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Sample records for synthesize inp micrometer

  1. Efficient rapid microwave-assisted route to synthesize InP micrometer hollow spheres

    SciTech Connect

    Zheng Xiuwen Hu Qitu; Sun Chuansheng

    2009-01-08

    The efficiencies of two methods of synthesizing InP micro-scale hollow spheres are compared via the analogous solution-liquid-solid (ASLS) growth mechanism, either through a traditional solvothermal procedure, or via a microwave-assisted method. Scanning electronic microscopy (SEM) images show that most of the as-grown samples are micrometer hollow spheres, which indicates the efficiency of both methods. For traditional solvothermal route, long time (10 h) is necessary to obtain the desired samples, however, for the microwave-assisted route, 30 min is enough for hollow spherical products. An optimal choice of microwave irradiating time allows reducing the reaction time from hours to minutes. The proposed ASLS growth mechanism has also been discussed in detail.

  2. Efficient removal of heavy metal ions with biopolymer template synthesized mesoporous titania beads of hundreds of micrometers size.

    PubMed

    Wu, Na; Wei, Huanhuan; Zhang, Lizhi

    2012-01-03

    We demonstrated that mesoporous titania beads of uniform size (about 450 μm) and high surface area could be synthesized via an alginate biopolymer template method. These mesoporous titania beads could efficiently remove Cr(VI), Cd(II), Cr(III), Cu(II), and Co(II) ions from simulated wastewater with a facile subsequent solid-liquid separation because of their large sizes. We chose Cr(VI) removal as the case study and found that each gram of these titania beads could remove 6.7 mg of Cr(VI) from simulated wastewater containing 8.0 mg·L(-1) of Cr(VI) at pH = 2.0. The Cr(VI) removal process was found to obey the Langmuir adsorption model and its kinetics followed pseudo-second-order rate equation. The Cr(VI) removal mechanism of titania beads might be attributed to the electrostatic adsorption of Cr(VI) ions in the form of negatively charged HCrO(4)(-) by positively charged TiO(2) beads, accompanying partial reduction of Cr(VI) to Cr(III) by the reductive surface hydroxyl groups on the titania beads. The used titania beads could be recovered with 0.1 mol·L(-1) of NaOH solution. This study provides a promising micro/nanostructured adsorbent with easy solid-liquid separation property for heavy metal ions removal.

  3. Single-crystalline cubic structured InP nanosprings

    NASA Astrophysics Data System (ADS)

    Shen, G. Z.; Bando, Y.; Zhi, C. Y.; Yuan, X. L.; Sekiguchi, T.; Golberg, D.

    2006-06-01

    Cubic structured nanosprings, InP nanosprings, have been synthesized via a simple thermochemical process using InP and ZnS as the source materials. Each InP nanospring is formed by rolling up a single InP nanobelt with the growth direction along the ⟨111⟩ orientation. The formation of these novel nanostructures is mainly attributed to the minimization of the electrostatic energy due to the polar charges on the ±(002) side surfaces of cubic InP. Cathodoluminescence properties were also studied, which reveal that the InP nanosprings have three emission bands centered at ˜736, ˜920, and ˜980nm.

  4. Filar Micrometer

    NASA Astrophysics Data System (ADS)

    Argyle, Bob; Argyle, R. W.

    The measurement of double stars is central to the theme of this book and there are many ways of doing this, but this chapter is dedicated to the use of the filar micrometer which has been used seriously since the time of William Herschel. For a thorough discussion of the history and development of the filar micrometer see the paper by Brooks(1991). Much of our knowledge of longer period visual binaries depends on micrometric measures over the last 200 years. The filar micrometer is by far the most well-known device for measuring double stars. Its design remains largely the same as the original instrument which was first applied to an astronomical telescope by the Englishman William Gascoigne (ca. 1620-1644) in the late 1630s. The aim is to use fine threads located in the focal plane of the telescope lens or mirror to measure the relative position of the fainter component of a double star with respect to the brighter, regarding the latter as fixed for this purpose. This is done by the measurement of the angle which the line joining the two stars makes with the N reference in the eyepiece and the angular separation of the fainter star (B) from the brighter (A) in seconds of arc. These quantities are usually known as theta ( θ ) and rho ( ρ ) respectively and are defined in Chap. 1 .

  5. InP Materials

    DTIC Science & Technology

    1981-09-30

    profile of the resistance-heated clamshell furnace. The ampoule is fabricated with the large end open, then etched in aqua regia , vacuum baked at - 1000C...NOTES None 19. K EY WORDS (Continue on reverse side if necessary and idenliy by block number) Inp crystal growth InP Synthesis 70. ABSTRACT (Conlinw on

  6. When is an INP not an INP?

    NASA Astrophysics Data System (ADS)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  7. Optical contact micrometer

    DOEpatents

    Jacobson, Steven D.

    2014-08-19

    Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

  8. Traveling digital counters for micrometers

    NASA Technical Reports Server (NTRS)

    Haley, C. T.; Moore, J. M.

    1973-01-01

    Five digit micrometer readings are made directly and quickly with no loss of precision. It is virtually impossible for micrometer to be misread. Digitized micrometer can also be used for reptitive measurements.

  9. The automatic micrometer screw.

    PubMed

    Picker, K M

    2000-03-01

    A new analytical method - the automatic micrometer screw - has been established to measure the edge height of tablets. The equipment offers many advantages compared with other methods. The precision is slightly increased compared to the traditional micrometer screw and the measurement with a small punch and a linear voltage transducer. No longer any touch of the tablet is necessary and influences results. The method works automatically and continuously, no manual measurement of the tablets is necessary. Up to ten tablets can be analyzed at the same time because of a rotary table on which they are positioned. Thus the method is not personal intensive. By combining the results from the measurement of punch displacement which means tablet height in the die and the results of the measurement with the automatic micrometer screw which means tablet height outside the die, a convenient measurement for the decompression process is possible.

  10. Laser interferometer micrometer system

    NASA Technical Reports Server (NTRS)

    Logue, S. H.

    1969-01-01

    Laser micrometer measures dimensions of precision gyro and gas bearing parts using the principle of measuring light phase changes rather than a direct fringe count. The system uses light beams to eliminate errors due to deformations and surface irregularities, and three interferometers.

  11. InP Materials.

    DTIC Science & Technology

    1982-09-30

    SUMMARY REPORT TO THE ROME AIR DEVELOPMENT CENTER 1 OC1OBER 191 -30 SEPrEMBER 1382 ISSUED 12 JANUARY 19 DTIC S ELECTE MAR ? 1983 j, B__ Approved for...ratio is less than 0.4 for all but 4 of the 44 samples. Of the 23 samples with 077 > 5 x 104 cm2V-1s-1 , only 3 are compensated more than 20%, whereas...for any of the standard boul es. 23 TABLE 4 Electrical properties of InP boules grown from same charge material Boule Sample Melt composition n3OO

  12. Automatic readout micrometer

    DOEpatents

    Lauritzen, Ted

    1982-01-01

    A measuring system is disclosed for surveying and very accurately positioning objects with respect to a reference line. A principal use of this surveying system is for accurately aligning the electromagnets which direct a particle beam emitted from a particle accelerator. Prior art surveying systems require highly skilled surveyors. Prior art systems include, for example, optical surveying systems which are susceptible to operator reading errors, and celestial navigation-type surveying systems, with their inherent complexities. The present invention provides an automatic readout micrometer which can very accurately measure distances. The invention has a simplicity of operation which practically eliminates the possibilities of operator optical reading error, owning to the elimination of traditional optical alignments for making measurements. The invention has an extendable arm which carries a laser surveying target. The extendable arm can be continuously positioned over its entire length of travel by either a coarse or fine adjustment without having the fine adjustment outrun the coarse adjustment until a reference laser beam is centered on the target as indicated by a digital readout. The length of the micrometer can then be accurately and automatically read by a computer and compared with a standardized set of alignment measurements. Due to its construction, the micrometer eliminates any errors due to temperature changes when the system is operated within a standard operating temperature range.

  13. Automatic readout micrometer

    DOEpatents

    Lauritzen, T.

    A measuring system is described for surveying and very accurately positioning objects with respect to a reference line. A principle use of this surveying system is for accurately aligning the electromagnets which direct a particle beam emitted from a particle accelerator. Prior art surveying systems require highly skilled surveyors. Prior art systems include, for example, optical surveying systems which are susceptible to operator reading errors, and celestial navigation-type surveying systems, with their inherent complexities. The present invention provides an automatic readout micrometer which can very accurately measure distances. The invention has a simplicity of operation which practically eliminates the possibilities of operator optical reading error, owning to the elimination of traditional optical alignments for making measurements. The invention has an extendable arm which carries a laser surveying target. The extendable arm can be continuously positioned over its entire length of travel by either a coarse of fine adjustment without having the fine adjustment outrun the coarse adjustment until a reference laser beam is centered on the target as indicated by a digital readout. The length of the micrometer can then be accurately and automatically read by a computer and compared with a standardized set of alignment measurements. Due to its construction, the micrometer eliminates any errors due to temperature changes when the system is operated within a standard operating temperature range.

  14. Micrometer for Measuring Trepanned Grooves

    NASA Technical Reports Server (NTRS)

    Bird, S. K.

    1983-01-01

    Special micrometer measures diameter of circular groove on face of large part, while part is mounted in lathe chuck. Tool has curved frame so it can reach around obstruction on centerline of part. At one end of frame is blade/ micrometer spindle for reaching into groove to be measured; this type of spindle does not rotate when micrometer thimble is turned in taking measurement. Other end of frame has sliding foot with blade.

  15. CNPq/INPE-LANDSAT system

    NASA Technical Reports Server (NTRS)

    Debarrosaguirre, J. L.

    1985-01-01

    The current status of the Brazilian LANDSAT facilities operated by Instituto de Pesquisas Espaciais (INPE) and the results achieved during the period from October 1, 1984 to August 31, 1985 are presented. INPE's Receiving Station at Cuiaba, MT, operates normally the two tracking and receiving systems it has installed, the old one (1973) for Band S and the new one (February 1983) for dual S- and X-band. Both MSS and TM recording capabilities are functional. Support to the NASA Backup Plan for MSS data also remains active. Routine recordings are being made for LANDSAT-5 only, for both MSS and TM. Originally, MSS was recorded over the full acquisition range. However, since December, 1984, due to further reduction of operational expenses, both instruments are being recorded over Brazilian territory only.

  16. InP materials/cell fabrication

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.

    1987-01-01

    The main points of discussion, conclusions and recommendations of a workshop on InP materials and cell fabrication are given. The importance of assessing the quality of p-Inp crystals supplied by different vendors, back contacts to solar cells, junction formation, energy conversion efficiency, testing for radiation resistance, and future develpments were among the topics discussed.

  17. Airborne astronomy with a 150 micrometer - 500 micrometer heterodyne spectrometer

    NASA Technical Reports Server (NTRS)

    Betz, A. L.

    1991-01-01

    This report summarizes work done under NASA Grant NAG2-254 awarded to the University of California. The project goal was to build a far-infrared heterodyne spectrometer for NASA's Kuiper Airborne Observatory (KAO), and to use this instrument to observe atomic and molecular spectral lines from the interstellar medium. This goal was successfully achieved; the spectrometer is now in routine use aboard the KAO. Detections of particular note have been the 370 micrometers line of neutral atomic carbon, the 158 micrometers transition of ionized carbon, many of the high-J rotational lines of 12CO and 13CO between J=9-8 and J=22-21, the 119 micron ground-state rotational line of OH, and the 219 micron ground-state rotational line of H2D(+). All of these lines were observed at spectral resolutions exceeding 1 part in 10(exp 6), thereby allowing accurate line shapes and Doppler velocities to be measured.

  18. Cathodoluminescence of InP

    NASA Technical Reports Server (NTRS)

    Gatos, C. H.; Vaughan, J. J.; Lagowski, J.; Gatos, H. C.

    1981-01-01

    Cathodoluminescence studies were carried out on p-type InP having carrier concentrations ranging from 7.2 x 10 to the 16th to 7.4 x 10 to the 18th per cu cm in the temperature range of 80-580 K. It was found that low-temperature spectra exhibited peaks at 1.41 and 1.38 eV. These peaks were attributed to band-to-band and band-acceptor transitions, respectively. The dependence of the band-to-band peak on temperature was used to extend knowledge of the temperature dependence of the energy gap of InP to 550 K. It was shown that the half-width of the cathodoluminescence peak can be used for the determination of carrier concentration and carrier-concentration inhomogeneities in the material. The variations of the cathodoluminescence peak height with temperature indicated the possibility of Auger recombination for high carrier concentrations (7.4 x 10 to the 18th per cu cm) at temperatures above 450 K.

  19. Modeling on the size dependent properties of InP quantum dots: a hybrid functional study.

    PubMed

    Cho, Eunseog; Jang, Hyosook; Lee, Junho; Jang, Eunjoo

    2013-05-31

    Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2-4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values.

  20. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    DOE PAGES

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; ...

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formationmore » of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.« less

  1. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    SciTech Connect

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; Cossairt, Brandi M.

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formation of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.

  2. Level Indicator On A Tubular Inside Micrometer

    NASA Technical Reports Server (NTRS)

    Malinzak, R. Michael; Booth, Gary N.

    1995-01-01

    Leveling helps to ensure accurate measurements. Attachment helpful because in some situations that involve measurement of large, tight-tolerance inside dimensions, inside micrometers not held level between contact point give inaccurate readings. User adjusts position and orientation of micrometer and verifies level by observing bubble in level indicator. Upon feeling correct drag between micrometer tips and workpiece, user confident that tool used correctly and accurate measurement obtained.

  3. Radiation effects on p+n InP junctions grown by MOCVD

    NASA Technical Reports Server (NTRS)

    Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

    1994-01-01

    The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

  4. Surface chemistry of InP quantum dots: a comprehensive study.

    PubMed

    Cros-Gagneux, Arnaud; Delpech, Fabien; Nayral, Céline; Cornejo, Alfonso; Coppel, Yannick; Chaudret, Bruno

    2010-12-29

    Advanced (1)H, (13)C, and (31)P solution and solid-state NMR studies combined with IR spectroscopy were used to probe, at the molecular scale, the composition and the surface chemistry of indium phosphide (InP) quantum dots (QDs) prepared via a non-coordinating solvent strategy. This nanomaterial can be described as a core-multishell object: an InP core, with a zinc blende bulk structure, is surrounded first by a partially oxidized surface shell, which is itself surrounded by an organic coating. This organic passivating layer is composed, in the first coordination sphere, of tightly bound palmitate ligands which display two different bonding modes. A second coordination sphere includes an unexpected dialkyl ketone and residual long-chain non-coordinating solvents (ODE and its isomers) which interact through weak intermolecular bonds with the alkyl chains of the carboxylate ligands. We show that this ketone is formed during the synthesis process via a decarboxylative coupling route and provides oxidative conditions which are responsible for the oxidation of the InP core surface. This phenomenon has a significant impact on the photoluminescence properties of the as-synthesized QDs and probably accounts for the failure of further growth of the InP core.

  5. Synthesis and characterization of InP and InN colloidal quantum dots.

    SciTech Connect

    Boyle, Timothy J.; Osinski, Marek; Greenberg, Melisa; Bunge, Scott D.; Chen, Weiliang; Smolyakov, G. A.; Pulford, B. N.; Jiang, Ying-Bing

    2005-04-01

    InP quantum dots (QDs) with zinc blende structure and InN QDs with hexagonal structure were synthesized from appropriate organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The QDs were characterized by TEM, the associated energy dispersive spectroscopy (EDS), electron diffraction, and steady state UV-VIS optical absorption and photoluminescence spectroscopy. To our best knowledge, this paper reports synthesis of InN colloidal quantum dots for the first time.

  6. Photoluminescence lifetime measurements in InP wafers

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Jenkins, Phillip; Weinberg, Irving

    1991-01-01

    A simple apparatus to measure the minority carrier lifetime in InP has been developed. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material is examined. The results also show a marked difference in the lifetime of n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.

  7. Photon counting micrometer and video CCD.

    NASA Astrophysics Data System (ADS)

    Tie, Qiongxian; Li, Chennfei

    The structure and observational method of the photon counting slotted micrometer are proposed. The micrometer is made up of a piece of slotted plate and a photomultiplier. The photon counting micrometer is replaced by a video CCD for regular trial observation and as a test for the equipment of one scientific CCD, because the micrometer transmission in the instrumental vertical angle transmission mechanism is dull, and the telescope is not able to observe regularly since the optical axis changes greatly as the telescope points to different vertical distance. The video CCD is fixed in the course of observation, recording a picture every forty milliseconds, or one hundred pictures within four seconds, resulting in simultaneously after smoothing treatment the moment and stellar zenith distance when a star passes through the meridian or prime vertical.

  8. Synthesis and characterization of micrometer Cu/PVP architectures

    SciTech Connect

    Luo, Huajuan; Zhao, Yanbao; Sun, Lei

    2011-08-15

    Graphical abstract: A simple method for the synthesis of novel micrometer flower-like Cu/PVP architectures was introduced. Highlights: {yields} Micrometer flower-like copper/polyvinylpyrrolidone architectures were obtained by a simple chemical route. {yields} The amount of N{sub 2}H{sub 4}{center_dot}H{sub 2}O, the reaction temperature, the molar ratio of CuCl{sub 2} to PVP and different molecular weights of PVP play an important role in the controlling the morphology of the Cu/PVP architectures. {yields} A possible mechanism of the formation of Cu/PVP architectures was discussed. -- Abstract: Micrometer-sized flower-like Cu/polyvinylpyrrolidone (PVP) architectures are synthesized by the reduction of copper (II) salt with hydrazine hydrate in aqueous solution in the presence of PVP capping agent. The resulting Cu/PVP architectures are investigated by UV-vis spectroscopy, transmission electron microscopy (TEM), X-ray powder diffraction (XRD), and scanning electron microscopy (SEM). The Cu/PVP flowers have uniform morphologies with an average diameter of 10 {mu}m, made of several intercrossing plates. The formation of Cu/PVP flowers is a new kinetic control process, and the factors such as the amount of N{sub 2}H{sub 4}{center_dot}H{sub 2}O, reaction temperature, molar ratio of CuCl{sub 2} to PVP and molecular weight of PVP have significant effect on the morphology of Cu/PVP architectures. A possible mechanism of the formation of micrometer Cu/PVP architectures was discussed.

  9. Annealing ambient controlled deep defect formation in InP

    NASA Astrophysics Data System (ADS)

    Zhao, Y. W.; Dong, Z. Y.; Duan, M. L.; Sun, W. R.; Zeng, Y. P.; Sun, N. F.; Sun, T. N.

    2004-07-01

    Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while InP annealed in iron phosphide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

  10. Basic Problems in InP Technology.

    DTIC Science & Technology

    1981-03-01

    mass spectrometry (SIMS) analysis .... ............. 20 6 Auger electron spectrum obtained from a chemically etched InP sample showing the formation...deposited on pyrolytically carbon film .... .............. 38 PZ5 4 " -- - - __-- FIGURE PAGE 15 SEN photograph of a sample annealed with 39 Si3N 4...epitaxially grown by a 2 variety of techniques such as liquid-phase epitaxy (LPE), vapor phase epitaxy (VPE),3 metal organic chemical vapor deposition

  11. Electrochemical characterization of InP structures

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Vargas-Aburto, Carlos; Wilt, David M.; Goradia, Manju

    1992-01-01

    Electrochemical (EC) techniques represent a simple and yet accurate method to characterize InP and related materials structures. With EC techniques, uncertainties in the measurements arising from factors such as surface effects, the composition and thickness of a front dead layer, the contacts, etc., can be significantly reduced when both a suitable electrolyte is used and the measuring conditions are carefully selected. In this work, the use of photoelectrochemical techniques with InP structures is reported. The work focuses on both the characterization and the optimization of structures grown by thermal diffusion and by epitaxial methods. Characterization of the structures is done by studying the variation in the density of surface states, number of defects, and net majority carrier concentration as a function of material removed. A step-by-step optimization process of n(sup +)p and p(sup+)n InP structures is also described. This involves the passivation and subsequent removal of damaged layers in order to extract the performance parameters of solar cells fabricated with these structures.

  12. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap, component. Concentrator cells include the three terminal multibandgap cell and an n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n+p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  13. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap component. Concentrator cells include the three terminal multibandgap cell and n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n + p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  14. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap, component. Concentrator cells include the three terminal multibandgap cell and an n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n+p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  15. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    PubMed

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  16. Three-Stage InP Submillimeter-Wave MMIC Amplifier

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

    2008-01-01

    A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

  17. High performance photodetectors based on high quality InP nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Yan-Kun; Yang, Tie-Feng; Li, Hong-Lai; Qi, Zhao-Yang; Chen, Xin-Liang; Wu, Wen-Qiang; Hu, Xue-Lu; He, Peng-Bin; Jiang, Ying; Hu, Wei; Zhang, Qing-Lin; Zhuang, Xiu-Juan; Zhu, Xiao-Li; Pan, An-Lian

    2016-11-01

    In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

  18. Peptides for functionalization of InP semiconductors.

    PubMed

    Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

    2009-09-15

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  19. Terahertz emission from InP

    SciTech Connect

    Hargreaves, S.; Lewis, R. A.

    2010-01-04

    We investigate the generation of THz radiation by the application of ultra-short near-infrared optical pulses to bulk unbiased InP. The THz radiation is detected in the direction of the specular reflection. While the overall emission characteristics are similar to those displayed by InAs under similar excitation conditions, in contrast to InAs, a single-cycle only variation in THz signal, of about +-20%, is observed as the sample is rotated through 360 deg. around the surface normal.

  20. Reading a Micrometer. Fordson Bilingual Demonstration Project.

    ERIC Educational Resources Information Center

    Field, Susan; And Others

    This vocational instructional module on reading a micrometer is one of eight such modules designed to assist recently arrived Arab students, limited in English proficiency (LEP), in critical instructional areas in a comprehensive high school. Goal stated for this module is for the student to demonstrate ability to measure using a one-inch…

  1. Improvements in InP solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, Christopher; Vernon, Stanley M.; Haven, Victor E.

    1988-01-01

    Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

  2. Wideband 1.064 micrometer detector evaluation

    NASA Technical Reports Server (NTRS)

    Green, S. I.

    1975-01-01

    The performance of several candidate detectors for use as communications detectors in a 400 Mbps 1.064 micrometers laser communication system was evaluated. The results of communication system Bit Error Rate (BER) testing for the best detector of each type are summarized. Complete testing data of each type detector is presented. The 400 Mbps 1.064 micrometers communication system receiver test bed is described. The best communication system results for each detector type are included. Performance comparisons are made at 0.000001 BER, the specification level chosen for satellite laser communication links. The data is presented in two groups. The first indicates the best performance levels that can be expected on normal space laser communication system operation. The second cites the best performance levels which can be achieved by focusing the signal to diffraction limited spots on the photosensitive area.

  3. Sixteen micrometer Infrared Hot Electron Transistor

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Liu, J. K.; Park, J. S.; Lin, T. L.

    1994-01-01

    ABSTRACT. We have demonstrated a bound to continuum state GaAs/Al(x)Ga(1-x)As infrared hot electron transistor which has a peak response at lambda(sub p) = 16.3 micrometers. An excellent photo-current transfer ratio of alpha(sub p) = 0.12 and very low dark current transfer ratio of alpha(sub d) = 7.2 x 10(exp 5) is achieved at a temperature of T = 60 K.

  4. 16 Micrometer Infrared Hot Electron Transistor

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Liu, J. K.; Park, J. S.; Lin, T. L.

    1993-01-01

    We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K.

  5. InP lateral overgrowth technology for silicon photonics

    NASA Astrophysics Data System (ADS)

    Wang, Zhechao; Junesand, Carl; Metaferia, Wondwosen; Hu, Chen; Lourdudoss, Sebastian; Wosinski, Lech

    2010-12-01

    Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

  6. Micrometer Instruments, Aviation Quality Control 1: 9225.02.

    ERIC Educational Resources Information Center

    Dade County Public Schools, Miami, FL.

    Second in a series of five, the course consists of the history and principles of the micrometer. The student must have mastered the skills offered in Introduction to Measurement and the Use of Scaled Instruments--9225.01. Techniques in reading and using the micrometer, checking, adjusting, and calibrating the micrometer are topics covered.…

  7. Progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, David J.

    1988-01-01

    Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

  8. Progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.

    1988-01-01

    Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/P homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

  9. Donor Behavior in High-Purity Epitaxial InP.

    DTIC Science & Technology

    1980-10-02

    Thermodynamic Analysis of L InP and GaAs Deposition", Journal of Phyjsica Chemical Solids 36, 111, (1975). 17. 0. Levenspiel , "Chemical Reaction Engineering",r John Wiley and Sons, NY, NY, (1972).

  10. Preferentially Etched Epitaxial Liftoff of InP Material

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); DeAngelo, Frank L. (Inventor)

    1997-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  11. Preferentially etched epitaxial liftoff of InP material

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); Deangelo, Frank L. (Inventor)

    1995-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  12. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    NASA Technical Reports Server (NTRS)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  13. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    NASA Technical Reports Server (NTRS)

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  14. InP tunable ring resonator filters

    NASA Astrophysics Data System (ADS)

    Tauke-Pedretti, A.; Vawter, G. A.; Skogen, E. J.; Peake, G.; Overberg, M.; Alford, C.; Torres, D.; Cajas, F.

    2013-03-01

    Optical channelizing filters with narrow linewidth are of interest for optical processing of microwave signals. Fabrication tolerances make it difficult to place exactly the optical resonance frequency within the microwave spectrum as is required for many applications. Therefore, efficient tuning of the filter resonance is essential. In this paper we present a tunable ring resonator filter with an integrated semiconductor optical amplifier (SOA) fabricated on an InP based photonic integrated circuit (PIC) platform. The ring resonance is tuned over 37 GHz with just 0.2 mA of current injection into a passive phase section. The use of current injection is often more efficient than thermal tuning using heaters making them useful for low-power applications. The single active ring resonator has an electrical FWHM of 1.5 GHz and shows greater than 16 dB of extinction between on and off resonance. The effects of SOA internal ring gain and induced passive loss on extinction and linewidth will be shown. Agreement between experimentally demonstrated devices and simulations are shown. The integration of the active and passive regions is done using quantum well intermixing and the resonators utilize buried heterostructure waveguides. The fabrication process of these filters is compatible with the monolithic integration of DBR lasers and high speed modulators enabling single chip highly functional PICs for the channelizing of RF signals.

  15. Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates

    NASA Astrophysics Data System (ADS)

    Almuneau, Guilhem; Hall, Eric M.; Nakagawa, Shigeru; Kim, Jin K.; Coldren, Larry A.

    2000-05-01

    The characterization of 1.55 micrometer room temperature (RT) electrically pumped monolithic vertical cavity surface emitting lasers (VCSELs) on InP is reported. By combining high refractive index-contrast AlGaAsSb/AlAsSb distributed Bragg mirrors (DBRs) and Esaki-junction-based active region, these results demonstrate that VCSELs operating at 1.55 micrometer and employing a reasonable number of mirror periods can be grown in a single epitaxial step. Regarding our first results with the same type of structure, some improvements have been achieved on the threshold current density (approximately equals 1 kA/cm2), and on the voltage drop in the DBRs. We also present in this paper the thermal conductivity of the As- Sb materials measured on both bulk layers and DBR stacks. The main performance-limiting factor appears to be the combination between the low thermal conduction of the quaternary alloys lattice-matched to InP, and the high energy-band offset between the high- and the low-index materials.

  16. High-efficiency heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Wanlass, M. W.; Coutts, T. J.; Ward, J. S.; Emery, K. A.

    1991-01-01

    High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet

  17. Copper-micrometer-sized diamond nanostructured composites

    NASA Astrophysics Data System (ADS)

    Nunes, D.; Livramento, V.; Shohoji, N.; Fernandes, H.; Silva, C.; Correia, J. B.; Carvalho, P. A.

    2011-12-01

    Reinforcement of a copper matrix with diamond enables tailoring the properties demanded for thermal management applications at high temperature, such as the ones required for heat sink materials in low activated nuclear fusion reactors. For an optimum compromise between thermal conductivity and mechanical properties, a novel approach based on multiscale diamond dispersions is proposed: a Cu-nanodiamond composite produced by milling is used as a nanostructured matrix for further dispersion of micrometer-sized diamond (μDiamond). A series of Cu-nanodiamond mixtures have been milled to establish a suitable nanodiamond fraction. A refined matrix with homogeneously dispersed nanoparticles was obtained with 4 at.% μDiamond for posterior mixture with microdiamond and subsequent consolidation. Preliminary consolidation by hot extrusion of a mixture of pure copper and μDiamond has been carried out to define optimal processing parameters. The materials produced were characterized by x-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

  18. Summary of Workshop on InP: Status and Prospects

    NASA Technical Reports Server (NTRS)

    Walters, R. J.; Weinberg, I.

    1994-01-01

    The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

  19. Long-Term INP Measurements within the BACCHUS project

    NASA Astrophysics Data System (ADS)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  20. Atoms.inp Archive: Crystallographic Data from GSECARS

    DOE Data Explorer

    Newville, Matthew

    The Atoms.inp Archive is a collection of crystallographic data for use in XAFS analysis. The crystallographic data is stored as atoms.inp files, which contain all the information necessary to describe the crystal, and can be used by the program ATOMS to generate feff.inp files. These files can then be used by the FEFF program [See http://leonardo.phys.washington.edu/feff/] to calculate a theoretical XAFS spectrum for the crystal. This archive exists because it can take a considerable amount of time to locate a suitable reference for a model structure to use for making theoretical XAFS standards. Even then, references sometimes give non-standard or incomplete crystallographic notation that ATOMS has difficulty interpreting. All of this means that getting a reliable atoms.inp file can take quite a bit of effort. It is hoped that this collection of well-documented and well-tested atoms.inp files will eliminate much of the work in creating theoretical XAFS standards from FEFF. [Taken from http://cars9.uchicago.edu/~newville/adb/]. The collection currently has more than 200 crystal structures, 2748 data files, and it continues to expand. The collection is related to the UWXAFS Project [http://depts.washington.edu/uwxafs/] and to the work of the Consortium for Advanced Radiation Sources (CARS). After searching the Archive, a user may also choose to run the web version of ATOMS software.

  1. Micrometer glass nozzles for flow focusing

    NASA Astrophysics Data System (ADS)

    Montanero, J. M.; Gañán-Calvo, A. M.; Acero, A. J.; Vega, E. J.

    2010-07-01

    We discuss the use of flame-shaped glass micro-nozzles for ultra-fine liquid atomization by flow focusing (DePonte et al 2008 J. Phys. D: Appl. Phys. 41 195505), which may have great importance in very varied technological fields, such as biotechnology, biomedicine and analytical chemistry. Some advantages offered by these nozzles over the original plate orifice configuration (Gañán-Calvo 1998 Phys. Rev. Lett. 80 285) are: (i) they are extraordinarily smooth even at the micrometer scale, (ii) one can readily obtain nozzles with neck diameters in the range of a few tens of microns, (iii) they demand gas flow rates significantly smaller than those required by the plate orifice configuration and (iv) they are transparent. However, highly demanding applications require a precise characterization of their three-dimensional shape by non-destructive means. This characterization cannot be obtained straightforwardly from optical transmission or electron microscopy mainly due to optical distortion. We propose in this paper a method for measuring the shape and size of micrometer nozzles formed inside millimetric and submillimetric capillaries made of transparent materials. The inside of the capillary is colored, and the capillary is put in a liquid bath with almost the same refractive index as that of the capillary to eliminate optical distortion. The nozzle image, acquired with a microscope using back-light illumination to get a silhouette effect, is processed to locate the contours of the nozzle with sub-pixel resolution. To determine the three-dimensional shape of the nozzle, the capillary is rotated in front of the camera. The method provides precise results for nozzle sizes down to a few microns.

  2. Electron guns and collectors developed at INP for electron cooling devices

    SciTech Connect

    Sharapa, A.N.; Shemyakin, A.V.

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  3. [The influential factors of MOCVD growth of InP in opals].

    PubMed

    Tan, Chun-hua; Fan, Guang-han; Huang, Xu-guang

    2008-12-01

    The key problem of fabricating the 3-D InP inverse opal photonic crystal is to increase the loading of InP in opals. In the present paper, low-pressure metal-organic chemical-vapour deposition (MOCVD) was used to infill the voids within synthetic opals with InP. The morphologies and optical properties of SiO2-InP photonic crystal were characterized by scanning electron microscopy and ultraviolet-visible spectrophotometry (UV-Vis). Several series of experiments were carried out in order to analyze the factors that influence the loading of InP in opals and determine the optimal InP growth conditions. The results of optical experiments are in good agreement with those derived from the theoretical considerations: By increasing the extent of InP infilling within the voids, the extent of refractive index contrast between the silica spheres and the void as well as the extent of natural optical properties change of the photonic crystal were increased. Cycle growth, low-pressure growth, and using the match substrate and the same configuration character between SiOi and InP are beneficial to increaseing the extent of InP infilling within the opal voids. The process has been optimized to achieve SiO2-InP photonic crystal with higher loading of InP. The study provides a scientific basis for manufacturing three-dimensional InP inverse opal photonic crystals.

  4. Radiation effects in heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

    1993-01-01

    Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

  5. Nanophotonic resonators for InP solar cells.

    PubMed

    Goldman, Daniel A; Murray, Joseph; Munday, Jeremy N

    2016-05-16

    We describe high efficiency thin-film InP solar cells that utilize a periodic array of TiO2 nanocylinders. These nanophotonic resonators are found to reduce the solar-weighted average reflectivity of an InP solar cell to ~1.3%, outperforming the best double-layer antireflection coatings. The coupling between Mie scattering resonances and thin-film interference effects accurately describes the optical enhancement provided by the nanocylinders. The spectrally resolved reflectivity and J-V characteristics of the device under AM1.5G illumination are determined via coupled optical and electrical simulations, resulting in a predicted power conversion efficiency > 23%. We conclude that the nanostructured coating reduces reflection without negatively affecting the electronic properties of the InP solar cell by separating the nanostructured optical components from the active layer of the device.

  6. High Efficiency InP Solar Cells Through Nanostructuring

    NASA Astrophysics Data System (ADS)

    Goldman, Daniel; Murray, Joseph; Munday, Jeremy

    We describe high efficiency InP solar cells which utilize a periodic array of optically designed TiO2 nanocylinders. Optical and electronic simulations were performed to determine the spectrally resolved reflectivity and I-V characteristics of potential devices under AM1.5G illumination. The reflectivity of InP solar cells with these nanocylinders is found to have an average value of 2% over the visible and near-IR spectral range, which outperforms traditional antireflection coatings. Coupling between Mie scattering resonances and thin film interference effects is found to accurately describe the optical enhancement provided by the nanocylinders. These nanostructured solar cells have power conversion efficiencies greater than 23%, which is comparable to the highest quoted efficiencies for InP solar cells.

  7. Absorption enhancement by textured InP in solar cells

    NASA Astrophysics Data System (ADS)

    Yun, Seokhun; Ji, Taeksoo

    2016-03-01

    III-V compound semiconductors seem to be the ideal materials for photovoltaic devices because they exhibit fast carrier velocity. III-V compound semiconductors, however, are unfavorable materials to be commercialized on large scale photovoltaic devices because of their high material cost. The textured surface shows the potential to increase the performance of solar cells because of the properties such as high absorption and longer light path length. These properties can overcome the disadvantage of the III-V compound semiconductors through thin thickness use when producing solar cells. In this study, we demonstrate that textured surfaces on InP formed by nano-sphere lithography and plasma etching process can enhance the absorption effectively in comparison with planar surface. The power conversion efficiency of InP solar cells using the textured InP and the aluminum doped zinc oxide was achieved up to 8%.

  8. Palladium nanoparticles on InP for hydrogen detection

    PubMed Central

    2011-01-01

    Layers of palladium (Pd) nanoparticles on indium phosphide (InP) were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored. PMID:21711487

  9. Comparative modeling of InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  10. Position-controlled [100] InP nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Plissard, Sébastien; Hocevar, Moïra; Vu, Thuy T. T.; Zehender, Tilman; Immink, George G. W.; Verheijen, Marcel A.; Haverkort, Jos; Bakkers, Erik P. A. M.

    2012-01-01

    We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

  11. Workshop on Heteroepitaxial InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Walters, R. W.

    1993-01-01

    In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

  12. A vertical coupler for InP active components

    NASA Astrophysics Data System (ADS)

    Fan, Guofang; Han, Bing; Li, Yuan; Li, Hongyu; Liu, Ruitong; Zhao, Yongsheng

    2017-10-01

    A discussion about a coupler of a InP active component on a silicon-on-insulator (SOI) wafer is presented for applications in optical interconnects. A model for the design and evaluation of the coupler is developed using a coupling length based a model solver, the model solver is specifically suited for high index contrast waveguides with small area, which show more accurate for compact integrated optical devices. The photonic coupler is fabricated using microelectronics equipment for compatibility towards future generation electronic integrated circuit processing. Measured coupler efficiency is 65% to valid our model. This will be helpful for the design of InP active components.

  13. Better Ohmic Contacts For InP Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

  14. Reading Outside Micrometers. Courseware Evaluation for Vocational and Technical Education.

    ERIC Educational Resources Information Center

    Sommer, Sandra; And Others

    This courseware evaluation rates the Reading Outside Micrometers program developed by EMC Publishing Company. (The program--not contained in this document--uses high resolution graphics to illustrate the micrometer's components, functions, and practical applications.) Part A describes the program in terms of subject area and equipment requirements…

  15. Tapping the potential of trioctylphosphine (TOP) in the realization of highly luminescent blue-emitting colloidal indium phosphide (InP) quantum dots

    NASA Astrophysics Data System (ADS)

    Singh, Akanksha; Chawla, Parul; Jain, Shefali; Sharma, Shailesh Narain

    2017-06-01

    In this work, extremely small blue emitting colloidal InP-based quantum dots (size 2-5 nm) have been synthesized using trioctylphosphine (TOP) as a source of phosphorus. The method reported here is unconventional, quite rapid ( 90 min), more viable, less expensive and relatively greener as compared to other conventional methods that employ tristrimethylsilyylphosphine(P(SiMe3)3) which is scarce, expensive, flammable, highly toxic and even banned in a few countries. Highly luminescent InP QDs having bluish-green emission (λ 490 nm) can be synthesized using this method without resorting to any post-synthesis etching to tune the emission to the blue region. Besides being the source of phosphorus and the particle size regulating agent, the efficacy of TOP is further realized during synthesis via its reduction of indium salt, which aids in the formation of indium metal and then subsequently in the development of InP QDs. The PL intensity of as-synthesized InP QDs is further enhanced by growing a shell of wide band gap material, i.e. ZnS resulting in a concurrent increment in quantum yield from 25% to 38% respectively.

  16. Experiences with digital processing of images at INPE

    NASA Technical Reports Server (NTRS)

    Mascarenhas, N. D. A. (Principal Investigator)

    1984-01-01

    Four different research experiments with digital image processing at INPE will be described: (1) edge detection by hypothesis testing; (2) image interpolation by finite impulse response filters; (3) spatial feature extraction methods in multispectral classification; and (4) translational image registration by sequential tests of hypotheses.

  17. [Study on pollution for the photoelectronic material InP].

    PubMed

    Xu, Jian-cheng; Ding, Xiao-ping; Chen, Ding-qin

    2002-08-01

    The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given. The Hall coefficient, charge carrier concentration and Hall mobility were determined. Experimental results indicate that the pollution of silicon is predominant.

