Sample records for synthesize inp micrometer

  1. Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.

    PubMed

    Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas

    2018-05-10

    The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.

  2. Single-crystalline cubic structured InP nanosprings

    NASA Astrophysics Data System (ADS)

    Shen, G. Z.; Bando, Y.; Zhi, C. Y.; Yuan, X. L.; Sekiguchi, T.; Golberg, D.

    2006-06-01

    Cubic structured nanosprings, InP nanosprings, have been synthesized via a simple thermochemical process using InP and ZnS as the source materials. Each InP nanospring is formed by rolling up a single InP nanobelt with the growth direction along the ⟨111⟩ orientation. The formation of these novel nanostructures is mainly attributed to the minimization of the electrostatic energy due to the polar charges on the ±(002) side surfaces of cubic InP. Cathodoluminescence properties were also studied, which reveal that the InP nanosprings have three emission bands centered at ˜736, ˜920, and ˜980nm.

  3. Radiation effects on p+n InP junctions grown by MOCVD

    NASA Technical Reports Server (NTRS)

    Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

    1994-01-01

    The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

  4. Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires.

    PubMed

    Zhang, Guoqiang; Rainville, Christophe; Salmon, Adrian; Takiguchi, Masato; Tateno, Kouta; Gotoh, Hideki

    2015-11-24

    This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined nanostructures, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes. We realized the bridging by controlling the seed indium nanoparticle position through a self-assembly process. Site-defined InP nanowires were then grown from the indium-nanoparticle array in the vapor-liquid-solid mode through a "seed and grow" process. The nanometer-scale indium particles do not always occupy the same locations within the micrometer-scale open window of an InP exposed substrate due to the scale difference. We developed a technique for aligning the nanometer-scale indium particles on the same side of the micrometer-scale window by structuring the surface of a misoriented InP (111)B substrate. Finally, we demonstrated that the developed method can be used to grow a uniform InP/InAs axial-heterostructure nanowire array. The ability to form a heterostructure nanowire array with this method makes it possible to tune the emission wavelength over a wide range by employing the quantum confinement effect and thus expand the application of this technology to optoelectronic devices. Successfully pairing a controllable bottom-up growth technique with a top-down substrate preparation technique greatly improves the potential for the mass-production and widespread adoption of this technology.

  5. Three-Stage InP Submillimeter-Wave MMIC Amplifier

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

    2008-01-01

    A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

  6. When is an INP not an INP?

    NASA Astrophysics Data System (ADS)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  7. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    PubMed

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  8. Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

    PubMed

    Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

    2013-02-26

    The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

  9. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    DOE PAGES

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; ...

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formationmore » of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.« less

  10. Aqueous synthesis of III-V semiconductor GaP and InP exhibiting pronounced quantum confinement.

    PubMed

    Gao, Shanmin; Lu, Jun; Chen, Nan; Zhao, Yan; Xie, Yi

    2002-12-21

    A mild aqueous synthesis route was successfully established to synthesize well crystallized and monodisperse GaP and InP nanocrystals, which were proved to exhibit pronounced quantum confinement by room-temperature UV/Vis adsorption and photoluminescence (PL) spectra.

  11. Tapping the potential of trioctylphosphine (TOP) in the realization of highly luminescent blue-emitting colloidal indium phosphide (InP) quantum dots

    NASA Astrophysics Data System (ADS)

    Singh, Akanksha; Chawla, Parul; Jain, Shefali; Sharma, Shailesh Narain

    2017-06-01

    In this work, extremely small blue emitting colloidal InP-based quantum dots (size 2-5 nm) have been synthesized using trioctylphosphine (TOP) as a source of phosphorus. The method reported here is unconventional, quite rapid ( 90 min), more viable, less expensive and relatively greener as compared to other conventional methods that employ tristrimethylsilyylphosphine(P(SiMe3)3) which is scarce, expensive, flammable, highly toxic and even banned in a few countries. Highly luminescent InP QDs having bluish-green emission (λ 490 nm) can be synthesized using this method without resorting to any post-synthesis etching to tune the emission to the blue region. Besides being the source of phosphorus and the particle size regulating agent, the efficacy of TOP is further realized during synthesis via its reduction of indium salt, which aids in the formation of indium metal and then subsequently in the development of InP QDs. The PL intensity of as-synthesized InP QDs is further enhanced by growing a shell of wide band gap material, i.e. ZnS resulting in a concurrent increment in quantum yield from 25% to 38% respectively.

  12. Optical contact micrometer

    DOEpatents

    Jacobson, Steven D.

    2014-08-19

    Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

  13. High performance photodetectors based on high quality InP nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Yan-Kun; Yang, Tie-Feng; Li, Hong-Lai; Qi, Zhao-Yang; Chen, Xin-Liang; Wu, Wen-Qiang; Hu, Xue-Lu; He, Peng-Bin; Jiang, Ying; Hu, Wei; Zhang, Qing-Lin; Zhuang, Xiu-Juan; Zhu, Xiao-Li; Pan, An-Lian

    2016-11-01

    In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

  14. Peptides for functionalization of InP semiconductors.

    PubMed

    Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

    2009-09-15

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  15. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    NASA Technical Reports Server (NTRS)

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  16. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

    PubMed Central

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

  17. Encapsulation and Implantation Studies of InP.

    DTIC Science & Technology

    1982-07-01

    concluded that PSG encapsulation best preserves the initial characteristics of encapsulated InP during furnace anneals. ( t PL measurements indicate that...gradients in these zones than does Fe. Under typical annealing conditions for InP ( T > 700 C, t = 15-30 min) it is observed using SIMS that implanted 9Be...conditions for InP ( T > 700*C, t - 15-30 min) it is observed using SIMS that implanted 9Be is a rapid diffusant in SI InP. High dose (1015 cm -2

  18. Space radiation effects in InP solar cells

    NASA Astrophysics Data System (ADS)

    Walters, R. J.; Messenger, S. R.; Summers, G. P.; Burke, E. A.; Keavney, C. J.

    1991-12-01

    InP solar cells and mesa diodes grown by metalorganic chemical vapor deposition (MOCVD) were irradiated with electrons and protons at room temperature. The radiation-induced defects (RIDs) were characterized by deep level transient spectroscopy (DLTS), and the degradation of the solar cell performance was determined through I-V measurements. The nonionizing energy loss (NIEL) of electrons and protons in InP was calculated as a function of energy from 1 to 200 MeV and compared to the measured defect introduction rates. A linear dependence was evident. InP solar cells showed significantly more radiation resistance than c-Si or GaAs/Ge cells under 1 MeV electron irradiation. Using the calculated InP damage rates and measured damage factors, the performance of InP solar cells as a function of orbital altitude and time in orbit was predicted and compared with the performance of c-Si solar cells in the same environment. In all cases, the InP cells showed highly superior radiation resistance.

  19. InP materials/cell fabrication

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.

    1987-01-01

    The main points of discussion, conclusions and recommendations of a workshop on InP materials and cell fabrication are given. The importance of assessing the quality of p-Inp crystals supplied by different vendors, back contacts to solar cells, junction formation, energy conversion efficiency, testing for radiation resistance, and future develpments were among the topics discussed.

  20. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    NASA Technical Reports Server (NTRS)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  1. A Novel Approach to Synthesize Micrometer-Sized Porous Silicon as a High Performance Anode for Lithium-Ion Batteries

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jia, Haiping; Zheng, Jianming; Song, Junhua

    Porous structured silicon (p-Si) has been recognized as one of the most promising anodes for Li-ion batteries. However, many available methods to synthesize p-Si are difficult to scale up due to their high production cost. Here we introduce a new approach to obtain spherical micrometer-sized silicon with unique porous structure by using a microemulsion of the cost-effective of silica nanoparticles and magnesiothermic reduction method. The spherical micron-sized p-Si particles prepared by this approach consist of highly aligned nano-sized silicon and exhibit a tap density close to that of bulk Si particles. They have demonstrated significantly improved electrochemical stability compared tomore » nano-Si. Well controlled void space and a highly graphitic carbon coating on the p-Si particles enable good stability of the structure and low overall resistance, thus resulting in a Si-based anode with high capacity (~1467 mAh g –1 at 1 C), enhanced cycle life (370 cycles with 83% capacity retention), and high rate capability (~650 mAh g –1 at 5 C). Furthermore, this approach may also be generalized to prepare other hierarchical structured high capacity anode materials for constructing high energy density lithium ion batteries.« less

  2. A Novel Approach to Synthesize Micrometer-Sized Porous Silicon as a High Performance Anode for Lithium-Ion Batteries

    DOE PAGES

    Jia, Haiping; Zheng, Jianming; Song, Junhua; ...

    2018-05-21

    Porous structured silicon (p-Si) has been recognized as one of the most promising anodes for Li-ion batteries. However, many available methods to synthesize p-Si are difficult to scale up due to their high production cost. Here we introduce a new approach to obtain spherical micrometer-sized silicon with unique porous structure by using a microemulsion of the cost-effective of silica nanoparticles and magnesiothermic reduction method. The spherical micron-sized p-Si particles prepared by this approach consist of highly aligned nano-sized silicon and exhibit a tap density close to that of bulk Si particles. They have demonstrated significantly improved electrochemical stability compared tomore » nano-Si. Well controlled void space and a highly graphitic carbon coating on the p-Si particles enable good stability of the structure and low overall resistance, thus resulting in a Si-based anode with high capacity (~1467 mAh g –1 at 1 C), enhanced cycle life (370 cycles with 83% capacity retention), and high rate capability (~650 mAh g –1 at 5 C). Furthermore, this approach may also be generalized to prepare other hierarchical structured high capacity anode materials for constructing high energy density lithium ion batteries.« less

  3. DOR/Tp53inp2 and Tp53inp1 constitute a metazoan gene family encoding dual regulators of autophagy and transcription.

    PubMed

    Sancho, Ana; Duran, Jordi; García-España, Antonio; Mauvezin, Caroline; Alemu, Endalkachew A; Lamark, Trond; Macias, Maria J; DeSalle, Rob; Royo, Miriam; Sala, David; Chicote, Javier U; Palacín, Manuel; Johansen, Terje; Zorzano, Antonio

    2012-01-01

    Human DOR/TP53INP2 displays a unique bifunctional role as a modulator of autophagy and gene transcription. However, the domains or regions of DOR that participate in those functions have not been identified. Here we have performed structure/function analyses of DOR guided by identification of conserved regions in the DOR gene family by phylogenetic reconstructions. We show that DOR is present in metazoan species. Invertebrates harbor only one gene, DOR/Tp53inp2, and in the common ancestor of vertebrates Tp53inp1 may have arisen by gene duplication. In keeping with these data, we show that human TP53INP1 regulates autophagy and that different DOR/TP53INP2 and TP53INP1 proteins display transcriptional activity. The use of molecular evolutionary information has been instrumental to determine the regions that participate in DOR functions. DOR and TP53INP1 proteins share two highly conserved regions (region 1, aa residues 28-42; region 2, 66-112 in human DOR). Mutation of conserved hydrophobic residues in region 1 of DOR (that are part of a nuclear export signal, NES) reduces transcriptional activity, and blocks nuclear exit and autophagic activity under autophagy-activated conditions. We also identify a functional and conserved LC3-interacting motif (LIR) in region 1 of DOR and TP53INP1 proteins. Mutation of conserved acidic residues in region 2 of DOR reduces transcriptional activity, impairs nuclear exit in response to autophagy activation, and disrupts autophagy. Taken together, our data reveal DOR and TP53INP1 as dual regulators of transcription and autophagy, and identify two conserved regions in the DOR family that concentrate multiple functions crucial for autophagy and transcription.

  4. DOR/Tp53inp2 and Tp53inp1 Constitute a Metazoan Gene Family Encoding Dual Regulators of Autophagy and Transcription

    PubMed Central

    Sancho, Ana; Duran, Jordi; García-España, Antonio; Mauvezin, Caroline; Alemu, Endalkachew A.; Lamark, Trond; Macias, Maria J.; DeSalle, Rob; Royo, Miriam; Sala, David; Chicote, Javier U.; Palacín, Manuel; Johansen, Terje; Zorzano, Antonio

    2012-01-01

    Human DOR/TP53INP2 displays a unique bifunctional role as a modulator of autophagy and gene transcription. However, the domains or regions of DOR that participate in those functions have not been identified. Here we have performed structure/function analyses of DOR guided by identification of conserved regions in the DOR gene family by phylogenetic reconstructions. We show that DOR is present in metazoan species. Invertebrates harbor only one gene, DOR/Tp53inp2, and in the common ancestor of vertebrates Tp53inp1 may have arisen by gene duplication. In keeping with these data, we show that human TP53INP1 regulates autophagy and that different DOR/TP53INP2 and TP53INP1 proteins display transcriptional activity. The use of molecular evolutionary information has been instrumental to determine the regions that participate in DOR functions. DOR and TP53INP1 proteins share two highly conserved regions (region 1, aa residues 28–42; region 2, 66–112 in human DOR). Mutation of conserved hydrophobic residues in region 1 of DOR (that are part of a nuclear export signal, NES) reduces transcriptional activity, and blocks nuclear exit and autophagic activity under autophagy-activated conditions. We also identify a functional and conserved LC3-interacting motif (LIR) in region 1 of DOR and TP53INP1 proteins. Mutation of conserved acidic residues in region 2 of DOR reduces transcriptional activity, impairs nuclear exit in response to autophagy activation, and disrupts autophagy. Taken together, our data reveal DOR and TP53INP1 as dual regulators of transcription and autophagy, and identify two conserved regions in the DOR family that concentrate multiple functions crucial for autophagy and transcription. PMID:22470510

  5. Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

    PubMed

    Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

    2016-08-31

    Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

  6. Micrometer for Measuring Trepanned Grooves

    NASA Technical Reports Server (NTRS)

    Bird, S. K.

    1983-01-01

    Special micrometer measures diameter of circular groove on face of large part, while part is mounted in lathe chuck. Tool has curved frame so it can reach around obstruction on centerline of part. At one end of frame is blade/ micrometer spindle for reaching into groove to be measured; this type of spindle does not rotate when micrometer thimble is turned in taking measurement. Other end of frame has sliding foot with blade.

  7. InP nanopore arrays for photoelectrochemical hydrogen generation.

    PubMed

    Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

    2016-02-19

    We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

  8. Summary of Workshop on InP: Status and Prospects

    NASA Technical Reports Server (NTRS)

    Walters, R. J.; Weinberg, I.

    1994-01-01

    The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

  9. Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Lounis, Z.; Bouslama, M.; Hamaida, K.; Jardin, C.; Abdellaoui, A.; Ouerdane, A.; Ghaffour, M.; Berrouachedi, N.

    2012-02-01

    We give the great interest to characterise the InP and InPO4/InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In2O3. We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

  10. Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

    PubMed

    Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

    2017-06-14

    The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

  11. P/N InP solar cells on Ge wafers

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  12. Electron guns and collectors developed at INP for electron cooling devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sharapa, A.N.; Shemyakin, A.V.

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  13. CNPq/INPE-LANDSAT system

    NASA Technical Reports Server (NTRS)

    Debarrosaguirre, J. L.

    1985-01-01

    The current status of the Brazilian LANDSAT facilities operated by Instituto de Pesquisas Espaciais (INPE) and the results achieved during the period from October 1, 1984 to August 31, 1985 are presented. INPE's Receiving Station at Cuiaba, MT, operates normally the two tracking and receiving systems it has installed, the old one (1973) for Band S and the new one (February 1983) for dual S- and X-band. Both MSS and TM recording capabilities are functional. Support to the NASA Backup Plan for MSS data also remains active. Routine recordings are being made for LANDSAT-5 only, for both MSS and TM. Originally, MSS was recorded over the full acquisition range. However, since December, 1984, due to further reduction of operational expenses, both instruments are being recorded over Brazilian territory only.

  14. InP concentrator solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Ward, J. S.; Wanlass, M. W.; Coutts, T. J.; Emery, K. A.

    1991-01-01

    The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined.

  15. Graphene enhanced field emission from InP nanocrystals.

    PubMed

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  16. Lateral spreading of Au contacts on InP

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1990-01-01

    The contact spreading phenomenon observed when small area Au contacts on InP are annealed at temperatures above about 400 C was investigated. It was found that the rapid lateral expansion of the contact metallization which consumes large quantities of InP during growth is closely related to the third stage in the series of solid state reactions that occur between InP and Au, i.e., to the Au3In-to-Au9In4 transition. Detailed descriptions are presented of both the spreading process and the Au3In-to-Au9In4 transition along with arguments that the two processes are manifestations of the same basic phenomenon.

  17. Graphene enhanced field emission from InP nanocrystals

    NASA Astrophysics Data System (ADS)

    Iemmo, L.; Di Bartolomeo, A.; Giubileo, F.; Luongo, G.; Passacantando, M.; Niu, G.; Hatami, F.; Skibitzki, O.; Schroeder, T.

    2017-12-01

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  18. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  19. Long-Term INP Measurements within the BACCHUS project

    NASA Astrophysics Data System (ADS)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  20. Level Indicator On A Tubular Inside Micrometer

    NASA Technical Reports Server (NTRS)

    Malinzak, R. Michael; Booth, Gary N.

    1995-01-01

    Leveling helps to ensure accurate measurements. Attachment helpful because in some situations that involve measurement of large, tight-tolerance inside dimensions, inside micrometers not held level between contact point give inaccurate readings. User adjusts position and orientation of micrometer and verifies level by observing bubble in level indicator. Upon feeling correct drag between micrometer tips and workpiece, user confident that tool used correctly and accurate measurement obtained.

  1. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    PubMed

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  2. Preferentially etched epitaxial liftoff of InP material

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); Deangelo, Frank L. (Inventor)

    1995-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  3. Preferentially Etched Epitaxial Liftoff of InP Material

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); DeAngelo, Frank L. (Inventor)

    1997-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  4. Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

    PubMed

    Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

    2015-06-18

    To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

  5. Electrochemical characterization of p(+)n and n(+)p diffused InP structures

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Faur, Maria; Faur, Mircea; Goradia, M.; Vargas-Aburto, Carlos

    1993-01-01

    The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.

  6. Automatic readout micrometer

    DOEpatents

    Lauritzen, Ted

    1982-01-01

    A measuring system is disclosed for surveying and very accurately positioning objects with respect to a reference line. A principal use of this surveying system is for accurately aligning the electromagnets which direct a particle beam emitted from a particle accelerator. Prior art surveying systems require highly skilled surveyors. Prior art systems include, for example, optical surveying systems which are susceptible to operator reading errors, and celestial navigation-type surveying systems, with their inherent complexities. The present invention provides an automatic readout micrometer which can very accurately measure distances. The invention has a simplicity of operation which practically eliminates the possibilities of operator optical reading error, owning to the elimination of traditional optical alignments for making measurements. The invention has an extendable arm which carries a laser surveying target. The extendable arm can be continuously positioned over its entire length of travel by either a coarse or fine adjustment without having the fine adjustment outrun the coarse adjustment until a reference laser beam is centered on the target as indicated by a digital readout. The length of the micrometer can then be accurately and automatically read by a computer and compared with a standardized set of alignment measurements. Due to its construction, the micrometer eliminates any errors due to temperature changes when the system is operated within a standard operating temperature range.

  7. Automatic readout micrometer

    DOEpatents

    Lauritzen, T.

    A measuring system is described for surveying and very accurately positioning objects with respect to a reference line. A principle use of this surveying system is for accurately aligning the electromagnets which direct a particle beam emitted from a particle accelerator. Prior art surveying systems require highly skilled surveyors. Prior art systems include, for example, optical surveying systems which are susceptible to operator reading errors, and celestial navigation-type surveying systems, with their inherent complexities. The present invention provides an automatic readout micrometer which can very accurately measure distances. The invention has a simplicity of operation which practically eliminates the possibilities of operator optical reading error, owning to the elimination of traditional optical alignments for making measurements. The invention has an extendable arm which carries a laser surveying target. The extendable arm can be continuously positioned over its entire length of travel by either a coarse of fine adjustment without having the fine adjustment outrun the coarse adjustment until a reference laser beam is centered on the target as indicated by a digital readout. The length of the micrometer can then be accurately and automatically read by a computer and compared with a standardized set of alignment measurements. Due to its construction, the micrometer eliminates any errors due to temperature changes when the system is operated within a standard operating temperature range.

  8. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    PubMed

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  9. Cathodoluminescence of InP

    NASA Technical Reports Server (NTRS)

    Gatos, C. H.; Vaughan, J. J.; Lagowski, J.; Gatos, H. C.

    1981-01-01

    Cathodoluminescence studies were carried out on p-type InP having carrier concentrations ranging from 7.2 x 10 to the 16th to 7.4 x 10 to the 18th per cu cm in the temperature range of 80-580 K. It was found that low-temperature spectra exhibited peaks at 1.41 and 1.38 eV. These peaks were attributed to band-to-band and band-acceptor transitions, respectively. The dependence of the band-to-band peak on temperature was used to extend knowledge of the temperature dependence of the energy gap of InP to 550 K. It was shown that the half-width of the cathodoluminescence peak can be used for the determination of carrier concentration and carrier-concentration inhomogeneities in the material. The variations of the cathodoluminescence peak height with temperature indicated the possibility of Auger recombination for high carrier concentrations (7.4 x 10 to the 18th per cu cm) at temperatures above 450 K.

  10. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

    PubMed

    Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-12-10

    Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

  11. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

    PubMed

    Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2012-10-10

    Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

  12. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

    PubMed

    Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

    2011-10-21

    High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

  13. Radiation effects in heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

    1993-01-01

    Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

  14. Airborne astronomy with a 150 micrometer - 500 micrometer heterodyne spectrometer

    NASA Technical Reports Server (NTRS)

    Betz, A. L.

    1991-01-01

    This report summarizes work done under NASA Grant NAG2-254 awarded to the University of California. The project goal was to build a far-infrared heterodyne spectrometer for NASA's Kuiper Airborne Observatory (KAO), and to use this instrument to observe atomic and molecular spectral lines from the interstellar medium. This goal was successfully achieved; the spectrometer is now in routine use aboard the KAO. Detections of particular note have been the 370 micrometers line of neutral atomic carbon, the 158 micrometers transition of ionized carbon, many of the high-J rotational lines of 12CO and 13CO between J=9-8 and J=22-21, the 119 micron ground-state rotational line of OH, and the 219 micron ground-state rotational line of H2D(+). All of these lines were observed at spectral resolutions exceeding 1 part in 10(exp 6), thereby allowing accurate line shapes and Doppler velocities to be measured.

  15. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

    PubMed

    Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

    2017-12-15

    We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

  16. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    PubMed

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.

  17. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    PubMed

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  18. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    NASA Technical Reports Server (NTRS)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  19. An improved large signal model of InP HEMTs

    NASA Astrophysics Data System (ADS)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  20. Workshop on Heteroepitaxial InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Walters, R. W.

    1993-01-01

    In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

  1. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    PubMed

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  2. Oxidation of InP nanowires: a first principles molecular dynamics study.

    PubMed

    Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

    2016-11-16

    InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

  3. A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

    PubMed

    Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

    2011-08-01

    Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

  4. Systems and methods for advanced ultra-high-performance InP solar cells

    DOEpatents

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  5. Voc Degradation in TF-VLS Grown InP Solar Cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sun, Yubo; Sun, Xingshu; Johnston, Steve

    2016-11-21

    Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the wholemore » sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.« less

  6. Scalable InP integrated wavelength selector based on binary search.

    PubMed

    Calabretta, Nicola; Stabile, Ripalta; Albores-Mejia, Aaron; Williams, Kevin A; Dorren, Harm J S

    2011-10-01

    We present an InP monolithically integrated wavelength selector that implements a binary search for selecting one from N modulated wavelengths. The InP chip requires only log(2)N optical filters and log(2)N optical switches. Experimental results show nanosecond reconfiguration and error-free wavelength selection of four modulated wavelengths with 2 dB of power penalty. © 2011 Optical Society of America

  7. Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

    PubMed

    Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

    2012-07-01

    A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

  8. Comparative modeling of InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  9. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    PubMed

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  10. Terahertz excitation spectra of InP single crystals

    NASA Astrophysics Data System (ADS)

    Norkus, R.; Arlauskas, A.; Krotkus, A.

    2018-07-01

    Investigation of terahertz (THz) pulse generation from semi-insulating and n-type InP crystals surfaces is presented in this letter. In order to determine energy separation between the main and subsidiary conduction band valleys, THz pulse amplitude dependences on the photoexcitation wavelength (in a range of 410–950 nm) were measured. These dependences had a clear maximum at ∼540 nm, from which the inter-valley energy separation in the conduction band of InP as equal to 0.75 eV was determined. Moreover, THz generation mechanisms at laser excited surfaces of InP were investigated by additionally analyzing the azimuthal angle dependences of the emitted THz signal amplitude and power. It has been shown that the main physical mechanism of the surface THz emission in this material is the spatial separation of photoexcited electrons and holes, which can also lead to a symmetry similar to the second order optical nonlinearity. Photocurrent surge in the surface electric field can also contribute to the THz emission from a semi-insulating crystal illuminated by optical pulses with the wavelengths close to the absorption edge.

  11. On the Nature of the First Galaxies Selected at 350 Micrometers

    NASA Technical Reports Server (NTRS)

    Khan, Sophia A.; Chanial, Pierre F.; Willner, S. P.; Pearson, Chris P.; Ashby, M. L. N.; Benford, Dominic J.; Clements, David L.; Dye, Simon; Farrah, Duncan; Fazio, G. G.; hide

    2009-01-01

    We present constraints on the nature of the first galaxies selected at 350 micrometers. The sample includes galaxies discovered in the deepest blank-field survey at 350 micrometers (in the Bo6tes Deep Field) and also later serendipitous detections in the Lockman Hole. In determining multiwavelength identifications, the 350 lam position and map resolution of the second generation Submillimeter High Angular Resolution Camera are critical, especially in the cases where multiple radio sources exist and the 24 micrometer counterparts are unresolved. Spectral energy distribution templates are fitted to identified counterparts, and the sample is found to comprise IR-luminous galaxies at 1 < z < 3 predominantly powered by star formation. The first spectrum of a 350 micrometer selected galaxy provides an additional confirmation, showing prominent dust grain features typically associated with star-forming galaxies. Compared to submillimeter galaxies selected at 850 and 1100 micrometers, galaxies selected at 350 micrometers have a similar range of far-infrared color temperatures. However, no 350 micrometer selected sources are reliably detected at 850 or 1100 micrometers. Galaxies in our sample with redshifts 1 < z < 2 show a tight correlation between the far- and mid-infrared flux densities, but galaxies at higher redshifts show a large dispersion in their mid- to far-infrared colors. This implies a limit to which the mid-IR emission traces the far-IR emission in star-forming galaxies. The 350 micrometer flux densities (15 < S(sub 350) < 40 mJy) place these objects near the Herschel/SPIRE 350 micrometer confusion threshold, with the lower limit on the star formation rate density suggesting the bulk of the 350 micrometers contribution will come from less luminous infrared sources and normal galaxies. Therefore, the nature of the dominant source of the 350 micrometers background-star-forming galaxies in the epoch of peak star formation in the universe-could be more effectively

  12. Low temperature InP /Si wafer bonding using boride treated surface

    NASA Astrophysics Data System (ADS)

    Huang, Hui; Ren, Xiaomin; Wang, Wenjuan; Song, Hailan; Wang, Qi; Cai, Shiwei; Huang, Yongqing

    2007-04-01

    An approach for InP /Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.

  13. Better Ohmic Contacts For InP Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

  14. Diameter Dependence of Planar Defects in InP Nanowires

    PubMed Central

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-01-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications. PMID:27616584

  15. Diameter Dependence of Planar Defects in InP Nanowires.

    PubMed

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

    2016-09-12

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

  16. Transfer of InP epilayers by wafer bonding

    NASA Astrophysics Data System (ADS)

    Hjort, Klas

    2004-08-01

    Wafer bonding increases the freedom of design in the integration of dissimilar materials. For example, it is interesting to combine III-V compounds that have direct band gap and high mobility with silicon (Si) that is extensively used in microelectronic applications. The interest to integrate III-V-based materials with Si arises primarily from two types of applications: smart pixels for optical intra- and inter-chip interconnects in the so-called optoelectronic integrated circuits, and optoelectronic devices using some material advantages of combining III-V with Si. Also, in the III-V industry larger substrates are crucial for higher efficiency in high-volume production, and especially so for monolithic microwave integrated circuits (MMIC). For indium phosphide (InP) the development of large-area substrates has not been able to keep up with market demands. One way to circumvent this problem is to use silicon substrates that are large-area, low-cost, and mechanically strong with high thermal conductivity. In addition, silicon is transparent at the emission wavelengths most often used in InP-based optoelectronics. Unfortunately, the large lattice-mismatch, 8.1%, between silicon and InP, has limited the success of heteroepitaxial growth. Hence, one alternative to be reviewed is InP-to-Si wafer bonding. When a direct semiconductor interface is not needed there are several other means of wafer bonding, e.g. adhesive, eutectic, and solid-state. These processes can be used for direct integration of small islets of epitaxially thin InP microelectronics onto other substrates, e.g. by transferring of InP-based epilayers to a Si-based microwave circuit by pick-and-place, BCB resist adhesive bonding and sacrificing of the InP substrate.

  17. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    PubMed Central

    2011-01-01

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa PMID:21711809

  18. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

    PubMed

    Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

    2011-03-31

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

  19. Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates

    NASA Astrophysics Data System (ADS)

    Galiev, G. B.; Klimova, E. A.; Pushkarev, S. S.; Klochkov, A. N.; Trunkin, I. N.; Vasiliev, A. L.; Maltsev, P. P.

    2017-07-01

    The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411) A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411) A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411) A substrates into polycrystalline ones.

  20. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

    PubMed

    Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

    2014-01-08

    Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

  1. High performance InP JFETs grown by MOCVD using tertiarybutylphosphine

    NASA Astrophysics Data System (ADS)

    Hashemi, M. M.; Shealy, J. B.; Corvini, P. J.; Denbaars, S. P.; Mishra, U. K.

    1994-02-01

    Indium phosphide channel junction field effect transistors were fabricated by metalorganic chemical vapor deposition using tertiarybulylphosphine (TBP) as the alternative source for phosphine. At growth temperatures of 600°C, InP with specular surface morphology and mobilities as high as 61000 cm2/V s at 77Khas been achieved using trimethylindium and TBP. To improve device isolation, pinch-off characteristics, and output transconductance, we employ a high resistivity (1 × 108 Ω-cm) semi-insulating InP buffer layer using ferrocene as the Fe-dopant. Devices with gate lengths of 1 urn exhibit very high extrinsic transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, maximum current density of >450 mA/mm with record high fT and fmax of 15 GHz and 35 GHz, respectively. These results indicate: that InP JFETs are promising electronic devices for microwave power amplification, and that TBP is capable of device quality materials.

  2. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    PubMed

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  3. Thermal degradation of InP in open tube processing: deep-level photoluminescence

    NASA Astrophysics Data System (ADS)

    Banerjee, S.; Srivastava, A. K.; Arora, B. M.

    1990-09-01

    Thermal processing of InP at temperatures above 500 °C is indispensable in the growth and device fabrication of InGaAsP alloy semiconductors for optoelectronic and microwave applications. Incongruous loss of P at these temperatures creates native defects and their complexes. The presence of such defects modifies the electrical and optical properties of the material resulting in poor device performance. In addition, native defects play a significant role in dopant diffusion which is a topic of current interest. We have measured deep-level photoluminescence (PL) on undoped InP after heat treatments at 500 and 550 °C in an open-tube processing system in different protective environments of powder InP, and Sn-InP melt together with an InP cover. In this paper we shall present the PL results which have bearing on the question of defects. We find that (1) the Sn-InP melt provides better protection in preserving the overall luminescence in InP; (2) the deep-level PL related to defects has at least two components in the virgin samples, viz., MnIn, and band C, which is a native defect complex related to VP; (3) a new defect appears in samples heated in a P-deficient environment; and (4) the enhancement in the deep-level luminescence intensity after heat treatment can be attributed to the excess defect concentrations existing under nonequilibrium conditions of an open-tube processing environment.

  4. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    NASA Technical Reports Server (NTRS)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  5. Structural, electronic and magnetic properties of metal thiophosphate InPS4

    NASA Astrophysics Data System (ADS)

    Rajpoot, Priyanka; Nayak, Vikas; Kumari, Meena; Yadav, Priya; Nautiyal, Shashank; Verma, U. P.

    2017-05-01

    The non-centrosymmetric crystal, InPS4, has been investigated by means of density functional theory (DFT). In this paper we have calculated the structural parameters, electronic band structures, density of states plot and magnetic properties using full potential linearized augmented plane wave (FP-LAPW) method. The exchange correlation has been solved employing the generalised gradient approximation due to Perdew-Burke-Ernzerhof. The calculations are performed both without spin as well as spin polarized. The results show that InPS4 is an indirect band gap semiconductor with (N-Г) energy gap of 2.32eV (without spin) and 1.86eV in spin up and down channels.The obtained lattice parameters and energy gap agree well with the experimental results. Our reported magnetic moment results show that the property of InPS4is nonmagnetic.

  6. InP on SOI devices for optical communication and optical network on chip

    NASA Astrophysics Data System (ADS)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  7. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  8. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  9. High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

    NASA Astrophysics Data System (ADS)

    Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

    This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

  10. Comparison of the 3.36 micrometer feature to the ISM

    NASA Technical Reports Server (NTRS)

    Tokunaga, Alan T.; Brooke, Timothy Y.

    1988-01-01

    It has been noted that the 3.36 micrometer emission feature is not the same as that of any ISM band at 3.4 micrometer. This is documented herein. There is no convincing analog to the cometary 3.36 micrometer emission feature seen in the Interstellar Matter band. This fact suggests that if the carbonaceous material in comets came from the ISM, it was either further processed in the solar nebula or has a different appearance because of the different excitation environment of the sun and ISM.

  11. Beyond G-band : a 235 GHz InP MMIC amplifier

    NASA Technical Reports Server (NTRS)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  12. Potential for use of InP solar cells in the space radiation environment

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

  13. Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

  14. Observations of far-infrared fine structure lines: o III88.35 micrometer and oI 63.2 micrometer

    NASA Technical Reports Server (NTRS)

    Storey, J. W. V.; Watson, D. M.; Townes, C. H.

    1979-01-01

    Observations of the O III 88.35 micrometer line and the O I63.2 micrometer were made with a far infrared spectrometer. The sources M17, NGC 7538, and W51 were mapped in the O III line with 1 arc minute resolution and the emission is found to be quite widespread. In all cases the peak of the emission coincides with the maximum radio continuum. The far infrared continuum was mapped simultaneously and in M17, NGC 7538, and W51 the continuum peak is found to be distinct from the center of ionization. The O III line was also detected in W3, W49, and in a number of positions in the Orion nebula. Upper limits were obtained on NGS 7027, NGC 6572, DR21, G29.9-0.0 and M82. The 63.2 micrometer O I line was detected in M17, M42, and marginally in DR21. A partial map of M42 in this line shows that most of the emission observed arises from the Trapezium and from the bright optical bar to the southeast.

  15. Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

    PubMed

    Zilli, Attilio; De Luca, Marta; Tedeschi, Davide; Fonseka, H Aruni; Miriametro, Antonio; Tan, Hark Hoe; Jagadish, Chennupati; Capizzi, Mario; Polimeni, Antonio

    2015-04-28

    Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

  16. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  17. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  18. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    PubMed

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic <--> swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  19. Sharing of Data Products From CPTEC/INPE and New Developments for Data Distribution

    NASA Astrophysics Data System (ADS)

    Almeida, W. G.; Lima, A. A.; Pessoa, A. S.; Ferreira, A. T.; Mendes, M. V.; Ferreira, N. J.; Silva Dias, M. F.; Yoksas, T.

    2006-05-01

    The CPTEC is the Center for Weather Forecast and Climatic Analysis, a division of the INPE, the Brazilian National Institute for Space Research. The CPTEC is an operational and research center, that runs the fastest supercomputer and is a pioneer in global and regional numerical weather forecasting in South America. The INPE is a traditional provider of data, softwares and services for researchers, forecasters and decision makers in Brazil and South America. The institution is a reference for space science, satellite imagery, and environmental studies. Several of the INPE's departments and centers, like the CPTEC, have a variety of valuable datasets, many of them freely available. Currently the politics of "free data and software" is being strengthened, as the INPE's administration has stated it as a priority for the following years. The CPTEC/INPE distributes outputs from several numerical models, like the COLA/CPTEC global model, and regional models for South America, among others. The web and FTP servers also are used to disseminate satellite imagery, satellite derived products, and data from INPE's automated reporting network. Products from the GTS data also are available. To improve these services new servers for FTP and internet are being installed. The data-sharing component of the Unidata Internet Data Distribution (IDD) also is being used to disseminate these data to university participants in both the South American IDD-Brazil and North American IDD. The IDD- Brasil is the expansion of the IDD system in Brazil, and now is delivering data to a rapidly increasing community of university users. Some months ago the CPTEC finished the installation of two new LDM/IDD servers for data relaying and dissemination. With this infrastructure the author believe that the LDM/IDD demand in South America must be attended for the next three years. Some projects and developments are under execution to provide external access to broader set of meteorological and hydro

  20. Optical properties of Sulfur doped InP single crystals

    NASA Astrophysics Data System (ADS)

    El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

    2014-05-01

    Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

  1. Band gap and band offset of (GaIn)(PSb) lattice matched to InP

    NASA Astrophysics Data System (ADS)

    Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

    2005-07-01

    Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

  2. Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

    PubMed

    Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

    2017-08-04

    We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

  3. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  4. Carrier removal and defect behavior in p-type InP

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  5. Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

    PubMed

    Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

    2016-09-06

    This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

  6. Reading Outside Micrometers. Courseware Evaluation for Vocational and Technical Education.

    ERIC Educational Resources Information Center

    Sommer, Sandra; And Others

    This courseware evaluation rates the Reading Outside Micrometers program developed by EMC Publishing Company. (The program--not contained in this document--uses high resolution graphics to illustrate the micrometer's components, functions, and practical applications.) Part A describes the program in terms of subject area and equipment requirements…

  7. [Managment system in safety and health at work organization. An Italian example in public sector: Inps].

