Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Kim, Jae H.

1992-01-01

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Shang, C. Y.; Feng, Y.; Yan, C. L.; Zhao, Y. J.; Wang, Y. X.; Wang, X. H.; Liu, G. J.

2011-02-01

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Y.J.; Dziura, T.G.; Wang, S.C.

1990-05-07

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

NASA Astrophysics Data System (ADS)

Yang, Ying Jay; Dziura, Thaddeus G.; Wang, S. C.; Hsin, Wei; Wang, Shyh

1990-05-01

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2-0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2-4 μm diameter active region formed by chemical selective etching, and sandwiched between two Al0.05Ga0.95 As/ Al0.53Ga0.47 As distributed Bragg reflectors of very high reflectivity (98-99%) grown by metalorganic chemical vapor deposition.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-03-14

The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.

Experimental Investigation and Computer Modeling of Optical Switching in Distributed Bragg Reflector and Vertical Cavity Surface Emitting Laser Structures.

DTIC Science & Technology

1995-12-01

of a Molecular Beam Epitaxy (MBE) system prior to growing a Vertical Cavity Surface Emitting Laser ( VCSEL ). VCSEL bistability is discussed later in...addition, optical bistability 1 in the reflectivity of a DBR, as well as in the lasing power, wavelength, and beam divergence of a lasing VCSEL are...Spectral Reflectivity of AlGaAs/AlAs VCSEL Top DBR Mirror Cavity Bottom DBR Mirror Substrate Output Beam Resonance Pump Minimum Stop Band Figure 2. VCSEL

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources

NASA Astrophysics Data System (ADS)

Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro; Isu, Toshiro

2017-11-01

Two-color surface-emitting lasers were fabricated using a GaAs-based coupled multilayer cavity structure grown by molecular beam epitaxy. InGaAs/GaAs multiple quantum wells were introduced only in the upper cavity for two-mode emission in the near-infrared region. Two-color lasing of the device was successfully demonstrated under pulsed current operations at room temperature. We also observed good temporal coherence of the two-color laser light using a Michelson interferometer. A coherent terahertz source is expected when a wafer-bonded coupled cavity consisting of (0 0 1) and non-(0 0 1) epitaxial films is used for the two-color laser device, in which the difference-frequency generation can be enabled by the second-order nonlinear response in the lower cavity.

Cherenkov emission of terahertz surface plasmon polaritons from a superluminal optical spot on a structured metal surface.

PubMed

Bakunov, M I; Tsarev, M V; Hangyo, M

2009-05-25

We propose to launch terahertz surface plasmon polaritons on a structured metal surface by using a femtosecond laser pulse obliquely incident on a strip of an electro-optic material deposited on the surface. The laser pulse creates a nonlinear polarization that moves along the strip with a superluminal velocity and emits surface terahertz waves via the Cherenkov radiation mechanism. We calculate the radiated fields and frequency distribution of the radiated energy for a grooved perfect-conductor surface with a GaAs strip illuminated by Ti:sapphire laser. This technique can be used to perform surface terahertz spectroscopy.

Linearly Polarized Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser (Postprint)

DTIC Science & Technology

2007-03-01

Lamb, Jr., Laser Physics Addison-Wesley, Reading, MA, 1974, pp. 125-126. 7A. E. Siegman , Lasers University Sciences Books, Sausalito, CA, 1986, pp...AFRL-RY-WP-TP-2008-1171 LINEARLY POLARIZED DUAL-WAVELENGTH VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING LASER (Postprint) Li Fan, Mahmoud...LINEARLY POLARIZED DUAL-WAVELENGTH VERTICAL-EXTERNAL- CAVITY SURFACE-EMITTING LASER (Postprint) 5a. CONTRACT NUMBER IN-HOUSE 5b. GRANT NUMBER 5c

Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

PubMed Central

Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

2014-01-01

We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1994-04-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. In this program, we concentrated on novel epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays.

Spatial Light Modulators with Arbitrary Quantum Well Profiles

DTIC Science & Technology

1991-01-14

vertical cavity surface emitting lasers ( VCSEL ) is also...aDlications stemming from the research effort. An application of the MBE compositional grading technique to vertical cavity surface emitting lasers was described in section 2e. G. Other statements ... cavity surface emitting laser ( VCSEL ). This uses compositionally graded Bragg reflectors to reduce the electrical resistance of the mirrors

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Wang, Yang; Song, Hai-Ying; Liu, H. Y.; Liu, Shi-Bing

2017-07-01

We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Self-localized structures in vertical-cavity surface-emitting lasers with external feedback.

PubMed

Paulau, P V; Gomila, D; Ackemann, T; Loiko, N A; Firth, W J

2008-07-01

In this paper, we analyze a model of broad area vertical-cavity surface-emitting lasers subjected to frequency-selective optical feedback. In particular, we analyze the spatio-temporal regimes arising above threshold and the existence and dynamical properties of cavity solitons. We build the bifurcation diagram of stationary self-localized states, finding that branches of cavity solitons emerge from the degenerate Hopf bifurcations marking the homogeneous solutions with maximal and minimal gain. These branches collide in a saddle-node bifurcation, defining a maximum pump current for soliton existence that lies below the threshold of the laser without feedback. The properties of these cavity solitons are in good agreement with those observed in recent experiments.

AlGaAs phased array laser for optical communications

NASA Technical Reports Server (NTRS)

Carlson, N. W.

1989-01-01

Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to 500 mW) while maintaining a diffraction limited, single lobed output beam. Indeed, although the diffraction limit was achieved in this type of device, it was at low powers and in the double lobed radiation pattern characteristic of out-of-phase coupling. Grating surface emitting (GSE) arrays were, therefore, investigated with more promising results. The incorporation of second order gratings in distribute Bragg reflector (DBR) structures allows surface emission, and can be configured to allow injection locking and lateral coupling to populate 2-D arrays that should be able to reach power levels commensurate with the needs of high performance, free space optical communications levels. Also, a new amplitude modulation scheme was developed for GSE array operation.

Theory of the mode stabilization mechanism in concave-micromirror-capped vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Park, Si-Hyun; Park, Yeonsang; Jeon, Heonsu

2003-08-01

We have investigated theoretically the transverse mode stabilization mechanism in oxide-confined concave-micromirror-capped vertical-cavity surface-emitting lasers (CMC-VCSELs) as reported by Park et al. [Appl. Phys. Lett. 80, 183 (2002)]. From detailed numerical calculations on a model CMC-VCSEL structure, we found that mode discrimination factors appear to be periodic in the micromirror layer thickness with a periodicity of λ/2. We also found that there are two possible concave micromirror structures for the fundamental transverse mode laser operation. These structures can be grouped according to the thickness of the concave micromirror layer: whether it is an integer or a half-integer multiple of λ/2. The optimal micromirror curvature radius differs accordingly for each case. In an optimally designed CMC-VCSEL model structure, the fundamental transverse mode can be favored as much as 4, 8, and 13 times more strongly than the first, second, and third excited modes, respectively.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

NASA Astrophysics Data System (ADS)

Mizutani, Mitsuhiro; Teramae, Fumiharu; Takeuchi, Kazutaka; Murase, Tatsunori; Naritsuka, Shigeya; Maruyama, Takahiro

2006-04-01

A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.

Progress and issues for high-speed vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lear, Kevin L.; Al-Omari, Ahmad N.

2007-02-01

Extrinsic electrical, thermal, and optical issues rather than intrinsic factors currently constrain the maximum bandwidth of directly modulated vertical cavity surface emitting lasers (VCSELs). Intrinsic limits based on resonance frequency, damping, and K-factor analysis are summarized. Previous reports are used to compare parasitic circuit values and electrical 3dB bandwidths and thermal resistances. A correlation between multimode operation and junction heating with bandwidth saturation is presented. The extrinsic factors motivate modified bottom-emitting structures with no electrical pads, small mesas, copper plated heatsinks, and uniform current injection. Selected results on high speed quantum well and quantum dot VCSELs at 850 nm, 980 nm, and 1070 nm are reviewed including small-signal 3dB frequencies up to 21.5 GHz and bit rates up to 30 Gb/s.

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

DOEpatents

Bryan, R.P.; Esherick, P.; Jewell, J.L.; Lear, K.L.; Olbright, G.R.

1997-04-29

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications. 9 figs.

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

DOEpatents

Bryan, Robert P.; Esherick, Peter; Jewell, Jack L.; Lear, Kevin L.; Olbright, Gregory R.

1997-01-01

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Surface emitting ring quantum cascade lasers for chemical sensing

NASA Astrophysics Data System (ADS)

Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

2018-01-01

We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

Solar thermophotovoltaic system using nanostructures.

PubMed

Ungaro, Craig; Gray, Stephen K; Gupta, Mool C

2015-09-21

This paper presents results on a highly efficient experimental solar thermophotovoltaic (STPV) system using simulated solar energy. An overall power conversion efficiency of 6.2% was recorded under solar simulation. This was matched with a thermodynamic model, and the losses within the system, as well as a path forward to mitigate these losses, have been investigated. The system consists of a planar, tungsten absorbing/emitting structure with an anti-reflection layer coated laser-microtextured absorbing surface and single-layer dielectric coated emitting surface. A GaSb PV cell was used to capture the emitted radiation and convert it into electrical energy. This simple structure is both easy to fabricate and temperature stable, and contains no moving parts or heat exchange fluids.

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch

2014-04-07

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of themore » top p-GaN layer and the active region, respectively.« less

Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

NASA Astrophysics Data System (ADS)

Popescu, C.; Dorcioman, G.; Bita, B.; Besleaga, C.; Zgura, I.; Himcinschi, C.; Popescu, A. C.

2016-12-01

Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

MBE growth of VCSELs for high volume applications

NASA Astrophysics Data System (ADS)

Jäger, Roland; Riedl, Michael C.

2011-05-01

Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

Low Threshold Voltage Continuous Wave Vertical-Cavity Surface-Emitting Lasers

DTIC Science & Technology

1993-04-26

Data are presented demonstrating a design and fabrication process for the realization of low- threshold , high-output vertical-cavity surface-emitting...layers), the low series resistance of the design results in a bias voltage on o 1.8 V at a threshold current of 1.9 mA for 10-micrometer-diam devices.... Vertical-cavity surface-emitting lasers.

Surface-emitting terahertz quantum cascade lasers with continuous-wave power in the tens of milliwatt range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Gangyi, E-mail: gangyi.xu@mail.sitp.ac.cn; Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Li, Lianhe

2014-03-03

We demonstrate efficient surface-emitting terahertz frequency quantum cascade lasers with continuous wave output powers of 20–25 mW at 15 K and maximum operating temperatures of 80–85 K. The devices employ a resonant-phonon depopulation active region design with injector, and surface emission is realized using resonators based on graded photonic heterostructures (GPHs). GPHs can be regarded as energy wells for photons and have recently been implemented through grading the period of the photonic structure. In this paper, we show that it is possible to keep the period constant and grade instead the lateral metal coverage across the GPH. This strategy ensures spectrally single-mode operationmore » across the whole laser dynamic range and represents an additional degree of freedom in the design of confining potentials for photons.« less

Surface-emitting mid-infrared quantum cascade lasers with high-contrast photonic crystal resonators.

PubMed

Xu, Gangyi; Colombelli, Raffaele; Braive, Remy; Beaudoin, Gregoire; Le Gratiet, Luc; Talneau, Anne; Ferlazzo, Laurence; Sagnes, Isabelle

2010-05-24

We have developed surface-emitting single-mode quantum cascade lasers which employ high-contrast photonic-crystal resonators. The devices operate on band-edge states of the photonic band-structure. The mode profile and polarization characteristics of the band-edge modes are calculated by three-dimensional finite-difference time-domain simulation. Experimentally, the spectral properties, the far-field patterns, and the polarization characteristics of the lasers are determined and compared with simulations. The good agreement between the simulations and the experiments confirms that the hexapolar mode at the Gamma-point band-edge gives rise to lasing. By using a novel and advanced fabrication method, deep and vertical PhC holes are fabricated with no metal redeposition on the sidewalls, which improves the laser performance with respect to the current status. The angular of the output beam is approximately 15 masculine, and the side mode suppression ratio of the single mode emission is about 25 dB. The threshold current density at 78 K and the maximum operation temperature are 7.6 kA/cm2 and 220 K, respectively. The performance is mainly limited by the loss induced by surface plasmon waveguide, which can be overcome by using an optimized dielectric waveguide structure.

Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power

NASA Astrophysics Data System (ADS)

Wang, Yufei; Qu, Hongwei; Zhou, Wenjun; Jiang, Bin; Zhang, Jianxin; Qi, Aiyi; Liu, Lei; Fu, Feiya; Zheng, Wanhua

2012-03-01

The Bragg diffraction condition of surface-emitting lasing action is analyzed and Γ2-1 mode is chosen for lasing. Two types of lateral cavity photonic crystal surface emitting lasers (LC-PCSELs) based on the PhC band edge mode lateral resonance and vertical emission to achieve electrically driven surface emitting laser without distributed Bragg reflectors in the long wavelength optical communication band are designed and fabricated. Deep etching techniques, which rely on the active layer being or not etched through, are adopted to realize the LC-PCSELs on the commercial AlGaInAs/InP multi-quantum-well (MQW) epitaxial wafer. 1553.8 nm with ultralow threshold of 667 A/cm2 and 1575 nm with large power of 1.8 mW surface emitting lasing actions are observed at room temperature, providing potential values for mass production with low cost of electrically driven PCSELs.

Photopumped infrared vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Hadji, E.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

1996-04-01

The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K.

High-power green and blue electron-beam pumped surface-emitting lasers using dielectric and epitaxial distributed Bragg reflectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, T., E-mail: tklein@ifp.uni-bremen.de; Klembt, S.; Institut Néel, Université Grenoble Alpes and CNRS, B.P. 166, 38042 Grenoble

2015-03-21

ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue)more » is achieved, respectively.« less

Molecular beam epitaxy of lead salt-based vertical cavity surface emitting lasers for the 4-6 μm spectral region

NASA Astrophysics Data System (ADS)

Springholz, G.; Schwarzl, T.; Heiß, W.; Aigle, M.; Pascher, H.

2001-07-01

IV-VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4-6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1- xEu xTe as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1- xEu xTe layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1- xEu xTe ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Solar thermophotovoltaic system using nanostructures

DOE PAGES

Ungaro, Craig; Gray, Stephen K.; Gupta, Mool C.

2015-08-20

This paper presents results on a highly efficient experimental solar thermophotovoltaic (STPV) system using simulated solar energy. An overall power conversion efficiency of 6.2% was recorded under solar simulation. This was matched with a thermodynamic model, and the losses within the system, as well as a path forward to mitigate these losses, have been investigated. The system consists of a planar, tungsten absorbing/emitting structure with an anti-reflection layer coated laser-microtextured absorbing surface and single-layer dielectric coated emitting surface. A GaSb PV cell was used to capture the emitted radiation and convert it into electrical energy. This simple structure is bothmore » easy to fabricate and temperature stable, and contains no moving parts or heat exchange fluids.« less

Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

NASA Astrophysics Data System (ADS)

Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

2018-05-01

Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

Laser-induced fine structures on silicon exposed to THz-FEL

NASA Astrophysics Data System (ADS)

Irizawa, Akinori; Suga, Shigemasa; Nagashima, Takeshi; Higashiya, Atsushi; Hashida, Masaki; Sakabe, Shuji

2017-12-01

We found the irradiation of focused linearly polarized terahertz (THz)-waves emitted from THz free-electron laser (THz-FEL) engraved fine periodic stripe structures on the surfaces of single-crystal Si wafers. The experiments were performed at several wavelengths ranging from 50 to 82 μm with a macro-pulse fluence up to 32 J/cm2. The engraved structures are considered equivalent to the laser-induced periodic surface structures (LIPSS) produced by the irradiation of a femtosecond (fs)-pulsed laser in the near-infrared (NIR) region. However, the minimum period of ˜1/25 of the wavelength in the present case of THz-FEL is surely much smaller than those reported so far by use of fs-lasers and no more explicable by the so far proposed mechanisms. The finer LIPSS confirmed by longer-wavelength laser excitation by means of THz-FEL motivates investigation into the universal mechanism of LIPSS formation, which has been under a hot debate for decades.

Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon (Open Access Publisher’s Version)

DTIC Science & Technology

2016-01-04

Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon Article in Scientific Reports · January 2016 DOI : 10.1038/srep18860 CITATIONS 5 READS...1Scientific RepoRts | 6:18860 | DOI : 10.1038/srep18860 www.nature.com/scientificreports Printed Large-Area Single-Mode Photonic Crystal Bandedge...bandgap group III-V materials on Si1,4–11 through wafer bonding, printing, and direct-growth. Most lasers demonstrated so far are edge-emitting

Transverse Mode Dynamics and Ultrafast Modulation of Vertical-Cavity Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

2002-01-01

We show that multiple transverse mode dynamics of VCSELs (Vertical-Cavity Surface-Emitting Lasers) can be utilized to generate ultrafast intensity modulation at a frequency over 100 GHz, much higher than the relaxation oscillation frequency. Such multimode beating can be greatly enhanced by taking laser output from part of the output facet.

Mid-infrared surface transmitting and detecting quantum cascade device for gas-sensing

PubMed Central

Harrer, Andreas; Szedlak, Rolf; Schwarz, Benedikt; Moser, Harald; Zederbauer, Tobias; MacFarland, Donald; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Lendl, Bernhard; Strasser, Gottfried

2016-01-01

We present a bi-functional surface emitting and surface detecting mid-infrared device applicable for gas-sensing. A distributed feedback ring quantum cascade laser is monolithically integrated with a detector structured from a bi-functional material for same frequency lasing and detection. The emitted single mode radiation is collimated, back reflected by a flat mirror and detected by the detector element of the sensor. The surface operation mode combined with the low divergence emission of the ring quantum cascade laser enables for long analyte interaction regions spatially separated from the sample surface. The device enables for sensing of gaseous analytes which requires a relatively long interaction region. Our design is suitable for 2D array integration with multiple emission and detection frequencies. Proof of principle measurements with isobutane (2-methylpropane) and propane as gaseous analytes were conducted. Detectable concentration values of 0–70% for propane and 0–90% for isobutane were reached at a laser operation wavelength of 6.5 μm utilizing a 10 cm gas cell in double pass configuration. PMID:26887891

Traveling wave electrode design of electro-optically modulated coupled-cavity surface-emitting lasers.

PubMed

Zujewski, Mateusz; Thienpont, Hugo; Panajotov, Krassimir

2012-11-19

We present a novel design of an electro-optically modulated coupled-cavity vertical-cavity surface-emitting laser (CC-VCSEL) with traveling wave electrodes of the modulator cavity, which allows to overcome the RC time constant of a traditional lumped electrode structures. The CC-VCSEL optical design is based on longitudinal mode switching which has recently experimentally demonstrated a record modulation speed. We carry out segmented transmission line electrical design of the modulator cavity in order to compensate for the low impedance of the modulator section and to match the 50 Ω electrical network. We have optimized two types of highly efficient modulator structures reaching -3 dB electrical cut-off frequency of f(cut-off) = 330 GHz with maximum reflection of -22 dB in the range from f(LF) = 100 MHz to f(cut-off) and 77 - 89% modulation efficiency.

Photonic crystal surface-emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chua, Song Liang; Lu, Ling; Soljacic, Marin

2015-06-23

A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-planemore » feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.« less

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Vertical electro-absorption modulator design and its integration in a VCSEL

NASA Astrophysics Data System (ADS)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

2018-04-01

Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

High-speed wavelength switching of tunable MEMS vertical cavity surface emitting laser by ringing suppression

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Nishimura, Shun; Nakahama, Masanori; Matsutani, Akihiro; Sakaguchi, Takahiro; Koyama, Fumio

2018-04-01

For use in wavelength division multiplexing (WDM) with high-speed wavelength routing functions, the fast wavelength switching of tunable lasers is a key function. A tunable MEMS vertical cavity surface emitting laser (VCSEL) is a good candidate as a light source for this purpose. The cantilever in MEMS VCSELs has a high mechanical resonance frequency thanks to its small size, but the switching time is limited by the ringing of the cantilever structure. In this paper, we analyzed the mechanical behavior of a cantilever MEMS mirror and demonstrated ringing-free operation with an engineered voltage signal. The applied voltage waveform was optimized in a two-step format and we experimentally obtained ringing free wavelength switching. We measured the transient response of the wavelength by inserting a tunable filter, exhibiting the settling time of less than 2.5 µs, which corresponds to a half period of the cantilever resonance frequency.

Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

NASA Astrophysics Data System (ADS)

Chizhevsky, V. N.

2018-01-01

For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi

1995-05-01

The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.

Visible light emitting vertical cavity surface emitting lasers

DOEpatents

Bryan, Robert P.; Olbright, Gregory R.; Lott, James A.; Schneider, Jr., Richard P.

1995-01-01

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

Visible light emitting vertical cavity surface emitting lasers

DOEpatents

Bryan, R.P.; Olbright, G.R.; Lott, J.A.; Schneider, R.P. Jr.

1995-06-27

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of {lambda}/n, typically within the green to red portion of the visible spectrum. 10 figs.

Electron-beam pumped laser structures based on MBE grown {ZnCdSe}/{ZnSe} superlattices

NASA Astrophysics Data System (ADS)

Kozlovsky, V. I.; Shcherbakov, E. A.; Dianov, E. M.; Krysa, A. B.; Nasibov, A. S.; Trubenko, P. A.

1996-02-01

Cathodoluminescence (CL), photoreflection (PR), phototransmission (PT) of single and multiquantum wells (MQWs) and strain layer {ZnCdSe}/{ZnSe} superlattices (SLs) grown by molecular beam epitaxy (MBE) were studied. An increase of the Stokes shift with the number of quantum wells (QWs) and the appearance of new lines in CL and PT spectra were observed. Room temperature (RT) vertical-cavity surface-emitting laser (VCSEL) operation was achieved by using the SL structures. Output power up to 2.2 W in single longitudinal mode with λ = 493 nm was obtained. Cut facet laser wavelength of the same SL structure was 502 nm.

Multiperiod-grating surface-emitting lasers

NASA Technical Reports Server (NTRS)

Lang, Robert J. (Inventor)

1992-01-01

Surface-emitting distributed feedback (DFB) lasers are disclosed with hybrid gratings. A first-order grating is provided at one or both ends of the active region of the laser for retroreflection of light back into the active region, and a second-order or nonresonant grating is provided at the opposite end for coupling light out perpendicular to the surfaces of the laser or in some other selected direction. The gratings may be curved to focus light retroreflected into the active region and to focus light coupled out to a point. When so focused to a point, the DFB laser may be part of a monolithic read head for a laser recorded disk, or an optical coupler into an optical fiber.

Electrically injected visible vertical cavity surface emitting laser diodes

DOEpatents

Schneider, Richard P.; Lott, James A.

1994-01-01

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.

Electrically injected visible vertical cavity surface emitting laser diodes

DOEpatents

Schneider, R.P.; Lott, J.A.

1994-09-27

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Polarization mode control of long-wavelength VCSELs by intracavity patterning

DOE PAGES

Long, Christopher Michael; Mickovic, Zlatko; Dwir, Benjamin; ...

2016-04-26

Polarization mode control is enhanced in wafer-fused vertical-cavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces birefringence and dichroism, which discriminates between the two polarization states of the fundamental transverse modes. We find that the cavity modifications define the polarization angle at threshold with respect to the crystal axes, and increase the gain anisotropy and birefringence on average, leading to an increase in the polarization switching current. As a result, experimental measurements are explained using the spin-flip model of VCSEL polarization dynamics.

High-speed non-contact measuring apparatus for gauging the thickness of moving sheet material

DOEpatents

Grann, Eric B.; Holcomb, David E.

2000-01-01

An optical measurement apparatus is provided for measuring the thickness of a moving sheet material (18). The apparatus has a pair of optical measurement systems (21, 31) attached to opposing surfaces (14, 16) of a rigid support structure (10). A pair of high-power laser diodes (20,30) and a pair of photodetector arrays (22,32) are attached to the opposing surfaces. Light emitted from the laser diodes is reflected off of the sheet material surfaces (17, 19) and received by the respective photodetector arrays. An associated method for implementing the apparatus is also provided.

Active optical system for advanced 3D surface structuring by laser remelting

NASA Astrophysics Data System (ADS)

Pütsch, O.; Temmler, A.; Stollenwerk, J.; Willenborg, E.; Loosen, P.

2015-03-01

Structuring by laser remelting enables completely new possibilities for designing surfaces since material is redistributed but not wasted. In addition to technological advantages, cost and time benefits yield from shortened process times, the avoidance of harmful chemicals and the elimination of subsequent finishing steps such as cleaning and polishing. The functional principle requires a completely new optical machine technology that maintains the spatial and temporal superposition and manipulation of three different laser beams emitted from two laser sources of different wavelength. The optical system has already been developed and demonstrated for the processing of flat samples of hot and cold working steel. However, since particularly the structuring of 3D-injection molds represents an application example of high innovation potential, the optical system has to take into account the elliptical beam geometry that occurs when the laser beams irradiate a curved surface. To take full advantage of structuring by remelting for the processing of 3D surfaces, additional optical functionality, called EPS (elliptical pre-shaping) has to be integrated into the existing set-up. The development of the beam shaping devices not only requires the analysis of the mechanisms of the beam projection but also a suitable optical design. Both aspects are discussed in this paper.

InP-based three-dimensional photonic integrated circuits

NASA Astrophysics Data System (ADS)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

NASA Astrophysics Data System (ADS)

Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

1987-12-01

The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

Photonic crystal surface-emitting lasers enabled by an accidental Dirac point

DOEpatents

Chua, Song Liang; Lu, Ling; Soljacic, Marin

2014-12-02

A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.

The influence of surface contamination on the ion emission from nanosecond-pulsed laser ablation of Al and Cu

NASA Astrophysics Data System (ADS)

Ullah, S.; Dogar, A. H.; Qayyum, H.; Rehman, Z. U.; Qayyum, A.

2018-04-01

Ions emitted from planar Al and Cu targets irradiated with a 1064 nm pulsed laser were investigated with the help of a time-resolving Langmuir probe. It was found that the intensity of the ions emitted from a target area rapidly decreases with the increasing number of laser shots, and seems to reach saturation after about 10 laser shots. The saturated intensity of Al and Cu ions was approximately 0.1 and 0.3 times the intensity of the respective ions measured at the first laser shot, respectively. The higher target ion intensity for the first few shots is thought to be due to the enhanced ionization of target atoms by vacuum-ultraviolet radiations emitted from the thermally excited/ionized surface contaminants. The reduction of target ion intensity with an increasing number of laser shots thus indicates the removal of contaminants from the irradiated surface area. Laser-cleaned Al and Cu surfaces were then allowed to be recontaminated with residual vacuum gases and the ion intensity was measured at various time delays. The prolonged exposure of the cleaned target to vacuum residual gases completely restores the ion intensity. Regarding surface contaminants removal, laser shots of higher intensities were found to be more effective than a higher number of laser shots having lower intensities.

Time-dynamics of the two-color emission from vertical-external-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Chernikov, A.; Wichmann, M.; Shakfa, M. K.; Scheller, M.; Moloney, J. V.; Koch, S. W.; Koch, M.

2012-01-01

The temporal stability of a two-color vertical-external-cavity surface-emitting laser is studied using single-shot streak-camera measurements. The collected data is evaluated via quantitative statistical analysis schemes. Dynamically stable and unstable regions for the two-color operation are identified and the dependence on the pump conditions is analyzed.

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

NASA Astrophysics Data System (ADS)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Vertical-cavity surface-emitting lasers - Design, growth, fabrication, characterization

NASA Astrophysics Data System (ADS)

Jewell, Jack L.; Lee, Y. H.; Harbison, J. P.; Scherer, A.; Florez, L. T.

1991-06-01

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 microns to above 50 microns. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching; packaging and arrays; and ultrasmall devices.

Distributed feedback laser biosensor incorporating a titanium dioxide nanorod surface

NASA Astrophysics Data System (ADS)

Ge, Chun; Lu, Meng; Zhang, Wei; Cunningham, Brian T.

2010-04-01

A dielectric nanorod structure is used to enhance the label-free detection sensitivity of a vertically-emitting distributed feedback laser biosensor (DFBLB). The device is comprised of a replica molded plastic grating that is subsequently coated with a dye-doped polymer layer and a TiO2 nanorod layer produced by the glancing angle deposition technique. The DFBLB emission wavelength is modulated by the adsorption of biomolecules, whose greater dielectric permittivity with respect to the surrounding liquid media will increase the laser wavelength in proportion to the density of surface-adsorbed biomaterial. The nanorod layer provides greater surface area than a solid dielectric thin film, resulting in the ability to incorporate a greater number of molecules. The detection of a monolayer of protein polymer poly (Lys, Phe) is used to demonstrate that a 90 nm TiO2 nanorod structure improves the detection sensitivity by a factor of 6.6 compared to an identical sensor with a nonporous TiO2 surface.

IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Shi, Z.; Xu, G.; McCann, P. J.; Fang, X. M.; Dai, N.; Felix, C. L.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.

2000-06-01

Midinfrared broadband high-reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors and vertical-cavity surface-emitting lasers (VCSELs) with PbSe as the active material were grown by molecular-beam epitaxy. Because of an extremely high index contrast, mirrors with only three quarter-wave layer pairs had reflectivities exceeding 99%. For pulsed optical pumping, a lead salt VCSEL emitting at the cavity wavelength of 4.5-4.6 μm operated nearly to room temperature (289 K).

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Joint Services Electronics Program. Basic Research in Electronics (JSEP)

DTIC Science & Technology

1992-08-01

DBRs). Our DBR work allows us to develop improved vertical cavity surface-emitting lasers ( VCSELs ) and also to examine details of optical phenomena... in short-cavity lasers. We have used MBE regrowth techniques to provide current tunnelling into the device active region of the VCSEL . We use an AlAs... optical detector structures. We have already developed significant capability in the low temperature (2506C - 3000C) growth of undoped GaAs and AIo.3Gao

Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

DTIC Science & Technology

2015-07-16

SECURITY CLASSIFICATION OF: The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 - 1.3 µm...2015 Approved for Public Release; Distribution Unlimited Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface...ABSTRACT Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report

Integrated bio-fluorescence sensor.

PubMed

Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S

2003-09-26

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.

2016-02-15

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers formore » the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.« less

Nondestructive inspection of aerospace composites by a fiber-coupled laser ultrasonics system

NASA Astrophysics Data System (ADS)

Vandenrijt, J.-F.; Languy, F.; Thizy, C.; Georges, M. P.

2017-06-01

Laser ultrasonics is a technique currently studied for nondestructive inspection of aerospace composite structures based on carbon fibers. It combines a pulsed laser impacting the surface generates an ultrasound inside the material, through the nondestructive thermoelastic effect. Second a detection interferometer probes the impacted point in order to measure the displacement of the surface resulting from the emitted ultrasound wave and the echo coming back from the different interfaces of the structure. Laser ultrasonics is of interest for inspecting complex shaped composites. We have studied the possibility of using frequency doubled YAG laser for the generation and which is fiber-coupled, together with a fibercoupled interferometric probe using a YAG laser in the NIR. Our final system is a lightweight probe attached to a robot arm and which is able to scan complex shapes. The performances of the system are compared for different wavelengths of generations. Also we have studied some experimental parameters of interest such as tolerance to angle and focus distance, and different geometries of generation beams. We show some examples of inspection of reference parts with known defects. In particular C-scans of curved composites structures are presented.

Long-wavelength vertical-cavity laser research at Gore

NASA Astrophysics Data System (ADS)

Jayaraman, Vijaysekhar; Geske, J. C.; MacDougal, Michael H.; Peters, Frank H.; Lowes, Ted D.; Char, T. T.; Van Deusen, Dale R.; Goodnough, T.; Donhowe, Mark N.; Kilcoyne, Sean P.; Welch, David J.

1999-04-01

Vertical cavity surface emitting lasers (VCSELs) operating near 1310 or 1550 nm have been the subject of intensive research by multiple groups for several years. In the past year at Gore, we have demonstrated the first 1300 nm VCSELs which operate with useful power, high modulation rate, and low voltage over the commercial temperature range of 0 - 70 degree(s)C. These results have been achieved using a new structure in which an 850 nm VCSEL optical pump is integrated with the 1300 nm VCSEL. Electrical drive is applied to the 850 nm pump, and 1300 nm light is emitted from the integrated structure. This approach has resulted in over a milliwatt of single transverse mode power at room temperature, and several hundred microwatts of single transverse mode power at 70 degree(s)C. In addition, these devices demonstrate multi-gigabit modulation and excellent coupling efficiency to single-mode fiber.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

NASA Astrophysics Data System (ADS)

Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

2018-04-01

Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

High-emission cold cathode

DOEpatents

Mancebo, L.

1974-01-29

A field-emission cathode having a multitude of field emission points for emitting a copious stream of electrons when subjected to a high field is described. The cathode is constructed by compressing a multitude of tungsten strips alternately arranged with molybdenum strips and copper ribbons or compressing alternately arranged copper plated tungsten and molybdenum strips, heating the arrangement to braze the tungsten and molybdenum strips together with the copper, machining and grinding the exposed strip edges of one side of the brazed arrangement to obtain a precisely planar surface, etching a portion of the molybdenum and copper to leave the edges of the tungsten strips protruding for electron emission, and subjecting the protruding edges of the tungsten strips to a high electric field to degas and roughen the surface to pnovide a large number of emitting points. The resulting structure is particularly useful as a cathode in a transversely excited gaseous laser where the cathode is mounted in a vacuum chamber for emitting electrons under the influence of a high electric field between the cathode and an extractor grid. The electrons pass through the extractor grid, a thin window in the wall of the laser chamber and into the laser chamber which is filled with a gaseous mixture of helium, nitrogen, and carbon dioxide. A second grid is mounted on the gaseous side of the window. The electrons pass into the laser chamber under the influence of a second electric field between the second grid and an anode in the laser chamber to raise selected gas atoms of the gaseous mixture to appropriately excited states so that a subsequent coherent light beam passing through the mixture transversely to the electron stream through windows in opposite ends of the laser chamber stimulates the excited atoms to amplify the beam. (Official Gazette)

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Larsson, Anders; Lee, Luke P.

1991-01-01

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Laser remote sensing of backscattered light from a target sample

DOEpatents

Sweatt, William C [Albuquerque, NM; Williams, John D [Albuquerque, NM

2008-02-26

A laser remote sensing apparatus comprises a laser to provide collimated excitation light at a wavelength; a sensing optic, comprising at least one optical element having a front receiving surface to focus the received excitation light onto a back surface comprising a target sample and wherein the target sample emits a return light signal that is recollimated by the front receiving surface; a telescope for collecting the recollimated return light signal from the sensing optic; and a detector for detecting and spectrally resolving the return light signal. The back surface further can comprise a substrate that absorbs the target sample from an environment. For example the substrate can be a SERS substrate comprising a roughened metal surface. The return light signal can be a surface-enhanced Raman signal or laser-induced fluorescence signal. For fluorescence applications, the return signal can be enhanced by about 10.sup.5, solely due to recollimation of the fluorescence return signal. For SERS applications, the return signal can be enhanced by 10.sup.9 or more, due both to recollimation and to structuring of the SERS substrate so that the incident laser and Raman scattered fields are in resonance with the surface plasmons of the SERS substrate.

Oxygen measurements at high pressures with vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Wang, J.; Sanders, S. T.; Jeffries, J. B.; Hanson, R. K.

Measurements of oxygen concentration at high pressures (to 10.9 bar) were made using diode-laser absorption of oxygen A-band transitions near 760 nm. The wide current-tuning frequency range (>30 cm-1) of vertical cavity surface-emitting lasers (VCSELs) was exploited to enable the first scanned-wavelength demonstration of diode-laser absorption at high pressures; this strategy is more robust than fixed-wavelength strategies, particularly in hostile environments. The wide tuning range and rapid frequency response of the current tuning were further exploited to demonstrate wavelength-modulation absorption spectroscopy in a high-pressure environment. The minimum detectable absorbance demonstrated, 1×10-4, corresponds to 800 ppm-m oxygen detectivity at room temperature and is limited by etalon noise. The rapid- and wide-frequency tunability of VCSELs should significantly expand the application domain of absorption-based sensors limited in the past by the small current-tuning frequency range (typically <2 cm-1) of conventional edge-emitting diode lasers.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

NASA Astrophysics Data System (ADS)

Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

2009-03-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

Graphene surface emitting terahertz laser: Diffusion pumping concept

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davoyan, Arthur R., E-mail: davoyan@seas.upenn.edu; Morozov, Mikhail Yu.; Popov, Vyacheslav V.

2013-12-16

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, andmore » limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.« less

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Modal loss mechanism of micro-structured VCSELs studied using full vector FDTD method.

PubMed

Jo, Du-Ho; Vu, Ngoc Hai; Kim, Jin-Tae; Hwang, In-Kag

2011-09-12

Modal properties of vertical cavity surface-emitting lasers (VCSELs) with holey structures are studied using a finite difference time domain (FDTD) method. We investigate loss behavior with respect to the variation of structural parameters, and explain the loss mechanism of VCSELs. We also propose an effective method to estimate the modal loss based on mode profiles obtained using FDTD simulation. Our results could provide an important guideline for optimization of the microstructures of high-power single-mode VCSELs.

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Slight, T.; Meredith, W.; Gordeev, N. Y.; Nadtochy, A. M.; Payusov, A. S.; Maximov, M. V.; Blokhin, S. A.; Blokhin, A. A.; Zadiranov, Yu. M.; Maleev, N. A.; Ustinov, V. M.; Choquette, K. D.

