Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jing; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Jiang, Desheng

2015-03-15

The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg{sub Ga} acceptors and passivating donor defects. A decrease in p-type resistivity when O{sub 2} is introduced during the postannealing process is attributed to the fact that annealing in an O{sub 2}-containing environment can enhance the dissociation of Mg{sub Ga}-H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donormore » species and passivate them, leading to the positive effect of reduced compensation.« less

Hydrogen passivation and multiple hydrogen-Hg vacancy complex impurities (nH-VHg, n = 1,2,3,4) in Hg0.75Cd0.25Te

NASA Astrophysics Data System (ADS)

Xue, L.; Tang, D. H.; Qu, X. D.; Sun, L. Z.; Lu, Wei; Zhong, J. X.

2011-09-01

Using first-principles method within the framework of the density functional theory, we study the formation energies and the binding energies of multiple hydrogen-mercury vacancy complex impurities (nH-VHg, n = 1,2,3,4) in Hg0.75Cd0.25Te. We find that, when mercury vacancies exist in Hg0.75Cd0.25Te, the formation of the complex impurity between H and VHg (1H-VHg) is easy and its binding energy is up to 0.56 eV. In this case, the deep acceptor level of mercury vacancy is passivated. As the hydrogen concentration increases, we find that the complex impurity between VHg and two hydrogen atoms (2H-VHg) is more stable than 1H-VHg. This complex passivates both the two acceptor levels introduced by mercury vacancy and neutralizes the p-type dopant characteristics of VHg in Hg0.75Cd0.25Te. Moreover, we find that the complex impurities formed by one VHg and three or four H atoms (3H-VHg, 4H-VHg) are still stable in Hg0.75Cd0.25Te, changing the VHg doped p-type Hg0.75Cd0.25Te to n-type material.

Impurity gettering in semiconductors

DOEpatents

Sopori, B.L.

1995-06-20

A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

Impurity gettering in semiconductors

DOEpatents

Sopori, Bhushan L.

1995-01-01

A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, T.Q.; Buczkowski, A.; Radzimski, Z.J.

The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit dislocations, which were not visible initially, were subsequently activated either by an unknown processing contaminant or a backside metallic impurity. Passivation of these contaminated dislocations was then studied using low energy deuterium ion implantation in a Kaufman ion source. EBIC results show that the recombination activity of the decorated misfit dislocations was dramatically reduced by the deuterium treatment. Although a front side passivation treatment was more effective than amore » backside treatment, a surface ion bombardment damage problem is still evident. 5 refs., 3 figs.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vörös, Márton; Brawand, Nicholas P.; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial formore » charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Lastly, our findings suggest that postsynthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films.« less

Effects of Surface Passivation on Gliding Motility Assays

DTIC Science & Technology

2011-06-03

alpha and beta, is structurally very different. It is a glycoprotein and is thought to stabilize the casein micelle [20,44,45] by sterically hindering...the aggregation of too many casein sub- micelles . It did not support motility in a very consistent manner as can be seen from Figure 1C&D. As was the...between alpha and whole casein was not due to impurities but rather that it was due to how kinesin was supported by the casein micelles or, how casein

Advanced Passivation Technology and Loss Factor Minimization for High Efficiency Solar Cells.

PubMed

Park, Cheolmin; Balaji, Nagarajan; Jung, Sungwook; Choi, Jaewoo; Ju, Minkyu; Lee, Seunghwan; Kim, Jungmo; Bong, Sungjae; Chung, Sungyoun; Lee, Youn-Jung; Yi, Junsin

2015-10-01

High-efficiency Si solar cells have attracted great attention from researchers, scientists, photovoltaic (PV) industry engineers for the past few decades. With thin wafers, surface passivation becomes necessary to increase the solar cells efficiency by overcoming several induced effects due to associated crystal defects and impurities of c-Si. This paper discusses suitable passivation schemes and optimization techniques to achieve high efficiency at low cost. SiNx film was optimized with higher transmittance and reduced recombination for using as an effective antireflection and passivation layer to attain higher solar cell efficiencies. The higher band gap increased the transmittance with reduced defect states that persisted at 1.68 and 1.80 eV in SiNx films. The thermal stability of SiN (Si-rich)/SiN (N-rich) stacks was also studied. Si-rich SiN with a refractive index of 2.7 was used as a passivation layer and N-rich SiN with a refractive index of 2.1 was used for thermal stability. An implied Voc of 720 mV with a stable lifetime of 1.5 ms was obtained for the stack layer after firing. Si-N and Si-H bonding concentration was analyzed by FTIR for the correlation of thermally stable passivation mechanism. The passivation property of spin coated Al2O3 films was also investigated. An effective surface recombination velocity of 55 cm/s with a high density of negative fixed charges (Qf) on the order of 9 x 10(11) cm(-2) was detected in Al2O3 films.

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

NASA Astrophysics Data System (ADS)

Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

2014-09-01

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

DOE PAGES

Vörös, Márton; Brawand, Nicholas P.; Galli, Giulia

2016-11-15

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial formore » charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Lastly, our findings suggest that postsynthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films.« less

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

NASA Astrophysics Data System (ADS)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Back-side hydrogenation technique for defect passivation in silicon solar cells

DOEpatents

Sopori, Bhushan L.

1994-01-01

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

Back-side hydrogenation technique for defect passivation in silicon solar cells

DOEpatents

Sopori, B.L.

1994-04-19

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savinov, S. V.; Oreshkin, A. I., E-mail: oreshkin@spmlab.phys.msu.su, E-mail: oreshkin@spmlab.ru; Oreshkin, S. I.

2015-06-15

We numerically model the Ge(111)-(2 × 1) surface electronic properties in the vicinity of a P donor impurity atom located near the surface. We find a notable increase in the surface local density of states (LDOS) around the surface dopant near the bottom of the empty surface state band π*, which we call a split state due to its limited spatial extent and energetic position inside the band gap. We show that despite the well-established bulk donor impurity energy level position at the very bottom of the conduction band, a surface donor impurity on the Ge(111)-(2 × 1) surface mightmore » produce an energy level below the Fermi energy, depending on the impurity atom local environment. It is demonstrated that the impurity located in subsurface atomic layers is visible in a scanning tunneling microscope (STM) experiment on the Ge(111)-(2 × 1) surface. The quasi-1D character of the impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of the impurity atom. We elaborate a model that allows classifying atoms on the experimental low-temperature STM image. We show the presence of spatial oscillations of the LDOS by the density-functional theory method.« less

The effects of surface pretreatment and nitrogen tetroxide purification on the corrosion rate of Type 304L stainless steel

NASA Technical Reports Server (NTRS)

Blue, G. D.; Moran, C. M.

1985-01-01

Corrosion rates of 304L stainless steel coupons in MON-1 oxidizer have been measured as a function of cleaning procedures employed, surface layer positions, propellant impurity levels, and short-term exposure durations (14 to 90 days). Of special interest was propellant contamination by buildup of soluble iron, which may cause flow decay. Surface treatments employed were combinations of cleaning, pickling, and passivation procedures. Propellants used were MIL-SPEC MON-1 and several types of purified NTO (i.e., low water, low chloride) which may, at a later time, be specified as spacecraft grade. Pretest coupon surface analysis by X-ray photoelectron spectroscopy (XPS-ESCA) has revealed important differences, for the different cleaning procedures, in the make-up of the surface layer, both in composition and state of chemical combination of the elements involved. Comparisons will be made of XPS/ESCA data, for different cleaning procedures, for specimens before and after propellant exposure.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

NASA Astrophysics Data System (ADS)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Electrocatalytic transformation of HF impurity to H 2 and LiF in lithium-ion batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strmcnik, Dusan; Castelli, Ivano E.; Connell, Justin G.

The formation of solid electrolyte interphase on graphite anodes plays a key role in the efficiency of Li-ion batteries. However, to date, fundamental understanding of the formation of LiF as one of the main solid electrolyte interphase components in hexafluorophosphate-based electrolytes remains elusive. In this paper, we present experimental and theoretical evidence that LiF formation is an electrocatalytic process that is controlled by the electrochemical transformation of HF impurity to LiF and H 2. Although the kinetics of HF dissociation and the concomitant production of LiF and H 2 is dependent on the structure and nature of surface atoms, themore » underlying electrochemistry is the same. The morphology, and thus the role, of the LiF formed is strongly dependent on the nature of the substrate and HF inventory, leading to either complete or partial passivation of the interface. Finally, our finding is of general importance and may lead to new opportunities for the improvement of existing, and design of new, Li-ion technologies.« less

Electrocatalytic transformation of HF impurity to H 2 and LiF in lithium-ion batteries

DOE PAGES

Strmcnik, Dusan; Castelli, Ivano E.; Connell, Justin G.; ...

2018-04-09

The formation of solid electrolyte interphase on graphite anodes plays a key role in the efficiency of Li-ion batteries. However, to date, fundamental understanding of the formation of LiF as one of the main solid electrolyte interphase components in hexafluorophosphate-based electrolytes remains elusive. In this paper, we present experimental and theoretical evidence that LiF formation is an electrocatalytic process that is controlled by the electrochemical transformation of HF impurity to LiF and H 2. Although the kinetics of HF dissociation and the concomitant production of LiF and H 2 is dependent on the structure and nature of surface atoms, themore » underlying electrochemistry is the same. The morphology, and thus the role, of the LiF formed is strongly dependent on the nature of the substrate and HF inventory, leading to either complete or partial passivation of the interface. Finally, our finding is of general importance and may lead to new opportunities for the improvement of existing, and design of new, Li-ion technologies.« less

Detection of surface impurity phases in high T.sub.C superconductors using thermally stimulated luminescence

DOEpatents

Cooke, D. Wayne; Jahan, Muhammad S.

1989-01-01

Detection of surface impurity phases in high-temperature superconducting materials. Thermally stimulated luminescence has been found to occur in insulating impurity phases which commonly exist in high-temperature superconducting materials. The present invention is sensitive to impurity phases occurring at a level of less than 1% with a probe depth of about 1 .mu.m which is the region of interest for many superconductivity applications. Spectroscopic and spatial resolution of the emitted light from a sample permits identification and location of the impurity species. Absence of luminescence, and thus of insulating phases, can be correlated with low values of rf surface resistance.

Passive particle dosimetry. [silver halide crystal growth

NASA Technical Reports Server (NTRS)

Childs, C. B.

1977-01-01

Present methods of dosimetry are reviewed with emphasis on the processes using silver chloride crystals for ionizing particle dosimetry. Differences between the ability of various crystals to record ionizing particle paths are directly related to impurities in the range of a few ppm (parts per million). To understand the roles of these impurities in the process, a method for consistent production of high purity silver chloride, and silver bromide was developed which yields silver halides with detectable impurity content less than 1 ppm. This high purity silver chloride was used in growing crystals with controlled doping. Crystals were grown by both the Czochalski method and the Bridgman method, and the Bridgman grown crystals were used for the experiments discussed. The distribution coefficients of ten divalent cations were determined for the Bridgman crystals. The best dosimeters were made with silver chloride crystals containing 5 to 10 ppm of lead; other impurities tested did not produce proper dosimeters.

Morphological transitions in nanoscale patterns produced by concurrent ion sputtering and impurity co-deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley, R. Mark

2016-04-07

We modify the theory of nanoscale patterns produced by ion bombardment with concurrent impurity deposition to take into account the effect that the near-surface impurities have on the collision cascades. As the impurity concentration is increased, the resulting theory successively yields a flat surface, a rippled surface with its wavevector along the projected direction of ion incidence, and a rippled surface with its wavevector rotated by 90°. Exactly the same morphological transitions were observed in recent experiments in which silicon was bombarded with an argon ion beam and gold was co-deposited [Moon et al., e-print arXiv:1601.02534].

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Removing CO2 and moisture from air

NASA Technical Reports Server (NTRS)

Tepper, E. H.

1977-01-01

Foamed-aluminum blocks act as passive heat exchanger to improve efficiency. Improved closed-cycle atmospheric scrubber, level of carbon dioxide, and water vapor are reduced without affecting temperature of airstream. Exchangers draw impurities from air without additional heaters of auxillary equipment.

The Effects of Impurities on Protein Crystal Growth and Nucleation: A Preliminary Study

NASA Technical Reports Server (NTRS)

Schall, Constance A.

1998-01-01

Kubota and Mullin (1995) devised a simple model to account for the effects of impurities on crystal growth of small inorganic and organic molecules in aqueous solutions. Experimentally, the relative step velocity and crystal growth of these molecules asymptotically approach zero or non-zero values with increasing concentrations of impurities. Alternatively, the step velocity and crystal growth can linearly approach zero as the impurity concentration increases. The Kubota-Mullin model assumes that the impurity exhibits Langmuirian adsorption onto the crystal surface. Decreases in step velocities and subsequent growth rates are related to the fractional coverage (theta) of the crystal surface by adsorbed impurities; theta = Kx / (I +Kx), x = mole fraction of impurity in solution. In the presence of impurities, the relative step velocity, V/Vo, and the relative growth rate of a crystal face, G/Go, are proposed to conform to the following equations: V/Vo approx. = G/Go = 1 - (alpha)(theta). The adsorption of impurity is assumed to be rapid and in quasi-equilibrium with the crystal surface sites available. When the value of alpha, an effectiveness factor, is one the growth will asymptotically approach zero with increasing concentrations of impurity. At values less than one, growth approaches a non-zero value asymptotically. When alpha is much greater than one, there will be a linear relationship between impurity concentration and growth rates. Kubota and Mullin expect alpha to decrease with increasing supersaturation and shrinking size of a two dimensional nucleus. It is expected that impurity effects on protein crystal growth will exhibit behavior similar to that of impurities in small molecule growth. A number of proteins were added to purified chicken egg white lysozyme, the effect on crystal nucleation and growth assessed.

Surface and Interface Chemistry for Gate Stacks on Silicon

NASA Astrophysics Data System (ADS)

Frank, M. M.; Chabal, Y. J.

This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

The effect of iron and copper impurities on the wettability of sphalerite (110) surface.

PubMed

Simpson, Darren J; Bredow, Thomas; Chandra, Anand P; Cavallaro, Giuseppe P; Gerson, Andrea R

2011-07-15

The effect of impurities in the zinc sulfide mineral sphalerite on surface wettability has been investigated theoretically to shed light on previously reported conflicting results on sphalerite flotation. The effect of iron and copper impurities on the sphalerite (110) surface energy and on the water adsorption energy was calculated with the semi-empirical method modified symmetrically orthogonalized intermediate neglect of differential overlap (MSINDO) using the cyclic cluster model. The effect of impurities or dopants on surface energies is small but significant. The surface energy increases with increasing surface iron concentration while the opposite effect is reported for increasing copper concentration. The effect on adsorption energies is much more pronounced with water clearly preferring to adsorb on an iron site followed by a zinc site, and copper site least favorable. The theoretical results indicate that a sphalerite (110) surface containing iron is more hydrophilic than the undoped zinc sulfide surface. In agreement with the literature, the surface containing copper (either naturally or by activation) is more hydrophobic than the undoped surface. Copyright © 2011 Wiley Periodicals, Inc.

High-frequency EPR of surface impurities on nanodiamond

NASA Astrophysics Data System (ADS)

Peng, Zaili; Stepanov, Viktor; Takahashi, Susumu

Diamond is a fascinating material, hosting nitrogen-vacancy (NV) defect centers with unique magnetic and optical properties. There have been many reports that suggest the existence of paramagnetic impurities near surface of various kinds of diamonds. Electron paramagnetic resonance (EPR) investigation of mechanically crushed nanodiamonds (NDs) as well as detonation NDs revealed g 2 like signals that are attributed to structural defects and dangling bonds near the diamond surface. In this presentation, we investigate paramagnetic impurities in various sizes of NDs using high-frequency (HF) continuous wave (cw) and pulsed EPR spectroscopy. Strong size dependence on the linewidth of HF cw EPR spectra reveals the existence of paramagnetic impurities in the vicinity of the diamond surface. We also study the size dependence of the spin-lattice and spin-spin relaxation times (T1 and T2) of single substitutional nitrogen defects in NDs Significant deviations from the temperature dependence of the phonon-assisted T1 process were observed in the ND samples, and were attributed to the contribution from the surface impurities. This work was supported by the Searle Scholars Program and the National Science Foundation (DMR-1508661 and CHE-1611134).

Hyperspectral, photogrammetric and morphological characterization of surface impurities over the Greenland ice sheet from remote sensing observations

NASA Astrophysics Data System (ADS)

Tedesco, M.; Alexander, P. M.; Briggs, K.; Linares, M.; Mote, T. L.

2016-12-01

The spatial and temporal evolution of surface impurities over the Greenland ice sheet plays a crucial role in modulating the meltwater production in view of the associated feedback on albedo. Recent studies have pointed to a `darkening' of the west portion of the ice sheet with this reduction in albedo likely associated with the increasing presence of surface impurities (e.g., soot, dust) and biological activity (e.g., cryoconite holes, algae, bacteria). Regional climate models currently do not account for the presence, evolution and impact on albedo of such impurities, mostly because the underlying processes driving the spectral and morphological evolution of impurities are poorly known. One for the reasons for this is the lack of hyperspectral and high-spatial resolution data over specific regions of the Greenland ice sheet. To put things in perspective: there is more hyperspectral data at high spatial resolution for the planet Mars than for the Greenland ice sheet. In this presentation, we report the results of an analysis using the few available hyperspectral data collected over Greenland by the HYPERION and AVIRIS sensors, in conjunction with visible (RGB) helicopter-based high resolution images and LANDSAT/WorldView data for characterizing the spectral and morphological evolution of surface impurities and cryoconite holes over western Greenland. The hyperspectral data is used to characterize the abundance of different `endmembers' and the temporal evolution (inter-seasonal and intra-seasonal) of surface impurities composition and concentration. Digital photographs from helicopter are used to characterize the size and distribution of cryoconite holes as a function of elevation and, lastly, LANDSAT/WV images are used to study the evolution of `mysterious' shapes that form as a consequence of the accumulation of impurities and the ice flow.

Application of the MOS C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.

1975-01-01

An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-

Strained-layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K [Albuquerque, NM; Carroll, Malcolm S [Albuquerque, NM; Gin, Aaron [Albuquerque, NM; Marsh, Phillip F [Lowell, MA; Young, Erik W [Albuquerque, NM; Cich, Michael J [Albuquerque, NM

2010-07-13

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Strained layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K; Carroll, Malcolm S; Gin, Aaron; Marsh, Phillip F; Young, Erik W; Cich, Michael J

2012-10-23

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

PubMed

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

NASA Technical Reports Server (NTRS)

Porter, W. A.; Parker, D. L.

1976-01-01

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Ultrasonic dip seal maintenance system

DOEpatents

Poindexter, Allan M.; Ricks, Herbert E.

1978-01-01

A system for removing impurities from the surfaces of liquid dip seals and or wetting the metal surfaces of liquid dip seals in nuclear components. The system comprises an ultrasonic transducer that transmits ultrasonic vibrations along an ultrasonic probe to the metal and liquid surfaces of the dip seal thereby loosening and removing those impurities.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Liquid sodium dip seal maintenance system

DOEpatents

Briggs, Richard L.; Meacham, Sterling A.

1980-01-01

A system for spraying liquid sodium onto impurities associated with liquid dip seals of nuclear reactors. The liquid sodium mixing with the impurities dissolves the impurities in the liquid sodium. The liquid sodium having dissolved and diluted the impurities carries the impurities away from the site thereby cleaning the liquid dip seal and surrounding area. The system also allows wetting of the metallic surfaces of the dip seal thereby reducing migration of radioactive particles across the wetted boundary.

Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components

NASA Astrophysics Data System (ADS)

Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Yeong-Shyung; Cramer, Carolyn N.

Oxidation-resistant alloys find use as interconnect materials, heat exchangers, and gas supply tubing in solid oxide fuel cell (SOFC) systems, especially when operated at temperatures below ∼800 °C. If fueled with synthesis gas derived from coal or biomass, such metallic components could be exposed to impurities contained in those fuel sources. In this study, coupons of ferritic stainless steels Crofer 22 APU and SS 441, austenitic nickel-chromium superalloy Inconel 600, and an alumina-forming high nickel alloy alumel were exposed to synthesis gas containing ≤2 ppm phosphorus, arsenic and antimony, and reaction products were tested. Crofer 22 APU coupons coated with a (Mn,Co) 3O 4 protective layer were also evaluated. Phosphorus was found to be the most reactive. On Crofer 22 APU, the (Mn,Cr) 3O 4 passivation layer reacted to form an Mn-P-O product, predicted to be manganese phosphate from thermochemical calculations, and Cr 2O 3. On SS 441, reaction of phosphorus with (Mn,Cr) 3O 4 led to the formation of manganese phosphate as well as an Fe-P product, predicted from thermochemical calculations to be Fe 3P. Minimal interactions with antimony or arsenic in synthesis gas were limited to Fe-Sb and Fe-As solid solution formation. Though not intended for use on the anode side, a (Mn,Co) 3O 4 spinel coating on Crofer 22 APU reacted with phosphorus in synthesis gas to produce products consistent with Mn 3(PO 4) 2 and Co 2P. A thin Cr 2O 3 passivation layer on Inconel 600 did not prevent the formation of nickel phosphides and arsenides and of iron phosphides and arsenides, though no reaction with Cr 2O 3 was apparent. On alumel, an Al 2O 3 passivation layer rich in Ni did not prevent the formation of nickel phosphides, arsenides, and antimonides, though no reaction with Al 2O 3 occurred. This work shows that unprotected metallic components of an SOFC stack and system can provide a sink for P, As and Sb impurities that may be present in fuel gases, and thus complicate experimental studies of impurity interactions with the anode.

Passivation coating for flexible substrate mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1990-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.

The Active Oxidation of Silicon Carbide

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Myers, Dwight L.

2009-01-01

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.

High temperature corrosion of a nickel base alloy by helium impurities

NASA Astrophysics Data System (ADS)

Rouillard, F.; Cabet, C.; Wolski, K.; Terlain, A.; Tabarant, M.; Pijolat, M.; Valdivieso, F.

2007-05-01

High temperature corrosion properties of Haynes 230 were investigated in a purposely-designed facility under a typical very high temperature reactor (VHTR) impure helium medium. The study was focused on the surface oxide scale formation and its stability at about 1223 K. The alloy developed a Mn/Cr rich oxide layer on its surface under impure helium at 1173 K. Nevertheless, a deleterious reaction destructing the chromium oxide was evidenced above a critical temperature, TA. Reagents and products of this last reaction were investigated.

Surface Changes and Impurity Release Kinetics of Titanium Dioxide Nanoparticles in Aqueous Environment

EPA Science Inventory

Previous studies have found the significant role of impurities (i.e., silicon, phosphorus) in the aggregation and sedimentation of TiO2 nanoparticles in water environment. However, it is not understood whether dissolution of the impurities potentially impacts the environment or t...

Silicon Impurity Release and Surface Transformation of TiO2 Anatase and Rutile Nanoparticles in Water Environments

EPA Science Inventory

Surface transformation can affect the stability, reactivity, and toxicity of titanium dioxide (TiO2) nanoparticles (NPs) when released to water environments. Herein, we investigated the release kinetics of Si impurity frequently introduced during NP synthesis and the resulting ef...

Subsurface segregation of yttria in yttria stabilized zirconia

NASA Astrophysics Data System (ADS)

de Ridder, M.; van Welzenis, R. G.; van der Gon, A. W. Denier; Brongersma, H. H.; Wulff, S.; Chu, W.-F.; Weppner, W.

2002-09-01

The segregation behavior in 3 and 10 mol % polycrystalline yttria stabilized zirconia (YSZ), calcined at temperatures ranging from 300 to 1600 degC, is characterized using low-energy ion scattering (LEIS). In order to be able to separate the Y and Zr LEIS signals, YSZ samples have been prepared using isotopically enriched 94ZrO2 instead of natural zirconia. The samples are made via a special precipitation method at a low temperature. The segregation to the outermost surface layer is dominated by impurities. The increased impurity levels are restricted to this first layer, which underlines the importance of the use of LEIS for this study. For temperatures of 1000 degC and higher, the oxides of the impurities Na, Si, and Ca even cover the surface completely. The performance of a device like the solid oxide fuel cell which has an YSZ electrolyte and a working temperature around 1000 degC, will, therefore, be strongly hampered by these impurities. The reduction of impurities, to prevent accumulation at the surface, will only be effective if the total impurity bulk concentration can be reduced below the 10 ppm level. Due to the presence of the impurities, yttria cannot accumulate in the outermost layer. It does so, in contrast to the general belief, in the subsurface layer and to much higher concentrations than the values reported previously. The difference in the interfacial free energies of Y2O3 and ZrO2 is determined to be -21plus-or-minus3 kJ/mol.

Application of the MOS-C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.

1975-01-01

The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.

Ion Heating During Local Helicity Injection Plasma Startup in the Pegasus ST

NASA Astrophysics Data System (ADS)

Burke, M. G.; Barr, J. L.; Bongard, M. W.; Fonck, R. J.; Hinson, E. T.; Perry, J. M.; Reusch, J. A.

2015-11-01

Plasmas in the Pegasus ST are initiated either through standard, MHD stable, inductive current drive or non-solenoidal local helicity injection (LHI) current drive with strong reconnection activity, providing a rich environment to study ion dynamics. During LHI discharges, a large amount of impurity ion heating has been observed, with the passively measured impurity Ti as high as 800 eV compared to Ti ~ 60 eV and Te ~ 175 eV during standard inductive current drive discharges. In addition, non-thermal ion velocity distributions are observed and appear to be strongest near the helicity injectors. The ion heating is hypothesized to be a result of large-scale magnetic reconnection activity, as the amount of heating scales with increasing fluctuation amplitude of the dominant, edge localized, n =1 MHD mode. An approximate temporal scaling of the heating with the amplitude of higher frequency magnetic fluctuations has also been observed, with large amounts of power spectral density present at several impurity ion cyclotron frequencies. Recent experiments have focused on investigating the impurity ion heating scaling with the ion charge to mass ratio as well as the reconnecting field strength. The ion charge to mass ratio was modified by observing different impurity charge states in similar LHI plasmas while the reconnecting field strength was modified by changing the amount of injected edge current. Work supported by US DOE grant DE-FG02-96ER54375.

Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking.

PubMed

Kim, Won-Jun; Debnath, Pulak C; Lee, Junsu; Lee, Ju Han; Lim, Dae-Soon; Song, Yong-Won

2013-09-13

Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

Poloidal asymmetries in edge transport barriersa)

NASA Astrophysics Data System (ADS)

Churchill, R. M.; Theiler, C.; Lipschultz, B.; Hutchinson, I. H.; Reinke, M. L.; Whyte, D.; Hughes, J. W.; Catto, P.; Landreman, M.; Ernst, D.; Chang, C. S.; Hager, R.; Hubbard, A.; Ennever, P.; Walk, J. R.

2015-05-01

Measurements of impurities in Alcator C-Mod indicate that in the pedestal region, significant poloidal asymmetries can exist in the impurity density, ion temperature, and main ion density. In light of the observation that ion temperature and electrostatic potential are not constant on a flux surface [Theiler et al., Nucl. Fusion 54, 083017 (2014)], a technique based on total pressure conservation to align profiles measured at separate poloidal locations is presented and applied. Gyrokinetic neoclassical simulations with XGCa support the observed large poloidal variations in ion temperature and density, and that the total pressure is approximately constant on a flux surface. With the updated alignment technique, the observed in-out asymmetry in impurity density is reduced from previous publishing [Churchill et al., Nucl. Fusion 53, 122002 (2013)], but remains substantial ( n z , H / n z , L ˜ 6 ). Candidate asymmetry drivers are explored, showing that neither non-uniform impurity sources nor localized fluctuation-driven transport are able to explain satisfactorily the impurity density asymmetry. Since impurity density asymmetries are only present in plasmas with strong electron density gradients, and radial transport timescales become comparable to parallel transport timescales in the pedestal region, it is suggested that global transport effects relating to the strong electron density gradients in the pedestal are the main driver for the pedestal in-out impurity density asymmetry.

Nanorelief of the natural cleavage surface of triglycine sulphate crystals with substitutional and interstitial impurities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belugina, N. V.; Gainutdinov, R. V.; Tolstikhina, A. L., E-mail: alla@ns.crys.ras.ru

2011-11-15

Ferroelectric triglycine sulphate crystals (TGS) with substitutional (LADTGS+ADP, DTGS) and interstitial (Cr) impurities have been studied by atomic-force microscopy, X-ray diffraction, and X-ray fluorescence. The nanorelief parameters of the mirror cleavage TGS(010) surface have been measured with a high accuracy. A correlation between the crystal defect density in the bulk and the cleavage surface nanorelief is revealed at the submicrometer level.

Protecting the surface of a light absorber in a photoanode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Shu; Lewis, Nathan S.

A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.

Effect of homolog doping on surface morphology and mass-loss rates from PETN crystals. Studies using atomic force microscope and thermo-gravimetric analysis

DOE PAGES

Bhattacharya, S. K.; Maiti, A; Gee, R. H.; ...

2012-08-28

Pentaerythritol tetranitrate (PETN) is an important energetic material and its performance as a secondary explosive depends strongly on the density as well as flow porosity of powdered material, which in turn is governed by the size and surface properties of the PETN crystallite particles. Historically there has been evidence that the surface properties of PETN particles can be strongly influenced by the presence of homolog impurities of PETN, in particular, dipentaerythritol hexanitrate (diPEHN) and tripentaerythritol octanitrate (triPEON), although not many systematic studies characterizing such influence exist. In this work we employ thermogravimetric analysis (TGA) to measure mass-loss rates at elevatedmore » temperatures and show that doping with a small amount of diPEHN and triPEON can reduce the mass-loss rate from PETN single-crystal surfaces by as much as 35 % as compared to undoped crystals. Arrhenius plots of mass-loss rates as a function of temperature suggest that the reduction in evaporation is not due to the change in activation barrier of the molecular evaporation process, but perhaps due to the impedance to the receding motion of the steps by the immobile impurities on the surface. Removal of surface impurities through gentle washing with ethanol leads to enhanced mass-loss rate relative to pure PETN suggesting a roughened surface morphology. Some surface roughening in doped crystals is supported by Atomic force microscopy (AFM) images of growth layers that show evidences of growth layer stacking and rough edges. Furthermore, we find that a larger amount of impurity added to the original solution does not necessarily lead to a more highly doped crystal, which could perhaps be interpreted as PETN crystals being able to accommodate only up to a certain weight percent of homolog impurities.« less

Quantum impurity models for magnetic adsorbates on superconductor surfaces

NASA Astrophysics Data System (ADS)

Žitko, Rok

2018-05-01

Magnetic atoms adsorbed on surfaces have a quenched orbital moment while their ground-state spin multiplet is partially split as a consequence of the spin-orbit coupling which, even if intrinsically weak, has a large effect due to the abrupt change of the potential at the surface. Such metal adsorbates should be modelled using quantum impurity models that include the relevant internal degrees of freedom and the interaction terms, in particular the magnetic anisotropy and the Kondo exchange coupling. When adsorbed on superconducting surfaces, these impurities have complex spectra of sub-gap excitations due to magnetic anisotropy splitting and Kondo screening. Both anisotropy splitting and Zeeman splitting due to the external magnetic field are significantly renormalized by the coupling to the substrate electrons. In this work I discuss the quantum-to-classical crossover and the applicability of classical static-local-spin picture for discussing magnetic nanostructures on superconductors.

Algae Drive Enhanced Darkening of Bare Ice on the Greenland Ice Sheet

NASA Astrophysics Data System (ADS)

Stibal, Marek; Box, Jason E.; Cameron, Karen A.; Langen, Peter L.; Yallop, Marian L.; Mottram, Ruth H.; Khan, Alia L.; Molotch, Noah P.; Chrismas, Nathan A. M.; Calı Quaglia, Filippo; Remias, Daniel; Smeets, C. J. P. Paul; van den Broeke, Michiel R.; Ryan, Jonathan C.; Hubbard, Alun; Tranter, Martyn; van As, Dirk; Ahlstrøm, Andreas P.

2017-11-01

Surface ablation of the Greenland ice sheet is amplified by surface darkening caused by light-absorbing impurities such as mineral dust, black carbon, and pigmented microbial cells. We present the first quantitative assessment of the microbial contribution to the ice sheet surface darkening, based on field measurements of surface reflectance and concentrations of light-absorbing impurities, including pigmented algae, during the 2014 melt season in the southwestern part of the ice sheet. The impact of algae on bare ice darkening in the study area was greater than that of nonalgal impurities and yielded a net albedo reduction of 0.038 ± 0.0035 for each algal population doubling. We argue that algal growth is a crucial control of bare ice darkening, and incorporating the algal darkening effect will improve mass balance and sea level projections of the Greenland ice sheet and ice masses elsewhere.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Information storage medium and method of recording and retrieving information thereon

DOEpatents

Marchant, D. D.; Begej, Stefan

1986-01-01

Information storage medium comprising a semiconductor doped with first and second impurities or dopants. Preferably, one of the impurities is introduced by ion implantation. Conductive electrodes are photolithographically formed on the surface of the medium. Information is recorded on the medium by selectively applying a focused laser beam to discrete regions of the medium surface so as to anneal discrete regions of the medium containing lattice defects introduced by the ion-implanted impurity. Information is retrieved from the storage medium by applying a focused laser beam to annealed and non-annealed regions so as to produce a photovoltaic signal at each region.

Dispersion analysis of passive surface-wave noise generated during hydraulic-fracturing operations

USGS Publications Warehouse

Forghani-Arani, Farnoush; Willis, Mark; Snieder, Roel; Haines, Seth S.; Behura, Jyoti; Batzle, Mike; Davidson, Michael

2014-01-01

Surface-wave dispersion analysis is useful for estimating near-surface shear-wave velocity models, designing receiver arrays, and suppressing surface waves. Here, we analyze whether passive seismic noise generated during hydraulic-fracturing operations can be used to extract surface-wave dispersion characteristics. Applying seismic interferometry to noise measurements, we extract surface waves by cross-correlating several minutes of passive records; this approach is distinct from previous studies that used hours or days of passive records for cross-correlation. For comparison, we also perform dispersion analysis for an active-source array that has some receivers in common with the passive array. The active and passive data show good agreement in the dispersive character of the fundamental-mode surface-waves. For the higher mode surface waves, however, active and passive data resolve the dispersive properties at different frequency ranges. To demonstrate an application of dispersion analysis, we invert the observed surface-wave dispersion characteristics to determine the near-surface, one-dimensional shear-wave velocity.

Oscillating-Crucible Technique for Silicon Growth

NASA Technical Reports Server (NTRS)

Daud, T.; Dumas, K. A.; Kim, K. M.; Schwuttke, G. H.; Smetana, P.

1984-01-01

Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.

APPARATUS FOR THE PURIFICATION OF CALCIUM

DOEpatents

Burnett, R.L.

1953-08-25

The present patent claims and describes an apparatus adapted to carry out a new process for the purification of calcium containing an alkali metal as impurity. The process consists of distilling the impure caldium in the presence of an inert gas and at a reduced pressure, condensing substantially pure calcium on a condensing surface of iron or a ferrous alloy and condensing the alkali metal on a separate surface, the two condensing surfaces being maintained at suitable temperatures by separate cooling means.

Calculations of neoclassical impurity transport in stellarators

NASA Astrophysics Data System (ADS)

Mollén, Albert; Smith, Håkan M.; Langenberg, Andreas; Turkin, Yuriy; Beidler, Craig D.; Helander, Per; Landreman, Matt; Newton, Sarah L.; García-Regaña, José M.; Nunami, Masanori

2017-10-01

The new stellarator Wendelstein 7-X has finished the first operational campaign and is restarting operation in the summer 2017. To demonstrate that the stellarator concept is a viable candidate for a fusion reactor and to allow for long pulse lengths of 30 min, i.e. ``quasi-stationary'' operation, it will be important to avoid central impurity accumulation typically governed by the radial neoclassical transport. The SFINCS code has been developed to calculate neoclassical quantities such as the radial collisional transport and the ambipolar radial electric field in 3D magnetic configurations. SFINCS is a cutting-edge numerical tool which combines several important features: the ability to model an arbitrary number of kinetic plasma species, the full linearized Fokker-Planck collision operator for all species, and the ability to calculate and account for the variation of the electrostatic potential on flux surfaces. In the present work we use SFINCS to study neoclassical impurity transport in stellarators. We explore how flux-surface potential variations affect the radial particle transport, and how the radial electric field is modified by non-trace impurities and flux-surface potential variations.

Adsorption mechanisms of the nonequilibrium incorporation of admixtures in a growing crystal

NASA Astrophysics Data System (ADS)

Franke, V. D.; Punin, Yu. O.; Smetannikova, O. G.; Kenunen, D. S.

2007-12-01

The nonequilibrium partition of components between a crystal and solution is mainly controlled by impurity adsorption on the surface of the growing crystal. The specificity of adsorption on the faces of various simple forms leads to the sectorial zoning of crystals. This effect was studied experimentally for several crystallizing systems with different impurities, including isomorphous, 2d-isomorphous, and nonisomorphous, readily adsorbed impurities. In all systems, the sectorial selectivity of impurity incorporation into host crystals has been detected with partition coefficients many times higher than in the case of equilibrium partition. Specific capture of impurities by certain faces is accompanied by inhibition of their growth and modification of habit. The decrease in nonequilibrium partition coefficients with degree of oversaturation provides entrapment of impurities in the growing crystals. Thereby, the adsorption mechanism works in much the same mode for impurities of quite different nature. The behavior of partition coefficient differs drastically from impurity capturing by diffusion mechanism.

Differential auger spectrometry

DOEpatents

Strongin, Myron; Varma, Matesh Narayan; Anne, Joshi

1976-06-22

Differential Auger spectroscopy method for increasing the sensitivity of micro-Auger spectroanalysis of the surfaces of dilute alloys, by alternately periodically switching an electron beam back and forth between an impurity free reference sample and a test sample containing a trace impurity. The Auger electrons from the samples produce representative Auger spectrum signals which cancel to produce an Auger test sample signal corresponding to the amount of the impurity in the test samples.

Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

NASA Technical Reports Server (NTRS)

Weinberg, I.; Hsu, L. C.

1977-01-01

Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

Estimating the entropy and quantifying the impurity of a swarm of surface-hopping trajectories: A new perspective on decoherence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Wenjun; Subotnik, Joseph E., E-mail: subotnik@sas.upenn.edu

2014-05-28

In this article, we consider the intrinsic entropy of Tully's fewest switches surface hopping (FSSH) algorithm (as estimated by the impurity of the density matrix) [J. Chem. Phys. 93, 1061 (1990)]. We show that, even for a closed system, the total impurity of a FSSH calculation increases in time (rather than stays constant). This apparent failure of the FSSH algorithm can be traced back to an incorrect, approximate treatment of the electronic coherence between wavepackets moving along different potential energy surfaces. This incorrect treatment of electronic coherence also prevents the FSSH algorithm from correctly describing wavepacket recoherences (which is amore » well established limitation of the FSSH method). Nevertheless, despite these limitations, the FSSH algorithm often predicts accurate observables because the electronic coherence density is modulated by a phase factor which varies rapidly in phase space and which often integrates to almost zero. Adding “decoherence” events on top of a FSSH calculation completely destroys the incorrect FSSH electronic coherence and effectively sets the Poincaré recurrence time for wavepacket recoherence to infinity; this modification usually increases FSSH accuracy (assuming there are no recoherences) while also offering long-time stability for trajectories. In practice, we show that introducing “decoherence” events does not change the total FSSH impurity significantly, but does lead to more accurate evaluations of the impurity of the electronic subsystem.« less

Improvement and formation of UV-induced damage on LBO crystal surface during long-term high-power third-harmonic generation.

PubMed

Hong, Hailong; Liu, Qiang; Huang, Lei; Gong, Mali

2013-03-25

We demonstrate the improvement and formation of UV-induced damage on LBO crystal output surface during long-term (130 h) high-power (20 W) high-repetition-rate (80 kHz) third-harmonic generation. The output surface was super-polished (RMS surface roughness <0.6 nm) to sub-nanometer scale super smooth roughness. The surface lifetime has been improved more than 20-fold compared with the as-polished ones (RMS surface roughness 4.0~8.0 nm). The damage could be attributed to the consequence of thermal effects resulted from impurity absorptions. Simultaneously, it was verified that the impurities originated in part from the UV-induced deposition.

Laboratory measurements of ice tensile strength dependence on density and concentration of silicate and polymer impurities at low temperatures

NASA Astrophysics Data System (ADS)

Litwin, K. L.; Beyeler, J. D.; Polito, P. J.; Zygielbaum, B. R.; Sklar, L. S.; Collins, G. C.

2009-12-01

The tensile strength of ice bedrock on Titan should strongly influence the effectiveness of the erosional processes responsible for carving the extensive fluvial drainage networks and other surface features visible in images returned by the Cassini and Huygens probes. Recent measurements of the effect of temperature on the tensile strength of low-porosity, polycrystalline ice, without impurities, suggest that ice bedrock at the Titan surface temperature of 93 K may be as much as five times stronger than ice at terrestrial surface temperatures. However, ice bedrock on Titan and other outer solar system bodies may have significant porosity, and impurities such silicates or polymers are possible in such ices. In this laboratory investigation we are exploring the dependence of tensile strength on the density and concentration of impurities, for polycrystalline ice across a wide range of temperatures. We use the Brazilian tensile splitting test to measure strength, and control temperature with dry ice and liquid nitrogen. The 50 mm diameter ice cores are made from a log-normally distributed seed crystal mixture with a median size of 1.4 mm. To control ice density and porosity we vary the packing density of the seed grains in core molds and vary the degree of saturation of the matrix with added near-freezing distilled water. We also vary ice density by blending in a similarly-sized mixture of angular fragments of two types of impurities, a fine-grained volcanic rock and a polyethylene polymer. Because both types of impurities have greater tensile strength than ice at Earth surface temperatures, we expect higher concentrations of impurities to correlate with increased strength for ice-rock and ice-polymer mixtures. However, at the ultra-cold temperatures of the outer planets, we expect significant divergence in the temperature dependence of ice tensile strength for the various mixtures and resulting densities. These measurements will help constrain the range of possible ice tensile strengths that might occur on Titan and other solar system bodies.

Adsorption site analysis of impurity embedded single-walled carbon nanotube bundles

USGS Publications Warehouse

Agnihotri, S.; Mota, J.P.B.; Rostam-Abadi, M.; Rood, M.J.

2006-01-01

Bundle morphology and adsorptive contributions from nanotubes and impurities are studied both experimentally and by simulation using a computer-aided methodology, which employs a small physisorbed probe molecule to explore the porosity of nanotube samples. Grand canonical Monte Carlo simulation of nitrogen adsorption on localized sites of a bundle is carried out to predict adsorption in its accessible internal pore volume and on its external surface as a function of tube diameter. External adsorption is split into the contributions from the clean surface of the outermost nanotubes of the bundle and from the surface of the impurities. The site-specific isotherms are then combined into a global isotherm for a given sample using knowledge of its tube-diameter distribution obtained by Raman spectroscopy. The structural parameters of the sample, such as the fraction of open-ended nanotubes and the contributions from impurities and nanotube bundles to total external surface area, are determined by fitting the experimental nitrogen adsorption data to the simulated isotherm. The degree of closure between experimental and calculated adsorption isotherms for samples manufactured by two different methods, to provide different nanotube morphology and contamination level, further strengthens the validity and resulting interpretations based on the proposed approach. The average number of nanotubes per bundle and average bundle size, within a sample, are also quantified. The proposed method allows for extrapolation of adsorption properties to conditions where the purification process is 100% effective at removing all impurities and opening access to all intrabundle adsorption sites. ?? 2006 Elsevier Ltd. All rights reserved.

Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide

NASA Astrophysics Data System (ADS)

Macco, B.; Bivour, M.; Deijkers, J. H.; Basuvalingam, S. B.; Black, L. E.; Melskens, J.; van de Loo, B. W. H.; Berghuis, W. J. H.; Hermle, M.; Kessels, W. M. M. Erwin

2018-06-01

This letter reports on effective surface passivation of n-type crystalline silicon by ultrathin niobium oxide (Nb2O5) films prepared by atomic layer deposition (ALD) and subjected to a forming gas anneal at 300 °C. A champion recombination parameter J0 of 20 fA/cm2 and a surface recombination velocity Seff of 4.8 cm/s have been achieved for ultrathin films of 1 nm. The surface pretreatment was found to have a strong impact on the passivation. Good passivation can be achieved on both HF-treated c-Si surfaces and c-Si surfaces with a wet-chemically grown interfacial silicon oxide layer. On HF-treated surfaces, a minimum film thickness of 3 nm is required to achieve a high level of surface passivation, whereas the use of a wet chemically-grown interfacial oxide enables excellent passivation even for Nb2O5 films of only 1 nm. This discrepancy in passivation between both surface types is attributed to differences in the formation and stoichiometry of interfacial silicon oxide, resulting in different levels of chemical passivation. On both surface types, the high level of passivation of ALD Nb2O5 is aided by field-effect passivation originating from a high fixed negative charge density of 1-2 × 1012 cm-3. Furthermore, it is demonstrated that the passivation level provided by 1 nm of Nb2O5 can be further enhanced through light-soaking. Finally, initial explorations show that a low contact resistivity can be obtained using Nb2O5-based contacts. Together, these properties make ALD Nb2O5 a highly interesting building block for high-efficiency c-Si solar cells.

Characterization of lunar ferromagnetic phases by the effective linewidth method

NASA Technical Reports Server (NTRS)

Patton, C. E.; Schmidt, H.

1978-01-01

The effective line-width technique, first developed to study the physics of microwave relaxation in ferrites, has been successfully applied to lunar matter. Effective line-width measurements have been made on two selected samples containing disperse spherical metallic iron particles below 40 microns in diam. The data were obtained for fields from 7 to 12 kOe and a temperature range 125 - 300 K. The effective line width was field-independent and temperature-independent at 650 - 750 Oe. The high-field tails of the ferromagnetic resonance absorption were highly Lorentzian. From the relatively large and temperature-independent high-field effective line widths, it appears that (1) the metallic iron phases in lunar soil are rather impure; (2) the impurities are passive, in that there is no evidence for a temperature peak process; and (3) these samples contain no appreciable magnetite.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Sub-molecular modulation of a 4f driven Kondo resonance by surface-induced asymmetry

NASA Astrophysics Data System (ADS)

Warner, Ben; El Hallak, Fadi; Atodiresei, Nicolae; Seibt, Philipp; Prüser, Henning; Caciuc, Vasile; Waters, Michael; Fisher, Andrew J.; Blügel, Stefan; van Slageren, Joris; Hirjibehedin, Cyrus F.

2016-09-01

Coupling between a magnetic impurity and an external bath can give rise to many-body quantum phenomena, including Kondo and Hund's impurity states in metals, and Yu-Shiba-Rusinov states in superconductors. While advances have been made in probing the magnetic properties of d-shell impurities on surfaces, the confinement of f orbitals makes them difficult to access directly. Here we show that a 4f driven Kondo resonance can be modulated spatially by asymmetric coupling between a metallic surface and a molecule containing a 4f-like moment. Strong hybridization of dysprosium double-decker phthalocyanine with Cu(001) induces Kondo screening of the central magnetic moment. Misalignment between the symmetry axes of the molecule and the surface induces asymmetry in the molecule's electronic structure, spatially mediating electronic access to the magnetic moment through the Kondo resonance. This work demonstrates the important role that molecular ligands have in mediating electronic and magnetic coupling and in accessing many-body quantum states.

Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

NASA Astrophysics Data System (ADS)

Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

2016-10-01

Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

Photon-induced electro-chemical processes in airless icy bodies analogues

NASA Astrophysics Data System (ADS)

Marchione, Demian; Gudipati, Murthy

2016-10-01

Previous laboratory studies have shown that radiation-induced ionization of impurities in water-rich ices drives the formation of ionized species resulting in charge generation and accumulation in ices [1-3]. It is expected that some of these impurity ions are decomposed into smaller volatile species and ejected into the vacuum. These processes are relevant to the chemical composition of the near-surface tenuous (thin) atmosphere of icy bodies such as the Jovian satellites like Europa.Our work aims at investigating photocurrents from organic impurity embedded water ices of several microns thick and understanding how these measurements correlate with the desorption of volatiles during UV and electron irradiation. These experiments are performed in an ultrahigh vacuum chamber around Europa's surface temperature (100 - 150 K) conditions using a low-pressure hydrogen flow-discharge lamp emitting primarily at Lyα (121.6 nm), a 2 keV electron source, and a substrate-less electrode. Photoionization of organic impurities in the water matrix results in charge pair (electron and ion) separation within the ice, and hence in detectable currents that are measured as a function of the applied bias and the temperature (5 K - 200 K). Photodesorption products are also identified by a quadrupole mass spectrometer (QMS) and correlated with conductivity measurements. We will discuss these results in the context of expected Europa's surface photoconductivity and near-surface volatile production.References:[1] M. S. Gudipati, and L. J. Allamandola, Astrophysical Journal Letters, 2003, 596(2), L195-L198.[2] M. S. Gudipati, Journal of Physical Chemistry A, 2004, 108(20), 4412-4419.[3] S. H. Cuylle, L. J. Allamandola, and H. Linnartz, Astronomy and Astrophysics, 2014, 562, A22.This work has been carried out at Jet Propulsion Laboratory, California Institute of Technology under a contract with the National Aeronautics and Space Administration, and funded by NASA under Planetary Atmospheres Program Grant "Understanding the Near-Surface Atmospheres of Icy Bodies: Role of Photoionization of Organic Impurities in Icy Surfaces"

Impurity gettering in silicon using cavities formed by helium implantation and annealing

DOEpatents

Myers, Jr., Samuel M.; Bishop, Dawn M.; Follstaedt, David M.

1998-01-01

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer.

Impurity gettering in silicon using cavities formed by helium implantation and annealing

DOEpatents

Myers, S.M. Jr.; Bishop, D.M.; Follstaedt, D.M.

1998-11-24

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.

Adsorption of molecular additive onto lead halide perovskite surfaces: A computational study on Lewis base thiophene additive passivation

NASA Astrophysics Data System (ADS)

Zhang, Lei; Yu, Fengxi; Chen, Lihong; Li, Jingfa

2018-06-01

Organic additives, such as the Lewis base thiophene, have been successfully applied to passivate halide perovskite surfaces, improving the stability and properties of perovskite devices based on CH3NH3PbI3. Yet, the detailed nanostructure of the perovskite surface passivated by additives and the mechanisms of such passivation are not well understood. This study presents a nanoscopic view on the interfacial structure of an additive/perovskite interface, consisting of a Lewis base thiophene molecular additive and a lead halide perovskite surface substrate, providing insights on the mechanisms that molecular additives can passivate the halide perovskite surfaces and enhance the perovskite-based device performance. Molecular dynamics study on the interactions between water molecules and the perovskite surfaces passivated by the investigated additive reveal the effectiveness of employing the molecular additives to improve the stability of the halide perovskite materials. The additive/perovskite surface system is further probed via molecular engineering the perovskite surfaces. This study reveals the nanoscopic structure-property relationships of the halide perovskite surface passivated by molecular additives, which helps the fundamental understanding of the surface/interface engineering strategies for the development of halide perovskite based devices.

Erosion and Retention Properties of Beyllium

NASA Astrophysics Data System (ADS)

Doerner, R.; Grossman, A.; Luckhardt, S.; Serayderian, R.; Sze, F. C.; Whyte, D. G.

1997-11-01

Experiments in PISCES-B have investigated the erosion and hydrogen retention characteristics of beryllium. The sputtering yield is strongly influenced by trace amounts (≈1 percent) of intrinsic plasma impurities. At low sample exposure temperatures (below 250^oC), the beryllium surface remains free of contaminants and a sputtering yield similar to that of beryllium-oxide is measured. At higher exposure temperatures, impurities deposited on the surface can diffuse into the bulk and reduce their chance of subsequent erosion. These impurities form a surface layer mixed with beryllium which exhibits a reduced sputtering yield. Depth profile analysis has determined the composition and chemical bonding of the impurity layer. The hydrogen isotope retention of beryllium under ITER first wall (temperature = 200^oC, ion flux = 1 x 10^21 m-2 s-1) and baffle (temperature = 500^oC, ion flux = 1 x 10^22 m-2 s-1) conditions has been investigated. The retained deuterium saturates above a fluence of 10^23 m-2 at about 4 x 10^20 m-2 for the 200^oC exposure and at 2 x 10^20 m-2 for the 500^oC case. The TMAP code is used to model the deuterium release characteristics.

Presence, segregation and reactivity of H, C and N dissolved in some refractory oxides

NASA Technical Reports Server (NTRS)

Freund, F.

1986-01-01

The sources of impurities, particularly carbon, in high melting oxides and silicates are discussed, along with detection and quantification methods. The impurities are important for their effects on bulk material properties through the media of, e.g., surface or grain boundary characteristics. The impurities are usually encountered by the contact of the oxide (refractory) material with volatiles such as H2O and CO2, which become incorporated in the material and form anion complexes with oxygen acting as a covalent bonded ligand. The specific processes undergone by MgO in assimilating C impurities are delineated, using data obtained with X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry and nuclear reaction profiling. Finally, maintenance of a supersaturated solid solution with C impurities by space charge control is described as a means of offset impurity effects.

Interpretation of plasma impurity deposition probes. Analytic approximation

NASA Astrophysics Data System (ADS)

Stangeby, P. C.

1987-10-01

Insertion of a probe into the plasma induces a high speed flow of the hydrogenic plasma to the probe which, by friction, accelerates the impurity ions to velocities approaching the hydrogenic ion acoustic speed, i.e., higher than the impurity ion thermal speed. A simple analytic theory based on this effect provides a relation between impurity fluxes to the probe Γimp and the undisturbed impurity ion density nimp, with the hydrogenic temperature and density as input parameters. Probe size also influences the collection process and large probes are found to attract a higher flux density than small probes in the same plasma. The quantity actually measured, cimp, the impurity atom surface density (m-2) net-deposited on the probe, is related to Γimp and thus to nimp by taking into account the partial removal of deposited material caused by sputtering and the redeposition process.

A LIBS method for simultaneous monitoring of the impurities and the hydrogenic composition present in the wall of the TJ-II stellarator

DOE Office of Scientific and Technical Information (OSTI.GOV)

López-Miranda, B., E-mail: belen.lopez@ciemat.es; Zurro, B.; Baciero, A.

