Overexpression of the Wheat Expansin Gene TaEXPA2 Improved Seed Production and Drought Tolerance in Transgenic Tobacco Plants

PubMed Central

Chen, Yanhui; Han, Yangyang; Zhang, Meng; Zhou, Shan; Kong, Xiangzhu; Wang, Wei

2016-01-01

Expansins are cell wall proteins that are grouped into two main families, α-expansins and β-expansins, and they are implicated in the control of cell extension via the disruption of hydrogen bonds between cellulose and matrix glucans. TaEXPA2 is an α-expansin gene identified in wheat. Based on putative cis-regulatory elements in the TaEXPA2 promoter sequence and the expression pattern induced when polyethylene glycol (PEG) is used to mimic water stress, we hypothesized that TaEXPA2 is involved in plant drought tolerance and plant development. Through transient expression of 35S::TaEXPA2-GFP in onion epidermal cells, TaEXPA2 was localized to the cell wall. Constitutive expression of TaEXPA2 in tobacco improved seed production by increasing capsule number, not seed size, without having any effect on plant growth patterns. The transgenic tobacco exhibited a significantly greater tolerance to water-deficiency stress than did wild-type (WT) plants. We found that under drought stress, the transgenic plants maintained a better water status. The accumulated content of osmotic adjustment substances, such as proline, in TaEXPA2 transgenic plants was greater than that in WT plants. Transgenic plants also displayed greater antioxidative competence as indicated by their lower malondialdehyde (MDA) content, relative electrical conductivity, and reactive oxygen species (ROS) accumulation than did WT plants. This result suggests that the transgenic plants suffer less damage from ROS under drought conditions. The activities of some antioxidant enzymes as well as expression levels of several genes encoding key antioxidant enzymes were higher in the transgenic plants than in the WT plants under drought stress. Collectively, our results suggest that ectopic expression of the wheat expansin gene TaEXPA2 improves seed production and drought tolerance in transgenic tobacco plants. PMID:27073898

Orientation dependences of atomic structures in chemically heterogeneous Cu{sub 50}Ta{sub 50}/Ta glass-crystal interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guiqin; Gao, Xiaoze; Li, Jinfu

2015-01-07

Molecular dynamics simulations based on an angular-dependent potential were performed to examine the structural properties of chemically heterogeneous interfaces between amorphous Cu{sub 50}Ta{sub 50} and crystalline Ta. Several phenomena, namely, layering, crystallization, intermixing, and composition segregation, were observed in the Cu{sub 50}Ta{sub 50} region adjacent to the Ta layers. These interfacial behaviors are found to depend on the orientation of the underlying Ta substrate: Layering induced by Ta(110) extends the farthest into Cu{sub 50}Ta{sub 50}, crystallization in the Cu{sub 50}Ta{sub 50} region is most significant for interface against Ta(100), while inter-diffusion is most pronounced for Ta(111). It turns out thatmore » the induced layering behavior is dominated by the interlayer distances of the underlying Ta layers, while the degree of inter-diffusion is governed by the openness of the Ta crystalline layers. In addition, composition segregations are observed in all interface models, corresponding to the immiscible nature of the Cu-Ta system. Furthermore, Voronoi polyhedra 〈0,5,2,6〉 and 〈0,4,4,6〉 are found to be abundant in the vicinity of the interfaces for all models, whose presence is believed to facilitate the structural transition between amorphous and body centered cubic.« less

Adipose tissue-derived stem cell-seeded small intestinal submucosa for tunica albuginea grafting and reconstruction

PubMed Central

Ma, Limin; Yang, Yijun; Sikka, Suresh C.; Kadowitz, Philip J.; Ignarro, Louis J.; Abdel-Mageed, Asim B.; Hellstrom, Wayne J. G.

2012-01-01

Porcine small intestinal submucosa (SIS) has been widely used in tunica albuginea (TA) reconstructive surgery. Adipose tissue-derived stem cells (ADSCs) can repair damaged tissue, augment cellular differentiation, and stimulate release of multiple growth factors. The aim of this rat study was to assess the feasibility of seeding ADSCs onto SIS grafts for TA reconstruction. Here, we demonstrate that seeding syngeneic ADSCs onto SIS grafts (SIS-ADSC) resulted in significant cavernosal tissue preservation and maintained erectile responses, similar to controls, in a rat model of bilateral incision of TA, compared with sham-operated animals and rats grafted with SIS graft (SIS) alone. In addition to increased TGF-β1 and FGF-2 expression levels, cross-sectional studies of the rat penis with SIS and SIS-ADSC revealed mild to moderate fibrosis and an increase of 30% and 40% in mean diameter in flaccid and erectile states, respectively. SIS grafting induced transcriptional up-regulation of iNOS and down-regulation of endothelial NOS, neuronal NOS, and VEGF, an effect that was restored by seeding ADCSs on the SIS graft. Taken together, these data show that rats undergoing TA incision with autologous SIS-ADSC grafts maintained better erectile function compared with animals grafted with SIS alone. This study suggests that SIS-ADSC grafting can be successfully used for TA reconstruction procedures and can restore erectile function. PMID:22308363

Expression and responses to dehydration and salinity stresses of V-PPase gene members in wheat.

PubMed

Wang, Yuezhi; Xu, Haibin; Zhang, Guangxiang; Zhu, Huilan; Zhang, Lixia; Zhang, Zhengzhi; Zhang, Caiqin; Ma, Zhengqiang

2009-12-01

Vacuolar H(+)-translocating pyrophosphatase (V-PPase) is a key enzyme related to plant growth as well as abiotic stress tolerance. In this work, wheat V-PPase genes TaVP1, TaVP2 and TaVP3 were identified. TaVP1 and TaVP2 are more similar to each other than to TaVP3. Their deduced polypeptide sequences preserve the topological structure and essential residues of V-PPases. Phylogenetic studies suggested that monocot plants, at least monocot grasses, have three VP paralogs. TaVP3 transcripts were only detected in developing seeds, and no TaVP2 transcripts were found in germinating seeds. TaVP2 was mainly expressed in shoot tissues and down-regulated in leaves under dehydration. Its expression was up-regulated in roots under high salinity. TaVP1 was relatively more ubiquitously and evenly expressed than TaVP2. Its expression level in roots was highest among the tissues examined, and was inducible by salinity stress. These results indicated that the V-PPase gene paralogs in wheat are differentially regulated spatially and in response to dehydration and salinity stresses. 2009 Institute of Genetics and Developmental Biology and the Genetics Society of China. Published by Elsevier Ltd. All rights reserved.

Nano suboxide layer generated in Ta{sub 2}O{sub 5} by Ar{sup +} ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, W. D., E-mail: song-wendong@dsi.a-star.edu.sg, E-mail: ying-ji-feng@dsi.a-star.edu.sg; Ying, J. F., E-mail: song-wendong@dsi.a-star.edu.sg, E-mail: ying-ji-feng@dsi.a-star.edu.sg; He, W.

2015-01-19

Ta{sub 2}O{sub 5}/TaO{sub x} heterostructure has become a leading oxide layer in memory cells and/or a bidirectional selector for resistive random access memory (RRAM). Although atomic layer deposition (ALD) was found to be uniquely suitable for depositing uniform and conformal films on complex topographies, it is hard to use ALD to grow suboxide TaO{sub x} layer. In this study, tantalum oxide films with a composition of Ta{sub 2}O{sub 5} were grown by ALD. Using Ar{sup +} ion irradiation, the suboxide was formed in the top layer of Ta{sub 2}O{sub 5} films by observing the Ta core level shift toward lowermore » binding energy with angle-resolved X-ray photoelectron spectroscopy. By controlling the energy and irradiation time of an Ar{sup +} ion beam, Ta{sub 2}O{sub 5}/TaO{sub x} heterostructure can be reliably produced on ALD films, which provides a way to fabricate the critical switching layers of RRAM.« less

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

NASA Astrophysics Data System (ADS)

Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

2013-03-01

Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

Characterization and Expression Analysis of Phytoene Synthase from Bread Wheat (Triticum aestivum L.)

PubMed Central

Flowerika; Alok, Anshu; Kumar, Jitesh; Thakur, Neha; Pandey, Ashutosh; Pandey, Ajay Kumar; Upadhyay, Santosh Kumar; Tiwari, Siddharth

2016-01-01

Phytoene synthase (PSY) regulates the first committed step of the carotenoid biosynthetic pathway in plants. The present work reports identification and characterization of the three PSY genes (TaPSY1, TaPSY2 and TaPSY3) in wheat (Triticum aestivum L.). The TaPSY1, TaPSY2, and TaPSY3 genes consisted of three homoeologs on the long arm of group 7 chromosome (7L), short arm of group 5 chromosome (5S), and long arm of group 5 chromosome (5L), respectively in each subgenomes (A, B, and D) with a similarity range from 89% to 97%. The protein sequence analysis demonstrated that TaPSY1 and TaPSY3 retain most of conserved motifs for enzyme activity. Phylogenetic analysis of all TaPSY revealed an evolutionary relationship among PSY proteins of various monocot species. TaPSY derived from A and D subgenomes shared proximity to the PSY of Triticum urartu and Aegilops tauschii, respectively. The differential expression of TaPSY1, TaPSY2, and TaPSY3 in the various tissues, seed development stages, and stress treatments suggested their role in plant development, and stress condition. TaPSY3 showed higher expression in all tissues, followed by TaPSY1. The presence of multiple stress responsive cis-regulatory elements in promoter region of TaPSY3 correlated with the higher expression during drought and heat stresses has suggested their role in these conditions. The expression pattern of TaPSY3 was correlated with the accumulation of β-carotene in the seed developmental stages. Bacterial complementation assay has validated the functional activity of each TaPSY protein. Hence, TaPSY can be explored in developing genetically improved wheat crop. PMID:27695116

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

Silicide formation process of Er films with Ta and TaN capping layers.

PubMed

Choi, Juyun; Choi, Seongheum; Kim, Jungwoo; Na, Sekwon; Lee, Hoo-Jeong; Lee, Seok-Hee; Kim, Hyoungsub

2013-12-11

The phase development and defect formation during the silicidation reaction of sputter-deposited Er films on Si with ∼20-nm-thick Ta and TaN capping layers were examined. TaN capping effectively prevented the oxygen incorporation from the annealing atmosphere, which resulted in complete conversion to the ErSi2-x phase. However, significant oxygen penetration through the Ta capping layer inhibited the ErSi2-x formation, and incurred the growth of several Er-Si-O phases, even consuming the ErSi2-x layer formed earlier. Both samples produced a number of small recessed defects at an early silicidation stage. However, large rectangular or square-shaped surface defects, which were either pitlike or pyramidal depending on the capping layer identity, were developed as the annealing temperature increased. The origin of different defect generation mechanisms was suggested based on the capping layer-dependent silicidation kinetics.

Color tone and interfacial microstructure of white oxide layer on commercially pure Ti and Ti-Nb-Ta-Zr alloys

NASA Astrophysics Data System (ADS)

Miura-Fujiwara, Eri; Mizushima, Keisuke; Watanabe, Yoshimi; Kasuga, Toshihiro; Niinomi, Mitsuo

2014-11-01

In this study, the relationships among oxidation condition, color tone, and the cross-sectional microstructure of the oxide layer on commercially pure (CP) Ti and Ti-36Nb-2Ta-3Zr-0.3O were investigated. “White metals” are ideal metallic materials having a white color with sufficient strength and ductility like a metal. Such materials have long been sought for in dentistry. We have found that the specific biomedical Ti alloys, such as CP Ti, Ti-36Nb-2Ta-3Zr-0.3O, and Ti-29Nb-13Ta-4.6Zr, form a bright yellowish-white oxide layer after a particular oxidation heat treatment. The brightness L* and yellowness +b* of the oxide layer on CP Ti and Ti-36Nb-2Ta-3Zr-0.3O increased with heating time and temperature. Microstructural observations indicated that the oxide layer on Ti-29Nb-13Ta-4.6Zr and Ti-36Nb-2Ta-3Zr-0.3O was dense and firm, whereas a piecrust-like layer was formed on CP Ti. The results obtained in this study suggest that oxide layer coating on Ti-36Nb-2Ta-3Zr-0.3O is an excellent technique for dental applications.

Plasma surface tantalum alloying on titanium and its corrosion behavior in sulfuric acid and hydrochloric acid

NASA Astrophysics Data System (ADS)

Wei, D. B.; Chen, X. H.; Zhang, P. Z.; Ding, F.; Li, F. K.; Yao, Z. J.

2018-05-01

An anti-corrosion Ti-Ta alloy coating was prepared on pure titanium surface by double glow plasma surface alloying technology. Electrochemical corrosion test was applied to test the anti-corrosion property of Ti-Ta alloy layer. The microstructure and the phase composition of Ti-Ta alloy coating were detected before and after corrosion process by means of scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results showed that the Ta-Ti alloy layer has a thickness of about 13-15 μm, which is very dense without obvious defects such as pores or cracks. The alloy layer is composed mainly of β-Ta and α-Ti. The Ta alloy layer improves the anti-corrosion property of pure titanium. A denser and more durable TiO2 formed on the surface Ta-Ti alloy layer after immersing in strong corrosive media may account for the excellent corrosion resistant.

Structural and electronic investigations of PbTa4O11 and BiTa7O19 constructed from α-U3O8 types of layers

NASA Astrophysics Data System (ADS)

Boltersdorf, Jonathan; Maggard, Paul A.

2015-09-01

The PbTa4O11 and BiTa7O19 phases were prepared by ion-exchange and solid-state methods, respectively, and their structures were characterized by neutron time-of-flight diffraction and Rietveld refinement methods (PbTa4O11, R 3 (No. 146), a=6.23700(2) Å, c=36.8613(1) Å; BiTa7O19, P 6 bar c 2 (No. 188), a=6.2197(2) Å, c=20.02981(9) Å). Their structures are comprised of layers of TaO6 octahedra surrounded by three 7-coordinate Pb(II) cations or two 8-coordinate Bi(III) cations. These layers alternate down the c-axis with α-U3O8 types of single and double TaO7 pentagonal bipyramid layers. In contrast to earlier studies, both phases are found to crystallize in noncentrosymmetric structures. Symmetry-lowering structural distortions within PbTa4O11, i.e. R 3 bar c →R3, are found to be a result of the displacement of the Ta atoms within the TaO7 and TaO6 polyhedra, towards the apical and facial oxygen atoms, respectively. In BiTa7O19, relatively lower reaction temperatures leads to an ordering of the Bi/Ta cations within a lower-symmetry structure, i.e., P63/mcm→ P 6 bar c 2 . In the absence of Bi/Ta site disorder, the Ta-O-Ta bond angles decrease and the Ta-O bond distances increase within the TaO7 double layers. Scanning electron microscopy images reveal two particle morphologies for PbTa4O11, hexagonal rods and finer irregularly-shaped particles, while BiTa7O19 forms as aggregates of irregularly-shaped particles. Electronic-structure calculations confirm the highest-energy valence band states are comprised of O 2p-orbitals and the respective Pb 6s-orbital and Bi 6s-orbital contributions. The lowest-energy conduction band states are composed of Ta 5d-orbital contributions that are delocalized over the TaO6 octahedra and layers of TaO7 pentagonal bipyramids. The symmetry-lowering distortions in the PbTa4O11 structure, and the resulting effects on its electronic structure, lead to its relatively higher photocatalytic activity compared to similar structures without these distortions.

Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

NASA Astrophysics Data System (ADS)

Chen, G. S.; Chen, S. T.

2000-06-01

Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100 °C greater than that of the Ta67N33 diffusion barriers. Moreover, multilayered films, formed by alternately stacking the Ta67N33 and Ta64N36 layers with an optimized bilayer thickness (λ) of 10 nm, can dramatically reduce the intrinsic compressive stress to only 0.7 GPa and undergo high-temperature annealing without crystallization. Therefore, the Ta67N33/Ta64N36 multilayered films exhibit a much better barrier performance than the highly crystallization-resistant Ta64N36 single-layered films.

Czochralski growth of 2 in. Ca3Ta(Ga,Al)3Si2O14 single crystals for piezoelectric applications

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Shoji, Yasuhiro; Ohashi, Yuji; Yokota, Yuui; Chani, Valery I.; Kitahara, Masanori; Kudo, Tetsuo; Kamada, Kei; Kurosawa, Shunsuke; Medvedev, Andrey; Kochurikhin, Vladimir

2016-10-01

Growth of 2-in. diameter Al-substituted Ca3TaGa3Si2O14 crystals by Czochralski method is reported. The crystals were grown from the melt of Ca3TaGa1.5Al1.5Si2O14 composition and had langasite structure. No inclusions of secondary phases were detected in these crystals. The Ca3Ta(Ga,Al)3Si2O14 mixed crystals produced using non-substituted Ca3TaGa3Si2O14 seeds were defective. They had cracks and/or poly-crystalline structure. However, those grown on the seed of approximately Ca3TaGa1.5Al1.5Si2O14 composition were defect-free. Phase diagram of the Ca3TaGa3Si2O14-Ca3TaAl3Si2O14 pseudo-binary system and segregation phenomenon are discussed in some details. Homogeneity of the crystals was evaluated by measuring 2D-mapping of leaky surface acoustic wave (LSAW) velocities for Y-cut Ca3TaGa1.5Al1.5Si2O14 substrate. Although some inhomogeneities were observed due to slight variations in chemical composition, the crystal had acceptable homogeneity for applications in acoustic wave devices exhibiting the LSAW velocity variation within ±0.048%.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and the strain is relaxed through hillock/island formation instead. The kinetics-limiting parameters for these relaxation modes are identified and used to simulate their kinetics, and a deformation map is then constructed to delineate the conditions under which each mode would prevail. Such a deformation map would prove useful when one seeks to optimize the thermal stability or other mechanical properties in any ultra-thin film system.

Structure and Electrical Conductivity of AgTaS 3

NASA Astrophysics Data System (ADS)

Kim, Changkeun; Yun, Hoseop; Lee, Youngju; Shin, Heekyoon; Liou, Kwangkyoung

1997-09-01

Single crystals of the compound AgTaS 3have been prepared through reactions of the elements with halide mixtures. The structure of AgTaS 3has been analyzed by single-crystal X-ray diffraction methods. AgTaS 3crystallizes in the space group D172h- Cmcmof the orthorhombic system with four formula units in a cell of dimensions a=3.378(2), b=14.070(5), c=7.756(3) Å. The structure of AgTaS 3consists of two-dimensional 2∞[TaS -3] layers separated by Ag +cations. The layer is composed of Ta-centered bicapped trigonal prisms stacked on top of each other by sharing triangular faces. These chains are linked to form the infinite two-dimensional 2∞[TaS -3] slabs. These layers are held together through van der Waals interactions, and Ag +ions reside in the distorted octahedral sites between the layers. The temperature dependence of the electrical conductivity along the needle axis of AgTaS 3shows the typical behavior of an extrinsic semiconductor.

Transparent ALD-grown Ta2O5 protective layer for highly stable ZnO photoelectrode in solar water splitting.

PubMed

Li, Chengcheng; Wang, Tuo; Luo, Zhibin; Zhang, Dong; Gong, Jinlong

2015-04-30

This communication describes a highly stable ZnO/Ta2O5 photoanode with Ta2O5 deposited by atomic layer deposition. The ultrathin Ta2O5 protective layer prevents corrosion of ZnO and reduces surface carrier recombination, leading to a nearly two-fold increase of photo-conversion efficiency. The transparency of Ta2O5 to sunlight is identified as the main reason for the excellent stability of the photoelectrode for 5 hours.

Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics.

PubMed

Lin, Yu-De; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Yu-Sheng; Rahaman, Sk Ziaur; Tsai, Kan-Hsueh; Hsu, Chien-Hua; Chen, Wei-Su; Wang, Pei-Hua; King, Ya-Chin; Lin, Chrong Jung

2017-12-01

A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.

Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

NASA Astrophysics Data System (ADS)

Li, Minghua; Shi, Hui; Dong, Yuegang; Ding, Lei; Han, Gang; Zhang, Yao; Liu, Ye; Yu, Guanghua

2017-10-01

The anisotropic magnetoresistance (AMR) and magnetic properties of NiFe films can be remarkably enhanced via CoFeB layer. In the case of an ultrathin NiFe film having a Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta structure, the CoFeB/MgO layers suppressed the formation of magnetic dead layers and the interdiffusions and interface reactions between the NiFe and Ta layers. The AMR reached a maximum value of 3.56% at 450 °C. More importantly, a single NiFe (1 1 1) peak can be formed resulting in higher AMR values for films having CoFeB layer. This enhanced AMR also originated from the significant specular reflection of electrons owing to the crystalline MgO layer, together with the sharp interfaces with the NiFe layer. These factors together resulted in higher AMR and improved magnetic properties.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

Magneto-optical properties of CoFeB ultrathin films: Effect of Ta buffer and capping layer

NASA Astrophysics Data System (ADS)

Husain, Sajid; Gupta, Nanhe Kumar; Barwal, Vineet; Chaudhary, Sujeet

2018-05-01

The effect of adding Ta as a capping and buffer layer on ultrathin CFB(Co60Fe20B20) thin films has been investigated by magneto-optical Kerr effect. A large difference in the coercivity and saturation field is observed between the single layer CFB(2nm) and Ta(5nm)/CFB(2nm)/Ta(2nm) trilayer structure. In particular, the in-plane anisotropy energy is found to be 90kJ/m3 on CFB(2nm) and 2.22kJ/m3 for Ta(5nm)/CFB(2nm)/Ta(2nm) thin films. Anisotropy energy further reduced to 0.93kJ/m3 on increasing the CFB thinness in trilayer structure i.e., Ta(5nm)/CFB(4nm)/Ta(2nm). Using VSM measurement, the saturation magnetization is found to be 1230±50 kA/m. Low coercivity and anisotropy energy in capped and buffer layer thin films envisage the potential of employing CFB for low field switching applications of the spintronic devices.

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.

Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface ofmore » the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.« less

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Toward Exploring the Structure of Monolayer to Few-layer TaS2 by Efficient Ultrasound-free Exfoliation

NASA Astrophysics Data System (ADS)

Hu, Yiwei; Hao, Qiaoyan; Zhu, Baichuan; Li, Biao; Gao, Zhan; Wang, Yan; Tang, Kaibin

2018-01-01

Tantalum disulfide nanosheets have attracted great interest due to its electronic properties and device applications. Traditional solution-ased ultrasonic process is limited by ultrasound which may cause the disintegration into submicron-sized flake. Here, an efficient multi-step intercalation and ultrasound-free process has been successfully used to exfoliate 1T-TaS2. The obtained TaS2 nanosheets reveal an average thickness of 3 nm and several micrometers in size. The formation of few-layer TaS2 nanosheets as well as monolayer TaS2 sheets is further confirmed by atomic force microscopy images. The few-layer TaS2 nanosheets remain the 1T structure, whereas monolayer TaS2 sheets show lattice distortion and may adopt the 1H-like structure with trigonal prism coordination.

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

PubMed Central

Hajiyev, Parviz; Cong, Chunxiao; Qiu, Caiyu; Yu, Ting

2013-01-01

In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically thin layers of 2H-TaSe2 are characterized by micro-Raman spectroscopy. Room temperature Raman measurements demonstrate MoS2-like spectral features, which are reliable for thickness determination. E1g mode, usually forbidden in backscattering Raman configuration is observed in the supported TaSe2 layers while disappears in the suspended layers, suggesting that this mode may be enabled because of the symmetry breaking induced by the interaction with the substrate. A systematic in-situ low temperature Raman study, for the first time, reveals the existence of incommensurate charge density wave phase transition in single and double-layered 2H-TaSe2 as reflected by a sudden softening of the second-order broad Raman mode resulted from the strong electron-phonon coupling (Kohn anomaly). PMID:24005335

Study on electrical defects level in single layer two-dimensional Ta2O5

NASA Astrophysics Data System (ADS)

Dahai, Li; Xiongfei, Song; Linfeng, Hu; Ziyi, Wang; Rongjun, Zhang; Liangyao, Chen; David, Wei Zhang; Peng, Zhou

2016-04-01

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta2O5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta2O5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2O5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2O5, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5. Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

NASA Astrophysics Data System (ADS)

Chatterjee, Jyotirmoy; Sousa, Ricardo C.; Perrissin, Nicolas; Auffret, Stéphane; Ducruet, Clarisse; Dieny, Bernard

2017-05-01

The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms.

PubMed

Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan

2017-01-05

Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials.

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms

NASA Astrophysics Data System (ADS)

Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan

2017-01-01

Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials.

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms

PubMed Central

Lao, Yuanxia; Hu, Shuanglin; Shi, Yunlong; Deng, Yu; Wang, Fei; Du, Hao; Zhang, Haibing; Wang, Yuan

2017-01-01

Materials with a high density of heterophase interfaces, which are capable of absorbing and annihilating radiation-induced point defects, can exhibit a superior radiation tolerance. In this paper, we investigated the interaction behaviors of point defects and heterophase interfaces by implanting helium atoms into the ZrN/TaN multilayered nanofilms. It was found that the point defect-interface interaction on the two sides of the ZrN/TaN interface was asymmetric, likely due to the difference in the vacancy formation energies of ZrN and TaN. The helium bubbles could migrate from the ZrN layers into the TaN layers through the heterophase interfaces, resulting in a better crystallinity of the ZrN layers and a complete amorphization of the TaN layers. The findings provided some clues to the fundamental behaviors of point defects near the heterophase interfaces, which make us re-examine the design rules of advanced radiation-tolerant materials. PMID:28053307

Molecular cloning, phylogenetic analysis, and expression profiling of endoplasmic reticulum molecular chaperone BiP genes from bread wheat (Triticum aestivum L.).

PubMed

Zhu, Jiantang; Hao, Pengchao; Chen, Guanxing; Han, Caixia; Li, Xiaohui; Zeller, Friedrich J; Hsam, Sai L K; Hu, Yingkao; Yan, Yueming

2014-10-01

The endoplasmic reticulum chaperone binding protein (BiP) is an important functional protein, which is involved in protein synthesis, folding assembly, and secretion. In order to study the role of BiP in the process of wheat seed development, we cloned three BiP homologous cDNA sequences in bread wheat (Triticum aestivum), completed by rapid amplification of cDNA ends (RACE), and examined the expression of wheat BiP in wheat tissues, particularly the relationship between BiP expression and the subunit types of HMW-GS using near-isogenic lines (NILs) of HMW-GS silencing, and under abiotic stress. Sequence analysis demonstrated that all BiPs contained three highly conserved domains present in plants, animals, and microorganisms, indicating their evolutionary conservation among different biological species. Quantitative reverse transcription-polymerase chain reaction (qRT-PCR) revealed that TaBiP (Triticum aestivum BiP) expression was not organ-specific, but was predominantly localized to seed endosperm. Furthermore, immunolocalization confirmed that TaBiP was primarily located within the protein bodies (PBs) in wheat endosperm. Three TaBiP genes exhibited significantly down-regulated expression following high molecular weight-glutenin subunit (HMW-GS) silencing. Drought stress induced significantly up-regulated expression of TaBiPs in wheat roots, leaves, and developing grains. The high conservation of BiP sequences suggests that BiP plays the same role, or has common mechanisms, in the folding and assembly of nascent polypeptides and protein synthesis across species. The expression of TaBiPs in different wheat tissue and under abiotic stress indicated that TaBiP is most abundant in tissues with high secretory activity and with high proportions of cells undergoing division, and that the expression level of BiP is associated with the subunit types of HMW-GS and synthesis. The expression of TaBiPs is developmentally regulated during seed development and early seedling growth, and under various abiotic stresses.

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Response of sphagnum peatland testate amoebae to a 1-year transplantation experiment along an artificial hydrological gradient.

PubMed

Marcisz, Katarzyna; Fournier, Bertrand; Gilbert, Daniel; Lamentowicz, Mariusz; Mitchell, Edward A D

2014-05-01

Peatland testate amoebae (TA) are well-established bioindicators for depth to water table (DWT), but effects of hydrological changes on TA communities have never been tested experimentally. We tested this in a field experiment by placing Sphagnum carpets (15 cm diameter) collected in hummock, lawn and pool microsites (origin) at three local conditions (dry, moist and wet) using trenches dug in a peatland. One series of samples was seeded with microorganism extract from all microsites. TA community were analysed at T0: 8-2008, T1: 5-2009 and T2: 8-2009. We analysed the data using conditional inference trees, principal response curves (PRC) and DWT inferred from TA communities using a transfer function used for paleoecological reconstruction. Density declined from T0 to T1 and then increased sharply by T2. Species richness, Simpson diversity and Simpson evenness were lower at T2 than at T0 and T1. Seeded communities had higher species richness in pool samples at T0. Pool samples tended to have higher density, lower species richness, Simpson diversity and Simpson Evenness than hummock and/or lawn samples until T1. In the PRC, the effect of origin was significant at T0 and T1, but the effect faded away by T2. Seeding effect was strongest at T1 and lowest vanished by T2. Local condition effect was strong but not in line with the wetness gradient at T1 but started to reflect it by T2. Likewise, TA-inferred DWT started to match the experimental conditions by T2, but more so in hummock and lawn samples than in pool samples. This study confirmed that TA responds to hydrological changes over a 1-year period. However, sensitivity of TA to hydrological fluctuations, and thus the accuracy of inferred DWT changes, was habitat specific, pool TA communities being least responsive to environmental changes. Lawns and hummocks may be thus better suited than pools for paleoecological reconstructions. This, however, contrasts with the higher prediction error and species' tolerance for DWT with increasing dryness observed in transfer function models.

Influence of charged defects on the interfacial bonding strength of tantalum- and silver-doped nanograined TiO2.

PubMed

Azadmanjiri, Jalal; Wang, James; Berndt, Christopher C; Kapoor, Ajay; Zhu, De Ming; Ang, Andrew S M; Srivastava, Vijay K

2017-05-17

A nano-grained layer including line defects was formed on the surface of a Ti alloy (Ti alloy , Ti-6Al-4V ELI). Then, the micro- and nano-grained Ti alloy with the formation of TiO 2 on its top surface was coated with a bioactive Ta layer with or without incorporating an antibacterial agent of Ag that was manufactured by magnetron sputtering. Subsequently, the influence of the charged defects (the defects that can be electrically charged on the surface) on the interfacial bonding strength and hardness of the surface system was studied via an electronic model. Thereby, material systems of (i) Ta coated micro-grained titanium alloy (Ta/MGTi alloy ), (ii) Ta coated nano-grained titanium alloy (Ta/NGTi alloy ), (iii) TaAg coated micro-grained titanium alloy (TaAg/MGTi alloy ) and (iv) TaAg coated nano-grained titanium alloy (TaAg/NGTi alloy ) were formed. X-ray photoelectron spectroscopy was used to probe the electronic structure of the micro- and nano-grained Ti alloy , and so-formed heterostructures. The thin film/substrate interfaces exhibited different satellite peak intensities. The satellite peak intensity may be related to the interfacial bonding strength and hardness of the surface system. The interfacial layer of TaAg/NGTi alloy exhibited the highest satellite intensity and maximum hardness value. The increased bonding strength and hardness in the TaAg/NGTi alloy arises due to the negative core charge of the dislocations and neighbor space charge accumulation, as well as electron accumulation in the created semiconductor phases of larger band gap at the interfacial layer. These two factors generate interfacial polarization and enhance the satellite intensity. Consequently, the interfacial bonding strength and hardness of the surface system are improved by the formation of mixed covalent-ionic bonding structures around the dislocation core area and the interfacial layer. The bonding strength relationship by in situ XPS on the metal/TiO 2 interfacial layer may be examined with other noble metals and applied in diverse fields.

A broadband permeability measurement of FeTaN lamination stack by the shorted microstrip line method

NASA Astrophysics Data System (ADS)

Chen, Xin; Ma, Yungui; Xu, Feng; Wang, Peng; Ong, C. K.

2009-01-01

In this paper, the microwave characteristics of a FeTaN lamination stack are studied with a shorted microstrip line method. The FeTaN lamination stack was fabricated by gluing 54 layers of FeTaN units with epoxy together. The FeTaN units were deposited on both sides of an 8 μm polyethylene terephthate (Mylar) film as the substrate by rf magnetron sputtering. On each side of the Mylar substrate, three 100-nm FeTaN layers are laminated with two 8 nm Al2O3 layers. The complex permeability of FeTaN lamination stack is calculated by the scattering parameters using the shorted load transmission line model based on the quasi-transverse-electromagnetic approximation. A full wave analysis combined with an optimization process is employed to determine the accurate effective permeability values. The optimized complex permeability data can be used for the microwave filter design.

Synthesis, crystal structure, and photocatalytic activity of a new two-layer Ruddlesden-Popper phase, Li{sub 2}CaTa{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang Zhenhua; Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026; Tang Kaibin

2008-04-15

A new two-layer Ruddlesden-Popper phase Li{sub 2}CaTa{sub 2}O{sub 7} has been synthesized for the first time. The detailed structure determination of Li{sub 2}CaTa{sub 2}O{sub 7} performed by powder X-ray diffraction (XRD) and electron microscopy (ED) shows that it crystallizes in the space group Fmmm [a{approx}5.5153(1), b{approx}5.4646(1), c{approx}18.2375(3)A]. UV-visible diffuse reflection spectrum of the prepared Li{sub 2}CaTa{sub 2}O{sub 7} indicates that it had absorption in the UV region. The photocatalytic activity of the Li{sub 2}CaTa{sub 2}O{sub 7} powders was evaluated by degradation of RhB molecules in water under ultra visible light irradiation. The results showed that Li{sub 2}CaTa{sub 2}O{sub 7} hasmore » high photocatalytic activity at room temperature. Therefore, the preparation and properties studies of Li{sub 2}CaTa{sub 2}O{sub 7} with a two-layer Ruddlesden-Popper structure suggest potential future applications in photocatalysis. - Graphical abstract: Crystal structure of a two-layer Ruddlesden-Popper phase Li{sub 2}CaTa{sub 2}O{sub 7} A new two-layer Ruddlesden-Popper phase Li{sub 2}CaTa{sub 2}O{sub 7} has been synthesized for the first time. Li{sub 2}CaTa{sub 2}O{sub 7} crystallizes in the space group Fmmm determined by powder X-ray and electron diffraction. UV-visible diffuse reflection spectra and the photocatalytic degradation of RhB molecules in water under ultra visible light irradiation show that Li{sub 2}CaTa{sub 2}O{sub 7} is a potential material in photocatalysis.« less

Fluorescent vancomycin and terephthalate comodified europium-doped layered double hydroxides nanoparticles: synthesis and application for bacteria labelling

NASA Astrophysics Data System (ADS)

Sun, Jianchao; Fan, Hai; Wang, Nan; Ai, Shiyun

2014-09-01

Vancomycin (Van)- and terephthalate (TA)-comodified europium-doped layered double hydroxides (Van-TA-Eu-LDHs) nanoparticles were successfully prepared by a two-step method, in which, TA acted as a sensitizer to enhance the fluorescent property and Van was modified on the surface of LDH to act as an affinity reagent to bacteria. The obtained products were characterized by X-ray diffraction, transmission electron microscope and fluorescent spectroscopy. The results demonstrated that the prepared Van- and TA-comodified europium-doped layered double hydroxides (Van-TA-Eu-LDHs) nanoparticles with diameter of 50 nm in size showed highly efficient fluorescent property. Furthermore, due to the high affinity of Van to bacteria, the prepared Van-TA-Eu-LDHs nanoparticles showed efficient bacteria labelling by fluorescent property. The prepared nanoparticles may have wide applications in the biological fields, such as biomolecular labelling and cell imaging.

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

NASA Astrophysics Data System (ADS)

Liu, J.-W.; Liao, M.-Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

2014-06-01

A Ta2O5/Al2O3 bilayer gate oxide with a high-dielectric constant (high-k) has been successfully applied to a hydrogenated-diamond (H-diamond) metal-insulator-semiconductor field effect transistor (MISFET). The Ta2O5 layer is prepared by a sputtering-deposition (SD) technique on the Al2O3 buffer layer fabricated by an atomic layer deposition (ALD) technique. The ALD-Al2O3 plays an important role to eliminate plasma damage for the H-diamond surface during SD-Ta2O5 deposition. The dielectric constants of the SD-Ta2O5/ALD-Al2O3 bilayer and single SD-Ta2O5 are as large as 12.7 and 16.5, respectively. The k value of the single SD-Ta2O5 in this study is in good agreement with that of the SD-Ta2O5 on oxygen-terminated diamond. The capacitance-voltage characteristic suggests low interfacial trapped charge density for the SD-Ta2O5/ALD-Al2O3/H-diamond MIS diode. The MISFET with a gate length of 4 µm has a drain current maximum and an extrinsic transconductance of -97.7 mA mm-1 (normalized by gate width) and 31.0 ± 0.1 mS mm-1, respectively. The effective mobility in the H-diamond channel layer is found to be 70.1 ± 0.5 cm2 V-1 s-1.

Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

NASA Astrophysics Data System (ADS)

Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

2015-12-01

We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

Influence of inserted Mo layer on the thermal stability of perpendicularly magnetized Ta/Mo/Co{sub 20}Fe{sub 60}B{sub 20}/MgO/Ta films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Minghua, E-mail: mhli@ustb.edu.cn; Department of Electrical Engineering, University of California, Los Angeles, California 90095; Lu, Jinhui

2016-04-15

We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta films with and without inserted Mo layers. In the absence of a Mo layer, the films show PMA at annealing temperatures below 300 °C. On the other hand, the insertion of a Mo layer preserves PMA at annealing temperatures of up to 500 °C; however, a higher annealing temperature leads to the collapse of PMA. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) were used to study the microstructure of the films to understand the deterioration of PMA. The XPS results show that the segregation ofmore » Ta is partly suppressed by inserting a Mo layer. Once inserted, Mo does not remain at the interface of Ta and CoFeB but migrates to the surface of the films. The HRTEM results show that the crystallization of the MgO (001) texture is improved owing to the higher annealing temperature of the Mo inserted sample. A smooth and clear CoFeB/MgO interface is evident. The inserted Mo layer not only helps to obtain sharper and smoother interfaces but also contributes to the crystallization after the higher annealing temperature of films.« less

Nanostructured Ti-Ta thin films synthesized by combinatorial glancing angle sputter deposition

NASA Astrophysics Data System (ADS)

Motemani, Yahya; Khare, Chinmay; Savan, Alan; Hans, Michael; Paulsen, Alexander; Frenzel, Jan; Somsen, Christoph; Mücklich, Frank; Eggeler, Gunther; Ludwig, Alfred

2016-12-01

Ti-Ta alloys are attractive materials for applications in actuators as well as biomedical implants. When fabricated as thin films, these alloys can potentially be employed as microactuators, components for micro-implantable devices and coatings on surgical implants. In this study, Ti100-x Ta x (x = 21, 30) nanocolumnar thin films are fabricated by glancing angle deposition (GLAD) at room temperature using Ti73Ta27 and Ta sputter targets. Crystal structure, morphology and microstructure of the nanostructured thin films are systematically investigated by XRD, SEM and TEM, respectively. Nanocolumns of ˜150-160 nm in width are oriented perpendicular to the substrate for both Ti79Ta21 and Ti70Ta30 compositions. The disordered α″ martensite phase with orthorhombic structure is formed in room temperature as-deposited thin films. The columns are found to be elongated small single crystals which are aligned perpendicular to the (20\\bar{4}) and (204) planes of α″ martensite, indicating that the films’ growth orientation is mainly dominated by these crystallographic planes. Laser pre-patterned substrates are utilized to obtain periodic nanocolumnar arrays. The differences in seed pattern, and inter-seed distances lead to growth of multi-level porous nanostructures. Using a unique sputter deposition geometry consisting of Ti73Ta27 and Ta sputter sources, a nanocolumnar Ti-Ta materials library was fabricated on a static substrate by a co-deposition process (combinatorial-GLAD approach). In this library, a composition spread developed between Ti72.8Ta27.2 and Ti64.4Ta35.6, as confirmed by high-throughput EDX analysis. The morphology over the materials library varies from well-isolated nanocolumns to fan-like nanocolumnar structures. The influence of two sputter sources is investigated by studying the resulting column angle on the materials library. The presented nanostructuring methods including the use of the GLAD technique along with pre-patterning and a combinatorial materials library fabrication strategy offer a promising technological approach for investigating Ti-Ta thin films for a range of applications. The proposed approaches can be similarly implemented for other materials systems which can benefit from the formation of a nanocolumnar morphology.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di; Department of Optical Science and Engineering, Key Laboratory of Micro and Nano Photonic Structures; Yu, Guoqiang, E-mail: guoqiangyu@ucla.edu

2016-05-23

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer,more » i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.« less

Silencing of ABCC13 transporter in wheat reveals its involvement in grain development, phytic acid accumulation and lateral root formation.

PubMed

Bhati, Kaushal Kumar; Alok, Anshu; Kumar, Anil; Kaur, Jagdeep; Tiwari, Siddharth; Pandey, Ajay Kumar

2016-07-01

Low phytic acid is a trait desired in cereal crops and can be achieved by manipulating the genes involved either in its biosynthesis or its transport in the vacuoles. Previously, we have demonstrated that the wheat TaABCC13 protein is a functional transporter, primarily involved in heavy metal tolerance, and a probable candidate gene to achieve low phytate wheat. In the current study, RNA silencing was used to knockdown the expression of TaABCC13 in order to evaluate its functional importance in wheat. Transgenic plants with significantly reduced TaABCC13 transcripts in either seeds or roots were selected for further studies. Homozygous RNAi lines K1B4 and K4G7 exhibited 34-22% reduction of the phytic acid content in the mature grains (T4 seeds). These transgenic lines were defective for spike development, as characterized by reduced grain filling and numbers of spikelets. The seeds of transgenic wheat had delayed germination, but the viability of the seedlings was unaffected. Interestingly, early emergence of lateral roots was observed in TaABCC13-silenced lines as compared to non-transgenic lines. In addition, these lines also had defects in metal uptake and development of lateral roots in the presence of cadmium stress. Our results suggest roles of TaABCC13 in lateral root initiation and enhanced sensitivity towards heavy metals. Taken together, these data demonstrate that wheat ABCC13 is functionally important for grain development and plays an important role during detoxification of heavy metals. © The Author 2016. Published by Oxford University Press on behalf of the Society for Experimental Biology.

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

NASA Astrophysics Data System (ADS)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Magnetic properties and crystal texture of Co alloy thin films prepared on double bias Cr

NASA Astrophysics Data System (ADS)

Deng, Y.; Lambeth, D. N.; Lee, L.-L.; Laughlin, D. E.

1993-05-01

A double layer Cr film structure has been prepared by sputter depositing Cr on single crystal Si substrates first without substrate bias and then with various substrate bias voltages. Without substrate bias, Cr{200} texture grows on Si at room temperature; thus the first Cr layer acts like a seed Cr layer with the {200} texture, and the second Cr layer, prepared with substrate bias, tends to replicate the {200} texture epitaxially. CoCrTa and CoNiCr films prepared on these double Cr underlayers, therefore, tend to have a {112¯0} texture with their c-axes oriented in the plane of the film. At the same time, the bias sputtering of the second Cr layer increases the coercivity of the subsequently deposited magnetic films significantly. Comparison studies of δM curves show that the use of the double Cr underlayers reduces the intergranular exchange interactions. The films prepared on the Si substrates have been compared with the films prepared on canasite and glass substrates. It has also been found that the magnetic properties are similar for films on canasite and on glass.

Role of the Heat Sink Layer Ta for Ultrafast Spin Dynamic Process in Amorphous TbFeCo Thin Films

NASA Astrophysics Data System (ADS)

Ren, Y.; Zhang, Z. Z.; Min, T.; Jin, Q. Y.

The ultrafast demagnetization processes (UDP) in Ta (t nm)/TbFeCo (20 nm) films have been studied using the time-resolved magneto-optical Kerr effect (TRMOKE). With a fixed pump fluence of 2 mJ/cm2, for the sample without a Ta underlayer (t=0nm), we observed the UDP showing a two-step decay behavior, with a relatively longer decay time (τ2) around 3.0 ps in the second step due to the equilibrium of spin-lattice relaxation following the 4f occupation. As a 10nm Ta layer is deposited, the two-step demagnetization still exists while τ2 decreases to ˜1.9ps. Nevertheless, the second-step decay (τ2=0ps) disappears as the Ta layer thickness is increased up to 20 nm, only the first-step UDP occurs within 500 fs, followed by a fast recovery process. The rapid magnetization recovery rate strongly depends on the pump fluence. We infer that the Ta layer provides conduction electrons involving the thermal equilibrium of spin-lattice interaction and serves as heat bath taking away energy from spins of TbFeCo alloy film in UDP.

Diffusion studies and critical current in superconducting Nb-Ti-Ta artificial pinning center wire

NASA Astrophysics Data System (ADS)

Bormio-Nunes, C.; Gomes, P. M. N.; Tirelli, M. A.; Ghivelder, L.

2005-08-01

The diffusion between Nb-20%Ta (wt %) and pure Ti is studied at temperatures of 973, 1023, and 1073K, for duration times among 25 and 121h in an artificial pinning center (APC) wire composed of a Ti core surrounded by a Nb-20%Ta layer. The produced diffusion layer is a ternary alloy with superconducting properties, such as critical field Bc2 and critical current density JC, which intrinsically depend on the layer composition. Measurements of layer morphology and composition were performed, and the results show a preferential diffusion of Nb and Ta into Ti. There is a slight diffusion of Ti into Nb through grain boundaries. The presence of Ta also slows down the diffusion of Nb in Ti if compared to the couple formed by pure Nb and Ti. Regarding the mechanical properties of the composite wire, the use of lower temperatures to form the ternary phase is desirable in order to avoid a larger portion of the diffusion layer rich in Ti that favorites α-Ti precipitations that are detrimental to the wire ductility. The best JC value was obtained for the sample heat treated at 973K. The improvement of the flux-line pinning was associated with a sharp change of the diffusion layer composition rather than pinning by normal layer interfaces, suggesting a new source of pinning in this kind of material. Nb-Ti-Ta ternary alloys have the potential to be used in superconducting magnets when fields above 12T are required.

New Cu(GeNx) film in barrierless metallization for LED heat dissipation

NASA Astrophysics Data System (ADS)

Lin, Chon-Hsin

2015-05-01

In this study, we explore new Cu(Ge) and Cu(GeNx) films for LED heat dissipation. The films are Cu-alloy seed layers, fabricated by co-sputtering Cu and Ge in an Ar or N2 atmosphere on either Ta/Al2O3 or polyimide substrates. The Cu alloy films are then annealed at 600 and 730 °C, respectively, for 1 h without notable Cu oxide formation at the Cu-Ta/Al2O3 interface. No Cu oxide is formed at the Cu-polyimide interface either after annealing the films at 310 °C for 1 h. The film formed atop an Al2O3 substrate contains a trace amount of GeNx and is thermally stable up to 730 °C, and the film formed atop a polyimide substrate is thermally stable up to 310 °C, both exhibiting a low resistivity and a high thermal conductivity. Such a thermal feature makes the Cu(GeNx) film a good candidate material in barrierless metallization for many industrial applications, such as LED heat sinks.

Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects

NASA Astrophysics Data System (ADS)

Ito, Kazuhiro; Ohmori, Kazuyuki; Kohama, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Asai, Koyu; Murakami, Masanori

2010-11-01

Cu interconnects have been used extensively in ULSI devices. However, large resistance-capacitance delay and poor device reliability have been critical issues as the device feature size has reduced to nanometer scale. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti-based self-formed barrier (SFB) using Cu(Ti) alloy seed to 45nm-node dual damascene interconnects and evaluated its performance. The line resistance and via resistance decreased significantly, compared with those of conventional Ta/TaN barriers. The stress migration performance was also drastically improved using the SFB process. A performance of time dependent dielectric breakdown revealed superior endurance. These results suggest that the Ti-based SFB process is one of the most promising candidates for advanced Cu interconnects. TEM and X-ray photoelectron spectroscopy observations for characterization of the Ti-based SFB structure were also performed. The Ti-based SFB consisted of mainly amorphous Ti oxides. Amorphous or crystalline Ti compounds such as TiC, TiN, and TiSi formed beneath Cu alloy films, and the formation varied with dielectric.

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

The effect of growth sequence on magnetization damping in Ta/CoFeB/MgO structures

NASA Astrophysics Data System (ADS)

Liu, Bo; Huang, Dawei; Gao, Ming; Tu, Hongqing; Wang, Kejie; Ruan, Xuezhong; Du, Jun; Cai, Jian-Wang; He, Liang; Wu, Jing; Wang, Xinran; Xu, Yongbing

2018-03-01

Magnetization damping is a key parameter to control the critical current and the switching speed in magnetic random access memory, and here we report the effect of the growth sequence on the magnetic dynamics properties of perpendicularly magnetized Ta/CoFeB/MgO structures. Ultrathin CoFeB films have been grown between Ta and MgO but with different stack sequences, i.e. substrate/Ta/CoFeB/MgO/Ta and substrate/Ta/MgO/CoFeB/Ta. The magnetization dynamics induced by femtosecond laser was investigated by using all-optical pump-probe measurements. We found that the Gilbert damping constant was modulated by reversing stack structures, which offers the potential to tune the damping parameter by the growth sequence. The Gilbert damping constant was enhanced from 0.017 for substrate/Ta/CoFeB/MgO/Ta to 0.027 for substrate/Ta/MgO/CoFeB/Ta. We believe that this enhancement originates from the increase of intermixing at the CoFeB/Ta when the Ta atom layer was grown after the CoFeB layer.

Tuning the effective parameters in (Ta/Cu/[Ni/Co]x/Ta) multilayers with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Ayareh, Zohreh; Moradi, Mehrdad; Mahmoodi, Saman

2018-06-01

In this paper, we report perpendicular magnetic anisotropy (PMA) in a (Ta/Cu/[Ni/Co]x/Ta) multilayers structure. These typical structures usually include a multilayer of ferromagnetic and transition metal thin films. Usually, magnetic anisotropy is characterized by magnetization loops determined by magnetometer or magneto-optical Kerr effect (MOKE). The interface between ferromagnetic and metallic layers plays an important role in magnetic anisotropy evolution from out-of-plane to in-plane in (Ta/Cu/[Ni/Co]/Ta) structure. Obtained results from MOKE and magnetometry of these samples show that they have different easy axes due to change in thickness of Cu as spacer layer and difference in number of repetition of [Ni/Co] stacks.

Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

NASA Astrophysics Data System (ADS)

Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

1995-09-01

Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

Dependence of spin pumping and spin transfer torque upon Ni81Fe19 thickness in Ta/Ag /Ni 81Fe19/Ag/Co 2MnGe /Ag /Ta spin-valve structures

NASA Astrophysics Data System (ADS)

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.; Hicken, R. J.; Figueroa, A. I.; Baker, A. A.; van der Laan, G.; Duffy, L. B.; Shafer, P.; Klewe, C.; Arenholz, E.; Cavill, S. A.; Childress, J. R.; Katine, J. A.

2017-10-01

Spin pumping has been studied within Ta / Ag / Ni81Fe19 (0-5 nm) / Ag (6 nm) / Co2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni81Fe19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfer torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. This study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.

Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

NASA Astrophysics Data System (ADS)

Natarajarathinam, Anusha

Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

Ternary metal-rich sulfide with a layered structure

DOEpatents

Franzen, Hugo F.; Yao, Xiaoqiang

1993-08-17

A ternary Nb-Ta-S compound is provided having the atomic formula, Nb.sub.1.72 Ta.sub.3.28 S.sub.2, and exhibiting a layered structure in the sequence S-M3-M2-M1-M2-M3-S wherein S represents sulfur layers and M1, M2, and M3 represent Nb/Ta mixed metal layers. This sequence generates seven sheets stacked along the [001] direction of an approximate body centered cubic crystal structure with relatively weak sulfur-to-sulfur van der Waals type interactions between adjacent sulfur sheets and metal-to-metal bonding within and between adjacent mixed metal sheets.

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

The homeodomain transcription factor TaHDZipI-2 from wheat regulates frost tolerance, flowering time and spike development in transgenic barley.

PubMed

Kovalchuk, Nataliya; Chew, William; Sornaraj, Pradeep; Borisjuk, Nikolai; Yang, Nannan; Singh, Rohan; Bazanova, Natalia; Shavrukov, Yuri; Guendel, Andre; Munz, Eberhard; Borisjuk, Ljudmilla; Langridge, Peter; Hrmova, Maria; Lopato, Sergiy

2016-07-01

Homeodomain leucine zipper class I (HD-Zip I) transcription factors (TFs) play key roles in the regulation of plant growth and development under stresses. Functions of the TaHDZipI-2 gene isolated from the endosperm of developing wheat grain were revealed. Molecular characterization of TaHDZipI-2 protein included studies of its dimerisation, protein-DNA interactions and gene activation properties using pull-down assays, in-yeast methods and transient expression assays in wheat cells. The analysis of TaHDZipI-2 gene functions was performed using transgenic barley plants. It included comparison of developmental phenotypes, yield components, grain quality, frost tolerance and the levels of expression of potential target genes in transgenic and control plants. Transgenic TaHDZipI-2 lines showed characteristic phenotypic features that included reduced growth rates, reduced biomass, early flowering, light-coloured leaves and narrowly elongated spikes. Transgenic lines produced 25-40% more seeds per spike than control plants, but with 50-60% smaller grain size. In vivo lipid imaging exposed changes in the distribution of lipids between the embryo and endosperm in transgenic seeds. Transgenic lines were significantly more tolerant to frost than control plants. Our data suggest the role of TaHDZipI-2 in controlling several key processes underlying frost tolerance, transition to flowering and spike development. © 2016 The Authors. New Phytologist © 2016 New Phytologist Trust.

Photoluminescence of Ta2O5 films formed by the molecular layer deposition method

NASA Astrophysics Data System (ADS)

Baraban, A. P.; Dmitriev, V. A.; Prokof'ev, V. A.; Drozd, V. E.; Filatova, E. O.

2016-04-01

Ta2O5 films of different thicknesses (20-100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance-voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si-Ta2O5-field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norwood, D.P.

1989-01-31

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOEpatents

Norwood, David P.

1989-01-01

A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

NASA Astrophysics Data System (ADS)

Gao, Shuang; Zeng, Fei; Li, Fan; Wang, Minjuan; Mao, Haijun; Wang, Guangyue; Song, Cheng; Pan, Feng

2015-03-01

The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ~6 × 102 is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (~44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications.The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaOx region that is in close proximity to the TaOx/n-Si interface, via out-diffusion of oxygen ions from TaOx to n-Si. A maximum rectification ratio of ~6 × 102 is obtained when the Pt/TaOx/n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (~44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaOx/n-Si tri-layer structure for access device-free high-density memory applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06406b

Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

PubMed

Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

2018-02-14

We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.

PubMed

Kim, Junyeon; Sinha, Jaivardhan; Hayashi, Masamitsu; Yamanouchi, Michihiko; Fukami, Shunsuke; Suzuki, Tetsuhiro; Mitani, Seiji; Ohno, Hideo

2013-03-01

Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses. In particular, a 1 nm thickness variation of the Ta layer can change the magnitude of the effective field by nearly two orders of magnitude. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects contributing to it. Our results illustrate that the presence of atomically thin metals can profoundly change the landscape for controlling magnetic moments in magnetic heterostructures electrically.

Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

NASA Astrophysics Data System (ADS)

Jeong, Yeon Taek; Dodabalapur, Ananth

2007-11-01

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3Å was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and Ion/Ioff ratio of 0.45cm2/Vs, 0.56V, and 7.5×101, respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

2015-02-23

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysismore » also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.« less

Dependence of spin pumping and spin transfer torque upon Ni 81 Fe 19 thickness in Ta / Ag / Ni 81 Fe 19 / Ag / Co 2 MnGe / Ag / Ta spin-valve structures

DOE PAGES

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.; ...

2017-10-18

Spin pumping has been studied within Ta / Ag / Ni 81Fe 19 (0–5 nm) / Ag (6 nm) / Co 2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni 81Fe 19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co 2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfermore » torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. Furthermore, this study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.« less

Dependence of spin pumping and spin transfer torque upon Ni 81 Fe 19 thickness in Ta / Ag / Ni 81 Fe 19 / Ag / Co 2 MnGe / Ag / Ta spin-valve structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.

