Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

NASA Astrophysics Data System (ADS)

Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

2018-04-01

It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 < d < 20 nm in size are applied on InGaN/GaN multiple quantum well structures with surface morphology less nonuniform than that of ZnO films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter

2014-07-21

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Unconventional transformation of spin Dirac phase across a topological quantum phase transition

PubMed Central

Xu, Su-Yang; Neupane, Madhab; Belopolski, Ilya; Liu, Chang; Alidoust, Nasser; Bian, Guang; Jia, Shuang; Landolt, Gabriel; Slomski, Batosz; Dil, J. Hugo; Shibayev, Pavel P.; Basak, Susmita; Chang, Tay-Rong; Jeng, Horng-Tay; Cava, Robert J.; Lin, Hsin; Bansil, Arun; Hasan, M. Zahid

2015-01-01

The topology of a topological material can be encoded in its surface states. These surface states can only be removed by a bulk topological quantum phase transition into a trivial phase. Here we use photoemission spectroscopy to image the formation of protected surface states in a topological insulator as we chemically tune the system through a topological transition. Surprisingly, we discover an exotic spin-momentum locked, gapped surface state in the trivial phase that shares many important properties with the actual topological surface state in anticipation of the change of topology. Using a spin-resolved measurement, we show that apart from a surface bandgap these states develop spin textures similar to the topological surface states well before the transition. Our results offer a general paradigm for understanding how surface states in topological phases arise from a quantum phase transition and are suggestive for the future realization of Weyl arcs, condensed matter supersymmetry and other fascinating phenomena in the vicinity of a quantum criticality. PMID:25882717

Unconventional transformation of spin Dirac phase across a topological quantum phase transition

DOE PAGES

Xu, Su -Yang; Neupane, Madhab; Belopolski, Ilya; ...

2015-04-17

The topology of a topological material can be encoded in its surface states. These surface states can only be removed by a bulk topological quantum phase transition into a trivial phase. Here we use photoemission spectroscopy to image the formation of protected surface states in a topological insulator as we chemically tune the system through a topological transition. Surprisingly, we discover an exotic spin-momentum locked, gapped surface state in the trivial phase that shares many important properties with the actual topological surface state in anticipation of the change of topology. Using a spin-resolved measurement, we show that apart from amore » surface bandgap these states develop spin textures similar to the topological surface states well before the transition. Our results provide a general paradigm for understanding how surface states in topological phases arise from a quantum phase transition and are suggestive for the future realization of Weyl arcs, condensed matter supersymmetry and other fascinating phenomena in the vicinity of a quantum criticality.« less

The role of surface ligands in determining the electronic properties of quantum dot solids and their impact on photovoltaic figure of merits.

PubMed

Goswami, Prasenjit N; Mandal, Debranjan; Rath, Arup K

2018-01-18

Surface chemistry plays a crucial role in determining the electronic properties of quantum dot solids and may well be the key to mitigate loss processes involved in quantum dot solar cells. Surface ligands help to maintain the shape and size of the individual dots in solid films, to preserve the clean energy band gap of the individual particles and to control charge carrier conduction across solid films, in turn regulating their performance in photovoltaic applications. In this report, we show that the changes in size, shape and functional groups of small chain organic ligands enable us to modulate mobility, dielectric constant and carrier doping density of lead sulfide quantum dot solids. Furthermore, we correlate these results with performance, stability and recombination processes in the respective photovoltaic devices. Our results highlight the critical role of surface chemistry in the electronic properties of quantum dots. The role of the size, functionality and the surface coverage of the ligands in determining charge transport properties and the stability of quantum dot solids have been discussed. Our findings, when applied in designing new ligands with higher mobility and improved passivation of quantum dot solids, can have important implications for the development of high-performance quantum dot solar cells.

Zeeman effect of the topological surface states revealed by quantum oscillations up to 91 Tesla

DOE PAGES

Zhang, Zuocheng; Wei, Wei; Yang, Fangyuan; ...

2015-12-01

In this paper, we report quantum oscillation studies on the Bi 2Te 3-xS x topological insulator single crystals in pulsed magnetic fields up to 91 T. For the x = 0.4 sample with the lowest bulk carrier density, the surface and bulk quantum oscillations can be disentangled by combined Shubnikov–de Haas and de Hass–van Alphen oscillations, as well as quantum oscillations in nanometer-thick peeled crystals. At high magnetic fields beyond the bulk quantum limit, our results suggest that the zeroth Landau level of topological surface states is shifted due to the Zeeman effect. The g factor of the topological surfacemore » states is estimated to be between 1.8 and 4.5. Lastly, these observations shed new light on the quantum transport phenomena of topological insulators in ultrahigh magnetic fields.« less

Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

NASA Astrophysics Data System (ADS)

Li, Chen; Maidaniuk, Yurii; Kuchuk, Andrian V.; Shetty, Satish; Ghosh, Pijush; White, Thomas P.; Morgan, Timothy Al.; Hu, Xian; Wu, Yang; Ware, Morgan E.; Mazur, Yuriy I.; Salamo, Gregory J.

2018-05-01

We report the effects of nitrogen (N) plasma and indium (In) flux on the In adatom adsorption/desorption kinetics on a GaN(0001) surface at the relatively high plasma-assisted molecular beam epitaxy-growth temperature of 680 °C. We experimentally demonstrate that under an active N flux, the (√{3 }×√{3 })R 30 ° surface reconstruction containing In and N quickly appears and the dynamically stable In adlayers sitting on this surface exhibit a continuous change from 0 to 2 MLs as a function of In flux. Compared to the bare GaN 1 ×1 surface which is stable during In exposure without an active N flux, we observed a much faster desorption for the bottom In adlayer and the absence of an In flux window corresponding to an In coverage of 1 ML. Moreover, when the In coverage exceeds 2 MLs, the desorption rates become identical for both surfaces. Finally, the importance of In surface coverage before GaN capping was shown by growing a series of InN/GaN multiple quantum well samples. The photoluminescence data show that a consistent quantum well structure is only formed if the surface is covered by excess In droplets before GaN capping.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Nanoscale patterning of colloidal quantum dots on transparent and metallic planar surfaces.

PubMed

Park, Yeonsang; Roh, Young-Geun; Kim, Un Jeong; Chung, Dae-Young; Suh, Hwansoo; Kim, Jineun; Cheon, Sangmo; Lee, Jaesoong; Kim, Tae-Ho; Cho, Kyung-Sang; Lee, Chang-Won

2012-09-07

The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing and microcontact printing of quantum dots have been recently developed. Herein, we present a simple method of patterning colloidal quantum dots for photonic nanostructures such as straight lines, rings and dot patterns either on transparent or metallic substrates. Sub-10 nm width of the patterned line could be achieved with a well-defined sidewall profile. Using this method, we demonstrate a surface plasmon launcher from a quantum dot cluster in the visible spectrum.

Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

PubMed

Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

2013-12-27

The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

Unconventional Electron Pairing and Topological Superconductivity in Proximitized HgTe Quantum Wells

NASA Astrophysics Data System (ADS)

Ren, Hechen; Hart, Sean; Kosowsky, Michael; Ben-Shach, Gilad; Leubner, Philipp; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Halperin, Bertrand; Yacoby, Amir

Coupling s-wave superconductors to systems with exotic Fermi surface spin textures has been recently proposed as a way to manipulate the nature of the paired state, in some cases even leading to a topological phase transition. Recently, we studied the behavior of Fraunhofer interference in HgTe quantum well-based Josephson junctions, in the presence of a magnetic field applied in the plane of the quantum well. Here we theoretically analyze our system and compare the predicted behavior to our experimental results. We find that the in-plane magnetic field tunes the momentum of Cooper pairs in the quantum well, directly reflecting the response of the spin-dependent Fermi surfaces. This momentum tuning depends crucially on the type of spin-orbit coupling in the system. In the high electron density regime, the induced superconductivity evolves with electron density in agreement with our model based on the Hamiltonian of Bernevig, Hughes and Zhang. This agreement provides a quantitative value for g/vF, where g is the effective g-factor and vF is the Fermi velocity. Our new understanding of the interplay between spin physics and superconductivity introduces a way to spatially engineer the order parameter from singlet to triplet pairing, and in general allows investigation of electronic spin texture at the Fermi surface of materials. NSF DMR-1206016; STC Center for Integrated Quantum Materials under NSF Grant No. DMR-1231319; NSF GRFP under Grant DGE1144152, Microsoft Corporation Project Q.

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Coupling between graphene and intersubband collective excitations in quantum wells

NASA Astrophysics Data System (ADS)

Gonzalez de la Cruz, G.

2017-08-01

Recently, strong light-matter coupling between the electromagnetic modes in plasmonic metasurfaces with quantum-engineering electronic intersubband transitions in quantum wells has been demonstrated experimentally (Benz et al., [14], Lee et al., [15]). These novel materials combining different two-dimensional electronic systems offer new opportunities for tunable optical devices and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, our aim is to study the plasmon spectra of a hybrid structure consisting of conventional two-dimensional electron gas (2DEG) in a semiconductor quantum well and a graphene sheet with an interlayer separation of a. This electronic bilayer structure is immersed in a nonhomgeneous dielectric background of the system. We use a simple model in which the graphene surface plasmons and both; the intrasubband and intersubband collective electron excitations in the quantum well are coupled via screened Coulomb interaction. Here we calculate the dispersion of these relativistic/nonrelativistic new plasmon modes taking into account the thickness of the quantum well providing analytical expressions in the long-wavelength limit.

Quantum dots for GaAs-based surface emitting lasers at 1300 nm

NASA Astrophysics Data System (ADS)

Grundmann, M.; Ledentsov, N. N.; Hopfer, F.; Heinrichsdorff, F.; Guffarth, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Musikhin, Yu. G.; Alferov, Zh. I.; Lott, J. A.; Zhakharov, N. D.; Werner, P.

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

Water dissociating on rigid Ni(100): A quantum dynamics study on a full-dimensional potential energy surface

NASA Astrophysics Data System (ADS)

Liu, Tianhui; Chen, Jun; Zhang, Zhaojun; Shen, Xiangjian; Fu, Bina; Zhang, Dong H.

2018-04-01

We constructed a nine-dimensional (9D) potential energy surface (PES) for the dissociative chemisorption of H2O on a rigid Ni(100) surface using the neural network method based on roughly 110 000 energies obtained from extensive density functional theory (DFT) calculations. The resulting PES is accurate and smooth, based on the small fitting errors and the good agreement between the fitted PES and the direct DFT calculations. Time dependent wave packet calculations also showed that the PES is very well converged with respect to the fitting procedure. The dissociation probabilities of H2O initially in the ground rovibrational state from 9D quantum dynamics calculations are quite different from the site-specific results from the seven-dimensional (7D) calculations, indicating the importance of full-dimensional quantum dynamics to quantitatively characterize this gas-surface reaction. It is found that the validity of the site-averaging approximation with exact potential holds well, where the site-averaging dissociation probability over 15 fixed impact sites obtained from 7D quantum dynamics calculations can accurately approximate the 9D dissociation probability for H2O in the ground rovibrational state.

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

1994-01-01

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Larsson, Anders; Lee, Luke P.

1991-01-01

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Formation of Surface and Quantum-Well States in Ultra Thin Pt Films on the Au(111) Surface

PubMed Central

Silkin, Igor V.; Koroteev, Yury M.; Echenique, Pedro M.; Chulkov, Evgueni V.

2017-01-01

The electronic structure of the Pt/Au(111) heterostructures with a number of Pt monolayers n ranging from one to three is studied in the density-functional-theory framework. The calculations demonstrate that the deposition of the Pt atomic thin films on gold substrate results in strong modifications of the electronic structure at the surface. In particular, the Au(111) s-p-type Shockley surface state becomes completely unoccupied at deposition of any number of Pt monolayers. The Pt adlayer generates numerous quantum-well states in various energy gaps of Au(111) with strong spatial confinement at the surface. As a result, strong enhancement in the local density of state at the surface Pt atomic layer in comparison with clean Pt surface is obtained. The excess in the density of states has maximal magnitude in the case of one monolayer Pt adlayer and gradually reduces with increasing number of Pt atomic layers. The spin–orbit coupling produces strong modification of the energy dispersion of the electronic states generated by the Pt adlayer and gives rise to certain quantum states with a characteristic Dirac-cone shape. PMID:29232833

Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs

NASA Astrophysics Data System (ADS)

Li, Yufeng; Wang, Shuai; Su, Xilin; Tang, Weihan; Li, Qiang; Guo, Maofeng; Zhang, Ye; Zhang, Minyan; Yun, Feng; Hou, Xun

2017-11-01

Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed.

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

NASA Astrophysics Data System (ADS)

Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul

2018-07-01

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.

Dynamical importance of van der Waals saddle and excited potential surface in C(1D)+D2 complex-forming reaction

PubMed Central

Shen, Zhitao; Ma, Haitao; Zhang, Chunfang; Fu, Mingkai; Wu, Yanan; Bian, Wensheng; Cao, Jianwei

2017-01-01

Encouraged by recent advances in revealing significant effects of van der Waals wells on reaction dynamics, many people assume that van der Waals wells are inevitable in chemical reactions. Here we find that the weak long-range forces cause van der Waals saddles in the prototypical C(1D)+D2 complex-forming reaction that have very different dynamical effects from van der Waals wells at low collision energies. Accurate quantum dynamics calculations on our highly accurate ab initio potential energy surfaces with van der Waals saddles yield cross-sections in close agreement with crossed-beam experiments, whereas the same calculations on an earlier surface with van der Waals wells produce much smaller cross-sections at low energies. Further trajectory calculations reveal that the van der Waals saddle leads to a torsion then sideways insertion reaction mechanism, whereas the well suppresses reactivity. Quantum diffraction oscillations and sharp resonances are also predicted based on our ground- and excited-state potential energy surfaces. PMID:28094253

Electrical tuning of a quantum plasmonic resonance

DOE PAGES

Liu, Xiaoge; Kang, Ju -Hyung; Yuan, Hongtao; ...

2017-06-12

Surface plasmon (SP) excitations in metals facilitate confinement of light into deep-subwavelength volumes and can induce strong light–matter interaction. Generally, the SP resonances supported by noble metal nanostructures are explained well by classical models, at least until the nanostructure size is decreased to a few nanometres, approaching the Fermi wavelength λ F of the electrons. Although there is a long history of reports on quantum size effects in the plasmonic response of nanometre-sized metal particles systematic experimental studies have been hindered by inhomogeneous broadening in ensemble measurements, as well as imperfect control over size, shape, faceting, surface reconstructions, contamination, chargingmore » effects and surface roughness in single-particle measurements. In particular, observation of the quantum size effect in metallic films and its tuning with thickness has been challenging as they only confine carriers in one direction. Here, we show active tuning of quantum size effects in SP resonances supported by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as a low-carrier-density Drude metal. An ionic liquid (IL) is used to electrically gate and partially deplete the ITO layer. The experiment shows a controllable and reversible blue-shift in the SP resonance above a critical voltage. As a result, a quantum-mechanical model including the quantum size effect reproduces the experimental results, whereas a classical model only predicts a red shift.« less

Electrical tuning of a quantum plasmonic resonance

NASA Astrophysics Data System (ADS)

Liu, Xiaoge; Kang, Ju-Hyung; Yuan, Hongtao; Park, Junghyun; Kim, Soo Jin; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

2017-09-01

Surface plasmon (SP) excitations in metals facilitate confinement of light into deep-subwavelength volumes and can induce strong light-matter interaction. Generally, the SP resonances supported by noble metal nanostructures are explained well by classical models, at least until the nanostructure size is decreased to a few nanometres, approaching the Fermi wavelength λF of the electrons. Although there is a long history of reports on quantum size effects in the plasmonic response of nanometre-sized metal particles, systematic experimental studies have been hindered by inhomogeneous broadening in ensemble measurements, as well as imperfect control over size, shape, faceting, surface reconstructions, contamination, charging effects and surface roughness in single-particle measurements. In particular, observation of the quantum size effect in metallic films and its tuning with thickness has been challenging as they only confine carriers in one direction. Here, we show active tuning of quantum size effects in SP resonances supported by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as a low-carrier-density Drude metal. An ionic liquid (IL) is used to electrically gate and partially deplete the ITO layer. The experiment shows a controllable and reversible blue-shift in the SP resonance above a critical voltage. A quantum-mechanical model including the quantum size effect reproduces the experimental results, whereas a classical model only predicts a red shift.

Controlling Quantum-dot Light Absorption and Emission by a Surface-plasmon Field

DTIC Science & Technology

2014-11-03

as well as photon conversion by a surface-plasmon- polariton near field is explored for a quantum dot located above a metal surface. In contrast to the...2009). 7. D. Dini, R. Köhler, A. Tredicucci, G. Biasiol, and L. Sorba, “Microcavity polariton splitting of intersubband transitions,” Phys. Rev. Lett...S. De Liberato, C. Ciuti, P. Klang, G. Strasser, and C. Sirtori, “Ultrastrong light-matter coupling regime with polariton dots,” Phys. Rev. Lett. 105

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zuocheng; Wei, Wei; Yang, Fangyuan

In this paper, we report quantum oscillation studies on the Bi 2Te 3-xS x topological insulator single crystals in pulsed magnetic fields up to 91 T. For the x = 0.4 sample with the lowest bulk carrier density, the surface and bulk quantum oscillations can be disentangled by combined Shubnikov–de Haas and de Hass–van Alphen oscillations, as well as quantum oscillations in nanometer-thick peeled crystals. At high magnetic fields beyond the bulk quantum limit, our results suggest that the zeroth Landau level of topological surface states is shifted due to the Zeeman effect. The g factor of the topological surfacemore » states is estimated to be between 1.8 and 4.5. Lastly, these observations shed new light on the quantum transport phenomena of topological insulators in ultrahigh magnetic fields.« less

Handshake electron transfer from hydrogen Rydberg atoms incident at a series of metallic thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gibbard, J. A.; Softley, T. P.

2016-06-21

Thin metallic films have a 1D quantum well along the surface normal direction, which yields particle-in-a-box style electronic quantum states. However the quantum well is not infinitely deep and the wavefunctions of these states penetrate outside the surface where the electron is bound by its own image-charge attraction. Therefore a series of discrete, vacant states reach out from the thin film into the vacuum increasing the probability of electron transfer from an external atom or molecule to the thin film, especially for the resonant case where the quantum well energy matches that of the atom. We show that “handshake” electronmore » transfer from a highly excited Rydberg atom to these thin-film states is experimentally measurable. Thicker films have a wider 1D box, changing the energetic distribution and image-state contribution to the thin film wavefunctions, resulting in more resonances. Calculations successfully predict the number of resonances and the nature of the thin-film wavefunctions for a given film thickness.« less

Influence of surface states of CuInS2 quantum dots in quantum dots sensitized photo-electrodes

NASA Astrophysics Data System (ADS)

Peng, Zhuoyin; Liu, Yueli; Wu, Lei; Zhao, Yinghan; Chen, Keqiang; Chen, Wen

2016-12-01

Surface states are significant factor for the enhancement of electrochemical performance in CuInS2 quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S2- ligand capped CuInS2 quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S2- ligand enhances the UV-vis absorption and electron-hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S2- ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S2--capped CuInS2 quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

NASA Technical Reports Server (NTRS)

Henderson, R. H.; Sun, D.; Towe, E.

1995-01-01

The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Absalan, H; SalmanOgli, A; Rostami, R

The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event ormore » a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)« less

Quantitative analysis of the Ge concentration in a SiGe quantum well: comparison of low-energy RBS and SIMS measurements.

PubMed

Krecar, D; Rosner, M; Draxler, M; Bauer, P; Hutter, H

2006-01-01

The germanium concentration and the position and thickness of the quantum well in molecular beam epitaxy (MBE)-grown SiGe were quantitatively analyzed via low-energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). In these samples, the concentrations of Si and Ge were assumed to be constant, except for the quantum well, where the germanium concentration was lower. The thickness of the analyzed quantum well was about 12 nm and it was situated at a depth of about 60 nm below the surface. A dip showed up in the RBS spectra due to the lower germanium concentration in the quantum well, and this was evaluated. Good depth resolution was required in order to obtain quantitative results, and this was obtained by choosing a primary energy of 500 keV and a tilt angle of 51 degrees with respect to the surface normal. Quantitative information was deduced from the raw data by comparing it with SIMNRA simulated spectra. The SIMS measurements were performed with oxygen primary ions. Given the response function of the SIMS instrument (the SIMS depth profile of the germanium delta (delta) layer), and using the forward convolution (point-to-point convolution) model, it is possible to determine the germanium concentration and the thickness of the analyzed quantum well from the raw SIMS data. The aim of this work was to compare the results obtained via RBS and SIMS and to show their potential for use in the semiconductor and microelectronics industry. The detection of trace elements (here the doping element antimony) that could not be evaluated with RBS in low-energy mode is also demonstrated using SIMS instead.

Role of cationic size in the optical properties of the LiCl crystal surface: theoretical study.

PubMed

Abdel Halim, Wael Salah; Abdullah, Noha; Abdel-Aal, Safaa; Shalabi, A S

2012-06-01

The size of the cations (either Ca(2+), Sr(2+), Ga(+), or Au(+)) at the F(A1)-type color centers on the (100) surface of LiCl crystal plays an important role in the optical properties of this surface. In this work, double-well potentials at this surface were investigated using ab initio quantum mechanical methods. Quantum clusters were embedded in simulated Coulomb fields that closely approximate the Madelung fields of the host surface, and the ions that were the nearest neighbors to the F(A1) site were allowed to relax to equilibrium. The calculated Stokes-shifted optical transition bands, optical-optical conversion efficiency, and relaxed excited states of the defect-containing surface, as well as the orientational destruction of the color centers, recording sensitivity, exciton (energy) transfer, and the Glasner-Tompkins empirical relation were all found to be sensitive to the size of the dopant cation.

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

NASA Astrophysics Data System (ADS)

Mori, Takuma; Egawa, Takashi; Miyoshi, Makoto

2017-08-01

We conducted the study on the growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well (MQW) structures by metalorganic chemical vapor deposition (MOCVD). It was found that the sum of InGaN well thickness t well_total was a predominant factor to form the rough surface, in addition to the growth temperature as low as 800 °C for the p-GaN layers. Microstructure analyses revealed that the rough surfaces consisted of a certain number of hexagonal V-shaped pits starting from dislocations propagated through an under layer and they increased with the increased t well_total. It was confirmed that the light absorption was enlarged for MQW structure samples with rough-surface p-GaN layers on the top, owing to not only the thickness effect in MQWs but also their reduced light reflection on the surfaces. It was also confirmed that these optical properties contributed to the performance improvement in InGaN/GaN MQW solar cells.

Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property

NASA Astrophysics Data System (ADS)

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

2018-02-01

InGaAs/GaAsP strain-compensated multiple quantum wells were prepared by metal organic chemical vapor deposition on GaAs (100) substrates with misorientation of 15° toward [111]. In order to obtain better strain-compensated abrupt heterojunction interfaces, the compressive strain and relaxation of different quantum well and the total accumulated strain were investigated by adjusting In composition and the thickness of InxGa1-xAs well and GaAs1-yPy barrier keep constant. High resolution X-ray diffraction results indicate the crystal and interfacial structures of In0.18Ga0.82As (7 nm)/GaAs1-yPy with the least relaxation and total strain mismatch are better than others. From in-situ surface reflectivity curves, we observed the slope of reflectivity curve of multiple quantum wells increases with increasing lattice relaxation. Atomic force microscopic results show surface morphologies of three samples are Volmer-Weber mode. Indium segregation at heterointerface between well and barrier were investigated by secondary ion mass spectrometry which indicate indium diffusion width increase with the increasing total strain mismatch. Finally, a shoulder peak was observed from Gaussian fitting of photoluminescence, stemming from the lattice relaxation. These results demonstrate that the relaxation process is introduced and indium segregation length widens as the relaxation increases. The experimental results will be favorable for optimizing the epitaxial growth of InGaAs/GaAsP strain-compensated quantum wells in order to obtain high quality smooth heterointerface.

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

NASA Astrophysics Data System (ADS)

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

2016-03-01

InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.

2.8 {mu}m emission from type-I quantum wells grown on InAs{sub x}P{sub 1-x}/InP metamorphic graded buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Daehwan; Song, Yuncheng; Larry Lee, Minjoo

We report 2.8 {mu}m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAs{sub x}P{sub 1-x} step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 Multiplication-Sign 10{sup 6} cm{sup -2}. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 {mu}m with a narrow linewidth ({approx}50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.

Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

NASA Astrophysics Data System (ADS)

Bürger, M.; Kemper, R. M.; Bader, C. A.; Ruth, M.; Declair, S.; Meier, C.; Förstner, J.; As, D. J.

2013-09-01

Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

NASA Astrophysics Data System (ADS)

Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

2017-11-01

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

Surface plasmon oscillations in a semi-bounded semiconductor plasma

NASA Astrophysics Data System (ADS)

M, SHAHMANSOURI; A, P. MISRA

2018-02-01

We study the dispersion properties of surface plasmon (SP) oscillations in a semi-bounded semiconductor plasma with the effects of the Coulomb exchange (CE) force associated with the spin polarization of electrons and holes as well as the effects of the Fermi degenerate pressure and the quantum Bohm potential. Starting from a quantum hydrodynamic model coupled to the Poisson equation, we derive the general dispersion relation for surface plasma waves. Previous results in this context are recovered. The dispersion properties of the surface waves are analyzed in some particular cases of interest and the relative influence of the quantum forces on these waves are also studied for a nano-sized GaAs semiconductor plasma. It is found that the CE effects significantly modify the behaviors of the SP waves. The present results are applicable to understand the propagation characteristics of surface waves in solid density plasmas.

Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

NASA Astrophysics Data System (ADS)

Palmstrom, Axel F.; Santra, Pralay K.; Bent, Stacey F.

2015-07-01

Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

Quantum oscillations in nodal line systems

NASA Astrophysics Data System (ADS)

Yang, Hui; Moessner, Roderich; Lim, Lih-King

2018-04-01

We study signatures of magnetic quantum oscillations in three-dimensional nodal line semimetals at zero temperature. The extended nature of the degenerate bands can result in a Fermi surface geometry with topological genus one, as well as a Fermi surface of electron and hole pockets encapsulating the nodal line. Moreover, the underlying two-band model to describe a nodal line is not unique, in that there are two classes of Hamiltonian with distinct band topology giving rise to the same Fermi-surface geometry. After identifying the extremal cyclotron orbits in various magnetic field directions, we study their concomitant Landau levels and resulting quantum oscillation signatures. By Landau-fan-diagram analyses, we extract the nontrivial π Berry phase signature for extremal orbits linking the nodal line.

Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

NASA Astrophysics Data System (ADS)

Gastaldo, Daniele; Conta, Gianluca; Coïsson, Marco; Amato, Giampiero; Tiberto, Paola; Allia, Paolo

2018-05-01

A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled - zero field cooled measurements.

Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

DTIC Science & Technology

2000-06-23

when Nitrogen concentration is increased [91. In molecular beam epitaxy (MBE) one of the reasons of this is the surface quality degradation due to the...cavity surface emitting laser ( VCSEL ) emitting at 1.18 /tm was also reported [7 1. The main problem in the InGaAsN epitaxy is a large difference in the...vertical cavity surface emitting lasers ( VCSELs ). This stimulates attempts to fabricate high quality 1.3 /tm lasers on GaAs substrates. The best results

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

PubMed

Izhnin, Ihor I; Nesmelov, Sergey N; Dzyadukh, Stanislav M; Voitsekhovskii, Alexander V; Gorn, Dmitry I; Dvoretsky, Sergey A; Mikhailov, Nikolaj N

2016-12-01

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.

DOE Office of Scientific and Technical Information (OSTI.GOV)

McNeill, Jason Douglas

Electronic states of a thin layer of material on a surface possess unique physical and chemical properties. Some of these properties arise from the reduced dimensionality of the thin layer with respect to the bulk or the properties of the electric field where two materials of differing dielectric constants meet at an interface. Other properties are related to the nature of the surface chemical bond. Here, the properties of excess electrons in thin layers of Xenon, Krypton, and alkali metals are investigated, and the bound state energies and effective masses of the excess electrons are determined using two-photon photoemission. Formore » Xenon, the dependence of bound state energy, effective mass, and lifetime on layer thickness from one to nine layers is examined. Not all quantities were measured at each coverage. The two photon photoemission spectra of thin layers of Xenon on a Ag(111) substrate exhibit a number of sharp, well-defined peaks. The binding energy of the excess electronic states of Xenon layers exhibited a pronounced dependence on coverage. A discrete energy shift was observed for each additional atomic layer. At low coverage, a series of states resembling a Rydberg series is observed. This series is similar to the image state series observed on clean metal surfaces. Deviations from image state energies can be described in terms of the dielectric constant of the overlayer material and its effect on the image potential. For thicker layers of Xe (beyond the first few atomic layers), the coverage dependence of the features begins to resemble that of quantum well states. Quantum well states are related to bulk band states. However, the finite thickness of the layer restricts the perpendicular wavevector to a discrete set of values. Therefore, the spectrum of quantum well states contains a series of peaks which correspond to the various allowed values of the perpendicular wavevector. Analysis of the quantum well spectrum yields electronic band structure information. In this case, the quantum well states examined are derived from the Xenon conduction band. Measurements of the energies as a function of coverage yield the dispersion along the axis perpendicular to the surface while angle-resolved two-photon photoemission measurements yield information about dispersion along the surface parallel. The relative importance of the image potential and the overlayer band structure also depends on the quantum number and energy of the state. Some members of the image series may have an energy which is in an energy gap of the layer material, therefore such states may tend to remain physically outside the layer and retain much of their image character even at higher coverages. This is the case for the n = 1 image state of the Xe/Ag(111) system. The energies of image states which are excluded from the layer have a complex dependence on the thickness of the layer and its dielectric constant. The population decay kinetics of excited electronic states of the layer were also determined. Lifetimes are reported for the first three excited states for 1-6 atomic layers of Xe on Ag(111). As the image states evolve into quantum well states with increasing coverage, the lifetimes undergo an oscillation which marks a change in the spatial extent of the state. For example, the n = 2 quantum well state decreases substantially at 3-5 layers as the electron probability density in the layer increases. The lifetime data are modeled by extending the two-band nearly-free-electron approximation to account for the insulating Xe layer.« less

The photosensitivity of carbon quantum dots/CuAlO2 films composites.

PubMed

Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

2015-07-31

Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior.

The photosensitivity of carbon quantum dots/CuAlO2 films composites

NASA Astrophysics Data System (ADS)

Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

2015-07-01

Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior.

On-chip quantum tomography of mechanical nanoscale oscillators with guided Rydberg atoms

NASA Astrophysics Data System (ADS)

Sanz-Mora, A.; Wüster, S.; Rost, J.-M.

2017-07-01

Nanomechanical oscillators as well as Rydberg-atomic waveguides hosted on microfabricated chip surfaces hold promise to become pillars of future quantum technologies. In a hybrid platform with both, we show that beams of Rydberg atoms in waveguides can quantum coherently interrogate and manipulate nanomechanical elements, allowing full quantum state tomography. Central to the tomography are quantum nondemolition measurements using the Rydberg atoms as probes. Quantum coherent displacement of the oscillator is also made possible by driving the atoms with external fields while they interact with the oscillator. We numerically demonstrate the feasibility of this fully integrated on-chip control and read-out suite for quantum nanomechanics, taking into account noise and error sources.

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

NASA Astrophysics Data System (ADS)

Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.

2018-03-01

AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm-2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods.

PubMed

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Heilmann, Martin; Yang, Jianfeng; Dai, Xi; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2016-11-23

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.

2014-06-09

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasingmore » is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.« less

Asymmetric band gaps in a Rashba film system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carbone, C.; Moras, P.; Sheverdyaeva, P. M.

The joint effect of exchange and Rashba spin-orbit interactions is examined on the surface and quantum well states of Ag 2 Bi -terminated Ag films grown on ferromagnetic Fe(110). The system displays a particular combination of time-reversal and translational symmetry breaking that strongly influences its electronic structure. Angle-resolved photoemission reveals asymmetric band-gap openings, due to spin-selective hybridization between Rashba-split surface states and exchange-split quantum well states. This results in an unequal number of states along positive and negative reciprocal space directions. We suggest that the peculiar asymmetry of the discovered electronic structure can have significant influence on spin-polarized transport properties.

Atomic-scale investigation of nuclear quantum effects of surface water: Experiments and theory

NASA Astrophysics Data System (ADS)

Guo, Jing; Li, Xin-Zheng; Peng, Jinbo; Wang, En-Ge; Jiang, Ying

2017-12-01

Quantum behaviors of protons in terms of tunneling and zero-point motion have significant effects on the macroscopic properties, structure, and dynamics of water even at room temperature or higher. In spite of tremendous theoretical and experimental efforts, accurate and quantitative description of the nuclear quantum effects (NQEs) is still challenging. The main difficulty lies in that the NQEs are extremely susceptible to the structural inhomogeneity and local environments, especially when interfacial systems are concerned. In this review article, we will highlight the recent advances of scanning tunneling microscopy and spectroscopy (STM/S), which allows the access to the quantum degree of freedom of protons both in real and energy space. In addition, we will also introduce recent development of ab initio path-integral molecular dynamics (PIMD) simulations at surfaces/interfaces, in which both the electrons and nuclei are treated as quantum particles in contrast to traditional ab initio molecular dynamics (MD). Then we will discuss how the combination of STM/S and PIMD are used to directly visualize the concerted quantum tunneling of protons within the water clusters and quantify the impact of zero-point motion on the strength of a single hydrogen bond (H bond) at a water/solid interface. Those results may open up the new possibility of exploring the exotic quantum states of light nuclei at surfaces, as well as the quantum coupling between the electrons and nuclei.

MCTDH on-the-fly: Efficient grid-based quantum dynamics without pre-computed potential energy surfaces

NASA Astrophysics Data System (ADS)

Richings, Gareth W.; Habershon, Scott

2018-04-01

We present significant algorithmic improvements to a recently proposed direct quantum dynamics method, based upon combining well established grid-based quantum dynamics approaches and expansions of the potential energy operator in terms of a weighted sum of Gaussian functions. Specifically, using a sum of low-dimensional Gaussian functions to represent the potential energy surface (PES), combined with a secondary fitting of the PES using singular value decomposition, we show how standard grid-based quantum dynamics methods can be dramatically accelerated without loss of accuracy. This is demonstrated by on-the-fly simulations (using both standard grid-based methods and multi-configuration time-dependent Hartree) of both proton transfer on the electronic ground state of salicylaldimine and the non-adiabatic dynamics of pyrazine.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

NASA Astrophysics Data System (ADS)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

PubMed

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-02

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Chen, Y. C.; Shih, H. Y.; Chen, J. Y.; Tan, W. J.; Chen, Y. F.

2013-07-01

An optically detectable gas sensor based on the high surface sensitivity of functionalized polyethylenimine/starch In0.15Ga0.85N/GaN strained semiconductor multiple quantum wells (MQWs) has been developed. Due to the excellent piezoelectricity of the MQWs, the change of surface charges caused by chemical interaction can introduce a strain and induce an internal field. In turn, it tilts the energy levels of the MQWs and modifies the optical properties. Through the measurement of the changes in photoluminescence as well as Raman scattering spectra under different concentrations of carbon dioxide gas, we demonstrate the feasibility and high sensitivity of the sensors derived from our methodology.

Quantum size effects on the (0001) surface of double hexagonal close packed americium

NASA Astrophysics Data System (ADS)

Gao, D.; Ray, A. K.

2007-01-01

Electronic structures of double hexagonal close-packed americium and the (0001) surface have been studied via full-potential all-electron density-functional calculations with a mixed APW+lo/LAPW basis. The electronic and geometric properties of bulk dhcp Am as well as quantum size effects in the surface energies and the work functions of the dhcp Am (0001) ultra thin films up to seven layers have been examined at nonmagnetic, ferromagnetic, and antiferromagnetic configurations with and without spin orbit coupling. The anti-ferromagnetic state including spin-orbit coupling is found to be the ground state of dhcp Am with the 5f electrons primarily localized. Our results show that both magnetic configurations and spin-orbit coupling play important roles in determining the equilibrium lattice constant, the bulk modulus as well as the localized feature of 5f electrons for dhcp Am. Our calculated equilibrium lattice constant and bulk modulus at the ground state are in good agreement with the experimental values respectively. The work function of dhcp Am (0001) 7-layer surface at the ground state is predicted to be 2.90 eV. The surface energy for dhcp Am (0001) semi-infinite surface energy at the ground state is predicted to be 0.84 J/m2. Quantum size effects are found to be more pronounced in work functions than in surface energies.

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier.

PubMed

Zhou, Xiaorun; Lu, Taiping; Zhu, Yadan; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Yang, Yongzhen; Chen, Yongkang; Xu, Bingshe

2017-12-01

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H 2 ) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H 2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H 2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H 2 proportion further increases, stress relaxation and H 2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

A gold hybrid structure as optical coupler for quantum well infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Jiayi; Li, Qian; Jing, Youliang

2014-08-28

A hybrid structure consisting of a square lattice of gold disk arrays and an overlaying gold film is proposed as an optical coupler for a backside-illuminated quantum well infrared photodetector (QWIP). Finite difference time-domain method is used to numerically simulate the reflection spectra and the field distributions of the hybrid structure combined with the QWIP device. The results show that the electric field component perpendicular to the quantum well is strongly enhanced when the plasmonic resonant wavelength of the hybrid structure coincides with the response one of the quantum well infrared photodetector regardless of the polarization of the incident light.more » The effect of the diameter and thickness of an individual gold disk on the resonant wavelength is also investigated, which indicates that the localized surface plasmon also plays a role in the light coupling with the hybrid structure. The coupling efficiency can exceed 50 if the structural parameters of the gold disk arrays are well optimized.« less

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zech, E. S.; Chang, A. S.; Martin, A. J.

2013-08-19

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Quantum optics with single nanodiamonds flying over gold films: Towards a Robust quantum plasmonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mollet, O.; Drezet, A.; Huant, S.

2013-12-04

A nanodiamond (ND) hosting nitrogen-vacancy (NV) color centers is attached on the apex of an optical tip for near-field microscopy. Its fluorescence is used to launch surface plasmon-polaritons (SPPs) in a thin polycrystalline gold film. It is shown that the quantum nature of the initial source of light is preserved after conversion to SPPs. This opens the way to a deterministic quantum plasmonics, where single SPPs can be injected at well-defined positions in a plasmonic device produced by top-down approaches.

Quantum error correction in crossbar architectures

NASA Astrophysics Data System (ADS)

Helsen, Jonas; Steudtner, Mark; Veldhorst, Menno; Wehner, Stephanie

2018-07-01

A central challenge for the scaling of quantum computing systems is the need to control all qubits in the system without a large overhead. A solution for this problem in classical computing comes in the form of so-called crossbar architectures. Recently we made a proposal for a large-scale quantum processor (Li et al arXiv:1711.03807 (2017)) to be implemented in silicon quantum dots. This system features a crossbar control architecture which limits parallel single-qubit control, but allows the scheme to overcome control scaling issues that form a major hurdle to large-scale quantum computing systems. In this work, we develop a language that makes it possible to easily map quantum circuits to crossbar systems, taking into account their architecture and control limitations. Using this language we show how to map well known quantum error correction codes such as the planar surface and color codes in this limited control setting with only a small overhead in time. We analyze the logical error behavior of this surface code mapping for estimated experimental parameters of the crossbar system and conclude that logical error suppression to a level useful for real quantum computation is feasible.

Atomically manufactured nickel-silicon quantum dots displaying robust resonant tunneling and negative differential resistance

NASA Astrophysics Data System (ADS)

Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.

2017-12-01

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.

Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance

DOE PAGES

Cheng, Jian -Yih; Fisher, Brandon L.; Guisinger, Nathan P.; ...

2017-05-22

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni–Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni–Si clusters. The resonance energy is reproducible and the peak spacingmore » of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I–V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. Furthermore, all of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.« less

Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Jian -Yih; Fisher, Brandon L.; Guisinger, Nathan P.

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni–Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni–Si clusters. The resonance energy is reproducible and the peak spacingmore » of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I–V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. Furthermore, all of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.« less

Toward prethreshold gate-based quantum simulation of chemical dynamics: using potential energy surfaces to simulate few-channel molecular collisions

DOE PAGES

Sornborger, Andrew Tyler; Stancil, Phillip; Geller, Michael R.

2018-03-22

Here, one of the most promising applications of an error-corrected universal quantum computer is the efficient simulation of complex quantum systems such as large molecular systems. In this application, one is interested in both the electronic structure such as the ground state energy and dynamical properties such as the scattering cross section and chemical reaction rates. However, most theoretical work and experimental demonstrations have focused on the quantum computation of energies and energy surfaces. In this work, we attempt to make the prethreshold (not error-corrected) quantum simulation of dynamical properties practical as well. We show that the use of precomputedmore » potential energy surfaces and couplings enables the gate-based simulation of few-channel but otherwise realistic molecular collisions. Our approach is based on the widely used Born–Oppenheimer approximation for the structure problem coupled with a semiclassical method for the dynamics. In the latter the electrons are treated quantum mechanically but the nuclei are classical, which restricts the collisions to high energy or temperature (typically above ≈10 eV). By using operator splitting techniques optimized for the resulting time-dependent Hamiltonian simulation problem, we give several physically realistic collision examples, with 3–8 channels and circuit depths < 1000.« less

Toward prethreshold gate-based quantum simulation of chemical dynamics: using potential energy surfaces to simulate few-channel molecular collisions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sornborger, Andrew Tyler; Stancil, Phillip; Geller, Michael R.

Here, one of the most promising applications of an error-corrected universal quantum computer is the efficient simulation of complex quantum systems such as large molecular systems. In this application, one is interested in both the electronic structure such as the ground state energy and dynamical properties such as the scattering cross section and chemical reaction rates. However, most theoretical work and experimental demonstrations have focused on the quantum computation of energies and energy surfaces. In this work, we attempt to make the prethreshold (not error-corrected) quantum simulation of dynamical properties practical as well. We show that the use of precomputedmore » potential energy surfaces and couplings enables the gate-based simulation of few-channel but otherwise realistic molecular collisions. Our approach is based on the widely used Born–Oppenheimer approximation for the structure problem coupled with a semiclassical method for the dynamics. In the latter the electrons are treated quantum mechanically but the nuclei are classical, which restricts the collisions to high energy or temperature (typically above ≈10 eV). By using operator splitting techniques optimized for the resulting time-dependent Hamiltonian simulation problem, we give several physically realistic collision examples, with 3–8 channels and circuit depths < 1000.« less

Toward prethreshold gate-based quantum simulation of chemical dynamics: using potential energy surfaces to simulate few-channel molecular collisions

NASA Astrophysics Data System (ADS)

Sornborger, Andrew T.; Stancil, Phillip; Geller, Michael R.

2018-05-01

One of the most promising applications of an error-corrected universal quantum computer is the efficient simulation of complex quantum systems such as large molecular systems. In this application, one is interested in both the electronic structure such as the ground state energy and dynamical properties such as the scattering cross section and chemical reaction rates. However, most theoretical work and experimental demonstrations have focused on the quantum computation of energies and energy surfaces. In this work, we attempt to make the prethreshold (not error-corrected) quantum simulation of dynamical properties practical as well. We show that the use of precomputed potential energy surfaces and couplings enables the gate-based simulation of few-channel but otherwise realistic molecular collisions. Our approach is based on the widely used Born-Oppenheimer approximation for the structure problem coupled with a semiclassical method for the dynamics. In the latter the electrons are treated quantum mechanically but the nuclei are classical, which restricts the collisions to high energy or temperature (typically above ≈ 10 eV). By using operator splitting techniques optimized for the resulting time-dependent Hamiltonian simulation problem, we give several physically realistic collision examples, with 3-8 channels and circuit depths < 1000.

Infrared emitting device and method

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

1997-01-01

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Atoms and molecules in cavities, from weak to strong coupling in quantum-electrodynamics (QED) chemistry

PubMed Central

Flick, Johannes; Ruggenthaler, Michael; Appel, Heiko

2017-01-01

In this work, we provide an overview of how well-established concepts in the fields of quantum chemistry and material sciences have to be adapted when the quantum nature of light becomes important in correlated matter–photon problems. We analyze model systems in optical cavities, where the matter–photon interaction is considered from the weak- to the strong-coupling limit and for individual photon modes as well as for the multimode case. We identify fundamental changes in Born–Oppenheimer surfaces, spectroscopic quantities, conical intersections, and efficiency for quantum control. We conclude by applying our recently developed quantum-electrodynamical density-functional theory to spontaneous emission and show how a straightforward approximation accurately describes the correlated electron–photon dynamics. This work paves the way to describe matter–photon interactions from first principles and addresses the emergence of new states of matter in chemistry and material science. PMID:28275094

Controlled finite momentum pairing and spatially varying order parameter in proximitized HgTe quantum wells

NASA Astrophysics Data System (ADS)

Hart, Sean; Ren, Hechen; Kosowsky, Michael; Ben-Shach, Gilad; Leubner, Philipp; Bruene, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Halperin, Bertrand; Yacoby, Amir

Conventional s-wave superconductivity arises from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs with zero net momentum. Recent studies have focused on coupling s-wave superconductors to systems with an unusual configuration of electronic spin and momentum at the Fermi surface, where the nature of the paired state can be modified and the system may even undergo a topological phase transition. Here we present measurements on Josephson junctions based on HgTe quantum wells coupled to aluminum or niobium superconductors, and subject to a magnetic field in the plane of the quantum well. We observe that the in-plane magnetic field modulates the Fraunhofer interference pattern, and that this modulation depends both on electron density and on the direction of the in-plane field with respect to the junction. However, the orientation of the junction with respect to the underlying crystal lattice does not impact the measurements. These findings suggest that spin-orbit coupling plays a role in the observed behavior, and that measurements of Josephson junctions in the presence of an in-plane field can elucidate the Fermi surface properties of the weak link material. NSF DMR-1206016; STC Center for Integrated Quantum Materials under NSF Grant No. DMR-1231319; NSF GRFP under Grant DGE1144152, Microsoft Corporation Project Q.

Quantum Evaporation from Liquid 4He by Rotons

NASA Astrophysics Data System (ADS)

Hope, F. R.; Baird, M. J.; Wyatt, A. F. G.

1984-04-01

We have shown that rotons as well as phonons can evaporate 4He atoms in a single-quantum process. Measurements of the time of flight and the angular distribution of the evaporated atoms clearly distinguish between evaporation by phonons and rotons. The results indicate that energy and the parallel component of momentum are conserved at the free liquid surface.

Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN.

PubMed

Cho, Chu-Young; Kwon, Min-Ki; Lee, Sang-Jun; Han, Sang-Heon; Kang, Jang-Won; Kang, Se-Eun; Lee, Dong-Yul; Park, Seong-Ju

2010-05-21

We demonstrate the surface plasmon-enhanced blue light-emitting diodes (LEDs) using Ag nanoparticles embedded in p-GaN. A large increase in optical output power of 38% is achieved at an injection current of 20 mA due to an improved internal quantum efficiency of the LEDs. The enhancement of optical output power is dependent on the density of the Ag nanoparticles. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and localized surface plasmons in Ag nanoparticles embedded in p-GaN.

Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer

NASA Astrophysics Data System (ADS)

He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

2018-05-01

In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer.

PubMed

He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

2018-05-11

In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO 2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO 2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO 2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

On the origin of stretched exponential (Kohlrausch) relaxation kinetics in the room temperature luminescence decay of colloidal quantum dots.

PubMed

Bodunov, E N; Antonov, Yu A; Simões Gamboa, A L

2017-03-21

The non-exponential room temperature luminescence decay of colloidal quantum dots is often well described by a stretched exponential function. However, the physical meaning of the parameters of the function is not clear in the majority of cases reported in the literature. In this work, the room temperature stretched exponential luminescence decay of colloidal quantum dots is investigated theoretically in an attempt to identify the underlying physical mechanisms associated with the parameters of the function. Three classes of non-radiative transition processes between the excited and ground states of colloidal quantum dots are discussed: long-range resonance energy transfer, multiphonon relaxation, and contact quenching without diffusion. It is shown that multiphonon relaxation cannot explain a stretched exponential functional form of the luminescence decay while such dynamics of relaxation can be understood in terms of long-range resonance energy transfer to acceptors (molecules, quantum dots, or anharmonic molecular vibrations) in the environment of the quantum dots acting as energy-donors or by contact quenching by acceptors (surface traps or molecules) distributed statistically on the surface of the quantum dots. These non-radiative transition processes are assigned to different ranges of the stretching parameter β.

Quantum-well states in thin Ag films grown on the Ga/Si(111)-√{3 }×√{3 } surface

NASA Astrophysics Data System (ADS)

Starfelt, S.; Zhang, H. M.; Johansson, L. S. O.

2018-05-01

Silver thin films have been created by room temperature deposition on a Ga/Si(111)-√{3 }×√{3 } surface and their valence band structures and core levels have been measured by angle-resolved photoelectron spectroscopy (ARPES). Discrete quantum-well states (QWSs) quantized from the Ag s p valence band are observed already at 3 monolayers (ML). The characteristics of the QWSs have been examined in the phase accumulation model for thicknesses between 3 and 12 ML. The phase shift and QWSs binding energies dependence with Ag film thicknesses have all been consistently derived. In-plane energy dispersion follows a parabolic curve, and the effective mass of the QWSs shows an increasing trend with binding energies as well as with reduced film thicknesses. Furthermore, the ARPES measurements reveal umklapp mediated QWSs around the M ¯ points of the Si(111) 1 ×1 surface Brillouin zone. The study confirms that the Ga/Si(111)-√{3 }×√{3 } surface is a good substrate for growing uniform ultrathin Ag films in room temperature conditions.

Generalized effective-mass theory of subsurface scanning tunneling microscopy: Application to cleaved quantum dots

NASA Astrophysics Data System (ADS)

Roy, M.; Maksym, P. A.; Bruls, D.; Offermans, P.; Koenraad, P. M.

2010-11-01

An effective-mass theory of subsurface scanning tunneling microscopy (STM) is developed. Subsurface structures such as quantum dots embedded into a semiconductor slab are considered. States localized around subsurface structures match on to a tail that decays into the vacuum above the surface. It is shown that the lateral variation in this tail may be found from a surface envelope function provided that the effects of the slab surfaces and the subsurface structure decouple approximately. The surface envelope function is given by a weighted integral of a bulk envelope function that satisfies boundary conditions appropriate to the slab. The weight function decays into the slab inversely with distance and this slow decay explains the subsurface sensitivity of STM. These results enable STM images to be computed simply and economically from the bulk envelope function. The method is used to compute wave-function images of cleaved quantum dots and the computed images agree very well with experiment.

Optoelectronic Materials Center

DTIC Science & Technology

1991-06-11

surface - emitting GaAs/AIGaAs vertical - cavity laser (TJ- VCSEL ) incorporating wavelength-resonant...multi-quantum well, vertical cavity surface - emitted laser . This structure consists entirely of undoped epilayers, thus simplifying the problems of... cavity surface - emitting lasers ( VCSELs ) for doubling and for parallel optical data processing. Progress - GaAIAs/GaAs and InGaAs/GaAs RPG- VCSEL

Vibrational Properties of Hydrogen-Bonded Systems Using the Multireference Generalization to the "On-the-Fly" Electronic Structure within Quantum Wavepacket ab Initio Molecular Dynamics (QWAIMD).

PubMed

Li, Junjie; Li, Xiaohu; Iyengar, Srinivasan S

2014-06-10

We discuss a multiconfigurational treatment of the "on-the-fly" electronic structure within the quantum wavepacket ab initio molecular dynamics (QWAIMD) method for coupled treatment of quantum nuclear effects with electronic structural effects. Here, multiple single-particle electronic density matrices are simultaneously propagated with a quantum nuclear wavepacket and other classical nuclear degrees of freedom. The multiple density matrices are coupled through a nonorthogonal configuration interaction (NOCI) procedure to construct the instantaneous potential surface. An adaptive-mesh-guided set of basis functions composed of Gaussian primitives are used to simplify the electronic structure calculations. Specifically, with the replacement of the atom-centered basis functions positioned on the centers of the quantum-mechanically treated nuclei by a mesh-guided band of basis functions, the two-electron integrals used to compute the electronic structure potential surface become independent of the quantum nuclear variable and hence reusable along the entire Cartesian grid representing the quantum nuclear coordinates. This reduces the computational complexity involved in obtaining a potential surface and facilitates the interpretation of the individual density matrices as representative diabatic states. The parametric nuclear position dependence of the diabatic states is evaluated at the initial time-step using a Shannon-entropy-based sampling function that depends on an approximation to the quantum nuclear wavepacket and the potential surface. This development is meant as a precursor to an on-the-fly fully multireference electronic structure procedure embedded, on-the-fly, within a quantum nuclear dynamics formalism. We benchmark the current development by computing structural, dynamic, and spectroscopic features for a series of bihalide hydrogen-bonded systems: FHF(-), ClHCl(-), BrHBr(-), and BrHCl(-). We find that the donor-acceptor structural features are in good agreement with experiments. Spectroscopic features are computed using a unified velocity/flux autocorrelation function and include vibrational fundamentals and combination bands. These agree well with experiments and other theories.

Fermi surfaces in Kondo insulators

NASA Astrophysics Data System (ADS)

Liu, Hsu; Hartstein, Máté; Wallace, Gregory J.; Davies, Alexander J.; Ciomaga Hatnean, Monica; Johannes, Michelle D.; Shitsevalova, Natalya; Balakrishnan, Geetha; Sebastian, Suchitra E.

2018-04-01

We report magnetic quantum oscillations measured using torque magnetisation in the Kondo insulator YbB12 and discuss the potential origin of the underlying Fermi surface. Observed quantum oscillations as well as complementary quantities such as a finite linear specific heat capacity in YbB12 exhibit similarities with the Kondo insulator SmB6, yet also crucial differences. Small heavy Fermi sections are observed in YbB12 with similarities to the neighbouring heavy fermion semimetallic Fermi surface, in contrast to large light Fermi surface sections in SmB6 which are more similar to the conduction electron Fermi surface. A rich spectrum of theoretical models is suggested to explain the origin across different Kondo insulating families of a bulk Fermi surface potentially from novel itinerant quasiparticles that couple to magnetic fields, yet do not couple to weak DC electric fields.

Nonlinear electron transport mobility in asymmetric wide quantum well structure

NASA Astrophysics Data System (ADS)

Nayak, Rasmita K.; Das, Sudhakar; Panda, Ajit K.; Sahu, Trinath

2018-05-01

The nonlinearity of multisubband electron mobility µ in a GaAs/AlxGa1-xAs wide quantum well structure is studied by varying the well width w and doping concentration Nd b (Nd t ) lying in the bottom (top) barrier. The electrons diffuse into the well and accumulate near the interfaces forming two sheets of coupled two dimensional electron gases equivalent to a double quantum well structure. We show that interchange of doping concentrations N db and N dt lead to the enhancement of µ as a function of w as long as N dt > N db , even though the surface electron density remains unaltered. Further, keeping Nd b unchanged, variation of Nd t leads to nonlinearity in µ near the resonance of subband states at Nd t = Nd b at which the subband energy levels exhibit anticrossing. The variation of µ becomes prominent by increasing the well width and resonant doping concentration. The nonlinearity in µ is mostly because of the change in the interface roughness scattering potential through intersubband effects due to the substantial changes in the distributions of the subband wave functions around resonance. Our results of nonmonotonic variation of µ can be utilized for low temperature coupled quantum well devices.

Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

NASA Technical Reports Server (NTRS)

Adams, Michael J. (Editor)

1987-01-01

The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-x Bi x /GaAs quantum wells

NASA Astrophysics Data System (ADS)

Luna, E.; Wu, M.; Hanke, M.; Puustinen, J.; Guina, M.; Trampert, A.

2016-08-01

In this work, we report on the spontaneous formation of ordered arrays of nanometer-sized Bi-rich structures due to lateral composition modulations in Ga(As,Bi)/GaAs quantum wells grown by molecular beam epitaxy. The overall microstructure and chemical distribution is investigated using transmission electron microscopy. The information is complemented by synchrotron x-ray grazing incidence diffraction, which provides insight into the in-plane arrangement. Due to the vertical inheritance of the lateral modulation, the Bi-rich nanostructures eventually shape into a three-dimensional assembly. Whereas the Bi-rich nanostructures are created via two-dimensional phase separation at the growing surface, our results suggest that the process is assisted by Bi segregation which is demonstrated to be strong and more complex than expected, implying both lateral and vertical (surface segregation) mass transport. As demonstrated here, the inherent thermodynamic miscibility gap of Ga(As,Bi) alloys can be exploited to create highly uniform Bi-rich units embedded in a quantum confinement structure.

Analytical coupled-wave model for photonic crystal surface-emitting quantum cascade lasers.

PubMed

Wang, Zhixin; Liang, Yong; Yin, Xuefan; Peng, Chao; Hu, Weiwei; Faist, Jérôme

2017-05-15

An analytical coupled-wave model is developed for surface-emitting photonic-crystal quantum cascade lasers (PhC-QCLs). This model provides an accurate and efficient analysis of full three-dimensional device structure with large-area cavity size. Various laser properties of interest including the band structure, mode frequency, cavity loss, mode intensity profile, and far field pattern (FFP), as well as their dependence on PhC structures and cavity size, are investigated. Comparison with numerical simulations confirms the accuracy and validity of our model. The calculated FFP and polarization profile well explain the previously reported experimental results. In particular, we reveal the possibility of switching the lasing modes and generating single-lobed FFP by properly tuning PhC structures.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Recent Advances and Perspectives on Nonadiabatic Mixed Quantum-Classical Dynamics.

PubMed

Crespo-Otero, Rachel; Barbatti, Mario

2018-05-16

Nonadiabatic mixed quantum-classical (NA-MQC) dynamics methods form a class of computational theoretical approaches in quantum chemistry tailored to investigate the time evolution of nonadiabatic phenomena in molecules and supramolecular assemblies. NA-MQC is characterized by a partition of the molecular system into two subsystems: one to be treated quantum mechanically (usually but not restricted to electrons) and another to be dealt with classically (nuclei). The two subsystems are connected through nonadiabatic couplings terms to enforce self-consistency. A local approximation underlies the classical subsystem, implying that direct dynamics can be simulated, without needing precomputed potential energy surfaces. The NA-MQC split allows reducing computational costs, enabling the treatment of realistic molecular systems in diverse fields. Starting from the three most well-established methods-mean-field Ehrenfest, trajectory surface hopping, and multiple spawning-this review focuses on the NA-MQC dynamics methods and programs developed in the last 10 years. It stresses the relations between approaches and their domains of application. The electronic structure methods most commonly used together with NA-MQC dynamics are reviewed as well. The accuracy and precision of NA-MQC simulations are critically discussed, and general guidelines to choose an adequate method for each application are delivered.

High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

NASA Astrophysics Data System (ADS)

Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.

2018-03-01

InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V-1 s-1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1 that dominates the polar-optical mode scattering from  ˜70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells.

PubMed

Mauger, S J C; Bozkurt, M; Koenraad, P M; Zhao, Y; Folliot, H; Bertru, N

2016-07-20

An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequences during interface formation on the optical properties of InGaAs/AlAsSb quantum wells. Our cross-sectional scanning tunneling microscopy results show that the onset of the Sb profile is steep in the Sb-containing layers whereas an appreciable segregation of Sb in the subsequently grown Sb free layers is observed. The steep rise of the Sb profile is due to extra Sb that is supplied to the surface prior to the growth of the Sb-containing layers. No relation is found between the (As,Sb) termination conditions of the Sb-containing layers and the resulting Sb profiles in the capping layers. Correspondingly we see that the optical properties of these quantum wells are also nearly independent on the (As,Sb) shutter sequences at the interface. Digital alloy growth in comparison to conventional molecular beam epitaxy growth was also explored. X-ray results suggest that the structural properties of the quantum well structures grown by conventional molecular beam epitaxy techniques are slightly better than those formed by digital alloy growth. However photoluminescence studies indicate that the digital alloy samples give rise to a more intense and broader photoluminescence emission. Cross-sectional scanning tunneling microscopy measurements reveal that lateral composition modulations present in the digital alloys are responsible for the enhancement of the photoluminescence intensity and inhomogeneous broadening.

Spatial Light Modulators with Arbitrary Quantum Well Profiles

DTIC Science & Technology

1991-01-14

vertical cavity surface emitting lasers ( VCSEL ) is also...aDlications stemming from the research effort. An application of the MBE compositional grading technique to vertical cavity surface emitting lasers was described in section 2e. G. Other statements ... cavity surface emitting laser ( VCSEL ). This uses compositionally graded Bragg reflectors to reduce the electrical resistance of the mirrors

Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

PubMed

Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

2015-09-25

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector

NASA Technical Reports Server (NTRS)

Nelson, Thomas R., Jr.; Loehr, John P.; Fork, Richard L.; Cole, Spencer; Jones, Darryl K.; Keys, Andrew

1999-01-01

There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Yoshitake; Dapkus, P. Daniel

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaNmore » QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.« less

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

NASA Astrophysics Data System (ADS)

Nakajima, Yoshitake; Dapkus, P. Daniel

2016-08-01

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

Coupling strategies for coherent operation of quantum cascade ring laser arrays

NASA Astrophysics Data System (ADS)

Schwarzer, Clemens; Yao, Y.; Mujagić, E.; Ahn, S.; Schrenk, W.; Chen, J.; Gmachl, C.; Strasser, G.

2011-12-01

We report the design, fabrication and operation of coherently coupled ring cavity surface emitting quantum cascade lasers, emitting at wavelength around 8 μm. Special emphasis is placed on the evaluation of optimal coupling approaches and corresponding parameters. Evanescent field coupling as well as direct coupling where both devices are physically connected is presented. Furthermore, exploiting the Vernier-effect was used to obtain enhanced mode selectivity and robust coherent coupling of two ring-type quantum cascade lasers. Investigations were performed at pulsed room-temperature operation.

Matrix addressable vertical cavity surface emitting laser array

NASA Astrophysics Data System (ADS)

Orenstein, M.; von Lehmen, A. C.; Chang-Hasnain, C.; Stoffel, N. G.; Harbison, J. P.

1991-02-01

The design, fabrication and characterization of 1024-element matrix-addressable vertical-cavity surface-emitting laser (VCSEL) arrays are described. A strained InGaAs quantum-well VCSEL structure was grown by MBE, and an array of 32 x 32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8 percent.

Superconductivity mediated by quantum critical antiferromagnetic fluctuations: the rise and fall of hot spots

NASA Astrophysics Data System (ADS)

Wang, Xiaoyu; Schattner, Yoni; Berg, Erez; Fernandes, Rafael

The maximum transition temperature Tc observed in the phase diagrams of several unconventional superconductors takes place in the vicinity of a putative antiferromagnetic quantum critical point. This observation motivated the theoretical proposal that superconductivity in these systems may be driven by quantum critical fluctuations, which in turn can also promote non-Fermi liquid behavior. In this talk, we present a combined analytical and sign-problem-free Quantum Monte Carlo investigation of the spin-fermion model - a widely studied low-energy model for the interplay between superconductivity and magnetic fluctuations. By engineering a series of band dispersions that interpolate between near-nested and open Fermi surfaces, and by also varying the strength of the spin-fermion interaction, we find that the hot spots of the Fermi surface provide the dominant contribution to the pairing instability in this model. We show that the analytical expressions for Tc and for the pairing susceptibility, obtained within a large-N Eliashberg approximation to the spin-fermion model, agree well with the Quantum Monte Carlo data, even in the regime of interactions comparable to the electronic bandwidth. DE-SC0012336.

Energy Levels in Quantum Wells.

NASA Astrophysics Data System (ADS)

Zang, Jan Xin

Normalized analytical equations for eigenstates of an arbitrary one-dimensional configuration of square potentials in a well have been derived. The general formulation is used to evaluate the energy levels of a particle in a very deep potential well containing seven internal barriers. The configuration can be considered as a finite superlattice sample or as a simplified model for a sample with only several atom layers. The results are shown in graphical forms as functions of the height and width of the potential barriers and as functions of the ratio of the effective mass in barrier to the mass in well. The formation of energy bands and surface eigenstates from eigenstates of a deep single well, the coming close of two energy bands and a surface state which are separate ordinarily, and mixing of the wave function of a surface state with the bulk energy bands are seen. Then the normalized derivation is extended to study the effect of a uniform electric field applied across a one-dimensional well containing an internal configuration of square potentials The general formulation is used to calculate the electric field dependence of the energy levels of a deep well with five internal barriers. Typical results are shown in graphical forms as functions of the barrier height, barrier width, barrier effective mass and the field strength. The formation of Stark ladders and surface states from the eigenstates of a single deep well in an electric field, the localization process of wave functions with changing barrier height, width, and field strength and their anticrossing behaviors are seen. The energy levels of a hydrogenic impurity in a uniform medium and in a uniform magnetic field are calculated with variational methods. The energy eigenvalues for the eigenstates with major quantum number less than or equal to 3 are obtained. The results are consistent with previous results. Furthermore, the energy levels of a hydrogenic impurity at the bottom of a one-dimensional parabolic quantum well with a magnetic field normal to the plane of the well are calculated with the finite-basis-set variational method. The limit of small radial distance and the limit of great radial distance are considered to choose a set of proper basis functions. It is found that the energy levels increase with increasing parabolic parameter alpha and increase with increasing normalized magnetic field strength gamma except those levels with magnetic quantum number m < 0 at small gamma.

Morphological instability of GaAs (7 1 1)A: A transition between (1 0 0) and (5 1 1) terraces

NASA Astrophysics Data System (ADS)

Yazdanpanah, V. R.; Wang, Zh. M.; Salamo, G. J.

2005-06-01

We report on the use of reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) study that indicates that the GaAs (7 1 1)A is right at the transition between vicinal GaAs (1 0 0) and vicinal GaAs (5 1 1)A surfaces and that a variation of the As overpressure switches the surface morphology between the two vicinal surfaces. The steps on the vicinal (1 0 0) surface have a width of 1.5 nm creating a staircase surface with excellent possibilities for growth of quantum wells. As-rich conditions can be described by vicinal (5 1 1)A surfaces with a width of 3.5 nm. This surface could find applications as a template for quantum wire growth. The observation suggests that the transition between these two morphologies is understandable based on the increase in surface energy of a vicinal (1 0 0) surface as the step separation approaches the dimer reconstructed separation.

Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE

NASA Astrophysics Data System (ADS)

Pitts, O. J.; Watkins, S. P.; Wang, C. X.; Stotz, J. A. H.; Meyer, T. A.; Thewalt, M. L. W.

2004-09-01

Heterostructures containing monolayer (ML) and submonolayer GaSb insertions in GaAs were grown using organometallic vapour phase epitaxy. At the GaAs-on-GaSb interface, strong intermixing occurs due to the surface segregation of Sb. To form structures with relatively abrupt interfaces, a flashoff growth sequence, in which growth interruptions are employed to desorb Sb from the surface, was introduced. Reflectance-difference spectroscopy and high-resolution X-ray diffraction data demonstrate that interfacial grading is strongly reduced by this procedure. For layer structures grown with the flashoff sequence, a GaSb coverage up to 1 ML can be obtained in the two-dimensional (2D) growth mode. For uncapped GaSb layers, on the other hand, atomic force microscope images show that the 2D-3D growth mode transition occurs at a submonolayer coverage between 0.3 and 0.5 ML. Low-temperature photoluminescence spectra of multiple quantum well samples grown using the flashoff sequence show a strong quantum well-related peak which shifts to lower energies as the amount of Sb incorporated increases. The PL peak energies are consistent with a type-II band lineup at the GaAs/GaSb interface.

InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

NASA Astrophysics Data System (ADS)

Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

2018-03-01

We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

FAST TRACK COMMUNICATION: Graphene based quantum dots

NASA Astrophysics Data System (ADS)

Zhang, H. G.; Hu, H.; Pan, Y.; Mao, J. H.; Gao, M.; Guo, H. M.; Du, S. X.; Greber, T.; Gao, H.-J.

2010-08-01

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

Graphene based quantum dots.

PubMed

Zhang, H G; Hu, H; Pan, Y; Mao, J H; Gao, M; Guo, H M; Du, S X; Greber, T; Gao, H-J

2010-08-04

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

Investigation on surface-plasmon-enhanced light emission of InGaN/GaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Yu, Zhenzhong; Li, Qiang; Fan, Qigao; Zhu, Yixin

2018-05-01

We demonstrate surface-plasmon (SP) enhanced light emission from InGaN/GaN near ultraviolet (NUV) multiple quantum wells (MQWs) using Ag thin films and nano-particles (NPs). Two types of Ag NP arrays are fabricated on the NUV-MQWs, one is fabricated on p-GaN layer with three different sizes of about 120, 160 and 240 nm formed by self-assembled process, while the other is embedded close to the MQWs. In addition, the influence of the surface plasmon polariton (SPP) and localized surface plasmon (LSP) in NUV-MQWs has been investigated by photoluminescence (PL) measurement. Both PL measurements and theoretical simulation results show that the NUV light would be extracted more effectively under LSP mode than that of SPP mode. The highest enhancement of PL intensity is increased by 324% for the sample with NPs embedded in etched p-GaN near the MQWs as compared with the bare MQWs, also is about 1.24 times higher than the MQW sample covered with Ag NPs on the surface, indicating strong surface scattering and SP coupling between Ag NPs and NUV-MQWs.

Programmable Colloidal Approach to Hierarchical Structures of Methylammonium Lead Bromide Perovskite Nanocrystals with Bright Photoluminescent Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teunis, Meghan B.; Johnson, Merrell A.; Muhoberac, Barry B.

Here, systematic tailoring of nanocrystal architecture could provide unprecedented control over their electronic, photophysical, and charge transport properties for a variety of applications. However, at present, manipulation of the shape of perovskite nanocrystals is done mostly by trial-and-error-based experimental approaches. Here, we report systematic colloidal synthetic strategies to prepare methylammonium lead bromide quantum platelets and quantum cubes. In order to control the nucleation and growth processes of these nano crystals, we appropriately manipulate the solvent system, surface ligand chemistry, and reaction temperature causing syntheses into anisotropic shapes. We demonstrate that both the presence of chlorinated solvent and a long chainmore » aliphatic amine in the reaction mixture are crucial for the formation of ultrathin quantum platelets (similar to 1.5 nm in thickness), which is driven by mesoscale-assisted growth of spherical seed nanocrystals (similar to 1.6 nm in diameter) through attachment of monomers onto selective crystal facets. A combined surface and structural characterization, along with small-angle X-ray scattering analysis, confirm that the long hydrocarbon of the aliphatic amine is responsible for the well ordered hierarchical stacking of the quantum platelets of 3.5 nm separation. In contrast, the formation of similar to 12 nm edge-length quantum cubes is a kinetically driven process in which a high flux of monomers is achieved by supplying thermal energy. The photoluminescence quantum yield of our quantum platelets (similar to 52%) is nearly 2-fold higher than quantum cubes. Moreover, the quantum platelets display a lower nonradiative rate constant than that found with quantum cubes, which suggests less surface trap states. Together, our research has the potential both to improve the design of synthetic methods for programmable control of shape and assembly and to provide insight into optoelectronic properties of these materials for solid-state device fabrication, e.g., light-emitting diodes, solar cells, and lasing materials.« less

Programmable Colloidal Approach to Hierarchical Structures of Methylammonium Lead Bromide Perovskite Nanocrystals with Bright Photoluminescent Properties

DOE PAGES

Teunis, Meghan B.; Johnson, Merrell A.; Muhoberac, Barry B.; ...

2017-04-05

Here, systematic tailoring of nanocrystal architecture could provide unprecedented control over their electronic, photophysical, and charge transport properties for a variety of applications. However, at present, manipulation of the shape of perovskite nanocrystals is done mostly by trial-and-error-based experimental approaches. Here, we report systematic colloidal synthetic strategies to prepare methylammonium lead bromide quantum platelets and quantum cubes. In order to control the nucleation and growth processes of these nano crystals, we appropriately manipulate the solvent system, surface ligand chemistry, and reaction temperature causing syntheses into anisotropic shapes. We demonstrate that both the presence of chlorinated solvent and a long chainmore » aliphatic amine in the reaction mixture are crucial for the formation of ultrathin quantum platelets (similar to 1.5 nm in thickness), which is driven by mesoscale-assisted growth of spherical seed nanocrystals (similar to 1.6 nm in diameter) through attachment of monomers onto selective crystal facets. A combined surface and structural characterization, along with small-angle X-ray scattering analysis, confirm that the long hydrocarbon of the aliphatic amine is responsible for the well ordered hierarchical stacking of the quantum platelets of 3.5 nm separation. In contrast, the formation of similar to 12 nm edge-length quantum cubes is a kinetically driven process in which a high flux of monomers is achieved by supplying thermal energy. The photoluminescence quantum yield of our quantum platelets (similar to 52%) is nearly 2-fold higher than quantum cubes. Moreover, the quantum platelets display a lower nonradiative rate constant than that found with quantum cubes, which suggests less surface trap states. Together, our research has the potential both to improve the design of synthetic methods for programmable control of shape and assembly and to provide insight into optoelectronic properties of these materials for solid-state device fabrication, e.g., light-emitting diodes, solar cells, and lasing materials.« less

Enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by coupling to Au-nanoparticle plasmons

NASA Astrophysics Data System (ADS)

Xing, Jieying; Chen, Yinsong; Liu, Yuebo; Liang, Jiezhi; Chen, Jie; Ren, Yuan; Han, Xiaobiao; Zhong, Changming; Yang, Hang; Huang, Dejia; Hou, Yaqian; Wu, Zhisheng; Liu, Yang; Zhang, Baijun

2018-05-01

We demonstrate the enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by nearly a factor of 2 by coupling them to localized surface plasmons of Au nano-particles (NPs). The Au NPs are fabricated in situ on the nanorods using a Ni/SiO2/Au/SiNx compound functional layer. This layer serves as a combination dry-etch mask for fabricating the nanorods and the Au NPs, as well as providing isolation necessary to prevent fluorescence quenching. Time-resolved photoluminescence measurements confirm that emission enhancement originates from the coupling.

Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

PubMed

Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

2015-04-28

Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors.

Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

NASA Astrophysics Data System (ADS)

Schuster, Jonathan; Bellotti, Enrico

2013-06-01

We have investigated the quantum effiency in HgCdTe photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars intended to provide broadband operation. We have found that the quantum efficiency depends heavily on the passivation of the pillar surface. Pillars passivated with anodicoxide have a large fixed positive charge on the pillar surface. We use our three-dimensional numerical simulation model to study the effect of surface charge and surface recombination velocity on the exterior of the pillars. We then evaluate the quantum efficiency of this structure subject to different surface conditions. We have found that by themselves, the surface charge and surface recombination are detrimental to the quantum efficiency but the quantum efficiency is recovered when both phenomena are present. We will discuss the effects of these phenomena and the trade offs that exist between the two.

Extreme Soft Limit Observation of Quantum Hall Effect in a 3-d Semiconductor

NASA Astrophysics Data System (ADS)

Bleiweiss, Michael; Yin, Ming; Amirzadeh, Jafar; Preston, Harry; Datta, Timir

2004-03-01

We report on the evidence for quantum hall effect at 38K and in magnetic fields (B) as low as 1k-Orsted. Our specimens were semiconducting, carbon replica opal (CRO) structures. CRO are three dimensional bulk systems where the carbon is grown by CVD into the porous regions in artificial silica opals. The carbon forms layers on top of the silica spheres as eggshells. The shells are of uneven thickness and are perforated at the contacts points of the opal spheres and form a closed packed, three dimensional crystal structure. Plateaus in inverse R_xy that are conjugated with well-defined Subnikov-deHass modulations in R_xx were observed. The quantum steps that are particularly prominent were the states with fill factors v = p/q (p,q are integers) were the well know fractions, 1/3, 1/2, 3/5, 1 and 5/2. QHE steps indicate that the carriers are localized in two-dimensional regions, which may be due to the extremely large surface to volume ratio associated with replica opal structure. From the B-1 vs v straight line, the effective surface carrier density, ns = 2.2 x 10^14 m-2. To the best of our knowledge, the current work is the first to report fractional quantum hall plateaus in a bulk system.

Photoemission intensity oscillations from quantum-well states in the Ag/V(100) overlayer system

NASA Astrophysics Data System (ADS)

Milun, M.; Pervan, P.; Gumhalter, B.; Woodruff, D. P.

1999-02-01

Extensive measurements have been made of the photoemission intensities recorded along the surface normal from quantum-well (QW) states of pseudomorphic Ag layers on V(100) in thicknesses from 1-7 ML as a function of photon energy in the range 15-45 eV. In all cases the QW states lead to intense peaks in the photoemission spectra which show strong oscillations in intensity with photon energy, the energy period of the oscillations becoming shorter as the films become thicker. These effects are explained in terms of interference of surface and interfaces photoemission from the sharp changes in potential at the well boundaries, and a semiquantitative description is achieved via calculations based on a simple asymmetric square-well description in the Adawi formulation of surface photoemission. An alternative picture in which intensity peaks are predicted to correspond to the conditions for direct transitions from bulk states of the overlayer material at the same initial-state energy is shown to be in direct contradiction with some of our observations. The reason for this failure, and the relationship of alternative views of the physical processes, are discussed.

Transversal Clifford gates on folded surface codes

DOE PAGES

Moussa, Jonathan E.

2016-10-12

Surface and color codes are two forms of topological quantum error correction in two spatial dimensions with complementary properties. Surface codes have lower-depth error detection circuits and well-developed decoders to interpret and correct errors, while color codes have transversal Clifford gates and better code efficiency in the number of physical qubits needed to achieve a given code distance. A formal equivalence exists between color codes and folded surface codes, but it does not guarantee the transferability of any of these favorable properties. However, the equivalence does imply the existence of constant-depth circuit implementations of logical Clifford gates on folded surfacemore » codes. We achieve and improve this result by constructing two families of folded surface codes with transversal Clifford gates. This construction is presented generally for qudits of any dimension. Lastly, the specific application of these codes to universal quantum computation based on qubit fusion is also discussed.« less

Purcell effect in triangular plasmonic nanopatch antennas with three-layer colloidal quantum dots

NASA Astrophysics Data System (ADS)

Eliseev, S. P.; Kurochkin, N. S.; Vergeles, S. S.; Sychev, V. V.; Chubich, D. A.; Argyrakis, P.; Kolymagin, D. A.; Vitukhnovskii, A. G.

2017-05-01

A model describing a plasmonic nanopatch antenna based on triangular silver nanoprisms and multilayer cadmium chalcogenide quantum dots is introduced. Electromagnetic-field distributions in nanopatch antennas with different orientations of the quantum-dot dipoles are calculated for the first time with the finite element method for numerical electrodynamics simulations. The energy flux through the surface of an emitting quantum dot is calculated for the configurations with the dot in free space, on an aluminum substrate, and in a nanopatch antenna. It is shown that the radiative part of the Purcell factor is as large as 1.7 × 102 The calculated photoluminescence lifetimes of a CdSe/CdS/ZnS colloidal quantum dot in a nanopatch antenna based on a silver nanoprism agree well with the experimental results.

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2015-02-07

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, andmore » therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.« less

Effects of surface and interface traps on exciton and multi-exciton dynamics in core/shell quantum dots

NASA Astrophysics Data System (ADS)

Bozio, Renato; Righetto, Marcello; Minotto, Alessandro

2017-08-01

Exciton interactions and dynamics are the most important factors determining the exceptional photophysical properties of semiconductor quantum dots (QDs). In particular, best performances have been obtained for ingeniously engineered core/shell QDs. We have studied two factors entering in the exciton decay dynamics with adverse effects for the luminescence efficiency: exciton trapping at surface and interface traps, and non-radiative Auger recombination in QDs carrying either net charges or multiple excitons. In this work, we present a detailed study into the optical absorption, fluorescence dynamics and quantum yield, as well as ultrafast transient absorption properties of CdSe/CdS, CdSe/Cd0.5Zn0.5S, and CdSe/ZnS QDs as a function of shell thickness. It turns out that de-trapping processes play a pivotal role in determining steady state emission properties. By studying the excitation dependent photoluminescence quantum yields (PLQY) in different CdSe/CdxZn1-xS (x = 0, 0.5, 1) QDs, we demonstrate the different role played by hot and cold carrier trapping rates in determining fluorescence quantum yields. Finally, the use of global analysis allows us untangling the complex ultrafast transient absorption signals. Smoothing of interface potential, together with effective surface passivation, appear to be crucial factors in slowing down both Auger-based and exciton trapping recombination processes.

High-fidelity operations in microfabricated surface ion traps

NASA Astrophysics Data System (ADS)

Maunz, Peter

2017-04-01

Trapped ion systems can be used to implement quantum computation as well as quantum simulation. To scale these systems to the number of qubits required to solve interesting problems in quantum chemistry or solid state physics, the use of large multi-zone ion traps has been proposed. Microfabrication enables the realization of surface electrode ion traps with complex electrode structures. While these traps may enable the scaling of trapped ion quantum information processing (QIP), microfabricated ion traps also pose several technical challenges. Here, we present Sandia's trap fabrication capabilities and characterize trap properties and shuttling operations in our most recent high optical access trap (HOA-2). To demonstrate the viability of Sandia's microfabricated ion traps for QIP we realize robust single and two-qubit gates and characterize them using gate set tomography (GST). In this way we are able to demonstrate the first single qubit gates with a diamond norm of less than 1 . 7 ×10-4 , below a rigorous fault tolerance threshold for general noise of 6 . 7 ×10-4. Furthermore, we realize Mølmer-Sørensen two qubit gates with a process fidelity of 99 . 58(6) % also characterized by GST. These results demonstrate the viability of microfabricated surface traps for state of the art quantum information processing demonstrations. This research was funded, in part, by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA).

An Ab Initio Full Potential Fully Relativistic Study of the (0001) Surface of Double Hexagonal Close Packed Americium*

NASA Astrophysics Data System (ADS)

Gao, Da; Ray, Asok

2007-03-01

The electronic and geometric properties of bulk dhcp Am as well as quantum size effects in the surface energies and the work functions of the dhcp Am (0001) ultra thin films up to seven layers have been examined at nonmagnetic, ferromagnetic, and anti-ferromagnetic configurations via full-potential all-electron density-functional calculations with a mixed APW+lo/LAPW basis. The anti-ferromagnetic state including spin-orbit coupling is found to be the ground state of both bulk and the (0001) surface of dhcp Am with the 5f electrons primarily localized. Our results show that magnetic configurations and spin-orbit coupling play important roles in determining the equilibrium lattice constant, the bulk modulus as well as the localized feature of 5f electrons for dhcp Am. Quantum size effects are found to be more pronounced in work functions than in surface energies. *This work is supported by the Chemical Sciences, Geosciences and Biosciences Division, Office of Basic Energy Sciences, Office of Science, U. S. Department of Energy and the Welch Foundation, Houston, Texas.

New ab initio potential surfaces and three-dimensional quantum dynamics for transition state spectroscopy in ozone photodissociation

NASA Astrophysics Data System (ADS)

Yamashita, Koichi; Morokuma, Keiji; Le Quéré, Frederic; Leforestier, Claude

1992-04-01

New ab initio potential energy surfaces (PESs) of the ground and B ( 1B 2) states of ozone have been calculated with the CASSCF-SECI/DZP method to describe the three-dimensional photodissociation process. The dissociation energy of the ground state and the vertical barrier height of the B PES are obtained to be 0.88 and 1.34 eV, respectively, in better agreement with the experimental values than the previous calculation. The photodissociation autocorrelation function, calculated on the new B PES, based on exact three-dimensional quantum dynamics, reproduces well the main recurrence feature extracted from the experimental spectra.

Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

NASA Astrophysics Data System (ADS)

Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

2013-03-01

By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

Time-resolved energy transduction in a quantum capacitor

PubMed Central

Jung, Woojin; Cho, Doohee; Kim, Min-Kook; Choi, Hyoung Joon; Lyo, In-Whan

2011-01-01

The capability to deposit charge and energy quantum-by-quantum into a specific atomic site could lead to many previously unidentified applications. Here we report on the quantum capacitor formed by a strongly localized field possessing such capability. We investigated the charging dynamics of such a capacitor by using the unique scanning tunneling microscopy that combines nanosecond temporal and subangstrom spatial resolutions, and by using Si(001) as the electrode as well as the detector for excitations produced by the charging transitions. We show that sudden switching of a localized field induces a transiently empty quantum dot at the surface and that the dot acts as a tunable excitation source with subangstrom site selectivity. The timescale in the deexcitation of the dot suggests the formation of long-lived, excited states. Our study illustrates that a quantum capacitor has serious implications not only for the bottom-up nanotechnology but also for future switching devices. PMID:21817067

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

NASA Astrophysics Data System (ADS)

Tang, Jiuyao; Kawakami, Yoichi; Fujita, Shizuo; Fujita, Shigeo

1996-10-01

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Quasi-classical approaches to vibronic spectra revisited

NASA Astrophysics Data System (ADS)

Karsten, Sven; Ivanov, Sergei D.; Bokarev, Sergey I.; Kühn, Oliver

2018-03-01

The framework to approach quasi-classical dynamics in the electronic ground state is well established and is based on the Kubo-transformed time correlation function (TCF), being the most classical-like quantum TCF. Here we discuss whether the choice of the Kubo-transformed TCF as a starting point for simulating vibronic spectra is as unambiguous as it is for vibrational ones. Employing imaginary-time path integral techniques in combination with the interaction representation allowed us to formulate a method for simulating vibronic spectra in the adiabatic regime that takes nuclear quantum effects and dynamics on multiple potential energy surfaces into account. Further, a generalized quantum TCF is proposed that contains many well-established TCFs, including the Kubo one, as particular cases. Importantly, it also provides a framework to construct new quantum TCFs. Applying the developed methodology to the generalized TCF leads to a plethora of simulation protocols, which are based on the well-known TCFs as well as on new ones. Their performance is investigated on 1D anharmonic model systems at finite temperatures. It is shown that the protocols based on the new TCFs may lead to superior results with respect to those based on the common ones. The strategies to find the optimal approach are discussed.

Sb surfactant mediated growth of InAs/AlAs{sub 0.56}Sb{sub 0.44} strained quantum well for intersubband absorption at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yu; Bertru, Nicolas; Folliot, Hervé

Surfactant mediated growth of strained InAs/AlAs{sub 0.56}Sb{sub 0.44} quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as 7 ML, without defect was achieved by Sb surfactant mediated growth. Further high resolution transmission electron microscopy measurement and geometric phase analysis show that InAs/AlAsSb interfaces are not abrupt. At InAs on AlAsSb interface, the formation of a layer presenting lattice parameter lower than InP leadsmore » to a tensile stress. From energetic consideration, the formation of As rich AlAsSb layer at interface is deduced. At AlAsSb on InAs interface, a compressive layer is formed. The impact on optical properties and the chemical composition of this layer are discussed from microscopic analysis and photoluminescence experiments.« less

Plasmaron excitations in p(2×2)-K/graphite

NASA Astrophysics Data System (ADS)

Chis, V.; Silkin, V. M.; Hellsing, B.

2014-05-01

Plasmarons formed by the compound of photoelectrons and acoustic surface-plasmon excitations is investigated in the system p(2×2)-K/graphite. The physics behind this type of plasmarons (e plasmarons) differs from the physics of plasmarons recently found in graphene, where the loss feature is argued to result from the photohole-plasmon interaction (h plasmarons). Based on first principles methods we calculate the dispersion of the e-plasmaron excitation rate, which yields a broad feature below the parabolic quantum-well band with a peak about 0.4 eV below the quantum-well band at the Γ¯ point.

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

DOE PAGES

Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; ...

2015-10-07

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n α, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantummore » wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

NASA Astrophysics Data System (ADS)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

Spectroscopy of Single Free Standing Quantum Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, M D; Hollars, C W; Huser, T

2006-03-14

We investigated the interaction of quantum confined exciton states GaAs quantum wells with native surface states. Single molecule photoluminescence (PL) spectroscopy, developed by T. Huser at LLNL was used to probe the unique bare quantum wells in the free standing quantum well structure. The latter was developed by the M. D. Williams at Clark Atlanta University. The goals of the project during this budget cycle were to procure samples containing GaAs free standing QWs, identify suitable regions for PL analysis at Lawrence Livermore, analyze the structures at room temperature and at liquid nitrogen temperatures. The specific regions of interest onmore » the sample structures were identified by scanning electron microscopy at Clark Atlanta prior to transport to LLNL. Previous attempts at other facilities using NSOM, cathodoluminescence, and conventional PL showed little luminescence activity at room temperature from the 200 {angstrom} thick wells. This suggested either excess recombination due to surface states in the quantum well region or insufficient absorption length for photoluminescence. The literature suggested that the effect of the defects could be eliminated by reducing the sample temperature below their associated activation energies. In our previous subcontract work with LLNL, a significant amount of effort was expended to modify the apparatus to allow low temperature measurements. The modifications were not successful and we concluded that in order to do the measurements at low temperature we would need to purchase a commercial optical cryostat to get reliable results. Ms. Rochelle Bryant worked during the summer as an intern at LLNL on the project under the supervision of C. Hollars and in collaboration with T. Huser and found that PL emission could be obtained at room temperature. This was a surprising result as the literature and our experience shows that there is no PL emission from GaAs at room temperature. We speculate that this is due to the small interaction region excited by the laser source. We proceeded with the project using this new found room temperature capability and have analyzed the effect of various chemical species on the PL emission from the GaAs QWs. We were able to observe some significant intensity modifications of the PL spectra with chemical adsorbants. This progress holds promise for the development of this structure as a chemical or biological sensor.« less

Topological approach to quantum Hall effects and its important applications: higher Landau levels, graphene and its bilayer

NASA Astrophysics Data System (ADS)

Jacak, Janusz; Łydżba, Patrycja; Jacak, Lucjan

2017-05-01

In this paper the topological approach to quantum Hall effects is carefully described. Commensurability conditions together with proposed generators of a system braid group are employed to establish the fractional quantum Hall effect hierarchies of conventional semiconductors, monolayer and bilayer graphene structures. Obtained filling factors are compared with experimental data and a very good agreement is achieved. Preliminary constructions of ground-state wave functions in the lowest Landau level are put forward. Furthermore, this work explains why pyramids of fillings from higher bands are not counterparts of the well-known composite-fermion hierarchy - it provides with the cause for an intriguing robustness of ν = 7/3 , 8/3 and 5/2 states (also in graphene). The argumentation why paired states can be developed in two-subband systems (wide quantum wells) only when the Fermi energy lies in the first Landau level is specified. Finally, the paper also clarifies how an additional surface in bilayer systems contributes to an observation of the fractional quantum Hall effect near half-filling, ν = 1/2 .

Aggregation-induced emission in lamellar solids of colloidal perovskite quantum wells

PubMed Central

Jagielski, Jakub; Kumar, Sudhir; Wang, Mingchao; Scullion, Declan; Lawrence, Robert; Li, Yen-Ting; Yakunin, Sergii; Tian, Tian; Kovalenko, Maksym V.; Chiu, Yu-Cheng; Santos, Elton J. G.; Lin, Shangchao; Shih, Chih-Jen

2017-01-01

The outstanding excitonic properties, including photoluminescence quantum yield (ηPL), of individual, quantum-confined semiconductor nanoparticles are often significantly quenched upon aggregation, representing the main obstacle toward scalable photonic devices. We report aggregation-induced emission phenomena in lamellar solids containing layer-controlled colloidal quantum wells (QWs) of hybrid organic-inorganic lead bromide perovskites, resulting in anomalously high solid-state ηPL of up to 94%. Upon forming the QW solids, we observe an inverse correlation between exciton lifetime and ηPL, distinct from that in typical quantum dot solid systems. Our multiscale theoretical analysis reveals that, in a lamellar solid, the collective motion of the surface organic cations is more restricted to orient along the [100] direction, thereby inducing a more direct bandgap that facilitates radiative recombination. Using the QW solids, we demonstrate ultrapure green emission by completely downconverting a blue gallium nitride light-emitting diode at room temperature, with a luminous efficacy higher than 90 lumen W−1 at 5000 cd m−2, which has never been reached in any nanomaterial assemblies by far. PMID:29282451

High Quantum Yield Blue Emission from Lead-Free Inorganic Antimony Halide Perovskite Colloidal Quantum Dots.

PubMed

Zhang, Jian; Yang, Ying; Deng, Hui; Farooq, Umar; Yang, Xiaokun; Khan, Jahangeer; Tang, Jiang; Song, Haisheng

2017-09-26

Colloidal quantum dots (QDs) of lead halide perovskite have recently received great attention owing to their remarkable performances in optoelectronic applications. However, their wide applications are hindered from toxic lead element, which is not environment- and consumer-friendly. Herein, we utilized heterovalent substitution of divalent lead (Pb 2+ ) with trivalent antimony (Sb 3+ ) to synthesize stable and brightly luminescent Cs 3 Sb 2 Br 9 QDs. The lead-free, full-inorganic QDs were fabricated by a modified ligand-assisted reprecipitation strategy. A photoluminescence quantum yield (PLQY) was determined to be 46% at 410 nm, which was superior to that of other reported halide perovskite QDs. The PL enhancement mechanism was unraveled by surface composition derived quantum-well band structure and their large exciton binding energy. The Br-rich surface and the observed 530 meV exciton binding energy were proposed to guarantee the efficient radiative recombination. In addition, we can also tune the inorganic perovskite QD (Cs 3 Sb 2 X 9 ) emission wavelength from 370 to 560 nm via anion exchange reactions. The developed full-inorganic lead-free Sb-perovskite QDs with high PLQY and stable emission promise great potential for efficient emission candidates.

Arginine-glycine-aspartic acid-conjugated dendrimer-modified quantum dots for targeting and imaging melanoma.