2016-03-01

A concept of passive cavity surface-emitting laser is proposed aimed to control the temperature shift of the lasing wavelength. The device contains an all-semiconductor bottom distributed Bragg reflector (DBR), in which the active medium is placed, a dielectric resonant cavity and a dielectric top DBR, wherein at least one of the dielectric materials has a negative temperature coefficient of the refractive index, dn/dT < 0. This is shown to be the case for commonly used dielectric systems SiO2/TiO2 and SiO2/Ta2O5. Two SiO2/TiO2 resonant structures having a cavity either of SiO2 or TiO2 were deposited on a substrate, their optical power reflectance spectra were measured at various temperatures, and refractive index temperature coefficients were extracted, dn/dT = 0.0021 K-1 for SiO2 and dn/dT = -0.0092 K-1 for TiO2. Using such dielectric materials allows designing passive cavity surface-emitting lasers having on purpose either positive, or zero, or negative temperature shift of the lasing wavelength dλ/dT. A design for temperature-insensitive lasing wavelength (dλ/dT = 0) is proposed. Employing devices with temperature-insensitive lasing wavelength in wavelength division multiplexing systems may allow significant reducing of the spectral separation between transmission channels and an increase in number of channels for a defined spectral interval enabling low cost energy efficient uncooled devices.

Sub-micrometric surface texturing of AZ31 Mg-alloy through two-beam direct laser interference patterning with a ns-pulsed green fiber laser

NASA Astrophysics Data System (ADS)

Furlan, Valentina; Biondi, Marco; Demir, Ali Gökhan; Pariani, Giorgio; Previtali, Barbara; Bianco, Andrea

2017-11-01

Two-beam direct laser interference patterning (DLIP) is the method that employs two beams and provides control over the pattern geometry by regulating the angle between the beams and the wavelength of the beam. Despite the simplistic optical arrangement required for the method, the feasibility of sub-micrometric patterning of a surface depends on the correct manipulation of the process parameters, especially in the case of metallic materials. Magnesium alloys, from this point of view, exhibit further difficulty in processability due to low melting point and high reactivity. With biocompatibility and biodegradability features, Mg-alloy implants can take further advantage of surface structuring for tailoring the biological behaviour. In this work, a two-beam DLIP setup has been developed employing an industrial grade nanosecond-pulsed fiber laser emitting at 532 nm. The high repetition rate and ramped pulse profile provided by the laser were exploited for a more flexible control over the energy content deposited over the heat-sensitive Mg-alloy. The paper describes the strategies developed for controlling ramped laser emission at 20 kHz repetition rate. The process feasibility window was assessed within a large range of parameters. Within the feasibility window, a complete experimental plan was applied to investigate the effect of main laser process parameters on the pattern dimensions. Periodic surface structures with good definition down to 580 nm ± 20 nm spacing were successfully produced.

Position and orientation tracking system

DOEpatents

Burks, Barry L.; DePiero, Fred W.; Armstrong, Gary A.; Jansen, John F.; Muller, Richard C.; Gee, Timothy F.

1998-01-01

A position and orientation tracking system presents a laser scanning appaus having two measurement pods, a control station, and a detector array. The measurement pods can be mounted in the dome of a radioactive waste storage silo. Each measurement pod includes dual orthogonal laser scanner subsystems. The first laser scanner subsystem is oriented to emit a first line laser in the pan direction. The second laser scanner is oriented to emit a second line laser in the tilt direction. Both emitted line lasers scan planes across the radioactive waste surface to encounter the detector array mounted on a target robotic vehicle. The angles of incidence of the planes with the detector array are recorded by the control station. Combining measurements describing each of the four planes provides data for a closed form solution of the algebraic transform describing the position and orientation of the target robotic vehicle.

Position and orientation tracking system

DOEpatents

Burks, B.L.; DePiero, F.W.; Armstrong, G.A.; Jansen, J.F.; Muller, R.C.; Gee, T.F.

1998-05-05

A position and orientation tracking system presents a laser scanning apparatus having two measurement pods, a control station, and a detector array. The measurement pods can be mounted in the dome of a radioactive waste storage silo. Each measurement pod includes dual orthogonal laser scanner subsystems. The first laser scanner subsystem is oriented to emit a first line laser in the pan direction. The second laser scanner is oriented to emit a second line laser in the tilt direction. Both emitted line lasers scan planes across the radioactive waste surface to encounter the detector array mounted on a target robotic vehicle. The angles of incidence of the planes with the detector array are recorded by the control station. Combining measurements describing each of the four planes provides data for a closed form solution of the algebraic transform describing the position and orientation of the target robotic vehicle. 14 figs.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.

2014-06-09

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasingmore » is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.« less

Antenna coupled photonic wire lasers

DOE PAGES

Kao, Tsung-Kao; Cai, Xiaowei; Lee, Alan W. M.; ...

2015-06-22

Slope efficiency (SE) is an important performance metric for lasers. In conventional semiconductor lasers, SE can be optimized by careful designs of the facet (or the modulation for DFB lasers) dimension and surface. However, photonic wire lasers intrinsically suffer low SE due to their deep sub-wavelength emitting facets. Inspired by microwave engineering techniques, we show a novel method to extract power from wire lasers using monolithically integrated antennas. These integrated antennas significantly increase the effective radiation area, and consequently enhance the power extraction efficiency. When applied to wire lasers at THz frequency, we achieved the highest single-side slope efficiency (~450more » mW/A) in pulsed mode for DFB lasers at 4 THz and a ~4x increase in output power at 3 THz compared with a similar structure without antennas. This work demonstrates the versatility of incorporating microwave engineering techniques into laser designs, enabling significant performance enhancements.« less

Multiple wavelength tunable surface-emitting laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie J.; Harbison, J. P.; Zah, Chung-En; Maeda, M. W.; Florez, L. T.; Stoffel, N. G.; Lee, Tien-Pei

1991-06-01

Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental results are given. The authors obtained 140 unique, uniformly separated, single-mode wavelength emissions from a 7 x 20 VCSEL array. Large total wavelength span (about 430 A) and small wavelength separation (about 3 A) are obtained simultaneously with uncompromised laser performance. All 140 lasers have nearly the same threshold currents, voltages, and resistances. Wavelength tuning is obtained by using a three-mirror coupled-cavity configuration. The three-mirror laser is a two-terminal device and requires only one top contact. Discrete tuning with a range as large as 61 A is achieved with a small change in drive current of only 10.5 mA. The VCSEL output power variation is within 5 dB throughout the entire tuning range.

Photonic quasi-crystal terahertz lasers

PubMed Central

Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles

2014-01-01

Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of ‘defects’, which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1–0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum. PMID:25523102

Photonic quasi-crystal terahertz lasers

NASA Astrophysics Data System (ADS)

Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles

2014-12-01

Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of ‘defects’, which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1-0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum.

Photonic quasi-crystal terahertz lasers.

PubMed

Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H; Davies, A Giles

2014-12-19

Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of 'defects', which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1-0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum.

Beam steering via resonance detuning in coherently coupled vertical cavity laser arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Matthew T., E-mail: matthew.johnson.9@us.af.mil; Siriani, Dominic F.; Peun Tan, Meng

2013-11-11

Coherently coupled vertical-cavity surface-emitting laser arrays offer unique advantages for nonmechanical beam steering applications. We have applied dynamic coupled mode theory to show that the observed temporal phase shift between vertical-cavity surface-emitting array elements is caused by the detuning of their resonant wavelengths. Hence, a complete theoretical connection between the differential current injection into array elements and the beam steering direction has been established. It is found to be a fundamentally unique beam-steering mechanism with distinct advantages in efficiency, compactness, speed, and phase-sensitivity to current.

Investigation of vertical cavity surface emitting laser dynamics for neuromorphic photonic systems

NASA Astrophysics Data System (ADS)

Hurtado, A.; Schires, K.; Henning, I. D.; Adams, M. J.

2012-03-01

We report an approach based upon vertical cavity surface emitting lasers (VCSELs) to reproduce optically different behaviors exhibited by biological neurons but on a much faster timescale. The technique proposed is based on the polarization switching and nonlinear dynamics induced in a single VCSEL under polarized optical injection. The particular attributes of VCSELs and the simple experimental configuration used in this work offer prospects of fast, reconfigurable processing elements with excellent fan-out and scaling potentials for use in future computational paradigms and artificial neural networks.

Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD

NASA Astrophysics Data System (ADS)

Koyama, F.; Mukaihara, T.; Hayashi, Y.; Ohnoki, N.; Hatori, N.; Iga, K.

1995-01-01

We present a novel approach of on-wafer wavelength control for vertical cavity surface-emitting lasers (VCSEL's) using nonplanar metalorganic chemical vapor deposition. The resonant wavelength of 980 nm VCSEL's grown on a patterned substrate can be controlled in the wavelength range over 45 nm by changing the size of circular patterns. A multi-wavelength VCSEL linear array was fabricated by using this technique. The proposed method will be useful for multi-wavelength VCSEL arrays as well as for the cancellation of wavelength nonuniformity over a wafer.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers.

PubMed

Germann, Tim David; Hofmann, Werner; Nadtochiy, Alexey M; Schulze, Jan-Hindrik; Mutig, Alex; Strittmatter, André; Bimberg, Dieter

2012-02-27

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for a detailed physical understanding of this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect is used to modulate individual VCSEL modes by more than 20 dB with an extremely small EOM voltage change of less than 100 mV. Spectral mode analysis reveals modulation of higher order modes and very low wavelength chirp of < 0.5 nm. Dynamic experiments and simulation predict an intrinsic bandwidth of the EOM VCSEL exceeding 50 GHz.

Tunable vertical cavity surface emitting lasers for use in the near infrared biological window

NASA Astrophysics Data System (ADS)

Kitsmiller, Vincent J.; Dummer, Matthew; Johnson, Klein; O'Sullivan, Thomas D.

2018-02-01

We present a near-infrared tunable vertical cavity surface emitting laser (VCSEL) based upon a unique electrothermally tunable microelectromechanical systems (MEMS) topside mirror designed for tissue imaging and sensing. At room temperature, the laser is tunable from 769-782nm with single mode CW output and a peak output power of 1.3mW. We show that the tunable VCSEL is suitable for use in frequency domain diffuse optical spectroscopy by measuring the optical properties of a tissue-simulating phantom over the tunable range. These results indicate that tunable VCSELs may be an attractive choice to enable high spectral resolution optical sensing in a wearable format.

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

NASA Astrophysics Data System (ADS)

Albrecht, Alexander R.; Rotter, Thomas J.; Hains, Christopher P.; Stintz, Andreas; Xin, Guofeng; Wang, Tsuei-Lian; Kaneda, Yushi; Moloney, Jerome V.; Malloy, Kevin J.; Balakrishnan, Ganesh

2011-03-01

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

Polarization effects associated with thermal processing of HY-80 structural steel using high-power laser diode array

NASA Astrophysics Data System (ADS)

Wu, Sheldon S. Q.; Baker, Bradford W.; Rotter, Mark D.; Rubenchik, Alexander M.; Wiechec, Maxwell E.; Brown, Zachary M.; Beach, Raymond J.; Matthews, Manyalibo J.

2017-12-01

Localized heating of roughened steel surfaces using highly divergent laser light emitted from high-power laser diode arrays was experimentally demonstrated and compared with theoretical predictions. Polarization dependence was analyzed using Fresnel coefficients to understand the laser-induced temperature rise of HY-80 steel plates under 383- to 612-W laser irradiation. Laser-induced, transient temperature distributions were directly measured using bulk thermocouple probes and thermal imaging. Finite-element analysis yielded quantitative assessment of energy deposition and heat transport in HY-80 steel using absorptivity as a tuning parameter. The extracted absorptivity values ranged from 0.62 to 0.75 for S-polarized and 0.63 to 0.85 for P-polarized light, in agreement with partially oxidized iron surfaces. Microstructural analysis using electron backscatter diffraction revealed a heat affected zone for the highest temperature conditions (612 W, P-polarized) as evidence of rapid quenching and an austenite to martensite transformation. The efficient use of diode arrays for laser-assisted advanced manufacturing technologies, such as hybrid friction stir welding, is discussed.

Surface-emitting circular DFB, disk- and ring- Bragg resonator lasers with chirped gratings: a unified theory and comparative study.

PubMed

Sun, Xiankai; Yariv, Amnon

2008-06-09

We have developed a theory that unifies the analysis of the modal properties of surface-emitting chirped circular grating lasers. This theory is based on solving the resonance conditions which involve two types of reflectivities of chirped circular gratings. This approach is shown to be in agreement with previous derivations which use the characteristic equations. Utilizing this unified analysis, we obtain the modal properties of circular DFB, disk-, and ring- Bragg resonator lasers. We also compare the threshold gain, single mode range, quality factor, emission efficiency, and modal area of these types of circular grating lasers. It is demonstrated that, under similar conditions, disk Bragg resonator lasers have the highest quality factor, the highest emission efficiency, and the smallest modal area, indicating their suitability in low-threshold, high-efficiency, ultracompact laser design, while ring Bragg resonator lasers have a large single mode range, high emission efficiency, and large modal area, indicating their suitability for high-efficiency, large-area, high-power applications.

High power VCSELs for miniature optical sensors

NASA Astrophysics Data System (ADS)

Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

2010-02-01

Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Miniature Tunable Laser Spectrometer for Detection of a Trace Gas

NASA Technical Reports Server (NTRS)

Christensen, Lance E. (Inventor)

2017-01-01

An open-path laser spectrometer (OPLS) for measuring a concentration of a trace gas, the OPLS including an open-path multi-pass analysis region including a first mirror, a second mirror at a distance and orientation from the first mirror, and a support structure for locating the mirrors, a laser coupled to the analysis region and configured to emit light of a wavelength range and to enable a plurality of reflections of the emitted light between the mirrors, a detector coupled to the analysis region and configured to detect a portion of the emitted light impinging on the detector and to generate a corresponding signal, and an electronic system coupled to the laser and the detector, and configured to adjust the wavelength range of the emitted light from the laser based on the generated signal, and to measure the concentration of the trace gas based on the generated signal.

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Xia, Jinan; Hoan O, Beom; Gol Lee, Seung; Hang Lee, El

2005-03-01

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

Dynamics of laser-induced damage of spherical nanoparticles by high-intensity ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Komolov, Vladimir L.; Gruzdev, Vitaly E.; Przhibelskii, Sergey G.; Smirnov, Dmitry S.

2012-12-01

Damage of a metal spherical nanoparticle by femtosecond laser pulses is analyzed by splitting the overall process into two steps. The fast step includes electron photoemission from a nanoparticle. It takes place during direct action of a laser pulse and its rate is evaluated as a function of laser and particle parameters by two approaches. Obtained results suggest the formation of significant positive charge of the nanoparticles due to the photoemission. The next step includes ion emission that removes the excessive positive charge and modifies particle structure. It is delayed with respect to the photo-emission and is analyzed by a simple analytical model and modified molecular dynamics. Obtained energy distribution suggests generation of fast ions capable of penetrating into surrounding material and generating defects next to the nanoparticle. The modeling is extended to the case of a nanoparticle on a solid surface to understand the basic mechanism of surface laser damage initiated by nano-contamination. Simulations predict embedding the emitted ions into substrate within a spot with size significantly exceeding the original particle size. We discuss the relation of those effects to the problem of bulk and surface laser-induced damage of optical materials by single and multiple ultrashort laser pulses.

Semiconductor light sources for near- and mid-infrared spectral ranges

NASA Astrophysics Data System (ADS)

Karachinsky, L. Ya; Babichev, A. V.; Gladyshev, A. G.; Denisov, D. V.; Filimonov, A. V.; Novikov, I. I.; Egorov, A. Yu

2017-11-01

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

760 nm high-performance VCSEL growth and characterization

NASA Astrophysics Data System (ADS)

Rinaldi, Fernando; Ostermann, Johannes M.; Kroner, Andrea; Riedl, Michael C.; Michalzik, Rainer

2006-04-01

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

Vertical-cavity surface-emitting laser sources for gigahertz-bandwidth, multiwavelength frequency-domain photon migration

NASA Astrophysics Data System (ADS)

O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.

2017-10-01

Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

NASA Astrophysics Data System (ADS)

Gobet, Mathilde; Bae, Hopil P.; Sarmiento, Tomas; Harris, James S.

2008-02-01

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

Thermally stable surface-emitting tilted wave laser

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Kalosha, V. P.; Ledentsov, N.; Agustin, M.; Kropp, J. R.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu; Kulagina, M. M.; Zhukov, A. E.

2018-02-01

Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in-plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs-based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non-alloyed metal grid. Rectangular-shaped 400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of 70 μm. 7 μm-wide metal stripes serve as non-alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL-like mode at 854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field 10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of 840 nm at room temperature, emitting light at two symmetric lobes at tilt angles 40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of 1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in-plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM-polarized surface-trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L-I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Karachinskii, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Blokhin, S. A.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Voropaev, K. O.; Ionov, A. S.; Agustin, M.; Ledentsov, N. N.; Egorov, A. Yu.

2018-01-01

The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In0.74Ga0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40-45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Tunable vertical-cavity surface-emitting laser with feedback to implement a pulsed neural model. 2. High-frequency effects and optical coupling.

PubMed

Romariz, Alexandre R S; Wagner, Kelvin H

2007-07-20

The operation of an optoelectronic dynamic neural model implementation is extended to higher frequencies. A simplified model of thermal effects in vertical-cavity surface-emitting lasers correctly predicts the qualitative changes in the nonlinear mapping implementation with frequency. Experiments and simulations show the expected resonance properties of this model neuron, along with the possibility of other dynamic effects in addition to the ones observed in the original FitzHugh-Nagumo equations. Results of optical coupling between two similar pulsing artificial neurons are also presented.

Molecular beam epitaxy growth method for vertical-cavity surface-emitting laser resonators based on substrate thermal emission

NASA Astrophysics Data System (ADS)

Talghader, J. J.; Hadley, M. A.; Smith, J. S.

1995-12-01

A molecular beam epitaxy growth monitoring method is developed for distributed Bragg reflectors and vertical-cavity surface-emitting laser (VCSEL) resonators. The wavelength of the substrate thermal emission that corresponds to the optical cavity resonant wavelength is selected by a monochromator and monitored during growth. This method allows VCSEL cavities of arbitrary design wavelength to be grown with a single control program. This letter also presents a theoretical model for the technique which is based on transmission matrices and simple thermal emission properties. Demonstrated reproducibility of the method is well within 0.1%.

Method and apparatus for real time weld monitoring

DOEpatents

Leong, Keng H.; Hunter, Boyd V.

1997-01-01

An improved method and apparatus are provided for real time weld monitoring. An infrared signature emitted by a hot weld surface during welding is detected and this signature is compared with an infrared signature emitted by the weld surface during steady state conditions. The result is correlated with weld penetration. The signal processing is simpler than for either UV or acoustic techniques. Changes in the weld process, such as changes in the transmitted laser beam power, quality or positioning of the laser beam, change the resulting weld surface features and temperature of the weld surface, thereby resulting in a change in the direction and amount of infrared emissions. This change in emissions is monitored by an IR sensitive detecting apparatus that is sensitive to the appropriate wavelength region for the hot weld surface.

A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Chung-Yi; Tsai, Wen-Shing

2018-02-01

This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

Long wavelength vertical cavity surface emitting laser

DOEpatents

Choquette, Kent D.; Klem, John F.

2005-08-16

Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.

Coupling strategies for coherent operation of quantum cascade ring laser arrays

NASA Astrophysics Data System (ADS)

Schwarzer, Clemens; Yao, Y.; Mujagić, E.; Ahn, S.; Schrenk, W.; Chen, J.; Gmachl, C.; Strasser, G.

2011-12-01

We report the design, fabrication and operation of coherently coupled ring cavity surface emitting quantum cascade lasers, emitting at wavelength around 8 μm. Special emphasis is placed on the evaluation of optimal coupling approaches and corresponding parameters. Evanescent field coupling as well as direct coupling where both devices are physically connected is presented. Furthermore, exploiting the Vernier-effect was used to obtain enhanced mode selectivity and robust coherent coupling of two ring-type quantum cascade lasers. Investigations were performed at pulsed room-temperature operation.

Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242

DTIC Science & Technology

1992-01-01

equation and taking into account the phase changes which occur at the surface of the irradiated solid. Intense pulsed laser irradiation induces rapid...resulted in the realization of pn junction light emitting devices operating in the blue and blue/green portion of the spectrum such as pulsed lasers (3M...such as pulse lasers [3-51 and multiple quantum well light emitting devices 16). It is expected that these recent developments will open a new stage of

Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers.

PubMed

Cao, J R; Lee, Po-Tsung; Choi, Sang-Jun; O'Brien, John D; Dapkus, P Daniel

2002-01-01

Lithographic tuning of operating wavelengths in a photonic crystal laser array is demonstrated. The photonic crystal lattice constant is varied by 2 nm between elements of the array, and a wavelength spacing of approximately 4 nm is achieved.

Advances in tunable diode laser technology

NASA Technical Reports Server (NTRS)

Lo, W.

1980-01-01

The improvement of long-term reliability, the purification of mode properties, and the achievement of higher-temperature operation were examined. In reliability studies a slow increase in contact resistance during room temperature storage for lasers fabricated with In-Au or In-Pt contacts was observed. This increase is actually caused by the diffusion of In into the surface layer of laser crystals. By using a three layered structure of In-Au-Pt or In-Pt-Au, this mode of degradation was reduced. In characterizing the mode properties, it was found that the lasers emit in a highly localized, filamentary manner. For widestripe lasers the emission occurs near the corners of the junction. In order to achieve single-mode operation, stripe widths on the order of 8-10 micrometers are needed. Also, it was found that room temperature electroluminescence is possible near 4.6 micrometers.

Time-resolved spectral characterization of ring cavity surface emitting and ridge-type distributed feedback quantum cascade lasers by step-scan FT-IR spectroscopy.

PubMed

Brandstetter, Markus; Genner, Andreas; Schwarzer, Clemens; Mujagic, Elvis; Strasser, Gottfried; Lendl, Bernhard

2014-02-10

We present the time-resolved comparison of pulsed 2nd order ring cavity surface emitting (RCSE) quantum cascade lasers (QCLs) and pulsed 1st order ridge-type distributed feedback (DFB) QCLs using a step-scan Fourier transform infrared (FT-IR) spectrometer. Laser devices were part of QCL arrays and fabricated from the same laser material. Required grating periods were adjusted to account for the grating order. The step-scan technique provided a spectral resolution of 0.1 cm(-1) and a time resolution of 2 ns. As a result, it was possible to gain information about the tuning behavior and potential mode-hops of the investigated lasers. Different cavity-lengths were compared, including 0.9 mm and 3.2 mm long ridge-type and 0.97 mm (circumference) ring-type cavities. RCSE QCLs were found to have improved emission properties in terms of line-stability, tuning rate and maximum emission time compared to ridge-type lasers.

Surface modification of platinum by laser-produced X-rays

NASA Astrophysics Data System (ADS)

Latif, Hamid; Shahid Rafique, M.; Khaleeq-ur-Rahaman, M.; Sattar, Abdul; Anjum, S.; Usman, A.; Zaheer, S.; Rawat, R. S.

2014-11-01

Laser-induced plasma is used as an X-ray source for the growth of hillocks like nanostructures on platinum surface. To generate X-rays, plasma is produced by Nd:YAG laser, which is operated at second harmonics (λ = 532 nm, E = 400 mJ). Analytical grade 5 N pure Al, Cu and W are used as laser targets for X-rays production. X-rays produced from Al, Cu and W plasmas are used to irradiate three analytical grade (5 N pure) platinum substrates, respectively, under the vacuum ∼10-4 torr. XRD analysis shows considerable structural changes in the exposed platinum. The decrement in reflection intensities, increment in dislocation line density, change in d-spacing and disturbance in the periodicity of planes evidently prove these structural changes. Atomic force microscope AFM topographic analysis of the platinum exposed to X-rays emitted from Al, Cu and W targets showed that nanometer-size hillocks are produced on the platinum surface irrespective of the source. It has also been observed that due to these hillocks, the roughness of the surface has increased. Conductivity of hillocks produced from X-rays produced by Al, Cu and W targets is compared and it is shown that the hillocks produced by Al target X-rays have better conductivity compared to the hillocks produced by X-rays from Cu and W targets.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

NASA Technical Reports Server (NTRS)

Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

2007-01-01

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yi; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared tomore » that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.« less

Room temperature continuous wave mid-infrared VCSEL operating at 3.35 μm

NASA Astrophysics Data System (ADS)

Jayaraman, V.; Segal, S.; Lascola, K.; Burgner, C.; Towner, F.; Cazabat, A.; Cole, G. D.; Follman, D.; Heu, P.; Deutsch, C.

2018-02-01

Tunable vertical cavity surface emitting lasers (VCSELs) offer a potentially low cost tunable optical source in the 3-5 μm range that will enable commercial spectroscopic sensing of numerous environmentally and industrially important gases including methane, ethane, nitrous oxide, and carbon monoxide. Thus far, achieving room temperature continuous wave (RTCW) VCSEL operation at wavelengths beyond 3 μm has remained an elusive goal. In this paper, we introduce a new device structure that has enabled RTCW VCSEL operation near the methane absorption lines at 3.35 μm. This device structure employs two GaAs/AlGaAs mirrors wafer-bonded to an optically pumped active region comprising compressively strained type-I InGaAsSb quantum wells grown on a GaSb substrate. This substrate is removed in processing, as is one of the GaAs mirror substrates. The VCSEL structure is optically pumped at room temperature with a CW 1550 nm laser through the GaAs substrate, while the emitted 3.3 μm light is captured out of the top of the device. Power and spectrum shape measured as a function of pump power exhibit clear threshold behavior and robust singlemode spectra.

Permutation entropy with vector embedding delays

NASA Astrophysics Data System (ADS)

Little, Douglas J.; Kane, Deb M.

2017-12-01

Permutation entropy (PE) is a statistic used widely for the detection of structure within a time series. Embedding delay times at which the PE is reduced are characteristic timescales for which such structure exists. Here, a generalized scheme is investigated where embedding delays are represented by vectors rather than scalars, permitting PE to be calculated over a (D -1 ) -dimensional space, where D is the embedding dimension. This scheme is applied to numerically generated noise, sine wave and logistic map series, and experimental data sets taken from a vertical-cavity surface emitting laser exhibiting temporally localized pulse structures within the round-trip time of the laser cavity. Results are visualized as PE maps as a function of embedding delay, with low PE values indicating combinations of embedding delays where correlation structure is present. It is demonstrated that vector embedding delays enable identification of structure that is ambiguous or masked, when the embedding delay is constrained to scalar form.

Decalin-assisted light emitting porous Si formation and its optical, surface and morphological properties

NASA Astrophysics Data System (ADS)

Karatutlu, Ali; Istengir, Sumeyra; Cosgun, Sedat; Seker, Isa; Unal, Bayram

2017-11-01

In this research paper, light emitting porous silicon (Lep-Si) samples were fabricated by a surfactant-mediated chemical stain etching solution in order to form homogenous luminescent nanostructures at room temperature. As an industrially important solvent, decalin (decahydronaphtalene) was used as a surfactant in the HF/HNO3 solutions in order to control the etching process. Morphological, surface and optical properties of the Lep-Si samples were examined using atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL) spectroscopy, and laser scanning confocal microscopy (LSCM) techniques. These characterization techniques were correlated with the various etching times including depth dependent luminescence profiles for the first time. We report the optimum conditions for production of the most efficient Lep-Si using decalin (decahydronaphtalene) and possible structural origins of light emission using the depth dependent luminescence measurements.

Transverse single-mode edge-emitting lasers based on coupled waveguides.

PubMed

Gordeev, Nikita Yu; Payusov, Alexey S; Shernyakov, Yuri M; Mintairov, Sergey A; Kalyuzhnyy, Nikolay A; Kulagina, Marina M; Maximov, Mikhail V

2015-05-01

We report on the transverse single-mode emission from InGaAs/GaAs quantum well edge-emitting lasers with broadened waveguide. The lasers are based on coupled large optical cavity (CLOC) structures where high-order vertical modes of the broad active waveguide are suppressed due to their resonant tunneling into a coupled single-mode passive waveguide. The CLOC lasers have shown stable Gaussian-shaped vertical far-field profiles with a reduced divergence of ∼22° FWHM (full width at half-maximum) in CW (continuous-wave) operation.

Predicting threshold and location of laser damage on optical surfaces

DOEpatents

Siekhaus, Wigbert

1987-01-01

An apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities comprising, a focused and pulsed laser, an photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Dynamics of formation of the liquid-drop phase of laser erosion jets near the surfaces of metal targets

NASA Astrophysics Data System (ADS)

Goncharov, V. K.; Kontsevoi, V. L.; Puzyrev, M. V.

1995-03-01

An investigation was made of laser erosion jets formed at 0.1-1.5 mm above the surfaces of Pb, Co, Ni, Sn, and Zn targets. A neodymium laser emitting rectangular pulses of 400 μs duration and of energy up to 400 J was used. The diameters, as well as the number density and volume fraction of the metal particles present in the jet, were measured. An analysis of the results showed that the metal liquid drops broke up near the surface and experienced additional evaporation because of their motion opposite to the laser beam.

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

NASA Astrophysics Data System (ADS)

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

2014-11-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

Quantum dots for GaAs-based surface emitting lasers at 1300 nm

NASA Astrophysics Data System (ADS)

Grundmann, M.; Ledentsov, N. N.; Hopfer, F.; Heinrichsdorff, F.; Guffarth, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Musikhin, Yu. G.; Alferov, Zh. I.; Lott, J. A.; Zhakharov, N. D.; Werner, P.

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Phasing surface emitting diode laser outputs into a coherent laser beam

DOEpatents

Holzrichter, John F [Berkeley, CA

2006-10-10

A system for generating a powerful laser beam includes a first laser element and at least one additional laser element having a rear laser mirror, an output mirror that is 100% reflective at normal incidence and <5% reflective at an input beam angle, and laser material between the rear laser mirror and the output mirror. The system includes an injector, a reference laser beam source, an amplifier and phase conjugater, and a combiner.

Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates

NASA Astrophysics Data System (ADS)

Kamath, K.; Bhattacharya, P.; Singh, J.

1997-05-01

Multispectral semiconductor laser arrays on single chip is demonstrated by molecular beam epitaxial (MBE) growth of {In0.2Ga0.8As}/{GaAs} quantum well lasers on GaAs (1 0 0) substrates patterned by dry etching. No regrowth is needed for simple edge emitting lasers. It was observed that the laser characteristics are not degraded by the patterned growth. The shift in the emission wavelength obtained by this method can be controlled by varying the width of the pre-patterned ridges as well as by selecting the regions with different number of vertical sidewalls on both sides. We have also shown that multispectral vertical cavity surface emitting laser (VCSEL) arrays can be made by this technique with a single regrowth.

Ultraviolet Polariton Laser

DTIC Science & Technology

2015-09-17

Ultraviolet Polariton Laser Significant progress was achieved in the epitaxy of deep UV AlN/ AlGaN Bragg mirrors and microcavity structures paving...the way to the successful fabrication of vertical cavity emitting laser structures and polariton lasers. For the first time DBRs providing sufficient...high reflectivity for polariton emission were demonstrated. Thanks to a developed strain balanced Al0.85Ga0.15N template, the critical thickness

Surface-plasmon--ion interaction in laser ablation of ions from a surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ritchie, R.H.; Manson, J.R.; Echenique, P.M.

1994-01-15

Experimental work by Shea and Compton suggests that Ag[sup +] ions emitted from a roughened Ag surface irradiated by a nanosecond or picosecond laser beam may absorb the full energy of the Ag surface plasmon (SP). We have modeled this process as an inverse bremsstrahlung-type absorption of the SP quantum by an Ag[sup +] ion which undergoes a collision with the surface. We estimate the absorption probability and find it to be consistent with the Shea-Compton results.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1993-12-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. Concentrtion was on epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer involves creating a nonuniform substrate surface temperature across the wafer during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate temperature. Growth is investigated with the use of a patterned spacer (either a Ga or Si substrate) placed in-between the substrate and its heater. The temperature distribution on such wafers is used to guide our experiments. A reflectivity measurement apparatus that is capable of mapping a 2 in. wafer with a 100 microns diameter resolution was built for diagnosing our wafers. In this first six-month report, our calculations, the various experimental results, and a discussion on future directions are presented.

Simulation of Optical Resonators for Vertical-Cavity Surface-Emitting Lasers (vcsel)

NASA Astrophysics Data System (ADS)

Mansour, Mohy S.; Hassen, Mahmoud F. M.; El-Nozahey, Adel M.; Hafez, Alaa S.; Metry, Samer F.

2010-04-01

Simulation and modeling of the reflectivity and transmissivity of the multilayer DBR of VCSEL, as well as inside the active region quantum well are analyzed using the characteristic matrix method. The electric field intensity distributions inside such vertical-cavity structure are calculated. A software program under MATLAB environment is constructed for the simulation. This study was performed for two specific Bragg wavelengths 980 nm and 370 nm for achieving a resonant periodic gain (RPG)

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Coupled-cavity surface-emitting lasers: spectral and polarization threshold characteristics and electrooptic switching.

PubMed

Panajotov, Krassimir P; Zujewski, Mateusz; Thienpont, Hugo

2010-12-20

We study spectral and polarization threshold characteristics of coupled-cavity Vertical-Surface-Emitting Lasers (CC-VCSEL) on the base of a simple matrix approach. We show that strong wavelength discrimination can be achieved in CC-VCSELs by slightly detuning the cavities. However, polarization discrimination is not provided by the coupled-cavity design. We also consider the case of reverse-biasing one of the cavities, i.e. using it as a modulator via linear and/or quadratic electrooptic effect. Such a CC-VCSEL can act as a voltage-controlled polarization or wavelength switching device that is decoupled from the laser design and can be optimized for high modulation speed. We also show that using QD stack instead of quantum wells in the top cavity would lead to significant reduction of the driving electrical field.

Photonic generation of polarization-resolved wideband chaos with time-delay concealment in three-cascaded vertical-cavity surface-emitting lasers.

PubMed

Liu, Huijie; Li, Nianqiang; Zhao, Qingchun

2015-05-10

Optical chaos generated by chaotic lasers has been widely used in several important applications, such as chaos-based communications and high-speed random-number generators. However, these applications are susceptible to degradation by the presence of time-delay (TD) signature identified from the chaotic output. Here we propose to achieve the concealment of TD signature, along with the enhancement of chaos bandwidth, in three-cascaded vertical-cavity surface-emitting lasers (VCSELs). The cascaded system is composed of an external-cavity master VCSEL, a solitary intermediate VCSEL, and a solitary slave VCSEL. Through mapping the evolutions of TD signature and chaos bandwidth in the parameter space of the injection strength and frequency detuning, photonic generation of polarization-resolved wideband chaos with TD concealment is numerically demonstrated for wide regions of the injection parameters.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Predicting threshold and location of laser damage on optical surfaces

DOEpatents

Siekhaus, W.

1985-02-04

Disclosed is an apparatus useful in the prediction of the damage threshold of various optical devices, the location of weak spots on such devices and the location, identification, and elimination of optical surface impurities. The apparatus comprises a focused and pulsed laser, a photo electric detector/imaging means, and a timer. The weak spots emit photoelectrons when subjected to laser intensities that are less than the intensity actually required to produce the damage. The weak spots may be eliminated by sustained exposure to the laser beam.

Vertical-cavity surface-emitting lasers: present and future

NASA Astrophysics Data System (ADS)

Morgan, Robert A.

1997-04-01

This manuscript reviews the present status of 'commercial- grade,' state-of-the-art planar, batch-fabricable, vertical- cavity surface-emitting lasers (VCSELs). Commercial-grade performance on all fronts for high-speed data communications is clearly established. In discussing the 'present,' we focus on the entrenched proton-implanted AlGaAs-based (emitting near 850 nm) technology. Renditions of this VCSEL design exist in commercial products and have enabled numerous application demonstrations. Our designs more than adequately meet producibility, performance, and robustness stipulations. Producibility milestones include greater than 99% device yield across 3-in-dia metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across greater than 100-nm range. Progress in performance includes the elimination of the excessive voltage-drop that plagued VCSELs as recently as 2 to 3 years ago. Threshold voltages as low as Vth equals 1.53 V (and routinely less than 1.6 V) are now commonplace. Submilliamp threshold currents (Ith equals 0.68 mA) have even been demonstrated with this planar structure. Moreover, continuous wave (cw) power Pcw greater than 59 mW and respectable wall-plug efficiencies ((eta) wp equals 28%) have been demonstrated. VCSEL robustness is evidenced by maximum cw lasing temperature T equals 200 degrees Celsius and temperature ranges of 10 K to 400 K and minus 55 degrees Celsius to 155 degrees Celsius on a single VCSEL. These characteristics should enable great advances in VCSEL-based technologies and beckon the notion that 'commercial-grade' VCSELs are viable in cryogenic and avionics/military environments. We also discuss what the future may hold in extensions of this platform to different wavelengths, increased integration, and advanced structures. This includes low-threshold, high- speed, single-mode VCSELs, hybrid VCSEL transceivers, and self-pulsating VCSELs.

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

NASA Astrophysics Data System (ADS)

Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

2003-04-01

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

PubMed

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miah, M. J., E-mail: jarez.miah@tu-berlin.de; Posilovic, K.; Kalosha, V. P.

2014-10-13

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{supmore » −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.« less

Optical Phased Array Antennas using Coupled Vertical Cavity Surface Emitting Lasers

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Rojas, Roberto A.; Nessel, James A.; Miranda, Felix A.

2007-01-01

High data rate communication links are needed to meet the needs of NASA as well as other organizations to develop space-based optical communication systems. These systems must be robust to high radiation environments, reliable, and operate over a wide temperature range. Highly desirable features include beam steering capability, reconfigurability, low power consumption, and small aperture size. Optical communication links, using coupled vertical cavity surface emitting laser radiating elements are promising candidates for the transmit portion of these communication links. In this talk we describe a mission scenario, and how the antenna requirements are derived from the mission needs. We describe a potential architecture for this type of antenna, and outline the advantages and drawbacks of this approach relative to competing technologies. The technology we are proposing used coupled arrays of 1550 nm vertical cavity surface emitting lasers for transmission. The feasibility of coupling these arrays together, to form coherent high-power beams that can be modulated at data rates exceeding 1 Gbps, will be explored. We will propose an architecture that enables electronic beam steering, thus mitigating the need for ancillary acquisition, tracking and beam pointing equipment such as needed for current optical communicatin systems. The beam-steering capability we are proposing also opens the possibility of using this technology for inter-satellite communicatin links, and satellite-to-surface links.