  18. InP solar cell with window layer

    NASA Technical Reports Server (NTRS)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  19. Encapsulated diffusion of sulphur into InP

    NASA Technical Reports Server (NTRS)

    Parat, K. K.; Borrego, J. M.; Ghandhi, S. K.

    1989-01-01

    This talk outlines a simple process for the fabrication of n(+)-p solar cells in indium phosphide. Large area cells (greater than 0.25 sq cm) have been made by this process, with a photovoltaic conversion efficiency of 15.21 percent under AM0 conditions of illumination. An ideality factor of 1.1 and a saturation current density of 8 x 10 to the minus 15th power A/sq cm have been observed for these cells. The technique for cell fabrication involves the diffusion of sulfur into InP by an open tube process, and gives highly reproducible results from run to run. A vacuum-deposited layer of gallium sulphide (Ga2S3) was used as the source for sulfur diffusion, with a chemically vapor deposited SiO2 cap layer to prevent decomposition of the InP surface during heat treatment. Diffusions were carried out in a flowing nitrogen ambient at 585 to 708 C, and characterized by their surface carrier concentration and the diffusion constant. The diffusion profile for sulfur in InP is estimated to be of the complementary error function type. The activation energy of the diffusion was estimated to be 1.94 eV. The technique described here is ideally suited for the fabrication of shallow n(+)-p junctions in InP, and has been used for space-borne solar cells.

  20. c-Myc inhibits TP53INP1 expression via promoter methylation in esophageal carcinoma

    SciTech Connect

    Weng, Wenhao; Yang, Qinyuan; Huang, Miaolong; Qiao, Yongxia; Xie, Yuan; Yu, Yongchun; Jing, An; Li, Zhi

    2011-02-11

    Research highlights: {yields} TP53INP1 expression is down-regulated in esophageal carcinoma and is associated with CGI-131 methylation. {yields} Inhibition of CGI-131 methylation upregulates TP53INP1 expression in ESCC cell lines. {yields} Ectopic expression of TP53INP1 inhibits growth of ESCC cells by inducing apoptosis and inhibiting cell cycle progression. {yields} c-Myc binds to the promoter of TP53INP1 in vivo and vitro and recruits DNMT3A to TP53INP1 promoter for CGI-131 methylation. -- Abstract: Tumor protein p53-induced nuclear protein 1 (TP53INP1) is a well known stress-induced protein that plays a role in both cell cycle arrest and p53-mediated apoptosis. Loss of TP53INP1 expression has been reported in human melanoma, breast carcinoma, and gastric cancer. However, TP53INP1 expression and its regulatory mechanism in esophageal squamous cell carcinoma (ESCC) remain unclear. Our findings are in agreement with previous reports in that the expression of TP53INP1 was downregulated in 28% (10/36 cases) of ESCC lesions, and this was accompanied by significant promoter methylation. Overexpression of TP53INP1 induced G1 cell cycle arrest and increased apoptosis in ESCC cell lines (EC-1, EC-109, EC-9706). Furthermore, our study showed that the oncoprotein c-Myc bound to the core promoter of TP53INP1 and recruited DNA methyltransferase 3A to methylate the local promoter region, leading to the inhibition of TP53INP1 expression. Our findings revealed that TP53INP1 is a tumor suppressor in ESCC and that c-Myc-mediated DNA methylation-associated silencing of TP53INP1 contributed to the pathogenesis of human ESCC.

  1. Synthesizing speech

    NASA Astrophysics Data System (ADS)

    Siltanen, Samuli

    2015-01-01

    Samuli Siltanen explains how solving an "inverse problem" will improve the quality of life of people who can't speak and have to use voice synthesizers - particularly women and children, whose only current option is to sound like an adult male.

  2. Waveform synthesizer

    DOEpatents

    Franks, Larry A.; Nelson, Melvin A.

    1981-01-01

    A method of producing optical and electrical pulses of desired shape. An optical pulse of arbitrary but defined shape illuminates one end of an array of optical fiber waveguides of differing lengths to time differentiate the input pulse. The optical outputs at the other end of the array are combined to form a synthesized pulse of desired shape.

  3. Fabrication of high-efficiency n(+)-p junction InP solar cells by using group VIb element diffusion into p-type InP

    NASA Astrophysics Data System (ADS)

    Yamamoto, A.; Yamaguchi, M.; Uemura, C.

    1985-12-01

    The fabrication of n(+)-p homojunction InP solar cells has been studied using thermal diffusion of S, Se, or Te into p-type InP substrates. Sulphur diffusion using an In2S3 source was found to be effective in forming a shallow and steep n(+)-p function without surface morphology degradation of substrates. A conversion efficiency (active area) of 18 percent, which is the highest efficiency ever reported for InP homojunction solar cells, was obtained by optimizing fabrication conditions for sulphur-diffused cells. An electron irradiation study on fabricated cells has also been made. The InP solar cell was found to have a higher resistance to radiation degradation than Si and GaAs cells. Through these studies, it has been demonstrated that the InP solar cell has excellent potential for space applications.

  4. Surface characterization of InP using photoluminescence

    NASA Technical Reports Server (NTRS)

    Chang, R. R.; Iyer, R.; Lile, D. L.

    1987-01-01

    Photoluminescence (PL) measurements have been performed on InP samples in situ during various surface treatments including chemical etching, wet anodization, and low-pressure chemical vapor deposition. It was found, in agreement with previously published results, that the magnitude of the PL signal varies markedly with surface treatment due presumably to changes in either surface-state density, and/or surface potential. In an attempt to assess the effectiveness of this noninvasive method as a tool for characterizing and monitoring the progressive development of a semiconductor surface during processing, a number of experiments on InP have been performed. The results indicate that although some uncertainty may exist in assigning a mechanism for the PL change in any given experiment, the general trend appears to be that surface degradation results in a reduced signal. As a result, process steps which enhance the PL intensity are likely to be beneficial in the preparation of a high-quality interface.

  5. Defining capabilities of Si and InP photonics.

    SciTech Connect

    Vawter, Gregory Allen

    2010-05-01

    Monolithic photonic integrated circuits (PICs) have a long history reaching back more than 40 years. During that time, and particularly in the past 15 years, the technology has matured and the application space grown to span sophisticated tunable diode lasers, 40 Gb/s electrical-to-optical signal converters with complex data formats, wavelength multiplexors and routers, as well as chemical/biological sensors. Most of this activity has centered in recent years on optical circuits built on either Silicon or InP substrates. This talk will review the three classes of PIC and highlight the unique strengths, and weaknesses, of PICs based on Silicon and InP substrates. Examples will be provided from recent R&D activity.

  6. Surface characterization of InP using photoluminescence

    NASA Technical Reports Server (NTRS)

    Chang, R. R.; Iyer, R.; Lile, D. L.

    1987-01-01

    Photoluminescence (PL) measurements have been performed on InP samples in situ during various surface treatments including chemical etching, wet anodization, and low-pressure chemical vapor deposition. It was found, in agreement with previously published results, that the magnitude of the PL signal varies markedly with surface treatment due presumably to changes in either surface-state density, and/or surface potential. In an attempt to assess the effectiveness of this noninvasive method as a tool for characterizing and monitoring the progressive development of a semiconductor surface during processing, a number of experiments on InP have been performed. The results indicate that although some uncertainty may exist in assigning a mechanism for the PL change in any given experiment, the general trend appears to be that surface degradation results in a reduced signal. As a result, process steps which enhance the PL intensity are likely to be beneficial in the preparation of a high-quality interface.

  7. A single crystalline InP nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  8. Azimuthally polarized cathodoluminescence from InP nanowires

    SciTech Connect

    Brenny, B. J. M.; Osorio, C. I.; Polman, A.; Dam, D. van; Gómez Rivas, J.

    2015-11-16

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  9. Azimuthally polarized cathodoluminescence from InP nanowires

    NASA Astrophysics Data System (ADS)

    Brenny, B. J. M.; van Dam, D.; Osorio, C. I.; Gómez Rivas, J.; Polman, A.

    2015-11-01

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  10. InP Solar Cell Development on Inexpensive Silicon Substrates

    DTIC Science & Technology

    1994-08-16

    P heteroepitaxial cells. For the same emitter thickness, a P/N InP cell has about 100X higher sheet resistance than the N/P cell. In Phase I, Spire...attempted to keep the sheet resistance loss of the new P/N cells approximately the same as the 19% N/P cells with 300 A emitters and gridlines on 700

  11. New directions in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Brinker, D. J.

    1990-01-01

    Recent research efforts representing new directions in InP solar cell research are reviewed. These include heteroepitaxial growth on silicon and gallium arsenide substrates, V-grooved cells, large-area high efficiency cells, and surface passivation. Improvements in heteroepitaxial cell efficiency are described together with processing of 19.1 percent, 4 sq cm cells. Recommendations are made for improvements in processing leading to increased efficiencies.

  12. New directions in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Brinker, D. J.

    1990-01-01

    Recent research efforts representing new directions in InP solar cell research are reviewed. These include heteroepitaxial growth on silicon and gallium arsenide substrates, V-grooved cells, large area high efficiency cells, and surface passivation. Improvements in heteroepitaxial cell efficiency are described together with processing of 19.1 percent, 4 sq cm cells. Recommendations are made for improvements in processing leading to increased efficiencies.

  13. Comparison of 8 to 12 Micrometer and 3 to 5 Micrometer CVF Transmissometer Data with LOWTRAN Calculations.

    DTIC Science & Technology

    1984-06-26

    STANDARS -963-A " .:- A 9 ..A . . . . . . ". . _’.". ". . . - - ’. - . . - . - . - " ,, . - . , .,,-’ . . - . ,.X...Micrometer and 3 to 5 Micrometer CVF Transmissometer Data With LOWTRAN Calculations F. X. KNEIZYS W. 0. GALLERY R. R. GRUENZEL S. A. CLOUGH W. C. MARTIN J. H...Facility, Wright-Patterson Air Force Base, Ohio with a circular variable filter ((’VI) transmissometer. The data cover the spectral regions from 8- to

  14. Fabrication of ordered arrays of InP microstructures by wet chemical etching with Au masks.

    PubMed

    Su, G; Guo, Q; Palmer, R E

    2002-12-01

    Ordered arrays of InP microstructures have been fabricated on InP(001) substrates by wet chemical etching in aqueous HCl with patterned Au masks. The masks were produced by Au deposition through copper grids or a monolayer of polystyrene microspheres. Square InP mesas (20 x 20 microns) and pillars (approximately 100 nm in both diameter and height) were both produced and characterized by scanning electron microscopy and atomic force microscopy.

  15. Surface accumulation of hydrogen during capless annealing of InP

    SciTech Connect

    Haussler, W.

    1989-06-19

    InP samples, which had received a capless anneal in a phosphine/hydrogenatmosphere, were examined for hydrogen contamination by secondary-ion massspectrometry. It is found that hydrogen accumulates at the InP surface duringannealing. Annealing of Be-implanted InP leads to similar profile shapes for theBe and H atoms. Passivation of the Be acceptors, if effective at all, appears tobe of only minor significance.

  16. Ruthenium: A superior compensator of InP

    NASA Astrophysics Data System (ADS)

    Dadgar, A.; Stenzel, O.; Näser, A.; Zafar Iqbal, M.; Bimberg, D.; Schumann, H.

    1998-12-01

    The 4d-transition metal ruthenium presents a new dopant to fabricate thermally stable semi-insulating InP layers for both electron and hole injection. The layers are grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium as source materials for InP growth. Using bis(η5-2,4-dimethyl-pentadienyl)ruthenium(II) as precursor Ru doping concentrations of the order of 4×1018cm-3 are achieved, determined by means of secondary ion mass spectroscopy. The Ru diffusion coefficient in InP is determined to DRu(800 °C)⩽1×10-15 cm2/s which is four orders of magnitude smaller than for Fe. Resistivities obtained under electron and hole injection are above 6×107Ω cm and 5×108 Ω cm, respectively. In deep level transient spectroscopy measurements under electron emission and hole emission, one deep level each with concentrations around 1016 cm-3, is observed.

  17. Electrical properties of oxygen ion-implanted InP

    NASA Astrophysics Data System (ADS)

    He, L.; Anderson, W. A.

    1992-10-01

    The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP ( n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.

  18. Diameter Dependence of Planar Defects in InP Nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, Senpo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-09-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications.

  19. Diameter Dependence of Planar Defects in InP Nanowires

    PubMed Central

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-01-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications. PMID:27616584

  20. Influence of doping in InP buffer on photoluminescence behavior of InPBi

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Pan, Wenwu; Cao, Chunfang; Wu, Xiaoyan; Wang, Shumin; Gong, Qian

    2016-11-01

    InP1- x Bi x epilayers with 1.0% bismuth concentration were grown on InP(001) substrates by gas-source molecular beam epitaxy. Silicon and beryllium were doped into the InP buffer layer, and their influences on the photoluminescence (PL) emission of InPBi were investigated. The PL emission of InPBi was found to be intensified by beryllium doping into the InP buffer layer. However, there was no influence of silicon doping. To investigate the reason for the PL intensity enhancement of InPBi, the carrier transport behavior at the interface was also discussed.

  1. Origin of deep level defect related photoluminescence in annealed InP

    NASA Astrophysics Data System (ADS)

    Zhao, Youwen; Dong, Zhiyuan; Miao, Shanshan; Deng, Aihong; Yang, Jun; Wang, Bo

    2006-12-01

    Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3eV has been observed in the InP sample annealed in iron phosphide ambient. Both the 1.3eV PL emission and a defect at EC-0.18eV correlate with a divacancy detected in the annealed InP sample. The results make a divacancy defect and related property identified in the annealed InP.

  2. Inp1p is a peroxisomal membrane protein required for peroxisome inheritance in Saccharomyces cerevisiae.

    PubMed

    Fagarasanu, Monica; Fagarasanu, Andrei; Tam, Yuen Yi C; Aitchison, John D; Rachubinski, Richard A

    2005-06-06

    Cells have evolved molecular mechanisms for the efficient transmission of organelles during cell division. Little is known about how peroxisomes are inherited. Inp1p is a peripheral membrane protein of peroxisomes of Saccharomyces cerevisiae that affects both the morphology of peroxisomes and their partitioning during cell division. In vivo 4-dimensional video microscopy showed an inability of mother cells to retain a subset of peroxisomes in dividing cells lacking the INP1 gene, whereas cells overexpressing INP1 exhibited immobilized peroxisomes that failed to be partitioned to the bud. Overproduced Inp1p localized to both peroxisomes and the cell cortex, supporting an interaction of Inp1p with specific structures lining the cell periphery. The levels of Inp1p vary with the cell cycle. Inp1p binds Pex25p, Pex30p, and Vps1p, which have been implicated in controlling peroxisome division. Our findings are consistent with Inp1p acting as a factor that retains peroxisomes in cells and controls peroxisome division. Inp1p is the first peroxisomal protein directly implicated in peroxisome inheritance.

  3. Synthesizing Chaos

    NASA Astrophysics Data System (ADS)

    Blakely, Jonathan; Corron, Ned; Hayes, Scott; Pethel, Shawn

    2007-03-01

    Chaos is usually attributed only to nonlinear systems. Yet it was recently shown that chaotic waveforms can be synthesized by linear superposition of randomly polarized basis functions. The basis function contains a growing oscillation that terminates in a large pulse. We show that this function is easily realized when viewed backward in time as a pulse followed by ringing decay. Consequently, a linear filter driven by random pulses outputs a waveform that, when viewed backward in time, exhibits essential qualities of chaos, i.e. determinism and a positive Lyapunov exponent. This phenomenon suggests that chaos may be connected to physical theories whose framework is not that of a deterministic dynamical system. We demonstrate that synthesizing chaos requires a balance between the topological entropy of the random source and the dissipation in the filter. Surprisingly, using different encodings of the random source, the same filter can produce both Lorenz-like and R"ossler-like waveforms. The different encodings can be viewed as grammar restrictions on a more general encoding that produces a chaotic superset encompassing the Lorenz and R"ossler paradigms of nonlinear dynamics. Thus, the language of deterministic chaos provides a useful description for a class of signals not generated by a deterministic system.

  4. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells.

    PubMed

    Sándor, Nikolett; Schilling-Tóth, Boglárka; Kis, Enikő; Fodor, Lili; Mucsányi, Fruzsina; Sáfrány, Géza; Hegyesi, Hargita

    2015-10-23

    Tumor protein 53-induced nuclear protein-1 (TP53inp1) is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT) cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP) cells was compared to cells transfected with non-targeting (NT) shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B) immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR) induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  5. High sensitivity infrared 10.6 micrometer heterodyne receiver development

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The results are presented for a study on the design of an infrared 10.6-micrometer quantum-noise-limited optical receiver subsystem. Performance measurements of the HgCdTe photomixer preamplifier combination were carried out for photomixer temperatures up to 152 K and a photomixer frequency response of up to 420 MHz was obtained. Results of temperature and bias cycling of HgCdTe photomixers are reported. Design considerations for an operational 10.6 micrometer heterodyne receiver are presented. These consist of design data on required laser LO illumination, heat load levels for photomixer cooler, photomixer uniformity and the effects of photomixer impedance match on receiver sensitivity. Analysis and measurements of 10.6 micrometer heterodyne detection in an extrinsic photoconductive (p-type) HgCdTe photomixer are also presented.

  6. 0.4-3.5-micrometer Observations of 4179 Toutatis

    NASA Astrophysics Data System (ADS)

    Howell, E. S.; Britt, D. T.; Bell, J. F.; Binzel, R. P.; Lebofsky, L. A.

    1993-07-01

    We obtained nearly simultaneous observations of 4179 Toutatis over a 0.3-3.5 micrometer wavelength range on 4 January 1993 UT. Howell obtained a 1.2-2.5 micrometer spectrophotometry using the Multiple Mirror Telescope in Arizona. Britt and Bell obtained narrowband photometry in the 3-micrometer region as well as broadband JHK photometry from the Infrared Telescope Facility in Hawaii. Binzel measured the visible spectrum using a CCD spectrograph at the McGraw-Hill Observatory in Arizona. Using V photometry reported by Pravec in the Czech Republic on adjacent nights [1], we were able to combine all these spectral regions. The rotation period of this object is approximately 10 days, so the time differences between the measurements of different spectral regions are negligible. Tholen has classified 4179 Toutatis as an S-type asteroid based on visible photometry. We measure a pyroxene absorption band near 2 micrometers, present in most S-type asteroid spectra. Unfortunately, a gap in spectral coverage prevents us from determining the characteristics of the 1-micrometer absorption band accurately. The spectral slope as measured from 1.25 to 2.2 micrometers is 6-10%, which is modest compared to other S-type asteroids. The spectrum of this asteroid is similar to other near-Earth S-type asteroids that have been observed in the near-infrared wavelength region. On 4 January 1993, 4179 Toutatis was 0.182 AU from the Earth, and 1.158 AU from the Sun. At this solar distance, the thermal emission contributes substantially to the flux at 3 micrometers. The determination of thermal emission is complicated by the slow rotation rate and the irregular shape of this object that was revealed by radar observations [2]. Preliminary results suggest that no 3-micrometer absorption feature is present, indicating that this object is anhydrous. Using these spectral data, we will compare 4179 Toutatis to other S-type asteroids, both in the main belt and the near-Earth environment. References

  7. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    NASA Technical Reports Server (NTRS)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  8. Near-optimum design of the InP homojunction solar cell

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Geier, James V.; Weinberg, Irving

    1987-01-01

    Using a fairly comprehensive model, researchers have done a parametric variation study of the InP n+p homojunction solar cell for AMO, 25 C operation. The results of this study are presented. These results indicate that an efficiency of about 25 percent should be realistically possible in a shallow homojunction InP solar cell with near-optimum design.

  9. Optical processing using photorefractive GaAs and InP

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Luke, Keung L.

    1991-01-01

    The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

  10. Optical processing using photorefractive GaAs and InP

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Luke, Keung L.

    1991-01-01

    The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

  11. Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

    NASA Astrophysics Data System (ADS)

    Chertouk, Mourad; Boudiaf, A.; Azoulay, Rozette; Clei, A.

    1993-11-01

    The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 1017 cm-3 and 1018 cm-3 channel doping. The excess gate-drain assisted tunneling current in 1018 cm-3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased.

  12. Electrochemical characterization of p(+)n and n(+)p diffused InP structures

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Faur, Maria; Faur, Mircea; Goradia, M.; Vargas-Aburto, Carlos

    1993-01-01

    The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.

  13. Gate tunable monolayer MoS2/InP heterostructure solar cells

    NASA Astrophysics Data System (ADS)

    Lin, Shisheng; Wang, Peng; Li, Xiaoqiang; Wu, Zhiqian; Xu, Zhijuan; Zhang, Shengjiao; Xu, Wenli

    2015-10-01

    We demonstrate monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS2, we have designed the gate tunable MoS2/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS2 is effectively tuned, and the barrier height at the MoS2/InP heterojunction correspondingly changes. The power conversion efficiency of MoS2/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS2/InP heterostructure may be promising for highly efficient solar cells.

  14. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

    SciTech Connect

    Lin, Shisheng Wang, Peng; Li, Xiaoqiang; Wu, Zhiqian; Xu, Zhijuan; Zhang, Shengjiao; Xu, Wenli

    2015-10-12

    We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.

  15. 2 Micrometers InAsSb Quantum-dot Lasers

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Uhl, David; Keo, Sam

    2004-01-01

    InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

  16. High-Energy 2-Micrometers Doppler Lidar for Wind Measurements

    NASA Technical Reports Server (NTRS)

    Koch, Grady J.; Beyon, Jeffrey Y.; Barnes, Bruce W.; Petros, Mulugeta; Yu, Jirong; Amzajerdian, Farzin; Kavaya, Michael J.; Singh, Upendra N.

    2006-01-01

    High-energy 2-micrometer wavelength lasers have been incorporated in a prototype coherent Doppler lidar to test component technologies and explore applications for remote sensing of the atmosphere. Design of the lidar is presented including aspects in the laser transmitter, receiver, photodetector, and signal processing. Calibration tests and sample atmospheric data are presented on wind and aerosol profiling.

  17. 2 Micrometers InAsSb Quantum-dot Lasers

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Uhl, David; Keo, Sam

    2004-01-01

    InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

  18. 11 micrometer emissivities and droplet radii for marine stratocumulus

    NASA Technical Reports Server (NTRS)

    Luo, Gang; Lin, Xijian; Coakley, James A.

    1994-01-01

    The results of a new multispectral infrared retrieval scheme for obtaining fractional cloud cover and 11 micrometer emissivity with those of the spatial coherence method which obtains fractional cloud cover assuming that the clouds are opaque at infrared wavelengths. Both methods are applied to 4-km NOAA advanced very high resolution radiometer global area coverage data for 250-km-scale regions containing single-layered marine stratocumulus off the coast of South America. The average 11 micrometer emissivity for low level clouds is found to be between 0.70 and 0.85. The low emissivity is evidently due to the thinning of clouds at their edges. Semitransparent cloud edges evidently make up a substantial portion of the area covered by such clouds. This result indicates that cloud cover obtained using the spatial coherence method is underestimated by 0.1 to 0.2, as has been claimed in a previous study. The fractional cloud cover for the ensemble of 250-km-scale regions studied here increased slightly from 0.60 for daytime observations to 0.63 for nighttime observations. The 11 micrometer emissivity also increased slightly, but about half of the increase was related to the increase in cloud cover and a decrease in the relative area covered by cloud edge material. Presumably, the other half was due to an increase in cloud liquid water. Cloud height showed no significant change. The average effective droplet radius increased from 9.3 micrometers for daytime observations to 10.2 micrometers at night.

  19. 11 micrometer emissivities and droplet radii for marine stratocumulus

    NASA Technical Reports Server (NTRS)

    Luo, Gang; Lin, Xijian; Coakley, James A.

    1994-01-01

    The results of a new multispectral infrared retrieval scheme for obtaining fractional cloud cover and 11 micrometer emissivity with those of the spatial coherence method which obtains fractional cloud cover assuming that the clouds are opaque at infrared wavelengths. Both methods are applied to 4-km NOAA advanced very high resolution radiometer global area coverage data for 250-km-scale regions containing single-layered marine stratocumulus off the coast of South America. The average 11 micrometer emissivity for low level clouds is found to be between 0.70 and 0.85. The low emissivity is evidently due to the thinning of clouds at their edges. Semitransparent cloud edges evidently make up a substantial portion of the area covered by such clouds. This result indicates that cloud cover obtained using the spatial coherence method is underestimated by 0.1 to 0.2, as has been claimed in a previous study. The fractional cloud cover for the ensemble of 250-km-scale regions studied here increased slightly from 0.60 for daytime observations to 0.63 for nighttime observations. The 11 micrometer emissivity also increased slightly, but about half of the increase was related to the increase in cloud cover and a decrease in the relative area covered by cloud edge material. Presumably, the other half was due to an increase in cloud liquid water. Cloud height showed no significant change. The average effective droplet radius increased from 9.3 micrometers for daytime observations to 10.2 micrometers at night.

  20. Interband polarized absorption in InP polytypic superlattices

    SciTech Connect

    Faria Junior, P. E.; Sipahi, G. M.; Campos, T.

    2014-11-21

    Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well reported in the literature, a deeper theoretical understanding of how crystal phase mixing and quantum confinement change the output linear light polarization is still needed. In this paper, we theoretically investigate the mixing effects of wurtzite and zinc-blende phases on the interband absorption and in the degree of light polarization of an InP polytypic superlattice. We use a single 8 × 8 k⋅p Hamiltonian that describes both crystal phases. Quantum confinement is investigated by changing the size of the polytypic unit cell. We also include the optical confinement effect due to the dielectric mismatch between the superlattice and the vaccum and we show it to be necessary to match experimental results. Our calculations for large wurtzite concentrations and small quantum confinement explain the optical trends of recent photoluminescence excitation measurements. Furthermore, we find a high sensitivity to zinc-blende concentrations in the degree of linear polarization. This sensitivity can be reduced by increasing quantum confinement. In conclusion, our theoretical analysis provides an explanation for optical trends in InP polytypic superlattices, and shows that the interplay of crystal phase mixing and quantum confinement is an area worth exploring for light polarization engineering.

  1. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  2. Mt. Wilson Meets the Lyot Double Image Micrometer

    NASA Astrophysics Data System (ADS)

    Weise, Eric; Genet, Russell; Buchheim, Bob; Gelston, Ryan; Brewer, Mark; Genet, Cheryl; Gerhart, Christine; Wallen, Vera

    2015-07-01

    As part of the Mt. Wilson Double Star Workshop, the authors used a double image micrometer to observe two double stars, STF2383CD and STF2583AB, on the night of July 19, 2013 (B2013.547). The instrument was designed in 1949 by Bernard Lyot and built by Meca-Precis. We found separations of 2.53±0.29'' for STF2383CD and 1.58±0.40'' for STF2583AB, and positions angles of 77.8±2.3° for STF 2383CD and 103.4±1.6° for STF2583AB. The scarcity of double image micrometers and the opportunity to use the historic 60 inch telescope at Mt Wilson made this workshop a very unique experience.

  3. Micrometer- and Nanometer-Sized Polymeric Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Granstrom, Magnus; Berggren, Magnus; Inganas, Olle

    1995-03-01

    A method for the fabrication of micrometer- and submicrometer-sized polymeric light-emitting diodes is presented. Such diodes have a variety of applications. Light sources of dimensions around 100 nanometers are required for subwavelength, near-field optical microscopy. Another possible application is patterning on the micrometer and nanometer scale. The diodes have been made in the form of a sandwich structure, with the conductive polymer poly(3,4-ethylene-dioxythiophene) polymerized in the pores of commercially available microfiltration membranes defining the hole-injecting contacts, poly[3-(4-octylphenyl)-2,2'-bithiophene] as the light-emitting layer, and a thin film of calcium-aluminum as the electron injector.

  4. [Managment system in safety and health at work organization. An Italian example in public sector: Inps].

    PubMed

    Di Loreto, G; Felicioli, G

    2010-01-01

    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  5. Surface etching for light trapping in encapsulated InP solar cells

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Landis, Geoffrey A.

    1991-01-01

    Reducing the reflection from the surface of InP is important for increasing the efficiency of solar cells and photodetectors. In this paper a new technique for reducing reflectance of glass-encapsulated InP is reported. Low-angle grooves are produced on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. A significant decrease in surface reflection is measured.

  6. Systems and methods for advanced ultra-high-performance InP solar cells

    DOEpatents

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  7. Color lensless digital holographic microscopy with micrometer resolution.

    PubMed

    Garcia-Sucerquia, Jorge

    2012-05-15

    Color digital lensless holographic microscopy with micrometer resolution is presented. Multiwavelength illumination of a biological sample and a posteriori color composition of the amplitude images individually reconstructed are used to obtain full-color representation of the microscopic specimen. To match the sizes of the reconstructed holograms for each wavelength, a reconstruction algorithm that allows for choosing the pixel size at the reconstruction plane independently of the wavelength and the reconstruction distance is used. The method is illustrated with experimental results.

  8. 10.6 Micrometer Gradient Index Optical Component Design

    DTIC Science & Technology

    1983-11-01

    meters. If the wavelength of the instant radiation is 0.05 micrometers, then 40 interference fringes will be seen in a Mach-Zehnder interferometer ...80 will be observed in a Twyman -Green configuration). Thus, 40 fringes will be seen over a distance of 5 millimeters (the depth of the gradient) or 8...techniques but to introduce a modulation with two frequencies. The system, called a harmonic interferometer , has been described elsewhere [1]. The

  9. Multifunctional assembly of micrometer-sized colloids for cell sorting.

    PubMed

    Nie, Chenyao; Wang, Bing; Zhang, Jiangyan; Cheng, Yongqiang; Lv, Fengting; Liu, Libing; Wang, Shu

    2015-06-03

    Compared to the extensively studied nanometer-sized colloids, less attention has been paid to the assembly of micrometer-sized colloids with multifunctional characteristics. To address this need, a bottom-up approach is developed for constructing self-assemblies of micrometer-sized magnetic colloids possessing multifunctionality, including magnetic, optical, and biological activities. Biotinylated oligo (p-phenylene vinylene) (OPV) derivatives are designed to mediate the self-assembly of streptavidin-modified magnetic beads. The optical element OPV derivatives provide a fluorescence imaging ability for tracing the assembly process. Target cells can be recognized and assembled by the colloidal assembly with bioactive element antibodies. The colloidal assembly reveals better cell isolation performance by its amplified magnetic response in comparison to monodisperse colloids. The self-assembly of micrometer-sized magnetic colloids through a combination of different functional ingredients to realize multifunction is conceptually simple and easy to achieve. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Flashlamp Pumped, Room Temperature, Nd:YAG Laser Operating at 0.946 Micrometers

    NASA Technical Reports Server (NTRS)

    Barnes, Norman P.; Murray, Keith E.; Walsh, Brian M.

    1998-01-01

    Room temperature operation of flashlamp pumped Nd:YAG at 0.946 micrometers was achieved with a laser rod having undoped ends. Performance was characterized and compared with 1.064 micrometer operation and other quasi four level lasers.

  11. Electrical detection of spin hyperpolarization in InP

    NASA Astrophysics Data System (ADS)

    Caspers, Christian; Ansermet, Jean-Philippe

    2014-09-01

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ0H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  12. A 83 GHz InP DHBT static frequency divider

    NASA Astrophysics Data System (ADS)

    Youtao, Zhang; Xiaopeng, Li; Min, Zhang; Wei, Cheng; Xinyu, Chen

    2014-04-01

    A static frequency divider is presented using 0.7 μm InP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 × 0.65 mm2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.

  13. InAs nanowire formation on InP(001)

    SciTech Connect

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-12-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along <110> and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands.

  14. High efficiency InP solar cells from low toxicity tertiarybutylphosphine and trimethylindium by OMVPE

    SciTech Connect

    Hoffman, R.W. Jr.; Fatemi, N.S.; Wilt, D.M.; Brinker, D.J.; Jenkins, P.P.; Scheiman, D.A.

    1994-12-31

    Large scale manufacture of phosphide based compound semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p-type and n-type respectively. 16% efficient solar cells under air mass zero, one sun intensity were demonstrated with V{sub oc} of 871 mV and fill factor of 82.6%. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  15. Ultra-broadband terahertz spectroscopy of InP wafer using coherent heterodyne time domain spectrometer

    NASA Astrophysics Data System (ADS)

    Xu, Xiaoyan; Zhang, Liangliang; Zhang, Cunlin

    2015-08-01

    Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system. It is observed that InP wafer is opaque at the frequencies spanning from 6.7 THz to 12.1 THz. In the frequency regions of 0.8-6.7 THz and 12.1-18 THz it has relatively low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based component for nonlinear terahertz devices.

  16. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  17. Control of persistent photoconductivity in nanostructured InP through morphology design

    NASA Astrophysics Data System (ADS)

    Monaico, Ed; Postolache, V.; Borodin, E.; Ursaki, V. V.; Lupan, O.; Adelung, R.; Nielsch, K.; Tiginyanu, I. M.

    2015-03-01

    In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states.

  18. Characterization of Si implantation and annealing of InP by Raman spectroscopy

    SciTech Connect

    Artus, L.; Cusco, R.; Martin, J.M.; Gonzalez-Diaz, G.

    1995-12-31

    Raman scattering was used to assess the lattice damage caused by Si{sup +} implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si{sup +} with doses in the range of 10{sup 12} to 5 {times} 10{sup 14}cm{sup {minus}2}. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 10{sup 14} cm{sup {minus}2}. RTA of the implanted samples at 875 C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.

  19. INPE LANDSAT-D thematic mapper computer compatible tape format specification

    NASA Technical Reports Server (NTRS)

    Parada, N. D. J. (Principal Investigator); Desouza, R. C. M.

    1982-01-01

    The format of the computer compatible tapes (CCT) which contain Thematic Mapper (TM) imagery data acquired from the LANDSAT D and D Prime satellites by the INSTITUTO DE PERSQUISAS ESPACIALS (CNPq-INPE/BRAZIL) is defined.

  20. Operational training for the mission operations at the Brazilian National Institute for Space Research (INPE)

    NASA Technical Reports Server (NTRS)

    Rozenfeld, Pawel

    1993-01-01

    This paper describes the selection and training process of satellite controllers and data network operators performed at INPE's Satellite Tracking and Control Center in order to prepare them for the mission operations of the INPE's first (SCD1) satellite. An overview of the ground control system and SCD1 architecture and mission is given. Different training phases are described, taking into account that the applicants had no previous knowledge of space operations requiring, therefore, a training which started from the basics.

  1. Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cornet, D. M.; Mazzetti, V. G. M.; LaPierre, R. R.

    2007-01-01

    InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {-211} family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300nm were completely free of stacking faults.

  2. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    PubMed

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  3. Enhancing optical absorption in InP and GaAs utilizing profile etching

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Fatemi, Navid S.; Landis, Geoffrey A.

    1991-01-01

    The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

  4. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    PubMed

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  5. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    PubMed

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.

  6. Additive Manufacturing of Metal Structures at the Micrometer Scale.

    PubMed

    Hirt, Luca; Reiser, Alain; Spolenak, Ralph; Zambelli, Tomaso

    2017-05-01

    Currently, the focus of additive manufacturing (AM) is shifting from simple prototyping to actual production. One driving factor of this process is the ability of AM to build geometries that are not accessible by subtractive fabrication techniques. While these techniques often call for a geometry that is easiest to manufacture, AM enables the geometry required for best performance to be built by freeing the design process from restrictions imposed by traditional machining. At the micrometer scale, the design limitations of standard fabrication techniques are even more severe. Microscale AM thus holds great potential, as confirmed by the rapid success of commercial micro-stereolithography tools as an enabling technology for a broad range of scientific applications. For metals, however, there is still no established AM solution at small scales. To tackle the limited resolution of standard metal AM methods (a few tens of micrometers at best), various new techniques aimed at the micrometer scale and below are presently under development. Here, we review these recent efforts. Specifically, we feature the techniques of direct ink writing, electrohydrodynamic printing, laser-assisted electrophoretic deposition, laser-induced forward transfer, local electroplating methods, laser-induced photoreduction and focused electron or ion beam induced deposition. Although these methods have proven to facilitate the AM of metals with feature sizes in the range of 0.1-10 µm, they are still in a prototype stage and their potential is not fully explored yet. For instance, comprehensive studies of material availability and material properties are often lacking, yet compulsory for actual applications. We address these items while critically discussing and comparing the potential of current microscale metal AM techniques. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Spontaneous formation of micrometer-size inorganic peapods.

    PubMed

    Roy, Soumyajit; Rijneveld-Ockers, Maria T; Groenewold, Jan; Kuipers, Bonny W M; Meeldijk, Hans; Kegel, Willem K

    2007-05-08

    We show that polyoxometalate (ammonium phosphomolybdate) Keggin in aqueous dispersions upon sonication spontaneously transforms into micrometer-sized, peapod-shaped structures. The formation of these peapods is preceded by the generation of spherical aggregates. The particles have been characterized experimentally by time-resolved dynamic light scattering (DLS), transmission electron microscopy (TEM), and scanning TEM with a high-angle annular dark field detector (STEM-HAADF) for energy-dispersive X-ray (STEM/EDX) elemental analyses. A pathway for the phenomenon is proposed.

  8. P/N InP solar cells on Ge wafers

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  9. Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

    NASA Astrophysics Data System (ADS)

    Naji, K.; Saint-Girons, G.; Penuelas, J.; Patriarche, G.; Largeau, L.; Dumont, H.; Rojo-Romeo, P.; Gendry, M.

    2013-06-01

    It is demonstrated that the growth direction of InP nanowires grown on (001)-oriented silicon substrate strongly depends on the diameter of the gold catalyst droplets. Small droplets with diameter less than about 15 nm lead to the formation of nanowires leaning on the {111} planes of the zinc blende InP seeds formed in the early stages of growth. Larger droplets lead to the formation of twins in the InP seeds and to the formation of nanowires leaning on the {111} planes of these twinned InP variants, inducing growth directions corresponding to the <115> directions of the silicon substrate.

  10. Surface forces of colloidal particles from micrometer to nanometer

    NASA Astrophysics Data System (ADS)

    Cho, Jeong-Min

    2003-10-01

    Surface forces of colloidal particles play critical roles in the macroscopic behavior of particulate systems such as dispersion and coagulation, adhesion and coating, and the rheological behavior of ceramic slurries. As particle size is decreased from micrometer to nanometer range, surface forces are increasingly important. Polyelectrolytes are the chemical additives commonly used to efficiently control the stabilization of the colloidal system. Their conformations on the solid surfaces as well as the interactions between the adsorbed polyelectrolytes are important issues in colloidal processing. Most experimental and theoretical approaches to the surface forces are based on particle sizes in the micrometer range. However, nanoparticles at close proximity or high solids loading are expected to show different behavior than what can be estimated from conventional theories such as continuum or mean field theories. My study examined the effect of pH, ionic strength, and molecular weight of the polyelectrolytes on the surface forces of colloidal particles by the interplay with the adsorption, turbidity, and direct surface force measurement in terms of the conformation on the solid surfaces. The colloid probe technique based on atomic force microscopy (AFM) is well established for micron size particles; and could be extended for nanosize particles by using carbon nanotubes as proximal probes. Nanotubes with their high aspect ratio avoid the contribution from cone shapes that happens with AFM tips. The difference in particle size significantly influences surface forces for sterically dispersed colloidal systems.

  11. EL2-like defects in InP nanowires: An ab initio total energy investigation

    NASA Astrophysics Data System (ADS)

    Miwa, R. H.; Schmidt, T. M.; Fazzio, A.