The study of plasma-wall interactions and impurity transport in the plasma fusion devices is critical for the development of future fusion reactors. An experiment to perform laser induced breakdown spectroscopy, using minor modifications of our existing laser blow-off impurity injection system, has been set up thus making both experiments compatible. The radiation produced by the laser pulse focused at the TJ-II wall evaporates a surface layer of deposited impurities and the subsequent radiation produced by the laser-produced plasma is collected by two separate lens and fiber combinations into two spectrometers. The first spectrometer, with low spectral resolution, records a spectrummore » from 200 to 900 nm to give a survey of impurities present in the wall. The second one, with high resolution, is tuned to the wavelengths of the Hα and Dα lines in order to resolve them and quantify the hydrogen isotopic ratio present on the surface of the wall. The alignment, calibration, and spectral analysis method will be described in detail. First experimental results obtained with this setup will be shown and its relevance for the TJ-II experimental program discussed.« less

Comparative study on the copper activation and xanthate adsorption on sphalerite and marmatite surfaces

NASA Astrophysics Data System (ADS)

Liu, Jian; Wang, Yu; Luo, Deqiang; Chen, Luzheng; Deng, Jiushuai

2018-05-01

The copper activation and potassium butyl xanthate (PBX) adsorption on sphalerite and marmatite surfaces were comparatively investigated using in situ local electrochemical impedance spectroscopy (LEIS), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and surface adsorption tests. Comparing the LEIS and surface adsorption results, it was found that the activation time is a key factor influencing the copper activation and PBX adsorption on marmatite surface, but it has a negligible influence on sphalerite. For a short activation time within 10 min, the Fe impurity in marmatite shows an adverse influence on the speed of Cu adsorption and ion exchange as well as on the subsequent PBX adsorption. For a long activation time of 30 min, the LEIS, ToF-SIMS and surface adsorption results suggested that the Fe impurity in marmatite enhances the copper adsorption, whereas such enhanced copper adsorption of marmatite cannot result in corresponding enhancing of PBX adsorption. DFT result showed that the Fe impurity in marmatite has harmful influence on the PBX interaction with the Cu-activated surface by increasing the interaction energy. ToF-SIMS result further indicated that the Cu distribution in the outermost surface of marmatite is less than that of the sphalerite, which also results in the less PBX adsorption for the marmatite.

Effects of magnetic impurity scattering on superfluid 3He in aerogel

NASA Astrophysics Data System (ADS)

Aoyama, Kazushi; Ikeda, Ryusuke

2009-02-01

We investigate impurity effects on superfluid 3He in aerogel whose surface is not coated with 4He, different from most experimental situations. In systems with no 4He coating, spins of solid 3He absorbed on the aerogel surface are active and interact with spins of quasiparticles relevant to superfluidity and, for this reason, such an aerogel is treated as magnetic scatterers. It is found that, in the ABM pairing state affected by magnetic scatterings, not only the l-vector but also the d-vector has no long-ranged orientational order, and that the strong-coupling correction due to impurity scatterings is less suppressed than that in the nonmagnetic case, implying an expansion of the A-like phase region.

Material Surface Characteristics and Plasma Performance in the Lithium Tokamak Experiment

NASA Astrophysics Data System (ADS)

Lucia, Matthew James

The performance of a tokamak plasma and the characteristics of the surrounding plasma facing component (PFC) material surfaces strongly influence each other. Despite this relationship, tokamak plasma physics has historically been studied more thoroughly than PFC surface physics. The disparity is particularly evident in lithium PFC research: decades of experiments have examined the effect of lithium PFCs on plasma performance, but the understanding of the lithium surface itself is much less complete. This latter information is critical to identifying the mechanisms by which lithium PFCs affect plasma performance. This research focused on such plasma-surface interactions in the Lithium Tokamak Experiment (LTX), a spherical torus designed to accommodate solid or liquid lithium as the primary PFC. Surface analysis was accomplished via the novel Materials Analysis and Particle Probe (MAPP) diagnostic system. In a series of experiments on LTX, the MAPP x-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) capabilities were used for in vacuo interrogation of PFC samples. This represented the first application of XPS and TDS for in situ surface analysis of tokamak PFCs. Surface analysis indicated that the thin (dLi ˜ 100nm) evaporative lithium PFC coatings in LTX were converted to Li2O due to oxidizing agents in both the residual vacuum and the PFC substrate. Conversion was rapid and nearly independent of PFC temperature, forming a majority Li2O surface within minutes and an entirely Li2O surface within hours. However, Li2O PFCs were still capable of retaining hydrogen and sequestering impurities until the Li2 O was further oxidized to LiOH, a process that took weeks. For hydrogen retention, Li2O PFCs retained H+ from LTX plasma discharges, but no LiH formation was observed. Instead, results implied that H+ was only weakly-bound, such that it almost completely outgassed as H 2 within minutes. For impurity sequestration, LTX plasma performance---ascertained from plasma current and density measurements---progressively improved as plasma carbon and oxygen impurity levels fell. This was true for PFC conditioning by vacuum baking and argon glow discharge cleaning, as well as by lithium evaporation. Some evidence suggested that impurity sequestration was more important than hydrogen retention in enhancing LTX plasma performance. In contrast with expectations for lithium PFCs, heating the Li2 O PFCs in LTX caused increased plasma impurity levels that tended to reduce plasma performance.

Surface passivation process of compound semiconductor material using UV photosulfidation

DOEpatents

Ashby, Carol I. H.

1995-01-01

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator.

PubMed

Zhong, Min; Li, Shuai; Duan, Hou-Jian; Hu, Liang-Bin; Yang, Mou; Wang, Rui-Qiang

2017-06-21

We investigate the thermoelectric effect on a topological insulator surface with particular interest in impurity-induced resonant states. To clarify the role of the resonant states, we calculate the dc and ac conductivities and the thermoelectric coefficients along the longitudinal direction within the full Born approximation. It is found that at low temperatures, the impurity resonant state with strong energy de-pendence can lead to a zero-energy peak in the dc conductivity, whose height is sensitively dependent on the strength of scattering potential, and even can reverse the sign of the thermopower, implying the switching from n- to p-type carriers. Also, we exhibit the thermoelectric signatures for the filling process of a magnetic band gap by the resonant state. We further study the impurity effect on the dynamic optical conductivity, and find that the resonant state also generates an optical conductivity peak at the absorption edge for the interband transition. These results provide new perspectives for understanding the doping effect on topological insulator materials.

A multilayer physically based snowpack model simulating direct and indirect radiative impacts of light-absorbing impurities in snow

NASA Astrophysics Data System (ADS)

Tuzet, Francois; Dumont, Marie; Lafaysse, Matthieu; Picard, Ghislain; Arnaud, Laurent; Voisin, Didier; Lejeune, Yves; Charrois, Luc; Nabat, Pierre; Morin, Samuel

2017-11-01

Light-absorbing impurities (LAIs) decrease snow albedo, increasing the amount of solar energy absorbed by the snowpack. Its most intuitive and direct impact is to accelerate snowmelt. Enhanced energy absorption in snow also modifies snow metamorphism, which can indirectly drive further variations of snow albedo in the near-infrared part of the solar spectrum because of the evolution of the near-surface snow microstructure. New capabilities have been implemented in the detailed snowpack model SURFEX/ISBA-Crocus (referred to as Crocus) to account for impurities' deposition and evolution within the snowpack and their direct and indirect impacts. Once deposited, the model computes impurities' mass evolution until snow melts out, accounting for scavenging by meltwater. Taking advantage of the recent inclusion of the spectral radiative transfer model TARTES (Two-stream Analytical Radiative TransfEr in Snow model) in Crocus, the model explicitly represents the radiative impacts of light-absorbing impurities in snow. The model was evaluated at the Col de Porte experimental site (French Alps) during the 2013-2014 snow season against in situ standard snow measurements and spectral albedo measurements. In situ meteorological measurements were used to drive the snowpack model, except for aerosol deposition fluxes. Black carbon (BC) and dust deposition fluxes used to drive the model were extracted from simulations of the atmospheric model ALADIN-Climate. The model simulates snowpack evolution reasonably, providing similar performances to our reference Crocus version in terms of snow depth, snow water equivalent (SWE), near-surface specific surface area (SSA) and shortwave albedo. Since the reference empirical albedo scheme was calibrated at the Col de Porte, improvements were not expected to be significant in this study. We show that the deposition fluxes from the ALADIN-Climate model provide a reasonable estimate of the amount of light-absorbing impurities deposited on the snowpack except for extreme deposition events which are greatly underestimated. For this particular season, the simulated melt-out date advances by 6 to 9 days due to the presence of light-absorbing impurities. The model makes it possible to apportion the relative importance of direct and indirect impacts of light-absorbing impurities on energy absorption in snow. For the snow season considered, the direct impact in the visible part of the solar spectrum accounts for 85 % of the total impact, while the indirect impact related to accelerated snow metamorphism decreasing near-surface specific surface area and thus decreasing near-infrared albedo accounts for 15 % of the total impact. Our model results demonstrate that these relative proportions vary with time during the season, with potentially significant impacts for snowmelt and avalanche prediction.

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices.

PubMed

Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Rai, A; Reuter, D; Wieck, A D; Micolich, A P

2013-08-14

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 ×  is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

Volcanogenic Sulfur on Earth and Io: Composition and Spectroscopy

USGS Publications Warehouse

Kargel, J.S.; Delmelle, P.; Nash, D.B.

1999-01-01

The causes of Io's variegated surface, especially the roles of sulfur, and the geochemical history of sulfur compounds on Io are not well understood. Suspecting that minor impurities in sulfur might be important, we have investigated the major and trace element chemistry and spectroscopic reflectance of natural sulfur from a variety of terrestrial volcanic-hydrothermal environments. Evidence suggests that Io may be substantially coated with impure sulfur. On Earth, a few tenths of a percent to a few percent of chalcophile trace elements (e.g., As and Se) comonly occur in sulfur and appear to stabilize material of yellow, brown, orange, and red hues, which may persist even at low temperatures. Percentage levels of chalcophile impurities are reasonably expected to occur on Io in vapor sublimate deposits and flows derived from such deposits. Such impurities join a host of other mechanisms that might explain Io's reds and yellows. Two-tenths to two percent opaque crystalline impurities, particularly pyrite (FeS2), commonly produces green, gray, and black volcanic sulfur on Earth and might explain areas of Io having deposits of these colors. Pyrite produces a broad absorption near 1 ??m that gradually diminishes out to 1.6 ??m - similar but not identical to the spectrum of Io seen in Galileo NIMS data. Percentage amounts of carbonaceous impurities and tens of percent SiO2 (as silicates) also strongly affect the spectral properties of Earth's sulfur. Io's broad absorption between 0.52 and 0.64 ??m remains unexplained by these data but could be due to sodium sulfides, as suggested previously by others, or to As, Se, or other impurities. These impurities and others, such as P and Cl (which could exist on Io's surface in amounts over 1% that of sulfur), greatly alter the molecular structure of molten and solid sulfur. Minor impurities could impact Io's geology, such as the morphology of sulfur lava flows and the ability of sulfur to sustain high relief. We have not found any natural sulfur containing significant Na beyond that attributable to silicate inclusions. In sum, the unique physical-chemical properties of S-rich systems and the strong affinity of certain elements for S may have broad implications for the appearance, spectroscopic interpretation, and geologic processes of Io. Identification of impurities in sulfur may be helpful in tracing the geochemical evolution of surface deposits on Io. Perhaps foretelling of new areas of investigation, Cl has recently been reported in the Io torus (M. Kueppers and N. M. Schneider 1999, Eos Trans.80, 5207), suggesting the presence on Io of either salts, such as halite, or sulfur chlorides. Further evidence of minor iogenic impurities should be sought in Io's neutral cloud and plasma torus as well as in further scrutiny of Io's reflectance spectra. ?? 1999 Academic Press.

Cryogenic pellet production developments for long-pulse plasma operation

NASA Astrophysics Data System (ADS)

Meitner, S. J.; Baylor, L. R.; Combs, S. K.; Fehling, D. T.; McGill, J. M.; Duckworth, R. C.; McGinnis, W. D.; Rasmussen, D. A.

2014-01-01

Long pulse plasma operation on large magnetic fusion devices require multiple forms of cryogenically formed pellets for plasma fueling, on-demand edge localized mode (ELM) triggering, radiative cooling of the divertor, and impurity transport studies. The solid deuterium fueling and ELM triggering pellets can be formed by extrusions created by helium cooled, twin-screw extruder based injection system that freezes deuterium in the screw section. A solenoid actuated cutter mechanism is activated to cut the pellets from the extrusion, inserting them into the barrel, and then fired by the pneumatic valve pulse of high pressure gas. Fuel pellets are injected at a rate up to 10 Hz, and ELM triggering pellets are injected at rates up to 20 Hz. The radiative cooling and impurity transport study pellets are produced by introducing impurity gas into a helium cooled section of a pipe gun where it deposits in-situ. A pneumatic valve is opened and propellant gas is released downstream where it encounters a passive punch which initially accelerates the pellet before the gas flow around the finishes the pellet acceleration. This paper discusses the various cryogenic pellet production techniques based on the twin-screw extruder, pipe gun, and pellet punch designs.

Cryogenic pellet production developments for long-pulse plasma operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meitner, S. J.; Baylor, L. R.; Combs, S. K.

Long pulse plasma operation on large magnetic fusion devices require multiple forms of cryogenically formed pellets for plasma fueling, on-demand edge localized mode (ELM) triggering, radiative cooling of the divertor, and impurity transport studies. The solid deuterium fueling and ELM triggering pellets can be formed by extrusions created by helium cooled, twin-screw extruder based injection system that freezes deuterium in the screw section. A solenoid actuated cutter mechanism is activated to cut the pellets from the extrusion, inserting them into the barrel, and then fired by the pneumatic valve pulse of high pressure gas. Fuel pellets are injected at amore » rate up to 10 Hz, and ELM triggering pellets are injected at rates up to 20 Hz. The radiative cooling and impurity transport study pellets are produced by introducing impurity gas into a helium cooled section of a pipe gun where it deposits in-situ. A pneumatic valve is opened and propellant gas is released downstream where it encounters a passive punch which initially accelerates the pellet before the gas flow around the finishes the pellet acceleration. This paper discusses the various cryogenic pellet production techniques based on the twin-screw extruder, pipe gun, and pellet punch designs.« less

Evaluating and modeling the effects of surface sampling factors on the recovery of organic chemical attribution signatures using the accelerated diffusion sampler and solvent extraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mo, Kai-For; Heredia-Langner, Alejandro; Fraga, Carlos G.

In this study, an experimental design matrix was created and executed in order to test the effects of various real-world factors on the ability of the (1) accelerated diffusion sampler with solid phase micro-extraction (ADS-SPME) and (2) solvent extraction to capture organic chemical attribution signatures (CAS) from dimethyl methylphosphonate (DMMP) spiked onto painted wall board (PWB) surfaces. The DMMP CAS organic impurities sampled by ADS-SPME and solvent extraction were analyzed by gas chromatography/mass spectrometry (GC/MS). The number of detected DMMP CAS impurities and their respective GC/MS peak areas were determined as a function of DMMP stock, DMMP spiked volume, exposuremore » time, SPME sampling time, and ADS headspace pressure. Based on the statistical analysis of experimental results, several general conclusions are made: (1) ADS-SPME with vacuum (i.e., reduced pressure) increased the amount of detected CAS impurity, as measured by GC/MS peak area, by a factor of 1.7 to 1.9 for PWB under certain experimental conditions, (2) the amount of detected CAS impurity was most influenced by spiked volume, stock, and ADS headspace pressure, (3) the ADS had no measurable effect on the number of detected DMMP impurities, that is, the ADS (with and without reduced pressure) had no practical effect on the DMMP impurity profile collected from spiked PWB, and (4) solvent extraction out performed ADS-SPME in terms of consistently capturing all or most of the targeted DMMP impurities from spiked PWB.« less

Evaluating and modeling the effects of surface sampling factors on the recovery of organic chemical attribution signatures using the accelerated diffusion sampler and solvent extraction.

PubMed

Mo, Kai-For; Heredia-Langner, Alejandro; Fraga, Carlos G

2017-03-01

In this study, an experimental design matrix was created and executed to test the effects of various real-world factors on the ability of (1) the accelerated diffusion sampler with solid phase micro-extraction (ADS-SPME) and (2) solvent extraction to capture organic chemical attribution signatures (CAS) from dimethyl methylphosphonate (DMMP) spiked onto painted wall board (PWB) surfaces. The DMMP CAS organic impurities sampled by ADS-SPME and solvent extraction were analyzed by gas chromatography/mass spectrometry (GC/MS). The number of detected DMMP CAS impurities and their respective GC/MS peak areas were determined as a function of DMMP stock, DMMP spiked volume, exposure time, SPME sampling time, and ADS headspace pressure. Based on the statistical analysis of experimental results, several general conclusions are made: (1) the amount of CAS impurity detected using ADS-SPME and GC/MS was most influenced by spiked volume, stock, and ADS headspace pressure, (2) reduced ADS headspace pressure increased the amount of detected CAS impurity, as measured by GC/MS peak area, by up to a factor of 1.7-1.9 compared to ADS at ambient headspace pressure, (3) the ADS had no measurable effect on the number of detected DMMP impurities, that is, ADS (with and without reduced pressure) had no practical effect on the DMMP impurity profile collected from spiked PWB, and (4) solvent extraction out performed ADS-SPME in terms of consistently capturing all or most of the targeted DMMP impurities from spiked PWB. Copyright © 2016 Elsevier B.V. All rights reserved.

Feedback system for divertor impurity seeding based on real-time measurements of surface heat flux in the Alcator C-Mod tokamak

NASA Astrophysics Data System (ADS)

Brunner, D.; Burke, W.; Kuang, A. Q.; LaBombard, B.; Lipschultz, B.; Wolfe, S.

2016-02-01

Mitigation of the intense heat flux to the divertor is one of the outstanding problems in fusion energy. One technique that has shown promise is impurity seeding, i.e., the injection of low-Z gaseous impurities (typically N2 or Ne) to radiate and dissipate the power before it arrives to the divertor target plate. To this end, the Alcator C-Mod team has created a first-of-its-kind feedback system to control the injection of seed gas based on real-time surface heat flux measurements. Surface thermocouples provide real-time measurements of the surface temperature response to the plasma heat flux. The surface temperature measurements are inputted into an analog computer that "solves" the 1-D heat transport equation to deliver accurate, real-time signals of the surface heat flux. The surface heat flux signals are sent to the C-Mod digital plasma control system, which uses a proportional-integral-derivative (PID) algorithm to control the duty cycle demand to a pulse width modulated piezo valve, which in turn controls the injection of gas into the private flux region of the C-Mod divertor. This paper presents the design and implementation of this new feedback system as well as initial results using it to control divertor heat flux.

Feedback system for divertor impurity seeding based on real-time measurements of surface heat flux in the Alcator C-Mod tokamak.

PubMed

Brunner, D; Burke, W; Kuang, A Q; LaBombard, B; Lipschultz, B; Wolfe, S

2016-02-01

Mitigation of the intense heat flux to the divertor is one of the outstanding problems in fusion energy. One technique that has shown promise is impurity seeding, i.e., the injection of low-Z gaseous impurities (typically N2 or Ne) to radiate and dissipate the power before it arrives to the divertor target plate. To this end, the Alcator C-Mod team has created a first-of-its-kind feedback system to control the injection of seed gas based on real-time surface heat flux measurements. Surface thermocouples provide real-time measurements of the surface temperature response to the plasma heat flux. The surface temperature measurements are inputted into an analog computer that "solves" the 1-D heat transport equation to deliver accurate, real-time signals of the surface heat flux. The surface heat flux signals are sent to the C-Mod digital plasma control system, which uses a proportional-integral-derivative (PID) algorithm to control the duty cycle demand to a pulse width modulated piezo valve, which in turn controls the injection of gas into the private flux region of the C-Mod divertor. This paper presents the design and implementation of this new feedback system as well as initial results using it to control divertor heat flux.

Habit modification of potassium acid phthalate (KAP) single crystals by impurities

NASA Astrophysics Data System (ADS)

Murugakoothan, P.; Mohan Kumar, R.; Ushasree, P. M.; Jayavel, R.; Dhanasekaran, R.; Ramasamy, P.

1999-12-01

Nonlinear optical materials potassium dihydrogen phosphate (KDP), urea and L-arginine phosphate (LAP)-doped KAP crystals were grown by the slow cooling method. The LAP-doped crystals show pronounced habit modification compared to KDP and urea doping. The effect of these impurities on growth kinetics, surface morphology, habit modification, structure, optical and mechanical properties have been studied. Among the three impurities, urea doping yields high mechanical stability and optical transmission and for KDP and LAP doping there is a decrease in optical transmission.

Impurity effects on ionic-liquid-based supercapacitors

NASA Astrophysics Data System (ADS)

Liu, Kun; Lian, Cheng; Henderson, Douglas; Wu, Jianzhong

2017-02-01

Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface of a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. By comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

PubMed Central

Jung, Han Sae; Tsai, Hsin-Zon; Wong, Dillon; Germany, Chad; Kahn, Salman; Kim, Youngkyou; Aikawa, Andrew S.; Desai, Dhruv K.; Rodgers, Griffin F.; Bradley, Aaron J.; Velasco, Jairo; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Zettl, Alex; Crommie, Michael F.

2015-01-01

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene’s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices. PMID:26273961

Purifying Aluminum by Vacuum Distillation

NASA Technical Reports Server (NTRS)

Du Fresne, E. R.

1985-01-01

Proposed method for purifying aluminum employs one-step vacuum distillation. Raw material for process impure aluminum produced in electrolysis of aluminum ore. Impure metal melted in vacuum. Since aluminum has much higher vapor pressure than other constituents, boils off and condenses on nearby cold surfaces in proportions much greater than those of other constituents.

Purification of Hydrogen

DOEpatents

Newton, A S

1950-12-05

Disclosed is a process for purifying hydrogen containing various gaseous impurities by passing the hydrogen over a large surface of uranium metal at a temperature above the decomposition temperature of uranium hydride, and below the decomposition temperature of the compounds formed by the combination of the uranium with the impurities in the hydrogen.

Method for producing highly reflective metal surfaces

DOEpatents

Arnold, Jones B.; Steger, Philip J.; Wright, Ralph R.

1983-01-01

The invention is a novel method for producing mirror surfaces which are extremely smooth and which have high optical reflectivity. The method includes electrolessly depositing an amorphous layer of nickel on an article and then diamond-machining the resulting nickel surface to increase its smoothness and reflectivity. The machined nickel surface then is passivated with respect to the formation of bonds with electrodeposited nickel. Nickel then is electrodeposited on the passivated surface to form a layer of electroplated nickel whose inside surface is a replica of the passivated surface. The electroplated nickel layer then is separated from the passivated surface. The mandrel then may be re-passivated and provided with a layer of electrodeposited nickel, which is then recovered from the mandrel providing a second replica. The mandrel can be so re-used to provide many such replicas. As compared with producing each mirror-finished article by plating and diamond-machining, the new method is faster and less expensive.

Colour centres and nanostructures on the surface of laser crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulagin, N A

2012-11-30

This paper presents a study of structural and radiationinduced colour centres in the bulk and ordered nanostructures on the surface of doped laser crystals: sapphire, yttrium aluminium garnet and strontium titanate. The influence of thermal annealing, ionising radiation and plasma exposure on the spectroscopic properties of high-purity materials and crystals containing Ti, V and Cr impurities is examined. Colour centres resulting from changes in the electronic state of impurities and plasma-induced surface modification of the crystals are studied by optical, EPR and X-ray spectroscopies, scanning electron microscopy and atomic force microscopy. X-ray line valence shift measurements are used to assessmore » changes in the electronic state of some impurity and host ions in the bulk and on the surface of oxide crystals. Conditions are examined for the formation of one- and two-level arrays of ordered crystallites 10{sup -10} to 10{sup -7} m in size on the surface of crystals doped with irongroup and lanthanoid ions. The spectroscopic properties of the crystals are analysed using ab initio self-consistent field calculations for Me{sup n+} : [O{sup 2-}]{sub k} clusters. (interaction of laser radiation with matter. laser plasma)« less

Mesoscale Elucidation of Surface Passivation in the Li-Sulfur Battery Cathode.

PubMed

Liu, Zhixiao; Mukherjee, Partha P

2017-02-15

The cathode surface passivation caused by Li 2 S precipitation adversely affects the performance of lithium-sulfur (Li-S) batteries. Li 2 S precipitation is a complicated mesoscale process involving adsorption, desorption and diffusion kinetics, which are affected profoundly by the reactant concentration and operating temperature. In this work, a mesoscale interfacial model is presented to study the growth of Li 2 S film on carbon cathode surface. Li 2 S film growth experiences nucleation, isolated Li 2 S island growth and island coalescence. The slow adsorption rate at small S 2- concentration inhibits the formation of nucleation seeds and the lateral growth of Li 2 S islands, which deters surface passivation. An appropriate operating temperature, especially in the medium-to-high temperature range, can also defer surface passivation. Fewer Li 2 S nucleation seeds form in such an operating temperature range, thereby facilitating heterogeneous growth and potentially inhibiting the lateral growth of the Li 2 S film, which may ultimately result in reduced surface passivation. The high specific surface area of the cathode microstructure is expected to mitigate the surface passivation.

Nitride surface passivation of GaAs nanowires: impact on surface state density.

PubMed

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Quantum Impurity Models as Reference Systems for Strongly Correlated Materials: The Road from the Kondo Impurity Model to First Principles Electronic Structure Calculations with Dynamical Mean-Field Theory

NASA Astrophysics Data System (ADS)

Kotliar, Gabriel

2005-01-01

Dynamical mean field theory (DMFT) relates extended systems (bulk solids, surfaces and interfaces) to quantum impurity models (QIM) satisfying a self-consistency condition. This mapping provides an economic description of correlated electron materials. It is currently used in practical computations of physical properties of real materials. It has also great conceptual value, providing a simple picture of correlated electron phenomena on the lattice, using concepts derived from quantum impurity models such as the Kondo effect. DMFT can also be formulated as a first principles electronic structure method and is applicable to correlated materials.

Study of the Effects of Impurities on the Properties of Silicon Materials and Performance of Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Sah, C. T.

1979-01-01

Numerical solutions were obtained from the exact one dimensional transmission line circuit model to study the following effects on the terrestrial performance of silicon solar cells: interband Auger recombination; surface recombination at the contact interfaces; enhanced metallic impurity solubility; diffusion profiles; and defect-impurity recombination centers. Thermal recombination parameters of titanium impurity in silicon were estimated from recent experimental data. Based on those parameters, computer model calculations showed that titanium concentration must be kept below 6x10 to the 12th power Ti/cu cm in order to achieve 16% AM1 efficiency in a silicon solar cell of 250 micrometers thick and 1.5 ohm-cm resistivity.

Major fraction of black carbon is flushed from the melting New Hampshire snowpack nearly as quickly as soluble impurities

NASA Astrophysics Data System (ADS)

Lazarcik, James; Dibb, Jack E.; Adolph, Alden C.; Amante, Jacqueline M.; Wake, Cameron P.; Scheuer, Eric; Mineau, Madeleine M.; Albert, Mary R.

2017-01-01

Seasonal snowpacks accumulate impurities derived from atmospheric aerosols and trace gases throughout the winter and release them during snowmelt. Previous field and laboratory studies have shown that a snowpack can lose up to 80% of the soluble ion burden in the first 20% of the melt, an event commonly known as an ionic pulse. Other studies have concluded that particulate impurities (e.g., black carbon (BC)) concentrate in surface layers during melt which can have important implications for snowpack albedo. However, model and field studies have indicated that meltwater scavenging efficiency of BC in melting snowpacks is still an area of uncertainty. To quantify BC melt dynamics and the release of soluble impurities, we collected and analyzed near-daily chemical profiles in the snowpack at three sites during two winters in New Hampshire, United States of America. We observe an ionic pulse and a pulse of BC from the snowpack at the onset of melt; up to 62% of BC leaves within the first 24% of the melt. Surface concentrations of BC are higher than seasonal medians at the end of the winter season, but surface enhancements do not appear to be closely linked to decreases in snow-water equivalence caused by melting.

Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

NASA Astrophysics Data System (ADS)

Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

2014-12-01

Thin layers of Al2O3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p+ emitters, due to a high density of fixed negative charges. Recent results indicate that Al2O3 can also provide a good passivation of certain phosphorus-diffused n+ c-Si surfaces. In this work, we studied the recombination at Al2O3 passivated n+ surfaces theoretically with device simulations and experimentally for Al2O3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al2O3 interface. This pronounced maximum was also observed experimentally for n+ surfaces passivated either with Al2O3 single layers or stacks of Al2O3 capped by SiNx, when activated with a low temperature anneal (425 °C). In contrast, for Al2O3/SiNx stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n+ diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al2O3/SiNx stacks can provide not only excellent passivation on p+ surfaces but also on n+ surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments.

Tunable reactivity of supported single metal atoms by impurity engineering of the MgO(001) support.

PubMed

Pašti, Igor A; Johansson, Börje; Skorodumova, Natalia V

2018-02-28

Development of novel materials may often require a rational use of high price components, like noble metals, in combination with the possibility to tune their properties in a desirable way. Here we present a theoretical DFT study of Au and Pd single atoms supported by doped MgO(001). By introducing B, C and N impurities into the MgO(001) surface, the interaction between the surface and the supported metal adatoms can be adjusted. Impurity atoms act as strong binding sites for Au and Pd adatoms and can help to produce highly dispersed metal particles. The reactivity of metal atoms supported by doped MgO(001), as probed by CO, is altered compared to their counterparts on pristine MgO(001). We find that Pd atoms on doped MgO(001) are less reactive than on perfect MgO(001). In contrast, Au adatoms bind CO much more strongly when placed on doped MgO(001). In the case of Au on N-doped MgO(001) we find that charge redistribution between the metal atom and impurity takes place even when not in direct contact, which enhances the interaction of Au with CO. The presented results suggest possible ways for optimizing the reactivity of oxide supported metal catalysts through impurity engineering.

Role of codeposited impurities during growth. II. Dependence of morphology on binding and barrier energies

NASA Astrophysics Data System (ADS)

Sathiyanarayanan, Rajesh; Hamouda, Ajmi Bh.; Pimpinelli, A.; Einstein, T. L.

2011-01-01

In an accompanying article we showed that surface morphologies obtained through codeposition of a small quantity (2%) of impurities with Cu during growth (step-flow mode, θ = 40 ML) significantly depends on the lateral nearest-neighbor binding energy (ENN) to Cu adatom and the diffusion barrier (Ed) of the impurity atom on Cu(0 0 1). Based on these two energy parameters, ENN and Ed, we classify impurity atoms into four sets. We study island nucleation and growth in the presence of codeposited impurities from different sets in the submonolayer (θ⩽ 0.7 ML) regime. Similar to growth in the step-flow mode, we find different nucleation and growth behavior for impurities from different sets. We characterize these differences through variations of the number of islands (Ni) and the average island size with coverage (θ). Further, we compute the critical nucleus size (i) for all of these cases from the distribution of capture-zone areas using the generalized Wigner distribution.

Enhancement of biocompatibility of 316LVM stainless steel by cyclic potentiodynamic passivation.

PubMed

Shahryari, Arash; Omanovic, Sasha; Szpunar, Jerzy A

2009-06-15

Passivation of stainless steel implants is a common procedure used to increase their biocompatibility. The results presented in this work demonstrate that the electrochemical cyclic potentiodynamic polarization (CPP) of a biomedical grade 316LVM stainless steel surface is a very efficient passivation method that can be used to significantly improve the material's general corrosion resistance and thus its biocompatibility. The influence of a range of experimental parameters on the passivation/corrosion protection efficiency is discussed. The passive film formed on a 316LVM surface by using the CPP method offers a significantly higher general corrosion resistance than the naturally grown passive film. The corresponding relative corrosion protection efficiency measured in saline during a 2-month period was 97% +/- 1%, which demonstrates a very high stability of the CPP-formed passive film. Its high corrosion protection efficiency was confirmed also at temperatures and chloride concentrations well above normal physiological levels. It was also shown that the CPP is a significantly more effective passivation method than some other surface-treatment methods commonly used to passivate biomedical grade stainless steels. In addition, the CPP-passivated 316LVM surface showed an enhanced biocompatibility in terms of preosteoblast (MC3T3) cells attachment. An increased thickness of the CPP-formed passive film and its enrichment with Cr(VI) and oxygen was determined to be the origin of the material's increased general corrosion resistance, whereas the increased surface roughness and surface (Volta) potential were suggested to be the origin of the enhanced preosteoblast cells attachment. Copyright 2008 Wiley Periodicals, Inc.

The effect of impurities and incident angle on the secondary electron emission of Ni(110)

NASA Astrophysics Data System (ADS)

Lazar, Hadar; Patino, Marlene; Raitses, Yevgeny; Koel, Bruce E.; Gentile, Charles; Feibush, Eliot

2015-11-01

The investigation of secondary electron emission (SEE) of conducting materials used for magnetic fusion devices and plasma thrusters is important for determining device lifetime and performance. Methods to quantify the secondary electron emission from conducting materials and to characterize the effects that impurities and incident angles have on secondary electron emission were developed using 4-grid low energy electron diffraction (LEED) optics. The total secondary electron yield from a Ni(110) surface was continuously measured from the sample current as surface contamination increased from reactions with background gases in the ultrahigh vacuum chamber. Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) were used to examine the composition and impurity levels on the Ni(110) surface. The total secondary electron yield was also measured at different incident angles. Thank you to the Princeton Plasma Physics Laboratory and the Department of Energy for the opportunity to work on this project through the Science Undergraduate Laboratory Internships.

The effects of impurities and incidence angle on the secondary electron emission of Ni(110)

NASA Astrophysics Data System (ADS)

Lazar, Hadar; Patino, Marlene; Raitses, Yevgeny; Koel, Bruce; Gentile, Charles; Feibush, Eliot

The investigation of secondary electron emission (SEE) of conducting materials used for magnetic fusion devices and plasma thrusters is important for determining device lifetime and performance. Methods to quantify the secondary electron emission from conducting materials and to characterize the effects that impurities and incidence angles have on secondary electron emission were developed using 4-grid low energy electron diffraction (LEED) optics. The total secondary electron yield from a Ni(110) surface was continuously measured from the sample current as surface contamination increased from reactions with background gases in the ultrahigh vacuum chamber. Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) were used to examine the composition and impurity levels on the Ni(110) surface. The total secondary electron yield was also measured at different incidence angles. Thank you to the Princeton Plasma Physics Laboratory (PPPL) and the Department of Energy (DOE) for the opportunity to work on this project through the Science Undergraduate Laboratory Internships (SULI).

The Low-Recycling Lithium Boundary and Implications for Plasma Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granstedt, Erik Michael

Pumping of incident hydrogen and impurity ions by lithium enables control of the particle inventory and fueling profile in magnetic-confined plasmas, and may raise the plasma temperature near the wall. As a result, the density gradient is expected to contribute substantially to the free-energy, affecting particle and thermal transport from micro-turbulence which is typically the dominant transport mechanism in high-temperature fusion experiments. Transport in gyrokinetic simulations of density-gradient-dominated profiles is characterized by a small linear critical gradient, large particle flux, and preferential diffusion of cold particles. As a result, the heat flux is below 5/2 or even 3/2 times themore » particle flux, usually assumed to be the minimum for convection. While surprising, this result is consistent with increasing entropy. Coupled TEM-ITG (ion-temperature- gradient) simulations using ηe = ηi find η = ∇T /∇n∼0.8 maximizes the linear critical pressure gradient, which suggests that experiments operating near marginal ITG stability with larger η would increase the linear critical pressure gradient by transferring free-energy from the temperature gradient to the density gradient. Simulations were performed with profiles predicted for the Lithium Tokamak Experiment (LTX) if ion thermal transport was neoclassical, while electron thermal transport and particle transport were a fixed ratio above the neoclassical level. A robust TEM instability was found for the outer half radius, while the ITG was found to be driven unstable as well during gas puff fueling. This suggests that TEM transport will be an important transport mechanism in high-temperature low-recycling fusion experiments, and in the absence of stabilizing mechanisms, may dominate over neoclassical transport. A diagnostic suite has been developed to measure hydrogen and impurity emission in LTX in order to determine the lower bound on recycling that can be achieved in a small tokamak using solid lithium coatings, assess its dependence on the operating condition of the lithium surface, and evaluate its impact on the discharge. Coatings on the close-fitting stainless-steel substrate produce a significant reduction in recyling, so that the effective particle confinement times are as low as 1 ms. Measurements of particle inventory in the plasma and hydrogen Lyman-α emission indicate that hydrogen recycling at the surface increases as subsequent discharges are performed; nevertheless, strong pumping of hydrogen is observed even after almost double the cumulative fueling is applied that should saturate the lithium coating to the penetration depth of hydrogen ions. Probe measurements show that when external fueling is terminated, the scrape-off-layer of discharges with fresh coatings decays to lower density and rises to higher electron temperature than for discharges with a partially-passivated surface, consistent with reduced edge cooling from recycled particles. Near the end of the discharge, higher plasma current correlates with reduced τp* and hydrogen emission, suggesting that discharges with fresh coatings achieve higher electron temperature in the core. A novel approach using neutral modeling was developed for the inverse problem of determining the distribution of recycled particle flux from PFC surfaces given a large number of emission measurements, revealing that extremely low levels of recycling (Rcore∼0.6 and Rplate∼0.8) have been achieved with solid lithium coatings. Together with impurity emission measurements, modeling suggests that during periods of particularly low electron density, influx of impurities from the walls contributes substantially to the global particle balance.« less

Large tangential electric fields in plasmas close to temperature screening

NASA Astrophysics Data System (ADS)

Velasco, J. L.; Calvo, I.; García-Regaña, J. M.; Parra, F. I.; Satake, S.; Alonso, J. A.; the LHD team

2018-07-01

Low collisionality stellarator plasmas usually display a large negative radial electric field that has been expected to cause accumulation of impurities due to their high charge number. In this paper, two combined effects that can potentially modify this scenario are discussed. First, it is shown that, in low collisionality plasmas, the kinetic contribution of the electrons to the radial electric field can make it negative but small, bringing the plasma close to impurity temperature screening (i.e., to a situation in which the ion temperature gradient is the main drive of impurity transport and causes outward flux); in plasmas of very low collisionality, such as those of the large helical device displaying impurity hole (Ida et al (The LHD Experimental Group) 2009 Phys. Plasmas 16 056111; Yoshinuma et al (The LHD Experimental Group) 2009 Nucl. Fusion 49 062002), screening may actually occur. Second, the component of the electric field that is tangent to the flux surface (in other words, the variation of the electrostatic potential on the flux surface), although smaller than the radial component, has recently been suggested to be an additional relevant drive for radial impurity transport. Here, it is explained that, especially when the radial electric field is small, the tangential magnetic drift has to be kept in order to correctly compute the tangential electric field, that can be larger than previously expected. This can have a strong impact on impurity transport, as we illustrate by means of simulations using the newly developed code kinetic orbit-averaging-solver for stellarators, although it is not enough to explain by itself the behavior of the fluxes in situations like the impurity hole.

Passivating Window/First Layer AR Coating for Space Solar Cells

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Bailey, S. G.; Flood, D. J.; Brinker, D. J.; Alterovitz, S. A.; Wheeler, D. R.; Matesscu, G.; Goradia, C.; Goradia, M.

2004-01-01

Chemically grown oxides, if well designed, offer excellent surface passivation of the emitter surface of space solar cells and can be used as effective passivating window/first layer AR coating. In this paper, we demonstrate the effectiveness of using a simple room temperature wet chemical technique to grow cost effective passivating layers on solar cell front surfaces after the front grid metallization step. These passivating layers can be grown both on planar and porous surfaces. Our results show that these oxide layers: (i) can effectively passivate the from the surface, (ii) can serve as an effective optical window/first layer AR coating, (iii) are chemically, thermally and UV stable, and (iv) have the potential of improving the BOL and especially the EOL efficiency of space solar cells. The potential of using this concept to simplify the III-V based space cell heterostructures while increasing their BOL and EOL efficiency is also discussed.

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

NASA Astrophysics Data System (ADS)

Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

2009-08-01

Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

Remobilizing the Interface of Thermocapillary Driven Bubbles Retarded By the Adsorption of a Surfactant Impurity on the Bubble Surface

NASA Technical Reports Server (NTRS)

Palaparthi, Ravi; Maldarelli, Charles; Papageorgiou, Dimitri; Singh, Bhim (Technical Monitor)

2001-01-01

Thermocapillary migration is a method for moving bubbles in space in the absence of buoyancy. A temperature gradient is the continuous phase in which a bubble is situated, and the applied gradient impressed on the bubble surface causes one pole of the drop to be cooler than the opposite pole. As the surface tension is a decreasing function of temperature, the cooler pole pulls at the warmer pole, creating a flow that propels the bubble in the direction of the warmer fluid. A major impediment to the practical use of thermocapillary to direct the movement of bubbles in space is the fact that surfactant impurities, which are unavoidably present in the continuous phase, can significantly reduce the migration velocity. A surfactant impurity adsorbed onto the bubble interface is swept to the trailing end of the bubble. When bulk concentrations are low (which is the case with an impurity), diffusion of surfactant to the front end is slow relative to convection, and surfactant collects at the back end of the bubble. Collection at the back lowers the surface tension relative to the front end setting up a reverse tension gradient. (This can also be the case if kinetic desorption of surfactant at the back end of the bubble is much slower than convection.) For buoyancy driven bubble motions in the absence of a thermocapillarity, the tension gradient opposes the surface flow, and reduces the surface and terminal velocities (the interface becomes more solid-like and bubbles translate as solid particles). When thermocapillary forces are present, the reverse tension gradient set up by the surfactant accumulation reduces the temperature-induced tension gradient, and can decrease to near zero the bubble's thermocapillary velocity. The objective of our research is to develop a method for enhancing the thermocapillary migration of bubbles which have be retarded by the adsorption onto the bubble surface of a surfactant impurity. Our remobilization theory proposes to use surfactant molecules which kinetically rapidly exchange between the bulk and the surface and are at high bulk concentrations. Because the remobilizing surfactant is present at much higher concentrations than the impurity, it adsorbs to the bubble surface much faster than the impurity when the bubble is formed, and thereby prevents the impurity from adsorbing onto the surface. In addition, the rapid kinetic exchange and high bulk concentration maintain a saturated surface with uniform surface concentrations. This prevents retarding surface tension gradients and keeps the thermocapillary velocity high. In our reports over the first 2 years, we presented numerical simulations of the bubble motion and surfactant transport which verified theoretically the concept of remobilization, and the development of an apparatus to track and measure the velocity of rising bubbles in a glycerol/water surfactant solution. This year, we detail experimental observations of remobilization. Two polyethylene oxide surfactants were studied, C12E6 (CH3(CH2)11(OCH2)6OH) and C10E8 (CH3(CH2)4(OCH2CH2)8OH). Measurements of the kinetic exchange for these surfactants show that the one with the longer hydrophobe chain C12E6 has a lower rate of kinetic exchange. In addition, this surfactant is much less soluble in the glycerol/water mixture because of the shorter ethoxylate chain. As a result, we found that C12E6 had only a very limited ability to remobilize rising bubbles because of the limited kinetic exchange and reduced solubility. However, C10E8, with its higher solubility and more rapid exchange was found to dramatically remobilize rising bubbles. We also compared our theoretical calculations to the experimental measurements of velocity for both the non-remobilizing and remobilizing surfactants and found excellent agreement. We further observed that for C10E8 at high concentrations, which exceeded the critical micelle concentrations, additional remobilization was measured. In this case the rapid exchange of monomer between micelle and surfactant provides an additional mechanism for maintaining a uniform surface concentrations.

Remobilizing the Interfaces of Thermocapillary Driven Bubbles Retarded by the Adsorption of a Surfactant Impurity on the Bubble Surface

NASA Technical Reports Server (NTRS)

Palaparthi, Ravi; Maldarelli, Charles; Papageorgiou, Dimitri; Singh, Bhim S. (Technical Monitor)

2000-01-01

Thermocapillary migration is a method for moving bubbles in space in the absence of buoyancy. A temperature gradient is applied to the continuous phase in which a bubble is situated, and the applied gradient impressed on the bubble surface causes one pole of the drop to be cooler than the opposite pole. As the surface tension is a decreasing function of temperature, the cooler pole pulls at the warmer pole, creating a flow which propels the bubble in the direction of the warmer fluid. A major impediment to the practical use of thermocapillarity to direct the movement of bubbles in space is the fact that surfactant impurities which are unavoidably present in the continuous phase can significantly reduce the migration velocity. A surfactant impurity adsorbed onto the bubble interface is swept to the trailing end of the bubble. When bulk concentrations are low (which is the case with an impurity), diffusion of surfactant to the front end is slow relative to convection, and surfactant collects at the back end of the bubble. Collection at the back lowers the surface tension relative to the front end setting up a reverse tension gradient. For buoyancy driven bubble motions in the absence of a thermocapillarity, the tension gradient opposes the surface flow, and reduces the surface and terminal velocities (the interface becomes more solid-like). When thermocapillary forces are present, the reverse tension gradient set up by the surfactant accumulation reduces the temperature tension gradient, and decreases to near zero the thermocapillary velocity. The objective of our research is to develop a method for enhancing the thermocapillary migration of bubbles which have been retarded by the adsorption onto the bubble surface of a surfactant impurity, Our remobilization theory proposes to use surfactant molecules which kinetically rapidly exchange between the bulk and the surface and are at high bulk concentrations. Because the remobilizing surfactant is present at much higher concentrations than the impurity, it adsorbs to the bubble much faster than the impurity when the bubble is formed, and thereby prevents the impurity from adsorbing onto the surface. In addition the rapid kinetic exchange and high bulk concentration maintain a saturated surface with a uniform surface concentrations. This prevents retarding surface tension gradients and keeps the velocity high. In our first report last year, we detailed experimental results which verified the theory of remobilization in ground based experiments in which the steady velocity of rising bubbles was measured in a continuous phase consisting of a glycerol/water mixture containing a polyethylene glycol surfactant C12E6 (CH3(CH2)11(OCH2CH2)6OH). In our report this year, we detail our efforts to describe theoretically the remobilization observed. We construct a model in which a bubble rises steadily by buoyancy in a continuous (Newtonian) viscous fluid containing surfactant with a uniform far field bulk concentration. We account for the effects of inertia as well as viscosity in the flow in the continuous phase caused by the bubble motion (order one Reynolds number), and we assume that the bubble shape remains spherical (viscous and inertial forces are smaller than capillary forces, i e. small Weber and capillary numbers). The surfactant distribution is calculated by solving the mass transfer equations including convection and diffusion in the bulk, and finite kinetic exchange the bulk and the surface. Convective effects dominate diffusive mass transfer in the bulk of the liquid (high Peclet numbers) except in a thin boundary layer near the surface. A finite volume method is used to numerically solve the hydrodynamic and mass transfer equations on a staggered grid which accounts specifically for the thin boundary layer. We present the results of the nondimensional drag as a function of the bulk concentration of surfactant for different rates of kinetic exchange, from which we develop criteria for the concentration necessary to develop a prescribed degree of remobilization. The criteria compare favorably with the experimental results.

Protein Crystal Growth Dynamics and Impurity Incorporation

NASA Technical Reports Server (NTRS)

Chernov, Alex A.; Thomas, Bill

2000-01-01

The general concepts and theories of crystal growth are proven to work for biomolecular crystallization. This allowed us to extract basic parameters controlling growth kinetics - free surface energy, alpha, and kinetic coefficient, beta, for steps. Surface energy per molecular site in thermal units, alpha(omega)(sup 2/3)/kT approx. = 1, is close to the one for inorganic crystals in solution (omega is the specific molecular volume, T is the temperature). Entropic restrictions on incorporation of biomolecules into the lattice reduce the incorporation rate, beta, by a factor of 10(exp 2) - 10(exp 3) relative to inorganic crystals. A dehydration barrier of approx. 18kcal/mol may explain approx. 10(exp -6) times difference between frequencies of adding a molecule to the lattice and Brownian attempts to do so. The latter was obtained from AFM measurements of step and kink growth rates on orthorhombic lysozyme. Protein and many inorganic crystals typically do not belong to the Kossel type, thus requiring a theory to account for inequivalent molecular positions within its unit cell. Orthorhombic lysozyme will serve as an example of how to develop such a theory. Factors deteriorating crystal quality - stress and strain, mosaicity, molecular disorder - will be reviewed with emphasis on impurities. Dimers in ferritin and lysozyme and acetylated lysozyme, are microheterogeneous i.e. nearly isomorphic impurities that are shown to be preferentially trapped by tetragonal lysozyme and ferritin crystals, respectively. The distribution coefficient, K defined as a ratio of the (impurity/protein) ratios in crystal and in solution is a measure of trapping. For acetylated lysoyzme, K = 2.15 or, 3.42 for differently acetylated forms, is independent of both the impurity and the crystallizing protein concentration. The reason is that impurity flux to the surface is constant while the growth rate rises with supersaturation. About 3 times lower dimer concentration in space grown ferritin and lysozyme crystals might be examples explaining higher quality of the space grown protein crystal. Depletion of solution with respect to isomorphic impurities around a growing crystal may be K times deeper than with respect to the crystallizing protein.

A simultaneous deep micromachining and surface passivation method suitable for silicon-based devices

NASA Astrophysics Data System (ADS)

Babaei, E.; Gharooni, M.; Mohajerzadeh, S.; Soleimani, E. A.

2018-07-01

Three novel methods for simultaneous micromachining and surface passivation of silicon are reported. A thin passivation layer is achieved using continuous and sequential plasma processes based on SF6, H2 and O2 gases. Reducing the recombination by surface passivation is crucial for the realization of high-performance nanosized optoelectronic devices. The passivation of the surface as an important step, is feasible by plasma processing based on hydrogen pulses in proper time-slots or using a mixture of H2 and O2, and SF6 gases. The passivation layer which is formed in situ during the micromachining process obviates a separate passivation step needed in conventional methods. By adjusting the plasma parameters such as power, duration, and flows of gases, the process can be controlled for the best results and acceptable under-etching at the same time. Moreover, the pseudo-oxide layer which is formed during the micromachining processes will also improve the electrical characteristics of the surface, which can be used as an add-on for micro and nanowire applications. To quantify the effect of surface passivation in our method, ellipsometry, lifetime measurements, x-ray photoelectron spectroscopy, current–voltage and capacitance–voltage measurements and solar cell testing have been employed.

Material Surface Characteristics and Plasma Performance in the Lithium Tokamak Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lucia, Matthew James

The performance of a tokamak plasma and the characteristics of the surrounding plasma facing component (PFC) material surfaces strongly influence each other. Despite this relationship, tokamak plasma physics has historically been studied more thoroughly than PFC surface physics. The disparity is particularly evident in lithium PFC research: decades of experiments have examined the effect of lithium PFCs on plasma performance, but the understanding of the lithium surface itself is much less complete. This latter information is critical to identifying the mechanisms by which lithium PFCs affect plasma performance. This research focused on such plasma-surface interactions in the Lithium Tokamak Experimentmore » (LTX), a spherical torus designed to accommodate solid or liquid lithium as the primary PFC. Surface analysis was accomplished via the novel Materials Analysis and Particle Probe (MAPP) diagnostic system. In a series of experiments on LTX, the MAPP x-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) capabilities were used for in vacuo interrogation of PFC samples. This represented the first application of XPS and TDS for in situ surface analysis of tokamak PFCs. Surface analysis indicated that the thin (d ~ 100nm) evaporative lithium PFC coatings in LTX were converted to Li2O due to oxidizing agents in both the residual vacuum and the PFC substrate. Conversion was rapid and nearly independent of PFC temperature, forming a majority Li2O surface within minutes and an entirely Li2O surface within hours. However, Li2O PFCs were still capable of retaining hydrogen and sequestering impurities until the Li2O was further oxidized to LiOH, a process that took weeks. For hydrogen retention, Li2O PFCs retained H+ from LTX plasma discharges, but no LiH formation was observed. Instead, results implied that H+ was only weakly-bound, such that it almost completely outgassed as H2 within minutes. For impurity sequestration, LTX plasma performance—ascertained from plasma current and density measurements—progressively improved as plasma carbon and oxygen impurity levels fell. This was true for PFC conditioning by vacuum baking and argon glow discharge cleaning, as well as by lithium evaporation. Some evidence suggested that impurity sequestration was more important than hydrogen retention in enhancing LTX plasma performance. In contrast with expectations for lithium PFCs, heating the Li2O PFCs in LTX caused increased plasma impurity levels that tended to reduce plasma performance.« less

Effects of impurity adsorption on topological surface states of Bi2Te3

NASA Astrophysics Data System (ADS)

Shati, Khaqan; Arshad Farhan, M.; Selva Chandrasekaran, S.; Shim, Ji Hoon; Lee, Geunsik

2017-08-01

Electronic structures of Bi2Te3 with adsorption of Rb, In, Ga and Au atoms are studied by using the first-principle method, focusing on the effect of non-magnetic impurities on the topologically protected surface states. Upon monolayer formation, the bulk conduction band is moved down to the Fermi level with a significant Rashba splitting due to n-doping behavior with band modification details depending on the adatom chemistry. Our study shows the robustness of the intrinsic spin-momentum coupled surface band and emergence of a new similar one, which could provide helpful insight for developing novel spintronic devices.

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

PubMed

Jewett, Scott A; Ivanisevic, Albena

2012-09-18

In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can occur during sample transfer between solutions. The passivation of InAs is dominated by sulfur-based molecules, which form stable In-S bonds on the InAs surface. Both sulfides and alkanethiols form well-defined monolayers on InAs and are dominated by In-S interactions. Sulfur-passivated InAs surfaces prevent regrowth of the surface oxide layer and are more stable in air than unpassivated surfaces. Although functionalization of InAs with sulfur-based molecules effectively passivates the surface, future sensing applications may require the adsorption of functional biomolecules onto the InAs surface. Current research in this area focuses on the passivation abilities of biomolecules such as collagen binding peptides and amino acids. These biomolecules can physically adsorb onto InAs, and they demonstrate some passivation ability but not to the extent of sulfur-based molecules. Because these adsorbents do not form covalent bonds with the InAs surface, they do not effectively block oxide regrowth. A mixed adlayer containing a biomolecule and a thiol on the InAs surface provides one possible solution: these hybrid surfaces enhance passivation but also maintain the presence of a biomolecule on the surface. Such surface functionalization strategies on InAs could provide long-term stability and make these surfaces suitable for biological applications.

Atomic level characterization in corrosion studies

NASA Astrophysics Data System (ADS)

Marcus, Philippe; Maurice, Vincent

2017-06-01

Atomic level characterization brings fundamental insight into the mechanisms of self-protection against corrosion of metals and alloys by oxide passive films and into how localized corrosion is initiated on passivated metal surfaces. This is illustrated in this overview with selected data obtained at the subnanometre, i.e. atomic or molecular, scale and also at the nanometre scale on single-crystal copper, nickel, chromium and stainless steel surfaces passivated in well-controlled conditions and analysed in situ and/or ex situ by scanning tunnelling microscopy/spectroscopy and atomic force microscopy. A selected example of corrosion modelling by ab initio density functional theory is also presented. The discussed aspects include the surface reconstruction induced by hydroxide adsorption and formation of two-dimensional (hydr)oxide precursors, the atomic structure, orientation and surface hydroxylation of three-dimensional ultrathin oxide passive films, the effect of grain boundaries in polycrystalline passive films acting as preferential sites of passivity breakdown, the differences in local electronic properties measured at grain boundaries of passive films and the role of step edges at the exposed surface of oxide grains on the dissolution of the passive film. This article is part of the themed issue 'The challenges of hydrogen and metals'.

