ash layer resulted in a high pH (close to 12) in the underlying tailings. This, together with the presence of organic matter, increased the weathering of the tailings and mobilization of elements in the uppermost 47 cm of the tailings. All primary minerals were depleted, except quartz and feldspar which were covered by blurry secondary carbonates. Sulfide-associated elements such as Cd, Fe, Pb, S and Zn and silicate-associated elements such as Fe, Mg and Mn were released from the depletion zone and accumulated deeper down in the tailings where the pH decreased to circum-neutral. Sequential extraction suggests that Cd, Cu, Fe, Pb, S and Zn were retained deeper down in the tailings and were mainly associated with the sulfide phase. Calcium, Cr, K and Ni released from the ash layer were accumulated in the uppermost depletion zone of the tailings. Copyright © 2014 Elsevier Ltd. All rights reserved.

LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

NASA Astrophysics Data System (ADS)

Strecker, B. N.; McCann, P. J.; Fang, X. M.; Hauenstein, R. J.; O'Steen, M.; Johnson, M. B.

1997-05-01

Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thick PbSe layer is then grown by LPE. The LPE-grown PbSe displays excellent surface morphology and is continuous over the entire 8×8 mm2 area of growth. This result is surprising because of the large mismatch in thermal expansion coefficients between PbSe and Si. Previous attempts to grow crack-free PbSe by MBE alone using similar buffer structures on (100)-oriented Si have been unsuccessful. It is speculated that the large concentration of Se vacancies in the LPE-grown PbSe layer may allow dislocation climb along higher order slip planes, providing strain relaxation.

Bimetallic nanocomposite as hole transport co-buffer layer in organic solar cell

NASA Astrophysics Data System (ADS)

Mola, Genene Tessema; Arbab, Elhadi A. A.

2017-12-01

Silver-zinc bimetallic nanocomposite (Ag:Zn BiM-NPs) was used as an inter-facial buffer layer in the preparation of thin film organic solar cell (TFOSC). The current investigation focuses on the effect of bimetallic nanoparticles on the performance of TFOSC. A number experiments were conducted by employing Ag:Zn nanocomposite buffer layer of thickness 1 nm at various positions of the device structure. In all cases, we found significant improvement on the power conversion efficiency of the solar cells. It is also noted that the open circuit voltage of the devices are decreasing when Ag:Zn form direct contact with the ITO electrode and without the inclusion of PEDOT:PSS. However, all results show that the introduction of Ag:Zn nanocomposite layer close to PEDOT:PSS could be beneficial to improve the charge transport processes in the preparation of thin film organic solar cell. The Ag:Zn BiM-NPs and the device properties were presented and discussed in terms of optical, electrical and film morphologies of the devices.

Sulfur transformations at the hydrogen sulfide/oxygen interface in stratified waters and in cyanobacterial mats

NASA Technical Reports Server (NTRS)

Cohen, Y.

1985-01-01

Stratified water bodies allow the development of several microbial plates along the water column. The microbial plates develop in relation to nutrient availability, light penetration, and the distribution of oxygen and sulfide. Sulfide is initially produced in the sediment by sulfate-reducing bacteria. It diffuses along the water column creating a zone of hydrogen sulfide/oxygen interface. In the chemocline of Solar Lake oxygen and sulfide coexist in a 0 to 10 cm layer that moves up and down during a diurnal cycle. The microbial plate at the chemocline is exposed to oxygen and hydrogen sulfide, alternating on a diurnal basis. The cyanobacteria occupying the interface switch from anoxygenic photosynthesis in the morning to oxygenic photosynthesis during the rest of the day which results in a temporal build up of elemental sulfur during the day and disappears at night due to both oxidation to thiosulfate and sulfate by thiobacilli, and reduction to hydrogen sulfide by Desulfuromonas sp. and anaerobically respiring cyanobacteria. Sulfate reduction was enhanced in the light at the surface of the cyanobacterial mats. Microsulfate reduction measurements showed enhanced activity of sulfate reduction even under high oxygen concentrations of 300 to 800 micrometer. Apparent aerobic SO sub 4 reduction activity is explained by the co-occurrence of H sub 2. The physiology of this apparent sulfate reduction activity is studied.

Late-stage sulfides and sulfarsenides in Lower Cambrian black shale (stone coal) from the Huangjiawan mine, Guizhou Province, People's Republic of China

USGS Publications Warehouse

Belkin, H.E.; Luo, K.

2008-01-01

The Ni-Mo Huangjiawan mine, Guizhou Province, People's Republic of China, occurs in Lower Cambrian black shale (stone coal) in an area where other mines have recently extracted ore from the same horizon. Detailed electron microprobe (EMPA) and scanning electron microscope (SEM) analyses of representative thin sections have revealed a complex assemblage of sulfides and sulfarsenides. Early sulfidic and phosphatic nodules and host matrix have been lithified, somewhat fractured, and then mineralized with later-stage sulfides and sulfarsenides. Gersdorffite, millerite, polydymite, pyrite, sphalerite, chalcopyrite, galena, and clausthalite have been recognized. EMPA data are given for the major phases. Pyrite trace-element distributions and coeval Ni-, As-sulfides indicate that in the main ore layer, the last sulfide deposition was Ni-As-Co-rich. Mo and V deposition were early in the petrogenesis of these rocks. The assemblages gersdorffite-millerite-polydymite (pyrite) and millerite-gersdorffite (pyrite) and the composition of gersdorffite indicate a formation temperature of between 200?? and 300??C suggesting that the last solutions to infiltrate and mineralize the samples were related to hydrothermal processes. Environmentally sensitive elements such as As, Cd, and Se are hosted by sulfides and sulfarsenides and are the main source of these elements to residual soil. Crops grown on them are enriched in these elements, and they may be hazardous for animal and human consumption. ?? Springer-Verlag 2007.

V2O5 thin film deposition for application in organic solar cells

NASA Astrophysics Data System (ADS)

Arbab, Elhadi A. A.; Mola, Genene Tessema

2016-04-01

Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

Methods for improved growth of group III nitride semiconductor compounds

DOEpatents

Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

2015-03-17

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.

Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers

NASA Astrophysics Data System (ADS)

Gu, Wen; Xu, Tao; Zhang, Jianhua

2013-11-01

Copper sulfide (CuS) was used as the intermediate layer to build ohmic contact of Ga-Doped ZnO (GZO) transparent conduction layer (TCL) to p-GaN. The CuS and GZO layers were prepared by thermal evaporation and RF magnetron sputtering, respectively. Although the GZO-only contacts to p-GaN exhibit nonlinear behavior, ohmic contact with a specific contact resistance of 1.6 × 10-2 Ω cm2 has been realized by inserting 3 nm CuS layer between GZO and p-GaN. The optical transmittance of CuS/GZO film was measured to be higher than 80% in the range of 450-600 nm wavelength. The possible mechanism for the ohmic contact behavior can be attributed to the increased hole concentration of p-GaN surface induced by CuS films after annealing. The forward voltage of LEDs with CuS/GZO TCL has been reduced by 1.7 V at 20 mA and the output power has been increased by 29.6% at 100 mA compared with LEDs without CuS interlayer. These results indicated that using CuS intermediate layer could be a potential ohmic contact method to realize high-efficiency LEDs.

Inorganic Substrates and Encapsulation Layers for Transient Electronics

DTIC Science & Technology

2014-07-01

surface oxidation of the nitrides, the measurements were conducted shortly after oxide removal in buffered oxide etchant (BOE) 6:1 (Transene Company Inc...values for the time-dependent dissolution of thermally grown SiO2 (dry oxidation) in buffer solutions (black, pH 7.4; red, pH 8; blue, pH 10...22 5.1.3 Contractor will Identify and Measure Key Performance Characteristics of Candidate Metal Conductive Layers for

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Rui; University of Chinese Academy of Sciences, Beijing 100049; Makise, Kazumasa

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{supmore » 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.« less

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

NASA Astrophysics Data System (ADS)

Elam, Fiona M.; Starostin, Sergey A.; Meshkova, Anna S.; van der Velden-Schuermans, Bernadette C. A. M.; van de Sanden, Mauritius C. M.; de Vries, Hindrik W.

2017-06-01

Industrially and commercially relevant roll-to-roll atmospheric pressure-plasma enhanced chemical vapour deposition was used to synthesize smooth, 80 nm silica-like bilayer thin films comprising a dense ‘barrier layer’ and comparatively porous ‘buffer layer’ onto a flexible polyethylene 2,6 naphthalate substrate. For both layers, tetraethyl orthosilicate was used as the precursor gas, together with a mixture of nitrogen, oxygen and argon. The bilayer films demonstrated exceptionally low effective water vapour transmission rates in the region of 6.1  ×  10-4 g m-2 d-1 (at 40 °C, 90% relative humidity), thus capable of protecting flexible photovoltaics and thin film transistors from degradation caused by oxygen and water. The presence of the buffer layer within the bilayer architecture was mandatory in order to achieve the excellent encapsulation performance. Atomic force microscopy in addition to solvent permeation measurements, confirmed that the buffer layer prevented the formation of performance-limiting defects in the bilayer thin films, which likely occur as a result of excessive plasma-surface interactions during the deposition process. It emerged that the primary function of the buffer layer was therefore to act as a protective coating for the flexible polymer substrate material.

Chronoamperometric study of mild steel pitting in sodium sulfide aqueous solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Otero, T.F.; Achucarro, C.

1994-08-01

Mild steel samples were studied by chronoamperometry in sodium sulfide (Na[sub 2]S) aqueous solution. Pit nucleation and growth also were monitored by optical microscopy. The influence of variables such as temperature, polarization potential, surface roughness, the presence of electrochemically generated oxide layers, and the simultaneous presence of potassium hydroxide (KOH) was studied. The influence of each parameter on pit shape and growth was reviewed. Different reactions and competitive processes were proposed based on the experimental results.

METHOD OF REMOVING IODINE FROM GASES AND FILTER MEDIUM THEREFOR

DOEpatents

Silverman, L.

1961-08-01

A method for the removal of iodine from large gas volumes is described. The gaseous medium is heated to a temperature not exceeding 400 deg C. Water vapor is then added to the medium in approximate amounts of 1 lb/cu ft of the medium. The medium is then passed through a porous copper fibrous pad having deposited thereon a coating of silver, the silver coating being treated with hydrogen sulfide forming a layer of silver sulfide. (AEC)

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo; ...

2016-01-19

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Dynamics and mitigation of six pesticides in a "Wet" forest buffer zone.

PubMed

Passeport, Elodie; Richard, Benjamin; Chaumont, Cédric; Margoum, Christelle; Liger, Lucie; Gril, Jean-Joël; Tournebize, Julien

2014-04-01

Pesticide pollution is one of the main current threats on water quality. This paper presents the potential and functioning principles of a "Wet" forest buffer zone for reducing concentrations and loads of glyphosate, isoproturon, metazachlor, azoxystrobin, epoxiconazole, and cyproconazole. A tracer injection experiment was conducted in the field in a forest buffer zone at Bray (France). A fine time-scale sampling enabled to illustrate that interactions between pesticides and forest buffer substrates (soil and organic-rich litter layer), had a retarding effect on molecule transfer. Low concentrations were observed for all pesticides at the forest buffer outlet thus demonstrating the efficiency of "Wet" forest buffer zone for pesticide dissipation. Pesticide masses injected in the forest buffer inlet directly determined concentration peaks observed at the outlet. Rapid and partially reversible adsorption was likely the major process affecting pesticide transfer for short retention times (a few hours to a few days). Remobilization of metazachlor, isoproturon, desmethylisoproturon, and AMPA was observed when non-contaminated water flows passed through the forest buffer. Our data suggest that pesticide sorption properties alone could not explain the complex reaction mechanisms that affected pesticide transfer in the forest buffer. Nevertheless, the thick layer of organic matter litter on the top of the forest soil was a key parameter, which enhanced partially reversible sorption of pesticide, thus retarded their transfer, decreased concentration peaks, and likely increased degradation of the pesticides. Consequently, to limit pesticide pollution transported by surface water, the use of already existing forest areas as buffer zones should be equally considered as the most commonly implemented grass buffer strips.

Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements

NASA Astrophysics Data System (ADS)

Zepeda-Ruiz, Luis A.; Pelzel, Rodney I.; Nosho, Brett Z.; Weinberg, W. Henry; Maroudas, Dimitrios

2001-09-01

A comprehensive, quantitative analysis is presented of the deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems. The analysis combines a hierarchical theoretical approach with experimental measurements. Continuum linear elasticity theory is linked with atomic-scale calculations of structural relaxation for detailed theoretical studies of deformation in systems consisting of InAs thin films on thin GaAs(111)A substrates that are mechanically unconstrained at their bases. Molecular-beam epitaxy is used to grow very thin InAs films on both thick and thin GaAs buffer layers on epi-ready GaAs(111)A substrates. The deformation state of these samples is characterized by x-ray diffraction (XRD). The interplanar distances of thin GaAs buffer layers along the [220] and [111] crystallographic directions obtained from the corresponding XRD spectra indicate clearly that thin buffer layers deform parallel to the InAs/GaAs(111)A interfacial plane, thus aiding in the accommodation of the strain induced by lattice mismatch. The experimental measurements are in excellent agreement with the calculated lattice interplanar distances and the corresponding strain fields in the thin mechanically unconstrained substrates considered in the theoretical analysis. Therefore, this work contributes direct evidence in support of our earlier proposal that thin buffer layers in layer-by-layer semiconductor heteroepitaxy exhibit mechanical behavior similar to that of compliant substrates [see, e.g., B. Z. Nosho, L. A. Zepeda-Ruiz, R. I. Pelzel, W. H. Weinberg, and D. Maroudas, Appl. Phys. Lett. 75, 829 (1999)].

Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

NASA Astrophysics Data System (ADS)

Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

2018-05-01

Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

Partitioning of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide phases and hydrous basanite melt at upper mantle conditions

NASA Astrophysics Data System (ADS)

Li, Yuan; Audétat, Andreas

2012-11-01

The partitioning of 15 major to trace metals between monosulfide solid solution (MSS), sulfide liquid (SL) and mafic silicate melt (SM) was determined in piston-cylinder experiments performed at 1175-1300 °C, 1.5-3.0 GPa and oxygen fugacities ranging from 3.1 log units below to 1.0 log units above the quartz-fayalite-magnetite fO2 buffer, which conditions are representative of partial melting in the upper mantle in different tectonic settings. The silicate melt was produced by partial melting of a natural, amphibole-rich mantle source rock, resulting in hydrous (˜5 wt% H2O) basanitic melts similar to low-degree partial melts of metasomatized mantle, whereas the major element composition of the starting sulfide (˜52 wt% Fe; 39 wt% S; 7 wt% Ni; 2 wt% Cu) was similar to the average composition of sulfides in this environment. SL/SM partition coefficients are high (≥100) for Au, Ni, Cu, Ag, Bi, intermediate (1-100) for Co, Pb, Sn, Sb (±As, Mo), and low (≤1) for the remaining elements. MSS/SM partition coefficients are generally lower than SL/SM partition coefficients and are high (≥100) for Ni, Cu, Au, intermediate (1-100) for Co, Ag (±Bi, Mo), and low (≤1) for the remaining elements. Most sulfide-silicate melt partition coefficients vary as a function of fO2, with Mo, Bi, As (±W) varying by a factor >10 over the investigated fO2 range, Sb, Ag, Sn (±V) varying by a factor of 3-10, and Pb, Cu, Ni, Co, Au, Zn, Mn varying by a factor of 3-10. The partitioning data were used to model the behavior of Cu, Au, Ag, and Bi during partial melting of upper mantle and during fractional crystallization of primitive MORB and arc magmas. Sulfide phase relationships and comparison of the modeling results with reported Cu, Au, Ag, and Bi concentrations from MORB and arc magmas suggest that: (i) MSS is the dominant sulfide in the source region of arc magmas, and thus that Au/Cu ratios in the silicate melt and residual sulfides may decrease with increasing degree of partial melting, (ii) both MSS and sulfide liquid are precipitated during fractional crystallization of MORB, and (iii) fractional crystallization of arc magmas is strongly dominated by MSS.

An Array of Layers in Silicon Sulfides: Chain-like and Ground State Structures

NASA Astrophysics Data System (ADS)

Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

While much is known about isoelectronic materials related to carbon nanostructures, such as boron nitride layers and nanotubes, rather less is known about equivalent silicon based materials. Following the recent discovery of phosphorene, we here discuss isoelectronic silicon monosulfide monolayers. We describe a set of anisotropic ground state structures that clearly have a high stability with respect to the near isotropic silicon monosulfide monolayers. The source of the layer anisotropy is related to the presence of Si-S double chains linked by some Si-Si covalent bonds, which lie at the core of the increased stability, together with a remarkable spd hybridization on Si. The involvement of d orbitals brings more variety to silicon-sulfide based nanostructures that are isoelectronic to phosphorene, which could be relevant for future applications, adding extra degrees of freedom. Spanish Ministry of Economy and Competitiveness MINECO, Basque Government (ETORTEK Program 2014), University of the Basque Country (GrantGrant No. IT-366-07) and MPC Material Physics Center - San Sebastián.

Buffers more than buffering agent: introducing a new class of stabilizers for the protein BSA.

PubMed

Gupta, Bhupender S; Taha, Mohamed; Lee, Ming-Jer

2015-01-14

In this study, we have analyzed the influence of four biological buffers on the thermal stability of bovine serum albumin (BSA) using dynamic light scattering (DLS). The investigated buffers include 4-(2-hydroxyethyl)piperazine-1-ethanesulfonic acid (HEPES), 4-(2-hydroxyethyl)-1-piperazine-propanesulfonic acid (EPPS), 4-(2-hydroxyethyl)piperazine-1-ethanesulfonic acid sodium salt (HEPES-Na), and 4-morpholinepropanesulfonic acid sodium salt (MOPS-Na). These buffers behave as a potential stabilizer for the native structure of BSA against thermal denaturation. The stabilization tendency follows the order of MOPS-Na > HEPES-Na > HEPES ≫ EPPS. To obtain an insight into the role of hydration layers and peptide backbone in the stabilization of BSA by these buffers, we have also explored the phase transition of a thermoresponsive polymer, poly(N-isopropylacrylamide (PNIPAM)), a model compound for protein, in aqueous solutions of HEPES, EPPS, HEPES-Na, and MOPS-Na buffers at different concentrations. It was found that the lower critical solution temperatures (LCST) of PNIPAM in the aqueous buffer solutions substantially decrease with increase in buffer concentration. The mechanism of interactions between these buffers and protein BSA was probed by various techniques, including UV-visible, fluorescence, and FTIR. The results of this series of studies reveal that the interactions are mainly governed by the influence of the buffers on the hydration layers surrounding the protein. We have also explored the possible binding sites of BSA with these buffers using a molecular docking technique. Moreover, the activities of an industrially important enzyme α-chymotrypsin (α-CT) in 0.05 M, 0.5 M, and 1.0 M of HEPES, EPPS, HEPES-Na, and MOPS-Na buffer solutions were analyzed at pH = 8.0 and T = 25 °C. Interestingly, the activities of α-CT were found to be enhanced in the aqueous solutions of these investigated buffers. Based upon the Jones-Dole viscosity parameters, the kosmotropic or chaotropic behaviors of the investigated buffers at 25 °C have been examined.

Bendability optimization of flexible optical nanoelectronics via neutral axis engineering

PubMed Central

2012-01-01

The enhancement of bendability of flexible nanoelectronics is critically important to realize future portable and wearable nanoelectronics for personal and military purposes. Because there is an enormous variety of materials and structures that are used for flexible nanoelectronic devices, a governing design rule for optimizing the bendability of these nanodevices is required. In this article, we suggest a design rule to optimize the bendability of flexible nanoelectronics through neutral axis (NA) engineering. In flexible optical nanoelectronics, transparent electrodes such as indium tin oxide (ITO) are usually the most fragile under an external load because of their brittleness. Therefore, we representatively focus on the bendability of ITO which has been widely used as transparent electrodes, and the NA is controlled by employing a buffer layer on the ITO layer. First, we independently investigate the effect of the thickness and elastic modulus of a buffer layer on the bendability of an ITO film. Then, we develop a design rule for the bendability optimization of flexible optical nanoelectronics. Because NA is determined by considering both the thickness and elastic modulus of a buffer layer, the design rule is conceived to be applicable regardless of the material and thickness that are used for the buffer layer. Finally, our design rule is applied to optimize the bendability of an organic solar cell, which allows the bending radius to reach about 1 mm. Our design rule is thus expected to provide a great strategy to enhance the bending performance of a variety of flexible nanoelectronics. PMID:22587757

Bendability optimization of flexible optical nanoelectronics via neutral axis engineering.

PubMed

Lee, Sangmin; Kwon, Jang-Yeon; Yoon, Daesung; Cho, Handong; You, Jinho; Kang, Yong Tae; Choi, Dukhyun; Hwang, Woonbong

2012-05-15

The enhancement of bendability of flexible nanoelectronics is critically important to realize future portable and wearable nanoelectronics for personal and military purposes. Because there is an enormous variety of materials and structures that are used for flexible nanoelectronic devices, a governing design rule for optimizing the bendability of these nanodevices is required. In this article, we suggest a design rule to optimize the bendability of flexible nanoelectronics through neutral axis (NA) engineering. In flexible optical nanoelectronics, transparent electrodes such as indium tin oxide (ITO) are usually the most fragile under an external load because of their brittleness. Therefore, we representatively focus on the bendability of ITO which has been widely used as transparent electrodes, and the NA is controlled by employing a buffer layer on the ITO layer. First, we independently investigate the effect of the thickness and elastic modulus of a buffer layer on the bendability of an ITO film. Then, we develop a design rule for the bendability optimization of flexible optical nanoelectronics. Because NA is determined by considering both the thickness and elastic modulus of a buffer layer, the design rule is conceived to be applicable regardless of the material and thickness that are used for the buffer layer. Finally, our design rule is applied to optimize the bendability of an organic solar cell, which allows the bending radius to reach about 1 mm. Our design rule is thus expected to provide a great strategy to enhance the bending performance of a variety of flexible nanoelectronics.

Method for making high-critical-current-density YBa.sub.2 Cu.sub.3 O.sub.7 superconducting layers on metallic substrates

DOEpatents

Feenstra, Roeland; Christen, David; Paranthaman, Mariappan

1999-01-01

A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

ZnO buffer layer for metal films on silicon substrates

DOEpatents

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

NASA Astrophysics Data System (ADS)

Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

1988-05-01

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

Particle-based Nano-Antennas at the Vis-NIR regime

DTIC Science & Technology

2013-11-01

PSS (poly(3,4-ethylenedioxythiophene) :poly(styrene sulfonate) is then spin coated and dried at 110oC to form a 50nm buffer layer partially covering...dominant effect is that during the spin coating of the 50nm PEDOT buffer a residual very thin layer coated also the top 50nm part of the Au disks...antennas, capacitive versus conductive coupling, on-demand design (termed ‘popcorn’ antennas), broadband plasmonic metamaterials, and light

Investigation of noble metal substrates and buffer layers for BiSrCaCuO thin films

NASA Astrophysics Data System (ADS)

Matthiesen, M. M.; Rubin, L. M.; Williams, K. E.; Rudman, D. A.

