Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon (Open Access Publisher’s Version)

DTIC Science & Technology

2016-01-04

Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon Article in Scientific Reports · January 2016 DOI : 10.1038/srep18860 CITATIONS 5 READS...1Scientific RepoRts | 6:18860 | DOI : 10.1038/srep18860 www.nature.com/scientificreports Printed Large-Area Single-Mode Photonic Crystal Bandedge...bandgap group III-V materials on Si1,4–11 through wafer bonding, printing, and direct-growth. Most lasers demonstrated so far are edge-emitting

Transverse Mode Dynamics and Ultrafast Modulation of Vertical-Cavity Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

2002-01-01

We show that multiple transverse mode dynamics of VCSELs (Vertical-Cavity Surface-Emitting Lasers) can be utilized to generate ultrafast intensity modulation at a frequency over 100 GHz, much higher than the relaxation oscillation frequency. Such multimode beating can be greatly enhanced by taking laser output from part of the output facet.

Quantitative RHEED Studies of MBE Growth of 3-5 Compounds

DTIC Science & Technology

1991-06-03

Vertical - Cavity Surface - Emitting Laser Using Molecular Beam Epitaxial ...Growth of Vertical Cavity Surface - emitting Lasers Our work under this ARO contract on the control of MBE growth has enhanced our ability to grow...pattern about the surface structure of nearly perfect crystals prepared by Molecular Beam Epitaxy ( MBE ) and to use these techniques

Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

NASA Astrophysics Data System (ADS)

Chizhevsky, V. N.

2018-01-01

For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi

1995-05-01

The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.

Multiperiod-grating surface-emitting lasers

NASA Technical Reports Server (NTRS)

Lang, Robert J. (Inventor)

1992-01-01

Surface-emitting distributed feedback (DFB) lasers are disclosed with hybrid gratings. A first-order grating is provided at one or both ends of the active region of the laser for retroreflection of light back into the active region, and a second-order or nonresonant grating is provided at the opposite end for coupling light out perpendicular to the surfaces of the laser or in some other selected direction. The gratings may be curved to focus light retroreflected into the active region and to focus light coupled out to a point. When so focused to a point, the DFB laser may be part of a monolithic read head for a laser recorded disk, or an optical coupler into an optical fiber.

Electrically injected visible vertical cavity surface emitting laser diodes

DOEpatents

Schneider, Richard P.; Lott, James A.

1994-01-01

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.

Electrically injected visible vertical cavity surface emitting laser diodes

DOEpatents

Schneider, R.P.; Lott, J.A.

1994-09-27

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Matrix addressable vertical cavity surface emitting laser array

NASA Astrophysics Data System (ADS)

Orenstein, M.; von Lehmen, A. C.; Chang-Hasnain, C.; Stoffel, N. G.; Harbison, J. P.

1991-02-01

The design, fabrication and characterization of 1024-element matrix-addressable vertical-cavity surface-emitting laser (VCSEL) arrays are described. A strained InGaAs quantum-well VCSEL structure was grown by MBE, and an array of 32 x 32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8 percent.

INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

NASA Astrophysics Data System (ADS)

Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

1987-12-01

The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

The influence of surface contamination on the ion emission from nanosecond-pulsed laser ablation of Al and Cu

NASA Astrophysics Data System (ADS)

Ullah, S.; Dogar, A. H.; Qayyum, H.; Rehman, Z. U.; Qayyum, A.

2018-04-01

Ions emitted from planar Al and Cu targets irradiated with a 1064 nm pulsed laser were investigated with the help of a time-resolving Langmuir probe. It was found that the intensity of the ions emitted from a target area rapidly decreases with the increasing number of laser shots, and seems to reach saturation after about 10 laser shots. The saturated intensity of Al and Cu ions was approximately 0.1 and 0.3 times the intensity of the respective ions measured at the first laser shot, respectively. The higher target ion intensity for the first few shots is thought to be due to the enhanced ionization of target atoms by vacuum-ultraviolet radiations emitted from the thermally excited/ionized surface contaminants. The reduction of target ion intensity with an increasing number of laser shots thus indicates the removal of contaminants from the irradiated surface area. Laser-cleaned Al and Cu surfaces were then allowed to be recontaminated with residual vacuum gases and the ion intensity was measured at various time delays. The prolonged exposure of the cleaned target to vacuum residual gases completely restores the ion intensity. Regarding surface contaminants removal, laser shots of higher intensities were found to be more effective than a higher number of laser shots having lower intensities.

Time-dynamics of the two-color emission from vertical-external-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Chernikov, A.; Wichmann, M.; Shakfa, M. K.; Scheller, M.; Moloney, J. V.; Koch, S. W.; Koch, M.

2012-01-01

The temporal stability of a two-color vertical-external-cavity surface-emitting laser is studied using single-shot streak-camera measurements. The collected data is evaluated via quantitative statistical analysis schemes. Dynamically stable and unstable regions for the two-color operation are identified and the dependence on the pump conditions is analyzed.

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

NASA Astrophysics Data System (ADS)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Vertical-cavity surface-emitting lasers - Design, growth, fabrication, characterization

NASA Astrophysics Data System (ADS)

Jewell, Jack L.; Lee, Y. H.; Harbison, J. P.; Scherer, A.; Florez, L. T.

1991-06-01

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 microns to above 50 microns. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching; packaging and arrays; and ultrasmall devices.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Shi, Z.; Xu, G.; McCann, P. J.; Fang, X. M.; Dai, N.; Felix, C. L.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.

2000-06-01

Midinfrared broadband high-reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors and vertical-cavity surface-emitting lasers (VCSELs) with PbSe as the active material were grown by molecular-beam epitaxy. Because of an extremely high index contrast, mirrors with only three quarter-wave layer pairs had reflectivities exceeding 99%. For pulsed optical pumping, a lead salt VCSEL emitting at the cavity wavelength of 4.5-4.6 μm operated nearly to room temperature (289 K).

Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

DTIC Science & Technology

2015-07-16

SECURITY CLASSIFICATION OF: The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 - 1.3 µm...2015 Approved for Public Release; Distribution Unlimited Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface...ABSTRACT Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Shang, C. Y.; Feng, Y.; Yan, C. L.; Zhao, Y. J.; Wang, Y. X.; Wang, X. H.; Liu, G. J.

2011-02-01

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.

2016-02-15

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers formore » the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.« less

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

DTIC Science & Technology

2000-06-23

vertical cavity surface emitting lasers ( VCSELs ) on GaAs is expected to be possible by... molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can...work with GaAs/AlAs DBR-mirrors is expected to lead to novel vertical cavity lasers for optical fiber communication systems. Acknowledgement

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Larsson, Anders; Lee, Luke P.

1991-01-01

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Oxygen measurements at high pressures with vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Wang, J.; Sanders, S. T.; Jeffries, J. B.; Hanson, R. K.

Measurements of oxygen concentration at high pressures (to 10.9 bar) were made using diode-laser absorption of oxygen A-band transitions near 760 nm. The wide current-tuning frequency range (>30 cm-1) of vertical cavity surface-emitting lasers (VCSELs) was exploited to enable the first scanned-wavelength demonstration of diode-laser absorption at high pressures; this strategy is more robust than fixed-wavelength strategies, particularly in hostile environments. The wide tuning range and rapid frequency response of the current tuning were further exploited to demonstrate wavelength-modulation absorption spectroscopy in a high-pressure environment. The minimum detectable absorbance demonstrated, 1×10-4, corresponds to 800 ppm-m oxygen detectivity at room temperature and is limited by etalon noise. The rapid- and wide-frequency tunability of VCSELs should significantly expand the application domain of absorption-based sensors limited in the past by the small current-tuning frequency range (typically <2 cm-1) of conventional edge-emitting diode lasers.

Single-mode operation of mushroom structure surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.J.; Dziura, T.G.; Wang, S.C.

1991-01-01

Mushroom structure vertical cavity surface emitting lasers with a 0.6 {mu}m GaAs active layer sandwiched by two Al{sub 0.6{sup {minus}}}Ga{sub 0.4}As-Al{sub 0.08}Ga{sub 0.92}As multilayers as top and bottom mirrors exhibit 15 mA pulsed threshold current at 880 nm. Single longitudinal and single transverse mode operation was achieved on lasers with a 5 {mu}m diameter active region at current levels near 2 {times} I{sub th}. The light output above threshold current was linearly polarized with a polarization ratio of 25:1.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

NASA Astrophysics Data System (ADS)

Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

2009-03-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

Graphene surface emitting terahertz laser: Diffusion pumping concept

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davoyan, Arthur R., E-mail: davoyan@seas.upenn.edu; Morozov, Mikhail Yu.; Popov, Vyacheslav V.

2013-12-16

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, andmore » limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.« less

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

Experimental Investigation and Computer Modeling of Optical Switching in Distributed Bragg Reflector and Vertical Cavity Surface Emitting Laser Structures.

DTIC Science & Technology

1995-12-01

of a Molecular Beam Epitaxy (MBE) system prior to growing a Vertical Cavity Surface Emitting Laser ( VCSEL ). VCSEL bistability is discussed later in...addition, optical bistability 1 in the reflectivity of a DBR, as well as in the lasing power, wavelength, and beam divergence of a lasing VCSEL are...Spectral Reflectivity of AlGaAs/AlAs VCSEL Top DBR Mirror Cavity Bottom DBR Mirror Substrate Output Beam Resonance Pump Minimum Stop Band Figure 2. VCSEL

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Kao, Yu-Jui; Yang, Ya-Yu; Sheu, Jinn-Kong

2012-02-27

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

Transverse junction vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Schaus, C. F.; Torres, A. J.; Cheng, Julian; Sun, S.; Hains, C.

1991-04-01

An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p(+)-p-n(+) transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at an 855.8-nm lasing wavelength.

Position and orientation tracking system

DOEpatents

Burks, Barry L.; DePiero, Fred W.; Armstrong, Gary A.; Jansen, John F.; Muller, Richard C.; Gee, Timothy F.

1998-01-01

A position and orientation tracking system presents a laser scanning appaus having two measurement pods, a control station, and a detector array. The measurement pods can be mounted in the dome of a radioactive waste storage silo. Each measurement pod includes dual orthogonal laser scanner subsystems. The first laser scanner subsystem is oriented to emit a first line laser in the pan direction. The second laser scanner is oriented to emit a second line laser in the tilt direction. Both emitted line lasers scan planes across the radioactive waste surface to encounter the detector array mounted on a target robotic vehicle. The angles of incidence of the planes with the detector array are recorded by the control station. Combining measurements describing each of the four planes provides data for a closed form solution of the algebraic transform describing the position and orientation of the target robotic vehicle.

Position and orientation tracking system

DOEpatents

Burks, B.L.; DePiero, F.W.; Armstrong, G.A.; Jansen, J.F.; Muller, R.C.; Gee, T.F.

1998-05-05

A position and orientation tracking system presents a laser scanning apparatus having two measurement pods, a control station, and a detector array. The measurement pods can be mounted in the dome of a radioactive waste storage silo. Each measurement pod includes dual orthogonal laser scanner subsystems. The first laser scanner subsystem is oriented to emit a first line laser in the pan direction. The second laser scanner is oriented to emit a second line laser in the tilt direction. Both emitted line lasers scan planes across the radioactive waste surface to encounter the detector array mounted on a target robotic vehicle. The angles of incidence of the planes with the detector array are recorded by the control station. Combining measurements describing each of the four planes provides data for a closed form solution of the algebraic transform describing the position and orientation of the target robotic vehicle. 14 figs.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Multiple wavelength tunable surface-emitting laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie J.; Harbison, J. P.; Zah, Chung-En; Maeda, M. W.; Florez, L. T.; Stoffel, N. G.; Lee, Tien-Pei

1991-06-01

Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental results are given. The authors obtained 140 unique, uniformly separated, single-mode wavelength emissions from a 7 x 20 VCSEL array. Large total wavelength span (about 430 A) and small wavelength separation (about 3 A) are obtained simultaneously with uncompromised laser performance. All 140 lasers have nearly the same threshold currents, voltages, and resistances. Wavelength tuning is obtained by using a three-mirror coupled-cavity configuration. The three-mirror laser is a two-terminal device and requires only one top contact. Discrete tuning with a range as large as 61 A is achieved with a small change in drive current of only 10.5 mA. The VCSEL output power variation is within 5 dB throughout the entire tuning range.

Beam steering via resonance detuning in coherently coupled vertical cavity laser arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Matthew T., E-mail: matthew.johnson.9@us.af.mil; Siriani, Dominic F.; Peun Tan, Meng

2013-11-11

Coherently coupled vertical-cavity surface-emitting laser arrays offer unique advantages for nonmechanical beam steering applications. We have applied dynamic coupled mode theory to show that the observed temporal phase shift between vertical-cavity surface-emitting array elements is caused by the detuning of their resonant wavelengths. Hence, a complete theoretical connection between the differential current injection into array elements and the beam steering direction has been established. It is found to be a fundamentally unique beam-steering mechanism with distinct advantages in efficiency, compactness, speed, and phase-sensitivity to current.

Investigation of vertical cavity surface emitting laser dynamics for neuromorphic photonic systems

NASA Astrophysics Data System (ADS)

Hurtado, A.; Schires, K.; Henning, I. D.; Adams, M. J.

2012-03-01

We report an approach based upon vertical cavity surface emitting lasers (VCSELs) to reproduce optically different behaviors exhibited by biological neurons but on a much faster timescale. The technique proposed is based on the polarization switching and nonlinear dynamics induced in a single VCSEL under polarized optical injection. The particular attributes of VCSELs and the simple experimental configuration used in this work offer prospects of fast, reconfigurable processing elements with excellent fan-out and scaling potentials for use in future computational paradigms and artificial neural networks.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

1995-01-01

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD

NASA Astrophysics Data System (ADS)

Koyama, F.; Mukaihara, T.; Hayashi, Y.; Ohnoki, N.; Hatori, N.; Iga, K.

1995-01-01

We present a novel approach of on-wafer wavelength control for vertical cavity surface-emitting lasers (VCSEL's) using nonplanar metalorganic chemical vapor deposition. The resonant wavelength of 980 nm VCSEL's grown on a patterned substrate can be controlled in the wavelength range over 45 nm by changing the size of circular patterns. A multi-wavelength VCSEL linear array was fabricated by using this technique. The proposed method will be useful for multi-wavelength VCSEL arrays as well as for the cancellation of wavelength nonuniformity over a wafer.

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers.

PubMed

Germann, Tim David; Hofmann, Werner; Nadtochiy, Alexey M; Schulze, Jan-Hindrik; Mutig, Alex; Strittmatter, André; Bimberg, Dieter

2012-02-27

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for a detailed physical understanding of this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect is used to modulate individual VCSEL modes by more than 20 dB with an extremely small EOM voltage change of less than 100 mV. Spectral mode analysis reveals modulation of higher order modes and very low wavelength chirp of < 0.5 nm. Dynamic experiments and simulation predict an intrinsic bandwidth of the EOM VCSEL exceeding 50 GHz.

Self-localized structures in vertical-cavity surface-emitting lasers with external feedback.

PubMed

Paulau, P V; Gomila, D; Ackemann, T; Loiko, N A; Firth, W J

2008-07-01

In this paper, we analyze a model of broad area vertical-cavity surface-emitting lasers subjected to frequency-selective optical feedback. In particular, we analyze the spatio-temporal regimes arising above threshold and the existence and dynamical properties of cavity solitons. We build the bifurcation diagram of stationary self-localized states, finding that branches of cavity solitons emerge from the degenerate Hopf bifurcations marking the homogeneous solutions with maximal and minimal gain. These branches collide in a saddle-node bifurcation, defining a maximum pump current for soliton existence that lies below the threshold of the laser without feedback. The properties of these cavity solitons are in good agreement with those observed in recent experiments.

Tunable vertical cavity surface emitting lasers for use in the near infrared biological window

NASA Astrophysics Data System (ADS)

Kitsmiller, Vincent J.; Dummer, Matthew; Johnson, Klein; O'Sullivan, Thomas D.

2018-02-01

We present a near-infrared tunable vertical cavity surface emitting laser (VCSEL) based upon a unique electrothermally tunable microelectromechanical systems (MEMS) topside mirror designed for tissue imaging and sensing. At room temperature, the laser is tunable from 769-782nm with single mode CW output and a peak output power of 1.3mW. We show that the tunable VCSEL is suitable for use in frequency domain diffuse optical spectroscopy by measuring the optical properties of a tissue-simulating phantom over the tunable range. These results indicate that tunable VCSELs may be an attractive choice to enable high spectral resolution optical sensing in a wearable format.

Surface-emitting circular DFB, disk- and ring- Bragg resonator lasers with chirped gratings: a unified theory and comparative study.

PubMed

Sun, Xiankai; Yariv, Amnon

2008-06-09

We have developed a theory that unifies the analysis of the modal properties of surface-emitting chirped circular grating lasers. This theory is based on solving the resonance conditions which involve two types of reflectivities of chirped circular gratings. This approach is shown to be in agreement with previous derivations which use the characteristic equations. Utilizing this unified analysis, we obtain the modal properties of circular DFB, disk-, and ring- Bragg resonator lasers. We also compare the threshold gain, single mode range, quality factor, emission efficiency, and modal area of these types of circular grating lasers. It is demonstrated that, under similar conditions, disk Bragg resonator lasers have the highest quality factor, the highest emission efficiency, and the smallest modal area, indicating their suitability in low-threshold, high-efficiency, ultracompact laser design, while ring Bragg resonator lasers have a large single mode range, high emission efficiency, and large modal area, indicating their suitability for high-efficiency, large-area, high-power applications.

High power VCSELs for miniature optical sensors

NASA Astrophysics Data System (ADS)

Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

2010-02-01

Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Xia, Jinan; Hoan O, Beom; Gol Lee, Seung; Hang Lee, El

2005-03-01

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

Vertical-cavity surface-emitting laser sources for gigahertz-bandwidth, multiwavelength frequency-domain photon migration

NASA Astrophysics Data System (ADS)

O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.

2017-10-01

Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

NASA Astrophysics Data System (ADS)

Gobet, Mathilde; Bae, Hopil P.; Sarmiento, Tomas; Harris, James S.

2008-02-01

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1994-04-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. In this program, we concentrated on novel epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays.

Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Karachinskii, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Blokhin, S. A.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Voropaev, K. O.; Ionov, A. S.; Agustin, M.; Ledentsov, N. N.; Egorov, A. Yu.

2018-01-01

The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In0.74Ga0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40-45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources

NASA Astrophysics Data System (ADS)

Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro; Isu, Toshiro

2017-11-01

Two-color surface-emitting lasers were fabricated using a GaAs-based coupled multilayer cavity structure grown by molecular beam epitaxy. InGaAs/GaAs multiple quantum wells were introduced only in the upper cavity for two-mode emission in the near-infrared region. Two-color lasing of the device was successfully demonstrated under pulsed current operations at room temperature. We also observed good temporal coherence of the two-color laser light using a Michelson interferometer. A coherent terahertz source is expected when a wafer-bonded coupled cavity consisting of (0 0 1) and non-(0 0 1) epitaxial films is used for the two-color laser device, in which the difference-frequency generation can be enabled by the second-order nonlinear response in the lower cavity.

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Y.J.; Dziura, T.G.; Wang, S.C.

1990-05-07

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

NASA Astrophysics Data System (ADS)

Yang, Ying Jay; Dziura, Thaddeus G.; Wang, S. C.; Hsin, Wei; Wang, Shyh

1990-05-01

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2-0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2-4 μm diameter active region formed by chemical selective etching, and sandwiched between two Al0.05Ga0.95 As/ Al0.53Ga0.47 As distributed Bragg reflectors of very high reflectivity (98-99%) grown by metalorganic chemical vapor deposition.

Tunable vertical-cavity surface-emitting laser with feedback to implement a pulsed neural model. 2. High-frequency effects and optical coupling.

PubMed

Romariz, Alexandre R S; Wagner, Kelvin H

2007-07-20

The operation of an optoelectronic dynamic neural model implementation is extended to higher frequencies. A simplified model of thermal effects in vertical-cavity surface-emitting lasers correctly predicts the qualitative changes in the nonlinear mapping implementation with frequency. Experiments and simulations show the expected resonance properties of this model neuron, along with the possibility of other dynamic effects in addition to the ones observed in the original FitzHugh-Nagumo equations. Results of optical coupling between two similar pulsing artificial neurons are also presented.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-03-14

The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.

Molecular beam epitaxy growth method for vertical-cavity surface-emitting laser resonators based on substrate thermal emission

NASA Astrophysics Data System (ADS)

Talghader, J. J.; Hadley, M. A.; Smith, J. S.

1995-12-01

A molecular beam epitaxy growth monitoring method is developed for distributed Bragg reflectors and vertical-cavity surface-emitting laser (VCSEL) resonators. The wavelength of the substrate thermal emission that corresponds to the optical cavity resonant wavelength is selected by a monochromator and monitored during growth. This method allows VCSEL cavities of arbitrary design wavelength to be grown with a single control program. This letter also presents a theoretical model for the technique which is based on transmission matrices and simple thermal emission properties. Demonstrated reproducibility of the method is well within 0.1%.

MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

NASA Astrophysics Data System (ADS)

Wu, C. Z.; Tsou, Y.; Tsai, C. M.

1999-05-01

Evaluation of producing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure by molecular beam epitaxy (MBE) without resorting to any real-time monitoring technique is reported. Continuous grading of Al xGa 1- xAs between x=0.12 to x=0.92 was simply achieved by changing the Al and Ga cell temperatures in no more than three steps per DBR period. Highly uniform DBR and VCSEL structures were demonstrated with a multi-wafer MBE system. Run-to-run standard deviation of reflectance spectrum center wavelength was 0.5% and 1.4% for VCSEL etalon wavelength.

Method and apparatus for real time weld monitoring

DOEpatents

Leong, Keng H.; Hunter, Boyd V.

1997-01-01

An improved method and apparatus are provided for real time weld monitoring. An infrared signature emitted by a hot weld surface during welding is detected and this signature is compared with an infrared signature emitted by the weld surface during steady state conditions. The result is correlated with weld penetration. The signal processing is simpler than for either UV or acoustic techniques. Changes in the weld process, such as changes in the transmitted laser beam power, quality or positioning of the laser beam, change the resulting weld surface features and temperature of the weld surface, thereby resulting in a change in the direction and amount of infrared emissions. This change in emissions is monitored by an IR sensitive detecting apparatus that is sensitive to the appropriate wavelength region for the hot weld surface.

A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Chung-Yi; Tsai, Wen-Shing

2018-02-01

This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

Analytical coupled-wave model for photonic crystal surface-emitting quantum cascade lasers.

PubMed

Wang, Zhixin; Liang, Yong; Yin, Xuefan; Peng, Chao; Hu, Weiwei; Faist, Jérôme

2017-05-15

An analytical coupled-wave model is developed for surface-emitting photonic-crystal quantum cascade lasers (PhC-QCLs). This model provides an accurate and efficient analysis of full three-dimensional device structure with large-area cavity size. Various laser properties of interest including the band structure, mode frequency, cavity loss, mode intensity profile, and far field pattern (FFP), as well as their dependence on PhC structures and cavity size, are investigated. Comparison with numerical simulations confirms the accuracy and validity of our model. The calculated FFP and polarization profile well explain the previously reported experimental results. In particular, we reveal the possibility of switching the lasing modes and generating single-lobed FFP by properly tuning PhC structures.

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Long wavelength vertical cavity surface emitting laser

DOEpatents

Choquette, Kent D.; Klem, John F.

2005-08-16

Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.

Coupling strategies for coherent operation of quantum cascade ring laser arrays

NASA Astrophysics Data System (ADS)

Schwarzer, Clemens; Yao, Y.; Mujagić, E.; Ahn, S.; Schrenk, W.; Chen, J.; Gmachl, C.; Strasser, G.

2011-12-01

We report the design, fabrication and operation of coherently coupled ring cavity surface emitting quantum cascade lasers, emitting at wavelength around 8 μm. Special emphasis is placed on the evaluation of optimal coupling approaches and corresponding parameters. Evanescent field coupling as well as direct coupling where both devices are physically connected is presented. Furthermore, exploiting the Vernier-effect was used to obtain enhanced mode selectivity and robust coherent coupling of two ring-type quantum cascade lasers. Investigations were performed at pulsed room-temperature operation.

Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242

DTIC Science & Technology

1992-01-01

equation and taking into account the phase changes which occur at the surface of the irradiated solid. Intense pulsed laser irradiation induces rapid...resulted in the realization of pn junction light emitting devices operating in the blue and blue/green portion of the spectrum such as pulsed lasers (3M...such as pulse lasers [3-51 and multiple quantum well light emitting devices 16). It is expected that these recent developments will open a new stage of

Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers.

PubMed

Cao, J R; Lee, Po-Tsung; Choi, Sang-Jun; O'Brien, John D; Dapkus, P Daniel

2002-01-01

Lithographic tuning of operating wavelengths in a photonic crystal laser array is demonstrated. The photonic crystal lattice constant is varied by 2 nm between elements of the array, and a wavelength spacing of approximately 4 nm is achieved.

Time-resolved spectral characterization of ring cavity surface emitting and ridge-type distributed feedback quantum cascade lasers by step-scan FT-IR spectroscopy.

PubMed

Brandstetter, Markus; Genner, Andreas; Schwarzer, Clemens; Mujagic, Elvis; Strasser, Gottfried; Lendl, Bernhard

2014-02-10

We present the time-resolved comparison of pulsed 2nd order ring cavity surface emitting (RCSE) quantum cascade lasers (QCLs) and pulsed 1st order ridge-type distributed feedback (DFB) QCLs using a step-scan Fourier transform infrared (FT-IR) spectrometer. Laser devices were part of QCL arrays and fabricated from the same laser material. Required grating periods were adjusted to account for the grating order. The step-scan technique provided a spectral resolution of 0.1 cm(-1) and a time resolution of 2 ns. As a result, it was possible to gain information about the tuning behavior and potential mode-hops of the investigated lasers. Different cavity-lengths were compared, including 0.9 mm and 3.2 mm long ridge-type and 0.97 mm (circumference) ring-type cavities. RCSE QCLs were found to have improved emission properties in terms of line-stability, tuning rate and maximum emission time compared to ridge-type lasers.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Progress and issues for high-speed vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lear, Kevin L.; Al-Omari, Ahmad N.

2007-02-01

Extrinsic electrical, thermal, and optical issues rather than intrinsic factors currently constrain the maximum bandwidth of directly modulated vertical cavity surface emitting lasers (VCSELs). Intrinsic limits based on resonance frequency, damping, and K-factor analysis are summarized. Previous reports are used to compare parasitic circuit values and electrical 3dB bandwidths and thermal resistances. A correlation between multimode operation and junction heating with bandwidth saturation is presented. The extrinsic factors motivate modified bottom-emitting structures with no electrical pads, small mesas, copper plated heatsinks, and uniform current injection. Selected results on high speed quantum well and quantum dot VCSELs at 850 nm, 980 nm, and 1070 nm are reviewed including small-signal 3dB frequencies up to 21.5 GHz and bit rates up to 30 Gb/s.

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

NASA Technical Reports Server (NTRS)

Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

2007-01-01

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

Surface-emitting terahertz quantum cascade lasers with continuous-wave power in the tens of milliwatt range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Gangyi, E-mail: gangyi.xu@mail.sitp.ac.cn; Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Li, Lianhe

2014-03-03

We demonstrate efficient surface-emitting terahertz frequency quantum cascade lasers with continuous wave output powers of 20–25 mW at 15 K and maximum operating temperatures of 80–85 K. The devices employ a resonant-phonon depopulation active region design with injector, and surface emission is realized using resonators based on graded photonic heterostructures (GPHs). GPHs can be regarded as energy wells for photons and have recently been implemented through grading the period of the photonic structure. In this paper, we show that it is possible to keep the period constant and grade instead the lateral metal coverage across the GPH. This strategy ensures spectrally single-mode operationmore » across the whole laser dynamic range and represents an additional degree of freedom in the design of confining potentials for photons.« less

Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

PubMed Central

Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

2014-01-01

We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

Cherenkov emission of terahertz surface plasmon polaritons from a superluminal optical spot on a structured metal surface.

PubMed

Bakunov, M I; Tsarev, M V; Hangyo, M

2009-05-25

We propose to launch terahertz surface plasmon polaritons on a structured metal surface by using a femtosecond laser pulse obliquely incident on a strip of an electro-optic material deposited on the surface. The laser pulse creates a nonlinear polarization that moves along the strip with a superluminal velocity and emits surface terahertz waves via the Cherenkov radiation mechanism. We calculate the radiated fields and frequency distribution of the radiated energy for a grooved perfect-conductor surface with a GaAs strip illuminated by Ti:sapphire laser. This technique can be used to perform surface terahertz spectroscopy.

Predicting threshold and location of laser damage on optical surfaces

DOEpatents

Siekhaus, Wigbert

1987-01-01

An apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities comprising, a focused and pulsed laser, an photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

InP-based three-dimensional photonic integrated circuits

NASA Astrophysics Data System (ADS)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Dynamics of formation of the liquid-drop phase of laser erosion jets near the surfaces of metal targets

NASA Astrophysics Data System (ADS)

Goncharov, V. K.; Kontsevoi, V. L.; Puzyrev, M. V.

1995-03-01

An investigation was made of laser erosion jets formed at 0.1-1.5 mm above the surfaces of Pb, Co, Ni, Sn, and Zn targets. A neodymium laser emitting rectangular pulses of 400 μs duration and of energy up to 400 J was used. The diameters, as well as the number density and volume fraction of the metal particles present in the jet, were measured. An analysis of the results showed that the metal liquid drops broke up near the surface and experienced additional evaporation because of their motion opposite to the laser beam.

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

Quantum dots for GaAs-based surface emitting lasers at 1300 nm

NASA Astrophysics Data System (ADS)

Grundmann, M.; Ledentsov, N. N.; Hopfer, F.; Heinrichsdorff, F.; Guffarth, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Musikhin, Yu. G.; Alferov, Zh. I.; Lott, J. A.; Zhakharov, N. D.; Werner, P.

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Phasing surface emitting diode laser outputs into a coherent laser beam

DOEpatents

Holzrichter, John F [Berkeley, CA

2006-10-10

A system for generating a powerful laser beam includes a first laser element and at least one additional laser element having a rear laser mirror, an output mirror that is 100% reflective at normal incidence and <5% reflective at an input beam angle, and laser material between the rear laser mirror and the output mirror. The system includes an injector, a reference laser beam source, an amplifier and phase conjugater, and a combiner.

Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates

NASA Astrophysics Data System (ADS)

Kamath, K.; Bhattacharya, P.; Singh, J.

1997-05-01

Multispectral semiconductor laser arrays on single chip is demonstrated by molecular beam epitaxial (MBE) growth of {In0.2Ga0.8As}/{GaAs} quantum well lasers on GaAs (1 0 0) substrates patterned by dry etching. No regrowth is needed for simple edge emitting lasers. It was observed that the laser characteristics are not degraded by the patterned growth. The shift in the emission wavelength obtained by this method can be controlled by varying the width of the pre-patterned ridges as well as by selecting the regions with different number of vertical sidewalls on both sides. We have also shown that multispectral vertical cavity surface emitting laser (VCSEL) arrays can be made by this technique with a single regrowth.

AlGaAs phased array laser for optical communications

NASA Technical Reports Server (NTRS)

Carlson, N. W.

1989-01-01

Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to 500 mW) while maintaining a diffraction limited, single lobed output beam. Indeed, although the diffraction limit was achieved in this type of device, it was at low powers and in the double lobed radiation pattern characteristic of out-of-phase coupling. Grating surface emitting (GSE) arrays were, therefore, investigated with more promising results. The incorporation of second order gratings in distribute Bragg reflector (DBR) structures allows surface emission, and can be configured to allow injection locking and lateral coupling to populate 2-D arrays that should be able to reach power levels commensurate with the needs of high performance, free space optical communications levels. Also, a new amplitude modulation scheme was developed for GSE array operation.

Mid-infrared surface transmitting and detecting quantum cascade device for gas-sensing

PubMed Central

Harrer, Andreas; Szedlak, Rolf; Schwarz, Benedikt; Moser, Harald; Zederbauer, Tobias; MacFarland, Donald; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Lendl, Bernhard; Strasser, Gottfried

2016-01-01

We present a bi-functional surface emitting and surface detecting mid-infrared device applicable for gas-sensing. A distributed feedback ring quantum cascade laser is monolithically integrated with a detector structured from a bi-functional material for same frequency lasing and detection. The emitted single mode radiation is collimated, back reflected by a flat mirror and detected by the detector element of the sensor. The surface operation mode combined with the low divergence emission of the ring quantum cascade laser enables for long analyte interaction regions spatially separated from the sample surface. The device enables for sensing of gaseous analytes which requires a relatively long interaction region. Our design is suitable for 2D array integration with multiple emission and detection frequencies. Proof of principle measurements with isobutane (2-methylpropane) and propane as gaseous analytes were conducted. Detectable concentration values of 0–70% for propane and 0–90% for isobutane were reached at a laser operation wavelength of 6.5 μm utilizing a 10 cm gas cell in double pass configuration. PMID:26887891

Surface-plasmon--ion interaction in laser ablation of ions from a surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ritchie, R.H.; Manson, J.R.; Echenique, P.M.

1994-01-15

Experimental work by Shea and Compton suggests that Ag[sup +] ions emitted from a roughened Ag surface irradiated by a nanosecond or picosecond laser beam may absorb the full energy of the Ag surface plasmon (SP). We have modeled this process as an inverse bremsstrahlung-type absorption of the SP quantum by an Ag[sup +] ion which undergoes a collision with the surface. We estimate the absorption probability and find it to be consistent with the Shea-Compton results.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Coupled-cavity surface-emitting lasers: spectral and polarization threshold characteristics and electrooptic switching.

PubMed

Panajotov, Krassimir P; Zujewski, Mateusz; Thienpont, Hugo

2010-12-20

We study spectral and polarization threshold characteristics of coupled-cavity Vertical-Surface-Emitting Lasers (CC-VCSEL) on the base of a simple matrix approach. We show that strong wavelength discrimination can be achieved in CC-VCSELs by slightly detuning the cavities. However, polarization discrimination is not provided by the coupled-cavity design. We also consider the case of reverse-biasing one of the cavities, i.e. using it as a modulator via linear and/or quadratic electrooptic effect. Such a CC-VCSEL can act as a voltage-controlled polarization or wavelength switching device that is decoupled from the laser design and can be optimized for high modulation speed. We also show that using QD stack instead of quantum wells in the top cavity would lead to significant reduction of the driving electrical field.

Photonic generation of polarization-resolved wideband chaos with time-delay concealment in three-cascaded vertical-cavity surface-emitting lasers.

PubMed

Liu, Huijie; Li, Nianqiang; Zhao, Qingchun

2015-05-10

Optical chaos generated by chaotic lasers has been widely used in several important applications, such as chaos-based communications and high-speed random-number generators. However, these applications are susceptible to degradation by the presence of time-delay (TD) signature identified from the chaotic output. Here we propose to achieve the concealment of TD signature, along with the enhancement of chaos bandwidth, in three-cascaded vertical-cavity surface-emitting lasers (VCSELs). The cascaded system is composed of an external-cavity master VCSEL, a solitary intermediate VCSEL, and a solitary slave VCSEL. Through mapping the evolutions of TD signature and chaos bandwidth in the parameter space of the injection strength and frequency detuning, photonic generation of polarization-resolved wideband chaos with TD concealment is numerically demonstrated for wide regions of the injection parameters.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Predicting threshold and location of laser damage on optical surfaces

DOEpatents

Siekhaus, W.

1985-02-04

Disclosed is an apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities. The apparatus comprises a focused and pulsed laser, a photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Wang, Yang; Song, Hai-Ying; Liu, H. Y.; Liu, Shi-Bing

2017-07-01

We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Visible light emitting vertical cavity surface emitting lasers

DOEpatents

Bryan, Robert P.; Olbright, Gregory R.; Lott, James A.; Schneider, Jr., Richard P.

1995-01-01

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

Visible light emitting vertical cavity surface emitting lasers

DOEpatents

Bryan, R.P.; Olbright, G.R.; Lott, J.A.; Schneider, R.P. Jr.

1995-06-27

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of {lambda}/n, typically within the green to red portion of the visible spectrum. 10 figs.

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

NASA Astrophysics Data System (ADS)

Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

2003-04-01

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

PubMed

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

Photopumped infrared vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Hadji, E.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

1996-04-01

The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K.

Vertical electro-absorption modulator design and its integration in a VCSEL

NASA Astrophysics Data System (ADS)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

2018-04-01

Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

Optical Phased Array Antennas using Coupled Vertical Cavity Surface Emitting Lasers

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Rojas, Roberto A.; Nessel, James A.; Miranda, Felix A.