Role of codeposited impurities during growth. I. Explaining distinctive experimental morphology on Cu(0 0 1)

NASA Astrophysics Data System (ADS)

Hamouda, Ajmi Bh.; Sathiyanarayanan, Rajesh; Pimpinelli, Alberto; Einstein, T. L.

2011-01-01

A unified explanation of the physics underlying all the distinctive features of the growth instabilities observed on Cu vicinals has long eluded theorists. Recently, kinetic Monte Carlo studies showed that codeposition of impurities during growth could account for the key distinctive experimental observations [Hamouda , Phys. Rev. BPLRBAQ0556-280510.1103/PhysRevB.77.245430 77, 245430 (2008)]. To identify the responsible impurity atom, we compute the nearest-neighbor binding energies (ENN) and terrace diffusion barriers (Ed) for several candidate impurity atoms on Cu(0 0 1) using DFT-based VASP. Our calculations show that codeposition (with Cu) of midtransition elements, such as Fe, Mn, and W, could—in conjunction with substantial Ehrlich-Schwoebel barriers—cause the observed instabilities; when the experimental setup is considered, W emerges to be the most likely candidate. We discuss the role of impurities in nanostructuring of surfaces.

Nonmagnetic impurity resonances as a signature of sign-reversal pairing in FeAs-based superconductors.

PubMed

Zhang, Degang

2009-10-30

The energy band structure of FeAs-based superconductors is fitted by a tight-binding model with two Fe ions per unit cell and two degenerate orbitals per Fe ion. Based on this, superconductivity with extended s-wave pairing symmetry of the form cosk(x)+cosk(y) is examined. The local density of states near an impurity is also investigated by using the T-matrix approach. For the nonmagnetic scattering potential, we found that there exist two major resonances inside the gap. The height of the resonance peaks depends on the strength of the impurity potential. These in-gap resonances are originated in the Andreev's bound states due to the quasiparticle scattering between the hole Fermi surfaces around Gamma point with positive order parameter and the electron Fermi surfaces around M point with negative order parameter.

Plasma Interactions with Mixed Materials and Impurity Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rognlien, T. D.; Beiersdorfer, Peter; Chernov, A.

2016-10-28

The project brings together three discipline areas at LLNL to develop advanced capability to predict the impact of plasma/material interactions (PMI) on metallic surfaces in magnetic fusion energy (MFE) devices. These areas are (1) modeling transport of wall impurity ions through the edge plasma to the core plasma, (2) construction of a laser blow-off (LBO) system for injecting precise amounts of metallic atoms into a tokamak plasma, and (3) material science analysis of fundamental processes that modify metallic surfaces during plasma bombardment. The focus is on tungsten (W), which is being used for the ITER divertor and in designs ofmore » future MFE devices. In area (1), we have worked with the University of California, San Diego (UCSD) on applications of the UEDGE/DUSTT coupled codes to predict the influx of impurity ions from W dust through the edge plasma, including periodic edge-plasma oscillations, and revived a parallel version of UEDGE to speed up these simulations. In addition, the impurity transport model in the 2D UEDGE code has been implemented into the 3D BOUT++ turbulence/transport code to allow fundamental analysis of the impact of strong plasma turbulence on the impurity transport. In area (2), construction and testing of the LBO injection system has been completed. The original plan to install the LBO on the National Spherical Torus Experiment Upgrade (NSTX-U) at Princeton and its use to validate the impurity transport simulations is delayed owing to NSTX-U being offline for substantial magnetic coil repair period. In area (3), an analytic model has been developed to explain the growth of W tendrils (or fuzz) observed for helium-containing plasmas. Molecular dynamics calculations of W sputtering by W and deuterium (D) ions shows that a spatial blending of interatomic potentials is needed to describe the near-surface and deeper regions of the material.« less

Surface passivation and aging of InGaAs/InP heterojunction phototransistors

NASA Astrophysics Data System (ADS)

Park, Min-Su; Razaei, Mohsen; Barnhart, Katie; Tan, Chee Leong; Mohseni, Hooman

2017-06-01

We report the effect of different surface treatment and passivation techniques on the stability of InGaAs/InP heterojunction phototransistors (HPTs). An In0.53Ga0.47As surface passivated with aqueous ammonium sulfide ((NH4)2S), aluminum oxide (Al2O3) grown by atomic layer deposition (ALD), and their combination is evaluated by using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). All samples were kept in the air ambient, and their performances were periodically measured to investigate their long-term stability. Raman spectroscopy revealed that the peak intensity of the GaAs-like longitudinal optical phonon of all passivated samples is decreased compared with that of the control sample. This is attributable to the diminution of the carriers near the passivated surfaces, which was proven by extracted surface potential (Vs). The Vs of all passivated samples was decreased to less than half of that for the control sample. XPS evaluation of As3d spectra showed that arsenic oxides (As2O3 and As2O5) on the surfaces of the samples can be removed by passivation. However, both Raman and XPS spectra show that the (NH4)2S passivated sample reverts back over time and will resemble the untreated control sample. When capped with ALD-grown Al2O3, passivated samples irrespective of the pretreatment show no degradation over the measured time of 4 weeks. Similar conclusions are made from our experimental measurement of the performance of differently passivated HPTs. The ALD-grown Al2O3 passivated devices show an improved optical gain at low optical powers and long-term stability.

Impurity effects on ionic-liquid-based supercapacitors

DOE PAGES

Liu, Kun; Lian, Cheng; Henderson, Douglas; ...

2016-12-27

Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface ofmore » a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. As a result, by comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.« less

Mesoscale Elucidation of Surface Passivation in the Li–Sulfur Battery Cathode

DOE PAGES

Liu, Zhixiao; Mukherjee, Partha P.

2017-01-23

We report the cathode surface passivation caused by Li 2S precipitation adversely affects the performance of lithium-sulfur (Li-S) batteries. Li 2S precipitation is a complicated mesoscale process involving adsorption, desorption and diffusion kinetics, which are affected profoundly by the reactant concentration and operating temperature. In this work, a mesoscale interfacial model is presented to study the growth of Li 2S film on carbon cathode surface. Li 2S film growth experiences nucleation, isolated Li 2S island growth and island coalescence. The slow adsorption rate at small S 2- concentration inhibits the formation of nucleation seeds and the lateral growth of Limore » 2S islands, which deters surface passivation. An appropriate operating temperature, especially in the medium-to-high temperature range, can also defer surface passivation. Fewer Li 2S nucleation seeds form in such an operating temperature range, which facilitates heterogeneous growth and thereby inhibits the lateral growth of the Li 2S film, which may also result in reduced surface passivation. Finally, the high specific surface area of the cathode microstructure is expected to mitigate the surface passivation.« less

Role of the carbonate impurities on the surface state of pyrite and arsenopyrite under treatment by high power electromagnetic pulses (HPEMP): oxidation of 50-100 μm size particles

NASA Astrophysics Data System (ADS)

Filippova, I.; Chanturiya, V.; Filippov, L.; Ryazantseva, M.; Bunin, I.

2013-03-01

Diffuse Reflectance Infrared Fourier Transform Spectroscopy (DRIFTS) and Transmission Electron Microscopy (TEM) have shown the variation of surface phase compositions of carbonate bearing pyrite and arsenopyrite as a result of the combined action of chemical oxidation and thermal processes after the treatment by high power electromagnetic pulses (HPEMP). The monitoring of the surface phase composition allowed to determine the correlation between the treatment conditions, the surface phase composition, and the flotation yield. Thus, HPEMP treatment may be regarded as a tool controlling the surface composition and the sorption ability of flotation collector onto minerals surface, and therefore, allowing to control the hydrophobic-hydrophilic surface balance. It was confirmed in this study that the flotation of pyrite with xanthate as a result of the influence HPEMP may vary depending on the presence of impurities such as calcite.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Surface-induced magnetism of the solids with impurities and vacancies

NASA Astrophysics Data System (ADS)

Morozovska, A. N.; Eliseev, E. A.; Glinchuk, M. D.; Blinc, R.

2011-04-01

Using the quantum-mechanical approach combined with the image charge method we calculated the lowest energy levels of the impurities and neutral vacancies with two electrons or holes located in the vicinity of flat surface of different solids. Unexpectedly we obtained that the magnetic triplet state is the ground state of the impurities and neutral vacancies in the vicinity of surface, while the nonmagnetic singlet is the ground state in the bulk, for e.g. He atom, Li+, Be++ ions, etc. The energy difference between the lowest triplet and singlet states strongly depends on the electron (hole) effective mass μ, dielectric permittivity of the solid ε2 and the distance from the surface z0. For z0=0 and defect charge ∣Z∣=2 the energy difference is more than several hundreds of Kelvins at μ=(0.5-1)me and ε2=2-10, more than several tens of Kelvins at μ=(0.1-0.2)me and ε2=5-10, and not more than several Kelvins at μ<0.1me and ε2>15 (me is the mass of a free electron). Pair interaction of the identical surface defects (two doubly charged impurities or vacancies with two electrons or holes) reveals the ferromagnetic spin state with the maximal exchange energy at the definite distance between the defects (∼5-25 nm). We estimated the critical concentration of surface defects and transition temperature of ferromagnetic long-range order appearance in the framework of percolation and mean field theories, and RKKY approach for semiconductors like ZnO. We obtained that the nonmagnetic singlet state is the lowest one for a molecule with two electrons formed by a pair of identical surface impurities (like surface hydrogen), while its next state with deep enough negative energy minimum is the magnetic triplet. The metastable magnetic triplet state appeared for such molecule at the surface indicates the possibility of metastable ortho-states of the hydrogen-like molecules, while they are absent in the bulk of material. The two series of spectral lines are expected due to the coexistence of ortho- and para-states of the molecules at the surface. We hope that obtained results could provide an alternative mechanism of the room temperature ferromagnetism observed in TiO2, HfO2, and In2O3 thin films with contribution of the oxygen vacancies. We expect that both anion and cation vacancies near the flat surface act as magnetic defects because of their triplet ground state and Hund's rule. The theoretical forecasts are waiting for experimental justification allowing for the number of the defects in the vicinity of surface is much larger than in the bulk of as-grown samples.

Black silicon significantly enhances phosphorus diffusion gettering.

PubMed

Pasanen, Toni P; Laine, Hannu S; Vähänissi, Ville; Schön, Jonas; Savin, Hele

2018-01-31

Black silicon (b-Si) is currently being adopted by several fields of technology, and its potential has already been demonstrated in various applications. We show here that the increased surface area of b-Si, which has generally been considered as a drawback e.g. in applications that require efficient surface passivation, can be used as an advantage: it enhances gettering of deleterious metal impurities. We demonstrate experimentally that interstitial iron concentration in intentionally contaminated silicon wafers reduces from 1.7 × 10 13  cm -3 to less than 10 10  cm -3 via b-Si gettering coupled with phosphorus diffusion from a POCl 3 source. Simultaneously, the minority carrier lifetime increases from less than 2 μs of a contaminated wafer to more than 1.5 ms. A series of different low temperature anneals suggests segregation into the phosphorus-doped layer to be the main gettering mechanism, a notion which paves the way of adopting these results into predictive process simulators. This conclusion is supported by simulations which show that the b-Si needles are entirely heavily-doped with phosphorus after a typical POCl 3 diffusion process, promoting iron segregation. Potential benefits of enhanced gettering by b-Si include the possibility to use lower quality silicon in high-efficiency photovoltaic devices.

Stable surface passivation process for compound semiconductors

DOEpatents

Ashby, Carol I. H.

2001-01-01

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, B.

The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PVmore » energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.« less

Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform

NASA Astrophysics Data System (ADS)

Islam, M. F.; Canali, C. M.; Pertsova, A.; Balatsky, A.; Mahatha, S. K.; Carbone, C.; Barla, A.; Kokh, K. A.; Tereshchenko, O. E.; Jiménez, E.; Brookes, N. B.; Gargiani, P.; Valvidares, M.; Schatz, S.; Peixoto, T. R. F.; Bentmann, H.; Reinert, F.; Jung, J.; Bathon, T.; Fauth, K.; Bode, M.; Sessi, P.

2018-04-01

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb2Te3 . By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-ray magnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb2Te3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb2Te3 in the ferromagnetic state.

Surface impedance and optimum surface resistance of a superconductor with an imperfect surface

NASA Astrophysics Data System (ADS)

Gurevich, Alex; Kubo, Takayuki

2017-11-01

We calculate a low-frequency surface impedance of a dirty, s -wave superconductor with an imperfect surface incorporating either a thin layer with a reduced pairing constant or a thin, proximity-coupled normal layer. Such structures model realistic surfaces of superconducting materials which can contain oxide layers, absorbed impurities, or nonstoichiometric composition. We solved the Usadel equations self-consistently and obtained spatial distributions of the order parameter and the quasiparticle density of states which then were used to calculate a low-frequency surface resistance Rs(T ) and the magnetic penetration depth λ (T ) as functions of temperature in the limit of local London electrodynamics. It is shown that the imperfect surface in a single-band s -wave superconductor results in a nonexponential temperature dependence of Z (T ) at T ≪Tc which can mimic the behavior of multiband or d -wave superconductors. The imperfect surface and the broadening of the gap peaks in the quasiparticle density of states N (ɛ ) in the bulk give rise to a weakly temperature-dependent residual surface resistance. We show that the surface resistance can be optimized and even reduced below its value for an ideal surface by engineering N (ɛ ) at the surface using pair-breaking mechanisms, particularly by incorporating a small density of magnetic impurities or by tuning the thickness and conductivity of the normal layer and its contact resistance. The results of this work address the limit of Rs in superconductors at T ≪Tc , and the ways of engineering the optimal density of states by surface nanostructuring and impurities to reduce losses in superconducting microresonators, thin-film strip lines, and radio-frequency cavities for particle accelerators.

Handbook on passive thermal control coatings

NASA Technical Reports Server (NTRS)

Mookherji, T. K.; Hayes, J. D.

1973-01-01

A handbook of passive thermal control surfaces data pertaining to the heat transfer requirements of spacecraft is presented. Passive temperature control techniques and the selection of control surfaces are analyzed. The space environmental damage mechanisms in passive thermal control surfaces are examined. Data on the coatings for which technical information is available are presented in tabular form. Emphasis was placed on consulting only those references where the experimental simulation of the space environment appeared to be more appropriate.

Passivation of phosphorus diffused silicon surfaces with Al{sub 2}O{sub 3}: Influence of surface doping concentration and thermal activation treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richter, Armin, E-mail: armin.richter@ise.fraunhofer.de; Benick, Jan; Kimmerle, Achim

2014-12-28

Thin layers of Al{sub 2}O{sub 3} are well known for the excellent passivation of p-type c-Si surfaces including highly doped p{sup +} emitters, due to a high density of fixed negative charges. Recent results indicate that Al{sub 2}O{sub 3} can also provide a good passivation of certain phosphorus-diffused n{sup +} c-Si surfaces. In this work, we studied the recombination at Al{sub 2}O{sub 3} passivated n{sup +} surfaces theoretically with device simulations and experimentally for Al{sub 2}O{sub 3} deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal duemore » to depletion or weak inversion of the charge carriers at the c-Si/Al{sub 2}O{sub 3} interface. This pronounced maximum was also observed experimentally for n{sup +} surfaces passivated either with Al{sub 2}O{sub 3} single layers or stacks of Al{sub 2}O{sub 3} capped by SiN{sub x}, when activated with a low temperature anneal (425 °C). In contrast, for Al{sub 2}O{sub 3}/SiN{sub x} stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n{sup +} diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al{sub 2}O{sub 3}/SiN{sub x} stacks can provide not only excellent passivation on p{sup +} surfaces but also on n{sup +} surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments.« less

FRACTIONAL DISTILLATION SEPARATION OF PLUTONIUM VALUES FROM LIGHT ELEMENT VALUES

DOEpatents

Cunningham, B.B.

1957-12-17

A process is described for removing light element impurities from plutonium. It has been found that plutonium contaminated with impurities may be purified by converting the plutonium to a halide and purifying the halide by a fractional distillation whereby impurities may be distilled from the plutonium halide. A particularly effective method includes the step of forming a lower halide such as the trior tetrahalide and distilling the halide under conditions such that no decomposition of the halide occurs. Molecular distillation methods are particularly suitable for this process. The apparatus may comprise an evaporation plate with means for heating it and a condenser surface with means for cooling it. The condenser surface is placed at a distance from the evaporating surface less than the mean free path of molecular travel of the material being distilled at the pressure and temperature used. The entire evaporating system is evacuated until the pressure is about 10/sup -4/ millimeters of mercury. A high temperuture method is presented for sealing porous materials such as carbon or graphite that may be used as a support or a moderator in a nuclear reactor. The carbon body is subjected to two surface heats simultaneously in an inert atmosphere; the surface to be sealed is heated to 1500 degrees centigrade; and another surface is heated to 300 degrees centigrade, whereupon the carbon vaporizes and flows to the cooler surface where it is deposited to seal that surface. This method may be used to seal a nuclear fuel in the carbon structure.

Passivation Of High-Temperature Superconductors

NASA Technical Reports Server (NTRS)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

Defect physics in intermediate-band materials: Insights from an optimized hybrid functional

NASA Astrophysics Data System (ADS)

Han, Miaomiao; Zeng, Zhi; Frauenheim, Thomas; Deák, Peter

2017-10-01

Despite the efforts to implement the idea of a deep level impurity intermediate band (IB) into bulk solar cell materials, a breakthrough in efficiency increase has not yet been achieved. Taking Sn-doped CuGaS2 as an example, we investigate the problem here from the perspective of defect physics, considering all possible charge states of the dopant and its interaction with native defects. Using an optimized hybrid functional, we find that SnGa has not only a donor-type (+/0), but also an acceptor-type (0 /- ) charge transition level. We estimate the probability of the optical transition of an electron from/to the neutral defect to/from the conduction-band edge to be about equal, therefore, the lifetimes of the excited carriers are probably quite short, limiting the enhancement of the photocurrent. In addition, we find that doping with SnGa leads to the spontaneous formation of the intrinsic acceptor CuGa defects which passivate the donor SnGa and pin the Fermi level to a position (1.4 eV above the valence-band edge) where both defects are ionized. As a result, the possibility of absorption in the middle of the visible range gets lost. These two recombination and passivation mechanisms appear to be quite likely the case for other donors and other similar host materials as well, explaining some of the experimental bottlenecks with IB solar cells based on deep level impurities.

Numerical Study of Nonlinear Structures of Locally Excited Marangoni Convection in the Long-Wave Approximation

NASA Astrophysics Data System (ADS)

Wertgeim, Igor I.

2018-02-01

We investigate stationary and non-stationary solutions of nonlinear equations of the long-wave approximation for the Marangoni convection caused by a localized source of heat or a surface active impurity (surfactant) in a thin horizontal layer of a viscous incompressible fluid with a free surface. The distribution of heat or concentration flux is determined by the uniform vertical gradient of temperature or impurity concentration, distorted by the imposition of a slightly inhomogeneous heating or of surfactant, localized in the horizontal plane. The lower boundary of the layer is considered thermally insulated or impermeable, whereas the upper boundary is free and deformable. The equations obtained in the long-wave approximation are formulated in terms of the amplitudes of the temperature distribution or impurity concentration, deformation of the surface, and vorticity. For a simplification of the problem, a sequence of nonlinear equations is obtained, which in the simplest form leads to a nonlinear Schrödinger equation with a localized potential. The basic state of the system, its dependence on the parameters and stability are investigated. For stationary solutions localized in the region of the surface tension inhomogeneity, domains of parameters corresponding to different spatial patterns are delineated.

46 CFR 170.295 - Special consideration for free surface of passive roll stabilization tanks.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 7 2011-10-01 2011-10-01 false Special consideration for free surface of passive roll stabilization tanks. 170.295 Section 170.295 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... consideration for free surface of passive roll stabilization tanks. (a) The virtual increase in the vertical...

Passive Standoff Detection of Chemical Warfare Agents on Surfaces

NASA Astrophysics Data System (ADS)

Thériault, Jean-Marc; Puckrin, Eldon; Hancock, Jim; Lecavalier, Pierre; Lepage, Carmela Jackson; Jensen, James O.

2004-11-01

Results are presented on the passive standoff detection and identification of chemical warfare (CW) liquid agents on surfaces by the Fourier-transform IR radiometry. This study was performed during surface contamination trials at Defence Research and Development Canada-Suffield in September 2002. The goal was to verify that passive long-wave IR spectrometric sensors can potentially remotely detect surfaces contaminated with CW agents. The passive sensor, the Compact Atmospheric Sounding Interferometer, was used in the trial to obtain laboratory and field measurements of CW liquid agents, HD and VX. The agents were applied to high-reflectivity surfaces of aluminum, low-reflectivity surfaces of Mylar, and several other materials including an armored personnel carrier. The field measurements were obtained at a standoff distance of 60 m from the target surfaces. Results indicate that liquid contaminant agents deposited on high-reflectivity surfaces can be detected, identified, and possibly quantified with passive sensors. For low-reflectivity surfaces the presence of the contaminants can usually be detected; however, their identification based on simple correlations with the absorption spectrum of the pure contaminant is not possible.

Effect of surface pre-treatments on biocompatibility of magnesium.

PubMed

Lorenz, Carla; Brunner, Johannes G; Kollmannsberger, Philip; Jaafar, Leila; Fabry, Ben; Virtanen, Sannakaisa

2009-09-01

This study reports the influence of Mg surface passivation on the survival rate of human HeLa cells and mouse fibroblasts in cell culture experiments. Polished samples of commercially pure Mg show high reactivity in the cell culture medium, leading to a pH shift in the alkaline direction, and therefore cell adhesion and survival is strongly impaired. Passivation of the Mg surface in 1M NaOH can strongly enhance cell survival. The best initial cell adhesion is observed for Mg samples incubated in simulated body fluid (M-SBF), which leads to the formation of a biomimetic, amorphous Ca/Mg-phosphate layer with high surface roughness. This surface layer, however, passivates and seals the Mg surface only partially. Subsequent Mg dissolution leads to a significantly stronger pH increase compared to NaOH-passivated samples, which prevents long-term cell survival. These results demonstrate that surface passivation with NaOH and M-SBF together with the associated changes of surface reactivity, chemistry and roughness provide a viable strategy to facilitate cell survival on otherwise non-biocompatible Mg surfaces.

Surface passivation of semiconducting oxides by self-assembled nanoparticles

PubMed Central

Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

2016-01-01

Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

NASA Astrophysics Data System (ADS)

Black, Lachlan E.; Kessels, W. M. M. Erwin

2018-05-01

Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

On neoclassical impurity transport in stellarator geometry

NASA Astrophysics Data System (ADS)

García-Regaña, J. M.; Kleiber, R.; Beidler, C. D.; Turkin, Y.; Maaßberg, H.; Helander, P.

2013-07-01

The impurity dynamics in stellarators has become an issue of moderate concern due to the inherent tendency of the impurities to accumulate in the core when the neoclassical ambipolar radial electric field points radially inwards (ion root regime). This accumulation can lead to collapse of the plasma due to radiative losses, and thus limit high performance plasma discharges in non-axisymmetric devices. A quantitative description of the neoclassical impurity transport is complicated by the breakdown of the assumption of small E × B drift and trapping due to the electrostatic potential variation on a flux surface \\tilde{\\Phi} compared with those due to the magnetic field gradient. This work examines the impact of this potential variation on neoclassical impurity transport in the Large Helical Device heliotron. It shows that the neoclassical impurity transport can be strongly affected by \\tilde{\\Phi} . The central numerical tool used is the δf particle in cell Monte Carlo code EUTERPE. The \\tilde{\\Phi} used in the calculations is provided by the neoclassical code GSRAKE. The possibility of obtaining a more general \\tilde{\\Phi} self-consistently with EUTERPE is also addressed and a preliminary calculation is presented.

Effects of positive ion implantation into antireflection coating of silicon solar cells

NASA Technical Reports Server (NTRS)

Middleton, A. E.; Harpster, J. W.; Collis, W. J.; Kim, C. K.

1971-01-01

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Method and apparatus for detecting the presence and thickness of carbon and oxide layers on EUV reflective surfaces

DOEpatents

Malinowski, Michael E.

2005-01-25

The characteristics of radiation that is reflected from carbon deposits and oxidation formations on highly reflective surfaces such as Mo/Si mirrors can be quantified and employed to detect and measure the presence of such impurities on optics. Specifically, it has been shown that carbon deposits on a Mo/Si multilayer mirror decreases the intensity of reflected HeNe laser (632.8 nm) light. In contrast, oxide layers formed on the mirror should cause an increase in HeNe power reflection. Both static measurements and real-time monitoring of carbon and oxide surface impurities on optical elements in lithography tools should be achievable.

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm.

PubMed

Ghaemi, Pouyan; Nair, V P

2016-01-22

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Effect of Impurities on the Josephson Current through Helical Metals: Exploiting a Neutrino Paradigm

NASA Astrophysics Data System (ADS)

Ghaemi, Pouyan; Nair, V. P.

2016-01-01

In this Letter we study the effect of time-reversal symmetric impurities on the Josephson supercurrent through two-dimensional helical metals such as on a topological insulator surface state. We show that, contrary to the usual superconducting-normal metal-superconducting junctions, the suppression of the supercurrent in the superconducting-helical metal-superconducting junction is mainly due to fluctuations of impurities in the junctions. Our results, which are a condensed matter realization of a part of the Mikheyev-Smirnov-Wolfenstein effect for neutrinos, show that the relationship between normal state conductance and the critical current of Josephson junctions is significantly modified for Josephson junctions on the surface of topological insulators. We also study the temperature dependence of the supercurrent and present a two fluid model which can explain some of the recent experimental results in Josephson junctions on the edge of topological insulators.

Surface characteristics, corrosion and bioactivity of chemically treated biomedical grade NiTi alloy.

PubMed

Chembath, Manju; Balaraju, J N; Sujata, M

2015-11-01

The surface of NiTi alloy was chemically modified using acidified ferric chloride solution and the characteristics of the alloy surface were studied from the view point of application as a bioimplant. Chemically treated NiTi was also subjected to post treatments by annealing at 400°C and passivation in nitric acid. The surface of NiTi alloy after chemical treatment developed a nanogrid structure with a combination of one dimensional channel and two dimensional network-like patterns. From SEM studies, it was found that the undulations formed after chemical treatment remained unaffected after annealing, while after passivation process the undulated surface was filled with oxides of titanium. XPS analysis revealed that the surface of passivated sample was enriched with oxides of titanium, predominantly TiO2. The influence of post treatment on the corrosion resistance of chemically treated NiTi alloy was monitored using Potentiodynamic Polarization and Electrochemical Impedance Spectroscopy (EIS) in Phosphate Buffered Saline (PBS) solution. In the chemically treated condition, NiTi alloy exhibited poor corrosion resistance due to the instability of the surface. On the other hand, the breakdown potential (0.8V) obtained was highest for the passivated samples compared to other surface treated samples. During anodic polarization, chemically treated samples displayed dissolution phenomenon which was predominantly activation controlled. But after annealing and passivation processes, the behavior of anodic polarization was typical of a diffusion controlled process which confirmed the enhanced passivity of the post treated surfaces. The total resistance, including the porous and barrier layer, was in the range of mega ohms for passivated surfaces, which could be attributed to the decrease in surface nickel content and formation of compact titanium oxide. The passivated sample displayed good bioactivity in terms of hydroxyapatite growth, noticed after 14days immersion in Hanks' solution. Copyright © 2015 Elsevier B.V. All rights reserved.

Reverse Non-Equilibrium Molecular Dynamics Demonstrate That Surface Passivation Controls Thermal Transport at Semiconductor-Solvent Interfaces.

PubMed

Hannah, Daniel C; Gezelter, J Daniel; Schaller, Richard D; Schatz, George C

2015-06-23

We examine the role played by surface structure and passivation in thermal transport at semiconductor/organic interfaces. Such interfaces dominate thermal transport in semiconductor nanomaterials owing to material dimensions much smaller than the bulk phonon mean free path. Utilizing reverse nonequilibrium molecular dynamics simulations, we calculate the interfacial thermal conductance (G) between a hexane solvent and chemically passivated wurtzite CdSe surfaces. In particular, we examine the dependence of G on the CdSe slab thickness, the particular exposed crystal facet, and the extent of surface passivation. Our results indicate a nonmonotonic dependence of G on ligand-grafting density, with interfaces generally exhibiting higher thermal conductance for increasing surface coverage up to ∼0.08 ligands/Å(2) (75-100% of a monolayer, depending on the particular exposed facet) and decreasing for still higher coverages. By analyzing orientational ordering and solvent penetration into the ligand layer, we show that a balance of competing effects is responsible for this nonmonotonic dependence. Although the various unpassivated CdSe surfaces exhibit similar G values, the crystal structure of an exposed facet nevertheless plays an important role in determining the interfacial thermal conductance of passivated surfaces, as the density of binding sites on a surface determines the ligand-grafting densities that may ultimately be achieved. We demonstrate that surface passivation can increase G relative to a bare surface by roughly 1 order of magnitude and that, for a given extent of passivation, thermal conductance can vary by up to a factor of ∼2 between different surfaces, suggesting that appropriately tailored nanostructures may direct heat flow in an anisotropic fashion for interface-limited thermal transport.

Examining the free radical bonding mechanism of benzoquinone- and hydroquinone-methanol passivation of silicon surfaces

NASA Astrophysics Data System (ADS)

Kotulak, Nicole A.; Chen, Meixi; Schreiber, Nikolas; Jones, Kevin; Opila, Robert L.

2015-11-01

The surface passivation of p-benzoquinone (BQ) and hydroquinone (HQ) when dissolved in methanol (ME) has been examined through effective lifetime testing of crystalline silicon (c-Si) wafers treated with the aforementioned solutions. Changes in the availability of both photons and protons in the solutions were demonstrated to affect the level of passivation achieved. The requirement of both excess protons and ambient light exposure to maintain high effective lifetimes supports the presence of a free radical species that drives the surface passivation. Surface analysis suggests a 1:1 ratio of HQ-like bonds to methoxy bonds on the c-Si surface after treatment with a BQ/ME solution.

Imparting passivity to vapor deposited magnesium alloys

NASA Astrophysics Data System (ADS)

Wolfe, Ryan C.

Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning electron microscope. The corrosion rate of the nonequilibrium sputtered alloys, as determined by polarization resistance, is significantly reduced compared to the most corrosion resistant commercial magnesium alloys. The open circuit potentials of the sputter deposited alloys are significantly more noble compared to commercial, equilibrium phase magnesium alloys. Galvanic corrosion susceptibility has also been considerably reduced. Nonequilibrium magnesium-yttrium-titanium alloys have been shown to achieve passivity autonomously by alteration of the composition chemistry of the surface oxide/hydroxide layer. Self-healing properties are also evident, as corrosion propagation can be arrested after initial pitting of the material. A clear relationship exists between the corrosion resistance of sputter vapor deposited magnesium alloys and the amount of ion bombardment incurred by the alloy during deposition. Argon pressure, the distance between the source and the substrate, and alloy morphology play important roles in determining the ability of the alloy to develop a passive film. Thermal effects, both during and after alloy deposition, alter the stress state of the alloys, precipitation of second phases, and the mechanical stability of the passive film. An optimal thermal treatment has been developed in order to maximize the corrosion resistance of the magnesium-yttrium-titanium alloys. The significance of the results includes the acquisition of electrochemical data for these novel materials, as well as expanding the utilization of magnesium alloys by the improvement in their corrosion resistance. The magnesium alloys developed in this work are more corrosion resistant than any commercial magnesium alloy. Structural components comprised of these alloys would therefore exhibit unprecedented corrosion performance. Coatings of these alloys on magnesium components would provide a corrosion resistant yet galvanically-compatible coating. The broad impact of these contributions is that these new low-density, corrosion resistant magnesium alloys can be used to produce engineering components for vehicles that have greater acceleration, longer range, heavier payloads, lower life cycle costs, and longer inspection intervals.

Nonlinear spin susceptibility in topological insulators

NASA Astrophysics Data System (ADS)

Shiranzaei, Mahroo; Fransson, Jonas; Cheraghchi, Hosein; Parhizgar, Fariborz

2018-05-01

We revise the theory of the indirect exchange interaction between magnetic impurities beyond the linear response theory to establish the effect of impurity resonances in the surface states of a three-dimensional topological insulator. The interaction is composed of isotropic Heisenberg, anisotropic Ising, and Dzyaloshinskii-Moriya types of couplings. We find that all three contributions are finite at the Dirac point, which is in stark contrast to the linear response theory which predicts a vanishing Dzyaloshinskii-Moriya-type contribution. We show that the spin-independent component of the impurity scattering can generate large values of the Dzyaloshinskii-Moriya-type coupling in comparison with the Heisenberg and Ising types of couplings, while these latter contributions drastically reduce in magnitude and undergo sign changes. As a result, both collinear and noncollinear configurations are allowed magnetic configurations of the impurities.

Estimation of snow albedo reduction by light absorbing impurities using Monte Carlo radiative transfer model

NASA Astrophysics Data System (ADS)

Sengupta, D.; Gao, L.; Wilcox, E. M.; Beres, N. D.; Moosmüller, H.; Khlystov, A.

2017-12-01

Radiative forcing and climate change greatly depends on earth's surface albedo and its temporal and spatial variation. The surface albedo varies greatly depending on the surface characteristics ranging from 5-10% for calm ocean waters to 80% for some snow-covered areas. Clean and fresh snow surfaces have the highest albedo and are most sensitive to contamination with light absorbing impurities that can greatly reduce surface albedo and change overall radiative forcing estimates. Accurate estimation of snow albedo as well as understanding of feedbacks on climate from changes in snow-covered areas is important for radiative forcing, snow energy balance, predicting seasonal snowmelt, and run off rates. Such information is essential to inform timely decision making of stakeholders and policy makers. Light absorbing particles deposited onto the snow surface can greatly alter snow albedo and have been identified as a major contributor to regional climate forcing if seasonal snow cover is involved. However, uncertainty associated with quantification of albedo reduction by these light absorbing particles is high. Here, we use Mie theory (under the assumption of spherical snow grains) to reconstruct the single scattering parameters of snow (i.e., single scattering albedo ῶ and asymmetry parameter g) from observation-based size distribution information and retrieved refractive index values. The single scattering parameters of impurities are extracted with the same approach from datasets obtained during laboratory combustion of biomass samples. Instead of using plane-parallel approximation methods to account for multiple scattering, we have used the simple "Monte Carlo ray/photon tracing approach" to calculate the snow albedo. This simple approach considers multiple scattering to be the "collection" of single scattering events. Using this approach, we vary the effective snow grain size and impurity concentrations to explore the evolution of snow albedo over a wide wavelength range (300 nm - 2000 nm). Results will be compared with the SNICAR model to better understand the differences in snow albedo computation between plane-parallel methods and the statistical Monte Carlo methods.

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Gheshlaghi, N.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-01-01

Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs.

Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100).

PubMed

Collins, Gillian; Aureau, Damien; Holmes, Justin D; Etcheberry, Arnaud; O'Dwyer, Colm

2014-12-02

Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

Real-time assessment of surface interactions with titanium passivation layer by surface plasmon resonance

PubMed Central

Hirata, Isao; Yoshida, Yasuhiro; Nagaoka, Noriyuki; Hiasa, Kyou; Abe, Yasuhiko; Maekawa, Kenji; Kuboki, Takuo; Akagawa, Yasumasa; Suzuki, Kazuomi; Van Meerbeek, Bart; Messersmith, Phillip B.; Okazaki, Masayuki

2011-01-01

The high corrosion resistance and strength-to-density ratio makes titanium widely used in major industry, but also in a gamut of medical applications. Here we report for the first time on our development of a titanium passivation layer sensor that makes use of surface plasmon resonance (SPR). The deposited titanium metal layer on the sensor was passivated in air, like titanium medical devices. Our ‘Ti-SPR sensor’ enables analysis of biomolecules interactions with the passivated surface of titanium in real time. As a proof of concept, corrosion of titanium passivation layer exposed to acid was monitored in real time. Also, the Ti-SPR sensor can accurately measure the time-dependence of protein adsorption onto titanium passivation layer with a sub-nanogram per square millimeter accuracy. Besides such SPR analyses, an SPR-imaging (SPRI) enables real-time assessment of chemical surface processes that occur simultaneously at ‘multiple independent spots’ on the Ti-SPR sensor, such as acid-corrosion or adhesion of cells. Our Ti-SPR sensor will therefore be very useful to study titanium-corrosion phenomena and biomolecular titanium-surface interactions with application in a broad range of industrial and biomedical fields. PMID:22154862

Modeling the field of a passive scalar in a nonisothermal turbulent plane gas jet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrashin, V.N.; Barykin, V.N.; Martynenko, O.G.

The problem of the distribution of thermal characteristics in a plane nonisothermal turbulent gas jet in the case of large Reynolds numbers and a small temperature difference, allowing heat to be regarded as a passive impurity, is solved in the range of jet cross sections 20-100 caliber by a second-order correlational model of turbulence and an effective numerical algorithm. Analysis of the results show that the model allows computational data in good agreement with experiment to be obtained in the range of jet cross section 20-100 diameters. The relative error in determining the maximum values of the functions is 3-10%more » for the dynamic characteristics while the mean temperature and its mean square pulsations are determined with an accuracy of 5-10%; the corresponding figures for the thermal characteristics are 5-15% and 5-10%.« less

Diffusion barriers

NASA Technical Reports Server (NTRS)

Nicolet, M. A.

1983-01-01

The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

PROCESS FOR RECOVERY OF URANIUM VALUES FROM IMPURE SOLUTIONS THEREOF

DOEpatents

Kilner, S.B.

1959-11-01

A process is presented for the recovery of uraninm values from impure solutions which are obtained, for example, by washing residual uranium salt or uranium metal deposits from stainless steel surfaces using an aqueous or certain acidic aqueous solutions. The solutions include uranyl and oxidized iron, chromium, nickel, and copper ions and may contain manganese, zinc, and silver ions. In accordance with one procedure. the uranyl ions are reduced to the uranous state, and the impurity ions are complexed with cyanide under acidic conditions. The solution is then treated with ammonium hydroxide or alkali metal hydroxide to precipitate uranous hydroxide away from the complexed impurity ions in the solution. Alternatively, an excess of alkali metal cyanide is added to the reduced solution until the solution becomes sufficiently alkaline for the uranons hydroxide to precipitate. An essential feature in operating the process is in maintaining the pH of the solution sufficiently acid during the complexing operation to prevent the precipitation of the impurity metal hydroxides.

Long-term evolution of the impurity composition and impurity events with the ITER-like wall at JET

NASA Astrophysics Data System (ADS)

Coenen, J. W.; Sertoli, M.; Brezinsek, S.; Coffey, I.; Dux, R.; Giroud, C.; Groth, M.; Huber, A.; Ivanova, D.; Krieger, K.; Lawson, K.; Marsen, S.; Meigs, A.; Neu, R.; Puetterich, T.; van Rooij, G. J.; Stamp, M. F.; Contributors, JET-EFDA

2013-07-01

This paper covers aspects of long-term evolution of intrinsic impurities in the JET tokamak with respect to the newly installed ITER-like wall (ILW). At first the changes related to the change over from the JET-C to the JET-ILW with beryllium (Be) as the main wall material and tungsten (W) in the divertor are discussed. The evolution of impurity fluxes in the newly installed W divertor with respect to studying material migration is described. In addition, a statistical analysis of transient impurity events causing significant plasma contamination and radiation losses is shown. The main findings comprise a drop in carbon content (×20) (see also Brezinsek et al (2013 J. Nucl. Mater. 438 S303)), low oxygen content (×10) due to the Be first wall (Douai et al 2013 J. Nucl. Mater. 438 S1172-6) as well as the evolution of the material mix in the divertor. Initially, a short period of repetitive ohmic plasmas was carried out to study material migration (Krieger et al 2013 J. Nucl. Mater. 438 S262). After the initial 1600 plasma seconds the material surface composition is, however, still evolving. With operational time, the levels of recycled C are increasing slightly by 20% while the Be levels in the deposition-dominated inner divertor are dropping, hinting at changes in the surface layer material mix made of Be, C and W. A steady number of transient impurity events, consisting of W and constituents of inconel, is observed despite the increase in variation in machine operation and changes in magnetic configuration as well as the auxiliary power increase.

Role of the Muon in Semiconductor Research

NASA Astrophysics Data System (ADS)

Mengyan, Rick (P. W.)

Muons are used in semiconductor research as an experimentally accessible analog to the isolated Hydrogen (H) impurity - a complex that is very difficult (or impossible) to study by other means. Hydrogen impurities of any concentration can modify the electrical, optical or magnetic properties of the host. For instance, H can be incorporated to remove electrically active levels from the energy gap (i.e. passivation) while some can form isolated centers that tend to be responsible for the trap and release of charge carriers and participate in site and charge-state dynamics which certainly affect the electrical properties of the host. Therefore, it can be quite useful to characterize these impurities in semiconducting materials that are of interest for use in devices. A muon has the same charge and spin as a proton but a mass that is nine times lighter. When implanted in a target material, a positively charged muon can behave as a light proton or bind with an electron to form a complex known as Muonium (Mu) with properties that are very similar to that of ionic or neutral H, respectively. A result of these similarities and direct non-destructive implantation is that Mu provides a direct measure of local electronic structure, thermal stability and charge-state transitions of these impurity centers. Since any material can be subjected to muon implantation and it is the muons themselves that mimic the H impurity centers, these measurements do not depend (at all) on the host's solubility of hydrogen nor do they require some minimum concentration; unlike many other techniques, such as EPR, ENDOR, NMR, or IR vibrational spectroscopy. Here we summarize major contributions muons have made to the field of semiconductor research followed by a few case studies to demonstrate the technique and detailed knowledge of the physical and electronic structures as well as dynamics (e.g.: charge-state and site transitions; local motion; long-range diffusion) of Mu/H that can be obtained.

False-positive result when a diphenylcarbazide spot test is used on trivalent chromium-passivated zinc surfaces.

PubMed

Reveko, Valeriia; Lampert, Felix; Din, Rameez U; Thyssen, Jacob P; Møller, Per

2018-05-01

A colorimetric 1,5-diphenylcarbazide (DPC)-based spot test can be used to identify hexavalent chromium on various metallic and leather surfaces. DPC testing on trivalent chromium-passivated zinc surfaces has unexpectedly given positive results in some cases, apparently indicating the presence of hexavalent chromium; however, the presence of hexavalent chromium has never been confirmed with more sensitive and accurate test methods. To examine the presence of hexavalent chromium on trivalent chromium-passivated zinc surfaces with a DPC-based spot test. A colorimetric DPC spot test was used for the initial detection of hexavalent chromium on new and 1-year-aged trivalent chromium-passivated zinc surfaces. Then, X-ray photoelectron spectroscopy (XPS) was performed for all samples. The DPC spot test indicated the presence of hexavalent chromium in aged, but not new, trivalent chromium passivation on zinc; however, subsequent analysis by XPS could not confirm the presence of chromium in a hexavalent state. Unintended oxidation of DPC induced by atmospheric corrosion is suggested as a possible reason for the false-positive reaction of the DPC test on a trivalent chromium-passivated zinc surface. Further validation of the use of the DPC test for chromium-containing metallic surfaces is required. © 2018 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhixiao; Mukherjee, Partha P.

We report the cathode surface passivation caused by Li 2S precipitation adversely affects the performance of lithium-sulfur (Li-S) batteries. Li 2S precipitation is a complicated mesoscale process involving adsorption, desorption and diffusion kinetics, which are affected profoundly by the reactant concentration and operating temperature. In this work, a mesoscale interfacial model is presented to study the growth of Li 2S film on carbon cathode surface. Li 2S film growth experiences nucleation, isolated Li 2S island growth and island coalescence. The slow adsorption rate at small S 2- concentration inhibits the formation of nucleation seeds and the lateral growth of Limore » 2S islands, which deters surface passivation. An appropriate operating temperature, especially in the medium-to-high temperature range, can also defer surface passivation. Fewer Li 2S nucleation seeds form in such an operating temperature range, which facilitates heterogeneous growth and thereby inhibits the lateral growth of the Li 2S film, which may also result in reduced surface passivation. Finally, the high specific surface area of the cathode microstructure is expected to mitigate the surface passivation.« less

Microwave Induced Direct Bonding of Single Crystal Silicon Wafers

NASA Technical Reports Server (NTRS)

Budraa, N. K.; Jackson, H. W.; Barmatz, M.

1999-01-01

We have heated polished doped single-crystal silicon wafers in a single mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates. A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry's at positions of high magnetic field. This process was conducted in vacuum to exclude plasma effects. This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

Impurity incorporation, deposition kinetics, and microstructural evolution in sputtered Ta films

NASA Astrophysics Data System (ADS)

Whitacre, Jay Fredric

There is an increasing need to control the microstructure in thin sputtered Ta films for application as high-temperature coatings or diffusion barriers in microelectronic interconnect structures. To this end, the relationship between impurity incorporation, deposition kinetics, and microstructural evolution was examined for room-temperature low growth rate DC magnetron sputtered Ta films. Impurity levels present during deposition were controlled by pumping the chamber to various base pressures before growth. Ar pressures ranging from 2 to 20 mTorr were used to create contrasting kinetic environments in the sputter gas. This affected both the distribution of adatom kinetic energies at the substrate as well as the rate of impurity desorption from the chamber walls: at higher Ar pressures adatoms has lower kinetic energies, and there was an increase in impurity concentration. X-ray diffraction, high-resolution transmission electron microscopy (HREM), transmission electron diffraction (TED), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron. spectroscopy (XPS) were used to examine film crystallography, microstructure, and composition. A novel laboratory-based in-situ x-ray diffractometer was constructed. This new set-up allowed for the direct observation of microstructural evolution during growth. Films deposited at increasingly higher Ar pressures displayed a systematic decrease in grain size and degree of texturing, while surface morphology was found to vary from a nearly flat surface to a rough surface with several length scales of organization. In-situ x-ray results showed that the rate of texture evolution was found to be much higher in films grown using lower Ar pressures. These effects were studied in films less than 200 A thick using high resolution x-ray diffraction in conjunction with a synchrotron light source (SSRL B.L. 7-2). Films grown using higher Ar pressures (above 10 mTorr) with a pre-growth base pressure of 1 x 10--6 Torr had grains less than 10 nm in diameter and significant amorphous content Calculated radial distribution functions show a significant increase in average inter-atomic spacing in films grown using higher base pressures and Ar pressures. The amorphous content in the films was determined via comparison between ideal crystalline diffraction patterns and actual data. Thinner films grown at higher Ar pressures had relatively greater amorphous content. Real-time process control using the in-situ diffractometer was also demonstrated. The effects observed are discussed in the context of previous theories and experiments that document room-temperature sputter film growth. The changes in film microstructure observed were impurity mediated. Specifically, oxygen desorbed from the chamber walls during growth were incorporated into the film and subsequently limited grain development and texturing. A second phase consisting of amorphous Ta2O5 formed between the grain nuclei. Adatom kinetics played a role in determining surface morphology: at low Ar pressures (2 mTorr) significant adatom kinetic energies served to flattened the film surface, though impurity levels dominated grain development even in these conditions.

Surface potential of methyl isobutyl carbinol adsorption layer at the air/water interface.

PubMed

Phan, Chi M; Nakahara, Hiromichi; Shibata, Osamu; Moroi, Yoshikiyo; Le, Thu N; Ang, Ha M

2012-01-26

The surface potential (ΔV) and surface tension (γ) of MIBC (methyl isobutyl carbinol) were measured on the subphase of pure water and electrolyte solutions (NaCl at 0.02 and 2 M). In contrast to ionic surfactants, it was found that surface potential gradually increased with MIBC concentration. The ΔV curves were strongly influenced by the presence of NaCl. The available model in literature, in which surface potential is linearly proportional to surface excess, failed to describe the experimental data. Consequently, a new model, employing a partial charge of alcohol adsorption layer, was proposed. The new model predicted the experimental data consistently for MIBC in different NaCl solutions. However, the model required additional information for ionic impurity to predict adsorption in the absence of electrolyte. Such inclusion of impurities is, however, unnecessary for industrial applications. The modeling results successfully quantify the influence of electrolytes on surface potential of MIBC, which is critical for froth stability.

Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

NASA Astrophysics Data System (ADS)

Lee, Soonil; Ahn, Jaehyun; Mathew, Leo; Rao, Rajesh; Zhang, Zhongjian; Kim, Jae Hyun; Banerjee, Sanjay K.; Yu, Edward T.

2018-04-01

Surface passivation using intrinsic a-Si:H (i a-Si:H) films plays a key role in high efficiency c-Si heterojunction solar cells. In this study, we demonstrate improved passivation quality using i a-Si:H films with a gradient-layered structure consisting of interfacial, transition, and capping layers deposited on c-Si surfaces. The H2 dilution ratio (R) during deposition was optimized individually for the interfacial and capping layers, which were separated by a transition layer for which R changed gradually between its values for the interfacial and capping layers. This approach yielded a significant reduction in surface carrier recombination, resulting in improvement of the minority carrier lifetime from 1480 μs for mono-layered i a-Si:H passivation to 2550 μs for the gradient-layered passivation approach.

On the radiative effects of light-absorbing impurities on snowpack evolution

NASA Astrophysics Data System (ADS)

Dumont, M.; Tuzet, F.; Lafaysse, M.; Arnaud, L.; Picard, G.; Lejeune, Y.; Lamare, M.; Morin, S.; Voisin, D.; Di Mauro, B.

2017-12-01

The presence of light absorbing impurities in snow strongly decreases snow reflectance leading to an increase in the amount of solar energy absorbed by the snowpack. This effect is also known as impurities direct radiative effect. The change in the amount of energy absorbed by the snowpack modifies the temperature profile inside the snowpack and in turn snow metamorphism (impurities indirect radiative effects). In this work, we used the detailed snowpack model SURFEX/ISBA-Crocus with an explicit representation of snow light-absorbing impurities content (Tuzet et al., 2017) fed by medium-resolution ALADIN-Climate atmospheric model to represent dust and black carbon atmospheric deposition fluxes. The model is used at two sites: Col de Porte (medium elevation site in the French Alps) and Torgnon (high elevation site in the Italian Alps). The simulations are compared to in-situ observations and used to quantify the effects of light-absorbing impurities on snow melt rate and timing. The respective parts of the direct and indirect radiative effects of light-absorbing impurities in snow are also computed for the two sites, emphasizing the need to account for the interactions between snow metamorphism and LAI radiative properties, to accurately predict the effects of light-absorbing impurities in snow. Moreover, we describe how automated hyperspectral reflectance can be used to estimate effective impurities surface content in snow. Finally we demonstrate how these reflectances measurements either from in situ or satellite data can be used via an assimilation scheme to constrain snowpack ensemble simulations and better predict the snowpack state and evolution.

Method for producing highly reflective metal surfaces

DOEpatents

Arnold, J.B.; Steger, P.J.; Wright, R.R.

1982-03-04

The invention is a novel method for producing mirror surfaces which are extremely smooth and which have high optical reflectivity. The method includes depositing, by electrolysis, an amorphous layer of nickel on an article and then diamond-machining the resulting nickel surface to increase its smoothness and reflectivity. The machined nickel surface then is passivated with respect to the formation of bonds with electrodeposited nickel. Nickel then is electrodeposited on the passivated surface to form a layer of electroplated nickel whose inside surface is a replica of the passivated surface. The mandrel then may be-re-passivated and provided with a layer of electrodeposited nickel, which is then recovered from the mandrel providing a second replica. The mandrel can be so re-used to provide many such replicas. As compared with producing each mirror-finished article by plating and diamond-machining, the new method is faster and less expensive.

Role of bond adaptability in the passivation of colloidal quantum dot solids.

PubMed

Thon, Susanna M; Ip, Alexander H; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W; Carey, Graham H; Masala, Silvia; Sargent, Edward H

2013-09-24

Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance.

The effect of aluminium and sodium impurities on the in vitro toxicity and pro-inflammatory potential of cristobalite

USGS Publications Warehouse

Nattrass, C.; Horwell, Claire J.; Damby, David; Brown, David; Stone, Vicki

2017-01-01

BackgroundExposure to crystalline silica (SiO2), in the form of quartz, tridymite or cristobalite, can cause respiratory diseases, such as silicosis. However, the observed toxicity and pathogenicity of crystalline silica is highly variable. This has been attributed to a number of inherent and external factors, including the presence of impurities. In cristobalite-rich dusts, substitutions of aluminium (Al) for silicon (Si) in the cristobalite structure, and impurities occluding the silica surface, have been hypothesised to decrease its toxicity. This hypothesis is tested here through the characterisation and in vitro toxicological study of synthesised cristobalite with incremental amounts of Al and sodium (Na) dopants. MethodsSamples of synthetic cristobalite with incremental amounts of Al and Na impurities, and tridymite, were produced through heating of a silica sol-gel. Samples were characterised for mineralogy, cristobalite purity and abundance, particle size, surface area and surface charge. In vitro assays assessed the ability of the samples to induce cytotoxicity and TNF-α production in J774 macrophages, and haemolysis of red blood cells. ResultsAl-only doped or Al+Na co-doped cristobalite contained between 1 and 4 oxide wt% Al and Na within its structure. Co-doped samples also contained Al- and Na-rich phases, such as albite. Doping reduced cytotoxicity to J774 macrophages and haemolytic capacity compared to non-doped samples. Al-only doping was more effective at decreasing cristobalite reactivity than Al+Na co-doping. The reduction in the reactivity of cristobalite is attributed to both structural impurities and a lower abundance of crystalline silica in doped samples. Neither non-doped nor doped crystalline silica induced production of the pro-inflammatory cytokine TNF-α in J774 macrophages. ConclusionsImpurities can reduce the toxic potential of cristobalite and may help explain the low reactivity of some cristobalite-rich dusts. Whilst further work is required to determine if these effects translate to altered pathogenesis, the results have potential implications for the regulation of crystalline silica exposures.

Apparatus and method for measuring and imaging surface resistance

DOEpatents

Martens, Jon S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.

1993-08-24

Apparatus and method for determining and imaging superconductor surface resistance. The apparatus comprises modified Gaussian confocal resonator structure with the sample remote from the radiating mirror. Surface resistance is determined by analyzing and imaging reflected microwaves; imaging reveals anomalies due to surface impurities, non-stoichiometry, and the like, in the surface of the superconductor.

Effects of impurities on crystal growth in fructose crystallization

NASA Astrophysics Data System (ADS)

Chu, Y. D.; Shiau, L. D.; Berglund, K. A.