PubMed

Li, Zhiming; Huang, Peng; Lin, Jing; He, Rong; Liu, Bing; Zhang, Xiaomin; Yang, Sen; Xi, Peng; Zhang, Xuejun; Ren, Qiushi; Cui, Daxiang

2010-08-01

Angiogenesis is essential for the development of malignant tumors and provides important targets for tumor diagnosis and therapy. Quantum dots have been broadly investigated for their potential application in cancer molecular imaging. In present work, CdSe quantum dots were synthesized, polyamidoamine dendrimers were used to modify surface of quantum dots and improve their solubility in water solution. Then, dendrimer-modified CdSe quantum dots were conjugated with arginine-glycine-aspartic acid (RGD) peptides. These prepared nanoprobes were injected into nude mice loaded with melanoma (A375) tumor xenografts via tail vessels, IVIS imaging system was used to image the targeting and bio-distribution of as-prepared nanoprobes. The dendrimer-modified quantum dots exhibit water-soluble, high quantum yield, and good biocompatibility. RGD-conjugated quantum dots can specifically target human umbilical vein endothelial cells (HUVEC) and A375 melanoma cells, as well as nude mice loaded with A735 melanoma cells. High-performance RGD-conjugated dendrimers modified quantum dot-based nanoprobes have great potential in application such as tumor diagnosis and therapy.

Quantum dot properties in the multiband envelope-function approximation using boundary conditions based upon first-principles quantum calculations

NASA Astrophysics Data System (ADS)

Flory, Curt A.; Musgrave, Charles B.; Zhang, Zhiyong

2008-05-01

A number of physical processes involving quantum dots depend critically upon the “evanescent” electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2018-01-01

GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

Significant Quantum Effects in Hydrogen Activation

DOE PAGES

Kyriakou, Georgios; Davidson, Erlend R. M.; Peng, Guowen; ...

2014-03-31

Dissociation of molecular hydrogen is an important step in a wide variety of chemical, biological, and physical processes. Due to the light mass of hydrogen, it is recognized that quantum effects are often important to its reactivity. However, understanding how quantum effects impact the reactivity of hydrogen is still in its infancy. Here, we examine this issue using a well-defined Pd/Cu(111) alloy that allows the activation of hydrogen and deuterium molecules to be examined at individual Pd atom surface sites over a wide range of temperatures. Experiments comparing the uptake of hydrogen and deuterium as a function of temperature revealmore » completely different behavior of the two species. The rate of hydrogen activation increases at lower sample temperature, whereas deuterium activation slows as the temperature is lowered. Density functional theory simulations in which quantum nuclear effects are accounted for reveal that tunneling through the dissociation barrier is prevalent for H 2 up to ~190 K and for D 2 up to ~140 K. Kinetic Monte Carlo simulations indicate that the effective barrier to H 2 dissociation is so low that hydrogen uptake on the surface is limited merely by thermodynamics, whereas the D 2 dissociation process is controlled by kinetics. These data illustrate the complexity and inherent quantum nature of this ubiquitous and seemingly simple chemical process. Here, examining these effects in other systems with a similar range of approaches may uncover temperature regimes where quantum effects can be harnessed, yielding greater control of bond-breaking processes at surfaces and uncovering useful chemistries such as selective bond activation or isotope separation.« less

Low damage dry etch for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

2015-08-01

We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

Roadmap on plasmonics

NASA Astrophysics Data System (ADS)

Stockman, Mark I.; Kneipp, Katrin; Bozhevolnyi, Sergey I.; Saha, Soham; Dutta, Aveek; Ndukaife, Justus; Kinsey, Nathaniel; Reddy, Harsha; Guler, Urcan; Shalaev, Vladimir M.; Boltasseva, Alexandra; Gholipour, Behrad; Krishnamoorthy, Harish N. S.; MacDonald, Kevin F.; Soci, Cesare; Zheludev, Nikolay I.; Savinov, Vassili; Singh, Ranjan; Groß, Petra; Lienau, Christoph; Vadai, Michal; Solomon, Michelle L.; Barton, David R., III; Lawrence, Mark; Dionne, Jennifer A.; Boriskina, Svetlana V.; Esteban, Ruben; Aizpurua, Javier; Zhang, Xiang; Yang, Sui; Wang, Danqing; Wang, Weijia; Odom, Teri W.; Accanto, Nicolò; de Roque, Pablo M.; Hancu, Ion M.; Piatkowski, Lukasz; van Hulst, Niek F.; Kling, Matthias F.

2018-04-01

Plasmonics is a rapidly developing field at the boundary of physical optics and condensed matter physics. It studies phenomena induced by and associated with surface plasmons—elementary polar excitations bound to surfaces and interfaces of good nanostructured metals. This Roadmap is written collectively by prominent researchers in the field of plasmonics. It encompasses selected aspects of nanoplasmonics. Among them are fundamental aspects, such as quantum plasmonics based on the quantum-mechanical properties of both the underlying materials and the plasmons themselves (such as their quantum generator, spaser), plasmonics in novel materials, ultrafast (attosecond) nanoplasmonics, etc. Selected applications of nanoplasmonics are also reflected in this Roadmap, in particular, plasmonic waveguiding, practical applications of plasmonics enabled by novel materials, thermo-plasmonics, plasmonic-induced photochemistry and photo-catalysis. This Roadmap is a concise but authoritative overview of modern plasmonics. It will be of interest to a wide audience of both fundamental physicists and chemists, as well as applied scientists and engineers.

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors

NASA Astrophysics Data System (ADS)

Wolde, Seyoum; Lao, Yan-Feng; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S.

2017-06-01

We report experimental results showing how the noise in a Quantum-Dot Infrared photodetector (QDIP) and Quantum Dot-in-a-well (DWELL) varies with the electric field and temperature. At lower temperatures (below ˜100 K), the noise current of both types of detectors is dominated by generation-recombination (G-R) noise which is consistent with a mechanism of fluctuations driven by the electric field and thermal noise. The noise gain, capture probability, and carrier life time for bound-to-continuum or quasi-bound transitions in DWELL and QDIP structures are discussed. The capture probability of DWELL is found to be more than two times higher than the corresponding QDIP. Based on the analysis, structural parameters such as the numbers of active layers, the surface density of QDs, and the carrier capture or relaxation rate, type of material, and electric field are some of the optimization parameters identified to improve the gain of devices.

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-08-18

We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resultedmore » from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.« less

Holonomic surface codes for fault-tolerant quantum computation

NASA Astrophysics Data System (ADS)

Zhang, Jiang; Devitt, Simon J.; You, J. Q.; Nori, Franco

2018-02-01

Surface codes can protect quantum information stored in qubits from local errors as long as the per-operation error rate is below a certain threshold. Here we propose holonomic surface codes by harnessing the quantum holonomy of the system. In our scheme, the holonomic gates are built via auxiliary qubits rather than the auxiliary levels in multilevel systems used in conventional holonomic quantum computation. The key advantage of our approach is that the auxiliary qubits are in their ground state before and after each gate operation, so they are not involved in the operation cycles of surface codes. This provides an advantageous way to implement surface codes for fault-tolerant quantum computation.

Surface-hopping dynamics and decoherence with quantum equilibrium structure.

PubMed

Grunwald, Robbie; Kim, Hyojoon; Kapral, Raymond

2008-04-28

In open quantum systems, decoherence occurs through interaction of a quantum subsystem with its environment. The computation of expectation values requires a knowledge of the quantum dynamics of operators and sampling from initial states of the density matrix describing the subsystem and bath. We consider situations where the quantum evolution can be approximated by quantum-classical Liouville dynamics and examine the circumstances under which the evolution can be reduced to surface-hopping dynamics, where the evolution consists of trajectory segments exclusively evolving on single adiabatic surfaces, with probabilistic hops between these surfaces. The justification for the reduction depends on the validity of a Markovian approximation on a bath averaged memory kernel that accounts for quantum coherence in the system. We show that such a reduction is often possible when initial sampling is from either the quantum or classical bath initial distributions. If the average is taken only over the quantum dispersion that broadens the classical distribution, then such a reduction is not always possible.

Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2√3 ×2√3 ) surface

NASA Astrophysics Data System (ADS)

Wang, L. L.; Ma, X. C.; Ning, Y. X.; Ji, S. H.; Fu, Y. S.; Jia, J. F.; Kelly, K. F.; Xue, Q. K.

2009-04-01

Surface structure of the Sn islands 5 ML high, prepared on Si(111)-(2√3 ×2√3 )-Sn substrate, is investigated by low temperature scanning tunneling microscopy/spectroscopy. Due to the elastic strain relaxation in the islands, the in-plane unit cell structure distorts and the apparent height of the surface atoms varies regularly to form an overall modulated strip structure. The quantum well states are observed to depend on the relative position within this structure, which implies the change of the surface chemical potential induced by the elastic strain relaxation as well.

Impact of Surface Functionalization on the Quantum Coherence of Nitrogen-Vacancy Centers in Nanodiamonds.

PubMed

Ryan, Robert G; Stacey, Alastair; O'Donnell, Kane M; Ohshima, Takeshi; Johnson, Brett C; Hollenberg, Lloyd C L; Mulvaney, Paul; Simpson, David A

2018-04-18

Nanoscale quantum probes such as the nitrogen-vacancy (NV) center in diamonds have demonstrated remarkable sensing capabilities over the past decade as control over fabrication and manipulation of these systems has evolved. The biocompatibility and rich surface chemistry of diamonds has added to the utility of these probes but, as the size of these nanoscale systems is reduced, the surface chemistry of diamond begins to impact the quantum properties of the NV center. In this work, we systematically study the effect of the diamond surface chemistry on the quantum coherence of the NV center in nanodiamonds (NDs) 50 nm in size. Our results show that a borane-reduced diamond surface can on average double the spin relaxation time of individual NV centers in nanodiamonds when compared to thermally oxidized surfaces. Using a combination of infrared and X-ray absorption spectroscopy techniques, we correlate the changes in quantum relaxation rates with the conversion of sp 2 carbon to C-O and C-H bonds on the diamond surface. These findings implicate double-bonded carbon species as a dominant source of spin noise for near surface NV centers. The link between the surface chemistry and quantum coherence indicates that through tailored engineering of the surface, the quantum properties and magnetic sensitivity of these nanoscale systems may approach that observed in bulk diamond.

Persistent Hall voltages across thin planar charged quantum rings on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Durganandini, P.

2015-03-01

We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.

Circuit quantum acoustodynamics with surface acoustic waves.

PubMed

Manenti, Riccardo; Kockum, Anton F; Patterson, Andrew; Behrle, Tanja; Rahamim, Joseph; Tancredi, Giovanna; Nori, Franco; Leek, Peter J

2017-10-17

The experimental investigation of quantum devices incorporating mechanical resonators has opened up new frontiers in the study of quantum mechanics at a macroscopic level. It has recently been shown that surface acoustic waves (SAWs) can be piezoelectrically coupled to superconducting qubits, and confined in high-quality Fabry-Perot cavities in the quantum regime. Here we present measurements of a device in which a superconducting qubit is coupled to a SAW cavity, realising a surface acoustic version of cavity quantum electrodynamics. We use measurements of the AC Stark shift between the two systems to determine the coupling strength, which is in agreement with a theoretical model. This quantum acoustodynamics architecture may be used to develop new quantum acoustic devices in which quantum information is stored in trapped on-chip acoustic wavepackets, and manipulated in ways that are impossible with purely electromagnetic signals, due to the 10 5 times slower mechanical waves.In this work, Manenti et al. present measurements of a device in which a tuneable transmon qubit is piezoelectrically coupled to a surface acoustic wave cavity, realising circuit quantum acoustodynamic architecture. This may be used to develop new quantum acoustic devices.

Continuous multispectral imaging of surface phonon polaritons on silicon carbide with an external cavity quantum cascade laser

NASA Astrophysics Data System (ADS)

Dougakiuchi, Tatsuo; Kawada, Yoichi; Takebe, Gen

2018-03-01

We demonstrate the continuous multispectral imaging of surface phonon polaritons (SPhPs) on silicon carbide excited by an external cavity quantum cascade laser using scattering-type scanning near-field optical microscopy. The launched SPhPs were well characterized via the confirmation that the theoretical dispersion relation and measured in-plane wave vectors are in excellent agreement in the entire measurement range. The proposed scheme, which can excite and observe SPhPs with an arbitrary wavelength that effectively covers the spectral gap of CO2 lasers, is expected to be applicable for studies of near-field optics and for various applications based on SPhPs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamashita, G.; Nagai, M., E-mail: mnagai@mp.es.osaka-u.ac.jp, E-mail: ashida@mp.es.osaka-u.ac.jp; Ashida, M., E-mail: mnagai@mp.es.osaka-u.ac.jp, E-mail: ashida@mp.es.osaka-u.ac.jp

We estimated the carrier multiplication efficiency in the most common solar-cell material, Si, by using optical-pump/terahertz-probe spectroscopy. Through close analysis of time-resolved data, we extracted the exact number of photoexcited carriers from the sheet carrier density 10 ps after photoexcitation, excluding the influences of spatial diffusion and surface recombination in the time domain. For incident photon energies greater than 4.0 eV, we observed enhanced internal quantum efficiency due to carrier multiplication. The evaluated value of internal quantum efficiency agrees well with the results of photocurrent measurements. This optical method allows us to estimate the carrier multiplication and surface recombination of carriersmore » quantitatively, which are crucial for the design of the solar cells.« less

Strong coupling between surface plasmon polariton and laser dye rhodamine 800

NASA Astrophysics Data System (ADS)

Valmorra, Federico; Bröll, Markus; Schwaiger, Stephan; Welzel, Nadine; Heitmann, Detlef; Mendach, Stefan

2011-08-01

We report on strong coupling between surface plasmon polaritons on a thin silver film and laser dye Rhodamine 800. Attenuated total reflection measurements reveal that the pure surface plasmon polaritons interact with the Rhodamine 800 absorption lines exhibiting pronounced anticrossings in the dispersion relation. We show that the corresponding energy gap can be tailored by the concentration of dye molecules in the dielectric matrix between 50 meV and 70 meV. We can well model our data by a classical transfer matrix approach as well as by a quantum mechanical coupled oscillator ansatz.

Analysis of ice-binding sites in fish type II antifreeze protein by quantum mechanics.

PubMed

Cheng, Yuhua; Yang, Zuoyin; Tan, Hongwei; Liu, Ruozhuang; Chen, Guangju; Jia, Zongchao

2002-10-01

Many organisms living in cold environments can survive subzero temperatures by producing antifreeze proteins (AFPs) or antifreeze glycoproteins. In this paper we investigate the ice-binding surface of type II AFP by quantum mechanical methods, which, to the best of our knowledge, represents the first time that molecular orbital computational approaches have been applied to AFPs. Molecular mechanical approaches, including molecular docking, energy minimization, and molecular dynamics simulation, were used to obtain optimal systems for subsequent quantum mechanical analysis. We selected 17 surface patches covering the entire surface of the type II AFP and evaluated the interaction energy between each of these patches and two different ice planes using semi-empirical quantum mechanical methods. We have demonstrated the weak orbital overlay phenomenon and the change of bond orders in ice. These results consistently indicate that a surface patch containing 19 residues (K37, L38, Y20, E22, Y21, I19, L57, T56, F53, M127, T128, F129, R17, C7, N6, P5, G10, Q1, and W11) is the most favorable ice-binding site for both a regular ice plane and an ice plane where water O atoms are randomly positioned. Furthermore, for the first time the computation results provide new insights into the weakening of the ice lattice upon AFP binding, which may well be a primary factor leading to AFP-induced ice growth inhibition.

Analysis of ice-binding sites in fish type II antifreeze protein by quantum mechanics.

PubMed Central

Cheng, Yuhua; Yang, Zuoyin; Tan, Hongwei; Liu, Ruozhuang; Chen, Guangju; Jia, Zongchao

2002-01-01

Many organisms living in cold environments can survive subzero temperatures by producing antifreeze proteins (AFPs) or antifreeze glycoproteins. In this paper we investigate the ice-binding surface of type II AFP by quantum mechanical methods, which, to the best of our knowledge, represents the first time that molecular orbital computational approaches have been applied to AFPs. Molecular mechanical approaches, including molecular docking, energy minimization, and molecular dynamics simulation, were used to obtain optimal systems for subsequent quantum mechanical analysis. We selected 17 surface patches covering the entire surface of the type II AFP and evaluated the interaction energy between each of these patches and two different ice planes using semi-empirical quantum mechanical methods. We have demonstrated the weak orbital overlay phenomenon and the change of bond orders in ice. These results consistently indicate that a surface patch containing 19 residues (K37, L38, Y20, E22, Y21, I19, L57, T56, F53, M127, T128, F129, R17, C7, N6, P5, G10, Q1, and W11) is the most favorable ice-binding site for both a regular ice plane and an ice plane where water O atoms are randomly positioned. Furthermore, for the first time the computation results provide new insights into the weakening of the ice lattice upon AFP binding, which may well be a primary factor leading to AFP-induced ice growth inhibition. PMID:12324437

Quantum ballistic transport in strained epitaxial germanium

NASA Astrophysics Data System (ADS)

Gul, Y.; Holmes, S. N.; Newton, P. J.; Ellis, D. J. P.; Morrison, C.; Pepper, M.; Barnes, C. H. W.; Myronov, M.

2017-12-01

Large scale fabrication using Complementary Metal Oxide Semiconductor compatible technology of semiconductor nanostructures that operate on the principles of quantum transport is an exciting possibility now due to the recent development of ultra-high mobility hole gases in epitaxial germanium grown on standard silicon substrates. We present here a ballistic transport study of patterned surface gates on strained Ge quantum wells with SiGe barriers, which confirms the quantum characteristics of the Ge heavy hole valence band structure in 1-dimension. Quantised conductance at multiples of 2e2/h is a universal feature of hole transport in Ge up to 10 × (2e2/h). The behaviour of ballistic plateaus with finite source-drain bias and applied magnetic field is elucidated. In addition, a reordering of the ground state is observed.

AC transport in p-Ge/GeSi quantum well in high magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.

2014-08-20

The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shownmore » that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.« less

Photophysical properties of blue – emitting silicon nanoparticles

PubMed Central

Portolés, Manuel J. Llansola; Nieto, Felipe Rodriguez; Soria, Delia B.; Amalvy, Javier I.; Peruzzo, Pablo J.; Mártire, Daniel O.; Kotler, Mónica; Holub, Oliver; Gonzalez, Mónica C.

2012-01-01

Silicon nanoparticles with strong blue photoluminescence were synthesized by electrochemical etching of silicon wafers and ultrasonically removed under N2 atmosphere in organic solvents to produce colloids. Thermal treatment leads to the formation of colloidal Si particles of 3 ± 1 nm diameter, which upon excitation with 340 – 380 nm light exhibited room temperature luminescence in the range from 400 to 500 nm. The emission and the one- and two-photon excitation spectra of the particles are not sensitive to surface functionalization with methyl 2-methylprop-2-enoate. However, the derivatized particles show higher emission quantum yields in air-saturated suspensions (44%) than the underivatized particles (27%), as well as higher stability of its dispersions. FTIR and XPS spectra indicate a significant surface oxidation of the particles. The Si:O:C ratio at the surface of the derivatized particles estimated from XPS is Si3O6(C5O2Hy)1, with y = 7 - 8. Vibronic spacing is observed in both the emission and excitation spectra. The information obtained from one-photon excitation experiments (emission and excitation spectra, photoluminescence quantum yields, luminescence decay lifetimes and anisotropy correlation lifetimes), as well as from two-photon excitation fluorescence correlation spectroscopy (brightness and diffusion coefficients) and TEM indicate that the blue-emitting particles are monodisperse and ball-shaped. Particle size clearly determines the emission and excitation spectral region, as expected from quantum confinement, but the presence and extent of Si-O species on the silicon networks seem crucial for determining the spectrum features and intensity of emission. The nanoparticles could hold great potential as quantum dots for applications as luminescence sensors in biology and environmental science. PMID:22866180

Statistical projection effects in a hydrodynamic pilot-wave system

NASA Astrophysics Data System (ADS)

Sáenz, Pedro J.; Cristea-Platon, Tudor; Bush, John W. M.

2018-03-01

Millimetric liquid droplets can walk across the surface of a vibrating fluid bath, self-propelled through a resonant interaction with their own guiding or `pilot' wave fields. These walking droplets, or `walkers', exhibit several features previously thought to be peculiar to the microscopic, quantum realm. In particular, walkers confined to circular corrals manifest a wave-like statistical behaviour reminiscent of that of electrons in quantum corrals. Here we demonstrate that localized topological inhomogeneities in an elliptical corral may lead to resonant projection effects in the walker's statistics similar to those reported in quantum corrals. Specifically, we show that a submerged circular well may drive the walker to excite specific eigenmodes in the bath that result in drastic changes in the particle's statistical behaviour. The well tends to attract the walker, leading to a local peak in the walker's position histogram. By placing the well at one of the foci, a mode with maxima near the foci is preferentially excited, leading to a projection effect in the walker's position histogram towards the empty focus, an effect strongly reminiscent of the quantum mirage. Finally, we demonstrate that the mean pilot-wave field has the same form as the histogram describing the walker's statistics.

Effect of Coulomb interaction on chemical potential of metal film

NASA Astrophysics Data System (ADS)

Kostrobij, P. P.; Markovych, B. M.

2018-07-01

The chemical potential of a metal film within the jellium model taking into account the Coulomb interaction between electrons is calculated. The surface potential is modelled as the infinite rectangular potential well. The behaviour of the chemical potential as a function of the film thickness is studied, the quantum size effect for this quantity is analysed. It is shown that taking into account the Coulomb interaction leads to a significant decrease of the chemical potential and to an enhancement of the quantum size effect.

Path-integral simulation of solids.

PubMed

Herrero, C P; Ramírez, R

2014-06-11

The path-integral formulation of the statistical mechanics of quantum many-body systems is described, with the purpose of introducing practical techniques for the simulation of solids. Monte Carlo and molecular dynamics methods for distinguishable quantum particles are presented, with particular attention to the isothermal-isobaric ensemble. Applications of these computational techniques to different types of solids are reviewed, including noble-gas solids (helium and heavier elements), group-IV materials (diamond and elemental semiconductors), and molecular solids (with emphasis on hydrogen and ice). Structural, vibrational, and thermodynamic properties of these materials are discussed. Applications also include point defects in solids (structure and diffusion), as well as nuclear quantum effects in solid surfaces and adsorbates. Different phenomena are discussed, as solid-to-solid and orientational phase transitions, rates of quantum processes, classical-to-quantum crossover, and various finite-temperature anharmonic effects (thermal expansion, isotopic effects, electron-phonon interactions). Nuclear quantum effects are most remarkable in the presence of light atoms, so that especial emphasis is laid on solids containing hydrogen as a constituent element or as an impurity.

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Momentum Distribution as a Fingerprint of Quantum Delocalization in Enzymatic Reactions: Open-Chain Path-Integral Simulations of Model Systems and the Hydride Transfer in Dihydrofolate Reductase.

PubMed

Engel, Hamutal; Doron, Dvir; Kohen, Amnon; Major, Dan Thomas

2012-04-10

The inclusion of nuclear quantum effects such as zero-point energy and tunneling is of great importance in studying condensed phase chemical reactions involving the transfer of protons, hydrogen atoms, and hydride ions. In the current work, we derive an efficient quantum simulation approach for the computation of the momentum distribution in condensed phase chemical reactions. The method is based on a quantum-classical approach wherein quantum and classical simulations are performed separately. The classical simulations use standard sampling techniques, whereas the quantum simulations employ an open polymer chain path integral formulation which is computed using an efficient Monte Carlo staging algorithm. The approach is validated by applying it to a one-dimensional harmonic oscillator and symmetric double-well potential. Subsequently, the method is applied to the dihydrofolate reductase (DHFR) catalyzed reduction of 7,8-dihydrofolate by nicotinamide adenine dinucleotide phosphate hydride (NADPH) to yield S-5,6,7,8-tetrahydrofolate and NADP(+). The key chemical step in the catalytic cycle of DHFR involves a stereospecific hydride transfer. In order to estimate the amount of quantum delocalization, we compute the position and momentum distributions for the transferring hydride ion in the reactant state (RS) and transition state (TS) using a recently developed hybrid semiempirical quantum mechanics-molecular mechanics potential energy surface. Additionally, we examine the effect of compression of the donor-acceptor distance (DAD) in the TS on the momentum distribution. The present results suggest differential quantum delocalization in the RS and TS, as well as reduced tunneling upon DAD compression.

Influence of Surface Roughness on Strong Light-Matter Interaction of a Quantum Emitter-Metallic Nanoparticle System.

PubMed

Lu, Yu-Wei; Li, Ling-Yan; Liu, Jing-Feng

2018-05-08

We investigate the quantum optical properties of strong light-matter interaction between a quantum emitter and a metallic nanoparticle beyond idealized structures with a smooth surface. Based on the local coupling strength and macroscopic Green's function, we derived an exact quantum optics approach to obtain the field enhancement and light-emission spectrum of a quantum emitter. Numerical simulations show that the surface roughness has a greater effect on the near-field than on the far-field, and slightly increases the vacuum Rabi splitting on average. Further, we verified that the near-field enhancement is mainly determined by the surface features of hot-spot area.

Perspective: Ring-polymer instanton theory

NASA Astrophysics Data System (ADS)

Richardson, Jeremy O.

2018-05-01

Since the earliest explorations of quantum mechanics, it has been a topic of great interest that quantum tunneling allows particles to penetrate classically insurmountable barriers. Instanton theory provides a simple description of these processes in terms of dominant tunneling pathways. Using a ring-polymer discretization, an efficient computational method is obtained for applying this theory to compute reaction rates and tunneling splittings in molecular systems. Unlike other quantum-dynamics approaches, the method scales well with the number of degrees of freedom, and for many polyatomic systems, the method may provide the most accurate predictions which can be practically computed. Instanton theory thus has the capability to produce useful data for many fields of low-temperature chemistry including spectroscopy, atmospheric and astrochemistry, as well as surface science. There is however still room for improvement in the efficiency of the numerical algorithms, and new theories are under development for describing tunneling in nonadiabatic transitions.

Tunable localized surface plasmon resonances in one-dimensional h-BN/graphene/h-BN quantum-well structure

NASA Astrophysics Data System (ADS)

Kaibiao, Zhang; Hong, Zhang; Xinlu, Cheng

2016-03-01

The graphene/hexagonal boron-nitride (h-BN) hybrid structure has emerged to extend the performance of graphene-based devices. Here, we investigate the tunable plasmon in one-dimensional h-BN/graphene/h-BN quantum-well structures. The analysis of optical response and field enhancement demonstrates that these systems exhibit a distinct quantum confinement effect for the collective oscillations. The intensity and frequency of the plasmon can be controlled by the barrier width and electrical doping. Moreover, the electron doping and the hole doping lead to very different results due to the asymmetric energy band. This graphene/h-BN hybrid structure may pave the way for future optoelectronic devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 11474207 and 11374217) and the Scientific Research Fund of Sichuan University of Science and Engineering, China (Grant No. 2014PY07).

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Rafferty, Conor S.; Yu, Zhiping; Dutton, Robert W.; Ancona, Mario G.; Saini, Subhash (Technical Monitor)

1998-01-01

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

NASA Technical Reports Server (NTRS)

Hecht, Michael H.

1990-01-01

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Fermi surface in the absence of a Fermi liquid in the Kondo insulator SmB6

NASA Astrophysics Data System (ADS)

Hartstein, M.; Toews, W. H.; Hsu, Y.-T.; Zeng, B.; Chen, X.; Hatnean, M. Ciomaga; Zhang, Q. R.; Nakamura, S.; Padgett, A. S.; Rodway-Gant, G.; Berk, J.; Kingston, M. K.; Zhang, G. H.; Chan, M. K.; Yamashita, S.; Sakakibara, T.; Takano, Y.; Park, J.-H.; Balicas, L.; Harrison, N.; Shitsevalova, N.; Balakrishnan, G.; Lonzarich, G. G.; Hill, R. W.; Sutherland, M.; Sebastian, Suchitra E.

2018-02-01

The search for a Fermi surface in the absence of a conventional Fermi liquid has thus far yielded very few potential candidates. Among promising materials are spin-frustrated Mott insulators near the insulator-metal transition, where theory predicts a Fermi surface associated with neutral low-energy excitations. Here we reveal another route to experimentally realize a Fermi surface in the absence of a Fermi liquid by the experimental study of a Kondo insulator SmB6 positioned close to the insulator-metal transition. We present experimental signatures down to low temperatures (<<1 K) associated with a Fermi surface in the bulk, including a sizeable linear specific heat coefficient, and on the application of a finite magnetic field, bulk magnetic quantum oscillations, finite quantum oscillatory entropy, and substantial enhancement in thermal conductivity well below the charge gap energy scale. Thus, the weight of evidence indicates that despite an extreme instance of Fermi liquid breakdown in Kondo insulating SmB6, a Fermi surface arises from novel itinerant low-energy excitations that couple to magnetic fields, but not weak DC electric fields.

Kinetic isotope effects and how to describe them

PubMed Central

Karandashev, Konstantin; Xu, Zhen-Hao; Meuwly, Markus; Vaníček, Jiří; Richardson, Jeremy O.

2017-01-01

We review several methods for computing kinetic isotope effects in chemical reactions including semiclassical and quantum instanton theory. These methods describe both the quantization of vibrational modes as well as tunneling and are applied to the ⋅H + H2 and ⋅H + CH4 reactions. The absolute rate constants computed with the semiclassical instanton method both using on-the-fly electronic structure calculations and fitted potential-energy surfaces are also compared directly with exact quantum dynamics results. The error inherent in the instanton approximation is found to be relatively small and similar in magnitude to that introduced by using fitted surfaces. The kinetic isotope effect computed by the quantum instanton is even more accurate, and although it is computationally more expensive, the efficiency can be improved by path-integral acceleration techniques. We also test a simple approach for designing potential-energy surfaces for the example of proton transfer in malonaldehyde. The tunneling splittings are computed, and although they are found to deviate from experimental results, the ratio of the splitting to that of an isotopically substituted form is in much better agreement. We discuss the strengths and limitations of the potential-energy surface and based on our findings suggest ways in which it can be improved. PMID:29282447

Validity of the site-averaging approximation for modeling the dissociative chemisorption of H{sub 2} on Cu(111) surface: A quantum dynamics study on two potential energy surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Tianhui; Fu, Bina, E-mail: bina@dicp.ac.cn, E-mail: zhangdh@dicp.ac.cn; Zhang, Dong H., E-mail: bina@dicp.ac.cn, E-mail: zhangdh@dicp.ac.cn

A new finding of the site-averaging approximation was recently reported on the dissociative chemisorption of the HCl/DCl+Au(111) surface reaction [T. Liu, B. Fu, and D. H. Zhang, J. Chem. Phys. 139, 184705 (2013); T. Liu, B. Fu, and D. H. Zhang, J. Chem. Phys. 140, 144701 (2014)]. Here, in order to investigate the dependence of new site-averaging approximation on the initial vibrational state of H{sub 2} as well as the PES for the dissociative chemisorption of H{sub 2} on Cu(111) surface at normal incidence, we carried out six-dimensional quantum dynamics calculations using the initial state-selected time-dependent wave packet approach, withmore » H{sub 2} initially in its ground vibrational state and the first vibrational excited state. The corresponding four-dimensional site-specific dissociation probabilities are also calculated with H{sub 2} fixed at bridge, center, and top sites. These calculations are all performed based on two different potential energy surfaces (PESs). It is found that the site-averaging dissociation probability over 15 fixed sites obtained from four-dimensional quantum dynamics calculations can accurately reproduce the six-dimensional dissociation probability for H{sub 2} (v = 0) and (v = 1) on the two PESs.« less

Superconducting quantum circuits at the surface code threshold for fault tolerance.

PubMed

Barends, R; Kelly, J; Megrant, A; Veitia, A; Sank, D; Jeffrey, E; White, T C; Mutus, J; Fowler, A G; Campbell, B; Chen, Y; Chen, Z; Chiaro, B; Dunsworth, A; Neill, C; O'Malley, P; Roushan, P; Vainsencher, A; Wenner, J; Korotkov, A N; Cleland, A N; Martinis, John M

2014-04-24

A quantum computer can solve hard problems, such as prime factoring, database searching and quantum simulation, at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection by distributing a logical state among many physical quantum bits (qubits) by means of quantum entanglement. Superconductivity is a useful phenomenon in this regard, because it allows the construction of large quantum circuits and is compatible with microfabrication. For superconducting qubits, the surface code approach to quantum computing is a natural choice for error correction, because it uses only nearest-neighbour coupling and rapidly cycled entangling gates. The gate fidelity requirements are modest: the per-step fidelity threshold is only about 99 per cent. Here we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92 per cent and a two-qubit gate fidelity of up to 99.4 per cent. This places Josephson quantum computing at the fault-tolerance threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

Real-Time Reciprocal Space Mapping of Nano-Islands Induced by Quantum Confinement

NASA Astrophysics Data System (ADS)

Hong, Hawoong; Gray, Aaron; Chiang, T.-C.

2011-01-01

The effects of quantum confinement have been observed pronouncedly in the island morphology of Pb thin films. The evolution of these nano-islands on Si (111)-(7 × 7) and sapphire (001) surfaces has been studied with a new X-ray diffraction method. A charge-coupled device (CCD) camera was used to collect two- and three-dimensional (2-D and 3-D, respectively) maps of the surface X-ray diffraction in real time. Large ranges of the reflectivity curves, with rocking curves at every point on the reflectivity curves, could be measured continuously in a relatively short amount of time. The abundance of information from 2-D k-space maps reveals clear changes in the growth modes of these thin Pb films. With the 3-D extension of this method, it was possible to observe the ordering of the islands. The islands maintain a nearly uniform interisland distance but lack any angular correlation. The interisland ordering is correlated well with the development of "magic" island heights caused by quantum confinement.

Frequency comb transferred by surface plasmon resonance

PubMed Central

Geng, Xiao Tao; Chun, Byung Jae; Seo, Ji Hoon; Seo, Kwanyong; Yoon, Hana; Kim, Dong-Eon; Kim, Young-Jin; Kim, Seungchul

2016-01-01

Frequency combs, millions of narrow-linewidth optical modes referenced to an atomic clock, have shown remarkable potential in time/frequency metrology, atomic/molecular spectroscopy and precision LIDARs. Applications have extended to coherent nonlinear Raman spectroscopy of molecules and quantum metrology for entangled atomic qubits. Frequency combs will create novel possibilities in nano-photonics and plasmonics; however, its interrelation with surface plasmons is unexplored despite the important role that plasmonics plays in nonlinear spectroscopy and quantum optics through the manipulation of light on a subwavelength scale. Here, we demonstrate that a frequency comb can be transformed to a plasmonic comb in plasmonic nanostructures and reverted to the original frequency comb without noticeable degradation of <6.51 × 10−19 in absolute position, 2.92 × 10−19 in stability and 1 Hz in linewidth. The results indicate that the superior performance of a well-defined frequency comb can be applied to nanoplasmonic spectroscopy, quantum metrology and subwavelength photonic circuits. PMID:26898307

Small GSH-Capped CuInS2 Quantum Dots: MPA-Assisted Aqueous Phase Transfer and Bioimaging Applications.

PubMed

Zhao, Chuanzhen; Bai, Zelong; Liu, Xiangyou; Zhang, Yijia; Zou, Bingsuo; Zhong, Haizheng

2015-08-19

An efficient ligand exchange strategy for aqueous phase transfer of hydrophobic CuInS2/ZnS quantum dots was developed by employing glutathione (GSH) and mercaptopropionic acid (MPA) as the ligands. The whole process takes less than 20 min and can be scaled up to gram amount. The material characterizations show that the final aqueous soluble samples are solely capped with GSH on the surface. Importantly, these GSH-capped CuInS2/ZnS quantum dots have small size (hydrodynamic diameter <10 nm), moderate fluorescent properties (up to 34%) as well as high stability in aqueous solutions (stable for more than three months in 4 °C without any significant fluorescence quenching). Moreover, this ligand exchange strategy is also versatile for the aqueous phase transfer of other hydrophobic quantum dots, for instance, CuInSe2 and CdSe/ZnS quantum dots. We further demonstrated that GSH-capped quantum dots could be suitable fluorescence markers to penetrate cell membrane and image the cells. In addition, the GSH-capped CuInS2 quantum dots also have potential use in other fields such as photocatalysis and quantum dots sensitized solar cells.

Complex Teichmüller Space below the Planck Length for the Interpretation of Quantum Mechanics

NASA Astrophysics Data System (ADS)

Winterberg, Friedwardt

2014-03-01

As Newton's mysterious action at a distance law of gravity was explained as a Riemannian geometry by Einstein, it is proposed that the likewise mysterious non-local quantum mechanics is explained by the analytic continuation below the Planck length into a complex Teichmüller space. Newton's theory worked extremely well, as does quantum mechanics, but no satisfactory explanation has been given for quantum mechanics. In one space dimension, sufficient to explain the EPR paradox, the Teichmüller space is reduced to a space of complex Riemann surfaces. Einstein's curved space-time theory of gravity was confirmed by a tiny departure from Newton's theory in the motion of the planet Mercury, and an experiment is proposed to demonstrate the possible existence of a Teichmüller space below the Planck length.

Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jing, YouLiang; Li, ZhiFeng, E-mail: zfli@mail.sitp.ac.cn; Chen, PingPing

We report the dependence of the near-field optical modes in metal-insulator-metal quantum well infrared photodetector (MIM-QWIP) on the incident angles. Three optical modes are observed and attributed to the 2nd- and the 3rd-order surface plasmon polariton (SPP) modes and the localized surface polariton (LSP) mode. In addition to the observation of a responsivity enhancement of 14 times by the LSP mode, the varying pattern of the three modes against the incident angle are revealed, in which the LSP mode is fixed while the 2nd SPP mode splits into two branches and the 3rd SPP mode red-shifts. The detailed mechanisms aremore » analyzed and numerically simulated. The results fit the experiments very well, demonstrating the wavevector coupling effect between the incident light and the metal gratings on the SPP modes. Our work will pave the way to fully understanding the influence of incident angles on a detector’s response for applying the MIM-QWIP to focal plane arrays.« less

Generalization of multifractal theory within quantum calculus

NASA Astrophysics Data System (ADS)

Olemskoi, A.; Shuda, I.; Borisyuk, V.

2010-03-01

On the basis of the deformed series in quantum calculus, we generalize the partition function and the mass exponent of a multifractal, as well as the average of a random variable distributed over a self-similar set. For the partition function, such expansion is shown to be determined by binomial-type combinations of the Tsallis entropies related to manifold deformations, while the mass exponent expansion generalizes the known relation τq=Dq(q-1). We find the equation for the set of averages related to ordinary, escort, and generalized probabilities in terms of the deformed expansion as well. Multifractals related to the Cantor binomial set, exchange currency series, and porous-surface condensates are considered as examples.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chun-Han; Su, Chia-Ying; Chen, Chung-Hui

Further reduction of the efficiency droop effect and further enhancements of internal quantum efficiency (IQE) and output intensity of a surface plasmon coupled, blue-emitting light-emitting diode (LED) by inserting a dielectric interlayer (DI) of a lower refractive index between p-GaN and surface Ag nanoparticles are demonstrated. The insertion of a DI leads to a blue shift of the localized surface plasmon (LSP) resonance spectrum and increases the LSP coupling strength at the quantum well emitting wavelength in the blue range. With SiO{sub 2} as the DI, a thinner DI leads to a stronger LSP coupling effect, when compared with themore » case of a thicker DI. By using GaZnO, which is a dielectric in the optical range and a good conductor under direct-current operation, as the DI, the LSP coupling results in the highest IQE, highest LED output intensity, and weakest droop effect.« less

Surface-emitting terahertz quantum cascade lasers with continuous-wave power in the tens of milliwatt range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Gangyi, E-mail: gangyi.xu@mail.sitp.ac.cn; Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Li, Lianhe

2014-03-03

We demonstrate efficient surface-emitting terahertz frequency quantum cascade lasers with continuous wave output powers of 20–25 mW at 15 K and maximum operating temperatures of 80–85 K. The devices employ a resonant-phonon depopulation active region design with injector, and surface emission is realized using resonators based on graded photonic heterostructures (GPHs). GPHs can be regarded as energy wells for photons and have recently been implemented through grading the period of the photonic structure. In this paper, we show that it is possible to keep the period constant and grade instead the lateral metal coverage across the GPH. This strategy ensures spectrally single-mode operationmore » across the whole laser dynamic range and represents an additional degree of freedom in the design of confining potentials for photons.« less

Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

PubMed Central

Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

2014-01-01

We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

Hydrogen isotopic substitution of solid methylamine through atomic surface reactions at low temperatures: A potential contribution to the D/H ratio of methylamine in molecular clouds

NASA Astrophysics Data System (ADS)

Oba, Yasuhiro; Chigai, Takeshi; Osamura, Yoshihiro; Watanabe, Naoki; Kouchi, Akira

2014-01-01

We experimentally studied hydrogen (H)-deuterium (D) substitution reactions of solid methylamine (CH3NH2) under astrophysically relevant conditions. We also calculated the potential energy surface for the H-D substitution reactions of methylamine isotopologues using quantum chemical methods. Despite the relatively large energy barrier of more than 18 kJ mol-1, CH3NH2 reacted with D atoms to yield deuterated methylamines at 10 K, suggesting that the H-D substitution reaction proceeds through quantum tunneling. Deuterated methylamines reacted with H atoms as well. On the basis of present results, we propose that methylamine has potential for D enrichment through atomic surface reactions on interstellar grains at very low temperatures in molecular clouds. D enrichment would occur in particular in the methyl group of methylamine.

Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells

NASA Astrophysics Data System (ADS)

Tito, M. A.; Pusep, Yu A.

2018-01-01

Time-resolved magneto-photoluminescence was employed to study the magnetic field induced quantum phase transition separating two phases with different distributions of electrons over quantum wells in an aperiodic multiple quantum well, embedded in a wide AlGaAs parabolic quantum well. Intensities, broadenings and recombination times attributed to the photoluminescence lines emitted from individual quantum wells of the multiple quantum well structure were measured as a function of the magnetic field near the transition. The presented data manifest themselves to the magnetic field driven migration of the free electrons between the quantum wells of the studied multiple quantum well structure. The observed charge transfer was found to influence the screening of the multiple quantum well and disorder potentials. Evidence of the localization of the electrons in the peripheral quantum wells in strong magnetic field is presented.

Controllable growth of GeSi nanostructures by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ma, Yingjie; Zhou, Tong; Zhong, Zhenyang; Jiang, Zuimin

2018-06-01

We present an overview on the recent progress achieved on the controllable growth of diverse GeSi alloy nanostructures by molecular beam epitaxy. Prevailing theories for controlled growth of Ge nanostructures on patterned as well as inclined Si surfaces are outlined firstly, followed by reviews on the preferential growth of Ge nanoislands on patterned Si substrates, Ge nanowires and high density nanoislands grown on inclined Si surfaces, and the readily tunable Ge nanostructures on Si nanopillars. Ge nanostructures with controlled geometries, spatial distributions and densities, including two-dimensional ordered nanoislands, three-dimensional ordered quantum dot crystals, ordered nanorings, coupled quantum dot molecules, ordered nanowires and nanopillar alloys, are discussed in detail. A single Ge quantum dot-photonic crystal microcavity coupled optical emission device demonstration fabricated by using the preferentially grown Ge nanoisland technique is also introduced. Finally, we summarize the current technology status with a look at the future development trends and application challenges for controllable growth of Ge nanostructures. Project supports by the Natural Science Foundation of China (Nos. 61605232, 61674039) and the Open Research Project of State Key Laboratory of Surface Physics from Fudan University (Nos. KF2016_15s, KF2017_05).

Cavity Born-Oppenheimer Approximation for Correlated Electron-Nuclear-Photon Systems.

PubMed

Flick, Johannes; Appel, Heiko; Ruggenthaler, Michael; Rubio, Angel

2017-04-11

In this work, we illustrate the recently introduced concept of the cavity Born-Oppenheimer approximation [ Flick et al. PNAS 2017 , 10.1073/pnas.1615509114 ] for correlated electron-nuclear-photon problems in detail. We demonstrate how an expansion in terms of conditional electronic and photon-nuclear wave functions accurately describes eigenstates of strongly correlated light-matter systems. For a GaAs quantum ring model in resonance with a photon mode we highlight how the ground-state electronic potential-energy surface changes the usual harmonic potential of the free photon mode to a dressed mode with a double-well structure. This change is accompanied by a splitting of the electronic ground-state density. For a model where the photon mode is in resonance with a vibrational transition, we observe in the excited-state electronic potential-energy surface a splitting from a single minimum to a double minimum. Furthermore, for a time-dependent setup, we show how the dynamics in correlated light-matter systems can be understood in terms of population transfer between potential energy surfaces. This work at the interface of quantum chemistry and quantum optics paves the way for the full ab initio description of matter-photon systems.

Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

DTIC Science & Technology

2015-07-16

SECURITY CLASSIFICATION OF: The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 - 1.3 µm...2015 Approved for Public Release; Distribution Unlimited Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface...ABSTRACT Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report

Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature.

PubMed

Alam, Khan; Foley, Andrew; Smith, Arthur R

2015-03-11

In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

Resonances and thresholds in the Rydberg-level population of multiply charged ions at solid surfaces

NASA Astrophysics Data System (ADS)

Nedeljković, Lj. D.; Nedeljković, N. N.

1998-12-01

We present a theoretical study of resonances and thresholds, two specific features of Rydberg-state formation of multiply charged ions (Z=6, 7, and 8) escaping a solid surface at intermediate velocities (v~1 a.u.) in the normal emergence geometry. The resonances are recognized in pronounced maxima of the experimentally observed population curves of Ar VIII ions for resonant values of the principal quantum number n=nres=11 and for the angular momentum quantum numbers l=1 and 2. Absence of optical signals in detectors of beam-foil experiments for n>nthr of S VI and Cl VII ions (with l=0, 1, and 2) and Ar VIII for l=0 is interpreted as a threshold phenomenon. An interplay between resonance and threshold effects is established within the framework of quantum dynamics of the low angular momentum Rydberg-state formation, based on a generalization of Demkov-Ostrovskii's charge-exchange model. In the model proposed, the Ar VIII resonances appear as a consequence of electron tunneling in the very vicinity of the ion-surface potential barrier top and at some critical ion-surface distances Rc. The observed thresholds are explained by means of a decay mechanism of ionic Rydberg states formed dominantly above the Fermi level EF of a solid conduction band. The theoretically predicted resonant and threshold values, nres and nthr of the principal quantum number n, as well as the obtained population probabilities Pnl=Pnl(v,Z), are in sufficiently good agreement with all available experimental findings.