Noble metal buffer layers and substrates for Bi2Sr2CaCu2O8 (BSCCO) films were investigated using bulk ceramic processing and thin-film techniques. Highly oriented, superconducting BSCCO films were fabricated on polycrystalline Ag substrates and on Ag/MgO and Ag/YSZ structures. Such films could not be produced on Au or Pt substrates under any annealing conditions. In addition, superconducting BSCCO films could not be produced on Ag/Al2O3, Ag/SiO2/Si, or Ag/(Haynes 230 alloy) structures using high annealing temperatures (870 C). However, oriented although poorly connected, superconducting BSCCO films were fabricated on Ag/Al2O3 structures by using lower annealing temperatures (820 C). Once lower processing temperatures are optimized, Ag may be usable as a buffer layer for BSCCO films.

Geochemical evolution of solutions derived from experimental weathering of sulfide-bearing rocks

USGS Publications Warehouse

Munk, L.; Faure, G.; Koski, R.

2006-01-01

The chemical composition of natural waters is affected by the weathering of geologic materials at or near the surface of the Earth. Laboratory weathering experiments of whole-rock sulfide rocks from the Shoe-Basin Mine (SBM) and the Pennsylvania Mine (PM) from the Peru Creek Basin, Summit County, Colorado, indicate that the mineral composition of the sulfide rocks, changes in pH, the duration of the experiment, and the formation of sorbents such as Fe and Al oxyhydroxides affect the chemical composition of the resulting solution. Carbonate minerals in the rock from SBM provide buffering capacity to the solution, contribute to increases in the pH and enhance the formation of Fe and Al oxyhydroxides, which sorb cations from solution. The final solution pH obtained in the experiments was similar to those measured in the field (i.e., 2.8 for PM and 5.0 for SBM). At PM, acidic, metal-rich mine effluent is discharged into Peru Creek where it mixes with stream water. As a result, the pH of the effluent increases causing Fe and Al oxyhydroxide and schwertmannite to precipitate. The resulting solids sorb metal cations from the water thereby improving the quality of the water in Peru Creek. ?? 2006.

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE PAGES

Varley, J. B.; Lordi, V.; He, X.; ...

2017-07-17

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Geochemistry and mineralogy of Pd in the magnetitite layer within the upper gabbro of the Mesoarchean Nuasahi Massif (Orissa, India)

NASA Astrophysics Data System (ADS)

Prichard, Hazel M.; Mondal, Sisir K.; Mukherjee, Ria; Fisher, Peter C.; Giles, Nicolas

2018-04-01

Palladium concentrations of 1-3 ppm with an average Pt/Pd ratio of 0.15 have been located for the first time in a magnetitite layer in the Nuasahi Massif in Orissa India. This layer occurs at a high stratigraphic level in the complex and is nearly 4-km long and 5-12-m thick. The sections of the Pd-rich zone identified to date extend over a distance of 1 km at the southern end of the layer. Several phases of mineralization are evident. The first, primary assemblage of platinum-group minerals (PGM) contains Pd-sulfides (vysotskite), Pd-Pb alloys (zvyagintsevite), and a Pd-In alloy, a mineral probably new to mineralogy. These PGM are confined to central magnetite grains in the magnetitites. The magnetite grains with exsolved fine laths of ilmenite at centers are referred to as central magnetite grains. These central magnetite grains are commonly surrounded by blebs of ilmenite and magnetite that contain the majority of the PGM. These are dominated by Pd-antimonides, variably altered to Pd-oxides, and other PGM including PtAs2 (sperrylite), RuS2 (laurite), and IrRhAsS (irarsite/hollingwothite). Many of these PGM also occur in the interstitial silicates, with rare occurrences in the central magnetite grains. We propose that the platinum-group elements (PGE) crystallized during a minor sulfide saturation event that occurred as the magnetitites crystallized. This event produced the minor Cu-sulfides in these magnetitites. Later introduction of antimony and arsenic, during the alteration event that produced the blebby ilmenite and magnetite, led to the more primary PGM being succeeded by the main PGM assemblage, dominated by Pd-antimonides. These are associated with secondary Cu minerals and sperrylite. Subsequent oxidation during weathering in the hot wet Indian climate produced the Pd-oxides. The Nuasahi Massif is a sill-like Archean layered ultramafic-mafic intrusion genetically linked to high-Mg siliceous basalt or boninites and is characterized by unusually thick layers of chromitite. PGE are concentrated in these chromitites and in the base metal sulfide-bearing breccias in the overlying gabbro. The Pd in the magnetitites described here indicates the presence of a third level where PGE are concentrated and a magma that crystallized to produce PGE concentrations at three stratigraphic levels in the massif. This indicates that similar thin sill-like intrusions, hosting unusually thick chromitites, may also have PGE concentrations at a number of stratigraphic levels.

In Situ Transformation of MOFs into Layered Double Hydroxide Embedded Metal Sulfides for Improved Electrocatalytic and Supercapacitive Performance.

PubMed

Yilmaz, Gamze; Yam, Kah Meng; Zhang, Chun; Fan, Hong Jin; Ho, Ghim Wei

2017-07-01

Direct adoption of metal-organic frameworks (MOFs) as electrode materials shows impoverished electrochemical performance owing to low electrical conductivity and poor chemical stability. In this study, we demonstrate self-templated pseudomorphic transformation of MOF into surface chemistry rich hollow framework that delivers highly reactive, durable, and universal electrochemically active energy conversion and storage functionalities. In situ pseudomorphic transformation of MOF-derived hollow rhombic dodecahedron template and sulfurization of nickel cobalt layered double hydroxides (NiCo-LDHs) lead to the construction of interlayered metal sulfides (NiCo-LDH/Co 9 S 8 ) system. The embedment of metal sulfide species (Co 9 S 8 ) at the LDH intergalleries offers optimal interfacing of the hybrid constituent elements and materials stability. The hybrid NiCo-LDH/Co 9 S 8 system collectively presents an ideal porous structure, rich redox chemistry, and high electrical conductivity matrix. This leads to a significant enhancement in its complementary electrocatalytic hydrogen evolution and supercapacitive energy storage properties. This work establishes the potential of MOF derived scaffold for designing of novel class hybrid inorganic-organic functional materials for electrochemical applications and beyond. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

In this work, we calculate the two-dimensional quantum energy system of the In(Ga)As wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model calculations were carried on the basis of realistic material parameters taking in consideration their dependence on the strain relaxation of the metamorphic buffer; results of the calculations were validated against available literature data. Model results confirmed previous hypothesis on the extrinsic nature of the disappearance of wetting layer emission in metamorphic structures with high In composition. We also show how, by adjusting InGaAs metamorphic buffer parameters, it could be possible: (i) to spatially separate carriers confinedmore » in quantum dots from wetting layer carriers, (ii) to create an hybrid 0D-2D system, by tuning quantum dot and wetting layer levels. These results are interesting not only for the engineering of quantum dot structures but also for other applications of metamorphic structures, as the two design parameters of the metamorphic InGaAs buffer (thickness and composition) provide additional degrees of freedom to control properties of interest.« less

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, S.; Kim, S. J.; Pan, X. Q.

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

Enhanced sulfide removal and bioelectricity generation in microbial fuel cells with anodes modified by vertically oriented nanosheets.

PubMed

Yang, Meng; Zhong, Yuezhi; Zhang, Baogang; Shi, Jiaxin; Huang, Xueyang; Xing, Yi; Su, Lin; Liu, Huipeng; Borthwick, Alistair G L

2018-01-31

Anode materials and structures are of critical importance for microbial fuel cells (MFCs) recovering energy from toxic substrates. Carbon-fiber-felt anodes modified by layers of vertically oriented TiO 2 and Fe 2 O 3 nanosheets were applied in the present study. Enhanced sulfide removal efficiencies (both over 90%) were obtained after a 48-h operation, with maximum power densities improved by 1.53 and 1.36 folds compared with MFCs with raw carbon-fiber-felt anode. The modified anodes provided more active sites for microbial adhesion with increasing biomass densities. High-throughput 16S rRNA gene sequencing analysis also indicated the increase in microbial diversities. Bacteroidetes responsible for bioelectricity generation with Thiobacillus and Spirochaeta dominating sulfide removal were found in the MFCs with the modified anodes, with less anaerobic fermentative bacteria as Firmicutes appeared. This indicates that the proposed materials are competitive for applications of MFCs generating bioelectricity from toxic sulfide.

Electron Spectroscopy Studies of Iron, Iron Sulfides and Supported Iron Surfaces: Chemisorption of Simple Gases.

NASA Astrophysics Data System (ADS)

Lee, Yiu Chung

EELS was used to investigate the chemisorption of oxygen and carbon on iron. The EELS spectra of oxidized iron show characteristic features with strong enhancement of the interband transitions involving the Fe 3d band (4.6 and 7.5 eV) and moderate enhancement of the M(,2,3) transition doublet (54.4 and 58.2 eV). The changes in the electron energy loss structures with an overlayer of graphitic or carbidic carbon were investigated. The adsorption and growth of iron on Ni(100) has been studied using the combined techniques of LEED and EELS. Initially iron grows by a layer-by-layer mechanism for the first few layers. High iron coverages result in the observation of complex LEED patterns with satellites around the main (1 x 1) diffraction sports. This is due to the formation of b.c.c. Fe(110) crystallites arranged in domains with different orientations. EELS studies show the presence of three stages in the growth of iron on Ni(100): low-coverage, film-like and bulk-like. Auger and EELS were used to study the iron sulfide (FeS(,2), Fe(,7)S(,8) and FeS) surfaces. A characteristic M(,2,3) VV Auger doublet with a separation of 5.0 eV was observed on the sulfides. An assignment of the electron energy loss peaks was made based on the energy dependence of the loss peaks and previous photoemission results. The effect of argon ion bombardment was studied. Peaks with strong iron and sulfur character were observed. Heating the damaged sulfides results in reconstruction of the sulfide surfaces. The reactions of the sulfides with simple gases, such as H(,2), CO, CH(,4), C(,2)H(,4), NH(,3) and O(,2) were also studied. Using XPS, the chemisorption of SO(,2) on CaO(100) has been studied. The chemical state of sulfur has been identified as that of sulfate. The kinetics of SO(,2) chemisorption on CaO are discussed. The binding states of Fe and Na on CaO were determined to be Fe('2+) and Na('+) respectively. At low Fe or Na coverages (< 0.5 ML), there is a large increase in the rate of sulfate formation at low SO(,2) exposures (< 3 L). This increase is explained by the 'activation' of SO(,2) chemisorption sites by Fe or Na adatoms.

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

NASA Astrophysics Data System (ADS)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

DOEpatents

Norman, Andrew

2016-08-23

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Tandem organic light-emitting diodes with buffer-modified C60/pentacene as charge generation layer

NASA Astrophysics Data System (ADS)

Wang, Zhen; Zheng, Xin; Liu, Fei; Wang, Pei; Gan, Lin; Wang, Jing-jing

2017-09-01

Buffer-modified C60/pentacene as charge generation layer (CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes (OLEDs) with multiple identical emissive units and using buffer-modified C60/pentacene organic semiconductor heterojunction (OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A-1 at 30 mA·cm-2 can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs2CO3/Al is an effective buffer for C60/pentacene-based tandem OLEDs.