1989-10-01

The influence of impurities on the crystallization of anhydrous fructose from aqueous solution was studied. The growth kinetics of fructose crystals in the fructose-water-glucose and fructose-water-difructose dianhydrides systems were investigated using photomicroscopic contact nucleation techniques. Glucose is the major impurity likely to be present in fructose syrup formed during corn wet milling, while several difructose dianhydrides are formed in situ under crystallization conditions and have been proposed as a cause in the decrease of overall yields. Both sets of impurities were found to cause inhibition of crystal growth, but the mechanisms responsible in each case are different. It was found that the presence of glucose increases the solubility of fructose in water and thus lowers the supersaturation of the solution. This is probably the main effect responsible for the decrease of crystal growth. Since the molecular structures of difructose dianhydrides are similar to that of fructose, they are probably "tailor-made" impurities. The decrease of crystal growth is probably caused by the incorporation of these impurities into or adsorption to the crystal surface which would accept fructose molecules in the orientation that existed in the difructose dianhydride.

NBS: Materials measurements

NASA Technical Reports Server (NTRS)

1980-01-01

Measurements in an Auger spectrometer of surface impurity concentrations on liquid gallium showed that the principle impurities were oxygen and carbon. The impurities showed a tendency to collect into plates or clumps. In Pb rich Pb-Sn off eutectic alloys, macrosegration caused by solutal convection was not reduced by vertical or horizontal fields of 0.1 T, but downward solidification virtually eliminated macrosegration in small diameter samples. Phase assemblages of selected compositions on the joints K(Fe0.5 Si-0.5) O2 -SiO2 and KFeO2 - SiO2 were determined over a large range of oxygen partial pressures and the temperature range 800 C to 1400 C.

Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

NASA Astrophysics Data System (ADS)

Usikov, Alexander; Soukhoveev, Vitali; Kovalenkov, Oleg; Syrkin, Alexander; Shapovalov, Liza; Volkova, Anna; Ivantsov, Vladimir

2013-08-01

We report on accumulation of background Si and O impurities measured by secondary ion mass spectrometry (SIMS) at the sub-interfaces in undoped, Zn- and Mg-doped multi-layer GaN structures grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates with growth interruptions. The impurities accumulation is attributed to reaction of ammonia with the rector quartz ware during the growth interruptions. Because of this effect, HVPE-grown GaN layers had excessive Si and O concentration on the surface that may hamper forming of ohmic contacts especially in the case of p-type layers and may complicate homo-epitaxial growth of a device structure.

An Experimental Design Approach for Impurity Profiling of Valacyclovir-Related Products by RP-HPLC

PubMed Central

Katakam, Prakash; Dey, Baishakhi; Hwisa, Nagiat T; Assaleh, Fathi H; Chandu, Babu R; Singla, Rajeev K; Mitra, Analava

2014-01-01

Abstract Impurity profiling has become an important phase of pharmaceutical research where both spectroscopic and chromatographic methods find applications. The analytical methodology needs to be very sensitive, specific, and precise which will separate and determine the impurity of interest at the 0.1% level. Current research reports a validated RP-HPLC method to detect and separate valacyclovir-related impurities (Imp-E and Imp-G) using the Box-Behnken design approach of response surface methodology. A gradient mobile phase (buffer: acetonitrile as mobile phase A and acetonitrile: methanol as mobile phase B) was used. Linearity was found in the concentration range of 50–150 μg/mL. The mean recovery of impurities was 99.9% and 103.2%, respectively. The %RSD for the peak areas of Imp-E and Imp-G were 0.9 and 0.1, respectively. No blank interferences at the retention times of the impurities suggest the specificity of the method. The LOD values were 0.0024 μg/mL for Imp-E and 0.04 μg/mL for Imp-G and the LOQ values were obtained as 0.0082 μg/mL and 0.136 μg/mL, respectively, for the impurities. The S/N ratios in both cases were within the specification limits. Proper peak shapes and satisfactory resolution with good retention times suggested the suitability of the method for impurity profiling of valacyclovir-related drug substances. PMID:25853072

Paramagnetic Attraction of Impurity-Helium Solids

NASA Technical Reports Server (NTRS)

Bernard, E. P.; Boltnev, R. E.; Khmelenko, V. V.; Lee, D. M.

2003-01-01

Impurity-helium solids are formed when a mixture of impurity and helium gases enters a volume of superfluid helium. Typical choices of impurity gas are hydrogen deuteride, deuterium, nitrogen, neon and argon, or a mixture of these. These solids consist of individual impurity atoms and molecules as well as clusters of impurity atoms and molecules covered with layers of solidified helium. The clusters have an imperfect crystalline structure and diameters ranging up to 90 angstroms, depending somewhat on the choice of impurity. Immediately following formation the clusters aggregate into loosely connected porous solids that are submerged in and completely permeated by the liquid helium. Im-He solids are extremely effective at stabilizing high concentrations of free radicals, which can be introduced by applying a high power RF dis- charge to the impurity gas mixture just before it strikes the super fluid helium. Average concentrations of 10(exp 19) nitrogen atoms/cc and 5 x 10(exp 18) deuterium atoms/cc can be achieved this way. It shows a typical sample formed from a mixture of atomic and molecular hydrogen and deuterium. It shows typical sample formed from atomic and molecular nitrogen. Much of the stability of Im-He solids is attributed to their very large surface area to volume ratio and their permeation by super fluid helium. Heat resulting from a chance meeting and recombination of free radicals is quickly dissipated by the super fluid helium instead of thermally promoting the diffusion of other nearby free radicals.

Deposition temperature dependence of material and Si surface passivation properties of O{sub 3}-based atomic layer deposited Al{sub 2}O{sub 3}-based films and stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bordihn, Stefan, E-mail: s.bordihn2@q-cells.com; Mertens, Verena; Müller, Jörg W.

2014-01-15

The material composition and the Si surface passivation of aluminum oxide (Al{sub 2}O{sub 3}) films prepared by atomic layer deposition using Al(CH{sub 3}){sub 3} and O{sub 3} as precursors were investigated for deposition temperatures (T{sub Dep}) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H] < 0.5 at. % at 400 °C and 500 °C. The surface passivation performance was investigated after annealing at 300 °C–450 °C and also after firing stepsmore » in the typical temperature range of 800 °C–925 °C. A similar high level of the surface passivation performance, i.e., surface recombination velocity values <10 cm/s, was obtained after annealing and firing. Investigations of Al{sub 2}O{sub 3}/SiN{sub x} stacks complemented the work and revealed similar levels of surface passivation as single-layer Al{sub 2}O{sub 3} films, both for the chemical and field-effect passivation. The fixed charge density in the Al{sub 2}O{sub 3}/SiN{sub x} stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10{sup 12} cm{sup −2} to 3·10{sup 11} cm{sup −2} when T{sub Dep} was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T{sub Dep}. When firing films prepared at of low T{sub Dep}, blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al{sub 2}O{sub 3}-based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen.« less

An alternate to chromate conversion coatings for the corrosion protection of aluminum 2024-T3

NASA Astrophysics Data System (ADS)

Guo, Ruiguang

Corrosion of high-strength aluminum alloys used for airspace application is an expensive and serious problem. The most significant environmental factor contributing to the corrosion of these alloys is water condensed from humid air and contaminated with soluble chloride salts. The Al 2024 series used for aircraft are particularly susceptible to corrosion in aqueous chloride solutions due to alloying constituents such as copper and other impurities. Chromates are efficient inhibitors of corrosion of aluminum in near neutral aqueous environments containing aggressive anions such as chlorides. Usually, aluminum alloys are initially protected by chromate conversion coatings. Additional polymer coatings are sometimes added during exposure to corrosive atmospheres such as marine environments. Although chromate coatings are widely used, they require the use of noxious solutions, so they have always presented effluent disposal problems. There are health and safety concerns over the use of chromates due to their toxicity and carcinogenic nature and, as a consequence, the environmental and health risks associated with the use of such coatings will be restricted in the future. It was these health and safety concerns that led to the development of alternative non-toxic coating processes with comparable adhesion properties and corrosion protection. A variety of process technologies are under development and are vying for acceptance in industrial markets. As an alternate conversion coating, a new titanate conversion coating was systematically researched and developed. Research concentrated on producing passive surfaces from a simple titanate solution using an immersion process. The corrosion resistance of the treated surface has been evaluated using simple, rapid electrochemical techniques as well as a more long-term salt spray test. Passivation by titanate conversion treatment exhibits many similarities to chromate conversion treatment. Based on this study of corrosion protection of the titanate coating formed at different conditions, a possible formation mechanism of a titanate coating is proposed. A conclusion may be drawn that titanate coating seems to be a viable alternative to chromate coatings.

Development of a passive sampler for gaseous mercury

NASA Astrophysics Data System (ADS)

Gustin, M. S.; Lyman, S. N.; Kilner, P.; Prestbo, E.

2011-10-01

Here we describe work toward development of the components of a cost effective passive sampling system for gaseous Hg that could be broadly deployed by nontechnical staff. The passive sampling system included an external shield to reduce turbulence and exposure to precipitation and dust, a diffusive housing that directly protects the collection surface during deployment and handling, and a collection surface. A protocol for cleaning and deploying the sampler and an analytical method were developed. Our final design consisted of a polycarbonate external shield enclosing a custom diffusive housing made from expanded PTFE tubing. Two collection surfaces were investigated, gold sputter-coated quartz plates and silver wires. Research showed the former would require extensive quality control for use, while the latter had interferences with other atmosphere constituents. Although the gold surface exhibited the best performance over space and time, gradual passivation would limit reuse. For both surfaces lack of contamination during shipping, deployment and storage indicated that the handling protocols developed worked well with nontechnical staff. We suggest that the basis for this passive sampling system is sound, but further exploration and development of a reliable collection surface is needed.

Effect of the Ti/Si ratio of spin coating solutions on surface passivation of crystalline silicon by TiO x -SiO x composite films

NASA Astrophysics Data System (ADS)

Yoshiba, Shuhei; Tanitsu, Katsuya; Suda, Yoshiyuki; Kamisako, Koichi

2017-06-01

Passivation films or antireflection coatings are generally prepared using costly vacuum or high-temperature processes. Thus, we report the preparation of TiO x -SiO x composite films by novel spin coatable solutions for the synthesis of low-cost passivation coating materials. The desired films were formed by varying the mixing ratios of TiO x and SiO x , and the resulting films exhibited excellent surface passivation properties. For the p-type wafer, an optimal effective surface recombination velocity (S eff) of 93 cm/s was achieved at \\text{TiO}x:\\text{SiO}x = 6:4, while a surface recombination current density (J 0s) of 195 fA/cm2 was obtained. In contrast, for the n-type wafer, an S eff of 27 cm/s and a J 0s of 38 fA/cm2 were achieved at \\text{TiO}x:\\text{SiO}x = 8:2. This excellent surface passivation effect could be attributed to the low interface state density and high positive fixed charge density. Furthermore, the thickness of the interfacial SiO x layer was determined to be important for obtaining the desired surface passivation effect.

Effect of Molecule–Surface Reaction Mechanism on the Electronic Characteristics and Photovoltaic Performance of Molecularly Modified Si

PubMed Central

2013-01-01

We report on the passivation properties of molecularly modified, oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated Si(111) surface can follow two possible paths, nucleophilic substitution (SN) and radical chain reaction (RCR), depending on adsorption conditions. Moderate heating leads to the SN reaction, whereas with UV irradiation RCR dominates, with SN as a secondary path. We show that the site-sensitive SN reaction leads to better electrical passivation, as indicated by smaller surface band bending and a longer lifetime of minority carriers. However, the surface-insensitive RCR reaction leads to more dense monolayers and, therefore, to much better chemical stability, with lasting protection of the Si surface against oxidation. Thus, our study reveals an inherent dissonance between electrical and chemical passivation. Alkoxy monolayers, formed under UV irradiation, benefit, though, from both chemical and electronic passivation because under these conditions both SN and RCR occur. This is reflected in longer minority carrier lifetimes, lower reverse currents in the dark, and improved photovoltaic performance, over what is obtained if only one of the mechanisms operates. These results show how chemical kinetics and reaction paths impact electronic properties at the device level. It further suggests an approach for effective passivation of other semiconductors. PMID:24205409

Absolute Wavelength Calibration of the IDSII Spectrometer for Impurity Ion Velocity Measurements in the MST

NASA Astrophysics Data System (ADS)

Baltzer, M.; Craig, D.; den Hartog, D. J.; Nornberg, M. D.; MST Team

2014-10-01

The MST operates two Ion Doppler Spectrometers (IDS) for high time-resolution passive and active measurements of impurity ion emission. Absolutely calibrated measurements of flow are difficult because the spectrometers record data within 0.3 nm of the line of interest, and commercial calibration lamps do not produce lines in this narrow range . Four calibration methods were investigated. First, emission along the chord bisecting the poloidal plane was measured as it should have no time-averaged Doppler shift. Second, a calibrated CCD spectrometer and the IDSII were used to observe the same plasma from opposing sides so as to measure opposite Doppler shifts. The unshifted line is located halfway between the two opposing measurements. Third, the two fibers of the IDSI were positioned to take absolute flow measurements using opposing views. Substituting the IDSII for one of the IDSI fibers, absolute measurements of flow from the IDSI were used to calibrate the IDSII. Finally, an optical system was designed to filter an ultraviolet LED, providing a known wavelength source within the spectral range covered by the IDSII. The optical train is composed of an air-gapped etalon and fused silica lenses. The quality of calibration for each of these methods is analyzed and their results compared. Preliminary impurity ion velocity measurements are shown. This work has been supported by the US DOE and the NSF.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All othermore » ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.« less

Analysis of Etched CdZnTe Substrates

NASA Astrophysics Data System (ADS)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

Water Adsorption on Clean and Defective Anatase TiO2 (001) Nanotube Surfaces: A Surface Science Approach.

PubMed

Kenmoe, Stephane; Lisovski, Oleg; Piskunov, Sergei; Bocharov, Dmitry; Zhukovskii, Yuri F; Spohr, Eckhard

2018-05-31

We use ab initio molecular dynamics simulations to study the adsorption of thin water films with 1 and 2 ML coverage on anatase TiO 2 (001) nanotubes. The nanotubes are modeled as 2D slabs, which consist of partially constrained and partially relaxed structural motifs from nanotubes. The effect of anion doping on the adsorption is investigated by substituting O atoms with N and S impurities on the nanotube slab surface. Due to strain-induced curvature effects, water adsorbs molecularly on defect-free surfaces via weak bonds on Ti sites and H bonds to surface oxygens. While the introduction of an S atom weakens the interaction of the surface with water, which adsorbs molecularly, the presence of an N impurity renders the surface more reactive to water, with a proton transfer from the water film and the formation of an NH group at the N site. At 2 ML coverage, a further surface-assisted proton transfer takes place in the water film, resulting in the formation of an OH - group and an NH 2 + cationic site on the surface.

Mesure du coewicient d'absorption optique dans le silicium multicristallin de type P pour photopiles solaires

NASA Astrophysics Data System (ADS)

Gervais, J.

1993-07-01

The minority carrier diffusion length L characterizes the electrical quality of multicrystalline silicon wafers used for photovoltaics. Its determination before and after different treatments (impurity diffusion, passivation, metallisation) is needfull and requires the accurate knowledge of the optical absorption coefficient α in the near infrared. We have determinated the spectral variation of α in the range between 0.86 and 1.06 μm and we propose an analytic expression which is very close to those proposed for solar grade single crystals. In addition we have verified that the values of α are not affected by long phosphorus diffusion needed to getter metallic impurities. La longueur de diffusion des porteurs minoritaires L caractérise la qualité du silicium multicristallin utilisé pour la conversion photovoltaïque. Sa détermination avant et après les divers traitements (diffusion d'impuretés, passivation des défauts, métallisation) est indispensable et nécessite la connaissance précise du coefficient d'absorption optique α dans le proche infrarouge. Nous avons déterminé expérimentalement la variation spectrale de α entre 0,86 et 1,06 μm et nous proposons un développement qui est très proche de ceux trouvés dans des monocristaux de silicium de qualité solaire. La variation de α n'est pas influencée par des diffusions de phosphore prolongées nécessaires à l'extraction et au piégeage d'impuretés métalliques.

2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells.

PubMed

Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Durcan, Chris; Yu, Bin

2013-11-21

A two-dimensional layered insulator, hexagonal boron nitride (h-BN), is demonstrated as a new class of surface passivation materials in dye-sensitized solar cells (DSSCs) to reduce interfacial carrier recombination. We observe ~57% enhancement in the photo-conversion efficiency of the DSSC utilizing h-BN coated semiconductor TiO2 as compared with the device without surface passivation. The h-BN coated TiO2 is characterized by Raman spectroscopy to confirm the presence of highly crystalline, mixed monolayer/few-layer h-BN nanoflakes on the surface of TiO2. The passivation helps to minimize electron-hole recombination at the TiO2/dye/electrolyte interfaces. The DSSC with h-BN passivation exhibits significantly lower dark saturation current in the low forward bias region and higher saturation in the high forward bias region, respectively, suggesting that the interface quality is largely improved without impeding carrier transport at the material interface. The experimental results reveal that the emerging 2D layered insulator could be used for effective surface passivation in solar cell applications attributed to desirable material features such as high crystallinity and self-terminated/dangling-bond-free atomic planes as compared with high-k thin-film dielectrics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

2015-09-08

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Surface passivation for CdTe devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.

PubMed

Yang, Zai-Xing; Yin, Yanxue; Sun, Jiamin; Bian, Luozhen; Han, Ning; Zhou, Ziyao; Shu, Lei; Wang, Fengyun; Chen, Yunfa; Song, Aimin; Ho, Johnny C

2018-05-02

Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, Ke; De Andrade, Vincent; Feng, Zhange

The presence of impurity ions is known to significantly influence mineral surface morphology during crystal growth from aqueous solution, but knowledge on impurity ion-mineral interactions during dissolution under far-from equilibrium conditions remains limited. Here we show that calcite (CaCO 3) exhibits a rich array of dissolution features in the presence of Pb. During the initial stage, calcite exhibits non-classical surface features characterized as micro pyramids developed spontaneously in acidic Pb-bearing solutions. Subsequent pseudomorphic growth of cerussite (PbCO 3) was observed, where nucleation occurred entirely within a pore space created by dissolution at the calcite/substrate interface. Uneven growth rates yielded amore » cerussite shell made of lath- or dendritic-shaped crystals. The cerussite phase was separated from the calcite by pores of less than 200 nm under transmission X-ray microscopy, consistent with the interface-coupled dissolution-precipitation mechanism. These results show that impurity metal ions exert significant control over the microscale dissolution features found on mineral surfaces and provide new insights into interpreting and designing micro structures observed in naturally-occurring and synthetic carbonate minerals by dissolution. In addition, heterogeneous micro-environments created in transport limited reactions under pore spaces may lead to unusual growth forms during crystal nucleation and precipitation.« less

Ground Based Program for the Physical Analysis of Macromolecular Crystal Growth

NASA Technical Reports Server (NTRS)

Malkin, Alexander J.

1998-01-01

During the past year we have focused on application of in situ Atomic Force Microscopy (AFM) for studies of the growth mechanisms and kinetics of crystallization for different macromolecular systems. Mechanisms of macrostep formation and their decay, which are important in understanding of defect formation, were studied on the surfaces of thaumatin, catalase, canavalin and lysozyme crystals. Experiments revealed that step bunching on crystalline surfaces occurred either due to two- or three-dimensional nucleation on the terraces of vicinal slopes or as a result of uneven step generation by complex dislocation sources. No step bunching arising from interaction of individual steps in the course of the experiment was observed. The molecular structure of the growth steps for thaumatin and lipase crystals were deduced. It was further shown that growth step advance occurs by incorporation of single protein molecules. In singular directions growth steps move by one-dimensional nucleation on step edges followed by lateral growth. One-dimensional nuclei have different sizes, less then a single unit cell, varying for different directions of step movement. There is no roughness due to thermal fluctuations, and each protein molecule which incorporated into the step remained. Growth kinetics for catalase crystals was investigated over wide supersaturation ranges. Strong directional kinetic anisotropy in the tangential step growth rates in different directions was seen. The influence of impurities on growth kinetics and cessation of macromolecular crystals was studied. Thus, for catalase, in addition to pronounced impurity effects on the kinetics of crystallization, we were also able to directly observe adsorption of some impurities. At low supersaturation we repeatedly observed filaments which formed from impurity molecules sedimenting on the surfaces. Similar filaments were observed on the surfaces of thaumatin, canavalin and STMV crystals as well, but the frequency was low compared with catalase crystallization. Cessation of growth of xylanase and lysozyme crystals was also observed and appeared to be a consequence of the formation of dense impurity adsorption layers. Attachment: "An in situ AFM investigation of catalase crystallization", "Atomic force microscopy studies of living cells: visualization of motility, division, aggregation, transformation, and apoptosis", AFM studies on mechanisms of nucleation and growth of macromolecular crystals", and "In situ atomic force microscopy studies of surface morphology, growth kinetics, defect structure and dissolution in macromolecular crystallization".

Solutal Convection Around Growing Protein Crystal and Diffusional Purification in Space

NASA Technical Reports Server (NTRS)

Lee, Chun P.; Chernov, Alexander A.

2004-01-01

At least some protein crystals were found to preferentially trap microheterogeneous impurities. The latter are, for example, dimmer molecules of the crystallizing proteines (e.g. ferritin, lysozyme), or the regular molecules on which surfaces small molecules or ions are adsorbed (e.g. acetilated lysozyme) and modi@ molecular charge. Impurities may induce lattice defects and deteriorate structural resolution. Distribution of impurities between mother solution and gorwing crystal is defined by two interrelated distribution coefficients: kappa = rho(sup c, sub 2) and K = (rho(sup c, sub 2)/rho(sup c, sub 1)/rho(sub 2)/rho(sub 1). Here, rho(sub 2), rho(sub 1) and rho(sup c, sub 2) are densities of impurity (2) and regular protein (1) in solution at the growing interface and within the crystal ("c"). For the microheterogeneous impurities studied, K approx. = 2 - 4, so that kappa approx. - 10(exp 2) - 10(exp 3), since K = kappa (rho(sub 1)/rho(sup c, sub 1) and protein solubility ratio rho(sub 1)/rho(sub=p c, sub 2) much less than 1. Therefore, a crystal growing in absence of convection purifies mother solution around itself, grows cleaner and, probably, more perfect. If convection is present, the solution flow permanently brings new impurities to the crystal. This work theoretically addressed two subjects: 1) onset of convection, 2) distribution of impurities.

Impurity effect of iron(III) on the growth of potassium sulfate crystal in aqueous solution

NASA Astrophysics Data System (ADS)

Kubota, Noriaki; Katagiri, Ken-ichi; Yokota, Masaaki; Sato, Akira; Yashiro, Hitoshi; Itai, Kazuyoshi

1999-01-01

Growth rates of the {1 1 0} faces of a potassium sulfate crystal were measured in a flow cell in the presence of traces of impurity Fe(III) (up to 2 ppm) over the range of pH=2.5-6.0. The growth rate was significantly suppressed by the impurity. The effect became stronger as the impurity concentration was increased and at pH<5. It became weaker with increasing supersaturation. It also became weaker as the pH was increased and at pH>5 it finally disappeared completely. The concentration and supersaturation effects on the impurity action were reasonably explained with a model proposed by Kubota and Mullin [J. Crystal Growth, 152 (1995) 203]. The surface coverage of the active sites by Fe(III) is estimated to increase linearly on increasing its concentration in solution in the range examined by growth experiments. The impurity effectiveness factor is confirmed to increase inversely proportional to the supersaturation as predicted by the model. Apart from the discussion based on the model, the pH effect on the impurity action is qualitatively explained by assuming that the first hydrolysis product of aqua Fe(III) complex compound, [Fe(H 2O) 5(OH)] 2+, is both growth suppression and adsorption active, but the second hydrolysis product, [Fe(H 2O) 4(OH) 2] +, is only adsorption active.

Investigation of problems of closing of geophysical cracks in thermoelastic media in the case of flow of fluids with impurities

NASA Astrophysics Data System (ADS)

Martirosyan, A. N.; Davtyan, A. V.; Dinunts, A. S.; Martirosyan, H. A.

2018-04-01

The purpose of this article is to investigate a problem of closing cracks by building up a layer of sediments on surfaces of a crack in an infinite thermoelastic medium in the presence of a flow of fluids with impurities. The statement of the problem of closing geophysical cracks in the presence of a fluid flow is presented with regard to the thermoelastic stress and the influence of the impurity deposition in the liquid on the crack surfaces due to thermal diffusion at the fracture closure. The Wiener–Hopf method yields an analytical solution in the special case without friction. Numerical calculations are performed in this case and the dependence of the crack closure time on the coordinate is plotted. A similar spatial problem is also solved. These results generalize the results of previous studies of geophysical cracks and debris in rocks, where the closure of a crack due to temperature effects is studied without taking the elastic stresses into account.

Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10 1 bar 0) GaN homoepitaxial layers

NASA Astrophysics Data System (ADS)

Barry, Ousmane I.; Tanaka, Atsushi; Nagamatsu, Kentaro; Bae, Si-Young; Lekhal, Kaddour; Matsushita, Junya; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

2017-06-01

We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m-plane (10 1 bar 0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m-plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m-GaN samples were characterized. Low leakage current densities of the order of 10-10 A/cm2 at -5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

Noise suppression in surface microseismic data by τ-p transform

USGS Publications Warehouse

Forghani-Arani, Farnoush; Batzle, Mike; Behura, Jyoti; Willis, Mark; Haines, Seth; Davidson, Michael

2013-01-01

Surface passive seismic methods are receiving increased attention for monitoring changes in reservoirs during the production of unconventional oil and gas. However, in passive seismic data the strong cultural and ambient noise (mainly surface-waves) decreases the effectiveness of these techniques. Hence, suppression of surface-waves is a critical step in surface microseismic monitoring. We apply a noise suppression technique, based on the τ — p transform, to a surface passive seismic dataset recorded over a Barnett Shale reservoir undergoing a hydraulic fracturing process. This technique not only improves the signal-to-noise ratios of added synthetic microseismic events, but it also preserves the event waveforms.

Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

PubMed

Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

2017-01-11

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

Proof-of-concept experiment for on-line laser induced breakdown spectroscopy analysis of impurity layer deposited on optical window and other plasma facing components of Aditya tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, Gulab Singh; Kumar, Rohit; Rai, Awadhesh Kumar, E-mail: awadheshkrai@rediffmail.com

2015-12-15

In the present manuscript, we demonstrate the design of an experimental setup for on-line laser induced breakdown spectroscopy (LIBS) analysis of impurity layers deposited on specimens of interest for fusion technology, namely, plasma-facing components (PFCs) of a tokamak. For investigation of impurities deposited on PFCs, LIBS spectra of a tokamak wall material like a stainless steel sample (SS304) have been recorded through contaminated and cleaned optical windows. To address the problem of identification of dust and gases present inside the tokamak, we have shown the capability of the apparatus to record LIBS spectra of gases. A new approach known asmore » “back collection method” to record LIBS spectra of impurities deposited on the inner surface of optical window is presented.« less

The Effects of Acid Passivation, Tricresyl Phosphate Pre-Soak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

NASA Technical Reports Server (NTRS)

Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar

1997-01-01

The boundary-lubrication performance of perfluoropolyether (PFPE) thin films in the presence of passivated 440 C stainless steel is presented. The study utilized a standard ball-on-disc tribometer. Stainless steel surfaces were passivated with one of four techniques: 1) submersion in a chromic acid bath for 30 minutes at 46 C, 2) submersion in a chromic acid bath for 60 minutes at 56 C, 3) submersion in a tricresyl phosphate (TCP) bath for 2 days at 107 C, or 4) UV/Ozone treated for 15 minutes. After passivation, each disc had a 400 A film of PFPE (hexafluoropropene oxide) applied to it reproducibly (+/- 20%) and uniformly (+/- 15%) using a film deposition device. The lifetimes of these films were quantified by measuring the number of sliding wear cycles required to induce an increase in the friction coefficient from an initial value characteristic of the lubricated wear couple to a final, or failure value, characteristic of an unlubricated, unpassivated wear couple. The lubricated lifetime of the 440 C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray Photoelectron Spectroscopy (XPS). It was found that chromic acid passivation altered the Cr to Fe ratio of the surface. TCP passivation resulted in a FePO4 layer on the surface, while UV/Ozone passivation only removed the carbonaceous contamination layer. None of the passivation techniques were found to dramatically increase the oxide film thickness.

Unsteady-state transfer of impurities during crystal growth of sucrose in sugarcane solutions

NASA Astrophysics Data System (ADS)

Martins, P. M.; Ferreira, A.; Polanco, S.; Rocha, F.; Damas, A. M.; Rein, P.

2009-07-01

In this work, we present growth rate data of sucrose crystals in the presence of impurities that can be used by both sugar technologists and crystal growth scientists. Growth rate curves measured in a pilot-scale evaporative crystallizer suggest a period of slow growth that follows the seeding of crystals into supersaturated technical solutions. The observed trend was enhanced by adding typical sugarcane impurities such as starch, fructose or dextran to the industrial syrups. Maximum growth rates of sucrose resulted at intermediate rather than high supersaturation levels in the presence of the additives. The effects of the additives on the sucrose solubility and sucrose mass transfer in solution were taken into account to explain the observed crystal growth kinetics. A novel mechanism was identified of unsteady-state adsorption of impurities at the crystal surface and their gradual replacement by the crystallizing solute towards the equilibrium occupation of the active sites for growth. Specifically designed crystallization experiments at controlled supersaturation confirmed this mechanism by showing increasing crystal growth rates with time until reaching a steady-state value for a given supersaturation level and impurity content.

Ion beam microtexturing of surfaces

NASA Technical Reports Server (NTRS)

Robinson, R. S.

1981-01-01

Some recent work in surface microtecturing by ion beam sputtering is described. The texturing is accomplished by deposition of an impurity onto a substrate while simultaneously bombarding it with an ion beam. A summary of the theory regarding surface diffusion of impurities and the initiation of cone formation is provided. A detailed experimental study of the time-development of individual sputter cones is described. A quasi-liquid coating was observed that apparently reduces the sputter rate of the body of a cone compared to the bulk material. Experimental measurements of surface diffusion activation energies are presented for a variety of substrate-seed combinations and range from about 0.3 eV to 1.2 eV. Observations of apparent crystal structure in sputter cones are discussed. Measurements of the critical temperature for cone formation are also given along with a correlation of critical temperature with substrate sputter rate.

Morphology variation, composition alteration and microstructure changes in ion-irradiated 1060 aluminum alloy

NASA Astrophysics Data System (ADS)

Wan, Hao; Si, Naichao; Wang, Quan; Zhao, Zhenjiang

2018-02-01

Morphology variation, composition alteration and microstructure changes in 1060 aluminum irradiated with 50 keV helium ions were characterized by field emission scanning electron microscopy (FESEM) equipped with x-ray elemental scanning, 3D measuring laser microscope and transmission electron microscope (TEM). The results show that, helium ions irradiation induced surface damage and Si-rich aggregates in the surfaces of irradiated samples. Increasing the dose of irradiation, more damages and Si-rich aggregates would be produced. Besides, defects such as dislocations, dislocation loops and dislocation walls were the primary defects in the ion implanted layer. The forming of surface damages were related with preferentially sputtering of Al component. While irradiation-enhanced diffusion and irradiation-induced segregation resulted in the aggregation of impurity atoms. And the aggregation ability of impurity atoms were discussed based on the atomic radius, displacement energy, lattice binding energy and surface binding energy.

Recent increase in snow-melt area in the Greenland Ice sheet as an indicator of the effect of reduced surface albedo by snow impurities

NASA Astrophysics Data System (ADS)

Rikiishi, K.

2008-12-01

Recent rapid decline of cryosphere including mountain glaciers, sea ice, and seasonal snow cover tends to be associated with global warming. However, positive feedback is likely to operate between the cryosphere and air temperature, and then it may not be so simple to decide the cause-and-effect relation between them. The theory of heat budget for snow surface tells us that sensible heat transfer from the air to the snow by atmospheric warming by 1°C is about 10 W/m2, which is comparable with heat supply introduced by reduction of the snow surface albedo by only 0.02. Since snow impurities such as black carbon and soil- origin dusts have been accumulated every year on the snow surface in snow-melting season, it is very important to examine whether the snow-melting on the ice sheets, mountain glaciers, and sea ice is caused by global warming or by accumulated snow impurities originated from atmospheric pollutants. In this paper we analyze the dataset of snow-melt area in the Greenland ice sheet for the years 1979 - 2007 (available from the National Snow and Ice Data Center), which is reduced empirically from the satellite micro-wave observations by SMMR and SMM/I. It has been found that, seasonally, the snow-melt area extends most significantly from the second half of June to the first half of July when the sun is highest and sunshine duration is longest, while it doesn't extend any more from the second half of July to the first half of August when the air temperature is highest. This fact may imply that sensible heat required for snow-melting comes from the solar radiation rather than from the atmosphere. As for the interannual variation of snow-melt area, on the other hand, we have found that the growth rate of snow-melt area gradually increases from July, to August, and to the first half of September as the impurities come out to and accumulated at the snow surface. However, the growth rate is almost zero in June and the second half of September when fresh snow of high albedo covers the surface. This fact may imply that the combined operation of solar radiation and snow impurities is responsible for the recent global decline of cryosphere. Discussion about other research works will be given in the presentation in order to support the above idea.

Measurements of impurity concentrations and transport in the Lithium Tokamak Experiment

NASA Astrophysics Data System (ADS)

Boyle, Dennis Patrick

This thesis presents new measurements of core impurity concentrations and transport in plasmas with lithium coatings on all-metal plasma facing components (PFCs) in the Lithium Tokamak Experiment (LTX). LTX is a modest-sized spherical tokamak uniquely capable of operating with large area solid and/or liquid lithium coatings essentially surrounding the entire plasma (as opposed to just the divertor or limiter region in other devices). Lithium (Li) wall-coatings have improved plasma performance and confinement in several tokamaks with carbon (C) PFCs, including the National Spherical Torus Experiment (NSTX). In NSTX, contamination of the core plasma with Li impurities was very low (<0.1%) despite extensive divertor coatings. Low Li levels in NSTX were found to be largely due to neoclassical forces from the high level of C impurities. Studying impurity levels and transport with Li coatings on stainless steel surfaces in LTX is relevant to future devices (including future enhancements to NSTX-Upgrade) with all-metal PFCs. The new measurements in this thesis were enabled by a refurbished Thomson scattering system and improved impurity spectroscopy, primarily using a novel visible spectrometer monitoring several Li, C, and oxygen (O) emission lines. A simple model was used to account for impurities in unmeasured charge states, assuming constant density in the plasma core and constant concentration in the edge. In discharges with solid Li coatings, volume averaged impurity concentrations were low but non-negligible, with 2-4% Li, 0.6-2% C, 0.4-0.7% O, and Z eff<1.2. Transport was assessed using the TRANSP, NCLASS, and MIST codes. Collisions with the main H ions dominated the neoclassical impurity transport, unlike in NSTX, where collisions with C dominated. Furthermore, neoclassical transport coefficients calculated with NCLASS were similar across all impurity species and differed no more than a factor of two, in contrast to NSTX where they differed by an order of magnitude. However, time-independent simulations with MIST indicated that unlike NSTX, neoclassical theory did not fully capture the impurity transport and anomalous transport likely played a significant role in determining impurity profiles.

Measurements of impurity concentrations and transport in the Lithium Tokamak Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, Dennis Patrick

This thesis presents new measurements of core impurity concentrations and transport in plasmas with lithium coatings on all-metal plasma facing components (PFCs) in the Lithium Tokamak Experiment (LTX). LTX is a modest-sized spherical tokamak uniquely capable of operating with large area solid and/or liquid lithium coatings essentially surrounding the entire plasma (as opposed to just the divertor or limiter region in other devices). Lithium (Li) wall-coatings have improved plasma performance and confinement in several tokamaks with carbon (C) PFCs, including the National Spherical Torus Experiment (NSTX). In NSTX, contamination of the core plasma with Li impurities was very low (<0.1%)more » despite extensive divertor coatings. Low Li levels in NSTX were found to be largely due to neoclassical forces from the high level of C impurities. Studying impurity levels and transport with Li coatings on stainless steel surfaces in LTX is relevant to future devices (including future enhancements to NSTX-Upgrade) with all-metal PFCs. The new measurements in this thesis were enabled by a refurbished Thomson scattering system and improved impurity spectroscopy, primarily using a novel visible spectrometer monitoring several Li, C, and oxygen (O) emission lines. A simple model was used to account for impurities in unmeasured charge states, assuming constant density in the plasma core and constant concentration in the edge. In discharges with solid Li coatings, volume averaged impurity concentrations were low but non-negligible, with~2-4% Li, ~0.6-2% C, ~0.4-0.7% O, and Z_eff<1.2. Transport was assessed using the TRANSP, NCLASS, and MIST codes. Collisions with the main H ions dominated the neoclassical impurity transport, unlike in NSTX, where collisions with C dominated. Furthermore, neoclassical transport coefficients calculated with NCLASS were similar across all impurity species and differed no more than a factor of two, in contrast to NSTX where they differed by an order of magnitude. However, time-independent simulations with MIST indicated that unlike NSTX, neoclassical theory did not fully capture the impurity transport and anomalous transport likely played a significant role in determining impurity profiles.« less

Argon metastable dynamics and lifetimes in a direct current microdischarge

NASA Astrophysics Data System (ADS)

Stefanović, Ilija; Kuschel, Thomas; Schröter, Sandra; Böke, Marc

2014-09-01

In this paper we study the properties of a pulsed dc microdischarge with the continuous flow of argon. Argon metastable lifetimes are measured by tunable diode laser absorption spectroscopy (TDLAS) and are compared with calculated values which yield information about excitation and de-excitation processes. By increasing the gas flow-rate about 5 times from 10 to 50 sccm, the Arm lifetime increases from 1 to 5 μs due to the reduction of metastable quenching with gas impurities. Optical emission spectroscopy reveals nitrogen and water molecules as the main gas impurities. The estimated N2 density [N2] = 0.1% is too low to explain the measured metastable lifetimes. Water impurity was found to be the main de-excitation source of argon metastable atoms due to high quenching coefficients. The water impurity level of [H2O] = 0.15% to 1% is sufficient to bring calculated metastable lifetimes in line with experiments. The maximum value of water content in the discharge compared to the argon atoms is estimated to approximately 6%, due to the large surface to volume ratio of the microdischarge. The current pulse releases the water molecules from the electrode surface and they are either re-adsorbed in the time between 0.4 ms for [H2O] = 1% and 2.6 ms for [H2O] = 0.15% or pumped out of the discharge with the speed equal to the gas flow-rate. Depending on its partial pressure, the water impurity re-adsorption time is of the order of magnitude or less then the argon gas residence time.

Passivated aluminum nanohole arrays for label-free biosensing applications.

PubMed

Canalejas-Tejero, Víctor; Herranz, Sonia; Bellingham, Alyssa; Moreno-Bondi, María Cruz; Barrios, Carlos Angulo

2014-01-22

We report the fabrication and performance of a surface plasmon resonance aluminum nanohole array refractometric biosensor. An aluminum surface passivation treatment based on oxygen plasma is developed in order to circumvent the undesired effects of oxidation and corrosion usually found in aluminum-based biosensors. Immersion tests in deionized water and device simulations are used to evaluate the effectiveness of the passivation process. A label-free bioassay based on biotin analysis through biotin-functionalized dextran-lipase conjugates immobilized on the biosensor-passivated surface in aqueous media is performed as a proof of concept to demonstrate the suitability of these nanostructured aluminum films for biosensing.

Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

NASA Astrophysics Data System (ADS)

Purkait, Tapas Kumar

Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry. Copper(I) catalyzed "click" chemistry also can be explored with azido-terminated Ge NPs which were synthesized by azidation of chloro-terminated Ge NPs. Water soluble PEGylated Ge NPs were synthesized by "click" reaction for biological application. PEGylated Ge NP clusters were prepared using alpha, o-bis alkyno or bis-azido polyethylene glycol (PEG) derivatives by copper catalyzed "click" reaction via inter-particle linking. These nanoparticles were further functionalized by azido beta-cyclodextrin (beta-CD) and azido adamantane via alkyne-azide "click" reactions. Nanoparticle clusters were made from the functionalized Ge NPs by "host-guest" chemistry of beta-CD functionalized Ge NPs either with adamantane functionalized Ge NPs or fullerene, C60.

The surface characterization and passive behavior of Type 316L stainless steel in H2S-containing conditions

NASA Astrophysics Data System (ADS)

Wang, Zhu; Zhang, Lei; Tang, Xian; Zhang, Ziru; Lu, Minxu

2017-11-01

The protectiveness and characterization of passive films formed at various potentials in H2S-containing environments were studied using electrochemical measurements and surface analysis method. The corrosion resistance of 316L in H2S-containing environment decreases with the applied potential. The Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) results indicate that Ni participates in the film formation, which results in the corresponding enrichment in the passive film. The oxidization degree analysis indicates that metallic elements are present in the passive film. Sulfide ions are significantly favored in the passive film at higher potentials, which is responsible for the breakdown of passive film.

Jet outflow and open field line measurements on the C-2U advanced beam-driven field-reversed configuration plasma experiment.

PubMed

Sheftman, D; Gupta, D; Roche, T; Thompson, M C; Giammanco, F; Conti, F; Marsili, P; Moreno, C D

2016-11-01

Knowledge and control of the axial outflow of plasma particles and energy along open-magnetic-field lines are of crucial importance to the stability and longevity of the advanced beam-driven field-reversed configuration plasma. An overview of the diagnostic methods used to perform measurements on the open field line plasma on C-2U is presented, including passive Doppler impurity spectroscopy, microwave interferometry, and triple Langmuir probe measurements. Results of these measurements provide the jet ion temperature and axial velocity, electron density, and high frequency density fluctuations.

Jet outflow and open field line measurements on the C-2U advanced beam-driven field-reversed configuration plasma experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheftman, D., E-mail: dsheftman@trialphaenergy.com; Gupta, D.; Roche, T.

Knowledge and control of the axial outflow of plasma particles and energy along open-magnetic-field lines are of crucial importance to the stability and longevity of the advanced beam-driven field-reversed configuration plasma. An overview of the diagnostic methods used to perform measurements on the open field line plasma on C-2U is presented, including passive Doppler impurity spectroscopy, microwave interferometry, and triple Langmuir probe measurements. Results of these measurements provide the jet ion temperature and axial velocity, electron density, and high frequency density fluctuations.

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

PubMed

Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

2016-12-01

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

Surface Passivation of CdSe Quantum Dots in All Inorganic Amorphous Solid by Forming Cd1-xZnxSe Shell.

PubMed

Xia, Mengling; Liu, Chao; Zhao, Zhiyong; Wang, Jing; Lin, Changgui; Xu, Yinsheng; Heo, Jong; Dai, Shixun; Han, Jianjun; Zhao, Xiujian

2017-02-07

CdSe quantum dots (QDs) doped glasses have been widely investigated for optical filters, LED color converter and other optical emitters. Unlike CdSe QDs in solution, it is difficult to passivate the surface defects of CdSe QDs in glass matrix, which strongly suppress its intrinsic emission. In this study, surface passivation of CdSe quantum dots (QDs) by Cd 1-x Zn x Se shell in silicate glass was reported. An increase in the Se/Cd ratio can lead to the partial passivation of the surface states and appearance of the intrinsic emission of CdSe QDs. Optimizing the heat-treatment condition promotes the incorporation of Zn into CdSe QDs and results in the quenching of the defect emission. Formation of CdSe/Cd 1-x Zn x Se core/graded shell QDs is evidenced by the experimental results of TEM and Raman spectroscopy. Realization of the surface passivation and intrinsic emission of II-VI QDs may facilitate the wide applications of QDs doped all inorganic amorphous materials.

Chemical and physical passivation of type II strained-layer superlattice devices by means of thiolated self-assembled monolayers and polymer encapsulates

NASA Astrophysics Data System (ADS)

Henry, Nathan C.; Knorr, Daniel B.; Williams, Kristen S.; Baril, Neil; Nallon, Eric; Lenhart, Joseph L.; Andzelm, Jan W.; Pellegrino, Joseph; Tidrow, Meimei; Cleveland, Erin; Bandara, Sumith

2015-05-01

The efficacy of solution deposition of thiolated self-assembled monolayers (SAMs) has been explored for the purpose of passivating III-V type II superlattice (T2SL) photodetectors, more specifically a p-type heterojunction device. Sulfur passivation has previously been achieved on T2SL devices. However, degradation over time, temperature sensitivity and inconsistent reproducibility necessitate a physical encapsulate that can chemically bond to the chemical passivant. Thus, this research investigates two passivation methods, surface passivation with a thiol monolayer and passivation with a polymer encapsulant with a view toward future combination of these techniques. Analysis of the physical and chemical condition of the surface prior to deposition assisted in the development of ideal processes for optimized film quality. Successful deposition was facilitated by in situ oxide removal. Various commercially available functional (cysteamine) and non-functional (alkane) thiolated monolayers were investigated. Dark current was reduced by 3 orders of magnitude and achieved negligible surface leakage at low bias levels. The lowest dark current result, 7.69 × 10-6 A/cm2 at 50 mV, was achieved through passivation with cysteamine.

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

PubMed

Zhao, Chao; Ng, Tien Khee; Prabaswara, Aditya; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D; Parbrook, Peter J; Bhattacharya, Pallab; Ooi, Boon S

2015-10-28

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

Field application of passive SBSE for the monitoring of pesticides in surface waters.

PubMed

Assoumani, A; Coquery, M; Liger, L; Mazzella, N; Margoum, C

2015-03-01

Spot sampling lacks representativeness for monitoring organic contaminants in most surface waters. Passive sampling has emerged as a cost-effective complementary sampling technique. We recently developed passive stir bar sorptive extraction (passive SBSE), with Twister from Gerstel, for monitoring moderately hydrophilic to hydrophobic pesticides (2.18 < log K ow < 5.11) in surface water. The aims of the present study were to assess this new passive sampler for the determination of representative average concentrations and to evaluate the contamination levels of two French rivers. Passive SBSE was evaluated for the monitoring of 16 pesticides in two rivers located in a small vineyard watershed during two 1-month field campaigns in spring 2010 and spring 2011. Passive SBSE was applied for periods of 1 or 2 weeks during the field campaigns and compared with spot sampling and weekly average automated sampling. The results showed that passive SBSE could achieve better time-representativeness than spot sampling and lower limits of quantification than automated sampling coupled with analytical SBSE for the pesticides studied. Finally, passive SBSE proved useful for revealing spatial and temporal variations in pesticide contamination of both rivers and the impact of rainfall and runoff on the river water quality.

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinello, M.; Grassellino, A.; Checchin, M.

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. The origin of this effect is attributed to the lowering of the Mattis and Bardeen surface resistance contribution with increasing accelerating field. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper we conduct the first systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surface treatments for niobiummore » resonators. Adding these results together we are able to show for the first time which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. Lastly, these results also provide new insights on the physics behind the change in the field dependence of the Mattis and Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.« less

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

DOE PAGES

Martinello, M.; Grassellino, A.; Checchin, M.; ...

2016-08-09

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. The origin of this effect is attributed to the lowering of the Mattis and Bardeen surface resistance contribution with increasing accelerating field. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper we conduct the first systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surface treatments for niobiummore » resonators. Adding these results together we are able to show for the first time which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. Lastly, these results also provide new insights on the physics behind the change in the field dependence of the Mattis and Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.« less

A Low-Cost Energy-Efficient Cableless Geophone Unit for Passive Surface Wave Surveys.

PubMed

Dai, Kaoshan; Li, Xiaofeng; Lu, Chuan; You, Qingyu; Huang, Zhenhua; Wu, H Felix

2015-09-25

The passive surface wave survey is a practical, non-invasive seismic exploration method that has increasingly been used in geotechnical engineering. However, in situ deployment of traditional wired geophones is labor intensive for a dense sensor array. Alternatively, stand-alone seismometers can be used, but they are bulky, heavy, and expensive because they are usually designed for long-term monitoring. To better facilitate field applications of the passive surface wave survey, a low-cost energy-efficient geophone system was developed in this study. The hardware design is presented in this paper. To validate the system's functionality, both laboratory and field experiments were conducted. The unique feature of this newly-developed cableless geophone system allows for rapid field applications of the passive surface wave survey with dense array measurements.

Water transport mechanism through open capillaries analyzed by direct surface modifications on biological surfaces

NASA Astrophysics Data System (ADS)

Ishii, Daisuke; Horiguchi, Hiroko; Hirai, Yuji; Yabu, Hiroshi; Matsuo, Yasutaka; Ijiro, Kuniharu; Tsujii, Kaoru; Shimozawa, Tateo; Hariyama, Takahiko; Shimomura, Masatsugu

2013-10-01

Some small animals only use water transport mechanisms passively driven by surface energies. However, little is known about passive water transport mechanisms because it is difficult to measure the wettability of microstructures in small areas and determine the chemistry of biological surfaces. Herein, we developed to directly analyse the structural effects of wettability of chemically modified biological surfaces by using a nanoliter volume water droplet and a hi-speed video system. The wharf roach Ligia exotica transports water only by using open capillaries in its legs containing hair- and paddle-like microstructures. The structural effects of legs chemically modified with a self-assembled monolayer were analysed, so that the wharf roach has a smart water transport system passively driven by differences of wettability between the microstructures. We anticipate that this passive water transport mechanism may inspire novel biomimetic fluid manipulations with or without a gravitational field.

Bonding and vibrations of CO molecules adsorbed at transition metal impurity sites on the MgO (001) surface. A density functional model cluster study

NASA Astrophysics Data System (ADS)

Neyman, K. M.; Rösch, N.

1993-11-01

First principles density functional cluster investigations of adsorption at the (001) surface of pure and doped magnesium oxide are carried out to characterize and compare the interaction of CO molecules with main group (Mg 2+) and d metal (Co 2+, Ni 2+, Cu 2+) surface cationic centers of the ionic substrate. The geometry of the adsorption complexes, the binding mechanism and spectroscopic manifestations of the surface species are analyzed. Special attention is payed to vibrational frequencies and intensities. The calculations qualitatively reproduce observed trends in the adsorption-induced frequency shifts for the series of the surface aggregates Mg 5cCO→Ni 5cCO→CO 5cCO and the corresponding change of the infrared intensities of the CO vibrational mode. For the transition metal impurity sites these results are rationalized in terms of a small, but notable Md πCOπ interaction.

Presence of active pharmaceutical ingredients in the continuum of surface and ground water used in drinking water production.

PubMed

Ahkola, Heidi; Tuominen, Sirkku; Karlsson, Sanja; Perkola, Noora; Huttula, Timo; Saraperä, Sami; Artimo, Aki; Korpiharju, Taina; Äystö, Lauri; Fjäder, Päivi; Assmuth, Timo; Rosendahl, Kirsi; Nysten, Taina

2017-12-01

Anthropogenic chemicals in surface water and groundwater cause concern especially when the water is used in drinking water production. Due to their continuous release or spill-over at waste water treatment plants, active pharmaceutical ingredients (APIs) are constantly present in aquatic environment and despite their low concentrations, APIs can still cause effects on the organisms. In the present study, Chemcatcher passive sampling was applied in surface water, surface water intake site, and groundwater observation wells to estimate whether the selected APIs are able to end up in drinking water supply through an artificial groundwater recharge system. The API concentrations measured in conventional wastewater, surface water, and groundwater grab samples were assessed with the results obtained with passive samplers. Out of the 25 APIs studied with passive sampling, four were observed in groundwater and 21 in surface water. This suggests that many anthropogenic APIs released to waste water proceed downstream and can be detectable in groundwater recharge. Chemcatcher passive samplers have previously been used in monitoring several harmful chemicals in surface and wastewaters, but the path of chemicals to groundwater has not been studied. This study provides novel information on the suitability of the Chemcatcher passive samplers for detecting APIs in groundwater wells.

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

PubMed

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

1986-01-01

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

DISTILLATION OF CALCIUM

DOEpatents

Barton, J.

1954-07-27

This invention relates to an improvement in the process for the purification of caicium or magnesium containing an alkali metal as impurity, which comprises distiiling a batch of the mixture in two stages, the first stage distillation being carried out in the presence of an inert gas at an absolute pressure substantially greater than the vapor pressure of calcium or maguesium at the temperature of distillation, but less than the vaper pressure at that temperature of the alkali metal impurity so that only the alkali metal is vaporized and condensed on a condensing surface. A second stage distilso that substantially only the calcium or magnesium distills under its own vapor pressure only and condenses in solid form on a lower condensing surface.

Edge Mechanisms for Power Excursion Control in Burning Plasmas

NASA Astrophysics Data System (ADS)

Hill, M. D.; Stacey, W. M.

2017-10-01

ITER must have active and preferably also passive control mechanisms that will limit inadvertent plasma power excursions which could trigger runaway fusion heating. We are identifying and investigating the potential of ion-orbit loss, impurity seeding, and various divertor ``choking'' phenomena to control or limit sudden increases in plasma density or temperature by reducing energy confinement, increasing radiation loss, etc., with the idea that such mechanisms could be tested on DIII-D and other existing tokamaks. We are assembling an edge-divertor code (GTEDGE-2) with a neutral transport model and a burn dynamics code, for this purpose. One potential control mechanism is the enhanced ion orbit loss from the thermalized ion distribution that would result from heating of the thermalized plasma ion distribution. Another possibility is impurity seeding with ions whose emissivity would increase sharply if the edge temperature increased. Enhanced radiative losses should also reduce the thermal energy flux across the separatrix, perhaps dropping the plasma into the poorer L-mode confinement regime. We will present some initial calculations to quantify these ideas. Work supported by US DOE under DE-FC02-04ER54698.