From quantum to classical interactions between a free electron and a surface

NASA Astrophysics Data System (ADS)

Beierle, Peter James

Quantum theory is often cited as being one of the most empirically validated theories in terms of its predictive power and precision. These attributes have led to numerous scientific discoveries and technological advancements. However, the precise relationship between quantum and classical physics remains obscure. The prevailing description is known as decoherence theory, where classical physics emerges from a more general quantum theory through environmental interaction. Sometimes referred to as the decoherence program, it does not solve the quantum measurement problem. We believe experiments performed between the microscopic and macroscopic world may help finish the program. The following considers a free electron that interacts with a surface (the environment), providing a controlled decoherence mechanism. There are non-decohering interactions to be examined and quantified before the weaker decohering effects are filtered out. In the first experiment, an electron beam passes over a surface that's illuminated by low-power laser light. This induces a surface charge redistribution causing the electron deflection. This phenomenon's parameters are investigated. This system can be well understood in terms of classical electrodynamics, and the technological applications of this electron beam switch are considered. Such phenomena may mask decoherence effects. A second experiment tests decoherence theory by introducing a nanofabricated diffraction grating before the surface. The electron undergoes diffraction through the grating, but as the electron passes over the surface it's predicted by various physical models that the electron will lose its wave interference property. Image charge based models, which predict a larger loss of contrast than what is observed, are falsified (despite experiencing an image charge force). A theoretical study demonstrates how a loss of contrast may not be due to the irreversible process decoherence, but dephasing (a reversible process due to randomization of the wavefunction's phase). To resolve this ambiguity, a correlation function on an ensemble of diffraction patterns is analyzed after an electron undergoes either process in a path integral calculation. The diffraction pattern is successfully recovered for dephasing, but not for decoherence, thus verifying it as a potential tool in experimental studies to determine the nature of the observed process.

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

NASA Technical Reports Server (NTRS)

Qiu, Yueming

2006-01-01

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Quantum anomalous Hall Majorana platform

NASA Astrophysics Data System (ADS)

Zeng, Yongxin; Lei, Chao; Chaudhary, Gaurav; MacDonald, Allan H.

2018-02-01

We show that quasi-one-dimensional quantum wires can be written onto the surface of magnetic topological insulator (MTI) thin films by gate arrays. When the MTI is in a quantum anomalous Hall state, MTI/superconductor quantum wires have especially broad stability regions for both topological and nontopological states, facilitating creation and manipulation of Majorana particles on the MTI surface.

Nano-patterned superconducting surface for high quantum efficiency cathode

DOEpatents

Hannon, Fay; Musumeci, Pietro

2017-03-07

A method for providing a superconducting surface on a laser-driven niobium cathode in order to increase the effective quantum efficiency. The enhanced surface increases the effective quantum efficiency by improving the laser absorption of the surface and enhancing the local electric field. The surface preparation method makes feasible the construction of superconducting radio frequency injectors with niobium as the photocathode. An array of nano-structures are provided on a flat surface of niobium. The nano-structures are dimensionally tailored to interact with a laser of specific wavelength to thereby increase the electron yield of the surface.

Nature of Molecular Interactions of Peptides with Gold, Palladium, and Pd-Au Bimetal Surfaces in Aqueous Solution

DTIC Science & Technology

2009-06-24

bimetallic surfaces also possess additional polarity, approximated by atomic charges of +0.3e and -0.3e at the Pd and Au sides of the interface , which...as well as polarization and charge transfer at the metal interface (only qualitatively considered here). A hexagonal spacing of ∼1.6 Å between...as results from quantum-mechanical calculations on small peptide and surface fragments. Interfaces were modeled using the consistent valence force

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

NASA Technical Reports Server (NTRS)

Hoenk, M. E.; Carver, A.; Jones, T.; Dickie, M.; Cheng, P.; Greer, H. F.; Nikzad, S.; Sgro, J.

2013-01-01

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

Using of Quantum Dots in Biology and Medicine.

PubMed

Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

2018-01-01

Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

Surface treatment of nanocrystal quantum dots after film deposition

DOEpatents

Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

2015-02-03

Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

Classical And Quantum Rainbow Scattering From Surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winter, H.; Schueller, A.; Busch, M.

2011-06-01

The structure of clean and adsorbate covered surfaces as well as of ultrathin films can be investigated by grazing scattering of fast atoms. We present two recent experimental techniques which allow one to study the structure of ordered arrangements of surface atoms in detail. (1) Rainbow scattering under axial surface channeling conditions, and (2) fast atom diffraction. Our examples demonstrate the attractive features of grazing fast atom scattering as a powerful analytical tool in studies on the structure of surfaces. We will concentrate our discussion on the structure of ultrathin silica films on a Mo(112) surface and of adsorbed oxygenmore » atoms on a Fe(110) surface.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sedlacek, J. A.; Kim, E.; Rittenhouse, S. T.

We investigate the (0001) surface of single crystal quartz with a submonolayer of Rb adsorbates. Using Rydberg atom electromagnetically induced transparency, we investigate the electric elds resulting from Rb adsorbed on the quartz surface, and measure the activation energy of the Rb adsorbates. We show that the Rb induces a negative electron affnity (NEA) on the quartz surface. The NEA surface allows for low energy electrons to bind to the surface and cancel the electric eld from the Rb adsorbates. Our results have implications for integrating Rydberg atoms into hybrid quantum systems and the fundamental study of atom-surface interactions, asmore » well as applications for electrons bound to a 2D surface.« less

Revealing topological Dirac fermions at the surface of strained HgTe thin films via quantum Hall transport spectroscopy

NASA Astrophysics Data System (ADS)

Thomas, C.; Crauste, O.; Haas, B.; Jouneau, P.-H.; Bäuerle, C.; Lévy, L. P.; Orignac, E.; Carpentier, D.; Ballet, P.; Meunier, T.

2017-12-01

We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides insights in the quantum Hall effect of topological insulator (TI) slabs, in the crossover regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore circuit functionalities in spintronics and quantum nanoelectronics.

Coherently-enabled environmental control of optics and energy transfer pathways of hybrid quantum dot-metallic nanoparticle systems.

PubMed

Hatef, Ali; Sadeghi, Seyed M; Fortin-Deschênes, Simon; Boulais, Etienne; Meunier, Michel

2013-03-11

It is well-known that optical properties of semiconductor quantum dots can be controlled using optical cavities or near fields of localized surface plasmon resonances (LSPRs) of metallic nanoparticles. In this paper we study the optics, energy transfer pathways, and exciton states of quantum dots when they are influenced by the near fields associated with plasmonic meta-resonances. Such resonances are formed via coherent coupling of excitons and LSPRs when the quantum dots are close to metallic nanorods and driven by a laser beam. Our results suggest an unprecedented sensitivity to the refractive index of the environment, causing significant spectral changes in the Förster resonance energy transfer from the quantum dots to the nanorods and in exciton transition energies. We demonstrate that when a quantum dot-metallic nanorod system is close to its plasmonic meta-resonance, we can adjust the refractive index to: (i) control the frequency range where the energy transfer from the quantum dot to the metallic nanorod is inhibited, (ii) manipulate the exciton transition energy shift of the quantum dot, and (iii) disengage the quantum dot from the metallic nanoparticle and laser field. Our results show that near meta-resonances the spectral forms of energy transfer and exciton energy shifts are strongly correlated to each other.

Size effects and charge transport in metals: Quantum theory of the resistivity of nanometric metallic structures arising from electron scattering by grain boundaries and by rough surfaces

NASA Astrophysics Data System (ADS)

Munoz, Raul C.; Arenas, Claudio

2017-03-01

We discuss recent progress regarding size effects and their incidence upon the coefficients describing charge transport (resistivity, magnetoresistance, and Hall effect) induced by electron scattering from disordered grain boundaries and from rough surfaces on metallic nanostructures; we review recent measurements of the magneto transport coefficients that elucidate the electron scattering mechanisms at work. We review as well theoretical developments regarding quantum transport theories that allow calculating the increase in resistivity induced by electron-rough surface scattering (in the absence of grain boundaries) from first principles—from the parameters that describe the surface roughness that can be measured with a Scanning Tunnelling Microscope (STM). We evaluate the predicting power of the quantum version of the Fuchs-Sondheimer theory and of the model proposed by Calecki, abandoning the method of parameter fitting used for decades, but comparing instead theoretical predictions with resistivity measured in thin films where surface roughness has also been measured with a STM, and where electron-grain boundary scattering can be neglected. We also review the theory of Mayadas and Shatzkes (MS) [Phys. Rev. B 1, 1382 (1970)] used for decades, and discuss its severe conceptual difficulties that arise out of the fact that: (i) MS employed plane waves to describe the electronic states within the metal sample having periodic grain boundaries, rather than the Bloch states known since the thirties to be the solutions of the Schrödinger equation describing electrons propagating through a Krönig-Penney [Proc. R. Soc. London Ser. A 130, 499 (1931)] periodic potential; (ii) MS ignored the fact that the wave functions describing electrons propagating through a 1-D disordered potential are expected to decay exponentially with increasing distance, a fact known since the work of Anderson [Phys. Rev. 109, 1492 (1958)] in 1958 for which he was awarded the Nobel Prize in 1977; (iii) The current in the sample should be proportional to TN, the probability that an electron traverses N consecutive (disordered) grains found along a mean free path; MS assumed that TN = 1. We review unpublished details of a quantum transport theory based upon a model of diffusive transport and Kubo's linear response formalism recently published [Arenas et al., Appl. Surf. Sci. 329, 184 (2015)], which permits estimating the increase in resistivity of a metallic specimen (over the bulk resistivity) under the combined effects of electron scattering by phonons, impurities, disordered grain boundaries, and rough surfaces limiting the sample. We evaluate the predicting power of both the MS theory and of the new quantum model on samples where the temperature dependence of the resistivity has been measured between 4 K and 300 K, and where surface roughness and grain size distribution has been measured on each sample via independent experiments. We find that the quantum theory does exhibit a predicting power, whereas the predicting power of the MS model as well as the significance and reliability of its fitting parameters seems questionable. We explore the power of the new theory by comparing, for the first time, the resistivity predicted and measured on nanometric Cu wires of (approximately) rectangular cross section employed in building integrated circuits, based upon a quantum description of electron motion.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, W.W.; Choquette, K.D.; Gourley, P.L.

1998-01-27

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof are disclosed. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n {>=} 2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n {>=} 2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum. 12 figs.

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, Weng W.; Choquette, Kent D.; Gourley, Paul L.

1998-01-01

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

Study on the high-power semi-insulating GaAs PCSS with quantum well structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Chongbiao; Wang, Bo; Huang, Yupeng

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity ofmore » the AlGaAs/GaAs PCSS was larger than 10{sup 6} shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.« less

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.

2018-04-01

The photodetection improvement previously observed in mid-infrared (IR) quantum dot photodetectors (QDIPs) coupled with periodic metal metasurfaces is usually attributed to the surface light trapping and confinement due to generation of surface plasmon waves (SPWs). In the present work, a Ge/Si QDIP integrated with a metal plasmonic structure is fabricated to experimentally measure the photoresponse enhancement and verify that this enhancement is caused by the excitation of the mid-IR surface plasmons. A 50 nm-thick gold film perforated with a 1.2 μm-period two-dimensional square array of subwavelength holes is employed as a plasmonic coupler to convert the incident electromagnetic IR radiation into SPWs. Measurements of the polarization and angular dependencies of the photoresponse allow us to determine the dispersion of plasmon modes. We find that experimental dispersion relations agree well with that derived from a computer simulation for fundamental plasmon resonance, which indicates that the photodetection improvement in the mid-IR spectral region is actually caused by the excitations of surface plasmon Bloch waves.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartstein, M.; Toews, W. H.; Hsu, Y. -T.

The search for a Fermi surface in the absence of a conventional Fermi liquid has thus far yielded very few potential candidates. Among promising materials are spin-frustrated Mott insulators near the insulator–metal transition, where theory predicts a Fermi surface associated with neutral low-energy excitations. In this paper, we reveal another route to experimentally realize a Fermi surface in the absence of a Fermi liquid by the experimental study of a Kondo insulator SmB 6 positioned close to the insulator–metal transition. We present experimental signatures down to low temperatures (<<1 K) associated with a Fermi surface in the bulk, including amore » sizeable linear specific heat coefficient, and on the application of a finite magnetic field, bulk magnetic quantum oscillations, finite quantum oscillatory entropy, and substantial enhancement in thermal conductivity well below the charge gap energy scale. Finally, the weight of evidence indicates that despite an extreme instance of Fermi liquid breakdown in Kondo insulating SmB 6, a Fermi surface arises from novel itinerant low-energy excitations that couple to magnetic fields, but not weak DC electric fields.« less

Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication

NASA Astrophysics Data System (ADS)

Tansu, Nelson

The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions. The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail.

Magneto-thermoelectric effects in the two-dimensional electron gas of a HgTe quantum well due to THz laser heating by cyclotron resonance absorption

NASA Astrophysics Data System (ADS)

Pakmehr, Mehdi; Bruene, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; McCombe, Bruce

2015-03-01

HgTe quantum wells (QWs) have shown a number of interesting phenomena over the past 20 years, most recently the first two-dimensional topological insulating state. We have studied thermoelectric photovoltages of 2D electrons in a 6.1 nm wide HgTe quantum well induced by cyclotron resonance absorption (B = 2 - 5 T) of a focused THz laser beam. We have estimated thermo-power coefficients by detailed analysis of the beam profile at the sample surface and the photovoltage signals developed across various contacts of a large Hall bar structure at a bath temperature of 1.6 K. We obtain reasonable values of the magneto-thermopower coefficients. Work at UB was supported by NSF DMR 1008138 and the Office of the Provost, and at the University of Wuerzburg by DARPA MESO Contract N6601-11-1-4105, by DFG Grant HA5893/4-1 within SPP 1666 and the Leibnitz Program, and the EU ERC-AG Program (Project 3-TOP.

Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix

NASA Astrophysics Data System (ADS)

Hwang, E. S.; Che, S. B.; Saito, H.; Wang, X.; Ishitani, Y.; Yoshikawa, A.

2008-05-01

Spatially resolved luminescence properties of InN/GaN multiple quantum wells (MQWs) consisting of nominally one monolayer (1-ML)-thick InN QWs embedded in a GaN matrix are studied by cross-sectional and plan-view cathodoluminescence measurements. First it is confirmed that the dominant emission peaks observed at around 390 nm to 430 nm in the MQWs samples are attributed to the effects of inserting ˜1-ML-thick InN wells in the GaN matrix, resulting in efficient localization of GaN excitons at InN QWs. Furthermore, it is revealed that the detailed structure of the MQWs, such as the thickness distribution and interface sharpness, is very sensitive to the presence of surface defects such as hillocks around screw-component threading dislocations, resulting in different emission wavelengths/energies. This is because the epitaxy process for depositing such thin InN wells is seriously affected by the atomic-level surface structures/properties of the growth front. It will be concluded that it is necessary to use lower dislocation density GaN bulk templates to obtain much higher structural quality InN/GaN MQWs good enough for characterizing their optical properties.

Synthesis of SnS nanoparticles by SILAR method for quantum dot-sensitized solar cells.

PubMed

Tsukigase, Hiroki; Suzuki, Yoshikazu; Berger, Marie-Hélène; Sagawa, Takashi; Yoshikawa, Susumu

2011-03-01

SnS-sensitized TiO2 electrodes were applied in quantum dot-sensitized solar cells (QDSSCs) which are environmentally more favorable than conventional Cd or Pb-chalcogenide-sensitized electrodes. SnS nanoparticles were well-distributed over the surface of TiO2 nanoparticles by the successive ionic layer adsorption and reaction (SILAR) method. Deposited SnS nanoparticles had diameter about 3 nm. Under AM1.5 irradiation with 100 mW/cm2 light intensity (at 1 sun), the energy conversion efficiency of obtained cells reached a value of 0.21% (0.25 cm2) at SILAR coating cycles of 5. In addition, the photovoltaic performance was improved by additional ZnS coating on the surface of SnS-sensitized TiO2 electrodes.

Quantum beating patterns observed in the energetics of Pb film nanostructures.

PubMed

Czoschke, P; Hong, Hawoong; Basile, L; Chiang, T-C

2004-07-16

We have studied the nanoscale structural evolution of Pb films grown at 110 K on a Si(111) substrate as they are annealed to increasingly higher temperatures. Surface x-ray diffraction from a synchrotron source is used to observe the morphology evolve from an initial smooth film through various metastable states before reaching a state of local equilibrium, at which point the coverage of different height Pb structures is analyzed and related to the thickness-dependent surface energy. Rich patterns are seen in the resulting energy landscape similar to the beating patterns heard from the interference of two musical notes of similar pitch. The explanation is, however, very simple, as demonstrated by a model calculation based on the confinement of free electrons to a quantum well.

Quantum Beating Patterns Observed in the Energetics of Pb Film Nanostructures

NASA Astrophysics Data System (ADS)

Czoschke, P.; Hong, Hawoong; Basile, L.; Chiang, T.-C.

2004-07-01

We have studied the nanoscale structural evolution of Pb films grown at 110K on a Si(111) substrate as they are annealed to increasingly higher temperatures. Surface x-ray diffraction from a synchrotron source is used to observe the morphology evolve from an initial smooth film through various metastable states before reaching a state of local equilibrium, at which point the coverage of different height Pb structures is analyzed and related to the thickness-dependent surface energy. Rich patterns are seen in the resulting energy landscape similar to the beating patterns heard from the interference of two musical notes of similar pitch. The explanation is, however, very simple, as demonstrated by a model calculation based on the confinement of free electrons to a quantum well.

Progress and issues for high-speed vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lear, Kevin L.; Al-Omari, Ahmad N.

2007-02-01

Extrinsic electrical, thermal, and optical issues rather than intrinsic factors currently constrain the maximum bandwidth of directly modulated vertical cavity surface emitting lasers (VCSELs). Intrinsic limits based on resonance frequency, damping, and K-factor analysis are summarized. Previous reports are used to compare parasitic circuit values and electrical 3dB bandwidths and thermal resistances. A correlation between multimode operation and junction heating with bandwidth saturation is presented. The extrinsic factors motivate modified bottom-emitting structures with no electrical pads, small mesas, copper plated heatsinks, and uniform current injection. Selected results on high speed quantum well and quantum dot VCSELs at 850 nm, 980 nm, and 1070 nm are reviewed including small-signal 3dB frequencies up to 21.5 GHz and bit rates up to 30 Gb/s.

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingsheng, E-mail: xsxu@semi.ac.cn

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreasedmore » with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.« less

Quantum Hall Valley Nematics: From Field Theories to Microscopic Models

NASA Astrophysics Data System (ADS)

Parameswaran, Siddharth

The interplay between quantum Hall ordering and spontaneously broken ``internal'' symmetries in two-dimensional electron systems with spin or pseudospin degrees of freedom gives rise to a variety of interesting phenomena, including novel phases, phase transitions, and topological excitations. I will discuss a theory of broken-symmetry quantum Hall states, applicable to a class of multivalley systems, where the symmetry at issue is a point-group element that combines a spatial rotation with a permutation of valley indices. I will explore its ramifications for the phase diagram of a variety of experimental systems, such as AlAs and Si quantum wells and the surface states of bismuth. I will also discuss unconventional transport phenomena in these phases in the presence of quenched randomness, and the possible mechanisms of selection between degenerate broken-symmetry phases in clean systems. I acknowledge support from NSF DMR-1455366.

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

NASA Technical Reports Server (NTRS)

Leon, R.; Marcinkevicius, S.; Siegert, J.; Magness, B.; Taylor, W.; Lobo, C.

2002-01-01

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2017-02-01

GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.

Quantum vs Classical Mechanics for a 'Simple' Dissociation Reaction. Should They Give the Same Results?

NASA Astrophysics Data System (ADS)

Holloway, Stephen

1997-03-01

When performing molecular dynamical simulations on light systems at low energies, there is always the risk of producing data that bear no similarity to experiment. Indeed, John Barker himself was particularly anxious about treating Ar scattering from surfaces using classical mechanics where it had been shown experimentally in his own lab that diffraction occurs. In such cases, the correct procedure is probably to play the trump card "... well of course, quantum effects will modify this so that....." and retire gracefully. For our particular interests, the tables are turned in that we are interested in gas-surface dynamical studies for highly quantized systems, but would be interested to know when it is possible to use classical mechanics in order that a greater dimensionality might be treated. For molecular dissociation and scattering, it has been oft quoted that the greater the number of degrees of freedom, the more appropriate is classical mechanics, primarily because of the mass averaging over the quantized dimensions. Is this true? We have been investigating the dissociation of hydrogen molecules at surfaces and in this talk I will present quantum results for dissociation and scattering, along with a novel method for their interpretation based upon adiabatic potential energy surfaces. Comparison with classical calculations will be made and conclusions drawn. a novel method for their interpretation based upon adiabatic potential energy surfaces

Enhanced Fluorescence Properties of Carbon Dots in Polymer Films

PubMed Central

Liu, Yamin; Wang, Ping; Shiral Fernando, K. A.; LeCroy, Gregory E.; Maimaiti, Halidan; Harruff-Miller, Barbara A.; Lewis, William K.; Bunker, Christopher E.; Hou, Zhi-Ling; Sun, Ya-Ping

2016-01-01

Carbon dots of small carbon nanoparticles surface-functionalized with 2,2′-(ethylenedioxy)bis(ethylamine) (EDA) were synthesized, and the as-synthesized sample was separated on an aqueous gel column to obtain fractions of the EDA-carbon dots with different fluorescence quantum yields. As already discussed in the literature, the variations in fluorescence performance among the fractions were attributed to the different levels and/or effectiveness of the surface functionalization-passivation in the carbon dots. These fractions, as well as carbon nanoparticles without any deliberate surface functionalization, were dispersed into poly(vinyl alcohol) (PVA) for composite films. In the PVA film matrix, the carbon dots and nanoparticles exhibited much enhanced fluorescence emissions in comparison with their corresponding aqueous solutions. The increased fluorescence quantum yields in the films were determined quantitatively by using a specifically designed and constructed film sample holder in the emission spectrometer. The observed fluorescence decays of the EDA-carbon dots in film and in solution were essentially the same, suggesting that the significant enhancement in fluorescence quantum yields from solution to film is static in nature. Mechanistic implications of the results, including a rationalization in terms of the compression effect on the surface passivation layer (similar to a soft corona) in carbon dots when embedded in the more restrictive film environment resulting in more favorable radiative recombinations of the carbon particle surface-trapped electrons and holes, and also potential technological applications of the brightly fluorescent composite films are highlighted and discussed. PMID:28133537

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface.

PubMed

Kolmer, Marek; Zuzak, Rafal; Dridi, Ghassen; Godlewski, Szymon; Joachim, Christian; Szymonski, Marek

2015-08-07

The design and construction of the first prototypical QHC (Quantum Hamiltonian Computing) atomic scale Boolean logic gate is reported using scanning tunnelling microscope (STM) tip-induced atom manipulation on an Si(001):H surface. The NOR/OR gate truth table was confirmed by dI/dU STS (Scanning Tunnelling Spectroscopy) tracking how the surface states of the QHC quantum circuit on the Si(001):H surface are shifted according to the input logical status.

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860-980°C of p-GaN

NASA Astrophysics Data System (ADS)

Romanov, I. S.; Prudaev, I. A.; Brudnyi, V. N.

2018-05-01

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10-17, 2.8·10-16, and 1.2·10-15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.

Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Kurai, Satoshi; Imura, Nobuto; Jin, Li; Miyake, Hideto; Hiramatsu, Kazumasa; Yamada, Yoichi

2018-06-01

We investigated the spatial distribution of luminescence near threading dislocations in AlGaN/AlGaN multiple quantum wells (MQWs) by cathodoluminescence mapping. Emission at the higher-energy side of the AlGaN MQW peak was locally observed near the threading dislocations, which were not accompanied by any surface V-pits. Such higher-energy emission was not observed in the AlGaN epilayers. The energy difference between the AlGaN MQW peak and the higher-energy emission peak increased with increasing barrier-layer Al composition. These results suggest that the origin of the higher-energy emission is likely local thickness fluctuation around dislocations in very thin AlGaN MQWs.

Fermi surface in the absence of a Fermi liquid in the Kondo insulator SmB 6

DOE PAGES

Hartstein, M.; Toews, W. H.; Hsu, Y. -T.; ...

2017-10-23

The search for a Fermi surface in the absence of a conventional Fermi liquid has thus far yielded very few potential candidates. Among promising materials are spin-frustrated Mott insulators near the insulator–metal transition, where theory predicts a Fermi surface associated with neutral low-energy excitations. In this paper, we reveal another route to experimentally realize a Fermi surface in the absence of a Fermi liquid by the experimental study of a Kondo insulator SmB 6 positioned close to the insulator–metal transition. We present experimental signatures down to low temperatures (<<1 K) associated with a Fermi surface in the bulk, including amore » sizeable linear specific heat coefficient, and on the application of a finite magnetic field, bulk magnetic quantum oscillations, finite quantum oscillatory entropy, and substantial enhancement in thermal conductivity well below the charge gap energy scale. Finally, the weight of evidence indicates that despite an extreme instance of Fermi liquid breakdown in Kondo insulating SmB 6, a Fermi surface arises from novel itinerant low-energy excitations that couple to magnetic fields, but not weak DC electric fields.« less

Evidence for a spinon Fermi surface in a triangular-lattice quantum-spin-liquid candidate

DOE PAGES

Shen, Yao; Li, Yao-Dong; Wo, Hongliang; ...

2016-12-05

A quantum spin liquid is an exotic quantum state of matter in which spins are highly entangled and remain disordered down to zero temperature. Such a state of matter is potentially relevant to high-temperature superconductivity and quantum-information applications, and experimental identification of a quantum spin liquid state is of fundamental importance for our understanding of quantum matter. Theoretical studies have proposed various quantum-spin-liquid ground states, most of which are characterized by exotic spin excitations with fractional quantum numbers (termed ‘spinons’). In this paper, we report neutron scattering measurements of the triangular-lattice antiferromagnet YbMgGaO 4 that reveal broad spin excitations coveringmore » a wide region of the Brillouin zone. The observed diffusive spin excitation persists at the lowest measured energy and shows a clear upper excitation edge, consistent with the particle–hole excitation of a spinon Fermi surface. Finally, our results therefore point to the existence of a quantum spin liquid state with a spinon Fermi surface in YbMgGaO 4, which has a perfect spin-1/2 triangular lattice as in the original proposal of quantum spin liquids.« less

Evolution of Plasmonic Metamolecule Modes in the Quantum Tunneling Regime.

PubMed

Scholl, Jonathan A; Garcia-Etxarri, Aitzol; Aguirregabiria, Garikoitz; Esteban, Ruben; Narayan, Tarun C; Koh, Ai Leen; Aizpurua, Javier; Dionne, Jennifer A

2016-01-26

Plasmonic multinanoparticle systems exhibit collective electric and magnetic resonances that are fundamental for the development of state-of-the-art optical nanoantennas, metamaterials, and surface-enhanced spectroscopy substrates. While electric dipolar modes have been investigated in both the classical and quantum realm, little attention has been given to magnetic and other "dark" modes at the smallest dimensions. Here, we study the collective electric, magnetic, and dark modes of colloidally synthesized silver nanosphere trimers with varying interparticle separation using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). This technique enables direct visualization and spatially selective excitation of individual trimers, as well as manipulation of the interparticle distance into the subnanometer regime with the electron beam. Our experiments reveal that bonding electric and magnetic modes are significantly impacted by quantum effects, exhibiting a relative blueshift and reduced EELS amplitude compared to classical predictions. In contrast, the trimer's electric dark mode is not affected by quantum tunneling for even Ångström-scale interparticle separations. We employ a quantum-corrected model to simulate the effect of electron tunneling in the trimer which shows excellent agreement with experimental results. This understanding of classical and quantum-influenced hybridized modes may impact the development of future quantum plasmonic materials and devices, including Fano-like molecular sensors and quantum metamaterials.

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

NASA Astrophysics Data System (ADS)

Izumi, Shouichiro; Minami, Masaki; Kamada, Michiru; Tatsumi, Tetsuya; Yamaguchi, Atsushi A.; Ishikawa, Kenji; Hori, Masaru; Tomiya, Shigetaka

2013-08-01

Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (˜60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

Quantum Tunneling Affects Engine Performance.

PubMed

Som, Sibendu; Liu, Wei; Zhou, Dingyu D Y; Magnotti, Gina M; Sivaramakrishnan, Raghu; Longman, Douglas E; Skodje, Rex T; Davis, Michael J

2013-06-20

We study the role of individual reaction rates on engine performance, with an emphasis on the contribution of quantum tunneling. It is demonstrated that the effect of quantum tunneling corrections for the reaction HO2 + HO2 = H2O2 + O2 can have a noticeable impact on the performance of a high-fidelity model of a compression-ignition (e.g., diesel) engine, and that an accurate prediction of ignition delay time for the engine model requires an accurate estimation of the tunneling correction for this reaction. The three-dimensional model includes detailed descriptions of the chemistry of a surrogate for a biodiesel fuel, as well as all the features of the engine, such as the liquid fuel spray and turbulence. This study is part of a larger investigation of how the features of the dynamics and potential energy surfaces of key reactions, as well as their reaction rate uncertainties, affect engine performance, and results in these directions are also presented here.

Charge carrier localization effects on the quantum efficiency and operating temperature range of InAs{sub x}P{sub 1−x}/InP quantum well detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashisht, Geetanjali, E-mail: geetanjali@rrcat.gov.in; Dixit, V. K., E-mail: dixit@rrcat.gov.in; Porwal, S.

2016-03-07

The effect of charge carrier localization resulting in “S-shaped” temperature dependence of the photoluminescence peak energy of InAs{sub x}P{sub 1−x}/InP quantum wells (QWs) is distinctly revealed by the temperature dependent surface photo voltage (SPV) and photoconductivity (PC) processes. It is observed that the escape efficiency of carriers from QWs depends on the localization energy, where the carriers are unable to contribute in SPV/PC signal below a critical temperature. Below the critical temperature, carriers are strongly trapped in the localized states and are therefore unable to escape from the QW. Further, the critical temperature increases with the magnitude of localization energymore » of carriers. Carrier localization thus plays a pivotal role in defining the operating temperature range of InAs{sub x}P{sub 1−x}/InP QW detectors.« less

Quantum dynamics of the Eley-Rideal hydrogen formation reaction on graphite at typical interstellar cloud conditions.

PubMed

Casolo, Simone; Martinazzo, Rocco; Bonfanti, Matteo; Tantardini, Gian Franco

2009-12-31

Eley-Rideal formation of hydrogen molecules on graphite, as well as competing collision induced processes, are investigated quantum dynamically at typical interstellar cloud conditions, focusing in particular on gas-phase temperatures below 100 K, where much of the chemistry of the so-called diffuse clouds takes place on the surface of bare carbonaceous dust grains. Collisions of gas-phase hydrogen atoms with both chemisorbed and physisorbed species are considered using available potential energy surfaces (Sha et al., J. Chem. Phys.2002 116, 7158), and state-to-state, energy-resolved cross sections are computed for a number of initial vibrational states of the hydrogen atoms bound to the surface. Results show that (i) product molecules are internally hot in both cases, with vibrational distributions sharply peaked around few (one or two) vibrational levels, and (ii) cross sections for chemisorbed species are 2-3x smaller than those for physisorbed ones. In particular, we find that H(2) formation cross sections out of chemically bound species decrease steadily when the temperature drops below approximately 1000 K, and this is likely due to a quantum reflection phenomenon. This suggests that such Eley-Rideal reaction is all but efficient in the relevant gas-phase temperature range, even when gas-phase H atoms happen to chemisorb barrierless to the surface as observed, e.g., for forming so-called para dimers. Comparison with results from classical trajectory calculations highlights the need of a quantum description of the dynamics in the astrophysically relevant energy range, whereas preliminary results of an extensive first-principles investigation of the reaction energetics reveal the importance of the adopted substrate model.

Cobalt-doped ZnO nanocrystals: quantum confinement and surface effects from ab initio methods.

PubMed

Schoenhalz, Aline L; Dalpian, Gustavo M

2013-10-14

Cobalt-doped ZnO nanocrystals were studied through ab initio methods based on the Density Functional Theory. Both quantum confinement and surface effects were explicitly taken into account. When only quantum confinement effects are considered, Co atoms interact through a superexchange mechanism, stabilizing an antiferromagnetic ground state. Usually, this is the case for high quality nanoparticles with perfect surface saturation. When the surfaces were considered, a strong hybridization between the Co atoms and surfaces was observed, strongly changing their electronic and magnetic properties. Our results indicated that the surfaces might qualitatively change the properties of impurities in semiconductor nanocrystals.

Efficient and Adaptive Methods for Computing Accurate Potential Surfaces for Quantum Nuclear Effects: Applications to Hydrogen-Transfer Reactions.

PubMed

DeGregorio, Nicole; Iyengar, Srinivasan S

2018-01-09

We present two sampling measures to gauge critical regions of potential energy surfaces. These sampling measures employ (a) the instantaneous quantum wavepacket density, an approximation to the (b) potential surface, its (c) gradients, and (d) a Shannon information theory based expression that estimates the local entropy associated with the quantum wavepacket. These four criteria together enable a directed sampling of potential surfaces that appears to correctly describe the local oscillation frequencies, or the local Nyquist frequency, of a potential surface. The sampling functions are then utilized to derive a tessellation scheme that discretizes the multidimensional space to enable efficient sampling of potential surfaces. The sampled potential surface is then combined with four different interpolation procedures, namely, (a) local Hermite curve interpolation, (b) low-pass filtered Lagrange interpolation, (c) the monomial symmetrization approximation (MSA) developed by Bowman and co-workers, and (d) a modified Shepard algorithm. The sampling procedure and the fitting schemes are used to compute (a) potential surfaces in highly anharmonic hydrogen-bonded systems and (b) study hydrogen-transfer reactions in biogenic volatile organic compounds (isoprene) where the transferring hydrogen atom is found to demonstrate critical quantum nuclear effects. In the case of isoprene, the algorithm discussed here is used to derive multidimensional potential surfaces along a hydrogen-transfer reaction path to gauge the effect of quantum-nuclear degrees of freedom on the hydrogen-transfer process. Based on the decreased computational effort, facilitated by the optimal sampling of the potential surfaces through the use of sampling functions discussed here, and the accuracy of the associated potential surfaces, we believe the method will find great utility in the study of quantum nuclear dynamics problems, of which application to hydrogen-transfer reactions and hydrogen-bonded systems is demonstrated here.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru; Grigoryev, V. Yu.; Klyachkin, L. E.

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promotes the creation of composite bosons and fermions by the capture of single magnetic flux quanta at the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above, we present the first findings of the high temperature de Haas–van Alphenmore » (300 K) and quantum Hall (77 K) effects in the silicon sandwich structure that represents the ultranarrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of p-type Si-QW because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron–electron interaction.« less

Visualization of Current and Mapping of Elements in Quantum Dot Solar Cells

DOE PAGES

Niezgoda, J. Scott; Ng, Amy; Poplawsky, Jonathan D.; ...

2015-12-17

The delicate influence of properties such as high surface state density and organic-inorganic boundaries on the individual quantum dot electronic structure complicates pursuits toward forming quantitative models of quantum dot thin films ab initio. Our report describes the application of electron beam-induced current (EBIC) microscopy to depleted-heterojunction colloidal quantum dot photovoltaics (DH-CQD PVs), a technique which affords one a map of current production within the active layer of a PV device. The effects of QD sample size polydispersity as well as layer thickness in CQD active layers as they pertain to current production within these PVs are imaged and explained.more » The results from these experiments compare well with previous estimations, and confirm the ability of EBIC to function as a valuable empirical tool for the design and betterment of DH-CQD PVs. Lastly, extensive and unexpected PbS QD penetration into the mesoporous TiO 2 layer is observed through imaging of device cross sections by energy-dispersive X-ray spectroscopy combined with scanning transmission electron microscopy. Finally, the effects of this finding are discussed and corroborated with the EBIC studies on similar devices.« less

Correlated Errors in the Surface Code

NASA Astrophysics Data System (ADS)

Lopez, Daniel; Mucciolo, E. R.; Novais, E.

2012-02-01

A milestone step into the development of quantum information technology would be the ability to design and operate a reliable quantum memory. The greatest obstacle to create such a device has been decoherence due to the unavoidable interaction between the quantum system and its environment. Quantum Error Correction is therefore an essential ingredient to any quantum computing information device. A great deal of attention has been given to surface codes, since it has very good scaling properties. In this seminar, we discuss the time evolution of a qubit encoded in the logical basis of a surface code. The system is interacting with a bosonic environment at zero temperature. Our results show how much spatial and time correlations can be detrimental to the efficiency of the code.

Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

NASA Astrophysics Data System (ADS)

Huang, Chi-Hsien; Igarashi, Makoto; Woné, Michel; Uraoka, Yukiharu; Fuyuki, Takashi; Takeguchi, Masaki; Yamashita, Ichiro; Samukawa, Seiji

2009-04-01

A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.

Surface Acoustic Wave Study of Exciton Condensation in Bilayer Quantum Hall Systems

NASA Astrophysics Data System (ADS)

Pollanen, J.; Eisenstein, J. P.; Pfeiffer, L. N.; West, K. W.

In bilayer two-dimensional electron systems (2DES) in GaAs a strongly correlated many-electron state forms at low temperature and high magnetic field when the total electron density nT becomes equal to the degeneracy of a single spin split Landau level. This state corresponds to a total filling factor νT = 1 and can be described in terms of pseudospin ferromagnetism, or equivalently, Bose condensation of bilayer excitons. We have simultaneously measured magneto-transport and the propagation of pulsed surface acoustic waves (SAWs) at a frequency of 747 MHz to explore the phase transition between two independent layers at νT = 1 / 2 + 1 / 2 and the correlated state at νT = 1 in a high quality double quantum well device. We tune through this transition by varying the total electron density in our device with front and backside electrostatic gates. We acknowledge funding provided by the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center (NFS Grant PHY-1125565) with support of the Gordon and Betty Moore Foundation (GBMF-12500028).

Two-photon photoemission study of competing Auger and surface-mediated relaxation of hot electrons in CdSe quantum dot solids.

PubMed

Sippel, Philipp; Albrecht, Wiebke; Mitoraj, Dariusz; Eichberger, Rainer; Hannappel, Thomas; Vanmaekelbergh, Daniel

2013-04-10

Solids composed of colloidal quantum dots hold promise for third generation highly efficient thin-film photovoltaic cells. The presence of well-separated conduction electron states opens the possibility for an energy-selective collection of hot and equilibrated carriers, pushing the efficiency above the one-band gap limit. However, in order to reach this goal the decay of hot carriers within a band must be better understood and prevented, eventually. Here, we present a two-photon photoemission study of the 1Pe→1Se intraband relaxation dynamics in a CdSe quantum dot solid that mimics the active layer in a photovoltaic cell. We observe fast hot electron relaxation from the 1Pe to the 1Se state on a femtosecond-scale by Auger-type energy donation to the hole. However, if the oleic acid capping is exchanged for hexanedithiol capping, fast deep hole trapping competes efficiently with this relaxation pathway, blocking the Auger-type electron-hole energy exchange. A slower decay becomes then visible; we provide evidence that this is a multistep process involving the surface.

Imaging a multidimensional multichannel potential energy surface: Photodetachment of H(-)(NH3) and NH4 (.).

PubMed

Hu, Qichi; Song, Hongwei; Johnson, Christopher J; Li, Jun; Guo, Hua; Continetti, Robert E

2016-06-28

Probes of the Born-Oppenheimer potential energy surfaces governing polyatomic molecules often rely on spectroscopy for the bound regions or collision experiments in the continuum. A combined spectroscopic and half-collision approach to image nuclear dynamics in a multidimensional and multichannel system is reported here. The Rydberg radical NH4 and the double Rydberg anion NH4 (-) represent a polyatomic system for benchmarking electronic structure and nine-dimensional quantum dynamics calculations. Photodetachment of the H(-)(NH3) ion-dipole complex and the NH4 (-) DRA probes different regions on the neutral NH4 PES. Photoelectron energy and angular distributions at photon energies of 1.17, 1.60, and 2.33 eV compare well with quantum dynamics. Photoelectron-photofragment coincidence experiments indicate dissociation of the nascent NH4 Rydberg radical occurs to H + NH3 with a peak kinetic energy of 0.13 eV, showing the ground state of NH4 to be unstable, decaying by tunneling-induced dissociation on a time scale beyond the present scope of multidimensional quantum dynamics.

Fermi surface reconstruction and multiple quantum phase transitions in the antiferromagnet CeRhIn5

PubMed Central

Jiao, Lin; Chen, Ye; Kohama, Yoshimitsu; Graf, David; Bauer, E. D.; Singleton, John; Zhu, Jian-Xin; Weng, Zongfa; Pang, Guiming; Shang, Tian; Zhang, Jinglei; Lee, Han-Oh; Park, Tuson; Jaime, Marcelo; Thompson, J. D.; Steglich, Frank; Si, Qimiao; Yuan, H. Q.

2015-01-01

Conventional, thermally driven continuous phase transitions are described by universal critical behavior that is independent of the specific microscopic details of a material. However, many current studies focus on materials that exhibit quantum-driven continuous phase transitions (quantum critical points, or QCPs) at absolute zero temperature. The classification of such QCPs and the question of whether they show universal behavior remain open issues. Here we report measurements of heat capacity and de Haas–van Alphen (dHvA) oscillations at low temperatures across a field-induced antiferromagnetic QCP (Bc0 ≈ 50 T) in the heavy-fermion metal CeRhIn5. A sharp, magnetic-field-induced change in Fermi surface is detected both in the dHvA effect and Hall resistivity at B0* ≈ 30 T, well inside the antiferromagnetic phase. Comparisons with band-structure calculations and properties of isostructural CeCoIn5 suggest that the Fermi-surface change at B0* is associated with a localized-to-itinerant transition of the Ce-4f electrons in CeRhIn5. Taken in conjunction with pressure experiments, our results demonstrate that at least two distinct classes of QCP are observable in CeRhIn5, a significant step toward the derivation of a universal phase diagram for QCPs. PMID:25561536

Development and Application of Explicitly Correlated Wave Function Based Methods for the Investigation of Optical Properties of Semiconductor Nanomaterials

NASA Astrophysics Data System (ADS)

Elward, Jennifer Mary

Semiconductor nanoparticles, or quantum dots (QDs), are well known to have very unique optical and electronic properties. These properties can be controlled and tailored as a function of several influential factors, including but not limited to the particle size and shape, effect of composition and heterojunction as well as the effect of ligand on the particle surface. This customizable nature leads to extensive experimental and theoretical research on the capabilities of these quantum dots for many application purposes. However, in order to be able to understand and thus further the development of these materials, one must first understand the fundamental interaction within these nanoparticles. In this thesis, I have developed a theoretical method which is called electron-hole explicitly correlated Hartee-Fock (eh-XCHF). It is a variational method for solving the electron-hole Schrodinger equation and has been used in this work to study electron-hole interaction in semiconductor quantum dots. The method was benchmarked with respect to a parabolic quantum dot system, and ground state energy and electron-hole recombination probability were computed. Both of these properties were found to be in good agreement with expected results. Upon successful benchmarking, I have applied the eh-XCHF method to study optical properties of several quantum dot systems including the effect of dot size on exciton binding energy and recombination probability in a CdSe quantum dot, the effect of shape on a CdSe quantum dot, the effect of heterojunction on a CdSe/ZnS quantum dot and the effect of quantum dot-biomolecule interaction within a CdSe-firefly Luciferase protein conjugate system. As metrics for assessing the effect of these influencers on the electron-hole interaction, the exciton binding energy, electron-hole recombination probability and the average electron-hole separation distance have been computed. These excitonic properties have been found to be strongly infuenced by the changing composition of the particle. It has also been found through this work that the explicitly correlated method performs very well when computing these properties as it provides a feasible computational route to compare to both experimental and other theoretical results.

Electrochemical Study and Applications of Selective Electrodeposition of Silver on Quantum Dots.

PubMed

Martín-Yerga, Daniel; Rama, Estefanía Costa; Costa-García, Agustín

2016-04-05

In this work, selective electrodeposition of silver on quantum dots is described. The particular characteristics of the nanostructured silver thus obtained are studied by electrochemical and microscopic techniques. On one hand, quantum dots were found to catalyze the silver electrodeposition, and on the other hand, a strong adsorption between electrodeposited silver and quantum dots was observed, indicated by two silver stripping processes. Nucleation of silver nanoparticles followed different mechanisms depending on the surface (carbon or quantum dots). Voltammetric and confocal microscopy studies showed the great influence of electrodeposition time on surface coating, and high-resolution transmission electron microscopy (HRTEM) imaging confirmed the initial formation of Janus-like Ag@QD nanoparticles in this process. By use of moderate electrodeposition conditions such as 50 μM silver, -0.1 V, and 60 s, the silver was deposited only on quantum dots, allowing the generation of localized nanostructured electrode surfaces. This methodology can also be employed for sensing applications, showing a promising ultrasensitive electrochemical method for quantum dot detection.

Resonant Scattering of Surface Plasmon Polaritons by Dressed Quantum Dots

DTIC Science & Technology

2014-06-23

Resonant scattering of surface plasmon polaritons by dressed quantum dots Danhong Huang,1 Michelle Easter,2 Godfrey Gumbs,3 A. A. Maradudin,4 Shawn... polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In con- trast to...induced polarization field, treated as a source term9 arising from photo-excited electrons, allows for a resonant scattering of surface plasmon- polariton

Low-frequency surface waves on semi-bounded magnetized quantum plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moradi, Afshin, E-mail: a.moradi@kut.ac.ir

2016-08-15

The propagation of low-frequency electrostatic surface waves on the interface between a vacuum and an electron-ion quantum plasma is studied in the direction perpendicular to an external static magnetic field which is parallel to the interface. A new dispersion equation is derived by employing both the quantum magnetohydrodynamic and Poisson equations. It is shown that the dispersion equations for forward and backward-going surface waves are different from each other.

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al{sub x}Ga{sub 1–x}N multiple quantum wells grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chichibu, S. F., E-mail: chichibulab@yahoo.co.jp; Ishikawa, Y.; Furusawa, K.

2015-09-21

Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al{sub 0.68}Ga{sub 0.32}N/Al{sub 0.77}Ga{sub 0.23}N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H{sub 3}SiNH{sub 2} doping-reactant formation that gives rise to enhanced decomposition of NH{sub 3} and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration ofmore » NRCs composed of cation vacancies.« less

Orbital photogalvanic effects in quantum-confined structures

NASA Astrophysics Data System (ADS)

Karch, J.; Tarasenko, S. A.; Olbrich, P.; Schönberger, T.; Reitmaier, C.; Plohmann, D.; Kvon, Z. D.; Ganichev, S. D.

2010-09-01

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behaviour upon variation of the radiation polarization state, wavelength, gate voltage, and temperature is studied. We present the microscopic and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

Novel Gemini cationic surfactants as anti-corrosion for X-65 steel dissolution in oilfield produced water under sweet conditions: Combined experimental and computational investigations

NASA Astrophysics Data System (ADS)

Migahed, M. A.; elgendy, Amr.; EL-Rabiei, M. M.; Nady, H.; Zaki, E. G.