Spin pumping has been studied within Ta / Ag / Ni 81Fe 19 (0–5 nm) / Ag (6 nm) / Co 2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni 81Fe 19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co 2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfermore » torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. Furthermore, this study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.« less

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

NASA Astrophysics Data System (ADS)

Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Roy, Anisha; Samanta, Subhranu; Dutta, Mrinmoy; Ginnaram, Sreekanth; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Jana, Debanjan; Qiu, Jian-Tai; Yang, Jer-Ren

2018-03-01

Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer in the RRAM devices has been confirmed by transmission electron microscopy. By analyzing the oxidation states of Ta2+/Ta5+ for TaOx switching material and W0/W6+ for WOx layer at the W/TaOx interface through X-ray photoelectron spectroscopy and H2O2 sensing, the reduction-oxidation mechanism under Set/Reset occurs only in the TaOx layer for the W/Al2O3/TaOx/TiN structures. This leads to higher Schottky barrier height at the W/Al2O3 interface (0.54 eV vs. 0.46 eV), higher resistance ratio, and long program/erase endurance of >108 cycles with 100 ns pulse width at a low operation current of 30 μA. Stable retention of more than 104 s at 85 °C is also obtained. Using conduction mechanism and reduction-oxidation reaction, current-voltage characteristic has been simulated. Both TaOx and WOx membranes have high pH sensitivity values of 47.65 mV/pH and 49.25 mV/pH, respectively. Those membranes can also sense H2O2 with a low concentration of 1 nM in an electrolyte-insulator-semiconductor structure because of catalytic activity, while the Al2O3 membrane does not show sensing. The TaOx material in W/Al2O3/TaOx/TiN structure does not show only a path towards high dense, small size memory application with understanding of switching mechanism but also can be used for H2O2 sensors.

The effect of a Ta oxygen scavenger layer on HfO 2-based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2016-02-15

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO 2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces themore » Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO 2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.« less

Highly sensitive transient absorption imaging of graphene and graphene oxide in living cells and circulating blood.

PubMed

Li, Junjie; Zhang, Weixia; Chung, Ting-Fung; Slipchenko, Mikhail N; Chen, Yong P; Cheng, Ji-Xin; Yang, Chen

2015-07-23

We report a transient absorption (TA) imaging method for fast visualization and quantitative layer analysis of graphene and GO. Forward and backward imaging of graphene on various substrates under ambient condition was imaged with a speed of 2 μs per pixel. The TA intensity linearly increased with the layer number of graphene. Real-time TA imaging of GO in vitro with capability of quantitative analysis of intracellular concentration and ex vivo in circulating blood were demonstrated. These results suggest that TA microscopy is a valid tool for the study of graphene based materials.

Genome-Wide Association of Rice Blast Disease Resistance and Yield-Related Components of Rice.

PubMed

Wang, Xueyan; Jia, Melissa H; Ghai, Pooja; Lee, Fleet N; Jia, Yulin

2015-12-01

Robust disease resistance may require an expenditure of energy that may limit crop yield potential. In the present study, a subset of a United States Department of Agriculture rice core collection consisting of 151 accessions was selected using a major blast resistance (R) gene, Pi-ta, marker and was genotyped with 156 simple sequence repeat (SSR) markers. Disease reactions to Magnaporthe oryzae, the causal agent of rice blast disease, were evaluated under greenhouse and field conditions, and heading date, plant height, paddy and brown seed weight in two field environments were analyzed, using an association mapping approach. A total of 21 SSR markers distributed among rice chromosomes 2 to 12 were associated with blast resistance, and 16 SSR markers were associated with seed weight, heading date, and plant height. Most noticeably, shorter plants were significantly correlated with resistance to blast, rice genomes with Pi-ta were associated with lighter seed weights, and the susceptible alleles of RM171 and RM6544 were associated with heavier seed weight. These findings unraveled a complex relationship between disease resistance and yield-related components.

Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

NASA Astrophysics Data System (ADS)

Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

2016-08-01

Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

NASA Astrophysics Data System (ADS)

Nakamura, Daisuke; Kimura, Taishi; Narita, Tetsuo; Suzumura, Akitoshi; Kimoto, Tsunenobu; Nakashima, Kenji

2017-11-01

A novel sintered tantalum carbide coating (SinTaC) prepared via a wet ceramic process is proposed as an approach to reducing the production cost and improving the crystal quality of bulk-grown crystals and epitaxially grown films of wide-bandgap semiconductors. Here, we verify the applicability of the SinTaC components as susceptors for chemical vapor deposition (CVD)-SiC and metal-organic chemical vapor deposition (MOCVD)-GaN epitaxial growth in terms of impurity incorporation from the SinTaC layers and also clarify the surface-roughness controllability of SinTaC layers and its advantage in CVD applications. The residual impurity elements in the SinTaC layers were confirmed to not severely incorporate into the CVD-SiC and MOCVD-GaN epilayers grown using the SinTaC susceptors. The quality of the epilayers was also confirmed to be equivalent to that of epilayers grown using conventional susceptors. Furthermore, the surface roughness of the SinTaC components was controllable over a wide range of average roughness (0.4 ≤ Ra ≤ 5 μm) and maximum height roughness (3 ≤ Rz ≤ 36 μm) through simple additional surface treatment procedures, and the surface-roughened SinTaC susceptor fabricated using these procedures was predicted to effectively reduce thermal stress on epi-wafers. These results confirm that SinTaC susceptors are applicable to epitaxial growth processes and are advantageous over conventional susceptor materials for reducing the epi-cost and improving the quality of epi-wafers.

Influence of temperature on oxidation mechanisms of fiber-textured AlTiTaN coatings.

PubMed

Khetan, Vishal; Valle, Nathalie; Duday, David; Michotte, Claude; Delplancke-Ogletree, Marie-Paule; Choquet, Patrick

2014-03-26

The oxidation kinetics of AlTiTaN hard coatings deposited at 265 °C by DC magnetron sputtering were investigated between 700 and 950 °C for various durations. By combining dynamic secondary ion mass spectrometry (D-SIMS), X-ray diffraction (XRD), and transmission electron microscopy (TEM) investigations of the different oxidized coatings, we were able to highlight the oxidation mechanisms involved. The TEM cross-section observations combined with XRD analysis show that a single amorphous oxide layer comprising Ti, Al, and Ta formed at 700 °C. Above 750 °C, the oxide scale transforms into a bilayer oxide comprising an Al-rich upper oxide layer and a Ti/Ta-rich oxide layer at the interface with the coated nitride layer. From the D-SIMS analysis, it could be proposed that the oxidation mechanism was governed primarily by inward diffusion of O for temperatures of ≤700 °C, while at ≥750 °C, it is controlled by outward diffusion of Al and inward diffusion of O. Via a combination of structural and chemical analysis, it is possible to propose that crystallization of rutile lattice favors the outward diffusion of Al within the AlTiTa mixed oxide layer with an increase in the temperature of oxidation. The difference in the mechanisms of oxidation at 700 and 900 °C also influences the oxidation kinetics with respect to oxidation time. Formation of a protective alumina layer decreases the rate of oxidation at 900 °C for long durations of oxidation compared to 700 °C. Along with the oxidation behavior, the enhanced thermal stability of AlTiTaN compared to that of the TiAlN coating is illustrated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Girsova, S. L., E-mail: girs@ispms.tsc.ru; Meisner, L. L., E-mail: lm@ispms.tsc.ru

The effect of the Ta-ion beam implantation on the micro- and nanostructures of the surface layers of NiTi alloy was investigated using transmission electron microscopy and Auger spectroscopy. It is found that the elements are distributed non-uniformly with depth, so that the sublayers differ significantly in structure. The modified surface layer was found to consist of two sublayers, i.e. the upper oxide layer and the lower-lying amorphous layer that contains a maximum of Ta atoms.

Release properties of tannic acid from hydrogen bond driven antioxidative cellulose nanofibrous films.

PubMed

Zhou, Bin; Hu, Xiaoqian; Zhu, Jinjin; Wang, Zhenzhen; Wang, Xichang; Wang, Mingfu

2016-10-01

Layer-by-layer (LBL) assembled films have been exploited for surface-mediated bioactive compound delivery. Here, an antioxidative hydrogen-bonded multilayer electrospun nanofibrous film was fabricated from tannic acid (TA), acting as a polyphenolic antioxidant, and poly(ethylene glycol) (PEG) via layer-by-layer assembly. It overcame the burst release behavior of nanofibrous carrier, due to the reversible/dynamic nature of hydrogen bond, which was responded to external stimuli. The PEG/TA nanofibrous films disassembled gradually and released TA to the media, when soaked in aqueous solutions. The release rate of TA increased with increasing bilayer number, pH and temperature, but decreased with enhancing ionic strength. The surface morphology of the nanofibrous mats was observed by scanning electron microscopy (SEM). The following antioxidant activity assay revealed that it could scavenge DPPH free radicals and ABTS(+) cation radicals, a major biological activity of polyphenols. This technology can be used to fabricate other phenolic-containing slowly releasing antioxidative nanofibrous films. Copyright © 2016 Elsevier B.V. All rights reserved.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

PubMed

Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

2016-09-07

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance.

Double Dirac point semimetal in 2D material: Ta2Se3

NASA Astrophysics Data System (ADS)

Ma, Yandong; Jing, Yu; Heine, Thomas

2017-06-01

Here, we report by first-principles calculations one new stable 2D Dirac material, Ta2Se3 monolayer. For this system, stable layered bulk phase exists, and exfoliation should be possible. Ta2Se3 monolayer is demonstrated to support two Dirac points close to the Fermi level, achieving the exotic 2D double Dirac semimetal. And like 2D single Dirac and 2D node-line semimetals, spin-orbit coupling could introduce an insulating state in this new class of 2D Dirac semimetals. Moreover, the Dirac feature in this system is layer-dependent and a metal-to-insulator transition is identified in Ta2Se3 when reducing the layer-thickness from bilayer to monolayer. These findings are of fundamental interests and of great importance for nanoscale device applications.

Giant magnetoresistance enhancement in spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Lai, Chih-Huang; Chen, C. J.; Chin, T. S.

2001-06-01

The magnetoresistance (MR) ratio is enhanced by 35% by inserting the nano-oxide layer (NOL) at the Ta/Co interface in the FeMn-based top spin valves (Ta/NOL/Co/Cu/Co/FeMn/Ta). The enhancement is attributed to specular reflection, resulting in a large resistance change and small sheet resistance. However, the formation of NOL at the interface of Ta/Co suppresses the (111) texture, resulting in small exchange fields. Top spin valves with NOLs show good thermal stability up to 200 °C annealing. The MR ratio is further increased after annealing at temperatures below 200 °C. Enhancement of the MR ratio by 61% can be achieved by annealing at 150 °C. For bottom spin valves (Ta/NiFe/FeMn/Co/Cu/NiFe/Ta), NOLs formed at FeMn/Co and NiFe/Ta interfaces increase MR ratios, but NOLs at Co/Cu or Cu/NiFe deteriorate the differential spin scattering and significantly reduce MR ratios.

Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study

NASA Astrophysics Data System (ADS)

Lanzillo, Nicholas A.; Restrepo, Oscar D.; Bhosale, Prasad S.; Cruz-Silva, Eduardo; Yang, Chih-Chao; Youp Kim, Byoung; Spooner, Terry; Standaert, Theodorus; Child, Craig; Bonilla, Griselda; Murali, Kota V. R. M.

2018-04-01

We present a combined theoretical and experimental study on the electron transport characteristics across several representative interface structures found in back-end-of-line interconnect stacks for advanced semiconductor manufacturing: Cu/Ta(N)/Co/Cu and Cu/Ta(N)/Ru/Cu. In particular, we evaluate the impact of replacing a thin TaN barrier with Ta while considering both Co and Ru as wetting layers. Both theory and experiment indicate a pronounced reduction in vertical resistance when replacing TaN with Ta, regardless of whether a Co or Ru wetting layer is used. This indicates that a significant portion of the total vertical resistance is determined by electron scattering at the Cu/Ta(N) interface. The electronic structure of these nano-sized interconnects is analyzed in terms of the atom-resolved projected density of states and k-resolved transmission spectra at the Fermi level. This work further develops a fundamental understanding of electron transport and material characteristics in nano-sized interconnects.

Highly sensitive transient absorption imaging of graphene and graphene oxide in living cells and circulating blood

PubMed Central

Li, Junjie; Zhang, Weixia; Chung, Ting-Fung; Slipchenko, Mikhail N.; Chen, Yong P.; Cheng, Ji-Xin; Yang, Chen

2015-01-01

We report a transient absorption (TA) imaging method for fast visualization and quantitative layer analysis of graphene and GO. Forward and backward imaging of graphene on various substrates under ambient condition was imaged with a speed of 2 μs per pixel. The TA intensity linearly increased with the layer number of graphene. Real-time TA imaging of GO in vitro with capability of quantitative analysis of intracellular concentration and ex vivo in circulating blood were demonstrated. These results suggest that TA microscopy is a valid tool for the study of graphene based materials. PMID:26202216

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norwood, D P

1989-01-31

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

Tantalum Nitride-Decorated Titanium with Enhanced Resistance to Microbiologically Induced Corrosion and Mechanical Property for Dental Application.

PubMed

Zhang, Yifei; Zheng, Yunfei; Li, Yongliang; Wang, Lixin; Bai, Yanjie; Zhao, Qiang; Xiong, Xiaoling; Cheng, Yan; Tang, Zhihui; Deng, Yi; Wei, Shicheng

2015-01-01

Microbiologically induced corrosion (MIC) of metallic devices/implants in the oral region is one major cause of implant failure and metal allergy in patients. Therefore, it is crucial to develop practical approaches which can effectively prevent MIC for broad clinical applications of these materials. In the present work, tantalum nitride (TaN)-decorated titanium with promoted bio-corrosion and mechanical property was firstly developed via depositing TaN layer onto pure Ti using magnetron sputtering. The microstructure and chemical constituent of TaN coatings were characterized, and were found to consist of a hard fcc-TaN outer layer. Besides, the addition of TaN coatings greatly increased the hardness and modulus of pristine Ti from 2.54 ± 0.20 to 29.88 ± 2.59 GPa, and from 107.19 ± 6.98 to 295.46 ± 19.36 GPa, respectively. Potentiodynamic polarization and electrochemical impedance spectroscopy studies indicated that TaN coating exhibited higher MIC resistance in comparison to bare Ti and TiN-coated coating in two bacteria-containing artificial saliva solutions. Moreover, the biofilm experiment showed that the TaN-decorated Ti sample possessed good antibacterial performance. The SEM and XPS results after biofilm removal demonstrated that TaN film remained its integrity and stability, while TiN layer detached from Ti surface in the bio-corrosion tests, demonstrating the anti-MIC behavior and the strong binding property of TaN coating to Ti substrate. Considering all these results, TaN-decorated Ti material exhibits the optimal comprehensive performance and holds great potential as implant material for dental applications.

Tantalum Nitride-Decorated Titanium with Enhanced Resistance to Microbiologically Induced Corrosion and Mechanical Property for Dental Application

PubMed Central

Li, Yongliang; Wang, Lixin; Bai, Yanjie; Zhao, Qiang; Xiong, Xiaoling; Cheng, Yan; Tang, Zhihui; Deng, Yi; Wei, Shicheng

2015-01-01

Microbiologically induced corrosion (MIC) of metallic devices/implants in the oral region is one major cause of implant failure and metal allergy in patients. Therefore, it is crucial to develop practical approaches which can effectively prevent MIC for broad clinical applications of these materials. In the present work, tantalum nitride (TaN)-decorated titanium with promoted bio-corrosion and mechanical property was firstly developed via depositing TaN layer onto pure Ti using magnetron sputtering. The microstructure and chemical constituent of TaN coatings were characterized, and were found to consist of a hard fcc-TaN outer layer. Besides, the addition of TaN coatings greatly increased the hardness and modulus of pristine Ti from 2.54 ± 0.20 to 29.88 ± 2.59 GPa, and from 107.19 ± 6.98 to 295.46 ± 19.36 GPa, respectively. Potentiodynamic polarization and electrochemical impedance spectroscopy studies indicated that TaN coating exhibited higher MIC resistance in comparison to bare Ti and TiN-coated coating in two bacteria-containing artificial saliva solutions. Moreover, the biofilm experiment showed that the TaN-decorated Ti sample possessed good antibacterial performance. The SEM and XPS results after biofilm removal demonstrated that TaN film remained its integrity and stability, while TiN layer detached from Ti surface in the bio-corrosion tests, demonstrating the anti-MIC behavior and the strong binding property of TaN coating to Ti substrate. Considering all these results, TaN-decorated Ti material exhibits the optimal comprehensive performance and holds great potential as implant material for dental applications. PMID:26107177

Ectopic expression of Triticum aestivum SERK genes (TaSERKs) control plant growth and development in Arabidopsis.

PubMed

Singh, Akanksha; Khurana, Paramjit

2017-09-28

Somatic embryogenesis receptor kinases (SERKs) belong to a small gene family of receptor-like kinases involved in signal transduction. A total of 54 genes were shortlisted from the wheat genome survey sequence of which 5 were classified as SERKs and 49 were identified as SERK-like (SERLs). Tissue- specific expression of TaSERKs at major developmental stages of wheat corroborates their indispensable role during somatic and zygotic embryogenesis. TaSERK transcripts show inherent differences in their hormonal sensitivities, i.e. TaSERK2 and TaSERK3 elicits auxin- specific responses while TaSERK1, 4 and 5 were more specific towards BR-mediated regulation. The ectopic expression of TaSERK1, 2, 3, 4 and 5 in Arabidopsis led to enhanced plant height, larger silique size and increased seed yield. Zygotic embryogenesis specific genes showed a differential pattern in TaSERK Arabidopsis transgenics specifically in the silique tissues. Elongated hypocotyls and enhanced root growth were observed in the overexpression transgenic lines of all five TaSERKs. The inhibitory action of auxin and brassinosteroid in all the TaSERK transgenic lines indicates their role in regulating root development. The results obtained imply redundant functions of TaSERKs in maintaining plant growth and development.

What does nitric acid really do to carbon nanofibers? [What nitric acid really does to carbon nanofibers

DOE PAGES

Sainio, S.; Nordlund, D.; Gandhiraman, R.; ...

2016-09-15

Understanding the chemical nature of the surface of carbon nanofibers (CNF) is critical in assessing their fundamental properties and tailoring them for the right application. To gain such knowledge, we present here a detailed X-ray adsorption spectroscopy (XAS) study accompanied by high resolution transmission electron microscopy (TEM) micrographs of two morphologically different CNF pairs (tetrahedral amorphous carbon (ta-C) grown “open structured” fibers and traditional bamboo-like “closed structured” fibers), where the surface chemical properties and structural features of the fibers are investigated in depth and the effects of nitric acid treatment on the fibers are revealed. The morphology of the fibermore » and/or the original seed- and adhesion layers markedly affect the response of the fibers to the acid treatment. Results also show that the nitric acid treatment increases the observed sp 2 intensity and modifies the two types of fibers to become more-alike both structurally and with respect to their oxygen functionalities. Furthermore, the XAS and HRTEM results confirm that a short nitric acid treatment does not remove the Ni catalyst particle but, instead, oxidizes their surfaces, especially in the case of ta-C grown fibers.« less

What does nitric acid really do to carbon nanofibers? [What nitric acid really does to carbon nanofibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sainio, S.; Nordlund, D.; Gandhiraman, R.

Understanding the chemical nature of the surface of carbon nanofibers (CNF) is critical in assessing their fundamental properties and tailoring them for the right application. To gain such knowledge, we present here a detailed X-ray adsorption spectroscopy (XAS) study accompanied by high resolution transmission electron microscopy (TEM) micrographs of two morphologically different CNF pairs (tetrahedral amorphous carbon (ta-C) grown “open structured” fibers and traditional bamboo-like “closed structured” fibers), where the surface chemical properties and structural features of the fibers are investigated in depth and the effects of nitric acid treatment on the fibers are revealed. The morphology of the fibermore » and/or the original seed- and adhesion layers markedly affect the response of the fibers to the acid treatment. Results also show that the nitric acid treatment increases the observed sp 2 intensity and modifies the two types of fibers to become more-alike both structurally and with respect to their oxygen functionalities. Furthermore, the XAS and HRTEM results confirm that a short nitric acid treatment does not remove the Ni catalyst particle but, instead, oxidizes their surfaces, especially in the case of ta-C grown fibers.« less

Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction.

PubMed

Zhao, J L; Teo, K L; Zheng, K; Sun, X W

2016-03-18

Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

NASA Astrophysics Data System (ADS)

Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

2018-03-01

The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

2018-04-01

A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

Redetermination of Na(3)TaF(8).

PubMed

Langer, Vratislav; Smrcok, Lubomír; Boca, Miroslav

2010-09-01

The crystal structure of trisodium octafluoridotantalate, Na(3)TaF(8), has been redetermined using diffractometer data collected at 153 K, resulting in more accurate bond distances and angles than obtained from a previous structure determination based on film data. The structure is built from layers running along [101], which are formed by distorted [TaF(8)] antiprisms and [NaF(6)] rectangular bipyramids sharing edges and corners. The individual layers are separated by eight-coordinated Na ions. Two atoms in the asymmetric unit are in special positions: the Ta atom is on a twofold axis in Wyckoff position 4e and one of the Na ions lies on an inversion centre in Wyckoff site 4d.

Synthesis and characterization of nanotubes from misfit compounds (LnS)1+yTaS2 (Ln= Pr, Sm, Gd, Yb).

PubMed

Tenne, Reshef; Serra, Marco; Stolovas, Dalit; Houben, Lothar; Popovitz-Biro, Ronit; Pinkas, Iddo; Kampmann, Felix; Maultzsch, Janina; Joselevich, Ernesto

2018-06-06

The synthesis and characterization of nanotubes from the misfit layered compounds (MLC) (LnS)1+yTaS2 (shortly denoted as LnS-TaS2) (Ln= Pr, Sm, Gd and Yb), not reported before, are described (the bulk compound YbS-LaS2 was not documented before). Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) show that the interlayer spacing along the c-axis decrease with increasing atomic number of the lanthanide atom, suggesting tighter interaction between the LnS layer and the TaS2 for the late lanthanides. The Raman spectra of the tubules were studied and compared to the bulk MLC compounds. Like bulk MLC, the Raman spectra can be divided into the low frequency modes (110-150 cm-1) of the LnS lattice and the high frequency (250-400 cm-1) of the TaS2 lattice. The Raman spectra indicate that the vibrational lattice modes of the strained layers in the tubes are stiffer than those in the bulk compounds. Furthermore, the modes of the late lanthanides are higher in energy compared with the earlier lanthanides, suggesting larger charge transfer between the LnS and the TaS2 layers for the late lanthanides. Polarized Raman measurements showed the expected binodal intensity profile (antenna effect). The intensity ratio of the Raman signal showed that the E2g mode of TaS2 is more sensitive to the light polarization effect than its A1g mode. These nanotubes are expected to reveal interesting low temperature quasi-1D transport behavior. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Nam-Hui; Jung, Jinyong; Cho, Jaehun

2015-10-05

We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlO{sub x} and Ta/Pt/Co/AlO{sub x} structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy are significantly improved due to the better interface between heavy metal and ferromagnetic layer. From the frequency shift between Stokes- and anti-Stokes spin-waves, we successively obtain considerably larger iDM energy densities (D{sub max} = 1.65 ± 0.13 mJ/m{sup 2} at t{sub Co} = 1.35 nm) upon adding the Ta buffer layer, despite the nominally identical interface materials. Moreover, the energy density shows an inverse proportionality with the Co layer thickness,more » which is the critical clue that the observed iDMI is indeed originating from the interface between the Pt and Co layers.« less

Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co 2FeAl electrodes

NASA Astrophysics Data System (ADS)

Zhang, D. L.; Xu, X. G.; Wu, Y.; Miao, J.; Jiang, Y.

2011-03-01

We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2FeAl/NOL 1/Co 2FeAl/Cu/Co 2FeAl/NOL 2/Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2FeAl (CFA) PSV with a structure of Ta/Co 2FeAl/Cu/Co 2FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2O 3)(Al 2O 3)] in NOL 1 and [(Fe 2O 3)(Al 2O 3)(Ta 2O 5)] in NOL 2. Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure.

A study of the properties and microstructure of Ni 81Fe 19 ultrathin films with MgO

NASA Astrophysics Data System (ADS)

Li, Minghua; Han, Gan; Ding, Lei; Wang, Xiaocui; Liu, Yang; Feng, Chun; Wang, Haicheng; Yu, Guanghua

2012-01-01

The anisotropic magnetoresistance (AMR) of a Ta (5 nm)/MgO (3 nm)/Ni81Fe19 (10 nm)/MgO (2 nm)/Ta (3 nm) film with MgO-Nano Oxide Layer (NOL) increases dramatically from 1.05% to 3.24% compared with a Ta (5 nm)/Ni81Fe19 (10 nm)/Ta (3 nm) film without the MgO-NOL layer after annealing at 380 °C for 2 h. Although the MgO destroys the NiFe (1 1 1) texture, it enhances the specular electron scattering of the conduction electrons at the NOL interface and suppresses the interface reactions and diffusion at the Ta/NiFe and NiFe/Ta interfaces. The NiFe (1 1 1) texture was formed after the annealing, resulting in a higher AMR ratio. X-ray photoelectron spectroscope results show that Mg and Mg2+ were present in the MgOx films.

Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

NASA Astrophysics Data System (ADS)

Seo, Youngmi; Kim, Jung Hyeun

2011-06-01

Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

NASA Astrophysics Data System (ADS)

Li, Mingji; Guo, Wenlong; Li, Hongji; Xu, Sheng; Qu, Changqing; Yang, Baohe

2014-10-01

This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3-3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na2SO4 aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g-1 at current density of 0.5 A g-1. The capacitance remains at about 84% after 1000 cycles at 10 A g-1. The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices.

Metal deposition using seed layers

DOEpatents

Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

2013-11-12

Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Zinc Tantalum Oxynitride (ZnTaO2N) Photoanode Modified with Cobalt Phosphate Layers for the Photoelectrochemical Oxidation of Alkali Water

PubMed Central

T. Weller, Mark

2018-01-01

Photoanodes fabricated by the electrophoretic deposition of a thermally prepared zinc tantalum oxynitride (ZnTaO2N) catalyst onto indium tin oxide (ITO) substrates show photoactivation for the oxygen evolution reaction (OER) in alkaline solutions. The photoactivity of the OER is further boosted by the photodeposition of cobalt phosphate (CoPi) layers onto the surface of the ZnTaO2N photoanodes. Structural, morphological, and photoelectrochemical (PEC) properties of the modified ZnTaO2N photoanodes are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible (UV−Vis) diffuse reflectance spectroscopy, and electrochemical techniques. The presence of the CoPi layer significantly improved the PEC performance of water oxidation in an alkaline sulphate solution. The photocurrent-voltage behavior of the CoPi-modified ZnTaO2N anodes was improved, with the influence being more prominent at lower oxidation potentials. A stable photocurrent density of about 2.3 mA·cm−2 at 1.23 V vs. RHE was attained upon visible light illumination. Relative to the ZnTaO2N photoanodes, an almost three-fold photocurrent increase was achieved at the CoPi/ZnTaO2N photoelectrode. Perovskite-based oxynitrides are modified using an oxygen-evolution co-catalyst of CoPi, and provide a new dimension for enhancing the photoactivity of oxygen evolution in solar-assisted water-splitting reactions. PMID:29346306

Development and study of chemical vapor deposited tantalum base alloys

NASA Technical Reports Server (NTRS)

Meier, G. H.; Bryant, W. A.

1976-01-01

A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

Modeling of erosion and deposition patterns on C-W and W-Ta twin limiters exposed to the TEXTOR edge plasmas

NASA Astrophysics Data System (ADS)

Ohya, K.; Tanabe, T.; Rubel, M.; Wada, M.; Ohgo, T.; Hirai, T.; Philipps, V.; Kirschner, A.; Pospieszczyk, A.; Huber, A.; Sergienko, G.; Brezinsek, S.; Noda, N.

2004-08-01

The erosion and deposition patterns on tungsten and tantalum test limiters exposed to the TEXTOR deuterium plasma containing a small amount of C impurity are simulated with the modified EDDY code. At the very top of the W and Ta limiters, there occurs neither erosion nor deposition, but the erosion proceeds slowly along the surface. When approaching the edge, the surface is covered by a thick C layer, which shows a very sharp boundary similar to the observation in surface measurements. In the erosion zone, the re-deposited carbon forms a W (Ta)-C mixed layer with small C concentration. Assumptions for chemical erosion yields of ˜0.01 for W and <0.005 for Ta fit the calculated widths of the deposition zone to the experimentally determined values. Possible reasons for the difference between W and Ta are discussed.

Static and dynamic properties of Co2FeAl thin films: Effect of MgO and Ta as capping layers

NASA Astrophysics Data System (ADS)

Husain, Sajid; Barwal, Vineet; Kumar, Ankit; Behera, Nilamani; Akansel, Serkan; Goyat, Ekta; Svedlindh, Peter; Chaudhary, Sujeet

2017-05-01

The influence of MgO and Ta capping layers on the static and dynamic magnetic properties of Co2FeAl (CFA) Heusler alloy thin films has been investigated. It is observed that the CFA film deposited with MgO capping layer is preeminent compared to the uncapped or Ta capped CFA film. In particular, the magnetic inhomogeneity contribution to the ferromagnetic resonance line broadening and damping constant are found to be minimal for the MgO capped CFA thin film i.e., 0.12±0.01 Oe and 0.0074±0.00014, respectively. The saturation magnetization was found to be 960±25emu/cc.

Interface structure in Cu/Ta2O5/Pt resistance switch: a first-principles study.

PubMed

Xiao, Bo; Watanabe, Satoshi

2015-01-14

The interface structures of a Cu/Ta2O5/Pt resistance switch under various oxidation conditions have been examined from first-principles. The O-rich Cu/Ta2O5 interface is found to be stable within a wide range of O chemical potentials. In this interface structure, a considerable number of interface Cu atoms tend to migrate to the amorphous Ta2O5 (a-Ta2O5) layer, which causes the formation of the Cu2O layer. The interface Cu atoms become more ionized with an increase in the interface O concentration and/or temperature. These ionized Cu(+) ions could function as one of the main sources for the formation of conduction filaments in the Cu/a-Ta2O5/Pt resistance switch. In contrast, the ionization of the interface Cu atoms is not observed in the Cu/crystal-Ta2O5 interface primarily due to the much lower Cu ionic conductivity in crystal-Ta2O5 than that in amorphous state. In addition, the Pt electrode could not be ionized, irrespective of the interface O concentration and temperature. The formation of interface O vacancies in Pt/Ta2O5 is always energetically more stable than that in Cu/Ta2O5, which may be partly responsible for the cone shape of conduction filament formed in the Cu/a-Ta2O5/Pt resistance switch, where the base of the cone lies on the Pt/Ta2O5 interface.

A Novel Fabrication Approach for Multifunctional Graphene-based Thin Film Nano-composite Membranes with Enhanced Desalination and Antibacterial Characteristics.

PubMed

Hegab, Hanaa M; ElMekawy, Ahmed; Barclay, Thomas G; Michelmore, Andrew; Zou, Linda; Losic, Dusan; Saint, Christopher P; Ginic-Markovic, Milena

2017-08-08

A practical fabrication technique is presented to tackle the trade-off between the water flux and salt rejection of thin film composite (TFC) reverse osmosis (RO) membranes through controlled creation of a thinner active selective polyamide (PA) layer. The new thin film nano-composite (TFNC) RO membranes were synthesized with multifunctional poly tannic acid-functionalized graphene oxide nanosheets (pTA-f-GO) embedded in its PA thin active layer, which is produced through interfacial polymerization. The incorporation of pTA-f-GOL into the fabricated TFNC membranes resulted in a thinner PA layer with lower roughness and higher hydrophilicity compared to pristine membrane. These properties enhanced both the membrane water flux (improved by 40%) and salt rejection (increased by 8%) of the TFNC membrane. Furthermore, the incorporation of biocidal pTA-f-GO nanosheets into the PA active layer contributed to improving the antibacterial properties by 80%, compared to pristine membrane. The fabrication of the pTA-f-GO nanosheets embedded in the PA layer presented in this study is a very practical, scalable and generic process that can potentially be applied in different types of separation membranes resulting in less energy consumption, increased cost-efficiency and improved performance.

Electromigration in epitaxial Cu(001) lines

NASA Astrophysics Data System (ADS)

Ramanath, G.; Kim, H.; Goindi, H. S.; Frederick, M. J.; Shin, C.-S.; Goswami, R.; Petrov, I.; Greene, J. E.

2002-04-01

We report the electromigration (EM) response of single-domain epitaxial Cu(001) lines on layers of Ta, TaN, and TiN. Epitaxial Cu(001) lines on nitride layers exhibit nearly two orders of magnitude higher mean-time-to-failure (MTTF) values than those on Ta, indicating the strong influence of the underlayer. The activation energy of EM for Cu on the nitrides is ˜0.8-1.2 eV, and that of Cu on Ta is ˜0.2 eV, for 200-300 °C. Our results also indicate that the MTTF values correlate inversely to the crystal quality of the Cu layers measured by X-ray diffraction. The EM resistance of epitaxial Cu lines with different crystal quality on TaN were measured to separate the effects of interface chemistry and crystal quality. While higher quality epitaxial films reveal a higher EM resistance, the magnitude of the change is smaller than that obtained by changing the interface chemistry. Epitaxial lines exhibit more than 3-4 orders of magnitude higher MTTF than polycrystalline lines on the same underlayer. Based upon our results, we propose that the Cu/underlayer interface chemistry and presence of grain boundary diffusion play important roles in unpassivated Cu films.

Identification and comprehensive analyses of the CBL and CIPK gene families in wheat (Triticum aestivum L.).

PubMed

Sun, Tao; Wang, Yan; Wang, Meng; Li, Tingting; Zhou, Yi; Wang, Xiatian; Wei, Shuya; He, Guangyuan; Yang, Guangxiao

2015-11-04

Calcineurin B-like (CBL) proteins belong to a unique group of calcium sensors in plant that decode the Ca(2+) signature by interacting with CBL-interacting protein kinases (CIPKs). Although CBL-CIPK complexes have been shown to play important roles in the responses to various stresses in plants, little is known about their functions in wheat. A total of seven TaCBL and 20 TaCIPK genes were amplified from bread wheat, Triticum aestivum cv. Chinese Spring. Reverse-transcriptase-polymerase chain reaction (RT-PCR) and in silico expression analyses showed that TaCBL and TaCIPK genes were expressed at different levels in different tissues, or maintained at nearly constant expression levels during the whole life cycle of the wheat plant. Some TaCBL and TaCIPK genes showed up- or down-regulated expressions during seed germination. Preferential interactions between TaCBLs and TaCIPKs were observed in yeast two-hybrid and bimolecular fluorescence complementation experiments. Analyses of a deletion series of TaCIPK proteins with amino acid variations at the C-terminus provided new insights into the specificity of the interactions between TaCIPKs and TaCBLs, and indicated that the TaCBL-TaCIPK signaling pathway is very complex in wheat because of its hexaploid genome. The expressions of many TaCBLs and TaCIPKs were responsive to abiotic stresses (salt, cold, and simulated drought) and abscisic acid treatment. Transgenic Arabidopsis plants overexpressing TaCIPK24 exhibited improved salt tolerance through increased Na(+) efflux and an enhanced reactive oxygen species scavenging capacity. These results contribute to our understanding of the functions of CBL-CIPK complexes and provide the basis for selecting appropriate genes for in-depth functional studies of CBL-CIPK in wheat.

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 2 2010-01-01 2010-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851...-Raisins with Seeds § 52.1851 Sizes of raisins with seeds—layer or cluster. The size of Layer or Cluster... measurement as applicable to layer or cluster raisins with seeds are: (a) 3 Crown size or larger. “3 Crown...

Formation and characterization of Ta2O5/TaOx films formed by O ion implantation

NASA Astrophysics Data System (ADS)

Ruffell, S.; Kurunczi, P.; England, J.; Erokhin, Y.; Hautala, J.; Elliman, R. G.

2013-07-01

Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current-voltage and capacitance-voltage measurements. The measurements show that Ta2O5/TaOx oxide/suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

NASA Astrophysics Data System (ADS)

Falub, Claudiu V.; Rohrmann, Hartmut; Bless, Martin; Meduňa, Mojmír; Marioni, Miguel; Schneider, Daniel; Richter, Jan H.; Padrun, Marco

2017-05-01

Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8" Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100) nm thick magnetic layers and (2-20) nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ˜(7-120) Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency), while the coercivity was kept low, ˜(0.05-0.9) Oe. The alignment of the easy axis (EA) on the 8" wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM), X-ray reflectivity (XRR) with reciprocal space mapping (RSM) and magneto-optical Kerr effect (MOKE) measurements.

Chemical solution seed layer for rabits tapes

DOEpatents

Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

2014-06-10

A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

Profile of Polyphenol Compounds of Five Muscadine Grapes Cultivated in the United States and in Newly Adapted Locations in China

PubMed Central

Wei, Zheng; Luo, Jianming; Huang, Yu; Guo, Wenfeng; Zhang, Yali; Guan, Huan; Xu, Changmou; Lu, Jiang

2017-01-01

Polyphenol compositions and concentrations in skins and seeds of five muscadine grapes (cv. “Noble”, “Alachua”, “Carlos”, “Fry”, and “Granny Val”) cultivated in the United States (Tallahassee-Florida, TA-FL) and South China (Nanning-Guangxi, NN-GX and Pu’er-Yunnan, PE-YN) were investigated, using ultra performance liquid chromatography tandem triple quadrupole time-of-flight mass spectrometry (UPLC Triple TOF MS/MS). Fourteen ellagitannins were newly identified in these muscadine grapes. The grapes grown in NN-GX accumulated higher levels of ellagic acid, methyl brevifolin carboxylate, and ellagic acid glucoside in skins, and penta-O-galloyl-glucose in seeds. In PE-YN, more flavonols were detected in skins, and higher contents of flavan-3-ols, ellagic acid, and methyl gallate were identified in seeds. Abundant seed gallic acid and flavonols were found among the grapes grown in TA-FL. Based on principal component analysis (PCA) of 54 evaluation parameters, various cultivars grown in different locations could be grouped together and vice versa for the same cultivar cultivated in different regions. This is the result of the interaction between genotype and environmental conditions, which apparently influences the polyphenol synthesis and accumulation. PMID:28335440

Label-free detection of biomolecules with Ta2O5-based field effect devices

NASA Astrophysics Data System (ADS)

Branquinho, Rita Maria Mourao Salazar

Field-effect-based devices (FEDs) are becoming a basic structural element in a new generation of micro biosensors. Their numerous advantages such as small size, labelfree response and versatility, together with the possibility of on-chip integration of biosensor arrays with a future prospect of low-cost mass production, make their development highly desirable. The present thesis focuses on the study and optimization of tantalum pentoxide (Ta2O5) deposited by rf magnetron sputtering at room temperature, and their application as sensitive layer in biosensors based on field effect devices (BioFEDs). As such, the influence of several deposition parameters and post-processing annealing temperature and surface plasma treatment on the film¡¦s properties was investigated. Electrolyte-insulator-semiconductor (EIS) field-effect-based sensors comprising the optimized Ta2O5 sensitive layer were applied to the development of BioFEDs. Enzyme functionalized sensors (EnFEDs) were produced for penicillin detection. These sensors were also applied to the label free detection of DNA and the monitoring of its amplification via polymerase chain reaction (PCR), real time PCR (RT-PCR) and loop mediated isothermal amplification (LAMP). Ion sensitive field effect transistors (ISFETs) based on semiconductor oxides comprising the optimized Ta2O5 sensitive layer were also fabricated. EIS sensors comprising Ta2O5 films produced with optimized conditions demonstrated near Nernstian pH sensitivity, 58+/-0.3 mV/pH. These sensors were successfully applied to the label-free detection of penicillin and DNA. Penicillinase functionalized sensors showed a 29+/-7 mV/mM sensitivity towards penicillin detection up to 4 mM penicillin concentration. DNA detection was achieved with 30 mV/mugM sensitivity and DNA amplification monitoring with these sensors showed comparable results to those obtained with standard fluorescence based methods. Semiconductor oxides-based ISFETs with Ta2O5 sensitive layer were also produced. Finally, the high quality and sensitivity demonstrated by Ta2O5 thin films produced at low temperature by rf magnetron sputtering allows for their application as sensitive layer in field effect sensors.

Peculiarities of structure formation of layered metal-oxide system Ti-Ta-(Ti,Ta)xOy during electro-spark alloying and thermally stimulated modification

NASA Astrophysics Data System (ADS)

Fomina, Marina A.; Koshuro, Vladimir A.; Fomin, Aleksandr A.; Rodionov, Igor V.; Skaptsov, Aleksandr A.; Zakharevich, Andrey M.; Aman, Alexander; Oseev, Aleksandr; Hirsch, Soeren; Majcherek, Soeren

2016-04-01

The study focuses on high-performance combined electro-spark alloying of titanium and titanium alloy (VT1-0, VT16) surface and porous matrix structure oxidation. The metal-oxide coatings morphology is the result of melt drop transfer, heat treatment, and oxidation. The study establishes the influence of technological regimes of alloying and oxidation on morphological heterogeneity of biocompatible layered metal-oxide system Ti-Ta-(Ti,Ta)xOy. It was found that during electro-spark alloying the concentration of tantalum on the titanium surface ranges from 0.1 to 3.2 at.%. Morphology of the deposited splats is represented by uniformly grown crystals of titanium and tantalum oxides, which increase from nano- to submicron size.

The Seed Semipermeable Layer and Its Relation to Seed Quality Assessment in Four Grass Species.

PubMed

Lv, Yan Y; He, Xue Q; Hu, Xiao W; Wang, Yan R

2017-01-01

The existence of a semipermeable layer in grass seeds has been extensively reported, yet knowledge of its influence on tests for seed viability and vigor that depend upon measurement of electrical conductivity (EC) is limited. This study determined the presence and location of the semipermeable layer, and its relation to seed viability and vigor assessment, in seeds of four important grass species- Elymus nutans Griseb., Lolium perenne L., Leymus chinensis (Trin.) Tzvel., and Avena sativa L. Intact seeds of E. nutans, Lolium perenne , and Leymus chinensis exhibited little staining with triphenyl tetrazolium chloride (TTC), and there were no differences in EC between seeds with different germination percentage (GP) ( P > 0.05). After piercing the seed coat, however, all three species displayed positive staining with TTC, along with a significant negative correlation between EC and GP ( E. nutans : R 2 = 0.7708; Lolium perenne : R 2 = 0.8414; Leymus chinensis : R 2 = 0.859; P < 0.01). In contrast, both intact and pierced seeds of A. sativa possessed a permeable seed coat that showed positive staining with TTC and EC values that were significantly negatively correlated with GP [ R 2 = 0.9071 (intact) and 0.9597 (pierced); P < 0.01]. In commercial seed lots of A. sativa , a field emergence test indicated that EC showed a significant negative correlation with field emergence at two sowing dates ( R 2 = 0.6069, P < 0.01 and 0.5316, P < 0.05). Analysis of seed coat permeability revealed the presence of a semipermeable layer located in the seed coat adjacent to the endosperm in E. nutans, Lolium perenne , and Leymus chinensis ; however, no semipermeable layer was observed in A. sativa. This is the first report of the absence of a semipermeable layer in a grass species. The existence of a semipermeable layer is one of the most important factors affecting seed viability and vigor testing (based on EC measurement) in E. nutans, Lolium perenne , and Leymus chinensis . Increasing the permeability of the semipermeable layer, e.g., by piercing the seed coat, may permit the use of EC measurement to assess seed vigor in species that possess such a layer.

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

NASA Astrophysics Data System (ADS)

Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, R. J.

2000-09-01

This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ˜200 °C. The C 49-C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

Deposition and characterization of magnetron sputtered bcc tantalum

NASA Astrophysics Data System (ADS)

Patel, Anamika

The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum under increasing loads revealed high critical load values for failure (>15 N) for the bcc coatings versus the low load values (<9 N) for the beta coatings. The coating deposited on TaN interlayers on sputter-etched steel had better adhesion than those on steel surface without sputter etching. The results for this work have demonstrated that by controlling the various process parameters of do magnetron sputtering, high quality bcc Ta coatings of multi-micron thickness with excellent adhesion to steel can be made. An important contribution of this dissertation is in the enhancing an understanding of this process. The impact of this research will be in a number of fields where superior protective castings are needed. These include military applications, electronic components, chemical processing, and others.

Characterization and structural analysis of wild type and a non-abscission mutant at the development funiculus (Def) locus in Pisum sativum L.

PubMed

Ayeh, Kwadwo Owusu; Lee, YeonKyeong; Ambrose, Mike J; Hvoslef-Eide, Anne Kathrine

2009-06-23

In pea seeds (Pisum sativum L.), the Def locus defines an abscission event where the seed separates from the funicle through the intervening hilum region at maturity. A spontaneous mutation at this locus results in the seed failing to abscise from the funicle as occurs in wild type peas. In this work, structural differences between wild type peas that developed a distinct abscission zone (AZ) between the funicle and the seed coat and non-abscission def mutant were characterized. A clear abscission event was observed in wild type pea seeds that were associated with a distinct double palisade layers at the junction between the seed coat and funicle. Generally, mature seeds fully developed an AZ, which was not present in young wild type seeds. The AZ was formed exactly below the counter palisade layer. In contrast, the palisade layers at the junction of the seed coat and funicle were completely absent in the def mutant pea seeds and the cells in this region were seen to be extensions of surrounding parenchymatous cells. The Def wild type developed a distinct AZ associated with palisade layer and counterpalisade layer at the junction of the seed coat and funicle while the def mutant pea seed showed non-abscission and an absence of the double palisade layers in the same region. We conclude that the presence of the double palisade layer in the hilum of the wild type pea seeds plays an important structural role in AZ formation by delimiting the specific region between the seed coat and the funicle and may play a structural role in the AZ formation and subsequent detachment of the seed from the funicle.

Two transcription factors TaPpm1 and TaPpb1 co-regulate anthocyanin biosynthesis in purple pericarps of wheat

PubMed Central

Jiang, Wenhui; Liu, Tianxiang; Nan, Wenzhi; Jeewani, Diddugodage Chamila; Niu, Yanlu; Li, Chunlian; Shi, Xue; Wang, Cong; Wang, Jiahuan; Li, Yang; Wang, Zhonghua

2018-01-01

Abstract Purple pericarps of bread wheat (Triticum aestivum L.) are a useful source of dietary anthocyanins. Previous mapping results indicated that the purple pericarp trait is controlled by two complementary genes located on chromosomes 7D and 2A. However, the identity of the genes and the mechanisms by which they regulate the trait are unknown. In this study, two transcription factors were characterised as anthocyanin activators in purple pericarps: TaPpm1 (purple pericarp-MYB 1) and TaPpb1 (purple pericarp-bHLH 1). Three non-functional variants were detected in the coding sequence of TaPpm1 from non-purple seed lines, in which the function of TaPpm1 was destroyed either by insertion-induced frame shifts or truncated peptides. There were six 261-bp tandem repeats in the promoter region of TaPpb1 in the purple-grained varieties, while there was only one repeat unit present in the non-purple varieties. Furthermore, using yeast two-hybrid, dual luciferase, yeast one-hybrid, and transient assays, we were able to demonstrate that the interaction of TaPpm1 and TaPpb1 co-regulates the synthesis of anthocyanin. Overall, our results provide a better understanding of the molecular basis of anthocyanin synthesis in the wheat pericarp and indicate the existence of an integrated regulatory mechanism that controls production. PMID:29562292

Wheat Transcription Factor TaAREB3 Participates in Drought and Freezing Tolerances in Arabidopsis.

PubMed

Wang, Jingyi; Li, Qian; Mao, Xinguo; Li, Ang; Jing, Ruilian

2016-01-01

AREB (ABA response element binding) proteins in plants play direct regulatory roles in response to multiple stresses, but their functions in wheat (Triticum aestivum L.) are not clear. In the present study, TaAREB3, a new member of the AREB transcription factor family, was isolated from wheat. Sequence analysis showed that the TaAREB3 protein is composed of three parts, a conserved N-terminal, a variable M region, and a conserved C-terminal with a bZIP domain. It belongs to the group A subfamily of bZIP transcription factors. TaAREB3 was constitutively expressed in stems, leaves, florets, anthers, pistils, seeds, and most highly, in roots. TaAREB3 gene expression was induced with abscisic acid (ABA) and low temperature stress, and its protein was localized in the nucleus when transiently expressed in tobacco epidermal cells and stably expressed in transgenic Arabidopsis. TaAREB3 protein has transcriptional activation activity, and can bind to the ABRE cis-element in vitro. Overexpression of TaAREB3 in Arabidopsis not only enhanced ABA sensitivity, but also strengthened drought and freezing tolerances. TaAREB3 also activated RD29A, RD29B, COR15A, and COR47 by binding to their promoter regions in transgenic Arabidopsis. These results demonstrated that TaAREB3 plays an important role in drought and freezing tolerances in Arabidopsis.

Wheat Transcription Factor TaAREB3 Participates in Drought and Freezing Tolerances in Arabidopsis

PubMed Central

Wang, Jingyi; Li, Qian; Mao, Xinguo; Li, Ang; Jing, Ruilian

2016-01-01

AREB (ABA response element binding) proteins in plants play direct regulatory roles in response to multiple stresses, but their functions in wheat (Triticum aestivum L.) are not clear. In the present study, TaAREB3, a new member of the AREB transcription factor family, was isolated from wheat. Sequence analysis showed that the TaAREB3 protein is composed of three parts, a conserved N-terminal, a variable M region, and a conserved C-terminal with a bZIP domain. It belongs to the group A subfamily of bZIP transcription factors. TaAREB3 was constitutively expressed in stems, leaves, florets, anthers, pistils, seeds, and most highly, in roots. TaAREB3 gene expression was induced with abscisic acid (ABA) and low temperature stress, and its protein was localized in the nucleus when transiently expressed in tobacco epidermal cells and stably expressed in transgenic Arabidopsis. TaAREB3 protein has transcriptional activation activity, and can bind to the ABRE cis-element in vitro. Overexpression of TaAREB3 in Arabidopsis not only enhanced ABA sensitivity, but also strengthened drought and freezing tolerances. TaAREB3 also activated RD29A, RD29B, COR15A, and COR47 by binding to their promoter regions in transgenic Arabidopsis. These results demonstrated that TaAREB3 plays an important role in drought and freezing tolerances in Arabidopsis. PMID:26884722

Effects of Cr-N-ZrO 2 seed layer formed on glass substrates for longitudinal recording media

NASA Astrophysics Data System (ADS)

Suzuki, Hiroyuki; Djayaprawira, David D.; Takahashi, Yoshio; Ishikawa, Akira; Ono, Toshinori; Yahisa, Yotsuo

1999-03-01

Effects of Cr-N-ZrO 2 seed layer deposited on glass substrates before the deposition of C/Co-Cr-Pt/Cr-Ti layers for longitudinal recording media have been investigated. The product of v and Is, the activation volume and the saturation magnetization per unit volume, media noise Nd and S0/ Nd, which is the half value of peak-to-peak output voltage of an isolated pulse over Nd at 11.8 kFC/mm, are evaluated. We find that vIs is decreased by adding N and ZrO 2 to Cr seed layer. Nd is reduced as vIs decreases by adding nitrogen to the Cr seed layer. This is mainly due to the decreased grain sizes of both Cr-Ti underlayer and Co-Cr-Pt magnetic layer. The Nd is further reduced by the addition of ZrO 2 to the Cr-N seed layer. Highest S0/ Nd is achieved for the media with Cr-N-ZrO 2 seed layer. On the other hand, the media with Cr-ZrO 2 seed layer deposited without nitrogen show the higher Nd. Therefore the decrease of the grain size by addition of nitrogen into Ar is essential to reduce Nd, and the ZrO 2 addition to the Cr-N seed layer seems to enhance the effect of grain size reduction by nitrogen addition.

Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Jian; Batra, Vaishali; Han, Hui

The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structuremore » with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.« less

Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

NASA Astrophysics Data System (ADS)

Milosavljević, M.; Milinović, V.; Peruško, D.; Grce, A.; Stojanović, M.; Pjević, D.; Mitrić, M.; Kovač, J.; Homewood, K. P.

2011-10-01

The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (˜23 nm) and Ti (˜17 nm) layers of a total thickness ˜200 nm. They were irradiated at room temperature with 200 keV Ar +, to the fluences from 5 × 10 15 to 2 × 10 16 ions/cm 2. The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom ˜130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Δ H f = +2 kJ/mol). It is estimated that up to ˜5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures.

Functional Conservation and Divergence among Homoeologs of TaSPL20 and TaSPL21, Two SBP-Box Genes Governing Yield-Related Traits in Hexaploid Wheat1[OPEN

PubMed Central

Mao, Xinguo; Li, Ang; Wang, Jingyi; Chang, Xiaoping; Zhang, Xueyong

2017-01-01

Maintaining high and stable yields has become an increasing challenge in wheat breeding due to climate change. Although Squamosa-promoter binding protein (SBP)-box genes have important roles in plant development, very little is known about the actual biological functions of wheat SBP-box family members. Here, we dissect the functional conservation, divergence, and exploitation of homoeologs of two paralogous TaSPL wheat loci during domestication and breeding. TaSPL20 and TaSPL21 were highly expressed in the lemma and palea. Ectopic expressions of TaSPL20/21 in rice exhibited similar functions in terms of promoting panicle branching but had different functions during seed development. We characterized all six TaSPL20/21 genes located across the three homoeologous (A, B, and D) genomes. According to the functional analysis of naturally occurring variants in 20 environments, four favorable haplotypes were identified. Together, they reduced plant height by up to 27.5%, and TaSPL21-6D-HapII increased 1000-grain weight by 9.73%. Our study suggests that TaSPL20 and TaSPL21 homoeologs underwent diversification in function with each evolving its own distinctive characteristics. During domestication and breeding of wheat in China, favorable haplotypes of each set were selected and exploited to varying degrees due to their large effects on plant height and 1000-grain weight. PMID:28424214

Ectopic expression of TaOEP16-2-5B, a wheat plastid outer envelope protein gene, enhances heat and drought stress tolerance in transgenic Arabidopsis plants.

PubMed

Zang, Xinshan; Geng, Xiaoli; Liu, Kelu; Wang, Fei; Liu, Zhenshan; Zhang, Liyuan; Zhao, Yue; Tian, Xuejun; Hu, Zhaorong; Yao, Yingyin; Ni, Zhongfu; Xin, Mingming; Sun, Qixin; Peng, Huiru

2017-05-01

Abiotic stresses, such as heat and drought, are major environmental factors restricting crop productivity and quality worldwide. A plastid outer envelope protein gene, TaOEP16-2, was identified from our previous transcriptome analysis [1,2]. In this study, the isolation and functional characterization of the TaOEP16-2 gene was reported. Three homoeologous sequences of TaOEP16-2 were isolated from hexaploid wheat, which were localized on the chromosomes 5A, 5B and 5D, respectively. These three homoeologues exhibited different expression patterns under heat stress conditions, TaOEP16-2-5B was the dominant one, and TaOEP16-2-5B was selected for further analysis. Compared with wild type (WT) plants, transgenic Arabidopsis plants overexpressing the TaOEP16-2-5B gene exhibited enhanced tolerance to heat stress, which was supported by improved survival rate, strengthened cell membrane stability and increased sucrose content. It was also found that TaOEP16-2 was induced by drought stress and involved in drought stress tolerance. TaOEP16-2-5B has the same function in ABA-controlled seed germination as AtOEP16-2. Our results suggest that TaOEP16-2-5B plays an important role in heat and drought stress tolerance, and could be utilized in transgenic breeding of wheat and other crop plants. Copyright © 2017 Elsevier B.V. All rights reserved.

Interface perpendicular magnetic anisotropy in ultrathin Ta/NiFe/Pt layered structures

NASA Astrophysics Data System (ADS)

Hirayama, Shigeyuki; Kasai, Shinya; Mitani, Seiji

2018-01-01

Interface perpendicular magnetic anisotropy (PMA) in ultrathin Ta/NiFe/Pt layered structures was investigated through magnetization measurements. Ta/NiFe/Pt films with NiFe layer thickness (t) values of 2 nm or more showed typical in-plane magnetization curves, which was presumably due to the dominant contribution of the shape magnetic anisotropy. The thickness dependence of the saturation magnetization of the entire NiFe layer (M s) was well analyzed using the so-called dead-layer model, showing that the magnetically active part of the NiFe layer has saturation magnetization (M\\text{s}\\text{act}) independent of t and comparable to the bulk value. In the perpendicular direction, the saturation field H k was found to clearly decrease with decreasing t, while the effective field of shape magnetic anisotropy due to the active NiFe saturation magnetization M\\text{s}\\text{act} should be independent of t. These observations show that there exists interface PMA in the layered structures. The interface PMA energy density was determined to be ∼0.17 erg/cm2 using the dead-layer model. Motivated by the correlation observed between M s and H k, we also attempted to interpret the experimental results using an alternative approach beyond the dead-layer model; however, it gives only implications on the incomplete validity of the dead-layer model and no better understanding.