2007-01-01

High data rate communication links are needed to meet the needs of NASA as well as other organizations to develop space-based optical communication systems. These systems must be robust to high radiation environments, reliable, and operate over a wide temperature range. Highly desirable features include beam steering capability, reconfigurability, low power consumption, and small aperture size. Optical communication links, using coupled vertical cavity surface emitting laser radiating elements are promising candidates for the transmit portion of these communication links. In this talk we describe a mission scenario, and how the antenna requirements are derived from the mission needs. We describe a potential architecture for this type of antenna, and outline the advantages and drawbacks of this approach relative to competing technologies. The technology we are proposing used coupled arrays of 1550 nm vertical cavity surface emitting lasers for transmission. The feasibility of coupling these arrays together, to form coherent high-power beams that can be modulated at data rates exceeding 1 Gbps, will be explored. We will propose an architecture that enables electronic beam steering, thus mitigating the need for ancillary acquisition, tracking and beam pointing equipment such as needed for current optical communicatin systems. The beam-steering capability we are proposing also opens the possibility of using this technology for inter-satellite communicatin links, and satellite-to-surface links.

Cylindrically distributing optical fiber tip for uniform laser illumination of hollow organs

NASA Astrophysics Data System (ADS)

Buonaccorsi, Giovanni A.; Burke, T.; MacRobert, Alexander J.; Hill, P. D.; Essenpreis, Matthias; Mills, Timothy N.

1993-05-01

To predict the outcome of laser therapy it is important to possess, among other things, an accurate knowledge of the intensity and distribution of the laser light incident on the tissue. For irradiation of the internal surfaces of hollow organs, modified fiber tips can be used to shape the light distribution to best suit the treatment geometry. There exist bulb-tipped optical fibers emitting a uniform isotropic distribution of light suitable for the treatment of organs which approximate a spherical geometry--the bladder, for example. For the treatment of organs approximating a cylindrical geometry--e.g. the oesophagus--an optical fiber tip which emits a uniform cylindrical distribution of light is required. We report on the design, development and testing of such a device, the CLD fiber tip. The device was made from a solid polymethylmethacrylate (PMMA) rod, 27 mm in length and 4 mm in diameter. One end was shaped and 'silvered' to form a mirror which reflected the light emitted from the delivery fiber positioned at the other end of the rod. The shape of the mirror was such that the light fell with uniform intensity on the circumferential surface of the rod. This surface was coated with BaSO4 reflectance paint to couple the light out of the rod and onto the surface of the tissue.

Underwater Laser Micromilling of Commercially-Pure Titanium Using Different Scan Overlaps

NASA Astrophysics Data System (ADS)

Charee, Wisan; Tangwarodomnukun, Viboon

2018-01-01

Underwater laser milling process is a technique for minimizing the thermal damage and gaining a higher material removal rate than processing in air. This paper presents the effect of laser scan overlap on cavity width, depth and surface roughness in the laser milling of commercially-pure titanium in water. The effects of laser pulse energy and pulse repetition rate were also examined, in which a nanosecond pulse laser emitting a 1064-nm wavelength was used in this study. The experimental results indicated that a wide and deep cavity was achievable under high laser energy and large scan overlap. According to the surface roughness, the use of high pulse repetition rate together with low laser energy can promote a smooth laser-milled surface particularly at 50% scan overlap. These findings can further suggest a suitable laser micromilling condition for titanium in roughing and finishing operations.

Physical and optical limitations using ArF-excimer and Er:YAG lasers for PRK

NASA Astrophysics Data System (ADS)

Semchishen, Vladimir A.; Mrochen, Michael; Seiler, Theo

1998-06-01

The Erbium:YAG laser emitting at a wavelength of 2,94 micrometer have been promised as an alternative laser for the ArF-excimer laser (193 nm) in photorefractive keratectomy (PRK). This report discusses the limitations of laser parameters such as wavelength, energy density and pulse duration for the ablation of the cornea. In addition, the melting process during ablation on the corneal surface roughness may play a role.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

High-speed wavelength switching of tunable MEMS vertical cavity surface emitting laser by ringing suppression

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Nishimura, Shun; Nakahama, Masanori; Matsutani, Akihiro; Sakaguchi, Takahiro; Koyama, Fumio

2018-04-01

For use in wavelength division multiplexing (WDM) with high-speed wavelength routing functions, the fast wavelength switching of tunable lasers is a key function. A tunable MEMS vertical cavity surface emitting laser (VCSEL) is a good candidate as a light source for this purpose. The cantilever in MEMS VCSELs has a high mechanical resonance frequency thanks to its small size, but the switching time is limited by the ringing of the cantilever structure. In this paper, we analyzed the mechanical behavior of a cantilever MEMS mirror and demonstrated ringing-free operation with an engineered voltage signal. The applied voltage waveform was optimized in a two-step format and we experimentally obtained ringing free wavelength switching. We measured the transient response of the wavelength by inserting a tunable filter, exhibiting the settling time of less than 2.5 µs, which corresponds to a half period of the cantilever resonance frequency.

Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

NASA Astrophysics Data System (ADS)

Mizutani, Mitsuhiro; Teramae, Fumiharu; Takeuchi, Kazutaka; Murase, Tatsunori; Naritsuka, Shigeya; Maruyama, Takahiro

2006-04-01

A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Label free biosensor incorporating a replica-molded, vertically emitting distributed feedback laser

NASA Astrophysics Data System (ADS)

Lu, M.; Choi, S. S.; Wagner, C. J.; Eden, J. G.; Cunningham, B. T.

2008-06-01

A label free biosensor based upon a vertically emitting distributed feedback (DFB) laser has been demonstrated. The DFB laser comprises a replica-molded, one-dimensional dielectric grating coated with laser dye-doped polymer as the gain medium. Adsorption of biomolecules onto the laser surface alters the DFB laser emission wavelength, thereby permitting the kinetic adsorption of a protein polymer monolayer or the specific binding of small molecules to be quantified. A bulk sensitivity of 16.6nm per refractive index unit and the detection of a monolayer of the protein polymer poly(Lys, Phe) have been observed with this biosensor. The sensor represents a departure from conventional passive resonant optical sensors from the standpoint that the device actively generates its own narrowband high intensity output without stringent requirements on the coupling alignments, resulting in a simple, robust illumination and detection configuration.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Semiconductor laser joint study program with Rome Laboratory

NASA Astrophysics Data System (ADS)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

Gain Coupling VECSELs (POSTPRINT)

DTIC Science & Technology

2013-01-01

International Conference on Molecular Beam Epitaxy (MBE-XV). 10. A. Siegman , Lasers , University Sciences Books, 1986. 11. C. Hessenius, N. Terry, M...Clearance Date 28 December 2012. Report contains color. 14. ABSTRACT Vertical external cavity surface emitting lasers (VECSELs) provide a flexible...platform in order to explore curious laser designs and systems as their high-power, high-brightness make them attractive for many applications, and their

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

Surface-emitting mid-infrared quantum cascade lasers with high-contrast photonic crystal resonators.

PubMed

Xu, Gangyi; Colombelli, Raffaele; Braive, Remy; Beaudoin, Gregoire; Le Gratiet, Luc; Talneau, Anne; Ferlazzo, Laurence; Sagnes, Isabelle

2010-05-24

We have developed surface-emitting single-mode quantum cascade lasers which employ high-contrast photonic-crystal resonators. The devices operate on band-edge states of the photonic band-structure. The mode profile and polarization characteristics of the band-edge modes are calculated by three-dimensional finite-difference time-domain simulation. Experimentally, the spectral properties, the far-field patterns, and the polarization characteristics of the lasers are determined and compared with simulations. The good agreement between the simulations and the experiments confirms that the hexapolar mode at the Gamma-point band-edge gives rise to lasing. By using a novel and advanced fabrication method, deep and vertical PhC holes are fabricated with no metal redeposition on the sidewalls, which improves the laser performance with respect to the current status. The angular of the output beam is approximately 15 masculine, and the side mode suppression ratio of the single mode emission is about 25 dB. The threshold current density at 78 K and the maximum operation temperature are 7.6 kA/cm2 and 220 K, respectively. The performance is mainly limited by the loss induced by surface plasmon waveguide, which can be overcome by using an optimized dielectric waveguide structure.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V.; Dang, Cuong

The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Demonstration of enhanced side-mode suppression in metal-filled photonic crystal vertical cavity lasers.

PubMed

Griffin, Benjamin G; Arbabi, Amir; Peun Tan, Meng; Kasten, Ansas M; Choquette, Kent D; Goddard, Lynford L

2013-06-01

Previously reported simulations have suggested that depositing thin layers of metal over the surface of a single-mode, etched air hole photonic crystal (PhC) vertical-cavity surface-emitting laser (VCSEL) could potentially improve the laser's side-mode suppression ratio by introducing additional losses to the higher-order modes. This work demonstrates the concept by presenting the results of a 30 nm thin film of Cr deposited on the surface of an implant-confined PhC VCSEL. Both experimental measurements and simulation results are in agreement showing that the single-mode operation is improved at the same injection current ratio relative to threshold.

Development of GaInNAs-based 1.3-μm VCSEL

NASA Astrophysics Data System (ADS)

Ramakrishnan, Arun; Ebbinghaus, G.; Lima, A.; Supper, D.; Kristen, Guenter; Popp, M.; Degen, C.; Althaus, H.-L.; Killer, T.; Scholz, R.; Melinde, M.; Sauter, M.; Weigert, M.; Riechert, Henning; Steinle, Gunther

2003-12-01

In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

NASA Astrophysics Data System (ADS)

Popescu, C.; Dorcioman, G.; Bita, B.; Besleaga, C.; Zgura, I.; Himcinschi, C.; Popescu, A. C.

2016-12-01

Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

Blue laser diode (LD) and light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Bergh, Arpad A.

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

New picosecond laser emitting blue light for use in periodontology

NASA Astrophysics Data System (ADS)

Hennig, Thomas; Nieswand, Elmar; Rechmann, Peter

2001-04-01

Aim of the study was to investigate the impact of a new picosecond laser emitting blue light on tooth surfaces in order to remove calculus. The radiation may be comfortably transmitted via 25 micrometers diameter fiber optics. The resulting fluence at the tooth was found to be to low for ablation of calculus via nonlinear effects. Higher absorption of the 446 nm radiation by calculus compared to heathy tissues can provide preferential heating and evaporation of the calculus. The surface of thick calculus is irregular rough thus comprising a large interface to the surrounding cooling medium contra acting the preferential heating. In summary the study indicates the possibility flat layers of calculus by thermal effects. Carbonization in healthy tissues is the major problem concerning removal of subgingival calculus with thermal effects.

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in futuremore » optical systems.« less

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch

2014-04-07

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of themore » top p-GaN layer and the active region, respectively.« less

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Phase locking of stimulated emission from arrays of stripe GaAIAs/GaAs lasers using active directional couplers

NASA Astrophysics Data System (ADS)

Bazarov, A. E.; Goldobin, I. S.; Eliseev, P. G.; Kobilzhanov, O. A.; Pak, G. T.; Petrakova, T. V.; Pushkina, T. N.; Semenov, A. T.

1987-04-01

An experimental study was made of the characteristics of radiation emitted by arrays of stripe injection lasers in the form of coupled symmetric active Y couplers. An output power of 300 mW in one direction was achieved under cw emission conditions. The periodicity of lobes in the angular distribution corresponded to diffraction of radiation from phase-locked sources and the presence of a peak in the direction of the normal to the emitting surface indicated that the radiation from the individual sources was in phase. An output power of 72.5 mW was obtained in the case of single-frequency cw emission (in an external dispersive resonator).

Commercial mode-locked vertical external cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Head, C. Robin; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2017-02-01

In recent years, M Squared Lasers have successfully commercialized a range of mode-locked vertical external cavity surface emitting lasers (VECSELs) operating between 920-1050nm and producing picosecond-range pulses with average powers above 1W at pulse repetition frequencies (PRF) of 200MHz. These laser products offer a low-cost, easy-to-use and maintenance-free tool for the growing market of nonlinear microscopy. However, in order to present a credible alternative to ultrafast Ti-sapphire lasers, pulse durations below 200fs are required. In the last year, efforts have been directed to reduce the pulse duration of the Dragonfly laser system to below 200fs with a target average power above 1W at a PRF of 200MHz. This paper will describe and discuss the latest efforts undertaken to approach these targets in a laser system operating at 990nm. The relatively low PRF operation of Dragonfly lasers represents a challenging requirement for mode-locked VECSELs due to the very short upper state carrier lifetime, on the order of a few nanoseconds, which can lead to double pulsing behavior in longer cavities as the time between consecutive pulses is increased. Most notably, the design of the Dragonfly VECSEL cavity was considerably modified and the laser system extended with a nonlinear pulse stretcher and an additional compression stage. The improved Dragonfly laser system achieved pulse duration as short as 130fs with an average power of 0.85W.

Detection-gap-independent optical sensor design using divergence-beam-controlled slit lasers for wearable devices

NASA Astrophysics Data System (ADS)

Yoon, Young Zoon; Kim, Hyochul; Park, Yeonsang; Kim, Jineun; Lee, Min Kyung; Kim, Un Jeong; Roh, Young-Geun; Hwang, Sung Woo

2016-09-01

Wearable devices often employ optical sensors, such as photoplethysmography sensors, for detecting heart rates or other biochemical factors. Pulse waveforms, rather than simply detecting heartbeats, can clarify arterial conditions. However, most optical sensor designs require close skin contact to reduce power consumption while obtaining good quality signals without distortion. We have designed a detection-gap-independent optical sensor array using divergence-beam-controlled slit lasers and distributed photodiodes in a pulse-detection device wearable over the wrist's radial artery. It achieves high biosignal quality and low power consumption. The top surface of a vertical-cavity surface-emitting laser of 850 nm wavelength was covered by Au film with an open slit of width between 500 nm and 1500 nm, which generated laser emissions across a large divergence angle along an axis orthogonal to the slit direction. The sensing coverage of the slit laser diode (LD) marks a 50% improvement over nonslit LD sensor coverage. The slit LD sensor consumes 100% more input power than the nonslit LD sensor to obtain similar optical output power. The slit laser sensor showed intermediate performance between LD and light-emitting diode sensors. Thus, designing sensors with multiple-slit LD arrays can provide useful and convenient ways for incorporating optical sensors in wrist-wearable devices.

Texturing of polypropylene (PP) with nanosecond lasers

NASA Astrophysics Data System (ADS)

Riveiro, A.; Soto, R.; del Val, J.; Comesaña, R.; Boutinguiza, M.; Quintero, F.; Lusquiños, F.; Pou, J.

2016-06-01

Polypropylene (PP) is a biocompatible and biostable polymer, showing good mechanical properties that has been recently introduced in the biomedical field for bone repairing applications; however, its poor surface properties due to its low surface energy limit their use in biomedical applications. In this work, we have studied the topographical modification of polypropylene (PP) laser textured with Nd:YVO4 nanosecond lasers emitting at λ = 1064 nm, 532 nm, and 355 nm. First, optical response of this material under these laser wavelengths was determined. The application of an absorbing coating was also studied. The influence of the laser processing parameters on the surface modification of PP was investigated by means of statistically designed experiments. Processing maps to tailor the roughness, and wettability, the main parameters affecting cell adhesion characteristics of implants, were also determined. Microhardness measurements were performed to discern the impact of laser treatment on the final mechanical properties of PP.

Theory of the mode stabilization mechanism in concave-micromirror-capped vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Park, Si-Hyun; Park, Yeonsang; Jeon, Heonsu

2003-08-01

We have investigated theoretically the transverse mode stabilization mechanism in oxide-confined concave-micromirror-capped vertical-cavity surface-emitting lasers (CMC-VCSELs) as reported by Park et al. [Appl. Phys. Lett. 80, 183 (2002)]. From detailed numerical calculations on a model CMC-VCSEL structure, we found that mode discrimination factors appear to be periodic in the micromirror layer thickness with a periodicity of λ/2. We also found that there are two possible concave micromirror structures for the fundamental transverse mode laser operation. These structures can be grouped according to the thickness of the concave micromirror layer: whether it is an integer or a half-integer multiple of λ/2. The optimal micromirror curvature radius differs accordingly for each case. In an optimally designed CMC-VCSEL model structure, the fundamental transverse mode can be favored as much as 4, 8, and 13 times more strongly than the first, second, and third excited modes, respectively.

Solar thermophotovoltaic system using nanostructures.

PubMed

Ungaro, Craig; Gray, Stephen K; Gupta, Mool C

2015-09-21

This paper presents results on a highly efficient experimental solar thermophotovoltaic (STPV) system using simulated solar energy. An overall power conversion efficiency of 6.2% was recorded under solar simulation. This was matched with a thermodynamic model, and the losses within the system, as well as a path forward to mitigate these losses, have been investigated. The system consists of a planar, tungsten absorbing/emitting structure with an anti-reflection layer coated laser-microtextured absorbing surface and single-layer dielectric coated emitting surface. A GaSb PV cell was used to capture the emitted radiation and convert it into electrical energy. This simple structure is both easy to fabricate and temperature stable, and contains no moving parts or heat exchange fluids.

High-emission cold cathode

DOEpatents

Mancebo, L.

1974-01-29

A field-emission cathode having a multitude of field emission points for emitting a copious stream of electrons when subjected to a high field is described. The cathode is constructed by compressing a multitude of tungsten strips alternately arranged with molybdenum strips and copper ribbons or compressing alternately arranged copper plated tungsten and molybdenum strips, heating the arrangement to braze the tungsten and molybdenum strips together with the copper, machining and grinding the exposed strip edges of one side of the brazed arrangement to obtain a precisely planar surface, etching a portion of the molybdenum and copper to leave the edges of the tungsten strips protruding for electron emission, and subjecting the protruding edges of the tungsten strips to a high electric field to degas and roughen the surface to pnovide a large number of emitting points. The resulting structure is particularly useful as a cathode in a transversely excited gaseous laser where the cathode is mounted in a vacuum chamber for emitting electrons under the influence of a high electric field between the cathode and an extractor grid. The electrons pass through the extractor grid, a thin window in the wall of the laser chamber and into the laser chamber which is filled with a gaseous mixture of helium, nitrogen, and carbon dioxide. A second grid is mounted on the gaseous side of the window. The electrons pass into the laser chamber under the influence of a second electric field between the second grid and an anode in the laser chamber to raise selected gas atoms of the gaseous mixture to appropriately excited states so that a subsequent coherent light beam passing through the mixture transversely to the electron stream through windows in opposite ends of the laser chamber stimulates the excited atoms to amplify the beam. (Official Gazette)

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

ARPA/NRL X-Ray Laser Program - Semiannual Technical Report to Defense Advanced Research Projects Agency, 1 January 1975-30 June 1975

DTIC Science & Technology

1975-09-01

being conducted with highly- stripped carbon ions emitted fron a laser -irradiated surface and ^xpandin- into a background gas . The...obtained from reported measurement s of noble gas lasers indicate that the amplifiers will operate in I depletion mode, providing pulse powers in the...pumping appears to be the easier alternative and it will be pursued. The alternative amplifier approach involving electron beam pumped noble gas lasers

New laser surface treatments: cleaning, derusting, deoiling, depainting, deoxidizing, and degreasing

NASA Astrophysics Data System (ADS)

Daurelio, Giuseppe; Chita, Giuseppe; Cinquepalmi, Massimo

1997-08-01

Many materials as substrates and surface products have been tested. Typically ferrous (Carbon Steels and Stainless Steels) and non ferrous (Al and Cu metals and its alloys) ones have been employed. Some epoxy, polyurethane, polyester and acrylic paints in different thickness and color have been tested. Many types of the surface rust and oxide on different bulk material have been undertaken to test. Similarly some different types of oils and greases, usually used in industry against the oxidation, have been studied. Anyway many types of dirt, grit, calcareous one and so on, present on industrial components, have been laser cleaned without using solvents, acid baths and other ones. Different types of laser sources have been employed: an axial fast flow, 1.5 KW CO2 c.w. and pulsed laser source, emitting a 10.6 micrometers beam; a portable CO2 laser, c.w. (1 to 25 W) and pulsed (1 to 100 Hz and 400 ms max pulse duration) source, emitting a 10.6 micrometers beam with a multi-articulated seven mirrors guiding device and focussing head; a portable Nd-YAG laser, Q-switched and normal-mode source. 1st harmonic 1.06 micrometers (6 ns pulse duration), 2nd harmonic 532 nm (120 microsecond(s) duration pulse- 1J max per-pulse) wavelengths, multi-articulated seven mirrors beam guiding device, 20 Hz repetition rate. This lets shots with 600 mJ max energy per pulse and 100 MW peak power per-pulse with a very low beam divergence, 0.5 mrad at full angle; a transverse fast flow 2.5 kW CO2 laser.

MBE growth of VCSELs for high volume applications

NASA Astrophysics Data System (ADS)

Jäger, Roland; Riedl, Michael C.

2011-05-01

Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

A surface plasmon model for laser ablation of Ag sup + ions from a roughened Ag surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ritchie, R.H.; Manson, J.R.; Echenique, P.M.

1991-01-01

Experimental work by Shea and Compton suggests that Ag{sup +} ions emitted from a roughened Ag surface irradiated by a nanosecond or picosecond laser beam may absorb the full energy of the Ag surface plasmon. We have modeled this process under the assumption that it proceeds through an inverse bremsstrahlung-type absorption of the SP quantum by Ag{sup +} ion which also undergoes a small-impact parameter collision with another ion or atom in the vicinity of the surface. We give a quantitative estimate of the absorption probability and find reasonable agreement with the Shea-Compton results. 8 refs., 2 figs.

Using a terrestrial laser scanner to measure spatiotemporal surface moisture dynamics

NASA Astrophysics Data System (ADS)

Smit, Y.; Donker, J.; Ruessink, G.

2017-12-01

A terrestrial laser scanner (TLS) is an active remote sensing technique that utilizes the round trip time of an emitted laser beam to provide the range between the laser scanner and the backscattering object. It is routinely used for topographic mapping, forest measurements or 3D city models since it derives useful object representations by means of a dense three-dimensional (3D) point cloud. Here, we present a novel application using the returned intensity of the emitted beam to detect surface moisture with the RIEGL VZ-400. Because this TLS operates at a wavelength near a water absorption band (1550 nm), reflectance is an accurate parameter to measure surface moisture over its full range. Five days of intensive laser scanning were performed on a Dutch beach to illustrate the applicability of the TLS. Concurrent gravimetric surface moisture samples were collected to calibrate the relation between reflectance and surface moisture. Results reveal the reflectance output is a robust parameter to measure surface moisture from the thin upper layer over its full range from 0% to 25%. The obtained calibration curve of the presented TLS, describing the relationship between reflectance and surface moisture, has a root-mean-square error of 2.7% and a correlation coefficient squared of 0.85. This relation holds to about 60 m from the TLS. Within this distance the TLS typically produces O(10^6-10^7) data points, which we averaged into surface moisture maps with a 1 x 1 m resolution. This grid size largely removes small moisture disturbances induced by, for example, footprints or tire tracks, while retaining larger scale trends. Concluding, TLS (RIEGL-VZ 400) is a highly suited technique to accurately and robustly measure spatiotemporal surface moisture variations on a coastal beach with high spatial ( 1 x 1 m) and temporal ( 15-30min.) resolution.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

NASA Astrophysics Data System (ADS)

Sze, Theresa; Mahbobzadeh, A. M.; Cheng, Julian; Hersee, Stephen D.; Osinski, Marek; Brueck, Steven R. J.; Malloy, Kevin J.

1993-06-01

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

Application of erbium: YAG laser in ocular ablation.

PubMed

Tsubota, K

1990-01-01

Recent developments in lasers have provided us the possibility of laser ocular surgery. The xenon, argon, neodymium:YAG and dye lasers have been successfully used in out-patient clinics. The excimer laser has been attracting researchers' interest in the new application of laser to cornea and lens. The erbium:YAG laser emits a 2.94-microns beam that can ablate the transparent ocular tissues such as lenses and corneas. The author has applied this laser to the cornea, lens, vitreous and other ocular tissues. The erbium:YAG laser beam was directed through a 1.5-meter-long, 200-microns-diameter fiberoptic guide. The radiant energy measured about 50 mJ at the end of the probe. The laser was emitted as a 400-microsecond pulse. Freshly enucleated rabbit eyes were used in this study. Laser burns were applied to the tissue surface at various energy settings. At minimal power, the tissues were coagulated by the erbium:YAG laser application. At a power of more than 636-954 mJ/mm2, tissue began to evaporate; the tissue loss was observed under a surgical light microscope. Corneal photoablation, lens ablation, iridotomy, trabeculotomy, cutting of the vitreous and retinal ablation were easily performed. Like the excimer laser, the erbium:YAG laser is a potential tool for ocular surgery.

High-power green and blue electron-beam pumped surface-emitting lasers using dielectric and epitaxial distributed Bragg reflectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, T., E-mail: tklein@ifp.uni-bremen.de; Klembt, S.; Institut Néel, Université Grenoble Alpes and CNRS, B.P. 166, 38042 Grenoble

2015-03-21

ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue)more » is achieved, respectively.« less

Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

PubMed

Granero, Luis; Zalevsky, Zeev; Micó, Vicente

2011-04-01

We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

PubMed

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

2018-02-01

In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

Polarization mode control of long-wavelength VCSELs by intracavity patterning

DOE PAGES

Long, Christopher Michael; Mickovic, Zlatko; Dwir, Benjamin; ...

2016-04-26

Polarization mode control is enhanced in wafer-fused vertical-cavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces birefringence and dichroism, which discriminates between the two polarization states of the fundamental transverse modes. We find that the cavity modifications define the polarization angle at threshold with respect to the crystal axes, and increase the gain anisotropy and birefringence on average, leading to an increase in the polarization switching current. As a result, experimental measurements are explained using the spin-flip model of VCSEL polarization dynamics.

Light and scanning electron microscope investigations comparing calculus removal using an Er:YAG laser and a frequency-doubled alexandrite laser

NASA Astrophysics Data System (ADS)

Rechmann, Peter; Hennig, Thomas; Sadegh, Hamid M. M.; Goldin, Dan S.

1997-05-01

With respect to lasers emitting within the mid-IR spectral domain fiber applicators are being developed. Intended is the use of these lasers in periodontal therapy and their application inside the gingival pocket. Aim of the study presented here is to compare the effect of an Er:YAG laser on dental calculus with the results following irradiation with a frequency doubled Alexandrite laser. The surface of freshly extracted wisdom teeth and of extracted teeth suffering from severe periodontitis were irradiated with both laser wavelengths using a standardized application protocol. Calculus on the enamel surface, at the enamel cementum junction and on the root surface was irradiated. For light microscope investigations undecalcified histological sections were prepared after treatment. For the scanning electron microscope teeth were dried in alcohol and sputtered with gold. Investigations revealed that with both laser systems calculus can be removed. Using the frequency doubled Alexandrite laser selective removal of calculus is possible while engaging the Er:YAG laser even at lowest energies necessary for calculus removal healthy cementum is ablated without control.

Spectral and Radiometric Calibration Using Tunable Lasers

NASA Technical Reports Server (NTRS)

McCorkel, Joel (Inventor)

2017-01-01

A tunable laser system includes a tunable laser, an adjustable laser cavity for producing one or more modes of laser light emitted from the tunable laser, a first optical parametric oscillator positioned in a light path of the adjustable laser cavity, and a controller operable to simultaneously control parameters of at least the tunable laser, the first optical parametric oscillator, and the adjustable laser cavity to produce a range of wavelengths emitted from the tunable laser system. A method of operating a tunable laser system includes using a controller to simultaneously control parameters of a tunable laser, an adjustable laser cavity for producing one or more modes of laser light emitted from the tunable laser, and a first optical parametric oscillator positioned in a light path of the adjustable laser cavity, to produce a range of wavelengths emitted from the tunable laser system.

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

NASA Astrophysics Data System (ADS)

Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

2018-03-01

We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

NASA Astrophysics Data System (ADS)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

Amplification of pressure waves in laser-assisted endodontics with synchronized delivery of Er:YAG laser pulses.

PubMed

Lukač, Nejc; Jezeršek, Matija

2018-05-01

When attempting to clean surfaces of dental root canals with laser-induced cavitation bubbles, the resulting cavitation oscillations are significantly prolonged due to friction on the cavity walls and other factors. Consequently, the collapses are less intense and the shock waves that are usually emitted following a bubble's collapse are diminished or not present at all. A new technique of synchronized laser-pulse delivery intended to enhance the emission of shock waves from collapsed bubbles in fluid-filled endodontic canals is reported. A laser beam deflection probe, a high-speed camera, and shadow photography were used to characterize the induced photoacoustic phenomena during synchronized delivery of Er:YAG laser pulses in a confined volume of water. A shock wave enhancing technique was employed which consists of delivering a second laser pulse at a delay with regard to the first cavitation bubble-forming laser pulse. Influence of the delay between the first and second laser pulses on the generation of pressure and shock waves during the first bubble's collapse was measured for different laser pulse energies and cavity volumes. Results show that the optimal delay between the two laser pulses is strongly correlated with the cavitation bubble's oscillation period. Under optimal synchronization conditions, the growth of the second cavitation bubble was observed to accelerate the collapse of the first cavitation bubble, leading to a violent collapse, during which shock waves are emitted. Additionally, shock waves created by the accelerated collapse of the primary cavitation bubble and as well of the accompanying smaller secondary bubbles near the cavity walls were observed. The reported phenomena may have applications in improved laser cleaning of surfaces during laser-assisted dental root canal treatments.

Infrared emitting device and method

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

1997-01-01

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Ultrafast Laser Beam Switching and Pulse Train Generation by Using Coupled Vertical-Cavity, Surface-Emitting Lasers (VCSELS)

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor); Ning, Cun-Zheng (Inventor)

2005-01-01

Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

NASA Astrophysics Data System (ADS)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Ultrafast Beam Switching Using Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The strategy is demonstrated by numerical simulation, showing a beam switching of 10 deg at 42 GHz.

High power high repetition rate VCSEL array side-pumped pulsed blue laser

NASA Astrophysics Data System (ADS)

van Leeuwen, Robert; Zhao, Pu; Chen, Tong; Xu, Bing; Watkins, Laurence; Seurin, Jean-Francois; Xu, Guoyang; Miglo, Alexander; Wang, Qing; Ghosh, Chuni

2013-03-01

High power, kW-class, 808 nm pump modules based on the vertical-cavity surface-emitting laser (VCSEL) technology were developed for side-pumping of solid-state lasers. Two 1.2 kW VCSEL pump modules were implemented in a dual side-pumped Q-switched Nd:YAG laser operating at 946 nm. The laser output was frequency doubled in a BBO crystal to produce pulsed blue light. With 125 μs pump pulses at a 300 Hz repetition rate 6.1 W QCW 946 nm laser power was produced. The laser power was limited by thermal lensing in the Nd:YAG rod.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Solar thermophotovoltaic system using nanostructures

DOE PAGES

Ungaro, Craig; Gray, Stephen K.; Gupta, Mool C.

2015-08-20

This paper presents results on a highly efficient experimental solar thermophotovoltaic (STPV) system using simulated solar energy. An overall power conversion efficiency of 6.2% was recorded under solar simulation. This was matched with a thermodynamic model, and the losses within the system, as well as a path forward to mitigate these losses, have been investigated. The system consists of a planar, tungsten absorbing/emitting structure with an anti-reflection layer coated laser-microtextured absorbing surface and single-layer dielectric coated emitting surface. A GaSb PV cell was used to capture the emitted radiation and convert it into electrical energy. This simple structure is bothmore » easy to fabricate and temperature stable, and contains no moving parts or heat exchange fluids.« less

High-speed non-contact measuring apparatus for gauging the thickness of moving sheet material

DOEpatents

Grann, Eric B.; Holcomb, David E.

2000-01-01

An optical measurement apparatus is provided for measuring the thickness of a moving sheet material (18). The apparatus has a pair of optical measurement systems (21, 31) attached to opposing surfaces (14, 16) of a rigid support structure (10). A pair of high-power laser diodes (20,30) and a pair of photodetector arrays (22,32) are attached to the opposing surfaces. Light emitted from the laser diodes is reflected off of the sheet material surfaces (17, 19) and received by the respective photodetector arrays. An associated method for implementing the apparatus is also provided.

Simulation of laser beam reflection at the sea surface

NASA Astrophysics Data System (ADS)

Schwenger, Frédéric; Repasi, Endre

2011-05-01

A 3D simulation of the reflection of a Gaussian shaped laser beam on the dynamic sea surface is presented. The simulation is suitable for both the calculation of images of SWIR (short wave infrared) imaging sensor and for determination of total detected power of reflected laser light for a bistatic configuration of laser source and receiver at different atmospheric conditions. Our computer simulation comprises the 3D simulation of a maritime scene (open sea/clear sky) and the simulation of laser light reflected at the sea surface. The basic sea surface geometry is modeled by a composition of smooth wind driven gravity waves. The propagation model for water waves is applied for sea surface animation. To predict the view of a camera in the spectral band SWIR the sea surface radiance must be calculated. This is done by considering the emitted sea surface radiance and the reflected sky radiance, calculated by MODTRAN. Additionally, the radiances of laser light specularly reflected at the wind-roughened sea surface are modeled in the SWIR band considering an analytical statistical sea surface BRDF (bidirectional reflectance distribution function). This BRDF model considers the statistical slope statistics of waves and accounts for slope-shadowing of waves that especially occurs at flat incident angles of the laser beam and near horizontal detection angles of reflected irradiance at rough seas. Simulation results are presented showing the variation of the detected laser power dependent on the geometric configuration of laser, sensor and wind characteristics.

Integrated bio-fluorescence sensor.

PubMed

Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S

2003-09-26

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

VCSEL Applications and Simulation

NASA Technical Reports Server (NTRS)

Cheung, Samson; Goorjian, Peter; Ning, Cun-Zheng; Li, Jian-Zhong

2000-01-01

This viewgraph presentation gives an overview of Vertical Cavity Surface Emitting Laser (VCSEL) simulation and its applications. Details are given on the optical interconnection in information technology of VCSEL, the formulation of the simulation, its numeric algorithm, and the computational results.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

NASA Astrophysics Data System (ADS)

Choi, Woo June; Wang, Ruikang K.

2015-10-01

We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

Traveling wave electrode design of electro-optically modulated coupled-cavity surface-emitting lasers.

PubMed

Zujewski, Mateusz; Thienpont, Hugo; Panajotov, Krassimir

2012-11-19

We present a novel design of an electro-optically modulated coupled-cavity vertical-cavity surface-emitting laser (CC-VCSEL) with traveling wave electrodes of the modulator cavity, which allows to overcome the RC time constant of a traditional lumped electrode structures. The CC-VCSEL optical design is based on longitudinal mode switching which has recently experimentally demonstrated a record modulation speed. We carry out segmented transmission line electrical design of the modulator cavity in order to compensate for the low impedance of the modulator section and to match the 50 Ω electrical network. We have optimized two types of highly efficient modulator structures reaching -3 dB electrical cut-off frequency of f(cut-off) = 330 GHz with maximum reflection of -22 dB in the range from f(LF) = 100 MHz to f(cut-off) and 77 - 89% modulation efficiency.

Photonic crystal surface-emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chua, Song Liang; Lu, Ling; Soljacic, Marin

2015-06-23

A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-planemore » feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.« less

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Vertical-cavity surface-emitting lasers: the applications

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.; Liu, Yue; Bristow, Julian P. G.

1997-05-01

In this paper, we focus on how vertical-cavity surface- emitting lasers (VCSELs) and arrays have led to many feasible advanced technological applications. Their intrinsic characteristics, performance, and producibility offer substantial advantages over alternative sources. Demonstrated performance of `commercial-grade' VCSELs include low operating powers (< 2 V, mAs), high speeds (3 dB BWs > 15 GHz), and high temperature operating ranges (10 K to 400 K and -55 degree(s)C to 125 degree(s)C, and T > 200 degree(s)C). Moreover, their robustness is manifest by high reliability in excess of 107 hours mean time between failures at room temperature and tenfold improvement over existing rad-hard LEDs. Hence, even these `commercial-grade' VCSELs offer potential within cryogenic and avionics/military or space environments. We have also demonstrated submilliamp ITH, stable, single-mode VCSELs utilized within bias-free 1-Gbit/s data links. These low- power VCSELs may also serve in applications from printers to low-cost atomic clocks. The greatest near-term VCSEL applications are upgrades to low-cost LEDs and high-grade copper wire in data links and sensors. Exploiting their surface-emitting geometry, VCSELs are also compatible with established multichip module packaging. Hence VCSELs and VCSEL arrays are ideal components for interconnect-intensive processing applications between and within computing systems.

Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin

2011-09-01

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth:more » (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.« less

Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

NASA Astrophysics Data System (ADS)

O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

2017-02-01

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Phase noise analysis of a 10-GHz optical injection-locked vertical-cavity surface-emitting laser-based optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Coronel, Juan; Varón, Margarita; Rissons, Angélique

2016-09-01

The optical injection locking (OIL) technique is proposed to reduce the phase noise of a carrier generated for a vertical-cavity surface-emitting laser (VCSEL)-based optoelectronic oscillator. The OIL technique permits the enhancement of the VCSEL direct modulation bandwidth as well as the stabilization of the optical noise of the laser. A 2-km delay line, 10-GHz optical injection-locked VCSEL-based optoelectronic oscillator (OILVBO) was implemented. The internal noise sources of the optoelectronic oscillator components were characterized and analyzed to understand the noise conversion of the system into phase noise in the oscillator carrier. The implemented OILVBO phase noise was -105.7 dBc/Hz at 10 kHz from the carrier; this value agrees well with the performed simulated analysis. From the computed and measured phase noise curves, it is possible to infer the noise processes that take place inside the OILVBO. As a second measurement of the oscillation quality, a time-domain analysis was done through the Allan's standard deviation measurement, reported for first time for an optoelectronic oscillator using the OIL technique.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Molecular beam epitaxy of lead salt-based vertical cavity surface emitting lasers for the 4-6 μm spectral region

NASA Astrophysics Data System (ADS)

Springholz, G.; Schwarzl, T.; Heiß, W.; Aigle, M.; Pascher, H.

2001-07-01

IV-VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4-6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1- xEu xTe as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1- xEu xTe layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1- xEu xTe ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.

An accurate laser radiometer for determining visible exposure times.

PubMed

Royston, D D

1985-01-01

A laser light radiometer has been developed for the Electro-Optics Branch of the Center for Devices and Radiological Health (CDRH). The radiometer measures direct laser radiation emitted in the visible spectrum. Based upon this measurement, the instrument's microprocessor automatically determines at what time duration the exposure to the measured laser radiation would exceed either the class I accessible emission limits of the Federal Performance Standard for laser products or the maximum permissible exposure limits of laser user safety standards. The instrument also features automatic background level compensation, pulse measurement capability, and self-diagnosis. Measurement of forward surface illumination levels preceding HpD photoradiation therapy is possible.

Laser-photofield emission from needle cathodes for low-emittance electron beams.

PubMed

Ganter, R; Bakker, R; Gough, C; Leemann, S C; Paraliev, M; Pedrozzi, M; Le Pimpec, F; Schlott, V; Rivkin, L; Wrulich, A

2008-02-15

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.

Self-Sustained Ultrafast Pulsation in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng

2001-01-01

High frequency, narrow-band self-pulsating operation is demonstrated in two coupled vertical-cavity surface-emitting lasers (VCSELs). The coupled VCSELs provide an ideal source for high-repetition rate (over 40 GHz), sinusoidal-like modulated laser source with Gaussian-like near- and far-field profiles. We also show that the frequency of the modulation can be tuned by the inter-VCSEL separation or by DC-bias level.

Wavelength shift in vertical cavity laser arrays on a patterned substrate

NASA Astrophysics Data System (ADS)

Eng, L. E.; Bacher, K.; Yuen, W.; Larson, M.; Ding, G.; Harris, J. S., Jr.; Chang-Hasnain, C. J.

1995-03-01

The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al(0.2)Ga(0.8)As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array.

Vertical cavity surface emitting lasers based on InP and related compounds -- Bottleneck and corkscrew

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iga, K.

1996-12-31

Vertical optical interconnects of LSI chips and circuit boards and multiple fiber systems may be the most interesting field related to SE lasers. From this point of view, the device should be small as possible. The future process technology for it including epitaxy and etching will drastically change the situation of SE lasers. Dome optical technologies are already introduced in various subsystems, but the arrayed microoptic technology would be very helpful for advanced systems.

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Slight, T.; Meredith, W.; Gordeev, N. Y.; Nadtochy, A. M.; Payusov, A. S.; Maximov, M. V.; Blokhin, S. A.; Blokhin, A. A.; Zadiranov, Yu. M.; Maleev, N. A.; Ustinov, V. M.; Choquette, K. D.

2016-03-01

A concept of passive cavity surface-emitting laser is proposed aimed to control the temperature shift of the lasing wavelength. The device contains an all-semiconductor bottom distributed Bragg reflector (DBR), in which the active medium is placed, a dielectric resonant cavity and a dielectric top DBR, wherein at least one of the dielectric materials has a negative temperature coefficient of the refractive index, dn/dT < 0. This is shown to be the case for commonly used dielectric systems SiO2/TiO2 and SiO2/Ta2O5. Two SiO2/TiO2 resonant structures having a cavity either of SiO2 or TiO2 were deposited on a substrate, their optical power reflectance spectra were measured at various temperatures, and refractive index temperature coefficients were extracted, dn/dT = 0.0021 K-1 for SiO2 and dn/dT = -0.0092 K-1 for TiO2. Using such dielectric materials allows designing passive cavity surface-emitting lasers having on purpose either positive, or zero, or negative temperature shift of the lasing wavelength dλ/dT. A design for temperature-insensitive lasing wavelength (dλ/dT = 0) is proposed. Employing devices with temperature-insensitive lasing wavelength in wavelength division multiplexing systems may allow significant reducing of the spectral separation between transmission channels and an increase in number of channels for a defined spectral interval enabling low cost energy efficient uncooled devices.

Laser remote sensing of backscattered light from a target sample

DOEpatents

Sweatt, William C [Albuquerque, NM; Williams, John D [Albuquerque, NM

2008-02-26

A laser remote sensing apparatus comprises a laser to provide collimated excitation light at a wavelength; a sensing optic, comprising at least one optical element having a front receiving surface to focus the received excitation light onto a back surface comprising a target sample and wherein the target sample emits a return light signal that is recollimated by the front receiving surface; a telescope for collecting the recollimated return light signal from the sensing optic; and a detector for detecting and spectrally resolving the return light signal. The back surface further can comprise a substrate that absorbs the target sample from an environment. For example the substrate can be a SERS substrate comprising a roughened metal surface. The return light signal can be a surface-enhanced Raman signal or laser-induced fluorescence signal. For fluorescence applications, the return signal can be enhanced by about 10.sup.5, solely due to recollimation of the fluorescence return signal. For SERS applications, the return signal can be enhanced by 10.sup.9 or more, due both to recollimation and to structuring of the SERS substrate so that the incident laser and Raman scattered fields are in resonance with the surface plasmons of the SERS substrate.

Long-wavelength VCSELs: Power-efficient answer

NASA Astrophysics Data System (ADS)

Kapon, Eli; Sirbu, Alexei

2009-01-01

The commercialization of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) is gaining new momentum as the telecoms market shifts from long-haul applications to local and access networks. These small, power-efficient devices offer several advantages over traditional edge-emitters.

Laser Infrared Desorption Spectroscopy to Detect Complex Organic Molecules on Icy Planetary Surfaces

NASA Technical Reports Server (NTRS)

Sollit, Luke S.; Beegle, Luther W.

2008-01-01

Laser Desorption-Infrared Spectroscopy (LD-IR) uses an IR laser pulse to desorb surface materials while a spectrometer measures the emission spectrum of the desorbed materials (Figure 1). In this example, laser desorption operates by having the incident laser energy absorbed by near surface material (10 microns in depth). This desorption produces a plume that exists in an excited state at elevated temperatures. A natural analog for this phenomenon can be observed when comets approach the sun and become active and individual molecular emission spectra can be observed in the IR [1,2,3,4,5]. When this occurs in comets, the same species that initially emit radiation down to the ground state are free to absorb it, reducing the amount of detectable emission features. The nature of our technique results in absorption not occurring, because the laser pulse could easily be moved away form the initial desorption plume, and still have better spatial resolution then reflectance spectroscopy. In reflectance spectroscopy, trace components have a relatively weak signal when compared to the entire active nature of the surface. With LDIR, the emission spectrum is used to identify and analyze surface materials.

System and method for laser assisted sample transfer to solution for chemical analysis

DOEpatents

Van Berkel, Gary J; Kertesz, Vilmos

2014-01-28

A system and method for laser desorption of an analyte from a specimen and capturing of the analyte in a suspended solvent to form a testing solution are described. The method can include providing a specimen supported by a desorption region of a specimen stage and desorbing an analyte from a target site of the specimen with a laser beam centered at a radiation wavelength (.lamda.). The desorption region is transparent to the radiation wavelength (.lamda.) and the sampling probe and a laser source emitting the laser beam are on opposite sides of a primary surface of the specimen stage. The system can also be arranged where the laser source and the sampling probe are on the same side of a primary surface of the specimen stage. The testing solution can then be analyzed using an analytical instrument or undergo further processing.

Rapid laser fabrication of microlens array using colorless liquid photopolymer for AMOLED devices

NASA Astrophysics Data System (ADS)

Kim, Kwang-Ryul; Jeong, Han-Wook; Lee, Kong-Soo; Yi, Junsin; Yoo, Jae-Chern; Cho, Myung-Woo; Cho, Sung-Hak; Choi, Byoungdeog

2011-01-01

Microlens array (MLA) is microfabricated using Ultra Violet (UV) laser for display device applications. A colorless liquid photopolymer, Norland Optical Adhesive (NOA) 60, is spin-coated and pre-cured via UV light for completing the laser process. The laser energy controlled by a galvano scanner is radiated on the surface of the NOA 60. A rapid thermal volume expansion inside the material creates microlens array when the Gaussian laser energy is absorbed. The fabrication process conditions for various shapes and densities of MLA using a non-contact surface profiler are investigated. Furthermore, we analyze the optical and display characteristics for the Organic Light Emitting Diode (OLED) devices. Optimized condition furnishes the OLED with the enhancement of light emission by 15%. We show that UV laser technique, which is installed with NOA 60 MLA layer, is eligible for improving the performance of the next generation display devices.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

DOE PAGES

Li, S.; Alverson, S.; Bohler, D.; ...

2017-08-17

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency.more » Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.« less

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, S.; Alverson, S.; Bohler, D.

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency.more » Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.« less

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

NASA Astrophysics Data System (ADS)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.; Gilevich, S.; Huang, Z.; Miahnahri, A.; Ratner, D.; Robinson, J.; Zhou, F.

2017-08-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μ m . Our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Terahertz generation from laser-driven ultrafast current propagation along a wire target

NASA Astrophysics Data System (ADS)

Zhuo, H. B.; Zhang, S. J.; Li, X. H.; Zhou, H. Y.; Li, X. Z.; Zou, D. B.; Yu, M. Y.; Wu, H. C.; Sheng, Z. M.; Zhou, C. T.

2017-01-01

Generation of intense coherent THz radiation by obliquely incidenting an intense laser pulse on a wire target is studied using particle-in-cell simulation. The laser-accelerated fast electrons are confined and guided along the surface of the wire, which then acts like a current-carrying line antenna and under appropriate conditions can emit electromagnetic radiation in the THz regime. For a driving laser intensity ˜3 ×1018W /cm2 and pulse duration ˜10 fs, a transient current above 10 KA is produced on the wire surface. The emission-cone angle of the resulting ˜0.15 mJ (˜58 GV/m peak electric field) THz radiation is ˜30∘ . The conversion efficiency of laser-to-THz energy is ˜0.75 % . A simple analytical model that well reproduces the simulated result is presented.

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sigler, C.; Kirch, J. D.; Mawst, L. J.

2014-03-31

Resonant coupling of the transverse-magnetic polarized (guided) optical mode of a quantum-cascade laser (QCL) to the antisymmetric surface-plasmon modes of 2nd-order distributed-feedback (DFB) metal/semiconductor gratings results in strong antisymmetric-mode absorption. In turn, lasing in the symmetric mode, that is, surface emission in a single-lobe far-field beam pattern, is strongly favored over controllable ranges in grating duty cycle and tooth height. By using core-region characteristics of a published 4.6 μm-emitting QCL, grating-coupled surface-emitting (SE) QCLs are analyzed and optimized for highly efficient single-lobe operation. For infinite-length devices, it is found that when the antisymmetric mode is resonantly absorbed, the symmetric mode hasmore » negligible absorption loss (∼0.1 cm{sup −1}) while still being efficiently outcoupled, through the substrate, by the DFB grating. For finite-length devices, 2nd-order distributed Bragg reflector (DBR) gratings are used on both sides of the DFB grating to prevent uncontrolled reflections from cleaved facets. Equations for the threshold-current density and the differential quantum efficiency of SE DFB/DBR QCLs are derived. For 7 mm-long, 8.0 μm-wide, 4.6 μm-emitting devices, with an Ag/InP grating of ∼39% duty cycle, and ∼0.22 μm tooth height, threshold currents as low as 0.45 A are projected. Based on experimentally obtained internal efficiency values from high-performance QCLs, slope efficiencies as high as 3.4 W/A are projected; thus, offering a solution for watt-range, single-lobe CW operation from SE, mid-infrared QCLs.« less

An in Situ Technique for Elemental Analysis of Lunar Surfaces

NASA Technical Reports Server (NTRS)

Kane, K. Y.; Cremers, D. A.

1992-01-01

An in situ analytical technique that can remotely determine the elemental constituents of solids has been demonstrated. Laser-Induced Breakdown Spectroscopy (LIBS) is a form of atomic emission spectroscopy in which a powerful laser pulse is focused on a solid to generate a laser spark, or microplasma. Material in the plasma is vaporized, and the resulting atoms are excited to emit light. The light is spectrally resolved to identify the emitting species. LIBS is a simple technique that can be automated for inclusion aboard a remotely operated vehicle. Since only optical access to a sample is required, areas inaccessible to a rover can be analyzed remotely. A single laser spark both vaporizes and excites the sample so that near real-time analysis (a few minutes) is possible. This technique provides simultaneous multielement detection and has good sensitivity for many elements. LIBS also eliminates the need for sample retrieval and preparation preventing possible sample contamination. These qualities make the LIBS technique uniquely suited for use in the lunar environment.

Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

PubMed

Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

2014-10-28

Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

Experimental investigation of transient temperature characteristic in high power fiber laser cutting of a thick steel plate

NASA Astrophysics Data System (ADS)

Phi Long, Nguyen; Matsunaga, Yukihiro; Hanari, Toshihide; Yamada, Tomonori; Muramatsu, Toshiharu

2016-10-01

Experiment of temperature measurement was performed to investigate the transient temperature characteristics of molten metal during laser cutting. The aim of this study was to establish a method for measuring the surface temperature variation near the molten pool correlated with changes in cutting parameters. The relationship between temperature inside the kerf cut and characteristic of the cut surface was investigated by using thermography and thermocouples. Results show strong correlations between the transient temperatures and the thermal image for different cutting conditions. In addition, two-color thermometer has been used to obtain radiation intensity emitted from the irradiating zone as a function of operating conditions. Experiments have shown that one can detect the cutting quality by characterization of the surface temperature during laser cutting process.

Real-time monitoring of laser welding of galvanized high strength steel in lap joint configuration

NASA Astrophysics Data System (ADS)

Kong, Fanrong; Ma, Junjie; Carlson, Blair; Kovacevic, Radovan

2012-10-01

Two different cases regarding the zinc coating at the lap joint faying surface are selected for studying the influence of zinc vapor on the keyhole dynamics of the weld pool and the final welding quality. One case has the zinc coating fully removed at the faying surface; while the other case retains the zinc coating on the faying surface. It is found that removal of the zinc coating at the faying surface produces a significantly better weld quality as exemplified by a lack of spatters whereas intense spatters are present when the zinc coating is present at the faying surface. Spectroscopy is used to detect the optical spectra emitted from a laser generated plasma plume during the laser welding of galvanized high strength DP980 steel in a lap-joint configuration. A correlation between the electron temperature and defects within the weld bead is identified by using the Boltzmann plot method. The laser weld pool keyhole dynamic behavior affected by a high-pressure zinc vapor generated at the faying surface of galvanized steel lap-joint is monitored in real-time by a high speed charge-coupled device (CCD) camera assisted with a green laser as an illumination source.

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.

2014-06-09

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasingmore » is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.« less

Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication

NASA Astrophysics Data System (ADS)

Tansu, Nelson

The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions. The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail.

Thermal effects from modified endodontic laser tips used in the apical third of root canals with erbium-doped yttrium aluminium garnet and erbium, chromium-doped yttrium scandium gallium garnet lasers.

PubMed

George, Roy; Walsh, Laurence J

2010-04-01

To evaluate the temperature changes occurring on the apical third of root surfaces when erbium-doped yttrium aluminium garnet (Er:YAG) and erbium, chromium-doped yttrium scandium gallium garnet (Er,Cr:YSGG) laser energy was delivered with a tube etched, laterally emitting conical tip and a conventional bare design optical fiber tip. Thermal effects of root canal laser treatments on periodontal ligament cells and alveolar bone are of concern in terms of safety. A total of 64 single-rooted extracted teeth were prepared 1 mm short of the working length using rotary nickel-titanium Pro-Taper files to an apical size corresponding to a F5 Pro-Taper instrument. A thermocouple located 2 mm from the apex was used to record temperature changes arising from delivery of laser energy through laterally emitting conical tips or plain tips, using an Er:YAG or Er,Cr:YSGG laser. For the Er:YAG and Er,Cr:YSGG systems, conical fibers showed greater lateral emissions (452 + 69% and 443 + 64%) and corresponding lower forward emissions (48 + 5% and 49 + 5%) than conventional plain-fiber tips. All four combinations of laser system and fiber design elicited temperature increases less than 2.5 degrees C during lasing. The use of water irrigation attenuated completely the thermal effects of individual lasing cycles. Laterally emitting conical fiber tips can be used safely under defined conditions for intracanal irradiation without harmful thermal effects on the periodontal apparatus.

A Semiconductor Microlaser for Intracavity Flow Cytometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhil, O.; Copeland, G.C.; Dunne, J.L.

1999-01-20

Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

Bright new world

NASA Astrophysics Data System (ADS)

Kroó, Norbert; Rácz, Péter; Varró, Sándor

2016-02-01

Surface plasmons (SPOs) have been excited by intense femtosecond laser pulses on a gold film at room temperature and their near field has been analyzed by the intensity dependent response of an STM and by studying the spectra of multiplasmon emitted electrons. Around 80 GW/cm2 laser intensity, anomalies have been found in both cases, interpreted as the stepping in of electron pairing, transition to a diamagnetic state, and by anomalous Faraday rotation.

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, C.; Sigler, C.; Kirch, J. D.

2016-03-21

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical modemore » to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the device's cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.« less

VCSEL end-pumped passively Q-switched Nd:YAG laser with adjustable pulse energy.

PubMed

Goldberg, Lew; McIntosh, Chris; Cole, Brian

2011-02-28

A compact, passively Q-switched Nd:YAG laser utilizing a Cr4+:YAG saturable absorber, is end-pumped by the focused emission from an 804 nm vertical-cavity surface-emitting laser (VCSEL) array. By changing the VCSEL operating current, we demonstrated 2x adjustability in the laser output pulse energy, from 9 mJ to 18 mJ. This energy variation was attributed to changes in the angular distribution of VCSEL emission with drive current, resulting in a change in the pump intensity distribution generated by a pump-light-focusing lens.

Near-ultraviolet laser diodes for brilliant ultraviolet fluorophore excitation.

PubMed

Telford, William G

2015-12-01

Although multiple lasers are now standard equipment on most modern flow cytometers, ultraviolet (UV) lasers (325-365 nm) remain an uncommon excitation source for cytometry. Nd:YVO4 frequency-tripled diode pumped solid-state lasers emitting at 355 nm are now the primary means of providing UV excitation on multilaser flow cytometers. Although a number of UV excited fluorochromes are available for flow cytometry, the cost of solid-state UV lasers remains prohibitively high, limiting their use to all but the most sophisticated multilaser instruments. The recent introduction of the brilliant ultraviolet (BUV) series of fluorochromes for cell surface marker detection and their importance in increasing the number of simultaneous parameters for high-dimensional analysis has increased the urgency of including UV sources in cytometer designs; however, these lasers remain expensive. Near-UV laser diodes (NUVLDs), a direct diode laser source emitting in the 370-380 nm range, have been previously validated for flow cytometric analysis of most UV-excited probes, including quantum nanocrystals, the Hoechst dyes, and 4',6-diamidino-2-phenylindole. However, they remain a little-used laser source for cytometry, despite their significantly lower cost. In this study, the ability of NUVLDs to excite the BUV dyes was assessed, along with their compatibility with simultaneous brilliant violet (BV) labeling. A NUVLD emitting at 375 nm was found to excite most of the available BUV dyes at least as well as a UV 355 nm source. This slightly longer wavelength did produce some unwanted excitation of BV dyes, but at sufficiently low levels to require minimal additional compensation. NUVLDs are compact, relatively inexpensive lasers that have higher power levels than the newest generation of small 355 nm lasers. They can, therefore, make a useful, cost-effective substitute for traditional UV lasers in multicolor analysis involving the BUV and BV dyes. Published 2015 Wiley Periodicals Inc. on behalf of ISAC.

Nanofabrication with Pulsed Lasers

PubMed Central

2010-01-01

An overview of pulsed laser-assisted methods for nanofabrication, which are currently developed in our Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by laser–matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of direct laser ablation or laser plasma-assisted treatment of semiconductors to form light-absorbing and light-emitting nano-architectures, as well as periodic nanoarrays, or laser-assisted production of nanoclusters and their controlled growth in gaseous or liquid medium to form nanostructured films or colloidal nanoparticles. Nanomaterials synthesized by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of importance for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics. PMID:20672069

Terahertz generation from laser-driven ultrafast current propagation along a wire target.

PubMed

Zhuo, H B; Zhang, S J; Li, X H; Zhou, H Y; Li, X Z; Zou, D B; Yu, M Y; Wu, H C; Sheng, Z M; Zhou, C T

2017-01-01

Generation of intense coherent THz radiation by obliquely incidenting an intense laser pulse on a wire target is studied using particle-in-cell simulation. The laser-accelerated fast electrons are confined and guided along the surface of the wire, which then acts like a current-carrying line antenna and under appropriate conditions can emit electromagnetic radiation in the THz regime. For a driving laser intensity ∼3×10^{18}W/cm^{2} and pulse duration ∼10 fs, a transient current above 10 KA is produced on the wire surface. The emission-cone angle of the resulting ∼0.15 mJ (∼58 GV/m peak electric field) THz radiation is ∼30^{∘}. The conversion efficiency of laser-to-THz energy is ∼0.75%. A simple analytical model that well reproduces the simulated result is presented.

A nanoscale vacuum-tube diode triggered by few-cycle laser pulses

NASA Astrophysics Data System (ADS)

Higuchi, Takuya; Maisenbacher, Lothar; Liehl, Andreas; Dombi, Péter; Hommelhoff, Peter

2015-02-01

We propose and demonstrate a nanoscale vacuum-tube diode triggered by few-cycle near-infrared laser pulses. It represents an ultrafast electronic device based on light fields, exploiting near-field optical enhancement at surfaces of two metal nanotips. The sharper of the two tips displays a stronger field-enhancement, resulting in larger photoemission yields at its surface. One laser pulse with a peak intensity of 4.7 × 1011 W/cm2 triggers photoemission of ˜16 electrons from the sharper cathode tip, while emission from the blunter anode tip is suppressed by 19 dB to ˜0.2 electrons per pulse. Thus, the laser-triggered current between two tips exhibit a rectifying behavior, in analogy to classical vacuum-tube diodes. According to the kinetic energy of the emitted electrons and the distance between the tips, the total operation time of this laser-triggered nanoscale diode is estimated to be below 1 ps.

Multicolor photonic crystal laser array

DOEpatents

Wright, Jeremy B; Brener, Igal; Subramania, Ganapathi S; Wang, George T; Li, Qiming

2015-04-28

A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Carbon nanotube mode-locked vertical external-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Seger, K.; Meiser, N.; Choi, S. Y.; Jung, B. H.; Yeom, D.-I.; Rotermund, F.; Okhotnikov, O.; Laurell, F.; Pasiskevicius, V.

2014-03-01

Mode-locking an optically pumped semiconductor disk laser has been demonstrated using low-loss saturable absorption containing a mixture of single-walled carbon nanotubes in PMM polymer. The modulator was fabricated by a simple spin-coating technique on fused silica substrate and was operating in transmission. Stable passive fundamental modelocking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm.

Surface-enhanced hyper-Raman spectroscopy with a picosecond laser: gold and copper colloids

NASA Astrophysics Data System (ADS)

Lipscomb, Leigh Ann; Nie, Shuming; Feng, Sibo; Yu, Nai-Teng

1990-07-01

We have obtained surface-enhanced hyper-Raman scattering (SEHRS) spectra of crystal violet, rhodamine 6G and Ru(trpy) (BPE) 32+ adsorbed on gold and copper colloidal surfaces (where trpy=2,2',2″-terpyridine, BPE=trans-bis(4-pyridyl)ethylene). Our results demonstrate that the SEHRS effect is not intrinsically restricted to a Ag substrate and that surface enhancements at the emitted hyper-Raman photon frequencies are not required for observing SEHRS signals.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1.31mum: 1.46mum. These techniques offer the promise of inexpensive, high speed fiber networking.

Experimental phase-space-based optical amplification of scar modes.

PubMed

Michel, C; Tascu, S; Doya, V; Aschiéri, P; Blanc, W; Legrand, O; Mortessagne, F

2012-04-01

Wave billiards which are chaotic in the geometrical limit are known to support nongeneric spatially localized modes called scar modes. The interaction of the scar modes with gain has been recently investigated in optics in microcavity lasers and vertical-cavity surface-emitting lasers. Exploiting the localization properties of scar modes in their wave-analogous phase-space representation, we report experimental results of scar mode selection by gain in a doped D-shaped optical fiber.

Mobile laser scanning applied to the earth sciences

USGS Publications Warehouse

Brooks, Benjamin A.; Glennie, Craig; Hudnut, Kenneth W.; Ericksen, Todd; Hauser, Darren

2013-01-01

Lidar (light detection and ranging), a method by which the precise time of flight of emitted pulses of laser energy is measured and converted to distance for reflective targets, has helped scientists make topographic maps of Earth's surface at scales as fine as centimeters. These maps have allowed the discovery and analysis of myriad otherwise unstudied features, such as fault scarps, river channels, and even ancient ruins [Glennie et al., 2013b].

In vitro performance of DIAGNOdent laser fluorescence device for dental calculus detection on human tooth root surfaces.

PubMed

Rams, Thomas E; Alwaqyan, Abdulaziz Y

2017-10-01

This study assessed the reproducibility of a red diode laser device, and its capability to detect dental calculus in vitro on human tooth root surfaces. On each of 50 extracted teeth, a calculus-positive and calculus-free root surface was evaluated by two independent examiners with a low-power indium gallium arsenide phosphide diode laser (DIAGNOdent) fitted with a periodontal probe-like sapphire tip and emitting visible red light at 655 nm wavelength. Laser autofluorescence intensity readings of examined root surfaces were scored on a 0-99 scale, with duplicate assessments performed using the laser probe tip directed both perpendicular and parallel to evaluated tooth root surfaces. Pearson correlation coefficients of untransformed measurements, and kappa analysis of data dichotomized with a >40 autofluorescence intensity threshold, were calculated to assess intra- and inter-examiner reproducibility of the laser device. Mean autofluorescence intensity scores of calculus-positive and calculus-free root surfaces were evaluated with the Student's t -test. Excellent intra- and inter-examiner reproducibility was found for DIAGNOdent laser autofluorescence intensity measurements, with Pearson correlation coefficients above 94%, and kappa values ranging between 0.96 and 1.0, for duplicate readings taken with both laser probe tip orientations. Significantly higher autofluorescence intensity values were measured when the laser probe tip was directed perpendicular, rather than parallel, to tooth root surfaces. However, calculus-positive roots, particularly with calculus in markedly-raised ledges, yielded significantly greater mean DIAGNOdent laser autofluorescence intensity scores than calculus-free surfaces, regardless of probe tip orientation. DIAGNOdent autofluorescence intensity values >40 exhibited a stronger association with calculus (36.6 odds ratio) then measurements of ≥5 (20.1 odds ratio) when the laser probe tip was advanced parallel to root surfaces. Excellent intra- and inter-examiner reproducibility of autofluorescence intensity measurements was obtained with the DIAGNOdent laser fluorescence device on human tooth roots. Calculus-positive root surfaces exhibited significantly greater DIAGNOdent laser autofluorescence than calculus-free tooth roots, even with the laser probe tip directed parallel to root surfaces. These findings provide further in vitro validation of the potential utility of a DIAGNOdent laser fluorescence device for identifying dental calculus on human tooth root surfaces.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, W.W.; Choquette, K.D.; Gourley, P.L.

1998-01-27

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof are disclosed. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n {>=} 2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n {>=} 2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum. 12 figs.

Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Jun; Xia, Qing; Wang, Xiaofa

2017-10-01

Based on the extended spin-flip model, the all-optical flip-flop stability maps of the 1550nm vertical-cavity surface-emitting laser have been studied. Theoretical results show that excellent agreement is found between theoretical and the reported experimental results in polarization switching point current which is equal to 1.95 times threshold. Furthermore, the polarization bistable region is wide which is from 1.05 to 1.95 times threshold. A new method is presented that uses power difference between two linear polarization modes as the judging criterion of trigger degree and stability maps of all-optical flip-flop operation under different injection parameters are obtained. By alternately injecting set and reset pulse with appropriate parameters, the mutual conversion switching between two polarization modes is realized, the feasibility of all-optical flip-flop operation is checked theoretically. The results show certain guiding significance on the experimental study on all optical buffer technology.

Photonic crystal surface-emitting lasers enabled by an accidental Dirac point

DOEpatents

Chua, Song Liang; Lu, Ling; Soljacic, Marin

2014-12-02

A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, Weng W.; Choquette, Kent D.; Gourley, Paul L.

1998-01-01

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

2001-05-01

Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

The Ice, Cloud, and land Elevation Satellite (ICESat) Summary Mission Timeline and Performance Relative to Pre-Launch Mission Success Criteria

NASA Technical Reports Server (NTRS)

Webb, Charles E.; Zwally H. Jay; Abdalati, Waleed

2012-01-01

The Ice, Cloud and land Elevation Satellite (ICESat) mission was conceived, primarily, to quantify the spatial and temporal variations in the topography of the Greenland and Antarctic ice sheets. It carried on board the Geoscience Laser Altimeter System (GLAS), which measured the round-trip travel time of a laser pulse emitted from the satellite to the surface of the Earth and back. Each range derived from these measurements was combined with precise, concurrent orbit and pointing information to determine the location of the laser spot centroid on the Earth. By developing a time series of precise topographic maps for each ice sheet, changes in their surface elevations can be used to infer their mass balances.

Effect of radiant heat on conventional glass ionomer cements during setting by using a blue light diode laser system (445 nm).

PubMed

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2017-04-01

The aim of this in vitro study was to evaluate the effect of radiant heat on surface hardness of three conventional glass ionomer cements (GICs) by using a blue diode laser system (445 nm) and a light-emitting diode (LED) unit. Additionally, the safety of the laser treatment was evaluated. Thirty disk-shaped specimens were prepared of each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: group 1 was the control group of the study; in group 2, the specimens were irradiated for 60 s at the top surface using a LED light-curing unit; and in group 3, the specimens were irradiated for 60 s at the top surface using a blue light diode laser system (445 nm). Statistical analysis was performed using one-way ANOVA and Tukey post-hoc tests at a level of significance of a = 0.05. Radiant heat treatments, with both laser and LED devices, increased surface hardness (p < 0.05) but in different extent. Blue diode laser treatment was seemed to be more effective compared to LED treatment. There were no alterations in surface morphology or chemical composition after laser treatment. The tested radiant heat treatment with a blue diode laser may be advantageous for the longevity of GIC restorations. The safety of the use of blue diode laser for this application was confirmed.

Laser Doppler velocimetry using a modified computer mouse

NASA Astrophysics Data System (ADS)

Zaron, Edward D.

2016-10-01

A computer mouse has been modified for use as a low-cost laser Doppler interferometer and used to measure the two-component fluid velocity of a flowing soap film. The mouse sensor contains two vertical cavity surface emitting lasers, photodiodes, and signal processing hardware integrated into a single package, approximately 1 cm2 in size, and interfaces to a host computer via a standard USB port. Using the principle of self-mixing interferometry, whereby laser light re-enters the laser cavity after being scattered from a moving target, the Doppler shift and velocity of scatterers dispersed in the flow are measured. Observations of the boundary layer in a turbulent soap film channel flow demonstrate the capabilities of the sensor.

Photon generator

DOEpatents

Srinivasan-Rao, Triveni

2002-01-01

A photon generator includes an electron gun for emitting an electron beam, a laser for emitting a laser beam, and an interaction ring wherein the laser beam repetitively collides with the electron beam for emitting a high energy photon beam therefrom in the exemplary form of x-rays. The interaction ring is a closed loop, sized and configured for circulating the electron beam with a period substantially equal to the period of the laser beam pulses for effecting repetitive collisions.

Detection and mapping of trace explosives on surfaces under ambient conditions using multiphoton electron extraction spectroscopy (MEES).

PubMed

Tang, Shisong; Vinerot, Nataly; Fisher, Danny; Bulatov, Valery; Yavetz-Chen, Yehuda; Schechter, Israel

2016-08-01

Multiphoton electron extraction spectroscopy (MEES) is an analytical method in which UV laser pulses are utilized for extracting electrons from solid surfaces in multiphoton processes under ambient conditions. Counting the emitted electrons as a function of laser wavelength results in detailed spectral features, which can be used for material identification. The method has been applied to detection of trace explosives on a variety of surfaces. Detection was possible on dusty swabs spiked with explosives and also in the standard dry-transfer contamination procedure. Plastic explosives could also be detected. The analytical limits of detection (LODs) are in the sub pmole range, which indicates that MEES is one of the most sensitive detection methods for solid surface under ambient conditions. Scanning the surface with the laser allows for its imaging, such that explosives (as well as other materials) can be located. The imaging mode is also useful in forensic applications, such as detection of explosives in human fingerprints. Copyright © 2016 Elsevier B.V. All rights reserved.

RGB and white-emitting organic lasers on flexible glass.

PubMed

Foucher, C; Guilhabert, B; Kanibolotsky, A L; Skabara, P J; Laurand, N; Dawson, M D

2016-02-08

Two formats of multiwavelength red, green and blue (RGB) laser on mechanically-flexible glass are demonstrated. In both cases, three all-organic, vertically-emitting distributed feedback (DFB) lasers are assembled onto a common ultra-thin glass membrane substrate and fully encapsulated by a thin polymer overlayer and an additional 50 µm-thick glass membrane in order to improve the performance. The first device format has the three DFB lasers sitting next to each other on the glass substrate. The DFB lasers are simultaneously excited by a single overlapping optical pump, emitting spatially separated red, green and blue laser output with individual thresholds of, respectively, 28 µJ/cm(2), 11 µJ/cm(2) and 32 µJ/cm(2) (for 5 ns pump pulses). The second device format has the three DFB lasers, respectively the red, green and blue laser, vertically stacked onto the flexible glass. This device format emits a white laser output for an optical pump fluence above 42 µJ/cm(2).

Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

NASA Astrophysics Data System (ADS)

Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

2018-04-01

Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

Laser-induced fine structures on silicon exposed to THz-FEL

NASA Astrophysics Data System (ADS)

Irizawa, Akinori; Suga, Shigemasa; Nagashima, Takeshi; Higashiya, Atsushi; Hashida, Masaki; Sakabe, Shuji

2017-12-01

We found the irradiation of focused linearly polarized terahertz (THz)-waves emitted from THz free-electron laser (THz-FEL) engraved fine periodic stripe structures on the surfaces of single-crystal Si wafers. The experiments were performed at several wavelengths ranging from 50 to 82 μm with a macro-pulse fluence up to 32 J/cm2. The engraved structures are considered equivalent to the laser-induced periodic surface structures (LIPSS) produced by the irradiation of a femtosecond (fs)-pulsed laser in the near-infrared (NIR) region. However, the minimum period of ˜1/25 of the wavelength in the present case of THz-FEL is surely much smaller than those reported so far by use of fs-lasers and no more explicable by the so far proposed mechanisms. The finer LIPSS confirmed by longer-wavelength laser excitation by means of THz-FEL motivates investigation into the universal mechanism of LIPSS formation, which has been under a hot debate for decades.