Molecular dynamics study of solid-liquid heat transfer and passive liquid flow

NASA Astrophysics Data System (ADS)

Yesudasan Daisy, Sumith

High heat flux removal is a challenging problem in boilers, electronics cooling, concentrated photovoltaic and other power conversion devices. Heat transfer by phase change is one of the most efficient mechanisms for removing heat from a solid surface. Futuristic electronic devices are expected to generate more than 1000 W/cm2 of heat. Despite the advancements in microscale and nanoscale manufacturing, the maximum passive heat flux removal has been 300 W/cm2 in pool boiling. Such limitations can be overcome by developing nanoscale thin-film evaporation based devices, which however require a better understanding of surface interactions and liquid vapor phase change process. Evaporation based passive flow is an inspiration from the transpiration process that happens in trees. If we can mimic this process and develop heat removal devices, then we can develop efficient cooling devices. The existing passive flow based cooling devices still needs improvement to meet the future demands. To improve the efficiency and capacity of these devices, we need to explore and quantify the passive flow happening at nanoscales. Experimental techniques have not advanced enough to study these fundamental phenomena at the nanoscale, an alternative method is to perform theoretical study at nanoscales. Molecular dynamics (MD) simulation is a widely accepted powerful tool for studying a range of fundamental and engineering problems. MD simulations can be utilized to study the passive flow mechanism and heat transfer due to it. To study passive flow using MD, apart from the conventional methods available in MD, we need to have methods to simulate the heat transfer between solid and liquid, local pressure, surface tension, density, temperature calculation methods, realistic boundary conditions, etc. Heat transfer between solid and fluids has been a challenging area in MD simulations, and has only been minimally explored (especially for a practical fluid like water). Conventionally, an equilibrium canonical ensemble (NVT) is simulated using thermostat algorithms. For research in heat transfer involving solid liquid interaction, we need to perform non equilibrium MD (NEMD) simulations. In such NEMD simulations, the methods used for simulating heating from a surface is very important and must capture proper physics and thermodynamic properties. Development of MD simulation techniques to simulate solid-liquid heating and the study of fundamental mechanism of passive flow is the main focus of this thesis. An accurate surface-heating algorithm was developed for water which can now allow the study of a whole new set of fundamental heat transfer problems at the nanoscale like surface heating/cooling of droplets, thin-films, etc. The developed algorithm is implemented in the in-house developed C++ MD code. A direct two dimensional local pressure estimation algorithm is also formulated and implemented in the code. With this algorithm, local pressure of argon and platinum interaction is studied. Also, the surface tension of platinum-argon (solid-liquid) was estimated directly from the MD simulations for the first time. Contact angle estimation studies of water on platinum, and argon on platinum were also performed. A thin film of argon is kept above platinum plate and heated in the middle region, leading to the evaporation and pressure reduction thus creating a strong passive flow in the near surface region. This observed passive liquid flow is characterized by estimating the pressure, density, velocity and surface tension using Eulerian mapping method. Using these simulation, we have demonstrated the fundamental nature and origin of surface-driven passive flow. Heat flux removed from the surface is also estimated from the results, which shows a significant improvement can be achieved in thermal management of electronic devices by taking advantage of surface-driven strong passive liquid flow. Further, the local pressure of water on silicon di-oxide surface is estimated using the LAMMPS atomic to continuum (ATC) package towards the goal of simulating the passive flow in water.

Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells.

PubMed

Lee, Yong Hui; Luo, Jingshan; Son, Min-Kyu; Gao, Peng; Cho, Kyung Taek; Seo, Jiyoun; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

2016-05-01

The Al2 O3 passivation layer is beneficial for mesoporous TiO2 -based perovskite solar cells when it is deposited selectively on the compact TiO2 surface. Such a passivation layer suppressing surface recombination can be formed by thermal decomposition of the perovskite layer during post-annealing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Potassium ions in SiO2: electrets for silicon surface passivation

NASA Astrophysics Data System (ADS)

Bonilla, Ruy S.; Wilshaw, Peter R.

2018-01-01

This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm-2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide-silicon interface with SRV  <  7 cm s-1, in 1 Ω cm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.

Phosphorus Doping in Si Nanocrystals/SiO2 msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication

PubMed Central

Lu, Peng; Mu, Weiwei; Xu, Jun; Zhang, Xiaowei; Zhang, Wenping; Li, Wei; Xu, Ling; Chen, Kunji

2016-01-01

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs. PMID:26956425

High Sensitive Methods for Health Monitoring of Compressor Blades and Fatigue Detection

PubMed Central

Witoś, Mirosław

2013-01-01

The diagnostic and research aspects of compressor blade fatigue detection have been elaborated in the paper. The real maintenance and overhaul problems and characteristic of different modes of metal blade fatigue (LCF, HCF, and VHCF) have been presented. The polycrystalline defects and impurities influencing the fatigue, along with their related surface finish techniques, are taken into account. The three experimental methods of structural health assessment are considered. The metal magnetic memory (MMM), experimental modal analysis (EMA) and tip timing (TTM) methods provide information on the damage of diagnosed objects, for example, compressor blades. Early damage symptoms, that is, magnetic and modal properties of material strengthening and weakening phases (change of local dislocation density and grain diameter, increase of structural and magnetic anisotropy), have been described. It has been proven that the shape of resonance characteristic gives abilities to determine if fatigue or a blade crack is concerned. The capabilities of the methods for steel and titanium alloy blades have been illustrated in examples from active and passive experiments. In the conclusion, the MMM, EMA, and TTM have been verified, and the potential for reliable diagnosis of the compressor blades using this method has been confirmed. PMID:24191135

Investigation of passive films formed on the surface of alloy 690 in borate buffer solution

NASA Astrophysics Data System (ADS)

Jinlong, Lv; Tongxiang, Liang; Chen, Wang; Wenli, Guo

2015-10-01

The passive film formed on the surface of the alloy 690 in borate buffer solution was studied by potentiodynamic curves and electrochemical impedance spectroscopy. With the increasing of the passivation potential, the corrosion resistance of the alloy 690 reduced. Moreover, the corrosion resistance of the passive film was the lowest in the vicinity of 0.6 VSCE. These results were supported by XPS and Mott-Schottky analyses. The corrosion resistance of the alloy 690 increased with the increasing of passivated potential in borate buffer solution with chloride ion. The chloride ion decreased corrosion resistance of the alloy 690 according to point defect model.

Modelling the passive microwave signature from land surfaces: a review of recent results and application to the SMOS & SMAP soil moisture retrieval algorithms

USDA-ARS?s Scientific Manuscript database

Two passive microwave missions are currently operating at L-band to monitor surface soil moisture (SM) over continental surfaces. The SMOS sensor, based on an innovative interferometric technology enabling multi-angular signatures of surfaces to be measured, was launched in November 2009....

Impurity migration pattern under RF sheath potential in tokamak and the response of Plasma to RMP

NASA Astrophysics Data System (ADS)

Xiao, Xiaotao; Gui, Bin; Xia, Tianyang; Xu, Xueqiao; Sun, Youwen

2017-10-01

The migration pattern of impurity sputtered from RF guarder limiter, is simulated by a test particle module. The electric potential with RF sheath boundary condition on the guard limiter and the thermal sheath boundary condition on the divertor surface are used. The turbulence transport is implemented by random walk model. It is found the RF sheath potential enhances the impurity percentage lost at low filed side middle plane, and decreases impurity percentage drifting into core region. This beneficial effect is stronger when sheath potential is large. When turbulence transport is strong enough, their migration pattern will be dominated by transport, not by sheath potential. The Resonant Magnetic field Perturbation (RMP) is successfully applied in EAST experiment and the suppression and mitigation effect on ELM is obtained. A two field fluid model is used to simulate the plasma response to RMP in EAST geometry. The current sheet on the resonance surface is obtained initially and the resonant component of radial magnetic field is suppressed there. With plasma rotation, the Alfven resonance occurs and the current is separated into two current sheets. The simulation result will be integrated with the ELM simulations to study the effects of RMP on ELM. Prepared by LLNL under Contract DE-AC52-07NA27344 and the China Natural Science Foundation under Contract No. 11405215, 11505236 and 11675217.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroupa, Daniel M.; Hughes, Barbara K.; Miller, Elisa M.

Electronic impurity doping of bulk semiconductors is an essential component of semiconductor science and technology. Yet there are only a handful of studies demonstrating control of electronic impurities in semiconductor nanocrystals. Here, we studied electronic impurity doping of colloidal PbSe quantum dots (QDs) using a postsynthetic cation exchange reaction in which Pb is exchanged for Ag. We found that varying the concentration of dopants exposed to the as-synthesized PbSe QDs controls the extent of exchange. The electronic impurity doped QDs exhibit the fundamental spectroscopic signatures associated with injecting a free charge carrier into a QD under equilibrium conditions, including amore » bleach of the first exciton transition and the appearance of a quantum-confined, low-energy intraband absorption feature. Photoelectron spectroscopy confirms that Ag acts as a p-type dopant for PbSe QDs and infrared spectroscopy is consistent with k • p calculations of the size-dependent intraband transition energy. We find that to bleach the first exciton transition by an average of 1 carrier per QD requires that approximately 10% of the Pb be replaced by Ag. Here, we hypothesize that the majority of incorporated Ag remains at the QD surface and does not interact with the core electronic states of the QD. Instead, the excess Ag at the surface promotes the incorporation of <1% Ag into the QD core where it causes p-type doping behavior.« less

Synthesis and Spectroscopy of Silver-Doped PbSe Quantum Dots

DOE PAGES

Kroupa, Daniel M.; Hughes, Barbara K.; Miller, Elisa M.; ...

2017-06-25

Electronic impurity doping of bulk semiconductors is an essential component of semiconductor science and technology. Yet there are only a handful of studies demonstrating control of electronic impurities in semiconductor nanocrystals. Here, we studied electronic impurity doping of colloidal PbSe quantum dots (QDs) using a postsynthetic cation exchange reaction in which Pb is exchanged for Ag. We found that varying the concentration of dopants exposed to the as-synthesized PbSe QDs controls the extent of exchange. The electronic impurity doped QDs exhibit the fundamental spectroscopic signatures associated with injecting a free charge carrier into a QD under equilibrium conditions, including amore » bleach of the first exciton transition and the appearance of a quantum-confined, low-energy intraband absorption feature. Photoelectron spectroscopy confirms that Ag acts as a p-type dopant for PbSe QDs and infrared spectroscopy is consistent with k • p calculations of the size-dependent intraband transition energy. We find that to bleach the first exciton transition by an average of 1 carrier per QD requires that approximately 10% of the Pb be replaced by Ag. Here, we hypothesize that the majority of incorporated Ag remains at the QD surface and does not interact with the core electronic states of the QD. Instead, the excess Ag at the surface promotes the incorporation of <1% Ag into the QD core where it causes p-type doping behavior.« less

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

DOEpatents

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces

DOEpatents

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2015-07-07

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Analysis of passive surface-wave noise in surface microseismic data and its implications

USGS Publications Warehouse

Forghani-Arani, F.; Willis, M.; Haines, S.; Batzle, M.; Davidson, M.

2011-01-01

Tight gas reservoirs are projected to be a major portion of future energy resources. Because of their low permeability, hydraulic fracturing of these reservoirs is required to improve the permeability and reservoir productivity. Passive seismic monitoring is one of the few tools that can be used to characterize the changes in the reservoir due to hydraulic fracturing. Although the majority of the studies monitoring hydraulic fracturing exploit down hole microseismic data, surface microseismic monitoring is receiving increased attention because it is potentially much less expensive to acquire. Due to a broader receiver aperture and spatial coverage, surface microseismic data may be more advantageous than down hole microseismic data. The effectiveness of this monitoring technique, however, is strongly dependent on the signal-to-noise ratio of the data. Cultural and ambient noise can mask parts of the waveform that carry information about the subsurface, thereby decreasing the effectiveness of surface microseismic analysis in identifying and locating the microseismic events. Hence, time and spatially varying suppression of the surface-wave noise ground roll is a critical step in surface microseismic monitoring. Here, we study a surface passive dataset that was acquired over a Barnett Shale Formation reservoir during two weeks of hydraulic fracturing, in order to characterize and suppress the surface noise in this data. We apply techniques to identify the characteristics of the passive ground roll. Exploiting those characteristics, we can apply effective noise suppression techniques to the passive data. ?? 2011 Society of Exploration Geophysicists.

A Low-Cost Energy-Efficient Cableless Geophone Unit for Passive Surface Wave Surveys

PubMed Central

Dai, Kaoshan; Li, Xiaofeng; Lu, Chuan; You, Qingyu; Huang, Zhenhua; Wu, H. Felix

2015-01-01

The passive surface wave survey is a practical, non-invasive seismic exploration method that has increasingly been used in geotechnical engineering. However, in situ deployment of traditional wired geophones is labor intensive for a dense sensor array. Alternatively, stand-alone seismometers can be used, but they are bulky, heavy, and expensive because they are usually designed for long-term monitoring. To better facilitate field applications of the passive surface wave survey, a low-cost energy-efficient geophone system was developed in this study. The hardware design is presented in this paper. To validate the system’s functionality, both laboratory and field experiments were conducted. The unique feature of this newly-developed cableless geophone system allows for rapid field applications of the passive surface wave survey with dense array measurements. PMID:26404270

Influence of deposition temperature of thermal ALD deposited Al{sub 2}O{sub 3} films on silicon surface passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir

2015-06-15

The effect of deposition temperature (T{sub dep}) and subsequent annealing time (t{sub anl}) of atomic layer deposited aluminum oxide (Al{sub 2}O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, Q{sub F}. The interface defect density (D{sub it}) decreases with increase in T{sub dep} which further decreases with t{sub anl} up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for T{sub dep} ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized bymore » high thermal budget process (t{sub anl} between 10 to 30 min)« less

Pb 2+–Calcite Interactions under Far-from-Equilibrium Conditions: Formation of Micropyramids and Pseudomorphic Growth of Cerussite

DOE PAGES

Yuan, Ke; De Andrade, Vincent; Feng, Zhange; ...

2018-01-04

The presence of impurity ions is known to significantly influence mineral surface morphology during crystal growth from aqueous solution, but knowledge on impurity ion-mineral interactions during dissolution under far-from equilibrium conditions remains limited. Here we show that calcite (CaCO 3) exhibits a rich array of dissolution features in the presence of Pb. During the initial stage, calcite exhibits non-classical surface features characterized as micro pyramids developed spontaneously in acidic Pb-bearing solutions. Subsequent pseudomorphic growth of cerussite (PbCO 3) was observed, where nucleation occurred entirely within a pore space created by dissolution at the calcite/substrate interface. Uneven growth rates yielded amore » cerussite shell made of lath- or dendritic-shaped crystals. The cerussite phase was separated from the calcite by pores of less than 200 nm under transmission X-ray microscopy, consistent with the interface-coupled dissolution-precipitation mechanism. These results show that impurity metal ions exert significant control over the microscale dissolution features found on mineral surfaces and provide new insights into interpreting and designing micro structures observed in naturally-occurring and synthetic carbonate minerals by dissolution. In addition, heterogeneous micro-environments created in transport limited reactions under pore spaces may lead to unusual growth forms during crystal nucleation and precipitation.« less

Methods of electrophoretic deposition for functionally graded porous nanostructures and systems thereof

DOEpatents

Worsley, Marcus A; Baumann, Theodore F; Satcher, Joe H; Olson, Tammy Y; Kuntz, Joshua D; Rose, Klint A

2015-03-03

In one embodiment, an aerogel includes a layer of shaped particles having a particle packing density gradient in a thickness direction of the layer, wherein the shaped particles are characterized by being formed in an electrophoretic deposition (EPD) process using an impurity. In another embodiment, a method for forming a functionally graded porous nanostructure includes adding particles of an impurity and a solution to an EPD chamber, applying a voltage difference across the two electrodes of the EPD chamber to create an electric field in the EPD chamber, and depositing the material onto surfaces of the particles of the impurity to form shaped particles of the material. Other functionally graded materials and methods are described according to more embodiments.

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinello, M., E-mail: mmartine@fnal.gov; Checchin, M.; Department of Physics, Illinois Institute of Technology, Chicago, Illinois 60616

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. This effect is attributed to the lowering of the Mattis-Bardeen surface resistance with increasing accelerating field; however, the microscopic origin of this phenomenon is poorly understood. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper, we conduct a systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surfacemore » treatments for niobium resonators. Adding these results together, we are able to show which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. These results also provide insights on the physics behind the change in the field dependence of the Mattis-Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.« less

Multi-scale modeling to relate Be surface temperatures, concentrations and molecular sputtering yields

NASA Astrophysics Data System (ADS)

Lasa, Ane; Safi, Elnaz; Nordlund, Kai

2015-11-01

Recent experiments and Molecular Dynamics (MD) simulations show erosion rates of Be exposed to deuterium (D) plasma varying with surface temperature and the correlated D concentration. Little is understood how these three parameters relate for Be surfaces, despite being essential for reliable prediction of impurity transport and plasma facing material lifetime in current (JET) and future (ITER) devices. A multi-scale exercise is presented here to relate Be surface temperatures, concentrations and sputtering yields. Kinetic Monte Carlo (MC) code MMonCa is used to estimate equilibrium D concentrations in Be at different temperatures. Then, mixed Be-D surfaces - that correspond to the KMC profiles - are generated in MD, to calculate Be-D molecular erosion yields due to D irradiation. With this new database implemented in the 3D MC impurity transport code ERO, modeling scenarios studying wall erosion, such as RF-induced enhanced limiter erosion or main wall surface temperature scans run at JET, can be revisited with higher confidence. Work supported by U.S. DOE under Contract DE-AC05-00OR22725.

Estimating surface soil moisture from SMAP observations using a neural network technique

USDA-ARS?s Scientific Manuscript database

A Neural Network (NN) algorithm was developed to estimate global surface soil moisture for April 2015 to June 2016 with a 2-3 day repeat frequency using passive microwave observations from the Soil Moisture Active Passive (SMAP) satellite, surface soil temperatures from the NASA Goddard Earth Observ...

Effectiveness of passivation techniques on hydrogen desorption in a tritium environment

NASA Astrophysics Data System (ADS)

Woodall, Steven Michael

2009-11-01

Tritium is a radioactive isotope of hydrogen. It is used as a fuel in fusion reactors, a booster material in nuclear weapons and as a light source in commercial applications. When tritium is used in fusion reactors, and especially when used in the manufacture of nuclear weapons, purity is critical. For U.S. Department of Energy use, tritium is recycled by Savannah River Site in South Carolina and is processed to a minimum purity of 99.5%. For use elsewhere in the country, it must be shipped and stored, while maintaining the highest purity possible. As an isotope of hydrogen it exchanges easily with the most common isotope of hydrogen, protium. Stainless steel bottles are used to transport and store tritium. Protium, present in air, becomes associated in and on the surface of stainless steel during and after the manufacture of the steel. When filled, the tritium within the bottle exchanges with the protium in and on the surface of the stainless steel, slowly contaminating the pure tritium with protium. The stainless steel is therefore passivated to minimize the protium outgrowth of the bottles into the pure tritium. This research is to determine how effective different passivation techniques are in minimizing the contamination of tritium with protium. Additionally, this research will attempt to determine a relationship between surface chemistry of passivated steels and protium contamination of tritium. The conclusions of this research found that passivated bottles by two companies which routinely provide passivated materials to the US Department of Energy provide low levels of protium outgrowth into pure tritium. A bottle passivated with a material to prevent excessive corrosion in a highly corrosive environment, and a clean and polished bottle provided outgrowth rates roughly twice those of the passivated bottles above. Beyond generally high levels of chromium, oxygen, iron and nickel in the passivated bottles, there did not appear to be a strong correlation between surface chemistry in the surface of the bottles and protium outgrowth rates.

Investigation of passive films on nickel Alloy 690 in lead-containing environments

NASA Astrophysics Data System (ADS)

Peng, B.; Lu, B. T.; Luo, J. L.; Lu, Y. C.; Ma, H. Y.

2008-09-01

Passive films formed on Alloy UNS N06690 were investigated in simulated crevice chemistries. It was found the role of lead in corrosion processes is strongly dependent on the pH value of the testing solutions. At pH 1.5 the effect of lead is narrowly noticeable; while at pH 12.7, lead has a significant influence on the electrochemical performance of alloy UNS N06690. The lead alters the surface morphologies at both pH and account for higher hydroxide content in the surface film at pH 12.7. The lead incorporation hinders the formation of spinel oxides during the passivation in alkaline solution. Nanoindentation tests indicate a significant lead-induced degradation in the mechanical properties of passive films. The passivation degradation is attributed to detrimental effects of lead via interrupting the dehydration process and hindering the formation of protective layers on the alloy surface.

Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

NASA Astrophysics Data System (ADS)

O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

2017-02-01

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Front surface passivation of silicon solar cells with antireflection coating

NASA Technical Reports Server (NTRS)

Crotty, G.; Daud, T.; Kachare, R.

1987-01-01

It is demonstrated that the deposition and postdeposition sintering of an antireflection (AR) coating in hydrogen acts to passivate silicon solar cells. Cells with and without an SiO2 passivating layer, coated with a TiO(x)/Al2O3 AR coating, showed comparable enhancements in short-wavelength spectral response and in open-circuit voltage Voc after sintering at 400 C for 5 min in a hydrogen ambient. The improvement in Voc of cells without SiO2 is attributed to front-surface passivation by the AR coating during processing.

Enhanced photoelectrochemical water splitting performance of anodic TiO(2) nanotube arrays by surface passivation.

PubMed

Gui, Qunfang; Xu, Zhen; Zhang, Haifeng; Cheng, Chuanwei; Zhu, Xufei; Yin, Min; Song, Ye; Lu, Linfeng; Chen, Xiaoyuan; Li, Dongdong

2014-10-08

One-dimensional anodic titanium oxide nanotube (TONT) arrays provide a direct pathway for charge transport, and thus hold great potential as working electrodes for electrochemical energy conversion and storage devices. However, the prominent surface recombination due to the large amount surface defects hinders the performance improvement. In this work, the surface states of TONTs were passivated by conformal coating of high-quality Al2O3 onto the tubular structures using atomic layer deposition (ALD). The modified TONT films were subsequently employed as anodes for photoelectrochemical (PEC) water splitting. The photocurrent (0.5 V vs Ag/AgCl) recorded under air mass 1.5 global illumination presented 0.8 times enhancement on the electrode with passivation coating. The reduction of surface recombination rate is responsible for the substantially improved performance, which is proposed to have originated from a decreased interface defect density in combination with a field-effect passivation induced by a negative fixed charge in the Al2O3 shells. These results not only provide a physical insight into the passivation effect, but also can be utilized as a guideline to design other energy conversion devices.

Wall Conditioning Characterization in NSTX-U

NASA Astrophysics Data System (ADS)

Caron, D.; Soukhanovskii, V.; Scotti, F.; Weller, M.

2016-10-01

Impurities in tokamak plasmas can lead to disruptive instabilities due to radiative energy loss which impede access to high-confinements mode. One source of impurities in NSTX-U are water molecules trapped in graphite plasma facing components (PFCs), which make up the walls and divertors. Hydrogen and oxygen impurities are released into the plasma due to plasma surface interactions. Extreme ultraviolet (EUV) and visible spectrometers are used in conjunction with a residual gas analyzer (RGA) to characterize the source and amount of released impurities. A high resolution visible spectrometer measured H/D Balmer- α intensity ratio on the inner wall, the upper and lower divertors, and provided a hydrogen time history for shot-to-shot trends. The RGA provided partial pressure trends of masses 2 (H2) , 16 (O2) , and 18 (H2O). Trends of O VIII and C VI spectral line intensities from the core plasma were obtained from the EUV spectrometer. The trends are correlated with wall conditioning, namely helium glow discharge cleaning and boronization. Using these trends, impurity content monitoring and recommendations for wall conditioning can be implemented. Work supported by DOE under Contracts DE-AC52-07NA27344 and DE-AC02-09CH11466.

Impurity sputtering from the guard limiter of the lower hybrid wave antenna in a tokamak

NASA Astrophysics Data System (ADS)

Ou, Jing; Xiang, Nong; Men, Zongzheng

2018-01-01

The hot spots on the guard limiter of the lower hybrid wave (LHW) antenna in a tokamak were believed to be associated with the energetic electrons produced by the wave-plasma interaction, leading to a sudden increase of impurity influx and even ending with disruption. To investigate the carbon sputtering from the guard limiter of the LHW antenna, the impurity sputtering yield is calculated by coupling the module of Plasma Surface Interaction [Warrier et al., Comput. Phys. Commun. 46, 160 (2004)] with the models for the sheath of plasma containing energetic electron and for the material heat transport. It is found that the presence of a small population of energetic electrons can change significantly the impurity sputtering yield, as a result of the sheath potential modification. For the typical plasma parameters in the current tokamak, with an increase in the energetic electron component, the physical sputtering yield reaches its maximum and then decreases slowly, while the chemical sputtering yield demonstrates a very sharp increase and then decreases rapidly. In addition, effects of the ion temperature and background electron density on the impurity sputtering are also discussed.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

PubMed

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

PubMed Central

2017-01-01

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm–2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells. PMID:28885032

Surface property detection apparatus and method

DOEpatents

Martens, J.S.; Ginley, D.S.; Hietala, V.M.; Sorensen, N.R.

1995-08-08

Apparatus and method for detecting, determining, and imaging surface resistance corrosion, thin film growth, and oxide formation on the surface of conductors or other electrical surface modification. The invention comprises a modified confocal resonator structure with the sample remote from the radiating mirror. Surface resistance is determined by analyzing and imaging reflected microwaves; imaging reveals anomalies due to surface impurities, non-stoichiometry, and the like, in the surface of the superconductor, conductor, dielectric, or semiconductor. 4 figs.

Frequency-Wavenumber (FK)-Based Data Selection in High-Frequency Passive Surface Wave Survey

NASA Astrophysics Data System (ADS)

Cheng, Feng; Xia, Jianghai; Xu, Zongbo; Hu, Yue; Mi, Binbin

2018-04-01

Passive surface wave methods have gained much attention from geophysical and civil engineering communities because of the limited application of traditional seismic surveys in highly populated urban areas. Considering that they can provide high-frequency phase velocity information up to several tens of Hz, the active surface wave survey would be omitted and the amount of field work could be dramatically reduced. However, the measured dispersion energy image in the passive surface wave survey would usually be polluted by a type of "crossed" artifacts at high frequencies. It is common in the bidirectional noise distribution case with a linear receiver array deployed along roads or railways. We review several frequently used passive surface wave methods and derive the underlying physics for the existence of the "crossed" artifacts. We prove that the "crossed" artifacts would cross the true surface wave energy at fixed points in the f-v domain and propose a FK-based data selection technique to attenuate the artifacts in order to retrieve the high-frequency information. Numerical tests further demonstrate the existence of the "crossed" artifacts and indicate that the well-known wave field separation method, FK filter, does not work for the selection of directional noise data. Real-world applications manifest the feasibility of the proposed FK-based technique to improve passive surface wave methods by a priori data selection. Finally, we discuss the applicability of our approach.

Frequency-Wavenumber (FK)-Based Data Selection in High-Frequency Passive Surface Wave Survey

NASA Astrophysics Data System (ADS)

Cheng, Feng; Xia, Jianghai; Xu, Zongbo; Hu, Yue; Mi, Binbin

2018-07-01

Passive surface wave methods have gained much attention from geophysical and civil engineering communities because of the limited application of traditional seismic surveys in highly populated urban areas. Considering that they can provide high-frequency phase velocity information up to several tens of Hz, the active surface wave survey would be omitted and the amount of field work could be dramatically reduced. However, the measured dispersion energy image in the passive surface wave survey would usually be polluted by a type of "crossed" artifacts at high frequencies. It is common in the bidirectional noise distribution case with a linear receiver array deployed along roads or railways. We review several frequently used passive surface wave methods and derive the underlying physics for the existence of the "crossed" artifacts. We prove that the "crossed" artifacts would cross the true surface wave energy at fixed points in the f- v domain and propose a FK-based data selection technique to attenuate the artifacts in order to retrieve the high-frequency information. Numerical tests further demonstrate the existence of the "crossed" artifacts and indicate that the well-known wave field separation method, FK filter, does not work for the selection of directional noise data. Real-world applications manifest the feasibility of the proposed FK-based technique to improve passive surface wave methods by a priori data selection. Finally, we discuss the applicability of our approach.

NaK Plugging Meter Design for the Feasibility Test Loops

NASA Technical Reports Server (NTRS)

Pearson, J. Boise; Godfroy, Thomas J.; Reid, Robert S.; Polzin, Kurt A.

2008-01-01

The design and predicted performance of a plugging meter for use in the measurement of NaK impurity levels are presented. The plugging meter is incorporated into a Feasibility Test Loop (FTL), which is a small pumped-NaK loop designed to enable the rapid, small-scale evaluation of techniques such as in situ purification methods and to permit the measurement of bulk material transport effects (not mechanisms) under flow conditions that are representative of a fission surface power reactor. The FTL operates at temperatures similar to those found in a reactor, with a maximum hot side temperature of 900 K and a corresponding cold side temperature of 860 K. In the plugging meter a low flow rate bypass loop is cooled until various impurities (primarily oxides) precipitate out of solution. The temperatures at which these impurities precipitate are indicative of the level of impurities in the NaK. The precipitates incrementally plug a small orifice in the bypass loop, which is detected by monitoring changes in the liquid metal flow rate.

Spatially resolved NMR spectra for the Swiss cheese model in heavy fermion PuCoGa5 superconductor

NASA Astrophysics Data System (ADS)

Das, Tanmoy; Zhu, Jian-Xin; Balatsky, A. V.; Graf, M. J.

2011-03-01

Spatially resolved NMR experiments, which probe the local electronic excitations, play a vital role for studying the pairing symmetry of unconventional superconductors. Here we calculate the spatial modulation of the NMR spin-lattice relaxation rate (1/T1) for the Swiss cheese model as a function of impurity concentration in PuCoGa5 superconductor. The local suppression of the superconducting order parameter due to impurities is related to the number of holes in the Swiss cheese model. Our results indicate that Friedel-like oscillations,as seen in the local-density of states near an impurity, are also present in the behavior of 1/T1 as one moves away from the impurity site. We demonstrate that the gap nodes, which are filled by disorder, can be probed by NMR through the local information encoded in the spectra. The advantage of spatially resolved NMR compared to STM measurements is that the former probe is not sensitive to surface states. Work is supported by US DOE.

The specific diffusion behaviour in paper and migration modelling from recycled board into dry foodstuffs.

PubMed

Hauder, J; Benz, H; Rüter, M; Piringer, O-G

2013-01-01

Recycled board plays an important role in food packaging, but the great variety of organic impurities must be considered as potential food contaminants. The diffusion behaviour of the impurities is significantly different from that in plastic materials. The two-layer concept for paper and board introduced recently is now treated in more detail. In the rate-determining surface region the diffusion coefficients of the n-alkanes in the homologous series with 15-35 carbon atoms decrease proportionally as their vapour pressures. This leads to a different equation of the diffusion coefficients in comparison with that for the core layer. Different polarities of the migrants have additional influences on the diffusion due to their interactions with the fibre matrix. A new analytical method for the quantification of aromatic impurities has previously been developed. Based on this method and on the described diffusion behaviour, a migration model for specific and global mass transfer of impurities from recycled board into dry food and food simulants is given.

Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, P.; Coutinho, J., E-mail: jose.coutinho@ua.pt; Torres, V. J. B.

2014-07-21

While the contamination of solar silicon by fast diffusing transition metals can be now limited through gettering, much attention has been drawn to the slow diffusing species, especially the early 3d and 4d elements. To some extent, hydrogen passivation has been successful in healing many deep centers, including transition metals in Si. Recent deep-level transient spectroscopy (DLTS) measurements concerning hydrogen passivation of Ti revealed the existence of at least four electrical levels related to Ti{sub i}H{sub n} in the upper-half of the gap. These findings challenge the existing models regarding both the current level assignment as well as the structure/speciesmore » involved in the defects. We revisit this problem by means of density functional calculations and find that progressive hydrogenation of interstitial Ti is thermodynamically stable in intrinsic and n-doped Si. Full passivation may not be possible to attain in p-type Si as Ti{sub i}H{sub 3} and Ti{sub i}H{sub 4} are metastable against dissociation and release of bond-centered protons. All DLTS electron traps are assigned, namely, E40′ to Ti{sub i}H(-/0), E170′ to Ti{sub i}H{sub 3}(0/+), E(270) to Ti{sub i}H{sub 2}(0/+), and E170 to Ti{sub i}H(0/+) transitions. Ti{sub i}H{sub 4} is confirmed to be electrically inert.« less

Melting Frozen Droplets Using Photo-Thermal Traps

NASA Astrophysics Data System (ADS)

Dash, Susmita; de Ruiter, Jolet; Varanasi, Kripa

2017-11-01

Ice buildup is an operational and safety hazard in wind turbines, power lines, and airplanes. While traditional de-icing methods are energy-intensive or environmentally unfriendly, passive anti-icing approach using superhydrophobic surfaces fails under humid conditions, which necessitates development of passive deicing methods. Here, we investigate a passive technique for deicing using a multi-layer surface design that can efficiently absorb and convert the incident solar radiation to heat. The corresponding increase in substrate temperature allows for easy removal of frozen droplets from the surface. We demonstrate the deicing performance of the designed surface both at very low temperatures, and under frost and snow coverage.

Superacid Passivation of Crystalline Silicon Surfaces.

PubMed

Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

2016-09-14

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

Passivation of high temperature superconductors

NASA Technical Reports Server (NTRS)

Vasquez, Richard P. (Inventor)

1991-01-01

The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

Donor impurity incorporation during layer growth of Zn II-VI semiconductors

NASA Astrophysics Data System (ADS)

Barlow, D. A.

2017-12-01

The maximum halogen donor concentration in Zn II-VI semiconductors during layer growth is studied using a standard model from statistical mechanics. Here the driving force for incorporation is an increase in entropy upon mixing of the donor impurity into the available anion lattice sites in the host binary. A formation energy opposes this increase and thus equilibrium is attained at some maximum concentration. Considering the halogen donor impurities within the Zn II-VI binary semiconductors ZnO, ZnS, ZnSe and ZnTe, a heat of reaction obtained from reported diatomic bond strengths is shown to be directly proportional to the log of maximum donor concentration. The formation energy can then be estimated and an expression for maximum donor concentration derived. Values for the maximum donor concentration with each of the halogen impurities, within the Zn II-VI compounds, are computed. This model predicts that the halogens will serve as electron donors in these compounds in order of increasing effectiveness as: F, Br, I, Cl. Finally, this result is taken to be equivalent to an alternative model where donor concentration depends upon impurity diffusion and the conduction band energy shift due to a depletion region at the growing crystal's surface. From this, we are able to estimate the diffusion activation energy for each of the impurities mentioned above. Comparisons are made with reported values and relevant conclusions presented.

Method for cleaning and passivating a metal surface

NASA Technical Reports Server (NTRS)

Alexander, George B. (Inventor); Carpenter, Norman F. (Inventor)

1976-01-01

A cleaning solvent useful in the cleaning of metal surfaces, e.g. nickle-iron alloys, contains sulfamic acid, citric acid, a solvent for hydrocarbon residues, and a surfactant. Metal surfaces are cleaned by contacting the surface with the cleaning solvent and then passivated by contact with aqueous solutions of citric acid or sodium nitrite or a combination of the two.

46 CFR 170.295 - Special consideration for free surface of passive roll stabilization tanks.

Code of Federal Regulations, 2014 CFR

2014-10-01

... the moment of inertia of the free surface in the roll tank; (ii) (d) is the density of the liquid in... 46 Shipping 7 2014-10-01 2014-10-01 false Special consideration for free surface of passive roll...) SUBDIVISION AND STABILITY STABILITY REQUIREMENTS FOR ALL INSPECTED VESSELS Free Surface § 170.295 Special...

46 CFR 170.295 - Special consideration for free surface of passive roll stabilization tanks.

Code of Federal Regulations, 2012 CFR

2012-10-01

... the moment of inertia of the free surface in the roll tank; (ii) (d) is the density of the liquid in... 46 Shipping 7 2012-10-01 2012-10-01 false Special consideration for free surface of passive roll...) SUBDIVISION AND STABILITY STABILITY REQUIREMENTS FOR ALL INSPECTED VESSELS Free Surface § 170.295 Special...

46 CFR 170.295 - Special consideration for free surface of passive roll stabilization tanks.

Code of Federal Regulations, 2013 CFR

2013-10-01

... the moment of inertia of the free surface in the roll tank; (ii) (d) is the density of the liquid in... 46 Shipping 7 2013-10-01 2013-10-01 false Special consideration for free surface of passive roll...) SUBDIVISION AND STABILITY STABILITY REQUIREMENTS FOR ALL INSPECTED VESSELS Free Surface § 170.295 Special...

Effects of surface passivation on twin-free GaAs nanosheets.

PubMed

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

Effect of surface passivation on corrosion resistance and antibacterial properties of Cu-bearing 316L stainless steel

NASA Astrophysics Data System (ADS)

Zhao, Jinlong; Xu, Dake; Shahzad, M. Babar; Kang, Qiang; Sun, Ying; Sun, Ziqing; Zhang, Shuyuan; Ren, Ling; Yang, Chunguang; Yang, Ke

2016-11-01

The resistance for pitting corrosion, passive film stability and antibacterial performance of 316L-Cu SS passivated by nitric acid solution containing certain concentration of copper sulfate, were studied by electrochemical cyclic polarization, electrochemical impedance spectroscopy (EIS) and co-culture with bacteria. Inductively coupled plasma mass spectrometry (ICP-MS) was used to analyze the Cu2+ ions release from 316L-Cu SS surface. XPS analysis proved that the enrichment of CuO, Cr2O3 and Cr(OH)3 on the surface of specimen could simultaneously guarantee a better corrosion resistance and stable antibacterial properties. The biocompatibility evaluation determined by RTCA assay also indicated that the 316L-Cu SS after antibacterial passivation was completely biocompatible.

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

NASA Astrophysics Data System (ADS)

Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

2017-04-01

In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Meng

2015-03-01

The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells.more » These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6 ohm-cm, similar to that of screen-printed Ag. 3) Demonstration of two all-Al, Ag-free Si solar cells, with an electroplated Al front electrode and a screen-printed Al back electrode. One cell is an industrial p-type front-emitter cell, and the other is an n-type back-emitter cell. The efficiency of the p-type cell is close to 15%. This is an industrial cell and its efficiency is capped at ~18%. 4) Demonstration of grain boundary passivation by both hydrogen and sulfur using hydrogen sulfide (H2S). When the new grain boundary passivation is combined with Al2O3 surface passivation and post-annealing, the minority carrier lifetime in the p-type multicrystalline Si samples shows a significant improvement up to 68 fold. 5) In a side project, a simple green process is developed which is capable of recycling over 90% of the Si material in end-of-life crystalline-Si solar cells. The recycled Si meets the specifications for solar-grade Si and can be used as a new poly-Si feedstock for ingot growth.« less

Chip PCR. I. Surface passivation of microfabricated silicon-glass chips for PCR.

PubMed Central

Shoffner, M A; Cheng, J; Hvichia, G E; Kricka, L J; Wilding, P

1996-01-01

The microreaction volumes of PCR chips (a microfabricated silicon chip bonded to a piece of flat glass to form a PCR reaction chamber) create a relatively high surface to volume ratio that increases the significance of the surface chemistry in the polymerase chain reaction (PCR). We investigated several surface passivations in an attempt to identify 'PCR friendly' surfaces and used those surfaces to obtain amplifications comparable with those obtained in conventional PCR amplification systems using polyethylene tubes. Surface passivations by a silanization procedure followed by a coating of a selected protein or polynucleotide and the deposition of a nitride or oxide layer onto the silicon surface were investigated. Native silicon was found to be an inhibitor of PCR and amplification in an untreated PCR chip (i.e. native slicon) had a high failure rate. A silicon nitride (Si(3)N(4) reaction surface also resulted in consistent inhibition of PCR. Passivating the PCR chip using a silanizing agent followed by a polymer treatment resulted in good amplification. However, amplification yields were inconsistent and were not always comparable with PCR in a conventional tube. An oxidized silicon (SiO(2) surface gave consistent amplifications comparable with reactions performed in a conventional PCR tube. PMID:8628665

Effect of temperature on the passivation behavior of steel rebar

NASA Astrophysics Data System (ADS)

Chen, Shan-meng; Cao, Bei; Wu, Yin-shun; Ma, Ke

2014-05-01

Steel rebar normally forms an oxide or rusty skin before it is embedded into concrete and the passivation properties of this skin will be heavily influenced by temperature. To study the effect of temperature on the passivation properties of steel rebar under different surface conditions, we conducted scanning electron microscopy (SEM) observations and electrochemical measurements, such as measurements of the free corrosion potential and polarization curves of HPB235 steel rebar. These measurements identified three kinds of surfaces: polished, oxide skin, and rusty skin. Our results show that the passivation properties of all the surface types decrease with the increase of temperature. Temperature has the greatest effect on the rusty-skin rebar and least effect on the polished steel rebar, because of cracks and crevices on the mill scale on the steel rebar's surface. The rusty-skin rebar exhibits the highest corrosion rate because crevice corrosion can accelerate the corrosion of the steel rebar, particularly at high temperature. The results also indicate that the threshold temperatures of passivation for the oxide-skin rebar and the rusty-skin rebar are 37°C and 20°C, respectively.

Optimized ultra-thin manganin alloy passivated fine-pitch damascene compatible bump-less Cu-Cu bonding at sub 200 °C for three-dimensional Integration applications

NASA Astrophysics Data System (ADS)

Panigrahi, Asisa Kumar; Hemanth Kumar, C.; Bonam, Satish; Ghosh, Tamal; Rama Krishna Vanjari, Siva; Govind Singh, Shiv

2018-02-01

Enhanced Cu diffusion, Cu surface passivation, and smooth surface at the bonding interface are the key essentials for high quality Cu-Cu bonding. Previously, we have demonstrated optimized 3 nm thin Manganin metal-alloy passivation from oxidation and also helps to reduce the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrated an ultra fine-pitch (<25 µm) Cu-Cu bonding using an optimized Manganin metal-alloy passivation. This engineered surface passivation approach led to high quality bonding at sub 200 °C temperature and 0.4 MPa. Very low specific contact resistance of 1.4 × 10-7 Ω cm2 and the defect free bonded interface is clear indication of high quality bonding for future multilayer integrations. Furthermore, electrical characterization of the bonded structure was performed under various robust conditions as per International Technology Roadmap for Semiconductors (ITRS Roadmap) in order to satisfy the stability of the bonded structure.

Atomic Scale Understanding of Poly-Si/SiO2/c-Si Passivated Contacts: Passivation Degradation Due to Metallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguiar, Jeffery A.; Young, David; Lee, Benjamin

2016-11-21

The key attributes for achieving high efficiency crystalline silicon solar cells include class leading developments in the ability to approach the theoretical limits of silicon solar technology (29.4% efficiency). The push for high efficiency devices is further compounded with the clear need for passivation to reduce recombination at the metal contacts. At the same time there is stringent requirement to retain the same material device quality, surface passivation, and performance characteristics following subsequent processing. The development of passivated silicon cell structures that retain active front and rear surface passivation and overall material cell quality is therefore a relevant and activemore » area of development. To address the potential outcomes of metallization on passivated silicon stack, we report on some common microstructural features of degradation due to metallization for a series of silicon device stacks. A fundamental materials understanding of the metallization process on retaining high-efficiency passivated Si devices is therefore gained over these series of results.« less

Radical Initiated Hydrosilylation on Silicon Nanocrystal Surfaces: An Evaluation of Functional Group Tolerance and Mechanistic Study.

PubMed

Yang, Zhenyu; Gonzalez, Christina M; Purkait, Tapas K; Iqbal, Muhammad; Meldrum, Al; Veinot, Jonathan G C

2015-09-29

Hydrosilylation is among the most common methods used for modifying silicon surface chemistry. It provides a wide range of surface functionalities and effective passivation of surface sites. Herein, we report a systematic study of radical initiated hydrosilylation of silicon nanocrystal (SiNC) surfaces using two common radical initiators (i.e., 2,2'-azobis(2-methylpropionitrile) and benzoyl peroxide). Compared to other widely applied hydrosilylation methods (e.g., thermal, photochemical, and catalytic), the radical initiator based approach is particle size independent, requires comparatively low reaction temperatures, and yields monolayer surface passivation after short reaction times. The effects of differing functional groups (i.e., alkene, alkyne, carboxylic acid, and ester) on the radical initiated hydrosilylation are also explored. The results indicate functionalization occurs and results in the formation of monolayer passivated surfaces.

Remote sensing of Earth terrain

NASA Technical Reports Server (NTRS)

Kong, J. A.

1993-01-01

Progress report on remote sensing of Earth terrain covering the period from Jan. to June 1993 is presented. Areas of research include: radiative transfer model for active and passive remote sensing of vegetation canopy; polarimetric thermal emission from rough ocean surfaces; polarimetric passive remote sensing of ocean wind vectors; polarimetric thermal emission from periodic water surfaces; layer model with tandom spheriodal scatterers for remote sensing of vegetation canopy; application of theoretical models to active and passive remote sensing of saline ice; radiative transfer theory for polarimetric remote sensing of pine forest; scattering of electromagnetic waves from a dense medium consisting of correlated mie scatterers with size distributions and applications to dry snow; variance of phase fluctuations of waves propagating through a random medium; polarimetric signatures of a canopy of dielectric cylinders based on first and second order vector radiative transfer theory; branching model for vegetation; polarimetric passive remote sensing of periodic surfaces; composite volume and surface scattering model; and radar image classification.

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

NASA Astrophysics Data System (ADS)

Lynn, K. G.; Asoka-Kumar, P.

The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.

Effect of Surface Morphology and Magnetic Impurities on the Electronic Structure in Cobalt-Doped BaFe 2 As 2 Superconductors

DOE PAGES

Zou, Qiang; Wu, Zhiming; Fu, Mingming; ...

2017-02-03

Combined scanning tunneling microscopy, spectroscopy, and local barrier height (LBH) studies show that low-temperature-cleaved optimally doped Ba(Fe 1–xCo x) 2As 2 crystals with x = 0.06, with T c = 22 K, have complicated morphologies. Although the cleavage surface and hence the morphologies are variable, the superconducting gap maps show the same gap widths and nanometer size inhomogeneities irrelevant to the morphology. Based on the spectroscopy and LBH maps, the bright patches and dark stripes in the morphologies are identified as Ba- and As-dominated surface terminations, respectively. Magnetic impurities, possibly due to Co or Fe atoms, are believed to createmore » local in-gap state and, in addition, suppress the superconducting coherence peaks. Lastly, this study will clarify the confusion on the cleavage surface terminations of the Fe-based superconductors and its relation with the electronic structures.« less

Hardening of steels and cast irons by passivation of their surface and heat treatment

NASA Astrophysics Data System (ADS)

Kulikov, A. I.

1994-01-01

Examples of the use of a casehardening (CH) method (surface passivation and standard heat treatment) developed to increase hardness and corrosion resistance and to lower the surface roughness of various components and tools — glass molds. piston rings and ball-bearing races — are presented in this paper.

Process for preparing organoclays for aqueous and polar-organic systems

DOEpatents

Chaiko, David J.

2001-01-01

A process for preparing organoclays as thixotropic agents to control the rheology of water-based paints and other aqueous and polar-organic systems. The process relates to treating low-grade clay ores to achieve highly purified organoclays and/or to incorporate surface modifying agents onto the clay by adsorption and/or to produce highly dispersed organoclays without excessive grinding or high shear dispersion. The process involves the treatment of impure, or run-of-mine, clay using an aqueous biphasic extraction system to produce a highly dispersed clay, free of mineral impurities and with modified surface properties brought about by adsorption of the water-soluble polymers used in generating the aqueous biphasic extraction system. This invention purifies the clay to greater than 95%.

Sulfur at nickel-alumina interfaces - Molecular orbital theory

NASA Technical Reports Server (NTRS)

Hong, S. Y.; Anderson, Alfred B.; Smialek, James L.

1990-01-01

Previous studies on Al-Ni alloys containing sulfur as an impurity suggest that, when S is in the interface between a metal and an oxide scale, it weakens the chemical bonding between them. This paper investigates factors responsible for this effect, using a molecular orbital theory to predict sulfur structures and electronic properties on the Ni-Al2O3 interface. It is shown that, in absence of S, the basal plane of Al2O3 will bind strongly through the Al(3+) cation surface to Ni (111). When segregated S impurity is present on the Ni surface, there are too few interfacial AlS bonds to effect good adhesion, leading to an inhibition of the oxide scale adhesion in NiCrAl alloys.

Segregation Behavior of Sulfur and Other Impurities Onto the Free Surfaces of ED-Ni Deposits

NASA Technical Reports Server (NTRS)

Panda, Binayak; Jerman, Gregory; Gentz, Steven J. (Technical Monitor)

2000-01-01

Most researchers attribute grain boundary embrittlement in electro-deposited Nickel (ED-Ni) to the presence of small quantities of Sulfur as an impurity. It occurs in a highly mobile form that segregates to the grain boundaries. Evaluation of Sulfur segregation requires that a sample be fractured through the grain boundaries. However, this action may not always be possible. ED-Ni is inherently tough at ambient temperature, especially if a low level of Sulfur was intentionally maintained. A new method was developed to study Sulfur and other migrant species to the grain boundaries, which also migrate to free surfaces. A test specimen is heated by a quartz lamp within the sample preparation chamber, allowing the mobile species to migrate to polished free surfaces. There the mobile species are analyzed using X-ray photoelectron spectroscopy (XPS) also known as Electron Spectroscopy for Chemical Analysis (ESCA).

Segregation Behavior of Sulfur and Other Impurities onto the Free Surfaces of ED-NI Deposits

NASA Technical Reports Server (NTRS)

Panda, B.; Jerman, G.

2001-01-01

Most researchers attribute grain boundary embrittlement in electro-deposited nickel (ED-Ni) to the presence of small quantities of sulfur as an impurity. It occurs in a highly mobile form that segregates to the grain boundaries. Evaluation of sulfur segregation requires that a sample be fractured through the grain boundaries. However, this action may not always be possible. ED-Ni is inherently tough at ambient temperature, especially if a low level of sulfur was intentionally maintained. A new method was developed to study sulfur and other migrant species to the grain boundaries, which also migrate to free surfaces. A test specimen is heated by a quartz lamp within the sample preparation chamber, allowing the mobile species to migrate to polished free surfaces. There the mobile species are analyzed using X-ray photoelectron spectroscopy (XPS) also known as Electron Spectroscopy for Chemical Analysis (ESCA).

Surface Passivation for Single-molecule Protein Studies

PubMed Central

Chandradoss, Stanley D.; Haagsma, Anna C.; Lee, Young Kwang; Hwang, Jae-Ho; Nam, Jwa-Min; Joo, Chirlmin

2014-01-01

Single-molecule fluorescence spectroscopy has proven to be instrumental in understanding a wide range of biological phenomena at the nanoscale. Important examples of what this technique can yield to biological sciences are the mechanistic insights on protein-protein and protein-nucleic acid interactions. When interactions of proteins are probed at the single-molecule level, the proteins or their substrates are often immobilized on a glass surface, which allows for a long-term observation. This immobilization scheme may introduce unwanted surface artifacts. Therefore, it is essential to passivate the glass surface to make it inert. Surface coating using polyethylene glycol (PEG) stands out for its high performance in preventing proteins from non-specifically interacting with a glass surface. However, the polymer coating procedure is difficult, due to the complication arising from a series of surface treatments and the stringent requirement that a surface needs to be free of any fluorescent molecules at the end of the procedure. Here, we provide a robust protocol with step-by-step instructions. It covers surface cleaning including piranha etching, surface functionalization with amine groups, and finally PEG coating. To obtain a high density of a PEG layer, we introduce a new strategy of treating the surface with PEG molecules over two rounds, which remarkably improves the quality of passivation. We provide representative results as well as practical advice for each critical step so that anyone can achieve the high quality surface passivation. PMID:24797261

Polarimetric passive remote sensing of periodic surfaces

NASA Technical Reports Server (NTRS)

Veysoglu, Murat E.; Yueh, H. A.; Shin, R. T.; Kong, J. A.

1991-01-01

The concept of polarimetry in active remote sensing is extended to passive remote sensing. The potential use of the third and fourth Stokes parameters U and V, which play an important role in polarimetric active remote sensing, is demonstrated for passive remote sensing. It is shown that, by the use of the reciprocity principle, the polarimetric parameters of passive remote sensing can be obtained through the solution of the associated direct scattering problem. These ideas are applied to study polarimetric passive remote sensing of periodic surfaces. The solution of the direct scattering problem is obtained by an integral equation formulation which involves evaluation of periodic Green's functions and normal derivative of those on the surface. Rapid evaluation of the slowly convergent series associated with these functions is observed to be critical for the feasibility of the method. New formulas, which are rapidly convergent, are derived for the calculation of these series. The study has shown that the brightness temperature of the Stokes parameter U can be significant in passive remote sensing. Values as high as 50 K are observed for certain configurations.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRVmore » is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.« less

Electrical and optical characterization of surface passivation in GaAs nanowires.

PubMed

Chang, Chia-Chi; Chi, Chun-Yung; Yao, Maoqing; Huang, Ningfeng; Chen, Chun-Chung; Theiss, Jesse; Bushmaker, Adam W; Lalumondiere, Stephen; Yeh, Ting-Wei; Povinelli, Michelle L; Zhou, Chongwu; Dapkus, P Daniel; Cronin, Stephen B

2012-09-12

We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

Role of carbon impurities on the surface morphology evolution of tungsten under high dose helium ion irradiation

NASA Astrophysics Data System (ADS)

Al-Ajlony, A.; Tripathi, J. K.; Hassanein, A.

2015-11-01

The effect of carbon impurities on the surface evolution (e.g., fuzz formation) of tungsten (W) surface during 300 eV He ions irradiation was studied. Several tungsten samples were irradiated by He ion beam with a various carbon ions percentage. The presence of minute carbon contamination within the He ion beam was found to be effective in preventing the fuzz formation. At higher carbon concentration, the W surface was found to be fully covered with a thick graphitic layer on the top of tungsten carbide (WC) layer that cover the sample surface. Lowering the ion beam carbon percentage was effective in a significant reduction in the thickness of the surface graphite layer. Under these conditions the W surface was also found to be immune for the fuzz formation. The effect of W fuzz prevention by the WC formation on the sample surface was more noticeable when the He ion beam had much lower carbon (C) ions content (0.01% C). In this case, the fuzz formation was prevented on the vast majority of the W sample surface, while W fuzz was found in limited and isolated areas. The W surface also shows good resistance to morphology evolution when bombarded by high flux of pure H ions at 900 °C.

Surface photovoltage spectroscopy applied to gallium arsenide surfaces

NASA Technical Reports Server (NTRS)

Bynik, C. E.

1975-01-01

The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed. The results suggest that in gallium arsenide the surface voltage may be due to deep bulk impurity acceptor states that are pinned at the Fermi level at the surface. Establishment of the validity of this model will indicate the direction to proceed to increase the efficiency of gallium arsenide solar cells.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

PubMed

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Performance Improvement of V-Fe-Cr-Ti Solid State Hydrogen Storage Materials in Impure Hydrogen Gas.

PubMed

Ulmer, Ulrich; Oertel, Daria; Diemant, Thomas; Bonatto Minella, Christian; Bergfeldt, Thomas; Dittmeyer, Roland; Behm, R Jürgen; Fichtner, Maximilian

2018-01-17

Two approaches of engineering surface structures of V-Ti-based solid solution hydrogen storage alloys are presented, which enable improved tolerance toward gaseous oxygen (O 2 ) impurities in hydrogen (H 2 ) gas. Surface modification is achieved through engineering lanthanum (La)- or nickel (Ni)-rich surface layers with enhanced cyclic stability in an H 2 /O 2 mixture. The formation of a Ni-rich surface layer does not improve the cycling stability in H 2 /O 2 mixtures. Mischmetal (Mm, a mixture of La and Ce) agglomerates are observed within the bulk and surface of the alloy when small amounts of this material are added during arc melting synthesis. These agglomerates provide hydrogen-transparent diffusion pathways into the bulk of the V-Ti-Cr-Fe hydrogen storage alloy when the remaining oxidized surface is already nontransparent for hydrogen. Thus, the cycling stability of the alloy is improved in an O 2 -containing hydrogen environment as compared to the same alloy without addition of Mm. The obtained surface-engineered storage material still absorbs hydrogen after 20 cycles in a hydrogen-oxygen mixture, while the original material is already deactivated after 4 cycles.