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Triyoso, D. H.; Gregory, R.; Schaeffer, J. K.; Werho, D.; Li, D.; Marcus, S.; Wilk, G. D.

2007-11-01

TaCy has been reported to have the appropriate work function for negative metal-oxide semiconductor metal in high-k metal-oxide field-effect transistors. As device size continues to shrink, a conformal deposition for metal gate electrodes is needed. In this work, we report on the development and characterization of a novel TaCy process by atomic layer deposition (ALD). Detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD). RBS and XPS analysis indicate that TaCy films are near-stoichiometric, nitrogen free, and have low oxygen impurities. Powder XRD spectra showed that ALD films have a cubic microstructure. XPS carbon bonding studies revealed that little or no glassy carbon is present in the bulk of the film. Excellent electrical properties are obtained using ALD TaCy as a metal gate electrode. Well-behaved capacitance-voltage characteristics with ALD HfO2 gate dielectrics are demonstrated for TaCy thicknesses of 50, 100, and 250 Å. A low fixed charge (˜2-4×10-11 cm-2) is observed for all ALD HfO2/ALD TaCy devices. Increasing the thickness of ALD TaCy results in a decrease in work function (4.77 to 4.54 eV) and lower threshold voltages.

Flux-mediated syntheses, structural characterization and low-temperature polymorphism of the p-type semiconductor Cu2Ta4O11

NASA Astrophysics Data System (ADS)

King, Nacole; Sullivan, Ian; Watkins-Curry, Pilanda; Chan, Julia Y.; Maggard, Paul A.

2016-04-01

A new low-temperature polymorph of the copper(I)-tantalate, α-Cu2Ta4O11, has been synthesized in a molten CuCl-flux reaction at 665 °C for 1 h and characterized by powder X-ray diffraction Rietveld refinements (space group Cc (#9), a=10.734(1) Å, b = 6.2506(3) Å, c=12.887(1) Å, β = 106.070(4)°). The α-Cu2Ta4O11 phase is a lower-symmetry monoclinic polymorph of the rhombohedral Cu2Ta4O11 structure (i.e., β-Cu2Ta4O11 space group R 3 ̅ c (#167), a = 6.2190(2) Å, c=37.107(1) Å), and related crystallographically by ahex=amono/√3, bhex=bmono, and chex=3cmonosinβmono. Its structure is similar to the rhombohedral β-Cu2Ta4O11 and is composed of single layers of highly-distorted and edge-shared TaO7 and TaO6 polyhedra alternating with layers of nearly linearly-coordinated Cu(I) cations and isolated TaO6 octahedra. Temperature dependent powder X-ray diffraction data show the α-Cu2Ta4O11 phase is relatively stable under vacuum at 223 K and 298 K, but reversibly transforms to β-Cu2Ta4O11 by at least 523 K and higher temperatures. The symmetry-lowering distortions from β-Cu2Ta4O11 to α-Cu2Ta4O11 arise from the out-of-center displacements of the Ta 5d0 cations in the TaO7 pentagonal bipyramids. The UV-vis diffuse reflectance spectrum of the monoclinic α-Cu2Ta4O11 shows an indirect bandgap transition of ∼2.6 eV, with the higher-energy direct transitions starting at ∼2.7 eV. Photoelectrochemical measurements on polycrystalline films of α-Cu2Ta4O11 show strong cathodic photocurrents of ∼1.5 mA/cm2 under AM 1.5 G solar irradiation.

Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

NASA Astrophysics Data System (ADS)

Liu, Wen-Feng; Zhang, Min-Gang; Zhang, Ke-Wei; Zhang, Hai-Jie; Xu, Xiao-Hong; Chai, Yue-Sheng

2016-11-01

Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. Program supported by the National Natural Science Foundation of China (Grant No. 51305290), the Higher Education Technical Innovation Project of Shanxi Province, China (Grant No. 2013133), the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals of Shanxi Province, China (Grant No. 2015003), and the Program for the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

Overexpression of TaNAC2D Displays Opposite Responses to Abiotic Stresses between Seedling and Mature Stage of Transgenic Arabidopsis

PubMed Central

Huang, Quanjun; Wang, Yan

2016-01-01

Environmental stresses frequently affect plant growth and development, and many genes have been found to be induced by unfavorable environmental conditions. Here, we reported the biological functions of TaNAC2D, a stress-related NAC (NAM, ATAF, and CUC) gene from wheat. TaNAC2D showed transcriptional activator activity in yeast. TaNAC2D-GFP fusion protein was localized in the nucleus of wheat mesophyll protoplasts. TaNAC2D transcript abundance was significantly induced by NaCl, PEG6000, and abscisic acid (ABA) at seedling stage, and repressed by NaCl and PEG6000 at mature plant stage. When TaNAC2D was introduced into Arabidopsis, the 35-day-old soil-grown TaNAC2D-overexpression (TaNAC2D-OX) plants displayed slower stomatal closure, higher water loss rate, and more sensitivity to salt and drought stresses compared with WT plants. In contrast, TaNAC2D-OX seedlings, grown on 1/2 MS medium supplemented with different concentrations of NaCl, Mannitol, and MV, had enhanced tolerances to salt, osmotic and oxidative stresses during seed germination and post-germination periods. The opposite stress-responsive phenotypes of transgenic Arabidopsis were consistent with the expression patterns of TaNAC2D in wheat. Moreover, under high salinity and dehydration conditions, three marker genes, including NCED3, RD29A, and RD29B, were down-regulated in 35-day-old TaNAC2D-OX plants grown in soil and up-regulated in 14-day-old TaNAC2D-OX seedlings grown on 1/2 MS medium. Our results suggest that the change in growth stages and environmental conditions may regulate TaNAC2D’s function. PMID:27933076

Effect of the seed layer on the Y0.5Gd0.5Ba2Cu3O7-σ film fabricated by PLD

NASA Astrophysics Data System (ADS)

Yao, Yanjie; Wang, Wei; Liu, Linfei; Lu, Saidan; Wu, Xiang; Zheng, Tong; Liu, Shunfan; Li, Yijie

2018-06-01

The surface morphology and internal residual stress have influence on the critical current density (Jc) of REBa2Cu3O7-σ (REBCO) coated conductor. In order to modulate them, a series of Y0.5Gd0.5Ba2Cu3O7-σ (YGBCO) films were prepared by pulsed laser deposition (PLD) through introducing a seed layer in this paper. The thicknesses of seed layer changes from about 2 nm to 30 nm. For comparison, a standard sample without seed layer was fabricated at the same deposition condition. The surface morphology was illustrated by Scanning electron microscopy (SEM). The surface roughness was scanned by Atomic force microscopy (AFM). The microstructure and internal strain were measured by X-ray Diffraction (XRD). DC four-probe method was used to measure the critical current of the samples at 77 K and self-field. As a result, all samples have high Jc of about 4 MA/cm2, while the self-field Jc of the YGBCO films can be promoted by the seed layer. The results of our research work are as follows. First of all, seed layer makes the deposition of the YGBCO layer much easier to control. By this way, we can decrease the surface roughness of the samples. Furthermore, the internal residual stress of the YGBCO films with seed layer decrease. Finally, the best thickness of the seed layer was found by summarizing and analyzing the conditions of seed layer.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

PubMed

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study

PubMed Central

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-01-01

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C. PMID:28773423

Protein-tannic acid multilayer films: A multifunctional material for microencapsulation of food-derived bioactives.

PubMed

Lau, Hooi Hong; Murney, Regan; Yakovlev, Nikolai L; Novoselova, Marina V; Lim, Su Hui; Roy, Nicole; Singh, Harjinder; Sukhorukov, Gleb B; Haigh, Brendan; Kiryukhin, Maxim V

2017-11-01

The benefits of various functional foods are often negated by stomach digestion and poor targeting to the lower gastrointestinal tract. Layer-by-Layer assembled protein-tannic acid (TA) films are suggested as a prospective material for microencapsulation of food-derived bioactive compounds. Bovine serum albumin (BSA)-TA and pepsin-TA films demonstrate linear growth of 2.8±0.1 and 4.2±0.1nm per bi-layer, correspondingly, as shown by ellipsometry. Both multilayer films are stable in simulated gastric fluid but degrade in simulated intestinal fluid. Their corresponding degradation constants are 0.026±0.006 and 0.347±0.005nm -1 min -1 . Milk proteins possessing enhanced adhesion to human intestinal surface, Immunoglobulin G (IgG) and β-Lactoglobulin (BLG), are explored to tailor targeting function to BSA-TA multilayer film. BLG does not adsorb onto the multilayer while IgG is successfully incorporated. Microcapsules prepared from the multilayer demonstrate 2.7 and 6.3 times higher adhesion to Caco-2 cells when IgG is introduced as an intermediate and the terminal layer, correspondingly. This developed material has a great potential for oral delivery of numerous active food-derived ingredients. Copyright © 2017 Elsevier Inc. All rights reserved.

A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior

NASA Astrophysics Data System (ADS)

Ma, Haili; Feng, Jie; Gao, Tian; Zhu, Xi

2017-12-01

In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfO x layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfO x layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfO x layer was changed by polarity-dependent drift of the oxygen vacancy ( V o), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.

Determination of the reaction rate coefficient of sulphide mine tailings deposited under water.

PubMed

Awoh, Akué Sylvette; Mbonimpa, Mamert; Bussière, Bruno

2013-10-15

The efficiency of a water cover to limit dissolved oxygen (DO) availability to underlying acid-generating mine tailings can be assessed by calculating the DO flux at the tailings-water interface. Fick's equations, which are generally used to calculate this flux, require knowing the effective DO diffusion coefficient (Dw) and the reaction (consumption) rate coefficient (Kr) of the tailings, or the DO concentration profile. Whereas Dw can be accurately estimated, few studies have measured the parameter Kr for submerged sulphide tailings. The objective of this study was to determine Kr for underwater sulphide tailings in a laboratory experiment. Samples of sulphide mine tailings (an approximately 6 cm layer) were placed in a cell under a water cover (approximately 2 cm) maintained at constant DO concentration. Two tailings were studied: TA1 with high sulphide content (83% pyrite) and TA2 with low sulphide content (2.8% pyrite). DO concentration was measured with a microelectrode at various depths above and below the tailings-water interface at 1 mm intervals. Results indicate that steady-state condition was rapidly attained. As expected, a diffusive boundary layer (DBL) was observed in all cases. An iterative back-calculation process using the numerical code POLLUTEv6 and taking the DBL into account provided the Kr values used to match calculated and experimental concentration profiles. Kr obtained for tailings TA1 and TA2 was about 80 d(-1) and 6.5 d(-1), respectively. For comparison purposes, Kr obtained from cell tests on tailings TA1 was lower than Kr calculated from the sulphate production rate obtained from shake-flask tests. Steady-state DO flux at the water-tailings interface was then calculated with POLLUTEv6 using tailings characteristics Dw and Kr. For the tested conditions, DO flux ranged from 608 to 758 mg O2/m(2)/d for tailings TA1 and from 177 to 221 mg O2/m(2)/d for tailings TA2. The impact of placing a protective layer of inert material over the tailings was also investigated for tailings TA1 (with high sulphide content). A protective layer of only 5 cm reduced the DO flux into the tailings at about 5 mg/m(2)/d, compared to 608 mg O2/m(2)/d without a protective layer, or an approximately 99% reduction in flux. Copyright © 2013 Elsevier Ltd. All rights reserved.

Quaternary Chalcogenide-Based Misfit Nanotubes LnS(Se)-TaS(Se)2 (Ln = La, Ce, Nd, and Ho): Synthesis and Atomic Structural Studies.

PubMed

Lajaunie, Luc; Radovsky, Gal; Tenne, Reshef; Arenal, Raul

2018-01-16

We have synthesized quaternary chalcogenide-based misfit nanotubes LnS(Se)-TaS 2 (Se) (Ln = La, Ce, Nd, and Ho). None of the compounds described here were reported in the literature as a bulk compound. The characterization of these nanotubes, at the atomic level, has been developed via different transmission electron microscopy techniques, including high-resolution scanning transmission electron microscopy, electron diffraction, and electron energy-loss spectroscopy. In particular, quantification at sub-nanometer scale was achieved by acquiring high-quality electron energy-loss spectra at high energy (∼between 1000 and 2500 eV). Remarkably, the sulfur was found to reside primarily in the distorted rocksalt LnS lattice, while the Se is associated with the hexagonal TaSe 2 site. Consequently, these quaternary misfit layered compounds in the form of nanostructures possess a double superstructure of La/Ta and S/Se with the same periodicity. In addition, the interlayer spacing between the layers and the interatomic distances within the layer vary systematically in the nanotubes, showing clear reduction when going from the lightest (La atom) to the heaviest (Ho) atom. Amorphous layers, of different nature, were observed at the surface of the nanotubes. For La-based NTs, the thin external amorphous layer (inferior to 10 nm) can be ascribed to a Se deficiency. Contrarily, for Ho-based NTs, the thick amorphous layer (between 10 and 20 nm) is clearly ascribed to oxidation. All of these findings helped us to understand the atomic structure of these new compounds and nanotubes thereof.

Retardation of quality changes in camel meat sausages by phenolic compounds and phenolic extracts.

PubMed

Maqsood, Sajid; Manheem, Kusaimah; Abushelaibi, Aisha; Kadim, Isam Tawfik

2016-11-01

Impact of tannic acid (TA), date seed extract (DSE), catechin (CT) and green tea extract (GTE) on lipid oxidation, microbial load and textural properties of camel meat sausages during 12 days of refrigerated storage was investigated. TA and CT showed higher activities in all antioxidative assays compared to DSE and GTE. Lipid oxidation and microbial growth was higher for control sausages when compared to other samples. TA and CT at a level of 200 mg/kg were more effective in retarding lipid oxidation and lowering microbial count (P < 0.05). Sausages treated with TA and DSE were found to have higher hardness, gumminess and chewiness values compared to other treatments (P < 0.05). Addition of different phenolic compounds or extract did not influence the sensory color of sausages. Furthermore, sensory quality was also found to be superior in TA and CT treated sausages. Therefore, pure phenolic compounds (TA and CT) proved to be more effective in retaining microbial and sensorial qualities of camel meat sausages compared to phenolic extracts (GTE and DSE) over 12 days of storage at 4°C. © 2016 Japanese Society of Animal Science.

Flower-like ZnO nanorod arrays grown on HF-etched Si (111): constraining relation between ZnO seed layer and Si (111)

NASA Astrophysics Data System (ADS)

Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.

2015-11-01

We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.

Effect of an Electrochemically Oxidized ZnO Seed Layer on ZnO Nanorods Grown by using Electrodeposition

NASA Astrophysics Data System (ADS)

Jeon, Woosung; Leem, Jae-Young

2018-05-01

ZnO nanorods were prepared on a Si substrate with and without a ZnO seed layer formed by electro-oxidation to investigate the effect of the seed layer on their growth. The ZnO nanorods grown on the ZnO seed layer had top surfaces that were flat whereas those grown without it had rough top surfaces, as observed in field-emission scanning electron microscopy images. In the Xray diffraction analysis, all ZnO nanorods showed preferential orientation with the (002) plane. In the case of ZnO nanorods prepared with a ZnO seed layer, the residual stress decreased, and the full width at half maximum of the ZnO (002) plane peak decreased. The photoluminescence spectra show a strong and narrow near-band-edge emission peak and high near-band-edge emission to deep-level emission peak ratio for the ZnO nanorods prepared with the seed layer. With respect to the photoresponse properties, the ZnO nanorods grown with the ZnO seed layer showed higher responsivity and faster rise/decay curves than those grown without it. Thus, the ZnO seed layer formed by electro-oxidation improves the structural, optical, and photoresponse properties of the ZnO nanorods formed on it. This method could serve as a new route for improving the properties of optoelectronic devices.

Molecular and Functional Characterization of Wheat ARGOS Genes Influencing Plant Growth and Stress Tolerance

PubMed Central

Zhao, Yue; Tian, Xuejun; Li, Yuanyuan; Zhang, Liyuan; Guan, Panfeng; Kou, Xiaoxia; Wang, Xiaobo; Xin, Mingming; Hu, Zhaorong; Yao, Yingyin; Ni, Zhongfu; Sun, Qixin; Peng, Huiru

2017-01-01

Auxin Regulated Gene involved in Organ Size (ARGOS) is significantly and positively associated with organ size and is involved in abiotic stress responses in plants. However, no studies on wheat ARGOS genes have been reported to date. In the present study, three TaARGOS homoeologous genes were isolated and located on chromosomes 4A, 4B, and 4D of bread wheat, all of which are highly conserved in wheat and its wild relatives. Comparisons of gene expression in different tissues demonstrated that the TaARGOSs were mainly expressed in the stem. Furthermore, the TaARGOS transcripts were significantly induced by drought, salinity, and various phytohormones. Transient expression of the TaARGOS-D protein in wheat protoplasts showed that TaARGOS-D localized to the endoplasmic reticulum. Moreover, overexpression of TaARGOS-D in Arabidopsis resulted in an enhanced germination rate, larger rosette diameter, increased rosette leaf area, and higher silique number than in wild-type (WT) plants. The roles of TaARGOS-D in the control of plant growth were further studied via RNA-seq, and it was found that 105 genes were differentially expressed; most of these genes were involved in ‘developmental processes.’ Interestingly, we also found that overexpression of TaARGOS-D in Arabidopsis improved drought and salinity tolerance and insensitivity to ABA relative to that in WT plants. Taken together, these results demonstrate that the TaARGOSs are involved in seed germination, seedling growth, and abiotic stress tolerance. PMID:28228774

Dynamic diffraction effects and coherent breathing oscillations in ultrafast electron diffraction in layered 1T-TaSeTe

PubMed Central

Wei, Linlin; Sun, Shuaishuai; Guo, Cong; Li, Zhongwen; Sun, Kai; Liu, Yu; Lu, Wenjian; Sun, Yuping; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2017-01-01

Anisotropic lattice movements due to the difference between intralayer and interlayer bonding are observed in the layered transition-metal dichalcogenide 1T-TaSeTe following femtosecond laser pulse excitation. Our ultrafast electron diffraction investigations using 4D-transmission electron microscopy (4D-TEM) clearly reveal that the intensity of Bragg reflection spots often changes remarkably due to the dynamic diffraction effects and anisotropic lattice movement. Importantly, the temporal diffracted intensity from a specific crystallographic plane depends on the deviation parameter s, which is commonly used in the theoretical study of diffraction intensity. Herein, we report on lattice thermalization and structural oscillations in layered 1T-TaSeTe, analyzed by dynamic diffraction theory. Ultrafast alterations of satellite spots arising from the charge density wave in the present system are also briefly discussed. PMID:28470025

Glaucoma Progression Detection by Retinal Nerve Fiber Layer Measurement Using Scanning Laser Polarimetry: Event and Trend Analysis

PubMed Central

Moon, Byung Gil; Cho, Jung Woo; Kang, Sung Yong; Yun, Sung-Cheol; Na, Jung Hwa; Lee, Youngrok; Kook, Michael S.

2012-01-01

Purpose To evaluate the use of scanning laser polarimetry (SLP, GDx VCC) to measure the retinal nerve fiber layer (RNFL) thickness in order to evaluate the progression of glaucoma. Methods Test-retest measurement variability was determined in 47 glaucomatous eyes. One eye each from 152 glaucomatous patients with at least 4 years of follow-up was enrolled. Visual field (VF) loss progression was determined by both event analysis (EA, Humphrey guided progression analysis) and trend analysis (TA, linear regression analysis of the visual field index). SLP progression was defined as a reduction of RNFL exceeding the predetermined repeatability coefficient in three consecutive exams, as compared to the baseline measure (EA). The slope of RNFL thickness change over time was determined by linear regression analysis (TA). Results Twenty-two eyes (14.5%) progressed according to the VF EA, 16 (10.5%) by VF TA, 37 (24.3%) by SLP EA and 19 (12.5%) by SLP TA. Agreement between VF and SLP progression was poor in both EA and TA (VF EA vs. SLP EA, k = 0.110; VF TA vs. SLP TA, k = 0.129). The mean (±standard deviation) progression rate of RNFL thickness as measured by SLP TA did not significantly differ between VF EA progressors and non-progressors (-0.224 ± 0.148 µm/yr vs. -0.218 ± 0.151 µm/yr, p = 0.874). SLP TA and EA showed similar levels of sensitivity when VF progression was considered as the reference standard. Conclusions RNFL thickness as measurement by SLP was shown to be capable of detecting glaucoma progression. Both EA and TA of SLP showed poor agreement with VF outcomes in detecting glaucoma progression. PMID:22670073

Glaucoma progression detection by retinal nerve fiber layer measurement using scanning laser polarimetry: event and trend analysis.

PubMed

Moon, Byung Gil; Sung, Kyung Rim; Cho, Jung Woo; Kang, Sung Yong; Yun, Sung-Cheol; Na, Jung Hwa; Lee, Youngrok; Kook, Michael S

2012-06-01

To evaluate the use of scanning laser polarimetry (SLP, GDx VCC) to measure the retinal nerve fiber layer (RNFL) thickness in order to evaluate the progression of glaucoma. Test-retest measurement variability was determined in 47 glaucomatous eyes. One eye each from 152 glaucomatous patients with at least 4 years of follow-up was enrolled. Visual field (VF) loss progression was determined by both event analysis (EA, Humphrey guided progression analysis) and trend analysis (TA, linear regression analysis of the visual field index). SLP progression was defined as a reduction of RNFL exceeding the predetermined repeatability coefficient in three consecutive exams, as compared to the baseline measure (EA). The slope of RNFL thickness change over time was determined by linear regression analysis (TA). Twenty-two eyes (14.5%) progressed according to the VF EA, 16 (10.5%) by VF TA, 37 (24.3%) by SLP EA and 19 (12.5%) by SLP TA. Agreement between VF and SLP progression was poor in both EA and TA (VF EA vs. SLP EA, k = 0.110; VF TA vs. SLP TA, k = 0.129). The mean (±standard deviation) progression rate of RNFL thickness as measured by SLP TA did not significantly differ between VF EA progressors and non-progressors (-0.224 ± 0.148 µm/yr vs. -0.218 ± 0.151 µm/yr, p = 0.874). SLP TA and EA showed similar levels of sensitivity when VF progression was considered as the reference standard. RNFL thickness as measurement by SLP was shown to be capable of detecting glaucoma progression. Both EA and TA of SLP showed poor agreement with VF outcomes in detecting glaucoma progression.

Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy

NASA Astrophysics Data System (ADS)

Kindsmüller, A.; Schmitz, C.; Wiemann, C.; Skaja, K.; Wouters, D. J.; Waser, R.; Schneider, C. M.; Dittmann, R.

2018-04-01

The switching mechanism of valence change resistive memory devices is widely accepted to be an ionic movement of oxygen vacancies resulting in a valence change of the metal cations. However, direct experimental proofs of valence changes in memristive devices are scarce. In this work, we have employed hard X-ray photoelectron emission microscopy (PEEM) to probe local valence changes in Pt/ZrOx/Ta memristive devices. The use of hard X-ray radiation increases the information depth, thus providing chemical information from buried layers. By extracting X-ray photoelectron spectra from different locations in the PEEM images, we show that zirconia in the active device area is reduced compared to a neighbouring region, confirming the valence change in the ZrOx film during electroforming. Furthermore, we succeeded in measuring the Ta 4f spectrum for two different resistance states on the same device. In both states, as well as outside the device region, the Ta electrode is composed of different suboxides without any metallic contribution, hinting to the formation of TaOx during the deposition of the Ta thin film. We observed a reduction of the Ta oxidation state in the low resistance state with respect to the high resistive state. This observation is contradictory to the established model, as the internal redistribution of oxygen between ZrOx and the Ta electrode during switching would lead to an oxidation of the Ta layer in the low resistance state. Instead, we have to conclude that the Ta electrode takes an active part in the switching process in our devices and that oxygen is released and reincorporated in the ZrOx/TaOx bilayer during switching. This is confirmed by the degradation of the high resistance state during endurance measurements under vacuum.

Iridium Interfacial Stack - IrIS

NASA Technical Reports Server (NTRS)

Spry, David

2012-01-01

Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the SiC chip circuitry.

Developmental patterning of sub-epidermal cells in the outer integument of Arabidopsis seeds

PubMed Central

Fiume, Elisa; Coen, Olivier; Xu, Wenjia; Lepiniec, Loïc

2017-01-01

The seed, the reproductive unit of angiosperms, is generally protected by the seed coat. The seed coat is made of one or two integuments, each comprising two epidermal cells layers and, in some cases, extra sub-epidermal cell layers. The thickness of the seed-coat affects several aspects of seed biology such as dormancy, germination and mortality. In Arabidopsis, the inner integument displays one or two sub-epidermal cell layers that originate from periclinal cell divisions of the innermost epidermal cell layer. By contrast, the outer integument was considered to be two-cell layered. Here, we show that sub-epidermal chalazal cells grow in between the epidermal outer integument cell layers to create an incomplete three-cell layered outer integument. We found that the MADS box transcription factor TRANSPARENT TESTA 16 represses growth of the chalaza and formation of sub-epidermal outer integument cells. Finally, we demonstrate that sub-epidermal cells of the outer and inner integument respond differently to the repressive mechanism mediated by FERTILIZATION INDEPENDENT SEED Polycomb group proteins and to fertilization signals. Our data suggest that integument cell origin rather than sub-epidermal cell position underlies different responses to fertilization. PMID:29141031

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

PubMed Central

Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M. Younus

2017-01-01

Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region. PMID:28079056

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 2 2010-01-01 2010-01-01 false Product description of Layer or (Cluster) raisins with... Raisins 1 § 52.1842 Product description of Layer or (Cluster) raisins with seeds. Raisins with Seeds that are referred to as Layer or Cluster raisins means that the raisins have not been detached from the...

RNAi-mediated male sterility of tobacco by silencing TA29.

PubMed

Nawaz-ul-Rehman, Muhammad Shah; Mansoor, Shahid; Khan, Asif Ali; Zafar, Yusuf; Briddon, Rob W

2007-06-01

The superior performance of F1 hybrids has a significant impact on agricultural productivity. For commercial application, the availability of an efficient system for obtaining male-sterile lines of crops is an essential prerequisite. Here we have investigated the use of RNA interference (RNAi) technology to silence a male-specific gene in the model host tobacco. TA29 is expressed exclusively in anthers at the time of microspore development. About 10 out of 13 tobacco lines transformed with a hairpin RNAi construct containing TA29 sequences were male sterile. Transgenic plants were phenotypically indistinguishable from non-transgenic plants. At the anthesis stage, pollen grains from transgenic, male-sterile plants were aborted and lysed in comparison to the round and fully developed pollen in non-transgenic plants. Microscopic analysis of anthers showed selective degradation of tapetum in transgenic plants with no microspore development. One week after self-pollination, the ovules of non-transgenic plants were double the size of those in transgenic plants, due to successful self-fertilization. Male sterile transgenic plants set seed normally, when cross-pollinated with pollen from non-transgenic plants, confirming no adverse effect on the female parts of the flower. These results show that silencing of male-specific genes by RNAi is potentially a useful tool for generating male-sterile lines for producing hybrid seed.

Influence of substrates and rutile seed layers on the assembly of hydrothermally grown rutile TiO2 nanorod arrays

NASA Astrophysics Data System (ADS)

Kalb, Julian; Dorman, James A.; Folger, Alena; Gerigk, Melanie; Knittel, Vanessa; Plüisch, Claudia S.; Trepka, Bastian; Lehr, Daniela; Chua, Emily; Goodge, Berit H.; Wittemann, Alexander; Scheu, Christina; Polarz, Sebastian; Schmidt-Mende, Lukas

2018-07-01

Rutile TiO2 nanorod arrays (NRAs) are applicable in various prospective technologies. Hydrothermal methods present a simple technique to fabricate such NRAs. In this report, we present the fabrication of seed layers for the hydrothermal growth of rutile TiO2 nanorods via sputter deposition, electron-beam evaporation, and sol-gel method and study the influence of each on the growth behavior. To satisfy the requirements of numerous applications, p-type silicon, platinum, levitating carbon membranes, a template made of polystyrene spheres, and commercial fluorine tin oxide (FTO) were employed as substrates. We document the structural properties of the TiO2 seed layers and describe the relationship between the characteristics of the seed crystals, the growth evolution, and the appearance of as-grown nanorods. Various growth stages of rutile TiO2 nanorods are compared depending on whether they are grown on polycrystalline TiO2 or FTO seed layers. In both cases, a homogenous TiO2 bottom layer is formed at the seed layer/substrate interface, which is essential for electronic applications such as hybrid solar cells. Detached NRAs illustrate the effect of rutile FTO and TiO2 on the porosity of this bottom layer. Further details about the formation process of this layer are obtained from the growth on confined seed layers fabricated by electron-beam lithography.

The study of the modes of Ta-Zr powder mixture non-vacuum electron-beam cladding on the surface of the cp-titanium plates

NASA Astrophysics Data System (ADS)

Samoylenko, V. V.; Lozhkina, E. A.; Polyakov, I. A.; Lenivtseva, O. G.; Ivanchik, I. S.; Matts, O. E.

2016-11-01

The effect of the modes of non-vacuum electron-beam cladding of Ta-Zr powder mixtures on the structure and properties of the layers formed on the surface of cp-titanium were studied. The mode of the electron-beam alloying of titanium with zirconium and tantalum, which ensured the formation of a defect-free layer with a high content of alloying elements was selected. Metallographic examination indicated the presence of a dendritic- and plate-type structure of cladded layers. The microhardness of the layers, formed at the optimum mode, was not changed in the cross section and was equal to 450 HV.

Developmental patterning of the sub-epidermal integument cell layer in Arabidopsis seeds

PubMed Central

Coen, Olivier; Fiume, Elisa; Xu, Wenjia; De Vos, Delphine; Lu, Jing; Pechoux, Christine; Lepiniec, Loïc

2017-01-01

Angiosperm seed development is a paradigm of tissue cross-talk. Proper seed formation requires spatial and temporal coordination of the fertilization products – embryo and endosperm – and the surrounding seed coat maternal tissue. In early Arabidopsis seed development, all seed integuments were thought to respond homogenously to endosperm growth. Here, we show that the sub-epidermal integument cell layer has a unique developmental program. We characterized the cell patterning of the sub-epidermal integument cell layer, which initiates a previously uncharacterized extra cell layer, and identified TRANSPARENT TESTA 16 and SEEDSTICK MADS box transcription factors as master regulators of its polar development and cell architecture. Our data indicate that the differentiation of the sub-epidermal integument cell layer is insensitive to endosperm growth alone and to the repressive mechanism established by FERTILIZATION INDEPENDENT ENDOSPERM and MULTICOPY SUPPRESSOR OF IRA1 Polycomb group proteins. This work demonstrates the different responses of epidermal and sub-epidermal integument cell layers to fertilization. PMID:28348169

Structural and optical properties of ZnO nanorods on Mg0.2Zn0.8O seed layers grown by hydrothermal method.

PubMed

Kim, Min Su; Kim, Do Yeob; Kim, Sung-O; Leem, Jae-Young

2013-05-01

ZnO nanorods were grown on the Mg0.2Zn0.8O seed layers with different thickness by hydrothermal method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out to investigate the effects of the Mg0.2Zn0.8O seed layer thickness on the structural and the optical properties of the ZnO nanorods. The residual stress in the Mg0.2Zn0.8O seed layers was depended on the thickness while the texture coefficient of the Mg0.2Zn0.8O seed layers was not affected significantly. The smaller full width at half maximum (FWHM) of the ZnO (002) diffraction and near-band-edge emission (NBE) peak and the larger average grain size were observed from the ZnO nanorods grown on the Mg0.2Zn0.8O seed layers with 5 layers (thickness of 350 nm), which indicate the enhancement the structural and the optical properties of the ZnO nanorods.

Growth mechanism, surface and optical properties of ZnO nanostructures deposited on various Au-seeded thickness obtained by mist-atomization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afaah, A. N., E-mail: afaahabdullah@yahoo.com; Aadila, A., E-mail: aadilaazizali@gmail.com; Asib, N. A. M., E-mail: amierahasib@yahoo.com

2016-07-06

In this paper, growth mechanisms of ZnO nanostructures on non-seeded glass, 6 nm and 12 nm Au seed layer obtained by mist-atomization was proposed. ZnO films were successfully deposited on glass substrate with different thickness of Au seed layer i.e. 6 nm and 12 nm. The surface and optical properties of the prepared samples were investigated using Field emission scanning electron microscopy (FESEM) and photoluminescence (PL). FESEM micrograph show that ZnO nanostructure deposited on 6 nm Au seed layer has uniform formation and well distributed. From PL spectroscopy, the UV emission shows that ZnO deposited on 6 nm Au seedmore » layer has the more intense UV intensity which proved that high crystal quality of nanostructured ZnO deposited on 6 nm Au seed layer.« less

Fruit and seed heteromorphism in the cold desert annual ephemeral Diptychocarpus strictus (Brassicaceae) and possible adaptive significance.

PubMed

Lu, Juanjuan; Tan, Dunyan; Baskin, Jerry M; Baskin, Carol C

2010-06-01

Diptychocarpus strictus is an annual ephemeral in the cold desert of northwest China that produces heteromorphic fruits and seeds. The primary aims of this study were to characterize the morphology and anatomy of fruits and seeds of this species and compare the role of fruit and seed heteromorphism in dispersal and germination. Shape, size, mass and dispersal of siliques and seeds and the thickness of the mucilage layer on seeds were measured, and the anatomy of siliques and seeds, the role of seed mucilage in water absorption/dehydration, germination and adherence of seeds to soil particles, the role of pericarp of lower siliques in seed dormancy and seed after-ripening and germination phenology were studied using standard procedures. Plants produce dehiscent upper siliques with a thin pericarp containing seeds with large wings and a thick mucilage layer and indehiscent lower siliques with a thick pericarp containing nearly wingless seeds with a thin mucilage layer. The dispersal ability of seeds from the upper siliques was much greater than that of intact lower siliques. Mucilage increased the amount of water absorbed by seeds and decreased the rate of dehydration. Seeds with a thick mucilage layer adhered to soil particles much better than those with a thin mucilage layer or those from which mucilage had been removed. Fresh seeds were physiologically dormant and after-ripened during summer. Non-dormant seeds germinated to high percentages in light and in darkness. Germination of seeds from upper siliques is delayed until spring primarily by drought in summer and autumn, whereas the thick, indehiscent pericarp prevents germination for >1 year of seeds retained in lower siliques. The life cycle of D. strictus is morphologically and physiologically adapted to the cold desert environment in time and space via a combination of characters associated with fruit and seed heteromorphism.

Seed layer effect on different properties and UV detection capability of hydrothermally grown ZnO nanorods over SiO2/p-Si substrate

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Byrareddy, C. R.; Kumar, Pesala Sudheer; Yadav, Aniruddh Bahadur

2018-05-01

Hydrothermally grown one dimensional ZnO nanostructures are among the most widely used semiconductor materials to build high-efficiency electronic devices for various applications. Few researchers have addressed the growth mechanism and effect of ZnO seed layer on different properties of ZnO nanorods grown by hydrothermal method, instead, no one has synthesized ZnO nanorod over SiO2/p-Si substrate. The aim of this study is to study the effect of ZnO seed layer and the growth mechanism of ZnO nanorods over SiO2/p-Si substrate. To achieve the goal, we have synthesized ZnO nanorods over different thickness ZnO seed layers by using the hydrothermal method on SiO2/p-Si substrate. The effects of c-plane area ratio were identified for the growth rate of c-plane, reaction rate constant and stagnant layer thickness also calculated by using a modified rate growth equation. We have identified maximum seed layer thickness for the growth of vertical ZnO nanorod. A step dislocation in the ZnO nanorods grown on 150and 200 nm thick seed layers was observed, the magnitude of Burges vector was calculated for this disorder. The seed layer and ZnO nanorods were characterized by AFM, XPS, UV-visible, XRD (X-ray diffraction, and SEM(scanning electron microscope). To justify the application of the grown ZnO nanorods Ti/Au was deposited over ZnO nanorods grown over all seed layers for the fabrication of photoconductor type UV detector.

Chemical Mechanical Polishing of Ruthenium, Cobalt, and Black Diamond Films

NASA Astrophysics Data System (ADS)

Peethala, Brown Cornelius

Ta/TaN bilayer serves as the diffusion barrier as well as the adhesion promoter between Cu and the dielectric in 32 nm technology devices. A key concern of future technology devices (<32 nm) for Cu interconnects is the extendibility of TaN/Ta/Cu-seed to sustain the diffusion barrier performance without forming voids and meeting the requirements of low resistivity. These are very challenging requirements for the Ta/TaN bilayer at a thickness of < 5 nm. Hence, ruthenium (Ru) and cobalt (Co), among these, are being considered for replacing Ta/TaN as barrier materials for Cu interconnects in future technology devices. Both are very attractive for reasons such as the capability of direct electroplating of Cu, lower resistivity and for a single layer (vs. a bilayer of Ta/TaN) to act as a barrier. During patterning, they need to be planarized using conventional chemical mechanical polishing (CMP) to achieve a planar surface. However, CMP of these new barrier materials requires novel slurry compositions that provide adequate selectivity towards Cu and dielectric films, and minimize galvanic corrosion. Apart from the application as a barrier, Ru also has been proposed as a lower electrode material in metal-insulator-metal capacitors where high (> 50 nm/min) Ru removal rates (RRs) are required and as a stop layer in magnetic recording head fabrication where low (< 1 nm/min) Ru RRs are desired. A Ru removal rate of ˜60 nm/min was achieved with a colloidal silica-based slurry at pH 9 using potassium periodate (KIO4) as the oxidizer. At this pH, toxic RuO4 does not form eliminating a major challenge in Ru CMP. This removal rate was obtained by increasing the solubility of KIO4 by adding potassium hydroxide (KOH). It was also determined that increased the ionic strength is not responsible for the observed increase in Ru removal rate. Benzotirazole (BTA) and ascorbic acid were added to the slurry to reduce the open circuit potential (Eoc) difference between Cu and Ru to ˜20 mV from about 550 mV in the absence of additives. A removal mechanism with KIO4 as the oxidizing agent is proposed based on the formation of several ruthenium oxides, some of which formed residues on the polishing pad below a pH of ˜7. Next, a colloidal silica-based slurry with hydrogen peroxide (H 2O2) as the oxidizer (1 wt%), and arginine (0.5 wt%) as the complexing agent was developed to polish Co at pH 10. The Eoc between Cu and Co at the above conditions was reduced to ˜20 mV compared to ˜250 mV in the absence of additives, suggestive of reduced galvanic corrosion during the Co polishing. The slurry also has the advantages of good post-polish surface quality at pH 10, and no dissolution rate. BTA at a concentration of 5mM in this slurry inhibited Cu dissolution rates and yielded a Cu/Co RR ratio of ˜0.8:1 while the open potential difference between Cu and Co was further reduced to ˜10 mV. The role of H2O2, complexing agent (arginine), silica abrasives, and Co removal mechanism during polishing is discussed. Also, during the barrier CMP, a part of the underlying low-k (SiCOH) material has to be polished to remove any modified surface film. Black Diamond (BD) is a SiCOH type material with a dielectric constant of ˜2.9 and here, polishing of BD was investigated in order to understand the polishing behavior of SiCOH-based materials using the barrier slurries. The slurries that were developed for polishing Co and Ru in this work and Ta/TaN (earlier) were investigated for polishing the Black Diamond (BD) films. Here, it was found that ionic salts play a major role in enhancing the BD RRs to ˜65 nm/min compared to no removal rates in the absence of additives. A removal mechanism in the presence of ionic salts is proposed.

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2010 CFR

2010-01-01

... quality of Layer or Cluster Raisins with Seeds that have similar varietal characteristics; that have a... outlined in Table III of this subpart. (b) “U.S. Grade B” is the quality of Layer or Cluster Raisins with.... (c) “Substandard” is the quality of Layer or Cluster Raisins with Seeds that fail to meet the...

Formation of qualified BaHfO3 doped Y0.5Gd0.5Ba2Cu3O7-δ film on CeO2 buffered IBAD-MgO tape by self-seeding pulsed laser deposition

NASA Astrophysics Data System (ADS)

Liu, Linfei; Wang, Wei; Yao, Yanjie; Wu, Xiang; Lu, Saidan; Li, Yijie

2018-05-01

Improvement in the in-filed transport properties of REBa2Cu3O7-δ (RE = rare earth elements, REBCO) coated conductor is needed to meet the performance requirements for various practical applications, which can be accomplished by introducing artificial pinning centers (APCs), such as second phase dopant. However, with increasing dopant level the critical current density Jc at 77 K in zero applied magnetic field decreases. In this paper, in order to improve Jc we propose a seed layer technique. 5 mol% BaHfO3 (BHO) doped Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) epilayer with an inserted seed layer was grown on CeO2 buffered ion beam assisted deposition MgO (IBAD-MgO) tape by pulsed laser deposition. The effect of the conditions employed to prepare the seed layer, including tape moving speed and chemical composition, on the quality of 5 mol% BHO doped YGBCO epilayer was systematically investigated by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM) observations. It was found that all the samples with seed layer have higher Jc (77 K, self-field) than the 5 mol% BHO doped YGBCO film without seed layer. The seed layer could inhibit deterioration of the Jc at 77 K and self-filed. Especially, the self-seed layer (5 mol% BHO doped YGBCO seed layer) was more effective in improving the crystal quality, surface morphology and superconducting performance. At 4.2 K, the 5 mol% BHO doped YGBCO film with 4 nm thick self-seed layer had a very high flux pinning force density Fp of 860 GN/m3 for B//c under a 9 T field, and more importantly, the peak of the Fp curve was not observed.

Microstructure and high temperature oxidation resistance of Ti-Ni gradient coating on TA2 titanium alloy fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Liu, Fencheng; Mao, Yuqing; Lin, Xin; Zhou, Baosheng; Qian, Tao

2016-09-01

To improve the high temperature oxidation resistance of TA2 titanium alloy, a gradient Ni-Ti coating was laser cladded on the surface of the TA2 titanium alloy substrate, and the microstructure and oxidation behavior of the laser cladded coating were investigated experimentally. The gradient coating with a thickness of about 420-490 μm contains two different layers, e.g. a bright layer with coarse equiaxed grain and a dark layer with fine and columnar dendrites, and a transition layer with a thickness of about 10 μm exists between the substrate and the cladded coating. NiTi, NiTi2 and Ni3Ti intermetallic compounds are the main constructive phases of the laser cladded coating. The appearance of these phases enhances the microhardness, and the dense structure of the coating improves its oxidation resistance. The solidification procedure of the gradient coating is analyzed and different kinds of solidification processes occur due to the heat dissipation during the laser cladding process.

Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Sun Ho; Lee, Kee Sun; Green Home Energy Technology Center, Cheonan City

Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showedmore » 0.08 of the emissivity, including {approx}61% of the transmittance in the visible region (wavelength: 550 nm).« less

Seed morphology, germination phenology, and capacity to form a seed bank in six herbaceous layer apiaceae species of the eastern deciduous forest

Treesearch

Tracy S. Hawkins; Jerry M. Baskin; Carol C. Baskin

2007-01-01

We compared seed mass, seed morphology, and long-term germination phenology of three monocarpic (MI and three polycarpic (P) Apiaceae species of the herbaceous layer of the Eastern Deciduous Forest. Seeds (mericarps) of the six species differed considerably in mass, shape, and ornamentation. Mean seed masses were ranked Cryptotaenia canadensis (M)...

Comparison of reproduce signal and noise of conventional and keepered CoCrTa/Cr thin film media

NASA Astrophysics Data System (ADS)

Sin, Kyusik; Ding, Juren; Glijer, Pawel; Sivertsen, John M.; Judy, Jack H.; Zhu, Jian-Gang

1994-05-01

We studied keepered high coercivity CoCrTa/Cr thin film media with a Cr isolation layer between the CoCrTa storage and an overcoating of an isotropic NiFe soft magnetic layer. The influence of the thickness of the NiFe and Cr layers, and the effects of head bias current on the signal output and noise, were studied using a thin film head. The reproduced signal increased by 7.3 dB, but the signal-to-noise ratio decreased by 4 dB at a linear density of 2100 fr/mm (53.3 kfr/in.) with a 1000 Å thick NiFe keeper layer. The medium noise increased with increasing NiFe thickness and the signal output decreased with decreasing Cr thickness. A low output signal obtained with very thin Cr may be due to magnetic interactions between the keeper layer and magnetic media layer. It is observed that signal distortion and timing asymmetry of the output signals depend on the thickness of the keeper layer and the head bias current. The signal distortion increased and the timing asymmetry decreased as the head bias current was increased. These results may be associated with different permeability of the keeper under the poles of the thin film head due to the superposition of head bias and bit fields.

Effect of Ti seed layers on structure of self-organized epitaxial face-centered-cubic-Ag(001) oriented nanodots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamiko, M.; Nose, K.; Suenaga, R.

2013-12-28

The influence of Ti seed layers on the structure of self-organized Ag nanodots, obtained with a Ti seed-layer-assisted thermal agglomeration method, has been investigated. The samples were grown on MgO(001) single crystal substrates by RF magnetron sputter deposition. The samples were deposited at room temperature and post-annealed at 350 °C for 4 h while maintaining the chamber vacuum conditions. The results of atomic force microscopy (AFM) observations indicated that the insertion of the Ti seed layer (0.6–5.0 nm) between the MgO substrate and Ag layer promotes the agglomeration process, forming the nanodot array. Comparisons between the AFM images revealed thatmore » the size of the Ag nanodots was increased with an increase in the Ti seed layer thickness. The atomic concentration of the film surface was confirmed by X-ray photoelectron spectroscopy (XPS). The XPS result suggested that the nanodot surface mainly consisted of Ag. Moreover, X-ray diffraction results proved that the initial deposition of the Ti seed layer (0.6–5.0 nm) onto MgO(001) prior to the Ag deposition yielded high-quality fcc-Ag(001) oriented epitaxial nanodots. The optical absorbance spectra of the fabricated Ag nanodots with various Ti seed layer thicknesses were obtained in the visible light range.« less

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin; Hinata, Shintaro

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain sizemore » in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.« less

A CBL-Interacting Protein Kinase TaCIPK2 Confers Drought Tolerance in Transgenic Tobacco Plants through Regulating the Stomatal Movement.

PubMed

Wang, Yan; Sun, Tao; Li, Tingting; Wang, Meng; Yang, Guangxiao; He, Guangyuan

2016-01-01

In plants, the CBL-CIPK signaling pathways play key roles in the response to abiotic stresses. However, functional studies of CIPKs in the important staple crop wheat are very rare. In this study, we identified a CIPK gene from wheat, designated TaCIPK2. Expression analysis results showed that TaCIPK2 could be up-regulated in wheat leaves by polyethylene glycol, abscisic acid and H2O2 treatments. Subcellular localization analyses revealed that TaCIPK2 was present in whole wheat epidermal cells. A yeast two-hybrid assay indicated that TaCIPK2 interacted with TaCBL1, 2, 3 and 4 in vitro. Transgenic tobacco plants over-expressing TaCIPK2 exhibited increased drought tolerance, indicated by a larger proportion of green cotyledons and higher survival rates under the osmotic and drought stress conditions compared with control plants. Additionally, physiological index analyses revealed that the transgenic tobacco plants had lower water loss rates and ion leakage, accumulated less malondialdehyde and H2O2, and had higher catalase and superoxide dismutase activities than the control plants. The transgenic plants also exhibited faster stomatal closure following exposure to osmotic stress conditions. The seed germination rates and stomatal aperture of TaCIPK2-overexpressing tobacco plants decreased after exogenous abscisic acid treatment was applied, implying that the transgenic tobacco plants were more sensitive to exogenous abscisic acid than the control plants. Our results indicate that TaCIPK2 plays a positive regulatory role in drought stress responses in transgenic tobacco plants.

The tae-miR408-Mediated Control of TaTOC1 Genes Transcription Is Required for the Regulation of Heading Time in Wheat1[OPEN

PubMed Central

Zhao, Xiang Yu; Hong, Po; Chen, Xiang Bin; Ye, Xing Guo; Pan, Yan You; Wang, Jian

2016-01-01

Timing of flowering is not only an interesting topic in developmental biology, but it also plays a significant role in agriculture for its effects on the maturation time of seed. The hexaploid wheat (Triticum aestivum) is one of the most important crop species whose flowering time, i.e. heading time, greatly influences yield. However, it remains unclear whether and how microRNAs regulate heading time in it. In our current study, we identified the tae-miR408 in wheat and its targets in vivo, including Triticum aestivum TIMING OF CAB EXPRESSION-A1 (TaTOC-A1), TaTOC-B1, and TaTOC-D1. The tae-miR408 levels were reciprocal to those of TaTOC1s under long-day and short-day conditions. Wheat plants with a knockdown of TaTOC1s via RNA interference and overexpression of tae-miR408 showed early-heading phenotype. Furthermore, TaTOC1s expression was down-regulated by the tae-miR408 in the hexaploid wheat. In addition, other important agronomic traits in wheat, such as plant height and flag leaf angle, were regulated by both tae-miR408 and TaTOC1s. Thus, our results suggested that the tae-miR408 functions in the wheat heading time by mediating TaTOC1s expression, and the study provides important new information on the mechanism underlying heading time regulation in wheat. PMID:26768600

The tae-miR408-Mediated Control of TaTOC1 Genes Transcription Is Required for the Regulation of Heading Time in Wheat.

PubMed

Zhao, Xiang Yu; Hong, Po; Wu, Ji Yun; Chen, Xiang Bin; Ye, Xing Guo; Pan, Yan You; Wang, Jian; Zhang, Xian Sheng

2016-03-01

Timing of flowering is not only an interesting topic in developmental biology, but it also plays a significant role in agriculture for its effects on the maturation time of seed. The hexaploid wheat (Triticum aestivum) is one of the most important crop species whose flowering time, i.e. heading time, greatly influences yield. However, it remains unclear whether and how microRNAs regulate heading time in it. In our current study, we identified the tae-miR408 in wheat and its targets in vivo, including Triticum aestivum TIMING OF CAB EXPRESSION-A1 (TaTOC-A1), TaTOC-B1, and TaTOC-D1. The tae-miR408 levels were reciprocal to those of TaTOC1s under long-day and short-day conditions. Wheat plants with a knockdown of TaTOC1s via RNA interference and overexpression of tae-miR408 showed early-heading phenotype. Furthermore, TaTOC1s expression was down-regulated by the tae-miR408 in the hexaploid wheat. In addition, other important agronomic traits in wheat, such as plant height and flag leaf angle, were regulated by both tae-miR408 and TaTOC1s. Thus, our results suggested that the tae-miR408 functions in the wheat heading time by mediating TaTOC1s expression, and the study provides important new information on the mechanism underlying heading time regulation in wheat. © 2016 American Society of Plant Biologists. All Rights Reserved.

Reusable crucible for containing corrosive liquids

DOEpatents

de Pruneda, Jean A. H.

1995-01-01

A reusable, non-wetting, corrosion-resistant material suitable for containment of corrosive liquids is formed of a tantalum or tantalum alloy substrate that is permeated with carbon atoms. The substrate is carburized to form surface layers of TaC and Ta.sub.2 C, and then is heated at high temperature under vacuum until the carbon atoms in the carbide layers diffuse throughout the substrate to form a solid solution of carbon atoms randomly interspersed in the tantalum or tantalum alloy lattice.

Reusable crucible for containing corrosive liquids

DOEpatents

Pruneda, J.A.H. de.

1995-01-24

A reusable, non-wetting, corrosion-resistant material suitable for containment of corrosive liquids is formed of a tantalum or tantalum alloy substrate that is permeated with carbon atoms. The substrate is carburized to form surface layers of TaC and Ta[sub 2]C, and then is heated at high temperature under vacuum until the carbon atoms in the carbide layers diffuse throughout the substrate to form a solid solution of carbon atoms randomly interspersed in the tantalum or tantalum alloy lattice. 10 figures.

The effect of different oxygen exchange layers on TaO x based RRAM devices

NASA Astrophysics Data System (ADS)

Alamgir, Zahiruddin; Holt, Joshua; Beckmann, Karsten; Cady, Nathaniel C.

2018-01-01

In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaO x based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

Dependence of seed layer thickness on sensitivity of nano-ZnO cholesterol biosensor

NASA Astrophysics Data System (ADS)

Lu, Yang-Ming; Wang, Po-Chin; Tang, Jian-Fu; Chu, Sheng-Yuan

2017-01-01

The anemone-like ZnO nanostructures have been synthesized by hydrothermal method and were further adsorbed immobilized cholesterol oxidase (ChOx) as a nano-biosensor. In this study, the sensitivity of biosensor were improved by varying the thickness of the ZnO seed layer. The SEM analysis showed changes in thickness of seed layer will not affect the morphologies of anemone-like ZnO nanostructures. The X-ray Diffraction patterns showed that the (002) plane of anemone-like ZnO grown on various thickness of the seed layer was more prouded than other crystal plane. Abioelectrode (ChOx/ZnO/ITO/glass) grown on the 30nm of ZnO seed layer with high sensitivity of 57.533μAmM-1cm-2 (1.488 μA (mg/dl) -1cm-2), a wide sensitive range from 25 to 500 mg/dl. It is concluded that the thinner sputtered ZnO seed layer for growing anemone-like ZnO nanostructure can effectively improve the sensitivity of the ZnO biosensor.

Antilisterial activity and consumer acceptance of irradiated chicken breast meat vacuum-infused with grape seed and green tea extracts and tartaric acid.

PubMed

Over, K F; Hettiarachchy, N S; Perumalla, A V S; Johnson, M G; Meullenet, J-F; Dickson, J S; Holtzbauer, M J; Niebuhr, S E; Davis, B

2010-09-01

Contamination of poultry with pathogenic bacteria contributes to human foodborne disease, causes damage to industry brand names, and has a significant economic impact on the food industry in the form of both damage to industry brand names and losses associated with recalls. Irradiation is a safe and effective means of decontaminating poultry products, but the maximum dose strengths allowed negatively impact poultry sensory quality characteristics. The 1st objective of this study was to investigate the potential interactive inhibitory effects of natural antimicrobials as components of a vacuum-marination in addition to various dose levels of irradiation. Tartaric acid (TA) at 2 levels and grape seed (GS) and green tea (GT) extracts were combined, vacuum-infused into chicken breast fillets, and irradiated at 1, 2, and 3 kGy by electron beam irradiation. The 2nd objective was to use a consumer test group to evaluate TA and plant extract infusion into chicken breast fillets with and without irradiation at 2 kGy on overall impression, flavor, texture, appearance, and tenderness. The results showed that samples vacuum-infused with TA at 37.5 and 75.0 mM and irradiated at 1 kGy significantly reduced Listeria monocytogenes (L.m.) levels by 2 and 3 log CFU/g compared to the control after 12 d of refrigerated storage. Vacuum-infusion of TA at 37.5 and 75.0 mM at 2 and 3 kGy irradiation, reduced L.m. to near nondetectable levels. The addition of TA and GS and GT to chicken breast fillets with and without irradiation did not significantly impact consumer preference, tenderness, appearance, or flavor. The addition of tartaric acid and natural plant extracts to chicken marinades could contribute to the prevention of L.m. contamination.

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

2017-09-01

This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

NASA Astrophysics Data System (ADS)

Hwang, Soo Min; Lee, Seung Muk; Park, Kyung; Lee, Myung Soo; Joo, Jinho; Lim, Jun Hyung; Kim, Hyoungsub; Yoon, Jae Jin; Kim, Young Dong

2011-01-01

High-permittivity (k) ZrO2/Si(100) films were fabricated by a sol-gel technique and the microstructural evolution with the annealing temperature (Ta) was correlated with the variation of their electrical performance. With increasing Ta, the ZrO2 films crystallized into a tetragonal (t) phase which was maintained until 700 °C at nanoscale thicknesses. Although the formation of the t-ZrO2 phase obviously enhanced the k value of the ZrO2 dielectric layer, the maximum capacitance in accumulation was decreased by the growth of a low-k interfacial layer (IL) between ZrO2 and Si with increasing Ta. On the other hand, the gate leakage current was remarkably depressed with increasing Ta probably due to the combined effects of the increased IL thickness, optical band gap of ZrO2, and density of ZrO2 and decreased remnant organic components.