Stratified Microbial Structure and Activity in Sulfide- and Methane-Producing Anaerobic Sewer Biofilms

PubMed Central

Sun, Jing; Hu, Shihu; Sharma, Keshab Raj; Ni, Bing-Jie

2014-01-01

Simultaneous production of sulfide and methane by anaerobic sewer biofilms has recently been observed, suggesting that sulfate-reducing bacteria (SRB) and methanogenic archaea (MA), microorganisms known to compete for the same substrates, can coexist in this environment. This study investigated the community structures and activities of SRB and MA in anaerobic sewer biofilms (average thickness of 800 μm) using a combination of microelectrode measurements, molecular techniques, and mathematical modeling. It was seen that sulfide was mainly produced in the outer layer of the biofilm, between the depths of 0 and 300 μm, which is in good agreement with the distribution of SRB population as revealed by cryosection-fluorescence in situ hybridization (FISH). SRB had a higher relative abundance of 20% on the surface layer, which decreased gradually to below 3% at a depth of 400 μm. In contrast, MA mainly inhabited the inner layer of the biofilm. Their relative abundances increased from 10% to 75% at depths of 200 μm and 700 μm, respectively, from the biofilm surface layer. High-throughput pyrosequencing of 16S rRNA amplicons showed that SRB in the biofilm were mainly affiliated with five genera, Desulfobulbus, Desulfomicrobium, Desulfovibrio, Desulfatiferula, and Desulforegula, while about 90% of the MA population belonged to the genus Methanosaeta. The spatial organizations of SRB and MA revealed by pyrosequencing were consistent with the FISH results. A biofilm model was constructed to simulate the SRB and MA distributions in the anaerobic sewer biofilm. The good fit between model predictions and the experimental data indicate that the coexistence and spatial structure of SRB and MA in the biofilm resulted from the microbial types and their metabolic transformations and interactions with substrates. PMID:25192994

Microbial Diversity and Lipid Abundance in Microbial Mats from a Sulfidic, Saline, Warm Spring in Utah, USA

NASA Astrophysics Data System (ADS)

Gong, J.; Edwardson, C.; Mackey, T. J.; Dzaugis, M.; Ibarra, Y.; Course 2012, G.; Frantz, C. M.; Osburn, M. R.; Hirst, M.; Williamson, C.; Hanselmann, K.; Caporaso, J.; Sessions, A. L.; Spear, J. R.

2012-12-01

The microbial diversity of Stinking Springs, a sulfidic, saline, warm spring northeast of the Great Salt Lake was investigated. The measured pH, temperature, salinity, and sulfide concentration along the flow path ranged from 6.64-7.77, 40-28° C, 2.9-2.2%, and 250 μM to negligible, respectively. Five sites were selected along the flow path and within each site microbial mats were dissected into depth profiles based on the color and texture of the mat layers. Genomic DNA was extracted from each layer, and the 16S rRNA gene was amplified and sequenced on the Roche 454 Titanium platform. Fatty acids were also extracted from the mat layers and analyzed by liquid chromatography and mass spectrometry. The mats at Stinking Springs were classified into roughly two morphologies with respect to their spatial distribution: loose, sometimes floating mats proximal to the spring source; and thicker, well-laminated mats distal to the spring source. Loosely-laminated mats were found in turbulent stream flow environments, whereas well-laminated mats were common in less turbulent sheet flows. Phototrophs, sulfur oxidizers, sulfate reducers, methanogens, other bacteria and archaea were identified by 16S rRNA gene sequences. Diatoms, identified by microscopy and lipid analysis were found to increase in abundance with distance from the source. Methanogens were generally more abundant in deeper mat laminae. Photoheterotrophs were found in all mat layers. Microbial diversity increased significantly with depth at most sites. In addition, two distinct microbial streamers were identified and characterized at the two fast flowing sites. These two streamer varieties were dominated by either cyanobacteria or flavobacteria. Overall, our genomic and lipid analysis suggest that the physical and chemical environment is more predictive of the community composition than mat morphology. Site Map

Stratified microbial structure and activity in sulfide- and methane-producing anaerobic sewer biofilms.

PubMed

Sun, Jing; Hu, Shihu; Sharma, Keshab Raj; Ni, Bing-Jie; Yuan, Zhiguo

2014-11-01

Simultaneous production of sulfide and methane by anaerobic sewer biofilms has recently been observed, suggesting that sulfate-reducing bacteria (SRB) and methanogenic archaea (MA), microorganisms known to compete for the same substrates, can coexist in this environment. This study investigated the community structures and activities of SRB and MA in anaerobic sewer biofilms (average thickness of 800 μm) using a combination of microelectrode measurements, molecular techniques, and mathematical modeling. It was seen that sulfide was mainly produced in the outer layer of the biofilm, between the depths of 0 and 300 μm, which is in good agreement with the distribution of SRB population as revealed by cryosection-fluorescence in situ hybridization (FISH). SRB had a higher relative abundance of 20% on the surface layer, which decreased gradually to below 3% at a depth of 400 μm. In contrast, MA mainly inhabited the inner layer of the biofilm. Their relative abundances increased from 10% to 75% at depths of 200 μm and 700 μm, respectively, from the biofilm surface layer. High-throughput pyrosequencing of 16S rRNA amplicons showed that SRB in the biofilm were mainly affiliated with five genera, Desulfobulbus, Desulfomicrobium, Desulfovibrio, Desulfatiferula, and Desulforegula, while about 90% of the MA population belonged to the genus Methanosaeta. The spatial organizations of SRB and MA revealed by pyrosequencing were consistent with the FISH results. A biofilm model was constructed to simulate the SRB and MA distributions in the anaerobic sewer biofilm. The good fit between model predictions and the experimental data indicate that the coexistence and spatial structure of SRB and MA in the biofilm resulted from the microbial types and their metabolic transformations and interactions with substrates. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

Sulfur isotope geochemistry of the central Japan Sea sediments (IODP Exp. 346) 20 150 kyr ago: Implications for the evolution of Asian Monsoon climate system

NASA Astrophysics Data System (ADS)

Oshio, S.; Yamaguchi, K. E.; Takahashi, S.; Naraoka, H.; Ikehara, M.

2016-12-01

Asian monsoon climate system has started about 50 Ma, after the collision of the Indian and Eurasian continents followed by uplift of the Himalaya and Tibetan Plateau. It has influenced sediments in the Japan Sea, where cm-scale alternation of Corg-rich dark layers and Corg-poor light layers occurs. This is most likely due to temporal changes in the nutrient status and/or oceanic redox conditions, which are likely caused by the fluctuations in the intensity of continental weathering and ocean currents, both of which were ultimately caused by the variable monsoon system. In order to obtain insights into the evolving oceanic redox state and the monsoon system, we conducted sulfur speciation and isotope study for the marine sediment core samples recovered in the central Japan Sea by IODP Exp. 346. The light layers have lower Spy (0.03-0.25 wt.%) contents when compared to the dark layers (0.26-1.49 wt.%). The Corg contents have similar distribution (0.34-1.10 wt.% for light layers and 1.16-3.38 wt.% for dark layers). However, the SSO4 contents (0.02-.64 wt.%) and the δ34S values (-34 to -38‰) did not show such light-dark distinction. Elevated Spy/Corg ratios (0.03-1.00) in the dark layers are interpreted to represent sulfide formation in the anoxic water column by bacterial sulfate reduction. During deposition of light layers, oxidation of sulfide minerals could have resulted in formation of sulfate minerals without significant isotope fractionation, as observed in this study. Regardless of the type of the sediments (dark vs. light), sulfate was not limiting during bacterial sulfate reduction, as reflected in the sulfur isotope compositions. We speculate that, during deposition of dark layers, enhanced summer monsoon activity caused heavy rainfall and increased source-rock weathering, runoff of the Yangtze River, and nutrient input into the East China Sea and the Tsushima Warm Current. Inflow of nutrient-rich and less salty water into the Japan Sea triggered enhanced biological activity, water-column density stratification, transport of organic matter into deeper ocean and consumption of dissolved oxygen, and ultimately the creation of anoxic water body to allow bacterial sulfate reduction. (syngenetic sulfide formation)

An innovative coupling between column leaching and oxygen consumption tests to assess behavior of contaminated marine dredged sediments.

PubMed

Couvidat, Julien; Benzaazoua, Mostafa; Chatain, Vincent; Zhang, Fan; Bouzahzah, Hassan

2015-07-01

Contaminated dredged sediments are often considered hazardous wastes, so they have to be adequately managed to avoid leaching of pollutants. The mobility of inorganic contaminants is a major concern. Metal sulfides (mainly framboïdal pyrite, copper, and zinc sulfides) have been investigated in this study as an important reactive metal-bearing phase sensitive to atmospheric oxygen action. An oxygen consumption test (OC-Test) has been adapted to assess the reactivity of dredged sediments when exposed to atmospheric oxygen. An experimental column set-up has been developed allowing the coupling between leaching and oxygen consumption test to investigate the reactivity of the sediment. This reactivity, which consisted of sulfide oxidation, was found to occur for saturation degree between 60 and 90 % and until the 20th testing week, through significant sulfates releases. These latter were assumed to come from sulfide oxidation in the first step of the test, then probably from gypsum dissolution. Confrontation results of OC-Test and leachate quality shows that Cu was well correlated to sulfates releases, which in turn, leads to Ca and Mg dissolution (buffer effect). Cu, and mostly Zn, was associated to organic matter, phyllosilicates, and other minerals through organo-clay complexes. This research confirmed that the OC-Test, originally developed for mine tailings, could be a useful tool in the dredged sediment field which can allow for intrinsic characterization of reactivity of a material suspected to readily reacting with oxygen and for better understanding of geochemical processes that affect pollutants behavior, conversion, and transfer in the environment.

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Krupanidhi, S. B.

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic ({beta}) and hexagonal ({alpha}) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 deg. C when compared to the samples grown in the absence of silicon nitridemore » buffer layer and with silicon nitride buffer layer grown at 600 deg. C. Core-level photoelectron spectroscopy of Si{sub x}N{sub y} layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors ({approx}1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively.« less

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

PubMed

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

DOEpatents

Bhattacharya, Raghu N [Littleton, CO

2009-11-03

The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

Multicolor Nanostructured High Efficiency Photovoltaic Devices

DTIC Science & Technology

2007-06-30

the surface of strained buffer layer starts to form some nanoholes and nanogrooves. The depth of these nanoholes and nanogrooves is more than 3 nm...This indicates that the nanoholes and nanogrooves are formed not only just in the top GaAs (5 ML) layer, but also deep in the strained GaAsSb buffer...temperature during the InAs growth. As the InAs growth temperature decreases, the density of the nanoholes and nanogrooves is significantly reduced

Hybrid SnO2/TiO2 Nanocomposites for Selective Detection of Ultra-Low Hydrogen Sulfide Concentrations in Complex Backgrounds

PubMed Central

Larin, Alexander; Womble, Phillip C.; Dobrokhotov, Vladimir

2016-01-01

In this paper, we present a chemiresistive metal oxide (MOX) sensor for detection of hydrogen sulfide. Compared to the previous reports, the overall sensor performance was improved in multiple characteristics, including: sensitivity, selectivity, stability, activation time, response time, recovery time, and activation temperature. The superior sensor performance was attributed to the utilization of hybrid SnO2/TiO2 oxides as interactive catalytic layers deposited using a magnetron radio frequency (RF) sputtering technique. The unique advantage of the RF sputtering for sensor fabrication is the ability to create ultra-thin films with precise control of geometry, morphology and chemical composition of the product of synthesis. Chemiresistive films down to several nanometers can be fabricated as sensing elements. The RF sputtering technique was found to be very robust for bilayer and multilayer oxide structure fabrication. The geometry, morphology, chemical composition and electronic structure of interactive layers were evaluated in relation to their gas sensing performance, using scanning electron microscopy (SEM), X-ray diffraction technique (XRD), atomic force microscopy (AFM), Energy Dispersive X-ray Spectroscopy (EDAX), UV visible spectroscopy, and Kelvin probe measurements. A sensor based on multilayer SnO2/TiO2 catalytic layer with 10% vol. content of TiO2 demonstrated the best gas sensing performance in all characteristics. Based on the pattern relating material’s characteristics to gas sensing performance, the optimization strategy for hydrogen sulfide sensor fabrication was suggested. PMID:27618900

Specific Heat and Thermal Diffusivity of YBCO Coated Conductors

NASA Astrophysics Data System (ADS)

Naito, Tomoyuki; Fujishiro, Hiroyuki; YasuhisaYamamura; Saito, Kazuya; Okamoto, Hiroshi; Hayashi, Hidemi; Gosho, Yoshihiro; Ohkuma, Takeshi; Shiohara, Yuh

We have measured the temperature dependence of specific heat,C(T), for Ag deposited YBCO coated conductor (YCC),YCC reinforced by a thin Cutape (YCC-Cu), andthe Hastelloy substrate with buffer layer. C(T) of HastelloyC-276 with buffer layer agrees well with the reported oneof HastelloyC-276, indicating that the contribution of the buffer layer to the measured C(T) is negligibly small. C(T)of both YCC and YCC-Cu tapes was successfully reproduced by the simple sum rule using the C(T) values reported for Hastelloy, Ag and Cu. The results demonstrate that C(T) of various YCC tapes can be estimated using the reported C(T)of constitutional materials. The estimated thermal diffusivity, a = K/C, at 300K of YCC, which was estimated using the thermal conductivity, K, did not agree with the reported a of Ag. This resultwas in consistent with the fact that the applied heat flew through the Aglayer, suggesting that a relation of a = K/Cfor homogeneous material cannot be applicable for the layered material such as YCC.

Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hwachol; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Liu, Jun

2015-10-28

We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on anmore » amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.« less

Magneto-optical properties of CoFeB ultrathin films: Effect of Ta buffer and capping layer

NASA Astrophysics Data System (ADS)

Husain, Sajid; Gupta, Nanhe Kumar; Barwal, Vineet; Chaudhary, Sujeet

2018-05-01

The effect of adding Ta as a capping and buffer layer on ultrathin CFB(Co60Fe20B20) thin films has been investigated by magneto-optical Kerr effect. A large difference in the coercivity and saturation field is observed between the single layer CFB(2nm) and Ta(5nm)/CFB(2nm)/Ta(2nm) trilayer structure. In particular, the in-plane anisotropy energy is found to be 90kJ/m3 on CFB(2nm) and 2.22kJ/m3 for Ta(5nm)/CFB(2nm)/Ta(2nm) thin films. Anisotropy energy further reduced to 0.93kJ/m3 on increasing the CFB thinness in trilayer structure i.e., Ta(5nm)/CFB(4nm)/Ta(2nm). Using VSM measurement, the saturation magnetization is found to be 1230±50 kA/m. Low coercivity and anisotropy energy in capped and buffer layer thin films envisage the potential of employing CFB for low field switching applications of the spintronic devices.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

Accessing the band alignment in high efficiency Cu(In,Ga)(Se,S)2 (CIGSSe) solar cells with an InxSy:Na buffer based on temperature dependent measurements and simulations

NASA Astrophysics Data System (ADS)

Schoneberg, Johannes; Ohland, Jörg; Eraerds, Patrick; Dalibor, Thomas; Parisi, Jürgen; Richter, Michael

2018-04-01

We present a one-dimensional simulation model for high efficiency Cu(In,Ga)(Se,S)2 solar cells with a novel band alignment at the hetero-junction. The simulation study is based on new findings about the doping concentration of the InxSy:Na buffer and i-ZnO layers as well as comprehensive solar cell characterization by means of capacitance, current voltage, and external quantum efficiency measurements. The simulation results show good agreement with the experimental data over a broad temperature range, suggesting the simulation model with an interface-near region (INR) of approximately 100 nm around the buffer/absorber interface that is of great importance for the solar cell performance. The INR exhibits an inhomogeneous doping and defect density profile as well as interface traps at the i-layer/buffer and buffer/absorber interfaces. These crucial parameters could be accessed via their opposing behavior on the simulative reconstruction of different measurement characteristics. In this work, we emphasize the necessity to reconstruct the results of a set of experimental methods by means of simulation to find the most appropriate model for the solar cell. Lowly doped buffer and intrinsic window layers in combination with a high space charge at the front of the absorber lead to a novel band alignment in the simulated band structure of the solar cell. The presented insights may guide the strategy of further solar cell optimization including (alkali-) post deposition treatments.

o-Fluorination of aromatic azides yields improved azido-based fluorescent probes for hydrogen sulfide: synthesis, spectra, and bioimaging.

PubMed

Wei, Chao; Wang, Runyu; Wei, Lv; Cheng, Longhuai; Li, Zhifei; Xi, Zhen; Yi, Long

2014-12-01

Hydrogen sulfide (H2S) is an endogenously produced gaseous signaling molecule with multiple biological functions. To visualize the endogenous in situ production of H2S in real time, new coumarin- and boron-dipyrromethene-based fluorescent turn-on probes were developed for fast sensing of H2S in aqueous buffer and in living cells. Introduction of a fluoro group in the ortho position of the aromatic azide can lead to a greater than twofold increase in the rate of reaction with H2S. On the basis of o-fluorinated aromatic azides, fluorescent probes with high sensitivity and selectivity toward H2S over other biologically relevant species were designed and synthesized. The probes can be used to in situ to visualize exogenous H2S and D-cysteine-dependent endogenously produced H2S in living cells, which makes them promising tools for potential applications in H2S biology. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Picomolar quantitation of free sulfite in foods by means of [57Co]hydroxocobalamin and radiometric chromatography of [57Co]sulfitocobalamin. Method, applications and significance of coexisting sulfides.

PubMed

Beck, R A; Anes, J M; Savini, L M; Mateer, R A

2000-06-09

The concentration dependent reaction of sulfite with 57Co-labeled hydroxocobalamin (OH57CoCbl) to produce a sulfitocobalamin (SO(3)57CoCbl) adduct served as a quantification strategy for foodborne sulfite residues freely extracted into pH 5.2, 0.05 M acetate buffer. SO(3)57CoCbl was then resolved using SP-Sephadex C-25 gel chromatography and its radiometric detection allowed calculation of a standard logit plot from which unknown sulfite concentrations could be determined. The sulfite detection range was 6.0 nM-0.3 pM with respective relative standard deviations of 4.4-29.4% for 50-microl samples. Individual incidences of foodborne sulfite intolerances provoked by L-cysteine or sulfite additive use in bakery products, which remained undetected using conventional sulfite analytical methods, underscored the quantitative value of the method. The analytical significance and occurrences of detectable sulfides coexisting with foodborne sulfite residues was also addressed.

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

PubMed

Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-09-07

We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to stronglymore » favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.« less

Preparation and Layer-by-Layer Solution Deposition of Cu(In,Ga)O2 Nanoparticles with Conversion to Cu(In,Ga)S2 Films

PubMed Central

Dressick, Walter J.; Soto, Carissa M.; Fontana, Jake; Baker, Colin C.; Myers, Jason D.; Frantz, Jesse A.; Kim, Woohong

2014-01-01

We present a method of Cu(In,Ga)S2 (CIGS) thin film formation via conversion of layer-by-layer (LbL) assembled Cu-In-Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles were created via a novel flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films were assembled by alternately dipping quartz, Si, and/or Mo substrates into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1–2 microns. PSS/CIGO-PAH films were found to be inadequate due to weak adhesion to the Si and Mo substrates, excessive particle diffusion during sulfurization, and mechanical softness ill-suited to further processing. PDA/CIGO-PAH films, in contrast, were more mechanically robust and more tolerant of high temperature processing. After LbL deposition, films were oxidized to remove polymer and sulfurized at high temperature under flowing hydrogen sulfide to convert CIGO to CIGS. Complete film conversion from the oxide to the sulfide is confirmed by X-ray diffraction characterization. PMID:24941104

Versatile buffer layer architectures based on Ge1-xSnx alloys

NASA Astrophysics Data System (ADS)

Roucka, R.; Tolle, J.; Cook, C.; Chizmeshya, A. V. G.; Kouvetakis, J.; D'Costa, V.; Menendez, J.; Chen, Zhihao D.; Zollner, S.

2005-05-01

We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These layers exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, and unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection of lattice parameters higher than that of Ge, which allows lattice matching with technologically useful III-V compounds. Using this approach we have demonstrated growth of GaAs, GeSiSn, and pure Ge layers at low temperatures on Si(100). These materials display extremely high-quality structural, morphological, and optical properties opening the possibility of versatile integration schemes directly on silicon.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Microchannel plate detector and methods for their fabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elam, Jeffrey W.; Mane, Anil U.; Peng, Qing

A multi-component tunable resistive coating and methods of depositing the coating on the surfaces of a microchannel plate (MCP) detector. The resistive coating composed of a plurality of alternating layers of a metal oxide resistive component layer and a conductive component layer composed of at least one of a metal, a metal nitride and a metal sulfide. The coating may further include an emissive layer configured to produce a secondary electron emission in response to a particle interacting with the MCP and a neutron-absorbing layer configured to respond to a neutron interacting with the MCP.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

Corrosion of metals and alloys in sulfate melts at 750 C

NASA Technical Reports Server (NTRS)

Misra, A. K.

1986-01-01

The corrosion of Ni, Co, Ni-10Cr, Co-21Cr, and IN738 was studied at 750 C in the presence of molten sulfate mixtures (Na2SO4-Li2SO4 and Na2SO4-CoSO4) and in an atmosphere consisting of O2 + 0.12 percent SO2-SO3. The corrosion was observed to be similar for both Na2SO4-Li2SO4 and Na2SO4-CoSO4 melts. The corrosion of Ni and Co took place by the formation of a mixed oxide plus sulfide scale, very similar to the corrosion in SO2 or SO3 alone. The initial stage for the corrosion of Ni-10Cr involved the formation of a thick NiO + Ni3S2 duplex scale, and Cr sulfide was formed during the later stages. A pitting type of morphology was observed for both Co-21Cr and IN738. The pit was Cr sulfide at the beginning, and subsequently the sulfides oxidized to Cr2O3. A base-metal oxide layer was present above the pit, and this was observed to be formed very early in the corrosion process. A mechanism is proposed to explain this. In general, the formation of sulfides appears to be the primary mode of degradation in mixed sulfide melts.

Wastewater-Enhanced Microbial Corrosion of Concrete Sewers.

PubMed

Jiang, Guangming; Zhou, Mi; Chiu, Tsz Ho; Sun, Xiaoyan; Keller, Jurg; Bond, Philip L

2016-08-02

Microbial corrosion of concrete in sewers is known to be caused by hydrogen sulfide, although the role of wastewater in regulating the corrosion processes is poorly understood. Flooding and splashing of wastewater in sewers periodically inoculates the concrete surface in sewer pipes. No study has systematically investigated the impacts of wastewater inoculation on the corrosion of concrete in sewers. This study investigated the development of the microbial community, sulfide uptake activity, and the change of the concrete properties for coupons subjected to periodic wastewater inoculation. The concrete coupons were exposed to different levels of hydrogen sulfide under well-controlled conditions in laboratory-scale corrosion chambers simulating real sewers. It was evident that the periodic inoculation induced higher corrosion losses of the concrete in comparison to noninoculated coupons. Instantaneous measurements such as surface pH did not reflect the cumulative corrosion losses caused by long-term microbial activity. Analysis of the long-term profiles of the sulfide uptake rate using a Gompertz model supported the enhanced corrosion activity and greater corrosion loss. The enhanced corrosion rate was due to the higher sulfide uptake rates induced by wastewater inoculation, although the increasing trend of sulfide uptake rates was slower with wastewater. Increased diversity in the corrosion-layer microbial communities was detected when the corrosion rates were higher. This coincided with the environmental conditions of increased levels of gaseous H2S and the concrete type.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

NASA Astrophysics Data System (ADS)

Qian, L.; Xu, Z.; Teng, F.; Duan, X.-X.; Jin, Z.-S.; Du, Z.-L.; Li, F.-S.; Zheng, M.-J.; Wang, Y.-S.

2007-06-01

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)- p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adhikari, R., E-mail: rajdeep.adhikari@jku.at; Capuzzo, G.; Bonanni, A., E-mail: alberta.bonanni@jku.at

Polarization induced degenerate n-type doping with electron concentrations up to ∼10{sup 20 }cm{sup −3} is achieved in graded Al{sub x}Ga{sub 1−x}N layers (x: 0% → 37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy, and electron dispersive x-ray spectroscopy confirm the gradient in the composition of the Al{sub x}Ga{sub 1−x}N layers, while Hall effect studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir.