    2007-04-01

    We have performed an ab initio total energy investigation, within the density-functional theory, of antisite defects in InP nanowires (InP NWs) grown along the [111] direction. Our total energy results indicate that (i) P antisites (PIn) are the most likely antisite defect compared with In antisites (InP) and (ii) the formation energies of P and In antisites do not depend on the NW diameter. In particular, in thin InP NWs, with diameters of ˜13Å , the PIn antisite exhibits a trigonal symmetry, lying at 0.15Å from the Td site, followed by a metastable configuration with PIn in an interstitial position ( 1.15Å from the Td site). We find a PIn-P dissociation energy of 0.33eV , and there is no EL2-like center for such a thin InP NW. However, EL2-like defects occur by increasing the NW diameter. For diameters of ˜18Å , the PIn-P dissociation energy increases to 0.53eV , which is 0.34eV lower compared with the PIn-P dissociation energy for the InP bulk phase, 0.87eV . We mapped the atomic displacements and calculated the relaxation energy, Franck-Condon shift, upon single excitation of PIn induced states in InP NW. The formation (or not) of EL2-like defects, PIn dissociation energy barrier, and the Franck-Condon energy shift can be tuned by the NW diameter.

  12. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    NASA Technical Reports Server (NTRS)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  13. Preliminary design of the INPE's Solar Vector Magnetograph

    NASA Astrophysics Data System (ADS)

    Vieira, L. E. A.; de Gonzalez, A. L. Clúa; Lago, A. Dal; Wrasse, C.; Echer, E.; Guarnieri, F. L.; Cardoso, F. Reis; Guerrero, G.; Costa, J. Rezende; Palacios, J.; Balmaceda, L.; Alves, L. Ribeiro; da Silva, L.; Costa, L. L.; Sampaio, M.; Soares, M. C. Rabello; Barbosa, M.; Domingues, M.; Rigozo, N.; Mendes, O.; Jauer, P.; Dallaqua, R.; Branco, R. H.; Stekel, T.; Gonzalez, W.; Kabata, W.

    2015-10-01

    We describe the preliminary design of a magnetograph and visible-light imager instrument to study the solar dynamo processes through observations of the solar surface magnetic field distribution. The instrument will provide measurements of the vector magnetic field and of the line-of-sight velocity in the solar photosphere. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in reaching the scientific goals of The Atmospheric and Space Science Coordination (CEA) at the Brazilian National Institute for Space Research (INPE). In particular, the CEA's space weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is acquiring progressively the know-how to build state-of-the-art solar vector magnetograph and visible-light imagers for space-based platforms to contribute to the efforts of the solar-terrestrial physics community to address the main unanswered questions on how our nearby Star works.

  14. InP shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

    1989-01-01

    Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

  15. Mn doped InP nanowires: An ab initio study

    NASA Astrophysics Data System (ADS)

    Schmidt, Tome; Venezuela, Pedro; Arantes, Jeverson; Fazzio, Adalberto

    2006-03-01

    We investigated the electronic and magnetic properties of Mn doped InP nanowires. Our study was based on total energy density functional calculations. The Mn dopants were placed substitutionally in In atom sites. We have found that the most energetically favorable position for the Mn atom is near the surface. However, a small amount of Mn atoms will be located at ``bulk-like'' positions in the wire. When the Mn atoms are in ``bulk-like'' positions, the Mn-3d majority-spin-orbitals appear in two different regions of the valence band (VB): about 2.0 eV below the top of the VB and resonant with the top of the VB. In these cases there is also an empty orbital in the gap whit p-character. The total valence spin-densities (ρ- ρ), for a single Mn atom in any of the configurations studied here, show a strong localized magnetic moment around the Mn atom site. In order to study the magnetic coupling we also did calculations with two Mn atoms in each cell. For several configurations studied, we concluded that if both Mn atoms are in ``bulk-like'' positions the system presents ferromagnetic ordering. On the other hand, if at least one of the Mn atoms is located near the surface, there is no magnetic ordering or the system is antiferromagnetic.

  16. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  17. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  18. Nanocone formation on ion-bombarded InP surfaces

    NASA Astrophysics Data System (ADS)

    Kramczynski, Detlef; Gnaser, Hubert

    2015-11-01

    Surfaces of InP(1 0 0) were bombarded by 2.1 keV Ar+ ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied roughly from 1 × 1017 cm-2 to 3 × 1018 cm-2 while ion fluxes in the range of (0.1-2) × 1014 cm-2 s-1 were used. The surface morphology resulting from these ion irradiations was examined by scanning electron microscopy (SEM). For a specific range of ion fluxes and fluences, regular closely-spaced nanocone arrays are found to form, with the cones having typical base diameters of about 100 nm. Around their outer peripheries, they commonly exhibit rather distinct protrusions, an observation not reported in previous investigations. The inspection of the initial stages of nanocone formation indicates that the growth of adatom islands, first on the pristine surface and later on previously formed islands, may lead to these 3D nanostructures. This finding would imply that surface diffusion processes of adatoms constitute an important mechanism in the evolution of the observed topography.

  19. Microstructural and Compositional Relations of Granitoid Clasts in Lunar Breccias at the Micrometer to Sub-Micrometer Scale

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Simon, J. I.; Mills, R. D.; Ross, D. K.; Tappa, M.

    2015-01-01

    Lunar granitoid lithologies have long been of interest for the information they provide on processes leading to silicic melt compositions on the Moon. The extraction of such melts over time affects the distribution and budget of incompatible materials (i.e., radiogenic heat producing elements and volatiles) of the lunar interior. We have recently shown that in addition to their high concentrations of incompatible lithophile elements, some granitoid clasts in lunar breccias have significant indigenous water contents in their alkali feldspars. This raises the importance of lunar granitoid materials in the expanding search for mineralogic/petrologic hosts of indigenous lunar water-related species. We are undertaking a detailed survey of the petrologic/mineralogical relations of granitoid clasts in lunar breccias to achieve a better understanding of the potential of these diverse assemblages as hosts for volatiles, and as candidates for additional isotope chronology studies. Our preliminary results reported here based on high-resolution field-emission SEM, EPMA and TEM studies uncover immense complexity in these materials at the micrometer to sub-micrometer scale that heretofore have not been fully documented.

  20. Single n(+)-i-n(+) InP nanowires for highly sensitive terahertz detection.

    PubMed

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n(+)-i-n(+) InP nanowires. The axial doping profile of the n(+)-i-n(+) InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n(+)-i-n(+) InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  1. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

    NASA Astrophysics Data System (ADS)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L.; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B.; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-01

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n+-i-n+ InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  2. Optimized Cleaning Method for Producing Device Quality InP(100) Surfaces

    SciTech Connect

    Sun, Y.

    2005-02-07

    A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide/sulfuric acid based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which can not be removed by thermal annealing. Therefore, a second chemical etching step is needed to remove the oxide. We found that strong acid solutions with HCl or H{sub 2}SO{sub 4} are able to remove the surface oxide and leave the InP surface passivated with elemental P which is, in turn, terminated with H. This yields a hydrophobic surface and allows for lower temperatures to be used during annealing. We also determined that the effectiveness of oxide removal is strongly dependent on the concentration of the acid. Surfaces cleaned by HF solutions were also studied and result in a hydrophilic surface with F terminated surface In atoms. The chemical reactions leading to the differences in behavior between InP and GaAs are analyzed and the optimum cleaning method for InP is discussed.

  3. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    PubMed

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  4. The salicylidene acylhydrazide INP0341 attenuates Pseudomonas aeruginosa virulence in vitro and in vivo.

    PubMed

    Uusitalo, Pia; Hägglund, Ulrik; Rhöös, Elin; Scherman Norberg, Henrik; Elofsson, Mikael; Sundin, Charlotta

    2017-08-01

    Pseudomonas aeruginosa is an opportunistic pathogen that can be very hard to treat because of high resistance to different antibiotics and alternative treatment regimens are greatly needed. An alternative or a complement to traditional antibiotic is to inhibit virulence of the bacteria. The salicylidene acylhydrazide, INP0341, belongs to a class of compounds that has previously been shown to inhibit virulence in a number of Gram-negative bacteria. In this study, the virulence blocking effect of INP0341 on P. aeruginosa was studied in vitro and in vivo. Two important and closely related virulence system were examined, the type III secretion system (T3SS) that translocates virulence effectors into the cytosol of the host cell to evade immune defense and facilitate colonization and the flagella system, needed for motility and biofilm formation. INP0341 was shown to inhibit expression and secretion of the T3SS toxin exoenzyme S (ExoS) and to prevent bacterial motility on agar plates and biofilm formation. In addition, INP0341 showed an increased survival of P. aeruginosa-infected mice. In conclusion, INP0341 attenuates P. aeruginosa virulence.

  5. InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers.

    SciTech Connect

    Overberg, Mark E.; Cederberg, Jeffrey George

    2010-09-01

    InP substrates form the starting point for a wide variety of semiconductor devices. The surface morphology produced during epitaxy depends critically on the starting substrate. We evaluated (1 0 0)-oriented InP wafers from three different vendors by growing thick (5 mu m) lattice-matched epilayers of InP, Gain As, and AlInAs. We assessed the surfaces with differential interference contrast microscopy and atomic force microscopy. Wafers with near singular (1 0 0) orientations produced inferior surfaces in general. Vicinal substrates with small misorientations improved the epitaxial surface for InP dramatically, reducing the density of macroscopic defects while maintaining a low RMS roughness. GaInAs and AlInAs epitaxy step-bunched forming undulations along the miscut direction. Sulfur-doped wafers were considered for singular (1 0 0) and for 0.2 degrees misorientation toward (1 1 0). We found that mound defects observed for InP and GaInAs layers on iron-doped singular wafers were absent for singular sulfur-doped wafers. These observations support the conclusion that dislocation termination at the surface and expansion of the step spiral lead to the macroscopic defects observed.

  6. The (C2) 158 micrometer emission from the Horsehead nebula

    NASA Technical Reports Server (NTRS)

    Zhou, S.; Jaffe, D. T.; Howe, J. E.; Geis, N.; Herrmann, F.; Madden, S. C.; Poglitsch, A.; Stacey, G. J.

    1993-01-01

    The C II 158 micrometer line and the several rotational lines of CO, CO-13, and CS toward selected positions in the Horsehead extinction region in IC 434 are mapped. The observations show that the region has a gas density of about 10,000 cu cm and an external UV (Ultraviolet) flux to 20 to 100 times the average interstellar UV field. Although this is a regime where the C+ emission varies rapidly with UV intensity, fine structure line emission from gas with this range of physical conditions were not investigated previously. Comparisons of results with models of photodissociation regions show that existing plane parallel photodissociation region models are in general agreement with the observed intensity. It is not necessary to invoke a clumpy structure in the boundary layer to explain the observations, but the overall geometry of the cloud is important in determining the distribution of C+ emission.

  7. Micrometer-thickness liquid sheet jets flowing in vacuum

    NASA Astrophysics Data System (ADS)

    Galinis, Gediminas; Strucka, Jergus; Barnard, Jonathan C. T.; Braun, Avi; Smith, Roland A.; Marangos, Jon P.

    2017-08-01

    Thin liquid sheet jet flows in vacuum provide a new platform for performing experiments in the liquid phase, for example X-ray spectroscopy. Micrometer thickness, high stability, and optical flatness are the key characteristics required for successful exploitation of these targets. A novel strategy for generating sheet jets in vacuum is presented in this article. Precision nozzles were designed and fabricated using high resolution (0.2 μm) 2-photon 3D printing and generated 1.49 ± 0.04 μm thickness, stable, and <λ /20-flat jets in isopropanol under normal atmosphere and under vacuum at 5 × 10-1 mbar. The thin sheet technology also holds great promise for advancing the fields of high harmonic generation in liquids, laser acceleration of ions as well as other fields requiring precision and high repetition rate targets.

  8. The (C2) 158 micrometer emission from the Horsehead nebula

    NASA Technical Reports Server (NTRS)

    Zhou, S.; Jaffe, D. T.; Howe, J. E.; Geis, N.; Herrmann, F.; Madden, S. C.; Poglitsch, A.; Stacey, G. J.

    1993-01-01

    The C II 158 micrometer line and the several rotational lines of CO, CO-13, and CS toward selected positions in the Horsehead extinction region in IC 434 are mapped. The observations show that the region has a gas density of about 10,000 cu cm and an external UV (Ultraviolet) flux to 20 to 100 times the average interstellar UV field. Although this is a regime where the C+ emission varies rapidly with UV intensity, fine structure line emission from gas with this range of physical conditions were not investigated previously. Comparisons of results with models of photodissociation regions show that existing plane parallel photodissociation region models are in general agreement with the observed intensity. It is not necessary to invoke a clumpy structure in the boundary layer to explain the observations, but the overall geometry of the cloud is important in determining the distribution of C+ emission.

  9. Diffusion of micrometer-sized soft particles in confinement

    NASA Astrophysics Data System (ADS)

    Jordan, Benjamin; Aptowicz, Kevin

    We investigate the diffusion of micrometer sized poly(N-isopropylacrylamide) (PNIPAM) gel particles in confinement. The influence of confinement on the transport of small particles is becoming increasingly important for microfluidics and bio-fluidics. Analytical solutions to this problem are limited to very unique geometries or gross approximations. Computational methods have provided more insight into the problem as well as experimental investigations. However, most research has focused on the hard-sphere problem. In this work, we will explore the diffusion of soft particles in confinement. The dynamics of the particles confined between two parallel walls is captured with video-microscopy. In addition, we use a recently developed technique to measurement confinement of particles in-situ with a precision of 1%. This poster will present some preliminary results of how confinement affects the diffusion of these soft particles. We acknowledge support from Grant DMR-1206231.

  10. Reduction of micrometer cometary observations to the PPM star catalogue

    NASA Astrophysics Data System (ADS)

    Gabryszewski, Ryszard

    1997-12-01

    An adaptation of Bielicki's method of reduction of old cometary micrometer observations of the comet-minus-star type to the PPM star catalogue is presented. A fully automatic utility is described which reduces old positions of stars to the coordinates in the PPM star catalogue for comet-minus-star astrometric observations. The reduction clears observations from systematic errors in old catalogues and decreases the mean error of observations. That may have implications for orbit improvement. The utility predicts new positions of stars in the PPM catalogue as needed and can also restore observations which have been previously rejected due to a selection criterion. It helps to get all data in one, coherent reference frame with maximum possible precision when there are lots of old and new observations of the same object. As an illustration, results of application of the utility to observations of comets 122P/de Vico and 109P/Swift-Tuttle are presented.

  11. InP nanostructures formed in GaP-based nanowires grown on Si(1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Tateno, K.; Zhang, G.; Nakano, H.

    2008-06-01

    Two types of InP growth in GaP-based nanowires have been reported. The nanowires were grown by the vapor-liquid-solid method using Au particles of around 20-nm diameter as catalysts. For GaP/InP/GaP nanowire growth, InP egg-like structures were formed when the InP growth temperature was higher than the GaP growth one. Successively, the second GaP nanowire could be grown on these InP structures. Transmission electron microscopy and energy dispersive X-ray spectroscopy analyses indicated that these InP nanostructures were grown in both the axial and radial directions and that the edge of the first GaP nanowires was partly covered with InP, which formed a core-shell structure. For InP capping growth, which was performed after the growth of two-times-alternated GaP/GaAs on GaP nanowires, selective InP growth on the two GaAs parts was confirmed.

  12. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  13. Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures

    DTIC Science & Technology

    2010-03-01

    OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT ELEVATED TEMPERATURES THESIS...ENP/10-M08 OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT ELEVATED TEMPERATURES THESIS Presented to the Faculty Department...2010 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED AFIT/GAP/ENP/10-M08 OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT

  14. Schottky barrier heights of Hg, Cd, and Zn on n-type InP(100)

    NASA Astrophysics Data System (ADS)

    Sa, C. J.; Meiners, L. G.

    1986-06-01

    The electrical properties of Schottky barrier heights of Hg, Cd, and Zn on chemically cleaned n-type InP(100) are examined. The fabrication of Hg/InP, Cd/InP, and Zn/InP diodes is described; Hg/InP diodes were formed using a mercury probe, and Cd/InP and Zn/InP diodes were fabricated by electroplating techniques. Dark forward bias current-voltage and dark reverse bias capacitance voltage were measured to characterized the Schottky diodes. The effects of oxide interfacial layers and deposited metal diffusion into the InP on the Schottky barrier heights are analyzed. The barrier heights are calculated as 0.92 eV for the Hg/n-InP, 0.62 eV for the Cd/n-InP, and 0.43 eV for the Zn/n-Inp.

  15. Single-dot optical emission from ultralow density well-isolated InP quantum dots

    SciTech Connect

    Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.

    2008-10-06

    We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.

  16. Nucleation and growth evolution of InP dots on InGaP/GaAs

    NASA Astrophysics Data System (ADS)

    Bortoleto, J. R. R.; Gazoto, A.; Brasil, M. J. S. P.; Meneses, E. A.; Cotta, M. A.

    2010-07-01

    We have investigated the evolution in the heteroepitaxy of InP on InGaP/GaAs (0 0 1) layers from the initial formation of a strained wetting layer (WL) up to the development of quantum dots. Atomic force microscopy and RHEED as well as continuous and time-resolved photoluminescence measurements provide evidence of four main stages for InP growth evolution. Our results indicate that the InP dot formation occurs according to the Stranski-Krastanov growth mode coupled to a WL erosion mechanism driven by the spatially variable strain field present in the WL. Moreover, the correlation of morphological and optical data indicates the stability of dot shapes and interfaces in this system.

  17. Defect reaction network in Si-doped InP : numerical predictions.

    SciTech Connect

    Schultz, Peter Andrew

    2013-10-01

    This Report characterizes the defects in the defect reaction network in silicon-doped, n-type InP deduced from first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si-doped InP until culminating in immobile reaction products. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon-related defects in the reaction network. This Report serves to extend the results for intrinsic defects in SAND 2012-3313: %E2%80%9CSimple intrinsic defects in InP: Numerical predictions%E2%80%9D to include Si-containing simple defects likely to be present in a radiation-induced defect reaction sequence.

  18. Excitonic properties of wurtzite InP nanowires grown on silicon substrate

    NASA Astrophysics Data System (ADS)

    Alouane, M. H. Hadj; Chauvin, N.; Khmissi, H.; Naji, K.; Ilahi, B.; Maaref, H.; Patriarche, G.; Gendry, M.; Bru-Chevallier, C.

    2013-01-01

    In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V/III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.

  19. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  20. Optical and structural properties of sulfur-doped ELOG InP on Si

    NASA Astrophysics Data System (ADS)

    Sun, Yan-Ting; Junesand, Carl; Metaferia, Wondwosen; Kataria, Himanshu; Julian, Nick; Bowers, John; Pozina, Galia; Hultman, Lars; Lourdudoss, Sebastian

    2015-06-01

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO2 mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  1. Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging

    NASA Astrophysics Data System (ADS)

    Grundmann, M.; Christen, J.; Heinrichsdorff, F.; Krost, A.; Bimberg, D.

    1994-02-01

    InP has been grown on patterned Si substrates using a low temperature metalorganic chemical vapor deposition process which insures compatibility with integrated circuit technology. Two different patterns are investigated: wet chemically etched V-grooves and SiO2-masked dry etched grooves. Reduction of feature size leads to drastic defect reduction and quantum efficiencies up to those of homoepitaxially grown InP. Strain relaxation and quantum efficiency are directly visualized by cathololuminescence wavelength imaging. On (001)-and {111}-facets of V-grooves distinct relaxation of the tensile thermally induced strain are found. Surprisingly, in the bottom of V-grooves, close to or even at the InP/Si interface, a high quantum efficiency is found with a recombination time constant typical for thick InP layers of high crystallographic quality.

  2. Optical and structural properties of sulfur-doped ELOG InP on Si

    SciTech Connect

    Sun, Yan-Ting Junesand, Carl; Metaferia, Wondwosen; Kataria, Himanshu; Lourdudoss, Sebastian; Julian, Nick; Bowers, John; Pozina, Galia; Hultman, Lars

    2015-06-07

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO{sub 2} mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  3. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    DTIC Science & Technology

    1995-01-01

    and SrF2 layers onto InP(100) have been grown at 350’C under ultra-high vacuum conditions using epitaxial and bulk substrates. MBE and Laser Vacuum... SrF2 /InP diodes prepared by sublimation of the fluoride under vacuum, an important modulation without hysteresis of the surface potential of the...grew the thin films of SrF2 by sublimation under a classical vacuum (10-7 Torr). They showed by Rutherford backscattering and by XPS measurements that

  4. Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

    NASA Technical Reports Server (NTRS)

    Bothra, S.; Tyagi, S. D.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.

  5. Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

    NASA Technical Reports Server (NTRS)

    Bothra, S.; Tyagi, S. D.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.

  6. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    NASA Technical Reports Server (NTRS)

    Bhimnathwala, H. G.; Tyagi, S. D.; Bothra, S.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

  7. Carrier removal and defect behavior in p-type InP

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  8. High Beginning-of-Life Efficiency p/n InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Weizer, Victor G.; Jenkins, Phillip P.; Ringel, Steven A.; Scheiman, David A.; Wilt, David M.; Brinker, David J.

    2004-01-01

    We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.

  9. Spatially controlled, nanoparticle-free growth of InP nanowires

    NASA Astrophysics Data System (ADS)

    Poole, P. J.; Lefebvre, J.; Fraser, J.

    2003-09-01

    A technique for the growth of InP nanowires, which does not rely on the vapor-liquid-solid growth mechanism, is demonstrated using selective-area chemical beam epitaxy. The nanowires are precisely positioned on an InP wafer and are always aligned along the available substrate <111>A directions. They have diameters as small as 40 nm, and typical lengths of 600 nm. They are found to be optically active, with thin embedded InAs layers showing quantum-dot-like behavior with well-defined excited states.

  10. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

    NASA Technical Reports Server (NTRS)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

    1997-01-01

    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  11. Fabrication of n(+)/p InP solar cells on silicon substrates

    NASA Technical Reports Server (NTRS)

    Keavney, C. J.; Vernon, S. M.; Haven, V. E.; Wojtczuk, S. J.; Al-Jassim, M. M.

    1989-01-01

    InP films were grown by MOCVD on Si GaAs substrates (as well as on InP substrates, included as controls), and were used to fabricate solar cells, using the Spitzer et al. (1987) technique. Contact to the substrate was made with Al-Ti-Pd-Ag to the Si wafers and with Au-Zn alloy to the GaAs wafers, while contract to the front was made with Cr-Au-Ag. Air mass zero efficiencies were found to be 7.1 percent for Si-substrate cells and 9.4 percent for GaAs-substrate cells.

  12. Beyond G-band : a 235 GHz InP MMIC amplifier

    NASA Technical Reports Server (NTRS)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  13. Beyond G-band : a 235 GHz InP MMIC amplifier

    NASA Technical Reports Server (NTRS)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  14. Cryogenic Fourier transform infrared spectrometer from 4 to 20 micrometers

    NASA Astrophysics Data System (ADS)

    Kaplan, Simon G.; Woods, Solomon I.; Jung, Timothy M.; Carter, Adriaan C.

    2010-07-01

    We describe the design and performance of a cryogenic Fourier transform spectrometer (Cryo-FTS) operating at a temperature of approximately 15 K. The instrument is based on a porch-swing scanning mirror design with active alignment stabilization using a fiber-optic coupled diode laser and voice-coil actuator mechanism. It has a KBr beamsplitter and has been integrated into an infrared radiometer containing a calibrated Si:As blocked impurity band (BIB) detector. Due to its low operating temperature, the spectrometer exhibits very small thermal background signal and low drift. Data from tests of basic spectrometer function, such as modulation efficiency, scan jitter, spectral range, and spectral resolution are presented. We also present results from measurements of faint point-like sources in a low background environment, including background, signal offset and gain, and spectral noise equivalent power, and discuss the possible use of the instrument for spectral characterization of ground-based infrared astronomy calibration sources. The Cryo-FTS is presently limited to wavelengths below 25 micrometers but can be in principle extended to longer wavelengths with changes in beamsplitter and detector.

  15. Flow and evaporation in single micrometer and nanometer scale pipes

    SciTech Connect

    Velasco, A. E.; Yang, C.; Siwy, Z. S.; Taborek, P.; Toimil-Molares, M. E.

    2014-07-21

    We report measurements of pressure driven flow of fluids entering vacuum through a single pipe of micrometer or nanometer scale diameter. Nanopores were fabricated by etching a single ion track in polymer or mica foils. A calibrated mass spectrometer was used to measure the flow rates of nitrogen and helium through pipes with diameter ranging from 10 μm to 31 nm. The flow of gaseous and liquid nitrogen was studied near 77 K, while the flow of helium was studied from the lambda point (2.18 K) to above the critical point (5.2 K). Flow rates were controlled by changing the pressure drop across the pipe in the range 0–31 atm. When the pressure in the pipe reached the saturated vapor pressure, an abrupt flow transition was observed. A simple viscous flow model is used to determine the position of the liquid/vapor interface in the pipe. The observed mass flow rates are consistent with no slip boundary conditions.

  16. 3D active stabilization system with sub-micrometer resolution.

    PubMed

    Kursu, Olli; Tuukkanen, Tuomas; Rahkonen, Timo; Vähäsöyrinki, Mikko

    2012-01-01

    Stable positioning between a measurement probe and its target from sub- to few micrometer scales has become a prerequisite in precision metrology and in cellular level measurements from biological tissues. Here we present a 3D stabilization system based on an optoelectronic displacement sensor and custom piezo-actuators driven by a feedback control loop that constantly aims to zero the relative movement between the sensor and the target. We used simulations and prototyping to characterize the developed system. Our results show that 95% attenuation of movement artifacts is achieved at 1 Hz with stabilization performance declining to ca. 70% attenuation at 10 Hz. Stabilization bandwidth is limited by mechanical resonances within the displacement sensor that occur at relatively low frequencies, and are attributable to the sensor's high force sensitivity. We successfully used brain derived micromotion trajectories as a demonstration of complex movement stabilization. The micromotion was reduced to a level of ∼1 µm with nearly 100 fold attenuation at the lower frequencies that are typically associated with physiological processes. These results, and possible improvements of the system, are discussed with a focus on possible ways to increase the sensor's force sensitivity without compromising overall system bandwidth.

  17. A subnanosecond pulsed ion source for micrometer focused ion beams.

    PubMed

    Höhr, C; Fischer, D; Moshammer, R; Dorn, A; Ullrich, J

    2008-05-01

    A new, compact design of an ion source delivers nanosecond pulsed ion beams with low emittance, which can be focused to micrometer size. By using a high-power, 25 fs laser pulse focused into a gas region of 10(-6) mbar, ions at very low temperatures are produced in the small laser focal volume of 5 mum diameter by 20 mum length through multiphoton ionization. These ions are created in a cold environment, not in a hot plasma, and, since the ionization process itself does not significantly heat them, have as a result essentially room temperature. The generated ion pulse, up to several thousand ions per pulse, is extracted from the source volume with ion optical elements that have been carefully designed by simulation calculations. Externally triggered, its subnanosecond duration and even smaller time jitter allow it to be superimposed with other pulsed particle or laser beams. It therefore can be combined with any type of collision experiment where the size and the time structure of the projectile beam crucially affect the achievable experimental resolution.

  18. Pneumatic System for Concentration of Micrometer-Size Lunar Soil

    NASA Technical Reports Server (NTRS)

    McKay, David; Cooper, Bonnie

    2012-01-01

    A report describes a size-sorting method to separate and concentrate micrometer- size dust from a broad size range of particles without using sieves, fluids, or other processes that may modify the composition or the surface properties of the dust. The system consists of four processing units connected in series by tubing. Samples of dry particulates such as lunar soil are introduced into the first unit, a fluidized bed. The flow of introduced nitrogen fluidizes the particulates and preferentially moves the finer grain sizes on to the next unit, a flat plate impactor, followed by a cyclone separator, followed by a Nuclepore polycarbonate filter to collect the dust. By varying the gas flow rate and the sizes of various orifices in the system, the size of the final and intermediate particles can be varied to provide the desired products. The dust can be collected from the filter. In addition, electron microscope grids can be placed on the Nuclepore filter for direct sampling followed by electron microscope characterization of the dust without further handling.

  19. Experimental Study on Electrical Breakdown for Devices with Micrometer Gaps

    NASA Astrophysics Data System (ADS)

    Meng, Guodong; Cheng, Yonghong; Dong, Chengye; Wu, Kai

    2014-12-01

    The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro & nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2 μm to 40 μm were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages: (1) a constantly decreasing region (the gap width d < 5 μm), where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; (2) a plateau region with a near constant breakdown potential (5 μm < d < 10 μm) (3) a region for large gaps that adhered to Paschen's curve (d > 10 μm). And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.

  20. 3D Active Stabilization System with Sub-Micrometer Resolution

    PubMed Central

    Rahkonen, Timo; Vähäsöyrinki, Mikko

    2012-01-01

    Stable positioning between a measurement probe and its target from sub- to few micrometer scales has become a prerequisite in precision metrology and in cellular level measurements from biological tissues. Here we present a 3D stabilization system based on an optoelectronic displacement sensor and custom piezo-actuators driven by a feedback control loop that constantly aims to zero the relative movement between the sensor and the target. We used simulations and prototyping to characterize the developed system. Our results show that 95 % attenuation of movement artifacts is achieved at 1 Hz with stabilization performance declining to ca. 70 % attenuation at 10 Hz. Stabilization bandwidth is limited by mechanical resonances within the displacement sensor that occur at relatively low frequencies, and are attributable to the sensor's high force sensitivity. We successfully used brain derived micromotion trajectories as a demonstration of complex movement stabilization. The micromotion was reduced to a level of ∼1 µm with nearly 100 fold attenuation at the lower frequencies that are typically associated with physiological processes. These results, and possible improvements of the system, are discussed with a focus on possible ways to increase the sensor's force sensitivity without compromising overall system bandwidth. PMID:22900045

  1. Adhesion hysteresis and friction at nanometer and micrometer lengths

    SciTech Connect

    Szoszkiewicz, Robert; Bhushan, Bharat; Huey, Bryan D.; Kulik, Andrzej J.; Gremaud, Gerard

    2006-01-01

    Comparisons between adhesion hysteresis and friction at nanometer and micrometer length scales were investigated experimentally and theoretically. Nanoscale adhesion hysteresis was measured using the ultrasonic force microscopy (UFM) on mica, calcite, and a few metallic samples (Pt, Au, Cu, Zn, Ti, and Fe). Obtained adhesion hysteresis ranged between 4x10{sup -19} and 4x10{sup -18} J. At the microscale a similar setup with a nanoindenter was used and the same samples were investigated. Adhesion hysteresis measured at the microscale ranged between 8x10{sup -17} and 14x10{sup -17} J. Friction was investigated via lateral force microscopy, as well as by scratch tests done with the nanoindenter. Numerical simulations based on the UFM model as well as established theories of contact mechanics studied qualitative dependencies of adhesion hysteresis on experimental parameters. Quantitative relations between adhesion hysteresis and friction were obtained through an analytic model relying on elastic and adhesive properties of the contact. The model agreed with measurements and simulations.

  2. 78 FR 73698 - Prevention of Significant Deterioration for Particulate Matter Less Than 2.5 Micrometers...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-09

    ... Matter Less Than 2.5 Micrometers--Significant Impact Levels and Significant Monitoring Concentration... the Significant Impact Levels (SILs) for particulate matter less than 2.5 micrometers (PM 2.5 ). The...-1744. FOR FURTHER INFORMATION CONTACT: Mr. Ben Garwood, Office of Air Quality Planning and...

  3. Nucleosome organization of the yeast 2-micrometer DNA plasmid: a eukaryotic minichromosome.

    PubMed Central

    Nelson, R G; Fangman, W L

    1979-01-01

    The eukaryotic microorganism Saccharomyces cerevisiae contains 50-100 copies per cell of a circular plasmid called 2-micrometer DNA. The intracellular structure of these molecules, which represent about 4% of the total DNA, was examined by digestion of total cellular chromatin with micrococcal nuclease (nucleate 3'-oligonucleotidohydrolase, EC 3.1.31.1). Nuclease-resistant DNA fragments were fractionated by gel electrophoresis and 2-micrometer DNA sequences were detected by hybridization. The 2-micrometer and chromosomal DNA digestion patterns were very similar indicating that both types of DNA are condensed into nucleosomes. An analysis of these digestion patterns showed that the kinetics of digestion of 2-micrometer chromatin and total chromatin are similar and that both have the same nucleosome repeat length of about 165 base pairs. Native 2-micrometer plasmids were examined by zone sedimentation in sucrose gradients containing 0.15 M NaCl and were found to have a sedimentation constant of 75 S, about 3 times the sedimentation constant of protein-free 2-micrometer DNA. This sedimentation property is what would be expected for a 2-micrometer DNA minichromosome. We conclude that within the cell 2-micrometer DNA molecules are organized in a chromatin structure very similar to that of the yeast chromosomes. Images PMID:392520

  4. High speed QWIP FPAs on InP substrates

    NASA Astrophysics Data System (ADS)

    Eker, S. U.; Arslan, Y.; Besikci, C.

    2011-05-01

    Quantum well infrared photodetector (QWIP) technology has allowed the realization of low cost staring focal plane arrays (FPAs). However, AlGaAs/(In)GaAs QWIP FPAs suffer from low quantum and conversion efficiencies under high frame rate and/or low background conditions. We extensively discuss the effect of sensor gain on the FPA performance under various operating conditions, and highlight the superiority of the InP/InGaAs material system with respect to AlGaAs/GaAs for high speed/low background thermal imaging applications. InP/InGaAs QWIPs, providing a bias adjustable gain in a wide range, offer the flexibility of adapting the FPA to strict operating conditions. We also present an experimental comparison of large format AlGaAs/GaAs and (strained) InP/InGaAs QWIP FPAs under different operating conditions. A 640 × 512 QWIP FPA constructed with the 40-well strained InP/In 0.48Ga 0.52As material system displays a cut-off wavelength of 9.7 μm ( λ p = 8.9 μm) with a BLIP temperature higher than 65 K ( f/2), and a peak quantum efficiency as high as 12% with a broad spectral response (Δ λ/ λ p = 17%). The conversion efficiency of the FPA pixels is as high as 20% under large bias (4 V) where the detectivity is reasonably high (˜3 × 10 10 cm Hz 1/2/W, f/2, 65 K). While providing a considerably higher quantum efficiency than the pixels of a similar AlGaAs/GaAs FPA, the InP/InGaAs QWIP provides similar NETD values with much shorter integration times and, being less sensitive to the read noise, successfully operates with sub-millisecond integration times. The results clearly demonstrate that InP based material systems display high potential for single- and dual-band QWIP FPAs by overcoming the limitations of the standard GaAs based QWIPs under high frame rate and/or low background conditions.

  5. Dilute bismuthides on inp platform: growth, characterization, modeling and application

    NASA Astrophysics Data System (ADS)

    Zhong, Yujun

    Conventional III-V compounds (GaAs/ InGaAs/ InAlAs) containing a small amount of bismuth are called dilute bismuthides (a.k.a. dilute bismides). They are a relatively new class of materials and have interesting optical and electrical properties that lead to a large number of novel applications in mid-infrared(mid-IR) optoelectronics, IR transparent contact materials, photovoltaics and thermoelectrics. This dissertation focuses on the growth and characterization of dilute bismuthides with potential use in the first three applications. Incorporating Bi into conventional III-V compounds will cause a unique phenomenon called valence band anticrossing(VBAC). The interaction between the bismuth atom and the matrix material will make the valence band split into two bands: E+ and E-; E+ is closer to the conduction band than the original valence band of the matrix material. Using this effect, we can adjust the band gap and the valence band position of dilute bismuthides by controlling the bismuth concentration. The growth of bismuth-containing materials using molecular beam epitaxy (MBE) requires low growth temperature and strict stoichiometric III-V ratio. This dissertation will discuss in detail the optimum growth condition of InGaBiAs, the challenge of increasing the bismuth concentration, and the possible solution to produce high bismuth concentration samples. Accordingly, composition, strain and relaxation, surface morphology, optical properties and electrical properties of InGaBiAs thin films are characterized to study these materials. The first application of InGaBiAs is mid-IR optoelectronic materials. The band gap of InGaBiAs can be tuned within the mid-IR range, and the film can be produced being lattice-matched to the InP substrate. In addition, degenerately doped InGaBiAs:Si is an ideal choice for the transparent contact material in the infrared range due to its high transmittance and conductivity in this wavelength range. We next proposed a new upconversion

  6. Near-infrared continuum and 3.3 micrometer(s) polycyclic aromatic hydrocarbon imaging of the starburst ring in the type 1 Seyfert galaxy NGC 7469

    NASA Technical Reports Server (NTRS)

    Mazzarella, J. M.; Voit, G. M.; Soifer, B. T.; Matthews, K.; Graham, J. R.; Armus, L.; Shupe, D.

    1994-01-01

    High resolution near-infrared images of the type 1 Seyfert galaxy NGC 7469 have been obtained to probe its dusty nuclear environment. Direct J, H, and K images are relatively featureless, but residual images created by subtracting a smooth model based on best-fitting elliptical isophotes reveal a tight inner spiral whose high surface-brightness portions correspond to a previously detected 3 sec (1 kpc) diameter ring of radio continuum emission. The inner infrared spiral arms extended approximately equal to 4 sec NW and SE from the nucleus, and the NW arm joins up with large-scale spiral structure visible in the R band. The residual images also show a bar-like structure aligned with the brightest infrared/radio hotspots at PA approximately equal to 50 deg. Three infrared hotspots are detected which align remarkably well with 6 cm radio continuum sources. The near-infrared ring and the hotspots are visible in the residual images, and in a high-resolution direct K-band image restored to an effective resolution of 0.65 sec (FWHM) using the Richardson-Lucy algorithm. The infrared hotspots have luminosities of nuL(sub nu) (2.2 micrometer(s)) approximately equal to 10(exp 8) solar luminosity (M(sub k) approximately equal to -16 mag), suggesting they are either giant H II regions or individual supernovae. The two brightest regions may be associated with enhanced star formation triggered by orbit crowding of gas where spiral arms emerge from an inner bar. Narrowband (delta lambda/lambda approximately 1.5%) imaging in the 3.28 micrometer(s) dust emission feature and surrounding continuum confirms the 3 sec diameter 3.28 micrometer(s) emission region detected previously using multiaperture photometry. The extended polycyclic aromatic hydrocarbon (PAH) emission is slightly elongated and aligned with published 1O III1 line emission and 12.5 micrometer(s) continuum emission, apparently tracing the starburst. The presence of approximately equal to 25% of the total 3.28 micrometer(s

  7. Near-infrared continuum and 3.3 micrometer(s) polycyclic aromatic hydrocarbon imaging of the starburst ring in the type 1 Seyfert galaxy NGC 7469

    NASA Technical Reports Server (NTRS)

    Mazzarella, J. M.; Voit, G. M.; Soifer, B. T.; Matthews, K.; Graham, J. R.; Armus, L.; Shupe, D.