Ultrathin diamond-like carbon film coated silver nanoparticles-based substrates for surface-enhanced Raman spectroscopy.

PubMed

Liu, Fanxin; Cao, Zhishen; Tang, Chaojun; Chen, Ling; Wang, Zhenlin

2010-05-25

We have demonstrated that by coating with a thin dielectric layer of tetrahedral amorphous carbon (ta-C), a biocompatible and optical transparent material in the visible range, the Ag nanoparticle-based substrate becomes extremely suitable for surface-enhanced Raman spectroscopy (SERS). Our measurements show that a 10 A or thicker ta-C layer becomes efficient to protect the oxygen-free Ag in air and prevent Ag ionizing in aqueous solutions. Furthermore, the Ag nanoparticles substrate coated with a 10 A ta-C film shows a higher enhancement of Raman signals than the uncoated substrate. These observations are further supported by our numerical simulations. We suggest that biomolecule detections in analytic assays could be easily realized using ta-C-coated Ag-based substrate for SERS especially in the visible range. The coated substrate also has higher mechanical stability, chemical inertness, and technological compliance, and may be useful, for example, to enhance TiO(2) photocatalysis and solar-cell efficiency by the surface plasmons.

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta 1-x Al x N y Films for Cu Diffusion Barrier Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Consiglio, S.; Dey, S.; Yu, K.

2016-01-01

Ultrathin TaN and Ta 1-xAl xN y films with x = 0.21 to 0.88 were deposited by atomic layer deposition (ALD) and evaluated for Cu diffusion barrier effectiveness compared to physical vapor deposition (PVD) grown TaN. Cu diffusion barrier effectiveness was investigated using in-situ ramp anneal synchrotron X-ray diffraction (XRD) on Cu/1.8 nm barrier/Si stacks. A Kissinger-like analysis was used to assess the kinetics of Cu 3Si formation and determine the effective activation energy (E a) for Cu silicidation. Compared to the stack with a PVD TaN barrier, the stacks with the ALD films exhibited a higher crystallization temperature (Tmore » c) for Cu silicidation. The Ea values of Cu 3Si formation for stacks with the ALD films were close to the reported value for grain boundary diffusion of Cu whereas the Ea of Cu 3Si formation for the stack with PVD TaN is closer to the reported value for lattice diffusion. For 3 nm films, grazing incidence in-plane XRD showed evidence of nanocrystallites in an amorphous matrix with broad peaks corresponding to high density cubic phase for the ALD grown films and lower density hexagonal phase for the PVD grown film further elucidating the difference in initial failure mechanisms due to differences in barrier crystallinity and associated phase.« less

Dependence of Interfacial Dzyaloshinskii-Moriya Interaction on Layer Thicknesses in Ta /Co -Fe -B /TaOx Heterostructures from Brillouin Light Scattering

NASA Astrophysics Data System (ADS)

Chaurasiya, Avinash Kumar; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

2018-01-01

The interfacial Dzyaloshinskii-Moriya interaction (IDMI) has recently drawn extensive research interest due to its fundamental role in stabilizing chiral spin textures in ultrathin ferromagnets, which are suitable candidates for future magnetic-memory devices. Here, we explore the ferromagnetic and heavy-metal layer-thickness dependence of IDMI in technologically important Ta /Co20Fe60B20/TaOx heterostructures by measuring nonreciprocity in spin-wave frequency using the Brillouin light-scattering technique. The observed value of the IDMI constant agrees with that obtained from a separate measurement of in-plane angular dependence of frequency nonreciprocity, which is also in good agreement with the theory predicted by Cortes-Ortuno and Landeros. Linear scaling behavior of IDMI with the inverse of Co-Fe-B thicknesses suggests that IDMI originates primarily from the interface in these heterostructures, whereas we observe a weak dependence of Ta thickness on the strength of IDMI. Importantly, the observed value of the IDMI constant is reasonably large by a factor of 3 compared to annealed Ta /Co -Fe -B /MgO heterostructures. We propose that the observation of large IDMI is likely due to the absence of boron diffusion towards the Ta /Co -Fe -B interface as the heterostructures are as deposited. Our detailed investigation opens up a route to designing thin-film heterostructures with the tailored IDMI constant for controlling Skyrmion-based magnetic-memory devices.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Cuevas, Andres

2015-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta2O5) underneath plasma enhanced chemical vapour deposited silicon nitride (SiNx). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta2O5 and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω.cm and n-type 1.0 Ω.cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm2 and 68 fA/cm2 are measured on 150 Ω/sq boron-diffused p+ and 120 Ω/sq phosphorus-diffused n+ c-Si, respectively. Capacitance-voltage measurements reveal a negative fixed insulator charge density of -1.8 × 1012 cm-2 for the Ta2O5 film and -1.0 × 1012 cm-2 for the Ta2O5/SiNx stack. The Ta2O5/SiNx stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

Effect of condensed tannin profile on wheat flour dough rheology

USDA-ARS?s Scientific Manuscript database

Proanthocyanidins (PA) crosslink proteins and could expand wheat gluten functionality. Effect PA MW profile (sorghum versus grape seed PA) on rheology of flours with different gluten composition (high versus low insoluble polymeric protein, IPP) was evaluated using mixograph, large (TA.XT2i) and sm...

Laser damage comparisons of broad-bandwidth, high-reflection optical coatings containing TiO 2, Nb 2O 5, or Ta 2O 5 high-index layers

DOE PAGES

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

2016-09-21

Broad bandwidth coatings allow angle of incidence flexibility and accommodate spectral shifts due to aging and water absorption. Higher refractive index materials in optical coatings, such as TiO 2, Nb 2O 5, and Ta 2O 5, can be used to achieve broader bandwidths compared to coatings that contain HfO 2 high index layers. We have identified the deposition settings that lead to the highest index, lowest absorption layers of TiO 2, Nb 2O 5, and Ta 2O 5, via e-beam evaporation using ion-assisted deposition. We paired these high index materials with SiO 2 as the low index material to createmore » broad bandwidth high reflection coatings centered at 1054 nm for 45 deg angle of incidence and P polarization. Furthermore, high reflection bandwidths as large as 231 nm were realized. Laser damage tests of these coatings using the ISO 11254 and NIF-MEL protocols are presented, which revealed that the Ta 2O 5/SiO 2 coating exhibits the highest resistance to laser damage, at the expense of lower bandwidth compared to the TiO 2/SiO 2 and Nb 2O 5/SiO 2 coatings.« less

Investigation of the nanodomain structure formation by piezoelectric force microscopy and Raman confocal microscopy in LiNbO3 and LiTaO3 crystals

NASA Astrophysics Data System (ADS)

Shur, V. Ya.; Zelenovskiy, P. S.; Nebogatikov, M. S.; Alikin, D. O.; Sarmanova, M. F.; Ievlev, A. V.; Mingaliev, E. A.; Kuznetsov, D. K.

2011-09-01

Piezoelectric force microscopy (PFM) and Raman confocal microscopy have been used for studying the nanodomain structures in congruent LiNbO3 and LiTaO3 crystals. The high-resolution nanodomain images at the surface were observed via PFM. Raman confocal microscopy has been used for the visualization of the nanodomain structures in the bulk via layer-by-layer scanning at various depths. It has been shown experimentally that the nanodomain images obtained at different depths correspond to domain images at the polar surface obtained at different moments: the deeper the nanodomain, the earlier the moment. Such a correlation was applied for the reconstruction of the evolution of the domain structures with charged domain walls. The studied domain structures were obtained in highly non-equilibrium switching conditions realized in LiNbO3 and LiTaO3 via pulse laser irradiation and the electric field poling of LiNbO3, with the surface layer modified by ion implantation. The revealed main stages of the domain structure evolution allow the authors to demonstrate that all geometrically different nanodomain structures observed in LiNbO3 and LiTaO3 appeared as a result of discrete switching.

Structure and mechanical properties of a two-layered material produced by the E-beam surfacing of Ta and Nb on the titanium base after multiple rolling

NASA Astrophysics Data System (ADS)

Bataev, V. A.; Golkovski, M. G.; Samoylenko, V. V.; Ruktuev, A. A.; Polyakov, I. A.; Kuksanov, N. K.

2018-04-01

The study has been conducted in line with the current approach to investigation of materials obtained by considerably deep surface alloying of the titanium substrate with Ta, Nb, and Zr. The thickness of the resulting alloyed layer was equal to 2 mm. The coating was formed through weld deposition of a powder with the use of a high-voltage electron beam in the air. It has been lately demonstrated that manufactured such a way alloyed layers possess corrosion resistance which is significantly higher than the resistance of titanium substrates. It has already been shown that such two-layered materials are weldable. The study objective is to investigate the feasibility of rolling for necking the sheets with the Ti-Ta-Nb anticorrosion coating with further fourfold decrease in their thickness. The research is also aimed at investigation of the material properties after rolling. Anticorrosion layers were formed both on CP-titanium and on VT14 (Ti-4Al-3Mo-1 V) durable titanium alloy. The results of chemical composition determination, structure examination, X-ray phase analysis and mechanical properties observations (including bending properties of the alloyed layers) are presented in the paper. The combination of welding, rolling, and bending enables the manufacture of corrosion-resistant vessels and process pipes which are made from the developed material and find technological application.

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Polytypism, polymorphism, and superconductivity in TaSe 2 –xTe x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Huixia; Xie, Weiwei; Tao, Jing

2015-03-03

Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO₂ are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivitymore » of TaSe₂, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe 2-xTe x solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. Thus, the reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of T c on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.« less

Xanthine oxidase functionalized Ta2O5 nanostructures as a novel scaffold for highly sensitive SPR based fiber optic xanthine sensor.

PubMed

Kant, Ravi; Tabassum, Rana; Gupta, Banshi D

2018-01-15

Fabrication and characterization of a surface plasmon resonance based fiber optic xanthine sensor using entrapment of xanthine oxidase (XO) enzyme in several nanostructures of tantalum (v) oxide (Ta 2 O 5 ) have been reported. Chemical route was adopted for synthesizing Ta 2 O 5 nanoparticles, nanorods, nanotubes and nanowires while Ta 2 O 5 nanofibers were prepared by electrospinning technique. The synthesized Ta 2 O 5 nanostructures were characterized by photoluminescence, scanning electron microscopy, UV-Visible spectra and X-ray diffraction pattern. The probes were fabricated by coating an unclad core of the fiber with silver layer followed by the deposition of XO entrapped Ta 2 O 5 nanostructures. The crux of sensing mechanism relies on the modification of dielectric function of sensing layer upon exposure to xanthine solution of diverse concentrations, reflected in terms of shift in resonance wavelength. The sensing probe coated with XO entrapped Ta 2 O 5 nanofibers has been turned out to possess maximum sensitivity amongst the synthesized nanostructures. The probe was optimized in terms of pH of the sample and the concentration of XO entrapped in Ta 2 O 5 nanofibers. The optimized sensing probe possesses a remarkably good sensitivity of 26.2nm/µM in addition to linear range from 0 to 3µM with an invincible LOD value of 0.0127µM together with a response time of 1min. Furthermore, probe selectivity with real sample analysis ensure the usage of the sensor for practical scenario. The results reported open a novel perspective towards a sensitive, rapid, reliable and selective detection of xanthine. Copyright © 2017 Elsevier B.V. All rights reserved.

Functional Analysis and Marker Development of TaCRT-D Gene in Common Wheat (Triticum aestivum L.).

PubMed

Wang, Jiping; Li, Runzhi; Mao, Xinguo; Jing, Ruilian

2017-01-01

Calreticulin (CRT), an endoplasmic reticulum (ER)-localized Ca 2+ -binding/buffering protein, is highly conserved and extensively expressed in animal and plant cells. To understand the function of CRTs in wheat ( Triticum aestivum L.), particularly their roles in stress tolerance, we cloned the full-length genomic sequence of the TaCRT-D isoform from D genome of common hexaploid wheat, and characterized its function by transgenic Arabidopsis system. TaCRT-D exhibited different expression patterns in wheat seedling under different abiotic stresses. Transgenic Arabidopsis plants overexpressing ORF of TaCRT-D displayed more tolerance to drought, cold, salt, mannitol, and other abiotic stresses at both seed germination and seedling stages, compared with the wild-type controls. Furthermore, DNA polymorphism analysis and gene mapping were employed to develop the functional markers of this gene for marker-assistant selection in wheat breeding program. One SNP, S440 (T→C) was detected at the TaCRT-D locus by genotyping a wheat recombinant inbred line (RIL) population (114 lines) developed from Opata 85 × W7984. The TaCRT-D was then fine mapped between markers Xgwm645 and Xgwm664 on chromosome 3DL, corresponding to genetic distances of 3.5 and 4.4 cM, respectively, using the RIL population and Chinese Spring nulli-tetrasomic lines. Finally, the genome-specific and allele-specific markers were developed for the TaCRT-D gene. These findings indicate that TaCRT-D function importantly in plant stress responses, providing a gene target for genetic engineering to increase plant stress tolerance and the functional markers of TaCRT-D for marker-assistant selection in wheat breeding.

Functional Analysis and Marker Development of TaCRT-D Gene in Common Wheat (Triticum aestivum L.)

PubMed Central

Wang, Jiping; Li, Runzhi; Mao, Xinguo; Jing, Ruilian

2017-01-01

Calreticulin (CRT), an endoplasmic reticulum (ER)-localized Ca2+-binding/buffering protein, is highly conserved and extensively expressed in animal and plant cells. To understand the function of CRTs in wheat (Triticum aestivum L.), particularly their roles in stress tolerance, we cloned the full-length genomic sequence of the TaCRT-D isoform from D genome of common hexaploid wheat, and characterized its function by transgenic Arabidopsis system. TaCRT-D exhibited different expression patterns in wheat seedling under different abiotic stresses. Transgenic Arabidopsis plants overexpressing ORF of TaCRT-D displayed more tolerance to drought, cold, salt, mannitol, and other abiotic stresses at both seed germination and seedling stages, compared with the wild-type controls. Furthermore, DNA polymorphism analysis and gene mapping were employed to develop the functional markers of this gene for marker-assistant selection in wheat breeding program. One SNP, S440 (T→C) was detected at the TaCRT-D locus by genotyping a wheat recombinant inbred line (RIL) population (114 lines) developed from Opata 85 × W7984. The TaCRT-D was then fine mapped between markers Xgwm645 and Xgwm664 on chromosome 3DL, corresponding to genetic distances of 3.5 and 4.4 cM, respectively, using the RIL population and Chinese Spring nulli-tetrasomic lines. Finally, the genome-specific and allele-specific markers were developed for the TaCRT-D gene. These findings indicate that TaCRT-D function importantly in plant stress responses, providing a gene target for genetic engineering to increase plant stress tolerance and the functional markers of TaCRT-D for marker-assistant selection in wheat breeding. PMID:28955354

Persistent Charge-Density-Wave Order in Single-Layer TaSe2.

PubMed

Ryu, Hyejin; Chen, Yi; Kim, Heejung; Tsai, Hsin-Zon; Tang, Shujie; Jiang, Juan; Liou, Franklin; Kahn, Salman; Jia, Caihong; Omrani, Arash A; Shim, Ji Hoon; Hussain, Zahid; Shen, Zhi-Xun; Kim, Kyoo; Min, Byung Il; Hwang, Choongyu; Crommie, Michael F; Mo, Sung-Kwan

2018-02-14

We present the electronic characterization of single-layer 1H-TaSe 2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.

Application of Glycerol for Induced Powdery Mildew Resistance in Triticum aestivum L.

PubMed

Li, Yinghui; Song, Na; Zhao, Chuanzhi; Li, Feng; Geng, Miaomiao; Wang, Yuhui; Liu, Wanhui; Xie, Chaojie; Sun, Qixin

2016-01-01

Previous work has demonstrated that glycerol-3-phosphate (G3P) and oleic acid (18:1) are two important signal molecules associated with plant resistance to fungi. In this article, we provide evidence that a 3% glycerol spray application 1-2 days before powdery mildew infection and subsequent applications once every 4 days was sufficient to stimulate the plant defense responses without causing any significant damage to wheat leaves. We found that G3P and oleic acid levels were markedly induced by powdery mildew infection. In addition, TaGLI1 (encoding a glycerol kinase) and TaSSI2 (encoding a stearoylacyl carrier protein fatty acid desaturase), two genes associated with the glycerol and fatty acid (FA) pathways, respectively, were induced by powdery mildew infection, and their promoter regions contain some fungal response elements. Moreover, exogenous application of glycerol increased the G3P level and decreased the level of oleic acid (18:1). Glycerol application induced the expression of pathogenesis-related ( PR ) genes ( TaPR-1, TaPR-2, TaPR-3, TaPR-4 , and TaPR-5 ), induced the generation of reactive oxygen species (ROS) before powdery mildew infection, and induced salicylic acid (SA) accumulation in wheat leaves. Further, we sprayed glycerol in a wheat field and found that it significantly ( p < 0.05) reduced the severity of powdery mildew disease and lessened disease-associated kernel weight loss, all without causing any noticeable degradation in wheat seed quality.

Application of Glycerol for Induced Powdery Mildew Resistance in Triticum aestivum L.

PubMed Central

Li, Yinghui; Song, Na; Zhao, Chuanzhi; Li, Feng; Geng, Miaomiao; Wang, Yuhui; Liu, Wanhui; Xie, Chaojie; Sun, Qixin

2016-01-01

Previous work has demonstrated that glycerol-3-phosphate (G3P) and oleic acid (18:1) are two important signal molecules associated with plant resistance to fungi. In this article, we provide evidence that a 3% glycerol spray application 1–2 days before powdery mildew infection and subsequent applications once every 4 days was sufficient to stimulate the plant defense responses without causing any significant damage to wheat leaves. We found that G3P and oleic acid levels were markedly induced by powdery mildew infection. In addition, TaGLI1 (encoding a glycerol kinase) and TaSSI2 (encoding a stearoylacyl carrier protein fatty acid desaturase), two genes associated with the glycerol and fatty acid (FA) pathways, respectively, were induced by powdery mildew infection, and their promoter regions contain some fungal response elements. Moreover, exogenous application of glycerol increased the G3P level and decreased the level of oleic acid (18:1). Glycerol application induced the expression of pathogenesis-related (PR) genes (TaPR-1, TaPR-2, TaPR-3, TaPR-4, and TaPR-5), induced the generation of reactive oxygen species (ROS) before powdery mildew infection, and induced salicylic acid (SA) accumulation in wheat leaves. Further, we sprayed glycerol in a wheat field and found that it significantly (p < 0.05) reduced the severity of powdery mildew disease and lessened disease-associated kernel weight loss, all without causing any noticeable degradation in wheat seed quality. PMID:27708588

Plasma treatment of Seeds: effect on growth, spores and bacterial charge

NASA Astrophysics Data System (ADS)

Ambrico, P. F.; Simek, M.; Morano, M.; Ambrico, M.; Minafra, A.; Prukner, V.; de Miccolis Angelini, R. M.; Trotti, P.

2016-09-01

We report on the effect of low temperature plasma treatment on tomato, basil and tobacco commercial seeds. Seeds were treated in filtered ambient air volume, surface and plasma jet DBD at atmospheric pressure Sterile agar substrate, supplemented with a nutrient and vitamin mixture, was used to allow seeds germination in sterilized sealed plastic containers. The seeds were stored in controlled environmental condition (T = 26C, cycle of 14hrs light/10hrs dark condition). Since all the procedure was performed under sterile conditions, only bacteria and fungi carried by seeds could grow. Plasma treatment significantly reduced the presence of bacterial contamination, while some fungi could resist at shortest exposures Seeds germination was then followed by time lapse photography in sterile water on 3MM Whatman paper in a closed container. The effect of plasma treatment was a faster germination time of seeds and emergence of cotyledons, able to start photosynthesis in seedlings.The plasma treated seeds were also sow in a soil/peat moss mixture. Plants were cultivated for about 40 days, showing that plasma induced a faster growth in length and weight with respect to untreated seeds.Furthermore the effect of plasma on seeds surface was studied by SEM imaging. We acknowledge `SELGE' (Puglia) and TACR (TA03010098).

Room temperature growth of ZnO nanorods by hydrothermal synthesis

NASA Astrophysics Data System (ADS)

Tateyama, Hiroki; Zhang, Qiyan; Ichikawa, Yo

2018-05-01

The effect of seed layer morphology on ZnO nanorod growth at room temperature was studied via hydrothermal synthesis on seed layers with different thicknesses and further annealed at different temperatures. The change in the thickness and annealing temperature enabled us to control over a diameter of ZnO nanorods which are attributed to the changing of crystallinity and roughness of the seed layers.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

A β-Ta system for current induced magnetic switching in the absence of external magnetic field

NASA Astrophysics Data System (ADS)

Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

2018-05-01

Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, Murat; Boulle, Olivier; Drouard, Marc

2014-01-27

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memorymore » cell.« less

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.

2011-01-01

AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film. Transistors fabricated with 150 nm length gates showed drain current density of 1.37 A/mm, transconductance of 315 mS/mm, and sustained drain-source biases up to 96 V while in the off-state before destructive breakdown as a result of the Ta2O5 gate insulator. Terman's method has been modified for the multijunction capacitor and allowed the measurement of interface state density (˜1013 cm-2 eV-1). Small-signal frequency performance of 75 and 115 GHz was obtained for ft and fmax, respectively.

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sønsteby, Henrik Hovde, E-mail: henrik.sonsteby@kjemi.iuio.no; Nilsen, Ola; Fjellvåg, Helmer

2016-07-15

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer depositionmore » with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.« less

Interface or bulk scattering in the semiclassical theory for spin valves

NASA Astrophysics Data System (ADS)

Wang, L.; McMahon, W. J.; Liu, B.; Wu, Y. H.; Chong, C. T.

2004-06-01

By taking into account spin asymmetries of the interface transmissions and the bulk mean free paths, we have treated pure interface, non-pure interface, bulk, and interface plus bulk scattering within the semiclassical Boltzmann theory. First, the optimizations of NOL (nano-oxide-layers) insertions in bottom, synthetic, and dual spin valves and the variations of the giant magnetoresistance (GMR) with the thickness of the free layer have been examined. For non-pure interface, bulk, and interface plus bulk scattering, qualitative trends of GMR versus NOL positions in spin valves are similar to each other. For pure interface scattering, there is no optimized NOL insertion positions and the blocking effect of the NOL inserted in the spacer remains effective as other three kinds of scattering. The GMR ratio for bulk scattering simply approaches zero when the free layer thickness becomes short; in contrast, for interface scattering or interface plus bulk scattering, the GMR ratio is nonzero at zero thickness of the free layer. Second, the relationships between GMR and specular and diffusive scattering have been explored. As far as specular reflection is concerned, our results imply that for a realistic bottom spin filter spin valve, Ta/NiFe/IrMn/CoFe/Cu/CoFe/Cu/Ta, roughness of the surfaces of Ta and the interfaces of Ta/NiFe, NiFe/IrMn, pinned layer/spacer, and spacer/free layer may lead to large GMR. We also find that the enhancement of GMR due to surface specular reflection is only a pure interface effect. The dependences of GMR on the specular transmissions roughly follow square relations. The trends of GMR against the spin-down diffusive scattering depend on the values of the spin-up transmission. Finally, impurity scattering was investigated and our semiclassical results are in qualitative agreement with the experiments and the quantum theory.

Electronic transitions of tantalum monofluoride

NASA Astrophysics Data System (ADS)

Ng, K. F.; Zou, Wenli; Liu, Wenjian; Cheung, A. S.-C.

2017-03-01

The electronic transition spectrum of the tantalum monofluoride (TaF) molecule in the spectral region between 448 and 560 nm has been studied using the technique of laser-ablation/reaction free jet expansion and laser induced fluorescence spectroscopy. The TaF molecule was produced by reacting laser-ablated tantalum atoms with sulfur hexafluoride gas seeded in argon. Twenty-two vibrational bands with resolved rotational structure have been recorded and analyzed, which were organized into seven electronic transitions. The X3Σ-(0+) state has been identified to be the ground state and the determined equilibrium bond length, re, and vibrational frequency, ωe, are 1.8184 Å and 700.1 cm-1, respectively. The low-lying Λ-S states and Ω sub-states of TaF were also theoretically studied at the MRCISD+Q level of theory with spin-orbit coupling. The Ω = 0+ and 2 sub-states from the -3Σ and 3Φ state have been found to be the ground and the first excited states, respectively, which agrees well with our experimental determinations. This work represents the first experimental investigation of the molecular structure of the TaF molecule.

The role of seed bank in the dynamics of understorey in an oak forest in Hungary.

PubMed

Koncz, G; Papp, Mária; Török, P; Kotroczó, Zs; Krakomperger, Zs; Matus, G; Tóthmérész, B

2010-01-01

We studied the potential role of seed bank in the dynamics of the understorey in a turkey oak-sessile oak forest (Querceteum petraeae-cerris) in Hungary. We used long-term records of the herb layer (1973-2006) and the seed bank composition of 2006 to assess the role of seed bank in the regeneration of herb layer. The total cover of herb layer decreased from 22% (1973) to 6% (1988), and remained low (<10%) till 2006; coinciding with the increasing cover of secondary canopy dominated by Acer campestre. We found a low density seed bank (ca. 1300 seeds/m2). Altogether 33 species were germinated from the soil samples. A few generalist weed species composed the majority of seed bank. It was possible to assign a seed bank type for 19 species; 14 species out of 19 was long-term persistent. We found that the characteristic perennial forest herbs and grasses had only sparse seed bank. The Jaccard similarity between vegetation and seed bank was low (<30%). Our results suggest that the continuous establishment of forest herbs are not based on local persistent seed bank; it should be based on vegetative spreading and/or seed rain.

An Endosperm-Associated Cuticle Is Required for Arabidopsis Seed Viability, Dormancy and Early Control of Germination

PubMed Central

Loubery, Sylvain; Utz-Pugin, Anne; Bailly, Christophe; Mène-Saffrané, Laurent; Lopez-Molina, Luis

2015-01-01

Cuticular layers and seeds are prominent plant adaptations to terrestrial life that appeared early and late during plant evolution, respectively. The cuticle is a waterproof film covering plant aerial organs preventing excessive water loss and protecting against biotic and abiotic stresses. Cutin, consisting of crosslinked fatty acid monomers, is the most abundant and studied cuticular component. Seeds are dry, metabolically inert structures promoting plant dispersal by keeping the plant embryo in an arrested protected state. In Arabidopsis thaliana seeds, the embryo is surrounded by a single cell endosperm layer itself surrounded by a seed coat layer, the testa. Whole genome analyses lead us to identify cutin biosynthesis genes as regulatory targets of the phytohormones gibberellins (GA) and abscisic acid (ABA) signaling pathways that control seed germination. Cutin-containing layers are present in seed coats of numerous species, including Arabidopsis, where they regulate permeability to outer compounds. However, the role of cutin in mature seed physiology and germination remains poorly understood. Here we identify in mature seeds a thick cuticular film covering the entire outer surface of the endosperm. This seed cuticle is defective in cutin-deficient bodyguard1 seeds, which is associated with alterations in endospermic permeability. Furthermore, mutants affected in cutin biosynthesis display low seed dormancy and viability levels, which correlates with higher levels of seed lipid oxidative stress. Upon seed imbibition cutin biosynthesis genes are essential to prevent endosperm cellular expansion and testa rupture in response to low GA synthesis. Taken together, our findings suggest that in the course of land plant evolution cuticular structures were co-opted to achieve key physiological seed properties. PMID:26681322

An Endosperm-Associated Cuticle Is Required for Arabidopsis Seed Viability, Dormancy and Early Control of Germination.

PubMed

De Giorgi, Julien; Piskurewicz, Urszula; Loubery, Sylvain; Utz-Pugin, Anne; Bailly, Christophe; Mène-Saffrané, Laurent; Lopez-Molina, Luis

2015-12-01

Cuticular layers and seeds are prominent plant adaptations to terrestrial life that appeared early and late during plant evolution, respectively. The cuticle is a waterproof film covering plant aerial organs preventing excessive water loss and protecting against biotic and abiotic stresses. Cutin, consisting of crosslinked fatty acid monomers, is the most abundant and studied cuticular component. Seeds are dry, metabolically inert structures promoting plant dispersal by keeping the plant embryo in an arrested protected state. In Arabidopsis thaliana seeds, the embryo is surrounded by a single cell endosperm layer itself surrounded by a seed coat layer, the testa. Whole genome analyses lead us to identify cutin biosynthesis genes as regulatory targets of the phytohormones gibberellins (GA) and abscisic acid (ABA) signaling pathways that control seed germination. Cutin-containing layers are present in seed coats of numerous species, including Arabidopsis, where they regulate permeability to outer compounds. However, the role of cutin in mature seed physiology and germination remains poorly understood. Here we identify in mature seeds a thick cuticular film covering the entire outer surface of the endosperm. This seed cuticle is defective in cutin-deficient bodyguard1 seeds, which is associated with alterations in endospermic permeability. Furthermore, mutants affected in cutin biosynthesis display low seed dormancy and viability levels, which correlates with higher levels of seed lipid oxidative stress. Upon seed imbibition cutin biosynthesis genes are essential to prevent endosperm cellular expansion and testa rupture in response to low GA synthesis. Taken together, our findings suggest that in the course of land plant evolution cuticular structures were co-opted to achieve key physiological seed properties.

Interaction Studies of Ceramic Vacuum Plasma Spraying for the Melting Crucible Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jong Hwan Kim; Hyung Tae Kim; Yoon Myung Woo

2013-10-01

Candidate coating materials for re-usable metallic nuclear fuel crucibles, TaC, TiC, ZrC, ZrO2, and Y2O3, were plasmasprayed onto a niobium substrate. The microstructure of the plasma-sprayed coatings and thermal cycling behavior were characterized, and U-Zr melt interaction studies were carried out. The TaC and Y2O3 coating layers had a uniform thickness, and high density with only a few small closed pores showing good consolidation, while the ZrC, TiC, and ZrO2 coatings were not well consolidated with a considerable amount of porosity. Thermal cycling tests showed that the adhesion of the TiC, ZrC, and ZrO2 coating layers with niobium was relativelymore » weak compared to the TaC and Y2O3 coatings. The TaC and Y2O3 coatings had better cycling characteristics with no interconnected cracks. In the interaction studies, ZrC and ZrO2 coated rods showed significant degradations after exposure to U-10 wt.% Zr melt at 1600 degrees C for 15 min., but TaC, TiC, and Y2O3 coatings showed good compatibility with U-Zr melt.« less

A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

NASA Astrophysics Data System (ADS)

Gassilloud, R.; Maunoury, C.; Leroux, C.; Piallat, F.; Saidi, B.; Martin, F.; Maitrejean, S.

2014-04-01

We studied Ta, TaN, and sub-stoichiometric TaNx electrodes (obtained by nitrogen redistribution in Ta/TaN or Ti/TaN bilayers) deposited on thermal SiO2 and HfO2/IL (0.8 nm SiO2 IL, i.e., interlayer) stacks. Effective work-functions (WF) were extracted on MOS capacitor structures on SiO2 bevelled insulator of 4.2 eV for pure Ta, 4.6 eV for TaN, and 4.3 eV for sub-stoichiometric TaNx. This intermediate WF value is explained by TaN nitrogen redistribution with reactive Ta or Ti elements shifting the gate work-function toward the Si conduction band. The same electrodes deposited on an HfO2/IL dielectric showed different behavior: First, the Ta/HfO2/IL stack shows a +200 meV WF increase (towards the Si valence band) compared to the SiO2 dielectric stack. This increase is explained by the well-known HfO2/IL dipole formation. Second, in contrast to electrodes deposited on SiO2, sub-stoichiometric TaNx/HfO2 is found to have a lower WF (4.3 eV), than pure Ta on HfO2 (4.4 eV). This inversion in work-function behavior measured on SiO2 vs. HfO2 is explained by the nitrogen redistribution in Ta/TaN bilayer together with diffusion of nitrogen through the HfO2 layer, leading to Si-N formation which prevents dipole formation at the HfO2/IL interface.

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Mustafa; Department of Physics, University of Çukurova, Adana 01330; Yu, Guoqiang

2015-04-20

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeBmore » layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting  H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.« less

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

NASA Astrophysics Data System (ADS)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M.; Hassan, Z.

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM),more » and UV-Vis spectrophotometer.« less

The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves

NASA Astrophysics Data System (ADS)

Qiu, J. J.; Han, G. C.; Li, K. B.; Liu, Z. Y.; Zong, B. Y.; Wu, Y. H.

2006-05-01

The magnetostriction coefficient (λs) of ultrathin sputtered polycrystalline as-deposited and annealed Ta/Ni81Fe19(t)/Ta films was studied as a function of the thickness. λs and magnetoresistance (MR) of bottom-type spin valves (SVs) with nano-oxide layer (NOL) added in the pinned layer were investigated by using NiFe, Co90Fe10, and CoFe/NiFe/CoFe layers as free layer (FL), respectively. λs of SV with NOL increased slightly except that of CoFe FL. NOLs were added at different positions to study the effects of NOL on λs of CoFe FL. All λs of CoFe FL change from negative to positive and its absolute value also increases significantly with CoFeOx related NOL added below. Our λs and surface roughness results indicated that the structure of the film not the roughness dominates λs of ultrathin FL in SVs.

Remediation of arsenic-contaminated groundwater using media-injected permeable reactive barriers with a modified montmorillonite: sand tank studies.

PubMed

Luo, Ximing; Liu, Haifei; Huang, Guoxin; Li, Ye; Zhao, Yan; Li, Xu

2016-01-01

A modified montmorillonite (MMT) was prepared using an acid activation-sodium activation-iron oxide coating method to improve the adsorption capacities of natural MMTs. For MMT, its interlamellar distance increased from 12.29 to 13.36 Å, and goethite (α-FeOOH) was intercalated into its clay layers. Two novel media-injected permeable reactive barrier (MI-PRB) configurations were proposed for removing arsenic from groundwater. Sand tank experiments were conducted to investigate the performance of the two MI-PRBs: Tank A was filled with quartz sand. Tank B was packed with quartz sand and zero-valent iron (ZVI) in series, and the MMT slurry was respectively injected into them to form reactive zones. The results showed that for tank A, total arsenic (TA) removal of 98.57% was attained within the first 60 mm and subsequently descended slowly to 88.84% at the outlet. For tank B, a similar spatial variation trend was observed in the quartz sand layer, and subsequently, TA removal increased to ≥99.80% in the ZVI layer. TA removal by MMT mainly depended on both surface adsorption and electrostatic adhesion. TA removal by ZVI mainly relied on coagulation/precipitation and adsorption during the iron corrosion. The two MI-PRBs are feasible alternatives for in situ remediation of groundwater with elevated As levels.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Formulation for Oral Delivery of Lactoferrin Based on Bovine Serum Albumin and Tannic Acid Multilayer Microcapsules

NASA Astrophysics Data System (ADS)

Kilic, Ece; Novoselova, Marina V.; Lim, Su Hui; Pyataev, Nikolay A.; Pinyaev, Sergey I.; Kulikov, Oleg A.; Sindeeva, Olga A.; Mayorova, Oksana A.; Murney, Regan; Antipina, Maria N.; Haigh, Brendan; Sukhorukov, Gleb B.; Kiryukhin, Maxim V.

2017-03-01

Lactoferrin (Lf) has considerable potential as a functional ingredient in food, cosmetic and pharmaceutical applications. However, the bioavailability of Lf is limited as it is susceptible to digestive enzymes in gastrointestinal tract. The shells comprising alternate layers of bovine serum albumin (BSA) and tannic acid (TA) were tested as Lf encapsulation system for oral administration. Lf absorption by freshly prepared porous 3 μm CaCO3 particles followed by Layer-by-Layer assembly of the BSA-TA shells and dissolution of the CaCO3 cores was suggested as the most efficient and harmless Lf loading method. The microcapsules showed high stability in gastric conditions and effectively protected encapsulated proteins from digestion. Protective efficiency was found to be 76 ± 6% and 85 ± 2%, for (BSA-TA)4 and (BSA-TA)8 shells, respectively. The transit of Lf along the gastrointestinal tract (GIT) of mice was followed in vivo and ex vivo using NIR luminescence. We have demonstrated that microcapsules released Lf in small intestine allowing 6.5 times higher concentration than in control group dosed with the same amount of free Lf. Significant amounts of Lf released from microcapsules were then absorbed into bloodstream and accumulated in liver. Suggested encapsulation system has a great potential for functional foods providing lactoferrin.

Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO{sub 2} seed layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asib, N. A. M., E-mail: amierahasib@yahoo.com; Afaah, A. N.; Aadila, A.

Titanium dioxide (TiO{sub 2}) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO{sub 2} seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO{sub 2} seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO{sub 2} seed layer of 0.100 M. PL spectramore » of the TiO{sub 2}: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO{sub 2} seed layer.« less

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

2013-07-01

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

In-Line Monitoring of Fab Processing Using X-Ray Diffraction

NASA Astrophysics Data System (ADS)

Gittleman, Bruce; Kozaczek, Kris

2005-09-01

As the materials shift that started with Cu continues to advance in the semiconductor industry, new issues related to materials microstructure have arisen. While x-ray diffraction (XRD) has long been used in development applications, in this paper we show that results generated in real time by a unique, high throughput, fully automated XRD metrology tool can be used to develop metrics for qualification and monitoring of critical processes in current and future manufacturing. It will be shown that these metrics provide a unique set of data that correlate to manufacturing issues. For example, ionized-sputtering is the current deposition method of choice for both the Cu seed and TaNx/Ta barrier layers. The alpha phase of Ta is widely used in production for the upper layer of the barrier stack, but complete elimination of the beta phase requires a TaNx layer with sufficient N content, but not so much as to start poisoning the target and generating particle issues. This is a well documented issue, but traditional monitoring by sheet resistance methods cannot guarantee the absence of the beta phase, whereas XRD can determine the presence of even small amounts of beta. Nickel silicide for gate metallization is another example where monitoring of phase is critical. As well being able to qualify an anneal process that gives only the desired NiSi phase everywhere across the wafer, XRD can be used to determine if full silicidation of the Ni has occurred and characterize the crystallographic microstructure of the Ni to determine any effect of that microstructure on the anneal process. The post-anneal nickel silicide phase and uniformity of the silicide microstructure can all be monitored in production. Other examples of the application of XRD to process qualification and production monitoring are derived from the dependence of certain processes, some types of defect generation, and device performance on crystallographic texture. The data presented will show that CMP dishing problems could be traced to texture of the barrier layer and mitigated by adjusting the barrier process. The density of pits developed during CMP of electrochemically deposited (ECD) Cu depends on the fraction of (111) oriented grains. It must be emphasized that the crystallographic texture is not only a key parameter for qualification of high yielding and reliable processes, but also serves as a critical parameter for monitoring tool health. The texture of Cu and W are sensitive not only to deviations in performance of the tool depositing or annealing a particular film, but also highly sensitive to the texture of the barrier underlayers and thus any performance deviations in those tools. The XRD metrology tool has been designed with production monitoring in mind and has been fully integrated into both 200 mm and 300 mm fabs. Rapid analysis is achieved by using a high intensity fixed x-ray source, coupled with a large area 2D detector. The output metrics from one point are generated while the tool is measuring a subsequent point, giving true on-the-fly analysis; no post-processing of data is necessary. Spatial resolution on the wafer surface ranging from 35 μm to 1 mm is available, making the tool suitable for monitoring of product wafers. Typical analysis times range from 10 seconds to 2 minutes per point, depending on the film thickness and spot size. Current metrics used for process qualification and production monitoring are phase, FWHM of the primary phase peaks (for mean grain size tracking), and crystallographic texture.

Mechanical behavior of Ti-Ta-based surface alloy fabricated on TiNi SMA by pulsed electron-beam melting of film/substrate system

NASA Astrophysics Data System (ADS)

Meisner, S. N.; Yakovlev, E. V.; Semin, V. O.; Meisner, L. L.; Rotshtein, V. P.; Neiman, A. A.; D'yachenko, F.

2018-04-01

The physical-mechanical properties of the Ti-Ta based surface alloy with thickness up to ∼2 μm fabricated through the multiple (up to 20 cycles) alternation of magnetron deposition of Ti70Ta30 (at.%) thin (50 nm) films and their liquid-phase mixing with the NiTi substrate by microsecond low-energy, high current pulsed electron beam (LEHCPEB: ≤15 keV, ∼2 J/cm2) are presented. Two types of NiTi substrates (differing in the methods of melting alloys) were pretreated with LEHCPEB to improve the adhesion of thin-film coating and to protect it from local delimitation because of the surface cratering under pulsed melting. The methods used in the research include nanoindentation, transmission electron microscopy, and depth profile analysis of nanohardness, Vickers hardness, elastic modulus, depth recovery ratio, and plasticity characteristic as a function of indentation depth. For comparison, similar measurements were carried out with NiTi substrates in the initial state and after LEHCPEB pretreatment, as well as on "Ti70Ta30(1 μm) coating/NiTi substrate" system. It was shown that the upper surface layer in both NiTi substrates is the same in properties after LEHCPEB pretreatment. Our data suggest that the type of multilayer surface structure correlates with its physical-mechanical properties. For NiTi with the Ti-Ta based surface alloy ∼1 μm thick, the highest elasticity falls on the upper submicrocrystalline layer measuring ∼0.2 μm and consisting of two Ti-Ta based phases: α‧‧ martensite (a = 0.475 nm, b = 0.323 nm, c = 0.464 nm) and β austenite (a = 0.327 nm). Beneath the upper layer there is an amorphous sublayer followed by underlayers with coarse (>20 nm) and fine (<20 nm) average grain sizes which provide a gradual transition of the mechanical parameters to the values of the NiTi substrate.

Pomegranate: the grainy apple

USDA-ARS?s Scientific Manuscript database

‘Parfianka’ (Garnet Sash) has dark red, large to very large fruit and arils with soft seeds. The taste is sweet with balanced acidity offering interest to the flavor (Kennedy, 2010). It tested with 15.2 °Brix and a TA of 1.04 (Table 2), attesting for the sugar-acid balance. It was selected in Turkme...

FAR5, a fatty acyl-coenzyme A reductase, is involved in primary alcohol biosynthesis of the leaf blade cuticular wax in wheat (Triticum aestivum L.)

PubMed Central

Wang, Yong; Wang, Meiling; Sun, Yulin; Wang, Yanting; Li, Tingting; Chai, Guaiqiang; Jiang, Wenhui; Shan, Liwei; Li, Chunlian; Xiao, Enshi; Wang, Zhonghua

2015-01-01

A waxy cuticle that serves as a protective barrier against non-stomatal water loss and environmental damage coats the aerial surfaces of land plants. It comprises a cutin polymer matrix and waxes. Cuticular waxes are complex mixtures of very long chain fatty acids (VLCFAs) and their derivatives. Results show that primary alcohols are the major components of bread wheat (Triticum aestivum L.) leaf blade cuticular waxes. Here, the characterization of TaFAR5 from wheat cv Xinong 2718, which is allelic to TAA1b, an anther-specific gene, is reported. Evidence is presented for a new function for TaFAR5 in the biosynthesis of primary alcohols of leaf blade cuticular wax in wheat. Expression of TaFAR5 cDNA in yeast (Saccharomyces cerevisiae) led to production of C22:0 primary alcohol. The transgenic expression of TaFAR5 in tomato (Solanum lycopersicum) cv MicroTom leaves resulted in the accumulation of C26:0, C28:0, and C30:0 primary alcohols. TaFAR5 encodes an alcohol-forming fatty acyl-coenzyme A reductase (FAR). Expression analysis revealed that TaFAR5 was expressed at high levels in the leaf blades, anthers, pistils, and seeds. Fully functional green fluorescent protein-tagged TaFAR5 protein was localized to the endoplasmic reticulum (ER), the site of primary alcohol biosynthesis. SDS–PAGE analysis indicated that the TaFAR5 protein possessed a molecular mass of 58.4kDa, and it was also shown that TaFAR5 transcript levels were regulated in response to drought, cold, and abscisic acid (ABA). Overall, these data suggest that TaFAR5 plays an important role in the synthesis of primary alcohols in wheat leaf blade. PMID:25468933

FAR5, a fatty acyl-coenzyme A reductase, is involved in primary alcohol biosynthesis of the leaf blade cuticular wax in wheat (Triticum aestivum L.).

PubMed

Wang, Yong; Wang, Meiling; Sun, Yulin; Wang, Yanting; Li, Tingting; Chai, Guaiqiang; Jiang, Wenhui; Shan, Liwei; Li, Chunlian; Xiao, Enshi; Wang, Zhonghua

2015-03-01

A waxy cuticle that serves as a protective barrier against non-stomatal water loss and environmental damage coats the aerial surfaces of land plants. It comprises a cutin polymer matrix and waxes. Cuticular waxes are complex mixtures of very long chain fatty acids (VLCFAs) and their derivatives. Results show that primary alcohols are the major components of bread wheat (Triticum aestivum L.) leaf blade cuticular waxes. Here, the characterization of TaFAR5 from wheat cv Xinong 2718, which is allelic to TAA1b, an anther-specific gene, is reported. Evidence is presented for a new function for TaFAR5 in the biosynthesis of primary alcohols of leaf blade cuticular wax in wheat. Expression of TaFAR5 cDNA in yeast (Saccharomyces cerevisiae) led to production of C22:0 primary alcohol. The transgenic expression of TaFAR5 in tomato (Solanum lycopersicum) cv MicroTom leaves resulted in the accumulation of C26:0, C28:0, and C30:0 primary alcohols. TaFAR5 encodes an alcohol-forming fatty acyl-coenzyme A reductase (FAR). Expression analysis revealed that TaFAR5 was expressed at high levels in the leaf blades, anthers, pistils, and seeds. Fully functional green fluorescent protein-tagged TaFAR5 protein was localized to the endoplasmic reticulum (ER), the site of primary alcohol biosynthesis. SDS-PAGE analysis indicated that the TaFAR5 protein possessed a molecular mass of 58.4kDa, and it was also shown that TaFAR5 transcript levels were regulated in response to drought, cold, and abscisic acid (ABA). Overall, these data suggest that TaFAR5 plays an important role in the synthesis of primary alcohols in wheat leaf blade. © The Author 2014. Published by Oxford University Press on behalf of the Society for Experimental Biology. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

NASA Astrophysics Data System (ADS)

Trindade, I. G.; Leitão, D.; Fermento, R.; Pogorelev, Y.; Sousa, J. B.

2009-08-01

In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co 85Fe 15 and Ni 81Fe 19 thin layers grown on identical underlayers of Ta70 Å/Ru13 Å. The largest difference was observed in Ni 81Fe 19 films grown on underlayers of amorphous Ta70 Å. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.

The gradient structure of the NiTi surface layers subjected to tantalum ion beam alloying

NASA Astrophysics Data System (ADS)

Girsova, S. L.; Poletika, T. M.; Meisner, L. L.; Schmidt, E. Yu

2017-05-01

The NiTi shape memory alloy has been modified by ion implantation with Ta to improve the surface and biological properties. The elemental and phase composition and structure of the surface and near-surface layers of NiTi specimens after the Ta ion implantation with the fluency D = 3 × 1017 cm-2 and D = 6 × 1017 cm-2 are examined. The methods of Auger electron spectroscopy (AES), transmission electron microscopy (TEM), and electron dispersion analysis (EDS) are used. It is found that a nonuniform distribution of elements along the depth of the surface layer after the ion implantation of NiTi specimens, regardless of the regime, is accompanied by the formation of a number of sublayer structures.

TEF-7A, a transcript elongation factor gene, influences yield-related traits in bread wheat (Triticum aestivum L.)

PubMed Central

Zheng, Jun; Liu, Hong; Wang, Yuquan; Wang, Lanfen; Chang, Xiaoping; Jing, Ruilian; Hao, Chenyang; Zhang, Xueyong

2014-01-01

In this study, TaTEF-7A, a member of the transcript elongation factor gene family, and its flanking sequences were isolated. TaTEF-7A was located on chromosome 7A and was flanked by markers Xwmc83 and XP3156.3. Subcellular localization revealed that TaTEF-7A protein was localized in the nucleus. This gene was expressed in all organs, but the highest expression occurred in young spikes and developing seeds. Overexpression of TaTEF-7A in Arabidopsis thaliana produced pleiotropic effects on vegetative and reproductive development that enhanced grain length, silique number, and silique length. No diversity was found in the coding region of TaTEF-7A, but 16 single nucleotide polymorphisms and Indels were detected in the promoter regions of different cultivars. Markers based on sequence variations in the promoter regions (InDel-629 and InDel-604) were developed, and three haplotypes were identified based on those markers. Haplotype–trait association analysis of the Chinese wheat mini core collection revealed that TaTEF-7A was significantly associated with grain number per spike. Phenotyping of near-isogenic lines (NILs) confirmed that TaTEF-7A increases potential grain yield and yield-related traits. Frequency changes in favoured haplotypes gradually increased in cultivars released in China from the 1940s. Geographic distributions of favoured haplotypes were characterized in six major wheat production regions worldwide. The presence of Hap-7A-3, the favoured haplotype, showed a positive correlation with yield in a global set of breeding lines. These results suggest that TaTEF-7A is a functional regulatory factor for grain number per spike and provide a basis for marker-assisted selection. PMID:25056774

Trichite growth during oxidation of titanium and TA6V4 alloy by water vapor at high temperatures

NASA Technical Reports Server (NTRS)

Coddet, C.; Motte, F.; Sarrazin, P.

1982-01-01

Analysis by electron scanning microscope detected the formation of rutile trichites on the surface of specimens of titanium and titanium alloy TA6V4 oxidized in water vapor in the temperature range 650 to 950 C and the water vapor pressure range from 0.5 to 18 torr. In all specimens, two sublayers of rutile were formed: an external layer of basalt-like appearance, and a microcrystalline inner layer. Morphology of the trichites depends on temperature and the material (whether metal or alloy), but not on vapor pressure.

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM

NASA Astrophysics Data System (ADS)

Sharath, S. U.; Joseph, M. J.; Vogel, S.; Hildebrandt, E.; Komissinskiy, P.; Kurian, J.; Schroeder, T.; Alff, L.

2016-10-01

We have investigated the material and electrical properties of tantalum oxide thin films (TaOx) with engineered oxygen contents grown by RF-plasma assisted molecular beam epitaxy. The optical bandgap and the density of the TaOx films change consistently with oxygen contents in the range of 3.63 to 4.66 eV and 12.4 to 9.0 g/cm3, respectively. When exposed to atmosphere, an oxidized Ta2O5-y surface layer forms with a maximal thickness of 1.2 nm depending on the initial oxygen deficiency of the film. X-ray photoelectron spectroscopy studies show that multiple sub-stoichiometric compositions occur in oxygen deficient TaOx thin films, where all valence states of Ta including metallic Ta are possible. Devices of the form Pt/Ta2O5-y/TaOx/TiN exhibit highly tunable forming voltages of 10.5 V to 1.5 V with decreasing oxygen contents in TaOx. While a stable bipolar resistive switching (BRS) occurs in all devices irrespective of oxygen content, unipolar switching was found to coexist with BRS only at higher oxygen contents, which transforms to a threshold switching behaviour in the devices grown under highest oxidation.

AIRBORNE BACTERIA IN THE ATMOSPHERIC SURFACE LAYER: TEMPORAL DISTRIBUTION ABOVE A GRASS SEED FIELD

EPA Science Inventory

Temporal airborne bacterial concentrations and meteorological conditions were measured above a grass seed field in the Willamette River Valley, near Corvallis, Oregon, in the summer of 1993. he report describes the changes in the atmospheric surface layer over a grass seed field ...

Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure

NASA Astrophysics Data System (ADS)

Ma, Q. L.; Iihama, S.; Kubota, T.; Zhang, X. M.; Mizukami, S.; Ando, Y.; Miyazaki, T.

2012-09-01

The effects of Mg metallic interlayer on the magnetic properties of thin CoFeB films in MgO/Mg (tMg)/CoFeB (1.2 nm)/Ta structures were studied in this letter. Our experimental result shows that the CoFeB film exhibits perpendicular magnetic anisotropy (PMA) when the CoFeB and MgO layers are separated by a metallic Mg layer with a maximum thickness of 0.8 nm. The origin of PMA was discussed by considering the preferential transmission of the Δ1 symmetry preserved by the Mg interlayer in crystallized MgO/Mg/CoFeB/Ta. In addition, the thin Mg interlayer also contributes to enhancing the thermal stability and reducing the effective damping constant and coercivity of the CoFeB film.

Effects of shot-peening and atmospheric-pressure plasma on aesthetic improvement of Ti-Nb-Ta-Zr alloy for dental applications

NASA Astrophysics Data System (ADS)

Miura-Fujiwara, Eri; Suzuki, Yuu; Ito, Michiko; Yamada, Motoko; Matsutake, Sinpei; Takashima, Seigo; Sato, Hisashi; Watanabe, Yoshimi

2018-01-01

Ti and Ti alloys are widely used for biomedical applications such as artificial joints and dental devices because of their good mechanical properties and biochemical compatibility. However, dental devices made of Ti and Ti alloys do not have the same color as teeth, so they are inferior to ceramics and polymers in terms of aesthetic properties. In a previous study, Ti-29Nb-13Ta-4.6Zr was coated with a white Ti oxide layer by heat treatment to improve its aesthetic properties. Shot-peening is a severe plastic deformation process and can introduce a large shear strain on the peened surface. In this study, the effects of shot-peening and atmospheric-pressure plasma on Ti-29Nb-13Ta-4.6Zr were investigated to form a white layer on the surface for dental applications.

Tomato Seed Coat Permeability to Selected Carbon Nanomaterials and Enhancement of Germination and Seedling Growth

PubMed Central

Ratnikova, Tatsiana A.; Rao, Apparao M.; Taylor, Alan G.

2015-01-01

Seed coat permeability was examined using a model that tested the effects of soaking tomato (Solanum lycopersicon) seeds in combination with carbon-based nanomaterials (CBNMs) and ultrasonic irradiation (US). Penetration of seed coats to the embryo by CBNMs, as well as CBNMs effects on seed germination and seedling growth, was examined. Two CBNMs, C60(OH)20 (fullerol) and multiwalled nanotubes (MWNTs), were applied at 50 mg/L, and treatment exposure ranged from 0 to 60 minutes. Bright field, fluorescence, and electron microscopy and micro-Raman spectroscopy provided corroborating evidence that neither CBNM was able to penetrate the seed coat. The restriction of nanomaterial (NM) uptake was attributed to the semipermeable layer located at the innermost layer of the seed coat adjacent to the endosperm. Seed treatments using US at 30 or 60 minutes in the presence of MWNTs physically disrupted the seed coat; however, the integrity of the semipermeable layer was not impaired. The germination percentage and seedling length and weight were enhanced in the presence of MWNTs but were not altered by C60(OH)20. The combined exposure of seeds to NMs and US provided insight into the nanoparticle-seed interaction and may serve as a delivery system for enhancing seed germination and early seedling growth. PMID:26495423

Nonlinear Brillouin amplification of finite-duration seeds in the strong coupling regime

NASA Astrophysics Data System (ADS)

Lehmann, G.; Spatschek, K. H.

2013-07-01

Parametric plasma processes received renewed interest in the context of generating ultra-intense and ultra-short laser pulses up to the exawatt-zetawatt regime. Both Raman as well as Brillouin amplifications of seed pulses were proposed. Here, we investigate Brillouin processes in the one-dimensional (1D) backscattering geometry with the help of numerical simulations. For optimal seed amplification, Brillouin scattering is considered in the so called strong coupling (sc) regime. Special emphasis lies on the dependence of the amplification process on the finite duration of the initial seed pulses. First, the standard plane-wave instability predictions are generalized to pulse models, and the changes of initial seed pulse forms due to parametric instabilities are investigated. Three-wave-interaction results are compared to predictions by a new (kinetic) Vlasov code. The calculations are then extended to the nonlinear region with pump depletion. Generation of different seed layers is interpreted by self-similar solutions of the three-wave interaction model. Similar to Raman amplification, shadowing of the rear layers by the leading layers of the seed occurs. The shadowing is more pronounced for initially broad seed pulses. The effect is quantified for Brillouin amplification. Kinetic Vlasov simulations agree with the three-wave interaction predictions and thereby affirm the universal validity of self-similar layer formation during Brillouin seed amplification in the strong coupling regime.

Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.

2016-03-01

In this paper, structural, electrical and ultraviolet photodetection parameters of RF sputtered-ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare Si substrate as well as Si substrate coated with ultrathin ZnO seed layer to exhibit the effect of seed layer on device performance. AFM image of as-grown ZnO films have exhibited the uniform growth ZnO film over the whole Si substrate with average roughness of 3.2 nm and 2.83 nm for ZnO with and without seed layer respectively. Stronger peak intensity along (002) direction, as shown in XRD spectra confirm that ZnO film grown on ZnO seed layer is having more stable wurtzite structure. Ti/Al point contacts were deposited on top of the ZnO film and a layer of Al was deposited on bottom of Si substrate for using as ohmic contacts for further device characterization at dark and under UV light of 365 nm wavelength. This process is repeated for both the films sequentially. The photo-responsivity of our proposed devices is calculated as 0.34 A/W for seed layer-mediated devices and 0.26 A/W for devices without seed layer. These values are very high as compare to the reported value of photo-responsivity for same kind of ZnO/Si heterojunction device prototypes prepared by other techniques.

Phase relationships in the BaO-Ga2O3-Ta2O5 system and the structure of Ba6Ga21TaO40.

PubMed

Cao, Jiang; Yu, Xiaodi; Kuang, Xiaojun; Su, Qiang

2012-07-16

Phase relationships in the BaO-Ga(2)O(3)-Ta(2)O(5) ternary system at 1200 °C were determined. The A(6)B(10)O(30) tetragonal tungsten bronze (TTB) related solution in the BaO-Ta(2)O(5) subsystem dissolved up to ~11 mol % Ga(2)O(3), forming a ternary trapezoid-shaped TTB-related solid solution region defined by the BaTa(2)O(6), Ba(1.1)Ta(5)O(13.6), Ba(1.58)Ga(0.92)Ta(4.08)O(13.16), and Ba(6)GaTa(9)O(30) compositions in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Two ternary phases Ba(6)Ga(21)TaO(40) and eight-layer twinned hexagonal perovskite solid solution Ba(8)Ga(4-x)Ta(4+0.6x)O(24) were confirmed in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Ba(6)Ga(21)TaO(40) crystallized in a monoclinic cell of a = 15.9130(2) Å, b = 11.7309(1) Å, c = 5.13593(6) Å, β = 107.7893(9)°, and Z = 1 in space group C2/m. The structure of Ba(6)Ga(21)TaO(40) was solved by the charge flipping method, and it represents a three-dimensional (3D) mixed GaO(4) tetrahedral and GaO(6)/TaO(6) octahedral framework, forming mixed 1D 5/6-fold tunnels that accommodate the Ba cations along the c axis. The electrical property of Ba(6)Ga(21)TaO(40) was characterized by using ac impedance spectroscopy.

Structural, electronic and vibrational properties of few-layer 2H-and 1T-TaSe 2

DOE PAGES

Yan, Jia -An; Dela Cruz, Mack A.; Cook, Brandon G.; ...

2015-11-16

Two-dimensional metallic transition metal dichalcogenides (TMDs) are of interest for studying phenomena such as charge-density wave (CDW) and superconductivity. Few-layer tantalum diselenides (TaSe 2) are typical metallic TMDs exhibiting rich CDW phase transitions. However, a description of the structural, electronic and vibrational properties for different crystal phases and stacking configurations, essential for interpretation of experiments, is lacking. We present first principles calculations of structural phase energetics, band dispersion near the Fermi level, phonon properties and vibrational modes at the Brillouin zone center for different layer numbers, crystal phases and stacking geometries. Evolution of the Fermi surfaces as well as themore » phonon dispersions as a function of layer number reveals dramatic dimensionality effects in this CDW material. Lastly, our results indicate strong electronic interlayer coupling, detail energetically possible stacking geometries, and provide a basis for interpretation of Raman spectra.« less

Sulfur Dioxide Enhances Endogenous Hydrogen Sulfide Accumulation and Alleviates Oxidative Stress Induced by Aluminum Stress in Germinating Wheat Seeds

PubMed Central

Zhu, Dong-Bo; Hu, Kang-Di; Guo, Xi-Kai; Liu, Yong; Hu, Lan-Ying; Li, Yan-Hong; Wang, Song-Hua; Zhang, Hua

2015-01-01

Aluminum ions are especially toxic to plants in acidic soils. Here we present evidences that SO2 protects germinating wheat grains against aluminum stress. SO2 donor (NaHSO3/Na2SO3) pretreatment at 1.2 mM reduced the accumulation of superoxide anion, hydrogen peroxide, and malondialdehyde, enhanced the activities of guaiacol peroxidase, catalase, and ascorbate peroxidase, and decreased the activity of lipoxygenase in germinating wheat grains exposed to Al stress. We also observed higher accumulation of hydrogen sulfide (H2S) in SO2-pretreated grain, suggesting the tight relation between sulfite and sulfide. Wheat grains geminated in water for 36 h were pretreated with or without 1 mM SO2 donor for 12 h prior to exposure to Al stress for 48 h and the ameliorating effects of SO2 on wheat radicles were studied. SO2 donor pretreatment reduced the content of reactive oxygen species, protected membrane integrity, and reduced Al accumulation in wheat radicles. Gene expression analysis showed that SO2 donor pretreatment decreased the expression of Al-responsive genes TaWali1, TaWali2, TaWali3, TaWali5, TaWali6, and TaALMT1 in radicles exposed to Al stress. These results suggested that SO2 could increase endogenous H2S accumulation and the antioxidant capability and decrease endogenous Al content in wheat grains to alleviate Al stress. PMID:26078810

Investigation of magnetization dynamics damping in Ni80Fe20/Nd-Cu bilayer at room temperature

NASA Astrophysics Data System (ADS)

Fan, Wei; Fu, Qiang; Qian, Qian; Chen, Qian; Liu, Wanling; Zhou, Xiaochao; Yuan, Honglei; Yue, Jinjin; Huang, Zhaocong; Jiang, Sheng; Kou, Zhaoxia; Zhai, Ya

2018-05-01

Focusing on the Ni80Fe20 (Py)/Nd-Cu bilayers, the magnetization dynamic damping from spin pumping effect is investigated systematically by doping itinerant Cu in rear earth metal Nd. Various Ta/Py/Nd1-xCux/Ta/Si films with x = 0%, 16%, 38%, 46% and 58% are prepared by magnetron sputtering. For every content of Cu, the thickness of Nd-Cu layer is changed from 1 nm to 32 nm. The damping coefficient increases with increasing the thickness of Nd-Cu layer, which shows the trend of the spin pumping behavior. Also, with increasing Cu concentration in the Nd-Cu layer, the damping coefficient decreases, implying that the spin-orbit coupling in Nd-Cu layer is indeed cut down by high itinerant of Cu dopants. It is interesting that the spin diffusion length (λSD) in the Nd-Cu layer for different Cu dopants is not found to increase monotonously.

Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides

NASA Astrophysics Data System (ADS)

Spassov, D.; Paskaleva, A.; Fröhlich, K.; Ivanov, Tz

2017-01-01

The influence of the oxygen content in the dielectric layer and the effect of the bottom electrode on the resistive switching in Au/Pt/TaOx/TiN and Au/Pt/TaOx/Ta structures have been studied. The sputtered TaOx layers have been prepared by using oxygen concentrations of 10 or 7% O 2 in the Ar+O2 working ambient as well as by a gradual variation of the O2 content in the deposition process from 5 to 10%. Two deposition regimes for TiN electrodes have been investigated: reactive sputtering of Ti target in Ar+N2 ambient, and sputtering of TiN target in pure Ar. Bipolar resistive switching behavior is observed in all examined structures. It is demonstrated that the resistive switching effect is affected by the oxygen content in the working ambient as well as by the type and the deposition conditions of the bottom electrodes. Most stable effect, with ON/OFF ratio above 100 is obtained in TaOx deposited with variable O2 content in the ambient. The obtained switching voltage between the high resistive and low resistive state (SET) is about -1.5 V and the reverse changeover (RESET) is ∼2 V. A well pronounced resistive switching is achieved with reactively sputtered TiN while for the other bottom electrodes the effect is negligible.

Film transfer enabled by nanosheet seed layers on arbitrary sacrificial substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dral, A. P.; Nijland, M.; Koster, G.

An approach for film transfer is demonstrated that makes use of seed layers of nanosheets on arbitrary sacrificial substrates. Epitaxial SrTiO{sub 3}, SrRuO{sub 3}, and BiFeO{sub 3} films were grown on Ca{sub 2}Nb{sub 3}O{sub 10} nanosheet seed layers on phlogopite mica substrates. Cleavage of the mica substrates enabled film transfer to flexible polyethylene terephthalate substrates. Electron backscatter diffraction, X-ray diffraction, and atomic force microscopy confirmed that crystal orientation and film morphology remained intact during transfer. The generic nature of this approach is illustrated by growing films on zinc oxide substrates with a nanosheet seed layer. Film transfer to a flexiblemore » substrate was accomplished via acid etching.« less

Step-by-step seeding procedure for preparing HKUST-1 membrane on porous α-alumina support.

PubMed

Nan, Jiangpu; Dong, Xueliang; Wang, Wenjin; Jin, Wanqin; Xu, Nanping

2011-04-19

Metal-organic framework (MOF) membranes have attracted considerable attention because of their striking advantages in small-molecule separation. The preparation of an integrated MOF membrane is still a major challenge. Depositing a uniform seed layer on a support for secondary growth is a main route to obtaining an integrated MOF membrane. A novel seeding method to prepare HKUST-1 (known as Cu(3)(btc)(2)) membranes on porous α-alumina supports is reported. The in situ production of the seed layer was realized in step-by-step fashion via the coordination of H(3)btc and Cu(2+) on an α-alumina support. The formation process of the seed layer was observed by ultraviolet-visible absorption spectroscopy and atomic force microscopy. An integrated HKUST-1 membrane could be synthesized by the secondary hydrothermal growth on the seeded support. The gas permeation performance of the membrane was evaluated. © 2011 American Chemical Society

Oxidation of ZrB2 SiC TaSi2 Materials at Ultra High Temperatures

NASA Technical Reports Server (NTRS)

Opila, E.; Smith, J.; Levine, S.; Lorincz, J.; Reigel, M.

2008-01-01

ZrB2 - 20v% SiC - 20v% TaSi2 was oxidized in stagnant air for ten minute cycles for times up to 100 minutes at 1627 C and 1927 C. The sample oxidized at 1627 C showed oxidation resistance better than that of the standard ZrB2 - 20v% SiC. The sample oxidized at 1927 C, however, showed evidence of liquid phase formation and complex oxidation products. The sample exposed at 1927 C was analyzed in detail by scanning electron microprobe and wavelength dispersive spectroscopy to understand the complex oxidation and melting reactions occurring during exposure. The as hot-pressed material shows the formation of a Zr(Ta)B2 phase in addition to the three phases in the nominal composition already noted. After oxidation, the TaSi2 in the matrix was completely reacted to form Ta(Zr)C. The layered oxidation products included SiO2, ZrO2, Ta2O5, and a complex oxide containing both Zr and Ta. Likely reactions are proposed based on thermodynamic phase stability and phase morphology.

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

NASA Astrophysics Data System (ADS)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Mannans and endo-β-mannanase transcripts are located in different seed compartments during Brassicaceae germination.

PubMed

Carrillo-Barral, Néstor; Matilla, Angel J; Rodríguez-Gacio, María Del Carmen; Iglesias-Fernández, Raquel

2018-03-01

Mannans but not endo-β-mannanases are mainly found in the mucilage layer of two Brassicaceae seeds. Nonetheless, mannanase mobilization from inner to outer seed layers cannot be ruled out. The contribution of endo-β-mannanase (MAN) genes to the germination of the wild-type Sisymbrium officinale and cultivated Brassica rapa (Brassicaceae) species has been explored. In both species, mannans have been localized to the imbibed external seed coat layer (mucilage) by fluorescence immunolocalization and MAN enzymatic activity increases in seeds as imbibition progresses, reaching a peak before 100% germination is achieved. The MAN gene families have been annotated and the expression of their members analyzed in vegetative and reproductive organs. In S. officinale and B. rapa, MAN2, MAN5, MAN6, and MAN7 transcripts accumulate upon seed imbibition. SoMAN7 is the most expressed MAN gene in S. officinale germinating seeds, as occurs with its ortholog in Arabidopsis thaliana, but in B. rapa, the most abundant transcripts are BrMAN2 and BrMAN5. These genes (MAN2, MAN5, MAN6, and MAN7) are localized, by mRNA in situ hybridization, to the micropylar at the endosperm layer and to the radicle in S. officinale, but in B. rapa, these mRNAs are faintly found to the micropylar living seed coat layer and are mainly present at the radicle tip and the vascular bundles. If the domestication process undergone by B. rapa is responsible for these different MAN expression patterns, upon germination remains to be elucidated. Since mannans and MAN genes are not spatially distributed in the same seed tissues, a movement of MAN enzymes that are synthesized with typical signal peptides from the embryo tissues to the mucilage layer (via apoplastic space) is necessary for the mannans to be hydrolyzed.

Influences of top electrode reduction potential and operation ambient on the switching characteristics of tantalum oxide resistive switching memories

NASA Astrophysics Data System (ADS)

Ding, Tse-Ming; Chen, Yi-Ju; Jeng, Jiann-Shing; Chen, Jen-Sue

2017-12-01

Modulation of the oxygen distribution is liable for the electrical performance of oxide-based devices. When the top electrode (TE) is deposited on the active layer, an oxygen exchange layer (OEL) may be formed at the interface. Oxygen ions can be absorbed and offered in OEL to assist resistive switching (RS). In this study, the impact of different TEs (Al, Zr, Ta and Au) on the active layer TaOx is investigated. TEs are chosen based on the reduction potential (E0Al=-2.13V, E0Zr=-1.55V, E0Ta=-0.75V, E0Au=1.52V), which determines whether OEL is formed. Based on TEM micrographs, as the difference of TE reduction potential to E0Ta becomes more negative, a thicker OEL exists. We find that Zr TE device has the most stable I-V characteristic and data retention, while Al TE device suffers from the reset failure, and Au TE device fails to switch. Moreover, we fabricate two different thicknesses (20 nm and 120 nm) of Zr TE and alter the operation ambient to vacuum (10-5 Torr) to study the influence on RS. The magnitude of reset voltage becomes larger when the devices are measured in vacuum ambient. According to these findings, the RS mechanism with different TE materials, thicknesses and at the different operation ambient is established.

Perpendicular magnetic anisotropy in Ta|Co{sub 40}Fe{sub 40}B{sub 20}|MgAl{sub 2}O{sub 4} structures and perpendicular CoFeB|MgAl{sub 2}O{sub 4}|CoFeB magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Li, D. L.; Yuan, Z. H.

2014-09-08

Magnetic properties of Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) thin films sandwiched between Ta and MgAl{sub 2}O{sub 4} layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl{sub 2}O{sub 4} structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy K{sub i} = 1.22 erg/cm{sup 2}, which further increases to 1.30 erg/cm{sup 2} after annealing, while MgAl{sub 2}O{sub 4}/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0 nm, while that for top CoFeB layer is between 0.8 and 1.4 nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a coremore » structure of CoFeB/MgAl{sub 2}O{sub 4}/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.« less

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Teaching from Selfhood: A Personal Growth Journey with Unimaginable Dividends

ERIC Educational Resources Information Center

Tsikata, Prosper Yao

2017-01-01

In this essay, I reflexively narrate my personal travails as a Teaching Associate (TA) in a Midwestern US university and, later, an Assistant Professor in the Southern State of Georgia. I argue that, as a foreign-born TA and, later, an Assistant Professor, I carry extra layers of identity markers that distinguish me from the homegrown professor.…

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics.

PubMed

Cui, Qingsong; Sakhdari, Maryam; Chamlagain, Bhim; Chuang, Hsun-Jen; Liu, Yi; Cheng, Mark Ming-Cheng; Zhou, Zhixian; Chen, Pai-Yen

2016-12-21

We present a new and viable template-assisted thermal synthesis method for preparing amorphous ultrathin transition-metal oxides (TMOs) such as TiO 2 and Ta 2 O 5 , which are converted from crystalline two-dimensional (2D) transition-metal dichalcogenides (TMDs) down to a few atomic layers. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were used to characterize the chemical composition and bonding, surface morphology, and atomic structure of these ultrathin amorphous materials to validate the effectiveness of our synthesis approach. Furthermore, we have fabricated metal-insulator-metal (MIM) diodes using the TiO 2 and Ta 2 O 5 as ultrathin insulating layers with low potential barrier heights. Our MIM diodes show a clear transition from direct tunneling to Fowler-Nordheim tunneling, which was not observed in previously reported MIM diodes with TiO 2 or Ta 2 O 5 as the insulating layer. We attribute the improved performance of our MIM diodes to the excellent flatness and low pinhole/defect densities in our TMO insulting layers converted from 2D TMDs, which enable the low-threshold and controllable electron tunneling transport. We envision that it is possible to use the ultrathin TMOs converted from 2D TMDs as the insulating layer of a wide variety of metal-insulator and field-effect electronic devices for various applications ranging from microwave mixing, parametric conversion, infrared photodetection, emissive energy harvesting, to ultrafast electronic switching.

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190; Barate, P.

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P{sub c}) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determinedmore » only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.« less

Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing

PubMed Central

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G.; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta2O5) sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pCurea, from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta2O5 and Si3N4 sensing membranes. PMID:22163862

Optimization of urea-EnFET based on Ta2O5 layer with post annealing.

PubMed

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si(3)N(4) sensing layer. The ISFETs and EnFETs with annealed Ta(2)O(5) sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pC(urea), from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta(2)O(5) and Si(3)N(4) sensing membranes.

Dynamic changes in the distribution of minerals in relation to phytic acid accumulation during rice seed development.

PubMed

Iwai, Toru; Takahashi, Michiko; Oda, Koshiro; Terada, Yasuko; Yoshida, Kaoru T

2012-12-01

Phytic acid (inositol hexakisphosphate [InsP(6)]) is the storage compound of phosphorus in seeds. As phytic acid binds strongly to metallic cations, it also acts as a storage compound of metals. To understand the mechanisms underlying metal accumulation and localization in relation to phytic acid storage, we applied synchrotron-based x-ray microfluorescence imaging analysis to characterize the simultaneous subcellular distribution of some mineral elements (phosphorus, calcium, potassium, iron, zinc, and copper) in immature and mature rice (Oryza sativa) seeds. This fine-imaging method can reveal whether these elements colocalize. We also determined their accumulation patterns and the changes in phosphate and InsP(6) contents during seed development. While the InsP(6) content in the outer parts of seeds rapidly increased during seed development, the phosphate contents of both the outer and inner parts of seeds remained low. Phosphorus, calcium, potassium, and iron were most abundant in the aleurone layer, and they colocalized throughout seed development. Zinc was broadly distributed from the aleurone layer to the inner endosperm. Copper localized outside the aleurone layer and did not colocalize with phosphorus. From these results, we suggest that phosphorus translocated from source organs was immediately converted to InsP(6) and accumulated in aleurone layer cells and that calcium, potassium, and iron accumulated as phytic acid salt (phytate) in the aleurone layer, whereas zinc bound loosely to InsP(6) and accumulated not only in phytate but also in another storage form. Copper accumulated in the endosperm and may exhibit a storage form other than phytate.

Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

NASA Astrophysics Data System (ADS)

Yan, S. A.; Zhao, W.; Guo, H. X.; Xiong, Y.; Tang, M. H.; Li, Z.; Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.

2015-01-01

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2Ta2O9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Spatial variations of the local density of states modified by CDWs in 1 T- TaS2- xSex

NASA Astrophysics Data System (ADS)

Hasegawa, T.; Yamaguchi, W.; Kim, J.-J.; Wei, W.; Nantoh, M.; Ikuta, H.; Kitazawa, K.; Manivannan, A.; Fujishima, A.; Uchinokura, K.

1994-07-01

Spatial variations of the local density of states (LDOS) near the Fermi level have been observed on the layered dichalcogenides 1 T- TaS2- xSex ( x = 0, 0.2, 2) for the first time. The tunneling spectra on the cleaved surfaces were measured by atomic-site tunneling (AST) spectroscopy technique at room temperature. In 1T-TaS 2, the LDOS was substantially different among the three inequivalent Ta atomic sites induced by the CDW formation. However, the surface electronic structure became homogeneous, as the Se content was increased. By substituting Se for S, the minimum position of the LDOS was systematically shifted to a higher energy side above the Fermi level.

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Self-aligned periodic Ni nano dots embedded in nano-oxide layer

NASA Astrophysics Data System (ADS)

Doi, M.; Izumi, M.; Kawasaki, S.; Miyake, K.; Sahashi, M.

The Ni nano constriction dots embedded in the Ta-nano-oxide layer (NOL) was prepared by the ion beam sputtering (IBS) method. After the various conditions of the oxidations, the structural analyses of the NOL were performed by RHEED, AES and in situ STM/AFM observations. From the current image of the conductive AFM for NOL, the periodically aligned metallic dots with the size around 5-10 nm were successfully observed. The mechanism of the formation of the self-organized aligned Ni nano constriction dots is discussed from the standpoint of the grain size, the crystal orientation, the preferred oxidation of Ta at the diffused interface.

Characteristics of the Energetic Igniters Through Integrating B/Ti Nano-Multilayers on TaN Film Bridge

NASA Astrophysics Data System (ADS)

Yan, YiChao; Shi, Wei; Jiang, HongChuan; Cai, XianYao; Deng, XinWu; Xiong, Jie; Zhang, WanLi

2015-05-01

The energetic igniters through integrating B/Ti nano-multilayers on tantalum nitride (TaN) ignition bridge are designed and fabricated. The X-ray diffraction (XRD) and temperature coefficient of resistance (TCR) results show that nitrogen content has a great influence on the crystalline structure and TCR. TaN films under nitrogen ratio of 0.99 % exhibit a near-zero TCR value of approximately 10 ppm/°C. The scanning electron microscopy demonstrates that the layered structure of the B/Ti multilayer films is clearly visible with sharp and smooth interfaces. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45 V reveal an excellent explosion performance by (B/Ti) n /TaN integration film bridge with small ignition delay time, high explosion temperature, much more bright flash of light, and much large quantities of the ejected product particles than TaN film bridge.

Low-Temperature Synthesis of Vertically Align ZnO Layer on ITO Glass: The Role of Seed Layer and Hydrothermal Process

NASA Astrophysics Data System (ADS)

Sholehah, Amalia; Achmad, NurSumiati; Dimyati, Arbi; Dwiyanti, Yanyan; Partuti, Tri

2017-05-01

ZnO thin layer has a broad potential application in optoelectronic devices. In the present study, vertically align ZnO layers on ITO glass were synthesized using wet chemical method. The seed layers were prepared using electrodeposition method at 3°C. After that, the growing process was carried out using chemical bath deposition (CBD) at 90°C. To improve the structural property of the ZnO layers, hydrothermal technique was used subsequently. Results showed that seeding layer has a great influence on the physical properties of the ZnO layers. Moreover, hydrothermal process conducted after the ZnO growth can enhance the morphological property of the layers. From the experiments, it is found that the ZnO layers has diameter of ∼60 nm with increasing thickness from ∼0.8 to 1.2 μm and band-gap energies of ∼3.2 eV.

Low elastic modulus Ti-Ta alloys for load-bearing permanent implants: enhancing the biodegradation resistance by electrochemical surface engineering.

PubMed

Kesteven, Jazmin; Kannan, M Bobby; Walter, Rhys; Khakbaz, Hadis; Choe, Han-Choel

2015-01-01

In this study, the in vitro degradation behaviour of titanium-tantalum (Ti-Ta) alloys (10-30 wt.% Ta) was investigated and compared with conventional implant materials, i.e., commercially pure titanium (Cp-Ti) and titanium-aluminium-vanadium (Ti6Al4V) alloy. Among the three Ti-Ta alloys studied, the Ti20Ta (6.3×10(-4) mm/y) exhibited the lowest degradation rate, followed by Ti30Ta (1.2×10(-3) mm/y) and Ti10Ta (1.4×10(-3) mm/y). All the Ti-Ta alloys exhibited lower degradation rate than that of Cp-Ti (1.8×10(-3) mm/y), which suggests that Ta addition to Ti is beneficial. As compared to Ti6Al4V alloy (8.1×10(-4) mm/y), the degradation rate of Ti20Ta alloy was lower by ~22%. However, the Ti30Ta alloy, which has closer elastic modulus to that of natural bone, showed ~48% higher degradation rate than that of Ti6Al4V alloy. Hence, to improve the degradation performance of Ti30Ta alloy, an intermediate thin porous layer was formed electrochemically on the alloy followed by calcium phosphate (CaP) electrodeposition. The coated Ti30Ta alloy (3.8×10(-3) mm/y) showed ~53% lower degradation rate than that of Ti6Al4V alloy. Thus, the study suggests that CaP coated Ti30Ta alloy can be a viable material for load-bearing permanent implants. Copyright © 2014 Elsevier B.V. All rights reserved.

Antidamping spin-orbit torques in epitaxial-Py(100)/β-Ta

NASA Astrophysics Data System (ADS)

Tiwari, Dhananjay; Behera, Nilamani; Kumar, Akash; Dürrenfeld, Philipp; Chaudhary, Sujeet; Pandya, D. K.; Åkerman, Johan; Muduli, P. K.

2017-12-01

We perform spin torque ferromagnetic resonance measurements on the Si(100)/TiN(100)/epi-Py(100)/β-Ta system. We demonstrate current induced modulation of the Gilbert damping constant, which is about 30% for a current density of 6.25 × 109 A/m2. We show that the observed modulation of the Gilbert damping constant cannot be explained by spin transfer torques arising from the spin Hall effect of the β-Ta layer. An additional mechanism such as antidamping spin-orbit torque resulting from the interface or the crystalline structure of Py thin films needs to be considered.

Physical properties of spin-valve films grown on naturally oxidized metal nano-oxide surfaces

NASA Astrophysics Data System (ADS)

Mao, Ming; Cerjan, Charlie; Kools, Jacques

2002-05-01

The physical properties of spin-valve films NiFe 25 Å/CoFe 10 Å/Cu(tCu)/CoFe 30 Å/IrMn 70 Å/Ta 20 Å with graded Cu layer thickness (tCu=18-45 Å) grown on the surface of metal nano-oxide layers (NOLs) were studied. The NOLs were formed from ultrathin Al, Cr, Cu, Nb, Ta, CoFe, NiFe, and NiFeCr layers by natural oxidation. The growth of the spin-valve films on NOLs has led to an enhancement in giant magnetoresistance value by up to 48%. A corresponding reduction in minimum film resistance by over 10% confirms that this enhancement originates from an increase in the mean free path of spin-polarized electrons due to the resultant specular reflection at the nano-oxide surfaces. A wide spectrum of oscillatory interlayer exchange coupling dependence on tCu for these NOL-bearing films suggests that a specular nano-oxide surface does not necessarily result in a smoother multilayer structure. The observation of an enhanced exchange biasing among these spin-valve films appears in contradiction to the observed deterioration of their crystallographic quality. As an important application, TaOx, CrOx, and NbOx could be employed as an alternative to AlOx as the barrier layer for magnetic tunnel junctions.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

The Triticum aestivum non-specific lipid transfer protein (TaLtp) gene family: comparative promoter activity of six TaLtp genes in transgenic rice.

PubMed

Boutrot, Freddy; Meynard, Donaldo; Guiderdoni, Emmanuel; Joudrier, Philippe; Gautier, Marie-Françoise

2007-03-01

Plant non-specific lipid transfer proteins (nsLTPs) are encoded by a multigene family and support physiological functions, which remain unclear. We adapted an efficient ligation-mediated polymerase chain reaction (LM-PCR) procedure that enabled isolation of 22 novel Triticum aestivum nsLtp (TaLtp) genes encoding types 1 and 2 nsLTPs. A phylogenetic tree clustered the wheat nsLTPs into ten subfamilies comprising 1-7 members. We also studied the activity of four type 1 and two type 2 TaLtp gene promoters in transgenic rice using the 1-Glucuronidase reporter gene. The activities of the six promoters displayed both overlapping and distinct features in rice. In vegetative organs, these promoters were active in leaves and root vascular tissues while no beta-Glucuronidase (GUS) activity was detected in stems. In flowers, the GUS activity driven by the TaLtp7.2a, TaLtp9.1a, TaLtp9.2d, and TaLtp9.3e gene promoters was associated with vascular tissues in glumes and in the extremities of anther filaments whereas only the TaLtp9.4a gene promoter was active in anther epidermal cells. In developing grains, GUS activity and GUS immunolocalization data evidenced complex patterns of activity of the TaLtp7.1a, TaLtp9.2d, and TaLtp9.4a gene promoters in embryo scutellum and in the grain epicarp cell layer. In contrast, GUS activity driven by TaLtp7.2a, TaLtp9.1a, and TaLtp9.3e promoters was restricted to the vascular bundle of the embryo scutellum. This diversity of TaLtp gene promoter activity supports the hypothesis that the encoded TaLTPs possess distinct functions in planta.

Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

NASA Astrophysics Data System (ADS)

Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

2016-09-01

The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Partida-Manzanera, T.; Roberts, J. W.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Sedghi, N.; Tripathy, S.; Potter, R. J.

2016-01-01

This paper describes a method to optimally combine wide band gap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. (Ta2O5)x(Al2O3)1-x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta2O5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al2O3 to 4.6 eV for pure Ta2O5. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al2O3 up to 25.6 for Ta2O5. The effect of post-deposition annealing in N2 at 600 °C on the interfacial properties of undoped Al2O3 and Ta-doped (Ta2O5)0.12(Al2O3)0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al2O3/GaN-HEMT and (Ta2O5)0.16(Al2O3)0.84/GaN-HEMT samples increased by ˜1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al2O3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

Iridium Interfacial Stack (IRIS)

NASA Technical Reports Server (NTRS)

Spry, David James (Inventor)

2015-01-01

An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Cosmic-Ray Nucleosynthesis of p-nuclei: Yields and Routes

NASA Astrophysics Data System (ADS)

Kusakabe, Motohiko; Mathews, Grant J.

2018-02-01

We investigate the cosmic-ray nucleosynthesis (CRN) of proton-rich stable nuclides (p-nuclides). We calculate the cosmic-ray (CR) energy spectra of heavy nuclides with mass number A=[74,209], taking into account the detailed nuclear spallation, decay, energy loss, and escape from the Galaxy during the CR propagation. We adopt the latest semiempirical formula SPACS for the spallation cross sections and the latest data on nuclear decay. Effective electron-capture decay rates are calculated using the proper cross sections for recombination and ionization in the whole CR energy region. Calculated CR spectral shapes vary for different nuclides. Abundances of proton-rich unstable nuclides increase in CRs with increasing energy relative to those of other nuclides. Yields of the primary and secondary spallation processes and differential yields from respective seed nuclides are calculated. We find that the CR energy region of ≤slant { \\mathcal O }(100) MeV/nucleon predominantly contributes to the total yields. The atomic cross sections in the low-energy range adopted in this study are then necessary. Effects of CRN on the Galactic chemical evolution of p-nuclides are calculated. Important seed nuclides are identified for respective p-nuclides. The contribution of CRN is significant for 180m Ta, accounting for about 20% of the solar abundance. About 87% of the 180m Ta CRN yield can be attributed to the primary process. The most important production routes are reactions of 181Ta, 180Hf, and 182W. CRN yields of other p-nuclides are typically about { \\mathcal O }(10‑4–10‑2) of solar abundances.

[Dynamics of Quercus variabilis seed rain and soil seed bank in different habitats on the north slope of Qinling Mountains].

PubMed

Wu, Min; Zhang, Wen-Hui; Zhou, Jian-Yun; Ma, Chuang; Ma, Li-Wei

2011-11-01

In order to explore the dynamics of Quercus variabilis seed rain and soil seed bank in different habitats on the north slope of Qinling Mountains, three kinds of micro-habitats (understory, forest gap, and forest edge) were selected, with the seed rain quantity and quality of Q. variabilis, seed amount and viability in soil seed bank, as well as the seedling development of Q. variabilis studied. The seed rain of Q. variabilis started from mid August, reached the peak in mid September-early October, and ended at the beginning of November, and there existed differences in the dissemination process, occurrence time, and composition of the seed rain among the three micro-habitats. The seed rain had the maximum intensity (39.55 +/- 5.56 seeds x m(-2)) in understory, the seeds had the earliest landing time, the longest lasting duration, and the highest viability in forest gap, and the mature seeds had the largest proportion in forest edge, accounting for 58.7% of the total. From the ending time of seed rain to next August, the total reserve of soil seed bank was the largest in understory and the smallest in forest edge. In the three habitats, the amount of mature and immature seeds, that of seeds eaten by animals, and the seed viability in soil seed bank all decreased with time. In contrast, the number of moldy seeds increased. The seeds were mainly concentrated in litter layer, a few of them were in 0-2 cm soil layer, and few were in 2-5 cm soil layer. The density of the seedlings varied with habitats, being the largest in forest gap, followed by in forest edge, and the least in understory, which suggested that forest gap was more suitable for the seed germination and seedling growth of Q. variabilis, and thus, appropriate thinning should be taken to increase forest gap to provide favorable conditions for the natural regeneration of Q. variabilis forest.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Nondestructive Measurement of the Evolution of Layer-Specific Mechanical Properties in Sub-10 nm Bilayer Films.

PubMed

Hoogeboom-Pot, Kathleen M; Turgut, Emrah; Hernandez-Charpak, Jorge N; Shaw, Justin M; Kapteyn, Henry C; Murnane, Margaret M; Nardi, Damiano

2016-08-10

We use short wavelength extreme ultraviolet light to independently measure the mechanical properties of disparate layers within a bilayer film for the first time, with single-monolayer sensitivity. We show that in Ni/Ta nanostructured systems, while their density ratio is not meaningfully changed from that expected in bulk, their elastic properties are significantly modified, where nickel softens while tantalum stiffens, relative to their bulk counterparts. In particular, the presence or absence of the Ta capping layer influences the mechanical properties of the Ni film. This nondestructive nanomechanical measurement technique represents the first approach to date able to distinguish the properties of composite materials well below 100 nm in thickness. This capability is critical for understanding and optimizing the strength, flexibility and reliability of materials in a host of nanostructured electronic, photovoltaic, and thermoelectric devices.

Modification of Magnetic Nanocontact Structure by a Bias-Voltage-Induced Stress and Its Influence on Magnetoresistance Effect in TaOx Nano-Oxide Layer Spin Valve

NASA Astrophysics Data System (ADS)

Miyake, Kousaku; Saki, Yosinobu; Suzuki, Ayako; Kawasaki, Shohei; Doi, Masaaki; Sahashi, Masashi

2012-06-01

A magnetic nanocontact spin valve (NCSV) was fabricated by inserting a TaOx nano-oxide layer (NOL) as the spacer layer. Current-perpendicular-to-film-plane (CPP) measurements revealed that the SV had a positive magnetoresistance (MR) ratio. When a high bias voltage was applied to the SV, the fine structure of the NOL changed i.e., the resistance and MR ratio of the device changed irreversibly. The change in device characteristics is attributed to a proportional change in the number of nonmagnetoresistive and magnetoresistive conductive channels in the SV upon high bias voltage application. The decrease in MR ratio accompanied the disappearance of the magnetic nanocontact, suggesting that the positive MR effect was partially due to the presence of magnetic nanocontacts.

Coatings for directional eutectics

NASA Technical Reports Server (NTRS)

Rairden, J. R.; Jackson, M. R.

1976-01-01

Significant advances have been made in the development of an environmentally stable coating for a very high strength, directionally solidified eutectic alloy designated NiTaC-13. Three duplex (two-layer) coatings survived 3,000 hours on a cyclic oxidation test (1,100 C to 90 C). These coatings were fabricated by first depositing a layer of NiCrAl(Y) by vacuum evaporation from an electron beam heated source, followed by depositing an aluminizing overlayer. The alloy after exposure with these coatings was denuded of carbide fibers at the substrate/coating interface. It was demonstrated that TaC fiber denudation can be greatly retarded by applying a carbon-bearing coating. The coating was applied by thermal spraying followed by aluminization. Specimens coated with NiCrAlCY+Al survived over 2,000 hours in the cyclic oxidation test with essentially no TaC denudation. Coating ductility was studied for coated and heat-treated bars, and stress rupture life at 871 C and 1,100 C was determined for coated and cycled bars.

Low-voltage organic strain sensor on plastic using polymer/high- K inorganic hybrid gate dielectrics

NASA Astrophysics Data System (ADS)

Jung, Soyoun; Ji, Taeksoo; Varadan, Vijay K.

2007-12-01

In this paper, gate-induced pentacene semiconductor strain sensors based on hybrid-gate dielectrics using poly-vinylphenol (PVP) and high-K inorganic, Ta IIO 5 are fabricated on flexible substrates, polyethylene naphthalate (PEN). The Ta IIO 5 gate dielectric layer is combined with a thin PVP layer to obtain very smooth and hydrophobic surfaces which improve the molecular structures of pentacene films. The PVP-Ta IIO 5 hybrid-gate dielectric films exhibit a high dielectric capacitance and low leakage current. The sensors adopting thin film transistor (TFT)-like structures show a significantly reduced operating voltage (~6V), and good device characteristics with a field-effect mobility of 1.89 cm2/V•s, a threshold voltage of -0.5 V, and an on/off ratio of 10 3. The strain sensor, one of the practical applications in large-area organic electronics, was characterized with different bending radii of 50, 40, 30, and 20 mm. The sensor output signals were significantly improved with low-operating voltages.

Pickering Emulsion Gels Prepared by Hydrogen-Bonded Zein/Tannic Acid Complex Colloidal Particles.

PubMed

Zou, Yuan; Guo, Jian; Yin, Shou-Wei; Wang, Jin-Mei; Yang, Xiao-Quan

2015-08-26

Food-grade colloidal particles and complexes, which are formed via modulation of the noncovalent interactions between macromolecules and natural small molecules, can be developed as novel functional ingredients in a safe and sustainable way. For this study was prepared a novel zein/tannic acid (TA) complex colloidal particle (ZTP) based on the hydrogen-bonding interaction between zein and TA in aqueous ethanol solution by using a simple antisolvent approach. Pickering emulsion gels with high oil volume fraction (φ(oil) > 50%) were successfully fabricated via one-step homogenization. Circular dichroism (CD) and small-angle X-ray scattering (SAXS) measurements, which were used to characterize the structure of zein/TA complexes in ethanol solution, clearly showed that TA binding generated a conformational change of zein without altering their supramolecular structure at pH 5.0 and intermediate TA concentrations. Consequently, the resultant ZTP had tuned near neutral wettability (θ(ow) ∼ 86°) and enhanced interfacial reactivity, but without significantly decreased surface charge. These allowed the ZTP to stabilize the oil droplets and further triggered cross-linking to form a continuous network among and around the oil droplets and protein particles, leading to the formation of stable Pickering emulsion gels. Layer-by-layer (LbL) interfacial architecture on the oil-water surface of the droplets was observed, which implied a possibility to fabricate hierarchical interface microstructure via modulation of the noncovalent interaction between hydrophobic protein and natural polyphenol.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Bullock, James; Cuevas, Andres

2015-05-18

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negativemore » fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.« less

Tandem Core–Shell Si–Ta 3N 5 Photoanodes for Photoelectrochemical Water Splitting

DOE PAGES

Narkeviciute, Ieva; Chakthranont, Pongkarn; Mackus, Adriaan J. M.; ...

2016-11-22

Here, nanostructured core–shell Si–Ta 3N 5 photoanodes were designed and synthesized to overcome charge transport limitations of Ta 3N 5 for photoelectrochemical water splitting. The core–shell devices were fabricated by atomic layer deposition of amorphous Ta 2O 5 onto nanostructured Si and subsequent nitridation to crystalline Ta 3N 5. Nanostructuring with a thin shell of Ta 3N 5 results in a 10-fold improvement in photocurrent compared to a planar device of the same thickness. In examining thickness dependence of the Ta 3N 5 shell from 10 to 70 nm, superior photocurrent and absorbed-photon-to-current efficiencies are obtained from the thinner Tamore » 3N 5 shells, indicating minority carrier diffusion lengths on the order of tens of nanometers. The fabrication of a heterostructure based on a semiconducting, n-type Si core produced a tandem photoanode with a photocurrent onset shifted to lower potentials by 200 mV. CoTiO x and NiO x water oxidation cocatalysts were deposited onto the Si–Ta 3N 5 to yield active photoanodes that with NiO x retained 50–60% of their maximum photocurrent after 24 h chronoamperometry experiments and are thus among the most stable Ta 3N 5 photoanodes reported to date.« less

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

Selenium-assisted controlled growth of graphene-Bi2Se3 nanoplates hybrid Dirac materials by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Sun, Zhencui; Man, Baoyuan; Yang, Cheng; Liu, Mei; Jiang, Shouzhen; Zhang, Chao; Zhang, Jiaxin; Liu, Fuyan; Xu, Yuanyuan

2016-03-01

Se seed layers were used to synthesize the high-quality graphene-Bi2Se3 nanoplates hybrid Dirac materials via chemical vapor deposition (CVD) method. The morphology, crystallization and structural properties of the hybrid Dirac materials were characterized by SEM, EDS, Raman, XRD, AFM and HRTEM. The measurement results verify that the Se seed layer on the graphene surface can effectively saturate the surface dangling bonds of the graphene, which not only impel the uniform Bi2Se3 nanoplates growing along the horizontal direction but also can supply enough Se atoms to fill the Se vacancies. We also demonstrate the Se seed layer can effectively avoid the interaction of Bi2Se3 and the graphene. Further experiments testify the different Se seed layer on the graphene surface can be used to control the density of the Bi2Se3 nanoplates.

Morpho-anatomy, imbibition, viability and germination of the seed of Anadenanthera colubrina var. cebil (Fabaceae).

PubMed

Varela, Rodolfo Omar; Albornoz, Patricia Liliana

2013-09-01

Seed biology is a relevant aspect of tropical forests because it is central to the understanding of processes of plant establishment, succession and natural regeneration. Anadenanthera colubrina var. cebil is a timber tree from South America that produces large seeds with thin weak teguments, which is uncommon among legumes. This study describes the morphology and anatomy of the seed coat, the viability, imbibition, and germination in this species. Seeds used during the essays came from 10 trees that grow naturally in Horco Molle, province of Tucumán, Argentina. Seed morphology was described from a sample of 20 units. The seed coat surface was examined with a scanning electron microscope. Transverse sections of hydrated and non-hydrated seeds were employed to describe the histological structure of the seed coat. Hydration, viability and germination experiments were performed under laboratory controlled conditions; and the experimental design consisted of 10 replicas of 10 seeds each. Viability and germination tests were conducted using freshly fallen seeds and seeds stored for five months. Morphologically the seeds of A. colubrina var. cebil are circular to subcircular, laterally compressed, smooth, bright brown and have a horseshoe fissure line (= pleurogram) on both sides. The seed coat comprises five tissue layers and a double (external and internal) cuticle. The outer cuticle (on the epidermis) is smooth and interrupted by microcracks and pores of variable depth. The epidermis consists of macroesclereids with non-lignified secondary walls. This layer is separated from the underlying ones during seed hydration. The other layers of internal tissues are comprised of osteosclereids, parenchyma, osteosclereids, and macrosclereids. The percentage of viable seeds was 93%, decreasing to 75% in seeds with five months old. Seed mass increased 76% after the first eight hours of hydration. Germination percentage was 75% after 76 hours. Germination of seeds stored for five months decreased to 12%. The results showed that seeds of A. colubrina var. cebil are highly permeable and germinate directly without a dormant period.

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Alnoor, Hatim; Pozina, Galia; Khranovskyy, Volodymyr; Liu, Xianjie; Iandolo, Donata; Willander, Magnus; Nur, Omer

2016-04-01

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (˜575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polat, Ozgur; Ertugrul, Memhet; Thompson, James R

To obtain an engineered surface for deposition of high-Tc superconductors, nanoscale modulations of the surface of the underlying LaMnO3 (LMO) cap layer is a potential source for generating microstructural defects in YBa2Cu3O7- (YBCO) films. These defects may improve the flux-pinning and consequently increase the critical current density, Jc. To provide such nanoscale modulation via a practical and scalable process, tantalum (Ta) and palladium (Pd) nano-islands were deposited using dc-magnetron sputtering on the surface of the cap layer of commercial metal tape templates for second-generation wires. The size and density of these nano-islands can be controlled by changing sputtering conditions suchmore » as the power and deposition time. Compared to the reference sample grown on an untreated LMO cap layer, the YBCO films grown on the LMO cap layers with Ta or Pd nano-islands exhibited improved in-field Jc performance. Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) were used to assess the evolving size and density of the nano-islands.« less

Crystal Structure and Antiferromagnetic Ordering of Quasi-2D [Cu(HF2)(pyz)2]TaF6 (pyz=pyrazine)

NASA Astrophysics Data System (ADS)

Manson, J. L.; Schlueter, J. A.; McDonald, R. D.; Singleton, J.

2010-04-01

The crystal structure of the title compound was determined by X-ray diffraction at 90 and 295 K. Copper(II) ions are coordinated to four bridging pyz ligands to form square layers in the ab-plane. Bridging HF2- ligands join the layers together along the c-axis to afford a tetragonal, three-dimensional (3D) framework that contains TaF6- anions in every cavity. At 295 K, the pyz rings lie exactly perpendicular to the layers and cooling to 90 K induces a canting of those rings. Magnetically, the compound exhibits 2D antiferromagnetic correlations within the 2D layers with an exchange interaction of -13.1(1) K. Weak interlayer interactions, as mediated by Cu-F-H-F-Cu, leads to long-range magnetic order below 4.2 K. Pulsed-field magnetization data at 0.5 K show a concave curvature with increasing B and reveal a saturation magnetization at 35.4 T.

Design and Development of Mixed-Metal Oxide Photocatalysts: the Band Engineering Approach

NASA Astrophysics Data System (ADS)

Boltersdorf, Jonathan Andrew

The design and development of mixed-metal oxides incorporating Ag(I), Pb(II), Sn(II), and Bi(III), i.e., with filled d10 or d10s2 electron configurations, have yielded new approaches to tune optical and photocatalytic properties for solar energy conversion. My research efforts in the area of solid-state photochemistry have focused on utilizing flux-mediated ion-exchange methods in conjunction with the band engineering approach to synthesize new materials for solar energy driven total water splitting. Layered perovskite phases and the polysomatic family of tantalate/niobate structures, with the general formula Am+ ( n+1)/mB(3 n+1)O(8n +3) (A = Na, Ag; B = Ta, Nb), have received increasing attention owing to their synthetic flexibility, tunable optical band gaps, and photocatalytic activities for total water splitting. Structures in the family of A m+ (n+1)/ mB(3n +1)O(8n+3) structures are based on the stacking of pentagonal bipyramidal layers, where n defines the average thickness (1 ≤ n ≤ 2) of the BO7 layers that alternate with isolated BO6 octahedra surrounded by A-site cations. Synthetic limitations in the discovery of new phases within the layered perovskites and the Am + (n+1)/mB(3 n+1)O(8n +3) structural families can be addressed with the aid of a metal-salt solvent, known as the molten-salt flux method. The flux synthetic route requires the use of an inorganic salt heated above its melting temperature in order to serve as a solvent system for crystallization. Molten fluxes allow for synthetic modification of particle characteristics and can enable the low temperature stabilization of new compositions and phases with limited stability using ion-exchange reactions (e.g., PbTa4O11, AgLaNb 2O7). Solid-state and flux-mediated exchange methods were utilized in order to synthetically explore and investigate the layered perovskites ALaNb2O7, AA2Nb3O 10, A'2La2Ti3O10 (A' = Rb, Ag; A = Ca, Sr), the Am+ (n+1)/mB 3n+1O(8 n+3) structural family (Am + = Na(I), Ag(I), Pb(II), Sn(II), Bi(III); B = Ta, Nb), Pb3Ta 4O13, PbTa2O6, Bi7Ta 3O18, and Sn2TiO4. The impact of the dimensionality of the structural features on the photocatalytic activities of the metal-oxides will be examined. A comparison of the influence of Ag(I), Pb(II), Sn(II), and Bi(III) cations in combination with Ti(IV), Nb(V), and Ta(V) cations on the optical properties and photocatalytic rates of the mixed-metal oxides will be presented. The results of these investigations have led to new insights into synthetic strategies for the development of new metal-oxide photocatalysts, which have aided in understanding the effects of transition and post-transition metals, structural features, and flux-mediated synthesis methods on the optical and photocatalytic properties of metal oxides for solar fuel production.

Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henegar, Alex J.; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

Atomic layer deposition (ALD) was used to deposit Ta{sub 2}O{sub 5} on etched and native oxide-covered InAs(100) using pentakis dimethyl amino tantalum and H{sub 2}O at 200–300 °C. The transport and removal of the native oxides during the ALD process was investigated using x-ray photoelectron spectroscopy (XPS). Depositions above 200 °C on etched surfaces protected the interface from reoxidation. On native oxide-covered surfaces, depositions resulted in enhanced native oxide removal at higher temperatures. The arsenic oxides were completely removed above 250 °C after 3 nm of film growth, but some of the As{sub 2}O{sub 3} remained in the film at lower temperatures. Angle-resolved andmore » sputter depth profiling XPS confirmed indium and arsenic oxide migration into the Ta{sub 2}O{sub 5} film at deposition temperatures as low as 200 °C. Continuous removal of both arsenic and indium oxides was confirmed even after the deposition of several monolayers of a coalesced Ta{sub 2}O{sub 5} film, and it was demonstrated that native oxide transport is a prevalent component of the interface “clean-up” mechanism.« less

Manganoporphyrin-Polyphenol Multilayer Capsules as Radical and Reactive Oxygen Species (ROS) Scavengers

DOE PAGES

Alford, Aaron; Kozlovskaya, Veronika; Xue, Bing; ...

2017-12-18

Local modulation of oxidative stress is crucial for a variety of biochemical events including cellular differentiation, apoptosis, and defense against pathogens. Currently employed natural and synthetic antioxidants exhibit a lack of biocompatibility, bioavailability, and chemical stability, resulting in limited capability to scavenge reactive oxygen species (ROS). To mediate these drawbacks, we have developed a synergistic manganoporphyrin-polyphenol polymeric nanothin coating and hollow microcapsules with efficient antioxidant activity and controllable ROS modulation. These materials are produced by multilayer assembly of a natural polyphenolic antioxidant, tannic acid (TA), with a synthesized copolymer of polyvinylpyrrolidone containing a manganoporphyrin modality (MnP-PVPON) which mimics the enzymaticmore » antioxidant superoxide dismutase. The redox activity of the copolymer is demonstrated to dramatically increase the antioxidant response of MnP-PVPON/TA capsules versus unmodified PVPON/TA capsules through reduction of a radical cationic dye and to significantly suppress the proliferation of superoxide via cytochrome C competition. Inclusion of MnP-PVPON as an outer layer enhances radical-scavenging activity as compared to localization of the layer in the middle or inner part of the capsule shell. In addition, we demonstrate that TA is crucial for the synergistic radical-scavenging activity of the MnP-PVPON/TA system which exhibits a combined superoxide dismutase-like ability and catalase-like activity in response to the free radical superoxide challenge. The MnP-PVPON/TA capsules exhibit a negligible, 8% loss of shell thickness upon free radical treatment, while PVPON/TA capsules lose 39% of their shell thickness due to the noncatalytic free-radical-scavenging of TA, as demonstrated by small angle neutron scattering (SANS). Finally, we have found the manganoporphyrin-polyphenol capsules to be nontoxic to splenocytes from NOD mice after 48 h incubation. In conclusion, our study illustrates the strong potential of combining catalytic activity of manganoporphyrins with natural polyphenolic antioxidants to design efficient free-radical-scavenging materials that may eventually be used in antioxidant therapies and as free radical dissipating protective carriers of biomolecules for biomedical or industrial applications.« less

Manganoporphyrin-Polyphenol Multilayer Capsules as Radical and Reactive Oxygen Species (ROS) Scavengers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alford, Aaron; Kozlovskaya, Veronika; Xue, Bing

Local modulation of oxidative stress is crucial for a variety of biochemical events including cellular differentiation, apoptosis, and defense against pathogens. Currently employed natural and synthetic antioxidants exhibit a lack of biocompatibility, bioavailability, and chemical stability, resulting in limited capability to scavenge reactive oxygen species (ROS). To mediate these drawbacks, we have developed a synergistic manganoporphyrin-polyphenol polymeric nanothin coating and hollow microcapsules with efficient antioxidant activity and controllable ROS modulation. These materials are produced by multilayer assembly of a natural polyphenolic antioxidant, tannic acid (TA), with a synthesized copolymer of polyvinylpyrrolidone containing a manganoporphyrin modality (MnP-PVPON) which mimics the enzymaticmore » antioxidant superoxide dismutase. The redox activity of the copolymer is demonstrated to dramatically increase the antioxidant response of MnP-PVPON/TA capsules versus unmodified PVPON/TA capsules through reduction of a radical cationic dye and to significantly suppress the proliferation of superoxide via cytochrome C competition. Inclusion of MnP-PVPON as an outer layer enhances radical-scavenging activity as compared to localization of the layer in the middle or inner part of the capsule shell. In addition, we demonstrate that TA is crucial for the synergistic radical-scavenging activity of the MnP-PVPON/TA system which exhibits a combined superoxide dismutase-like ability and catalase-like activity in response to the free radical superoxide challenge. The MnP-PVPON/TA capsules exhibit a negligible, 8% loss of shell thickness upon free radical treatment, while PVPON/TA capsules lose 39% of their shell thickness due to the noncatalytic free-radical-scavenging of TA, as demonstrated by small angle neutron scattering (SANS). Finally, we have found the manganoporphyrin-polyphenol capsules to be nontoxic to splenocytes from NOD mice after 48 h incubation. In conclusion, our study illustrates the strong potential of combining catalytic activity of manganoporphyrins with natural polyphenolic antioxidants to design efficient free-radical-scavenging materials that may eventually be used in antioxidant therapies and as free radical dissipating protective carriers of biomolecules for biomedical or industrial applications.« less

Optical Thin Film Coating Having High Damage Resistance in Near-Stoichiometric MgO-Doped LiTaO3

NASA Astrophysics Data System (ADS)

Tateno, Ryo; Kashiwagi, Kunihiro

2008-08-01

Currently, High power and compact red, green, and blue (RGB) lasers are being considered for use in large screen laser televisions and reception-lobby projectors. Among these three laser sources, green semiconductor lasers are expensive and exhibit inferior performance in terms of the semiconductor material used, making it difficult to achieve a high output. In this study, we examined the use of our coating on MgO-doped LiTaO3, using a mirror coated with a multilayer film. Over a substrate, a Ta2O5 film was used to coat a high-refractive-index film layer, and a SiO2 film was used to coat a low-refractive-index film layer. To improve reflectivity, we designed the peak of the electric field intensity to be in the film layer with the low refractive index. As a result, the film endurance of 100 J/cm2 was obtained by one-on-one testing. With the nonlinear crystal material, the mirror without our coating exhibited a damage threshold of 33 J/cm2; however, after coating, this mirror demonstrated a higher damage threshold of 47 J/cm2. Thus, the film we fabricated using this technique is useful for improving the strength and durability of laser mirrors.

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

Low emissivity high-temperature tantalum thin film coatings for silicon devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinnerbauer, Veronika; Senkevich, Jay J.; Joannopoulos, John D.

The authors study the use of thin ( ~230 nm ) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 °C ). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found thatmore » after annealing at temperatures ≥900 °C the emissivity in the near infrared ( 1–3 μm ) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 °C , which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta₂O₅ layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion.« less

Investigation of Gas Seeding for Planar Laser-Induced Fluorescence in Hypersonic Boundary Layers

NASA Technical Reports Server (NTRS)

Arisman, C. J.; Johansen, C. T.; Bathel, B. F.; Danehy, P. M.