Cylindrically distributing optical fiber tip for uniform laser illumination of hollow organs

NASA Astrophysics Data System (ADS)

Buonaccorsi, Giovanni A.; Burke, T.; MacRobert, Alexander J.; Hill, P. D.; Essenpreis, Matthias; Mills, Timothy N.

1993-05-01

To predict the outcome of laser therapy it is important to possess, among other things, an accurate knowledge of the intensity and distribution of the laser light incident on the tissue. For irradiation of the internal surfaces of hollow organs, modified fiber tips can be used to shape the light distribution to best suit the treatment geometry. There exist bulb-tipped optical fibers emitting a uniform isotropic distribution of light suitable for the treatment of organs which approximate a spherical geometry--the bladder, for example. For the treatment of organs approximating a cylindrical geometry--e.g. the oesophagus--an optical fiber tip which emits a uniform cylindrical distribution of light is required. We report on the design, development and testing of such a device, the CLD fiber tip. The device was made from a solid polymethylmethacrylate (PMMA) rod, 27 mm in length and 4 mm in diameter. One end was shaped and 'silvered' to form a mirror which reflected the light emitted from the delivery fiber positioned at the other end of the rod. The shape of the mirror was such that the light fell with uniform intensity on the circumferential surface of the rod. This surface was coated with BaSO4 reflectance paint to couple the light out of the rod and onto the surface of the tissue.

Underwater Laser Micromilling of Commercially-Pure Titanium Using Different Scan Overlaps

NASA Astrophysics Data System (ADS)

Charee, Wisan; Tangwarodomnukun, Viboon

2018-01-01

Underwater laser milling process is a technique for minimizing the thermal damage and gaining a higher material removal rate than processing in air. This paper presents the effect of laser scan overlap on cavity width, depth and surface roughness in the laser milling of commercially-pure titanium in water. The effects of laser pulse energy and pulse repetition rate were also examined, in which a nanosecond pulse laser emitting a 1064-nm wavelength was used in this study. The experimental results indicated that a wide and deep cavity was achievable under high laser energy and large scan overlap. According to the surface roughness, the use of high pulse repetition rate together with low laser energy can promote a smooth laser-milled surface particularly at 50% scan overlap. These findings can further suggest a suitable laser micromilling condition for titanium in roughing and finishing operations.

Physical and optical limitations using ArF-excimer and Er:YAG lasers for PRK

NASA Astrophysics Data System (ADS)

Semchishen, Vladimir A.; Mrochen, Michael; Seiler, Theo

1998-06-01

The Erbium:YAG laser emitting at a wavelength of 2,94 micrometer have been promised as an alternative laser for the ArF-excimer laser (193 nm) in photorefractive keratectomy (PRK). This report discusses the limitations of laser parameters such as wavelength, energy density and pulse duration for the ablation of the cornea. In addition, the melting process during ablation on the corneal surface roughness may play a role.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Comparative study of the thermal effects of four semiconductor lasers on the enamel and pulp chamber of a human tooth.

PubMed

Arrastia, A M; Machida, T; Smith, P W; Matsumoto, K

1994-01-01

An in vitro thermometric study was conducted on various GaAlAs semiconductor lasers emitting at wavelengths between 750 nm and 905 nm, to verify whether these lasers produce significant heating during application to tooth structure. Measurements were conducted in vitro, using a thermal camera and a thermocouple during a 60, 120, and 180 s laser exposure at energy densities between 1.5 and 2,400 J/cm2. Mean temperature changes on surface enamel were statistically significant in all groups at P < or = .05 and P < or = .01. The higher the energy density applied to a surface area, the greater the temperature rise observed using the same spot size, operation mode, and wavelength. Intrapulpal temperature elevations measured > or = 3 degrees C. An in vivo study was also conducted to determine whether perceptible stimuli are experienced by patients during this time of laser treatment and to verify results of the in vitro study. The results did not conform well with the in vitro study because of uncontrollable variables. None of the patients who received irradiation treatment described any perceptible stimuli.

The effect of MLS laser radiation on cell lipid membrane.

PubMed

Pasternak, Kamila; Wróbel, Dominika; Nowacka, Olga; Pieszyński, Ireneusz; Bryszewska, Maria; Kujawa, Jolanta

2018-03-14

Authors of numerous publications have proved the therapeutic effect of laser irradiation on biological material, but the mechanisms at cellular and subcellular level are not yet well understood. The aim of this study was to assess the effect of laser radiation emitted by the MLS M1 system (Multiwave Locked System) at two wavelengths (808 nm continuous and 905 nm pulsed) on the stability and fluidity of liposomes with a lipid composition similar to that of human erythrocyte membrane or made of phosphatidylocholine. Liposomes were exposed to low-energy laser radiation at surface densities 195 mW/cm² (frequency 1,000 Hz) and 230 mW/cm² (frequency 2,000 Hz). Different doses of radiation energy in the range 0-15 J were applied. The surface energy density was within the range 0.46 - 4.9 J/cm ². The fluidity and stability of liposomes subjected to such irradiation changed depending on the parameters of radiation used. Since MLS M1 laser radiation, depending on the parameters used, affects fluidity and stability of liposomes with the lipid content similar to erythrocyte membrane, it may also cause structural and functional changes in cell membranes.

Label free biosensor incorporating a replica-molded, vertically emitting distributed feedback laser

NASA Astrophysics Data System (ADS)

Lu, M.; Choi, S. S.; Wagner, C. J.; Eden, J. G.; Cunningham, B. T.

2008-06-01

A label free biosensor based upon a vertically emitting distributed feedback (DFB) laser has been demonstrated. The DFB laser comprises a replica-molded, one-dimensional dielectric grating coated with laser dye-doped polymer as the gain medium. Adsorption of biomolecules onto the laser surface alters the DFB laser emission wavelength, thereby permitting the kinetic adsorption of a protein polymer monolayer or the specific binding of small molecules to be quantified. A bulk sensitivity of 16.6nm per refractive index unit and the detection of a monolayer of the protein polymer poly(Lys, Phe) have been observed with this biosensor. The sensor represents a departure from conventional passive resonant optical sensors from the standpoint that the device actively generates its own narrowband high intensity output without stringent requirements on the coupling alignments, resulting in a simple, robust illumination and detection configuration.

Vertically Emitting Indium Phosphide Nanowire Lasers.

PubMed

Xu, Wei-Zong; Ren, Fang-Fang; Jevtics, Dimitars; Hurtado, Antonio; Li, Li; Gao, Qian; Ye, Jiandong; Wang, Fan; Guilhabert, Benoit; Fu, Lan; Lu, Hai; Zhang, Rong; Tan, Hark Hoe; Dawson, Martin D; Jagadish, Chennupati

2018-06-13

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Semiconductor laser joint study program with Rome Laboratory

NASA Astrophysics Data System (ADS)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

Multi-angle VECSEL cavities for dispersion control and multi-color operation

NASA Astrophysics Data System (ADS)

Baker, Caleb; Scheller, Maik; Laurain, Alexandre; Yang, Hwang-Jye; Ruiz Perez, Antje; Stolz, Wolfgang; Addamane, Sadhvikas J.; Balakrishnan, Ganesh; Jones, R. Jason; Moloney, Jerome V.

2017-02-01

We present a novel Vertical External Cavity Surface Emitting Laser (VECSEL) cavity design which makes use of multiple interactions with the gain region under different angles of incidence in a single round trip. This design allows for optimization of the net, round-trip Group Delay Dispersion (GDD) by shifting the GDD of the gain via cavity fold angle while still maintaining the high gain of resonant structures. The effectiveness of this scheme is demonstrated with femtosecond-regime pulses from a resonant structure and record pulse energies for the VECSEL gain medium. In addition, we show that the interference pattern of the intracavity mode within the active region, resulting from the double-angle multifold, is advantageous for operating the laser in CW on multiple wavelengths simultaneously. Power, noise, and mode competition characterization is presented.

Gain Coupling VECSELs (POSTPRINT)

DTIC Science & Technology

2013-01-01

International Conference on Molecular Beam Epitaxy (MBE-XV). 10. A. Siegman , Lasers , University Sciences Books, 1986. 11. C. Hessenius, N. Terry, M...Clearance Date 28 December 2012. Report contains color. 14. ABSTRACT Vertical external cavity surface emitting lasers (VECSELs) provide a flexible...platform in order to explore curious laser designs and systems as their high-power, high-brightness make them attractive for many applications, and their

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

NASA Astrophysics Data System (ADS)

Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2015-01-01

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

NASA Astrophysics Data System (ADS)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

2015-03-01

High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

Visible Quantum Nanophotonics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramania, Ganapathi Subramanian; Wang, George T.; Fischer, Arthur J.

2017-09-01

The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDsmore » into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.« less

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

NASA Astrophysics Data System (ADS)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V.; Dang, Cuong

The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

DBR, Sub-wavelength grating, and Photonic crystal slab Fabry-Perot cavity design using phase analysis by FDTD.

PubMed

Kim, Jae Hwan Eric; Chrostowski, Lukas; Bisaillon, Eric; Plant, David V

2007-08-06

We demonstrate a Finite-Difference Time-Domain (FDTD) phase methodology to estimate resonant wavelengths in Fabry-Perot (FP) cavity structures. We validate the phase method in a conventional Vertical-Cavity Surface-Emitting Laser (VCSEL) structure using a transfer-matrix method, and compare results with a FDTD reflectance method. We extend this approach to a Sub-Wavelength Grating (SWG) and a Photonic Crystal (Phc) slab, either of which may replace one of the Distributed Bragg Reflectors (DBRs) in the VCSEL, and predict resonant conditions with varying lithographic parameters. Finally, we compare the resonant tunabilities of three different VCSEL structures, taking quality factors into account.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Demonstration of enhanced side-mode suppression in metal-filled photonic crystal vertical cavity lasers.

PubMed

Griffin, Benjamin G; Arbabi, Amir; Peun Tan, Meng; Kasten, Ansas M; Choquette, Kent D; Goddard, Lynford L

2013-06-01

Previously reported simulations have suggested that depositing thin layers of metal over the surface of a single-mode, etched air hole photonic crystal (PhC) vertical-cavity surface-emitting laser (VCSEL) could potentially improve the laser's side-mode suppression ratio by introducing additional losses to the higher-order modes. This work demonstrates the concept by presenting the results of a 30 nm thin film of Cr deposited on the surface of an implant-confined PhC VCSEL. Both experimental measurements and simulation results are in agreement showing that the single-mode operation is improved at the same injection current ratio relative to threshold.

Development of GaInNAs-based 1.3-μm VCSEL

NASA Astrophysics Data System (ADS)

Ramakrishnan, Arun; Ebbinghaus, G.; Lima, A.; Supper, D.; Kristen, Guenter; Popp, M.; Degen, C.; Althaus, H.-L.; Killer, T.; Scholz, R.; Melinde, M.; Sauter, M.; Weigert, M.; Riechert, Henning; Steinle, Gunther

2003-12-01

In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.

Regular subwavelength surface structures induced by femtosecond laser pulses on stainless steel.

PubMed

Qi, Litao; Nishii, Kazuhiro; Namba, Yoshiharu

2009-06-15

In this research, we studied the formation of laser-induced periodic surface structures on the stainless steel surface using femtosecond laser pulses. A 780 nm wavelength femtosecond laser, through a 0.2 mm pinhole aperture for truncating fluence distribution, was focused onto the stainless steel surface. Under different experimental condition, low-spatial-frequency laser-induced periodic surface structures with a period of 526 nm and high-spatial-frequency laser-induced periodic surface structures with a period of 310 nm were obtained. The mechanism of the formation of laser-induced periodic surface structures on the stainless steel surface is discussed.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Blue laser diode (LD) and light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Bergh, Arpad A.

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

New picosecond laser emitting blue light for use in periodontology

NASA Astrophysics Data System (ADS)

Hennig, Thomas; Nieswand, Elmar; Rechmann, Peter

2001-04-01

Aim of the study was to investigate the impact of a new picosecond laser emitting blue light on tooth surfaces in order to remove calculus. The radiation may be comfortably transmitted via 25 micrometers diameter fiber optics. The resulting fluence at the tooth was found to be to low for ablation of calculus via nonlinear effects. Higher absorption of the 446 nm radiation by calculus compared to heathy tissues can provide preferential heating and evaporation of the calculus. The surface of thick calculus is irregular rough thus comprising a large interface to the surrounding cooling medium contra acting the preferential heating. In summary the study indicates the possibility flat layers of calculus by thermal effects. Carbonization in healthy tissues is the major problem concerning removal of subgingival calculus with thermal effects.

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in futuremore » optical systems.« less

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

GaSb/AlGaSb VCSEL structures and microcavities in the 1.5 μm wavelength range

NASA Astrophysics Data System (ADS)

Koeth, J.; Dietrich, R.; Reithmaier, J. P.; Forchel, A.

Vertical cavity surface emitting laser structures for 1.5 μm wavelength applications were realized by growing AlSb/AlGaSb Bragg mirrors on GaAs substrates with solid source molecular beam epitaxy. Due to the high refractive index contrast between GaSb and AlSb high quality resonators can be made by only 15 layer pairs for each Bragg mirror. Laser operation could be demonstrated by optical pumping with threshold excitation densities of about 500 W/cm2. In laterally deeply etched microcavities with diameters of 5 μm a clear discretization of the optical modes was observed. The lateral confinement effects are compared with results of AlAs/GaAs microcavities designed for 0.9 μm emission wavelength. Due to the longer wavelength a stronger confinement effect can be achieved in AlSb/AlGaSb microcavities for the same lateral dimensions.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Phase locking of stimulated emission from arrays of stripe GaAIAs/GaAs lasers using active directional couplers

NASA Astrophysics Data System (ADS)

Bazarov, A. E.; Goldobin, I. S.; Eliseev, P. G.; Kobilzhanov, O. A.; Pak, G. T.; Petrakova, T. V.; Pushkina, T. N.; Semenov, A. T.

1987-04-01

An experimental study was made of the characteristics of radiation emitted by arrays of stripe injection lasers in the form of coupled symmetric active Y couplers. An output power of 300 mW in one direction was achieved under cw emission conditions. The periodicity of lobes in the angular distribution corresponded to diffraction of radiation from phase-locked sources and the presence of a peak in the direction of the normal to the emitting surface indicated that the radiation from the individual sources was in phase. An output power of 72.5 mW was obtained in the case of single-frequency cw emission (in an external dispersive resonator).

Light emitting fabric for photodynamic treatment of actinic keratosis

NASA Astrophysics Data System (ADS)

Thecua, E.; Vicentini, C.; Vignion, A.-S.; Lecomte, F.; Deleporte, P.; Mortier, L.; Szeimies, R.-M.; Mordon, S.

2017-02-01

The integration of optical fibers into flexible textile structures, by using knitting or weaving processes can allow the development of flexible light sources. The paper aims to present a new technology: Light Emitting Fabrics (LEF), which can be used for example for PDT of Actinic Keratosis in Dermatology. The predetermined macro-bending of optical fibers, led to a homogeneous side emission of light over the entire surface of the fabric. Tests showed that additional curvatures when applying the LEF on non-planar surfaces had no impact on light delivery and proved that LEF can adapt to the human morphology. The ability of the LEF, coupled with a 635nm LASER source, to deliver a homogeneous light to lesions is currently assessed in a clinical trial for the treatment of AK of the scalp by PDT. The low irradiance and progressive activation of the photosensitizer ensure a pain reduction, compared to discomfort levels experienced by patients during a conventional PDT session.

Commercial mode-locked vertical external cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Head, C. Robin; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2017-02-01

In recent years, M Squared Lasers have successfully commercialized a range of mode-locked vertical external cavity surface emitting lasers (VECSELs) operating between 920-1050nm and producing picosecond-range pulses with average powers above 1W at pulse repetition frequencies (PRF) of 200MHz. These laser products offer a low-cost, easy-to-use and maintenance-free tool for the growing market of nonlinear microscopy. However, in order to present a credible alternative to ultrafast Ti-sapphire lasers, pulse durations below 200fs are required. In the last year, efforts have been directed to reduce the pulse duration of the Dragonfly laser system to below 200fs with a target average power above 1W at a PRF of 200MHz. This paper will describe and discuss the latest efforts undertaken to approach these targets in a laser system operating at 990nm. The relatively low PRF operation of Dragonfly lasers represents a challenging requirement for mode-locked VECSELs due to the very short upper state carrier lifetime, on the order of a few nanoseconds, which can lead to double pulsing behavior in longer cavities as the time between consecutive pulses is increased. Most notably, the design of the Dragonfly VECSEL cavity was considerably modified and the laser system extended with a nonlinear pulse stretcher and an additional compression stage. The improved Dragonfly laser system achieved pulse duration as short as 130fs with an average power of 0.85W.

Detection-gap-independent optical sensor design using divergence-beam-controlled slit lasers for wearable devices

NASA Astrophysics Data System (ADS)

Yoon, Young Zoon; Kim, Hyochul; Park, Yeonsang; Kim, Jineun; Lee, Min Kyung; Kim, Un Jeong; Roh, Young-Geun; Hwang, Sung Woo

2016-09-01

Wearable devices often employ optical sensors, such as photoplethysmography sensors, for detecting heart rates or other biochemical factors. Pulse waveforms, rather than simply detecting heartbeats, can clarify arterial conditions. However, most optical sensor designs require close skin contact to reduce power consumption while obtaining good quality signals without distortion. We have designed a detection-gap-independent optical sensor array using divergence-beam-controlled slit lasers and distributed photodiodes in a pulse-detection device wearable over the wrist's radial artery. It achieves high biosignal quality and low power consumption. The top surface of a vertical-cavity surface-emitting laser of 850 nm wavelength was covered by Au film with an open slit of width between 500 nm and 1500 nm, which generated laser emissions across a large divergence angle along an axis orthogonal to the slit direction. The sensing coverage of the slit laser diode (LD) marks a 50% improvement over nonslit LD sensor coverage. The slit LD sensor consumes 100% more input power than the nonslit LD sensor to obtain similar optical output power. The slit laser sensor showed intermediate performance between LD and light-emitting diode sensors. Thus, designing sensors with multiple-slit LD arrays can provide useful and convenient ways for incorporating optical sensors in wrist-wearable devices.

Surface photonic crystal structures for LED emission modification

NASA Astrophysics Data System (ADS)

Uherek, Frantisek; Škriniarová, Jaroslava; Kuzma, Anton; Šušlik, Łuboš; Lettrichova, Ivana; Wang, Dong; Schaaf, Peter

2017-12-01

Application of photonic crystal structures (PhC) can be attractive for overall and local enhancement of light from patterned areas of the light emitting diode (LED) surface. We used interference and near-field scanning optical microscope lithography for patterning of the surface of GaAs/AlGaAs based LEDs emitted at 840 nm. Also new approach with patterned polydimethylsiloxane (PDMS) membrane applied directly on the surface of red emitting LED was investigated. The overall emission properties of prepared LED with patterned structure show enhanced light extraction efficiency, what was documented from near- and far-field measurements.

Texturing of polypropylene (PP) with nanosecond lasers

NASA Astrophysics Data System (ADS)

Riveiro, A.; Soto, R.; del Val, J.; Comesaña, R.; Boutinguiza, M.; Quintero, F.; Lusquiños, F.; Pou, J.

2016-06-01

Polypropylene (PP) is a biocompatible and biostable polymer, showing good mechanical properties that has been recently introduced in the biomedical field for bone repairing applications; however, its poor surface properties due to its low surface energy limit their use in biomedical applications. In this work, we have studied the topographical modification of polypropylene (PP) laser textured with Nd:YVO4 nanosecond lasers emitting at λ = 1064 nm, 532 nm, and 355 nm. First, optical response of this material under these laser wavelengths was determined. The application of an absorbing coating was also studied. The influence of the laser processing parameters on the surface modification of PP was investigated by means of statistically designed experiments. Processing maps to tailor the roughness, and wettability, the main parameters affecting cell adhesion characteristics of implants, were also determined. Microhardness measurements were performed to discern the impact of laser treatment on the final mechanical properties of PP.

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Mode suppression in metal filled photonic crystal vertical cavity lasers

NASA Astrophysics Data System (ADS)

Griffin, Benjamin G.; Arbabi, Amir; Goddard, Lynford L.

2012-03-01

Simulation results for an etched air hole photonic crystal (PhC) vertical cavity surface emitting laser (VCSEL) structure with various thicknesses of metal deposited inside the holes are presented. The higher-order modes of the structure are more spread out than the fundamental mode, and penetrate into the metal-filled holes. Due to the lossy nature of the metal, these higher-order modes experience a greater loss than the fundamental mode, resulting in an enhanced side mode suppression ratio (SMSR). A figure of merit for determining which metals would have the greatest impact on the SMSR is derived and validated using a transmission matrix method calculation. A full three-dimensional simulation of the PhC VCSEL structure is performed using the plane wave admittance method, and SMSRs are calculated for increasing metal thicknesses. Of the metals simulated, chromium provided the greatest SMSR enhancement with more than a 4 dB improvement with 500 nm of metal for an operating current of 12 times threshold.

Glycerol-bonded 3C-SiC nanocrystal solid films exhibiting broad and stable violet to blue-green emission.

PubMed

Wang, J; Xiong, S J; Wu, X L; Li, T H; Chu, Paul K

2010-04-14

We have produced glycerol-bonded 3C-SiC nanocrystal (NC) films, which when excited by photons of different wavelengths, produce strong and tunable violet to blue-green (360-540 nm) emission as a result of the quantum confinement effects rendered by the 3C-SiC NCs. The emission is so intense that the emission spots are visible to the naked eyes. The light emission is very stable and even after storing in air for more than six months, no intensity degradation can be observed. X-ray photoelectron spectroscopy and absorption fine structure measurements indicate that the Si-terminated NC surfaces are completely bonded to glycerol molecules. Calculations of geometry optimization and electron structures based on the density functional theory for 3C-SiC NCs with attached glycerol molecules show that these molecules are bonded on the NCs causing strong surface structural change, while the isolated levels in the conduction band of the bare 3C-SiC NCs are replaced with quasi-continuous bands that provide continuous tunability of the emitted light by changing the frequencies of exciting laser. As an application, we demonstrate the potential of using 3C-SiC NCs to fabricate full-color emitting solid films by incorporating porous silicon.

Bio-optimized energy transfer in densely packed fluorescent protein enables near-maximal luminescence and solid-state lasers.

PubMed

Gather, Malte C; Yun, Seok Hyun

2014-12-08

Bioluminescent organisms are likely to have an evolutionary drive towards high radiance. As such, bio-optimized materials derived from them hold great promise for photonic applications. Here, we show that biologically produced fluorescent proteins retain their high brightness even at the maximum density in solid state through a special molecular structure that provides optimal balance between high protein concentration and low resonance energy transfer self-quenching. Dried films of green fluorescent protein show low fluorescence quenching (-7 dB) and support strong optical amplification (gnet=22 cm(-1); 96 dB cm(-1)). Using these properties, we demonstrate vertical cavity surface emitting micro-lasers with low threshold (<100 pJ, outperforming organic semiconductor lasers) and self-assembled all-protein ring lasers. Moreover, solid-state blends of different proteins support efficient Förster resonance energy transfer, with sensitivity to intermolecular distance thus allowing all-optical sensing. The design of fluorescent proteins may be exploited for bio-inspired solid-state luminescent molecules or nanoparticles.

Bio-optimized energy transfer in densely packed fluorescent protein enables near-maximal luminescence and solid-state lasers

PubMed Central

Gather, Malte C.; Yun, Seok Hyun

2015-01-01

Bioluminescent organisms are likely to have an evolutionary drive towards high radiance. As such, bio-optimized materials derived from them hold great promise for photonic applications. Here we show that biologically produced fluorescent proteins retain their high brightness even at the maximum density in solid state through a special molecular structure that provides optimal balance between high protein concentration and low resonance energy transfer self-quenching. Dried films of green fluorescent protein show low fluorescence quenching (−7 dB) and support strong optical amplification (gnet = 22 cm−1; 96 dB cm−1). Using these properties, we demonstrate vertical cavity surface emitting micro-lasers with low threshold (<100 pJ, outperforming organic semiconductor lasers) and self-assembled all-protein ring lasers. Moreover, solid-state blends of different proteins support efficient Förster resonance energy transfer, with sensitivity to intermolecular distance thus allowing all-optical sensing. The design of fluorescent proteins may be exploited for bio-inspired solid-state luminescent molecules or nanoparticles. PMID:25483850

ARPA/NRL X-Ray Laser Program - Semiannual Technical Report to Defense Advanced Research Projects Agency, 1 January 1975-30 June 1975

DTIC Science & Technology

1975-09-01

being conducted with highly- stripped carbon ions emitted fron a laser -irradiated surface and ^xpandin- into a background gas . The...obtained from reported measurement s of noble gas lasers indicate that the amplifiers will operate in I depletion mode, providing pulse powers in the...pumping appears to be the easier alternative and it will be pursued. The alternative amplifier approach involving electron beam pumped noble gas lasers

New laser surface treatments: cleaning, derusting, deoiling, depainting, deoxidizing, and degreasing

NASA Astrophysics Data System (ADS)

Daurelio, Giuseppe; Chita, Giuseppe; Cinquepalmi, Massimo

1997-08-01

Many materials as substrates and surface products have been tested. Typically ferrous (Carbon Steels and Stainless Steels) and non ferrous (Al and Cu metals and its alloys) ones have been employed. Some epoxy, polyurethane, polyester and acrylic paints in different thickness and color have been tested. Many types of the surface rust and oxide on different bulk material have been undertaken to test. Similarly some different types of oils and greases, usually used in industry against the oxidation, have been studied. Anyway many types of dirt, grit, calcareous one and so on, present on industrial components, have been laser cleaned without using solvents, acid baths and other ones. Different types of laser sources have been employed: an axial fast flow, 1.5 KW CO2 c.w. and pulsed laser source, emitting a 10.6 micrometers beam; a portable CO2 laser, c.w. (1 to 25 W) and pulsed (1 to 100 Hz and 400 ms max pulse duration) source, emitting a 10.6 micrometers beam with a multi-articulated seven mirrors guiding device and focussing head; a portable Nd-YAG laser, Q-switched and normal-mode source. 1st harmonic 1.06 micrometers (6 ns pulse duration), 2nd harmonic 532 nm (120 microsecond(s) duration pulse- 1J max per-pulse) wavelengths, multi-articulated seven mirrors beam guiding device, 20 Hz repetition rate. This lets shots with 600 mJ max energy per pulse and 100 MW peak power per-pulse with a very low beam divergence, 0.5 mrad at full angle; a transverse fast flow 2.5 kW CO2 laser.

A surface plasmon model for laser ablation of Ag sup + ions from a roughened Ag surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ritchie, R.H.; Manson, J.R.; Echenique, P.M.

1991-01-01

Experimental work by Shea and Compton suggests that Ag{sup +} ions emitted from a roughened Ag surface irradiated by a nanosecond or picosecond laser beam may absorb the full energy of the Ag surface plasmon. We have modeled this process under the assumption that it proceeds through an inverse bremsstrahlung-type absorption of the SP quantum by Ag{sup +} ion which also undergoes a small-impact parameter collision with another ion or atom in the vicinity of the surface. We give a quantitative estimate of the absorption probability and find reasonable agreement with the Shea-Compton results. 8 refs., 2 figs.

Laser-induced periodic annular surface structures on fused silica surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yi; Brelet, Yohann; Forestier, Benjamin

2013-06-24

We report on the formation of laser-induced periodic annular surface structures on fused silica irradiated with multiple femtosecond laser pulses. This surface morphology emerges after the disappearance of the conventional laser induced periodic surface structures, under successive laser pulse irradiation. It is independent of the laser polarization and universally observed for different focusing geometries. We interpret its formation in terms of the interference between the reflected laser field on the surface of the damage crater and the incident laser pulse.

The analytical approach to optimization of active region structure of quantum dot laser

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2014-10-01

Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value.

Oxide-apertured VCSEL with short period superlattice

NASA Astrophysics Data System (ADS)

Li, Lin; Zhong, Jingchang; Zhang, Yongming; Su, Wei; Zhao, Yingjie; Yan, Changling; Hao, Yongqin; Jiang, Xiaoguang

2004-12-01

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1)As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2 deg. off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 (Celsius degree) and the threshold current increased slowly with the increase of temperature.

Using a terrestrial laser scanner to measure spatiotemporal surface moisture dynamics

NASA Astrophysics Data System (ADS)

Smit, Y.; Donker, J.; Ruessink, G.

2017-12-01

A terrestrial laser scanner (TLS) is an active remote sensing technique that utilizes the round trip time of an emitted laser beam to provide the range between the laser scanner and the backscattering object. It is routinely used for topographic mapping, forest measurements or 3D city models since it derives useful object representations by means of a dense three-dimensional (3D) point cloud. Here, we present a novel application using the returned intensity of the emitted beam to detect surface moisture with the RIEGL VZ-400. Because this TLS operates at a wavelength near a water absorption band (1550 nm), reflectance is an accurate parameter to measure surface moisture over its full range. Five days of intensive laser scanning were performed on a Dutch beach to illustrate the applicability of the TLS. Concurrent gravimetric surface moisture samples were collected to calibrate the relation between reflectance and surface moisture. Results reveal the reflectance output is a robust parameter to measure surface moisture from the thin upper layer over its full range from 0% to 25%. The obtained calibration curve of the presented TLS, describing the relationship between reflectance and surface moisture, has a root-mean-square error of 2.7% and a correlation coefficient squared of 0.85. This relation holds to about 60 m from the TLS. Within this distance the TLS typically produces O(10^6-10^7) data points, which we averaged into surface moisture maps with a 1 x 1 m resolution. This grid size largely removes small moisture disturbances induced by, for example, footprints or tire tracks, while retaining larger scale trends. Concluding, TLS (RIEGL-VZ 400) is a highly suited technique to accurately and robustly measure spatiotemporal surface moisture variations on a coastal beach with high spatial ( 1 x 1 m) and temporal ( 15-30min.) resolution.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

NASA Astrophysics Data System (ADS)

Sze, Theresa; Mahbobzadeh, A. M.; Cheng, Julian; Hersee, Stephen D.; Osinski, Marek; Brueck, Steven R. J.; Malloy, Kevin J.

1993-06-01

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

Application of erbium: YAG laser in ocular ablation.

PubMed

Tsubota, K

1990-01-01

Recent developments in lasers have provided us the possibility of laser ocular surgery. The xenon, argon, neodymium:YAG and dye lasers have been successfully used in out-patient clinics. The excimer laser has been attracting researchers' interest in the new application of laser to cornea and lens. The erbium:YAG laser emits a 2.94-microns beam that can ablate the transparent ocular tissues such as lenses and corneas. The author has applied this laser to the cornea, lens, vitreous and other ocular tissues. The erbium:YAG laser beam was directed through a 1.5-meter-long, 200-microns-diameter fiberoptic guide. The radiant energy measured about 50 mJ at the end of the probe. The laser was emitted as a 400-microsecond pulse. Freshly enucleated rabbit eyes were used in this study. Laser burns were applied to the tissue surface at various energy settings. At minimal power, the tissues were coagulated by the erbium:YAG laser application. At a power of more than 636-954 mJ/mm2, tissue began to evaporate; the tissue loss was observed under a surgical light microscope. Corneal photoablation, lens ablation, iridotomy, trabeculotomy, cutting of the vitreous and retinal ablation were easily performed. Like the excimer laser, the erbium:YAG laser is a potential tool for ocular surgery.

Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

PubMed

Granero, Luis; Zalevsky, Zeev; Micó, Vicente

2011-04-01

We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

PubMed

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

2018-02-01

In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

Light and scanning electron microscope investigations comparing calculus removal using an Er:YAG laser and a frequency-doubled alexandrite laser

NASA Astrophysics Data System (ADS)

Rechmann, Peter; Hennig, Thomas; Sadegh, Hamid M. M.; Goldin, Dan S.

1997-05-01

With respect to lasers emitting within the mid-IR spectral domain fiber applicators are being developed. Intended is the use of these lasers in periodontal therapy and their application inside the gingival pocket. Aim of the study presented here is to compare the effect of an Er:YAG laser on dental calculus with the results following irradiation with a frequency doubled Alexandrite laser. The surface of freshly extracted wisdom teeth and of extracted teeth suffering from severe periodontitis were irradiated with both laser wavelengths using a standardized application protocol. Calculus on the enamel surface, at the enamel cementum junction and on the root surface was irradiated. For light microscope investigations undecalcified histological sections were prepared after treatment. For the scanning electron microscope teeth were dried in alcohol and sputtered with gold. Investigations revealed that with both laser systems calculus can be removed. Using the frequency doubled Alexandrite laser selective removal of calculus is possible while engaging the Er:YAG laser even at lowest energies necessary for calculus removal healthy cementum is ablated without control.

Spectral and Radiometric Calibration Using Tunable Lasers

NASA Technical Reports Server (NTRS)

McCorkel, Joel (Inventor)

2017-01-01

A tunable laser system includes a tunable laser, an adjustable laser cavity for producing one or more modes of laser light emitted from the tunable laser, a first optical parametric oscillator positioned in a light path of the adjustable laser cavity, and a controller operable to simultaneously control parameters of at least the tunable laser, the first optical parametric oscillator, and the adjustable laser cavity to produce a range of wavelengths emitted from the tunable laser system. A method of operating a tunable laser system includes using a controller to simultaneously control parameters of a tunable laser, an adjustable laser cavity for producing one or more modes of laser light emitted from the tunable laser, and a first optical parametric oscillator positioned in a light path of the adjustable laser cavity, to produce a range of wavelengths emitted from the tunable laser system.

Design and analysis of control system for VCSEL of atomic interference magnetometer

NASA Astrophysics Data System (ADS)

Zhang, Xiao-nan; Sun, Xiao-jie; Kou, Jun; Yang, Feng; Li, Jie; Ren, Zhang; Wei, Zong-kang

2016-11-01

Magnetic field detection is an important means of deep space environment exploration. Benefit from simple structure and low power consumption, atomic interference magnetometer become one of the most potential detector payloads. Vertical Cavity Surface Emitting Laser (VCSEL) is usually used as a light source in atomic interference magnetometer and its frequency stability directly affects the stability and sensitivity of magnetometer. In this paper, closed-loop control strategy of VCSEL was designed and analysis, the controller parameters were selected and the feedback error algorithm was optimized as well. According to the results of experiments that were performed on the hardware-in-the-loop simulation platform, the designed closed-loop control system is reasonable and it is able to effectively improve the laser frequency stability during the actual work of the magnetometer.

Fundamentals and industrial applications of ultrashort pulsed lasers at Bosch

NASA Astrophysics Data System (ADS)

König, Jens; Bauer, Thorsten

2011-03-01

Fundamental results of ablation processes of metals with ultrashort laser pulses in the far threshold fluence regime are shown and discussed. Time-resolved measurements of the plasma transmission exhibit two distinctive minima. The minima occurring within the first nanoseconds can be attributed to electrons and sublimated material emitted from the target surface, whereas the subsequent minimum after several 10 ns is due to particles and droplets after a thermal boiling process. Industrial applications of ultrashort pulsed laser micro machining in the Bosch Group are also shown with the production of exhaust gas sensors and common rail diesel systems. Since 2007, ultrashort laser pulses are used at the BOSCH plant in Bamberg for producing lambda-probes, which are made of a special ceramic layer system and can measure the exhaust gas properties faster and more accurately. This enables further reduction of emissions by optimized combustion control. Since 2009, BOSCH uses ultrashort pulsed lasers for micro-structuring the injector of common rail diesel systems. A drainage groove allows a tight system even at increased pressures up to 2000 bar. Diesel injection is thus even more reliable, powerful and environment-friendly.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} atmore » 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.« less

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

NASA Astrophysics Data System (ADS)

Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

2018-03-01

We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

NASA Astrophysics Data System (ADS)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

Amplification of pressure waves in laser-assisted endodontics with synchronized delivery of Er:YAG laser pulses.

PubMed

Lukač, Nejc; Jezeršek, Matija

2018-05-01

When attempting to clean surfaces of dental root canals with laser-induced cavitation bubbles, the resulting cavitation oscillations are significantly prolonged due to friction on the cavity walls and other factors. Consequently, the collapses are less intense and the shock waves that are usually emitted following a bubble's collapse are diminished or not present at all. A new technique of synchronized laser-pulse delivery intended to enhance the emission of shock waves from collapsed bubbles in fluid-filled endodontic canals is reported. A laser beam deflection probe, a high-speed camera, and shadow photography were used to characterize the induced photoacoustic phenomena during synchronized delivery of Er:YAG laser pulses in a confined volume of water. A shock wave enhancing technique was employed which consists of delivering a second laser pulse at a delay with regard to the first cavitation bubble-forming laser pulse. Influence of the delay between the first and second laser pulses on the generation of pressure and shock waves during the first bubble's collapse was measured for different laser pulse energies and cavity volumes. Results show that the optimal delay between the two laser pulses is strongly correlated with the cavitation bubble's oscillation period. Under optimal synchronization conditions, the growth of the second cavitation bubble was observed to accelerate the collapse of the first cavitation bubble, leading to a violent collapse, during which shock waves are emitted. Additionally, shock waves created by the accelerated collapse of the primary cavitation bubble and as well of the accompanying smaller secondary bubbles near the cavity walls were observed. The reported phenomena may have applications in improved laser cleaning of surfaces during laser-assisted dental root canal treatments.

Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

NASA Astrophysics Data System (ADS)

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

2018-03-01

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

Infrared emitting device and method

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

1997-01-01

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Wavelength stabilized high pulse power laser diodes for automotive LiDAR

NASA Astrophysics Data System (ADS)

Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

2018-03-01

Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

Ultrafast Laser Beam Switching and Pulse Train Generation by Using Coupled Vertical-Cavity, Surface-Emitting Lasers (VCSELS)

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor); Ning, Cun-Zheng (Inventor)

2005-01-01

Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

NASA Astrophysics Data System (ADS)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Ultrafast Beam Switching Using Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The strategy is demonstrated by numerical simulation, showing a beam switching of 10 deg at 42 GHz.

Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures

NASA Astrophysics Data System (ADS)

Chen, G.; Tien, C. L.; Wu, X.; Smith, J. S.