2018-05-01

Two new sequences of Gemini di-quaternary ammonium salts were synthesized characterized by FTIR and 1HNMR spectroscopic techniques and evaluated as corrosion inhibitor for X-65 steel dissolution in deep oil wells formation water saturated with CO2. The anti-corrosion performance of these compounds was studied by different electrochemical techniques i.e. (potentiodynamic polarization and AC impedance methods), Surface morphology (SEM and EDX) analysis and quantum chemical calculations. Results showed that the synthesized compounds were of mixed-type inhibitors and the inhibition capability was influenced by the inhibitor dose and the spacer substitution in their structure as indicated by Tafel plots. Surface active parameters were determined from the surface tension profile. The synthesized compounds adsorbed via Langmuir adsorption model with physiochemical adsorption as inferred from the standard free energy (ΔG°ads) values. Surface morphology (SEM and EDX) data for inhibitor (II) shows the development of adsorbed film on steel specimen. Finally, the experimental results were supported by the quantum chemical calculations using DFT theory.

2 + 1 dimensional de Sitter universe emerging from the gauge structure of a nonlinear quantum system.

PubMed

Kam, Chon-Fai; Liu, Ren-Bao

2017-08-29

Berry phases and gauge structures are fundamental quantum phenomena. In linear quantum mechanics the gauge field in parameter space presents monopole singularities where the energy levels become degenerate. In nonlinear quantum mechanics, which is an effective theory of interacting quantum systems, there can be phase transitions and hence critical surfaces in the parameter space. We find that these critical surfaces result in a new type of gauge field singularity, namely, a conic singularity that resembles the big bang of a 2 + 1 dimensional de Sitter universe, with the fundamental frequency of Bogoliubov excitations acting as the cosmic scale, and mode softening at the critical surface, where the fundamental frequency vanishes, causing a causal singularity. Such conic singularity may be observed in various systems such as Bose-Einstein condensates and molecular magnets. This finding offers a new approach to quantum simulation of fundamental physics.

Noise Threshold and Resource Cost of Fault-Tolerant Quantum Computing with Majorana Fermions in Hybrid Systems.

PubMed

Li, Ying

2016-09-16

Fault-tolerant quantum computing in systems composed of both Majorana fermions and topologically unprotected quantum systems, e.g., superconducting circuits or quantum dots, is studied in this Letter. Errors caused by topologically unprotected quantum systems need to be corrected with error-correction schemes, for instance, the surface code. We find that the error-correction performance of such a hybrid topological quantum computer is not superior to a normal quantum computer unless the topological charge of Majorana fermions is insusceptible to noise. If errors changing the topological charge are rare, the fault-tolerance threshold is much higher than the threshold of a normal quantum computer and a surface-code logical qubit could be encoded in only tens of topological qubits instead of about 1,000 normal qubits.

Plasmonic Antenna Coupling for QWIPs

NASA Technical Reports Server (NTRS)

Hong, John

2007-01-01

In a proposed scheme for coupling light into a quantum-well infrared photodetector (QWIP), an antenna or an array of antennas made of a suitable metal would be fabricated on the face of what would otherwise be a standard QWIP. This or any such coupling scheme is required to effect polarization conversion: Light incident perpendicularly to the face is necessarily polarized in the plane of the face, whereas, as a matter of fundamental electrodynamics and related quantum selection rules, light must have a non-zero component of perpendicular polarization in order to be absorbed in the photodetection process. In a prior coupling scheme, gratings in the form of surface corrugations diffract normally gles, thereby imparting some perpendicular polarization. Unfortunately, the corrugation- fabrication process increases the overall nonuniformity of a large QWIP array. The proposed scheme is an alternative to the use of surface corrugations.

Electronic field emission models beyond the Fowler-Nordheim one

NASA Astrophysics Data System (ADS)

Lepetit, Bruno

2017-12-01

We propose several quantum mechanical models to describe electronic field emission from first principles. These models allow us to correlate quantitatively the electronic emission current with the electrode surface details at the atomic scale. They all rely on electronic potential energy surfaces obtained from three dimensional density functional theory calculations. They differ by the various quantum mechanical methods (exact or perturbative, time dependent or time independent), which are used to describe tunneling through the electronic potential energy barrier. Comparison of these models between them and with the standard Fowler-Nordheim one in the context of one dimensional tunneling allows us to assess the impact on the accuracy of the computed current of the approximations made in each model. Among these methods, the time dependent perturbative one provides a well-balanced trade-off between accuracy and computational cost.

Quantum Control of a Nitrogen-Vacancy Center using Surface Acoustic Waves in the Resolved Sideband Limit

NASA Astrophysics Data System (ADS)

Golter, David; Oo, Thein; Amezcua, Maira; Wang, Hailin

Micro-electromechanical systems research is producing increasingly sophisticated tools for nanophononic applications. Such technology is well-suited for achieving chip-based, integrated acoustic control of solid-state quantum systems. We demonstrate such acoustic control in an important solid-state qubit, the diamond nitrogen-vacancy (NV) center. Using an interdigitated transducer to generate a surface acoustic wave (SAW) field in a bulk diamond, we observe phonon-assisted sidebands in the optical excitation spectrum of a single NV center. This exploits the strong strain sensitivity of the NV excited states. The mechanical frequencies far exceed the relevant optical linewidths, reaching the resolved-sideband regime. This enables us to use the SAW field for driving Rabi oscillations on the phonon-assisted optical transition. These results stimulate the further integration of SAW-based technologies with the NV center system.

Six-dimensional quantum dynamics study for the dissociative adsorption of HCl on Au(111) surface

NASA Astrophysics Data System (ADS)

Liu, Tianhui; Fu, Bina; Zhang, Dong H.

2013-11-01

The six-dimensional quantum dynamics calculations for the dissociative chemisorption of HCl on Au(111) are carried out using the time-dependent wave-packet approach, based on an accurate PES which was recently developed by neural network fitting to density functional theory energy points. The influence of vibrational excitation and rotational orientation of HCl on the reactivity is investigated by calculating the exact six-dimensional dissociation probabilities, as well as the four-dimensional fixed-site dissociation probabilities. The vibrational excitation of HCl enhances the reactivity and the helicopter orientation yields higher dissociation probability than the cartwheel orientation. A new interesting site-averaged effect is found for the title molecule-surface system that one can essentially reproduce the six-dimensional dissociation probability by averaging the four-dimensional dissociation probabilities over 25 fixed sites.

Atmospheric Chemistry of Neonicotinoids Used in Urban Areas

NASA Astrophysics Data System (ADS)

Finlayson-Pitts, B. J.; Aregahegn, K.; Shemesh, D.; Gerber, R. B.

2016-12-01

Neonicotinoid (NN) pesticides are used extensively in both urban and agricultural settings to control sucking pests such as aphids, as well as for flea control for domestic pets. As a result, they are commonly found on surfaces that are exposed to the atmosphere. Imidacloprid (IMD) is one of the major NNs in pest control formulations. While there have been a number of studies of IMD reactions in solution, there are relatively few surface reactions that are relevant to atmospheric exposures. We report here laboratory studies of the photochemistry of IMD on surfaces in which quantum yields are measured and combined with absorption cross sections to estimate tropospheric lifetimes with respect to photolysis. Products identified using a combination of ATR-FTIR, DART-MS and ESI-MS include the desnitro and urea derivatives in the solid, and N2O in the gas phase. Quantum chemical calculations suggest a mechanism for the photolysis and production of these products. The implications for altering toxicity through atmospheric reactions will be discussed.

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE PAGES

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; ...

2017-05-16

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

PubMed Central

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-01-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications. PMID:28508866

Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification

NASA Astrophysics Data System (ADS)

Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.

2017-05-01

Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.

Metal halide solid-state surface treatment for nanocrystal materials

DOEpatents

Luther, Joseph M.; Crisp, Ryan; Beard, Matthew C.

2016-04-26

Methods of treating nanocrystal and/or quantum dot devices are described. The methods include contacting the nanocrystals and/or quantum dots with a solution including metal ions and halogen ions, such that the solution displaces native ligands present on the surface of the nanocrystals and/or quantum dots via ligand exchange.

Stochastic analysis of surface roughness models in quantum wires

NASA Astrophysics Data System (ADS)

Nedjalkov, Mihail; Ellinghaus, Paul; Weinbub, Josef; Sadi, Toufik; Asenov, Asen; Dimov, Ivan; Selberherr, Siegfried

2018-07-01

We present a signed particle computational approach for the Wigner transport model and use it to analyze the electron state dynamics in quantum wires focusing on the effect of surface roughness. Usually surface roughness is considered as a scattering model, accounted for by the Fermi Golden Rule, which relies on approximations like statistical averaging and in the case of quantum wires incorporates quantum corrections based on the mode space approach. We provide a novel computational approach to enable physical analysis of these assumptions in terms of phase space and particles. Utilized is the signed particles model of Wigner evolution, which, besides providing a full quantum description of the electron dynamics, enables intuitive insights into the processes of tunneling, which govern the physical evolution. It is shown that the basic assumptions of the quantum-corrected scattering model correspond to the quantum behavior of the electron system. Of particular importance is the distribution of the density: Due to the quantum confinement, electrons are kept away from the walls, which is in contrast to the classical scattering model. Further quantum effects are retardation of the electron dynamics and quantum reflection. Far from equilibrium the assumption of homogeneous conditions along the wire breaks even in the case of ideal wire walls.

Theory of the reaction dynamics of small molecules on metal surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jackson, Bret

The objective of this project has been to develop realistic theoretical models for gas-surface interactions, with a focus on processes important in heterogeneous catalysis. The dissociative chemisorption of a molecule on a metal is a key step in many catalyzed reactions, and is often the rate-limiting step. We have explored the dissociative chemisorption of H 2, H 2O and CH 4 on a variety of metal surfaces. Most recently, our extensive studies of methane dissociation on Ni and Pt surfaces have fully elucidated its dependence on translational energy, vibrational state and surface temperature, providing the first accurate comparisons with experimentalmore » data. We have explored Eley-Rideal and hot atom reactions of H atoms with H- and C-covered metal surfaces. H atom interactions with graphite have also been explored, including both sticking and Eley-Rideal recombination processes. Again, our methods made it possible to explain several experiments studying these reactions. The sticking of atoms on metal surfaces has also been studied. To help elucidate the experiments that study these processes, we examine how the reaction dynamics depend upon the nature of the molecule-metal interaction, as well as experimental variables such as substrate temperature, beam energy, angle of impact, and the internal states of the molecules. Electronic structure methods based on Density Functional Theory are used to compute each molecule-metal potential energy surface. Both time-dependent quantum scattering techniques and quasi-classical methods are used to examine the reaction or scattering dynamics. Much of our effort has been directed towards developing improved quantum methods that can accurately describe reactions, as well as include the effects of substrate temperature (lattice vibration).« less

Comment on "Propagation of a TE surface mode in a relativistic electron beam-quantum plasma system" [Phys. Lett. A 376 (2012) 169

NASA Astrophysics Data System (ADS)

Moradi, Afshin

2016-07-01

In a recent paper Abdel Aziz [Phys. Lett. A 376 (2012) 169] obtained the dispersion properties of TE surface modes propagating at the interface between a magnetized quantum plasma and vacuum in the Faraday configuration, where these TE surface waves are excited during the interaction of relativistic electron beam with magnetized quantum plasma. The present Comment points out that in the Faraday configuration the surface waves acquire both TM and TE components due to the cyclotron motion of electrons. Therefore, the TE surface waves cannot propagate on surface of the present system and the general dispersion relations for surface waves, derived by Abdel Aziz are incorrect.

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

NASA Technical Reports Server (NTRS)

Hoenk, Michael

2011-01-01

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

Wave packet and statistical quantum calculations for the He + NeH⁺ → HeH⁺ + Ne reaction on the ground electronic state.

PubMed

Koner, Debasish; Barrios, Lizandra; González-Lezana, Tomás; Panda, Aditya N

2014-09-21

A real wave packet based time-dependent method and a statistical quantum method have been used to study the He + NeH(+) (v, j) reaction with the reactant in various ro-vibrational states, on a recently calculated ab initio ground state potential energy surface. Both the wave packet and statistical quantum calculations were carried out within the centrifugal sudden approximation as well as using the exact Hamiltonian. Quantum reaction probabilities exhibit dense oscillatory pattern for smaller total angular momentum values, which is a signature of resonances in a complex forming mechanism for the title reaction. Significant differences, found between exact and approximate quantum reaction cross sections, highlight the importance of inclusion of Coriolis coupling in the calculations. Statistical results are in fairly good agreement with the exact quantum results, for ground ro-vibrational states of the reactant. Vibrational excitation greatly enhances the reaction cross sections, whereas rotational excitation has relatively small effect on the reaction. The nature of the reaction cross section curves is dependent on the initial vibrational state of the reactant and is typical of a late barrier type potential energy profile.

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

2018-05-01

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkhomenko, Ya. A.; Dement’ev, P. A.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru

2016-07-15

The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface densitymore » is 3 × 10{sup 9} cm{sup –2}.« less

High intersubband absorption in long-wave quantum well infrared photodetector based on waveguide resonance

NASA Astrophysics Data System (ADS)

Zheng, Yuanliao; Chen, Pingping; Ding, Jiayi; Yang, Heming; Nie, Xiaofei; Zhou, Xiaohao; Chen, Xiaoshuang; Lu, Wei

2018-06-01

A hybrid structure consisting of periodic gold stripes and an overlaying gold film has been proposed as the optical coupler of a long-wave quantum well infrared photodetector. Absorption spectra and field distributions of the structure at back-side normal incidence are calculated by the finite difference time-domain method. The results indicate that the intersubband absorption can be greatly enhanced based on the waveguide resonance as well as the surface plasmon polariton (SPP) mode. With the optimized structural parameters of the periodic gold stripes, the maximal intersubband absorption can exceed 80%, which is much higher than the SPP-enhanced intersubband absorption (<50%) and about 6 times the one of the standard device. The relationship between the structural parameters and the waveguide resonant wavelength is derived. Other advantages of the efficient optical coupling based on waveguide resonance are also discussed.

Bioengineered-inorganic nanosystems for nanophotonics and bio-nanotechnology

NASA Astrophysics Data System (ADS)

Leong, Kirsty; Zin, Melvin T.; Ma, Hong; Huang, Fei; Sarikaya, Mehmet; Jen, Alex K.

2008-08-01

Here we nanoengineered tunable quantum dot and cationic conjugated polymer nanoarrays based on surface plasmon enhanced fluorescence where we achieved a 15-fold and 25-fold increase in their emission intensities, respectively. These peptide mediated hybrid systems were fabricated by horizontally tuning the localized surface plasmon resonance of gold nanoarrays and laterally tuning the distance of the fluorophore from the metal surface. This approach permits a comprehensive control both laterally (i.e., lithographically defined gold nanoarrays) and vertically (i.e., QD/CCP-metal distance) of the collectively behaving QD-NP and CP-NP assemblies by way of biomolecular recognition. The highest photoluminescence was achieved when the quantum dots and cationic conjugated polymers were self-assembled at a distance of 16.00 nm and 18.50 nm from the metal surface, respectively. Specifically, we demonstrated the spectral tuning of plasmon resonant metal nanoarrays and the self-assembly of protein-functionalized QDs/CCPs in a step-wise fashion with a concomitant incremental increase in separation from the metal surface through biotin-streptavidin spacer units. These well-controlled self-assembled patterned arrays provide highly organized architectures for improving optoelectronic devices and/or increasing the sensitivity of bio-chemical sensors.

Quantum dynamical simulation of the scattering of Ar from a frozen LiF(100) surface based on a first principles interaction potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azuri, Asaf; Pollak, Eli, E-mail: eli.pollak@weizmann.ac.il

2015-07-07

In-plane two and three dimensional diffraction patterns are computed for the vertical scattering of an Ar atom from a frozen LiF(100) surface. Suitable collimation of the incoming wavepacket serves to reveal the quantum mechanical diffraction. The interaction potential is based on a fit to an ab initio potential calculated using density functional theory with dispersion corrections. Due to the potential coupling found between the two horizontal surface directions, there are noticeable differences between the quantum angular distributions computed for two and three dimensional scattering. The quantum results are compared to analogous classical Wigner computations on the same surface and withmore » the same conditions. The classical dynamics largely provides the envelope for the quantum diffractive scattering. The classical results also show that the corrugation along the [110] direction of the surface is smaller than along the [100] direction, in qualitative agreement with experimental observations of unimodal and bimodal scattering for the [110] and [100] directions, respectively.« less

Substrate driven photochemistry of CdSe quantum dot films: charge injection and irreversible transformations on oxide surfaces.

PubMed

Tvrdy, Kevin; Kamat, Prashant V

2009-04-23

The photochemical behavior of CdSe quantum dots anchored to different surfaces was probed through their deposition on glass, SiO2, and TiO2 films. Following visible light irradiation under ambient conditions, CdSe quantum dots deposited on semiconducting TiO2 surface degraded, where no such degradation was observed when deposited on inert SiO2 surface or glass. Fluorescence decay and transient absorption experiments confirmed that charge injection from excited CdSe into TiO2 occurs with an apparent rate constant of 5.62 x 10(8) s(-1) and is the primary event responsible for photodegradation. In the presence of air, injected electrons are scavenged by surface adsorbed oxygen leaving behind reactive holes which induce anodic corrosion of CdSe quantum dots. In a vacuum environment, minimal CdSe degradation was observed as electron scavenging by oxygen is replaced with charge recombination between injected electrons and holes in CdSe nanocrystals. Spectroscopic measurements presented in this study highlight the role of both substrate and medium in dictating the photochemistry of CdSe quantum dots.

Multiple quantum phase transitions and superconductivity in Ce-based heavy fermions.

PubMed

Weng, Z F; Smidman, M; Jiao, L; Lu, Xin; Yuan, H Q

2016-09-01

Heavy fermions have served as prototype examples of strongly-correlated electron systems. The occurrence of unconventional superconductivity in close proximity to the electronic instabilities associated with various degrees of freedom points to an intricate relationship between superconductivity and other electronic states, which is unique but also shares some common features with high temperature superconductivity. The magnetic order in heavy fermion compounds can be continuously suppressed by tuning external parameters to a quantum critical point, and the role of quantum criticality in determining the properties of heavy fermion systems is an important unresolved issue. Here we review the recent progress of studies on Ce based heavy fermion superconductors, with an emphasis on the superconductivity emerging on the edge of magnetic and charge instabilities as well as the quantum phase transitions which occur by tuning different parameters, such as pressure, magnetic field and doping. We discuss systems where multiple quantum critical points occur and whether they can be classified in a unified manner, in particular in terms of the evolution of the Fermi surface topology.

Universality of modular symmetries in two-dimensional magnetotransport

NASA Astrophysics Data System (ADS)

Olsen, K. S.; Limseth, H. S.; Lütken, C. A.

2018-01-01

We analyze experimental quantum Hall data from a wide range of different materials, including semiconducting heterojunctions, thin films, surface layers, graphene, mercury telluride, bismuth antimonide, and black phosphorus. The fact that these materials have little in common, except that charge transport is effectively two-dimensional, shows how robust and universal the quantum Hall phenomenon is. The scaling and fixed point data we analyzed appear to show that magnetotransport in two dimensions is governed by a small number of universality classes that are classified by modular symmetries, which are infinite discrete symmetries not previously seen in nature. The Hall plateaux are (infrared) stable fixed points of the scaling-flow, and quantum critical points (where the wave function is delocalized) are unstable fixed points of scaling. Modular symmetries are so rigid that they in some cases fix the global geometry of the scaling flow, and therefore predict the exact location of quantum critical points, as well as the shape of flow lines anywhere in the phase diagram. We show that most available experimental quantum Hall scaling data are in good agreement with these predictions.

Theory of multiple quantum dot formation in strained-layer heteroepitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Lin; Maroudas, Dimitrios, E-mail: maroudas@ecs.umass.edu

2016-07-11

We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial filmmore » surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.« less

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

NASA Astrophysics Data System (ADS)

Romanov, I. S.; Prudaev, I. A.; Brudnyi, V. N.

2018-05-01

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10-17, 2.8·10-16, and 1.2·10-15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.

Strong localization induced anomalous temperature dependence exciton emission above 300 K from SnO{sub 2} quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, S. S., E-mail: sspan@issp.ac.cn, E-mail: ghli@issp.ac.cn; Li, F. D.; Liu, Q. W.

2015-05-07

SnO{sub 2} quantum dots (QDs) are potential materials for deep ultraviolet (DUV) light emitting devices. In this study, we report the temperature and excitation power-dependent exciton luminescence from SnO{sub 2} QDs. The exciton emission exhibits anomalous blue shift, accompanied with band width reduction with increasing temperature and excitation power above 300 K. The anomalous temperature dependences of the peak energy and band width are well interpreted by the strongly localized carrier thermal hopping process and Gaussian shape of band tails states, respectively. The localized wells and band tails at conduction minimum are considered to be induced by the surface oxygen defectsmore » and local potential fluctuation in SnO{sub 2} QDs.« less

Rayleigh surface wave interaction with the 2D exciton Bose-Einstein condensate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boev, M. V.; Kovalev, V. M., E-mail: vadimkovalev@isp.nsc.ru

We describe the interaction of a Rayleigh surface acoustic wave (SAW) traveling on the semiconductor substrate with the excitonic gas in a double quantum well located on the substrate surface. We study the SAW attenuation and its velocity renormalization due to the coupling to excitons. Both the deformation potential and piezoelectric mechanisms of the SAW-exciton interaction are considered. We focus on the frequency and excitonic density dependences of the SAW absorption coefficient and velocity renormalization at temperatures both above and well below the critical temperature of Bose-Einstein condensation of the excitonic gas. We demonstrate that the SAW attenuation and velocitymore » renormalization are strongly different below and above the critical temperature.« less

Surface segregation and the Al problem in GaAs quantum wells

NASA Astrophysics Data System (ADS)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Effective g factor of low-density two-dimensional holes in a Ge quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, T. M.; Harris, C. T.; Huang, S. -H.

Here we report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ~13 to ~28, are observed in the density range of 1.4×10 10 cm -2– 1.4×10 11 cm -2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization.more » In the latter orientation, a small effective g factor, ~1.3-1.4, is measured in the density range of 1.5×10 10 cm -2–2×10 10 cm -2. Finally, this very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.« less

Dynamics and Novel Mechanisms of SN2 Reactions on ab Initio Analytical Potential Energy Surfaces.

PubMed

Szabó, István; Czakó, Gábor

2017-11-30

We describe a novel theoretical approach to the bimolecular nucleophilic substitution (S N 2) reactions that is based on analytical potential energy surfaces (PESs) obtained by fitting a few tens of thousands high-level ab initio energy points. These PESs allow computing millions of quasi-classical trajectories thereby providing unprecedented statistical accuracy for S N 2 reactions, as well as performing high-dimensional quantum dynamics computations. We developed full-dimensional ab initio PESs for the F - + CH 3 Y [Y = F, Cl, I] systems, which describe the direct and indirect, complex-forming Walden-inversion, the frontside attack, and the new double-inversion pathways as well as the proton-transfer channels. Reaction dynamics simulations on the new PESs revealed (a) a novel double-inversion S N 2 mechanism, (b) frontside complex formation, (c) the dynamics of proton transfer, (d) vibrational and rotational mode specificity, (e) mode-specific product vibrational distributions, (f) agreement between classical and quantum dynamics, (g) good agreement with measured scattering angle and product internal energy distributions, and (h) significant leaving group effect in accord with experiments.

Molecular beam epitaxy of lead salt-based vertical cavity surface emitting lasers for the 4-6 μm spectral region

NASA Astrophysics Data System (ADS)

Springholz, G.; Schwarzl, T.; Heiß, W.; Aigle, M.; Pascher, H.

2001-07-01

IV-VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4-6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1- xEu xTe as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1- xEu xTe layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1- xEu xTe ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.

Effective g factor of low-density two-dimensional holes in a Ge quantum well

DOE PAGES

Lu, T. M.; Harris, C. T.; Huang, S. -H.; ...

2017-09-04

Here we report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ~13 to ~28, are observed in the density range of 1.4×10 10 cm -2– 1.4×10 11 cm -2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization.more » In the latter orientation, a small effective g factor, ~1.3-1.4, is measured in the density range of 1.5×10 10 cm -2–2×10 10 cm -2. Finally, this very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.« less

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Cathodoluminescence studies of chevron features in semi-polar (11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

NASA Astrophysics Data System (ADS)

Brasser, C.; Bruckbauer, J.; Gong, Y.; Jiu, L.; Bai, J.; Warzecha, M.; Edwards, P. R.; Wang, T.; Martin, R. W.

2018-05-01

Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices.

Development and application of InAsP/InP quantum well infrared detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geetanjali,, E-mail: geetanjali@rrcat.gov.in; Porwal, S.; Kumar, R.

2016-05-23

InAs{sub x}P{sub 1-x}/InP quantum wells grown using metal organic vapor phase epitaxy are investigated for infrared detector applications. The structural parameters of the QWs are evaluated from high resolution x-ray diffraction. The electronic transition energies measured from surface photo voltage and photoconductivity confirms that these QWs can be used for fabricating IR detectors in the wide wavelength range, i.e. 0.9–1.46 µm by inter-band transitions and 7–18 µm by inter-sub-band transitions. Subsequently the functionality of one such fabricated InAs{sub x}P{sub 1-x}/InPQW detector is verified by measuring the photoluminescence of suitable semiconductor quantum well structure. At the request of all authors of the paper,more » and with the agreement of the Proceedings Editor, an updated version of this article was published on 24 June 2016. The original version supplied to AIP Publishing contained an error in the Figures 1 and 2 where the right side of the images were cutoff. The error has been corrected in the updated and re-published article.« less

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.

2015-02-01

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18-600 nm) of p-type topological insulator Bi2Te3 thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18-100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi2Te3 quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi2Te3 and are inherent to topological insulators.

Hybrid nanostructures of well-organized arrays of colloidal quantum dots and a self-assembled monolayer of gold nanoparticles for enhanced fluorescence

NASA Astrophysics Data System (ADS)

Liu, Xiaoying; McBride, Sean P.; Jaeger, Heinrich M.; Nealey, Paul F.

2016-07-01

Hybrid nanomaterials comprised of well-organized arrays of colloidal semiconductor quantum dots (QDs) in close proximity to metal nanoparticles (NPs) represent an appealing system for high-performance, spectrum-tunable photon sources with controlled photoluminescence. Experimental realization of such materials requires well-defined QD arrays and precisely controlled QD-metal interspacing. This long-standing challenge is tackled through a strategy that synergistically combines lateral confinement and vertical stacking. Lithographically generated nanoscale patterns with tailored surface chemistry confine the QDs into well-organized arrays with high selectivity through chemical pattern directed assembly, while subsequent coating with a monolayer of close-packed Au NPs introduces the plasmonic component for fluorescence enhancement. The results show uniform fluorescence emission in large-area ordered arrays for the fabricated QD structures and demonstrate five-fold fluorescence amplification for red, yellow, and green QDs in the presence of the Au NP monolayer. Encapsulation of QDs with a silica shell is shown to extend the design space for reliable QD/metal coupling with stronger enhancement of 11 times through the tuning of QD-metal spatial separation. This approach provides new opportunities for designing hybrid nanomaterials with tailored array structures and multiple functionalities for applications such as multiplexed optical coding, color display, and quantum transduction.

Investigation of germanium quantum-well light sources.

PubMed

Fei, Edward T; Chen, Xiaochi; Zang, Kai; Huo, Yijie; Shambat, Gary; Miller, Gerald; Liu, Xi; Dutt, Raj; Kamins, Theodore I; Vuckovic, Jelena; Harris, James S

2015-08-24

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

Purification non-aqueous solution of quantum dots CdSe- CdS-ZnS from excess organic substance-stabilizer by use PE- HD membrane

NASA Astrophysics Data System (ADS)

Kosolapova, K.; Al-Alwani, A.; Gorbachev, I.; Glukhovskoy, E.

2015-11-01

Recently, a new simple method for the purification of CdSe-CdS-ZnS quantum dots by using membrane filtration, the filtration process, successfully separated the oleic acid from quantum dots through membranes purification after synthesis; purification of quantum dots is a very significant part of post synthetical treatment that determines the properties of the material. We explore the possibilities of the Langmuir-Blodgett technique to make such layers, using quantum dots as a model system. The Langmuir monolayer of quantum dots were then investigated the surface pressure-area isotherm. From isotherm, we found the surface pressure monolayer changed with time.

Functionalization of Cadmium Selenide Quantum Dots with Poly(ethylene glycol): Ligand Exchange, Surface Coverage, and Dispersion Stability.

PubMed

Wenger, Whitney Nowak; Bates, Frank S; Aydil, Eray S

2017-08-22

Semiconductor quantum dots synthesized using rapid mixing of precursors by injection into a hot solution of solvents and surfactants have surface ligands that sterically stabilize the dispersions in nonpolar solvents. Often, these ligands are exchanged to disperse the quantum dots in polar solvents, but quantitative studies of quantum dot surfaces before and after ligand exchange are scarce. We studied exchanging trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO) ligands on as-synthesized CdSe quantum dots dispersed in hexane with a 2000 g/mol thiolated poly(ethylene glycol) (PEG) polymer. Using infrared spectroscopy we quantify the absolute surface concentration of TOP/TOPO and PEG ligands per unit area before and after ligand exchange. While 50-85% of the TOP/TOPO ligands are removed upon ligand exchange, only a few are replaced with PEG. Surprisingly, the remaining TOP/TOPO ligands outnumber the PEG ligands, but these few PEG ligands are sufficient to disperse the quantum dots in polar solvents such as chloroform, tetrahydrofuran, and water. Moreover, as-synthesized quantum dots once easily dispersed in hexane are no longer dispersible in nonpolar solvents after ligand exchange. A subtle coverage-dependent balance between attractive PEG-solvent interactions and repulsive TOP/TOPO-solvent interactions determines the dispersion stability.

Quantum trajectories in elastic atom-surface scattering: threshold and selective adsorption resonances.

PubMed

Sanz, A S; Miret-Artés, S

2005-01-01

The elastic resonant scattering of He atoms off the Cu(117) surface is fully described with the formalism of quantum trajectories provided by Bohmian mechanics. Within this theory of quantum motion, the concept of trapping is widely studied and discussed. Classically, atoms undergo impulsive collisions with the surface, and then the trapped motion takes place covering at least two consecutive unit cells. However, from a Bohmian viewpoint, atom trajectories can smoothly adjust to the equipotential energy surface profile in a sort of sliding motion; thus the trapping process could eventually occur within one single unit cell. In particular, both threshold and selective adsorption resonances are explained by means of this quantum trapping considering different space and time scales. Furthermore, a mapping between each region of the (initial) incoming plane wave and the different parts of the diffraction and resonance patterns can be easily established, an important issue only provided by a quantum trajectory formalism. (c) 2005 American Institute of Physics.

Tuning Surface Energy Landscapes in Metallic Quantum Films using Alkali Adsorbates

NASA Astrophysics Data System (ADS)

Khajetoorians, Alexander; Qin, Shengyong; Zhu, Wenguang; Eisele, Holger; Zhang, Zhenyu; Shih, Chih-Kang

2008-03-01

Quantum confinement shows a strong interplay with growth and kinetics in thin metal systems where the Fermi wavelength has a special relationship to the surface normal lattice constant. In the case of Pb/Si(111) systems, this relationship reveals an interesting thickness-dependent bilayer oscillation in the density of states and surface energy up to a phase. In this paper, we report on a novel effect: tuning of the energy landscape of a flat-top quantum Pb mesa using Cs adsorbates. Using STM/STS, we show that depositing Cs adsorbates on a thin Pb mesa promotes quantum stable Pb nanoislands on preferentially unstable thicknesses. Thickness-dependent nanoisland densities show a strong bilayer oscillation correlating with quantum stability. By modifying the Cs coverage on the mesa surface, we can tune the lateral size distribution of the nanoislands and the overall amplitude of the island density oscillation. Nanoisland formation is linked to a step decoration of Cs adatoms along the step edge of the nanoisland.

Silicon Nanoparticles with Surface Nitrogen: 90% Quantum Yield with Narrow Luminescence Bandwidth and the Ligand Structure Based Energy Law.

PubMed

Li, Qi; Luo, Tian-Yi; Zhou, Meng; Abroshan, Hadi; Huang, Jingchun; Kim, Hyung J; Rosi, Nathaniel L; Shao, Zhengzhong; Jin, Rongchao

2016-09-27

Silicon nanoparticles (NPs) have been widely accepted as an alternative material for typical quantum dots and commercial organic dyes in light-emitting and bioimaging applications owing to silicon's intrinsic merits of least toxicity, low cost, and high abundance. However, to date, how to improve Si nanoparticle photoluminescence (PL) performance (such as ultrahigh quantum yield, sharp emission peak, high stability) is still a major issue. Herein, we report surface nitrogen-capped Si NPs with PL quantum yield up to 90% and narrow PL bandwidth (full width at half-maximum (fwhm) ≈ 40 nm), which can compete with commercial dyes and typical quantum dots. Comprehensive studies have been conducted to unveil the influence of particle size, structure, and amount of surface ligand on the PL of Si NPs. Especially, a general ligand-structure-based PL energy law for surface nitrogen-capped Si NPs is identified in both experimental and theoretical analyses, and the underlying PL mechanisms are further discussed.

Amplified all-optical polarization phase modulator assisted by a local surface plasmon in Au-hybrid CdSe quantum dots.

PubMed

Kyhm, Kwangseuk; Je, Koo-Chul; Taylor, Robert A

2012-08-27

We propose an amplified all-optical polarization phase modulator assisted by a local surface plasmon in Au-hybrid CdSe quantum dots. When the local surface plasmon of a spherical Au quantum dot is in resonance with the exciton energy level of a CdSe quantum dot, a significant enhancement of the linear and nonlinear refractive index is found in both the real and imaginary terms via the interaction with the dipole field of the local surface plasmon. Given a gating pulse intensity, an elliptical polarization induced by the phase retardation is described in terms of elliptical and rotational angles. In the case that a larger excitation than the bleaching intensity is applied, the signal light can be amplified due to the presence of gain in the CdSe quantum dot. This enables a longer propagation of the signal light relative to the metal loss, resulting in more feasible polarization modulation.

Influence of Surface Modifications on the Spatiotemporal Microdistribution of Quantum Dots In Vivo.

PubMed

Nekolla, Katharina; Kick, Kerstin; Sellner, Sabine; Mildner, Karina; Zahler, Stefan; Zeuschner, Dagmar; Krombach, Fritz; Rehberg, Markus

2016-05-01

For biomedical applications of nanoconstructs, it is a general prerequisite to efficiently reach the desired target site. In this regard, it is crucial to determine the spatiotemporal distribution of nanomaterials at the microscopic tissue level. Therefore, the effect of different surface modifications on the distribution of microinjected quantum dots (QDs) in mouse skeletal muscle tissue has been investigated. In vivo real-time fluorescence microscopy and particle tracking reveal that carboxyl QDs preferentially attach to components of the extracellular matrix (ECM), whereas QDs coated with polyethylene glycol (PEG) show little interaction with tissue constituents. Transmission electron microscopy elucidates that carboxyl QDs adhere to collagen fibers as well as basement membranes, a type of ECM located on the basolateral side of blood vessel walls. Moreover, carboxyl QDs have been found in endothelial junctions as well as in caveolae of endothelial cells, enabling them to translocate into the vessel lumen. The in vivo QD distribution is confirmed by in vitro experiments. The data suggest that ECM components act as a selective barrier depending on QD surface modification. For future biomedical applications, such as targeting of blood vessel walls, the findings of this study offer design criteria for nanoconstructs that meet the requirements of the respective application. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.

Facilitated preparation of bioconjugatable zwitterionic quantum dots using dual-lipid encapsulation.

PubMed

Shrake, Robert; Demillo, Violeta G; Ahmadiantehrani, Mojtaba; Zhu, Xiaoshan; Publicover, Nelson G; Hunter, Kenneth W

2015-01-01

Zwitterionic quantum dots prepared through incorporated zwitterionic ligands on quantum dot surfaces, are being paid significant attention in biomedical applications because of their excellent colloidal stability across a wide pH and ionic strength range, antifouling surface, good biocompatibility, etc. In this work, we report a dual-lipid encapsulation approach to prepare bioconjugatable zwitterionic quantum dots using amidosulfobetaine-16 lipids, dipalmitoyl-sn-glycero-3-phosphoethanolamine lipids with functional head groups, and CuInS2/ZnS quantum dots in a tetrahydrofuran/methanol/water solvent system with sonication. Amidosulfobetaine-16 is a zwitterionic lipid and dipalmitoyl-sn-glycero-3-phosphoethanolamine, with its functional head, provides bioconjugation capability. Under sonication, tetrahydrofuran/methanol containing amidosulfobetaine-16, dipalmitoyl-sn-glycero-3-phosphoethanolamine, and hydrophobic quantum dots are dispersed in water to form droplets. Highly water-soluble tetrahydrofuran/methanol in droplets is further displaced by water, which induces the lipid self-assembling on hydrophobic surface of quantum dots and thus forms water soluble zwitterionic quantum dots. The prepared zwitterionic quantum dots maintain colloidal stability in aqueous solutions with high salinity and over a wide pH range. They are also able to be conjugated with biomolecules for bioassay with minimal nonspecific binding. Copyright © 2014 Elsevier Inc. All rights reserved.

High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light.

PubMed

Lee, Wook-Jae; Senanayake, Pradeep; Farrell, Alan C; Lin, Andrew; Hung, Chung-Hong; Huffaker, Diana L

2016-01-13

InAs1-xSbx nanowires have recently attracted interest for infrared sensing applications due to the small bandgap and high thermal conductivity. However, previous reports on nanowire-based infrared sensors required low operating temperatures in order to mitigate the high dark current and have shown poor sensitivities resulting from reduced light coupling efficiency beyond the diffraction limit. Here, InAsSb nanopillar photodiodes with high quantum efficiency are achieved by partially coating the nanopillar with metal that excites localized surface plasmon resonances, leading to quantum efficiencies of ∼29% at 2390 nm. These high quantum efficiency nanopillar photodiodes, with 180 nm diameters and 1000 nm heights, allow operation at temperatures as high as 220 K and exhibit a detection wavelength up to 3000 nm, well beyond the diffraction limit. The InAsSb nanopillars are grown on low cost GaAs (111)B substrates using an InAs buffer layer, making our device architecture a promising path toward low-cost infrared focal plane arrays with high operating temperature.

Transport and collective radiance in a basic quantum chiral optical model

NASA Astrophysics Data System (ADS)

Kornovan, D. F.; Petrov, M. I.; Iorsh, I. V.

2017-09-01

In our work, we theoretically study the dynamics of a single excitation in a one-dimensional array of two-level systems, which are chirally coupled through a single mode waveguide. The chirality is achieved owing to a strong optical spin-locking effect, which in an ideal case gives perfect unidirectional excitation transport. We obtain a simple analytical solution for a single excitation dynamics in the Markovian limit, which directly shows the tolerance of the system with respect to the fluctuations of emitters position. We also show that the Dicke state, which is well known to be superradiant, has twice lower emission rate in the case of unidirectional quantum interaction. Our model is supported and verified with the numerical computations of quantum emitters coupled via surface plasmon modes in a metallic nanowire. The obtained results are based on a very general model and can be applied to any chirally coupled system that gives a new outlook on quantum transport in chiral nanophotonics.

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

NASA Technical Reports Server (NTRS)

Qui, Yueming; Gogna, Pawan; Muller, Richard; Maker, paul; Wilson, Daniel; Stintz, Andreas; Lester, Luke

2003-01-01

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB.

Abstractive dissociation of oxygen over Al(111): a nonadiabatic quantum model.

PubMed

Katz, Gil; Kosloff, Ronnie; Zeiri, Yehuda

2004-02-22

The dissociation of oxygen on a clean aluminum surface is studied theoretically. A nonadiabatic quantum dynamical model is used, based on four electronically distinct potential energy surfaces characterized by the extent of charge transfer from the metal to the adsorbate. A flat surface approximation is used to reduce the computation complexity. The conservation of the helicopter angular momentum allows Boltzmann averaging of the outcome of the propagation of a three degrees of freedom wave function. The dissociation event is simulated by solving the time-dependent Schrödinger equation for a period of 30 femtoseconds. As a function of incident kinetic energy, the dissociation yield follows the experimental trend. An attempt at simulation employing only the lowest adiabatic surface failed, qualitatively disagreeing with both experiment and nonadiabatic calculations. The final products, adsorptive dissociation and abstractive dissociation, are obtained by carrying out a semiclassical molecular dynamics simulation with surface hopping which describes the back charge transfer from an oxygen atom negative ion to the surface. The final adsorbed oxygen pair distribution compares well with experiment. By running the dynamical events backward in time, a correlation is established between the products and the initial conditions which lead to their production. Qualitative agreement is thus obtained with recent experiments that show suppression of abstraction by rotational excitation. (c) 2004 American Institute of Physics.

Domain and network aggregation of CdTe quantum rods within Langmuir Blodgett monolayers

NASA Astrophysics Data System (ADS)

Zimnitsky, Dmitry; Xu, Jun; Lin, Zhiqun; Tsukruk, Vladimir V.

2008-05-01

Control over the organization of quantum rods was demonstrated by changing the surface area at the air-liquid interface by means of the Langmuir-Blodgett (LB) technique. The LB isotherm of CdTe quantum rods capped with a mixture of alkylphosphines shows a transition point in the liquid-solid state, which is caused by the inter-rod reorganization. As we observed, at low surface pressure the quantum rods are assembled into round-shaped aggregates composed of a monolayer of nanorods packed in limited-size clusters with random orientation. The increase of the surface pressure leads to the rearrangement of these aggregates into elongated bundles composed of uniformly oriented nanorod clusters. Further compression results in denser packing of nanorods aggregates and in the transformation of monolayered domains into a continuous network of locally ordered quantum rods.

Characterization and Analysis of a Multicolor Quantum Well Infrared Photodetector

DTIC Science & Technology

2006-06-01

and characterization of performance of a newly designed, multicolor quantum well infrared photodetector ( QWIP ). Specifically, it focuses on a detector...quantum well infrared detectors makes them suitable for use in the field. 15. NUMBER OF PAGES 67 14. SUBJECT TERMS Quantum Well, QWIP , Three...characterization of performance of a newly designed, multicolor quantum well infrared photodetector ( QWIP ). Specifically, it focuses on a detector

In situ plasma removal of surface contaminants from ion trap electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haltli, Raymond A.

2015-05-01

In this thesis, the construction and implementation of an in situ plasma discharge designed to remove surface contaminants from electrodes in an ion trapping experimental system is presented with results. In recent years, many advances have been made in using ion traps for quantum information processing. All of the criteria defined by DiVincenzo for using ion traps for implementing a quantum computer have been individually demonstrated, and in particular surface traps provide a scalable platform for ions. In order to be used for quantum algorithms, trapped ions need to be cooled to their motional (quantum mechanical) ground state. One ofmore » the hurdles in integrating surface ion traps for a quantum computer is minimizing electric field noise, which causes the ion to heat out of its motional ground state and which increases with smaller ion-to-electrode distances realized with surface traps. Surface contamination of trap electrodes is speculated to be the primary source of electric field noise. The main goal achieved by this work was to implement an in situ surface cleaning solution for surface electrode ion traps, which would not modify the ion trap electrode surface metal. Care was taken in applying the RF power in order to localize a plasma near the trap electrodes. A method for characterizing the energy of the plasma ions arriving at the ion trap surface is presented and results for plasma ion energies are shown. Finally, a method for quantifying the effectiveness of plasma cleaning of trap electrodes, using the surface analysis technique of X-ray photoelectron spectroscopy for measuring the amount and kind of surface contaminants, is described. A significant advantage of the trap electrode surface cleaning method presented here is the minimal changes necessary for implementation on a working ion trap experimental system.« less

Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids

DTIC Science & Technology

2014-04-17

ex-situ techniques when it comes to both CQD integration as well as regrowth, since the surface is free of contaminants and native oxides . 3.0...monitor the growth surface. The growth was started on a GaSb substrate through a thermal oxide desorption process at 540 C and then a GaSb smoothing...reduces the danger of contamination and/or oxidation of the produced CQDs, and also provides for the removal of any gas byproducts from the

Spatial dispersion in atom-surface quantum friction

DOE PAGES

Reiche, D.; Dalvit, D. A. R.; Busch, K.; ...

2017-04-15

We investigate the influence of spatial dispersion on atom-surface quantum friction. We show that for atom-surface separations shorter than the carrier's mean free path within the material, the frictional force can be several orders of magnitude larger than that predicted by local optics. In addition, when taking into account spatial dispersion effects, we show that the commonly used local thermal equilibrium approximation underestimates by approximately 95% the drag force, obtained by employing the recently reported nonequilibrium fluctuation-dissipation relation for quantum friction. Unlike the treatment based on local optics, spatial dispersion in conjunction with corrections to local thermal equilibrium change notmore » only the magnitude but also the distance scaling of quantum friction.« less

Self-assembling hybrid diamond-biological quantum devices

NASA Astrophysics Data System (ADS)

Albrecht, A.; Koplovitz, G.; Retzker, A.; Jelezko, F.; Yochelis, S.; Porath, D.; Nevo, Y.; Shoseyov, O.; Paltiel, Y.; Plenio, M. B.

2014-09-01

The realization of scalable arrangements of nitrogen vacancy (NV) centers in diamond remains a key challenge on the way towards efficient quantum information processing, quantum simulation and quantum sensing applications. Although technologies based on implanting NV-centers in bulk diamond crystals or hybrid device approaches have been developed, they are limited by the achievable spatial resolution and by the intricate technological complexities involved in achieving scalability. We propose and demonstrate a novel approach for creating an arrangement of NV-centers, based on the self-assembling capabilities of biological systems and their beneficial nanometer spatial resolution. Here, a self-assembled protein structure serves as a structural scaffold for surface functionalized nanodiamonds, in this way allowing for the controlled creation of NV-structures on the nanoscale and providing a new avenue towards bridging the bio-nano interface. One-, two- as well as three-dimensional structures are within the scope of biological structural assembling techniques. We realized experimentally the formation of regular structures by interconnecting nanodiamonds using biological protein scaffolds. Based on the achievable NV-center distances of 11 nm, we evaluate the expected dipolar coupling interaction with neighboring NV-centers as well as the expected decoherence time. Moreover, by exploiting these couplings, we provide a detailed theoretical analysis on the viability of multiqubit quantum operations, suggest the possibility of individual addressing based on the random distribution of the NV intrinsic symmetry axes and address the challenges posed by decoherence and imperfect couplings. We then demonstrate in the last part that our scheme allows for the high-fidelity creation of entanglement, cluster states and quantum simulation applications.

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zh.M.; Seydmohamadi, Sh.; Lee, J.H.