Dopant Adsorption and Incorporation at Irradiated GaN Surfaces

NASA Astrophysics Data System (ADS)

Sun, Qiang; Selloni, Annabella; Myers, Thomas; Doolittle, W. Alan

2006-03-01

Mg and O are two of the common dopants in GaN, but, in spite of extensive investigation, the atomic scale understanding of their adsorption and incorporation is still incomplete. In particular, high-energy electron irradiation, such as occurring during RHEED, has been reported to have an important effect on the incorporation of these impurities, but no study has addressed the detailed mechanisms of this effect yet. Here we use DFT calculations to study the adsorption and incorporation of Mg and O at the Ga- and N-polar GaN surfaces under various Ga, Mg and O coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find that the adsorption and incorporation of the two impurities have opposite surface polarity dependence: substitutional Mg prefers to incorporate at the GaN(0001) surface, while O prefers to adsorb and incorporate at the N-polar surface. In addition, our results indicate that in presence of light irradiation the tendency of Mg to surface-segregate is reduced. The O adsorption energy on the N-polar surface is also significantly reduced, consistent with the experimental observation of a much smaller concentration of oxygen in the irradiated samples.

High Surface-Enhanced Raman Scattering (SERS) Amplification Factor Obtained with Silver Printed Circuit Boards and the Influence of Phenolic Resins for the Characterization of the Pesticide Thiram.

PubMed

Silva de Almeida, Francylaine; Bussler, Larissa; Marcio Lima, Sandro; Fiorucci, Antonio Rogério; da Cunha Andrade, Luis Humberto

2016-07-01

In this work, low-cost substrates with rough silver surfaces were prepared from commercial copper foil-covered phenolic board (CPB) and an aqueous solution of AgNO3, and were used for surface-enhanced Raman scattering (SERS) and surface-enhanced resonance Raman scattering (SERRS) measurements. A maximum SERS amplification factor of 1.2 × 10(7) was obtained for Rhodamine 6G (R6G), and use of the CPB resulted in a detection limit for Thiram pesticide of 0.5 µmol L(-1) The minimum detection level was limited by residual traces of phenolic groups that originated from the substrate resin, which became solubilized in the aqueous Ag(+) solution. It was found that the bands corresponding to the impurities had less influence in the Thiram analysis, which could be explained by the high affinity of sulfur for Ag surfaces. The influence of impurities in the SERS analyses therefore depended on the linkage between the rough silver surface and the analyte. The findings demonstrated the ease and effectiveness of using CPB to prepare a nanostructured surface for SERS. © The Author(s) 2016.

Spin accumulation in disordered topological insulator ultrathin films

NASA Astrophysics Data System (ADS)

Siu, Zhuo Bin; Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.

2017-08-01

Topological insulator (TI) ultrathin films differ from the more commonly studied semi-infinite bulk TIs in that the former possess both top and bottom surfaces where the surface states localized at different surfaces can couple to one another across the finite thickness of the film. In the presence of an in-plane magnetization, the TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a Bi2Se3 TI thin film system with an in-plane magnetization and numerically calculate the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo formula calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization and in the out of plane direction are antisymmetric in Fermi energy around the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation.

Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org

2016-01-14

The effect of room temperature sulfur passivation of the surface of Ge{sub 0.83}Sn{sub 0.17} prior to high-k dielectric (HfO{sub 2}) deposition is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the chemical bonding at the interface of HfO{sub 2} and Ge{sub 0.83}Sn{sub 0.17}. Sulfur passivation is found to be effective in suppressing the formation of both Ge oxides and Sn oxides. A comparison of XPS results for sulfur-passivated and non-passivated Ge{sub 0.83}Sn{sub 0.17} samples shows that sulfur passivation of the GeSn surface could also suppress the surface segregation of Sn atoms. In addition, sulfur passivation reduces the interface trapmore » density D{sub it} at the high-k dielectric/Ge{sub 0.83}Sn{sub 0.17} interface from the valence band edge to the midgap of Ge{sub 0.83}Sn{sub 0.17}, as compared with a non-passivated control. The impact of the improved D{sub it} is demonstrated in Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs with sulfur passivation show improved subthreshold swing S, intrinsic transconductance G{sub m,int}, and effective hole mobility μ{sub eff} as compared with the non-passivated control. At a high inversion carrier density N{sub inv} of 1 × 10{sup 13 }cm{sup −2}, sulfur passivation increases μ{sub eff} by 25% in Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs.« less

Using Ozone To Clean and Passivate Oxygen-Handling Hardware

NASA Technical Reports Server (NTRS)

Torrance, Paul; Biesinger, Paul

2009-01-01

A proposed method of cleaning, passivating, and verifying the cleanliness of oxygen-handling hardware would extend the established art of cleaning by use of ozone. As used here, "cleaning" signifies ridding all exposed surfaces of combustible (in particular, carbon-based) contaminants. The method calls for exposing the surfaces of the hardware to ozone while monitoring the ozone effluent for carbon dioxide. The ozone would passivate the hardware while oxidizing carbon-based residues, converting the carbon in them to carbon dioxide. The exposure to ozone would be continued until no more carbon dioxide was detected, signifying that cleaning and passivation were complete.

Optimizing surface defects for atomic-scale electronics: Si dangling bonds

NASA Astrophysics Data System (ADS)

Scherpelz, Peter; Galli, Giulia

2017-07-01

Surface defects created and probed with scanning tunneling microscopes are a promising platform for atomic-scale electronics and quantum information technology applications. Using first-principles calculations we demonstrate how to engineer dangling bond (DB) defects on hydrogenated Si(100) surfaces, which give rise to isolated impurity states that can be used in atomic-scale devices. In particular, we show that sample thickness and biaxial strain can serve as control parameters to design the electronic properties of DB defects. While in thick Si samples the neutral DB state is resonant with bulk valence bands, ultrathin samples (1-2 nm) lead to an isolated impurity state in the gap; similar behavior is seen for DB pairs and DB wires. Strain further isolates the DB from the valence band, with the response to strain heavily dependent on sample thickness. These findings suggest new methods for tuning the properties of defects on surfaces for electronic and quantum information applications. Finally, we present a consistent and unifying interpretation of many results presented in the literature for DB defects on hydrogenated silicon surfaces, rationalizing apparent discrepancies between different experiments and simulations.

Experimental and Computational Evidence of Highly Active Fe Impurity Sites on the Surface of Oxidized Au for the Electrocatalytic Oxidation of Water in Basic Media

DOE PAGES

Klaus, Shannon; Trotochaud, Lena; Cheng, Mu-Jeng; ...

2015-10-22

Addition of Fe to Ni- and Co-based (oxy)hydroxides has been shown to enhance the activity of these materials for electrochemical oxygen evolution. Here we show that Fe cations bound to the surface of oxidized Au exhibit enhanced oxygen evolution reaction (OER) activity. We find that the OER activity increases with increasing surface concentration of Fe. Density functional theory analysis of the OER energetics reveals that oxygen evolution over Fe cations bound to a hydroxyl-terminated oxidized Au (Fe-Au 2O 3) occurs at an overpotential ~0.3V lower than over hydroxylated Au 2O 3 (0.82V). This finding agrees well with experimental observations andmore » is a consequence of the more optimal binding energetics of OER reaction intermediates at Fe cations bound to the surface of Au 2O 3. These findings suggest that the enhanced OER activity reported recently upon low-potential cycling of Au may be due to surface Fe impurities rather than to "superactive" Au(III) surfaquo species.« less

Passivation of surface states of α-Fe2O3(0001) surface by deposition of Ga2O3 overlayers: A density functional theory study.

PubMed

Ulman, Kanchan; Nguyen, Manh-Thuong; Seriani, Nicola; Gebauer, Ralph

2016-03-07

There is a big debate in the community regarding the role of surface states of hematite in the photoelectrochemical water splitting. Experimental studies on non-catalytic overlayers passivating the hematite surface states claim a favorable reduction in the overpotential for the water splitting reaction. As a first step towards understanding the effect of these overlayers, we have studied the system Ga2O3 overlayers on hematite (0001) surfaces using first principles computations in the PBE+U framework. Our computations suggest that stoichiometric terminations of Ga2O3 overlayers are energetically more favored than the bare surface, at ambient oxygen chemical potentials. Energetics suggest that the overlayers prefer to grow via a layer-plus-island (Stranski-Krastanov) growth mode with a critical layer thickness of 1-2 layers. Thus, a complete wetting of the hematite surface by an overlayer of gallium oxide is thermodynamically favored. We establish that the effect of deposition of the Ga2O3 overlayers on the bare hematite surface is to passivate the surface states for the stoichiometric termination. For the oxygen terminated surface which is the most stable termination under photoelectrochemical conditions, the effect of deposition of the Ga2O3 overlayer is to passivate the hole-trapping surface state.

Passivation effect of Cl, F and H atoms on CuIn0.75Ga0.25Se2 (1 1 2) surface

NASA Astrophysics Data System (ADS)

Qi, Rong-fei; Wang, Zhao-hui; Tang, Fu-ling; Agbonkina, Itohan C.; Xue, Hong-tao; Si, Feng-juan; Ma, Sheng-ling; Wang, Xiao-ka

2018-06-01

Using the first-principles calculations within the density functional-theory (DFT) framework, we theoretically investigated the surface reconstruction, surface states near the Fermi level and their passivation on CuIn0.75Ga0.25Se2 (1 1 2) (CIGS) surface by chlorine, fluorine and hydrogen. Surface reconstruction appears on CIG-terminated CIGS (1 1 2) surface and it is a self-passivation. For the locations of Cl, F and H atoms adsorbing on Se-terminated CIGS (1 1 2) surface, four high symmetry adsorption sites: top sites, bridge sites, hexagonal close-packed (hcp) sites and faced centered cubic (fcc) sites were studied respectively. With the coverage of 0.5 monolayer (ML), Cl, F and H adatoms energetically occupy the top sites on the CIGS (112) surface. The corresponding adsorption energies were -2.20 eV, -3.29 eV, -2.60 eV, respectively. The bond length and electronic properties were analyzed. We found that the surface state density near the Fermi level was markedly diminished for 0.5 ML Cl, F and H adsorption on Se-terminated CIGS (1 1 2) surface at top sites. It was also found that H can more efficiently passivate the surface state density than Cl and F atoms, and the effect of adsorption of Cl atoms is better than that of F.

A quasi-global approach to improve day-time satellite surface soil moisture anomalies through land surface temperature input

USDA-ARS?s Scientific Manuscript database

Passive microwave observations from various space borne sensors have been linked to soil moisture of the Earth’s surface layer. The new generation passive microwave sensors are dedicated to retrieving this variable and make observations in the single, theoretically optimal L-band frequency (1-2 GHz)...

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, H. C.; Oh, J.; Zhang, Y.

2012-06-01

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements.more » Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.« less

Long term stability of c-Si surface passivation using corona charged SiO2

NASA Astrophysics Data System (ADS)

Bonilla, Ruy S.; Reichel, Christian; Hermle, Martin; Hamer, Phillip; Wilshaw, Peter R.

2017-08-01

Recombination at the semiconductor surface continues to be a major limit to optoelectronic device performance, in particular for solar cells. Passivation films reduce surface recombination by a combination of chemical and electric field effect components. Dielectric films used for this purpose, however, must also accomplish optical functions at the cell surface. In this paper, corona charge is seen as a potential method to enhance the passivation properties of a dielectric film while maintaining its optical characteristics. It is observed that corona charge can produce extreme reductions in surface recombination via field effect, in the best case leading to lifetimes exceeding 5 ms at an injection of 1015 cm-3. For a 200 μm n-type 1 Ω cm c-Si wafer, this equates to surface recombination velocities below 0.65 cm/s and J0e values of 0.92 fA/cm2. The average improvement in passivation after corona charging gave lifetimes of 1-3 ms. This was stabilised for a period of 3 years by chemically treating the films to prevent water absorption. Surface recombination was kept below 7 cm/s, and J0e < 16.28 fA/cm2 for 3 years, with a decay time constant of 8.7 years. Simulations of back-contacted n-type cells show that front surface recombination represents less than 2% of the total internally generated power in the cell (the loss in power output) when the passivation is kept better than 16 fA/cm2, and as high as 10% if front recombination is worse than 100 fA/cm2.

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

The effects of parametric changes in electropolishing process on surface properties of 316L stainless steel

NASA Astrophysics Data System (ADS)

ur Rahman, Zia; Deen, K. M.; Cano, Lawrence; Haider, Waseem

2017-07-01

Corrosion resistance and biocompatibility of 316L stainless steel implants depend on the surface features and the nature of the passive film. The influence of electropolishing on the surface topography, surface free energy and surface chemistry was determined by atomic force microscopy, contact angle meter and X-ray photoelectron spectroscopy, respectively. The electropolishing of 316L stainless steel was conducted at the oxygen evolution potential (EPO) and below the oxygen evolution potential (EPBO). Compared to mechanically polished (MP) and EPO, the EPBO sample depicted lower surface roughness (Ra = 6.07 nm) and smaller surface free energy (44.21 mJ/m2). The relatively lower corrosion rate (0.484 mpy) and smaller passive current density (0.619 μA/cm2) as determined from cyclic polarization scans was found to be related with the presence of OH, Cr(III), Fe(0), Fe(II) and Fe(III) species at the surface. These species assured the existence of relatively uniform passive oxide film over EPBO surface. Moreover, the relatively large charge transfer (Rct) and passive film resistance (Rf) registered by EPBO sample from impedance spectroscopy analysis confirmed its better electrochemical performance. The in vitro response of these polished samples toward MC3T3 pre-osteoblast cell proliferation was determined to be directly related with their surface and electrochemical properties.

Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel

PubMed Central

Kim, Ki-Tae; Lee, Jung-Hee; Kim, Young-Sik

2017-01-01

Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation behavior of 316L stainless steel. In the case of slightly sensitized 316L stainless steel, increasing the aging time drastically decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film, even though aging did not form chromium carbide and a chromium depletion zone. This behavior is due to the micro-galvanic corrosion between the matrix and carbon segregated area, and this shows the importance of carbon segregation in grain boundaries to the pitting corrosion resistance of stainless steel, in addition to the formation of the chromium depletion zone. UNSM (Ultrasonic Nano Crystal Surface Modification)-treatment to the slightly sensitized 316L stainless steel increased the pitting potential, decreased the passive current density, and increased the resistance of the passive film. However, in the case of heavily sensitized 316L stainless steel, UNSM-treatment decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film. This behavior is due to the dual effects of the UNSM-treatment. That is, the UNSM-treatment reduced the carbon segregation, regardless of whether the stainless steel 316L was slightly or heavily sensitized. However, since this treatment made mechanical flaws in the outer surface in the case of the heavily sensitized stainless steel, UNSM-treatment may eliminate chromium carbide, and this flaw can be a pitting initiation site, and therefore decrease the pitting corrosion resistance. PMID:28773067

Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel.

PubMed

Kim, Ki-Tae; Lee, Jung-Hee; Kim, Young-Sik

2017-06-27

Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation behavior of 316L stainless steel. In the case of slightly sensitized 316L stainless steel, increasing the aging time drastically decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film, even though aging did not form chromium carbide and a chromium depletion zone. This behavior is due to the micro-galvanic corrosion between the matrix and carbon segregated area, and this shows the importance of carbon segregation in grain boundaries to the pitting corrosion resistance of stainless steel, in addition to the formation of the chromium depletion zone. UNSM (Ultrasonic Nano Crystal Surface Modification)-treatment to the slightly sensitized 316L stainless steel increased the pitting potential, decreased the passive current density, and increased the resistance of the passive film. However, in the case of heavily sensitized 316L stainless steel, UNSM-treatment decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film. This behavior is due to the dual effects of the UNSM-treatment. That is, the UNSM-treatment reduced the carbon segregation, regardless of whether the stainless steel 316L was slightly or heavily sensitized. However, since this treatment made mechanical flaws in the outer surface in the case of the heavily sensitized stainless steel, UNSM-treatment may eliminate chromium carbide, and this flaw can be a pitting initiation site, and therefore decrease the pitting corrosion resistance.

Controlling adsorption and passivation properties of bovine serum albumin on silica surfaces by ionic strength modulation and cross-linking.

PubMed

Park, Jae Hyeon; Sut, Tun Naw; Jackman, Joshua A; Ferhan, Abdul Rahim; Yoon, Bo Kyeong; Cho, Nam-Joon

2017-03-29

Understanding the physicochemical factors that influence protein adsorption onto solid supports holds wide relevance for fundamental insights into protein structure and function as well as for applications such as surface passivation. Ionic strength is a key parameter that influences protein adsorption, although how its modulation might be utilized to prepare well-coated protein adlayers remains to be explored. Herein, we investigated how ionic strength can be utilized to control the adsorption and passivation properties of bovine serum albumin (BSA) on silica surfaces. As protein stability in solution can influence adsorption kinetics, the size distribution and secondary structure of proteins in solution were first characterized by dynamic light scattering (DLS), nanoparticle tracking analysis (NTA), and circular dichroism (CD) spectroscopy. A non-monotonic correlation between ionic strength and protein aggregation was observed and attributed to colloidal agglomeration, while the primarily α-helical character of the protein in solution was maintained in all cases. Quartz crystal microbalance-dissipation (QCM-D) experiments were then conducted in order to track protein adsorption onto silica surfaces as a function of ionic strength, and the measurement responses indicated that total protein uptake at saturation coverage is lower with increasing ionic strength. In turn, the QCM-D data and the corresponding Voigt-Voinova model analysis support that the surface area per bound protein molecule is greater with increasing ionic strength. While higher protein uptake under lower ionic strengths by itself did not result in greater surface passivation under subsequent physiologically relevant conditions, the treatment of adsorbed protein layers with a gluteraldehyde cross-linking agent stabilized the bound protein in this case and significantly improved surface passivation. Collectively, our findings demonstrate that ionic strength modulation influences BSA adsorption uptake on account of protein spreading and can be utilized in conjunction with covalent cross-linking strategies to prepare well-coated protein adlayers for improved surface passivation.

Fogging technique used to coat magnesium with plastic

NASA Technical Reports Server (NTRS)

Mroz, T. S.

1967-01-01

Cleaning process and a fogging technique facilitate the application of a plastic coating to magnesium plates. The cleaning process removes general organic and inorganic surface impurities, oils and greases, and oxides and carbonates from the magnesium surfaces. The fogging technique produces a thin-filmlike coating in a clean room atmosphere.

The Influence of Impurities and Metallic Capping Layers on the Microstructure of Copper Interconnects

NASA Astrophysics Data System (ADS)

Rizzolo, Michael

As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed. Recent advances in analytical techniques, however, have enabled this work to quantify impurity content, location, and diffusion in relation to microstructural changes in electroplated copper. Surface segregation of impurities during the initial burst of grain growth was investigated. After no surface segregation was observed, a microfluidic plating cell was constructed to plate multilayer films with regions of intentionally high and low impurity concentrations to determine if grain growth could be pinned by the presence of impurities; it was not. An alternate mechanism for grain boundary pinning based on the texture of the seed layer is proposed, supported by time-resolved transmission electron microscopy and transmission electron backscatter diffraction data. The suggested model posits that the seed in narrow features has no preferred orientation, which results in rapid nucleation of subsurface grains in trench regions prior to recrystallization from the overburden down. These rapidly growing grains are able to block off several trenches from the larger overburden grains, inhibiting grain growth in narrow features. With this knowledge in hand, metallic capping layers were employed to address the problematic microstructure in 70nm lines. The capping layers (chromium, nickel, zinc, and tin) were plated on the copper overburden prior to annealing to manipulate the stress gradient and microstructural development during annealing. It appeared that regardless of as-plated stress, nickel capping altered the recrystallized texture of the copper over patterned features. The nickel capping also caused a 2x increase in the number of advantageous 'bamboo' grains that span the entire trench, which effectively block electromigration pathways. These data provides a more fundamental understanding of manipulating the microstructure in copper interconnects using pre-anneal capping layers, and demonstrates a strategy to improve the microstructure beyond the capabilities of simple annealing.

Screening of charged impurities as a possible mechanism for conductance change in graphene gas sensing

NASA Astrophysics Data System (ADS)

Liang, Sang-Zi; Chen, Gugang; Harutyunyan, Avetik R.; Sofo, Jorge O.

2014-09-01

In carbon nanotube and graphene gas sensing, the measured conductance change after the sensor is exposed to target molecules has been traditionally attributed to carrier density change due to charge transfer between the sample and the adsorbed molecule. However, this explanation has many problems when it is applied to graphene: The increased amount of Coulomb impurities should lead to decrease in carrier mobility which was not observed in many experiments, carrier density is controlled by the gate voltage in the experimental setup, and there are inconsistencies in the energetics of the charge transfer. In this paper we explore an alternative mechanism. Charged functional groups and dipolar molecules on the surface of graphene may counteract the effect of charged impurities on the substrate. Because scattering of electrons with these charged impurities has been shown to be the limiting factor in graphene conductivity, this leads to significant changes in the transport behavior. A model for the conductivity is established using the random phase approximation dielectric function of graphene and the first-order Born approximation for scattering. The model predicts optimal magnitudes for the charge and dipole moment which maximally screen a given charged impurity. The dipole screening is shown to be generally weaker than the charge screening although the former becomes more effective with higher gate voltage away from the charge neutrality point. The model also predicts that with increasing amount of adsorbates, the charge impurities eventually become saturated and additional adsorption always lead to decreasing conductivity.

Mechanisms of Ocean Heat Uptake

NASA Astrophysics Data System (ADS)

Garuba, Oluwayemi

An important parameter for the climate response to increased greenhouse gases or other radiative forcing is the speed at which heat anomalies propagate downward in the ocean. Ocean heat uptake occurs through passive advection/diffusion of surface heat anomalies and through the redistribution of existing temperature gradients due to circulation changes. Atlantic meridional overturning circulation (AMOC) weakens in a warming climate and this should slow the downward heat advection (compared to a case in which the circulation is unchanged). However, weakening AMOC also causes a deep warming through the redistributive effect, thus increasing the downward rate of heat propagation compared to unchanging circulation. Total heat uptake depends on the combined effect of these two mechanisms. Passive tracers in a perturbed CO2 quadrupling experiments are used to investigate the effect of passive advection and redistribution of temperature anomalies. A new passive tracer formulation is used to separate ocean heat uptake into contributions due to redistribution and passive advection-diffusion of surface heating during an ocean model experiment with abrupt increase in surface temperature. The spatial pattern and mechanisms of each component are examined. With further experiments, the effects of surface wind, salinity and temperature changes in changing circulation and the resulting effect on redistribution in the individual basins are isolated. Analysis of the passive advection and propagation path of the tracer show that the Southern ocean dominates heat uptake, largely through vertical and horizontal diffusion. Vertical diffusion transports the tracer across isopycnals down to about 1000m in 100 years in the Southern ocean. Advection is more important in the subtropical cells and in the Atlantic high latitudes, both with a short time scale of about 20 years. The shallow subtropical cells transport the tracer down to about 500m along isopycnal surfaces, below this vertical diffusion takes over transport in the tropics; in the Atlantic, the MOC transports heat as deep 2000m in about 30 years. Redistributive surface heat uptake alters the total amount surface heat uptake among the basins. Compared to the passive-only heat uptake, which is about the same among the basins, redistribution nearly doubles the surface heat input into the Atlantic but makes smaller increases in the Indian and Pacific oceans for a net global increase of about 25%, in the perturbation experiment with winds unchanged. The passive and redistributive heat uptake components are further distributed among the basins through the global conveyor belt. The Pacific gains twice the surface heat input into it through lateral transport from the other two basins, as a result, the Atlantic and Pacific gain similar amounts of heat even though surface heat input is in the Atlantic is much bigger. Of this heat transport, most of the passive component comes from the Indian and the redistributive component comes from the Atlantic. Different surface forcing perturbation gives different circulation change pattern and as a result yield different redistributive uptake. Ocean heat uptake is more sensitive to wind forcing perturbation than to thermohaline forcing perturbation. About 2% reduction in subtropical cells transport and southern ocean transport, in the wind-change perturbation experiment, resulted in about 10% reduction in the global ocean heat uptake of wind-unchanged experiment. The AMOC weakened by about 35% and resulted in a 25% increase in passive heat uptake in the wind-unchanged experiment. Surface winds weakening reduces heat uptake by warming the reservoir surface temperatures, while MOC weakening increases heat input by a cooling reservoir surface temperatures. Thermohaline forcing perturbation is combination of salinity and temperature perturbations, both weaken the AMOC, however, they have opposite redistributive effects. Ocean surface freshening gives positive redistributive effect, while surface temperature increase gives negative redistributive effect on heat uptake. The salinity effect dominates the redistributive effect for thermohaline perturbation.

Global modelling of plasma-wall interaction in reversed field pinches

NASA Astrophysics Data System (ADS)

Bagatin, M.; Costa, S.; Ortolani, S.

1989-04-01

The impurity production and deuterium recycling mechanisms in ETA—BETA II and RFX are firstly discussed by means of a simple model applicable to a stationary plasma interacting with the wall. This gives the time constant and the saturation values of the impurity concentration as a function of the boundary temperature and density. If the latter is sufficiently high, the impurity buildup in the main plasma becomes to some extent stabilized by the shielding effect of the edge. A self-consistent global model of the time evolution of an RFP plasma interacting with the wall is then described. The bulk and edge parameters are derived by solving the energy and particle balance equations incorporating some of the basic plasma-surface processes, such as sputtering, backscattering and desorption. The application of the model to ETA-BETA II confirms the impurity concentrations of the light and metal impurities as well as the time evolution of the average electron density found experimentally under different conditions. The model is then applied to RFX, a larger RFP experiment under construction, whose wall will be protected by a full graphite armour. The time evolution of the discharge shows that carbon sputtering could increase Zeff to ~ 4, but without affecting significantly the plasma performance.

Utilization of Photochemically Induced Fluorescence Detection for HPLC Determination of Genotoxic Impurities in the Vortioxetine Manufacturing Process.

PubMed

Douša, Michal; Doubský, Jan; Srbek, Jan

2016-07-01

An analytical reversed-phase high-performance liquid chromatography (HPLC) method for the detection and quantitative determination of two genotoxic impurities at ppm level present in the vortioxetine manufacturing process is described. Applying the concept of threshold of toxicological concern, a limit of 75 ppm each for both genotoxic impurities was calculated based on the maximum daily dose of active pharmaceutical ingredients. The novel reversed-phase HPLC method with photochemically induced fluorescence detection was developed on XSELECT Charged Surface Hybrid Phenyl-Hexyl column using the mobile phase consisted a mixture of 10 mM ammonium formate pH 3.0 and acetonitrile. The elution was performed using an isocratic composition of 48:52 (v/v) at a flow rate of 1.0 mL/min. The photochemically induced fluorescence detection is based on the use of UV irradiation at 254 nm through measuring the fluorescence intensity at 300 nm and an excitation wavelength of 272 nm to produce fluorescent derivatives of both genotoxic impurities. The online photochemical conversion and detection is easily accomplished for two expected genotoxic impurities and provides a sufficiently low limit detection and quantification for the target analysis. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Group III impurities Si interstitials interaction caused by ion irradiation

NASA Astrophysics Data System (ADS)

Romano, L.; Piro, A. M.; De Bastiani, R.; Grimaldi, M. G.; Rimini, E.

2006-01-01

The off-lattice displacement of substitutional impurities (B, Ga) in Si caused by irradiation with energetic light ion beams has been investigated. Samples have been prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 × 1020 at/cm3 confined in a 300 nm thick surface region. The off-lattice displacement of the impurities was induced at room temperature (RT) by irradiation with high energy (>600 keV) light ion beams (H, He) and detected by the channelling technique along different axes, using the 11B(p,α)8Be reaction and standard RBS, for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation, until it saturates at χF < 1 suggesting a non-random displacement of the dopant. Although the precise value of χF depends on the channelling direction and dopant species, the off-lattice displacement rate, deduced from the χ versus interstitial fluence curve, only depends on the excess of Si self-interstitials (SiI) generated by the irradiating beam through a parameter σ that can be interpreted as an effective cross-section for the impurity-SiI interaction.

Robust passive dynamics of the musculoskeletal system compensate for unexpected surface changes during human hopping

PubMed Central

van der Krogt, Marjolein M.; de Graaf, Wendy W.; Farley, Claire T.; Moritz, Chet T.; Richard Casius, L. J.; Bobbert, Maarten F.

2009-01-01

When human hoppers are surprised by a change in surface stiffness, they adapt almost instantly by changing leg stiffness, implying that neural feedback is not necessary. The goal of this simulation study was first to investigate whether leg stiffness can change without neural control adjustment when landing on an unexpected hard or unexpected compliant (soft) surface, and second to determine what underlying mechanisms are responsible for this change in leg stiffness. The muscle stimulation pattern of a forward dynamic musculoskeletal model was optimized to make the model match experimental hopping kinematics on hard and soft surfaces. Next, only surface stiffness was changed to determine how the mechanical interaction of the musculoskeletal model with the unexpected surface affected leg stiffness. It was found that leg stiffness adapted passively to both unexpected surfaces. On the unexpected hard surface, leg stiffness was lower than on the soft surface, resulting in close-to-normal center of mass displacement. This reduction in leg stiffness was a result of reduced joint stiffness caused by lower effective muscle stiffness. Faster flexion of the joints due to the interaction with the hard surface led to larger changes in muscle length, while the prescribed increase in active state and resulting muscle force remained nearly constant in time. Opposite effects were found on the unexpected soft surface, demonstrating the bidirectional stabilizing properties of passive dynamics. These passive adaptations to unexpected surfaces may be critical when negotiating disturbances during locomotion across variable terrain. PMID:19589956

A comparison between active and passive sensing of soil moisture from vegetated terrains

NASA Technical Reports Server (NTRS)

Fung, A. K.; Eom, H. J.

1985-01-01

A comparison between active and passive sensing of soil moisture over vegetated areas is studied via scattering models. In active sensing three contributing terms to radar backscattering can be identified: (1) the ground surface scatter term; (2) the volume scatter term representing scattering from the vegetation layer; and (3) the surface volume scatter term accounting for scattering from both surface and volume. In emission three sources of contribution can also be identified: (1) surface emission; (2) upward volume emission from the vegetation layer; and (3) downward volume emission scattered upward by the ground surface. As ground moisture increases, terms (1) and (3) increase due to increase in permittivity in the active case. However, in passive sensing, term (1) decreases but term (3) increases for the same reason. This self compensating effect produces a loss in sensitivity to change in ground moisture. Furthermore, emission from vegetation may be larger than that from the ground. Hence, the presence of vegetation layer causes a much greater loss of sensitivity to passive than active sensing of soil moisture.

A comparison between active and passive sensing of soil moisture from vegetated terrains

NASA Technical Reports Server (NTRS)

Fung, A. K.; Eom, H. J.

1984-01-01

A comparison between active and passive sensing of soil moisture over vegetated areas is studied via scattering models. In active sensing three contributing terms to radar backscattering can be identified: (1) the ground surface scatter term; (2) the volume scatter term representing scattering from the vegetation layer; and (3) the surface volume scatter term accounting for scattering from both surface and volume. In emission three sources of contribution can also be identified: (1) surface emission; (2) upward volume emission from the vegetation layer; and (3) downward volume emission scattered upward by the ground surface. As ground moisture increases, terms (1) and (3) increase due to increase in permittivity in the active case. However, in passive sensing, term (1) decreases but term (3) increases for the same reason. This self conpensating effect produces a loss in sensitivity to change in ground moisture. Furthermore, emission from vegetation may be larger than that from the ground. Hence, the presence of vegetation layer causes a much greater loss of sensitivity to passive than active sensing of soil moisture.

Noise suppression in surface microseismic data

USGS Publications Warehouse

Forghani-Arani, Farnoush; Batzle, Mike; Behura, Jyoti; Willis, Mark; Haines, Seth S.; Davidson, Michael

2012-01-01

We introduce a passive noise suppression technique, based on the τ − p transform. In the τ − p domain, one can separate microseismic events from surface noise based on distinct characteristics that are not visible in the time-offset domain. By applying the inverse τ − p transform to the separated microseismic event, we suppress the surface noise in the data. Our technique significantly improves the signal-to-noise ratios of the microseismic events and is superior to existing techniques for passive noise suppression in the sense that it preserves the waveform. We introduce a passive noise suppression technique, based on the τ − p transform. In the τ − p domain, one can separate microseismic events from surface noise based on distinct characteristics that are not visible in the time-offset domain. By applying the inverse τ − p transform to the separated microseismic event, we suppress the surface noise in the data. Our technique significantly improves the signal-to-noise ratios of the microseismic events and is superior to existing techniques for passive noise suppression in the sense that it preserves the waveform.

Toxicity Assessment of Silica Coated Iron Oxide Nanoparticles and Biocompatibility Improvement by Surface Engineering

PubMed Central

Malvindi, Maria Ada; De Matteis, Valeria; Galeone, Antonio; Brunetti, Virgilio; Anyfantis, George C.; Athanassiou, Athanassia; Cingolani, Roberto; Pompa, Pier Paolo

2014-01-01

We have studied in vitro toxicity of iron oxide nanoparticles (NPs) coated with a thin silica shell (Fe3O4/SiO2 NPs) on A549 and HeLa cells. We compared bare and surface passivated Fe3O4/SiO2 NPs to evaluate the effects of the coating on the particle stability and toxicity. NPs cytotoxicity was investigated by cell viability, membrane integrity, mitochondrial membrane potential (MMP), reactive oxygen species (ROS) assays, and their genotoxicity by comet assay. Our results show that NPs surface passivation reduces the oxidative stress and alteration of iron homeostasis and, consequently, the overall toxicity, despite bare and passivated NPs show similar cell internalization efficiency. We found that the higher toxicity of bare NPs is due to their stronger in-situ degradation, with larger intracellular release of iron ions, as compared to surface passivated NPs. Our results indicate that surface engineering of Fe3O4/SiO2 NPs plays a key role in improving particles stability in biological environments reducing both cytotoxic and genotoxic effects. PMID:24465736

Study of surface passivation as a function of InP closed-ampoule solar cell fabrication processing variables

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Jenkins, Phillip; Goradia, Manju; Goradia, Chandra; Bailey, Sheila; Weinberg, Irving; Jayne, Douglas

1990-01-01

The effects of various surface preparation procedures, including chemical treatment and anodic or chemical oxidation, closed-ampoule diffusion conditions, and post-diffusion surface preparation and annealing conditions, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of n(+)p InP solar cells made by closed-ampoule diffusion of sulfur into p-type InP. The InP substrates used were p-type Cd-doped to a level of 1.7 x 10 to the 16th/cu cm, Zn-doped to levels of 2.2 x 10 to the 16th and 1.2 x 10 to the 18th/cu cm, and n-type S-doped to 4.4 x 10 to the 18th/cu cm. The passivating properties have been evaluated from photoluminescence (PL) and conductance-voltage (G-V) data. Good agreement was found between the level of surface passivation and the composition of different surface layers as revealed by X-ray photoelectron spectroscopy (XPS) analysis.

Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

PubMed

Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

2015-06-03

Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new approach to design safe CNTs with an understanding of redox potential.

PubMed

Tsuruoka, Shuji; Cassee, Flemming R; Castranova, Vincent

2013-09-02

Carbon nanotubes (CNTs) are being increasingly industrialized and applied for various products. As of today, although several toxicological evaluations of CNTs have been conducted, designing safer CNTs is not practiced because reaction kinetics of CNTs with bioactive species is not fully understood. The authors propose a kinetic mechanism to establish designing safe CNTs as a new goal. According to a literature search on the behavior of CNTs and the effects of impurities, it is found that chemical reactions on CNT surface are attributed to redox reactions involving metal impurities and carbon structures at the CNT surface. A new goal is proposed to design safer CNTs using the redox potential hypothesis. The value of this hypothesis must be practically investigated and proven through the further experiments.

Effects of disordered Ru substitution in BaFe2As2: possible realization of superdiffusion in real materials.

PubMed

Wang, Limin; Berlijn, Tom; Wang, Yan; Lin, Chia-Hui; Hirschfeld, P J; Ku, Wei

2013-01-18

An unexpected insensitivity of the Fermi surface to impurity scattering is found in Ru substituted BaFe(2)As(2) from first-principles theory, offering a natural explanation of the unusual resilience of transport and superconductivity to a high level of disordered substitution in this material. This robustness is shown to originate from a coherent interference of correlated on-site and intersite impurity scattering, similar in spirit to the microscopic mechanism of superdiffusion in one dimension. Our result also demonstrates a strong substitution dependence of the Fermi surface and carrier concentration and provides a resolution to current discrepancies in recent photoelectron spectroscopy. These effects offer a natural explanation of the diminishing long-range magnetic, orbital, and superconducting orders with high substitution.

Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

NASA Astrophysics Data System (ADS)

Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

2017-01-01

This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

Effect of biogenic fermentation impurities on lactic acid hydrogenation to propylene glycol.

PubMed

Zhang, Zhigang; Jackson, James E; Miller, Dennis J

2008-09-01

The effect of residual impurities from glucose fermentation to lactic acid (LA) on subsequent ruthenium-catalyzed hydrogenation of LA to propylene glycol (PG) is examined. Whereas refined LA feed exhibits stable conversion to PG over carbon-supported ruthenium catalyst in a trickle bed reactor, partially refined LA from fermentation shows a steep decline in PG production over short (<40 h) reaction times followed by a further slow decay in performance. Addition of model impurities to refined LA has varying effects: organic acids, sugars, or inorganic salts have little effect on conversion; alanine, a model amino acid, results in a strong but reversible decline in conversion via competitive adsorption between alanine and LA on the Ru surface. The sulfur-containing amino acids cysteine and methionine irreversibly poison the catalyst for LA conversion. Addition of 0.1 wt% albumin as a model protein leads to slow decline in rate, consistent with pore plugging or combined pore plugging and poisoning of the Ru surface. This study points to the need for integrated design and operation of biological processes and chemical processes in the biorefinery in order to make efficient conversion schemes viable.

Transport properties of C and O in UN fuels

NASA Astrophysics Data System (ADS)

Schuler, Thomas; Lopes, Denise Adorno; Claisse, Antoine; Olsson, Pär

2017-03-01

Uranium nitride fuel is considered for fast reactors (GEN-IV generation and space reactors) and for light water reactors as a high-density fuel option. Despite this large interest, there is a lack of information about its behavior for in-pile and out-of-pile conditions. From the present literature, it is known that C and O impurities have significant influence on the fuel performance. Here we perform a systematic study of these impurities in the UN matrix using electronic-structure calculations of solute-defect interactions and microscopic jump frequencies. These quantities were calculated in the DFT +U approximation combined with the occupation matrix control scheme, to avoid convergence to metastable states for the 5 f levels. The transport coefficients of the system were evaluated with the self-consistent mean-field theory. It is demonstrated that carbon and oxygen impurities have different diffusion properties in the UN matrix, with O atoms having a higher mobility, and C atoms showing a strong flux coupling anisotropy. The kinetic interplay between solutes and vacancies is expected to be the main cause for surface segregation, as incorporation energies show no strong thermodynamic segregation preference for (001) surfaces compared with the bulk.

Assimilation of Passive and Active Microwave Soil Moisture Retrievals

NASA Technical Reports Server (NTRS)

Draper, C. S.; Reichle, R. H.; DeLannoy, G. J. M.; Liu, Q.

2012-01-01

Root-zone soil moisture is an important control over the partition of land surface energy and moisture, and the assimilation of remotely sensed near-surface soil moisture has been shown to improve model profile soil moisture [1]. To date, efforts to assimilate remotely sensed near-surface soil moisture at large scales have focused on soil moisture derived from the passive microwave Advanced Microwave Scanning Radiometer (AMSR-E) and the active Advanced Scatterometer (ASCAT; together with its predecessor on the European Remote Sensing satellites (ERS. The assimilation of passive and active microwave soil moisture observations has not yet been directly compared, and so this study compares the impact of assimilating ASCAT and AMSR-E soil moisture data, both separately and together. Since the soil moisture retrieval skill from active and passive microwave data is thought to differ according to surface characteristics [2], the impact of each assimilation on the model soil moisture skill is assessed according to land cover type, by comparison to in situ soil moisture observations.

Dual Electrolytic Plasma Processing for Steel Surface Cleaning and Passivation

NASA Astrophysics Data System (ADS)

Yang, L.; Zhang, P.; Shi, J.; Liang, J.; Tian, W. B.; Zhang, Y. M.; Sun, Z. M.

2017-10-01

To remove the rust on rebars and passivate the fresh surfaces, electrodes reversing electrolytic plasma processing (EPP) was proposed and conducted in a 10 wt.% Na2CO3 aqueous solution. The morphology and the composition of the surface were investigated by SEM and XPS. Experimental results show that the rust on the surface was removed effectively by cathode EPP, and a passive film containing Cr2O3 was achieved by the succeeding anode EPP treatment, by a simple operation of reversing the bias. The corrosion resistance was evaluated in a 3.5 wt.% NaCl aqueous solution using an electrochemical workstation. In comparison, the corrosion resistance was improved by the succeeding anode EPP treatment, which is evidenced by a positive shift of the open-circuit potential, an increase in the electrochemical impedance representing the inner layer by 76.8% and the decrease in the corrosion current density by 49.6%. This is an effective and environment-friendly technique to clean and passivate rebars and similar steel materials.

Quantum transport modelling of silicon nanobeams using heterogeneous computing scheme

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harb, M., E-mail: harbm@physics.mcgill.ca; Michaud-Rioux, V., E-mail: vincentm@physics.mcgill.ca; Guo, H., E-mail: guo@physics.mcgill.ca

We report the development of a powerful method for quantum transport calculations of nanowire/nanobeam structures with large cross sectional area. Our approach to quantum transport is based on Green's functions and tight-binding potentials. A linear algebraic formulation allows us to harness the massively parallel nature of Graphics Processing Units (GPUs) and our implementation is based on a heterogeneous parallel computing scheme with traditional processors and GPUs working together. Using our software tool, the electronic and quantum transport properties of silicon nanobeams with a realistic cross sectional area of ∼22.7 nm{sup 2} and a length of ∼81.5 nm—comprising 105 000 Si atoms and 24 000more » passivating H atoms in the scattering region—are investigated. The method also allows us to perform significant averaging over impurity configurations—all possible configurations were considered in the case of single impurities. Finally, the effect of the position and number of vacancy defects on the transport properties was considered. It is found that the configurations with the vacancies lying closer to the local density of states (LDOS) maxima have lower transmission functions than the configurations with the vacancies located at LDOS minima or far away from LDOS maxima, suggesting both a qualitative method to tune or estimate optimal impurity configurations as well as a physical picture that accounts for device variability. Finally, we provide performance benchmarks for structures as large as ∼42.5 nm{sup 2} cross section and ∼81.5 nm length.« less

Enhanced Passive Cooling for Waterless-Power Production Technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodriguez, Salvador B.

2016-06-14

Recent advances in the literature and at SNL indicate the strong potential for passive, specialized surfaces to significantly enhance power production output. Our exploratory computational and experimental research indicates that fractal and swirl surfaces can help enable waterless-power production by increasing the amount of heat transfer and turbulence, when compared with conventional surfaces. Small modular reactors, advanced reactors, and non-nuclear plants (e.g., solar and coal) are ideally suited for sCO2 coolant loops. The sCO2 loop converts the thermal heat into electricity, while the specialized surfaces passively and securely reject the waste process heat in an environmentally benign manner. The resultant,more » integrated energy systems are highly suitable for small grids, rural areas, and arid regions.« less

Planetary benchmarks. [structural design criteria for radar reference devices on planetary surfaces

NASA Technical Reports Server (NTRS)

Uphoff, C.; Staehle, R.; Kobrick, M.; Jurgens, R.; Price, H.; Slade, M.; Sonnabend, D.

1978-01-01

Design criteria and technology requirements for a system of radar reference devices to be fixed to the surfaces of the inner planets are discussed. Offshoot applications include the use of radar corner reflectors as landing beacons on the planetary surfaces and some deep space applications that may yield a greatly enhanced knowledge of the gravitational and electromagnetic structure of the solar system. Passive retroreflectors with dimensions of about 4 meters and weighing about 10 kg are feasible for use with orbiting radar at Venus and Mars. Earth-based observation of passive reflectors, however, would require very large and complex structures to be delivered to the surfaces. For Earth-based measurements, surface transponders offer a distinct advantage in accuracy over passive reflectors. A conceptual design for a high temperature transponder is presented. The design appears feasible for the Venus surface using existing electronics and power components.

Surface electrical properties of stainless steel fibres: An AFM-based study

NASA Astrophysics Data System (ADS)

Yin, Jun; D'Haese, Cécile; Nysten, Bernard

2015-03-01

Atomic force microscopy (AFM) electrical modes were used to study the surface electrical properties of stainless steel fibres. The surface electrical conductivity was studied by current sensing AFM and I-V spectroscopy. Kelvin probe force microscopy was used to measure the surface contact potential. The oxide film, known as passivation layer, covering the fibre surface gives rise to the observation of an apparently semiconducting behaviour. The passivation layer generally exhibits a p-type semiconducting behaviour, which is attributed to the predominant formation of chromium oxide on the surface of the stainless steel fibres. At the nanoscale, different behaviours are observed from points to points, which may be attributed to local variations of the chemical composition and/or thickness of the passivation layer. I-V curves are well fitted with an electron tunnelling model, indicating that electron tunnelling may be the predominant mechanism for electron transport.

Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

NASA Astrophysics Data System (ADS)

Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

2016-07-01

Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, Xu; Kotov, Valeri N.; Uchoa, Bruno

Quantum spin-orbital liquids are elusive strongly correlated states of matter that emerge from quantum frustration between spin and orbital degrees of freedom. A promising route towards the observation of those states is the creation of artificial Mott insulators where antiferromagnetic correlations between spins and orbitals can be designed. We show that Coulomb impurity lattices on the surface of gapped honeycomb substrates, such as graphene on SiC, can be used to simulate SU(4) symmetric spin-orbital lattice models. We exploit the property that massive Dirac fermions form mid-gap bound states with spin and valley degeneracies in the vicinity of a Coulomb impurity.more » Due to electronic repulsion, the antiferromagnetic correlations of the impurity lattice are driven by a super-exchange interaction with SU(4) symmetry, which emerges from the bound states degeneracy at quarter filling. We propose that quantum spin-orbital liquids can be engineered in artificially designed solid-state systems at vastly higher temperatures than achievable in optical lattices with cold atoms. Lastly, we discuss the experimental setup and possible scenarios for candidate quantum spin-liquids in Coulomb impurity lattices of various geometries.« less

Diffusion and phase change characterization by mass spectrometry

NASA Technical Reports Server (NTRS)

Koslin, M. E.; White, F. A.

1979-01-01

The high temperature diffusion of trace elements in metals and alloys was investigated. Measurements were made by high sensitivity mass spectrometry in which individual atoms were detected, and quantitative data was obtained for zircaloy-2, 304 stainless steel, and tantalum. Additionally, a mass spectrometer was also an analytical tool for determining an allotropic phase change for stainless steel at 955 C, and a phase transition region between 772 C and 1072 C existing for zircaloy-2. Diffusion rates were measured in thin (0.001" (0.0025 cm) and 0.0005" (0.0013 cm)) ribbons which were designed as high temperature thermal ion sources, with the alkali metals as naturally occurring impurities. In the temperature and pressure regime where diffusion measurements were made, the solute atoms evaporated from the ribbon filaments when the impurities diffused to the surface, with a fraction of these impurity atoms ionized according to the Langmuir-Saha relation. The techniques developed can be applied to many other alloys important to space vehicles and supersonic transports; and, with appropriate modifications, to the diffusion of impurities in composites.

Influence of subsurface defects on damage performance of fused silica in ultraviolet laser

NASA Astrophysics Data System (ADS)

Huang, Jin; Zhou, Xinda; Liu, Hongjie; Wang, Fengrui; Jiang, Xiaodong; Wu, Weidong; Tang, Yongjian; Zheng, Wanguo

2013-02-01

In ultraviolet pulse laser, damage performance of fused silica optics is directly dependent on the absorptive impurities and scratches in subsurface, which are induced by mechanical polishing. In the research about influence of subsurface defects on damage performance, a series of fused silica surfaces with various impurity concentrations and scratch structures were created by hydrofluoric (HF) acid solution etching. Time of Flight secondary ion mass spectrometry and scanning probe microprobe revealed that with increasing etching depth, impurity concentrations in subsurface layers are decreased, the scratch structures become smoother and the diameter:depth ratio is increased. Damage performance test with 355-nm pulse laser showed that when 600 nm subsurface thickness is removed by HF acid etching, laser-induced damage threshold of fused silica is raised by 40 percent and damage density is decreased by over one order of magnitude. Laser weak absorption was tested to explain the cause of impurity elements impacting damage performance, field enhancement caused by change of scratch structures was calculated by finite difference time domain simulation, and the calculated results are in accord with the damage test results.

Designing Quantum Spin-Orbital Liquids in Artificial Mott Insulators

PubMed Central

Dou, Xu; Kotov, Valeri N.; Uchoa, Bruno

2016-01-01

Quantum spin-orbital liquids are elusive strongly correlated states of matter that emerge from quantum frustration between spin and orbital degrees of freedom. A promising route towards the observation of those states is the creation of artificial Mott insulators where antiferromagnetic correlations between spins and orbitals can be designed. We show that Coulomb impurity lattices on the surface of gapped honeycomb substrates, such as graphene on SiC, can be used to simulate SU(4) symmetric spin-orbital lattice models. We exploit the property that massive Dirac fermions form mid-gap bound states with spin and valley degeneracies in the vicinity of a Coulomb impurity. Due to electronic repulsion, the antiferromagnetic correlations of the impurity lattice are driven by a super-exchange interaction with SU(4) symmetry, which emerges from the bound states degeneracy at quarter filling. We propose that quantum spin-orbital liquids can be engineered in artificially designed solid-state systems at vastly higher temperatures than achievable in optical lattices with cold atoms. We discuss the experimental setup and possible scenarios for candidate quantum spin-liquids in Coulomb impurity lattices of various geometries. PMID:27553516

Flux Noise due to Spins in SQUIDs

NASA Astrophysics Data System (ADS)

LaForest, Stephanie

Superconducting Quantum Interference Devices (SQUIDs) are currently being used as flux qubits and read-out detectors in a variety of solid-state quantum computer architectures. The main limitation of SQUID qubits is that they have a coherence time of the order of 10 micros, due to the presence of intrinsic flux noise that is not yet fully understood. The origin of flux noise is currently believed to be related to spin impurities present in the materials and interfaces that form the device. Here we present a novel numerical method that enables calculations of the flux produced by spin impurities even when they are located quite close to the SQUID wire. We show that the SQUID will be particularly sensitive to spins located at its wire edges, generating flux shifts of up to 4 nano flux quanta, much higher than previous calculations based on the software package FastHenry. This shows that spin impurities in a particular region along the wire's surface play a much more important role in producing flux noise than other spin impurities located elsewhere in the device.

Passive micromixer using by convection and surface tension effects with air-liquid interface.

PubMed

Ju, Jongil; Warrick, Jay

2013-12-01

This article describes a passive micromixer that utilizes an air-liquid interface and surface tension effects to enhance fluid mixing via convection and Marangoni effects. Performance of the microfluidic component is tested within a passive-pumping-based device that consists of three microchannels connected in succession using passive micro-mixers. Mixing was quantified at 5 key points along the length of the device using microscope images of patterned streams of Alexa 488 fluorescent-dyed water and pure DI water flowing through the device. The passive micro-mixer mixed fluid 15-20 times more effectively than diffusion between laminar flow streams alone and is a novel micro-mixer embodiment that provides an additional strategy for removing external components from microscale devices for simpler, autonomous operation.

Passive micromixer using by convection and surface tension effects with air-liquid interface

PubMed Central

Ju, Jongil; Warrick, Jay

2014-01-01

This article describes a passive micromixer that utilizes an air-liquid interface and surface tension effects to enhance fluid mixing via convection and Marangoni effects. Performance of the microfluidic component is tested within a passive-pumping-based device that consists of three microchannels connected in succession using passive micro-mixers. Mixing was quantified at 5 key points along the length of the device using microscope images of patterned streams of Alexa 488 fluorescent-dyed water and pure DI water flowing through the device. The passive micro-mixer mixed fluid 15–20 times more effectively than diffusion between laminar flow streams alone and is a novel micro-mixer embodiment that provides an additional strategy for removing external components from microscale devices for simpler, autonomous operation. PMID:25104979

Cobalt adatoms on graphene: Effects of anisotropies on the correlated electronic structure

NASA Astrophysics Data System (ADS)

Mozara, R.; Valentyuk, M.; Krivenko, I.; Şaşıoǧlu, E.; Kolorenč, J.; Lichtenstein, A. I.

2018-02-01

Impurities on surfaces experience a geometric symmetry breaking induced not only by the on-site crystal-field splitting and the orbital-dependent hybridization, but also by different screening of the Coulomb interaction in different directions. We present a many-body study of the Anderson impurity model representing a Co adatom on graphene, taking into account all anisotropies of the effective Coulomb interaction, which we obtained by the constrained random-phase approximation. The most pronounced differences are naturally displayed by the many-body self-energy projected onto the single-particle states. For the solution of the Anderson impurity model and analytical continuation of the Matsubara data, we employed new implementations of the continuous-time hybridization expansion quantum Monte Carlo and the stochastic optimization method, and we verified the results in parallel with the exact diagonalization method.

Nanomechanical dissipation at a tip-induced Kondo onset

NASA Astrophysics Data System (ADS)

Baruselli, Pier Paolo; Fabrizio, Michele; Tosatti, Erio

2017-08-01

The onset or demise of Kondo effect in a magnetic impurity on a metal surface can be triggered, as sometimes observed, by the simple mechanical nudging of a tip. Such a mechanically driven quantum phase transition must reflect in a corresponding mechanical dissipation peak; yet, this kind of signature has not been focused upon so far. Aiming at the simplest theoretical modeling, we treat the impurity as an Anderson impurity model, the tip action as a hybridization switching, and solve the problem by numerical renormalization group. Studying this model as function of temperature and magnetic field we are able to isolate the Kondo contribution to dissipation. While that is, reasonably, of the order of the Kondo energy, its temperature evolution shows a surprisingly large tail even above the Kondo temperature. The detectability of Kondo mechanical dissipation in atomic force microscopy is also discussed.

Thermogravimetric feasibility study of argon purification using powders of titanium alloys with molybdenum and vanadium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eremeev, A.P.; Veselovskii, P.F.