1994-05-01

This work develops a new measurement technique that determines the thermal diffusivity of thin films in both parallel and perpendicular directions, and presents experimental results on the thermal diffusivity of GaAs/AlGaAs-based thin-film structures. In the experiment, a modulated laser source heats up the sample and a fast-response temperature sensor patterned directly on the sample picks up the thermal response. From the phase delay between the heating source and the temperature sensor, the thermal diffusivity in either the parallel or perpendicular direction is obtained depending on the experimental configuration. The experiment is performed on a molecular-beam-epitaxy grown vertical-cavity surface-emitting laser (VCSEL) structure. The substrates of the samples are etched away to eliminate the effects of the interface between the film and the substrate. The results show that the thermal diffusivity of the VCSEL structure is 5-7 times smaller than that of its corresponding bulk media. The experiments also provide evidence on the anisotropy of thermal diffusivity caused solely by the effects of interfaces and boundaries of thin films.

High power high repetition rate VCSEL array side-pumped pulsed blue laser

NASA Astrophysics Data System (ADS)

van Leeuwen, Robert; Zhao, Pu; Chen, Tong; Xu, Bing; Watkins, Laurence; Seurin, Jean-Francois; Xu, Guoyang; Miglo, Alexander; Wang, Qing; Ghosh, Chuni

2013-03-01

High power, kW-class, 808 nm pump modules based on the vertical-cavity surface-emitting laser (VCSEL) technology were developed for side-pumping of solid-state lasers. Two 1.2 kW VCSEL pump modules were implemented in a dual side-pumped Q-switched Nd:YAG laser operating at 946 nm. The laser output was frequency doubled in a BBO crystal to produce pulsed blue light. With 125 μs pump pulses at a 300 Hz repetition rate 6.1 W QCW 946 nm laser power was produced. The laser power was limited by thermal lensing in the Nd:YAG rod.

The simulation study on optical target laser active detection performance

NASA Astrophysics Data System (ADS)

Li, Ying-chun; Hou, Zhao-fei; Fan, Youchen

2014-12-01

According to the working principle of laser active detection system, the paper establishes the optical target laser active detection simulation system, carry out the simulation study on the detection process and detection performance of the system. For instance, the performance model such as the laser emitting, the laser propagation in the atmosphere, the reflection of optical target, the receiver detection system, the signal processing and recognition. We focus on the analysis and modeling the relationship between the laser emitting angle and defocus amount and "cat eye" effect echo laser in the reflection of optical target. Further, in the paper some performance index such as operating range, SNR and the probability of the system have been simulated. The parameters including laser emitting parameters, the reflection of the optical target and the laser propagation in the atmosphere which make a great influence on the performance of the optical target laser active detection system. Finally, using the object-oriented software design methods, the laser active detection system with the opening type, complete function and operating platform, realizes the process simulation that the detection system detect and recognize the optical target, complete the performance simulation of each subsystem, and generate the data report and the graph. It can make the laser active detection system performance models more intuitive because of the visible simulation process. The simulation data obtained from the system provide a reference to adjust the structure of the system parameters. And it provides theoretical and technical support for the top level design of the optical target laser active detection system and performance index optimization.

Simulation of laser beam reflection at the sea surface

NASA Astrophysics Data System (ADS)

Schwenger, Frédéric; Repasi, Endre

2011-05-01

A 3D simulation of the reflection of a Gaussian shaped laser beam on the dynamic sea surface is presented. The simulation is suitable for both the calculation of images of SWIR (short wave infrared) imaging sensor and for determination of total detected power of reflected laser light for a bistatic configuration of laser source and receiver at different atmospheric conditions. Our computer simulation comprises the 3D simulation of a maritime scene (open sea/clear sky) and the simulation of laser light reflected at the sea surface. The basic sea surface geometry is modeled by a composition of smooth wind driven gravity waves. The propagation model for water waves is applied for sea surface animation. To predict the view of a camera in the spectral band SWIR the sea surface radiance must be calculated. This is done by considering the emitted sea surface radiance and the reflected sky radiance, calculated by MODTRAN. Additionally, the radiances of laser light specularly reflected at the wind-roughened sea surface are modeled in the SWIR band considering an analytical statistical sea surface BRDF (bidirectional reflectance distribution function). This BRDF model considers the statistical slope statistics of waves and accounts for slope-shadowing of waves that especially occurs at flat incident angles of the laser beam and near horizontal detection angles of reflected irradiance at rough seas. Simulation results are presented showing the variation of the detected laser power dependent on the geometric configuration of laser, sensor and wind characteristics.

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown narrow spectral linewidths of 7-10 nm, extracted light output power in the range of 200-300 muW, and modulation speed up to 300 MHz. This is the first demonstration of 1.3 muRCLEDs on GaAs substrates with performance comparable to InP based surface-emitting LEDs.

Modeling quantum yield, emittance, and surface roughness effects from metallic photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dimitrov, D. A.; Bell, G. I.; Smedley, J.

Here, detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on themore » properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data.« less

Modeling quantum yield, emittance, and surface roughness effects from metallic photocathodes

DOE PAGES

Dimitrov, D. A.; Bell, G. I.; Smedley, J.; ...

2017-10-26

Here, detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on themore » properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data.« less

LDEF active optical system components experiment

NASA Technical Reports Server (NTRS)

Blue, M. D.

1992-01-01

A preliminary report on the Active Optical System Components Experiment is presented. This experiment contained 136 components in a six inch deep tray including lasers, infrared detectors and arrays, ultraviolet light detectors, light-emitting diodes, a light modulator, flash lamps, optical filters, glasses, and samples of surface finishes. Thermal, mechanical, and structural considerations leading to the design of the tray hardware are discussed. In general, changes in the retested component characteristics appear as much related to the passage of time as to the effects of the space environment, but organic materials, multilayer optical interference filters, and extreme-infrared reflectivity of black paints show unexpected changes.

Selective Photophysical Modification on Light-Emitting Polymer Films for Micro- and Nano-Patterning

PubMed Central

Zhang, Xinping; Liu, Feifei; Li, Hongwei

2016-01-01

Laser-induced cross-linking in polymeric semiconductors was utilized to achieve micro- and nano-structuring in thin films. Single- and two-photon cross-linking processes led to the reduction in both the refractive index and thickness of the polymer films. The resultant photonic structures combine the features of both relief- and phase-gratings. Selective cross-linking in polymer blend films based on different optical response of different molecular phases enabled “solidification” of the phase-separation scheme, providing a stable template for further photonic structuring. Dielectric and metallic structures are demonstrated for the fabrication methods using cross-linking in polymer films. Selective cross-linking enables direct patterning into polymer films without introducing additional fabrication procedures or additional materials. The diffraction processes of the emission of the patterned polymeric semiconductors may provide enhanced output coupling for light-emitting diodes or distributed feedback for lasers. PMID:28773248

Acicular photomultiplier photocathode structure

DOEpatents

Craig, Richard A.; Bliss, Mary

2003-09-30

A method and apparatus for increasing the quantum efficiency of a photomultiplier tube by providing a photocathode with an increased surface-to-volume ratio. The photocathode includes a transparent substrate, upon one major side of which is formed one or more large aspect-ratio structures, such as needles, cones, fibers, prisms, or pyramids. The large aspect-ratio structures are at least partially composed of a photoelectron emitting material, i.e., a material that emits a photoelectron upon absorption of an optical photon. The large aspect-ratio structures may be substantially composed of the photoelectron emitting material (i.e., formed as such upon the surface of a relatively flat substrate) or be only partially composed of a photoelectron emitting material (i.e., the photoelectron emitting material is coated over large aspect-ratio structures formed from the substrate material itself.) The large aspect-ratio nature of the photocathode surface allows for an effective increase in the thickness of the photocathode relative the absorption of optical photons, thereby increasing the absorption rate of incident photons, without substantially increasing the effective thickness of the photocathode relative the escape incidence of the photoelectrons.

VCSEL Applications and Simulation

NASA Technical Reports Server (NTRS)

Cheung, Samson; Goorjian, Peter; Ning, Cun-Zheng; Li, Jian-Zhong

2000-01-01

This viewgraph presentation gives an overview of Vertical Cavity Surface Emitting Laser (VCSEL) simulation and its applications. Details are given on the optical interconnection in information technology of VCSEL, the formulation of the simulation, its numeric algorithm, and the computational results.

Annihilation of positronium atoms confined in mesoporous and macroporous SiO2 films

NASA Astrophysics Data System (ADS)

Cooper, B. S.; Boilot, J.-P.; Corbel, C.; Guillemot, F.; Gurung, L.; Liszkay, L.; Cassidy, D. B.

2018-05-01

We report experiments in which positronium (Ps) atoms were created in thin, porous silica films containing isolated voids with diameters ranging from 5 to 75 nm. Ps lifetimes in the pore structures were measured directly via time-delayed laser excitation of 13S1→23PJ transitions. In a film containing 5-nm pores Ps was predominantly emitted into vacuum, with a small component of confined Ps with a lifetime of 75 ns also observed. In films with larger pores Ps atoms were not emitted into vacuum except from the film surface, and confined Ps lifetimes of ≈90 ns were measured with no dependence on the pore size. However, for such large pores, extended Tao-Eldrup (ETE)-type models predict Ps lifetimes close to the 142-ns vacuum value. Moreover, 13S1→23PJ excitation of Ps atoms inside the pores was found to result in annihilation and exhibited an extremely broad (≈10 THz) linewidth. We attribute these observations to a process in which nonthermal Ps atoms in the isolated voids become temporarily trapped in a series of surface states that dissociate following excitation. The occurrence of this mechanism is not necessarily apparent from ground-state Ps decay rates without some prior knowledge of the sample structure, and it precludes the application of ETE-type models as they do not take into account surface interactions other than pickoff annihilation.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

NASA Astrophysics Data System (ADS)

Choi, Woo June; Wang, Ruikang K.

2015-10-01

We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

Vertical-cavity surface-emitting lasers: the applications

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.; Liu, Yue; Bristow, Julian P. G.

1997-05-01

In this paper, we focus on how vertical-cavity surface- emitting lasers (VCSELs) and arrays have led to many feasible advanced technological applications. Their intrinsic characteristics, performance, and producibility offer substantial advantages over alternative sources. Demonstrated performance of `commercial-grade' VCSELs include low operating powers (< 2 V, mAs), high speeds (3 dB BWs > 15 GHz), and high temperature operating ranges (10 K to 400 K and -55 degree(s)C to 125 degree(s)C, and T > 200 degree(s)C). Moreover, their robustness is manifest by high reliability in excess of 107 hours mean time between failures at room temperature and tenfold improvement over existing rad-hard LEDs. Hence, even these `commercial-grade' VCSELs offer potential within cryogenic and avionics/military or space environments. We have also demonstrated submilliamp ITH, stable, single-mode VCSELs utilized within bias-free 1-Gbit/s data links. These low- power VCSELs may also serve in applications from printers to low-cost atomic clocks. The greatest near-term VCSEL applications are upgrades to low-cost LEDs and high-grade copper wire in data links and sensors. Exploiting their surface-emitting geometry, VCSELs are also compatible with established multichip module packaging. Hence VCSELs and VCSEL arrays are ideal components for interconnect-intensive processing applications between and within computing systems.

Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin

2011-09-01

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth:more » (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.« less

Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

NASA Astrophysics Data System (ADS)

O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

2017-02-01

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Phase noise analysis of a 10-GHz optical injection-locked vertical-cavity surface-emitting laser-based optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Coronel, Juan; Varón, Margarita; Rissons, Angélique

2016-09-01

The optical injection locking (OIL) technique is proposed to reduce the phase noise of a carrier generated for a vertical-cavity surface-emitting laser (VCSEL)-based optoelectronic oscillator. The OIL technique permits the enhancement of the VCSEL direct modulation bandwidth as well as the stabilization of the optical noise of the laser. A 2-km delay line, 10-GHz optical injection-locked VCSEL-based optoelectronic oscillator (OILVBO) was implemented. The internal noise sources of the optoelectronic oscillator components were characterized and analyzed to understand the noise conversion of the system into phase noise in the oscillator carrier. The implemented OILVBO phase noise was -105.7 dBc/Hz at 10 kHz from the carrier; this value agrees well with the performed simulated analysis. From the computed and measured phase noise curves, it is possible to infer the noise processes that take place inside the OILVBO. As a second measurement of the oscillation quality, a time-domain analysis was done through the Allan's standard deviation measurement, reported for first time for an optoelectronic oscillator using the OIL technique.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Noseleaf dynamics during pulse emission in horseshoe bats.

PubMed

Feng, Lin; Gao, Li; Lu, Hongwang; Müller, Rolf

2012-01-01

Horseshoe bats emit their biosonar pulses nasally and diffract the outgoing ultrasonic waves by conspicuous structures that surrounded the nostrils. Here, we report quantitative experimental data on the motion of a prominent component of these structures, the anterior leaf, using synchronized laser Doppler vibrometry and acoustic recordings in the greater horseshoe bat (Rhinolophus ferrumequinum). The vibrometry data has demonstrated non-random motion patterns in the anterior leaf. In these patterns, the outer rim of the walls of the anterior leaf twitches forward and inwards to decrease the aperture of the noseleaf and increase the curvature of its surfaces. Noseleaf displacements were correlated with the emitted ultrasonic pulses. After their onset, the inward displacements increased monotonically towards their maximum value which was always reached within the duration of the biosonar pulse, typically towards its end. In other words, the anterior leaf's surfaces were moving inwards during most of the pulse. Non-random motions were not present in all recorded pulse trains, but could apparently be switched on or off. Such switches happened between sequences of consecutive pulses but were never observed between individual pulses within a sequence. The amplitudes of the emitted biosonar pulse and accompanying noseleaf movement were not correlated in the analyzed data set. The measured velocities of the noseleaf surface were too small to induce Doppler shifts of a magnitude with a likely significance. However, the displacement amplitudes were significant in comparison with the overall size of the anterior leaf and the sound wavelengths. These results indicate the possibility that horseshoe bats use dynamic sensing principles on the emission side of their biosonar system. Given the already available evidence that such mechanisms exist for biosonar reception, it may be hypothesized that time-variant mechanisms play a pervasive role in the biosonar sensing of horseshoe bats.

Noseleaf Dynamics during Pulse Emission in Horseshoe Bats

PubMed Central

Feng, Lin; Gao, Li; Lu, Hongwang; Müller, Rolf

2012-01-01

Horseshoe bats emit their biosonar pulses nasally and diffract the outgoing ultrasonic waves by conspicuous structures that surrounded the nostrils. Here, we report quantitative experimental data on the motion of a prominent component of these structures, the anterior leaf, using synchronized laser Doppler vibrometry and acoustic recordings in the greater horseshoe bat (Rhinolophus ferrumequinum). The vibrometry data has demonstrated non-random motion patterns in the anterior leaf. In these patterns, the outer rim of the walls of the anterior leaf twitches forward and inwards to decrease the aperture of the noseleaf and increase the curvature of its surfaces. Noseleaf displacements were correlated with the emitted ultrasonic pulses. After their onset, the inward displacements increased monotonically towards their maximum value which was always reached within the duration of the biosonar pulse, typically towards its end. In other words, the anterior leaf’s surfaces were moving inwards during most of the pulse. Non-random motions were not present in all recorded pulse trains, but could apparently be switched on or off. Such switches happened between sequences of consecutive pulses but were never observed between individual pulses within a sequence. The amplitudes of the emitted biosonar pulse and accompanying noseleaf movement were not correlated in the analyzed data set. The measured velocities of the noseleaf surface were too small to induce Doppler shifts of a magnitude with a likely significance. However, the displacement amplitudes were significant in comparison with the overall size of the anterior leaf and the sound wavelengths. These results indicate the possibility that horseshoe bats use dynamic sensing principles on the emission side of their biosonar system. Given the already available evidence that such mechanisms exist for biosonar reception, it may be hypothesized that time-variant mechanisms play a pervasive role in the biosonar sensing of horseshoe bats. PMID:22574110

An accurate laser radiometer for determining visible exposure times.

PubMed

Royston, D D

1985-01-01

A laser light radiometer has been developed for the Electro-Optics Branch of the Center for Devices and Radiological Health (CDRH). The radiometer measures direct laser radiation emitted in the visible spectrum. Based upon this measurement, the instrument's microprocessor automatically determines at what time duration the exposure to the measured laser radiation would exceed either the class I accessible emission limits of the Federal Performance Standard for laser products or the maximum permissible exposure limits of laser user safety standards. The instrument also features automatic background level compensation, pulse measurement capability, and self-diagnosis. Measurement of forward surface illumination levels preceding HpD photoradiation therapy is possible.

Laser-photofield emission from needle cathodes for low-emittance electron beams.

PubMed

Ganter, R; Bakker, R; Gough, C; Leemann, S C; Paraliev, M; Pedrozzi, M; Le Pimpec, F; Schlott, V; Rivkin, L; Wrulich, A

2008-02-15

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.

Self-Sustained Ultrafast Pulsation in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng

2001-01-01

High frequency, narrow-band self-pulsating operation is demonstrated in two coupled vertical-cavity surface-emitting lasers (VCSELs). The coupled VCSELs provide an ideal source for high-repetition rate (over 40 GHz), sinusoidal-like modulated laser source with Gaussian-like near- and far-field profiles. We also show that the frequency of the modulation can be tuned by the inter-VCSEL separation or by DC-bias level.

Wavelength shift in vertical cavity laser arrays on a patterned substrate

NASA Astrophysics Data System (ADS)

Eng, L. E.; Bacher, K.; Yuen, W.; Larson, M.; Ding, G.; Harris, J. S., Jr.; Chang-Hasnain, C. J.

1995-03-01

The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al(0.2)Ga(0.8)As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array.

Vertical cavity surface emitting lasers based on InP and related compounds -- Bottleneck and corkscrew

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iga, K.

1996-12-31

Vertical optical interconnects of LSI chips and circuit boards and multiple fiber systems may be the most interesting field related to SE lasers. From this point of view, the device should be small as possible. The future process technology for it including epitaxy and etching will drastically change the situation of SE lasers. Dome optical technologies are already introduced in various subsystems, but the arrayed microoptic technology would be very helpful for advanced systems.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Electrically-pumped 850-nm micromirror VECSELs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith

Vertical-external-cavity surface-emitting lasers (VECSELs) combine high optical power and good beam quality in a device with surface-normal output. In this paper, we describe the design and operating characteristics of an electrically-pumped VECSEL that employs a wafer-scale fabrication process and operates at 850 nm. A curved micromirror output coupler is heterogeneously integrated with AlGaAs-based semiconductor material to form a compact and robust device. The structure relies on flip-chip bonding the processed epitaxial material to an aluminum nitride mount; this heatsink both dissipates thermal energy and permits high frequency modulation using coplanar traces that lead to the VECSEL mesa. Backside emission ismore » employed, and laser operation at 850 nm is made possible by removing the entire GaAs substrate through selective wet etching. While substrate removal eliminates absorptive losses, it simultaneously compromises laser performance by increasing series resistance and degrading the spatial uniformity of current injection. Several aspects of the VECSEL design help to mitigate these issues, including the use of a novel current-spreading n type distributed Bragg reflector (DBR). Additionally, VECSEL performance is improved through the use of a p-type DBR that is modified for low thermal resistance.« less

Electrically pumped 850-nm micromirror VECSELs

NASA Astrophysics Data System (ADS)

Keeler, Gordon A.; Serkland, Darwin K.; Geib, Kent M.; Peake, Gregory M.; Mar, Alan

2005-03-01

Vertical-external-cavity surface-emitting lasers (VECSELs) combine high optical power and good beam quality in a device with surface-normal output. In this paper, we describe the design and operating characteristics of an electrically-pumped VECSEL that employs a wafer-scale fabrication process and operates at 850 nm. A curved micromirror output coupler is heterogeneously integrated with AlGaAs-based semiconductor material to form a compact and robust device. The structure relies on flip-chip bonding the processed epitaxial material to an aluminum nitride mount; this heatsink both dissipates thermal energy and permits high frequency modulation using coplanar traces that lead to the VECSEL mesa. Backside emission is employed, and laser operation at 850 nm is made possible by removing the entire GaAs substrate through selective wet etching. While substrate removal eliminates absorptive losses, it simultaneously compromises laser performance by increasing series resistance and degrading the spatial uniformity of current injection. Several aspects of the VECSEL design help to mitigate these issues, including the use of a novel current-spreading n type distributed Bragg reflector (DBR). Additionally, VECSEL performance is improved through the use of a p-type DBR that is modified for low thermal resistance.

The influence of post-deposition annealing on the structure, morphology and luminescence properties of pulsed laser deposited La0.5Gd1.5SiO5 doped Dy3+ thin films

NASA Astrophysics Data System (ADS)

Ogugua, Simon N.; Swart, Hendrik C.; Ntwaeaborwa, Odireleng M.

2018-04-01

The influence of post-deposition annealing on the structure, particle morphology and photoluminescence properties of dysprosium (Dy3+) doped La0.5Gd1.5SiO5 thin films grown on Si(111) substrates at different substrate temperatures using pulsed laser deposition (PLD) technique were studied. The X-ray diffractometer results showed an improved crystallinity after post-annealing. The topography and morphology of the post-annealed films were studied using atomic force microscopy and field emission scanning electron microscopy respectively. The elemental composition in the surface region of the films were analyzed using energy dispersive X-ray spectroscopy. The photoluminescence studies showed an improved luminescent after post-annealing. The cathodoluminescence properties of the films are also reported. The CIE colour coordinates calculated from the photoluminescence and cathodoluminescence data suggest that the films can have potential application in white light emitting diode (LED) and field emission display (FED) applications.

Optically pumped VECSELs: review of technology and progress

NASA Astrophysics Data System (ADS)

Guina, M.; Rantamäki, A.; Härkönen, A.

2017-09-01

Vertical-external-cavity surface-emitting lasers (VECSELs) are the most versatile laser sources, combining unique features such as wide spectral coverage, ultrashort pulse operation, low noise properties, high output power, high brightness and compact form-factor. This paper reviews the recent technological developments of VECSELs in connection with the new milestones that continue to pave the way towards their use in numerous applications. Significant attention is devoted to the fabrication of VECSEL gain mirrors in challenging wavelength regions, especially at the yellow and red wavelengths. The reviewed fabrication approaches address wafer-bonded VECSEL structures as well as the use of hybrid mirror structures. Moreover, a comprehensive summary of VECSEL characterization methods is presented; the discussion covers different stages of VECSEL development and different operation regimes, pointing out specific characterization techniques for each of them. Finally, several emerging applications are discussed, with emphasis on the unique application objectives that VECSELs render possible, for example in atom and molecular physics, dermatology and spectroscopy.

Long-wavelength VCSELs: Power-efficient answer

NASA Astrophysics Data System (ADS)

Kapon, Eli; Sirbu, Alexei

2009-01-01

The commercialization of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) is gaining new momentum as the telecoms market shifts from long-haul applications to local and access networks. These small, power-efficient devices offer several advantages over traditional edge-emitters.

Effect of scanning velocity on femtosecond laser-induced periodic surface structures on HgCdTe crystal

NASA Astrophysics Data System (ADS)

Gu, Hongan; Dai, Ye; Wang, Haodong; Yan, Xiaona; Ma, Guohong

2017-12-01

In this paper, a femtosecond laser line-scanning irradiation was used to induce the periodic surface microstructure on HgCdTe crystal. Low spatial frequency laser induced periodic surface structures of 650-770 nm and high spatial frequency laser induced periodic surface structures of 152-246 nm were respectively found with different scanning speeds. The evolution process from low spatial frequency laser induced periodic surface structures to high spatial frequency laser induced periodic surface structures is characterized by scanning electron microscope. Their spatial periods deduced by using a two-dimensional Fourier transformation partly agree with the predictions of the Sipe-Drude theory. Confocal micro-Raman spectral show that the atomic arrangement of induced low spatial frequency laser-induced structures are basically consistent with the crystal in the central area of laser-scanning line, however a new peak at 164 cm-1 for the CdTe-like mode becomes evident due to the Hg vaporization when strong laser ablation happens. The obtained surface periodic ripples may have applications in fabricating advanced infrared detector.

Laser Infrared Desorption Spectroscopy to Detect Complex Organic Molecules on Icy Planetary Surfaces

NASA Technical Reports Server (NTRS)

Sollit, Luke S.; Beegle, Luther W.

2008-01-01

Laser Desorption-Infrared Spectroscopy (LD-IR) uses an IR laser pulse to desorb surface materials while a spectrometer measures the emission spectrum of the desorbed materials (Figure 1). In this example, laser desorption operates by having the incident laser energy absorbed by near surface material (10 microns in depth). This desorption produces a plume that exists in an excited state at elevated temperatures. A natural analog for this phenomenon can be observed when comets approach the sun and become active and individual molecular emission spectra can be observed in the IR [1,2,3,4,5]. When this occurs in comets, the same species that initially emit radiation down to the ground state are free to absorb it, reducing the amount of detectable emission features. The nature of our technique results in absorption not occurring, because the laser pulse could easily be moved away form the initial desorption plume, and still have better spatial resolution then reflectance spectroscopy. In reflectance spectroscopy, trace components have a relatively weak signal when compared to the entire active nature of the surface. With LDIR, the emission spectrum is used to identify and analyze surface materials.

Cavity Solitons in Vertical Cavity Surface Emitting Lasers and their Applications

NASA Astrophysics Data System (ADS)

Giudici, Massimo; Pedaci, Francesco; Caboche, Emilie; Genevet, Patrice; Barland, Stephane; Tredicce, Jorge; Tissoni, Giovanna; Lugiato, Luigi

Cavity solitons (CS) are single peak localized structures which form over a homogeneous background in the section of broad-area non linear resonator driven by a coherent holding beam. They can be switched on and off by shining a writing/ erasing local laser pulse into the optical cavity. Moreover, when a phase or amplitude gradient is introduced in the holding beam, CS are set in motion along the gradient with a speed that depends on gradient strength. The ability to address CS and to control their location as well as their motion makes them interesting for alloptical processing units. In this chapter we report on several functionalities of CS that have been experimentally implemented in a Vertical Cavity Surface Emitting Laser (VCSEL) biased below threshold. We show that CS positions in the transverse section of the resonator can be reconfigured according to a phase landscape introduced in the holding beam. CS drifting propelled by a phase gradient in the holding beam can be used for realizing an all-optical delay line. Information bits are written in form of CS at a point of the device and a time delayed version of the written information can be read elsewhere along the gradient direction. CS existence and functionalities are deeply affected by presence of device defects generated during the fabrication process and randomly distributed through the device section. The sensitivity of CS to parameters gradients can be used to probe these defects, otherwise not detectable, and mapping their positions. Finally, a periodic flow of moving CS can be obtained by the interplay between a device defect and an external parameter gradient. This suggests the possibility of engineering a CS source directly onto the device.

Compact clumps of dark matter near the solar surface

NASA Astrophysics Data System (ADS)

Pokrovsky, Yu. E.

2018-01-01

The solar surface oscillations observed in the Crimean Astrophysical Observatory (CrAO) at the frequency 104.1890 μHz and in the Solar and Heliospheric Observatory (SoHO) at 220.72 μHz are considered as a result of existence of Compact Clumps of Dark Matter (CCDM) at orbits near the solar surface. These CCDM have to emit Gravitational Waves (GW) which are estimated to be the most intensive ones expected in the vicinity of the Earth and can be easily detected in the near future by means of the Evolved Laser Interferometer Space Antenna (eLISA). In addition to CCDMCrAO and CCDMSoHO some other CCDM may exist in the solar structure. It is shown that GW radiated by most of these CCDM could be detected by eLISA even if the respective solar surface oscillations are too small to be observed.

System and method for laser assisted sample transfer to solution for chemical analysis

DOEpatents

Van Berkel, Gary J; Kertesz, Vilmos

2014-01-28

A system and method for laser desorption of an analyte from a specimen and capturing of the analyte in a suspended solvent to form a testing solution are described. The method can include providing a specimen supported by a desorption region of a specimen stage and desorbing an analyte from a target site of the specimen with a laser beam centered at a radiation wavelength (.lamda.). The desorption region is transparent to the radiation wavelength (.lamda.) and the sampling probe and a laser source emitting the laser beam are on opposite sides of a primary surface of the specimen stage. The system can also be arranged where the laser source and the sampling probe are on the same side of a primary surface of the specimen stage. The testing solution can then be analyzed using an analytical instrument or undergo further processing.

Rapid laser fabrication of microlens array using colorless liquid photopolymer for AMOLED devices

NASA Astrophysics Data System (ADS)

Kim, Kwang-Ryul; Jeong, Han-Wook; Lee, Kong-Soo; Yi, Junsin; Yoo, Jae-Chern; Cho, Myung-Woo; Cho, Sung-Hak; Choi, Byoungdeog

2011-01-01

Microlens array (MLA) is microfabricated using Ultra Violet (UV) laser for display device applications. A colorless liquid photopolymer, Norland Optical Adhesive (NOA) 60, is spin-coated and pre-cured via UV light for completing the laser process. The laser energy controlled by a galvano scanner is radiated on the surface of the NOA 60. A rapid thermal volume expansion inside the material creates microlens array when the Gaussian laser energy is absorbed. The fabrication process conditions for various shapes and densities of MLA using a non-contact surface profiler are investigated. Furthermore, we analyze the optical and display characteristics for the Organic Light Emitting Diode (OLED) devices. Optimized condition furnishes the OLED with the enhancement of light emission by 15%. We show that UV laser technique, which is installed with NOA 60 MLA layer, is eligible for improving the performance of the next generation display devices.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

DOE PAGES

Li, S.; Alverson, S.; Bohler, D.; ...

2017-08-17

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency.more » Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.« less

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, S.; Alverson, S.; Bohler, D.

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency.more » Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.« less

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

NASA Astrophysics Data System (ADS)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.; Gilevich, S.; Huang, Z.; Miahnahri, A.; Ratner, D.; Robinson, J.; Zhou, F.

2017-08-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μ m . Our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Terahertz generation from laser-driven ultrafast current propagation along a wire target

NASA Astrophysics Data System (ADS)

Zhuo, H. B.; Zhang, S. J.; Li, X. H.; Zhou, H. Y.; Li, X. Z.; Zou, D. B.; Yu, M. Y.; Wu, H. C.; Sheng, Z. M.; Zhou, C. T.

2017-01-01

Generation of intense coherent THz radiation by obliquely incidenting an intense laser pulse on a wire target is studied using particle-in-cell simulation. The laser-accelerated fast electrons are confined and guided along the surface of the wire, which then acts like a current-carrying line antenna and under appropriate conditions can emit electromagnetic radiation in the THz regime. For a driving laser intensity ˜3 ×1018W /cm2 and pulse duration ˜10 fs, a transient current above 10 KA is produced on the wire surface. The emission-cone angle of the resulting ˜0.15 mJ (˜58 GV/m peak electric field) THz radiation is ˜30∘ . The conversion efficiency of laser-to-THz energy is ˜0.75 % . A simple analytical model that well reproduces the simulated result is presented.

Holmium Doped Solid State Laser Resonantly Pumped and Q-Switched by Novel GaSb-Based Photonic Devices

DTIC Science & Technology

2011-08-31

increased overlap with p-cladding, presumably due to dominant role of inter valence band absorption [7]. Details of the conduction band structure of the...absorption to total loss. In the specific structures used here the n-cladding composition resulted into material with three valleys in conduction band to...materials. The beam properties of the high power 2 μm emitting GaSb -based diode lasers was improved by utilization of the waveguide structure with

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sigler, C.; Kirch, J. D.; Mawst, L. J.

2014-03-31

Resonant coupling of the transverse-magnetic polarized (guided) optical mode of a quantum-cascade laser (QCL) to the antisymmetric surface-plasmon modes of 2nd-order distributed-feedback (DFB) metal/semiconductor gratings results in strong antisymmetric-mode absorption. In turn, lasing in the symmetric mode, that is, surface emission in a single-lobe far-field beam pattern, is strongly favored over controllable ranges in grating duty cycle and tooth height. By using core-region characteristics of a published 4.6 μm-emitting QCL, grating-coupled surface-emitting (SE) QCLs are analyzed and optimized for highly efficient single-lobe operation. For infinite-length devices, it is found that when the antisymmetric mode is resonantly absorbed, the symmetric mode hasmore » negligible absorption loss (∼0.1 cm{sup −1}) while still being efficiently outcoupled, through the substrate, by the DFB grating. For finite-length devices, 2nd-order distributed Bragg reflector (DBR) gratings are used on both sides of the DFB grating to prevent uncontrolled reflections from cleaved facets. Equations for the threshold-current density and the differential quantum efficiency of SE DFB/DBR QCLs are derived. For 7 mm-long, 8.0 μm-wide, 4.6 μm-emitting devices, with an Ag/InP grating of ∼39% duty cycle, and ∼0.22 μm tooth height, threshold currents as low as 0.45 A are projected. Based on experimentally obtained internal efficiency values from high-performance QCLs, slope efficiencies as high as 3.4 W/A are projected; thus, offering a solution for watt-range, single-lobe CW operation from SE, mid-infrared QCLs.« less

An in Situ Technique for Elemental Analysis of Lunar Surfaces

NASA Technical Reports Server (NTRS)

Kane, K. Y.; Cremers, D. A.

1992-01-01

An in situ analytical technique that can remotely determine the elemental constituents of solids has been demonstrated. Laser-Induced Breakdown Spectroscopy (LIBS) is a form of atomic emission spectroscopy in which a powerful laser pulse is focused on a solid to generate a laser spark, or microplasma. Material in the plasma is vaporized, and the resulting atoms are excited to emit light. The light is spectrally resolved to identify the emitting species. LIBS is a simple technique that can be automated for inclusion aboard a remotely operated vehicle. Since only optical access to a sample is required, areas inaccessible to a rover can be analyzed remotely. A single laser spark both vaporizes and excites the sample so that near real-time analysis (a few minutes) is possible. This technique provides simultaneous multielement detection and has good sensitivity for many elements. LIBS also eliminates the need for sample retrieval and preparation preventing possible sample contamination. These qualities make the LIBS technique uniquely suited for use in the lunar environment.

Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

PubMed

Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

2014-10-28

Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

Characteristics of hierarchical micro/nano surface structure formation generated by picosecond laser processing in water and air

NASA Astrophysics Data System (ADS)

Rajab, Fatema H.; Whitehead, David; Liu, Zhu; Li, Lin

2017-12-01

Laser surface texturing or micro/nano surface structuring in the air has been extensively studied. However, until now, there are very few studies on the characteristics of laser-textured surfaces in water, and there was no reported work on picosecond laser surface micro/nano-structuring in water. In this work, the surface properties of picosecond laser surface texturing in water and air were analysed and compared. 316L stainless steel substrates were textured using a picosecond laser. The surface morphology and the chemical composition were characterised using Philips XL30 FEG-SEM, EDX and confocal laser microscopy. The wettability of the textured surfaces was determined using a contact angle analyser FTA 188. Results showed that a variety of hierarchical micro/nano surface patterns could be controlled by a suitable adjustment of laser parameters. Not only surface morphology but also remarkable differences in wettability, optical reflectivity and surface oxygen content were observed for different types of surface textures produced by laser surface texture in water and air. The possible mechanisms of the changes in the behaviour of laser-textured surfaces are discussed.

Enhanced linearly polarized lasing emission from nanoimprinted surface-emitting distributed feedback laser based on polymeric liquid crystals

NASA Astrophysics Data System (ADS)

Jeong, Soon Moon; Ha, Na Young; Chee, Mu Guen; Araoka, Fumito; Ishikawa, Ken; Takezoe, Hideo; Nishimura, Suzushi; Suzaki, Goro

2008-12-01

The authors have demonstrated the enhancement of linearly polarized lasing emission intensity using a structure made by a simple fabrication process. The enhanced lasing is achieved using a nanoimprinted distributed feedback structure together with spin-coated polymeric liquid crystals. The backward linearly TE-polarized lasing emission is transformed to left-handed circularly polarized light (L-CPL) by employing a dye-doped polymeric nematic liquid crystal (PNLC) film as a (-1/4)λ[=(3/4)λ] plate. The L-CPL is effectively reflected by a L-polymeric cholesteric liquid crystal film as a reflector and transformed back to TE-polarized light by the PNLC film; as a result one-directional emission intensity is enhanced.

Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

Experimental investigation of transient temperature characteristic in high power fiber laser cutting of a thick steel plate

NASA Astrophysics Data System (ADS)

Phi Long, Nguyen; Matsunaga, Yukihiro; Hanari, Toshihide; Yamada, Tomonori; Muramatsu, Toshiharu

2016-10-01

Experiment of temperature measurement was performed to investigate the transient temperature characteristics of molten metal during laser cutting. The aim of this study was to establish a method for measuring the surface temperature variation near the molten pool correlated with changes in cutting parameters. The relationship between temperature inside the kerf cut and characteristic of the cut surface was investigated by using thermography and thermocouples. Results show strong correlations between the transient temperatures and the thermal image for different cutting conditions. In addition, two-color thermometer has been used to obtain radiation intensity emitted from the irradiating zone as a function of operating conditions. Experiments have shown that one can detect the cutting quality by characterization of the surface temperature during laser cutting process.

Real-time monitoring of laser welding of galvanized high strength steel in lap joint configuration

NASA Astrophysics Data System (ADS)

Kong, Fanrong; Ma, Junjie; Carlson, Blair; Kovacevic, Radovan

2012-10-01

Two different cases regarding the zinc coating at the lap joint faying surface are selected for studying the influence of zinc vapor on the keyhole dynamics of the weld pool and the final welding quality. One case has the zinc coating fully removed at the faying surface; while the other case retains the zinc coating on the faying surface. It is found that removal of the zinc coating at the faying surface produces a significantly better weld quality as exemplified by a lack of spatters whereas intense spatters are present when the zinc coating is present at the faying surface. Spectroscopy is used to detect the optical spectra emitted from a laser generated plasma plume during the laser welding of galvanized high strength DP980 steel in a lap-joint configuration. A correlation between the electron temperature and defects within the weld bead is identified by using the Boltzmann plot method. The laser weld pool keyhole dynamic behavior affected by a high-pressure zinc vapor generated at the faying surface of galvanized steel lap-joint is monitored in real-time by a high speed charge-coupled device (CCD) camera assisted with a green laser as an illumination source.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

NASA Astrophysics Data System (ADS)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

PubMed Central

Voigt, Fabian F.; Emaury, Florian; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-01-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging. PMID:28717563

Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication

NASA Astrophysics Data System (ADS)

Tansu, Nelson

The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions. The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail.