Joint Services Electronics Program. Basic Research in Electronics (JSEP)

DTIC Science & Technology

1992-08-01

DBRs). Our DBR work allows us to develop improved vertical cavity surface-emitting lasers ( VCSELs ) and also to examine details of optical phenomena... in short-cavity lasers. We have used MBE regrowth techniques to provide current tunnelling into the device active region of the VCSEL . We use an AlAs... optical detector structures. We have already developed significant capability in the low temperature (2506C - 3000C) growth of undoped GaAs and AIo.3Gao

Ultrashort laser pulses and electromagnetic pulse generation in air and on dielectric surfaces.

PubMed

Sprangle, P; Peñano, J R; Hafizi, B; Kapetanakos, C A

2004-06-01

Intense, ultrashort laser pulses propagating in the atmosphere have been observed to emit sub-THz electromagnetic pulses (EMPS). The purpose of this paper is to analyze EMP generation from the interaction of ultrashort laser pulses with air and with dielectric surfaces and to determine the efficiency of conversion of laser energy to EMP energy. In our self-consistent model the laser pulse partially ionizes the medium, forms a plasma filament, and through the ponderomotive forces associated with the laser pulse, drives plasma currents which are the source of the EMP. The propagating laser pulse evolves under the influence of diffraction, Kerr focusing, plasma defocusing, and energy depletion due to electron collisions and ionization. Collective effects and recombination processes are also included in the model. The duration of the EMP in air, at a fixed point, is found to be a few hundred femtoseconds, i.e., on the order of the laser pulse duration plus the electron collision time. For steady state laser pulse propagation the flux of EMP energy is nonradiative and axially directed. Radiative EMP energy is present only for nonsteady state or transient laser pulse propagation. The analysis also considers the generation of EMP on the surface of a dielectric on which an ultrashort laser pulse is incident. For typical laser parameters, the power and energy conversion efficiency from laser radiation to EMP radiation in both air and from dielectric surfaces is found to be extremely small, < 10(-8). Results of full-scale, self-consistent, numerical simulations of atmospheric and dielectric surface EMP generation are presented. A recent experiment on atmospheric EMP generation is also simulated.

Dynamic features of bubble induced by a nanosecond pulse laser in still and flowing water

NASA Astrophysics Data System (ADS)

Charee, Wisan; Tangwarodomnukun, Viboon

2018-03-01

Underwater laser ablation techniques have been developed and employed to synthesis nanoparticles, to texture workpiece surface and to assist the material removal in laser machining process. However, the understanding of laser-material-water interactions, bubble formation and effects of water flow on ablation performance has still been very limited. This paper thus aims at exploring the formation and collapse of bubbles during the laser ablation of silicon in water. The effects of water flow rate on bubble formation and its consequences to the laser disturbance and cut features obtained in silicon were observed by using a high speed camera. A nanosecond pulse laser emitting the laser pulse energy of 0.2-0.5 mJ was employed in the experiment. The results showed that the bubble size was found to increase with the laser pulse energy. The use of high water flow rate can importantly facilitate the ejection of ablated particles from the workpiece surface, hence resulting in less deposition to the work surface and minimizing any disturbance to the laser beam during the ablation in water. Furthermore, a clean micro-groove in silicon wafer can successfully be produced when the process was performed in the high water flow rate condition. The findings of this study could provide an essential guideline for process selection, control and improvement in the laser micro-/submicro-fabrication using the underwater technique.

Feasibility Analysis and Demonstration of High-Speed Digital Imaging Using Micro-Arrays of Vertical Cavity Surface-Emitting Lasers

DTIC Science & Technology

2011-04-01

Proceedings, Bristol, UK (2006). 5. M. A. Mentzer, Applied Optics Fundamentals and Device Applications: Nano, MOEMS , and Biotechnology, CRC Taylor...ballistic sensing, flash x-ray cineradiography, digital image correlation, image processing al- gorithms, and applications of MOEMS to nano- and

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

Evaluation of laser speckle contrast imaging as an intrinsic method to monitor blood brain barrier integrity

PubMed Central

Dufour, Suzie; Atchia, Yaaseen; Gad, Raanan; Ringuette, Dene; Sigal, Iliya; Levi, Ofer

2013-01-01

The integrity of the blood brain barrier (BBB) can contribute to the development of many brain disorders. We evaluate laser speckle contrast imaging (LSCI) as an intrinsic modality for monitoring BBB disruptions through simultaneous fluorescence and LSCI with vertical cavity surface emitting lasers (VCSELs). We demonstrated that drug-induced BBB opening was associated with a relative change of the arterial and venous blood velocities. Cross-sectional flow velocity ratio (veins/arteries) decreased significantly in rats treated with BBB-opening drugs, ≤0.81 of initial values. PMID:24156049

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Matrix laser IR-visible image converter

NASA Astrophysics Data System (ADS)

Lipatov, N. I.; Biryukov, A. S.

2006-04-01

A new type of a focal matrix IR-visible image converter is proposed. The pixel IR detectors of the matrix are tunable microcavities of VCSEL (vertical-cavity surface emitting laser) semiconductor microstructures. The image conversion is performed due to the displacements of highly reflecting cavity mirrors caused by thermoelastic stresses in their microsuspensions appearing upon absorption of IR radiation. Analysis of the possibilities of the converter shows that its sensitivity is 10-3-10-2 K and the time response is 10-4-10-3 s. These characteristics determine the practical application of the converter.

Dynamics of laser-induced damage of spherical nanoparticles by high-intensity ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Komolov, Vladimir L.; Gruzdev, Vitaly E.; Przhibelskii, Sergey G.; Smirnov, Dmitry S.

2012-12-01

Damage of a metal spherical nanoparticle by femtosecond laser pulses is analyzed by splitting the overall process into two steps. The fast step includes electron photoemission from a nanoparticle. It takes place during direct action of a laser pulse and its rate is evaluated as a function of laser and particle parameters by two approaches. Obtained results suggest the formation of significant positive charge of the nanoparticles due to the photoemission. The next step includes ion emission that removes the excessive positive charge and modifies particle structure. It is delayed with respect to the photo-emission and is analyzed by a simple analytical model and modified molecular dynamics. Obtained energy distribution suggests generation of fast ions capable of penetrating into surrounding material and generating defects next to the nanoparticle. The modeling is extended to the case of a nanoparticle on a solid surface to understand the basic mechanism of surface laser damage initiated by nano-contamination. Simulations predict embedding the emitted ions into substrate within a spot with size significantly exceeding the original particle size. We discuss the relation of those effects to the problem of bulk and surface laser-induced damage of optical materials by single and multiple ultrashort laser pulses.

Exploring Ramsey-coherent population trapping atomic clock realized with pulsed microwave modulated laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jing; Yun, Peter; Tian, Yuan

2014-03-07

A scheme for a Ramsey-coherent population trapping (CPT) atomic clock that eliminates the acousto-optic modulator (AOM) is proposed and experimentally studied. Driven by a periodically microwave modulated current, the vertical-cavity surface-emitting laser emits a continuous beam that switches between monochromatic and multichromatic modes. Ramsey-CPT interference has been studied with this mode-switching beam. In eliminating the AOM, which is used to generate pulsed laser in conventional Ramsey-CPT atomic clock, the physics package of the proposed scheme is virtually the same as that of a conventional compact CPT atomic clock, although the resource budget for the electronics will slightly increase as amore » microwave switch should be added. By evaluating and comparing experimentally recorded signals from the two Ramsey-CPT schemes, the short-term frequency stability of the proposed scheme was found to be 46% better than the scheme with AOM. The experimental results suggest that the implementation of a compact Ramsey-CPT atomic clock promises better frequency stability.« less

Investigation of Carbon Fiber Reinforced Plastics Machining Using 355 nm Picosecond Pulsed Laser

NASA Astrophysics Data System (ADS)

Hu, Jun; Zhu, Dezhi

2018-06-01

Carbon fiber reinforced plastics (CFRP) has been widely used in the aircraft industry and automobile industry owing to its superior properties. In this paper, a Nd:YVO4 picosecond pulsed system emitting at 355 nm has been used for CFRP machining experiments to determine optimum milling conditions. Milling parameters including laser power, milling speed and hatch distance were optimized by using box-behnken design of response surface methodology (RSM). Material removal rate was influenced by laser beam overlap ratio which affects mechanical denudation. The results in heat affected zones (HAZ) and milling quality were discussed through the machined surface observed with scanning electron microscope. A re-focusing technique based on the experiment with different focal planes was proposed and milling mechanism was also analyzed in details.

VCSEL proliferation

NASA Astrophysics Data System (ADS)

Tatum, Jim

2007-02-01

Since the commercialization of Vertical Cavity Surface Emitting Lasers (VCSELs) in 1996, Finisar's Advanced Optical Components Division has shipped well over 50 Million VCSELs. The vast majority of these were shipped into the data communications industry, which was essentially the only volume application until 2005. The driver for VCSEL manufacturing might well shift to the increasingly popular laser based optical mouse. The advantages of the laser based mouse over traditional LED mice include operation on a wider range of surfaces, higher resolution, and increased battery lifetime. What is the next application that will drive growth in VCSELs? This paper will offer a historical perspective on the emergence of VCSELs from the laboratory to reality, and the companies that have played key roles in VCSEL commercialization. Furthermore, a perspective on the market needs of future VCSEL development and applications is described.

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Temporal coherence of high-order harmonics generated at solid surfaces

NASA Astrophysics Data System (ADS)

Hemmers, D.; Behmke, M.; Karsch, S.; Keyling, J.; Major, Z.; Stelzmann, C.; Pretzler, G.

2014-07-01

We present interferometric measurements of the temporal coherence of high-order harmonics generated by reflection of a titanium sapphire laser off a solid surface. It is found that the coherence length of the harmonic emission is significantly reduced compared with the bandwidth limited case. To identify the responsible mechanism, the acquired data were analyzed by means of particle-in-cell simulations, whose results show good agreement between the calculated spectra and the measured coherence times. We show that the observed broadening can be understood consistently by the occurrence of a Doppler shift induced by the moving plasma surface, which is dented by the radiation pressure of the laser pulse. In this case, this Doppler effect would also lead to positive chirp of the emitted radiation.

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Polarization effects associated with thermal processing of HY-80 structural steel using high-power laser diode array

NASA Astrophysics Data System (ADS)

Wu, Sheldon S. Q.; Baker, Bradford W.; Rotter, Mark D.; Rubenchik, Alexander M.; Wiechec, Maxwell E.; Brown, Zachary M.; Beach, Raymond J.; Matthews, Manyalibo J.

2017-12-01

Localized heating of roughened steel surfaces using highly divergent laser light emitted from high-power laser diode arrays was experimentally demonstrated and compared with theoretical predictions. Polarization dependence was analyzed using Fresnel coefficients to understand the laser-induced temperature rise of HY-80 steel plates under 383- to 612-W laser irradiation. Laser-induced, transient temperature distributions were directly measured using bulk thermocouple probes and thermal imaging. Finite-element analysis yielded quantitative assessment of energy deposition and heat transport in HY-80 steel using absorptivity as a tuning parameter. The extracted absorptivity values ranged from 0.62 to 0.75 for S-polarized and 0.63 to 0.85 for P-polarized light, in agreement with partially oxidized iron surfaces. Microstructural analysis using electron backscatter diffraction revealed a heat affected zone for the highest temperature conditions (612 W, P-polarized) as evidence of rapid quenching and an austenite to martensite transformation. The efficient use of diode arrays for laser-assisted advanced manufacturing technologies, such as hybrid friction stir welding, is discussed.

Near-field analysis of metallic DFB lasers at telecom wavelengths.

PubMed

Greusard, L; Costantini, D; Bousseksou, A; Decobert, J; Lelarge, F; Duan, G-H; De Wilde, Y; Colombelli, R

2013-05-06

We image in near-field the transverse modes of semiconductor distributed feedback (DFB) lasers operating at λ ≈ 1.3 μm and employing metallic gratings. The active region is based on tensile-strained InGaAlAs quantum wells emitting transverse magnetic polarized light and is coupled via an extremely thin cladding to a nano-patterned gold grating integrated on the device surface. Single mode emission is achieved, which tunes with the grating periodicity. The near-field measurements confirm laser operation on the fundamental transverse mode. Furthermore--together with a laser threshold reduction observed in the DFB lasers--it suggests that the patterning of the top metal contact can be a strategy to reduce the high plasmonic losses in this kind of systems.

1310nm VCSELs in 1-10Gb/s commercial applications

NASA Astrophysics Data System (ADS)

Jewell, Jack; Graham, Luke; Crom, Max; Maranowski, Kevin; Smith, Joseph; Fanning, Tom

2006-02-01

Beginning with 4 Gigabit/sec Fibre-Channel, 1310nm vertical-cavity surface-emitting lasers (VCSELs) are now entering the marketplace. Such VCSELs perform like distributed feedback lasers but have drive currents and heat dissipation like 850nm VCSELs, making them ideal for today's high-performance interconnects and the only choice for the next step in increased interconnection density. Transceiver performances at 4 and 10 Gigabits/sec over fiber lengths 10-40km are presented. The active material is extremely robust, resulting in excellent reliability.

Distributed feedback laser biosensor incorporating a titanium dioxide nanorod surface

NASA Astrophysics Data System (ADS)

Ge, Chun; Lu, Meng; Zhang, Wei; Cunningham, Brian T.

2010-04-01

A dielectric nanorod structure is used to enhance the label-free detection sensitivity of a vertically-emitting distributed feedback laser biosensor (DFBLB). The device is comprised of a replica molded plastic grating that is subsequently coated with a dye-doped polymer layer and a TiO2 nanorod layer produced by the glancing angle deposition technique. The DFBLB emission wavelength is modulated by the adsorption of biomolecules, whose greater dielectric permittivity with respect to the surrounding liquid media will increase the laser wavelength in proportion to the density of surface-adsorbed biomaterial. The nanorod layer provides greater surface area than a solid dielectric thin film, resulting in the ability to incorporate a greater number of molecules. The detection of a monolayer of protein polymer poly (Lys, Phe) is used to demonstrate that a 90 nm TiO2 nanorod structure improves the detection sensitivity by a factor of 6.6 compared to an identical sensor with a nonporous TiO2 surface.

Thermal resistance of etched-pillar vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Wipiejewski, Torsten; Peters, Matthew G.; Young, D. Bruce; Thibeault, Brian; Fish, Gregory A.; Coldren, Larry A.

1996-03-01

We discuss our measurements on thermal impedance and thermal crosstalk of etched-pillar vertical-cavity lasers and laser arrays. The average thermal conductivity of AlAs-GaAs Bragg reflectors is estimated to be 0.28 W/(cmK) and 0.35W/(cmK) for the transverse and lateral direction, respectively. Lasers with a Au-plated heat spreading layer exhibit a 50% lower thermal impedance compared to standard etched-pillar devices resulting in a significant increase of maximum output power. For an unmounted laser of 64 micrometer diameter we obtain an improvement in output power from 20 mW to 42 mW. The experimental results are compared with a simple analytical model showing the importance of heat sinking for maximizing the output power of vertical-cavity lasers.

THz polariton laser using an intracavity Mg:LiNbO₃ crystal with protective Teflon coating.

PubMed

Ortega, Tiago A; Pask, Helen M; Spence, David J; Lee, Andrew J

2017-02-20

An enhancement in the performance of a THz polariton laser based on an intracavity magnesium-doped lithium niobate crystal (Mg:LiNbO₃) in surface-emitted (SE) configuration is demonstrated resulting from the deposition of a protective Teflon coating on the total internal reflection surface of the crystal. In this cavity geometry the resonating fields undergo total internal reflection (TIR) inside the lithium niobate, and laser damage to that surface can be a limiting factor in performance. The protective layer prevents laser damage to the crystal surface, enabling higher pump power, yielding higher THz output power and wider frequency tuning range. With the unprotected crystal, narrow-band THz output tunable from 1.50 to 2.81 THz was produced, with maximum average output power of 20.1 µW at 1.76 THz for 4 W diode pump power (limited by laser damage to the crystal). With the Teflon coating, no laser damage to the crystal was observed, and the system produced narrow-band THz output tunable from 1.46 to 3.84 THz, with maximum average output power of 56.8 µW at 1.76 THz for 6.5 W diode pump power. This is the highest average output power and the highest diode-to-terahertz conversion efficiency ever reported for an intracavity terahertz polariton laser.

Antenna coupled photonic wire lasers

DOE PAGES

Kao, Tsung-Kao; Cai, Xiaowei; Lee, Alan W. M.; ...

2015-06-22

Slope efficiency (SE) is an important performance metric for lasers. In conventional semiconductor lasers, SE can be optimized by careful designs of the facet (or the modulation for DFB lasers) dimension and surface. However, photonic wire lasers intrinsically suffer low SE due to their deep sub-wavelength emitting facets. Inspired by microwave engineering techniques, we show a novel method to extract power from wire lasers using monolithically integrated antennas. These integrated antennas significantly increase the effective radiation area, and consequently enhance the power extraction efficiency. When applied to wire lasers at THz frequency, we achieved the highest single-side slope efficiency (~450more » mW/A) in pulsed mode for DFB lasers at 4 THz and a ~4x increase in output power at 3 THz compared with a similar structure without antennas. This work demonstrates the versatility of incorporating microwave engineering techniques into laser designs, enabling significant performance enhancements.« less

Destruction of monocrystalline silicon with nanosecond pulsed fiber laser accompanied by the oxidation of ablation microparticles

NASA Astrophysics Data System (ADS)

Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

2013-11-01

In this work, we report an observation of process of local destruction monocrystalline silicon with a scanning beam irradiation of pulse ytterbium fiber laser with a wavelength λ= 1062 nm, accompanied by the oxidation of ablation microparticles. It is shown that depending on the power density of irradiation was observed a large scatter size of the microparticles. From a certain average power density is observed beginning oxidation particulate emitted from the surface of the irradiated area. By varying the parameters of the laser beam such as scanning speed, pulse repetition rate, overlap of laser spot, radiation dose can be achieved almost complete oxidation of all formed during the ablation of microparticles.

Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

PubMed

Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

2009-02-10

Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

Ultrafast monoenergetic electron source by optical waveform control of surface plasmons.

PubMed

Dombi, Péter; Rácz, Péter

2008-03-03

We propose coherent control of photoelectron acceleration at metal surfaces mediated by surface plasmon polaritons. A high degree of spectral and spatial control of the emission process can be exercised by amplitude and phase controlling the optical waveform (including the carrier-envelope phase) of the plasmon generating few-cycle laser pulse. Numerical results show that the emitted electron beam is highly directional and monoenergetic suggesting applications in contemporary ultrafast methods where ultrashort, well-behaved electron pulses are required.

Metasurface quantum-cascade laser with electrically switchable polarization

DOE PAGES

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.; ...

2017-04-20

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Metasurface quantum-cascade laser with electrically switchable polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

X-ray laser system, x-ray laser and method

DOEpatents

London, Richard A.; Rosen, Mordecai D.; Strauss, Moshe

1992-01-01

Disclosed is an x-ray laser system comprising a laser containing generating means for emitting short wave length radiation, and means external to said laser for energizing said generating means, wherein when the laser is in an operative mode emitting radiation, the radiation has a transverse coherence length to width ratio of from about 0.05 to 1. Also disclosed is a method of adjusting the parameters of the laser to achieve the desired coherence length to laser width ratio.

Evaluating a vessel for suitability for containing fluid

DOEpatents

Barefield, II, James E.; Judge, Elizabeth J.; Le, Loan A.; Lopez, Leon N.; Beveridge, Andrew C.; Chapman, Daniel R.; Taylor, Seth T.

2017-05-30

A method for evaluating a vessel for suitability to contain a fluid includes providing a vessel and forming a polished surface portion of the vessel by removing oxidation and/or contaminants from a portion of the vessel. The method further includes applying a focused laser to the polished surface portion to form plasma on the polished surface portion, and determining whether the vessel is suitable for containing a fluid based on silicon content of the polished surface portion. The silicon content is estimated based on light emitted from the plasma.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

PubMed

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-01

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

Optical levitation and translation of a microscopic particle by use of multiple beams generated by vertical-cavity surface-emitting laser array sources.

PubMed

Ogura, Yusuke; Shirai, Nobuhiro; Tanida, Jun

2002-09-20

An optical levitation and translation method for a microscopic particle by use of the resultant force induced by multiple light beams is studied. We show dependence of the radiation pressure force on the illuminating distribution by numerical calculation, and we find that the strongest axial force is obtained by a specific spacing period of illuminating beams. Extending the optical manipulation technique by means of vertical-cavity surface-emitting laser (VCSEL) array sources [Appl. Opt. 40, 5430 (2001)], we are the first, to our knowledge, to demonstrate levitation of a particle and its translation while levitated by using a VCSEL array. The vertical position of the target particle can be controlled in a range of a few tens of micrometers with an accuracy of 2 microm or less. The analytical and experimental results suggest that use of multiple beams is an effective method to levitate a particle with low total illumination power. Some issues on the manipulation method that uses multiple beams are discussed.

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

NASA Astrophysics Data System (ADS)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

2008-04-01

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiO{sub x} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fricke-Begemann, T., E-mail: fricke-begemann@llg-ev.de; Ihlemann, J.; Wang, N.

2015-09-28

Silicon nanocrystals have been generated by laser induced phase separation in SiO{sub x} films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiO{sub x} films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 10{sup 5 }W/cm{sup 2}, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the centralmore » irradiated region is oxidized to SiO{sub 2} and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power.« less

Method and system for laser-based formation of micro-shapes in surfaces of optical elements

DOEpatents

Bass, Isaac Louis; Guss, Gabriel Mark

2013-03-05

A method of forming a surface feature extending into a sample includes providing a laser operable to emit an output beam and modulating the output beam to form a pulse train having a plurality of pulses. The method also includes a) directing the pulse train along an optical path intersecting an exposed portion of the sample at a position i and b) focusing a first portion of the plurality of pulses to impinge on the sample at the position i. Each of the plurality of pulses is characterized by a spot size at the sample. The method further includes c) ablating at least a portion of the sample at the position i to form a portion of the surface feature and d) incrementing counter i. The method includes e) repeating steps a) through d) to form the surface feature. The sample is free of a rim surrounding the surface feature.

Characterization of particle emission from laser printers.

PubMed

Scungio, Mauro; Vitanza, Tania; Stabile, Luca; Buonanno, Giorgio; Morawska, Lidia

2017-05-15

Emission of particles from laser printers in office environments is claimed to have impact on human health due to likelihood of exposure to high particle concentrations in such indoor environments. In the present paper, particle emission characteristics of 110 laser printers from different manufacturers were analyzed, and estimations of their emission rates were made on the basis of measurements of total concentrations of particles emitted by the printers placed in a chamber, as well as particle size distributions. The emission rates in terms of number, surface area and mass were found to be within the ranges from 3.39×10 8 partmin -1 to 1.61×10 12 partmin -1 , 1.06×10 0 mm 2 min -1 to 1.46×10 3 mm 2 min -1 and 1.32×10 -1 μgmin -1 to 1.23×10 2 μgmin -1 , respectively, while the median mode value of the emitted particles was found equal to 34nm. In addition, the effect of laser printing emissions in terms of employees' exposure in offices was evaluated on the basis of the emission rates, by calculating the daily surface area doses (as sum of alveolar and tracheobronchial deposition fraction) received assuming a typical printing scenario. In such typical printing conditions, a relatively low total surface area dose (2.7mm 2 ) was estimated for office employees with respect to other indoor microenvironments including both workplaces and homes. Nonetheless, for severe exposure conditions, characterized by operating parameters falling beyond the typical values (i.e. smaller office, lower ventilation, printer located on the desk, closer to the person, higher printing frequency etc.), significantly higher doses are expected. Copyright © 2017 Elsevier B.V. All rights reserved.

Zinc Vacancy Formation and its Effect on the Conductivity of ZnO

NASA Astrophysics Data System (ADS)

Khan, Enamul; Weber, Marc; Langford, Steve; Dickinson, Tom

2010-03-01

Exposing single crystal ZnO to 193-nm ArF excimer laser radiation can produce metallic zinc nanoparticles along the surface. The particle production mechanism appears to involve interstitial-vacancy pair formation in the near-surface bulk. Conductivity measurements made with one probe inside the laser spot and the other outside show evidence for rectifying behavior. Positron annihilation spectroscopy confirms the presence of Zn vacancies. We suggest that Zn vacancies are a possible source of p-type behavior in irradiated ZnO. Quadrupole mass spectroscopy shows that both oxygen and zinc are emitted during irradiation. Electron-hole pair production has previously been invoked to account for particle desorption from ZnO during UV illumination. Our results suggest that preexisting and laser-generated defects play a critical role in particle desorption and Zn vacancy formation.

Electron-beam pumped laser structures based on MBE grown {ZnCdSe}/{ZnSe} superlattices

NASA Astrophysics Data System (ADS)

Kozlovsky, V. I.; Shcherbakov, E. A.; Dianov, E. M.; Krysa, A. B.; Nasibov, A. S.; Trubenko, P. A.

1996-02-01

Cathodoluminescence (CL), photoreflection (PR), phototransmission (PT) of single and multiquantum wells (MQWs) and strain layer {ZnCdSe}/{ZnSe} superlattices (SLs) grown by molecular beam epitaxy (MBE) were studied. An increase of the Stokes shift with the number of quantum wells (QWs) and the appearance of new lines in CL and PT spectra were observed. Room temperature (RT) vertical-cavity surface-emitting laser (VCSEL) operation was achieved by using the SL structures. Output power up to 2.2 W in single longitudinal mode with λ = 493 nm was obtained. Cut facet laser wavelength of the same SL structure was 502 nm.

Surface plasmon quantum cascade lasers as terahertz local oscillators.

PubMed

Hajenius, M; Khosropanah, P; Hovenier, J N; Gao, J R; Klapwijk, T M; Barbieri, S; Dhillon, S; Filloux, P; Sirtori, C; Ritchie, D A; Beere, H E

2008-02-15

We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto interference fringes, which are similar to those found in narrow double-metal waveguide QCLs. Compared to the latter, a more directional beam allows for better coupling of the radiation power to the mixer. We obtain a receiver noise temperature of 1050 K when the mixer is at 2 K, which, to our knowledge, is the highest sensitivity reported at frequencies beyond 2.5 THz.

Active optical system for advanced 3D surface structuring by laser remelting

NASA Astrophysics Data System (ADS)

Pütsch, O.; Temmler, A.; Stollenwerk, J.; Willenborg, E.; Loosen, P.

2015-03-01

Structuring by laser remelting enables completely new possibilities for designing surfaces since material is redistributed but not wasted. In addition to technological advantages, cost and time benefits yield from shortened process times, the avoidance of harmful chemicals and the elimination of subsequent finishing steps such as cleaning and polishing. The functional principle requires a completely new optical machine technology that maintains the spatial and temporal superposition and manipulation of three different laser beams emitted from two laser sources of different wavelength. The optical system has already been developed and demonstrated for the processing of flat samples of hot and cold working steel. However, since particularly the structuring of 3D-injection molds represents an application example of high innovation potential, the optical system has to take into account the elliptical beam geometry that occurs when the laser beams irradiate a curved surface. To take full advantage of structuring by remelting for the processing of 3D surfaces, additional optical functionality, called EPS (elliptical pre-shaping) has to be integrated into the existing set-up. The development of the beam shaping devices not only requires the analysis of the mechanisms of the beam projection but also a suitable optical design. Both aspects are discussed in this paper.

Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum

PubMed Central

Seghilani, Mohamed S.; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

2016-01-01

The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here “orbital birefringence”, based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create “orbital gain dichroism” allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (<1°) diffraction limited beam, emitting 49 mW output power in the near-IR at λ ≃ 1 μm, a charge l = ±1, … ±4 (>50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications. PMID:27917885

Semiconductor lasers in rheumatological treatment

NASA Astrophysics Data System (ADS)

Pascu, Mihail-Lucian; Suteanu, S.; Ignat, P.; Pruna, Simion; Chitu, A.

1995-03-01

A computer controlled equipment, containing 6 lasers (HeNe and 5 diode lasers--DL) conceived to be used in rheumatological treatment is reported. DL emit at 895 nm and for typical applications, their expanded spots are superposed within the irradiation plane, on the HeNE defocused spot used to define the surface to be irradiated. DL emit 100 nsec pulses between 0.5 KHz and 1.5 KHz repetition rate and 0.5 mW average power (measured at 1 KHz). 150 patients with rheumathologic diseases were treated: lumbar spondylosis (75), gonarthrosis (30), cervical spondylosis (21), coxarthrosis (15), Heberden and Bouchard (9). The treatment consisted of: group I, 50 patients--laser therapy, 10 min/day, 10 days; group II, 50 patients--classical antirheumatic treatment; group III, 50 patients--mixed treatment. Assessment of sympathetic skin activity made using reactometry measurements, shows that latency time was longer before irradiation, 1867 +/- 289) msec then after, (1234 +/- 321) msec. Pain rating indexes decreasing for all three groups of patients were measured. Better results for more superficial diseases were obtained and best results were observed after irradiation with 1 KHz - 1.5 KHz repetition rate IR pulses. Better results were obtained when spot irradiation in a few points combined with zone irradiations was used.

Miniature Tunable Laser Spectrometer for Detection of a Trace Gas

NASA Technical Reports Server (NTRS)

Christensen, Lance E. (Inventor)

2017-01-01

An open-path laser spectrometer (OPLS) for measuring a concentration of a trace gas, the OPLS including an open-path multi-pass analysis region including a first mirror, a second mirror at a distance and orientation from the first mirror, and a support structure for locating the mirrors, a laser coupled to the analysis region and configured to emit light of a wavelength range and to enable a plurality of reflections of the emitted light between the mirrors, a detector coupled to the analysis region and configured to detect a portion of the emitted light impinging on the detector and to generate a corresponding signal, and an electronic system coupled to the laser and the detector, and configured to adjust the wavelength range of the emitted light from the laser based on the generated signal, and to measure the concentration of the trace gas based on the generated signal.

Electron acceleration and high harmonic generation by relativistic surface plasmons

NASA Astrophysics Data System (ADS)

Cantono, Giada; Luca Fedeli Team; Andrea Sgattoni Team; Andrea Macchi Team; Tiberio Ceccotti Team

2016-10-01

Intense, short laser pulses with ultra-high contrast allow resonant surface plasmons (SPs) excitation on solid wavelength-scale grating targets, opening the way to the extension of Plasmonics in the relativistic regime and the manipulation of intense electromagnetic fields to develop new short, energetic, laser-synchronized radiation sources. Recent theoretical and experimental studies have explored the role of SP excitation in increasing the laser-target coupling and enhancing ion acceleration, high-order harmonic generation and surface electron acceleration. Here we present our results on SP driven electron acceleration from grating targets at ultra-high laser intensities (I = 5 ×1019 W/cm2, τ = 25 fs). When the resonant condition for SP excitation is fulfilled, electrons are emitted in a narrow cone along the target surface, with a total charge of about 100 pC and energy spectra peaked around 5 MeV. Distinguishing features of the resonant process were investigated by varying the incidence angle, grating type and with the support of 3D PIC simulations, which closely reproduced the experimental data. Open challenges and further measurements on high-order harmonic generation in presence of a relativistic SP will also be discussed.

Everlasting Dark Printing on Alumina by Laser

NASA Astrophysics Data System (ADS)

Penide, J.; Quintero, F.; Arias-González, F.; Fernández, A.; del Val, J.; Comesaña, R.; Riveiro, A.; Lusquiños, F.; Pou, J.

Marks or prints are needed in almost every material, mainly for decorative or identification purposes. Despite alumina is widely employed in many different industries, the need of printing directly on its surface is still a complex problem. In this sense, lasers have largely demonstrated their high capacities to mark almost every material including ceramics, but performing dark permanent marks on alumina is still an open challenge. In this work we present the results of a comprehensive experimental analysis on the process of marking alumina by laser. Four different laser sources were used in this study: a fiber laser (1075 nm) and three diode pumped Nd:YVO4 lasers emitting at near-infrared (1064 nm), visible (532 nm) and ultraviolet (355 nm) wavelengths, respectively. The results obtained with the four lasers were compared and physical processes involved were explained in detail. Colorimetric analyses allowed to identify the optimal parameters and conditions to produce everlasting and high contrast marks on alumina.

New developments in THz-time domain spectroscopy involving ML-VECSELs

NASA Astrophysics Data System (ADS)

Apostolopoulos, Vasilis; Tropper, Anne C.; Keenlyside, Benjamin; Chen-Sverre, Theo; Woods, Jonathan R. C.

2018-02-01

The THz time domain spectrometer (THz-TDS) has revolutionized the adoption of THz science in fields such as medicine, material characterization, pharmaceutical research and biology among others. Traditionally a THz-TDS was based on a titanium sapphire laser, while most of the commercially sold spectrometers today adopt fiber lasers. Vertical External Cavity Surface emitting lasers or VECSELs have potential to be the future laser of choice for the implementation of THz spectrometers, as they are small, low-cost, low noise and high repetition rate. Here I will outline the progress in our laboratory and the general community concerning VECSEL-THz technology and I will account the problems that have to be solved for the VECSEL-THz technology to succeed.

Long-wavelength vertical-cavity laser research at Gore

NASA Astrophysics Data System (ADS)

Jayaraman, Vijaysekhar; Geske, J. C.; MacDougal, Michael H.; Peters, Frank H.; Lowes, Ted D.; Char, T. T.; Van Deusen, Dale R.; Goodnough, T.; Donhowe, Mark N.; Kilcoyne, Sean P.; Welch, David J.

1999-04-01

Vertical cavity surface emitting lasers (VCSELs) operating near 1310 or 1550 nm have been the subject of intensive research by multiple groups for several years. In the past year at Gore, we have demonstrated the first 1300 nm VCSELs which operate with useful power, high modulation rate, and low voltage over the commercial temperature range of 0 - 70 degree(s)C. These results have been achieved using a new structure in which an 850 nm VCSEL optical pump is integrated with the 1300 nm VCSEL. Electrical drive is applied to the 850 nm pump, and 1300 nm light is emitted from the integrated structure. This approach has resulted in over a milliwatt of single transverse mode power at room temperature, and several hundred microwatts of single transverse mode power at 70 degree(s)C. In addition, these devices demonstrate multi-gigabit modulation and excellent coupling efficiency to single-mode fiber.

Sub-micrometric surface texturing of AZ31 Mg-alloy through two-beam direct laser interference patterning with a ns-pulsed green fiber laser

NASA Astrophysics Data System (ADS)

Furlan, Valentina; Biondi, Marco; Demir, Ali Gökhan; Pariani, Giorgio; Previtali, Barbara; Bianco, Andrea

2017-11-01

Two-beam direct laser interference patterning (DLIP) is the method that employs two beams and provides control over the pattern geometry by regulating the angle between the beams and the wavelength of the beam. Despite the simplistic optical arrangement required for the method, the feasibility of sub-micrometric patterning of a surface depends on the correct manipulation of the process parameters, especially in the case of metallic materials. Magnesium alloys, from this point of view, exhibit further difficulty in processability due to low melting point and high reactivity. With biocompatibility and biodegradability features, Mg-alloy implants can take further advantage of surface structuring for tailoring the biological behaviour. In this work, a two-beam DLIP setup has been developed employing an industrial grade nanosecond-pulsed fiber laser emitting at 532 nm. The high repetition rate and ramped pulse profile provided by the laser were exploited for a more flexible control over the energy content deposited over the heat-sensitive Mg-alloy. The paper describes the strategies developed for controlling ramped laser emission at 20 kHz repetition rate. The process feasibility window was assessed within a large range of parameters. Within the feasibility window, a complete experimental plan was applied to investigate the effect of main laser process parameters on the pattern dimensions. Periodic surface structures with good definition down to 580 nm ± 20 nm spacing were successfully produced.

Comprehensive studies of ultrashort laser pulse ablation of tin target at terawatt power

NASA Astrophysics Data System (ADS)

Elsied, Ahmed M.; Diwakar, Prasoon K.; Hassanein, Ahmed

2018-01-01

The fundamental properties of ultrashort laser interactions with metals using up to terawatt power were comprehensively studied, i.e., specifically mass ablation, nanoparticle formation, and ion dynamics using multitude of diagnostic techniques. Results of this study can be useful in many fields of research including spectroscopy, micromachining, thin film fabrication, particle acceleration, physics of warm dense matter, and equation-of-state determination. A Ti:Sapphire femtosecond laser system (110 mJ maximum energy, 40 fs, 800 nm, P-polarized, single pulse mode) was used, which delivered up to 3 terawatt laser power to ablate 1 mm tin film in vacuum. The experimental analysis includes the effect of the incident laser fluence on the ablated mass, size of the ablated area, and depth of ablation using white light profilometer. Atomic force microscope was used to measure the emitted particles size distribution at different laser fluence. Faraday cup (FC) detector was used to analyze the emitted ions flux by measuring the velocity, and the total charge of the emitted ions. The study shows that the size of emitted particles follows log-normal distribution with peak shifts depending on incident laser fluence. The size of the ablated particles ranges from 20 to 80 nm. The nanoparticles deposited on the wafer tend to aggregate and to be denser as the incident laser fluence increases as shown by AFM images. Laser ablation depth was found to increase logarithmically with laser fluence then leveling off at laser fluence > 400 J/cm2. The total ablated mass tends to increase logarithmically with laser fluence up to 60 J/cm2 while, increases gradually at higher fluence due to the increase in the ablated area. The measured ion emitted flux shows a linear dependence on laser fluence with two distinct regimes. Strong dependence on laser fluence was observed at fluences < 350 J/cm2. Also, a slight enhancement in ion velocity was observed with increasing laser fluence up to 350 J/cm2.