    PubMed

    Di Loreto, G; Felicioli, G

    2010-01-01

    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  8. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dennis, Allison M.; Mangum, Benjamin D.; Piryatinski, Andrei

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDsmore » to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.« less

  9. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

    PubMed

    Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

    2017-12-01

    X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

  10. Correlation of electron and proton irradiation-induced damage in InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.; Burke, Edward A.

    1996-01-01

    The measured degradation of epitaxial shallow homojunction n(+)/p InP solar cells under 1 MeV electron irradiation is correlated with that measured under 3 MeV proton irradiation based on 'displacement damage dose'. The measured data is analyzed as a function of displacement damage dose from which an electron to proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.

  11. Optical and structural properties of 100 MeV Fe{sup 9+} ion irradiated InP

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dubey, R. L., E-mail: radhekrishna.dubey@xaviers.edu; Department of Physics, University of Mumbai, Mumbai-400 032; Dubey, S. K.

    2016-05-06

    Single crystal InP samples were irradiated with 100 MeV Fe{sup 9+} ions for ion fluences 1x10{sup 12} and 1x10{sup 13} cm{sup −2}. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease inmore » the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.« less

  12. Experiences with digital processing of images at INPE

    NASA Technical Reports Server (NTRS)

    Mascarenhas, N. D. A. (Principal Investigator)

    1984-01-01

    Four different research experiments with digital image processing at INPE will be described: (1) edge detection by hypothesis testing; (2) image interpolation by finite impulse response filters; (3) spatial feature extraction methods in multispectral classification; and (4) translational image registration by sequential tests of hypotheses.

  13. Wideband 1.064 micrometer detector evaluation

    NASA Technical Reports Server (NTRS)

    Green, S. I.

    1975-01-01

    The performance of several candidate detectors for use as communications detectors in a 400 Mbps 1.064 micrometers laser communication system was evaluated. The results of communication system Bit Error Rate (BER) testing for the best detector of each type are summarized. Complete testing data of each type detector is presented. The 400 Mbps 1.064 micrometers communication system receiver test bed is described. The best communication system results for each detector type are included. Performance comparisons are made at 0.000001 BER, the specification level chosen for satellite laser communication links. The data is presented in two groups. The first indicates the best performance levels that can be expected on normal space laser communication system operation. The second cites the best performance levels which can be achieved by focusing the signal to diffraction limited spots on the photosensitive area.

  14. InP solar cell with window layer

    NASA Technical Reports Server (NTRS)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  15. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

    PubMed

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-12-17

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

  16. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    PubMed

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  17. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    PubMed

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  18. TP53INP1 is a novel p73 target gene that induces cell cycle arrest and cell death by modulating p73 transcriptional activity.

    PubMed

    Tomasini, Richard; Seux, Mylène; Nowak, Jonathan; Bontemps, Caroline; Carrier, Alice; Dagorn, Jean-Charles; Pébusque, Marie-Josèphe; Iovanna, Juan L; Dusetti, Nelson J

    2005-12-08

    TP53INP1 is an alternatively spliced gene encoding two nuclear protein isoforms (TP53INP1alpha and TP53INP1beta), whose transcription is activated by p53. When overexpressed, both isoforms induce cell cycle arrest in G1 and enhance p53-mediated apoptosis. TP53INP1s also interact with the p53 gene and regulate p53 transcriptional activity. We report here that TP53INP1 expression is induced during experimental acute pancreatitis in p53-/- mice and in cisplatin-treated p53-/- mouse embryo fibroblasts (MEFs). We demonstrate that ectopic expression of p73, a p53 homologue, leads to TP53INP1 induction in p53-deficient cells. In turn, TP53INP1s alters the transactivation capacity of p73 on several p53-target genes, including TP53INP1 itself, demonstrating a functional association between p73 and TP53INP1s. Also, when overexpressed in p53-deficient cells, TP53INP1s inhibit cell growth and promote cell death as assessed by cell cycle analysis and colony formation assays. Finally, we show that TP53INP1s potentiate the capacity of p73 to inhibit cell growth, that effect being prevented when the p53 mutant R175H is expressed or when p73 expression is blocked by a siRNA. These results suggest that TP53INP1s are functionally associated with p73 to regulate cell cycle progression and apoptosis, independently from p53.

  19. The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program

    NASA Astrophysics Data System (ADS)

    Schuch, Nelson Jorge; Cupertino Durao, Otavio S.

    The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (CBP) and the results of the NANOSATC-BR1, the first Brazilian CubeSat launching, expected for 2014's first semester, are presented. The CBP consists of two CubeSats, NANOSATC-BR 1 (1U) & 2 (2U) and is expected operate in orbit for at least 12 months each, with capacity building in space science, engineering and computer sciences for the development of space technologies using CubeSats satellites. The INPE-UFSM’s CBP Cooperation is basically among: (i) the Southern Regional Space Research Center (CRS), from the Brazilian INPE/MCTI, where acts the Program's General Coordinator and Projects NANOSATC-BR 1 & 2 Manager, having technical collaboration and management of the Mission’s General Coordinator for Engineering and Space Technology at INPE’s Headquarter (HQ), in São José dos Campos, São Paulo; (ii) the Santa Maria Space Science Laboratory (LACESM/CT) from the Federal University of Santa Maria - (UFSM); (iii) the Santa Maria Design House (SMDH); (iv) the Graduate Program in Microelectronics from the Federal University of Rio Grande do Sul (MG/II/UFRGS); and (v) the Aeronautic Institute of Technology (ITA/DCTA/CA-MD). The INPE-UFSM’s CBP has the involvement of UFSM' undergraduate students and graduate students from: INPE/MCTI, MG/II/UFRGS and ITA/DCTA/CA-MD. The NANOSATC-BR 1 & 2 Projects Ground Stations (GS) capacity building operation with VHF/UHF band and S-band antennas, are described in two specific papers at this COSPAR-2014. This paper focuses on the development of NANOSATC-BR 1 & 2 and on the launching of NANOSATC-BR1. The Projects' concepts were developed to: i) monitor, in real time, the Geospace, the Ionosphere, the energetic particle precipitation and the disturbances at the Earth's Magnetosphere over the Brazilian Territory, and ii) the determination of their effects on regions such as the South American Magnetic Anomaly (SAMA) and the Brazilian sector of the

  20. High Beginning-of-Life Efficiency p/n InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Weizer, Victor G.; Jenkins, Phillip P.; Ringel, Steven A.; Scheiman, David A.; Wilt, David M.; Brinker, David J.

    2004-01-01

    We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.

  1. [The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

    PubMed

    Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

    2016-02-01

    Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

  2. Deposition of InP on Si Substrates for Monolithic Integration of Advanced Electronics

    DTIC Science & Technology

    1988-05-01

    radiation resistance of InP has been demonstrated (in terms of solar cell experiments) to be quite superior to that of either GaAs or Si.( 1 , 2) In fact... photovoltaic p/n junction devices irradiated by I MeV electrons have been shown to almost totallv recover their electrical performance by annealing at...in the literature.(l5 2 2) The NTT group has succeeded in growing InP films directly on Si substrates and in fabricating solar cells (approximately 3

  3. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    PubMed Central

    2015-01-01

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

  4. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

    DOE PAGES

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

    2014-09-25

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

  5. Titan's 5 micrometers spectral window: carbon monoxide and the albedo of the surface

    NASA Technical Reports Server (NTRS)

    Noll, K. S.; Geballe, T. R.; Knacke, R. F.; Pendleton, Y. J.

    1996-01-01

    We have measured the spectrum of Titan near 5 micrometers and have found it to be dominated by absorption from the carbon monoxide 1-0 vibration-rotation band. The position of the band edge allows us to constrain the abundance of CO in the atmosphere and/or the location of the reflecting layer in the atmosphere. In the most likely case, 5 micrometers radiation is reflected from the surface and the mole fraction of CO in the atmosphere is qCO=10(+10/-5) ppm, significantly lower than previous estimates for tropospheric CO. The albedo of the reflecting layer is approximately 0.07(+0.02/-0.01) in the 5 micrometers continuum outside the CO band. The 5 micrometers albedo is consistent with a surface of mixed ice and silicates similar to the icy Galilean satellites. Organic solids formed in simulated Titan conditions can also produce similar albedos at 5 micrometers.

  6. Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

    PubMed

    Chauvin, Nicolas; Mavel, Amaury; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel; Machon, Denis

    2016-05-11

    The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

  7. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    PubMed

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  8. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Coutts, T. J.

    1988-01-01

    The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

  9. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Coutts, T. J.

    1988-01-01

    The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

  10. Characterization of CVD micrometer-size diamond (abstract)

    NASA Astrophysics Data System (ADS)

    Ohsumi, K.; Hagiya, K.; Miyamoto, M.; Matsuda, J.; Ohmasa, M.

    1989-07-01

    formed from carbonaceous materials by impact shock or directly formed from vapor. Recent discovery of vapor-growth diamonds in carbonaceous chondrites has generated a renewed interest in the origin of ureilite diamonds. Two types of micrometer-size diamonds were prepared. One of them was grown under low pressure by chemical vapor deposition (CVD) from gaseous mixtures of H2 and CH4, and another was synthesized by shock effect (kindly offered by Nippon Oil & Fats Co., Ltd.) The micro-Laue method was applied to them in order to get information about their microstructures. Two characteristics are recognized in profiles of reflections themselves and in whole patterns of the Laue photographs. The reflections of CVD diamonds are elongated but symmetric in their profiles and are distributed regularly as they are indexed by the diamond lattice, while those of shock effect are also elongated and asymmetric, and are distributed at random as they cannot be indexed. The characteristics observed by the method may be useful to ascribe the origin to CVD or shock effect.

  11. INPE LANDSAT-D thematic mapper computer compatible tape format specification

    NASA Technical Reports Server (NTRS)

    Parada, N. D. J. (Principal Investigator); Desouza, R. C. M.

    1982-01-01

    The format of the computer compatible tapes (CCT) which contain Thematic Mapper (TM) imagery data acquired from the LANDSAT D and D Prime satellites by the INSTITUTO DE PERSQUISAS ESPACIALS (CNPq-INPE/BRAZIL) is defined.

  12. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    NASA Astrophysics Data System (ADS)

    Mamouri, R. E.; Ansmann, A.

    2015-12-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN) and with radius > 250 nm (APC250, reservoir of favorable INP), as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization) can be retrieved from lidar-derived aerosol extinction coefficients (AEC) with relative uncertainties of a factor of around 2 (APC50), and of about 25-50 % (APC250, ASC). Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke). We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine). Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN) and published INP parameterization schemes (with APC250 and ASC as input) we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  13. An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

    NASA Technical Reports Server (NTRS)

    Cohen, Marshall J.; Ettenberg, Martin H.; Lange, Michael J.; Olsen, Gregory H.

    1999-01-01

    PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

  14. Carrier-induced ferromagnetism in the insulating Mn-doped III-V semiconductor InP

    NASA Astrophysics Data System (ADS)

    Bouzerar, Richard; May, Daniel; Löw, Ute; Machon, Denis; Melinon, Patrice; Zhou, Shengqiang; Bouzerar, Georges

    2016-09-01

    Although InP and GaAs have very similar band structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than those of (Ga,Mn)As and scale linearly with Mn concentration. This is in contrast to the square-root behavior found in (Ga,Mn)As. Moreover the magnetization curve exhibits an unconventional shape in (In,Mn)P contrasting with the conventional one of well-annealed (Ga,Mn)As. By combining several theoretical approaches, the nature of ferromagnetism in Mn-doped InP is investigated. It appears that the magnetic properties are essentially controlled by the position of the Mn acceptor level. Our calculations are in excellent agreement with recent measurements for both critical temperatures and magnetizations. The results are only consistent with a Fermi level lying in an impurity band, ruling out the possibility to understand the physical properties of Mn-doped InP within the valence band scenario. The quantitative success found here reveals a predictive tool of choice that should open interesting pathways to address magnetic properties in other compounds.

  15. Effect of dislocations on properties of heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Curtis, H. B.; Brinker, D. J.; Jenkins, P.; Faur, M.

    1991-01-01

    The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

  16. On the usage of classical nucleation theory in quantification of the impact of bacterial INP on weather and climate

    NASA Astrophysics Data System (ADS)

    Sahyoun, Maher; Wex, Heike; Gosewinkel, Ulrich; Šantl-Temkiv, Tina; Nielsen, Niels W.; Finster, Kai; Sørensen, Jens H.; Stratmann, Frank; Korsholm, Ulrik S.

    2016-08-01

    Bacterial ice-nucleating particles (INP) are present in the atmosphere and efficient in heterogeneous ice-nucleation at temperatures up to -2 °C in mixed-phase clouds. However, due to their low emission rates, their climatic impact was considered insignificant in previous modeling studies. In view of uncertainties about the actual atmospheric emission rates and concentrations of bacterial INP, it is important to re-investigate the threshold fraction of cloud droplets containing bacterial INP for a pronounced effect on ice-nucleation, by using a suitable parameterization that describes the ice-nucleation process by bacterial INP properly. Therefore, we compared two heterogeneous ice-nucleation rate parameterizations, denoted CH08 and HOO10 herein, both of which are based on classical-nucleation-theory and measurements, and use similar equations, but different parameters, to an empirical parameterization, denoted HAR13 herein, which considers implicitly the number of bacterial INP. All parameterizations were used to calculate the ice-nucleation probability offline. HAR13 and HOO10 were implemented and tested in a one-dimensional version of a weather-forecast-model in two meteorological cases. Ice-nucleation-probabilities based on HAR13 and CH08 were similar, in spite of their different derivation, and were higher than those based on HOO10. This study shows the importance of the method of parameterization and of the input variable, number of bacterial INP, for accurately assessing their role in meteorological and climatic processes.

  17. Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

    NASA Technical Reports Server (NTRS)

    Bhusal, L.; Freundlich, A.

    2007-01-01

    Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

  18. Study of surface passivation as a function of InP closed-ampoule solar cell fabrication processing variables

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Faur, Maria; Jenkins, Phillip; Goradia, Manju; Goradia, Chandra; Bailey, Sheila; Weinberg, Irving; Jayne, Douglas

    1990-01-01

    The effects of various surface preparation procedures, including chemical treatment and anodic or chemical oxidation, closed-ampoule diffusion conditions, and post-diffusion surface preparation and annealing conditions, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of n(+)p InP solar cells made by closed-ampoule diffusion of sulfur into p-type InP. The InP substrates used were p-type Cd-doped to a level of 1.7 x 10 to the 16th/cu cm, Zn-doped to levels of 2.2 x 10 to the 16th and 1.2 x 10 to the 18th/cu cm, and n-type S-doped to 4.4 x 10 to the 18th/cu cm. The passivating properties have been evaluated from photoluminescence (PL) and conductance-voltage (G-V) data. Good agreement was found between the level of surface passivation and the composition of different surface layers as revealed by X-ray photoelectron spectroscopy (XPS) analysis.

  19. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galiev, G. B., E-mail: galiev-galib@mail.ru; Grekhov, M. M.; Kitaeva, G. Kh.

    2017-03-15

    The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds thatmore » from similar layers formed on the (100) InP substrates by a factor of 3–5.« less

  20. Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

    NASA Astrophysics Data System (ADS)

    Chen, Guifeng; Wang, Mengxue; Yang, Wenxian; Tan, Ming; Wu, Yuanyuan; Dai, Pan; Huang, Yuyang; Lu, Shulong

    2017-12-01

    Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 °C for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50 μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high breakdown voltage of larger than 41 V (I < 10 μA). In addition, a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector. Project supported by the Key R&D Program of Jiangsu Province (No. BE2016085) , the National Natural Science Foundation of China (Nos. 61674051), and the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 121E32KYSB20160071).

  1. Microstructural and Compositional Relations of Granitoid Clasts in Lunar Breccias at the Micrometer to Sub-Micrometer Scale

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Simon, J. I.; Mills, R. D.; Ross, D. K.; Tappa, M.

    2015-01-01

    Lunar granitoid lithologies have long been of interest for the information they provide on processes leading to silicic melt compositions on the Moon. The extraction of such melts over time affects the distribution and budget of incompatible materials (i.e., radiogenic heat producing elements and volatiles) of the lunar interior. We have recently shown that in addition to their high concentrations of incompatible lithophile elements, some granitoid clasts in lunar breccias have significant indigenous water contents in their alkali feldspars. This raises the importance of lunar granitoid materials in the expanding search for mineralogic/petrologic hosts of indigenous lunar water-related species. We are undertaking a detailed survey of the petrologic/mineralogical relations of granitoid clasts in lunar breccias to achieve a better understanding of the potential of these diverse assemblages as hosts for volatiles, and as candidates for additional isotope chronology studies. Our preliminary results reported here based on high-resolution field-emission SEM, EPMA and TEM studies uncover immense complexity in these materials at the micrometer to sub-micrometer scale that heretofore have not been fully documented.

  2. Post deposition annealing effect on the properties of Al2O3/InP interface

    NASA Astrophysics Data System (ADS)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  3. Shipboard Measurements of 0.6328 Micrometer Laser Beam Extinction in the Marine Boundary Layer

    DTIC Science & Technology

    1976-06-01

    hdl.handle.net/10945/17938 Downloaded from NPS Archive: Calhoun SHIPBOARD MEASUREMENTS OF 0.6328 MICROMETER LASER BEAM EXTINCTION IN THE MARINE BOUNDARY LAYER P...W. Parish NAVAL POSTGRADUATE SCHOOL Monterey, California THESIS SHIPBOARD MEASUREMENTS OF 0.6328 MICROMETER LASER BEAM EXTINCTION IN THE MARINE...CLASSIFICATION OF THIS PtkGE(Wh»n Dmta Enffd) Shipboard Measurements of 0.6328 Micrometer Laser Beam Extinction in the Marine Boundary Layer by P. W

  4. InP tunnel junction for InGaAs/InP tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  5. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    NASA Astrophysics Data System (ADS)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  6. Operational training for the mission operations at the Brazilian National Institute for Space Research (INPE)

    NASA Technical Reports Server (NTRS)

    Rozenfeld, Pawel

    1993-01-01

    This paper describes the selection and training process of satellite controllers and data network operators performed at INPE's Satellite Tracking and Control Center in order to prepare them for the mission operations of the INPE's first (SCD1) satellite. An overview of the ground control system and SCD1 architecture and mission is given. Different training phases are described, taking into account that the applicants had no previous knowledge of space operations requiring, therefore, a training which started from the basics.

  7. Formation mechanisms for the dominant kinks with different angles in InP nanowires.

    PubMed

    Zhang, Minghuan; Wang, Fengyun; Wang, Chao; Wang, Yiqian; Yip, SenPo; Ho, Johnny C

    2014-01-01

    The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties.

  8. Formation mechanisms for the dominant kinks with different angles in InP nanowires

    PubMed Central

    2014-01-01

    The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties. PMID:24910572

  9. Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

    NASA Astrophysics Data System (ADS)

    Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

    2018-06-01

    Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 × 1011 to 5 × 1013 p cm‑2. It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

  10. Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

    PubMed

    Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

    2018-06-01

    Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

  11. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOEpatents

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  12. Highly doped InP as a low loss plasmonic material for mid-IR region.

    PubMed

    Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

    2016-12-12

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

  13. Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

    NASA Astrophysics Data System (ADS)

    Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

    2018-02-01

    Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR < ΔSO has to be taken into account in order to assign the numerical values. To solve this issue, polarization resolved micro-photoluminescence was performed on vertically aligned and untapered Wz InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

  14. High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

    PubMed

    Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

    2014-06-11

    The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

  15. High Temperature Mechanical Behavior of Polycrystalline Alumina from Mixed Nanometer and Micrometer Powders

    NASA Technical Reports Server (NTRS)

    Goldsby, Jon C.

    2001-01-01

    Sintered aluminum oxide materials were formed using commercial methods from mechanically mixed powders of nano-and micrometer alumina. The powders were consolidated at 1500 and 1600 C with 3.2 and 7.2 ksi applied stress in argon. The conventional micrometer sized powders failed to consolidate. While 100 percent nanometer-sized alumina and its mixture with the micrometer powders achieved less than 99 percent density. Preliminary high temperature creep behavior indicates no super-plastic strains. However high strains (less than 0.65 percent) were generated in the nanometer powder, due to cracks and linked voids initiated by cavitation.

  16. Far field emission profile of pure wurtzite InP nanowires

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bulgarini, Gabriele, E-mail: g.bulgarini@tudelft.nl; Reimer, Michael E.; Zwiller, Val

    2014-11-10

    We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to themore » nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.« less

  17. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

    NASA Technical Reports Server (NTRS)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

    1997-01-01

    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  18. One-step large-scale synthesis of micrometer-sized silver nanosheets by a template-free electrochemical method

    NASA Astrophysics Data System (ADS)

    Park, Sun Hwa; Son, Jin Gyeong; Lee, Tae Geol; Park, Hyun Min; Song, Jae Yong

    2013-05-01

    We have synthesized micrometer-sized Ag nanosheets via a facile, one-step, template-free electrochemical deposition in an ultra-dilute silver nitrate aqueous electrolyte. The nanosheet growth was revealed to occur in three stages: (1) formation of polygonal Ag nuclei on a substrate, (2) growth of {112}-faceted nanowire from the nuclei, and (3) anisotropic growth of (111)-planar nanosheets, approximately 20 to 50 nm in thickness and 10 μm in width, in the <112>-direction. The vertical growth of the facet nanowire was induced by the strong interface anisotropy between the deposit and electrolyte due to the ultra-dilute concentration of electrolyte and high reduction potential. The thickness of Ag nanosheets was controllable by the adjustment of the reduction/oxidation potential and frequency of the reverse-pulse potentiodynamic mode.

  19. A sensitive EUV Schwarzschild microscope for plasma studies with sub-micrometer resolution

    DOE PAGES

    Zastrau, U.; Rodel, C.; Nakatsutsumi, M.; ...

    2018-02-05

    We present an extreme ultraviolet (EUV) microscope using a Schwarzschild objective which is optimized for single-shot sub-micrometer imaging of laser-plasma targets. The microscope has been designed and constructed for imaging the scattering from an EUV-heated solid-density hydrogen jet. Here, imaging of a cryogenic hydrogen target was demonstrated using single pulses of the free-electron laser in Hamburg (FLASH) free-electron laser at a wavelength of 13.5 nm. In a single exposure, we observe a hydrogen jet with ice fragments with a spatial resolution in the sub-micrometer range. In situ EUV imaging is expected to enable novel experimental capabilities for warm dense mattermore » studies of micrometer-sized samples in laser-plasma experiments.« less

  20. A sensitive EUV Schwarzschild microscope for plasma studies with sub-micrometer resolution

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zastrau, U.; Rodel, C.; Nakatsutsumi, M.

    We present an extreme ultraviolet (EUV) microscope using a Schwarzschild objective which is optimized for single-shot sub-micrometer imaging of laser-plasma targets. The microscope has been designed and constructed for imaging the scattering from an EUV-heated solid-density hydrogen jet. Here, imaging of a cryogenic hydrogen target was demonstrated using single pulses of the free-electron laser in Hamburg (FLASH) free-electron laser at a wavelength of 13.5 nm. In a single exposure, we observe a hydrogen jet with ice fragments with a spatial resolution in the sub-micrometer range. In situ EUV imaging is expected to enable novel experimental capabilities for warm dense mattermore » studies of micrometer-sized samples in laser-plasma experiments.« less

  1. Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

    NASA Astrophysics Data System (ADS)

    De Luca, Marta; Polimeni, Antonio

    2017-12-01

    Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as building components of novel devices. The presence of wurtzite (WZ) phase in the lattice structure of non-nitride III-V NWs is one of the most surprising findings in these nanostructures: this phase, indeed, cannot be found in the same materials in the bulk form, where the zincblende (ZB) structure is ubiquitous, and therefore the WZ properties are poorly known. This review focuses on WZ InP NWs, because growth techniques have reached a high degree of control on the structural properties of this material, and optical studies performed on high-quality samples have allowed determining the most useful electronic properties, which are reviewed here. After an introduction summarizing the reasons for the interest in WZ InP nanowires (Sec. I), we give an overview on growth process and structural and optical properties of WZ InP NWs (Sec. II). In Sec. III, a complete picture of the energy and symmetry of the lowest-energy conduction and valence bands, as assessed by polarization-resolved photoluminescence (PL) and photoluminescence-excitation (PLE) studies is drawn and compared to all the available theoretical information. The elastic properties of WZ InP (determined by PL under hydrostatic pressure) and the radiative recombination dynamics of spatially direct and indirect (namely, occurring across the WZ/ZB interfaces) transitions are also discussed. Section IV, focuses on the magneto-optical studies of WZ InP NWs. The diagram of the energy levels of excitons in WZ materials—with and without magnetic field—is first provided. Then, all theoretical and experimental information available about the changes in the transport properties (i.e., carrier effective mass) caused by the ZB→WZ phase variation are reviewed. Different NW/magnetic field geometrical configurations, sensitive to polarization selection rules, highlight anisotropies in the diamagnetic shifts, Zeeman splitting

  2. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

    NASA Astrophysics Data System (ADS)

    Shi, Bei; Li, Qiang; Lau, Kei May

    2018-05-01

    Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

  3. Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites.

    PubMed

    Patzke, Greta R; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

    2012-12-27

    Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP-Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

  4. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  5. Micrometer scale spacings between fibronectin nanodots regulate cell morphology and focal adhesions

    NASA Astrophysics Data System (ADS)

    Horzum, Utku; Ozdil, Berrin; Pesen-Okvur, Devrim

    2014-04-01

    Cell adhesion to extracellular matrix is an important process for both health and disease states. Surface protein patterns that are topographically flat, and do not introduce other chemical, topographical or rigidity related functionality and, more importantly, that mimic the organization of the in vivo extracellular matrix are desired. Previous work showed that vinculin and cytoskeletal organization are modulated by size and shape of surface nanopatterns. However, quantitative analysis on cell morphology and focal adhesions as a function of micrometer scale spacings of FN nanopatterns was absent. Here, electron beam lithography was used to pattern fibronectin nanodots with micrometer scale spacings on a K-casein background on indium tin oxide coated glass which, unlike silicon, is transparent and thus suitable for many light microscopy techniques. Exposure times were significantly reduced using the line exposure mode with micrometer scale step sizes. Micrometer scale spacings of 2, 4 and 8 μm between fibronectin nanodots proved to modulate cell adhesion through modification of cell area, focal adhesion number, size and circularity. Overall, cell behavior was shown to shift at the apparent threshold of 4 μm spacing. The findings presented here offer exciting new opportunities for cell biology research.

  6. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    PubMed

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-04

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

  7. InP Devices For Millimeter-Wave Monolithic Circuits

    NASA Astrophysics Data System (ADS)

    Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

    1989-11-01

    High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

  8. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

  9. Growth factor of Fe-doped semi-insulating InP by LP-MOCVD

    NASA Astrophysics Data System (ADS)

    Yan, Xuejin; Zhu, Hongliang; Wang, Wei; Xu, Guoyang; Zhou, Fan; Ma, Chaohua; Wang, Xiaojie; Tian, Huijiang; Zhang, Jingyuan; Wu, Rong Han; Wang, Qiming

    1998-08-01

    The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semi-insulating InP material whose resistivity is equal to 2.0 X 108(Omega) *cm and the breakdown field is greater than 4.0 X 104Vcm-1 has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene [Fe(C5H5)2] flow constant at 620 degrees Celsius growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency, (eta) , is equal to 8.7 X 10-4 at 20 mbar growth pressure and 620 degrees Celsius growth temperature by the comparison of calculated and experimental results.

  10. Surface passivation of InP solar cells with InAlAs layers

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

    1993-01-01

    The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

  11. Formation of vacancy-impurity complexes in heavily Zn-doped InP

    NASA Astrophysics Data System (ADS)

    Slotte, J.; Saarinen, K.; Salmi, A.; Simula, S.; Aavikko, R.; Hautojärvi, P.

    2003-03-01

    Positron annihilation spectroscopy has been applied to observe the spontaneous formation of vacancy-type defects by annealing of heavily Zn-doped InP at 500 700 K. The defect is identified as the VP-Zn pair by detecting the annihilation of positrons with core electrons. We conclude that the defect is formed through a diffusion process; a phosphorus vacancy migrates until trapped by a Zn impurity and forms a negatively charged VP-Zn pair. The kinetics of the diffusion process is investigated by measuring the average positron lifetime as a function of annealing time and by fitting a diffusion model to the experimental results. We deduce a migration energy of 1.8±0.2 eV for the phosphorus vacancy. Our results explain both the presence of native VP-Zn pairs in Zn-doped InP and their disappearance in post-growth annealings.

  12. Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP. [organometallic vapor phase epitaxy

    NASA Technical Reports Server (NTRS)

    Larsen, C. A.; Buchan, N. I.; Stringfellow, G. B.

    1987-01-01

    The mechanism of PH3 decomposition was studied by using D2 as a carrier gas and analyzing the reaction products with a mass spectrometer. The effects of InP and silica surfaces were investigated. The only gaseous product below 600 C is H2. Since any gas-phase H atoms would produce HD, the reaction occurs entirely on the surface. The slow step is the unimolecular removal of the first hydrogen atom, with an activation energy of 36.0 kcal/mole on InP surfaces. The reaction on InP is first-order for PH3 concentrations as high as 15 percent, so the surface is not saturated at those conditions. When trimethylindium (TMIn) is added to the gas mixture, the mechanism changes dramatically, probably proceeding via an unstable intermediate adduct of TMIn and PH3 which eliminates CH4 upon formation. This concerted reaction lowers the pyrolysis temperatures of both PH3 and TMIn.

  13. Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

    NASA Astrophysics Data System (ADS)

    Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

    2017-04-01

    Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

  14. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

    PubMed

    Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

    2017-10-11

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

  15. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

    PubMed Central

    2017-01-01

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm–2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and

  16. The 2.5-12 micrometers spectrum of comet Halley from the IKS-VEGA experiment.

    PubMed

    Combes, M; Moroz, V I; Crovisier, J; Encrenaz, T; Bibring, J P; Grigoriev, A V; Sanko, N F; Coron, N; Crifo, J F; Gispert, R; Bockelée-Morvan, D; Nikolsky YuV; Krasnopolsky, V A; Owen, T; Emerich, C; Lamarre, J M; Rocard, F

    1988-01-01

    The infrared instrument IKS flown on board the VEGA space probes was designed for the detection of emission bands of parent molecules, and for a measurement of the size and temperature of the thermal emitting nuclear region. The instrument had three channels with cooled detectors: an "imaging channel" designed to modulate the signal of the nucleus and two spectroscopic channels operating at 2.5-5 and 6-12 micrometers, respectively, equipped with circular variable filters of resolving power approximately 50. This paper presents and discusses the results from the spectral channels. On VEGA 1, usable spectra were obtained at distances D from the comet nucleus ranging from 250,000 to 40,000 km corresponding to fields of view 4000 and 700 km in diameter, respectively. The important internal background signal caused by the instrument itself, which could not be cooled, had to be eliminated. Since no sky chopping was performed, we obtain difference spectra between the current spectrum and a reference spectrum with little or no cometary signal taken at the beginning of the observing sequence (D approximately 200,000 km). Final discrimination between cometary signal and instrumental background is achieved using their different time evolution, since the instrumental background is proportional to the slow temperature drift of the instrument, and the cometary signal due to parent molecules or dust grains is expected to vary in first order as D-1. The 2.5-5 micrometers IKS spectra definitely show strong narrow signals at 2.7 and 4.25 micrometers, attributed to the nu 3 vibrational bands of H2O and CO2, respectively, and a broader signal in the region 3.2-3.5 micrometers, which may be attributed to CH-bearing molecules. All these signals present the expected D-1 intensity variation. Weaker emission features at 3.6 and 4.7 micrometers could correspond to the nu 1 and nu 5 bands of H2CO and the (1 - 0) band of CO, respectively. Molecular production rates are derived from the

  17. 2 Micrometers InAsSb Quantum-dot Lasers

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Uhl, David; Keo, Sam

    2004-01-01

    InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

  18. Simple intrinsic defects in GaP and InP

    NASA Astrophysics Data System (ADS)

    Schultz, Peter A.

    2012-02-01

    To faithfully simulate evolution of defect chemistry and electrical response in irradiated semiconductor devices requires accurate defect reaction energies and energy levels. In III-Vs, good data is scarce, theory hampered by band gap and supercell problems. I apply density functional theory (DFT) to intrinsic defects in GaP and InP, predicting stable charge states, ground state configurations, defect energy levels, and identifying mobile species. The SeqQuest calculations incorporate rigorous charge boundary conditions removing supercell artifacts, demonstrated converged to the infinite limit. Computed defect levels are not limited by a band gap problem, despite Kohn-Sham gaps much smaller than the experimental gap. As in GaAs, [P.A. Schultz and O.A. von Lilienfeld, Modeling Simul. Mater. Sci. Eng. 17, 084007 (2009)], defects in GaP and InP exhibit great complexity---multitudes of charge states, bistabilities, and negative U systems---but show similarities to each other (and to GaAs). Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  19. Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

    NASA Astrophysics Data System (ADS)

    Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

    2018-04-01

    We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

  20. Improving INPE'S balloon ground facilities for operation of the protoMIRAX experiment

    NASA Astrophysics Data System (ADS)

    Mattiello-Francisco, F.; Rinke, E.; Fernandes, J. O.; Cardoso, L.; Cardoso, P.; Braga, J.

    2014-10-01

    The system requirements for reusing the scientific balloon ground facilities available at INPE were a challenge to the ground system engineers involved in the protoMIRAX X-ray astronomy experiment. A significant effort on software updating was required for the balloon ground station. Considering that protoMIRAX is a pathfinder for the MIRAX satellite mission, a ground infrastructure compatible with INPE's satellite operation approach would be useful and highly recommended to control and monitor the experiment during the balloon flights. This approach will make use of the SATellite Control System (SATCS), a software-based architecture developed at INPE for satellite commanding and monitoring. SATCS complies with particular operational requirements of different satellites by using several customized object-oriented software elements and frameworks. We present the ground solution designed for protoMIRAX operation, the Control and Reception System (CRS). A new server computer, properly configured with Ethernet, has extended the existing ground station facilities with switch, converters and new software (OPS/SERVER) in order to support the available uplink and downlink channels being mapped to TCP/IP gateways required by SATCS. Currently, the CRS development is customizing the SATCS for the kernel functions of protoMIRAX command and telemetry processing. Design-patterns, component-based libraries and metadata are widely used in the SATCS in order to extend the frameworks to address the Packet Utilization Standard (PUS) for ground-balloon communication, in compliance with the services provided by the data handling computer onboard the protoMIRAX balloon.

  1. Minority-carrier lifetime in InP as a function of light bias

    NASA Technical Reports Server (NTRS)

    Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

    1995-01-01

    Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

  2. TP53INP2/DOR, a mediator of cell autophagy, promotes rDNA transcription via facilitating the assembly of the POLR1/RNA polymerase I preinitiation complex at rDNA promoters.

    PubMed

    Xu, Yinfeng; Wan, Wei; Shou, Xin; Huang, Rui; You, Zhiyuan; Shou, Yanhong; Wang, Lingling; Zhou, Tianhua; Liu, Wei

    2016-07-02

    Cells control their metabolism through modulating the anabolic and catabolic pathways. TP53INP2/DOR (tumor protein p53 inducible nuclear protein 2), participates in cell catabolism by serving as a promoter of autophagy. Here we uncover a novel function of TP53INP2 in protein synthesis, a major biosynthetic and energy-consuming anabolic process. TP53INP2 localizes to the nucleolus through its nucleolar localization signal (NoLS) located at the C-terminal domain. Chromatin immunoprecipitation (ChIP) assays detected an association of TP53INP2 with the ribosomal DNA (rDNA), when exclusion of TP53INP2 from the nucleolus repressed rDNA promoter activity and the production of ribosomal RNA (rRNA) and proteins. The removal of TP53INP2 also impaired the association of the POLR1/RNA polymerase I preinitiation complex (PIC) with rDNA. Further, TP53INP2 interacts directly with POLR1 PIC, and is required for the assembly of the complex. These data indicate that TP53INP2 promotes ribosome biogenesis through facilitating rRNA synthesis at the nucleolus, suggesting a dual role of TP53INP2 in cell metabolism, assisting anabolism on the nucleolus, and stimulating catabolism off the nucleolus.

  3. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    PubMed

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  4. Synthesis and properties of ultra-long InP nanowires on glass.

    PubMed

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-16

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  5. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

    PubMed

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

    2016-12-01

    We report the growth of vertical <111>-oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

  6. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

    PubMed

    Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

    2016-10-12

    The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

  7. Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

    PubMed Central

    Patzke, Greta R.; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

    2012-01-01

    Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H2O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP–Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics. PMID:28809296

  8. Progress in p(+)n InP solar cells fabricated by thermal diffusion

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.; Weinberg, I.; Vargas, C.; Faur, Mircea; Faur, Maria; Goradia, C.; Goradia, M.; Fatemi, N. S.

    1993-01-01

    The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.

  9. Investigation of the charging characteristics of micrometer sized droplets based on parallel plate capacitor model.

    PubMed

    Zhang, Yanzhen; Liu, Yonghong; Wang, Xiaolong; Shen, Yang; Ji, Renjie; Cai, Baoping

    2013-02-05

    The charging characteristics of micrometer sized aqueous droplets have attracted more and more attentions due to the development of the microfluidics technology since the electrophoretic motion of a charged droplet can be used as the droplet actuation method. This work proposed a novel method of investigating the charging characteristics of micrometer sized aqueous droplets based on parallel plate capacitor model. With this method, the effects of the electric field strength, electrolyte concentration, and ion species on the charging characteristics of the aqueous droplets was investigated. Experimental results showed that the charging characteristics of micrometer sized droplets can be investigated by this method.