Experimental and Numerical Investigation of Internal Gravity Waves Excited by Turbulent Penetrative Convection in Water Around Its Density Maximum

NASA Astrophysics Data System (ADS)

Perrard, Stéphane; Le Bars, Michaël; Le Gal, Patrice

This study is devoted to the experimental and numerical analysis of the excitation of gravity waves by turbulent convection. This situation is representative of many geophysical or astrophysical systems such as the convective bottom layer of the atmosphere that radiates internal waves in the stratosphere, or the interaction between the convective and the radiative zones in stars. In our experiments, we use water as a working fluid as it possesses the remarkable property of having a maximum density at 4 °C. Therefore, when establishing on a water layer a temperature gradient between 0 °C at the bottom and room temperature at the top, a turbulent convective region appears spontaneously under a stably stratified zone. In these conditions, gravity waves are excited by the convective fluid motions penetrating the stratified layer. Although this type of flow, called penetrative convection, has already been described, we present here the first velocity field measurement of wave emission and propagation. We show in particular that an intermediate layer that we call the buffer layer emerges between the convective and the stratified zones. In this buffer layer, the angle of propagation of the waves varies with the altitude since it is slaved to the Brunt-Väisälä frequency which evolves rapidly between the convective and the stratified layer. A minimum angle is reached at the end of the buffer layer. Then we observe that an angle of propagation is selected when the waves travel through the stratified layer. We expect this process of wave selection to take place in natural situations.

Impact of reaction conditions on the laccase-catalyzed conversion of bisphenol A.

PubMed

Kim, Young-Jin; Nicell, James A

2006-08-01

The oxidative conversion of aqueous BPA catalyzed by laccase from Trametes versicolor was conducted in a closed, temperature-controlled system containing buffer for pH control. The effects of medium pH, buffer concentration, temperature and mediators and the impacts of dissolved wastewater constituents on BPA conversion were investigated. The optimal pH for BPA conversion was approximately 5, with greater than half maximal conversion and good enzyme stability in the range of 4-7. The stability of the enzyme was not impacted by buffer concentration, nor was BPA conversion. Despite the observation that the enzyme tended to be inactivated at elevated temperatures, enhanced conversion of BPA was observed up until a reaction temperature of 45 degrees C. Of the mediators studied, ABTS was most successful at enhancing the conversion of BPA. Dissolved wastewater constituents that were studied included various inorganic salts, organic compounds and heavy metal ions. BPA conversion was inhibited in the presence of anions such as sulfite, thiosulfate, sulfide, nitrite and cyanide. The metal ions Fe(III) and Cu(II) and the halogens chloride and fluoride substantially suppressed BPA conversion, but the presence of selected organic compounds did not significantly reduce the conversion of BPA.

Compatibility of buffered uranium carbides with tungsten.

NASA Technical Reports Server (NTRS)

Phillips, W. M.

1971-01-01

Results of compatibility tests between tungsten and hyperstoichiometric uranium carbide alloys run at 1800 C for 1000 and 2500 hours. These tests compared tungsten-buffered uranium carbide with tungsten-buffered uranium-zirconium carbide. The zirconium carbide addition appeared to widen the homogeneity range of the uranium carbide, making additional carbon available for reaction. Reaction layers could be formed by either of two diffusion paths, one producing UWC2, while the second resulted in the formation of W2C. UWC2 acts as a diffusion barrier for carbon and slows the growth of the reaction layer with time, while carbon diffusion is relatively rapid in W2C, allowing equilibrium to be reached in less than 2500 hours at a temperature of 1800 C.

A study on the mechanism of stress corrosion cracking of duplex stainless steels in hot alkaline-sulfide solution

NASA Astrophysics Data System (ADS)

Chasse, Kevin Robert

Duplex stainless steels (DSS) generally have superior strength and corrosion resistance as compared to most standard austenitic and ferritic stainless grades owing to a balanced microstructure of austenite and ferrite. As a result of having favorable properties, DSS have been selected for the construction of equipment in pulp and paper, chemical processing, nuclear, oil and gas as well as other industries. The use of DSS has been restricted in some cases because of stress corrosion cracking (SCC), which can initiate and grow in either the ferrite or austenite phase depending on the environment. Thorough understanding of SCC mechanisms of DSS in chloride- and hydrogen sulfide-containing solutions has been useful for material selection in many environments. However, understanding of SCC mechanisms of DSS in sulfide-containing caustic solutions is limited, which has restricted the capacity to optimize process and equipment design in pulp and paper environments. Process environments may contain different concentrations of hydroxide, sulfide, and chloride, altering corrosion and SCC susceptibility of each phase. Crack initiation and growth behavior will also change depending on the relative phase distribution and properties of austenite and ferrite. The role of microstructure and environment on the SCC of standard grade UNS S32205 and lean grade UNS S32101 in hot alkaline-sulfide solution were evaluated in this work using electrochemical, film characterization, mechanical testing, X-ray diffraction, and microscopy techniques. Microstructural aspects, which included residual stress state, phase distribution, phase ratio, and microhardness, were related to the propensity for SCC crack initiation in different simulated alkaline pulping liquors at 170 °C. Other grades of DSS and reference austenitic and superferritic grades of stainless steel were studied using exposure coupons for comparison to understand compositional effects and individual phase susceptibility. Environments having different ionic concentrations of inorganic salts, i.e. sodium hydroxide, sodium sulfide, and sodium chloride, were used to understand the effect of liquor alkalinity, percent sulfidity, and chloride content on the corrosion and SCC behavior. Hydrogen embrittlement of S32205 was studied to understand the electrochemical conditions and fracture features associated with this failure mode. The results showed that there is an appreciable increase in the susceptibility of DSS to SCC in the presence of sulfide and chloride in hot alkaline environments. Sulfide and chloride adsorption at active sites on the metal surface caused unstable passivity and defective film formation. Chloride and sulfide available at the electrolyte/film surface reduced the charge transfer resistance and shifted the response of the films to lower frequencies indicating the films became more defective. The surface films had an outer, discontinuous layer, and an inner, barrier layer. Fe, Mo, and Mn were selectively dissolved in hot alkaline environments. The onset of SCC was related to the extent of selective dissolution and was consistent with a slip-step dissolution mechanism. Selective corrosion of the austenite phase depended on percent sulfidity and liquor alkalinity. Chlorides enhanced crack initiation and coalescence along the austenite/ferrite boundaries. Crack initiation and transgranular growth strongly depended on the phase distribution in the banded microstructure of DSS. These findings will augment understanding of SCC in this alloy-environment combination and facilitate materials selection in hot alkaline-sulfide environments, particularly in the petrochemical, nuclear, chemical processing, and pulp and paper industries.

Effect of CdTe Back Surface Field on the Efficiency Enhancement of a CGS Based Thin Film Solar Cell

NASA Astrophysics Data System (ADS)

Khattak, Yousaf Hameed; Baig, Faisal; Marí, Bernabé; Beg, Saira; Gillani, Syed Rizwan; Ahmed, Tanveer

2018-05-01

Numerical analysis of the proposed solar cell is based on cadmium telluride (CdTe) and copper gallium sulfide (CuGaS2), also known as CGS, is proposed in this research work. Performance of a CdTe/CGS/CdS/ZnO cell is analyzed in Solar Cell Capacitance Simulator (SCAPS) software, by changing the physical parameters like doping density of acceptor, doping density of donor, absorber thickness and buffer thickness. The cell structure is in the same order as the CGS/CdS/ZnO with CdTe used for the back surface field layer. Power conversion efficiency of the CGS/CdS/ZnO solar cell without CdTe is 10.578% (with FF = 83.70%, V oc = 0.82 V, J sc = 15.40 mA/cm2) and conversion efficiency of CdTe/CGS/CdS/ZnO is 28.20% (with FF = 77.66%, V oc = 1.22 V, J sc = 29.63 mA/cm3). The overall investigation and simulation results from the modeling of a proposed device in SCAPS is very useful for the understanding of the fundamentals of photovoltaic devices and gives feedback to engineers and designers for the fabrication of CdTe/CGS based solar cells.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

PubMed

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Corrosion Behavior of Plasma-Passivated Cu

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbour, J.C.; Braithwaite, J.W.; Son, K.A.

1999-07-09

A new approach is being pursued to study corrosion in Cu alloy systems by using combinatorial analysis combined with microscopic experimentation (the Combinatorial Microlab) to determine mechanisms for copper corrosion in air. Corrosion studies are inherently difficult because of complex interactions between materials and environment, forming a multidimensional phase space of corrosion variables. The Combinatorial Microlab was specifically developed to address the mechanism of Cu sulfidation, which is an important reliability issue for electronic components. This approach differs from convention by focusing on microscopic length scales, the relevant scale for corrosion. During accelerated aging, copper is exposed to a varietymore » of corrosive environments containing sulfidizing species that cause corrosion. A matrix experiment was done to determine independent and synergistic effects of initial Cu oxide thickness and point defect density. The CuO{sub x} was controlled by oxidizing Cu in an electron cyclotron resonance (ECR) O{sub 2} plasma, and the point defect density was modified by Cu ion irradiation. The matrix was exposed to 600 ppb H{sub 2}S in 65% relative humidity air atmosphere. This combination revealed the importance of oxide quality in passivating Cu and prevention of the sulfidizing reaction. A native oxide and a defect-laden ECR oxide both react at 20 C to form a thick Cu{sub 2}S layer after exposure to H{sub 2}S, while different thicknesses of as-grown ECR oxide stop the formation of Cu{sub 2}S. The species present in the ECR oxide will be compared to that of an air oxide, and the sulfide layer growth rate will be presented.« less

Study on the occurrence of platinum in Xinjie CuNi sulfide deposits by a combination of SPM and NAA

NASA Astrophysics Data System (ADS)

Li, Xiaolin; Zhu, Jieqing; Lu, Rongrong; Gu, Yingmei; Wu, Xiankang; Chen, Youhong

1997-07-01

A combination of neutron-activation analysis (NAA) and scanning proton microprobe (SPM) was used to study the distribution of platinum-group elements (PGEs) in rocks and ores from Xinjie CuNi deposit. The minimum detection limits of PGEs by NAA had been much improved by means of a nickel-sulfide fire-assay technique for pre-concentration of PGEs in the ore samples. A simple and effective method was developed for true element mapping in SPM experiments. A pair of moveable absorption filters was set up in the target chamber for high sensitivities of both major and trace elements. The bulk analysis results by NNA indicated that the PGE mineralization occurred at the base of Xinjie layered intrusion in clinopyroxenite rocks and the CuNi sulfide minerals disseminated within the rocks had high abundance level of PGEs. However, the micro-PIXE analysis of the CuNi sulfide mineral grains did not find PGEs above the MDL of 6-9 ppm for Rh, Ru and Pd, and 60 ppm for Pt. The search for platinum occurrence in sulfide minerals was followed by scanning analysis of SPM when some smaller platinum enriched grains were found in the sulfide minerals. The microscopic analysis results suggested that platinum occurred in the CuNi sulfide matrix as independent arsenide mineral grains. The chemical formula of the arsenide sperrylite was PtAs 2. The information of the platinum occurrence was helpful to future mineralogical research and mineral processing and beneficiation of the CuNi deposit.

Tailoring Curie temperature and magnetic anisotropy in ultrathin Pt/Co/Pt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S., E-mail: anil@physics.iisc.ernet.in

The dependence of perpendicular magnetization and Curie temperature (T{sub c}) of Pt/Co/Pt thin films on the thicknesses of Pt seed (Pt{sub s}) and presence of Ta buffer layer has been investigated in this work. Pt and Co thicknesses were varied between 2 to 8 nm and 0.35 to 1.31 nm (across the spin reorientation transition thickness) respectively and the T{sub c} was measured using SQUID magnetometer. We have observed a systematic dependence of T{sub c} on the thickness of Pt{sub s}. For 8 nm thickness of Pt{sub s} the Co layer of 0.35 nm showed ferromagnetism with perpendicular anisotropy atmore » room temperature. As the thickness of the Pt{sub s} was decreased to 2 nm, the T{sub c} went down below 250 K. XRD data indicated polycrystalline growth of Pt{sub s} on SiO{sub 2}. On the contrary Ta buffer layer promoted the growth of Pt(111). As a consequence Ta(5 nm)/Pt(3 nm)/Co(0.35 nm)/Pt(2 nm) had much higher T{sub c} (above 300 K) with perpendicular anisotropy when compared to the same stack without the Ta layer. Thus we could tune the ferromagnetic T{sub c} and anisotropy by varying the Pt{sub s} thickness and also by introducing Ta buffer layer. We attribute these observations to the micro-structural evolution of Pt{sub s} layer which hosts the Co layer.« less

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.