Exponentially decaying interaction potential of cavity solitons

NASA Astrophysics Data System (ADS)

Anbardan, Shayesteh Rahmani; Rimoldi, Cristina; Kheradmand, Reza; Tissoni, Giovanna; Prati, Franco

2018-03-01

We analyze the interaction of two cavity solitons in an optically injected vertical cavity surface emitting laser above threshold. We show that they experience an attractive force even when their distance is much larger than their diameter, and eventually they merge. Since the merging time depends exponentially on the initial distance, we suggest that the attraction could be associated with an exponentially decaying interaction potential, similarly to what is found for hydrophobic materials. We also show that the merging time is simply related to the characteristic times of the laser, photon lifetime, and carrier lifetime.

Beam Steering Analysis in Optically Phased Vertical Cavity Surface Emitting Laser Array

NASA Astrophysics Data System (ADS)

Xun, Meng; Sun, Yun; Xu, Chen; Xie, Yi-Yang; Jin, Zhi; Zhou, Jing-Tao; Liu, Xin-Yu; Wu, De-Xin

2018-03-01

Not Available Supported by the ‘Supporting First Action’ Joint Foundation for Outstanding Postdoctoral Program under Grant Nos Y7YBSH0001 and Y7BSH14001, the National Natural Science Foundation of China under Grant No 61434006, and the National Key Basic Research Program of China under Grant No 2017YFB0102302.

Ultrafast Directional Beam Switching in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast directional beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 microns in diameter placed about 1 micron apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degrees.

High Bandwidth-Efficiency Resonant Cavity Enhanced Schottky Photodiodes for 800-850 nm Wavelength Operation

DTIC Science & Technology

1998-05-25

at least 50 nm wide centered around 830 nm wavelength. The layers are grown by molecular beam epitaxy on a semi- insulating GaAs substrate. The...limited by the material properties. With the advent of GaAs vertical-cavity surface-emitting lasers ~ VCSEL !,2 the 800–850 nm wavelength range has recently

Evaluating De-centralised and Distributional Options for the Distributed Electronic Warfare Situation Awareness and Response Test Bed

DTIC Science & Technology

2013-12-01

effectors (deployed on ground based or aerial platforms) to detect , identify, locate, track or suppress stationary or slow moving surface based RF...ground based or aerial platforms) to detect , identify, locate, track or suppress stationary or slow moving surface based RF emitting targets. In the...Electronic Support EO Electro-Optic FPGAs Field Programmable Gate Arrays IR Infra-red LADAR Laser Detection and Ranging OSX Mac OS X; the apple

Ordered materials for organic electronics and photonics.

PubMed

O'Neill, Mary; Kelly, Stephen M

2011-02-01

We present a critical review of semiconducting/light emitting, liquid crystalline materials and their use in electronic and photonic devices such as transistors, photovoltaics, OLEDs and lasers. We report that annealing from the mesophase improves the order and packing of organic semiconductors to produce state-of-the-art transistors. We discuss theoretical models which predict how charge transport and light emission is affected by the liquid crystalline phase. Organic photovoltaics and OLEDs require optimization of both charge transport and optical properties and we identify the various trade-offs involved for ordered materials. We report the crosslinking of reactive mesogens to give pixellated full-colour OLEDs and distributed bi-layer photovoltaics. We show how the molecular organization inherent to the mesophase can control the polarization of light-emitting devices and the gain in organic, thin-film lasers and can also provide distributed feedback in chiral nematic mirrorless lasers. We update progress on the surface alignment of liquid crystalline semiconductors to obtain monodomain devices without defects or devices with spatially varying properties. Finally the significance of all of these developments is assessed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser cleaning on Roman coins

NASA Astrophysics Data System (ADS)

Drakaki, E.; Karydas, A. G.; Klinkenberg, B.; Kokkoris, M.; Serafetinides, A. A.; Stavrou, E.; Vlastou, R.; Zarkadas, C.

Ancient metal objects react with moisture and environmental chemicals to form various corrosion products. Because of the unique character and high value of such objects, any cleaning procedure should guarantee minimum destructiveness. The most common treatment used is mechanical stripping, in which it is difficult to avoid surface damage when employed. Lasers are currently being tested for a wide range of conservation applications. Since they are highly controllable and can be selectively applied, lasers can be used to achieve more effective and safer cleaning of archaeological artifacts and protect their surface details. The basic criterion that motivated us to use lasers to clean Roman coins was the requirement of pulsed emission, in order to minimize heat-induced damages. In fact, the laser interaction with the coins has to be short enough, to produce a fast removal of the encrustation, avoiding heat conduction into the substrate. The cleaning effects of three lasers operating at different wavelengths, namely a TEA CO2 laser emitting at 10.6 μm, an Er:YAG laser at 2.94 μm, and a 2ω-Nd:YAG laser at 532 nm have been compared on corroded Romans coins and various atomic and nuclear techniques have also been applied to evaluate the efficiency of the applied procedure.

Hot-electron surface retention in intense short-pulse laser-matter interactions.

PubMed

Mason, R J; Dodd, E S; Albright, B J

2005-07-01

Implicit hybrid plasma simulations predict that a significant fraction of the energy deposited into hot electrons can be retained near the surface of targets with steep density gradients illuminated by intense short-pulse lasers. This retention derives from the lateral transport of heated electrons randomly emitted in the presence of spontaneous magnetic fields arising near the laser spot, from geometric effects associated with a small hot-electron source, and from E fields arising in reaction to the ponderomotive force. Below the laser spot hot electrons are axially focused into a target by the B fields, and can filament in moderate Z targets by resistive Weibel-like instability, if the effective background electron temperature remains sufficiently low. Carefully engineered use of such retention in conjunction with ponderomotive density profile steepening could result in a reduced hot-electron range that aids fast ignition. Alternatively, such retention may disturb a deeper deposition needed for efficient radiography and backside fast ion generation.

Investigation of room temperature UV emission of ZnO films with different defect densities induced by laser irradiation.

PubMed

Zhao, Yan; Jiang, Yijian

2010-08-01

We studied the room temperature UV emission of ZnO films with different defect densities which is fabricated by KrF laser irradiation process. It is shown room temperature UV photoluminescence of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO) (1LO, 2LO). With increase of the defect density, the FX emission decreased and FX-LO emission increased dramatically; and the relative strengths of FX to FX-LO emission intensities determine the peak position and intensity of UV emission. What is more, laser irradiation with moderate energy density could induce the crystalline ZnO film with very flat and smooth surface. This investigation indicates that KrF laser irradiation could effectively modulate the exciton emission and surface morphology, which is important for the application of high performance of UV emitting optoelectronic devices. Copyright 2010 Elsevier B.V. All rights reserved.

Fluorescent image tracking velocimeter

DOEpatents

Shaffer, Franklin D.

1994-01-01

A multiple-exposure fluorescent image tracking velocimeter (FITV) detects and measures the motion (trajectory, direction and velocity) of small particles close to light scattering surfaces. The small particles may follow the motion of a carrier medium such as a liquid, gas or multi-phase mixture, allowing the motion of the carrier medium to be observed, measured and recorded. The main components of the FITV include: (1) fluorescent particles; (2) a pulsed fluorescent excitation laser source; (3) an imaging camera; and (4) an image analyzer. FITV uses fluorescing particles excited by visible laser light to enhance particle image detectability near light scattering surfaces. The excitation laser light is filtered out before reaching the imaging camera allowing the fluoresced wavelengths emitted by the particles to be detected and recorded by the camera. FITV employs multiple exposures of a single camera image by pulsing the excitation laser light for producing a series of images of each particle along its trajectory. The time-lapsed image may be used to determine trajectory and velocity and the exposures may be coded to derive directional information.

Simulation of a polarized laser beam reflected at the sea surface: modeling and validation

NASA Astrophysics Data System (ADS)

Schwenger, Frédéric

2015-05-01

A 3-D simulation of the polarization-dependent reflection of a Gaussian shaped laser beam on the dynamic sea surface is presented. The simulation considers polarized or unpolarized laser sources and calculates the polarization states upon reflection at the sea surface. It is suitable for the radiance calculation of the scene in different spectral wavebands (e.g. near-infrared, SWIR, etc.) not including the camera degradations. The simulation also considers a bistatic configuration of laser source and receiver as well as different atmospheric conditions. In the SWIR, the detected total power of reflected laser light is compared with data collected in a field trial. Our computer simulation combines the 3-D simulation of a maritime scene (open sea/clear sky) with the simulation of polarized or unpolarized laser light reflected at the sea surface. The basic sea surface geometry is modeled by a composition of smooth wind driven gravity waves. To predict the input of a camera equipped with a linear polarizer, the polarized sea surface radiance must be calculated for the specific waveband. The s- and p-polarization states are calculated for the emitted sea surface radiance and the specularly reflected sky radiance to determine the total polarized sea surface radiance of each component. The states of polarization and the radiance of laser light specularly reflected at the wind-roughened sea surface are calculated by considering the s- and p- components of the electric field of laser light with respect to the specular plane of incidence. This is done by using the formalism of their coherence matrices according to E. Wolf [1]. Additionally, an analytical statistical sea surface BRDF (bidirectional reflectance distribution function) is considered for the reflection of laser light radiances. Validation of the simulation results is required to ensure model credibility and applicability to maritime laser applications. For validation purposes, field measurement data (images and meteorological data) was analyzed. An infrared laser, with or without a mounted polarizer, produced laser beam reflection at the water surface and images were recorded by a camera equipped with a polarizer with horizontal or vertical alignment. The validation is done by numerical comparison of measured total laser power extracted from recorded images with the corresponding simulation results. The results of the comparison are presented for different incident (zenith/azimuth) angles of the laser beam and different alignment for the laser polarizers (vertical/horizontal/without) and the camera (vertical/horizontal).

Measurement of deformations of models in a wind tunnel

NASA Astrophysics Data System (ADS)

Charpin, F.; Armand, C.; Selvaggini, R.

Techniques used at the ONERA Modane Center to monitor geometric variations in scale-models in wind tunnel trials are described. The methods include: photography of reflections from mirrors embedded in the model surface; laser-based torsiometry with polarized mirrors embedded in the model surface; predictions of the deformations using numerical codes for the model surface mechanical characteristics and the measured surface stresses; and, use of an optical detector to monitor the position of luminous fiber optic sources emitting from the model surfaces. The data enhance the confidence that the wind tunnel aerodynamic data will correspond with the in-flight performance of full scale flight surfaces.

Imaging laser radar for high-speed monitoring of the environment

NASA Astrophysics Data System (ADS)

Froehlich, Christoph; Mettenleiter, M.; Haertl, F.

1998-01-01

In order to establish mobile robot operations and to realize survey and inspection tasks, robust and precise measurements of the geometry of the 3D environment is the basis sensor technology. For visual inspection, surface classification, and documentation purposes, however, additional information concerning reflectance of measured objects is necessary. High-speed acquisition of both geometric and visual information is achieved by means of an active laser radar, supporting consistent range and reflectance images. The laser radar developed at Zoller + Froehlich (ZF) is an optical-wavelength system measuring the range between sensor and target surface as well as the reflectance of the target surface, which corresponds to the magnitude of the back scattered laser energy. In contrast to other range sensing devices, the ZF system is designed for high-speed and high- performance operation in real indoor and outdoor environments, emitting a minimum of near-IR laser energy. It integrates a single-point laser measurement system and a mechanical deflection system for 3D environmental measurements. This paper reports details of the laser radar which is designed to cover requirements with medium range applications. It outlines the performance requirements and introduces the two-frequency phase-shift measurement principle. The hardware design of the single-point laser measurement system, including the main modulates, such as the laser head, the high frequency unit and the signal processing unit are discussed in detail. The paper focuses on performance data of the laser radar, including noise, drift over time, precision, and accuracy with measurements. It discusses the influences of ambient light, surface material of the target, and ambient temperature for range accuracy and range precision. Furthermore, experimental results from inspection of tunnels, buildings, monuments and industrial environments are presented. The paper concludes by summarizing results and gives a short outlook to future work.

Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Geels, Randall Scott

The theory, design, fabrication, and testing of vertical-cavity surface-emitting lasers (VCSELs) is explored in depth. The design of the distributed Bragg reflector (DBR) mirrors is thoroughly treated and both analytic and numerical approaches for computing the reflectivity are covered. The electrical properties of the DBR mirrors are also considered and graded interfaces are found to be critical in reducing the series voltage drop in the mirrors. Thickness variations due to growth rate uncertainties are considered and the permissible thickness inaccuracies are discussed. Layer thickness variations of several percent can be tolerated without large changes in the threshold current. The growth of VCSELs by molecular beam epitaxy (MBE) is described in detail as is the device processing technology for broad area as well as small area devices. Results from numerous devices are reported. Broad area in-plane lasers were used to characterize the material and determine the internal parameters. Broad area VCSELs were fabricated to determine the characteristics of the VCSEL cavity. Small area VCSELs were fabricated and extensively tested. Measured and derived parameters from small area devices include: threshold current (~0.7 mA), peak output power (>3 mW), maximum operation temperature (>110^ circC), output power at 100^ circC (~0.4 mW), and linewidth (85 MHz). The near field, far field, and polarization characteristics were also measured.

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficient blue emission of ytterbium-doped Sr5(PO4)3F under quasi-three-level intracavity pumping

NASA Astrophysics Data System (ADS)

Yang, Y.; Cao, G. H.

2012-02-01

We report an Yb:Sr5(PO4)3F (Yb:S-FAP) laser emitting at 985 nm intracavity pumped by a 912 nm diode-pumped Nd:GdVO4 laser. A 808 nm diode laser is used to pump the Nd:GdVO4 crystal emitting at 912 nm, and the Yb:S-FAP laser emitting at 985 nm intracavity pumped at 912 nm. With incident pump power of 17.5 W, intracavity second harmonic generation has been demonstrated with a power of 131 mW at 492.5 nm by using a LBO nonlinear crystal.

Physical basics of endovenous laser treatment and potential of innovative developments

NASA Astrophysics Data System (ADS)

Sroka, R.; Esipova, A.; Schmedt, C. G.

2017-04-01

During the last decade, endoluminal laser treatment (ELT) has been rapidly developing. Protocols using radially emitting ELT fibres in combination with infrared laser light show clinical advantages over the bare-fibre technique and near infrared irradiation. Although the clinical response rate is high several side effects occurred. Innovative light application systems and feedback systems are therefore being under development to potentially improve the clinical situation. The irradiation patterns of bare fibres and radially emitting 1-ring and 2-ring fibres were measured using the goniometer technique. The device robustness, device handling and tissue effects were investigated using the established ox-foot-model. Furthermore, temperature measurements were performed either intraluminal within the irradiation field using a tiny temperature sensor and on the outer surface of the vessel wall by means of a thermocamera. All fibres showed sufficient mechanical and thermal robustness. The destruction threshold is far beyond the light powers employed during clinical application. The 1-ring fibre showed very high peak temperatures for a short time, while the 2-ring-fibre hold its somewhat lower maximum temperature for a longer time. Both forms of energy application resulted in the desired shrinkage and destruction effect. In this regard, the handling of the 2-ring fibre appears subjectively more convenient with reduced sticking-related problems. Acute tissue effects could be investigated to improve the understanding especially of the interaction between handling, maneuvers and tissue effects. The 2-ring radially emitting fibre in combination with IR laser light and specific application parameters showed improved handling and safety features.

Subsurface plasma in beam of continuous CO2-laser

NASA Astrophysics Data System (ADS)

Danytsikov, Y. V.; Dymshakov, V. A.; Lebedev, F. V.; Pismennyy, V. D.; Ryazanov, A. V.

1986-03-01

Experiments performed at the Institute of Atomic Energy established the conditions for formation of subsurface plasma in substances by laser radiation and its characteristics. A quasi-continuous CO2 laser emitting square pulses of 0.1 to 1.0 ms duration and 1 to 10 kW power as well as a continuous CO2 laser served as radiation sources. Radiation was focused on spots 0.1 to 0.5 mm in diameter and maintained at levels ensuring constant power density during the interaction time, while the temperature of the target surface was measured continuously. Metals, graphite and dielectric materials were tested with laser action taking place in air N2 + O2 mixtures, Ar or He atmosphere under pressures of 0.01 to 1.0 atm. Data on radiation intensity thresholds for evaporation and plasma formation were obtained. On the basis of these thresholds, combined with data on energy balance and the temperature profile in plasma layers, a universal state diagram was constructed for subsurface plasma with nonquantified surface temperature and radiation intensity coordinates.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, C.; Margalith, T.; Ng, T. K.; DenBaars, S. P.; Ooi, B. S.; Speck, J. S.; Nakamura, S.

2016-02-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 μm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 μW with a threshold current density of ~3.5 kA/cm2, while the ITO VCSELs show peak powers of ~80 μW and threshold current densities of ~7 kA/cm2.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao; Curwen, Christopher; Chen, Daguan

A longstanding challenge for terahertz quantum-cascade (QC) lasers is achieving both a high power and high-quality beam pattern, this is due in part due to their use of sub-wavelength metallic waveguides. Recently, the vertical-external-cavity surface-emitting laser (VECSEL) concept was demonstrated for the first time in the terahertz range and for a QC-laser. This is enabled by the development of an amplifying metasurface reflector capable of coupling incident free-space THz radiation to the QC-laser material such that it is amplified and re-radiated. The THz metasurface QC-VECSEL initiates a new approach for making QC-lasers with high power and excellent beam pattern. Furthermore,more » the ability to engineer the electromagnetic phase, amplitude, and polarization response of the metasurface enables lasers with new functionality. Our article provides an overview of the fundamental theory, design considerations, and recent results for high-performance THz QC-VECSELs.« less

Terahertz metasurface quantum-cascade VECSELs: theory and performance

DOE PAGES

Xu, Luyao; Curwen, Christopher; Chen, Daguan; ...

2017-04-12

A longstanding challenge for terahertz quantum-cascade (QC) lasers is achieving both a high power and high-quality beam pattern, this is due in part due to their use of sub-wavelength metallic waveguides. Recently, the vertical-external-cavity surface-emitting laser (VECSEL) concept was demonstrated for the first time in the terahertz range and for a QC-laser. This is enabled by the development of an amplifying metasurface reflector capable of coupling incident free-space THz radiation to the QC-laser material such that it is amplified and re-radiated. The THz metasurface QC-VECSEL initiates a new approach for making QC-lasers with high power and excellent beam pattern. Furthermore,more » the ability to engineer the electromagnetic phase, amplitude, and polarization response of the metasurface enables lasers with new functionality. Our article provides an overview of the fundamental theory, design considerations, and recent results for high-performance THz QC-VECSELs.« less

Advances in tunable diode laser technology

NASA Technical Reports Server (NTRS)

Lo, W.

1980-01-01

The improvement of long-term reliability, the purification of mode properties, and the achievement of higher-temperature operation were examined. In reliability studies a slow increase in contact resistance during room temperature storage for lasers fabricated with In-Au or In-Pt contacts was observed. This increase is actually caused by the diffusion of In into the surface layer of laser crystals. By using a three layered structure of In-Au-Pt or In-Pt-Au, this mode of degradation was reduced. In characterizing the mode properties, it was found that the lasers emit in a highly localized, filamentary manner. For widestripe lasers the emission occurs near the corners of the junction. In order to achieve single-mode operation, stripe widths on the order of 8-10 micrometers are needed. Also, it was found that room temperature electroluminescence is possible near 4.6 micrometers.

LED pumped Nd:YAG laser development program

NASA Technical Reports Server (NTRS)

Farmer, G. I.; Kiang, Y. C.; Lynch, R. J.

1973-01-01

The results of a development program for light emitting diode (LED) pumped Nd:YAG lasers are described. An index matching method to increase the coupling efficiency of the laser is described. A solid glass half-cylinder of 5.0 by 5.6 centimeters was used for index matching and also as a pumping cavity reflector. The laser rods were 1.5 by 56 millimeters with dielectric coatings on both end surfaces. The interfaces between the diode array, glass cylinder, and laser rod were filled with viscous fluid of refractive index n = 1.55. Experiments performed with both the glass cylinder and a gold coated stainless steel reflector of the same dimensions under the same operating conditions indicate that the index matching cylinder gave 159 to 200 percent improvement of coupling efficiency over the metal reflector at various operating temperatures.

Comparative clinical study using laser and LED-therapy for orofacial pain relief: dentin hypersensitivity and cervicogenic headache

NASA Astrophysics Data System (ADS)

Lizarelli, Rosane F. Z.; Pizzo, Renata C. A.; Florez, Fernando L. E.; Grecco, Clovis; Speciali, Jose G.; Bagnato, Vanderlei S.

2015-06-01

Considering several clinical situations, low intensity laser therapy has been widely applied in pain relief or analgesia mechanism. With the advent of new LED-based (light emitting diode) light sources, the need of further clinical experiments aiming to compare the effectiveness among them is paramount. The LED system therapeutic use can be denominated as LEDT - Light Emitting Diode Therapy. This study proposed two clinical evaluations of pain relief effect: to dentin hypersensitivity and to cervicogenic headache using different sources of lasers (low and high intensity) and light emitting diodes (LEDs), one emitting at the spectral band of red (630+/- 5nm) and the other one at infrared band (880+/- 5nm). Two different clinical studies were performed and presented interesting results. Considering dentin hypersensitivity, red and infrared led were so effective than the control group (high intensity laser system); by the other side, considering cervicogenic headache, control group (infrared laser) was the best treatment in comparison to red and infrared led system.

Ultra-low noise dual-frequency VECSEL at telecom wavelength using fully correlated pumping.

PubMed

Liu, Hui; Gredat, Gregory; De, Syamsundar; Fsaifes, Ihsan; Ly, Aliou; Vatré, Rémy; Baili, Ghaya; Bouchoule, Sophie; Goldfarb, Fabienne; Bretenaker, Fabien

2018-04-15

An ultra-low intensity and beatnote phase noise dual-frequency vertical-external-cavity surface-emitting laser is built at telecom wavelength. The pump laser is realized by polarization combining two single-mode fibered laser diodes in a single-mode fiber, leading to a 100% in-phase correlation of the pump noises for the two modes. The relative intensity noise is lower than -140  dB/Hz, and the beatnote phase noise is suppressed by 30 dB, getting close to the spontaneous emission limit. The role of the imperfect cancellation of the thermal effect resulting from unbalanced pumping of the two modes in the residual phase noise is evidenced.

A hybrid CATV/16-QAM-OFDM visible laser light communication system

NASA Astrophysics Data System (ADS)

Lin, Chun-Yu; Li, Chung-Yi; Lu, Hai-Han; Chen, Chia-Yi; Jhang, Tai-Wei; Ruan, Sheng-Siang; Wu, Kuan-Hung

2014-10-01

A visible laser light communication (VLLC) system employing a vertical cavity surface emitting laser and spatial light modulator with hybrid CATV/16-QAM-OFDM modulating signals over a 5 m free-space link is proposed and demonstrated. With the assistance of a push-pull scheme, low-noise amplifier, and equalizer, good performances of composite second-order and composite triple beat are obtained, accompanied by an acceptable carrier-to-noise ratio performance for a CATV signal, and a low bit error rate value and clear constellation map are achieved for a 16-QAM-OFDM signal. Such a hybrid CATV/16-QAM-OFDM VLLC system would be attractive for providing services including CATV, Internet and telecommunication services.

760 nm high-performance VCSEL growth and characterization

NASA Astrophysics Data System (ADS)

Rinaldi, Fernando; Ostermann, Johannes M.; Kroner, Andrea; Riedl, Michael C.; Michalzik, Rainer

2006-04-01

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

Application of a ring cavity surface emitting quantum cascade laser (RCSE-QCL) on the measurement of H₂S in a CH₄ matrix for process analytics.

PubMed

Moser, Harald; Genner, Andreas; Ofner, Johannes; Schwarzer, C; Strasser, Gottfried; Lendl, Bernhard

2016-03-21

The present work reports on the first application of a ring-cavity-surface-emitting quantum-cascade laser (RCSE-QCL) for sensitive gas measurements. RCSE-QCLs are promising candidates for optical gas-sensing due to their single-mode, mode-hop-free and narrow-band emission characteristics along with their broad spectral coverage. The time resolved down-chirp of the RCSE-QCL in the 1227-1236 cm^-1 (8.15-8.09 µm) spectral range was investigated using a step-scan FT-IR spectrometer (Bruker Vertex 80v) with 2 ns time and 0.1 cm^-1 spectral resolution. The pulse repetition rate was set between 20 and 200 kHz and the laser device was cooled to 15-17°C. Employing 300 ns pulses a spectrum of ~1.5 cm^-1 could be recorded. Under these laser operation conditions and a gas pressure of 1000 mbar a limit of detection (3σ) of 1.5 ppmv for hydrogen sulfide (H₂S) in nitrogen was achieved using a 100 m Herriott cell and a thermoelectric cooled MCT detector for absorption measurements. Using 3 µs long pulses enabled to further extend the spectral bandwidth to 8.5 cm^-1. Based on this increased spectral coverage and employing reduced pressure conditions (50 mbar) multiple peaks of the target analyte H₂S as well as methane (CH₄) could be examined within one single pulse.

Thermally stable surface-emitting tilted wave laser

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Kalosha, V. P.; Ledentsov, N.; Agustin, M.; Kropp, J. R.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu; Kulagina, M. M.; Zhukov, A. E.

2018-02-01

Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in-plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs-based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non-alloyed metal grid. Rectangular-shaped 400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of 70 μm. 7 μm-wide metal stripes serve as non-alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL-like mode at 854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field 10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of 840 nm at room temperature, emitting light at two symmetric lobes at tilt angles 40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of 1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in-plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM-polarized surface-trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L-I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

Innovative Facet Passivation for High-Brightness Laser Diodes

DTIC Science & Technology

2016-02-05

and anti-reflection (AR) coatings are deposited after cleaving. Edge- emitting laser diodes emit very high optical powers from small emission areas, as...SECURITY CLASSIFICATION OF: The objective of this effort is to increase the power of low fill-factor (20%) laser diode (LD) bars from the present...2012 16-Nov-2015 Approved for Public Release; Distribution Unlimited Final Report: Innovative Facet Passivation for High-Brightness Laser Diodes The

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

[Optic method of searching for acupuncture points and channels].

PubMed

Gertsik, G Ia; Zmievskoĭ, G N; Ivantsov, V I; Sang Min Li; Iu Byiung Kim; Gil Von Iun

2001-01-01

A procedure is proposed to search for acupuncture points and channels (APC) by space-sensitive recording of optical radiation diffusely reflected by surface (dermal and hypodermal) tissues of the body. For this purpose, the body surface is probed by low-intensity infrared radiation from a laser or noncoherent (light-emitting diodes) source by using a fiber-optic multichannel sensor. It is shown that it is most advisable to apply sources at wavelengths of 840-850 and 1260-1300 nm.

Phoenix's Laser Beam in Action on Mars

NASA Technical Reports Server (NTRS)

2008-01-01

[figure removed for brevity, see original site] Click on image to view the animation

The Surface Stereo Imager camera aboard NASA's Phoenix Mars Lander acquired a series of images of the laser beam in the Martian night sky. Bright spots in the beam are reflections from ice crystals in the low level ice-fog. The brighter area at the top of the beam is due to enhanced scattering of the laser light in a cloud. The Canadian-built lidar instrument emits pulses of laser light and records what is scattered back.

The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

Nondestructive inspection of aerospace composites by a fiber-coupled laser ultrasonics system

NASA Astrophysics Data System (ADS)

Vandenrijt, J.-F.; Languy, F.; Thizy, C.; Georges, M. P.

2017-06-01

Laser ultrasonics is a technique currently studied for nondestructive inspection of aerospace composite structures based on carbon fibers. It combines a pulsed laser impacting the surface generates an ultrasound inside the material, through the nondestructive thermoelastic effect. Second a detection interferometer probes the impacted point in order to measure the displacement of the surface resulting from the emitted ultrasound wave and the echo coming back from the different interfaces of the structure. Laser ultrasonics is of interest for inspecting complex shaped composites. We have studied the possibility of using frequency doubled YAG laser for the generation and which is fiber-coupled, together with a fibercoupled interferometric probe using a YAG laser in the NIR. Our final system is a lightweight probe attached to a robot arm and which is able to scan complex shapes. The performances of the system are compared for different wavelengths of generations. Also we have studied some experimental parameters of interest such as tolerance to angle and focus distance, and different geometries of generation beams. We show some examples of inspection of reference parts with known defects. In particular C-scans of curved composites structures are presented.

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-06-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-15

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θ{sub p}. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θ{sub p}. The maximum value of the cross-correlation coefficient achievedmore » is −0.99 with a zero time delay over a wide range of θ{sub p} beyond 65° with a poor synchronization dynamic at θ{sub p} less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θ{sub p}. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.« less

Non-equilibrium many-body influence on mode-locked Vertical External-cavity Surface-emitting Lasers

NASA Astrophysics Data System (ADS)

Kilen, Isak Ragnvald

Vertical external-cavity surface-emitting lasers are ideal testbeds for studying the influence of the non-equilibrium many-body dynamics on mode locking. As we will show in this thesis, ultra short pulse generation involves a marked departure from Fermi carrier distributions assumed in prior theoretical studies. A quantitative model of the mode locking dynamics is presented, where the semiconductor Bloch equations with Maxwell's equation are coupled, in order to study the influences of quantum well carrier scattering on mode locking dynamics. This is the first work where the full model is solved without adiabatically eliminating the microscopic polarizations. In many instances we find that higher order correlation contributions (e.g. polarization dephasing, carrier scattering, and screening) can be represented by rate models, with the effective rates extracted at the level of second Born-Markov approximations. In other circumstances, such as continuous wave multi-wavelength lasing, we are forced to fully include these higher correlation terms. In this thesis we identify the key contributors that control mode locking dynamics, the stability of single pulse mode-locking, and the influence of higher order correlation in sustaining multi-wavelength continuous wave operation.

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-03-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Forman, Charles A.; Lee, SeungGeun; Young, Erin C.; Kearns, Jared A.; Cohen, Daniel A.; Leonard, John T.; Margalith, Tal; DenBaars, Steven P.; Nakamura, Shuji

2018-03-01

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture, a tunnel junction intracavity contact, and a dual dielectric distributed Bragg reflector design. The reported VCSEL has 2 quantum wells, with a 14 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 23 λ total cavity thickness. The thermal performance was improved by increasing the cavity length and using Au-In solid-liquid interdiffusion bonding, which led to lasing under CW operation for over 20 min. Lasing wavelengths under pulsed operation were observed at 406 nm, 412 nm, and 419 nm. Only the latter two modes appeared under CW operation due to the redshifted gain at higher temperatures. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 140 μW and 700 μW, respectively. The fundamental transverse mode was observed without the presence of filamentary lasing. The thermal impedance was estimated to be ˜1400 °C/W for a 6 μm aperture 23 λ VCSEL.

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1993-12-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. Concentrtion was on epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer involves creating a nonuniform substrate surface temperature across the wafer during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate temperature. Growth is investigated with the use of a patterned spacer (either a Ga or Si substrate) placed in-between the substrate and its heater. The temperature distribution on such wafers is used to guide our experiments. A reflectivity measurement apparatus that is capable of mapping a 2 in. wafer with a 100 microns diameter resolution was built for diagnosing our wafers. In this first six-month report, our calculations, the various experimental results, and a discussion on future directions are presented.

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

PubMed

Zhao, Chao; Ng, Tien Khee; Prabaswara, Aditya; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D; Parbrook, Peter J; Bhattacharya, Pallab; Ooi, Boon S

2015-10-28

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

Calculating the radiation characteristics of accelerated electrons in laser-plasma interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X. F.; Graduate School of Engineering, Utsunomiya University, 7-1-2 Yohtoh, Utsunomiya 321-8585; Yu, Q.

2016-03-15

In this paper, we studied the characteristics of radiation emitted by electrons accelerated in a laser–plasma interaction by using the Lienard–Wiechert field. In the interaction of a laser pulse with a underdense plasma, electrons are accelerated by two mechanisms: direct laser acceleration (DLA) and laser wakefield acceleration (LWFA). At the beginning of the process, the DLA electrons emit most of the radiation, and the DLA electrons emit a much higher peak photon energy than the LWFA electrons. As the laser–plasma interaction progresses, the LWFA electrons become the major radiation emitter; however, even at this stage, the contribution from DLA electronsmore » is significant, especially to the peak photon energy.« less

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

NASA Astrophysics Data System (ADS)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Active laser radar (lidar) for measurement of corresponding height and reflectance images

NASA Astrophysics Data System (ADS)

Froehlich, Christoph; Mettenleiter, M.; Haertl, F.

1997-08-01

For the survey and inspection of environmental objects, a non-tactile, robust and precise imaging of height and depth is the basis sensor technology. For visual inspection,surface classification, and documentation purposes, however, additional information concerning reflectance of measured objects is necessary. High-speed acquisition of both geometric and visual information is achieved by means of an active laser radar, supporting consistent 3D height and 2D reflectance images. The laser radar is an optical-wavelength system, and is comparable to devices built by ERIM, Odetics, and Perceptron, measuring the range between sensor and target surfaces as well as the reflectance of the target surface, which corresponds to the magnitude of the back scattered laser energy. In contrast to these range sensing devices, the laser radar under consideration is designed for high speed and precise operation in both indoor and outdoor environments, emitting a minimum of near-IR laser energy. It integrates a laser range measurement system and a mechanical deflection system for 3D environmental measurements. This paper reports on design details of the laser radar for surface inspection tasks. It outlines the performance requirements and introduces the measurement principle. The hardware design, including the main modules, such as the laser head, the high frequency unit, the laser beam deflection system, and the digital signal processing unit are discussed.the signal processing unit consists of dedicated signal processors for real-time sensor data preprocessing as well as a sensor computer for high-level image analysis and feature extraction. The paper focuses on performance data of the system, including noise, drift over time, precision, and accuracy with measurements. It discuses the influences of ambient light, surface material of the target, and ambient temperature for range accuracy and range precision. Furthermore, experimental results from inspection of buildings, monuments and industrial environments are presented. The paper concludes by summarizing results achieved in industrial environments and gives a short outlook to future work.

Acoustic transient generation in pulsed holmium laser ablation under water

NASA Astrophysics Data System (ADS)

Asshauer, Thomas; Rink, Klaus; Delacretaz, Guy P.; Salathe, Rene-Paul; Gerber, Bruno E.; Frenz, Martin; Pratisto, Hans; Ith, Michael; Romano, Valerio; Weber, Heinz P.

1994-08-01

In this study the role of acoustical transients during pulsed holmium laser ablation is addressed. For this the collapse of cavitation bubbles generated by 2.12 micrometers Cr:Tm:Ho:YAG laser pulses delivered via a fiber in water is investigated. Multiple consecutive collapses of a single bubble generating acoustic transients are documented. Pulse durations are varied from 130 - 230 microsecond(s) and pulse energies from 20 - 800 mJ. Fiber diameters of 400 and 600 micrometers are used. The bubble collapse behavior is observed by time resolved fast flash photography with 1 microsecond(s) strobe lamp or 5 ns 1064 nm Nd:YAG laser illumination. A PVDF needle probe transducer is used to observe acoustic transients and measure their pressure amplitudes. Under certain conditions, at the end of the collapse phase the bubbles emit spherical acoustic transients of up to several hundred bars amplitude. After the first collapse up to two rebounds leading to further acoustic transient emissions are observed. Bubbles generated near a solid surface under water are attracted towards the surface during their development. The final phase of the collapse generating the acoustic transients takes place directly on the surface, exposing it to maximum pressure amplitudes. Our results indicate a possible mechanism of unwanted tissue damage during holmium laser application in a liquid environment as in arthroscopy or angioplasty that may set limits to the choice of laser pulse duration and energies.