Thermal effects from modified endodontic laser tips used in the apical third of root canals with erbium-doped yttrium aluminium garnet and erbium, chromium-doped yttrium scandium gallium garnet lasers.

PubMed

George, Roy; Walsh, Laurence J

2010-04-01

To evaluate the temperature changes occurring on the apical third of root surfaces when erbium-doped yttrium aluminium garnet (Er:YAG) and erbium, chromium-doped yttrium scandium gallium garnet (Er,Cr:YSGG) laser energy was delivered with a tube etched, laterally emitting conical tip and a conventional bare design optical fiber tip. Thermal effects of root canal laser treatments on periodontal ligament cells and alveolar bone are of concern in terms of safety. A total of 64 single-rooted extracted teeth were prepared 1 mm short of the working length using rotary nickel-titanium Pro-Taper files to an apical size corresponding to a F5 Pro-Taper instrument. A thermocouple located 2 mm from the apex was used to record temperature changes arising from delivery of laser energy through laterally emitting conical tips or plain tips, using an Er:YAG or Er,Cr:YSGG laser. For the Er:YAG and Er,Cr:YSGG systems, conical fibers showed greater lateral emissions (452 + 69% and 443 + 64%) and corresponding lower forward emissions (48 + 5% and 49 + 5%) than conventional plain-fiber tips. All four combinations of laser system and fiber design elicited temperature increases less than 2.5 degrees C during lasing. The use of water irrigation attenuated completely the thermal effects of individual lasing cycles. Laterally emitting conical fiber tips can be used safely under defined conditions for intracanal irradiation without harmful thermal effects on the periodontal apparatus.

A Semiconductor Microlaser for Intracavity Flow Cytometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhil, O.; Copeland, G.C.; Dunne, J.L.

1999-01-20

Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

Bright new world

NASA Astrophysics Data System (ADS)

Kroó, Norbert; Rácz, Péter; Varró, Sándor

2016-02-01

Surface plasmons (SPOs) have been excited by intense femtosecond laser pulses on a gold film at room temperature and their near field has been analyzed by the intensity dependent response of an STM and by studying the spectra of multiplasmon emitted electrons. Around 80 GW/cm2 laser intensity, anomalies have been found in both cases, interpreted as the stepping in of electron pairing, transition to a diamagnetic state, and by anomalous Faraday rotation.

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, C.; Sigler, C.; Kirch, J. D.

2016-03-21

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical modemore » to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the device's cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.« less

Response of inorganic materials to laser - plasma EUV radiation focused with a lobster eye collector

NASA Astrophysics Data System (ADS)

Bartnik, Andrzej; Fiedorowicz, Henryk; Jarocki, Roman; Kostecki, Jerzy; Szczurek, Miroslaw; Havlikova, Radka; Pína, Ladislav; Švéda, Libor; Inneman, Adolf

2007-05-01

A single photon of EUV radiation carries enough energy to break any chemical bond or excite electrons from inner atomic shells. It means that the radiation regardless of its intensity can modify chemical structure of molecules. It is the reason that the radiation even with low intensity can cause fragmentation of long chains of organic materials and desorption of small parts from their surface. In this work interaction of EUV radiation with inorganic materials was investigated. Different inorganic samples were irradiated with a 10 Hz laser - plasma EUV source based on a gas puff target. The radiation was focused on a sample surface using a lobster eye collector. Radiation fluence at the surface reached 30 mJ/cm2 within a wavelength range 7 - 20 nm. In most cases there was no surface damage even after several minutes of irradiation. In some cases there could be noticed discolouration of an irradiated surface or evidences of thermal effects. In most cases however luminescent and scattered radiation was observed. The luminescent radiation was emitted in different wavelength ranges. It was recorded in a visible range of radiation and also in a wide wavelength range including UV, VUV and EUV. The radiation was especially intense in a case of non-metallic chemical compounds.

VCSEL end-pumped passively Q-switched Nd:YAG laser with adjustable pulse energy.

PubMed

Goldberg, Lew; McIntosh, Chris; Cole, Brian

2011-02-28

A compact, passively Q-switched Nd:YAG laser utilizing a Cr4+:YAG saturable absorber, is end-pumped by the focused emission from an 804 nm vertical-cavity surface-emitting laser (VCSEL) array. By changing the VCSEL operating current, we demonstrated 2x adjustability in the laser output pulse energy, from 9 mJ to 18 mJ. This energy variation was attributed to changes in the angular distribution of VCSEL emission with drive current, resulting in a change in the pump intensity distribution generated by a pump-light-focusing lens.

Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm

NASA Astrophysics Data System (ADS)

Feise, D.; Bugge, F.; Matalla, M.; Thies, A.; Ressel, P.; Blume, G.; Hofmann, J.; Paschke, K.

2018-02-01

Distributed Bragg reflector tapered diode lasers (DBR-TPL) emitting at 1154 nm are ideal light sources to be implemented into medical devices and hand-held tools for treatment in dermatology and ophthalmology at 577 nm due to their high spectral radiance enabling second harmonic generation from near infrared to yellow. In this work, we present DBR-TPLs which are able to emit more than 10 W in continuous-wave operation with a narrow spectral emission at 1154 nm and a very good beam quality providing excellent spectral radiance. The investigated DBRTPLs are based on three different epitaxial structures with varying vertical far field angles of 35°, 26°, and 17°. To optimize the coupling efficiency into non-linear crystals we studied DBR-TPL with a vertical far field angle of approx. 17° based on an asymmetrical super large optical cavity epitaxial structure. At a pump current of 18 A these devices are able to emit more than 9 W at 25°C and nearly 11 W at 10°C. The spectral emission is very narrow (ΔλFWHM = 18 pm) and single mode over the entire current range. While the beam quality factor M2 according to the 1/e2-level remains 1.1, the M2 according to second order moments deteriorates when the laser is pumped with higher currents. Therefore, the power content in the central lobe increases somewhat less rapidly than the total power.

Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

NASA Astrophysics Data System (ADS)

Mokhtari, Merwan; Pagnod-Rossiaux, Philippe; Laruelle, Francois; Landesman, Jean-Pierre; Moreac, Alain; Levallois, Christophe; Cassidy, Daniel T.

2018-03-01

In-plane micro-photoluminescence (μ-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures: a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. μ-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved μ-PL. These measurements allow us to evaluate the main components of strain.

The influence of the focus position on laser machining and laser micro-structuring monocrystalline diamond surface

NASA Astrophysics Data System (ADS)

Wu, Mingtao; Guo, Bing; Zhao, Qingliang; Fan, Rongwei; Dong, Zhiwei; Yu, Xin

2018-06-01

Micro-structured surface on diamond is widely used in microelectronics, optical elements, MEMS and NEMS components, ultra-precision machining tools, etc. The efficient micro-structuring of diamond material is still a challenging task. In this article, the influence of the focus position on laser machining and laser micro-structuring monocrystalline diamond surface were researched. At the beginning, the ablation threshold and its incubation effect of monocrystalline diamond were determined and discussed. As the accumulated laser pulses ranged from 40 to 5000, the laser ablation threshold decreased from 1.48 J/cm2 to 0.97 J/cm2. Subsequently, the variation of the ablation width and ablation depth in laser machining were studied. With enough pulse energy, the ablation width mainly depended on the laser propagation attributes while the ablation depth was a complex function of the focus position. Raman analysis was used to detect the variation of the laser machined diamond surface after the laser machining experiments. Graphite formation was discovered on the machined diamond surface and graphitization was enhanced after the defocusing quantity exceeded 45 μm. At last, several micro-structured surfaces were successfully fabricated on diamond surface with the defined micro-structure patterns and structuring ratios just by adjusting the defocusing quantity. The experimental structuring ratio was consistent with the theoretical analysis.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

Mimicking lizard-like surface structures upon ultrashort laser pulse irradiation of inorganic materials

NASA Astrophysics Data System (ADS)

Hermens, U.; Kirner, S. V.; Emonts, C.; Comanns, P.; Skoulas, E.; Mimidis, A.; Mescheder, H.; Winands, K.; Krüger, J.; Stratakis, E.; Bonse, J.

2017-10-01

Inorganic materials, such as steel, were functionalized by ultrashort laser pulse irradiation (fs- to ps-range) to modify the surface's wetting behavior. The laser processing was performed by scanning the laser beam across the surface of initially polished flat sample material. A systematic experimental study of the laser processing parameters (peak fluence, scan velocity, line overlap) allowed the identification of different regimes associated with characteristic surface morphologies (laser-induced periodic surface structures, grooves, spikes, etc.). Analyses of the surface using optical as well as scanning electron microscopy revealed morphologies providing the optimum similarity to the natural skin of lizards. For mimicking skin structures of moisture-harvesting lizards towards an optimization of the surface wetting behavior, additionally a two-step laser processing strategy was established for realizing hierarchical microstructures. In this approach, micrometer-scaled capillaries (step 1) were superimposed by a laser-generated regular array of small dimples (step 2). Optical focus variation imaging measurements finally disclosed the three dimensional topography of the laser processed surfaces derived from lizard skin structures. The functionality of these surfaces was analyzed in view of wetting properties.

INTRODUCTION: Surface Dynamics, Phonons, Adsorbate Vibrations and Diffusion

NASA Astrophysics Data System (ADS)

Bruch, L. W.

2004-07-01

Dilute nitrides have emerged from conventional III-V semiconductors such as GaAs or InP by the insertion of nitrogen into the group V sub-lattice, which has a profound influence on the electronic properties of these materials and allows widely extended band structure engineering. This is expected to lead to novel devices, e.g. for optical data transmission, solar cells, biophotonics or gas sensing, some of which are already making their way into the market. Unlike in all other cases, where a reduction in bandgap energy is achieved by inserting an element that increases the lattice constant, N accomplishes this and at the same time reduces the lattice constant. Thus smaller bandgaps can be achieved and the unusual role of N in the lattice also allows a tailoring of band alignments. Both of these effects have opened up a new dimension of bandgap engineering and the rapid progress in the field led to the demonstration of high quality 1300 nm lasers on GaAs and eventually to the realization of the first VCSELs that can be mass produced at low cost and emit at 1300 nm. This in turn will allow extending inexpensive data transmission through optical fibers from the present range of about 300 m to a distance of 10 to 20 km and at the same time increasing the data rate by about a factor of four. Thus it will enable metro-area data links, which are presently considered to be the bottleneck for large-scale optical communications. Furthermore, the fact that GaNP and related alloys can be grown lattice-matched on Si substrates has offered intriguing new possibilities of OEIC and integration of efficient III-V optoelectronic devices with the mainstream microelectronics based on Si. Despite their promising applications and the first encouraging experimental results, very little is known about the physical properties of such alloys. For instance the difficulty of incorporating nitrogen into GaInAs while maintaining good optical quality has provoked much work to establish an understanding of the underlying factors determining the optical quality of GaInNAs, such as composition, growth and annealing conditions. We are still far from establishing an understanding of the band structure and its dependence on composition. Fundamental electronic interactions such as electron-electron and electron-phonon scattering, dependence of effective mass on composition, strain and orientation, quantum confinement effects, effects of localized nitrogen states on high field transport and on galvanometric properties, and mechanisms for light emission in these materials, are yet to be fully understood. Nature and formation mechanisms of grown-in and processing-induced defects that are important for material quality and device performance are still unknown. Such knowledge is required in order to design strategies to efficiently control and eliminate harmful defects. For many potential applications (such as solar cells, HBTs) it is essential to get more information on the transport properties of dilute nitride materials. The mobility of minority carriers is known to be low in GaInNAs and related material. The experimental values are far from reaching the theoretical ones, due to defects and impurities introduced in the material during the growth. The role of the material inhomogeneities on the lateral carrier transport also needs further investigation. From the device's point of view most attention to date has been focused on the GaInNAs/GaAs system, mainly because of its potential for optoelectronic devices covering the 1.3-1.55 µm data and telecommunications wavelength bands. As is now widely appreciated, these GaAs-compatible structures allow monolithic integration of AlGaAs-based distributed Bragg reflector mirrors (DBRs) for vertical cavity surface-emitting lasers with low temperature sensitivity and compatibility with AlOx-based confinement techniques. In terms of conventional edge-emitting lasers (EELs), the next step is to extend the wavelength range for cw room-temperature operation, as well as improving the spectral purity, modulation speed and peak power output. Many applications in medicine, environmental sensing and communications can be addressed with the achievement of significant improvements in these parameters. Semiconductor optical amplifiers (SOAs) are also important devices of interest, since it is widely predicted that the market for SOAs in photonic access networks will increase dramatically in the next few years. In addition to EELs and SOAs, vertical cavity surface-emitting lasers (VCSELs), vertical external cavity surface-emitting lasers (VECSELs), vertical cavity semiconductor optical amplifiers (VCSOAs), and semiconductor saturable absorber mirrors (SESAMs) are of increasing importance. The VECSELs can potentially incorporate saturable absorbers for very high repetition rate (~100 GHz) pulsed and potentially MEMS-tuneable sources. VECSEL devices in the 2-3 µm range for applications in e.g. free-space optical (FSO) communications, are possible using InAsN/InGaAs/InP with AlGaAs metamorphic mirror growth. Semiconductor saturable-absorber mirror structures (SESAMs) have demonstrated widespread applicability for self-starting passive mode locking of (diode-pumped) solid-state lasers, to produce high-performance picosecond and femtosecond laser sources for scientific, instrumentation and industrial use. Very recently, these devices have also shown applicability for ultra short pulse generation at >GHz repetition rates, both in DPSS lasers and surface-emitting semiconductor lasers. These devices are undoped monolithic DBR structures incorporating one or more quantum wells for saturable absorption. Low-loss and high-damage threshold requirements demand pseudomorphic growth, and have, until very recently, essentially limited these devices to the 800-1100 nm range, but extension beyond this range is urgently required by a host of mode locking applications. In addition to these devices modulators and photodiodes, including quantum well infrared photodetectors (QWIPs) and resonant cavity-enhanced photodiodes (RCEPDs) based on dilute nitrides need to be investigated extensively. To date, most theoretical attention has been focused on understanding the band structure of the GaInAsN/GaAs system and on evaluating gain spectra and threshold conditions for 1.3 µm lasers. However, as our understanding of band structure and the effects of strain, defects, etc in dilute nitrides improves we can calculate the electrical and optical properties, including radiative and non-radiative recombination for the materials and structures of interest. The spontaneous and stimulated emission rates have already been calculated for GaInNAs at 1.3 µm by many authors, but extension to other dilute nitrides and other wavelength ranges still represents a major challenge. Many-body effects, including exchange-correlation effects, are essential for accurate models of gain spectra in lasers and optical amplifiers. The differential gain is a key parameter for laser modulation and remains an important subject of study as new materials and structures are explored. Similarly the differential refractive index and linewidth enhancement factor have strong influences on laser spectrum (chirp, linewidth), dynamics and noise, and these must also be studied theoretically. As regards to non-radiative recombination, in addition to recombination through defects, the Auger effect is of especial significance for wavelengths beyond 1 µm and is a worthy subject for theoretical study. The converse effect, impact ionization, is of key importance for avalanche photodiodes (APDs) and has yet to be evaluated for the dilute nitride materials. Inter-valence band absorption (IVBA) is of significance, as a possible cause of temperature sensitivity in lasers and this must be investigated theoretically in the dilute nitrides. Third-order non-linear optical coefficients should be calculated in order to assess the scope for all-optical signal processing components within the dilute nitrides. Electro-absorption and electro-refractive effects—Franz-Keldysh (FK) and quantum-confined Stark effect (QCSE) need to be studied theoretically in view of their importance for optical modulators. The aim of this special issue is to review the recent progress in theory, growth, characterization and device applications of dilute nitrides, and to collate what is known and what is not known in the field and address important fundamental physical properties and key material and device issues. The issue brings together a wide selection of papers from over 27 prominent research groups that have made key contributions to the field in the areas of research including growth, characterization and physical properties, devices and device integration, and theory and modelling. The editor is very grateful to all the invited authors for their contribution to this issue of Journal of Physics: Condensed Matter. I am grateful to Professors M J Adams, X Marie and Dr H Riechert for their help and contributions to the preparation of the editorial.

Near-ultraviolet laser diodes for brilliant ultraviolet fluorophore excitation.

PubMed

Telford, William G

2015-12-01

Although multiple lasers are now standard equipment on most modern flow cytometers, ultraviolet (UV) lasers (325-365 nm) remain an uncommon excitation source for cytometry. Nd:YVO4 frequency-tripled diode pumped solid-state lasers emitting at 355 nm are now the primary means of providing UV excitation on multilaser flow cytometers. Although a number of UV excited fluorochromes are available for flow cytometry, the cost of solid-state UV lasers remains prohibitively high, limiting their use to all but the most sophisticated multilaser instruments. The recent introduction of the brilliant ultraviolet (BUV) series of fluorochromes for cell surface marker detection and their importance in increasing the number of simultaneous parameters for high-dimensional analysis has increased the urgency of including UV sources in cytometer designs; however, these lasers remain expensive. Near-UV laser diodes (NUVLDs), a direct diode laser source emitting in the 370-380 nm range, have been previously validated for flow cytometric analysis of most UV-excited probes, including quantum nanocrystals, the Hoechst dyes, and 4',6-diamidino-2-phenylindole. However, they remain a little-used laser source for cytometry, despite their significantly lower cost. In this study, the ability of NUVLDs to excite the BUV dyes was assessed, along with their compatibility with simultaneous brilliant violet (BV) labeling. A NUVLD emitting at 375 nm was found to excite most of the available BUV dyes at least as well as a UV 355 nm source. This slightly longer wavelength did produce some unwanted excitation of BV dyes, but at sufficiently low levels to require minimal additional compensation. NUVLDs are compact, relatively inexpensive lasers that have higher power levels than the newest generation of small 355 nm lasers. They can, therefore, make a useful, cost-effective substitute for traditional UV lasers in multicolor analysis involving the BUV and BV dyes. Published 2015 Wiley Periodicals Inc. on behalf of ISAC.

Anticorrelated Emission of High Harmonics and Fast Electron Beams From Plasma Mirrors.

PubMed

Bocoum, Maïmouna; Thévenet, Maxence; Böhle, Frederik; Beaurepaire, Benoît; Vernier, Aline; Jullien, Aurélie; Faure, Jérôme; Lopez-Martens, Rodrigo

2016-05-06

We report for the first time on the anticorrelated emission of high-order harmonics and energetic electron beams from a solid-density plasma with a sharp vacuum interface-plasma mirror-driven by an intense ultrashort laser pulse. We highlight the key role played by the nanoscale structure of the plasma surface during the interaction by measuring the spatial and spectral properties of harmonics and electron beams emitted by a plasma mirror. We show that the nanoscale behavior of the plasma mirror can be controlled by tuning the scale length of the electron density gradient, which is measured in situ using spatial-domain interferometry.

Electrical birefringence tuning of VCSELs

NASA Astrophysics Data System (ADS)

Pusch, Tobias; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.; Michalzik, Rainer

2018-02-01

The birefringence splitting B, which is the frequency difference between the two fundamental linear polarization modes in vertical-cavity surface-emitting lasers (VCSELs), is the key parameter determining the polarization dynamics of spin-VCSELs that can be much faster than the intensity dynamics. For easy handling and control, electrical tuning of B is favored. This was realized in an integrated chip by thermally induced strain via asymmetric heating with a birefringence tuning range of 45 GHz. In this paper we present our work on VCSEL structures mounted on piezoelectric transducers for strain generation. Furthermore we show a combination of both techniques, namely VCSELs with piezo-thermal birefringence tunability.

Fabrication of multi-scale periodic surface structures on Ti-6Al-4V by direct laser writing and direct laser interference patterning for modified wettability applications

NASA Astrophysics Data System (ADS)

Huerta-Murillo, D.; Aguilar-Morales, A. I.; Alamri, S.; Cardoso, J. T.; Jagdheesh, R.; Lasagni, A. F.; Ocaña, J. L.

2017-11-01

In this work, hierarchical surface patterns fabricated on Ti-6Al-4V alloy combining two laser micro-machining techniques are presented. The used technologies are based on nanosecond Direct Laser Writing and picosecond Direct Laser Interference Patterning. Squared shape micro-cells with different hatch distances were produced by Direct Laser Writing with depths values in the micro-scale, forming a well-defined closed packet. Subsequently, cross-like periodic patterns were fabricated by means of Direct Laser Interference Patterning using a two-beam configuration, generating a dual-scale periodic surface structure in both micro- and nano-scale due to the formation of Laser-Induced Periodic Surface Structure after the picosecond process. As a result a triple hierarchical periodic surface structure was generated. The surface morphology of the irradiated area was characterized with scanning electron microscopy and confocal microscopy. Additionally, static contact angle measurements were made to analyze the wettability behavior of the structures, showing a hydrophobic behavior for the hierarchical structures.

Efficient and mechanically robust stretchable organic light-emitting devices by a laser-programmable buckling process

PubMed Central

Yin, Da; Feng, Jing; Ma, Rui; Liu, Yue-Feng; Zhang, Yong-Lai; Zhang, Xu-Lin; Bi, Yan-Gang; Chen, Qi-Dai; Sun, Hong-Bo

2016-01-01

Stretchable organic light-emitting devices are becoming increasingly important in the fast-growing fields of wearable displays, biomedical devices and health-monitoring technology. Although highly stretchable devices have been demonstrated, their luminous efficiency and mechanical stability remain impractical for the purposes of real-life applications. This is due to significant challenges arising from the high strain-induced limitations on the structure design of the device, the materials used and the difficulty of controlling the stretch-release process. Here we have developed a laser-programmable buckling process to overcome these obstacles and realize a highly stretchable organic light-emitting diode with unprecedented efficiency and mechanical robustness. The strained device luminous efficiency −70 cd A−1 under 70% strain - is the largest to date and the device can accommodate 100% strain while exhibiting only small fluctuations in performance over 15,000 stretch-release cycles. This work paves the way towards fully stretchable organic light-emitting diodes that can be used in wearable electronic devices. PMID:27187936

Nanofabrication with Pulsed Lasers

PubMed Central

2010-01-01

An overview of pulsed laser-assisted methods for nanofabrication, which are currently developed in our Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by laser–matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of direct laser ablation or laser plasma-assisted treatment of semiconductors to form light-absorbing and light-emitting nano-architectures, as well as periodic nanoarrays, or laser-assisted production of nanoclusters and their controlled growth in gaseous or liquid medium to form nanostructured films or colloidal nanoparticles. Nanomaterials synthesized by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of importance for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics. PMID:20672069

Terahertz generation from laser-driven ultrafast current propagation along a wire target.

PubMed

Zhuo, H B; Zhang, S J; Li, X H; Zhou, H Y; Li, X Z; Zou, D B; Yu, M Y; Wu, H C; Sheng, Z M; Zhou, C T

2017-01-01

Generation of intense coherent THz radiation by obliquely incidenting an intense laser pulse on a wire target is studied using particle-in-cell simulation. The laser-accelerated fast electrons are confined and guided along the surface of the wire, which then acts like a current-carrying line antenna and under appropriate conditions can emit electromagnetic radiation in the THz regime. For a driving laser intensity ∼3×10^{18}W/cm^{2} and pulse duration ∼10 fs, a transient current above 10 KA is produced on the wire surface. The emission-cone angle of the resulting ∼0.15 mJ (∼58 GV/m peak electric field) THz radiation is ∼30^{∘}. The conversion efficiency of laser-to-THz energy is ∼0.75%. A simple analytical model that well reproduces the simulated result is presented.

A nanoscale vacuum-tube diode triggered by few-cycle laser pulses

NASA Astrophysics Data System (ADS)

Higuchi, Takuya; Maisenbacher, Lothar; Liehl, Andreas; Dombi, Péter; Hommelhoff, Peter

2015-02-01

We propose and demonstrate a nanoscale vacuum-tube diode triggered by few-cycle near-infrared laser pulses. It represents an ultrafast electronic device based on light fields, exploiting near-field optical enhancement at surfaces of two metal nanotips. The sharper of the two tips displays a stronger field-enhancement, resulting in larger photoemission yields at its surface. One laser pulse with a peak intensity of 4.7 × 1011 W/cm2 triggers photoemission of ˜16 electrons from the sharper cathode tip, while emission from the blunter anode tip is suppressed by 19 dB to ˜0.2 electrons per pulse. Thus, the laser-triggered current between two tips exhibit a rectifying behavior, in analogy to classical vacuum-tube diodes. According to the kinetic energy of the emitted electrons and the distance between the tips, the total operation time of this laser-triggered nanoscale diode is estimated to be below 1 ps.

Multicolor photonic crystal laser array

DOEpatents

Wright, Jeremy B; Brener, Igal; Subramania, Ganapathi S; Wang, George T; Li, Qiming

2015-04-28

A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Carbon nanotube mode-locked vertical external-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Seger, K.; Meiser, N.; Choi, S. Y.; Jung, B. H.; Yeom, D.-I.; Rotermund, F.; Okhotnikov, O.; Laurell, F.; Pasiskevicius, V.

2014-03-01

Mode-locking an optically pumped semiconductor disk laser has been demonstrated using low-loss saturable absorption containing a mixture of single-walled carbon nanotubes in PMM polymer. The modulator was fabricated by a simple spin-coating technique on fused silica substrate and was operating in transmission. Stable passive fundamental modelocking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm.

Surface-enhanced hyper-Raman spectroscopy with a picosecond laser: gold and copper colloids

NASA Astrophysics Data System (ADS)

Lipscomb, Leigh Ann; Nie, Shuming; Feng, Sibo; Yu, Nai-Teng

1990-07-01

We have obtained surface-enhanced hyper-Raman scattering (SEHRS) spectra of crystal violet, rhodamine 6G and Ru(trpy) (BPE) 32+ adsorbed on gold and copper colloidal surfaces (where trpy=2,2',2″-terpyridine, BPE=trans-bis(4-pyridyl)ethylene). Our results demonstrate that the SEHRS effect is not intrinsically restricted to a Ag substrate and that surface enhancements at the emitted hyper-Raman photon frequencies are not required for observing SEHRS signals.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1.31mum: 1.46mum. These techniques offer the promise of inexpensive, high speed fiber networking.

Experimental phase-space-based optical amplification of scar modes.

PubMed

Michel, C; Tascu, S; Doya, V; Aschiéri, P; Blanc, W; Legrand, O; Mortessagne, F

2012-04-01

Wave billiards which are chaotic in the geometrical limit are known to support nongeneric spatially localized modes called scar modes. The interaction of the scar modes with gain has been recently investigated in optics in microcavity lasers and vertical-cavity surface-emitting lasers. Exploiting the localization properties of scar modes in their wave-analogous phase-space representation, we report experimental results of scar mode selection by gain in a doped D-shaped optical fiber.

Mobile laser scanning applied to the earth sciences

USGS Publications Warehouse

Brooks, Benjamin A.; Glennie, Craig; Hudnut, Kenneth W.; Ericksen, Todd; Hauser, Darren

2013-01-01

Lidar (light detection and ranging), a method by which the precise time of flight of emitted pulses of laser energy is measured and converted to distance for reflective targets, has helped scientists make topographic maps of Earth's surface at scales as fine as centimeters. These maps have allowed the discovery and analysis of myriad otherwise unstudied features, such as fault scarps, river channels, and even ancient ruins [Glennie et al., 2013b].

In vitro performance of DIAGNOdent laser fluorescence device for dental calculus detection on human tooth root surfaces.

PubMed

Rams, Thomas E; Alwaqyan, Abdulaziz Y

2017-10-01

This study assessed the reproducibility of a red diode laser device, and its capability to detect dental calculus in vitro on human tooth root surfaces. On each of 50 extracted teeth, a calculus-positive and calculus-free root surface was evaluated by two independent examiners with a low-power indium gallium arsenide phosphide diode laser (DIAGNOdent) fitted with a periodontal probe-like sapphire tip and emitting visible red light at 655 nm wavelength. Laser autofluorescence intensity readings of examined root surfaces were scored on a 0-99 scale, with duplicate assessments performed using the laser probe tip directed both perpendicular and parallel to evaluated tooth root surfaces. Pearson correlation coefficients of untransformed measurements, and kappa analysis of data dichotomized with a >40 autofluorescence intensity threshold, were calculated to assess intra- and inter-examiner reproducibility of the laser device. Mean autofluorescence intensity scores of calculus-positive and calculus-free root surfaces were evaluated with the Student's t -test. Excellent intra- and inter-examiner reproducibility was found for DIAGNOdent laser autofluorescence intensity measurements, with Pearson correlation coefficients above 94%, and kappa values ranging between 0.96 and 1.0, for duplicate readings taken with both laser probe tip orientations. Significantly higher autofluorescence intensity values were measured when the laser probe tip was directed perpendicular, rather than parallel, to tooth root surfaces. However, calculus-positive roots, particularly with calculus in markedly-raised ledges, yielded significantly greater mean DIAGNOdent laser autofluorescence intensity scores than calculus-free surfaces, regardless of probe tip orientation. DIAGNOdent autofluorescence intensity values >40 exhibited a stronger association with calculus (36.6 odds ratio) then measurements of ≥5 (20.1 odds ratio) when the laser probe tip was advanced parallel to root surfaces. Excellent intra- and inter-examiner reproducibility of autofluorescence intensity measurements was obtained with the DIAGNOdent laser fluorescence device on human tooth roots. Calculus-positive root surfaces exhibited significantly greater DIAGNOdent laser autofluorescence than calculus-free tooth roots, even with the laser probe tip directed parallel to root surfaces. These findings provide further in vitro validation of the potential utility of a DIAGNOdent laser fluorescence device for identifying dental calculus on human tooth root surfaces.

Femtosecond laser structuring of titanium implants

NASA Astrophysics Data System (ADS)

Vorobyev, A. Y.; Guo, Chunlei

2007-06-01

In this study we perform the first femtosecond laser surface treatment of titanium in order to determine the potential of this technology for surface structuring of titanium implants. We find that the femtosecond laser produces a large variety of nanostructures (nanopores, nanoprotrusions) with a size down to 20 nm, multiple parallel grooved surface patterns with a period on the sub-micron level, microroughness in the range of 1-15 μm with various configurations, smooth surface with smooth micro-inhomogeneities, and smooth surface with sphere-like nanostructures down to 10 nm. Also, we have determined the optimal conditions for producing these surface structural modifications. Femtosecond laser treatment can produce a richer variety of surface structures on titanium for implants and other biomedical applications than long-pulse laser treatments.

Mimicking bug-like surface structures and their fluid transport produced by ultrashort laser pulse irradiation of steel

NASA Astrophysics Data System (ADS)

Kirner, S. V.; Hermens, U.; Mimidis, A.; Skoulas, E.; Florian, C.; Hischen, F.; Plamadeala, C.; Baumgartner, W.; Winands, K.; Mescheder, H.; Krüger, J.; Solis, J.; Siegel, J.; Stratakis, E.; Bonse, J.

2017-12-01

Ultrashort laser pulses with durations in the fs-to-ps range were used for large area surface processing of steel aimed at mimicking the morphology and extraordinary wetting behaviour of bark bugs (Aradidae) found in nature. The processing was performed by scanning the laser beam over the surface of polished flat sample surfaces. A systematic variation of the laser processing parameters (peak fluence and effective number of pulses per spot diameter) allowed the identification of different regimes associated with characteristic surface morphologies (laser-induced periodic surface structures, i.e., LIPSS, grooves, spikes, etc.). Moreover, different laser processing strategies, varying laser wavelength, pulse duration, angle of incidence, irradiation atmosphere, and repetition rates, allowed to achieve a range of morphologies that resemble specific structures found on bark bugs. For identifying the ideal combination of parameters for mimicking bug-like structures, the surfaces were inspected by scanning electron microscopy. In particular, tilted micrometre-sized spikes are the best match for the structure found on bark bugs. Complementary to the morphology study, the wetting behaviour of the surface structures for water and oil was examined in terms of philic/phobic nature and fluid transport. These results point out a route towards reproducing complex surface structures inspired by nature and their functional response in technologically relevant materials.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, W.W.; Choquette, K.D.; Gourley, P.L.

1998-01-27

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof are disclosed. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n {>=} 2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n {>=} 2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum. 12 figs.

Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Jun; Xia, Qing; Wang, Xiaofa

2017-10-01

Based on the extended spin-flip model, the all-optical flip-flop stability maps of the 1550nm vertical-cavity surface-emitting laser have been studied. Theoretical results show that excellent agreement is found between theoretical and the reported experimental results in polarization switching point current which is equal to 1.95 times threshold. Furthermore, the polarization bistable region is wide which is from 1.05 to 1.95 times threshold. A new method is presented that uses power difference between two linear polarization modes as the judging criterion of trigger degree and stability maps of all-optical flip-flop operation under different injection parameters are obtained. By alternately injecting set and reset pulse with appropriate parameters, the mutual conversion switching between two polarization modes is realized, the feasibility of all-optical flip-flop operation is checked theoretically. The results show certain guiding significance on the experimental study on all optical buffer technology.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, Weng W.; Choquette, Kent D.; Gourley, Paul L.

1998-01-01

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

2001-05-01

Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

NASA Astrophysics Data System (ADS)

Bugge, F.; Bege, R.; Blume, G.; Feise, D.; Sumpf, B.; Werner, N.; Zeimer, U.; Paschke, K.; Weyers, M.

2018-06-01

Highly strained InxGa1-xAs QWs are commonly used for laser diodes in the wavelength range beyond 1100 nm, but they suffer from strain induced formation of defects. The effect of different laser structures and different laser layouts on the aging behavior was investigated. If grown and processed under optimized conditions, laser diodes emitting at 1120 nm, 1156 nm and 1180 nm have lifetimes of several 1000 h up to more than 20,000 h in dependence on structure or indium content. Laser diodes with three different emission wavelength were mounted in a microoptical bench with a second harmonic generation crystal. From these benches laser emission in the green-yellow spectral range with more than 800 mW output power was obtained.

The Ice, Cloud, and land Elevation Satellite (ICESat) Summary Mission Timeline and Performance Relative to Pre-Launch Mission Success Criteria

NASA Technical Reports Server (NTRS)

Webb, Charles E.; Zwally H. Jay; Abdalati, Waleed

2012-01-01

The Ice, Cloud and land Elevation Satellite (ICESat) mission was conceived, primarily, to quantify the spatial and temporal variations in the topography of the Greenland and Antarctic ice sheets. It carried on board the Geoscience Laser Altimeter System (GLAS), which measured the round-trip travel time of a laser pulse emitted from the satellite to the surface of the Earth and back. Each range derived from these measurements was combined with precise, concurrent orbit and pointing information to determine the location of the laser spot centroid on the Earth. By developing a time series of precise topographic maps for each ice sheet, changes in their surface elevations can be used to infer their mass balances.

Effect of radiant heat on conventional glass ionomer cements during setting by using a blue light diode laser system (445 nm).

PubMed

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2017-04-01

The aim of this in vitro study was to evaluate the effect of radiant heat on surface hardness of three conventional glass ionomer cements (GICs) by using a blue diode laser system (445 nm) and a light-emitting diode (LED) unit. Additionally, the safety of the laser treatment was evaluated. Thirty disk-shaped specimens were prepared of each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: group 1 was the control group of the study; in group 2, the specimens were irradiated for 60 s at the top surface using a LED light-curing unit; and in group 3, the specimens were irradiated for 60 s at the top surface using a blue light diode laser system (445 nm). Statistical analysis was performed using one-way ANOVA and Tukey post-hoc tests at a level of significance of a = 0.05. Radiant heat treatments, with both laser and LED devices, increased surface hardness (p < 0.05) but in different extent. Blue diode laser treatment was seemed to be more effective compared to LED treatment. There were no alterations in surface morphology or chemical composition after laser treatment. The tested radiant heat treatment with a blue diode laser may be advantageous for the longevity of GIC restorations. The safety of the use of blue diode laser for this application was confirmed.

Laser Doppler velocimetry using a modified computer mouse

NASA Astrophysics Data System (ADS)

Zaron, Edward D.

2016-10-01

A computer mouse has been modified for use as a low-cost laser Doppler interferometer and used to measure the two-component fluid velocity of a flowing soap film. The mouse sensor contains two vertical cavity surface emitting lasers, photodiodes, and signal processing hardware integrated into a single package, approximately 1 cm2 in size, and interfaces to a host computer via a standard USB port. Using the principle of self-mixing interferometry, whereby laser light re-enters the laser cavity after being scattered from a moving target, the Doppler shift and velocity of scatterers dispersed in the flow are measured. Observations of the boundary layer in a turbulent soap film channel flow demonstrate the capabilities of the sensor.

Aluminum Surface Texturing by Means of Laser Interference Metallurgy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jian; Sabau, Adrian S; Jones, Jonaaron F.

2015-01-01

The increasing use of lightweight materials, such as aluminum alloys, in auto body structures requires more effective surface cleaning and texturing techniques to improve the quality of the structural components. The present work introduces a novel surface treatment method using laser interferometry produced by two beams of a pulsed Nd:YAG laser operating at 10Hz of frequency to clean aluminum surfaces, and meanwhile creating periodic and rough surface structures. The influences of beam size, laser fluence, wavelength, and pulse number per spot are investigated. High resolution optical profiler images reveal the change of the peak-to-valley height on the laser-treated surface.

Photon generator

DOEpatents

Srinivasan-Rao, Triveni

2002-01-01

A photon generator includes an electron gun for emitting an electron beam, a laser for emitting a laser beam, and an interaction ring wherein the laser beam repetitively collides with the electron beam for emitting a high energy photon beam therefrom in the exemplary form of x-rays. The interaction ring is a closed loop, sized and configured for circulating the electron beam with a period substantially equal to the period of the laser beam pulses for effecting repetitive collisions.