PubMed

Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Hussain, Mushtaque; Nur, Omer; Willander, Magnus

2013-07-13

Cheap and efficient white light-emitting diodes (LEDs) are of great interest due to the energy crisis all over the world. Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission. Scanning electron microscopy have well demonstrated the arrays of the ZnO nanorods and the proper etching into the nanotubes. X-ray diffraction study describes the wurtzite crystal structure array of ZnO nanorods with the involvement of GaN at the (002) peak. The cathodoluminescence spectra represent strong and broad visible emission peaks compared to the UV emission and a weak peak at 425 nm which is originated from GaN. Electroluminescence study has shown highly improved luminescence response for the LEDs fabricated with NiO buffer layer compared to that without NiO layer. Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN. Moreover, the presence of NiO buffer layer might create the confinement effect.

Enhancement of the performance of cadmium sulfide quantum dot solar cells using a platinum-polyaniline counter electrode and a silver nanoparticle-sensitized photoanode

NASA Astrophysics Data System (ADS)

Nourolahi, Hamzeh; Bolorizadeh, Mohammadagha A.; Dorri, Navid; Behjat, Abbas

2017-07-01

A metal-polymer nanocomposite of platinum-polyaniline (Pt/PANI) was deposited on fluorine-doped tin oxide glass substrates to function as a counter electrode for polysulfide redox reactions in cadmium sulfide quantum dot-sensitized solar cells. In addition, front-side illuminated photoelectrodes were sensitized by silver (Ag) nanoparticles (NPs) as an interfacial layer between a transparent conducting oxide substrate and a TiO2 layer. This configuration, i.e., both the Pt/PANI counter electrode and the Ag NPs in the photoanode, leads to 1.92% in the power-conversion efficiency (PCE) of the fabricated cells. A PCE enhancement of around 21% was obtained for the Ag NPs-sensitized photoanodes, as compared with the Ag NPs-free one. The improved performance can be attributed to the easier transport of excited electrons and the inhibition of charge recombination due to the application of an Ag NPs layer. Electrochemical impedance spectroscopy measurements showed that once Ag NPs are incorporated in a photoanode, electron transport time decreases in the photoanode structure.

Dual role of TiO2 buffer layer in Pt catalyzed BiFeO3 photocathodes: Efficiency enhancement and surface protection

NASA Astrophysics Data System (ADS)

Shen, Huanyu; Zhou, Xiaoxue; Dong, Wen; Su, Xiaodong; Fang, Liang; Wu, Xi; Shen, Mingrong

2017-09-01

Polycrystalline ferroelectric BiFeO3 (BFO) films deposited on transparent indium tin oxide (ITO) electrodes have shown to be an interesting photocathode for photoelectrochemical (PEC) water splitting; however, its PEC performance and stability are far from perfection. Herein, we reported an amorphous TiO2 buffer layer, inserted between BFO and Pt catalyst, improves significantly both its PEC activity and stability. A photocathodic current density of -460 μA/cm2 at 0 V vs. reversible hydrogen electrode (RHE) and an onset potential of 1.25 V vs. RHE were obtained in ITO/BFO/TiO2/Pt photocathode under 100 mW/cm2 Xe-lamp illumination. TiO2 functions as a buffer layer to remove the upward barrier between BFO and Pt, and makes the photogenerated carriers separate efficiently. The photocathode also shows high stability in acid solution after a 10-h PEC continuous testing.

Automotive assessment of carbon-silicon composite anodes and methods of fabrication

NASA Astrophysics Data System (ADS)

Karulkar, Mohan; Blaser, Rachel; Kudla, Bob

2015-01-01

To assess the potential of carbon silicon composite anodes for automotive applications, C-Si anodes were fabricated and certain improvements employed. The use of a PVDF buffer layer is demonstrated for the first time with a C-Si composite material. The buffer layer increases adhesion by 89%, and increases capacity by 50-80%. Also, a limited capacity range is employed to improve cycle life by up to 200%, and enable currents as high as 2 mA cm-1. The combined use of a buffer layer and limited capacity range has not been reported before. A model is also presented for comparing C-Si performance with real-world automotive targets from USABC, including energy density, power density, specific energy, and specific power. The analysis reveals a capacity penalty that arises from pairing C-Si with a traditional cathode (NCA), and which prevents the cell from meeting all targets. Scenarios are presented in which a higher-capacity cathode (250 mAh g-1) allows all targets to be hypothetically met.

Stress-induced magnetization for epitaxial spinel ferrite films through interface engineering

NASA Astrophysics Data System (ADS)

Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

2004-08-01

This study found "stress-induced magnetization" for epitaxial ferrite films with spinel structure. We grew (111)- and (001)-epitaxial Ni0.17Zn0.23Fe2.60O4(NZF) films on CeO2/Y0.15Zr0.85O1.93(YSZ )/Si(001) and oxide single-crystal substrates, respectively. There is a window of lattice mismatch (between 0 and 6.5%) to achieve bulk saturation magnetization (Ms). An NZF film grown on CeO2/YSZ //Si(001) showed tensile stress, but that stress was relaxed by introducing a ZnCo2O4(ZC ) buffer layer. NZF films grown on SrTiO3(ST )(001) and (La,Sr)(Al,Ta)O3(LSAT)(001) had compressive stress, which was enhanced by introducing a ZC buffer layer. In both cases, bulk Ms was achieved by introducing the ZC buffer layer. This similarity suggests that magnetization can be controlled by the stress.

Assessment of polyelectrolyte coating stability under dynamic buffer conditions in CE.

PubMed

Swords, Kyleen E; Bartline, Peter B; Roguski, Katherine M; Bashaw, Sarah A; Frederick, Kimberley A

2011-09-01

Dynamic buffer conditions are present in many electrophoretically driven separations. Polyelectrolyte multilayer coatings have been employed in CE because of their chemical and physical stability as well as their ease of application. The goal of this study is to measure the effect of dynamic changes in buffer pH on flow using a real-time method for measuring EOF. Polyelectrolyte multilayers (PEMs) were composed of pairs of strong or completely ionized polyelectrolytes including poly(diallyldimethylammonium) chloride and poly(styrene sulfonate) and weak or ionizable polyelectrolytes including poly(allylamine) and poly(methacrylic acid). Polyelectrolyte multilayers of varying thicknesses (3, 4, 7, 8, 15, or 16 layers) were also studied. While the magnitude of the EOF was monitored every 2 s, the buffer pH was exchanged from a relatively basic pH (7.1) to increasingly acidic pHs (6.6, 6.1, 5.5, and 5.1). Strong polyelectrolytes responded minimally to changes in buffer pH (<1%), whereas substantial (>10%) and sometimes irreversible changes were measured with weak polyelectrolytes. Thicker coatings resulted in a similar magnitude of response but were more likely to degrade in response to buffer pH changes. The most stable coatings were formed from thinner layers of strong polyelectrolytes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface chemistry of iron sliding in air and nitrogen lubricated with hexadecane and hexadecane containing dibenzyl-dilsulfide

NASA Technical Reports Server (NTRS)

Wheeler, D. R.

1979-01-01

Wear experiments were conducted on iron sliding in hexadecane and hexadecane plus one weight percent dibenzyl dilsulfide (DBDS) in atmospheres of air and nitrogen at room temperature. The wear scars and the wear debris were analyzed by X-ray photoelectron spectroscopy. The presence of air reduced wear but increased friction, while DBDS reduced friction but had little effect on wear except that the wear increased somewhat when DBDS was used in air. Wear scar analysis indicated that oxygen and sulfur competed chemically for the surface, with the oxide predominating. Low wear was associated with a thick oxide layer and low friction with a thin predominantly sulfide layer. Analysis of the wear debris indicated the presence of a sulfate in the high wear case (hexadecane plus DBDS in air), and showed the presence of an organic sulfide in the low wear case (Hexadecane plus DBDS in nitrogen).

High-temperature oxidation/corrosion of iron-based superalloys

NASA Technical Reports Server (NTRS)

Lemkey, F. D.; Smeggil, J. G.; Bailey, R. S.; Schuster, J. C.; Nowotny, H.

1987-01-01

The oxidation and sulfidation of several novel iron-base superalloys were evaluated in high-temperature cyclic tests. The experimental austenitic alloys examined were modifications of NASAUT-4GA which were developed for Stirling-engine application. The weight gains and resulting surface scales were measured and analyzed. Mixed oxide scales were found to form on all specimens exposed above 871 C. The build-up of these scales led to a depletion of Mn and Cr in a zone adjacent to the oxides. In addition, the initial oxidation of the Fe-rich alloy was inhibited by a thin but tenacious Si layer which formed at the interface between oxides and the parent layer. Sulfidation tests using Na2SO4 coatings resulted in the formation of a protective spinel and alpha-Fe2O3 phases. Preferential attack of the carbide phase by hydrogen was not observed after 350 h at 871 C.

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

NASA Astrophysics Data System (ADS)

Plis, E.; Kutty, M. N.; Myers, S.; Kim, H. S.; Gautam, N.; Dawson, L. R.; Krishna, S.

2011-05-01

We have investigated various passivation techniques for type-II InAs/GaSb strained layer superlattice (SLS) detectors with p-i-n and PbIbN designs with a 100%-cut-off wavelength of ˜12 μm at 77 K. The passivation schemes include dielectric deposition (silicon nitride (SiN x), silicon dioxide (SiO 2), photoresist (SU-8)), chalcogenide treatments (zinc sulfide (ZnS), ammonium sulfide [(NH 4) 2S]), and electrochemical sulphur deposition. [(NH 4) 2S] passivation and electrochemical sulphur passivation (ECP) showed the better performances, improving the dark current density by factors of 200 and 25 (p-i-n detector) and ˜3 and 54 (PbIbN detector), respectively ( T = 77 K, -0.1 V of applied bias). The specific detectivity D* was improved by a factor of 2 and by an order of magnitude for (NH 4) 2S and ECP passivated PbIbN detectors, respectively.

The geochemical cycling of trace elements in a biogenic meromictic lake

NASA Astrophysics Data System (ADS)

Balistrieri, Laurie S.; Murray, James W.; Paul, Barbara

1994-10-01

The geochemical processes affecting the behavior and speciation of As, Co, Cr, Cu, Fe, Mn, Mo, Ni, Pb, V, and Zn in Hall Lake, Washington, USA, are assessed by examining dissolved and acid soluble particulate profiles of the elements and utilizing results from thermodynamic calculations. The water column of this meromictic lake is highly stratified and contains distinctive oxic, suboxic, and anoxic layers. Changes in the redox state of the water column with depth affect the distribution of all the elements studied. Most noticeable are increases in dissolved Co, Cr, Fe, Mn, Ni, Pb, and Zn concentrations across the oxic-suboxic boundary, increases in dissolved As, Co, Cr, Fe, Mn, and V concentrations with depth in the anoxic layer, significant decreases in dissolved Cu, Ni, Pb, and Zn concentrations in the anoxic region below the sulfide maximum, and large increases in acid soluble particulate concentrations of As, Cr, Cu, Fe, Mo, Ni, Pb, V, and Zn in the anoxic zone below the sulfide maximum. Thermodynamic calculations for the anoxic region indicate that all redox sensitive elements exist in their reduced forms, the primary dissolved forms of Cu, Ni, Pb, and Zn are metal sulfide solution complexes, and solid sulfide phases of Cu, Fe, Mo, and Pb are supersaturated. Calculations using a vertical diffusion and reaction model indicate that the oxidation rate constant for Mn(II) in Hall Lake is estimated to be 0.006 d -1 and is at the lower end of the range of microbial oxidation rates observed in other natural systems. The main geochemical processes influencing the distribution and speciation of trace elements in Hall Lake appear to be transformations of dissolved elements between their oxidation states (As, Cr, Cu, Fe, Mn, V), cocycling of trace elements with Mn and Fe (As, Co, Cr, Cu, Mo, Ni, Pb, V, Zn), formation of soluble metal sulfide complexes (Co, Cu, Ni, Pb, Zn), sorption (As, Co, Cr, Ni, V), and precipitation (Cu, Fe, Mn, Mo, Pb, Zn).