1987-10-20

The high adsorption and chemical activity of titanium alloy powders (TiMo > TiV) having specific size and chemical compositions, and the nature of the surface and its specific energy characteristics permit one to use them effectively for the purification of argon and other inert gases from impurities such as water vapor, carbon dioxide gas, oxygen, and nitrogen. In agreement with the developed activity series the irreversible adsorption of impurities (1 vol. %) by the indicated powders can be controlled using powders or filters pressed from these powders by heating to temperatures of 500-700/sup 0/. The thickness of the filters canmore » be established on the basis of the rate constants of the chemical reactions of the impurities with the TiMo and TiV powders obtained in this study.« less

Final Technical Report: Effects of Impurities on Fuel Cell Performance and Durability

DOE Office of Scientific and Technical Information (OSTI.GOV)

James G. Goodwin, Jr.; Hector Colon-Mercado; Kitiya Hongsirikarn

2011-11-11

The main objectives of this project were to investigate the effect of a series of potential impurities on fuel cell operation and on the particular components of the fuel cell MEA, to propose (where possible) mechanism(s) by which these impurities affected fuel cell performance, and to suggest strategies for minimizing these impurity effects. The negative effect on Pt/C was to decrease hydrogen surface coverage and hydrogen activation at fuel cell conditions. The negative effect on Nafion components was to decrease proton conductivity, primarily by replacing/reacting with the protons on the Bronsted acid sites of the Nafion. Even though already wellmore » known as fuel cell poisons, the effects of CO and NH3 were studied in great detail early on in the project in order to develop methodology for evaluating poisoning effects in general, to help establish reproducibility of results among a number of laboratories in the U.S. investigating impurity effects, and to help establish lower limit standards for impurities during hydrogen production for fuel cell utilization. New methodologies developed included (1) a means to measure hydrogen surface concentration on the Pt catalyst (HDSAP) before and after exposure to impurities, (2) a way to predict conductivity of a Nafion membranes exposed to impurities using a characteristic acid catalyzed reaction (methanol esterification of acetic acid), and, more importantly, (3) application of the latter technique to predict conductivity on Nafion in the catalyst layer of the MEA. H2-D2 exchange was found to be suitable for predicting hydrogen activation of Pt catalysts. The Nafion (ca. 30 wt%) on the Pt/C catalyst resides primarily on the external surface of the C support where it blocks significant numbers of micropores, but only partially blocks the pore openings of the meso- and macro-pores wherein lie the small Pt particles (crystallites). For this reason, even with 30 wt% Nafion on the Pt/C, few Pt sites are blocked and, hence, are accessible for hydrogen activation. Of the impurities studied, CO, NH3, perchloroethylene (also known as tetrachloroethylene), tetrahydrofuran, diborane, and metal cations had significant negative effects on the components in a fuel cell. While CO has no effect on the Nafion, it significantly poisons the Pt catalyst by adsorbing and blocking hydrogen activation. The effect can be reversed with time once the flow of CO is stopped. NH3 has no effect on the Pt catalyst at fuel cell conditions; it poisons the proton sites on Nafion (by forming NH4+ cations), decreasing drastically the proton conductivity of Nafion. This poisoning can slowly be reversed once the flow of NH3 is stopped. Perchloroethylene has a major effect on fuel cell performance. Since it has little/no effect on Nafion conductivity, its poisoning effect is on the Pt catalyst. However, this effect takes place primarily for the Pt catalyst at the cathode, since the presence of oxygen is very important for this poisoning effect. Tetrahydrofuran was shown not to impact Nafion conductivity; however, it does affect fuel cell performance. Therefore, its primary effect is on the Pt catalyst. The effect of THF on fuel cell performance is reversible. Diborane also can significant affect fuel cell performance. This effect is reversible once diborane is removed from the inlet streams. H2O2 is not an impurity usually present in the hydrogen or oxygen streams to a fuel cell. However, it is generated during fuel cell operation. The presence of Fe cations in the Nafion due to system corrosion and/or arising from MEA production act to catalyze the severe degradation of the Nafion by H2O2. Finally, the presence of metal cation impurities (Na+, Ca 2+, Fe3+) in Nafion from MEA preparation or from corrosion significantly impacts its proton conductivity due to replacement of proton sites. This effect is not reversible. Hydrocarbons, such as ethylene, might be expected to affect Pt or Nafion but do not at a typical fuel cell temperature of 80oC. In the presence of large quantities of hydrogen on the anode side, ethylene is converted to ethane which is very nonreactive. More surprisingly, even more reactive hydrocarbons such as formic acid and acetaldehyde do not appear to react enough with the strong Bronsted acid sites on Nafion at such low temperatures to affect Nafion conductivity properties. These results clearly identify a number of impurities which can have a detrimental impact on fuel cell performance, although some are reversible. Obviously, fuel cells exposed to impurities/poisons which are reversible can recover their original performance capabilities once the impurity flow is stopped. Impurities with irreversible effects should be either minimized in the feed streams, if possible, or new catalytic materials or ion conductors will need to be used to minimize their impact.« less

Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James

2015-12-07

A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} formore » 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.« less

Effect of surface treatment on unalloyed titanium implants: spectroscopic analyses.

PubMed

Kilpadi, D V; Raikar, G N; Liu, J; Lemons, J E; Vohra, Y; Gregory, J C

1998-06-15

Surgical implant finishing and sterilization procedures were investigated to determine surface characteristics of unalloyed titanium (Ti). All specimens initially were cleaned with phosphoric acid and divided into five groups for comparisons of different surface treatments (C = cleaned as above, no further treatment; CP = C and passivated in nitric acid; CPS = CP and dry-heat sterilized; CPSS = CPS and resterilized; CS = C and dry-heat sterilized). Auger (AES), X-ray photoelectron (XPS), and Raman spectroscopic methods were used to examine surface compositions. The surface oxides formed by all treatments primarily were TiO2, with some Ti2O3 and possibly TiO. Significant concentrations of carbonaceous substances also were observed. The cleaning procedure alone resulted in residual phosphorus, primarily as phosphate groups along with some hydrogen phosphates. A higher percentage of physisorbed water appeared to be associated with the phosphorus. Passivation (with HNO3) alone removed phosphorus from the surface; specimens sterilized without prior passivation showed the thickest oxide and phosphorus profiles, suggesting that passivation alters the oxide characteristics either directly by altering the oxide structure or indirectly by removing moieties that alter the oxide. Raman spectroscopy showed no crystalline order in the oxide. Carbon, oxygen, phosphorus, and nitrogen presence were found to correlate with previously determined surface energy.

Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

NASA Astrophysics Data System (ADS)

Shu, Zhan

With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRV<5 cm/s) and lower absorption losses. The low recombination rate at the stack structure passivated c-Si surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and the carrier capture cross sections of interface defect states were extracted. Additionally, anti-reflection properties of the stack structure were optimized and optical losses were analyzed. The Voc over 700 mV and Jsc over 38 mA/cm2 were achieved in IBC-SHJ solar cells using the stack structure for front surface passivation. Direct comparison shows that such low temperature deposited stack structure developed in this work achieves comparable device performance to the high temperature processed front surface passivation structure used in other high efficiency IBC solar cells. However, the lower fill factor (FF) of IBC-SHJ solar cell as compared with traditional front a-Si:H/c-Si heterojunction cell (HIT cell) greatly limits the overall performance of these devices. Two-dimensional (2D) simulations were used to comparatively model the HIT and IBC-SHJ solar cells to understand the underlying device physics which controls cell performance. The effects of a wide range of device parameters were investigated in the simulation, and pathways to improve the FF of IBC-SHJ solar cell were suggested.

Ion beam microtexturing and enhanced surface diffusion

NASA Technical Reports Server (NTRS)

Robinson, R. S.

1982-01-01

Ion beam interactions with solid surfaces are discussed with particular emphasis on microtexturing induced by the deliberate deposition of controllable amounts of an impurity material onto a solid surface while simultaneously sputtering the surface with an ion beam. Experimental study of the optical properties of microtextured surfaces is described. Measurements of both absorptance as a function of wavelength and emissivity are presented. A computer code is described that models the sputtering and ion reflection processes involved in microtexture formation.

Active/Passive Remote Sensing of the Ocean Surface at Microwave Frequencies

DTIC Science & Technology

1999-09-30

This report summarizes research activities and results obtained under grant N000l4-99-1-0627 "Active/Passive Remote Sensing of the Ocean Surface at...Measurements were completed during April 1999 by the Microwave Remote Sensing Laboratory at the University of Massachusetts.

High reduction of interfacial charge recombination in colloidal quantum dot solar cells by metal oxide surface passivation.

PubMed

Chang, Jin; Kuga, Yuki; Mora-Seró, Iván; Toyoda, Taro; Ogomi, Yuhei; Hayase, Shuzi; Bisquert, Juan; Shen, Qing

2015-03-12

Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar cells (CQDSCs). By coating thin TiO2 layers onto ZnO-NW surfaces, the open-circuit voltage and power conversion efficiency have been improved by over 40% in PbS CQDSCs. Characterization by transient photovoltage decay and impedance spectroscopy indicated that the interfacial recombination was significantly reduced by the surface passivation strategy. An efficiency as high as 6.13% was achieved through the passivation approach and optimization for the length of the ZnO-NW arrays (device active area: 16 mm2). All solar cells were tested in air, and exhibited excellent air storage stability (without any performance decline over more than 130 days). This work highlights the significance of metal oxide passivation in achieving high performance BHJ solar cells. The charge recombination mechanism uncovered in this work could shed light on the further improvement of PbS CQDSCs and/or other types of solar cells.

Silver nanoparticles-incorporated Nb2O5 surface passivation layer for efficiency enhancement in dye-sensitized solar cells.

PubMed

Suresh, S; Unni, Gautam E; Satyanarayana, M; Sreekumaran Nair, A; Mahadevan Pillai, V P

2018-08-15

Guiding and capturing photons at the nanoscale by means of metal nanoparticles and interfacial engineering for preventing back-electron transfer are well documented techniques for performance enhancement in excitonic solar cells. Drifting from the conventional route, we propose a simple one-step process to integrate both metal nanoparticles and surface passivation layer in the porous photoanode matrix of a dye-sensitized solar cell. Silver nanoparticles and Nb 2 O 5 surface passivation layer are simultaneously deposited on the surface of a highly porous nanocrystalline TiO 2 photoanode, facilitating an absorption enhancement in the 465 nm and 570 nm wavelength region and a reduction in back-electron transfer in the fabricated dye-sensitized solar cells together. The TiO 2 photoanodes were prepared by spray pyrolysis deposition method from a colloidal solution of TiO 2 nanoparticles. An impressive 43% enhancement in device performance was accomplished in photoanodes having an Ag-incorporated Nb 2 O 5 passivation layer as against a cell without Ag nanoparticles. By introducing this idea, we were able to record two benefits - the metal nanoparticles function as the absorption enhancement agent, and the Nb 2 O 5 layer as surface passivation for TiO 2 nanoparticles and as an energy barrier layer for preventing back-electron transfer - in a single step. Copyright © 2018 Elsevier Inc. All rights reserved.

A novel and sensitive fluorescence sensor for glutathione detection by controlling the surface passivation degree of carbon quantum dots.

PubMed

Pan, Jiahong; Zheng, Zengyao; Yang, Jianying; Wu, Yaoyu; Lu, Fushen; Chen, Yaowen; Gao, Wenhua

2017-05-01

A novel fluorescence sensor based on controlling the surface passivation degree of carbon quantum dots (CQDs) was developed for glutathione (GSH) detection. First, we found that the fluorescence intensity of the CQDs which was obtained by directly pyrolyzing citric acid would increased largely after the surface passivation treatment by 1-ethyl-3-(3-dimethylaminopropyl)-carbodiimide (EDC). In the light of this phenomenon, we designed a simple, rapid and selective fluorescence sensor based on the surface passivated CQDs. A certain and excess amount of EDC were mixed with GSH, part of EDC would form a stable complex with GSH owing to the exposed sulfhydryl group of GSH. As the synthesized CQDs were added into the above mixture solution, the fluorescence intensity of the (EDC/GSH)/CQDs mixture solution could be directly related to the amount of GSH. Compared to other fluorescence analytical methods, the fluorescence sensor we design is neither the traditional fluorescent "turn on" probes nor "turn off" probes. It is a new fluorescence analytical method that target object indirectly control the surface passivation degree of CQDs so that it can realize the detection of the target object. Moreover, the proposed method manifested great advantages including short analysis time, low cost and ease of operation. Copyright © 2017 Elsevier B.V. All rights reserved.

Quantifying bioalbedo: a new physically based model and discussion of empirical methods for characterising biological influence on ice and snow albedo

NASA Astrophysics Data System (ADS)

Cook, Joseph M.; Hodson, Andrew J.; Gardner, Alex S.; Flanner, Mark; Tedstone, Andrew J.; Williamson, Christopher; Irvine-Fynn, Tristram D. L.; Nilsson, Johan; Bryant, Robert; Tranter, Martyn

2017-11-01

The darkening effects of biological impurities on ice and snow have been recognised as a control on the surface energy balance of terrestrial snow, sea ice, glaciers and ice sheets. With a heightened interest in understanding the impacts of a changing climate on snow and ice processes, quantifying the impact of biological impurities on ice and snow albedo (bioalbedo) and its evolution through time is a rapidly growing field of research. However, rigorous quantification of bioalbedo has remained elusive because of difficulties in isolating the biological contribution to ice albedo from that of inorganic impurities and the variable optical properties of the ice itself. For this reason, isolation of the biological signature in reflectance data obtained from aerial/orbital platforms has not been achieved, even when ground-based biological measurements have been available. This paper provides the cell-specific optical properties that are required to model the spectral signatures and broadband darkening of ice. Applying radiative transfer theory, these properties provide the physical basis needed to link biological and glaciological ground measurements with remotely sensed reflectance data. Using these new capabilities we confirm that biological impurities can influence ice albedo, then we identify 10 challenges to the measurement of bioalbedo in the field with the aim of improving future experimental designs to better quantify bioalbedo feedbacks. These challenges are (1) ambiguity in terminology, (2) characterising snow or ice optical properties, (3) characterising solar irradiance, (4) determining optical properties of cells, (5) measuring biomass, (6) characterising vertical distribution of cells, (7) characterising abiotic impurities, (8) surface anisotropy, (9) measuring indirect albedo feedbacks, and (10) measurement and instrument configurations. This paper aims to provide a broad audience of glaciologists and biologists with an overview of radiative transfer and albedo that could support future experimental design.

Deep-level transient spectroscopy of Pd-H complexes in silicon

NASA Astrophysics Data System (ADS)

Sachse, J.-U.; Weber, J.; Lemke, H.

2000-01-01

The interaction of atomic hydrogen with substitutional palladium impurities is studied in n- and p-type Si by deep-level transient spectroscopy. After wet-chemical etching, we determine seven different electrically active and at least one passive palladium hydrogen complex. The levels belong to Pd complexes with different number of hydrogen atoms. The PdH1 complex exhibits one level E(200) at EC-0.43 eV. PdH2 has two levels E(60) at EC-0.10 eV and H(280) at EV+0.55 eV. Four levels are assigned to the PdH3 complex E(160) at EC-0.29 eV, H(140) at EV+0.23 eV, H(55) at EV+0.08 eV, and H(45) at EV+0.07 eV. An electrically passive complex is associated with a PdH4 complex. There is great similarity with the correspondent complexes in Pt-doped Si. Annealing above 650 K destroys all hydrogen related complexes and restores the original substitutional Pd concentration.

Passivation and activation of Mg acceptors in heavily doped GaN

NASA Astrophysics Data System (ADS)

Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Alan Doolittle, W.

2011-08-01

Electron paramagnetic resonance measurements are used to monitor the passivation and activation of the Mg-related acceptor in GaN doped with different concentrations of Mg, up to 2 × 1020 cm-3. Samples were annealed in either forming gas (H2:N2) or pure N2 between 200 and 900 °C. As expected, the Mg-related EPR signal is reduced by at least a factor of ten during the forming gas treatment; while the pure N2 environment revives the signal. However, the study also shows that reactions between Mg and hydrogen occur at a temperature as low as 525 °C in the 1020 cm-3 Mg doped samples; while in more lightly doped samples, temperatures greater than 700 °C are required to observe changes in the Mg signal intensity. While the observations support the model in which a hydrogen atom ionizes at the Mg impurity and the remaining proton bonds at a near neighbor, the different temperature dependence suggests that hydrogen diffusion is affected by the increased Mg concentration.

Combined active and passive microwave remote sensing of vegetated surfaces at l-band

USDA-ARS?s Scientific Manuscript database

In previous work the distorted Born approximation (DBA) of volume scattering was combined with the numerical solutions of Maxwell equations (NMM3D) for a rough surface to calculate the radar backscattering coefficient for the Soil Moisture Active Passive (SMAP) mission. The model results were valida...

The Soil Moisture Active Passive (SMAP) Radar: Measurements at High Latitudes and of Surface Freeze/Thaw State

NASA Technical Reports Server (NTRS)

Spencer, Michael; Dunbar, Scott; Chen, Curtis

2013-01-01

The Soil Moisture Active/Passive (SMAP) mission is scheduled for a late 2014 launch date. The mission will use both active radar and passive radiometer instruments at L-Band in order to achieve the science objectives of measuring soil moisture and land surface freeze-thaw state. To achieve requirements for a wide swath at sufficiently high resolution for both active and passive channels, an instrument architecture that uses a large rotating reflector is employed. In this paper, focus will be placed on the radar design. The radar will employ synthetic-aperture processing to achieve a "moderate" resolution dual-pol product over a 1000 km swath. Because the radar is operating continuously, very frequent temporal coverage will be achieved at high latitudes. This data will be used to produce a surface freeze/thaw state data product.

Surface passivation of mixed-halide perovskite CsPb(BrxI1-x)3 nanocrystals by selective etching for improved stability.

PubMed

Jing, Qiang; Zhang, Mian; Huang, Xiang; Ren, Xiaoming; Wang, Peng; Lu, Zhenda

2017-06-08

In recent years, there has been an unprecedented rise in the research of halide perovskites because of their important optoelectronic applications, including photovoltaic cells, light-emitting diodes, photodetectors and lasers. The most pressing question concerns the stability of these materials. Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(Br x I 1-x ) 3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability. After selective etching with acetone, surface iodine is partially etched away to form a bromine-rich surface passivation layer on mixed-halide perovskite nanocrystals. This passivation layer remarkably stabilizes the nanocrystals, making their PL intensity improved by almost three orders of magnitude. It is expected that a similar passivation layer can also be applied to various other kinds of perovskite materials with poor stability issues.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jadeja, K.A.; Patel, K.M.; Tanna, R.L., E-mail: kumarpal@ipr.res.in

Low temperature glow discharge wall conditioning (GDC) using H{sub 2} gas is effective in reduction of oxygen and carbon (low-Z) contain impurities on near surface region of vessel wall. The high retention of hydrogen in vessel wall/components due to long operation of H{sub 2} GDC increases hydrogen out-gassing during tokamak operation and affects the production of high temperature plasma. The hydrogen retention can be reduced using inert gas GDC by sputter cleaning for short duration. But in that case the out-gassing rate of inert gas increases, that again impairs the plasma performance. To overcome above problems, the GDC with hydrogen-inertmore » gas mixture can be used for better removal of C and O surface contaminants and low hydrogen retention in surface. In ADITYA tokamak, H{sub 2}-GDC is carried out regularly after plasma operation, while the GDC with argon-hydrogen (Ar-H{sub 2}) mixture has been experimentally tested to observe the reduction of oxygen and carbon impurities along with low hydrogen retention. In Ar-H{sub 2} GDC, the reason being the formation of ArH{sup +} hydride ions, which has quite long life and more energy compared to H{sub 2}{sup +} ions formed in H{sub 2} GDC for breaking the bond of wall molecules. A systematic comparative study of H{sub 2} GDC and Ar-H{sub 2} Mixture GDC by changing the mixture ratio has been carried out in ADITYA tokamak. The relative levels of oxygen and carbon contain impurities have been measured using residual gas analyzer in both GDC's. We have observed a substantial reduction in oxygen and carbon impurities with a significant improvement in wall condition with Ar-H{sub 2} GDC compared to the H{sub 2} GDC. The effect of wall conditioning by Ar-H{sub 2} GDC on the performance of high temperature plasma operation will be presented in this paper. (author)« less

Modelling of hydrogen transport in silicon solar cell structures under equilibrium conditions

NASA Astrophysics Data System (ADS)

Hamer, P.; Hallam, B.; Bonilla, R. S.; Altermatt, P. P.; Wilshaw, P.; Wenham, S.

2018-01-01

This paper presents a model for the introduction and redistribution of hydrogen in silicon solar cells at temperatures between 300 and 700 °C based on a second order backwards difference formula evaluated using a single Newton-Raphson iteration. It includes the transport of hydrogen and interactions with impurities such as ionised dopants. The simulations lead to three primary conclusions: (1) hydrogen transport across an n-type emitter is heavily temperature dependent; (2) under equilibrium conditions, hydrogen is largely driven by its charged species, with the switch from a dominance of negatively charged hydrogen (H-) to positively charged hydrogen (H+) within the emitter region critical to significant transport across the junction; and (3) hydrogen transport across n-type emitters is critically dependent upon the doping profile within the emitter, and, in particular, the peak doping concentration. It is also observed that during thermal processes after an initial high temperature step, hydrogen preferentially migrates to the surface of a phosphorous doped emitter, drawing hydrogen out of the p-type bulk. This may play a role in several effects observed during post-firing anneals in relation to the passivation of recombination active defects and even the elimination of hydrogen-related defects in the bulk of silicon solar cells.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

NASA Astrophysics Data System (ADS)

Knutsen, K. E.; Galeckas, A.; Zubiaga, A.; Tuomisto, F.; Farlow, G. C.; Svensson, B. G.; Kuznetsov, A. Yu.

2012-09-01

By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ˜1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.

Ion temperature and toroidal rotation in JET's low torque plasmas.

PubMed

Bernardo, J; Nave, M F F; Giroud, C; Reyes Cortes, S; Bizarro, João P S

2016-11-01

This paper reports on the procedure developed as the best method to provide an accurate and reliable estimation of the ion temperature T i and the toroidal velocity v ϕ from Charge-eXchange Recombination Spectroscopy (CXRS) data from intrinsic rotation experiments at the Joint European Torus with the carbon wall. The low impurity content observed in such plasmas, resulting in low active CXRS signal, alongside low Doppler shifts makes the determination of T i and v ϕ particularly difficult. The beam modulation method will be discussed along with the measures taken to increase photon statistics and minimise errors from the absolute calibration and magneto-hydro-dynamics effects that may impact the CXRS passive emission.

Modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Modified silicon carbide whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-05-21

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-02-19

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1990-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Nematic superconductivity in CuxBi2Se3 : Surface Andreev bound states

NASA Astrophysics Data System (ADS)

Hao, Lei; Ting, C. S.

2017-10-01

We study theoretically the topological surface states (TSSs) and the possible surface Andreev bound states (SABSs) of CuxBi2Se3 , which is known to be a topological insulator at x =0 . The superconductivity (SC) pairing of this compound is assumed to have broken spin-rotation symmetry, similar to that of the A-phase of 3He as suggested by recent nuclear-magnetic resonance experiments. For both spheroidal and corrugated cylindrical Fermi surfaces with the hexagonal warping terms, we show that the bulk SC gap is rather anisotropic; the minimum of the gap is negligibly small as compared to the maximum of the gap. This would make the fully gapped pairing effectively nodal. For a clean system, our results indicate the bulk of this compound to be a topological superconductor with the SABSs appearing inside the bulk SC gap. The zero-energy SABSs, which are Majorana fermions, together with the TSSs not gapped by the pairing, produce a zero-energy peak in the surface density of states (SDOS). The SABSs are expected to be stable against short-range nonmagnetic impurities, and the local SDOS is calculated around a nonmagnetic impurity. The relevance of our results to experiments is discussed.

Influence of surface roughness on cetyltrimethylammonium bromide adsorption from aqueous solution.

PubMed

Wu, Shuqing; Shi, Liu; Garfield, Lucas B; Tabor, Rico F; Striolo, Alberto; Grady, Brian P

2011-05-17

The influence of surface roughness on surfactant adsorption was studied using a quartz crystal microbalance with dissipation (QCM-D). The sensors employed had root-mean-square (R) roughness values of 2.3, 3.1, and 5.8 nm, corresponding to fractal-calculated surface area ratios (actual/nominal) of 1.13, 1.73, and 2.53, respectively. Adsorption isotherms measured at 25 °C showed that adsorbed mass of cetyltrimethylammonium bromide per unit of actual surface area below 0.8 cmc, or above 1.2 cmc, decreases as the surface roughness increases. At the cmc, both the measured adsorbed amount and the measured dissipation increased dramatically on the rougher surfaces. These results are consistent with the presence of impurities, suggesting that roughness exacerbates well-known phenomena reported in the literature of peak impurity-related adsorption at the cmc. The magnitude of the increase, especially in dissipation, suggests that changes in adsorbed amount may not be the only reason for the observed results, as aggregates at the cmc on rougher surfaces are more flexible and likely contain larger amounts of solvent. Differences in adsorption kinetics were also found as a function of surface roughness, with data showing a second, slower adsorption rate after rapid initial adsorption. A two-rate Langmuir model was used to further examine this effect. Although adsorption completes faster on the smoother surfaces, initial adsorption at zero surface coverage is faster on the rougher surfaces, suggesting the presence of more high-energy sites on the rougher surfaces.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

An automated cross-correlation based event detection technique and its application to surface passive data set

USGS Publications Warehouse

Forghani-Arani, Farnoush; Behura, Jyoti; Haines, Seth S.; Batzle, Mike

2013-01-01

In studies on heavy oil, shale reservoirs, tight gas and enhanced geothermal systems, the use of surface passive seismic data to monitor induced microseismicity due to the fluid flow in the subsurface is becoming more common. However, in most studies passive seismic records contain days and months of data and manually analysing the data can be expensive and inaccurate. Moreover, in the presence of noise, detecting the arrival of weak microseismic events becomes challenging. Hence, the use of an automated, accurate and computationally fast technique for event detection in passive seismic data is essential. The conventional automatic event identification algorithm computes a running-window energy ratio of the short-term average to the long-term average of the passive seismic data for each trace. We show that for the common case of a low signal-to-noise ratio in surface passive records, the conventional method is not sufficiently effective at event identification. Here, we extend the conventional algorithm by introducing a technique that is based on the cross-correlation of the energy ratios computed by the conventional method. With our technique we can measure the similarities amongst the computed energy ratios at different traces. Our approach is successful at improving the detectability of events with a low signal-to-noise ratio that are not detectable with the conventional algorithm. Also, our algorithm has the advantage to identify if an event is common to all stations (a regional event) or to a limited number of stations (a local event). We provide examples of applying our technique to synthetic data and a field surface passive data set recorded at a geothermal site.

On the origin of the photocurrent of electrochemically passivated p-InP(100) photoelectrodes.

PubMed

Goryachev, Andrey; Gao, Lu; van Veldhoven, René P J; Haverkort, Jos E M; Hofmann, Jan P; Hensen, Emiel J M

2018-05-15

III-V semiconductors such as InP are highly efficient light absorbers for photoelectrochemical (PEC) water splitting devices. Yet, their cathodic stability is limited due to photocorrosion and the measured photocurrents do not necessarily originate from H2 evolution only. We evaluated the PEC stability and activation of model p-InP(100) photocathodes upon photoelectrochemical passivation (i.e. repeated surface oxidation/reduction). The electrode was subjected to a sequence of linear potential scans with or without intermittent passivation steps (repeated passivation and continuous reduction, respectively). The evolution of H2 and PH3 gases was monitored by online electrochemical mass spectrometry (OLEMS) and the Faradaic efficiencies of these processes were determined. Repeated passivation led to an increase of the photocurrent in 0.5 M H2SO4, while continuous reduction did not affect the photocurrent of p-InP(100). Neither H2 nor PH3 formation increased to the same extent as the photocurrent during the repeated passivation treatment. Surface analysis of the spent electrodes revealed substantial roughening of the electrode surface by repeated passivation, while continuous reduction left the surface unaltered. On the other hand, photocathodic conditioning performed in 0.5 M HCl led to the expected correlation between photocurrent increase and H2 formation. Ultimately, the H2 evolution rates of the photoelectrodes in H2SO4 and HCl are comparable. The much higher photocurrent in H2SO4 is due to competing side-reactions. The results emphasize the need for a detailed evaluation of the Faradaic efficiencies of all the involved processes using a chemical-specific technique like OLEMS. Photo-OLEMS can be beneficial in the study of photoelectrochemical reactions enabling the instantaneous detection of small amounts of reaction by-products.

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

PubMed

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

NASA Astrophysics Data System (ADS)

Gruszko, J.; Majorana Collaboration

2017-09-01

The Majorana Demonstrator searches for neutrinoless double-beta decay of 76Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy-degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this contribution we discuss the characteristics of these events and the development of a filter that can identify the occurrence of this delayed charge recovery, allowing for the efficient rejection of passivated surface alpha events in analysis.

An Investigation of the Effect of Surface Impurities on the Adsorption Kinetics of Hydrogen Chemisorbed onto Iron

NASA Technical Reports Server (NTRS)

Shanabarger, M. R.

1997-01-01

The original goal of this program was to investigate the effect surface impurities have on the heterogeneous kinetic processes of those molecular species which produce gaseous hydrogen degradation of the mechanical properties of metallic structural materials. However, shortly after the initiation of the original program, the program's NASA Technical Monitor, Dr. Howard Nelson, requested that the effort supported by this Co-operative Agreement be redirected to study more pressing materials issues associated to the development of the National Aero-Space Plane (NASP). The results of these efforts are outlined in this report. Detailed discussions of specific work, including experimental techniques and procedures, will be found in the publications listed with the subsection discussing that specific work as well and in Section 5. No inventions were generated or disclosed within this Agreement.

PROCESSES OF RECOVERING URANIUM FROM A CALUTRON

DOEpatents

Baird, D.O.; Zumwalt, L.R.

1958-07-15

An improved process is described for recovering the residue of a uranium compound which has been subjected to treatment in a calutron, from the parts of the calutron disposed in the source region upon which the residue is deposited. The process may be utilized when the uranium compound adheres to a surface containing metals of the group consisting of copper, iron, chromium, and nickel. The steps comprise washing the surface with an aqueous acidic oxidizing solvent for the uranium whereby there is obtained an acidic aqueous Solution containing uranium as uranyl ions and metals of said group as impurities, treating the acidic solution with sodium acetate in the presenee of added sodium nitrate to precipitate the uranium as sodium uranyl acetate away from the impurities in the solution, and separating the sodium uranyl acetate from the solution.

Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

PubMed

Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

2015-12-09

Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

NASA Technical Reports Server (NTRS)

Chervenak, James; Hess, Larry

2013-01-01

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Active and Passive Remote Sensing of Ice

DTIC Science & Technology

1991-11-15

To demonstrate the use of polarimetry in passive remote sensing of azimuthally asymmetric features on a terrain surface, an experiment was designed...azimuthal asymmetry on the remotely sensed soil surface. It is also observed from the experiment that the brightness temperatures for all three Stokes...significant implication of this experiment is that the surface asymmetry can be detected with a measurement of U at a single azimuthal angle. -8

Large Exciton Energy Shifts by Reversible Surface Exchange in 2D II-VI Nanocrystals.

PubMed

Zhou, Yang; Wang, Fudong; Buhro, William E

2015-12-09

Reaction of n-octylamine-passivated {CdSe[n-octylamine](0.53±0.06)} quantum belts with anhydrous metal carboxylates M(oleate)2 (M = Cd, Zn) results in a rapid exchange of the L-type amine passivation for Z-type M(oleate)2 passivation. The cadmium-carboxylate derivative is determined to have the composition {CdSe[Cd(oleate)2](0.19±0.02)}. The morphologies and crystal structures of the quantum belts are largely unaffected by the exchange processes. Addition of n-octylamine or oleylamine to the M(oleate)2-passivated quantum belts removes M(oleate)2 and restores the L-type amine passivation. Analogous, reversible surface exchanges are also demonstrated for CdS quantum platelets. The absorption and emission spectra of the quantum belts and platelets are reversibly shifted to lower energy by M(oleate)2 passivation vs amine passivation. The largest shift of 140 meV is observed for the Cd(oleate)2-passivated CdSe quantum belts. These shifts are attributed entirely to changes in the strain states in the Zn(oleate)2-passivated nanocrystals, whereas changes in strain states and confinement dimensions contribute roughly equally to the shifts in the Cd(oleate)2-passivated nanocrystals. Addition of Cd(oleate)2, which electronically couples to the nanocrystal lattices, increases the effective thickness of the belts and platelets by approximately a half of a monolayer, thus increasing the confinement dimension.

Investigation of silicon surface passivation by silicon nitride film deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

Passive Thermal Management of Foil Bearings

NASA Technical Reports Server (NTRS)

Bruckner, Robert J. (Inventor)

2015-01-01

Systems and methods for passive thermal management of foil bearing systems are disclosed herein. The flow of the hydrodynamic film across the surface of bearing compliant foils may be disrupted to provide passive cooling and to improve the performance and reliability of the foil bearing system.

An investigation into the effective surface passivation of quantum dots by a photo-assisted chemical method

NASA Astrophysics Data System (ADS)

Joo, So-Yeong; Park, Hyun-Su; Kim, Do-yeon; Kim, Bum-Sung; Lee, Chan Gi; Kim, Woo-Byoung

2018-01-01

In this study, we have developed an effective amino passivation process for quantum dots (QDs) at room temperature and have investigated a passivation mechanism using a photo-assisted chemical method. As a result of the reverse reaction of the H2O molecules, the etching kinetics of the photo-assisted chemical method increased upon increasing the 3-amino-1-propanol (APOL)/H2O ratio of the etching solution. Photon-excited electron-hole pairs lead to strong bonding between the organic and surface atoms of the QDs, and results in an increase of the quantum yield (QY%). This passivation method is also applicable to CdSe/ZnSe core/shell structures of QDs, due to the passivation of mid-gap defects states at the interface. The QY% of the as-synthesized CdSe QDs is dramatically enhanced by the amino passivation from 37% to 75% and the QY% of the CdSe/ZnSe core/shell QDs is also improved by ˜28%.

Interface architecture between TiO2/perovskite, perovskite/hole transport layer, and perovskite grain boundary(Conference Presentation)

NASA Astrophysics Data System (ADS)

Hayase, Shuzi; Hirotani, Daisuke; Moriya, Masahiro; Ogomi, Yuhei; Shen, Qing; Yoshino, Kenji; Toyoda, Taro

2016-09-01

In order to examine the interface structure of TiO2/perovskite layer, quartz crystal microbalance sensor (QCM) was used. On the QCM sensor, TiO2 layer was fabricated and the PbI2 solution in Dimethylformamide (DMF) was passed on the QCM sensor to estimate the adsorption density of the PbI2 on the titania2. The amount of PbI2 adsorption on TiO2 surface increased as the adsorption time and leveled off at a certain time. PbI2 still remained even after the solvent only (DMF) was passed on the TiO2 layer on QCM (namely rinsing with DMF), suggesting that the PbI2 was tightly bonded on the TiO2 surface. The bonding structure was found to be Ti-O-Pb linkage by XPS analysis. We concluded that the Ti-OH on the surface of TiO2 reacts with I-Pb-I to form Ti-O-Pb-I and HI (Fig.1 B). The surface trap density was measured by thermally stimulated current (TSC) method. Before the PbI2 passivation, the trap density of TiO2 was 1019 cm3. The trap density decreased to 1016/cm3 after the PbI2 passivation, suggesting that the TiO2 surface trap was passivated with I-Pb-I. The passivation density was tuned by the concentration of PbI2 in DMF, by which TiO2 layer was passivated. Perovskite solar cells were fabricated on the passivated TiO2 layer with various PbI2 passivation densities by one step process (mixture of PbI2 + MAI in DMF). It was found that Jsc increased with an increase in the Ti-O-Pb density. We concluded that the interface between TiO2 and perovskite layer has passivation structure consisting of Ti-O-Pb-I which decreases the trap density of the interfaces and supresses charge recombination. The effect of Cl anion on high efficiency is still controversial when perovskite layer is prepared by one step method from the mixture of MAI and PbCl2. It was found that adsorption density of PbCl2 on TiO2 surface was much higher than that of PbI2 from the experiment using QCM sensor. After the surface was washed with DMF, Cl and Pb were detected. These results suggest that the TiO2 surface was much more passivated by PbCl2 than by PbI2. This may explain partially the high efficiency when the perovskite layer was fabricated by one step process consisting of MAI and PbCl2 solution. We also observed that the crystal size increased with an increase in the amount of Cl anion which of course one of the explanation of the high efficiency. The interface of hole transport layer/perovskite layer, and between perovskite layer /perovskite layer (grain boundary) was passivated with organic amines. The passivation was also effective for increasing Voc and Jsc. This was explained by the results of transient absorption spectroscopy that the charge recombination time between hole transport payer/perovskite layer increased from 0.3 μsec to 60 μsec.

Oxygen Reduction Reaction Measurements on Platinum Electrocatalysts Utilizing Rotating Disk Electrode Technique: I. Impact of Impurities, Measurement Protocols and Applied Corrections

DOE PAGES

Shinozaki, Kazuma; Zack, Jason W.; Richards, Ryan M.; ...

2015-07-22

The rotating disk electrode (RDE) technique is being extensively used as a screening tool to estimate the activity of novel PEMFC electrocatalysts synthesized in lab-scale (mg) quantities. Discrepancies in measured activity attributable to glassware and electrolyte impurity levels, as well as conditioning, protocols and corrections are prevalent in the literature. Moreover, the electrochemical response to a broad spectrum of commercially sourced perchloric acid and the effect of acid molarity on impurity levels and solution resistance were also assessed. Our findings reveal that an area specific activity (SA) exceeding 2.0 mA/cm 2 (20 mV/s, 25°C, 100 kPa, 0.1 M HClO 4)more » for polished poly-Pt is an indicator of impurity levels that do not impede the accurate measurement of the ORR activity of Pt based catalysts. After exploring various conditioning protocols to approach maximum utilization of the electrochemical area (ECA) and peak ORR activity without introducing catalyst degradation, an investigation of measurement protocols for ECA and ORR activity was conducted. Down-selected protocols were based on the criteria of reproducibility, duration of experiments, impurity effects and magnitude of pseudo-capacitive background correction. In sum, statistical reproducibility of ORR activity for poly-Pt and Pt supported on high surface area carbon was demonstrated.« less

Specific solubilization of impurities in culture media: Arg solution improves purification of pH-responsive tag CspB50 with Teriparatide.

PubMed

Oki, Shogo; Nonaka, Takahiro; Shiraki, Kentaro

2018-06-01

Protein purification using non-chromatographic methods is a simple technique that avoids costly resin. Recently, a cell surface protein B (CspB) tag has been developed for a pH-responsive tag for protein purification by solid-liquid separation. Proteins fused with the CspB tag show reversible insolubilization at acidic pH that can be used in solid-liquid separation for protein purification. However, brown-color impurities from co-precipitation hamper further analysis of the target proteins. In this study, we investigated the effect of additives on the co-precipitation of CspB-tagged Teriparatide (CspB50TEV-Teriparatide) expressed in Corynebacterium glutamicum and associated impurities. Arginine (Arg) at 1.0 M was found to be the most effective additive for removing impurities, particularly carotenoids and nucleic acids. Furthermore, all impurities detected in the fluorescence and absorbance spectra were successfully removed by the repetition of precipitation-redissolution in the Arg solution. The precipitation yield of the CspB50TEV-Teriparatide did not change with the addition of Arg and the repetition of the precipitation-redissolution process. Collectively, our findings indicate that the specific desorption of π-electron rich compounds by Arg may be useful in conjunction with the pH-responsive CspB tag for solid-liquid protein purification. Copyright © 2018 Elsevier Inc. All rights reserved.

A density functional theory computational study of adsorption of Di-Meta-Cyano Azobenzene molecules on Si (111) surfaces

NASA Astrophysics Data System (ADS)

Motevalli, Benyamin; Taherifar, Neda; Wu, Bisheng; Tang, Wenxin; Liu, Jefferson Zhe

2017-11-01

The adsorption of di-meta-cyano azobenzene (DMC) cis and trans isomers on non-passivated and passivated Si (111) (7 × 7) surfaces is studied using density functional theory (DFT) calculations. Our results reveal that on the non-passivated surface the 12 Si adatoms are accessible to form chemical bonds with DMC molecules. Interestingly, the trans isomer forms two chemical bonds near the corner hole atom in Si (111) (7 × 7) surface, which is not observed in the widely studied metallic surfaces. The DMC isomers show significant structural distortion in the chemisorption case. The strong chemical bonds (and high bonding energy) could be detrimental to conformation switching between these two isomers under external stimuli. The physisorption case is also examined. Monte Carlo (MC) simulations with empirical force fields were employed to search about 106 different adsorption positions and DMC molecule orientations to identify the stable adsorption sites (up to six). The DFT-PBE and DFT-D2 calculations were then carried out to obtain the relaxed atomistic structures and accurate adsorption energy. We find that it is imperative to take van der Waals (vdW) interaction into account in DFT calculations. Our results show that the adsorption sites generally are encompassed by either the Si adatoms or the passivated H atoms, which could enhance the long-range dispersion interaction between DMC molecules and Si surfaces. The molecular structures of both isomers remain unchanged compared with gas phase. The obtained adsorption energy results ΔEads are moderate (0.2-0.8 eV). At some adsorption sites on the passivated surface, both isomers have similar moderate ΔEads (0.4-0.6 eV), implying promises of molecular switching that should be examined in experiments.

Diffusion-coupled cohesive interface simulations of stress corrosion intergranular cracking in polycrystalline materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pu, Chao; Gao, Yanfei; Wang, Yanli

To study the stress corrosion intergranular cracking mechanism, a diffusion-coupled cohesive zone model (CZM) is proposed for the simulation of the stress-assisted diffusional process along grain boundaries and the mechanical response of grain boundary sliding and separation. This simulation methodology considers the synergistic effects of impurity diffusion driven by pressure gradient and degradation of grain boundary strength by impurity concentration. The diffusion-coupled CZM is combined with crystal plasticity finite element model (CPFEM) to simulate intergranular fracture of polycrystalline material under corrosive environment. Significant heterogeneity of the stress field and extensive impurity accumulation is observed at grain boundaries and junction points.more » Deformation mechanism maps are constructed with respect to the grain boundary degradation factor and applied strain rate, which dictate the transition from internal to near-surface intergranular fracture modes under various strain amplitudes and grain sizes.« less

Influence of the local environment on Mn acceptors in GaAs

NASA Astrophysics Data System (ADS)

Lee, Donghun; Gohlke, David; Benjamin, Anne; Gupta, Jay A.

2015-04-01

As transistors continue to shrink toward nanoscale dimensions, their characteristics are increasingly dependent on the statistical variations of impurities in the semiconductor material. The scanning tunneling microscope (STM) can be used to not only study prototype devices with atomically precise placement of impurity atoms, but can also probe how the properties of these impurities depend on the local environment. Tunneling spectroscopy of Mn acceptors in GaAs indicates that surface-layer Mn act as a deep acceptor, with a hole binding energy that can be tuned by positioning charged defects nearby. Band bending induced by the tip or by these defects can also tune the ionization state of the acceptor complex, evident as a ring-like contrast in STM images. The interplay of these effects is explored over a wide range of defect distances, and understood using iterative simulations of tip-induced band bending.

Theory of Raman scattering in coupled electron-phonon systems

NASA Astrophysics Data System (ADS)

Itai, K.

1992-01-01

The Raman spectrum is calculated for a coupled conduction-electron-phonon system in the zero-momentum-transfer limit. The Raman scattering is due to electron-hole excitations and phonons as well. The phonons of those branches that contribute to the electron self-energy and the correction of the electron-phonon vertex are assumed to have flat energy dispersion (the Einstein phonons). The effect of electron-impurity scattering is also incorporated. Both the electron-phonon interaction and the electron-impurity interaction cause the fluctuation of the electron distribution between different parts of the Fermi surface, which results in overdamped zero-sound modes of various symmetries. The scattering cross section is obtained by solving the Bethe-Salpeter equation. The spectrum shows a lower threshold at the smallest Einstein phonon energy when only the electron-phonon interaction is taken into consideration. When impurities are also taken into consideration, the threshold disappears.

Impact of Dust on Mars Surface Albedo and Energy Flux with LMD General Circulation Model

NASA Astrophysics Data System (ADS)

Singh, D.; Flanner, M.; Millour, E.; Martinez, G.

2015-12-01

Mars, just like Earth experience different seasons because of its axial tilt (about 25°). This causes growth and retreat of snow cover (primarily CO2) in Martian Polar regions. The perennial caps are the only place on the planet where condensed H2O is available at surface. On Mars, as much as 30% atmospheric CO2 deposits in each hemisphere depending upon the season. This leads to a significant variation on planet's surface albedo and hence effecting the amount of solar flux absorbed or reflected at the surface. General Circulation Model (GCM) of Laboratoire de Météorologie Dynamique (LMD) currently uses observationally derived surface albedo from Thermal Emission Spectrometer (TES) instrument for the polar caps. These TES albedo values do not have any inter-annual variability, and are independent of presence of any dust/impurity on surface. Presence of dust or other surface impurities can significantly reduce the surface albedo especially during and right after a dust storm. This change will also be evident in the surface energy flux interactions. Our work focuses on combining earth based Snow, Ice, and Aerosol Radiation (SNICAR) model with current state of GCM to incorporate the impact of dust on Martian surface albedo, and hence the energy flux. Inter-annual variability of surface albedo and planet's top of atmosphere (TOA) energy budget along with their correlation with currently available mission data will be presented.

Passivated contact formation using ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Stradins, Pauls; Nemeth, William

2018-05-29

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Spatial and Temporal Variations of Surface Characteristics on the Greenland Ice Sheet as Derived from Passive Microwave Observations

NASA Technical Reports Server (NTRS)

Anderson, Mark; Rowe, Clinton; Kuivinen, Karl; Mote, Thomas

1996-01-01

The primary goals of this research were to identify and begin to comprehend the spatial and temporal variations in surface characteristics of the Greenland ice sheet using passive microwave observations, physically-based models of the snowpack and field observations of snowpack and firn properties.

Internal passivation of Al-based microchannel devices by electrochemical anodization

NASA Astrophysics Data System (ADS)

Hymel, Paul J.; Guan, D. S.; Mu, Yang; Meng, W. J.; Meng, Andrew C.

2015-02-01

Metal-based microchannel devices have wide-ranging applications. We report here a method to electrochemically anodize the internal surfaces of Al microchannels, with the purpose of forming a uniform and dense anodic aluminum oxide (AAO) layer on microchannel internal surfaces for chemical passivation and corrosion resistance. A pulsed electrolyte flow was utilized to emulate conventional anodization processes while replenishing depleted ionic species within Al microtubes and microchannels. After anodization, the AAO film was sealed in hot water to close the nanopores. Focused ion beam (FIB) sectioning, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were utilized to characterize the AAO morphology and composition. Potentiodynamic polarization corrosion testing of anodized Al microtube half-sections in a NaCl solution showed an order of magnitude decrease in anodic corrosion current when compared to an unanodized tube. The surface passivation process was repeated for Al-based microchannel heat exchangers. A corrosion testing method based on the anodization process showed higher resistance to ion transport through the anodized specimens than unanodized specimens, thus verifying the internal anodization and sealing process as a viable method for surface passivation of Al microchannel devices.

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media

PubMed Central

Al-Harbi, Albandaree K.

2018-01-01

The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9)and Fe49Co49V2 (VX50) (at.%), were studied using electrochemical techniques including electrochemical frequency modulation (EFM), electrochemical impedance spectroscopy (EIS) and cyclic polarization (CP) measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution. PMID:29337992

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

PubMed

Emran, Khadijah M; Al-Harbi, Albandaree K

2018-01-01

The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9)and Fe49Co49V2 (VX50) (at.%), were studied using electrochemical techniques including electrochemical frequency modulation (EFM), electrochemical impedance spectroscopy (EIS) and cyclic polarization (CP) measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.

Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment

NASA Astrophysics Data System (ADS)

Jiang, Ye; Shen, Honglie; Pu, Tian; Zheng, Chaofan

2018-04-01

Though black silicon has excellent anti-reflectance property, its passivation is one of the main technical bottlenecks due to its large specific surface area. In this paper, multicrystalline black silicon is fabricated by metal assisted chemical etching, and is rebuilt in low concentration alkali solution. Different solution pre-treatment is followed to make surface modification on black silicon before Al2O3 passivation by atomic layer deposition. HNO3 and H2SO4 + H2O2 solution pre-treatment makes the silicon surface become hydrophilic, with contact angle decrease from 117.28° to about 30°. It is demonstrated that when the pre-treatment solution is nitric acid, formed ultrathin SiO x layer between Al2O3 layer and black silicon is found to increase effective carrier lifetime to 72.64 µs, which is obviously higher than that of the unpassivated black silicon. The passivation stacks of SiO x /Al2O3 are proved to be effective double layers for nanoscaled multicrystalline silicon surface.

Stabilized Lithium-Metal Surface in a Polysulfide-Rich Environment of Lithium-Sulfur Batteries.

PubMed

Zu, Chenxi; Manthiram, Arumugam

2014-08-07

Lithium-metal anode degradation is one of the major challenges of lithium-sulfur (Li-S) batteries, hindering their practical utility as next-generation rechargeable battery chemistry. The polysulfide migration and shuttling associated with Li-S batteries can induce heterogeneities of the lithium-metal surface because it causes passivation by bulk insulating Li2S particles/electrolyte decomposition products on a lithium-metal surface. This promotes lithium dendrite formation and leads to poor lithium cycling efficiency with complicated lithium surface chemistry. Here, we show copper acetate as a surface stabilizer for lithium metal in a polysulfide-rich environment of Li-S batteries. The lithium surface is protected from parasitic reactions with the organic electrolyte and the migrating polysulfides by an in situ chemical formation of a passivation film consisting of mainly Li2S/Li2S2/CuS/Cu2S and electrolyte decomposition products. This passivation film also suppresses lithium dendrite formation by controlling the lithium deposition sites, leading to a stabilized lithium surface characterized by a dendrite-free morphology and improved surface chemistry.

Sensing Coulomb impurities with 1/f noise in 3D Topological Insulator

NASA Astrophysics Data System (ADS)

Bhattacharyya, Semonti; Banerjee, Mitali; Nhalil, Hariharan; Elizabeth, Suja; Ghosh, Arindam

2015-03-01

Electrical transport in the non-trivial surface states of bulk Topological Insulator (TI) reveal several intriguing properties ranging from bipolar field effect transistor action, weak antilocalization in quantum transport, to the recently discovered quantum anomalous Hall effect. Many of these phenomena depend crucially on the nature of disorder and its screening by the Dirac Fermions at the TI surface. We have carried out a systematic study of low-frequency 1/f noise in Bi1.6Sb0.4Te2Se1 single crystals, to explore the dominant source of scattering of surface electrons and monitor relative contributions of the surface and bulk channels. Our results reveal that while trapped coulomb impurities at the substrate-TI interface are dominating source of scattering for thin (10 nm) TI, charged crystal disorder contribute strongly in thick TI (110 nm) channels. An unexpected maximum at 25K in noise from thick TI devices indicate scattering of the surface states by a cooperative charge dynamics in the bulk of the TI, possibly associated with the Selenium vacancies. Our experiment demonstrates, for the first time, impact of the bulk charge distribution on the surface state transport in TIs that could be crucial to the implementation of these materials in electronic applications.

Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

NASA Astrophysics Data System (ADS)

Jia, Xiao-Jie; Zhou, Chun-Lan; Zhu, Jun-Jie; Zhou, Su; Wang, Wen-Jing

2016-12-01

It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Baochen, E-mail: liaobaochen@nus.edu.sg; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576; A*STAR Institute of Materials Research and Engineering

2014-06-23

In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is foundmore » to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.« less

Study of sulfur bonding on gallium arsenide (100) surfaces using supercritical fluid extraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabauy, P.; Darici, Y.; Furton, K.G.

1995-12-01

In the last decades Gallium Arsenide (GaAs) has been considered the semiconductor that will replace silicon because of its direct band gap and high electron mobility. Problems with GaAs Fermi level pinning has halted its widespread use in the electronics industry. The formation of oxides on GaAs results in a high density of surface states that effectively pin the surface Fermi level at the midgap. Studies on sulfur passivation have eliminated oxidation and virtually unpinned the Fermi level on the GaAs surface. This has given rise to interest in sulfur-GaAs bonds. In this presentation, we will discuss the types ofmore » sulfur bonds extracted from a sulfur passivated GaAs (100) using Supercritical Fluid (CO2) Extraction (SFE). SFE can be a valuable tool in the study of chemical speciations on semiconductor surfaces. The variables evaluated to effectively study the sulfur species from the GaAs surface include passivation techniques, supercritical fluid temperatures, densities, and extraction times.« less

Surface correlation behaviors of metal-organic Langmuir-Blodgett films on differently passivated Si(001) surfaces

NASA Astrophysics Data System (ADS)

Bal, J. K.; Kundu, Sarathi

2013-03-01

Langmuir-Blodgett films of standard amphiphilic molecules like nickel arachidate and cadmium arachidate are grown on wet chemically passivated hydrophilic (OH-Si), hydrophobic (H-Si), and hydrophilic plus hydrophobic (Br-Si) Si(001) surfaces. Top surface morphologies and height-difference correlation functions g(r) with in-plane separation (r) are obtained from the atomic force microscopy studies. Our studies show that deposited bilayer and trilayer films have self-affine correlation behavior irrespective of different passivations and different types of amphiphilic molecules, however, liquid like correlation coexists only for a small part of r, which is located near the cutoff length (1/κ) or little below the correlation length ξ obtained from the liquid like and self-affine fitting, respectively. Thus, length scale dependent surface correlation behavior is observed for both types of Langmuir-Blodgett films. Metal ion specific interactions (ionic, covalent, etc.,) in the headgroup and the nature of the terminated bond (polar, nonpolar, etc.,) of Si surface are mainly responsible for having different correlation parameters.

Particle size reduction of Si3N4 with Si3N4 milling hardware

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Freedman, M. R.; Kiser, J. D.

1986-01-01

The grinding of Si3N4 powder using reaction bonded Si3N4 attrition, vibratory, and ball mills with Si3N4 media was examined. The rate of particle size reduction and the change in the chemical composition of the powder were determined in order to compare the grinding efficiency and the increase in impurity content resulting from mill and media wear for each technique. Attrition and vibratory milling exhibited rates of specific surface area increase that were approximately eight times that observed in ball milling. Vibratory milling introduced the greatest impurity pickup.

Minimum activation martensitic alloys for surface disposal after exposure to neutron flux

DOEpatents

Lechtenberg, Thomas

1985-01-01

Steel alloys for long-term exposure to neutron flux have a martensitic microstructure and contain chromium, carbon, tungsten, vanadium and preferably titanium. Activation of the steel is held to within acceptable limits for eventual surface disposal by stringently controlling the impurity levels of Ni, Mo, Cu, N, Co, Nb, Al and Mn.

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

NASA Astrophysics Data System (ADS)

Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

2006-06-01

The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

Local Schottky contacts of embedded Ag nanoparticles in Al2O3/SiNx:H stacks on Si: a design to enhance field effect passivation of Si junctions.

PubMed

Ibrahim Elmi, Omar; Cristini-Robbe, Odile; Chen, Minyu; Wei, Bin; Bernard, Rémy; Okada, Etienne; Yarekha, Dmitri A; Ouendi, Saliha; Portier, Xavier; Gourbilleau, Fabrice; Xu, Tao; Stievenard, Didier

2018-04-26

This paper describes an original design leading to the field effect passivation of Si n+-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al2O3/SiNx:H stacks on the top of implanted Si n+-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag nanoparticles. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts. © 2018 IOP Publishing Ltd.

Swimming in an Unsteady World.

PubMed

Koehl, M A R; Cooper, T

2015-10-01

When animals swim in aquatic habitats, the water through which they move is usually flowing. Therefore, an important part of understanding the physics of how animals swim in nature is determining how they interact with the fluctuating turbulent water currents in their environment. We addressed this issue using microscopic larvae of invertebrates in "fouling communities" growing on docks and ships to ask how swimming affects the transport of larvae between moving water and surfaces from which they disperse and onto which they recruit. Field measurements of the motion of water over fouling communities were used to design realistic turbulent wavy flow in a laboratory wave-flume over early-stage fouling communities. Fine-scale measurements of rapidly-varying water-velocity fields were made using particle-image velocimetry, and of dye-concentration fields (analog for chemical cues from the substratum) were made using planar laser-induced fluorescence. We used individual-based models of larvae that were swimming, passively sinking, passively rising, or were passive and neutrally buoyant to determine how their trajectories were affected by their motion through the water, rotation by local shear, and transport by ambient flow. Swimmers moved up and down in the turbulent flow more than did neutrally buoyant larvae. Although more of the passive sinkers landed on substrata below them, and more passive risers on surfaces above, swimming was the best strategy for landing on surfaces if their location was not predictable (as is true for fouling communities). When larvae moved within 5 mm of surfaces below them, passive sinkers and neutrally-buoyant larvae landed on the substratum, whereas many of the swimmers were carried away, suggesting that settling larvae should stop swimming as they near a surface. Swimming and passively-rising larvae were best at escaping from a surface below them, as precompetent larvae must do to disperse away. Velocities, vorticities, and odor-concentrations encountered by larvae fluctuated rapidly, with peaks much higher than mean values. Encounters with concentrations of odor or with vorticities above threshold increased as larvae neared the substratum. Although microscopic organisms swim slowly, their locomotory behavior can affect where they are transported by the movement of ambient water as well as the signals they encounter when they move within a few centimeters of surfaces. © The Author 2015. Published by Oxford University Press on behalf of the Society for Integrative and Comparative Biology. All rights reserved. For permissions please email: journals.permissions@oup.com.

Ceramic powder for sintering materials

NASA Technical Reports Server (NTRS)

Akiya, H.; Saito, A.

1984-01-01

Surface activity of ceramic powders such as MgO and Al2O3, for use in sintering with sp. emphasis on their particle size, shape, particle size distribution, packing, and coexisting additives and impurities are reviewed.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping.

PubMed

Takenaka, Mitsuru; Morii, Kiyohito; Sugiyama, Masakazu; Nakano, Yoshiaki; Takagi, Shinichi

2012-04-09

We have investigated the dark current of a germanium (Ge) photodetector (PD) with a GeO₂ surface passivation layer and a gas-phase-doped n+/p junction. The gas-phase-doped PN diodes exhibited a dark current of approximately two orders of magnitude lower than that of the diodes formed by a conventional ion implantation process, indicating that gas-phase doping is suitable for low-damage PN junction formation. The bulk leakage (Jbulk) and surface leakage (Jsurf) components of the dark current were also investigated. We have found that GeO₂ surface passivation can effectively suppress the dark current of a Ge PD in conjunction with gas-phase doping, and we have obtained extremely low values of Jbulk of 0.032 mA/cm² and Jsurf of 0.27 μA/cm.

Four passive sampling elements (quatrefoil)--I. Monitoring radon and its progeny by surface-contamination monitors.

PubMed

Tommasino, L; Tokonami, S

2011-05-01

Four passive sampling elements (quatrefoil) have been recently developed, which transform airborne radionuclides into surface-bound radionuclides. These samplers, once exposed, result in thin radiation sources that can be detected by any real-time or passive detector. In particular, by using a large collecting-area sampler with a low surface density (g cm(-2)), it is possible to measure radon and its decay products by beta surface-contamination monitors, which are rarely used for these applications. The results obtained to date prove that it is finally possible to carry out the measurements of radon (and its decay products) indoors, in soil and in water simply by a Pancake Geiger-Muller counter. Emphasis will be given to those measurements, which are difficult, if not impossible, to carry out with existing technologies.

Process and design considerations for high-efficiency solar cells

NASA Technical Reports Server (NTRS)

Rohati, A.; Rai-Choudhury, P.

1985-01-01

This paper shows that oxide surface passivation coupled with optimum multilayer anti-reflective coating can provide approx. 3% (absolute) improvement in solar cell efficiency. Use of single-layer AR coating, without passivation, gives cell efficiencies in the range of 15 to 15.5% on high-quality, 4 ohm-cm as well as 0.1 to 0.2 ohm-cm float-zone silicon. Oxide surface passivation alone raises the cell efficiency to or = 17%. An optimum double-layer AR coating on oxide-passivated cells provides an additional approx. 5 to 10% improvement over a single-layer AR-coated cell, resulting in cell efficiencies in excess of 18%. Experimentally observed improvements are supported by model calculations and an approach to or = 20% efficient cells is discussed.

Development of a 1.5D plasma transport code for coupling to full orbit runaway electron simulations

NASA Astrophysics Data System (ADS)

Lore, J. D.; Del Castillo-Negrete, D.; Baylor, L.; Carbajal, L.

2017-10-01

A 1.5D (1D radial transport + 2D equilibrium geometry) plasma transport code is being developed to simulate runaway electron generation, mitigation, and avoidance by coupling to the full-orbit kinetic electron transport code KORC. The 1.5D code solves the time-dependent 1D flux surface averaged transport equations with sources for plasma density, pressure, and poloidal magnetic flux, along with the Grad-Shafranov equilibrium equation for the 2D flux surface geometry. Disruption mitigation is simulated by introducing an impurity neutral gas `pellet', with impurity densities and electron cooling calculated from ionization, recombination, and line emission rate coefficients. Rapid cooling of the electrons increases the resistivity, inducing an electric field which can be used as an input to KORC. The runaway electron current is then included in the parallel Ohm's law in the transport equations. The 1.5D solver will act as a driver for coupled simulations to model effects such as timescales for thermal quench, runaway electron generation, and pellet impurity mixtures for runaway avoidance. Current progress on the code and details of the numerical algorithms will be presented. Work supported by the US DOE under DE-AC05-00OR22725.

Designing Quantum Spin-Orbital Liquids in Artificial Mott Insulators

DOE PAGES

Dou, Xu; Kotov, Valeri N.; Uchoa, Bruno

2016-08-24

Quantum spin-orbital liquids are elusive strongly correlated states of matter that emerge from quantum frustration between spin and orbital degrees of freedom. A promising route towards the observation of those states is the creation of artificial Mott insulators where antiferromagnetic correlations between spins and orbitals can be designed. We show that Coulomb impurity lattices on the surface of gapped honeycomb substrates, such as graphene on SiC, can be used to simulate SU(4) symmetric spin-orbital lattice models. We exploit the property that massive Dirac fermions form mid-gap bound states with spin and valley degeneracies in the vicinity of a Coulomb impurity.more » Due to electronic repulsion, the antiferromagnetic correlations of the impurity lattice are driven by a super-exchange interaction with SU(4) symmetry, which emerges from the bound states degeneracy at quarter filling. We propose that quantum spin-orbital liquids can be engineered in artificially designed solid-state systems at vastly higher temperatures than achievable in optical lattices with cold atoms. Lastly, we discuss the experimental setup and possible scenarios for candidate quantum spin-liquids in Coulomb impurity lattices of various geometries.« less

Forest Fires Darken Snow for Years following Disturbance: Magnitude, Duration, and Composition of Light Absorbing Impurities in Seasonal Snow across a Chronosequence of Burned Forests in the Colorado River Headwaters

NASA Astrophysics Data System (ADS)

Gleason, K. E.; Arienzo, M. M.; Chellman, N.; McConnell, J.

2017-12-01

Charred forests shed black carbon and burned debris, which accumulates and concentrates on winter snowpack, reducing snow surface albedo, and subsequently increasing snowmelt rates, and advancing the date of snow disappearance. Forest fires have occurred across vast areas of the seasonal snow zone in recent decades, however we do not understand the long-term implications of burned forests in montane headwaters to snow hydrology and downstream water resources. Across a chronosequence of nine burned forests in the Colorado River Headwaters, we sampled snow throughout the complete snowpack profile to conserve the composition, properties, and vertical stratigraphy of impurities in the snowpack during maximum snow accumulation. Using state-of-the-art geochemical analyses, we determined the magnitude, composition, and particle size distribution of black carbon, dust, and other impurities in the snowpack relative to years-since fire. Forest fires continue to darken snow for many years following fire, however the magnitude, composition, and particle size distribution of impurities change through time, altering the post-fire radiative forcing on snow as a burned forest ages.

Advances in satellite oceanography

NASA Technical Reports Server (NTRS)

Brown, O. B.; Cheney, R. E.

1983-01-01

Technical advances and recent applications of active and passive satellite remote sensing techniques to the study of oceanic processes are summarized. The general themes include infrared and visible radiometry, active and passive microwave sensors, and buoy location systems. The surface parameters of sea surface temperature, windstream, sea state, altimetry, color, and ice are treated as applicable under each of the general methods.

Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors.

PubMed

Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

2013-05-21

The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.

The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

PubMed

Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

2015-12-09

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

PubMed

Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

2015-05-20

In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

Parameters influencing the course of passive drug loading into lipid nanoemulsions.

PubMed

Göke, Katrin; Bunjes, Heike

2018-05-01

Passive drug loading can be used to effectively identify suitable colloidal lipid carrier systems for poorly water-soluble drugs. This method comprises incubation of preformed carrier systems with drug powder and subsequent determination of the resulting drug load of the carrier particles. Until now, the passive loading mechanism is unknown, which complicates reliable routine use. In this work, the influence of drug characteristics on the course of passive loading was investigated systematically varying drug surface area and drug solubility. Fenofibrate and flufenamic acid were used as model drugs; the carrier system was a trimyristin nanodispersion. Loading progress was analyzed by UV spectroscopy or by a novel method based on differential scanning calorimetry. While increasing drug solubility by micelle incorporation did not speed up passive loading, a large drug surface area and high water solubility were key parameters for fast loading. Since both factors are crucial in drug dissolution as described by the Noyes-Whitney equation, these findings point to a dissolution-diffusion-based passive loading mechanism. Accordingly, passive loading also occurred when drug and carrier particles were separated by a dialysis membrane. Knowledge of the loading mechanism allows optimizing the conditions for future passive loading studies and assessing the limitations of the method. Copyright © 2017 Elsevier B.V. All rights reserved.

Object representation and magnetic moments in thin alkali films

NASA Astrophysics Data System (ADS)

Garrett, Douglas C.

2008-10-01

This thesis is broken into two parts a computer vision part and a solid state physics part. In the computer vision part of the thesis (chapters 1 through 5), the concept of an architecture is discussed with a review of what is known about the brain's visual architecture as it applies to object representation. With this in mind we review the two main types of architectures that are used in computer vision for object representation. A specific object representation is then implemented and optimized to solve a problem in object tracking. This representation is then used to derive the fiducial points of a face using two distinct methods. One using evolutionary algorithms and another by a Bayesian analysis of the feature responses drawn from a gallery of faces. The evolved fiducial representation is tested as a facial detection system. It is shown that the Bayesian analysis of facial images gives an entropy measure that can be used to further improve detection results in the facial detection system. In addition, two similarity metrics are explored in the context of facial detection. It is found that a normalized vector dot product substantially outperforms the Euclidean distance measure. The solid state part of the thesis is composed of two self contained chapters. An effort has been made to reduce the redundancies between the material but some will necessarily remain (i.e., short descriptions of the experimental setup). Both chapters deal with the phenomenon of magnetism of atomic impurities in and on thin metal host films. The important difference between the chapters, besides the results, lies in the experimental technique used to measure the magnetism. In chapter 6, thin films of Pb are covered in situ with sub monolayers of V, Mo and Co in the range between 0.01 and 1 monolayers. If the surface impurities are magnetic they will reduce the superconducting transition temperature of the Pb film. From the reduction of Tc the magnetic dephasing rate of the surface impurities 1/taus and their magnetic cross section sigmas are calculated. We find that single V surface impurities are magnetic while single Mo and Co impurities are non-magnetic. Co surface clusters are magnetic. In chapter 7, thin films of Na, K, Rb and Cs are quench condensed, then covered with 1/100 of a mono-layer of Ti and finally covered with the original host. The magnetization of the films is measured by means of the anomalous Hall effect. An anomalous Hall resistance RAHE is observed for Ti on the surface of K, Rb and Cs and for Ti inside of Cs. Essentially the RAHE varies linearly with the magnetic field and is inversely proportional to the inverse temperature. A small non-linearity of RAHE suggests a Ti moment of about 1microB.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

Temperatures Achieved in Human and Canine Neocortex During Intraoperative Passive or Active Focal Cooling

PubMed Central

Han, Rowland H.; Yarbrough, Chester K.; Patterson, Edward E.; Yang, Xiao-Feng; Miller, John W.; Rothman, Steven M.; D'Ambrosio, Raimondo

2015-01-01

Focal cortical cooling inhibits seizures and prevents acquired epileptogenesis in rodents. To investigate the potential clinical utility of this treatment modality, we examined the thermal characteristics of canine and human brain undergoing active and passive surface cooling in intraoperative settings. Four patients with intractable epilepsy were treated in a standard manner. Before the resection of a neocortical epileptogenic focus, multiple intraoperative studies of active (custom-made cooled irrigation-perfused grid) and passive (stainless steel probe) cooling were performed. We also actively cooled the neocortices of two dogs with perfused grids implanted for 2 hours. Focal surface cooling of the human brain causes predictable depth-dependent cooling of the underlying brain tissue. Cooling of 0.6–2°C was achieved both actively and passively to a depth of 10–15 mm from the cortical surface. The perfused grid permitted comparable and persistent cooling of canine neocortex when the craniotomy was closed. Thus, the human cortex can easily be cooled with the use of simple devices such as a cooling grid or a small passive probe. These techniques provide pilot data for the design of a permanently implantable device to control intractable epilepsy. PMID:25902001

Surface Passivation in Empirical Tight Binding

NASA Astrophysics Data System (ADS)

He, Yu; Tan, Yaohua; Jiang, Zhengping; Povolotskyi, Michael; Klimeck, Gerhard; Kubis, Tillmann

2016-03-01

Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameters. This method is applied to a Si quantum well and a Si ultra-thin body transistor oxidized with SiO2 in several oxidation configurations. Comparison with ab-initio results and experiments verifies the presented method. Oxidation configurations that severely hamper the transistor performance are identified. It is also shown that the commonly used implicit H atom passivation overestimates the transistor performance.

The Effects of Acid Passivation, Tricresyl Phosphate Presoak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

NASA Technical Reports Server (NTRS)

Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar; Jansen, Mark J.

2001-01-01

The boundary-lubrication performance of two perfluoropolyether (PFPE) thin films in the presence of passivated 440C stainless steel is presented. The study used a standard ball on disk (BoD) tribometer in dry nitrogen and a vacuum spiral orbit tribometer (SOT). Stainless steel surfaces were passivated with one of four techniques: high and low temperature chromic acid bath, a tricresyl phosphate (TCP) soak, or UV/Ozone treated for 15 min. After passivation, each BoD disk had a 400A film of Krytox 16256 (PFPE) applied to it. The lifetimes of these films were quantified by measuring the number of sliding cycles before an increase in friction occurred. The lubricated lifetime of the 440C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray photoelectron spectroscopy (XPS). The SOT was used to examine the effects of the TCP treatment on the lubricated lifetime of another PFPE, Brayco 815Z, under rolling conditions. None of the passivation techniques were found to dramatically increase the oxide film thickness or lubricated lifetimes.

Enhancing Efficiency of Perovskite Solar Cells via Surface Passivation with Graphene Oxide Interlayer.

PubMed

Li, Hao; Tao, Leiming; Huang, Feihong; Sun, Qiang; Zhao, Xiaojuan; Han, Junbo; Shen, Yan; Wang, Mingkui

2017-11-08

Perovskite solar cells have been demonstrated as promising low-cost and highly efficient next-generation solar cells. Enhancing V OC by minimization the interfacial recombination kinetics can further improve device performance. In this work, we for the first time reported on surface passivation of perovskite layers with chemical modified graphene oxides, which act as efficient interlayer to reduce interfacial recombination and enhance hole extraction as well. Our modeling points out that the passivation effect mainly comes from the interaction between functional group (4-fluorophenyl) and under-coordinated Pb ions. The resulting perovskite solar cells achieved high efficient power conversion efficiency of 18.75% with enhanced high open circuit V OC of 1.11 V. Ultrafast spectroscopy, photovoltage/photocurrent transient decay, and electronic impedance spectroscopy characterizations reveal the effective passivation effect and the energy loss mechanism. This work sheds light on the importance of interfacial engineering on the surface of perovskite layers and provides possible ways to improve device efficiency.

In situ-synthesized cadmium sulfide nanowire photosensor with a parylene passivation layer for chemiluminescent immunoassays.

PubMed

Im, Ju-Hee; Kim, Hong-Rae; An, Byoung-Gi; Chang, Young Wook; Kang, Min-Jung; Lee, Tae-Geol; Son, Jin Gyeng; Park, Jae-Gwan; Pyun, Jae-Chul

2017-06-15

The direct in situ synthesis of cadmium sulfide (CdS) nanowires (NWs) was presented by direct synthesis of CdS NWs on the gold surface of an interdigitated electrode (IDE). In this work, we investigated the effect of a strong oxidant on the surfaces of the CdS NWs using X-ray photoelectron spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry. We also fabricated a parylene-C film as a surface passivation layer for in situ-synthesized CdS NW photosensors and investigated the influence of the parylene-C passivation layer on the photoresponse during the coating of parylene-C under vacuum using a quartz crystal microbalance and a photoanalyzer. Finally, we used the in situ-synthesized CdS NW photosensor with the parylene-C passivation layer to detect the chemiluminescence of horseradish peroxidase and luminol and applied it to medical detection of carcinoembryonic antigen. Copyright © 2017 Elsevier B.V. All rights reserved.

Passivation of Si(111) surfaces with electrochemically grafted thin organic films

NASA Astrophysics Data System (ADS)

Roodenko, K.; Yang, F.; Hunger, R.; Esser, N.; Hinrichs, K.; Rappich, J.

2010-09-01

Ultra thin organic films (about 5 nm thick) of nitrobenzene and 4-methoxydiphenylamine were deposited electrochemically on p-Si(111) surfaces from benzene diazonium compounds. Studies based on atomic force microscopy, infrared spectroscopic ellipsometry and x-ray photoelectron spectroscopy showed that upon exposure to atmospheric conditions the oxidation of the silicon interface proceed slower on organically modified surfaces than on unmodified hydrogen passivated p-Si(111) surfaces. Effects of HF treatment on the oxidized organic/Si interface and on the organic layer itself are discussed.

Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride

NASA Astrophysics Data System (ADS)

Tong, Jingnan; To, Alexander; Lennon, Alison; Hoex, Bram

2017-08-01

Silicon nitride (SiN x ) synthesised by low-temperature plasma enhanced chemical vapour deposition (PECVD) is the most extensively used antireflection coating for crystalline silicon solar cells because of its tunable refractive index in combination with excellent levels of surface and bulk passivation. This has attracted a significant amount of research on developing SiN x films towards an optimal electrical and optical performance. Typically, recipes are first optimised in lab-scale reactors and subsequently, the best settings are transferred to high-throughput reactors. In this paper, we show that for one particular, but widely used, PECVD reactor configuration this upscaling is severely hampered by an important experimental artefact. Specifically, we report on the unintentional deposition of a dual layer structure in a dual mode AK 400 plasma reactor from Roth & Rau which has a significant impact on its surface passivation performance. It is found that the radio frequency (RF) substrate bias ignites an unintentional depositing plasma before the ignition of the main microwave (MW) plasma. This RF plasma deposits a Si-rich intervening SiN x layer (refractive index = 2.4) while using a recipe for stoichiometric SiN x . This layer was found to be 18 nm thick in our case and had an extraordinary impact on the Si surface passivation, witnessed by a reduction in effective surface recombination velocity from 22.5 to 6.2 cm/s. This experimental result may explain some “out of the ordinary” excellent surface passivation results reported recently for nearly stoichiometric SiN x films and has significant consequences when transferring these results to high-throughput deposition systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Girsova, S. L., E-mail: llm@ispms.tsc.ru; Meisner, L. L., E-mail: girs@ispms.tsc.ru

The structure of the surface and near-surface layers of single crystals of NiTi, differently oriented relative to the direction of ion beam treatment was investigated. The role of the crystallographic orientation in formation of structure of surface layers after ion-plasma alloying was revealed. It was found that the orientation effects of selective sputtering and channeling determine the thickness of the oxide and amorphous layers, the depth of penetration of ions and impurities, the distribution of Ni with depth.

Field tests of 2- and 40-tube condensers at the East Mesa Geothermal Test Site

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, R.W.; Domingo, N.

1982-05-01

Two water-cooled isobutane condensers, one with 2 tubes and one with 40 tubes, were subjected to field tests at the East Mesa Geothermal Test Site to assess relative heat transfer performance in both surface evaporator and direct-contact evaporator modes. The five groups of tests established that field performance was below earlier laboratory-determined levels and that direct-contact evaporator mode performance was poorer than that for the surface evaporator mode. In all test situations, fluted condenser tubes performed better than smooth condenser tubes. Cooling water quality had no significant effect on performance, but brine preflash in the direct-contact mode did promote somemore » relative performance improvement. Important implications of these results for binary geothermal power plants are that (1) working-fluid-side impurities can significantly degrade heat transfer performance of the power plant condensers and (2) provisions for minimizing such impurities may be required.« less

High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

2008-11-01

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

Surface design for controlled crystallization: the role of surface chemistry and nanoscale pores in heterogeneous nucleation.

PubMed

Diao, Ying; Myerson, Allan S; Hatton, T Alan; Trout, Bernhardt L

2011-05-03

Current industrial practice for control of primary nucleation (nucleation from a system without pre-existing crystalline matter) during crystallization from solution involves control of supersaturation generation, impurity levels, and solvent composition. Nucleation behavior remains largely unpredictable, however, due to the presence of container surfaces, dust, dirt, and other impurities that can provide heterogeneous nucleation sites, thus making the control and scale-up of processes that depend on primary nucleation difficult. To develop a basis for the rational design of surfaces to control nucleation during crystallization from solution, we studied the role of surface chemistry and morphology of various polymeric substrates on heterogeneous nucleation using aspirin as a model compound. Nucleation induction time statistics were utilized to investigate and quantify systematically the effectiveness of polymer substrates in inducing nucleation. The nucleation induction time study revealed that poly(4-acryloylmorpholine) and poly(2-carboxyethyl acrylate), each cross-linked by divinylbenzene, significantly lowered the nucleation induction time of aspirin while the other polymers were essentially inactive. In addition, we found the presence of nanoscopic pores on certain polymer surfaces led to order-of-magnitude faster aspirin nucleation rates when compared with surfaces without pores. We studied the preferred orientation of aspirin crystals on polymer films and found the nucleation-active polymer surfaces preferentially nucleated the polar facets of aspirin, guided by hydrogen bonds. A model based on interfacial free energies was also developed which predicted the same trend of polymer surface nucleation activities as indicated by the nucleation induction times.

Effective surface passivation of multi-shelled InP quantum dots through a simple complexing with titanium species

NASA Astrophysics Data System (ADS)

Jo, Jung-Ho; Kim, Min-Seok; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

2018-01-01

Fluorescent efficiency of various visible quantum dots (QDs) has been incessantly improved to meet industrially high standard mainly through the advance in core/shell heterostructural design, however, their stability against degradable environments appears still lacking. The most viable strategy to cope with this issue was to exploit chemically inert oxide phases to passivate QD surface in the form of either individual overcoating or matrix embedding. Herein, we report a simple but effective means to passivate QD surface by complexing its organic ligands with a metal alkoxide of titanium isopropoxide (Ti(i-PrO)4). For this, highly efficient red-emitting InP QDs with a multi-shell structure of ZnSeS intermediate plus ZnS outer shell are first synthesized and then the surface of resulting InP/ZnSeS/ZnS QDs is in-situ decorated with Ti(i-PrO)4. The presence of Tisbnd O species from Ti(i-PrO)4 on QD surface is verified by x-ray photoelectron and Fourier transform infrared spectroscopic analyses. Two comparative dispersions of pristine versus Ti(i-PrO)4-complexed QDs are exposed for certain periods of time to UV photon and heat and their temporal changes in photoluminescence are monitored, resulting in a huge improvement in QD stability from the latter ones through Ti(i-PrO)4-mediated better surface passivation.

Local Fine Structural Insight into Mechanism of Electrochemical Passivation of Titanium.

PubMed

Wang, Lu; Yu, Hongying; Wang, Ke; Xu, Haisong; Wang, Shaoyang; Sun, Dongbai

2016-07-20

Electrochemically formed passive film on titanium in 1.0 M H2SO4 solution and its thickness, composition, chemical state, and local fine structure are examined by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and X-ray absorption fine structure. AES analysis reveals that the thickness and composition of oxide film are proportional to the reciprocal of current density in potentiodynamic polarization. XPS depth profiles of the chemical states of titanium exhibit the coexistence of various valences cations in the surface. Quantitative X-ray absorption near edge structure analysis of the local electronic structure of the topmost surface (∼5.0 nm) shows that the ratio of [TiO2]/[Ti2O3] is consistent with that of passivation/dissolution of electrochemical activity. Theoretical calculation and analysis of extended X-ray absorption fine structure spectra at Ti K-edge indicate that both the structures of passivation and dissolution are distorted caused by the appearance of two different sites of Ti-O and Ti-Ti. And the bound water in the topmost surface plays a vital role in structural disorder confirmed by XPS. Overall, the increase of average Ti-O coordination causes the electrochemical passivation, and the dissolution is due to the decrease of average Ti-Ti coordination. The structural variations of passivation in coordination number and interatomic distance are in good agreement with the prediction of point defect model.

THE EFFECTS OF POLARIZATION UPON THE STEEL WIRE-NITRIC ACID MODEL OF NERVE ACTIVITY.

PubMed

Bishop, G H

1927-11-20

The active process in a short length of steel wire passivated by 65 per cent nitric acid has been observed under the influence of a polarizing current, and the form of the potential recorded by the cathode ray oscillograph. In the passive wire, 80 per cent of the total potential drop takes place at the anode, 20 per cent at the cathode. The change from active to passive states, as measured by the potential change, is very abrupt compared to the duration of activity and the potential curve at a point on the wire is probably almost rectangular. The duration of the refractory state is decreased at the anode and increased at the cathode, as in nerve. This fact is against the idea that reactivity after passivation results from a partial reduction of an oxide layer. Soft iron wire passivated by anodal polarization repassivates after activation in acid of a dilution that fails to passivate it initially. It soon becomes rhythmic with a very short refractory phase, and then reacts continuously. Such a wire exhibits a very sharp alternation between a dark brown oxide coat during activity, and a bright clean surface during passivation. A passive steel wire in nitric acid shows many of the characteristics of an inert electrode such as platinum, and it may be inferred that, superposed upon the primary passivation potential, there exists an electrode or oxidation-reduction potential equilibrium between the effects of the various constituents of the solution. It is suggested that the phenomena of nerve-like reactivity in this system may involve an alternation between two protective coatings of the steel wire. During activity, the surface becomes mechanically coated with a brown oxide. If this coating does not adhere, due to gas convection or to rapid solution of the oxide, passivation does not result. Under sufficiently intense oxidizing conditions, a second oxide coat may form in the interstices of the first, and cover the surface as the first coating dissolves off. This furnishes the electrochemical protection of passivation, which is followed by the gradual attainment of electrode equilibrium with the solution.

THE EFFECTS OF POLARIZATION UPON THE STEEL WIRE-NITRIC ACID MODEL OF NERVE ACTIVITY

PubMed Central

Bishop, George H.

1927-01-01

The active process in a short length of steel wire passivated by 65 per cent nitric acid has been observed under the influence of a polarizing current, and the form of the potential recorded by the cathode ray oscillograph. In the passive wire, 80 per cent of the total potential drop takes place at the anode, 20 per cent at the cathode. The change from active to passive states, as measured by the potential change, is very abrupt compared to the duration of activity and the potential curve at a point on the wire is probably almost rectangular. The duration of the refractory state is decreased at the anode and increased at the cathode, as in nerve. This fact is against the idea that reactivity after passivation results from a partial reduction of an oxide layer. Soft iron wire passivated by anodal polarization repassivates after activation in acid of a dilution that fails to passivate it initially. It soon becomes rhythmic with a very short refractory phase, and then reacts continuously. Such a wire exhibits a very sharp alternation between a dark brown oxide coat during activity, and a bright clean surface during passivation. A passive steel wire in nitric acid shows many of the characteristics of an inert electrode such as platinum, and it may be inferred that, superposed upon the primary passivation potential, there exists an electrode or oxidation-reduction potential equilibrium between the effects of the various constituents of the solution. It is suggested that the phenomena of nerve-like reactivity in this system may involve an alternation between two protective coatings of the steel wire. During activity, the surface becomes mechanically coated with a brown oxide. If this coating does not adhere, due to gas convection or to rapid solution of the oxide, passivation does not result. Under sufficiently intense oxidizing conditions, a second oxide coat may form in the interstices of the first, and cover the surface as the first coating dissolves off. This furnishes the electrochemical protection of passivation, which is followed by the gradual attainment of electrode equilibrium with the solution. PMID:19872388

Protein immobilization on the surface of polydimethylsiloxane and polymethyl methacrylate microfluidic devices.

PubMed

Khnouf, Ruba; Karasneh, Dina; Albiss, Borhan Aldeen

2016-02-01

PDMS and PMMA are two of the most used polymers in the fabrication of lab-on-chip or microfluidic devices. In order to use these polymers in biological applications, it is sometimes essential to be able to bind biomolecules such as proteins and DNA to the surface of these materials. In this work, we have evaluated a number of processes that have been developed to bind protein to PDMS surfaces which include passive adsorption, passive adsorption with glutaraldehyde cross-linking, (3-aminopropyl) triethoxysilane functionalization followed by glutaraldehyde or 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride cross-linkers. It has been shown that the latter technique--using 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride--results in more than twice the bonding of protein to the surface of PDMS microchannels than proteins binding passively. We have also evaluated a few techniques that have been tested for the functionalization of PMMA microchannels where we have found that the use of polyethyleneimine (PEI) has led to the strongest protein-PMMA microchannel bond. We finally demonstrated the effect of PDMS curing methodology on protein adsorption to its surface, and showed that increased curing time is the factor that reduces passive adsorption the most. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light-absorbing impurities in a southern Tibetan Plateau glacier: Variations and potential impact on snow albedo and radiative forcing

NASA Astrophysics Data System (ADS)

Li, Xiaofei; Kang, Shichang; Zhang, Guoshuai; Qu, Bin; Tripathee, Lekhendra; Paudyal, Rukumesh; Jing, Zhefan; Zhang, Yulan; Yan, Fangping; Li, Gang; Cui, Xiaoqing; Xu, Rui; Hu, Zhaofu; Li, Chaoliu

2018-02-01

Light-absorbing impurities (LAIs), such as organic carbon (OC), black carbon (BC), and mineral dust (MD), deposited on the surface snow of glacier can reduce the surface albedo. As there exists insufficient knowledge to completely characterize LAIs variations and difference in LAIs distributions, it is essential to investigate the behaviors of LAIs and their influence on the glaciers across the Tibetan Plateau (TP). Therefore, surface snow and snowpit samples were collected during September 2014 to September 2015 from Zhadang (ZD) glacier in the southern TP to investigate the role of LAIs in the glacier. LAIs concentrations were observed to be higher in surface aged snow than in the fresh snow possibly due to post-depositional processes such as melting or sublimation. The LAIs concentrations showed a significant spatial distribution and marked negative relationship with elevation. Impurity concentrations varied significantly with depth in the vertical profile of the snowpit, with maximum LAIs concentrations frequently occurred in the distinct dust layers which were deposited in non-monsoon, and the bottom of snowpit due to the eluviation in monsoon. Major ions in snowpit and backward trajectory analysis indicated that regional activities and South Asian emissions were the major sources. According to the SNow ICe Aerosol Radiative (SNICAR) model, the average simulated albedo caused by MD and BC in aged snow collected on 31 May 2015 accounts for about 13% ± 3% and 46% ± 2% of the albedo reduction. Furthermore, we also found that instantaneous RF caused by MD and BC in aged snow collected on 31 May 2015 varied between 4-16 W m- 2 and 7-64 W m- 2, respectively. The effect of BC exceeds that of MD on albedo reduction and instantaneous RF in the study area, indicating that BC played a major role on the surface of the ZD glacier.

A molecular model for ice nucleation and growth, attachment 1

NASA Technical Reports Server (NTRS)

Plummer, P. L. M.

1981-01-01

The quantum mechanical technique is used to study ionic, configurational, and impurity defects in the ice surface. In addition to static calculations of the energetics of the water monomer-ice surface interactions, molecular dynamics studies were initiated. The calculations of the monomer-ice surface interaction, molecular dynamics studies were initiated. The calculations of monomer-ice surface interactions indicate that many adsorption sites exist on the ice surfaces and that the barriers between bonding sites are relatively low. Bonding on the prism face of ice is preferentially above lattice sites.

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation.

PubMed

Zhou, D; Xu, T; Lambert, Y; Cristini-Robbe; Stiévenard, D

2015-12-01

The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the key technological processes to significantly decrease the surface recombination and improve the electrical properties of nanostructured n(+)-i-p junctions. Nanostructured surface is fabricated by nanosphere lithography in a low-cost and controllable approach. Furthermore, it has been demonstrated that the successive annealing of silicon nitride films has significant effect on the passivation quality, resulting in some improvements on the efficiency of the Si nanostructure-based solar cell device.

Effect of Ultraviolet Light Irradiation on Structure and Electrochemical Properties of Iron Surface

NASA Astrophysics Data System (ADS)

Nanjo, Hiroshi; Deng, Huihua; Oconer, Irmin S.; Ishikawa, Ikuo; Suzuki, Toshishige M.

2005-01-01

The effect of ultraviolet light (UV) irradiation (254 nm, 0.8 mW/cm2) on air-formed oxide films and passivated films on iron was investigated by electrochemical methods and scanning tunneling microscopy (STM), in particular with respect to surface micro/nanostructures and the surface protective property. An as-deposited film appeared uniformly flat after UV irradiation for 2-4 h, which is associated with a decrease in current density. UV irradiation for 1-4 h assisted N-dodecylhydroxamic acid (DHA) molecules to strongly bond to the air-formed oxide film. UV irradiation for 1 h led to the formation of a flat terrace of atomic resolution on a surface passivated at 800 mV for 15 min. However, it was difficult to observe a terrace wider than 3 nm on the passive film irradiated for 4 h.

Wireless SAW passive tag temperature measurement in the collision case

NASA Astrophysics Data System (ADS)

Sorokin, A.; Shepeta, A.; Wattimena, M.

2018-04-01

This paper describes temperature measurement in the multisensor systems based on the radio-frequency identification SAW passive tags which are currently applied in the electric power systems and the switchgears. Different approaches of temperature measurement in the collision case are shown here. The study is based on the tag model with specific topology, which allows us to determine temperature through the response signal with time-frequency information. This research considers the collision case for several passive tags as the temperature sensors which are placed in the switchgear. This research proposal is to analyze the possibility of using several SAW passive sensors in the collision case. We consider the using of the different typical elements for passive surface acoustic wave tag which applies as an anticollision passive sensor. These wireless sensors based on the surface acoustic waves tags contain specifically coded structures. This topology makes possible the reliability of increasing tag identification and the temperature measurement in the collision case. As the results for this case we illustrate simultaneous measurement of at least six sensors.

Research of polishing process to control the iron contamination on the magnetorheological finished KDP crystal surface.

PubMed

Chen, Shaoshan; Li, Shengyi; Peng, Xiaoqiang; Hu, Hao; Tie, Guipeng

2015-02-20

A new nonaqueous and abrasive-free magnetorheological finishing (MRF) method is adopted for processing a KDP crystal. MRF polishing is easy to result in the embedding of carbonyl iron (CI) powders; meanwhile, Fe contamination on the KDP crystal surface will affect the laser induced damage threshold seriously. This paper puts forward an appropriate MRF polishing process to avoid the embedding. Polishing results show that the embedding of CI powders can be avoided by controlling the polishing parameters. Furthermore, on the KDP crystal surface, magnetorheological fluids residua inevitably exist after polishing and in which the Fe contamination cannot be removed completely by initial ultrasonic cleaning. To solve this problem, a kind of ion beam figuring (IBF) polishing is introduced to remove the impurity layer. Then the content of Fe element contamination and the depth of impurity elements are measured by time of flight secondary ion mass spectrometry. The measurement results show that there are no CI powders embedding in the MRF polished surface and no Fe contamination after the IBF polishing process, respectively. That verifies the feasibility of MRF polishing-IBF polishing (cleaning) for processing a KDP crystal.

Friedel oscillation near a van Hove singularity in two-dimensional Dirac materials

NASA Astrophysics Data System (ADS)

Lu, Chi-Ken

2016-02-01

We consider Friedel oscillation in the two-dimensional Dirac materials when the Fermi level is near the van Hove singularity. Twisted graphene bilayer and the surface state of topological crystalline insulator are the representative materials which show low-energy saddle points that are feasible to probe by gating. We approximate the Fermi surface near saddle point with a hyperbola and calculate the static Lindhard response function. Employing a theorem of Lighthill, the induced charge density δ n due to an impurity is obtained and the algebraic decay of δ n is determined by the singularity of the static response function. Although a hyperbolic Fermi surface is rather different from a circular one, the static Lindhard response function in the present case shows a singularity similar with the response function associated with circular Fermi surface, which leads to the δ n\\propto {{R}-2} at large distance R. The dependences of charge density on the Fermi energy are different. Consequently, it is possible to observe in twisted graphene bilayer the evolution that δ n\\propto {{R}-3} near Dirac point changes to δ n\\propto {{R}-2} above the saddle point. Measurements using scanning tunnelling microscopy around the impurity sites could verify the prediction.

Experimental Studies of the Effects of Anode Composition and Process Parameters on Anode Slime Adhesion and Cathode Copper Purity by Performing Copper Electrorefining in a Pilot-Scale Cell

NASA Astrophysics Data System (ADS)

Zeng, Weizhi; Wang, Shijie; Free, Michael L.

2016-10-01

Copper electrorefining tests were conducted in a pilot-scale cell under commercial tankhouse environment to study the effects of anode compositions, current density, cathode blank width, and flow rate on anode slime behavior and cathode copper purity. Three different types of anodes (high, mid, and low impurity levels) were used in the tests and were analyzed under SEM/EDS. The harvested copper cathodes were weighed and analyzed for impurities concentrations using DC Arc. The adhered slimes and released slimes were collected, weighed, and analyzed for compositions using ICP. It was shown that the lead-to-arsenic ratio in the anodes affects the sintering and coalescence of slime particles. High current density condition can improve anode slime adhesion and cathode purity by intensifying slime particles' coalescence and dissolving part of the particles. Wide cathode blanks can raise the anodic current densities significantly and result in massive release of large slime particle aggregates, which are not likely to contaminate the cathode copper. Low flow rate can cause anode passivation and increase local temperatures in front of the anode, which leads to very intense sintering and coalescence of slime particles. The results and analyses of the tests present potential solutions for industrial copper electrorefining process.

Overview of recent HL-2A experiments

NASA Astrophysics Data System (ADS)

Duan, X. R.; Liu, Yi; Xu, M.; Yan, L. W.; Xu, Y.; Song, X. M.; Dong, J. Q.; Ding, X. T.; Chen, L. Y.; Lu, B.; Liu, D. Q.; Rao, J.; Xuan, W. M.; Yang, Q. W.; Zheng, G. Y.; Zou, X. L.; Liu, Y. Q.; Zhong, W. L.; Zhao, K. J.; Ji, X. Q.; Mao, W. C.; Wang, Q. M.; Li, Q.; Cao, J. Y.; Cao, Z.; Lei, G. J.; Zhang, J. H.; Li, X. D.; Bai, X. Y.; Cheng, J.; Chen, W.; Cui, Z. Y.; Delpech, L.; Diamond, P. H.; Dong, Y. B.; Ekedahl, A.; Hoang, T.; Huang, Y.; Ida, K.; Itoh, K.; Itoh, S.-I.; Isobe, M.; Inagaki, S.; Mazon, D.; Morita, S.; Peysson, Y.; Shi, Z. B.; Wang, X. G.; Xiao, G. L.; Yu, D. L.; Yu, L. M.; Zhang, Y. P.; Zhou, Y.; Cui, C. H.; Feng, B. B.; Huang, M.; Li, Y. G.; Li, B.; Li, G. S.; Li, H. J.; Li, Qing; Peng, J. F.; Wang, Y. Q.; Yuan, B. S.; Liu, Yong; HL-2A Team

2017-10-01

Since the last Fusion Energy Conference, significant progress has been made in the following areas. The first high coupling efficiency low-hybrid current drive (LHCD) with a passive-active multi-junction (PAM) antenna was successfully demonstrated in the H-mode on the HL-2A tokamak. Double critical impurity gradients of electromagnetic turbulence were observed in H-mode plasmas. Various ELM mitigation techniques have been investigated, including supersonic molecular beam injection (SMBI), impurity seeding, resonant magnetic perturbation (RMP) and low-hybrid wave (LHW). The ion internal transport barrier was observed in neutral beam injection (NBI) heated plasmas. Neoclassical tearing modes (NTMs) driven by the transient perturbation of local electron temperature during non-local thermal transport events have been observed, and a new type of non-local transport triggered by the ion fishbone was found. A long-lasting runaway electron plateau was achieved after argon injection and the runaway current was successfully suppressed by SMBI. It was found that low-n Alfvénic ion temperature gradient (AITG) modes can be destabilized in ohmic plasmas, even with weak magnetic shear and low-pressure gradients. For the first time, the synchronization of geodesic acoustic mode (GAM) and magnetic fluctuations was observed in edge plasmas, revealing frequency entrainment and phase lock. The spatiotemporal features of zonal flows were also studied using multi-channel correlation Doppler reflectometers.

Characterization of a complex near-surface structure using well logging and passive seismic measurements

NASA Astrophysics Data System (ADS)

Benjumea, Beatriz; Macau, Albert; Gabàs, Anna; Figueras, Sara

2016-04-01

We combine geophysical well logging and passive seismic measurements to characterize the near-surface geology of an area located in Hontomin, Burgos (Spain). This area has some near-surface challenges for a geophysical study. The irregular topography is characterized by limestone outcrops and unconsolidated sediments areas. Additionally, the near-surface geology includes an upper layer of pure limestones overlying marly limestones and marls (Upper Cretaceous). These materials lie on top of Low Cretaceous siliciclastic sediments (sandstones, clays, gravels). In any case, a layer with reduced velocity is expected. The geophysical data sets used in this study include sonic and gamma-ray logs at two boreholes and passive seismic measurements: three arrays and 224 seismic stations for applying the horizontal-to-vertical amplitude spectra ratio method (H/V). Well-logging data define two significant changes in the P-wave-velocity log within the Upper Cretaceous layer and one more at the Upper to Lower Cretaceous contact. This technique has also been used for refining the geological interpretation. The passive seismic measurements provide a map of sediment thickness with a maximum of around 40 m and shear-wave velocity profiles from the array technique. A comparison between seismic velocity coming from well logging and array measurements defines the resolution limits of the passive seismic techniques and helps it to be interpreted. This study shows how these low-cost techniques can provide useful information about near-surface complexity that could be used for designing a geophysical field survey or for seismic processing steps such as statics or imaging.

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaidi, Z. H., E-mail: zaffar.zaidi@sheffield.ac.uk; Lee, K. B.; Qian, H.

2014-12-28

In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}–10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid ismore » believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90 × 10{sup 12 }cm{sup −2} eV{sup −1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.« less

A XPS Study of the Passivity of Stainless Steels Influenced by Sulfate-Reducing Bacteria.

NASA Astrophysics Data System (ADS)

Chen, Guocun

The influence of sulfate-reducing bacteria (SRB) on the passivity of type 304 and 317L stainless steels (SS) was investigated by x-ray photoelectron spectroscopy (XPS), microbiological and electrochemical techniques. Samples were exposed to SRB, and then the resultant surfaces were analyzed by XPS, and the corrosion resistance by potentiodynamic polarization in deaerated 0.1 M HCl. To further understand their passivity, the SRB-exposed samples were analyzed by XPS after potentiostatic polarization at a passive potential in the hydrochloric solution. The characterization was performed under two surface conditions: unrinsed and rinsed by deaerated alcohol and deionized water. Comparisons were made with control samples immersed in uninoculated medium. SRB caused a severe loss of the passivity of 304 SS through sulfide formation and possible additional activation to form hexavalent chromium. The sulfides included FeS, FeS_2, Cr_2S _3, NiS and possibly Fe_ {rm 1-x}S. The interaction took place nonuniformly, resulting in undercutting of the passive film and preferential hydration of inner surface layers. The bacterial activation of the Cr^{6+ }^ecies was magnified by subsequent potentiostatic polarization. In contrast, 317L SS exhibited a limited passivity. The sulfides were formed mainly in the outer layers. Although Cr^{6+}^ecies were observed after the exposure, they were dissolved upon polarization. Since 317L SS has a higher Mo content, its higher passivity was ascribed to Mo existing as molybdate on the surface and Mo^{5+} species in the biofilm. Consequently, the interaction of SRB with Mo was studied. It was observed that molybdate could be retained on the surfaces of Mo coupons by corrosion products. In the presence of SRB, however, a considerable portion of the molybdate interacted with intermediate sulfur -containing proteins, forming Mo(V)-S complexes and reducing bacterial growth and sulfate reduction. The limited insolubility of the Mo(V)-S complexes in 0.1 M HCl provided a certain protection so that the pitting potential of the SRB-exposed Mo coupons was not considerably decreased. The interaction of the sulfur-containing proteins with Mo also provided mechanistic information about the adhesion of biofilm to Mo-bearing steels. Additionally, the interactions of SRB with other alloying elements, Cr and Ni, were investigated.

Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells.

PubMed

Liu, Zhaolang; Yang, Zhenhai; Wu, Sudong; Zhu, Juye; Guo, Wei; Sheng, Jiang; Ye, Jichun; Cui, Yi

2017-12-26

Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO 2 ) films, due to formation of an accumulation layer of negative carriers (O 2 - species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O 2 - received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.

Bridging the Global Precipitation and Soil Moisture Active Passive Missions: Variability of Microwave Surface Emissivity from In situ and Remote Sensing Perspectives

NASA Astrophysics Data System (ADS)

Zheng, Y.; Kirstetter, P.; Hong, Y.; Turk, J.

2016-12-01

The overland precipitation retrievals from satellite passive microwave (PMW) sensors such as the Global Precipitation Mission (GPM) microwave imager (GMI) are impacted by the land surface emissivity. The estimation of PMW emissivity faces challenges because it is highly variable under the influence of surface properties such as soil moisture, surface roughness and vegetation. This study proposes an improved quantitative understanding of the relationship between the emissivity and surface parameters. Surface parameter information is obtained through (i) in-situ measurements from the International Soil Moisture Network and (ii) satellite measurements from the Soil Moisture Active and Passive mission (SMAP) which provides global scale soil moisture estimates. The variation of emissivity is quantified with soil moisture, surface temperature and vegetation at various frequencies/polarization and over different types of land surfaces to sheds light into the processes governing the emission of the land. This analysis is used to estimate the emissivity under rainy conditions. The framework built with in-situ measurements serves as a benchmark for satellite-based analyses, which paves a way toward global scale emissivity estimates using SMAP.

Ankle Joint Angle and Lower Leg Musculotendinous Unit Responses to Cryotherapy.

PubMed

Akehi, Kazuma; Long, Blaine C; Warren, Aric J; Goad, Carla L

2016-09-01

Akehi, K, Long, BC, Warren, AJ, and Goad, CL. Ankle joint angle and lower leg musculotendinous unit responses to cryotherapy. J Strength Cond Res 30(9): 2482-2492, 2016-The use of cold application has been debated for its influence on joint range of motion (ROM) and stiffness. The purpose of this study was to determine whether a 30-minute ice bag application to the plantarflexor muscles or ankle influences passive ankle dorsiflexion ROM and lower leg musculotendinous stiffness (MTS). Thirty-five recreationally active college-aged individuals with no history of lower leg injury 6 months before data collection volunteered. On each testing day, we measured maximum passive ankle dorsiflexion ROM (°) and plantarflexor torque (N·m) on an isokinetic dynamometer to calculate the passive plantarflexor MTS (N·m per degree) at 4 joint angles before, during, and after a treatment. Surface electromyography amplitudes (μV), and skin surface and ambient air temperature (°C) were also measured. Subjects received an ice bag to the posterior lower leg, ankle joint, or nothing for 30 minutes in different days. Ice bag application to the lower leg and ankle did not influence passive ROM (F(12,396) = 0.67, p = 0.78). Passive torque increased after ice bag application to the lower leg (F(12,396) = 2.21, p = 0.011). Passive MTS at the initial joint angle increased after ice bag application to the lower leg (F(12,396) = 2.14, p = 0.014) but not at the other joint angles (p > 0.05). Surface electromyography amplitudes for gastrocnemius and soleus muscles increased after ice application to the lower leg (F(2,66) = 5.61, p = 0.006; F(12,396) = 3.60, p < 0.001). Ice bag application to the lower leg and ankle joint does not alter passive dorsiflexion ROM but increases passive ankle plantarflexor torque in addition to passive ankle plantarflexor MTS at the initial joint angle.

Sub-micron elastic property characterization of materials using a near-field scanning optical microscope

NASA Astrophysics Data System (ADS)

Blodgett, David W.; Spicer, James B.

2001-12-01

The ability to characterize the sub-surface mechanical properties of a bulk or thin film material at the sub-micron level has applications in the microelectronics and thin film industries. In the microelectronics industry, with the decrease of line widths and the increase of component densities, sub-surface voids have become increasingly detrimental. Any voids along an integrated circuit (IC) line can lead to improper electrical connections between components and can cause failure of the device. In the thin film industry, the detection of impurities is also important. Any impurities can detract from the film's desired optical, electrical, or mechanical properties. Just as important as the detection of voids and impurities, is the measurement of the elastic properties of a material on the nanometer scale. These elastic measurements provide insight into the microstructural properties of the material. We have been investigating a technique that couples the high-resolution surface imaging capabilities of the apertureless near-field scanning optical microscope (ANSOM) with the sub-surface characterization strengths of high-frequency ultrasound. As an ultrasonic wave propagates, the amplitude decreases due to geometrical spreading, attenuation from absorption, and scattering from discontinuities. Measurement of wave speeds and attenuation provides the information needed to quantify the bulk or surface properties of a material. The arrival of an ultrasonic wave at or along the surface of a material is accompanied with a small surface displacement. Conventional methods for the ultrasound detection rely on either a contact transducer or optical technique (interferometric, beam deflection, etc.). However, each of these methods is limited by the spatial resolution dictated by the detection footprint. As the footprint size increases, variations across the ultrasonic wavefront are effectively averaged, masking the presence of any nanometer-scale sub-surface or surface mechanical property variations. The use of an ANSOM for sensing ultrasonic wave arrivals reduces the detection footprint allowing any nanometer scale variations in the microstructure of a material to be detected. In an ANSOM, the ultrasonic displacement is manifested as perturbations on the near-field signal due to the small variations in the tip-sample caused by the wave arrival. Due to the linear dependence of the near-field signal on tip-sample separation, these perturbations can be interpreted using methods identical to those for conventional ultrasonic techniques. In this paper, we report results using both contact transducer (5 MHz) and laser-generated ultrasound.

Lifetime degradation of n-type Czochralski silicon after hydrogenation

NASA Astrophysics Data System (ADS)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

Space charge characteristics of fluorinated polyethylene: Different effects of fluorine and oxygen

NASA Astrophysics Data System (ADS)

Zhao, Ni; Nie, Yongjie; Li, Shengtao

2018-04-01

Direct fluorination are proved having obvious effect on space charge characteristics of polyethylene. It is believed that fluorine has a positive effect on suppressing space charge injection while oxygen impurity has a negative effect. However, the mechanism for the opposite effect of fluorine and oxygen is still not clear. In this paper, the different effects of fluorine and oxygen on space charge characteristics of fluorinated low density polyethylene (LDPE) are investigated on the basis of dielectric property, chemical constitutes and trap performance of surface fluorinated layers. The results show that direct fluorination has obvious effect on chemical constitutes and dielectric properties of surface fluorinated layer. Introduced fluorine is the main factor for suppressing charge injection from the electrodes, because it seriously changes the chemical constitutes and further the trap properties of the surface fluorinated layer. While introduction of oxygen results in heterocharges and makes space charge distribution complex, due to the ionization of generated small groups like C=O containing groups. Moreover, direct fluorination will result in cleavage of some LDPE molecules whatever there is oxygen impurity or not.

Simulation of Carbon Production from Material Surfaces in Fusion Devices

NASA Astrophysics Data System (ADS)

Marian, J.; Verboncoeur, J.

2005-10-01

Impurity production at carbon surfaces by plasma bombardment is a key issue for fusion devices as modest amounts can lead to excessive radiative power loss and/or hydrogenic D-T fuel dilution. Here results of molecular dynamics (MD) simulations of physical and chemical sputtering of hydrocarbons are presented for models of graphite and amorphous carbon, the latter formed by continuous D-T impingement in conditions that mimic fusion devices. The results represent more extensive simulations than we reported last year, including incident energies in the 30-300 eV range for a variety of incident angles that yield a number of different hydrocarbon molecules. The calculated low-energy yields clarify the uncertainty in the complex chemical sputtering rate since chemical bonding and hard-core repulsion are both included in the interatomic potential. Also modeled is hydrocarbon break-up by electron-impact collisions and transport near the surface. Finally, edge transport simulations illustrate the sensitivity of the edge plasma properties arising from moderate changes in the carbon content. The models will provide the impurity background for the TEMPEST kinetic edge code.

The role of surface passivation in controlling Ge nanowire faceting

DOE PAGES

Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; ...

2015-11-05

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less