  10. An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yamamoto, Norio; Uwai, Kunihiko; Takahei, Kenichiro

    1989-04-01

    Deep levels in high-purity InP crystal grown by metalorganic chemical vapor deposition (MOCVD) have been measured by deep level transient spectroscopy. While no electron traps are observed in the samples grown at 600 °C with a [PH3]/[In(C2H5)3] of 170, three electron traps with activation energies of 0.80, 0.44, and 0.24 eV were observed in the samples grown at 500 °C with the same [PH3]/[In(C2H5)3]. The 0.44-eV trap, whose capture cross section is 1.5×10-18 cm2, observed at a low [PH3]/[In(C2H5)3] shows a decrease in concentration as [PH3]/[In(C2H5)3] is increased, and becomes less than 5×1012 cm-3 at a [PH3]/[In(C2H5)3] of more than 170. The comparison of annealing behavior of this trap in MOCVD InP and that in liquid-encapsulated Czochralski InP suggests that the 0.44-eV trap is related to a complex formed from residual impurities and native defects related to a phosphorus deficiency such as phosphorus vacancies or indium interstitials. This trap is found to show configurational bistability similar to that observed for the trap in an Fe-doped InP, MFe center.

  11. A portable spectrometer for use from 5 to 15 micrometers

    NASA Technical Reports Server (NTRS)

    Hoover, G.; Kahle, A. B.

    1986-01-01

    A field portable spectrometer suitable for collecting data relevant to remote sensing applications in the 8 to 12 micrometer atmospheric window has been built at the Jet Propulsion Laboratory. The instrument employs a single cooled HgCdTe detector and a continuously variable filter wheel analyzer. The spectral range covered is 5 to 14.5 micrometers and the resolution is approximately 1.5 percent of the wavelength. A description of the hardware is followed by a discussion of the analysis of the spectral data leading to finished emissivity and radiance spectra. A section is devoted to the evaluation of the instrument performance with respect to spectral resolution, radiometric precision, and accuracy. Several examples of spectra acquired in the field are included.

  12. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

    NASA Astrophysics Data System (ADS)

    Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

    2015-02-01

    We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

  13. The Horizontal Ice Nucleation Chamber (HINC): INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

    NASA Astrophysics Data System (ADS)

    Lacher, Larissa; Lohmann, Ulrike; Boose, Yvonne; Zipori, Assaf; Herrmann, Erik; Bukowiecki, Nicolas; Steinbacher, Martin; Kanji, Zamin A.

    2017-12-01

    In this work we describe the Horizontal Ice Nucleation Chamber (HINC) as a new instrument to measure ambient ice-nucleating particle (INP) concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T) and relative humidity (RH) in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw) of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi) of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l. ) to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %), relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 %) to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L-1; normalized to standard T of 273 K and pressure, p, of 1013 hPa) and 4.7 std L-1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC) of 2.2 std L-1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L-1 was measured during an event influenced by marine air, arriving at the JFJ from the North Sea and the Norwegian Sea. The contribution from anthropogenic or other

  14. Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Goradia, C.; Fatemi, N. S.; Jenkins, P. P.; Wilt, D. M.; Bailey, S.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  15. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fu, Dong; Zhu, Xi; Li, Jian

    2015-05-28

    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arrangedmore » InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.« less

  16. Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

    PubMed

    Gnaser, Hubert; Radny, Tobias

    2015-12-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

  17. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    PubMed

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  18. Draft Genome Sequence of Aeromonas caviae Strain 429865 INP, Isolated from a Mexican Patient

    PubMed Central

    Padilla, Juan Carlos A.; Bustos, Patricia; Sánchez-Varela, Alejandro; Palma-Martinez, Ingrid; Arzate-Barbosa, Patricia; García-Pérez, Carlos A.; López-López, María de Jesús; González, Víctor

    2015-01-01

    Aeromonas caviae is an emerging human pathogen. Here, we report the draft genome sequence of Aeromonas caviae strain 429865 INP which shows the presence of various putative virulence-related genes. PMID:26494682

  19. Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

    NASA Technical Reports Server (NTRS)

    Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

    1990-01-01

    Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

  20. Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

    NASA Astrophysics Data System (ADS)

    Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

    Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

  1. Kinetic effects in InP nanowire growth and stacking fault formation: the role of interface roughening.

    PubMed

    Chiaramonte, Thalita; Tizei, Luiz H G; Ugarte, Daniel; Cotta, Mônica A

    2011-05-11

    InP nanowire polytypic growth was thoroughly studied using electron microscopy techniques as a function of the In precursor flow. The dominant InP crystal structure is wurtzite, and growth parameters determine the density of stacking faults (SF) and zinc blende segments along the nanowires (NWs). Our results show that SF formation in InP NWs cannot be univocally attributed to the droplet supersaturation, if we assume this variable to be proportional to the ex situ In atomic concentration at the catalyst particle. An imbalance between this concentration and the axial growth rate was detected for growth conditions associated with larger SF densities along the NWs, suggesting a different route of precursor incorporation at the triple phase line in that case. The formation of SFs can be further enhanced by varying the In supply during growth and is suppressed for small diameter NWs grown under the same conditions. We attribute the observed behaviors to kinetically driven roughening of the semiconductor/metal interface. The consequent deformation of the triple phase line increases the probability of a phase change at the growth interface in an effort to reach local minima of system interface and surface energy.

  2. Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

    1989-01-01

    Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

  3. High resolution electrolyte for thinning InP by anodic dissolution and its applications to EC-V profiling, defect revealing and surface passivation

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Weinberg, Irving; Goradia, Manju; Vargas, Carlos

    1991-01-01

    An extensive experimental study was conducted using various electrolytes in an effort to find an appropriate electrolyte for anodic dissolution of InP. From the analysis of electrochemical characteristics in the dark and under different illumination levels, x ray photoelectron spectroscopy and SEM/Nomarski inspection of the surfaces, it was determined that the anodic dissolution of InP front surface layers by FAP electrolyte is a very good choice for rendering smooth surfaces, free of oxides and contaminants and with good electrical characteristics. The FAP electrolyte, based on HF, CH3COOH, and H2O2 appears to be inherently superior to previously reported electrolytes for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/sq cm. It can also be used for accurate electrochemical revealing of either precipitates or dislocation density with application to EPD mapping as a function of depth, and for defect revealing of multilayer InP structures at any depth and/or at the interfaces.

  4. Oxygen reduction reaction properties of nitrogen-incorporated nanographenes synthesized using in-liquid plasma from mixture of ethanol and iron phthalocyanine

    NASA Astrophysics Data System (ADS)

    Amano, Tomoki; Kondo, Hiroki; Takeda, Keigo; Ishikawa, Kenji; Hiramatsu, Mineo; Sekine, Makoto; Hori, Masaru

    2018-04-01

    Nanographenes were synthesized using in-liquid plasma from a mixture of iron phthalocyanine and ethanol. In a previous study, micrometer-scale flakes with nitrogen incorporation were obtained. A nonprecious metal catalytic activity was observed with 3.13 electrons in an oxygen reduction reaction under an acidic solute condition. Large-surface-area, high-graphene-crystallinity, and iron-carbon-bonding sites were found owing to a high catalytic activity in Fe-N/nanographene.

  5. AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+ and H+ ions bombardment.

    NASA Astrophysics Data System (ADS)

    Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Abidri, B.

    2012-06-01

    Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have been performed in order to investigate the InP(100) surface subjected to ions bombardment. The InP(100) surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV) indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  6. Annealing of irradiated n+p InP buried homojunctions

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

    1994-01-01

    At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

  7. Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

    NASA Astrophysics Data System (ADS)

    Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

    2018-05-01

    The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and β has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of β.

  8. Status of diffused junction p+n InP solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  9. Status of diffused junction p+n InP solar cells for space applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Faur, M.; Goradia, C.; Faur, M.

    1994-09-01

    Recently, the authors have succeeded in fabricating diffused junction p{sup +}n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V{sub OC}) of 887.6 mV, which, to the best of their knowledge, is higher than previously reported V{sub OC} values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating andmore » emitter thickness. This paper summarizes recent advances in the technology of fabrication of p{sup +}n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p{sup +} InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.« less

  10. Electrodeposition of CdSe on GaAs and InP substrates

    NASA Astrophysics Data System (ADS)

    Etcheberry, A.; Cachet, H.; Cortes, R.; Froment, M.

    2001-06-01

    Epitaxial CdSe layers have been electrodeposited on the (1 0 0) and ( 1¯ 1¯ 1¯) faces of GaAs and InP single crystals. Chemical composition and crystalline quality of CdSe have been studied by X-photoelectron spectroscopy, reflection high energy electron diffraction and X-ray diffraction. Influence of the substrate has been pointed out.

  11. New connecting elements for cascade photoelectric converters based on InP

    NASA Astrophysics Data System (ADS)

    Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

    2018-03-01

    In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

  12. Wideband 1.064 micrometer detector evaluation. [for application to space laser communication systems

    NASA Technical Reports Server (NTRS)

    Green, S. I.

    1977-01-01

    Several types of communications detectors for use in a 400 Mbps 1.064 micrometer laser communication system were evaluated and characterized. The communication system Bit Error Rate (BER) performance was measured, and test results for the best detector of each type are summarized. The complete BER curves are presented. The 400 Mbps 1.064 micrometer communication system receiver test bed is described. The best performance levels which can be achieved by focusing the signal to diffraction limited spots on the photosensitive area are cited.

  13. Dopant Segregation in Earth- and Space-Grown InP Crystals

    NASA Astrophysics Data System (ADS)

    Danilewsky, Andreas Nikolaus; Okamoto, Yusuke; Benz, Klaus Werner; Nishinaga, Tatau

    1992-07-01

    Macro- and microsegregation of sulphur in InP crystals grown from In solution by the travelling heater method under microgravity and normal gravity are analyzed using spatially resolved photoluminescence. Whereas the macrosegregation in earth- as well as space-grown crystals is explained by conventional steady-state models based on the theory of Burton, Prim and Slichter (BPS), the microsegregation can only be understood in terms of the non-steady-state step exchange model.

  14. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  15. Electrolyte for EC-V profiling of InP and GaAs based structures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Faur, M.; Faur, M.; Goradia, M.

    Electrochemical C-V (EC-V) profiling is the most often used and convenient method for accurate majority carrier concentration depth profiling of semiconductors. Although, according to the authors, FAP is the best electrolyte for accurate profiling of InP structures, it does not work well with other III-V compounds. To overcome this, recently, the authors have developed a new electrolyte, which they call UNIEL (UNIversal ELectrolyte), which works well with all the materials. However, as with the FAP electrolyte, the presence of HF makes the UNIEL incompatible with the electrochemical cell of Polaron EC-V profilers manufactured by BIO-RAD. By slightly modifying the electrochemicalmore » cell configuration the authors are able to use both the FAP and UNIEL electrolytes, without destroying the calomel electrode. Recently, they have, nevertheless, experimented with variations of the UNIEL with no HF content for EC-V profiling of structures based on InP and GaAs. Presently available results are presented here.« less

  16. Thermoelectric properties of Si/CoSi2 sub-micrometer composites prepared by melt-spinning technique

    NASA Astrophysics Data System (ADS)

    Xie, Jun; Ohishi, Yuji; Ichikawa, Satoshi; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke

    2017-05-01

    We here report on the influence of CoSi2 precipitates on the thermoelectric properties of heavily doped p-type Si. A simple self-assembly process using a melt-spinning technique followed by spark plasma sintering is introduced to prepare bulk Si/CoSi2 composites with a nominal composition of (Si0.99B0.01)95Co5. Scanning and transmission electron microscopy observations present clear evidence of a sub-micrometer CoSi2 phase with a size ranging from 50 to 500 nm. These sub-micrometer precipitates resulted in a retention of the high electrical performance of heavily doped Si, while simultaneously reducing thermal conductivity by over 20% compared to a coarse CoSi2 phase (1-10 μm) in a comparative sample prepared by arc melting and spark plasma sintering. As a result, a figure of merit ZT value of 0.21 at 1073 K was achieved in the sub-micrometer Si/CoSi2, an increase of 16% compared with the ZT value for homogeneous p-type Si with a similar carrier concentration. This suggests that the self-assembled sub-micrometer inclusions effectively enhanced the thermoelectric performance of Si-based thermoelectric materials.

  17. Acid dissolution experiments - Carbonates and the 6.8-micrometer bands in interplanetary dust particles

    NASA Technical Reports Server (NTRS)

    Sandford, S. A.

    1986-01-01

    A chemical dissolution experiment on an interplanetary dust particle (IDP) showed that carbonates, not acid-insoluble organic compounds, were responsible for virtually all the absorption at 6.8 micrometers seen in the infrared spectra of this particle. The IDP examined had an infrared spectrum characteristic of layer-lattice silicates and belongs to a class of IDP's whose spectra resemble those of protostellar objects like W33 A, which also exhibit a band at 6.8 micrometers.

  18. Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvy, M.

    1998-01-01

    We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

  19. Additive Manufacturing of Metal Structures at the Micrometer Scale.

    PubMed

    Hirt, Luca; Reiser, Alain; Spolenak, Ralph; Zambelli, Tomaso

    2017-05-01

    Currently, the focus of additive manufacturing (AM) is shifting from simple prototyping to actual production. One driving factor of this process is the ability of AM to build geometries that are not accessible by subtractive fabrication techniques. While these techniques often call for a geometry that is easiest to manufacture, AM enables the geometry required for best performance to be built by freeing the design process from restrictions imposed by traditional machining. At the micrometer scale, the design limitations of standard fabrication techniques are even more severe. Microscale AM thus holds great potential, as confirmed by the rapid success of commercial micro-stereolithography tools as an enabling technology for a broad range of scientific applications. For metals, however, there is still no established AM solution at small scales. To tackle the limited resolution of standard metal AM methods (a few tens of micrometers at best), various new techniques aimed at the micrometer scale and below are presently under development. Here, we review these recent efforts. Specifically, we feature the techniques of direct ink writing, electrohydrodynamic printing, laser-assisted electrophoretic deposition, laser-induced forward transfer, local electroplating methods, laser-induced photoreduction and focused electron or ion beam induced deposition. Although these methods have proven to facilitate the AM of metals with feature sizes in the range of 0.1-10 µm, they are still in a prototype stage and their potential is not fully explored yet. For instance, comprehensive studies of material availability and material properties are often lacking, yet compulsory for actual applications. We address these items while critically discussing and comparing the potential of current microscale metal AM techniques. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Efficient Single-Frequency Thulium Doped Fiber Laser Near 2-micrometers

    NASA Technical Reports Server (NTRS)

    Geng, Jihong; Wu, Jianfeng; Jiang, Shibin; Yu, Jirong

    2007-01-01

    We demonstrate highly efficient diode-pumped single-frequency fiber laser with 35% slope efficiency and 50mW output power operating near 2 micrometers, which generated from a 2-cm long piece of highly Tm(3+)-doped germanate glass fiber pumped at 800nm.

  1. High-Energy 2-Micrometers Doppler Lidar for Wind Measurements

    NASA Technical Reports Server (NTRS)

    Koch, Grady J.; Beyon, Jeffrey Y.; Barnes, Bruce W.; Petros, Mulugeta; Yu, Jirong; Amzajerdian, Farzin; Kavaya, Michael J.; Singh, Upendra N.

    2006-01-01

    High-energy 2-micrometer wavelength lasers have been incorporated in a prototype coherent Doppler lidar to test component technologies and explore applications for remote sensing of the atmosphere. Design of the lidar is presented including aspects in the laser transmitter, receiver, photodetector, and signal processing. Calibration tests and sample atmospheric data are presented on wind and aerosol profiling.

  2. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  3. Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures

    NASA Astrophysics Data System (ADS)

    Granger, G.; Kam, A.; Studenikin, S. A.; Sachrajda, A. S.; Aers, G. C.; Williams, R. L.; Poole, P. J.

    2010-09-01

    The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.

  4. Ferroelectric behavior of Al substituted InP

    NASA Astrophysics Data System (ADS)

    Park, C. S.; Lee, S. J.; Kang, T. W.; Fu, D. J.

    2006-12-01

    InP:Al was grown by the liquid phase epitaxy method on InP (100)substrates. X-ray diffraction confirmed the epitaxial growth along (100) of AlInP. Photoluminescence spectra showed the evident effect of Al content. Ferroelectric characterization of the sample revealed a clear hysteresis in its polarization-voltage curves. The remnant polarization of InP:Al amounts to 1.99μC/cm2 at 300Hz, and it decreases with increasing temperature in a continuous and diffusive manner. Resistance measurement demonstrated a maximum resistance at 160°C, tentatively consistent with the transition temperature of remnant polarization. The ferroelectricity is accounted by the collective interaction between nuclei having the microscopic instability from the cation size difference in InP:Al.

  5. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

    1993-01-01

    Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

  6. Modeling thermal infrared (2-14 micrometer) reflectance spectra of frost and snow

    NASA Technical Reports Server (NTRS)

    Wald, Andrew E.

    1994-01-01

    Existing theories of radiative transfer in close-packed media assume that each particle scatters independently of its neighbors. For opaque particles, such as are common in the thermal infrared, this assumption is not valid, and these radiative transfer theories will not be accurate. A new method is proposed, called 'diffraction subtraction', which modifies the scattering cross section of close-packed large, opaque spheres to account for the effect of close packing on the diffraction cross section of a scattering particle. This method predicts the thermal infrared reflectance of coarse (greater than 50 micrometers radius), disaggregated granular snow. However, such coarse snow is typically old and metamorphosed, with adjacent grains welded together. The reflectance of such a welded block can be described as partly Fresnel in nature and cannot be predicted using Mie inputs to radiative transfer theory. Owing to the high absorption coefficient of ice in the thermal infrared, a rough surface reflectance model can be used to calculate reflectance from such a block. For very small (less than 50 micrometers), disaggregated particles, it is incorrect in principle to treat diffraction independently of reflection and refraction, and the theory fails. However, for particles larger than 50 micrometers, independent scattering is a valid assumption, and standard radiative transfer theory works.

  7. Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

    NASA Astrophysics Data System (ADS)

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2018-01-01

    Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

  8. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mannarino, Manuel, E-mail: manuel.mannarino@imec.be, E-mail: manuelmannarino@gmail.com; Chintala, Ravi; Vandervorst, Wilfried

    2015-12-14

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III–V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III–V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of differentmore » chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.« less

  9. Optimized efficiency in InP nanowire solar cells with accurate 1D analysis.

    PubMed

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2018-01-26

    Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s -1 , corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

  10. Infrared spectroscopic ellipsometry of micrometer-sized SiO2 line gratings

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Zellmeier, Matthias; Rappich, Jörg; Ketelsen, Helge; Hinrichs, Karsten

    2017-09-01

    For the design and process control of periodic nano-structured surfaces spectroscopic ellipsometry is already established in the UV-VIS spectral regime. The objective of this work is to show the feasibility of spectroscopic ellipsometry in the infrared, exemplarily, on micrometer-sized SiO2 line gratings grown on silicon wafers. The grating period ranges from 10 to about 34 μm. The IR-ellipsometric spectra of the gratings exhibit complex changes with structure variations. Especially in the spectral range of the oxide stretching modes, the presence of a Rayleigh singularity can lead to pronounced changes of the spectrum with the sample geometry. The IR-ellipsometric spectra of the gratings are well reproducible by calculations with the RCWA method (Rigorous Coupled Wave Analysis). Therefore, infrared spectroscopic ellipsometry allows the quantitative characterization and process control of micrometer-sized structures.

  11. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    PubMed

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  12. W-Band InP Wideband MMIC LNA with 30K Noise Temperature

    NASA Technical Reports Server (NTRS)

    Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

    2000-01-01

    This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

  13. Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

    NASA Astrophysics Data System (ADS)

    Olsson, F.; Xie, M.; Lourdudoss, S.; Prieto, I.; Postigo, P. A.

    2008-11-01

    We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.

  14. Biological constraints limit the use of rapamycin-inducible FKBP12-Inp54p for depleting PIP2 in dorsal root ganglia neurons.

    PubMed

    Coutinho-Budd, Jaeda C; Snider, Samuel B; Fitzpatrick, Brendan J; Rittiner, Joseph E; Zylka, Mark J

    2013-09-08

    Rapamycin-induced translocation systems can be used to manipulate biological processes with precise temporal control. These systems are based on rapamycin-induced dimerization of FK506 Binding Protein 12 (FKBP12) with the FKBP Rapamycin Binding (FRB) domain of mammalian target of rapamycin (mTOR). Here, we sought to adapt a rapamycin-inducible phosphatidylinositol 4,5-bisphosphate (PIP2)-specific phosphatase (Inp54p) system to deplete PIP2 in nociceptive dorsal root ganglia (DRG) neurons. We genetically targeted membrane-tethered CFP-FRBPLF (a destabilized FRB mutant) to the ubiquitously expressed Rosa26 locus, generating a Rosa26-FRBPLF knockin mouse. In a second knockin mouse line, we targeted Venus-FKBP12-Inp54p to the Calcitonin gene-related peptide-alpha (CGRPα) locus. We hypothesized that after intercrossing these mice, rapamycin treatment would induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in CGRP+ DRG neurons. In control experiments with cell lines, rapamycin induced translocation of Venus-FKBP12-Inp54p to the plasma membrane, and subsequent depletion of PIP2, as measured with a PIP2 biosensor. However, rapamycin did not induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in FRBPLF-expressing DRG neurons (in vitro or in vivo). Moreover, rapamycin treatment did not alter PIP2-dependent thermosensation in vivo. Instead, rapamycin treatment stabilized FRBPLF in cultured DRG neurons, suggesting that rapamycin promoted dimerization of FRBPLF with endogenous FKBP12. Taken together, our data indicate that these knockin mice cannot be used to inducibly deplete PIP2 in DRG neurons. Moreover, our data suggest that high levels of endogenous FKBP12 could compete for binding to FRBPLF, hence limiting the use of rapamycin-inducible systems to cells with low levels of endogenous FKBP12.

  15. Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Goradia, Manju; Goradia, Chandra; Jenkins, Phillip; Jayne, Douglas; Weinberg, Irving

    1991-01-01

    Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.

  16. Color lensless digital holographic microscopy with micrometer resolution.

    PubMed

    Garcia-Sucerquia, Jorge

    2012-05-15

    Color digital lensless holographic microscopy with micrometer resolution is presented. Multiwavelength illumination of a biological sample and a posteriori color composition of the amplitude images individually reconstructed are used to obtain full-color representation of the microscopic specimen. To match the sizes of the reconstructed holograms for each wavelength, a reconstruction algorithm that allows for choosing the pixel size at the reconstruction plane independently of the wavelength and the reconstruction distance is used. The method is illustrated with experimental results.

  17. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1

    PubMed Central

    Reeder, Sarah H.; Lee, Byung Ha; Fox, Ronald; Dobritsa, Anna A.

    2016-01-01

    Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures–openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores–the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them. PMID:27177036

  18. Dynamics of the cascade capture of electrons by charged donors in GaAs and InP

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aleshkin, V. Ya., E-mail: aleshkin@ipmras.ru; Gavrilenko, L. V.

    2016-08-15

    The times for the cascade capture of an electron by a charged impurity have been calculated for pulsed and stationary excitations of impurity photoconductivity in GaAs and InP. The characteristic capture times under pulsed and continuous excitations are shown to differ noticeably both from each other and from the value given by the Abakumov–Perel–Yassievich formula for a charged impurity concentration greater than 10{sup 10} cm{sup –3}. The cause of this difference has been established. The Abakumov–Perel–Yassievich formula for the cascade capture cross section in the case of stationary excitation has been generalized. The dependences of the cascade capture rate onmore » the charged impurity concentration in GaAs and InP have been found for three temperatures in the case of pulsed excitation.« less

  19. Minority carrier diffusion length and edge surface-recombination velocity in InP

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Bailey, Sheila G.

    1993-01-01

    A scanning electron microscope was used to obtain the electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure the edge surface-recombination velocity. These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (Donolato, 1982) to obtain the electron (minority carrier) diffusion length.

  20. Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Stockman, S. A.; Fresina, M. T.; Hartmann, Q. J.; Hanson, A. W.; Gardner, N. F.; Baker, J. E.; Stillman, G. E.

    1994-04-01

    The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3 by low-pressure metalorganic chemical vapor deposition. n-type conduction is observed with electron concentrations as high as 1×1018 cm-3, and the electrical activation efficiency is 5%-15%. Carbon incorporation is found to be highly dependent on substrate temperature, suggesting that the rate-limiting step is desorption of CHy (0≤y≤3) from the surface during growth. Hydrogen is also incorporated in the layers during growth. The electron mobilities are lower for C-doped InP than for Si-doped InP. InP/InGaAs heterojunction bipolar transistors with C as the p-type base dopant and either Si or C as the n-type emitter dopant have been fabricated and compared. Devices with a carbon-doped base and emitter showed degraded performance, likely as a result of deep levels incorporated during growth of the emitter.

  1. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

    PubMed

    Cavalli, Alessandro; Wang, Jia; Esmaeil Zadeh, Iman; Reimer, Michael E; Verheijen, Marcel A; Soini, Martin; Plissard, Sebastien R; Zwiller, Val; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-05-11

    Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.

  2. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

    2017-11-01

    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm2. At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  3. Growth of SiO 2 on InP substrate by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lei, Po Hsun; Yang, Chyi Da

    2010-04-01

    We have grown silicon dioxide (SiO 2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO 2 saturated hydrofluorosilicic acid (H 2SiF 6), 0.1 M boric acid (H 3BO 3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO 2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO 2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H 2O 2) that can regulate the concentration of OH - ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO 2 saturated H 2SiF 6 in treatment solution.

  4. Sulfur as a surface passivation for InP

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Chang, R. R.; Lile, D. L.

    1988-01-01

    The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

  5. Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Noda, T.; Mano, T.; Jo, M.

    We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs.

  6. Correlation of electron and proton irradiation-induced damage in InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.; Burke, Edward A.

    1995-01-01

    When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.

  7. Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

  8. Modal Filters for Infrared Interferometry

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander; MacDonald, Daniel R.; Soibel, Alexander

    2009-01-01

    Modal filters in the approximately equal to 10-micrometer spectral range have been implemented as planar dielectric waveguides in infrared interferometric applications such as searching for Earth-like planets. When looking for a small, dim object ("Earth") in close proximity to a large, bright object ("Sun"), the interferometric technique uses beams from two telescopes combined with a 180 phase shift in order to cancel the light from a brighter object. The interferometer baseline can be adjusted so that, at the same time, the light from the dimmer object arrives at the combiner in phase. This light can be detected and its infrared (IR) optical spectra can be studied. The cancellation of light from the "Sun" to approximately equal to 10(exp 6) is required; this is not possible without special devices-modal filters- that equalize the wavefronts arriving from the two telescopes. Currently, modal filters in the approximately equal to 10-micrometer spectral range are implemented as single- mode fibers. Using semiconductor technology, single-mode waveguides for use as modal filters were fabricated. Two designs were implemented: one using an InGaAs waveguide layer matched to an InP substrate, and one using InAlAs matched to an InP substrate. Photon Design software was used to design the waveguides, with the main feature all designs being single-mode operation in the 10.5- to 17-micrometer spectral range. Preliminary results show that the filter's rejection ratio is 26 dB.

  9. InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

    NASA Astrophysics Data System (ADS)

    Jin, Shirong; John Sweeney, Stephen

    2013-12-01

    We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3-0.8 eV (1.5-4 μm) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (ΔSO) is large and controllable and can, for example, be made larger than the band gap (Eg) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

  10. A meteorological distribution system for high-resolution terrestrial modeling (MicroMet)

    Treesearch

    Glen E. Liston; Kelly Elder

    2006-01-01

    An intermediate-complexity, quasi-physically based, meteorological model (MicroMet) has been developed to produce high-resolution (e.g., 30-m to 1-km horizontal grid increment) atmospheric forcings required to run spatially distributed terrestrial models over a wide variety of landscapes. The following eight variables, required to run most terrestrial models, are...

  11. Anomalous photoluminescence in InP1−xBix

    PubMed Central

    Wu, Xiaoyan; Chen, Xiren; Pan, Wenwu; Wang, Peng; Zhang, Liyao; Li, Yaoyao; Wang, Hailong; Wang, Kai; Shao, Jun; Wang, Shumin

    2016-01-01

    Low temperature photoluminescence (PL) from InP1−xBix thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT). PMID:27291823

  12. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

    1997-07-01

    Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

  13. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    PubMed Central

    2011-01-01

    Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content. PMID:21711912

  14. 2-micrometer continuous wave laser treatment for multiple non-muscle-invasive bladder cancer with intravesical instillation of epirubicin.

    PubMed

    Liu, Haitao; Xue, Song; Ruan, Yuan; Sun, Xiaowen; Han, Bangmin; Xia, Shujie

    2011-01-01

    We have reported the efficacy and safety of 2-micrometer continuous wave laser resection of non-muscle-invasive bladder tumor (NMIVBC) (World J Urology 2010;28:157-161). In this study, we evaluated the use of 2-micrometer continuous wave laser resection in combination with intravesical instillation of epirubicin for the treatment of multiple NMIVBC. From September 2007 to April 2008, sixty patients with multiple NMIVBC were included in this study (44 cases of low grade papillary urothelial carcinoma, 10 cases of high grade papillary urothelial carcinoma, and six cases of papillary urothelial neoplasm with low malignant potential). Imaging examinations including pelvic computer tomography (CT) and intravenous urography showed no extravesical extension, lymphatic metastasis or any lesions of upper urinary tract. All patients received 2-micrometer continuous wave laser therapy under continuous epidural anesthesia, and intravesical chemotherapy with epirubicin 1 week later (intravesical instillation weekly for 8 weeks, followed by monthly maintenance to 12 months). Totally 211 tumors in 60 patients were successfully removed with 2-micrometer continuous wave laser. The mean operation time was 48 minutes per patient (ranged 20-90 minutes) and 13.6 minutes per tumor (range 5-25 minutes). No obturator nerve reflection or bladder perforation occurred during the procedure. All patients finished 12 months of intravesical chemotherapy without severe complications. The mean followed-up time was 23 months. Tumor recurrences were found in 13 patients (22%). The combination of 2-micrometer continuous wave laser and intravesical chemotherapy is feasible, safe, and efficacious for the treatment of multiple NMIVBC. Copyright © 2011 Wiley-Liss, Inc.

  15. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-05-24

    The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  16. Diffusion length damage coefficient and annealing studies in proton-irradiated InP

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Vargas-Aburto, Carlos; Bailey, Sheila G.; Williams, Wendell

    1993-01-01

    We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

  17. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

    PubMed

    Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

    2016-10-12

    The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

  18. New Capabilities in the Analysis of Sub-micrometer Regions in Geological Materials with the Field Emission Electron Microprobe

    NASA Astrophysics Data System (ADS)

    Armstrong, J. T.; McSwiggen, P.; Nielsen, C.

    2013-12-01

    Quantitative electron microprobe analysis has revolutionized two-dimensional elemental analysis of Earth materials at the micrometer-scale. Newly available commercial field emission (FE-) source instruments represent significant technological advances in quantitative measurement with high spatial resolution at sub-micrometer scale - helping to bridge the gap between conventional microprobe and AEM analyses. Their performance specifications suggest the ability to extend routine quantitative analyses from ~3-5 micrometer diameter areas down to 1-2 micrometer diameter at beam energies of 15 keV; and, with care, down to 200-500 nm diameter at reduced beam energies. . In order to determine whether the level of performance suggested by the specifications is realistic, we spent a week doing analyses at the newly installed JEOL JXA-8530F field emission microprobe at Arizona State University, using a series of samples that are currently being studied in various projects at CIW. These samples included: 1) high-pressure experiment run product containing intergrowths of sub-micrometer grains of metal, sulfide, Fe-Mg-perovskite, and ferropericlase; 2) a thin section of the Ivankinsky basalt, part of the Siberian flood basalt sequence containing complex sub-micrometer intergrowths of magnetite, titanomagnetite, ilmenite, titanite and rutile; 3) a polished section of the Giroux pallasite, being studied for element partitioning, that we used as an analogue to test the capabilities for zonation and diffusion determination; and 4) a polished section of the Semarkona ordinary chondrite containing chondules comprised of highly zoned and rimmed olivines and pyroxenes in a complex mesostasis of sub-micrometer pyroxenes and glass. The results of these analyses that we will present confirmed our optimism regarding the new analytical capabilities of a field emission microprobe. We were able, at reduced voltages, to accurately analyze the major and minor element composition of intergrowth

  19. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition.

    PubMed

    Megalini, Ludovico; Šuran Brunelli, Simone Tommaso; Charles, William O; Taylor, Aidan; Isaac, Brandon; Bowers, John E; Klamkin, Jonathan

    2018-02-26

    We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO₂) stripes and oriented along the [110] direction. Undercut at the Si/SiO₂ interface was used to reduce the propagation of defects into the III-V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (AFM); transmission electron microscopy (TEM); and electron channeling contrast imaging (ECCI); which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 10⁸/cm² and 1.2 nm; respectively and 7.8 × 10⁷/cm² and 10.8 nm for the GaAs-on-Si layer.

  20. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

    PubMed Central

    Megalini, Ludovico; Šuran Brunelli, Simone Tommaso; Charles, William O.; Taylor, Aidan; Isaac, Brandon; Klamkin, Jonathan

    2018-01-01

    We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2) stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (AFM); transmission electron microscopy (TEM); and electron channeling contrast imaging (ECCI); which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer. PMID:29495381

  1. STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

    NASA Astrophysics Data System (ADS)

    Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Al-Douri, Y.

    2012-02-01

    The surface of materials plays an important role in their technological applications. In the interest to study the stability of materials and their behavior, we irradiate them by the electrons by using the electron spectroscopy such as the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS). These methods have proved their good sensitivity to study material surfaces. In this paper, we give some results about the effect of the electron beam irradiating the compounds InP, InSb, InPO4 and InxGa1-xAs. The III-V semiconductors InP and InSb seem to be sensitive to the electron irradiation. This breaks the chemical bonds between the element III and V which leads to an oxidation process at the surface. The AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In-P) and formation of new oxide other than InPO4. In this study we show an important result concerning the effect of the electron beam on the compound InxGa1-xAs by varying the parameter x to obtain In0.2Ga0.8As and In0.53Ga0.47As. It appears that the electron beam affects In0.2Ga0.8As too much in comparison with In0.53Ga0.47As. In the case of the irradiation of In0.2Ga0.8As, there is breaking of chemical bonds between indium and GaAs leading to formation of indium oxide associated to GaAs.

  2. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

    PubMed

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

    2017-11-25

    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  3. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  4. Ice Nuclei measurements across Europe within BACCHUS

    NASA Astrophysics Data System (ADS)

    Rinaldi, Matteo; Nicosia, Alessia; Santachiara, Gianni; Decesari, Stefano; Paglione, Marco; Sandrini, Silvia; Gilardoni, Stefania; Cristofanelli, Paolo; Marinoni, Angela; Bonasoni, Paolo; Facchini, Maria Cristina; Belosi, Franco

    2017-04-01

    Ice in clouds is formed prevalently via heterogeneous nucleation involving aerosol particles known as ice nucleating particles (INPs). A wide variety of measurement techniques have been developed for detecting INPs in different activation modes. In this study, concentrations of INPs were detected by the membrane filter technique, using a dynamic filter processing chamber (DFPC). Experimental campaigns were carried out in the framework of BACCHUS (FP7-603445) and Air-Sea Lab (CNR) projects in different locations and seasons: San Pietro Capofiume (SPC), a rural background site in the Po Valley (Italy) (winter campaign: SPC1; summer campaign: SPC2); Mace Head (MH), a North Atlantic coastal site in Western Ireland, during August 2015, with the aim of investigating the dominant sources of INP in the North Atlantic Marine Boundary Layer; Monte Cimone (MC) Global Atmospheric Watch (GAW) station, a high altitude site (2165 m asl) in the Apennine Mounts facing the Po Valley (summer campaign: MC1; winter campaign: MC2) and Capogranitola (CG) a coastal site facing the Strait of Sicily, representative of the Mediterranean background, in April 2016. Samples were collected using a parallel PM1 - PM10 sampling. The concentration of INP was detected at different temperatures and supersaturations with respect to ice and water (Santachiara et al., 2010). Measurements with the DFPC below water saturation (Sw< 1) are considered representative of deposition nucleation, while above water saturation (Sw ≥ 1) of deposition and condensation-freezing. In detail, measurements were carried out at -22°C (MH and CG) and -18°C (MH, MC and CG), with Sw = 0.96 and Sw = 1.02. The lower average concentration in the PM10 fraction was measured at MH (10 m-3) and the highest at SPC (310 m-3, during SPC1). Comparison of INP in the PM1 and PM10 size ranges shows the importance of measuring the freezing activity of particles larger than one micrometer (Mason et al., 2016). Saharan dust transport

  5. Aerosol measurements during COPE: composition, size, and sources of CCN and INPs at the interface between marine and terrestrial influences

    NASA Astrophysics Data System (ADS)

    Taylor, Jonathan W.; Choularton, Thomas W.; Blyth, Alan M.; Flynn, Michael J.; Williams, Paul I.; Young, Gillian; Bower, Keith N.; Crosier, Jonathan; Gallagher, Martin W.; Dorsey, James R.; Liu, Zixia; Rosenberg, Philip D.