Detection and mapping of trace explosives on surfaces under ambient conditions using multiphoton electron extraction spectroscopy (MEES).

PubMed

Tang, Shisong; Vinerot, Nataly; Fisher, Danny; Bulatov, Valery; Yavetz-Chen, Yehuda; Schechter, Israel

2016-08-01

Multiphoton electron extraction spectroscopy (MEES) is an analytical method in which UV laser pulses are utilized for extracting electrons from solid surfaces in multiphoton processes under ambient conditions. Counting the emitted electrons as a function of laser wavelength results in detailed spectral features, which can be used for material identification. The method has been applied to detection of trace explosives on a variety of surfaces. Detection was possible on dusty swabs spiked with explosives and also in the standard dry-transfer contamination procedure. Plastic explosives could also be detected. The analytical limits of detection (LODs) are in the sub pmole range, which indicates that MEES is one of the most sensitive detection methods for solid surface under ambient conditions. Scanning the surface with the laser allows for its imaging, such that explosives (as well as other materials) can be located. The imaging mode is also useful in forensic applications, such as detection of explosives in human fingerprints. Copyright © 2016 Elsevier B.V. All rights reserved.

RGB and white-emitting organic lasers on flexible glass.

PubMed

Foucher, C; Guilhabert, B; Kanibolotsky, A L; Skabara, P J; Laurand, N; Dawson, M D

2016-02-08

Two formats of multiwavelength red, green and blue (RGB) laser on mechanically-flexible glass are demonstrated. In both cases, three all-organic, vertically-emitting distributed feedback (DFB) lasers are assembled onto a common ultra-thin glass membrane substrate and fully encapsulated by a thin polymer overlayer and an additional 50 µm-thick glass membrane in order to improve the performance. The first device format has the three DFB lasers sitting next to each other on the glass substrate. The DFB lasers are simultaneously excited by a single overlapping optical pump, emitting spatially separated red, green and blue laser output with individual thresholds of, respectively, 28 µJ/cm(2), 11 µJ/cm(2) and 32 µJ/cm(2) (for 5 ns pump pulses). The second device format has the three DFB lasers, respectively the red, green and blue laser, vertically stacked onto the flexible glass. This device format emits a white laser output for an optical pump fluence above 42 µJ/cm(2).

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOEpatents

Li, Ting [Ventura, CA

2011-04-26

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

Generation and erasure of femtosecond laser-induced periodic surface structures on nanoparticle-covered silicon by a single laser pulse.

PubMed

Yang, Ming; Wu, Qiang; Chen, Zhandong; Zhang, Bin; Tang, Baiquan; Yao, Jianghong; Drevensek-Olenik, Irena; Xu, Jingjun

2014-01-15

We experimentally show that the generation and erasure of femtosecond laser-induced periodic surface structures on nanoparticle-covered silicon inducted by irradiation with a single laser pulse (800 nm, 120 fs, linear polarization) depend on the pulse fluence. We propose that this is due to competition between periodic surface structuring originating from the interference of incident light with surface plasmon polaritons and surface smoothing associated with surface melting. Experimental results are supported by theoretical analysis of transient surface modifications based on combining the two-temperature model and the Drude model.

Ultrashort laser pulses and electromagnetic pulse generation in air and on dielectric surfaces.

PubMed

Sprangle, P; Peñano, J R; Hafizi, B; Kapetanakos, C A

2004-06-01

Intense, ultrashort laser pulses propagating in the atmosphere have been observed to emit sub-THz electromagnetic pulses (EMPS). The purpose of this paper is to analyze EMP generation from the interaction of ultrashort laser pulses with air and with dielectric surfaces and to determine the efficiency of conversion of laser energy to EMP energy. In our self-consistent model the laser pulse partially ionizes the medium, forms a plasma filament, and through the ponderomotive forces associated with the laser pulse, drives plasma currents which are the source of the EMP. The propagating laser pulse evolves under the influence of diffraction, Kerr focusing, plasma defocusing, and energy depletion due to electron collisions and ionization. Collective effects and recombination processes are also included in the model. The duration of the EMP in air, at a fixed point, is found to be a few hundred femtoseconds, i.e., on the order of the laser pulse duration plus the electron collision time. For steady state laser pulse propagation the flux of EMP energy is nonradiative and axially directed. Radiative EMP energy is present only for nonsteady state or transient laser pulse propagation. The analysis also considers the generation of EMP on the surface of a dielectric on which an ultrashort laser pulse is incident. For typical laser parameters, the power and energy conversion efficiency from laser radiation to EMP radiation in both air and from dielectric surfaces is found to be extremely small, < 10(-8). Results of full-scale, self-consistent, numerical simulations of atmospheric and dielectric surface EMP generation are presented. A recent experiment on atmospheric EMP generation is also simulated.

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A.; Shashkin, I. S.; Bobretsova, Yu. K.

2016-10-15

Pulse-pumped MOVPE-fabricated (metal-organic vapor-phase epitaxy) semiconductor lasers emitting in the spectral ranges 1000–1100 and 1400–1600 nm at temperatures of 110–120 K are studied. It is found that cooling the lasers for both spectral ranges to low temperature results in their light–current curves approaching linearity, and an optical power of, respectively, 110 and 20 W can be attained. The low-temperature effect is reduced for lasers emitting in the spectral range 1400–1600 nm. The processes affecting a rise in the internal optical loss in semiconductor lasers are considered. It is shown that an increase in the carrier concentration in the waveguide ofmore » a laser structure greatly depends on temperature and is determined by the noninstantaneous capture (capture rate) of carriers from the waveguide into the active region. It is demonstrated that, upon lowering the temperature to 115K, the concentration of electrons and holes in the waveguide becomes lower, which leads to a significant decrease in the internal optical loss and to an increase in the output optical power of the semiconductor laser.« less

Precise optical dosimetry in low-level laser therapy of soft tissues in oral cavity

NASA Astrophysics Data System (ADS)

Stoykova, Elena V.; Sabotinov, O.

2004-06-01

The new low level laser therapy (LLLT) is widely applied for treatment of diseases of the oral mucosa and parodont. Depending on indication, different optical tips and light-guides are used to create beams with a required shape. However, to the best of our knowledge, the developed irradiation geometries are usually proposed assuming validity of Bouger-Lambert law. This hardly corresponds to the real situation because of the dominating multiple scattering within 600-1200 nm range that destroys correlation between the emitted laser beam and the spatial distribution of the absorbed dose inside the tissue. The aim of this work is to base the dosimetry of the LLLT procedures of periodontal tissues on radiation transfer theory using a flexible Monte-Carlo code. We studied quantitatively the influence of tissue optical parameters (absorption and scattering coefficients, tissue refraction index, anisotropy factor) on decreasing of correlation between the emitted beam and the energy deposition for converging or diverging beams. We evaluated energy deposition for the developed by us LLLT system in a 3-D model of periodontal tissues created using a cross-sectional image of this region with internal structural information on the gingival and the tooth. The laser source is a CW diode laser emitting elliptical beam within 650-675 nm at output power 5-30 mW. To determine the geometry of the irradiating beam we used CCD camera Spiricon LBA 300.

Nanosecond laser-induced ablation and laser-induced shockwave structuring of polymer foils down to sub-μm patterns

NASA Astrophysics Data System (ADS)

Lorenz, P.; Bayer, L.; Ehrhardt, M.; Zimmer, K.; Engisch, L.

2015-03-01

Micro- and nanostructures exhibit a growing commercial interest where a fast, cost-effective, and large-area production is attainable. Laser methods have a great potential for the easy fabrication of surface structures into flexible polymer foils like polyimide (PI). In this study two different concepts for the structuring of polymer foils using a KrF excimer laser were tested and compared: the laser-induced ablation and the laser-induced shock wave structuring. The direct front side laser irradiation of these polymers allows the fabrication of different surface structures. For example: The low laser fluence treatment of PI results in nano-sized cone structures where the cone density can be controlled by the laser parameters. This allows inter alia the laser fabrication of microscopic QR code and high-resolution grey-tone images. Furthermore, the laser treatment of the front side of the polymer foil allows the rear side structuring due to a laserinduced shock wave. The resultant surface structures were analysed by optical and scanning electron microscopy (SEM) as well as white light interferometry (WLI).

Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

PubMed

Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

2015-09-25

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

Dynamic features of bubble induced by a nanosecond pulse laser in still and flowing water

NASA Astrophysics Data System (ADS)

Charee, Wisan; Tangwarodomnukun, Viboon

2018-03-01

Underwater laser ablation techniques have been developed and employed to synthesis nanoparticles, to texture workpiece surface and to assist the material removal in laser machining process. However, the understanding of laser-material-water interactions, bubble formation and effects of water flow on ablation performance has still been very limited. This paper thus aims at exploring the formation and collapse of bubbles during the laser ablation of silicon in water. The effects of water flow rate on bubble formation and its consequences to the laser disturbance and cut features obtained in silicon were observed by using a high speed camera. A nanosecond pulse laser emitting the laser pulse energy of 0.2-0.5 mJ was employed in the experiment. The results showed that the bubble size was found to increase with the laser pulse energy. The use of high water flow rate can importantly facilitate the ejection of ablated particles from the workpiece surface, hence resulting in less deposition to the work surface and minimizing any disturbance to the laser beam during the ablation in water. Furthermore, a clean micro-groove in silicon wafer can successfully be produced when the process was performed in the high water flow rate condition. The findings of this study could provide an essential guideline for process selection, control and improvement in the laser micro-/submicro-fabrication using the underwater technique.

Alignment of the hydrogen molecule under intense laser fields

DOE PAGES

Lopez, Gary V.; Fournier, Martin; Jankunas, Justin; ...

2017-06-01

Alignment, dissociation and ionization of H 2 molecules in the ground or the electronically excited E,F state of the H 2 molecule are studied and contrasted using the Velocity Mapping Imaging (VMI) technique. Photoelectron images from nonresonant 7-, 8- and 9-photon radiation ionization of H 2 show that the intense laser fields create ponderomotive shifts in the potential energy surfaces and distort the velocity of the emitted electrons that are produced from ionization. Photofragment images of H+ due to the dissociation mechanism that follows the 2-photon excitation into the (E,F; v = 0, J = 0, 1) electronic state showmore » a strong dependence on laser intensity, which is attributed to the high polarizability of the H 2 (E,F) state. For transitions from the J = 0 state, particularly, we observe marked structure in the angular distribution, which we explain as the interference between the prepared J = 0 and Stark-mixed J = 2 rovibrational states of H 2, as the laser intensity increases. Quantification of these effects allows us to extract the molecular polarizability of the H 2 (E,F) state, and yields a value of 103 ± 37 A.U.« less

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

NASA Astrophysics Data System (ADS)

Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.

2018-03-01

AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm-2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.

Alignment of the hydrogen molecule under intense laser fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lopez, Gary V.; Fournier, Martin; Jankunas, Justin

Alignment, dissociation and ionization of H 2 molecules in the ground or the electronically excited E,F state of the H 2 molecule are studied and contrasted using the Velocity Mapping Imaging (VMI) technique. Photoelectron images from nonresonant 7-, 8- and 9-photon radiation ionization of H 2 show that the intense laser fields create ponderomotive shifts in the potential energy surfaces and distort the velocity of the emitted electrons that are produced from ionization. Photofragment images of H+ due to the dissociation mechanism that follows the 2-photon excitation into the (E,F; v = 0, J = 0, 1) electronic state showmore » a strong dependence on laser intensity, which is attributed to the high polarizability of the H 2 (E,F) state. For transitions from the J = 0 state, particularly, we observe marked structure in the angular distribution, which we explain as the interference between the prepared J = 0 and Stark-mixed J = 2 rovibrational states of H 2, as the laser intensity increases. Quantification of these effects allows us to extract the molecular polarizability of the H 2 (E,F) state, and yields a value of 103 ± 37 A.U.« less

Structured optical vortices with broadband comb-like optical spectra in Yb:Y3Al5O12/YVO4 Raman microchip laser

NASA Astrophysics Data System (ADS)

Dong, Jun; Wang, Xiaolei; Zhang, Mingming; Wang, Xiaojie; He, Hongsen

2018-04-01

Structured optical vortices with 4 phase singularities have been generated in a laser diode pumped continuous-wave Yb:Y3Al5O12/YVO4 (Yb:YAG/YVO4) Raman microchip laser. The broadband comb-like first order Stokes laser emitting spectrum including 30 longitudinal modes covers from 1072.49 nm to 1080.13 nm with a bandwidth of 7.64 nm, which is generated with the Raman shift 259 cm-1 of the c-cut YVO4 crystal converted from the fundamental laser around 1.05 μm. Pump power dependent optical vortex beams are attributed to overlap of the Stokes laser field with the fundamental laser field caused by dynamically changing the coupling losses of the fundamental laser field. The maximum output power is 1.16 W, and the optical-to-optical efficiency is 18.4%. This work provides a method for generating structured optical vortices with an optical frequency comb in solid-state Raman microchip lasers, which have potential applications in quantum computations, micro-machining, and information processing.

One-step synthesis and patterning of aligned polymer nanowires on a substrate

DOEpatents

Wang, Zhong L [Marietta, GA; Wang, Xudong [Atlanta, GA; Morber, Jenny R [Atlanta, GA; Liu, Jin [Danbury, CT

2011-11-08

In a method of making a polymer structure on a substrate a layer of a first polymer, having a horizontal top surface, is applied to a surface of the substrate. An area of the top surface of the polymer is manipulated to create an uneven feature that is plasma etched to remove a first portion from the layer of the first polymer thereby leaving the polymer structure extending therefrom. A light emitting structure includes a conductive substrate from which an elongated nanostructure of a first polymer extends. A second polymer coating is disposed about the nanostructure and includes a second polymer, which includes a material such that a band gap exists between the second polymer coating and the elongated nanostructure. A conductive material coats the second polymer coating. The light emitting structure emits light when a voltage is applied between the conductive substrate and the conductive coating.

Feasibility Analysis and Demonstration of High-Speed Digital Imaging Using Micro-Arrays of Vertical Cavity Surface-Emitting Lasers

DTIC Science & Technology

2011-04-01

Proceedings, Bristol, UK (2006). 5. M. A. Mentzer, Applied Optics Fundamentals and Device Applications: Nano, MOEMS , and Biotechnology, CRC Taylor...ballistic sensing, flash x-ray cineradiography, digital image correlation, image processing al- gorithms, and applications of MOEMS to nano- and

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

Evaluation of laser speckle contrast imaging as an intrinsic method to monitor blood brain barrier integrity

PubMed Central

Dufour, Suzie; Atchia, Yaaseen; Gad, Raanan; Ringuette, Dene; Sigal, Iliya; Levi, Ofer

2013-01-01

The integrity of the blood brain barrier (BBB) can contribute to the development of many brain disorders. We evaluate laser speckle contrast imaging (LSCI) as an intrinsic modality for monitoring BBB disruptions through simultaneous fluorescence and LSCI with vertical cavity surface emitting lasers (VCSELs). We demonstrated that drug-induced BBB opening was associated with a relative change of the arterial and venous blood velocities. Cross-sectional flow velocity ratio (veins/arteries) decreased significantly in rats treated with BBB-opening drugs, ≤0.81 of initial values. PMID:24156049

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Matrix laser IR-visible image converter

NASA Astrophysics Data System (ADS)

Lipatov, N. I.; Biryukov, A. S.

2006-04-01

A new type of a focal matrix IR-visible image converter is proposed. The pixel IR detectors of the matrix are tunable microcavities of VCSEL (vertical-cavity surface emitting laser) semiconductor microstructures. The image conversion is performed due to the displacements of highly reflecting cavity mirrors caused by thermoelastic stresses in their microsuspensions appearing upon absorption of IR radiation. Analysis of the possibilities of the converter shows that its sensitivity is 10-3-10-2 K and the time response is 10-4-10-3 s. These characteristics determine the practical application of the converter.

Laser surface structuring of AZ31 Mg alloy for controlled wettability.

PubMed

Gökhan Demir, Ali; Furlan, Valentina; Lecis, Nora; Previtali, Barbara

2014-06-01

Structured surfaces exhibit functional properties that can enhance the performance of a bioimplant in terms of biocompatibility, adhesion, or corrosion behavior. In order to tailor the surface property, chemical and physical methods can be used in a sequence of many steps. On the other hand, laser surface processing can provide a single step solution to achieve the designated surface function with the use of simpler equipment and high repeatability. This work provides the details on the surface structuring of AZ31, a biocompatible and biodegradable Mg alloy, by a single-step laser surface structuring based on remelting. The surfaces are characterized in terms of topography, chemistry, and physical integrity, as well as the effective change in the surface wetting behavior is demonstrated. The results imply a great potential in local or complete surface structuring of medical implants for functionalization by the flexible positioning of the laser beam.

High duty cycle far-infrared germanium lasers

NASA Astrophysics Data System (ADS)

Chamberlin, Danielle Russell

The effects of crystal geometry, heat transport, and optics on high duty cycle germanium hole population inversion lasers are investigated. Currently the laser's low duty cycle limits its utility for many applications. This low duty cycle is a result of the combination of the large electrical input power necessary and insufficient heat extraction. In order to achieve a continuous-wave device, the input power must be decreased and the cooling power increased. In order to improve laser efficiency and lower the input power, the effect of laser crystal geometry on the electric field uniformity is considered. Geometries with d/L>>1 or <<1 are shown to have improved electric field uniformity, where d is the distance between electrical contacts and L is the length in the direction of the Hall electric field. A geometry with d/L>>1 is shown to decrease the threshold voltage for lasing. Laser crystals with the traditional contact geometry have been compared to a new, planar contact design with both electrical contacts on the same side of the laser crystal. This new geometry provides a large d/L ratio while also allowing effective heat sinking. A pure, single-crystal silicon heat sink is developed for planar contact design lasers, which improves the duty cycle tenfold. For the traditional contact design, copper heat sinks are developed that demonstrate cooling powers up to 10 Watts. The effects of thermal conductivity, surface area, and interfacial thermal resistance on the heat transport are compared. To improve the cavity quality, thereby allowing for smaller crystal volumes, new optical designs are investigated. A vertical cavity structure is demonstrated for the planar contact structure using strontium titanate single crystals as mirrors. A mode-selecting cavity is implemented for the traditional contact design. The spectra of small-volume, near-threshold lasers are measured. In contrast to the emission of larger lasers, these lasers emit within narrow frequency peaks that do not shift smoothly with magnetic field. The details of the emission are shown to strongly depend on the optical cavity. A record duty cycle of 5% is achieved using a laser of dimensions 0.80 x 3 x 11 mm3 with the traditional contact geometry, improved copper heat sinks, and carefully etched crystal surfaces.

Exploring Ramsey-coherent population trapping atomic clock realized with pulsed microwave modulated laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jing; Yun, Peter; Tian, Yuan

2014-03-07

A scheme for a Ramsey-coherent population trapping (CPT) atomic clock that eliminates the acousto-optic modulator (AOM) is proposed and experimentally studied. Driven by a periodically microwave modulated current, the vertical-cavity surface-emitting laser emits a continuous beam that switches between monochromatic and multichromatic modes. Ramsey-CPT interference has been studied with this mode-switching beam. In eliminating the AOM, which is used to generate pulsed laser in conventional Ramsey-CPT atomic clock, the physics package of the proposed scheme is virtually the same as that of a conventional compact CPT atomic clock, although the resource budget for the electronics will slightly increase as amore » microwave switch should be added. By evaluating and comparing experimentally recorded signals from the two Ramsey-CPT schemes, the short-term frequency stability of the proposed scheme was found to be 46% better than the scheme with AOM. The experimental results suggest that the implementation of a compact Ramsey-CPT atomic clock promises better frequency stability.« less

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ting

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE processmore » is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.« less

Active terahertz metamaterial devices

DOEpatents

Chen, Houtong; Padilla, Willie John; Averitt, Richard Douglas; O'Hara, John F.; Lee, Mark

2010-11-02

Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.

Investigation of Carbon Fiber Reinforced Plastics Machining Using 355 nm Picosecond Pulsed Laser

NASA Astrophysics Data System (ADS)

Hu, Jun; Zhu, Dezhi

2018-06-01

Carbon fiber reinforced plastics (CFRP) has been widely used in the aircraft industry and automobile industry owing to its superior properties. In this paper, a Nd:YVO4 picosecond pulsed system emitting at 355 nm has been used for CFRP machining experiments to determine optimum milling conditions. Milling parameters including laser power, milling speed and hatch distance were optimized by using box-behnken design of response surface methodology (RSM). Material removal rate was influenced by laser beam overlap ratio which affects mechanical denudation. The results in heat affected zones (HAZ) and milling quality were discussed through the machined surface observed with scanning electron microscope. A re-focusing technique based on the experiment with different focal planes was proposed and milling mechanism was also analyzed in details.

VCSEL proliferation

NASA Astrophysics Data System (ADS)

Tatum, Jim

2007-02-01

Since the commercialization of Vertical Cavity Surface Emitting Lasers (VCSELs) in 1996, Finisar's Advanced Optical Components Division has shipped well over 50 Million VCSELs. The vast majority of these were shipped into the data communications industry, which was essentially the only volume application until 2005. The driver for VCSEL manufacturing might well shift to the increasingly popular laser based optical mouse. The advantages of the laser based mouse over traditional LED mice include operation on a wider range of surfaces, higher resolution, and increased battery lifetime. What is the next application that will drive growth in VCSELs? This paper will offer a historical perspective on the emergence of VCSELs from the laboratory to reality, and the companies that have played key roles in VCSEL commercialization. Furthermore, a perspective on the market needs of future VCSEL development and applications is described.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Liquid phase epitaxial growth of GaInAsP/InP laser structures

NASA Astrophysics Data System (ADS)

Nohavica, D.; Têminová, J.; Berková, D.; Zagrádková, M.; Kortan, I.; Zelinka, I.; Walachová, I.; Malina, V.

1988-11-01

A modified single-phase liquid phase epitaxy method was developed on the basis of a novel variant of the growth boat. The method was used to grow GaInAsP/InP double heterostructures for lasers emitting at 1.3 and 1.55 μm. The main properties of wide-contact diodes (radiation power and threshold current density) were adopted as the characteristics of the quality of heterostructures characterized by different configurations of active and guiding layers. The quality of the structure was confirmed by the fabrication of laser diodes of the following types: stripe with oxide insulation, clad-ridge waveguide, and double-channel planar buried.

Temporal coherence of high-order harmonics generated at solid surfaces

NASA Astrophysics Data System (ADS)

Hemmers, D.; Behmke, M.; Karsch, S.; Keyling, J.; Major, Z.; Stelzmann, C.; Pretzler, G.

2014-07-01

We present interferometric measurements of the temporal coherence of high-order harmonics generated by reflection of a titanium sapphire laser off a solid surface. It is found that the coherence length of the harmonic emission is significantly reduced compared with the bandwidth limited case. To identify the responsible mechanism, the acquired data were analyzed by means of particle-in-cell simulations, whose results show good agreement between the calculated spectra and the measured coherence times. We show that the observed broadening can be understood consistently by the occurrence of a Doppler shift induced by the moving plasma surface, which is dented by the radiation pressure of the laser pulse. In this case, this Doppler effect would also lead to positive chirp of the emitted radiation.

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Ab initio investigation of barium-scandium-oxygen coatings on tungsten for electron emitting cathodes

NASA Astrophysics Data System (ADS)

Vlahos, Vasilios; Booske, John H.; Morgan, Dane

2010-02-01

Microwave, x-ray, and radio-frequency radiation sources require a cathode emitting electrons into vacuum. Thermionic B-type dispenser cathodes consist of BaxOz coatings on tungsten (W), where the surface coatings lower the W work function and enhance electron emission. The new and promising class of scandate cathodes modifies the B-type surface through inclusion of Sc, and their superior emissive properties are also believed to stem from the formation of a low work function surface alloy. In order to better understand these cathode systems, density-functional theory (DFT)-based ab initio modeling is used to explore the stability and work function of BaxScyOz on W(001) monolayer-type surface structures. It is demonstrated how surface depolarization effects can be calculated easily using ab initio calculations and fitted to an analytic depolarization equation. This approach enables the rapid extraction of the complete depolarization curve (work function versus coverage relation) from relatively few DFT calculations, useful for understanding and characterizing the emitting properties of novel cathode materials. It is generally believed that the B-type cathode has some concentration of Ba-O dimers on the W surface, although their structure is not known. Calculations suggest that tilted Ba-O dimers are the stable dimer surface configuration and can explain the observed work function reduction corresponding to various dimer coverages. Tilted Ba-O dimers represent a new surface coating structure not previously proposed for the activated B-type cathode. The thermodynamically stable phase of Ba and O on the W surface was identified to be the Ba0.25O configuration, possessing a significantly lower Φ value than any of the Ba-O dimer configurations investigated. The identification of a more stable Ba0.25O phase implies that if Ba-O dimers cover the surface of emitting B-type cathodes, then a nonequilibrium steady state must dominate the emitting surface. The identification of a stable and low work function Ba0.25Sc0.25O structure suggests that addition of Sc to the B-type cathode surface could form this alloy structure under operating conditions, leading to improved cathode performance and stability. Detailed comparison to previous experimental results of BaxScyOz on W surface coatings are made to both validate the modeling and aid in interpretation of experimental data. The studies presented here demonstrate that ab initio methods are powerful for understanding the fundamental physics of electron emitting materials systems and can potentially aid in the development of improved cathodes.

Near-field analysis of metallic DFB lasers at telecom wavelengths.

PubMed

Greusard, L; Costantini, D; Bousseksou, A; Decobert, J; Lelarge, F; Duan, G-H; De Wilde, Y; Colombelli, R

2013-05-06

We image in near-field the transverse modes of semiconductor distributed feedback (DFB) lasers operating at λ ≈ 1.3 μm and employing metallic gratings. The active region is based on tensile-strained InGaAlAs quantum wells emitting transverse magnetic polarized light and is coupled via an extremely thin cladding to a nano-patterned gold grating integrated on the device surface. Single mode emission is achieved, which tunes with the grating periodicity. The near-field measurements confirm laser operation on the fundamental transverse mode. Furthermore--together with a laser threshold reduction observed in the DFB lasers--it suggests that the patterning of the top metal contact can be a strategy to reduce the high plasmonic losses in this kind of systems.

1310nm VCSELs in 1-10Gb/s commercial applications

NASA Astrophysics Data System (ADS)

Jewell, Jack; Graham, Luke; Crom, Max; Maranowski, Kevin; Smith, Joseph; Fanning, Tom

2006-02-01

Beginning with 4 Gigabit/sec Fibre-Channel, 1310nm vertical-cavity surface-emitting lasers (VCSELs) are now entering the marketplace. Such VCSELs perform like distributed feedback lasers but have drive currents and heat dissipation like 850nm VCSELs, making them ideal for today's high-performance interconnects and the only choice for the next step in increased interconnection density. Transceiver performances at 4 and 10 Gigabits/sec over fiber lengths 10-40km are presented. The active material is extremely robust, resulting in excellent reliability.

Thermal resistance of etched-pillar vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Wipiejewski, Torsten; Peters, Matthew G.; Young, D. Bruce; Thibeault, Brian; Fish, Gregory A.; Coldren, Larry A.

1996-03-01

We discuss our measurements on thermal impedance and thermal crosstalk of etched-pillar vertical-cavity lasers and laser arrays. The average thermal conductivity of AlAs-GaAs Bragg reflectors is estimated to be 0.28 W/(cmK) and 0.35W/(cmK) for the transverse and lateral direction, respectively. Lasers with a Au-plated heat spreading layer exhibit a 50% lower thermal impedance compared to standard etched-pillar devices resulting in a significant increase of maximum output power. For an unmounted laser of 64 micrometer diameter we obtain an improvement in output power from 20 mW to 42 mW. The experimental results are compared with a simple analytical model showing the importance of heat sinking for maximizing the output power of vertical-cavity lasers.

Photonic structures in diamond based on femtosecond UV laser induced periodic surface structuring (LIPSS).

PubMed

Granados, Eduardo; Martinez-Calderon, Miguel; Gomez, Mikel; Rodriguez, Ainara; Olaizola, Santiago M

2017-06-26

We study the fabrication of photonic surface structures in single crystal diamond by means of highly controllable direct femtosecond UV laser induced periodic surface structuring. By appropriately selecting the excitation wavelength, intensity, number of impinging pulses and their polarization state, we demonstrate emerging high quality and fidelity diamond grating structures with surface roughness below 1.4 nm. We characterize their optical properties and study their potential for the fabrication of photonic structure anti-reflection coatings for diamond Raman lasers in the near-IR.

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes.

PubMed

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R; Castillo, Gabriel R; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-08-07

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips.

THz polariton laser using an intracavity Mg:LiNbO₃ crystal with protective Teflon coating.

PubMed

Ortega, Tiago A; Pask, Helen M; Spence, David J; Lee, Andrew J

2017-02-20

An enhancement in the performance of a THz polariton laser based on an intracavity magnesium-doped lithium niobate crystal (Mg:LiNbO₃) in surface-emitted (SE) configuration is demonstrated resulting from the deposition of a protective Teflon coating on the total internal reflection surface of the crystal. In this cavity geometry the resonating fields undergo total internal reflection (TIR) inside the lithium niobate, and laser damage to that surface can be a limiting factor in performance. The protective layer prevents laser damage to the crystal surface, enabling higher pump power, yielding higher THz output power and wider frequency tuning range. With the unprotected crystal, narrow-band THz output tunable from 1.50 to 2.81 THz was produced, with maximum average output power of 20.1 µW at 1.76 THz for 4 W diode pump power (limited by laser damage to the crystal). With the Teflon coating, no laser damage to the crystal was observed, and the system produced narrow-band THz output tunable from 1.46 to 3.84 THz, with maximum average output power of 56.8 µW at 1.76 THz for 6.5 W diode pump power. This is the highest average output power and the highest diode-to-terahertz conversion efficiency ever reported for an intracavity terahertz polariton laser.

Direct femtosecond laser surface structuring of crystalline silicon at 400 nm

NASA Astrophysics Data System (ADS)

Nivas, Jijil JJ; Anoop, K. K.; Bruzzese, Riccardo; Philip, Reji; Amoruso, Salvatore

2018-03-01

We have analyzed the effects of the laser pulse wavelength (400 nm) on femtosecond laser surface structuring of silicon. The features of the produced surface structures are investigated as a function of the number of pulses, N, and compared with the surface textures produced by more standard near-infrared (800 nm) laser pulses at a similar level of excitation. Our experimental findings highlight the importance of the light wavelength for the formation of the supra-wavelength grooves, and, for a large number of pulses (N ≈ 1000), the generation of other periodic structures (stripes) at 400 nm, which are not observed at 800 nm. These results provide interesting information on the generation of various surface textures, addressing the effect of the laser pulse wavelength on the generation of grooves and stripes.

Destruction of monocrystalline silicon with nanosecond pulsed fiber laser accompanied by the oxidation of ablation microparticles

NASA Astrophysics Data System (ADS)

Veiko, V. P.; Skvortsov, A. M.; Huynh, C. T.; Petrov, A. A.

2013-11-01

In this work, we report an observation of process of local destruction monocrystalline silicon with a scanning beam irradiation of pulse ytterbium fiber laser with a wavelength λ= 1062 nm, accompanied by the oxidation of ablation microparticles. It is shown that depending on the power density of irradiation was observed a large scatter size of the microparticles. From a certain average power density is observed beginning oxidation particulate emitted from the surface of the irradiated area. By varying the parameters of the laser beam such as scanning speed, pulse repetition rate, overlap of laser spot, radiation dose can be achieved almost complete oxidation of all formed during the ablation of microparticles.

Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

PubMed

Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

2009-02-10

Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

Thermal radiation scanning tunnelling microscopy

NASA Astrophysics Data System (ADS)

de Wilde, Yannick; Formanek, Florian; Carminati, Rémi; Gralak, Boris; Lemoine, Paul-Arthur; Joulain, Karl; Mulet, Jean-Philippe; Chen, Yong; Greffet, Jean-Jacques

2006-12-01

In standard near-field scanning optical microscopy (NSOM), a subwavelength probe acts as an optical `stethoscope' to map the near field produced at the sample surface by external illumination. This technique has been applied using visible, infrared, terahertz and gigahertz radiation to illuminate the sample, providing a resolution well beyond the diffraction limit. NSOM is well suited to study surface waves such as surface plasmons or surface-phonon polaritons. Using an aperture NSOM with visible laser illumination, a near-field interference pattern around a corral structure has been observed, whose features were similar to the scanning tunnelling microscope image of the electronic waves in a quantum corral. Here we describe an infrared NSOM that operates without any external illumination: it is a near-field analogue of a night-vision camera, making use of the thermal infrared evanescent fields emitted by the surface, and behaves as an optical scanning tunnelling microscope. We therefore term this instrument a `thermal radiation scanning tunnelling microscope' (TRSTM). We show the first TRSTM images of thermally excited surface plasmons, and demonstrate spatial coherence effects in near-field thermal emission.

Coherence switching of a vertical-cavity semiconductor-laser for multimode biomedical imaging (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cao, Hui; Knitter, Sebastian; Liu, Changgeng; Redding, Brandon; Khokha, Mustafa Kezar; Choma, Michael Andrew

2017-02-01

Speckle formation is a limiting factor when using coherent sources for imaging and sensing, but can provide useful information about the motion of an object. Illumination sources with tunable spatial coherence are therefore desirable as they can offer both speckled and speckle-free images. Efficient methods of coherence switching have been achieved with a solid-state degenerate laser, and here we demonstrate a semiconductor-based degenerate laser system that can be switched between a large number of mutually incoherent spatial modes and few-mode operation. Our system is designed around a semiconductor gain element, and overcomes barriers presented by previous low spatial coherence lasers. The gain medium is an electrically-pumped vertical external cavity surface emitting laser (VECSEL) with a large active area. The use of a degenerate external cavity enables either distributing the laser emission over a large ( 1000) number of mutually incoherent spatial modes or concentrating emission to few modes by using a pinhole in the Fourier plane of the self-imaging cavity. To demonstrate the unique potential of spatial coherence switching for multimodal biomedical imaging, we use both low and high spatial coherence light generated by our VECSEL-based degenerate laser for imaging embryo heart function in Xenopus, an important animal model of heart disease. The low-coherence illumination is used for high-speed (100 frames per second) speckle-free imaging of dynamic heart structure, while the high-coherence emission is used for laser speckle contrast imaging of the blood flow.

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru

2015-02-15

A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

Ultrafast monoenergetic electron source by optical waveform control of surface plasmons.

PubMed

Dombi, Péter; Rácz, Péter

2008-03-03

We propose coherent control of photoelectron acceleration at metal surfaces mediated by surface plasmon polaritons. A high degree of spectral and spatial control of the emission process can be exercised by amplitude and phase controlling the optical waveform (including the carrier-envelope phase) of the plasmon generating few-cycle laser pulse. Numerical results show that the emitted electron beam is highly directional and monoenergetic suggesting applications in contemporary ultrafast methods where ultrashort, well-behaved electron pulses are required.

Metal surface coloration by oxide periodic structures formed with nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Veiko, Vadim; Karlagina, Yulia; Moskvin, Mikhail; Mikhailovskii, Vladimir; Odintsova, Galina; Olshin, Pavel; Pankin, Dmitry; Romanov, Valery; Yatsuk, Roman

2017-09-01

In this work, we studied a method of laser-induced coloration of metals, where small-scale spatially periodic structures play a key role in the process of color formation. The formation of such structures on a surface of AISI 304 stainless steel was demonstrated for the 1.06 μm fiber laser with nanosecond duration of pulses and random (elliptical) polarization. The color of the surface depends on the period, height and orientation of periodic surface structures. Adjustment of the polarization of the laser radiation or change of laser incidence angle can be used to control the orientation of the structures. The formation of markings that change their color under the different viewing angles becomes possible. The potential application of the method is metal product protection against falsification.

Metasurface quantum-cascade laser with electrically switchable polarization

DOE PAGES

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.; ...

2017-04-20

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Metasurface quantum-cascade laser with electrically switchable polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR)more » range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.« less

Polarization and fluence effects in femtosecond laser induced micro/nano structures on stainless steel with antireflection property

NASA Astrophysics Data System (ADS)

Yao, Caizhen; Ye, Yayun; Jia, Baoshen; Li, Yuan; Ding, Renjie; Jiang, Yong; Wang, Yuxin; Yuan, Xiaodong

2017-12-01

In this paper, micro/nano structures on stainless steel were prepared in single spot irradiation mode and scan mode by using femtosecond laser technique. The influence of polarization and fluence on the formation of micro/nano structures were explored. Surface morphology, microstructure, roughness and composition of prepared samples were characterized. The antireflection property and wettability of laser treated samples were also tested and compared with that of original stainless steel.Results showed that the laser-induced spot consists of two distinct regions due to the Gaussian beam profile: a core region of moth-eye-like structure and a peripheral region of nanoparticles-covered laser-induced periodic surface structure (NC-LIPSS). The proportion of the core region and dimension of micro/nano structure increase with increasing laser fluence. Polarization can be used to tune the direction of NC-LIPSS. Atomic ratios of Cr and Mn increase and atomic ratio of Ni decreases after laser irradiation. Oxygen is not detected on laser irradiated samples, indicating that oxidation reactions are not significant during the interaction process between femtosecond laser and 304 stainless steel. These are good for the application of stainless steel as its physical properties would not change or even enhanced. The overlaps between two laser scan lines significantly influence the surface roughness and should be controlled carefully during the preparation process. The laser irradiated surface has a better antireflection property in comparison with that of original stainless steel, which may due to the scattering and absorption of micro/nano structures. Contact angle of micro/nano structured stainless steel decreases with the increase of laser fluence. The hydrophilic property can be explained by Wenzel's model. The interference between the surface plasmon wave and the incident light wave leads to the formation of NC-LIPSS.

Influence of the laser pulse repetition rate and scanning speed on the morphology of Ag nanostructures fabricated by pulsed laser ablation of solid target in water

NASA Astrophysics Data System (ADS)

Nikolov, A. S.; Balchev, I. I.; Nedyalkov, N. N.; Kostadinov, I. K.; Karashanova, D. B.; Atanasova, G. B.