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

Optimal control of open quantum systems: A combined surrogate Hamiltonian optimal control theory approach applied to photochemistry on surfaces

NASA Astrophysics Data System (ADS)

Asplund, Erik; Klüner, Thorsten

2012-03-01

In this paper, control of open quantum systems with emphasis on the control of surface photochemical reactions is presented. A quantum system in a condensed phase undergoes strong dissipative processes. From a theoretical viewpoint, it is important to model such processes in a rigorous way. In this work, the description of open quantum systems is realized within the surrogate Hamiltonian approach [R. Baer and R. Kosloff, J. Chem. Phys. 106, 8862 (1997)], 10.1063/1.473950. An efficient and accurate method to find control fields is optimal control theory (OCT) [W. Zhu, J. Botina, and H. Rabitz, J. Chem. Phys. 108, 1953 (1998), 10.1063/1.475576; Y. Ohtsuki, G. Turinici, and H. Rabitz, J. Chem. Phys. 120, 5509 (2004)], 10.1063/1.1650297. To gain control of open quantum systems, the surrogate Hamiltonian approach and OCT, with time-dependent targets, are combined. Three open quantum systems are investigated by the combined method, a harmonic oscillator immersed in an ohmic bath, CO adsorbed on a platinum surface, and NO adsorbed on a nickel oxide surface. Throughout this paper, atomic units, i.e., ℏ = me = e = a0 = 1, have been used unless otherwise stated.

Experimental and quantum-chemical studies on the three-particle fragmentation of neutral triatomic hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galster, Ulrich; Baumgartner, Frank; Mueller, Ulrich

2005-12-15

Dissociation of well-defined H{sub 3} Rydberg states into three ground state hydrogen atoms reveals characteristic correlation patterns in the center-of-mass motion of the three fragments. We present an extensive experimental dataset of momentum correlation maps for all lower Rydberg states of H{sub 3} and D{sub 3}. In particular the states with principal quantum number n=2 feature simple correlation patterns with regular occurence of mutual affinities. Energetically higher-lying states typically show more complex patterns which are unique for each state. Quantum-chemical calculations on adiabatic potential energy surfaces of H{sub 3} Rydberg states are presented to illuminate the likely origin of thesemore » differences. We discuss the likely dissociation mechanisms and paths which are responsible for the observed continuum correlation.« less

Intrinsic quantum anomalous Hall effect in the kagome lattice Cs 2LiMn 3F 12

DOE PAGES

Xu, Gang; Lian, Biao; Zhang, Shou -Cheng

2015-10-27

In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs 2Mn 3F 12 kagome lattice and on the (001) surface of a Cs 2LiMn 3F 12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Furthermore, a simplified tight binding modelmore » based on the in-plane ddσ antibonding states is constructed to understand the topological band structures of the system.« less

[Imaging of surface cell antigens on the tumor sections of lymph nodes using fluorescence quantum dots].

PubMed

Rafalovskaia-Orlovskaia, E P; Gorgidze, L A; Gladkikh, A A; Tauger, S M; Vorob'ev, I A

2012-01-01

The usefulness of quantum dots for the immunofluorescent detection of surface antigens on the lymphoid cells has been studied. To optimize quantum dots detection we have upgraded fluorescent microscope that allows obtaining multiple images from different quantum dots from one section. Specimens stained with quantum dots remained stable over two weeks and practically did not bleach under mercury lamp illumination during tens of minutes. Direct conjugates of primary mouse monoclonal antibodies with quantum dots demonstrated high specificity and sufficient sensitivity in the case of double staining on the frozen sections. Because of the high stability of quantum dots' fluorescence, this method allows to analyze antigen coexpression on the lymphoid tissue sections for diagnostic purposes. The spillover of fluorescent signals from quantum dots into adjacent fluorescent channels, with maxima differing by 40 nm, did not exceed 8%, which makes the spectral compensation is practically unnecessary.

Aggregation control of quantum dots through ion-mediated hydrogen bonding shielding.

PubMed

Liu, Jianbo; Yang, Xiaohai; Wang, Kemin; He, Xiaoxiao; Wang, Qing; Huang, Jin; Liu, Yan

2012-06-26

Nanoparticle stabilization against detrimental aggregation is a critical parameter that needs to be well controlled. Herein, we present a facile and rapid ion-mediated dispersing technique that leads to hydrophilic aggregate-free quantum dots (QDs). Because of the shielding of the hydrogen bonds between cysteamine-capped QDs, the presence of F(-) ions disassembled the aggregates of QDs and afforded their high colloidal stability. The F(-) ions also greatly eliminated the nonspecific adsorption of the QDs on glass slides and cells. Unlike the conventional colloidal stabilized method that requires the use of any organic ligand and/or polymer for the passivation of the nanoparticle surface, the proposed approach adopts the small size and large diffusion coefficient of inorganic ions as dispersant, which offers the disaggregation a fast reaction dynamics and negligible influence on their intrinsic surface functional properties. Therefore, the ion-mediated dispersing strategy showed great potential in chemosensing and biomedical applications.

Six-dimensional quantum dynamics study for the dissociative adsorption of HCl on Au(111) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Tianhui; Fu, Bina; Zhang, Dong H., E-mail: zhangdh@dicp.ac.cn

The six-dimensional quantum dynamics calculations for the dissociative chemisorption of HCl on Au(111) are carried out using the time-dependent wave-packet approach, based on an accurate PES which was recently developed by neural network fitting to density functional theory energy points. The influence of vibrational excitation and rotational orientation of HCl on the reactivity is investigated by calculating the exact six-dimensional dissociation probabilities, as well as the four-dimensional fixed-site dissociation probabilities. The vibrational excitation of HCl enhances the reactivity and the helicopter orientation yields higher dissociation probability than the cartwheel orientation. A new interesting site-averaged effect is found for the titlemore » molecule-surface system that one can essentially reproduce the six-dimensional dissociation probability by averaging the four-dimensional dissociation probabilities over 25 fixed sites.« less

Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates

NASA Astrophysics Data System (ADS)

Lei, Hui; Zhou, Tong; Wang, Shuguang; Fan, Yongliang; Zhong, Zhenyang

2014-08-01

We report on the formation of large-area ordered Ge-Si compound quantum dot molecules (CQDMs) in a combination of nanosphere lithography and self-assembly. Truncated-pyramid-like Si dots with {11n} facets are readily formed, which are spatially ordered in a large area with controlled period and size. Each Si dot induces four self-assembled Ge-rich dots at its base edges that can be fourfold symmetric along <110> directions. A model based on surface chemical potential accounts well for these phenomena. Our results disclose the critical effect of surface curvature on the diffusion and the aggregation of Ge adatoms and shed new light on the unique features and the inherent mechanism of self-assembled QDs on patterned substrates. Such a configuration of one Si QD surrounded by fourfold symmetric Ge-rich QDs can be seen as a CQDM with unique features, which will have potential applications in novel devices.

Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yu, E-mail: yu.zhao@insa-rennes.fr; Bertru, Nicolas; Folliot, Hervé

We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to themore » surface energy changes induced by Sb atoms on surface.« less

Ion traps fabricated in a CMOS foundry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehta, K. K.; Ram, R. J.; Eltony, A. M.

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size.more » This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.« less

Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO2/n-Type ZnO Photoelectric Device.

PubMed

Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Huang, Peng; Zhang, Xin; Feng, Boxue

2015-04-22

Carbon quantum dots (C QDs)/p-type CuAlO2/n-type ZnO photoelectric bilayer film composites were prepared by a simple route, through which ZnO films were sputtered on crystal quartz substrates and CuAlO2 films were prepared by sol-gel on ZnO films and then these bilayer films were composited with C QDs on their surface. The characterization results indicated that C QDs were well combined with the surface of the CuAlO2 films. The photovoltage and photocurrent of these bilayer film composites were investigated under illumination and darkness switching, which demonstrated to be significantly enhanced compared with those of the CuAlO2/ZnO bilayer films. Through analysis, this enhancement of the photoconductivity was mainly attributed to C QDs with unique up-converted photoluminescence behavior.

Transverse junction vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Schaus, C. F.; Torres, A. J.; Cheng, Julian; Sun, S.; Hains, C.

1991-04-01

An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p(+)-p-n(+) transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at an 855.8-nm lasing wavelength.

Phase Diagram of Fractional Quantum Hall Effect of Composite Fermions in Multi-Component Systems

NASA Astrophysics Data System (ADS)

Coimbatore Balram, Ajit; Töke, Csaba; Wójs, Arkadiusz; Jain, Jainendra

2015-03-01

The fractional quantum Hall effect (FQHE) of composite fermions (CFs) produces delicate states arising from a weak residual interaction between CFs. We study the spin phase diagram of these states, motivated by the recent experimental observation by Liu et al. of several spin-polarization transitions at 4/5, 5/7, 6/5, 9/7, 7/9, 8/11 and 10/13 in GaAs systems. We show that the FQHE of CFs is much more prevalent in multicomponent systems, and consider the feasibility of such states for systems with N components for an SU(N) symmetric interaction. Our results apply to GaAs quantum wells, wherein electrons have two components, to AlAs quantum wells and graphene, wherein electrons have four components (two spins and two valleys), and to an H-terminated Si(111) surface, which can have six components. We provide a fairly comprehensive list of possible incompressible FQH states of CFs, their SU(N) spin content, their energies, and their phase diagram as a function of the generalized ``Zeeman'' energy. The results are in good agreement with available experiments. DOE Grant No. DE-SC0005042, Hungarian Scientific Research Funds No. K105149 (CT), the Polish NCN grant 2011/01/B/ST3/04504 and the EU Marie Curie Grant PCIG09-GA-2011-294186.

Quantum Dot Surface Engineering: Toward Inert Fluorophores with Compact Size and Bright, Stable Emission

PubMed Central

Lim, Sung Jun; Ma, Liang; Schleife, André; Smith, Andrew M.

2016-01-01

The surfaces of colloidal nanocrystals are complex interfaces between solid crystals, coordinating ligands, and liquid solutions. For fluorescent quantum dots, the properties of the surface vastly influence the efficiency of light emission, stability, and physical interactions, and thus determine their sensitivity and specificity when they are used to detect and image biological molecules. But after more than 30 years of study, the surfaces of quantum dots remain poorly understood and continue to be an important subject of both experimental and theoretical research. In this article, we review the physics and chemistry of quantum dot surfaces and describe approaches to engineer optimal fluorescent probes for applications in biomolecular imaging and sensing. We describe the structure and electronic properties of crystalline facets, the chemistry of ligand coordination, and the impact of ligands on optical properties. We further describe recent advances in compact coatings that have significantly improved their properties by providing small hydrodynamic size, high stability and fluorescence efficiency, and minimal nonspecific interactions with cells and biological molecules. While major progress has been made in both basic and applied research, many questions remain in the chemistry and physics of quantum dot surfaces that have hindered key breakthroughs to fully optimize their properties. PMID:28344357

Quantum dynamical simulation of photoinduced electron transfer processes in dye-semiconductor systems: theory and application to coumarin 343 at TiO₂.

PubMed

Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael

2015-04-10

A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.

Energy and charge transfer in nanoscale hybrid materials.

PubMed

Basché, Thomas; Bottin, Anne; Li, Chen; Müllen, Klaus; Kim, Jeong-Hee; Sohn, Byeong-Hyeok; Prabhakaran, Prem; Lee, Kwang-Sup

2015-06-01

Hybrid materials composed of colloidal semiconductor quantum dots and π-conjugated organic molecules and polymers have attracted continuous interest in recent years, because they may find applications in bio-sensing, photodetection, and photovoltaics. Fundamental processes occurring in these nanohybrids are light absorption and emission as well as energy and/or charge transfer between the components. For future applications it is mandatory to understand, control, and optimize the wide parameter space with respect to chemical assembly and the desired photophysical properties. Accordingly, different approaches to tackle this issue are described here. Simple organic dye molecules (Dye)/quantum dot (QD) conjugates are studied with stationary and time-resolved spectroscopy to address the dynamics of energy and ultra-fast charge transfer. Micellar as well as lamellar nanostructures derived from diblock copolymers are employed to fine-tune the energy transfer efficiency of QD donor/dye acceptor couples. Finally, the transport of charges through organic components coupled to the quantum dot surface is discussed with an emphasis on functional devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Detector and readout performance goals for quantum well and strained layer superlattice focal plane arrays imaging under tactical and strategic backgrounds

NASA Astrophysics Data System (ADS)

Bandara, Sumith V.

2009-11-01

Advancements in III-V semiconductor based, Quantum-well infrared photodetector (QWIP) and Type-II Strained-Layer Superlattice detector (T2SLS) technologies have yielded highly uniform, large-format long-wavelength infrared (LWIR) QWIP FPAs and high quantum efficiency (QE), small format, LWIR T2SLS FPAs. In this article, we have analyzed the QWIP and T2SLS detector level performance requirements and readout integrated circuit (ROIC) noise levels for several staring array long-wavelength infrared (LWIR) imaging applications at various background levels. As a result of lower absorption QE and less than unity photoconductive gain, QWIP FPAs are appropriate for high background tactical applications. However, if the application restricts the integration time, QWIP FPA performance may be limited by the read noise of the ROIC. Rapid progress in T2SLS detector material has already demonstrated LWIR detectors with sufficient performance for tactical applications and potential for strategic applications. However, significant research is needed to suppress surface leakage currents in order to reproduce performances at pixel levels of T2SLS FPAs.

Well-Known Distinctive Signatures of Quantum Phase Transition in Shape Coexistence Configuration of Nuclei

NASA Astrophysics Data System (ADS)

Majarshin, A. Jalili; Sabri, H.

2018-03-01

It is interesting that a change of nuclear shape may be described in terms of a phase transition. This paper studies the quantum phase transition of the U(5) to SO(6) in the interacting boson model (IBM) on the finite number N of bosons. This paper explores the well-known distinctive signatures of transition from spherical vibrational to γ-soft shape phase in the IBM with the variation of a control parameter. Quantum phase transitions occur as a result of properties of ground and excited states levels. We apply an affine \\widehat {SU(1,1)} approach to numerically solve non-linear Bethe Ansatz equation and point out what observables are particularly sensitive to the transition. The main aim of this work is to describe the most prominent observables of QPT by using IBM in shape coexistence configuration. We calculate energies of excited states and signatures of QPT as energy surface, energy ratio, energy differences, quadrupole electric transition rates and expectation values of boson number operators and show their behavior in QPT. These observables are calculated and examined for 98 - 102Mo isotopes.

Well-Known Distinctive Signatures of Quantum Phase Transition in Shape Coexistence Configuration of Nuclei

NASA Astrophysics Data System (ADS)

Majarshin, A. Jalili; Sabri, H.

2018-06-01

It is interesting that a change of nuclear shape may be described in terms of a phase transition. This paper studies the quantum phase transition of the U(5) to SO(6) in the interacting boson model (IBM) on the finite number N of bosons. This paper explores the well-known distinctive signatures of transition from spherical vibrational to γ-soft shape phase in the IBM with the variation of a control parameter. Quantum phase transitions occur as a result of properties of ground and excited states levels. We apply an affine \\widehat {SU(1,1)} approach to numerically solve non-linear Bethe Ansatz equation and point out what observables are particularly sensitive to the transition. The main aim of this work is to describe the most prominent observables of QPT by using IBM in shape coexistence configuration. We calculate energies of excited states and signatures of QPT as energy surface, energy ratio, energy differences, quadrupole electric transition rates and expectation values of boson number operators and show their behavior in QPT. These observables are calculated and examined for 98 - 102Mo isotopes.

Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector via Quantum Well Intermixing

NASA Technical Reports Server (NTRS)

Sengupta, D.; Chang, Y. C.; Stillman, G.

1998-01-01

We have demonstrated red shifting and broadening of the wavelength response of a bound-to-continuum ultra-thin p-type InGaAs/InP quantum well infrared photodetector (QWIP) after growth via quantum well intermixing.

Tailoring optical metamaterials to tune the atom-surface Casimir-Polder interaction.

PubMed

Chan, Eng Aik; Aljunid, Syed Abdullah; Adamo, Giorgio; Laliotis, Athanasios; Ducloy, Martial; Wilkowski, David

2018-02-01

Metamaterials are fascinating tools that can structure not only surface plasmons and electromagnetic waves but also electromagnetic vacuum fluctuations. The possibility of shaping the quantum vacuum is a powerful concept that ultimately allows engineering the interaction between macroscopic surfaces and quantum emitters such as atoms, molecules, or quantum dots. The long-range atom-surface interaction, known as Casimir-Polder interaction, is of fundamental importance in quantum electrodynamics but also attracts a significant interest for platforms that interface atoms with nanophotonic devices. We perform a spectroscopic selective reflection measurement of the Casimir-Polder interaction between a Cs(6P 3/2 ) atom and a nanostructured metallic planar metamaterial. We show that by engineering the near-field plasmonic resonances of the metamaterial, we can successfully tune the Casimir-Polder interaction, demonstrating both a strong enhancement and reduction with respect to its nonresonant value. We also show an enhancement of the atomic spontaneous emission rate due to its coupling with the evanescent modes of the nanostructure. Probing excited-state atoms next to nontrivial tailored surfaces is a rigorous test of quantum electrodynamics. Engineering Casimir-Polder interactions represents a significant step toward atom trapping in the extreme near field, possibly without the use of external fields.

Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

NASA Astrophysics Data System (ADS)

Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

2008-07-01

This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

Quantum dynamics of the vibrations of helium bound to the nanosurface of a large planar organic molecule: phthalocyanine . He van der Waals complex.

PubMed

Gibbons, Brittney R; Xu, Minzhong; Bacić, Zlatko

2009-04-23

We report rigorous quantum three-dimensional calculations of highly excited intermolecular vibrational states of the van der Waals (vdW) complex phthalocyanine.He (Pc.He). The Pc molecule was treated as rigid and the intermolecular potential energy surface (IPES) was represented as a sum of atom-atom Lennard-Jones pair potentials. The IPES has four equivalent global minima on the diagonals of the square-shaped Pc, inside its five-membered rings, and four slightly shallower local minima between them, creating a distinctive corrugation pattern of the molecular nanosurface. The vdW vibrational states analyzed in this work extend to about two-thirds of the well depth of the IPES. For the assignment of the in-plane (xy) vdW vibrational excitations it was necessary to resort to two sets of quantum numbers, the Cartesian quantum numbers [nu(x), nu(y)] and the quantum numbers (v, l) of the 2D isotropic oscillator, depending on the nodal structure and the symmetry of the wave functions. The delocalization of the He atom parallel to the molecular surface is large already in the ground vdW state. It increases rapidly with the number of quanta in the in-plane vdW vibrations, with the maximum root-mean-square amplitudes Deltax and Deltay of about 7 au at the excitation energies around 40 cm(-1). The wave functions of the highly excited states tend to be delocalized over the entire nanosurface and often have a square shape, reflecting that of the substrate.

Structural and Thermodynamic Properties of the Argon Dimer: A Computational Chemistry Exercise in Quantum and Statistical Mechanics

ERIC Educational Resources Information Center

Halpern, Arthur M.

2010-01-01

Using readily available computational applications and resources, students can construct a high-level ab initio potential energy surface (PES) for the argon dimer. From this information, they can obtain detailed molecular constants of the dimer, including its dissociation energy, which compare well with experimental determinations. Using both…

Exploration of organic-inorganic hybrid perovskites for surface-enhanced infrared spectroscopy of small molecules.

PubMed

Chen, Jia; Mo, Zhi-Hong; Yang, Xiao; Zhou, Hai-Ling; Gao, Qin

2017-06-22

The organic-inorganic hybrid perovskites efficiently enhance the infrared absorption of small molecules. It is suggested that the quantum wells of perovskites enable the electrons of the perovskites to be excited by light in the infrared region. The exploration has opened a new path for chemical sensing through infrared spectroscopy.

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P.

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of themore » quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.« less

Communication: Methane dissociation on Ni(111) surface: Importance of azimuth and surface impact site

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Xiangjian; State Key Laboratory of Molecular Reaction Dynamics and Center for Theoretical Computational Chemistry, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023; Zhang, Zhaojun, E-mail: zhangzhj@dicp.ac.cn, E-mail: zhangdh@dicp.ac.cn

2016-03-14

Understanding the role of reactant ro-vibrational degrees of freedom (DOFs) in reaction dynamics of polyatomic molecular dissociation on metal surfaces is of great importance to explore the complex chemical reaction mechanism. Here, we present an expensive quantum dynamics study of the dissociative chemisorption of CH{sub 4} on a rigid Ni(111) surface by developing an accurate nine-dimensional quantum dynamical model including the DOF of azimuth. Based on a highly accurate fifteen-dimensional potential energy surface built from first principles, our simulations elucidate that the dissociation probability of CH{sub 4} has the strong dependence on azimuth and surface impact site. Some improvements aremore » suggested to obtain the accurate dissociation probability from quantum dynamics simulations.« less

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Mind Star

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well bandmore » profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.« less

Imaging a multidimensional multichannel potential energy surface: Photodetachment of H{sup −}(NH{sub 3}) and NH{sub 4}{sup −}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Qichi; Johnson, Christopher J.; Continetti, Robert E., E-mail: hguo@umn.edu, E-mail: rcontinetti@ucsd.edu

2016-06-28

Probes of the Born-Oppenheimer potential energy surfaces governing polyatomic molecules often rely on spectroscopy for the bound regions or collision experiments in the continuum. A combined spectroscopic and half-collision approach to image nuclear dynamics in a multidimensional and multichannel system is reported here. The Rydberg radical NH{sub 4} and the double Rydberg anion NH{sub 4}{sup −} represent a polyatomic system for benchmarking electronic structure and nine-dimensional quantum dynamics calculations. Photodetachment of the H{sup −}(NH{sub 3}) ion-dipole complex and the NH{sub 4}{sup −} DRA probes different regions on the neutral NH{sub 4} PES. Photoelectron energy and angular distributions at photon energiesmore » of 1.17, 1.60, and 2.33 eV compare well with quantum dynamics. Photoelectron-photofragment coincidence experiments indicate dissociation of the nascent NH{sub 4} Rydberg radical occurs to H + NH{sub 3} with a peak kinetic energy of 0.13 eV, showing the ground state of NH{sub 4} to be unstable, decaying by tunneling-induced dissociation on a time scale beyond the present scope of multidimensional quantum dynamics.« less

Black Holes as Brains: Neural Networks with Area Law Entropy

NASA Astrophysics Data System (ADS)

Dvali, Gia

2018-04-01

Motivated by the potential similarities between the underlying mechanisms of the enhanced memory storage capacity in black holes and in brain networks, we construct an artificial quantum neural network based on gravity-like synaptic connections and a symmetry structure that allows to describe the network in terms of geometry of a d-dimensional space. We show that the network possesses a critical state in which the gapless neurons emerge that appear to inhabit a (d-1)-dimensional surface, with their number given by the surface area. In the excitations of these neurons, the network can store and retrieve an exponentially large number of patterns within an arbitrarily narrow energy gap. The corresponding micro-state entropy of the brain network exhibits an area law. The neural network can be described in terms of a quantum field, via identifying the different neurons with the different momentum modes of the field, while identifying the synaptic connections among the neurons with the interactions among the corresponding momentum modes. Such a mapping allows to attribute a well-defined sense of geometry to an intrinsically non-local system, such as the neural network, and vice versa, it allows to represent the quantum field model as a neural network.

Quantum-state-resolved CO2 scattering dynamics at the gas-liquid interface: dependence on incident angle.

PubMed

Perkins, Bradford G; Nesbitt, David J

2007-08-09

Energy transfer dynamics at the gas-liquid interface have been probed with a supersonic molecular beam of CO2 and a clean perfluorinated-liquid surface in vacuum. High-resolution infrared spectroscopy measures both the rovibrational state populations and the translational distributions for the scattered CO2 flux. The present study investigates collision dynamics as a function of incident angle (thetainc = 0 degrees, 30 degrees, 45 degrees, and 60 degrees), where column-integrated quantum state populations are detected along the specular-scattering direction (i.e., thetascat approximately thetainc). Internal state rovibrational and Doppler translational distributions in the scattered CO2 yield clear evidence for nonstatistical behavior, providing quantum-state-resolved support for microscopic branching of the gas-liquid collision dynamics into multiple channels. Specifically, the data are remarkably well described by a two-temperature model, which can be associated with both a trapping desorption (TD) component emerging at the surface temperature (Trot approximately TS) and an impulsive scattering (IS) component appearing at hyperthermal energies (Trot > TS). The branching ratio between the TD and IS channels is found to depend strongly on thetainc, with the IS component growing dramatically with increasingly steeper angle of incidence.

Overview of Stabilizing Ligands for Biocompatible Quantum Dot Nanocrystals

PubMed Central

Zhang, Yanjie; Clapp, Aaron

2011-01-01

Luminescent colloidal quantum dots (QDs) possess numerous advantages as fluorophores in biological applications. However, a principal challenge is how to retain the desirable optical properties of quantum dots in aqueous media while maintaining biocompatibility. Because QD photophysical properties are directly related to surface states, it is critical to control the surface chemistry that renders QDs biocompatible while maintaining electronic passivation. For more than a decade, investigators have used diverse strategies for altering the QD surface. This review summarizes the most successful approaches for preparing biocompatible QDs using various chemical ligands. PMID:22247651

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

Pixel-level plasmonic microcavity infrared photodetector

PubMed Central

Jing, You Liang; Li, Zhi Feng; Li, Qian; Chen, Xiao Shuang; Chen, Ping Ping; Wang, Han; Li, Meng Yao; Li, Ning; Lu, Wei

2016-01-01

Recently, plasmonics has been central to the manipulation of photons on the subwavelength scale, and superior infrared imagers have opened novel applications in many fields. Here, we demonstrate the first pixel-level plasmonic microcavity infrared photodetector with a single quantum well integrated between metal patches and a reflection layer. Greater than one order of magnitude enhancement of the peak responsivity has been observed. The significant improvement originates from the highly confined optical mode in the cavity, leading to a strong coupling between photons and the quantum well, resulting in the enhanced photo-electric conversion process. Such strong coupling from the localized surface plasmon mode inside the cavity is independent of incident angles, offering a unique solution to high-performance focal plane array devices. This demonstration paves the way for important infrared optoelectronic devices for sensing and imaging. PMID:27181111

Simulation of Optical Resonators for Vertical-Cavity Surface-Emitting Lasers (vcsel)

NASA Astrophysics Data System (ADS)

Mansour, Mohy S.; Hassen, Mahmoud F. M.; El-Nozahey, Adel M.; Hafez, Alaa S.; Metry, Samer F.

2010-04-01

Simulation and modeling of the reflectivity and transmissivity of the multilayer DBR of VCSEL, as well as inside the active region quantum well are analyzed using the characteristic matrix method. The electric field intensity distributions inside such vertical-cavity structure are calculated. A software program under MATLAB environment is constructed for the simulation. This study was performed for two specific Bragg wavelengths 980 nm and 370 nm for achieving a resonant periodic gain (RPG)

An orientation analysis method for protein immobilized on quantum dot particles

NASA Astrophysics Data System (ADS)

Aoyagi, Satoka; Inoue, Masae

2009-11-01

The evaluation of orientation of biomolecules immobilized on nanodevices is crucial for the development of high performance devices. Such analysis requires ultra high sensitivity so as to be able to detect less than one molecular layer on a device. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has sufficient sensitivity to evaluate the uppermost surface structure of a single molecular layer. The objective of this study is to develop an orientation analysis method for proteins immobilized on nanomaterials such as quantum dot particles, and to evaluate the orientation of streptavidin immobilized on quantum dot particles by means of TOF-SIMS. In order to detect fragment ions specific to the protein surface, a monoatomic primary ion source (Ga +) and a cluster ion source (Au 3+) were employed. Streptavidin-immobilized quantum dot particles were immobilized on aminosilanized ITO glass plates at amino groups by covalent bonding. The reference samples streptavidin directly immobilized on ITO plates were also prepared. All samples were dried with a freeze dryer before TOF-SIMS measurement. The positive secondary ion spectra of each sample were obtained using TOF-SIMS with Ga + and Au 3+, respectively, and then they were compared so as to characterize each sample and detect the surface structure of the streptavidin immobilized with the biotin-immobilized quantum dots. The chemical structures of the upper surface of the streptavidin molecules immobilized on the quantum dot particles were evaluated with TOF-SIMS spectra analysis. The indicated surface side of the streptavidin molecules immobilized on the quantum dots includes the biotin binding site.

Quantum theory of spontaneous and stimulated emission of surface plasmons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Archambault, Alexandre; Marquier, Francois; Greffet, Jean-Jacques

2010-07-15

We introduce a quantization scheme that can be applied to surface waves propagating along a plane interface. An important result is the derivation of the energy of the surface wave for dispersive nonlossy media without invoking any specific model for the dielectric constant. Working in Coulomb's gauge, we use a modal representation of the fields. Each mode can be associated with a quantum harmonic oscillator. We have applied the formalism to derive quantum mechanically the spontaneous emission rate of surface plasmon by a two-level system. The result is in very good agreement with Green's tensor approach in the nonlossy case.more » Green's approach allows also to account for losses, so that the limitations of a quantum approach of surface plasmons are clearly defined. Finally, the issue of stimulated versus spontaneous emission has been addressed. Because of the increasing density of states near the asymptote of the dispersion relation, it is quantitatively shown that the stimulated emission probability is too small to obtain gain in this frequency region.« less

Projective loop quantum gravity. I. State space

NASA Astrophysics Data System (ADS)

Lanéry, Suzanne; Thiemann, Thomas

2016-12-01

Instead of formulating the state space of a quantum field theory over one big Hilbert space, it has been proposed by Kijowski to describe quantum states as projective families of density matrices over a collection of smaller, simpler Hilbert spaces. Beside the physical motivations for this approach, it could help designing a quantum state space holding the states we need. In a latter work by Okolów, the description of a theory of Abelian connections within this framework was developed, an important insight being to use building blocks labeled by combinations of edges and surfaces. The present work generalizes this construction to an arbitrary gauge group G (in particular, G is neither assumed to be Abelian nor compact). This involves refining the definition of the label set, as well as deriving explicit formulas to relate the Hilbert spaces attached to different labels. If the gauge group happens to be compact, we also have at our disposal the well-established Ashtekar-Lewandowski Hilbert space, which is defined as an inductive limit using building blocks labeled by edges only. We then show that the quantum state space presented here can be thought as a natural extension of the space of density matrices over this Hilbert space. In addition, it is manifest from the classical counterparts of both formalisms that the projective approach allows for a more balanced treatment of the holonomy and flux variables, so it might pave the way for the development of more satisfactory coherent states.

Luminescence of quantum-well exciton polaritons from microstructured AlxGa1-xAs-GaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

1988-06-01

Periodic multiple-quantum-well wires have been prepared by etching five-layer quantum-well structures through a holographically prepared mask. The periodicity was 380 nm, the lateral confinement 180 nm, and the quantum-well width 13, nm. The luminescence from these microstructured systems in the frequency regime of the one-electron-one-heavy-hole transition was strongly polarized with the electric field perpendicular to the periodic structure. This effect was caused by the resonantly enhanced emission of quantum-well-exciton (QWE) polaritons. Excitation of QWE polaritons was also observed in reflection measurements on the microstructured samples.

Photosensitized electron transfer processes in SiO2 colloids and sodium lauryl sulfate micellar systems: Correlation of quantum yields with interfacial surface potentials

PubMed Central

Laane, Colja; Willner, Itamar; Otvos, John W.; Calvin, Melvin

1981-01-01

The effectiveness of negatively charged colloidal SiO2 particles in controlling photosensitized electron transfer reactions has been studied and compared with that of the negatively charged sodium lauryl sulfate (NaLauSO4) micellar system. In particular, the photosensitized reduction of the zwitterionic electron acceptor propylviologen sulfonate (PVS0) with tris(2,2′-bipyridinium)ruthenium(II) [Ru(bipy)32+] as the sensitizer and triethanolamine as the electron donor is found to have a quantum yield of 0.033 for formation of the radical anion (PVS[unk]) in the SiO2 colloid compared with 0.005 in the homogeneous system and 0.0086 in a NaLauSO4 micellar solution. The higher quantum yields obtained with the SiO2 colloidal system are attributed to substantial stabilization against back reaction of the intermediate photoproducts—i.e., Ru(bipy)33+ and PVS[unk]—by electrostatic repulsion of the reduced electron acceptor from the negatively charged particle surface. The binding properties of the SiO2 particles and NaLauSO4 micelles were investigated by flow dialysis. The results show that the sensitizer binds to both interfaces and that the SiO2 interface is characterized by a much higher surface potential than the micellar interface (≈-170 mV vs. -85 mV). The effect of ionic strength on the surface potential was estimated from the Gouy-Chapman theory, and the measured quantum yields of photosensitized electron transfer were correlated with surface potential at different ionic strengths. This correlation shows that the quantum yield is not affected by surface potentials smaller than ≈-40 mV. At larger potentials, the quantum yield increases rapidly. The quantum yield obtained in the micellar system at different strengths fits nicely on the correlation curve for the colloid SiO2 system. These results indicate that the surface potential is the dominant factor in the quantum yield improvement for PVS0 reduction. PMID:16593095

Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

DOE PAGES

Koirala, Nikesh; Han, Myung -Geun; Brahlek, Matthew; ...

2015-11-19

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In 2Se 3/(Bi 0.5In 0.5) 2Se 3 heterostructure, we introduce a quantum generation of Bi 2Se 3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hallmore » effect in Bi 2Se 3.« less

Quantum group symmetry of the quantum Hall effect on non-flat surfaces

NASA Astrophysics Data System (ADS)

Alimohammadi, M.; Shafei Deh Abad, A.

1996-02-01

After showing that the magnetic translation operators are not the symmetries of the quantum Hall effect (QHE) on non-flat surfaces, we show that another set of operators which leads to the quantum group symmetries for some of these surfaces exists. As a first example we show that the su(2) symmetry of the QHE on a sphere leads to 0305-4470/29/3/010/img6(2) algebra in the equator. We explain this result by a contraction of su(2). Second, with the help of the symmetry operators of QHE on the Poincaré upper half plane, we will show that the ground-state wavefunctions form a representation of the 0305-4470/29/3/010/img6(2) algebra.

Can quantum transition state theory be defined as an exact t = 0+ limit?

NASA Astrophysics Data System (ADS)

Jang, Seogjoo; Voth, Gregory A.

2016-02-01

The definition of the classical transition state theory (TST) as a t → 0+ limit of the flux-side time correlation function relies on the assumption that simultaneous measurement of population and flux is a well defined physical process. However, the noncommutativity of the two measurements in quantum mechanics makes the extension of such a concept to the quantum regime impossible. For this reason, quantum TST (QTST) has been generally accepted as any kind of quantum rate theory reproducing the TST in the classical limit, and there has been a broad consensus that no unique QTST retaining all the properties of TST can be defined. Contrary to this widely held view, Hele and Althorpe (HA) [J. Chem. Phys. 138, 084108 (2013)] recently suggested that a true QTST can be defined as the exact t → 0+ limit of a certain kind of quantum flux-side time correlation function and that it is equivalent to the ring polymer molecular dynamics (RPMD) TST. This work seeks to question and clarify certain assumptions underlying these suggestions and their implications. First, the time correlation function used by HA as a starting expression is not related to the kinetic rate constant by virtue of linear response theory, which is the first important step in relating a t = 0+ limit to a physically measurable rate. Second, a theoretical analysis calls into question a key step in HA's proof which appears not to rely on an exact quantum mechanical identity. The correction of this makes the true t = 0+ limit of HA's QTST different from the RPMD-TST rate expression, but rather equal to the well-known path integral quantum transition state theory rate expression for the case of centroid dividing surface. An alternative quantum rate expression is then formulated starting from the linear response theory and by applying a recently developed formalism of real time dynamics of imaginary time path integrals [S. Jang, A. V. Sinitskiy, and G. A. Voth, J. Chem. Phys. 140, 154103 (2014)]. It is shown that the t → 0+ limit of the new rate expression vanishes in the exact quantum limit.

Laser Cooling and Trapping of Neutral Strontium for Spectroscopic Measurements of Casimir-Polder Potentials

NASA Astrophysics Data System (ADS)

Cook, Eryn C.

Casimir and Casimir-Polder effects are forces between electrically neutral bodies and particles in vacuum, arising entirely from quantum fluctuations. The modification to the vacuum electromagnetic-field modes imposed by the presence of any particle or surface can result in these mechanical forces, which are often the dominant interaction at small separations. These effects play an increasingly critical role in the operation of micro- and nano-mechanical systems as well as miniaturized atomic traps for precision sensors and quantum-information devices. Despite their fundamental importance, calculations present theoretical and numeric challenges, and precise atom-surface potential measurements are lacking in many geometric and distance regimes. The spectroscopic measurement of Casimir-Polder-induced energy level shifts in optical-lattice trapped atoms offers a new experimental method to probe atom-surface interactions. Strontium, the current front-runner among optical frequency metrology systems, has demonstrated characteristics ideal for such precision measurements. An alkaline earth atom possessing ultra-narrow intercombination transitions, strontium can be loaded into an optical lattice at the "magic" wavelength where the probe transition is unperturbed by the trap light. Translation of the lattice will permit controlled transport of tightly-confined atomic samples to well-calibrated atom-surface separations, while optical transition shifts serve as a direct probe of the Casimir-Polder potential. We have constructed a strontium magneto-optical trap (MOT) for future Casimir-Polder experiments. This thesis will describe the strontium apparatus, initial trap performance, and some details of the proposed measurement procedure.

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yi; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared tomore » that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.« less

Quantum Yield of Single Surface Plasmons Generated by a Quantum Dot Coupled with a Silver Nanowire.

PubMed

Li, Qiang; Wei, Hong; Xu, Hongxing

2015-12-09

The interactions between surface plasmons (SPs) in metal nanostructures and excitons in quantum emitters (QEs) lead to many interesting phenomena and potential applications that are strongly dependent on the quantum yield of SPs. The difficulty in distinguishing all the possible exciton recombination channels hinders the experimental determination of SP quantum yield. Here, we experimentally measured for the first time the quantum yield of single SPs generated by the exciton-plasmon coupling in a system composed of a single quantum dot and a silver nanowire (NW). By utilizing the SP guiding property of the NW, the decay rates of all the exciton recombination channels, i.e., direct free space radiation channel, SP generation channel, and nonradiative damping channel, are quantitatively obtained. It is determined that the optimum emitter-NW coupling distance for the largest SP quantum yield is about 10 nm, resulting from the different distance-dependent decay rates of the three channels. These results are important for manipulating the coupling between plasmonic nanostructures and QEs and developing on-chip quantum plasmonic devices for potential nanophotonic and quantum information applications.

Quantum fluids of light in acoustic lattices

NASA Astrophysics Data System (ADS)

Cerda-Méndez, E. A.; Krizhanovskii, D. N.; Skolnick, M. S.; Santos, P. V.

2018-01-01

In this topical review, we report on the recent advances on the manipulation of hybrid light-matter quasi-particles called exciton-polaritons and their quantum condensed phases by means of acoustic and static periodic potentials. Polaritons are a superposition of photons and excitons and form in optical microcavities with quantum wells embedded in it. They are low-mass bosons in the dilute limit and have strong inter-particle interactions inherited from the excitonic component. Their capability to form quantum-condensed phases at temperatures in the kelvin range and to behave like quantum fluids makes them very attractive for novel solid-state devices. Since their de Broglie wavelength is of the order of a few micrometers, polaritons can be manipulated using static or dynamic potentials with micrometer scales. We present here a summary of the techniques used to submit polaritons and their condensed phases to periodic potentials, with an emphasis in dynamic ones produced by surface acoustic waves. We discuss the interesting phenomena that occur under such a modulation, such as condensation in excited states of the Brillouin zone, fragmentation of a condensate, formation of self-localized wavepackets, and Dirac and massive polaritons in static hexagonal and kagome lattices, respectively. The different techniques explored open the way to implement polariton-based quantum simulators, nano-optomechanic resonators and polaritonic topological insulators.

Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices.

PubMed

Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

2016-07-26

Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to restore nanocrystal stoichiometry can trigger the formation of epitaxial superlattices of PbSe and PbS quantum dots. More specifically, we show that both chalcogen-adding (sodium sulfide) and lead oleate displacing (amines) additives induce small area epitaxial superlattices of PbSe quantum dots. In the latter case, the amine basicity is a sensitive handle to tune the superlattice symmetry, with strong and weak bases yielding pseudohexagonal or quasi-square lattices, respectively. Through density functional theory calculations and in situ titrations monitored by nuclear magnetic resonance spectroscopy, we link this observation to the concomitantly different coordination enthalpy and ligand displacement potency of the amine. Next to that, an initial ∼10% reduction of the initial ligand density prior to monolayer formation and addition of a mild, lead oleate displacing chemical trigger such as aniline proved key to induce square superlattices with long-range, square micrometer order; an effect that is the more pronounced the larger the quantum dots. Because the approach applies to PbS quantum dots as well, we conclude that it offers a reproducible and rational method for the formation of highly ordered epitaxial quantum dot superlattices.

Fabrication of nanoscale heterostructures comprised of graphene-encapsulated gold nanoparticles and semiconducting quantum dots for photocatalysis.

PubMed

Li, Yuan; Chopra, Nitin

2015-05-21

Patterned growth of multilayer graphene shell encapsulated gold nanoparticles (GNPs) and their covalent linking with inorganic quantum dots are demonstrated. GNPs were grown using a xylene chemical vapor deposition process, where the surface oxidized gold nanoparticles catalyze the multilayer graphene shell growth in a single step process. The graphene shell encapsulating gold nanoparticles could be further functionalized with carboxylic groups, which were covalently linked to amine-terminated quantum dots resulting in GNP-quantum dot heterostructures. The compositions, morphologies, crystallinity, and surface functionalization of GNPs and their heterostructures with quantum dots were evaluated using microscopic, spectroscopic, and analytical methods. Furthermore, optical properties of the derived architectures were studied using both experimental methods and simulations. Finally, GNP-quantum dot heterostructures were studied for photocatalytic degradation of phenol.

HCl dissociating on a rigid Au(111) surface: A six-dimensional quantum mechanical study on a new potential energy surface based on the RPBE functional.

PubMed

Liu, Tianhui; Fu, Bina; Zhang, Dong H

2017-04-28

The dissociative chemisorption of HCl on the Au(111) surface has recently been an interesting and important subject, regarding the discrepancy between the theoretical dissociation probabilities and the experimental sticking probabilities. We here constructed an accurate full-dimensional (six-dimensional (6D)) potential energy surface (PES) based on the density functional theory (DFT) with the revised Perdew-Burke-Ernzerhof (RPBE) functional, and performed 6D quantum mechanical (QM) calculations for HCl dissociating on a rigid Au(111) surface. The effects of vibrational excitations, rotational orientations, and site-averaging approximation on the present RPBE PES are investigated. Due to the much higher barrier height obtained on the RPBE PES than on the PW91 PES, the agreement between the present theoretical and experimental results is greatly improved. In particular, at the very low kinetic energy, the QM-RPBE dissociation probability agrees well with the experimental data. However, the computed QM-RPBE reaction probabilities are still markedly different from the experimental values at most of the energy regions. In addition, the QM-RPBE results achieve good agreement with the recent ab initio molecular dynamics calculations based on the RPBE functional at high kinetic energies.

Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl; Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw; Kaminska, Agata

We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gapmore » pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of the built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.« less

Quantal Study of the Exchange Reaction for N + N2 using an ab initio Potential Energy Surface

NASA Technical Reports Server (NTRS)

Wang, Dunyou; Stallcop, James R.; Huo, Winifred M.; Dateo, Christopher E.; Schwenke, David W.; Partridge, Harry; Kwak, Dochan (Technical Monitor)

2002-01-01

The N + N2 exchange rate is calculated using a time-dependent quantum dynamics method on a newly determined ab initio potential energy surface (PES) for the ground A" state. This ab initio PES shows a double barrier feature in the interaction region with the barrier height at 47.2 kcal/mol, and a shallow well between these two barriers, with the minimum at 43.7 kcal/mol. A quantum dynamics wave packet calculation has been carried out using the fitted PES to compute the cumulative reaction probability for the exchange reaction of N + N2(J=O). The J - K shift method is then employed to obtain the rate constant for this reaction. The calculated rate constant is compared with experimental data and a recent quasi-classical calculation using a LEPS PES. Significant differences are found between the present and quasiclassical results. The present rate calculation is the first accurate 3D quantal dynamics study for N + N2 reaction system and the ab initio PES reported here is the first such surface for N3.

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

NASA Technical Reports Server (NTRS)

Levine, B. F.; Zussman, A.; Gunapala, S. D.; Asom, M. T.; Kuo, J. M.; Hobson, W. S.

1992-01-01

We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasi-continuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path; net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

PubMed

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Engineering the Eigenstates of Coupled Spin-1/2 Atoms on a Surface.

PubMed

Yang, Kai; Bae, Yujeong; Paul, William; Natterer, Fabian D; Willke, Philip; Lado, Jose L; Ferrón, Alejandro; Choi, Taeyoung; Fernández-Rossier, Joaquín; Heinrich, Andreas J; Lutz, Christopher P

2017-12-01

Quantum spin networks having engineered geometries and interactions are eagerly pursued for quantum simulation and access to emergent quantum phenomena such as spin liquids. Spin-1/2 centers are particularly desirable, because they readily manifest coherent quantum fluctuations. Here we introduce a controllable spin-1/2 architecture consisting of titanium atoms on a magnesium oxide surface. We tailor the spin interactions by atomic-precision positioning using a scanning tunneling microscope (STM) and subsequently perform electron spin resonance on individual atoms to drive transitions into and out of quantum eigenstates of the coupled-spin system. Interactions between the atoms are mapped over a range of distances extending from highly anisotropic dipole coupling to strong exchange coupling. The local magnetic field of the magnetic STM tip serves to precisely tune the superposition states of a pair of spins. The precise control of the spin-spin interactions and ability to probe the states of the coupled-spin network by addressing individual spins will enable the exploration of quantum many-body systems based on networks of spin-1/2 atoms on surfaces.

Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

PubMed

Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

2017-03-08

Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

Engineering the Eigenstates of Coupled Spin-1 /2 Atoms on a Surface

NASA Astrophysics Data System (ADS)

Yang, Kai; Bae, Yujeong; Paul, William; Natterer, Fabian D.; Willke, Philip; Lado, Jose L.; Ferrón, Alejandro; Choi, Taeyoung; Fernández-Rossier, Joaquín; Heinrich, Andreas J.; Lutz, Christopher P.

2017-12-01

Quantum spin networks having engineered geometries and interactions are eagerly pursued for quantum simulation and access to emergent quantum phenomena such as spin liquids. Spin-1 /2 centers are particularly desirable, because they readily manifest coherent quantum fluctuations. Here we introduce a controllable spin-1 /2 architecture consisting of titanium atoms on a magnesium oxide surface. We tailor the spin interactions by atomic-precision positioning using a scanning tunneling microscope (STM) and subsequently perform electron spin resonance on individual atoms to drive transitions into and out of quantum eigenstates of the coupled-spin system. Interactions between the atoms are mapped over a range of distances extending from highly anisotropic dipole coupling to strong exchange coupling. The local magnetic field of the magnetic STM tip serves to precisely tune the superposition states of a pair of spins. The precise control of the spin-spin interactions and ability to probe the states of the coupled-spin network by addressing individual spins will enable the exploration of quantum many-body systems based on networks of spin-1 /2 atoms on surfaces.