    1994-01-01

    High resolution near-infrared images of the type 1 Seyfert galaxy NGC 7469 have been obtained to probe its dusty nuclear environment. Direct J, H, and K images are relatively featureless, but residual images created by subtracting a smooth model based on best-fitting elliptical isophotes reveal a tight inner spiral whose high surface-brightness portions correspond to a previously detected 3 sec (1 kpc) diameter ring of radio continuum emission. The inner infrared spiral arms extended approximately equal to 4 sec NW and SE from the nucleus, and the NW arm joins up with large-scale spiral structure visible in the R band. The residual images also show a bar-like structure aligned with the brightest infrared/radio hotspots at PA approximately equal to 50 deg. Three infrared hotspots are detected which align remarkably well with 6 cm radio continuum sources. The near-infrared ring and the hotspots are visible in the residual images, and in a high-resolution direct K-band image restored to an effective resolution of 0.65 sec (FWHM) using the Richardson-Lucy algorithm. The infrared hotspots have luminosities of nuL(sub nu) (2.2 micrometer(s)) approximately equal to 10(exp 8) solar luminosity (M(sub k) approximately equal to -16 mag), suggesting they are either giant H II regions or individual supernovae. The two brightest regions may be associated with enhanced star formation triggered by orbit crowding of gas where spiral arms emerge from an inner bar. Narrowband (delta lambda/lambda approximately 1.5%) imaging in the 3.28 micrometer(s) dust emission feature and surrounding continuum confirms the 3 sec diameter 3.28 micrometer(s) emission region detected previously using multiaperture photometry. The extended polycyclic aromatic hydrocarbon (PAH) emission is slightly elongated and aligned with published 1O III1 line emission and 12.5 micrometer(s) continuum emission, apparently tracing the starburst. The presence of approximately equal to 25% of the total 3.28 micrometer(s

  8. The 3DVar Gridpoint Statistical Interpolation Impacts in the CPTEC/INPE Global Operational System

    NASA Astrophysics Data System (ADS)

    de Goncalves, L.

    2013-05-01

    A Global 3DVar (G3DVar) analysis cycle has become operacional since January 1st, 2013 at the Center for Weather Forecast and Climate Studies (CPTEC - Centro de Previsão de Tempo e Estudos Climáticos) from the Brazilian National Institute for Space Research (INPE - Instituto Nacional de Pesquisas Espaciais). The G3DVar, based upon the Gridpoint Statistical Interpolation (GSI) system produces every 6 hours analysis for the spectral T299L64 Atmospheric Global Circulation Model (AGCM/CPTEC/INPE) that runs at CPTEC/INPE to provide up to 168 hours forecasts. These analyses and forecasts were intercompared against the previous operational data assimilation scheme based on the Physical Space Assimilation System (PSAS) during two case studies for a typical South American summer meteorological system: the South Atlantic Convergence Zone (SACZ). This work presents the formal implementation of the G3DVar at CPTEC/INPE with a review of the satellite, conventional data and model background configurations along with the major improvements in the model skill when compared with the previous PSAS data assimilation system. Preliminary results show improvements in systematic errors for 850 and 250 hPa temperature, umididty and wind fields in the G3DVar compared to that in PSAS.

  9. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  10. Investigation of High Speed ICs in InP Using MIS Structures.

    DTIC Science & Technology

    1984-10-01

    3x3 digital multiplier for demonstration of the InP MISFET technolgy provides MSI levels of circuit integration as well as a self test mode of circuit...variables such as doping levels, oxide capacitance, mobility , transconductance, and even velocity saturation effects for short channel lengths. The end

  11. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    PubMed

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  12. Voc Degradation in TF-VLS Grown InP Solar Cells

    SciTech Connect

    Sun, Yubo; Sun, Xingshu; Johnston, Steve; Sutter-Fella, Carolin M.; Hettick, Mark; Javey, Ali; Bermel, Peter

    2016-11-21

    Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the whole sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.

  13. InGaAsP CW Lasers on (110) InP Substrates

    NASA Technical Reports Server (NTRS)

    Hawrylo, F. Z.

    1983-01-01

    Quality InGaAsP/InP CW laser structures grown by conventional liquidphase epitaxy on (110) InP substrates without using special growth procedures. Improved surface quality and grown-layer morphology are attributable to nearlyperfect surface stoichiometry of (110) surface which makes available equal numbers of In and P deposition sites.

  14. Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvy, M.

    1998-01-01

    We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

  15. Status and future directions of InP solar cell research

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.

    1992-01-01

    An overview of the current status and future directions of InP space solar cell research is provided. The scope of the paper does not allow us to discuss other recent major developments in InP cell modeling, contacts, and characterization, or developments in other solar cell materials. Solar cells made from InP and related materials are not expected to be used in the near future for terrestrial applications, but significant Air-Mass1.5 (AM1.5) cell efficiencies are given for comparison. This paper deals with the developments in single-junction cells, multijunction tandem cells, and space flight testing, including radiation effects. Concentrator InP solar cells are also discussed, since they offer the possibility of simultaneous thermal and current injection annealing. These cells also promise cost effectiveness and the concentrator elements may provide cells with extra protection from space radiation. The concluding section addresses the steps to be taken in the future and provides guidelines for further research and development.

  16. Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

    PubMed

    Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

    2016-09-06

    This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

  17. Properties of barrier contacts with nanosize TiB{sub x} layers to InP

    SciTech Connect

    Arsentyev, I. N. Bobyl, A. V.; Tarasov, I. S.; Boltovets, N. S. Ivanov, V. N.; Belyaev, A. E.; Kamalov, A. B.; Konakova, R. V. Kudryk, Ya. Ya.; Lytvyn, O. S.; Milenin, V. V.; Russu, E. V.

    2008-07-15

    Structural and electrical properties of Au-TiB{sub x}-nn{sup +}n{sup ++}-InP and TiB{sub x}-nn{sup +}n{sup ++}-InP multilayer barrier structures on standard ('rigid') and soft ('porous')n{sup ++}-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase epitaxy, metallic layers formed by magnetron sputtering, and porous substrates fabricated by electrochemical etching of the standard InP. Samples on porous substrates have the following advantages: leakage currents in their reverse current-voltage characteristics are ten times lower; the range of the exponential rise in current in the forward characteristics is an order of magnitude wider; the changes in the ideality factor and the Schottky barrier height, observed as the contact area varies by a factor of 100, are three and {approx}10 times smaller, respectively; and the structure of the layers is more stable in annealing at up to 800{sup o}C.

  18. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  19. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    PubMed Central

    2011-01-01

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa PMID:21711809

  20. Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos

    NASA Astrophysics Data System (ADS)

    Romanov, S. G.; Sotomayor Torres, C. M.; Yates, H. M.; Pemble, M. E.; Butko, V.; Tretijakov, V.

    1997-07-01

    Three-dimensional arrays of structurally confined InP wire-like nanostructures were grown in channels (nanotubes) of a chrysotile asbestos matrix by metalorganic chemical vapor deposition. The formation of the InP compound was confirmed by absorption spectroscopy, X-ray diffraction and Raman scattering. It is shown that the density of states around the band edge increases with the InP loading of the matrix. Photoluminescence spectra of the asbestos filled in with InP consist mainly of two bands: a high energy band which is interpreted to be associated with charge transfer from InP to defect states of the asbestos and a low energy band which is associated with energy relaxation in the InP deposit itself. We show that the optical properties of this material are dominated by the size and dimensionality of the pore system of the matrix for heavy loading and by the semiconductor-to-matrix interface for light loading of the matrix with InP.

  1. Portable Speech Synthesizer

    NASA Technical Reports Server (NTRS)

    Leibfritz, Gilbert H.; Larson, Howard K.

    1987-01-01

    Compact speech synthesizer useful traveling companion to speech-handicapped. User simply enters statement on board, and synthesizer converts statement into spoken words. Battery-powered and housed in briefcase, easily carried on trips. Unit used on telephones and face-to-face communication. Synthesizer consists of micro-computer with memory-expansion module, speech-synthesizer circuit, batteries, recharger, dc-to-dc converter, and telephone amplifier. Components, commercially available, fit neatly in 17-by 13-by 5-in. briefcase. Weighs about 20 lb (9 kg) and operates and recharges from ac receptable.

  2. THE STICKINESS OF MICROMETER-SIZED WATER-ICE PARTICLES

    SciTech Connect

    Gundlach, B.; Blum, J.

    2015-01-01

    Water ice is one of the most abundant materials in dense molecular clouds and in the outer reaches of protoplanetary disks. In contrast to other materials (e.g., silicates), water ice is assumed to be stickier due to its higher specific surface energy, leading to faster or more efficient growth in mutual collisions. However, experiments investigating the stickiness of water ice have been scarce, particularly in the astrophysically relevant micrometer-sized region and at low temperatures. In this work, we present an experimental setup to grow aggregates composed of μm-sized water-ice particles, which we used to measure the sticking and erosion thresholds of the ice particles at different temperatures between 114 K and 260 K. We show with our experiments that for low temperatures (below ∼210 K), μm-sized water-ice particles stick below a threshold velocity of 9.6 m s{sup –1}, which is approximately 10 times higher than the sticking threshold of μm-sized silica particles. Furthermore, erosion of the grown ice aggregates is observed for velocities above 15.3 m s{sup –1}. A comparison of the experimentally derived sticking threshold with model predictions is performed to determine important material properties of water ice, i.e., the specific surface energy and the viscous relaxation time. Our experimental results indicate that the presence of water ice in the outer reaches of protoplanetary disks can enhance the growth of planetesimals by direct sticking of particles.

  3. Some thermal and mechanical properties of InP essential to crystal growth modeling

    NASA Astrophysics Data System (ADS)

    Jordan, A. S.

    1985-06-01

    The key physical constants required in a realistic modeling of the Czochralski growth of InP have been critically assessed. In particular, we evaluated the (1) thermal expansion coefficient (α) and density from the fractional change in length, (2) thermal conductivity ( K) and diffusivity (κ), (3) elastic stiffness constants, and (4) heat capacity over a wide temperature range for this compound. Semi-empirical formulae are provided from which one can obtain reliable property values up to the melting point of InP ( Tf). At Tf -200 K (the average ambient temperature of the B 2O 3 encapsulant), we recommend α=6.8×10 -6 K -1, K =0.11 W/cm·K, and κ=0.0624 cm 2/s. These parameters in conjunction with the recently determined critical resolved shear stress of undoped and heavily doped InP at elevated temperatures indicate a lesser tendency for thermal stress induced dislocation generation during the LEC pulling of InP when compared with GaAs. As an illustrative example, we computed the dislocation distribution in a 111} InP wafer. It is shown that an undoped 4.5 cm diameter crystal prepared by the LEC technique contains a high density of dislocations (especially at the edge) and exhibits a sixfold "Star of David" pattern. On the other hand, material incorporating 1.3×10 19 cm -3 Ge with the same diameter should be dislocation-free apart of a 0.1 cm rim along its circumference.

  4. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    NASA Astrophysics Data System (ADS)

    Mamouri, R. E.; Ansmann, A.

    2015-12-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN) and with radius > 250 nm (APC250, reservoir of favorable INP), as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization) can be retrieved from lidar-derived aerosol extinction coefficients (AEC) with relative uncertainties of a factor of around 2 (APC50), and of about 25-50 % (APC250, ASC). Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke). We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine). Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN) and published INP parameterization schemes (with APC250 and ASC as input) we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  5. Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, Vik J.; Shalkhauser, K. A.; Messick, L. J.; Nguyen, R.; Schmitz, D.; Juergensen, H.

    1991-01-01

    The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

  6. Substrate-affected instability in accumulation-mode InP metal-insulator-semiconductor field-effect transistor

    SciTech Connect

    Lee, P.Z.; Chang, H.L.; Meiners, L.G.

    1988-06-15

    The mechanism for drain current drift in accumulation-type InP metal-insulator-semiconductor field-effect transistor has in the past several years been attributed to oxide traps, interface states, and bulk traps. In this study we have found that deep levels in the semi-insulating InP substrate material can in some cases dominate the current drift of the accumulation-mode metal-insultor-semiconductor field-effect transistor. Iron, which is a deep-level acceptor, when present in large concentrations in semi-insulating InP substrate material, appears to provide poor transistor properties and a large long-term current drift.

  7. Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Shalkhauser, Kurt A.; Messick, Louis J.; Nguyen, Richard; Schmitz, Dietmar; Jurgensen, Holger

    1991-01-01

    The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

  8. InP single-junction concentrator cell. Semi-annual report, October 1, 1980-March 31, 1981

    SciTech Connect

    Gregory, P.E.

    1981-01-01

    The purpose of this work is to develop a glass-sealed back-contacted InP or InGaAsP solar cell for use in concentrator systems. Work to be performed in developing this cell includes growing the InP epitaxial layers needed for cells and test structures, developing a model to be used in optimizing the cell structure, measurement of InP parameters necessary for use in the model, and developing the glass-bonding and back-contacting scheme. Accomplishments in these areas are discussed.

  9. On the Nature of the First Galaxies Selected at 350 Micrometers

    NASA Technical Reports Server (NTRS)

    Khan, Sophia A.; Chanial, Pierre F.; Willner, S. P.; Pearson, Chris P.; Ashby, M. L. N.; Benford, Dominic J.; Clements, David L.; Dye, Simon; Farrah, Duncan; Fazio, G. G.; hide

    2009-01-01

    We present constraints on the nature of the first galaxies selected at 350 micrometers. The sample includes galaxies discovered in the deepest blank-field survey at 350 micrometers (in the Bo6tes Deep Field) and also later serendipitous detections in the Lockman Hole. In determining multiwavelength identifications, the 350 lam position and map resolution of the second generation Submillimeter High Angular Resolution Camera are critical, especially in the cases where multiple radio sources exist and the 24 micrometer counterparts are unresolved. Spectral energy distribution templates are fitted to identified counterparts, and the sample is found to comprise IR-luminous galaxies at 1 < z < 3 predominantly powered by star formation. The first spectrum of a 350 micrometer selected galaxy provides an additional confirmation, showing prominent dust grain features typically associated with star-forming galaxies. Compared to submillimeter galaxies selected at 850 and 1100 micrometers, galaxies selected at 350 micrometers have a similar range of far-infrared color temperatures. However, no 350 micrometer selected sources are reliably detected at 850 or 1100 micrometers. Galaxies in our sample with redshifts 1 < z < 2 show a tight correlation between the far- and mid-infrared flux densities, but galaxies at higher redshifts show a large dispersion in their mid- to far-infrared colors. This implies a limit to which the mid-IR emission traces the far-IR emission in star-forming galaxies. The 350 micrometer flux densities (15 < S(sub 350) < 40 mJy) place these objects near the Herschel/SPIRE 350 micrometer confusion threshold, with the lower limit on the star formation rate density suggesting the bulk of the 350 micrometers contribution will come from less luminous infrared sources and normal galaxies. Therefore, the nature of the dominant source of the 350 micrometers background-star-forming galaxies in the epoch of peak star formation in the universe-could be more effectively

  10. High Temperature Mechanical Behavior of Polycrystalline Alumina from Mixed Nanometer and Micrometer Powders

    NASA Technical Reports Server (NTRS)

    Goldsby, Jon C.

    2001-01-01

    Sintered aluminum oxide materials were formed using commercial methods from mechanically mixed powders of nano-and micrometer alumina. The powders were consolidated at 1500 and 1600 C with 3.2 and 7.2 ksi applied stress in argon. The conventional micrometer sized powders failed to consolidate. While 100 percent nanometer-sized alumina and its mixture with the micrometer powders achieved less than 99 percent density. Preliminary high temperature creep behavior indicates no super-plastic strains. However high strains (less than 0.65 percent) were generated in the nanometer powder, due to cracks and linked voids initiated by cavitation.

  11. Pulse-Width Dependence of the Cooling Effect on Sub-Micrometer ZnO Spherical Particle Formation by Pulsed-Laser Melting in a Liquid.

    PubMed

    Sakaki, Shota; Ikenoue, Hiroshi; Tsuji, Takeshi; Ishikawa, Yoshie; Koshizaki, Naoto

    2017-05-05

    Sub-micrometer spherical particles can be synthesized by irradiating particles in a liquid with a pulsed laser (pulse width: 10 ns). In this method, all of the laser energy is supposed to be spent on particle heating because nanosecond heating is far faster than particle cooling. To study the cooling effect, sub-micrometer spherical particles are fabricated by using a pulsed laser with longer pulse widths (50 and 70 ns). From the increase in the laser-fluence threshold for sub-micrometer spherical particle formation with increasing pulse width, it is concluded that the particles dissipate heat to the surrounding liquid, even during several tens of nanoseconds of heating. A particle heating-cooling model considering the cooling effect is developed to estimate the particle temperature during laser irradiation. This model suggests that the liquid surrounding the particles evaporates, and the generated vapor films suppress heat dissipation from the particles, resulting in efficient heating and melting of the particles in the liquid. In the case of small particle sizes and large pulse widths, the particles dissipate heat to the liquid without forming such vapor films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  13. Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode

    NASA Astrophysics Data System (ADS)

    Geydt, P.; Dunaevskiy, M.; Alekseev, P.; Kakko, J.-P.; Haggrén, T.; Lähderanta, E.; Lipsanen, H.

    2016-11-01

    In this manuscript, we present the study of elastic properties of InP nanowires with help of scanning probe microscope in advanced PeakForce Tapping® regime. The measuring method was developed in order to investigate the Young's modulus of these cone-shaped structures with significant accuracy. The difference in InP elasticity for wurtzite phase and zinc- blende phase was revealed. It was shown that elastic modulus of InP nanowires significantly increases from 60 GPa to more than 100 GPa when diameter of a nanowire is reduced below 50 nm. The core-shell model for InP nanowire was used for the explanation of this effect.

  14. In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Hong-Liang; Terada, Yuki; Shimogaki, Yukihiro; Nakano, Yoshiaki; Sugiyama, Masakazu

    2009-10-01

    An in situ surface passivation of InP(100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 °C is free of P and In oxides even after exposure to air. The enhancement of photoluminescence intensity confirms that H2S passivation of an InP epilayer can reduce the surface defects. It is shown that H2S treatment results in In-S bonds, which dominate the sulfur-passivated InP surface, effectively suppressing interface oxidation during the subsequent ultrathin Al2O3 dielectric film growth.

  15. Optical and structural properties of 100 MeV Fe{sup 9+} ion irradiated InP

    SciTech Connect

    Dubey, R. L.; Dubey, S. K.; Bodhane, S. P.; Kanjilal, D.

    2016-05-06

    Single crystal InP samples were irradiated with 100 MeV Fe{sup 9+} ions for ion fluences 1x10{sup 12} and 1x10{sup 13} cm{sup −2}. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease in the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.

  16. Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

    2015-02-01

    In an attempt to achieve an InP-Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP-Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO2 mask which in turn would have been a consequence of the initial process treatments. The direct InP-Si heterointerface can find applications in high efficiency and cost-effective Si based III-V semiconductor multijunction solar cells and optoelectronics integration.

  17. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    NASA Astrophysics Data System (ADS)

    Mamouri, Rodanthi-Elisavet; Ansmann, Albert

    2016-05-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols), n100, dry (particles with dry radius > 100 nm, reservoir of desert dust CCN), and of n250, dry (particles with dry radius > 250 nm, reservoir of favorable INP), as well as profiles of the particle surface area concentration sdry (used in INP parameterizations) can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5-2 in the case of n50, dry and n100, dry and of about 25-50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine) and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input) and available INP parameterization schemes (with n250, dry and sdry as input) we finally compute

  18. Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

  19. Multiplexed chirp waveform synthesizer

    DOEpatents

    Dudley, Peter A.; Tise, Bert L.

    2003-09-02

    A synthesizer for generating a desired chirp signal has M parallel channels, where M is an integer greater than 1, each channel including a chirp waveform synthesizer generating at an output a portion of a digital representation of the desired chirp signal; and a multiplexer for multiplexing the M outputs to create a digital representation of the desired chirp signal. Preferably, each channel receives input information that is a function of information representing the desired chirp signal.

  20. Acid dissolution experiments - Carbonates and the 6.8-micrometer bands in interplanetary dust particles

    NASA Technical Reports Server (NTRS)

    Sandford, S. A.

    1986-01-01

    A chemical dissolution experiment on an interplanetary dust particle (IDP) showed that carbonates, not acid-insoluble organic compounds, were responsible for virtually all the absorption at 6.8 micrometers seen in the infrared spectra of this particle. The IDP examined had an infrared spectrum characteristic of layer-lattice silicates and belongs to a class of IDP's whose spectra resemble those of protostellar objects like W33 A, which also exhibit a band at 6.8 micrometers.

  1. Infrared images of jupiter at 5-micrometer wavelength during the voyager 1 encounter.

    PubMed

    Terrile, R J; Capps, R W; Backman, D E; Becklin, E E; Cruikshank, D P; Beichman, C A; Brown, R H; Westphal, J A

    1979-06-01

    A coordinated program to observe Jupiter at high spatial resolution in the 5-micrometer wavelength region was undertaken to support Voyager 1 imaging and infrared radiation experiment targeting. Jupiter was observed over a 5-month period from Palomar and Mauna Kea observatories. The frequency of observations allowed the selection of interesting areas for closer Voyager examination and also provided good short-term monitoring of variations in cloud morphology. Significant global changes in the 5-micrometer distribution are seen over this time period.

  2. Infrared images of Jupiter at 5-micrometer wavelength during the Voyager 1 encounter

    NASA Technical Reports Server (NTRS)

    Terrile, R. J.; Capps, R. W.; Backman, D. E.; Becklin, E. E.; Cruikshank, D. P.; Beichman, C. A.; Brown, R. H.; Westphal, J. A.

    1979-01-01

    A coordinated program to observe Jupiter at high spatial resolution in the 5-micrometer wavelength region was undertaken to support Voyager 1 imaging and infrared radiation experiment targeting. Jupiter was observed over a 5-month period from Palomar and Mauna Kea observatories. The frequency of observations allowed the selection of interesting areas for closer Voyager examination and also provided good short-term monitoring of variations in cloud morphology. Significant global changes in the 5-micrometer distribution are seen over this time period.

  3. Acid dissolution experiments - Carbonates and the 6.8-micrometer bands in interplanetary dust particles

    NASA Technical Reports Server (NTRS)

    Sandford, S. A.

    1986-01-01

    A chemical dissolution experiment on an interplanetary dust particle (IDP) showed that carbonates, not acid-insoluble organic compounds, were responsible for virtually all the absorption at 6.8 micrometers seen in the infrared spectra of this particle. The IDP examined had an infrared spectrum characteristic of layer-lattice silicates and belongs to a class of IDP's whose spectra resemble those of protostellar objects like W33 A, which also exhibit a band at 6.8 micrometers.

  4. Non-thermal 10 micrometers CO2 emission lines in the atmospheres of Mars and Venus

    NASA Technical Reports Server (NTRS)

    Johnson, M. A.

    1975-01-01

    Mechanisms for the excitation of strong 10 micrometer CO2 emission lines seen on Mars and Venus are examined. Line absorption of near IR solar flux directly by CO2 or by H2O with collisional transfer of energy to CO2 are proposed as likely excitation mechanisms. Altitudes for peak 10 micrometer emission are estimated to be near 80 km for Mars and 120 km for Venus.

  5. Acid dissolution experiments - Carbonates and the 6.8-micrometer bands in interplanetary dust particles

    NASA Astrophysics Data System (ADS)

    Sandford, S. A.

    1986-03-01

    A chemical dissolution experiment on an interplanetary dust particle (IDP) showed that carbonates, not acid-insoluble organic compounds, were responsible for virtually all the absorption at 6.8 micrometers seen in the infrared spectra of this particle. The IDP examined had an infrared spectrum characteristic of layer-lattice silicates and belongs to a class of IDP's whose spectra resemble those of protostellar objects like W33 A, which also exhibit a band at 6.8 micrometers.

  6. 1.5 to 1.7 micrometers LEDs (Light-Emitting Diode)

    NASA Astrophysics Data System (ADS)

    Olsen, G. H.; Channin, D. J.; Botez, D.; Enstrom, R. E.; Kowger, H. V.

    1984-09-01

    This report describes research undertaken to develop InGaAsP/InP Light Emitting Diodes (LEDs) that emit light in the 1.5 to 1.7 micrometer spectral regions. These devices were to be optimized for the best coupling to optical fibers and for high-speed operation. The double-barrel vapor-phase-epitaxy reactor was used to fabricate most of these devices. Both antireflective (AR) and six-layer dielectric-stack reflective (R) facet coatings were developed for 1.3 and 1.55 micrometer LEDs. Reflectivities as high as 95% (R) and as low as 3% (AR) were measured at both wavelengths. Measured coupled power from fiber-coupled InGaAsP/InP LEDs (50 micrometer core, 0.2 numerical aperature (NA), graded index (GI) fiber) includes values of 41 microwatts at 1.42 micrometers, 56 microwatts at 1.55 micrometers, and 11 microwatts at 1.65 micrometers.

  7. The effect of phosphorus and sulfur treatment on the surface properties of InP

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

    1988-01-01

    Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

  8. Minority-carrier lifetime in InP as a function of light bias

    NASA Technical Reports Server (NTRS)

    Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

    1995-01-01

    Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

  9. Effect of dislocations on properties of heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Curtis, H. B.; Brinker, D. J.; Jenkins, P.; Faur, M.

    1991-01-01

    The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

  10. Optical excitation of trapping states in Fe doped InP

    NASA Astrophysics Data System (ADS)

    Giessner, J.

    1983-06-01

    The knowledge that defect states affect the performance and speed of semiconductors is well known. Defect and trapping states are categorized according to their sex (hole or electron trap), energy in the gap and capture cross sections. The Deep Level Transient Spectroscopy (DLTS) technique that is useful for electrical pulsing, becomes increasingly profitable using optical pulsing. The optical pulsing was accomplished using a simple, but efficient, infrared light emitting diode (LED). The LED had the fortunate property that with decreasing temperature, the average energy output of the LED stayed about equal to the bandgap for the 3-5 semiconductor InP. Because of these findings, emphasis was put on Fe-doped Inp using LED excitation. These particular samples are being studied by Naval Research Labs (NRL) in connection with lasing that results from Fe transitions. Models were set up for both the p+n junction and Fe transitions to help explain experimental results obtained.

  11. Influence of growth conditions on the performance of InP nanowire solar cells

    NASA Astrophysics Data System (ADS)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A.; Plissard, Sebastien R.; Wang, Jia; Koenraad, Paul M.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2016-11-01

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  12. Effects of Be doping on InP nanowire growth mechanisms

    SciTech Connect

    Yee, R. J.; Gibson, S. J.; LaPierre, R. R.; Dubrovskii, V. G.

    2012-12-24

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  13. Effects of Be doping on InP nanowire growth mechanisms

    NASA Astrophysics Data System (ADS)

    Yee, R. J.; Gibson, S. J.; Dubrovskii, V. G.; LaPierre, R. R.

    2012-12-01

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below ˜1018 cm-3, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  14. Far field emission profile of pure wurtzite InP nanowires

    SciTech Connect

    Bulgarini, Gabriele Reimer, Michael E.; Zwiller, Val; Dalacu, Dan; Poole, Philip J.; Lapointe, Jean

    2014-11-10

    We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to the nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.

  15. The effect of phosphorus and sulfur treatment on the surface properties of InP

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

    1988-01-01

    Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

  16. Influence of growth conditions on the performance of InP nanowire solar cells.

    PubMed

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A; Plissard, Sebastien R; Wang, Jia; Koenraad, Paul M; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-11-11

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  17. Implementation of a quality control system for the Automatic Weather Stations Network from CPTEC/INPE

    NASA Astrophysics Data System (ADS)

    Ferreira, A.; Almeida, W. G.

    2007-05-01

    The observations from INPE's Automatic Weather Stations Network are available for free distribution in the CPTEC webpage just after its processing. Because the automated meteorological stations can report in a high temporal frequency and its quantity is growing, they will be more important over the time. To keep the quality of the distributed data and to help the network management it is needed a complex automated quality control system. To meet these objectives we installed in the CPTEC/INPE the quality control system from MADIS (Meteorological Assimilation Data Ingest System). A software developed by the Forecast Systems Laboratory, from NOAA (National Oceanic and Atmospheric Administration). In this paper we describe this QC system and the results.

  18. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    SciTech Connect

    Mannarino, Manuel E-mail: manuelmannarino@gmail.com; Chintala, Ravi; Vandervorst, Wilfried; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof

    2015-12-14

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III–V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III–V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  19. Minority carrier diffusion length and edge surface-recombination velocity in InP

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Bailey, Sheila G.

    1993-01-01

    A scanning electron microscope was used to obtain the electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure the edge surface-recombination velocity. These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (Donolato, 1982) to obtain the electron (minority carrier) diffusion length.

  20. Dopant Segregation in Earth- and Space-Grown InP Crystals

    NASA Astrophysics Data System (ADS)

    Danilewsky, Andreas Nikolaus; Okamoto, Yusuke; Benz, Klaus Werner; Nishinaga, Tatau

    1992-07-01

    Macro- and microsegregation of sulphur in InP crystals grown from In solution by the travelling heater method under microgravity and normal gravity are analyzed using spatially resolved photoluminescence. Whereas the macrosegregation in earth- as well as space-grown crystals is explained by conventional steady-state models based on the theory of Burton, Prim and Slichter (BPS), the microsegregation can only be understood in terms of the non-steady-state step exchange model.

  1. Optical Excitation of Trapping States in Fe Doped InP.

    DTIC Science & Technology

    1983-06-20

    cross sections. The Deep Level Transient Spectroscopy (DLTS) technique that is useful for electrical pulsing, becomes increasingly profitable using...intensity. %- °-4 ,o . . . . . . . 4’ 44 us Id- I-- 4 4W w wi UU 0. Li 28 The Technique Section III-I The technique of capacitance transient spectroscopy ...change of bandgap with temperature of InP. If one compares that data to the spectra data of the high output infarred , LED, it appears as if they

  2. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Mannarino, Manuel; Chintala, Ravi; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof; Vandervorst, Wilfried

    2015-12-01

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  3. W-Band InP Wideband MMIC LNA with 30K Noise Temperature

    NASA Technical Reports Server (NTRS)

    Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

    2000-01-01

    This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

  4. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  5. The Facility for 500 MeV Plasma Wake-Field Acceleration Experiments at Budker INP

    SciTech Connect

    Petrenko, A. V.; Lotov, K. V.; Logatchov, P. V.; Burdakov, A. V.

    2010-11-04

    The experimental PWFA facility currently under construction at the Budker INP is described. The objective is to use electron and positron beams extracted from the VEPP-5 damping ring in PWFA experiments. Due to longitudinal beam compression many PWFA schemes including the efficient blowout regime as well as multibunch regime can be studied. The simulations of beam dynamics in the facility are presented. Also we propose a simple technique for longitudinal beam slicing using dipole kickers and collimator in the damping ring.

  6. On-orbit results of the LIPS 3/InP homojunction solar cell experiment

    NASA Technical Reports Server (NTRS)

    Brinker, David J.

    1989-01-01

    The flight performance of the NASA indium phosphide homojunction cell module on the LIPS 3 satellite is presented. The experimental objectivewas to measure the InP cell performance in the natural radiation environment in a circular 1100 km altitude orbit inclined 60 degrees. Flight data for the first year is close to expected values. No degradation in the short-circuit current is seen. Details of cell structure and flight module design are discussed.

  7. The INPE handouts to the 6th LANDSAT Technical Working Group (LTWG) Meeting

    NASA Technical Reports Server (NTRS)

    Debarrosaguirre, J. L. (Principal Investigator); Parada, L. E. M.; Depaulapereira, S.

    1984-01-01

    LANDSAT receiving and processing system in its present configuration and status are described, as well as the experience already obtained with LANDSATs 4 and 5. The revised table of station plans for TM reception and products and of implementation schedule for data formats employing superstructure conventions is updated. Standardization of the worldwide reference systems is proposed. The INPE preliminary TM products price list is included. A TM image received and processed is shown to illustrate the appearance of the products offered.

  8. Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

    NASA Astrophysics Data System (ADS)

    Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

    2017-04-01

    Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

  9. III-V Solar Cells Based on a Lattice Parameter near that of InP

    NASA Astrophysics Data System (ADS)

    O'Mahony, Donagh; Mathews, Ian; Gocalinska, Agnieszka; Pelucchi, Emanuele; Thomas, Kevin; Morrison, Alan P.; Corbett, Brian

    2014-08-01

    Multi-junction cells based on a lattice constant of 5.816 Å using InAlAs - InGaAsP - InGaAs alloys can theoretically outperform those based on the GaAs lattice parameter by 3%. This lattice constant is close to that of InP (5.86 Å) but ultimately requires growth on a lower cost substrate such as Ge or Si for cost effectiveness. This paper presents an overview of our group's progress on the development of the essential sub-elements of this novel configuration, namely: (i) single-junction In0.52Al0.48As and In0.53Ga0.47As solar cells lattice matched to InP substrates with measured 1-Sun PV efficiencies of 13.8% and 9.3% respectively, (ii) a compositionally-graded InxGa1-xAs/InP metamorphic buffer layer (MBL) that alters the lattice constant from 5.65 Å (GaAs) to 5.87 Å (InP) and (iii) the growth of In0.52Al0.48As and In0.53Ga0.47As single junction cells on GaAs substrates.

  10. Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

    NASA Astrophysics Data System (ADS)

    Sun, Yun; Liu, Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.

    2003-01-01

    The chemical cleaning of indium phosphide (InP),(100) surfaces is studied systematically by using photoemission electron spectroscopy. In order to achieve the necessary surface sensitivity and spectral resolution, synchrotron radiation with photon energies ranging from 60 to 600 eV are used to study the indium 4d, phosphorus 2p, carbon 1s, and oxygen 1s core levels, and the valence band. Typical H2SO4:H2O2:H2O solutions used to etch GaAs(100) surfaces are applied to InP(100) surfaces. It is found that the resulting surface species are significantly different from those found on GaAs(100) surfaces and that a second chemical cleaning step using a strong acid is required to remove residual surface oxide. This two-step cleaning process leaves the surface oxide free and with approximately 0.4 ML of elemental phosphorus, which is removed by vacuum annealing. The carbon coverage is also reduced dramatically from approximately 1 to about 0.05 ML. The chemical reactions are investigated, the resulting InP surface species at different cleaning stages are determined, and the optimum cleaning procedure is presented.

  11. Improved nucleosome-positioning algorithm iNPS for accurate nucleosome positioning from sequencing data.

    PubMed

    Chen, Weizhong; Liu, Yi; Zhu, Shanshan; Green, Christopher D; Wei, Gang; Han, Jing-Dong Jackie

    2014-09-18

    Accurate determination of genome-wide nucleosome positioning can provide important insights into global gene regulation. Here, we describe the development of an improved nucleosome-positioning algorithm-iNPS-which achieves significantly better performance than the widely used NPS package. By determining nucleosome boundaries more precisely and merging or separating shoulder peaks based on local MNase-seq signals, iNPS can unambiguously detect 60% more nucleosomes. The detected nucleosomes display better nucleosome 'widths' and neighbouring centre-centre distance distributions, giving rise to sharper patterns and better phasing of average nucleosome profiles and higher consistency between independent data subsets. In addition to its unique advantage in classifying nucleosomes by shape to reveal their different biological properties, iNPS also achieves higher significance and lower false positive rates than previously published methods. The application of iNPS to T-cell activation data demonstrates a greater ability to facilitate detection of nucleosome repositioning, uncovering additional biological features underlying the activation process.

  12. Overview of satellite data in CPTEC/INPE G3DVar system

    NASA Astrophysics Data System (ADS)

    Silveira, B. B.; Goncalves, L.

    2013-05-01

    In the past 2 years, CPTEC/INPE has been implementing and testing its new data assimilation scheme to run with its Atmospheric Global Circulation Model (AGCM) named G3DVar (Global 3DVar). This new tri-dimensional variational scheme is based in the Gridpoint Statistical Interpolation (GSI) system, currently used operationally at NCEP's GFS model. G3DVar is now up and running operationally with assimilation cycle at every 6 hours in the AGCM/CPTEC/INPE, that has 45 Km of horizontal resolution and 64 levels in the vertical, producing forecasts 4 times a day for up to 168 hours. Part of the implementation (and further operational mode) consists in monitoring and evaluating routinely direct radiance data assimilation in the system. This work will present the current status and configuration of the radiative transfer model (CRTM - Community Radiative Transfer Model), quality control and bias correction used in the AGCM/CPTEC/INPE. The current radiances options include sensors like: AMSU-A, MHS, HIRS-4, AIRS, and IASI, interfaced by NCEP BUFR data format. This work will show a review of the configuration options with respect to satellite radiances input and how selected simulated brightness temperature compare against observations. A case study will present preliminary analysis of fields for OMF (observation minus background forecast), OMA (observation minus analysis) and OMR (observation minus a model free run) to assess the current system performance against observations. Variations in skill and number of observations assimilated over different regions are also discussed.

  13. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    SciTech Connect

    Dennis, Allison M.; Mangum, Benjamin D.; Piryatinski, Andrei; Park, Young-Shin; Htoon, Han; Hollingsworth, Jennifer A.

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  14. Transfer of InP thin films from engineered porous silicon substrates

    NASA Astrophysics Data System (ADS)

    Joshi, Monali B.; Goorsky, Mark S.

    2010-01-01

    Engineered composite substrates for thin film layer transfer applications are fabricated by incorporating the techniques of anodic etching, wafer bonding, and hydrogen-induced exfoliation. Silicon substrates (p /p+) are subjected to anodic electrochemical etching in 25% HF electrolyte to create double layer (40%/60% porosity) structures, which provide the means for subsequent mechanical transfer. Indium phosphide (InP) layers are transferred to the porous Si/Si substrate via silicon nitride interlayer bonding and hydrogen exfoliation. After chemical mechanical polishing, the transferred InP layers have a surface roughness of 0.6 nm and high crystalline quality. Metal-organic chemical vapor deposition on the composite substrate shows that residual ion implantation defects present in the InP template layer do not extend into epilayers, and the substrate maintains its high crystalline quality and mechanical integrity. Transfer of the epitaxial layers from the porous silicon handle wafer to a secondary substrate was achieved via fracture along the double porous layer interface, with no impact on the epilayer strain.

  15. Ab-initio Calculations of Electronic Properties of InP and GaP

    NASA Astrophysics Data System (ADS)

    Malozovsky, Yuriy; Franklin, Lashounda; Ekuma, Chinedu; Zhao, Guang-Lin; Bagayoko, Diola

    2013-03-01

    We present results from ab-initio, self consistent local density approximation (LDA) calculations of electronic and related properties of zinc blende indium and gallium phosphides (InP & GaP) We employed a local density approximation (LDA) potential and implemented the linear combination of atomic orbitals (LCAO) formalism. This implementation followed the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). This method searches for the optimal basis set that yields the minima of the occupied energies. This search entails methodically increasing the size of the basis set, up to the optimal one, and the accompanying enrichment of angular symmetry and of radial orbitals. Our calculated, direct band gap of 1.398 eV (1.40 eV) for InP, at the Γ point, is in excellent agreement with experimental values. We discuss our preliminary results for the indirect band gap, from Γ to X, of GaP. We also report calculated electron and hole effective masses for both InP and GaP and the total (DOS) and partial (pDOS) densities of states. This work was funded in part by the National Science Foundation and the Louisiana Board of Regents, through LASiGMA and LS-LAMP, [EPS-1003897, No. NSF (2010-15)-RII-SUBR, and HRD-1002541] and by the Louisiana Optical Network Initiative (LONI) at SUBR.

  16. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    NASA Astrophysics Data System (ADS)

    Steele, J. A.; Lewis, R. A.; Sirbu, L.; Enachi, M.; Tiginyanu, I. M.; Skuratov, V. A.

    2015-04-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index neff and compared to effective media approximations.

  17. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    SciTech Connect

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  18. PULSE SYNTHESIZING GENERATOR

    DOEpatents

    Kerns, Q.A.