2017-11-01

Nanostructures of noble metal were produced by pulsed laser ablation in liquid. A solid Ag target was immersed in double distilled water and a CuBr laser in a master oscillator—power amplifier configuration oscillating at 511 nm and emitting pulses with duration of 30 ns at a repetition rate of up to 20 kHz was employed to produce different colloids. The impact was studied of the laser pulse repetition rate and the beam scanning speed on the morphology of the nanostructures formed. Further, the optical extinction spectra of the colloids in the UV/VIS range were measured and used to make an indirect assessment of the changes in the shape and size distribution of the nanostructures. The transmission values in the near UV range were used to estimate the efficiency of the ablation process under the different experimental conditions implemented. A visualization of the nanostructures was made possible by transmission electron microscopy (TEM). The structure and phase composition of the nanoparticles were studied by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED), while the alteration of the target surface caused by the impact of the high-repetition-rate laser illumination was investigated by X-ray photoelectron spectroscopy (XPS). The optimal conditions were determined yielding the highest efficiency in terms of amount of ablated material.

Interaction of laser radiation with metal island films

NASA Astrophysics Data System (ADS)

Benditskii, A. A.; Viduta, L. V.; Ostranitsa, A. P.; Tomchuk, P. M.; Iakovlev, V. A.

1986-08-01

The emission phenomena arising during the interaction of pulsed laser emission with island films are examined with reference to experimental results obtained for island films of gold irradiated by a CO2 laser at a wavelength of 10.6 microns. Well reproducible emission pulses that are also accompanied by light pulses are produced at intensities less than 10 to the 5th W/sq cm, with the film structure remaining unchanged. The maximum energy of the electrons emitted under the effect of laser radiation is estimated at 3 eV; the work function is 2.1 eV.

Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Maximov, Mikhail V.; Omelchenko, Alexander V.

2015-05-01

Ways to improve beam divergence and energy consumption of quantum dot lasers emitting via the ground-state optical transitions by optimization of the key parameters of laser active region are discussed. It is shown that there exist an optimal cavity length, dispersion of inhomogeneous broadening and number of QD layers in active region allowing to obtain lasing spectrum of a given width at minimum injection current. The planar dielectric waveguide of the laser is optimized by analytical means for a better trade-off between high Γ-factor and low beam divergence.

Fabrication of two-dimensional periodic structures on silicon after scanning irradiation with femtosecond laser multi-beams

NASA Astrophysics Data System (ADS)

Pan, An; Si, Jinhai; Chen, Tao; Li, Cunxia; Hou, Xun

2016-04-01

Two-dimensional (2D) periodic structures were fabricated on silicon surfaces by femtosecond laser irradiation in air and water, with the assistance of a microlens array (MLA) placed in the beam's path. By scanning the laser beam along the silicon surface, multiple grooves were simultaneously fabricated in parallel along with smaller laser-induced ripples. The 2D periodic structures contained long-periodic grooves and perpendicular short-periodic laser-induced ripples, which had periods of several microns and several hundred nanometers, respectively. We investigated the influence of laser power and scanning velocity on the morphological evolution of the 2D periodic structures in air and water. Large-area grid-like structures with ripples were fabricated by successively scanning once along each direction of the silicon's surface, which showed enhanced optical absorption. Hydrofluoric acid was then used to remove any oxygen and laser-induced defects for all-silicon structures.

Laser-induced generation of surface periodic structures in media with nonlinear diffusion

NASA Astrophysics Data System (ADS)

Zhuravlev, V. M.; Zolotovskii, I. O.; Korobko, D. A.; Morozov, V. M.; Svetukhin, V. V.; Yavtushenko, I. O.; Yavtushenko, M. S.

2017-12-01

A model of fast formation of high-contrast periodic structure appearing on a semiconductor surface under action of laser radiation is proposed. The process of growing a surface structure due to the interaction surface plasmon- polaritons excited on nonequilibrium electrons with incident laser radiation are considered in the framework of a medium with nonlinear diffusion of nonequilibrium carriers (defects). A resonance effect of superfast pico- and subpicosecond amplification of the plasmon-polariton structure generated on the surface, the realization of which can result in a high-contrast defect lattice.

In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures

NASA Astrophysics Data System (ADS)

Breiland, William G.; Hou, Hong Q.; Chui, Herman C.; Hammons, Burrel E.

1997-04-01

In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial metal organic chemical vapor deposition reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of reflection high-energy electron diffraction in molecular beam epitaxy as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than 1 h. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded ±0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.

Holmium Doped Solid State Laser Resonantly Pumped and Q-Switched by Novel GaSb-Based Photonic Devices

DTIC Science & Technology

2011-08-31

dominant role of inter valence band absorption [7]. Details of the conduction band structure of the particular 0 20 40 60 80 100 0 10 20 30 CW 30s...here the n-cladding composition resulted into material with three valleys in conduction band to have almost the same energy minimum so no inter...emitting GaSb -based diode lasers was improved by utilization of the waveguide structure with asymmetric claddings. The AlGaAsSb p-cladding contained

Theoretical Aspects of Laser-Induced Periodic Surface Structure Formation,

DTIC Science & Technology

1983-11-01

r AD-A134 875 UNCLASSIFIED THEORETICAL ASPECTS OF LASER -INUUCtl) PtKlUUlt bUKhALt STRUCTURE FORMATION(U) ROCHESTER UNIV NY DEPT OF CHEMISTRY M...UR0CHESTER/DC/83/TR-43 2. COVT ACCESSION NO A. TITLE (and Subllllm) Theoretical Aspects of Laser -Induced Periodic Surface Structure Formation 7...publication in Laser -Controlled Chemical Processing of Surfaces, ed. by A. W. Johnson and D. J. Ehrlich (Elsevier, New York) 19 KEY WORDS (Continue

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Seongmo; Morgan, Daniel; Kesler, Amanda; Lachab, Mohamed; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Qhalid; Adivarahan, Vinod; Islam, Monirul; Khan, Asif

2011-03-01

Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well LED structures were grown by metal-organic chemical vapor deposition (MOCVD) on thick-AlN laterally overgrown on sapphire substrates. To fabricate the SFFC LEDs, a newly-developed laser-assisted ablation process was employed to separate the substrate from the LED chips. The chips had physical dimensions of 1100×900 µm2, and were comprised of four devices each with a 100×100 µm2 junction area. Electrical and optical characterization of the devices revealed no noticeable degradation to their performance due to the laser-lift-off process.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

X-ray laser system, x-ray laser and method

DOEpatents

London, Richard A.; Rosen, Mordecai D.; Strauss, Moshe

1992-01-01

Disclosed is an x-ray laser system comprising a laser containing generating means for emitting short wave length radiation, and means external to said laser for energizing said generating means, wherein when the laser is in an operative mode emitting radiation, the radiation has a transverse coherence length to width ratio of from about 0.05 to 1. Also disclosed is a method of adjusting the parameters of the laser to achieve the desired coherence length to laser width ratio.

Evaluating a vessel for suitability for containing fluid

DOEpatents

Barefield, II, James E.; Judge, Elizabeth J.; Le, Loan A.; Lopez, Leon N.; Beveridge, Andrew C.; Chapman, Daniel R.; Taylor, Seth T.

2017-05-30

A method for evaluating a vessel for suitability to contain a fluid includes providing a vessel and forming a polished surface portion of the vessel by removing oxidation and/or contaminants from a portion of the vessel. The method further includes applying a focused laser to the polished surface portion to form plasma on the polished surface portion, and determining whether the vessel is suitable for containing a fluid based on silicon content of the polished surface portion. The silicon content is estimated based on light emitted from the plasma.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

PubMed

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-01

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

Optical levitation and translation of a microscopic particle by use of multiple beams generated by vertical-cavity surface-emitting laser array sources.

PubMed

Ogura, Yusuke; Shirai, Nobuhiro; Tanida, Jun

2002-09-20

An optical levitation and translation method for a microscopic particle by use of the resultant force induced by multiple light beams is studied. We show dependence of the radiation pressure force on the illuminating distribution by numerical calculation, and we find that the strongest axial force is obtained by a specific spacing period of illuminating beams. Extending the optical manipulation technique by means of vertical-cavity surface-emitting laser (VCSEL) array sources [Appl. Opt. 40, 5430 (2001)], we are the first, to our knowledge, to demonstrate levitation of a particle and its translation while levitated by using a VCSEL array. The vertical position of the target particle can be controlled in a range of a few tens of micrometers with an accuracy of 2 microm or less. The analytical and experimental results suggest that use of multiple beams is an effective method to levitate a particle with low total illumination power. Some issues on the manipulation method that uses multiple beams are discussed.

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

NASA Astrophysics Data System (ADS)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

2008-04-01

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

Formation of periodic mesoscale structures arranged in a circular symmetry at the silicon surface exposed to radiation of a single femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Romashevskiy, S. A.; Ashitkov, S. I.; Ovchinnikov, A. V.; Kondratenko, P. S.; Agranat, M. B.

2016-06-01

The periodic mesoscale structures arranged in a circular symmetry were found at the silicon surface exposed to radiation of the single femtosecond laser pulse with a Gaussian intensity profile in the ambient air conditions. These peculiar structures have the appearance of the protrusions of ∼10 nm height and of ∼600 nm width (at a FWHM) separately located inside the ablated region with a period of the incident laser wavelength. It was found that their position at the surface corresponds to the specified laser intensity slightly above the ablation threshold. The number of the formed periodic structures varies with the fluence of the incident laser pulse and in our experiments it was found to have changed from one to eleven. We suppose that formation of these mesoscale structures is caused by heating of a microscale volume to the strongly defined temperature. The theoretical model was proposed to explain the obtained data. It assumes that the interference of incident laser radiation with laser-induced surface electromagnetic waves results in generation of periodic distribution of electron temperature. Thus formation of the periodic structures at the specified laser intensity is attributed to periodically modulated absorption of laser energy at a focal laser spot.

Layered surface structure of gas-atomized high Nb-containing TiAl powder and its impact on laser energy absorption for selective laser melting

NASA Astrophysics Data System (ADS)

Zhou, Y. H.; Lin, S. F.; Hou, Y. H.; Wang, D. W.; Zhou, P.; Han, P. L.; Li, Y. L.; Yan, M.

2018-05-01

Ti45Al8Nb alloy (in at.%) is designed to be an important high-temperature material. However, its fabrication through laser-based additive manufacturing is difficult to achieve. We present here that a good understanding of the surface structure of raw material (i.e. Ti45Al8Nb powder) is important for optimizing its process by selective laser melting (SLM). Detailed X-ray photoelectron spectroscopy (XPS) depth profiling and transmission electron microscopy (TEM) analyses were conducted to determine the surface structure of Ti45Al8Nb powder. An envelope structure (∼54.0 nm in thickness) was revealed for the powder, consisting of TiO2 + Nb2O5 (as the outer surface layer)/Al2O3 + Nb2O5 (as the intermediate layer)/Al2O3 (as the inner surface layer)/Ti45Al8Nb (as the matrix). During SLM, this layered surface structure interacted with the incident laser beam and improved the laser absorptivity of Ti45Al8Nb powder by ∼32.21%. SLM experiments demonstrate that the relative density of the as-printed parts can be realized to a high degree (∼98.70%), which confirms good laser energy absorption. Such layered surface structure with appropriate phase constitution is essential for promoting SLM of the Ti45Al8Nb alloy.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

PubMed

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.

PubMed

Lai, Fang-I; Yang, Jui-Fu

2013-05-17

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Physicochemical modifications accompanying UV laser induced surface structures on poly(ethylene terephthalate) and their effect on adhesion of mesenchymal cells.

PubMed

Rebollar, Esther; Pérez, Susana; Hernández, Margarita; Domingo, Concepción; Martín, Margarita; Ezquerra, Tiberio A; García-Ruiz, Josefa P; Castillejo, Marta

2014-09-07

This work reports on the formation of different types of structures on the surface of polymer films upon UV laser irradiation. Poly(ethylene terephthalate) was irradiated with nanosecond UV pulses at 193 and 266 nm. The polarization of the laser beam and the irradiation angle of incidence were varied, giving rise to laser induced surface structures with different shapes and periodicities. The irradiated surfaces were topographically characterized by atomic force microscopy and the chemical modifications induced by laser irradiation were inspected via micro-Raman and fluorescence spectroscopies. Contact angle measurements were performed with different liquids, and the results evaluated in terms of surface free energy components. Finally, in order to test the influence of surface properties for a potential application, the modified surfaces were used for mesenchymal stem cell culture assays and the effect of nanostructure and surface chemistry on cell adhesion was evaluated.

Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiO{sub x} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fricke-Begemann, T., E-mail: fricke-begemann@llg-ev.de; Ihlemann, J.; Wang, N.

2015-09-28

Silicon nanocrystals have been generated by laser induced phase separation in SiO{sub x} films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiO{sub x} films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 10{sup 5 }W/cm{sup 2}, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the centralmore » irradiated region is oxidized to SiO{sub 2} and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power.« less

Method and system for laser-based formation of micro-shapes in surfaces of optical elements

DOEpatents

Bass, Isaac Louis; Guss, Gabriel Mark

2013-03-05

A method of forming a surface feature extending into a sample includes providing a laser operable to emit an output beam and modulating the output beam to form a pulse train having a plurality of pulses. The method also includes a) directing the pulse train along an optical path intersecting an exposed portion of the sample at a position i and b) focusing a first portion of the plurality of pulses to impinge on the sample at the position i. Each of the plurality of pulses is characterized by a spot size at the sample. The method further includes c) ablating at least a portion of the sample at the position i to form a portion of the surface feature and d) incrementing counter i. The method includes e) repeating steps a) through d) to form the surface feature. The sample is free of a rim surrounding the surface feature.

Characterization of particle emission from laser printers.

PubMed

Scungio, Mauro; Vitanza, Tania; Stabile, Luca; Buonanno, Giorgio; Morawska, Lidia

2017-05-15

Emission of particles from laser printers in office environments is claimed to have impact on human health due to likelihood of exposure to high particle concentrations in such indoor environments. In the present paper, particle emission characteristics of 110 laser printers from different manufacturers were analyzed, and estimations of their emission rates were made on the basis of measurements of total concentrations of particles emitted by the printers placed in a chamber, as well as particle size distributions. The emission rates in terms of number, surface area and mass were found to be within the ranges from 3.39×10 8 partmin -1 to 1.61×10 12 partmin -1 , 1.06×10 0 mm 2 min -1 to 1.46×10 3 mm 2 min -1 and 1.32×10 -1 μgmin -1 to 1.23×10 2 μgmin -1 , respectively, while the median mode value of the emitted particles was found equal to 34nm. In addition, the effect of laser printing emissions in terms of employees' exposure in offices was evaluated on the basis of the emission rates, by calculating the daily surface area doses (as sum of alveolar and tracheobronchial deposition fraction) received assuming a typical printing scenario. In such typical printing conditions, a relatively low total surface area dose (2.7mm 2 ) was estimated for office employees with respect to other indoor microenvironments including both workplaces and homes. Nonetheless, for severe exposure conditions, characterized by operating parameters falling beyond the typical values (i.e. smaller office, lower ventilation, printer located on the desk, closer to the person, higher printing frequency etc.), significantly higher doses are expected. Copyright © 2017 Elsevier B.V. All rights reserved.

Radiation properties of two types of luminous textile devices containing plastic optical fibers

NASA Astrophysics Data System (ADS)

Selm, Bärbel; Rothmaier, Markus

2007-05-01

Luminous textiles have the potential to satisfy a need for thin and flexible light diffusers for treatment of intraoral cancerous tissue. Plastic optical fibers (POF) with diameters of 250 microns and smaller are used to make the textiles luminous. Usually light is supplied to the optical fiber at both ends. On the textile surface light emission occurs in a woven structure via damaged straight POFs, whereas the embroidered structure radiates the light out of macroscopically bent POFs. We compared the optical properties of these two types of textile diffusers using red light laser for the embroidery and light emitting diode (LED) for the woven structure as light sources, and found efficiencies for the luminous areas of the two samples of 19 % (woven) and 32 % (embroidery), respectively. It was shown that the efficiency can be greatly improved using an aluminium backing. Additional scattering layers lower the fluence rate by around 30 %. To analyse the homogeneity we took a photo of the illuminated surface using a 3CCD camera and found, for both textiles, a slightly skewed distribution of the dark and bright pixels. The interquartile range of brightness distribution of the embroidery is more than double as the woven structure.

Direct Femtosecond Laser Surface Structuring with Optical Vortex Beams Generated by a q-plate

PubMed Central

JJ Nivas, Jijil; He, Shutong; Rubano, Andrea; Vecchione, Antonio; Paparo, Domenico; Marrucci, Lorenzo; Bruzzese, Riccardo; Amoruso, Salvatore

2015-01-01

Creation of patterns and structures on surfaces at the micro- and nano-scale is a field of growing interest. Direct femtosecond laser surface structuring with a Gaussian-like beam intensity profile has already distinguished itself as a versatile method to fabricate surface structures on metals and semiconductors. Here we present an approach for direct femtosecond laser surface structuring based on optical vortex beams with different spatial distributions of the state of polarization, which are easily generated by means of a q-plate. The different states of an optical vortex beam carrying an orbital angular momentum ℓ = ±1 are used to demonstrate the fabrication of various regular surface patterns on silicon. The spatial features of the regular rippled and grooved surface structures are correlated with the state of polarization of the optical vortex beam. Moreover, scattered surface wave theory approach is used to rationalize the dependence of the surface structures on the local state of the laser beam characteristics (polarization and fluence). The present approach can be further extended to fabricate even more complex and unconventional surface structures by exploiting the possibilities offered by femtosecond optical vector fields. PMID:26658307

Zinc Vacancy Formation and its Effect on the Conductivity of ZnO

NASA Astrophysics Data System (ADS)

Khan, Enamul; Weber, Marc; Langford, Steve; Dickinson, Tom

2010-03-01

Exposing single crystal ZnO to 193-nm ArF excimer laser radiation can produce metallic zinc nanoparticles along the surface. The particle production mechanism appears to involve interstitial-vacancy pair formation in the near-surface bulk. Conductivity measurements made with one probe inside the laser spot and the other outside show evidence for rectifying behavior. Positron annihilation spectroscopy confirms the presence of Zn vacancies. We suggest that Zn vacancies are a possible source of p-type behavior in irradiated ZnO. Quadrupole mass spectroscopy shows that both oxygen and zinc are emitted during irradiation. Electron-hole pair production has previously been invoked to account for particle desorption from ZnO during UV illumination. Our results suggest that preexisting and laser-generated defects play a critical role in particle desorption and Zn vacancy formation.

Surface plasmon quantum cascade lasers as terahertz local oscillators.

PubMed

Hajenius, M; Khosropanah, P; Hovenier, J N; Gao, J R; Klapwijk, T M; Barbieri, S; Dhillon, S; Filloux, P; Sirtori, C; Ritchie, D A; Beere, H E

2008-02-15

We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto interference fringes, which are similar to those found in narrow double-metal waveguide QCLs. Compared to the latter, a more directional beam allows for better coupling of the radiation power to the mixer. We obtain a receiver noise temperature of 1050 K when the mixer is at 2 K, which, to our knowledge, is the highest sensitivity reported at frequencies beyond 2.5 THz.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Ming-Hung; School of Dentistry, College of Oral Medicine, Taipei Medical University, Taipei 110, Taiwan; Haung, Chiung-Fang

In this study, neodymium-doped yttrium orthovanadate (Nd:YVO{sub 4}) as a laser source with different scanning speeds was used on biomedical Ti surface. The microstructural and biological properties of laser-modified samples were investigated by means of optical microscope, electron microscope, X-ray diffraction, surface roughness instrument, contact angle and cell cytotoxicity assay. After laser modification, the rough volcano-like recast layer with micro-/nanoporous structure and wave-like recast layer with nanoporous structure were generated on the surfaces of laser-modified samples, respectively. It was also found out that, an α → (α + rutile-TiO{sub 2}) phase transition occurred on the recast layers of laser-modified samples.more » The Ti surface becomes hydrophilic at a high speed laser scanning. Moreover, the cell cytotoxicity assay demonstrated that laser-modified samples did not influence the cell adhesion and proliferation behaviors of osteoblast (MG-63) cell. The laser with 50 mm/s scanning speed induced formation of rough volcano-like recast layer accompanied with micro-/nanoporous structure, which can promote cell adhesion and proliferation of MG-63 cell on Ti surface. The results indicated that the laser treatment was a potential technology to enhance the biocompatibility for titanium. - Highlights: • Laser induced the formation of recast layer with micro-/nanoporous structure on Ti. • An α → (α + rutile-TiO{sub 2}) phase transition was observed within the recast layer. • The Ti surface becomes hydrophilic at a high speed laser scanning. • Laser-modified samples exhibit good biocompatibility to osteoblast (MG-63) cell.« less

Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum

PubMed Central

Seghilani, Mohamed S.; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

2016-01-01

The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here “orbital birefringence”, based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create “orbital gain dichroism” allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (<1°) diffraction limited beam, emitting 49 mW output power in the near-IR at λ ≃ 1 μm, a charge l = ±1, … ±4 (>50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications. PMID:27917885

Semiconductor lasers in rheumatological treatment

NASA Astrophysics Data System (ADS)

Pascu, Mihail-Lucian; Suteanu, S.; Ignat, P.; Pruna, Simion; Chitu, A.

1995-03-01

A computer controlled equipment, containing 6 lasers (HeNe and 5 diode lasers--DL) conceived to be used in rheumatological treatment is reported. DL emit at 895 nm and for typical applications, their expanded spots are superposed within the irradiation plane, on the HeNE defocused spot used to define the surface to be irradiated. DL emit 100 nsec pulses between 0.5 KHz and 1.5 KHz repetition rate and 0.5 mW average power (measured at 1 KHz). 150 patients with rheumathologic diseases were treated: lumbar spondylosis (75), gonarthrosis (30), cervical spondylosis (21), coxarthrosis (15), Heberden and Bouchard (9). The treatment consisted of: group I, 50 patients--laser therapy, 10 min/day, 10 days; group II, 50 patients--classical antirheumatic treatment; group III, 50 patients--mixed treatment. Assessment of sympathetic skin activity made using reactometry measurements, shows that latency time was longer before irradiation, 1867 +/- 289) msec then after, (1234 +/- 321) msec. Pain rating indexes decreasing for all three groups of patients were measured. Better results for more superficial diseases were obtained and best results were observed after irradiation with 1 KHz - 1.5 KHz repetition rate IR pulses. Better results were obtained when spot irradiation in a few points combined with zone irradiations was used.

Applications of Gunn lasers

NASA Astrophysics Data System (ADS)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x < 0.45) is used the active layer, making them candidates for light sources in plastic optical fibre (POF) based short-distance data communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Study on the Non-contact Acoustic Inspection Method for Concrete Structures by using Strong Ultrasonic Sound source

NASA Astrophysics Data System (ADS)

Sugimoto, Tsuneyoshi; Uechi, Itsuki; Sugimoto, Kazuko; Utagawa, Noriyuki; Katakura, Kageyoshi

Hammering test is widely used to inspect the defects in concrete structures. However, this method has a major difficulty in inspect at high-places, such as a tunnel ceiling or a bridge girder. Moreover, its detection accuracy is dependent on a tester's experience. Therefore, we study about the non-contact acoustic inspection method of the concrete structure using the air borne sound wave and a laser Doppler vibrometer. In this method, the concrete surface is excited by air-borne sound wave emitted with a long range acoustic device (LRAD), and the vibration velocity on the concrete surface is measured by a laser Doppler vibrometer. A defect part is detected by the same flexural resonance as the hammer method. It is already shown clearly that detection of a defect can be performed from a long distance of 5 m or more using a concrete test object. Moreover, it is shown that a real concrete structure can also be applied. However, when the conventional LRAD was used as a sound source, there were problems, such as restrictions of a measurement angle and the surrounding noise. In order to solve these problems, basic examination which used the strong ultrasonic wave sound source was carried out. In the experiment, the concrete test object which includes an imitation defect from 5-m distance was used. From the experimental result, when the ultrasonic sound source was used, restrictions of a measurement angle become less severe and it was shown that circumference noise also falls dramatically.

Surface Structuring with Polarization-Singular Femtosecond Laser Beams Generated by a q-plate

PubMed Central

Nivas, Jijil JJ; Cardano, Filippo; Song, Zhenming; Rubano, Andrea; Fittipaldi, Rosalba; Vecchione, Antonio; Paparo, Domenico; Marrucci, Lorenzo; Bruzzese, Riccardo; Amoruso, Salvatore

2017-01-01

In the last few years femtosecond optical vortex beams with different spatial distributions of the state of polarization (e.g. azimuthal, radial, spiral, etc.) have been used to generate complex, regular surface patterns on different materials. Here we present an experimental investigation on direct femtosecond laser surface structuring based on a larger class of vector beams generated by means of a q-plate with topological charge q = +1/2. In fact, voltage tuning of q-plate optical retardation allows generating a family of ultrashort laser beams with a continuous spatial evolution of polarization and fluence distribution in the focal plane. These beams can be thought of as a controlled coherent superposition of a Gaussian beam with uniform polarization and a vortex beam with a radial or azimuthal state of polarization. The use of this family of ultrashort laser beams in surface structuring leads to a further extension of the achievable surface patterns. The comparison of theoretical predictions of the vector beam characteristics at the focal plane and the generated surface patterns is used to rationalize the dependence of the surface structures on the local state of the laser beam, thus offering an effective way to either design unconventional surface structures or diagnose complex ultrashort laser beams. PMID:28169342

Surface Structuring with Polarization-Singular Femtosecond Laser Beams Generated by a q-plate.

PubMed

Nivas, Jijil Jj; Cardano, Filippo; Song, Zhenming; Rubano, Andrea; Fittipaldi, Rosalba; Vecchione, Antonio; Paparo, Domenico; Marrucci, Lorenzo; Bruzzese, Riccardo; Amoruso, Salvatore

2017-02-07

In the last few years femtosecond optical vortex beams with different spatial distributions of the state of polarization (e.g. azimuthal, radial, spiral, etc.) have been used to generate complex, regular surface patterns on different materials. Here we present an experimental investigation on direct femtosecond laser surface structuring based on a larger class of vector beams generated by means of a q-plate with topological charge q = +1/2. In fact, voltage tuning of q-plate optical retardation allows generating a family of ultrashort laser beams with a continuous spatial evolution of polarization and fluence distribution in the focal plane. These beams can be thought of as a controlled coherent superposition of a Gaussian beam with uniform polarization and a vortex beam with a radial or azimuthal state of polarization. The use of this family of ultrashort laser beams in surface structuring leads to a further extension of the achievable surface patterns. The comparison of theoretical predictions of the vector beam characteristics at the focal plane and the generated surface patterns is used to rationalize the dependence of the surface structures on the local state of the laser beam, thus offering an effective way to either design unconventional surface structures or diagnose complex ultrashort laser beams.

Surface Structuring with Polarization-Singular Femtosecond Laser Beams Generated by a q-plate

NASA Astrophysics Data System (ADS)

Nivas, Jijil Jj; Cardano, Filippo; Song, Zhenming; Rubano, Andrea; Fittipaldi, Rosalba; Vecchione, Antonio; Paparo, Domenico; Marrucci, Lorenzo; Bruzzese, Riccardo; Amoruso, Salvatore

2017-02-01

In the last few years femtosecond optical vortex beams with different spatial distributions of the state of polarization (e.g. azimuthal, radial, spiral, etc.) have been used to generate complex, regular surface patterns on different materials. Here we present an experimental investigation on direct femtosecond laser surface structuring based on a larger class of vector beams generated by means of a q-plate with topological charge q = +1/2. In fact, voltage tuning of q-plate optical retardation allows generating a family of ultrashort laser beams with a continuous spatial evolution of polarization and fluence distribution in the focal plane. These beams can be thought of as a controlled coherent superposition of a Gaussian beam with uniform polarization and a vortex beam with a radial or azimuthal state of polarization. The use of this family of ultrashort laser beams in surface structuring leads to a further extension of the achievable surface patterns. The comparison of theoretical predictions of the vector beam characteristics at the focal plane and the generated surface patterns is used to rationalize the dependence of the surface structures on the local state of the laser beam, thus offering an effective way to either design unconventional surface structures or diagnose complex ultrashort laser beams.

Low damage dry etch for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

2015-08-01

We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

NASA Astrophysics Data System (ADS)

Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

2017-10-01

We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

High resolution imaging studies into the formation of laser-induced periodic surface structures.

PubMed

Kerr, N C; Clark, S E; Emmony, D C

1989-09-01

We report the results of an investigation into the formation mechanism of laser-induced ripple structures based on obtaining direct images of a surface while the transient heating induced by a KrF excimer laser is still present. These images reveal transient but well-defined periodic heating patterns which, if enough subsequent excimer pulses are incident on the surface, become permanently induced ripple structures. It is evident from these transient images that the surface heating is confined to the induced structures, thus strongly supporting the idea that at low fluences the ripples are formed by localizing surface melting.

Electron acceleration and high harmonic generation by relativistic surface plasmons

NASA Astrophysics Data System (ADS)

Cantono, Giada; Luca Fedeli Team; Andrea Sgattoni Team; Andrea Macchi Team; Tiberio Ceccotti Team

2016-10-01

Intense, short laser pulses with ultra-high contrast allow resonant surface plasmons (SPs) excitation on solid wavelength-scale grating targets, opening the way to the extension of Plasmonics in the relativistic regime and the manipulation of intense electromagnetic fields to develop new short, energetic, laser-synchronized radiation sources. Recent theoretical and experimental studies have explored the role of SP excitation in increasing the laser-target coupling and enhancing ion acceleration, high-order harmonic generation and surface electron acceleration. Here we present our results on SP driven electron acceleration from grating targets at ultra-high laser intensities (I = 5 ×1019 W/cm2, τ = 25 fs). When the resonant condition for SP excitation is fulfilled, electrons are emitted in a narrow cone along the target surface, with a total charge of about 100 pC and energy spectra peaked around 5 MeV. Distinguishing features of the resonant process were investigated by varying the incidence angle, grating type and with the support of 3D PIC simulations, which closely reproduced the experimental data. Open challenges and further measurements on high-order harmonic generation in presence of a relativistic SP will also be discussed.

EFFECTS OF LASER RADIATION ON MATTER: Growth of periodic structures on the surface of germanium subjected to pulsed laser radiation

NASA Astrophysics Data System (ADS)

Barsukov, D. O.; Gusakov, G. M.; Frolov, A. I.

1991-12-01

An experimental investigation was made of the dynamics of growth of periodic surface structures due to the interaction with pulsed laser radiation. Samples of Ge were subjected to laser pulses (λ = 1.06 μm, τ = 70 ns) with energy densities in the range 0.5-5.5 J/cm2. An investigation was made of the dynamics of the first-order diffraction of probe (λ = 0.53 μm) laser pulses with a time resolution 4 ns when p- and s-polarized laser radiation was incident at angles close to normal. A strong nonlinearity of the growth of such periodic surface structures was observed. The energy density from which such growth began depended on the quality of the polished Ge surface. The parameters of the dynamics of the growth of these structures were estimated.

Tailored optical vector fields for ultrashort-pulse laser induced complex surface plasmon structuring.

PubMed

Ouyang, J; Perrie, W; Allegre, O J; Heil, T; Jin, Y; Fearon, E; Eckford, D; Edwardson, S P; Dearden, G

2015-05-18

Precise tailoring of optical vector beams is demonstrated, shaping their focal electric fields and used to create complex laser micro-patterning on a metal surface. A Spatial Light Modulator (SLM) and a micro-structured S-waveplate were integrated with a picosecond laser system and employed to structure the vector fields into radial and azimuthal polarizations with and without a vortex phase wavefront as well as superposition states. Imprinting Laser Induced Periodic Surface Structures (LIPSS) elucidates the detailed vector fields around the focal region. In addition to clear azimuthal and radial plasmon surface structures, unique, variable logarithmic spiral micro-structures with a pitch Λ ∼1μm, not observed previously, were imprinted on the surface, confirming unambiguously the complex 2D focal electric fields. We show clearly also how the Orbital Angular Momentum(OAM) associated with a helical wavefront induces rotation of vector fields along the optic axis of a focusing lens and confirmed by the observed surface micro-structures.

Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector

NASA Technical Reports Server (NTRS)

Nelson, Thomas R., Jr.; Loehr, John P.; Fork, Richard L.; Cole, Spencer; Jones, Darryl K.; Keys, Andrew

1999-01-01

There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.« less

Nanostructuring of sapphire using time-modulated nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Lorenz, P.; Zagoranskiy, I.; Ehrhardt, M.; Bayer, L.; Zimmer, K.

2017-02-01

The nanostructuring of dielectric surfaces using laser radiation is still a challenge. The IPSM-LIFE (laser-induced front side etching using in-situ pre-structured metal layer) method allows the easy, large area and fast laser nanostructuring of dielectrics. At IPSM-LIFE a metal covered dielectric is irradiated where the structuring is assisted by a self-organized molten metal layer deformation process. The IPSM-LIFE can be divided into two steps: STEP 1: The irradiation of thin metal layers on dielectric surfaces results in a melting and nanostructuring process of the metal layer and partially of the dielectric surface. STEP 2: A subsequent high laser fluence treatment of the metal nanostructures result in a structuring of the dielectric surface. At this study a sapphire substrate Al2O3(1-102) was covered with a 10 nm thin molybdenum layer and irradiated by an infrared laser with an adjustable time-dependent pulse form with a time resolution of 1 ns (wavelength λ = 1064 nm, pulse duration Δtp = 1 - 600 ns, Gaussian beam profile). The laser treatment allows the fabrication of different surface structures into the sapphire surface due to a pattern transfer process. The resultant structures were investigated by scanning electron microscopy (SEM). The process was simulated and the simulation results were compared with experimental results.

Effects of laser fluence on silicon modification by four-beam laser interference

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Le; Li, Dayou; JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU

2015-12-21

This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm{sup 2}, 495 mJ/cm{sup 2}, and 637 mJ/cm{sup 2}, the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, andmore » the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications.« less

Everlasting Dark Printing on Alumina by Laser

NASA Astrophysics Data System (ADS)

Penide, J.; Quintero, F.; Arias-González, F.; Fernández, A.; del Val, J.; Comesaña, R.; Riveiro, A.; Lusquiños, F.; Pou, J.

Marks or prints are needed in almost every material, mainly for decorative or identification purposes. Despite alumina is widely employed in many different industries, the need of printing directly on its surface is still a complex problem. In this sense, lasers have largely demonstrated their high capacities to mark almost every material including ceramics, but performing dark permanent marks on alumina is still an open challenge. In this work we present the results of a comprehensive experimental analysis on the process of marking alumina by laser. Four different laser sources were used in this study: a fiber laser (1075 nm) and three diode pumped Nd:YVO4 lasers emitting at near-infrared (1064 nm), visible (532 nm) and ultraviolet (355 nm) wavelengths, respectively. The results obtained with the four lasers were compared and physical processes involved were explained in detail. Colorimetric analyses allowed to identify the optimal parameters and conditions to produce everlasting and high contrast marks on alumina.

Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures

NASA Astrophysics Data System (ADS)

Tsvid, Gene

Semiconductor laser active regions are commonly characterized by photo- and electro-luminescence (PL, EL) and cavity length analysis. However quantitative spectral information is not readily extracted from PL and EL data and comparison of different active region materials can be difficult. More quantifiable spectral information is contained in the optical gain spectra. This work reports on spectral gain studies, using multi-segmented interband devices, of InGaAs quantum well and quantum dot active regions grown by metalorganic chemical vapor deposition (MOCVD). Using the fundamental connection between gain and spontaneous emission spectra, the spontaneous radiative current and spontaneous radiative efficiency is evaluated for these active regions. The spectral gain and spontaneous radiative efficiency measurements of 980 nm emitting InGaAs quantum well (QW) material provides a benchmark comparison to previous results obtained on highly-strained, 1200 nm emitting InGaAs QW material. These studies provide insight into carrier recombination and the role of the current injection efficiency in InGaAs QW lasers. The spectral gain of self-assembled MOCVD grown InGaAs quantum dots (QD) active regions are also investigated, allowing for comparison to InGaAs QW material. The second part of my talk will cover intersubband-transition QW and quantum-box (QB) lasers. Quantum cascade (QC) lasers have emerged as compact and technologically important light sources in the mid-infrared (IR) and far-IR wavelength ranges infringing on the near-IR and terahertz spectral regions respectively. However, the overall power conversion efficiency, so-called wallplug efficiency, of the best QC lasers, emitting around 5 microns, is ˜9% in CW operation and very unlikely to exceed 15%. In order to dramatically improve the wallplug efficiency of mid-IR lasers (i.e., to about 50%), intersubband QB (IQB) lasers have been proposed. The basic idea, the optimal design and the progress towards the fabrication of IQB lasers will be presented.

PHOTONICS AND NANOTECHNOLOGY Laser generation of nanostructures on the surface and in the bulk of solids

NASA Astrophysics Data System (ADS)

Bityurin, N. M.

2010-12-01

This paper considers nanostructuring of solid surfaces by nano-optical techniques, primarily by laser particle nanolithography. Threshold processes are examined that can be used for laser structuring of solid surfaces, with particular attention to laser swelling of materials. Fundamental spatial resolution issues in three-dimensional (3D) laser nanostructuring are analysed with application to laser nanopolymerisation and 3D optical information recording. The formation of nanostructures in the bulk of solids due to their structural instability under irradiation is exemplified by photoinduced formation of nanocomposites.

New developments in THz-time domain spectroscopy involving ML-VECSELs

NASA Astrophysics Data System (ADS)

Apostolopoulos, Vasilis; Tropper, Anne C.; Keenlyside, Benjamin; Chen-Sverre, Theo; Woods, Jonathan R. C.

2018-02-01

The THz time domain spectrometer (THz-TDS) has revolutionized the adoption of THz science in fields such as medicine, material characterization, pharmaceutical research and biology among others. Traditionally a THz-TDS was based on a titanium sapphire laser, while most of the commercially sold spectrometers today adopt fiber lasers. Vertical External Cavity Surface emitting lasers or VECSELs have potential to be the future laser of choice for the implementation of THz spectrometers, as they are small, low-cost, low noise and high repetition rate. Here I will outline the progress in our laboratory and the general community concerning VECSEL-THz technology and I will account the problems that have to be solved for the VECSEL-THz technology to succeed.