Neutron whispering gallery

NASA Astrophysics Data System (ADS)

Nesvizhevsky, Valery V.; Voronin, Alexei Yu.; Cubitt, Robert; Protasov, Konstantin V.

2010-02-01

The `whispering gallery' effect has been known since ancient times for sound waves in air, later in water and more recently for a broad range of electromagnetic waves: radio, optics, Roentgen and so on. It consists of wave localization near a curved reflecting surface and is expected for waves of various natures, for instance, for atoms and neutrons. For matter waves, it would include a new feature: a massive particle would be settled in quantum states, with parameters depending on its mass. Here, we present for the first time the quantum whispering-gallery effect for cold neutrons. This phenomenon provides an example of an exactly solvable problem analogous to the `quantum bouncer'; it is complementary to the recently discovered gravitationally bound quantum states of neutrons . These two phenomena provide a direct demonstration of the weak equivalence principle for a massive particle in a pure quantum state. Deeply bound whispering-gallery states are long-living and weakly sensitive to surface potential; highly excited states are short-living and very sensitive to the wall potential shape. Therefore, they are a promising tool for studying fundamental neutron-matter interactions, quantum neutron optics and surface physics effects.

Effect of interface roughness on Auger recombination in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Tan, Chee-Keong; Sun, Wei; Wierer, Jonathan J.; Tansu, Nelson

2017-03-01

Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

EDITORIAL: Progress in quantum technology: one photon at a time Progress in quantum technology: one photon at a time

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-07-01

Technological developments sparked by quantum mechanics and wave-particle duality are still gaining ground over a hundred years after the theories were devised. While the impact of the theories in fundamental research, philosophy and even art and literature is widely appreciated, the implications in device innovations continue to breed potential. Applications inspired by these concepts include quantum computation and quantum cryptography protocols based on single photons, among many others. In this issue, researchers in Germany and the US report a step towards precisely triggered single-photon sources driven by surface acoustic waves (SAWs) [1]. The work brings technology based on quantum mechanics yet another step closer to practical device reality. Generation of single 'antibunched' photons has been one of the key challenges to progress in quantum information processing and communication. Researchers from Toshiba and Cambridge University in the UK recently reported what they described as 'the first electrically driven single-photon source capable of emitting indistinguishable photons' [2]. Single-photon sources have been reported previously [3]. However the approach demonstrated by Shields and colleagues allows electrical control, which is particularly useful for implementing in compact devices. The researchers used a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode to demonstrate interference between single photons. They also present a complete theory based on the interference of photons with a Lorentzian spectrum, which they compare with both continuous-wave and pulsed experiments. The application of SAWs in achieving precisely triggered single-photon sources develops the work of researchers in Germany in the late 1990s [4]. Surface acoustic waves travel like sound waves, but are characterized by an amplitude that typically decays exponentially with depth into the substrate. As Rocke and colleagues demonstrated, they can be used to dissociate an optically excited exciton and spatially separate the electron and hole, thereby increasing the radiative lifetime by orders of magnitude. The interesting behaviour of SAWs has led to studies towards a number of other applications including sensing [5-7], synthesis and nanoassembly [8]. For applications in single-photon sources, the electron-hole pairs are transported by the SAW to a quantum dot where they recombine emitting a single photon. However, so far various limiting factors in the system, such as the low quality of the quantum dots used leading to multiple-exciton recombinations, have hindered potential applications of the system as a single-photon source. Control over high-quality quantum-dot self-assembly is constantly improving. Researchers at the University of California at Berkeley and Harvard University in the US report the ability to successfully position a small number of colloidal quantum dots to within less than 100 nm accuracy on metallic surfaces [9]. They use single-stranded DNA both to act as an anchor to the gold or silver substrates and to selectively bind to the quantum dots, allowing programmed assembly of quantum dots on plasmonic structures. More recently still, researchers in Germany have reported how they can controllably reduce the density of self-assembled InP quantum dots by cyclic deposition with growth interruptions [10]. The impressive control has great potential for quantum emitter use. In this issue, Völk, Krenner and colleagues use an alternative approach to demonstrate how they can improve the performance of single-photon sources using SAWs. They use an optimized system of isolated self-assembled quantum posts in a quantum-well structure and inject the carriers at a distance from the posts where recombination and emission take place [3]. The SAW dissociates the electron-hole pairs and transports them to the quantum posts, so the two carrier types arrive at the quantum post with a set time delay. Other approaches, such as Coulomb blockade ones, have struggled to achieve the sequential injection of the carriers

Edge-mode superconductivity in a two-dimensional topological insulator.

PubMed

Pribiag, Vlad S; Beukman, Arjan J A; Qu, Fanming; Cassidy, Maja C; Charpentier, Christophe; Wegscheider, Werner; Kouwenhoven, Leo P

2015-07-01

Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which have been predicted to occur in the surface states of three-dimensional systems, in the edge states of two-dimensional systems, and in one-dimensional wires. Localized Majorana zero-modes obey non-Abelian exchange statistics, making them interesting building blocks for topological quantum computing. Here, we report superconductivity induced in the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the two-dimensional topological phase. These experiments establish InAs/GaSb as a promising platform for the confinement of Majoranas into localized states, enabling future investigations of non-Abelian statistics.

Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers

NASA Astrophysics Data System (ADS)

Zhu, Yadan; Lu, Taiping; Zhou, Xiaorun; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

2017-11-01

Two-step grown low temperature GaN cap layers (LT-cap) are employed to improve the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs). The first LT-cap layer is grown in nitrogen atmosphere, while a small hydrogen flow is added to the carrier gas during the growth of the second LT-cap layer. High-resolution X-ray diffraction results indicate that the two-step growth method can improve the interface quality of MQWs. Room temperature photoluminescence (PL) tests show about two-fold enhancement in integrated PL intensity, only 25 meV blue-shift in peak energy and almost unchanged line width. On the basis of temperature-dependent PL characteristics analysis, it is concluded that the first and the second LT-cap layer play a different role during the growth of MQWs. The first LT-cap layer acts as a protective layer, which protects quantum well from serious indium loss and interface roughening resulting from the hydrogen over-etching. The hydrogen gas employed in the second LT-cap layer is in favor of reducing defect density and indium segregation. Consequently, interface/surface and optical properties are improved by adopting the two-step growth method.

Broadband light-emitting diode

DOEpatents

Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

1998-01-01

A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

Broadband light-emitting diode

DOEpatents

Fritz, I.J.; Klem, J.F.; Hafich, M.J.

1998-07-14

A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations

NASA Astrophysics Data System (ADS)

Crum, Dax M.; Valsaraj, Amithraj; David, John K.; Register, Leonard F.; Banerjee, Sanjay K.

2016-12-01

Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model tomorrow's ultra-scaled metal-oxide-semiconductor-field-effect-transistors. Here, we present the most complete treatment of quantum confinement and carrier degeneracy effects in a three-dimensional (3D) MC device simulator to date, and illustrate their significance through simulation of n-channel Si and III-V FinFETs. Original contributions include our treatment of far-from-equilibrium degenerate statistics and QC-based modeling of surface-roughness scattering, as well as considering quantum-confined phonon and ionized-impurity scattering in 3D. Typical MC simulations approximate degenerate carrier populations as Fermi distributions to model the Pauli-blocking (PB) of scattering to occupied final states. To allow for increasingly far-from-equilibrium non-Fermi carrier distributions in ultra-scaled and III-V devices, we instead generate the final-state occupation probabilities used for PB by sampling the local carrier populations as function of energy and energy valley. This process is aided by the use of fractional carriers or sub-carriers, which minimizes classical carrier-carrier scattering intrinsically incompatible with degenerate statistics. Quantum-confinement effects are addressed through quantum-correction potentials (QCPs) generated from coupled Schrödinger-Poisson solvers, as commonly done. However, we use these valley- and orientation-dependent QCPs not just to redistribute carriers in real space, or even among energy valleys, but also to calculate confinement-dependent phonon, ionized-impurity, and surface-roughness scattering rates. FinFET simulations are used to illustrate the contributions of each of these QCs. Collectively, these quantum effects can substantially reduce and even eliminate otherwise expected benefits of considered In0.53Ga0.47 As FinFETs over otherwise identical Si FinFETs despite higher thermal velocities in In0.53Ga0.47 As. It also may be possible to extend these basic uses of QCPs, however calculated, to still more computationally efficient drift-diffusion and hydrodynamic simulations, and the basic concepts even to compact device modeling.

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15}more » layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.« less

Quantum dynamics of water dissociative chemisorption on rigid Ni(111): An approximate nine-dimensional treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Bin, E-mail: bjiangch@ustc.edu.cn, E-mail: hguo@unm.edu; Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87131; Song, Hongwei

The quantum dynamics of water dissociative chemisorption on the rigid Ni(111) surface is investigated using a recently developed nine-dimensional potential energy surface. The quantum dynamical model includes explicitly seven degrees of freedom of D{sub 2}O at fixed surface sites, and the final results were obtained with a site-averaging model. The mode specificity in the site-specific results is reported and analyzed. Finally, the approximate sticking probabilities for various vibrationally excited states of D{sub 2}O are obtained considering surface lattice effects and formally all nine degrees of freedom. The comparison with experiment reveals the inaccuracy of the density functional theory and suggestsmore » the need to improve the potential energy surface.« less

Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots

NASA Astrophysics Data System (ADS)

Wang, Guodong; Ji, Huiqiang; Shen, Junling; Xu, Yonghao; Liu, Xiaolian; Fu, Ziyi

2018-04-01

The strong influences of temperature and vacuum on the optical properties of In0.3Ga0.7As surface quantum dots (SQDs) are systematically investigated by photoluminescence (PL) measurements. For comparison, optical properties of buried quantum dots (BQDs) are also measured. The line-width, peak wavelength, and lifetime of SQDs are significantly different from the BQDs with the temperature and vacuum varied. The differences in PL response when temperature varies are attributed to carrier transfer from the SQDs to the surface trap states. The obvious distinctions in PL response when vacuum varies are attributed to the SQDs intrinsic surface trap states inhibited by the water molecules. This research provides necessary information for device application of SQDs as surface-sensitivity sensors.

Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Enhanced photoluminescence of corrugated Al2O3 film assisted by colloidal CdSe quantum dots.

PubMed

Bai, Zhongchen; Hao, Licai; Zhang, Zhengping; Huang, Zhaoling; Qin, Shuijie

2017-05-19

We present the enhanced photoluminescence (PL) of a corrugated Al 2 O 3 film enabled by colloidal CdSe quantum dots. The colloidal CdSe quantum dots are fabricated directly on a corrugated Al 2 O 3 substrate using an electrochemical deposition (ECD) method in a microfluidic system. The photoluminescence is excited by using a 150 nm diameter ultraviolet laser spot of a scanning near-field optical microscope. Owing to the electron transfer from the conduction band of the CdSe quantum dots to that of Al 2 O 3 , the enhanced photoluminescence effect is observed, which results from the increase in the recombination rate of electrons and holes on the Al 2 O 3 surface and the reduction in the fluorescence of the CdSe quantum dots. A periodically-fluctuating fluorescent spectrum was exhibited because of the periodical wire-like corrugated Al 2 O 3 surface serving as an optical grating. The spectral topographic map around the fluorescence peak from the Al 2 O 3 areas covered with CdSe quantum dots was unique and attributed to the uniform deposition of CdSe QDs on the corrugated Al 2 O 3 surface. We believe that the microfluidic ECD system and the surface enhanced fluorescence method described in this paper have potential applications in forming uniform optoelectronic films of colloidal quantum dots with controllable QD spacing and in boosting the fluorescent efficiency of weak PL devices.

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

Toward understanding the roaming mechanism in H + MgH → Mg + HH reaction

DOE PAGES

Mauguiere, Frederic A. L.; Collins, Peter; Stamatiadis, Stamatis; ...

2016-02-26

The roaming mechanism in the reaction H + MgH →Mg + HH is investigated by classical and quantum dynamics employing an accurate ab initio threedimensional ground electronic state potential energy surface. The reaction dynamics are explored by running trajectories initialized on a four-dimensional dividing surface anchored on three-dimensional normally hyperbolic invariant manifold associated with a family of unstable orbiting periodic orbits in the entrance channel of the reaction (H + MgH). By locating periodic orbits localized in the HMgH well or involving H orbiting around the MgH diatom, and following their continuation with the total energy, regions in phase spacemore » where reactive or nonreactive trajectories may be trapped are found. In this way roaming reaction pathways are deduced in phase space. Patterns similar to periodic orbits projected into configuration space are found for the quantum bound and resonance eigenstates. Roaming is attributed to the capture of the trajectories in the neighborhood of certain periodic orbits. As a result, the complex forming trajectories in the HMgH well can either return to the radical channel or “roam” to the MgHH minimum from where the molecule may react.« less

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

PubMed

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2018-01-01

Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ˜1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230-250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstrate that the proposed AlN-delta-GaN QWs would potentially lead to high-efficiency TE-polarized surface-emitting DUV LEDs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001) GaAs

NASA Astrophysics Data System (ADS)

Junno, B.; Paulsson, G.; Miller, M.; Samuelson, L.

1994-03-01

InGaAs quantum wells (QWs) were grown in a chemical beam epitaxy (CBE) machine with trimethylindium (TMI), triethylgallium (TEG) and tertiarybutylarsine (TBA) as precursors. Growth was monitored in-situ by reflectance difference (RD) and reflection high energy electron diffraction (RHEED), on both flat and vicinal (2° off in the <111> A direction) (001)GaAs substrates. The RD was monitored at 632.8 nm. At this wavelength the RD signal from a GaAs surface is primarily related to the absorption by Ga dimers. When InGaAs had been grown, both the average RD signal and the amplitude of the RD oscillations for the subsequent growth of GaAs increased significantly, compared to GaAs growth on GaAs. This In influence was found to persist even after the growth of 20-30 ML of pure GaAs. As a result we were able to monitor growth oscillations with RD and RHEED simultaneously during growth of quantum wells of InGaAs in GaAs. As a conclusion to these observations we suggest that the group III dimer bond concentration, detected in the RD signal, increases.

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

NASA Astrophysics Data System (ADS)

Laroche, Dominique; Huang, Shih-Hsien; Nielsen, Erik; Chuang, Yen; Li, Jiun-Yun; Liu, Chih-Wen; Lu, Tzu-Ming

We report the magneto-transport and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with the shallowest 2DEG located only ~ 10 nm away from the surface. The peak mobility increases with increasing depth, suggesting that charge centers near the oxide/semiconductor interface is the main source of disorder. The power-law exponent of the mobility versus density curve, μ ~nα , is extracted as a function of the depth. At intermediate densities, the power-law dependence is characterized by α ~ 2 . 3 while at the highest achievable densities for devices with intermediate depth, an exponent α ~ 5 is observed. We propose, and show by simulations, that this increase in α is explained by a non-equilibrium model where electrons migrating to the surface smooth out the potential landscape seen by the 2DEG. This work has been supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). Sandia National Laboratories is a multi program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under contract DE-AC04-94AL

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Forman, Charles A.; Lee, SeungGeun; Young, Erin C.; Kearns, Jared A.; Cohen, Daniel A.; Leonard, John T.; Margalith, Tal; DenBaars, Steven P.; Nakamura, Shuji

2018-03-01

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture, a tunnel junction intracavity contact, and a dual dielectric distributed Bragg reflector design. The reported VCSEL has 2 quantum wells, with a 14 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 23 λ total cavity thickness. The thermal performance was improved by increasing the cavity length and using Au-In solid-liquid interdiffusion bonding, which led to lasing under CW operation for over 20 min. Lasing wavelengths under pulsed operation were observed at 406 nm, 412 nm, and 419 nm. Only the latter two modes appeared under CW operation due to the redshifted gain at higher temperatures. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 140 μW and 700 μW, respectively. The fundamental transverse mode was observed without the presence of filamentary lasing. The thermal impedance was estimated to be ˜1400 °C/W for a 6 μm aperture 23 λ VCSEL.

Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors

NASA Astrophysics Data System (ADS)

Steiner, M. A.; Perl, E. E.; Geisz, J. F.; Friedman, D. J.; Jain, N.; Levi, D.; Horner, G.

2017-04-01

We demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important the bandgap be determined from the external quantum efficiency.

On the Effect of Dipole-Dipole Interactions on the Quantum Statistics of Surface Plasmons in Multiparticle Spaser Systems

NASA Astrophysics Data System (ADS)

Shesterikov, A. V.; Gubin, M. Yu.; Karpov, S. N.; Prokhorov, A. V.

2018-04-01

The problem of controlling the quantum dynamics of localized plasmons has been considered in the model of a four-particle spaser composed of metallic nanoparticles and semiconductor quantum dots. Conditions for the observation of stable steady-state regimes of the formation of surface plasmons in this model have been determined in the mean-field approximation. It has been shown that the presence of strong dipole-dipole interactions between metallic nanoparticles of the spaser system leads to a considerable change in the quantum statistics of plasmons generated on the nanoparticles.

Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors

DOE PAGES

Steiner, Myles A.; Perl, E. E.; Geisz, J. F.; ...

2017-04-28

Here, we demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important that the bandgap be determined from the external quantum efficiency.

High-Threshold Fault-Tolerant Quantum Computation with Analog Quantum Error Correction

NASA Astrophysics Data System (ADS)

Fukui, Kosuke; Tomita, Akihisa; Okamoto, Atsushi; Fujii, Keisuke

2018-04-01

To implement fault-tolerant quantum computation with continuous variables, the Gottesman-Kitaev-Preskill (GKP) qubit has been recognized as an important technological element. However, it is still challenging to experimentally generate the GKP qubit with the required squeezing level, 14.8 dB, of the existing fault-tolerant quantum computation. To reduce this requirement, we propose a high-threshold fault-tolerant quantum computation with GKP qubits using topologically protected measurement-based quantum computation with the surface code. By harnessing analog information contained in the GKP qubits, we apply analog quantum error correction to the surface code. Furthermore, we develop a method to prevent the squeezing level from decreasing during the construction of the large-scale cluster states for the topologically protected, measurement-based, quantum computation. We numerically show that the required squeezing level can be relaxed to less than 10 dB, which is within the reach of the current experimental technology. Hence, this work can considerably alleviate this experimental requirement and take a step closer to the realization of large-scale quantum computation.

Topics in quantum chaos

NASA Astrophysics Data System (ADS)

Jordan, Andrew Noble

2002-09-01

In this dissertation, we study the quantum mechanics of classically chaotic dynamical systems. We begin by considering the decoherence effects a quantum chaotic system has on a simple quantum few state system. Typical time evolution of a quantum system whose classical limit is chaotic generates structures in phase space whose size is much smaller than Planck's constant. A naive application of Heisenberg's uncertainty principle indicates that these structures are not physically relevant. However, if we take the quantum chaotic system in question to be an environment which interacts with a simple two state quantum system (qubit), we show that these small phase-space structures cause the qubit to generically lose quantum coherence if and only if the environment has many degrees of freedom, such as a dilute gas. This implies that many-body environments may be crucial for the phenomenon of quantum decoherence. Next, we turn to an analysis of statistical properties of time correlation functions and matrix elements of quantum chaotic systems. A semiclassical evaluation of matrix elements of an operator indicates that the dominant contribution will be related to a classical time correlation function over the energy surface. For a highly chaotic class of dynamics, these correlation functions may be decomposed into sums of Ruelle resonances, which control exponential decay to the ergodic distribution. The theory is illustrated both numerically and theoretically on the Baker map. For this system, we are able to isolate individual Ruelle modes. We further consider dynamical systems whose approach to ergodicity is given by a power law rather than an exponential in time. We propose a billiard with diffusive boundary conditions, whose classical solution may be calculated analytically. We go on to compare the exact solution with an approximation scheme, as well calculate asympotic corrections. Quantum spectral statistics are calculated assuming the validity of the Again, Altshuler and Andreev ansatz. We find singular behavior of the two point spectral correlator in the limit of small spacing. Finally, we analyse the effect that slow decay to ergodicity has on the structure of the quantum propagator, as well as wavefunction localization. We introduce a statistical quantum description of systems that are composed of both an orderly region and a random region. By averaging over the random region only, we find that measures of localization in momentum space semiclassically diverge with the dimension of the Hilbert space. We illustrate this numerically with quantum maps and suggest various other systems where this behavior should be important.

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

PubMed Central

Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic; Busch, Marco; Dusari, Srujana; Sánchez-Barriga, Jaime; Mogilatenko, Anna; Yashina, Lada V.; Valencia, Sergio; Ünal, Akin A.; Rader, Oliver; Fischer, Saskia F.

2016-01-01

Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability. PMID:27270569

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Xia, Y.; Brault, J.; Nemoz, M.; Teisseire, M.; Vinter, B.; Leroux, M.; Chauveau, J.-M.

2011-12-01

Nonpolar (112¯0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (112¯0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

Spectrum Tunable Quantum Dot-In-A-Well Infrared Detector Arrays for Thermal Imaging

DTIC Science & Technology

2008-09-01

Spectrum tunable quantum dot-in-a- well infrared detector arrays for thermal imaging Jonathan R. Andrews1, Sergio R. Restaino1, Scott W. Teare2...Materials at the University of New Mexico has been investigating quantum dot and quantum well detectors for thermal infrared imaging applications...SEP 2008 2. REPORT TYPE 3. DATES COVERED 00-00-2008 to 00-00-2008 4. TITLE AND SUBTITLE Spectrum tunable quantum dot-in-a- well infrared

A molecular dynamics study of intramolecular proton transfer reaction of malonaldehyde in solutions based upon mixed quantum-classical approximation. I. Proton transfer reaction in water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Atsushi; Kojima, Hidekazu; Okazaki, Susumu, E-mail: okazaki@apchem.nagoya-u.ac.jp

2014-08-28

In order to investigate proton transfer reaction in solution, mixed quantum-classical molecular dynamics calculations have been carried out based on our previously proposed quantum equation of motion for the reacting system [A. Yamada and S. Okazaki, J. Chem. Phys. 128, 044507 (2008)]. Surface hopping method was applied to describe forces acting on the solvent classical degrees of freedom. In a series of our studies, quantum and solvent effects on the reaction dynamics in solutions have been analysed in detail. Here, we report our mixed quantum-classical molecular dynamics calculations for intramolecular proton transfer of malonaldehyde in water. Thermally activated proton transfermore » process, i.e., vibrational excitation in the reactant state followed by transition to the product state and vibrational relaxation in the product state, as well as tunneling reaction can be described by solving the equation of motion. Zero point energy is, of course, included, too. The quantum simulation in water has been compared with the fully classical one and the wave packet calculation in vacuum. The calculated quantum reaction rate in water was 0.70 ps{sup −1}, which is about 2.5 times faster than that in vacuum, 0.27 ps{sup −1}. This indicates that the solvent water accelerates the reaction. Further, the quantum calculation resulted in the reaction rate about 2 times faster than the fully classical calculation, which indicates that quantum effect enhances the reaction rate, too. Contribution from three reaction mechanisms, i.e., tunneling, thermal activation, and barrier vanishing reactions, is 33:46:21 in the mixed quantum-classical calculations. This clearly shows that the tunneling effect is important in the reaction.« less

Optical heterodyne accelerometry: passively stabilized, fully balanced velocity interferometer system for any reflector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttler, William T.; Lamoreaux, Steven K.

2010-08-10

We formalize the physics of an optical heterodyne accelerometer that allows measurement of low and high velocities from material surfaces under high strain. The proposed apparatus incorporates currently common optical velocimetry techniques used in shock physics, with interferometric techniques developed to self-stabilize and passively balance interferometers in quantum cryptography. The result is a robust telecom-fiber-based velocimetry system insensitive to modal and frequency dispersion that should work well in the presence of decoherent scattering processes, such as from ejecta clouds and shocked surfaces.

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

Spatial inhomogeneities in Al x Ga1-x N quantum wells induced by the surface morphology of AlN/sapphire templates

NASA Astrophysics Data System (ADS)

Zeimer, Ute; Jeschke, Joerg; Mogilatenko, Anna; Knauer, Arne; Kueller, Viola; Hoffmann, Veit; Kuhn, Christian; Simoneit, Tino; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Weyers, Markus

2015-11-01

The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for optical pumping were grown on planar c-plane AlN/sapphire as well as on thick epitaxially laterally overgrown (ELO) AlN layers on patterned AlN/sapphire. Two ELO AlN/sapphire templates were investigated, one with a miscut of the sapphire surface to the m-direction with an angle of 0.25°, the other with a miscut angle of 0.25° to the sapphire a-direction. The MQWs are studied by atomic force microscopy, plan-view cathodoluminescence (CL) at room temperature and 83 K as well as transmission electron microscopy using high-angle annular dark-field imaging and energy-dispersive x-ray spectroscopy. The results are compared to optical pumping measurements. It was found that the surface morphology of the templates determines the lateral wavelength distribution in the MQWs observed by spectral CL mappings. The lateral wavelength spread is largest for the laser structures grown on ELO AlN with miscut to sapphire a-direction caused by the local variation of the MQW thicknesses and the Ga incorporation at macrosteps on the ELO-AlN. A CL peak wavelength spread of up to 7 nm has been found. The MQWs grown on planar AlN/sapphire templates show a homogeneous wavelength distribution. However, due to the high threading dislocation density and the resulting strong nonradiative recombination, laser operation could not be achieved. The laser structures grown on ELO AlN/sapphire show optically pumped lasing with a record short wavelength of 237 nm.

Physics of frequency-modulated comb generation in quantum-well diode lasers

NASA Astrophysics Data System (ADS)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation

NASA Astrophysics Data System (ADS)

Zhou, Tong; Zhong, Zhenyang

2014-02-01

A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.

Quantum linear magnetoresistance in NbTe2

NASA Astrophysics Data System (ADS)

Chen, Hongxiang; Li, Zhilin; Fan, Xiao; Guo, Liwei; Chen, Xiaolong

2018-07-01

NbTe2 is a quasi-2D layered semimetal with charge density wave ground state showing a distorted-1T structure at room temperature. Here we report the anisotropic magneto-transport properties of NbTe2. An anomalous linear magnetoresistance up to 30% at 3 K in 9 T was observed, which can be well explained by a quantum linear magnetoresistance model. Our results reveal that a large quasi-2D Fermi surface and small Fermi pockets with linearly dispersive bands coexist in NbTe2. The comparison with the isostructural TaTe2 provides more information about the band structure evolution with charge density wave transitions in NbTe2 and TaTe2.

Material and Optical Properties of Fluorescent Carbon Quantum Dots Fabricated from Lemon Juice via Hydrothermal Reaction

NASA Astrophysics Data System (ADS)

He, Meiqin; Zhang, Jin; Wang, Hai; Kong, Yanrong; Xiao, Yiming; Xu, Wen

2018-06-01

The water-soluble fluorescent carbon quantum dots (CQDs) are synthesized by utilizing lemon juice as carbon resource via a simple hydrothermal reaction. The obtained CQDs are with an average size of 3.1 nm. They reveal uniform morphology and well-crystalline and can generate bright blue-green light emission under UV or blue light irradiation. We find that the fluorescence from these CQDs is mainly induced by the presence of oxygen-containing groups on the surface and edge of the CQDs. Moreover, we demonstrate that the as-prepared CQDs can be applied to imaging plant cells. This study is related to the fabrication, investigation, and application of newly developed carbon nanostructures.

Including Memory Friction in Single- and Two-State Quantum Dynamics Simulations.

PubMed

Brown, Paul A; Messina, Michael

2016-03-03

We present a simple computational algorithm that allows for the inclusion of memory friction in a quantum dynamics simulation of a small, quantum, primary system coupled to many atoms in the surroundings. We show how including a memory friction operator, F̂, in the primary quantum system's Hamiltonian operator builds memory friction into the dynamics of the primary quantum system. We show that, in the harmonic, semi-classical limit, this friction operator causes the classical phase-space centers of a wavepacket to evolve exactly as if it were a classical particle experiencing memory friction. We also show that this friction operator can be used to include memory friction in the quantum dynamics of an anharmonic primary system. We then generalize the algorithm so that it can be used to treat a primary quantum system that is evolving, non-adiabatically on two coupled potential energy surfaces, i.e., a model that can be used to model H atom transfer, for example. We demonstrate this approach's computational ease and flexibility by showing numerical results for both harmonic and anharmonic primary quantum systems in the single surface case. Finally, we present numerical results for a model of non-adiabatic H atom transfer between a reactant and product state that includes memory friction on one or both of the non-adiabatic potential energy surfaces and uncover some interesting dynamical effects of non-memory friction on the H atom transfer process.

A surface code quantum computer in silicon

PubMed Central

Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

2015-01-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

A surface code quantum computer in silicon.

PubMed

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

Fabrication of Circuit QED Quantum Processors, Part 1: Extensible Footprint for a Superconducting Surface Code

NASA Astrophysics Data System (ADS)

Bruno, A.; Michalak, D. J.; Poletto, S.; Clarke, J. S.; Dicarlo, L.

Large-scale quantum computation hinges on the ability to preserve and process quantum information with higher fidelity by increasing redundancy in a quantum error correction code. We present the realization of a scalable footprint for superconducting surface code based on planar circuit QED. We developed a tileable unit cell for surface code with all I/O routed vertically by means of superconducting through-silicon vias (TSVs). We address some of the challenges encountered during the fabrication and assembly of these chips, such as the quality of etch of the TSV, the uniformity of the ALD TiN coating conformal to the TSV, and the reliability of superconducting indium contact between the chips and PCB. We compare measured performance to a detailed list of specifications required for the realization of quantum fault tolerance. Our demonstration using centimeter-scale chips can accommodate the 50 qubits needed to target the experimental demonstration of small-distance logical qubits. Research funded by Intel Corporation and IARPA.

Measurement-free implementations of small-scale surface codes for quantum-dot qubits

NASA Astrophysics Data System (ADS)

Ercan, H. Ekmel; Ghosh, Joydip; Crow, Daniel; Premakumar, Vickram N.; Joynt, Robert; Friesen, Mark; Coppersmith, S. N.

2018-01-01

The performance of quantum-error-correction schemes depends sensitively on the physical realizations of the qubits and the implementations of various operations. For example, in quantum-dot spin qubits, readout is typically much slower than gate operations, and conventional surface-code implementations that rely heavily on syndrome measurements could therefore be challenging. However, fast and accurate reset of quantum-dot qubits, without readout, can be achieved via tunneling to a reservoir. Here we propose small-scale surface-code implementations for which syndrome measurements are replaced by a combination of Toffoli gates and qubit reset. For quantum-dot qubits, this enables much faster error correction than measurement-based schemes, but requires additional ancilla qubits and non-nearest-neighbor interactions. We have performed numerical simulations of two different coding schemes, obtaining error thresholds on the orders of 10-2 for a one-dimensional architecture that only corrects bit-flip errors and 10-4 for a two-dimensional architecture that corrects bit- and phase-flip errors.

Role of surface states and defects in the ultrafast nonlinear optical properties of CuS quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mary, K. A. Ann; Unnikrishnan, N. V., E-mail: nvu100@yahoo.com; Philip, Reji

2014-07-01

We report facile preparation of water dispersible CuS quantum dots (2–4 nm) and nanoparticles (5–11 nm) through a nontoxic, green, one-pot synthesis method. Optical and microstructural studies indicate the presence of surface states and defects (dislocations, stacking faults, and twins) in the quantum dots. The smaller crystallite size and quantum dot formation have significant effects on the high energy excitonic and low energy plasmonic absorption bands. Effective two-photon absorption coefficients measured using 100 fs laser pulses employing open-aperture Z-scan in the plasmonic region of 800 nm reveal that CuS quantum dots are better ultrafast optical limiters compared to CuS nanoparticles.

An extensible circuit QED architecture for quantum computation

NASA Astrophysics Data System (ADS)

Dicarlo, Leo

Realizing a logical qubit robust to single errors in its constituent physical elements is an immediate challenge for quantum information processing platforms. A longer-term challenge will be achieving quantum fault tolerance, i.e., improving logical qubit resilience by increasing redundancy in the underlying quantum error correction code (QEC). In QuTech, we target these challenges in collaboration with industrial and academic partners. I will present the circuit QED quantum hardware, room-temperature control electronics, and software components of the complete architecture. I will show the extensibility of each component to the Surface-17 and -49 circuits needed to reach the objectives with surface-code QEC, and provide an overview of latest developments. Research funded by IARPA and Intel Corporation.

Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Dinh, Duc V.; Presa, Silvino; Maaskant, Pleun P.; Corbett, Brian; Parbrook, Peter J.

2016-08-01

The exciton localization (ELZ) in polar (0001) and semipolar (112̅2) In{}0.2Ga{}0.8{{N}} multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112̅2) MQW was found to be much stronger (ELZ degree σ E ˜ 40 -70 meV) compared to the (0001) MQW (σ E ˜ 5-11 meV) that was attributed to the anisotropic growth on the (112̅2) surface. This strong ELZ was found to cause a blue-shift of the (112̅2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112̅2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.

Cyclic voltammetry as a sensitive method for in situ probing of chemical transformations in quantum dots.

PubMed

Osipovich, Nikolai P; Poznyak, Sergei K; Lesnyak, Vladimir; Gaponik, Nikolai

2016-04-21

The application of electrochemical methods for the characterization of colloidal quantum dots (QDs) attracts considerable attention as these methods may allow for monitoring of some crucial parameters, such as energetic levels of conduction and valence bands as well as surface traps and ligands under real conditions of colloidal solution. In the present work we extend the applications of cyclic voltammetry (CV) to in situ monitoring of degradation processes of water-soluble CdTe QDs. This degradation occurs under lowering of pH to the values around 5, i.e. under conditions relevant to bioimaging applications of these QDs, and is accompanied by pronounced changes of their photoluminescence. Observed correlations between characteristic features of CV diagrams and the fluorescence spectra allowed us to propose mechanisms responsible for evolution of the photoluminescence properties as well as degradation pathway of CdTe QDs at low pH.

Thermal and electrical transport in metals and superconductors across antiferromagnetic and topological quantum transitions

NASA Astrophysics Data System (ADS)

Chatterjee, Shubhayu; Sachdev, Subir; Eberlein, Andreas

2017-08-01

We study thermal and electrical transport in metals and superconductors near a quantum phase transition where antiferromagnetic order disappears. The same theory can also be applied to quantum phase transitions involving the loss of certain classes of intrinsic topological order. For a clean superconductor, we recover and extend well-known universal results. The heat conductivity for commensurate and incommensurate antiferromagnetism coexisting with superconductivity shows a markedly different doping dependence near the quantum critical point, thus allowing us to distinguish between these states. In the dirty limit, the results for the conductivities are qualitatively similar for the metal and the superconductor. In this regime, the geometric properties of the Fermi surface allow for a very good phenomenological understanding of the numerical results on the conductivities. In the simplest model, we find that the conductivities do not track the doping evolution of the Hall coefficient, in contrast to recent experimental findings. We propose a doping dependent scattering rate, possibly due to quenched short-range charge fluctuations below optimal doping, to consistently describe both the Hall data and the longitudinal conductivities.

Plasmon-Assisted Selective and Super-Resolving Excitation of Individual Quantum Emitters on a Metal Nanowire.

PubMed

Li, Qiang; Pan, Deng; Wei, Hong; Xu, Hongxing

2018-03-14

Hybrid systems composed of multiple quantum emitters coupled with plasmonic waveguides are promising building blocks for future integrated quantum nanophotonic circuits. The techniques that can super-resolve and selectively excite contiguous quantum emitters in a diffraction-limited area are of great importance for studying the plasmon-mediated interaction between quantum emitters and manipulating the single plasmon generation and propagation in plasmonic circuits. Here we show that multiple quantum dots coupled with a silver nanowire can be controllably excited by tuning the interference field of surface plasmons on the nanowire. Because of the period of the interference pattern is much smaller than the diffraction limit, we demonstrate the selective excitation of two quantum dots separated by a distance as short as 100 nm. We also numerically demonstrate a new kind of super-resolution imaging method that combines the tunable surface plasmon interference pattern on the NW with the structured illumination microscopy technique. Our work provides a novel high-resolution optical excitation and imaging method for the coupled systems of multiple quantum emitters and plasmonic waveguides, which adds a new tool for studying and manipulating single quantum emitters and single plasmons for quantum plasmonic circuitry applications.

Density-matrix simulation of small surface codes under current and projected experimental noise

NASA Astrophysics Data System (ADS)

O'Brien, T. E.; Tarasinski, B.; DiCarlo, L.

2017-09-01

We present a density-matrix simulation of the quantum memory and computing performance of the distance-3 logical qubit Surface-17, following a recently proposed quantum circuit and using experimental error parameters for transmon qubits in a planar circuit QED architecture. We use this simulation to optimize components of the QEC scheme (e.g., trading off stabilizer measurement infidelity for reduced cycle time) and to investigate the benefits of feedback harnessing the fundamental asymmetry of relaxation-dominated error in the constituent transmons. A lower-order approximate calculation extends these predictions to the distance-5 Surface-49. These results clearly indicate error rates below the fault-tolerance threshold of the surface code, and the potential for Surface-17 to perform beyond the break-even point of quantum memory. However, Surface-49 is required to surpass the break-even point of computation at state-of-the-art qubit relaxation times and readout speeds.

Comparative research on activation technique for GaAs photocathodes

NASA Astrophysics Data System (ADS)

Chen, Liang; Qian, Yunsheng; Chang, Benkang; Chen, Xinlong; Yang, Rui

2012-03-01

The properties of GaAs photocathodes mainly depend on the material design and activation technique. In early researches, high-low temperature two-step activation has been proved to get more quantum efficiency than high-temperature single-step activation. But the variations of surface barriers for two activation techniques have not been well studied, thus the best activation temperature, best Cs-O ratio and best activation time for two-step activation technique have not been well found. Because the surface photovoltage spectroscopy (SPS) before activation is only in connection with the body parameters for GaAs photocathode such as electron diffusion length and the spectral response current (SRC) after activation is in connection with not only body parameters but also surface barriers, thus the surface escape probability (SEP) can be well fitted through the comparative research between SPS before activation and SEP after activation. Through deduction for the tunneling process of surface barriers by Schrödinger equation, the width and height for surface barrier I and II can be well fitted through the curves of SEP. The fitting results were well proved and analyzed by quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (ADXPS) which can also study the surface chemical compositions, atomic concentration percentage and layer thickness for GaAs photocathodes. This comparative research method for fitting parameters of surface barriers through SPS before activation and SRC after activation shows a better real-time in system method for the researches of activation techniques.

Epitaxial Zn quantum dots coherently grown on Si(1 1 1): growth mechanism, nonlinear optical and chemical states analyses

NASA Astrophysics Data System (ADS)

Huang, Bo-Jia; Kao, Li-Chi; Brahma, Sanjaya; Jeng, Yu-En; Chiu, Shang-Jui; Ku, Ching-Shun; Lo, Kuang-Yao

2017-05-01

Oxide- and defect-free metal/semiconductor interface is important to improve Ohmic contact for the suppression of electron scattering and the avoidance of an extrinsic surface state in estimating the barrier of the Schottky contact at the nanodevice interface. This study reports the growth mechanism of Zn quantum dots coherently grown on Si(1 1 1) and the physical phenomena of the crystalline, nonlinear optics, and the chemical states of Zn quantum dots. Epitaxial Zn quantum dots were coherently formed on a non-oxide Si(1 1 1) surface through the liquid- to solid-phase transformation as a result of pattern matching between the Zn(0 0 2) and Si(1 1 1) surfaces. The growth mechanism of constrained Zn quantum dots grown through strategic magnetron radio frequency sputtering is complex. Some factors, such as substrate temperature, hydrogen gas flow, and negative DC bias, influence the configuration of epitaxial Zn quantum dots. In particular, hydrogen gas plays an important role in reducing the ZnO+ and native oxide that is bombarded by accelerated ions, thereby enhancing the Zn ion surface diffusion. The reduction reaction can be inspected by distinguishing the chemical states of ZnO/Zn quantum dots from natural oxidation or the states of Zn 3d through the analysis of x-ray absorption near the edge structure spectrum. The complex growth mechanism can be systematically understood by analyzing a noncancelled anisotropic 3 m dipole from reflective second harmonic generation and inspecting the evolution between the Zn(0 0 2) and Zn(1 1 1) peaks of the collective ZnO/Zn quantum dots in synchrotron XRD.

Relating quantum coherence and correlations with entropy-based measures.

PubMed

Wang, Xiao-Li; Yue, Qiu-Ling; Yu, Chao-Hua; Gao, Fei; Qin, Su-Juan

2017-09-21

Quantum coherence and quantum correlations are important quantum resources for quantum computation and quantum information. In this paper, using entropy-based measures, we investigate the relationships between quantum correlated coherence, which is the coherence between subsystems, and two main kinds of quantum correlations as defined by quantum discord as well as quantum entanglement. In particular, we show that quantum discord and quantum entanglement can be well characterized by quantum correlated coherence. Moreover, we prove that the entanglement measure formulated by quantum correlated coherence is lower and upper bounded by the relative entropy of entanglement and the entanglement of formation, respectively, and equal to the relative entropy of entanglement for all the maximally correlated states.

Diluted Magnetic Semiconductors for Magnetic Field Tunable Infrared Detectors

DTIC Science & Technology

2005-06-30

significantly improved performance and technological advances of quantum well infrared photodetectors (QWIPs)14 and quantum cascade lasers (QCLs)15...NUMBER FA8655-04-1-3069 5b. GRANT NUMBER 4. TITLE AND SUBTITLE Magnetic Field Tunable Terahertz Quantum Well Infrared Photodetector 5c...fabrication in II-VI materials, quantum well infrared photodetector device design and magneto-optical characterisation are all well understood

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

NASA Astrophysics Data System (ADS)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots. A TR-SHG study of these electronically-coupled quantum-dot films reveals temperature-activated cooling of hot charge carriers and coherent excitation of a previously-unidentified surface optical phonon. Finally, I report the first experimental observation of ultrafast electron transfer from the higher excited states of a colloidal quantum dot (PbSe) to delocalized conduction band states of a widely-used electron acceptor (TiO2). The electric field resulting from ultrafast (<50fs) separation of charge carriers across the PbSe/TiO2(110) interface excites coherent vibration of the TiO2 surface atoms, whose collective motions can be followed in real time.

Quantum Molecular Dynamics Simulations of Nanotube Tip Assisted Reactions

NASA Technical Reports Server (NTRS)

Menon, Madhu

1998-01-01

In this report we detail the development and application of an efficient quantum molecular dynamics computational algorithm and its application to the nanotube-tip assisted reactions on silicon and diamond surfaces. The calculations shed interesting insights into the microscopic picture of tip surface interactions.

Influence of surface plasmon resonance of Sn nanoparticles and nanosheets on the photoluminescence and Raman spectra of SnS quantum dots

NASA Astrophysics Data System (ADS)

Warrier, Anita R.; Gandhimathi, R.

2018-04-01

We report on enhancement of photoluminescence of SnS quantum dots by embedding them in a mesh of Sn nanostructures. SnS quantum dots with band gap ˜2.7 eV are embedded in a mesh of Sn nanostructures, that are synthesized from tin chloride solution using sodium borohydride as reducing agent. The synthesized Sn nanostructures have a morphology dependent, tunable surface plasmon resonance ranging from UV region (295 nm) to visible region (400 nm) of the electromagnetic spectrum. In the SnS-Sn nanohybrids, the excitons are strongly coupled with plasmons leading to a shift in the excitonic binding energy (˜ 400 meV). Due to the influence of Sn nanoparticles on the SnS quantum dots, the photoluminescence and Raman line intensity is enhanced by an order of ˜103 The enhancement is more pronounced for Sn nanosheets due to the large surface area and visible light surface plasmon resonance.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

PubMed

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

PubMed

Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

2015-06-03

Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Whispering gallery states of neutrons and anti-hydrogen atoms and their applications to fundamental and surface physics

NASA Astrophysics Data System (ADS)

Nesvizhevsky, Valery

2013-03-01

The `whispering gallery' effect has been known since ancient times for sound waves in air, later in water and more recently for a broad range of electromagnetic waves: radio, optics, Roentgen and so on. It is intensively used and explored due to its numerous crucial applications. It consists of wave localization near a curved reflecting surface and is expected for waves of various natures, for instance, for neutrons and (anti)atoms. For (anti)matter waves, it includes a new feature: a massive particle is settled in quantum states, with parameters depending on its mass. In this talk, we present the first observation of the quantum whispering-gallery effect for matter particles (cold neutrons) 1-2. This phenomenon provides an example of an exactly solvable problem analogous to the `quantum bouncer'; it is complementary to recently discovered gravitational quantum states of neutrons3. These two phenomena provide a direct demonstration of the weak equivalence principle for a massive particle in a quantum state. Deeply bound long-living states are weakly sensitive to surface potential; highly excited short-living states are very sensitive to the wall nuclear potential shape. Therefore, they are a promising tool for studying fundamental neutron-matter interactions, quantum neutron optics and surface physics effects. Analogous phenomena could be measured with atoms and anti-atoms 4-5.

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

PubMed Central

Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

2017-01-01

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used. PMID:28240254

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective.

PubMed

Giansante, Carlo; Infante, Ivan

2017-10-19

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI 3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition.

A New Ontological View of the Quantum Measurement Problem

DTIC Science & Technology

2005-06-13

broader issues in the foundations of quantum mechanics as well. In this scenario, a quantum measurement is a nonequilibrium phase transition in a...the foundations of quantum mechan - ics as well. In this scenario a quantum measurement is a non-equilibrium phase transition in a “resonant cavity...ontology, and the probabilistic element is removed from the foundations of quantum mechanics , its apparent presence in the quantum measurement being solely

Polarizability and binding energy of a shallow donor in spherical quantum dot-quantum well (QD-QW)

NASA Astrophysics Data System (ADS)

Rahmani, K.; Chrafih, Y.; M’Zred, S.; Janati, S.; Zorkani, I.; Jorio, A.; Mmadi, A.

2018-03-01

The polarizability and the binding energy is estimated for a shallow donor confined to move in inhomogeneous quantum dots (CdS/HgS/CdS). In this work, the Hass variational method within the effective mass approximation in used in the case of an infinitely deep well. The polarizability and the binding energy depend on the inner and the outer radius of the QDQW, also it depends strongly on the donor position. It’s found that the stark effect is more important when the impurity is located at the center of the (QDQW) and becomes less important when the donor moves toward the extremities of the spherical layer. When the electric field increases, the binding energy and the polarizability decreases. Its effects is more pronounced when the impurity is placed on the center of the spherical layer and decrease when the donor move toward extremities of this spherical layer. We have demonstrated the existence of a critical value {≤ft( {{{{R_1}} \\over {{R_2}}}} \\right)cri} which can be used to distinguish the tree dimension confinement from the spherical surface confinement and it’s may be important for the nanofabrication techniques.

Quantum key distribution in a multi-user network at gigahertz clock rates

NASA Astrophysics Data System (ADS)

Fernandez, Veronica; Gordon, Karen J.; Collins, Robert J.; Townsend, Paul D.; Cova, Sergio D.; Rech, Ivan; Buller, Gerald S.