    2016-09-01

    Heavy rainfall from convective clouds can lead to devastating flash flooding, and observations of aerosols and clouds are required to improve cloud parameterisations used in precipitation forecasts. We present measurements of boundary layer aerosol concentration, size, and composition from a series of research flights performed over the southwest peninsula of the UK during the COnvective Precipitation Experiment (COPE) of summer 2013. We place emphasis on periods of southwesterly winds, which locally are most conducive to convective cloud formation, when marine air from the Atlantic reached the peninsula. Accumulation-mode aerosol mass loadings were typically 2-3 µg m-3 (corrected to standard cubic metres at 1013.25 hPa and 273.15 K), the majority of which was sulfuric acid over the sea, or ammonium sulfate inland, as terrestrial ammonia sources neutralised the aerosol. The cloud condensation nuclei (CCN) concentrations in these conditions were ˜ 150-280 cm-3 at 0.1 % and 400-500 cm-3 at 0.9 % supersaturation (SST), which are in good agreement with previous Atlantic measurements, and the cloud drop concentrations at cloud base ranged from 100 to 500 cm-3. The concentration of CCN at 0.1 % SST was well correlated with non-sea-salt sulfate, meaning marine sulfate formation was likely the main source of CCN. Marine organic aerosol (OA) had a similar mass spectrum to previous measurements of sea spray OA and was poorly correlated with CCN. In one case study that was significantly different to the rest, polluted anthropogenic emissions from the southern and central UK advected to the peninsula, with significant enhancements of OA, ammonium nitrate and sulfate, and black carbon. The CCN concentrations here were around 6 times higher than in the clean cases, and the cloud drop number concentrations were 3-4 times higher. Sources of ice-nucleating particles (INPs) were assessed by comparing different parameterisations used to predict INP concentrations, using measured

  6. Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fu, Dong; Song, Jiakun; Yu, Hailong

    2016-03-14

    High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency ismore » as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.« less

  7. Design issues for directional coupler- and MMI-based optical microring resonator filters on InP

    NASA Astrophysics Data System (ADS)

    Themistos, Christos; Kalli, Kyriacos; Komodromos, Michalis; Rajarajan, Muttukrishnan; Rahman, B. M. A.; Grattan, Kenneth T. V.

    2004-08-01

    The characterization and optimization of optical microring resonator-based optical filters on deeply etched GaInAsP-Inp waveguides, using the finite element-based beam propagation approach is presented here. Design issues for directional coupler- and multimode interference coupler-based devices, such as field evolution, optical power, phase, fabrication tolerance and wavelength dependence have been investigated.

  8. The Herschel ATLAS: Evolution of the 250 Micrometer Luminosity Function Out to z = 0.5

    NASA Technical Reports Server (NTRS)

    Dye, S.; Dunne, L.; Eales, S.; Smith, D. J. B.; Amblard, A.; Auld, R.; Baes, M.; Baldry, I. K.; Bamford, S.; Blain, A. W.; hide

    2010-01-01

    We have determined the luminosity function of 250 micrometer-selected galaxies detected in the approximately equal to 14 deg(sup 2) science demonstration region of the Herschel-ATLAS project out to a redshift of z = 0.5. Our findings very clearly show that the luminosity function evolves steadily out to this redshift. By selecting a sub-group of sources within a fixed luminosity interval where incompleteness effects are minimal, we have measured a smooth increase in the comoving 250 micrometer luminosity density out to z = 0.2 where it is 3.6(sup +1.4) (sub -0.9) times higher than the local value.

  9. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  10. High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

    1997-01-01

    A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

  11. Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition.

    PubMed

    Radny, Tobias; Gnaser, Hubert

    2014-01-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

  12. Influence of Solar-Geomagnetic Disturbances on SABER Measurements of 4.3 Micrometer Emission and the Retrieval of Kinetic Temperature and Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Mertens, Christopher J.; Winick, Jeremy R.; Picard, Richard H.; Evans, David S.; Lopez-Puertas, Manuel; Wintersteiner, Peter P.; Xu, Xiaojing; Mlynczak, Martin G.; Russell, James M., III

    2008-01-01

    Thermospheric infrared radiance at 4.3 micrometers is susceptible to the influence of solar-geomagnetic disturbances. Ionization processes followed by ion-neutral chemical reactions lead to vibrationally excited NO(+) (i.e., NO(+)(v)) and subsequent 4.3 micrometer emission in the ionospheric E-region. Large enhancements of nighttime 4.3 m emission were observed by the TIMED/SABER instrument during the April 2002 and October-November 2003 solar storms. Global measurements of infrared 4.3 micrometer emission provide an excellent proxy to observe the nighttime E-region response to auroral dosing and to conduct a detailed study of E-region ion-neutral chemistry and energy transfer mechanisms. Furthermore, we find that photoionization processes followed by ion-neutral reactions during quiescent, daytime conditions increase the NO(+) concentration enough to introduce biases in the TIMED/SABER operational processing of kinetic temperature and CO2 data, with the largest effect at summer solstice. In this paper, we discuss solar storm enhancements of 4.3 micrometer emission observed from SABER and assess the impact of NO(+)(v) 4.3 micrometer emission on quiescent, daytime retrievals of Tk/CO2 from the SABER instrument.

  13. Similarities Between Cometary, Meteoritic, and Laboratory Analog Dust: Hints from the Attribution of the 10-micrometer Band

    NASA Astrophysics Data System (ADS)

    Colangeli, L.; Mennella, V.; Bussoletti, E.; Merluzzi, P.; Rotundi, A.; Palumbo, P.; di Marino, C.

    1993-07-01

    It is well known that the infrared emission of many comets is characterized by a broad feature at 10 micrometers, that has been attributed to a Si-O stretching resonance in amorphous and/or hydrated silicate grains. In the case of comets Halley [1,2], Bradfield [3] and Levy [4] two spectral components have been observed: the wide peak centered at 9.8 micrometers and a sharp feature at 11.3 micrometers. This last band has been interpreted with crystalline olivine silicatic grains [1,2,5]. However, recently, it has been pointed out [6] that the laboratory data frequently used in the fits refer to grains embedded in a matrix, which should produce a significant shift of the peak position, according to Mie computations. We have performed laboratory experiments on various silicatic samples with the perspective of determining their optical properties, to study experimentally the influence of matrix effects, and to use the final spectra to perform comparisons with observations. The samples are four terrestrial materials, olivine forsterite, jadeite pyroxene, andesite feldspar and impactite glass, and two meteoritic samples, chondrite (Zacatecas, Mexico) and pallasite (Atacama, Chile). Fine powders of the bulk materials were obtained by grinding calibrated mass amounts of the various samples in an agata mill. The morphological characterization of the samples was performed by means of S.E.M. (scanning electron microscopy) technique. EDX analysis was also performed to determine elemental composition. IR transmission spectra were obtained by using a double beam spectrophotometer that covers the spectral range 2.5-50 micrometers. The standard pellet technique was used by embedding dust samples in KBr or CsI matrices. For comparison, measurements were also performed by depositing small amounts of dust onto KBr windows. In this last case, dust-matrix interaction should be practically absent as grains are simply sitting onto the matrix. The data obtained from the spectroscopic

  14. High-Resolution IR Absorption Spectroscopy of Polycyclic Aromatic Hydrocarbons in the 3-micrometers Region: Role of Periphery

    NASA Technical Reports Server (NTRS)

    Maltseva, Elena; Petrignani, Annemieke; Candian, Alessandra; Mackie, Cameron J.; Huang, Xinchuan; Lee, Timothy J.; Tielens, Alexander G. G. M.; Oomens, Jos; Buma, Wybren Jan

    2017-01-01

    In this work we report on high-resolution IR absorption studies that provide a detailed view on how the peripheral structure of irregular polycyclic aromatic hydrocarbons (PAHs) affects the shape and position of their 3-micrometers absorption band. To this purpose we present mass-selected, high-resolution absorption spectra of cold and isolated phenanthrene, pyrene, benz[a]antracene, chrysene, triphenylene, and perylene molecules in the 2950-3150 per cm range. The experimental spectra are compared with standard harmonic calculations, and anharmonic calculations using a modified version of the SPECTRO program that incorporates a Fermi resonance treatment utilizing intensity redistribution. We show that the 3-micrometers region is dominated by the effects of anharmonicity, resulting in many more bands than would have been expected in a purely harmonic approximation. Importantly, we find that anharmonic spectra as calculated by SPECTRO are in good agreement with the experimental spectra. Together with previously reported high-resolution spectra of linear acenes, the present spectra provide us with an extensive dataset of spectra of PAHs with a varying number of aromatic rings, with geometries that range from open to highly-condensed structures, and featuring CH groups in all possible edge configurations. We discuss the astrophysical implications of the comparison of these spectra on the interpretation of the appearance of the aromatic infrared 3-micrometers band, and on features such as the two-component emission character of this band and the 3-micrometers emission plateau.

  15. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    NASA Astrophysics Data System (ADS)

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  16. Current limiting cathodes for non transit-time limited operation of InP TED's in the 100 GHz window

    NASA Astrophysics Data System (ADS)

    Friscouri, Marie-Renée; Rolland, Paul-Alain

    1985-03-01

    Reverse-biased low-barrier Schottky contact and reverse-biased isotype GaInAsP/InP heterojunction, used as current limiting cathodes for InP TED's, are investigated on the basis of output power and efficiency improvement as compared to N +NN + devices.

  17. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tayagaki, Takeshi, E-mail: tayagaki-t@aist.go.jp; Sugaya, Takeyoshi

    2016-04-11

    We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔE{sub c} ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carriermore » capture in QDs via Auger relaxation.« less

  18. Effective surface passivation of multi-shelled InP quantum dots through a simple complexing with titanium species

    NASA Astrophysics Data System (ADS)

    Jo, Jung-Ho; Kim, Min-Seok; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2018-01-01

    Fluorescent efficiency of various visible quantum dots (QDs) has been incessantly improved to meet industrially high standard mainly through the advance in core/shell heterostructural design, however, their stability against degradable environments appears still lacking. The most viable strategy to cope with this issue was to exploit chemically inert oxide phases to passivate QD surface in the form of either individual overcoating or matrix embedding. Herein, we report a simple but effective means to passivate QD surface by complexing its organic ligands with a metal alkoxide of titanium isopropoxide (Ti(i-PrO)4). For this, highly efficient red-emitting InP QDs with a multi-shell structure of ZnSeS intermediate plus ZnS outer shell are first synthesized and then the surface of resulting InP/ZnSeS/ZnS QDs is in-situ decorated with Ti(i-PrO)4. The presence of Tisbnd O species from Ti(i-PrO)4 on QD surface is verified by x-ray photoelectron and Fourier transform infrared spectroscopic analyses. Two comparative dispersions of pristine versus Ti(i-PrO)4-complexed QDs are exposed for certain periods of time to UV photon and heat and their temporal changes in photoluminescence are monitored, resulting in a huge improvement in QD stability from the latter ones through Ti(i-PrO)4-mediated better surface passivation.

  19. A new high efficiency InP acousto-optic device for IR wavelengths

    NASA Astrophysics Data System (ADS)

    Soos, Jolanta I.; Rosemeier, Ronald G.; Rosenbaum, Joel

    1990-09-01

    InP acoustooptic Bragg cells which are IR-transparent in the 1-10 micron bandpass have a center frequency in the 200-600 MHz range, and a diffraction efficiency of 40-60 percent, on the basis of 1-W RF driving power. These devices are anticipated to be ideal in such applications as fiber-optic modulators, IR scanners, deflectors, and HF mode-lockers. In the course of fabrication, the photoelastic constant p44 has been defined; using other crystallographic configurations, such photoelastic constants as p11 and p12 are expected to emerge.

  20. Chloride ion addition for controlling shapes and properties of silver nanorods capped by polyvinyl alcohol synthesized using polyol method

    NASA Astrophysics Data System (ADS)

    Junaidi, Yunus, Muhammad; Triyana, Kuwat; Harsojo, Suharyadi, Edi

    2016-04-01

    We report our investigation on the effect of chloride ions on controlling the shapes and properties of silver nanorods (AgNRs) synthesized using a polyol method. In this study, we used polyvinyl alcohol (PVA) as a capping agent and sodium chloride (NaCl) as a salt precursor and performed at the oil bath temperature of 140°C. The chloride ions originating from the NaCl serve to control the growth of the silver nanorods. Furthermore, the synthesized silver nanorods were characterized using SEM and XRD. The results showed that besides being able to control the growth of AgCl atoms, the chloride ions were also able to control the growth of multi-twinned-particles into the single crystalline of silver nanorods by micrometer-length. At an appropriate concentration of NaCl, the diameter of silver nanorods decreased significantly compared to that of without chloride ion addition. This technique may be useful since a particular diameter of silver nanorods affects a particular application in the future.

  1. Chloride ion addition for controlling shapes and properties of silver nanorods capped by polyvinyl alcohol synthesized by polyol method

    NASA Astrophysics Data System (ADS)

    Junaidi, Triyana, Kuwat; Harsojo, Suharyadi, Edi

    2016-04-01

    We report our investigation on the effect of chloride ions oncontrolling the shapes and properties of silver nanorods(AgNRs) synthesized using a polyol method. In this study, we used polyvinyl alcohol (PVA) as a capping agent and sodium chloride (NaCl) as asalt precursor and performed at the oilbath temperature of 140 °C. The chloride ions originating from the NaCl serve to control the growth of the silver nanorods. Furthermore, the synthesized silver nanorodswere characterized using UV-VIS, XRD, SEM and TEM. The results showed that besides being able to control the growth of AgCl atoms, the chloride ions were also able to control the growth of multi-twinned-particles into the single crystalline silver nanorods by micrometer-length. At an appropriate concentration of NaCl, the diameter of silver nanorodsdecreased significantly compared to that of without chloride ion addition. This technique may be useful since a particular diameter of silver nanorods affects a particular application in the future.

  2. Plasma deposited diamondlike carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1984-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  3. FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

    NASA Astrophysics Data System (ADS)

    Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

    2016-01-01

    This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

  4. Integrated cloud infrastructure of the LIT JINR, PE "NULITS" and INP's Astana branch

    NASA Astrophysics Data System (ADS)

    Mazhitova, Yelena; Balashov, Nikita; Baranov, Aleksandr; Kutovskiy, Nikolay; Semenov, Roman

    2018-04-01

    The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR) and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity "Nazarbayev University Library and IT services" (PE "NULITS") Autonomous Education Organization "Nazarbayev University" (AO NU) and The Institute of Nuclear Physics' (INP's) Astana branch.

  5. The INPE handouts to the 6th LANDSAT Technical Working Group (LTWG) Meeting

    NASA Technical Reports Server (NTRS)

    Debarrosaguirre, J. L. (Principal Investigator); Parada, L. E. M.; Depaulapereira, S.

    1984-01-01

    LANDSAT receiving and processing system in its present configuration and status are described, as well as the experience already obtained with LANDSATs 4 and 5. The revised table of station plans for TM reception and products and of implementation schedule for data formats employing superstructure conventions is updated. Standardization of the worldwide reference systems is proposed. The INPE preliminary TM products price list is included. A TM image received and processed is shown to illustrate the appearance of the products offered.

  6. Material growth and characterization for solid state devices

    NASA Technical Reports Server (NTRS)

    Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

    1984-01-01

    Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

  7. Thermally stable, low resistance contact systems for use with shallow junction p(+) nn(+) and n(+)pp(+) InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Hoffman, R. W.

    1995-01-01

    Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.

  8. Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering

    NASA Astrophysics Data System (ADS)

    Tabuchi, M.; Yamada, N.; Fujibayashi, K.; Takeda, Y.; Kamei, H.

    1996-05-01

    We conducted x-ray crystal truncation rod (CTR) measurements using synchro-tron radiation to analyze the As atom distribution in InP to the order of 1 ML. The InP samples which were only exposed to AsH3(+PH3) and capped by InP were investigated to study the effect of the purge sequence. The purge sequence is unavoidable to grow heteroepitaxial layers by OMVPE and is considered to affect largely the structure of the interface. From the results of the measurement and the computer simulation, the distribution of P and As atoms of the order of 1 ML was discussed as functions of the exposing time. It was shown that the number of As atoms contained in the samples saturated when the AsH3-exposure time is longer than 10 s. Comparing the profiles of AsH3-exposed samples with that of (AsH3 + PH3)-exposed samples, it was found that the As distribution in the buffer layer was suppressed in (AsH3 + PH3)-exposed samples. In order to obtain the sharp interfaces, the AsH3-exposure time must be shorter than 0.5 s.

  9. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

    PubMed

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  10. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  11. LETTER TO THE EDITOR: Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

    NASA Astrophysics Data System (ADS)

    Schvartzman, M.; Sidorov, V.; Ritter, D.; Paz, Y.

    2001-10-01

    A method for the passivation of indium phosphide, based on thiolated organic self-assembled monolayers (SAMs) that form highly ordered, close-packed structures on the semiconductor surface, is presented. It is shown that the intensity of steady-state photoluminescence (PL) of n-type InP wafers covered with the thiolated SAMs increases significantly (as much as 14-fold) upon their covering with the monolayers. The ease with which one can tailor the outer functional groups of the SAMs provides a way to connect this new class of passivators with standard encapsulators, such as polyimide. Indeed, the PL intensity of SAM-coated InP wafers was not altered upon their overcoating with polyimide, despite the high curing temperature of the polymer (200 °C).

  12. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    NASA Technical Reports Server (NTRS)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  13. Ex-Situ and In-Situ Ellipsometric Studies of the Thermal Oxide on InP

    DTIC Science & Technology

    1990-12-06

    ion---- Distribution/ Availabilit ? Codes£v l llt Codes Avail and/or Dist| Special Abstract The thermally grown InP oxide as etched by an aqueous...aqueous NH4OH/NH4F, and Law(17) has reported observations of orientational ordering of water and organic solvents on pyrex surfaces by in-situ...minutes, followed by a sequence of acetone, deionized water (d. i. water ) rinse. After being dipped in a concentrated aqueous HF solution for 15 seconds

  14. Effective Integration of Targeted Tumor Imaging and Therapy Using Functionalized InP QDs with VEGFR2 Monoclonal Antibody and miR-92a Inhibitor.

    PubMed

    Wu, Yi-Zhou; Sun, Jie; Zhang, Yaqin; Pu, Maomao; Zhang, Gen; He, Nongyue; Zeng, Xin

    2017-04-19

    Rapid diagnosis and targeted drug treatment require agents that possess multiple functions. Nanomaterials that facilitate optical imaging and direct drug delivery have shown great promise for effective cancer treatment. In this study, we first modified near-infrared fluorescent indium phosphide quantum dots (InP QDs) with a vascular endothelial growth factor receptor 2 (VEGFR2) monoclonal antibody to afford targeted drug delivery function. Then, a miR-92a inhibitor, an antisense microRNA that enhances the expression of tumor suppressor p63, was attached to the VEGFR2-InP QDs via electrostatic interactions. The functionalized InP nanocomposite (IMAN) selectively targets tumor sites and allows for infrared imaging in vivo. We further explored the mechanism of this active targeting. The IMAN was endocytosed and delivered in the form of microvesicles via VEGFR2-CD63 signaling. Moreover, the IMAN induced apoptosis of human myelogenous leukemia cells through the p63 pathway in vitro and in vivo. These results indicate that the IMAN may provide a new and promising chemotherapy strategy against cancer cells, particularly by its active targeting function and utility in noninvasive three-dimensional tumor imaging.

  15. Possible Thermal Metamorphism on the C Asteroids Seen from the 3-micrometer Hydration Band in Comparison with Heated CI/CM Meteorites

    NASA Astrophysics Data System (ADS)

    Hiroi, T.; Pieters, C. M.; Zolensky, M. E.; Lipschutz, M. E.

    1995-09-01

    Thermal metamorphism study of the C (including G, B, and F) asteroids [1] is revisited using their selected reflectance spectra (0.3-3.6 micrometers) [2]. Laboratory spectra of some carbonaceous chondrites and heated Murchison samples [3] have been also measured for comparison. Both CI1 and CM2 meteorites have a characteristic 3-micrometer hydration band [4] at various strengths, and most CM2 meteorites also have 0.7, 0.9, and 1.1-micrometer bands due to ferric/ferrous Fe in septechlorites (Fig. 1). The unusual CI/CM meteorites (Y-86720, B-7904, Y-82162, etc.) that have evidence of thermal metamorphism have no 0.7-micrometer band but still have a weak 3-micrometer band. The 3-micrometer band of heated Murchison samples is gradually reduced for samples heated up to 500 degrees C and gone around 600 degrees C. The 0.7-micrometer band is gone even before 400 degrees C. The 3-micrometer band strengths of the unusual CI/CM meteorites correspond to the heating temperature between 500 and 600 degrees C if the process was similar to the Murchison heating experiment. None of the C asteroids have both the 3-micrometer band strength and overall spectral profile comparable to the common CI/CM meteorites studied here. Among the seven selected asteroids, only two have a meteorite counterpart over this wavelength range. Asteroid 511 Davida and B-7904 are the best counterparts in both spectral shape and brightness (Fig. 1). Existence of the unusual CI/CM meteorites suggests that there were their parent bodies that contained water (ice) at appropriate temperatures over sufficient time to induce aqueous alteration and were subsequently heated up to 500-600 degrees C. It has been recently suggested that some dark inclusions of Vigarano (CV3) experienced extensive aqueous alteration followed by complete dehydration and recrystallization [5]. Since dark inclusions are common in all CV3 meteorites, aqueous alteration and late-stage heating may have been widespread on the CV3 parent

  16. Anomalous B-field Dependence of Spin-flip Time in High Purity InP

    NASA Astrophysics Data System (ADS)

    Linpeng, Xiayu; Karin, Todd; Barbour, Russell; Glazov, Mikhail; Fu, Kai-Mei

    2015-03-01

    We observe an anomalous B-field dependence of the spin-flip time (T1) of electrons bound to shallow donors which cannot be explained by current spin-relaxation theories. We conduct resonant pump-probe measurements in high-purity InP from the low to high magnetic field regimes, with a maximum T1 (400 μs) observed near the turning point gμB B ~=kB T . At low B, the T1 dependence on B is consistent with an electron correlation time (τc) in the tens of nanoseconds. The physical mechanism for the short τc in this high-purity sample (n ~= 2 ×1014 cm-3) is unclear, but a strong temperature (T) dependence indicates T1 can be further increased by lowering T below the 1.5 K experimental temperature. At high B, a B-3 dependence is observed, in contrast to the expected B-5 predicted by single-phonon spin-orbit mediated interactions. An understanding of the anomalous B-field dependence is expected to elucidate the effect of electron transport (low-field) and phonons (high-field) on T1 for shallow donors, which is of interest for both ensemble and single-spin quantum information applications. This material is based upon work supported by the National Science Foundation under Grant No. 1150647, DGE-0718124 and DGE-1256082. InP samples were graciously provided by Simon Watkins at Simon Fraser University.

  17. Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

    PubMed

    Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

    2018-02-08

    Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

  18. InP shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

    1989-01-01

    Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

  19. Transport Properties of Thin Bismuth Films on InP (110) Surfaces by Scanning Tunneling Potentiometry

    NASA Astrophysics Data System (ADS)

    Feenstra, R. M.; Briner, B. G.; Chin, T. P.; Woodall, J. M.

    1996-03-01

    Charge transport in 20--30 Å thick Bi-films is studied by scanning tunneling potentiometry (STP) at room temperature. The Bi is deposited on cleaved InP(110) surfaces at temperatures near 140 K, yielding atomically flat films interspersed with 12 Å deep holes. The InP substrates contain conducting/insulating/conducting layers, which in cross-section are used to form contacts to the film, thus enabling lateral current densities as high as 8 × 10^6 A/cm^2 . Potential variations due to scattering of this lateral current is detected using STP, by locating the zero-crossing of current-voltage characteristics at each pixel in an image. Potential images reveal, on a coarse scale, a smooth ramp arising from the electric field due to phonon scattering in the film, from which an electron-phonon scattering length of >1000 Å is deduced. On a finer scale, potential steps 2--10 mV high are seen near surface holes and grain boundaries in the film. Detailed study of the ballistic scattering near the holes reveals a dipole shaped feature, which is identified as a residual resistivity dipole. *present address: Physics, Carnegie Mellon Univ., Pittsburgh PA 15213 **now at: Fritz-Haber-Institut, 14195 Berlin, briner@fhi-berlin.mpg.de

  20. Titan's Aerosol and Stratospheric Ice Opacities Between 18 and 500 Micrometers: Vertical and Spectral Characteristics from Cassini CIRS

    NASA Technical Reports Server (NTRS)

    Anderson, Carrie M.; Samuelson, Robert E.

    2011-01-01

    Vertical distributions and spectral characteristics of Titan's photochemical aerosol and stratospheric ices are determined between 20 and 560 per centimeter (500-18 micrometers) from the Cassini Composite Infrared Spectrometer (CIRS). Results are obtained for latitudes of 15 N, 15 S, and 58 S, where accurate temperature profiles can be independently determined. In addition, estimates of aerosol and ice abundances at 62 N relative to those at 15 S are derived. Aerosol abundances are comparable at the two latitudes, but stratospheric ices are approximately 3 times more abundant at 62 N than at 15 S. Generally, nitrile ice clouds (probably HCN and HC3N), as inferred from a composite emission feature at approximately 160 per centimeter, appear to be located over a narrow altitude range in the stratosphere centered at approximately 90 km. Although most abundant at high northern latitudes, these nitrile ice clouds extend down through low latitudes and into mid southern latitudes, at least as far as 58 S. There is some evidence of a second ice cloud layer at approximately 60 km altitude at 58 S associated with an emission feature at approximately 80 per centimeter. We speculate that the identify of this cloud may be due to C2H6 ice, which in the vapor phase is the most abundant hydrocarbon (next to CH4) in the stratosphere of Titan. Unlike the highly restricted range of altitudes (50-100 km) associated with organic condensate clouds, Titan's photochemical aerosol appears to be well-mixed from the surface to the top of the stratosphere near an altitude of 300 km, and the spectral shape does not appear to change between 15 N and 58 S latitude. The ratio of aerosol-to-gas scale heights range from 1.3-2.4 at about 160 km to 1.1-1.4 at 300 km, although there is considerable variability with latitude, The aerosol exhibits a very broad emission feature peaking at approximately 140 per centimeter. Due to its extreme breadth and low wavenumber, we speculate that this feature may

  1. Two-Dimensional Polymer Synthesized via Solid-State Polymerization for High-Performance Supercapacitors.

    PubMed

    Liu, Wei; Ulaganathan, Mani; Abdelwahab, Ibrahim; Luo, Xin; Chen, Zhongxin; Rong Tan, Sherman Jun; Wang, Xiaowei; Liu, Yanpeng; Geng, Dechao; Bao, Yang; Chen, Jianyi; Loh, Kian Ping

    2018-01-23

    Two-dimensional (2-D) polymer has properties that are attractive for energy storage applications because of its combination of heteroatoms, porosities and layered structure, which provides redox chemistry and ion diffusion routes through the 2-D planes and 1-D channels. Here, conjugated aromatic polymers (CAPs) were synthesized in quantitative yield via solid-state polymerization of phenazine-based precursor crystals. By choosing flat molecules (2-TBTBP and 3-TBQP) with different positions of bromine substituents on a phenazine-derived scaffold, C-C cross coupling was induced following thermal debromination. CAP-2 is polymerized from monomers that have been prepacked into layered structure (3-TBQP). It can be mechanically exfoliated into micrometer-sized ultrathin sheets that show sharp Raman peaks which reflect conformational ordering. CAP-2 has a dominant pore size of ∼0.8 nm; when applied as an asymmetric supercapacitor, it delivers a specific capacitance of 233 F g -1 at a current density of 1.0 A g -1 , and shows outstanding cycle performance.

  2. MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

    NASA Astrophysics Data System (ADS)

    Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

    1989-12-01

    A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

  3. Separation of ice crystals from interstitial aerosol particles using virtual impaction at the Fifth International Ice Nucleation Workshop FIN-3

    NASA Astrophysics Data System (ADS)

    Roesch, M.; Garimella, S.; Roesch, C.; Zawadowicz, M. A.; Katich, J. M.; Froyd, K. D.; Cziczo, D. J.

    2016-12-01

    In this study, a parallel-plate ice chamber, the SPectrometer for Ice Nuclei (SPIN, DMT Inc.) was combined with a pumped counterflow virtual impactor (PCVI, BMI Inc.) to separate ice crystals from interstitial aerosol particles by their aerodynamic size. These measurements were part of the FIN-3 workshop, which took place in fall 2015 at Storm Peak Laboratory (SPL), a high altitude mountain top facility (3220 m m.s.l.) in the Rocky Mountains. The investigated particles were sampled from ambient air and were exposed to cirrus-like conditions inside SPIN (-40°C, 130% RHice). Previous SPIN experiments under these conditions showed that ice crystals were found to be in the super-micron range. Connected to the outlet of the ice chamber, the PCVI was adjusted to separate all particulates aerodynamically larger than 3.5 micrometer to the sample flow while smaller ones were rejected and removed by a pump flow. Using this technique reduces the number of interstitial aerosol particles, which could bias subsequent ice nucleating particle (INP) analysis. Downstream of the PCVI, the separated ice crystals were evaporated and the flow with the remaining INPs was split up to a particle analysis by laser mass spectrometry (PALMS) instrument a laser aerosol spectrometer (LAS, TSI Inc.) and a single particle soot photometer (SP2, DMT Inc.). Based on the sample flow and the resolution of the measured particle data, the lowest concentration threshold for the SP2 instrument was 294 INP L-1 and for the LAS instrument 60 INP L-1. Applying these thresholds as filters to the measured PALMS time series 944 valid INP spectra using the SP2 threshold and 445 valid INP spectra using the LAS threshold were identified. A sensitivity study determining the number of good INP spectra as a function of the filter threshold concentration showed a two-phase linear growth when increasing the threshold concentration showing a breakpoint around 100 INP L-1.

  4. The LANDSAT system operated in Brazil by CNPq/INPE - results obtained in the area of mapping and future perspectives

    NASA Technical Reports Server (NTRS)

    Dejesusparada, N. (Principal Investigator); Barbosa, M. N.

    1981-01-01

    The LANDSAT system, operated in the country by CNPg/INPE since 1973, systematically acquires, produces, and distributes both multispectral and panchromatic images obtained through remote sensing satellites to thousands of researchers and technicians involved in the natural resources survey. To cooperate in the solution of national problems, CNPq/INPE is developing efforts in the area of manipulation of those images with the objective of making them useful as planimetric bases for the simple revision of already published maps or for its utilization as basic material in regions not yet reliability mapped. The results obtained from performed tests are presented and the existing limitations are discussed. The new system purchased to handle data from the next series of LANDSAT as well as from MAPSAT and SPOT which will be in operation within the 80's decade, and are designed not only for natural resources survey but also for the solution of cartographic problems.

  5. Observed circuit limits to time resolution in correlation measurements with Si-on-sapphire, GaAs, and InP picosecond photoconductors

    NASA Astrophysics Data System (ADS)

    Hammond, R. B.; Paulter, N. G.; Wagner, R. S.

    1984-08-01

    Cross-correlation measurements of the response of photoconductor pulsers and sampling gates excited by a femtosecond laser are reported. The photoconductors were fabricated in microstrip transmission line structures on Si-on-sapphire, semiinsulating GaAs, and semiinsulating InP wafers. The photoconductor sampling gates were ion beam-damaged to produce short carrier lifetimes (less than 3 ps in one case). Damage was introduced with 6 MeV Ne-20 on the Si-on-sapphire, 2 MeV H-2 on the GaAs, and 2 MeV He-4 on the InP. Doses in the range 10 to the 12th - 10 to the 15th were used. Results show circuit limits to the time resolution in correlation measurements from two sources: (1) RC time constants due to photoconductor gap capacitance and transmission line characteristic impedance and (2) dispersion in microstrip transmission lines.

  6. Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technology

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Paidi, V.; Griffith, Z.; Dahlstrom, M.; Wei, Y.; Urteaga, M.; Rodell, M. J. W.; Fung, A.

    2004-01-01

    We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.

  7. Refractive indexes of (Al, Ga, In) as epilayers on InP for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Mondry, M. J.; Babic, D. I.; Bowers, J. E.; Coldren, L. A.

    1992-06-01

    MBE grown bulk and short period superlattices of (Al, Ga, In) As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al, Ga, In) As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model and the model coefficients are given. The resulting expression can be used in the design of wave-guides, modulators, and other optical devices.

  8. Chloride ion addition for controlling shapes and properties of silver nanorods capped by polyvinyl alcohol synthesized by polyol method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Junaidi; Departement of Physics, Lampung University, Bandar Lampung; Triyana, Kuwat, E-mail: triyana@ugm.ac.id

    2016-04-19

    We report our investigation on the effect of chloride ions oncontrolling the shapes and properties of silver nanorods(AgNRs) synthesized using a polyol method. In this study, we used polyvinyl alcohol (PVA) as a capping agent and sodium chloride (NaCl) as asalt precursor and performed at the oilbath temperature of 140 °C. The chloride ions originating from the NaCl serve to control the growth of the silver nanorods. Furthermore, the synthesized silver nanorodswere characterized using UV-VIS, XRD, SEM and TEM. The results showed that besides being able to control the growth of AgCl atoms, the chloride ions were also able tomore » control the growth of multi-twinned-particles into the single crystalline silver nanorods by micrometer-length. At an appropriate concentration of NaCl, the diameter of silver nanorodsdecreased significantly compared to that of without chloride ion addition. This technique may be useful since a particular diameter of silver nanorods affects a particular application in the future.« less

  9. Chloride ion addition for controlling shapes and properties of silver nanorods capped by polyvinyl alcohol synthesized using polyol method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Junaidi, E-mail: junaidi.1982@fmipa.unila.ac.id; Department of Physics, Lampung University, Bandar Lampung; Yunus, Muhammad, E-mail: muhammad.yunus@mail.ugm.ac.id

    2016-04-19

    We report our investigation on the effect of chloride ions on controlling the shapes and properties of silver nanorods (AgNRs) synthesized using a polyol method. In this study, we used polyvinyl alcohol (PVA) as a capping agent and sodium chloride (NaCl) as a salt precursor and performed at the oil bath temperature of 140°C. The chloride ions originating from the NaCl serve to control the growth of the silver nanorods. Furthermore, the synthesized silver nanorods were characterized using SEM and XRD. The results showed that besides being able to control the growth of AgCl atoms, the chloride ions were alsomore » able to control the growth of multi-twinned-particles into the single crystalline of silver nanorods by micrometer-length. At an appropriate concentration of NaCl, the diameter of silver nanorods decreased significantly compared to that of without chloride ion addition. This technique may be useful since a particular diameter of silver nanorods affects a particular application in the future.« less

  10. The effect of process conditions on the performance of epitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandi, S. K.

    1991-01-01

    Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.

  11. InP tunnel junctions for InP/InGaAs tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

    1996-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  12. InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Medelci, N.; Bensaoula, A.; Freundlich, A.; Renaud, P.

    1995-01-01

    We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

  13. Structural properties of H-implanted InP crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bocchi, C.; Franzosi, P.; Lazzarini, L.

    1993-07-01

    H has been implanted in InP crystals at the energy E [equals] 100 keV and at different doses ranging from [sigma] [equals] 1 x 10[sup 13] to [sigma] [equals] 5 x 10[sup 16] cm[sup [minus]2]. The depth dependence of the elastic lattice strain has been investigated by high resolution X-ray diffractometry. The implantation produces a lattice dilation. The strain increases with increasing depth, reaches the maximum at about 0.75 [mu]m, and then decreases rapidly; moreover the maximum strain is proportional to the dose. No extended crystal defects have been detected by transmission electron microscopy up to [sigma] <1 x 10[supmore » 16] cm[sup [minus]2] a buried amorphous layer 28 nm in thickness has been observed at the same depth where the strain is maximum. The thickness of the amorphous layer increases by further increasing the dose and reaches a value of about 0.18 [mu]m for [sigma] [equals] 5 x 10[sup 16] cm[sup [minus]2].« less

  14. Spatial modulation of above-the-gap cathodoluminescence in InP nanowires

    NASA Astrophysics Data System (ADS)

    Tizei, L. H. G.; Zagonel, L. F.; Tencé, M.; Stéphan, O.; Kociak, M.; Chiaramonte, T.; Ugarte, D.; Cotta, M. A.

    2013-12-01

    We report the observation of light emission on wurtzite InP nanowires excited by fast electrons. The experiments were performed in a scanning transmission electron microscope using an in-house-built cathodoluminescence detector. Besides the exciton emission, at 850 nm, emission above the band gap from 400 to 800 nm was observed. In particular, this broad emission presented systematic periodic modulations indicating variations in the local excitation probability. The physical origin of the detected emission is not clear. Measurements of the spatial variation of the above-the-gap emission points to the formation of leaky cavity modes of a plasmonic nature along the nanowire length, indicating the wave nature of the excitation. We propose a phenomenological model, which fits closely the observed spatial variations.

  15. The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1993-01-01

    We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

  16. Micrometer-thickness liquid sheet jets flowing in vacuum

    NASA Astrophysics Data System (ADS)

    Galinis, Gediminas; Strucka, Jergus; Barnard, Jonathan C. T.; Braun, Avi; Smith, Roland A.; Marangos, Jon P.

    2017-08-01

    Thin liquid sheet jet flows in vacuum provide a new platform for performing experiments in the liquid phase, for example X-ray spectroscopy. Micrometer thickness, high stability, and optical flatness are the key characteristics required for successful exploitation of these targets. A novel strategy for generating sheet jets in vacuum is presented in this article. Precision nozzles were designed and fabricated using high resolution (0.2 μm) 2-photon 3D printing and generated 1.49 ± 0.04 μm thickness, stable, and <λ /20-flat jets in isopropanol under normal atmosphere and under vacuum at 5 × 10-1 mbar. The thin sheet technology also holds great promise for advancing the fields of high harmonic generation in liquids, laser acceleration of ions as well as other fields requiring precision and high repetition rate targets.