Effects of blue diode laser (445 nm) and LED (430-480 nm) radiant heat treatments on dental glass ionomer restoratives

NASA Astrophysics Data System (ADS)

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2018-02-01

The purpose of this in vitro study was to evaluate the effect of two radiant heat treatments on water sorption, solubility and surface roughness of three conventional glass ionomer cements by using a blue diode laser (445 nm) and a light emitting diode (LED) unit (430-480 nm). Thirty disk-shaped specimens were prepared for each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: Group 1 was the control group, in Group 2 the specimens were irradiated for 60 s at the top surface using a LED light-curing unit and in Group 3 the specimens were irradiated for 60 s at the top surface using a blue light diode laser. Statistical analysis was performed using one-way ANOVA and Tukey post hoc tests at a level of significance of a = 0.05. Radiant heat treatments with both laser and LED devices significantly decreased water sorption and solubility (p < 0.05) of most of the tested GICs. Blue diode laser treatment was seemed to be more effective compared to LED treatment for some of the tested materials. There were no changes in surface roughness of the GICs after the treatments (p > 0.05). Among the tested materials there were differences in water sorption and solubility (p < 0.05) but not in surface roughness (p > 0.05). The use of the blue diode laser for this radiant heat treatment was harmless for the surface of the tested GICs and may be advantageous for the longevity of their restorations.

Decalin-assisted light emitting porous Si formation and its optical, surface and morphological properties

NASA Astrophysics Data System (ADS)

Karatutlu, Ali; Istengir, Sumeyra; Cosgun, Sedat; Seker, Isa; Unal, Bayram

2017-11-01

In this research paper, light emitting porous silicon (Lep-Si) samples were fabricated by a surfactant-mediated chemical stain etching solution in order to form homogenous luminescent nanostructures at room temperature. As an industrially important solvent, decalin (decahydronaphtalene) was used as a surfactant in the HF/HNO3 solutions in order to control the etching process. Morphological, surface and optical properties of the Lep-Si samples were examined using atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL) spectroscopy, and laser scanning confocal microscopy (LSCM) techniques. These characterization techniques were correlated with the various etching times including depth dependent luminescence profiles for the first time. We report the optimum conditions for production of the most efficient Lep-Si using decalin (decahydronaphtalene) and possible structural origins of light emission using the depth dependent luminescence measurements.

Semiconductor light sources for near- and mid-infrared spectral ranges

NASA Astrophysics Data System (ADS)

Karachinsky, L. Ya; Babichev, A. V.; Gladyshev, A. G.; Denisov, D. V.; Filimonov, A. V.; Novikov, I. I.; Egorov, A. Yu

2017-11-01

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

Communication using VCSEL laser array

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

2008-01-01

Ultrafast directional beam switching, using coupled vertical cavity surface emitting lasers (VCSELs) is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and directional beam switching with angular differences of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches. A Mach-Zehnder interferometer, a Fabry-Perot etalon, or a semiconductor-based electro-absorption transmission channel, among others, can be used as a light modulator.

Multiharmonic Frequency-Chirped Transducers for Surface-Acoustic-Wave Optomechanics

NASA Astrophysics Data System (ADS)

Weiß, Matthias; Hörner, Andreas L.; Zallo, Eugenio; Atkinson, Paola; Rastelli, Armando; Schmidt, Oliver G.; Wixforth, Achim; Krenner, Hubert J.

2018-01-01

Wide-passband interdigital transducers are employed to establish a stable phase lock between a train of laser pulses emitted by a mode-locked laser and a surface acoustic wave generated electrically by the transducer. The transducer design is based on a multiharmonic split-finger architecture for the excitation of a fundamental surface acoustic wave and a discrete number of its overtones. Simply by introducing a variation of the transducer's periodicity p , a frequency chirp is added. This combination results in wide frequency bands for each harmonic. The transducer's conversion efficiency from the electrical to the acoustic domain is characterized optomechanically using single quantum dots acting as nanoscale pressure sensors. The ability to generate surface acoustic waves over a wide band of frequencies enables advanced acousto-optic spectroscopy using mode-locked lasers with fixed repetition rate. Stable phase locking between the electrically generated acoustic wave and the train of laser pulses is confirmed by performing stroboscopic spectroscopy on a single quantum dot at a frequency of 320 MHz. Finally, the dynamic spectral modulation of the quantum dot is directly monitored in the time domain combining stable phase-locked optical excitation and time-correlated single-photon counting. The demonstrated scheme will be particularly useful for the experimental implementation of surface-acoustic-wave-driven quantum gates of optically addressable qubits or collective quantum states or for multicomponent Fourier synthesis of tailored nanomechanical waveforms.

Laser optomechanics

NASA Astrophysics Data System (ADS)

Yang, Weijian; Adair Gerke, Stephen; Wei Ng, Kar; Rao, Yi; Chase, Christopher; Chang-Hasnain, Connie J.

2015-09-01

Cavity optomechanics explores the interaction between optical field and mechanical motion. So far, this interaction has relied on the detuning between a passive optical resonator and an external pump laser. Here, we report a new scheme with mutual coupling between a mechanical oscillator supporting the mirror of a laser and the optical field generated by the laser itself. The optically active cavity greatly enhances the light-matter energy transfer. In this work, we use an electrically-pumped vertical-cavity surface-emitting laser (VCSEL) with an ultra-light-weight (130 pg) high-contrast-grating (HCG) mirror, whose reflectivity spectrum is designed to facilitate strong optomechanical coupling, to demonstrate optomechanically-induced regenerative oscillation of the laser optomechanical cavity. We observe >550 nm self-oscillation amplitude of the micromechanical oscillator, two to three orders of magnitude larger than typical, and correspondingly a 23 nm laser wavelength sweep. In addition to its immediate applications as a high-speed wavelength-swept source, this scheme also offers a new approach for integrated on-chip sensors.

Phase-locked laser array through global antenna mutual coupling

DOE PAGES

Kao, Tsung -Yu; Reno, John L.; Hu, Qing

2016-01-01

Here, phase locking of an array of lasers is a highly effective way in beam shaping, to increase the output power, and to reduce lasing threshold. In this work, we present a novel phase-locking mechanism based on "antenna mutual coupling" wherein laser elements interact through far-field radiations with definite phase relations. This allows long-range global coupling among array elements to achieve robust 2-dimensional phase-locked laser array. The new scheme is ideal for lasers with deep sub-wavelength confined cavity such as nanolasers, where the divergent beam pattern could be used to form strong coupling among elements in the array. We experimentallymore » demonstrated such a scheme using sub-wavelength short-cavity surface-emitting lasers at terahertz frequency. More than 37 laser elements are phase-locked to each other, delivering up to 6.5 mW single-mode radiations at ~3 terahertz, with maximum 450-mW/A slope efficiency and near diffraction limit beam divergence.« less

Photoablation of the cornea with a Q-switched Er:YAG laser

NASA Astrophysics Data System (ADS)

Lubatschowski, Holger; Hetzel, U.; Kermani, Omid; Ziolek, Carsten; Drommer, Wolfgang; Ertmer, Wolfgang

1997-12-01

In this study the ablation characteristics and the wound healing process of rabbit cornea irradiated with a Q- switched Er:YAG laser was evaluated. The laser, emitting at 2.94 micrometers wavelength, has a pulse width of 100 ns. The spot size on the corneal surface was 1 mm in diameter at a fluence of 750 mJ/cm2. The laser beam was applied by a `flying spot' mode, performing refractive ablations of -7 to -8 dpt. As a biological model, the corneas of 9 rabbits were irradiated. The post-treatment follow-up was as long as 39 days. The treated corneas were investigated by light and electron microscopy. The wound healing on rabbit cornea of the Q-switched Er:YAG laser radiation in corneal tissue processing resembles to what is known from ArF- excimer laser application. To shorten the pulse width by means of Q-switching is one major key to the successful application of the Er:YAG laser for PRK.

Electronic properties of solids excited with intermediate laser power densities

NASA Astrophysics Data System (ADS)

Sirotti, Fausto; Tempo Beamline Team

Intermediate laser power density up to about 100 GW/cm2 is below the surface damage threshold is currently used to induce modification in the physical properties on short time scales. The absorption of a short laser pulse induces non-equilibrium electronic distributions followed by lattice-mediated equilibrium taking place only in the picosecond range. The role of the hot electrons is particularly important in several domains as for example fast magnetization and demagnetization processes, laser induced phase transitions, charge density waves. Angular resolved photoelectron spectroscopy measuring directly energy and momentum of electrons is the most adapted tool to study the electronic excitations at short time scales during and after fast laser excitations. The main technical problem is the space charge created by the pumping laser pulse. I will present angular resolved multiphoton photoemission results obtained with 800 nm laser pulses showing how space charge electrons emitted during fast demagnetization processes can be measured. Unable enter Affiliation: CNRS-SOLEIL Synchrotron L'Orme des Merisiers , Saint Aubin 91192 Gif sur Yvette France.

Enhanced relativistic harmonics by electron nanobunching

NASA Astrophysics Data System (ADS)

an der Brügge, D.; Pukhov, A.

2010-03-01

It is shown that when a few-cycle, relativistically intense, p-polarized laser pulse is obliquely incident on overdense plasma, the surface electrons may form ultrathin, highly compressed layers with a width of a few nanometers. These electron "nanobunches" emit synchrotron radiation coherently. We calculate the one-dimensional synchrotron spectrum analytically and obtain a slowly decaying power law with an exponent of 4/3 or 6/5. This is much flatter than the 8/3 power of the Baeva-Gordienko-Pukhov spectrum, produced by a relativistically oscillating bulk skin layer. The synchrotron spectrum cutoff frequency is defined either by the electron relativistic γ-factor or by the thickness of the emitting layer. In the numerically demonstrated, locally optimal case, the radiation is emitted in the form of a single attosecond pulse, which contains almost the entire energy of the full optical cycle.

Evaluation of Ho:KPb2Cl5 as a Diode-Pumpable Mid-IR Laser Material

DTIC Science & Technology

2016-09-01

is the decay of the upper laser level without emitting light , due to the simultaneous emission of enough lattice vibrational quanta (phonons) to...have an energy level spacing that can result in emission at the desired laser wavelength, and that state must emit light efficiently. It is also...extremely desirable that it absorb light in the wavelength region where laser diodes operate most efficiently, approximately 800–1000 nm. This enables

Carrier-envelope phase control of femtosecond mode-locked lasers and direct optical frequency synthesis

PubMed

Jones; Diddams; Ranka; Stentz; Windeler; Hall; Cundiff

2000-04-28

We stabilized the carrier-envelope phase of the pulses emitted by a femtosecond mode-locked laser by using the powerful tools of frequency-domain laser stabilization. We confirmed control of the pulse-to-pulse carrier-envelope phase using temporal cross correlation. This phase stabilization locks the absolute frequencies emitted by the laser, which we used to perform absolute optical frequency measurements that were directly referenced to a stable microwave clock.

Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor

NASA Astrophysics Data System (ADS)

Parashurama, Natesh; O'Sullivan, Thomas D.; De La Zerda, Adam; El Kalassi, Pascale; Cho, Seongjae; Liu, Hongguang; Teed, Robert; Levy, Hart; Rosenberg, Jarrett; Cheng, Zhen; Levi, Ofer; Harris, James S.; Gambhir, Sanjiv S.

2012-11-01

Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets αVβ3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications.

Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor

PubMed Central

Parashurama, Natesh; O’Sullivan, Thomas D.; De La Zerda, Adam; El Kalassi, Pascale; Cho, Seongjae; Liu, Hongguang; Teed, Robert; Levy, Hart; Rosenberg, Jarrett; Cheng, Zhen; Levi, Ofer; Harris, James S.

2012-01-01

Abstract. Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets αVβ3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications. PMID:23123976

Additional compound semiconductor nanowires for photonics

NASA Astrophysics Data System (ADS)

Ishikawa, F.

2016-02-01

GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

Utilization of the UV laser with picosecond pulses for the formation of surface microstructures on elastomeric plastics

NASA Astrophysics Data System (ADS)

Antoszewski, B.; Tofil, S.; Scendo, M.; Tarelnik, W.

2017-08-01

Elastomeric plastics belong to a wide range of polymeric materials with special properties. They are used as construction material for seals and other components in many branches of industry and, in particular, in the biomedical industry, mechatronics, electronics and chemical equipment. The micromachining of surfaces of these materials can be used to build micro-flow, insulating, dispensing systems and chemical and biological reactors. The paper presents results of research on the effects of micro-machining of selected elastomeric plastics using a UV laser emitting picosecond pulses. The authors see the prospective application of the developed technology in the sealing technique in particular to shaping the sealing pieces co-operating with the surface of the element. The result of the study is meant to show parameters of the UV laser’s performance when producing typical components such as grooves, recesses for optimum ablation in terms of quality and productivity.

2 micron femtosecond fiber laser

DOEpatents

Liu, Jian; Wan, Peng; Yang, Lihmei

2014-07-29

Methods and systems for generating femtosecond fiber laser pulses are disclose, including generating a signal laser pulse from a seed laser oscillator; using a first amplifier stage comprising an input and an output, wherein the signal laser pulse is coupled into the input of the first stage amplifier and the output of the first amplifier stage emits an amplified and stretched signal laser pulse; using an amplifier chain comprising an input and an output, wherein the amplified and stretched signal laser pulse from the output of the first amplifier stage is coupled into the input of the amplifier chain and the output of the amplifier chain emits a further amplified, stretched signal laser pulse. Other embodiments are described and claimed.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Systems and methods for imaging using radiation from laser produced plasmas

DOEpatents

Renard-Le Galloudec, Nathalie; Cowan, Thomas E.; Sentoku, Yasuhiko; Rassuchine, Jennifer

2009-06-30

In particular embodiments, the present disclosure provides systems and methods for imaging a subject using radiation emitted from a laser produced plasma generating by irradiating a target with a laser. In particular examples, the target includes at least one radiation enhancing component, such as a fluor, cap, or wire. In further examples, the target has a metal layer and an internal surface defining an internal apex, the internal apex of less than about 15 .mu.m, such as less than about 1 .mu.m. The targets may take a variety of shapes, including cones, pyramids, and hemispheres. Certain aspects of the present disclosure provide improved imaging of a subject, such as improved medical images of a radiation dose than typical conventional methods and systems.

Scanning microarray slides.

PubMed

Ares, Manuel

2014-02-01

Here we describe some practical concerns surrounding the scanning of microarray slides that have been hybridized with fluorescent dyes. We use a laser scanner that has two lasers, each set to excite a different fluor, and separate detectors to capture emission from each fluor. The laser passes over an address (position on the scanned surface) and the detectors capture photons emitted from each address. Two superimposed image files are written that carry intensities for each channel for each pixel of the image scan. These are the raw data. Image analysis software is used to identify and summarize the intensities of the pixels that make up each spot. After comparison to background pixels, the processed intensity levels representing the gene expression measurements are associated with the identity of each spot.

Scanned-wavelength diode laser sensors for harsh environments

NASA Astrophysics Data System (ADS)

Jeffries, Jay B.; Sanders, Scott T.; Zhou, Xin; Ma, Lin; Mattison, Daniel W.; Hanson, Ronald K.

2002-09-01

Diode laser absorption offers the possibility of high-speed, robust, and rugged sensors for a wide variety of practical applications. Pressure broadening complicates absorption measurements of gas temperature and species concentrations in high-pressure, high-temperature practical environments. More agile wavelength scanning can enable measurements of temperature and species concentrations in flames and engines as demonstrated by example measurements using wavelength scanning of a single DFB in laboratory flames or a vertical cavity surface emitting laser (VCSEL) in a pulse detonation engine environment. Although the blending of multiple transitions by pressure broadening complicates the atmospheric pressure spectrum of C2H4 fuel, a scanned wavelength strategy enables quantitative measurement of fuel/oxidizer stoichiometry. Wavelength-agile scanning techniques enable high-speed measurements in these harsh environments.

Fundamentals of metasurface lasers based on resonant dark states

NASA Astrophysics Data System (ADS)

Droulias, Sotiris; Jain, Aditya; Koschny, Thomas; Soukoulis, Costas M.

2017-10-01

Recently, our group proposed a metamaterial laser design based on explicitly coupled dark resonant states in low-loss dielectrics, which conceptually separates the gain-coupled resonant photonic state responsible for macroscopic stimulated emission from the coupling to specific free-space propagating modes, allowing independent adjustment of the lasing state and its coherent radiation output. Due to this functionality, it is now possible to make lasers that can overcome the trade-off between system dimensions and Q factor, especially for surface emitting lasers with deeply subwavelength thickness. Here, we give a detailed discussion of the key functionality and benefits of this design, such as radiation damping tunability, directionality, subwavelength integration, and simple layer-by-layer fabrication. We examine in detail the fundamental design tradeoffs that establish the principle of operation and must be taken into account and give guidance for realistic implementations.

Surgical tool alignment guidance by drawing two cross-sectional laser-beam planes.

PubMed

Nakajima, Yoshikazu; Dohi, Takeyoshi; Sasama, Toshihiko; Momoi, Yasuyuki; Sugano, Nobuhiko; Tamura, Yuichi; Lim, Sung-hwan; Sakuma, Ichiro; Mitsuishi, Mamoru; Koyama, Tsuyoshi; Yonenobu, Kazuo; Ohashi, Satoru; Bessho, Masahiko; Ohnishi, Isao

2013-06-01

Conventional surgical navigation requires for surgeons to move their sight and conscious off the surgical field when checking surgical tool's positions shown on the display panel. Since that takes high risks of surgical exposure possibilities to the patient's body, we propose a novel method for guiding surgical tool position and orientation directly in the surgical field by a laser beam. In our navigation procedure, two cross-sectional planar laser beams are emitted from the two laser devices attached onto both sides of an optical localizer, and show surgical tool's entry position on the patient's body surface and its orientation on the side face of the surgical tool. In the experiments, our method gave the surgeons precise and accurate surgical tool adjusting and showed the feasibility to apply to both of open and percutaneous surgeries.

Photonic quasi-crystal terahertz lasers

PubMed Central

Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles

2014-01-01

Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of ‘defects’, which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1–0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum. PMID:25523102

Photonic quasi-crystal terahertz lasers

NASA Astrophysics Data System (ADS)

Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles

2014-12-01

Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of ‘defects’, which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1-0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum.

Photonic quasi-crystal terahertz lasers.

PubMed

Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H; Davies, A Giles

2014-12-19

Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of 'defects', which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1-0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum.

Terahertz Radiation from Laser Created Plasma by Applying a Transverse Static Electric Field

NASA Astrophysics Data System (ADS)

Fukuda, Takuya; Katahira, Koji; Yugami, Noboru; Sentoku, Yasuhiko; Sakagami, Hitoshi; Nagatomo, Hideo

2016-10-01

Terahertz (THz) radiation, which is emitted in narrow cone in the forward direction from laser created plasma has been observed by N.Yugami et al.. Additionally, Löffler et al. have observed that a significantly increased THz emission intensity in the forward direction when the transverse static electric field is applied to the plasma. The purpose of our study is to derive the mechanism of the THz radiation from laser created plasma by applying the transverse static electric field. To study the radiation mechanism, we conducted 2D-PIC simulation. With the static electric field of 10 kV/cm and gas density of 1020 cm-3, we obtain 1.2 THz single cycle pulse radiation, whose intensity is 1.3 ×105 W/cm2. The magnetic field called ``picket fence mode'' is generated in the laser created plasma. At the boundary surface between the plasma and vacuum, the magnetic field is canceled because eddy current flows. We conclude that the temporal behavior of the magnetic field at the boundary surface radiates the THz wave.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

Dependence of absolute photon flux on infrared absorbance alteration and surface roughness on photoresist polymers irradiated with vacuum ultraviolet photons emitted from HBr plasma

NASA Astrophysics Data System (ADS)

Zhang, Yan; Takeuchi, Takuya; Ishikawa, Kenji; Hayashi, Toshio; Takeda, Keigo; Sekine, Makoto; Hori, Masaru

2017-12-01

The absolute fluxes of vacuum ultraviolet (VUV) photons emitted from HBr plasma were analyzed and the effects of VUV photons on a photoresist polymer in ArF-excimer-laser (193 nm) lithography were quantitatively investigated on the basis of the infrared spectra attributed to the C=O region. The spectral peak intensity assigned to the methacrylic acid (MAA) in the photoresist drastically decreased owing to the loss of this monomer caused by the irradiation of VUV photons at dosages below 16 × 1016 photons/cm2. X-ray photoelectron spectroscopy observation showed that the removed monomer moved to the surface and generated volatile products that induced a decrease in film thickness. As a consequence, the surface became rough during the early-stage irradiation at dosages lower than 16 × 1016 photons/cm2 owing to the monomer loss of MAA with volatile product formation and subsequent cross-linking reactions.

Cutting efficiency of a mid-infrared laser on human enamel.

PubMed

Levy, G; Koubi, G F; Miserendino, L J

1998-02-01

In this study, the cutting ability of a newly developed dental laser was compared with a dental high-speed handpiece and rotary bur for removal of enamel. Measurements of the volume of tissue removed, energy emitted, and time of exposure were used to quantify the ablation rate (rate of tissue removal) for each test group and compared. Cutting efficiency (mm3/s) of the laser was calculated based on the mean volume of tissue removed per pulse (mm3/pulse) and unit energy expended (mm3/J) over the range of applied powers (2, 4, 6, and 8 W). The specimens were then examined by light microscopy and scanning electron micrographs for qualitative analysis of the amount of remaining debris and the presence of the smear layer on the prepared enamel surface. Calculations of the cutting efficiency of the laser over the range of powers tested revealed a linear relationship with the level of applied power. The maximum average rate of tissue removal by the laser was 0.256 mm3/s at 8 W, compared with 0.945 mm3/s by the dental handpiece. Light microscopy and scanning electron micrograph examinations revealed a reduction in the amount of remaining debris and smear layer in the laser-prepared enamel surfaces, compared with the conventional method. Based on the results of this study, the cutting efficiency of the high-speed handpiece and dental bur was 3.7 times greater than the laser over the range of powers tested, but the laser appeared to create a cleaner enamel surface with minimal thermal damage. Further modifications of the laser system are suggested for improvement of laser cutting efficiency.

FIBER AND INTEGRATED OPTICS, LASER APPLICATIONS, AND OTHER PROBLEMS IN QUANTUM ELECTRONICS: Spectrometer based on injection lasers emitting near-infrared radiation

NASA Astrophysics Data System (ADS)

Avetisov, V. G.; Kosichkin, Yu V.; Malakhova, V. I.; Merkulov, A. V.; Nadezhdinskiĭ, A. I.; Paleĭ, S. L.; Khusnutdinov, A. N.; Yakubovich, S. D.

1989-04-01

A two-beam spectrometer utilizing injection lasers emitting in the near infrared was constructed. The spectrometer utilizes rapid scanning of the laser emission frequency followed by recording with an analog-digital converter. The spectrometer parameters are as follows: a spectral resolution of at least 2 × 10 -3 cm-1, a response time 50 ns, and a detectivity amounting to 0.0003% of the incident power carried by one pulse.

Improve the material absorption of light and enhance the laser tube bending process utilizing laser softening heat treatment

NASA Astrophysics Data System (ADS)

Imhan, Khalil Ibraheem; Baharudin, B. T. H. T.; Zakaria, Azmi; Ismail, Mohd Idris Shah B.; Alsabti, Naseer Mahdi Hadi; Ahmad, Ahmad Kamal

2018-02-01

Laser forming is a flexible control process that has a wide spectrum of applications; particularly, laser tube bending. It offers the perfect solution for many industrial fields, such as aerospace, engines, heat exchangers, and air conditioners. A high power pulsed Nd-YAG laser with a maximum average power of 300 W emitting at 1064 nm and fiber-coupled is used to irradiate stainless steel 304 (SS304) tubes of 12.7 mm diameter, 0.6 mm thickness and 70 mm length. Moreover, a motorized rotation stage with a computer controller is employed to hold and rotate the tube. In this paper, an experimental investigation is carried out to improve the laser tube bending process by enhancing the absorption coefficient of the material and the mechanical formability using laser softening heat treatment. The material surface is coated with an oxidization layer; hence, the material absorption of laser light is increased and the temperature rapidly rises. The processing speed is enhanced and the output bending angle is increased to 1.9° with an increment of 70% after the laser softening heat treatment.

Laboratory and airborne techniques for measuring fluoresence of natural surfaces

NASA Technical Reports Server (NTRS)

Stoertz, G. E.; Hemphill, W. R.

1972-01-01

Techniques are described for obtaining fluorescence spectra from samples of natural surfaces that can be used to predict spectral regions in which these surfaces would emit solar-stimulated or laser-stimulated fluorescence detectable by remote sensor. Scattered or reflected stray light caused large errors in spectrofluorometer analysis or natural sample surfaces. Most spurious light components can be eliminated by recording successive fluorescence spectra for each sample, using identical instrument settings, first with an appropriate glass or gelatin filter on the excitation side of the sample, and subsequently with the same filter on the emission side of the sample. This technique appears more accurate than any alternative technique for testing the fluorescence of natural surfaces.

Comparative study of the thermal effects of four semiconductor lasers on the enamel and pulp chamber of a human tooth.

PubMed

Arrastia, A M; Machida, T; Smith, P W; Matsumoto, K

1994-01-01

An in vitro thermometric study was conducted on various GaAlAs semiconductor lasers emitting at wavelengths between 750 nm and 905 nm, to verify whether these lasers produce significant heating during application to tooth structure. Measurements were conducted in vitro, using a thermal camera and a thermocouple during a 60, 120, and 180 s laser exposure at energy densities between 1.5 and 2,400 J/cm2. Mean temperature changes on surface enamel were statistically significant in all groups at P < or = .05 and P < or = .01. The higher the energy density applied to a surface area, the greater the temperature rise observed using the same spot size, operation mode, and wavelength. Intrapulpal temperature elevations measured > or = 3 degrees C. An in vivo study was also conducted to determine whether perceptible stimuli are experienced by patients during this time of laser treatment and to verify results of the in vitro study. The results did not conform well with the in vitro study because of uncontrollable variables. None of the patients who received irradiation treatment described any perceptible stimuli.

The effect of MLS laser radiation on cell lipid membrane.

PubMed

Pasternak, Kamila; Wróbel, Dominika; Nowacka, Olga; Pieszyński, Ireneusz; Bryszewska, Maria; Kujawa, Jolanta

2018-03-14

Authors of numerous publications have proved the therapeutic effect of laser irradiation on biological material, but the mechanisms at cellular and subcellular level are not yet well understood. The aim of this study was to assess the effect of laser radiation emitted by the MLS M1 system (Multiwave Locked System) at two wavelengths (808 nm continuous and 905 nm pulsed) on the stability and fluidity of liposomes with a lipid composition similar to that of human erythrocyte membrane or made of phosphatidylocholine. Liposomes were exposed to low-energy laser radiation at surface densities 195 mW/cm² (frequency 1,000 Hz) and 230 mW/cm² (frequency 2,000 Hz). Different doses of radiation energy in the range 0-15 J were applied. The surface energy density was within the range 0.46 - 4.9 J/cm ². The fluidity and stability of liposomes subjected to such irradiation changed depending on the parameters of radiation used. Since MLS M1 laser radiation, depending on the parameters used, affects fluidity and stability of liposomes with the lipid content similar to erythrocyte membrane, it may also cause structural and functional changes in cell membranes.

Recent advances in conjugated polymers for light emitting devices.

PubMed

Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

Recent Advances in Conjugated Polymers for Light Emitting Devices

PubMed Central

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

NASA Astrophysics Data System (ADS)

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

2014-11-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

PubMed

Palit, Sabarni; Kirch, Jeremy; Huang, Mengyuan; Mawst, Luke; Jokerst, Nan Marie

2010-10-15

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miah, M. J., E-mail: jarez.miah@tu-berlin.de; Posilovic, K.; Kalosha, V. P.

2014-10-13

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{supmore » −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.« less

Detection of calculus by laser-induced breakdown spectroscopy (LIBS) using an ultra-short pulse laser system (USPL)

NASA Astrophysics Data System (ADS)

Schelle, F.; Brede, O.; Krueger, S.; Oehme, B.; Dehn, C.; Frentzen, M.; Braun, A.

2011-03-01

The aim of this study was to assess the detection of calculus by Laser Induced Breakdown Spectroscopy (LIBS). The study was performed with an Nd:YVO4 laser, emitting pulses with a duration of 8 ps at a wavelength of 1064 nm. A repetition rate of 500 kHz at an average power of 5 W was used. Employing a focusing lense, intensities of the order of 1011 W/cm2 were reached on the tooth surface. These high intensities led to the generation of a plasma. The light emitted by the plasma was collimated into a fibre and then analyzed by an echelle spectroscope in the wavelength region from 220 nm - 900 nm. A total number of 15 freshly extracted teeth was used for this study. For each tooth the spectra of calculus and cementum were assessed separately. Comprising all single measurements median values were calculated for the whole spectrum, leading to two specific spectra, one for calculus and one for cementum. For further statistical analysis 28 areas of interest were defined as wavelength regions, in which the signal strength differed regarding the material. In 7 areas the intensity of the calculus spectrum differed statistically significant from the intensity of the cementum spectrum (p < 0.05). Thus it can be concluded that Laser Induced Breakdown Spectroscopy is well suited as method for a reliable diagnostic of calculus. Further studies are necessary to verify that LIBS is a minimally invasive method allowing a safe application in laser-guided dentistry.

Controllable laser thermal cleavage of sapphire wafers

NASA Astrophysics Data System (ADS)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Intensity noise properties of a compact laser device based on a miniaturized MOPA system for spectroscopic applications

NASA Astrophysics Data System (ADS)

Baumgärtner, S.; Juhl, S.; Opalevs, D.; Sahm, A.; Hofmann, J.; Leisching, P.; Paschke, K.

2018-02-01

We present a novel compact laser device based on a semiconductor master-oscillator power-amplifier (MOPA) emitting at 772 nm, suitable for quantum optic and spectroscopy. The optical performance of the laser device is characterized. For miniaturized lasers the thermal management is challenging, we therefore perform thermal simulations and measurements. The first demonstrator is emitting more than 3 W optical power with a linewidth below 2lMHz. Using this MOPA design also compact devices for quantum optics (e.g. rubidium atomic clock) and seed lasers for frequency conversion can be realized [1].

Determining the Carrier-Envelope Phase of Intense Few-Cycle Laser Pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mackenroth, F.; Di Piazza, A.; Keitel, C. H.

2010-08-06

The electromagnetic radiation emitted by an ultrarelativistic accelerated electron is extremely sensitive to the precise shape of the field driving the electron. We show that the angular distribution of the photons emitted by an electron via multiphoton Compton scattering off an intense (I>10{sup 20} W/cm{sup 2}), few-cycle laser pulse provides a direct way of determining the carrier-envelope phase of the driving laser field. Our calculations take into account exactly the laser field, include relativistic and quantum effects and are in principle applicable to presently available and future foreseen ultrastrong laser facilities.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

The efficacy of selective calculus ablation at 400 nm: comparison to conventional calculus removal methods

NASA Astrophysics Data System (ADS)

Schoenly, Joshua E.; Seka, Wolf; Romanos, Georgios; Rechmann, Peter

A desired outcome of scaling and root planing is the complete removal of calculus and infected root tissue and preservation of healthy cementum for rapid healing of periodontal tissues. Conventional periodontal treatments for calculus removal, such as hand instrument scaling and ultrasonic scaling, often deeply scrape the surface of the underlying hard tissue and may leave behind a smear layer. Pulsed lasers emitting at violet wavelengths (specifically, 380 to 400 nm) are a potential alternative treatment since they can selectively ablate dental calculus without ablating pristine hard tissue (i.e., enamel, cementum, and dentin). In this study, light and scanning electron microscopy are used to compare and contrast the efficacy of in vitro calculus removal for several conventional periodontal treatments (hand instruments, ultrasonic scaler, and Er:YAG laser) to calculus removal with a frequency-doubled Ti:sapphire (λ = 400 nm). After calculus removal, enamel and cementum surfaces are investigated for calculus debris and damage to the underlying hard tissue surface. Compared to the smear layer, grooves, and unintentional hard tissue removal typically found using these conventional treatments, calculus removal using the 400-nm laser is complete and selective without any removal of pristine dental hard tissue. Based on these results, selective ablation from the 400-nm laser appears to produce a root surface that would be more suitable for successful healing of periodontal tissues.

Surface modification of platinum by laser-produced X-rays

NASA Astrophysics Data System (ADS)

Latif, Hamid; Shahid Rafique, M.; Khaleeq-ur-Rahaman, M.; Sattar, Abdul; Anjum, S.; Usman, A.; Zaheer, S.; Rawat, R. S.

2014-11-01

Laser-induced plasma is used as an X-ray source for the growth of hillocks like nanostructures on platinum surface. To generate X-rays, plasma is produced by Nd:YAG laser, which is operated at second harmonics (λ = 532 nm, E = 400 mJ). Analytical grade 5 N pure Al, Cu and W are used as laser targets for X-rays production. X-rays produced from Al, Cu and W plasmas are used to irradiate three analytical grade (5 N pure) platinum substrates, respectively, under the vacuum ∼10-4 torr. XRD analysis shows considerable structural changes in the exposed platinum. The decrement in reflection intensities, increment in dislocation line density, change in d-spacing and disturbance in the periodicity of planes evidently prove these structural changes. Atomic force microscope AFM topographic analysis of the platinum exposed to X-rays emitted from Al, Cu and W targets showed that nanometer-size hillocks are produced on the platinum surface irrespective of the source. It has also been observed that due to these hillocks, the roughness of the surface has increased. Conductivity of hillocks produced from X-rays produced by Al, Cu and W targets is compared and it is shown that the hillocks produced by Al target X-rays have better conductivity compared to the hillocks produced by X-rays from Cu and W targets.

Visible Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-01-01

circular output beams are easily coupled into optical fibers, or focused or collimated with microlenslets. The VCSELs can be tested individually at the wafer...semiconductor visible VCSEL . Also shown is the DBR reflectance and reflectivity phase , as seen from the optical cavity, and the electric field intensity ...76 xv Figure page 2.32 Calculated electric field intensity for the example IR and visible VCSELs shown in Fig. 2.31 ........................... 79

1.3 micrometers Wavelength Vertical Cavity Surface Emitting Laser Fabricated by Orientation-Mismatched Wafer Bonding: A Prospect for Polarization Control

DTIC Science & Technology

2005-06-01

mismatched wafer bonding: A prospect for polarization control Yae L. Okuno,a) Jon Geske , Kian-Giap Gan, Yi-Jen Chiu, Steven P. DenBaars, and John E. Bowers...Uomi, M. Aoki, and T. Tsuchiya, IEEE J. Quantum Electron. 33, 959 ~1997!. 20 Y. L. Okuno, J. Geske , Y.-J. Chiu, S. P. DenBaars, and J. E. Bowers, Proc

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-08-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ˜3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ˜550 μW, compared to ˜80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

Long-wavelength photonic integrated circuits and avalanche photodetectors

NASA Astrophysics Data System (ADS)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve InGaAs/Si APDs with much greater potential than the traditional InGaAs/InP APDs. Preliminary results on their performance will be presented.

Optical glucose monitoring using vertical cavity surface emitting lasers (VCSELs)

NASA Astrophysics Data System (ADS)

Talebi Fard, Sahba; Hofmann, Werner; Talebi Fard, Pouria; Kwok, Ezra; Amann, Markus-Christian; Chrostowski, Lukas

2009-08-01

Diabetes Mellitus is a common chronic disease that has become a public health issue. Continuous glucose monitoring improves patient health by stabilizing the glucose levels. Optical methods are one of the painless and promising methods that can be used for blood glucose predictions. However, having accuracies lower than what is acceptable clinically has been a major concern. Using lasers along with multivariate techniques such as Partial Least Square (PLS) can improve glucose predictions. This research involves investigations for developing a novel optical system for accurate glucose predictions, which leads to the development of a small, low power, implantable optical sensor for diabetes patients.

Focusing metasurface quantum-cascade laser with a near diffraction-limited beam

DOE PAGES

Xu, Luyao; Chen, Daguan; Itoh, Tatsuo; ...

2016-10-17

A terahertz vertical-external-cavity surface-emitting-laser (VECSEL) is demonstrated using an active focusing reflectarray metasurface based on quantum-cascade gain material. The focusing effect enables a hemispherical cavity with flat optics, which exhibits higher geometric stability than a plano-plano cavity and a directive and circular near-diffraction limited Gaussian beam with M 2 beam parameter as low as 1.3 and brightness of 1.86 × 10 6 Wsr –1m –2. As a result, this work initiates the potential of leveraging inhomogeneous metasurface and reflectarray designs to achieve high-power and high-brightness terahertz quantum-cascade VECSELs.

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

NASA Technical Reports Server (NTRS)

Tombrello, Thomas A. (Inventor); Qiu, Yuanxun (Inventor); Mendenhall, Marcus H. (Inventor)

1985-01-01

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Metasurface external cavity laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao, E-mail: luyaoxu.ee@ucla.edu; Curwen, Christopher A.; Williams, Benjamin S.