    1963-08-01

    >An electronlc circuit for synthesizing electrical current pulses having very fast rise times includes several sinewave generators tuned to progressively higher harmonic frequencies with signal amplitudes and phases selectable according to the Fourier series of the waveform that is to be synthesized. Phase control is provided by periodically triggering the generators at precisely controlled times. The outputs of the generators are combined in a coaxial transmission line. Any frequency-dependent delays that occur in the transmission line can be readily compensated for so that the desired signal wave shape is obtained at the output of the line. (AEC)

  19. InP tunnel junction for InGaAs/InP tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  20. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

    SciTech Connect

    Kamarou, A.; Wesch, W.; Wendler, E.; Undisz, A.; Rettenmayr, M.

    2006-05-01

    Irradiation of single-crystalline InP with swift heavy ions (SHI's) causes the formation of ion tracks for certain irradiation temperatures if the electronic energy deposition exceeds a threshold value. With increasing SHI fluence, more and more ion tracks are formed, until a continuous amorphous layer is produced due to the multiple overlapping of the tracks at high ion fluences. Single-crystalline InP samples were irradiated either at liquid nitrogen temperature (LNT) or at room temperature (RT) with Kr, Xe, or Au ions with specific energies ranging from ca. 0.3 to 3.0 MeV/u. Afterwards, the samples were investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy in the plan-view and cross-section geometry. We show that the experimental data obtained can be qualitatively and quantitatively described on the basis of the inelastic thermal spike (TS) model, which was originally used only for metallic targets. The presented extension of the TS model on semiconductors covers mainly the very first stage of the energy transfer from SHI's (so-called 'ionization spikes'). Our results show that the extended TS model offers a self-consistent way to explain the influence of various irradiation conditions (ion mass, ion energy, irradiation temperature, etc.) on the ion track formation and damage accumulation in InP and, therefore, can make a contribution to a better understanding of the underlying mechanisms. Further, our results prejudice the amenity of a single value of the threshold electronic energy loss as a fundamental quantity that is commonly used for the description of track formation in solids irradiated with different ion species. There is no universal RT threshold for track formation in InP, but it is noticeably higher for lighter ions (12.0 and 14.8 keV/nm for RT irradiations with Au and Xe, respectively). Our experimental and simulation results support the idea that the formation of visible tracks requires a predamaging

  1. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

    NASA Astrophysics Data System (ADS)

    Kamarou, A.; Wesch, W.; Wendler, E.; Undisz, A.; Rettenmayr, M.

    2006-05-01

    Irradiation of single-crystalline InP with swift heavy ions (SHI’s) causes the formation of ion tracks for certain irradiation temperatures if the electronic energy deposition exceeds a threshold value. With increasing SHI fluence, more and more ion tracks are formed, until a continuous amorphous layer is produced due to the multiple overlapping of the tracks at high ion fluences. Single-crystalline InP samples were irradiated either at liquid nitrogen temperature (LNT) or at room temperature (RT) with Kr, Xe, or Au ions with specific energies ranging from ca. 0.3to3.0MeV/u . Afterwards, the samples were investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy in the plan-view and cross-section geometry. We show that the experimental data obtained can be qualitatively and quantitatively described on the basis of the inelastic thermal spike (TS) model, which was originally used only for metallic targets. The presented extension of the TS model on semiconductors covers mainly the very first stage of the energy transfer from SHI’s (so-called “ionization spikes”). Our results show that the extended TS model offers a self-consistent way to explain the influence of various irradiation conditions (ion mass, ion energy, irradiation temperature, etc.) on the ion track formation and damage accumulation in InP and, therefore, can make a contribution to a better understanding of the underlying mechanisms. Further, our results prejudice the amenity of a single value of the threshold electronic energy loss as a fundamental quantity that is commonly used for the description of track formation in solids irradiated with different ion species. There is no universal RT threshold for track formation in InP, but it is noticeably higher for lighter ions (12.0 and 14.8keV/nm for RT irradiations with Au and Xe, respectively). Our experimental and simulation results support the idea that the formation of visible tracks requires a

  2. InP tunnel junction for InGaAs/InP tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  3. The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program

    NASA Astrophysics Data System (ADS)

    Schuch, Nelson Jorge; Cupertino Durao, Otavio S.

    The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (CBP) and the results of the NANOSATC-BR1, the first Brazilian CubeSat launching, expected for 2014's first semester, are presented. The CBP consists of two CubeSats, NANOSATC-BR 1 (1U) & 2 (2U) and is expected operate in orbit for at least 12 months each, with capacity building in space science, engineering and computer sciences for the development of space technologies using CubeSats satellites. The INPE-UFSM’s CBP Cooperation is basically among: (i) the Southern Regional Space Research Center (CRS), from the Brazilian INPE/MCTI, where acts the Program's General Coordinator and Projects NANOSATC-BR 1 & 2 Manager, having technical collaboration and management of the Mission’s General Coordinator for Engineering and Space Technology at INPE’s Headquarter (HQ), in São José dos Campos, São Paulo; (ii) the Santa Maria Space Science Laboratory (LACESM/CT) from the Federal University of Santa Maria - (UFSM); (iii) the Santa Maria Design House (SMDH); (iv) the Graduate Program in Microelectronics from the Federal University of Rio Grande do Sul (MG/II/UFRGS); and (v) the Aeronautic Institute of Technology (ITA/DCTA/CA-MD). The INPE-UFSM’s CBP has the involvement of UFSM' undergraduate students and graduate students from: INPE/MCTI, MG/II/UFRGS and ITA/DCTA/CA-MD. The NANOSATC-BR 1 & 2 Projects Ground Stations (GS) capacity building operation with VHF/UHF band and S-band antennas, are described in two specific papers at this COSPAR-2014. This paper focuses on the development of NANOSATC-BR 1 & 2 and on the launching of NANOSATC-BR1. The Projects' concepts were developed to: i) monitor, in real time, the Geospace, the Ionosphere, the energetic particle precipitation and the disturbances at the Earth's Magnetosphere over the Brazilian Territory, and ii) the determination of their effects on regions such as the South American Magnetic Anomaly (SAMA) and the Brazilian sector of the

  4. Wisdom, Intelligence & Creativity Synthesized

    ERIC Educational Resources Information Center

    Sternberg, Robert J.

    2009-01-01

    How is it that smart administrators who want to do a good job often find themselves in situations that degenerate into confrontation and, ultimately, termination? In this article, the author discusses why in terms of a model of leadership--which he refers to it as WICS, an acronym for wisdom, intelligence and creativity synthesized. He describes…

  5. Wisdom, Intelligence & Creativity Synthesized

    ERIC Educational Resources Information Center

    Sternberg, Robert J.

    2009-01-01

    How is it that smart administrators who want to do a good job often find themselves in situations that degenerate into confrontation and, ultimately, termination? In this article, the author discusses why in terms of a model of leadership--which he refers to it as WICS, an acronym for wisdom, intelligence and creativity synthesized. He describes…

  6. The Journal Synthesizing Activity.

    ERIC Educational Resources Information Center

    Garber, Zev

    The journal synthesizing activity is intended to combine aspects of the formal essay with that of a diary. Activities associated with lecture topics are written up as short journal entries of approximately five typewritten pages and are turned in during the weekly class session at which the related topic is being discussed. The journal project…

  7. Synthesized night vision goggle

    NASA Astrophysics Data System (ADS)

    Zhou, Haixian

    2000-06-01

    A Synthesized Night Vision Goggle that will be described int his paper is a new type of night vision goggle with multiple functions. It consists of three parts: main observing system, picture--superimposed system (or Cathode Ray Tube system) and Charge-Coupled Device system.

  8. The 2.5-12 micrometers spectrum of comet Halley from the IKS-VEGA experiment

    NASA Technical Reports Server (NTRS)

    Combes, M.; Moroz, V. I.; Crovisier, J.; Encrenaz, T.; Bibring, J. P.; Grigoriev, A. V.; Sanko, N. F.; Coron, N.; Crifo, J. F.; Gispert, R.; Bockelee-Morvan, D.; Krasnopolsky, V. A.; Owen, T.; Emerich, C.; Lamarre, J. M.; Rocard, F.

    1988-01-01

    The infrared instrument IKS flown on board the VEGA space probes was designed for the detection of emission bands of parent molecules, and for a measurement of the size and temperature of the thermal emitting nuclear region. The instrument had three channels with cooled detectors: an "imaging channel" designed to modulate the signal of the nucleus and two spectroscopic channels operating at 2.5-5 and 6-12 micrometers, respectively, equipped with circular variable filters of resolving power approximately 50. This paper presents and discusses the results from the spectral channels. On VEGA 1, usable spectra were obtained at distances D from the comet nucleus ranging from 250,000 to 40,000 km corresponding to fields of view 4000 and 700 km in diameter, respectively. The important internal background signal caused by the instrument itself, which could not be cooled, had to be eliminated. Since no sky chopping was performed, we obtain difference spectra between the current spectrum and a reference spectrum with little or no cometary signal taken at the beginning of the observing sequence (D approximately 200,000 km). Final discrimination between cometary signal and instrumental background is achieved using their different time evolution, since the instrumental background is proportional to the slow temperature drift of the instrument, and the cometary signal due to parent molecules or dust grains is expected to vary in first order as D-1. The 2.5-5 micrometers IKS spectra definitely show strong narrow signals at 2.7 and 4.25 micrometers, attributed to the nu 3 vibrational bands of H2O and CO2, respectively, and a broader signal in the region 3.2-3.5 micrometers, which may be attributed to CH-bearing molecules. All these signals present the expected D-1 intensity variation. Weaker emission features at 3.6 and 4.7 micrometers could correspond to the nu 1 and nu 5 bands of H2CO and the (1 - 0) band of CO, respectively. Molecular production rates are derived from the

  9. Observational constraints on the atmospheres of Uranus and Neptune from new measurements near 10 micrometers

    SciTech Connect

    Tokunaga, A.T.; Caldwell, J.

    1983-10-01

    Uranus was detected at 10.3, 11.6 and 12.5 micrometers approximately 1 micrometer spectral bandpasses, with respective brightness temperatures of 74.0 + 0.9 or -1.1, 67.6 + 0.5 or -0.7, and 65.5 + 0.6 or -0.7 K and the first detection of Neptune at 10.3 micrometers with a brightness temperature of 77.5 + 0.7 or -0.9 K. We also detected Neptune at 11.36 micrometers with 2 percent spectral resolution at 81.0 + 0.8 or -0.9 K. The 10 micrometers continuous of both Uranus and Neptune may in part be due to reflected solar radiation as well as thermal emission. If all of the observed flux is reflected light, then the maximum geometric albedo of Uranus is 0.115 + or - 0.020, and that of Neptune is 0.229 + or - 0.043. In the context of previous observations in this region, the maximum stratospheric C2H6 mixing ratio is found to be 3 x 10 to the -8 power for Uranus and 3 x 10 to the -6 power for Neptune. A value for the maximum mixing ratio in the stratosphere of Neptune on the order of 1 - 0.004 appears to be consistent with the available data. Previously announced in STAR as N83-29155.

  10. Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

    NASA Astrophysics Data System (ADS)

    Le Goff, Florian; Mathiot, Daniel; Decobert, Jean; Le Goec, Jean-Pierre; Parillaud, Olivier; Reverchon, Jean-Luc

    2016-09-01

    In order to develop III-V based devices integrated directly above post-processed silicon wafers, low temperature diffusion of zinc in n-type InP and InGaAs is studied at compatible temperatures, below 425 oC. We particularly focus on the resulting surface degradation. Efficient Zn diffusion is obtained for InGaAs samples, where the surface remains mirror-like after thermal treatment. Conversely, no significant diffusion occurs in InP where the surface is deeply deteriorated. The stability study for InP under thermal annealing in various ambients allows us to rule out thermal dephosphorization as the main cause of the surface degradation. On the basis of experimental observations and thermodynamic considerations, it is suggested that InP degradation is linked to the direct interaction of Zn and P, inducing the formation of parasitic Zn x P2 alloys, which also hinders the efficient diffusion of Zn into the InP substrate.

  11. MOCVD Growth and Optical Characterization of Strain-Induced Quantum Dots with InP Island Stressors

    SciTech Connect

    Hanna, M. C.; Lu, Z. H.; Cahill, A. F.; Heben, M. J.; Nozik, A. J.

    1997-01-01

    Coherent InP islands, grown by low pressure metal organic chemical vapor deposition (MOCVD), were used to produce quantum dots by strain confinement. Lateral confinement of carriers in a GaAs/AlGaAs quantum well located near the surface was obtained from the inhomogeneous strain produced by the InP islands. The evolution of the InP islands on Al0.3Ga0.7As surfaces with increasing InP coverage at different growth temperatures and substrate orientations was studied using atomic force microscopy. Under certain growth conditions, a fairly uniform distribution of coherent InP islands was obtained which had an average apparent diameter of 140 nm with a standard deviation of 12.2 nm and height of 19.5 {+-} 1.1 nm. Lateral confinement depths up to 100 meV were obtained when using the islands as stressors. Photoluminescence from ensembles of the strain-induced dots exhibit peaks, narrow line widths (16 meV) and high efficiency up to room temperature.

  12. Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1

    PubMed Central

    Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

    2015-01-01

    The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. PMID:25828351

  13. High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

    NASA Astrophysics Data System (ADS)

    Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

    This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

  14. Observations of far-infrared fine structure lines: o III88.35 micrometer and oI 63.2 micrometer

    NASA Technical Reports Server (NTRS)

    Storey, J. W. V.; Watson, D. M.; Townes, C. H.

    1979-01-01

    Observations of the O III 88.35 micrometer line and the O I63.2 micrometer were made with a far infrared spectrometer. The sources M17, NGC 7538, and W51 were mapped in the O III line with 1 arc minute resolution and the emission is found to be quite widespread. In all cases the peak of the emission coincides with the maximum radio continuum. The far infrared continuum was mapped simultaneously and in M17, NGC 7538, and W51 the continuum peak is found to be distinct from the center of ionization. The O III line was also detected in W3, W49, and in a number of positions in the Orion nebula. Upper limits were obtained on NGS 7027, NGC 6572, DR21, G29.9-0.0 and M82. The 63.2 micrometer O I line was detected in M17, M42, and marginally in DR21. A partial map of M42 in this line shows that most of the emission observed arises from the Trapezium and from the bright optical bar to the southeast.

  15. On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography.

    PubMed

    Gregusová, D; Martaus, J; Fedor, J; Kúdela, R; Kostic, I; Cambel, V

    2009-07-01

    We developed a technology of sub-micrometer Hall probes for future application in scanning hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes of approximately 9-mum dimensions are prepared on the top of high-aspect-ratio GaAs pyramids with an InGaP/AlGaAs/GaAs active layer using wet-chemical etching and non-planar lithography. Then we show that the active area of planar Hall probes can be downsized to sub-micrometer dimensions by local anodic oxidation technique using an atomic force microscope. Such planar probes are tested and their noise and magnetic field sensitivity are evaluated. Finally, the two technologies are combined to fabricate sub-micrometer Hall probes on the top of high-aspect ratio mesa for future SHPM and MFM techniques.

  16. A 2.7 Micrometer Feature and Other Spectral Signatures of Asteroid 951 Gaspra

    NASA Astrophysics Data System (ADS)

    Granahan, J. C.

    2011-12-01

    The NASA Galileo spacecraft observed asteroid 951 Gaspra on October 29, 1991 with the Near Infrared Mapping Spectrometer (NIMS) at wavelengths ranging from 0.7 - 5.2 micrometers [Carlson et al., 1992]. Work is being conducted to produce a radiance calibrated spectral image of a 17 channel, 1.3 km per pixel NIMS observation of 951 Gaspra for the NASA Planetary Data System (PDS). Analysis [Granahan, 2011] of this S asteroid data has yielded a detection of a 2.7 micrometer absorption feature in all of the observed surface pixels of this data set. Also measured [Granahan, 2011] were groups of spectra that possessed different band centers near 1.0 micrometers and band depths at 2.0 micrometers due to the minerals olivine and pyroxene. The 2.7 micrometer absorption feature has its strongest absorption within Yeates Regio. Yeates Regio is one of 951 Gaspra's basins [Veverka et al., 1994]. The absorption is weakest in the vicinity of the asteroid's ridges. A material that has an absorption at 2.7 micrometers is structural hydroxyl (OH). The carbonaceous chondrite meteorite Murchison contains structural hydroxyl that creates such a spectral feature [Rivkin et al., 2002]. It has also been observed in the spectra of montmorrilonite [McAdam and Hibbitts, 2011]. Updated measurements of olivine and pyroxene spectral bands were also conducted for this radiance data of 951 Gaspra. Two groups of spectra were observed to be differentiated by spectral band centers measured at 0.99 and 1.05 micrometers with corresponding differences of band depth around 2.0 micrometers. The 0.99 micrometer group of spectra possesses the larger 2.0 micrometer band depth. These families of spectra correspond to those of SI (1.05 micrometer group) and SIII (0.99 micrometer group) classes [Gaffey et al., 1993] of the S asteroids. They are distinct from ordinary chondrite meteorites and imply the occurrence of differentiation on 951 Gaspra. This 17 channel radiance spectral image is being packaged as a

  17. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    SciTech Connect

    Pettinari, G.; Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Patanè, A.; Polimeni, A.; Capizzi, M.

    2013-12-09

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  18. Wideband 1.064 micrometer detector evaluation. [for application to space laser communication systems

    NASA Technical Reports Server (NTRS)

    Green, S. I.

    1977-01-01

    Several types of communications detectors for use in a 400 Mbps 1.064 micrometer laser communication system were evaluated and characterized. The communication system Bit Error Rate (BER) performance was measured, and test results for the best detector of each type are summarized. The complete BER curves are presented. The 400 Mbps 1.064 micrometer communication system receiver test bed is described. The best performance levels which can be achieved by focusing the signal to diffraction limited spots on the photosensitive area are cited.

  19. The Herschel ATLAS: Evolution of the 250 Micrometer Luminosity Function Out to z = 0.5

    NASA Technical Reports Server (NTRS)

    Dye, S.; Dunne, L.; Eales, S.; Smith, D. J. B.; Amblard, A.; Auld, R.; Baes, M.; Baldry, I. K.; Bamford, S.; Blain, A. W.; Bonfield, D. G.; Bremer, M.; Burgarella, D.; Buttiglione, S.; Cameron, E.; Cava, A.; Clements, D. L.; Cooray, A.; Croom, S.; Dariush, A.; de Zotti, G.; Driver, S.; Dunlop, J. S.; Frayer, D.; Leeuw, L.

    2010-01-01

    We have determined the luminosity function of 250 micrometer-selected galaxies detected in the approximately equal to 14 deg(sup 2) science demonstration region of the Herschel-ATLAS project out to a redshift of z = 0.5. Our findings very clearly show that the luminosity function evolves steadily out to this redshift. By selecting a sub-group of sources within a fixed luminosity interval where incompleteness effects are minimal, we have measured a smooth increase in the comoving 250 micrometer luminosity density out to z = 0.2 where it is 3.6(sup +1.4) (sub -0.9) times higher than the local value.

  20. Hydrothermal synthesis of micrometer sized HgMoO4 flowers formed by nanorods

    NASA Astrophysics Data System (ADS)

    Jia, Run-Ping; Zhang, Ying-Qiang

    2010-10-01

    Micrometer sized HgMoO4 flowers formed by nanorods were prepared by a selected hydrothermal method using a mixture of ethanol and water as a reaction medium, which were characterized by scanning electron microscopy, X-ray diffractometer (XRD), FT-IR spectrometry, photoluminescence spectrometry, and UV-visible spectrometry. Results indicated that the micrometer sized flowers consisted of mercury molybdate nanorods, and the monoclinic wolframite-type structure of the flowers was confirmed by both XRD and FT-IR spectrometry. A blue shift of the photoluminescence peaks and a broadening of XRD peaks were observed, which increased with ethanol fraction in the reaction medium.

  1. Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface

    NASA Astrophysics Data System (ADS)

    Woo, R. L.; Das, U.; Cheng, S. F.; Chen, G.; Raghavachari, K.; Hicks, R. F.

    2006-11-01

    Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface at 25 °C have been studied by internal reflection infrared spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. Both molecules form a dative bond to the empty dangling bonds on the In-P heterodimers and the second-layer In-In dimers and vibrate symmetrically at 2319 (2315) and 2285 (2281) cm -1 and asymmetrically at 2339 (2339) and 2327 (2323) cm -1. A fraction of these species dissociate into adsorbed PH 2 with the hydrogen and tertiarybutyl ligands transferring to nearby phosphorus sites. The calculated energy barriers for desorption (<11 kcal/mol) of these molecules is less than that for dissociation (>17 kcal/mol) and explains their low sticking probabilities at elevated temperatures under InP growth conditions.

  2. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    DOE PAGES

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

    2014-09-25

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%.

  3. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    PubMed Central

    2015-01-01

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

  4. Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

    NASA Astrophysics Data System (ADS)

    Mavel, Amaury; Chauvin, Nicolas; Regreny, Philippe; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel

    2017-01-01

    The nucleation and the structural and optical properties of InP nanowires (NWs) grown on Si(111) by molecular beam epitaxy using the vapor-liquid-solid method with gold-indium droplets as catalyst are investigated as a function of the temperature of the formation of the catalyst droplets and of the NW growth time. It is highlighted a complex behavior of the gold-indium catalyst droplets depending on the temperature. It is then shown than an InP pyramid-like pedestal is formed prior to the NW growth. When the temperature of formation of the catalyst droplets is lower than 550 °C, almost only vertically standing pure wurtzite InP NWs are grown on Si(111).

  5. The Dependence of the Oxidation Enhancement of InP(100) Surface on the Coverage of the Adsorbed Cs

    SciTech Connect

    Sun, Yun

    2010-06-07

    We report the oxidation of the InP(100) surface promoted by adsorbed Cs by synchrotron radiation photoemission. Oxygen exposure causes reduction of the charge transferred to the InP substrate from Cs and the growth of indium oxide and phosphorous oxide. The oxide growth displays a clear dependence on the Cs coverage. The oxidation of phosphorous is negligible up to 1000 L of O{sub 2} exposure when the Cs coverage is less than half a monolayer (ML), but the formation of the second half monolayer of Cs greatly accelerates the oxidation. This different enhancement of the InP oxidation by the first and the second half monolayer of Cs is due to the double layer structure of the adsorbed Cs atoms, and consequently the higher 6s electron density in the Cs atoms when Cs coverage is larger than 0.5 ML.

  6. InP by Planar Reactive Deposition and GaAs by Low Pressure Metal Organic Chemical Vapor Deposition.

    DTIC Science & Technology

    1981-02-01

    This inter- pretation is consistent with the fact that In2S3 is quite stable,(L7,18) whereas Cd2P 3 is quite volatile. (19) InP did not form until the...hypothesis regarding InP grain boundary passivation. Besides InP and CdS, the compounds Cd 2P3 , CdIn 2 S4 (Ref. 20) and (CdS)3x - ( In2S3 ).x (Ref. 18...PROCESSING: 2HRSAT425 C CdS +,(BARS) 1 GLASS SIDE VIEW I n (S)~,I (DOTS)~ (BARS) In2S3 (DOTS) (Cd) Figure 6. Scanning electron microscope (left) and

  7. Enhanced monolayer MoS{sub 2}/InP heterostructure solar cells by graphene quantum dots

    SciTech Connect

    Wang, Peng; Lin, Shisheng Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang; Ding, Guqiao

    2016-04-18

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS{sub 2}, which results in n-type doping of MoS{sub 2}. The doping effect increases the barrier height at the MoS{sub 2}/InP heterojunction, thus the averaged power conversion efficiency of MoS{sub 2}/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS{sub 2} based heterostructure solar cells.

  8. Electronic properties of InP (001)/HfO{sub 2} (001) interface: Band offsets and oxygen dependence

    SciTech Connect

    KC, Santosh; Dong, Hong; Longo, Roberto C.; Xiong, Ka; Wang, Weichao; Wallace, Robert M.; Cho, Kyeongjae

    2014-01-14

    Using ab-initio methods, atomic structures and electronic properties of InP (001)/HfO{sub 2} (001) interface are studied within the framework of density functional theory. We examine the InP/HfO{sub 2} model interface electronic structures under varying oxidation conditions. The effects of indium and phosphorous concentrations on interfacial bonding, defect states, band offsets, and the thermodynamic stability at the interface are also investigated. The origin of interfacial gap states in InP (001)/HfO{sub 2} (001) interface are proposed, mainly from the P-rich oxides, which is validated by our experimental work. This highlights the importance of surface passivation prior to high-κ deposition based on the in situ spectroscopic results of atomic layer deposition of HfO{sub 2} on InP.

  9. Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP. [organometallic vapor phase epitaxy

    NASA Technical Reports Server (NTRS)

    Larsen, C. A.; Buchan, N. I.; Stringfellow, G. B.

    1987-01-01

    The mechanism of PH3 decomposition was studied by using D2 as a carrier gas and analyzing the reaction products with a mass spectrometer. The effects of InP and silica surfaces were investigated. The only gaseous product below 600 C is H2. Since any gas-phase H atoms would produce HD, the reaction occurs entirely on the surface. The slow step is the unimolecular removal of the first hydrogen atom, with an activation energy of 36.0 kcal/mole on InP surfaces. The reaction on InP is first-order for PH3 concentrations as high as 15 percent, so the surface is not saturated at those conditions. When trimethylindium (TMIn) is added to the gas mixture, the mechanism changes dramatically, probably proceeding via an unstable intermediate adduct of TMIn and PH3 which eliminates CH4 upon formation. This concerted reaction lowers the pyrolysis temperatures of both PH3 and TMIn.

  10. Correlation of electron and proton irradiation-induced damage in InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.; Burke, Edward A.

    1995-01-01

    When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.

  11. Progress in p(+)n InP solar cells fabricated by thermal diffusion

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.; Weinberg, I.; Vargas, C.; Faur, Mircea; Faur, Maria; Goradia, C.; Goradia, M.; Fatemi, N. S.

    1993-01-01

    The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.

  12. Synthesis and properties of ultra-long InP nanowires on glass

    NASA Astrophysics Data System (ADS)

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-01

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ˜250 μm) InP NWs, with an exceptionally high growth rate of ˜25 μm min-1, were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  13. Status of diffused junction p+n InP solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  14. Improving INPE'S balloon ground facilities for operation of the protoMIRAX experiment

    NASA Astrophysics Data System (ADS)

    Mattiello-Francisco, F.; Rinke, E.; Fernandes, J. O.; Cardoso, L.; Cardoso, P.; Braga, J.

    2014-10-01

    The system requirements for reusing the scientific balloon ground facilities available at INPE were a challenge to the ground system engineers involved in the protoMIRAX X-ray astronomy experiment. A significant effort on software updating was required for the balloon ground station. Considering that protoMIRAX is a pathfinder for the MIRAX satellite mission, a ground infrastructure compatible with INPE's satellite operation approach would be useful and highly recommended to control and monitor the experiment during the balloon flights. This approach will make use of the SATellite Control System (SATCS), a software-based architecture developed at INPE for satellite commanding and monitoring. SATCS complies with particular operational requirements of different satellites by using several customized object-oriented software elements and frameworks. We present the ground solution designed for protoMIRAX operation, the Control and Reception System (CRS). A new server computer, properly configured with Ethernet, has extended the existing ground station facilities with switch, converters and new software (OPS/SERVER) in order to support the available uplink and downlink channels being mapped to TCP/IP gateways required by SATCS. Currently, the CRS development is customizing the SATCS for the kernel functions of protoMIRAX command and telemetry processing. Design-patterns, component-based libraries and metadata are widely used in the SATCS in order to extend the frameworks to address the Packet Utilization Standard (PUS) for ground-balloon communication, in compliance with the services provided by the data handling computer onboard the protoMIRAX balloon.

  15. Temperature dependence of the electron spin g factor in CdTe and InP

    NASA Astrophysics Data System (ADS)

    Pfeffer, Pawel; Zawadzki, Wlodek

    2012-04-01

    Temperature dependence of the electron spin g factors in bulk CdTe and InP is calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P.p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated by summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of a magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiments in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of band-edge g values in the two materials. Good agreement between the theory and experiments strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

  16. Synthesis and properties of ultra-long InP nanowires on glass.

    PubMed

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-16

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min(-1), were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  17. Reflectance reduction of InP wafers after high-temperature annealing.

    PubMed

    Semyonov, Oleg G; Subashiev, Arsen V; Shabalov, Alexander; Lifshitz, Nadia; Chen, Zhichao; Hosoda, Takashi; Luryi, Serge

    2012-08-01

    Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.

  18. Solar cells in bulk InP using an open tube diffusion process

    NASA Technical Reports Server (NTRS)

    Parat, K. K.; Bothra, S.; Borrego, J. M.; Ghandhi, S. K.

    1987-01-01

    A simple open tube diffusion technique for the fabrication of n+p junction solar cells is described. Large area (greater than 0.25 square cm) solar cells have been made by this process with a photovoltaic conversion efficiency of 15.2 percent under simulated AMO illumination. An ideality factor is 1.04 and a saturation current density of 9.6 times 10 to the minus 16th power A/square cm have been observed for these cells. These are the lowest (best) values reported to date for diffused structures in bulk InP.

  19. The plasmonic properties of argon cluster-bombarded InP surfaces

    NASA Astrophysics Data System (ADS)

    Murdoch, B. J.; Barlow, A. J.; Fletcher, I. W.; Cumpson, P. J.

    2017-08-01

    Gas cluster ion beam sputtering has been used to study the self-organising behaviour of In metallic nanoparticles produced by preferential sputtering of phosphorus atoms in InP. Discrete plasmonic In nanoparticles are observed at the earliest stages of surface modification. The surfaces have been investigated in situ by reflection electron energy loss spectroscopy, Auger electron spectroscopy, and photoluminescence spectroscopy. By altering the excitation intensity, we observe alterations of the photoluminescence spectrum that are attributed to photoconductive-coupling between In nanoparticles. The devices presented are suitable for visible wavelength surface enhanced Raman spectroscopy and, potentially, offer a route to active all-optical switches.

  20. A new high efficiency InP acousto-optic device for IR wavelengths

    NASA Astrophysics Data System (ADS)

    Soos, Jolanta I.; Rosemeier, Ronald G.; Rosenbaum, Joel

    1990-09-01

    InP acoustooptic Bragg cells which are IR-transparent in the 1-10 micron bandpass have a center frequency in the 200-600 MHz range, and a diffraction efficiency of 40-60 percent, on the basis of 1-W RF driving power. These devices are anticipated to be ideal in such applications as fiber-optic modulators, IR scanners, deflectors, and HF mode-lockers. In the course of fabrication, the photoelastic constant p44 has been defined; using other crystallographic configurations, such photoelastic constants as p11 and p12 are expected to emerge.

  1. Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Shamir, N.; Ritter, D.; Cytermann, C.

    2002-06-01

    A tunnel diode collector contact to InP based PNP heterojunction bipolar transistors (HBTs) is suggested and demonstrated. The additional heavily doped n-type contact layer replaces the thick p-type contact layer required in conventional structures. The thermal and electrical properties of the collector contact layer thus become similar to those of NPN HBTs. A secondary ion mass spectroscopy study explores the maximum tin doping level that can be obtained in the base. Finally, the temperature dependence of the current gain is presented and interpreted.

  2. Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

    NASA Astrophysics Data System (ADS)

    Chauvin, N.; Hadj Alouane, M. H.; Anufriev, R.; Khmissi, H.; Naji, K.; Patriarche, G.; Bru-Chevallier, C.; Gendry, M.

    2012-01-01

    InP nanowires grown on silicon substrate are investigated using time-resolved spectroscopy. A strong modification of the exciton lifetime is observed (from 0.11 to 1.2 ns) when the growth temperature is increased from 340 °C to 460 °C. This strong dependence is not related to the density of zinc-blende insertions in the wurtzite nanowires or to the wurtzite exciton linewidth. The excitation power dependence of the lifetime and linewidth is investigated, and these results allow us to interpret the growth temperature dependence on the lifetime as a consequence of the reduction of the surface recombination velocity with the growth temperature.

  3. Shallow donor-like impurity states in magnetic field in n-type InP

    NASA Astrophysics Data System (ADS)

    Aulombard, R. L.; Kadri, A.; Zitouni, K.; Konczewicz, L.

    1987-02-01

    We present the evidence of hydrogenic behavior of shallow donor-like impurity states in n-type InP (8.5 × 10 15 cm -3 ≲ N d-N a ≲ 6.2 × 10 16 cm -3) from magnetic freeze out experiments at magnetic fields up to 18 T. This occurs at T ≳ 10 K and at a magnetic field sufficiently high to induce a metal-insulator transition. At high fields, the reduction of the binding energy with respect to the hydrogenic model of LARSEN can be well accounted for by the increasing overlap of the impurity wave functions as the donor concentration increases.

  4. InP photonic integrated externally injected gain switched optical frequency comb.

    PubMed

    Gutierrez Pascual, M Deseada; Vujicic, Vidak; Braddell, Jules; Smyth, Frank; Anandarajah, Prince M; Barry, Liam P

    2017-02-01

    We report on an InP photonic integrated circuit for the generation of an externally injected gain switched optical frequency comb. The device is fully characterized and generates a comb with frequency spacing ranging from 6 to 10 GHz, good noise properties that include relative intensity noise of <-130  dB/Hz and linewidth of 1.5 MHz, and a high phase correlation between comb lines. These characteristics, in conjunction with the compactness and cost efficiency of the integrated device, demonstrate the quality of the resultant comb source for numerous applications.

  5. Integrated amplifiers using fully ion-implanted InP JFET's with high transconductance

    NASA Astrophysics Data System (ADS)

    Kim, Sung J.; Guth, G.; Vella-Coleiro, G. P.

    1988-06-01

    Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 microns and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.

  6. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    PubMed Central

    2011-01-01

    Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content. PMID:21711912

  7. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  8. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  9. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  10. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  11. Explaining Synthesized Software

    NASA Technical Reports Server (NTRS)

    VanBaalen, Jeffrey; Robinson, Peter; Lowry, Michael; Pressburger, Thomas; Lau, Sonie (Technical Monitor)

    1998-01-01

    Motivated by NASA's need for high-assurance software, NASA Ames' Amphion project has developed a generic program generation system based on deductive synthesis. Amphion has a number of advantages, such as the ability to develop a new synthesis system simply by writing a declarative domain theory. However, as a practical matter, the validation of the domain theory for such a system is problematic because the link between generated programs and the domain theory is complex. As a result, when generated programs do not behave as expected, it is difficult to isolate the cause, whether it be an incorrect problem specification or an error in the domain theory. This paper describes a tool we are developing that provides formal traceability between specifications and generated code for deductive synthesis systems. It is based on extensive instrumentation of the refutation-based theorem prover used to synthesize programs. It takes augmented proof structures and abstracts them to provide explanations of the relation between a specification, a domain theory, and synthesized code. In generating these explanations, the tool exploits the structure of Amphion domain theories, so the end user is not confronted with the intricacies of raw proof traces. This tool is crucial for the validation of domain theories as well as being important in everyday use of the code synthesis system. It plays an important role in validation because when generated programs exhibit incorrect behavior, it provides the links that can be traced to identify errors in specifications or domain theory. It plays an important role in the everyday use of the synthesis system by explaining to users what parts of a specification or of the domain theory contribute to what pieces of a generated program. Comments are inserted into the synthesized code that document these explanations.

  12. Synthesizing folded band chaos

    NASA Astrophysics Data System (ADS)

    Corron, Ned J.; Hayes, Scott T.; Pethel, Shawn D.; Blakely, Jonathan N.

    2007-04-01

    A randomly driven linear filter that synthesizes Lorenz-like, reverse-time chaos is shown also to produce Rössler-like folded band wave forms when driven using a different encoding of the random source. The relationship between the topological entropy of the random source, dissipation in the linear filter, and the positive Lyapunov exponent for the reverse-time wave form is exposed. The two drive encodings are viewed as grammar restrictions on a more general encoding that produces a chaotic superset encompassing both the Lorenz butterfly and Rössler folded band paradigms of nonlinear dynamics.

  13. Preparation of micrometer-sized polymer particles with control of initiator dissociation during soap-free emulsion polymerization.

    PubMed

    Nagao, Daisuke; Sakamoto, Tatsuro; Konno, Hiroyuki; Gu, Shunchao; Konno, Mikio

    2006-12-19

    A previously proposed method of soap-free emulsion polymerization employing an amphoteric initiator, 2,2'-azobis [N-(2-carboxyethyl)-2-methylpropionamidine] tetrahydrate (VA-057), was extended to synthesize micrometer-sized polystyrene particles with low polydispersity in an acidic region of pH from 3.3 to 4.6. A buffer system of CH3COOH/CH3COONa was used for the adjustment of pH, which was aimed at effective promotion of particle coagulation in early stage of the polymerization. In these experiments, CH3COOH concentration was varied from 20 to 360 mM at a CH3COONa concentration of 10 mM. Polymer particles with an average size of 1.8 microm and low polydispersity were obtained at the CH3COOH concentration of 40 mM for the concentrations of 1.1 M styrene monomer and 10 mM initiator. To more precisely control dispersion stability of particles, experiments in which pH was stepwisely changed during the polymerization were also carried out. This polymerization method could enhance the average size of particles to 2.2 microm while retaining the monodispersity of particles. Furthermore, combination of pH stepwise change and monomer addition during the polymerization could produce particles with an average size of 3.0 microm and low polydispersity.

  14. Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    NASA Astrophysics Data System (ADS)

    Yanase, Shougo; Sasakura, Hirotaka; Hara, Shinjiro; Motohisa, Junichi

    2017-04-01

    We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. InAsP quantum dots were embedded in these density-controlled InP NW arrays, and clear single-photon emission and exciton-biexciton cascaded emission were confirmed by excitation-dependent photoluminescence and photon correlation measurements.

  15. Study of CdS epitaxial films chemically deposited from aqueous solutions on InP single crystals

    SciTech Connect

    Froment, M.; Bernard, M.C.; Cortes, R.; Mokili, B.; Lincot, D.

    1995-08-01

    Epitaxial growth of cadmium sulfide on InP single crystals is achieved by chemical bath deposition (CBD) in ammonia solutions at near room temperature. A better understanding of the correlations between the deposition parameters (temperature, bath composition) and the epitaxial quality is obtained by using electron diffraction and transmission techniques, x-ray diffraction, in combination with Raman spectroscopy. They are supplemented by electrochemical impedance and photocurrent experiments which give information on energetic structures between InP and CBD-CdS. Direct relations between the substrate properties and the growth habits of the CdS film (hexagonal vs. cubic, epitaxial vs. polycrystalline) are found.

  16. Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires

    NASA Astrophysics Data System (ADS)

    Anufriev, Roman; Chauvin, Nicolas; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Bru-Chevallier, Catherine

    2012-08-01

    Wurtzite InP nanowires (NWs), transferred onto various substrates, were investigated by low temperature micro-photoluminescence. A clear PL emission shift, depending on the substrate, is observed and attributed to the substrate-induced strain, generated due to the difference in the thermal expansion coefficients of the InP NWs and the host-substrate during the sample cooling. Moreover, a blueshift of the PL emission peak is observed as the excitation power is increased. This effect, which is not observed on the as-grown sample, is thus a consequence of the host substrate and not an intrinsic property of the nanowires.

  17. Concepts for connectivity and interoperability of world space data networks: INPE proposal to CCSDS/Panel 3

    NASA Astrophysics Data System (ADS)

    Bergamini, E. W.

    1983-05-01

    Concepts are presented for an architectural end-to-end reference model based on the identification of classes of applications and products to be offered by services required to exchange data in operational support of space data systems. An Internetwork Transfer Frame (ITF) structure and basic concepts of a protocol are proposed for operational interconnection of data networks. The upward compatibility of these concepts with the higher layers of a standard data interchange structure (SDIS) model is also considered, based on INPE proposal to CCSDS/PANEL 2. Implementation aspects of the proposed model are also presented with respect to INPE's network.

  18. Synthesis of carbon nanotube-anatase TiO₂ sub-micrometer-sized sphere composite photocatalyst for synergistic degradation of gaseous styrene.

    PubMed

    An, Taicheng; Chen, Jiangyao; Nie, Xin; Li, Guiying; Zhang, Haimin; Liu, Xiaolu; Zhao, Huijun

    2012-11-01

    The carbon nanotube (CNT)-sub-micrometer-sized anatase TiO₂ sphere composite photocatalysts were synthesized by a facile one-step hydrothermal method using titanium tetrafluoride as titanium source and CNTs as structure regulator. Various technologies including X-ray diffraction, UV-visible absorption spectra, N₂ adsorption-desorption, scanning electron microscopy, and transmission electron microscopy were employed to characterize the structure properties of the prepared composite photocatalysts. The results indicated that the composite photocatalysts consisted of CNTs wrapping around the sub-micrometer-sized anatase TiO₂ spheres with controllable crystal facets and that the aggregated particles with average diameter ranged from 200 to 600 nm. The fabricated composite photocatalysts were used to degrade gaseous styrene in this work. As expected, a synergistic effect that remarkably enhancing the photocatalytic degradation efficiency of gaseous styrene by the prepared composite photocatalysts was observed in comparison with that the degradation efficiency using pure anatase TiO₂ and the adsorption of CNTs. Similar results were also confirmed in the decolorization of liquid methyl orange. Further investigation demonstrated that the synergistic effect in the photocatalytic activity was related to the structure of the sub-micrometer-sized anatase TiO₂ spheres and the significant roles of CNTs in the composite photocatalysts. By controlling the content of CNTs, the content of TiO₂ or the temperature during the hydrothermal synthesis process, anatase TiO₂ spheres with controllable crystallite size and dominant crystal facets such as {001}, {101}, or polycrystalline could be obtained, which was beneficial for the increase in the synergistic effect and further enhancement of the photocatalytic efficiencies.

  19. Method to pattern <10 micrometer conducting and passivating features on 3D substrates for implantable devices

    DOEpatents

    Tolosa, Vanessa; Pannu, Satinderpall S.; Sheth, Heeral; Tooker, Angela C.; Shah, Kedar G.

    2017-07-04

    An implantable device has a cylindrical base, at least one electrode on the cylindrical base, at least one electrically conducting lead on the cylindrical base connected to the electrode wherein the electrically conducting lead has a feature size of <10 micrometers. A protective coating on the cylindrical base covers the at least one electrically conducting lead.

  20. A meteorological distribution system for high-resolution terrestrial modeling (MicroMet)

    Treesearch

    Glen E. Liston; Kelly Elder

    2006-01-01

    An intermediate-complexity, quasi-physically based, meteorological model (MicroMet) has been developed to produce high-resolution (e.g., 30-m to 1-km horizontal grid increment) atmospheric forcings required to run spatially distributed terrestrial models over a wide variety of landscapes. The following eight variables, required to run most terrestrial models, are...

  1. Effects of Cloud Particles on Remote Sensing from Space in the 10-Micrometer Infrared Region.

    DTIC Science & Technology

    1977-01-01

    micrometer infrare d window , first by expanding the transmission , scatteri ng, and emission func ti ons i nto power series and then by i teration to obtain...exandria, VA 22 304 D i recto r, Systens R&D Service Federal Aviation Administration Commander ATTN : ARD -54 Frankford Arsenal 2100 Second Street, SW

  2. Nuclear Technology. Course 27: Metrology. Module 27-2, Fixed Gages, Dividers, Calipers, and Micrometers.

    ERIC Educational Resources Information Center

    Selleck, Ben; Espy, John

    This second in a series of eight modules for a course titled Metrology dscribes fixed gages, dividers, calipers, vernier and dial calipers, and micrometers. The module follows a typical format that includes the following sections: (l) introduction, (2) module prerequisites, (3) objectives, (4) notes to instructor/student, (5) subject matter, (6)…

  3. Efficient Single-Frequency Thulium Doped Fiber Laser Near 2-micrometers

    NASA Technical Reports Server (NTRS)

    Geng, Jihong; Wu, Jianfeng; Jiang, Shibin; Yu, Jirong

    2007-01-01

    We demonstrate highly efficient diode-pumped single-frequency fiber laser with 35% slope efficiency and 50mW output power operating near 2 micrometers, which generated from a 2-cm long piece of highly Tm(3+)-doped germanate glass fiber pumped at 800nm.

  4. Micrometer scale spacings between fibronectin nanodots regulate cell morphology and focal adhesions

    NASA Astrophysics Data System (ADS)

    Horzum, Utku; Ozdil, Berrin; Pesen-Okvur, Devrim

    2014-04-01

    Cell adhesion to extracellular matrix is an important process for both health and disease states. Surface protein patterns that are topographically flat, and do not introduce other chemical, topographical or rigidity related functionality and, more importantly, that mimic the organization of the in vivo extracellular matrix are desired. Previous work showed that vinculin and cytoskeletal organization are modulated by size and shape of surface nanopatterns. However, quantitative analysis on cell morphology and focal adhesions as a function of micrometer scale spacings of FN nanopatterns was absent. Here, electron beam lithography was used to pattern fibronectin nanodots with micrometer scale spacings on a K-casein background on indium tin oxide coated glass which, unlike silicon, is transparent and thus suitable for many light microscopy techniques. Exposure times were significantly reduced using the line exposure mode with micrometer scale step sizes. Micrometer scale spacings of 2, 4 and 8 μm between fibronectin nanodots proved to modulate cell adhesion through modification of cell area, focal adhesion number, size and circularity. Overall, cell behavior was shown to shift at the apparent threshold of 4 μm spacing. The findings presented here offer exciting new opportunities for cell biology research.

  5. FIB-TEM Anatomy of a Sub-Micrometer Impact Crater on a Hayabusa Grain

    NASA Astrophysics Data System (ADS)

    Harries, D.; Yakame, S.; Uesugi, M.; Langenhorst, F.

    2015-07-01

    We investigated Hayabusa grain RA-QD02-0265, which was found to contain a cluster of sub-micrometer-sized crater-like features. The cluster of craters is most likely due to secondary impacts of particles generated by an nearby (micro-)impact event.

  6. Nuclear Technology. Course 27: Metrology. Module 27-2, Fixed Gages, Dividers, Calipers, and Micrometers.

    ERIC Educational Resources Information Center

    Selleck, Ben; Espy, John

    This second in a series of eight modules for a course titled Metrology dscribes fixed gages, dividers, calipers, vernier and dial calipers, and micrometers. The module follows a typical format that includes the following sections: (l) introduction, (2) module prerequisites, (3) objectives, (4) notes to instructor/student, (5) subject matter, (6)…

  7. SYNTH: A spectrum synthesizer

    NASA Astrophysics Data System (ADS)

    Hensley, W. K.; McKinnon, A. D.; Miley, H. S.; Panisko, M. E.; Savard, R. M.

    1993-10-01

    A computer code has been written at the Pacific Northwest Laboratory (PNL) to synthesize the results of typical gamma ray spectroscopy experiments. The code, dubbed SYNTH, allows a user to specify physical characteristics of a gamma ray source, the quantity of the nuclides producing the radiation, the source-to-detector distance and the presence of absorbers, the type and size of the detector, and the electronic set up used to gather the data. In the process of specifying the parameters needed to synthesize a spectrum, several interesting intermediate results are produced, including a photopeak transmission function versus energy, a detector efficiency curve, and a weighted list of gamma and x rays produced from a set of nuclides. All of these intermediate results are available for graphical inspection and for printing. SYNTH runs on personal computers. It is menu driven and can be customized to user specifications. SYNTH contains robust support for coaxial germanium detectors and some support for sodium iodide detectors. SYNTH is not a finished product. A number of additional developments are planned. However, the existing code has been compared carefully to spectra obtained from National Institute for Standards and Technology (NIST) certified standards with very favorable results. Examples of the use of SYNTH and several spectral results are presented.

  8. Programmable electronic synthesized capacitance

    NASA Technical Reports Server (NTRS)

    Kleinberg, Leonard L. (Inventor)

    1987-01-01

    A predetermined and variable synthesized capacitance which may be incorporated into the resonant portion of an electronic oscillator for the purpose of tuning the oscillator comprises a programmable operational amplifier circuit. The operational amplifier circuit has its output connected to its inverting input, in a follower configuration, by a network which is low impedance at the operational frequency of the circuit. The output of the operational amplifier is also connected to the noninverting input by a capacitor. The noninverting input appears as a synthesized capacitance which may be varied with a variation in gain-bandwidth product of the operational amplifier circuit. The gain-bandwidth product may, in turn, be varied with a variation in input set current with a digital to analog converter whose output is varied with a command word. The output impedance of the circuit may also be varied by the output set current. This circuit may provide very small ranges in oscillator frequency with relatively large control voltages unaffected by noise.

  9. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOEpatents

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  10. Growth and characterization of epitaxial SrF2 on InP(100)

    NASA Technical Reports Server (NTRS)

    Sinharoy, S.; Hoffman, R. A.; Rieger, J. H.; Warner, J. D.; Bhasin, K. B.

    1986-01-01

    The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.

  11. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    NASA Astrophysics Data System (ADS)

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Renshaw, Christopher K.; Forrest, Stephen R.

    2010-09-01

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of ηp=14.4±0.4% and ηp=14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  12. Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

    NASA Technical Reports Server (NTRS)

    Bhusal, L.; Freundlich, A.

    2007-01-01

    Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

  13. Anomalous behaviour of dopants in atmospheric pressure MOVPE of InP

    NASA Astrophysics Data System (ADS)

    Cole, S.; Evans, J. S.; Harlow, M. J.; Nelson, A. W.; Wong, S.

    1988-12-01

    The doping level of p-type InP doped with Zn or Cd, incorporated into various structures, has been investigated as a function of the gaseous ambient to which the structure is exposed during cooling from typical MOVPE growth temperatures. It is found that the doping level is strongly dependent on this ambient. If AsH 3 is present the doping level is lower by up to an order of magnitude than if PH 3 is used, which in turn gives a doping level lower by up to a factor of two than H 2 alone. Both MOVPE grown epilayers and Czochralski grown bulk crystals have been studied and found to behave similarly. SIMS experiments show that this is due to electrical deactivation rather than loss of the dopant species itself. n-Type InP and n- or p-type GaAs do not appear to be affected. Significant quantities of atomic H are found in samples exposed to the hydrides during cooling, consistent with their pyrolysis being catalysed by the semiconductor surface. The anomalous doping level phenomena are discussed in terms of a model involving deactivation of the dopant by complex formation with H, as observed by Johnson et al. in GaAs exposed to a hydrogen plasma.

  14. Some fundamental aspects of profile etching at InP surfaces

    SciTech Connect

    Vermeir, I.E.; Gomes, W.P.; Van Daele, P.

    1995-09-01

    Etching profiles at mask edges on (100) InP are obtained in acidic FeCl{sub 3} containing solutions under uniform illumination and in iodic acid solutions in darkness. For both etching systems, the results of microscopic etching near mask edges are compared to the macroscopic etching behavior of individual crystallographic faces. In the case of photoetching by FeCl{sub 3}, a difference in profile shape is observed between p- and n-type samples, associated with the fact that the photoetching occurs by an electrochemical mechanism. At p-type samples, the slowest etching face [i.e., the (111) face] is revealed whereas at n-type, profiles with very rough bottoms are observed. A tentative interpretation for this phenomenon is proposed. No difference in profile shape is found between p- and n-type in the iodic acid solution, which operates through a chemical mechanism. An anisotropic microscopic etching behavior is however observed. A model, in which the presence of a thin oxide layer on the InP plays a crucial role, can explain this etching behavior.

  15. Interaction of atomic hydrogen with native oxides on InP(100)

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Houzay, F.; Moison, J. M.

    1992-05-01

    The (100) surface of InP covered with its native oxides has been exposed to increasing doses of atomic hydrogen and studied by surface-sensitive techniques. Carbon and oxygen coverages which cannot be desorbed by thermal cleaning can be completely removed at 300°C under atomic hydrogen. At this temperature, exposures to atomic hydrogen between 104 and 105 L of H2 remove the weakly bonded oxygen and carbon atoms. Exposures above 106 L lead to a surface-decomposition of InP evidenced by the decrease of the P2p/In4d intensity ration and the appearance of metallic indium. At room temperature, exposures to atomic hydrogen between 104 and 105 L desorb CO molecules and modify the nature of the native oxides. At higher exposures and up to 107 L of H2, the remaining oxide passivates the surface against the action of atomic hydrogen. These new results are discussed in relation with the cleaning action of hydrides on III-V compound surfaces.

  16. The effect of process conditions on the performance of epitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandi, S. K.

    1991-01-01

    Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.

  17. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    SciTech Connect

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

    2010-09-06

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of {eta}{sub p}=14.4{+-}0.4% and {eta}{sub p}=14.8{+-}0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  18. Growth of SiO 2 on InP substrate by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lei, Po Hsun; Yang, Chyi Da

    2010-04-01

    We have grown silicon dioxide (SiO 2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO 2 saturated hydrofluorosilicic acid (H 2SiF 6), 0.1 M boric acid (H 3BO 3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO 2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO 2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H 2O 2) that can regulate the concentration of OH - ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO 2 saturated H 2SiF 6 in treatment solution.

  19. Annealing of irradiated n+p InP buried homojunctions

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

    1994-01-01

    At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

  20. Adsorption and thermal stability of 1,4 benzenedimethanethiol on InP(110)

    NASA Astrophysics Data System (ADS)

    Alarcón, Leonardo Salazar; Cristina, Lucila J.; Jia, Juanjuan; Chen, Lin; Giglia, Angelo; Pasquali, Luca; Sánchez, Esteban A.; Esaulov, Vladimir A.; Grizzi, Oscar

    2017-10-01

    Self-assembly of dithiol molecules is of interest because these can be used as linkers between metallic or semiconductor entities and thus employed in molecular electronics and plasmonic applications, or for building complex heterostructures. Here we focus on dithiol self-assembly by evaporation in vacuum, a method that could circumvent the dithiol oxidation that can occur in solution. We present a high resolution X-ray photoelectron spectroscopy (XPS) and an ion scattering study of adsorption and desorption of 1,4-benzenedimethanethiol on InP(110) as a function of exposure and sample temperature. Results for InP are compared to those on Au(111) and found to differ due to formation of a thick BDMT layer at room temperature, resulting from extra molecules sticking on top of the self-assembled monolayer. This may play an adverse effect in some afore-mentioned applications as in molecular electronics. We furthermore study the evolution of the dithiol film with sample temperature and the elements remaining at the surface after annealing and delineate initial coverage dependent effects.

  1. Transport Properties of Thin Bismuth Films on InP (110) Surfaces by Scanning Tunneling Potentiometry

    NASA Astrophysics Data System (ADS)

    Feenstra, R. M.; Briner, B. G.; Chin, T. P.; Woodall, J. M.

    1996-03-01

    Charge transport in 20--30 Å thick Bi-films is studied by scanning tunneling potentiometry (STP) at room temperature. The Bi is deposited on cleaved InP(110) surfaces at temperatures near 140 K, yielding atomically flat films interspersed with 12 Å deep holes. The InP substrates contain conducting/insulating/conducting layers, which in cross-section are used to form contacts to the film, thus enabling lateral current densities as high as 8 × 10^6 A/cm^2 . Potential variations due to scattering of this lateral current is detected using STP, by locating the zero-crossing of current-voltage characteristics at each pixel in an image. Potential images reveal, on a coarse scale, a smooth ramp arising from the electric field due to phonon scattering in the film, from which an electron-phonon scattering length of >1000 Å is deduced. On a finer scale, potential steps 2--10 mV high are seen near surface holes and grain boundaries in the film. Detailed study of the ballistic scattering near the holes reveals a dipole shaped feature, which is identified as a residual resistivity dipole. *present address: Physics, Carnegie Mellon Univ., Pittsburgh PA 15213 **now at: Fritz-Haber-Institut, 14195 Berlin, briner@fhi-berlin.mpg.de

  2. Growth and characterization of epitaxial SrF2 on InP(100)

    NASA Technical Reports Server (NTRS)

    Sinharoy, S.; Hoffman, R. A.; Rieger, J. H.; Warner, J. D.; Bhasin, K. B.

    1986-01-01

    The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.

  3. Topographical and electrical study of contact and intermittent contact mode InP AFM lithography

    NASA Astrophysics Data System (ADS)

    Tranvouez, E.; Budau, P.; Bremond, G.

    2006-01-01

    In order to fabricate nanoscale oxide patterns on an InP(001) surface, local anodization by atomic force microscopy (AFM) contact and intermittent contact modes has been performed. Contact mode results are similar to those obtained with the local anodization of silicon, and mainly limited by the effect of space charge that occurs during the oxide growth. The existence of this space charge associated with the poor dielectric quality of the obtained oxide has been verified by performing scanning capacitance microscopy (SCM) measurements. Results for oxidation using intermittent AFM contact mode associated with a modulated voltage are more specific. For a more than two decade variation of probe velocity (0.01-5 µm s-1), the AFM oxidation introduces no significant changes in the oxide pattern. Experiments on the influence of oxidation time give rise to two regimes. First, for times shorter than 100 ms, a high growth rate is found. Second, for oxidation times longer than 100 ms, we observe an oxide height saturation and a significant decrease of lateral growth rate. These results provide a way to easily control the oxide shape. The space charge neutralization in this mode has also been investigated by SCM. The interesting results for intermittent contact oxidation confirm the capability of this technique to modify a nanoscale InP surface.

  4. Scalar and anisotropic J interactions in undoped InP: A triple-resonance NMR study

    NASA Astrophysics Data System (ADS)

    Tomaselli, Marco; Degraw, David; Yarger, Jeffery L.; Augustine, Matthew P.; Pines, Alexander

    1998-10-01

    The heteronuclear J-coupling tensor between nearest neighbor 31P and 113In spins in undoped InP is investigated by means of 113In-->31P polarization transfer under rapid magic angle spinning (MAS). The scalar contribution can be measured directly and is found to have the value \\|Jiso(31P-113,115In)\\|=(225+/-10) Hz. The principal value of the traceless anisotropic J-coupling tensor (pseudodipolar coupling) is determined to be Janiso(31P-113,115In)=2/3[J||(31P-113,115In)-J⊥(31P-113,115In)]=(813+/-50) or (1733+/-50) Hz, assuming axial symmetry with the principal axis parallel to the In-P bond. Our values deviate from those reported previously [M. Engelsberg and R. E. Norberg, Phys. Rev. B 5, 3395 (1972)] [based on a moment analysis of the 31P resonance \\|Jiso(31P-113,115In)\\|=350 Hz and Janiso(31P-113,115In)=1273 Hz], but confirm the postulate that the nearest neighbor 31P-113,115In magnetic dipolar and pseudodipolar interactions are of the same order of magnitude and partially cancel each other.

  5. Shallow n(+) diffusion into InP by an open-tube diffusion technique

    NASA Technical Reports Server (NTRS)

    Ghandhi, Sorab K.; Parat, Krishna K.

    1987-01-01

    Very shallow n(+) layers have been obtained in InP by using gallium sulfide as a source for sulfur diffusion, and chemically vapor-deposited SiO2 as a cap. Diffusions were carried out from 585 to 725 C in an open-tube system with a nitrogen ambient. The doping profile of sulfur in InP is estimated to be of the complementary error function type with a surface concentration of 5.6 x 10 to the 18th/cc and a diffusion constant of 1.1 x 10 to the -14th sq cm/s at 670 C. Diodes made on n(+)-p junctions obtained by this diffusion technique show ideality factors close to unity and saturation current densities as low as 3.4 x 10 to the -15th A/sq cm, signifying the presence of a defect-free junction. These diffusions, with junction depths in the 400-700 A range, are ideal for solar cell applications.

  6. Method for synthesizing HMX

    DOEpatents

    McGuire, Raymond R.; Coon, Clifford L.; Harrar, Jackson E.; Pearson, Richard K.

    1984-01-01

    A method and apparatus for electrochemically synthesizing N.sub.2 O.sub.5 cludes oxidizing a solution of N.sub.2 O.sub.4 /HNO.sub.3 at an anode, while maintaining a controlled potential between the N.sub.2 O.sub.4 /HNO.sub.3 solution and the anode. A potential of about 1.35 to 2.0 V vs. SCE is preferred, while a potential of about 1.80 V vs. SCE is most preferred. Thereafter, the N.sub.2 O.sub.5 is reacted with either 1.5-diacetyl-3,7-dinitro-1,3,5,7-tetraazacyclooctane (DADN) or 1,3,5,7-tetraacetyl-1,3,5,7-tetraazacyclooctane (TAT) to form cyclotetramethylenetetraamine (HMX).

  7. Synthesized light transients.

    PubMed

    Wirth, A; Hassan, M Th; Grguras, I; Gagnon, J; Moulet, A; Luu, T T; Pabst, S; Santra, R; Alahmed, Z A; Azzeer, A M; Yakovlev, V S; Pervak, V; Krausz, F; Goulielmakis, E

    2011-10-14

    Manipulation of electron dynamics calls for electromagnetic forces that can be confined to and controlled over sub-femtosecond time intervals. Tailored transients of light fields can provide these forces. We report on the generation of subcycle field transients spanning the infrared, visible, and ultraviolet frequency regimes with a 1.5-octave three-channel optical field synthesizer and their attosecond sampling. To demonstrate applicability, we field-ionized krypton atoms within a single wave crest and launched a valence-shell electron wavepacket with a well-defined initial phase. Half-cycle field excitation and attosecond probing revealed fine details of atomic-scale electron motion, such as the instantaneous rate of tunneling, the initial charge distribution of a valence-shell wavepacket, the attosecond dynamic shift (instantaneous ac Stark shift) of its energy levels, and its few-femtosecond coherent oscillations.

  8. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Coutts, T. J.

    1988-01-01

    The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

  9. Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy

    NASA Astrophysics Data System (ADS)

    Pluchery, O.; Chabal, Y. J.; Opila, R. L.

    2003-08-01

    Wet chemical cleaning is central to semiconductor device processing. For InP-based optoelectronic devices, controlling wet processing is challenging because of the high reactivity of InP surfaces in ambient air. In situ techniques are therefore critical to monitor and understand wet chemical etching and oxidation. We have combined in situ and ex situ Fourier transform infrared absorption spectroscopy, in direct transmission and multiple internal reflection configurations, with ex situ x-ray photoelectron spectroscopy to investigate the wet-chemical removal of "epi-ready" oxides on InP(100). Even dilute solutions of HCl, HF, or H2SO4 are found to completely remove the epi-ready oxides. For both HCl and HF, the InP surface is left unpassivated, exhibiting rapid recontamination and reoxidation upon air exposure. In contrast, H2SO4 aggressively etches the surface, and forms a thick and fragile oxide cap that can be washed away during a subsequent water rinse. This systematic in situ vibrational study of InP oxide chemistry provides a basis for a mechanistic understanding of wet chemical etching and oxidation.

  10. Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technology

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Paidi, V.; Griffith, Z.; Dahlstrom, M.; Wei, Y.; Urteaga, M.; Rodell, M. J. W.; Fung, A.

    2004-01-01

    We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.

  11. 1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC).

    PubMed

    Evans, P; Fisher, M; Malendevich, R; James, A; Goldfarb, G; Vallaitis, T; Kato, M; Samra, P; Corzine, S; Strzelecka, E; Studenkov, P; Salvatore, R; Sedgwick, F; Kuntz, M; Lal, V; Lambert, D; Dentai, A; Pavinski, D; Zhang, J; Cornelius, J; Tsai, T; Behnia, B; Bostak, J; Dominic, V; Nilsson, A; Taylor, B; Rahn, J; Sanders, S; Sun, H; Wu, K-T; Pleumeekers, J; Muthiah, R; Missey, M; Schneider, R; Stewart, J; Reffle, M; Butrie, T; Nagarajan, R; Ziari, M; Kish, F; Welch, D

    2011-12-12

    In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

  12. Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Coutts, T. J.

    1988-01-01

    The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

  13. Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technology

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Paidi, V.; Griffith, Z.; Dahlstrom, M.; Wei, Y.; Urteaga, M.; Rodell, M. J. W.; Fung, A.

    2004-01-01

    We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.

  14. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Wang, W. I.

    2013-10-01

    GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

  15. Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

    NASA Astrophysics Data System (ADS)

    Longo, R. C.; Carrete, J.; Alemany, M. M. G.; Gallego, L. J.

    2013-02-01

    Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers.

  16. A systems genetics approach identifies Trp53inp2 as a link between cardiomyocyte glucose utilization and hypertrophic response.

    PubMed

    Seldin, Marcus M; Kim, Eric D; Romay, Milagros C; Li, Shen; Rau, Christoph D; Wang, Jessica J; Krishnan, Karthickeyan Chella; Wang, Yibin; Deb, Arjun; Lusis, Aldons J

    2017-04-01

    Cardiac failure has been widely associated with an increase in glucose utilization. The aim of our study was to identify factors that mechanistically bridge this link between hyperglycemia and heart failure. Here, we screened the Hybrid Mouse Diversity Panel (HMDP) for substrate-specific cardiomyocyte candidates based on heart transcriptional profile and circulating nutrients. Next, we utilized an in vitro model of rat cardiomyocytes to demonstrate that the gene expression changes were in direct response to substrate abundance. After overlaying candidates of interest with a separate HMDP study evaluating isoproterenol-induced heart failure, we chose to focus on the gene Trp53inp2 as a cardiomyocyte glucose utilization-specific factor. Trp53inp2 gene knockdown in rat cardiomyocytes reduced expression and protein abundance of key glycolytic enzymes. This resulted in reduction of both glucose uptake and glycogen content in cardiomyocytes stimulated with isoproterenol. Furthermore, this reduction effectively blunted the capacity of glucose and isoprotereonol to synergistically induce hypertrophic gene expression and cell size expansion. We conclude that Trp53inp2 serves as regulator of cardiomyocyte glycolytic activity and can consequently regulate hypertrophic response in the context of elevated glucose content.NEW & NOTEWORTHY Here, we apply a novel method for screening transcripts based on a substrate-specific expression pattern to identify Trp53inp2 as an induced cardiomyocyte glucose utilization factor. We further show that reducing expression of the gene could effectively blunt hypertrophic response in the context of elevated glucose content. Copyright © 2017 the American Physiological Society.

  17. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

    NASA Astrophysics Data System (ADS)

    Azoulay, R.; Clei, A.; Dugrand, L.; Draïdia, auN.; Leroux, G.; Biblemont, S.

    1991-01-01

    The growth of GaAs on InP has attracted considerable interest recently because of the possibility of integration of GaAs electronic devices and 1.3 μm optical devices on the same wafer. In this work, we have investigated the growth of GaAs MESFETs and doped channel MIS-like FETs on InP by atmospheric pressure OMCVD. Because of the difference between the thermal expansion coefficient of GaAs and InP, the layers are under biaxial strain. The lowest FWHM of the (004) reflection curve of the double crystal X-ray diffraction spectra is 110 arc sec for a 12 μm thick layer. We have investigated the influence of the substrate temperature and of the arsine molar fraction on the residual carrier concentration of layers grown side by side on GaAs and on InP. The GaAs layers grown on InP are much more compensated than the layers grown on GaAs, indicating a higher incorporation of impurities. On MESFETs grown on InP, gm = 200mS/mm with Fmax higher than 30 GHz. On doped-channel MIS-like FETs on InP, we have measured gm = 145mS/mm.

  18. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-12-07

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots.

  19. Colloidal Synthesis of Quantum Confined Single Crystal CsPbBr3 Nanosheets with Lateral Size Control up to the Micrometer Range.

    PubMed

    Shamsi, Javad; Dang, Zhiya; Bianchini, Paolo; Canale, Claudio; Stasio, Francesco Di; Brescia, Rosaria; Prato, Mirko; Manna, Liberato

    2016-06-15

    We report the nontemplated colloidal synthesis of single crystal CsPbBr3 perovskite nanosheets with lateral sizes up to a few micrometers and with thickness of just a few unit cells (i.e., below 5 nm), hence in the strong quantum confinement regime, by introducing short ligands (octanoic acid and octylamine) in the synthesis together with longer ones (oleic acid and oleylamine). The lateral size is tunable by varying the ratio of shorter ligands over longer ligands, while the thickness is mainly unaffected by this parameter and stays practically constant at 3 nm in all the syntheses conducted at short-to-long ligands volumetric ratio below 0.67. Beyond this ratio, control over the thickness is lost and a multimodal thickness distribution is observed.

  20. Colloidal Synthesis of Quantum Confined Single Crystal CsPbBr3 Nanosheets with Lateral Size Control up to the Micrometer Range

    PubMed Central

    2016-01-01

    We report the nontemplated colloidal synthesis of single crystal CsPbBr3 perovskite nanosheets with lateral sizes up to a few micrometers and with thickness of just a few unit cells (i.e., below 5 nm), hence in the strong quantum confinement regime, by introducing short ligands (octanoic acid and octylamine) in the synthesis together with longer ones (oleic acid and oleylamine). The lateral size is tunable by varying the ratio of shorter ligands over longer ligands, while the thickness is mainly unaffected by this parameter and stays practically constant at 3 nm in all the syntheses conducted at short-to-long ligands volumetric ratio below 0.67. Beyond this ratio, control over the thickness is lost and a multimodal thickness distribution is observed. PMID:27228475

  1. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  2. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  3. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    NASA Astrophysics Data System (ADS)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-10-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  4. Doclet To Synthesize UML

    NASA Technical Reports Server (NTRS)

    Barry, Matthew R.; Osborne, Richard N.

    2005-01-01

    The RoseDoclet computer program extends the capability of Java doclet software to automatically synthesize Unified Modeling Language (UML) content from Java language source code. [Doclets are Java-language programs that use the doclet application programming interface (API) to specify the content and format of the output of Javadoc. Javadoc is a program, originally designed to generate API documentation from Java source code, now also useful as an extensible engine for processing Java source code.] RoseDoclet takes advantage of Javadoc comments and tags already in the source code to produce a UML model of that code. RoseDoclet applies the doclet API to create a doclet passed to Javadoc. The Javadoc engine applies the doclet to the source code, emitting the output format specified by the doclet. RoseDoclet emits a Rose model file and populates it with fully documented packages, classes, methods, variables, and class diagrams identified in the source code. The way in which UML models are generated can be controlled by use of new Javadoc comment tags that RoseDoclet provides. The advantage of using RoseDoclet is that Javadoc documentation becomes leveraged for two purposes: documenting the as-built API and keeping the design documentation up to date.

  5. Formulation of the Microbicide INP0341 for In Vivo Protection against a Vaginal Challenge by Chlamydia trachomatis

    PubMed Central

    Pedersen, Christian; Slepenkin, Anatoly; Andersson, Sara B. E.; Fagerberg, Jonas H.; Bergström, Christel A. S.; Peterson, Ellena M.

    2014-01-01

    The salicylidene acylhydrazide (SA) compounds have exhibited promising microbicidal properties. Previous reports have shown the SA compounds, using cell cultures, to exhibit activity against Chlamydia trachomatis, herpes simplex virus and HIV-1. In addition, using an animal model of a vaginal infection the SA compound INP0341, when dissolved in a liquid, was able to significantly protect mice from a vaginal infection with C. trachomatis. To expand upon this finding, in this report INP0341 was formulated as a vaginal gel, suitable for use in humans. Gelling agents (polymers) with inherent antimicrobial properties were chosen to maximize the total antimicrobial effect of the gel. In vitro formulation work generated a gel with suitable rheology and sustained drug release. A formulation containing 1 mM INP0341, 1.6 wt% Cremophor ELP (solubility enhancer) and 1.5 wt% poly(acrylic acid) (gelling and antimicrobial agent), was chosen for studies of efficacy and toxicity using a mouse model of a vaginal infection. The gel formulation was able to attenuate a vaginal challenge with C. trachomatis, serovar D. Formulations with and without INP0341 afforded protection, but the inclusion of INP0341 increased the protection. Mouse vaginal tissue treated with the formulation showed no indication of gel toxicity. The lack of toxicity was confirmed by in vitro assays using EpiVaginal tissues, which showed that a 24 h exposure to the gel formulation did not decrease the cell viability or the barrier function of the tissue. Therefore, the gel formulation described here appears to be a promising vaginal microbicide to prevent a C. trachomatis infection with the potential to be expanded to other sexually transmitted diseases. PMID:25356686

  6. High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

    1997-01-01

    A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

  7. Jupiter's Cloud Distribution Between the Voyager 1 and 2 Encounters: Results from 5-Micrometer Imaging.

    PubMed

    Terrile, R J; Capps, R W; Becklin, E E; Cruikshank, D P

    1979-11-23

    As part of a continuing effort of ground-based support for Voyager target selection, infrared images in the 5-micrometer wavelength region were acquired in preparation for the Voyager 2 flyby of Jupiter. Observations were made during May 1979 from the Palomar 5-meter telescope and the new 3-meter NASA Infrared Telescope Facility at Mauna Kea and are compared to previous observations. Variations seen in the 5-micrometer flux distribution suggest global patterns of clouding over of some Jovian belts and clearing ofothers. These data were used to predict the Jovian cloud distribution at the time of the Voyager 2 encounter in order to target the imaging and infrared experiments to areas free of high obscuring clouds.

  8. One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications

    NASA Astrophysics Data System (ADS)

    Groves, Imelda; Brown, George; Pollack, G.; Green, K.; Dawson, L.; D'Souza, Arvind; Lin, C.; Song, M.; Hwang, C.; Woo, Jason C.; Macwilliams, Kenneth P.

    1994-06-01

    Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO(subscript 2) gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.

  9. Impressive electromagnetic shielding effects exhibited by highly ordered, micrometer thick polyaniline films

    NASA Astrophysics Data System (ADS)

    Mohan, Ranjini R.; Varma, Sreekanth J.; Sankaran, Jayalekshmi

    2016-04-01

    The present work highlights the remarkably high shielding effectiveness of about 68 dB, exhibited by highly ordered and doped polyaniline films, in the microwave frequency range 4-12 GHz, obtained by self-stabilized dispersion polymerization as the synthesis route. The observed shielding effectiveness is found to depend quite sensitively on the electrical conducting properties, which are predominantly controlled by the nature and concentration of the dopants. The structural and morphological characterization of the films using XRD and TEM techniques reveals surprisingly high extent of crystallinity, which contributes significantly towards enhancing the electrical conductivity of the films. Most of the available reports on the microwave response of conducting polymer film samples deal with much thicker films, compared to the micrometer thick films of the present studies. The shielding effectiveness of acid doped, micrometer thick polyaniline films reported in the present work far exceeds most of the previously reported values and meets the commercial requirements.

  10. Infrared spectroscopic ellipsometry of micrometer-sized SiO2 line gratings

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Zellmeier, Matthias; Rappich, Jörg; Ketelsen, Helge; Hinrichs, Karsten

    2017-09-01

    For the design and process control of periodic nano-structured surfaces spectroscopic ellipsometry is already established in the UV-VIS spectral regime. The objective of this work is to show the feasibility of spectroscopic ellipsometry in the infrared, exemplarily, on micrometer-sized SiO2 line gratings grown on silicon wafers. The grating period ranges from 10 to about 34 μm. The IR-ellipsometric spectra of the gratings exhibit complex changes with structure variations. Especially in the spectral range of the oxide stretching modes, the presence of a Rayleigh singularity can lead to pronounced changes of the spectrum with the sample geometry. The IR-ellipsometric spectra of the gratings are well reproducible by calculations with the RCWA method (Rigorous Coupled Wave Analysis). Therefore, infrared spectroscopic ellipsometry allows the quantitative characterization and process control of micrometer-sized structures.

  11. The spectral appearance of comets from 5 to 20 micrometers: A survey of the data

    NASA Technical Reports Server (NTRS)

    Bregman, Jesse D.

    1988-01-01

    Based on the concept of comets as being conglomerates of rocks and ices, it is expected that they reflect these components in their emission spectra. Silicate materials (rocks) are common in many astronomical environments and show prominent features at about 10 and 18 micrometers. Carbon should be abundant, but is much more difficult to detect spectroscopically since it has no strong features (except for the hydrogenated form). Ices are present in comets, but they are difficult to detect since they are volatile enough to dissipate when the comet is bright enough to be easily observed in the IR, with present equipment. There are other materials present in comets, but the ones listed above should be the most common and thus dominate the thermal IR spectrum. Most of the IR observations made on comets between 5 and 20 micrometers are summarized. They fall into three broad categories: (1) filter photometry; (2) circular variable filter wheel spectroscopy; and (3) spectra obtained with multidetector grating spectrometers.

  12. Novel magnetic Fe onion-like fullerene micrometer-sized particles of narrow size distribution

    NASA Astrophysics Data System (ADS)

    Snovski, Ron; Grinblat, Judith; Margel, Shlomo

    2012-01-01

    Magnetic polydivinylbenzene (PDVB)/magnetite micrometer-sized particles of narrow size distribution were prepared by entrapping Fe(CO)5 within the pores of uniform porous PDVB particles, followed by the thermal decomposition of the encapsulated Fe(CO)5 at 300 °C in a sealed cell under inert atmosphere. Magnetic Fe onion-like fullerene micrometer-sized particles of narrow size distribution have been prepared by the thermal decomposition of the PDVB/magnetite magnetic microspheres at 1100 °C under inert atmosphere. The graphitic coating protects the elemental iron particles from oxidation and thereby preserves their very high magnetic moment for at least a year. Characterization of these unique magnetic carbon graphitic particles was also performed.

  13. Derivation of midinfrared (5-25 micrometers) optical constants of some silicates and palagonite.

    PubMed

    Roush, T; Pollack, J; Orenberg, J

    1991-01-01

    The midinfrared 2000-400 cm-1 (5-25 micrometers) optical constants (real (n) and imaginary (k) indices of refraction) are presented for: (1) pyrophyllite; (2) kaolinite; (3) serpentine; (4) montmorillonite; (5) saponite; (6) palagonite; and (7) orthopyroxene. Comparison of the values derived here with those previously presented for serpentine, montmorillonite, and palagonite is generally quite good and discrepancies between values are probably due to either chemical differences between the actual samples or different techniques used to derive the values. For montmorillonite, saponite, and palagonite we were able to derive optical constants in the region of the H2O-bending fundamental near 6 micrometers. We find that if a pellet of pure material can be produced with a mirror-like surface then the optical constants of clays and other noncohesive materials can be readily derived.

  14. Three-dimensional location of micrometer-sized particles in macroscopic domains using astigmatic aberrations.

    PubMed

    Fuchs, Thomas; Hain, Rainer; Kähler, Christian J

    2014-03-01

    This Letter presents a theoretical and experimental image formation study in the presence of astigmatic aberrations. A three-dimensional, macroscopic location scheme of micrometer-sized particles for the single camera astigmatism particle tracking velocimetry (APTV) technique is introduced. Average particle z position determination errors of the technique are as low as 0.33%, with a measurement depth of 40 mm. These accuracies show APTV's ability of measuring volumetric velocity fields in macroscopic domains with limited optical access.

  15. 2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors

    NASA Technical Reports Server (NTRS)

    Sulima, O. V.; Swaminathan, K.; Refaat, T. F.; Faleev, N. N.; Semenov, A. N.; Solov'ev, V. A.; Ivanov, S. V.; Abedin, M. N.; Singh, U. N.; Prather, D.

    2006-01-01

    We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

  16. Space-time rescaling symmetry in the tactic migration of micrometer-size organisms

    NASA Astrophysics Data System (ADS)

    Rosen, Gerald

    1983-02-01

    It is observed that the Navier-Stokes rescaling invariance x-->-->λx-->, t-->λ2t, v-->-->λ-1v--> shows up in the chemotaxis of motile E. coli and the phototaxis of P. uncinatum. Quantitatively accurate measurements on other motile bacteria and blue-green algae may reveal that this underlying hydrodynamic symmetry is featured commonly in the tactic migration of micrometer-size organisms in aqueous media.

  17. Micrometer-scale mixing with Pickering emulsions: biphasic reactions without stirring.

    PubMed

    Zhang, Wenjuan; Fu, Luman; Yang, Hengquan

    2014-02-01

    A general strategy that avoids stirring for organic/aqueous reactions involving solid catalysts is reported. The strategy involves converting a conventional biphasic system into a Pickering emulsion phase with micrometer-scale droplets ensuring good mixing. In test reactions, nitrotoluene reduction and epoxidation of allylic alcohols, the reaction efficiency is comparable to conventional stirrer-driven biphasic catalysis reaction systems. Short diffusion distances, arising from the compartmentalization of densely packed droplets, play an important role in boosting the reaction efficiency.

  18. Dry Sliding Behavior of Sub-Micrometer-Sized Suspension Plasma Sprayed Ceramic Oxide Coatings

    NASA Astrophysics Data System (ADS)

    Darut, Geoffrey; Ben-Ettouil, Fadhel; Denoirjean, Alain; Montavon, Ghislain; Ageorges, Hélène; Fauchais, Pierre

    2010-01-01

    Almost half of the energy produced by an automotive engine is dissipated by friction in the cylinders, the clutch, etc. In the context of reduction of the emissions of greenhouse gases (GHGs) to mitigate climate global warming (CGW), reduction of energy losses due to friction is a critical issue. Surface treatments appear in such a context, as never than before, to be able to provide pertinent solutions to improve sliding behavior of mechanical parts. Numerous studies have clearly shown that decreasing the scale of coating structure below the micrometer scale was leading to an improvement of its tribological behavior in terms of friction coefficient and wear rate thanks to improved mechanical properties, the toughness in particular. Suspension Plasma Spraying (SPS) appears as a thermal spray process to be able to manufacture thick (i.e., a few tens of micrometers) coatings exhibiting a sub-micrometer-sized or even a nanometer-sized architecture, while keeping the versatility and flexibility of the thermal spray routes: i.e., the ability to process a wide range of material natures onto a wide range of substrate materials of various geometries. This article aims at studying the tribological behavior of several ceramic oxide composite coatings under dry conditions. The structural scale and the effect of composition are considered in particular.

  19. Modeling thermal infrared (2-14 micrometer) reflectance spectra of frost and snow

    NASA Technical Reports Server (NTRS)

    Wald, Andrew E.

    1994-01-01

    Existing theories of radiative transfer in close-packed media assume that each particle scatters independently of its neighbors. For opaque particles, such as are common in the thermal infrared, this assumption is not valid, and these radiative transfer theories will not be accurate. A new method is proposed, called 'diffraction subtraction', which modifies the scattering cross section of close-packed large, opaque spheres to account for the effect of close packing on the diffraction cross section of a scattering particle. This method predicts the thermal infrared reflectance of coarse (greater than 50 micrometers radius), disaggregated granular snow. However, such coarse snow is typically old and metamorphosed, with adjacent grains welded together. The reflectance of such a welded block can be described as partly Fresnel in nature and cannot be predicted using Mie inputs to radiative transfer theory. Owing to the high absorption coefficient of ice in the thermal infrared, a rough surface reflectance model can be used to calculate reflectance from such a block. For very small (less than 50 micrometers), disaggregated particles, it is incorrect in principle to treat diffraction independently of reflection and refraction, and the theory fails. However, for particles larger than 50 micrometers, independent scattering is a valid assumption, and standard radiative transfer theory works.

  20. Different freezing behavior of millimeter- and micrometer-scaled (NH₄)₂SO₄/H₂O droplets.

    PubMed

    Bogdan, A; Molina, M J; Tenhu, H; Mayer, E; Bertel, E; Loerting, T

    2011-01-26

    Although the freezing of aqueous solutions is important for nature and different branches of science and freeze-applications, our understanding of the freezing process is not complete. For example, numerous measurements of micrometer-scaled (NH(4))(2)SO(4)/H(2)O droplets report one freezing event below the eutectic point. However, measurements of larger millimeter-scaled droplets reveal two freezing events: the freezing out of ice and subsequent freezing of a residual freeze-concentrated solution. To resolve this apparent contradiction we performed numerous calorimetric measurements which indicate that the freezing of a residual solution of millimeter-scaled 5-38 wt% (NH(4))(2)SO(4) droplets occurs mainly between ∼ 210 and 225 K. We also find that micrometer-scaled droplets produce one freezing event which is within or in the vicinity of the ∼ 210-225 K region. This fact and the analysis of thermograms suggest that the residual solution of micrometer-scaled droplets may partly crystallize simultaneously with ice and partly transform to glass at T(g)≈172 K. Our results suggest for the first time that the size of (NH(4))(2)SO(4)/H(2)O droplets may affect the number of freezing events below the eutectic point.

  1. Modeling thermal infrared (2-14 micrometer) reflectance spectra of frost and snow

    NASA Technical Reports Server (NTRS)

    Wald, Andrew E.

    1994-01-01

    Existing theories of radiative transfer in close-packed media assume that each particle scatters independently of its neighbors. For opaque particles, such as are common in the thermal infrared, this assumption is not valid, and these radiative transfer theories will not be accurate. A new method is proposed, called 'diffraction subtraction', which modifies the scattering cross section of close-packed large, opaque spheres to account for the effect of close packing on the diffraction cross section of a scattering particle. This method predicts the thermal infrared reflectance of coarse (greater than 50 micrometers radius), disaggregated granular snow. However, such coarse snow is typically old and metamorphosed, with adjacent grains welded together. The reflectance of such a welded block can be described as partly Fresnel in nature and cannot be predicted using Mie inputs to radiative transfer theory. Owing to the high absorption coefficient of ice in the thermal infrared, a rough surface reflectance model can be used to calculate reflectance from such a block. For very small (less than 50 micrometers), disaggregated particles, it is incorrect in principle to treat diffraction independently of reflection and refraction, and the theory fails. However, for particles larger than 50 micrometers, independent scattering is a valid assumption, and standard radiative transfer theory works.

  2. Micrometer-Scale Ion Current Rectification at Polyelectrolyte Brush-Modified Micropipets.

    PubMed

    He, Xiulan; Zhang, Kailin; Li, Ting; Jiang, Yanan; Yu, Ping; Mao, Lanqun

    2017-02-01

    Here we report for the first time that ion current rectification (ICR) can be observed at the micrometer scale in symmetric electrolyte solution with polyimidazolium brush (PimB)-modified micropipets, which we call micrometer-scale ion current rectification (MICR). To qualitatively understand MICR, a three-layer model including a charged layer, an electrical double layer, and a bulk layer is proposed, which could also be extended to understanding ICR at the nanoscale. Based on this model, we propose that when charges in the charged layer are comparable with those in the bulk layer, ICR would occur regardless of whether the electrical double layers are overlapped. Finite element simulations based on the solution of Poisson and Nernst-Planck equations and in situ confocal laser scanning microscopy results qualitatively validate the experimental observations and the proposed three-layer model. Moreover, possible factors influencing MICR, including the length of PimB, electrolyte concentration, and the radius of the pipet, are investigated and discussed. This study successfully extends ICR to the micrometer scale and thus opens a new door to the development of ICR-based devices by taking advantage of ease-in-manipulation and designable surface chemistry of micropipets.

  3. Optical properties of InP doping superlattices grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gal, M.; Viner, J. M.; Taylor, P. C.; Yaun, J. S.; Stringfellow, G. B.

    1987-04-01

    Photoluminescence (PL), time-resolved PL, and photoreflectance spectroscopy are applied to InP doping superlattices grown by metal organic chemical vapor deposition. It is observed that the emission peak and line shape depend on the optical excitation intensity; the peak of the CW PL spectrum increases in energy with the intensity of the pumping light; the highest energy peak is at 888 nm; and the time-resolved PL exhibits long decay times. The energy separation of the quantized subbands is studied by measuring the PR spectra of two samples. The measurements reveal that PR line shapes are explained by photomodulation of the subbands in the conduction band; these line shapes account for the dependence of the spectrum on the power of the exciting light and on the layer thickness.

  4. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si.

    PubMed

    Pantzas, K; Le Bourhis, E; Patriarche, G; Troadec, D; Beaudoin, G; Itawi, A; Sagnes, I; Talneau, A

    2016-03-18

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m(-2), respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  5. Studies of Nonradiative Recombination Centers in GaAs and InP*

    NASA Astrophysics Data System (ADS)

    Tuzemen, S.; Liang, Difei; Ucer, K. B.; Williams, R. T.

    2001-03-01

    The "reverse contrast" recombination center in semi-insulating GaAs, so named because of its anti-correlation with EL2 defects in spatial mapping, has been attributed to As-vacancy centers.^1 Several details of the nature of its optical transitions and of its spatial distribution are among questions open to experimental investigation. We report experiments on spectroscopy and spatial mapping of defects in semi-insulating GaAs and Fe-doped InP. *ST acknowledges the CIES for support as a Fulbright Scholar at WFU. The research at WFU is supported by NSF grant DMR-9732023. Confocal microscopy in cooperation with K. Grant and the MicroMed Facility of WFU. 1. C. Le Berre, C. Corbel, R. Mih, M. R. Brozel, S. Tüzemen, S. Kuisma, K. Saarinen, P. Hautojarvi, and R. Fornari, Appl. Phys. Lett. 66, 2354 (1995).

  6. On-orbit results of the LIPS 3/InP homojunction solar cell experiment

    NASA Technical Reports Server (NTRS)

    Brinker, David J.

    1989-01-01

    The flight performance of NASA Lewis Research Center's indium phosphide homojunction solar cell module on the LIPS 3 satellite is presented. A module of four n+p cells was fabricated and has been on-orbit on the LIPS 3 spacecraft since 1987. The experimental objective is the measurement of InP cell performance in the natural radiation environment of the 1100 kilometer altitude, 60 deg inclination, circular orbit. Flight data from the first year is near expected values, with no degradation in short-circuit current. The temperature dependence of current-voltage parameters is included along with the laboratory radiation tolerance studies necessary for normalization and analysis of the data. Details of the cell structure and flight module design are also discussed.

  7. Polarization-analyzing circuit on InP for integrated Stokes vector receiver.

    PubMed

    Ghosh, Samir; Kawabata, Yuto; Tanemura, Takuo; Nakano, Yoshiaki

    2017-05-29

    Stokes vector modulation and direct detection (SVM/DD) has immense potentiality to reduce the cost burden for the next-generation short-reach optical communication networks. In this paper, we propose and demonstrate an InGaAsP/InP waveguide-based polarization-analyzing circuit for an integrated Stokes vector (SV) receiver. By transforming the input state-of-polarization (SOP) and projecting its SV onto three different vectors on the Poincare sphere, we show that the actual SOP can be retrieved by simple calculation. We also reveal that this projection matrix has a flexibility and its deviation due to device imperfectness can be calibrated to a certain degree, so that the proposed device would be fundamentally robust against fabrication errors. A proof-of-concept photonic integrated circuit (PIC) is fabricated on InP by using half-ridge waveguides to successfully demonstrate detection of different SOPs scattered on the Poincare sphere.

  8. Bias-dependent spectral tuning in InP nanowire-based photodetectors

    NASA Astrophysics Data System (ADS)

    Jain, Vishal; Heurlin, Magnus; Karimi, Mohammad; Hussain, Laiq; Aghaeipour, Mahtab; Nowzari, Ali; Berg, Alexander; Nylund, Gustav; Capasso, Federico; Samuelson, Lars; Borgström, Magnus T.; Pettersson, Håkan

    2017-03-01

    Nanowire array ensembles contacted in a vertical geometry are extensively studied and considered strong candidates for next generations of industrial scale optoelectronics. Key challenges in this development deal with optimization of the doping profile of the nanowires and the interface between nanowires and transparent top contact. Here we report on photodetection characteristics associated with doping profile variations in InP nanowire array photodetectors. Bias-dependent tuning of the spectral shape of the responsivity is observed which is attributed to a Schottky-like contact at the nanowire–ITO interface. Angular dependent responsivity measurements, compared with simulated absorption spectra, support this conclusion. Furthermore, electrical simulations unravel the role of possible self-gating effects in the nanowires induced by the ITO/SiO x wrap-gate geometry. Finally, we discuss possible reasons for the observed low saturation current at large forward biases.

  9. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    NASA Technical Reports Server (NTRS)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  10. Determining the base resistance of InP HBTs: An evaluation of methods and structures

    NASA Astrophysics Data System (ADS)

    Nardmann, Tobias; Krause, Julia; Pawlak, Andreas; Schroter, Michael

    2016-09-01

    Many different methods can be found in the literature for determining both the internal and external base series resistance based on single transistor terminal characteristics. Those methods are not equally reliable or applicable for all technologies, device sizes and speeds. In this review, the most common methods are evaluated regarding their suitability for InP heterojunction bipolar transistors (HBTs) based on both measured and simulated data. Using data generated by a sophisticated physics-based compact model allows an evaluation of the extraction method precision by comparing the extracted parameter value to its known value. Based on these simulations, this study provides insight into the limitations of the applied methods, causes for errors and possible error mitigation. In addition to extraction methods based on just transistor terminal characteristics, test structures for separately determining the components of the base resistance from sheet and specific contact resistances are discussed and applied to serve as reference for the experimental evaluation.

  11. Etching of InP by H3PO4, H2O2 Solutions

    NASA Astrophysics Data System (ADS)

    Mouton, A.; Sundararaman, C. S.; Lafontaine, H.; Poulin, S.; Currie, J. F.

    1990-10-01

    This paper deals with the chemical etching of (100) InP using a phosphoric acid and hydrogen peroxide mixture. It is shown that the etching rate is strongly dependent on the relative concentration of the two species; it is maximal for an equivolumic solution, and depending on the dilution it ranges from 70 to 20 Å/min. The activation energy of a non-diluted solution is approximately 14 kcal/mol. The post-etch surface state of the sample analysed by SEM and XPS, shows a very smooth surface for all concentrations, and the formation of a InPO4\\cdotxH2O layer. This solution can be used as a very precise etchant in devices processes.

  12. Plasma deposited diamondlike carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1984-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  13. Plasma deposited hydrogenated carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1985-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  14. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    NASA Astrophysics Data System (ADS)

    Pantzas, K.; Le Bourhis, E.; Patriarche, G.; Troadec, D.; Beaudoin, G.; Itawi, A.; Sagnes, I.; Talneau, A.

    2016-03-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m-2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  15. A 20-GHz ultra-high-speed InP DHBT comparator

    NASA Astrophysics Data System (ADS)

    Zhenxing, Huang; Lei, Zhou; Yongbo, Su; Zhi, Jin

    2012-07-01

    An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm2. It consumes 440 mW from a single -4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China.

  16. Anomalous photoluminescence in InP1−xBix

    PubMed Central

    Wu, Xiaoyan; Chen, Xiren; Pan, Wenwu; Wang, Peng; Zhang, Liyao; Li, Yaoyao; Wang, Hailong; Wang, Kai; Shao, Jun; Wang, Shumin

    2016-01-01

    Low temperature photoluminescence (PL) from InP1−xBix thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT). PMID:27291823

  17. Dose and doping dependence of damage annealing in Fe MeV implanted InP

    SciTech Connect

    Carnera, A.; Fraboni, B.; Gasparotto, A. |; Priolo, F. |; Camporese, A.; Rossetto, G.; Frigeri, C.; Cassa, A.

    1996-12-31

    High energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5 {times} 10{sup 13} and 5 {times} 10{sup 14} at/cm{sup 2}. Annealing in the 650--800 C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analyzed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

  18. Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature

    SciTech Connect

    Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C.; Chen, K.H.; Santhakumar, K.; Soga, T.

    2006-06-12

    The InN phase is grown in crystalline InP(100) substrates by 50 keV N{sup +} implantation at an elevated temperature of 400 deg. C followed by annealing at 525 deg. C in N{sub 2} ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak {approx}1.06 eV at temperatures {<=}150 K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.

  19. InP homojunction solar cell performance on the LIPS 3 flight experiment

    NASA Technical Reports Server (NTRS)

    Brinker, David J.; Hart, Russell E., Jr.; Weinberg, Irving; Smith, Brian S.

    1988-01-01

    Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 Flight Experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

  20. Plasma deposited hydrogenated carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1985-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  1. Bias-dependent spectral tuning in InP nanowire-based photodetectors.

    PubMed

    Jain, Vishal; Heurlin, Magnus; Karimi, Mohammad; Hussain, Laiq; Aghaeipour, Mahtab; Nowzari, Ali; Berg, Alexander; Nylund, Gustav; Capasso, Federico; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

    2017-03-17

    Nanowire array ensembles contacted in a vertical geometry are extensively studied and considered strong candidates for next generations of industrial scale optoelectronics. Key challenges in this development deal with optimization of the doping profile of the nanowires and the interface between nanowires and transparent top contact. Here we report on photodetection characteristics associated with doping profile variations in InP nanowire array photodetectors. Bias-dependent tuning of the spectral shape of the responsivity is observed which is attributed to a Schottky-like contact at the nanowire-ITO interface. Angular dependent responsivity measurements, compared with simulated absorption spectra, support this conclusion. Furthermore, electrical simulations unravel the role of possible self-gating effects in the nanowires induced by the ITO/SiO x wrap-gate geometry. Finally, we discuss possible reasons for the observed low saturation current at large forward biases.

  2. InP homojunction solar cell performance on the LIPS III flight experiment

    NASA Technical Reports Server (NTRS)

    Brinker, David J.; Hart, Russell E., Jr.; Weinberg, Irving; Smith, Brian S.

    1988-01-01

    Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 flight experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

  3. Self-catalyzed Growth of InAs Nanowires on InP Substrate

    NASA Astrophysics Data System (ADS)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2017-01-01

    We report on the self-catalyzed growth of InAs nanowires on InP substrate by metal-organic chemical vapor deposition. At a moderate V/III ratio, tapered nanowires are obtained, suggesting a strong surface diffusion effect. Dense twin faults are observed perpendicular to the nanowire growth direction due to the fluctuation of In atoms in the droplet originating from the surface diffusion effect. At a lower V/III ratio, the nanowires exhibit kinking, which is associated with a high adhesion due to a large sticking coefficient of TMIn. The twin faults are dramatically suppressed and even completely eliminated in the NW branch after kinking, which is attributed to a stable In supply with a negligible diffusion effect. This work provides a method for the fabrication of defect-free InAs nanowires.

  4. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

    NASA Astrophysics Data System (ADS)

    Ismaeel Maricar, Mohamed; Khalid, A.; Dunn, G.; Cumming, D.; Oxley, C. H.

    2015-01-01

    An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s-1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s-1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

  5. Effect of native oxide mechanical deformation on InP nanoindentation

    NASA Astrophysics Data System (ADS)

    Almeida, C. M.; Prioli, R.; Ponce, F. A.

    2008-12-01

    Native oxide has been found to have a noticeable effect on the mechanical deformation of InP during nanoindentation. The indentations were performed using spherical diamond tips and the residual impressions were studied by atomic force microscopy. It has been observed that in the early stages of mechanical deformation, plastic flow occurs in the oxide layer while the indium phosphide is still in the elastic regime. The deformed native oxide layer results in a pile-up formation that causes an increase in the contact area between the tip and the surface during the nanoindentation process. This increase in the projected contact area is shown to contribute to the apparent high pressure sustained by the crystal before the onset of plastic deformation. It is also shown that the stress necessary to generate the first dislocations from the crystal surface is ˜3 GPa higher than the stress needed for slip to occur when dislocations are already present in the crystalline structure.

  6. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    SciTech Connect

    Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

    2016-05-21

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

  7. Diffusion length damage coefficient and annealing studies in proton-irradiated InP

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Vargas-Aburto, Carlos; Bailey, Sheila G.; Williams, Wendell

    1993-01-01

    We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

  8. Photonics integrations enabling high-end applications of InP in optical data transmissions

    NASA Astrophysics Data System (ADS)

    Zhang, Jiaming; Frateschi, Newton; Jambunathan, Ram; Choi, Wonjin; Bond, Aaron E.

    2005-10-01

    We present here results from a uniquely designed InP modulator chip combined with advanced packaging concepts, which enables high-end applications in optical data communications. An electroabsorption (EA) modulator, with a strained InGaAsP or InGaAlAs multiple quantum well structure, is monolithically integrated with a semiconductor optical amplifier. This design offers broad wavelength tunability while maintaining high extinction ratio, high optical output power, and high dispersion tolerance. The amplified EA modulator chip is co-packaged with a distributed feed back (DFB) laser ensuring separate optimization of the laser and modulator sections. The optical isolator, placed between the laser and modulator, completely eliminates adiabatic chirp. This Telcordia-qualified laser integrated modulator platform enables superior performance previously not thought possible for InP absorption based modulators. 11dB of dynamic extinction ratio, 5dBm of modulated output power, and +/-1200ps/nm or +1600ps/nm dispersion tolerance can be simultaneously achieved in un-amplified 10Gb/s data transmission. Full C-band tunability using a single device is also demonstrated with the LIM module. Extensive simulations and transmission system evaluations shows that with the controllable chirp, the cost-effective LIM performs as well as a Mach-Zehnder modulator in dispersion managed and amplified long-haul WDM systems. Lastly, the first uncooled 10Gb/s long-reach operation at 1550nm was demonstrated with LIM packages. Using a simple control algorithm, a constant modulated output power of 1dBm with less than 1dB dispersion penalty over 1600ps/nm single mode fiber is achieved in an 80 degrees environmental temperature range without any module temperature control. Utilizing the Al-based material system, also allows a reduced variation of the extinction ratio.

  9. InP Nanowire Biosensor with Tailored Biofunctionalization: Ultrasensitive and Highly Selective Disease Biomarker Detection.

    PubMed

    Janissen, Richard; Sahoo, Prasana K; Santos, Clelton A; da Silva, Aldeliane M; von Zuben, Antonio A G; Souto, Denio E P; Costa, Alexandre D T; Celedon, Paola; Zanchin, Nilson I T; Almeida, Diogo B; Oliveira, Douglas S; Kubota, Lauro T; Cesar, Carlos L; Souza, Anete P de; Cotta, Monica A

    2017-10-11

    Electrically active field-effect transistors (FET) based biosensors are of paramount importance in life science applications, as they offer direct, fast, and highly sensitive label-free detection capabilities of several biomolecules of specific interest. In this work, we report a detailed investigation on surface functionalization and covalent immobilization of biomarkers using biocompatible ethanolamine and poly(ethylene glycol) derivate coatings, as compared to the conventional approaches using silica monoliths, in order to substantially increase both the sensitivity and molecular selectivity of nanowire-based FET biosensor platforms. Quantitative fluorescence, atomic and Kelvin probe force microscopy allowed detailed investigation of the homogeneity and density of immobilized biomarkers on different biofunctionalized surfaces. Significantly enhanced binding specificity, biomarker density, and target biomolecule capture efficiency were thus achieved for DNA as well as for proteins from pathogens. This optimized functionalization methodology was applied to InP nanowires that due to their low surface recombination rates were used as new active transducers for biosensors. The developed devices provide ultrahigh label-free detection sensitivities ∼1 fM for specific DNA sequences, measured via the net change in device electrical resistance. Similar levels of ultrasensitive detection of ∼6 fM were achieved for a Chagas Disease protein marker (IBMP8-1). The developed InP nanowire biosensor provides thus a qualified tool for detection of the chronic infection stage of this disease, leading to improved diagnosis and control of spread. These methodological developments are expected to substantially enhance the chemical robustness, diagnostic reliability, detection sensitivity, and biomarker selectivity for current and future biosensing devices.

  10. A dense spot size converter array fabricated in a generic process on InP

    NASA Astrophysics Data System (ADS)

    D'Agostino, D.; Kleijn, E.; Santos, R.; Ambrosius, H. P. M. M.; Smit, M. K.

    2013-05-01

    Integrated spot size converters (SSCs) are key components for efficient coupling between Photonic Integrated Circuits (PICs) and fibre-arrays. We report a compact SSC which is suitable for integration into dense arrays with a pitch down to 25 μm and compatible with our generic InP-based platform technology, which supports integration of SOAs and Electro Optical Modulators with a range of passive components. The small pitch supports coupling tens of on-chip optical waveguide ports to fiber arrays via a low-loss dielectric interposer chip. The density allows the design of a customized optical bus between the InP PIC and the interposer chip. The dielectric chip may simply expand to the pitch of a fiber array but also contain low-loss passive circuitry like delay-lines, high Q-filters and multiplexers. The latter enables the formation of a hybrid integration platform with our InP-based technology. Efficient coupling is obtained by adiabatically transforming the sub-micron modes of the InP waveguides to the 3 μm diameter mode of the interposer. We tested our SSCs by coupling to a lensed fibre with a mode field diameter of 2.5 μm. Coupling losses were found to be as low as 0.6 dB per fiber chip coupling for device lengths of a few 100 μm. We also measured the crosstalk from one input port to output ports adjacent to the targeted output port. We present simple design rules for reducing the crosstalk to neighbouring output ports below -50 dB. The quality and uniformity of the SSCs is demonstrated by fabrication of an 8 x 8 AWG demultiplexer between two SSC arrays placed at input and output ports. We measured an insertion loss between fibres of 4 dB for the central channel of the AWG, which is record low for an InP-based device.

  11. Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

    NASA Astrophysics Data System (ADS)

    Pantzas, Konstantinos; Patriarche, Gilles; Le Bourhis, Eric; Troadec, David; Itawi, Ahmad; Beaudoin, Grégoire; Sagnes, Isabelle; Talneau, Anne

    2013-08-01

    Instrumented nanoindentation is used in conjunction with scanning transmission electron microscopy to evaluate the mechanical resistance at the bonding interface of a 450 nm thick InP membrane bonded oxide-free to Si. Indentation using a Berkovich tip is shown to cause the planes in InP to rotate by as much as 16°. The shear stress resulting from this rotation causes the InP membrane to buckle, forming a debonded blister around the indented zone. The geometry of this blister is used to compute the surface bond energy of InP bonded oxide-free to Si. An average surface bonding energy of 585 mJ m-2 is reported.

  12. Enhancement of intensity-dependent absorption in InP and GaAs at 1.9 microns by doping

    NASA Technical Reports Server (NTRS)

    Li, N.-L.; Bass, M.; Swimm, R.

    1985-01-01

    It is pointed out that the study of intensity-dependent absorption (IDA) in general, and two-photon absorption (TPA), in particular, has suffered from experimental difficulties and inadequate theoretical models. Bass et al. (1979) could improve the experimental situation by making use of laser calorimetry to obtain directly the TPA coefficient of a medium with a high degree of sensitivity. In the present investigation, the employed technique has been used to study the effect of deep level dopants on IDA in InP and GaAs. It is found that the coefficient for IDA is strongly dependent on the presence of Fe in InP and Cr in GaAs. The conducted investigation had the objective to examine the effect of deep level impurities on IDA processes in InP and GaAs. Fe-doped InP and Cr-doped GaAs were compared with undoped crystals.

  13. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

    PubMed

    Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

    2017-10-11

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm(-2)), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and

  14. Workshop on Hydrogen Effects in InP and Related Compounds Held in Lannion, France on 24-25 October 1989

    DTIC Science & Technology

    1989-10-25

    Infrareo and near-edge optical properties of proton implanted InP, GaP and GaAs H. Neumann Karl - Marx U., Leipzing, GDR VIII 16 : 50 E3 Hydrogen vibrations...proton implanted InP, GaP and GaAs H. Neumann Karl - Marx U., Leipzing, GDR 16 50 E3 Hydrogen vibrations in proton-implanted semi- conductors J

  15. [C II] 158-micrometer Observations of a Sample of Late-type Galaxies from the Virgo Cluster

    NASA Technical Reports Server (NTRS)

    Leech, K. J.; Volk, H. J.; Heinrichsen, I.; Hippelein, H.; Metcalfe, L.; Pierini, D.; Popescu, C. C.; Tuffs, R. J.; Xu, C.

    1998-01-01

    We have observed 19 Virgo cluster spiral galaxies with the Long Wavelength Spectrometer (LWS) onboard ESAs Infrared Space Observatory (ISO) obtaining spectral around the (C II) 157.741-micrometer fine structure line.

  16. THE PHYSICS OF PROTOPLANETESIMAL DUST AGGLOMERATES. VI. EROSION OF LARGE AGGREGATES AS A SOURCE OF MICROMETER-SIZED PARTICLES

    SciTech Connect

    Schraepler, Rainer; Blum, Juergen

    2011-06-20

    Observed protoplanetary disks consist of a large amount of micrometer-sized particles. Dullemond and Dominik pointed out for the first time the difficulty in explaining the strong mid-infrared excess of classical T Tauri stars without any dust-retention mechanisms. Because high relative velocities in between micrometer-sized and macroscopic particles exist in protoplanetary disks, we present experimental results on the erosion of macroscopic agglomerates consisting of micrometer-sized spherical particles via the impact of micrometer-sized particles. We find that after an initial phase, in which an impacting particle erodes up to 10 particles of an agglomerate, the impacting particles compress the agglomerate's surface, which partly passivates the agglomerates against erosion. Due to this effect, the erosion halts for impact velocities up to {approx}30 m s{sup -1} within our error bars. For higher velocities, the erosion is reduced by an order of magnitude. This outcome is explained and confirmed by a numerical model. In a next step, we build an analytical disk model and implement the experimentally found erosive effect. The model shows that erosion is a strong source of micrometer-sized particles in a protoplanetary disk. Finally, we use the stationary solution of this model to explain the amount of micrometer-sized particles in the observational infrared data of Furlan et al.

  17. Current impulse response of thin InP p+-i-n+ diodes using full band structure Monte Carlo method

    NASA Astrophysics Data System (ADS)

    You, A. H.; Cheang, P. L.

    2007-02-01

    A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p+-i-n+ diodes with the multiplication region of 0.2μm is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p+-i-n+ diodes with multiplication lengths of 0.05 and 0.2μm using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.

  18. Self-catalyzed growth of pure zinc blende 〈110〉 InP nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Wu, Yao; Ren, Xiaomin

    2015-07-13

    We demonstrate the self-catalyzed vapor-liquid-solid growth of 〈110〉 InP nanowires (NWs) by metal organic chemical vapor deposition. The 〈110〉 InP nanowire is formed via a spontaneous kinking from the original 〈111〉 growth direction, which is attributed to instabilities at the liquid/solid interface caused by a fast In incorporation into the droplet. The NW length before kinking has a nearly linear relationship with the diameter, offering a way to control the NW morphology for different applications. The 〈110〉 nanowire exhibits pure zinc blende crystal structure and a narrower emission linewidth in comparison with a typical 〈111〉 nanowire, demonstrating its potential applications in high-performance electronic and photonic devices.

  19. Dynamics of the cascade capture of electrons by charged donors in GaAs and InP

    SciTech Connect

    Aleshkin, V. Ya. Gavrilenko, L. V.

    2016-08-15

    The times for the cascade capture of an electron by a charged impurity have been calculated for pulsed and stationary excitations of impurity photoconductivity in GaAs and InP. The characteristic capture times under pulsed and continuous excitations are shown to differ noticeably both from each other and from the value given by the Abakumov–Perel–Yassievich formula for a charged impurity concentration greater than 10{sup 10} cm{sup –3}. The cause of this difference has been established. The Abakumov–Perel–Yassievich formula for the cascade capture cross section in the case of stationary excitation has been generalized. The dependences of the cascade capture rate on the charged impurity concentration in GaAs and InP have been found for three temperatures in the case of pulsed excitation.

  20. Luminescent InP Quantum Dots with Tunable Emission by Post-Synthetic Modification with Lewis Acids.

    PubMed

    Stein, Jennifer L; Mader, Elizabeth A; Cossairt, Brandi M

    2016-04-07

    We demonstrate the ability of M(2+) Lewis acids (M = Cd, Zn) to dramatically enhance the photoluminescence quantum yield (PL QY) of InP quantum dots. The addition of cadmium and zinc is additionally found to red- and blue-shift, respectively, the lowest energy absorption and emission of InP quantum dots while maintaining particle size. This treatment results in a facile strategy to post-synthetically tune the luminescence color in these materials. Optical and structural characterization (XRD, TEM, XAS, ICP) have led us to identify the primary mechanism of PL turn-on as surface passivation of phosphorus dangling bonds, affording PL QYs up to 49% without the growth of a type I shell or the addition of HF. This route to PL enhancement and color tuning may prove useful as a standalone treatment or as a complement to shelling strategies.

  1. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

    1993-01-01

    Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

  2. A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Thao, Dinh Nhu

    2017-03-01

    This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.

  3. Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Dadgar, A.; Stenzel, O.; Köhne, L.; Näser, A.; Straßburg, M.; Stolz, W.; Bimberg, D.; Schumann, H.

    1998-12-01

    Ruthenium doping has been successfully applied for the growth of semi-insulating (s.i.) InP. In contrast to the 3d-transition metal (TM) Fe, the isovalent 4d-TM Ru exhibits a four orders of magnitude lower diffusion coefficient and shows no interdiffusion with p-type dopants. Most important, Ru compensates electrons as well as holes, a prerequisite for complete compensation under double injection conditions. The growth of Ru doped InP layers has been investigated using bis( η5-2,4-dimethylpentadienyl)ruthenium(II) for Ru doping, different P-precursors (PH 3, TBP, DTBP) and H 2 or N 2 carrier gas.

  4. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  5. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  6. Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling

    NASA Astrophysics Data System (ADS)

    Furtado, M. T.; Loural, M. S. S.; Sachs, A. C.; Shieh, P. J.

    We report electrochemical CV measurement determination of the conduction band offset ΔEc of Ga 1-xAl xAs:Ga 1-yAl yAs heterojunctions (HJs) with x=0-0.21 and y≈0.4, as well as of In 0.53Ga 0.47As: InP HJs. The samples were grown by liquid phase epitaxy. We have obtained band offset ratios ΔEc/ΔEg≈0.6 and ΔEc/ΔEg≈0.36, respectively, for GaAlAs and InGaAs: InP HJs, where ΔEg is the HJ band gap energy difference. These results are consistent with recent data obtained by other techniques on similar HJs. In addition, the density of fixed interface charges are estimated and are apparently related to the doping of the large band gap layer of the HJ.

  7. The LANDSAT system operated in Brazil by CNPq/INPE - results obtained in the area of mapping and future perspectives

    NASA Technical Reports Server (NTRS)

    Dejesusparada, N. (Principal Investigator); Barbosa, M. N.

    1981-01-01

    The LANDSAT system, operated in the country by CNPg/INPE since 1973, systematically acquires, produces, and distributes both multispectral and panchromatic images obtained through remote sensing satellites to thousands of researchers and technicians involved in the natural resources survey. To cooperate in the solution of national problems, CNPq/INPE is developing efforts in the area of manipulation of those images with the objective of making them useful as planimetric bases for the simple revision of already published maps or for its utilization as basic material in regions not yet reliability mapped. The results obtained from performed tests are presented and the existing limitations are discussed. The new system purchased to handle data from the next series of LANDSAT as well as from MAPSAT and SPOT which will be in operation within the 80's decade, and are designed not only for natural resources survey but also for the solution of cartographic problems.

  8. Seasonal variation of aliphatic amines in marine sub-micrometer particles at the Cape Verde islands

    NASA Astrophysics Data System (ADS)

    Müller, C.; Iinuma, Y.; Karstensen, J.; van Pinxteren, D.; Lehmann, S.; Gnauk, T.; Herrmann, H.

    2009-12-01

    Monomethylamine (MA), dimethylamine (DMA) and diethylamine (DEA) were detected at non-negligible concentrations in sub-micrometer particles at the Cap Verde Atmospheric Observatory (CVAO) located on the island of São Vicente in Cape Verde during algal blooms in 2007. The concentrations of these amines in five stage impactor samples ranged from 0-30 pg m-3 for MA, 130-360 pg m-3 for DMA and 5-110 pg m-3 for DEA during the spring bloom in May 2007 and 2-520 pg m-3 for MA, 100-1400 pg m-3 for DMA and 90-760 pg m-3 for DEA during an unexpected winter algal bloom in December 2007. Anomalously high Saharan dust deposition and intensive ocean layer deepening were found at the Atmospheric Observatory and the associated Ocean Observatory during algal bloom periods. The highest amine concentrations in fine particles (impactor stage 2, 0.14-0.42 μm) indicate that amines are likely taken up from the gas phase into the acidic sub-micrometer particles. The contribution of amines to the organic carbon (OC) content ranged from 0.2-2.5% C in the winter months, indicating the importance of this class of compounds to the carbon cycle in the marine environment. Furthermore, aliphatic amines originating from marine biological sources likely contribute significantly to the nitrogen content in the marine atmosphere. The average contribution of the amines to the detected nitrogen species in sub-micrometer particles can be non-negligible, especially in the winter months (0.1% N-1.5% N in the sum of nitrate, ammonium and amines). This indicates that these smaller aliphatic amines can be important for the carbon and the nitrogen cycles in the remote marine environment.

  9. Spanning From Atoms to Micrometers in Simulations of Contact, Adhesion and Friction

    NASA Astrophysics Data System (ADS)

    Robbins, Mark

    Improved understanding of the forces between realistic solid surfaces is needed to optimize adhesion and friction. Modeling these forces is challenging because they arise from interactions between atoms separated by less than a nanometer, but the number and spatial distribution of these contacting atoms depends on surface roughness and deformation on micrometer and larger scales. There are also strong scale effects in the role of elastic deformations along the surface. The talk will first describe a seamless Greens function (GF) method that allows a full treatment of elastic deformations and atomic contact for micrometer scale surfaces and multibody potentials. Next applications of the method to calculations of the contact area, contact stiffness, adhesion and friction for a range of geometries and interactions will be described. The results can be captured with simple analytic expressions and explain why most contacting surfaces do not adhere. Theoretical and experimental studies of single nanometer-scale asperities show that the frictional shear stress depends strongly on whether surfaces are commensurate. A large constant stress is obtained for identical, aligned crystalline surfaces, but the stress averages to zero in the more common case of incommensurate surfaces. The resulting ultralow friction is called superlubricity and is found in experiments and simulations of small contacts. Our simulations reveal dramatic changes in this behavior because different parts of the surface are able to advance independently as the contact radius increases towards micrometer scales. The friction between identical surfaces drops with increasing radius and then saturates at a low value. The force between incommensurate surfaces saturates at a similar value that can be related to the Peierls stress for dislocation motion at the interface. Studies of multiasperity contacts also show that incoherent motion along the interface can lead to pronounced changes in the macroscopic

  10. A "comb" structure measurement of a micrometer displacement in laser plasma propulsion

    NASA Astrophysics Data System (ADS)

    Zheng, Z. Y.; Gao, L.; Gao, H.; Xing, J.; Wu, X. W.

    2014-08-01

    A "comb" structure of beam intensity distribution is achieved to measure target displacements at the micrometer level in laser plasma propulsion experiments. Compared with single-beam and double-beam detection, the "comb" structure is more suitable for a thin film targets with a velocity lower than 10-2 m/s. Combined with a light-electric monitor, the "comb" structure can be used to measure a velocity range from 10-3 to 1 m/s. Using this "comb" structure, the coupling coefficient of aluminum ablated by nanosecond pulse laser in air is determined and compared. The results indicate that this "comb" structure is an effective experimental approach.

  11. Liquid scanning transmission electron microscopy: Nanoscale imaging in micrometers-thick liquids

    NASA Astrophysics Data System (ADS)

    Schuh, Tobias; de Jonge, Niels

    2014-02-01

    Scanning transmission electron microscopy (STEM) of specimens in liquid is possible using a microfluidic chamber with thin silicon nitride windows. This paper includes an analytic equation of the resolution as a function of the sample thickness and the vertical position of an object in the liquid. The equipment for STEM of liquid specimen is briefly described. STEM provides nanometer resolution in micrometer-thick liquid layers with relevance for both biological research and materials science. Using this technique, we investigated tagged proteins in whole eukaryotic cells, and gold nanoparticles in liquid with time-lapse image series. Possibly future applications are discussed. xml:lang="fr"

  12. Large-scale proton radiography with micrometer spatial resolution using femtosecond petawatt laser system

    SciTech Connect

    Wang, W. P.; Shen, B. F. Zhang, H.; Lu, X. M.; Wang, C.; Liu, Y. Q.; Yu, L. H.; Chu, Y. X.; Li, Y. Y.; Xu, T. J.; Zhang, H.; Zhai, S. H.; Leng, Y. X.; Liang, X. Y.; Li, R. X.; Xu, Z. Z.

    2015-10-15

    An image of dragonfly with many details is obtained by the fundamental property of the high-energy proton source on a femtosecond petawatt laser system. Equal imaging of the dragonfly and high spatial resolution on the micrometer scale are simultaneously obtained. The head, wing, leg, tail, and even the internal tissue structures are clearly mapped in detail by the proton beam. Experiments show that image blurring caused by multiple Coulomb scattering can be reduced to a certain extent and the spatial resolution can be increased by attaching the dragonfly to the RCFs, which is consistent with theoretical assumptions.

  13. Plasticity of Micrometer-Scale Single-Crystals in Compression: A Critical Review (PREPRINT)

    DTIC Science & Technology

    2008-10-01

    AFRL-RX-WP-TP-2008-4326 PLASTICITY OF MICROMETER-SCALE SINGLE- CRYSTALS IN COMPRESSION: A CRITICAL REVIEW (PREPRINT) Michael D. Uchic... Michael D. Uchic and Dennis M. Dimiduk (AFRL/RXLMD) Paul A. Shade (The Ohio State University) 5d. PROJECT NUMBER 4347 5e. TASK NUMBER RG 5f...a critical review    Michael  D. Uchic1, Paul A. Shade2, and Dennis M. Dimiduk1    1 Air Force Research Laboratory, Materials & Manufacturing

  14. Radiation cooler for 10 micrometer wavelength engineering model receiver model no. 7172, serial no. 201

    NASA Technical Reports Server (NTRS)

    1975-01-01

    The design, fabrication, and testing of a radiative cooler are described. This cooler is an engineering model suitable for bench testing in the laboratory as a part of the 10-micrometer wavelength engineering model receiver, and conforms to the standard radiative cooler configuration, except that the inner stage and its support system were redesigned to accommodate the larger, heavier SAT detector. This radiative cooler will cool the detector to cryogenic temperature levels when the receiver is in a space environment or in a suitable thermal vacuum chamber. Equipment specifications are given along with the results of thermal tests, vibration tests, and electrical integrity tests.

  15. Emission from CO2 Around 2.7 Micrometers from Daylight Atmospheres,

    DTIC Science & Technology

    1985-01-21

    RD-R154 ii8 EMISSION FROM C02 AROUND 27 MICROMETERS FROM DAYLIGHT i/i ATMOSPNERES(U) ARCON CORP WALTHAM MR R D SHARMA ET AL. 2i JAN 85 AFGL-TR-85... ARCON Corporation 260 Bear Hill Road Aa Waltham. KA 02154 In S ’( -- ABSTRACT__ A detailed study of the vibrational states of Co in the up atmosphere...14. DATE OF REPORT (Yr.. Al. ay) 1S. PAGE COUNT RER~II FROM _ TO _ | 1985 March 13 17 IS. SUPPLEMENTARY NOTATION * ARCON Corp, 260 Bear Hl= , Waltham

  16. Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography

    NASA Astrophysics Data System (ADS)

    Kim, Hung-Eil; Ahn, Chang-Nam; Kim, KeunYoung; Baik, Ki-Ho

    1995-12-01

    Alternating phase shift mask (PSM) is very effective to memory devices which have highly repeated patterns. In order to apply the alternating PSM to a real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also designed various hard defects to check defect printability on a wafer. Using i-line lithography (0.50 NA, 0.46 sigma) with alternating PSM, we obtained a useful DOF of 1.2 micrometer for a bit line of 256 M DRAM. The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.

  17. Development of a 0.5 micrometer incoherent Doppler lidar for space application

    NASA Technical Reports Server (NTRS)

    Rosenberg, A.; Sroga, J.

    1985-01-01

    This paper describes the current status of a prototype 0.53 micrometer Doppler lidar system under development at RCA. This system consists of a frequency doubled Nd:YAG laser constrained to yield a narrow bandwidth, single frequency pulse, a Fabry-Perot Inteferometer (FPI) using an Image Plane Detector (IPD) to measure the backscatter spectrum for each pulse and a Data Acquisition System (DAS) to sample, store, and analyze the backscattered signal. These individual subsystem components have been assembled and preliminary atmospheric testing has recently begun. Atmospheric backscatter spectra are presented which demonstrate the capabilities of this system to distinguish between return signals from aerosols, molecules, and clouds.

  18. Sub-micrometer transverse beam size diagnostics using optical transition radiation

    NASA Astrophysics Data System (ADS)

    Kruchinin, K.; Aryshev, A.; Karataev, P.; Bolzon, B.; Lefevre, T.; Mazzoni, S.; Shevelev, M.; Boogert, S. T.; Nevay, L. J.; Terunuma, N.; Urakawa, J.

    2014-05-01

    Optical transition radiation (OTR) arising when a relativistic charged particle crosses a boundary between two media with different optical properties is widely used as a tool for diagnostics of particle beams in modern accelerator facilities. The resolution of the beam profile monitors based on OTR depends on different effects of the optical system such as spherical and chromatic aberrations and diffraction. In this paper we present a systematic study of the different optical effects influencing the OTR beam profile monitor resolution. Obtained results have shown that such monitors can be used for sub-micrometer beam profile diagnostics. Further improvements and studies of the monitor are discussed.

  19. Highly Birefringent Microstructure Fiber with Zero Dispersion Wavelength at 0.64 Micrometer

    NASA Astrophysics Data System (ADS)

    Konar, Swapan; Ghorai, Swapan K.; Bhattacharya, Rakhi

    In this article, we have designed a microstructure fiber, which consists of elliptical air holes at the core region. We have investigated its optical properties using finite difference time domain method. The fundamental mode of the proposed microstructure fiber can induce very high birefringenceE It has been realized that the value of birefringence is mainly decided by the shape of the air holes present in the first and second rings. The zero dispersion wavelengths of both fast and slow axes have been shifted to 0E64 micrometer. The proposed birefringent microstructure fiber may be useful in optical communication and sensors.

  20. Design and construction of a coelostat for heterodyne measurements at a wavelength of 10 micrometer

    NASA Astrophysics Data System (ADS)

    Strzoda, Rainer

    1987-01-01

    A heliostat was designed and built as carrier for a 10 micrometer IR heterodyne spectrometer for transmission measurements in the Earth atmosphere for investigations of solar oscillations. The high wavelength resolution allows the determination of line profiles and transition frequencies with high precision. A series of highly resolved ozone absorption spectra lead to the vertical ozone distribution, in good agreement with reference measurements. An improvement of the results is expected after a more precise determination of ozone spectroscopic data from laboratory measurements. The measurement uncertainties are still too high to determine a frequency spectrum of solar oscillations.

  1. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  2. Simultaneous Disordering and Isolation Induced by Ion Mixing in InGaAs/ InP Superlattice Structures

    DTIC Science & Technology

    1992-08-01

    13:1 14 SUBJECT TERMS 15. NUMBER OF PAGES electro-optics Quantum wells electronic devices, components, and subsystems infrared sensors INGAAS/INP 18...photonic devices.’ with Ar ions is useful in fabricating planar waveguides in A commonly used method to induce compositional disor- InGaAs/InP quantum ... well structures. In this work, our deriog in a layered structure is to implant a moderate dose objectives are to study the ion mixing phenomena in

  3. Growth of InP single crystals by liquid encapsulated Czochralski (LEC) using glassy-carbon crucibles

    SciTech Connect

    Oliveira, C.E.M. de; Miskys, C.R.; Carvalho, M.M.G. de

    1996-12-31

    Using a high pressure puller and Glassy-Carbon crucibles, undoped InP single crystals weighing 100g and with 25 mm diameter were grown in the <100> direction. The residual carrier concentration of samples, measure by the Van der Pauw method at 300K, was about 5 {times} 10{sup 15}cm{sup {minus}3}, result as good as those obtained with Quartz crucibles with the advantage that Glassy-Carbon crucibles are fully reusable.

  4. Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics

    NASA Astrophysics Data System (ADS)

    Stadler, B. J. H.; Vaccaro, K.; Davis, A.; Ramseyer, G. O.; Martin, E. A.; Dauplaise, H. M.; Theodore, L. M.; Lorenzo, J. P.

    1996-05-01

    Rare earth-and transition metal-doped thin films of InP, In0.53Ga0.47As, and In0.71Ga0.29As0.58P0.42 were grown by liquid phase epitaxy and evaluated for use in integrated electro-optical and magneto-optical applications, such as waveguides and Faraday rotators. The films were lattice matched to (100) InP substrates, and the transition metal (Mn) and rare earth (Gd, Eu, and Er) doping concentra-tions were between 2.6 × 1018 and 1.5 × 1020 cm-3. The chemical profiles were generally found to be homogeneous by SIMS, although in more highly doped films the rare earths were observed to segregate toward the interfaces. The undoped films were n-type, and the net carrier concentrations in the rare earth-doped (Gd, Eu, Er) films were decreased by an order of magnitude. The Mn-doped films were p-type. Optically, the rare earth dopants were observed to raise the refractive index of the layers at 632.8 nm, and subsequent waveguiding in doped InP layers was observed at 1.3 μm. Although the Faraday rotations of our materials were much less than that of well known oxides, such as yttrium iron garnet, they were sufficient for device applications, and our materials can be much more easily integrated with InP OEIC devices. For example, a 1 cm waveguide would provide the large rotation (45°) required in isolator applica-tions.

  5. Investigation of Schottky Barrier on GaAs and InP Using a Multi-Disciplined Approach

    DTIC Science & Technology

    1990-10-29

    more optimum metal contacts and Schottky barriers on GaAs and for increasing productivity and reliability of monolithic as well as individual GaAs...Since this overall study was motivated by a desire to understand GaAs (as well as InP and other 3-5) interfaces on an atomic level , we recognized...properly manipulating the native defects and impurity doping near the interface. This is supported by results of studies by others as well as

  6. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    NASA Astrophysics Data System (ADS)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  7. Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

    SciTech Connect

    Noda, T.; Mano, T.; Jo, M.; Kawazu, T.; Sakaki, H.

    2012-09-15

    We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs.

  8. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  9. Effects of growth parameters on layer properties for InP and related alloys grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Eguchi, K.; Ohba, Y.; Kushibe, M.; Funamizu, M.; Nakanisi, T.

    1988-12-01

    The effects of group-V and group-III source flow rates on epi-layer properties have been studied for the MOCVD growth of InP and GaInPAs. For InP, the surface morphology and photoluminescence (PL) intensity were almost completely determined by PH 3 flow rate, independent of TMIn flow rate. On the other hand, the PL full width at half maximum (FWHM) and electron mobility were determined by the {V}/{III} ratio. The carrier concentration of Se-doped InP was unchanged by both PH 3 and TMIn flow rate, differing from that of Se-doped GaAs. The composition ratio of As to P for GaInPAs was mainly determined by the flow ratio of AsH 3 to PH 3, but affected by the total group-V flow rate (AsH 3+PH 3) and by the group-III alloy composition. It was found that the absolute PH 3 pressure in the vapor phase was one of the most important growth parameters in determining the epi-layer properties.

  10. The Trp53-Trp53inp1-Tnfrsf10b Pathway Regulates the Radiation Response of Mouse Spermatogonial Stem Cells

    PubMed Central

    Ishii, Kei; Ishiai, Masamichi; Morimoto, Hiroko; Kanatsu-Shinohara, Mito; Niwa, Ohtsura; Takata, Minoru; Shinohara, Takashi

    2014-01-01

    Summary Germ cells are thought to exhibit a unique DNA damage response that differs from that of somatic stem cells, and previous studies suggested that Trp53 is not involved in the survival of spermatogonial stem cells (SSCs) after irradiation. Here, we report a critical role for the Trp53-Trp53inp1-Tnfrsf10b pathway during radiation-induced SSC apoptosis. Spermatogonial transplantation revealed that Trp53 deficiency increased the survival of SSCs after irradiation. Although Bbc3, a member of the intrinsic apoptotic pathway, was implicated in apoptosis of germ and somatic stem cells, Bbc3 depletion inhibited apoptosis in committed spermatogonia, but not in SSCs. In contrast, inhibition of Tnfrsf10b, an extrinsic apoptosis regulator, rescued SSCs. Tnfrsf10b, whose deficiency protected SSCs, was upregulated by Trp53inp1 upon irradiation. These results suggest that the Trp53-Trp53inp1-Tnfrsf10b pathway responds to genotoxic damage in SSCs and that stem and progenitor cells exhibit distinct DNA damage responses in self-renewing tissue. PMID:25358794

  11. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

    PubMed

    Joyce, Hannah J; Docherty, Callum J; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2013-05-31

    We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵  cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

  12. Surface Dipole Formation and Lowering of the Work Function by Cs Adsorption on InP(100) Surface

    SciTech Connect

    Sun, Y.; Liu, Z.; Pianetta, P.

    2007-06-08

    The Cs adsorption on InP(100) surface is studied with Synchrotron Radiation Photoelectron Spectroscopy. The charge transfer from Cs to the InP substrate is observed from the Cs induced In4d and P2p components, and this charge transfer results in surface dipole formation and lowering of the work function. The Cs4d intensity saturates at coverage of one monolayer (ML). However, a break point is observed at 0.5 ML, which coincides with the achievement of the minimum work function. This break point is due to the different vertical placement of the first and the second half monolayer of Cs atoms. Based on this information, a simple bi-layer structure for the Cs layer is presented. This bi-layer structure is consistent with the behavior of the charge transfer from the Cs to the InP substrate at different Cs coverages. This, in turn, explains why the work function decreases to a minimum at 0.5 ML of Cs and remains almost constant beyond this coverage. The depolarization of the surface dipoles is attributed to the saturation of charge transfer to the surface In atoms and the polarization of the Cs atoms in the second half monolayer induced by the positively charged Cs atoms in the first half monolayer.

  13. Hydrogen evolution at a Pt-modified InP photoelectrode: Improvement of current-voltage characteristics by HCl etching

    SciTech Connect

    Kobayashi, Hikaru; Mizuno, Fumiaki; Nakato, Yoshihiro; Tsubomura, Hiroshi )

    1991-01-24

    Hydrogen photoevolution at p-InP electrodes coated with platinum and palladium has been studied. Efficient and stable solar to chemical energy conversion has been achieved after etching the electrodes with concentrated HCl. The current-voltage (I-V) behavior of the as-prepared electrode covered with a continuous Pt layer is poor, due probably to the presence of defect states in InP. The photocurrent density of this electrode decreases with time under illumination, presumably due to an increase in the defect density. After etching of the electrode with concentrated HCl, the barrier height is increased to 1.0 V, and the I-V characteristics are improved remarkably, showing no degradation under illumination. SEM, XPS, and AES analyses show that the concentrated HCl solution dissolves the InP substrate in the InP/Pt interfacial region, and simultaneously part of the Pt is removed from the InP surface. The I-V characteristics of the Pt-deposited electrodes are unaffected by hydrogen or nitrogen bubbling and the reason is discussed.

  14. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

    PubMed

    Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

    2016-10-12

    The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

  15. Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

    NASA Technical Reports Server (NTRS)

    Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

    1990-01-01

    Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

  16. Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

    NASA Astrophysics Data System (ADS)

    Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

    Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

  17. Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

    1989-01-01

    Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

  18. Au NPs@MoS2 Sub-Micrometer Sphere-ZnO Nanorod Hybrid Structures for Efficient Photocatalytic Hydrogen Evolution with Excellent Stability.

    PubMed

    Guo, Shaohui; Li, Xuanhua; Zhu, Jinmeng; Tong, Tengteng; Wei, Bingqing

    2016-11-01

    MoS2 shows promising applications in photocatalytic water splitting, owing to its uniquely optical and electric properties. However, the insufficient light absorption and lack of performance stability are two crucial issues for efficient application of MoS2 nanomaterials. Here, Au nanoparticles (NPs)@MoS2 sub-micrometer sphere-ZnO nanorod (Au NPs@MoS2 -ZnO) hybrid photocatalysts have been successfully synthesized by a facile process combining the hydrothermal method and seed-growth method. Such photocatalysts exhibit high efficiency and excellent stability for hydrogen production via multiple optical-electrical effects. The introduction of Au NPs to MoS2 sub-micrometer spheres forming a core-shell structure demonstrates strong plasmonic absorption enhancement and facilitates exciton separation. The incorporation of ZnO nanorods to the Au NPs@MoS2 hybrids further extends the light absorption to a broader wavelength region and enhances the exciton dissociation. In addition, mutual contacts between Au NPs (or ZnO nanorods) and the MoS2 spheres effectively protect the MoS2 nanosheets from peeling off from the spheres. More importantly, efficiently multiple exciton separations help to restrain the MoS2 nanomaterials from photocorrosion. As a result, the Au@MoS2 -ZnO hybrid structures exhibit an excellent hydrogen gas evolution (3737.4 μmol g(-1) ) with improved stability (91.9% of activity remaining) after a long-time test (32 h), which is one of the highest photocatalytic activities to date among the MoS2 based photocatalysts. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. TP53INP2/DOR, a mediator of cell autophagy, promotes rDNA transcription via facilitating the assembly of the POLR1/RNA polymerase I preinitiation complex at rDNA promoters.

    PubMed

    Xu, Yinfeng; Wan, Wei; Shou, Xin; Huang, Rui; You, Zhiyuan; Shou, Yanhong; Wang, Lingling; Zhou, Tianhua; Liu, Wei

    2016-07-02

    Cells control their metabolism through modulating the anabolic and catabolic pathways. TP53INP2/DOR (tumor protein p53 inducible nuclear protein 2), participates in cell catabolism by serving as a promoter of autophagy. Here we uncover a novel function of TP53INP2 in protein synthesis, a major biosynthetic and energy-consuming anabolic process. TP53INP2 localizes to the nucleolus through its nucleolar localization signal (NoLS) located at the C-terminal domain. Chromatin immunoprecipitation (ChIP) assays detected an association of TP53INP2 with the ribosomal DNA (rDNA), when exclusion of TP53INP2 from the nucleolus repressed rDNA promoter activity and the production of ribosomal RNA (rRNA) and proteins. The removal of TP53INP2 also impaired the association of the POLR1/RNA polymerase I preinitiation complex (PIC) with rDNA. Further, TP53INP2 interacts directly with POLR1 PIC, and is required for the assembly of the complex. These data indicate that TP53INP2 promotes ribosome biogenesis through facilitating rRNA synthesis at the nucleolus, suggesting a dual role of TP53INP2 in cell metabolism, assisting anabolism on the nucleolus, and stimulating catabolism off the nucleolus.

  20. Filtration of bioaerosols using a granular metallic filter with micrometer-sized collectors

    SciTech Connect

    Damit, Brian E; Bischoff, Brian L; Phelps, Tommy Joe; Wu, Dr. Chang-Yu; Cheng, Mengdawn

    2014-01-01

    Several experimental studies with granular bed filters composed of micrometer-sized spherical or sintered metallic granules have demonstrated their use in aerosol filtration. However, the effectiveness of these metallic membrane filters against bioaerosols has not been established. In this work, the filtration efficiency and filter quality of these filters against airborne B. subtilis endospore and MS2 virus were determined as a function of face velocity and loading time. In experiments, a physical removal efficiency greater than 99.9% and a viable removal efficiency of greater than 5-log were observed for both bacterial spore and viral aerosols. A lower face velocity produced both higher collection efficiency and filter quality for virus but was not statistically significant for spore filtration. Although the filter had high filtration efficiency of the test bioaerosols, the filter's high pressure drop resulted in a low filter quality (0.25-0.75 kPa- 1). Overall, filters with micrometer-sized collectors capture bioaerosols effectively but their applications in aerosol filtration may be limited by their high pressure drop.

  1. Portable 4.6 Micrometers Laser Absorption Spectrometer for Carbon Monoxide Monitoring and Fire Detection

    NASA Technical Reports Server (NTRS)

    Briggs, Ryan M.; Frez, Clifford; Forouhar, Siamak; May, Randy D.; Ruff, Gary A.

    2013-01-01

    The air quality aboard manned spacecraft must be continuously monitored to ensure crew safety and identify equipment malfunctions. In particular, accurate real-time monitoring of carbon monoxide (CO) levels helps to prevent chronic exposure and can also provide early detection of combustion-related hazards. For long-duration missions, environmental monitoring grows in importance, but the mass and volume of monitoring instruments must be minimized. Furthermore, environmental analysis beyond low-Earth orbit must be performed in-situ, as sample return becomes impractical. Due to their small size, low power draw, and performance reliability, semiconductor-laser-based absorption spectrometers are viable candidates for this purpose. To reduce instrument form factor and complexity, the emission wavelength of the laser source should coincide with strong fundamental absorption lines of the target gases, which occur in the 3 to 5 micrometers wavelength range for most combustion products of interest, thereby reducing the absorption path length required for low-level concentration measurements. To address the needs of current and future NASA missions, we have developed a prototype absorption spectrometer using a semiconductor quantum cascade laser source operating near 4.6 micrometers that can be used to detect low concentrations of CO with a compact single-pass absorption cell. In this study, we present the design of the prototype instrument and report on measurements of CO emissions from the combustion of a variety of aerospace plastics.

  2. Portable 4.6 Micrometers Laser Absorption Spectrometer for Carbon Monoxide Monitoring and Fire Detection

    NASA Technical Reports Server (NTRS)

    Briggs, Ryan M.; Frez, Clifford; Forouhar, Siamak; May, Randy D.; Ruff, Gary A.

    2013-01-01

    The air quality aboard manned spacecraft must be continuously monitored to ensure crew safety and identify equipment malfunctions. In particular, accurate real-time monitoring of carbon monoxide (CO) levels helps to prevent chronic exposure and can also provide early detection of combustion-related hazards. For long-duration missions, environmental monitoring grows in importance, but the mass and volume of monitoring instruments must be minimized. Furthermore, environmental analysis beyond low-Earth orbit must be performed in-situ, as sample return becomes impractical. Due to their small size, low power draw, and performance reliability, semiconductor-laser-based absorption spectrometers are viable candidates for this purpose. To reduce instrument form factor and complexity, the emission wavelength of the laser source should coincide with strong fundamental absorption lines of the target gases, which occur in the 3 to 5 micrometers wavelength range for most combustion products of interest, thereby reducing the absorption path length required for low-level concentration measurements. To address the needs of current and future NASA missions, we have developed a prototype absorption spectrometer using a semiconductor quantum cascade laser source operating near 4.6 micrometers that can be used to detect low concentrations of CO with a compact single-pass absorption cell. In this study, we present the design of the prototype instrument and report on measurements of CO emissions from the combustion of a variety of aerospace plastics.

  3. Nanometer-resolution electron microscopy through micrometers-thick water layers.

    PubMed

    de Jonge, Niels; Poirier-Demers, Nicolas; Demers, Hendrix; Peckys, Diana B; Drouin, Dominique

    2010-08-01

    Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 microm. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid and in materials science to study the interaction of solid:liquid interfaces at the nanoscale. Published by Elsevier B.V.

  4. In Vivo Penetration Mechanics and Mechanical Properties of Mouse Brain Tissue at Micrometer Scales

    PubMed Central

    Sharp, Andrew A.; Ortega, Alicia M.; Restrepo, Diego; Curran-Everett, Douglas; Gall, Ken

    2010-01-01

    Substantial advancement in the understanding of the neuronal basis of behavior and the treatment of neurological disorders has been achieved via the implantation of various devices into the brain. To design and optimize the next generation of neuronal implants while striving to minimize tissue damage, it is necessary to understand the mechanics of probe insertion at relevant length scales. Unfortunately, a broad based understanding of brain-implant interactions at the necessary micrometer scales is largely missing. This paper presents a generalizable description of the micrometer scale penetration mechanics and material properties of mouse brain tissue in vivo. Cylindrical stainless steel probes were inserted into the cerebral cortex and olfactory bulb of mice. The effects of probe size, probe geometry, insertion rate, insertion location, animal age and the presence of the dura and pia on the resulting forces were measured continuously throughout probe insertion and removal. Material properties (modulus, cutting force, and frictional force) were extracted using mechanical analysis. The use of rigid, incompressible, cylindrical probes allows for a general understanding of how probe design and insertion methods influence the penetration mechanics of brain tissue in vivo that can be applied to the quantitative design of most future implantable devices. PMID:19224718

  5. Absolute distance measurement with micrometer accuracy using a Michelson interferometer and the iterative synthetic wavelength principle.

    PubMed

    Alzahrani, Khaled; Burton, David; Lilley, Francis; Gdeisat, Munther; Bezombes, Frederic; Qudeisat, Mohammad

    2012-02-27

    We present a novel system that can measure absolute distances of up to 300 mm with an uncertainty of the order of one micrometer, within a timeframe of 40 seconds. The proposed system uses a Michelson interferometer, a tunable laser, a wavelength meter and a computer for analysis. The principle of synthetic wave creation is used in a novel way in that the system employs an initial low precision estimate of the distance, obtained using a triangulation, or time-of-flight, laser system, or similar, and then iterates through a sequence of progressively smaller synthetic wavelengths until it reaches micrometer uncertainties in the determination of the distance. A further novel feature of the system is its use of Fourier transform phase analysis techniques to achieve sub-wavelength accuracy. This method has the major advantages of being relatively simple to realize, offering demonstrated high relative precisions better than 5 × 10(-5). Finally, the fact that this device does not require a continuous line-of-sight to the target as is the case with other configurations offers significant advantages.

  6. Novel Sample Preparation Technique To Improve Spectromicroscopic Analyses of Micrometer-Sized Particles.

    PubMed

    Höschen, Carmen; Höschen, Till; Mueller, Carsten W; Lugmeier, Johann; Elgeti, Stefan; Rennert, Thilo; Kögel-Knabner, Ingrid

    2015-08-18

    Microscale processes occurring at biogeochemical interfaces in soils and sediments have fundamental impacts on phenomena at larger scales. To obtain the organo-mineral associations necessary for the study of biogeochemical interfaces, bulk samples are usually fractionated into microaggregates or micrometer-sized single particles. Such fine-grained mineral particles are often prepared for nanoscale secondary ion mass spectroscopy (NanoSIMS) investigations by depositing them on a carrier. This introduces topographic differences, which can strongly affect local sputtering efficiencies. Embedding in resin causes undesired C impurities. We present a novel method for preparing polished cross-sections of micrometer-sized primary soil particles that overcomes the problems of topography and C contamination. The particles are coated with a marker layer, embedded, and well-polished. The interpretation of NanoSIMS data is assisted by energy-dispersive X-ray spectroscopy on cross-sections prepared by a focused ion beam. In the cross-sections, organic assemblages on the primary soil particles become visible. This novel method significantly improves the quality of NanoSIMS measurements on grainy mineral samples, enabling better characterization of soil biogeochemical interfaces. In addition, this sample preparation technique may also improve results from other (spectro-) microscopic techniques.

  7. High Voc, 1300 ohm cm, 10 to 25 micrometer thick, single crystal silicon membrane, BCA cells

    NASA Astrophysics Data System (ADS)

    Mandelkorn, Joseph; Eisenberg, Naphtali; Broder, Jack

    1300 ohm-cm, 10-25 micron-thick, single-crystal base, silicon membrane BCA cells with 4-mil-thick, highly doped, epitaxial layer supports were made. The active area value of Isc achieved for 10-micron membranes was 31 mA/sq cm for AM1 sunlight intensity; values of Voc were 0.55 V for AM1 illumination, 064 V for 137-mW/sq cm concentrated sunlight, and 0.73 V for 70 x AM1 concentrated sunlight, using -1.5 mV/deg C Voc temperature coefficients. Data on results of high-energy particle bombardment of silicon solar cells of various resistivities and on bombardment results of BSF 10 ohm-cm cells of various thicknesses are reviewed. From analysis of these and other data, it is predicted that the cells are the most radiation-damage-resistant silicon cells ever made and that they are superior to GaAs and InP cells in both high-temperature and radiation-damage environments.

  8. Realistic multiband k .p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase

    NASA Astrophysics Data System (ADS)

    Faria Junior, Paulo E.; Campos, Tiago; Bastos, Carlos M. O.; Gmitra, Martin; Fabian, Jaroslav; Sipahi, Guilherme M.

    2016-06-01

    Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite reports in the literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for instance, under quantum confinement effects. In order to address this deficiency, in this study we calculate the ab initio band structure of bulk InAs and InP in the wurtzite phase and develop an 8 ×8 k .p Hamiltonian to describe the energy bands around the Γ point. We show that our k .p model is robust and can be fitted to describe the important features of the ab initio band structure. The correct description of the spin-splitting effects that arise due to the lack of inversion symmetry in wurtzite crystals is obtained with the k -dependent spin-orbit term in the Hamiltonian, often neglected in the literature. All the energy bands display a Rashba-like spin texture for the in-plane spin expectation value. We also provide the density of states and the carrier density as functions of the Fermi energy. Alternatively, we show an analytical description of the conduction band, valid close to the Γ point. The same fitting procedure is applied to the 6 ×6 valence band Hamiltonian. However, we find that the most reliable approach is the 8 ×8 k .p Hamiltonian for both compounds. The k .p Hamiltonians and parameter sets that we develop in this paper provide a reliable theoretical framework that can be easily applied to investigate electronic, transport, optical, and spin properties of InAs- and InP-based nanostructures.

  9. A simple route to synthesize manganese germanate nanorods

    SciTech Connect

    Pei, L.Z. Yang, Y.; Yuan, C.Z.; Duan Taike; Zhang Qianfeng

    2011-06-15

    Manganese germanate nanorods have been synthesized by a simple route using germanium dioxide and manganese acetate as the source materials. X-ray diffraction observation shows that the nanorods are composed of orthorhombic and monoclinic manganese germanate phases. Scanning electron microscopy and transmission electron microscopy observations display that the manganese germanate nanorods have flat tips with the length of longer than 10 micrometers and diameter of 60-350 nm, respectively. The role of the growth conditions on the formation of the manganese germanate nanorods shows that the proper selection and combination of the growth conditions are the key factor for controlling the formation of the manganese germanate nanorods. The photoluminescence spectrum of the manganese germanate nanorods exhibits four fluorescence emission peaks centered at 422 nm, 472 nm, 487 nm and 530 nm showing the application potential for the optical devices. - Research Highlights: {yields} Manganese germanate nanorods have been synthesized by simple hydrothermal process. {yields} The formation of manganese germanate nanorods can be controlled by growth conditions. {yields} Manganese germanate nanorods exhibit good PL emission ability for optical device.

  10. Aerosol measurements during COPE: composition, size, and sources of CCN and INPs at the interface between marine and terrestrial influences

    NASA Astrophysics Data System (ADS)

    Taylor, Jonathan W.; Choularton, Thomas W.; Blyth, Alan M.; Flynn, Michael J.; Williams, Paul I.; Young, Gillian; Bower, Keith N.; Crosier, Jonathan; Gallagher, Martin W.; Dorsey, James R.; Liu, Zixia; Rosenberg, Philip D.

    2016-09-01

    Heavy rainfall from convective clouds can lead to devastating flash flooding, and observations of aerosols and clouds are required to improve cloud parameterisations used in precipitation forecasts. We present measurements of boundary layer aerosol concentration, size, and composition from a series of research flights performed over the southwest peninsula of the UK during the COnvective Precipitation Experiment (COPE) of summer 2013. We place emphasis on periods of southwesterly winds, which locally are most conducive to convective cloud formation, when marine air from the Atlantic reached the peninsula. Accumulation-mode aerosol mass loadings were typically 2-3 µg m-3 (corrected to standard cubic metres at 1013.25 hPa and 273.15 K), the majority of which was sulfuric acid over the sea, or ammonium sulfate inland, as terrestrial ammonia sources neutralised the aerosol. The cloud condensation nuclei (CCN) concentrations in these conditions were ˜ 150-280 cm-3 at 0.1 % and 400-500 cm-3 at 0.9 % supersaturation (SST), which are in good agreement with previous Atlantic measurements, and the cloud drop concentrations at cloud base ranged from 100 to 500 cm-3. The concentration of CCN at 0.1 % SST was well correlated with non-sea-salt sulfate, meaning marine sulfate formation was likely the main source of CCN. Marine organic aerosol (OA) had a similar mass spectrum to previous measurements of sea spray OA and was poorly correlated with CCN. In one case study that was significantly different to the rest, polluted anthropogenic emissions from the southern and central UK advected to the peninsula, with significant enhancements of OA, ammonium nitrate and sulfate, and black carbon. The CCN concentrations here were around 6 times higher than in the clean cases, and the cloud drop number concentrations were 3-4 times higher. Sources of ice-nucleating particles (INPs) were assessed by comparing different parameterisations used to predict INP concentrations, using measured

  11. Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth

    NASA Astrophysics Data System (ADS)

    Junesand, Carl; Hu, Chen; Wang, Zhechao; Metaferia, Wondwosen; Dagur, Pritesh; Pozina, Galia; Hultman, Lars; Lourdudoss, Sebastian

    2012-09-01

    Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.

  12. Fluoride dielectric films on InP for metal-insulator-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Paul, T. K.; Bose, D. N.

    1990-04-01

    This paper describes the characteristics of thin fluoride films on InP which are used as dielectric for metal-insulator-semiconductor (MIS) devices. Films of Ba1-xSrxF2 (x=0.0, 0.5, 0.83, and 1.0) were deposited by sublimation of mixtures of BaF2 and SrF2 in vacuum under 10-5 Torr pressure. The composition of the films was deduced from x-ray diffraction and energy dispersion analysis by x-ray studies. The electrical activation energies of the films determined between 120 and 300 K were found to be 3.5-22.0×10-3 eV , depending on composition and temperature. The resistivity of the films was in the range of 5.0×1011 to 5.0×1012 Ω cm with the breakdown fields greater than 5.0×105 V cm-1 . The interface state density obtained was as low as 5×1010 cm-2 eV-1 with annealed BaF2 films. Scanning electron microscope studies showed that annealing caused development of cracks resulting in decreased film resistivity. Auger studies gave evidence of broadening of the interface and outdiffusion from the substrate due to annealing.

  13. Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform.

    PubMed

    Juvert, Joan; Zhang, Shuailong; Eddie, Iain; Mitchell, Colin J; Reed, Graham T; Wilkinson, James S; Kelly, Anthony; Neale, Steven L

    2016-08-08

    The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4° and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular.

  14. Heteroepitaxial InP, and ultrathin, directly glassed, GaAs 3-5 solar cells

    NASA Technical Reports Server (NTRS)

    Hardingham, C. M.; Cross, T. A.

    1993-01-01

    The commercial application of Indium Phosphide solar cells in practical space missions is crucially dependent upon achieving a major cost reduction which could be offered by heteroepitaxy on cheaper, more rugged substrates. Furthermore, significant mass reduction, compatibility with mechanically stacked multijunction cells, and elimination of the current loss through glue discoloration, is possible in III-V solar cells by the development of ultrathin, directly glassed cells. The progress of a UK collaborative program to develop high efficiency, homojunction InP solar cells, grown by MOCVD on Si substrates, is described. Results of homoepitaxial cells (is greater than 17 percent 1 Sun AM0) are presented, together with progress in achieving low dislocation density heteroepitaxy. Also, progress in a UK program to develop ultrathin directly-glassed GaAs cells is described. Ultrathin (5 micron) GaAs cells, with 1 Sun AM0 efficiencies up to 19.1 percent, are presented, together with progress in achieving a direct (adhesive-less) bond between the cell and coverglass. Consequential development to, for example, cell grids, are also discussed.

  15. Multi-junction Thermophotovoltaic Converters Based on Dilute Nitride Superlattices Lattice Matched to InP

    NASA Astrophysics Data System (ADS)

    Bhusal, L.; Freundlich, A.

    2007-02-01

    Recently we have shown that by adjusting the thickness of individual sublayers and the nitrogen composition, strain balanced GaAs1-xNx/InAs1-yNy superlattices can be designed to be both lattice matched to InP and have effective bangaps in the desirable 0.4-0.65 eV range. The effect of insertion of such superlattice-like alloy within the intrinsic region of a 0.74 eV InGaAs p-i-n diode was also evaluated and it was shown that such a single junction device exhibits a photovoltaic response comparable to its lattice-mismatched 0.55 eV-InGaAs counterpart. In this work we have extended the approach to multi-junctions devices. Here two or more subcells with different effective bandgaps for the superlattice region are monolithically series connected. Maximum power output and performance of double, triple and quadruple junction TPV cells are evaluated as a function of the superlattice/cell design for a relatively low temperature black body emitters (1350K). The study stresses the potential of the proposed approach for a significant enhancement of TPV converter performance.

  16. Tunable optical filters for in-plane integration on InP MEMS platform

    NASA Astrophysics Data System (ADS)

    Datta, M.; McGee, J.; Pruessner, M. W.; Amarnath, K.; Kanakaraju, S.; Ghodssi, R.

    2005-07-01

    We have demonstrated a planar waveguide-based tunable integrated optical filter in indium phosphide (InP) with on-chip micro-electro-mechanical (MEMS) actuation. An air-gap Fabry-Perot resonant microcavity is formed between two waveguides, whose facets have monolithically integrated high-reflectivity multilayer InP/air Distributed Bragg Reflector (DBR) mirrors. A suspended beam electrostatic microactuator attached to one of the DBR mirrors modulates the microcavity length, resulting in a tunable filter. The DBR mirrors provide a broad high-reflectivity spectrum, within which the transmission wavelength can be tuned. The in-plane configuration of the filter enables easy integration with other active and passive waveguide-based optoelectronic devices on a chip and simplifies fiber alignment. Experimental results from the first generation of tunable optical filters are presented. The microfabricated filter exhibited a resonant wavelength shift of 12nm (1513-1525nm) at a low operating voltage of 7V. A full-width-half-maximum (FWHM) of 33 nm was experimentally observed, and the quality factor was calculated to be 46. Several improvements of the MEMS actuator, waveguide, and optical cavity design for the future devices are discussed.

  17. Activation energy and capture cross section of majority carrier traps in Zn doped InP

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Williams, Wendell

    1993-01-01

    Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

  18. Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1991-01-01

    Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.

  19. Doping evaluation of InP nanowires for tandem junction solar cells.

    PubMed

    Lindelöw, F; Heurlin, M; Otnes, G; Dagytė, V; Lindgren, D; Hultin, O; Storm, K; Samuelson, L; Borgström, M

    2016-02-12

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  20. Doping evaluation of InP nanowires for tandem junction solar cells

    NASA Astrophysics Data System (ADS)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.