  17. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

    NASA Astrophysics Data System (ADS)

    Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

    2018-02-01

    We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

  18. Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts.

    PubMed

    Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M

    2009-07-01

    We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations.

  19. Towards the hand-held mass spectrometer: design considerations, simulation, and fabrication of micrometer-scaled cylindrical ion traps

    NASA Astrophysics Data System (ADS)

    Blain, Matthew G.; Riter, Leah S.; Cruz, Dolores; Austin, Daniel E.; Wu, Guangxiang; Plass, Wolfgang R.; Cooks, R. Graham

    2004-08-01

    Breakthrough improvements in simplicity and reductions in the size of mass spectrometers are needed for high-consequence fieldable applications, including error-free detection of chemical/biological warfare agents, medical diagnoses, and explosives and contraband discovery. These improvements are most likely to be realized with the reconceptualization of the mass spectrometer, rather than by incremental steps towards miniaturization. Microfabricated arrays of mass analyzers represent such a conceptual advance. A massively parallel array of micrometer-scaled mass analyzers on a chip has the potential to set the performance standard for hand-held sensors due to the inherit selectivity, sensitivity, and universal applicability of mass spectrometry as an analytical method. While the effort to develop a complete micro-MS system must include innovations in ultra-small-scale sample introduction, ion sources, mass analyzers, detectors, and vacuum and power subsystems, the first step towards radical miniaturization lies in the design, fabrication, and characterization of the mass analyzer itself. In this paper we discuss design considerations and results from simulations of ion trapping behavior for a micrometer scale cylindrical ion trap (CIT) mass analyzer (internal radius r0 = 1 [mu]m). We also present a description of the design and microfabrication of a 0.25 cm2 array of 106 one-micrometer CITs, including integrated ion detectors, constructed in tungsten on a silicon substrate.

  20. An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

    NASA Astrophysics Data System (ADS)

    Ren, Kun; Zheng, Jiachen; Lu, Haiyan; Liu, Jun; Wu, Lishu; Zhou, Wenyong; Cheng, Wei

    2018-05-01

    This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself. Project supported by the National Natural Science Foundation of China (No. 61331006) and the Natural Science Foundation of Zhejiang Province (No. Y14F010017).

  1. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    PubMed

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

  2. Synthesizing and characterization of titanium diboride for composite bipolar plates in PEM fuel cell

    NASA Astrophysics Data System (ADS)

    Duddukuri, Ramesh

    This research deals with the synthesis and characterization of titanium diboride (TiB2) from novel carbon coated precursors. This work provides information on using different boron sources and their effect on the resulting powders of TiB2. The process has two steps in which the oxide powders were first coated with carbon by cracking of a hydrocarbon gas, propylene (C3H6) and then, mixed with boron carbide and boric acid powders in a stoichiometric ratio. These precursors were treated at temperatures in the range of 1200--1400° C for 2 h in flowing Argon atmosphere to synthesize TiB2. The process utilizes a carbothermic reduction reaction of novel carbon coated precursor that has potential of producing high-quality powders (sub-micrometer and high purity). Single phase TiB2 powders produced, were compared with commercially available titanium diboride using X-ray diffraction and Transmission electron microscopy obtained from boron carbide and boric acid containing carbon coated precursor.

  3. Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Chatterjee, B.

    2004-01-01

    Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

  4. Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals.

    PubMed

    Gresback, Ryan; Hue, Ryan; Gladfelter, Wayne L; Kortshagen, Uwe R

    2011-01-12

    Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standard deviation being less than 20% of the mean NC size. Zinc sulfide (ZnS) shells were grown around the plasma-synthesized InP NCs in a liquid phase reaction. Photoluminescence with quantum yields as high as 15% were observed for the InP/ZnS core-shell NCs.

  5. Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

    PubMed Central

    2011-01-01

    Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standard deviation being less than 20% of the mean NC size. Zinc sulfide (ZnS) shells were grown around the plasma-synthesized InP NCs in a liquid phase reaction. Photoluminescence with quantum yields as high as 15% were observed for the InP/ZnS core-shell NCs. PMID:21711589

  6. Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

    NASA Astrophysics Data System (ADS)

    Gresback, Ryan; Hue, Ryan; Gladfelter, Wayne L.; Kortshagen, Uwe R.

    2011-12-01

    Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standard deviation being less than 20% of the mean NC size. Zinc sulfide (ZnS) shells were grown around the plasma-synthesized InP NCs in a liquid phase reaction. Photoluminescence with quantum yields as high as 15% were observed for the InP/ZnS core-shell NCs.

  7. InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications

    DTIC Science & Technology

    1991-06-01

    APLIC ( ATIO NS I:F ( 6 AUTHORiSI VI )N4Wh 7 ERFORMLNG ORGANIZATION NAME(IS) AND ADORE SCISI S Naval Ocean Systems Center San DiegEE, CA 92152-5300(0 9...electronic material for high frequency applications. In0 .5 3Ga. 4 7 As lattice matched to semi-insulating (SI) InP has higher low field mobility , peak...lattice parameter was < ±5 x 10- 4 . The InGaAs mobility at 300 K was 5500 cm 2/V sec. For the device fabrication, the samples were initially cleaned

  8. Measurement of the minority carrier diffusion length and edge surface-recombination velocity in InP

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Hakimzadeh, Roshanak

    1993-01-01

    A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L(sub n)) and the edge surface-recombination velocity (V(sub s)) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure V(sub s), and these values were used in a theoretical expression for normalized EBIC. A fit of the experimental data with this expression enabled us to determine L(sub n).

  9. SOFIA Observations of SN 2010jl: Another Non-Detection of the 9.7 Micrometer Silicate Dust Feature

    NASA Technical Reports Server (NTRS)

    Williams, Brian J.; Fox, Ori D.

    2015-01-01

    We present photometric observations from the Stratospheric Observatory for Infrared Astronomy (SOFIA) at 11.1 micrometers of the Type IIn supernova (SN IIn) 2010jl. The SN is undetected by SOFIA, but the upper limits obtained, combined with new and archival detections from Spitzer at 3.6 and 4.5 micrometers, allow us to characterize the composition of the dust present. Dust in other SN IIn has been shown in previous works to reside in a circumstellar shell of material ejected by the progenitor system in the few millennia prior to explosion. Our model fits show that the dust in the system shows no evidence for the strong, ubiquitous 9.7 micrometer feature from silicate dust, suggesting the presence of carbonaceous grains. The observations are best fit with 0.01-0.05 solar mass of carbonaceous dust radiating at a temperature of approximately 550-620 degrees Kelvin. The dust composition may reveal clues concerning the nature of the progenitor system, which remains ambiguous for this subclass. Most of the single star progenitor systems proposed for SNe IIn, such as luminous blue variables, red supergiants, yellow hypergiants, and B[e] stars, all clearly show silicate dust in their pre-SN outflows. However, this post-SN result is consistent with the small sample of SNe IIn with mid-infrared observations, none of which show signs of emission from silicate dust in their infrared spectra.

  10. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    NASA Technical Reports Server (NTRS)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  11. In situ ion-beam-induced luminescence analysis for evaluating a micrometer-scale radio-photoluminescence glass dosimeter

    NASA Astrophysics Data System (ADS)

    Kawabata, Shunsuke; Kada, Wataru; Parajuli, Raj Kumar; Matsubara, Yoshinori; Sakai, Makoto; Miura, Kenta; Satoh, Takahiro; Koka, Masashi; Yamada, Naoto; Kamiya, Tomihiro; Hanaizumi, Osamu

    2016-06-01

    Micrometer-scale responses of radio-photoluminescence (RPL) glass dosimeters to focused ionized particle radiation were evaluated by combining ion-beam-induced luminescence (IBIL) and proton beam writing (PBW) using a 3 MeV focused proton microbeam. RPL phosphate glass dosimeters doped with ionic Ag or Cu activators at concentrations of 0.2 and 0.1% were fabricated, and their scintillation intensities were evaluated by IBIL spectroscopy under a PBW micropatterning condition. Compared with the Ag-doped dosimeter, the Cu-doped dosimeter was more tolerant of the radiation, while the peak intensity of its luminescence was lower, under the precise dose control of the proton microprobe. Proton-irradiated areas were successfully recorded using these dosimeters and their RPL centers were visualized under 375 nm ultraviolet light. The reproduction of the irradiated region by post-RPL imaging suggests that precise estimation of irradiation dose using microdosimeters can be accomplished by optimizing RPL glass dosimeters for various proton microprobe applications in organic material analysis and in micrometer-scale material modifications.

  12. Upper limits to trace constituents in Jupiter's atmosphere from an analysis of its 5 micrometer spectrum

    NASA Technical Reports Server (NTRS)

    Treffers, R. R.; Larson, H. P.; Fink, U.; Gautier, T. N.

    1978-01-01

    A high-resolution spectrum of Jupiter at 5 micrometers recorded at the Kuiper Airborne Observatory is used to determine upper limits to the column density of 19 molecules. The upper limits to the mixing ratios of SiH4, H2S, HCN, and simple hydrocarbons are discussed with respect to current models of Jupiter's atmosphere. These upper limits are compared to expectations based upon the solar abundance of the elements. This analysis permits upper limit measurements (SiH4), or actual detections (GeH4) of molecules with mixing ratios with hydrogen as low as 10 to the minus 9th power. In future observations at 5 micrometers the sensitivity of remote spectroscopic analyses should permit the study of constituents with mixing ratios as low as 10 to the minus 10th power, which would include the hydrides of such elements as Sn and As as well as numerous organic molecules.

  13. Photoinduced synthesis of single-digit micrometer-size spheroidal calcite composites in the presence of partially hydrolyzed poly(vinyl alcohol)

    NASA Astrophysics Data System (ADS)

    Nishio, Takashi; Naka, Kensuke

    2015-06-01

    Photoinduced crystallization of calcium carbonate (CaCO3), which was based on the photodecarboxylation of ketoprofen (KP, 2-(3-benzoylphyenyl)propionic acid) under alkaline conditions of pH 8.4 and 10 was studied for preparation of CaCO3 composite particles in single-digit micrometer-sizes. In this method, a homogeneous solution comprising KP, calcium chloride, ammonia, and partially hydrolyzed poly(vinyl alcohol) (PVAPS, degree of saponification: 86.5-89.0 mol%) was used as a precursor solution and was exposed to ultraviolet (UV) irradiation for different time periods. After the UV irradiation for 50 min, calcite spheroids in single-digit micrometer-sizes were obtained as major products at pH 8.4. The obtained calcite spheroids contained organic components of about 10 wt%. The comparison of the characteristics of the CaCO3 obtained at pH 8.4 and 10 suggests that the nucleation and crystallization of both vaterite and calcite continuously took place in a moderated supersaturation owing to the CO2 hydration equilibrium as long as the photodecarboxylation of KP continued. Consequently, the aggregation-based crystal growth in the presence of PVAPS seemed to enable the formation of the spheroidal composites of calcite in single-digit micrometer-sizes.

  14. A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 micrometers

    NASA Technical Reports Server (NTRS)

    Chorey, Christopher M.; Ferendeci, Altan; Bhasin, Kul B.

    1988-01-01

    Experimental GaAlAs modulators operating at 0.82 micrometers using a Mach-Zehnder interferometer configuration were designed and fabricated. Coplanar 50 ohm travelling wave microwave electrodes were used to obtain a bandwidth length product of 11.95 GHz-cm. The design, fabrication and dc performance of the GaAlAs travelling wave modulator is presented.

  15. High-temperature degradation-free rapid thermal annealing of GaAs and InP

    NASA Astrophysics Data System (ADS)

    Pearton, Stephen J.; Katz, Avishay; Geva, Michael

    1991-04-01

    Rapid thermal annealing of GaAs and InP within enclosed SiC-coated graphite susceptors is shown to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. Two different types of susceptor were investigated-the first type must be charged with As or P prior to the annealing cycles while the second type incorporates small reservoirs into the susceptor which provide a continuous overpressure of the group V species. Degradation-free annealing of patterned metallized wafers is possible using the latter type of susceptor. The activation of Si and Be implants in GaAs by RTA is also discussed.

  16. Development of InP solid state detector and liquid scintillator containing metal complex for measurement of pp/7Be solar neutrinos and neutrinoless double beta decay

    NASA Astrophysics Data System (ADS)

    Fukuda, Yoshiyuki; Moriyama, Shigetaka

    2012-07-01

    A large volume solid state detector using a semi-insulating Indium Phosphide (InP) wafer have been developed for measurement of pp/7Be solar neutrinos. Basic performance such as the charge collection efficiency and the energy resolution were measured by 60% and 20%, respectively. In order to detect two gammas (115keV and 497keV) from neutrino capture, we have designed hybrid detector which consist InP detector and liquid xenon scintillator for IPNOS experiment. New InP detector with thin electrode (Cr 50Å- Au 50Å). For another possibility, an organic liquid scintillator containing indium complex and zirconium complex were studied for a measurement of low energy solar neutrinos and neutrinosless double beta decay, respectively. Benzonitrile was chosen as a solvent because of good solubility for the quinolinolato complexes (2 wt%) and of good light yield for the scintillation induced by gamma-ray irradiation. The photo-luminescence emission spectra of InQ3 and ZrQ4 in benzonitrile was measured and liquid scintillator cocktail using InQ3 and ZrQ4 (50mg) in benzonitrile solutions (20 mL) with secondary scintillators with PPO (100mg) and POPOP (10mg) was made. The energy spectra of incident gammas were measured, and they are first results of the gamma-ray energy spectra using luminescent of metal complexes.

  17. Kinetics of low pressure CVD growth of SiO2 on InP and Si

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Lile, D. L.

    1988-01-01

    The kinetics of low pressure CVD growth of SiO2 from SiH4 and O2 has been investigated for the case of an indirect (remote) plasma process. Homogeneous (gas phase) and heterogeneous operating ranges have been experimentally identified. The process was shown to be consistent within the heterogeneous surface-reaction dominated range of operation. A kinetic rate equation is given for growth at 14 W RF power input and 400 mtorr total pressure on both InP and Si substrates. The process exhibits an activation energy of 8.4 + or - 0.6 kcal/mol.

  18. Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

    NASA Technical Reports Server (NTRS)

    1987-01-01

    A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

  19. Polarization-analyzing circuit on InP for integrated Stokes vector receiver.

    PubMed

    Ghosh, Samir; Kawabata, Yuto; Tanemura, Takuo; Nakano, Yoshiaki

    2017-05-29

    Stokes vector modulation and direct detection (SVM/DD) has immense potentiality to reduce the cost burden for the next-generation short-reach optical communication networks. In this paper, we propose and demonstrate an InGaAsP/InP waveguide-based polarization-analyzing circuit for an integrated Stokes vector (SV) receiver. By transforming the input state-of-polarization (SOP) and projecting its SV onto three different vectors on the Poincare sphere, we show that the actual SOP can be retrieved by simple calculation. We also reveal that this projection matrix has a flexibility and its deviation due to device imperfectness can be calibrated to a certain degree, so that the proposed device would be fundamentally robust against fabrication errors. A proof-of-concept photonic integrated circuit (PIC) is fabricated on InP by using half-ridge waveguides to successfully demonstrate detection of different SOPs scattered on the Poincare sphere.

  20. Synthesis and characterization of magnetic and non-magnetic core-shell polyepoxide micrometer-sized particles of narrow size distribution.

    PubMed

    Omer-Mizrahi, Melany; Margel, Shlomo

    2009-01-15

    Core polystyrene microspheres of narrow size distribution were prepared by dispersion polymerization of styrene in a mixture of ethanol and 2-methoxy ethanol. Uniform polyglycidyl methacrylate/polystyrene core-shell micrometer-sized particles were prepared by emulsion polymerization at 73 degrees C of glycidyl methacrylate in the presence of the core polystyrene microspheres. Core-shell particles with different properties (size, surface morphology and composition) have been prepared by changing various parameters belonging to the above seeded emulsion polymerization process, e.g., volumes of the monomer glycidyl methacrylate and the crosslinker monomer ethylene glycol dimethacrylate. Magnetic Fe(3)O(4)/polyglycidyl methacrylate/polystyrene micrometer-sized particles were prepared by coating the former core-shell particles with magnetite nanoparticles via a nucleation and growth mechanism. Characterization of the various particles has been accomplished by routine methods such as light microscopy, SEM, FTIR, BET and magnetic measurements.

  1. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  2. Programmable micrometer-sized motor array based on live cells.

    PubMed

    Xie, Shuangxi; Wang, Xiaodong; Jiao, Niandong; Tung, Steve; Liu, Lianqing

    2017-06-13

    Trapping and transporting microorganisms with intrinsic motility are important tasks for biological, physical, and biomedical applications. However, fast swimming speed makes the manipulation of these organisms an inherently challenging task. In this study, we demonstrated that an optoelectrical technique, namely, optically induced dielectrophoresis (ODEP), could effectively trap and manipulate Chlamydomonas reinhardtii (C. reinhardtii) cells swimming at velocities faster than 100 μm s -1 . Furthermore, live C. reinhardtii cells trapped by ODEP can form a micrometer-sized motor array. The rotating frequency of the cells ranges from 50 to 120 rpm, which can be reversibly adjusted with a fast response speed by varying the optical intensity. Functional flagella have been demonstrated to play a decisive role in the rotation. The programmable cell array with a rotating motion can be used as a bio-micropump to drive the liquid flow in microfludic chips and may shed new light on bio-actuation.

  3. One-Step Sub-micrometer-Scale Electrohydrodynamic Inkjet Three-Dimensional Printing Technique with Spontaneous Nanoscale Joule Heating.

    PubMed

    Zhang, Bin; Seong, Baekhoon; Lee, Jaehyun; Nguyen, VuDat; Cho, Daehyun; Byun, Doyoung

    2017-09-06

    A one-step sub-micrometer-scale electrohydrodynamic (EHD) inkjet three-dimensional (3D)-printing technique that is based on the drop-on-demand (DOD) operation for which an additional postsintering process is not required is proposed. Both the numerical simulation and the experimental observations proved that nanoscale Joule heating occurs at the interface between the charged silver nanoparticles (Ag-NPs) because of the high electrical contact resistance during the printing process; this is the reason why an additional postsintering process is not required. Sub-micrometer-scale 3D structures were printed with an above-35 aspect ratio via the use of the proposed printing technique; furthermore, it is evident that the designed 3D structures such as a bridge-like shape can be printed with the use of the proposed printing technique, allowing for the cost-effective fabrication of a 3D touch sensor and an ultrasensitive air flow-rate sensor. It is believed that the proposed one-step printing technique may replace the conventional 3D conductive-structure printing techniques for which a postsintering process is used because of its economic efficiency.

  4. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  5. Enhanced Photocatalytic Reduction of CO2 to CO through TiO2 Passivation of InP in Ionic Liquids.

    PubMed

    Zeng, Guangtong; Qiu, Jing; Hou, Bingya; Shi, Haotian; Lin, Yongjing; Hettick, Mark; Javey, Ali; Cronin, Stephen B

    2015-09-21

    A robust and reliable method for improving the photocatalytic performance of InP, which is one of the best known materials for solar photoconversion (i.e., solar cells). In this article, we report substantial improvements (up to 18×) in the photocatalytic yields for CO2 reduction to CO through the surface passivation of InP with TiO2 deposited by atomic layer deposition (ALD). Here, the main mechanisms of enhancement are the introduction of catalytically active sites and the formation of a pn-junction. Photoelectrochemical reactions were carried out in a nonaqueous solution consisting of ionic liquid, 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]BF4), dissolved in acetonitrile, which enables CO2 reduction with a Faradaic efficiency of 99% at an underpotential of +0.78 V. While the photocatalytic yield increases with the addition of the TiO2 layer, a corresponding drop in the photoluminescence intensity indicates the presence of catalytically active sites, which cause an increase in the electron-hole pair recombination rate. NMR spectra show that the [EMIM](+) ions in solution form an intermediate complex with CO2(-), thus lowering the energy barrier of this reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Doping inhomogeneities and behavior of compensation of n-type GaAs and InP

    NASA Astrophysics Data System (ADS)

    Wruck, D.; Knauer, A.

    1988-11-01

    A comparison was made of the distributions of Sn and of the chalcogens S and Se in InP and GaAs, determined from infrared absorption and the Hall effect. An analysis was made of the possible cause of the difference between the values of the degree of compensation determined by the two methods.

  7. Method to pattern <10 micrometer conducting and passivating features on 3D substrates for implantable devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tolosa, Vanessa; Pannu, Satinderpall S.; Sheth, Heeral

    2017-07-04

    An implantable device has a cylindrical base, at least one electrode on the cylindrical base, at least one electrically conducting lead on the cylindrical base connected to the electrode wherein the electrically conducting lead has a feature size of <10 micrometers. A protective coating on the cylindrical base covers the at least one electrically conducting lead.

  8. Opto-mechanical subsystem of a 10 micrometer wavelength receiver terminal. Waveguide laser local oscillator. Servo system

    NASA Technical Reports Server (NTRS)

    1975-01-01

    An engineering model opto-mechanical subsystem for a 10.6-micrometer laser heterodyne receiver is developed, and a CO2 waveguide local oscillator and servo electronics are provided for the receiver. Design goals are presented for the subsystems and overall package design is described. Thermal and mechanical distortion loading tests were performed and the results are included.

  9. Pluto-Charon: Infrared Reflectance from 3.6 to 8.0 Micrometers

    NASA Technical Reports Server (NTRS)

    Cruikshank, Dale P.; Emery, Joshua P.; Stansberry, John A.; VanCleve, Jeffrey E.

    2004-01-01

    We have measured the spectral reflectance of the Pluto-Charon pair at 3.6, 4.5, 5.8, and 8.0 micrometers with the Infrared Array Camera (IRAC) (G. G. Fazzio et al. Ap.J.Supp. 154, 10-17, 2004) on the Spitzer Space Telescope (STS), at eight different longitudes that cover a full rotation of the planet. STS does not have sufficient resolution to separate the light from the planet and the satellite. The image of the Pluto-Charon pair is clearly visible at each of the four wavelengths. We will discuss the spectral reflectance in terms of models that include the known components of Pluto and Charon s surfaces, and evidence for diurnal variations.

  10. Portable Speech Synthesizer

    NASA Technical Reports Server (NTRS)

    Leibfritz, Gilbert H.; Larson, Howard K.

    1987-01-01

    Compact speech synthesizer useful traveling companion to speech-handicapped. User simply enters statement on board, and synthesizer converts statement into spoken words. Battery-powered and housed in briefcase, easily carried on trips. Unit used on telephones and face-to-face communication. Synthesizer consists of micro-computer with memory-expansion module, speech-synthesizer circuit, batteries, recharger, dc-to-dc converter, and telephone amplifier. Components, commercially available, fit neatly in 17-by 13-by 5-in. briefcase. Weighs about 20 lb (9 kg) and operates and recharges from ac receptable.

  11. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

  12. The relationship of the lunar regolith less than 10 micrometer fraction and agglutinates. I - A model for agglutinate formation and some indirect supportive evidence

    NASA Technical Reports Server (NTRS)

    Papike, J. J.; Simon, S. B.; White, C.; Laul, J. C.

    1982-01-01

    The first part of a study of the 'less than 10 micrometer' soil fraction and agglutinates is concerned with the chemical systematics of the considered fraction of lunar soils, taking into account a model for agglutinate formation based on the fusion of the finest fraction (FFF). Attention is given to some evidence which supports the FFF model. The evidence is based on some indirect approaches to an estimation of the composition of the fused soil component. It is found that the 'less than 10 micrometer' soil fraction from all Apollo sites except Apollo 16 (which can be explained) is more feldspathic and enriched in incompatible elements (e.g., K and Th) than the bulk soil. It is concluded that these systematics result from simple comminution in which feldspar breaks down to finer sizes than pyroxene and olivine and the fine-grained incompatible-element-enriched mesostasis concentrates in the 'less than 10 micrometer' soil fraction.

  13. Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

    PubMed

    Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

    2016-12-01

    Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

  14. Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition

    NASA Astrophysics Data System (ADS)

    Sato, Taketomo; Kaneshiro, Chinami; HiroshiOkada, HiroshiOkada; Hasegawa, Hideki

    1999-04-01

    Attempts were made to form regular arrays of size- andposition-controlled Pt-dots on GaAs and InP by combining an insitu electrochemical process with the electron beam (EB)lithography. This utilizes the precipitation of Pt nano-particles atthe initial stage of electrodeposition. First, electrochemicalconditions were optimized in the mode of self-assembled dot arrayformation on unpatterned substrates. Minimum in-plane dot diameters of22 nm and 26 nm on GaAs and InP, respectively, were obtained underthe optimal pulsed mode. Then, Pt dots were selectively formed onpatterned substrates with open circular windows formed by EBlithography, thereby realizing dot-position control. The Pt dot wasfound to have been deposited at the center of each open window, andthe in-plane diameter of the dot could be controlled by the number,width and period of the pulse-waveform applied to substrates. Aminimum diameter of 20 nm was realized in windows with a diameter of100 nm, using a single pulse. Current-voltage (I-V)measurements using an atomic force microscopy (AFM) system with aconductive probe indicated that each Pt dot/n-GaAs contact possessed ahigh Schottky barrier height of about 1 eV.

  15. Portable 4.6 Micrometers Laser Absorption Spectrometer for Carbon Monoxide Monitoring and Fire Detection

    NASA Technical Reports Server (NTRS)

    Briggs, Ryan M.; Frez, Clifford; Forouhar, Siamak; May, Randy D.; Ruff, Gary A.

    2013-01-01

    The air quality aboard manned spacecraft must be continuously monitored to ensure crew safety and identify equipment malfunctions. In particular, accurate real-time monitoring of carbon monoxide (CO) levels helps to prevent chronic exposure and can also provide early detection of combustion-related hazards. For long-duration missions, environmental monitoring grows in importance, but the mass and volume of monitoring instruments must be minimized. Furthermore, environmental analysis beyond low-Earth orbit must be performed in-situ, as sample return becomes impractical. Due to their small size, low power draw, and performance reliability, semiconductor-laser-based absorption spectrometers are viable candidates for this purpose. To reduce instrument form factor and complexity, the emission wavelength of the laser source should coincide with strong fundamental absorption lines of the target gases, which occur in the 3 to 5 micrometers wavelength range for most combustion products of interest, thereby reducing the absorption path length required for low-level concentration measurements. To address the needs of current and future NASA missions, we have developed a prototype absorption spectrometer using a semiconductor quantum cascade laser source operating near 4.6 micrometers that can be used to detect low concentrations of CO with a compact single-pass absorption cell. In this study, we present the design of the prototype instrument and report on measurements of CO emissions from the combustion of a variety of aerospace plastics.

  16. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  17. Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (1 1 1) oriented Si, GaAs and InP substrates by electrochemical deposition method

    NASA Astrophysics Data System (ADS)

    Pham, Huyen T.; Nguyen, Tam D.; Tran, Dat Q.; Akabori, Masashi

    2017-05-01

    ZnO semiconductors, especially in form of nanomaterials, possess many excellent properties and have been employed in many applications. In this article, we reported the selective area growth of ZnO nanowires on different (1 1 1) oriented Si, GaAs, and first time on InP substrates by electrochemical deposition method without any seed layers, using zinc nitrate hexahydrate precursor in the presence of hexamethylenetetramine. The position, density and orientation of such ZnO nanowires were controlled by the substrate patterning technique using electron-beam lithography. As-synthesized ZnO nanowires grown on patterned substrates show smaller diameter, higher density and better orientation, compared to the one grown on unpatterned substrates. In particular, the ZnO nanowires grown on GaAs patterned substrate indicate the best morphological property, with the average diameter, length and density of about 100 nm, 2.4 µm and 35 µm-2, respectively. The x-ray diffraction and Raman scattering also demonstrate high crystalline quality of our ZnO nanowires. Moreover, as-reported ZnO nanowires are also conductive, which would allow their use in field-effect transistor and other potential nanoscale device applications.

  18. Single-particle characterization of ice-nucleating particles and ice particle residuals sampled by three different techniques

    NASA Astrophysics Data System (ADS)

    Worringen, A.; Kandler, K.; Benker, N.; Dirsch, T.; Mertes, S.; Schenk, L.; Kästner, U.; Frank, F.; Nillius, B.; Bundke, U.; Rose, D.; Curtius, J.; Kupiszewski, P.; Weingartner, E.; Vochezer, P.; Schneider, J.; Schmidt, S.; Weinbruch, S.; Ebert, M.

    2015-04-01

    -400 nm in geometric diameter. In a few cases, a second supermicron maximum was identified. Soot/carbonaceous material and metal oxides were present mainly in the sub-micrometer range. Silicates and Ca-rich particles were mainly found with diameters above 1 μm (using ISI and FINCH), in contrast to the Ice-CVI which also sampled many submicron particles of both groups. Due to changing meteorological conditions, the INP/IPR composition was highly variable if different samples were compared. Thus, the observed discrepancies between the different separation techniques may partly result from the non-parallel sampling. The differences of the particle group relative number abundance as well as the mixing state of INP/IPR clearly demonstrate the need of further studies to better understand the influence of the separation techniques on the INP/IPR chemical composition. Also, it must be concluded that the abundance of contamination artifacts in the separated INP and IPR is generally large and should be corrected for, emphasizing the need for the accompanying chemical measurements. Thus, further work is needed to allow for routine operation of the three separation techniques investigated.

  19. Rare-Earth Oxide Ion (Tm3+, Ho3+, and U3+) Doped Glasses and Fibres for 1.8 to 4 Micrometer Coherent and Broadband Sources

    DTIC Science & Technology

    2006-07-24

    oxide ( TeO2 ) , fluorine- containing silicate (SiOF2) and germanate (GeOF2) glass hosts for each dopant by characterising the spectroscopic properties...Earth Oxide Ion (Tm3+, Ho3+, And U3+) Doped Glasses And Fibres For 1.8 To 4 Micrometer Coherent And Broadband Sources 5c. PROGRAM ELEMENT NUMBER 5d...Rare-earth oxide ion (Tm3+, Ho3+, and U3+) doped glasses and fibres for 1.8 to 4 micrometer coherent and broadband sources Report prepared

  20. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    NASA Astrophysics Data System (ADS)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  1. High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Weinberg, Irv; Scheiman, Dave; Vargas-Aburto, Carlos; Uribe, Roberto

    1995-01-01

    InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  2. High and low energy proton radiation damage in p/n InP MOCVD solar cells

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Weinberg, Irving; Scheiman, Dave; Vargas-Aburto, Carlos

    1995-01-01

    InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  3. Mode-locked laser with pulse interleavers in a monolithic photonic integrated circuit for millimeter wave and terahertz carrier generation.

    PubMed

    Lo, Mu-Chieh; Guzmán, Robinson; Gordón, Carlos; Carpintero, Guillermo

    2017-04-15

    This Letter presents a photonics-based millimeter wave and terahertz frequency synthesizer using a monolithic InP photonic integrated circuit composed of a mode-locked laser (MLL) and two pulse interleaver stages to multiply the repetition rate frequency. The MLL is a multiple colliding pulse MLL producing an 80 GHz repetition rate pulse train. Through two consecutive monolithic pulse interleaver structures, each doubling the repetition rate, we demonstrate the achievement of 160 and 320 GHz. The fabrication was done on a multi-project wafer run of a generic InP photonic technology platform.

  4. Optical investigation of InAs quantum dashes grown on InP(0 0 1) vicinal substrate

    NASA Astrophysics Data System (ADS)

    Besahraoui, F.; Bouslama, M.; Saidi, F.; Bouzaiene, L.; Hadj Alouane, M. H.; Maaref, H.; Chauvin, N.; Gendry, M.; Lounis, Z.; Ghaffour, M.

    2014-01-01

    We investigate with photoluminescence (PL) measurements the optoelectronic properties of self-organized InAs quantum dots (QDs) grown on nominal InP(0 0 1) substrate. InAs/InP(0 0 1) QDs are grown by Molecular Beam Epitaxy (MBE) method with optimized conditions in Stranski-Krastanov regime. A lateral coupling behavior was shown by photoluminescence spectroscopy. This phenomena is considered as a degradation source of the optoelectronic properties of InAs/InP(0 0 1) QDs used in lasers applications. In order to overcome this disadvantage behavior, we have studied the optical properties of InAs quantum islands (QIs) grown on vicinal InP(0 0 1) with 2° off miscut angle toward the [1 1 0] direction. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum nanostructures have quantum dashes (QDas) form elongated in [1-10] direction. From excitation density PL measurements, we have evidenced that the different observed PL peaks are attributed to the emission of InAs QDas of different size. The lateral coupling behavior is completely eliminated in the case of this sample. The temperature-dependent PL measurements show a good thermal stability and an emission wavelength at room temperature around 1.55 μm of the vicinal sample. All these properties prove that this sample possess favorable characteristics for microlasers based devices functioning at room temperature and for optical telecommunication with long range weapon. The broad emission range observed at 300 K of the vicinal sample gives the possibility to use it as an active zone in solar cells and in infrared photodectectors of high optical gain and excellent sensitivity on a wide energy range.

  5. Sub-4 nm PtZn Intermetallic Nanoparticles for Enhanced Mass and Specific Activities in Catalytic Electrooxidation Reaction

    DOE PAGES

    Qi, Zhiyuan; Xiao, Chaoxian; Liu, Cong; ...

    2017-03-08

    Atomically ordered intermetallic nanoparticles (iNPs) have sparked considerable interest in fuel cell applications by virtue of their exceptional electronic and structural properties. However, the synthesis of small iNPs in a controllable manner remains a formidable challenge because of the high temperature generally required in the formation of intermetallic phases. Here in this paper we report a general method for the synthesis of PtZn iNPs (3.2 ± 0.4 nm) on multiwalled carbon nanotubes (MWNT) via a facile and capping agent free strategy using a sacrificial mesoporous silica (mSiO 2) shell. The as-prepared PtZn iNPs exhibited ca. 10 times higher mass activitymore » in both acidic and basic solution toward the methanol oxidation reaction (MOR) compared to larger PtZn iNPs synthesized on MWNT without the mSiO 2 shell. Density functional theory (DFT) calculations predict that PtZn systems go through a “non-CO” pathway for MOR because of the stabilization of the OH* intermediate by Zn atoms, while a pure Pt system forms highly stable COH* and CO* intermediates, leading to catalyst deactivation. Experimental studies on the origin of the backward oxidation peak of MOR coincide well with DFT predictions. Moreover, the calculations demonstrate that MOR on smaller PtZn iNPs is energetically more favorable than larger iNPs, due to their high density of corner sites and lower-lying energetic pathway. Therefore, smaller PtZn iNPs not only increase the number but also enhance the activity of the active sites in MOR compared with larger ones. This work opens a new avenue for the synthesis of small iNPs with more undercoordinated and enhanced active sites for fuel cell applications.« less

  6. Sub-4 nm PtZn Intermetallic Nanoparticles for Enhanced Mass and Specific Activities in Catalytic Electrooxidation Reaction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qi, Zhiyuan; Xiao, Chaoxian; Liu, Cong

    2017-03-22

    Atomically ordered intermetallic nanoparticles (iNPs) have sparked considerable interest in fuel cell applications by virtue of their exceptional electronic and structural properties. However, the synthesis of small iNPs in a controllable manner remains a formidable challenge because of the high temperature generally required in the formation of intermetallic phases. Here we report a general method for the synthesis of PtZn. iNPs (3.2 +/- 0.4 nm) on multiwalled carbon nanotubes (MWNT) via a facile and capping agent free strategy using a sacrificial mesoporous silica (mSiO(2)) shell. The as-prepared PtZn iNPs exhibited ca. 10 times higher mass activity in both acidic andmore » basic solution toward the methanol oxidation reaction (MOR) compared to larger PtZn iNPs synthesized on MWNT without the mSiO2 shell. Density functional theory (DFT) calculations predict that PtZn systems go through a "non-CO" pathway for MOR because of the stabilization of the OH* intermediate by Zn atoms, while a pure Pt system forms highly stable COH* and CO* intermediates, leading to catalyst deactivation. Experimental studies on the origin of the backward oxidation peak of MOR coincide well with DFT predictions. Moreover, the calculations demonstrate that MOR on smaller PtZn iNPs is energetically more favorable than larger iNPs, due to their high density of corner sites and lower-lying energetic pathway. Therefore, smaller PtZn iNPs not only increase the number but also enhance the activity of the active sites in MOR compared with larger ones. This work opens a new avenue for the synthesis of small iNPs with more undercoordinated and enhanced active sites for fuel cell applications.« less

  7. Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

    NASA Technical Reports Server (NTRS)

    Deal, W. R.; Din, S.; Padilla, J.; Radisic, V.; Mei, G.; Yoshida, W.; Liu, P. S.; Uyeda, J.; Barsky, M.; Gaier, T.; hide

    2006-01-01

    In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.

  8. Perturbation of bacterial ice nucleation activity by a grass antifreeze protein.

    PubMed

    Tomalty, Heather E; Walker, Virginia K

    2014-09-26

    Certain plant-associating bacteria produce ice nucleation proteins (INPs) which allow the crystallization of water at high subzero temperatures. Many of these microbes are considered plant pathogens since the formed ice can damage tissues, allowing access to nutrients. Intriguingly, certain plants that host these bacteria synthesize antifreeze proteins (AFPs). Once freezing has occurred, plant AFPs likely function to inhibit the growth of large damaging ice crystals. However, we postulated that such AFPs might also serve as defensive mechanisms against bacterial-mediated ice nucleation. Recombinant AFP derived from the perennial ryegrass Lolium perenne (LpAFP) was combined with INP preparations originating from the grass epiphyte, Pseudomonas syringae. The presence of INPs had no effect on AFP activity, including thermal hysteresis and ice recrystallization inhibition. Strikingly, the ice nucleation point of the INP was depressed up to 1.9°C in the presence of LpAFP, but a recombinant fish AFP did not lower the INP-imposed freezing point. Assays with mutant LpAFPs and the visualization of bacterially-displayed fluorescent plant AFP suggest that INP and LpAFP can interact. Thus, we postulate that in addition to controlling ice growth, plant AFPs may also function as a defensive strategy against the damaging effects of ice-nucleating bacteria. Crown Copyright © 2014. Published by Elsevier Inc. All rights reserved.