2005-07-01

In recent years quantum information research has lead to the discovery of a number of remarkable new paradigms for information processing and communication. These developments include quantum cryptography schemes that offer unconditionally secure information transport guaranteed by quantum-mechanical laws. Such potentially disruptive security technologies could be of high strategic and economic value in the future. Two major issues confronting researchers in this field are the transmission range (typically <100km) and the key exchange rate, which can be as low as a few bits per second at long optical fiber distances. This paper describes further research of an approach to significantly enhance the key exchange rate in an optical fiber system at distances in the range of 1-20km. We will present results on a number of application scenarios, including point-to-point links and multi-user networks. Quantum key distribution systems have been developed, which use standard telecommunications optical fiber, and which are capable of operating at clock rates of up to 2GHz. They implement a polarization-encoded version of the B92 protocol and employ vertical-cavity surface-emitting lasers with emission wavelengths of 850 nm as weak coherent light sources, as well as silicon single-photon avalanche diodes as the single photon detectors. The point-to-point quantum key distribution system exhibited a quantum bit error rate of 1.4%, and an estimated net bit rate greater than 100,000 bits-1 for a 4.2 km transmission range.

Fluorescence quenching near small metal nanoparticles.

PubMed

Pustovit, V N; Shahbazyan, T V

2012-05-28

We develop a microscopic model for fluorescence of a molecule (or semiconductor quantum dot) near a small metal nanoparticle. When a molecule is situated close to metal surface, its fluorescence is quenched due to energy transfer to the metal. We perform quantum-mechanical calculations of energy transfer rates for nanometer-sized Au nanoparticles and find that nonlocal and quantum-size effects significantly enhance dissipation in metal as compared to those predicted by semiclassical electromagnetic models. However, the dependence of transfer rates on molecule's distance to metal nanoparticle surface, d, is significantly weaker than the d(-4) behavior for flat metal surface with a sharp boundary predicted by previous calculations within random phase approximation.

Quantum confinement effect in 6H-SiC quantum dots observed via plasmon-exciton coupling-induced defect-luminescence quenching

NASA Astrophysics Data System (ADS)

Guo, Xiaoxiao; Zhang, Yumeng; Fan, Baolu; Fan, Jiyang

2017-03-01

The quantum confinement effect is one of the crucial physical effects that discriminate a quantum material from its bulk material. It remains a mystery why the 6H-SiC quantum dots (QDs) do not exhibit an obvious quantum confinement effect. We study the photoluminescence of the coupled colloidal system of SiC QDs and Ag nanoparticles. The experimental result in conjunction with the theoretical calculation reveals that there is strong coupling between the localized electron-hole pair in the SiC QD and the localized surface plasmon in the Ag nanoparticle. It results in resonance energy transfer between them and resultant quenching of the blue surface-defect luminescence of the SiC QDs, leading to uncovering of a hidden near-UV emission band. This study shows that this emission band originates from the interband transition of the 6H-SiC QDs and it exhibits a remarkable quantum confinement effect.

In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

NASA Astrophysics Data System (ADS)

Zhang, Wei; Shi, Zhenwu; Huo, Dayun; Guo, Xiaoxiang; Zhang, Feng; Chen, Linsen; Wang, Qinhua; Zhang, Baoshun; Peng, Changsi

2018-04-01

A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.

Carrier multiplication and charge transport in artificial quantum-dot solids probed by ultrafast photocurrent spectroscopy (Conference Presentation)

NASA Astrophysics Data System (ADS)

Klimov, Victor I.

2017-05-01

Understanding and controlling carrier transport and recombination dynamics in colloidal quantum dot films is key to their application in electronic and optoelectronic devices. Towards this end, we have conducted transient photocurrent measurements to monitor transport through quantum confined band edge states in lead selenide quantum dots films as a function of pump fluence, temperature, electrical bias, and surface treatment. Room temperature dynamics reveal two distinct timescales of intra-dot geminate processes followed by non-geminate inter-dot processes. The non-geminate kinetics is well described by the recombination of holes with photoinjected and pre-existing electrons residing in mid-gap states. We find the mobility of the quantum-confined states shows no temperature dependence down to 6 K, indicating a tunneling mechanism of early time photoconductance. We present evidence of the importance of the exciton fine structure in controlling the low temperature photoconductance, whereby the nanoscale enhanced exchange interaction between electrons and holes in quantum dots introduces a barrier to charge separation. Finally, side-by-side comparison of photocurrent transients using excitation with low- and high-photon energies (1.5 vs. 3.0 eV) reveals clear signatures of carrier multiplication (CM), that is, generation of multiple excitons by single photons. Based on photocurrent measurements of quantum dot solids and optical measurements of solution based samples, we conclude that the CM efficiency is unaffected by strong inter-dot coupling. Therefore, the results of previous numerous spectroscopic CM studies conducted on dilute quantum dot suspensions should, in principle, be reproducible in electronically coupled QD films used in devices.

Polarization effects on quantum levels in InN/GaN quantum wells.

PubMed

Lin, Wei; Li, Shuping; Kang, Junyong

2009-12-02

Polarization effects on quantum states in InN/GaN quantum wells have been investigated by means of ab initio calculation and spectroscopic ellipsometry. Through the position-dependent partial densities of states, our results show that the polarization modified by the strain with different well thickness leads to an asymmetry band bending of the quantum well. The quantum levels are identified via the band structures and their square wave function distributions are analyzed by the partial charge densities. Further theoretical and experimental comparison of the imaginary part of the dielectric function show that the overall transition probability increases under larger polarization fields, which can be attributable to the fact that the excited quantum states of 2h have a greater overlap with 1e states and enhance other hole quantum states in the well by a hybridization. These results would provide a new approach to improve the transition probability and light emission by enhancing the polarization fields in a proper way.

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

PubMed Central

Holmes, Kyland; Mazur, Yuriy I; Ramsey, Kimberly A; Salamo, Gregory J

2006-01-01

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

Quantum interference in plasmonic circuits.

PubMed

Heeres, Reinier W; Kouwenhoven, Leo P; Zwiller, Valery

2013-10-01

Surface plasmon polaritons (plasmons) are a combination of light and a collective oscillation of the free electron plasma at metal/dielectric interfaces. This interaction allows subwavelength confinement of light beyond the diffraction limit inherent to dielectric structures. As a result, the intensity of the electromagnetic field is enhanced, with the possibility to increase the strength of the optical interactions between waveguides, light sources and detectors. Plasmons maintain non-classical photon statistics and preserve entanglement upon transmission through thin, patterned metallic films or weakly confining waveguides. For quantum applications, it is essential that plasmons behave as indistinguishable quantum particles. Here we report on a quantum interference experiment in a nanoscale plasmonic circuit consisting of an on-chip plasmon beamsplitter with integrated superconducting single-photon detectors to allow efficient single plasmon detection. We demonstrate a quantum-mechanical interaction between pairs of indistinguishable surface plasmons by observing Hong-Ou-Mandel (HOM) interference, a hallmark non-classical interference effect that is the basis of linear optics-based quantum computation. Our work shows that it is feasible to shrink quantum optical experiments to the nanoscale and offers a promising route towards subwavelength quantum optical networks.

High modulation bandwidth of a light-emitting diode with surface plasmon coupling (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lin, Chun-Han; Tu, Charng-Gan; Yao, Yu-Feng; Chen, Sheng-Hung; Su, Chia-Ying; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

Besides lighting, LEDs can be used for indoor data transmission. Therefore, a large modulation bandwidth becomes an important target in the development of visible LED. In this regard, enhancing the radiative recombination rate of carriers in the quantum wells of an LED is a useful method since the modulation bandwidth of an LED is related to the carrier decay rate besides the device RC time constant To increase the carrier decay rate in an LED without sacrificing its output power, the technique of surface plasmon (SP) coupling in an LED is useful. In this paper, the increases of modulation bandwidth by reducing mesa size, decreasing active layer thickness, and inducing SP coupling in blue- and green-emitting LEDs are illustrated. The results are demonstrated by comparing three different LED surface structures, including bare p-type surface, GaZnO current spreading layer, and Ag nanoparticles (NPs) for inducing SP coupling. In a single-quantum-well, blue-emitting LED with a circular mesa of 10 microns in radius, SP coupling results in a modulation bandwidth of 528.8 MHz, which is believed to be the record-high level. A smaller RC time constant can lead to a higher modulation bandwidth. However, when the RC time constant is smaller than 0.2 ns, its effect on modulation bandwidth saturates. The dependencies of modulation bandwidth on injected current density and carrier decay time confirm that the modulation bandwidth is essentially inversely proportional to a time constant, which is inversely proportional to the square-root of carrier decay rate and injected current density.

Multiharmonic Frequency-Chirped Transducers for Surface-Acoustic-Wave Optomechanics

NASA Astrophysics Data System (ADS)

Weiß, Matthias; Hörner, Andreas L.; Zallo, Eugenio; Atkinson, Paola; Rastelli, Armando; Schmidt, Oliver G.; Wixforth, Achim; Krenner, Hubert J.

2018-01-01

Wide-passband interdigital transducers are employed to establish a stable phase lock between a train of laser pulses emitted by a mode-locked laser and a surface acoustic wave generated electrically by the transducer. The transducer design is based on a multiharmonic split-finger architecture for the excitation of a fundamental surface acoustic wave and a discrete number of its overtones. Simply by introducing a variation of the transducer's periodicity p , a frequency chirp is added. This combination results in wide frequency bands for each harmonic. The transducer's conversion efficiency from the electrical to the acoustic domain is characterized optomechanically using single quantum dots acting as nanoscale pressure sensors. The ability to generate surface acoustic waves over a wide band of frequencies enables advanced acousto-optic spectroscopy using mode-locked lasers with fixed repetition rate. Stable phase locking between the electrically generated acoustic wave and the train of laser pulses is confirmed by performing stroboscopic spectroscopy on a single quantum dot at a frequency of 320 MHz. Finally, the dynamic spectral modulation of the quantum dot is directly monitored in the time domain combining stable phase-locked optical excitation and time-correlated single-photon counting. The demonstrated scheme will be particularly useful for the experimental implementation of surface-acoustic-wave-driven quantum gates of optically addressable qubits or collective quantum states or for multicomponent Fourier synthesis of tailored nanomechanical waveforms.

SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Yunae; Kim, Eunah; Gwon, Minji

2015-10-12

We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection ofmore » the nanostructured solar cells.« less

Three-Dimensional Models of Topological Insulators: Engineering of Dirac Cones and Robustness of the Spin Texture

NASA Astrophysics Data System (ADS)

Soriano, David; Ortmann, Frank; Roche, Stephan

2012-12-01

We design three-dimensional models of topological insulator thin films, showing a tunability of the odd number of Dirac cones driven by the atomic-scale geometry at the boundaries. A single Dirac cone at the Γ-point can be obtained as well as full suppression of quantum tunneling between Dirac states at geometrically differentiated surfaces. The spin texture of surface states changes from a spin-momentum-locking symmetry to a surface spin randomization upon the introduction of bulk disorder. These findings illustrate the richness of the Dirac physics emerging in thin films of topological insulators and may prove utile for engineering Dirac cones and for quantifying bulk disorder in materials with ultraclean surfaces.

Applying the Coupled-Cluster Ansatz to Solids and Surfaces in the Thermodynamic Limit

NASA Astrophysics Data System (ADS)

Gruber, Thomas; Liao, Ke; Tsatsoulis, Theodoros; Hummel, Felix; Grüneis, Andreas

2018-04-01

Modern electronic structure theories can predict and simulate a wealth of phenomena in surface science and solid-state physics. In order to allow for a direct comparison with experiment, such ab initio predictions have to be made in the thermodynamic limit, substantially increasing the computational cost of many-electron wave-function theories. Here, we present a method that achieves thermodynamic limit results for solids and surfaces using the "gold standard" coupled cluster ansatz of quantum chemistry with unprecedented efficiency. We study the energy difference between carbon diamond and graphite crystals, adsorption energies of water on h -BN, as well as the cohesive energy of the Ne solid, demonstrating the increased efficiency and accuracy of coupled cluster theory for solids and surfaces.

Ag2S Quantum Dot-Sensitized Solar Cells by First Principles: The Effect of Capping Ligands and Linkers.

PubMed

Amaya Suárez, Javier; Plata, Jose J; Márquez, Antonio M; Fernández Sanz, Javier

2017-09-28

Quantum dots solar cells, QDSCs, are one of the candidates for being a reliable alternative to fossil fuels. However, the well-studied CdSe and CdTe-based QDSCs present a variety of issues for their use in consumer-goods applications. Silver sulfide, Ag 2 S, is a promising material, but poor efficiency has been reported for QDSCs based on this compound. The potential influence of each component of QDSCs is critical and key for the development of more efficient devices based on Ag 2 S. In this work, density functional theory calculations were performed to study the nature of the optoelectronic properties for an anatase-TiO 2 (101) surface sensitized with different silver sulfide nanoclusters. We demonstrated how it is possible to deeply tune of its electronic properties by modifying the capping ligands and linkers to the surface. Finally, an analysis of the electron injection mechanism for this system is presented.

SchNet - A deep learning architecture for molecules and materials

NASA Astrophysics Data System (ADS)

Schütt, K. T.; Sauceda, H. E.; Kindermans, P.-J.; Tkatchenko, A.; Müller, K.-R.

2018-06-01

Deep learning has led to a paradigm shift in artificial intelligence, including web, text, and image search, speech recognition, as well as bioinformatics, with growing impact in chemical physics. Machine learning, in general, and deep learning, in particular, are ideally suitable for representing quantum-mechanical interactions, enabling us to model nonlinear potential-energy surfaces or enhancing the exploration of chemical compound space. Here we present the deep learning architecture SchNet that is specifically designed to model atomistic systems by making use of continuous-filter convolutional layers. We demonstrate the capabilities of SchNet by accurately predicting a range of properties across chemical space for molecules and materials, where our model learns chemically plausible embeddings of atom types across the periodic table. Finally, we employ SchNet to predict potential-energy surfaces and energy-conserving force fields for molecular dynamics simulations of small molecules and perform an exemplary study on the quantum-mechanical properties of C20-fullerene that would have been infeasible with regular ab initio molecular dynamics.

Universality of electronic friction. II. Equivalence of the quantum-classical Liouville equation approach with von Oppen's nonequilibrium Green's function methods out of equilibrium

NASA Astrophysics Data System (ADS)

Dou, Wenjie; Subotnik, Joseph E.

2018-02-01

In a recent publication [W. Dou et al., Phys. Rev. Lett. 119, 046001 (2017), 10.1103/PhysRevLett.119.046001], using the quantum-classical Liouville equation (QCLE), we derived a very general form for the electronic friction felt by a molecule moving near one or many metal surfaces. Moreover, we have already proved the equivalence of the QCLE electronic friction with the Head-Gordon-Tully model as well as a generalized version of von Oppen's nonequilibrium Green's function (NEGF) method at equilibrium [W. Dou and J. E. Subotnik, Phys. Rev. B 96, 104305 (2017), 10.1103/PhysRevB.96.104305]. In the present paper, we now further prove the equivalence between the QCLE friction and the NEGF friction for the case of multiple metal surfaces and an out-of-equilibrium electronic current without electron-electron interactions. The present results reinforce our recent claim that there is only one universal electronic friction tensor arising from the Born-Oppenheimer approximation.

Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

PubMed

Liu, Donghua; Chen, Xiaosong; Hu, Yibin; Sun, Tai; Song, Zhibo; Zheng, Yujie; Cao, Yongbin; Cai, Zhi; Cao, Min; Peng, Lan; Huang, Yuli; Du, Lei; Yang, Wuli; Chen, Gang; Wei, Dapeng; Wee, Andrew Thye Shen; Wei, Dacheng

2018-01-15

Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO 2 /Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10 -9  mol L -1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

DOE PAGES

Pica, G.; Lovett, B. W.; Bhatt, R. N.; ...

2016-01-14

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. In this work, we present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalabilitymore » issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. In conclusion, we use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.« less

Quantum dot-loaded monofunctionalized DNA icosahedra for single-particle tracking of endocytic pathways.

PubMed

Bhatia, Dhiraj; Arumugam, Senthil; Nasilowski, Michel; Joshi, Himanshu; Wunder, Christian; Chambon, Valérie; Prakash, Ved; Grazon, Chloé; Nadal, Brice; Maiti, Prabal K; Johannes, Ludger; Dubertret, Benoit; Krishnan, Yamuna

2016-12-01

Functionalization of quantum dots (QDs) with a single biomolecular tag using traditional approaches in bulk solution has met with limited success. DNA polyhedra consist of an internal void bounded by a well-defined three-dimensional structured surface. The void can house cargo and the surface can be functionalized with stoichiometric and spatial precision. Here, we show that monofunctionalized QDs can be realized by encapsulating QDs inside DNA icosahedra and functionalizing the DNA shell with an endocytic ligand. We deployed the DNA-encapsulated QDs for real-time imaging of three different endocytic ligands-folic acid, galectin-3 (Gal3) and the Shiga toxin B-subunit (STxB). Single-particle tracking of Gal3- or STxB-functionalized QD-loaded DNA icosahedra allows us to monitor compartmental dynamics along endocytic pathways. These DNA-encapsulated QDs, which bear a unique stoichiometry of endocytic ligands, represent a new class of molecular probes for quantitative imaging of endocytic receptor dynamics.

A permutationally invariant full-dimensional ab initio potential energy surface for the abstraction and exchange channels of the H + CH{sub 4} system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jun, E-mail: jli15@cqu.edu.cn, E-mail: zhangdh@dicp.ac.cn; Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87131; Chen, Jun

2015-05-28

We report a permutationally invariant global potential energy surface (PES) for the H + CH{sub 4} system based on ∼63 000 data points calculated at a high ab initio level (UCCSD(T)-F12a/AVTZ) using the recently proposed permutation invariant polynomial-neural network method. The small fitting error (5.1 meV) indicates a faithful representation of the ab initio points over a large configuration space. The rate coefficients calculated on the PES using tunneling corrected transition-state theory and quasi-classical trajectory are found to agree well with the available experimental and previous quantum dynamical results. The calculated total reaction probabilities (J{sub tot} = 0) including themore » abstraction and exchange channels using the new potential by a reduced dimensional quantum dynamic method are essentially the same as those on the Xu-Chen-Zhang PES [Chin. J. Chem. Phys. 27, 373 (2014)].« less

Ab initio quantum mechanical calculation of the reaction probability for the Cl-+PH2Cl→ClPH2+Cl- reaction

NASA Astrophysics Data System (ADS)

Farahani, Pooria; Lundberg, Marcus; Karlsson, Hans O.

2013-11-01

The SN2 substitution reactions at phosphorus play a key role in organic and biological processes. Quantum molecular dynamics simulations have been performed to study the prototype reaction Cl-+PH2Cl→ClPH2+Cl-, using one and two-dimensional models. A potential energy surface, showing an energy well for a transition complex, was generated using ab initio electronic structure calculations. The one-dimensional model is essentially reflection free, whereas the more realistic two-dimensional model displays involved resonance structures in the reaction probability. The reaction rate is almost two orders of magnitude smaller for the two-dimensional compared to the one-dimensional model. Energetic errors in the potential energy surface is estimated to affect the rate by only a factor of two. This shows that for these types of reactions it is more important to increase the dimensionality of the modeling than to increase the accuracy of the electronic structure calculation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Topp, Andreas; Queiroz, Raquel; Grüneis, Andreas

In this work, we present a model of the surface states of nonsymmorphic semimetals. These are derived from surface mass terms that lift the high degeneracy imposed in the band structure by the nonsymmorphic bulk symmetries. Reflecting the reduced symmetry at the surface, the bulk bands are strongly modified. This leads to the creation of two-dimensional floating bands, which are distinct from Shockley states, quantum well states or topologically protected surface states. We focus on the layered semimetal ZrSiS to clarify the origin of its surface states. We demonstrate an excellent agreement between DFT calculations and ARPES measurements and presentmore » an effective four-band model in which similar surface bands appear. Finally, we emphasize the role of the surface chemical potential by comparing the surface density of states in samples with and without potassium coating. Our findings can be extended to related compounds and generalized to other crystals with nonsymmorphic symmetries.« less

Near-infrared quantum dots for HER2 localization and imaging of cancer cells.

PubMed

Rizvi, Sarwat B; Rouhi, Sepideh; Taniguchi, Shohei; Yang, Shi Yu; Green, Mark; Keshtgar, Mo; Seifalian, Alexander M

2014-01-01

Quantum dots are fluorescent nanoparticles with unique photophysical properties that allow them to be used as diagnostic, therapeutic, and theranostic agents, particularly in medical and surgical oncology. Near-infrared-emitting quantum dots can be visualized in deep tissues because the biological window is transparent to these wavelengths. Their small sizes and free surface reactive groups that can be conjugated to biomolecules make them ideal probes for in vivo cancer localization, targeted chemotherapy, and image-guided cancer surgery. The human epidermal growth factor receptor 2 gene (HER2/neu) is overexpressed in 25%-30% of breast cancers. The current methods of detection for HER2 status, including immunohistochemistry and fluorescence in situ hybridization, are used ex vivo and cannot be used in vivo. In this paper, we demonstrate the application of near-infrared-emitting quantum dots for HER2 localization in fixed and live cancer cells as a first step prior to their in vivo application. Near-infrared-emitting quantum dots were characterized and their in vitro toxicity was established using three cancer cell lines, ie, HepG2, SK-BR-3 (HER2-overexpressing), and MCF7 (HER2-underexpressing). Mouse antihuman anti-HER2 monoclonal antibody was conjugated to the near-infrared-emitting quantum dots. In vitro toxicity studies showed biocompatibility of SK-BR-3 and MCF7 cell lines with near-infrared-emitting quantum dots at a concentration of 60 μg/mL after one hour and 24 hours of exposure. Near-infrared-emitting quantum dot antiHER2-antibody bioconjugates successfully localized HER2 receptors on SK-BR-3 cells. Near-infrared-emitting quantum dot bioconjugates can be used for rapid localization of HER2 receptors and can potentially be used for targeted therapy as well as image-guided surgery.

Orthopositronium study of positron-irradiation-induced surface defects in alumina powder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dauwe, C.; Mbungu-Tsumbu

1992-01-01

Three-quantum-yield measurements and orthopositronium ({ital o}-Ps)-lifetime spectrometry at low temperatures are used to study the interaction of positronium with the surface in fine powders of aluminum oxide. It is found that electron and/or positron irradiation of the specimen induces surface defects which influence the positronium in three ways: (1) A surface positroniumlike bound state is created, (2) the fraction of {ital o}-Ps escaping from the particles is slightly inhibited, and (3) the escaped {ital o}-Ps is quenched into two-quantum decay upon collisions with the surface defects. It is found that the surface Ps state is not populated at the expensemore » of the interparticle Ps. The most likely surface defects are Al{sup 2+} or Al{sup 0} due to the migration of irradiation-induced interstitials. The techniques of long-lifetime spectrometry and of three-quantum-annihilation-rate measurement could be used to study both the diffusion of bulk defects to the surfaces, and the interactions of {ital o}-Ps to surface defects.« less

Scattering of surface electrons by isolated steps versus periodic step arrays

NASA Astrophysics Data System (ADS)

Ortega, J. E.; Lobo-Checa, J.; Peschel, G.; Schirone, S.; Abd El-Fattah, Z. M.; Matena, M.; Schiller, F.; Borghetti, P.; Gambardella, P.; Mugarza, A.

2013-03-01

We investigate the scattering of electrons belonging to Shockley states of (111)-oriented noble metal surfaces using angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM). Both ARPES and STM indicate that monatomic steps on a noble metal surface may act either as strongly repulsive or highly transmissive barriers for surface electrons, depending on the coherence of the step lattice, and irrespectively of the average step spacing. By measuring curved crystal surfaces with terrace length ranging from 30 to 180 Å, we show that vicinal surfaces of Au and Ag with periodic step arrays exhibit a remarkable wave function coherence beyond 100 Å step spacings, well beyond the Fermi wavelength limit and independently of the projection of the bulk band gap on the vicinal plane. In contrast, the analysis of transmission resonances investigated by STM shows that a pair of isolated parallel steps defining a 58 Å wide terrace confines and decouples the surface state of the small terrace from that of the (111) surface. We conclude that the formation of laterally confined quantum well states in vicinal surfaces as opposed to propagating superlattice states depends on the loss of coherence driven by imperfection in the superlattice order.

Recent applications of carbon nanomaterials in fluorescence biosensing and bioimaging.

PubMed

Wen, Jia; Xu, Yongqian; Li, Hongjuan; Lu, Aiping; Sun, Shiguo

2015-07-21

Carbon-based nanomaterials as important agents for biological applications have emerged in the past few years due to their unique optical, electronic, mechanical, and chemical properties. Many of these applications rely on successful surface modifications. This review article comprises two main parts. In the first part, we briefly review the properties and surface modifications of several classes of carbon nanomaterials, mainly carbon nanotubes (CNTs), graphene and its derivatives, carbon dots (CDs) and graphene quantum dots (GQDs), as well as some other forms of carbon-based nanomaterials such as fullerene, carbon nanohorns (CNHs) and carbon nanoonions (CNOs). In the second part, we focus on the biological applications of these carbon nanomaterials, in particular their applications for fluorescence biosensing as well as bioimaging.

Quantum mechanics of a constrained particle

NASA Astrophysics Data System (ADS)

da Costa, R. C. T.

1981-04-01

The motion of a particle rigidly bounded to a surface is discussed, considering the Schrödinger equation of a free particle constrained to move, by the action of an external potential, in an infinitely thin sheet of the ordinary three-dimensional space. Contrary to what seems to be the general belief expressed in the literature, this limiting process gives a perfectly well-defined result, provided that we take some simple precautions in the definition of the potentials and wave functions. It can then be shown that the wave function splits into two parts: the normal part, which contains the infinite energies required by the uncertainty principle, and a tangent part which contains "surface potentials" depending both on the Gaussian and mean curvatures. An immediate consequence of these results is the existence of different quantum mechanical properties for two isometric surfaces, as can be seen from the bound state which appears along the edge of a folded (but not stretched) plane. The fact that this surface potential is not a bending invariant (cannot be expressed as a function of the components of the metric tensor and their derivatives) is also interesting from the more general point of view of the quantum mechanics in curved spaces, since it can never be obtained from the classical Lagrangian of an a priori constrained particle without substantial modifications in the usual quantization procedures. Similar calculations are also presented for the case of a particle bounded to a curve. The properties of the constraining spatial potential, necessary to a meaningful limiting process, are discussed in some detail, and, as expected, the resulting Schrödinger equation contains a "linear potential" which is a function of the curvature.

Quantum State-Resolved Reactive and Inelastic Scattering at Gas-Liquid and Gas-Solid Interfaces

NASA Astrophysics Data System (ADS)

Grütter, Monika; Nelson, Daniel J.; Nesbitt, David J.

2012-06-01

Quantum state-resolved reactive and inelastic scattering at gas-liquid and gas-solid interfaces has become a research field of considerable interest in recent years. The collision and reaction dynamics of internally cold gas beams from liquid or solid surfaces is governed by two main processes, impulsive scattering (IS), where the incident particles scatter in a few-collisions environment from the surface, and trapping-desorption (TD), where full equilibration to the surface temperature (T{TD}≈ T{s}) occurs prior to the particles' return to the gas phase. Impulsive scattering events, on the other hand, result in significant rotational, and to a lesser extent vibrational, excitation of the scattered molecules, which can be well-described by a Boltzmann-distribution at a temperature (T{IS}>>T{s}). The quantum-state resolved detection used here allows the disentanglement of the rotational, vibrational, and translational degrees of freedom of the scattered molecules. The two examples discussed are (i) reactive scattering of monoatomic fluorine from room-temperature ionic liquids (RTILs) and (ii) inelastic scattering of benzene from a heated (˜500 K) gold surface. In the former experiment, rovibrational states of the nascent HF beam are detected using direct infrared absorption spectroscopy, and in the latter, a resonace-enhanced multi-photon-ionization (REMPI) scheme is employed in combination with a velocity-map imaging (VMI) device, which allows the detection of different vibrational states of benzene excited during the scattering process. M. E. Saecker, S. T. Govoni, D. V. Kowalski, M. E. King and G. M. Nathanson Science 252, 1421, 1991. A. M. Zolot, W. W. Harper, B. G. Perkins, P. J. Dagdigian and D. J. Nesbitt J. Chem. Phys 125, 021101, 2006. J. R. Roscioli and D. J. Nesbitt Faraday Disc. 150, 471, 2011.

The influence of surface coating on the properties of water-soluble CdSe and CdSe/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Coto-García, Ana María; Fernández-Argüelles, María T.; Costa-Fernández, José M.; Sanz-Medel, Alfredo; Valledor, Marta; Campo, Juan C.; Ferrero, Francisco J.

2013-01-01

It is well-known that ligands coating the surface of luminescent semiconductor nanocrystals (quantum dots [QDs]) play an important role in the preparation, stability and physical properties of the colloidal QDs in both organic and aqueous media. Here we report on the synthesis and characterization of core (CdSe QDs) and core-shell structured QDs (CdSe/ZnS QDs), both of them stabilized in aqueous medium through different mechanisms of modification of their surface chemistry. The approaches evaluated for QDs transfer to aqueous media were ligand exchange and polymer coating. Experiments were performed using two typical thioalkyl acids as ligands, namely mercaptoacetic acid (QDs-MAA) and 2-mercaptoethanesulphonic acid (QDs-MES), and an amphiphilic polymer (PQDs) based on poly(maleic anhydride) functional groups. The effects of pH (buffer solution), illumination and the presence of ions in the QD environment on the spectroscopic properties of the different synthesized QDs are reported. The stability of the prepared QDs has been comparatively evaluated aimed to elucidate which surface chemistry provides the suitable properties to be employed as fluorescence labels in distinct types of applications. The experimental results and conclusions will be useful for the development of sensitive sensors or assays adopting QDs as fluorescence labels.

Electronic structure and relaxation dynamics in a superconducting topological material

DOE PAGES

Neupane, Madhab; Ishida, Yukiaki; Sankar, Raman; ...

2016-03-03

Topological superconductors host new states of quantum matter which show a pairing gap in the bulk and gapless surface states providing a platform to realize Majorana fermions. Recently, alkaline-earth metal Sr intercalated Bi2Se3 has been reported to show superconductivity with a Tc~3K and a large shielding fraction. Here we report systematic normal state electronic structure studies of Sr0.06Bi2Se3 (Tc~2.5K) by performing photoemission spectroscopy. Using angle-resolved photoemission spectroscopy (ARPES), we observe a quantum well confined two-dimensional (2D) state coexisting with a topological surface state in Sr0.06Bi2Se3. Furthermore, our time-resolved ARPES reveals the relaxation dynamics showing different decay mechanism between the excitedmore » topological surface states and the two-dimensional states. Our experimental observation is understood by considering the intra-band scattering for topological surface states and an additional electron phonon scattering for the 2D states, which is responsible for the superconductivity. Our first-principles calculations agree with the more effective scattering and a shorter lifetime of the 2D states. In conclusion, our results will be helpful in understanding low temperature superconducting states of these topological materials.« less

Viability of pyrite pulled metabolism in the ‘iron-sulfur world’ theory: Quantum chemical assessment

NASA Astrophysics Data System (ADS)

Michalkova, Andrea; Kholod, Yana; Kosenkov, Dmytro; Gorb, Leonid; Leszczynski, Jerzy

2011-04-01

The viability of pyrite-pulled metabolism in the 'iron-sulfur world' theory was assessed using a simple model of iron-nickel sulfide (Fe-Ni-S) surface and data obtained from quantum chemical calculations. We have investigated how the individual reactions in the carbon fixation cycle (carboxylic acids formation) on an Fe-Ni-S surface could have operated to produce carboxylic acids from carbon oxide and water. The proposed model cycle reveals how the individual reactions might have functioned and provides the thermodynamics of each step of the proposed pathway. The feasibility of individual reactions, as well the whole cycle was considered. The reaction of acetic acid production from CH 3SH and CO on an Fe-Ni sulfide surface was revealed to be endergonic with a few partial steps having positive Gibbs free energy. On the other hand, the pyrite formation was found to be slightly exergonic. The significance of the catalytic activity of transition metal sulfides in generation of acetic acid was shown. The Gibbs free energy values indicate that the acetic acid synthesis is unfavorable to proceed on the studied Fe-Ni-S model under simulated conditions. The importance of these results in terms of a primordial chemistry on iron-nickel sulfide surfaces is discussed.

Thermal radiation scanning tunnelling microscopy

NASA Astrophysics Data System (ADS)

de Wilde, Yannick; Formanek, Florian; Carminati, Rémi; Gralak, Boris; Lemoine, Paul-Arthur; Joulain, Karl; Mulet, Jean-Philippe; Chen, Yong; Greffet, Jean-Jacques

2006-12-01

In standard near-field scanning optical microscopy (NSOM), a subwavelength probe acts as an optical `stethoscope' to map the near field produced at the sample surface by external illumination. This technique has been applied using visible, infrared, terahertz and gigahertz radiation to illuminate the sample, providing a resolution well beyond the diffraction limit. NSOM is well suited to study surface waves such as surface plasmons or surface-phonon polaritons. Using an aperture NSOM with visible laser illumination, a near-field interference pattern around a corral structure has been observed, whose features were similar to the scanning tunnelling microscope image of the electronic waves in a quantum corral. Here we describe an infrared NSOM that operates without any external illumination: it is a near-field analogue of a night-vision camera, making use of the thermal infrared evanescent fields emitted by the surface, and behaves as an optical scanning tunnelling microscope. We therefore term this instrument a `thermal radiation scanning tunnelling microscope' (TRSTM). We show the first TRSTM images of thermally excited surface plasmons, and demonstrate spatial coherence effects in near-field thermal emission.

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

NASA Technical Reports Server (NTRS)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

ZnO nanorods for electronic and photonic device applications

NASA Astrophysics Data System (ADS)

Yi, Gyu-Chul; Yoo, Jinkyoung; Park, Won Il; Jung, Sug Woo; An, Sung Jin; Kim, H. J.; Kim, D. W.

2005-11-01

We report on catalyst-free growth of ZnO nanorods and their nano-scale electrical and optical device applications. Catalyst-free metalorganic vapor-phase epitaxy (MOVPE) enables fabrication of size-controlled high purity ZnO single crystal nanorods. Various high quality nanorod heterostructures and quantum structures based on ZnO nanorods were also prepared using the MOVPE method and characterized using scanning electron microscopy, transmission electron microscopy, and optical spectroscopy. From the photoluminescence spectra of ZnO/Zn 0.8Mg 0.2O nanorod multi-quantum-well structures, in particular, we observed a systematic blue-shift in their PL peak position due to quantum confinement effect of carriers in nanorod quantum structures. For ZnO/ZnMgO coaxial nanorod heterostructures, photoluminescence intensity was significantly increased presumably due to surface passivation and carrier confinement. In addition to the growth and characterizations of ZnO nanorods and their quantum structures, we fabricated nanoscale electronic devices based on ZnO nanorods. We report on fabrication and device characteristics of metal-oxidesemiconductor field effect transistors (MOSFETs), Schottky diodes, and metal-semiconductor field effect transistors (MESFETs) as examples of the nanodevices. In addition, electroluminescent devices were fabricated using vertically aligned ZnO nanorods grown p-type GaN substrates, exhibiting strong visible electroluminescence.

Decodoku: Quantum error rorrection as a simple puzzle game

NASA Astrophysics Data System (ADS)

Wootton, James

To build quantum computers, we need to detect and manage any noise that occurs. This will be done using quantum error correction. At the hardware level, QEC is a multipartite system that stores information non-locally. Certain measurements are made which do not disturb the stored information, but which do allow signatures of errors to be detected. Then there is a software problem. How to take these measurement outcomes and determine: a) The errors that caused them, and (b) how to remove their effects. For qubit error correction, the algorithms required to do this are well known. For qudits, however, current methods are far from optimal. We consider the error correction problem of qubit surface codes. At the most basic level, this is a problem that can be expressed in terms of a grid of numbers. Using this fact, we take the inherent problem at the heart of quantum error correction, remove it from its quantum context, and presented in terms of simple grid based puzzle games. We have developed three versions of these puzzle games, focussing on different aspects of the required algorithms. These have been presented and iOS and Android apps, allowing the public to try their hand at developing good algorithms to solve the puzzles. For more information, see www.decodoku.com. Funding from the NCCR QSIT.

Quantum Regime of a Two-Dimensional Phonon Cavity

NASA Astrophysics Data System (ADS)

Bolgar, Aleksey N.; Zotova, Julia I.; Kirichenko, Daniil D.; Besedin, Ilia S.; Semenov, Aleksander V.; Shaikhaidarov, Rais S.; Astafiev, Oleg V.

2018-06-01

We realize the quantum regime of a surface acoustic wave (SAW) resonator by demonstrating vacuum Rabi mode splitting due to interaction with a superconducting artificial atom. Reaching the quantum regime is physically difficult and technologically challenging since SAW devices consist of large arrays of narrow metal strips. This work paves the way for realizing analogues of quantum optical phenomena with phonons and can be useful in on-chip quantum electronics.

The interactions between CdSe quantum dots and yeast Saccharomyces cerevisiae: adhesion of quantum dots to the cell surface and the protection effect of ZnS shell.

PubMed

Mei, Jie; Yang, Li-Yun; Lai, Lu; Xu, Zi-Qiang; Wang, Can; Zhao, Jie; Jin, Jian-Cheng; Jiang, Feng-Lei; Liu, Yi

2014-10-01

The interactions between quantum dots (QDs) and biological systems have attracted increasing attention due to concerns on possible toxicity of the nanoscale materials. The biological effects of CdSe QDs and CdSe/ZnS QDs with nearly identical hydrodynamic size on Saccharomyces cerevisiae were investigated via microcalorimetric, spectroscopic and microscopic methods, demonstrating a toxic order CdSe>CdSe/ZnS QDs. CdSe QDs damaged yeast cell wall and reduced the mitochondrial membrane potential. Noteworthy, adhesion of QDs to the yeast cell surface renders this work a good example of interaction site at cell surface, and the epitaxial coating of ZnS could greatly reduce the toxicity of Cd-containing QDs. These results will contribute to the safety evaluation of quantum dots, and provide valuable information for design of nanomaterials. Copyright © 2014 Elsevier Ltd. All rights reserved.

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective

PubMed Central

2017-01-01

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition. PMID:28972763

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-06-20

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements duringmore » the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In 0.32Ga 0.68AsP/In 0.49Ga 0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. As a result, a 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.« less

Repulsive Casimir-Polder potential by a negative reflecting surface

NASA Astrophysics Data System (ADS)

Yuan, Qi-Zhang

2015-07-01

We present a scheme to generate an all-range long repulsive Casimir-Polder potential between a perfect negative reflecting surface and a ground-state atom. The repulsive potential is stable and does not decay with time. The Casimir-Polder potential is proportional to z-2 at short atom-surface distances and to z-4 at long atom-surface distances. Because of these advantages, this potential can help in building quantum reflectors, quantum levitating devices, and waveguides for matter waves.

Hybrid quantum processors: molecular ensembles as quantum memory for solid state circuits.

PubMed

Rabl, P; DeMille, D; Doyle, J M; Lukin, M D; Schoelkopf, R J; Zoller, P

2006-07-21

We investigate a hybrid quantum circuit where ensembles of cold polar molecules serve as long-lived quantum memories and optical interfaces for solid state quantum processors. The quantum memory realized by collective spin states (ensemble qubit) is coupled to a high-Q stripline cavity via microwave Raman processes. We show that, for convenient trap-surface distances of a few microm, strong coupling between the cavity and ensemble qubit can be achieved. We discuss basic quantum information protocols, including a swap from the cavity photon bus to the molecular quantum memory, and a deterministic two qubit gate. Finally, we investigate coherence properties of molecular ensemble quantum bits.

The application of signal detection theory to optics

NASA Technical Reports Server (NTRS)

Helstrom, C. W.

1972-01-01

The role of measurements of noncommuting quantum observables is considered in the detection of signals and estimation of signal parameters by quantum receivers. The restoration of images focused on a photosensitive surface is discussed for data as numbers of photoelectrons ejected from various parts of the surface. The detection of an image formed on a photosensitive surface in the presence of background illumination for similar data is also considered.

GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

DTIC Science & Technology

2003-12-03

of Leeds as follows: The contractor will design, fabricate, and analyze Quantum Well Infrared Photodetectors (QWIP) that detect in the 2-6 micron...SUBJECT TERMS EOARD, Sensor Technology, infrared technology, Gallium Nitride, Quantum Well Devices 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...resulting from these collaborations are the first quantum well infrared photodetectors based in the GaN material system to be reported. 1 1. In accordance

Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence

NASA Astrophysics Data System (ADS)

Wen, Pengyan; Liu, Jianping; Zhang, Shuming; Zhang, Liqun; Ikeda, Masao; Li, Deyao; Tian, Aiqin; Zhang, Feng; Cheng, Yang; Zhou, Wei; Yang, Hui

2017-11-01

The temperature, power, and voltage dependent photoluminescence spectra are studied in InGaN/GaN double quantum well blue laser diodes. Emissions from the two quantum wells can be distinguished at low temperature at low excitation power density due to the different built-in electric field in the two quantum wells. This finding is utilized to study the degradation of InGaN/GaN blue laser diodes. Two peaks are observed for the non-aged laser diode (LD), while one peak for the aged LD which performed 3200 h until no laser output is detected. The disappearance of the high energy peak in the photoluminescence spectra indicates a heavier degradation of the quantum well on the p-side, which agrees with our previous observation that both the linewidth and the potential fluctuation of InGaN quantum wells (QWs) reduced for the aged LDs.

Hydrazinonicotinamide prolongs quantum dot circulation and reduces reticuloendothelial system clearance by suppressing opsonization and phagocyte engulfment

NASA Astrophysics Data System (ADS)

Jung, Kyung-Ho; Park, Jin Won; Paik, Jin-Young; Lee, Eun Jeong; Choe, Yearn Seong; Lee, Kyung-Han

2012-12-01

In this study, we investigated the effects of hydrazinonicotinamide (HYNIC)—a bifunctional crosslinker widely used to 99mTc radiolabel protein and nanoparticles for imaging studies—on quantum dot opsonization, macrophage engulfment and in vivo kinetics. In streptavidin-coated quantum dots (SA-QDots), conjugation with HYNIC increased the net negative charge without affecting the zeta potential. Confocal microscopy and fluorescence-activated cell sorting showed HYNIC attachment to suppress SA-QDot engulfment by macrophages. Furthermore, HYNIC conjugation suppressed surface opsonization by serum protein including IgG. When intravenously injected into mice, HYNIC conjugation significantly prolonged the circulation of SA-QDots and reduced their hepatosplenic uptake. Diminished reticuloendothelial system clearance of SA-QDots and aminoPEG-QDots by HYNIC conjugation was also demonstrated by in vivo and ex vivo optical imaging. The effects of HYNIC on the opsonization, phagocytosis and in vivo kinetics of quantum dots were reversed by removal of the hydrazine component from HYNIC. Thus, surface functionalization with HYNIC can improve the in vivo kinetics of quantum dots by reducing phagocytosis via suppression of surface opsonization.

Structural investigation of Langmuir and Langmuir-Blodgett monolayers of semifluorinated alkanes.

PubMed

Dynarowicz Łatka, Patrycja; Pérez-Morales, Marta; Muñoz, Eulogia; Broniatowski, Marcin; Martín-Romero, María T; Camacho, Luis

2006-03-30

The behavior of a semi-fluorinated alkane (C(10)F(21)C(19)H(39)) has been studied at the air-water interface by using surface pressure and surface potential-area isotherms as well as infrared spectroscopy for the Langmuir-Blodgett films. In addition, based on the quantum chemical PM3 semiempirical approach, the dimer structure was investigated, and the double helix was found to be the most stable conformation of the dimer. The obtained results allow us to imply that the phase transition observed in the course of the surface pressure/area isotherm is due to a conformational change originating from the double helix to a vertical, single helix configuration.

Nanoscale visualization of electronic properties of AlxGa1-xN/AlyGa1-yN multiple quantum-well heterostructure by spreading resistance microscopy

NASA Astrophysics Data System (ADS)

Sviridov, D. E.; Kozlovsky, V. I.; Rong, X.; Chen, G.; Wang, X.; Jmerik, V. N.; Kirilenko, D. A.; Ivanov, S. V.

2017-01-01

Cross-sectional spreading resistance microscopy has been used to investigate nanoscale variations in electronic properties of an undoped Al0.75Ga0.25N/Al0.95Ga0.05N multiple quantum well (MQW) heterostructure grown by plasma-assisted molecular beam epitaxy on an AlN/c-sapphire template, prepared by metalorganic vapor phase epitaxy. It is found that a current signal from the MQWs can be detected only at a negative sample bias. Moreover, its value changes periodically from one quantum well (QW) to another. Analysis of the current-voltage characteristics of the contacts of a tip with the structure layers showed that periodic contrast of MQWs is the result of fluctuations of the chemical composition of the QWs and the concentration of electrons accumulated in them. Mathematical simulations indicate that this modulation is associated with the periodic fluctuations of an Al-mole fraction in the barrier layers of the structure due to counter gradients of the intensity of Al and Ga molecular fluxes across the surface of a substrate rotating slowly during growth. The nanoscale fluctuations of the current contrast observed along the QW layers are caused, most likely, by the presence of the areas of lateral carrier localization, which originate during the formation of QWs by sub-monolayer digital alloying technique.

The Photon Shell Game and the Quantum von Neumann Architecture with Superconducting Circuits

NASA Astrophysics Data System (ADS)

Mariantoni, Matteo

2012-02-01

Superconducting quantum circuits have made significant advances over the past decade, allowing more complex and integrated circuits that perform with good fidelity. We have recently implemented a machine comprising seven quantum channels, with three superconducting resonators, two phase qubits, and two zeroing registers. I will explain the design and operation of this machine, first showing how a single microwave photon | 1 > can be prepared in one resonator and coherently transferred between the three resonators. I will also show how more exotic states such as double photon states | 2 > and superposition states | 0 >+ | 1 > can be shuffled among the resonators as well [1]. I will then demonstrate how this machine can be used as the quantum-mechanical analog of the von Neumann computer architecture, which for a classical computer comprises a central processing unit and a memory holding both instructions and data. The quantum version comprises a quantum central processing unit (quCPU) that exchanges data with a quantum random-access memory (quRAM) integrated on one chip, with instructions stored on a classical computer. I will also present a proof-of-concept demonstration of a code that involves all seven quantum elements: (1), Preparing an entangled state in the quCPU, (2), writing it to the quRAM, (3), preparing a second state in the quCPU, (4), zeroing it, and, (5), reading out the first state stored in the quRAM [2]. Finally, I will demonstrate that the quantum von Neumann machine provides one unit cell of a two-dimensional qubit-resonator array that can be used for surface code quantum computing. This will allow the realization of a scalable, fault-tolerant quantum processor with the most forgiving error rates to date. [4pt] [1] M. Mariantoni et al., Nature Physics 7, 287-293 (2011.)[0pt] [2] M. Mariantoni et al., Science 334, 61-65 (2011).