High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

NASA Astrophysics Data System (ADS)

Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

2013-03-01

High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

Optical waveguiding properties of colloidal quantum dots doped polymer microfibers.

PubMed

Yu, Jiahao; Wang, Xiongbin; Chen, Rui

2018-05-14

QDs-doped polymer microfibers are fabricated through direct drawing method. By adding the polymethylmethacrylate into polystyrene, the surface quality and flexibility of microfiber are improved. Under direct excitation by the focused laser, the polymer microfibers doped with different quantum dots emit different colors and act as an optical waveguide. The waveguide properties of the microfiber are studied in detail. It is found that refractive index of the substrate and diameter of microfiber are the most important factors that affect the optical loss of this waveguide. The microfiber does not produce significant polarization after being deposited on the substrate. Moreover, exciting the QDs-doped polymer microfiber through a blue LED is demonstrated. This structure may find widespread applications in integrated photonic devices.

Pump-probe imaging of laser-induced periodic surface structures after ultrafast irradiation of Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, Ryan D.; Torralva, Ben; Adams, David P.

2013-09-30

Ultrafast pump-probe microscopy has been used to investigate laser-induced periodic surface structure (LIPSS) formation on polished Si surfaces. A crater forms on the surface after irradiation by a 150 fs laser pulse, and a second, subsequent pulse forms LIPSS within the crater. Sequentially delayed images show that LIPSS with a periodicity slightly less than the fundamental laser wavelength of 780 nm appear on Si surfaces ∼50 ps after arrival of the second pump laser pulse, well after the onset of melting. LIPSS are observed on the same timescale as material removal, suggesting that their formation involves material ejection.

Comprehensive studies of ultrashort laser pulse ablation of tin target at terawatt power

NASA Astrophysics Data System (ADS)

Elsied, Ahmed M.; Diwakar, Prasoon K.; Hassanein, Ahmed

2018-01-01

The fundamental properties of ultrashort laser interactions with metals using up to terawatt power were comprehensively studied, i.e., specifically mass ablation, nanoparticle formation, and ion dynamics using multitude of diagnostic techniques. Results of this study can be useful in many fields of research including spectroscopy, micromachining, thin film fabrication, particle acceleration, physics of warm dense matter, and equation-of-state determination. A Ti:Sapphire femtosecond laser system (110 mJ maximum energy, 40 fs, 800 nm, P-polarized, single pulse mode) was used, which delivered up to 3 terawatt laser power to ablate 1 mm tin film in vacuum. The experimental analysis includes the effect of the incident laser fluence on the ablated mass, size of the ablated area, and depth of ablation using white light profilometer. Atomic force microscope was used to measure the emitted particles size distribution at different laser fluence. Faraday cup (FC) detector was used to analyze the emitted ions flux by measuring the velocity, and the total charge of the emitted ions. The study shows that the size of emitted particles follows log-normal distribution with peak shifts depending on incident laser fluence. The size of the ablated particles ranges from 20 to 80 nm. The nanoparticles deposited on the wafer tend to aggregate and to be denser as the incident laser fluence increases as shown by AFM images. Laser ablation depth was found to increase logarithmically with laser fluence then leveling off at laser fluence > 400 J/cm2. The total ablated mass tends to increase logarithmically with laser fluence up to 60 J/cm2 while, increases gradually at higher fluence due to the increase in the ablated area. The measured ion emitted flux shows a linear dependence on laser fluence with two distinct regimes. Strong dependence on laser fluence was observed at fluences < 350 J/cm2. Also, a slight enhancement in ion velocity was observed with increasing laser fluence up to 350 J/cm2.

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

We report on low threshold current density (<400 A cm-2) injection lasing in (Al x Ga1-x )0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15° for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm-2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ˜2 kA cm-2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211)A-grown structures.

Exponentially decaying interaction potential of cavity solitons

NASA Astrophysics Data System (ADS)

Anbardan, Shayesteh Rahmani; Rimoldi, Cristina; Kheradmand, Reza; Tissoni, Giovanna; Prati, Franco

2018-03-01

We analyze the interaction of two cavity solitons in an optically injected vertical cavity surface emitting laser above threshold. We show that they experience an attractive force even when their distance is much larger than their diameter, and eventually they merge. Since the merging time depends exponentially on the initial distance, we suggest that the attraction could be associated with an exponentially decaying interaction potential, similarly to what is found for hydrophobic materials. We also show that the merging time is simply related to the characteristic times of the laser, photon lifetime, and carrier lifetime.

Mechanisms of high-regularity periodic structuring of silicon surface by sub-MHz repetition rate ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Gnilitskyi, Iaroslav; Gruzdev, Vitaly; Bulgakova, Nadezhda M.; Mocek, Tomáš; Orazi, Leonardo

2016-10-01

Silicon is one of the most abundant materials which is used in many areas of modern research and technology. A variety of those applications require surface nanopatterning with minimum structure defects. However, the high-quality nanostructuring of large areas of silicon surface at industrially acceptable speed is still a challenge. Here, we report a rapid formation of highly regular laser-induced periodic surface structures (HR-LIPSS) in the regime of strong ablation by infrared femtosecond laser pulses at sub-MHz repetition rate. Parameters of the laser-surface interactions and obtained experimental results suggest an important role of electrostatically assisted bond softening in initiating the HR-LIPSS formation.

Beam Steering Analysis in Optically Phased Vertical Cavity Surface Emitting Laser Array

NASA Astrophysics Data System (ADS)

Xun, Meng; Sun, Yun; Xu, Chen; Xie, Yi-Yang; Jin, Zhi; Zhou, Jing-Tao; Liu, Xin-Yu; Wu, De-Xin

2018-03-01

Not Available Supported by the ‘Supporting First Action’ Joint Foundation for Outstanding Postdoctoral Program under Grant Nos Y7YBSH0001 and Y7BSH14001, the National Natural Science Foundation of China under Grant No 61434006, and the National Key Basic Research Program of China under Grant No 2017YFB0102302.

Ultrafast Directional Beam Switching in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast directional beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 microns in diameter placed about 1 micron apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degrees.

High Bandwidth-Efficiency Resonant Cavity Enhanced Schottky Photodiodes for 800-850 nm Wavelength Operation

DTIC Science & Technology

1998-05-25

at least 50 nm wide centered around 830 nm wavelength. The layers are grown by molecular beam epitaxy on a semi- insulating GaAs substrate. The...limited by the material properties. With the advent of GaAs vertical-cavity surface-emitting lasers ~ VCSEL !,2 the 800–850 nm wavelength range has recently

Evaluating De-centralised and Distributional Options for the Distributed Electronic Warfare Situation Awareness and Response Test Bed

DTIC Science & Technology

2013-12-01

effectors (deployed on ground based or aerial platforms) to detect , identify, locate, track or suppress stationary or slow moving surface based RF...ground based or aerial platforms) to detect , identify, locate, track or suppress stationary or slow moving surface based RF emitting targets. In the...Electronic Support EO Electro-Optic FPGAs Field Programmable Gate Arrays IR Infra-red LADAR Laser Detection and Ranging OSX Mac OS X; the apple

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the Semiconductor Device Group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. these efforts, in addition to yielding diodes which ns switching speeds, led to the development in early 1962 of diodes that emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Surface transmission enhancement of ZnS via continuous-wave laser microstructuring

NASA Astrophysics Data System (ADS)

Major, Kevin J.; Florea, Catalin M.; Poutous, Menelaos K.; Busse, Lynda E.; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.

2014-03-01

Fresnel reflectivity at dielectric boundaries between optical components, lenses, and windows is a major issue for the optics community. The most common method to reduce the index mismatch and subsequent surface reflection is to apply a thin film or films of intermediate indices to the optical materials. More recently, surface texturing or roughening has been shown to approximate a stepwise refractive index thin-film structure, with a gradient index of refraction transition from the bulk material to the surrounding medium. Short-pulse laser ablation is a recently-utilized method to produce such random anti-reflective structured surfaces (rARSS). Typically, high-energy femtosecond pulsed lasers are focused on the surface of the desired optical material to produce periodic or quasi-periodic assemblies of nanostructures which provide reduced surface reflection. This technique is being explored to generate a variety of structures across multiple optical materials. However, femtosecond laser systems are relatively expensive and more difficult to maintain. We present here a low power and low-cost alternative to femtosecond laser ablation, demonstrating random antireflective structures on the surface of Cleartran ZnS windows produced with a continuous-wave laser. In particular, we find that irradiation with a low-powered (<10 mW), defocused, CW 325nm-wavelength laser produces a random surface with significant roughness on ZnS substrates. The transmission through the structured ZnS windows is shown to increase by up to 9% across a broad wavelength range from the visible to the near-infrared.

Femtosecond laser-induced periodic surface structures on steel and titanium alloy for tribological applications

NASA Astrophysics Data System (ADS)

Bonse, J.; Koter, R.; Hartelt, M.; Spaltmann, D.; Pentzien, S.; Höhm, S.; Rosenfeld, A.; Krüger, J.

2014-10-01

Laser-induced periodic surface structures (LIPSS, ripples) were generated on stainless steel (100Cr6) and titanium alloy (Ti6Al4V) surfaces upon irradiation with multiple femtosecond laser pulses (pulse duration 30 fs, central wavelength 790 nm). The experimental conditions (laser fluence, spatial spot overlap) were optimized in a sample-scanning geometry for the processing of large surface areas (5 × 5 mm2) covered homogeneously by the nanostructures. The irradiated surface regions were subjected to white light interference microscopy and scanning electron microscopy revealing spatial periods around 600 nm. The tribological performance of the nanostructured surface was characterized by reciprocal sliding against a ball of hardened steel in paraffin oil and in commercial engine oil as lubricants, followed by subsequent inspection of the wear tracks. For specific conditions, on the titanium alloy a significant reduction of the friction coefficient by a factor of more than two was observed on the laser-irradiated (LIPSS-covered) surface when compared to the non-irradiated one, indicating the potential benefit of laser surface structuring for tribological applications.

Ordered materials for organic electronics and photonics.

PubMed

O'Neill, Mary; Kelly, Stephen M

2011-02-01

We present a critical review of semiconducting/light emitting, liquid crystalline materials and their use in electronic and photonic devices such as transistors, photovoltaics, OLEDs and lasers. We report that annealing from the mesophase improves the order and packing of organic semiconductors to produce state-of-the-art transistors. We discuss theoretical models which predict how charge transport and light emission is affected by the liquid crystalline phase. Organic photovoltaics and OLEDs require optimization of both charge transport and optical properties and we identify the various trade-offs involved for ordered materials. We report the crosslinking of reactive mesogens to give pixellated full-colour OLEDs and distributed bi-layer photovoltaics. We show how the molecular organization inherent to the mesophase can control the polarization of light-emitting devices and the gain in organic, thin-film lasers and can also provide distributed feedback in chiral nematic mirrorless lasers. We update progress on the surface alignment of liquid crystalline semiconductors to obtain monodomain devices without defects or devices with spatially varying properties. Finally the significance of all of these developments is assessed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser-based nanoengineering of surface topographies for biomedical applications

NASA Astrophysics Data System (ADS)

Schlie, Sabrina; Fadeeva, Elena; Koroleva, Anastasia; Ovsianikov, Aleksandr; Koch, Jürgen; Ngezahayo, Anaclet; Chichkov, Boris. N.

2011-04-01

In this study femtosecond laser systems were used for nanoengineering of special surface topographies in silicon and titanium. Besides the control of feature sizes, we demonstrated that laser structuring caused changes in material wettability due to a reduced surface contact area. These laser-engineered topographies were tested for their capability to control cellular behavior of human fibroblasts, SH-SY5Y neuroblastoma cells, and MG-63 osteoblasts. We found that fibroblasts reduced cell growth on the structures, while the other cell types proliferated at the same rate. These findings make laser-surface structuring very attractive for biomedical applications. Finally, to explain the results the correlation between topography and the biophysics of cellular adhesion, which is the key step of selective cell control, is discussed.

Tribological performance of femtosecond laser-induced periodic surface structures on titanium and a high toughness bearing steel

NASA Astrophysics Data System (ADS)

Bonse, J.; Koter, R.; Hartelt, M.; Spaltmann, D.; Pentzien, S.; Höhm, S.; Rosenfeld, A.; Krüger, J.

2015-05-01

Laser-induced periodic surface structures (LIPSS, ripples) were processed on steel (X30CrMoN15-1) and titanium (Ti) surfaces by irradiation in air with linear polarized femtosecond laser pulses with a pulse duration of 30 fs at 790 nm wavelength. For the processing of large LIPSS covered surface areas (5 mm × 5 mm), the laser fluence and the spatial spot overlap were optimized in a sample-scanning geometry. The laser-processed surfaces were characterized by optical microscopy (OM), white light interference microscopy (WLIM) and scanning electron microscopy (SEM). Spatial LIPSS periods between 450 and 600 nm were determined. The nanostructured surface regions were tribologically tested under reciprocal sliding conditions against a 10-mm diameter ball of hardened 100Cr6 steel. Paraffin oil and engine oil were used as lubricants for 1000 sliding cycles at 1 Hz with a normal load of 1.0 N. The corresponding wear tracks were analyzed by OM and SEM. In particular cases, the laser-generated nanostructures endured the tribological treatment. Simultaneously, a significant reduction of the friction coefficient and the wear was observed in the laser-irradiated (LIPSS-covered) areas when compared to the non-irradiated surface. The experiments reveal the potential benefit of laser surface structuring for tribological applications.

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes

PubMed Central

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-01-01

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561

Laser cleaning on Roman coins

NASA Astrophysics Data System (ADS)

Drakaki, E.; Karydas, A. G.; Klinkenberg, B.; Kokkoris, M.; Serafetinides, A. A.; Stavrou, E.; Vlastou, R.; Zarkadas, C.

Ancient metal objects react with moisture and environmental chemicals to form various corrosion products. Because of the unique character and high value of such objects, any cleaning procedure should guarantee minimum destructiveness. The most common treatment used is mechanical stripping, in which it is difficult to avoid surface damage when employed. Lasers are currently being tested for a wide range of conservation applications. Since they are highly controllable and can be selectively applied, lasers can be used to achieve more effective and safer cleaning of archaeological artifacts and protect their surface details. The basic criterion that motivated us to use lasers to clean Roman coins was the requirement of pulsed emission, in order to minimize heat-induced damages. In fact, the laser interaction with the coins has to be short enough, to produce a fast removal of the encrustation, avoiding heat conduction into the substrate. The cleaning effects of three lasers operating at different wavelengths, namely a TEA CO2 laser emitting at 10.6 μm, an Er:YAG laser at 2.94 μm, and a 2ω-Nd:YAG laser at 532 nm have been compared on corroded Romans coins and various atomic and nuclear techniques have also been applied to evaluate the efficiency of the applied procedure.

Hot-electron surface retention in intense short-pulse laser-matter interactions.

PubMed

Mason, R J; Dodd, E S; Albright, B J

2005-07-01

Implicit hybrid plasma simulations predict that a significant fraction of the energy deposited into hot electrons can be retained near the surface of targets with steep density gradients illuminated by intense short-pulse lasers. This retention derives from the lateral transport of heated electrons randomly emitted in the presence of spontaneous magnetic fields arising near the laser spot, from geometric effects associated with a small hot-electron source, and from E fields arising in reaction to the ponderomotive force. Below the laser spot hot electrons are axially focused into a target by the B fields, and can filament in moderate Z targets by resistive Weibel-like instability, if the effective background electron temperature remains sufficiently low. Carefully engineered use of such retention in conjunction with ponderomotive density profile steepening could result in a reduced hot-electron range that aids fast ignition. Alternatively, such retention may disturb a deeper deposition needed for efficient radiography and backside fast ion generation.

Investigation of room temperature UV emission of ZnO films with different defect densities induced by laser irradiation.

PubMed

Zhao, Yan; Jiang, Yijian

2010-08-01

We studied the room temperature UV emission of ZnO films with different defect densities which is fabricated by KrF laser irradiation process. It is shown room temperature UV photoluminescence of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO) (1LO, 2LO). With increase of the defect density, the FX emission decreased and FX-LO emission increased dramatically; and the relative strengths of FX to FX-LO emission intensities determine the peak position and intensity of UV emission. What is more, laser irradiation with moderate energy density could induce the crystalline ZnO film with very flat and smooth surface. This investigation indicates that KrF laser irradiation could effectively modulate the exciton emission and surface morphology, which is important for the application of high performance of UV emitting optoelectronic devices. Copyright 2010 Elsevier B.V. All rights reserved.

Fluorescent image tracking velocimeter

DOEpatents

Shaffer, Franklin D.

1994-01-01

A multiple-exposure fluorescent image tracking velocimeter (FITV) detects and measures the motion (trajectory, direction and velocity) of small particles close to light scattering surfaces. The small particles may follow the motion of a carrier medium such as a liquid, gas or multi-phase mixture, allowing the motion of the carrier medium to be observed, measured and recorded. The main components of the FITV include: (1) fluorescent particles; (2) a pulsed fluorescent excitation laser source; (3) an imaging camera; and (4) an image analyzer. FITV uses fluorescing particles excited by visible laser light to enhance particle image detectability near light scattering surfaces. The excitation laser light is filtered out before reaching the imaging camera allowing the fluoresced wavelengths emitted by the particles to be detected and recorded by the camera. FITV employs multiple exposures of a single camera image by pulsing the excitation laser light for producing a series of images of each particle along its trajectory. The time-lapsed image may be used to determine trajectory and velocity and the exposures may be coded to derive directional information.

Simulation of a polarized laser beam reflected at the sea surface: modeling and validation

NASA Astrophysics Data System (ADS)

Schwenger, Frédéric

2015-05-01

A 3-D simulation of the polarization-dependent reflection of a Gaussian shaped laser beam on the dynamic sea surface is presented. The simulation considers polarized or unpolarized laser sources and calculates the polarization states upon reflection at the sea surface. It is suitable for the radiance calculation of the scene in different spectral wavebands (e.g. near-infrared, SWIR, etc.) not including the camera degradations. The simulation also considers a bistatic configuration of laser source and receiver as well as different atmospheric conditions. In the SWIR, the detected total power of reflected laser light is compared with data collected in a field trial. Our computer simulation combines the 3-D simulation of a maritime scene (open sea/clear sky) with the simulation of polarized or unpolarized laser light reflected at the sea surface. The basic sea surface geometry is modeled by a composition of smooth wind driven gravity waves. To predict the input of a camera equipped with a linear polarizer, the polarized sea surface radiance must be calculated for the specific waveband. The s- and p-polarization states are calculated for the emitted sea surface radiance and the specularly reflected sky radiance to determine the total polarized sea surface radiance of each component. The states of polarization and the radiance of laser light specularly reflected at the wind-roughened sea surface are calculated by considering the s- and p- components of the electric field of laser light with respect to the specular plane of incidence. This is done by using the formalism of their coherence matrices according to E. Wolf [1]. Additionally, an analytical statistical sea surface BRDF (bidirectional reflectance distribution function) is considered for the reflection of laser light radiances. Validation of the simulation results is required to ensure model credibility and applicability to maritime laser applications. For validation purposes, field measurement data (images and meteorological data) was analyzed. An infrared laser, with or without a mounted polarizer, produced laser beam reflection at the water surface and images were recorded by a camera equipped with a polarizer with horizontal or vertical alignment. The validation is done by numerical comparison of measured total laser power extracted from recorded images with the corresponding simulation results. The results of the comparison are presented for different incident (zenith/azimuth) angles of the laser beam and different alignment for the laser polarizers (vertical/horizontal/without) and the camera (vertical/horizontal).

Measurement of deformations of models in a wind tunnel

NASA Astrophysics Data System (ADS)

Charpin, F.; Armand, C.; Selvaggini, R.

Techniques used at the ONERA Modane Center to monitor geometric variations in scale-models in wind tunnel trials are described. The methods include: photography of reflections from mirrors embedded in the model surface; laser-based torsiometry with polarized mirrors embedded in the model surface; predictions of the deformations using numerical codes for the model surface mechanical characteristics and the measured surface stresses; and, use of an optical detector to monitor the position of luminous fiber optic sources emitting from the model surfaces. The data enhance the confidence that the wind tunnel aerodynamic data will correspond with the in-flight performance of full scale flight surfaces.

Imaging laser radar for high-speed monitoring of the environment

NASA Astrophysics Data System (ADS)

Froehlich, Christoph; Mettenleiter, M.; Haertl, F.

1998-01-01

In order to establish mobile robot operations and to realize survey and inspection tasks, robust and precise measurements of the geometry of the 3D environment is the basis sensor technology. For visual inspection, surface classification, and documentation purposes, however, additional information concerning reflectance of measured objects is necessary. High-speed acquisition of both geometric and visual information is achieved by means of an active laser radar, supporting consistent range and reflectance images. The laser radar developed at Zoller + Froehlich (ZF) is an optical-wavelength system measuring the range between sensor and target surface as well as the reflectance of the target surface, which corresponds to the magnitude of the back scattered laser energy. In contrast to other range sensing devices, the ZF system is designed for high-speed and high- performance operation in real indoor and outdoor environments, emitting a minimum of near-IR laser energy. It integrates a single-point laser measurement system and a mechanical deflection system for 3D environmental measurements. This paper reports details of the laser radar which is designed to cover requirements with medium range applications. It outlines the performance requirements and introduces the two-frequency phase-shift measurement principle. The hardware design of the single-point laser measurement system, including the main modulates, such as the laser head, the high frequency unit and the signal processing unit are discussed in detail. The paper focuses on performance data of the laser radar, including noise, drift over time, precision, and accuracy with measurements. It discusses the influences of ambient light, surface material of the target, and ambient temperature for range accuracy and range precision. Furthermore, experimental results from inspection of tunnels, buildings, monuments and industrial environments are presented. The paper concludes by summarizing results and gives a short outlook to future work.

The formation mechanism and evolution of ps-laser-induced high-spatial-frequency periodic surface structures on titanium

NASA Astrophysics Data System (ADS)

Pan, A. F.; Wang, W. J.; Mei, X. S.; Yang, H. Z.; Sun, X. F.

2017-01-01

We report the formation and evolution mechanisms of HSFLs (high-spatial-frequency laser-induced periodic surface structures) on the commercial pure titanium under 10-ps 532-nm-wavelength laser irradiation. At a lower peak laser fluence, HSFLs in the rough zone are first formed along the surface texture. Subsequently, HSFLs in the flat zone are formed with an orientation parallel to the laser polarization direction. The formation of HSFLs can be attributed to the parallel orientation of the initial periodic modulation of the electron plasma concentration to the laser polarization direction. In particular, the formation of HSFLs along the surface texture occurs because the absorbed laser energy density is along the surface texture. At a higher peak laser fluence, two types of HSFLs appear together with LSFLs. The first type involves HSFLs that initially cover the concave part of the LSFL (low-spatial-frequency laser-induced periodic surface structures) and penetrate inward as the number of spot overlaps increases. This formation mechanism can be attributed to cavitation instability. The second type involves HSFLs that are initially in the convex part of the LSFL, and they are transformed into oxidized nanodots as the number of spot overlaps increases. The oxidized nanodots increase the absorption of laser energy in titanium, which leads to the ablation and removal of the oxidized material. Therefore, the surface of the LSFL becomes smooth.

Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Geels, Randall Scott

The theory, design, fabrication, and testing of vertical-cavity surface-emitting lasers (VCSELs) is explored in depth. The design of the distributed Bragg reflector (DBR) mirrors is thoroughly treated and both analytic and numerical approaches for computing the reflectivity are covered. The electrical properties of the DBR mirrors are also considered and graded interfaces are found to be critical in reducing the series voltage drop in the mirrors. Thickness variations due to growth rate uncertainties are considered and the permissible thickness inaccuracies are discussed. Layer thickness variations of several percent can be tolerated without large changes in the threshold current. The growth of VCSELs by molecular beam epitaxy (MBE) is described in detail as is the device processing technology for broad area as well as small area devices. Results from numerous devices are reported. Broad area in-plane lasers were used to characterize the material and determine the internal parameters. Broad area VCSELs were fabricated to determine the characteristics of the VCSEL cavity. Small area VCSELs were fabricated and extensively tested. Measured and derived parameters from small area devices include: threshold current (~0.7 mA), peak output power (>3 mW), maximum operation temperature (>110^ circC), output power at 100^ circC (~0.4 mW), and linewidth (85 MHz). The near field, far field, and polarization characteristics were also measured.

Efficient blue emission of ytterbium-doped Sr5(PO4)3F under quasi-three-level intracavity pumping

NASA Astrophysics Data System (ADS)

Yang, Y.; Cao, G. H.

2012-02-01

We report an Yb:Sr5(PO4)3F (Yb:S-FAP) laser emitting at 985 nm intracavity pumped by a 912 nm diode-pumped Nd:GdVO4 laser. A 808 nm diode laser is used to pump the Nd:GdVO4 crystal emitting at 912 nm, and the Yb:S-FAP laser emitting at 985 nm intracavity pumped at 912 nm. With incident pump power of 17.5 W, intracavity second harmonic generation has been demonstrated with a power of 131 mW at 492.5 nm by using a LBO nonlinear crystal.

Enhanced optical absorbance and fabrication of periodic arrays on nickel surface using nanosecond laser

NASA Astrophysics Data System (ADS)

Fu, Jinxiang; Liang, Hao; Zhang, Jingyuan; Wang, Yibo; Liu, Yannan; Zhang, Zhiyan; Lin, Xuechun

2017-04-01

A hundred-nanosecond pulsed laser was employed to structure the nickel surface. The effects of laser spatial filling interval and laser scanning speed on the optical absorbance capacity and morphologies on the nickel surface were experimentally investigated. The black nickel surface covered with dense micro/nanostructured broccoli-like clusters with strong light trapping capacity ranging from the UV to the near IR was produced at a high laser scanning speed up to v=100 mm/s. The absorbance of the black nickel is as high as 98% in the UV range of 200-400 nm, more than 97% in the visible spectrum, ranging from 400 to 800 nm, and over 90% in the IR between 800 and 2000 nm. In addition, when the nickel surface was irradiated in two-dimensional crossing scans by laser with different processing parameters, self-organized and shape-controllable structures of three-dimensional (3D) periodic arrays can be fabricated. Compared with ultrafast laser systems previously used for such processing, the nanosecond fiber laser used in this work is more cost-effective, compact and allows higher processing rates. This nickel surface structured technique may be applicable in optoelectronics, batteries industry, solar/wave absorbers, and wettability materials.

Physical basics of endovenous laser treatment and potential of innovative developments

NASA Astrophysics Data System (ADS)

Sroka, R.; Esipova, A.; Schmedt, C. G.

2017-04-01

During the last decade, endoluminal laser treatment (ELT) has been rapidly developing. Protocols using radially emitting ELT fibres in combination with infrared laser light show clinical advantages over the bare-fibre technique and near infrared irradiation. Although the clinical response rate is high several side effects occurred. Innovative light application systems and feedback systems are therefore being under development to potentially improve the clinical situation. The irradiation patterns of bare fibres and radially emitting 1-ring and 2-ring fibres were measured using the goniometer technique. The device robustness, device handling and tissue effects were investigated using the established ox-foot-model. Furthermore, temperature measurements were performed either intraluminal within the irradiation field using a tiny temperature sensor and on the outer surface of the vessel wall by means of a thermocamera. All fibres showed sufficient mechanical and thermal robustness. The destruction threshold is far beyond the light powers employed during clinical application. The 1-ring fibre showed very high peak temperatures for a short time, while the 2-ring-fibre hold its somewhat lower maximum temperature for a longer time. Both forms of energy application resulted in the desired shrinkage and destruction effect. In this regard, the handling of the 2-ring fibre appears subjectively more convenient with reduced sticking-related problems. Acute tissue effects could be investigated to improve the understanding especially of the interaction between handling, maneuvers and tissue effects. The 2-ring radially emitting fibre in combination with IR laser light and specific application parameters showed improved handling and safety features.

Subsurface plasma in beam of continuous CO2-laser

NASA Astrophysics Data System (ADS)

Danytsikov, Y. V.; Dymshakov, V. A.; Lebedev, F. V.; Pismennyy, V. D.; Ryazanov, A. V.

1986-03-01

Experiments performed at the Institute of Atomic Energy established the conditions for formation of subsurface plasma in substances by laser radiation and its characteristics. A quasi-continuous CO2 laser emitting square pulses of 0.1 to 1.0 ms duration and 1 to 10 kW power as well as a continuous CO2 laser served as radiation sources. Radiation was focused on spots 0.1 to 0.5 mm in diameter and maintained at levels ensuring constant power density during the interaction time, while the temperature of the target surface was measured continuously. Metals, graphite and dielectric materials were tested with laser action taking place in air N2 + O2 mixtures, Ar or He atmosphere under pressures of 0.01 to 1.0 atm. Data on radiation intensity thresholds for evaporation and plasma formation were obtained. On the basis of these thresholds, combined with data on energy balance and the temperature profile in plasma layers, a universal state diagram was constructed for subsurface plasma with nonquantified surface temperature and radiation intensity coordinates.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, C.; Margalith, T.; Ng, T. K.; DenBaars, S. P.; Ooi, B. S.; Speck, J. S.; Nakamura, S.

2016-02-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 μm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 μW with a threshold current density of ~3.5 kA/cm2, while the ITO VCSELs show peak powers of ~80 μW and threshold current densities of ~7 kA/cm2.

Novel hybrid laser modes in composite VCSEL-DFB microcavities (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mischok, Andreas; Wagner, Tim; Sudzius, Markas; Brückner, Robert; Fröb, Hartmut; Lyssenko, Vadim G.; Leo, Karl

2017-02-01

Two of the most successful microcresonator concepts are the vertical cavity surface emitting laser (VCSEL), where light is confined between distributed Bragg reflectors (DBRs), and the distributed feedback (DFB) laser, where a periodic grating provides positive optical feedback to selected modes in an active waveguide (WG) layer. Our work concerns the combination of both into a composite device, facilitating coherent interaction between both regimes and giving rise to novel laser modes in the system. In a first realization, a full VCSEL stack with an organic active layer is evaporated on top of a diffraction grating with a large period (approximately 1 micron), leading to diffraction of waveguided modes into the surface emission of the device. Here, the coherent interaction between VCSEL and WG modes, as observed in an anticrossing of the dispersion lines, facilitates novel hybrid lasing modes with macroscopic in-plane coherence [1]. In further studies, we decrease the grating period of such devices to realise DFB conditions in a second-order Bragg grating which strongly couples photons via first-order light diffraction to the VCSEL. This efficient coupling can be compared to more classical cascade-coupled cavities and is successfully described by a coupled oscillator model [2]. When both resonators are non-degenerate, they are able to function as independent structures without substantial diffraction losses. The realization of such novel devices provides a promising platform for photonic circuits based on organic microlasers. [1] A. Mischok et al., Adv. Opt. Mater., early online, DOI: 10.1002/adom.201600282, (2016) [2] T. Wagner et al., Appl. Phys. Lett., accepted, in production, (2016)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao; Curwen, Christopher; Chen, Daguan

A longstanding challenge for terahertz quantum-cascade (QC) lasers is achieving both a high power and high-quality beam pattern, this is due in part due to their use of sub-wavelength metallic waveguides. Recently, the vertical-external-cavity surface-emitting laser (VECSEL) concept was demonstrated for the first time in the terahertz range and for a QC-laser. This is enabled by the development of an amplifying metasurface reflector capable of coupling incident free-space THz radiation to the QC-laser material such that it is amplified and re-radiated. The THz metasurface QC-VECSEL initiates a new approach for making QC-lasers with high power and excellent beam pattern. Furthermore,more » the ability to engineer the electromagnetic phase, amplitude, and polarization response of the metasurface enables lasers with new functionality. Our article provides an overview of the fundamental theory, design considerations, and recent results for high-performance THz QC-VECSELs.« less

Terahertz metasurface quantum-cascade VECSELs: theory and performance

DOE PAGES

Xu, Luyao; Curwen, Christopher; Chen, Daguan; ...

2017-04-12

A longstanding challenge for terahertz quantum-cascade (QC) lasers is achieving both a high power and high-quality beam pattern, this is due in part due to their use of sub-wavelength metallic waveguides. Recently, the vertical-external-cavity surface-emitting laser (VECSEL) concept was demonstrated for the first time in the terahertz range and for a QC-laser. This is enabled by the development of an amplifying metasurface reflector capable of coupling incident free-space THz radiation to the QC-laser material such that it is amplified and re-radiated. The THz metasurface QC-VECSEL initiates a new approach for making QC-lasers with high power and excellent beam pattern. Furthermore,more » the ability to engineer the electromagnetic phase, amplitude, and polarization response of the metasurface enables lasers with new functionality. Our article provides an overview of the fundamental theory, design considerations, and recent results for high-performance THz QC-VECSELs.« less

LED pumped Nd:YAG laser development program

NASA Technical Reports Server (NTRS)

Farmer, G. I.; Kiang, Y. C.; Lynch, R. J.

1973-01-01

The results of a development program for light emitting diode (LED) pumped Nd:YAG lasers are described. An index matching method to increase the coupling efficiency of the laser is described. A solid glass half-cylinder of 5.0 by 5.6 centimeters was used for index matching and also as a pumping cavity reflector. The laser rods were 1.5 by 56 millimeters with dielectric coatings on both end surfaces. The interfaces between the diode array, glass cylinder, and laser rod were filled with viscous fluid of refractive index n = 1.55. Experiments performed with both the glass cylinder and a gold coated stainless steel reflector of the same dimensions under the same operating conditions indicate that the index matching cylinder gave 159 to 200 percent improvement of coupling efficiency over the metal reflector at various operating temperatures.

XRF-analysis of fine and ultrafine particles emitted from laser printing devices.

PubMed

Barthel, Mathias; Pedan, Vasilisa; Hahn, Oliver; Rothhardt, Monika; Bresch, Harald; Jann, Oliver; Seeger, Stefan

2011-09-15

In this work, the elemental composition of fine and ultrafine particles emitted by ten different laser printing devices (LPD) is examined. The particle number concentration time series was measured as well as the particle size distributions. In parallel, emitted particles were size-selectively sampled with a cascade impactor and subsequently analyzed by the means of XRF. In order to identify potential sources for the aerosol's elemental composition, materials involved in the printing process such as toner, paper, and structural components of the printer were also analyzed. While the majority of particle emissions from laser printers are known to consist of recondensated semi volatile organic compounds, elemental analysis identifies Si, S, Cl, Ca, Ti, Cr, and Fe as well as traces of Ni and Zn in different size fractions of the aerosols. These elements can mainly be assigned to contributions from toner and paper. The detection of elements that are likely to be present in inorganic compounds is in good agreement with the measurement of nonvolatile particles. Quantitative measurements of solid particles at 400 °C resulted in residues of 1.6 × 10(9) and 1.5 × 10(10) particles per print job, representing fractions of 0.2% and 1.9% of the total number of emitted particles at room temperature. In combination with the XRF results it is concluded that solid inorganic particles contribute to LPD emissions in measurable quantities. Furthermore, for the first time Br was detected in significant concentrations in the aerosol emitted from two LPD. The analysis of several possible sources identified the plastic housings of the fuser units as main sources due to substantial Br concentrations related to brominated flame retardants.

Laser irradiation effects on the surface, structural and mechanical properties of Al-Cu alloy 2024

NASA Astrophysics Data System (ADS)

Yousaf, Daniel; Bashir, Shazia; Akram, Mahreen; kalsoom, Umm-i.-; Ali, Nisar

2014-02-01

Laser irradiation effects on surface, structural and mechanical properties of Al-Cu-Mg alloy (Al-Cu alloy 2024) have been investigated. The specimens were irradiated for various fluences ranging from 3.8 to 5.5 J/cm2 using an Excimer (KrF) laser (248 nm, 18 ns, 30 Hz) under vacuum environment. The surface and structural modifications of the irradiated targets have been investigated by scanning electron microscope (SEM) and X-ray diffractometer (XRD), respectively. SEM analysis reveals the formation of micro-sized craters along the growth of periodic surface structures (ripples) at their peripheries. The size of the craters initially increases and then decreases by increasing the laser fluence. XRD analysis shows an anomalous trend in the peak intensity and crystallite size of the specimen irradiated for various fluences. A universal tensile testing machine and Vickers microhardness tester were employed in order to investigate the mechanical properties of the irradiated targets. The changes in yield strength, ultimate tensile strength and microhardness were found to be anomalous with increasing laser fluences. The changes in the surface and structural properties of Al-Cu alloy 2024 after laser irradiation have been associated with the changes in mechanical properties.

Periodic structure formation and surface morphology evolution of glassy carbon surfaces applying 35-fs-200-ps laser pulses

NASA Astrophysics Data System (ADS)

Csontos, J.; Toth, Z.; Pápa, Z.; Budai, J.; Kiss, B.; Börzsönyi, A.; Füle, M.

2016-06-01

In this work laser-induced periodic structures with lateral dimensions smaller than the central wavelength of the laser were studied on glassy carbon as a function of laser pulse duration. To generate diverse pulse durations titanium-sapphire (Ti:S) laser (center wavelength 800 nm, pulse durations: 35 fs-200 ps) and a dye-KrF excimer laser system (248 nm, pulse durations: 280 fs, 2.1 ps) were used. In the case of Ti:S laser treatment comparing the central part of the laser-treated areas a striking difference is observed between the femtoseconds and picoseconds treatments. Ripple structure generated with short pulse durations can be characterized with periodic length significantly smaller than the laser wavelength (between 120 and 165 nm). At higher pulse durations the structure has a higher periodic length (between 780 and 800 nm), which is comparable to the wavelength. In case of the excimer laser treatment the different pulse durations produced similar surface structures with different periodic length and different orientation. One of the structures was parallel with the polarization of the laser light and has a higher periodic length (~335 nm), and the other was perpendicular with smaller periodic length (~78-80 nm). The possible mechanisms of structure formation will be outlined and discussed in the frame of our experimental results.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

PubMed Central

2013-01-01

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526