The geochemical cycling of trace elements in a biogenic meromictic lake

USGS Publications Warehouse

Balistrieri, L.S.; Murray, J.W.; Paul, B.

1994-01-01

The geochemical processes affecting the behavior and speciation of As, Co, Cr, Cu, Fe, Mn, Mo, Ni, Pb, V, and Zn in Hall Lake, Washington, USA, are assessed by examining dissolved and acid soluble particulate profiles of the elements and utilizing results from thermodynamic calculations. The water column of this meromictic lake is highly stratified and contains distinctive oxic, suboxic, and anoxic layers. Changes in the redox state of the water column with depth affect the distribution of all the elements studied. Most noticeable are increases in dissolved Co, Cr, Fe, Mn, Ni, Pb, and Zn concentrations across the oxic-suboxic boundary, increases in dissolved As, Co, Cr, Fe, Mn, and V concentrations with depth in the anoxic layer, significant decreases in dissolved Cu, Ni, Pb, and Zn concentrations in the anoxic region below the sulfide maximum, and large increases in acid soluble particulate concentrations of As, Cr, Cu, Fe, Mo, Ni, Pb, V, and Zn in the anoxic zone below the sulfide maximum. Thermodynamic calculations for the anoxic region indicate that all redox sensitive elements exist in their reduced forms, the primary dissolved forms of Cu, Ni, Pb, and Zn are metal sulfide solution complexes, and solid sulfide phases of Cu, Fe, Mo, and Pb are supersaturated. Calculations using a vertical diffusion and reaction model indicate that the oxidation rate constant for Mn(II) in Hall Lake is estimated to be 0.006 d-1 and is at the lower end of the range of microbial oxidation rates observed in other natural systems. The main geochemical processes influencing the distribution and speciation of trace elements in Hall Lake appear to be transformations of dissolved elements between their oxidation states (As, Cr, Cu, Fe, Mn, V), cocycling of trace elements with Mn and Fe (As, Co, Cr, Cu, Mo, Ni, Pb, V, Zn), formation of soluble metal sulfide complexes (Co, Cu, Ni, Pb, Zn), sorption (As, Co, Cr, Ni, V), and precipitation (Cu, Fe, Mn, Mo, Pb, Zn). ?? 1994.

Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

DOE PAGES

Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

2016-12-22

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr 3Al 2O 6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr 3Al 2O 6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO 3 layer can be employed as an effective barrier to preserve Sr 3Al 2O 6 during subsequent growth, thus allowingmore » its integration in a wider range of oxide heterostructures.« less

Research into the use of pyrolytic oxides and polymers for the fabrication of thin film high energy capacitors

NASA Technical Reports Server (NTRS)

Nevin, J. H.

1983-01-01

Construction, capacitance and dissipation factor, and electrode materials for single layer capacitors are discussed. Basic construction, phosphosilicate glass, ten layer capacitors, twenty layer capacitors, stress measurements, buffered oxide layers, and 30 layer capacitors are also discussed. Spin-on phosphosilicate glass is addressed. Polymers as dielectric materials are also considered.

Organic Solar Cells Based on WO2.72 Nanowire Anode Buffer Layer with Enhanced Power Conversion Efficiency and Ambient Stability.

PubMed

You, Longzhen; Liu, Bin; Liu, Tao; Fan, Bingbing; Cai, Yunhao; Guo, Lin; Sun, Yanming

2017-04-12

Tungsten oxide as an alternative to conventional acidic PEDOT:PSS has attracted much attention in organic solar cells (OSCs). However, the vacuum-processed WO 3 layer and high-temperature sol-gel hydrolyzed WO X are incompatible with large-scale manufacturing of OSCs. Here, we report for the first time that a specific tungsten oxide WO 2.72 (W 18 O 49 ) nanowire can function well as the anode buffer layer. The nw-WO 2.72 film exhibits a high optical transparency. The power conversion efficiency (PCE) of OSCs based on three typical polymer active layers PTB7:PC 71 BM, PTB7-Th:PC 71 BM, and PDBT-T1:PC 71 BM with nw-WO 2.72 layer were improved significantly from 7.27 to 8.23%, from 8.44 to 9.30%, and from 8.45 to 9.09%, respectively compared to devices with PEDOT:PSS. Moreover, the photovoltaic performance of OSCs based on small molecule p-DTS(FBTTh 2 ) 2 :PC 71 BM active layer was also enhanced with the incorporation of nw-WO 2.72 . The enhanced performance is mainly attributed to the improved short-circuit current density (J sc ), which benefits from the oxygen vacancies and the surface apophyses for better charge extraction. Furthermore, OSCs based on nw-WO 2.72 show obviously improved ambient stability compared to devices with PEDOT:PSS layer. The results suggest that nw-WO 2.72 is a promising candidate for the anode buffer layer materials in organic solar cells.

Growth and characterization of CdS buffer layers by CBD and MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrone, A.A.; Huang, C.; Li, S.S.

1999-03-01

Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,&hthinsp;Ga)Se{sub 2} (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature ({approximately}150&hthinsp;{degree}C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigationsmore » of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. {copyright} {ital 1999 American Institute of Physics.}« less

Stress generation and evolution in oxide heteroepitaxy

NASA Astrophysics Data System (ADS)

Fluri, Aline; Pergolesi, Daniele; Wokaun, Alexander; Lippert, Thomas

2018-03-01

Many physical properties of oxides can be changed by inducing lattice distortions in the crystal through heteroepitaxial growth of thin films. The average lattice strain can often be tuned by changing the film thickness or using suitable buffer layers between film and substrate. The exploitation of the full potential of strain engineering for sample or device fabrication rests on the understanding of the fundamental mechanisms of stress generation and evolution. For this study an optical measurement of the substrate curvature is used to monitor in situ how the stress builds up and relaxes during the growth of oxide thin films by pulsed laser deposition. The relaxation behavior is correlated with the growth mode, which is monitored simultaneously with reflection high-energy electron diffraction. The stress relaxation data is fitted and compared with theoretical models for stress evolution which were established for semiconductor epitaxy. The initial stage of the growth appears to be governed by surface stress and surface energy effects, while the subsequent stress relaxation is found to be fundamentally different between films grown on single-crystal substrates and on buffer layers. The first case can be rationalized with established theoretical models, but these models fail in the attempt to describe the growth on buffer layers. This is most probably due to the larger average density of crystalline defects in the buffer layers, which leads to a two-step stress relaxation mechanism, driven first by the nucleation and later by the migration of dislocation lines.

Atomic Layer Deposition of Aluminum Sulfide: Growth Mechanism and Electrochemical Evaluation in Lithium-Ion Batteries

DOE PAGES

Meng, Xiangbo; Cao, Yanqiang; Libera, Joseph A.; ...

2017-10-01

This work describes the synthesis of aluminum sulfide (AlS x) thin films by atomic layer deposition (ALD) using tris(dimethylamido)aluminum and hydrogen sulfide. We employed a suite of in situ measurement techniques to explore the ALD AlS x growth mechanism, including quartz crystal microbalance, quadrupole mass spectrometry, and Fourier transform infrared spectroscopy. A variety of ex situ characterization techniques were used to determine the growth characteristics, morphology, elemental composition, and crystallinity of the resultant AlS x films. This study revealed that the AlS x growth was self-limiting in the temperature range 100–250 °C, and the growth per cycle decreased linearly withmore » increasing temperature from ~0.45 Å/cycle at 100 °C to ~0.1 Å/cycle at 250 °C. The AlSx films were amorphous in this temperature range. We conducted electrochemical testing to evaluate the ALD AlS x as a potential anode material for lithium-ion batteries (LIBs). Finally, the ALD AlS x exhibited reliable cyclability over 60 discharge–charge cycles with a sustainable discharge capacity of 640 mAh/g at a current density of 100 mA/g in the voltage window of 0.6–3.5 V.« less

Atomic Layer Deposition of Aluminum Sulfide: Growth Mechanism and Electrochemical Evaluation in Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Xiangbo; Cao, Yanqiang; Libera, Joseph A.

This work describes the synthesis of aluminum sulfide (AlS x) thin films by atomic layer deposition (ALD) using tris(dimethylamido)aluminum and hydrogen sulfide. We employed a suite of in situ measurement techniques to explore the ALD AlS x growth mechanism, including quartz crystal microbalance, quadrupole mass spectrometry, and Fourier transform infrared spectroscopy. A variety of ex situ characterization techniques were used to determine the growth characteristics, morphology, elemental composition, and crystallinity of the resultant AlS x films. This study revealed that the AlS x growth was self-limiting in the temperature range 100–250 °C, and the growth per cycle decreased linearly withmore » increasing temperature from ~0.45 Å/cycle at 100 °C to ~0.1 Å/cycle at 250 °C. The AlSx films were amorphous in this temperature range. We conducted electrochemical testing to evaluate the ALD AlS x as a potential anode material for lithium-ion batteries (LIBs). Finally, the ALD AlS x exhibited reliable cyclability over 60 discharge–charge cycles with a sustainable discharge capacity of 640 mAh/g at a current density of 100 mA/g in the voltage window of 0.6–3.5 V.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S) 2 and Cu 2ZnSn(Se,S) 4 devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se) 2 (CIGS) or Cu 2ZnSn(S,Se) 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Lastly, our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S) 2 and Cu 2ZnSn(Se,S) 4 devices

DOE PAGES

Varley, J. B.; Lordi, V.

2014-08-08

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se) 2 (CIGS) or Cu 2ZnSn(S,Se) 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore » effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Lastly, our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.« less

On the neutralization of acid rock drainage by carbonate and silicate minerals

NASA Astrophysics Data System (ADS)

Sherlock, E. J.; Lawrence, R. W.; Poulin, R.

1995-02-01

The net result of acid-generating and-neutralizing reactions within mining wastes is termed acid rock drainage (ARD). The oxidation of sulfide minerals is the major contributor to acid generation. Dissolution and alteration of various minerals can contribute to the neutralization of acid. Definitions of alkalinity, acidity, and buffer capacity are reviewed, and a detailed discussion of the dissolution and neutralizing capacity of carbonate and silicate minerals related to equilibium conditions, dissolution mechanism, and kinetics is provided. Factors that determine neutralization rate by carbonate and silicate minerals include: pH, PCO 2, equilibrium conditions, temperature, mineral composition and structure, redox conditions, and the presence of “foreign” ions. Similar factors affect sulfide oxidation. Comparison of rates shows sulfides react fastest, followed by carbonates and silicates. The differences in the reaction mechanisms and kinetics of neutralization have important implications in the prediction, control, and regulation of ARD. Current static and kinetic prediction methods upon which mine permitting, ARD control, and mine closure plans are based do not consider sample mineralogy or the kinetics of the acid-generating and-neutralizing reactions. Erroneous test interpretations and predictions can result. The importance of considering mineralogy for site-specific interpretation is highlighted. Uncertainty in prediction leads to difficulties for the mine operator in developing satisfactory and cost-effective control and remediation measures. Thus, the application of regulations and guidelines for waste management planning need to beflexible.