2015-11-30

A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antenna-coupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam properties. A near-Gaussian beam of 4.3° × 5.1° divergence is observed and an output power level >5 mW is achieved. The polarized response of the metasurface allows the use of a wire-grid polarizer as an output coupler that is continuously tunable.

Depth profilometric case studies in caries diagnostics of human teeth using modulated laser radiometry and luminescence

NASA Astrophysics Data System (ADS)

Jeon, Raymond J.; Mandelis, Andreas; Abrams, Stephen H.

2003-01-01

Simultaneous measurements from human teeth of photothermal radiometric (PTR) and luminescence (LM) signals induced by an intensity modulated laser have been performed to assess the feasibility of detecting deep lesions and near-surface cracks, to examine the effects of varying enamel thicknesses, the presence of fillings, and stains on the surface of teeth. A commercial dc luminescence monitoring instrument (DIAGNOdent by KaVo) was also used to examine a set of teeth for comparison purposes with PTR and LM. PTR amplitude signals from carious regions and from thin enamel were higher than those from healthy regions and thicker enamel. A crack produces a peak in the PTR amplitude scan, as well as a sudden change in the luminescence amplitude at the corresponding point. At low frequencies (5 Hz), the PTR amplitude showed high sensitivity to a deep (about 2 mm) lesion, while at high frequencies (700 Hz) it was more sensitive to surface cracks. It was concluded that by selecting proper modulation frequencies of the laser, measurements of PTR and LM signals could be used as a dental diagnostic technique with a small, inexpensive, low-power (<30 mW) semiconductor laser as a light source emitting in the optical window range of hard tissue (650-1000 nm).

Transverse single-mode edge-emitting lasers based on coupled waveguides.

PubMed

Gordeev, Nikita Yu; Payusov, Alexey S; Shernyakov, Yuri M; Mintairov, Sergey A; Kalyuzhnyy, Nikolay A; Kulagina, Marina M; Maximov, Mikhail V

2015-05-01

We report on the transverse single-mode emission from InGaAs/GaAs quantum well edge-emitting lasers with broadened waveguide. The lasers are based on coupled large optical cavity (CLOC) structures where high-order vertical modes of the broad active waveguide are suppressed due to their resonant tunneling into a coupled single-mode passive waveguide. The CLOC lasers have shown stable Gaussian-shaped vertical far-field profiles with a reduced divergence of ∼22° FWHM (full width at half-maximum) in CW (continuous-wave) operation.

Collective effects in the Thomson back-scattering between a laser pulse and a relativistic electron beam

NASA Astrophysics Data System (ADS)

Bacci, A.; Maroli, C.; Petrillo, V.; Serafini, L.

2006-08-01

Collective effects in the radiation emission via Thomson back-scattering of an intense optical laser pulse by high brightness electron beams are analyzed. The micro-bunching of the electron beam on the scale of the wavelength of the emitted radiation and the consequent free-electron-laser instability may significantly enhance the number of photons emitted. Scaling-laws of the radiation properties, both in the collective and incoherent spontaneous regimes versus laser and electron beam parameters are discussed in the framework of the one-dimensional model.

Detection of defects in laser welding of AZ31B magnesium alloy in zero-gap lap joint configuration by a real-time spectroscopic analysis

NASA Astrophysics Data System (ADS)

Harooni, Masoud; Carlson, Blair; Kovacevic, Radovan

2014-05-01

The effect of surface oxide layer existing at the lap-joint faying surface of magnesium sheets is investigated on the keyhole dynamics of the weld pool and weld bead qualities. It is observed that by removing the oxide layer from the faying surface of the lap joint, a high quality weld can be achieved in the laser welding process. However, the presence of an oxide layer deteriorates the quality of the weld by forming pores at the interface of the two overlapped sheets. The purpose of this paper is to identify the correlation between the integrity of the weld and the interaction between the laser and material. A spectroscopy sensor was applied to detect the spectra emitted from a plasma plume during the laser welding of AZ31B magnesium alloy in a zero-gap lap joint configuration. The electron temperature was calculated by applying a Boltzmann plot method based on the detected spectra, and the correlation between the pore formation and the spectral signals was studied. The laser molten pool and the keyhole condition were monitored in real-time by a high speed charge-coupled device (CCD) camera. A green laser was used as an illumination source in order to detect the influence of the oxide layer on the dynamic behavior of the molten pool. Results revealed that the detected spectrum and weld defects had a meaningful correlation for real-time monitoring of the weld quality during laser welding of magnesium alloys.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Feedback-controlled laser fabrication of micromirror substrates.

PubMed

Petrak, Benjamin; Konthasinghe, Kumarasiri; Perez, Sonia; Muller, Andreas

2011-12-01

Short (40-200 μs) single focused CO(2) laser pulses of energy ≳100 μJ were used to fabricate high quality concave micromirror templates on silica and fluoride glass. The ablated features have diameters of ≈20-100 μm and average root-mean-square (RMS) surface microroughness near their center of less than 0.2 nm. Temporally monitoring the fabrication process revealed that it proceeds on a time scale shorter than the laser pulse duration. We implement a fast feedback control loop (≈20 kHz bandwidth) based on the light emitted by the sample that ensures an RMS size dispersion of less than 5% in arrays on chips or in individually fabricated features on an optical fiber tip, a significant improvement over previous approaches using longer pulses and open loop operation.

Tuning the Quantum Efficiency of Random Lasers - Intrinsic Stokes-Shift and Gain

PubMed Central

Lubatsch, Andreas; Frank, Regine

2015-01-01

We report the theoretical analysis for tuning the quantum efficiency of solid state random lasers. Vollhardt-Wölfle theory of photonic transport in disordered non-conserving and open random media, is coupled to lasing dynamics and solved positionally dependent. The interplay of non-linearity and homogeneous non-radiative frequency conversion by means of a Stokes-shift leads to a reduction of the quantum efficiency of the random laser. At the threshold a strong decrease of the spot-size in the stationary state is found due to the increase of non-radiative losses. The coherently emitted photon number per unit of modal surface is also strongly reduced. This result allows for the conclusion that Stokes-shifts are not sufficient to explain confined and extended mode regimes. PMID:26593237

Tuning the Quantum Efficiency of Random Lasers - Intrinsic Stokes-Shift and Gain.

PubMed

Lubatsch, Andreas; Frank, Regine

2015-11-23

We report the theoretical analysis for tuning the quantum efficiency of solid state random lasers. Vollhardt-Wölfle theory of photonic transport in disordered non-conserving and open random media, is coupled to lasing dynamics and solved positionally dependent. The interplay of non-linearity and homogeneous non-radiative frequency conversion by means of a Stokes-shift leads to a reduction of the quantum efficiency of the random laser. At the threshold a strong decrease of the spot-size in the stationary state is found due to the increase of non-radiative losses. The coherently emitted photon number per unit of modal surface is also strongly reduced. This result allows for the conclusion that Stokes-shifts are not sufficient to explain confined and extended mode regimes.

CW laser use in biomedical research and practice

NASA Astrophysics Data System (ADS)

Matthopoulos, D. P.

2003-04-01

The communication of humans with their surrouding is achieved through their senses and the related organs. Visual communication using the eyes is made possible because the various sources of light, natural i.e. the sun or the lightning, or artificial such as Lasers, emit electromagnetic radiation which is either reflected or scattered by surfaces. This radiation received by eyes is processed in the brain where the images of the environment are developed. The luminous processing can be either macro- or microscopic. The macroscopic processing is the result of light coming from the sun or from wide range lamps, while the microscopic results from light coming from wide range lamps, mercury lamps, lasers or electron beam. The microscopic processing is the subject we are dealing with in this presentation.

Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim

2018-03-01

Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of laser ablation including different laser parameters on electrical and optical properties of GaN-based LED chips was evaluated. The results for LEDs on sapphire with transparent conductive oxide p-type contact on top as well as for thin-film LEDs are reported. A reduction of leakage current by up to six orders in magnitude and homogeneous luminance distribution after proper laser defect treatment were achieved.

Fundamentals of metasurface lasers based on resonant dark states

DOE PAGES

Droulias, Sotiris; Jain, Aditya; Koschny, Thomas; ...

2017-10-30

Recently, our group proposed a metamaterial laser design based on explicitly coupled dark resonant states in low-loss dielectrics, which conceptually separates the gain-coupled resonant photonic state responsible for macroscopic stimulated emission from the coupling to specific free-space propagating modes, allowing independent adjustment of the lasing state and its coherent radiation output. Due to this functionality, it is now possible to make lasers that can overcome the trade-off between system dimensions and Q factor, especially for surface emitting lasers with deeply subwavelength thickness. In this paper, we give a detailed discussion of the key functionality and benefits of this design, suchmore » as radiation damping tunability, directionality, subwavelength integration, and simple layer-by-layer fabrication. Finally, we examine in detail the fundamental design tradeoffs that establish the principle of operation and must be taken into account and give guidance for realistic implementations.« less

THz generation by laser coupling to carbon nanotube array

NASA Astrophysics Data System (ADS)

Malik, Rakhee; Uma, R.

2018-01-01

A viable scheme of THz radiation generation by beating of two lasers ( ω1 , k→ 1 ; ω2 , k→ 2 ) in a nanotube array, mounted on a dielectric substrate, is proposed and studied. The free electrons of the nanotubes acquire a large oscillatory velocity and experience a beat frequency ponderomotive force that turns nanotubes into oscillating dipole antennae emitting THz radiation. The THz power peaks in directions where a phase difference between fields due to successive nanotubes is integral multiple of 2 π . The THz power is large when the beat frequency equals ωp/√{2 } (where ωp is the electron plasma frequency) and surface plasmon resonance occurs. For our set of laser and carbon nanotube parameters, the generated THz is about 0.1 kW for CO2 laser power of 10 GW and pulse length of a few picoseconds.

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown narrow spectral linewidths of 7-10 nm, extracted light output power in the range of 200-300 muW, and modulation speed up to 300 MHz. This is the first demonstration of 1.3 muRCLEDs on GaAs substrates with performance comparable to InP based surface-emitting LEDs.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

PubMed

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Isotope separation apparatus and method

DOEpatents

Cotter, Theodore P.

1982-12-28

The invention relates to a method and apparatus for laser isotope separation by photodeflection. A molecular beam comprising at least two isotopes to be separated intersects, preferable substantially perpendicular to one broad side of the molecular beam, with a laser beam traveling in a first direction. The laser beam is reflected back through the molecular beam, preferably in a second direction essentially opposite to the first direction. The laser beam comprises .pi.-pulses of a selected wavelength which excite unexcited molecules, or cause stimulated emission of excited molecules of one of the isotopes. Excitation caused by first direction .pi.-pulses moves molecules of the isotope excited thereby in the first direction. Stimulated emission of excited molecules of the isotope is brought about by returning .pi.-pulses traveling in the second direction. Stimulated emission moves emitting molecules in a direction opposite to the photon emitted. Because emitted photons travel in the second direction, emitting molecules move in the first direction. Substantial molecular movement is accomplished by a large number of .pi.-pulse-molecule interactions. A beam corer collects the molecules in the resulting enriched divergent portions of the beam.

Photo-ionization and modification of nanoparticles on transparent substrates by ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly; Komolov, Vladimir; Li, Hao; Yu, Qingsong; Przhibel'skii, Sergey; Smirnov, Dmitry

2011-02-01

The objective of this combined experimental and theoretical research is to study the dynamics and mechanisms of nanoparticle interaction with ultrashort laser pulses and related modifications of substrate surface. For the experimental effort, metal (gold), dielectric (SiO2) and dielectric with metal coating (about 30 nm thick) spherical nanoparticles deposited on glass substrate are utilized. Size of the particles varies from 20 to 200 nm. Density of the particles varies from low (mean inter-particle distance 100 nm) to high (mean inter-particle distance less than 1 nm). The nanoparticle assemblies and the corresponding empty substrate surfaces are irradiated with single 130-fs laser pulses at wavelength 775 nm and different levels of laser fluence. Large diameter of laser spot (0.5-2 mm) provides gradient variations of laser intensity over the spot and allows observing different laser-nanoparticle interactions. The interactions vary from total removal of the nanoparticles in the center of laser spot to gentle modification of their size and shape and totally non-destructive interaction. The removed particles frequently form specific sub-micrometer-size pits on the substrate surface at their locations. The experimental effort is supported by simulations of the nanoparticle interactions with high-intensity ultrashort laser pulse. The simulation employs specific modification of the molecular dynamics approach applied to model the processes of non-thermal particle ablation following laser-induced electron emission. This technique delivers various characteristics of the ablation plume from a single nanoparticle including energy and speed distribution of emitted ions, variations of particle size and overall dynamics of its ablation. The considered geometry includes single isolated particle as well a single particle on a flat substrate that corresponds to the experimental conditions. The simulations confirm existence of the different regimes of laser-nanoparticle interactions depending on laser intensity and wavelength. In particular, implantation of ions departing from the nanoparticles towards the substrate is predicted.

Mode control in photonic crystal surface emitting lasers (PCSELs) through in-plane feedback (Conference Presentation)

NASA Astrophysics Data System (ADS)

Taylor, Richard J. E.; Li, Guangrui; Ivanov, Pavlo; Childs, David T. D.; Stevens, Ben J.; Babazadeh, Nasser; Ignatova, Olesya; Hogg, Richard A.

2017-02-01

All-semiconductor photonic crystal surface-emitting lasers (PCSELs) operating in CW mode at room temperature and coherently coupled arrays of these lasers are reviewed. These PCSELs are grown via MOVPE on GaAs substrates and include QW active elements and GaAs/InGaP photonic crystal (PC) layer situated above this active zone. Atoms of triangular shapes have been shown to increase optical power from the PCSEL but are also shown to result in a competition between lasing modes. Simulation shows that the energy splitting of lasing modes is smaller for triangular atoms, than for circles making high power single-mode devices difficult to achieve. In this work we experimentally investigate the effect of lateral optical feedback introduced by a facet cleave along one or two perpendicular PCSEL edges. This cleavage plane is misaligned to the PC resulting in a periodic variation of facet phase along the side of the device. Results confirm that a single cleave selects the lowest threshold 2D lasing mode, resulting in a 20% reduction in threshold current and favours single-mode emission. The addition of a second cleave at right-angles to the first has no significant effect upon threshold current. The virgin device is shown to have a symmetric far-field (1 degree) whilst a single cleave produces a 1 degree divergence perpendicular to cleave and 5 degree parallel to cleave. The second orthogonal cleave results in the far field becoming symmetric again but with a divergence angle of 1 degree indicating that single-mode lasing is supported over a wider area.

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V

2012-01-31

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays andmore » allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.« less

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

NASA Astrophysics Data System (ADS)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Conversion of the energy of fast electrons to thermal plasma radiation

NASA Astrophysics Data System (ADS)

Vergunova, G. A.; Rozanov, Vladislav B.

1992-01-01

An analysis is made of the conversion of the energy of highly energetic fast electrons, generated by the action of CO2 laser radiation on a target, into characteristic radiation emitted by a plasma formed from shell targets which, for instance, may be present inside targets irradiated by the CO2 laser. Analytical formulas are obtained for the temperature of the converted radiation. The results show that it is possible to control this radiation by choosing the parameters of the target and of the fast electron flux. The efficiency of conversion into characteristic thermal radiation is found numerically to be 95%. This method of conversion is more favorable than direct interaction of CO2 laser radiation with a target since the emitting region is localized in the target mass. When a laser interacts with a target the mass of this region increases with time and so the temperature of the emitted radiation is lower than in the case when fast electrons act on the target.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

NASA Astrophysics Data System (ADS)

Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2015-01-01

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

NASA Technical Reports Server (NTRS)

Qui, Yueming; Gogna, Pawan; Muller, Richard; Maker, paul; Wilson, Daniel; Stintz, Andreas; Lester, Luke

2003-01-01

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB.

A fundamental mode Nd:GdVO4 laser pumped by a large aperture 808 nm VCSEL

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Ma, J. L.; Yan, C. L.; Liu, G. J.; Ma, X. H.; Gong, J. F.; Feng, Y.; Wei, Z. P.; Wang, Y. X.; Zhao, Y. J.

2013-05-01

A fundamental mode Nd:GdVO4 laser pumped by a vertical cavity surface emitting laser (VCSEL) is experimentally demonstrated. The VCSEL has a circular output-beam which makes it easier for it to be directly coupled to a Nd:GdVO4 microcrystal. In our research, a large aperture 808 nm VCSEL, with a multi-ring-shaped aperture (MRSA) and an almost Gaussian-shaped far-field profile, is used as the pumping source. Experimental results for the Nd:GdVO4 laser pumped by the VCSEL are presented. The maximum output peak power of 0.754 W is obtained under a pump peak power of 1.3 W, and the corresponding opto-optic conversion efficiency is 58.1%. The average slope efficiency is 65.8% from the threshold pump power of 0.2 W to the pump power of 1.3 W. The laser beam quality factors are measured to be {M}x2=1.2 0 and {M}y2=1.1 5.

Dose control for noncontact laser coagulation of tissue

NASA Astrophysics Data System (ADS)

Roggan, Andre; Albrecht, Hansjoerg; Bocher, Thomas; Rygiel, Reiner; Winter, Harald; Mueller, Gerhard J.

1995-01-01

Nd:YAG lasers emitting at 1064 nm are often used for coagulation of tissue in a non-contact mode, i.e. the treatment of verrucae, endometriosis, tumor coagulation and hemostasis. During this process an uncontrolled temperature rise of the irradiated area leads to vaporization and, finally, to a carbonization of the tissue surface. To prevent this, a dose controlled system was developed using an on-line regulation of the output laser power. The change of the backscattered intensity (remission) of the primary beam was used as a dose dependent feedback parameter. Its dependence on the temperature was determined with a double integrating sphere system and Monte-Carlo simulations. The remission of the tissue was calculated in slab geometry from diffusion theory and Monte-Carlo simulations. The laser control was realized with a PD-circuit and an A/D-converter, enabling the direct connection to the internal bus of the laser system. Preliminary studies with various tissues revealed the practicability of the system.

The Effects of Optical Feedback on Polarization of Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-12-01

Beam Mode TEMN Dichroic Beam Splitters (2) Manufacturer CVI Maximum Reflectance 375 mrn, 950 un Maximum Transmission 830 rnm, 910 mn Design Angle 5... beam splitter (DBS). The DBS reflects the majority of the light at the VCSEL wavelength (and passes most of the pump wavelength). A normal beamsplitter...degrees Beam Splitters Manufacturer Melles Griot Reflectancetrransnittance -50/50 Filters (2) Manufacturer Ealing Center Wavelength 880 urn, 940 mun

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

NASA Technical Reports Server (NTRS)

Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

1999-01-01

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: An ultraviolet barrier-discharge OH molecular lamp

NASA Astrophysics Data System (ADS)

Sosnin, E. A.; Erofeev, M. V.; Avdeev, S. M.; Panchenko, Aleksei N.; Panarin, V. A.; Skakun, V. S.; Tarasenko, Viktor F.; Shitts, D. V.

2006-10-01

The energy and spectral parameters of a barrier discharge in a mixture of argon with hydroxyl •OH are studied experimentally. A sealed lamp with the radiation intensity maximum at λ = 309.2 nm, an emitting surface area of ~700 cm2, and a radiant excitance of 1.5 mW cm-2 has been fabricated. The radiant power of the lamp is 1.1 W.

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting lasers ( VCSELs ) [1, 2, 3]. They are also being... molecular beam epitaxy ( MBE ) [5, 6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE -grown A1GaAs layers are sometimes pseudo or digital...Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not

Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications

DTIC Science & Technology

2005-01-01

molecular beam epitaxy , semiconductors, finite element method, modeling and simulation, oxidation furnace 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...Patterson Air Force Base). Device material growth was accomplished by means of molecular beam epitaxy (MBE) using a Varian GENII MBE system owned by the...grown by molecular beam epitaxy on a GaAs substrate. Vertical posts, with square and circular cross sections ranging in size from 5 to 40 microns

Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

PubMed

Shao, Haifeng; Keyvaninia, Shahram; Vanwolleghem, Mathias; Ducournau, Guillaume; Jiang, Xiaoqing; Morthier, Geert; Lampin, Jean-Francois; Roelkens, Gunther

2014-11-15

We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.

Wavelength stabilized high pulse power laser diodes for automotive LiDAR

NASA Astrophysics Data System (ADS)

Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

2018-03-01

Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

Multifunctional Polymer Nanofibers: UV Emission, Optical Gain, Anisotropic Wetting, and High Hydrophobicity for Next Flexible Excitation Sources

PubMed Central

2015-01-01

The use of UV light sources is highly relevant in many fields of science, being directly related to all those detection and diagnosis procedures that are based on fluorescence spectroscopy. Depending on the specific application, UV light-emitting materials are desired to feature a number of opto-mechanical properties, including brightness, optical gain for being used in laser devices, flexibility to conform with different lab-on-chip architectures, and tailorable wettability to control and minimize their interaction with ambient humidity and fluids. In this work, we introduce multifunctional, UV-emitting electrospun fibers with both optical gain and greatly enhanced anisotropic hydrophobicity compared to films. Fibers are described by the onset of a composite wetting state, and their arrangement in uniaxial arrays further favors liquid directional control. The low gain threshold, optical losses, plastic nature, flexibility, and stability of these UV-emitting fibers make them interesting for building light-emitting devices and microlasers. Furthermore, the anisotropic hydrophobicity found is strongly synergic with optical properties, reducing interfacial interactions with liquids and enabling smart functional surfaces for droplet microfluidic and wearable applications. PMID:26401889

Organization of the Topical Meeting on Tunable Solid State Lasers Held in North Falmouth, Massachusetts on 1-3 May 1989

DTIC Science & Technology

1989-08-30

nm to produce blue light at 455 nm (Figure 1). A 20 Hz doubled Nd:YAG pump laser emitting up to 150 mJ at 532 nm 147 WA4-2 was used to resonantly...pumped by a diode laser, then in addition to the processes of Fig. 1, excited state absorption of the pump light from both 4I13,/z and 4I3112 may be...are visible and UV systems pumped at wavelengths that are available from semiconductor diode lasers and infrared emitting systems having high slope

Results of the trials and light-delivery evaluation at low-level laser therapy of acute and chronic pain

NASA Astrophysics Data System (ADS)

Roeva, Tatiana; Petrov, Todor S.; Minkovski, Nikolai I.

2004-06-01

Although the low-level laser therapy (LLLT) is accepted in the clinical practice, its efficiency is still questionable because of the unclear mechanisms of LLLT action. This work presents the results of LLLT applied to volunteers who need recovery from trauma or suffer from rheumatic diseases, inflammatory disorders, etc. The control group we used for comparison consisted of patients being treated by conventional therapy that included massage and acupuncture needles. The effectiveness of the LLLT was graded under four categories. Short-term and long-term side effects as well as conditions responding only to LLLT were recorded. The successful treatments were up to 70%, which coincided with the result of the control group. The LLLT was performed with a GaAs laser system SIX LASER IR - Bulgaria provided with additional set of six light CW emitting diodes to scan a larger area of a tissue surface. To evaluate the light delivery inside the tissue, the spatial maps of the light spot at the laser output in different operating regimes were measured. On their basis, the absorbed dose was calculated both in the boundary layer under the tissue surface and in depth using a reduced variance Monte-Carlo code.

Modeling thermionic emission from laser-heated nanoparticles

DOE PAGES

Mitrani, J. M.; Shneider, M. N.; Stratton, B. C.; ...

2016-02-01

An adjusted form of thermionic emission is applied to calculate emitted current from laser-heated nanoparticles and to interpret time-resolved laser-induced incandescence (TR-LII) signals. This adjusted form of thermionic emission predicts significantly lower values of emitted current compared to the commonly used Richardson-Dushman equation, since the buildup of positive charge in a laser-heated nanoparticle increases the energy barrier for further emission of electrons. Thermionic emission influences the particle's energy balance equation, which can influence TR-LII signals. Additionally, reports suggest that thermionic emission can induce disintegration of nanoparticle aggregates when the electrostatic Coulomb repulsion energy between two positively charged primary particles ismore » greater than the van der Waals bond energy. Furthermore, since the presence and size of aggregates strongly influences the particle's energy balance equation, using an appropriate form of thermionic emission to calculate emitted current may improve interpretation of TR-LII signals.« less

Inkjet-printed vertically emitting solid-state organic lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mhibik, Oussama; Chénais, Sébastien; Forget, Sébastien

In this paper, we show that Inkjet Printing can be successfully applied to external-cavity vertically emitting thin-film organic lasers and can be used to generate a diffraction-limited output beam with an output energy as high as 33.6 μJ with a slope efficiency S of 34%. Laser emission shows to be continuously tunable from 570 to 670 nm using an intracavity polymer-based Fabry-Perot etalon. High-optical quality films with several μm thicknesses are realized, thanks to ink-jet printing. We introduce a new optical material where EMD6415 commercial ink constitutes the optical host matrix and exhibits a refractive index of 1.5 and an absorption coefficientmore » of 0.66 cm{sup −1} at 550–680 nm. Standard laser dyes like Pyrromethene 597 and Rhodamine 640 are incorporated in solution to the EMD6415 ink. Such large size “printed pixels” of 50 mm{sup 2} present uniform and flat surfaces, with roughness measured as low as 1.5 nm in different locations of a 50 μm × 50 μm AFM scan. Finally, as the gain capsules fabricated by Inkjet printing are simple and do not incorporate any tuning or cavity element, they are simple to make, have a negligible fabrication cost, and can be used as fully disposable items. This work opens the way towards the fabrication of really low-cost tunable visible lasers with an affordable technology that has the potential to be widely disseminated.« less

Relativistic plasma control for single attosecond x-ray burst generation

NASA Astrophysics Data System (ADS)

Baeva, T.; Gordienko, S.; Pukhov, A.

2006-12-01

We show that managing time-dependent polarization of the relativistically intense laser pulse incident on a plasma surface allows us to gate a single (sub)attosecond x-ray burst even when a multicycle driver is used. The single x-ray burst is emitted when the tangential component of the vector potential at the plasma surface vanishes. This relativistic plasma control is based on the theory of relativistic spikes [T. Baeva, S. Gordienko, and A. Pukhov, Phys. Rev. E 74, 046404 (2006)]. The relativistic plasma control is demonstrated here numerically by particle-in-cell simulations.

Results of the trials and light delivery evaluation on low-level laser therapy of acute and chronic pain

NASA Astrophysics Data System (ADS)

Stoykova, Elena V.; Roeva, Tatiana; Petrova, Kremena S.; Petrov, Todor S.; Minkovski, Nikolai

2003-11-01

Although the low-level laser therapy (LLLT) has been accepted in the clinical practice, its efficiency is still questionable because of the unclear mechanisms of LLLT action. This work presents the results of LLLT applied to volunteers who need recovery from trauma or suffer from rheumatic diseases, inflammatory disorders, etc. The control group we used for comparison consisted of patients being treated by conventional therapy that included massage and acupuncture needles. The effectiveness of the LLLT was graded under four categories. Short-term and long-term side effects as well as conditions responding only to LLLT were recorded. The successful treatments were up to 70%, which coincided with the result of the control group. The LLLT was performed with a GaAs laser system provided with additional set of six light CW emitting diodes to scan a larger area of a tissue surface. To evaluate the light delivery inside the tissue, the spatial energy distribution within the laser beam was measured with a CCD camera. On its basis, the light dose absorbed in the tissue was calculated both in the boundary layer under the surface and in depth using a reduced variance Monte-Carlo code.

Infrared light sensor applied to early detection of tooth decay

NASA Astrophysics Data System (ADS)

Benjumea, Eberto; Espitia, José; Díaz, Leonardo; Torres, Cesar

2017-08-01

The approach dentistry to dental care is gradually shifting to a model focused on early detection and oral-disease prevention; one of the most important methods of prevention of tooth decay is opportune diagnosis of decay and reconstruction. The present study aimed to introduce a procedure for early diagnosis of tooth decay and to compare result of experiment of this method with other common treatments. In this setup, a laser emitting infrared light is injected in core of one bifurcated fiber-optic and conduced to tooth surface and with the same bifurcated fiber the radiation reflected for the same tooth is collected and them conduced to surface of sensor that measures thermal and light frequencies to detect early signs of decay below a tooth surface, where demineralization is difficult to spot with x-ray technology. This device will can be used to diagnose tooth decay without any chemicals and rays such as high power lasers or X-rays.

Far-field emission characteristics and linewidth measurements of surface micro-machined MEMS tunable VCSELs

NASA Astrophysics Data System (ADS)

Paul, Sujoy; Gierl, Christian; Gründl, Tobias; Zogal, Karolina; Meissner, Peter; Amann, Markus-Christian; Küppers, Franko

2013-03-01

In this paper, we demonstrate for the first time the far-field experimental results and the linewidth characteris- tics for widely tunable surface-micromachined micro-electro-mechanical system (MEMS) vertical-cavity surface- emitting lasers (VCSELs) operating at 1550 nm. The fundamental Gaussian mode emission is confirmed by optimizing the radius of curvature of top distributed Bragg reflector (DBR) membrane and by choosing an ap- propriate diameter of circular buried tunnel junctions (BTJs) so that only the fundamental Gaussian mode can sustain. For these VCSELs, a mode-hop free continuous tuning over 100 nm has already been demonstrated, which is achieved by electro-thermal tuning of the MEMS mirror. The fiber-coupled optical power of 2mW over the entire tuning range has been reported. The singlemode laser emission has more than 40 dB of side-mode suppression ratio (SMSR). The smallest linewidth achieved with these of MEMS tunable VCSELs is 98MHz which is one order of magnitude higher than that of fixed-wavelength VCSELs.

Vertical-cavity surface-emitting lasers: present and future

NASA Astrophysics Data System (ADS)

Morgan, Robert A.

1997-04-01

This manuscript reviews the present status of 'commercial- grade,' state-of-the-art planar, batch-fabricable, vertical- cavity surface-emitting lasers (VCSELs). Commercial-grade performance on all fronts for high-speed data communications is clearly established. In discussing the 'present,' we focus on the entrenched proton-implanted AlGaAs-based (emitting near 850 nm) technology. Renditions of this VCSEL design exist in commercial products and have enabled numerous application demonstrations. Our designs more than adequately meet producibility, performance, and robustness stipulations. Producibility milestones include greater than 99% device yield across 3-in-dia metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across greater than 100-nm range. Progress in performance includes the elimination of the excessive voltage-drop that plagued VCSELs as recently as 2 to 3 years ago. Threshold voltages as low as Vth equals 1.53 V (and routinely less than 1.6 V) are now commonplace. Submilliamp threshold currents (Ith equals 0.68 mA) have even been demonstrated with this planar structure. Moreover, continuous wave (cw) power Pcw greater than 59 mW and respectable wall-plug efficiencies ((eta) wp equals 28%) have been demonstrated. VCSEL robustness is evidenced by maximum cw lasing temperature T equals 200 degrees Celsius and temperature ranges of 10 K to 400 K and minus 55 degrees Celsius to 155 degrees Celsius on a single VCSEL. These characteristics should enable great advances in VCSEL-based technologies and beckon the notion that 'commercial-grade' VCSELs are viable in cryogenic and avionics/military environments. We also discuss what the future may hold in extensions of this platform to different wavelengths, increased integration, and advanced structures. This includes low-threshold, high- speed, single-mode VCSELs, hybrid VCSEL transceivers, and self-pulsating VCSELs.

Diode-pumped quasi-three-level Nd:GdV O4-Nd:YAG sum-frequency laser at 464 nm

NASA Astrophysics Data System (ADS)

Lu, Jie

2014-04-01

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 464 nm. A 808 nm diode pumped a Nd:GdV O4 crystal emitting at 912 nm. A part of the pump power was then absorbed by the Nd:GdV O4 crystal. The remainder was used to pump a Nd:YAG crystal emitting at 946 nm. Intracavity sum-frequency mixing at 912 and 946 nm was then realized in a LiB3O5 (LBO) crystal to produce blue radiation. We obtained a cw output power of 1.52 W at 464 nm with a pump laser diode emitting 18.4 W at 808 nm.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Pulsations of light emitted by laser diodes

NASA Astrophysics Data System (ADS)

Enders, P.

1988-11-01

A system of three simple rate equations, derived from equations describing the excess heating near the front face of a resonator, is used as a model of the appearance of spontaneous (self-sustained) pulsations of light emitted by injection lasers. The rate equations are considered as an almost conservative system and the limit cycle is calculated for the system. The good agreement with numerical results favors our approximation, compared with other approximate calculations.

High performance terahertz metasurface quantum-cascade VECSEL with an intra-cryostat cavity

DOE PAGES

Xu, Luyao; Curwen, Christopher A.; Reno, John L.; ...

2017-09-04

A terahertz quantum-cascade (QC) vertical-external-cavity surface-emitting-laser (VECSEL) is demonstrated with over 5 mW power in continuous-wave and single-mode operation above 77 K, in combination with a near-Gaussian beam pattern with full-width half-max divergence as narrow as ~5° × 5°, with no evidence of thermal lensing. This is realized by creating an intra-cryostat VECSEL cavity to reduce the cavity loss and designing an active focusing metasurface reflector with low power dissipation for efficient heat removal. Compared with a conventional quantumcascade laser based on a metal-metal waveguide, the intra-cryostat QC-VECSEL exhibits significant improvements in both output power level and beam pattern. Also,more » the intra-cryostat configuration newly allows evaluation of QC-VECSEL operation vs. temperature, showing a maximum pulsed mode operating temperature of 129 K. While the threshold current density in the QC-VECSEL is worse in comparison to a conventional edge-emitting metal-metal waveguide QClaser, the beam quality, slope efficiency, maximum power, and thermal resistance are all significantly improved.« less

Two-photon photoemission from a copper cathode in an Χ-band photoinjector

DOE PAGES

Li, H.; Limborg-Deprey, C.; Adolphsen, C.; ...

2016-02-24

This study presents two-photon photoemission from a copper cathode in an X-band photoinjector. We experimentally verified that the electron bunch charge from photoemission out of a copper cathode scales with laser intensity (I) square for 400 nm wavelength photons. We compare this two-photon photoemission process with the single photon process at 266 nm. Despite the high reflectivity (R) of the copper surface for 400 nm photons (R=0.48) and higher thermal energy of photoelectrons (two-photon at 200 nm) compared to 266 nm photoelectrons, the quantum efficiency of the two-photon photoemission process (400 nm) exceeds the single-photon process (266 nm) when themore » incident laser intensity is above 300 GW/cm 2. At the same laser pulse energy (E) and other experimental conditions, emitted charge scales inversely with the laser pulse duration. A thermal emittance of 2.7 mm-mrad per mm root mean square (rms) was measured on our cathode which exceeds by sixty percent larger compared to the theoretical predictions, but this discrepancy is similar to previous experimental thermal emittance on copper cathodes with 266 nm photons. The damage of the cathode surface of our first-generation X-band gun from both rf breakdowns and laser impacts mostly explains this result. Using a 400 nm laser can substantially simplify the photoinjector system, and make it an alternative solution for compact pulsed electron sources.« less

Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

NASA Astrophysics Data System (ADS)

Yan, Danhua; Zhang, Wenrui; Cen, Jiajie; Stavitski, Eli; Sadowski, Jerzy T.; Vescovo, Elio; Walter, Andrew; Attenkofer, Klaus; Stacchiola, Darío J.; Liu, Mingzhao

2017-12-01

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices such as ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of the reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.

Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Danhua; Zhang, Wenrui; Cen, Jiajie

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices including ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O 2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of themore » reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.« less

Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

DOE PAGES

Yan, Danhua; Zhang, Wenrui; Cen, Jiajie; ...

2017-12-04

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices including ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O 2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of themore » reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.« less

Near-infrared-emitting colloidal Ag2S quantum dots exhibiting upconversion luminescence

NASA Astrophysics Data System (ADS)

Zhang, Yanyan; Jiang, Danyu; Yang, Wei; Wang, Dandan; Zheng, Huiping; Du, Yuansheng; Li, Xi; Li, Qiang

2017-02-01

Ag2S quantum dots (QDs) coated with thioglycolic acid (Ag2S QDs-TGA) have been synthesized in an organic solvent via a stepwise addition of reagents. When excited by a 980 nm laser, the near-infrared-emitting colloidal Ag2S QDs-TGA exhibit upconversion luminescence (UCL). The observed photoluminescence (PL) was attributed to the presence of ligand-modified Ag2S on the QD surfaces. Hence, upon dilution of the solution, the PL intensity initially increased before subsequently decreasing, accompanied by a blue shift in the PL spectra. The PL phenomena can be attributed to the increase in the amount of ligand-modified Ag2S on the QD surfaces upon dilution, which in turn affected the fluorescence resonance energy transfer (FRET) and re-emission of the surface energy level. The relations between the emission intensity of Ag2S QDs-TGA and the excitation power are investigated, and the results confirm that the UCL in Ag2S QDs-TGA can be ascribed to a two-photon-assisted absorption process via a real energy state.