  9. Sub-micrometer Geometrically Encoded Fluorescent Barcodes Self-Assembled from DNA

    PubMed Central

    Lin, Chenxiang; Jungmann, Ralf; Leifer, Andrew M.; Li, Chao; Levner, Daniel; Church, George M.; Shih, William M.; Yin, Peng

    2012-01-01

    The identification and differentiation of a large number of distinct molecular species with high temporal and spatial resolution is a major challenge in biomedical science. Fluorescence microscopy is a powerful tool, but its multiplexing ability is limited by the number of spectrally distinguishable fluorophores. Here we use DNA-origami technology to construct sub-micrometer nanorods that act as fluorescent barcodes. We demonstrate that spatial control over the positioning of fluorophores on the surface of a stiff DNA nanorod can produce 216 distinct barcodes that can be unambiguously decoded using epifluorescence or total internal reflection fluorescence (TIRF) microscopy. Barcodes with higher spatial information density were demonstrated via the construction of super-resolution barcodes with features spaced by ~40 nm. One species of the barcodes was used to tag yeast surface receptors, suggesting their potential applications as in situ imaging probes for diverse biomolecular and cellular entities in their native environments. PMID:23000997

  10. Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

    PubMed

    Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

    2012-12-17

    A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

  11. Pneumatic System for Concentration of Micrometer-Size Lunar Soil

    NASA Technical Reports Server (NTRS)

    McKay, David; Cooper, Bonnie

    2012-01-01

    A report describes a size-sorting method to separate and concentrate micrometer- size dust from a broad size range of particles without using sieves, fluids, or other processes that may modify the composition or the surface properties of the dust. The system consists of four processing units connected in series by tubing. Samples of dry particulates such as lunar soil are introduced into the first unit, a fluidized bed. The flow of introduced nitrogen fluidizes the particulates and preferentially moves the finer grain sizes on to the next unit, a flat plate impactor, followed by a cyclone separator, followed by a Nuclepore polycarbonate filter to collect the dust. By varying the gas flow rate and the sizes of various orifices in the system, the size of the final and intermediate particles can be varied to provide the desired products. The dust can be collected from the filter. In addition, electron microscope grids can be placed on the Nuclepore filter for direct sampling followed by electron microscope characterization of the dust without further handling.

  12. Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

    NASA Astrophysics Data System (ADS)

    Gocalinska, A.; Rubini, S.; Pelucchi, E.

    2016-10-01

    The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.

  13. Local-Scale Simulations of Nucleate Boiling on Micrometer-Featured Surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sitaraman, Hariswaran; Moreno, Gilberto; Narumanchi, Sreekant V

    2017-07-12

    A high-fidelity computational fluid dynamics (CFD)-based model for bubble nucleation of the refrigerant HFE7100 on micrometer-featured surfaces is presented in this work. The single-fluid incompressible Navier-Stokes equations, along with energy transport and natural convection effects are solved on a featured surface resolved grid. An a priori cavity detection method is employed to convert raw profilometer data of a surface into well-defined cavities. The cavity information and surface morphology are represented in the CFD model by geometric mesh deformations. Surface morphology is observed to initiate buoyancy-driven convection in the liquid phase, which in turn results in faster nucleation of cavities. Simulationsmore » pertaining to a generic rough surface show a trend where smaller size cavities nucleate with higher wall superheat. This local-scale model will serve as a self-consistent connection to larger device scale continuum models where local feature representation is not possible.« less

  14. How the Emitted Size Distribution and Mixing State of Feldspar Affect Ice Nucleating Particles in a Global Model

    NASA Technical Reports Server (NTRS)

    Perlwitz, Jan P.; Fridlind, Ann M.; Knopf, Daniel A.; Miller, Ron L.; García-Pando, Carlos Perez

    2017-01-01

    The effect of aerosol particles on ice nucleation and, in turn, the formation of ice and mixed phase clouds is recognized as one of the largest sources of uncertainty in climate prediction. We apply an improved dust mineral specific aerosol module in the NASA GISS Earth System ModelE, which takes into account soil aggregates and their fragmentation at emission as well as the emission of large particles. We calculate ice nucleating particle concentrations from K-feldspar abundance for an active site parameterization for a range of activation temperatures and external and internal mixing assumption. We find that the globally averaged INP concentration is reduced by a factor of two to three, compared to a simple assumption on the size distribution of emitted dust minerals. The decrease can amount to a factor of five in some geographical regions. The results vary little between external and internal mixing and different activation temperatures, except for the coldest temperatures. In the sectional size distribution, the size range 24 micrometer contributes the largest INP number.

  15. Synthesis of indium phosphide nanocrystals by sonochemical method and survey of optical properties

    NASA Astrophysics Data System (ADS)

    Trung, Ho Minh; Duy Thien, Nguyen; Van Vu, Le; Long, Nguyen Ngoc; Hieu, Truong Kim

    2013-10-01

    Indium phosphide semiconductor materials (InP) have various applications in the field of semiconductor optoelectronics because of its advantages. But the making of this material is difficult due to the very weak chemical activity of In element. In this report we present a simple method to synthesize InP nanocrystals from inorganic precursors such as indium chloride (InCl3), yellow phosphorus (P4), reduction agent NaBH4 at low temperature with the aid of ultrasound. Structural, morphological and optical properties of the formed InP nanocrystals were examined by transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersed X-ray analysis (EDS), Raman scattering, absorption and photoluminscence (PL) spectroscopy. After the surface treatment of InP nanocrystals with liquid hydrofluoric (HF) acid, the luminescence spectra have an enhanced intensity and consist of the peaks in the region from 500 nm to 700 nm. The intensity of these peaks strongly depends on the concentration and etching time of HF. International Workshop on Advanced Materials and Nanotechnology 2012 (IWAMN 2012).

  16. Discovery of natural gain amplification in the 10-micrometer carbon dioxide laser bands on Mars - A natural laser

    NASA Technical Reports Server (NTRS)

    Mumma, M. J.; Buhl, D.; Chin, G.; Deming, D.; Espenak, F.; Kostiuk, T.; Zipoy, D.

    1981-01-01

    Fully resolved intensity profiles of various lines in the carbon dioxide band at 10.4 micrometers have been measured on Mars with an infrared heterodyne spectrometer. Analysis of the line shapes shows that the Mars atmosphere exhibits positive gain in these lines. The detection of natural optical gain amplification enables identification of these lines as a definite natural laser.

  17. Infrared receivers for low background astronomy: Incoherent detectors and coherent devices from one micrometer to one millimeter

    NASA Technical Reports Server (NTRS)

    Boggess, N. W.; Greenberg, L. T.; Hauser, M. G.; Houck, J. R.; Low, F. J.; Mccreight, C. R.; Rank, D. M.; Richards, P. L.; Weiss, R.

    1979-01-01

    The status of incoherent detectors and coherent receivers over the infrared wavelength range from one micrometer to one millimeter is described. General principles of infrared receivers are included, and photon detectors, bolometers, coherent receivers, and important supporting technologies are discussed, with emphasis on their suitability for low background astronomical applications. Broad recommendations are presented and specific opportunities are identified for development of improved devices.

  18. Stereo matching image processing by synthesized color and the characteristic area by the synthesized color

    NASA Astrophysics Data System (ADS)

    Akiyama, Akira; Mutoh, Eiichiro; Kumagai, Hideo

    2014-09-01

    We have developed the stereo matching image processing by synthesized color and the corresponding area by the synthesized color for ranging the object and image recognition. The typical images from a pair of the stereo imagers may have some image disagreement each other due to the size change, missed place, appearance change and deformation of characteristic area. We constructed the synthesized color and corresponding color area with the same synthesized color to make the distinct stereo matching. We constructed the synthesized color and corresponding color area with the same synthesized color by the 3 steps. The first step is making binary edge image by differentiating the focused image from each imager and verifying that differentiated image has normal density of frequency distribution to find the threshold level of binary procedure. We used Daubechies wavelet transformation for the procedures of differentiating in this study. The second step is deriving the synthesized color by averaging color brightness between binary edge points with respect to horizontal direction and vertical direction alternatively. The averaging color procedure was done many times until the fluctuation of averaged color become negligible with respect to 256 levels in brightness. The third step is extracting area with same synthesized color by collecting the pixel of same synthesized color and grouping these pixel points by 4 directional connectivity relations. The matching areas for the stereo matching are determined by using synthesized color areas. The matching point is the center of gravity of each synthesized color area. The parallax between a pair of images is derived by the center of gravity of synthesized color area easily. The experiment of this stereo matching was done for the object of the soccer ball toy. From this experiment we showed that stereo matching by the synthesized color technique are simple and effective.

  19. Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

    PubMed

    Wheeler, Dustin D; Willmering, Matthew M; Sesti, Erika L; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J; Hayes, Sophia E

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈S z 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, E g . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k=0 bandedge, we define a new parameter, S opt (E ph ). Incorporating this revised element into the expression for 〈S z 〉, we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects. Copyright © 2016 Elsevier Inc. All rights reserved.

  20. Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP

    NASA Astrophysics Data System (ADS)

    Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈Sz 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for 〈Sz 〉 , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

  1. An advanced communications synthesizer

    NASA Astrophysics Data System (ADS)

    Scherer, Ernst F.

    1994-02-01

    With the proliferation of smaller and lower cost EHF terminals, the fast-hopping microwave synthesizer subsystem is rapidly becoming the limiting factor for further size and cost reduction. A new approach, based on a high-speed direct digital synthesizer (DDS) and a very fast voltage controlled oscillator (VCO) tracking loop, has yielded a highly integrable design with true low-cost potential. A frequency range of 1 to 20 GHz can be covered by a simple substitution of the VCO module. This advanced synthesizer realization promises a generic solution to a large class of synthesizer requirements, greatly facilitating standardization and promoting modular system concepts.

  2. Supernova Dust at Sub-micrometer Scales

    NASA Astrophysics Data System (ADS)

    Nittler, Larry; Stroud, R. M.

    2006-06-01

    Meteorites contain nanometer to micrometer stardust grains, which formed in pre-solar generations of stars and exhibit large isotopic anomalies that reflect the nuclear processes that occurred in their individual parent stars [1]. Supernovae of Type II have been identified as the sources of much of the stardust, including grains of SiC, Si3N4, graphite and Mg2SiO4. Although, the isotopic compositions of many elements in these grains point unambiguously to supernova nucleosynthesis processes [2], the data require extensive and heterogeneous mixing of disparate nuclear burning zones. A recent study found that individual 200 nm TiC sub-grains within a 12 micron supernova graphite grain have uniform Ti isotopic composition but a range of O isotopic ratios [3]. New microanalysis techniques allow us to correlate the physical microstructures of supernova grains with isotopic composition, e.g., SiC and Si3N4, providing a sub-micron view of condensation processes in supernova ejecta. Results on two SiC grains indicate that micron-sized SiC grains from supernovae consist of assemblages of smaller crystallites with some evidence of radiation and/or shock processing. This is in strong contrast to SiC grains from AGB stars, which are typically single euhedral crystals [4]. The Si, C and N isotopic compositions of the grains are highly uniform, in contrast to the model of [5], which predicts strong isotopic gradients in supernova-derived SiC grains.This work is supported by NASA.[1] Clayton D. D. and Nittler L. R. (2004) ARAA, 42, 39-78.[2] Nittler L. R., et al. (1996) ApJ, 462, L31-34.[3] Stadermann F. J., et al. (2005) GCA, 69, 177-188.[4] Daulton T. L., et al. (2002) Science, 296, 1852-1855.[5] Deneault E. A.-N., et al. (2003) ApJ, 594, 312-325.

  3. Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE

    NASA Astrophysics Data System (ADS)

    Robein, D.; Kazmierski, C.; Pougnet, A. M.; Rose, B.

    1991-02-01

    Iron incorporation into InP has been studied using an AP MOVPE method. A very good control of the iron doping has been obtained with a ferrocene diffusion cell source. Semi-insulating material with a resistivity as a high as 5 × 10 8 Ω cm has been measured on n-SI-n diodes with iron-doped 1 mum thick layers. A compensation activity of iron near 100% has been found. An iron incorporation activition energy of 2.5 eV has been determined below the solubility limit. The iron concentration was found to be proportional to the gas-phase ferrocene concentration and to follow an inverse square-root law under increasing phosphine flow. In order to explain the observed phenomena, an incorporation mechanism model is developed assuming a two-phosphorus vacancy— substitutional iron complex as the incorporated species.

  4. 3D active stabilization system with sub-micrometer resolution.

    PubMed

    Kursu, Olli; Tuukkanen, Tuomas; Rahkonen, Timo; Vähäsöyrinki, Mikko

    2012-01-01

    Stable positioning between a measurement probe and its target from sub- to few micrometer scales has become a prerequisite in precision metrology and in cellular level measurements from biological tissues. Here we present a 3D stabilization system based on an optoelectronic displacement sensor and custom piezo-actuators driven by a feedback control loop that constantly aims to zero the relative movement between the sensor and the target. We used simulations and prototyping to characterize the developed system. Our results show that 95% attenuation of movement artifacts is achieved at 1 Hz with stabilization performance declining to ca. 70% attenuation at 10 Hz. Stabilization bandwidth is limited by mechanical resonances within the displacement sensor that occur at relatively low frequencies, and are attributable to the sensor's high force sensitivity. We successfully used brain derived micromotion trajectories as a demonstration of complex movement stabilization. The micromotion was reduced to a level of ∼1 µm with nearly 100 fold attenuation at the lower frequencies that are typically associated with physiological processes. These results, and possible improvements of the system, are discussed with a focus on possible ways to increase the sensor's force sensitivity without compromising overall system bandwidth.

  5. 3D Active Stabilization System with Sub-Micrometer Resolution

    PubMed Central

    Rahkonen, Timo; Vähäsöyrinki, Mikko

    2012-01-01

    Stable positioning between a measurement probe and its target from sub- to few micrometer scales has become a prerequisite in precision metrology and in cellular level measurements from biological tissues. Here we present a 3D stabilization system based on an optoelectronic displacement sensor and custom piezo-actuators driven by a feedback control loop that constantly aims to zero the relative movement between the sensor and the target. We used simulations and prototyping to characterize the developed system. Our results show that 95 % attenuation of movement artifacts is achieved at 1 Hz with stabilization performance declining to ca. 70 % attenuation at 10 Hz. Stabilization bandwidth is limited by mechanical resonances within the displacement sensor that occur at relatively low frequencies, and are attributable to the sensor's high force sensitivity. We successfully used brain derived micromotion trajectories as a demonstration of complex movement stabilization. The micromotion was reduced to a level of ∼1 µm with nearly 100 fold attenuation at the lower frequencies that are typically associated with physiological processes. These results, and possible improvements of the system, are discussed with a focus on possible ways to increase the sensor's force sensitivity without compromising overall system bandwidth. PMID:22900045

  6. Beneficial effects of polyethylene packages containing micrometer-sized silver particles on the quality and shelf life of dried barberry (Berberis vulgaris).

    PubMed

    Motlagh, N Valipoor; Mosavian, M T Hamed; Mortazavi, S A; Tamizi, A

    2012-01-01

    In this research, the effects of low-density polyethylene (LDPE) packages containing micrometer-sized silver particles (LDPE-Ag) on microbial and sensory factors of dried barberry were investigated in comparison with the pure LDPE packages. LDPE-Ag packages with 1% and 2% concentrations of silver particles statistically caused a decrease in the microbial growth of barberry, especially in the case of mold and total bacteria count, compared with the pure LDPE packages. The taste, aroma, appearance, and total acceptance were evaluated by trained panelists using the 9-point hedonic scale. This test showed improvement of all these factors in the samples related to packages containing 1% and 2% concentrations of silver particles in comparison with other samples. Low-density polyethylene package containing micrometer-sized silver particles had beneficial effects on the sensory and microbial quality of barberry when compared with normal packing material. © 2011 Institute of Food Technologists®

  7. Study of dielectric relaxation and AC conductivity of InP:S single crystal

    NASA Astrophysics Data System (ADS)

    El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

    2012-07-01

    The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

  8. Morphological and chemical evolution on InP(1 0 0) surface irradiated with femtosecond laser

    NASA Astrophysics Data System (ADS)

    Qian, H. X.; Zhou, W.; Zheng, H. Y.; Lim, G. C.

    2005-12-01

    Single crystalline InP was ablated in air with p-polarized Ti:sapphire femtosecond laser at a fixed laser fluence of 82 mJ/cm 2. Ripples parallel to the laser polarization direction were found by scanning electron microscopy and atomic force microscopy to form for laser pulses ranging from 50 to 1000, whereas flower-like structures appeared for laser pulses of 10 4 and above. Analysis by X-ray photoelectron spectroscopy showed formation of indium and phosphorus oxides on the irradiated surface and the amounts of oxides increased with increasing number of laser pulses. The oxide formation is attributed to chemical reaction between the ultrafast laser ablation plume and oxygen in air, and formation of the flower-like structures is shown to be related to deposition of the oxides on the irradiated surface.

  9. Information technology as a tool for the Italian Institute of Social Security (INPS) in the management of social security and civil disability: Pro and cons.

    PubMed

    Sammicheli, Michele; Scaglione, Marcella

    2018-01-01

    We examine, from a medical-legal perspective, the pro and cons of the information technology procedures that the Italian Institute of Social Security (INPS) has implemented to manage the provision of social disability assistance, meaning that separate from the payment of pension contributions, being welfare, anchored to an administrative requirement by way of the compulsory payment of a minimum social security contribution.

  10. Integrated InP frequency discriminator for Phase-modulated microwave photonic links.

    PubMed

    Fandiño, J S; Doménech, J D; Muñoz, P; Capmany, J

    2013-02-11

    We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the first to include the optical detectors. The discriminator, designed as a linear filter in intensity, features preliminary SFDR values the range between 67 and 79 dB.Hz(2/3) for signal frequencies in the range of 5-9 GHz limited, in principle, by the high value of the optical losses arising from the use of several free space coupling devices in our experimental setup. As discussed, these losses can be readily reduced by the use of integrated spot-size converters improving the SFDR by 17.3 dB (84-96 dB.Hz(2/3)). Further increase up to a range of (104-116 dB.Hz(2/3)) is possible by reducing the system noise eliminating the EDFA employed in the setup and using a commercially available laser source providing higher output power and lower relative intensity noise. Other paths for improvement requiring a filter redesign to be linear in the optical field are also discussed.

  11. Morphological Control of In x Ga 1–x P Nanocrystals Synthesized in a Nonthermal Plasma

    DOE PAGES

    Bronstein, Noah D.; Wheeler, Lance M.; Anderson, Nicholas C.; ...

    2018-04-09

    We explore the growth of InxGa1-xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated by the presence ofmore » both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP1.5 and In0.5Ga0.5P1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.« less

  12. Morphological Control of In xGa 1–xP Nanocrystals Synthesized in a Nonthermal Plasma

    DOE PAGES

    Bronstein, Noah D.; Wheeler, Lance M.; Anderson, Nicholas C.; ...

    2018-04-09

    Here, we explore the growth of In xGa 1–xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated bymore » the presence of both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP 1.5 and In 0.5Ga 0.5P 1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.« less

  13. Morphological Control of In xGa 1–xP Nanocrystals Synthesized in a Nonthermal Plasma

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bronstein, Noah D.; Wheeler, Lance M.; Anderson, Nicholas C.

    Here, we explore the growth of In xGa 1–xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated bymore » the presence of both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP 1.5 and In 0.5Ga 0.5P 1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.« less

  14. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Barettin, Daniele, E-mail: Daniele.Barettin@uniroma2.it; Auf der Maur, Matthias; De Angelis, Roberta

    2015-03-07

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateralmore » quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.« less

  15. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    NASA Astrophysics Data System (ADS)

    Barettin, Daniele; Auf der Maur, Matthias; De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro; Pecchia, Alessandro

    2015-03-01

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In0.48Ga0.52P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k →.p → bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

  16. Flow and evaporation in single micrometer and nanometer scale pipes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Velasco, A. E.; Yang, C.; Siwy, Z. S.

    2014-07-21

    We report measurements of pressure driven flow of fluids entering vacuum through a single pipe of micrometer or nanometer scale diameter. Nanopores were fabricated by etching a single ion track in polymer or mica foils. A calibrated mass spectrometer was used to measure the flow rates of nitrogen and helium through pipes with diameter ranging from 10 μm to 31 nm. The flow of gaseous and liquid nitrogen was studied near 77 K, while the flow of helium was studied from the lambda point (2.18 K) to above the critical point (5.2 K). Flow rates were controlled by changing the pressure drop across the pipemore » in the range 0–31 atm. When the pressure in the pipe reached the saturated vapor pressure, an abrupt flow transition was observed. A simple viscous flow model is used to determine the position of the liquid/vapor interface in the pipe. The observed mass flow rates are consistent with no slip boundary conditions.« less

  17. Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

    PubMed

    Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

    2016-09-23

    InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

  18. Measurement of polarization dependence of two-photon absorption coefficient in InP using extended Z-scan technique for thick materials

    NASA Astrophysics Data System (ADS)

    Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

    2018-03-01

    The two-photon absorption coefficient β in InP has been measured in the wavelength range of 1640 to 1800 nm by the Z-scan technique in relatively thick materials. The values of β have been evaluated from the fit to the equation including the spatial and temporal profiles of the focused Gaussian beam. The polarization dependence of β has also been measured. The dependence has been expressed very well by the expression of β with the imaginary part of the third-order nonlinear susceptibility tensor χ(3).

  19. Micrometer sized immobilization of protein molecules onto quartz, silicium and gold.

    NASA Astrophysics Data System (ADS)

    Petersen, Steffen B.; Neves-Petersen, Maria Teresa; Klitgaard, Søren; Duroux, Meg Crookshanks

    2006-02-01

    We demonstrate that ultraviolet light can be used to make sterically oriented covalent immobilization of a large variety of protein molecules onto either gold or thiolated quartz or silicium. The reaction mechanism behind the reported new technology involves light induced breakage of disulphide bridges in proteins upon UV illumination of nearby aromatic amino acids, resulting in the formation of free, reactive thiol groups that will form covalent bonds with thiol reactive surfaces. The protein molecules in general retain their function. The size of the immobilization spot is determined by the dimension of the UV beam. In principle, the spot size may be as small as 1 micrometer or less. We have developed the necessary technology for preparing large protein arrays of enzymes and fragments of monoclonal antibodies. Dedicated Image Processing Software has been developed for making quality assessment of the protein arrays. A multitude of important application areas such as drug carriers and drug delivery, bioelectronics, carbon nanotubes, nanoparticles as well as protein glue are discussed.

  20. The 1.06 micrometer wideband laser modulator: Fabrication and life testing

    NASA Technical Reports Server (NTRS)

    Teague, J. R.

    1975-01-01

    The design, fabrication, testing and delivery of an optical modulator which will operate with a mode-locked Nd:YAG laser at 1.06 micrometers were performed. The system transfers data at a nominal rate of 400 Mbps. This wideband laser modulator can transmit either Pulse Gated Binary Modulation (PGBM) or Pulse Polarization Binary Modulation (PPBM) formats. The laser beam enters the modulator and passes through both crystals; approximately 1% of the transmitted beam is split from the main beam and analyzed for the AEC signal; the remaining part of the beam exits the modulator. The delivered modulator when initially aligned and integrated with laser and electronics performed very well. The optical transmission was 69.5%. The static extinction ratio was 69:1. A 1000 hour life test was conducted with the delivered modulator. A 63 bit pseudorandom code signal was used as a driver input. At the conclusion of the life test the modulator optical transmission was 71.5% and the static extinction ratio 65:1.

  1. Local-Scale Simulations of Nucleate Boiling on Micrometer Featured Surfaces: Preprint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sitaraman, Hariswaran; Moreno, Gilberto; Narumanchi, Sreekant V

    2017-08-03

    A high-fidelity computational fluid dynamics (CFD)-based model for bubble nucleation of the refrigerant HFE7100 on micrometer-featured surfaces is presented in this work. The single-fluid incompressible Navier-Stokes equations, along with energy transport and natural convection effects are solved on a featured surface resolved grid. An a priori cavity detection method is employed to convert raw profilometer data of a surface into well-defined cavities. The cavity information and surface morphology are represented in the CFD model by geometric mesh deformations. Surface morphology is observed to initiate buoyancy-driven convection in the liquid phase, which in turn results in faster nucleation of cavities. Simulationsmore » pertaining to a generic rough surface show a trend where smaller size cavities nucleate with higher wall superheat. This local-scale model will serve as a self-consistent connection to larger device scale continuum models where local feature representation is not possible.« less

  2. Manufacturing Methods and Technology (MM&T) program. 10.6 micrometer carbon dioxide TEA (Transverely Excited Atmospheric) lasers

    NASA Astrophysics Data System (ADS)

    Luck, C. F.

    1983-06-01

    This report documents the efforts of Raytheon Company to conduct a manufacturing methods and technology (MM&T) program for 10.6 micrometer carbon dioxide TEA lasers. A set of laser parameters is given and a conforming tube design is described. Results of thermal and mechanical stress analyses are detailed along with a procedure for assembling and testing the laser tube. Also provided are purchase specifications for optics and process specifications for some of the essential operations.

  3. Comparison of cloud boundaries measured with 8.6 mm radar and 10.6 micrometer lidar

    NASA Technical Reports Server (NTRS)

    Uttal, Taneil; Intrieri, Janet M.

    1993-01-01

    One of the most basic cloud properties is location; the height of cloud base and the height of cloud top. The glossary of meteorology defines cloud base (top) as follows: 'For a given cloud or cloud layer, that lowest (highest) level in the atmosphere at which the air contains a perceptible quantity of cloud particles.' Our studies show that for a 8.66 mm radar, and a 10.6 micrometer lidar, the level at which cloud hydrometers become 'perceptible' can vary significantly as a function of the different wavelengths, powers, beamwidths and sampling rates of the two remote sensors.

  4. Introduction of a new laser-scalpel for partial kidney resection based on 1.94 micrometer fiber laser system: initial in vivo-data

    NASA Astrophysics Data System (ADS)

    Tedsen, Sönke; Theisen-Kunde, Dirk; Doehn, Christian; Kausch, Ingo; Jocham, Dieter

    2009-02-01

    The technique of nephron sparing surgery has matured significantly over the past decade and is emerging as an oncologically sound procedure for the management of renal tumors. Methods of tumor excision as well as parenchymal reconstruction in a hemostaticallly controlled field have evolved to make this procedure safer. In an attempt to find an improoved hemostatic cutting instrument we developed a 1.94 micrometer Laser-Scalpel system in a porcine model. We evaluated data for partial porcine kidney resection performed by a 1.94 micrometer Laser-Scalpel and compared the data to those of a standard HF- (High- Frequency) dissection device. In 12 pigs general anesthesia and a median laparotomy was performed to expose both kidneys. In each pig one kidney was partially resected with the Laser-Scalpel and the other side with the HF-dissection device. The first 6 pigs were euthanized immediately after the procedure. The following 6 pigs were allowed to recover and underwent 2-3 weeks later euthanasia. The final evaluation data included total resection time, blood loss, mass of dissected tissue, total ischemic time and histological examination. Mean resected kidney tissue mass was 4.75 g with the laser system and 5.57 g for the HF-dissector, respectively. Mean estimated blood loss was 22 ml for the Laser- Scalpel and 78.2 ml for the HF-dissection device. Resection time was 9.45 min for the Laser-scalpel compared to 10.16 min. No complications, specifically no postoperative bleeding, occured in any of the animals. Histological evaluation with H&E staining showed a carbonized zone of about 0.57 mm directly at the dissected edge followed by a thermal damaged zone of about 1.25 mm in width. Thereafter healthy tissue was found in all histological samples. Partial kidney resection was easily and fast performed by the use of a 1.94 micrometer Laser-Scalpel system. Hemostasis was highly sufficient, so blood loss was minimal compared to conventional HF-dissection device. Therefore

  5. Facile Modulation of FLP Properties: A Phosphinylvinyl Grignard Reagent and Ga/P- and In/P2 -Based Frustrated Lewis Pairs.

    PubMed

    Backs, Jana; Lange, Merten; Possart, Josephine; Wollschläger, Agnes; Mück-Lichtenfeld, Christian; Uhl, Werner

    2017-03-06

    An Al/P-based frustrated Lewis pair (FLP) reacted with PhMgCl by an unexpected transmetalation and formation of a phosphinylvinyl Grignard reagent. This compound is well suited for the transfer of the basic FLP component to other Lewis acidic metal atoms and allowed the generation of a Ga/P and an In/P 2 FLP. The Ga FLP showed a behavior different to that of the corresponding Al FLP, the In FLP allowed the chelating coordination of an Au atom by Au-Cl bond activation. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

    NASA Astrophysics Data System (ADS)

    Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

    2012-01-01

    We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

  7. Passive and electro-optic polymer photonics and InP electronics integration

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Katopodis, V.; Groumas, P.; Konczykowska, A.; Dupuy, J.-.; Beretta, A.; Dede, A.; Miller, E.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Dinu, R.; Cangini, G.; Vannucci, A.; Felipe, D.; Maese-Novo, A.; Keil, N.; Bach, H.-.; Schell, Martin; Avramopoulos, H.; Kouloumentas, Ch.

    2015-05-01

    Hybrid photonic integration allows individual components to be developed at their best-suited material platforms without sacrificing the overall performance. In the past few years a polymer-enabled hybrid integration platform has been established, comprising 1) EO polymers for constructing low-complexity and low-cost Mach-Zehnder modulators (MZMs) with extremely high modulation bandwidth; 2) InP components for light sources, detectors, and high-speed electronics including MUX drivers and DEMUX circuits; 3) Ceramic (AIN) RF board that links the electronic signals within the package. On this platform, advanced optoelectronic modules have been demonstrated, including serial 100 Gb/s [1] and 2x100 Gb/s [2] optical transmitters, but also 400 Gb/s optoelectronic interfaces for intra-data center networks [3]. To expand the device functionalities to an unprecedented level and at the same time improve the integration compatibility with diversified active / passive photonic components, we have added a passive polymer-based photonic board (polyboard) as the 4th material system. This passive polyboard allows for low-cost fabrication of single-mode waveguide networks, enables fast and convenient integration of various thin-film elements (TFEs) to control the light polarization, and provides efficient thermo-optic elements (TOEs) for wavelength tuning, light amplitude regulation and light-path switching.

  8. A novel optical fibre doped with the nano-material as InP

    NASA Astrophysics Data System (ADS)

    Chen, Xi; Lee, Ly Guat; Zhang, Ru

    2007-11-01

    As the key of these optical devices which are widely used in the communication system, high nonlinear optical fibre will play an important role in the future optical fibre communication. With recent growth of nano-technology, researchers are hoping to obtain some kinds of optical fibre by combining the optical fibre with the nanotechnology. According to this current situation, the optical fibre doped with nano-material as InP (indium phosphide) is manufactured by using the MCVD (modified chemical vapor deposition) technology after our comprehensive consideration of many relative factors. Proved by experiments, this novel optical fibre has an excellent waveguide characteristic. After a consideration of the model of this novel optical fibre, its propagation constant β has been simulated by using the FEM (finite element method), and the graphs of presentation of magnetic field of the core are also obtained. In accordance with the results, the effective refractive index n eff = 1.401 has be calculated. Both the calculated result and the simulated graphs are matching well with the test, and this result is a step-stone bridge for future research of nonlinear parameter on this novel optical fiber.

  9. Radiation cooler for 10 micrometer wavelength engineering model receiver model no. 7172, serial no. 201

    NASA Technical Reports Server (NTRS)

    1975-01-01

    The design, fabrication, and testing of a radiative cooler are described. This cooler is an engineering model suitable for bench testing in the laboratory as a part of the 10-micrometer wavelength engineering model receiver, and conforms to the standard radiative cooler configuration, except that the inner stage and its support system were redesigned to accommodate the larger, heavier SAT detector. This radiative cooler will cool the detector to cryogenic temperature levels when the receiver is in a space environment or in a suitable thermal vacuum chamber. Equipment specifications are given along with the results of thermal tests, vibration tests, and electrical integrity tests.

  10. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si.

    PubMed

    Pantzas, K; Le Bourhis, E; Patriarche, G; Troadec, D; Beaudoin, G; Itawi, A; Sagnes, I; Talneau, A

    2016-03-18

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m(-2), respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  11. Vernier Caliper and Micrometer Computer Models Using Easy Java Simulation and Its Pedagogical Design Features--Ideas for Augmenting Learning with Real Instruments

    ERIC Educational Resources Information Center

    Wee, Loo Kang; Ning, Hwee Tiang

    2014-01-01

    This paper presents the customization of Easy Java Simulation models, used with actual laboratory instruments, to create active experiential learning for measurements. The laboratory instruments are the vernier caliper and the micrometer. Three computer model design ideas that complement real equipment are discussed. These ideas involve (1) a…

  12. C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate

    NASA Astrophysics Data System (ADS)

    Limeng, Zhang; Dan, Lu; Zhaosong, Li; Biwei, Pan; Lingjuan, Zhao

    2016-12-01

    The design, fabrication and characterization of a fundamental/first-order mode converter based on multimode interference coupler on InP substrate were reported. Detailed optimization of the device parameters were investigated using 3D beam propagation method. In the experiments, the fabricated mode converter realized mode conversion from the fundamental mode to the first-order mode in the wavelength range of 1530-1565 nm with excess loss less than 3 dB. Moreover, LP01 and LP11 fiber modes were successfully excited from a few-mode fiber by using the device. This InP-based mode converter can be a possible candidate for integrated transceivers for future mode-division multiplexing system. Project supported by the National Basic Research Program of China (No. 2014CB340102) and in part by the National Natural Science Foundation of China (Nos. 61274045, 61335009).

  13. Room-Temperature Single-Photon Emission from Micrometer-Long Air-Suspended Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Ishii, A.; Uda, T.; Kato, Y. K.

    2017-11-01

    Statistics of photons emitted by mobile excitons in individual carbon nanotubes are investigated. Photoluminescence spectroscopy is used to identify the chiralities and suspended lengths of air-suspended nanotubes, and photon-correlation measurements are performed at room temperature on telecommunication-wavelength nanotube emission with a Hanbury-Brown-Twiss setup. We obtain zero-delay second-order correlation g(2 )(0 ) less than 0.5, indicating single-photon generation. Excitation power dependence of the photon antibunching characteristics is examined for nanotubes with various chiralities and suspended lengths, where we find that the minimum value of g(2 )(0 ) is obtained at the lowest power. The influence of exciton diffusion and end quenching is studied by Monte Carlo simulations, and we derive an analytical expression for the minimum value of g(2 )(0 ). Our results indicate that mobile excitons in micrometer-long nanotubes can in principle produce high-purity single photons, leading to new design strategies for quantum photon sources.

  14. Constraints on Exotic Dipole-Dipole Couplings between Electrons at the Micrometer Scale

    NASA Astrophysics Data System (ADS)

    Kotler, Shlomi; Ozeri, Roee; Kimball, Derek F. Jackson

    2015-08-01

    New constraints on exotic dipole-dipole interactions between electrons at the micrometer scale are established, based on a recent measurement of the magnetic interaction between two trapped 88Sr+ ions. For light bosons (mass≤0.1 eV ) we obtain a 90% confidence interval for an axial-vector-mediated interaction strength of |gAegAe/4 π ℏc | ≤1.2 ×10-17 . Assuming C P T invariance, this constraint is compared to that on anomalous electron-positron interactions, derived from positronium hyperfine spectroscopy. We find that the electron-electron constraint is 6 orders of magnitude more stringent than the electron-positron counterpart. Bounds on pseudoscalar-mediated interaction as well as on torsion gravity are also derived and compared with previous work performed at different length scales. Our constraints benefit from the high controllability of the experimental system which contained only two trapped particles. It therefore suggests a useful new platform for exotic particle searches, complementing other experimental efforts.

  15. Micrometer-scale fabrication of complex three dimensional lattice + basis structures in silicon

    DOE PAGES

    Burckel, D. Bruce; Resnick, Paul J.; Finnegan, Patrick S.; ...

    2015-01-01

    A complementary metal oxide semiconductor (CMOS) compatible version of membrane projection lithography (MPL) for fabrication of micrometer-scale three-dimensional structures is presented. The approach uses all inorganic materials and standard CMOS processing equipment. In a single layer, MPL is capable of creating all 5 2D-Bravais lattices. Furthermore, standard semiconductor processing steps can be used in a layer-by-layer approach to create fully three dimensional structures with any of the 14 3D-Bravais lattices. The unit cell basis is determined by the projection of the membrane pattern, with many degrees of freedom for defining functional inclusions. Here we demonstrate several unique structural motifs, andmore » characterize 2D arrays of unit cells with split ring resonators in a silicon matrix. The structures exhibit strong polarization dependent resonances and, for properly oriented split ring resonators (SRRs), coupling to the magnetic field of a normally incident transverse electromagnetic wave, a response unique to 3D inclusions.« less

  16. Molecular Precision at Micrometer Length Scales: Hierarchical Assembly of DNA-Protein Nanostructures.

    PubMed

    Schiffels, Daniel; Szalai, Veronika A; Liddle, J Alexander

    2017-07-25

    Robust self-assembly across length scales is a ubiquitous feature of biological systems but remains challenging for synthetic structures. Taking a cue from biology-where disparate molecules work together to produce large, functional assemblies-we demonstrate how to engineer microscale structures with nanoscale features: Our self-assembly approach begins by using DNA polymerase to controllably create double-stranded DNA (dsDNA) sections on a single-stranded template. The single-stranded DNA (ssDNA) sections are then folded into a mechanically flexible skeleton by the origami method. This process simultaneously shapes the structure at the nanoscale and directs the large-scale geometry. The DNA skeleton guides the assembly of RecA protein filaments, which provides rigidity at the micrometer scale. We use our modular design strategy to assemble tetrahedral, rectangular, and linear shapes of defined dimensions. This method enables the robust construction of complex assemblies, greatly extending the range of DNA-based self-assembly methods.

  17. Constraints on Exotic Dipole-Dipole Couplings between Electrons at the Micrometer Scale.

    PubMed

    Kotler, Shlomi; Ozeri, Roee; Kimball, Derek F Jackson

    2015-08-21

    New constraints on exotic dipole-dipole interactions between electrons at the micrometer scale are established, based on a recent measurement of the magnetic interaction between two trapped 88Sr(+) ions. For light bosons (mass≤0.1  eV) we obtain a 90% confidence interval for an axial-vector-mediated interaction strength of |g(A)(e)g(A)(e)/4πℏc|≤1.2×10(-17). Assuming CPT invariance, this constraint is compared to that on anomalous electron-positron interactions, derived from positronium hyperfine spectroscopy. We find that the electron-electron constraint is 6 orders of magnitude more stringent than the electron-positron counterpart. Bounds on pseudoscalar-mediated interaction as well as on torsion gravity are also derived and compared with previous work performed at different length scales. Our constraints benefit from the high controllability of the experimental system which contained only two trapped particles. It therefore suggests a useful new platform for exotic particle searches, complementing other experimental efforts.

  18. InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stern, M.B.; Brody, E.; Sowell, B.

    1987-12-15

    Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 ..mu..m in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-..mu..m light output-current characteristic. The observed decrease in the 0.96-..mu..m intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.

  19. Preparation and Characterization of InP/Poly(methyl methacrylate) Nanocomposite Films.

    PubMed

    Kwon, Younghoon; Kim, Jongsung

    2017-04-01

    Quantum dots (QDs) are nanocrystalline semiconductors with many unusual optical properties. They exhibit very high fluorescence intensities and possess exceptional stability against photo-bleaching. In this study, we report the preparation of InP QDs-poly(methyl methacrylate) (PMMA) hybrids by fabricating QDs via a thermal decomposition reaction, followed by radical polymerization. The InP QDs were synthesized using indium(III) chloride and tris(dimethylamino)phosphine. Flexible composite films were obtained by radical polymerization using methyl methacrylate (MMA) as the monomer and 2,2′-azobis(2-methylpropionitrile) (AIBN) as a radical initiator. The PL intensity of the QDs was lowered upon composite formation with PMMA. However, the composites exhibited higher thermal stability than pure PMMA.

  20. Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

    NASA Technical Reports Server (NTRS)

    Slifer, Luther W., Jr.

    1991-01-01

    One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

  1. Mineralogy and Thermal Properties of V-Type Asteroid 956 Elisa: Evidence for Diogenitic Material from the Spitzer IRS (5-35 Micrometers) Spectrum

    NASA Technical Reports Server (NTRS)

    Lim, Lucy F.; Emery, Joshua P.; Moskovitz, Nicholas A.

    2010-01-01

    We present the thermal infrared (5-35 micrometer) spectrum of 956 Elisa as measured by the Spitzer Infrared Spectrograph ("IRS"; Houck,1.R. et .11. [20041. Astrophys, 1. SuppL 154, 18-24) together with new ground-based lightcurve data and near-IR spectra. From the visible lightcurve photometry, we determine a rotation period of 16.494 +/- 0.001 h, identify the rotational phase of the Spitzer observations, and estimate the visible absolute magnitude (Hv) at that rotational phase to be 12.58 +/- 0.04. From radiometric analysis of the thermal flux spectrum, we find that at the time of observation 956 Elisa had a projected radius of 5.3 +/- 0.4 km with a visible albedo pv = 0.142+/- 0.022, significantly lower than that of the prototype V-type asteroid, 4 Vesta. (This corresponds to a radius of 5.2 +/- 0.4 km at lightcurve mean.) Analysis with the standard thermal model (STM) results in a sub-solar temperature of 292.3 +/- 2.8 K and beaming parameter eta = 1.16 +/- 0.05. Thermophysical modeling places a lower limit of 20 J m(exp -2)K(exp -1)s(exp -1/2) on the thermal inertia of the asteroid's surface layer (if the surface is very smooth) but more likely values fall between 30 and 150 J m(exp -2)K(exp -1)s(exp -1/2) depending on the sense of rotation. The emissivity spectrum, calculated by dividing the measured thermal flux spectrum by the modeled thermal continuum, exhibits mineralogically interpretable spectral features within the 9-12 micrometer reststrahlen band, the 15-16.5 micrometer Si-O-Si stretching region, and the 16-25 micrometer reststrahlen region that are consistent with pyroxene of diogenitic composition: extant diogenitic pyroxenes fall within the narrow compositional range W0(sub 2+/-1)En(sub 74+/-2)Fs(sub 24+/-1). Spectral deconvolution of the 9-12 micrometer reststrahlen features indicates that up to approximately 20% olivine may also be present, suggesting an olivine-diogenite-like mineralogy. The mid-IR spectrum is inconsistent with non

  2. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate.

    PubMed

    Zhang, Min; Guo, Zuoxing; Zhao, Liang; Yang, Shen; Zhao, Lei

    2018-06-08

    In 0.82 Ga 0.18 As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In 0.82 Ga 0.18 As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In 0.82 Ga 0.18 As buffer layer. By introducing the graded In x Ga 1−x As buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In 0.82 Ga 0.18 As/In 0.82 Al 0.18 As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

  3. PULSE SYNTHESIZING GENERATOR

    DOEpatents

    Kerns, Q.A.

    1963-08-01

    >An electronlc circuit for synthesizing electrical current pulses having very fast rise times includes several sinewave generators tuned to progressively higher harmonic frequencies with signal amplitudes and phases selectable according to the Fourier series of the waveform that is to be synthesized. Phase control is provided by periodically triggering the generators at precisely controlled times. The outputs of the generators are combined in a coaxial transmission line. Any frequency-dependent delays that occur in the transmission line can be readily compensated for so that the desired signal wave shape is obtained at the output of the line. (AEC)

  4. Sub-micrometer 20MeV protons or 45MeV lithium spot irradiation enhances yields of dicentric chromosomes due to clustering of DNA double-strand breaks.

    PubMed

    Schmid, T E; Friedland, W; Greubel, C; Girst, S; Reindl, J; Siebenwirth, C; Ilicic, K; Schmid, E; Multhoff, G; Schmitt, E; Kundrát, P; Dollinger, G

    2015-11-01

    In conventional experiments on biological effects of radiation types of diverse quality, micrometer-scale double-strand break (DSB) clustering is inherently interlinked with clustering of energy deposition events on nanometer scale relevant for DSB induction. Due to this limitation, the role of the micrometer and nanometer scales in diverse biological endpoints cannot be fully separated. To address this issue, hybrid human-hamster AL cells have been irradiated with 45MeV (60keV/μm) lithium ions or 20MeV (2.6keV/μm) protons quasi-homogeneously distributed or focused to 0.5×1μm(2) spots on regular matrix patterns (point distances up to 10.6×10.6μm), with pre-defined particle numbers per spot to provide the same mean dose of 1.7Gy. The yields of dicentrics and their distribution among cells have been scored. In parallel, track-structure based simulations of DSB induction and chromosome aberration formation with PARTRAC have been performed. The results show that the sub-micrometer beam focusing does not enhance DSB yields, but significantly affects the DSB distribution within the nucleus and increases the chance to form DSB pairs in close proximity, which may lead to increased yields of chromosome aberrations. Indeed, the experiments show that focusing 20 lithium ions or 451 protons per spot on a 10.6μm grid induces two or three times more dicentrics, respectively, than a quasi-homogenous irradiation. The simulations reproduce the data in part, but in part suggest more complex behavior such as saturation or overkill not seen in the experiments. The direct experimental demonstration that sub-micrometer clustering of DSB plays a critical role in the induction of dicentrics improves the knowledge on the mechanisms by which these lethal lesions arise, and indicates how the assumptions of the biophysical model could be improved. It also provides a better understanding of the increased biological effectiveness of high-LET radiation. Copyright © 2015 Elsevier B.V. All

  5. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jandl, Adam, E-mail: jandl@mit.edu; Bulsara, Mayank T.; Fitzgerald, Eugene A.

    The properties of InAs{sub x}P{sub 1−x} compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10{sup 6}/cm{sup 2}) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 10{sup 5} cm{sup −2} for films graded from the InP lattice constant to InAs{sub 0.15}P{sub 0.85}.more » A model for a two-energy level dislocation nucleation system is proposed based on our results.« less

  6. InP Nanoflag Growth from a Nanowire Template by in Situ Catalyst Manipulation.

    PubMed

    Kelrich, Alexander; Sorias, Ofir; Calahorra, Yonatan; Kauffmann, Yaron; Gladstone, Ran; Cohen, Shimon; Orenstein, Meir; Ritter, Dan

    2016-04-13

    Quasi-two-dimensional semiconductor materials are desirable for electronic, photonic, and energy conversion applications as well as fundamental science. We report on the synthesis of indium phosphide flag-like nanostructures by epitaxial growth on a nanowire template at 95% yield. The technique is based on in situ catalyst unpinning from the top of the nanowire and its induced migration along the nanowire sidewall. Investigation of the mechanism responsible for catalyst movement shows that its final position is determined by the structural defect density along the nanowire. The crystal structure of the "flagpole" nanowire is epitaxially transferred to the nanoflag. Pure wurtzite InP nanomembranes with just a single stacking fault originating from the defect in the flagpole that pinned the catalyst were obtained. Optical characterization shows efficient highly polarized photoluminescence at room temperature from a single nanoflag with up to 90% degree of linear polarization. Electric field intensity enhancement of the incident light was calculated to be 57, concentrated at the nanoflag tip. The presented growth method is general and thus can be employed for achieving similar nanostructures in other III-V semiconductor material systems with potential applications in active nanophotonics.

  7. X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

    NASA Astrophysics Data System (ADS)

    Takahashi, Hiroshi; Hashizume, Tamotsu; Hasegawa, Hideki

    1999-02-01

    In order to understand and optimize a novel oxide-free InP passivation process using a silicon surface quantum well, a detailed in situ X-ray photoelectron spectroscopy (XPS) and ultrahigh vacuum (UHV) contactless capacitance-voltage (C-V) study of the interface was carried out. Calculation of quantum levels in the silicon quantum well was performed on the basis of the band lineup of the strained Si3N4/Si/InP interface and the result indicated that the interface should become free of gap states when the silicon layer thickness is below 5 Å. Experimentally, such a delicate Si3N4/Si/InP structure was realized by partial nitridation of a molecular beam epitaxially (MBE) grown pseudomorphic silicon layer using an electron cyclotron resonance (ECR) N2 plasma. The progress of nitridation was investigated in detail by angle-resolved XPS. A newly developed UHV contactless C-V method realized in situ characterization of surface electronic properties of InP at each processing step for passivation. It was found that the interface state density decreased substantially into the 1010 cm-2 eV-1 range by optimizing the nitridation process of the silicon layer. It was concluded that both the surface bond termination and state removal by quantum confinement are responsible for the NSS reduction.

  8. Multiplexed chirp waveform synthesizer

    DOEpatents

    Dudley, Peter A.; Tise, Bert L.

    2003-09-02

    A synthesizer for generating a desired chirp signal has M parallel channels, where M is an integer greater than 1, each channel including a chirp waveform synthesizer generating at an output a portion of a digital representation of the desired chirp signal; and a multiplexer for multiplexing the M outputs to create a digital representation of the desired chirp signal. Preferably, each channel receives input information that is a function of information representing the desired chirp signal.

  9. Joint NOSC/NRL (Naval Ocean Systems Center/Naval Research Laboratory) InP Microwave/Millimeter Wave Technology Workshop Held in San Diego, California on 25-26 January 1989

    DTIC Science & Technology

    1989-12-01

    A 11A Novel Applications of InP Based Technology: Neurocomputing ........... Aw ru Millimeter-Wave InAlAs/InGaAs/InP Lattice -Matched...Dielectrics) * II-A FLUORIDES (CaF2, BaF2 , SrF2 and their mixtures) e LATTICE MATCH TO MOST IMPORTANT SEMICON- DUCTORS (Slight mismatch can be used for...strained super lattice approach) e COMPARED TO AMORPHOUS DIELECTRICS ORDERED SEMICONDUCTOR-DIELECTRIC INTERFACE (I) Improved carrier transport (high

  10. A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

    NASA Technical Reports Server (NTRS)

    Faur, M.; Faur, M.; Flood, D. J.; Weinberg, I.; Brinker, D. J.; Goradia, C.; Fatemi, N.; Goradia, M.; Thesling, W.

    1991-01-01

    The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.

  11. Horizon sensors attitude errors simulation for the Brazilian Remote Sensing Satellite

    NASA Astrophysics Data System (ADS)

    Vicente de Brum, Antonio Gil; Ricci, Mario Cesar

    Remote sensing, meteorological and other types of satellites require an increasingly better Earth related positioning. From the past experience it is well known that the thermal horizon in the 15 micrometer band provides conditions of determining the local vertical at any time. This detection is done by horizon sensors which are accurate instruments for Earth referred attitude sensing and control whose performance is limited by systematic and random errors amounting about 0.5 deg. Using the computer programs OBLATE, SEASON, ELECTRO and MISALIGN, developed at INPE to simulate four distinct facets of conical scanning horizon sensors, attitude errors are obtained for the Brazilian Remote Sensing Satellite (the first one, SSR-1, is scheduled to fly in 1996). These errors are due to the oblate shape of the Earth, seasonal and latitudinal variations of the 15 micrometer infrared radiation, electronic processing time delay and misalignment of sensor axis. The sensor related attitude errors are thus properly quantified in this work and will, together with other systematic errors (for instance, ambient temperature variation) take part in the pre-launch analysis of the Brazilian Remote Sensing Satellite, with respect to the horizon sensor performance.

  12. Crystallization of micrometer-sized particles with molecular contours.

    PubMed

    Song, Pengcheng; Olmsted, Brian K; Chaikin, Paul; Ward, Michael D

    2013-11-12

    The crystallization of micrometer-sized particles with shapes mimicking those of tetrabenzoheptacene (TBH) and 1,2:5,6-dibenzanthracene (DBT), both flat polyacenes, in an electric field results in the formation of ordered 2D packings that mimic the plane group symmetries in their respective molecular crystal equivalents. Whereas the particles packed in low-density disordered arrangements under a gravitational gradient, dielectrophoresis (under an ac electric field) produced ordered high-density packings with readily identifiable plane group symmetry. The ordered colloidal assemblies were stable for hours, with the packing density decreasing slowly but with recognizable symmetry for up to 12 h for the TBH-shaped particles and up to 4 h for the DBT-shaped particles. This unexpected stability is attributed to jamming behavior associated with interlocking of the dogbone-shaped (TBH) and Z-block (DBT) particles, contrasting with the more rapid reduction of packing density and loss of hexagonal symmetry for disk-shaped particles upon removal of the electric field. The TBH-shaped and DBT-shaped particles assemble into the p2 plane group, which corresponds to the densest particle packing among the possible close-packed plane groups for these particle symmetries. The p2 symmetry observed for the TBH-shaped and DBT-shaped colloid crystal emulates the p2 symmetry of the (010) layers in their respective molecular crystals, which crystallize in monoclinic lattices. Notably, DBT-shaped particles also form ordered domains with pgg symmetry, replicating the plane group symmetry of the (100) layer in the orthorhombic polymorph of DBT. These observations illustrate that the 2D ordering of colloid particles can mimic the packing of molecules with similar shapes, demonstrating that packing can transcend length scales from the molecular to the colloidal.

  13. Micrometer-sized TPM emulsion droplets with surface-mobile binding groups

    NASA Astrophysics Data System (ADS)

    van der Wel, Casper; van de Stolpe, Guido L.; Verweij, Ruben W.; Kraft, Daniela J.

    2018-03-01

    Colloids coated with lipid membranes have been widely employed for fundamental studies of lipid membrane processes, biotechnological applications such as drug delivery and biosensing, and more recently, for self-assembly. The latter has been made possible by inserting DNA oligomers with covalently linked hydrophobic anchors into the membrane. The lateral mobility of the DNA linkers on micrometer-sized droplets and solid particles has opened the door to creating structures with unprecedented structural flexibility. Here, we investigate micro-emulsions of TPM (3-(trimethoxysilyl)propyl methacrylate) as a platform for lipid monolayers and further functionalization with proteins and DNA oligonucleotides. TPM droplets can be produced with a narrow size distribution and are polymerizable, thus providing supports for model lipid membranes with controlled size and curvature. With fluorescence recovery after photobleaching, we observed that droplet-attached lipids, NeutrAvidin proteins, as well as DNA oligonucleotides all show mobility on the surface. We explored the assembly of micron-sized particles on TPM-droplets by exploiting either avidin-biotin interactions or double-stranded DNA with complementary single-stranded end groups. While the single molecules are mobile, the particles that are attached to them are not. We propose that this is caused by the heterogeneous nature of emulsified TPM, which forms an oligomer network that limits the collective motion of linkers, but allows the surface mobility of individual molecules.

  14. Composites comprising biologically-synthesized nanomaterials

    DOEpatents

    Curran, Seamus; Dias, Sampath; Blau, Werner; Wang, Jun; Oremland, Ronald S; Baesman, Shaun

    2013-04-30

    The present disclosure describes composite materials containing a polymer material and a nanoscale material dispersed in the polymer material. The nanoscale materials may be biologically synthesized, such as tellurium nanorods synthesized by Bacillus selenitireducens. Composite materials of the present disclosure may have optical limiting properties and find use in optical limiting devices.

  15. A scanning tunneling microscope with a scanning range from hundreds of micrometers down to nanometer resolution.

    PubMed

    Kalkan, Fatih; Zaum, Christopher; Morgenstern, Karina

    2012-10-01

    A beetle type stage and a flexure scanning stage are combined to form a two stages scanning tunneling microscope (STM). It operates at room temperature in ultrahigh vacuum and is capable of scanning areas up to 300 μm × 450 μm down to resolution on the nanometer scale. This multi-scale STM has been designed and constructed in order to investigate prestructured metallic or semiconducting micro- and nano-structures in real space from atomic-sized structures up to the large-scale environment. The principle of the instrument is demonstrated on two different systems. Gallium nitride based micropillars demonstrate scan areas up to hundreds of micrometers; a Au(111) surface demonstrates nanometer resolution.

  16. Studies on interface curvature during vertical Bridgman growth of InP in a flat-bottom container

    NASA Astrophysics Data System (ADS)

    Rudolph, P.; Matsumoto, F.; Fukuda, T.

    1996-01-01

    A simplified numerical simulation of the dynamic behaviour of the solid-liquid interface curvature during modified vertical Bridgman growth of 2 inch InP single crystals, in a flat-bottom container, with a seed of the same diameter is presented. The results agree with striation patterns observed by transmission X-ray topography. A nearly flat interface with slightly constant concavity has been ascertained in the front half of the grown ingots. It can be assumed that such a steady interface morphology is one of the basic requirements for the observed twin-free and reduced dislocation growth in this region. In an attempt to optimize the shape of the melting point isotherm in the last-to-freeze part of the crystals, the axial temperature gradient, the seed length, the growth velocity, the melt temperature and the conditions of heat transfer (different ambient atmospheres and plugs) as well as the temperature profile in the top region above the encapsulant have been varied in the model.

  17. InP Based Ternary And Quaternary Thin Film Structures On Large Areas Grown By LP-MOVPE

    NASA Astrophysics Data System (ADS)

    Schmitz, D.; Strauch, , G.; Jurgensen, H.; Heyen, M.; Harde, P.

    1989-11-01

    Using low pressure MOVPE and higher linear flow velocities high purity GalnAs/lnP and GalnAsP heterostructures can be prepared. Excellent homogeneity in thickness, composition, and doping on a 2" InP substrate can be realized by this approach for optimized conditions. The low growth rates required for the deposition of very narrow well structures are achieved by selecting reduced pressures of the group III and group V compounds used for deposition. The method yields structures with high electron mobilities of the two dimensional electron gas in the well and narrow PL (i.e. 2.2 meV for 20 nm wells) line widths, which is indicative of low impurity incorporation and abrupt heterojunctions. The observed energy shifts (up to 528 meV) demonstrate the large range of bandgap variation attainable by this method. A study of dopant incorporation shows, that Zn yields steep transitions in InGaAs.

  18. Bio-sensing based on plasmon-coupling caused by rotated sub-micrometer gratings in metal-dielectric interfacial layers

    NASA Astrophysics Data System (ADS)

    Csete, M.; Sipos, Á.; Szalai, A.; Mathesz, A.; Deli, M. A.; Veszelka, Sz.; Schmatulla, A.; Kőházi-Kis, A.; Osvay, K.; Marti, O.; Bor, Zs.

    2007-09-01

    Novel plasmonic sensor chips are prepared by generating sub-micrometer periodic patterns in the interfacial layers of bimetal-polymer films via master-grating based interference method. Poly-carbonate films spin-coated onto vacuum evaporated silver-gold bimetallic layers are irradiated by the two interfering UV beams of a Nd:YAG laser. It is proven by pulsed force mode AFM that periodic adhesion pattern corresponds to the surface relief gratings, consisting of sub-micrometer droplet arrays and continuous polymer stripes, induced by p- and s-polarized beams, respectively. The characteristic periods are the same, but more complex and larger amplitude adhesion modulation is detectable on the droplet arrays. The polar and azimuthal angle dependence of the resonance characteristic of plasmons is studied by combining the prism- and grating-coupling methods in a modified Kretschmann arrangement, illuminating the structured metal-polymer interface by a frequency doubled Nd:YAG laser through a semi-cylinder. It is proven that the grating-coupling results in double-peaked plasmon resonance curves on both of the droplet arrays and line gratings, when the grooves are rotated to an appropriate azimuthal angle, and the modulation amplitude of the structure is sufficiently large. Streptavidin seeding is performed to demonstrate that small amount of protein can be detected monitoring the shift of the secondary resonance minima. The available high concentration sensitivity is explained by the promotion of protein adherence in the structure's valleys due to the enhanced adhesion. The line-shaped polymer gratings resulting in narrow resonance peaks are utilized to demonstrate the effect of therapeutic molecules on Amyloid-Β peptide, a pathogenic factor in Alzheimer disease.

  19. Aluminum Foils of the Stardust Interstellar Collector: The Challenge of Recognizing Micrometer-sized Impact Craters made by Interstellar Grains

    NASA Technical Reports Server (NTRS)

    Kearsley, A. T.; Westphal, A. J.; Burchell, M. J.; Zolensky, Michael E.

    2008-01-01

    Preliminary Examination (PE) of the Stardust cometary collector revealed material embedded in aerogel and on aluminium (Al) foil. Large numbers of sub-micrometer impact craters gave size, structural and compositional information. With experience of finding and analyzing the picogram to nanogram mass remains of cometary particles, are we now ready for PE of the Interstellar (IS) collector? Possible interstellar particle (ISP) tracks in the aerogel are being identified by the stardust@home team. We are now assessing challenges facing PE of Al foils from the interstellar collector.

  20. Psychoacoustic Analysis of Synthesized Jet Noise

    NASA Technical Reports Server (NTRS)

    Okcu, Selen; Rathsam, Jonathan; Rizzi, Stephen A.

    2013-01-01

    An aircraft noise synthesis capability is being developed so the annoyance caused by proposed aircraft can be assessed during the design stage. To make synthesized signals as realistic as possible, high fidelity simulation is required for source (e.g., engine noise, airframe noise), propagation and receiver effects. This psychoacoustic study tests whether the jet noise component of synthesized aircraft engine noise can be made more realistic using a low frequency oscillator (LFO) technique to simulate fluctuations in level observed in recordings. Jet noise predictions are commonly made in the frequency domain based on models of time-averaged empirical data. The synthesis process involves conversion of the frequency domain prediction into an audible pressure time history. However, because the predictions are time-invariant, the synthesized sound lacks fluctuations observed in recordings. Such fluctuations are hypothesized to be perceptually important. To introduce time-varying characteristics into jet noise synthesis, a method has been developed that modulates measured or predicted 1/3-octave band levels with a (<20Hz) LFO. The LFO characteristics are determined through analysis of laboratory jet noise recordings. For the aft emission angle, results indicate that signals synthesized using a generic LFO are perceived as more similar to recordings than those using no LFO, and signals synthesized with an angle-specific LFO are more similar to recordings than those synthesized with a generic LFO.

  1. Parasitic Parameters Extraction for InP DHBT Based on EM Method and Validation up to H-Band

    NASA Astrophysics Data System (ADS)

    Li, Oupeng; Zhang, Yong; Wang, Lei; Xu, Ruimin; Cheng, Wei; Wang, Yuan; Lu, Haiyan

    2017-05-01

    This paper presents a small-signal model for InGaAs/InP double heterojunction bipolar transistor (DHBT). Parasitic parameters of access via and electrode finger are extracted by 3-D electromagnetic (EM) simulation. By analyzing the equivalent circuit of seven special structures and using the EM simulation results, the parasitic parameters are extracted systematically. Compared with multi-port s-parameter EM model, the equivalent circuit model has clear physical intension and avoids the complex internal ports setting. The model is validated on a 0.5 × 7 μm2 InP DHBT up to 325 GHz. The model provides a good fitting result between measured and simulated multi-bias s-parameters in full band. At last, an H-band amplifier is designed and fabricated for further verification. The measured amplifier performance is highly agreed with the model prediction, which indicates the model has good accuracy in submillimeterwave band.

  2. The Trajectory Synthesizer Generalized Profile Interface

    NASA Technical Reports Server (NTRS)

    Lee, Alan G.; Bouyssounouse, Xavier; Murphy, James R.

    2010-01-01

    The Trajectory Synthesizer is a software program that generates aircraft predictions for Air Traffic Management decision support tools. The Trajectory Synthesizer being used by researchers at NASA Ames Research Center was restricted in the number of trajectory types that could be generated. This limitation was not sufficient to support the rapidly changing Air Traffic Management research requirements. The Generalized Profile Interface was developed to address this issue. It provides a flexible approach to describe the constraints applied to trajectory generation and may provide a method for interoperability between trajectory generators. It also supports the request and generation of new types of trajectory profiles not possible with the previous interface to the Trajectory Synthesizer. Other enhancements allow the Trajectory Synthesizer to meet the current and future needs of Air Traffic Management research.

  3. In vivo and ex vivo measurement of polyethylene wear in total hip arthroplasty: comparison of measurements using a CT algorithm, a coordinate-measuring machine, and a micrometer.

    PubMed

    Goldvasser, Dov; Hansen, Viktor J; Noz, Marilyn E; Maguire, Gerald Q; Zeleznik, Michael P; Olivecrona, Henrik; Bragdon, Charles R; Weidenhielm, Lars; Malchau, Henrik

    2014-06-01

    Determination of the amount of wear in a polyethylene liner following total hip arthroplasty (THA) is important for both the clinical care of individual patients and the development of new types of liners. We measured in vivo wear of the polyethylene liner using computed tomography (CT) (obtained in the course of regular clinical care) and compared it to coordinate-measuring machine (CMM) readings. Also, changes in liner thickness of the same retrieved polyethylene liner were measured using a micrometer, and were compared to CT and CMM measurements. The distance between the centers of the acetabular cup and femoral head component was measured in 3D CT, using a semi-automatic analysis method. CMM readings were performed on each acetabular liner and data were analyzed using 3D computer-aided design software. Micrometer readings compared the thickest and thinnest regions of the liner. We analyzed 10 THA CTs and retrievals that met minimal requirements for CT slice thickness and explanted cup condition. RESULTS - For the 10 cups, the mean difference between the CT readings and the CMM readings was -0.09 (-0.38 to 0.20) mm. This difference was not statistically significant (p = 0.6). Between CT and micrometer, the mean difference was 0.11 (-0.33 to 0.55) mm. This difference was not statistically significant (p = 0.6). INTERPRETATION - Our results show that CT imaging is ready to be used as a tool in clinical wear measurement of polyethylene liners used in THA.

  4. Choroidal imaging by one-micrometer dual-beam Doppler optical coherence angiography with adjustable velocity range

    NASA Astrophysics Data System (ADS)

    Jaillon, Franck; Makita, Shuichi; Yasuno, Yoshiaki

    2012-03-01

    Ability of a new version of one-micrometer dual-beam optical coherence angiography (OCA) based on Doppler optical coherence tomography (OCT), is demonstrated for choroidal vasculature imaging. A particular feature of this system is the adjustable time delay between two probe beams. This allows changing the measurable velocity range of moving constituents such as blood without alteration of the scanning protocol. Since choroidal vasculature is made of vessels having blood flows with different velocities, this technique provides a way of discriminating vessels according to the velocity range of their inner flow. An example of choroid imaging of a normal emmetropic eye is here given. It is shown that combining images acquired with different velocity ranges provides an enhanced vasculature representation. This method may be then useful for pathological choroid characterization.

  5. 93-133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

    NASA Astrophysics Data System (ADS)

    Sato, Masaru; Shiba, Shoichi; Matsumura, Hiroshi; Takahashi, Tsuyoshi; Nakasha, Yasuhiro; Suzuki, Toshihide; Hara, Naoki

    2013-04-01

    In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93-133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.

  6. Amine-derived synthetic approach to color-tunable InP/ZnS quantum dots with high fluorescent qualities

    NASA Astrophysics Data System (ADS)

    Song, Woo-Seuk; Lee, Hye-Seung; Lee, Ju Chul; Jang, Dong Seon; Choi, Yoonyoung; Choi, Moongoo; Yang, Heesun

    2013-06-01

    High-quality, Cd-free InP quantum dots (QDs) have been conventionally synthesized by exclusively selecting tris(trimethylsilyl)phosphine (P(TMS)3) as a phosphorus (P) precursor, which is problematic from the standpoint of green and economic chemistry. Thus, other synthetic chemistries adopting alternative P sources to P(TMS)3 have been introduced, however, they could not guarantee the production of satisfactorily fluorescence-efficient, color-pure InP QDs. In this study, the unprecedented controlled synthesis of a series of band-gap-tuned InP QDs is demonstrated through a hot-injection of a far safer and cheaper tris(dimethylamino)phosphine in the presence of a key coordinating solvent of oleylamine that enables successful QD nucleation/growth. Effects of the co-existence of Zn additive, the core growth temperature, and the amount of P source injected on the growth behaviors of InP QD are investigated. After ZnS overcoating by a successive injection of 1-dodecanethiol only, high-fluorescence-quality, green-to-red color emission-tunable core/shell QDs of InP/ZnS are obtained. The fluorescent characteristics of different color-emitting QDs desirably exhibit little fluctuations in quantum yield and emission bandwidth, specifically ranging 51-53 % and 60-64 nm, respectively. Lastly, the utility of the introduction of a secondary shelling process in rendering the QDs are more bright, photostable is also proved.

  7. Speciation and diurnal variation of thoracic, fine thoracic and sub-micrometer airborne particulate matter at naturally ventilated office environments

    NASA Astrophysics Data System (ADS)

    Horemans, Benjamin; Van Grieken, René

    2010-04-01

    Thoracic (PM 10), fine thoracic (PM 2.5) and sub-micrometer (PM 1) airborne particulate matter was sampled during day and night. In total, about 100 indoor and outdoor samples were collected for each fraction at ten different office environments. Energy-dispersive X-ray fluorescence spectrometry and ion chromatography were applied for the quantification of some major and minor elements and ions in the collected aerosols. During daytime, mass concentrations were in the ranges: 11-29, 8.1-24, and 6.6-18 μg m -3, with averages of 20 ± 1, 15.0 ± 0.9, and 11.0 ± 0.8 μg m -3, respectively. At night, mass concentrations were found to be significantly lower for all fractions. Indoor PM 1 concentrations exceeded the corresponding outdoor levels during office hours and were thought to be elevated by office printers. Particles with diameters between 1 and 2.5 μm and 2.5 and 10 μm were mainly associated with soil dust elements and were clearly subjected to distinct periods of settling/resuspension. Indoor NO 3- levels were found to follow specific microclimatic conditions at the office environments, while daytime levels of sub-micrometer Cl - were possibly elevated by the use of Cl-containing cleaning products. Indoor carbon black concentrations were sometimes as high as 22 μg m -3 and were strongly correlated with outdoor traffic conditions.

  8. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    NASA Astrophysics Data System (ADS)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2017-02-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  9. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

    NASA Technical Reports Server (NTRS)

    Qui, Y.; Uhl, D.; Keo, S.

    2003-01-01

    Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

  10. Design optimization and tolerance analysis of a spot-size converter for the taper-assisted vertical integration platform in InP.

    PubMed

    Tolstikhin, Valery; Saeidi, Shayan; Dolgaleva, Ksenia

    2018-05-01

    We report on the design optimization and tolerance analysis of a multistep lateral-taper spot-size converter based on indium phosphide (InP), performed using the Monte Carlo method. Being a natural fit to (and a key building block of) the regrowth-free taper-assisted vertical integration platform, such a spot-size converter enables efficient and displacement-tolerant fiber coupling to InP-based photonic integrated circuits at a wavelength of 1.31 μm. An exemplary four-step lateral-taper design featuring 0.35 dB coupling loss at optimal alignment of a standard single-mode fiber; ≥7  μm 1 dB displacement tolerance in any direction in a facet plane; and great stability against manufacturing variances is demonstrated.

  11. Waveform synthesizer

    DOEpatents

    Franks, Larry A.; Nelson, Melvin A.

    1981-01-01

    A method of producing optical and electrical pulses of desired shape. An optical pulse of arbitrary but defined shape illuminates one end of an array of optical fiber waveguides of differing lengths to time differentiate the input pulse. The optical outputs at the other end of the array are combined to form a synthesized pulse of desired shape.

  12. Large increase in fracture resistance of stishovite with crack extension less than one micrometer

    PubMed Central

    Yoshida, Kimiko; Wakai, Fumihiro; Nishiyama, Norimasa; Sekine, Risako; Shinoda, Yutaka; Akatsu, Takashi; Nagoshi, Takashi; Sone, Masato

    2015-01-01

    The development of strong, tough, and damage-tolerant ceramics requires nano/microstructure design to utilize toughening mechanisms operating at different length scales. The toughening mechanisms so far known are effective in micro-scale, then, they require the crack extension of more than a few micrometers to increase the fracture resistance. Here, we developed a micro-mechanical test method using micro-cantilever beam specimens to determine the very early part of resistance-curve of nanocrystalline SiO2 stishovite, which exhibited fracture-induced amorphization. We revealed that this novel toughening mechanism was effective even at length scale of nanometer due to narrow transformation zone width of a few tens of nanometers and large dilatational strain (from 60 to 95%) associated with the transition of crystal to amorphous state. This testing method will be a powerful tool to search for toughening mechanisms that may operate at nanoscale for attaining both reliability and strength of structural materials. PMID:26051871

  13. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzagmore » directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. Lastly, the correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.« less

  14. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    DOE PAGES

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; ...

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzagmore » directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. Lastly, the correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.« less

  15. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene.

    PubMed

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.

  16. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhao, Yu, E-mail: yu.zhao@insa-rennes.fr; Bertru, Nicolas; Folliot, Hervé

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to themore » surface energy changes induced by Sb atoms on surface.« less

  17. A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

    NASA Astrophysics Data System (ADS)

    Hongfei, Yao; Yuxiong, Cao; Danyu, Wu; Xiaoxi, Ning; Yongbo, Su; Zhi, Jin

    2013-07-01

    A two-stage MMIC power amplifier has been realized by use of a 1-μm InP double heterojunction bipolar transistor (DHBT). The cascode structure, low-loss matching networks, and low-parasite cell units enhance the power gain. The optimum load impedance is determined from load-pull simulation. A coplanar waveguide transmission line is adopted for its ease of fabrication. The chip size is 1.5 × 1.7 mm2 with the emitter area of 16 × 1 μm × 15 μm in the output stage. Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB. The high power gain makes it very suitable for medium power amplification.

  18. Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

    NASA Astrophysics Data System (ADS)

    Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

    2017-10-01

    We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

  19. Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

    NASA Astrophysics Data System (ADS)

    Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

    2018-04-01

    The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

  20. Ultrathin gold nanoribbons synthesized within the interior cavity of a self-assembled peptide nanoarchitecture.

    PubMed

    Tomizaki, Kin-ya; Wakizaka, Shota; Yamaguchi, Yuichi; Kobayashi, Akitsugu; Imai, Takahito

    2014-01-28

    There is increasing interest in gold nanocrystals due to their unique physical, chemical, and biocompatible properties. In order to develop a template-assisted method for the fabrication of gold nanocrystals, we demonstrate here the de novo design and synthesis of a β-sheet-forming nonapeptide (RU006: Ac-AIAKAXKIA-NH2, X = L-2-naphthylalanine) which undergoes self-assembly to form disk-like nanoarchitectures approximately 100 nm wide and 2.5 nm high. These self-assemblies tend to form a network of higher-order assemblies in ultrapure water. Using RU006 as a template molecule, we fabricated ultrathin gold nanoribbons 50-100 nm wide, 2.5 nm high, and micrometers long without external reductants. Furthermore, in order to determine the mechanism of ultrathin gold nanoribbon formation, we synthesized four different RU006 analogues. On the basis of the results obtained using RU006 and these analogues, we propose the following mechanism for the self-assembly of RU006. First, RU006 forms a network by the cooperative association of disk-like assemblies in the presence of AuCl4(-) ions that are encapsulated and concentrated within the interior cavity of the network architectures. This is followed by electron transfer from the naphthalene rings to Au(III), resulting in slow growth to form ultrathin gold nanoribbons along the template network architectures under ambient conditions. The resulting ribbons retain the dimensions of the cavity of the template architecture. Our approach will allow the construction of diverse template architectural morphologies and will find applications in the construction of a variety of metallic nanoarchitectures.