2015-01-01

Numerical simulations of the gas-seeding strategies required for planar laser-induced fluorescence in a Mach 10 (approximately Mach 8.2 postshock) airflow were performed. The work was performed to understand and quantify the adverse effects associated with gas seeding and to assess various types of seed gas that could potentially be used in future experiments. In prior experiments, NO and NO2 were injected through a slot near the leading edge of a flatplate wedge model used in NASA Langley Research Center's 31 in. Mach 10 air tunnel facility. In this paper, nitric oxide, krypton, and iodine gases were simulated at various injection rates. Simulations showing the deflection of the velocity boundary layer for each of the cases are presented. Streamwise distributions of velocity and concentration boundary-layer thicknesses, as well as vertical distributions of velocity, temperature, and mass distributions, are presented for each of the cases. A comparison between simulated streamwise velocity profiles and experimentally obtained molecular tagging velocimetry profiles using a nitric oxide seeding strategy is performed to verify the influence of such a strategy on the boundary layer. The relative merits of the different seeding strategies are discussed. The results from a custom solver based on OpenFOAM version 2.2.1 are compared against results obtained from ANSYS® Fluent version 6.3.

Coexistence of superconductivity and magnetism by chemical design

NASA Astrophysics Data System (ADS)

Coronado, Eugenio; Martí-Gastaldo, Carlos; Navarro-Moratalla, Efrén; Ribera, Antonio; Blundell, Stephen J.; Baker, Peter J.

2010-12-01

Although the coexistence of superconductivity and ferromagnetism in one compound is rare, some examples of such materials are known to exist. Methods to physically prepare hybrid structures with both competing phases are also known, which rely on the nanofabrication of alternating conducting layers. Chemical methods of building up hybrid materials with organic molecules (superconducting layers) and metal complexes (magnetic layers) have provided examples of superconductivity with some magnetic properties, but not fully ordered. Now, we report a chemical design strategy that uses the self assembly in solution of macromolecular nanosheet building blocks to engineer the coexistence of superconductivity and magnetism in [Ni0.66Al0.33(OH)2][TaS2] at ~4 K. The method is further demonstrated in the isostructural [Ni0.66Fe0.33(OH)2][TaS2], in which the magnetic ordering is shifted from 4 K to 16 K.

Characteristics of the Energetic Igniters Through Integrating B/Ti Nano-Multilayers on TaN Film Bridge.

PubMed

Yan, YiChao; Shi, Wei; Jiang, HongChuan; Cai, XianYao; Deng, XinWu; Xiong, Jie; Zhang, WanLi

2015-12-01

The energetic igniters through integrating B/Ti nano-multilayers on tantalum nitride (TaN) ignition bridge are designed and fabricated. The X-ray diffraction (XRD) and temperature coefficient of resistance (TCR) results show that nitrogen content has a great influence on the crystalline structure and TCR. TaN films under nitrogen ratio of 0.99 % exhibit a near-zero TCR value of approximately 10 ppm/°C. The scanning electron microscopy demonstrates that the layered structure of the B/Ti multilayer films is clearly visible with sharp and smooth interfaces. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45 V reveal an excellent explosion performance by (B/Ti) n /TaN integration film bridge with small ignition delay time, high explosion temperature, much more bright flash of light, and much large quantities of the ejected product particles than TaN film bridge.

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

2013-08-01

The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. N.; Choi, H. W.; Lai, P. T., E-mail: laip@eee.hku.hk

2015-11-23

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-likemore » interface and near-interface traps.« less

Photochemical bonding of epithelial cell-seeded collagen lattice to rat muscle layer for esophageal tissue engineering: a pilot study

NASA Astrophysics Data System (ADS)

Chan, Barbara P.; Sato, M.; Vacanti, Joseph P.; Kochevar, Irene E.; Redmond, Robert W.

2005-04-01

Bilayered tube structures consist of epithelial cell-seeded collagen lattice and muscle layer have been fabricated for esophageal tissue engineering. Good adhesion between layers in order to facilitate cell infiltration and neovascularization in the collagen lattice is required. Previous efforts include using other bioglues such as fibrin glue and silicone tube as the physical support. However, the former is subjected to chances of transmitting blood-born infectious disease and is time consuming while the latter requires a second surgical procedure. The current project aimed to bond the cell-seeded collagen lattice to muscle layer using photochemical bonding, which has previously been demonstrated a rapid and non-thermal procedure in bonding collagenous tissues. Rat esophageal epithelial cells were seeded on collagen lattice and together with the latissimus dorsi muscle layer, were exposed to a photosensitizer rose Bengal at the bonding surface. An argon laser was used to irradiate the approximated layers. Bonding strength was measured during the peeling test of the collagen layer from the muscle layer. Post-bonding cell viability was assessed using a modified NADH-diaphorase microassay. A pilot in vivo study was conducted by directly bonding the cell-seeded collagen layer onto the muscle flap in rats and the structures were characterized histologically. Photochemical bonding was found to significantly increase the adherence at the bonding interface without compromising the cell viability. This indicates the feasibility of using the technique to fabricate multi-layered structures in the presence of living cells. The pilot animal study demonstrated integration of the collagen lattice with the muscle layer at the bonding interface although the subsequent surgical manipulation disturbed the integration at some region. This means that an additional procedure removing the tube could be avoided if the approximation and thus the bonding are optimized. Cell infiltration and neovascularization were also evident demonstrating that direct bonding of engineered tissue structures in particular those with low processability such as collagen lattice to the host tissue is feasible.

Anomalous Nernst effect in a microfabricated thermoelectric element made of chiral antiferromagnet Mn3Sn

NASA Astrophysics Data System (ADS)

Narita, Hideki; Ikhlas, Muhammad; Kimata, Motoi; Nugroho, Agustinus Agung; Nakatsuji, Satoru; Otani, YoshiChika

2017-11-01

Toward realizing a thermopile made of the chiral anti-ferromagnet Mn3Sn, focused ion beam (FIB) lithography was employed to microfabricate a thermoelectric element consisting of a Ta/Al2O3/Mn3Sn layered structure. In this device, the Ta layer acts as a heater producing Joule heat diffusing across the Al2O3 insulating layer into the thin Mn3Sn layer. The measured Nernst signal exhibits a clear hysteresis in an applied temperature gradient and magnetic field at 300 K, and its magnitude is proportional to the square of the electrical current applied to the Ta heater. The spontaneous, zero field voltage signal in the device is of the order of a few μV, which is almost the same order of magnitude as observed in the bulk single-crystal Mn3Sn under a temperature gradient. The anomalous Nernst coefficient SANE of the microfabricated element was determined using a temperature gradient simulated by finite-element modeling. The obtained value of SANE is 0.27 μV/K, which is in good agreement with that of the reported experimental value of SANE (0.3 μV/K) for bulk single-crystal Mn3Sn. This result indicates that FIB microfabrication does not significantly alter the thermoelectric properties of bulk Mn3Sn. As the chiral antiferromagnet produces almost no stray field, our study opens the avenue for the fabrication of an efficient thermopile by densely packing the microfabricated antiferromagnetic elements.

Seed Anatomy and Water Uptake in Relation to Seed Dormancy in Opuntia tomentosa (Cactaceae, Opuntioideae)

PubMed Central

Orozco-Segovia, A.; Márquez-Guzmán, J.; Sánchez-Coronado, M. E.; Gamboa de Buen, A.; Baskin, J. M.; Baskin, C. C.

2007-01-01

Background and Aims There is considerable confusion in the literature concerning impermeability of seeds with ‘hard’ seed coats, because the ability to take up (imbibe) water has not been tested in most of them. Seeds of Opuntia tomentosa were reported recently to have a water-impermeable seed coat sensu lato (i.e. physical dormancy), in combination with physiological dormancy. However, physical dormancy is not known to occur in Cactaceae. Therefore, the aim of this study was to determine if seeds of O. tomentosa are water-permeable or water-impermeable, i.e. if they have physical dormancy. Methods The micromorphology of the seed coat and associated structures were characterized by SEM and light microscopy. Permeability of the seed-covering layers was assessed by an increase in mass of seeds on a wet substrate and by dye-tracking and uptake of tritiated water by intact versus scarified seeds. Key Results A germination valve and a water channel are formed in the hilum–micropyle region during dehydration and ageing in seeds of O. tomentosa. The funicular envelope undoubtedly plays a role in germination of Opuntia seeds via restriction of water uptake and mechanical resistance to expansion of the embryo. However, seeds do not exhibit any of three features characteristic of those with physical dormancy. Thus, they do not have a water-impermeable layer(s) of palisade cells (macrosclereids) or a water gap sensu stricto and they imbibe water without the seed coat being disrupted. Conclusions Although dormancy in seeds of this species can be broken by scarification, they have physiological dormancy only. Further, based on information in the literature, it is concluded that it is unlikely that any species of Opuntia has physical dormancy. This is the first integrative study of the anatomy, dynamics of water uptake and dormancy in seeds of Cactaceae subfamily Opuntioideae. PMID:17298989

A decrease in phytic acid content substantially affects the distribution of mineral elements within rice seeds.

PubMed

Sakai, Hiroaki; Iwai, Toru; Matsubara, Chie; Usui, Yuto; Okamura, Masaki; Yatou, Osamu; Terada, Yasuko; Aoki, Naohiro; Nishida, Sho; Yoshida, Kaoru T

2015-09-01

Phytic acid (myo-inositol hexakisphosphate; InsP6) is the storage compound of phosphorus and many mineral elements in seeds. To determine the role of InsP6 in the accumulation and distribution of mineral elements in seeds, we performed fine mappings of mineral elements through synchrotron-based X-ray microfluorescence analysis using developing seeds from two independent low phytic acid (lpa) mutants of rice (Oryza sativa L.). The reduced InsP6 in lpa seeds did not affect the translocation of mineral elements from vegetative organs into seeds, because the total amounts of phosphorus and the other mineral elements in lpa seeds were identical to those in the wild type (WT). However, the reduced InsP6 caused large changes in mineral localization within lpa seeds. Phosphorus and potassium in the aleurone layer of lpa greatly decreased and diffused into the endosperm. Zinc and copper, which were broadly distributed from the aleurone layer to the inner endosperm in the WT, were localized in the narrower space around the aleurone layer in lpa mutants. We also confirmed that similar distribution changes occurred in transgenic rice with the lpa phenotype. Using these results, we discussed the role of InsP6 in the dynamic accumulation and distribution patterns of mineral elements during seed development. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Effect of deposition temperature on morphological, magnetic and elastic properties of ultrathin Co49Pt51 films

NASA Astrophysics Data System (ADS)

Si Abdallah, F.; Chérif, S. M.; Bouamama, Kh.; Roussigné, Y.; Hsu, J.-H.

2018-03-01

Morphological, magnetic and elastic properties of 5 nm-thick Co49Pt51 films, sputtered on glass substrates, with 20 nm-thick Ta (seed) and Pt (buffer) layers were studied as function of the deposition temperature Td ranging between room temperature and 350° C. Atomic and magnetic force microscopy, vibrating sample magnetometer and Brillouin light scattering techniques were used to investigate the root mean square (RMS) roughness, the magnetic domain configuration, the coercive field (Hc), the perpendicular magnetic anisotropy (PMA), and the dynamic magnetic and elastic properties of the films with Td. The results show that surface uniformity was enhanced since the RMS roughness decreases with Td while magnetic domains typical of films with high PMA are observed. Hc and PMA are found to sensibly increase with Td. The dynamic magnetization behavior is characterized by magnetic modes related with the co-existence of hard and soft magnetic areas within the samples. The elastic properties of the stack were first analyzed by means of a model describing the main variation of the elastic wave frequencies within the frame of weighted average thickness, density, Young's modulus and Poisson coefficient of all the layers constituting the stacks. However, while Hc and PMA keep increasing with Td, a more precise experimental analysis of the mechanical behavior shows that the group velocity starts increasing and finally decreases with Td, suggesting that knowledge of the influence of Td on the mechanical properties of each individual layer composing the stack is required to obtain a more accurate analysis.

Magnetoresistance of antiferromagnetic Ir22Mn78-pinned spin filter specular spin valves

NASA Astrophysics Data System (ADS)

Hwang, J. Y.; Kim, M. Y.; Rhee, J. R.; Lee, S. S.; Hwang, D. G.; Yu, S. C.; Lee, H. B.

2004-06-01

Specular spin valves (SSVs) having the spin filter layer (SFL) in contact with the ultrathin free layer of composition Ta3/NiFe2/IrMn7/CoFe1/(NOL1)/CoFe2/Cu1.8/CoFe(tF)/Cu(tSF)/(NOL2)/Ta3.5 (in nm) deposited by magnetron sputtering were studied. For these antiferromagnetic Ir22Mn78-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness (tF) and the SFL thickness (tSF) were 1.5 nm, and a MR ratio higher than 11% was maintained even when tF was reduced to 1.0 nm. This was due to an increase of specular electrons by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field (Hint) between the free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer (Hcf) was significantly reduced as compared to traditional spin valves (TSV), and remained as low as 4 Oe when tF varied from 1 to 4 nm. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Iandolo, Donata; Willander, Magnus

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealedmore » by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (∼575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.« less

Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buršík, J., E-mail: bursik@iic.cas.cz; Kužel, R.; Knížek, K.

2013-07-15

Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature rampmore » were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.« less

Tribological properties of amorphous hydrogenated (a-C:H) and hydrogen-free tetrahedral (ta-C) diamond-like carbon coatings under jatropha biodegradable lubricating oil at different temperatures

NASA Astrophysics Data System (ADS)

Mobarak, H. M.; Masjuki, H. H.; Mohamad, E. Niza; Kalam, M. A.; Rashedul, H. K.; Rashed, M. M.; Habibullah, M.

2014-10-01

The application of diamond-like carbon (DLC) coatings on automotive components is emerging as a favorable strategy to address the recent challenges in the industry. DLC coatings can effectively lower the coefficient of friction (CoF) and wear rate of engine components, thereby improving their fuel efficiency and durability. The lubrication of ferrous materials can be enhanced by a large amount of unsaturated and polar components of oils. Therefore, the interaction between nonferrous coatings (e.g., DLC) and vegetable oil should be investigated. A ball-on-plate tribotester was used to run the experiments. Stainless steel plates coated with amorphous hydrogenated (a-C:H) DLC and hydrogen-free tetrahedral (ta-C) DLC that slide against 440C stainless steel ball were used to create a ball-on-plate tribotester. The wear track was investigated through scanning electron microscopy. Energy dispersive and X-ray photoelectron spectroscopies were used to analyze the tribofilm inside the wear track. Raman analysis was performed to investigate the structural changes in the coatings. At high temperatures, the CoF in both coatings decreased. The wear rate, however, increased in the a-C:H but decreased in the ta-C DLC-coated plates. The CoF and the wear rate (coated layer and counter surface) were primarily influenced by the graphitization of the coating. Tribochemical films, such as polyphosphate glass, were formed in ta-C and acted as protective layers. Therefore, the wear rate of the ta-C DLC was lower than that of the-C:H DLC.

Fabrication and Characterization of Nanoporous Niobia, and Nanotubular Tantala, Titania and Zirconia via Anodization

PubMed Central

Minagar, Sepideh; Berndt, Christopher C.; Wen, Cuie

2015-01-01

Valve metals such as titanium (Ti), zirconium (Zr), niobium (Nb) and tantalum (Ta) that confer a stable oxide layer on their surfaces are commonly used as implant materials or alloying elements for titanium-based implants, due to their exceptional high corrosion resistance and excellent biocompatibility. The aim of this study was to investigate the bioactivity of the nanostructures of tantala (Ta2O5), niobia (Nb2O5), zirconia (ZrO2) and titania (TiO2) in accordance to their roughness and wettability. Therefore, four kinds of metal oxide nanoporous and nanotubular Ta2O5, Nb2O5, ZrO2 and TiO2 were fabricated via anodization. The nanosize distribution, morphology and the physical and chemical properties of the nanolayers and their surface energies and bioactivities were investigated using SEM-EDS, X-ray diffraction (XRD) analysis and 3D profilometer. It was found that the nanoporous Ta2O5 exhibited an irregular porous structure, high roughness and high surface energy as compared to bare tantalum metal; and exhibited the most superior bioactivity after annealing among the four kinds of nanoporous structures. The nanoporous Nb2O5 showed a uniform porous structure and low roughness, but no bioactivity before annealing. Overall, the nanoporous and nanotubular layers of Ta2O5, Nb2O5, ZrO2 and TiO2 demonstrated promising potential for enhanced bioactivity to improve their biomedical application alone or to improve the usage in other biocompatible metal implants. PMID:25837724

Three anatomical levels: possibilities to decrease invasiveness of reconstructive surgery for congenital penile curvature.

PubMed

Perdzyński, Wojciech; Adamek, Marek

2017-01-01

The aim of the study was to report methods - based on penile anatomy - leading to the minimization in the invasiveness of reconstructive surgery for congenital penile curvature (CPC). From 2006 to 2016 authors operated on 186 adult men with CPC.To avoid degloving, the authors used the longitudinal skin and tunica dartos incision. For decreasing invasiveness to the dorsal neurovascular bundle (NVB), the authors separated it only locally in the shape of a triangle or a trapezium, elevating it only over the place of the tunical reconstruction. To decrease the invasiveness for the tunica albuginea (TA) and cavernous vessels, a new operative technique based on the stratified structure of the TA was developed in which the corpora cavernosa were not opened. During reconstruction, only the elliptical fragment of the external layer of the tunica was excised (internal layer was left intact) and both layers of the tunica were sutured over the invaginated internal layer. Follow-up ranged from 6 months to 10 years. In all the patients, the penis was straightened during operation. Follow-up examinations were done 6 months and 1 year postoperatively. Disorders of superficial sensation on the glans, erectile dysfunction or chronic postoperative edema were not detected in any of the 186 patients. The penis remained straight in 180 patients (96.7%). In 4 patients (2.2%) in whom the primary curvature was 80-90 degrees and the postoperative curvature was about 30 degrees, reoperation was done. In two patients (1.1%) with the remaining postoperative curvature up to 20 degrees and good functional result (patient's opinion), there was no need for further treatment. Longitudinal skin and tunica dartos incision on the convex surface of the penis allows for the ability to avoid penile degloving and to preserve the foreskin. Elevation of the dorsal NVB from the TA was done on a very limited surface in the shape of triangle or trapezium, in order to decrease the possibility of dorsal nerves/vessels damage. Excision of elliptical fragments of the external layer of the TA with subsequent invagination of the internal layer, excluded the need for opening of the corpora cavernosa as well as for the use of a tourniquet during reconstruction. This diminished the potential risk of complications, especially intra- and postoperative bleeding.

Structure and mechanical properties of coatings fabricated by nonvacuum electron beam cladding of Ti-Ta-Zr powder mixtures

NASA Astrophysics Data System (ADS)

Samoylenko, Vitaliy V.; Lenivtseva, Olga G.; Polyakov, Igor A.; Laptev, Ilya S.

2015-10-01

In this paper structural investigations and mechanical tests of Ti-Ta-Zr coatings obtained on surfaces of cp-titanium workpieces were carried out. It was found that the coatings had a dendrite structure; investigations at high-power magnifications revealed a platelet structure. An increase of tantalum concentration led to refinement of structural components. The microhardness level of all coatings, excepting a specimen with the maximum tantalum content, was 370 HV. The microhardness of this coating reached 400 HV. The ultimate tensile strength of cladded layers varied from 697 to 947 MPa. Adhesion tests showed that bimetallic composites were characterized by high bond strength of cladded layers to the substrate, which exceeded cp-titanium strength characteristics.

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE PAGES

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; ...

2016-09-09

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

Laser Spectroscopy and AB Initio Calculations on the TaF Molecule

NASA Astrophysics Data System (ADS)

Ng, Kiu Fung; Zou, Wenli; Liu, Wenjian; Cheung, Allan S. C.

2016-06-01

Electronic transition spectrum of the tantalum monoflouride (TaF) molecule in the spectral region between 448 and 520 nm has been studied using the technique of laser-ablation/reaction free jet expansion and laser induced fluorescence spectroscopy. TaF molecule was produced by reacting laser-ablated tantalum atoms with sulfur hexafluoride gas seeded in argon. Sixteen vibrational bands with resolved rotational structure have been recorded and analyzed, which were organized into six electronic transition systems and the ground state has been identified to be the X3Σ-(0+) state with bond length, ro, and equilibrium vibrational frequency, ωe, determined to be 1.8209 Å and 700.1 wn respectively. In addition, four vibrational bands belong to another transition system involving lower state with Ω = 2 component has also been analyzed. All observed transitions are with ΔΩ = 0. Least-squares fit of the measured line positions yielded molecular constants for the electronic states involved. The Λ-S and Ω states of TaF were calculated at the state-averaged complete active space self-consistent field (SA-CASSCF) and the subsequent internally contracted multi-reference configuration interaction with singles and doubles and Davidson's cluster correction (MRCISD+Q) levels of theory with the active space of 4 electrons in 6 orbitals, that is, the molecular orbitals corresponding to Ta 5d6s are active. The spin-orbit coupling (SOC) is calculated by the state-interaction approach at the SA-CASSCF level via the relativistic effective core potentials (RECPs) spin-orbit operator, where the diagonal elements of the spin-orbit matrix are replaced by the above MRCISD+Q energies. The spectroscopic properties of the ground and many low-lying electronic states of the TaF molecule will be reported. With respect to the observed electronic states in this work, the calculated results are in good agreement with our experimental determinations. This work represents the first experimental investigation of the molecular structure of the TaF molecule.

Considering causal genes in the genetic dissection of kernel traits in common wheat.

PubMed

Mohler, Volker; Albrecht, Theresa; Castell, Adelheid; Diethelm, Manuela; Schweizer, Günther; Hartl, Lorenz

2016-11-01

Genetic factors controlling thousand-kernel weight (TKW) were characterized for their association with other seed traits, including kernel width, kernel length, ratio of kernel width to kernel length (KW/KL), kernel area, and spike number per m 2 (SN). For this purpose, a genetic map was established utilizing a doubled haploid population derived from a cross between German winter wheat cultivars Pamier and Format. Association studies in a diversity panel of elite cultivars supplemented genetic analysis of kernel traits. In both populations, genomic signatures of 13 candidate genes for TKW and kernel size were analyzed. Major quantitative trait loci (QTL) for TKW were identified on chromosomes 1B, 2A, 2D, and 4D, and their locations coincided with major QTL for kernel size traits, supporting the common belief that TKW is a function of other kernel traits. The QTL on chromosome 2A was associated with TKW candidate gene TaCwi-A1 and the QTL on chromosome 4D was associated with dwarfing gene Rht-D1. A minor QTL for TKW on chromosome 6B coincided with TaGW2-6B. The QTL for kernel dimensions that did not affect TKW were detected on eight chromosomes. A major QTL for KW/KL located at the distal tip of chromosome arm 5AS is being reported for the first time. TaSus1-7A and TaSAP-A1, closely linked to each other on chromosome 7A, could be related to a minor QTL for KW/KL. Genetic analysis of SN confirmed its negative correlation with TKW in this cross. In the diversity panel, TaSus1-7A was associated with TKW. Compared to the Pamier/Format bi-parental population where TaCwi-A1a was associated with higher TKW, the same allele reduced grain yield in the diversity panel, suggesting opposite effects of TaCwi-A1 on these two traits.

Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

NASA Astrophysics Data System (ADS)

Ang, R.; Miyata, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Takahashi, T.

2013-09-01

We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications

NASA Astrophysics Data System (ADS)

Wang, I.-Ting; Chang, Chih-Cheng; Chiu, Li-Wen; Chou, Teyuh; Hou, Tuo-Hung

2016-09-01

The implementation of highly anticipated hardware neural networks (HNNs) hinges largely on the successful development of a low-power, high-density, and reliable analog electronic synaptic array. In this study, we demonstrate a two-layer Ta/TaO x /TiO2/Ti cross-point synaptic array that emulates the high-density three-dimensional network architecture of human brains. Excellent uniformity and reproducibility among intralayer and interlayer cells were realized. Moreover, at least 50 analog synaptic weight states could be precisely controlled with minimal drifting during a cycling endurance test of 5000 training pulses at an operating voltage of 3 V. We also propose a new state-independent bipolar-pulse-training scheme to improve the linearity of weight updates. The improved linearity considerably enhances the fault tolerance of HNNs, thus improving the training accuracy.

Superconducting wire manufactured

NASA Astrophysics Data System (ADS)

Fu, Yuexian; Sun, Yue; Xu, Shiming; Peng, Ying

1985-10-01

The MF Nb/Cu Extrusion Tube Method was used to manufacture 3 kg of stable practical MF Nb2Sn composite superconducting wire containing pure Cu(RRR approx. 200)/Ta. The draw state composite wire diameter was 0.56 mm, it contained 11,448 x 2.6 micron Nb core, and the twist distance was 1.5 cm. The composite wire cross-section was pure Cu/Ta/11,448 Nb core/Cu/ 91Sn-Cu; containing 22.8 v. % pure Cu, 13.3 v. % Ta; within the Ta layer to prevent Sn diffusion. The wire was sheathed in nonalkaline glass fiber as an insulating layer. A section of wire weighing 160 g was cut off and coiled it into a small solenoid. After reaction diffusion processing at 675 C/30 and curing by vacuum dipping in paraffin, it was measured in a Nb-Ti backfield of 7.2 T intensity, a current of 129 A was passed through the Nb3Sn solenoid and produced a strength of 2.5 T, the overall magnetic field intensity of the composite magnet reached 9.7 T. At this time, the wire full current density J sub c.w. = 5.2 x 10 to the 4th power A/sq cm; the effective current density J sub c (Nb + Sn - Cu) = 8.2 x 10 to the 4th power A/sq cm.

Comparative Study of MIL-96(Al) as Continuous Metal-Organic Frameworks Layer and Mixed-Matrix Membrane.

PubMed

Knebel, Alexander; Friebe, Sebastian; Bigall, Nadja Carola; Benzaqui, Marvin; Serre, Christian; Caro, Jürgen

2016-03-23

MIL-96(Al) layers were prepared as supported metal-organic frameworks membrane via reactive seeding using the α-alumina support as the Al source for the formation of the MIL-96(Al) seeds. Depending on the solvent mixture employed during seed formation, two different crystal morphologies, with different orientation of the transport-active channels, have been formed. This crystal orientation and habit is predefined by the seed crystals and is kept in the subsequent growth of the seeds to continuous layers. In the gas separation of an equimolar H2/CO2 mixture, the hydrogen permeability of the two supported MIL-96(Al) layers was found to be highly dependent on the crystal morphology and the accompanied channel orientation in the layer. In addition to the neat supported MIL-96(Al) membrane layers, mixed-matrix membranes (MMMs, 10 wt % filler loading) as a composite of MIL-96(Al) particles as filler in a continuous Matrimid polymer phase have been prepared. Five particle sizes of MIL-96(Al) between 3.2 μm and 55 nm were synthesized. In the preparation of the MIL-96(Al)/Matrimid MMM (10 wt % filler loading), the following preparation problems have been identified: The bigger micrometer-sized MIL-96(Al) crystals show a trend toward sedimentation during casting of the MMM, whereas for nanoparticles aggregation and recrystallization to micrometer-sized MIL-96(Al) crystals has been observed. Because of these preparation problems for MMM, the neat supported MIL-96(Al) layers show a relatively high H2/CO2 selectivity (≈9) and a hydrogen permeance approximately 2 magnitudes higher than that of the best MMM.

Smooth muscle cell seeding of decellularized scaffolds: the importance of bioreactor preconditioning to development of a more native architecture for tissue-engineered blood vessels.

PubMed

Yazdani, Saami K; Watts, Benjamin; Machingal, Masood; Jarajapu, Yagna P R; Van Dyke, Mark E; Christ, George J

2009-04-01

Vascular smooth muscle cells (VSMCs) impart important functional characteristics in the native artery and, therefore, should logically be incorporated in the development of tissue-engineered blood vessels. However, the native architecture and low porosity of naturally derived biomaterials (i.e., decellularized vessels) have impeded efforts to seed and incorporate a VSMC layer in tissue-engineered blood vessels. To this end, the goal of this study was to develop improved methods for seeding, proliferation, and maturation of VSMCs on decellularized porcine carotid arteries. Decellularized vessels were prepared in the absence and presence of the adventitial layer, and statically seeded with a pipette containing a suspension of rat aortic VSMCs. After cell seeding, recellularized engineered vessels were placed in a custom bioreactor system for 1-2 weeks to enhance cellular proliferation, alignment, and maturation. Initial attachment of VSMCs was dramatically enhanced by removing the adventitial layer of the decellularized porcine artery. Moreover, cyclic bioreactor conditioning (i.e., flow and pressure) resulted in increased VSMC proliferation and accelerated formation of a muscularized medial layer in the absence of the adventitial layer during the first week of preconditioning. Fura-2-based digital imaging microscopy revealed marked and reproducible depolarization-induced calcium mobilization after bioreactor preconditioning in the absence, but not in the presence, of the adventitia. The major finding of this investigation is that bioreactor preconditioning accelerates the formation of a significant muscular layer on decellularized scaffolds, in particular on adventitia-denuded scaffolds. Further, the VSMC layer of bioreactor-preconditioned vessels was capable of mobilizing calcium in response to cellular depolarization. These findings represent an important first step toward the development of tissue-engineered vascular grafts that more closely mimic native vasculature.

Convection and the seeding of the North Atlantic bloom

NASA Astrophysics Data System (ADS)

D'Asaro, Eric A.

Observations of vertical velocities in deep wintertime mixed layers using neutrally buoyant floats show that the convectively driven vertical velocities, roughly 1000 m per day, greatly exceed the sinking velocities of phytoplankton, 10 m or less per day. These velocities mix plankton effectively and uniformly across the convective layer and are therefore capable of returning those that have sunk to depth back into the euphotic zone. This mechanism cycles cells through the surface layer during the winter and provides a seed population for the spring bloom. A simple model of this mechanism applied to immortal phytoplankton in the subpolar Labrador Sea predicts that the seed population in early spring will be a few percent of the fall concentration if the plankton sink more slowly than the mean rate at which the surface well-mixed layer grows over the winter. Plankton that sink faster than this will mostly sink into the abyss with only a minute fraction remaining by spring. The shallower mixed layers of mid-latitudes are predicted to be much less effective at maintaining a seed population over the winter, limiting the ability of rapidly sinking cells to survive the winter.

Heusler alloys with bcc tungsten seed layers for GMR junctions

NASA Astrophysics Data System (ADS)

Frost, William; Hirohata, Atsufumi

2018-05-01

We demonstrate that polycrystalline Co2FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 °C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co2FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.

Thermal stability and specular reflection behaviour of CoNbZr-based bottom spin valves with nano-oxide layer

NASA Astrophysics Data System (ADS)

Kim, Jong Soo; Lee, Seong-Rae

2004-06-01

The thermal stability and specularity aspects of a CoNbZr-based bottom spin valve (SV) employing a nano-oxide layer (NOL) were investigated. The magnetoresistance (MR) ratio of the as-deposited CoNbZr-based bottom SV increased by 62% (from 6.3 to 10.2%) with incorporation of the NOL. The enhancement of the MR ratio was considered to be due to the specular effect ( increased from 0.722 to 1.363 cm) of the NOL. The MR ratio of a Ta-based bottom SV decreased by about 45% (from 6.9 to 3.8%) when the samples were annealed at 300 °C for 240 min. By contrast, the MR ratio of the CoNbZr-based bottom SV with NOL increase d by 14 % (from 10.2 to 11.7%). The root mean square roughness value of the CoNbZr layer (0.07 nm) was superior to that of the Ta layer (0.43 nm). Although Mn in IrMn diffused out to the surface through the active layers resulting in the formation of Mn oxide at the surface in the CoNbZr-based bottom SV, no trace of Mn was found in the active layers and no significant degradation occurred.

Fabrication of dye-sensitized solar cell (DSSC) using annato seeds (Bixa orellana Linn)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haryanto, Ditia Allindira; Landuma, Suarni; Purwanto, Agus

2014-02-24

The Fabrication of dye sensitized solar cell (DSSC) using Annato seeds has been conducted in this study. Annato seeds (Bixa orellana Linn) used as a sensitizer for dye sensitized solar cell. The experimental parameter was concentration of natural dye. Annato seeds was extracted using etanol solution and the concentration was controlled by varying mass of Annato seeds. A semiconductor TiO{sub 2} was prepared by a screen printing method for coating glass use paste of TiO{sub 2}. Construction DSSC used layered systems (sandwich) consists of working electrode (TiO{sub 2} semiconductor-dye) and counter electrode (platina). Both are placed on conductive glass andmore » electrolytes that occur electrons cycle. The characterization of thin layer of TiO{sub 2} was conducted using SEM (Scanning Electron Microscpy) analysis showed the surface morphology of TiO{sub 2} thin layer and the cross section of a thin layer of TiO{sub 2} with a thickness of 15–19 μm. Characterization of natural dye extract was determined using UV-Vis spectrometry analysis shows the wavelength range annato seeds is 328–515 nm, and the voltage (V{sub oc}) and electric current (I{sub sc}) resulted in keithley test for 30 gram, 40 gram, and 50 gram were 0,4000 V; 0,4251 V; 0,4502 V and 0,000074 A; 0,000458 A; 0,000857 A, respectively. The efficiencies of the fabricated solar cells using annato seeds as senstizer for each varying mass are 0,00799%, 0,01237%, and 0,05696%.« less

Structure and Microhardness of Cu-Ta Joints Produced by Explosive Welding

PubMed Central

Maliutina, Iu. N.; Mali, V. I.; Bataev, I. A.; Bataev, A. A.; Esikov, M. A.; Smirnov, A. I.; Skorokhod, K. A.

2013-01-01

The structure and microhardness of Cu-Ta joints produced by explosive welding were studied. It was found that, during explosive welding, an intermediate layer 20⋯40 μm thick with a finely dispersed heterophase structure, formed between the welded copper and tantalum plates. The structure of the layer was studied by scanning and transmission electron microscopy. Microvolumes with tantalum particles distributed in a copper matrix and microvolumes of copper particles in a tantalum matrix were detected. The tantalum particles in copper have a size of 5⋯500 nm, with a predominance of 5⋯50 nm particles. A mechanism for the formation of the finely dispersed heterophase structure in explosive welding is proposed. The microhardness of interlayers with the heterophase structure reaches 280 HV, which far exceeds the microhardness of copper (~130 HV) and tantalum (~160 HV). Many twins of deformation origin were found in the structure of the copper plate. The effect of heating temperature in the range from 100 to 900°C on the microhardness of copper, tantalum, and the Cu-Ta welded joint was studied. Upon heating to 900°C, the microhardness of the intermediate layer decreases from 280 to 150 HV. The reduction in the strength properties of the weld material is mainly due to structural transformations in copper. PMID:24453818

Genome-wide exploration of metal tolerance protein (MTP) genes in common wheat (Triticum aestivum): insights into metal homeostasis and biofortification.

PubMed

Vatansever, Recep; Filiz, Ertugrul; Eroglu, Seckin

2017-04-01

Metal transport process in plants is a determinant of quality and quantity of the harvest. Although it is among the most important of staple crops, knowledge about genes that encode for membrane-bound metal transporters is scarce in wheat. Metal tolerance proteins (MTPs) are involved in trace metal homeostasis at the sub-cellular level, usually by providing metal efflux out of the cytosol. Here, by using various bioinformatics approaches, genes that encode for MTPs in the hexaploid wheat genome (Triticum aestivum, abbreviated as Ta) were identified and characterized. Based on the comparison with known rice MTPs, the wheat genome contained 20 MTP sequences; named as TaMTP1-8A, B and D. All TaMTPs contained a cation diffusion facilitator (CDF) family domain and most members harbored a zinc transporter dimerization domain. Based on motif, phylogeny and alignment analysis, A, B and D genomes of TaMTP3-7 sequences demonstrated higher homology compared to TaMTP1, 2 and 8. With reference to their rice orthologs, TaMTP1s and TaMTP8s belonged to Zn-CDFs, TaMTP2s to Fe/Zn-CDFs and TaMTP3-7s to Mn-CDFs. Upstream regions of TaMTP genes included diverse cis-regulatory motifs, indicating regulation by developmental stage, tissue type and stresses. A scan of the coding sequences of 20 TaMTPs against published miRNAs predicted a total of 14 potential miRNAs, mainly targeting the members of most diverged groups. Expression analysis showed that several TaMTPs were temporally and spatially regulated during the developmental time-course. In grains, MTPs were preferentially expressed in the aleurone layer, which is known as a reservoir for high concentrations of iron and zinc. The work identified and characterized metal tolerance proteins in common wheat and revealed a potential involvement of MTPs in providing a sink for trace element storage in wheat grains.

A putative octopamine/tyramine receptor mediating appetite in a hungry fly

NASA Astrophysics Data System (ADS)

Ishida, Yuko; Ozaki, Mamiko

2011-07-01

In the blowfly Phormia regina, experience of simultaneous feeding with d-limonene exposure inhibits proboscis extension reflex (PER) due to decreased tyramine (TA) titer in the brain. To elucidate the molecular mechanism of TA signaling pathway related to the associated feeding behavior, we cloned cDNA encoding the octopamine/TA receptor (PregOAR/TAR). The deduced protein is composed of 607 amino acid residues and has 7 predicted transmembrane domains. Based on homology and phylogenetic analyses, this protein belongs to the OAR/TAR family. The PregOAR/TAR was mainly expressed in head, with low levels of expression in other tissues at adult stages. Gene expression profile is in agreement with a plethora of functions ascribed to TA in various insect tissues. The immunolabeled cell bodies and processes were localized in the medial protocerebrum, outer layer of lobula, antennal lobe, and subesophageal ganglion. These results suggest that decrease of TA level in the brain likely affects neurons expressing PregOAR/TAR, causing mediation of the sensitivity in the sensillum and/or output of motor neurons for PER.

Raman Signatures of Broken Inversion Symmetry and In-Plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4.

PubMed

Liu, Yinan; Gu, Qiangqiang; Peng, Yu; Qi, Shaomian; Zhang, Na; Zhang, Yinong; Ma, Xiumei; Zhu, Rui; Tong, Lianming; Feng, Ji; Liu, Zheng; Chen, Jian-Hao

2018-05-07

The layered ternary compound TaIrTe 4 is an important candidate to host the recently predicted type-II Weyl fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe 4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe 4 crystals is demonstrated. Such technique could be extended to the fast identification and characterization of other type-II Weyl fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe 4 thin flakes is also revealed, up to 200% at 10 K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tuning the surface morphology of aluminium doped zinc oxide thin films by arrayed nanorods through chemical growth process

NASA Astrophysics Data System (ADS)

Devasia, Sebin; Anila, E. I.

2018-04-01

Here we report the growth and characterization of chemically grown aluminium doped zinc oxide nanorods on seed layers. The seed layers were prepared by chemical spray pyrolysis which acted as the growth centers. The growth duration of nanorods were varied from 3h to 12h in steps of 3h. Further, investigations on their structural, morphological, electrical and optical properties. The SEM images confirmed the hexagonal shaped nanorod arrays grown on the seed layers. Later, the x-ray diffraction measurements revealed the pure zinc oxide phase of the samples. Photoluminescence and photoconductivity studies were carried out to analyze the potential of its optoelectronic properties.

Barrier layer for a MCrAlY basecoat superalloy combination

DOEpatents

Sabol, Stephen M.; Goedjen, John G.; Vance, Steven J.

2001-01-01

A turbine component contains a substrate (22) such as a superalloy, a basecoat (24) of the type MCrAlY, and a continuous barrier layer (28) between the substrate and basecoat, where the barrier layer (28) is made of an alloy of (Re, Ta, Ru, Os)X, where X can be Ni, Co or their mixture, where the barrier layer is at least 2 micrometers thick and substantially prevents materials from both the basecoat and substrate from migrating through it.

Expression analysis of a heat-inducible, Myo-inositol-1-phosphate synthase (MIPS) gene from wheat and the alternatively spliced variants of rice and Arabidopsis.

PubMed

Khurana, Neetika; Chauhan, Harsh; Khurana, Paramjit

2012-01-01

Molecular dissection and a deeper analysis of the heat stress response mechanism in wheat have been poorly understood so far. This study delves into the molecular basis of action of TaMIPS, a heat stress-inducible enzyme that was identified through PCR-select subtraction technology, which is named here as TaMIPS2. MIPS (L-Myo-inositol-phosphate synthase) is important for the normal growth and development in plants. Expression profiling showed that TaMIPS2 is expressed during different developing seed stages upon heat stress. Also, the transcript levels increase in unfertilized ovaries and significant amounts are present during the recovery period providing evidence that MIPS is crucial for its role in heat stress recovery and flower development. Alternatively spliced forms from rice and Arabidopsis were also identified and their expression analysis revealed that apart from heat stress, some of the spliced variants were also inducible by drought, NaCl, Cold, ABA, BR, SA and mannitol. In silico promoter analysis revealed various cis-elements that could contribute for the differential regulation of MIPS in different plant systems. Phylogenetic analysis indicated that MIPS are highly conserved among monocots and dicots and TaMIPS2 grouped specifically with monocots. Comparative analyses was undertaken by different experimental approaches, i.e., semi-quantitative RT-PCR, quantitative RT-PCR, Genevestigator as a reference expression tool and motif analysis to predict the possible function of TaMIPS2 in regulating the different aspects of plant development under abiotic stress in wheat.

Processing and characterization of zeta-Ta4C 3-x: A high toughness tantalum carbide

NASA Astrophysics Data System (ADS)

Sygnatowicz, Michael M.

Tantalum carbides are commonly processed by hot-pressing, canned hot-isostatic-pressing, or spark-plasma sintering because of their high melting temperatures and low diffusivities. This study reports processing of dense ζ-Ta4C 3-x by reaction sintering of a Ta and TaC powder mixture (C/Ta atomic ratio = 0.66). ζ-Ta4C3-x is of interest due to its rhombohedral (trigonal) crystal structure that may be characterized as a polytype with both face-centered-cubic (fcc) and hexagonal-close-packed (hcp) Ta stacking sequences interrupted by stacking faults and missing carbon layers. This structure leads to easy cleaving on the basal planes and high fracture toughness. A key step in processing is the hydrogenation of the Ta powder to produce beta-TaH x, a hard and brittle phase that enables efficient comminution during milling and production of small, equiaxed Ta particles that can be packed to high green density with the TaC powder. Studies of phase evolution by quantitative X-ray diffraction during sintering revealed several intermediate reactions: (a) decomposition of beta-TaHx to Ta, (b) diffusion of C from gamma-TaC to Ta leading to the formation of α-Ta2Cy' with the kinetics described by the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation with an exponent, n = 0.5, and an activation energy of 221 kJ/mole, (c) equilibration of α-Ta2Cy' and gamma-TaC 0.78 phases, and (d) formation of ζ-Ta4C2.56 from the equilibrated α-Ta2C and gamma-TaC0.78 phases with the kinetics characterized by a higher JMAK exponent ( n ≈ 3) and higher activation energy (1089 kJ/mole). The microstructure showed evidence of nucleation and growth of the ζ-Ta4C 2.56 phase in both the α-Ta2C and gamma-TaC0.78 parent phases with distinct difference in the morphology due to the different number of variants of the habit plane. A hot-pressed and hot-isostatic-pressed (HIPed) material (C/Ta atomic ratio = 0.66), having formed 95 w% ζ-phase, attained a fracture toughness of 15.6 +/- 0.5 MPa√m and a fracture strength of 508 +/- 97 MPa, while a pressureless sintered and HIPed counterpart, having formed 89 w% ζ-phase and 11 w% gamma-TaC0.78, attained a fracture toughness of 13.7 +/- 0.3 MPa√m and a fracture strength of 679 +/- 56 MPa. All ζ-phase containing materials showed rising R-curves. The high fracture toughness and rising R-curve were attributed to ligament bridging across the crack face. The ligaments, called lamella, were formed as a result of weak cleavage planes in the basal plane of the ζ-Ta4C 3-x crystal.

High-Entropy Metal Diborides: A New Class of High-Entropy Materials and a New Type of Ultrahigh Temperature Ceramics

NASA Astrophysics Data System (ADS)

Gild, Joshua; Zhang, Yuanyao; Harrington, Tyler; Jiang, Sicong; Hu, Tao; Quinn, Matthew C.; Mellor, William M.; Zhou, Naixie; Vecchio, Kenneth; Luo, Jian

2016-11-01

Seven equimolar, five-component, metal diborides were fabricated via high-energy ball milling and spark plasma sintering. Six of them, including (Hf0.2Zr0.2Ta0.2Nb0.2Ti0.2)B2, (Hf0.2Zr0.2Ta0.2Mo0.2Ti0.2)B2, (Hf0.2Zr0.2Mo0.2Nb0.2Ti0.2)B2, (Hf0.2Mo0.2Ta0.2Nb0.2Ti0.2)B2, (Mo0.2Zr0.2Ta0.2Nb0.2Ti0.2)B2, and (Hf0.2Zr0.2Ta0.2Cr0.2Ti0.2)B2, possess virtually one solid-solution boride phase of the hexagonal AlB2 structure. Revised Hume-Rothery size-difference factors are used to rationalize the formation of high-entropy solid solutions in these metal diborides. Greater than 92% of the theoretical densities have been generally achieved with largely uniform compositions from nanoscale to microscale. Aberration-corrected scanning transmission electron microscopy (AC STEM), with high-angle annular dark-field and annular bright-field (HAADF and ABF) imaging and nanoscale compositional mapping, has been conducted to confirm the formation of 2-D high-entropy metal layers, separated by rigid 2-D boron nets, without any detectable layered segregation along the c-axis. These materials represent a new type of ultra-high temperature ceramics (UHTCs) as well as a new class of high-entropy materials, which not only exemplify the first high-entropy non-oxide ceramics (borides) fabricated but also possess a unique non-cubic (hexagonal) and layered (quasi-2D) high-entropy crystal structure that markedly differs from all those reported in prior studies. Initial property assessments show that both the hardness and the oxidation resistance of these high-entropy metal diborides are generally higher/better than the average performances of five individual metal diborides made by identical fabrication processing.

Atomic layer deposited high-k nanolaminate capacitors

NASA Astrophysics Data System (ADS)

Smith, S. W.; McAuliffe, K. G.; Conley, J. F., Jr.

2010-10-01

Al 2O 3-Ta 2O 5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a varying number of Al 2O 3/Ta 2O 5 bilayers. The composition of the films was roughly 57% Al 2O 3 and 43% Ta 2O 5 and the total film thickness was held at ˜58 nm, while the number of bilayers was varied from 3 to 192 by changing the target bilayer thickness from ˜19.2 nm to ˜0.3 nm. Varying the number of bilayers was found to impact electrical properties. Although, almost all laminate films exhibited leakage, breakdown, hysteresis, and overall dielectric constant intermediate between pure Al 2O 3 and Ta 2O 5 films, laminates with few bilayers exhibited leakage current density lower than Al 2O 3 over the range of ˜3.5-4.5 MV/cm. Select samples annealed at temperatures from 400 to 900 °C were compared with as-deposited laminates. Annealing the laminate films at low temperatures improved leakage and breakdown while higher temperature anneals degraded both leakage and breakdown but improved the effective dielectric constant. A figure of merit was used to evaluate the overall ability of the various films to store charge. It was found that the few bilayer laminates were ranked higher than the many bilayer laminates as well as above both the pure Ta 2O 5 and pure Al 2O 3 films. These results indicate that even for a fixed overall composition, the electrical properties of a nanolaminate can be adjusted by varying the number of bilayers.

Switchable and tunable film bulk acoustic resonator fabricated using barium strontium titanate active layer and Ta{sub 2}O{sub 5}/SiO{sub 2} acoustic reflector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sbrockey, N. M., E-mail: sbrockey@structuredmaterials.com; Tompa, G. S.; Kalkur, T. S.

2016-08-01

A solidly mounted acoustic resonator was fabricated using a Ba{sub 0.60}Sr{sub 0.40}TiO{sub 3} (BST) film deposited by metal organic chemical vapor deposition. The device was acoustically isolated from the substrate using a Bragg reflector consisting of three pairs of Ta{sub 2}O{sub 5}/SiO{sub 2} layers deposited by chemical solution deposition. Transmission electron microscopy verified that the Bragg reflector was not affected by the high temperatures and oxidizing conditions necessary to process high quality BST films. Electrical characterization of the resonator demonstrated a quality factor (Q) of 320 and an electromechanical coupling coefficient (K{sub t}{sup 2}) of 7.0% at 11 V.

Space Exposed Experiment Developed for Students (SEEDS) P-0004-2

NASA Technical Reports Server (NTRS)

Grigsby, Doris K.

1991-01-01

This cooperative endeavor of NASA Headquarters, the NASA Langley Research Center, and the George W. Park Seed Company, resulted in the distribution, by the end of March, 1990, of approximately 132,000 space exposed experiment developed for students (SEEDS) kits to 64,000 teachers representing 40,000 classrooms and 3.3 million kindergarden through university students. Kits were sent to every state, as well as to 30 foreign countries. Preliminary radiation data indicates that layer A received 725 rads, while layer D received 350 rads. Germination rate was reported to be 73.8 percent for space exposed seeds and 70.3 percent for earth based control seeds. Tests conducted within the first six months after retrieval indicated space exposed seeds germinated in an average of 8.0 days, while earth based control seeds' average germination rate was 8.3 days. Some mutations (assumed to be radiation induced) reported by students and Park Seed include plants that added a leaf instead of the usual flower at the end of the flower front and fruit produced from a flower with a variegated calyx bore seeds producing albino plants, while fruit from a flower with a green calyx from the same plant bore seeds produced green plants.

Study of irradiation damage induced by He2+ ion irradiation in Ni62Ta38 metallic glass and W metal

NASA Astrophysics Data System (ADS)

Zhang, Xiaonan; Mei, Xianxiu; Zhang, Qi; Li, Xiaona; Wang, Yingmin; Wang, Younian

2017-09-01

Metallic glasses are considered to possess good resistant against irradiation due to their inherent structural long-range disorder and a lack of grain boundaries. The He2+ with an energy of 300 keV was used to irradiate Ni62Ta38 binary metallic glass to investigate its resistance against the irradiation, and the irradiated behaviour of the metallic glass was compared with that of W metal. The irradiation fluence range over 2.0 × 1017 ions/cm2-1.6 × 1018 ions/cm2. The TEM results show that nanocrystals of μ-NiTa phase and Ni2Ta phase appeared in Ni62Ta38 metallic glass under the irradiation fluence of 1.6 × 1018 ions/cm2. The SEM results show that the surfaces of Ni62Ta38 metallic glasses maintained flat and smooth, whereas a large area of blisters with peeling formed on the surface of W metal at the irradiation fluence of 1.0 × 1018 ions/cm2. It indicates that the critical irradiation fluence of surface breakage of the Ni62Ta38 metallic glass is higher than that of W metal. After the irradiation, stress was generated in the surface layer of W metal, leading to the increase of the hardness of W metal.

Hydrometallurgical Separation of Niobium and Tantalum: A Fundamental Approach

NASA Astrophysics Data System (ADS)

Nete, Motlalepula; Purcell, Walter; Nel, Johann T.

2016-02-01

A mixture of pure Ta2O5 and Nb2O5 was dissolved using two different fluxes, namely NH4F·HF and Na2HPO4/NaH2PO4·H2O. Selective precipitation and ion exchange were used as separation techniques. Selective precipitation using p-phenylediamine in a fluoride matrix resulted in the isolation of 73(3)% tantalum accompanied by 23(5)% niobium. A separation factor of 11(4) was obtained. A single solvent extraction step using methyl-isobutyl ketone at a 4 M H2SO4 yielded excellent Ta and Nb separation in the fluoride solution with 80% of the Ta and only 2% Nb recovered in the organic layer. A two-step extraction recovered 100% Ta at 0.5-4 M H2SO4 with a separation factor of ~2000. A study of the extraction mechanism indicated that the stability of the protonated compounds such as H2TaF7/H2NbOF5 is in the extraction and separation determining steps in this process. A K' (double de-protonated constant) of approximately 0.2 was calculated for H2TaF7. Only 91.7% Nb and 73.4% Ta were recovered from anion separation using strong Amberlite resin and 96.1% Nb and 52.3% using the weak Dowex Marathon resin from fluoride dissolution.

On the Impact of Injection Schemes on Transition in Hypersonic Boundary Layers

DTIC Science & Technology

2009-10-13

e (1 − r ) – CpTw] [1] where r is the recovery factor. For...9.72 MJ/kg Reynolds number (Re x ) [-] S ta n to n n u m b e r (S t) [ -] experimental laminar Van Driest II White & Christoph Figure 4...h0 = 10.22 MJ/kg Reynolds number (Re x ) [-] S ta n to n n u m b e r (S t) [ -] experimental laminar Van Driest II White & Christoph 10 6 10

Love-Wave Biosensors Using Cross-Linked Polymer Waveguides on LiTaO{sub 3} Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

BENDER,FLORIAN; CERNOSEK,RICHARD W.; JOSSE,F.

The design and performance of Love-wave sensors using cross-linked poly-(methyl methacrylate) waveguides of thickness of 0.3--3.2 {micro}m on LiTaO{sub 3} substrates are described. It is found that this layer-substrate combination provides sufficient waveguidance, and electrical isolation of the IDTs from the liquid environment to achieve low acoustic loss and distortion. In bio-sensing experiments, mass sensitivity up to 1,420 Hz/(ng/mm{sup 2}) is demonstrated.

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 2 2012-01-01 2012-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1842 - Product description of Layer or (Cluster) raisins with seeds.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Product description of Layer or (Cluster) raisins with seeds. 52.1842 Section 52.1842 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 2 2011-01-01 2011-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Grades of raisins with seeds-except layer or cluster. 52.1852 Section 52.1852 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT O...

7 CFR 52.1851 - Sizes of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Sizes of raisins with seeds-layer or cluster. 52.1851 Section 52.1851 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1853 - Grades of raisins with seeds-layer or cluster.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 2 2013-01-01 2013-01-01 false Grades of raisins with seeds-layer or cluster. 52.1853 Section 52.1853 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF 1946...

7 CFR 52.1850 - Sizes of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 2 2014-01-01 2014-01-01 false Sizes of raisins with seeds-except layer or cluster. 52.1850 Section 52.1850 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE REGULATIONS AND STANDARDS UNDER THE AGRICULTURAL MARKETING ACT OF...

Electrochemical studies of Copper, Tantalum and Tantalum Nitride surfaces in aqueous solutions for applications in chemical-mechanical and electrochemical-mechanical planarization

NASA Astrophysics Data System (ADS)

Sulyma, Christopher Michael

This report will investigate fundamental properties of materials involved in integrated circuit (IC) manufacturing. Individual materials (one at a time) are studied in different electrochemical environmental solutions to better understand the kinetics associated with the polishing process. Each system tries to simulate a real CMP environment in order to compare our findings with what is currently used in industry. To accomplish this, a variety of techniques are used. The voltage pulse modulation technique is useful for electrochemical processing of metal and alloy surfaces by utilizing faradaic reactions like electrodeposition and electrodissolution. A theoretical framework is presented in chapter 4 to facilitate quantitative analysis of experimental data (current transients) obtained in this approach. A typical application of this analysis is demonstrated for an experimental system involving electrochemical removal of copper surface layers, a relatively new process for abrasive-free electrochemical mechanical planarization of copper lines used in the fabrication of integrated circuits. Voltage pulse modulated electrodissolution of Cu in the absence of mechanical polishing is activated in an acidic solution of oxalic acid and hydrogen peroxide. The current generated by each applied voltage step shows a sharp spike, followed by a double-exponential decay, and eventually attains the rectangular shape of the potential pulses. For the second system in chapter 5, open-circuit potential measurements, cyclic voltammetry and Fourier transform impedance spectroscopy have been used to study pH dependent surface reactions of Cu and Ta rotating disc electrodes (RDEs) in aqueous solutions of succinic acid (SA, a complexing agent), hydrogen peroxide (an oxidizer), and ammonium dodecyl sulfate (ADS, a corrosion inhibitor for Cu). The surface chemistries of these systems are relevant for the development of a single-slurry approach to chemical mechanical planarization (CMP) of Cu lines and Ta barriers in the fabrication of semiconductor devices. It is shown that in non-alkaline solutions of H2O2, the SA-promoted surface complexes of Cu and Ta can potentially support chemically enhanced material removal in low-pressure CMP of surface topographies overlying fragile low-k dielectrics. ADS can suppress Cu dissolution without significantly affecting the surface chemistry of Ta. Chapter 6 discusses anodic corrosion of Ta, which is examined as a possible route to voltage induced removal of Ta for potential applications in electrochemical mechanical planarization (ECMP) of diffusion barriers. This strategy involves electro-oxidation of Ta in the presence of NO3- anions to form mechanically weak surface oxide films, followed by removal of the oxide layers by moderate mechanical abrasion. This NO3 - system is compared with a reference solution of Br -. In both electrolytes, the voltammetric currents of anodic oxidation exhibit oscillatory behaviors in the initial cycles of slow (5 mV s-1) voltage scans. The frequencies of these current oscillations are show signature attributes of localized pitting or general surface corrosion caused by Br- or NO3 -, respectively. Scanning electron microscopy, cyclic voltammetry, polarization resistance measurements, and time resolved Fourier transform impedance spectroscopy provide additional details about these corrosion mechanism. Apart from their relevance in the context of ECMP, the results also address certain fundamental aspects of pitting and general corrosions. The general protocols necessary to combine and analyze the results of D.C. and A.C. electrochemical measurements involving such valve metal corrosion systems are discussed in detail. In chapter 7 potassium salts of certain oxyanions (nitrate, sulfate and phosphate in particular) are shown to serve as effective surface-modifying agents in chemically enhanced, low-pressure chemical mechanical planarization (CMP) of Ta and TaN barrier layers for interconnect structures. The surface reactions that form the basis of this CMP strategy are investigated here in detail using the electrochemical techniques of cyclic voltammetry, open circuit potential analysis, polarization resistance measurements, and Fourier transform impedance spectroscopy. The results suggest that forming structurally weak oxide layers on the CMP samples is a key to achieving the goal of chemically controlled CMP of Ta/TaN at low down-pressures. (Abstract shortened by UMI.)

Mutagenicity of ω-3 fatty acid peroxidation products in the Ames test.

PubMed

Grúz, Petr; Shimizu, Masatomi; Sugiyama, Kei-Ichi; Honma, Masamitsu

2017-07-01

Polyunsaturated fatty acids (PUFA) represent one of the main building blocks of cellular membranes and their varying composition impacts lifespan as well as susceptibility to cancer and other degenerative diseases. Increased intake of ω-3 PUFA is taught to compensate for the abundance of ω-6 PUFA in modern human diet and prevent cardiocirculatory diseases. However, highly unsaturated PUFA of marine and seed origin easily oxidize to aldehydic products which form DNA adducts. With increased PUFA consumption it is prudent to re-evaluate ω-3 PUFA safety and the genotoxic hazards of their metabolites. We have used the standard Ames test to examine the mutagenicity of 2 hexenals derived from lipid peroxidation of the common ω-3 PUFA in human diet and tissues. Both 4-hydroxyhexenal and 2-hexenal derived from the ω-3 docosahexaenoic and α-linolenic acid, respectively, induced base substitutions in the TA104 and TA100 Ames strains in a dose dependent manner. Their mutagenicity was dependent on the Y-family DNA polymerase RI and they did not induce other types of mutations such as the -2 and -1 frameshifts in the TA98 and TA97 strains. Our results expand previous findings about the mutagenicity of related ω-3 peroxidation product 4-oxohexenal and raise alert that overuse of ω-3 rich oils may have adverse effect on genome stability. Copyright © 2017 Elsevier B.V. All rights reserved.

Germination and elongation of flax in microgravity

NASA Technical Reports Server (NTRS)

Levine, Howard G.; Anderson, Ken; Boody, April; Cox, Dave; Kuznetsov, Oleg A.; Hasenstein, Karl H.

2003-01-01

This experiment was conducted as part of a risk mitigation payload aboard the Space Shuttle Atlantis on STS-101. The objectives were to test a newly developed water delivery system, and to determine the optimal combination of water volume and substrate for the imbibition and germination of flax (Linum usitatissimum) seeds in space. Two different combinations of germination paper were tested for their ability to absorb, distribute, and retain water in microgravity. A single layer of thick germination paper was compared with one layer of thin germination paper under a layer of thick paper. Paper strips were cut to fit snugly into seed cassettes, and seeds were glued to them with the micropyle ends pointing outward. Water was delivered in small increments that traveled through the paper via capillary action. Three water delivery volumes were tested, with the largest (480 microliters) outperforming the 400 microliters and 320 microliters volumes for percent germination (90.6%) and root growth (mean=4.1 mm) during the 34-hour spaceflight experiment. The ground control experiment yielded similar results, but with lower rates of germination (84.4%) and shorter root lengths (mean=2.8 mm). It is not clear if the roots emerged more quickly in microgravity and/or grew faster than the ground controls. The single layer of thick germination paper generally exhibited better overall growth than the two layered option. Significant seed position effects were observed in both the flight and ground control experiments. Overall, the design of the water delivery system, seed cassettes and the germination paper strip concept was validated as an effective method for promoting seed germination and root growth under microgravity conditions. c2003 COSPAR. Published by Elsevier Ltd. All rights reserved.

Germination and elongation of flax in microgravity

NASA Astrophysics Data System (ADS)

Levine, Howard G.; Anderson, Ken; Boody, April; Cox, Dave; Kuznetsov, Oleg A.; Hasenstein, Karl H.

2003-05-01

This experiment was conducted as part of a risk mitigation payload aboard the Space Shuttle Atlantis on STS-101. The objectives were to test a newly developed water delivery system, and to determine the optimal combination of water volume and substrate for the imbibition and germination of flax ( Linum usitatissimum) seeds in space. Two different combinations of germination paper were tested for their ability to absorb, distribute, and retain water in microgravity. A single layer of thick germination paper was compared with one layer of thin germination paper under a layer of thick paper. Paper strips were cut to fit snugly into seed cassettes, and seeds were glued to them with the micropyle ends pointing outward. Water was delivered in small increments that traveled through the paper via capillary action. Three water delivery volumes were tested, with the largest (480 μL) outperforming the 400 μL, and 320 μL volumes for percent germination (90.6%) and root growth (mean = 4.1 mm) during the 34-hour spaceflight experiment. The ground control experiment yielded similar results, but with lower rates of germination (84.4%) and shorter root lengths (mean = 2.8 mm). It is not clear if the roots emerged more quickly in microgravity and/or grew faster than the ground controls. The single layer of thick germination paper generally exhibited better overall growth than the two layered option. Significant seed position effects were observed in both the flight and ground control experiments. Overall, the design of the water delivery system, seed cassettes and the germination paper strip concept was validated as an effective method for promoting seed germination and root growth under microgravity conditions.

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

The oxidation of TaBe sub 12 and NbBe sub 12 coatings on niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Courtright, E.L.

1990-01-01

The oxidation behavior of tantalum and niobium beryllide coatings on niobium were evaluated. Intermetallic bond layers consisting of Ir{sub 3}Ta and Ir{sub 3}Nb were used to butter the large thermal expansion mismatch between the beryllide coatings and underlying niobium substrate. All coatings were applied by Triode Sputtering except for a final environmental protection layer of stabilized zirconia deposited by RF Diode using a ceramic target. Severe delamination and spalling occurred during cyclic oxidation exposure, even at temperatures as low as 925{degrees}C, indicating that the bond layer did not prevent the differential expansion stresses from reaching the delamination failure threshold, particularlymore » at the edges and corners. Hot pressed samples of the two beryllide compounds were also exposed to a similar cyclic oxidation history, but, in contrast to the coatings, exhibited excellent oxidation resistance to temperatures as high as 1370{degrees}C. 9 refs., 8 figs., 1 tab.« less

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer.

PubMed

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus

2013-09-30

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer

PubMed Central

Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S.; Atif, Muhammad; Ansari, Anees A.; Willander, Magnus

2013-01-01

In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices. PMID:28788336

Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

NASA Astrophysics Data System (ADS)

Caraveo-Frescas, J. A.; Hedhili, M. N.; Wang, H.; Schwingenschlögl, U.; Alshareef, H. N.

2012-03-01

It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ˜350 mV negative shift with the Si overlayer present and a ˜110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} as potential gate dielectrics for GaN/Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Partida-Manzanera, T., E-mail: sgtparti@liv.ac.uk; Institute of Materials Research and Engineering, A*STAR; Roberts, J. W.

2016-01-14

This paper describes a method to optimally combine wide band gap Al{sub 2}O{sub 3} with high dielectric constant (high-κ) Ta{sub 2}O{sub 5} for gate dielectric applications. (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta{sub 2}O{sub 5} molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al{sub 2}O{sub 3} to 4.6 eV for pure Ta{sub 2}O{sub 5}. The dielectric constant calculated from capacitance-voltage measurementsmore » also increases linearly from 7.8 for Al{sub 2}O{sub 3} up to 25.6 for Ta{sub 2}O{sub 5}. The effect of post-deposition annealing in N{sub 2} at 600 °C on the interfacial properties of undoped Al{sub 2}O{sub 3} and Ta-doped (Ta{sub 2}O{sub 5}){sub 0.12}(Al{sub 2}O{sub 3}){sub 0.88} films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al{sub 2}O{sub 3}/GaN-HEMT and (Ta{sub 2}O{sub 5}){sub 0.16}(Al{sub 2}O{sub 3}){sub 0.84}/GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al{sub 2}O{sub 3} can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.« less

Purification and Characterization of a New Antifungal Compound 10-(2,2-dimethyl-cyclohexyl)-6,9-dihydroxy-4,9-dimethyl-dec-2-enoic Acid Methyl Ester from Streptomyces hydrogenans Strain DH16

PubMed Central

Kaur, Talwinder; Kaur, Amarjeet; Sharma, Vishal; Manhas, Rajesh K.

2016-01-01

In agriculture, biocontrol agents have been emerged as safe alternative to chemical pesticides where Streptomyces spp. and their metabolites constitute a great potential for their exploration as potent agents for controlling various fungal phytopathogens. The present study reports an antifungal compound purified from Streptomyces hydrogenans strain DH16, a soil isolate, using silica gel chromatography and semi preparative HPLC. The compound was characterized using various spectroscopic techniques (IR, 1H and 13C NMR) and named 10-(2,2-dimethyl-cyclohexyl)-6,9-dihydroxy-4,9-dimethyl-dec-2-enoic acid methyl ester (SH2). Compound (SH2) showed significant inhibitory activity against fungal phytopathogens and resulted in severe morphological aberrations in their structure. Minimal inhibitory and minimal fungicidal concentrations of the compound ranged from 6.25 to 25 μg/ml and 25 to 50 μg/ml, respectively. In vivo evaluation of the compound showed strong control efficacy against Alternaria brassicicola, a seed borne pathogen, on radish seeds. In comparison to mancozeb and carbendazim, the compound was more effective in controlling damping off disease. Additionally, it promoted plant growth with increased rate of seed germination, and displayed no phytotoxicity. The compound retained its antifungal activity after its exposure to temperature of 100°C and sunlight for 1 h. Furthermore, the compound (SH2) when tested for its biosafety was found to be non-cytotoxic, and non-mutagenic against Salmonella typhimurium TA98 and TA100 strains. This compound from S. hydrogenans strain DH16 has not been reported earlier, so this new compound can be developed as an ideal safe and superior biofungicide for the control of various fungal plant diseases. PMID:27446043

Improving phenolic bioactive-linked anti-hyperglycemic functions of dark germinated barley sprouts (Hordeum vulgare L.) using seed elicitation strategy.

PubMed

Ramakrishna, Ramnarain; Sarkar, Dipayan; Manduri, Avani; Iyer, Shreyas Ganesan; Shetty, Kalidas

2017-10-01

Sprouts of cereal grains, such as barley ( Hordeum vulgare L.), are a good source of beneficial phenolic bioactives. Such health relevant phenolic bioactives of cereal sprouts can be targeted to manage chronic hyperglycemia and oxidative stress commonly associated with type 2 diabetes (T2D). Therefore improving phenolic bioactives by stimulating plant endogenous defense responses such as protective pentose phosphate pathway (PPP) during sprouting has significant merit. Based on this metabolic rationale, this study aimed to enhance phenolic bioactives and associated antioxidant and anti-hyperglycemic functions in dark germinated barley sprouts using exogenous elicitor treatments. Dark-germinated sprouts of two malting barley cultivars (Pinnacle and Celebration), treated with chitosan oligosaccharide (COS) and marine protein hydrolysate (GP), were evaluated. Total soluble phenolic content (TSP), phenolic acid profiles, total antioxidant activity (TA) and in vitro inhibitory activities of hyperglycemia relevant α-amylase and α-glucosidase enzymes of the dark germinated barley sprouts were evaluated at day 2, 4, and 6 post elicitor treatments. Overall, TSP content, TA, and α-amylase inhibitory activity of dark germinated barley sprouts decreased, while α-glucosidase inhibitory activity and gallic acid content increased from day 2 to day 6. Among barley cultivars, high phenolic antioxidant-linked anti-hyperglycemic bioactives were observed in Celebration. Furthermore, GP and COS seed elicitor treatments in selective doses improved T2D relevant phenolic-linked anti-hyperglycemic bioactives of barley spouts at day 6. Therefore, such seed elicitation approach can be strategically used to develop bioactive enriched functional food ingredients from cereal sprouts targeting chronic hyperglycemia and oxidative stress linked to T2D.

Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

PubMed

Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

2016-01-28

The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may show higher charge carrier mobility because of the lower electron effective mass.

Method of transferring strained semiconductor structure

DOEpatents

Nastasi, Michael A [Santa Fe, NM; Shao, Lin [College Station, TX

2009-12-29

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Structure of the Developing Pea Seed Coat and the Post‐phloem Transport Pathway of Nutrients

PubMed Central

VAN DONGEN, JOOST T.; AMMERLAAN, ANKIE M. H.; WOUTERLOOD, MADELEINE; VAN AELST, ADRIAAN C.; BORSTLAP, ADRIANUS C.

2003-01-01

An important function of the seed coat is to deliver nutrients to the embryo. To relate this function to anatomical characteristics, the developing seed coat of pea (Pisum sativum L.) was examined by light‐ and cryo‐scanning electron microscopy (cryo‐SEM) from the late pre‐storage phase until the end of seed filling. During this time the apparently undifferentiated seed coat tissues evolve into the epidermal macrosclereids, the hypodermal hourglass cells, chlorenchyma, ground parenchyma and branched parenchyma. Using the fluorescent symplast tracer 8‐hydroxypyrene‐1,3,6‐trisulfonic acid, it could be demonstrated that solutes imported by the phloem move into the chlorenchyma and ground parenchyma, but not into the branched parenchyma. From a comparison with literature data of common bean (Phaseolus vulgaris L.) and broad bean (Vicia faba L.), it is concluded that in the three species different parenchyma layers, but not the branched parenchyma, may be involved in the post‐phloem symplasmic transport of nutrients in the seed coat. In pea, the branched parenchyma dies during the storage phase, and its cell wall remnants then form the boundary layer between the living seed coat parenchyma cells and the cotyledons. Using cryo‐SEM, clear images were obtained of this boundary layer which showed that many intracellular spaces in the seed coat parenchyma are filled with an aqueous solution. This is suggested to facilitate the diffusion of nutrients from the site of unloading towards the cotyledons. PMID:12714370

Estimation of loci involved in non-shattering of seeds in early rice domestication.

PubMed

Ishikawa, Ryo; Nishimura, Akinori; Htun, Than Myint; Nishioka, Ryo; Oka, Yumi; Tsujimura, Yuki; Inoue, Chizuru; Ishii, Takashige

2017-04-01

Rice (Oryza sativa L.) is widely cultivated around the world and is known to be domesticated from its wild form, O. rufipogon. A loss of seed shattering is one of the most obvious phenotypic changes selected for during rice domestication. Previously, three seed-shattering loci, qSH1, sh4, and qSH3 were reported to be involved in non-shattering of seeds of Japonica-type cultivated rice, O. sativa cv. Nipponbare. In this study, we focused on non-shattering characteristics of O. sativa Indica cv. IR36 having functional allele at qSH1. We produced backcross recombinant inbred lines having chromosomal segments from IR36 in the genetic background of wild rice, O. rufipogon W630. Histological and quantitative trait loci analyses of abscission layer formation were conducted. In the analysis of quantitative trait loci, a strong peak was observed close to sh4. We, nevertheless, found that some lines showed complete abscission layer formation despite carrying the IR36 allele at sh4, implying that non-shattering of seeds of IR36 could be regulated by the combination of mutations at sh4 and other seed-shattering loci. We also genotyped qSH3, a recently identified seed-shattering locus. Lines that have the IR36 alleles at sh4 and qSH3 showed inhibition of abscission layer formation but the degree of seed shattering was different from that of IR36. On the basis of these results, we estimated that non-shattering of seeds in early rice domestication involved mutations in at least three loci, and these genetic materials produced in this study may help to identify novel seed-shattering loci.

The MADS Box Genes ABS, SHP1, and SHP2 Are Essential for the Coordination of Cell Divisions in Ovule and Seed Coat Development and for Endosperm Formation in Arabidopsis thaliana

PubMed Central

Tekleyohans, Dawit G.; Wittkop, Benjamin; Snowdon, Rod J.

2016-01-01

Seed formation is a pivotal process in plant reproduction and dispersal. It begins with megagametophyte development in the ovule, followed by fertilization and subsequently coordinated development of embryo, endosperm, and maternal seed coat. Two closely related MADS-box genes, SHATTERPROOF 1 and 2 (SHP1 and SHP2) are involved in specifying ovule integument identity in Arabidopsis thaliana. The MADS box gene ARABIDOPSIS BSISTER (ABS or TT16) is required, together with SEEDSTICK (STK) for the formation of endothelium, part of the seed coat and innermost tissue layer formed by the maternal plant. Little is known about the genetic interaction of SHP1 and SHP2 with ABS and the coordination of endosperm and seed coat development. In this work, mutant and expression analysis shed light on this aspect of concerted development. Triple tt16 shp1 shp2 mutants produce malformed seedlings, seed coat formation defects, fewer seeds, and mucilage reduction. While shp1 shp2 mutants fail to coordinate the timely development of ovules, tt16 mutants show less peripheral endosperm after fertilization. Failure in coordinated division of the innermost integument layer in early ovule stages leads to inner seed coat defects in tt16 and tt16 shp1 shp2 triple mutant seeds. An antagonistic action of ABS and SHP1/SHP2 is observed in inner seed coat layer formation. Expression analysis also indicates that ABS represses SHP1, SHP2, and FRUITFUL expression. Our work shows that the evolutionary conserved Bsister genes are required not only for endothelium but also for endosperm development and genetically interact with SHP1 and SHP2 in a partially antagonistic manner. PMID:27776173

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Helium and deuterium irradiation effects in W-Ta composites produced by pulse plasma compaction

NASA Astrophysics Data System (ADS)

Dias, M.; Catarino, N.; Nunes, D.; Fortunato, E.; Nogueira, I.; Rosinki, M.; Correia, J. B.; Carvalho, P. A.; Alves, E.

2017-08-01

Tungsten-tantalum composites have been envisaged for first-wall components of nuclear fusion reactors; however, changes in their microstructure are expected from severe irradiation with helium and hydrogenic plasma species. In this study, composites were produced from ball milled W powder mixed with 10 at.% Ta fibers through consolidation by pulse plasma compaction. Implantation was carried out at room temperature with He+ (30 keV) or D+ (15 keV) or sequentially with He+ and D+ using ion beams with fluences of 5 × 1021 at/m2. Microstructural changes and deuterium retention in the implanted composites were investigated by scanning electron microscopy, coupled with focused ion beam and energy dispersive X-ray spectroscopy, transmission electron microscopy, X-ray diffraction, Rutherford backscattering spectrometry and nuclear reaction analysis. The composite materials consisted of Ta fibers dispersed in a nanostructured W matrix, with Ta2O5 layers at the interfacial regions. The Ta and Ta2O5 surfaces exhibited blisters after He+ implantation and subsequent D+ implantation worsened the blistering behavior of Ta2O5. Swelling was also pronounced in Ta2O5 where large blisters exhibited an internal nanometer-sized fuzz structure. Transmission electron microscopy revealed an extensive presence of dislocations in the metallic phases after the sequential implantation, while a relatively low density of defects was detected in Ta2O5. This behavior may be partially justified by a shielding effect from the blisters and fuzz structure developed progressively during implantation. The tungsten peaks in the X-ray diffractograms were markedly shifted after He+ implantation, and even more so after the sequential implantation, which is in agreement with the increased D retention inferred from nuclear reaction analysis.

Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebedinskii, Yu. Yu.; National Research Nuclear University MEPhI; Chernikova, A. G.

2015-10-05

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the lastmore » one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta{sub 2}O{sub 5+x}/Pt structure during X-ray irradiation, as well as the absence of pinning, resulting in increase of CBO up to 2.3 eV are found. This behavior is related to the PtO{sub 2} interfacing layer formation at Ta{sub 2}O{sub 5+x}/Pt, blocking the charging of the surface states and associated dipole formation.« less

Germination and elongation of flax in microgravity

NASA Astrophysics Data System (ADS)

Levine, H.; Anderson, K.; Boody, A.; Cox, D.; Kuznetsov, O.; Hasenstein, K.

This experiment was conducted as part of a risk mitigation BIOTUBE Precursor hardware demonstration payload aboard the Space Shuttle Atlantis on STS-101. The objectives were to provide a demonstration and test of the newly developed BIOTUBE water delivery subsystem, and to determine the optimal water volume and germination paper combination for the automated imbibition and germination of flax (Linum usitatissimum) seeds in space. Two different substrate treatments of standard laboratory germination paper were tested for their ability to absorb, distribute, and retain water in microgravity. The first consisted of one layer of thick germination paper (designated "heavy"), and the second consisted of one layer of standard germination paper (designated "normal") under one layer of heavy germination paper. The germination paper strips were cut (4 X 1.6 cm) to fit snugly into seed cassettes. The seeds were attached to them by applying guar glue (1.25% w/v) drops to 8 premarked spots and the seeds orientated with the micropyle ends pointing outward. Water was delivered in 50 μL boluses which slowly traveled down the paper via capillary action (eliminating the complications caused by excess water pooling around the seed's surface). The data indicated that the 480 μL water delivery volume provided the best wetness level treatment for both percent germination (90.6%) and overall root growth (mean = 4.1 mm) during the 34 hour spaceflight experiment. The ground control experiment experienced similar results, but with slightly lower rates of germination (84.4%) and significantly shorter root lengths (2.8 mm). It is not clear if the roots emerged more quickly in microgravity and/or grew faster than the ground controls. The single layer of "Heavy" germination paper generally exhibited better overall growth than the two layered option. This in conjunction with the simplicity of using a single strip per seed cassette argues in favor of its selection. Significant seed position effects were observed in both the flight and ground control experiments. Overall, the design of the water delivery subsystem, seed cassettes and the germination paper strip concept was validated under microgravity conditions as an effective method of maintaining seed position and allowing adequate room for root growth. This work was supported under NASA Contract NAS10-002001.

A Novel Seeding Method of Interfacial Polymerization-Assisted Dip Coating for the Preparation of Zeolite NaA Membranes on Ceramic Hollow Fiber Supports.

PubMed

Cao, Yue; Wang, Ming; Xu, Zhen-Liang; Ma, Xiao-Hua; Xue, Shuang-Mei

2016-09-28

A novel seeding method combining interfacial polymerization (IP) technique with dip-coating operation was designed for directly coating nanosized NaA seed crystals (150 nm) onto the micrometer-sized α-Al2O3 hollow fiber support, in which the polyamide (PA) produced by IP acted as an effective medium to freeze and fix seed crystals at the proper position so that the controlled seed layer could be accomplished. While a coating suspension with only 0.5 wt % seed content was used, a very thin seed layer with high quality and good adhesion was achieved through dip coating twice without drying between, and the whole seeding process was operated at ambient conditions. The resulting zeolite NaA membranes not only exhibited high pervaporation (PV) performance with an average separation factor above 10000 and flux nearly 9.0 kg/m(2)·h in dehydration of 90 wt % ethanol aqueous solution at 348 K but also demonstrated great reproducibility by testing more than eight batches of zeolite membranes. In addition, this seeding strategy could be readily extended to the preparation of other supported zeolite membranes for a wide range of separation applications.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

PubMed

Liu, Guanxiong; Debnath, Bishwajit; Pope, Timothy R; Salguero, Tina T; Lake, Roger K; Balandin, Alexander A

2016-10-01

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe 2 , 1T-TaS 2 and 1T-TiSe 2 exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS 2 less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS 2 film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Novel elastic, lattice dynamics and thermodynamic properties of metallic single-layer transition metal phosphides: 2H-M 2P (Mo2P, W2P, Nb2P and Ta2P)

NASA Astrophysics Data System (ADS)

Yin, Jiuren; Wu, Bozhao; Wang, Yanggang; Li, Zhimi; Yao, Yuanpeng; Jiang, Yong; Ding, Yanhuai; Xu, Fu; Zhang, Ping

2018-04-01

Recently, there has been a surge of interest in the research of two-dimensional (2D) phosphides due to their unique physical properties and wide applications. Transition metal phosphides 2H-M 2Ps (Mo2P, W2P, Nb2P and Ta2P) show considerable catalytic activity and energy storage potential. However, the electronic structure and mechanical properties of 2D 2H-M 2Ps are still unrevealed. Here, first-principles calculations are employed to investigate the lattice dynamics, elasticity and thermodynamic properties of 2H-M 2Ps. Results show that M 2Ps with lower stiffness exhibit remarkable lateral deformation under unidirectional loads. Due to the largest average Grüneisen parameter, single-layer Nb2P has the strongest anharmonic vibrations, resulting in the highest thermal expansion coefficient. The lattice thermal conductivities of Ta2P, W2P and Nb2P contradict classical theory, which would predict a smaller thermal conductivity due to the much heavier atom mass. Moreover, the calculations also demonstrate that the thermal conductivity of Ta2P is the highest as well as the lowest thermal expansion, owing to its weak anharmonic phonon scattering and the lowest average Grüneisen parameter. The insight provided by this study may be useful for future experimental and theoretical studies concerning 2D transition metal phosphide materials.

Quantitative characterization of spin-orbit torques in Pt/Co/Pt/Co/Ta/BTO heterostructures due to the magnetization azimuthal angle dependence

NASA Astrophysics Data System (ADS)

Engel, Christian; Goolaup, Sarjoosing; Luo, Feilong; Lew, Wen Siang

2017-08-01

Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT effective field dependence on the out-of-plane magnetization angle has been relatively extensive, the understanding of in-plane magnetization angle dependence remains unknown. Here, we analytically propose a method to compute the SOT effective fields as a function of the in-plane magnetization angle using the harmonic Hall technique in perpendicular magnetic anisotropy (PMA) structures. Two different samples with PMA, a Pt /Co /Pt /Co /Ta /BaTi O3 (BTO) test sample and a Pt/Co/Pt/Co/Ta reference sample, are studied using the derived formula. Our measurements reveal that only the dampinglike field of the test sample with a BTO capping layer exhibits an in-plane magnetization angle dependence, while no angular dependence is found in the reference sample. The presence of the BTO layer in the test sample, which gives rise to a Rashba effect at the interface, is ascribed as the source of the angular dependence of the dampinglike field.

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

NASA Astrophysics Data System (ADS)

Persano, A.; Quaranta, F.; Martucci, M. C.; Cretı, P.; Siciliano, P.; Cola, A.

2010-06-01

The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm2 for E =1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

Broad bandwidth coatings allow angle of incidence flexibility and accommodate spectral shifts due to aging and water absorption. Higher refractive index materials in optical coatings, such as TiO 2, Nb 2O 5, and Ta 2O 5, can be used to achieve broader bandwidths compared to coatings that contain HfO 2 high index layers. We have identified the deposition settings that lead to the highest index, lowest absorption layers of TiO 2, Nb 2O 5, and Ta 2O 5, via e-beam evaporation using ion-assisted deposition. We paired these high index materials with SiO 2 as the low index material to createmore » broad bandwidth high reflection coatings centered at 1054 nm for 45 deg angle of incidence and P polarization. Furthermore, high reflection bandwidths as large as 231 nm were realized. Laser damage tests of these coatings using the ISO 11254 and NIF-MEL protocols are presented, which revealed that the Ta 2O 5/SiO 2 coating exhibits the highest resistance to laser damage, at the expense of lower bandwidth compared to the TiO 2/SiO 2 and Nb 2O 5/SiO 2 coatings.« less

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

NASA Astrophysics Data System (ADS)

Svetin, Damjan; Vaskivskyi, Igor; Brazovskii, Serguei; Mihailovic, Dragan

2017-04-01

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer “orbitronic” re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ⊥ and ρ||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.

Crystalline Membranes

NASA Technical Reports Server (NTRS)

Tsapatsis, Michael (Inventor); Lai, Zhiping (Inventor)

2008-01-01

In certain aspects, the invention features methods for forming crystalline membranes (e.g., a membrane of a framework material, such as a zeolite) by inducing secondary growth in a layer of oriented seed crystals. The rate of growth of the seed crystals in the plane of the substrate is controlled to be comparable to the rate of growth out of the plane. As a result, a crystalline membrane can form a substantially continuous layer including grains of uniform crystallographic orientation that extend through the depth of the layer.

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

PubMed

Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

2017-03-29

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

Coatings for directional eutectics

NASA Technical Reports Server (NTRS)

Rairden, J. R.; Jackson, M. R.

1976-01-01

Coatings developed to provide oxidation protection for the directionally-solidified eutectic alloy NiTaC-B (4.4 weight percent Cr) were evaluated. Of seven Co-, Fe- and Ni-base coatings that were initially investigated, best resistance to cyclic oxidation was demonstrated by duplex coatings fabricated by depositing a layer of NiCrAl(Y) by vacuum evaporation from an electron beam source followed by deposition of an Al overlayer using the pack cementation process. It was found that addition of carbon to the coating alloy substantially eliminated the problem of fiber denudation in TaC-type eutectic alloys. Burner rig cycled NiTaC-B samples coated with Ni-20Cr-5Al-0.1C-0.1Y+Al and rupture-tested at 1100 deg C performed as well as or better than uncoated, vacuum cycled and air-tested NiTaC-13; however, a slight degradation with respect to uncoated material was noted in air-stress rupture tests at 870 deg C for both cycled and uncycled samples.

Thermal management of thermoacoustic sound projectors using a free-standing carbon nanotube aerogel sheet as a heat source.

PubMed

Aliev, Ali E; Mayo, Nathanael K; Baughman, Ray H; Avirovik, Dragan; Priya, Shashank; Zarnetske, Michael R; Blottman, John B

2014-10-10

Carbon nanotube (CNT) aerogel sheets produce smooth-spectra sound over a wide frequency range (1-10(5) Hz) by means of thermoacoustic (TA) sound generation. Protective encapsulation of CNT sheets in inert gases between rigid vibrating plates provides resonant features for the TA sound projector and attractive performance at needed low frequencies. Energy conversion efficiencies in air of 2% and 10% underwater, which can be enhanced by further increasing the modulation temperature. Using a developed method for accurate temperature measurements for the thin aerogel CNT sheets, heat dissipation processes, failure mechanisms, and associated power densities are investigated for encapsulated multilayered CNT TA heaters and related to the thermal diffusivity distance when sheet layers are separated. Resulting thermal management methods for high applied power are discussed and deployed to construct efficient and tunable underwater sound projector for operation at relatively low frequencies, 10 Hz-10 kHz. The optimal design of these TA projectors for high-power SONAR arrays is discussed.

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Improved thermal stability of Mn-Ir-based magnetic tunnel junction with nano-oxide layer

NASA Astrophysics Data System (ADS)

Yoon, S. Y.; Kim, Y. I.; Lee, D. H.; Kim, Y. S.; Suh, S. J.

2004-06-01

Si/SiO2/Ta/NiFe/Mn-Ir/CoFe/NOL/CoFe/Al-O/CoFe/NiFe/Ta bottom conventional (without nano-oxide layer, NOL) and specular (with NOL) MTJs were prepared by DC magnetron sputtering methods. In the case of a conventional MTJ, the TMR ratio increased up to 300 °C but the TMR ratio of a specular MTJ increased up to 400 °C. The highest TMR ratios of two samples after annealing at each optimal temperature were 21.6% (conventional MTJ) and 22.7% (specular MTJ), respectively, This improved thermal property of the specular MTJ is due to the NOL, which could act as a diffusion barrier for Mn. The bias-voltage dependence of both samples was vastly improved after annealing at each optimal temperature.

Mechanical and histological characterization of the abdominal muscle. A previous step to modelling hernia surgery.

PubMed

Hernández, B; Peña, E; Pascual, G; Rodríguez, M; Calvo, B; Doblaré, M; Bellón, J M

2011-04-01

The aims of this study are to experimentally characterize the passive elastic behaviour of the rabbit abdominal wall and to develop a mechanical constitutive law which accurately reproduces the obtained experimental results. For this purpose, tissue samples from New Zealand White rabbits 2150±50 (g) were mechanically tested in vitro. Mechanical tests, consisting of uniaxial loading on tissue samples oriented along the craneo-caudal and the perpendicular directions, respectively, revealed the anisotropic non-linear mechanical behaviour of the abdominal tissues. Experiments were performed considering the composite muscle (including external oblique-EO, internal oblique-IO and transverse abdominis-TA muscle layers), as well as separated muscle layers (i.e., external oblique, and the bilayer formed by internal oblique and transverse abdominis). Both the EO muscle layer and the IO-TA bilayer demonstrated a stiffer behaviour along the transversal direction to muscle fibres than along the longitudinal one. The fibre arrangement was measured by means of a histological study which confirmed that collagen fibres are mainly responsible for the passive mechanical strength and stiffness. Furthermore, the degree of anisotropy of the abdominal composite muscle turned out to be less pronounced than those obtained while studying the EO and IO-TA separately. Moreover, a phenomenological constitutive law was used to capture the measured experimental curves. A Levenberg-Marquardt optimization algorithm was used to fit the model constants to reproduce the experimental curves. Copyright © 2010 Elsevier Ltd. All rights reserved.

Polarized neutron reflectivity study of perpendicular magnetic anisotropy in MgO/CoFeB/W thin films

NASA Astrophysics Data System (ADS)

Ambaye, Haile; Zhan, Xiao; Li, Shufa; Lauter, Valeria; Zhu, Tao

In this work we study the origin of PMA in MgO/CoFeB/W trilayer systems using polarized neutron reflectivity. Recently, the spin Hall effect in the heavy metals, such as Pt and Ta, has been of significant interest for highly efficient magnetization switching of the ultrathin ferromagnets sandwiched by such a heavy metal and an oxide, which can be used for spintronic based memory and logic devices. Most work has focused on heavy-metal/ferromagnet/oxide trilayer (HM/FM/MO) structures with perpendicular magnetic anisotropy (PMA), where the oxide layer plays the role of breaking inversion symmetry .No PMA was found in W/CoFeB/MgO films. An insertion of Hf layer in between the W and CoFeB layers, however, has been found to create a strong PMA. Roughness and formation of interface alloys by interdiffusion influences the extent of PMA. We intend to identify these influences using the depth sensitive technique of PNR. In our previous study, we have successfully performed polarized neutron reflectometry (PNR) measurements on the Ta/CoFeB/MgO/CoFeB/Ta thin film with MgO thickness of 1 nm. The PNR measurements were carried out using the BL-4A Magnetic Reflectometer at SNS. This work has been supported by National Basic Research Program of China (2012CB933102). Research at SNS was supported by the Office of BES, DOE.

Paths of water entry and structures involved in the breaking of seed dormancy of Lupinus.

PubMed

Robles-Díaz, Erika; Flores, Joel; Yáñez-Espinosa, Laura

2016-03-15

Physical dormancy is the water impermeability of the seed coat caused by one or more palisade cell layer(s) called macrosclereids. The specialised structure for water entry sites is the water gap, which serves as a detector of environmental cues for germination. In Fabaceae, the water gap is the lens, although another seed structure for water entry could exist. In this study, we identified the initial site of water entry, observed the hydration of a cushion-like structure near the radicle, described the anatomy of the water gap, and analysed the association of anatomical seed traits with the initial site of water entry and the imbibition velocity of six species of Lupinus from the state of Jalisco, Mexico. Dye tracking with a toluidine blue solution was used to identify the initial site of water entry. The anatomical description was performed using conventional microtechnique and a light microscope. The entry of the toluidine solution into seeds of L. montanus was observed after 6h, followed by L. exaltatus and L. mexicanus after 18h and L. elegans, L. reflexus and L. rotundiflorus after 48h. The site of water entry was the lens in L. elegans, L. exaltatus, L. reflexus and L. rotundiflorus and the micropyle in L. mexicanus and L. montanus. The cushion-like structure was responsible for water accumulation in embryo imbibition. Significant differences among anatomical seed traits such as thickness in the hilar region, the counter-palisade layer, cushion-like structure, epidermis, hypodermis, and innermost parenchyma layer were found among the species. Copyright © 2016 Elsevier GmbH. All rights reserved.

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

DOEpatents

Weihs, Timothy P.; Barbee, Jr., Troy W.

2002-01-01

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

The MADS-box gene Agamous-like 11 is essential for seed morphogenesis in grapevine.

PubMed

Malabarba, Jaiana; Buffon, Vanessa; Mariath, Jorge E A; Gaeta, Marcos L; Dornelas, Marcelo C; Margis-Pinheiro, Márcia; Pasquali, Giancarlo; Revers, Luís F

2017-03-01

Despite the wide appreciation of seedless grapes, little is known about the molecular mechanisms that drive the stenospermocarpic seedless-type phenotype in grapevine. In order to address the molecular mechanisms that control seedlessness in grapevine, our study aimed to characterize VviAGL11, a class D MADS-box transcription factor gene that has been proposed as the major candidate gene involved in Vitis vinifera seed morphogenesis. VviAGL11 allelic variations in seeded and seedless grapevine cultivars were determined, and its correlations with allele-specific steady-state mRNA levels were investigated. VviAGL11 relative expression was significantly higher in seeds at 2, 4, and 6 weeks after fruit set, whereas in the seedless grape its transcript levels were extremely low in all stages analyzed. In situ hybridization revealed transcript accumulation specifically in the dual endotesta layer of the seeds, which is responsible for elongation and an increase of cell number, a necessary step to determine the lignification and the final seed size. No hybridization signals were visible in the seedless grapevine tissues, and a morphoanatomical analysis showed an apparent loss of identity of the endotesta layer of the seed traces. Ectopic expression of VviAGL11 in the Arabidopsis SEEDSTICK mutant background restored the wild-type phenotype and confirmed the direct role of VviAGL11 in seed morphogenesis, suggesting that depletion of its expression is responsible for the erroneous development of a highly essential seed layer, therefore culminating in the typical apirenic phenotype. © The Author 2017. Published by Oxford University Press on behalf of the Society for Experimental Biology. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Influence of the Testa on Seed Dormancy, Germination, and Longevity in Arabidopsis1

PubMed Central

Debeaujon, Isabelle; Léon-Kloosterziel, Karen M.; Koornneef, Maarten

2000-01-01

The testa of higher plant seeds protects the embryo against adverse environmental conditions. Its role is assumed mainly by controlling germination through dormancy imposition and by limiting the detrimental activity of physical and biological agents during seed storage. To analyze the function of the testa in the model plant Arabidopsis, we compared mutants affected in testa pigmentation and/or structure for dormancy, germination, and storability. The seeds of most mutants exhibited reduced dormancy. Moreover, unlike wild-type testas, mutant testas were permeable to tetrazolium salts. These altered dormancy and tetrazolium uptake properties were related to defects in the pigmentation of the endothelium and its neighboring crushed parenchymatic layers, as determined by vanillin staining and microscopic observations. Structural aberrations such as missing layers or a modified epidermal layer in specific mutants also affected dormancy levels and permeability to tetrazolium. Both structural and pigmentation mutants deteriorated faster than the wild types during natural aging at room temperature, with structural mutants being the most strongly affected. PMID:10677433

Micro-PIXE investigation of bean seeds to assist micronutrient biofortification

NASA Astrophysics Data System (ADS)

Cvitanich, Cristina; Przybyłowicz, Wojciech J.; Mesjasz-Przybyłowicz, Jolanta; Blair, Matthew W.; Astudillo, Carolina; Orłowska, Elżbieta; Jurkiewicz, Anna M.; Jensen, Erik Ø.; Stougaard, Jens

2011-10-01

This study compares the distribution and concentrations of micro- and macronutrients in different bean cultivars with the aim of optimizing the biofortification, a sustainable approach towards improving dietary quality. Micro-PIXE was used to reveal the distribution of Fe, Zn, Mn, Ca, P, S in seeds of common beans (Phaseolus vulgaris) and runner beans (Phaseolus coccineus). Average concentrations of elements in different tissues were obtained using ICP-AES. The highest concentrations of Zn in the studied beans were found in the embryonic axis, but an increased concentration of this element was also detected in the provascular bundles of the cotyledons. The first layer of cells surrounding provascular bundles accumulated high concentrations of Fe, while the next cell layer had an increased concentration of Mn. The analysis showed that the provascular bundles and the first cell layers surrounding them could have a significant role in the storage of important seed micronutrients - Zn, Fe, and Mn. This information has important implications for molecular biology studies aimed at seed biofortification.

Delimitation of the Earliness per se D1 (Eps-D1) flowering gene to a subtelomeric chromosomal deletion in bread wheat (Triticum aestivum).

PubMed

Zikhali, Meluleki; Wingen, Luzie U; Griffiths, Simon

2016-01-01

Earliness per se (Eps) genes account for the variation in flowering time when vernalization and photoperiod requirements are satisfied. Genomics and bioinformatics approaches were used to describe allelic variation for 40 Triticum aestivum genes predicted, by synteny with Brachypodium distachyon, to be in the 1DL Eps region. Re-sequencing 1DL genes revealed that varieties carrying early heading alleles at this locus, Spark and Cadenza, carry a subtelomeric deletion including several genes. The equivalent region in Rialto and Avalon is intact. A bimodal distribution in the segregating Spark X Rialto single seed descent (SSD) populations enabled the 1DL QTL to be defined as a discrete Mendelian factor, which we named Eps-D1. Near isogenic lines (NILs) and NIL derived key recombinants between markers flanking Eps-D1 suggest that the 1DL deletion contains the gene(s) underlying Eps-D1. The deletion spans the equivalent of the Triticum monoccocum Eps-A (m) 1 locus, and hence includes MODIFIER OF TRANSCRIPTION 1 (MOT1) and FTSH PROTEASE 4 (FTSH4), the candidates for Eps-A (m) 1. The deletion also contains T. aestivum EARLY FLOWERING 3-D1 (TaELF3-D1) a homologue of the Arabidopsis thaliana circadian clock gene EARLY FLOWERING 3. Eps-D1 is possibly a homologue of Eps-B1 on chromosome 1BL. NILs carrying the Eps-D1 deletion have significantly reduced total TaELF3 expression and altered TaGIGANTEA (TaGI) expression compared with wild type. Altered TaGI expression is consistent with an ELF3 mutant, hence we propose TaELF3-D1 as the more likely candidate for Eps-D1. This is the first direct fine mapping of Eps effect in bread wheat. © The Author 2015. Published by Oxford University Press on behalf of the Society for Experimental Biology.

Effect of nickel seed layer on growth of α-V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha; Reddy, G. B.

2015-08-01

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V2O5) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ˜ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V2O5 film deposited on both substrates are carried out by SEM, revealed that features of V2O5 NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

PROCESSING OF HIGH-PERFORMANCE Nb{sub 3}Sn WIRES THROUGH A NEW DIFFUSION REACTION USING Sn BASED ALLOYS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tachikawa, K.; Sasaki, H.; Yamaguchi, M.

Tightly consolidated Sn-Ta and Sn-B based alloys have been prepared by the reaction among constituent metal powders at 750-775 deg. C. Sn-Ta and Sn-B based alloys exhibit quite similar microstructures. A small amount of Ti addition seems to improve the bonding between Ta or B particles and Sn matrix. Nb{sub 3}Sn wires have been fabricated by the Jelly Roll (JR) and Multi-rod (MR) process using Sn based alloy sheet and rod, respectively. Thick Nb{sub 3}Sn layers with nearly stoichiometric A15 composition are synthesized through a new diffusion mechanism between Nb and Sn based alloy. B{sub c2}(4.2 K)'s of 26.9 Tmore » (mid) and 26.5 T (mid) have been obtained in the JR and MR processed wires, respectively, using Sn-Ta based alloy. These wires exhibit enough non-Cu J{sub c} to be used above 20 T and 4.2 K. T{sub c} of JR wires using Sn-B based sheet is 18.14 K (offset) which is slightly higher than that of wires using Sn-Ta based sheet.« less

Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide

DOE PAGES

Bondi, Robert J.; Marinella, Matthew J.

2015-02-28

First-principles density-functional theory (DFT) calculations are used to study the atomistic structure, structural energetics, and electron density near the O monovacancy (V O n; n=0,1+,2+) in both bulk, amorphous tantalum pentoxide (a-Ta 2O 5) and also at vacuum and metallic Ta interfaces. We calculate multivariate vacancy formation energies to evaluate stability as a function of oxidation state, distance from interface plane, and Fermi energy. V O n of all oxidation states preferentially segregate at both Ta and vacuum interfaces, where the metallic interface exhibits global formation energy minima. In a-Ta 2O 5, V O 0 are characterized by structural contractionmore » and electron density localization, while V O 2+ promote structural expansion and are depleted of electron density. In contrast, interfacial V O 0 and V O 2+ show nearly indistinguishable ionic and electronic signatures indicative of a reduced V O center. Interfacial V O 2+ extract electron density from metallic Ta indicating V O 2+ is spontaneously reduced at the expense of the metal. This oxidation/reduction behavior suggests careful selection and processing of both oxide layer and metal electrodes for engineering memristor device operation.« less

Differences in chemical doping matter: Superconductivity in Ti 1-xTa xSe 2 but not in Ti 1-xNb xSe 2

DOE PAGES

Luo, Huixia; Zhu, Yimei; Xie, Weiwei; ...

2016-02-21

We report that 1T-TiSe 2, an archetypical layered transition metal dichalcogenide, becomes superconducting when Ta is substituted for Ti but not when Nb is substituted for Ti. This is unexpected because Nb and Ta should be chemically equivalent electron donors. Superconductivity emerges near x = 0.02 for Ti 1–xTa xSe 2, while, for Ti 1–xNb xSe 2, no superconducting transitions are observed above 0.4 K. The equivalent chemical nature of the dopants is confirmed by X-ray photoelectron spectroscopy. ARPES and Raman scattering studies show similarities and differences between the two systems, but the fundamental reasons why the Nb and Tamore » dopants yield such different behavior are unknown. We present a comparison of the electronic phase diagrams of many electron-doped 1T-TiSe 2 systems, showing that they behave quite differently, which may have broad implications in the search for new superconductors. Here, we propose that superconducting Ti 0.8Ta 0.2Se 2 will be suitable for devices and other studies based on exfoliated crystal flakes.« less

Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO

NASA Astrophysics Data System (ADS)

Lee, Jin-Woo; Kwon, Hyeon-Min; Kim, Myeong-Ho; Lee, Seung-Ryul; Kim, Young-Bae; Choi, Duck-Kyun

2014-05-01

Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I- V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO x was examined in a Pt/a-IGZO/TaO x /Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO x , an oxygen-rich TaO x interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO x . The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 101 at a read voltage of -0.5 V, and the rectifying ratio was about 103 at ±2 V.

Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

NASA Astrophysics Data System (ADS)

Virshup, Ariel R.

With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

Surface nucleation in complex rheological systems

NASA Astrophysics Data System (ADS)

Herfurth, J.; Ulrich, J.

2017-07-01

Forced nucleation induced by suitable foreign seeds is an important tool to control the production of defined crystalline products. The quality of a surface provided by seed materials represents an important variable in the production of crystallizing layers that means for the nucleation process. Parameters like shape and surface structure, size and size distribution of the seed particles as well as the ability to hold up the moisture (the solvent), can have an influence on the nucleation process of different viscous supersaturated solutions. Here the properties of different starch powders as seeds obtained from corn, potato, rice, tapioca and wheat were tested. It could be found, that the best nucleation behavior of a sugar solution could be reached with the use of corn starch as seed material. Here the surface of the crystallized sugar layer is smooth, crystallization time is short (<3 h) and the shape of the product is easily reproducible. Beneficial properties of seed materials are therefore an edged, uneven surface, small particle sizes as well as low moisture content at ambient conditions within the seed materials.

Superposition of \\sqrt{13}\\times \\sqrt{13} and 3 × 3 supermodulations in TaS2 probed by scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Fujisawa, Y.; Iwasaki, T.; Fujii, D.; Ohta, S.; Iwashita, J.; Fujita, T.; Nakata, M.; Kishimoto, K.; Demura, S.; Sakata, H.

2018-03-01

We report on a scanning tunnelling microscopy study of TaS2 at 4.2 K. A surface prepared by cleavage showed a superimposed pattern of two types of charge density waves with 3a 0 × 3a 0 and \\sqrt{13}{a}0× \\sqrt{13}{a}0 periodicity, which had never been observed previously. We attribute the superposition to regular stacking of 4H b polytypes or irregular stacking of 2H and 4H b layers.

Seasonal dynamics of the plant community and soil seed bank along a successional gradient in a subalpine meadow on the Tibetan Plateau.

PubMed

Ma, Miaojun; Zhou, Xianhui; Qi, Wei; Liu, Kun; Jia, Peng; Du, Guozhen

2013-01-01

Knowledge about how change the importance of soil seed bank and relationship between seed mass and abundance during vegetation succession is crucial for understanding vegetation dynamics. Many studies have been conducted, but their ecological mechanisms of community assembly are not fully understood. We examined the seasonal dynamics of the vegetation and soil seed bank as well as seed size distribution along a successional gradient. We also explored the potential role of the soil seed bank in plant community regeneration, the relationship between seed mass and species abundance, and the relative importance of deterministic and stochastic processes along a successional gradient. Species richness of seed bank increased (shallow layer and the total) and seed density decreased (each layer and the total) significantly with succession. Species richness and seed density differed significantly between different seasons and among soil depths. Seed mass showed a significant negative relationship with relative abundance in the earliest successional stage, but the relationships were not significant in later stages. Seed mass showed no relationship with relative abundance in the whole successional series in seed bank. Results were similar for both July 2005 and April 2006. The seed mass and abundance relationship was determined by a complex interaction between small and larger seeded species and environmental factors. Both stochastic processes and deterministic processes were important determinants of the structure of the earliest stage. The importance of seed bank decreased with succession. The restoration of abandoned farmed and grazed meadows to the species-rich subalpine meadow in Tibetan Plateau can be successfully achieved from the soil seed bank. However, at least 20 years are required to fully restore an abandoned agricultural meadow to a natural mature subalpine meadow.

Methodological bias in the seed bank flora holds significant implications for understanding seed bank community functions.

PubMed

Plue, J; Colas, F; Auffret, A G; Cousins, S A O

2017-03-01

Persistent seed banks are a key plant regeneration strategy, buffering environmental variation to allow population and species persistence. Understanding seed bank functioning within herb layer dynamics is therefore important. However, rather than assessing emergence from the seed bank in herb layer gaps, most studies evaluate the seed bank functioning via a greenhouse census. We hypothesise that greenhouse data may not reflect seed bank-driven emergence in disturbance gaps due to methodological differences. Failure in detecting (specialist) species may then introduce methodological bias into the ecological interpretation of seed bank functions using greenhouse data. The persistent seed bank was surveyed in 40 semi-natural grassland plots across a fragmented landscape, quantifying seedling emergence in both the greenhouse and in disturbance gaps. Given the suspected interpretational bias, we tested whether each census uncovers similar seed bank responses to fragmentation. Seed bank characteristics were similar between censuses. Census type affected seed bank composition, with >25% of species retrieved better by either census type, dependent on functional traits including seed longevity, production and size. Habitat specialists emerged more in disturbance gaps than in the greenhouse, while the opposite was true for ruderal species. Both censuses uncovered fragmentation-induced seed bank patterns. Low surface area sampling, larger depth of sampling and germination conditions cause underrepresentation of the habitat-specialised part of the persistent seed bank flora during greenhouse censuses. Methodological bias introduced in the recorded seed bank data may consequently have significant implications for the ecological interpretation of seed bank community functions based on greenhouse data. © 2016 German Botanical Society and The Royal Botanical Society of the Netherlands.

Depth Profiles in Maize ( Zea mays L.) Seeds Studied by Photoacoustic Spectroscopy

NASA Astrophysics Data System (ADS)

Hernández-Aguilar, C.; Domínguez-Pacheco, A.; Cruz-Orea, A.; Zepeda-Bautista, R.

2015-06-01

Photoacoustic spectroscopy (PAS) has been used to analyze agricultural seeds and can be applied to the study of seed depth profiles of these complex samples composed of different structures. The sample depth profile can be obtained through the photoacoustic (PA) signal, amplitude, and phase at different light modulation frequencies. The PA signal phase is more sensitive to changes of thermal properties in layered samples than the PA signal amplitude. Hence, the PA signal phase can also be used to characterize layers at different depths. Thus, the objective of the present study was to obtain the optical absorption spectra of maize seeds ( Zea mays L.) by means of PAS at different light modulation frequencies (17 Hz, 30 Hz, and 50 Hz) and comparing these spectra with the ones obtained from the phase-resolved method in order to separate the optical absorption spectra of seed pericarp and endosperm. The results suggest the possibility of using the phase-resolved method to obtain optical absorption spectra of different seed structures, at different depths, without damaging the seed. Thus, PAS could be a nondestructive method for characterization of agricultural seeds and thus improve quality control in the food industry.

Numerical Investigation of PLIF Gas Seeding for Hypersonic Boundary Layer Flows

NASA Technical Reports Server (NTRS)

Johanson, Craig T.; Danehy, Paul M.

2012-01-01

Numerical simulations of gas-seeding strategies required for planar laser-induced fluorescence (PLIF) in a Mach 10 air flow were performed. The work was performed to understand and quantify adverse effects associated with gas seeding and to compare different flow rates and different types of seed gas. The gas was injected through a slot near the leading edge of a flat plate wedge model used in NASA Langley Research Center's 31- Inch Mach 10 Air Tunnel facility. Nitric oxide, krypton, and iodine gases were simulated at various injection rates. Simulation results showing the deflection of the velocity field for each of the cases are presented. Streamwise distributions of velocity and concentration boundary layer thicknesses as well as vertical distributions of velocity, temperature, and mass distributions are presented for each of the cases. Relative merits of the different seeding strategies are discussed.

Spin-filter specular spin valves

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.; Jibouri, A. A.; Zheng, Yaunkai

2002-01-01

Both a thin free layer and high magnetoresistance (MR) ratio are required in spin valves for high magnetic density recording heads. In traditional spin valve structures, reducing the free layer normally results in a reduction in MR. We report here on a spin-filter specular spin valve with structure Ta 3.5 nm/NiFe 2 nm/IrMn 6 nm/CoFe 1.5 nm/Nol/CoFe 2 nm/Cu 2.2 nm/CoFe tF/Cu tSF/Nol2/Ta 3 nm, which is demonstrated to maintain MR ratio higher than 12% even when the CoFe free layer is reduced to 1 nm. The semiclassical Boltzmann transport equation was used to simulate MR ratio. An optimized MR ratio of ˜14.5% was obtained when tF was about 1.5 nm and tSF about 1.0 nm as a result of the balance between the increase in electron mean free path difference and current shunting through conducting layer. It is found that the Cu enhancing layer not only enhances the MR ratio but also improves soft magnetic properties of CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibits a low coercivity of ˜3 Oe even after annealing at 270 °C for 7 h in a field of 1 kOe. Furthermore, the interlayer coupling field Hint between free layer and pinned layer can be controlled by balancing the Rudermann-Kittel-(Kasuya)-Yosida and magnetostatic coupling. Such a thin soft CoFe free layer is particularly attractive for high density read sensor application.

Timing is everything: early degradation of abscission layer is associated with increased seed shattering in U.S. weedy rice

PubMed Central

2011-01-01

Background Seed shattering, or shedding, is an important fitness trait for wild and weedy grasses. U.S. weedy rice (Oryza sativa) is a highly shattering weed, thought to have evolved from non-shattering cultivated ancestors. All U.S. weedy rice individuals examined to date contain a mutation in the sh4 locus associated with loss of shattering during rice domestication. Weedy individuals also share the shattering trait with wild rice, but not the ancestral shattering mutation at sh4; thus, how weedy rice reacquired the shattering phenotype is unknown. To establish the morphological basis of the parallel evolution of seed shattering in weedy rice and wild, we examined the abscission layer at the flower-pedicel junction in weedy individuals in comparison with wild and cultivated relatives. Results Consistent with previous work, shattering wild rice individuals possess clear, defined abscission layers at flowering, whereas non-shattering cultivated rice individuals do not. Shattering weedy rice from two separately evolved populations in the U.S. (SH and BHA) show patterns of abscission layer formation and degradation distinct from wild rice. Prior to flowering, the abscission layer has formed in all weedy individuals and by flowering it is already degrading. In contrast, wild O. rufipogon abscission layers have been shown not to degrade until after flowering has occurred. Conclusions Seed shattering in weedy rice involves the formation and degradation of an abscission layer in the flower-pedicel junction, as in wild Oryza, but is a developmentally different process from shattering in wild rice. Weedy rice abscission layers appear to break down earlier than wild abscission layers. The timing of weedy abscission layer degradation suggests that unidentified regulatory genes may play a critical role in the reacquisition of shattering in weedy rice, and sheds light on the morphological basis of parallel evolution for shattering in weedy and wild rice. PMID:21235796

Timing is everything: early degradation of abscission layer is associated with increased seed shattering in U.S. weedy rice.

PubMed

Thurber, Carrie S; Hepler, Peter K; Caicedo, Ana L

2011-01-14

Seed shattering, or shedding, is an important fitness trait for wild and weedy grasses. U.S. weedy rice (Oryza sativa) is a highly shattering weed, thought to have evolved from non-shattering cultivated ancestors. All U.S. weedy rice individuals examined to date contain a mutation in the sh4 locus associated with loss of shattering during rice domestication. Weedy individuals also share the shattering trait with wild rice, but not the ancestral shattering mutation at sh4; thus, how weedy rice reacquired the shattering phenotype is unknown. To establish the morphological basis of the parallel evolution of seed shattering in weedy rice and wild, we examined the abscission layer at the flower-pedicel junction in weedy individuals in comparison with wild and cultivated relatives. Consistent with previous work, shattering wild rice individuals possess clear, defined abscission layers at flowering, whereas non-shattering cultivated rice individuals do not. Shattering weedy rice from two separately evolved populations in the U.S. (SH and BHA) show patterns of abscission layer formation and degradation distinct from wild rice. Prior to flowering, the abscission layer has formed in all weedy individuals and by flowering it is already degrading. In contrast, wild O. rufipogon abscission layers have been shown not to degrade until after flowering has occurred. Seed shattering in weedy rice involves the formation and degradation of an abscission layer in the flower-pedicel junction, as in wild Oryza, but is a developmentally different process from shattering in wild rice. Weedy rice abscission layers appear to break down earlier than wild abscission layers. The timing of weedy abscission layer degradation suggests that unidentified regulatory genes may play a critical role in the reacquisition of shattering in weedy rice, and sheds light on the morphological basis of parallel evolution for shattering in weedy and wild rice.

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

Modification of the structural and magnetic properties of granular FePt films by seed layer conditioning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wicht, S., E-mail: s.wicht@ifw-dresden.de; TU Dresden, Institut für Werkstoffwissenschaft, Helmholtzstraße 10, D-01069 Dresden; Neu, V.

2015-01-07

The steadily increasing amount of digital information necessitates the availability of reliable high capacity magnetic data storage. Here, future hard disk drives with extended areal storage densities beyond 1.0 Tb/in{sup 2} are envisioned by using high anisotropy granular and chemically L1{sub 0}-ordered FePt (002) perpendicular media within a heat-assisted magnetic recording scheme. Perpendicular texturing of the [001] easy axes of the individual grains can be achieved by using MgO seed layers. It is therefore investigated, if and how an Ar{sup +} ion irradiation of the MgO seed layer prior to the deposition of the magnetic material influences the MgO surfacemore » properties and hereby the FePt [001] texture. Structural investigations reveal a flattening of the seed layer surface accompanied by a change in the morphology of the FePt grains. Moreover, the fraction of small second layer particles and the degree of coalescence of the primarily deposited FePt grains strongly increases. As for the magnetic performance, this results in a reduced coercivity along the magnetic easy axis (out of plane) and in enhanced hard axis (in-plane) remanence values. The irradiation induced changes in the magnetic properties of the granular FePt-C films are traced back to the accordingly modified atomic structure of the FePt-MgO interface region.« less

Improvements in the Formation of Boron-Doped Diamond Coatings on Platinum Wires Using the Novel Nucleation Process (NNP)

PubMed Central

Fhaner, Mathew; Zhao, Hong; Bian, Xiaochun; Galligan, James J.; Swain, Greg M.

2010-01-01

In order to increase the initial nucleation density for the growth of boron-doped diamond on platinum wires, we employed the novel nucleation process (NNP) originally developed by Rotter et al. and discussed by others [1–3]. This pretreatment method involves (i) the initial formation of a thin carbon layer over the substrate followed by (ii) ultrasonic seeding of this “soft” carbon layer with nanoscale particles of diamond. This two-step pretreatment is followed by the deposition of boron-doped diamond by microwave plasma-assisted CVD. Both the diamond seed particles and sites on the carbon layer itself function as the initial nucleation zones for diamond growth from an H2-rich source gas mixture. We report herein on the characterization of the pre-growth carbon layer formed on Pt as well as boron-doped films grown for 2, 4 and 6 h post NNP pretreatment. Results from scanning electron microscopy, Raman spectroscopy and electrochemical studies are reported. The NNP method increases the initial nucleation density on Pt and leads to the formation of a continuous diamond film in a shorter deposition time than is typical for wires pretreated by conventional ultrasonic seeding. The results indicate that the pregrowth layer itself consists of nanoscopic domains of diamond and functions well to enhance the initial nucleation of diamond without any diamond powder seeding. PMID:21617759

H+-induced irradiation damage resistance in Fe- and Ni-based metallic glass

NASA Astrophysics Data System (ADS)

Zhang, Hongran; Mei, Xianxiu; Zhang, Xiaonan; Li, Xiaona; Wang, Yingmin; Sun, Jianrong; Wang, Younian

2016-05-01

In this study, use of 40-keV H+ ion for irradiating metallic glass Fe80Si7.43B12.57 and Ni62Ta38 as well as metallic tungsten (W) at fluences of 1 × 1018 and 3 × 1018 ions/cm2, respectively, was investigated. At the fluence of 1 × 1018 ions/cm2, a crystalline layer appeared in metallic glass Fe80Si7.43B12.57, with α-Fe as the major crystalline phase, coupled with a little Fe2B, Fe3B, and metastable β-Mn-type phase. Fe80Si7.43B12.57 exhibited good soft magnetic properties after irradiation. At the fluence of 3 × 1018 ions/cm2, Ni62Ta38 was found to be amorphous-based, with a little μ-NiTa and Ni3Ta phases. No significant irradiation damage phenomenon appeared in metallic glasses Fe80Si7.43B12.57 and Ni62Ta38. Blistering, flaking, and other damage occurred on the surface of metallic W, and the root-mean-square (RMS) roughness increased with the increase of fluence. Metallic glass Ni62Ta38 exhibited better resistance to H+ irradiation than Fe80Si7.43B12.57, both of which were superior to the metallic W.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

NASA Astrophysics Data System (ADS)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

NASA Astrophysics Data System (ADS)

Rao, Ashwath; Verma, Ankita; Singh, B. R.

2015-06-01

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

2017-08-01

We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500°C, with a contact resistivity of 5.2 × 10-6 Ω cm2. LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2 p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500°C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES.

Experiments on the enhancement of compressible mixing via streamwise vorticity. II - Vortex strength assessment and seed particle dynamics

NASA Technical Reports Server (NTRS)

Naughton, J. W.; Cattafesta, L. N.; Settles, G. S.

1993-01-01

The effect of streamwise vorticity on compressible axisymmetric mixing layers is examined using vortex strength assessment and seed particle dynamics analysis. Experimental results indicate that the particles faithfully represent the dynamics of the turbulent swirling flow. A comparison of the previously determined mixing layer growth rates with the present vortex strength data reveals that the increase of turbulent mixing up to 60 percent scales with the degree of swirl. The mixing enhancement appears to be independent of the compressibility level of the mixing layer.

Passivation on High Q Acoustic Strain Sensor for Accelerometer.

DTIC Science & Technology

1984-11-01

selection of passivation layers. Preliminary results indicated that V203 , (yttrium oxide ) and AIN (aluminum nitride) were the best materials for...thickness selection of passivation layers. Preliminary results indicated that Y203 (yttrium oxide ) and AIN (aluminum nitride) were the best materials...crystal, in this case a parabolic temperature characteristic. Several circuits were designed using varactor diode phase shifting networks. FOjcTl Ta tor

Micro-arc oxidation treatment to improve the hard-tissue compatibility of Ti-29Nb-13Ta-4.6Zr alloy

NASA Astrophysics Data System (ADS)

Tsutsumi, Yusuke; Niinomi, Mitsuo; Nakai, Masaaki; Tsutsumi, Harumi; Doi, Hisashi; Nomura, Naoyuki; Hanawa, Takao

2012-12-01

Micro-arc oxidation (MAO) was performed on a β-type Ti-29Nb-13Ta-4.6Zr alloy (TNTZ) in this study to improve its bioactivity in a body fluid and its hard-tissue compatibility. The surface oxide layer formed on TNTZ by MAO treatment in a mixture of calcium glycerophosphate and magnesium acetate was characterized using various surface analyses. The oxide layer was mainly composed of two types of TiO2 (rutile and anatase), and it also contained Ca, P, and Mg, which were incorporated from the electrolyte during the treatment. The calcium phosphate formation on the surface of the specimens after immersion in Hanks' solution was evaluated to determine the bioactivity of TNTZ with and without MAO treatment. As a result, thick calcium phosphate layers formed on the TNTZ specimen that underwent MAO treatment, whereas only a small amount of precipitate was observed on TNTZ without treatment. Thus, the MAO treatment is a promising method to improve the bioactivity and hard-tissue compatibility of TNTZ.

Heavy Metal Uptake by C. esculentus, S. alterniflora and Agronomic Plants from Contaminated Soils and Sediments.

DTIC Science & Technology

1982-02-28

in March and potted in April. Seed sowing will ta..-e place in mid-May. The species sown will include a grass. wheat, lettuce and radish and C... effects varied. Soe started negativeLy, and became positive; others remained negative ( radish ), and others were positive aLl the time (wheat). ALL...agronomic plants selected were radish (Webb’s French Break- fast), lettuce (Paris White), wheat (spring), red fescue (Merlin) and ryegrass (S24). Each

DARPA Advanced High Current Density Cathodes for Defense Applications: Development Phase

DTIC Science & Technology

1993-03-01

Project Number 01-0624-07-0857 Report Number SAIC-93/1018 March 1, 1993 Science Apphcations Internatia Corporation An Employee-Owned Company OTIC a...Density Cathodes for Defense Applications: Development Phase FINAL REPORT Contract Number N00014-90-C-2118 Project Number 01-0624-07-0857 Report...of a typical Si-TaSi2 boule used for the eutectic advanced cathode materials in this project . The seed for the boule is at right in the photograph. v

7 CFR 52.1852 - Grades of raisins with seeds-except layer or cluster.

Code of Federal Regulations, 2010 CFR

2010-01-01

...) “U.S. Grade A” is the quality of Raisins with Seeds that have similar varietal characteristics; that... requirements as outlined in Table II of this subpart. (b) “U.S. Grade B” is the quality of Raisins with Seeds... in Table II of this subpart. (c) “U.S. Grade C” is the quality of Raisins with Seeds that have...

Influences of the residual argon gas and thermal annealing on Ta2O5 and SiO2 thin film filters

NASA Astrophysics Data System (ADS)

Liu, Wen-Jen; Chen, Chih-Min; Lai, Yin-Chieh

2005-04-01

Ion beam assisted deposition (IBAD) technique had widely used for improving stacking density and atomic mobility of thin films in many applications, especially adopted in optical film industries. Tantalum pentaoxide (Ta2O5) and silicon oxides (SiO2) optical thin films were deposited on the quartz glass substrate by using argon ion beam assisted deposition, and the influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of the thin films were investigated in this study. Ta2O5 thin films were analyzed by XPS indicated that the ratio value of oxygen to tantalum was insufficient, at the same time, the residual argon gas in the thin films might result in film and device instabilities. Adopting oxygen-thermal annealing treatment at the temperature of 425°C, the thin films not only decreased the residual argon gas and the surface roughness, but also provided the sufficient stoichiometric ratio. Simultaneously, microstructure examination indicated few nano-crystallized structures and voids existed in Ta2O5 thin films, and possessed reasonable refractive index and lower extinction coefficient. By the way, we also suggested the IBAD system using the film compositional gas ion beam to replace the argon ion beam for assisting deposited optical films. The designed (HL)6H6LH(LH)6 multi-layers indicated higher insertion loss than the designed (HL)68H(LH)6 multi-layers. Therefore, using the high refractive index as spacer material represented lower insertion loss.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition.

PubMed

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D; Renevier, Hubert; Consonni, Vincent

2017-03-03

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 10 7 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

NASA Astrophysics Data System (ADS)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscaleengineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol–gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on themore » macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscaleengineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.« less

Interfacial Metal-Oxide Interactions in Resistive Switching Memories.

PubMed

Cho, Deok-Yong; Luebben, Michael; Wiefels, Stefan; Lee, Kug-Seung; Valov, Ilia

2017-06-07

Metal oxides are commonly used as electrolytes for redox-based resistive switching memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We demonstrate that irrespective of bulk thermodynamics predictions an intermediate oxide film a few nanometers in thickness is always formed at the metal/insulator interface, and this layer significantly contributes to the development of reliable switching characteristics. We have tested metal electrodes and metal oxides mostly used for memristive devices, that is, Ta, Hf, and Ti and Ta 2 O 5 , HfO 2 , and SiO 2 . Intermediate oxide layers are always formed at the interfaces, whereas only the rate of the electrode oxidation depends on the oxygen affinity of the metal and the chemical stability of the oxide matrix. Device failure is associated with complete transition of short-range order to a more disordered main matrix structure.

Hydrogen gas sensors using a thin Ta2O5 dielectric film

NASA Astrophysics Data System (ADS)

Kim, Seongjeen

2014-12-01

A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

Processing Ti-25Ta-5Zr Bioalloy via Anodic Oxidation Procedure at High Voltage

NASA Astrophysics Data System (ADS)

Ionita, Daniela; Grecu, Mihaela; Dilea, Mirela; Cojocaru, Vasile Danut; Demetrescu, Ioana

2011-12-01

The current paper reports the processing of Ti-25Ta-5Zr bioalloy via anodic oxidation in NH4BF4 solution under constant potentiostatic conditions at high voltage to obtain more suitable properties for biomedical application. The maximum efficiency of the procedure is reached at highest applied voltage, when the corrosion rate in Hank's solution is decreased approxomately six times. The topography of the anodic layer has been studied using atomic force microscopy (AFM), and the results indicated that the anodic oxidation process increases the surface roughness. The AFM images indicated a different porosity for the anodized surfaces as well. After anodizing, the hydrophilic character of Ti-25Ta-5Zr samples has increased. A good correlation between corrosion rate obtained from potentiodynamic curves and corrosion rate from ions release analysis was obtained.

Vortex phase diagram of the layered superconductor Cu0.03TaS2 for H \\parallel c

NASA Astrophysics Data System (ADS)

Zhu, X. D.; Lu, J. C.; Sun, Y. P.; Pi, L.; Qu, Z.; Ling, L. S.; Yang, Z. R.; Zhang, Y. H.

2010-12-01

The magnetization and anisotropic electrical transport properties have been measured in high quality Cu0.03TaS2 single crystals. A pronounced peak effect has been observed, indicating that high quality and homogeneity are vital to the peak effect. A kink has been observed in the magnetic field, H, dependence of the in-plane resistivity ρab for H\\parallel c , which corresponds to a transition from activated to diffusive behavior of the vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity ρab is proportional to H0.3, which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu0.03TaS2 for H \\parallel c is given.

Synthesis and Characterization of Antireflective ZnO Nanoparticles Coatings Used for Energy Improving Efficiency of Silicone Solar Cells

NASA Astrophysics Data System (ADS)

Pîslaru-Dănescu, Lucian; Chitanu, Elena; El-Leathey, Lucia-Andreea; Marinescu, Virgil; Marin, Dorian; Sbârcea, Beatrice-Gabriela

2018-05-01

The paper proposes a new and complex process for the synthesis of ZnO nanoparticles for antireflective coating corresponding to silicone solar cells applications. The process consists of two major steps: preparation of seed layer and hydrothermal growth of ZnO nanoparticles. Due to the fact that the seed layer morphology influences the ZnO nanoparticles proprieties, the process optimization of the seed layer preparation is necessary. Following the hydrothermal growth of the ZnO nanoparticles, antireflective coating of silicone solar cells is achieved. After determining the functional parameters of the solar cells provided either with glass or with ZnO, it is concluded that all the parameters values are superior in the case of solar cells with ZnO antireflection coating and are increasing along with the solar irradiance.

Seed bank and established vegetation in the last remnants of the Mexican Central Plateau wetlands: the Lerma marshes.

PubMed

Zepeda, Carmen; Lot, Antonio; Nemiga, Xanat Antonio; Manjarrez, Javier

2014-06-01

Seed banks play a central role in vegetation dynamics of many wetlands. Therefore, knowledge of seed reservoirs in the soils of aquatic communities should provide useful tools for conservation and restoration efforts. This study was conducted in the Lerma marshes, one of the last remnants of the vast wetlands that were once in the Mexican Central Plateau. The main objective was to determine the composition and abundance of seed bank and its relationship with established vegetation of the three Lerma marshes. In each marsh, we systematically selected 18 to 40 sampling sites. In each site, the composition of vascular plant vegetation was evaluated in two 10m lines perpendicular to the shore. Every 0.5m, we determined the coverage of species by measuring the intercepted length for each plant or group of plants. At each sampling site where we had evaluated the established vegetation, we collected a sample of the top 10cm of sediment; the soil cores were divided into an upper layer (0-5cm) and a lower layer (5-10cm). These samples were used to evaluate the seed bank by the seedling emergence method. All samples were placed in a greenhouse at 20-25 degrees C and remained flooded for 15 weeks. Forty-nine species were recorded in the vegetation. Chiconahuapan had the richest and most diverse flora and the greatest number of perennial species. A life-forms analysis showed that perennial herbs, especially rooted-emergent hydrophytes, dominated in the three wetlands. Sixty-one species were identified in the total seed bank; Chimaliapan had the most diverse total seed bank, whereas the mean seedling density was higher in Chignahuapan. Only two species of the total seed bank of each marsh had a density greater than 10% of the total, and more than half were uncommon. The upper layer of sediment (0-5cm) contained two times more seeds/m2 and species per sample than the lower layer (5-10cm), and there was a significant decrease of seed density with depth. The detrended correspondence analysis produced a clear separation between the composition of the seed banks and established vegetation. In general, in each marsh there was less species diversity in the established vegetation than in the seed bank. Dominance by a few species in the seed bank, the presence of opportunistic species, and the low representation of established species in the seed bank suggest wetland degradation and a low probability of regenerating the natural communities from the seed bank. To ensure the permanence of these marshes, their biodiversity, and therefore the environmental services they provide, up to date planning is a must, and efforts to control and monitor hydrology, water quality, and the influence of human activities are suggested.

Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays

NASA Astrophysics Data System (ADS)

Kosiel, K.; Dominik, M.; Ściślewska, I.; Kalisz, M.; Guziewicz, M.; Gołaszewska, K.; Niedziółka-Jonsson, J.; Bock, W. J.; Śmietana, M.

2018-04-01

This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf x O y with y/x approx. 2.70), tantalum oxide (Ta x O y with y/x approx. 2.75) and zirconium oxide (Zr x O y with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf x O y (0.145 ± 0.001 nm/cycle) and the poorest for Ta x O y (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr x O y . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ˜0.5 nm (at 10 × 10 μm2 area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr x O y layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf x O y and the Ta x O y than for the Zr x O y . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than Al2O3. The Ta x O y overlay was deposited on long-period grating sensor induced in optical fiber. Thanks to such an overlay the sensor proved to be long-lasting resistant when exposed to alkaline environment with a pH 9. Thereby, it also proved that it has a potential to be repeatedly reused as a regenerable optical fiber biosensor.

Microstructure and abrasive wear test of different composite layers formed by laser coating

NASA Astrophysics Data System (ADS)

Bartos, J.

1994-09-01

Layers containing different particles of different sizes (TiC: 2,7 micrometers and 31 micrometers mid size; TaC: 15 micrometers mid size) were formed on the surface of 90 MnCrV8 tool steel. A CO2-gas laser equipment was used to form these layers. The grain contents of the layers were between 35% - 55%. Some of the ready TiC layers were hardened by laser in order to reduce the retained amount. We compared the wear resistance of the layers employing abrasive wheel test. For reference purposes we carried out the test of traditionally hardened, traded TICALLOY II and TICALLOY W materials as well.

Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{submore » 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.« less

Titanium nitride as a seed layer for Heusler compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niesen, Alessia, E-mail: aniesen@physik.uni-bielefeld.de; Glas, Manuel; Ludwig, Jana

Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn{sub 2.45}Ga as well as in- and out-of-plane magnetized Co{sub 2}FeAl thin films were depositedmore » on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn{sub 2.45}Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co{sub 2}FeAl. TiN buffered Mn{sub 2.45}Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co{sub 2}FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.« less

Differences in cytocompatibility, dynamics of the oxide layers' formation, and nickel release between superelastic and thermo-activated nickel-titanium archwires.

PubMed

Čolić, Miodrag; Tomić, Sergej; Rudolf, Rebeka; Marković, Evgenija; Šćepan, Ivana

2016-08-01

Superelastic (SE) and thermo-activated (TA) nickel-titanium (NiTi) archwires are used in everyday orthodontic practice, based on their acceptable biocompatibility and well-defined shape memory properties. However, the differences in their surface microstructure and cytotoxicity have not been clearly defined, and the standard cytotoxicity tests are too robust to detect small differences in the cytotoxicity of these alloys, all of which can lead to unexpected adverse reactions in some patients. Therefore, we tested the hypothesis that the differences in manufacture and microstructure of commercially available SE and TA archwires may influence their biocompatibility. The archwires were studied as-received and after conditioning for 24 h or 35 days in a cell culture medium under static conditions. All of the tested archwires, including their conditioned medium (CM), were non-cytotoxic for L929 cells, but Rematitan SE (both as received and conditioned) induced the apoptosis of rat thymocytes in a direct contact. In contrast, TruFlex SE and Equire TA increased the proliferation of thymocytes. The cytotoxic effect of Rematitan SE correlated with the higher release of Ni ions in CM, higher concentration of surface Ni and an increased oxygen layer thickness after the conditioning. In conclusion, the apoptosis assay on rat thymocytes, in contrast to the less sensitive standard assay on L929 cells, revealed that Rematitan SE was less cytocompatible compared to other archwires and the effect was most probably associated with a higher exposition of the cells to Ni on the surface of the archwire, due to the formation of unstable oxide layer.

Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator

NASA Astrophysics Data System (ADS)

Inoue, Tomoyasu; Hamasaki, Toshihiko

1987-04-01

A high-speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed opening, which is due to nonuniformity in heat dissipation toward the substrate in the vicinity of the seed opening. The molten zone width and velocities of the melt front and growth front were quantitatively analyzed using digital film motion analysis. The growth front velocity was found to drastically change by ˜30% across the seed opening.

Cracks in the palisade cuticle of soybean seed coats correlate with their permeability to water.

PubMed

Ma, Fengshan; Cholewa, Ewa; Mohamed, Tasneem; Peterson, Carol A; Gijzen, Mark

2004-08-01

Soybean (Glycine max) is among the many legumes that are well known for 'hardseededness'. This feature can be beneficial for long-term seed survival, but is undesirable for the food processing industry. There is substantial disagreement concerning the mechanisms and related structures that control the permeability properties of soybean seed coats. In this work, the structural component that controls water entry into the seed is identified. Six soybean cultivars were tested for their seed coat permeabilities to water. To identify the structural feature(s) that may contribute to the determination of these permeabilities, fluorescent tracer dyes, and light and electron microscopic techniques were used. The cultivar 'Tachanagaha' has the most permeable seed coat, 'OX 951' the least permeable seed coat, and the permeabilities of the rest ('Harovinton', 'Williams', 'Clark L 67-3469', and 'Harosoy 63') are intermediate. All seeds have surface deposits, depressions, a light line, and a cuticle about 0.2 microm thick overlaying the palisade layer. In permeable cultivars the cuticle tends to break, whereas in impermeable seeds of 'OX 951' it remains intact. In the case of permeable seed coats, the majority of the cracks are from 1 to 5 micro m wide and from 20 to 200 micro m long, and occur more frequently on the dorsal side than in other regions of the seed coat, a position that correlates with the site of initial water uptake. The cuticle of the palisade layer is the key factor that determines the permeability property of a soybean seed coat. The cuticle of a permeable seed coat is mechanically weak and develops small cracks through which water can pass. The cuticle of an impermeable seed coat is mechanically strong and does not crack under normal circumstances.

Sexual and vegetative propagation of the medicinal Mexican species Phyllonoma laticuspis (Phyllonomaceae).

PubMed

Alcántara-Flores, Ela; Brechú-Franco, Alicia E; Villegas-Monter, Angel; Laguna-Hernández, Guillermo; Gómez-Campos, Armando

2017-03-01

Phyllonoma laticuspis leaves are used in Carrizal de Bravo, Guerrero, Mexico, to heal skin lesions such as injuries and smallpox sequelae and to treat diabetes mellitus type 2, and organic extracts of these leaves have been reported to exert antibacterial effects. High demand of P. laticuspis as a medicinal plant has decreased its natural populations, and propagation of the species has not yet been reported. Therefore, the purpose of this study was to assess the vegetative propagation of the species through cutting and air layering, as well as its sexual propagation in a preserved population. For this, concentrations of 1 000, 4 000 and 6 000 ppm of a commercial root enhancer, with indole butyric acid (IBA), and a control treatment without IBA, were applied to the cuttings and air layers. Germination was evaluated under light and dark conditions using lots of freshly collected seeds and lots of seeds that had been stored for three months at 4 °C or 24 ± 2 °C. All experiments were performed in a completely randomized design. The cuttings did not develop roots in any concentration, whereas 100 % of the air layers rooted, displaying vigorous roots in the presence of 4 000 ppm IBA, after four month of treatment application. Regarding germination, more than 60 % of the freshly collected seeds germinated, whereas less than 20 % of the seeds stored at 4 °C, and close to 50 % of the seeds stored at 24 ± 2 °C germinated under light and dark conditions. No significant differences were observed between light and dark conditions, so they were categorized as indifferent photoblastic seeds. The observed moisture content of 13.5 % and germination behaviour as the response to cold storage, suggest that the resultant seed quality was intermediate. P. laticuspis propagation for short-term foliage production can be carried out in air layers, in populations with a high density of adult plants as a source of plant material and for the restoration of disturbed areas, in the same locality. On the other hand, large-scale seedling production, medium-term foliage production and preservation of species variability can be achieved using seeds.

Surface chirality of CuO thin films.

PubMed

Widmer, Roland; Haug, Franz-Josef; Ruffieux, Pascal; Gröning, Oliver; Bielmann, Michael; Gröning, Pierangelo; Fasel, Roman

2006-11-01

We present X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD) investigations of CuO thin films electrochemically deposited on an Au(001) single-crystal surface from a solution containing chiral tartaric acid (TA). The presence of enantiopure TA in the deposition process results in a homochiral CuO surface, as revealed by XPD. On the other hand, XPD patterns of films deposited with racemic tartaric acid or the "achiral" meso-tartaric acid are completely symmetric. A detailed analysis of the experimental data using single scattering cluster calculations reveals that the films grown with l(+)-TA exhibit a CuO(1) orientation, whereas growth in the presence of d(-)-TA results in a CuO(11) surface orientation. A simple bulk-truncated model structure with two terminating oxygen layers reproduces the experimental XPD data. Deposition with alternating enantiomers of tartaric acid leads to CuO films of alternating chirality. Enantiospecifity of the chiral CuO surfaces is demonstrated by further deposition of CuO from a solution containing racemic tartaric acid. The pre-deposited homochiral films exhibit selectivity toward the same enantiomeric deposition pathway.

Thermal stability of spin valves based on a synthetic antiferromagnet and Fe50Mn50 alloy

NASA Astrophysics Data System (ADS)

Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Chernyshova, T. A.; Blagodatkov, D. V.; Kamenskii, I. Yu.; Ustinov, V. V.

2015-11-01

Magnetron sputtering was used to prepare spin valves with the Ta/Ni80Fe20/Co90Fe10/Cu/Co90Fe10/Ru/Co90Fe10/Fe50Mn50/Ta composition. Changes in the functional characteristics of the spin valves were studied in a temperature range of-180 to +160°C. The maximum temperature at which the functional characteristics of spin valve remain unchanged was shown to depend on the relationship of thicknesses of Co90Fe10 layers separated by the Ru interlayer.

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Reduced thermal conductivity by nanoscale intergrowths in perovskite like layered structure La{sub 2}Ti{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaliq, Jibran; Chen, Kan; Li, Chunchun

2015-02-21

The effect of substitution and oxidation-reduction on the thermal conductivity of perovskite-like layered structure (PLS) ceramics was investigated in relation to mass contrast and non-stoichiometry. Sr (acceptor) was substituted on the A site, while Ta (donor) was substituted on the B site of La{sub 2}Ti{sub 2}O{sub 7}. Substitution in PLS materials creates atomic scale disorders to accommodate the non-stoichiometry. High resolution transmission electron microscopy and X ray diffraction revealed that acceptor substitution in La{sub 2}Ti{sub 2}O{sub 7} produced nanoscale intergrowths of n = 5 layered phase, while donor substitution produced nanoscale intergrowths of n = 3 layered phase. As a result of these nanoscalemore » intergrowths, the thermal conductivity value reduced by as much as ∼20%. Pure La{sub 2}Ti{sub 2}O{sub 7} has a thermal conductivity value of ∼1.3 W/m K which dropped to a value of ∼1.12 W/m K for Sr doped La{sub 2}Ti{sub 2}O{sub 7} and ∼0.93 W/m K for Ta doped La{sub 2}Ti{sub 2}O{sub 7} at 573 K.« less

Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2018-01-01

GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

One-Seeded Fruits in the Core Caryophyllales: Their Origin and Structural Diversity

PubMed Central

Sukhorukov, Alexander P.; Mavrodiev, Evgeny V.; Struwig, Madeleen; Nilova, Maya V.; Dzhalilova, Khalima Kh.; Balandin, Sergey A.; Erst, Andrey; Krinitsyna, Anastasiya A.

2015-01-01

The core Caryophyllales consist of approximately 30 families (12 000 species) distributed worldwide. Many members evolved one-seeded or conjoined fruits, but their origin and structural diversity have not been investigated. A comparative anatomical investigation of the one-seeded fruits within the core Caryophyllales was conducted. The origin of the one-seeded fruits and the evolutionary reconstructions of some carpological characters were traced using a tree based on rbcl and matK data in order to understand the ancestral characters and their changes. The one-seeded fruit type is inferred to be an ancestral character state in core Caryophyllales, with a subsequent increase in the seed number seen in all major clades. Most representatives of the ‘Earlier Diverging’ clade are distinguished in various carpological traits. The organization of the pericarp is diverse in many groups, although fruits with a dry, many-layered pericarp, consisting of sclerenchyma as outer layers and a thin-walled parenchyma below, with seeds occupying a vertical embryo position, are likely ancestral character states in the core Caryophyllales clade. Several carpological peculiarities in fruit and seed structure were discovered in obligate one-seeded Achatocarpaceae, Chenopodiaceae, Nyctaginaceae, Seguieriaceae and Sarcobataceae. The horizontal embryo evolved in only certain groups of Chenopodiaceae. The bar-thickening of endotegmen cells appears to be an additional character typical of core Caryophyllales. The syncarpy-to-lysicarpy paradigm in Caryophyllaceae needs to be reinterpreted. PMID:25710481

Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers

NASA Astrophysics Data System (ADS)

Lohaus, Christian; Steinert, Céline; Deyu, Getnet; Brötz, Joachim; Jaegermann, Wolfram; Klein, Andreas

2018-04-01

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300 S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

Theoretical studies on leaky-SAW properties influenced by layers on anisotropic piezoelectric crystals.

PubMed

Wallner, P; Ruile, W; Weigel, R

2000-01-01

Theoretical studies on the behavior of leaky-SAW (LSAW) properties in layered structures were performed. For these calculations rotYX LiTaO (3) and rotYX LiNbO(3) LSAW crystal cuts were used, assuming different layer materials. For LSAWs both the velocity and the inherent loss due to bulk wave emission into the substrate are strongly influenced by distinct layer parameters. As a result, these layer properties like elastic constants or thickness have shown a strong influence on the crystal cut angle of minimum LSAW loss. Moreover, for soft and stiff layer materials, a different shift of the LSAW loss minimum can occur. Therefore, using double-layer structures, the shift of the LSAW loss minimum can be influenced by appropriate chosen layers and ratios.

[Dynamics of seed rain of Tripterygium hypoglaucum and soil seed bank].

PubMed

Zhang, Zhi-Wei; Wei, Yong-Sheng; Liu, Xiang; Su, Shu; Qu, Xian-You; Wang, Chang-Hua

2017-11-01

Tripterygium hypoglaucum is an endangered species in arid areas of Xiannvshan Chongqing, China. The dynamic characteristics of seed rain and soil seed bank of T. hypoglaucum were studied in this paper．Results showed that T. hypoglaucum years of mature seeds distribution number up to October; the seed rain occurred from the last ten-day of September to in the first ten-day of November and the peak of scattered seed rain concentrated in the October．The numbers of soil seed bank at 2-5 cm soil layer,mainly concentrated in the 1.5-3.5 m range. T. hypoglaucum seeds to the wind as a force for transmission, the transmission ability is strong, but in the process of natural reproduction, full mature seed rate is low, the soil seed bank seeds seed short-lived factors these were unfavorable for the natural reproduction of T. hypoglaucum population. Copyright© by the Chinese Pharmaceutical Association.

Stress-Inducible Expression of an F-box Gene TaFBA1 from Wheat Enhanced the Drought Tolerance in Transgenic Tobacco Plants without Impacting Growth and Development.

PubMed

Kong, Xiangzhu; Zhou, Shumei; Yin, Suhong; Zhao, Zhongxian; Han, Yangyang; Wang, Wei

2016-01-01

E3 ligase plays an important role in the response to many environment stresses in plants. In our previous study, constitutive overexpression of an F-box protein gene TaFBA1 driven by 35S promoter improved the drought tolerance in transgenic tobacco plants, but the growth and development in transgenic plants was altered in normal conditions. In this study, we used stress-inducible promoter RD29A instead of 35S promoter, as a results, the stress-inducible transgenic tobacco plants exhibit a similar phenotype with wild type (WT) plants. However, the drought tolerance of the transgenic plants with stress-inducible expressed TaFBA1 was enhanced. The improved drought tolerance of transgenic plants was indicated by their higher seed germination rate and survival rate, greater biomass and photosynthesis than those of WT under water stress, which may be related to their greater water retention capability and osmotic adjustment. Moreover, the transgenic plants accumulated less reactive oxygen species, kept lower MDA content and membrane leakage under water stress, which may be related to their higher levels of antioxidant enzyme activity and upregulated gene expression of some antioxidant enzymes. These results suggest that stress induced expression of TaFBA1 confers drought tolerance via the improved water retention and antioxidative compete ability. Meanwhile, this stress-inducible expression strategy by RD29A promoter can minimize the unexpectable effects by 35S constitutive promoter on phenotypes of the transgenic plants.

Enhanced spin-valve giant magneto-resistance in non-exchange biased sandwich films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mao, M; Cerjan, C; Law, B

2000-02-17

A large giant magnetoresistance (GMR) value of 7.5% has been measured in simple NiFeCo(1)/Cu/NiFeCo(2) sandwich films grown on a 30 {angstrom} Cr seed layer. This spin-valve GMR effect is consistent with the differential switching of the two NiFeCo layers due to an enhanced coercivity of the NiFeCo(1) layer grown on the Cr seed layer. A change in growth texture of the NiFeCo(1) layer from fcc (111) to bcc (110) crystallographic orientation leads to an increase in magnetic anisotropy and an enhancement in coercivity. The GMR value increases to 8.7% when a thin CoFe interfacial enhancing layer is incorporated. Further enhancementmore » in GMR values up to 14% is seen in the sandwich films by nano-oxide layer formation. The specular reflection at oxide/magnetic layer interface further extends the mean free path of spin-polarized electrons.« less

Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

NASA Astrophysics Data System (ADS)

Dunz, M.; Schmalhorst, J.; Meinert, M.

2018-05-01

We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

Electric field modulated ferromagnetism in ZnO films deposited at room temperature

NASA Astrophysics Data System (ADS)

Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan

2018-04-01

The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied.

Vortex phase diagram of the layered superconductor Cu0.03TaS2 for H is parallel to c.

PubMed

Zhu, X D; Lu, J C; Sun, Y P; Pi, L; Qu, Z; Ling, L S; Yang, Z R; Zhang, Y H

2010-12-22

The magnetization and anisotropic electrical transport properties have been measured in high quality Cu(0.03)TaS(2) single crystals. A pronounced peak effect has been observed, indicating that high quality and homogeneity are vital to the peak effect. A kink has been observed in the magnetic field, H, dependence of the in-plane resistivity ρ(ab) for H is parallel to c, which corresponds to a transition from activated to diffusive behavior of the vortex liquid phase. In the diffusive regime of the vortex liquid phase, the in-plane resistivity ρ(ab) is proportional to H(0.3), which does not follow the Bardeen-Stephen law for free flux flow. Finally, a simplified vortex phase diagram of Cu(0.03)TaS(2) for H is parallel to c is given.

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Influence of nano-oxide layers on IrMn pinned bottom spin-valves at different positions

NASA Astrophysics Data System (ADS)

Qiu, J. J.; Li, K. B.; Luo, P.; Zheng, Y. K.; Wu, Y. H.

2004-05-01

The influence of nano-oxide layer (NOL) inserted at different positions on interlayer coupling (Hin), coercivity of free layer (Hcf), exchange bias (Hex) and MR ratio of IrMn pinned bottom type spin-valves (SV) were studied. Weak antiferromagnetic interlayer coupling was observed in NOL-added SV. The NOL inside pinned layer and after free layer can enhance the MR ratio remarkably. MR of SV with a structure Ta3/NiFe2/IrMn6/CoFe1/NOL/CoFe2.3/Cu2.2/CoFe2.3/AlO reached 18.2%. This is one of the best values ever reported for all-metal single spin-valves.

Thickness-dependent enhancement of damping in C o2FeAl /β -Ta thin films

NASA Astrophysics Data System (ADS)

Akansel, Serkan; Kumar, Ankit; Behera, Nilamani; Husain, Sajid; Brucas, Rimantas; Chaudhary, Sujeet; Svedlindh, Peter

2018-04-01

In the present work C o2FeAl (CFA) thin films were deposited by ion beam sputtering on Si (100) substrates at the optimized deposition temperature of 300 °C. A series of CFA films with different thicknesses (tCFA), 8, 10, 12, 14, 16, 18, and 20 nm, were prepared and all samples were capped with a 5-nm-thick β-Ta layer. The thickness-dependent static and dynamic properties of the films were studied by SQUID magnetometry, in-plane as well as out-of-plane broadband vector network analyzer-ferromagnetic resonance (FMR) measurements, and angle-dependent cavity FMR measurements. The saturation magnetization and the coercive field were found to be weakly thickness dependent and lie in the range 900-950 kA/m and 0.53-0.87 kA/m, respectively. The effective damping parameter (αeff) extracted from in-plane and out-of-plane FMR results reveals a 1/tCFA dependence, the values for the in-plane αeff being larger due to two-magnon scattering (TMS). The origin of the αeff thickness dependence is spin pumping into the nonmagnetic β-Ta layer and in the case of the in-plane αeff, also a thickness-dependent TMS contribution. From the out-of-plane FMR results, it was possible to disentangle the different contributions to αeff and to the extract values for the intrinsic Gilbert damping (αG) and the effective spin-mixing conductance (geff↑↓) of the CFA/ β-Ta interface, yielding αG=(1.1 ±0.2 ) ×10-3 and geff↑↓=(2.90 ±0.10 ) ×1019m-2 .

Cobalt-based multilayers with ultrathin seedlayers for perpendicular magnetic recording media

NASA Astrophysics Data System (ADS)

Peng, Wenbin

With the rapid increase in areal density in longitudinal magnetic recording, it is widely believed that the superparamagnetic limit will soon be reached. Perpendicular magnetic recording is now being seriously considered to be a candidate for the replacement. Co/Pd and Co/Pt multilayers are promising candidates because of their high anisotropy, high coercivity, high remanent squareness, and high negative nucleation field. However, Co/Pd and Co/Pt multilayers usually require thick seed layers to promote perpendicular anisotropies, which leads to large "spacing loss". In this work, different seed layers were studied and it showed that an amorphous indium tin oxide (ITO) seed layer as thin as 2nm could promote good perpendicular anisotropy. The processing parameters for Co-based multilayers such as deposition pressure, temperature, individual layer thickness, and number of bilayers were optimized to obtain better interfaces, higher coercivity, and higher anisotropies. Boron was added as dopants into Co layers to obtain better intergranular segregation and reduce the grain growth during the thin film deposition. The substrates were heated to promote the migration of boron atoms. It was proved that the addition of boron has successfully reduced the magnetic domain sizes as well as the media noise. Spin stand test showed that the CoB/Pd multilayers with 2nm ITO seed layer and 6mum thick NiFe soft underlayers deposited at 230°C gave a D50 of 340 kfci for differentiated output signals and an areal density of 11 Gb/in2 at a bit-error-rate of 10 -7. Given narrower heads, better soft underlayer, and lower flying height, the media can reach a much higher recording density.

Capping Layer (CL) Induced Antidamping in CL/Py/β-W System (CL: Al, β-Ta, Cu, β-W).

PubMed

Behera, Nilamani; Guha, Puspendu; Pandya, Dinesh K; Chaudhary, Sujeet

2017-09-13

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (α eff ) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/β-W(t W )/Si (Py = Ni 81 Fe 19 and t W = thickness of β-W), which is in contrast to the increase of α eff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/β-W(t W )/Si system. Because of spin pumping, the interfacial spin mixing conductance (g ↑↓ ) at Py/β-W interface and spin diffusion length (λ SD ) of β-W are found to be 1.63(±0.02) × 10 18 m -2 (1.44(±0.02) × 10 18 m -2 ) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/β-W(t W )/Si (β-W(t W )/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, β-W(2 nm), Cu(2 nm), and β-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/β-W(t W ). However, antidamping is seen only in β-Ta(2,3 nm)/Py(15 nm)/β-W(t W )/Si. This decrease in α eff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and β-W(t W ) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of α eff is observed, which is ascribed to spin pumping from Py to β-W layer.

On buffer layers as non-reflecting computational boundaries

NASA Technical Reports Server (NTRS)

Hayder, M. Ehtesham; Turkel, Eli L.

1996-01-01

We examine an absorbing buffer layer technique for use as a non-reflecting boundary condition in the numerical simulation of flows. One such formulation was by Ta'asan and Nark for the linearized Euler equations. They modified the flow inside the buffer zone to artificially make it supersonic in the layer. We examine how this approach can be extended to the nonlinear Euler equations. We consider both a conservative and a non-conservative form modifying the governing equations in the buffer layer. We compare this with the case that the governing equations in the layer are the same as in the interior domain. We test the effectiveness of these buffer layers by a simulation of an excited axisymmetric jet based on a nonlinear compressible Navier-Stokes equations.

A Single-Nucleotide Polymorphism in an Endo-1,4-β-Glucanase Gene Controls Seed Coat Permeability in Soybean

PubMed Central

Jang, Seong-Jin; Sato, Masako; Sato, Kei; Jitsuyama, Yutaka; Fujino, Kaien; Mori, Haruhide; Takahashi, Ryoji; Benitez, Eduardo R.; Liu, Baohui; Yamada, Tetsuya; Abe, Jun

2015-01-01

Physical dormancy, a structural feature of the seed coat known as hard seededness, is an important characteristic for adaptation of plants against unstable and unpredictable environments. To dissect the molecular basis of qHS1, a quantitative trait locus for hard seededness in soybean (Glycine max (L) Merr.), we developed a near-isogenic line (NIL) of a permeable (soft-seeded) cultivar, Tachinagaha, containing a hard-seed allele from wild soybean (G. soja) introduced by successive backcrossings. The hard-seed allele made the seed coat of Tachinagaha more rigid by increasing the amount of β-1,4-glucans in the outer layer of palisade cells of the seed coat on the dorsal side of seeds, known to be a point of entrance of water. Fine-mapping and subsequent expression and sequencing analyses revealed that qHS1 encodes an endo-1,4-β-glucanase. A single-nucleotide polymorphism (SNP) introduced an amino acid substitution in a substrate-binding cleft of the enzyme, possibly reducing or eliminating its affinity for substrates in permeable cultivars. Introduction of the genomic region of qHS1 from the impermeable (hard-seeded) NIL into the permeable cultivar Kariyutaka resulted in accumulation of β-1,4-glucan in the outer layer of palisade cells and production of hard seeds. The SNP allele found in the NIL was further associated with the occurrence of hard seeds in soybean cultivars of various origins. The findings of this and previous studies may indicate that qHS1 is involved in the accumulation of β-1,4-glucan derivatives such as xyloglucan and/or β-(1,3)(1,4)-glucan that reinforce the impermeability of seed coats in soybean. PMID:26039079

Germination and emergence of annual species and burial depth: Implications for restoration ecology

NASA Astrophysics Data System (ADS)

Limón, Ángeles; Peco, Begoña

2016-02-01

Due to the high content of viable seeds, topsoil is usually spread on ground left bare during railway and motorway construction to facilitate the regeneration of vegetation cover. However, during handling of the topsoil, seeds are often buried deeply and they cannot germinate or the seedlings cannot emerge from depth. This study experimentally explores the predictive value of seed mass for seed germination, mortality and seedling emergence at different burial depths for 13 common annual species in semiarid Mediterranean environments. We separate the effect of burial depth on germination and emergence by means of two experiments. In the germination experiment, five replicates of 20 seeds for each species were buried at depths ranging from 0 to 4 cm under greenhouse conditions. Germinated and empty or rotten seeds were counted after 8 weeks. In the emergence experiment, five replicates of four newly-germinated seeds per species were buried at the same depths under controlled conditions and emergence was recorded after 3 weeks. The effect of burial depth on percentage of germination and seedling emergence was dependent on seed size. Although all species showed a decrease in germination with burial depth, this decrease was greater for small-than large-seeded species. Percentage of emergence was positively related to seed mass but negatively related to burial depth. Seed mortality was higher for small-than large-seeded species, but there was no general effect of burial depth on this variable. Thus, the current practice of spreading 30 cm deep layers of topsoil in post-construction restoration projects is unadvisable. In this restoration scenario, thinner layers of topsoil should be used to achieve the maximum potential of the topsoil for germination and seedling establishment.

Variation in the effects of burial in different peatland successional stages on seed survival of four wetland species

NASA Astrophysics Data System (ADS)

Egawa, Chika

2017-01-01

The availability of viable seeds in soil helps to determine the success of ecological restoration in disturbed habitats. Although seed survival in soil generally increases with an increase in burial depth, whether the effects of burial on seed survival are comparable across different sites is unclear. In this study, I tested the hypothesis that the positive effects of burial on seed survival decrease as vegetation develops through succession. Four wetland species, Drosera rotundifolia, Lobelia sessilifolia, Rhynchospora alba and Moliniopsis japonica, were used for the study. The four species differ in their light requirement for germination; i.e., D. rotundifolia, L. sessilifolia and R. alba germinate best in light, whereas M. japonica germinates equally well in light and darkness. The seeds of these species were buried for two years at three depths (litter, 0 and 4 cm) in three successional stages with different amounts of vegetation and litter in a post-mined peatland. The photosynthetically active radiation (PAR) and temperature at each of litter layer, 0 cm and 4 cm depths were measured for each successional stage. The between-depth differences in PAR and temperature fluctuations decreased as succession progressed. For the three light-demanding species, burial promoted seed survival more in the initial successional stage than in the later successional stages, whereas for M. japonica, burial promoted seed survival equally in all successional stages. This study revealed significant variation in the effects of burial on seed survival, particularly for light-sensitive seeds, and that the soil surface layers in vegetated sites can contain persistent seeds, which could be used as a seed source in restoration.

Antioxidant functionalized polymer capsules to prevent oxidative stress.

PubMed

Larrañaga, Aitor; Isa, Isma Liza Mohd; Patil, Vaibhav; Thamboo, Sagana; Lomora, Mihai; Fernández-Yague, Marc A; Sarasua, Jose-Ramon; Palivan, Cornelia G; Pandit, Abhay

2018-02-01

Polymeric capsules exhibit significant potential for therapeutic applications as microreactors, where the bio-chemical reactions of interest are efficiently performed in a spatial and time defined manner due to the encapsulation of an active biomolecule (e.g., enzyme) and control over the transfer of reagents and products through the capsular membrane. In this work, catalase loaded polymer capsules functionalized with an external layer of tannic acid (TA) are fabricated via a layer-by-layer approach using calcium carbonate as a sacrificial template. The capsules functionalised with TA exhibit a higher scavenging capacity for hydrogen peroxide and hydroxyl radicals, suggesting that the external layer of TA shows intrinsic antioxidant properties, and represents a valid strategy to increase the overall antioxidant potential of the developed capsules. Additionally, the hydrogen peroxide scavenging capacity of the capsules is enhanced in the presence of the encapsulated catalase. The capsules prevent oxidative stress in an in vitro inflammation model of degenerative disc disease. Moreover, the expression of matrix metalloproteinase-3 (MMP-3), and disintegrin and metalloproteinase with thrombospondin motif-5 (ADAMTS-5), which represents the major proteolytic enzymes in intervertebral disc, are attenuated in the presence of the polymer capsules. This platform technology exhibits potential to reduce oxidative stress, a key modulator in the pathology of a broad range of inflammatory diseases. Oxidative stress damages important cell structures leading to cellular apoptosis and senescence, for numerous disease pathologies including cancer, neurodegeneration or osteoarthritis. Thus, the development of biomaterials-based systems to control oxidative stress has gained an increasing interest. Herein, polymer capsules loaded with catalase and functionalized with an external layer of tannic acid are fabricated, which can efficiently scavenge important reactive oxygen species (i.e., hydroxyl radicals and hydrogen peroxide) and modulate extracellular matrix activity in an in vitro inflammation model of nucleus pulposus. The present work represents accordingly, an important advance in the development and application of polymer capsules with antioxidant properties for the treatment of oxidative stress, which is applicable for multiple inflammatory disease targets. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

(K, Na, Li)(Nb, Ta)O3:Mn lead-free single crystal with high piezoelectric properties

PubMed Central

Huo, Xiaoqing; Zhang, Rui; Zheng, Limei; Zhang, Shujun; Wang, Rui; Wang, Junjun; Sang, Shijing; Yang, Bin; Cao, Wenwu

2016-01-01

Lead-free single crystal, (K, Na, Li)(Nb, Ta)O3:Mn, was successfully grown using top-seeded solution growth method. Complete matrix of dielectric, piezoelectric and elastic constants for [001]C poled single crystal was determined. The piezoelectric coefficient d33 measured by the resonance method was 545 pC/N, which is almost three times that of its ceramic counterpart. The values measured by the Berlincourt meter ( d33∗=630pC/N) and strain-field curve ( d33∗∗=870pm/V) were even higher. The differences were assumed to relate with the different extrinsic contributions of domain wall vibration and domain wall translation during the measurements by different approaches, where the intrinsic contribution (on the order of 539 pm/V) was supposed to be the same. The crystal has ultrahigh electromechanical coupling factor (k33 ~ 95%) and high ultrasound velocity, which make it promising for high frequency medical transducer applications. PMID:27594704

Incidence of seed-borne fungi and aflatoxins in Sudanese lentil seeds.

PubMed

el-Nagerabi, S A; Elshafie, A E

2001-01-01

Thirteen seed samples of lentil (Lens esculenta) were incubated on agar plate and moist filter papers (Moist Chambers) at 28 +/- 2 degrees C for determination of the incidence of seed-borne fungi. Aflatoxins content of the seeds was measured using the bright greenish- yellow fluorescence test (BGYF) and thin-layer chromatography (TLC). Sixty-nine species and seven varieties, which belong to 24 genera of fungi, were isolated from this crop. Of these fungi, 51 species and two varieties are considered new for this crop, whereas seven genera and 13 species are new to the mycoflora of the Sudan. The genus Aspergillus (13 species and 6 varieties) which comprising 44% of the total colony count was the most prevalent genus followed by Rhizopus (2 species, 19%), Penicillium (6 species) and Fusarium (8 species) (12%), Chaetomium (3 species) and Cladosporium (5 species) (6%), where the 18 genera (1-4 species) showed very low level of incidence (19%). Of the possible pathogens of lentil plants, F. oxysporum the main cause of vascular wilt was recovered from seeds of this crop. Thin layer chromatographic analysis of chloroform extracts of 13 seed samples showed that only one samples was naturally contaminated with aflatoxins B1, B2, G1 and G2 (14.3 micrograms/kg).

Photophysical Study of Polymer-Based Solar Cells with an Organo-Boron Molecule in the Active Layer

PubMed Central

Romero-Servin, Sergio; de Anda Villa, Manuel; Carriles, R.; Ramos-Ortíz, Gabriel; Maldonado, José-Luis; Rodríguez, Mario; Güizado-Rodríguez, M.

2015-01-01

Our group previously reported the synthesis of four polythiophene derivatives (P1–P4) used for solar cells. The cells were prepared under room conditions by spin coating, leading to low efficiencies. However, after the addition of 6-nitro-3-(E)-3-(4-dimethylaminophenyl)allylidene)-2,3-dihydrobenzo[d]-[1,3,2] oxazaborole (M1) to their active layers, the efficiencies of the cells showed approximately a two-fold improvement. In this paper, we study this enhancement mechanism by performing ultrafast transient absorption (TA) experiments on the active layer of the different cells. Our samples consisted of thin films of a mixture of PC61BM with the polythiophenes derivatives P1–P4. We prepared two versions of each sample, one including the molecule M1 and another without it. The TA data suggests that the efficiency improvement after addition of M1 is due not only to an extended absorption spectrum towards the infrared region causing a larger population of excitons but also to the possible creation of additional channels for transport of excitons and/or electrons to the PC61BM interface. PMID:28793438

Textured substrate tape and devices thereof

DOEpatents

Goyal, Amit

2006-08-08

A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

Integration of a waveguide self-electrooptic effect device and a vertically coupled interconnect waveguide

DOEpatents

Vawter, G Allen [Corrales, NM

2008-02-26

A self-electrooptic effect device ("SEED") is integrated with waveguide interconnects through the use of vertical directional couplers. Light initially propagating in the interconnect waveguide is vertically coupled to the active waveguide layer of the SEED and, if the SEED is in the transparent state, the light is coupled back to the interconnect waveguide.

Plasmonic detection of possible defects in multilayer nanohole array consisting of essential materials in simplified STT-RAM cell

NASA Astrophysics Data System (ADS)

Sadri-Moshkenani, Parinaz; Khan, Mohammad Wahiduzzaman; Zhao, Qiancheng; Krivorotov, Ilya; Nilsson, Mikael; Bagherzadeh, Nader; Boyraz, Ozdal

2017-08-01

Plasmonic nanostructures are highly used for sensing purposes since they support plasmonic modes which make them highly sensitive to the refractive index change of their surrounding medium. Therefore, they can also be used to detect changes in optical properties of ultrathin layer films in a multilayer plasmonic structure. Here, we investigate the changes in optical properties of ultrathin films of macro structures consisting of STT-RAM layers. Among the highest sensitive plasmonic structures, nanohole array has attracted many research interest because of its ease of fabrication, small footprint, and simplified optical alignment. Hence it is more suitable for defect detection in STT-RAM geometries. Moreover, the periodic nanohole pattern in the nanohole array structure makes it possible to couple the light to the surface plasmon polariton (SPP) mode supported by the structure. To assess the radiation damages and defects in STT-RAM cells we have designed a multilayer nanohole array based on the layers used in STT-RAM structure, consisting 4nm- Ta/1.5nm-CoFeB/2nm-MgO/1.5nm-CoFeB/4nm-Ta layers, all on a 300nm silver layer on top of a PEC boundary. The nanoholes go through all the layers and become closed by the PEC boundary on one side. The dimensions of the designed nanoholes are 313nm depth, 350nm diameter, and 700nm period. Here, we consider the normal incidence of light and investigate zeroth-order reflection coefficient to observe the resonance. Our simulation results show that a 10% change in refractive index of the 2nm-thick MgO layer leads to about 122GHz shift in SPP resonance in reflection pattern.