20-Gbps optical LiFi transport system.

PubMed

Ying, Cheng-Ling; Lu, Hai-Han; Li, Chung-Yi; Cheng, Chun-Jen; Peng, Peng-Chun; Ho, Wen-Jeng

2015-07-15

A 20-Gbps optical light-based WiFi (LiFi) transport system employing vertical-cavity surface-emitting laser (VCSEL) and external light injection technique with 16-quadrature amplitude modulation (QAM)-orthogonal frequency-division multiplexing (OFDM) modulating signal is proposed. Good bit error rate (BER) performance and clear constellation map are achieved in our proposed optical LiFi transport systems. An optical LiFi transport system, delivering 16-QAM-OFDM signal over a 6-m free-space link, with a data rate of 20 Gbps, is successfully demonstrated. Such a 20-Gbps optical LiFi transport system provides the advantage of a free-space communication link for high data rates, which can accelerate the visible laser light communication (VLLC) deployment.

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

NASA Astrophysics Data System (ADS)

Albrecht, Alexander R.; Rotter, Thomas J.; Hains, Christopher P.; Stintz, Andreas; Xin, Guofeng; Wang, Tsuei-Lian; Kaneda, Yushi; Moloney, Jerome V.; Malloy, Kevin J.; Balakrishnan, Ganesh

2011-03-01

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

A low-threshold high-index-contrast grating (HCG)-based organic VCSEL

NASA Astrophysics Data System (ADS)

Shayesteh, Mohammad Reza; Darvish, Ghafar; Ahmadi, Vahid

2015-12-01

We propose a low-threshold high-index-contrast grating (HCG)-based organic vertical-cavity surface-emitting laser (OVCSEL). The device has the feasibility to apply both electrical and optical excitation. The microcavity of the laser is a hybrid photonic crystal (HPC) in which the top distributed Bragg reflector (DBR) is replaced by a sub-wavelength high-contrast-grating layer, and provides a high-quality factor. The simulated quality factor of the microcavity is shown to be as high as 282,000. We also investigate the threshold behavior and the dynamics of the OVCSEL optically pumped with sub-picosecond pulses. Results from numerical simulation show that lasing threshold is 75 nJ/cm2.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.

PubMed

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-12-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Visible Quantum Nanophotonics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramania, Ganapathi Subramanian; Wang, George T.; Fischer, Arthur J.

2017-09-01

The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDsmore » into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Droulias, Sotiris; Jain, Aditya; Koschny, Thomas

Recently, our group proposed a metamaterial laser design based on explicitly coupled dark resonant states in low-loss dielectrics, which conceptually separates the gain-coupled resonant photonic state responsible for macroscopic stimulated emission from the coupling to specific free-space propagating modes, allowing independent adjustment of the lasing state and its coherent radiation output. Due to this functionality, it is now possible to make lasers that can overcome the trade-off between system dimensions and Q factor, especially for surface emitting lasers with deeply subwavelength thickness. In this paper, we give a detailed discussion of the key functionality and benefits of this design, suchmore » as radiation damping tunability, directionality, subwavelength integration, and simple layer-by-layer fabrication. Finally, we examine in detail the fundamental design tradeoffs that establish the principle of operation and must be taken into account and give guidance for realistic implementations.« less

Measurements of gas temperatures at 100 kHz within the annulus of a rotating detonation engine

NASA Astrophysics Data System (ADS)

Rein, Keith D.; Roy, Sukesh; Sanders, Scott T.; Caswell, Andrew W.; Schauer, Frederick R.; Gord, James R.

2017-03-01

Cycle-resolved measurements of H2O temperatures and number densities taken within the detonation channel of a hydrogen—air rotating detonation engine (RDE) at a 100 kHz repetition rate using laser absorption spectroscopy are presented. The laser source used is an MEMS-tunable Vertical-Cavity Surface Emitting laser which scans from 1330 to 1360 nm. Optical access into and out of the RDE is achieved using a dual-core fiber optic. Light is pitched into the RDE through a sapphire window via a single-mode core, retroreflected off the mirror-polished inner radius of the RDE annulus, and collected with the multi-mode fiber core. The resulting absorption spectra are used to determine gas temperatures as a function of time. These measurements allow characterization of the transient-temperature response of the RDE.

Recent Advances of VCSEL Photonics

NASA Astrophysics Data System (ADS)

Koyama, Fumio

2006-12-01

A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing.

GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating

NASA Technical Reports Server (NTRS)

Wu, M. C.; Boenke, M. M.; Wang, S.; Clark, W. M., Jr.; Stevens, E. H.

1988-01-01

The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 C are obtained. The wavelength tuning rate with temperature is 0.8 A/C. The coupling coefficient is estimated to be 15/cm. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.

Wavelength-agile diode-laser sensing strategies for monitoring gas properties in optically harsh flows: application in cesium-seeded pulse detonation

NASA Astrophysics Data System (ADS)

Sanders, Scott Thomas; Mattison, Daniel W.; Ma, Lin; Jeffries, Jay B.; Hanson, Ronald K.

2002-06-01

The rapid, broad wavelength scanning capabilities of advanced diode lasers allow extension of traditional diode-laser absorption techniques to high pressure, transient, and generally hostile environments. Here, we demonstrate this extension by applying a vertical cavity surface-emitting laser (VCSEL) to monitor gas temperature and pressure in a pulse detonation engine (PDE). Using aggressive injection current modulation, the VCSEL is scanned through a 10 cm-1 spectral window at megahertz rates roughly 10 times the scanning range and 1000 times the scanning rate of a conventional diode laser. The VCSEL probes absorption lineshapes of the ~ 852 nm D2 transition of atomic Cs, seeded at ~ 5 ppm into the feedstock gases of a PDE. Using these lineshapes, detonated-gas temperature and pressure histories, spanning 2000 4000 K and 0.5 30 atm, respectively, are recorded with microsecond time response. The increasing availability of wavelength-agile diode lasers should support the development of similar sensors for other harsh flows, using other absorbers such as native H2O.

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

Design and properties of high-power highly-coherent single-frequency VECSEL emitting in the near- to mid-IR for photonic applications

NASA Astrophysics Data System (ADS)

Garnache, A.; Laurain, A.; Myara, M.; Sellahi, M.; Cerutti, L.; Perez, J. P.; Michon, A.; Beaudoin, G.; Sagnes, I.; Cermak, P.; Romanini, D.

2017-11-01

We demonstrate high power (multiwatt) low noise single frequency operation of tunable compact verical-external- cavity surface-emitting-lasers exhibiting a low divergence high beam quality, of great interest for photonics applications. The quantum-well based lasers are operating in CW at RT at 1μm and 2.3μm exploiting GaAs and Sb technologies. For heat management purpose the VECSEL membranes were bonded on a SiC substrate. Both high power diode pumping (using GaAs commercial diode) at large incidence angle and electrical pumping are developed. The design and physical properties of the coherent wave are presented. We took advantage of thermal lens-based stability to develop a short (0.5-5mm) external cavity without any intracavity filter. We measured a low divergence circular TEM00 beam (M2 = 1.2) close to diffraction limit, with a linear light polarization (> 30 dB). The side mode suppression ratio is > 45 dB. The free running laser linewidth is 37 kHz limited by pump induced thermal fluctuations. Thanks to this high-Q external cavity approach, the frequency noise is low and the dynamics is in the relaxation-oscillation-free regime, exhibiting low intensity noise (< 0.1%), with a cutoff frequency ∽ 41MHz above which the shot noise level is reached. The key parameters limiting the laser power and coherence will be discussed. These design/properties can be extended to other wavelengths.

Preparation, IR spectroscopy, and time-of-flight mass spectrometry of halogenated and methylated Si(111)

NASA Astrophysics Data System (ADS)

Salingue, Nils; Hess, Peter

2011-09-01

The preparation of chlorine-, bromine-, and iodine-terminated silicon surfaces (Si(111):Cl, Br, and I) using atomically flat Si(111)-(1×1):H is described. The halogenated surfaces were obtained by photochemically induced radical substitution reactions with the corresponding dihalogen in a Schlenk tube by conventional inert gas chemistry. The nucleophilic substitution of the Si-Cl functionality with the Grignard reagent (CH3MgCl) resulted in the unreconstructed methylated Si(111)-(1×1):CH3 surface. The halogenated and methylated silicon surfaces were characterized by Fourier transform infrared (FTIR) spectroscopy and laser-induced desorption of monolayers (LIDOM). Calibration of the desorption temperature via analysis of time-of-flight (TOF) distributions as a function of laser fluence allowed the determination of the originally emitted neutral fragments by TOF mass spectrometry using electron-impact ionization. The halogens were desorbed atomically and as SiX n (X = Cl, Br) clusters. The methyl groups mainly desorbed as methyl and ethyl fragments and a small amount of +SiCH3.

The simulation study on optical target laser active detection performance

NASA Astrophysics Data System (ADS)

Li, Ying-chun; Hou, Zhao-fei; Fan, Youchen

2014-12-01

According to the working principle of laser active detection system, the paper establishes the optical target laser active detection simulation system, carry out the simulation study on the detection process and detection performance of the system. For instance, the performance model such as the laser emitting, the laser propagation in the atmosphere, the reflection of optical target, the receiver detection system, the signal processing and recognition. We focus on the analysis and modeling the relationship between the laser emitting angle and defocus amount and "cat eye" effect echo laser in the reflection of optical target. Further, in the paper some performance index such as operating range, SNR and the probability of the system have been simulated. The parameters including laser emitting parameters, the reflection of the optical target and the laser propagation in the atmosphere which make a great influence on the performance of the optical target laser active detection system. Finally, using the object-oriented software design methods, the laser active detection system with the opening type, complete function and operating platform, realizes the process simulation that the detection system detect and recognize the optical target, complete the performance simulation of each subsystem, and generate the data report and the graph. It can make the laser active detection system performance models more intuitive because of the visible simulation process. The simulation data obtained from the system provide a reference to adjust the structure of the system parameters. And it provides theoretical and technical support for the top level design of the optical target laser active detection system and performance index optimization.

Demonstrating ultrafast polarization dynamics in spin-VCSELs

NASA Astrophysics Data System (ADS)

Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Gerhardt, Nils C.; Hofmann, Martin R.

2018-02-01

Vertical-cavity surface-emitting lasers (VCSELs) are used for short-haul optical data transmission with increasing bit rates. The optimization involves both enhanced device designs and the use of higher-order modulation formats. In order to improve the modulation bandwidth substantially, the presented work employs spin-pumped VCSELs (spin-VCSELs) and their polarization dynamics instead of relying on intensity-modulated devices. In spin-VCSELs, the polarization state of the emitted light is controllable via spin injection. By optical spin pumping a single-mode VCSEL is forced to emit light composed of both orthogonal linearly polarized fundamental modes. The frequencies of these two modes differ slightly by a value determined by the cavity birefringence. As a result, the circular polarization degree oscillates with their beat frequency, i.e., with the birefringence-induced mode splitting. We used this phenomenon to show so-called polarization oscillations, which are generated by pulsed spin injection. Their frequency represents the polarization dynamics resonance frequency and can be tuned over a wide range via the birefringence, nearly independent from any other laser parameter. In previous work we demonstrated a maximum birefringence-induced mode splitting of more than 250 GHz. In this work, compared to previous publications, we show an almost doubled polarization oscillation frequency of more than 80 GHz. Furthermore, we discuss concepts to achieve even higher values far above 100 GHz.

Photonic crystal microchip laser

NASA Astrophysics Data System (ADS)

Gailevicius, D.; Koliadenko, V.; Purlys, V.; Peckus, M.; Taranenko, V.; Staliunas, K.

2017-02-01

The microchip lasers, being sources of coherent light, suffer from one serious drawback: low spatial quality of the beam, strongly reducing the brightness of emitted radiation. Attempts to improve the beam quality, such as pump-beam guiding, external feedback, either strongly reduce the emission power, or drastically increase the size and complexity of the lasers. Here we propose that specially designed photonic crystal in the cavity of a microchip laser, can significantly improve the beam quality. We experimentally show that a microchip laser, due to spatial filtering functionality of intracavity photonic crystal, improves the beam quality factor M2 reducing it by factor of 2, and thus increase the brightness of radiation by a factor of 4. This comprises a new kind of laser, the "photonic crystal microchip laser", a very compact and efficient light source emitting high spatial high brightness radiation.

Photonic Crystal Microchip Laser.

PubMed

Gailevicius, Darius; Koliadenko, Volodymyr; Purlys, Vytautas; Peckus, Martynas; Taranenko, Victor; Staliunas, Kestutis

2016-09-29

The microchip lasers, being very compact and efficient sources of coherent light, suffer from one serious drawback: low spatial quality of the beam strongly reducing the brightness of emitted radiation. Attempts to improve the beam quality, such as pump-beam guiding, external feedback, either strongly reduce the emission power, or drastically increase the size and complexity of the lasers. Here it is proposed that specially designed photonic crystal in the cavity of a microchip laser, can significantly improve the beam quality. Experiments show that a microchip laser, due to spatial filtering functionality of intracavity photonic crystal, improves the beam quality factor M 2 reducing it by a factor of 2, and increase the brightness of radiation by a factor of 3. This comprises a new kind of laser, the "photonic crystal microchip laser", a very compact and efficient light source emitting high spatial quality high brightness radiation.

Blue diode laser: a new approach in oral surgery?

NASA Astrophysics Data System (ADS)

Fornaini, Carlo; Merigo, Elisabetta; Selleri, Stefano; Cucinotta, Annamaria

2016-02-01

The introduction of diode lasers in dentistry had several advantages, principally consisting on the reduced size, reduced cost and possibility to beam delivering by optical fibbers. Up today two diode wavelengths, 810 and 980 nm, were the most utilized in oral surgery but recently a new wavelength emitting in the blue had been proposed. The aim of this ex vivo study was to compare the efficacy of five laser wavelengths (450, 532, 808, 1064 and 1340 nm) for the ablation of soft tissues. Specimens were surgically collected from the dorsal surface of four bovine tongues and irradiated by the five different wavelengths. Thermal increase was measured by two thermocouples, the first at a depth of 0.5 mm, and the second at a depth of 2 mm while initial and final surface temperatures were recorded by IR thermometer. The quality of the incision was histologically evaluated by a pathologist by giving a score from 0 to 5. The time necessary to perform the excision varied between 215 seconds (1340 nm, 5W) and 292 seconds (808 nm, 3W). Surface temperature increase was highest for 1340 nm, 5W and lowest for 405 nm, 4 W. The most significant deep temperature increase was recorded by 1340 nm, 5 W and the lowest by 450 nm, 2 W. The quality of incision was better and the thermal elevation lower in the specimens obtained with shortest laser wavelength (450 nm).

Narrow-stripe broad-area lasers with distributed-feedback surface gratings as brilliant sources for high power spectral beam combining systems

NASA Astrophysics Data System (ADS)

Decker, J.; Crump, P.; Fricke, J.; Wenzel, H.; Maaβdorf, A.; Erbert, G.; Tränkle, G.

2014-03-01

Laser systems based on spectral beam combining (SBC) of broad-area (BA) diode lasers are promising tools for material processing applications. However, the system brightness is limited by the in-plane beam param- eter product, BPP, of the BA lasers, which operate with a BPP of < 3mm-mrad. The EU project BRIDLE (www.bridle.eu) is developing novel diode laser sources for such systems, and several technological advances are sought. For increased system brightness and optimal ber-coupling the diode lasers should operate with reduced BPP and vertical far eld angle (95% power content), μV 95. The resulting diode lasers are fabricated as mini- bars for reduced assembly costs. Gratings are integrated into the mini-bar, with each laser stripe emitting at a different wavelength. In this way, each emitter can be directed into a single bre via low-cost dielectric filters. Distributed-feedback narrow-stripe broad-area (DFB-NBA) lasers are promising candidates for these SBC sys- tems. We review here the design process and performance achieved, showing that DFB-NBA lasers with stripe width, W = 30 μm, successfully cut of higher-order lateral modes, improving BPP. Uniform, surface-etched, 80th-order Bragg gratings are used, with weak gratings essential for high e ciency. To date, such DFB-NBA sources operate with < 50% effciency at output power, Pout < 6 W, with BPP < 1.8 mm-mrad and offV 95 36 . The emission wavelength is about 970 nm and the spectral width is < 0.7 nm (95% power). The BPP is half that of a DFB-BA lasers with W = 90 um. We conclude with a review of options for further performance improvements.

Simulation of Optical Resonators for Vertical-Cavity Surface-Emitting Lasers (vcsel)

NASA Astrophysics Data System (ADS)

Mansour, Mohy S.; Hassen, Mahmoud F. M.; El-Nozahey, Adel M.; Hafez, Alaa S.; Metry, Samer F.

2010-04-01

Simulation and modeling of the reflectivity and transmissivity of the multilayer DBR of VCSEL, as well as inside the active region quantum well are analyzed using the characteristic matrix method. The electric field intensity distributions inside such vertical-cavity structure are calculated. A software program under MATLAB environment is constructed for the simulation. This study was performed for two specific Bragg wavelengths 980 nm and 370 nm for achieving a resonant periodic gain (RPG)

Long-term vacuum tests of single-mode vertical cavity surface emitting laser diodes used for a scalar magnetometer

NASA Astrophysics Data System (ADS)

Hagen, C.; Ellmeier, M.; Piris, J.; Lammegger, R.; Jernej, I.; Magnes, W.; Murphy, E.; Pollinger, A.; Erd, C.; Baumjohann, W.

2017-11-01

Scalar magnetometers measure the magnitude of the magnetic field, while vector magnetometers (mostly fluxgate magnetometers) produce three-component outputs proportional to the magnitude and the direction of the magnetic field. While scalar magnetometers have a high accuracy, vector magnetometers suffer from parameter drifts and need to be calibrated during flight. In some cases, full science return can only be achieved by a combination of vector and scalar magnetometers.

Selective layer disordering in III-nitrides with a capping layer

DOEpatents

Wierer, Jr., Jonathan J.; Allerman, Andrew A.

2016-06-14

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Photonic Devices Based on Surface and Composition-Engineered Infrared Colloidal Nanocrystals

DTIC Science & Technology

2012-01-27

NQD/P3HT solar cells , the need for submicron-phase-separated polymer-NQD blends is therefore expressed by the limiting exciton diffusion length ...P3HT:PbSe are very critical in designing the PM-HJ solar cells : The thickness of P3HT should approximate to the thickness of exciton diffuse length in... cells , luminescent solar concentrators, light emitting diodes, lasers, photonic crystals, CdSe, PbSe, Germanium Jian Xu Pennsylvania State University

Design and Characterization of Optically Pumped Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1992-12-01

technology to make VCSELs (e.g. Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD)) motivated the research in this area over the...Resistances for Current Injected VCSELs 3-14 4.1. Equipment Configuration used for Output Beam Characterization . . . 4-1 4.2. Optical Pump Beam and Focusing...pursued over the past few years because VCSELs have ad- ditional inherent advantages. The VCSEL design exhibits better exit beam quality, is of smaller

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

NASA Technical Reports Server (NTRS)

Savich, Gregory R.; Simons, Rainee N.

2006-01-01

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing inmore » the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.« less

Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

NASA Astrophysics Data System (ADS)

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

2018-03-01

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Nazaruk, D. E.; Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Vasil'ev, A. P.; Gladyshev, A. G.; Pavlov, M. M.; Blokhin, A. A.; Kulagina, M. M.; Vashanova, K. A.; Zadiranov, Yu M.; Fefelov, A. G.; Ustinov, V. M.

2014-12-01

A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range.

First demonstration of green and amber LED-pumped Nd:YAG laser

NASA Astrophysics Data System (ADS)

Tarkashvand, M.; Farahbod, A. H.; Hashemizadeh, S. A.

2018-05-01

For the first time, to the best of our knowledge, a green (520 nm) and amber (592 nm) light emitting diode-pumped Nd:YAG laser is reported. The laser oscillator is a stable semi-planar resonator with a total length of 140 mm. The green (amber) light emitting diode-pumped laser produced a 107 (52) µJ laser energy, at 2.6 (0.7) J electrical pump energy. The oscillator operated at a low repetition rate (about 0.1 Hz) in free-running mode, where the laser spikes were initiated about 210–280 µs after the leading edge of the pump pulse. Moreover, the transverse mode profiles of the resonator, pump absorption efficiency, and optical gain have been studied in some detail.

Light emitting fabric for photodynamic treatment of actinic keratosis

NASA Astrophysics Data System (ADS)

Thecua, E.; Vicentini, C.; Vignion, A.-S.; Lecomte, F.; Deleporte, P.; Mortier, L.; Szeimies, R.-M.; Mordon, S.

2017-02-01

The integration of optical fibers into flexible textile structures, by using knitting or weaving processes can allow the development of flexible light sources. The paper aims to present a new technology: Light Emitting Fabrics (LEF), which can be used for example for PDT of Actinic Keratosis in Dermatology. The predetermined macro-bending of optical fibers, led to a homogeneous side emission of light over the entire surface of the fabric. Tests showed that additional curvatures when applying the LEF on non-planar surfaces had no impact on light delivery and proved that LEF can adapt to the human morphology. The ability of the LEF, coupled with a 635nm LASER source, to deliver a homogeneous light to lesions is currently assessed in a clinical trial for the treatment of AK of the scalp by PDT. The low irradiance and progressive activation of the photosensitizer ensure a pain reduction, compared to discomfort levels experienced by patients during a conventional PDT session.

Gravitational properties of light: The emission of counter-propagating laser pulses from an atom

NASA Astrophysics Data System (ADS)

Rätzel, Dennis; Wilkens, Martin; Menzel, Ralf

2017-04-01

The gravitational field of a laser pulse, although not detectable at the moment, has a special feature which continues to attract attention; cause and effect propagate with the same speed, the speed of light. One particular result of this feature is that the gravitational field of an emitted laser pulse and the gravitational effect of the emitter's energy-momentum change are intimately entangled. In this article, a specific example of an emission process is considered: An atom, modeled as a point mass, emits two counter-propagating pulses. The corresponding curvature and the effect on massive and massless test particles is discussed. A comparison is made with the metric corresponding to a spherically symmetric massive object that isotropically emits radiation; the Vaidya metric.

An efficient continuous-wave 591 nm light source based on sum-frequency mixing of a diode pumped Nd:GdVO4-Nd:CNGG laser

NASA Astrophysics Data System (ADS)

Zhao, Y. D.; Liu, J. H.

2013-08-01

We report a laser architecture to obtain continuous-wave (CW) yellow-orange light sources at the 591 nm wavelength. An 808 nm diode pumped a Nd:GdVO4 crystal emitting at 1063 nm. A part of the pump power was then absorbed by the Nd:CNGG crystal. The remaining pump power was used to pump a Nd:CNGG crystal emitting at 1329 nm. Intracavity sum-frequency mixing at 1063 and 1329 nm was then realized in a LiB3O5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 494 mW at 591 nm with a pump laser diode emitting 17.8 W at 808 nm.

High performance organic distributed Bragg reflector lasers fabricated by dot matrix holography.

PubMed

Wan, Wenqiang; Huang, Wenbin; Pu, Donglin; Qiao, Wen; Ye, Yan; Wei, Guojun; Fang, Zongbao; Zhou, Xiaohong; Chen, Linsen

2015-12-14

We report distributed Bragg reflector (DBR) polymer lasers fabricated using dot matrix holography. Pairs of distributed Bragg reflector mirrors with variable mirror separations are fabricated and a novel energy transfer blend consisting of a blue-emitting conjugated polymer and a red-emitting one is spin-coated onto the patterned substrate to complete the device. Under optical pumping, the device emits sing-mode lasing around 622 nm with a bandwidth of 0.41 nm. The working threshold is as low as 13.5 μJ/cm² (~1.68 kW/cm²) and the measured slope efficiency reaches 5.2%. The distributed feedback (DFB) cavity and the DBR cavity resonate at the same lasing wavelength while the DFB laser shows a much higher threshold. We further show that flexible DBR lasers can be conveniently fabricated through the UV-imprinting technique by using the patterned silica substrate as the mold. Dot matrix holography represents a versatile approach to control the number, the size, the location and the orientation of DBR mirrors, thus providing great flexibility in designing DBR lasers.

Optical property measurements of a novel type of upconverting reporter

NASA Astrophysics Data System (ADS)

Xiao, Xudong; Herring, Michael E.; Haushalter, Jeanne; Lee, Seonkyung; Kalogerakis, Kostas S.; Faris, Gregory W.

2003-07-01

We have recently developed a new type of reporter (upconverting chelate) for biomedical diagnostics. For this reporter, the light is absorbed and emitted by a lanthanide ion, rather than an organic molecule, as is the case for a typical fluorescent dye. These materials do not photobleach and have no autofluorescent background. We focus in this paper on neodymium ions complexed with the familiar chelating agents, EDTA, DPA, DTPA and DOTA. We have performed experimental measurements with one- and two-color laser light excitation for different chelate compounds. The samples are excited using two Nd:YAG-pumped dye laser systems that provide laser light near 587 nm and 800 nm. For one-color excitation, the emitted light depends quadratically on the incident laser power, as expected. Three strongly emitting lines are observed, located near 360 nm, 387 nm, and 417 nm. We observed more efficient upconversion in EDTA although the DPA chelates show comparable ground state absorbance. We have studied the influence of temporal delay between the two laser pulses and obtained the decay lifetime of the first intermediate state in the various chelated compounds.

Characterization of laser-tissue interaction processes by low-boiling emitted substances

NASA Astrophysics Data System (ADS)

Weigmann, Hans-Juergen; Lademann, Juergen; Serfling, Ulrike; Lehnert, W.; Sterry, Wolfram; Meffert, H.

1996-01-01

Main point in this study was the investigation of the gaseous and low-boiling substances produced in the laser plume during cw CO2 laser and XeCl laser irradiation of tissue by gas chromatography (GC)/mass spectrometry. The characteristic emitted amounts of chemicals were determined quantitatively using porcine muscular tissue. The produced components were used to determine the character of the chemical reaction conditions inside the interaction zone. It was found that the temperature, and the water content of the tissue are the main parameter determining kind and amount of the emitted substances. The relative intensity of the GC peak of benzene corresponds to a high temperature inside the interaction area while a relative strong methylbutanal peak is connected with a lower temperature which favors Maillard type reaction products. The water content of the tissue determines the extent of oxidation processes during laser tissue interaction. For that reason the moisture in the tissue is the most important parameter to reduce the emission of harmful chemicals in the laser plume. The same methods of investigation are applicable to characterize the interaction of a controlled and an uncontrolled rf electrosurgery device with tissue. The results obtained with model tissue are in agreement with the situation characteristic in laser surgery.

Diode-laser pumping into the emitting level for efficient lasing of depressed cladding waveguides realized in Nd:YVO4 by the direct femtosecond-laser writing technique.

PubMed

Pavel, Nicolaie; Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian

2014-09-22

Depressed cladding waveguides have been realized in Nd:YVO(4) employing direct writing technique with a femtosecond-laser beam. It was shown that the output performances of such laser devices are improved by the reduction of the quantum defect between the pump wavelength and the laser wavelength. Thus, under the classical pump at 808 nm (i.e. into the (4)F(5/2) level), a 100-μm diameter circular waveguide inscribed in a 0.7-at.% Nd:YVO(4) outputted 1.06-μm laser pulses with 3.0-mJ energy, at 0.30 optical efficiency and slope efficiency of 0.32. The pump at 880 nm (i.e.directly into the (4)F(3/2) emitting level) increased the pulse energy at 3.8 mJ and improved both optical efficiency and slope efficiency at 0.36 and 0.39, respectively. The same waveguide yielded continuous-wave 1.5-W output power at 1.06 μm under the pump at 880 nm. Laser emission at 1.34 μm was also improved using the pump into the (4)F(3/2) emitting level of Nd:YVO(4).

High power diode lasers for solid-state laser pumps

NASA Technical Reports Server (NTRS)

Linden, Kurt J.; Mcdonnell, Patrick N.

1994-01-01

The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

Excimer Lasers In Medicine

NASA Astrophysics Data System (ADS)

Tittel, Frank K.; Saidi, Iyad S.; Pettit, George H.; Wisoff, P. J.; Sauerbrey, Roland A.

1989-06-01

Excimer lasers emit light energy, short optical pulses at ultraviolet wavelengths, that results in a unique laser tissue interaction. This has led to an increasing number of studies into medical applications of these lasers in fields such as ophthalmology, urology, cardiology and neurology.

Isotope separation apparatus and method

DOEpatents

Feldman, Barry J.

1985-01-01

The invention relates to an improved method and apparatus for laser isotope separation by photodeflection. A molecular beam comprising at least two isotopes to be separated intersects, preferably substantially perpendicular to one broad side of the molecular beam, with a laser beam traveling in a first direction. The laser beam is reflected back through the molecular beam, preferably in a second direction essentially opposite to the first direction. Because the molecules in the beam occupy various degenerate energy levels, if the laser beam comprises chirped pulses comprising selected wavelengths, the laser beam will very efficiently excite substantially all unexcited molecules and will cause stimulated emission of substantially all excited molecules of a selected one of the isotopes in the beam which such pulses encounter. Excitation caused by first direction chirped pulses moves molecules of the isotope excited thereby in the first direction. Stimulated emission of excited molecules of the isotope is brought about by returning chirped pulses traveling in the second direction. Stimulated emission moves emitting molecules in a direction opposite to the photon emitted. Because emitted photons travel in the second direction, emitting molecules move in the first direction. Substantial molecular movement of essentially all the molecules containing the one isotope is accomplished by a large number of chirped pulse-molecule interactions. A beam corer collects the molecules in the resulting enriched divergent portions of the beam.

Lateral mode control in edge-emitting lasers with modified mirrors

NASA Astrophysics Data System (ADS)

Payusov, A.; Serin, A.; Mukhin, I.; Shernyakov, Y.; Zadiranov, Y.; Maximov, M.; Gordeev, N.

2017-11-01

We present a study on lateral mode control in edge-emitting lasers with profiled mirror reflectivity. The object was to eliminate high-order lateral modes in conventional ridge-waveguide InAs/InGaAs QD (quantum dot) lasers with the stripe width of 10 μm. We have used a FIB (focused ion beam) technique to selectively etch windows in the AR (anti-reflection) facet coatings in order to introduce extra mirror losses for the high order modes. This approach allowed us to eliminate the first-order mode lasing without deterioration of the laser parameters. We suppose that further optimisation of the laser heterostructure and window designs may lead to a pure lateral single-mode lasing in the broadened ridge waveguides.

Slender tip laser scalpel

DOEpatents

Veligdan, James T.

2004-01-06

A laser scalpel includes a ribbon optical waveguide extending therethrough and terminating at a slender optical cutting tip. A laser beam is emitted along the height of the cutting tip for cutting tissue therealong.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Control of the angular distribution of the radiation emitted by phase-locked laser arrays

NASA Astrophysics Data System (ADS)

Kachurin, O. R.; Lebedev, F. V.; Napartovich, M. A.; Khlynov, M. E.

1991-03-01

A numerical investigation was made of the influence of the number and packing density of a linear array of periodically arranged coherent sources on the efficiency of redistributing the radiation power from the side lobes to the main lobe of the angular distribution of the emitted radiation by using a binary phase corrector mounted in the image-doubling plane. The results are given of experimental investigations of a new device for improving the radiation pattern of phase-locked laser arrays.

Cavity Solitons in Vertical Cavity Surface Emitting Lasers and their Applications

NASA Astrophysics Data System (ADS)

Giudici, Massimo; Pedaci, Francesco; Caboche, Emilie; Genevet, Patrice; Barland, Stephane; Tredicce, Jorge; Tissoni, Giovanna; Lugiato, Luigi

Cavity solitons (CS) are single peak localized structures which form over a homogeneous background in the section of broad-area non linear resonator driven by a coherent holding beam. They can be switched on and off by shining a writing/ erasing local laser pulse into the optical cavity. Moreover, when a phase or amplitude gradient is introduced in the holding beam, CS are set in motion along the gradient with a speed that depends on gradient strength. The ability to address CS and to control their location as well as their motion makes them interesting for alloptical processing units. In this chapter we report on several functionalities of CS that have been experimentally implemented in a Vertical Cavity Surface Emitting Laser (VCSEL) biased below threshold. We show that CS positions in the transverse section of the resonator can be reconfigured according to a phase landscape introduced in the holding beam. CS drifting propelled by a phase gradient in the holding beam can be used for realizing an all-optical delay line. Information bits are written in form of CS at a point of the device and a time delayed version of the written information can be read elsewhere along the gradient direction. CS existence and functionalities are deeply affected by presence of device defects generated during the fabrication process and randomly distributed through the device section. The sensitivity of CS to parameters gradients can be used to probe these defects, otherwise not detectable, and mapping their positions. Finally, a periodic flow of moving CS can be obtained by the interplay between a device defect and an external parameter gradient. This suggests the possibility of engineering a CS source directly onto the device.

Red vertical cavity surface emitting lasers (VCSELs) for consumer applications

NASA Astrophysics Data System (ADS)

Duggan, Geoffrey; Barrow, David A.; Calvert, Tim; Maute, Markus; Hung, Vincent; McGarvey, Brian; Lambkin, John D.; Wipiejewski, Torsten

2008-02-01

There are many potential applications of visible, red (650nm - 690nm) vertical cavity surface emitting lasers (VCSELs) including high speed (Gb) communications using plastic optical fiber (POF), laser mouse sensors, metrology, position sensing. Uncertainty regarding the reliability of red VCSELs has long been perceived as the most significant roadblock to their commercialization. In this paper we will present data on red VCSELs optimized for performance and reliability that will allow exploitation of this class of VCSEL in a wide range of high volume consumer, communication and medical applications. VCSELs operating at ~665nm have been fabricated on 4" GaAs substrates using MOCVD as the growth process and using standard VCSEL processing technology. The active region is AlGaInP-based and the DBR mirrors are made from AlGaAs. Threshold currents are typically less than 2mA, the devices operate up to >60C and the light output is polarized in a stable, linear characteristic over all normal operating conditions. The 3dB modulation bandwidth of the devices is in excess of 3GHz and we have demonstrated the operation of a transceiver module operating at 1.25Gb/s over both SI-POF and GI-POF. Ageing experiments carried out using a matrix of current and temperature stress conditions allows us to estimate that the time to failure of 1% of devices (TT1%F) is over 200,000h for reasonable use conditions - making these red VCSELs ready for commercial exploitation in a variety of consumer-type applications. Experiments using appropriate pulsed driving conditions have resulted in operation of 665nm VCSELs at a temperature of 85°C whilst still offering powers useable for eye-safe free space and POF communications.

Modeling bistatic spectral measurements of temporally evolving reflected and emitted energy from a distant and receding target

NASA Astrophysics Data System (ADS)

Cusumano, Salvatore J.; Fiorino, Steven T.; Bartell, Richard J.; Krizo, Matthew J.; Bailey, William F.; Beauchamp, Rebecca L.; Marciniak, Michael A.

2011-01-01

The Air Force Institute of Technology's Center for Directed Energy developed the High Energy Laser End-to-End Operational Simulation (HELEEOS) model in part to quantify the performance variability in laser propagation created by the natural environment during dynamic engagements. As such, HELEEOS includes a fast-calculating, first principles, worldwide surface-to-100 km, atmospheric propagation, and characterization package. This package enables the creation of profiles of temperature, pressure, water vapor content, optical turbulence, atmospheric particulates, and hydrometeors as they relate to line-by-line layer transmission, path, and background radiance at wavelengths from the ultraviolet to radio frequencies. In the current paper an example of a unique high fidelity simulation of a bistatic, time-varying five band multispectral remote observation of energy delivered on a distant and receding test object is presented for noncloudy conditions with aerosols. The multispectral example emphasizes atmospheric effects using HELEEOS, the interaction of the energy and the test object, the observed reflectance, and subsequent hot spot generated. A model of a sensor suite located on the surface is included to collect the diffuse reflected in-band laser radiation and the emitted radiance of the hot spot in four separate and spatially offset midwave infrared and longwave infrared bands. Particular care is taken in modeling the bidirectional reflectance distribution function of the delivered energy/target interaction to account for both the coupling of energy into the test object and the changes in reflectance as a function of temperature. The architecture supports any platform-target-observer geometry, geographic location, season, and time of day, and it provides for correct contributions of the sky-earth background. The simulation accurately models the thermal response, kinetics, turbulence, base disturbance, diffraction, and signal-to-noise ratios.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-10-01

We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be <1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with <1 nm RMS roughness. To achieve <1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of <1 nm, along with a high transparency (˜90% at 405 nm) and low resistivity (˜2 × 10-4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs.