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Sample records for synthesize inp micrometer

  1. Efficient rapid microwave-assisted route to synthesize InP micrometer hollow spheres

    SciTech Connect

    Zheng Xiuwen Hu Qitu; Sun Chuansheng

    2009-01-08

    The efficiencies of two methods of synthesizing InP micro-scale hollow spheres are compared via the analogous solution-liquid-solid (ASLS) growth mechanism, either through a traditional solvothermal procedure, or via a microwave-assisted method. Scanning electronic microscopy (SEM) images show that most of the as-grown samples are micrometer hollow spheres, which indicates the efficiency of both methods. For traditional solvothermal route, long time (10 h) is necessary to obtain the desired samples, however, for the microwave-assisted route, 30 min is enough for hollow spherical products. An optimal choice of microwave irradiating time allows reducing the reaction time from hours to minutes. The proposed ASLS growth mechanism has also been discussed in detail.

  2. Efficient removal of heavy metal ions with biopolymer template synthesized mesoporous titania beads of hundreds of micrometers size.

    PubMed

    Wu, Na; Wei, Huanhuan; Zhang, Lizhi

    2012-01-03

    We demonstrated that mesoporous titania beads of uniform size (about 450 μm) and high surface area could be synthesized via an alginate biopolymer template method. These mesoporous titania beads could efficiently remove Cr(VI), Cd(II), Cr(III), Cu(II), and Co(II) ions from simulated wastewater with a facile subsequent solid-liquid separation because of their large sizes. We chose Cr(VI) removal as the case study and found that each gram of these titania beads could remove 6.7 mg of Cr(VI) from simulated wastewater containing 8.0 mg·L(-1) of Cr(VI) at pH = 2.0. The Cr(VI) removal process was found to obey the Langmuir adsorption model and its kinetics followed pseudo-second-order rate equation. The Cr(VI) removal mechanism of titania beads might be attributed to the electrostatic adsorption of Cr(VI) ions in the form of negatively charged HCrO(4)(-) by positively charged TiO(2) beads, accompanying partial reduction of Cr(VI) to Cr(III) by the reductive surface hydroxyl groups on the titania beads. The used titania beads could be recovered with 0.1 mol·L(-1) of NaOH solution. This study provides a promising micro/nanostructured adsorbent with easy solid-liquid separation property for heavy metal ions removal.

  3. Filar Micrometer

    NASA Astrophysics Data System (ADS)

    Argyle, Bob; Argyle, R. W.

    The measurement of double stars is central to the theme of this book and there are many ways of doing this, but this chapter is dedicated to the use of the filar micrometer which has been used seriously since the time of William Herschel. For a thorough discussion of the history and development of the filar micrometer see the paper by Brooks(1991). Much of our knowledge of longer period visual binaries depends on micrometric measures over the last 200 years. The filar micrometer is by far the most well-known device for measuring double stars. Its design remains largely the same as the original instrument which was first applied to an astronomical telescope by the Englishman William Gascoigne (ca. 1620-1644) in the late 1630s. The aim is to use fine threads located in the focal plane of the telescope lens or mirror to measure the relative position of the fainter component of a double star with respect to the brighter, regarding the latter as fixed for this purpose. This is done by the measurement of the angle which the line joining the two stars makes with the N reference in the eyepiece and the angular separation of the fainter star (B) from the brighter (A) in seconds of arc. These quantities are usually known as theta ( θ ) and rho ( ρ ) respectively and are defined in Chap. 1 .

  4. InP Materials

    DTIC Science & Technology

    1981-09-30

    profile of the resistance-heated clamshell furnace. The ampoule is fabricated with the large end open, then etched in aqua regia , vacuum baked at - 1000C...NOTES None 19. K EY WORDS (Continue on reverse side if necessary and idenliy by block number) Inp crystal growth InP Synthesis 70. ABSTRACT (Conlinw on

  5. When is an INP not an INP?

    NASA Astrophysics Data System (ADS)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  6. Optical contact micrometer

    DOEpatents

    Jacobson, Steven D.

    2014-08-19

    Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

  7. Traveling digital counters for micrometers

    NASA Technical Reports Server (NTRS)

    Haley, C. T.; Moore, J. M.

    1973-01-01

    Five digit micrometer readings are made directly and quickly with no loss of precision. It is virtually impossible for micrometer to be misread. Digitized micrometer can also be used for reptitive measurements.

  8. Automatic readout micrometer

    DOEpatents

    Lauritzen, T.

    A measuring system is described for surveying and very accurately positioning objects with respect to a reference line. A principle use of this surveying system is for accurately aligning the electromagnets which direct a particle beam emitted from a particle accelerator. Prior art surveying systems require highly skilled surveyors. Prior art systems include, for example, optical surveying systems which are susceptible to operator reading errors, and celestial navigation-type surveying systems, with their inherent complexities. The present invention provides an automatic readout micrometer which can very accurately measure distances. The invention has a simplicity of operation which practically eliminates the possibilities of operator optical reading error, owning to the elimination of traditional optical alignments for making measurements. The invention has an extendable arm which carries a laser surveying target. The extendable arm can be continuously positioned over its entire length of travel by either a coarse of fine adjustment without having the fine adjustment outrun the coarse adjustment until a reference laser beam is centered on the target as indicated by a digital readout. The length of the micrometer can then be accurately and automatically read by a computer and compared with a standardized set of alignment measurements. Due to its construction, the micrometer eliminates any errors due to temperature changes when the system is operated within a standard operating temperature range.

  9. Automatic readout micrometer

    DOEpatents

    Lauritzen, Ted

    1982-01-01

    A measuring system is disclosed for surveying and very accurately positioning objects with respect to a reference line. A principal use of this surveying system is for accurately aligning the electromagnets which direct a particle beam emitted from a particle accelerator. Prior art surveying systems require highly skilled surveyors. Prior art systems include, for example, optical surveying systems which are susceptible to operator reading errors, and celestial navigation-type surveying systems, with their inherent complexities. The present invention provides an automatic readout micrometer which can very accurately measure distances. The invention has a simplicity of operation which practically eliminates the possibilities of operator optical reading error, owning to the elimination of traditional optical alignments for making measurements. The invention has an extendable arm which carries a laser surveying target. The extendable arm can be continuously positioned over its entire length of travel by either a coarse or fine adjustment without having the fine adjustment outrun the coarse adjustment until a reference laser beam is centered on the target as indicated by a digital readout. The length of the micrometer can then be accurately and automatically read by a computer and compared with a standardized set of alignment measurements. Due to its construction, the micrometer eliminates any errors due to temperature changes when the system is operated within a standard operating temperature range.

  10. InP materials/cell fabrication

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.

    1987-01-01

    The main points of discussion, conclusions and recommendations of a workshop on InP materials and cell fabrication are given. The importance of assessing the quality of p-Inp crystals supplied by different vendors, back contacts to solar cells, junction formation, energy conversion efficiency, testing for radiation resistance, and future develpments were among the topics discussed.

  11. Airborne astronomy with a 150 micrometer - 500 micrometer heterodyne spectrometer

    NASA Technical Reports Server (NTRS)

    Betz, A. L.

    1991-01-01

    This report summarizes work done under NASA Grant NAG2-254 awarded to the University of California. The project goal was to build a far-infrared heterodyne spectrometer for NASA's Kuiper Airborne Observatory (KAO), and to use this instrument to observe atomic and molecular spectral lines from the interstellar medium. This goal was successfully achieved; the spectrometer is now in routine use aboard the KAO. Detections of particular note have been the 370 micrometers line of neutral atomic carbon, the 158 micrometers transition of ionized carbon, many of the high-J rotational lines of 12CO and 13CO between J=9-8 and J=22-21, the 119 micron ground-state rotational line of OH, and the 219 micron ground-state rotational line of H2D(+). All of these lines were observed at spectral resolutions exceeding 1 part in 10(exp 6), thereby allowing accurate line shapes and Doppler velocities to be measured.

  12. Cathodoluminescence of InP

    NASA Technical Reports Server (NTRS)

    Gatos, C. H.; Vaughan, J. J.; Lagowski, J.; Gatos, H. C.

    1981-01-01

    Cathodoluminescence studies were carried out on p-type InP having carrier concentrations ranging from 7.2 x 10 to the 16th to 7.4 x 10 to the 18th per cu cm in the temperature range of 80-580 K. It was found that low-temperature spectra exhibited peaks at 1.41 and 1.38 eV. These peaks were attributed to band-to-band and band-acceptor transitions, respectively. The dependence of the band-to-band peak on temperature was used to extend knowledge of the temperature dependence of the energy gap of InP to 550 K. It was shown that the half-width of the cathodoluminescence peak can be used for the determination of carrier concentration and carrier-concentration inhomogeneities in the material. The variations of the cathodoluminescence peak height with temperature indicated the possibility of Auger recombination for high carrier concentrations (7.4 x 10 to the 18th per cu cm) at temperatures above 450 K.

  13. Modeling on the size dependent properties of InP quantum dots: a hybrid functional study.

    PubMed

    Cho, Eunseog; Jang, Hyosook; Lee, Junho; Jang, Eunjoo

    2013-05-31

    Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2-4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values.

  14. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    SciTech Connect

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; Cossairt, Brandi M.

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formation of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.

  15. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    DOE PAGES

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; ...

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formationmore » of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.« less

  16. Level Indicator On A Tubular Inside Micrometer

    NASA Technical Reports Server (NTRS)

    Malinzak, R. Michael; Booth, Gary N.

    1995-01-01

    Leveling helps to ensure accurate measurements. Attachment helpful because in some situations that involve measurement of large, tight-tolerance inside dimensions, inside micrometers not held level between contact point give inaccurate readings. User adjusts position and orientation of micrometer and verifies level by observing bubble in level indicator. Upon feeling correct drag between micrometer tips and workpiece, user confident that tool used correctly and accurate measurement obtained.

  17. Radiation effects on p+n InP junctions grown by MOCVD

    NASA Technical Reports Server (NTRS)

    Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

    1994-01-01

    The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

  18. Surface chemistry of InP quantum dots: a comprehensive study.

    PubMed

    Cros-Gagneux, Arnaud; Delpech, Fabien; Nayral, Céline; Cornejo, Alfonso; Coppel, Yannick; Chaudret, Bruno

    2010-12-29

    Advanced (1)H, (13)C, and (31)P solution and solid-state NMR studies combined with IR spectroscopy were used to probe, at the molecular scale, the composition and the surface chemistry of indium phosphide (InP) quantum dots (QDs) prepared via a non-coordinating solvent strategy. This nanomaterial can be described as a core-multishell object: an InP core, with a zinc blende bulk structure, is surrounded first by a partially oxidized surface shell, which is itself surrounded by an organic coating. This organic passivating layer is composed, in the first coordination sphere, of tightly bound palmitate ligands which display two different bonding modes. A second coordination sphere includes an unexpected dialkyl ketone and residual long-chain non-coordinating solvents (ODE and its isomers) which interact through weak intermolecular bonds with the alkyl chains of the carboxylate ligands. We show that this ketone is formed during the synthesis process via a decarboxylative coupling route and provides oxidative conditions which are responsible for the oxidation of the InP core surface. This phenomenon has a significant impact on the photoluminescence properties of the as-synthesized QDs and probably accounts for the failure of further growth of the InP core.

  19. Synthesis and characterization of InP and InN colloidal quantum dots.

    SciTech Connect

    Boyle, Timothy J.; Osinski, Marek; Greenberg, Melisa; Bunge, Scott D.; Chen, Weiliang; Smolyakov, G. A.; Pulford, B. N.; Jiang, Ying-Bing

    2005-04-01

    InP quantum dots (QDs) with zinc blende structure and InN QDs with hexagonal structure were synthesized from appropriate organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The QDs were characterized by TEM, the associated energy dispersive spectroscopy (EDS), electron diffraction, and steady state UV-VIS optical absorption and photoluminescence spectroscopy. To our best knowledge, this paper reports synthesis of InN colloidal quantum dots for the first time.

  20. Photon counting micrometer and video CCD.

    NASA Astrophysics Data System (ADS)

    Tie, Qiongxian; Li, Chennfei

    The structure and observational method of the photon counting slotted micrometer are proposed. The micrometer is made up of a piece of slotted plate and a photomultiplier. The photon counting micrometer is replaced by a video CCD for regular trial observation and as a test for the equipment of one scientific CCD, because the micrometer transmission in the instrumental vertical angle transmission mechanism is dull, and the telescope is not able to observe regularly since the optical axis changes greatly as the telescope points to different vertical distance. The video CCD is fixed in the course of observation, recording a picture every forty milliseconds, or one hundred pictures within four seconds, resulting in simultaneously after smoothing treatment the moment and stellar zenith distance when a star passes through the meridian or prime vertical.

  1. Synthesis and characterization of micrometer Cu/PVP architectures

    SciTech Connect

    Luo, Huajuan; Zhao, Yanbao; Sun, Lei

    2011-08-15

    Graphical abstract: A simple method for the synthesis of novel micrometer flower-like Cu/PVP architectures was introduced. Highlights: {yields} Micrometer flower-like copper/polyvinylpyrrolidone architectures were obtained by a simple chemical route. {yields} The amount of N{sub 2}H{sub 4}{center_dot}H{sub 2}O, the reaction temperature, the molar ratio of CuCl{sub 2} to PVP and different molecular weights of PVP play an important role in the controlling the morphology of the Cu/PVP architectures. {yields} A possible mechanism of the formation of Cu/PVP architectures was discussed. -- Abstract: Micrometer-sized flower-like Cu/polyvinylpyrrolidone (PVP) architectures are synthesized by the reduction of copper (II) salt with hydrazine hydrate in aqueous solution in the presence of PVP capping agent. The resulting Cu/PVP architectures are investigated by UV-vis spectroscopy, transmission electron microscopy (TEM), X-ray powder diffraction (XRD), and scanning electron microscopy (SEM). The Cu/PVP flowers have uniform morphologies with an average diameter of 10 {mu}m, made of several intercrossing plates. The formation of Cu/PVP flowers is a new kinetic control process, and the factors such as the amount of N{sub 2}H{sub 4}{center_dot}H{sub 2}O, reaction temperature, molar ratio of CuCl{sub 2} to PVP and molecular weight of PVP have significant effect on the morphology of Cu/PVP architectures. A possible mechanism of the formation of micrometer Cu/PVP architectures was discussed.

  2. Annealing ambient controlled deep defect formation in InP

    NASA Astrophysics Data System (ADS)

    Zhao, Y. W.; Dong, Z. Y.; Duan, M. L.; Sun, W. R.; Zeng, Y. P.; Sun, N. F.; Sun, T. N.

    2004-07-01

    Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while InP annealed in iron phosphide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

  3. Basic Problems in InP Technology.

    DTIC Science & Technology

    1981-03-01

    mass spectrometry (SIMS) analysis .... ............. 20 6 Auger electron spectrum obtained from a chemically etched InP sample showing the formation...deposited on pyrolytically carbon film .... .............. 38 PZ5 4 " -- - - __-- FIGURE PAGE 15 SEN photograph of a sample annealed with 39 Si3N 4...epitaxially grown by a 2 variety of techniques such as liquid-phase epitaxy (LPE), vapor phase epitaxy (VPE),3 metal organic chemical vapor deposition

  4. Electrochemical characterization of InP structures

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Vargas-Aburto, Carlos; Wilt, David M.; Goradia, Manju

    1992-01-01

    Electrochemical (EC) techniques represent a simple and yet accurate method to characterize InP and related materials structures. With EC techniques, uncertainties in the measurements arising from factors such as surface effects, the composition and thickness of a front dead layer, the contacts, etc., can be significantly reduced when both a suitable electrolyte is used and the measuring conditions are carefully selected. In this work, the use of photoelectrochemical techniques with InP structures is reported. The work focuses on both the characterization and the optimization of structures grown by thermal diffusion and by epitaxial methods. Characterization of the structures is done by studying the variation in the density of surface states, number of defects, and net majority carrier concentration as a function of material removed. A step-by-step optimization process of n(sup +)p and p(sup+)n InP structures is also described. This involves the passivation and subsequent removal of damaged layers in order to extract the performance parameters of solar cells fabricated with these structures.

  5. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap component. Concentrator cells include the three terminal multibandgap cell and n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n + p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  6. Recent progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.; Jain, R. K.; Swartz, C. K.

    1991-01-01

    Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap, component. Concentrator cells include the three terminal multibandgap cell and an n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n+p InP and ITO/InP cells in space on board the LIPS 3 satellite.

  7. Three-Stage InP Submillimeter-Wave MMIC Amplifier

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

    2008-01-01

    A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

  8. High performance photodetectors based on high quality InP nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Yan-Kun; Yang, Tie-Feng; Li, Hong-Lai; Qi, Zhao-Yang; Chen, Xin-Liang; Wu, Wen-Qiang; Hu, Xue-Lu; He, Peng-Bin; Jiang, Ying; Hu, Wei; Zhang, Qing-Lin; Zhuang, Xiu-Juan; Zhu, Xiao-Li; Pan, An-Lian

    2016-11-01

    In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

  9. Peptides for functionalization of InP semiconductors.

    PubMed

    Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

    2009-09-15

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  10. Terahertz emission from InP

    SciTech Connect

    Hargreaves, S.; Lewis, R. A.

    2010-01-04

    We investigate the generation of THz radiation by the application of ultra-short near-infrared optical pulses to bulk unbiased InP. The THz radiation is detected in the direction of the specular reflection. While the overall emission characteristics are similar to those displayed by InAs under similar excitation conditions, in contrast to InAs, a single-cycle only variation in THz signal, of about +-20%, is observed as the sample is rotated through 360 deg. around the surface normal.

  11. Wideband 1.064 micrometer detector evaluation

    NASA Technical Reports Server (NTRS)

    Green, S. I.

    1975-01-01

    The performance of several candidate detectors for use as communications detectors in a 400 Mbps 1.064 micrometers laser communication system was evaluated. The results of communication system Bit Error Rate (BER) testing for the best detector of each type are summarized. Complete testing data of each type detector is presented. The 400 Mbps 1.064 micrometers communication system receiver test bed is described. The best communication system results for each detector type are included. Performance comparisons are made at 0.000001 BER, the specification level chosen for satellite laser communication links. The data is presented in two groups. The first indicates the best performance levels that can be expected on normal space laser communication system operation. The second cites the best performance levels which can be achieved by focusing the signal to diffraction limited spots on the photosensitive area.

  12. Improvements in InP solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, Christopher; Vernon, Stanley M.; Haven, Victor E.

    1988-01-01

    Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

  13. InP lateral overgrowth technology for silicon photonics

    NASA Astrophysics Data System (ADS)

    Wang, Zhechao; Junesand, Carl; Metaferia, Wondwosen; Hu, Chen; Lourdudoss, Sebastian; Wosinski, Lech

    2010-12-01

    Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

  14. Progress in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, David J.

    1988-01-01

    Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

  15. Donor Behavior in High-Purity Epitaxial InP.

    DTIC Science & Technology

    1980-10-02

    Thermodynamic Analysis of L InP and GaAs Deposition", Journal of Phyjsica Chemical Solids 36, 111, (1975). 17. 0. Levenspiel , "Chemical Reaction Engineering",r John Wiley and Sons, NY, NY, (1972).

  16. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    NASA Technical Reports Server (NTRS)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  17. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    NASA Technical Reports Server (NTRS)

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  18. Copper-micrometer-sized diamond nanostructured composites

    NASA Astrophysics Data System (ADS)

    Nunes, D.; Livramento, V.; Shohoji, N.; Fernandes, H.; Silva, C.; Correia, J. B.; Carvalho, P. A.

    2011-12-01

    Reinforcement of a copper matrix with diamond enables tailoring the properties demanded for thermal management applications at high temperature, such as the ones required for heat sink materials in low activated nuclear fusion reactors. For an optimum compromise between thermal conductivity and mechanical properties, a novel approach based on multiscale diamond dispersions is proposed: a Cu-nanodiamond composite produced by milling is used as a nanostructured matrix for further dispersion of micrometer-sized diamond (μDiamond). A series of Cu-nanodiamond mixtures have been milled to establish a suitable nanodiamond fraction. A refined matrix with homogeneously dispersed nanoparticles was obtained with 4 at.% μDiamond for posterior mixture with microdiamond and subsequent consolidation. Preliminary consolidation by hot extrusion of a mixture of pure copper and μDiamond has been carried out to define optimal processing parameters. The materials produced were characterized by x-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

  19. Micrometer glass nozzles for flow focusing

    NASA Astrophysics Data System (ADS)

    Montanero, J. M.; Gañán-Calvo, A. M.; Acero, A. J.; Vega, E. J.

    2010-07-01

    We discuss the use of flame-shaped glass micro-nozzles for ultra-fine liquid atomization by flow focusing (DePonte et al 2008 J. Phys. D: Appl. Phys. 41 195505), which may have great importance in very varied technological fields, such as biotechnology, biomedicine and analytical chemistry. Some advantages offered by these nozzles over the original plate orifice configuration (Gañán-Calvo 1998 Phys. Rev. Lett. 80 285) are: (i) they are extraordinarily smooth even at the micrometer scale, (ii) one can readily obtain nozzles with neck diameters in the range of a few tens of microns, (iii) they demand gas flow rates significantly smaller than those required by the plate orifice configuration and (iv) they are transparent. However, highly demanding applications require a precise characterization of their three-dimensional shape by non-destructive means. This characterization cannot be obtained straightforwardly from optical transmission or electron microscopy mainly due to optical distortion. We propose in this paper a method for measuring the shape and size of micrometer nozzles formed inside millimetric and submillimetric capillaries made of transparent materials. The inside of the capillary is colored, and the capillary is put in a liquid bath with almost the same refractive index as that of the capillary to eliminate optical distortion. The nozzle image, acquired with a microscope using back-light illumination to get a silhouette effect, is processed to locate the contours of the nozzle with sub-pixel resolution. To determine the three-dimensional shape of the nozzle, the capillary is rotated in front of the camera. The method provides precise results for nozzle sizes down to a few microns.

  20. High-efficiency heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Wanlass, M. W.; Coutts, T. J.; Ward, J. S.; Emery, K. A.

    1991-01-01

    High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet

  1. Atoms.inp Archive: Crystallographic Data from GSECARS

    DOE Data Explorer

    Newville, Matthew

    The Atoms.inp Archive is a collection of crystallographic data for use in XAFS analysis. The crystallographic data is stored as atoms.inp files, which contain all the information necessary to describe the crystal, and can be used by the program ATOMS to generate feff.inp files. These files can then be used by the FEFF program [See http://leonardo.phys.washington.edu/feff/] to calculate a theoretical XAFS spectrum for the crystal. This archive exists because it can take a considerable amount of time to locate a suitable reference for a model structure to use for making theoretical XAFS standards. Even then, references sometimes give non-standard or incomplete crystallographic notation that ATOMS has difficulty interpreting. All of this means that getting a reliable atoms.inp file can take quite a bit of effort. It is hoped that this collection of well-documented and well-tested atoms.inp files will eliminate much of the work in creating theoretical XAFS standards from FEFF. [Taken from http://cars9.uchicago.edu/~newville/adb/]. The collection currently has more than 200 crystal structures, 2748 data files, and it continues to expand. The collection is related to the UWXAFS Project [http://depts.washington.edu/uwxafs/] and to the work of the Consortium for Advanced Radiation Sources (CARS). After searching the Archive, a user may also choose to run the web version of ATOMS software.

  2. Long-Term INP Measurements within the BACCHUS project

    NASA Astrophysics Data System (ADS)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  3. Summary of Workshop on InP: Status and Prospects

    NASA Technical Reports Server (NTRS)

    Walters, R. J.; Weinberg, I.

    1994-01-01

    The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

  4. [The influential factors of MOCVD growth of InP in opals].

    PubMed

    Tan, Chun-hua; Fan, Guang-han; Huang, Xu-guang

    2008-12-01

    The key problem of fabricating the 3-D InP inverse opal photonic crystal is to increase the loading of InP in opals. In the present paper, low-pressure metal-organic chemical-vapour deposition (MOCVD) was used to infill the voids within synthetic opals with InP. The morphologies and optical properties of SiO2-InP photonic crystal were characterized by scanning electron microscopy and ultraviolet-visible spectrophotometry (UV-Vis). Several series of experiments were carried out in order to analyze the factors that influence the loading of InP in opals and determine the optimal InP growth conditions. The results of optical experiments are in good agreement with those derived from the theoretical considerations: By increasing the extent of InP infilling within the voids, the extent of refractive index contrast between the silica spheres and the void as well as the extent of natural optical properties change of the photonic crystal were increased. Cycle growth, low-pressure growth, and using the match substrate and the same configuration character between SiOi and InP are beneficial to increaseing the extent of InP infilling within the opal voids. The process has been optimized to achieve SiO2-InP photonic crystal with higher loading of InP. The study provides a scientific basis for manufacturing three-dimensional InP inverse opal photonic crystals.

  5. Electron guns and collectors developed at INP for electron cooling devices

    SciTech Connect

    Sharapa, A.N.; Shemyakin, A.V.

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  6. Absorption enhancement by textured InP in solar cells

    NASA Astrophysics Data System (ADS)

    Yun, Seokhun; Ji, Taeksoo

    2016-03-01

    III-V compound semiconductors seem to be the ideal materials for photovoltaic devices because they exhibit fast carrier velocity. III-V compound semiconductors, however, are unfavorable materials to be commercialized on large scale photovoltaic devices because of their high material cost. The textured surface shows the potential to increase the performance of solar cells because of the properties such as high absorption and longer light path length. These properties can overcome the disadvantage of the III-V compound semiconductors through thin thickness use when producing solar cells. In this study, we demonstrate that textured surfaces on InP formed by nano-sphere lithography and plasma etching process can enhance the absorption effectively in comparison with planar surface. The power conversion efficiency of InP solar cells using the textured InP and the aluminum doped zinc oxide was achieved up to 8%.

  7. High Efficiency InP Solar Cells Through Nanostructuring

    NASA Astrophysics Data System (ADS)

    Goldman, Daniel; Murray, Joseph; Munday, Jeremy

    We describe high efficiency InP solar cells which utilize a periodic array of optically designed TiO2 nanocylinders. Optical and electronic simulations were performed to determine the spectrally resolved reflectivity and I-V characteristics of potential devices under AM1.5G illumination. The reflectivity of InP solar cells with these nanocylinders is found to have an average value of 2% over the visible and near-IR spectral range, which outperforms traditional antireflection coatings. Coupling between Mie scattering resonances and thin film interference effects is found to accurately describe the optical enhancement provided by the nanocylinders. These nanostructured solar cells have power conversion efficiencies greater than 23%, which is comparable to the highest quoted efficiencies for InP solar cells.

  8. Radiation effects in heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

    1993-01-01

    Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

  9. Better Ohmic Contacts For InP Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

  10. Comparative modeling of InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  11. Palladium nanoparticles on InP for hydrogen detection

    PubMed Central

    2011-01-01

    Layers of palladium (Pd) nanoparticles on indium phosphide (InP) were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored. PMID:21711487

  12. Workshop on Heteroepitaxial InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Walters, R. W.

    1993-01-01

    In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

  13. Position-controlled [100] InP nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Plissard, Sébastien; Hocevar, Moïra; Vu, Thuy T. T.; Zehender, Tilman; Immink, George G. W.; Verheijen, Marcel A.; Haverkort, Jos; Bakkers, Erik P. A. M.

    2012-01-01

    We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

  14. InP solar cell with window layer

    NASA Technical Reports Server (NTRS)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  15. [Study on pollution for the photoelectronic material InP].

    PubMed

    Xu, Jian-cheng; Ding, Xiao-ping; Chen, Ding-qin

    2002-08-01

    The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given. The Hall coefficient, charge carrier concentration and Hall mobility were determined. Experimental results indicate that the pollution of silicon is predominant.

  16. Experiences with digital processing of images at INPE

    NASA Technical Reports Server (NTRS)

    Mascarenhas, N. D. A. (Principal Investigator)

    1984-01-01

    Four different research experiments with digital image processing at INPE will be described: (1) edge detection by hypothesis testing; (2) image interpolation by finite impulse response filters; (3) spatial feature extraction methods in multispectral classification; and (4) translational image registration by sequential tests of hypotheses.

  17. Encapsulated diffusion of sulphur into InP

    NASA Technical Reports Server (NTRS)

    Parat, K. K.; Borrego, J. M.; Ghandhi, S. K.

    1989-01-01

    This talk outlines a simple process for the fabrication of n(+)-p solar cells in indium phosphide. Large area cells (greater than 0.25 sq cm) have been made by this process, with a photovoltaic conversion efficiency of 15.21 percent under AM0 conditions of illumination. An ideality factor of 1.1 and a saturation current density of 8 x 10 to the minus 15th power A/sq cm have been observed for these cells. The technique for cell fabrication involves the diffusion of sulfur into InP by an open tube process, and gives highly reproducible results from run to run. A vacuum-deposited layer of gallium sulphide (Ga2S3) was used as the source for sulfur diffusion, with a chemically vapor deposited SiO2 cap layer to prevent decomposition of the InP surface during heat treatment. Diffusions were carried out in a flowing nitrogen ambient at 585 to 708 C, and characterized by their surface carrier concentration and the diffusion constant. The diffusion profile for sulfur in InP is estimated to be of the complementary error function type. The activation energy of the diffusion was estimated to be 1.94 eV. The technique described here is ideally suited for the fabrication of shallow n(+)-p junctions in InP, and has been used for space-borne solar cells.

  18. c-Myc inhibits TP53INP1 expression via promoter methylation in esophageal carcinoma

    SciTech Connect

    Weng, Wenhao; Yang, Qinyuan; Huang, Miaolong; Qiao, Yongxia; Xie, Yuan; Yu, Yongchun; Jing, An; Li, Zhi

    2011-02-11

    Research highlights: {yields} TP53INP1 expression is down-regulated in esophageal carcinoma and is associated with CGI-131 methylation. {yields} Inhibition of CGI-131 methylation upregulates TP53INP1 expression in ESCC cell lines. {yields} Ectopic expression of TP53INP1 inhibits growth of ESCC cells by inducing apoptosis and inhibiting cell cycle progression. {yields} c-Myc binds to the promoter of TP53INP1 in vivo and vitro and recruits DNMT3A to TP53INP1 promoter for CGI-131 methylation. -- Abstract: Tumor protein p53-induced nuclear protein 1 (TP53INP1) is a well known stress-induced protein that plays a role in both cell cycle arrest and p53-mediated apoptosis. Loss of TP53INP1 expression has been reported in human melanoma, breast carcinoma, and gastric cancer. However, TP53INP1 expression and its regulatory mechanism in esophageal squamous cell carcinoma (ESCC) remain unclear. Our findings are in agreement with previous reports in that the expression of TP53INP1 was downregulated in 28% (10/36 cases) of ESCC lesions, and this was accompanied by significant promoter methylation. Overexpression of TP53INP1 induced G1 cell cycle arrest and increased apoptosis in ESCC cell lines (EC-1, EC-109, EC-9706). Furthermore, our study showed that the oncoprotein c-Myc bound to the core promoter of TP53INP1 and recruited DNA methyltransferase 3A to methylate the local promoter region, leading to the inhibition of TP53INP1 expression. Our findings revealed that TP53INP1 is a tumor suppressor in ESCC and that c-Myc-mediated DNA methylation-associated silencing of TP53INP1 contributed to the pathogenesis of human ESCC.

  19. Synthesizing speech

    NASA Astrophysics Data System (ADS)

    Siltanen, Samuli

    2015-01-01

    Samuli Siltanen explains how solving an "inverse problem" will improve the quality of life of people who can't speak and have to use voice synthesizers - particularly women and children, whose only current option is to sound like an adult male.

  20. Waveform synthesizer

    DOEpatents

    Franks, Larry A.; Nelson, Melvin A.

    1981-01-01

    A method of producing optical and electrical pulses of desired shape. An optical pulse of arbitrary but defined shape illuminates one end of an array of optical fiber waveguides of differing lengths to time differentiate the input pulse. The optical outputs at the other end of the array are combined to form a synthesized pulse of desired shape.

  1. Comparison of 8 to 12 Micrometer and 3 to 5 Micrometer CVF Transmissometer Data with LOWTRAN Calculations.

    DTIC Science & Technology

    1984-06-26

    STANDARS -963-A " .:- A 9 ..A . . . . . . ". . _’.". ". . . - - ’. - . . - . - . - " ,, . - . , .,,-’ . . - . ,.X...Micrometer and 3 to 5 Micrometer CVF Transmissometer Data With LOWTRAN Calculations F. X. KNEIZYS W. 0. GALLERY R. R. GRUENZEL S. A. CLOUGH W. C. MARTIN J. H...Facility, Wright-Patterson Air Force Base, Ohio with a circular variable filter ((’VI) transmissometer. The data cover the spectral regions from 8- to

  2. Fabrication of high-efficiency n(+)-p junction InP solar cells by using group VIb element diffusion into p-type InP

    NASA Astrophysics Data System (ADS)

    Yamamoto, A.; Yamaguchi, M.; Uemura, C.

    1985-12-01

    The fabrication of n(+)-p homojunction InP solar cells has been studied using thermal diffusion of S, Se, or Te into p-type InP substrates. Sulphur diffusion using an In2S3 source was found to be effective in forming a shallow and steep n(+)-p function without surface morphology degradation of substrates. A conversion efficiency (active area) of 18 percent, which is the highest efficiency ever reported for InP homojunction solar cells, was obtained by optimizing fabrication conditions for sulphur-diffused cells. An electron irradiation study on fabricated cells has also been made. The InP solar cell was found to have a higher resistance to radiation degradation than Si and GaAs cells. Through these studies, it has been demonstrated that the InP solar cell has excellent potential for space applications.

  3. Surface characterization of InP using photoluminescence

    NASA Technical Reports Server (NTRS)

    Chang, R. R.; Iyer, R.; Lile, D. L.

    1987-01-01

    Photoluminescence (PL) measurements have been performed on InP samples in situ during various surface treatments including chemical etching, wet anodization, and low-pressure chemical vapor deposition. It was found, in agreement with previously published results, that the magnitude of the PL signal varies markedly with surface treatment due presumably to changes in either surface-state density, and/or surface potential. In an attempt to assess the effectiveness of this noninvasive method as a tool for characterizing and monitoring the progressive development of a semiconductor surface during processing, a number of experiments on InP have been performed. The results indicate that although some uncertainty may exist in assigning a mechanism for the PL change in any given experiment, the general trend appears to be that surface degradation results in a reduced signal. As a result, process steps which enhance the PL intensity are likely to be beneficial in the preparation of a high-quality interface.

  4. Azimuthally polarized cathodoluminescence from InP nanowires

    SciTech Connect

    Brenny, B. J. M.; Osorio, C. I.; Polman, A.; Dam, D. van; Gómez Rivas, J.

    2015-11-16

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  5. A single crystalline InP nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  6. Azimuthally polarized cathodoluminescence from InP nanowires

    NASA Astrophysics Data System (ADS)

    Brenny, B. J. M.; van Dam, D.; Osorio, C. I.; Gómez Rivas, J.; Polman, A.

    2015-11-01

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  7. Surface accumulation of hydrogen during capless annealing of InP

    SciTech Connect

    Haussler, W.

    1989-06-19

    InP samples, which had received a capless anneal in a phosphine/hydrogenatmosphere, were examined for hydrogen contamination by secondary-ion massspectrometry. It is found that hydrogen accumulates at the InP surface duringannealing. Annealing of Be-implanted InP leads to similar profile shapes for theBe and H atoms. Passivation of the Be acceptors, if effective at all, appears tobe of only minor significance.

  8. New directions in InP solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Brinker, D. J.

    1990-01-01

    Recent research efforts representing new directions in InP solar cell research are reviewed. These include heteroepitaxial growth on silicon and gallium arsenide substrates, V-grooved cells, large area high efficiency cells, and surface passivation. Improvements in heteroepitaxial cell efficiency are described together with processing of 19.1 percent, 4 sq cm cells. Recommendations are made for improvements in processing leading to increased efficiencies.

  9. InP Solar Cell Development on Inexpensive Silicon Substrates

    DTIC Science & Technology

    1994-08-16

    P heteroepitaxial cells. For the same emitter thickness, a P/N InP cell has about 100X higher sheet resistance than the N/P cell. In Phase I, Spire...attempted to keep the sheet resistance loss of the new P/N cells approximately the same as the 19% N/P cells with 300 A emitters and gridlines on 700

  10. Diameter Dependence of Planar Defects in InP Nanowires

    PubMed Central

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-01-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications. PMID:27616584

  11. Electrical properties of oxygen ion-implanted InP

    NASA Astrophysics Data System (ADS)

    He, L.; Anderson, W. A.

    1992-10-01

    The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP ( n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.

  12. Diameter Dependence of Planar Defects in InP Nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, Senpo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-09-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications.

  13. Origin of deep level defect related photoluminescence in annealed InP

    NASA Astrophysics Data System (ADS)

    Zhao, Youwen; Dong, Zhiyuan; Miao, Shanshan; Deng, Aihong; Yang, Jun; Wang, Bo

    2006-12-01

    Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3eV has been observed in the InP sample annealed in iron phosphide ambient. Both the 1.3eV PL emission and a defect at EC-0.18eV correlate with a divacancy detected in the annealed InP sample. The results make a divacancy defect and related property identified in the annealed InP.

  14. Influence of doping in InP buffer on photoluminescence behavior of InPBi

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Pan, Wenwu; Cao, Chunfang; Wu, Xiaoyan; Wang, Shumin; Gong, Qian

    2016-11-01

    InP1- x Bi x epilayers with 1.0% bismuth concentration were grown on InP(001) substrates by gas-source molecular beam epitaxy. Silicon and beryllium were doped into the InP buffer layer, and their influences on the photoluminescence (PL) emission of InPBi were investigated. The PL emission of InPBi was found to be intensified by beryllium doping into the InP buffer layer. However, there was no influence of silicon doping. To investigate the reason for the PL intensity enhancement of InPBi, the carrier transport behavior at the interface was also discussed.

  15. Inp1p is a peroxisomal membrane protein required for peroxisome inheritance in Saccharomyces cerevisiae.

    PubMed

    Fagarasanu, Monica; Fagarasanu, Andrei; Tam, Yuen Yi C; Aitchison, John D; Rachubinski, Richard A

    2005-06-06

    Cells have evolved molecular mechanisms for the efficient transmission of organelles during cell division. Little is known about how peroxisomes are inherited. Inp1p is a peripheral membrane protein of peroxisomes of Saccharomyces cerevisiae that affects both the morphology of peroxisomes and their partitioning during cell division. In vivo 4-dimensional video microscopy showed an inability of mother cells to retain a subset of peroxisomes in dividing cells lacking the INP1 gene, whereas cells overexpressing INP1 exhibited immobilized peroxisomes that failed to be partitioned to the bud. Overproduced Inp1p localized to both peroxisomes and the cell cortex, supporting an interaction of Inp1p with specific structures lining the cell periphery. The levels of Inp1p vary with the cell cycle. Inp1p binds Pex25p, Pex30p, and Vps1p, which have been implicated in controlling peroxisome division. Our findings are consistent with Inp1p acting as a factor that retains peroxisomes in cells and controls peroxisome division. Inp1p is the first peroxisomal protein directly implicated in peroxisome inheritance.

  16. High sensitivity infrared 10.6 micrometer heterodyne receiver development

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The results are presented for a study on the design of an infrared 10.6-micrometer quantum-noise-limited optical receiver subsystem. Performance measurements of the HgCdTe photomixer preamplifier combination were carried out for photomixer temperatures up to 152 K and a photomixer frequency response of up to 420 MHz was obtained. Results of temperature and bias cycling of HgCdTe photomixers are reported. Design considerations for an operational 10.6 micrometer heterodyne receiver are presented. These consist of design data on required laser LO illumination, heat load levels for photomixer cooler, photomixer uniformity and the effects of photomixer impedance match on receiver sensitivity. Analysis and measurements of 10.6 micrometer heterodyne detection in an extrinsic photoconductive (p-type) HgCdTe photomixer are also presented.

  17. Synthesizing Chaos

    NASA Astrophysics Data System (ADS)

    Blakely, Jonathan; Corron, Ned; Hayes, Scott; Pethel, Shawn

    2007-03-01

    Chaos is usually attributed only to nonlinear systems. Yet it was recently shown that chaotic waveforms can be synthesized by linear superposition of randomly polarized basis functions. The basis function contains a growing oscillation that terminates in a large pulse. We show that this function is easily realized when viewed backward in time as a pulse followed by ringing decay. Consequently, a linear filter driven by random pulses outputs a waveform that, when viewed backward in time, exhibits essential qualities of chaos, i.e. determinism and a positive Lyapunov exponent. This phenomenon suggests that chaos may be connected to physical theories whose framework is not that of a deterministic dynamical system. We demonstrate that synthesizing chaos requires a balance between the topological entropy of the random source and the dissipation in the filter. Surprisingly, using different encodings of the random source, the same filter can produce both Lorenz-like and R"ossler-like waveforms. The different encodings can be viewed as grammar restrictions on a more general encoding that produces a chaotic superset encompassing the Lorenz and R"ossler paradigms of nonlinear dynamics. Thus, the language of deterministic chaos provides a useful description for a class of signals not generated by a deterministic system.

  18. 0.4-3.5-micrometer Observations of 4179 Toutatis

    NASA Astrophysics Data System (ADS)

    Howell, E. S.; Britt, D. T.; Bell, J. F.; Binzel, R. P.; Lebofsky, L. A.

    1993-07-01

    We obtained nearly simultaneous observations of 4179 Toutatis over a 0.3-3.5 micrometer wavelength range on 4 January 1993 UT. Howell obtained a 1.2-2.5 micrometer spectrophotometry using the Multiple Mirror Telescope in Arizona. Britt and Bell obtained narrowband photometry in the 3-micrometer region as well as broadband JHK photometry from the Infrared Telescope Facility in Hawaii. Binzel measured the visible spectrum using a CCD spectrograph at the McGraw-Hill Observatory in Arizona. Using V photometry reported by Pravec in the Czech Republic on adjacent nights [1], we were able to combine all these spectral regions. The rotation period of this object is approximately 10 days, so the time differences between the measurements of different spectral regions are negligible. Tholen has classified 4179 Toutatis as an S-type asteroid based on visible photometry. We measure a pyroxene absorption band near 2 micrometers, present in most S-type asteroid spectra. Unfortunately, a gap in spectral coverage prevents us from determining the characteristics of the 1-micrometer absorption band accurately. The spectral slope as measured from 1.25 to 2.2 micrometers is 6-10%, which is modest compared to other S-type asteroids. The spectrum of this asteroid is similar to other near-Earth S-type asteroids that have been observed in the near-infrared wavelength region. On 4 January 1993, 4179 Toutatis was 0.182 AU from the Earth, and 1.158 AU from the Sun. At this solar distance, the thermal emission contributes substantially to the flux at 3 micrometers. The determination of thermal emission is complicated by the slow rotation rate and the irregular shape of this object that was revealed by radar observations [2]. Preliminary results suggest that no 3-micrometer absorption feature is present, indicating that this object is anhydrous. Using these spectral data, we will compare 4179 Toutatis to other S-type asteroids, both in the main belt and the near-Earth environment. References

  19. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells.

    PubMed

    Sándor, Nikolett; Schilling-Tóth, Boglárka; Kis, Enikő; Fodor, Lili; Mucsányi, Fruzsina; Sáfrány, Géza; Hegyesi, Hargita

    2015-10-23

    Tumor protein 53-induced nuclear protein-1 (TP53inp1) is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT) cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP) cells was compared to cells transfected with non-targeting (NT) shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B) immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR) induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  20. High-Energy 2-Micrometers Doppler Lidar for Wind Measurements

    NASA Technical Reports Server (NTRS)

    Koch, Grady J.; Beyon, Jeffrey Y.; Barnes, Bruce W.; Petros, Mulugeta; Yu, Jirong; Amzajerdian, Farzin; Kavaya, Michael J.; Singh, Upendra N.

    2006-01-01

    High-energy 2-micrometer wavelength lasers have been incorporated in a prototype coherent Doppler lidar to test component technologies and explore applications for remote sensing of the atmosphere. Design of the lidar is presented including aspects in the laser transmitter, receiver, photodetector, and signal processing. Calibration tests and sample atmospheric data are presented on wind and aerosol profiling.

  1. 2 Micrometers InAsSb Quantum-dot Lasers

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Uhl, David; Keo, Sam

    2004-01-01

    InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.

  2. Near-optimum design of the InP homojunction solar cell

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Geier, James V.; Weinberg, Irving

    1987-01-01

    Using a fairly comprehensive model, researchers have done a parametric variation study of the InP n+p homojunction solar cell for AMO, 25 C operation. The results of this study are presented. These results indicate that an efficiency of about 25 percent should be realistically possible in a shallow homojunction InP solar cell with near-optimum design.

  3. Optical processing using photorefractive GaAs and InP

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Luke, Keung L.

    1991-01-01

    The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

  4. Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

    NASA Astrophysics Data System (ADS)

    Chertouk, Mourad; Boudiaf, A.; Azoulay, Rozette; Clei, A.

    1993-11-01

    The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 1017 cm-3 and 1018 cm-3 channel doping. The excess gate-drain assisted tunneling current in 1018 cm-3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased.

  5. 11 micrometer emissivities and droplet radii for marine stratocumulus

    NASA Technical Reports Server (NTRS)

    Luo, Gang; Lin, Xijian; Coakley, James A.

    1994-01-01

    The results of a new multispectral infrared retrieval scheme for obtaining fractional cloud cover and 11 micrometer emissivity with those of the spatial coherence method which obtains fractional cloud cover assuming that the clouds are opaque at infrared wavelengths. Both methods are applied to 4-km NOAA advanced very high resolution radiometer global area coverage data for 250-km-scale regions containing single-layered marine stratocumulus off the coast of South America. The average 11 micrometer emissivity for low level clouds is found to be between 0.70 and 0.85. The low emissivity is evidently due to the thinning of clouds at their edges. Semitransparent cloud edges evidently make up a substantial portion of the area covered by such clouds. This result indicates that cloud cover obtained using the spatial coherence method is underestimated by 0.1 to 0.2, as has been claimed in a previous study. The fractional cloud cover for the ensemble of 250-km-scale regions studied here increased slightly from 0.60 for daytime observations to 0.63 for nighttime observations. The 11 micrometer emissivity also increased slightly, but about half of the increase was related to the increase in cloud cover and a decrease in the relative area covered by cloud edge material. Presumably, the other half was due to an increase in cloud liquid water. Cloud height showed no significant change. The average effective droplet radius increased from 9.3 micrometers for daytime observations to 10.2 micrometers at night.

  6. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

    SciTech Connect

    Lin, Shisheng Wang, Peng; Li, Xiaoqiang; Wu, Zhiqian; Xu, Zhijuan; Zhang, Shengjiao; Xu, Wenli

    2015-10-12

    We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.

  7. Electrochemical characterization of p(+)n and n(+)p diffused InP structures

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Faur, Maria; Faur, Mircea; Goradia, M.; Vargas-Aburto, Carlos

    1993-01-01

    The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.

  8. Interband polarized absorption in InP polytypic superlattices

    SciTech Connect

    Faria Junior, P. E.; Sipahi, G. M.; Campos, T.

    2014-11-21

    Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well reported in the literature, a deeper theoretical understanding of how crystal phase mixing and quantum confinement change the output linear light polarization is still needed. In this paper, we theoretically investigate the mixing effects of wurtzite and zinc-blende phases on the interband absorption and in the degree of light polarization of an InP polytypic superlattice. We use a single 8 × 8 k⋅p Hamiltonian that describes both crystal phases. Quantum confinement is investigated by changing the size of the polytypic unit cell. We also include the optical confinement effect due to the dielectric mismatch between the superlattice and the vaccum and we show it to be necessary to match experimental results. Our calculations for large wurtzite concentrations and small quantum confinement explain the optical trends of recent photoluminescence excitation measurements. Furthermore, we find a high sensitivity to zinc-blende concentrations in the degree of linear polarization. This sensitivity can be reduced by increasing quantum confinement. In conclusion, our theoretical analysis provides an explanation for optical trends in InP polytypic superlattices, and shows that the interplay of crystal phase mixing and quantum confinement is an area worth exploring for light polarization engineering.

  9. Micrometer- and Nanometer-Sized Polymeric Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Granstrom, Magnus; Berggren, Magnus; Inganas, Olle

    1995-03-01

    A method for the fabrication of micrometer- and submicrometer-sized polymeric light-emitting diodes is presented. Such diodes have a variety of applications. Light sources of dimensions around 100 nanometers are required for subwavelength, near-field optical microscopy. Another possible application is patterning on the micrometer and nanometer scale. The diodes have been made in the form of a sandwich structure, with the conductive polymer poly(3,4-ethylene-dioxythiophene) polymerized in the pores of commercially available microfiltration membranes defining the hole-injecting contacts, poly[3-(4-octylphenyl)-2,2'-bithiophene] as the light-emitting layer, and a thin film of calcium-aluminum as the electron injector.

  10. 10.6 Micrometer Gradient Index Optical Component Design

    DTIC Science & Technology

    1983-11-01

    meters. If the wavelength of the instant radiation is 0.05 micrometers, then 40 interference fringes will be seen in a Mach-Zehnder interferometer ...80 will be observed in a Twyman -Green configuration). Thus, 40 fringes will be seen over a distance of 5 millimeters (the depth of the gradient) or 8...techniques but to introduce a modulation with two frequencies. The system, called a harmonic interferometer , has been described elsewhere [1]. The

  11. Color lensless digital holographic microscopy with micrometer resolution.

    PubMed

    Garcia-Sucerquia, Jorge

    2012-05-15

    Color digital lensless holographic microscopy with micrometer resolution is presented. Multiwavelength illumination of a biological sample and a posteriori color composition of the amplitude images individually reconstructed are used to obtain full-color representation of the microscopic specimen. To match the sizes of the reconstructed holograms for each wavelength, a reconstruction algorithm that allows for choosing the pixel size at the reconstruction plane independently of the wavelength and the reconstruction distance is used. The method is illustrated with experimental results.

  12. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  13. Systems and methods for advanced ultra-high-performance InP solar cells

    DOEpatents

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  14. Surface etching for light trapping in encapsulated InP solar cells

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Landis, Geoffrey A.

    1991-01-01

    Reducing the reflection from the surface of InP is important for increasing the efficiency of solar cells and photodetectors. In this paper a new technique for reducing reflectance of glass-encapsulated InP is reported. Low-angle grooves are produced on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. A significant decrease in surface reflection is measured.

  15. A 83 GHz InP DHBT static frequency divider

    NASA Astrophysics Data System (ADS)

    Youtao, Zhang; Xiaopeng, Li; Min, Zhang; Wei, Cheng; Xinyu, Chen

    2014-04-01

    A static frequency divider is presented using 0.7 μm InP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 × 0.65 mm2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.

  16. Electrical detection of spin hyperpolarization in InP

    NASA Astrophysics Data System (ADS)

    Caspers, Christian; Ansermet, Jean-Philippe

    2014-09-01

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ0H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  17. InAs nanowire formation on InP(001)

    SciTech Connect

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-12-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along <110> and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands.

  18. INPE LANDSAT-D thematic mapper computer compatible tape format specification

    NASA Technical Reports Server (NTRS)

    Parada, N. D. J. (Principal Investigator); Desouza, R. C. M.

    1982-01-01

    The format of the computer compatible tapes (CCT) which contain Thematic Mapper (TM) imagery data acquired from the LANDSAT D and D Prime satellites by the INSTITUTO DE PERSQUISAS ESPACIALS (CNPq-INPE/BRAZIL) is defined.

  19. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  20. Control of persistent photoconductivity in nanostructured InP through morphology design

    NASA Astrophysics Data System (ADS)

    Monaico, Ed; Postolache, V.; Borodin, E.; Ursaki, V. V.; Lupan, O.; Adelung, R.; Nielsch, K.; Tiginyanu, I. M.

    2015-03-01

    In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states.

  1. Characterization of Si implantation and annealing of InP by Raman spectroscopy

    SciTech Connect

    Artus, L.; Cusco, R.; Martin, J.M.; Gonzalez-Diaz, G.

    1995-12-31

    Raman scattering was used to assess the lattice damage caused by Si{sup +} implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si{sup +} with doses in the range of 10{sup 12} to 5 {times} 10{sup 14}cm{sup {minus}2}. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 10{sup 14} cm{sup {minus}2}. RTA of the implanted samples at 875 C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.

  2. Ultra-broadband terahertz spectroscopy of InP wafer using coherent heterodyne time domain spectrometer

    NASA Astrophysics Data System (ADS)

    Xu, Xiaoyan; Zhang, Liangliang; Zhang, Cunlin

    2015-08-01

    Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system. It is observed that InP wafer is opaque at the frequencies spanning from 6.7 THz to 12.1 THz. In the frequency regions of 0.8-6.7 THz and 12.1-18 THz it has relatively low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based component for nonlinear terahertz devices.

  3. Additive Manufacturing of Metal Structures at the Micrometer Scale.

    PubMed

    Hirt, Luca; Reiser, Alain; Spolenak, Ralph; Zambelli, Tomaso

    2017-01-04

    Currently, the focus of additive manufacturing (AM) is shifting from simple prototyping to actual production. One driving factor of this process is the ability of AM to build geometries that are not accessible by subtractive fabrication techniques. While these techniques often call for a geometry that is easiest to manufacture, AM enables the geometry required for best performance to be built by freeing the design process from restrictions imposed by traditional machining. At the micrometer scale, the design limitations of standard fabrication techniques are even more severe. Microscale AM thus holds great potential, as confirmed by the rapid success of commercial micro-stereolithography tools as an enabling technology for a broad range of scientific applications. For metals, however, there is still no established AM solution at small scales. To tackle the limited resolution of standard metal AM methods (a few tens of micrometers at best), various new techniques aimed at the micrometer scale and below are presently under development. Here, we review these recent efforts. Specifically, we feature the techniques of direct ink writing, electrohydrodynamic printing, laser-assisted electrophoretic deposition, laser-induced forward transfer, local electroplating methods, laser-induced photoreduction and focused electron or ion beam induced deposition. Although these methods have proven to facilitate the AM of metals with feature sizes in the range of 0.1-10 µm, they are still in a prototype stage and their potential is not fully explored yet. For instance, comprehensive studies of material availability and material properties are often lacking, yet compulsory for actual applications. We address these items while critically discussing and comparing the potential of current microscale metal AM techniques.

  4. Spontaneous formation of micrometer-size inorganic peapods.

    PubMed

    Roy, Soumyajit; Rijneveld-Ockers, Maria T; Groenewold, Jan; Kuipers, Bonny W M; Meeldijk, Hans; Kegel, Willem K

    2007-05-08

    We show that polyoxometalate (ammonium phosphomolybdate) Keggin in aqueous dispersions upon sonication spontaneously transforms into micrometer-sized, peapod-shaped structures. The formation of these peapods is preceded by the generation of spherical aggregates. The particles have been characterized experimentally by time-resolved dynamic light scattering (DLS), transmission electron microscopy (TEM), and scanning TEM with a high-angle annular dark field detector (STEM-HAADF) for energy-dispersive X-ray (STEM/EDX) elemental analyses. A pathway for the phenomenon is proposed.

  5. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    PubMed

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  6. Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cornet, D. M.; Mazzetti, V. G. M.; LaPierre, R. R.

    2007-01-01

    InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {-211} family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300nm were completely free of stacking faults.

  7. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    PubMed

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.

  8. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    PubMed

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  9. Surface forces of colloidal particles from micrometer to nanometer

    NASA Astrophysics Data System (ADS)

    Cho, Jeong-Min

    2003-10-01

    Surface forces of colloidal particles play critical roles in the macroscopic behavior of particulate systems such as dispersion and coagulation, adhesion and coating, and the rheological behavior of ceramic slurries. As particle size is decreased from micrometer to nanometer range, surface forces are increasingly important. Polyelectrolytes are the chemical additives commonly used to efficiently control the stabilization of the colloidal system. Their conformations on the solid surfaces as well as the interactions between the adsorbed polyelectrolytes are important issues in colloidal processing. Most experimental and theoretical approaches to the surface forces are based on particle sizes in the micrometer range. However, nanoparticles at close proximity or high solids loading are expected to show different behavior than what can be estimated from conventional theories such as continuum or mean field theories. My study examined the effect of pH, ionic strength, and molecular weight of the polyelectrolytes on the surface forces of colloidal particles by the interplay with the adsorption, turbidity, and direct surface force measurement in terms of the conformation on the solid surfaces. The colloid probe technique based on atomic force microscopy (AFM) is well established for micron size particles; and could be extended for nanosize particles by using carbon nanotubes as proximal probes. Nanotubes with their high aspect ratio avoid the contribution from cone shapes that happens with AFM tips. The difference in particle size significantly influences surface forces for sterically dispersed colloidal systems.

  10. P/N InP solar cells on Ge wafers

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  11. Microstructural and Compositional Relations of Granitoid Clasts in Lunar Breccias at the Micrometer to Sub-Micrometer Scale

    NASA Technical Reports Server (NTRS)

    Christoffersen, R.; Simon, J. I.; Mills, R. D.; Ross, D. K.; Tappa, M.

    2015-01-01

    Lunar granitoid lithologies have long been of interest for the information they provide on processes leading to silicic melt compositions on the Moon. The extraction of such melts over time affects the distribution and budget of incompatible materials (i.e., radiogenic heat producing elements and volatiles) of the lunar interior. We have recently shown that in addition to their high concentrations of incompatible lithophile elements, some granitoid clasts in lunar breccias have significant indigenous water contents in their alkali feldspars. This raises the importance of lunar granitoid materials in the expanding search for mineralogic/petrologic hosts of indigenous lunar water-related species. We are undertaking a detailed survey of the petrologic/mineralogical relations of granitoid clasts in lunar breccias to achieve a better understanding of the potential of these diverse assemblages as hosts for volatiles, and as candidates for additional isotope chronology studies. Our preliminary results reported here based on high-resolution field-emission SEM, EPMA and TEM studies uncover immense complexity in these materials at the micrometer to sub-micrometer scale that heretofore have not been fully documented.

  12. EL2-like defects in InP nanowires: An ab initio total energy investigation

    NASA Astrophysics Data System (ADS)

    Miwa, R. H.; Schmidt, T. M.; Fazzio, A.

    2007-04-01

    We have performed an ab initio total energy investigation, within the density-functional theory, of antisite defects in InP nanowires (InP NWs) grown along the [111] direction. Our total energy results indicate that (i) P antisites (PIn) are the most likely antisite defect compared with In antisites (InP) and (ii) the formation energies of P and In antisites do not depend on the NW diameter. In particular, in thin InP NWs, with diameters of ˜13Å , the PIn antisite exhibits a trigonal symmetry, lying at 0.15Å from the Td site, followed by a metastable configuration with PIn in an interstitial position ( 1.15Å from the Td site). We find a PIn-P dissociation energy of 0.33eV , and there is no EL2-like center for such a thin InP NW. However, EL2-like defects occur by increasing the NW diameter. For diameters of ˜18Å , the PIn-P dissociation energy increases to 0.53eV , which is 0.34eV lower compared with the PIn-P dissociation energy for the InP bulk phase, 0.87eV . We mapped the atomic displacements and calculated the relaxation energy, Franck-Condon shift, upon single excitation of PIn induced states in InP NW. The formation (or not) of EL2-like defects, PIn dissociation energy barrier, and the Franck-Condon energy shift can be tuned by the NW diameter.

  13. The (C2) 158 micrometer emission from the Horsehead nebula

    NASA Technical Reports Server (NTRS)

    Zhou, S.; Jaffe, D. T.; Howe, J. E.; Geis, N.; Herrmann, F.; Madden, S. C.; Poglitsch, A.; Stacey, G. J.

    1993-01-01

    The C II 158 micrometer line and the several rotational lines of CO, CO-13, and CS toward selected positions in the Horsehead extinction region in IC 434 are mapped. The observations show that the region has a gas density of about 10,000 cu cm and an external UV (Ultraviolet) flux to 20 to 100 times the average interstellar UV field. Although this is a regime where the C+ emission varies rapidly with UV intensity, fine structure line emission from gas with this range of physical conditions were not investigated previously. Comparisons of results with models of photodissociation regions show that existing plane parallel photodissociation region models are in general agreement with the observed intensity. It is not necessary to invoke a clumpy structure in the boundary layer to explain the observations, but the overall geometry of the cloud is important in determining the distribution of C+ emission.

  14. Diffusion of micrometer-sized soft particles in confinement

    NASA Astrophysics Data System (ADS)

    Jordan, Benjamin; Aptowicz, Kevin

    We investigate the diffusion of micrometer sized poly(N-isopropylacrylamide) (PNIPAM) gel particles in confinement. The influence of confinement on the transport of small particles is becoming increasingly important for microfluidics and bio-fluidics. Analytical solutions to this problem are limited to very unique geometries or gross approximations. Computational methods have provided more insight into the problem as well as experimental investigations. However, most research has focused on the hard-sphere problem. In this work, we will explore the diffusion of soft particles in confinement. The dynamics of the particles confined between two parallel walls is captured with video-microscopy. In addition, we use a recently developed technique to measurement confinement of particles in-situ with a precision of 1%. This poster will present some preliminary results of how confinement affects the diffusion of these soft particles. We acknowledge support from Grant DMR-1206231.

  15. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    NASA Technical Reports Server (NTRS)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  16. InP shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

    1989-01-01

    Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

  17. Mn doped InP nanowires: An ab initio study

    NASA Astrophysics Data System (ADS)

    Schmidt, Tome; Venezuela, Pedro; Arantes, Jeverson; Fazzio, Adalberto

    2006-03-01

    We investigated the electronic and magnetic properties of Mn doped InP nanowires. Our study was based on total energy density functional calculations. The Mn dopants were placed substitutionally in In atom sites. We have found that the most energetically favorable position for the Mn atom is near the surface. However, a small amount of Mn atoms will be located at ``bulk-like'' positions in the wire. When the Mn atoms are in ``bulk-like'' positions, the Mn-3d majority-spin-orbitals appear in two different regions of the valence band (VB): about 2.0 eV below the top of the VB and resonant with the top of the VB. In these cases there is also an empty orbital in the gap whit p-character. The total valence spin-densities (ρ- ρ), for a single Mn atom in any of the configurations studied here, show a strong localized magnetic moment around the Mn atom site. In order to study the magnetic coupling we also did calculations with two Mn atoms in each cell. For several configurations studied, we concluded that if both Mn atoms are in ``bulk-like'' positions the system presents ferromagnetic ordering. On the other hand, if at least one of the Mn atoms is located near the surface, there is no magnetic ordering or the system is antiferromagnetic.

  18. Preliminary design of the INPE's Solar Vector Magnetograph

    NASA Astrophysics Data System (ADS)

    Vieira, L. E. A.; de Gonzalez, A. L. Clúa; Lago, A. Dal; Wrasse, C.; Echer, E.; Guarnieri, F. L.; Cardoso, F. Reis; Guerrero, G.; Costa, J. Rezende; Palacios, J.; Balmaceda, L.; Alves, L. Ribeiro; da Silva, L.; Costa, L. L.; Sampaio, M.; Soares, M. C. Rabello; Barbosa, M.; Domingues, M.; Rigozo, N.; Mendes, O.; Jauer, P.; Dallaqua, R.; Branco, R. H.; Stekel, T.; Gonzalez, W.; Kabata, W.

    2015-10-01

    We describe the preliminary design of a magnetograph and visible-light imager instrument to study the solar dynamo processes through observations of the solar surface magnetic field distribution. The instrument will provide measurements of the vector magnetic field and of the line-of-sight velocity in the solar photosphere. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in reaching the scientific goals of The Atmospheric and Space Science Coordination (CEA) at the Brazilian National Institute for Space Research (INPE). In particular, the CEA's space weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is acquiring progressively the know-how to build state-of-the-art solar vector magnetograph and visible-light imagers for space-based platforms to contribute to the efforts of the solar-terrestrial physics community to address the main unanswered questions on how our nearby Star works.

  19. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  20. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

    NASA Astrophysics Data System (ADS)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L.; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B.; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-01

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n+-i-n+ InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  1. InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers.

    SciTech Connect

    Overberg, Mark E.; Cederberg, Jeffrey George

    2010-09-01

    InP substrates form the starting point for a wide variety of semiconductor devices. The surface morphology produced during epitaxy depends critically on the starting substrate. We evaluated (1 0 0)-oriented InP wafers from three different vendors by growing thick (5 mu m) lattice-matched epilayers of InP, Gain As, and AlInAs. We assessed the surfaces with differential interference contrast microscopy and atomic force microscopy. Wafers with near singular (1 0 0) orientations produced inferior surfaces in general. Vicinal substrates with small misorientations improved the epitaxial surface for InP dramatically, reducing the density of macroscopic defects while maintaining a low RMS roughness. GaInAs and AlInAs epitaxy step-bunched forming undulations along the miscut direction. Sulfur-doped wafers were considered for singular (1 0 0) and for 0.2 degrees misorientation toward (1 1 0). We found that mound defects observed for InP and GaInAs layers on iron-doped singular wafers were absent for singular sulfur-doped wafers. These observations support the conclusion that dislocation termination at the surface and expansion of the step spiral lead to the macroscopic defects observed.

  2. Single n(+)-i-n(+) InP nanowires for highly sensitive terahertz detection.

    PubMed

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n(+)-i-n(+) InP nanowires. The axial doping profile of the n(+)-i-n(+) InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n(+)-i-n(+) InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  3. Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures

    DTIC Science & Technology

    2010-03-01

    OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT ELEVATED TEMPERATURES THESIS...ENP/10-M08 OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT ELEVATED TEMPERATURES THESIS Presented to the Faculty Department...2010 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED AFIT/GAP/ENP/10-M08 OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT

  4. Optical and structural properties of sulfur-doped ELOG InP on Si

    NASA Astrophysics Data System (ADS)

    Sun, Yan-Ting; Junesand, Carl; Metaferia, Wondwosen; Kataria, Himanshu; Julian, Nick; Bowers, John; Pozina, Galia; Hultman, Lars; Lourdudoss, Sebastian

    2015-06-01

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO2 mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  5. Defect reaction network in Si-doped InP : numerical predictions.

    SciTech Connect

    Schultz, Peter Andrew

    2013-10-01

    This Report characterizes the defects in the defect reaction network in silicon-doped, n-type InP deduced from first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si-doped InP until culminating in immobile reaction products. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon-related defects in the reaction network. This Report serves to extend the results for intrinsic defects in SAND 2012-3313: %E2%80%9CSimple intrinsic defects in InP: Numerical predictions%E2%80%9D to include Si-containing simple defects likely to be present in a radiation-induced defect reaction sequence.

  6. Nucleation and growth evolution of InP dots on InGaP/GaAs

    NASA Astrophysics Data System (ADS)

    Bortoleto, J. R. R.; Gazoto, A.; Brasil, M. J. S. P.; Meneses, E. A.; Cotta, M. A.

    2010-07-01

    We have investigated the evolution in the heteroepitaxy of InP on InGaP/GaAs (0 0 1) layers from the initial formation of a strained wetting layer (WL) up to the development of quantum dots. Atomic force microscopy and RHEED as well as continuous and time-resolved photoluminescence measurements provide evidence of four main stages for InP growth evolution. Our results indicate that the InP dot formation occurs according to the Stranski-Krastanov growth mode coupled to a WL erosion mechanism driven by the spatially variable strain field present in the WL. Moreover, the correlation of morphological and optical data indicates the stability of dot shapes and interfaces in this system.

  7. Optical and structural properties of sulfur-doped ELOG InP on Si

    SciTech Connect

    Sun, Yan-Ting Junesand, Carl; Metaferia, Wondwosen; Kataria, Himanshu; Lourdudoss, Sebastian; Julian, Nick; Bowers, John; Pozina, Galia; Hultman, Lars

    2015-06-07

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO{sub 2} mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  8. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  9. Pneumatic System for Concentration of Micrometer-Size Lunar Soil

    NASA Technical Reports Server (NTRS)

    McKay, David; Cooper, Bonnie

    2012-01-01

    A report describes a size-sorting method to separate and concentrate micrometer- size dust from a broad size range of particles without using sieves, fluids, or other processes that may modify the composition or the surface properties of the dust. The system consists of four processing units connected in series by tubing. Samples of dry particulates such as lunar soil are introduced into the first unit, a fluidized bed. The flow of introduced nitrogen fluidizes the particulates and preferentially moves the finer grain sizes on to the next unit, a flat plate impactor, followed by a cyclone separator, followed by a Nuclepore polycarbonate filter to collect the dust. By varying the gas flow rate and the sizes of various orifices in the system, the size of the final and intermediate particles can be varied to provide the desired products. The dust can be collected from the filter. In addition, electron microscope grids can be placed on the Nuclepore filter for direct sampling followed by electron microscope characterization of the dust without further handling.

  10. Experimental Study on Electrical Breakdown for Devices with Micrometer Gaps

    NASA Astrophysics Data System (ADS)

    Meng, Guodong; Cheng, Yonghong; Dong, Chengye; Wu, Kai

    2014-12-01

    The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro & nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2 μm to 40 μm were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages: (1) a constantly decreasing region (the gap width d < 5 μm), where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; (2) a plateau region with a near constant breakdown potential (5 μm < d < 10 μm) (3) a region for large gaps that adhered to Paschen's curve (d > 10 μm). And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.

  11. Flow and evaporation in single micrometer and nanometer scale pipes

    SciTech Connect

    Velasco, A. E.; Yang, C.; Siwy, Z. S.; Taborek, P.; Toimil-Molares, M. E.

    2014-07-21

    We report measurements of pressure driven flow of fluids entering vacuum through a single pipe of micrometer or nanometer scale diameter. Nanopores were fabricated by etching a single ion track in polymer or mica foils. A calibrated mass spectrometer was used to measure the flow rates of nitrogen and helium through pipes with diameter ranging from 10 μm to 31 nm. The flow of gaseous and liquid nitrogen was studied near 77 K, while the flow of helium was studied from the lambda point (2.18 K) to above the critical point (5.2 K). Flow rates were controlled by changing the pressure drop across the pipe in the range 0–31 atm. When the pressure in the pipe reached the saturated vapor pressure, an abrupt flow transition was observed. A simple viscous flow model is used to determine the position of the liquid/vapor interface in the pipe. The observed mass flow rates are consistent with no slip boundary conditions.

  12. Cryogenic Fourier transform infrared spectrometer from 4 to 20 micrometers

    NASA Astrophysics Data System (ADS)

    Kaplan, Simon G.; Woods, Solomon I.; Jung, Timothy M.; Carter, Adriaan C.

    2010-07-01

    We describe the design and performance of a cryogenic Fourier transform spectrometer (Cryo-FTS) operating at a temperature of approximately 15 K. The instrument is based on a porch-swing scanning mirror design with active alignment stabilization using a fiber-optic coupled diode laser and voice-coil actuator mechanism. It has a KBr beamsplitter and has been integrated into an infrared radiometer containing a calibrated Si:As blocked impurity band (BIB) detector. Due to its low operating temperature, the spectrometer exhibits very small thermal background signal and low drift. Data from tests of basic spectrometer function, such as modulation efficiency, scan jitter, spectral range, and spectral resolution are presented. We also present results from measurements of faint point-like sources in a low background environment, including background, signal offset and gain, and spectral noise equivalent power, and discuss the possible use of the instrument for spectral characterization of ground-based infrared astronomy calibration sources. The Cryo-FTS is presently limited to wavelengths below 25 micrometers but can be in principle extended to longer wavelengths with changes in beamsplitter and detector.

  13. High Beginning-of-Life Efficiency p/n InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Weizer, Victor G.; Jenkins, Phillip P.; Ringel, Steven A.; Scheiman, David A.; Wilt, David M.; Brinker, David J.

    2004-01-01

    We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.

  14. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

    NASA Technical Reports Server (NTRS)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

    1997-01-01

    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  15. Beyond G-band : a 235 GHz InP MMIC amplifier

    NASA Technical Reports Server (NTRS)

    Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

    2005-01-01

    We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

  16. Fabrication of n(+)/p InP solar cells on silicon substrates

    NASA Technical Reports Server (NTRS)

    Keavney, C. J.; Vernon, S. M.; Haven, V. E.; Wojtczuk, S. J.; Al-Jassim, M. M.

    1989-01-01

    InP films were grown by MOCVD on Si GaAs substrates (as well as on InP substrates, included as controls), and were used to fabricate solar cells, using the Spitzer et al. (1987) technique. Contact to the substrate was made with Al-Ti-Pd-Ag to the Si wafers and with Au-Zn alloy to the GaAs wafers, while contract to the front was made with Cr-Au-Ag. Air mass zero efficiencies were found to be 7.1 percent for Si-substrate cells and 9.4 percent for GaAs-substrate cells.

  17. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    DTIC Science & Technology

    1995-01-01

    and SrF2 layers onto InP(100) have been grown at 350’C under ultra-high vacuum conditions using epitaxial and bulk substrates. MBE and Laser Vacuum... SrF2 /InP diodes prepared by sublimation of the fluoride under vacuum, an important modulation without hysteresis of the surface potential of the...grew the thin films of SrF2 by sublimation under a classical vacuum (10-7 Torr). They showed by Rutherford backscattering and by XPS measurements that

  18. Spatially controlled, nanoparticle-free growth of InP nanowires

    NASA Astrophysics Data System (ADS)

    Poole, P. J.; Lefebvre, J.; Fraser, J.

    2003-09-01

    A technique for the growth of InP nanowires, which does not rely on the vapor-liquid-solid growth mechanism, is demonstrated using selective-area chemical beam epitaxy. The nanowires are precisely positioned on an InP wafer and are always aligned along the available substrate <111>A directions. They have diameters as small as 40 nm, and typical lengths of 600 nm. They are found to be optically active, with thin embedded InAs layers showing quantum-dot-like behavior with well-defined excited states.

  19. Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

    NASA Technical Reports Server (NTRS)

    Bothra, S.; Tyagi, S. D.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.

  20. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    NASA Technical Reports Server (NTRS)

    Bhimnathwala, H. G.; Tyagi, S. D.; Bothra, S.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

  1. Carrier removal and defect behavior in p-type InP

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  2. Nucleosome organization of the yeast 2-micrometer DNA plasmid: a eukaryotic minichromosome.

    PubMed Central

    Nelson, R G; Fangman, W L

    1979-01-01

    The eukaryotic microorganism Saccharomyces cerevisiae contains 50-100 copies per cell of a circular plasmid called 2-micrometer DNA. The intracellular structure of these molecules, which represent about 4% of the total DNA, was examined by digestion of total cellular chromatin with micrococcal nuclease (nucleate 3'-oligonucleotidohydrolase, EC 3.1.31.1). Nuclease-resistant DNA fragments were fractionated by gel electrophoresis and 2-micrometer DNA sequences were detected by hybridization. The 2-micrometer and chromosomal DNA digestion patterns were very similar indicating that both types of DNA are condensed into nucleosomes. An analysis of these digestion patterns showed that the kinetics of digestion of 2-micrometer chromatin and total chromatin are similar and that both have the same nucleosome repeat length of about 165 base pairs. Native 2-micrometer plasmids were examined by zone sedimentation in sucrose gradients containing 0.15 M NaCl and were found to have a sedimentation constant of 75 S, about 3 times the sedimentation constant of protein-free 2-micrometer DNA. This sedimentation property is what would be expected for a 2-micrometer DNA minichromosome. We conclude that within the cell 2-micrometer DNA molecules are organized in a chromatin structure very similar to that of the yeast chromosomes. Images PMID:392520

  3. 78 FR 73698 - Prevention of Significant Deterioration for Particulate Matter Less Than 2.5 Micrometers...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-09

    ... Matter Less Than 2.5 Micrometers--Significant Impact Levels and Significant Monitoring Concentration... the Significant Impact Levels (SILs) for particulate matter less than 2.5 micrometers (PM 2.5 ). The...-1744. FOR FURTHER INFORMATION CONTACT: Mr. Ben Garwood, Office of Air Quality Planning and...

  4. Near-infrared continuum and 3.3 micrometer(s) polycyclic aromatic hydrocarbon imaging of the starburst ring in the type 1 Seyfert galaxy NGC 7469

    NASA Technical Reports Server (NTRS)

    Mazzarella, J. M.; Voit, G. M.; Soifer, B. T.; Matthews, K.; Graham, J. R.; Armus, L.; Shupe, D.

    1994-01-01

    High resolution near-infrared images of the type 1 Seyfert galaxy NGC 7469 have been obtained to probe its dusty nuclear environment. Direct J, H, and K images are relatively featureless, but residual images created by subtracting a smooth model based on best-fitting elliptical isophotes reveal a tight inner spiral whose high surface-brightness portions correspond to a previously detected 3 sec (1 kpc) diameter ring of radio continuum emission. The inner infrared spiral arms extended approximately equal to 4 sec NW and SE from the nucleus, and the NW arm joins up with large-scale spiral structure visible in the R band. The residual images also show a bar-like structure aligned with the brightest infrared/radio hotspots at PA approximately equal to 50 deg. Three infrared hotspots are detected which align remarkably well with 6 cm radio continuum sources. The near-infrared ring and the hotspots are visible in the residual images, and in a high-resolution direct K-band image restored to an effective resolution of 0.65 sec (FWHM) using the Richardson-Lucy algorithm. The infrared hotspots have luminosities of nuL(sub nu) (2.2 micrometer(s)) approximately equal to 10(exp 8) solar luminosity (M(sub k) approximately equal to -16 mag), suggesting they are either giant H II regions or individual supernovae. The two brightest regions may be associated with enhanced star formation triggered by orbit crowding of gas where spiral arms emerge from an inner bar. Narrowband (delta lambda/lambda approximately 1.5%) imaging in the 3.28 micrometer(s) dust emission feature and surrounding continuum confirms the 3 sec diameter 3.28 micrometer(s) emission region detected previously using multiaperture photometry. The extended polycyclic aromatic hydrocarbon (PAH) emission is slightly elongated and aligned with published 1O III1 line emission and 12.5 micrometer(s) continuum emission, apparently tracing the starburst. The presence of approximately equal to 25% of the total 3.28 micrometer(s

  5. THE STICKINESS OF MICROMETER-SIZED WATER-ICE PARTICLES

    SciTech Connect

    Gundlach, B.; Blum, J.

    2015-01-01

    Water ice is one of the most abundant materials in dense molecular clouds and in the outer reaches of protoplanetary disks. In contrast to other materials (e.g., silicates), water ice is assumed to be stickier due to its higher specific surface energy, leading to faster or more efficient growth in mutual collisions. However, experiments investigating the stickiness of water ice have been scarce, particularly in the astrophysically relevant micrometer-sized region and at low temperatures. In this work, we present an experimental setup to grow aggregates composed of μm-sized water-ice particles, which we used to measure the sticking and erosion thresholds of the ice particles at different temperatures between 114 K and 260 K. We show with our experiments that for low temperatures (below ∼210 K), μm-sized water-ice particles stick below a threshold velocity of 9.6 m s{sup –1}, which is approximately 10 times higher than the sticking threshold of μm-sized silica particles. Furthermore, erosion of the grown ice aggregates is observed for velocities above 15.3 m s{sup –1}. A comparison of the experimentally derived sticking threshold with model predictions is performed to determine important material properties of water ice, i.e., the specific surface energy and the viscous relaxation time. Our experimental results indicate that the presence of water ice in the outer reaches of protoplanetary disks can enhance the growth of planetesimals by direct sticking of particles.

  6. Dilute bismuthides on inp platform: growth, characterization, modeling and application

    NASA Astrophysics Data System (ADS)

    Zhong, Yujun

    Conventional III-V compounds (GaAs/ InGaAs/ InAlAs) containing a small amount of bismuth are called dilute bismuthides (a.k.a. dilute bismides). They are a relatively new class of materials and have interesting optical and electrical properties that lead to a large number of novel applications in mid-infrared(mid-IR) optoelectronics, IR transparent contact materials, photovoltaics and thermoelectrics. This dissertation focuses on the growth and characterization of dilute bismuthides with potential use in the first three applications. Incorporating Bi into conventional III-V compounds will cause a unique phenomenon called valence band anticrossing(VBAC). The interaction between the bismuth atom and the matrix material will make the valence band split into two bands: E+ and E-; E+ is closer to the conduction band than the original valence band of the matrix material. Using this effect, we can adjust the band gap and the valence band position of dilute bismuthides by controlling the bismuth concentration. The growth of bismuth-containing materials using molecular beam epitaxy (MBE) requires low growth temperature and strict stoichiometric III-V ratio. This dissertation will discuss in detail the optimum growth condition of InGaBiAs, the challenge of increasing the bismuth concentration, and the possible solution to produce high bismuth concentration samples. Accordingly, composition, strain and relaxation, surface morphology, optical properties and electrical properties of InGaBiAs thin films are characterized to study these materials. The first application of InGaBiAs is mid-IR optoelectronic materials. The band gap of InGaBiAs can be tuned within the mid-IR range, and the film can be produced being lattice-matched to the InP substrate. In addition, degenerately doped InGaBiAs:Si is an ideal choice for the transparent contact material in the infrared range due to its high transmittance and conductivity in this wavelength range. We next proposed a new upconversion

  7. Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos

    NASA Astrophysics Data System (ADS)

    Romanov, S. G.; Sotomayor Torres, C. M.; Yates, H. M.; Pemble, M. E.; Butko, V.; Tretijakov, V.

    1997-07-01

    Three-dimensional arrays of structurally confined InP wire-like nanostructures were grown in channels (nanotubes) of a chrysotile asbestos matrix by metalorganic chemical vapor deposition. The formation of the InP compound was confirmed by absorption spectroscopy, X-ray diffraction and Raman scattering. It is shown that the density of states around the band edge increases with the InP loading of the matrix. Photoluminescence spectra of the asbestos filled in with InP consist mainly of two bands: a high energy band which is interpreted to be associated with charge transfer from InP to defect states of the asbestos and a low energy band which is associated with energy relaxation in the InP deposit itself. We show that the optical properties of this material are dominated by the size and dimensionality of the pore system of the matrix for heavy loading and by the semiconductor-to-matrix interface for light loading of the matrix with InP.

  8. Voc Degradation in TF-VLS Grown InP Solar Cells

    SciTech Connect

    Sun, Yubo; Sun, Xingshu; Johnston, Steve; Sutter-Fella, Carolin M.; Hettick, Mark; Javey, Ali; Bermel, Peter

    2016-11-21

    Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the whole sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.

  9. Status and future directions of InP solar cell research

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.

    1992-01-01

    An overview of the current status and future directions of InP space solar cell research is provided. The scope of the paper does not allow us to discuss other recent major developments in InP cell modeling, contacts, and characterization, or developments in other solar cell materials. Solar cells made from InP and related materials are not expected to be used in the near future for terrestrial applications, but significant Air-Mass1.5 (AM1.5) cell efficiencies are given for comparison. This paper deals with the developments in single-junction cells, multijunction tandem cells, and space flight testing, including radiation effects. Concentrator InP solar cells are also discussed, since they offer the possibility of simultaneous thermal and current injection annealing. These cells also promise cost effectiveness and the concentrator elements may provide cells with extra protection from space radiation. The concluding section addresses the steps to be taken in the future and provides guidelines for further research and development.

  10. Properties of barrier contacts with nanosize TiB{sub x} layers to InP

    SciTech Connect

    Arsentyev, I. N. Bobyl, A. V.; Tarasov, I. S.; Boltovets, N. S. Ivanov, V. N.; Belyaev, A. E.; Kamalov, A. B.; Konakova, R. V. Kudryk, Ya. Ya.; Lytvyn, O. S.; Milenin, V. V.; Russu, E. V.

    2008-07-15

    Structural and electrical properties of Au-TiB{sub x}-nn{sup +}n{sup ++}-InP and TiB{sub x}-nn{sup +}n{sup ++}-InP multilayer barrier structures on standard ('rigid') and soft ('porous')n{sup ++}-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase epitaxy, metallic layers formed by magnetron sputtering, and porous substrates fabricated by electrochemical etching of the standard InP. Samples on porous substrates have the following advantages: leakage currents in their reverse current-voltage characteristics are ten times lower; the range of the exponential rise in current in the forward characteristics is an order of magnitude wider; the changes in the ideality factor and the Schottky barrier height, observed as the contact area varies by a factor of 100, are three and {approx}10 times smaller, respectively; and the structure of the layers is more stable in annealing at up to 800{sup o}C.

  11. Lasing characteristics of InAs quantum dot laers on InP substrate

    NASA Technical Reports Server (NTRS)

    Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

    2003-01-01

    Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

  12. InGaAsP CW Lasers on (110) InP Substrates

    NASA Technical Reports Server (NTRS)

    Hawrylo, F. Z.

    1983-01-01

    Quality InGaAsP/InP CW laser structures grown by conventional liquidphase epitaxy on (110) InP substrates without using special growth procedures. Improved surface quality and grown-layer morphology are attributable to nearlyperfect surface stoichiometry of (110) surface which makes available equal numbers of In and P deposition sites.

  13. Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

    NASA Technical Reports Server (NTRS)

    Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvy, M.

    1998-01-01

    We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

  14. Investigation of High Speed ICs in InP Using MIS Structures.

    DTIC Science & Technology

    1984-10-01

    3x3 digital multiplier for demonstration of the InP MISFET technolgy provides MSI levels of circuit integration as well as a self test mode of circuit...variables such as doping levels, oxide capacitance, mobility , transconductance, and even velocity saturation effects for short channel lengths. The end

  15. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    PubMed Central

    2011-01-01

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa PMID:21711809

  16. Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Shalkhauser, Kurt A.; Messick, Louis J.; Nguyen, Richard; Schmitz, Dietmar; Jurgensen, Holger

    1991-01-01

    The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

  17. InP single-junction concentrator cell. Semi-annual report, October 1, 1980-March 31, 1981

    SciTech Connect

    Gregory, P.E.

    1981-01-01

    The purpose of this work is to develop a glass-sealed back-contacted InP or InGaAsP solar cell for use in concentrator systems. Work to be performed in developing this cell includes growing the InP epitaxial layers needed for cells and test structures, developing a model to be used in optimizing the cell structure, measurement of InP parameters necessary for use in the model, and developing the glass-bonding and back-contacting scheme. Accomplishments in these areas are discussed.

  18. Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, Vik J.; Shalkhauser, K. A.; Messick, L. J.; Nguyen, R.; Schmitz, D.; Juergensen, H.

    1991-01-01

    The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

  19. Some thermal and mechanical properties of InP essential to crystal growth modeling

    NASA Astrophysics Data System (ADS)

    Jordan, A. S.

    1985-06-01

    The key physical constants required in a realistic modeling of the Czochralski growth of InP have been critically assessed. In particular, we evaluated the (1) thermal expansion coefficient (α) and density from the fractional change in length, (2) thermal conductivity ( K) and diffusivity (κ), (3) elastic stiffness constants, and (4) heat capacity over a wide temperature range for this compound. Semi-empirical formulae are provided from which one can obtain reliable property values up to the melting point of InP ( Tf). At Tf -200 K (the average ambient temperature of the B 2O 3 encapsulant), we recommend α=6.8×10 -6 K -1, K =0.11 W/cm·K, and κ=0.0624 cm 2/s. These parameters in conjunction with the recently determined critical resolved shear stress of undoped and heavily doped InP at elevated temperatures indicate a lesser tendency for thermal stress induced dislocation generation during the LEC pulling of InP when compared with GaAs. As an illustrative example, we computed the dislocation distribution in a 111} InP wafer. It is shown that an undoped 4.5 cm diameter crystal prepared by the LEC technique contains a high density of dislocations (especially at the edge) and exhibits a sixfold "Star of David" pattern. On the other hand, material incorporating 1.3×10 19 cm -3 Ge with the same diameter should be dislocation-free apart of a 0.1 cm rim along its circumference.

  20. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    NASA Astrophysics Data System (ADS)

    Mamouri, R. E.; Ansmann, A.

    2015-12-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN) and with radius > 250 nm (APC250, reservoir of favorable INP), as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization) can be retrieved from lidar-derived aerosol extinction coefficients (AEC) with relative uncertainties of a factor of around 2 (APC50), and of about 25-50 % (APC250, ASC). Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke). We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine). Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN) and published INP parameterization schemes (with APC250 and ASC as input) we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  1. High Temperature Mechanical Behavior of Polycrystalline Alumina from Mixed Nanometer and Micrometer Powders

    NASA Technical Reports Server (NTRS)

    Goldsby, Jon C.

    2001-01-01

    Sintered aluminum oxide materials were formed using commercial methods from mechanically mixed powders of nano-and micrometer alumina. The powders were consolidated at 1500 and 1600 C with 3.2 and 7.2 ksi applied stress in argon. The conventional micrometer sized powders failed to consolidate. While 100 percent nanometer-sized alumina and its mixture with the micrometer powders achieved less than 99 percent density. Preliminary high temperature creep behavior indicates no super-plastic strains. However high strains (less than 0.65 percent) were generated in the nanometer powder, due to cracks and linked voids initiated by cavitation.

  2. On the Nature of the First Galaxies Selected at 350 Micrometers

    NASA Technical Reports Server (NTRS)

    Khan, Sophia A.; Chanial, Pierre F.; Willner, S. P.; Pearson, Chris P.; Ashby, M. L. N.; Benford, Dominic J.; Clements, David L.; Dye, Simon; Farrah, Duncan; Fazio, G. G.; Huang, J. S.; Lebouteiller, V.; Le Floc'H, Emeric; Mainetti, Gabriele; Harvey Moseley, S.; Negrello, Mattia; Serjeant, Stephen; Shafer, Richard A.; Staguhn, Johannes; Sumner, Timothy J.; Vaccari, Mattia

    2009-01-01

    We present constraints on the nature of the first galaxies selected at 350 micrometers. The sample includes galaxies discovered in the deepest blank-field survey at 350 micrometers (in the Bo6tes Deep Field) and also later serendipitous detections in the Lockman Hole. In determining multiwavelength identifications, the 350 lam position and map resolution of the second generation Submillimeter High Angular Resolution Camera are critical, especially in the cases where multiple radio sources exist and the 24 micrometer counterparts are unresolved. Spectral energy distribution templates are fitted to identified counterparts, and the sample is found to comprise IR-luminous galaxies at 1 < z < 3 predominantly powered by star formation. The first spectrum of a 350 micrometer selected galaxy provides an additional confirmation, showing prominent dust grain features typically associated with star-forming galaxies. Compared to submillimeter galaxies selected at 850 and 1100 micrometers, galaxies selected at 350 micrometers have a similar range of far-infrared color temperatures. However, no 350 micrometer selected sources are reliably detected at 850 or 1100 micrometers. Galaxies in our sample with redshifts 1 < z < 2 show a tight correlation between the far- and mid-infrared flux densities, but galaxies at higher redshifts show a large dispersion in their mid- to far-infrared colors. This implies a limit to which the mid-IR emission traces the far-IR emission in star-forming galaxies. The 350 micrometer flux densities (15 < S(sub 350) < 40 mJy) place these objects near the Herschel/SPIRE 350 micrometer confusion threshold, with the lower limit on the star formation rate density suggesting the bulk of the 350 micrometers contribution will come from less luminous infrared sources and normal galaxies. Therefore, the nature of the dominant source of the 350 micrometers background-star-forming galaxies in the epoch of peak star formation in the universe-could be more effectively

  3. Acid dissolution experiments - Carbonates and the 6.8-micrometer bands in interplanetary dust particles

    NASA Technical Reports Server (NTRS)

    Sandford, S. A.

    1986-01-01

    A chemical dissolution experiment on an interplanetary dust particle (IDP) showed that carbonates, not acid-insoluble organic compounds, were responsible for virtually all the absorption at 6.8 micrometers seen in the infrared spectra of this particle. The IDP examined had an infrared spectrum characteristic of layer-lattice silicates and belongs to a class of IDP's whose spectra resemble those of protostellar objects like W33 A, which also exhibit a band at 6.8 micrometers.

  4. Acid dissolution experiments - Carbonates and the 6.8-micrometer bands in interplanetary dust particles

    NASA Astrophysics Data System (ADS)

    Sandford, S. A.

    1986-03-01

    A chemical dissolution experiment on an interplanetary dust particle (IDP) showed that carbonates, not acid-insoluble organic compounds, were responsible for virtually all the absorption at 6.8 micrometers seen in the infrared spectra of this particle. The IDP examined had an infrared spectrum characteristic of layer-lattice silicates and belongs to a class of IDP's whose spectra resemble those of protostellar objects like W33 A, which also exhibit a band at 6.8 micrometers.

  5. Infrared images of jupiter at 5-micrometer wavelength during the voyager 1 encounter.

    PubMed

    Terrile, R J; Capps, R W; Backman, D E; Becklin, E E; Cruikshank, D P; Beichman, C A; Brown, R H; Westphal, J A

    1979-06-01

    A coordinated program to observe Jupiter at high spatial resolution in the 5-micrometer wavelength region was undertaken to support Voyager 1 imaging and infrared radiation experiment targeting. Jupiter was observed over a 5-month period from Palomar and Mauna Kea observatories. The frequency of observations allowed the selection of interesting areas for closer Voyager examination and also provided good short-term monitoring of variations in cloud morphology. Significant global changes in the 5-micrometer distribution are seen over this time period.

  6. Infrared images of Jupiter at 5-micrometer wavelength during the Voyager 1 encounter

    NASA Technical Reports Server (NTRS)

    Terrile, R. J.; Capps, R. W.; Backman, D. E.; Becklin, E. E.; Cruikshank, D. P.; Beichman, C. A.; Brown, R. H.; Westphal, J. A.

    1979-01-01

    A coordinated program to observe Jupiter at high spatial resolution in the 5-micrometer wavelength region was undertaken to support Voyager 1 imaging and infrared radiation experiment targeting. Jupiter was observed over a 5-month period from Palomar and Mauna Kea observatories. The frequency of observations allowed the selection of interesting areas for closer Voyager examination and also provided good short-term monitoring of variations in cloud morphology. Significant global changes in the 5-micrometer distribution are seen over this time period.

  7. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  8. In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Hong-Liang; Terada, Yuki; Shimogaki, Yukihiro; Nakano, Yoshiaki; Sugiyama, Masakazu

    2009-10-01

    An in situ surface passivation of InP(100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 °C is free of P and In oxides even after exposure to air. The enhancement of photoluminescence intensity confirms that H2S passivation of an InP epilayer can reduce the surface defects. It is shown that H2S treatment results in In-S bonds, which dominate the sulfur-passivated InP surface, effectively suppressing interface oxidation during the subsequent ultrathin Al2O3 dielectric film growth.

  9. Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode

    NASA Astrophysics Data System (ADS)

    Geydt, P.; Dunaevskiy, M.; Alekseev, P.; Kakko, J.-P.; Haggrén, T.; Lähderanta, E.; Lipsanen, H.

    2016-11-01

    In this manuscript, we present the study of elastic properties of InP nanowires with help of scanning probe microscope in advanced PeakForce Tapping® regime. The measuring method was developed in order to investigate the Young's modulus of these cone-shaped structures with significant accuracy. The difference in InP elasticity for wurtzite phase and zinc- blende phase was revealed. It was shown that elastic modulus of InP nanowires significantly increases from 60 GPa to more than 100 GPa when diameter of a nanowire is reduced below 50 nm. The core-shell model for InP nanowire was used for the explanation of this effect.

  10. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    NASA Astrophysics Data System (ADS)

    Mamouri, Rodanthi-Elisavet; Ansmann, Albert

    2016-05-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols), n100, dry (particles with dry radius > 100 nm, reservoir of desert dust CCN), and of n250, dry (particles with dry radius > 250 nm, reservoir of favorable INP), as well as profiles of the particle surface area concentration sdry (used in INP parameterizations) can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5-2 in the case of n50, dry and n100, dry and of about 25-50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine) and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input) and available INP parameterization schemes (with n250, dry and sdry as input) we finally compute

  11. Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

  12. Multiplexed chirp waveform synthesizer

    DOEpatents

    Dudley, Peter A.; Tise, Bert L.

    2003-09-02

    A synthesizer for generating a desired chirp signal has M parallel channels, where M is an integer greater than 1, each channel including a chirp waveform synthesizer generating at an output a portion of a digital representation of the desired chirp signal; and a multiplexer for multiplexing the M outputs to create a digital representation of the desired chirp signal. Preferably, each channel receives input information that is a function of information representing the desired chirp signal.

  13. Far field emission profile of pure wurtzite InP nanowires

    SciTech Connect

    Bulgarini, Gabriele Reimer, Michael E.; Zwiller, Val; Dalacu, Dan; Poole, Philip J.; Lapointe, Jean

    2014-11-10

    We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to the nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.

  14. Implementation of a quality control system for the Automatic Weather Stations Network from CPTEC/INPE

    NASA Astrophysics Data System (ADS)

    Ferreira, A.; Almeida, W. G.

    2007-05-01

    The observations from INPE's Automatic Weather Stations Network are available for free distribution in the CPTEC webpage just after its processing. Because the automated meteorological stations can report in a high temporal frequency and its quantity is growing, they will be more important over the time. To keep the quality of the distributed data and to help the network management it is needed a complex automated quality control system. To meet these objectives we installed in the CPTEC/INPE the quality control system from MADIS (Meteorological Assimilation Data Ingest System). A software developed by the Forecast Systems Laboratory, from NOAA (National Oceanic and Atmospheric Administration). In this paper we describe this QC system and the results.

  15. The effect of phosphorus and sulfur treatment on the surface properties of InP

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

    1988-01-01

    Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

  16. Influence of growth conditions on the performance of InP nanowire solar cells.

    PubMed

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A; Plissard, Sebastien R; Wang, Jia; Koenraad, Paul M; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-11-11

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  17. Influence of growth conditions on the performance of InP nanowire solar cells

    NASA Astrophysics Data System (ADS)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A.; Plissard, Sebastien R.; Wang, Jia; Koenraad, Paul M.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2016-11-01

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  18. Effects of Be doping on InP nanowire growth mechanisms

    SciTech Connect

    Yee, R. J.; Gibson, S. J.; LaPierre, R. R.; Dubrovskii, V. G.

    2012-12-24

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  19. Effects of Be doping on InP nanowire growth mechanisms

    NASA Astrophysics Data System (ADS)

    Yee, R. J.; Gibson, S. J.; Dubrovskii, V. G.; LaPierre, R. R.

    2012-12-01

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below ˜1018 cm-3, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

  20. Optical excitation of trapping states in Fe doped InP

    NASA Astrophysics Data System (ADS)

    Giessner, J.

    1983-06-01

    The knowledge that defect states affect the performance and speed of semiconductors is well known. Defect and trapping states are categorized according to their sex (hole or electron trap), energy in the gap and capture cross sections. The Deep Level Transient Spectroscopy (DLTS) technique that is useful for electrical pulsing, becomes increasingly profitable using optical pulsing. The optical pulsing was accomplished using a simple, but efficient, infrared light emitting diode (LED). The LED had the fortunate property that with decreasing temperature, the average energy output of the LED stayed about equal to the bandgap for the 3-5 semiconductor InP. Because of these findings, emphasis was put on Fe-doped Inp using LED excitation. These particular samples are being studied by Naval Research Labs (NRL) in connection with lasing that results from Fe transitions. Models were set up for both the p+n junction and Fe transitions to help explain experimental results obtained.

  1. Minority-carrier lifetime in InP as a function of light bias

    NASA Technical Reports Server (NTRS)

    Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

    1995-01-01

    Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

  2. Effect of dislocations on properties of heteroepitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Curtis, H. B.; Brinker, D. J.; Jenkins, P.; Faur, M.

    1991-01-01

    The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

  3. Minority carrier diffusion length and edge surface-recombination velocity in InP

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Bailey, Sheila G.

    1993-01-01

    A scanning electron microscope was used to obtain the electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure the edge surface-recombination velocity. These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (Donolato, 1982) to obtain the electron (minority carrier) diffusion length.

  4. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  5. W-Band InP Wideband MMIC LNA with 30K Noise Temperature

    NASA Technical Reports Server (NTRS)

    Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

    2000-01-01

    This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

  6. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Mannarino, Manuel; Chintala, Ravi; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof; Vandervorst, Wilfried

    2015-12-01

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  7. The INPE handouts to the 6th LANDSAT Technical Working Group (LTWG) Meeting

    NASA Technical Reports Server (NTRS)

    Debarrosaguirre, J. L. (Principal Investigator); Parada, L. E. M.; Depaulapereira, S.

    1984-01-01

    LANDSAT receiving and processing system in its present configuration and status are described, as well as the experience already obtained with LANDSATs 4 and 5. The revised table of station plans for TM reception and products and of implementation schedule for data formats employing superstructure conventions is updated. Standardization of the worldwide reference systems is proposed. The INPE preliminary TM products price list is included. A TM image received and processed is shown to illustrate the appearance of the products offered.

  8. Dopant Segregation in Earth- and Space-Grown InP Crystals

    NASA Astrophysics Data System (ADS)

    Danilewsky, Andreas Nikolaus; Okamoto, Yusuke; Benz, Klaus Werner; Nishinaga, Tatau

    1992-07-01

    Macro- and microsegregation of sulphur in InP crystals grown from In solution by the travelling heater method under microgravity and normal gravity are analyzed using spatially resolved photoluminescence. Whereas the macrosegregation in earth- as well as space-grown crystals is explained by conventional steady-state models based on the theory of Burton, Prim and Slichter (BPS), the microsegregation can only be understood in terms of the non-steady-state step exchange model.

  9. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    SciTech Connect

    Mannarino, Manuel E-mail: manuelmannarino@gmail.com; Chintala, Ravi; Vandervorst, Wilfried; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof

    2015-12-14

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III–V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III–V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  10. Optical Excitation of Trapping States in Fe Doped InP.

    DTIC Science & Technology

    1983-06-20

    cross sections. The Deep Level Transient Spectroscopy (DLTS) technique that is useful for electrical pulsing, becomes increasingly profitable using...intensity. %- °-4 ,o . . . . . . . 4’ 44 us Id- I-- 4 4W w wi UU 0. Li 28 The Technique Section III-I The technique of capacitance transient spectroscopy ...change of bandgap with temperature of InP. If one compares that data to the spectra data of the high output infarred , LED, it appears as if they

  11. Improved nucleosome-positioning algorithm iNPS for accurate nucleosome positioning from sequencing data.

    PubMed

    Chen, Weizhong; Liu, Yi; Zhu, Shanshan; Green, Christopher D; Wei, Gang; Han, Jing-Dong Jackie

    2014-09-18

    Accurate determination of genome-wide nucleosome positioning can provide important insights into global gene regulation. Here, we describe the development of an improved nucleosome-positioning algorithm-iNPS-which achieves significantly better performance than the widely used NPS package. By determining nucleosome boundaries more precisely and merging or separating shoulder peaks based on local MNase-seq signals, iNPS can unambiguously detect 60% more nucleosomes. The detected nucleosomes display better nucleosome 'widths' and neighbouring centre-centre distance distributions, giving rise to sharper patterns and better phasing of average nucleosome profiles and higher consistency between independent data subsets. In addition to its unique advantage in classifying nucleosomes by shape to reveal their different biological properties, iNPS also achieves higher significance and lower false positive rates than previously published methods. The application of iNPS to T-cell activation data demonstrates a greater ability to facilitate detection of nucleosome repositioning, uncovering additional biological features underlying the activation process.

  12. Transfer of InP thin films from engineered porous silicon substrates

    NASA Astrophysics Data System (ADS)

    Joshi, Monali B.; Goorsky, Mark S.

    2010-01-01

    Engineered composite substrates for thin film layer transfer applications are fabricated by incorporating the techniques of anodic etching, wafer bonding, and hydrogen-induced exfoliation. Silicon substrates (p /p+) are subjected to anodic electrochemical etching in 25% HF electrolyte to create double layer (40%/60% porosity) structures, which provide the means for subsequent mechanical transfer. Indium phosphide (InP) layers are transferred to the porous Si/Si substrate via silicon nitride interlayer bonding and hydrogen exfoliation. After chemical mechanical polishing, the transferred InP layers have a surface roughness of 0.6 nm and high crystalline quality. Metal-organic chemical vapor deposition on the composite substrate shows that residual ion implantation defects present in the InP template layer do not extend into epilayers, and the substrate maintains its high crystalline quality and mechanical integrity. Transfer of the epitaxial layers from the porous silicon handle wafer to a secondary substrate was achieved via fracture along the double porous layer interface, with no impact on the epilayer strain.

  13. Overview of satellite data in CPTEC/INPE G3DVar system

    NASA Astrophysics Data System (ADS)

    Silveira, B. B.; Goncalves, L.

    2013-05-01

    In the past 2 years, CPTEC/INPE has been implementing and testing its new data assimilation scheme to run with its Atmospheric Global Circulation Model (AGCM) named G3DVar (Global 3DVar). This new tri-dimensional variational scheme is based in the Gridpoint Statistical Interpolation (GSI) system, currently used operationally at NCEP's GFS model. G3DVar is now up and running operationally with assimilation cycle at every 6 hours in the AGCM/CPTEC/INPE, that has 45 Km of horizontal resolution and 64 levels in the vertical, producing forecasts 4 times a day for up to 168 hours. Part of the implementation (and further operational mode) consists in monitoring and evaluating routinely direct radiance data assimilation in the system. This work will present the current status and configuration of the radiative transfer model (CRTM - Community Radiative Transfer Model), quality control and bias correction used in the AGCM/CPTEC/INPE. The current radiances options include sensors like: AMSU-A, MHS, HIRS-4, AIRS, and IASI, interfaced by NCEP BUFR data format. This work will show a review of the configuration options with respect to satellite radiances input and how selected simulated brightness temperature compare against observations. A case study will present preliminary analysis of fields for OMF (observation minus background forecast), OMA (observation minus analysis) and OMR (observation minus a model free run) to assess the current system performance against observations. Variations in skill and number of observations assimilated over different regions are also discussed.

  14. III-V Solar Cells Based on a Lattice Parameter near that of InP

    NASA Astrophysics Data System (ADS)

    O'Mahony, Donagh; Mathews, Ian; Gocalinska, Agnieszka; Pelucchi, Emanuele; Thomas, Kevin; Morrison, Alan P.; Corbett, Brian

    2014-08-01

    Multi-junction cells based on a lattice constant of 5.816 Å using InAlAs - InGaAsP - InGaAs alloys can theoretically outperform those based on the GaAs lattice parameter by 3%. This lattice constant is close to that of InP (5.86 Å) but ultimately requires growth on a lower cost substrate such as Ge or Si for cost effectiveness. This paper presents an overview of our group's progress on the development of the essential sub-elements of this novel configuration, namely: (i) single-junction In0.52Al0.48As and In0.53Ga0.47As solar cells lattice matched to InP substrates with measured 1-Sun PV efficiencies of 13.8% and 9.3% respectively, (ii) a compositionally-graded InxGa1-xAs/InP metamorphic buffer layer (MBL) that alters the lattice constant from 5.65 Å (GaAs) to 5.87 Å (InP) and (iii) the growth of In0.52Al0.48As and In0.53Ga0.47As single junction cells on GaAs substrates.

  15. Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

    NASA Astrophysics Data System (ADS)

    Sun, Yun; Liu, Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.

    2003-01-01

    The chemical cleaning of indium phosphide (InP),(100) surfaces is studied systematically by using photoemission electron spectroscopy. In order to achieve the necessary surface sensitivity and spectral resolution, synchrotron radiation with photon energies ranging from 60 to 600 eV are used to study the indium 4d, phosphorus 2p, carbon 1s, and oxygen 1s core levels, and the valence band. Typical H2SO4:H2O2:H2O solutions used to etch GaAs(100) surfaces are applied to InP(100) surfaces. It is found that the resulting surface species are significantly different from those found on GaAs(100) surfaces and that a second chemical cleaning step using a strong acid is required to remove residual surface oxide. This two-step cleaning process leaves the surface oxide free and with approximately 0.4 ML of elemental phosphorus, which is removed by vacuum annealing. The carbon coverage is also reduced dramatically from approximately 1 to about 0.05 ML. The chemical reactions are investigated, the resulting InP surface species at different cleaning stages are determined, and the optimum cleaning procedure is presented.

  16. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    NASA Astrophysics Data System (ADS)

    Steele, J. A.; Lewis, R. A.; Sirbu, L.; Enachi, M.; Tiginyanu, I. M.; Skuratov, V. A.

    2015-04-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index neff and compared to effective media approximations.

  17. Ab-initio Calculations of Electronic Properties of InP and GaP

    NASA Astrophysics Data System (ADS)

    Malozovsky, Yuriy; Franklin, Lashounda; Ekuma, Chinedu; Zhao, Guang-Lin; Bagayoko, Diola

    2013-03-01

    We present results from ab-initio, self consistent local density approximation (LDA) calculations of electronic and related properties of zinc blende indium and gallium phosphides (InP & GaP) We employed a local density approximation (LDA) potential and implemented the linear combination of atomic orbitals (LCAO) formalism. This implementation followed the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). This method searches for the optimal basis set that yields the minima of the occupied energies. This search entails methodically increasing the size of the basis set, up to the optimal one, and the accompanying enrichment of angular symmetry and of radial orbitals. Our calculated, direct band gap of 1.398 eV (1.40 eV) for InP, at the Γ point, is in excellent agreement with experimental values. We discuss our preliminary results for the indirect band gap, from Γ to X, of GaP. We also report calculated electron and hole effective masses for both InP and GaP and the total (DOS) and partial (pDOS) densities of states. This work was funded in part by the National Science Foundation and the Louisiana Board of Regents, through LASiGMA and LS-LAMP, [EPS-1003897, No. NSF (2010-15)-RII-SUBR, and HRD-1002541] and by the Louisiana Optical Network Initiative (LONI) at SUBR.

  18. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    SciTech Connect

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  19. The 2.5-12 micrometers spectrum of comet Halley from the IKS-VEGA experiment

    NASA Technical Reports Server (NTRS)

    Combes, M.; Moroz, V. I.; Crovisier, J.; Encrenaz, T.; Bibring, J. P.; Grigoriev, A. V.; Sanko, N. F.; Coron, N.; Crifo, J. F.; Gispert, R.; Bockelee-Morvan, D.; Krasnopolsky, V. A.; Owen, T.; Emerich, C.; Lamarre, J. M.; Rocard, F.

    1988-01-01

    The infrared instrument IKS flown on board the VEGA space probes was designed for the detection of emission bands of parent molecules, and for a measurement of the size and temperature of the thermal emitting nuclear region. The instrument had three channels with cooled detectors: an "imaging channel" designed to modulate the signal of the nucleus and two spectroscopic channels operating at 2.5-5 and 6-12 micrometers, respectively, equipped with circular variable filters of resolving power approximately 50. This paper presents and discusses the results from the spectral channels. On VEGA 1, usable spectra were obtained at distances D from the comet nucleus ranging from 250,000 to 40,000 km corresponding to fields of view 4000 and 700 km in diameter, respectively. The important internal background signal caused by the instrument itself, which could not be cooled, had to be eliminated. Since no sky chopping was performed, we obtain difference spectra between the current spectrum and a reference spectrum with little or no cometary signal taken at the beginning of the observing sequence (D approximately 200,000 km). Final discrimination between cometary signal and instrumental background is achieved using their different time evolution, since the instrumental background is proportional to the slow temperature drift of the instrument, and the cometary signal due to parent molecules or dust grains is expected to vary in first order as D-1. The 2.5-5 micrometers IKS spectra definitely show strong narrow signals at 2.7 and 4.25 micrometers, attributed to the nu 3 vibrational bands of H2O and CO2, respectively, and a broader signal in the region 3.2-3.5 micrometers, which may be attributed to CH-bearing molecules. All these signals present the expected D-1 intensity variation. Weaker emission features at 3.6 and 4.7 micrometers could correspond to the nu 1 and nu 5 bands of H2CO and the (1 - 0) band of CO, respectively. Molecular production rates are derived from the

  20. Observational constraints on the atmospheres of Uranus and Neptune from new measurements near 10 micrometers

    SciTech Connect

    Tokunaga, A.T.; Caldwell, J.

    1983-10-01

    Uranus was detected at 10.3, 11.6 and 12.5 micrometers approximately 1 micrometer spectral bandpasses, with respective brightness temperatures of 74.0 + 0.9 or -1.1, 67.6 + 0.5 or -0.7, and 65.5 + 0.6 or -0.7 K and the first detection of Neptune at 10.3 micrometers with a brightness temperature of 77.5 + 0.7 or -0.9 K. We also detected Neptune at 11.36 micrometers with 2 percent spectral resolution at 81.0 + 0.8 or -0.9 K. The 10 micrometers continuous of both Uranus and Neptune may in part be due to reflected solar radiation as well as thermal emission. If all of the observed flux is reflected light, then the maximum geometric albedo of Uranus is 0.115 + or - 0.020, and that of Neptune is 0.229 + or - 0.043. In the context of previous observations in this region, the maximum stratospheric C2H6 mixing ratio is found to be 3 x 10 to the -8 power for Uranus and 3 x 10 to the -6 power for Neptune. A value for the maximum mixing ratio in the stratosphere of Neptune on the order of 1 - 0.004 appears to be consistent with the available data. Previously announced in STAR as N83-29155.

  1. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

    SciTech Connect

    Kamarou, A.; Wesch, W.; Wendler, E.; Undisz, A.; Rettenmayr, M.

    2006-05-01

    Irradiation of single-crystalline InP with swift heavy ions (SHI's) causes the formation of ion tracks for certain irradiation temperatures if the electronic energy deposition exceeds a threshold value. With increasing SHI fluence, more and more ion tracks are formed, until a continuous amorphous layer is produced due to the multiple overlapping of the tracks at high ion fluences. Single-crystalline InP samples were irradiated either at liquid nitrogen temperature (LNT) or at room temperature (RT) with Kr, Xe, or Au ions with specific energies ranging from ca. 0.3 to 3.0 MeV/u. Afterwards, the samples were investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy in the plan-view and cross-section geometry. We show that the experimental data obtained can be qualitatively and quantitatively described on the basis of the inelastic thermal spike (TS) model, which was originally used only for metallic targets. The presented extension of the TS model on semiconductors covers mainly the very first stage of the energy transfer from SHI's (so-called 'ionization spikes'). Our results show that the extended TS model offers a self-consistent way to explain the influence of various irradiation conditions (ion mass, ion energy, irradiation temperature, etc.) on the ion track formation and damage accumulation in InP and, therefore, can make a contribution to a better understanding of the underlying mechanisms. Further, our results prejudice the amenity of a single value of the threshold electronic energy loss as a fundamental quantity that is commonly used for the description of track formation in solids irradiated with different ion species. There is no universal RT threshold for track formation in InP, but it is noticeably higher for lighter ions (12.0 and 14.8 keV/nm for RT irradiations with Au and Xe, respectively). Our experimental and simulation results support the idea that the formation of visible tracks requires a predamaging

  2. Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

    NASA Astrophysics Data System (ADS)

    Kamarou, A.; Wesch, W.; Wendler, E.; Undisz, A.; Rettenmayr, M.

    2006-05-01

    Irradiation of single-crystalline InP with swift heavy ions (SHI’s) causes the formation of ion tracks for certain irradiation temperatures if the electronic energy deposition exceeds a threshold value. With increasing SHI fluence, more and more ion tracks are formed, until a continuous amorphous layer is produced due to the multiple overlapping of the tracks at high ion fluences. Single-crystalline InP samples were irradiated either at liquid nitrogen temperature (LNT) or at room temperature (RT) with Kr, Xe, or Au ions with specific energies ranging from ca. 0.3to3.0MeV/u . Afterwards, the samples were investigated by means of Rutherford backscattering spectrometry and transmission electron microscopy in the plan-view and cross-section geometry. We show that the experimental data obtained can be qualitatively and quantitatively described on the basis of the inelastic thermal spike (TS) model, which was originally used only for metallic targets. The presented extension of the TS model on semiconductors covers mainly the very first stage of the energy transfer from SHI’s (so-called “ionization spikes”). Our results show that the extended TS model offers a self-consistent way to explain the influence of various irradiation conditions (ion mass, ion energy, irradiation temperature, etc.) on the ion track formation and damage accumulation in InP and, therefore, can make a contribution to a better understanding of the underlying mechanisms. Further, our results prejudice the amenity of a single value of the threshold electronic energy loss as a fundamental quantity that is commonly used for the description of track formation in solids irradiated with different ion species. There is no universal RT threshold for track formation in InP, but it is noticeably higher for lighter ions (12.0 and 14.8keV/nm for RT irradiations with Au and Xe, respectively). Our experimental and simulation results support the idea that the formation of visible tracks requires a

  3. InP tunnel junction for InGaAs/InP tandem solar cells

    NASA Technical Reports Server (NTRS)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  4. The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program

    NASA Astrophysics Data System (ADS)

    Schuch, Nelson Jorge; Cupertino Durao, Otavio S.

    The Brazilian INPE-UFSM NANOSATC-BR CubeSat Development Capacity Building Program (CBP) and the results of the NANOSATC-BR1, the first Brazilian CubeSat launching, expected for 2014's first semester, are presented. The CBP consists of two CubeSats, NANOSATC-BR 1 (1U) & 2 (2U) and is expected operate in orbit for at least 12 months each, with capacity building in space science, engineering and computer sciences for the development of space technologies using CubeSats satellites. The INPE-UFSM’s CBP Cooperation is basically among: (i) the Southern Regional Space Research Center (CRS), from the Brazilian INPE/MCTI, where acts the Program's General Coordinator and Projects NANOSATC-BR 1 & 2 Manager, having technical collaboration and management of the Mission’s General Coordinator for Engineering and Space Technology at INPE’s Headquarter (HQ), in São José dos Campos, São Paulo; (ii) the Santa Maria Space Science Laboratory (LACESM/CT) from the Federal University of Santa Maria - (UFSM); (iii) the Santa Maria Design House (SMDH); (iv) the Graduate Program in Microelectronics from the Federal University of Rio Grande do Sul (MG/II/UFRGS); and (v) the Aeronautic Institute of Technology (ITA/DCTA/CA-MD). The INPE-UFSM’s CBP has the involvement of UFSM' undergraduate students and graduate students from: INPE/MCTI, MG/II/UFRGS and ITA/DCTA/CA-MD. The NANOSATC-BR 1 & 2 Projects Ground Stations (GS) capacity building operation with VHF/UHF band and S-band antennas, are described in two specific papers at this COSPAR-2014. This paper focuses on the development of NANOSATC-BR 1 & 2 and on the launching of NANOSATC-BR1. The Projects' concepts were developed to: i) monitor, in real time, the Geospace, the Ionosphere, the energetic particle precipitation and the disturbances at the Earth's Magnetosphere over the Brazilian Territory, and ii) the determination of their effects on regions such as the South American Magnetic Anomaly (SAMA) and the Brazilian sector of the

  5. PULSE SYNTHESIZING GENERATOR

    DOEpatents

    Kerns, Q.A.

    1963-08-01

    >An electronlc circuit for synthesizing electrical current pulses having very fast rise times includes several sinewave generators tuned to progressively higher harmonic frequencies with signal amplitudes and phases selectable according to the Fourier series of the waveform that is to be synthesized. Phase control is provided by periodically triggering the generators at precisely controlled times. The outputs of the generators are combined in a coaxial transmission line. Any frequency-dependent delays that occur in the transmission line can be readily compensated for so that the desired signal wave shape is obtained at the output of the line. (AEC)

  6. On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography.

    PubMed

    Gregusová, D; Martaus, J; Fedor, J; Kúdela, R; Kostic, I; Cambel, V

    2009-07-01

    We developed a technology of sub-micrometer Hall probes for future application in scanning hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes of approximately 9-mum dimensions are prepared on the top of high-aspect-ratio GaAs pyramids with an InGaP/AlGaAs/GaAs active layer using wet-chemical etching and non-planar lithography. Then we show that the active area of planar Hall probes can be downsized to sub-micrometer dimensions by local anodic oxidation technique using an atomic force microscope. Such planar probes are tested and their noise and magnetic field sensitivity are evaluated. Finally, the two technologies are combined to fabricate sub-micrometer Hall probes on the top of high-aspect ratio mesa for future SHPM and MFM techniques.

  7. The Journal Synthesizing Activity.

    ERIC Educational Resources Information Center

    Garber, Zev

    The journal synthesizing activity is intended to combine aspects of the formal essay with that of a diary. Activities associated with lecture topics are written up as short journal entries of approximately five typewritten pages and are turned in during the weekly class session at which the related topic is being discussed. The journal project…

  8. Wisdom, Intelligence & Creativity Synthesized

    ERIC Educational Resources Information Center

    Sternberg, Robert J.

    2009-01-01

    How is it that smart administrators who want to do a good job often find themselves in situations that degenerate into confrontation and, ultimately, termination? In this article, the author discusses why in terms of a model of leadership--which he refers to it as WICS, an acronym for wisdom, intelligence and creativity synthesized. He describes…

  9. Synthesized night vision goggle

    NASA Astrophysics Data System (ADS)

    Zhou, Haixian

    2000-06-01

    A Synthesized Night Vision Goggle that will be described int his paper is a new type of night vision goggle with multiple functions. It consists of three parts: main observing system, picture--superimposed system (or Cathode Ray Tube system) and Charge-Coupled Device system.

  10. The Herschel ATLAS: Evolution of the 250 Micrometer Luminosity Function Out to z = 0.5

    NASA Technical Reports Server (NTRS)

    Dye, S.; Dunne, L.; Eales, S.; Smith, D. J. B.; Amblard, A.; Auld, R.; Baes, M.; Baldry, I. K.; Bamford, S.; Blain, A. W.; Bonfield, D. G.; Bremer, M.; Burgarella, D.; Buttiglione, S.; Cameron, E.; Cava, A.; Clements, D. L.; Cooray, A.; Croom, S.; Dariush, A.; de Zotti, G.; Driver, S.; Dunlop, J. S.; Frayer, D.; Leeuw, L.

    2010-01-01

    We have determined the luminosity function of 250 micrometer-selected galaxies detected in the approximately equal to 14 deg(sup 2) science demonstration region of the Herschel-ATLAS project out to a redshift of z = 0.5. Our findings very clearly show that the luminosity function evolves steadily out to this redshift. By selecting a sub-group of sources within a fixed luminosity interval where incompleteness effects are minimal, we have measured a smooth increase in the comoving 250 micrometer luminosity density out to z = 0.2 where it is 3.6(sup +1.4) (sub -0.9) times higher than the local value.

  11. Hydrothermal synthesis of micrometer sized HgMoO4 flowers formed by nanorods

    NASA Astrophysics Data System (ADS)

    Jia, Run-Ping; Zhang, Ying-Qiang

    2010-10-01

    Micrometer sized HgMoO4 flowers formed by nanorods were prepared by a selected hydrothermal method using a mixture of ethanol and water as a reaction medium, which were characterized by scanning electron microscopy, X-ray diffractometer (XRD), FT-IR spectrometry, photoluminescence spectrometry, and UV-visible spectrometry. Results indicated that the micrometer sized flowers consisted of mercury molybdate nanorods, and the monoclinic wolframite-type structure of the flowers was confirmed by both XRD and FT-IR spectrometry. A blue shift of the photoluminescence peaks and a broadening of XRD peaks were observed, which increased with ethanol fraction in the reaction medium.

  12. Wideband 1.064 micrometer detector evaluation. [for application to space laser communication systems

    NASA Technical Reports Server (NTRS)

    Green, S. I.

    1977-01-01

    Several types of communications detectors for use in a 400 Mbps 1.064 micrometer laser communication system were evaluated and characterized. The communication system Bit Error Rate (BER) performance was measured, and test results for the best detector of each type are summarized. The complete BER curves are presented. The 400 Mbps 1.064 micrometer communication system receiver test bed is described. The best performance levels which can be achieved by focusing the signal to diffraction limited spots on the photosensitive area are cited.

  13. Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

    NASA Astrophysics Data System (ADS)

    Le Goff, Florian; Mathiot, Daniel; Decobert, Jean; Le Goec, Jean-Pierre; Parillaud, Olivier; Reverchon, Jean-Luc

    2016-09-01

    In order to develop III-V based devices integrated directly above post-processed silicon wafers, low temperature diffusion of zinc in n-type InP and InGaAs is studied at compatible temperatures, below 425 oC. We particularly focus on the resulting surface degradation. Efficient Zn diffusion is obtained for InGaAs samples, where the surface remains mirror-like after thermal treatment. Conversely, no significant diffusion occurs in InP where the surface is deeply deteriorated. The stability study for InP under thermal annealing in various ambients allows us to rule out thermal dephosphorization as the main cause of the surface degradation. On the basis of experimental observations and thermodynamic considerations, it is suggested that InP degradation is linked to the direct interaction of Zn and P, inducing the formation of parasitic Zn x P2 alloys, which also hinders the efficient diffusion of Zn into the InP substrate.

  14. Preparation of micrometer-sized polymer particles with control of initiator dissociation during soap-free emulsion polymerization.

    PubMed

    Nagao, Daisuke; Sakamoto, Tatsuro; Konno, Hiroyuki; Gu, Shunchao; Konno, Mikio

    2006-12-19

    A previously proposed method of soap-free emulsion polymerization employing an amphoteric initiator, 2,2'-azobis [N-(2-carboxyethyl)-2-methylpropionamidine] tetrahydrate (VA-057), was extended to synthesize micrometer-sized polystyrene particles with low polydispersity in an acidic region of pH from 3.3 to 4.6. A buffer system of CH3COOH/CH3COONa was used for the adjustment of pH, which was aimed at effective promotion of particle coagulation in early stage of the polymerization. In these experiments, CH3COOH concentration was varied from 20 to 360 mM at a CH3COONa concentration of 10 mM. Polymer particles with an average size of 1.8 microm and low polydispersity were obtained at the CH3COOH concentration of 40 mM for the concentrations of 1.1 M styrene monomer and 10 mM initiator. To more precisely control dispersion stability of particles, experiments in which pH was stepwisely changed during the polymerization were also carried out. This polymerization method could enhance the average size of particles to 2.2 microm while retaining the monodispersity of particles. Furthermore, combination of pH stepwise change and monomer addition during the polymerization could produce particles with an average size of 3.0 microm and low polydispersity.

  15. Nuclear Technology. Course 27: Metrology. Module 27-2, Fixed Gages, Dividers, Calipers, and Micrometers.

    ERIC Educational Resources Information Center

    Selleck, Ben; Espy, John

    This second in a series of eight modules for a course titled Metrology dscribes fixed gages, dividers, calipers, vernier and dial calipers, and micrometers. The module follows a typical format that includes the following sections: (l) introduction, (2) module prerequisites, (3) objectives, (4) notes to instructor/student, (5) subject matter, (6)…

  16. FIB-TEM Anatomy of a Sub-Micrometer Impact Crater on a Hayabusa Grain

    NASA Astrophysics Data System (ADS)

    Harries, D.; Yakame, S.; Uesugi, M.; Langenhorst, F.

    2015-07-01

    We investigated Hayabusa grain RA-QD02-0265, which was found to contain a cluster of sub-micrometer-sized crater-like features. The cluster of craters is most likely due to secondary impacts of particles generated by an nearby (micro-)impact event.

  17. Micrometer scale spacings between fibronectin nanodots regulate cell morphology and focal adhesions

    NASA Astrophysics Data System (ADS)

    Horzum, Utku; Ozdil, Berrin; Pesen-Okvur, Devrim

    2014-04-01

    Cell adhesion to extracellular matrix is an important process for both health and disease states. Surface protein patterns that are topographically flat, and do not introduce other chemical, topographical or rigidity related functionality and, more importantly, that mimic the organization of the in vivo extracellular matrix are desired. Previous work showed that vinculin and cytoskeletal organization are modulated by size and shape of surface nanopatterns. However, quantitative analysis on cell morphology and focal adhesions as a function of micrometer scale spacings of FN nanopatterns was absent. Here, electron beam lithography was used to pattern fibronectin nanodots with micrometer scale spacings on a K-casein background on indium tin oxide coated glass which, unlike silicon, is transparent and thus suitable for many light microscopy techniques. Exposure times were significantly reduced using the line exposure mode with micrometer scale step sizes. Micrometer scale spacings of 2, 4 and 8 μm between fibronectin nanodots proved to modulate cell adhesion through modification of cell area, focal adhesion number, size and circularity. Overall, cell behavior was shown to shift at the apparent threshold of 4 μm spacing. The findings presented here offer exciting new opportunities for cell biology research.

  18. Efficient Single-Frequency Thulium Doped Fiber Laser Near 2-micrometers

    NASA Technical Reports Server (NTRS)

    Geng, Jihong; Wu, Jianfeng; Jiang, Shibin; Yu, Jirong

    2007-01-01

    We demonstrate highly efficient diode-pumped single-frequency fiber laser with 35% slope efficiency and 50mW output power operating near 2 micrometers, which generated from a 2-cm long piece of highly Tm(3+)-doped germanate glass fiber pumped at 800nm.

  19. InP by Planar Reactive Deposition and GaAs by Low Pressure Metal Organic Chemical Vapor Deposition.

    DTIC Science & Technology

    1981-02-01

    This inter- pretation is consistent with the fact that In2S3 is quite stable,(L7,18) whereas Cd2P 3 is quite volatile. (19) InP did not form until the...hypothesis regarding InP grain boundary passivation. Besides InP and CdS, the compounds Cd 2P3 , CdIn 2 S4 (Ref. 20) and (CdS)3x - ( In2S3 ).x (Ref. 18...PROCESSING: 2HRSAT425 C CdS +,(BARS) 1 GLASS SIDE VIEW I n (S)~,I (DOTS)~ (BARS) In2S3 (DOTS) (Cd) Figure 6. Scanning electron microscope (left) and

  20. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    DOE PAGES

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

    2014-09-25

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%.

  1. Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface

    NASA Astrophysics Data System (ADS)

    Woo, R. L.; Das, U.; Cheng, S. F.; Chen, G.; Raghavachari, K.; Hicks, R. F.

    2006-11-01

    Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface at 25 °C have been studied by internal reflection infrared spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. Both molecules form a dative bond to the empty dangling bonds on the In-P heterodimers and the second-layer In-In dimers and vibrate symmetrically at 2319 (2315) and 2285 (2281) cm -1 and asymmetrically at 2339 (2339) and 2327 (2323) cm -1. A fraction of these species dissociate into adsorbed PH 2 with the hydrogen and tertiarybutyl ligands transferring to nearby phosphorus sites. The calculated energy barriers for desorption (<11 kcal/mol) of these molecules is less than that for dissociation (>17 kcal/mol) and explains their low sticking probabilities at elevated temperatures under InP growth conditions.

  2. The Dependence of the Oxidation Enhancement of InP(100) Surface on the Coverage of the Adsorbed Cs

    SciTech Connect

    Sun, Yun

    2010-06-07

    We report the oxidation of the InP(100) surface promoted by adsorbed Cs by synchrotron radiation photoemission. Oxygen exposure causes reduction of the charge transferred to the InP substrate from Cs and the growth of indium oxide and phosphorous oxide. The oxide growth displays a clear dependence on the Cs coverage. The oxidation of phosphorous is negligible up to 1000 L of O{sub 2} exposure when the Cs coverage is less than half a monolayer (ML), but the formation of the second half monolayer of Cs greatly accelerates the oxidation. This different enhancement of the InP oxidation by the first and the second half monolayer of Cs is due to the double layer structure of the adsorbed Cs atoms, and consequently the higher 6s electron density in the Cs atoms when Cs coverage is larger than 0.5 ML.

  3. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    PubMed Central

    2015-01-01

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

  4. Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

    NASA Astrophysics Data System (ADS)

    Mavel, Amaury; Chauvin, Nicolas; Regreny, Philippe; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel

    2017-01-01

    The nucleation and the structural and optical properties of InP nanowires (NWs) grown on Si(111) by molecular beam epitaxy using the vapor-liquid-solid method with gold-indium droplets as catalyst are investigated as a function of the temperature of the formation of the catalyst droplets and of the NW growth time. It is highlighted a complex behavior of the gold-indium catalyst droplets depending on the temperature. It is then shown than an InP pyramid-like pedestal is formed prior to the NW growth. When the temperature of formation of the catalyst droplets is lower than 550 °C, almost only vertically standing pure wurtzite InP NWs are grown on Si(111).

  5. Status of diffused junction p+n InP solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

    1994-01-01

    Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

  6. Synthesis and properties of ultra-long InP nanowires on glass.

    PubMed

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-16

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min(-1), were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  7. Progress in p(+)n InP solar cells fabricated by thermal diffusion

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.; Weinberg, I.; Vargas, C.; Faur, Mircea; Faur, Maria; Goradia, C.; Goradia, M.; Fatemi, N. S.

    1993-01-01

    The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.

  8. Synthesis and properties of ultra-long InP nanowires on glass

    NASA Astrophysics Data System (ADS)

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-01

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ˜250 μm) InP NWs, with an exceptionally high growth rate of ˜25 μm min-1, were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  9. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  10. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  11. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOEpatents

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  12. InP photonic integrated externally injected gain switched optical frequency comb.

    PubMed

    Gutierrez Pascual, M Deseada; Vujicic, Vidak; Braddell, Jules; Smyth, Frank; Anandarajah, Prince M; Barry, Liam P

    2017-02-01

    We report on an InP photonic integrated circuit for the generation of an externally injected gain switched optical frequency comb. The device is fully characterized and generates a comb with frequency spacing ranging from 6 to 10 GHz, good noise properties that include relative intensity noise of <-130  dB/Hz and linewidth of 1.5 MHz, and a high phase correlation between comb lines. These characteristics, in conjunction with the compactness and cost efficiency of the integrated device, demonstrate the quality of the resultant comb source for numerous applications.

  13. Shallow donor-like impurity states in magnetic field in n-type InP

    NASA Astrophysics Data System (ADS)

    Aulombard, R. L.; Kadri, A.; Zitouni, K.; Konczewicz, L.

    1987-02-01

    We present the evidence of hydrogenic behavior of shallow donor-like impurity states in n-type InP (8.5 × 10 15 cm -3 ≲ N d-N a ≲ 6.2 × 10 16 cm -3) from magnetic freeze out experiments at magnetic fields up to 18 T. This occurs at T ≳ 10 K and at a magnetic field sufficiently high to induce a metal-insulator transition. At high fields, the reduction of the binding energy with respect to the hydrogenic model of LARSEN can be well accounted for by the increasing overlap of the impurity wave functions as the donor concentration increases.

  14. A new high efficiency InP acousto-optic device for IR wavelengths

    NASA Astrophysics Data System (ADS)

    Soos, Jolanta I.; Rosemeier, Ronald G.; Rosenbaum, Joel

    1990-09-01

    InP acoustooptic Bragg cells which are IR-transparent in the 1-10 micron bandpass have a center frequency in the 200-600 MHz range, and a diffraction efficiency of 40-60 percent, on the basis of 1-W RF driving power. These devices are anticipated to be ideal in such applications as fiber-optic modulators, IR scanners, deflectors, and HF mode-lockers. In the course of fabrication, the photoelastic constant p44 has been defined; using other crystallographic configurations, such photoelastic constants as p11 and p12 are expected to emerge.

  15. Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Shamir, N.; Ritter, D.; Cytermann, C.

    2002-06-01

    A tunnel diode collector contact to InP based PNP heterojunction bipolar transistors (HBTs) is suggested and demonstrated. The additional heavily doped n-type contact layer replaces the thick p-type contact layer required in conventional structures. The thermal and electrical properties of the collector contact layer thus become similar to those of NPN HBTs. A secondary ion mass spectroscopy study explores the maximum tin doping level that can be obtained in the base. Finally, the temperature dependence of the current gain is presented and interpreted.

  16. Solar cells in bulk InP using an open tube diffusion process

    NASA Technical Reports Server (NTRS)

    Parat, K. K.; Bothra, S.; Borrego, J. M.; Ghandhi, S. K.

    1987-01-01

    A simple open tube diffusion technique for the fabrication of n+p junction solar cells is described. Large area (greater than 0.25 square cm) solar cells have been made by this process with a photovoltaic conversion efficiency of 15.2 percent under simulated AMO illumination. An ideality factor is 1.04 and a saturation current density of 9.6 times 10 to the minus 16th power A/square cm have been observed for these cells. These are the lowest (best) values reported to date for diffused structures in bulk InP.

  17. Integrated amplifiers using fully ion-implanted InP JFET's with high transconductance

    NASA Astrophysics Data System (ADS)

    Kim, Sung J.; Guth, G.; Vella-Coleiro, G. P.

    1988-06-01

    Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 microns and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.

  18. Reflectance reduction of InP wafers after high-temperature annealing.

    PubMed

    Semyonov, Oleg G; Subashiev, Arsen V; Shabalov, Alexander; Lifshitz, Nadia; Chen, Zhichao; Hosoda, Takashi; Luryi, Serge

    2012-08-01

    Broadband reduction of light reflection from the surface of InP wafers after high-temperature annealing in air has been observed. In the transparency region of the material, the reflection drop is accompanied by increasing transmission of light through the wafer. The spectral position of a deep minimum of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in a wide spectral range from ultraviolet to infrared. The effect is due to formation of thermal oxide layers on the surfaces of the wafer with optical parameters favorable for antireflection.

  19. Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

    PubMed Central

    2011-01-01

    Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content. PMID:21711912

  20. Study of CdS epitaxial films chemically deposited from aqueous solutions on InP single crystals

    SciTech Connect

    Froment, M.; Bernard, M.C.; Cortes, R.; Mokili, B.; Lincot, D.

    1995-08-01

    Epitaxial growth of cadmium sulfide on InP single crystals is achieved by chemical bath deposition (CBD) in ammonia solutions at near room temperature. A better understanding of the correlations between the deposition parameters (temperature, bath composition) and the epitaxial quality is obtained by using electron diffraction and transmission techniques, x-ray diffraction, in combination with Raman spectroscopy. They are supplemented by electrochemical impedance and photocurrent experiments which give information on energetic structures between InP and CBD-CdS. Direct relations between the substrate properties and the growth habits of the CdS film (hexagonal vs. cubic, epitaxial vs. polycrystalline) are found.

  1. Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    NASA Astrophysics Data System (ADS)

    Yanase, Shougo; Sasakura, Hirotaka; Hara, Shinjiro; Motohisa, Junichi

    2017-04-01

    We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. InAsP quantum dots were embedded in these density-controlled InP NW arrays, and clear single-photon emission and exciton-biexciton cascaded emission were confirmed by excitation-dependent photoluminescence and photon correlation measurements.

  2. Concepts for connectivity and interoperability of world space data networks: INPE proposal to CCSDS/Panel 3

    NASA Astrophysics Data System (ADS)

    Bergamini, E. W.

    1983-05-01

    Concepts are presented for an architectural end-to-end reference model based on the identification of classes of applications and products to be offered by services required to exchange data in operational support of space data systems. An Internetwork Transfer Frame (ITF) structure and basic concepts of a protocol are proposed for operational interconnection of data networks. The upward compatibility of these concepts with the higher layers of a standard data interchange structure (SDIS) model is also considered, based on INPE proposal to CCSDS/PANEL 2. Implementation aspects of the proposed model are also presented with respect to INPE's network.

  3. Explaining Synthesized Software

    NASA Technical Reports Server (NTRS)

    VanBaalen, Jeffrey; Robinson, Peter; Lowry, Michael; Pressburger, Thomas; Lau, Sonie (Technical Monitor)

    1998-01-01

    Motivated by NASA's need for high-assurance software, NASA Ames' Amphion project has developed a generic program generation system based on deductive synthesis. Amphion has a number of advantages, such as the ability to develop a new synthesis system simply by writing a declarative domain theory. However, as a practical matter, the validation of the domain theory for such a system is problematic because the link between generated programs and the domain theory is complex. As a result, when generated programs do not behave as expected, it is difficult to isolate the cause, whether it be an incorrect problem specification or an error in the domain theory. This paper describes a tool we are developing that provides formal traceability between specifications and generated code for deductive synthesis systems. It is based on extensive instrumentation of the refutation-based theorem prover used to synthesize programs. It takes augmented proof structures and abstracts them to provide explanations of the relation between a specification, a domain theory, and synthesized code. In generating these explanations, the tool exploits the structure of Amphion domain theories, so the end user is not confronted with the intricacies of raw proof traces. This tool is crucial for the validation of domain theories as well as being important in everyday use of the code synthesis system. It plays an important role in validation because when generated programs exhibit incorrect behavior, it provides the links that can be traced to identify errors in specifications or domain theory. It plays an important role in the everyday use of the synthesis system by explaining to users what parts of a specification or of the domain theory contribute to what pieces of a generated program. Comments are inserted into the synthesized code that document these explanations.

  4. SYNTH: A spectrum synthesizer

    NASA Astrophysics Data System (ADS)

    Hensley, W. K.; McKinnon, A. D.; Miley, H. S.; Panisko, M. E.; Savard, R. M.

    1993-10-01

    A computer code has been written at the Pacific Northwest Laboratory (PNL) to synthesize the results of typical gamma ray spectroscopy experiments. The code, dubbed SYNTH, allows a user to specify physical characteristics of a gamma ray source, the quantity of the nuclides producing the radiation, the source-to-detector distance and the presence of absorbers, the type and size of the detector, and the electronic set up used to gather the data. In the process of specifying the parameters needed to synthesize a spectrum, several interesting intermediate results are produced, including a photopeak transmission function versus energy, a detector efficiency curve, and a weighted list of gamma and x rays produced from a set of nuclides. All of these intermediate results are available for graphical inspection and for printing. SYNTH runs on personal computers. It is menu driven and can be customized to user specifications. SYNTH contains robust support for coaxial germanium detectors and some support for sodium iodide detectors. SYNTH is not a finished product. A number of additional developments are planned. However, the existing code has been compared carefully to spectra obtained from National Institute for Standards and Technology (NIST) certified standards with very favorable results. Examples of the use of SYNTH and several spectral results are presented.

  5. Programmable electronic synthesized capacitance

    NASA Technical Reports Server (NTRS)

    Kleinberg, Leonard L. (Inventor)

    1987-01-01

    A predetermined and variable synthesized capacitance which may be incorporated into the resonant portion of an electronic oscillator for the purpose of tuning the oscillator comprises a programmable operational amplifier circuit. The operational amplifier circuit has its output connected to its inverting input, in a follower configuration, by a network which is low impedance at the operational frequency of the circuit. The output of the operational amplifier is also connected to the noninverting input by a capacitor. The noninverting input appears as a synthesized capacitance which may be varied with a variation in gain-bandwidth product of the operational amplifier circuit. The gain-bandwidth product may, in turn, be varied with a variation in input set current with a digital to analog converter whose output is varied with a command word. The output impedance of the circuit may also be varied by the output set current. This circuit may provide very small ranges in oscillator frequency with relatively large control voltages unaffected by noise.

  6. Transport Properties of Thin Bismuth Films on InP (110) Surfaces by Scanning Tunneling Potentiometry

    NASA Astrophysics Data System (ADS)

    Feenstra, R. M.; Briner, B. G.; Chin, T. P.; Woodall, J. M.

    1996-03-01

    Charge transport in 20--30 Å thick Bi-films is studied by scanning tunneling potentiometry (STP) at room temperature. The Bi is deposited on cleaved InP(110) surfaces at temperatures near 140 K, yielding atomically flat films interspersed with 12 Å deep holes. The InP substrates contain conducting/insulating/conducting layers, which in cross-section are used to form contacts to the film, thus enabling lateral current densities as high as 8 × 10^6 A/cm^2 . Potential variations due to scattering of this lateral current is detected using STP, by locating the zero-crossing of current-voltage characteristics at each pixel in an image. Potential images reveal, on a coarse scale, a smooth ramp arising from the electric field due to phonon scattering in the film, from which an electron-phonon scattering length of >1000 Å is deduced. On a finer scale, potential steps 2--10 mV high are seen near surface holes and grain boundaries in the film. Detailed study of the ballistic scattering near the holes reveals a dipole shaped feature, which is identified as a residual resistivity dipole. *present address: Physics, Carnegie Mellon Univ., Pittsburgh PA 15213 **now at: Fritz-Haber-Institut, 14195 Berlin, briner@fhi-berlin.mpg.de

  7. Topographical and electrical study of contact and intermittent contact mode InP AFM lithography

    NASA Astrophysics Data System (ADS)

    Tranvouez, E.; Budau, P.; Bremond, G.

    2006-01-01

    In order to fabricate nanoscale oxide patterns on an InP(001) surface, local anodization by atomic force microscopy (AFM) contact and intermittent contact modes has been performed. Contact mode results are similar to those obtained with the local anodization of silicon, and mainly limited by the effect of space charge that occurs during the oxide growth. The existence of this space charge associated with the poor dielectric quality of the obtained oxide has been verified by performing scanning capacitance microscopy (SCM) measurements. Results for oxidation using intermittent AFM contact mode associated with a modulated voltage are more specific. For a more than two decade variation of probe velocity (0.01-5 µm s-1), the AFM oxidation introduces no significant changes in the oxide pattern. Experiments on the influence of oxidation time give rise to two regimes. First, for times shorter than 100 ms, a high growth rate is found. Second, for oxidation times longer than 100 ms, we observe an oxide height saturation and a significant decrease of lateral growth rate. These results provide a way to easily control the oxide shape. The space charge neutralization in this mode has also been investigated by SCM. The interesting results for intermittent contact oxidation confirm the capability of this technique to modify a nanoscale InP surface.

  8. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    SciTech Connect

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

    2010-09-06

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of {eta}{sub p}=14.4{+-}0.4% and {eta}{sub p}=14.8{+-}0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  9. Growth of SiO 2 on InP substrate by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lei, Po Hsun; Yang, Chyi Da

    2010-04-01

    We have grown silicon dioxide (SiO 2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO 2 saturated hydrofluorosilicic acid (H 2SiF 6), 0.1 M boric acid (H 3BO 3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO 2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO 2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H 2O 2) that can regulate the concentration of OH - ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO 2 saturated H 2SiF 6 in treatment solution.

  10. The effect of process conditions on the performance of epitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandi, S. K.

    1991-01-01

    Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.

  11. Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

    NASA Technical Reports Server (NTRS)

    Bhusal, L.; Freundlich, A.

    2007-01-01

    Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

  12. Growth and characterization of epitaxial SrF2 on InP(100)

    NASA Technical Reports Server (NTRS)

    Sinharoy, S.; Hoffman, R. A.; Rieger, J. H.; Warner, J. D.; Bhasin, K. B.

    1986-01-01

    The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.

  13. Annealing of irradiated n+p InP buried homojunctions

    NASA Technical Reports Server (NTRS)

    Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

    1994-01-01

    At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

  14. Interaction of atomic hydrogen with native oxides on InP(100)

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Houzay, F.; Moison, J. M.

    1992-05-01

    The (100) surface of InP covered with its native oxides has been exposed to increasing doses of atomic hydrogen and studied by surface-sensitive techniques. Carbon and oxygen coverages which cannot be desorbed by thermal cleaning can be completely removed at 300°C under atomic hydrogen. At this temperature, exposures to atomic hydrogen between 104 and 105 L of H2 remove the weakly bonded oxygen and carbon atoms. Exposures above 106 L lead to a surface-decomposition of InP evidenced by the decrease of the P2p/In4d intensity ration and the appearance of metallic indium. At room temperature, exposures to atomic hydrogen between 104 and 105 L desorb CO molecules and modify the nature of the native oxides. At higher exposures and up to 107 L of H2, the remaining oxide passivates the surface against the action of atomic hydrogen. These new results are discussed in relation with the cleaning action of hydrides on III-V compound surfaces.

  15. Shallow n(+) diffusion into InP by an open-tube diffusion technique

    NASA Technical Reports Server (NTRS)

    Ghandhi, Sorab K.; Parat, Krishna K.

    1987-01-01

    Very shallow n(+) layers have been obtained in InP by using gallium sulfide as a source for sulfur diffusion, and chemically vapor-deposited SiO2 as a cap. Diffusions were carried out from 585 to 725 C in an open-tube system with a nitrogen ambient. The doping profile of sulfur in InP is estimated to be of the complementary error function type with a surface concentration of 5.6 x 10 to the 18th/cc and a diffusion constant of 1.1 x 10 to the -14th sq cm/s at 670 C. Diodes made on n(+)-p junctions obtained by this diffusion technique show ideality factors close to unity and saturation current densities as low as 3.4 x 10 to the -15th A/sq cm, signifying the presence of a defect-free junction. These diffusions, with junction depths in the 400-700 A range, are ideal for solar cell applications.

  16. Scalar and anisotropic J interactions in undoped InP: A triple-resonance NMR study

    NASA Astrophysics Data System (ADS)

    Tomaselli, Marco; Degraw, David; Yarger, Jeffery L.; Augustine, Matthew P.; Pines, Alexander

    1998-10-01

    The heteronuclear J-coupling tensor between nearest neighbor 31P and 113In spins in undoped InP is investigated by means of 113In-->31P polarization transfer under rapid magic angle spinning (MAS). The scalar contribution can be measured directly and is found to have the value \\|Jiso(31P-113,115In)\\|=(225+/-10) Hz. The principal value of the traceless anisotropic J-coupling tensor (pseudodipolar coupling) is determined to be Janiso(31P-113,115In)=2/3[J||(31P-113,115In)-J⊥(31P-113,115In)]=(813+/-50) or (1733+/-50) Hz, assuming axial symmetry with the principal axis parallel to the In-P bond. Our values deviate from those reported previously [M. Engelsberg and R. E. Norberg, Phys. Rev. B 5, 3395 (1972)] [based on a moment analysis of the 31P resonance \\|Jiso(31P-113,115In)\\|=350 Hz and Janiso(31P-113,115In)=1273 Hz], but confirm the postulate that the nearest neighbor 31P-113,115In magnetic dipolar and pseudodipolar interactions are of the same order of magnitude and partially cancel each other.

  17. Colloidal Synthesis of Quantum Confined Single Crystal CsPbBr3 Nanosheets with Lateral Size Control up to the Micrometer Range.

    PubMed

    Shamsi, Javad; Dang, Zhiya; Bianchini, Paolo; Canale, Claudio; Stasio, Francesco Di; Brescia, Rosaria; Prato, Mirko; Manna, Liberato

    2016-06-15

    We report the nontemplated colloidal synthesis of single crystal CsPbBr3 perovskite nanosheets with lateral sizes up to a few micrometers and with thickness of just a few unit cells (i.e., below 5 nm), hence in the strong quantum confinement regime, by introducing short ligands (octanoic acid and octylamine) in the synthesis together with longer ones (oleic acid and oleylamine). The lateral size is tunable by varying the ratio of shorter ligands over longer ligands, while the thickness is mainly unaffected by this parameter and stays practically constant at 3 nm in all the syntheses conducted at short-to-long ligands volumetric ratio below 0.67. Beyond this ratio, control over the thickness is lost and a multimodal thickness distribution is observed.

  18. Colloidal Synthesis of Quantum Confined Single Crystal CsPbBr3 Nanosheets with Lateral Size Control up to the Micrometer Range

    PubMed Central

    2016-01-01

    We report the nontemplated colloidal synthesis of single crystal CsPbBr3 perovskite nanosheets with lateral sizes up to a few micrometers and with thickness of just a few unit cells (i.e., below 5 nm), hence in the strong quantum confinement regime, by introducing short ligands (octanoic acid and octylamine) in the synthesis together with longer ones (oleic acid and oleylamine). The lateral size is tunable by varying the ratio of shorter ligands over longer ligands, while the thickness is mainly unaffected by this parameter and stays practically constant at 3 nm in all the syntheses conducted at short-to-long ligands volumetric ratio below 0.67. Beyond this ratio, control over the thickness is lost and a multimodal thickness distribution is observed. PMID:27228475

  19. Method for synthesizing HMX

    DOEpatents

    McGuire, Raymond R.; Coon, Clifford L.; Harrar, Jackson E.; Pearson, Richard K.

    1984-01-01

    A method and apparatus for electrochemically synthesizing N.sub.2 O.sub.5 cludes oxidizing a solution of N.sub.2 O.sub.4 /HNO.sub.3 at an anode, while maintaining a controlled potential between the N.sub.2 O.sub.4 /HNO.sub.3 solution and the anode. A potential of about 1.35 to 2.0 V vs. SCE is preferred, while a potential of about 1.80 V vs. SCE is most preferred. Thereafter, the N.sub.2 O.sub.5 is reacted with either 1.5-diacetyl-3,7-dinitro-1,3,5,7-tetraazacyclooctane (DADN) or 1,3,5,7-tetraacetyl-1,3,5,7-tetraazacyclooctane (TAT) to form cyclotetramethylenetetraamine (HMX).

  20. Synthesized light transients.

    PubMed

    Wirth, A; Hassan, M Th; Grguras, I; Gagnon, J; Moulet, A; Luu, T T; Pabst, S; Santra, R; Alahmed, Z A; Azzeer, A M; Yakovlev, V S; Pervak, V; Krausz, F; Goulielmakis, E

    2011-10-14

    Manipulation of electron dynamics calls for electromagnetic forces that can be confined to and controlled over sub-femtosecond time intervals. Tailored transients of light fields can provide these forces. We report on the generation of subcycle field transients spanning the infrared, visible, and ultraviolet frequency regimes with a 1.5-octave three-channel optical field synthesizer and their attosecond sampling. To demonstrate applicability, we field-ionized krypton atoms within a single wave crest and launched a valence-shell electron wavepacket with a well-defined initial phase. Half-cycle field excitation and attosecond probing revealed fine details of atomic-scale electron motion, such as the instantaneous rate of tunneling, the initial charge distribution of a valence-shell wavepacket, the attosecond dynamic shift (instantaneous ac Stark shift) of its energy levels, and its few-femtosecond coherent oscillations.

  1. The spectral appearance of comets from 5 to 20 micrometers: A survey of the data

    NASA Technical Reports Server (NTRS)

    Bregman, Jesse D.

    1988-01-01

    Based on the concept of comets as being conglomerates of rocks and ices, it is expected that they reflect these components in their emission spectra. Silicate materials (rocks) are common in many astronomical environments and show prominent features at about 10 and 18 micrometers. Carbon should be abundant, but is much more difficult to detect spectroscopically since it has no strong features (except for the hydrogenated form). Ices are present in comets, but they are difficult to detect since they are volatile enough to dissipate when the comet is bright enough to be easily observed in the IR, with present equipment. There are other materials present in comets, but the ones listed above should be the most common and thus dominate the thermal IR spectrum. Most of the IR observations made on comets between 5 and 20 micrometers are summarized. They fall into three broad categories: (1) filter photometry; (2) circular variable filter wheel spectroscopy; and (3) spectra obtained with multidetector grating spectrometers.

  2. Novel magnetic Fe onion-like fullerene micrometer-sized particles of narrow size distribution

    NASA Astrophysics Data System (ADS)

    Snovski, Ron; Grinblat, Judith; Margel, Shlomo

    2012-01-01

    Magnetic polydivinylbenzene (PDVB)/magnetite micrometer-sized particles of narrow size distribution were prepared by entrapping Fe(CO)5 within the pores of uniform porous PDVB particles, followed by the thermal decomposition of the encapsulated Fe(CO)5 at 300 °C in a sealed cell under inert atmosphere. Magnetic Fe onion-like fullerene micrometer-sized particles of narrow size distribution have been prepared by the thermal decomposition of the PDVB/magnetite magnetic microspheres at 1100 °C under inert atmosphere. The graphitic coating protects the elemental iron particles from oxidation and thereby preserves their very high magnetic moment for at least a year. Characterization of these unique magnetic carbon graphitic particles was also performed.

  3. Impressive electromagnetic shielding effects exhibited by highly ordered, micrometer thick polyaniline films

    NASA Astrophysics Data System (ADS)

    Mohan, Ranjini R.; Varma, Sreekanth J.; Sankaran, Jayalekshmi

    2016-04-01

    The present work highlights the remarkably high shielding effectiveness of about 68 dB, exhibited by highly ordered and doped polyaniline films, in the microwave frequency range 4-12 GHz, obtained by self-stabilized dispersion polymerization as the synthesis route. The observed shielding effectiveness is found to depend quite sensitively on the electrical conducting properties, which are predominantly controlled by the nature and concentration of the dopants. The structural and morphological characterization of the films using XRD and TEM techniques reveals surprisingly high extent of crystallinity, which contributes significantly towards enhancing the electrical conductivity of the films. Most of the available reports on the microwave response of conducting polymer film samples deal with much thicker films, compared to the micrometer thick films of the present studies. The shielding effectiveness of acid doped, micrometer thick polyaniline films reported in the present work far exceeds most of the previously reported values and meets the commercial requirements.

  4. High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

    1997-01-01

    A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

  5. Jupiter's Cloud Distribution Between the Voyager 1 and 2 Encounters: Results from 5-Micrometer Imaging.

    PubMed

    Terrile, R J; Capps, R W; Becklin, E E; Cruikshank, D P

    1979-11-23

    As part of a continuing effort of ground-based support for Voyager target selection, infrared images in the 5-micrometer wavelength region were acquired in preparation for the Voyager 2 flyby of Jupiter. Observations were made during May 1979 from the Palomar 5-meter telescope and the new 3-meter NASA Infrared Telescope Facility at Mauna Kea and are compared to previous observations. Variations seen in the 5-micrometer flux distribution suggest global patterns of clouding over of some Jovian belts and clearing ofothers. These data were used to predict the Jovian cloud distribution at the time of the Voyager 2 encounter in order to target the imaging and infrared experiments to areas free of high obscuring clouds.

  6. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-12-07

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots.

  7. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

    NASA Astrophysics Data System (ADS)

    Azoulay, R.; Clei, A.; Dugrand, L.; Draïdia, auN.; Leroux, G.; Biblemont, S.

    1991-01-01

    The growth of GaAs on InP has attracted considerable interest recently because of the possibility of integration of GaAs electronic devices and 1.3 μm optical devices on the same wafer. In this work, we have investigated the growth of GaAs MESFETs and doped channel MIS-like FETs on InP by atmospheric pressure OMCVD. Because of the difference between the thermal expansion coefficient of GaAs and InP, the layers are under biaxial strain. The lowest FWHM of the (004) reflection curve of the double crystal X-ray diffraction spectra is 110 arc sec for a 12 μm thick layer. We have investigated the influence of the substrate temperature and of the arsine molar fraction on the residual carrier concentration of layers grown side by side on GaAs and on InP. The GaAs layers grown on InP are much more compensated than the layers grown on GaAs, indicating a higher incorporation of impurities. On MESFETs grown on InP, gm = 200mS/mm with Fmax higher than 30 GHz. On doped-channel MIS-like FETs on InP, we have measured gm = 145mS/mm.

  8. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Wang, W. I.

    2013-10-01

    GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

  9. Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy

    NASA Astrophysics Data System (ADS)

    Pluchery, O.; Chabal, Y. J.; Opila, R. L.

    2003-08-01

    Wet chemical cleaning is central to semiconductor device processing. For InP-based optoelectronic devices, controlling wet processing is challenging because of the high reactivity of InP surfaces in ambient air. In situ techniques are therefore critical to monitor and understand wet chemical etching and oxidation. We have combined in situ and ex situ Fourier transform infrared absorption spectroscopy, in direct transmission and multiple internal reflection configurations, with ex situ x-ray photoelectron spectroscopy to investigate the wet-chemical removal of "epi-ready" oxides on InP(100). Even dilute solutions of HCl, HF, or H2SO4 are found to completely remove the epi-ready oxides. For both HCl and HF, the InP surface is left unpassivated, exhibiting rapid recontamination and reoxidation upon air exposure. In contrast, H2SO4 aggressively etches the surface, and forms a thick and fragile oxide cap that can be washed away during a subsequent water rinse. This systematic in situ vibrational study of InP oxide chemistry provides a basis for a mechanistic understanding of wet chemical etching and oxidation.

  10. Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technology

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene; Paidi, V.; Griffith, Z.; Dahlstrom, M.; Wei, Y.; Urteaga, M.; Rodell, M. J. W.; Fung, A.

    2004-01-01

    We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.

  11. 1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC).

    PubMed

    Evans, P; Fisher, M; Malendevich, R; James, A; Goldfarb, G; Vallaitis, T; Kato, M; Samra, P; Corzine, S; Strzelecka, E; Studenkov, P; Salvatore, R; Sedgwick, F; Kuntz, M; Lal, V; Lambert, D; Dentai, A; Pavinski, D; Zhang, J; Cornelius, J; Tsai, T; Behnia, B; Bostak, J; Dominic, V; Nilsson, A; Taylor, B; Rahn, J; Sanders, S; Sun, H; Wu, K-T; Pleumeekers, J; Muthiah, R; Missey, M; Schneider, R; Stewart, J; Reffle, M; Butrie, T; Nagarajan, R; Ziari, M; Kish, F; Welch, D

    2011-12-12

    In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

  12. Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

    NASA Astrophysics Data System (ADS)

    Longo, R. C.; Carrete, J.; Alemany, M. M. G.; Gallego, L. J.

    2013-02-01

    Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers.

  13. Micrometer-scale mixing with Pickering emulsions: biphasic reactions without stirring.

    PubMed

    Zhang, Wenjuan; Fu, Luman; Yang, Hengquan

    2014-02-01

    A general strategy that avoids stirring for organic/aqueous reactions involving solid catalysts is reported. The strategy involves converting a conventional biphasic system into a Pickering emulsion phase with micrometer-scale droplets ensuring good mixing. In test reactions, nitrotoluene reduction and epoxidation of allylic alcohols, the reaction efficiency is comparable to conventional stirrer-driven biphasic catalysis reaction systems. Short diffusion distances, arising from the compartmentalization of densely packed droplets, play an important role in boosting the reaction efficiency.

  14. Three-dimensional location of micrometer-sized particles in macroscopic domains using astigmatic aberrations.

    PubMed

    Fuchs, Thomas; Hain, Rainer; Kähler, Christian J

    2014-03-01

    This Letter presents a theoretical and experimental image formation study in the presence of astigmatic aberrations. A three-dimensional, macroscopic location scheme of micrometer-sized particles for the single camera astigmatism particle tracking velocimetry (APTV) technique is introduced. Average particle z position determination errors of the technique are as low as 0.33%, with a measurement depth of 40 mm. These accuracies show APTV's ability of measuring volumetric velocity fields in macroscopic domains with limited optical access.

  15. 2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors

    NASA Technical Reports Server (NTRS)

    Sulima, O. V.; Swaminathan, K.; Refaat, T. F.; Faleev, N. N.; Semenov, A. N.; Solov'ev, V. A.; Ivanov, S. V.; Abedin, M. N.; Singh, U. N.; Prather, D.

    2006-01-01

    We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

  16. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  17. Different freezing behavior of millimeter- and micrometer-scaled (NH₄)₂SO₄/H₂O droplets.

    PubMed

    Bogdan, A; Molina, M J; Tenhu, H; Mayer, E; Bertel, E; Loerting, T

    2011-01-26

    Although the freezing of aqueous solutions is important for nature and different branches of science and freeze-applications, our understanding of the freezing process is not complete. For example, numerous measurements of micrometer-scaled (NH(4))(2)SO(4)/H(2)O droplets report one freezing event below the eutectic point. However, measurements of larger millimeter-scaled droplets reveal two freezing events: the freezing out of ice and subsequent freezing of a residual freeze-concentrated solution. To resolve this apparent contradiction we performed numerous calorimetric measurements which indicate that the freezing of a residual solution of millimeter-scaled 5-38 wt% (NH(4))(2)SO(4) droplets occurs mainly between ∼ 210 and 225 K. We also find that micrometer-scaled droplets produce one freezing event which is within or in the vicinity of the ∼ 210-225 K region. This fact and the analysis of thermograms suggest that the residual solution of micrometer-scaled droplets may partly crystallize simultaneously with ice and partly transform to glass at T(g)≈172 K. Our results suggest for the first time that the size of (NH(4))(2)SO(4)/H(2)O droplets may affect the number of freezing events below the eutectic point.

  18. Modeling thermal infrared (2-14 micrometer) reflectance spectra of frost and snow

    NASA Technical Reports Server (NTRS)

    Wald, Andrew E.

    1994-01-01

    Existing theories of radiative transfer in close-packed media assume that each particle scatters independently of its neighbors. For opaque particles, such as are common in the thermal infrared, this assumption is not valid, and these radiative transfer theories will not be accurate. A new method is proposed, called 'diffraction subtraction', which modifies the scattering cross section of close-packed large, opaque spheres to account for the effect of close packing on the diffraction cross section of a scattering particle. This method predicts the thermal infrared reflectance of coarse (greater than 50 micrometers radius), disaggregated granular snow. However, such coarse snow is typically old and metamorphosed, with adjacent grains welded together. The reflectance of such a welded block can be described as partly Fresnel in nature and cannot be predicted using Mie inputs to radiative transfer theory. Owing to the high absorption coefficient of ice in the thermal infrared, a rough surface reflectance model can be used to calculate reflectance from such a block. For very small (less than 50 micrometers), disaggregated particles, it is incorrect in principle to treat diffraction independently of reflection and refraction, and the theory fails. However, for particles larger than 50 micrometers, independent scattering is a valid assumption, and standard radiative transfer theory works.

  19. Formulation of the Microbicide INP0341 for In Vivo Protection against a Vaginal Challenge by Chlamydia trachomatis

    PubMed Central

    Pedersen, Christian; Slepenkin, Anatoly; Andersson, Sara B. E.; Fagerberg, Jonas H.; Bergström, Christel A. S.; Peterson, Ellena M.

    2014-01-01

    The salicylidene acylhydrazide (SA) compounds have exhibited promising microbicidal properties. Previous reports have shown the SA compounds, using cell cultures, to exhibit activity against Chlamydia trachomatis, herpes simplex virus and HIV-1. In addition, using an animal model of a vaginal infection the SA compound INP0341, when dissolved in a liquid, was able to significantly protect mice from a vaginal infection with C. trachomatis. To expand upon this finding, in this report INP0341 was formulated as a vaginal gel, suitable for use in humans. Gelling agents (polymers) with inherent antimicrobial properties were chosen to maximize the total antimicrobial effect of the gel. In vitro formulation work generated a gel with suitable rheology and sustained drug release. A formulation containing 1 mM INP0341, 1.6 wt% Cremophor ELP (solubility enhancer) and 1.5 wt% poly(acrylic acid) (gelling and antimicrobial agent), was chosen for studies of efficacy and toxicity using a mouse model of a vaginal infection. The gel formulation was able to attenuate a vaginal challenge with C. trachomatis, serovar D. Formulations with and without INP0341 afforded protection, but the inclusion of INP0341 increased the protection. Mouse vaginal tissue treated with the formulation showed no indication of gel toxicity. The lack of toxicity was confirmed by in vitro assays using EpiVaginal tissues, which showed that a 24 h exposure to the gel formulation did not decrease the cell viability or the barrier function of the tissue. Therefore, the gel formulation described here appears to be a promising vaginal microbicide to prevent a C. trachomatis infection with the potential to be expanded to other sexually transmitted diseases. PMID:25356686

  20. Doclet To Synthesize UML

    NASA Technical Reports Server (NTRS)

    Barry, Matthew R.; Osborne, Richard N.

    2005-01-01

    The RoseDoclet computer program extends the capability of Java doclet software to automatically synthesize Unified Modeling Language (UML) content from Java language source code. [Doclets are Java-language programs that use the doclet application programming interface (API) to specify the content and format of the output of Javadoc. Javadoc is a program, originally designed to generate API documentation from Java source code, now also useful as an extensible engine for processing Java source code.] RoseDoclet takes advantage of Javadoc comments and tags already in the source code to produce a UML model of that code. RoseDoclet applies the doclet API to create a doclet passed to Javadoc. The Javadoc engine applies the doclet to the source code, emitting the output format specified by the doclet. RoseDoclet emits a Rose model file and populates it with fully documented packages, classes, methods, variables, and class diagrams identified in the source code. The way in which UML models are generated can be controlled by use of new Javadoc comment tags that RoseDoclet provides. The advantage of using RoseDoclet is that Javadoc documentation becomes leveraged for two purposes: documenting the as-built API and keeping the design documentation up to date.

  1. InP homojunction solar cell performance on the LIPS 3 flight experiment

    NASA Technical Reports Server (NTRS)

    Brinker, David J.; Hart, Russell E., Jr.; Weinberg, Irving; Smith, Brian S.

    1988-01-01

    Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 Flight Experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

  2. Plasma deposited diamondlike carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1984-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  3. Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature

    SciTech Connect

    Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C.; Chen, K.H.; Santhakumar, K.; Soga, T.

    2006-06-12

    The InN phase is grown in crystalline InP(100) substrates by 50 keV N{sup +} implantation at an elevated temperature of 400 deg. C followed by annealing at 525 deg. C in N{sub 2} ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak {approx}1.06 eV at temperatures {<=}150 K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.

  4. Dose and doping dependence of damage annealing in Fe MeV implanted InP

    SciTech Connect

    Carnera, A.; Fraboni, B.; Gasparotto, A. |; Priolo, F. |; Camporese, A.; Rossetto, G.; Frigeri, C.; Cassa, A.

    1996-12-31

    High energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5 {times} 10{sup 13} and 5 {times} 10{sup 14} at/cm{sup 2}. Annealing in the 650--800 C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analyzed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

  5. A 20-GHz ultra-high-speed InP DHBT comparator

    NASA Astrophysics Data System (ADS)

    Zhenxing, Huang; Lei, Zhou; Yongbo, Su; Zhi, Jin

    2012-07-01

    An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm2. It consumes 440 mW from a single -4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China.

  6. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    NASA Astrophysics Data System (ADS)

    Pantzas, K.; Le Bourhis, E.; Patriarche, G.; Troadec, D.; Beaudoin, G.; Itawi, A.; Sagnes, I.; Talneau, A.

    2016-03-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m-2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.

  7. Plasma deposited hydrogenated carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1985-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  8. Etching of InP by H3PO4, H2O2 Solutions

    NASA Astrophysics Data System (ADS)

    Mouton, A.; Sundararaman, C. S.; Lafontaine, H.; Poulin, S.; Currie, J. F.

    1990-10-01

    This paper deals with the chemical etching of (100) InP using a phosphoric acid and hydrogen peroxide mixture. It is shown that the etching rate is strongly dependent on the relative concentration of the two species; it is maximal for an equivolumic solution, and depending on the dilution it ranges from 70 to 20 Å/min. The activation energy of a non-diluted solution is approximately 14 kcal/mol. The post-etch surface state of the sample analysed by SEM and XPS, shows a very smooth surface for all concentrations, and the formation of a InPO4\\cdotxH2O layer. This solution can be used as a very precise etchant in devices processes.

  9. Determining the base resistance of InP HBTs: An evaluation of methods and structures

    NASA Astrophysics Data System (ADS)

    Nardmann, Tobias; Krause, Julia; Pawlak, Andreas; Schroter, Michael

    2016-09-01

    Many different methods can be found in the literature for determining both the internal and external base series resistance based on single transistor terminal characteristics. Those methods are not equally reliable or applicable for all technologies, device sizes and speeds. In this review, the most common methods are evaluated regarding their suitability for InP heterojunction bipolar transistors (HBTs) based on both measured and simulated data. Using data generated by a sophisticated physics-based compact model allows an evaluation of the extraction method precision by comparing the extracted parameter value to its known value. Based on these simulations, this study provides insight into the limitations of the applied methods, causes for errors and possible error mitigation. In addition to extraction methods based on just transistor terminal characteristics, test structures for separately determining the components of the base resistance from sheet and specific contact resistances are discussed and applied to serve as reference for the experimental evaluation.

  10. Optical properties of InP doping superlattices grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gal, M.; Viner, J. M.; Taylor, P. C.; Yaun, J. S.; Stringfellow, G. B.

    1987-04-01

    Photoluminescence (PL), time-resolved PL, and photoreflectance spectroscopy are applied to InP doping superlattices grown by metal organic chemical vapor deposition. It is observed that the emission peak and line shape depend on the optical excitation intensity; the peak of the CW PL spectrum increases in energy with the intensity of the pumping light; the highest energy peak is at 888 nm; and the time-resolved PL exhibits long decay times. The energy separation of the quantized subbands is studied by measuring the PR spectra of two samples. The measurements reveal that PR line shapes are explained by photomodulation of the subbands in the conduction band; these line shapes account for the dependence of the spectrum on the power of the exciting light and on the layer thickness.

  11. Anomalous photoluminescence in InP1−xBix

    PubMed Central

    Wu, Xiaoyan; Chen, Xiren; Pan, Wenwu; Wang, Peng; Zhang, Liyao; Li, Yaoyao; Wang, Hailong; Wang, Kai; Shao, Jun; Wang, Shumin

    2016-01-01

    Low temperature photoluminescence (PL) from InP1−xBix thin films with Bi concentrations in the 0–2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT). PMID:27291823

  12. Studies of Nonradiative Recombination Centers in GaAs and InP*

    NASA Astrophysics Data System (ADS)

    Tuzemen, S.; Liang, Difei; Ucer, K. B.; Williams, R. T.

    2001-03-01

    The "reverse contrast" recombination center in semi-insulating GaAs, so named because of its anti-correlation with EL2 defects in spatial mapping, has been attributed to As-vacancy centers.^1 Several details of the nature of its optical transitions and of its spatial distribution are among questions open to experimental investigation. We report experiments on spectroscopy and spatial mapping of defects in semi-insulating GaAs and Fe-doped InP. *ST acknowledges the CIES for support as a Fulbright Scholar at WFU. The research at WFU is supported by NSF grant DMR-9732023. Confocal microscopy in cooperation with K. Grant and the MicroMed Facility of WFU. 1. C. Le Berre, C. Corbel, R. Mih, M. R. Brozel, S. Tüzemen, S. Kuisma, K. Saarinen, P. Hautojarvi, and R. Fornari, Appl. Phys. Lett. 66, 2354 (1995).

  13. On-orbit results of the LIPS 3/InP homojunction solar cell experiment

    NASA Technical Reports Server (NTRS)

    Brinker, David J.

    1989-01-01

    The flight performance of NASA Lewis Research Center's indium phosphide homojunction solar cell module on the LIPS 3 satellite is presented. A module of four n+p cells was fabricated and has been on-orbit on the LIPS 3 spacecraft since 1987. The experimental objective is the measurement of InP cell performance in the natural radiation environment of the 1100 kilometer altitude, 60 deg inclination, circular orbit. Flight data from the first year is near expected values, with no degradation in short-circuit current. The temperature dependence of current-voltage parameters is included along with the laboratory radiation tolerance studies necessary for normalization and analysis of the data. Details of the cell structure and flight module design are also discussed.

  14. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    NASA Technical Reports Server (NTRS)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  15. Effect of native oxide mechanical deformation on InP nanoindentation

    NASA Astrophysics Data System (ADS)

    Almeida, C. M.; Prioli, R.; Ponce, F. A.

    2008-12-01

    Native oxide has been found to have a noticeable effect on the mechanical deformation of InP during nanoindentation. The indentations were performed using spherical diamond tips and the residual impressions were studied by atomic force microscopy. It has been observed that in the early stages of mechanical deformation, plastic flow occurs in the oxide layer while the indium phosphide is still in the elastic regime. The deformed native oxide layer results in a pile-up formation that causes an increase in the contact area between the tip and the surface during the nanoindentation process. This increase in the projected contact area is shown to contribute to the apparent high pressure sustained by the crystal before the onset of plastic deformation. It is also shown that the stress necessary to generate the first dislocations from the crystal surface is ˜3 GPa higher than the stress needed for slip to occur when dislocations are already present in the crystalline structure.

  16. Bias-dependent spectral tuning in InP nanowire-based photodetectors

    NASA Astrophysics Data System (ADS)

    Jain, Vishal; Heurlin, Magnus; Karimi, Mohammad; Hussain, Laiq; Aghaeipour, Mahtab; Nowzari, Ali; Berg, Alexander; Nylund, Gustav; Capasso, Federico; Samuelson, Lars; Borgström, Magnus T.; Pettersson, Håkan

    2017-03-01

    Nanowire array ensembles contacted in a vertical geometry are extensively studied and considered strong candidates for next generations of industrial scale optoelectronics. Key challenges in this development deal with optimization of the doping profile of the nanowires and the interface between nanowires and transparent top contact. Here we report on photodetection characteristics associated with doping profile variations in InP nanowire array photodetectors. Bias-dependent tuning of the spectral shape of the responsivity is observed which is attributed to a Schottky-like contact at the nanowire–ITO interface. Angular dependent responsivity measurements, compared with simulated absorption spectra, support this conclusion. Furthermore, electrical simulations unravel the role of possible self-gating effects in the nanowires induced by the ITO/SiO x wrap-gate geometry. Finally, we discuss possible reasons for the observed low saturation current at large forward biases.

  17. Bias-dependent spectral tuning in InP nanowire-based photodetectors.

    PubMed

    Jain, Vishal; Heurlin, Magnus; Karimi, Mohammad; Hussain, Laiq; Aghaeipour, Mahtab; Nowzari, Ali; Berg, Alexander; Nylund, Gustav; Capasso, Federico; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

    2017-03-17

    Nanowire array ensembles contacted in a vertical geometry are extensively studied and considered strong candidates for next generations of industrial scale optoelectronics. Key challenges in this development deal with optimization of the doping profile of the nanowires and the interface between nanowires and transparent top contact. Here we report on photodetection characteristics associated with doping profile variations in InP nanowire array photodetectors. Bias-dependent tuning of the spectral shape of the responsivity is observed which is attributed to a Schottky-like contact at the nanowire-ITO interface. Angular dependent responsivity measurements, compared with simulated absorption spectra, support this conclusion. Furthermore, electrical simulations unravel the role of possible self-gating effects in the nanowires induced by the ITO/SiO x wrap-gate geometry. Finally, we discuss possible reasons for the observed low saturation current at large forward biases.

  18. Self-catalyzed Growth of InAs Nanowires on InP Substrate

    NASA Astrophysics Data System (ADS)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2017-01-01

    We report on the self-catalyzed growth of InAs nanowires on InP substrate by metal-organic chemical vapor deposition. At a moderate V/III ratio, tapered nanowires are obtained, suggesting a strong surface diffusion effect. Dense twin faults are observed perpendicular to the nanowire growth direction due to the fluctuation of In atoms in the droplet originating from the surface diffusion effect. At a lower V/III ratio, the nanowires exhibit kinking, which is associated with a high adhesion due to a large sticking coefficient of TMIn. The twin faults are dramatically suppressed and even completely eliminated in the NW branch after kinking, which is attributed to a stable In supply with a negligible diffusion effect. This work provides a method for the fabrication of defect-free InAs nanowires.

  19. Diffusion length damage coefficient and annealing studies in proton-irradiated InP

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Vargas-Aburto, Carlos; Bailey, Sheila G.; Williams, Wendell

    1993-01-01

    We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

  20. Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

    NASA Astrophysics Data System (ADS)

    Pantzas, Konstantinos; Patriarche, Gilles; Le Bourhis, Eric; Troadec, David; Itawi, Ahmad; Beaudoin, Grégoire; Sagnes, Isabelle; Talneau, Anne

    2013-08-01

    Instrumented nanoindentation is used in conjunction with scanning transmission electron microscopy to evaluate the mechanical resistance at the bonding interface of a 450 nm thick InP membrane bonded oxide-free to Si. Indentation using a Berkovich tip is shown to cause the planes in InP to rotate by as much as 16°. The shear stress resulting from this rotation causes the InP membrane to buckle, forming a debonded blister around the indented zone. The geometry of this blister is used to compute the surface bond energy of InP bonded oxide-free to Si. An average surface bonding energy of 585 mJ m-2 is reported.

  1. Enhancement of intensity-dependent absorption in InP and GaAs at 1.9 microns by doping

    NASA Technical Reports Server (NTRS)

    Li, N.-L.; Bass, M.; Swimm, R.

    1985-01-01

    It is pointed out that the study of intensity-dependent absorption (IDA) in general, and two-photon absorption (TPA), in particular, has suffered from experimental difficulties and inadequate theoretical models. Bass et al. (1979) could improve the experimental situation by making use of laser calorimetry to obtain directly the TPA coefficient of a medium with a high degree of sensitivity. In the present investigation, the employed technique has been used to study the effect of deep level dopants on IDA in InP and GaAs. It is found that the coefficient for IDA is strongly dependent on the presence of Fe in InP and Cr in GaAs. The conducted investigation had the objective to examine the effect of deep level impurities on IDA processes in InP and GaAs. Fe-doped InP and Cr-doped GaAs were compared with undoped crystals.

  2. THE PHYSICS OF PROTOPLANETESIMAL DUST AGGLOMERATES. VI. EROSION OF LARGE AGGREGATES AS A SOURCE OF MICROMETER-SIZED PARTICLES

    SciTech Connect

    Schraepler, Rainer; Blum, Juergen

    2011-06-20

    Observed protoplanetary disks consist of a large amount of micrometer-sized particles. Dullemond and Dominik pointed out for the first time the difficulty in explaining the strong mid-infrared excess of classical T Tauri stars without any dust-retention mechanisms. Because high relative velocities in between micrometer-sized and macroscopic particles exist in protoplanetary disks, we present experimental results on the erosion of macroscopic agglomerates consisting of micrometer-sized spherical particles via the impact of micrometer-sized particles. We find that after an initial phase, in which an impacting particle erodes up to 10 particles of an agglomerate, the impacting particles compress the agglomerate's surface, which partly passivates the agglomerates against erosion. Due to this effect, the erosion halts for impact velocities up to {approx}30 m s{sup -1} within our error bars. For higher velocities, the erosion is reduced by an order of magnitude. This outcome is explained and confirmed by a numerical model. In a next step, we build an analytical disk model and implement the experimentally found erosive effect. The model shows that erosion is a strong source of micrometer-sized particles in a protoplanetary disk. Finally, we use the stationary solution of this model to explain the amount of micrometer-sized particles in the observational infrared data of Furlan et al.

  3. Spanning From Atoms to Micrometers in Simulations of Contact, Adhesion and Friction

    NASA Astrophysics Data System (ADS)

    Robbins, Mark

    Improved understanding of the forces between realistic solid surfaces is needed to optimize adhesion and friction. Modeling these forces is challenging because they arise from interactions between atoms separated by less than a nanometer, but the number and spatial distribution of these contacting atoms depends on surface roughness and deformation on micrometer and larger scales. There are also strong scale effects in the role of elastic deformations along the surface. The talk will first describe a seamless Greens function (GF) method that allows a full treatment of elastic deformations and atomic contact for micrometer scale surfaces and multibody potentials. Next applications of the method to calculations of the contact area, contact stiffness, adhesion and friction for a range of geometries and interactions will be described. The results can be captured with simple analytic expressions and explain why most contacting surfaces do not adhere. Theoretical and experimental studies of single nanometer-scale asperities show that the frictional shear stress depends strongly on whether surfaces are commensurate. A large constant stress is obtained for identical, aligned crystalline surfaces, but the stress averages to zero in the more common case of incommensurate surfaces. The resulting ultralow friction is called superlubricity and is found in experiments and simulations of small contacts. Our simulations reveal dramatic changes in this behavior because different parts of the surface are able to advance independently as the contact radius increases towards micrometer scales. The friction between identical surfaces drops with increasing radius and then saturates at a low value. The force between incommensurate surfaces saturates at a similar value that can be related to the Peierls stress for dislocation motion at the interface. Studies of multiasperity contacts also show that incoherent motion along the interface can lead to pronounced changes in the macroscopic

  4. Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography

    NASA Astrophysics Data System (ADS)

    Kim, Hung-Eil; Ahn, Chang-Nam; Kim, KeunYoung; Baik, Ki-Ho

    1995-12-01

    Alternating phase shift mask (PSM) is very effective to memory devices which have highly repeated patterns. In order to apply the alternating PSM to a real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also designed various hard defects to check defect printability on a wafer. Using i-line lithography (0.50 NA, 0.46 sigma) with alternating PSM, we obtained a useful DOF of 1.2 micrometer for a bit line of 256 M DRAM. The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.

  5. Highly Birefringent Microstructure Fiber with Zero Dispersion Wavelength at 0.64 Micrometer

    NASA Astrophysics Data System (ADS)

    Konar, Swapan; Ghorai, Swapan K.; Bhattacharya, Rakhi

    In this article, we have designed a microstructure fiber, which consists of elliptical air holes at the core region. We have investigated its optical properties using finite difference time domain method. The fundamental mode of the proposed microstructure fiber can induce very high birefringenceE It has been realized that the value of birefringence is mainly decided by the shape of the air holes present in the first and second rings. The zero dispersion wavelengths of both fast and slow axes have been shifted to 0E64 micrometer. The proposed birefringent microstructure fiber may be useful in optical communication and sensors.

  6. Radiation cooler for 10 micrometer wavelength engineering model receiver model no. 7172, serial no. 201

    NASA Technical Reports Server (NTRS)

    1975-01-01

    The design, fabrication, and testing of a radiative cooler are described. This cooler is an engineering model suitable for bench testing in the laboratory as a part of the 10-micrometer wavelength engineering model receiver, and conforms to the standard radiative cooler configuration, except that the inner stage and its support system were redesigned to accommodate the larger, heavier SAT detector. This radiative cooler will cool the detector to cryogenic temperature levels when the receiver is in a space environment or in a suitable thermal vacuum chamber. Equipment specifications are given along with the results of thermal tests, vibration tests, and electrical integrity tests.

  7. Development of a 0.5 micrometer incoherent Doppler lidar for space application

    NASA Technical Reports Server (NTRS)

    Rosenberg, A.; Sroga, J.

    1985-01-01

    This paper describes the current status of a prototype 0.53 micrometer Doppler lidar system under development at RCA. This system consists of a frequency doubled Nd:YAG laser constrained to yield a narrow bandwidth, single frequency pulse, a Fabry-Perot Inteferometer (FPI) using an Image Plane Detector (IPD) to measure the backscatter spectrum for each pulse and a Data Acquisition System (DAS) to sample, store, and analyze the backscattered signal. These individual subsystem components have been assembled and preliminary atmospheric testing has recently begun. Atmospheric backscatter spectra are presented which demonstrate the capabilities of this system to distinguish between return signals from aerosols, molecules, and clouds.

  8. Sub-micrometer transverse beam size diagnostics using optical transition radiation

    NASA Astrophysics Data System (ADS)

    Kruchinin, K.; Aryshev, A.; Karataev, P.; Bolzon, B.; Lefevre, T.; Mazzoni, S.; Shevelev, M.; Boogert, S. T.; Nevay, L. J.; Terunuma, N.; Urakawa, J.

    2014-05-01

    Optical transition radiation (OTR) arising when a relativistic charged particle crosses a boundary between two media with different optical properties is widely used as a tool for diagnostics of particle beams in modern accelerator facilities. The resolution of the beam profile monitors based on OTR depends on different effects of the optical system such as spherical and chromatic aberrations and diffraction. In this paper we present a systematic study of the different optical effects influencing the OTR beam profile monitor resolution. Obtained results have shown that such monitors can be used for sub-micrometer beam profile diagnostics. Further improvements and studies of the monitor are discussed.

  9. Design and construction of a coelostat for heterodyne measurements at a wavelength of 10 micrometer

    NASA Astrophysics Data System (ADS)

    Strzoda, Rainer

    1987-01-01

    A heliostat was designed and built as carrier for a 10 micrometer IR heterodyne spectrometer for transmission measurements in the Earth atmosphere for investigations of solar oscillations. The high wavelength resolution allows the determination of line profiles and transition frequencies with high precision. A series of highly resolved ozone absorption spectra lead to the vertical ozone distribution, in good agreement with reference measurements. An improvement of the results is expected after a more precise determination of ozone spectroscopic data from laboratory measurements. The measurement uncertainties are still too high to determine a frequency spectrum of solar oscillations.

  10. Liquid scanning transmission electron microscopy: Nanoscale imaging in micrometers-thick liquids

    NASA Astrophysics Data System (ADS)

    Schuh, Tobias; de Jonge, Niels

    2014-02-01

    Scanning transmission electron microscopy (STEM) of specimens in liquid is possible using a microfluidic chamber with thin silicon nitride windows. This paper includes an analytic equation of the resolution as a function of the sample thickness and the vertical position of an object in the liquid. The equipment for STEM of liquid specimen is briefly described. STEM provides nanometer resolution in micrometer-thick liquid layers with relevance for both biological research and materials science. Using this technique, we investigated tagged proteins in whole eukaryotic cells, and gold nanoparticles in liquid with time-lapse image series. Possibly future applications are discussed. xml:lang="fr"

  11. A "comb" structure measurement of a micrometer displacement in laser plasma propulsion

    NASA Astrophysics Data System (ADS)

    Zheng, Z. Y.; Gao, L.; Gao, H.; Xing, J.; Wu, X. W.

    2014-08-01

    A "comb" structure of beam intensity distribution is achieved to measure target displacements at the micrometer level in laser plasma propulsion experiments. Compared with single-beam and double-beam detection, the "comb" structure is more suitable for a thin film targets with a velocity lower than 10-2 m/s. Combined with a light-electric monitor, the "comb" structure can be used to measure a velocity range from 10-3 to 1 m/s. Using this "comb" structure, the coupling coefficient of aluminum ablated by nanosecond pulse laser in air is determined and compared. The results indicate that this "comb" structure is an effective experimental approach.

  12. Large-scale proton radiography with micrometer spatial resolution using femtosecond petawatt laser system

    SciTech Connect

    Wang, W. P.; Shen, B. F. Zhang, H.; Lu, X. M.; Wang, C.; Liu, Y. Q.; Yu, L. H.; Chu, Y. X.; Li, Y. Y.; Xu, T. J.; Zhang, H.; Zhai, S. H.; Leng, Y. X.; Liang, X. Y.; Li, R. X.; Xu, Z. Z.

    2015-10-15

    An image of dragonfly with many details is obtained by the fundamental property of the high-energy proton source on a femtosecond petawatt laser system. Equal imaging of the dragonfly and high spatial resolution on the micrometer scale are simultaneously obtained. The head, wing, leg, tail, and even the internal tissue structures are clearly mapped in detail by the proton beam. Experiments show that image blurring caused by multiple Coulomb scattering can be reduced to a certain extent and the spatial resolution can be increased by attaching the dragonfly to the RCFs, which is consistent with theoretical assumptions.

  13. Plasticity of Micrometer-Scale Single-Crystals in Compression: A Critical Review (PREPRINT)

    DTIC Science & Technology

    2008-10-01

    AFRL-RX-WP-TP-2008-4326 PLASTICITY OF MICROMETER-SCALE SINGLE- CRYSTALS IN COMPRESSION: A CRITICAL REVIEW (PREPRINT) Michael D. Uchic... Michael D. Uchic and Dennis M. Dimiduk (AFRL/RXLMD) Paul A. Shade (The Ohio State University) 5d. PROJECT NUMBER 4347 5e. TASK NUMBER RG 5f...a critical review    Michael  D. Uchic1, Paul A. Shade2, and Dennis M. Dimiduk1    1 Air Force Research Laboratory, Materials & Manufacturing

  14. A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Thao, Dinh Nhu

    2017-03-01

    This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.

  15. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  16. Self-catalyzed growth of pure zinc blende 〈110〉 InP nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Wu, Yao; Ren, Xiaomin

    2015-07-13

    We demonstrate the self-catalyzed vapor-liquid-solid growth of 〈110〉 InP nanowires (NWs) by metal organic chemical vapor deposition. The 〈110〉 InP nanowire is formed via a spontaneous kinking from the original 〈111〉 growth direction, which is attributed to instabilities at the liquid/solid interface caused by a fast In incorporation into the droplet. The NW length before kinking has a nearly linear relationship with the diameter, offering a way to control the NW morphology for different applications. The 〈110〉 nanowire exhibits pure zinc blende crystal structure and a narrower emission linewidth in comparison with a typical 〈111〉 nanowire, demonstrating its potential applications in high-performance electronic and photonic devices.

  17. Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

    1993-01-01

    Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

  18. The LANDSAT system operated in Brazil by CNPq/INPE - results obtained in the area of mapping and future perspectives

    NASA Technical Reports Server (NTRS)

    Dejesusparada, N. (Principal Investigator); Barbosa, M. N.

    1981-01-01

    The LANDSAT system, operated in the country by CNPg/INPE since 1973, systematically acquires, produces, and distributes both multispectral and panchromatic images obtained through remote sensing satellites to thousands of researchers and technicians involved in the natural resources survey. To cooperate in the solution of national problems, CNPq/INPE is developing efforts in the area of manipulation of those images with the objective of making them useful as planimetric bases for the simple revision of already published maps or for its utilization as basic material in regions not yet reliability mapped. The results obtained from performed tests are presented and the existing limitations are discussed. The new system purchased to handle data from the next series of LANDSAT as well as from MAPSAT and SPOT which will be in operation within the 80's decade, and are designed not only for natural resources survey but also for the solution of cartographic problems.

  19. Current impulse response of thin InP p+-i-n+ diodes using full band structure Monte Carlo method

    NASA Astrophysics Data System (ADS)

    You, A. H.; Cheang, P. L.

    2007-02-01

    A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p+-i-n+ diodes with the multiplication region of 0.2μm is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p+-i-n+ diodes with multiplication lengths of 0.05 and 0.2μm using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.

  20. Filtration of bioaerosols using a granular metallic filter with micrometer-sized collectors

    SciTech Connect

    Damit, Brian E; Bischoff, Brian L; Phelps, Tommy Joe; Wu, Dr. Chang-Yu; Cheng, Mengdawn

    2014-01-01

    Several experimental studies with granular bed filters composed of micrometer-sized spherical or sintered metallic granules have demonstrated their use in aerosol filtration. However, the effectiveness of these metallic membrane filters against bioaerosols has not been established. In this work, the filtration efficiency and filter quality of these filters against airborne B. subtilis endospore and MS2 virus were determined as a function of face velocity and loading time. In experiments, a physical removal efficiency greater than 99.9% and a viable removal efficiency of greater than 5-log were observed for both bacterial spore and viral aerosols. A lower face velocity produced both higher collection efficiency and filter quality for virus but was not statistically significant for spore filtration. Although the filter had high filtration efficiency of the test bioaerosols, the filter's high pressure drop resulted in a low filter quality (0.25-0.75 kPa- 1). Overall, filters with micrometer-sized collectors capture bioaerosols effectively but their applications in aerosol filtration may be limited by their high pressure drop.

  1. Absolute distance measurement with micrometer accuracy using a Michelson interferometer and the iterative synthetic wavelength principle.

    PubMed

    Alzahrani, Khaled; Burton, David; Lilley, Francis; Gdeisat, Munther; Bezombes, Frederic; Qudeisat, Mohammad

    2012-02-27

    We present a novel system that can measure absolute distances of up to 300 mm with an uncertainty of the order of one micrometer, within a timeframe of 40 seconds. The proposed system uses a Michelson interferometer, a tunable laser, a wavelength meter and a computer for analysis. The principle of synthetic wave creation is used in a novel way in that the system employs an initial low precision estimate of the distance, obtained using a triangulation, or time-of-flight, laser system, or similar, and then iterates through a sequence of progressively smaller synthetic wavelengths until it reaches micrometer uncertainties in the determination of the distance. A further novel feature of the system is its use of Fourier transform phase analysis techniques to achieve sub-wavelength accuracy. This method has the major advantages of being relatively simple to realize, offering demonstrated high relative precisions better than 5 × 10(-5). Finally, the fact that this device does not require a continuous line-of-sight to the target as is the case with other configurations offers significant advantages.

  2. Portable 4.6 Micrometers Laser Absorption Spectrometer for Carbon Monoxide Monitoring and Fire Detection

    NASA Technical Reports Server (NTRS)

    Briggs, Ryan M.; Frez, Clifford; Forouhar, Siamak; May, Randy D.; Ruff, Gary A.

    2013-01-01

    The air quality aboard manned spacecraft must be continuously monitored to ensure crew safety and identify equipment malfunctions. In particular, accurate real-time monitoring of carbon monoxide (CO) levels helps to prevent chronic exposure and can also provide early detection of combustion-related hazards. For long-duration missions, environmental monitoring grows in importance, but the mass and volume of monitoring instruments must be minimized. Furthermore, environmental analysis beyond low-Earth orbit must be performed in-situ, as sample return becomes impractical. Due to their small size, low power draw, and performance reliability, semiconductor-laser-based absorption spectrometers are viable candidates for this purpose. To reduce instrument form factor and complexity, the emission wavelength of the laser source should coincide with strong fundamental absorption lines of the target gases, which occur in the 3 to 5 micrometers wavelength range for most combustion products of interest, thereby reducing the absorption path length required for low-level concentration measurements. To address the needs of current and future NASA missions, we have developed a prototype absorption spectrometer using a semiconductor quantum cascade laser source operating near 4.6 micrometers that can be used to detect low concentrations of CO with a compact single-pass absorption cell. In this study, we present the design of the prototype instrument and report on measurements of CO emissions from the combustion of a variety of aerospace plastics.

  3. Novel Sample Preparation Technique To Improve Spectromicroscopic Analyses of Micrometer-Sized Particles.

    PubMed

    Höschen, Carmen; Höschen, Till; Mueller, Carsten W; Lugmeier, Johann; Elgeti, Stefan; Rennert, Thilo; Kögel-Knabner, Ingrid

    2015-08-18

    Microscale processes occurring at biogeochemical interfaces in soils and sediments have fundamental impacts on phenomena at larger scales. To obtain the organo-mineral associations necessary for the study of biogeochemical interfaces, bulk samples are usually fractionated into microaggregates or micrometer-sized single particles. Such fine-grained mineral particles are often prepared for nanoscale secondary ion mass spectroscopy (NanoSIMS) investigations by depositing them on a carrier. This introduces topographic differences, which can strongly affect local sputtering efficiencies. Embedding in resin causes undesired C impurities. We present a novel method for preparing polished cross-sections of micrometer-sized primary soil particles that overcomes the problems of topography and C contamination. The particles are coated with a marker layer, embedded, and well-polished. The interpretation of NanoSIMS data is assisted by energy-dispersive X-ray spectroscopy on cross-sections prepared by a focused ion beam. In the cross-sections, organic assemblages on the primary soil particles become visible. This novel method significantly improves the quality of NanoSIMS measurements on grainy mineral samples, enabling better characterization of soil biogeochemical interfaces. In addition, this sample preparation technique may also improve results from other (spectro-) microscopic techniques.

  4. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  5. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    NASA Astrophysics Data System (ADS)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  6. Hydrogen evolution at a Pt-modified InP photoelectrode: Improvement of current-voltage characteristics by HCl etching

    SciTech Connect

    Kobayashi, Hikaru; Mizuno, Fumiaki; Nakato, Yoshihiro; Tsubomura, Hiroshi )

    1991-01-24

    Hydrogen photoevolution at p-InP electrodes coated with platinum and palladium has been studied. Efficient and stable solar to chemical energy conversion has been achieved after etching the electrodes with concentrated HCl. The current-voltage (I-V) behavior of the as-prepared electrode covered with a continuous Pt layer is poor, due probably to the presence of defect states in InP. The photocurrent density of this electrode decreases with time under illumination, presumably due to an increase in the defect density. After etching of the electrode with concentrated HCl, the barrier height is increased to 1.0 V, and the I-V characteristics are improved remarkably, showing no degradation under illumination. SEM, XPS, and AES analyses show that the concentrated HCl solution dissolves the InP substrate in the InP/Pt interfacial region, and simultaneously part of the Pt is removed from the InP surface. The I-V characteristics of the Pt-deposited electrodes are unaffected by hydrogen or nitrogen bubbling and the reason is discussed.

  7. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

    PubMed

    Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

    2016-10-12

    The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

  8. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

    PubMed

    Joyce, Hannah J; Docherty, Callum J; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2013-05-31

    We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵  cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

  9. Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

    NASA Technical Reports Server (NTRS)

    Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

    1990-01-01

    Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

  10. The Trp53-Trp53inp1-Tnfrsf10b Pathway Regulates the Radiation Response of Mouse Spermatogonial Stem Cells

    PubMed Central

    Ishii, Kei; Ishiai, Masamichi; Morimoto, Hiroko; Kanatsu-Shinohara, Mito; Niwa, Ohtsura; Takata, Minoru; Shinohara, Takashi

    2014-01-01

    Summary Germ cells are thought to exhibit a unique DNA damage response that differs from that of somatic stem cells, and previous studies suggested that Trp53 is not involved in the survival of spermatogonial stem cells (SSCs) after irradiation. Here, we report a critical role for the Trp53-Trp53inp1-Tnfrsf10b pathway during radiation-induced SSC apoptosis. Spermatogonial transplantation revealed that Trp53 deficiency increased the survival of SSCs after irradiation. Although Bbc3, a member of the intrinsic apoptotic pathway, was implicated in apoptosis of germ and somatic stem cells, Bbc3 depletion inhibited apoptosis in committed spermatogonia, but not in SSCs. In contrast, inhibition of Tnfrsf10b, an extrinsic apoptosis regulator, rescued SSCs. Tnfrsf10b, whose deficiency protected SSCs, was upregulated by Trp53inp1 upon irradiation. These results suggest that the Trp53-Trp53inp1-Tnfrsf10b pathway responds to genotoxic damage in SSCs and that stem and progenitor cells exhibit distinct DNA damage responses in self-renewing tissue. PMID:25358794

  11. Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs

    NASA Astrophysics Data System (ADS)

    Descouts, B.; Duhamel, N.; Godefroy, S.; Krauz, P.

    Ion implantation in semiconductors provides a doping technique with several advantages over more conventional doping methods and is now extensively used for device applications, e.g. field effect transistors (MESFET GaAs, MIS (InP), GaAs/GaAlAs heterojunction bipolar transistors (HBT). Because of the lattice disorder produced by the implantation, the dopant must be made electrically active by a postimplant anneal. As the device performances are very dependent on its electrical characteristics, the anneal is a very important stage of the process. Rapid anneal is known to provide less exodiffusion and less induffusion of impurities compared to conventional furnace anneal, so this technique has been used in this work to activate an n-type dopant (Si) in InP and a p-type dopant (Mg) in GaAs and GaAs/GaAIAs. These two ions have been chosen to realize implanted MIS InP and the base contacts for GaAs/GaAlAs HBTs. The experimental conditions to obtain the maximum electrical activity in these two cases will be detailed. For example, although we have not been able to obtain a flat profile in Mg + implanted GaAs/GaAlAs heterostructure by conventional thermal anneal, rapid thermal anneal gives a flat hole profile over a depth of 0.5 μm with a concentration of 1 x 10 19 cm -3.

  12. Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

    1989-01-01

    Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

  13. TP53INP2/DOR, a mediator of cell autophagy, promotes rDNA transcription via facilitating the assembly of the POLR1/RNA polymerase I preinitiation complex at rDNA promoters.

    PubMed

    Xu, Yinfeng; Wan, Wei; Shou, Xin; Huang, Rui; You, Zhiyuan; Shou, Yanhong; Wang, Lingling; Zhou, Tianhua; Liu, Wei

    2016-07-02

    Cells control their metabolism through modulating the anabolic and catabolic pathways. TP53INP2/DOR (tumor protein p53 inducible nuclear protein 2), participates in cell catabolism by serving as a promoter of autophagy. Here we uncover a novel function of TP53INP2 in protein synthesis, a major biosynthetic and energy-consuming anabolic process. TP53INP2 localizes to the nucleolus through its nucleolar localization signal (NoLS) located at the C-terminal domain. Chromatin immunoprecipitation (ChIP) assays detected an association of TP53INP2 with the ribosomal DNA (rDNA), when exclusion of TP53INP2 from the nucleolus repressed rDNA promoter activity and the production of ribosomal RNA (rRNA) and proteins. The removal of TP53INP2 also impaired the association of the POLR1/RNA polymerase I preinitiation complex (PIC) with rDNA. Further, TP53INP2 interacts directly with POLR1 PIC, and is required for the assembly of the complex. These data indicate that TP53INP2 promotes ribosome biogenesis through facilitating rRNA synthesis at the nucleolus, suggesting a dual role of TP53INP2 in cell metabolism, assisting anabolism on the nucleolus, and stimulating catabolism off the nucleolus.

  14. Realistic multiband k .p approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase

    NASA Astrophysics Data System (ADS)

    Faria Junior, Paulo E.; Campos, Tiago; Bastos, Carlos M. O.; Gmitra, Martin; Fabian, Jaroslav; Sipahi, Guilherme M.

    2016-06-01

    Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite reports in the literature of ab initio band structures for these wurtzite compounds, we still lack effective multiband models and parameter sets that can be simply used to investigate physical properties of such systems, for instance, under quantum confinement effects. In order to address this deficiency, in this study we calculate the ab initio band structure of bulk InAs and InP in the wurtzite phase and develop an 8 ×8 k .p Hamiltonian to describe the energy bands around the Γ point. We show that our k .p model is robust and can be fitted to describe the important features of the ab initio band structure. The correct description of the spin-splitting effects that arise due to the lack of inversion symmetry in wurtzite crystals is obtained with the k -dependent spin-orbit term in the Hamiltonian, often neglected in the literature. All the energy bands display a Rashba-like spin texture for the in-plane spin expectation value. We also provide the density of states and the carrier density as functions of the Fermi energy. Alternatively, we show an analytical description of the conduction band, valid close to the Γ point. The same fitting procedure is applied to the 6 ×6 valence band Hamiltonian. However, we find that the most reliable approach is the 8 ×8 k .p Hamiltonian for both compounds. The k .p Hamiltonians and parameter sets that we develop in this paper provide a reliable theoretical framework that can be easily applied to investigate electronic, transport, optical, and spin properties of InAs- and InP-based nanostructures.

  15. Aerosol measurements during COPE: composition, size, and sources of CCN and INPs at the interface between marine and terrestrial influences

    NASA Astrophysics Data System (ADS)

    Taylor, Jonathan W.; Choularton, Thomas W.; Blyth, Alan M.; Flynn, Michael J.; Williams, Paul I.; Young, Gillian; Bower, Keith N.; Crosier, Jonathan; Gallagher, Martin W.; Dorsey, James R.; Liu, Zixia; Rosenberg, Philip D.

    2016-09-01

    Heavy rainfall from convective clouds can lead to devastating flash flooding, and observations of aerosols and clouds are required to improve cloud parameterisations used in precipitation forecasts. We present measurements of boundary layer aerosol concentration, size, and composition from a series of research flights performed over the southwest peninsula of the UK during the COnvective Precipitation Experiment (COPE) of summer 2013. We place emphasis on periods of southwesterly winds, which locally are most conducive to convective cloud formation, when marine air from the Atlantic reached the peninsula. Accumulation-mode aerosol mass loadings were typically 2-3 µg m-3 (corrected to standard cubic metres at 1013.25 hPa and 273.15 K), the majority of which was sulfuric acid over the sea, or ammonium sulfate inland, as terrestrial ammonia sources neutralised the aerosol. The cloud condensation nuclei (CCN) concentrations in these conditions were ˜ 150-280 cm-3 at 0.1 % and 400-500 cm-3 at 0.9 % supersaturation (SST), which are in good agreement with previous Atlantic measurements, and the cloud drop concentrations at cloud base ranged from 100 to 500 cm-3. The concentration of CCN at 0.1 % SST was well correlated with non-sea-salt sulfate, meaning marine sulfate formation was likely the main source of CCN. Marine organic aerosol (OA) had a similar mass spectrum to previous measurements of sea spray OA and was poorly correlated with CCN. In one case study that was significantly different to the rest, polluted anthropogenic emissions from the southern and central UK advected to the peninsula, with significant enhancements of OA, ammonium nitrate and sulfate, and black carbon. The CCN concentrations here were around 6 times higher than in the clean cases, and the cloud drop number concentrations were 3-4 times higher. Sources of ice-nucleating particles (INPs) were assessed by comparing different parameterisations used to predict INP concentrations, using measured

  16. Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth

    NASA Astrophysics Data System (ADS)

    Junesand, Carl; Hu, Chen; Wang, Zhechao; Metaferia, Wondwosen; Dagur, Pritesh; Pozina, Galia; Hultman, Lars; Lourdudoss, Sebastian

    2012-09-01

    Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.

  17. A simple route to synthesize manganese germanate nanorods

    SciTech Connect

    Pei, L.Z. Yang, Y.; Yuan, C.Z.; Duan Taike; Zhang Qianfeng

    2011-06-15

    Manganese germanate nanorods have been synthesized by a simple route using germanium dioxide and manganese acetate as the source materials. X-ray diffraction observation shows that the nanorods are composed of orthorhombic and monoclinic manganese germanate phases. Scanning electron microscopy and transmission electron microscopy observations display that the manganese germanate nanorods have flat tips with the length of longer than 10 micrometers and diameter of 60-350 nm, respectively. The role of the growth conditions on the formation of the manganese germanate nanorods shows that the proper selection and combination of the growth conditions are the key factor for controlling the formation of the manganese germanate nanorods. The photoluminescence spectrum of the manganese germanate nanorods exhibits four fluorescence emission peaks centered at 422 nm, 472 nm, 487 nm and 530 nm showing the application potential for the optical devices. - Research Highlights: {yields} Manganese germanate nanorods have been synthesized by simple hydrothermal process. {yields} The formation of manganese germanate nanorods can be controlled by growth conditions. {yields} Manganese germanate nanorods exhibit good PL emission ability for optical device.

  18. An ab initio study of the polytypism in InP

    PubMed Central

    Dacal, Luis C. O.; Cantarero, A.

    2016-01-01

    The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected due to the fact that the wurtzite stacking sequence (ABAB) is part of the zincblende one (ABCABC), but with an unexpected asymmetry between the valence and the conduction bands. We also present results for the complex dielectric function, clearly showing the influence of the stacking on the homostructure values and surprisingly proving that the correspondent bulk results can be used to reproduce the polytypism even in the limit we considered. PMID:27666092

  19. Activation energy and capture cross section of majority carrier traps in Zn doped InP

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Williams, Wendell

    1993-01-01

    Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

  20. Heteroepitaxial InP, and ultrathin, directly glassed, GaAs 3-5 solar cells

    NASA Technical Reports Server (NTRS)

    Hardingham, C. M.; Cross, T. A.

    1993-01-01

    The commercial application of Indium Phosphide solar cells in practical space missions is crucially dependent upon achieving a major cost reduction which could be offered by heteroepitaxy on cheaper, more rugged substrates. Furthermore, significant mass reduction, compatibility with mechanically stacked multijunction cells, and elimination of the current loss through glue discoloration, is possible in III-V solar cells by the development of ultrathin, directly glassed cells. The progress of a UK collaborative program to develop high efficiency, homojunction InP solar cells, grown by MOCVD on Si substrates, is described. Results of homoepitaxial cells (is greater than 17 percent 1 Sun AM0) are presented, together with progress in achieving low dislocation density heteroepitaxy. Also, progress in a UK program to develop ultrathin directly-glassed GaAs cells is described. Ultrathin (5 micron) GaAs cells, with 1 Sun AM0 efficiencies up to 19.1 percent, are presented, together with progress in achieving a direct (adhesive-less) bond between the cell and coverglass. Consequential development to, for example, cell grids, are also discussed.

  1. THz pulse emission from InAs-based epitaxial structures grown on InP substrates

    NASA Astrophysics Data System (ADS)

    Nevinskas, I.; Butkutė, R.; Stanionytė, S.; Bičiūnas, A.; Geižutis, A.; Krotkus, A.

    2016-11-01

    Undoped InAs and InAs p-n junction epitaxial layers were grown on (100)-cut InP substrates with molecular beam epitaxy. The lattice difference between the substrate and the InAs layers was matched with a graded AlInAs buffer layer. The alloy composition, structural characteristics and carrier mobility of the structures were determined from the high-resolution x-ray diffraction, atomic force microscopy and Hall-effect measurements, respectively. The optical parameters of the layers were characterized by the emission of terahertz (THz) pulses when the samples were illuminated with femtosecond laser pulses. It has been found that the built-in electric field in the p-n junction enhances the THz emission. Registering THz signals in the quasi-reflection direction, the p-n junction emits more intense radiation in comparison to an undoped bulk InAs. At excitation wavelengths >1.8 μm the InAs p-n junction provides stronger THz pulses than those from (111)-cut p-InAs, the best surface THz emitter known to date. The epitaxial layers were also exposed to a constant magnetic field from neodymium permanent magnets, which further enhances THz emission and allows registering THz radiation in the line-of-sight terahertz time-domain-spectroscopy geometry.

  2. Doping evaluation of InP nanowires for tandem junction solar cells.

    PubMed

    Lindelöw, F; Heurlin, M; Otnes, G; Dagytė, V; Lindgren, D; Hultin, O; Storm, K; Samuelson, L; Borgström, M

    2016-02-12

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  3. Doping evaluation of InP nanowires for tandem junction solar cells

    NASA Astrophysics Data System (ADS)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  4. Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1991-01-01

    Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.

  5. Fluoride dielectric films on InP for metal-insulator-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Paul, T. K.; Bose, D. N.

    1990-04-01

    This paper describes the characteristics of thin fluoride films on InP which are used as dielectric for metal-insulator-semiconductor (MIS) devices. Films of Ba1-xSrxF2 (x=0.0, 0.5, 0.83, and 1.0) were deposited by sublimation of mixtures of BaF2 and SrF2 in vacuum under 10-5 Torr pressure. The composition of the films was deduced from x-ray diffraction and energy dispersion analysis by x-ray studies. The electrical activation energies of the films determined between 120 and 300 K were found to be 3.5-22.0×10-3 eV , depending on composition and temperature. The resistivity of the films was in the range of 5.0×1011 to 5.0×1012 Ω cm with the breakdown fields greater than 5.0×105 V cm-1 . The interface state density obtained was as low as 5×1010 cm-2 eV-1 with annealed BaF2 films. Scanning electron microscope studies showed that annealing caused development of cracks resulting in decreased film resistivity. Auger studies gave evidence of broadening of the interface and outdiffusion from the substrate due to annealing.

  6. Micrometer-Thick Graphene Oxide-Layered Double Hydroxide Nacre-Inspired Coatings and Their Properties.

    PubMed

    Yan, You-Xian; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2016-02-10

    Robust, functional, and flame retardant coatings are attractive in various fields such as building construction, food packaging, electronics encapsulation, and so on. Here, strong, colorful, and fire-retardant micrometer-thick hybrid coatings are reported, which can be constructed via an enhanced layer-by-layer assembly of graphene oxide (GO) nanosheets and layered double hydroxide (LDH) nanoplatelets. The fabricated GO-LDH hybrid coatings show uniform nacre-like layered structures that endow them good mechanic properties with Young's modulus of ≈ 18 GPa and hardness of ≈ 0.68 GPa. In addition, the GO-LDH hybrid coatings exhibit nacre-like iridescence and attractive flame retardancy as well due to their well-defined 2D microstructures. This kind of nacre-inspired GO-LDH hybrid thick coatings will be applied in various fields in future due to their high strength and multifunctionalities.

  7. Test of non-Newtonian gravitational forces at micrometer range with two-dimensional force mapping

    NASA Astrophysics Data System (ADS)

    Wang, Jianbo; Guan, Shengguo; Chen, Kai; Wu, Wenjie; Tian, Zhaoyang; Luo, Pengshun; Jin, Aizi; Yang, Shanqing; Shao, Chenggang; Luo, Jun

    2016-12-01

    We report an isoelectronic test of non-Newtonian forces at micrometer range by sensing the lateral force between a gold sphere and a density modulation source mass using a soft cantilever. Two-dimensional (2D) force mapping, in combination with in situ topographic imaging, is applied to verify the isoelectronic property of the surface. The force signal is found to be electrostatic force dominated, which is correlated with the density modulation structure for thinner gold coating and reduced by thicker gold coating and thermal annealing. Maximum likelihood estimation is used to extract the constraint on the hypothetical force based on the 2D data, and the experiment sets a constraint on the Yukawa type forces without subtraction of the model dependent force background. This result would be a meaningful complementary to previous tests with different methods.

  8. 158 micrometers (CII) mapping of NGC 6946: Probing the atomic medium

    NASA Technical Reports Server (NTRS)

    Madden, S. C.; Geis, N.; Genzel, R.; Herrmann, F.; Jackson, J. M.; Poglitsch, A.; Stacey, G. J.; Townes, C. H.

    1992-01-01

    The strong 158 micrometers (C2) cooling line of the NGC 6946 galaxy is investigated. The data was acquired with a far infrared imaging Fabry-Perot interferometer with 55 minutes resolution. About 1 percent of the total far infrared luminosity of the galaxy is analyzed. The (C2) emission comes from a mizture of components of interstellar gas. The brightest emission is associated with the nucleus, a second component traces the spiral arms and the largest star forming/H2 regions contained within them, and a third extended component of low brightness can be detected at least 12 kpc from the nucleus. The nuclear and spiral arm components are most likely associated with dense photon dominated regions at molecular cloud surfaces that are exposed to ultraviolet radiation produced by young massive stars. The (C2) emission is analyzed and the cooling rate in the atomic medium is consistent with photoelectric heating by diffuse ultraviolet radiation.

  9. Pluto-Charon: Infrared Reflectance from 3.6 to 8.0 Micrometers

    NASA Technical Reports Server (NTRS)

    Cruikshank, Dale P.; Emery, Joshua P.; Stansberry, John A.; VanCleve, Jeffrey E.

    2004-01-01

    We have measured the spectral reflectance of the Pluto-Charon pair at 3.6, 4.5, 5.8, and 8.0 micrometers with the Infrared Array Camera (IRAC) (G. G. Fazzio et al. Ap.J.Supp. 154, 10-17, 2004) on the Spitzer Space Telescope (STS), at eight different longitudes that cover a full rotation of the planet. STS does not have sufficient resolution to separate the light from the planet and the satellite. The image of the Pluto-Charon pair is clearly visible at each of the four wavelengths. We will discuss the spectral reflectance in terms of models that include the known components of Pluto and Charon s surfaces, and evidence for diurnal variations.

  10. Imaging Nano- and Micrometer-sized Magnetic Insulator Devices in the Presence of Spin-Torque

    NASA Astrophysics Data System (ADS)

    Rosenberg, Aaron; Jermain, Colin; Nowack, Katja; Kirtley, John; Paik, Hanjong; Aradhya, Sriharsha; Wang, Hailong; Heron, John; Schlom, Darrell; Yang, Fengyuan; Ralph, Dan; Moler, Kathryn

    2015-03-01

    Recent results demonstrate that a giant spin-hall effect in Tantalum can produce large spin torques. We intend to employ this large spin torque to manipulate the magnetic moment in electrically insulating ferrimagnetic Lu3Fe5O12(LuIG)andY3Fe5O12 (YIG) devices. Using a scanning SQUID microscope, we can study the possibility of performing reversible switching between magnetic states of nano- and micrometer-sized iron garnet devices induced by current pulses applied to a Tantalum layer in contact with the devices by directly imaging the magnetic state of the device before and after a current pulse. Successful manipulation of magnetic insulators by electrical pulses can be a platform for magnetic memory devices and spintronics.

  11. Reversible self-assembly and directed assembly of DNA-linked micrometer-sized colloids.

    PubMed

    Valignat, Marie-Pierre; Theodoly, Olivier; Crocker, John C; Russel, William B; Chaikin, Paul M

    2005-03-22

    We present a technique for the directed assembly and self-assembly of micrometer-scale structures based on the control of specific DNA linkages between colloidal particles. The use of DNA links combined with polymer brushes provides an effective way to regulate the range and magnitude of addressable forces between pairs (and further combinations) of different particles. We demonstrate that the autoassembly of alternate microbeads as well as their directed assembly, by using laser tweezers, is reversible. The key to reversibility is preventing the particles from falling into their van der Waals well at close distances. This goal is achieved by the use of adsorbed polymers that limit the number of DNA bridges to one to three between adjacent particles.

  12. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    PubMed

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  13. Reactanceless synthesized impedance bandpass amplifier

    NASA Technical Reports Server (NTRS)

    Kleinberg, L. L. (Inventor)

    1985-01-01

    An active R bandpass filter network is formed by four operational amplifier stages interconnected by discrete resistances. One pair of stages synthesize an equivalent input impedance of an inductance (L sub eq) in parallel with a discrete resistance (R sub o) while the second pair of stages synthesizes an equivalent input impedance of a capacitance (C sub eq) serially coupled to another discrete resistance (R sub i) coupled in parallel with the first two stages. The equivalent input impedances aggregately define a tuned resonant bandpass filter in the roll-off regions of the operational amplifiers.

  14. 94-GHz MMIC CPW low-noise amplifier on InP

    NASA Astrophysics Data System (ADS)

    Dambrine, Gilles; Hoel, Virginie; Boret, Samuel; Grimbert, Bertrand; Bollaert, Sylvain; Wallart, Xavier; Lepilliet, Sylvie; Cappy, Alain

    1999-12-01

    High performances have been achieved at W-band with a 2- stage, 0.1 micrometers gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T- gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids equals 350 mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600 mS/mm and an intrinsic current gain cutoff frequency Fc equals 220 GHz. The extrinsic current gain cut-off frequency Ft is 175 GHz. The LNA shows a minimum noise figure of 3.3 dB with an associated gain of 11.5 dB at 94 GHz.

  15. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    SciTech Connect

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-09-25

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%.

  16. Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

    SciTech Connect

    Morales, F. M.; Garcia, R.; Molina, S. I.; Aouni, A.; Postigo, P. A.; Fonstad, C. G.

    2009-01-26

    The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that {approx}2 {mu}m thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.

  17. Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers

    SciTech Connect

    Hu, T.-C.; Chang, M.F.; Weimann, Nils; Chen Jianxin; Chen, Y.-K.

    2005-04-04

    We report on deep ion-implantation of sulfur into InP substrates to replace the epitaxial subcollector layer of double-heterojunction bipolar transistors. Using optimized implantation conditions of 350 keV energy and 1x10{sup 15} cm{sup -2} dose, we achieved a subcollector sheet resistance of 15 {omega}/square. Under well-controlled regrowth conditions a root-mean-square roughness of 12 A is measured from DHBT epitaxial layers grown on implanted InP substrates, comparable to DHBT epitaxial layers grown on n{sup +} epiready unimplanted substrates. We observe a pronounced increase in surface roughness of epitaxial layer beyond a threshold ion dose, depending on implantation energy. Large-area DHBT devices result with sulfur-ion implanted subcollector shows similar characteristics compared to devices fabricated on n{sup +}-doped InP substrates.

  18. Self-assembled InAs quantum wire lasers on (001)InP at 1.6 {mu}m

    SciTech Connect

    Suarez, F.; Fuster, D.; Gonzalez, L.; Gonzalez, Y.; Garcia, J. M.; Dotor, M. L.

    2006-08-28

    In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires (QWRs) as active zone and aluminum-free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP){sub 5}/(GaInAs){sub 4} lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get a uniform QWR distribution. Lasing emission is observed at a wavelength of {approx}1.66 {mu}m up to 270 K from 15x3000 {mu}m{sup 2} devices, with a threshold current density at that temperature of 2 kA/cm{sup 2}.

  19. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application

    NASA Astrophysics Data System (ADS)

    Alexandre, F.; Parillaud, O.; Nguyen, D. C.; Azoulay, R.; Quillec, M.; Bouchoule, S.; Le Mestreallan, G.; Juhel, M.; Le Roux, G.; Rao, E. V. K.

    1998-05-01

    The growth of both undoped and iron doped InP on planar as well as non-planar (0 0 1)InP substrates has been explored using low pressure hydride vapour phase epitaxy (LP-HVPE) in the temperature range of 500-620°C. Secondary ion mass spectroscopy (SIMS), X-ray diffraction and photoluminescence measurements have shown no drastic degradation in the crystal quality with decreasing growth temperature. The Fe incorporation in the layers is found to be independent of the substrate temperature ( Ts) and in all experiments semi-insulating InP : Fe layers with resistivities close to 10 9 Ω cm have been obtained. A perfect growth selectivity with no deposition on masked areas and a good planarized regrowth on mesas has been demonstrated even at low Ts.

  20. Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Goradia, Manju; Goradia, Chandra; Jenkins, Phillip; Jayne, Douglas; Weinberg, Irving

    1991-01-01

    Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.

  1. DNA damage on nano- and micrometer scales impacts dicentric induction: computer modelling of ion microbeam experiments

    NASA Astrophysics Data System (ADS)

    Friedland, Werner; Kundrat, Pavel; Schmitt, Elke

    2016-07-01

    Detailed understanding of the enhanced relative biological effectiveness (RBE) of ions, in particular at high linear energy transfer (LET) values, is needed to fully explore the radiation risk of manned space missions. It is generally accepted that the enhanced RBE of high-LET particles results from the DNA lesion patterns, in particular DNA double-strand breaks (DSB), due to the spatial clustering of energy deposits around their trajectories. In conventional experiments on biological effects of radiation types of diverse quality, however, clustering of energy deposition events on nanometer scale that is relevant for the induction and local complexity of DSB is inherently interlinked with regional (sub-)micrometer-scale DSB clustering along the particle tracks. Due to this limitation, the role of both (nano- and micrometer) scales on the induction of diverse biological endpoints cannot be frankly separated. To address this issue in a unique way, experiments at the ion microbeam SNAKE [1] and corresponding track-structure based model calculations of DSB induction and subsequent repair with the biophysical code PARTRAC [2] have been performed. In the experiments, hybrid human-hamster A_{L} cells were irradiated with 20 MeV (2.6 keV/μm) protons, 45 MeV (60 keV/μm) lithium ions or 55 MeV (310 keV/μm) carbon ions. The ions were either quasi-homogeneously distributed or focused to 0.5 x 1 μm^{2} spots on regular matrix patterns of 5.4 μm, 7.6 μm and 10.6 μm grid size, with pre-defined particle numbers per spot so as to deposit a mean dose of 1.7 Gy for all irradiation patterns. As expected, the induction of dicentrics by homogeneous irradiation increased with LET: lithium and carbon ions induced about two- and four-fold higher yields of dicentrics than protons. The induction of dicentrics is, however, affected by µm-scale, too: focusing 20 lithium ions or 451 protons per spot on a 10.6 μm grid induced two or three times more dicentrics, respectively, than a

  2. High-Resolution IR Absorption Spectroscopy of Polycyclic Aromatic Hydrocarbons in the 3-micrometers Region: Role of Periphery

    NASA Technical Reports Server (NTRS)

    Maltseva, Elena; Petrignani, Annemieke; Candian, Alessandra; Mackie, Cameron J.; Huang, Xinchuan; Lee, Timothy J.; Tielens, Alexander G. G. M.; Oomens, Jos; Buma, Wybren Jan

    2017-01-01

    In this work we report on high-resolution IR absorption studies that provide a detailed view on how the peripheral structure of irregular polycyclic aromatic hydrocarbons (PAHs) affects the shape and position of their 3-micrometers absorption band. To this purpose we present mass-selected, high-resolution absorption spectra of cold and isolated phenanthrene, pyrene, benz[a]antracene, chrysene, triphenylene, and perylene molecules in the 2950-3150 per cm range. The experimental spectra are compared with standard harmonic calculations, and anharmonic calculations using a modified version of the SPECTRO program that incorporates a Fermi resonance treatment utilizing intensity redistribution. We show that the 3-micrometers region is dominated by the effects of anharmonicity, resulting in many more bands than would have been expected in a purely harmonic approximation. Importantly, we find that anharmonic spectra as calculated by SPECTRO are in good agreement with the experimental spectra. Together with previously reported high-resolution spectra of linear acenes, the present spectra provide us with an extensive dataset of spectra of PAHs with a varying number of aromatic rings, with geometries that range from open to highly-condensed structures, and featuring CH groups in all possible edge configurations. We discuss the astrophysical implications of the comparison of these spectra on the interpretation of the appearance of the aromatic infrared 3-micrometers band, and on features such as the two-component emission character of this band and the 3-micrometers emission plateau.

  3. Discovery of natural gain amplification in the 10-micrometer carbon dioxide laser bands on Mars - A natural laser

    NASA Technical Reports Server (NTRS)

    Mumma, M. J.; Buhl, D.; Chin, G.; Deming, D.; Espenak, F.; Kostiuk, T.; Zipoy, D.

    1981-01-01

    Fully resolved intensity profiles of various lines in the carbon dioxide band at 10.4 micrometers have been measured on Mars with an infrared heterodyne spectrometer. Analysis of the line shapes shows that the Mars atmosphere exhibits positive gain in these lines. The detection of natural optical gain amplification enables identification of these lines as a definite natural laser.

  4. Opto-mechanical subsystem of a 10 micrometer wavelength receiver terminal. Waveguide laser local oscillator. Servo system

    NASA Technical Reports Server (NTRS)

    1975-01-01

    An engineering model opto-mechanical subsystem for a 10.6-micrometer laser heterodyne receiver is developed, and a CO2 waveguide local oscillator and servo electronics are provided for the receiver. Design goals are presented for the subsystems and overall package design is described. Thermal and mechanical distortion loading tests were performed and the results are included.

  5. Infrared receivers for low background astronomy: Incoherent detectors and coherent devices from one micrometer to one millimeter

    NASA Technical Reports Server (NTRS)

    Boggess, N. W.; Greenberg, L. T.; Hauser, M. G.; Houck, J. R.; Low, F. J.; Mccreight, C. R.; Rank, D. M.; Richards, P. L.; Weiss, R.

    1979-01-01

    The status of incoherent detectors and coherent receivers over the infrared wavelength range from one micrometer to one millimeter is described. General principles of infrared receivers are included, and photon detectors, bolometers, coherent receivers, and important supporting technologies are discussed, with emphasis on their suitability for low background astronomical applications. Broad recommendations are presented and specific opportunities are identified for development of improved devices.

  6. Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

  7. Progress in p(+)n InP solar cells fabricated by thermal diffusion

    NASA Technical Reports Server (NTRS)

    Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Weinberg, I.; Fatemi, N. S.; Vargas-Aburto, Carlos; Goradia, C.; Goradia, Manju

    1992-01-01

    In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

  8. ESTIMATING THE STRENGTH OF SINGLE-ENDED DISLOCATION SOURCES IN MICROMETER-SIZED SINGLE CRYSTALS

    SciTech Connect

    Rao, S I; Dimiduk, D M; Tang, M; Parthasarathy, T A; Uchic, M D; Woodward, C

    2007-05-03

    A recent study indicated that the behavior of single-ended dislocation sources contributes to the flow strength of micrometer-scale crystals. In this study 3D discrete dislocation dynamics simulations of micrometer-sized volumes are used to calculate the effects of anisotropy of dislocation line tension (increasing Poisson's ratio, {nu}) on the strength of single-ended dislocation sources and, to compare them with the strength of double-ended sources of equal length. This is done by directly modeling their plastic response within a 1 micron cubed FCC Ni single crystal using DDS. In general, double-ended sources are stronger than single-ended sources of an equal length and exhibit no significant effects from truncating the long-range elastic fields at this scale. The double-ended source strength increases with Poisson ratio ({nu}), exhibiting an increase of about 50% at u = 0.38 (value for Ni) as compared to the value at {nu} = 0. Independent of dislocation line direction, for {nu} greater than 0.20, the strengths of single-ended sources depend upon the sense of the stress applied. The value for {alpha}, in the expression for strength, {tau} = {alpha}(L){micro}b/L is shown to vary from 0.4 to 0.84 depending upon the character of the dislocation and the direction of operation of the source at {nu} corresponding to that of Ni, 0.38 and a length of 933b. By varying the lengths of the sources from 933b to 233b, it was shown that the scaling of the strength of single-ended and double-ended sources with their length both follow a ln(L/b)/(L/b) dependence. Surface image stresses are shown to have little effect on the critical stress of single-ended sources at a length of {approx}250b or greater. The relationship between these findings and a recent statistical model for the hardening of small volumes is also discussed.

  9. Thin films of InP for photovoltaic energy conversion. Third quarterly technical progress report, December 29, 1979-March 28, 1980

    SciTech Connect

    Manasevit, H M; Ruth, R P; Moudy, L A; Yang, J J.J.; Johnson, R E

    1980-04-01

    A research study is being conducted for the purpose of developing a low-cost high-efficiency thin-film InP heterojunction solar cell based on InP films grown by the metalorganic chemical vapor deposition (MO-CVD) process on suitable substrates. Heterostructure devices of CdS/InP (and possibly indium tin oxide/InP) are to be prepared at Stanford University under subcontract, using the MO-CVD InP films grown at Rockwell. The work of the third quarter of the program is summarized. Experiments continued on evaluation of GaP as an intermediate layer material for subsequent growth of InP films on various substrate materials, and Cd (obtained from dimethylcadmium) was evaluated as a p-type dopant (an alternative to Zn obtained from diethylzinc) for InP films made by the MO-CVD process. A preliminary x-ray diffraction analysis was conducted of the crystallographic structure of the vacuum-deposited CdS films prepared at Stanford as part of the process of fabricating CdS/InP heterojunction solar cells. A group of CdS/InP heterostructure cells involving vacuum-deposited CdS and p-type epitaxial InP films grown by MO-CVD was prepared and evaluated. High J/sub 0/ values and low fill factors were observed in all of the cells, resulting in AM1.5 efficiencies in the 2 to 5 percent range. (WHK)

  10. Information Retrieval for Ecological Syntheses

    ERIC Educational Resources Information Center

    Bayliss, Helen R.; Beyer, Fiona R.

    2015-01-01

    Research syntheses are increasingly being conducted within the fields of ecology and environmental management. Information retrieval is crucial in any synthesis in identifying data for inclusion whilst potentially reducing biases in the dataset gathered, yet the nature of ecological information provides several challenges when compared with…

  11. Method of synthesizing pyrite nanocrystals

    DOEpatents

    Wadia, Cyrus; Wu, Yue

    2013-04-23

    A method of synthesizing pyrite nanocrystals is disclosed which in one embodiment includes forming a solution of iron (III) diethyl dithiophosphate and tetra-alkyl-ammonium halide in water. The solution is heated under pressure. Pyrite nanocrystal particles are then recovered from the solution.

  12. Laboratory Syntheses of Insect Pheromones.

    ERIC Educational Resources Information Center

    Cormier, Russell A.; Hoban, James N.

    1984-01-01

    Provides background information and procedures for the multi-step synthesis of tiger moth and boll weevil pheromones (sex attractants). These syntheses require several laboratory periods. The tiger moth pheromone synthesis is suitable for introductory organic chemistry while the boll weevil pheromone is recommended for an advanced laboratory…

  13. Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, X. Y.; Wang, K.; Pan, W. W.; Wang, P.; Li, Y. Y.; Song, Y. X.; Gu, Y.; Yue, L.; Xu, H.; Zhang, Z. P.; Cui, J.; Gong, Q.; Wang, S. M.

    2015-09-01

    The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.

  14. Measurement of the minority carrier diffusion length and edge surface-recombination velocity in InP

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Hakimzadeh, Roshanak

    1993-01-01

    A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L(sub n)) and the edge surface-recombination velocity (V(sub s)) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure V(sub s), and these values were used in a theoretical expression for normalized EBIC. A fit of the experimental data with this expression enabled us to determine L(sub n).

  15. The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

    SciTech Connect

    Huang, J. Y.; Ponce, F. A.; Caldas, P. G.; Prioli, R.; Almeida, C. M.

    2013-11-28

    The microstructure of (001) InP crystals scratched with a sharp diamond tip depends strongly on the scratching direction. The scratch surface is found to conform to the radius of curvature of the tip (∼60 nm) by the formation of atomic crystal steps produced by dislocation glide along (111) planes. 〈110〉 scratches lead to coherent local crystal lattice movement and rotation causing deep dislocation propagation into the crystal and irregular pileups at the sides of the scratch surface. 〈100〉 scratches lead to incoherent lattice movement causing dislocation locking that inhibits their propagation and results in regular pileups.

  16. Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing of the performance of InP solar cells. For carrier removal, the number of holes trapped per defect is obtained from measurements of both carrier concentrations and defect concentrations during an isochronal anneal. In addition, from kinetic considerations, the behavior of the dominant defect during injection annealing is used to estimate the degradation expected from exposure to the ambient electron environment in geostationary orbit.

  17. Morphology, luminescence, and electrical resistance response to H 2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    NASA Astrophysics Data System (ADS)

    Volciuc, O.; Monaico, E.; Enachi, M.; Ursaki, V. V.; Pavlidis, D.; Popa, V.; Tiginyanu, I. M.

    2010-11-01

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 × 10 17 cm -3 and 1 × 10 18 cm -3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H 2 and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  18. Laue-DIC: a new method for improved stress field measurements at the micrometer scale

    PubMed Central

    Petit, J.; Castelnau, O.; Bornert, M.; Zhang, F. G.; Hofmann, F.; Korsunsky, A. M.; Faurie, D.; Le Bourlot, C.; Micha, J. S.; Robach, O.; Ulrich, O.

    2015-01-01

    A better understanding of the effective mechanical behavior of polycrystalline materials requires an accurate knowledge of the behavior at a scale smaller than the grain size. The X-ray Laue microdiffraction technique available at beamline BM32 at the European Synchrotron Radiation Facility is ideally suited for probing elastic strains (and associated stresses) in deformed polycrystalline materials with a spatial resolution smaller than a micrometer. However, the standard technique used to evaluate local stresses from the distortion of Laue patterns lacks accuracy for many micromechanical applications, mostly due to (i) the fitting of Laue spots by analytical functions, and (ii) the necessary comparison of the measured pattern with the theoretical one from an unstrained reference specimen. In the present paper, a new method for the analysis of Laue images is presented. A Digital Image Correlation (DIC) technique, which is essentially insensitive to the shape of Laue spots, is applied to measure the relative distortion of Laue patterns acquired at two different positions on the specimen. The new method is tested on an in situ deformed Si single-crystal, for which the prescribed stress distribution has been calculated by finite-element analysis. It is shown that the new Laue-DIC method allows determination of local stresses with a strain resolution of the order of 10−5. PMID:26134802

  19. Isotope ratio analysis of individual sub-micrometer plutonium particles with inductively coupled plasma mass spectrometry.

    PubMed

    Esaka, Fumitaka; Magara, Masaaki; Suzuki, Daisuke; Miyamoto, Yutaka; Lee, Chi-Gyu; Kimura, Takaumi

    2010-12-15

    Information on plutonium isotope ratios in individual particles is of great importance for nuclear safeguards, nuclear forensics and so on. Although secondary ion mass spectrometry (SIMS) is successfully utilized for the analysis of individual uranium particles, the isobaric interference of americium-241 to plutonium-241 makes difficult to obtain accurate isotope ratios in individual plutonium particles. In the present work, an analytical technique by a combination of chemical separation and inductively coupled plasma mass spectrometry (ICP-MS) is developed and applied to isotope ratio analysis of individual sub-micrometer plutonium particles. The ICP-MS results for individual plutonium particles prepared from a standard reference material (NBL SRM-947) indicate that the use of a desolvation system for sample introduction improves the precision of isotope ratios. In addition, the accuracy of the (241)Pu/(239)Pu isotope ratio is much improved, owing to the chemical separation of plutonium and americium. In conclusion, the performance of the proposed ICP-MS technique is sufficient for the analysis of individual plutonium particles.

  20. IR and green femtosecond laser machining of heat sensitive materials for medical devices at micrometer scale

    NASA Astrophysics Data System (ADS)

    Stolberg, Klaus; Friedel, Susanna; Kremser, Bert; Roehner, Markus

    2014-03-01

    In medical device manufacturing there is an increasing interest to enhance machining of biocompatible materials on a micrometer scale. Obviously there is a trend to generate smaller device structures like cavities, slits or total size of the device to address new applications. Another trend points to surface modification, which allows controlling selective growth of defined biological cell types on medical implants. In both cases it is interesting to establish machining methods with minimized thermal impact, because biocompatible materials often show degradation of mechanical properties under thermal treatment. Typical examples for this effect is embrittlement of stainless steel at the edge of a cutting slit, which is caused by oxidation and phase change. Also for Nitinol (NiTi alloy) which is used as another stent material reduction of shape-memory behavior is known if cutting temperature is too high. For newest biodegradable materials like Polylactic acid (PLA) based polymers, lowest thermal impact is required due to PLA softening point (65°C) and melting temperature (~170 °C ). Laser machining with ultra-short pulse lasers is a solution for this problem. In our work we demonstrate a clean laser cut of NiTi and PLA based polymers with a high repetition-rate 1030 nm, 400-800 fs laser source at a pulse energy of up to 50 μJ and laser repetition rate of up to 500 kHz.

  1. Smoothness improvement of micrometer- and submicrometer-thick nanocrystalline diamond films produced by MWPECVD

    NASA Astrophysics Data System (ADS)

    Cicala, G.; Magaletti, V.; Senesi, G. S.; Tamborra, M.

    2013-04-01

    Thick (around 3 μm) and thin (48-310 nm) nanocrystalline diamond (NCD) films have been produced from Ar-rich CH4/Ar/H2 (1/89/10 %) and H2-rich CH4/H2 (1/99 %) microwave plasmas, respectively. The deposition rate and the nucleation enhancement have been monitored in situ and in real time by pyrometric and laser reflectance interferometry for micrometer- and nanometer-thick films. For thick films, an improvement of the NCD films' smoothness has been obtained by a buffer layer between the films and the treated Si substrate. For thin films, a combinatorial approach, i.e., a treatment of the Si substrate in a suspension of mixed diamond powders of 250 nm and 40-60 μm, has been utilized. The present experimental results show that the buffer layer procedure allows good preservation of the surface of the treated Si substrate and the combinatorial approach promotes effectively the seeding of the Si surface.

  2. The 1.06 micrometer wideband laser modulator: Fabrication and life testing

    NASA Technical Reports Server (NTRS)

    Teague, J. R.

    1975-01-01

    The design, fabrication, testing and delivery of an optical modulator which will operate with a mode-locked Nd:YAG laser at 1.06 micrometers were performed. The system transfers data at a nominal rate of 400 Mbps. This wideband laser modulator can transmit either Pulse Gated Binary Modulation (PGBM) or Pulse Polarization Binary Modulation (PPBM) formats. The laser beam enters the modulator and passes through both crystals; approximately 1% of the transmitted beam is split from the main beam and analyzed for the AEC signal; the remaining part of the beam exits the modulator. The delivered modulator when initially aligned and integrated with laser and electronics performed very well. The optical transmission was 69.5%. The static extinction ratio was 69:1. A 1000 hour life test was conducted with the delivered modulator. A 63 bit pseudorandom code signal was used as a driver input. At the conclusion of the life test the modulator optical transmission was 71.5% and the static extinction ratio 65:1.

  3. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    NASA Astrophysics Data System (ADS)

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.

  4. Constraints on Exotic Dipole-Dipole Couplings between Electrons at the Micrometer Scale

    NASA Astrophysics Data System (ADS)

    Kotler, Shlomi; Ozeri, Roee; Kimball, Derek F. Jackson

    2015-08-01

    New constraints on exotic dipole-dipole interactions between electrons at the micrometer scale are established, based on a recent measurement of the magnetic interaction between two trapped 88Sr+ ions. For light bosons (mass≤0.1 eV ) we obtain a 90% confidence interval for an axial-vector-mediated interaction strength of |gAegAe/4 π ℏc | ≤1.2 ×10-17 . Assuming C P T invariance, this constraint is compared to that on anomalous electron-positron interactions, derived from positronium hyperfine spectroscopy. We find that the electron-electron constraint is 6 orders of magnitude more stringent than the electron-positron counterpart. Bounds on pseudoscalar-mediated interaction as well as on torsion gravity are also derived and compared with previous work performed at different length scales. Our constraints benefit from the high controllability of the experimental system which contained only two trapped particles. It therefore suggests a useful new platform for exotic particle searches, complementing other experimental efforts.

  5. Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

    NASA Technical Reports Server (NTRS)

    Bratt, P. R.; Lewis, N. N.

    1976-01-01

    Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

  6. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    DOE PAGES

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; ...

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzagmore » directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. Lastly, the correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.« less

  7. Application of sub-micrometer patterned permalloy thin film in tunable radio frequency inductors

    SciTech Connect

    Rahman, B.M. Farid; Divan, Ralu; Rosenmann, Daniel; Wang, Tengxing; Peng, Yujia; Wang, Guoan

    2015-01-01

    Electrical tunable meander line inductor using coplanar waveguide structures with patterned permalloy (Py) thin film has been designed and implemented in this paper. High resistivity Si substrate is used to reduce the dielectric loss from the substrate. Inductor is implemented with a 60 nm thick Py deposited and patterned on top of the gold meander line, and Py film is patterned with dimension of 440 nm 10 lm to create the shape anisotropy field, which in turn increases the FMR frequency. Compared to a regular meanderline inductor without the application of sub-micrometer patterned Py thin film, the inductance density has been increased to 20% for the implemented inductor with patterned Py. Measured FMR frequency of the patterned Py is 4.51 GHz without the application of any external magnetic field. This has enabled the inductor application in the practical circuit boards, where the large external magnet is unavailable. Inductance tunability of the implemented inductor is demonstrated by applying a DC current. Applied DC current creates a magnetic field along the hard axis of the patterned Py thin film, which changes the magnetic moment of the thin film and thus, decreases the inductance of the line. Measured results show that the inductance density of the inductor can be varied 5% by applying 300 mA DC current, larger inductance tunability is achievable by increasing the thickness of Py film. VC 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4918766

  8. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    PubMed Central

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-01-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene. PMID:25434431

  9. A Rotating Coil Apparatus with Sub-Micrometer Magnetic Center Measurement Stability

    SciTech Connect

    Spencer, Cherrill M.; Anderson, Scott, D.; Jensen, David R.; Wolf, Zachary R.; /SLAC

    2005-12-02

    A rotating double coil apparatus has been designed and built so that the relative magnetic center change of a quadrupole is measured to an uncertainty smaller than 0.02 micrometers (=micron, {micro}m) for a single measurement. Furthermore, repeated measurements over about an hour vary by less than 0.1 {micro}m and by less than 1 {micro}m for periods of 24 hrs or longer. Correlation analyses of long data runs show that the magnet center measurement is sensitive to mechanical effects, such as vibration and rotating part wear, as well as to environmental effects, such as temperature and relative humidity. Evolving apparatus design has minimized mechanical noise and environmental isolation has reduced the effects of the surrounding environment so that sub-micron level measurement uncertainties and micron level stability have been achieved for multi-day measurement periods. Apparatus design evolution will be described in detail and correlation data taken on water-cooled electromagnet and adjustable permanent quadrupoles, which are about 350 mm in overall length, will be shown. These quads were prototypes for the linac quads of the Next Linear Collider (NLC) that had to meet the requirement that their magnetic centers change less than 1 micron during a 20% change in field strength. Thus it was necessary to develop an apparatus that could track the magnetic center with a fraction of a micron uncertainty.

  10. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    SciTech Connect

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. Lastly, the correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.

  11. A simple indentation device for measuring micrometer-scale tissue stiffness

    NASA Astrophysics Data System (ADS)

    Levental, I.; Levental, K. R.; Klein, E. A.; Assoian, R.; Miller, R. T.; Wells, R. G.; Janmey, P. A.

    2010-05-01

    Mechanical properties of cells and extracellular matrices are critical determinants of function in contexts including oncogenic transformation, neuronal synapse formation, hepatic fibrosis and stem cell differentiation. The size and heterogeneity of biological specimens and the importance of measuring their mechanical properties under conditions that resemble their environments in vivo present a challenge for quantitative measurement. Centimeter-scale tissue samples can be measured by commercial instruments, whereas properties at the subcellular (nm) scale are accessible by atomic force microscopy, optical trapping, or magnetic bead microrheometry; however many tissues are heterogeneous on a length scale between micrometers and millimeters which is not accessible to most current instrumentation. The device described here combines two commercially available technologies, a micronewton resolution force probe and a micromanipulator for probing soft biological samples at sub-millimeter spatial resolution. Several applications of the device are described. These include the first measurement of the stiffness of an intact, isolated mouse glomerulus, quantification of the inner wall stiffness of healthy and diseased mouse aortas, and evaluation of the lateral heterogeneity in the stiffness of mouse mammary glands and rat livers with correlation of this heterogeneity with malignant or fibrotic pathology as evaluated by histology.

  12. Large increase in fracture resistance of stishovite with crack extension less than one micrometer

    PubMed Central

    Yoshida, Kimiko; Wakai, Fumihiro; Nishiyama, Norimasa; Sekine, Risako; Shinoda, Yutaka; Akatsu, Takashi; Nagoshi, Takashi; Sone, Masato

    2015-01-01

    The development of strong, tough, and damage-tolerant ceramics requires nano/microstructure design to utilize toughening mechanisms operating at different length scales. The toughening mechanisms so far known are effective in micro-scale, then, they require the crack extension of more than a few micrometers to increase the fracture resistance. Here, we developed a micro-mechanical test method using micro-cantilever beam specimens to determine the very early part of resistance-curve of nanocrystalline SiO2 stishovite, which exhibited fracture-induced amorphization. We revealed that this novel toughening mechanism was effective even at length scale of nanometer due to narrow transformation zone width of a few tens of nanometers and large dilatational strain (from 60 to 95%) associated with the transition of crystal to amorphous state. This testing method will be a powerful tool to search for toughening mechanisms that may operate at nanoscale for attaining both reliability and strength of structural materials. PMID:26051871

  13. TSS-Thermal Synthesizer System

    NASA Technical Reports Server (NTRS)

    Chimenti, Edward; Rickman, Steven; Vogt, Robert; Longo, Carlos R. Ortiz; Bauman, Noel; Lepore, Joseph; Mackey, Phil; Pavlovsky, James, II; Welch, Mark; Fogerson, Peter; Dawber, Mark; Fong, Cynthia Jone; Hecke, Peter; Morrison, Susan; Castillo, Ernie; Chou, ZU; Fried, Lawrence; Howard, Jerry; Lombardi, Mike; Middleton, Jack

    1996-01-01

    Thermal Synthesizer System (TSS) is integrated set of thermal-analysis application programs designed to solve problems encountered by thermal engineers. Combines functionality of Systems Improved Numerical Differencing Analyzer/Fluid Integrator (SINDA/FLUINT) and radiation analysis with friendly and easily understood user-interface environment coupled with powerful interactive color graphics and geometric modeling capability. Enables thermal engineers to spend more time solving engineering problems instead of laboriously constructing and verifying math models. Written in FORTRAN and C language.

  14. Catalytic method for synthesizing hydrocarbons

    DOEpatents

    Sapienza, R.S.; Sansone, M.J.; Slegeir, W.A.R.

    A method for synthesizing hydrocarbons from carbon monoxide and hydrogen by contacting said gases with a slurry of a catalyst composed of palladium or platinum and cobalt supported on a solid phase is disclosed. The catalyst is prepared by heating a heterogeneous component of the palladium or platinum deposited on the solid support in a solution of cobalt carbonyl or precursors thereof. The catalyst exhibits excellent activity, stability in air, and produces highly desirable product fractions even with dilute gaseous reactants.

  15. Catalytic method for synthesizing hydrocarbons

    DOEpatents

    Sapienza, Richard S.; Sansone, Michael J.; Slegeir, William A. R.

    1984-01-01

    A method for synthesizing hydrocarbons from carbon monoxide and hydrogen by contacting said gases with a slurry of a catalyst composed of palladium or platinum and cobalt supported on a solid phase is disclosed. The catalyst is prepared by heating a heterogeneous component of the palladium or platinum deposited on the solid support in a solution of cobalt carbonyl or precursors thereof. The catalyst exhibits excellent activity, stability in air, and produces highly desirable product fractions even with dilute gaseous reactants.

  16. Stereoselective Syntheses of Soman Analog

    DTIC Science & Technology

    1993-04-28

    AD-A283 855 AD_ _ _ _ CONTRACT NO: DAMDl7-88-C-8021 0 / TITLE: STEREOSELECTIVE SYNTHESES OF SOMAN ANALOG SUBTITLE: Synthesis of Pentacoordinate...SUPPLEMENTARY NOTES SUBTITLE: Synthesis of Pentacoordinate Phosphorus Compounds, "Bait and Switch" Compounds, and Soman Simulants as Hapten. for Production of...simulant. We reporit a detailed study on the synthesis , isolation and characterization of the four pure enantiomners; of [(S or R)-4 -amino-2,2-diniethyl-2

  17. Method for synthesizing powder materials

    DOEpatents

    Buss, R.J.; Ho, P.

    1988-01-21

    A method for synthesizing ultrafine powder materials, for example, ceramic and metal powders, comprises admitting gaseous reactants from which the powder material is to be formed into a vacuum reaction chamber maintained at a pressure less than atmospheric and at a temperature less than about 400/degree/K (127/degree/C). The gaseous reactants are directed through a glow discharge provided in the vacuum reaction chamber to form the ultrafine powder material. 1 fig.

  18. Electrical and optical properties of InP nanowire ensemble p⁺-i-n⁺ photodetectors.

    PubMed

    Pettersson, Håkan; Zubritskaya, Irina; Nghia, Ngo Tuan; Wallentin, Jesper; Borgström, Magnus T; Storm, Kristian; Landin, Lars; Wickert, Peter; Capasso, Federico; Samuelson, Lars

    2012-04-06

    We report on a comprehensive study of electrical and optical properties of efficient near-infrared p⁺-i-n⁺ photodetectors based on large ensembles of self-assembled, vertically aligned i-n⁺ InP nanowires monolithically grown on a common p⁺ InP substrate without any buffer layer. The nanowires have a polytype modulated crystal structure of wurtzite and zinc blende. The electrical data display excellent rectifying behavior with an ideality factor of about 2.5 at 300 K. The ideality factor scales with 1/T, which possibly reflects deviations from classical transport models due to the mixed crystal phase of the nanowires. The observed dark leakage current is of the order of merely ∼100 fA/nanowire at 1 V reverse bias. The detectors display a linear increase of the photocurrent with reverse bias up to about 10 pA/nanowire at 5 V. From spectrally resolved measurements, we conclude that the photocurrent is primarily generated by funneling photogenerated carriers from the substrate into the NWs. Contributions from direct excitation of the NWs become increasingly important at low temperatures. The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires.

  19. Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam

    NASA Astrophysics Data System (ADS)

    Ribeiro-Andrade, R.; Malachias, A.; Miquita, D. R.; Vasconcelos, T. L.; Kawabata, R.; Pires, M. P.; Souza, P. L.; Rodrigues, W. N.

    2017-03-01

    This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from 1015 to 1016 Ga+/cm2 were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.

  20. InGaP-based InP quantum dot solar cells with extended optical absorption range

    NASA Astrophysics Data System (ADS)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2017-04-01

    In the quest for an efficient optical absorption of broad-band solar irradiation, intermediate-band solar cells composed of wide-bandgap semiconductors have attracted attention. In the present study, we developed and investigated the performance of wide-bandgap InGaP-based InP quantum dot (QD) solar cells. The solar cells were fabricated by solid-source molecular beam epitaxy, and their optical absorption range was found to be up to ∼850 nm, which is larger than the ∼680 nm optical absorption range of the host InGaP solar cells. Through the measurements of the voltage-dependent quantum efficiency, the photocarriers generated in the InGaP host were determined to be captured into the InP QDs, rather than expelled from the solar cells. The findings of this study highlight the need for the development of an optimized structure of intermediate-band solar cells to mitigate the capture of the photocarriers.

  1. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S

    SciTech Connect

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si[sub Ga] shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  2. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

    1997-07-01

    Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

  3. Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Chatterjee, B.

    2004-01-01

    Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

  4. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results.

    PubMed

    Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro

    2014-05-16

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  5. HD 172555: Detection of 63 micrometers [OI] Emission in a Debris Disc

    NASA Technical Reports Server (NTRS)

    Riviere-Marichalar, P.; Barrado, D.; Augereau, J. -C.; Thi, W. F.; Roberge, A.; Eiroa, C.; Montesinos, B.; Meeus, G.; Howard, C.; Sandell, G.; Duchene, G.; Dent, W. R. F.; Lebreton, J.; Mendigutia, I.; Huelamo, N.; Menard, F.; Pinte, C.

    2012-01-01

    Context. HD 172555 is a young A7 star belonging to the Beta Pictoris Moving Group that harbours a debris disc. The Spitzer IRS spectrum of the source showed mid-IR features such as silicates and glassy silica species, indicating the presence of a warm dust component with small grains, which places HD 172555 among the small group of debris discs with such properties. The IRS spectrum also shows a possible emission of SiO gas. Aims. We aim to study the dust distribution in the circumstellar disc of HD 172555 and to asses the presence of gas in the debris disc. Methods. As part of the GASPS Open Time Key Programme, we obtained Herschel-PACS photometric and spectroscopic observations of the source. We analysed PACS observations of HD 172555 and modelled the Spectral Energy Distribution (SED) with a modified blackbody and the gas emission with a two-level population model with no collisional de-excitation. Results. We report for the first time the detection of [OI] atomic gas emission at 63.18 micrometers in the HD 172555 circumstellar disc.We detect excesses due to circumstellar dust toward HD 172555 in the three photometric bands of PACS (70, 100, and 160 m). We derive a large dust particle mass of (4.8 plus-minus 0.6)x10(exp -4) Mass compared to Earth and an atomic oxygen mass of 2.5x10(exp -2)R(exp 2) Mass compared to Earth, where R in AU is the separation between the star and the inner disc. Thus, most of the detected mass of the disc is in the gaseous phase.

  6. Ultraviolet illuminated molecular cloud boundaries: Extended (C II) 158 micrometer emission toward L1630

    NASA Technical Reports Server (NTRS)

    Jaffe, D. T.; Zhou, S.; Howe, J. E.; Herrmann, F.; Madden, S. C.; Poglitsch, A.; Vanderwerf, P. P.; Stacey, G. J.

    1994-01-01

    The construction of a large scale map of the 158 micrometer C+ line toward the L1630/Orion B molecular cloud, covering an approximately 35' by 45' area which includes the NGC 2024 H II region, zeta-Ori, the reflection nebula NGC 2023, and the Horsehead nebula, is reported. Emission in the C II line is very widespread. The line was detected at levels in excess of a few 0.0001 erg/sq cm/s/sr over almost the entire mapped region. Extended emission associated with the NGC 2024 H II region and its envelope accounts for more than half of the C II flux. Over this approximately 1.5 by 2.5 pc region, the amount of gas phase carbon in the form of C+ is comparable to the amount of carbon in CO. This result, together with the C II distribution implies that C II emission arises on the surface of clumps throughout the cloud rather than in a single layer at the H II region boundary. Away from the H II region, most of the C II emission comes from the western edge of the L1630 cloud and probably results from excitation by external OB stars. The overall extent of the C II emission is comparable to that of millimeter molecular lines but the distributions are different in detail. The difference in C II and molecular line distributions, in particular, the larger extent of the C II emission west of NGC 2024 implies large variations in the ratio of the C II and J = 1 towards 0 intensities. Models of photon dominated regions can explain the relation between C II and CO intensities only if the cloud edges and cloud interior are considered separately. A method for using C II and radio continuum emission to characterize the relationship between OB stars and photon dominated regions is proposed.

  7. Implications for clinical treatment from the micrometer site dosimetric calculations in boron neutron capture therapy.

    PubMed

    Nichols, Trent L; Kabalka, George W; Miller, Laurence F; McCormack, Michael T; Johnson, Andrew

    2009-07-01

    Boron neutron capture therapy has now been used for several malignancies. Most clinical trials have addressed its use for the treatment of glioblastoma multiforme. A few trials have focused on the treatment of malignant melanoma with brain metastases. Trial results for the treatment of glioblastoma multiforme have been encouraging, but have not achieved the success anticipated. Results of trials for the treatment of malignant melanoma have been very promising, though with too few patients for conclusions to be drawn. Subsequent to these trials, regimens for undifferentiated thyroid carcinoma, hepatic metastases from adenocarcinoma of the colon, and head and neck malignancies have been developed. These tumors have also responded well to boron neutron capture therapy. Glioblastoma is an infiltrative tumor with distant individual tumor cells that might create a mechanism for therapeutic failure though recurrences are often local. The microdosimetry of boron neutron capture therapy can provide an explanation for this observation. Codes written to examine the micrometer scale energy deposition in boron neutron capture therapy have been used to explore the effects of near neighbor cells. Near neighbor cells can contribute a significantly increased dose depending on the geometric relationships. Different geometries demonstrate that tumors which grow by direct extension have a greater near neighbor effect, whereas infiltrative tumors lose this near neighbor dose which can be a significant decrease in dose to the cells that do not achieve optimal boron loading. This understanding helps to explain prior trial results and implies that tumors with small, closely packed cells that grow by direct extension will be the most amenable to boron neutron capture therapy.

  8. Study of Potential Sub-Micrometer-Thick Frost Events and Soil Water Content at Gale Crater

    NASA Astrophysics Data System (ADS)

    Martinez, G.; Fischer, E.; Renno, N. O.; De La Torre Juarez, M.; Meslin, P. Y.; Kemppinen, O.; Genzer, M.; Harri, A. M.; Ramos, M.; Borlina, C.; Schröder, S.; Gómez-Elvira, J.

    2014-12-01

    We analyze the highest confidence measurements of relative humidity [1] and ground temperature [2] to identify potential frost events at the surface of Gale Crater during the first 600 sols of the MSL mission. We find that between 4 and 6 am on sols 533, 535, 555, 557, 559 and 560 the ground temperature falls below the calculated frost point. Order-of-magnitude estimate for the thickness of the frost layer indicates that it is of the order of micrometers or less. Additionally, we analyze the relation between water vapor pressure and ground temperature to provide additional constraints on potential frost events and to quantify the exchange of adsorbed water between the surface and the atmosphere. Adsorbed water could be forced into liquid-like state at the of Gale because van der Waals forces between water ice molecules and mineral surfaces reduces the freezing point [3]. This form of liquid water is relevant to habitability because microorganisms could survive in liquid-like adsorbed water [4].References: [1] Harri, Ari-Matti et al., Mars Science Laboratory Relative Humidity Observations - Initial Results (2014), JGR (in press). [2] Martínez, G. M. et al., Surface Energy Budget and Thermal Inertia at Gale Crater: Calculations from Ground-Based Measurements (2014), JGR (in press). [3] Möhlmann, D., The influence of van der Waals forces on the state of water in the shallow subsurface of Mars (2008), Icarus 195 (1), 131-139. [4] Rivkina, E. M. et al., Metabolic activity of permafrost bacteria below the freezing point (2000), Appl. Environ. Microbiol., 66(8), 3230-3233.

  9. Online Aerosol Mass Spectrometry of Single Micrometer-Sized Particles Containing Poly(ethylene glycol)

    SciTech Connect

    Bogan, M J; Patton, E; Srivastava, A; Martin, S; Fergenson, D; Steele, P; Tobias, H; Gard, E; Frank, M

    2006-10-25

    Analysis of poly(ethylene glycol)(PEG)-containing particles by online single particle aerosol mass spectrometers equipped with laser desorption ionization (LDI) is reported. We demonstrate that PEG-containing particles are useful in the development of aerosol mass spectrometers because of their ease of preparation, low cost, and inherently recognizable mass spectra. Solutions containing millimolar quantities of PEGs were nebulized and, after drying, the resultant micrometer-sized PEG containing particles were sampled. LDI (266 nm) of particles containing NaCl and PEG molecules of average molecular weight <500 generated mass spectra reminiscent of mass spectra of PEG collected by other MS schemes including the characteristic distribution of positive ions (Na{sup +} adducts) separated by the 44 Da of the ethylene oxide units separating each degree of polymerization. PEGs of average molecular weight >500 were detected from particles that also contained t the tripeptide tyrosine-tyrosine-tyrosine or 2,5-dihydroxybenzoic acid, which were added to nebulized solutions to act as matrices to assist LDI using pulsed 266 nm and 355 nm lasers, respectively. Experiments were performed on two aerosol mass spectrometers, one reflectron and one linear, that each utilize two time-of-flight mass analyzers to detect positive and negative ions created from a single particle. PEG-containing particles are currently being employed in the optimization of our bioaerosol mass spectrometers for the application of measurements of complex biological samples, including human effluents, and we recommend that the same strategies will be of great utility to the development of any online aerosol LDI mass spectrometer platform.

  10. Sub-micrometer particles produced by a low-powered AC electric arc in liquids.

    PubMed

    Jaworski, Jacek A; Fleury, Eric

    2012-01-01

    The article presents the report of the production of composites of sub-micrometer metal particles in matrix consisted of the metal compounds by means of an AC electric arc in water and paraffin solutions using electrodes carbon-metal and metal-metal (metal: Ni, Fe, Co, Cu). The advantage of this method is the low electric power (from 5 to 10 W) needed in comparison to standard DC arc-discharge methods (0.8 to 3 kW). This method enables the production of particles from conductive material also in wide range of temperature and in solvent which could be either transparent to light or opaque. Moreover the solvent can be electrolyte or insulating liquid. The microstructure of the composite layer was investigated by scanning electron microscopy (SEM), Electron Probe Microanalysis (EPMA) and X-ray. During particles production in water metal oxides were created. Additionally using cobalt-copper, nickel-copper as couple electrodes, insoluble in water copper (II) hydroxide crystal grains were created additionally which crystals shape was depended on transition metal. For iron-copper couple electrodes system the copper (II) hydroxide was not formed. Experiments with sequence production of Ni and Fe particles with C electrode assisting in molten paraffin let to obtain both Ni and Fe particles surrounded by paraffin. After solidification the material was insulator but if locally magnetic field influenced on the liquid solution in that place after solidification a new composite was created which was electric current conductor with resistivity around 0.1 omega x m, was attracted by magnetic field and presented magneto resistance around 0.4% in changing magnetic field in a range 150 mT. After mixing the concentrated paraffin with normal paraffin resistivity of the mixture increased and it became photosensitive and created small voltage under light influence.

  11. Micrometer scale contact lens movements imaged by ultra-high resolution optical coherence tomography

    PubMed Central

    Cui, Lele; Shen, Meixiao; Wang, Michael R.; Wang, Jianhua

    2011-01-01

    PURPOSE To dynamically evaluate contact lens movement and ocular surface shape using ultra-high resolution and ultra-long scan depth optical coherence tomography (OCT). DESIGN Clinical research study of a laboratory technique. METHODS Four different types of soft contact lenses were tested on the left eye of 10 subjects (6 males and 4 females). Lenses edges at primary gaze and temporal and nasal gazes were imaged by ultra-high resolution OCT. Excursion lag was obtained as the distance between the lens edge at primary gaze and immediately after the eye was quickly turned either nasally or temporally. The inferior lens edges were imaged continuously to track vertical movements during blinking. Ultra-long scan depth OCT provided quantifiable images of the ocular surface, and the contour was acquired using custom software. RESULTS Excursion lag at the horizontal meridian was 366 ± 134 μm at temporal gaze and 320 ± 137 μm at nasal gaze (P > .05). The lens uplift at the vertical meridian was 342 ± 155 μm after blinking. There were significant differences in horizontal lags and vertical movements among different lenses (P < .05). Horizontal lags were correlated with radii of curvatures and sagittal heights at 6- and 14- mm horizontal meridian radii (P < .05). The blink-induced lens uplift first lowered by 104 ± 8 μm, and then lifted 342 ± 155 μm after the blink. CONCLUSIONS Ultra-high resolution and ultra-long scan depth OCT can assess micrometer scale lens movements and ocular surface contours. Both lens design and ocular surface shape affected lens movements. PMID:21920493

  12. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Doping inhomogeneities and behavior of compensation of n-type GaAs and InP

    NASA Astrophysics Data System (ADS)

    Wruck, D.; Knauer, A.

    1988-11-01

    A comparison was made of the distributions of Sn and of the chalcogens S and Se in InP and GaAs, determined from infrared absorption and the Hall effect. An analysis was made of the possible cause of the difference between the values of the degree of compensation determined by the two methods.

  13. A Ploidy-Sensitive Mechanism Regulates Aperture Formation on the Arabidopsis Pollen Surface and Guides Localization of the Aperture Factor INP1

    PubMed Central

    Reeder, Sarah H.; Lee, Byung Ha; Fox, Ronald; Dobritsa, Anna A.

    2016-01-01

    Pollen presents a powerful model for studying mechanisms of precise formation and deposition of extracellular structures. Deposition of the pollen wall exine leads to the generation of species-specific patterns on pollen surface. In most species, exine does not develop uniformly across the pollen surface, resulting in the formation of apertures–openings in the exine that are species-specific in number, morphology and location. A long time ago, it was proposed that number and positions of apertures might be determined by the geometry of tetrads of microspores–the precursors of pollen grains arising via meiotic cytokinesis, and by the number of last-contact points between sister microspores. We have tested this model by characterizing Arabidopsis mutants with ectopic apertures and/or abnormal geometry of meiotic products. Here we demonstrate that contact points per se do not act as aperture number determinants and that a correct geometric conformation of a tetrad is neither necessary nor sufficient to generate a correct number of apertures. A mechanism sensitive to pollen ploidy, however, is very important for aperture number and positions and for guiding the aperture factor INP1 to future aperture sites. In the mutants with ectopic apertures, the number and positions of INP1 localization sites change depending on ploidy or ploidy-related cell size and not on INP1 levels, suggesting that sites for aperture formation are specified before INP1 is brought to them. PMID:27177036

  14. Beam emittance forming line of the CW race-track microtron of the institute of nuclear physics of Moscow State University (INP MSU)

    NASA Astrophysics Data System (ADS)

    Alimov, A. S.; Gevorkyan, V. G.; Gorbatov, Yu. I.; Gribov, I. V.; Ibadov, A. Kh.; Ishkhanov, B. S.; Korneenkov, V. A.; Lazutin, E. V.; Makulbekov, E. A.; Piskarev, I. M.; Platov, K. Yu.; Savitsky, A. B.; Shumakov, A. V.; Shvedunov, V. I.; Sorvin, V. M.; Tiunov, A. V.; Ushkanov, V. A.; Zinoviev, S. V.

    1989-06-01

    The transverse and longitudinal emittance forming line (EFL) of the race-track microtron of INP MSU is described. The work presents the principles of operation, parameters of EFL elements, description of rf power supply system and automated control system. The method of EFL tuning and experimental results are discussed.

  15. Photoreflectance and DLTS evaluation of plasma-induced damage in GaAs and InP prior to solar cell fabrication

    NASA Technical Reports Server (NTRS)

    He, L.; Anderson, W. A.

    1991-01-01

    The effect is considered of plasma etching on both GaAs and InP followed by damage removal using rapid thermal annealing (RTA). Effects of these processes were studied by photoreflectance spectroscopy (PR) and deep level transient spectroscopy (DLTS). These techniques are useful in evaluation of wafers prior to and effects of plasma processing during solar cell fabrication.

  16. High resolution electrolyte for thinning InP by anodic dissolution and its applications to EC-V profiling, defect revealing and surface passivation

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Weinberg, Irving; Goradia, Manju; Vargas, Carlos

    1991-01-01

    An extensive experimental study was conducted using various electrolytes in an effort to find an appropriate electrolyte for anodic dissolution of InP. From the analysis of electrochemical characteristics in the dark and under different illumination levels, x ray photoelectron spectroscopy and SEM/Nomarski inspection of the surfaces, it was determined that the anodic dissolution of InP front surface layers by FAP electrolyte is a very good choice for rendering smooth surfaces, free of oxides and contaminants and with good electrical characteristics. The FAP electrolyte, based on HF, CH3COOH, and H2O2 appears to be inherently superior to previously reported electrolytes for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/sq cm. It can also be used for accurate electrochemical revealing of either precipitates or dislocation density with application to EPD mapping as a function of depth, and for defect revealing of multilayer InP structures at any depth and/or at the interfaces.

  17. Exploration of synchrotron Mossbauer micrscopy with micrometer resolution: forward and a new backscattering modality on natural samples

    SciTech Connect

    Yan, L.; Zhao, J.; Toellner, T.S.; Divan, R.; Xu, S.; Cai, Z.; Boesenberg, J.S.; Freidrich, J.M.; Cramer, S.P.; Alp, E.E.

    2012-01-01

    New aspects of synchrotron Moessbauer microscopy are presented. A 5 {micro}m spatial resolution is achieved, and sub-micrometer resolution is envisioned. Two distinct and unique methods, synchrotron Moessbauer imaging and nuclear resonant incoherent X-ray imaging, are used to resolve spatial distribution of species that are chemically and magnetically distinct from one another. Proof-of-principle experiments were performed on enriched {sup 57}Fe phantoms, and on samples with natural isotopic abundance, such as meteorites.

  18. Physiologically driven avian vocal synthesizer

    NASA Astrophysics Data System (ADS)

    Sitt, Jacobo D.; Arneodo, Ezequiel M.; Goller, Franz; Mindlin, Gabriel B.

    2010-03-01

    In this work, we build an electronic syrinx, i.e., a programmable electronic device capable of integrating biomechanical model equations for the avian vocal organ in order to synthesize song. This vocal prosthesis is controlled by the bird’s neural instructions to respiratory and the syringeal motor systems, thus opening great potential for studying motor control and its modification by sensory feedback mechanisms. Furthermore, a well-functioning subject-controlled vocal prosthesis can lay the foundation for similar devices in humans and thus provide directly health-related data and procedures.

  19. Method of synthesizing tungsten nanoparticles

    SciTech Connect

    Thoma, Steven G; Anderson, Travis M

    2013-02-12

    A method to synthesize tungsten nanoparticles has been developed that enables synthesis of nanometer-scale, monodisperse particles that can be stabilized only by tetrahydrofuran. The method can be used at room temperature, is scalable, and the product concentrated by standard means. Since no additives or stabilizing surfactants are required, this method is particularly well suited for producing tungsten nanoparticles for dispersion in polymers. If complete dispersion is achieved due to the size of the nanoparticles, then the optical properties of the polymer can be largely maintained.

  20. SOFIA Observations of SN 2010jl: Another Non-Detection of the 9.7 Micrometer Silicate Dust Feature

    NASA Technical Reports Server (NTRS)

    Williams, Brian J.; Fox, Ori D.

    2015-01-01

    We present photometric observations from the Stratospheric Observatory for Infrared Astronomy (SOFIA) at 11.1 micrometers of the Type IIn supernova (SN IIn) 2010jl. The SN is undetected by SOFIA, but the upper limits obtained, combined with new and archival detections from Spitzer at 3.6 and 4.5 micrometers, allow us to characterize the composition of the dust present. Dust in other SN IIn has been shown in previous works to reside in a circumstellar shell of material ejected by the progenitor system in the few millennia prior to explosion. Our model fits show that the dust in the system shows no evidence for the strong, ubiquitous 9.7 micrometer feature from silicate dust, suggesting the presence of carbonaceous grains. The observations are best fit with 0.01-0.05 solar mass of carbonaceous dust radiating at a temperature of approximately 550-620 degrees Kelvin. The dust composition may reveal clues concerning the nature of the progenitor system, which remains ambiguous for this subclass. Most of the single star progenitor systems proposed for SNe IIn, such as luminous blue variables, red supergiants, yellow hypergiants, and B[e] stars, all clearly show silicate dust in their pre-SN outflows. However, this post-SN result is consistent with the small sample of SNe IIn with mid-infrared observations, none of which show signs of emission from silicate dust in their infrared spectra.

  1. 17β-estradiol up-regulates miR-155 expression and reduces TP53INP1 expression in MCF-7 breast cancer cells.

    PubMed

    Zhang, Chunmei; Zhao, Jing; Deng, Huayu

    2013-07-01

    In estrogen responsive breast cancer cells, estradiol (E2) is a key regulator of cell proliferation and survival. MiR-155 has emerged as an "oncomiR", which is the most significantly up-regulated miRNA in breast cancer. Moreover, miR-155 is higher in ERα (+) breast tumors than ERα (-), but no one has examined whether E2 regulates miR-155 expression in MCF-7 cells. In this study, the aim was to explore whether miR-155 involved in E2 regulated expression of estrogen responsive genes. We evaluated miR-155 expression in human breast cancer cells by real-time PCR, finding out miR-155 was overexpressed in MCF-7 cells compared with MDA-MB-231 cells. Treatment with E2 in MCF-7 cells increased miR-155 expression, promoting proliferation and decreasing apoptosis, similarly, transfection of miR-155m to MCF-7 cells gave the similar results. In contrast, inhibited miR-155 expression by transfection with miR-155 inhibitors reduced proliferation and promoted apoptosis of MCF-7 cells. Moreover, TP53INP1 is one of the targets of miR-155. E2 negatively regulated TP53INP1 mRNA expression and the protein expression of TP53INP1, cleaved-caspase-3, -8, -9, and p21, whereas transfection with miR-155 inhibitors increased TP53INP1, cleaved-caspase-3, -8, -9, and p21 protein level. These results demonstrated that E2 promoted breast cancer development and progression possibly through increasing the expression of miR-155, which was overexpressed in MCF-7 cells, contributes to proliferation of MCF-7 cells possibly through down-regulating TP53INP1.

  2. Scatterometry for semiconductor sub-micrometer and nanometer critical dimension metrology

    NASA Astrophysics Data System (ADS)

    Al-Assaad, Rayan M.

    Scatterometry1 is one optical measurement technique that has been explored extensively for semiconductor sub-micrometer dimensional metrology. The technique refers to the measurements of reflected power upon the interaction of an incident beam with some periodic surface (grating). The characteristics of the diffractive surface affect directly the acquired measurements. Therefore it is possible to resolve some information about the grating line profile and dimensions from the measurements, which is referred to as the inverse scatterometry problem. As technology is continuously pushing lithographic processes to sub-nanometer precision2, aspects of the inverse scatterometry problem related to the accurate estimation and modeling of errors and the enhancement of the optimization methods become of great importance. For this purpose the effects of measurement errors on the estimated grating profile are analyzed in this dissertation and optimization methods are proposed to improve the accuracies in the estimated geometrical parameters for various grating profiles in real experimental conditions. A technique based on the information content analysis of the measurement data is further suggested to reduce the number of measurements required without the loss in the solution accuracies resulting in lower cost and more suitable real time implementation. Theoretical and experimental results are presented to validate these studies where the solutions to the profile parameters are accomplished by implementing a linear regression technique3. In addition a new scheme is proposed to address resolving more difficult profile parameters with sub-wavelength dimensions (sub-100 nm) that are until now subject to ongoing investigation with inconclusive results. The proposed approach consists of using a large number of angular reflectance measurements with linearly polarized TM incidence. In the case where the profile dimensions are many times smaller than the light wavelength, the parameter

  3. Micrometer-resolved film dosimetry using a microscope in microbeam radiation therapy

    SciTech Connect

    Bartzsch, Stefan Oelfke, Uwe; Lott, Johanna; Welsch, Katrin; Bräuer-Krisch, Elke

    2015-07-15

    Purpose: Microbeam radiation therapy (MRT) is a still preclinical tumor therapy approach that uses arrays of a few tens of micrometer wide parallel beams separated by a few 100 μm. The production, measurement, and planning of such radiation fields are a challenge up to now. Here, the authors investigate the feasibility of radiochromic film dosimetry in combination with a microscopic readout as a tool to validate peak and valley doses in MRT, which is an important requirement for a future clinical application of the therapy. Methods: Gafchromic{sup ®} HD-810 and HD-V2 films are exposed to MRT fields at the biomedical beamline ID17 of the European Synchrotron Radiation Facility (ESRF) and are afterward scanned with a microscope. The measured dose is compared with Monte Carlo calculations. Image analysis tools and film handling protocols are developed that allow accurate and reproducible dosimetry. The performance of HD-810 and HD-V2 films is compared and a detailed analysis of the resolution, noise, and energy dependence is carried out. Measurement uncertainties are identified and analyzed. Results: The dose was measured with a resolution of 5 × 1000 μm{sup 2} and an accuracy of 5% in the peak and between 10% and 15% in the valley region. As main causes for dosimetry uncertainties, statistical noise, film inhomogeneities, and calibration errors were identified. Calibration errors strongly increase at low doses and exceeded 3% for doses below 50 and 70 Gy for HD-V2 and HD-810 films, respectively. While the grain size of both film types is approximately 2 μm, the statistical noise in HD-V2 is much higher than in HD-810 films. However, HD-810 films show a higher energy dependence at low photon energies. Conclusions: Both film types are appropriate for dosimetry in MRT and the microscope is superior to the microdensitometer used before at the ESRF with respect to resolution and reproducibility. However, a very careful analysis of the image data is required

  4. Oxygen isotopic composition of micrometer-sized quartz grains in EPICA-Dome C ice core

    NASA Astrophysics Data System (ADS)

    Delmonte, B.; Hoppe, P.; Hellebrand, E.; Huth, J.; Petit, J.; Maggi, V.

    2006-12-01

    Depicting the geographic provenance of aeolian dust reaching the interior of the East Antarctic plateau is of primary importance for a thorough underst94anding of paleo-atmospheric circulation patterns. A geochemical approach based on the 87Sr/86Sr versus 143Nd/144Nd isotopic signature of mineral particles extracted from Antarctic ice cores and comparison with samples from the Potential Source Areas (PSA) of the Southern Hemisphere has been classically used. This allowed pointing out a dominant Southern South American provenance for dust in the EPICA-Dome C and Vostok ice cores during late Quaternary glacial stages. However, the Sr-Nd isotopic fields from other potential source regions did show a partial overlap with the South American and glacial dust fields, and complementary arguments had to be invoked to infer that their possible contribution is negligible. In this study, we propose a new approach for dust fingerprinting based on the 18O/16O ratios of micrometer- sized quartz grains (1 to 2 μm in size) entrapped in Antarctic ice. Micrometric quartz grains were first identified through SEM/EDX in a sample from the EPICA-Dome C ice core dating back the last glacial maximum. O-isotopic measurements on 25 single grains were performed with the NanoSIMS ion microprobe at the Max-Plank-Institute for Chemistry in Mainz. 18OSMOW values are between 2 and 43 per mil; however most 18OSMOW values fall within a gaussian distribution with a mean 18OSMOW of 25.5 per mil and standard deviation of 2.6 per mil (1^3). These results suggest that a significant contribution from Australian and New Zealand sources seems very unlikely during glacial stage 2, but unfortunately 18OSMOW values for small quartz grains from the Southern Hemisphere PSAs are very scarce. NanoSIMS O-isotopic measurements on Aeolian quartz grains entrapped in Antarctic ice by is a promising tool for investigating the geographic provenance of mineral dust in Quaternary times.

  5. Mid-infrared difference-frequency generation source pumped by 1.1-1.5 micrometer dual-wavelength fiber amplifier for trace-gas detection

    NASA Technical Reports Server (NTRS)

    Goldberg, L.; Koplow, J.; Lancaster, D. G.; Curl, R. F.; Tittel, F. K.

    1998-01-01

    Continuous-wave mid-infrared radiation near 3.5 micrometers is generated by difference-frequency mixing of the output of a compact 1.1-1.5 micrometer dual-wavelength fiber amplifier in periodically poled LiNbO3. The diode side-pumped amplifier is constructed with double-cladding Yb-doped fiber followed by single-mode Er/Yb codoped fiber. Output powers of as much as 11 microW at 3.4 micrometers are obtained, and spectroscopic detection of CH4 and H2CO is demonstrated. c 1998 Optical Society of America.

  6. Titan's Aerosol and Stratospheric Ice Opacities Between 18 and 500 Micrometers: Vertical and Spectral Characteristics from Cassini CIRS

    NASA Technical Reports Server (NTRS)

    Anderson, Carrie M.; Samuelson, Robert E.

    2011-01-01

    Vertical distributions and spectral characteristics of Titan's photochemical aerosol and stratospheric ices are determined between 20 and 560 per centimeter (500-18 micrometers) from the Cassini Composite Infrared Spectrometer (CIRS). Results are obtained for latitudes of 15 N, 15 S, and 58 S, where accurate temperature profiles can be independently determined. In addition, estimates of aerosol and ice abundances at 62 N relative to those at 15 S are derived. Aerosol abundances are comparable at the two latitudes, but stratospheric ices are approximately 3 times more abundant at 62 N than at 15 S. Generally, nitrile ice clouds (probably HCN and HC3N), as inferred from a composite emission feature at approximately 160 per centimeter, appear to be located over a narrow altitude range in the stratosphere centered at approximately 90 km. Although most abundant at high northern latitudes, these nitrile ice clouds extend down through low latitudes and into mid southern latitudes, at least as far as 58 S. There is some evidence of a second ice cloud layer at approximately 60 km altitude at 58 S associated with an emission feature at approximately 80 per centimeter. We speculate that the identify of this cloud may be due to C2H6 ice, which in the vapor phase is the most abundant hydrocarbon (next to CH4) in the stratosphere of Titan. Unlike the highly restricted range of altitudes (50-100 km) associated with organic condensate clouds, Titan's photochemical aerosol appears to be well-mixed from the surface to the top of the stratosphere near an altitude of 300 km, and the spectral shape does not appear to change between 15 N and 58 S latitude. The ratio of aerosol-to-gas scale heights range from 1.3-2.4 at about 160 km to 1.1-1.4 at 300 km, although there is considerable variability with latitude, The aerosol exhibits a very broad emission feature peaking at approximately 140 per centimeter. Due to its extreme breadth and low wavenumber, we speculate that this feature may

  7. Molecular Syntheses of Extended Materials

    NASA Astrophysics Data System (ADS)

    Paley, Daniel W.

    Bottom-up molecular synthesis is a route to chemically and crystallographically uniform polymers and solid-state materials. Through the use of molecular precursors, we gain atomic-level control of functionality and fine-tuning of the collective properties of materials. This dissertation presents two studies that demonstrate this approach. Ring-opening alkyne metathesis polymerization is a possible approach to monodisperse conjugated polymers, but its applications have been limited by difficult syntheses and high air sensitivity of known organometallic ROAMP initiators. We designed a dimeric, air-stable molybdenum alkylidyne with a tris(phenolate) supporting ligand. The precatalyst is activated by addition of methanol and polymerizes cyclooctynes with excellent chemical selectivity and functional group tolerance. The Nuckolls and Roy groups have introduced a new family of solid-state compounds synthesized from cobalt chalcogenide clusters Co6Q 8(PR3)6 and fullerenes. The first examples of these materials crystallized in superatom lattices with the symmetry of simple inorganic solids CdI2 (P-3m1) and NaCl (Fm-3m). This dissertation reveals that further members of the family feature extraordinary diversity of structure, including a pseudo-trigonal array of fulleride dimers in [Co 6Te8(PEt3)6]2[C140 ][C70]2 and a heterolayered van der Waals cocrystal [Co6Se8(PEt2phen)6][C 60]5. In addition to these unusual crystal structures, this dissertation presents a method for assigning redox states from crystallographic data in Co6Q8 clusters. Finally, a detailed guide to the collection and solution of single-crystal X-ray data is presented. The guide is intended for independent study by new crystallographers.

  8. Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Flicstein, J.; Guillonneau, E.; Marquez, J.; How Kee Chun, L. S.; Maisonneuve, D.; David, C.; Wang, Zh.; Palmier, J. F.; Courant, J. L.

    2000-02-01

    We report on an accurate validation of a new Monte Carlo three-dimensional model. Simulations up to 1200 Å layer thickness have been carried out for amorphous thin film layers of SiN:H deposited at low temperature (400-650 K) on (100) InP, by vacuum ultraviolet (VUV, ˜185 nm)-induced chemical vapor deposition (CVD). The computer simulations in the mesoscopic-submicronic range are compared with atomic force microscopy and index of refraction measurements. The reconstituted surface roughness and the voids discrete representations of the bulk are found to be in good agreement with these measurements. Simultaneously at around 450 K (at ˜175°C), thermal characteristic evolution of the both surface roughness and bulk porosity showed a transition from rough to smooth deposition and from low to high density.

  9. Structure Factors of InP Determined by the Pendellösung Method Using White Radiation

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kazuyoshi; Takama, Toshihiko; Tohno, Shun-ichi; Sato, Shin'ichi

    1988-10-01

    The Pendellösung intensity beats in wavelength scale were measured to determine the structure factors of InP crystal by the energy-dispersive diffraction method. The clear beats obtained for eleven low-order reflections from the 111 to 440 reflections were analyzed to evaluate the structure factors with their wavelength dependence on the basis of the dynamical diffraction theory. The values were different from those measured by Sirota and Gololobov (Acta Crystallogr. A25 (1969) 223) using the powder diffraction method, especially for high-order reflections. A discussion is made on the charge density of valence electrons using the obtained structure factors and the tetrahedral charge distortion model. The measured wavelength dependence of the structure factors can be interpreted well by the anomalous dispersion terms of Cromer and Liberman (J. Chem. Phys. 53 (1970) 1891).

  10. Chemical treatment and Fermi-level pinning of CuInS2 and InP photocathodes

    NASA Astrophysics Data System (ADS)

    Lewerenz, H. J.; Goslowsky, H.

    1988-04-01

    The dependence of the photovoltage, V(Ph), in the p-CuInS2/V(2+)-V(3+) and p-InP/V(2+)-V(3+) solar cells on the redox potential E of the vanadium solution was investigated for different surface conditions of the P-CuInS2 and p-InP. Samples were etched by immersion, for varying times, into a 2:1:1 mixture of H2O-30 percent H2O2-conc. H2SO4 (for CuInS2) or of H2O-HCl-HNO3 (for InP). Etching and chemisorption were found to successively improve CuInS2 photovoltages, resulting in a slope of about 1 in the V(Ph) vs E plots.

  11. LPE growth of 1.3 micron InGaAsP CW lasers on /110/ InP substrates

    NASA Technical Reports Server (NTRS)

    Hawrylo, F. Z.

    1981-01-01

    A description is presented of the liquid-phase epitaxial (LPE) growth of high-quality InGaAsP/InP continuous-wave (CW) laser structures on (110) InP substrates using conventional LPE without the need for special growth procedures. Double heterojunction laser structures were grown using the LPE supercooling method with a horizontal sliding boat. Low broad-area current densities (970 A/sq cm) and CW operation achieved at room temperature indicate that results comparable to up-to-date devices may be achieved. The inherent tendency for surface planarity maintenance due to the perfect surface stoichiometry of the (110) surface is a feature that may lend itself to the generation of improved interface growth in quaternary III-V and related semiconductor alloy systems. The similar cross-sectional appearance of structures grown on (110) and (100) orientations show that conventional LPE can be used with (110) surface planes without introducing special growth procedures.

  12. Parasitic Parameters Extraction for InP DHBT Based on EM Method and Validation up to H-Band

    NASA Astrophysics Data System (ADS)

    Li, Oupeng; Zhang, Yong; Wang, Lei; Xu, Ruimin; Cheng, Wei; Wang, Yuan; Lu, Haiyan

    2017-01-01

    This paper presents a small-signal model for InGaAs/InP double heterojunction bipolar transistor (DHBT). Parasitic parameters of access via and electrode finger are extracted by 3-D electromagnetic (EM) simulation. By analyzing the equivalent circuit of seven special structures and using the EM simulation results, the parasitic parameters are extracted systematically. Compared with multi-port s-parameter EM model, the equivalent circuit model has clear physical intension and avoids the complex internal ports setting. The model is validated on a 0.5 × 7 μm2 InP DHBT up to 325 GHz. The model provides a good fitting result between measured and simulated multi-bias s-parameters in full band. At last, an H-band amplifier is designed and fabricated for further verification. The measured amplifier performance is highly agreed with the model prediction, which indicates the model has good accuracy in submillimeterwave band.

  13. In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

    SciTech Connect

    Dong, H.; KC, Santosh; Azcatl, A.; Cabrera, W.; Qin, X.; Brennan, B.; Cho, K.; Wallace, R. M.; Zhernokletov, D.

    2013-11-28

    The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.

  14. Nucleation and growth of epitaxial cadmium selenide electrodeposited on InP and GaAs single crystals

    SciTech Connect

    Beaunier, L.; Cachet, H.; Froment, M.; Maurin, G.

    2000-05-01

    Epitaxial CdSe layers were electrodeposited from aqueous solutions onto InP and GaAs single crystals. The analysis of current transients shows that the growth kinetics corresponds to the Scharifker model assuming a progressive nucleation followed by three-dimensional diffusion-limited growth. Diffusion control is effective after less than 0.1 s after the beginning of the potential pulse. The phenomena associated with the formation of a coherent film cannot be detected by this technique. Transmission electron microscopy observations of CdSe films with increasing thicknesses show when the diffusion control is effective, a large density of growth steps followed by the formation of epitaxial nuclei which finally coalesce.

  15. C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate

    NASA Astrophysics Data System (ADS)

    Limeng, Zhang; Dan, Lu; Zhaosong, Li; Biwei, Pan; Lingjuan, Zhao

    2016-12-01

    The design, fabrication and characterization of a fundamental/first-order mode converter based on multimode interference coupler on InP substrate were reported. Detailed optimization of the device parameters were investigated using 3D beam propagation method. In the experiments, the fabricated mode converter realized mode conversion from the fundamental mode to the first-order mode in the wavelength range of 1530-1565 nm with excess loss less than 3 dB. Moreover, LP01 and LP11 fiber modes were successfully excited from a few-mode fiber by using the device. This InP-based mode converter can be a possible candidate for integrated transceivers for future mode-division multiplexing system. Project supported by the National Basic Research Program of China (No. 2014CB340102) and in part by the National Natural Science Foundation of China (Nos. 61274045, 61335009).

  16. Modelling of OPNMR phenomena using photon energy-dependent in GaAs and InP

    NASA Astrophysics Data System (ADS)

    Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

  17. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    NASA Technical Reports Server (NTRS)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  18. Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

    SciTech Connect

    Barettin, Daniele Auf der Maur, Matthias; De Angelis, Roberta; Prosposito, Paolo; Casalboni, Mauro; Pecchia, Alessandro

    2015-03-07

    We report on numerical simulations of InP surface lateral quantum-dot molecules on In{sub 0.48}Ga{sub 0.52 }P buffer, using a model strictly derived by experimental results by extrapolation of the molecules shape from atomic force microscopy images. Our study has been inspired by the comparison of a photoluminescence spectrum of a high-density InP surface quantum dot sample with a numerical ensemble average given by a weighted sum of simulated single quantum-dot spectra. A lack of experimental optical response from the smaller dots of the sample is found to be due to strong inter-dot strain fields, which influence the optoelectronic properties of lateral quantum-dot molecules. Continuum electromechanical, k{sup →}·p{sup →} bandstructure, and optical calculations are presented for two different molecules, the first composed of two dots of nearly identical dimensions (homonuclear), the second of two dots with rather different sizes (heteronuclear). We show that in the homonuclear molecule the hydrostatic strain raises a potential barrier for the electrons in the connection zone between the dots, while conversely the holes do not experience any barrier, which considerably increases the coupling. Results for the heteronuclear molecule show instead that its dots do not appear as two separate and distinguishable structures, but as a single large dot, and no optical emission is observed in the range of higher energies where the smaller dot is supposed to emit. We believe that in samples of such a high density the smaller dots result as practically incorporated into bigger molecular structures, an effect strongly enforced by the inter-dot strain fields, and consequently it is not possible to experimentally obtain a separate optical emission from the smaller dots.

  19. High and low energy proton radiation damage in p/n InP MOCVD solar cells

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Weinberg, Irving; Scheiman, Dave; Vargas-Aburto, Carlos

    1995-01-01

    InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  20. Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires.

    PubMed

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H Q

    2016-04-06

    We report on a theoretical study of the electronic structures of the [1 1 1]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp(3)s*, spin-orbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C(3v) double point group. It is shown that all bands of these nanowires are doubly degenerate at the Γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the Γ-point as a manifestation of spin-splitting due to spin-orbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [1 1 1]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.

  1. Sub-micrometer sized yttrium oxide fibers prepared through hydrothermal reaction

    SciTech Connect

    Li, Nan; Yanagisawa, Kazumichi

    2011-03-15

    Research highlights: {yields} Y{sub 2}O{sub 3} fibers were synthesized by hydrothermal reaction followed by calcination. {yields} Y(OH){sub x}Cl{sub 3-x}.yH{sub 2}O was received from hydrothermal reaction. {yields} Y{sub 2}O{sub 3} fibers showed outstanding high-temperature stability. -- Abstract: Yttrium oxide fibers have been synthesized via hydrothermal reaction and subsequent thermal treatment using yttrium chloride as precursor. The products before and after the thermal treatment were characterized by powder X-ray diffractions (XRD), scanning electron microscopy (SEM), ion-chromatograph analysis, and thermogravimetry and differential thermal analysis (TG-DTA). The fiber diameter ranged from 100 to 300 nm, while the length was up to tens of microns. It was found that the chemical composition and morphology of the products were closely related to the pH value of reaction solution, and fibrous products could be obtained at pH 9.5-10.25. These oxide fibers exhibited outstanding high-temperature stability, which maintained their morphology at temperature up to 1400 {sup o}C.

  2. Micrometer-sized water droplet impingement dynamics and evaporation on a flat dry surface.

    PubMed

    Briones, Alejandro M; Ervin, Jamie S; Putnam, Shawn A; Byrd, Larry W; Gschwender, Lois

    2010-08-17

    A comprehensive numerical and experimental investigation on micrometer-sized water droplet impact dynamics and evaporation on an unheated, flat, dry surface is conducted from the standpoint of spray-cooling technology. The axisymmetric time-dependent governing equations of continuity, momentum, energy, and species are solved. Surface tension, wall adhesion effect, gravitational body force, contact line dynamics, and evaporation are accounted for in the governing equations. The explicit volume of fluid (VOF) model with dynamic meshing and variable-time stepping in serial and parallel processors is used to capture the time-dependent liquid-gas interface motion throughout the computational domain. The numerical model includes temperature- and species-dependent thermodynamic and transport properties. The contact line dynamics and the evaporation rate are predicted using Blake's and Schrage's molecular kinetic models, respectively. An extensive grid independence study was conducted. Droplet impingement and evaporation data are acquired with a standard dispensing/imaging system and high-speed photography. The numerical results are compared with measurements reported in the literature for millimeter-size droplets and with current microdroplet experiments in terms of instantaneous droplet shape and temporal spread (R/D(0) or R/R(E)), flatness ratio (H/D(0)), and height (H/H(E)) profiles, as well as temporal volume (inverted A) profile. The Weber numbers (We) for impinging droplets vary from 1.4 to 35.2 at nearly constant Ohnesorge number (Oh) of approximately 0.025-0.029. Both numerical and experimental results show that there is air bubble entrapment due to impingement. Numerical results indicate that Blake's formulation provides better results than the static (SCA) and dynamic contact angle (DCA) approach in terms of temporal evolution of R/D(0) and H/D(0) (especially at the initial stages of spreading) and equilibrium flatness ratio (H(E)/D(0)). Blake's contact line

  3. Synthese de champs sonores adaptative

    NASA Astrophysics Data System (ADS)

    Gauthier, Philippe-Aubert

    La reproduction de champs acoustiques est une approche physique au probleme technologique de la spatialisation sonore. Cette these concerne l'aspect physique de la reproduction de champs acoustiques. L'objectif principal est l'amelioration de la reproduction de champs acoustiques par "synthese de champs acoustiques" ("Wave Field Synthesis", WFS), une approche connue, basee sur des hypotheses de champ libre, a l'aide du controle actif par l'ajout de capteurs de l'erreur de reproduction et d'une boucle fermee. Un premier chapitre technique (chapitre 4) expose les resultats d'appreciation objective de la WFS par simulations et mesures experimentales. L'effet indesirable de la salle de reproduction sur les qualites objectives de la WFS fut illustre. Une premiere question de recherche fut ensuite abordee (chapitre 5), a savoir s'il est possible de reproduire des champs progressifs en salle dans un paradigme physique de controle actif: cette possibilite fut prouvee. L'approche technique privilegiee, "synthese de champs adaptative" ("Adaptive Wave Field Synthesis" [AWFS]), fut definie, puis simulee (chapitre 6). Cette approche d'AWFS comporte une originalite en controle actif et en reproduction de champs acoustiques: la fonction cout quadratique representant la minimisation des erreurs de reproduction inclut une regularisation de Tikhonov avec solution a priori qui vient de la WFS. L'etude de l'AWFS a l'aide de la decomposition en valeurs singulieres (chapitre 7) a permis de comprendre les mecanismes propres a l'AWFS. C'est la deuxieme principale originalite de la these. L'algorithme FXLMS (LMS et reference filtree) est modifie pour l'AWFS (chapitre 8). Le decouplage du systeme par decomposition en valeurs singulieres est illustre dans le domaine du traitement de signal et l'AWFS basee sur le controle independant des modes de rayonnement est simulee (chapitre 8). Ce qui constitue la troisieme originalite principale de cette these. Ces simulations du traitement de signal

  4. Mercury: Evidence for anorthosite and basalt from mid-infrared (7.3-13.5 micrometers) spectroscopy

    NASA Technical Reports Server (NTRS)

    Sprague, A. L.; Kozlowski, R. W. H.; Witteborn, F. C.; Cruikshank, D. P.; Wooden, D. H.

    1994-01-01

    Spectroscopic observations (7.3-13.5 micrometers) of three locations on the surface of Mercury are reported. The observed spectral radiance emanated from equatorial and low altitude regions between 12 and 32 deg mercurian longitude on 8 December 1990, from the longitudinal region 22-44 deg on 10 December 1990, and from the longitudinal region 110-130 deg on 12 July 1992; all locations are primarily intercrater plains. Spectra indicate compositional differences among these three locations. The emissivity maximum, or Christiansen emission peak, occurs at 8.1 micrometers in the 8 December 1990 spectra, but at shorter wavelengths in the data of 10 December 1990 and 12 July 1992. Emission peaks near 8 micrometers indicate rocks of intermediate or mafic composition. Spectra from 22 to 44 deg longitude resemble spectra of terrestrial basalt and diorite with SiO2 content between 49 and 55%. The Christiansen feature in spectra from near 110-130 deg longitude strongly suggests the presence of plagioclase, in particular labradorite, while the overall spectrum resembles anorthosite. The spectra from all three locations on Mercury show distinct and recognizable features, the principal Christiansen emission peak being the most prominent, but they also contain features that we have not yet identified. The general indication from the spectra is that Mercury's surface consists of minerals more depleted in oxidized iron than those on the Moon. We also explore the theoretical and observational complexities of ground-based mid-infrared spectroscopy of airless bodies in general and Mercury in particular. A spectroscopic study of quartzite in both reflectance and emittance illustrates the practical, spectral validity of Kirchhoff's law.

  5. Roles for microRNAs, miR-93 and miR-130b, and TP53INP1 tumor suppressor in cell growth dysregulation by HTLV-1

    PubMed Central

    Yeung, Man Lung; Yasunaga, Jun-ichirou; Bennasser, Yamina; Dusetti, Nelson; Harris, David; Ahmad, Nafees; Matsuoka, Masao; Jeang, Kuan-Teh

    2008-01-01

    A role for miRNAs in human T-cell leukemia virus-1, HTLV-1, mediated cellular transformation has not been described. Here, we profiled miRNA expression in HTLV-1 transformed human T cell lines and primary peripheral blood mononuclear cells (PBMCs) from Adult-T cell leukemia (ATL) patients. Analyses of eleven different profiles revealed six miRNAs which were consistently up-regulated. Two of the up-regulated miRNAs (miR-93 and miR-130b) target the 3′ untranslated region (3′UTR) of the mRNA for a tumor suppressor protein, Tumor Protein 53-Induced Nuclear Protein 1 (TP53INP1). A low expression level of TP53INP1 protein was found in HTLV-1 transformed cells. Additionally, when antagomirs were used to knock down miR-93 and miR-130b in these cells, the expression of TP53INP1 was increased suggesting that the latter is regulated inside cells by the former. A role for TP53INP1 in regulating cell growth was established by experiments which showed that enhanced TP53INP1 expression increased apoptosis. Collectively, the findings implicate a miR-93/miR-130b – TP53INP1 axis that impacts the proliferation and survival of HTLV-1 infected / transformed cells. PMID:18974142

  6. Comparison of cloud boundaries measured with 8.6 mm radar and 10.6 micrometer lidar

    NASA Technical Reports Server (NTRS)

    Uttal, Taneil; Intrieri, Janet M.

    1993-01-01

    One of the most basic cloud properties is location; the height of cloud base and the height of cloud top. The glossary of meteorology defines cloud base (top) as follows: 'For a given cloud or cloud layer, that lowest (highest) level in the atmosphere at which the air contains a perceptible quantity of cloud particles.' Our studies show that for a 8.66 mm radar, and a 10.6 micrometer lidar, the level at which cloud hydrometers become 'perceptible' can vary significantly as a function of the different wavelengths, powers, beamwidths and sampling rates of the two remote sensors.

  7. Exploration of synchrotron Mössbauer microscopy with micrometer resolution: forward and a new backscattering modality on natural samples

    PubMed Central

    Yan, Lifen; Zhao, Jiyong; Toellner, Thomas S.; Divan, Ralu; Xu, Shenglan; Cai, Zhonghou; Boesenberg, Joseph S.; Friedrich, Jon M.; Cramer, Stephen P.; Alp, Esen E.

    2012-01-01

    New aspects of synchrotron Mössbauer microscopy are presented. A 5 µm spatial resolution is achieved, and sub-micrometer resolution is envisioned. Two distinct and unique methods, synchrotron Mössbauer imaging and nuclear resonant incoherent X-ray imaging, are used to resolve spatial distribution of species that are chemically and magnetically distinct from one another. Proof-of-principle experiments were performed on enriched 57Fe phantoms, and on samples with natural isotopic abundance, such as meteorites. PMID:22898962

  8. Aluminum Foils of the Stardust Interstellar Collector: The Challenge of Recognizing Micrometer-sized Impact Craters made by Interstellar Grains

    NASA Technical Reports Server (NTRS)

    Kearsley, A. T.; Westphal, A. J.; Burchell, M. J.; Zolensky, Michael E.

    2008-01-01

    Preliminary Examination (PE) of the Stardust cometary collector revealed material embedded in aerogel and on aluminium (Al) foil. Large numbers of sub-micrometer impact craters gave size, structural and compositional information. With experience of finding and analyzing the picogram to nanogram mass remains of cometary particles, are we now ready for PE of the Interstellar (IS) collector? Possible interstellar particle (ISP) tracks in the aerogel are being identified by the stardust@home team. We are now assessing challenges facing PE of Al foils from the interstellar collector.

  9. Synthesizing Diamond from Liquid Feedstock

    NASA Technical Reports Server (NTRS)

    Tzeng, Yonhua

    2005-01-01

    A relatively economical method of chemical vapor deposition (CVD) has been developed for synthesizing diamond crystals and films. Unlike prior CVD methods for synthesizing diamond, this method does not require precisely proportioned flows of compressed gas feedstocks or the use of electrical discharges to decompose the feedstocks to obtain free radicals needed for deposition chemical reactions. Instead, the feedstocks used in this method are mixtures of common organic liquids that can be prepared in advance, and decomposition of feedstock vapors is effected simply by heating. The feedstock used in this method is a solution comprising between 90 and 99 weight percent of methanol and the balance of one or more other oxyhydrocarbons that could include ethanol, isopropanol, and/or acetone. This mixture of compounds is chosen so that dissociation of molecules results in the desired proportions of carbon-containing radicals (principally, CH3) and of OH, H, and O radicals. Undesirably, the CVD temperature and pressure conditions thermodynamically favor the growth of graphite over the growth of diamond. The H radicals are desirable because they help to stabilize the growing surface of diamond by shifting the thermodynamic balance toward favoring the growth of diamond. The OH and O radicals are desirable because they preferentially etch graphite and other non-diamond carbon, thereby helping to ensure the net deposition of pure diamond. The non-methanol compounds are included in the solution because (1) methanol contains equal numbers of C and O atoms; (2) an excess of C over O is needed to obtain net deposition of diamond; and (3) the non-methanol molecules contain multiple carbon atoms for each oxygen atom and thus supply the needed excess carbon A typical apparatus used in this method includes a reservoir containing the feedstock liquid and a partially evacuated stainless-steel reaction chamber. The reservoir is connected to the chamber via tubing and a needle valve or

  10. Thermally stable, low resistance contact systems for use with shallow junction p(+) nn(+) and n(+)pp(+) InP solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, V. G.; Fatemi, N. S.; Hoffman, R. W.

    1995-01-01

    Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.

  11. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.

    PubMed

    Kuyanov, P; LaPierre, R R

    2015-08-07

    InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron microscopy, allowing the development of a model where QD growth occurs by group V desorption from the surrounding substrate surface. Micro-photoluminescence was performed at 10 K showing emission at 1.47-1.49 eV from the InP wurtzite structure, and various emission peaks between 0.93 and 1.33 eV attributed to the QDs. The emission was tuned by the QD composition. The effectiveness of an AlInP passivation shell was demonstrated via an improvement in the photoluminescence intensity. Spectrally-resolved photocurrent measurements at room temperature demonstrated infrared response due to absorption within the QDs. The absorption red-shifted with increasing As composition of the QD.

  12. Stability Test of White LED with Bilayer Structure of Red InP Quantum Dots and Yellow YAG:Ce3+ Phosphor.

    PubMed

    Park, Kwangwon; Deressa, Gemechu; Kim, Daehan; Kim, Jongsu; Kim, Jihoon; Kim, Taehoon

    2016-02-01

    The white-light-emitting diode (white LED), based on the bilayer structure of red InP quantum dots (QDs) with 610 nm peak, and yellow YAG:Ce3+ phosphor with 550 nm peak, were fabricated through a conventional 5050 type LED fabrication process. The white LED exhibited high luminous efficiency of >130 Im/W and high color rendering index of >80 under operating current of 60 mA and color temperature of 5800 K. As an increase of QDs concentrations, the white LED showed higher color rendering index along with lower luminous efficiency, and the energy loss in the reabsorption process between yellow YAG:Ce3+ emission and red QD absorption was observed. As the temperature increases, the x-color coordinates were significantly changed, indicating that the InP QDs still have lower thermal stability. Also our white LED showed about 50% lumen maintenance after 45,000 hours of normal operation.

  13. Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

    SciTech Connect

    Hajlaoui, C. Pedesseau, L.; Raouafi, F.; Ben Cheikh Larbi, F.; Even, J.; Jancu, J.-M.

    2015-08-15

    We report first-principle density functional calculations of the spontaneous polarization, piezoelectric stress constants, and elastic constants for the III–V wurtzite structure semiconductors InAs and InP. Using the density functional theory implemented in the VASP code, we obtain polarization values–0.011 and–0.013 C/m{sup 2}, and piezoelectric constants e{sub 33} (e{sub 31}) equal to 0.091 (–0.026) and 0.012 (–0.081) C/m{sup 2} for structurally relaxed InP and InAs respectively. These values are consistently smaller than those of nitrides. Therefore, we predict a smaller built-in electric field in such structures.

  14. X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Contour, J. P.; Massies, J.; Saletes, A.

    1985-07-01

    The effect of chemical etching by H2S04/H202/H20 (5/1/1) mixtures and of mechanopolishing by bromine-methanol diluted solution on GaAs (001) and InP (001) substrates for molecular beam epitaxy (MBE) has been studied using X-ray photoelectron spectroscopy (XPS). The final rinse in running deionized water does not produce any passivating oxide layer on the substrate surface. Oxidation observed on GaAs and InP after these cleaning procedures occurs during substrate handling in air. The H2S04/H202/H20 mixture produces arsenic rich surface layers having an atomic ratio As/Ga of 1.15, whereas the bromine-methanol mechanopolishing leads to an arsenic or phosphorus depleted surface with atomic ratios As/Ga=0.7 and P/In=0.65.

  15. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential.

    PubMed

    Carrete, J; Longo, R C; Gallego, L J

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity λ of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of λ about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  16. Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

    SciTech Connect

    Postigo, P. A.; Suarez, F.; Sanz-Hervas, A.; Sangrador, J.; Fonstad, C. G.

    2008-01-01

    Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 deg. C and different doses of H* were used; after this, the growth proceeded without H* while the temperature was increased slowly with time. The incorporation of H* drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.

  17. FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

    NASA Astrophysics Data System (ADS)

    Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

    2016-01-01

    This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

  18. Angular Dependence of the Photoelectron Energy Distribution of InP(100) and GaAs(100) Negative Electron Affinity Photocathodes

    SciTech Connect

    Lee, Dong-Ick; Sun, Yun; Lu, Zhi; Sun, Shiyu; Pianetta, Piero; /SLAC, SSRL

    2007-10-15

    Energy distribution of the photoelectrons from InP(100) photocathodes are investigated with a photon energy range from 0.62eV to 2.76eV. When the photon energy is less than 1.8eV, only electrons emitted from the Gamma valley are observed in the energy distribution curves (EDC). At higher photon energies, electrons from the L valley are observed. The angular dependence of the electron energy distributions of InP and GaAs photocathodes are studied and compared. The electrons emitted from the L valley have a larger angular spread than the ones from the Gamma valley due to the larger effective mass of the L valley minimum.

  19. Crystal growth and fabrication of a 1.3-µm-wavelength multiple-quantum-well laser on a (211)A InP substrate

    NASA Astrophysics Data System (ADS)

    Okuno, Y.; Tsuchiya, T.; Okai, M.

    1997-10-01

    We demonstrate the fabrication of a long-wavelength laser on a (211) InP substrate, with the expectation of reducing threshold current density. We found that InGaAsP single quantum wells (SQWs) could be fabricated with good optical properties provided the SQW layers were not made too thin. A laser that had an unstrained multiple-quantum-well active layer emitting at 1.3 μm was fabricated on a (211)A InP substrate. Its threshold current density was 900 A/cm2, which is comparable to the value for the same type of laser on a (100) substrate. These results suggest that long-wavelength lasers with satisfactory quality can be fabricated on a (211)A substrate.

  20. Calculated performance of p(+)n InP solar cells with In(0.52)Al(0.48)As window layers

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    The performance of indium phosphide solar cells with lattice matched wide band-gap In(0.52)Al(0.48)As window layers was calculated using the PC-1D computer code. The conversion efficiency of p(+)n InP solar cells is improved significantly by the window layer. No improvement is seen for n(+)p structures. The improvement in InP cell efficiency was studied as a function of In(0.52)Al(0.48)As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current.For a typical In(0.52)Al(0.48)As window layer thickness of 20 nm, the cell efficiency improves in excess of 27 percent to a value of 18.74 percent.

  1. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-04-07

    The passivation effect of an Al2O3 layer on electrical properties were investigated in HfO2--Al2O3 laminate structures grown on InP substrate by atomic layer deposition (ALD). The chemical state using HR-XPS showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2--Al2O3 laminate structures. The Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics, due to the interfacial reaction, compared with those of different stacking structures. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, while the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that of HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3/ layer on InP reduces the midgap traps to 2.6 × 10(12) eV(-1)cm(-2) (compared with that of HfO2/InP = 5.4 × 10(12) eV(-1)cm(-2)). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  2. A dual purpose, all optical multiplexer circuit in InP, for multiplexing clock and NRZ data, and for transmultiplexing WDM to TDM.

    PubMed

    Kuindersma, P I; Leijtens, X J M; van Zantvoort, J H C; de Waardt, H

    2012-12-31

    We present a new, integrated all-optical multiplexer for wavelength grooming of many WDM channels into a single TDM channel. The chips were realized in a novel generic InP foundry process. For design and mask layout of the multiplexer circuits, we developed a simple equivalent circuit, representing the incorporated wavelength converter. With the chips realized, successful WDM to TDM transmultiplexing is demonstrated, as well as multiplexing of clock and NRZ data.

  3. Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons

    SciTech Connect

    Khutsishvili, Elza; Khomasuridze, David; Gabrichidze, Leonti; Kvirkvelia, Bella; Kekelidze, David; Guguchia, Zurab; Aliyev, Vugar; Kekelidze, Nodar

    2013-12-04

    We have studied the low temperature charge carriers mobility in bulk single crystals of InAs- and InP- rich InAs-InP solid solutions irradiated with maximum integral flux 2⋅10{sup 18} n/cm{sup 2} of fast neutrons. Influence of minor component small addition in InAs-InP solid solutions has been revealed. There are also presented data of radiation defects thermal stability.

  4. Inhibition of mitomycin C-induced chromosomal aberrations by micrometer powder of selenium-enriched green tea in mice spermatocytes.

    PubMed

    Li, Feng; Xu, Juan; Zhou, Jing; Zhao, Liyan; Sheng, Jianchun; Sun, Guiju; Hu, Qiuhui

    2009-04-30

    The anticlastogenic effect of micrometer powder of selenium-enriched green tea (MSTP) was evaluated by using a chromosomal aberration assay in mouse testicular cells. Animals fed with a Se-deficient diet were treated with MSTP, micrometer powder of regular green tea (MRTP), selenite, and MRTP + selenite for 30 days by an intragastric route, followed by treatment of mitomycin C (MMC) on day 19 through intraperitoneal injection (ip). Selenium status and antioxidant enzymes were measured. Results indicated that MSTP showed a significant capability to reduce the incidence of MMC-induced chromosomal aberrations in spermatocytes from 22.7% to 6.7%. This inhibitory was highest, for MSTP, at 73.1%, while it was only 38.4% for MRTP. After 30 days of a Se-deficient diet, mice, either with or without the MMC treatment, showed a lower selenium concentration in blood and liver as well as lower enzyme activity of the antioxidants, GPx and SOD. Supplementation with MSTP, selenite, or selenite + MRTP enhanced the activities of these antioxidant enzymes. This enhancement was accompanied with a concomitant elevation of selenium levels, which favored the synthesis of the seleno-enzyme GPx and protected the cells from the MMC-induced oxidative stress. Our results indicate that MSTP is both able to prevent the chromosomal aberrations induced by MMC in mouse spermatocytes and to enhance GPx and SOD activity in blood serum and liver.

  5. The Use of Auger Spectroscopy for the in situ Elemental Characterization of Sub-micrometer Presolar Grains

    SciTech Connect

    Stadermann, Frank J.; Floss, Christine; Bose, Maitrayee P.; Lea, Alan S.

    2009-10-01

    Presolar grains are small samples of stardust which can be found at low abundances in some of the most unaltered types of extraterrestrial materials. These grains condensed in the environments of massive stars before the formation of the solar system and survived incorporation into solar system materials without completely losing their isotopic, elemental and mineralogical makeup. Laboratory analyses of these presolar grains give insights into stellar nucleosynthesis and provide clues about the physical and chemical conditions during their formation as well as about interstellar exposure history and parent body processes. Since most presolar grains are less than 1 micrometer in diameter and represent only a few ppm of their host materials (e.g., meteorites or interplanetary dust particles), locating and studying these particles can be analytically challenging. Recently, we began using scanning Auger spectroscopy for the in situ elemental characterization of presolar grains and found that this technique, especially when paired with spatially matched NanoSIMS isotopic studies, can provide important insights that would be difficult to obtain with other analytical approaches. Here we discuss details of applying Auger spectroscopy to sub-micrometer sized geological samples and address practical issues such as sample preparation, measurement settings, data processing, and elemental quantification.

  6. In situ ion-beam-induced luminescence analysis for evaluating a micrometer-scale radio-photoluminescence glass dosimeter

    NASA Astrophysics Data System (ADS)

    Kawabata, Shunsuke; Kada, Wataru; Parajuli, Raj Kumar; Matsubara, Yoshinori; Sakai, Makoto; Miura, Kenta; Satoh, Takahiro; Koka, Masashi; Yamada, Naoto; Kamiya, Tomihiro; Hanaizumi, Osamu

    2016-06-01

    Micrometer-scale responses of radio-photoluminescence (RPL) glass dosimeters to focused ionized particle radiation were evaluated by combining ion-beam-induced luminescence (IBIL) and proton beam writing (PBW) using a 3 MeV focused proton microbeam. RPL phosphate glass dosimeters doped with ionic Ag or Cu activators at concentrations of 0.2 and 0.1% were fabricated, and their scintillation intensities were evaluated by IBIL spectroscopy under a PBW micropatterning condition. Compared with the Ag-doped dosimeter, the Cu-doped dosimeter was more tolerant of the radiation, while the peak intensity of its luminescence was lower, under the precise dose control of the proton microprobe. Proton-irradiated areas were successfully recorded using these dosimeters and their RPL centers were visualized under 375 nm ultraviolet light. The reproduction of the irradiated region by post-RPL imaging suggests that precise estimation of irradiation dose using microdosimeters can be accomplished by optimizing RPL glass dosimeters for various proton microprobe applications in organic material analysis and in micrometer-scale material modifications.

  7. Electrolyte-added one-pot synthesis for producing monodisperse, micrometer-sized silica particles up to 7 microm.

    PubMed

    Nakabayashi, Hiroyuki; Yamada, Akira; Noba, Masahiro; Kobayashi, Yoshio; Konno, Mikio; Nagao, Daisuke

    2010-05-18

    A facile one-pot synthesis to produce micrometer-sized silica particles with low polydispersity was examined in a semibatch process where an ethanol solution of tetraethyl orthosilicate (TEOS) was continuously supplied to another ethanol solution of water and ammonia containing an electrolyte of LiCl, NaCl, or KCl. Supply rates of the TEOS solution was ranged with the water and electrolyte concentrations, which indicated that the addition of KCl at a low water concentration was effective to increase size of silica particles in a micrometer range. Highly monodisperse silica particles with an average size of 6.6 microm were successfully produced at 3 mol/m(3) KCl and 5 kmol/m(3) water. The efficiency of KCl addition for producing the large particles is interpreted by the previously proposed nucleation and growth mechanism that expects rapid particle coagulation in early reaction stage for particles which have reduced surface potential by the adsorption of cations with a large ionic radius. It is confirmed from competitive growth reactions that the silica particle growth follows the reaction-limited mechanism even in the semibatch process.

  8. Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique

    NASA Astrophysics Data System (ADS)

    Wang, Yunpeng; Song, Haizheng; Sugiyama, Masakazu; Nakano, Yoshiaki; Shimogaki, Yukihiro

    2008-10-01

    The surface kinetic information of metalorganic vapor phase epitaxy (MOVPE) is difficult to obtain, because growth rate is normally limited by diffusional mass-transfer rate. In this study, by using a selective area growth (SAG) technique, the surface kinetics has been successfully clarified for InP and InAs growth. The temperature dependence of surface reaction rate constant (ks) was examined, and it revealed that for both compounds ks continuously increases with activation energies of 20.1 kJ/mol for InP and 15.0 kJ/mol for InAs. The sticking probability of indium species, converted from ks, was in the range of 0.54-0.79. This is two or three times that of gallium species during GaAs MOVPE. For indium-related binary compounds, the ks of InP is always larger than that of InAs. This kinetic information suggests that group V elements have a significant effect on the ks of III-V binary compounds. These preliminary results show that indium species have quite different reactivities in phosphorus and arsenic sites, which could be fundamental for the kinetic analysis of ternary and quaternary compounds, such as InAsP and InGaAsP.

  9. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    PubMed Central

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires. PMID:25050088

  10. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

    PubMed

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  11. Investigation of InP etching mechanisms in a Cl{sub 2}/H{sub 2} inductively coupled plasma by optical emission spectroscopy

    SciTech Connect

    Gatilova, L.; Bouchoule, S.; Guilet, S.; Chabert, P.

    2009-03-15

    Optical emission spectroscopy (OES) has been used in order to investigate the InP etching mechanisms in a Cl{sub 2}-H{sub 2} inductively coupled plasma. The authors have previously shown that anisotropic etching of InP could be achieved for a H{sub 2} percentage in the 35%-45% range where the InP etch rate also presents a local maximum [J. Vac. Sci. Technol. B 24, 2381 (2006)], and that anisotropic etching was due to an enhanced passivation of the etched sidewalls by a silicon oxide layer [J. Vac. Sci. Technol. B 26, 666 (2008)]. In this work, it is shown that this etching behavior is related to a maximum in the H atom concentration in the plasma. The possible enhancement of the sidewall passivation process in the presence of H is investigated by comparing OES measurements and etching results obtained for Cl{sub 2}-H{sub 2} and Cl{sub 2}-Ar gas mixtures.

  12. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    NASA Astrophysics Data System (ADS)

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-06-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor ( RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  13. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  14. Evaluating the Performance of the CPTEC-INPE/FCT-UNESP Troposphere Dynamic Model Using the VRS Concept

    NASA Astrophysics Data System (ADS)

    Alves, D. B.; Dalbelo, L. F.; Monico, J. F.; Sapucci, L. F.

    2007-05-01

    Nowadays, the use of Zenithal Tropospheric Delay (ZTD) prediction from Numeric Weather Prediction (NWP) models is a good alternative to minimize the effects of the troposphere in the radio frequency signs for real time and/or pos-processed applications. This process is denominated here after ZTD dynamic modeling. In Brazil, the procedure used to compute the ZTD by the NWP model was jointly developed by researchers from UNESP (São Paulo State University) and CPTEC (Center for Weather Forecasting and Climate Studies) of the INPE (National Institute for Space Research). The ZTD values are provided for all South America twice a day with predictions for a period of 66 hours. The database and the quality analysis are available by CPTEC-INPE in http:satelite.cptec.inpe.br/htmldocs/ztd/zenital.htm. In order to test the performance of the ZTD dynamic modeling in positioning applications, some experiments were carried out. Besides, the results obtained with dynamic modeling were compared with those obtained by Hopfield empirical model. These two tropospheric models were used to generate a VRS (Virtual Reference Station). In the VRS concept developed in this research, a reference station is generated near the user using data provided by a reference network station and atmospheric models. Therefore, the VRS data are not provided by a real receiver. But, the idea is that the VRS data resemble as much as possible a real receiver data at the same location. Therefore, the user has the possibility of using the VRS as if it were a real reference station in your proximities, and to accomplish the relative positioning with a single frequency receiver. This method was implemented in an software which has been developed at UNESP. In order to test the discussed method it was accomplished two experiments using data from two different networks: (a) Brazilian Continuous GPS Network (RBMC) and some extra stations; (b) GPS Active Network of West of São Paulo State. Using the first network

  15. Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film

    SciTech Connect

    Klopf, John

    2005-10-31

    Advancements in microfabrication techniques and thin film growth have led to complex integrated photonic devices, also known as optoelectronics. The performance of these devices relies upon precise control of the band gap and optical characteristics of the thin film structures, as well as a fundamental understanding of the photoexcited carrier thermalization, relaxation, and recombination processes. An optical pump-probe technique has been developed to measure the transient behavior of these processes on a sub-picosecond timescale. This method relies upon the generation of hot carriers by theabsorption of an intense ultrashort laser pulse (~ 135 fs). The transient changes in reflectance due to the pump pulse excitation are monitored using a weaker probe pulse. Control of the relative time delay between the pump and probe pulses allows for temporal measurements with resolution limited only by the pulse width. The transient change in reflectance is the result of a transient change in the carrier distribution. Observation of the reflectance response of indium phosphide (InP) and gallium arsenide (GaAs) films on a sub-picosecond timescale allows for detailed examination of thermalization and relaxation processes of the excited carriers. Longer timescales (> 100 ps) are useful for correlating the transient reflectance response to slower processes such as the diffusion and recombination of the photoexcited carriers. This research investigates the transient hot carrier processes in several InP and GaAs based films similar to those commonly used in optoelectronics. This technique is especially important as it provides a non-destructive means of evaluating these materials; whereas much of the research performed in this field has relied upon the measurement of transient changes in the transmission of transparent films. The process of preparing films that are transparent renders them unusable in functioning devices. This research should not only extend the understanding of

  16. High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

    NASA Technical Reports Server (NTRS)

    Rybicki, George; Weinberg, Irv; Scheiman, Dave; Vargas-Aburto, Carlos; Uribe, Roberto

    1995-01-01

    InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  17. STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION

    NASA Astrophysics Data System (ADS)

    Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Al-Douri, Y.

    2012-02-01

    The surface of materials plays an important role in their technological applications. In the interest to study the stability of materials and their behavior, we irradiate them by the electrons by using the electron spectroscopy such as the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS). These methods have proved their good sensitivity to study material surfaces. In this paper, we give some results about the effect of the electron beam irradiating the compounds InP, InSb, InPO4 and InxGa1-xAs. The III-V semiconductors InP and InSb seem to be sensitive to the electron irradiation. This breaks the chemical bonds between the element III and V which leads to an oxidation process at the surface. The AES and EELS spectroscopy are also used to characterize the oxide InPO4 whose thickness is about 10 Å grown on the substrate InP(100). The irradiation of the system InPO4/InP(100) by the electron beam of 5 keV energy leads to a structural change of the surface, so that there is breaking of chemical bonds between indium and phosphorus (In-P) and formation of new oxide other than InPO4. In this study we show an important result concerning the effect of the electron beam on the compound InxGa1-xAs by varying the parameter x to obtain In0.2Ga0.8As and In0.53Ga0.47As. It appears that the electron beam affects In0.2Ga0.8As too much in comparison with In0.53Ga0.47As. In the case of the irradiation of In0.2Ga0.8As, there is breaking of chemical bonds between indium and GaAs leading to formation of indium oxide associated to GaAs.

  18. Influence of Solar-Geomagnetic Disturbances on SABER Measurements of 4.3 Micrometer Emission and the Retrieval of Kinetic Temperature and Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Mertens, Christopher J.; Winick, Jeremy R.; Picard, Richard H.; Evans, David S.; Lopez-Puertas, Manuel; Wintersteiner, Peter P.; Xu, Xiaojing; Mlynczak, Martin G.; Russell, James M., III

    2008-01-01

    Thermospheric infrared radiance at 4.3 micrometers is susceptible to the influence of solar-geomagnetic disturbances. Ionization processes followed by ion-neutral chemical reactions lead to vibrationally excited NO(+) (i.e., NO(+)(v)) and subsequent 4.3 micrometer emission in the ionospheric E-region. Large enhancements of nighttime 4.3 m emission were observed by the TIMED/SABER instrument during the April 2002 and October-November 2003 solar storms. Global measurements of infrared 4.3 micrometer emission provide an excellent proxy to observe the nighttime E-region response to auroral dosing and to conduct a detailed study of E-region ion-neutral chemistry and energy transfer mechanisms. Furthermore, we find that photoionization processes followed by ion-neutral reactions during quiescent, daytime conditions increase the NO(+) concentration enough to introduce biases in the TIMED/SABER operational processing of kinetic temperature and CO2 data, with the largest effect at summer solstice. In this paper, we discuss solar storm enhancements of 4.3 micrometer emission observed from SABER and assess the impact of NO(+)(v) 4.3 micrometer emission on quiescent, daytime retrievals of Tk/CO2 from the SABER instrument.

  19. Composites comprising biologically-synthesized nanomaterials

    DOEpatents

    Curran, Seamus; Dias, Sampath; Blau, Werner; Wang, Jun; Oremland, Ronald S; Baesman, Shaun

    2013-04-30

    The present disclosure describes composite materials containing a polymer material and a nanoscale material dispersed in the polymer material. The nanoscale materials may be biologically synthesized, such as tellurium nanorods synthesized by Bacillus selenitireducens. Composite materials of the present disclosure may have optical limiting properties and find use in optical limiting devices.

  20. "Comments on Slavin": Synthesizing Causal Inferences

    ERIC Educational Resources Information Center

    Briggs, Derek C.

    2008-01-01

    When causal inferences are to be synthesized across multiple studies, efforts to establish the magnitude of a causal effect should be balanced by an effort to evaluate the generalizability of the effect. The evaluation of generalizability depends on two factors that are given little attention in current syntheses: construct validity and external…

  1. Synthesizing Regression Results: A Factored Likelihood Method

    ERIC Educational Resources Information Center

    Wu, Meng-Jia; Becker, Betsy Jane

    2013-01-01

    Regression methods are widely used by researchers in many fields, yet methods for synthesizing regression results are scarce. This study proposes using a factored likelihood method, originally developed to handle missing data, to appropriately synthesize regression models involving different predictors. This method uses the correlations reported…

  2. Shallow donorlike impurity states in n-type InP in magnetic field and under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Kadri, A.; Zitouni, K.; Konczewicz, L.; Aulombard, R. L.

    1987-04-01

    Hall-coefficient and transverse magnetoresistivity measurements performed in magnetic fields up to 18 T and hydrostatic pressures up to 16.5 kbar reveal several features of the behavior of shallow donorlike impurity states in n-type InP with impurity concentrations spanning the metal-insulator transition (2.2×1015 cm-3<~Nd-Na<~6.2×1016 cm-3). At atmospheric pressure, the variation of the binding energy of the shallow donors versus magnetic field was found to follow the predicted hydrogenic behavior with increasing effects of electron correlations (screening of the long-range Coulomb potential) and overlap of impurity wave functions as the donor concentration increased. With increasing pressure, the binding energy increased only slightly up to ~10 kbar, then much more strongly at 10 kbar<~P<~16.5 kbar. This behavior, which additionally depended on the actual magnetic field strength, showed very close similarities to effects observed earlier in other III-V compounds and suggests an increasing influence of the short-range localized impurity potential.

  3. A detailed study of the photo-injection annealing of thermally diffused InP solar cells

    NASA Technical Reports Server (NTRS)

    Walters, R. J.; Summers, G. P.; Bruening, J.

    1993-01-01

    A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

  4. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    NASA Astrophysics Data System (ADS)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2017-02-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  5. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    SciTech Connect

    Bouchoule, Sophie Cambril, Edmond; Guilet, Stephane; Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  6. Anisotropic indirect nuclear spin-spin coupling in InP: 31P CP NMR study under slow MAS condition

    NASA Astrophysics Data System (ADS)

    Iijima, Takahiro; Hashi, Kenjiro; Goto, Atsushi; Shimizu, Tadashi; Ohki, Shinobu

    2006-02-01

    The indirect nuclear spin-spin interaction tensor between neighboring 113,115In- 31P spins in Fe-doped InP semiconductor has been studied by 31P NMR spectra measured using CP of 113In → 31P and 115In → 31P under slow MAS condition. The isotropic ( Jiso) and anisotropic ( Janiso = 2/3[ J∥ - J⊥]) parts of the indirect interaction tensor are obtained from the spectral simulation. The acceptable combinations of these values are found to be as follows: ( Jiso, Janiso) = (224 ± 5, 500 ± 100 Hz) or (-224 ± 5, 2100 ± 100 Hz). Although, the coupling constants estimated in this study are slightly different from previously reported values of ∣ Jiso∣ = 350 Hz, Janiso = 1298 Hz [M. Engelsberg, R.E. Norberg, Phys. Rev. B 5 (1972) 3395] and of ∣ Jiso∣ = 225 ± 10, Janiso = (813 ± 50) or (1733 ± 50) Hz [M. Tomaselli et al., Phys. Rev. B 58 (1998) 8627], all of these has the trend that Janiso is rather larger than Jiso.

  7. Efficient Coupling of an Antenna-Enhanced nanoLED into an Integrated InP Waveguide.

    PubMed

    Eggleston, Michael S; Wu, Ming C

    2015-05-13

    Increasing power consumption in traditional on-chip metal interconnects has made optical links an attractive alternative. However, such a link is currently missing a fast, efficient, nanoscale light-source. Coupling nanoscale optical emitters to optical antennas has been shown to greatly increase their spontaneous emission rate and efficiency. Such a structure would be an ideal emitter for an on-chip optical link. However, there has never been a demonstration of an antenna-enhanced emitter coupled to a low-loss integrated waveguide. In this Letter we demonstrate an optical antenna-enhanced nanoLED coupled to an integrated InP waveguide. The nanoLEDs are comprised of a nanoridge of InGaAsP coupled to a gold antenna that exhibits a 36× enhanced rate of spontaneous emission. Coupling efficiencies as large as 70% are demonstrated into an integrated waveguide. Directional antennas also demonstrate direction emission down one direction of a waveguide with observed front-to-back ratios as high as 3:1.

  8. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    NASA Technical Reports Server (NTRS)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  9. First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

    NASA Astrophysics Data System (ADS)

    Petit, M.; Ould-Metidji, Y.; Robert, Ch.; Bideux, L.; Gruzza, B.; Matolin, V.

    2003-05-01

    The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar + ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.

  10. High-throughput fabrication of micrometer-sized compound parabolic mirror arrays by using parallel laser direct-write processing

    NASA Astrophysics Data System (ADS)

    Yan, Wensheng; Cumming, Benjamin P.; Gu, Min

    2015-07-01

    Micrometer-sized parabolic mirror arrays have significant applications in both light emitting diodes and solar cells. However, low fabrication throughput has been identified as major obstacle for the mirror arrays towards large-scale applications due to the serial nature of the conventional method. Here, the mirror arrays are fabricated by using a parallel laser direct-write processing, which addresses this barrier. In addition, it is demonstrated that the parallel writing is able to fabricate complex arrays besides simple arrays and thus offers wider applications. Optical measurements show that each single mirror confines the full-width at half-maximum value to as small as 17.8 μm at the height of 150 μm whilst providing a transmittance of up to 68.3% at a wavelength of 633 nm in good agreement with the calculation values.

  11. Efficient large volume electroporation of dendritic cells through micrometer scale manipulation of flow in a disposable polymer chip.

    PubMed

    Selmeczi, David; Hansen, Thomas S; Met, Ozcan; Svane, Inge Marie; Larsen, Niels B

    2011-04-01

    We present a hybrid chip of polymer and stainless steel designed for high-throughput continuous electroporation of cells in suspension. The chip is constructed with two parallel stainless steel mesh electrodes oriented perpendicular to the liquid flow. The relatively high hydrodynamic resistance of the micrometer sized holes in the meshes compared to the main channel enforces an almost homogeneous flow velocity between the meshes. Thereby, very uniform electroporation of the cells can be accomplished. Successful electroporation of 20 million human dendritic cells with mRNA is demonstrated. The performance of the chip is similar to that of the traditional electroporation cuvette, but without an upper limit on the number of cells to be electroporated. The device is constructed with two female Luer parts and can easily be integrated with other microfluidic components. Furthermore it is fabricated from injection molded polymer parts and commercially available stainless steel mesh, making it suitable for inexpensive mass production.

  12. Low-cost system for micrometer-resolution solar cell characterization by light beam-induced current mapping

    NASA Astrophysics Data System (ADS)

    Cossutta, H.; Taretto, K.; Troviano, M.

    2014-10-01

    Light-beam induced current (LBIC) mapping is an increasingly utilized characterization technique for laboratory-scale as well as industrial-scale solar cells, which measures the local solar cell photocurrent by point illumination. This contribution demonstrates the design and testing of an LBIC mapping device capable of measuring LBIC maps of solar cells using inexpensive materials. With a spatial resolution of 4 µm and an auto-focused beam spot size of about 2 µm, obtained from a standard CD/DVD pickup, high-resolution LBIC maps of thin-film solar cells are obtained. The system was demonstrated by measuring LBIC maps on thin-film solar cells, revealing significant, micrometer-sized photocurrent heterogeneities that are otherwise unseen when using typical commercial LBIC systems with lower resolution.

  13. Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO3/SrTiO3 Nanowires

    NASA Astrophysics Data System (ADS)

    Tomczyk, Michelle; Cheng, Guanglei; Lee, Hyungwoo; Lu, Shicheng; Annadi, Anil; Veazey, Joshua P.; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Eom, Chang-Beom; Levy, Jeremy

    2016-08-01

    High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO3/SrTiO3 -based quantum dots reveal the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here, we report evidence for the micrometer-scale ballistic transport of electron pairs in quasi-1D LaAlO3/SrTiO3 nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at a zero magnetic field). Above a critical magnetic field Bp, the electron pairs unbind and the conductance oscillations shift with the magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

  14. Monitoring micrometer-scale collagen organization in rat-tail tendon upon mechanical strain using second harmonic microscopy.

    PubMed

    Goulam Houssen, Y; Gusachenko, I; Schanne-Klein, M-C; Allain, J-M

    2011-07-28

    We continuously monitored the microstructure of a rat-tail tendon during stretch/relaxation cycles. To that purpose, we implemented a new biomechanical device that combined SHG imaging and mechanical testing modalities. This multi-scale experimental device enabled simultaneous visualization of the collagen crimp morphology at the micrometer scale and measurement of macroscopic strain-stress response. We gradually increased the ultimate strain of the cycles and showed that preconditioning mostly occurs in the first stretching. This is accompanied by an increase of the crimp period in the SHG image. Our results indicate that preconditioning is due to a sliding of microstructures at the scale of a few fibrils and smaller, that changes the resting length of the fascicle. This sliding can reverse on long time scales. These results provide a proof of concept that continuous SHG imaging performed simultaneously with mechanical assay allows analysis of the relationship between macroscopic response and microscopic structure of tissues.

  15. Dynamic templating: a large area processing route for the assembly of periodic arrays of sub-micrometer and nanoscale structures

    NASA Astrophysics Data System (ADS)

    Farzinpour, Pouyan; Sundar, Aarthi; Gilroy, Kyle D.; Eskin, Zachary E.; Hughes, Robert A.; Neretina, Svetlana

    2013-02-01

    A substrate-based templated assembly route has been devised which offers large-area, high-throughput capabilities for the fabrication of periodic arrays of sub-micrometer and nanometer-scale structures. The approach overcomes a significant technological barrier to the widespread use of substrate-based templated assembly by eliminating the need for periodic templates having nanoscale features. Instead, it relies upon the use of a dynamic template with dimensions that evolve in time from easily fabricated micrometer dimensions to those on the nanoscale as the assembly process proceeds. The dynamic template consists of a pedestal of a sacrificial material, typically antimony, upon which an ultrathin layer of a second material is deposited. When heated, antimony sublimation results in a continuous reduction in template size where the motion of the sublimation fronts direct the diffusion of atoms of the second material to a predetermined location. The route has broad applicability, having already produced periodic arrays of gold, silver, copper, platinum, nickel, cobalt, germanium and Au-Ag alloys on substrates as diverse as silicon, sapphire, silicon-carbide, graphene and glass. Requiring only modest levels of instrumentation, the process provides an enabling route for any reasonably equipped researcher to fabricate periodic arrays that would otherwise require advanced fabrication facilities.A substrate-based templated assembly route has been devised which offers large-area, high-throughput capabilities for the fabrication of periodic arrays of sub-micrometer and nanometer-scale structures. The approach overcomes a significant technological barrier to the widespread use of substrate-based templated assembly by eliminating the need for periodic templates having nanoscale features. Instead, it relies upon the use of a dynamic template with dimensions that evolve in time from easily fabricated micrometer dimensions to those on the nanoscale as the assembly process

  16. Square-micrometer-sized, free-standing organometallic sheets and their square-centimeter-sized multilayers on solid substrates.

    PubMed

    Zheng, Zhikun; Ruiz-Vargas, Carlos S; Bauer, Thomas; Rossi, Antonella; Payamyar, Payam; Schütz, Andri; Stemmer, Andreas; Sakamoto, Junji; Schlüter, A Dieter

    2013-11-01

    Oligofunctional terpyridine-based monomers are spread at an air/water interface, where they are connected with transition metal salts such as Fe(II) into mechanically coherent monolayer sheets of macroscopic dimension. The conversions of these processes are determined by XPS for several monomer/metal ion combinations. The sheets are transferred onto TEM grids, the 20 × 20 square micrometer sized holes of which can be spanned. AFM indentation experiments provide in-plane elastic moduli which are compared with naturally occurring sheets such as graphene. The new organometallic sheets are also used to create multilayer assemblies on square centimeter length scales on solid substrates. Finally some directions are provided where this research can lead to in future and where its application potential lies.

  17. Thermal emission measurements 2000-400/cm (5-25 micrometers) of Hawaiian palagonitic soils and their implications for Mars

    NASA Technical Reports Server (NTRS)

    Roush, Ted L.; Bell, James F., III

    1995-01-01

    The thermal emision of two palagonitic soils, common visible and near infrared spectral analogs for bright soils on Mars, was measured over the wavelength range of 5 to 25 micrometers (2000 to 400/cm) for several partical size separates. All spectra exhibit emissivity features due to vibrations associated with H2O and SiO. The maximum variability of emissivity is approximately 20% in the short wavelength region (5 to 6.5 mirometers, 2000 to 1500/cm), and is more subdued, less than 4%, at longer wavelengths. The strengths of features present in the infrared spectra of Mars cannot be solely provided by emissivity variations of palagonite; some other material or mechanism must provide additional absorptions(s).

  18. Towards a better understanding of dielectric barrier discharges in ferroelectrets: Paschen breakdown fields in micrometer sized voids

    NASA Astrophysics Data System (ADS)

    Harris, Scott; Mellinger, Axel

    2014-04-01

    Charged cellular polypropylene foams (i.e., ferro- or piezoelectrets) demonstrate high piezoelectric activity upon being electrically charged. When an external electric field is applied, dielectric barrier discharges (DBDs) occur, resulting in a separation of charges which are subsequently deposited on dielectric surfaces of internal micrometer sized voids. This deposited space charge is responsible for the piezoelectric activity of the material. Previous studies have indicated charging fields larger than predicted by Townsend's model of Paschen breakdown applied to a multilayered electromechanical model; a discrepancy which prompted the present study. The actual breakdown fields for micrometer sized voids were determined by constructing single cell voids using polypropylene spacers with heights ranging from 8 to 75 μm, "sandwiched" between two polypropylene dielectric barriers and glass slides with semi-transparent electrodes. Subsequently, a bipolar triangular charging waveform with a peak voltage of 6 kV was applied to the samples. The breakdown fields were determined by monitoring the emission of light due to the onset of DBDs using an electron multiplying CCD camera. The breakdown fields at absolute pressures from 101 to 251 kPa were found to be in good agreement with the standard Paschen curves. Additionally, the magnitude of the light emission was found to scale linearly with the amount of gas, i.e., the height of the voids. Emissions were homogeneous over the observed regions of the voids for voids with heights of 25 μm or less and increasingly inhomogeneous for void heights greater than 40 μm at high electric fields.

  19. Syntheses of Novel Nitrogen and Phosphorus Heterocycles.

    DTIC Science & Technology

    2014-09-26

    Chemicals and Materials Research Department, Ultrasystems, Inc. under Contract F49620-82-C-0021, "Syntheses of Novel Nitrogen and Phosphorus Hetero- * cycles ...ADl-NISS9 449 SYNTHESES OF NOVEL NITROGEN AND PHOSPHORUS HETEROCYCLES In (U) ULTRRSYSTENS INC IRVINE CR K L PRCIOREK ET RL. 26 RPR 85 SN-209?-F RFOSR...MICROCOPY RESOLUTION TEST CHART NATIONAL BURE&U OF STAOACS-963-A SR-I"I" s, -Ŕ 500 4 SYNTHESES OF NOVEL NITROGEN AND PHOSPHORUS HETEROCYCLES Contract No

  20. Thermoelectric Properties of Solution Synthesized Nanostructured Materials.

    PubMed

    Finefrock, Scott W; Yang, Haoran; Fang, Haiyu; Wu, Yue

    2015-01-01

    Thermoelectric nanocomposites made by solution synthesis and compression of nanostructured chalcogenides could potentially be low-cost, scalable alternatives to traditional solid-state synthesized materials. We review the progress in this field by comparing the power factor and/or the thermoelectric figure of merit, ZT, of four classes of materials: (Bi,Sb)2(Te,Se)3, PbTe, ternary and quaternary copper chalcogenides, and silver chalcogenides. We also discuss the thermal conductivity reduction associated with multiphased nanocomposites. The ZT of the best solution synthesized materials are, in several cases, shown to be equal to or greater than the corresponding bulk materials despite the generally reduced mobility associated with solution synthesized nanocomposites. For the solution synthesized materials with the highest performance, the synthesis and processing conditions are summarized to provide guidance for future work.