  1. A detailed study of the photo-injection annealing of thermally diffused InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, R. J.; Summers, G. P.; Bruening, J.

    1993-01-01

    A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

  2. Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces.

    PubMed

    Aizawa, Masato; Buriak, Jillian M

    2005-06-29

    Patterning of semiconductor surfaces is an area of intense interest, not only for technological applications, such as molecular electronics, sensing, cellular recognition, and others, but also for fundamental understanding of surface reactivity, general control over surface properties, and development of new surface reactivity. In this communication, we describe the use of self-assembling block copolymers to direct semiconductor surface chemistry in a spatially defined manner, on the nanoscale. The proof-of-principle class of reactions evaluated here is galvanic displacement, in which a metal ion, M+, is reduced to M0 by the semiconductor, including Si, Ge, InP, and GaAs. The block copolymer chosen has a polypyridine block which binds to the metal ions and brings them into close proximity with the surface, at which point they undergo reaction; the pattern of resulting surface chemistry, therefore, mirrors the nanoscale structure of the parent block copolymer. This chemistry has the added advantage of forming metal nanostructures that result in an alloy or intermetallic at the interface, leading to strongly bound metal nanoparticles that may have interesting electronic properties. This approach has been shown to be very general, functioning on a variety of semiconductor substrates for both silver and gold deposition, and is being extended to organic and inorganic reactions on a variety of conducting, semiconducting, and insulating substrates.

  3. NASA advanced space photovoltaic technology-status, potential and future mission applications

    NASA Technical Reports Server (NTRS)

    Flood, Dennis J.; Piszczor, Michael, Jr.; Stella, Paul M.; Bennett, Gary L.

    1989-01-01

    The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 micrometer) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

  4. Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

    PubMed

    Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan

    2013-08-15

    Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

  5. The start-up phase of the national satellite forest monitoring systems for DRC and PNG: a joint venture between FAO and INPE

    NASA Astrophysics Data System (ADS)

    Jonckheere, I. G.; FAO UN-REDD Team Forestry Department

    2011-12-01

    Reducing Emissions from Deforestation and Forest Degradation (REDD) is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. "REDD+" goes beyond deforestation and forest degradation, and includes the role of conservation, sustainable management of forests and enhancement of forest carbon stocks. In the framework of getting countries ready for REDD+, the UN-REDD Programme, a partnership between UNEP, FAO and UNDP, assists developing countries to prepare and implement national REDD+ strategies. Designed collaboratively by a broad range of stakeholders, national UN-REDD Programmes are informed by the technical expertise of FAO, UNDP and UNEP. For the monitoring, reporting and verification, FAO supports the countries to develop satellite forest monitoring systems that allow for credible measurement, reporting and verification (MRV)of REDD+ activities. These are among the most critical elements for the successful implementation of any REDD+ mechanism, also following the COP 16 decisions in Cancun last year. The UN-REDD Programme through a joint effort of FAO and Brazil's National Space Agency, INPE, is supporting countries to develop cost-effective, robust and compatible national monitoring and MRV systems, providing tools, methodologies, training and knowledge sharing that help countries to strengthen their technical and institutional capacity for effective MRV systems. To develop strong nationally-owned forest monitoring systems, technical and institutional capacity building is key. The UN-REDD Programme, through FAO, has taken on intensive training together with INPE, and has provided technical help and assistance for in-country training and implementation for national satellite forest monitoring. The goal of the start-up phase for DRC and Papua New Guinea (PNG) in this capacity building effort is the

  6. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven.more » Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.« less

  7. >100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

    NASA Astrophysics Data System (ADS)

    Wang, C. S.; Koda, R.; Huntington, A. S.; Gossard, A. C.; Coldren, L. A.

    2005-04-01

    High-quality InAlGaAs digital-alloy active regions using submonolayer superlattices were developed and employed in a 3-stage bipolar cascade multiple-active-region vertical cavity surface emitting laser (VCSEL) design. The photoluminescence intensity and linewidth of these active regions were optimized by varying the substrate temperature and digitization period. These active regions exhibit considerable improvement over previously developed digital-alloy active regions and are comparable to analog-alloy active regions. Multiple-active-region VCSELs, grown all-epitaxially by MBE on InP, demonstrate greater than 100% output differential efficiency at 1.55-μm emission. A record high 104% output differential efficiency was achieved for a 3-stage long-wavelength VCSEL.

  8. Reactanceless synthesized impedance bandpass amplifier

    NASA Technical Reports Server (NTRS)

    Kleinberg, L. L. (Inventor)

    1985-01-01

    An active R bandpass filter network is formed by four operational amplifier stages interconnected by discrete resistances. One pair of stages synthesize an equivalent input impedance of an inductance (L sub eq) in parallel with a discrete resistance (R sub o) while the second pair of stages synthesizes an equivalent input impedance of a capacitance (C sub eq) serially coupled to another discrete resistance (R sub i) coupled in parallel with the first two stages. The equivalent input impedances aggregately define a tuned resonant bandpass filter in the roll-off regions of the operational amplifiers.

  9. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  10. Toward lanthanide containing coordination polymers and nanomaterials

    NASA Astrophysics Data System (ADS)

    Greig, Natalie E.

    The focus of this thesis is to develop lanthanide (Ln) luminescent materials through the exploration of coordination polymers and nanomaterials. Herein, dimethyl-3,4-furanedicarboxylate acid undergoes hydrolysis under hydrothermal conditions to form coordination polymers with lanthanide ions. The resulting coordination polymers exhibited luminescent properties, with quantum yields and lifetimes for the Eu- and Tb-CP of 1.14±0.31% and 0.387±0.0001 ms, and 3.33±0.82% and 0.769±0.006 ms, respectively. While the incorporation of lanthanides was not achieved in this work, progress toward the production of pure phase InP in the nanoregime has been made, using a low-cost, hydrothermal method. Though SEM and PXRD conflict, it is believed that pure InP particles with a size range of 58-81 nm were successfully synthesized.

  11. A Rotating Coil Apparatus with Sub-Micrometer Magnetic Center Measurement Stability

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Spencer, Cherrill M.; Anderson, Scott, D.; Jensen, David R.

    2005-12-02

    A rotating double coil apparatus has been designed and built so that the relative magnetic center change of a quadrupole is measured to an uncertainty smaller than 0.02 micrometers (=micron, {micro}m) for a single measurement. Furthermore, repeated measurements over about an hour vary by less than 0.1 {micro}m and by less than 1 {micro}m for periods of 24 hrs or longer. Correlation analyses of long data runs show that the magnet center measurement is sensitive to mechanical effects, such as vibration and rotating part wear, as well as to environmental effects, such as temperature and relative humidity. Evolving apparatus designmore » has minimized mechanical noise and environmental isolation has reduced the effects of the surrounding environment so that sub-micron level measurement uncertainties and micron level stability have been achieved for multi-day measurement periods. Apparatus design evolution will be described in detail and correlation data taken on water-cooled electromagnet and adjustable permanent quadrupoles, which are about 350 mm in overall length, will be shown. These quads were prototypes for the linac quads of the Next Linear Collider (NLC) that had to meet the requirement that their magnetic centers change less than 1 micron during a 20% change in field strength. Thus it was necessary to develop an apparatus that could track the magnetic center with a fraction of a micron uncertainty.« less

  12. Statistical analysis and parameterization of the hygroscopic growth of the sub-micrometer urban background aerosol in Beijing

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Wu, Zhijun; Ma, Nan; Wu, Yusheng; Zeng, Limin; Zhao, Chunsheng; Wiedensohler, Alfred

    2018-02-01

    The take-up of water of aerosol particles plays an important role in heavy haze formation over North China Plain, since it is related with particle mass concentration, visibility degradation, and particle chemistry. In the present study, we investigated the size-resolved hygroscopic growth factor (HGF) of sub-micrometer aerosol particles (smaller than 350 nm) on a basis of 9-month Hygroscopicity-Tandem Differential Mobility Analyzer measurement in the urban background atmosphere of Beijing. The mean hygroscopicity parameter (κ) values derived from averaging over the entire sampling period for particles of 50 nm, 75 nm, 100 nm, 150 nm, 250 nm, and 350 nm in diameters were 0.14 ± 0.07, 0.17 ± 0.05, 0.18 ± 0.06, 0.20 ± 0.07, 0.21 ± 0.09, and 0.23 ± 0.12, respectively, indicating the dominance of organics in the sub-micrometer urban aerosols. In the spring, summer, and autumn, the number fraction of hydrophilic particles increased with increasing particle size, resulting in an increasing trend of overall particle hygroscopicity with enhanced particle size. Differently, the overall mean κ values peaked in the range of 75-150 nm and decreased for particles larger than 150 nm in diameter during wintertime. Such size-dependency of κ in winter was related to the strong primary particle emissions from coal combustion during domestic heating period. The number fraction of hydrophobic particles such as freshly emitted soot decreased with increasing PM2.5 mass concentration, indicating aged and internal mixed particles were dominant in the severe particulate matter pollution. Parameterization schemes of the HGF as a function of relative humidity (RH) and particle size between 50 and 350 nm were determined for different seasons and pollution levels. The HGFs calculated from the parameterizations agree well with the measured HGFs at 20-90% RH. The parameterizations can be applied to determine the hygroscopic growth of aerosol particles at ambient conditions for the area

  13. Progress in p(+)n InP solar cells fabricated by thermal diffusion

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Weinberg, I.; Fatemi, N. S.; Vargas-Aburto, Carlos; Goradia, C.; Goradia, Manju

    1992-01-01

    In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

  14. Mayenite Synthesized Using the Citrate Sol-Gel Method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ude, Sabina N; Rawn, Claudia J; Meisner, Roberta A

    2014-01-01

    A citrate sol-gel method has been used to synthesize mayenite (Ca12Al14O33). X-ray powder diffraction data show that the samples synthesized using the citrate sol-gel method contained CaAl2O4 and CaCO3 along with mayenite when fired ex-situ in air at 800 C but were single phase when fired at 900 C and above. Using high temperature x-ray diffraction, data collected in-situ in air at temperatures of 600 C and below showed only amorphous content; however, data collected at higher temperatures indicated the first phase to crystallize is CaCO3. High temperature x-ray diffraction data collected in 4% H2/96% N2 does not show themore » presence of CaCO3, and Ca12Al14O33 starts to form around 850 C. In comparison, x-ray powder diffraction data collected ex-situ on samples synthesized using traditional solid-state synthesis shows that single phase was not reached until samples were fired at 1350 C. DTA/TGA data collected either in a nitrogen environment or air on samples synthesized using the citrate gel method suggest the complete decomposition of metastable phases and the formation of mayenite at 900 C, although the phase evolution is very different depending on the environment. Brunauer-Emmett-Teller (BET) measurements showed a slightly higher surface area of 7.4 0.1 m2/g in the citrate gel synthesized samples compared to solid-state synthesized sample with a surface area of 1.61 0.02 m2/g. SEM images show a larger particle size for samples synthesized using the solid-state method compared to those synthesized using the citrate gel method.« less

  15. Synthesizing Regression Results: A Factored Likelihood Method

    ERIC Educational Resources Information Center

    Wu, Meng-Jia; Becker, Betsy Jane

    2013-01-01

    Regression methods are widely used by researchers in many fields, yet methods for synthesizing regression results are scarce. This study proposes using a factored likelihood method, originally developed to handle missing data, to appropriately synthesize regression models involving different predictors. This method uses the correlations reported…

  16. Photonics-based microwave frequency measurement using a double-sideband suppressed-carrier modulation and an InP integrated ring-assisted Mach-Zehnder interferometer filter.

    PubMed

    Fandiño, Javier S; Muñoz, Pascual

    2013-11-01

    A photonic system capable of estimating the unknown frequency of a CW microwave tone is presented. The core of the system is a complementary optical filter monolithically integrated in InP, consisting of a ring-assisted Mach-Zehnder interferometer with a second-order elliptic response. By simultaneously measuring the different optical powers produced by a double-sideband suppressed-carrier modulation at the outputs of the photonic integrated circuit, an amplitude comparison function that depends on the input tone frequency is obtained. Using this technique, a frequency measurement range of 10 GHz (5-15 GHz) with a root mean square value of frequency error lower than 200 MHz is experimentally demonstrated. Moreover, simulations showing the impact of a residual optical carrier on system performance are also provided.

  17. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

    PubMed Central

    2012-01-01

    We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. PMID:22277096

  18. Low-cost, high-precision micro-lensed optical fiber providing deep-micrometer to deep-nanometer-level light focusing.

    PubMed

    Wen, Sy-Bor; Sundaram, Vijay M; McBride, Daniel; Yang, Yu

    2016-04-15

    A new type of micro-lensed optical fiber through stacking appropriate high-refractive microspheres at designed locations with respect to the cleaved end of an optical fiber is numerically and experimentally demonstrated. This new type of micro-lensed optical fiber can be precisely constructed with low cost and high speed. Deep micrometer-scale and submicrometer-scale far-field light spots can be achieved when the optical fibers are multimode and single mode, respectively. By placing an appropriate teardrop dielectric nanoscale scatterer at the far-field spot of this new type of micro-lensed optical fiber, a deep-nanometer near-field spot can also be generated with high intensity and minimum joule heating, which is valuable in high-speed, high-resolution, and high-power nanoscale detection compared with traditional near-field optical fibers containing a significant portion of metallic material.

  19. Spatially Resolved Imaging at 350 Micrometers of Cold Dust in Nearby Elliptical Galaxies

    NASA Technical Reports Server (NTRS)

    Leeuw, Lerothodi L.; Davidson, Jacqueline; Dowell, C. Darren; Matthews, Henry E.

    2008-01-01

    Continuum observations at 350 micrometers of seven nearby elliptical galaxies for which CO gas disks have recently been resolved with interferometry mapping are presented. These SHARC II mapping results provide the first clearly resolved far-infrared (FIR)-to-submillimeter continuum emission from cold dust (with temperatures 31 K is approximately greater than T approximately greater than 23 K) of any elliptical galaxy at a distance greater than 40 Mpc. The measured FIR excess shows that the most likely and dominant heating source of this dust is not dilute stellar radiation or cooling flows, but rather star formation that could have been triggered by an accretion or merger event and fueled by dust-rich material that has settled in a dense region cospatial with the central CO gas disks. The dust is detected even in two cluster ellipticals that are deficient in H (sub I), showing that, unlike H (sub I), cold dust and CO in ellipticals can survive in the presence of hot X-ray gas, even in galaxy clusters. No dust cooler than 20 K, either distributed outside the CO disks or cospatial with and heated by the entire dilute stellar optical galaxy (or very extended H (sub I)), is currently evident.

  20. A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology

    NASA Astrophysics Data System (ADS)

    Aytar, Oktay; Tangel, Ali; Afacan, Engin

    2017-11-01

    This paper presents design and simulation of a 4-bit 10 GS/s time interleaved ADC in 0.25 micrometer CMOS technology. The designed TI-ADC has 4 channels including 4-bit flash ADC in each channel, in which area and power efficiency are targeted. Therefore, basic standard cell logic gates are preferred. Meanwhile, the aspect ratios in the gate designs are kept as small as possible considering the speed performance. In the literature, design details of the timing control circuits have not been provided, whereas the proposed timing control process is comprehensively explained and design details of the proposed timing control process are clearly presented in this study. The proposed circuits producing consecutive pulses for timing control of the input S/H switches (ie the analog demultiplexer front-end circuitry) and the very fast digital multiplexer unit at the output are the main contributions of this study. The simulation results include +0.26/-0.22 LSB of DNL and +0.01/-0.44 LSB of INL, layout area of 0.27 mm2, and power consumption of 270 mW. The provided power consumption, DNL and INL measures are observed at 100 MHz input with 10 GS/s sampling rate.

  1. [Safety and health in workers employed in industry. Data from Industrial Accidents Compensation Board (INAIL) and National Social Security Institute (INPS), Veneto Region, 1994-2002].

    PubMed

    Mastrangelo, G; Carassai, Patrizia; Carletti, Claudia; Cattani, F; De Zorzi, Lia; Di Loreto, G; Dini, M; Mattioni, G; Mundo, Antonietta; Noceta, R; Ortolani, G; Piccioni, M; Sartori, Angela; Sereno, Antonella; Priolo, G; Scoizzato, L; Marangi, G; Marchiori, L

    2008-01-01

    A decreasing time trend for occupational injuries and sickness absence would be the effect of the new legislation (D.Lgs. 626/94 and successive laws) on prevention in occupational settings. Conversely, the reduction of INPS disability would reflect a health improvement due to non-occupational causes. The aim of the study was to investigate the efficacy of the new legislation among employees in industry (where the law was mainly applied), via the time trend of three standardized rates in the Veneto Region. The numerator for the rate of occupational accidents (cases occurring in industry workers in the Veneto Region, broken down for sex, age and calendar years) was supplied by INAIL. The denominator for the above rate, as well as numerators and denominators for disability and sickness absence were supplied by INPS. Data were available from 1994 to 2002 for accidents and disability, and from 1997 to 2002 for sickness absence. In every year from 1994 to 2002, the rates were standardized for age and sex with the direct method, using an internal "standard" population. The time trend of year-specific standardized rates was analyzed by Joinpoint regression software. Among industrial workers in the Veneto Region, occupational accidents increased by 0.4% yearly, while disability decreased by 2.56% from 1994 to 2002. Sick absence increased up to 1999, then decreased. This epidemiological pattern is difficult to explain. The increase in accidents could be due to the increase of non-European Union workers and/or to the fact that accidents on the way to or from work were recognized as occupational accidents by INAIL starting from 2000. Both these phenomena could have contributed to increase the rate that was otherwise diminishing. On the other hand, this same situation could be due to insufficient efficacy of the legislation (D.Lgs. 626/94 and successive laws) for preventing occupational accidents and diseases.

  2. VCO PLL Frequency Synthesizers for Spacecraft Transponders

    NASA Technical Reports Server (NTRS)

    Smith, Scott; Mysoor, Narayan; Lux, James; Cook, Brian

    2007-01-01

    Two documents discuss a breadboard version of advanced transponders that, when fully developed, would be installed on future spacecraft to fly in deep space. These transponders will be required to be capable of operation on any deepspace- communications uplink frequency channel between 7,145 and 7,235 MHz, and any downlink frequency channel between 8,400 and 8,500 MHz. The document focuses on the design and operation of frequency synthesizers for the receiver and transmitter. Heretofore, frequency synthesizers in deep-space transponders have been based on dielectric resonator oscillators (DROs), which do not have the wide tuning bandwidth necessary to tune over all channels in the uplink or downlink frequency bands. To satisfy the requirement for tuning bandwidth, the present frequency synthesizers are based on voltage-controlled-oscillator (VCO) phase-locked loops (PLLs) implemented by use of monolithic microwave integrated circuits (MMICs) implemented using inGaP heterojunction bipolar transistor (HBT) technology. MMIC VCO PLL frequency synthesizers similar to the present ones have been used in commercial and military applications but, until now, have exhibited too much phase noise for use in deep-space transponders. The present frequency synthesizers contain advanced MMIC VCOs, which use HBT technology and have lower levels of flicker (1/f) phase noise. When these MMIC VCOs are used with high-speed MMIC frequency dividers, it becomes possible to obtain the required combination of frequency agility and low phase noise.

  3. The Synergistic Effect of Leukocyte Platelet-Rich Fibrin and Micrometer/Nanometer Surface Texturing on Bone Healing around Immediately Placed Implants: An Experimental Study in Dogs

    PubMed Central

    Neiva, Rodrigo F.; Gil, Luiz Fernando; Tovar, Nick; Janal, Malvin N.; Marao, Heloisa Fonseca; Pinto, Nelson; Coelho, Paulo G.

    2016-01-01

    Aims. This study evaluated the effects of L-PRF presence and implant surface texture on bone healing around immediately placed implants. Methods. The first mandibular molars of 8 beagle dogs were bilaterally extracted, and implants (Blossom™, Intra-Lock International, Boca Raton, FL) were placed in the mesial or distal extraction sockets in an interpolated fashion per animal. Two implant surfaces were distributed per sockets: (1) dual acid-etched (DAE, micrometer scale textured) and (2) micrometer/nanometer scale textured (Ossean™ surface). L-PRF (Intraspin system, Intra-Lock International) was placed in a split-mouth design to fill the macrogap between implant and socket walls on one side of the mandible. The contralateral side received implants without L-PRF. A mixed-model ANOVA (at α = 0.05) evaluated the effect of implant surface, presence of L-PRF, and socket position (mesial or distal), individually or in combination on bone area fraction occupancy (BAFO). Results. BAFO values were significantly higher for the Ossean relative to the DAE surface on the larger mesial socket. The presence of L-PRF resulted in higher BAFO. The Ossean surface and L-PRF presence resulted in significantly higher BAFO. Conclusion. L-PRF and the micro-/nanometer scale textured surface resulted in increased bone formation around immediately placed implants. PMID:28042577

  4. Method For Synthesizing Extremely High-Temperature Melting Materials

    DOEpatents

    Saboungi, Marie-Louise; Glorieux, Benoit

    2005-11-22

    The invention relates to a method of synthesizing high-temperature melting materials. More specifically the invention relates to a containerless method of synthesizing very high temperature melting materials such as borides, carbides and transition-metal, lanthanide and actinide oxides, using an Aerodynamic Levitator and a laser. The object of the invention is to provide a method for synthesizing extremely high-temperature melting materials that are otherwise difficult to produce, without the use of containers, allowing the manipulation of the phase (amorphous/crystalline/metastable) and permitting changes of the environment such as different gaseous compositions.

  5. Method for synthesizing extremely high-temperature melting materials

    DOEpatents

    Saboungi, Marie-Louise; Glorieux, Benoit

    2007-11-06

    The invention relates to a method of synthesizing high-temperature melting materials. More specifically the invention relates to a containerless method of synthesizing very high temperature melting materials such as carbides and transition-metal, lanthanide and actinide oxides, using an aerodynamic levitator and a laser. The object of the invention is to provide a method for synthesizing extremely high-temperature melting materials that are otherwise difficult to produce, without the use of containers, allowing the manipulation of the phase (amorphous/crystalline/metastable) and permitting changes of the environment such as different gaseous compositions.

  6. Method for Synthesizing Extremeley High Temperature Melting Materials

    DOEpatents

    Saboungi, Marie-Louise and Glorieux, Benoit

    2005-11-22

    The invention relates to a method of synthesizing high-temperature melting materials. More specifically the invention relates to a containerless method of synthesizing very high temperature melting materials such as borides, carbides and transition-metal, lanthanide and actinide oxides, using an Aerodynamic Levitator and a laser. The object of the invention is to provide a method for synthesizing extremely high-temperature melting materials that are otherwise difficult to produce, without the use of containers, allowing the manipulation of the phase (amorphous/crystalline/metastable) and permitting changes of the environment such as different gaseous compositions.

  7. Aeon: Synthesizing Scheduling Algorithms from High-Level Models

    NASA Astrophysics Data System (ADS)

    Monette, Jean-Noël; Deville, Yves; van Hentenryck, Pascal

    This paper describes the aeon system whose aim is to synthesize scheduling algorithms from high-level models. A eon, which is entirely written in comet, receives as input a high-level model for a scheduling application which is then analyzed to generate a dedicated scheduling algorithm exploiting the structure of the model. A eon provides a variety of synthesizers for generating complete or heuristic algorithms. Moreover, synthesizers are compositional, making it possible to generate complex hybrid algorithms naturally. Preliminary experimental results indicate that this approach may be competitive with state-of-the-art search algorithms.

  8. Isotope ratio analysis of individual sub-micrometer plutonium particles with inductively coupled plasma mass spectrometry.

    PubMed

    Esaka, Fumitaka; Magara, Masaaki; Suzuki, Daisuke; Miyamoto, Yutaka; Lee, Chi-Gyu; Kimura, Takaumi

    2010-12-15

    Information on plutonium isotope ratios in individual particles is of great importance for nuclear safeguards, nuclear forensics and so on. Although secondary ion mass spectrometry (SIMS) is successfully utilized for the analysis of individual uranium particles, the isobaric interference of americium-241 to plutonium-241 makes difficult to obtain accurate isotope ratios in individual plutonium particles. In the present work, an analytical technique by a combination of chemical separation and inductively coupled plasma mass spectrometry (ICP-MS) is developed and applied to isotope ratio analysis of individual sub-micrometer plutonium particles. The ICP-MS results for individual plutonium particles prepared from a standard reference material (NBL SRM-947) indicate that the use of a desolvation system for sample introduction improves the precision of isotope ratios. In addition, the accuracy of the (241)Pu/(239)Pu isotope ratio is much improved, owing to the chemical separation of plutonium and americium. In conclusion, the performance of the proposed ICP-MS technique is sufficient for the analysis of individual plutonium particles. Copyright © 2010 Elsevier B.V. All rights reserved.

  9. Observations of the 10 micrometer natural laser emission from the mesospheres of Mars and Venus

    NASA Technical Reports Server (NTRS)

    Deming, D.; Espenak, F.; Jennings, D.; Kostiuk, T.; Mumma, M. J.

    1983-01-01

    Observations of the total flux and center to limb dependence of the nonthermal emission occurring in the cores of the 9.4 and 10.4 micrometers CO2 bands on Mars are compared to a theoretical model based on this mechanism. The model successfully reproduces the observed center to limb dependence of this emission, to within the limits imposed by the spatial resolution of the observations of Mars and Venus. The observed flux from Mars agrees closely with the prediction of the model; the flux observed from Venus is 74% of the flux predicted by the model. This emission is used to obtain the kinetic temperatures of the Martian and Venusian mesospheres. For Mars near 70 km altitude, a rotational temperature analysis using five lines gives T = 135 + or - 20 K. The frequency width of the emission is also analyzed to derive a temperature of 126 + or - 6 K. In the case of the Venusian mesosphere near 109 km, the frequency width of the emission gives T = 204 + or - 10 K.

  10. Programmable electronic synthesized capacitance

    NASA Technical Reports Server (NTRS)

    Kleinberg, Leonard L. (Inventor)

    1987-01-01

    A predetermined and variable synthesized capacitance which may be incorporated into the resonant portion of an electronic oscillator for the purpose of tuning the oscillator comprises a programmable operational amplifier circuit. The operational amplifier circuit has its output connected to its inverting input, in a follower configuration, by a network which is low impedance at the operational frequency of the circuit. The output of the operational amplifier is also connected to the noninverting input by a capacitor. The noninverting input appears as a synthesized capacitance which may be varied with a variation in gain-bandwidth product of the operational amplifier circuit. The gain-bandwidth product may, in turn, be varied with a variation in input set current with a digital to analog converter whose output is varied with a command word. The output impedance of the circuit may also be varied by the output set current. This circuit may provide very small ranges in oscillator frequency with relatively large control voltages unaffected by noise.

  11. The Infrared Spectra of Polycyclic Aromatic Hydrocarbons with Excess Peripheral H Atoms (H(sub n)-PAHs) and their Relation to the 3.4 and 6.9 Micrometer PAH Emission Features

    NASA Technical Reports Server (NTRS)

    Sandford, Scott A.; Bernstein, Max P.; Materese, Christopher K.

    2013-01-01

    A population of polycyclic aromatic hydrocarbons (PAHs) and related materials are thought to be responsible for the family of infrared emission features that are seen towards a wide variety of astrophysical environments. A potentially important subclass of these materials are polycyclic aromatic hydrocarbons whose edges contain excess H atoms (H(sub n)-PAHs). While it has been suggested that this type of compound may be present in the interstellar population, it has been difficult to properly assess this possibility because of a lack of suitable infrared laboratory spectra to assist with analysis of the astronomical data. We present the 4000-500 cm(exp -1) (2.5-20 micrometers) infrared spectra of 23 H(sub n)-PAHs and related molecules isolated in argon matrices, under conditions suitable for use in the interpretation of astronomical data. The spectra of molecules with mixed aromatic and aliphatic domains show unique characteristics that distinguish them from their fully aromatic PAH equivalents. We discuss the changes to the spectra of these types of molecules as they transition from fully aromatic to fully aliphatic forms. The implications for the interpretation of astronomical spectra are discussed with specific emphasis on the 3.4 and 6.9 micrometer features. Laboratory data is compared with emission spectra from IRAS 21282+5050, an object with normal PAH emission features, in addition to IRAS 22272+5435 and IRAS 0496+3429, two protoplanetary nebulae with abnormally large 3.4 micrometer features. We show that 'normal' PAH emission objects contain relatively few H(sub n)-PAHs in their emitter populations, but less evolved protoplanetary nebulae may contain significant abundances of these molecules.

  12. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    NASA Technical Reports Server (NTRS)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  13. Characteristic Behavior and Scaling Studies of Self Organized InP Nano-dots formed via keV and MeV irradiations

    NASA Astrophysics Data System (ADS)

    Paramanik, Dipak; Varma, Shikha

    2008-04-01

    The controlled formation of nano-dots, using ion beams as tool, has become important as it offers a unique method to generate non-equilibrium phases with novel physical properties and structures with nano-dimensions. We have investigated the creation of self assembled nano- dots on InP(111) surfaces after 3 keV as well as 1.5 MeV ion beams at a large range of fluences. We have studied the Scaling exponents of the evolved surfaces by utilizing the technique of Scanning Probe Microscopy (SPM). At keV energies ripening of the nano-dots is seen below a critical time whereas an inverse ripening is observed for longer durations. At the critical time square shaped array of nano --dots are observed. The dots are characterized by narrow height and size distributions. Nano dots have also been observed at MeV ion irradiations. Their size distribution though broad at lowest fluence decreases for larger fluences.

  14. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide

    NASA Astrophysics Data System (ADS)

    Haffouz, Sofiane; Zeuner, Katharina D.; Dalacu, Dan; Poole, Philip J.; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D.; Zwiller, Valery; Williams, Robin L.

    2018-05-01

    We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

  15. Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO_{3}/SrTiO_{3} Nanowires.

    PubMed

    Tomczyk, Michelle; Cheng, Guanglei; Lee, Hyungwoo; Lu, Shicheng; Annadi, Anil; Veazey, Joshua P; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Eom, Chang-Beom; Levy, Jeremy

    2016-08-26

    High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO_{3}/SrTiO_{3}-based quantum dots reveal the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here, we report evidence for the micrometer-scale ballistic transport of electron pairs in quasi-1D LaAlO_{3}/SrTiO_{3} nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at a zero magnetic field). Above a critical magnetic field B_{p}, the electron pairs unbind and the conductance oscillations shift with the magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

  16. Asteroid (101955) 1999 RQ36: Spectroscopy from 0.4 to 2.4 Micrometer and Meteorite Analogs

    NASA Technical Reports Server (NTRS)

    Clark, Beth Ellen; Binzel, Richard P.; Howell, Ellen S.; Cloutis, Edward A.; Ockert-Bell, Maureen; Christensen, Phil; Barucci, Maria Antonietta; DeMeo, Francesca; Lauretta, Dante S.; Connolly, Harold, Jr.; hide

    2011-01-01

    We present reflectance spectra from 0.4 to 2.4 ?m of Asteroid (101955) 1999 RQ36, the target of the OSIRIS-REx spacecraft mission. The visible spectral data were obtained at the McDonald Observatory 2.1-m telescope with the ES2 spectrograph. The infrared spectral data were obtained at the NASA Infrared Telescope Facility using the SpeX instrument. The average visible spectrum is combined with the average near-infrared wavelength spectrum to form a composite spectrum. We use three methods to constrain the compositional information in the composite spectrum of Asteroid (101955) 1999 RQ36 (hereafter RQ36). First, we perform a least-squares search for meteorite spectral analogs using 15,000 spectra from the RELAB database. Three most likely meteorite analogs are proposed based on the least-squares search. Next, six spectral parameters are measured for RQ36 and their values are compared with the ranges in parameter values of the carbonaceous chondrite meteorite classes. A most likely meteorite analog group is proposed based on the depth of overlap in parameter values. The results of the least-squares search and the parametric comparisons point to CIs and/or CMs as the most likely meteorite analogs for RQ36, and COs and CHs as the least likely. RQ36 has a spectrally blue continuum slope that is also observed in carbonaceous chondrites containing magnetite. We speculate that RQ36 is composed of a CM1 -like material. Finally, we compare RQ36 to other B-type asteroids measured by Clark et al. (Clark, B.E. et al. [2010]. J. Geophys. Res. 115, E06005). The results of this comparison are inconclusive. RQ36 is comparable to Themis spectral properties in terms of its albedo, visible spectrum, and near-infrared spectrum from 1.1 to 1.45 micrometers. However, RQ36 is more similar to Pallas in terms of its near-infrared spectrum from 1.6 to 2.3 micrometers. Thus it is possible that B-type asteroids form a spectral continuum and that RQ36 is a transitional object, spectrally

  17. DNA damage on nano- and micrometer scales impacts dicentric induction: computer modelling of ion microbeam experiments

    NASA Astrophysics Data System (ADS)

    Friedland, Werner; Kundrat, Pavel; Schmitt, Elke

    2016-07-01

    Detailed understanding of the enhanced relative biological effectiveness (RBE) of ions, in particular at high linear energy transfer (LET) values, is needed to fully explore the radiation risk of manned space missions. It is generally accepted that the enhanced RBE of high-LET particles results from the DNA lesion patterns, in particular DNA double-strand breaks (DSB), due to the spatial clustering of energy deposits around their trajectories. In conventional experiments on biological effects of radiation types of diverse quality, however, clustering of energy deposition events on nanometer scale that is relevant for the induction and local complexity of DSB is inherently interlinked with regional (sub-)micrometer-scale DSB clustering along the particle tracks. Due to this limitation, the role of both (nano- and micrometer) scales on the induction of diverse biological endpoints cannot be frankly separated. To address this issue in a unique way, experiments at the ion microbeam SNAKE [1] and corresponding track-structure based model calculations of DSB induction and subsequent repair with the biophysical code PARTRAC [2] have been performed. In the experiments, hybrid human-hamster A_{L} cells were irradiated with 20 MeV (2.6 keV/μm) protons, 45 MeV (60 keV/μm) lithium ions or 55 MeV (310 keV/μm) carbon ions. The ions were either quasi-homogeneously distributed or focused to 0.5 x 1 μm^{2} spots on regular matrix patterns of 5.4 μm, 7.6 μm and 10.6 μm grid size, with pre-defined particle numbers per spot so as to deposit a mean dose of 1.7 Gy for all irradiation patterns. As expected, the induction of dicentrics by homogeneous irradiation increased with LET: lithium and carbon ions induced about two- and four-fold higher yields of dicentrics than protons. The induction of dicentrics is, however, affected by µm-scale, too: focusing 20 lithium ions or 451 protons per spot on a 10.6 μm grid induced two or three times more dicentrics, respectively, than a

  18. Evaluation of synthesized voice approach callouts /SYNCALL/

    NASA Technical Reports Server (NTRS)

    Simpson, C. A.

    1981-01-01

    The two basic approaches to the generation of 'synthesized' speech include a utilization of analog recorded human speech and a construction of speech entirely from algorithms applied to constants describing speech sounds. Given the availability of synthesized speech displays for man-machine systems, research is needed to study suggested applications for speech and design principles for speech displays. The present investigation is concerned with a study for which new performance measures were developed. A number of air carrier approach and landing accidents during low or impaired visibility have been associated with the absence of approach callouts. The study had the purpose to compare a pilot-not-flying (PNF) approach callout system to a system composed of PNF callouts augmented by an automatic synthesized voice callout system (SYNCALL). Pilots were found to favor the use of a SYNCALL system containing certain modifications.

  19. Autonomous buckling of micrometer-sized lipid-protein membrane patches constructed by Dictyostelium discoideum.

    PubMed

    Takahashi, Kei; Toyota, Taro

    2015-01-01

    The cytosol of amoeba cells controls the membrane deformation during their motion in vivo. To investigate such ability of the cytosol of amoeba cell, Dictyostelium discoideum (Dictyostelium), in vitro, we used lipids extracted from Dictyostelium and commercially available phospholipids, and prepared substrate-supported lipid membrane patches on the micrometer scale by spin coating. We found that the spin coater holder, which has pores (pore size = 3.1 mm) of negative pressure to hold the cover glass induced the concave surface of the cover glass. The membrane lipid patches were formed at each position in the vicinity of the holder pores and their sizes were in the range of 2.7 to 3.2 × 10(4) μm(2). After addition of the cytosol extracted from Dictyostelium to the lipid membrane patches, through time-lapse observation with a confocal laser scanning fluorescence microscope, we observed an autonomous buckling of the Dictyostelium lipid patches and localized behaviours of proteins found within. The current method serves as the novel technique for the preparation of film patches in which the positions of patches are controlled by the holder pores without fabricating, modifying, and arranging the chemical properties of the solution components of lipids. The findings imply that lipid-binding proteins in the cytosol were adsorbed and accumulated within the Dictyostelium lipid patches, inducing the transformation of the cell-sized patch.

  20. The microprocessor-based synthesizer controller

    NASA Technical Reports Server (NTRS)

    Wick, M. R.

    1980-01-01

    Implementation and performance of the microprocessor-based controllers and Dana Digiphase Synthesizer (DCO) installed in the Deep Space Network exciter in the 64-meter and 34-meter subnets to support uplink tuning required for the Voyager-Saturn Encounter is discussed. Test data in tests conducted during the production of the controllers verified the design objective for phase control accuracy of 10 to the - 12 power cycles in eight hours during ramping. Tests conducted require a phase error between a theoretical calculated value and the actual phase of no greater than + or - 1 cycle. Tests included (1) a ramp over a period of eight hours using a ramp rate which covers the synthesizer tuning range (40-51 MHz) and (2) a ramp sequence using the maximum rate (+ or kHz/s) over the tuning range.